CN111103511B

CN111103511B - Dielectric state analysis method, system, computer, and storage medium

Info

Publication number: CN111103511B
Application number: CN201911081050.6A
Authority: CN
Inventors: 高岩峰; 卢毅; 张旭; 王馨; 范硕超; 王书渊; 薛文祥; 王辉; 陈原; 张吉飞; 苏斌
Original assignee: State Grid Corp of China SGCC; North China Electric Power Research Institute Co Ltd; State Grid Jibei Electric Power Co Ltd; Electric Power Research Institute of State Grid Jibei Electric Power Co Ltd
Current assignee: State Grid Corp of China SGCC; North China Electric Power Research Institute Co Ltd; State Grid Jibei Electric Power Co Ltd; Electric Power Research Institute of State Grid Jibei Electric Power Co Ltd
Priority date: 2019-11-07
Filing date: 2019-11-07
Publication date: 2021-06-15
Anticipated expiration: 2039-11-07
Also published as: CN111103511A; WO2021088453A1

Abstract

The invention provides a dielectric state analysis method, a system, a computer and a storage medium. The method comprises the following steps: iteratively calculating the simulated imaginary part integral according to the interpolation step length of the real part until whether the simulated imaginary part integral is smaller than the preset resolution or not, and comparing the simulated imaginary part integral with the actual imaginary part integral to obtain the conductance information and the real part information of the polarization process; and finally, obtaining the dielectric state according to the conductance information, the polarization process real part information, the capacitance information and the polarization process imaginary part information, and accurately analyzing and judging the dielectric state, so that misjudgment, missing judgment and misjudgment are avoided, and the cost of operating and maintaining the power equipment is saved.

Description

Dielectric state analysis method, system, computer, and storage medium

Technical Field

The present invention relates to the field of dielectrics, and in particular, to a dielectric state analysis method, system, computer, and storage medium.

Background

In all electrical equipment, the support of dielectric materials is required during the production, transmission and application of electrical energy, such as in turn-to-turn insulation systems of generators, insulation systems of transformers, insulation systems of cables, insulation systems of insulators, etc. How to characterize and research the insulation state of various dielectric materials is an important research topic in the operation and maintenance of power equipment.

In existing research and engineering practical applications, decoupling analysis of dielectric response measurement results of dielectric/electrical equipment cannot be realized, so that a conductance process, a polarization process and an infinite frequency capacitance process of the dielectric/electrical equipment cannot be obtained, the state of the dielectric/electrical equipment cannot be accurately judged, inconvenience is brought to state diagnosis of electrical equipment of an electrical system, and misjudgment, missed judgment and misjudgment are easily caused.

Disclosure of Invention

The embodiments of the present invention mainly aim to provide a method, a system, a computer and a storage medium for analyzing and determining a dielectric state accurately, so as to avoid erroneous determination, missed determination and erroneous determination, and save the cost of operating and maintaining power equipment.

In order to achieve the above object, an embodiment of the present invention provides a dielectric state analysis method, including:

acquiring real part data and imaginary part data of dielectric response parameters corresponding to a plurality of frequencies;

determining the lowest extension frequency of a real part and the lowest extension frequency of an imaginary part according to the lowest frequency, and determining the highest extension frequency of the real part and the highest extension frequency of the imaginary part according to the highest frequency;

fitting real part data corresponding to a plurality of frequencies to obtain a real part dielectric response fitting function in a limited frequency band; fitting imaginary part data corresponding to a plurality of frequencies to obtain an imaginary part dielectric response fitting function in a limited frequency band; the limited frequency band is located between the lowest frequency and the highest frequency;

obtaining a real part dielectric response fitting function in a real part low-extension frequency band according to the real part data corresponding to the lowest frequency and the real part data corresponding to the second lowest frequency, and obtaining a real part dielectric response fitting function in a real part high-extension frequency band according to the real part data corresponding to the highest frequency and the real part data corresponding to the second highest frequency; obtaining an imaginary part dielectric response fitting function in an imaginary part low extension frequency band according to imaginary part data corresponding to the lowest frequency and imaginary part data corresponding to the second lowest frequency, and obtaining an imaginary part dielectric response fitting function in an imaginary part high extension frequency band according to the imaginary part data corresponding to the highest frequency and the imaginary part data corresponding to the second highest frequency; the real part low-extension frequency band is located between the lowest frequency and the real part lowest extension frequency, the real part high-extension frequency band is located between the highest frequency and the real part highest extension frequency, the imaginary part low-extension frequency band is located between the lowest frequency and the imaginary part lowest extension frequency, and the imaginary part high-extension frequency band is located between the highest frequency and the imaginary part highest extension frequency;

the following iterative process is performed:

calculating an upper boundary of a singular point of a real part and a lower boundary of the singular point of the real part according to the singular point and the interpolation step length of the real part; wherein the singular point is located between the highest frequency and the lowest frequency;

calculating a simulated imaginary part integral according to a real part singular point upper boundary, a real part singular point lower boundary, a singular point, a real part minimum extension frequency, a real part maximum extension frequency, a real part dielectric response fitting function in a limited frequency band, a real part dielectric response fitting function in a real part low extension frequency band and a real part dielectric response fitting function in a real part high extension frequency band;

judging whether the analog imaginary part integral is smaller than a preset resolution; when the real part interpolation step length is smaller than the preset resolution, comparing the simulated imaginary part integral with the actual imaginary part integral to obtain conductance information and real part information in the polarization process, otherwise, updating the real part interpolation step length;

the following iterative process is performed:

calculating an imaginary part singular point upper boundary and an imaginary part singular point lower boundary according to the singular point and the imaginary part interpolation step length;

calculating a simulated real part integral according to an imaginary part singular point upper boundary, an imaginary part singular point lower boundary, a singular point, an imaginary part minimum extension frequency, an imaginary part maximum extension frequency, an imaginary part dielectric response fitting function in a limited frequency band, an imaginary part dielectric response fitting function in an imaginary part low extension frequency band and an imaginary part dielectric response fitting function in an imaginary part high extension frequency band;

judging whether the integral of the analog real part is smaller than a preset resolution; when the resolution is smaller than the preset resolution, comparing the simulated real part integral with the actual real part integral to obtain capacitance information and imaginary part information in the polarization process, and otherwise, updating the imaginary part interpolation step length;

and obtaining the dielectric state according to the conductance information, the real part information of the polarization process, the capacitance information and the imaginary part information of the polarization process.

An embodiment of the present invention further provides a dielectric state analysis system, including:

the acquisition unit is used for acquiring real part data and imaginary part data of the dielectric response parameters corresponding to a plurality of frequencies;

the determining unit is used for determining the lowest extension frequency of the real part and the lowest extension frequency of the imaginary part according to the lowest frequency and determining the highest extension frequency of the real part and the highest extension frequency of the imaginary part according to the highest frequency;

the finite frequency band fitting function unit is used for fitting real part data corresponding to a plurality of frequencies to obtain a real part dielectric response fitting function in a finite frequency band; fitting imaginary part data corresponding to a plurality of frequencies to obtain an imaginary part dielectric response fitting function in a limited frequency band; wherein, the limited frequency band is positioned between the lowest frequency and the highest frequency;

the extension frequency band fitting function unit is used for obtaining a real part dielectric response fitting function in a real part low extension frequency band according to the real part data corresponding to the lowest frequency and the real part data corresponding to the second lowest frequency, and obtaining a real part dielectric response fitting function in a real part high extension frequency band according to the real part data corresponding to the highest frequency and the real part data corresponding to the second highest frequency; obtaining an imaginary part dielectric response fitting function in an imaginary part low extension frequency band according to imaginary part data corresponding to the lowest frequency and imaginary part data corresponding to the second lowest frequency, and obtaining an imaginary part dielectric response fitting function in an imaginary part high extension frequency band according to the imaginary part data corresponding to the highest frequency and the imaginary part data corresponding to the second highest frequency; the real part low-extension frequency band is located between the lowest frequency and the real part lowest extension frequency, the real part high-extension frequency band is located between the highest frequency and the real part highest extension frequency, the imaginary part low-extension frequency band is located between the lowest frequency and the imaginary part lowest extension frequency, and the imaginary part high-extension frequency band is located between the highest frequency and the imaginary part highest extension frequency;

a real part iteration unit for performing the following iterative process:

an imaginary part iteration unit, configured to perform the following iteration processing:

and the dielectric state unit is used for obtaining the dielectric state according to the conductance information, the real part information of the polarization process, the capacitance information and the imaginary part information of the polarization process.

Embodiments of the present invention further provide a computer device, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, and the processor implements the steps of the dielectric state analysis method when executing the computer program.

Embodiments of the present invention also provide a computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, implements the steps of the dielectric state analysis method.

The dielectric medium state analysis method, the system, the computer and the storage medium of the embodiment of the invention iteratively calculate the simulated imaginary part integral according to the real part interpolation step length until whether the simulated imaginary part integral is smaller than the preset resolution or not, and compare the simulated imaginary part integral with the actual imaginary part integral to obtain the conductance information and the real part information of the polarization process; and finally, obtaining the dielectric state according to the conductance information, the polarization process real part information, the capacitance information and the polarization process imaginary part information, and accurately analyzing and judging the dielectric state, so that misjudgment, missing judgment and misjudgment are avoided, and the cost of operating and maintaining the power equipment is saved.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.

FIG. 1 is a flow chart of a method of dielectric state analysis in an embodiment of the invention;

FIG. 2 is a flowchart of computing real singular point frequency band integrals according to an embodiment of the present invention;

FIG. 3 is a flow chart of the calculation of the imaginary singular point band integral in the embodiment of the present invention;

FIG. 4 is a schematic diagram of real part data in an embodiment of the invention;

FIG. 5 is a schematic diagram of imaginary data in a first embodiment of the invention;

FIG. 6 is a schematic diagram of imaginary data in a second embodiment of the present invention;

FIG. 7 is a comparative illustration of polarizability in an embodiment of the present invention;

FIG. 8 is a comparative schematic of polarizabilities in an embodiment of the present invention;

FIG. 9 is a schematic of the simulated real and imaginary integrals of the complex capacitance in an embodiment of the present invention;

FIG. 10 is a schematic diagram of polarization real part information and polarization imaginary part information of a complex capacitance in an embodiment of the present invention;

FIG. 11 is a schematic of conductance information and infinite frequency capacitance information for a complex capacitance in an embodiment of the present invention;

FIG. 12 is a graph illustrating the dielectric response of a high temperature vulcanized silicone rubber complex capacitor in accordance with an embodiment of the present invention;

FIG. 13 is a schematic diagram illustrating information on the polarization process of the high temperature vulcanized silicone rubber complex capacitor in an embodiment of the present invention;

FIG. 14 is a schematic diagram of conductance information and infinite frequency capacitance information of a high temperature vulcanized silicone rubber complex capacitor in an embodiment of the invention;

FIG. 15 is a graph showing a comparison of real part data of polarizability of a high temperature vulcanized silicone rubber complex capacitor in an embodiment of the present invention;

FIG. 16 is a graphical comparison of imaginary data for the polarizability of a high temperature vulcanized silicone rubber complex capacitor in accordance with an embodiment of the present invention;

fig. 17 is a block diagram of the structure of a dielectric state analysis system in the embodiment of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

As will be appreciated by one skilled in the art, embodiments of the present invention may be embodied as a system, apparatus, device, method, or computer program product. Accordingly, the present disclosure may be embodied in the form of: entirely hardware, entirely software (including firmware, resident software, micro-code, etc.), or a combination of hardware and software.

In view of the fact that the state of the dielectric medium \ the power equipment cannot be accurately judged in the prior art, inconvenience is brought to the state diagnosis of the power equipment of the power system, and misjudgment, missed judgment and wrong judgment are easily caused, embodiments of the present invention provide a dielectric medium state analysis method, so as to accurately analyze and judge the state of the dielectric medium, avoid causing the misjudgment, the missed judgment and the wrong judgment, and save the cost of operating and maintaining the power equipment. The present invention will be described in detail below with reference to the accompanying drawings.

Fig. 1 is a flowchart of a dielectric state analysis method in an embodiment of the present invention. As shown in fig. 1, the dielectric state analysis method includes:

s101: real and imaginary data of the dielectric response parameters corresponding to the plurality of frequencies are acquired.

The dielectric response parameter may be complex capacitance, dielectric constant, or polarizability, among others.

S102: and determining the lowest extension frequency of the real part and the lowest extension frequency of the imaginary part according to the lowest frequency, and determining the highest extension frequency of the real part and the highest extension frequency of the imaginary part according to the highest frequency.

S103: fitting real part data corresponding to a plurality of frequencies to obtain a real part dielectric response fitting function in a limited frequency band; and fitting imaginary part data corresponding to a plurality of frequencies to obtain an imaginary part dielectric response fitting function in a limited frequency band. Wherein the limited frequency band is located between the lowest frequency and the highest frequency.

S104: obtaining a real part dielectric response fitting function in a real part low-extension frequency band according to the real part data corresponding to the lowest frequency and the real part data corresponding to the second lowest frequency, and obtaining a real part dielectric response fitting function in a real part high-extension frequency band according to the real part data corresponding to the highest frequency and the real part data corresponding to the second highest frequency; obtaining an imaginary part dielectric response fitting function in an imaginary part low extension frequency band according to imaginary part data corresponding to the lowest frequency and imaginary part data corresponding to the second lowest frequency, and obtaining an imaginary part dielectric response fitting function in an imaginary part high extension frequency band according to the imaginary part data corresponding to the highest frequency and the imaginary part data corresponding to the second highest frequency; the real part low-extension frequency band is located between the lowest frequency and the real part lowest extension frequency, the real part high-extension frequency band is located between the highest frequency and the real part highest extension frequency, the imaginary part low-extension frequency band is located between the lowest frequency and the imaginary part lowest extension frequency, and the imaginary part high-extension frequency band is located between the highest frequency and the imaginary part highest extension frequency;

the following iterative process is performed:

s105: calculating an upper boundary of a singular point of a real part and a lower boundary of the singular point of the real part according to the singular point and the interpolation step length of the real part; wherein the singular point is located between the highest frequency and the lowest frequency.

S106: and calculating the simulated imaginary part integral according to the real part singular point upper boundary, the real part singular point lower boundary, the singular point, the real part minimum extension frequency, the real part maximum extension frequency, the real part dielectric response fitting function in the limited frequency band, the real part dielectric response fitting function in the real part low extension frequency band and the real part dielectric response fitting function in the real part high extension frequency band.

S107: and judging whether the analog imaginary part integral is smaller than a preset resolution.

S108: and when the real part of the electric conductance is smaller than the preset resolution, comparing the simulated imaginary part integral with the actual imaginary part integral to obtain the electric conductance information and the real part information of the polarization process.

In specific implementation, the same part in the simulated imaginary part integration and the actual imaginary part integration can be used as real part information of the polarization process, and the different part in the simulated imaginary part integration and the actual imaginary part integration can be used as conductance information.

S109: and when the real part interpolation step length is larger than or equal to the preset resolution, updating the real part interpolation step length.

In one embodiment, the real part interpolation step is updated by the following formula:

wherein, ln (Δ ω)_n) For the real interpolation step in the nth iteration, ln (Δ ω)_n+1) The real part interpolation step in the (n + 1) th iteration is carried out.

The following iterative process is performed:

s110: and calculating an imaginary singular point upper boundary and an imaginary singular point lower boundary according to the singular point and the imaginary interpolation step length.

S111: and calculating the simulated real part integral according to the imaginary part singular point upper boundary, the imaginary part singular point lower boundary, the singular point, the imaginary part minimum extension frequency, the imaginary part maximum extension frequency, the imaginary part dielectric response fitting function in the limited frequency band, the imaginary part dielectric response fitting function in the imaginary part low extension frequency band and the imaginary part dielectric response fitting function in the imaginary part high extension frequency band.

S112: and judging whether the analog real part integral is smaller than the preset resolution.

S113: and when the resolution is smaller than the preset resolution, comparing the analog real part integral with the actual real part integral to obtain capacitance information and polarization process imaginary part information.

In specific implementation, the same part of the analog real part integral and the actual real part integral can be used as the imaginary part information of the polarization process, and the different part of the analog real part integral and the actual real part integral can be used as the capacitance information.

S114: and when the resolution is larger than or equal to the preset resolution, updating the imaginary interpolation step length.

In one embodiment, the imaginary interpolation step is updated by the following equation:

wherein, ln (delta omega'_n) Is the imaginary interpolation step size in the nth iteration, ln (Δ ω'_n+1) For the imaginary interpolation step in the (n + 1) th iteration.

S115: and obtaining the dielectric state according to the conductance information, the real part information of the polarization process, the capacitance information and the imaginary part information of the polarization process.

The capacitance information is infinite frequency capacitance information.

The execution subject of the dielectric state analysis method shown in fig. 1 may be a computer. As can be seen from the process shown in fig. 1, the dielectric state analysis method according to the embodiment of the present invention iteratively calculates the simulated imaginary part integral according to the real part interpolation step length until whether the simulated imaginary part integral is smaller than the preset resolution, and compares the simulated imaginary part integral with the actual imaginary part integral to obtain the conductance information and the real part information of the polarization process; and finally, obtaining the dielectric state according to the conductance information, the polarization process real part information, the capacitance information and the polarization process imaginary part information, and accurately analyzing and judging the dielectric state, so that misjudgment, missing judgment and misjudgment are avoided, and the cost of operating and maintaining the power equipment is saved.

In one embodiment, S106 includes:

and calculating the frequency band integral of the real part singular point according to the real part data corresponding to the upper boundary of the real part singular point, the real part data corresponding to the singular point, the lower boundary of the real part singular point and the real part data corresponding to the lower boundary of the real part singular point.

And calculating the real part truncated frequency domain integral according to the real part data corresponding to the real part lowest extension frequency, the real part data corresponding to the real part highest extension frequency, the real part highest extension frequency and the singular point.

In specific implementation, the calculating the real part truncated frequency domain integral includes:

and calculating the integral of the truncated frequency domain on the real part according to the real part data corresponding to the highest extension frequency of the real part, the highest extension frequency of the real part and the singular point.

In one embodiment, the truncated frequency domain integral over the real part is calculated by the following equation:

wherein, F₁For the truncated frequency domain integral over the real part, χ' (ω)_Ext-H) Data of the real part corresponding to the highest epitaxial frequency of the real part, omega_SIs a singular point, ω_Ext-HThe highest extension frequency of the real part.

And calculating the truncation frequency domain integral under the real part according to the real part data corresponding to the lowest extension frequency of the real part, the lowest extension frequency of the real part and the singular point.

In one embodiment, the real down-truncated frequency domain integral is calculated by the following equation:

wherein, F₂Is the truncated frequency domain integral under the real part, χ' (ω)_Ext-L) For data of the real part corresponding to the lowest epitaxial frequency of the real part, omega_Ext-LThe lowest extensional frequency of the real part.

And adding the truncated frequency domain integral on the real part and the truncated frequency domain integral under the real part to obtain the truncated frequency domain integral of the real part.

And calculating the real part epitaxial frequency band integral according to the real part dielectric response fitting function in the limited frequency band, the real part dielectric response fitting function in the real part low-extension frequency band, the real part dielectric response fitting function in the real part high-extension frequency band, the real part minimum extension frequency, the real part maximum extension frequency, the real part singular point upper boundary and the real part singular point lower boundary.

And calculating and simulating imaginary part integration according to the real part singular point frequency band integration, the real part truncated frequency domain integration and the real part epitaxial frequency band integration.

FIG. 2 is a flowchart of calculating the frequency band integrals of the real singular points according to an embodiment of the present invention. As shown in fig. 2, calculating the real singular point band integral includes:

s201: and determining a first singular point real part coefficient, a second singular point real part coefficient, a third singular point real part coefficient and a fourth singular point real part coefficient according to the real part data corresponding to the real part singular point upper boundary, the singular point, the real part data corresponding to the singular point, the real part singular point lower boundary and the real part data corresponding to the real part singular point lower boundary.

In specific implementation, because the real part dielectric response fitting function in the real part low-extension frequency band and the real part dielectric response fitting function in the real part high-extension frequency band are linear functions, the real part coefficient of the first singular point and the real part coefficient of the second singular point can be determined according to the real part data corresponding to the real part singular point upper boundary and the real part upper boundary of the real part singular point, and the real part data corresponding to the singular point and the singular point; and determining a third singular point real part coefficient and a fourth singular point real part coefficient according to the real part data corresponding to the real part singular point lower bound and the singular point and the real part data corresponding to the singular point.

S202: and calculating the frequency band integral on the real part singular point according to the real part coefficient of the first singular point, the real part coefficient of the second singular point, the upper boundary of the real part singular point and the lower boundary of the real part singular point.

In one embodiment, the frequency band integral at the real singular point is calculated by the following formula:

wherein E is₁Is the frequency band integral on a real singular point, a is the real part coefficient of a first singular point, b is the real part coefficient of a second singular point, omega_SIs a singular point, ω_S-HIs the upper boundary, omega, of the singular point of the real part_S-LThe lower boundary of the real part singular point.

S203: and calculating the frequency band integral under the real part singular point according to the real part coefficient of the third singular point, the real part coefficient of the fourth singular point, the upper boundary of the real part singular point and the lower boundary of the real part singular point.

In one embodiment, the frequency band integral under the singular point of the real part is calculated by the following formula:

wherein E is₂And f, frequency band integral under a real singular point, c is a real part coefficient of a third singular point, and d is a real part coefficient of a fourth singular point.

S204: and adding the frequency band integral at the real part singular point and the frequency band integral at the real part singular point to obtain the real part singular point frequency band integral.

In one embodiment, S111 includes:

and calculating imaginary part singular point frequency band integrals according to imaginary part data corresponding to the imaginary part singular point upper boundary and the imaginary part singular point upper boundary, the singular points, imaginary part data corresponding to the singular points, imaginary part singular point lower boundary and imaginary part data corresponding to the imaginary part singular point lower boundary.

And calculating the imaginary part extension frequency band integral according to the imaginary part dielectric response fitting function in the finite frequency band, the imaginary part dielectric response fitting function in the imaginary part low extension frequency band, the imaginary part dielectric response fitting function in the imaginary part high extension frequency band, the imaginary part minimum extension frequency, the imaginary part maximum extension frequency, the imaginary part singular point upper boundary and the imaginary part singular point lower boundary.

And calculating the simulated real part integral according to the imaginary part singular point frequency band integral and the imaginary part epitaxial frequency band integral.

Fig. 3 is a flowchart of calculating the imaginary singular point frequency band integral according to the embodiment of the present invention. As shown in fig. 3, calculating the imaginary singular point band integral includes:

s301: and determining a first singular point imaginary part coefficient, a second singular point imaginary part coefficient, a third singular point imaginary part coefficient and a fourth singular point imaginary part coefficient according to the imaginary part data corresponding to the imaginary part singular point upper boundary and the imaginary part singular point upper boundary, the singular point, the imaginary part data corresponding to the imaginary part singular point lower boundary and the imaginary part data corresponding to the imaginary part singular point lower boundary.

In specific implementation, because the imaginary part dielectric response fitting function in the imaginary part low-extension frequency band and the imaginary part dielectric response fitting function in the imaginary part high-extension frequency band are linear functions, the imaginary part coefficient of the first singular point and the imaginary part coefficient of the second singular point can be determined according to imaginary part data corresponding to the imaginary part singular point upper bound and the imaginary part singular point upper bound, and imaginary part data corresponding to the singular point and the singular point; and determining a third singular point imaginary part coefficient and a fourth singular point imaginary part coefficient according to the imaginary part data corresponding to the imaginary part singular point lower boundary and the imaginary part singular point lower boundary, and the imaginary part data corresponding to the singular point and the singular point.

S302: and calculating the frequency band integral of the imaginary part singular point according to the imaginary part coefficient of the first singular point, the imaginary part coefficient of the second singular point, the imaginary part singular point upper boundary and the imaginary part singular point lower boundary.

In one embodiment, the frequency band integral over the imaginary singular point is calculated by the following equation:

wherein, E'₁Is the frequency band integral on the imaginary singular point, a ' is the first singular point imaginary part coefficient, b ' is the second singular point imaginary part coefficient, omega '_S-HIs imaginary singular point upper bound, ω'_S-LThe imaginary singular point lower bound.

S303: and calculating the frequency band integral under the imaginary part singular point according to the imaginary part coefficient of the third singular point, the imaginary part coefficient of the fourth singular point, the imaginary part singular point upper boundary and the imaginary part singular point lower boundary.

In one embodiment, the frequency band integral under the imaginary singular point is calculated by the following formula:

wherein, E'₂And c ' is frequency band integral under the imaginary part singular point, c ' is a third singular point imaginary part coefficient, and d ' is a fourth singular point imaginary part coefficient.

S304: and adding the frequency band integral of the imaginary part singular point and the frequency band integral of the imaginary part singular point to obtain the imaginary part singular point frequency band integral.

FIG. 4 is a schematic diagram of real part data in an embodiment of the present invention. Fig. 5 is a schematic diagram of imaginary data in the first embodiment of the present invention. Fig. 6 is a schematic diagram of imaginary data in a second embodiment of the present invention. The abscissa of fig. 4 to 6 is the logarithm of the frequency (log (frequency)), and the ordinate is the logarithm of the complex capacitance/dielectric constant/polarizability (dielectric response parameter) (log (complex capacitance/dielectric constant/polarizability)). As shown in fig. 4-6, the specific embodiment of the present invention is as follows:

1. real and imaginary data of the dielectric response parameters corresponding to the plurality of frequencies are acquired. And determining the lowest extension frequency of the real part and the lowest extension frequency of the imaginary part according to the lowest frequency, and determining the highest extension frequency of the real part and the highest extension frequency of the imaginary part according to the highest frequency.

As shown in FIG. 4, the actually measured dielectric response frequency band (finite frequency band) is [ ω [ ]_L,ω_H]。ω_LIs the lowest frequency，ω_HThe highest frequency. Extending the data by 2-3 orders of magnitude, namely extending the lowest frequency to the lowest extension frequency omega of a real part_Ext-LI.e. omega_Ext-L＝10^-2×ω_LOr ω_Ext-L＝10^-3×ω_L(ii) a Extending the highest frequency to the real part highest extension frequency omega_Ext-HI.e. omega_Ext-H＝10^-2×ω_HOr ω_Ext-H＝10^-3×ω_H。

As shown in FIGS. 5-6, the actually measured dielectric response frequency band (limited frequency band) is [ omega ]_L,ω_H]。ω_LAt the lowest frequency, ω_HThe highest frequency. Extending data by 2-3 orders of magnitude, namely extending the lowest frequency to the lowest extension frequency omega of an imaginary part'_Ext-LI.e. ω'_Ext-L＝10^-2×ω_LOr ω'_Ext-L＝10^-3×ω_L(ii) a Extending the highest frequency to the imaginary part highest extension frequency omega'_Ext-HI.e. ω'_Ext-H＝10^-2×ω_HOr ω'_Ext-H＝10^-3×ω_H。

2. Fitting real part data corresponding to a plurality of frequencies to obtain a real part dielectric response fitting function in a limited frequency band; and fitting imaginary part data corresponding to a plurality of frequencies to obtain an imaginary part dielectric response fitting function in a limited frequency band. Wherein the limited frequency band is located between the lowest frequency and the highest frequency. The real part dielectric response fitting function and the imaginary part dielectric response fitting function are both quadratic functions.

3. As shown in fig. 4, a real dielectric response fitting function in a real low-extension frequency band can be obtained according to real data corresponding to the lowest frequency and real data corresponding to the second lowest frequency, and a real dielectric response fitting function in a real high-extension frequency band can be obtained according to real data corresponding to the highest frequency and real data corresponding to the second highest frequency.

And the real part dielectric response fitting function in the real part low-extension frequency band and the real part dielectric response fitting function in the real part high-extension frequency band are linear functions. Real low epitaxial frequency band [ omega ]_Ext-L,ω_L]At the lowest frequency (omega)_L) Lowest epitaxial frequency (ω) with real part_Ext-L) Middle, high-extension frequency band [ omega ] of real part_H,ω_Ext-H]At the highest frequency (ω)_H) With the highest epitaxial frequency (ω) of the real part_Ext-H) In the meantime. In [ omega ]_Ext-L,ω_Ext-H]And (4) performing assignment by adopting a truncation processing method for the frequency bands except the frequency bands. I.e. below omega_Ext-LThe real data are assigned as χ' (ω)_Ext-L) Above ω_Ext-HThe real data are assigned as χ' (ω)_Ext-H)。

Fig. 5 is a schematic diagram of imaginary data when the characteristic frequency is not in the extension frequency band (the imaginary part low extension frequency band and the imaginary part high extension frequency band), and fig. 6 is a schematic diagram of imaginary data when the characteristic frequency is in the extension frequency band (the imaginary part low extension frequency band and the imaginary part high extension frequency band).

As shown in fig. 5 or fig. 6, the imaginary part dielectric response fitting function in the imaginary part low-extension frequency band may be obtained according to the imaginary part data corresponding to the lowest frequency and the imaginary part data corresponding to the second lowest frequency, and the imaginary part dielectric response fitting function in the imaginary part high-extension frequency band may be obtained according to the imaginary part data corresponding to the highest frequency and the imaginary part data corresponding to the second highest frequency.

As shown in fig. 5-6, both the imaginary dielectric response fitting function in the imaginary low-epi frequency band and the imaginary dielectric response fitting function in the imaginary high-epi frequency band are linear functions. Imaginary part low epitaxial frequency range [ omega'_Ext-L,ω_L]At the lowest frequency (omega)_L) With lowest epitaxial frequency (ω 'of imaginary part'_Ext-L) Middle, imaginary high-extension frequency band [ omega ]_H,ω'_Ext-H]At the highest frequency (ω)_H) And the imaginary part highest epitaxial frequency (ω'_Ext-H) In the meantime. In [ omega'_Ext-L,ω'_Ext-H]And (4) performing assignment by adopting a truncation processing method for the frequency bands except the frequency bands. I.e. below omega_Ext-LFrequency band sum above omega_Ext-HAnd the imaginary part data are all assigned to be 0.

4. According to the singular point omega_SCalculating real part singular point upper bound omega by using real part interpolation step length_S-HAnd real part singular point lower bound omega_S-L(ii) a Wherein, the singular point ω_SAt the highest frequency omega_HWith the lowest frequency omega_LIn the meantime.

In one embodiment, the relationship between the real singular point upper bound and the singular point is as follows:

ln(ω_S-H)＝ln(ω_S)+ln(Δω)；

the relation between the lower boundary of the real part singular point and the singular point is as follows:

ln(ω_S-L)＝ln(ω_S)-ln(Δω)；

where ln (Δ ω) is the real part interpolation step.

5. Determining a first singular point real part coefficient and a second singular point real part coefficient according to the real part data corresponding to the real part singular point upper bound and the real part upper bound of the real part singular point, and the singular point and the real part data corresponding to the singular point; and determining a third singular point real part coefficient and a fourth singular point real part coefficient according to the real part data corresponding to the real part singular point lower bound and the singular point and the real part data corresponding to the singular point.

6. And calculating the frequency band integral on the real part singular point according to the real part coefficient of the first singular point, the real part coefficient of the second singular point, the upper boundary of the real part singular point and the lower boundary of the real part singular point. Wherein, the frequency band integration on the singular point of the real part is the frequency band [ omega ] on the singular point of the real part_S,ω_S-H]Is calculated.

7. And calculating the frequency band integral under the real part singular point according to the real part coefficient of the third singular point, the real part coefficient of the fourth singular point, the upper boundary of the real part singular point and the lower boundary of the real part singular point. Wherein, the frequency band integration under the real part singular point is the frequency band [ omega ] under the real part singular point_S-L,ω_S]Is calculated.

8. And adding the frequency band integral at the real part singular point and the frequency band integral at the real part singular point to obtain the real part singular point frequency band integral.

9. Calculating the integral of the truncated frequency domain on the real part according to the real part data corresponding to the highest extension frequency of the real part, the highest extension frequency of the real part and the singular point; and calculating the truncation frequency domain integral under the real part according to the real part data corresponding to the lowest extension frequency of the real part, the lowest extension frequency of the real part and the singular point. And adding the truncated frequency domain integral on the real part and the truncated frequency domain integral under the real part to obtain the truncated frequency domain integral of the real part.

Wherein the integration of the truncated frequency domain in the real part is the truncated frequency domain (0, ω) in the real part_Ext-L) Integral of (1); the integral of the real part lower truncated frequency domain is the real part lower truncated frequency domain (omega)_Ext-HAnd ∞) of the measured values.

10. And calculating the real part epitaxial frequency band integral according to the real part dielectric response fitting function in the limited frequency band, the real part dielectric response fitting function in the real part low-extension frequency band, the real part dielectric response fitting function in the real part high-extension frequency band, the real part minimum extension frequency, the real part maximum extension frequency, the real part singular point upper boundary and the real part singular point lower boundary.

In practice, because the limited frequency band [ omega ] is already determined_L,ω_H]Inner real part dielectric response fitting function, real part low extension frequency band [ omega ]_Ext-L,ω_L]Inner real part dielectric response fitting function and real part high extension frequency band [ omega ]_H,ω_Ext-H]The dielectric response of the inner real part is fitted with a function, so that the real part epitaxial frequency band [ omega ] can be calculated according to the Simpson formula_Ext-L,ω_S-L) Is calculated.

11. And calculating and simulating imaginary part integration according to the real part singular point frequency band integration, the real part truncated frequency domain integration and the real part epitaxial frequency band integration.

And adding the real part singular point frequency band integral, the real part truncated frequency domain integral and the real part extension frequency band integral to obtain the simulated imaginary part integral.

12. And judging whether the analog imaginary part integral is smaller than a preset resolution. When the resolution is larger than or equal to the preset resolution, updating the real part interpolation step length, and returning to execute the step 4 again; and when the real part is smaller than the preset resolution, using the same part in the simulated imaginary part integral and the actual imaginary part integral as real part information of the polarization process, and using different parts in the simulated imaginary part integral and the actual imaginary part integral as conductance information.

13. According to the singular point omega_SAnd calculating an imaginary part singular point upper boundary omega 'by using the imaginary part interpolation step length'_S-HAnd imaginary-part singular-point lower boundary ω'_S-L。

In one embodiment, the relationship between the imaginary singular point upper bound and the singular point is as follows:

ln(ω'_S-H)＝ln(ω_S)+ln(Δω')；

the relationship between the lower bound of imaginary singular points and the singular points is as follows:

ln(ω'_S-L)＝ln(ω_S)-ln(Δω')；

where ln (Δ ω') is the imaginary interpolation step.

14. Determining a first singular point imaginary part coefficient and a second singular point imaginary part coefficient according to imaginary part data corresponding to the imaginary part singular point upper bound and imaginary part data corresponding to the singular point and the singular point; and determining a third singular point imaginary part coefficient and a fourth singular point imaginary part coefficient according to the imaginary part data corresponding to the imaginary part singular point lower boundary and the imaginary part singular point lower boundary, and the imaginary part data corresponding to the singular point and the singular point.

15. And calculating the frequency band integral of the imaginary part singular point according to the imaginary part coefficient of the first singular point, the imaginary part coefficient of the second singular point, the imaginary part singular point upper boundary and the imaginary part singular point lower boundary. Wherein, the frequency band integral on the imaginary singular point is the frequency band [ omega ] on the imaginary singular point_S,ω'_S-H]Is calculated.

16. And calculating the frequency band integral under the imaginary part singular point according to the imaginary part coefficient of the third singular point, the imaginary part coefficient of the fourth singular point, the imaginary part singular point upper boundary and the imaginary part singular point lower boundary. Wherein, the frequency band integral under the imaginary singular point is the frequency band [ omega ] under the imaginary singular point'_S-L,ω_S]Is calculated.

17. And adding the frequency band integral of the imaginary part singular point and the frequency band integral of the imaginary part singular point to obtain the imaginary part singular point frequency band integral.

18. And calculating the imaginary part extension frequency band integral according to the imaginary part dielectric response fitting function in the finite frequency band, the imaginary part dielectric response fitting function in the imaginary part low extension frequency band, the imaginary part dielectric response fitting function in the imaginary part high extension frequency band, the imaginary part minimum extension frequency, the imaginary part maximum extension frequency, the imaginary part singular point upper boundary and the imaginary part singular point lower boundary.

19. And calculating the simulated real part integral according to the imaginary part singular point frequency band integral and the imaginary part epitaxial frequency band integral.

And adding the imaginary part singular point frequency band integral and the imaginary part extension frequency band integral to obtain the analog real part integral.

20. And judging whether the analog real part integral is smaller than the preset resolution. And when the resolution is greater than or equal to the preset resolution, updating the imaginary interpolation step size, and returning to execute the step 13 again. And when the resolution is smaller than the preset resolution, using the same part in the analog real part integral and the actual real part integral as imaginary part information in the polarization process, and using different parts in the analog real part integral and the actual real part integral as capacitance information.

21. And obtaining the dielectric state according to the conductance information, the real part information of the polarization process, the capacitance information and the imaginary part information of the polarization process.

FIG. 7 is a comparative illustration of polarizabilities in an embodiment of the present invention. As shown in fig. 7, the abscissa is frequency in Hz; the ordinate is the polarizability. χ' (ω) is the actual imaginary integral of the polarizability, and χ "(ω) is the simulated imaginary integral of the polarizability. To more clearly show the simulated imaginary integral of the calculated polarizabilities, χ "(ω) was shifted vertically downward by two orders of magnitude. As can be seen from fig. 7, the actual imaginary integral of the polarizability coincides with the simulated imaginary integral of the polarizability.

FIG. 8 is a comparative illustration of polarizabilities in an embodiment of the present invention. As shown in fig. 8, the abscissa is frequency in Hz; the ordinate is the polarizability. χ' (ω) is the actual real integral of the polarizability, and χ "(ω) is the simulated real integral of the polarizability. To more clearly show the simulated real integral of the calculated polarizability, χ "(ω) is shifted vertically downward by two orders of magnitude. As can be seen from fig. 8, the actual real integral of the polarizability coincides with the simulated real integral of the polarizability.

Fig. 9 is a schematic diagram of the simulated real part integration and the simulated imaginary part integration of the complex capacitance in an embodiment of the invention. Fig. 10 is a schematic diagram of polarization process real part information and polarization process imaginary part information of complex capacitance in the embodiment of the present invention. Fig. 11 is a schematic diagram of conductance information and infinite frequency capacitance information of a complex capacitance in an embodiment of the present invention. The abscissas of fig. 9-11 are frequency, in Hz; the ordinate is the capacitance in pF. In FIG. 9, C' (ω) is the analog real part integral of the complex capacitance, and C "(ω) is the complex capacitanceAnalog imaginary part integration of the capacitor; χ in fig. 10₁' (omega) is the information of the real part of the polarization process of the complex capacitance, chi₁"(ω) is the polarization process imaginary information of the complex capacitance; σ in fig. 11 is conductance information of the complex capacitance, and C ∞ is infinite frequency capacitance information of the complex capacitance.

The invention can be applied to dielectric response analysis of various power equipment, and the application mode of the invention is described in detail below by taking the most common high-temperature vulcanized silicone rubber in the field of external insulation of power systems as an example.

The main components of the high-temperature vulcanized silicone rubber are polydimethylsiloxane, nano white carbon black filler and nano aluminum hydroxide filler, the test temperature is 80 ℃, and the measurement frequency range is 10^-4Hz～10³Hz。

FIG. 12 is a schematic diagram of the dielectric response parameters of the high temperature vulcanized silicone rubber complex capacitor in an embodiment of the invention. FIG. 13 is a schematic diagram of information on the polarization process of the high-temperature vulcanized silicone rubber complex capacitor in the embodiment of the invention. FIG. 14 is a schematic diagram of conductance information and infinite frequency capacitance information of a high temperature vulcanized silicone rubber complex capacitor in an embodiment of the invention. FIG. 15 is a graph showing a comparison of real part data of the polarizability of a high temperature vulcanized silicone rubber complex capacitor in an embodiment of the present invention. FIG. 16 is a graphical comparison of imaginary data for the polarizability of a high temperature vulcanized silicone rubber complex capacitor in accordance with an embodiment of the present invention. The abscissas of fig. 12-16 are for frequency, in Hz; the ordinate is the capacitance in pF.

As shown in fig. 12, C' (ω) in fig. 12 is an actual real part integral of the dielectric response parameter of the complex capacitance, and C "(ω) is an actual imaginary part integral of the dielectric response parameter of the complex capacitance. Intuitively, the actual real part integral remains substantially constant in the measured frequency band, and the actual imaginary part integral is at 10⁰Hz～10³There is a clear relaxation peak in the Hz frequency band, at 10^-4Hz～10⁰The Hz band has a significant conductance process (i.e., the imaginary part is raised to the power of-1 with respect to frequency).

As shown in fig. 13, χ in fig. 13₁' (omega) is the information of the real part of the polarization process of the complex capacitance, chi₁"(ω) is the polarization process imaginary information of the complex capacitance. Information on the real part of the polarization process is 10^-4Hz～10^-2Hz frequency band and 10¹Hz～10³Obvious dispersion phenomena exist in the Hz frequency band, and correspondingly, dispersion phenomena also exist in the imaginary part information of the polarization process on the two frequency bands. More specifically, the value of the real part information of the polarization process and the value of the imaginary part information of the polarization process are at 10^-4Hz～10^-2The Hz band increases with decreasing frequency, which is characteristic of the typical low frequency dispersion process. At 10¹Hz～10³In the Hz frequency band, relaxation peak appears in the imaginary part information of the polarization process, and is 10²Hz～10³In the Hz frequency band, the parallel phenomenon of the numerical value of the real part information in the polarization process and the numerical value of the imaginary part information in the polarization process in a double-index coordinate can be observed, namely, the universal exponential law of the polarization rate is observed.

As shown in fig. 14, σ in fig. 14 is conductance information of the complex capacitance, and C ∞ is infinite frequency capacitance information of the complex capacitance.

As shown in FIG. 15, C' (ω) in FIG. 15 is the actual real part integral, χ, of the dielectric response parameter of the complex capacitance₁' (ω) is information on the real part of the polarization process of the complex capacitance. In the actual real part integral of the dielectric response parameter of the complex capacitance, since the value of the infinite frequency capacitance information is large (as shown in fig. 14), the dispersion process of the real part information of the polarization process is almost completely covered by the infinite frequency capacitance, which results in that the dispersion phenomenon is hardly observed in the actual real part integral of the dielectric response parameter of the complex capacitance. If only the actual real part integral of the dielectric response parameter of the complex capacitor is analyzed, the high-temperature vulcanized silicone rubber is mistakenly judged not to have a dielectric dispersion process in the measured frequency band, and as can be seen from fig. 15, the judgment is obviously inconsistent with the actual physical substance.

As shown in FIG. 16, C "(ω) in FIG. 16 is the actual imaginary integral, χ, of the dielectric response parameter of the complex capacitance₁"(ω) is the simulated imaginary integral of the dielectric response parameter for polarizability. It can be found that in the high frequency band (10)¹Hz～10³Hz frequency band), the actual imaginary integral is consistent with the simulated imaginary integral (taking into account the shape factor). And at 10⁰For frequency bands below Hz, the actual imaginary integral is significantly larger than the simulated imaginary integral (consider shape)Form factor), the difference between the two is conductance information. Fig. 16 clearly shows that the conductance information mainly affects the measurement results at low frequencies of the imaginary part of the complex capacitance. If only the actual imaginary part integral of the dielectric response parameter of the complex capacitance is analyzed, it is mistaken that the imaginary part of the complex capacitance is determined only by the conductance process in the low frequency band, and as can be seen from fig. 16, this determination is also clearly inconsistent with the actual physical essence. The actual imaginary part integral of the high-temperature vulcanized silicone rubber complex capacitor not only has contribution of a conductance process, but also has contribution of a low-frequency dispersion process, the contribution of the actual imaginary part integral of the complex capacitor in a polarization process of a low-frequency band is covered by the conductance process, and the low-frequency dispersion phenomenon in the silicone rubber dielectric response can be observed only through analysis of a polarization rate imaginary part.

In summary, the dielectric state analysis method according to the embodiment of the present invention iteratively calculates the simulated imaginary part integral according to the real part interpolation step length until whether the simulated imaginary part integral is smaller than the preset resolution, and compares the simulated imaginary part integral with the actual imaginary part integral to obtain the conductance information and the real part information of the polarization process; and finally, obtaining the dielectric state according to the conductance information, the polarization process real part information, the capacitance information and the polarization process imaginary part information, and accurately analyzing and judging the dielectric state, so that misjudgment, missing judgment and misjudgment are avoided, and the cost of operating and maintaining the power equipment is saved.

Based on the same inventive concept, the embodiment of the invention also provides a dielectric state analysis system, and as the principle of solving the problems of the system is similar to that of the dielectric state analysis method, the implementation of the system can refer to the implementation of the method, and repeated parts are not repeated.

Fig. 17 is a block diagram of the structure of a dielectric state analysis system in the embodiment of the present invention. As shown in fig. 17, the dielectric state analysis system includes:

a real part iteration unit for performing the following iterative process:

In one embodiment, the real iteration unit is specifically configured to:

calculating real part singular point frequency band integrals according to real part data corresponding to the real part singular point upper bound and the real part upper bound of the real part singular point, singular points, real part data corresponding to the singular points, the real part singular point lower bound and the real part data corresponding to the real part singular point lower bound;

calculating a real part truncated frequency domain integral according to the real part data corresponding to the real part lowest extension frequency, the real part data corresponding to the real part highest extension frequency, the real part highest extension frequency and the singular point;

calculating the real part epitaxial frequency band integral according to a real part dielectric response fitting function in a limited frequency band, a real part dielectric response fitting function in a real part low-extension frequency band, a real part dielectric response fitting function in a real part high-extension frequency band, a real part minimum extension frequency, a real part maximum extension frequency, a real part singular point upper boundary and a real part singular point lower boundary;

calculating and simulating imaginary part integration according to the real part singular point frequency band integration, the real part truncated frequency domain integration and the real part epitaxial frequency band integration;

the imaginary part iteration unit is specifically configured to:

calculating imaginary part singular point frequency band integrals according to imaginary part data corresponding to the imaginary part singular point upper boundary and the imaginary part singular point upper boundary, the singular points, imaginary part data corresponding to the singular points, imaginary part singular point lower boundary and imaginary part data corresponding to the imaginary part singular point lower boundary;

calculating imaginary part extension frequency band integrals according to an imaginary part dielectric response fitting function in a limited frequency band, an imaginary part dielectric response fitting function in an imaginary part low extension frequency band, an imaginary part dielectric response fitting function in an imaginary part high extension frequency band, an imaginary part minimum extension frequency, an imaginary part maximum extension frequency, an imaginary part singular point upper boundary and an imaginary part singular point lower boundary;

