AT319403B - Verfahren zur Bildung der Kontakte von mittels Planar- oder Mesa-Technologie auf Halbleiterplättchen hergestellten Diodenelementen - Google Patents

Verfahren zur Bildung der Kontakte von mittels Planar- oder Mesa-Technologie auf Halbleiterplättchen hergestellten Diodenelementen

Info

Publication number
AT319403B
AT319403B AT790272A AT790272A AT319403B AT 319403 B AT319403 B AT 319403B AT 790272 A AT790272 A AT 790272A AT 790272 A AT790272 A AT 790272A AT 319403 B AT319403 B AT 319403B
Authority
AT
Austria
Prior art keywords
planar
contacts
forming
semiconductor wafers
diode elements
Prior art date
Application number
AT790272A
Other languages
German (de)
English (en)
Original Assignee
Egyesuelt Izzolampa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Egyesuelt Izzolampa filed Critical Egyesuelt Izzolampa
Application granted granted Critical
Publication of AT319403B publication Critical patent/AT319403B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
AT790272A 1971-09-17 1972-09-14 Verfahren zur Bildung der Kontakte von mittels Planar- oder Mesa-Technologie auf Halbleiterplättchen hergestellten Diodenelementen AT319403B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
HUEE001953 HU163255B (ja) 1971-09-17 1971-09-17

Publications (1)

Publication Number Publication Date
AT319403B true AT319403B (de) 1974-12-27

Family

ID=10995388

Family Applications (1)

Application Number Title Priority Date Filing Date
AT790272A AT319403B (de) 1971-09-17 1972-09-14 Verfahren zur Bildung der Kontakte von mittels Planar- oder Mesa-Technologie auf Halbleiterplättchen hergestellten Diodenelementen

Country Status (3)

Country Link
AT (1) AT319403B (ja)
DE (1) DE2245788B2 (ja)
HU (1) HU163255B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3318683C1 (de) * 1983-05-21 1984-12-13 Telefunken electronic GmbH, 7100 Heilbronn Legierter Kontakt für n-leitendes GaAlAs-Halbleitermaterial

Also Published As

Publication number Publication date
DE2245788A1 (de) 1973-03-29
DE2245788B2 (de) 1976-04-08
HU163255B (ja) 1973-07-28

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee