AT259010B - Volumeneffekt-Oszillator - Google Patents
Volumeneffekt-OszillatorInfo
- Publication number
- AT259010B AT259010B AT492266A AT492266A AT259010B AT 259010 B AT259010 B AT 259010B AT 492266 A AT492266 A AT 492266A AT 492266 A AT492266 A AT 492266A AT 259010 B AT259010 B AT 259010B
- Authority
- AT
- Austria
- Prior art keywords
- volume effect
- effect oscillator
- oscillator
- volume
- effect
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
- H10N80/107—Gunn diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET0028781 | 1965-06-12 | ||
| DET0029198 | 1965-08-12 | ||
| DET0029847 | 1965-11-25 | ||
| DET0029940 | 1965-12-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT259010B true AT259010B (de) | 1967-12-27 |
Family
ID=27437641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT492266A AT259010B (de) | 1965-06-12 | 1966-05-24 | Volumeneffekt-Oszillator |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3796969A (de) |
| AT (1) | AT259010B (de) |
| DE (2) | DE1466514B2 (de) |
| GB (1) | GB1108372A (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3846714A (en) * | 1966-02-02 | 1974-11-05 | Ibm | Microwave oscillator |
| DE1591653B1 (de) * | 1967-04-01 | 1971-05-13 | Telefunken Patent | Impulsbetriebener halbleiter oszillator |
| US3596204A (en) * | 1969-07-02 | 1971-07-27 | Varian Associates | Tunable coaxial cavity semiconductor negative resistance oscillator |
| DE2450727C1 (de) * | 1974-10-25 | 1979-11-29 | Siemens Ag | Anordnung zur Informationsuebertragung |
| US4009446A (en) * | 1976-03-19 | 1977-02-22 | Varian Associates | Dual diode microwave amplifier |
| DE10136032A1 (de) * | 2001-07-25 | 2003-02-20 | Forschungsverbund Berlin Ev | Gunn-Effekt-Halbleiterbauelement wie ein Hetero-Bipolar-Transistor (HBT) zur frequenzvariablen Schwingungserzeugung |
| JP5565823B2 (ja) * | 2008-10-07 | 2014-08-06 | 独立行政法人情報通信研究機構 | パルス信号発生装置 |
| CN105572607B (zh) * | 2016-01-07 | 2019-02-01 | 中国科学院地质与地球物理研究所 | 电子磁强计及磁场测量方法 |
-
1965
- 1965-06-12 DE DE19651466514 patent/DE1466514B2/de active Pending
- 1965-11-25 DE DE1466543A patent/DE1466543C3/de not_active Expired
-
1966
- 1966-05-24 AT AT492266A patent/AT259010B/de active
- 1966-06-02 US US00554822A patent/US3796969A/en not_active Expired - Lifetime
- 1966-06-09 GB GB25786/66A patent/GB1108372A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1466543B2 (de) | 1971-04-29 |
| GB1108372A (en) | 1968-04-03 |
| DE1466543A1 (de) | 1969-07-17 |
| US3796969A (en) | 1974-03-12 |
| DE1466543C3 (de) | 1976-01-02 |
| DE1466514B2 (de) | 1970-12-10 |
| DE1466514A1 (de) | 1969-05-29 |
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