AT343719B - Halbleiteranordnung mit einem schalter, der ein hallelement und eine differentialschalteinheit enthalt - Google Patents

Halbleiteranordnung mit einem schalter, der ein hallelement und eine differentialschalteinheit enthalt

Info

Publication number
AT343719B
AT343719B AT566474A AT566474A AT343719B AT 343719 B AT343719 B AT 343719B AT 566474 A AT566474 A AT 566474A AT 566474 A AT566474 A AT 566474A AT 343719 B AT343719 B AT 343719B
Authority
AT
Austria
Prior art keywords
semi
hall element
conductor arrangement
switch
switch unit
Prior art date
Application number
AT566474A
Other languages
English (en)
Other versions
ATA566474A (de
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of ATA566474A publication Critical patent/ATA566474A/de
Application granted granted Critical
Publication of AT343719B publication Critical patent/AT343719B/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/90—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of galvano-magnetic devices, e.g. Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
AT566474A 1973-07-09 1974-07-09 Halbleiteranordnung mit einem schalter, der ein hallelement und eine differentialschalteinheit enthalt AT343719B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7325035A FR2237373B1 (de) 1973-07-09 1973-07-09

Publications (2)

Publication Number Publication Date
ATA566474A ATA566474A (de) 1977-10-15
AT343719B true AT343719B (de) 1978-06-12

Family

ID=9122247

Family Applications (1)

Application Number Title Priority Date Filing Date
AT566474A AT343719B (de) 1973-07-09 1974-07-09 Halbleiteranordnung mit einem schalter, der ein hallelement und eine differentialschalteinheit enthalt

Country Status (11)

Country Link
US (1) US4011469A (de)
JP (1) JPS5310265B2 (de)
AT (1) AT343719B (de)
BE (1) BE817387A (de)
CA (1) CA1008972A (de)
CH (1) CH578289A5 (de)
DE (1) DE2431943C3 (de)
FR (1) FR2237373B1 (de)
GB (1) GB1477848A (de)
IT (1) IT1015729B (de)
NL (1) NL7409109A (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51148662U (de) * 1975-05-22 1976-11-29
JPS5257272U (de) * 1975-10-22 1977-04-25
CA1088159A (en) * 1977-01-03 1980-10-21 Wilson D. Pace Hall-effect integrated circuit switch
EP0001160B1 (de) * 1977-09-08 1981-04-29 THE GENERAL ELECTRIC COMPANY, p.l.c. Planare PNPN Halbleitervorrichtung mit kreisförmiger Geometrie und deren Verwendung in einer Magnetfeldsonde
US4253107A (en) * 1978-10-06 1981-02-24 Sprague Electric Company Integrated circuit with ion implanted hall-cell
CH651152A5 (de) * 1979-11-27 1985-08-30 Landis & Gyr Ag Messwandler zum messen eines insbesondere von einem messstrom erzeugten magnetfeldes.
JPS59147429A (ja) * 1983-02-12 1984-08-23 Nippon Telegr & Teleph Corp <Ntt> 気相成長装置
US5017804A (en) * 1987-07-23 1991-05-21 Siliconix Incorporated Hall sensing of bond wire current
RU2072590C1 (ru) * 1994-01-14 1997-01-27 Акционерное общество закрытого типа "VL" Магнитоуправляемая логическая ячейка
JPH08201490A (ja) * 1995-01-31 1996-08-09 Mitsumi Electric Co Ltd センサic
ATE520957T1 (de) * 2005-01-18 2011-09-15 Teleflex Inc Pedalanordnung
CN108508383B (zh) * 2018-03-28 2024-08-09 中国科学院西安光学精密机械研究所 具有阈值调整功能的霍尔片、霍尔传感器及阈值调整方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449517A (en) * 1967-03-29 1969-06-10 Halliburton Co Hall effect keyer
US3596114A (en) * 1969-11-25 1971-07-27 Honeywell Inc Hall effect contactless switch with prebiased schmitt trigger

Also Published As

Publication number Publication date
GB1477848A (en) 1977-06-29
CH578289A5 (de) 1976-07-30
JPS5050882A (de) 1975-05-07
BE817387A (nl) 1975-01-08
FR2237373A1 (de) 1975-02-07
JPS5310265B2 (de) 1978-04-12
US4011469A (en) 1977-03-08
IT1015729B (it) 1977-05-20
CA1008972A (en) 1977-04-19
NL7409109A (nl) 1975-01-13
ATA566474A (de) 1977-10-15
AU7098774A (en) 1976-01-08
DE2431943A1 (de) 1975-01-30
DE2431943B2 (de) 1978-12-07
FR2237373B1 (de) 1976-04-30
DE2431943C3 (de) 1979-08-02

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee