WO2021187104A1 - Procédé de traitement de substrat et dispositif de traitement de substrat - Google Patents

Procédé de traitement de substrat et dispositif de traitement de substrat Download PDF

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Publication number
WO2021187104A1
WO2021187104A1 PCT/JP2021/008152 JP2021008152W WO2021187104A1 WO 2021187104 A1 WO2021187104 A1 WO 2021187104A1 JP 2021008152 W JP2021008152 W JP 2021008152W WO 2021187104 A1 WO2021187104 A1 WO 2021187104A1
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Prior art keywords
gas
substrate
substrate processing
supplying
processing method
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PCT/JP2021/008152
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English (en)
Japanese (ja)
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博紀 村上
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東京エレクトロン株式会社
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Publication of WO2021187104A1 publication Critical patent/WO2021187104A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Definitions

  • This disclosure relates to a substrate processing method and a substrate processing apparatus.
  • a substrate processing device for embedding a film in a substrate having irregularities is known.
  • Patent Document 1 describes a treatment method comprising sequentially exposing the surface of a substrate to a silicon halide precursor and then to a nitrogen-containing reactant at a temperature of about 600 ° C. or higher in order to form a silicon nitride film. It is disclosed.
  • the present disclosure provides a substrate processing method and a substrate processing apparatus for forming a silicon nitride film.
  • the step of supplying the silicon-containing gas to the temperature-controlled substrate and the step of supplying the nitrogen-containing gas to the substrate are repeated to form a silicon nitride film.
  • a substrate processing method for forming wherein the temperature of the substrate is adjusted to 600 ° C. or lower, the silicon-containing gas contains halogen, and the nitrogen-containing gas is different from the first gas and the first gas.
  • a substrate processing method is provided, which is a mixed gas containing at least a second gas.
  • the schematic diagram which shows the structural example of the substrate processing apparatus.
  • FIG. 1 is a schematic view showing a configuration example of the substrate processing apparatus 100.
  • the substrate processing apparatus 100 is a film forming apparatus for forming a SiN film (silicon nitride film) on the substrate W.
  • the substrate processing device 100 has a cylindrical processing container 1 with a ceiling whose lower end is opened.
  • the entire processing container 1 is made of, for example, quartz.
  • a ceiling plate 2 made of quartz is provided near the upper end of the processing container 1, and a region below the ceiling plate 2 is sealed.
  • a metal manifold 3 formed in a cylindrical shape is connected to the opening at the lower end of the processing container 1 via a sealing member 4 such as an O-ring.
  • the manifold 3 supports the lower end of the processing container 1, and is a wafer on which a large number (for example, 25 to 150) semiconductor wafers (hereinafter referred to as “board W”) are placed in multiple stages as substrates from below the manifold 3.
  • the boat 5 is inserted into the processing container 1. In this way, a large number of substrates W are housed in the processing container 1 substantially horizontally with an interval along the vertical direction.
  • the wafer boat 5 is made of, for example, quartz.
  • the wafer boat 5 has three rods 6 (two rods are shown in FIG. 1), and a large number of substrates W are supported by grooves (not shown) formed in the rods 6.
  • the wafer boat 5 is placed on the table 8 via a heat insulating cylinder 7 made of quartz.
  • the table 8 is supported on a rotating shaft 10 penetrating a metal (stainless steel) lid 9 that opens and closes the opening at the lower end of the manifold 3.
  • a magnetic fluid seal 11 is provided at the penetrating portion of the rotating shaft 10, and the rotating shaft 10 is hermetically sealed and rotatably supported.
  • a sealing member 12 for maintaining the airtightness in the processing container 1 is provided between the peripheral portion of the lid 9 and the lower end of the manifold 3.
  • the rotating shaft 10 is attached to the tip of an arm 13 supported by an elevating mechanism (not shown) such as a boat elevator, and the wafer boat 5 and the lid 9 are integrally elevated and lowered into the processing container 1. On the other hand, it is inserted and removed.
  • the table 8 may be fixedly provided on the lid 9 side so that the substrate W can be processed without rotating the wafer boat 5.
  • the substrate processing apparatus 100 has a gas supply unit 20 that supplies a predetermined gas such as a processing gas or a purge gas into the processing container 1.
  • a gas supply unit 20 that supplies a predetermined gas such as a processing gas or a purge gas into the processing container 1.
  • the gas supply unit 20 has gas supply pipes 21, 22, and 24.
  • the gas supply pipes 21 and 22 are made of, for example, quartz, penetrate the side wall of the manifold 3 inward, bend upward, and extend vertically.
  • a plurality of gas holes 21g and 22g are formed at predetermined intervals in the vertical portions of the gas supply pipes 21 and 22 over a length in the vertical direction corresponding to the wafer support range of the wafer boat 5.
  • the gas holes 21g and 22g discharge gas in the horizontal direction.
  • the gas supply pipe 24 is made of, for example, quartz, and is composed of a short quartz pipe provided so as to penetrate the side wall of the manifold 3.
  • the gas supply pipe 21 is provided with a vertical portion (vertical portion in which the gas hole 21 g is formed) in the processing container 1.
  • the raw material gas (precursor gas) is supplied to the gas supply pipe 21 from the gas supply source 21a via the gas pipe.
  • the gas pipe is provided with a flow rate controller 21b and an on-off valve 21c. As a result, the raw material gas from the gas supply source 21a is supplied into the processing container 1 via the gas pipe and the gas supply pipe 21.
  • the gas supply source 21a supplies a raw material gas containing Si.
  • a silicon-containing gas containing halogen such as DCS (dichlorosilane, Si 2 H 2 Cl 2 ) and HCDS (hexachlorodisilane, Si 2 Cl 6) can be used.
  • a halogen-free silicon-containing gas such as monosilane, disilane, higher-order silane, aminosilanes and silylamines can also be used.
  • the gas supply pipe 22 is provided with a vertical portion (vertical portion in which the gas hole 22 g is formed) in the processing container 1.
  • the reducing gas (first gas) is supplied to the gas supply pipe 22 from the gas supply source 22a via the gas pipe.
  • the gas pipe is provided with a flow rate controller 22b and an on-off valve 22c.
  • the gas supply pipe 22 is supplied with the added gas (second gas) from the gas supply source 23a via the gas pipe.
  • the gas pipe is provided with a flow rate controller 23b and an on-off valve 23c.
  • the gas supply source 22a supplies the reducing gas.
  • a gas composed of a nitrogen atom, a hydrogen atom, or a compound of a nitrogen atom and a hydrogen atom can be used.
  • a gas containing nitrogen such as NH 3 can be used.
  • the reducing gas may be N 2 gas or H 2 gas.
  • deuterated compounds such as D 2 and ND 3 can be used as the reducing gas.
  • the gas supply source 23a supplies an additive gas to be added to the reducing gas.
  • an additive gas for example, a hydrazine-containing gas such as MMH (monomethylhydrazine, CH 3 (NH) NH 2 ) NH 3 can be used.
  • Purge gas is supplied to the gas supply pipe 24 from a purge gas supply source (not shown) via a gas pipe.
  • the gas pipe (not shown) is provided with a flow rate controller (not shown) and an on-off valve (not shown).
  • the purge gas from the purge gas supply source is supplied into the processing container 1 via the gas pipe and the gas supply pipe 24.
  • an inert gas such as argon (Ar) or nitrogen (N 2) can be used.
  • the purge gas is supplied from the purge gas supply source to the processing container 1 via the gas pipe and the gas supply pipe 24 has been described, but the present invention is not limited to this, and the purge gas is supplied from any of the gas supply pipes 21 and 22. May be done.
  • An exhaust port 40 for vacuum exhausting the inside of the processing container 1 is provided on the side wall portion of the processing container 1 facing the position where the gas supply pipes 21 and 22 are arranged.
  • the exhaust port 40 is vertically elongated so as to correspond to the wafer boat 5.
  • An exhaust port cover member 41 having a U-shaped cross section is attached to a portion of the processing container 1 corresponding to the exhaust port 40 so as to cover the exhaust port 40.
  • the exhaust port cover member 41 extends upward along the side wall of the processing container 1.
  • An exhaust pipe 42 for exhausting the processing container 1 via the exhaust port 40 is connected to the lower part of the exhaust port cover member 41.
  • An exhaust device 44 including a pressure control valve 43 for controlling the pressure in the processing container 1 and a vacuum pump is connected to the exhaust pipe 42, and the inside of the processing container 1 is exhausted by the exhaust device 44 via the exhaust pipe 42. Will be done.
  • a cylindrical heating mechanism 50 for heating the processing container 1 and the substrate W inside the processing container 1 is provided so as to surround the outer circumference of the processing container 1.
  • the substrate processing device 100 has a control unit 60.
  • the control unit 60 controls the operation of each part of the substrate processing device 100, for example, supply / stop of each gas by opening / closing the on-off valves 21c to 23c, controlling the gas flow rate by the flow rate controllers 21b to 23b, and exhausting by the exhaust device 44. Take control. Further, the control unit 60 controls the temperature of the substrate W by, for example, the heating mechanism 50.
  • the control unit 60 may be, for example, a computer or the like. Further, the computer program that operates each part of the substrate processing apparatus 100 is stored in the storage medium.
  • the storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.
  • FIG. 2 is an example of a time chart showing the first film formation process of the SiN film by the substrate processing apparatus 100.
  • the film forming process shown in FIG. 2 includes a step S101 for supplying a raw material gas, a step S102 for purging, a step S103 for supplying a reducing gas and an added gas, and a step S103 for supplying the substrate W whose temperature has been adjusted to a predetermined temperature.
  • This is a process of forming a SiN film on the surface of the substrate W by repeating an ALD (Atomic Layer Deposition) process in which the purging step S104 is one cycle for a predetermined cycle. Note that FIG. 2 shows only one cycle.
  • N 2 gas is a purge gas from the gas supply pipe 24 is constantly during the film formation process (continuously) is supplied.
  • the step S101 for supplying the raw material gas is a step of supplying DCS gas or HCDS gas (shown as Si in FIG. 2) as the raw material gas containing Si into the processing container 1.
  • the raw material gas is supplied from the gas supply source 21a through the gas supply pipe 21 into the processing container 1 by opening the on-off valve 21c.
  • the purging step S102 is a step of purging excess raw material gas and the like in the processing container 1.
  • the on-off valve 21c is closed to stop the supply of the raw material gas.
  • the purge gas constantly supplied from the gas supply pipe 24 purges the surplus raw material gas and the like in the processing container 1.
  • Supplying a reducing gas and additive gas S103 is a step of supplying a MMH gas as the NH 3 gas and the additive gas as the reducing gas.
  • the on-off valves 22c and 23c are opened to supply the reducing gas and the added gas from the gas supply sources 22a and 23a into the processing container 1 via the gas supply pipe 22.
  • the purging step S104 is a step of purging excess reducing gas, added gas, etc. in the processing container 1.
  • the on-off valves 22c and 23c are closed to stop the supply of the reducing gas and the added gas.
  • the purge gas constantly supplied from the gas supply pipe 24 purges the excess reducing gas, added gas, and the like in the processing container 1.
  • Substrate temperature 500 ° C or higher and 600 ° C or lower Pressure: 0.1-9 Torr
  • Raw material gas flow rate 500-5000 sccm
  • Reduction gas flow rate 1000-10000 sccm
  • Addition gas flow rate 10-1000 sccm
  • FIG. 3 is an example of a time chart showing the second film formation process of the SiN film by the substrate processing apparatus 100.
  • the film forming process shown in FIG. 3 includes a step S301 for supplying the raw material gas, a step S302 for purging, a step S303 for supplying the reducing gas and the added gas, and a step S303 for supplying the substrate W whose temperature has been adjusted to a predetermined temperature.
  • This is a process of forming a SiN film on the surface of the substrate W by repeating the ALD process in which the purging step S304 is one cycle for a predetermined cycle. Note that FIG. 3 shows only one cycle.
  • N 2 gas is a purge gas from the gas supply pipe 24 is constantly during the film formation process (continuously) is supplied.
  • the second film forming process shown in FIG. 3 is different from the first film forming process shown in FIG. 2 in the step S303 for supplying the reducing gas and the added gas.
  • the step S303 for supplying the reducing gas and the added gas is a step of supplying the N 2 gas or the H 2 gas as the reducing gas and the MMH gas as the added gas. That is, in the step S303 for supplying the reducing gas and the added gas, the gas supply source 22a for supplying the reducing gas to the processing container 1 supplies N 2 gas or H 2 gas instead of NH 3 gas.
  • Other configurations are the same as those of the first film forming process, and redundant description will be omitted.
  • FIG. 4 is an example of a time chart showing a third film formation process of the SiN film by the substrate processing apparatus 100.
  • the film forming process shown in FIG. 4 includes a step S501 for supplying a raw material gas, a step S502 for purging, a step S503 for supplying a reducing gas, a reducing gas and an added gas for the substrate W whose temperature has been adjusted to a predetermined temperature.
  • This is a process of forming a SiN film on the surface of the substrate W by repeating a predetermined cycle of the ALD process in which the step S504 for supplying the gas and the step S505 for purging are one cycle. Note that FIG. 4 shows only one cycle.
  • N 2 gas is a purge gas from the gas supply pipe 24 is constantly during the film formation process (continuously) is supplied.
  • the third film forming process is different from the first film forming process in the step S503 for supplying the reducing gas and the step S504 for supplying the reducing gas and the added gas.
  • the supply of the reducing gas is started first in the step S503, and then the supply of the added gas is started while supplying the reducing gas in the step S504.
  • Other configurations are the same as those of the first film forming process, and redundant description will be omitted.
  • Substrate temperature 500 ° C or higher and 600 ° C or lower Pressure: 0.1-9 Torr
  • Raw material gas flow rate 500-5000 sccm
  • Reduction gas flow rate 1000-10000 sccm
  • Addition gas flow rate 10-1000 sccm
  • FIG. 5 is an example of a graph showing the relationship between the process temperature and the film formation rate.
  • the horizontal axis shows the process temperature, and the vertical axis shows the film formation rate (GPC; Growth Per Cycle).
  • the film forming result by the first film forming process (see FIG. 2) using DCS gas as a raw material gas, NH 3 gas as a reducing gas, and MMH gas as an additive gas is shown by a white circle.
  • DCS gas as a source gas using the NH 3 gas as the reducing gas shows the deposition results of Reference Example deposition process without addition of additive gas with black circles.
  • Graph 400 shows the relationship between the process temperature and the film forming rate in the film forming process of the reference example in which MMH gas is not added.
  • the first deposition process showing the relationship between the process temperature and the deposition rate when the MMH gas was added 10% flow ratio to the total flow rate of the NH 3 gas and MMH gas in the graph 410.
  • the first deposition process showing the relationship between the process temperature and the deposition rate in the case of adding MMH gas 2% flow ratio to the total flow rate of the NH 3 gas and MMH gas in the graph 420.
  • a graph 400 as shown by comparing the graphs 410 and 420, in a temperature range of the process temperature is 500 ° C. or higher 600 ° C. or less, the reducing gas (NH 3 gas), adding a MMH gas as additive gas Therefore, the film formation rate of the SiN film can be improved.
  • the SiN film is preferably formed in the temperature range of 600 ° C. or higher.
  • the SiN film is formed in a temperature region (500 ° C. or higher and 600 ° C. or lower) lower than the film forming temperature (600 ° C. or higher) of the film forming process of the reference example. be able to.
  • the flow rate ratios of the MMH gas to the total flow rates of the NH 3 gas and the MMH gas were 0.5%, 1% and 2% (measurement results at 550 ° C. in the graph 420), 10% ( The film formation result by the first film formation process (see FIG. 2) is also shown in FIG. 5 as 20% of the measurement result at 550 ° C. in Graph 410).
  • the film forming speed is compared with the film forming process of the reference example. Can be improved. Further, according to the first film forming process, the film forming rate can be improved as the flow rate ratio of the added MMH gas is increased.
  • step S103 is 0.3 Torr (measurement result at 550 ° C. in Graph 420), 3.6 Torr (2%, 3.6 T). , 7.0 Torr (2%, 7T), and the film forming result by the first film forming process (see FIG. 2) is also shown in FIG.
  • the film forming rate can be improved as the pressure in the step S103 for supplying the reducing gas and the added gas is increased.
  • the film forming result by the first film forming process (see FIG. 2) using HCDS gas as a raw material gas, NH 3 gas as a reducing gas, and MMH gas as an additive gas is shown by a white diamond. Further, it HCDS gas as a material gas, using NH 3 gas as the reducing gas, shows the deposition results of Reference Example deposition process without addition of additive gas with black diamonds.
  • Graph 500 shows the relationship between the process temperature and the film formation rate in the film formation process of the reference example in which MMH gas is not added. Further, the relationship between the process temperature and the film forming speed in the first film forming process is shown in Graph 510.
