AT334662B - Hochintegrierter halbleiterspeicher - Google Patents
Hochintegrierter halbleiterspeicherInfo
- Publication number
- AT334662B AT334662B AT514373A AT514373A AT334662B AT 334662 B AT334662 B AT 334662B AT 514373 A AT514373 A AT 514373A AT 514373 A AT514373 A AT 514373A AT 334662 B AT334662 B AT 334662B
- Authority
- AT
- Austria
- Prior art keywords
- highly integrated
- conductor memory
- integrated semi
- semi
- conductor
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26773072A | 1972-06-29 | 1972-06-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AT334662B true AT334662B (de) | 1976-01-25 |
| ATA514373A ATA514373A (de) | 1976-05-15 |
Family
ID=23019919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT514373A AT334662B (de) | 1972-06-29 | 1973-06-12 | Hochintegrierter halbleiterspeicher |
Country Status (11)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0188059A1 (en) * | 1984-10-23 | 1986-07-23 | Fujitsu Limited | Semiconductor memory device having read-modify-write configuration |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2360887C3 (de) * | 1973-12-06 | 1978-07-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Komplementär-Speicherelement und Verfahren zum Betrieb desselben |
| US4125854A (en) * | 1976-12-02 | 1978-11-14 | Mostek Corporation | Symmetrical cell layout for static RAM |
| JPS5818717B2 (ja) * | 1977-12-16 | 1983-04-14 | 幸田 学 | 埋込みパタ−ンを回帰させ得るリカレント・リ−ド・ライト・メモリ− |
| US4845674A (en) * | 1984-01-11 | 1989-07-04 | Honeywell, Inc. | Semiconductor memory cell including cross-coupled bipolar transistors and Schottky diodes |
| JPS61117794A (ja) * | 1984-11-13 | 1986-06-05 | Fujitsu Ltd | 不揮発性半導体記憶装置 |
| US4858182A (en) * | 1986-12-19 | 1989-08-15 | Texas Instruments Incorporated | High speed zero power reset circuit for CMOS memory cells |
| US4841485A (en) * | 1987-11-05 | 1989-06-20 | International Business Machines Corporation | Read/write memory device with an embedded read-only pattern and method for providing same |
| US5159571A (en) * | 1987-12-29 | 1992-10-27 | Hitachi, Ltd. | Semiconductor memory with a circuit for testing characteristics of flip-flops including selectively applied power supply voltages |
| US5325325A (en) * | 1990-03-30 | 1994-06-28 | Sharp Kabushiki Kaisha | Semiconductor memory device capable of initializing storage data |
| JPH0745077A (ja) * | 1993-08-02 | 1995-02-14 | Nec Corp | 記憶装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3530443A (en) * | 1968-11-27 | 1970-09-22 | Fairchild Camera Instr Co | Mos gated resistor memory cell |
| BE755189A (fr) * | 1969-08-25 | 1971-02-24 | Shell Int Research | Agencement de memoire a courant continu |
| US3618052A (en) * | 1969-12-05 | 1971-11-02 | Cogar Corp | Bistable memory with predetermined turn-on state |
| US3662351A (en) * | 1970-03-30 | 1972-05-09 | Ibm | Alterable-latent image monolithic memory |
-
1972
- 1972-06-29 US US00267730A patent/US3757313A/en not_active Expired - Lifetime
-
1973
- 1973-04-05 IT IT22599/73A patent/IT982700B/it active
- 1973-05-07 GB GB2162573A patent/GB1390330A/en not_active Expired
- 1973-05-10 CA CA171,185A patent/CA997470A/en not_active Expired
- 1973-05-11 AU AU55596/73A patent/AU470787B2/en not_active Expired
- 1973-05-18 JP JP48054849A patent/JPS4945647A/ja active Pending
- 1973-05-18 CH CH711073A patent/CH549257A/xx not_active IP Right Cessation
- 1973-05-25 FR FR7320856*A patent/FR2191194B1/fr not_active Expired
- 1973-05-25 SE SE7307376A patent/SE398569B/xx unknown
- 1973-05-25 NL NL7307301A patent/NL7307301A/xx unknown
- 1973-06-12 AT AT514373A patent/AT334662B/de not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0188059A1 (en) * | 1984-10-23 | 1986-07-23 | Fujitsu Limited | Semiconductor memory device having read-modify-write configuration |
| US4740922A (en) * | 1984-10-23 | 1988-04-26 | Fujitsu Limited | Semiconductor memory device having a read-modify-write configuration |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4945647A (US06312121-20011106-C00033.png) | 1974-05-01 |
| DE2329307B2 (de) | 1976-01-29 |
| IT982700B (it) | 1974-10-21 |
| FR2191194B1 (US06312121-20011106-C00033.png) | 1976-05-28 |
| AU470787B2 (en) | 1976-03-25 |
| ATA514373A (de) | 1976-05-15 |
| CA997470A (en) | 1976-09-21 |
| GB1390330A (en) | 1975-04-09 |
| DE2329307A1 (de) | 1974-01-17 |
| AU5559673A (en) | 1974-11-14 |
| NL7307301A (US06312121-20011106-C00033.png) | 1974-01-02 |
| CH549257A (de) | 1974-05-15 |
| FR2191194A1 (US06312121-20011106-C00033.png) | 1974-02-01 |
| SE398569B (sv) | 1977-12-27 |
| US3757313A (en) | 1973-09-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SE386541B (sv) | Monolitisk integrerad halvledarkrets | |
| IT981860B (it) | Dispositivo semiconduttore | |
| IT996680B (it) | Dispositivo semiconduttore | |
| NL180892C (nl) | Halfgeleidergeheugen. | |
| CH539914A (de) | Halbleiterspeicher | |
| DK140036C (da) | Halvlederelement | |
| AT334662B (de) | Hochintegrierter halbleiterspeicher | |
| NL178368C (nl) | Halfgeleidergeheugen. | |
| IT996919B (it) | Dispositivo semiconduttore | |
| IT986562B (it) | Dispositivo semiconduttore | |
| CH535473A (de) | Integrierter Festwertspeicher | |
| DK138248C (da) | Halvlederelement | |
| IT948582B (it) | Dispositivo di memoria | |
| NL176405C (nl) | Geintegreerde halfgeleidergeheugeninrichting. | |
| IT977703B (it) | Dispositivo semiconduttore | |
| NL171753C (nl) | Geintegreerd halfgeleidergeheugen. | |
| IT984672B (it) | Dispositivo di memoria a semiconduttori | |
| IT982699B (it) | Memoria a semiconduttori perfezionata | |
| IT990812B (it) | Dispositivo semiconduttore | |
| IT987932B (it) | Dispositivo semiconduttore integrato | |
| CH541869A (de) | Halbleiterbauelement | |
| NL184814C (nl) | Geintegreerde halfgeleiderschakeling. | |
| IT980938B (it) | Dispositivo semiconduttore | |
| IT947380B (it) | Memoria a semiconduttori | |
| SE386011B (sv) | Styrbart halvledarliktiktarelement |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |