AT374975B - Oszillator - Google Patents

Oszillator

Info

Publication number
AT374975B
AT374975B AT0358975A AT358975A AT374975B AT 374975 B AT374975 B AT 374975B AT 0358975 A AT0358975 A AT 0358975A AT 358975 A AT358975 A AT 358975A AT 374975 B AT374975 B AT 374975B
Authority
AT
Austria
Prior art keywords
oscillator
Prior art date
Application number
AT0358975A
Other languages
German (de)
English (en)
Other versions
ATA358975A (de
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of ATA358975A publication Critical patent/ATA358975A/de
Application granted granted Critical
Publication of AT374975B publication Critical patent/AT374975B/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/20—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator
    • H03B5/24—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator active element in amplifier being semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
AT0358975A 1974-05-10 1975-05-12 Oszillator AT374975B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5211974A JPS5718710B2 (US20030220297A1-20031127-C00009.png) 1974-05-10 1974-05-10

Publications (2)

Publication Number Publication Date
ATA358975A ATA358975A (de) 1983-10-15
AT374975B true AT374975B (de) 1984-06-25

Family

ID=12905973

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0358975A AT374975B (de) 1974-05-10 1975-05-12 Oszillator

Country Status (9)

Country Link
US (1) US3955154A (US20030220297A1-20031127-C00009.png)
JP (1) JPS5718710B2 (US20030220297A1-20031127-C00009.png)
AT (1) AT374975B (US20030220297A1-20031127-C00009.png)
CA (1) CA1029821A (US20030220297A1-20031127-C00009.png)
DE (1) DE2520825C2 (US20030220297A1-20031127-C00009.png)
ES (1) ES437556A1 (US20030220297A1-20031127-C00009.png)
FR (1) FR2270712B1 (US20030220297A1-20031127-C00009.png)
GB (1) GB1505376A (US20030220297A1-20031127-C00009.png)
NL (1) NL7505426A (US20030220297A1-20031127-C00009.png)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5718710B2 (US20030220297A1-20031127-C00009.png) * 1974-05-10 1982-04-17
US4150344A (en) * 1976-03-01 1979-04-17 Siemens Aktiengesellschaft Tunable microwave oscillator
DE2709314C3 (de) * 1977-03-03 1980-03-20 Texas Instruments Deutschland Gmbh, 8050 Freising HF-Verstärkerschaltung
US7141865B2 (en) * 2001-05-21 2006-11-28 James Rodger Leitch Low noise semiconductor amplifier
JP2008142832A (ja) * 2006-12-11 2008-06-26 Aisho:Kk パイプ切断機

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2822310A (en) * 1955-04-21 1958-02-04 Philips Corp Semi-conductor device
DE1564218A1 (de) * 1965-12-22 1970-01-08 Ibm Verfahren zur Herstellung von Transistoren
US3500141A (en) * 1964-10-13 1970-03-10 Ibm Transistor structure
DE2045618A1 (de) * 1969-09-15 1971-03-25 Rca Corp Integrierte Halbleiterschaltung
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
GB1298375A (en) * 1969-10-17 1972-11-29 Hitachi Ltd Method of making field effect transistors
DE2242026A1 (de) * 1971-08-26 1973-03-15 Sony Corp Mis-feldeffekttransistor
DE2320563A1 (de) * 1972-04-20 1973-10-25 Sony Corp Vierschichttriode
BE809216A (fr) * 1972-12-29 1974-04-16 Sony Corp Dispositif semi-conducteur
BE809217A (fr) * 1972-12-29 1974-04-16 Sony Corp Dispositif semi-conducteur
DE2418560A1 (de) * 1973-04-18 1974-11-14 Sony Corp Halbleitervorrichtung
DE2520825A1 (de) * 1974-05-10 1975-11-20 Sony Corp Oszillator
FR2130399B1 (US20030220297A1-20031127-C00009.png) * 1971-03-20 1977-09-02 Philips Nv

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3822409A (en) * 1971-06-01 1974-07-02 Matsushita Electric Works Ltd Photosensitive solid oscillator

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2822310A (en) * 1955-04-21 1958-02-04 Philips Corp Semi-conductor device
US3500141A (en) * 1964-10-13 1970-03-10 Ibm Transistor structure
DE1564218A1 (de) * 1965-12-22 1970-01-08 Ibm Verfahren zur Herstellung von Transistoren
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
DE2045618A1 (de) * 1969-09-15 1971-03-25 Rca Corp Integrierte Halbleiterschaltung
GB1298375A (en) * 1969-10-17 1972-11-29 Hitachi Ltd Method of making field effect transistors
FR2130399B1 (US20030220297A1-20031127-C00009.png) * 1971-03-20 1977-09-02 Philips Nv
DE2242026A1 (de) * 1971-08-26 1973-03-15 Sony Corp Mis-feldeffekttransistor
DE2320563A1 (de) * 1972-04-20 1973-10-25 Sony Corp Vierschichttriode
BE809216A (fr) * 1972-12-29 1974-04-16 Sony Corp Dispositif semi-conducteur
BE809217A (fr) * 1972-12-29 1974-04-16 Sony Corp Dispositif semi-conducteur
DE2364753A1 (de) * 1972-12-29 1974-07-18 Sony Corp Halbleitervorrichtung
DE2364752A1 (de) * 1972-12-29 1974-08-01 Sony Corp Halbleitervorrichtung
DE2418560A1 (de) * 1973-04-18 1974-11-14 Sony Corp Halbleitervorrichtung
DE2520825A1 (de) * 1974-05-10 1975-11-20 Sony Corp Oszillator

Also Published As

Publication number Publication date
CA1029821A (en) 1978-04-18
GB1505376A (en) 1978-03-30
FR2270712B1 (US20030220297A1-20031127-C00009.png) 1980-10-17
ES437556A1 (es) 1977-01-16
JPS50145087A (US20030220297A1-20031127-C00009.png) 1975-11-21
ATA358975A (de) 1983-10-15
FR2270712A1 (US20030220297A1-20031127-C00009.png) 1975-12-05
NL7505426A (nl) 1975-11-12
DE2520825A1 (de) 1975-11-20
US3955154A (en) 1976-05-04
DE2520825C2 (de) 1982-07-08
AU8065275A (en) 1976-11-04
JPS5718710B2 (US20030220297A1-20031127-C00009.png) 1982-04-17

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee
ELJ Ceased due to non-payment of the annual fee