AT279549B - Verfahren zur Herstellung von Kristallen - Google Patents

Verfahren zur Herstellung von Kristallen

Info

Publication number
AT279549B
AT279549B AT185066A AT185066A AT279549B AT 279549 B AT279549 B AT 279549B AT 185066 A AT185066 A AT 185066A AT 185066 A AT185066 A AT 185066A AT 279549 B AT279549 B AT 279549B
Authority
AT
Austria
Prior art keywords
making crystals
crystals
making
Prior art date
Application number
AT185066A
Other languages
German (de)
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT279549B publication Critical patent/AT279549B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44—Gallium phosphide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT185066A 1965-03-03 1966-02-28 Verfahren zur Herstellung von Kristallen AT279549B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6502654A NL6502654A (forum.php) 1965-03-03 1965-03-03

Publications (1)

Publication Number Publication Date
AT279549B true AT279549B (de) 1970-03-10

Family

ID=19792545

Family Applications (1)

Application Number Title Priority Date Filing Date
AT185066A AT279549B (de) 1965-03-03 1966-02-28 Verfahren zur Herstellung von Kristallen

Country Status (7)

Country Link
US (1) US3591346A (forum.php)
AT (1) AT279549B (forum.php)
BE (1) BE677272A (forum.php)
CH (1) CH470201A (forum.php)
DE (1) DE1519845C3 (forum.php)
GB (1) GB1153181A (forum.php)
NL (1) NL6502654A (forum.php)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030964A (en) * 1976-04-29 1977-06-21 The United States Of America As Represented By The United States Energy Research And Development Administration Temperature cycling vapor deposition HgI2 crystal growth
US4946543A (en) * 1986-06-02 1990-08-07 Kalisher Murray H Method and apparatus for growing films on a substrate
GB2216639B (en) * 1988-03-04 1991-08-07 Secretary Trade Ind Brit Furnace
CN114452671A (zh) * 2022-02-28 2022-05-10 中国科学院长春应用化学研究所 一种温度调整系统及提纯设备

Also Published As

Publication number Publication date
US3591346A (en) 1971-07-06
GB1153181A (en) 1969-05-29
CH470201A (de) 1969-03-31
NL6502654A (forum.php) 1966-09-05
BE677272A (forum.php) 1966-09-02
DE1519845A1 (de) 1969-03-20
DE1519845C3 (de) 1975-02-13
DE1519845B2 (de) 1974-06-12

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee