WO2021088453A1

WO2021088453A1 - Dielectric state analysis method and system, computer and storage medium

Info

Publication number: WO2021088453A1
Application number: PCT/CN2020/109652
Authority: WO
Inventors: 高岩峰; 卢毅; 张旭; 王馨; 范硕超; 王书渊; 薛文祥; 王辉; 陈原; 张吉飞; 苏斌
Original assignee: 国网冀北电力有限公司电力科学研究院; 华北电力科学研究院有限责任公司; 国家电网有限公司; 国网冀北电力有限公司
Priority date: 2019-11-07
Filing date: 2020-08-17
Publication date: 2021-05-14
Also published as: CN111103511A; CN111103511B

Abstract

Disclosed are a dielectric state analysis method and system, a computer and a storage medium. The method comprises: iteratively calculating a simulated imaginary part integral according to a real part interpolation step size until the simulated imaginary part integral is less than a preset resolution, and comparing the simulated imaginary part integral with an actual imaginary part integral to obtain conductance information and polarization process real part information; iteratively calculating a simulated real part integral according to an imaginary part interpolation step size until the simulated real part integral is less than the preset resolution, and comparing the simulated real part integral with an actual real part integral to obtain capacitance information and polarization process imaginary part information; and finally obtaining a dielectric state according to the conductance information, the polarization process real part information, the capacitance information and the polarization process imaginary part information. In this way, a dielectric state can be accurately analyzed and determined, incorrect identification, omitted identification and erroneous identification are avoided, and the operation and maintenance costs of a power device are saved.

Description

Method, system, computer and storage medium for analyzing state of dielectric

Technical field

The present invention relates to the field of dielectrics, and in particular to a method, system, computer and storage medium for analyzing the state of dielectrics.

Background technique

In the production, transmission and application of electric energy, all electrical equipment requires the support of dielectric materials, such as the turn-to-turn insulation system of generators, the insulation system of transformers, the insulation system of cables, the insulation system of insulators, etc. . How to characterize and study the insulation state of various dielectric materials is an important research topic in the operation and maintenance of power equipment.

In the existing research and practical engineering applications, the decoupling analysis of the measurement results of the dielectric response of the dielectric/power equipment has not been achieved, so the conductance process, the polarization process and the infinite frequency capacitance process of the dielectric/power equipment cannot be obtained. This leads to the inability to accurately determine the status of the dielectric/power equipment, which brings a lot of inconvenience to the power equipment status diagnosis of the power system, and it is easy to cause misjudgments, missed judgments and misjudgments.

Summary of the invention

The main purpose of the embodiments of the present invention is to provide a dielectric state analysis method, system, computer, and storage medium to accurately analyze and determine the dielectric state, avoid misjudgment, missed judgment, and misjudgment, and save the cost of power equipment operation and maintenance.

In order to achieve the foregoing objective, an embodiment of the present invention provides a dielectric state analysis method, including:

Acquire real data and imaginary data of dielectric response parameters corresponding to multiple frequencies;

Determine the lowest epitaxial frequency of the real part and the lowest epitaxial frequency of the imaginary part according to the lowest frequency, and determine the highest epitaxial frequency of the real part and the highest epitaxial frequency of the imaginary part according to the highest frequency;

Fit the real part data corresponding to multiple frequencies to obtain the real part dielectric response fitting function in a limited frequency band; fit the imaginary part data corresponding to multiple frequencies to obtain the imaginary part dielectric response fitting function in the limited frequency band; The limited frequency band is located between the lowest frequency and the highest frequency;

According to the real part data corresponding to the lowest frequency and the real part data corresponding to the second lowest frequency, the real part dielectric response fitting function in the low epitaxial band of the real part is obtained, and according to the real part data corresponding to the highest frequency and the real part corresponding to the second highest frequency The data obtains the real part dielectric response fitting function in the real high epitaxial frequency band; according to the imaginary part data corresponding to the lowest frequency and the imaginary part data corresponding to the second lowest frequency, the imaginary part dielectric response fitting in the imaginary low epitaxial frequency band is obtained Function, according to the imaginary part data corresponding to the highest frequency and the imaginary part data corresponding to the second highest frequency to obtain the imaginary part dielectric response fitting function in the imaginary part high epitaxial frequency band; the real part low epitaxial frequency band is located at the lowest frequency and the real part lowest epitaxial frequency The real high epitaxial frequency band is between the highest frequency and the highest real epitaxial frequency, the imaginary low epitaxial frequency band is between the lowest frequency and the lowest epitaxial frequency of the imaginary part, and the imaginary high epitaxial frequency band is between the highest frequency and the highest epitaxial frequency of the imaginary part. Between frequencies

Perform the following iterative processing:

Calculate the upper bound of the real singular point and the lower bound of the real singular point according to the singular point and the real part interpolation step length; among them, the singular point is located between the highest frequency and the lowest frequency;

According to the upper bound of the singular point of the real part, the lower bound of the singular point of the real part, the singular point, the lowest epitaxial frequency of the real part, the highest epitaxial frequency of the real part, the real part dielectric response fitting function in the limited frequency band, and the real part in the low epitaxial frequency band of the real part. Partial dielectric response fitting function and real part dielectric response fitting function in the high epitaxial band of the real part calculate and simulate the imaginary part integral;

Determine whether the simulated imaginary part integral is less than the preset resolution; when it is smaller than the preset resolution, compare the simulated imaginary part integral with the actual imaginary part integral to obtain the conductance information and the real part information of the polarization process, otherwise update the real part interpolation step long;

Perform the following iterative processing:

Calculate the upper bound and lower bound of the imaginary part singular point according to the singular point and the imaginary part interpolation step;

According to the upper bound of the imaginary part singular point, the lower bound of the imaginary part, the singular point, the lowest epitaxial frequency of the imaginary part, the highest epitaxial frequency of the imaginary part, the imaginary part dielectric response fitting function in the limited frequency band, and the imaginary part in the low epitaxial frequency band of the imaginary part. Partial dielectric response fitting function and the imaginary part dielectric response fitting function in the imaginary high epitaxial frequency band calculate and simulate the real part integral;

Determine whether the simulated real part integral is less than the preset resolution; when it is smaller than the preset resolution, compare the simulated real part integral with the actual real part integral to obtain the capacitance information and the imaginary part information of the polarization process, otherwise update the imaginary part interpolation step long;

According to the conductance information, the real part information of the polarization process, the capacitance information and the imaginary part information of the polarization process, the dielectric state is obtained.

The embodiment of the present invention also provides a dielectric state analysis system, including:

An acquiring unit for acquiring real part data and imaginary part data of dielectric response parameters corresponding to multiple frequencies;

The determining unit is used to determine the lowest epitaxial frequency of the real part and the lowest epitaxial frequency of the imaginary part according to the lowest frequency, and determine the highest epitaxial frequency of the real part and the highest epitaxial frequency of the imaginary part according to the highest frequency;

The finite frequency band fitting function unit is used to fit the real part data corresponding to multiple frequencies to obtain the real part dielectric response fitting function in the finite frequency band; fit the imaginary part data corresponding to multiple frequencies to obtain the imaginary part data in the finite frequency band. The imaginary part dielectric response fitting function; among them, the limited frequency band is located between the lowest frequency and the highest frequency;

The epitaxial frequency band fitting function unit is used to obtain the real part dielectric response fitting function in the real low epitaxial frequency band according to the real part data corresponding to the lowest frequency and the real part data corresponding to the second lowest frequency, and according to the real part corresponding to the highest frequency Data and the real part data corresponding to the second highest frequency obtain the real part dielectric response fitting function in the real part high epitaxial frequency band; obtain the imaginary part low epitaxial frequency band according to the imaginary part data corresponding to the lowest frequency and the imaginary part data corresponding to the second lowest frequency The imaginary part dielectric response fitting function in the inner part, according to the imaginary part data corresponding to the highest frequency and the imaginary part data corresponding to the second highest frequency, the imaginary part dielectric response fitting function in the imaginary part high epitaxial frequency band is obtained; the real part low epitaxial frequency band Located between the lowest frequency and the lowest epitaxial frequency of the real part, the high epitaxial frequency band of the real part is between the highest frequency and the highest epitaxial frequency of the real part, the low epitaxial frequency band of the imaginary part is between the lowest frequency and the lowest epitaxial frequency of the imaginary part, and the imaginary part is high epitaxial frequency The frequency band is located between the highest frequency and the highest epitaxial frequency of the imaginary part;

The real part iterative unit is used to perform the following iterative processing:

The imaginary part iterative unit is used to perform the following iterative processing:

The dielectric state unit is used to obtain the dielectric state according to the conductance information, the real part information of the polarization process, the capacitance information, and the imaginary part information of the polarization process.

The embodiment of the present invention also provides a computer device, including a memory, a processor, and a computer program stored in the memory and capable of running on the processor, and the processor implements the steps of the dielectric state analysis method when the computer program is executed.

The embodiment of the present invention also provides a computer-readable storage medium on which a computer program is stored, and when the computer program is executed by a processor, the steps of the dielectric state analysis method are implemented.

The dielectric state analysis method, system, computer, and storage medium of the embodiments of the present invention iteratively calculate the simulated imaginary part integral according to the real part interpolation step, until the simulated imaginary part integral is less than the preset resolution, and the simulated imaginary part integral is compared with the actual imaginary part The integral is compared to obtain the conductance information and the real part information of the polarization process; according to the imaginary part interpolation step, iteratively calculate the simulated real part integral until the simulated real part integral is less than the preset resolution, and the simulated real part integral is compared with the actual real part integral Comparing to obtain the capacitance information and the imaginary part information of the polarization process, and finally obtain the dielectric state according to the conductance information, the real part information of the polarization process, the capacitance information and the imaginary part information of the polarization process, which can accurately analyze and judge the dielectric state and avoid misjudgment. , Missed judgments and wrong judgments, saving the cost of operation and maintenance of power equipment.

Description of the drawings

In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following will briefly introduce the accompanying drawings needed in the description of the embodiments. Obviously, the accompanying drawings in the following description are only of the present invention. For some embodiments, those of ordinary skill in the art can obtain other drawings based on these drawings without creative work.

FIG. 1 is a flowchart of a method for analyzing the state of a dielectric in an embodiment of the present invention;

2 is a flowchart of calculating real part singular point frequency band integral in an embodiment of the present invention;

Figure 3 is a flowchart of calculating imaginary singular point frequency band integrals in an embodiment of the present invention;

4 is a schematic diagram of real data in an embodiment of the present invention;

5 is a schematic diagram of imaginary data in the first embodiment of the present invention;

6 is a schematic diagram of imaginary data in the second embodiment of the present invention;

FIG. 7 is a schematic diagram of comparison of polarizability in an embodiment of the present invention;

Fig. 8 is a schematic diagram of comparison of polarizability in an embodiment of the present invention;

9 is a schematic diagram of the simulated real part integral and the simulated imaginary part integral of a complex capacitor in an embodiment of the present invention;

10 is a schematic diagram of the real part information and the imaginary part information of the polarization process of a complex capacitor in an embodiment of the present invention;

FIG. 11 is a schematic diagram of conductance information and infinite frequency capacitance information of a complex capacitor in an embodiment of the present invention;

12 is a schematic diagram of dielectric response parameters of a high-temperature vulcanized silicone rubber compound capacitor in an embodiment of the present invention;

13 is a schematic diagram of polarization process information of a high-temperature vulcanized silicone rubber compound capacitor in an embodiment of the present invention;

FIG. 14 is a schematic diagram of conductance information and infinite frequency capacitance information of a high-temperature vulcanized silicone rubber compound capacitor in an embodiment of the present invention;

15 is a schematic diagram showing the comparison of the real part data of the polarizability of the high-temperature vulcanized silicone rubber compound capacitor in the embodiment of the present invention;

16 is a schematic diagram of comparison of the imaginary part data of the polarizability of the high-temperature vulcanized silicone rubber compound capacitance in the embodiment of the present invention;

Fig. 17 is a structural block diagram of a dielectric state analysis system in an embodiment of the present invention.

Detailed ways

The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

Those skilled in the art know that the embodiments of the present invention can be implemented as a system, device, device, method, or computer program product. Therefore, the present disclosure may be specifically implemented in the following forms, namely: complete hardware, complete software (including firmware, resident software, microcode, etc.), or a combination of hardware and software.

In view of the fact that the prior art cannot accurately determine the status of the dielectric/power equipment, which brings a lot of inconvenience to the power equipment status diagnosis of the power system, and is likely to cause misjudgment, missed judgment and misjudgment, the embodiment of the present invention provides a dielectric state analysis method, Accurate analysis and judgment of the dielectric state can avoid misjudgment, missed judgment and misjudgment, and save the cost of operation and maintenance of power equipment. The present invention will be described in detail below with reference to the accompanying drawings.

FIG. 1 is a flowchart of a method for analyzing the state of a dielectric in an embodiment of the present invention. As shown in Figure 1, the dielectric state analysis method includes:

S101: Acquire real part data and imaginary part data of dielectric response parameters corresponding to multiple frequencies.

Among them, the dielectric response parameter can be complex capacitance, dielectric constant or polarizability.

S102: Determine the lowest epitaxial frequency of the real part and the lowest epitaxial frequency of the imaginary part according to the lowest frequency, and determine the highest epitaxial frequency of the real part and the highest epitaxial frequency of the imaginary part according to the highest frequency.

S103: Fit the real part data corresponding to multiple frequencies to obtain the real part dielectric response fitting function in a limited frequency band; fit the imaginary part data corresponding to multiple frequencies to obtain the imaginary part dielectric response fitting in the limited frequency band function. Among them, the limited frequency band is located between the lowest frequency and the highest frequency.

S104: According to the real part data corresponding to the lowest frequency and the real part data corresponding to the second lowest frequency, obtain the real part dielectric response fitting function in the real part low epitaxial frequency band, and according to the real part data corresponding to the highest frequency and the second highest frequency corresponding The real part data obtains the real part dielectric response fitting function in the real part high epitaxial frequency band; the imaginary part dielectric response in the imaginary part low epitaxial frequency band is obtained according to the imaginary part data corresponding to the lowest frequency and the imaginary part data corresponding to the second lowest frequency Fitting function, according to the imaginary part data corresponding to the highest frequency and the imaginary part data corresponding to the second highest frequency to obtain the imaginary part dielectric response fitting function in the imaginary high epitaxial frequency band; the real part low epitaxial frequency band is located at the lowest frequency and the real part lowest Among the epitaxial frequencies, the real high epitaxial frequency band is located between the highest frequency and the real highest epitaxial frequency, the imaginary low epitaxial frequency band is between the lowest frequency and the lowest epitaxial frequency of the imaginary part, and the imaginary high epitaxial frequency band is located between the highest frequency and the imaginary part. Between the highest epitaxial frequencies;

Perform the following iterative processing:

S105: Calculate the upper bound of the real singular point and the lower bound of the real singular point according to the singular point and the real part interpolation step length; where the singular point is located between the highest frequency and the lowest frequency.

S106: According to the upper bound of the singular point of the real part, the lower bound of the singular point of the real part, the singular point, the lowest epitaxial frequency of the real part, the highest epitaxial frequency of the real part, the real part dielectric response fitting function in the limited frequency band, and the real part low epitaxial frequency band The real part dielectric response fitting function and the real part dielectric response fitting function in the high epitaxial frequency band of the real part are calculated to simulate the imaginary part integral.

S107: Determine whether the analog imaginary part integral is less than the preset resolution.

S108: When the resolution is less than the preset resolution, compare the simulated imaginary part integral with the actual imaginary part integral to obtain conductance information and real part information of the polarization process.

In specific implementation, the same part of the simulated imaginary part integral and the actual imaginary part integral can be used as the real part information of the polarization process, and the different part of the simulated imaginary part integral and the actual imaginary part integral can be used as the conductance information.

S109: When the resolution is greater than or equal to the preset resolution, update the real part interpolation step.

In one embodiment, the real interpolation step size is updated by the following formula:

Among them, ln(Δω _n ) is the real part interpolation step in the nth iteration, and ln(Δω _n+1 ) is the real part interpolation step in the n+1th iteration.

Perform the following iterative processing:

S110: Calculate the upper bound of the imaginary part singular point and the lower bound of the imaginary part singular point according to the singular point and the interpolation step length of the imaginary part.

S111: According to the upper bound of the imaginary part singular point, the lower bound of the imaginary part singular point, the singular point, the lowest epitaxial frequency of the imaginary part, the highest epitaxial frequency of the imaginary part, the imaginary part dielectric response fitting function in the limited frequency band, and the imaginary part low epitaxial frequency band The imaginary part dielectric response fitting function and the imaginary part dielectric response fitting function in the imaginary high epitaxial frequency band are calculated to simulate the real part integral.

S112: Determine whether the analog real part integral is less than the preset resolution.

S113: When the resolution is less than the preset resolution, compare the simulated real part integral with the actual real part integral to obtain capacitance information and imaginary part information of the polarization process.

In specific implementation, the same part of the simulated real part integral and the actual real part integral can be used as the imaginary part information of the polarization process, and the different part of the simulated real part integral and the actual real part integral can be used as the capacitance information.

S114: When the resolution is greater than or equal to the preset resolution, update the imaginary part interpolation step.

In an embodiment, the imaginary part interpolation step size is updated by the following formula:

Among them, ln(Δω' _n ) is the imaginary part interpolation step in the nth iteration, and ln(Δω' _n+1 ) is the imaginary part interpolation step in the n+1th iteration.

S115: Obtain the dielectric state according to the conductance information, the real part information of the polarization process, the capacitance information, and the imaginary part information of the polarization process.

Among them, the capacitance information is infinite frequency capacitance information.

The execution subject of the dielectric state analysis method shown in FIG. 1 may be a computer. As can be seen from the process shown in Figure 1, the dielectric state analysis method of the embodiment of the present invention iteratively calculates the simulated imaginary part integral according to the real part interpolation step, until the simulated imaginary part integral is less than the preset resolution, and the simulated imaginary part integral is compared with the actual The imaginary part integral is compared to obtain the conductance information and the real part information of the polarization process; according to the imaginary part interpolation step, the simulated real part integral is iteratively calculated until the simulated real part integral is less than the preset resolution, and the simulated real part integral is compared with the actual real part. Part integrals are compared to obtain the capacitance information and the imaginary part information of the polarization process. Finally, according to the conductance information, the real part information of the polarization process, the capacitance information and the imaginary part information of the polarization process, the dielectric state can be obtained, which can accurately analyze and judge the dielectric state to avoid causing Misjudgment, omission and misjudgment saves the cost of operation and maintenance of power equipment.

In an embodiment, S106 includes:

Calculate the real part based on the real data corresponding to the upper bound of the real singular point and the upper bound of the real singular point, the singular point, the real data corresponding to the singular point, the lower bound of the real singular point, and the real data corresponding to the lower bound of the real singular point Singularity frequency band integration.

Calculate the real part truncated frequency domain integral based on the real part data corresponding to the lowest real part epitaxial frequency, the lowest real part epitaxial frequency, the real part data corresponding to the highest real part epitaxial frequency, the highest real part epitaxial frequency and the singular point.

In specific implementation, calculating the real part truncated frequency domain integral includes:

According to the real data corresponding to the highest epitaxial frequency of the real part, the highest epitaxial frequency of the real part and the singular point, the frequency domain integral of the real part truncated is calculated.

In an embodiment, the truncated frequency domain integral on the real part is calculated by the following formula:

Among them, F ₁ is the truncated frequency domain integral on the real part, χ'(ω _Ext-H ) is the real part data corresponding to the highest epitaxial frequency of the real part, ω _S is the singularity point, and ω _Ext-H is the highest epitaxial frequency of the real part.

According to the real data corresponding to the lowest epitaxial frequency of the real part, the lowest epitaxial frequency of the real part and the singular point, the lower truncated frequency domain integral of the real part is calculated.

In an embodiment, the frequency domain integral with the lower truncated real part is calculated by the following formula:

Among them, F ₂ is the lower truncated frequency domain integral _{of the real part, χ'(ω Ext-L} ) is the real part data corresponding to the lowest epitaxial frequency of the real part, and ω _Ext-L is the lowest epitaxial frequency of the real part.

The upper truncated frequency domain integral of the real part and the lower truncated frequency domain integral of the real part are added to obtain the real part truncated frequency domain integral.

According to the real part dielectric response fitting function in the limited frequency band, the real part dielectric response fitting function in the real part low epitaxial frequency band, the real part dielectric response fitting function in the real part high epitaxial frequency band, and the real part lowest epitaxy Frequency, real part maximum extension frequency, real part singular point upper bound and real part singular point lower bound, calculate the real part extension frequency band integral.

According to the real part singular point frequency band integration, real part truncated frequency domain integration and real part extension frequency band integration, the simulation imaginary part integration is calculated.

Fig. 2 is a flow chart of calculating real part singular point frequency band integral in an embodiment of the present invention. As shown in Figure 2, the calculation of the real part singular point frequency band integral includes:

S201: Determine according to the real data corresponding to the upper bound of the real singular point, the upper bound of the real singular point, the real data corresponding to the singular point, the real data corresponding to the singular point, the lower bound of the real singular point, and the real data corresponding to the lower bound of the real singular point The first singular point real part coefficient, the second singular point real part coefficient, the third singular point real part coefficient, and the fourth singular point real part coefficient.

In specific implementation, because the real part dielectric response fitting function in the real part low epitaxial frequency band and the real part dielectric response fitting function in the real part high epitaxial frequency band are linear functions, it can be based on the upper bound of the real part singular point , Real part data corresponding to the upper bound of the real part singular point, singular point and real part data corresponding to the singular point determine the first singular point real part coefficient and the second singular point real part coefficient; according to the real part singular point lower bound, real part singularity The real part data corresponding to the lower bound of the point, the singular point and the real part data corresponding to the singular point determine the third singular point real part coefficient and the fourth singular point real part coefficient.

S202: Calculate the upper band integral of the real singular point according to the real coefficient of the first singular point, the real coefficient of the second singular point, the singular point, the upper bound of the real singular point, and the lower bound of the real singular point.

In an embodiment, the frequency band integral on the singular point of the real part is calculated by the following formula:

Among them, E ₁ is the frequency band integral on the real singular point, a is the real coefficient of the first singular point, b is the real coefficient of the second singular point, ω _S is the singular point, ω _SH is the upper bound of the real singular point, ω _SL is the lower bound of the singular point of the real part.

S203: Calculate the lower band integral of the real singular point according to the real part coefficient of the third singular point, the real part coefficient of the fourth singular point, the singular point, the upper bound of the real singular point, and the lower bound of the real singular point.

In an embodiment, the real part singular point lower band integral is calculated by the following formula:

Among them, E ₂ is the frequency band integral of the real singular point, c is the real coefficient of the third singular point, and d is the real coefficient of the fourth singular point.

S204: Add the upper frequency band integral of the real part singular point and the lower frequency band integral of the real part singular point to obtain the real part singular point frequency band integral.

In an embodiment, S111 includes:

Calculate the imaginary part based on the imaginary part data corresponding to the upper bound of the imaginary part singular point, the imaginary part corresponding to the upper bound of the imaginary part singular point, the singular point, the imaginary part data corresponding to the singular point, the lower bound of the imaginary part singular point and the imaginary part data corresponding to the lower bound of the imaginary part singular point Singularity frequency band integration.

According to the imaginary part dielectric response fitting function in the limited frequency band, the imaginary part dielectric response fitting function in the imaginary part low extension frequency band, the imaginary part dielectric response fitting function in the imaginary part high extension frequency band, and the imaginary part minimum extension Frequency, imaginary part maximum extension frequency, imaginary part singular point upper bound and imaginary part singular point lower bound, calculate the imaginary part extension frequency band integral.

Calculate the analog real part integral based on the imaginary part singular point frequency band integral and the imaginary part extension frequency band integral.

Fig. 3 is a flowchart of calculating the imaginary part singular point frequency band integral in an embodiment of the present invention. As shown in Figure 3, calculating the imaginary part singular point frequency band integral includes:

S301: Determine according to the imaginary part data corresponding to the upper bound of the imaginary part singular point, the imaginary part corresponding to the upper bound of the imaginary part singular point, the singular point, the imaginary part data corresponding to the singular point, the lower bound of the imaginary part singular point, and the imaginary part data corresponding to the lower bound of the imaginary part singular point The first singular point imaginary part coefficient, the second singular point imaginary part coefficient, the third singular point imaginary part coefficient, and the fourth singular point imaginary part coefficient.

In specific implementation, because the imaginary part dielectric response fitting function in the imaginary part low epitaxial frequency band and the imaginary part dielectric response fitting function in the imaginary part high epitaxial frequency band are both linear functions, it can be based on the upper bound of the imaginary part singular point , The imaginary part data corresponding to the upper bound of the imaginary part singular point, the singular point and the imaginary part data corresponding to the singular point determine the first singular point imaginary part coefficient and the second singular point imaginary part coefficient; according to the lower bound of the imaginary part singular point, the imaginary part singularity The imaginary part data corresponding to the lower bound of the point, the singular point and the imaginary part data corresponding to the singular point determine the third singular point imaginary part coefficient and the fourth singular point imaginary part coefficient.

S302: Calculate the upper band integral of the imaginary part singular point according to the imaginary part coefficient of the first singular point, the imaginary part coefficient of the second singular point, the singular point, the upper bound of the imaginary part singular point, and the lower bound of the imaginary part singular point.

In an embodiment, the frequency band integral on the imaginary singular point is calculated by the following formula:

Wherein, E _'1 is the imaginary part of the integral bands singular point, a' is a first singular point of the imaginary part of the coefficient, b 'is the imaginary part of the second singular point coefficients, ω' _SH bounded singularity point on the imaginary part, ω _'SL Is the lower bound of the imaginary part of the singular point.

S303: Calculate the lower band integral of the imaginary part singular point according to the third singular point imaginary part coefficient, the fourth singular point imaginary part coefficient, the singular point, the upper bound of the imaginary part singular point and the lower bound of the imaginary part singular point.

In one embodiment, the lower band integral of the imaginary part singular point is calculated by the following formula:

Wherein, E _'2 is a lower frequency band integrating the imaginary part of a singular point, c' is the coefficient of the imaginary part of the third singular point, d 'is the imaginary part of a singular point of the fourth coefficient.

S304: Add the upper frequency band integral of the imaginary part singular point and the lower frequency band integral of the imaginary part singular point to obtain the frequency band integral of the imaginary part singular point.

Fig. 4 is a schematic diagram of real data in an embodiment of the present invention. Fig. 5 is a schematic diagram of imaginary part data in the first embodiment of the present invention. Fig. 6 is a schematic diagram of imaginary part data in the second embodiment of the present invention. The abscissas of Fig. 4 to Fig. 6 are the logarithm of frequency (log (frequency)), and the ordinates are the logarithm of complex capacitance/dielectric constant/polarizability (dielectric response parameter) (log(complex capacitance/ Dielectric constant/polarizability)). As shown in Figures 4 to 6, the specific embodiments of the present invention are as follows:

1. Obtain the real part data and imaginary part data of the dielectric response parameters corresponding to multiple frequencies. Determine the lowest epitaxial frequency of the real part and the lowest epitaxial frequency of the imaginary part according to the lowest frequency, and determine the highest epitaxial frequency of the real part and the highest epitaxial frequency of the imaginary part according to the highest frequency.

As shown in Figure 4, the actual measured dielectric response frequency band (limited frequency band) is [ω _L ,ω _H ]. ω _L is the lowest frequency, and ω _H is the highest frequency. Extend the data by 2 to 3 orders of magnitude, that is, extend the lowest frequency to the lowest epitaxial frequency ω _{Ext-L of the} real part, that is, ω _Ext-L = 10 ^-2 × ω _L or ω _Ext-L = 10 ^-3 × ω _L ; The highest frequency is extended to the highest extension frequency ω _{Ext-H of the} real part, that is, ω _Ext-H =10 ^-2 ×ω _H or ω _Ext-H =10 ^-3 ×ω _H.

As shown in Figure 5-6, the actual measured dielectric response frequency band (limited frequency band) is [ω _L ,ω _H ]. ω _L is the lowest frequency, and ω _H is the highest frequency. Extend the data by 2 to 3 orders of magnitude, that is, extend the lowest frequency to the lowest epitaxial frequency _{ω'Ext-L of the} imaginary part, that is, _ω'Ext-L = 10 ^-2 ×ω _L or _ω'Ext-L = 10 ^-3 ×ω _L ; Extend the highest frequency to the highest extension frequency _{ω'Ext-H of the} imaginary part, that is, _ω'Ext-H = 10 ^-2 × ω _H or _ω'Ext-H = 10 ^-3 × ω _H.

2. Fit the real part data corresponding to multiple frequencies to obtain the real part dielectric response fitting function in a limited frequency band; fit the imaginary part data corresponding to multiple frequencies to obtain the imaginary part dielectric response fitting in the limited frequency band function. Among them, the limited frequency band is located between the lowest frequency and the highest frequency. Both the real part dielectric response fitting function and the imaginary part dielectric response fitting function are quadratic functions.

3. As shown in Figure 4, the real part dielectric response fitting function in the low epitaxial band of the real part can be obtained according to the real part data corresponding to the lowest frequency and the real part data corresponding to the second-lowest frequency, and according to the real part corresponding to the highest frequency The real part data corresponding to the data and the second-highest frequency obtains the real part dielectric response fitting function in the real part high epitaxial frequency band.

Among them, the real part dielectric response fitting function in the real part low epitaxial frequency band and the real part dielectric response fitting function in the real part high epitaxial frequency band are both linear functions. The real low epitaxial frequency band [ω _Ext-L ,ω _L ] is located between the lowest frequency (ω _L ) and the lowest real epitaxial frequency (ω _Ext-L ), and the real high epitaxial frequency band [ω _H ,ω _Ext-H ] Located between the highest frequency (ω _H ) and the highest epitaxial frequency of the real part (ω _Ext-H ). In the frequency bands other than [ω _Ext-L ,ω _Ext-H ], the method of truncation is used for assignment. That is, in _{the frequency band lower than ω Ext-L} , the real part data are all assigned the value χ'(ω _Ext-L ), and in _{the frequency band higher than ω Ext-H} , the real part data are all assigned the value χ'(ω _Ext-H ).

Figure 5 is a schematic diagram of the imaginary part data when the characteristic frequency is not in the epitaxial frequency band (the imaginary part low epitaxial frequency band and the imaginary part high epitaxial frequency band), and Figure 6 is the characteristic frequency when the characteristic frequency is in the epitaxial frequency band (imaginary part low epitaxial frequency band and the imaginary part high epitaxial frequency band) Schematic diagram of the imaginary part of the data.

As shown in Figure 5 or Figure 6, the imaginary part dielectric response fitting function in the imaginary low epitaxial frequency band can be obtained according to the imaginary part data corresponding to the lowest frequency and the imaginary part data corresponding to the second lowest frequency. Part data and the imaginary part data corresponding to the second highest frequency obtain the imaginary part dielectric response fitting function in the imaginary part high epitaxial frequency band.

As shown in Figure 5-6, the imaginary dielectric response fitting function in the imaginary low epitaxial frequency band and the imaginary dielectric response fitting function in the imaginary high epitaxial frequency band are linear functions. The imaginary low-epitaxial frequency band [ω' _Ext-L ,ω _L ] is located between the lowest frequency (ω _L ) and the lowest imaginary-part epitaxial frequency (ω' _Ext-L ), and the imaginary high-epitaxial frequency band [ω _H ,ω' _{Ext -H} ] is located between the highest frequency (ω _H ) and the highest epitaxial frequency of the imaginary part (ω' _Ext-H ). In the frequency bands other than [ω' _Ext-L ,ω' _Ext-H ], the method of truncation is used for assignment. That is, in _{the frequency band lower than ω Ext-L} and in the frequency band higher than ω _Ext-H , the imaginary part data is assigned a value of 0.

4. Calculate the upper bound of the real singular point ω _SH and the lower bound of the real singular point ω _SL according to the singular point ω _S and the real part interpolation step length; among them, the singular point ω _S is located between the highest frequency ω _H and the lowest frequency ω _L.

In an embodiment, the relationship between the upper bound of the real part of the singular point and the singular point is as follows:

ln(ω _SH )=ln(ω _S )+ln(Δω);

The relationship between the lower bound of the real part of the singular point and the singular point is as follows:

ln(ω _SL )=ln(ω _S )-ln(Δω);

Among them, ln(Δω) is the real part interpolation step.

5. Determine the first singular point real part coefficient and the second singular point real part coefficient according to the upper bound of the real part singular point, the real part data corresponding to the upper bound of the real part singular point, the singular point and the real part data corresponding to the singular point; The real part singular point lower bound, the real part data corresponding to the real part singular point lower bound, the singular point and the real part data corresponding to the singular point determine the third singular point real coefficient and the fourth singular point real coefficient.

6. Calculate the upper band integral of the real singular point according to the real part coefficient of the first singular point, the real part coefficient of the second singular point, the singular point, the upper bound of the real singular point and the lower bound of the real singular point. Among them, the frequency band integral on the singular point of the real part is the integral of the frequency band [ω _S ,ω _SH ] on the singular point of the real part.

7. Calculate the lower band integral of the real singular point according to the real part coefficient of the third singular point, the real part coefficient of the fourth singular point, the singular point, the upper bound of the real singular point and the lower bound of the real singular point. Among them, the real part singular point lower frequency band integral is the real part singular point lower frequency band [ω _SL ,ω _S ] integral.

8. Add the upper frequency band integral of the real part singular point and the lower frequency band integral of the real part singular point to obtain the real part singular point frequency band integral.

9. Calculate the truncated frequency domain integral of the real part according to the real data corresponding to the highest extension frequency of the real part, the highest extension frequency of the real part and the singular point; according to the real part data corresponding to the lowest extension frequency of the real part, the lowest extension frequency and singularity of the real part Point to calculate the truncated frequency domain integral under the real part. The upper truncated frequency domain integral of the real part and the lower truncated frequency domain integral of the real part are added to obtain the real part truncated frequency domain integral.

Among them, the upper truncated frequency domain integral of the real part is the integral of the upper truncated frequency domain (0,ω _Ext-L ); the lower truncated frequency domain integral of the real part is the integral of the lower truncated frequency domain of the real part (ω _Ext-H ,∞).

10. According to the real part dielectric response fitting function in the limited frequency band, the real part dielectric response fitting function in the real part low epitaxial frequency band, the real part dielectric response fitting function in the real part high epitaxial frequency band, the real part The lowest extension frequency, the highest extension frequency of the real part, the upper bound of the singular point of the real part and the lower bound of the singular point of the real part, calculate the real part of the extension frequency band integral.

In the specific implementation, because _{the real part dielectric response fitting function in the limited frequency band [ω L} ,ω _H ] and the real part dielectric response fitting in the real low epitaxial frequency band [ω _Ext-L ,ω _L ] have been determined Function and real part of the high-extension frequency band [ω _H , ω _Ext-H ] in the real part of the dielectric response fitting function, so the integral of the _{real part of the epitaxial frequency band [ω Ext-L} , ω _{SL) can be calculated according to the Simpson formula.}

11. Calculate the analog imaginary part integral based on the real part singular point frequency band integral, the real part truncated frequency domain integral and the real part epitaxial frequency band integral.

Add the real part singular point frequency band integral, the real part truncated frequency domain integral and the real part epitaxial frequency band integral to get the analog imaginary part integral.

12. Judge whether the integral of the simulated imaginary part is less than the preset resolution. When the resolution is greater than or equal to the preset resolution, update the real part interpolation step and return to step 4; when the resolution is less than the preset resolution, the same part of the simulated imaginary part integral and the actual imaginary part integral will be regarded as the real part of the polarization process. Part information, the difference between the simulated imaginary part integral and the actual imaginary part integral is used as the conductance information.

13 The singular points ω _S and imaginary interpolation step calculating the imaginary part of the boundary singular point ω _'SH and imaginary singular points lower bound ω' _SL.

In an embodiment, the relationship between the upper bound of the imaginary part of the singular point and the singular point is as follows:

ln(ω' _SH )=ln(ω _S )+ln(Δω');

The relationship between the lower bound of the imaginary part of the singular point and the singular point is as follows:

ln(ω' _SL )=ln(ω _S )-ln(Δω');

Among them, ln(Δω') is the imaginary part interpolation step.

14. Determine the first singular point imaginary part coefficient and the second singular point imaginary part coefficient according to the upper bound of the imaginary part singular point, the imaginary part data corresponding to the upper bound of the imaginary part singular point upper bound, the singular point and the imaginary part data corresponding to the singular point; The lower bound of the imaginary part singular point, the imaginary part data corresponding to the lower bound of the imaginary part singular point, the singular point and the imaginary part data corresponding to the singular point determine the third singular point imaginary part coefficient and the fourth singular point imaginary part coefficient.

15. Calculate the upper band integral of the imaginary singular point according to the imaginary part coefficient of the first singular point, the imaginary part coefficient of the second singular point, the singular point, the upper bound of the imaginary part singular point and the lower bound of the imaginary part singular point. Among them, the frequency band integral on the imaginary singular point is the integral of the frequency band [ω _S ,ω' _SH ] on the imaginary singular point.

16. Calculate the lower band integral of the imaginary singular point according to the third singular point imaginary part coefficient, the fourth singular point imaginary part coefficient, the singular point, the upper bound of the imaginary part singular point and the lower bound of the imaginary part singular point. Among them, the frequency band integration under the imaginary part singular point is the integration of the frequency band under the imaginary part singular point [ω' _SL ,ω _S ].

17. Add the upper frequency band integral of the imaginary part singular point and the lower frequency band integral of the imaginary part singular point to obtain the frequency band integral of the imaginary part singular point.

18.According to the imaginary part dielectric response fitting function in the limited frequency band, the imaginary part dielectric response fitting function in the imaginary part low epitaxial frequency band, the imaginary part dielectric response fitting function in the imaginary part high epitaxial frequency band, the imaginary part The lowest extension frequency, the highest extension frequency of the imaginary part, the upper bound of the imaginary part singular point and the lower bound of the imaginary part singular point, calculate the imaginary part extension frequency band integral.

19. Calculate the analog real part integral based on the imaginary part singular point frequency band integral and the imaginary part extension frequency band integral.

The imaginary part singular point frequency band integral and the imaginary part extension frequency band integral are added together to obtain the analog real part integral.

20. Judge whether the integral of the simulated real part is less than the preset resolution. When the resolution is greater than or equal to the preset resolution, the imaginary part interpolation step is updated, and step 13 is executed again. When the resolution is less than the preset resolution, the same part of the simulated real part integral and the actual real part integral is used as the imaginary part information of the polarization process, and the different part of the simulated real part integral and the actual real part integral is used as the capacitance information.

21. Obtain the dielectric state according to the conductance information, the real part information of the polarization process, the capacitance information and the imaginary part information of the polarization process.

Fig. 7 is a schematic diagram of comparison of polarizability in an embodiment of the present invention. As shown in Figure 7, the abscissa is the frequency and the unit is Hz; the ordinate is the polarization rate. χ'(ω) is the integral of the actual imaginary part of the polarizability, and χ”(ω) is the integral of the simulated imaginary part of the polarizability. In order to show the calculated integral of the simulated imaginary part of the polarizability more clearly, replace χ” (ω) is shifted vertically downward by two orders of magnitude. It can be seen from Fig. 7 that the actual imaginary part integral of the polarizability is consistent with the simulated imaginary part integral of the polarizability.

Fig. 8 is a schematic diagram of comparison of polarizability in an embodiment of the present invention. As shown in Figure 8, the abscissa is the frequency and the unit is Hz; the ordinate is the polarization rate. χ'(ω) is the actual integral of the real part of the polarizability, and χ”(ω) is the integral of the simulated real part of the susceptibility. In order to show the calculated integral of the real part of the polarizability more clearly, add χ” (ω) is shifted vertically downward by two orders of magnitude. It can be seen from Fig. 8 that the actual real part integral of the polarizability is consistent with the simulated real part integral of the polarizability.

Fig. 9 is a schematic diagram of the simulated real part integral and the simulated imaginary part integral of a complex capacitor in an embodiment of the present invention. FIG. 10 is a schematic diagram of the real part information and the imaginary part information of the polarization process of a complex capacitor in an embodiment of the present invention. FIG. 11 is a schematic diagram of conductance information and infinite frequency capacitance information of a complex capacitor in an embodiment of the present invention. The abscissas of Fig. 9-11 are all frequency, and the unit is Hz; the ordinates are all capacitance, and the unit is pF. C'(ω) in Figure 9 is the integration of the simulated real part of the complex capacitor, C”(ω) is the integration of the simulated imaginary part of the complex capacitor; χ1'(ω) in Figure 10 is the real part of the polarization process of the complex capacitor Information, χ1”(ω) is the imaginary part information of the polarization process of the complex capacitor; σ in Fig. 11 is the conductance information of the complex capacitor, and C∞ is the infinite frequency capacitance information of the complex capacitor.

The present invention can be applied in the dielectric response analysis of various power equipment. The following takes the most common high-temperature vulcanized silicone rubber in the field of external insulation of power systems as an example to illustrate the application of the present invention in detail.

The main components of high-temperature vulcanized silicone rubber are polydimethylsiloxane, nano-silica filler and nano-aluminum hydroxide filler. The test temperature is 80°C, and the measurement frequency range is 10 ^-4 Hz to 10 ³ Hz.

Fig. 12 is a schematic diagram of dielectric response parameters of a high-temperature vulcanized silicone rubber compound capacitor in an embodiment of the present invention. Fig. 13 is a schematic diagram of polarization process information of a high-temperature vulcanized silicone rubber compound capacitor in an embodiment of the present invention. Fig. 14 is a schematic diagram of conductivity information and infinite frequency capacitance information of a high-temperature vulcanized silicone rubber compound capacitor in an embodiment of the present invention. FIG. 15 is a schematic diagram showing the comparison of the real part data of the polarizability of the high-temperature vulcanized silicone rubber compound capacitance in the embodiment of the present invention. 16 is a schematic diagram of comparison of imaginary part data of the polarizability of the high-temperature vulcanized silicone rubber compound capacitance in the embodiment of the present invention. The abscissas of Figure 12-16 are all frequency, the unit is Hz; the ordinates are all capacitance, the unit is pF.

As shown in Figure 12, C'(ω) in Figure 12 is the actual real integral of the dielectric response parameter of the complex capacitor, and C"(ω) is the actual imaginary integral of the dielectric response parameter of the complex capacitor. Intuitively , the actual implementation of the integral portion remains substantially unchanged in the measured frequency band, the actual presence of a significant imaginary part of the integral in the relaxation peak 10 ⁰ Hz ~ 10 ³ Hz band, the 10 ^-4 Hz ~ 10 ⁰ Hz band obvious Conductance process (that is, the relationship between the imaginary part and frequency is -1 power).

As shown in Figure 13, χ1'(ω) in Figure 13 is the real part information of the polarization process of the complex capacitor, and χ1"(ω) is the imaginary part information of the polarization process of the complex capacitor. The real part information of the polarization process is at 10 ^-4 Hz～10 ^-2 Hz frequency band and 10 ¹ Hz～10 ³ Hz frequency band have obvious dispersion phenomenon. Correspondingly, the imaginary part information of the polarization process also has dispersion phenomenon in these two frequency bands. More specifically, polarization The value of the real part information of the process and the value of the imaginary part information of the polarization process ^{increase as the frequency decreases in the 10 -4} Hz～10 ^-2 Hz frequency band, which is a characteristic of the typical low-frequency dispersion process. ¹ Hz ~ 10 ³ Hz frequency range, the imaginary part of the information occurs during polarization relaxation peak and the 10 ² Hz ~ 10 ³ Hz band can be observed polarization value and the imaginary part of the process of the real information part of the polarization process The parallel phenomenon of the numerical value of the information in the double exponential coordinate, that is, the universal exponential law of polarizability is observed.

As shown in Figure 14, σ in Figure 14 is the conductance information of the complex capacitor, and C∞ is the infinite frequency capacitance information of the complex capacitor.

As shown in Figure 15, C'(ω) in Figure 15 is the actual real part integral of the dielectric response parameter of the complex capacitor, and χ1'(ω) is the real part information of the polarization process of the complex capacitor. In the actual real part integration of the dielectric response parameters of the complex capacitor, since the value of the infinite frequency capacitance information is relatively large (as shown in Figure 14), the dispersion process of the real part information in the polarization process is almost completely affected by the infinite frequency capacitance. Covering, which leads to almost no dispersion phenomenon observed in the actual real part integral of the dielectric response parameter of the complex capacitor. If only the actual real part integral of the dielectric response parameters of the complex capacitor is analyzed, it will be misunderstood that the high-temperature vulcanized silicone rubber does not undergo a dielectric dispersion process in the measured frequency band. It can be seen from Figure 15 that this judgment is obviously in essence with the actual physical Inconsistent.

As shown in Fig. 16, C"(ω) in Fig. 16 is the actual imaginary part integral of the dielectric response parameter of the complex capacitor, and χ1"(ω) is the simulated imaginary part integral of the dielectric response parameter of the polarizability. It can be found that in the high frequency band (10 ¹ Hz～10 ³ Hz frequency band), the actual imaginary part integral is consistent with the simulated imaginary part integral (considering the shape coefficient). 10 ⁰ Hz in frequency bands below, the actual score was significantly larger than the imaginary part analog integrated imaginary part (considering the shape factor), is the difference between the two conductivity information. Figure 16 clearly shows that the conductance information mainly affects the measurement results at the low frequency of the imaginary part of the complex capacitance. If only the actual imaginary part integral of the dielectric response parameter of the complex capacitor is analyzed, it will be mistaken to think that the imaginary part of the complex capacitor is determined only by the conductance process in the low frequency range. It can be seen from Figure 16 that this judgment is also obvious from the actual physical essence. Inconsistent. The actual imaginary part integral of the high-temperature vulcanized silicone rubber compound capacitor has not only the contribution of the conductance process, but also the contribution of the low-frequency dispersion process, and the conductance process conceals the contribution of the actual imaginary part integral of the complex capacitance to the polarization process at the low frequency. Only by analyzing the imaginary part of the polarizability can the low-frequency dispersion phenomenon in the dielectric response of silicone rubber be observed.

In summary, the dielectric state analysis method of the embodiment of the present invention iteratively calculates the simulated imaginary part integral according to the real part interpolation step length until the simulated imaginary part integral is less than the preset resolution, and compares the simulated imaginary part integral with the actual imaginary part integral, Obtain the conductance information and the real part information of the polarization process; iteratively calculate the simulated real part integral according to the imaginary part interpolation step length until the simulated real part integral is less than the preset resolution, and compare the simulated real part integral with the actual real part integral to obtain Capacitance information and imaginary part information of the polarization process, and finally obtain the dielectric state according to the conductance information, the real part information of the polarization process, the capacitance information and the imaginary part information of the polarization process, which can accurately analyze and judge the dielectric state, avoiding misjudgments, missed judgments, and Misjudgment saves the cost of operation and maintenance of power equipment.

Based on the same inventive concept, the embodiment of the present invention also provides a dielectric state analysis system. Since the principle of the system to solve the problem is similar to the dielectric state analysis method, the implementation of the system can refer to the implementation of the method, and the repetition will not be repeated. .

Fig. 17 is a structural block diagram of a dielectric state analysis system in an embodiment of the present invention. As shown in Figure 17, the dielectric state analysis system includes:

In one of the embodiments, the real part iteration unit is specifically used for:

Calculate the real part based on the real data corresponding to the upper bound of the real singular point and the upper bound of the real singular point, the singular point, the real data corresponding to the singular point, the lower bound of the real singular point, and the real data corresponding to the lower bound of the real singular point Singularity frequency band integration;

Calculate the real part truncated frequency domain integral according to the real part data corresponding to the lowest real part epitaxial frequency, the lowest real part epitaxial frequency, the real part data corresponding to the highest real part epitaxial frequency, the highest real part epitaxial frequency and the singular point;

According to the real part dielectric response fitting function in the limited frequency band, the real part dielectric response fitting function in the real part low epitaxial frequency band, the real part dielectric response fitting function in the real part high epitaxial frequency band, and the real part lowest epitaxy Frequency, real part maximum extension frequency, real part singular point upper bound and real part singular point lower bound, calculate the real part extension frequency band integral;

Calculate the analog imaginary part integral based on the real part singular point frequency band integral, the real part truncated frequency domain integral and the real part extension frequency band integral;

The imaginary part iteration unit is specifically used for:

Calculate the imaginary part based on the imaginary data corresponding to the upper bound of the imaginary part singular point, the imaginary part corresponding to the upper bound of the imaginary part singular point, the singular point, the imaginary part data corresponding to the singular point, the lower bound of the imaginary part singular point and the imaginary part data corresponding to the lower bound of the imaginary part singular point Singularity frequency band integration;

According to the imaginary part dielectric response fitting function in the limited frequency band, the imaginary part dielectric response fitting function in the imaginary part low extension frequency band, the imaginary part dielectric response fitting function in the imaginary part high extension frequency band, and the imaginary part minimum extension Frequency, imaginary part maximum extension frequency, imaginary part singular point upper bound and imaginary part singular point lower bound, calculate the imaginary part extension frequency band integral;

According to the real data corresponding to the upper bound of the real singular point, the upper bound of the real singular point, the real data corresponding to the singular point, the real data corresponding to the singular point, the lower bound of the real singular point, and the real data corresponding to the lower bound of the real singular point, determine the first Singular point real part coefficients, second singular point real part coefficients, third singular point real part coefficients and fourth singular point real part coefficients;

Calculate the upper band integral of the real singular point according to the real coefficient of the first singular point, the real coefficient of the second singular point, the singular point, the upper bound of the real singular point and the lower bound of the real singular point;

Calculate the lower band integral of the real singular point according to the third singular point real part coefficient, the fourth singular point real part coefficient, the singular point, the upper bound of the real part singular point and the lower bound of the real part singular point;

Add the upper frequency band integral of the real singular point and the lower frequency band integral of the real singular point to obtain the real singular point frequency band integral;

The imaginary part iteration unit is specifically used for:

Determine the first according to the imaginary part data corresponding to the upper bound of the imaginary part singular point, the imaginary part corresponding to the upper bound of the imaginary part singular point, the singular point, the imaginary part data corresponding to the singular point, the lower bound of the imaginary part singular point, and the imaginary part data corresponding to the lower bound of the imaginary part singular point. Singular point imaginary part coefficient, second singular point imaginary part coefficient, third singular point imaginary part coefficient and fourth singular point imaginary part coefficient;

Calculate the upper band integral of the imaginary singular point according to the imaginary part coefficient of the first singular point, the imaginary part coefficient of the second singular point, the singular point, the upper bound of the imaginary singular point and the lower bound of the imaginary singular point;

Calculate the lower band integral of the imaginary singular point according to the third singular point imaginary part coefficient, the fourth singular point imaginary part coefficient, the singular point, the upper bound of the imaginary part singular point and the lower bound of the imaginary part singular point;

Add the upper frequency band integral of the imaginary part singular point and the lower frequency band integral of the imaginary part singular point to obtain the frequency band integral of the imaginary part singular point.

In one of the embodiments, the frequency band integral on the singular point of the real part is calculated by the following formula:

Among them, E ₁ is the frequency band integral on the real singular point, a is the real coefficient of the first singular point, b is the real coefficient of the second singular point, ω _S is the singular point, ω _SH is the upper bound of the real singular point, ω _SL is the lower bound of the singular point of the real part;

Calculate the frequency band integral under the singular point of the real part by the following formula:

Among them, E ₂ is the frequency band integral of the real part of the singular point, c is the real part coefficient of the third singular point, and d is the real part coefficient of the fourth singular point;

The frequency band integral on the singular point of the imaginary part is calculated by the following formula:

Wherein, E _'1 is the imaginary part of the integral bands singular point, a' is a first singular point of the imaginary part of the coefficient, b 'is the imaginary part of the second singular point coefficients, ω' _SH bounded singularity point on the imaginary part, ω _'SL Is the lower bound of the imaginary part singular point;

Calculate the lower band integral of the imaginary part singular point by the following formula:

Calculate the truncated frequency domain integral on the real part according to the real data corresponding to the highest epitaxial frequency of the real part, the highest epitaxial frequency of the real part and the singular point;

Calculate the lower truncated frequency domain integral of the real part according to the real data corresponding to the lowest epitaxial frequency of the real part, the lowest epitaxial frequency of the real part and the singular point;

In one of the embodiments, the truncated frequency domain integral on the real part is calculated by the following formula:

Among them, F ₁ is the truncated frequency domain integral on the real part, χ'(ω _Ext-H ) is the real part data corresponding to the highest extension frequency of the real part, ω _S is the singularity point, and ω _Ext-H is the highest extension frequency of the real part;

Calculate the truncated frequency domain integral under the real part by the following formula:

In one of the embodiments, the real interpolation step size is updated by the following formula:

Among them, ln(Δω _n ) is the real part interpolation step in the nth iteration, and ln(Δω _n+1 ) is the real part interpolation step in the n+1th iteration;

Update the imaginary part interpolation step size by the following formula:

Use the same part of the simulated imaginary part integral and the actual imaginary part integral as the real part information of the polarization process, and use the different part of the simulated imaginary part integral and the actual imaginary part integral as the conductance information;

The imaginary part iteration unit is specifically used for:

The same part of the simulated real part integral and the actual real part integral is regarded as the imaginary part information of the polarization process, and the different part of the simulated real part integral and the actual real part integral is regarded as the capacitance information.

In summary, the dielectric state analysis system of the embodiment of the present invention iteratively calculates the simulated imaginary part integral according to the real part interpolation step length until the simulated imaginary part integral is less than the preset resolution, and compares the simulated imaginary part integral with the actual imaginary part integral, Obtain the conductance information and the real part information of the polarization process; iteratively calculate the simulated real part integral according to the imaginary part interpolation step length until the simulated real part integral is less than the preset resolution, and compare the simulated real part integral with the actual real part integral to obtain Capacitance information and imaginary part information of the polarization process, and finally obtain the dielectric state according to the conductance information, the real part information of the polarization process, the capacitance information and the imaginary part information of the polarization process, which can accurately analyze and judge the dielectric state, avoiding misjudgments, missed judgments, and Misjudgment saves the cost of operation and maintenance of power equipment.

The embodiment of the present invention also provides a computer device, including a memory, a processor, and a computer program stored in the memory and running on the processor. The processor can implement all or part of the dielectric state analysis method when the computer program is executed. For example, when a processor executes a computer program, the following can be realized:

Perform the following iterative processing:

In summary, the computer device of the embodiment of the present invention iteratively calculates the simulated imaginary integral according to the real interpolation step, until the simulated imaginary integral is less than the preset resolution, and compares the simulated imaginary integral with the actual imaginary integral to obtain the conductance Information and real part information of the polarization process; iteratively calculate the simulated real part integral according to the imaginary part interpolation step, until the simulated real part integral is less than the preset resolution, and compare the simulated real part integral with the actual real part integral to obtain capacitance information And the imaginary part information of the polarization process, and finally obtain the dielectric state according to the conductance information, the real part information of the polarization process, the capacitance information and the imaginary part information of the polarization process, which can accurately analyze and judge the dielectric state, and avoid misjudgment, missed judgment and wrong judgment. , Saving the cost of power equipment operation and maintenance.

The embodiment of the present invention also provides a computer-readable storage medium on which a computer program is stored. When the computer program is executed by a processor, all or part of the content of the dielectric state analysis method can be realized. For example, when the processor executes the computer program, To achieve the following:

Perform the following iterative processing:

In summary, the computer-readable storage medium of the embodiment of the present invention iteratively calculates the simulated imaginary part integral according to the real part interpolation step length until the simulated imaginary part integral is less than the preset resolution, and compares the simulated imaginary part integral with the actual imaginary part integral , Obtain the conductance information and the real part information of the polarization process; iteratively calculate the simulated real part integral according to the imaginary part interpolation step length until the simulated real part integral is less than the preset resolution, and compare the simulated real part integral with the actual real part integral, Obtain the capacitance information and the imaginary part information of the polarization process, and finally obtain the dielectric state according to the conductance information, the real part information of the polarization process, the capacitance information and the imaginary part information of the polarization process, which can accurately analyze and judge the dielectric state, and avoid misjudgments and missed judgments. And misjudgment, saving the cost of power equipment operation and maintenance.

The specific embodiments described above further describe the purpose, technical solutions and beneficial effects of the present invention in further detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the scope of the present invention. The protection scope, any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Those skilled in the art should understand that the embodiments of the present invention can be provided as a method, a system, or a computer program product. Therefore, the present invention may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

The present invention is described with reference to flowcharts and/or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and/or block in the flowchart and/or block diagram, and the combination of processes and/or blocks in the flowchart and/or block diagram can be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing equipment to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing equipment are generated It is a device that realizes the functions specified in one process or multiple processes in the flowchart and/or one block or multiple blocks in the block diagram.

These computer program instructions can also be stored in a computer-readable memory that can guide a computer or other programmable data processing equipment to work in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture including the instruction device. The device implements the functions specified in one process or multiple processes in the flowchart and/or one block or multiple blocks in the block diagram.

These computer program instructions can also be loaded on a computer or other programmable data processing equipment, so that a series of operation steps are executed on the computer or other programmable equipment to produce computer-implemented processing, so as to execute on the computer or other programmable equipment. The instructions provide steps for implementing the functions specified in one process or multiple processes in the flowchart and/or one block or multiple blocks in the block diagram.

In the present invention, specific examples are used to illustrate the principles and implementation of the present invention. The description of the above examples is only used to help understand the method and core idea of the present invention; at the same time, for those of ordinary skill in the art, according to this The idea of the invention will change in the specific implementation and the scope of application. In summary, the content of this specification should not be construed as limiting the invention.

Claims

A method for analyzing the state of a dielectric, which is characterized in that it includes:

Acquire real data and imaginary data of dielectric response parameters corresponding to multiple frequencies;

Determine the lowest epitaxial frequency of the real part and the lowest epitaxial frequency of the imaginary part according to the lowest frequency, and determine the highest epitaxial frequency of the real part and the highest epitaxial frequency of the imaginary part according to the highest frequency;

Fit the real part data corresponding to the multiple frequencies to obtain the real part dielectric response fitting function in the limited frequency band; fit the imaginary part data corresponding to the multiple frequencies to obtain the imaginary part dielectric response in the limited frequency band Fitting function; the limited frequency band is located between the lowest frequency and the highest frequency;

According to the real part data corresponding to the lowest frequency and the real part data corresponding to the second lowest frequency, the real part dielectric response fitting function in the low epitaxial band of the real part is obtained, and according to the real part data corresponding to the highest frequency and the second highest frequency The corresponding real part data obtains the real part dielectric response fitting function in the real part high epitaxial frequency band; according to the imaginary part data corresponding to the lowest frequency and the imaginary part data corresponding to the second lowest frequency, the imaginary part in the imaginary part low epitaxial frequency band is obtained. Partial dielectric response fitting function, according to the imaginary part data corresponding to the highest frequency and the imaginary part data corresponding to the second-highest frequency to obtain the imaginary part dielectric response fitting function in the imaginary part high-extension frequency band; the real part low-extension The frequency band is located between the lowest frequency and the lowest epitaxial frequency of the real part, the high epitaxial frequency band of the real part is located between the highest frequency and the highest epitaxial frequency of the real part, and the low epitaxial frequency band of the imaginary part is located at the Between the lowest frequency and the lowest epitaxial frequency of the imaginary part, the imaginary high epitaxial frequency band is located between the highest frequency and the highest epitaxial frequency of the imaginary part;

Perform the following iterative processing:

Calculate the upper bound of the real singular point and the lower bound of the real singular point according to the singular point and the real part interpolation step length; wherein the singular point is located between the highest frequency and the lowest frequency;

According to the upper bound of the real part singular point, the lower bound of the real part singular point, the singular point, the lowest epitaxial frequency of the real part, the highest epitaxial frequency of the real part, and the real part dielectric response in the limited frequency band A fitting function, a real part dielectric response fitting function in the real part low epitaxial frequency band, and a real part dielectric response fitting function in the real part high epitaxial frequency band to calculate a simulated imaginary part integral;

Determine whether the simulated imaginary part integral is less than the preset resolution; when it is smaller than the preset resolution, compare the simulated imaginary part integral with the actual imaginary part integral to obtain conductance information and polarization process real part information, Otherwise update the real part interpolation step;

Perform the following iterative processing:

Calculate the upper bound and lower bound of the imaginary part singular point according to the singular point and the imaginary part interpolation step;

According to the upper bound of the imaginary part singular point, the lower bound of the imaginary part singular point, the singular point, the lowest epitaxial frequency of the imaginary part, the highest epitaxial frequency of the imaginary part, and the imaginary part dielectric response in the limited frequency band A fitting function, an imaginary part dielectric response fitting function in the imaginary part low epitaxial frequency band, and an imaginary part dielectric response fitting function in the imaginary part high epitaxial frequency band to calculate an analog real part integral;

Determine whether the simulated real part integral is less than the preset resolution; when it is smaller than the preset resolution, compare the simulated real part integral with the actual real part integral to obtain capacitance information and imaginary part information of the polarization process, Otherwise update the imaginary part interpolation step;

The dielectric state is obtained according to the conductance information, the real part information of the polarization process, the capacitance information, and the imaginary part information of the polarization process.
The dielectric state analysis method according to claim 1, wherein:

The calculation of the simulated imaginary integral includes:

According to the real data corresponding to the upper bound of the real singular point, the real data corresponding to the upper bound of the real singular point, the singular point, the real data corresponding to the singular point, the lower bound of the real singular point and the lower bound of the real singular point correspond to Real part data to calculate the real part singular point frequency band integral;

Calculate the real part truncated frequency domain integral according to the real part data corresponding to the lowest epitaxial frequency of the real part, the lowest epitaxial frequency of the real part, the real part data corresponding to the highest epitaxial frequency of the real part, the highest epitaxial frequency of the real part and the singular point ；

According to the real part dielectric response fitting function in the limited frequency band, the real part dielectric response fitting function in the real part low epitaxial frequency band, and the real part dielectric response fitting function in the real part high epitaxial frequency band Function, the lowest epitaxial frequency of the real part, the highest epitaxial frequency of the real part, the upper bound of the real part singular point and the lower bound of the real part singular point, calculating the real part epitaxial frequency band integral;

Calculating an analog imaginary part integral according to the real part singular point frequency band integral, the real part truncated frequency domain integral, and the real part epitaxial frequency band integral;

Calculating the integral of the real part of the simulation includes:

According to the upper bound of the imaginary part singular point, the imaginary part data corresponding to the upper bound of the imaginary part singular point, the singular point, the imaginary part data corresponding to the singular point, the lower bound of the imaginary part singular point and the lower bound of the imaginary part singular point corresponding to The imaginary part data calculates the imaginary part singular point frequency band integral;

According to the imaginary part dielectric response fitting function in the limited frequency band, the imaginary part dielectric response fitting function in the imaginary part low epitaxial frequency band, and the imaginary part dielectric response fitting function in the imaginary part high epitaxial frequency band Function, the lowest epitaxial frequency of the imaginary part, the highest epitaxial frequency of the imaginary part, the upper bound of the imaginary part singular point and the lower bound of the imaginary part singular point, calculating the integral of the imaginary part epitaxial frequency band;

The analog real part integral is calculated according to the imaginary part singular point frequency band integral and the imaginary part extension frequency band integral.
The dielectric state analysis method according to claim 2, wherein:

According to the real data corresponding to the upper bound of the real singular point, the real data corresponding to the upper bound of the real singular point, the singular point, the real data corresponding to the singular point, the lower bound of the real singular point and the lower bound of the real singular point correspond to The real part data calculates the real part singular point frequency band integral, including:

According to the real data corresponding to the upper bound of the real singular point, the real data corresponding to the upper bound of the real singular point, the singular point, the real data corresponding to the singular point, the lower bound of the real singular point and the lower bound of the real singular point correspond to The real part data determines the first singular point real part coefficient, the second singular point real part coefficient, the third singular point real part coefficient, and the fourth singular point real part coefficient;

Calculate the real part singular point upper band integral based on the first singular point real part coefficient, the second singular point real part coefficient, the singular point, the real part singular point upper bound, and the real part singular point lower bound ；

Calculate the lower band integral of the real singular point according to the real part coefficient of the third singular point, the real part coefficient of the fourth singular point, the singular point, the upper bound of the real singular point, and the lower bound of the real singular point ；

Adding the upper frequency band integral of the real part singular point and the lower frequency band integral of the real part singular point to obtain the real part singular point frequency band integral;

According to the upper bound of the imaginary part singular point, the imaginary part data corresponding to the upper bound of the imaginary part singular point, the singular point, the imaginary part data corresponding to the singular point, the lower bound of the imaginary part singular point and the lower bound of the imaginary part singular point corresponding to The imaginary part data calculates the imaginary part singular point frequency band integral, including:

According to the upper bound of the imaginary part singular point, the imaginary part data corresponding to the upper bound of the imaginary part singular point, the singular point, the imaginary part data corresponding to the singular point, the lower bound of the imaginary part singular point and the lower bound of the imaginary part singular point corresponding to The imaginary part data determines the first singular point imaginary part coefficient, the second singular point imaginary part coefficient, the third singular point imaginary part coefficient, and the fourth singular point imaginary part coefficient;

Calculate the upper band integral of the imaginary part singular point according to the imaginary part coefficient of the first singular point, the imaginary part coefficient of the second singular point, the singular point, the upper bound of the imaginary part singular point, and the lower bound of the imaginary part singular point ；

Calculate the lower band integral of the imaginary part singular point according to the third singular point imaginary part coefficient, the fourth singular point imaginary part coefficient, the singular point, the upper bound of the imaginary part singular point, and the lower bound of the imaginary part singular point ；

The upper frequency band integral of the imaginary part singular point and the lower frequency band integral of the imaginary part singular point are added to obtain the frequency band integral of the imaginary part singular point.
The dielectric state analysis method according to claim 3, wherein the frequency band integral on the singular point of the real part is calculated by the following formula:

Among them, E 1 is the frequency band integral on the real singular point, a is the real coefficient of the first singular point, b is the real coefficient of the second singular point, ω S is the singular point, ω SH is the upper bound of the real singular point, ω SL is the lower bound of the singular point of the real part;

Calculate the frequency band integral under the singular point of the real part by the following formula:

Among them, E 2 is the frequency band integral of the real part of the singular point, c is the real part coefficient of the third singular point, and d is the real part coefficient of the fourth singular point;

The frequency band integral on the singular point of the imaginary part is calculated by the following formula:

Wherein, E '1 is the imaginary part of the integral bands singular point, a' is a first singular point of the imaginary part of the coefficient, b 'is the imaginary part of the second singular point coefficients, ω' SH bounded singularity point on the imaginary part, ω 'SL Is the lower bound of the imaginary part singular point;

Calculate the lower band integral of the imaginary part singular point by the following formula:

Wherein, E '2 is a lower frequency band integrating the imaginary part of a singular point, c' is the coefficient of the imaginary part of the third singular point, d 'is the imaginary part of a singular point of the fourth coefficient.
The dielectric state analysis method according to claim 2, wherein the real part data corresponding to the lowest epitaxial frequency of the real part, the lowest epitaxial frequency of the real part, the real part data corresponding to the highest epitaxial frequency of the real part, the real part The highest extension frequency of the part and the singular point calculation real part truncated frequency domain integral, including:

Calculating a truncated frequency domain integral on the real part according to the real part data corresponding to the highest epitaxial frequency of the real part, the highest epitaxial frequency of the real part, and the singular point;

Calculating the lower truncated frequency domain integral of the real part according to the real part data corresponding to the lowest epitaxial frequency of the real part, the lowest epitaxial frequency of the real part, and the singular point;

The upper truncated frequency domain integral of the real part and the lower truncated frequency domain integral of the real part are added to obtain the real part truncated frequency domain integral.
The dielectric state analysis method according to claim 5, wherein:

The truncated frequency domain integral on the real part is calculated by the following formula:

Among them, F 1 is the truncated frequency domain integral on the real part, χ'(ω Ext-H ) is the real part data corresponding to the highest extension frequency of the real part, ω S is the singularity point, and ω Ext-H is the highest extension frequency of the real part;

Calculate the truncated frequency domain integral under the real part by the following formula:

Among them, F 2 is the lower truncated frequency domain integral of the real part, χ'(ω Ext-L ) is the real part data corresponding to the lowest epitaxial frequency of the real part, and ω Ext-L is the lowest epitaxial frequency of the real part.
The dielectric state analysis method according to claim 1, wherein:

Update the real part interpolation step size by the following formula:

Among them, ln(Δω n ) is the real part interpolation step in the nth iteration, and ln(Δω n+1 ) is the real part interpolation step in the n+1th iteration;

Update the imaginary part interpolation step size by the following formula:

Among them, ln(Δω' n ) is the imaginary part interpolation step in the nth iteration, and ln(Δω' n+1 ) is the imaginary part interpolation step in the n+1th iteration.
The dielectric state analysis method according to claim 1, wherein:

Obtaining conductance information and real part information of polarization process includes:

Taking the same part of the simulated imaginary part integral and the actual imaginary part integral as the real part information of the polarization process, and taking the different part of the simulated imaginary part integral and the actual imaginary part integral as the conductance information;

Obtaining capacitance information and imaginary part information of the polarization process include:

The same part in the simulated real part integral and the actual real part integral is used as the imaginary part information of the polarization process, and the different part in the simulated real part integral and the actual real part integral is used as capacitance information.
A dielectric state analysis system, which is characterized in that it comprises:

An acquiring unit for acquiring real part data and imaginary part data of dielectric response parameters corresponding to multiple frequencies;

The determining unit is used to determine the lowest epitaxial frequency of the real part and the lowest epitaxial frequency of the imaginary part according to the lowest frequency, and determine the highest epitaxial frequency of the real part and the highest epitaxial frequency of the imaginary part according to the highest frequency;

The finite frequency band fitting function unit is used to fit the real part data corresponding to the multiple frequencies to obtain the real part dielectric response fitting function in the finite frequency band; fit the imaginary part data corresponding to the multiple frequencies to obtain Imaginary part dielectric response fitting function in a limited frequency band; wherein, the limited frequency band is located between the lowest frequency and the highest frequency;

The epitaxial frequency band fitting function unit is used to obtain the real part dielectric response fitting function in the real low epitaxial frequency band according to the real part data corresponding to the lowest frequency and the real part data corresponding to the second-lowest frequency, and according to the highest frequency The corresponding real part data and the real part data corresponding to the second highest frequency obtain the real part dielectric response fitting function in the real part high epitaxial frequency band; according to the imaginary part data corresponding to the lowest frequency and the imaginary part data corresponding to the second lowest frequency The imaginary part dielectric response fitting function in the imaginary part low epitaxial frequency band is obtained, and the imaginary part dielectric response simulation function in the imaginary part high epitaxial frequency band is obtained according to the imaginary part data corresponding to the highest frequency and the imaginary part data corresponding to the second highest frequency. Resultant function; the real low epitaxial frequency band is located between the lowest frequency and the real lowest epitaxial frequency, the real high epitaxial frequency band is located between the highest frequency and the real highest epitaxial frequency, so The imaginary part low epitaxial frequency band is located between the lowest frequency and the imaginary part lowest epitaxial frequency, and the imaginary part high epitaxial frequency band is located between the highest frequency and the imaginary part highest epitaxial frequency;

The real part iterative unit is used to perform the following iterative processing:

Calculate the upper bound of the real singular point and the lower bound of the real singular point according to the singular point and the real part interpolation step length; wherein the singular point is located between the highest frequency and the lowest frequency;

According to the upper bound of the real part singular point, the lower bound of the real part singular point, the singular point, the lowest epitaxial frequency of the real part, the highest epitaxial frequency of the real part, and the real part dielectric response in the limited frequency band A fitting function, a real part dielectric response fitting function in the real part low epitaxial frequency band, and a real part dielectric response fitting function in the real part high epitaxial frequency band to calculate a simulated imaginary part integral;

Determine whether the simulated imaginary part integral is less than the preset resolution; when it is smaller than the preset resolution, compare the simulated imaginary part integral with the actual imaginary part integral to obtain conductance information and polarization process real part information, Otherwise update the real part interpolation step;

The imaginary part iterative unit is used to perform the following iterative processing:

Calculate the upper bound and lower bound of the imaginary part singular point according to the singular point and the imaginary part interpolation step;

According to the upper bound of the imaginary part singular point, the lower bound of the imaginary part singular point, the singular point, the lowest epitaxial frequency of the imaginary part, the highest epitaxial frequency of the imaginary part, and the imaginary part dielectric response in the limited frequency band A fitting function, an imaginary part dielectric response fitting function in the imaginary part low epitaxial frequency band, and an imaginary part dielectric response fitting function in the imaginary part high epitaxial frequency band to calculate an analog real part integral;

Determine whether the simulated real part integral is less than the preset resolution; when it is smaller than the preset resolution, compare the simulated real part integral with the actual real part integral to obtain capacitance information and imaginary part information of the polarization process, Otherwise update the imaginary part interpolation step;

The dielectric state unit is configured to obtain the dielectric state according to the conductance information, the real part information of the polarization process, the capacitance information, and the imaginary part information of the polarization process.
The dielectric state analysis system according to claim 9, wherein:

The real part iteration unit is specifically used for:

According to the real data corresponding to the upper bound of the real singular point, the real data corresponding to the upper bound of the real singular point, the singular point, the real data corresponding to the singular point, the lower bound of the real singular point and the lower bound of the real singular point correspond to Real part data to calculate the real part singular point frequency band integral;

Calculate the real part truncated frequency domain integral according to the real part data corresponding to the lowest epitaxial frequency of the real part, the lowest epitaxial frequency of the real part, the real part data corresponding to the highest epitaxial frequency of the real part, the highest epitaxial frequency of the real part and the singular point ；

According to the real part dielectric response fitting function in the limited frequency band, the real part dielectric response fitting function in the real part low epitaxial frequency band, and the real part dielectric response fitting function in the real part high epitaxial frequency band Function, the lowest epitaxial frequency of the real part, the highest epitaxial frequency of the real part, the upper bound of the real part singular point and the lower bound of the real part singular point, calculating the real part epitaxial frequency band integral;

Calculating an analog imaginary part integral according to the real part singular point frequency band integral, the real part truncated frequency domain integral, and the real part epitaxial frequency band integral;

The imaginary part iteration unit is specifically used for:

According to the upper bound of the imaginary part singular point, the imaginary part data corresponding to the upper bound of the imaginary part singular point, the singular point, the imaginary part data corresponding to the singular point, the lower bound of the imaginary part singular point and the lower bound of the imaginary part singular point corresponding to The imaginary part data calculates the imaginary part singular point frequency band integral;

According to the imaginary part dielectric response fitting function in the limited frequency band, the imaginary part dielectric response fitting function in the imaginary part low epitaxial frequency band, and the imaginary part dielectric response fitting function in the imaginary part high epitaxial frequency band Function, the lowest epitaxial frequency of the imaginary part, the highest epitaxial frequency of the imaginary part, the upper bound of the imaginary part singular point and the lower bound of the imaginary part singular point, calculating the integral of the imaginary part epitaxial frequency band;

The analog real part integral is calculated according to the imaginary part singular point frequency band integral and the imaginary part extension frequency band integral.
The dielectric state analysis system according to claim 10, wherein the real part iteration unit is specifically configured to:

According to the real data corresponding to the upper bound of the real singular point, the real data corresponding to the upper bound of the real singular point, the singular point, the real data corresponding to the singular point, the lower bound of the real singular point and the lower bound of the real singular point correspond to The real part data determines the first singular point real part coefficient, the second singular point real part coefficient, the third singular point real part coefficient, and the fourth singular point real part coefficient;

Calculate the real part singular point upper band integral based on the first singular point real part coefficient, the second singular point real part coefficient, the singular point, the real part singular point upper bound, and the real part singular point lower bound ；

Calculate the lower band integral of the real singular point according to the real part coefficient of the third singular point, the real part coefficient of the fourth singular point, the singular point, the upper bound of the real singular point, and the lower bound of the real singular point ；

Adding the upper frequency band integral of the real part singular point and the lower frequency band integral of the real part singular point to obtain the real part singular point frequency band integral;

The imaginary part iteration unit is specifically used for:

According to the upper bound of the imaginary part singular point, the imaginary part data corresponding to the upper bound of the imaginary part singular point, the singular point, the imaginary part data corresponding to the singular point, the lower bound of the imaginary part singular point and the lower bound of the imaginary part singular point corresponding to The imaginary part data determines the first singular point imaginary part coefficient, the second singular point imaginary part coefficient, the third singular point imaginary part coefficient, and the fourth singular point imaginary part coefficient;

Calculate the upper band integral of the imaginary part singular point according to the imaginary part coefficient of the first singular point, the imaginary part coefficient of the second singular point, the singular point, the upper bound of the imaginary part singular point, and the lower bound of the imaginary part singular point ；

Calculate the lower band integral of the imaginary part singular point according to the third singular point imaginary part coefficient, the fourth singular point imaginary part coefficient, the singular point, the upper bound of the imaginary part singular point, and the lower bound of the imaginary part singular point ；

The upper frequency band integral of the imaginary part singular point and the lower frequency band integral of the imaginary part singular point are added to obtain the frequency band integral of the imaginary part singular point.
The dielectric state analysis system according to claim 11, wherein the frequency band integral on the singular point of the real part is calculated by the following formula:

Among them, E 1 is the frequency band integral on the real singular point, a is the real coefficient of the first singular point, b is the real coefficient of the second singular point, ω S is the singular point, ω SH is the upper bound of the real singular point, ω SL is the lower bound of the singular point of the real part;

Calculate the frequency band integral under the singular point of the real part by the following formula:

Among them, E 2 is the frequency band integral of the real part of the singular point, c is the real part coefficient of the third singular point, and d is the real part coefficient of the fourth singular point;

The frequency band integral on the singular point of the imaginary part is calculated by the following formula:

Wherein, E '1 is the imaginary part of the integral bands singular point, a' is a first singular point of the imaginary part of the coefficient, b 'is the imaginary part of the second singular point coefficients, ω' SH bounded singularity point on the imaginary part, ω 'SL Is the lower bound of the imaginary part singular point;

Calculate the lower band integral of the imaginary part singular point by the following formula:

Wherein, E '2 is a lower frequency band integrating the imaginary part of a singular point, c' is the coefficient of the imaginary part of the third singular point, d 'is the imaginary part of a singular point of the fourth coefficient.
The dielectric state analysis system according to claim 10, wherein the real part iteration unit is specifically configured to:

Calculating a truncated frequency domain integral on the real part according to the real part data corresponding to the highest epitaxial frequency of the real part, the highest epitaxial frequency of the real part, and the singular point;

Calculating the lower truncated frequency domain integral of the real part according to the real part data corresponding to the lowest epitaxial frequency of the real part, the lowest epitaxial frequency of the real part, and the singular point;

The upper truncated frequency domain integral of the real part and the lower truncated frequency domain integral of the real part are added to obtain the real part truncated frequency domain integral.
The dielectric state analysis system according to claim 13, wherein:

The truncated frequency domain integral on the real part is calculated by the following formula:

Among them, F 1 is the truncated frequency domain integral on the real part, χ'(ω Ext-H ) is the real part data corresponding to the highest extension frequency of the real part, ω S is the singularity point, and ω Ext-H is the highest extension frequency of the real part;

Calculate the truncated frequency domain integral under the real part by the following formula:

Among them, F 2 is the lower truncated frequency domain integral of the real part, χ'(ω Ext-L ) is the real part data corresponding to the lowest epitaxial frequency of the real part, and ω Ext-L is the lowest epitaxial frequency of the real part.
The dielectric state analysis system according to claim 9, wherein:

Update the real part interpolation step size by the following formula:

Among them, ln(Δω n ) is the real part interpolation step in the nth iteration, and ln(Δω n+1 ) is the real part interpolation step in the n+1th iteration;

Update the imaginary part interpolation step size by the following formula:

Among them, ln(Δω' n ) is the imaginary part interpolation step in the nth iteration, and ln(Δω' n+1 ) is the imaginary part interpolation step in the n+1th iteration.
The dielectric state analysis system according to claim 9, wherein the real part iteration unit is specifically used for:

Taking the same part of the simulated imaginary part integral and the actual imaginary part integral as the real part information of the polarization process, and taking the different part of the simulated imaginary part integral and the actual imaginary part integral as the conductance information;

The imaginary part iteration unit is specifically used for:

The same part in the simulated real part integral and the actual real part integral is used as the imaginary part information of the polarization process, and the different part in the simulated real part integral and the actual real part integral is used as capacitance information.
A computer device, comprising a memory, a processor, and a computer program stored on the memory and running on the processor, wherein the processor implements the computer program described in any one of claims 1 to 8 when the processor executes the computer program. The steps of the dielectric state analysis method described.
A computer-readable storage medium with a computer program stored thereon, wherein the computer program implements the steps of the dielectric state analysis method according to any one of claims 1 to 8 when the computer program is executed by a processor.