  • MMH gas was added at a flow rate ratio of 10% at process temperatures of 350 ° C. and 450 ° C., and MMH gas was added at a flow rate ratio of 1% at a process temperature of 550 ° C.
  • a graph 500, as shown by comparing the graph 510, in the temperature range of the process temperature is 500 ° C. or higher 600 ° C. or less, by adding MMH gas in a reducing gas (NH 3 gas), HCDS gas as a source gas
  • a reducing gas NH 3 gas
  • HCDS gas as a source gas
  • the film forming result by the second film forming process (see FIG. 3) using DCS gas as the raw material gas, N 2 gas or H 2 gas as the reducing gas, and MMH gas as the additive gas is shown as a white triangle. It is indicated by a mark and a white square mark.
  • the point 601 represents a case of using N 2 gas and MMH gas for process temperature 550 ° C. as the reducing gas
  • the point 602 represents the case of using H 2 gas and MMH gas as the reducing gas for the process temperature 550 ° C..
  • a SiN film can be formed on the substrate W in a temperature range where the process temperature is 500 ° C. or higher and 600 ° C. or lower.
  • FIG. 6 is an example of a graph showing the relationship between the number of ALD cycles and the film thickness.
  • the horizontal axis shows the number of ALD cycles, and the vertical axis shows the film thickness.
  • process temperature 630 ° C., DCS gas as a source gas using the NH 3 gas as the reducing gas shows the deposition results of Reference Example deposition process without addition of additive gas with black circles.
  • the wire 700 fitted to the result of the film forming process of the reference example is shown.
  • the film formation results of the above film formation process are indicated by white circles.
  • the line 710 fitted to the result of the first film forming process to which 10% was added is shown.
  • the process temperature 550 ° C., DCS gas as a source gas, NH 3 gas as the reducing gas, a MMH gas as additive gas, the first addition of MMH gas 2% flow ratio to the total flow rate of the NH 3 gas and MMH gas is shown by a white square mark.
  • the line 720 fitted to the result of the first film forming process in which 2% was added is shown.
  • the incubation cycle was 11 times.
  • the incubation cycle was 0 times.
  • the incubation cycle can be reduced as compared with the film forming process of the reference example.
  • the film thickness controllability at the time of thin film formation and the uniformity of the film thickness can be improved.
  • the present disclosure is not limited to the above-described embodiment and the like, and various modifications and modifications are made within the scope of the gist of the present disclosure described in the claims. It can be improved.
  • Substrate processing device 1 Processing container 2
  • Ceiling plate 20 Gas supply unit 21, 22, 24 Gas supply pipes 21a to 23a Gas supply source 44
  • Exhaust device 50 Heating mechanism 60 Control unit

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Abstract

L'invention concerne un procédé de traitement de substrat et un dispositif de traitement de substrat pour former un film de nitrure de silicium.　Ce procédé de traitement de substrat forme un film de nitrure de silicium en répétant une étape consistant à introduire un gaz contenant du silicium dans un substrat à température régulée et une étape consistant à introduire un gaz contenant de l'azote dans le substrat. La température du substrat est régulée à 600 °C ou moins, le gaz contenant du silicium contient un halogène, et le gaz contenant de l'azote est un gaz mixte contenant au moins un premier gaz et un second gaz différent du premier gaz.
PCT/JP2021/008152 2020-03-17 2021-03-03 Procédé de traitement de substrat et dispositif de traitement de substrat WO2021187104A1 (fr)

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JP2017174919A (ja) * 2016-03-23 2017-09-28 東京エレクトロン株式会社 窒化膜の形成方法
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JP2019204942A (ja) * 2018-02-20 2019-11-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ マイクロ波プラズマを使用して窒化ケイ素膜を形成する方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007281082A (ja) * 2006-04-04 2007-10-25 Tokyo Electron Ltd 成膜方法及び成膜装置並びに記憶媒体
JP2018525841A (ja) * 2015-08-21 2018-09-06 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高温の熱ａｌｄ及び窒化ケイ素膜
JP2017174919A (ja) * 2016-03-23 2017-09-28 東京エレクトロン株式会社 窒化膜の形成方法
JP2018198288A (ja) * 2017-05-24 2018-12-13 東京エレクトロン株式会社 シリコン窒化膜の成膜方法および成膜装置
JP2019204942A (ja) * 2018-02-20 2019-11-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ マイクロ波プラズマを使用して窒化ケイ素膜を形成する方法

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