In one embodiment, the real iteration unit is specifically configured to:

determining a first singular point real part coefficient, a second singular point real part coefficient, a third singular point real part coefficient and a fourth singular point real part coefficient according to the real part data corresponding to the real part singular point upper boundary, the singular point, the real part data corresponding to the singular point, the real part singular point lower boundary and the real part data corresponding to the real part singular point lower boundary;

calculating frequency band integrals on the real part singular points according to the real part coefficient of the first singular point, the real part coefficient of the second singular point, the singular points, the upper boundary of the real part singular points and the lower boundary of the real part singular points;

calculating frequency band integrals under the real part singular points according to the real part coefficient of the third singular point, the real part coefficient of the fourth singular point, the upper boundary of the real part singular point and the lower boundary of the real part singular point;

adding the frequency band integral at the real part singular point and the frequency band integral at the real part singular point to obtain the real part singular point frequency band integral;

the imaginary part iteration unit is specifically configured to:

determining a first singular point imaginary part coefficient, a second singular point imaginary part coefficient, a third singular point imaginary part coefficient and a fourth singular point imaginary part coefficient according to imaginary part data corresponding to the imaginary part singular point upper boundary and the imaginary part singular point upper boundary, the singular point, imaginary part data corresponding to the imaginary part singular point lower boundary and imaginary part data corresponding to the imaginary part singular point lower boundary;

calculating frequency band integrals on the imaginary part singular points according to the imaginary part coefficients of the first singular points, the imaginary part coefficients of the second singular points, the imaginary part singular point upper bound and the imaginary part singular point lower bound;

calculating frequency band integrals under imaginary part singular points according to the imaginary part coefficients of the third singular point, the imaginary part coefficients of the fourth singular point, the singular points, the imaginary part singular point upper bound and the imaginary part singular point lower bound;

and adding the frequency band integral of the imaginary part singular point and the frequency band integral of the imaginary part singular point to obtain the imaginary part singular point frequency band integral.

In one embodiment, the frequency band integral over the real singular point is calculated by the following formula:

wherein E is₁Is the frequency band integral on a real singular point, a is the real part coefficient of a first singular point, b is the real part coefficient of a second singular point, omega_SIs a singular point, ω_S-HIs the upper boundary, omega, of the singular point of the real part_S-LA real part singular point lower bound;

calculating the frequency band integral under the singular point of the real part by the following formula:

wherein E is₂Is the frequency band integral under the singular point of the real part, and c is the real part system of the third singular pointD is a real part coefficient of a fourth singular point;

the frequency band integral over the imaginary singular point is calculated by the following formula:

wherein, E'₁Is the frequency band integral on the imaginary singular point, a ' is the first singular point imaginary part coefficient, b ' is the second singular point imaginary part coefficient, omega '_S-HIs imaginary singular point upper bound, ω'_S-LIs the imaginary singular point lower bound;

calculating the frequency band integral under the imaginary singular point by the following formula:

In one embodiment, the real iteration unit is specifically configured to:

calculating the integral of the truncated frequency domain on the real part according to the real part data corresponding to the highest extension frequency of the real part, the highest extension frequency of the real part and the singular point;

calculating truncation frequency domain integrals under the real part according to the real part data corresponding to the lowest extension frequency of the real part, the lowest extension frequency of the real part and the singular point;

wherein, F₁For the truncated frequency domain integral over the real part, χ' (ω)_Ext-H) For the real part corresponding to the highest extension frequencyPartial data, ω_SIs a singular point, ω_Ext-HThe highest extension frequency of the real part;

the real lower truncated frequency domain integral is calculated by the following formula:

In one embodiment, the real interpolation step is updated by the following equation:

wherein, ln (Δ ω)_n) For the real interpolation step in the nth iteration, ln (Δ ω)_n+1) The real part interpolation step length in the (n + 1) th iteration is obtained;

the imaginary interpolation step is updated by the following formula:

In one embodiment, the real iteration unit is specifically configured to:

the same part in the simulated imaginary part integral and the actual imaginary part integral is used as real part information of the polarization process, and the different part in the simulated imaginary part integral and the actual imaginary part integral is used as conductance information;

the imaginary part iteration unit is specifically configured to:

and taking the same part in the analog real part integral and the actual real part integral as imaginary part information of the polarization process, and taking different parts in the analog real part integral and the actual real part integral as capacitance information.

In summary, the dielectric state analysis system according to the embodiment of the present invention iteratively calculates the simulated imaginary part integral according to the real part interpolation step length until whether the simulated imaginary part integral is smaller than the preset resolution, and compares the simulated imaginary part integral with the actual imaginary part integral to obtain the conductance information and the real part information of the polarization process; and finally, obtaining the dielectric state according to the conductance information, the polarization process real part information, the capacitance information and the polarization process imaginary part information, and accurately analyzing and judging the dielectric state, so that misjudgment, missing judgment and misjudgment are avoided, and the cost of operating and maintaining the power equipment is saved.

An embodiment of the present invention further provides a computer device, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, where the processor executes the computer program to implement all or part of the contents of the dielectric state analysis method, for example, when the processor executes the computer program, the following contents may be implemented:

the following iterative process is performed:

To sum up, the computer device of the embodiment of the present invention iteratively calculates the simulated imaginary part integral according to the real part interpolation step length until whether the simulated imaginary part integral is smaller than the preset resolution, and compares the simulated imaginary part integral with the actual imaginary part integral to obtain the conductance information and the real part information of the polarization process; and finally, obtaining the dielectric state according to the conductance information, the polarization process real part information, the capacitance information and the polarization process imaginary part information, and accurately analyzing and judging the dielectric state, so that misjudgment, missing judgment and misjudgment are avoided, and the cost of operating and maintaining the power equipment is saved.

Embodiments of the present invention also provide a computer-readable storage medium, on which a computer program is stored, where the computer program, when executed by a processor, may implement all or part of the contents of the dielectric state analysis method, for example, when the processor executes the computer program, the following contents may be implemented:

the following iterative process is performed:

In summary, the computer-readable storage medium according to the embodiment of the present invention iteratively calculates the simulated imaginary part integral according to the real part interpolation step length until whether the simulated imaginary part integral is smaller than the preset resolution, and compares the simulated imaginary part integral with the actual imaginary part integral to obtain the conductance information and the real part information of the polarization process; and finally, obtaining the dielectric state according to the conductance information, the polarization process real part information, the capacitance information and the polarization process imaginary part information, and accurately analyzing and judging the dielectric state, so that misjudgment, missing judgment and misjudgment are avoided, and the cost of operating and maintaining the power equipment is saved.

The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.

As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, system, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.

The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.

These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.

These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.

The principle and the implementation mode of the invention are explained by applying specific embodiments in the invention, and the description of the embodiments is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.

Claims

1. A dielectric state analysis method, comprising:

fitting the real part data corresponding to the multiple frequencies to obtain a real part dielectric response fitting function in a limited frequency band; fitting imaginary part data corresponding to the multiple frequencies to obtain an imaginary part dielectric response fitting function in a limited frequency band; the limited frequency band is located between the lowest frequency and the highest frequency;

obtaining a real part dielectric response fitting function in a real part low-extension frequency band according to the real part data corresponding to the lowest frequency and the real part data corresponding to the second lowest frequency, and obtaining a real part dielectric response fitting function in a real part high-extension frequency band according to the real part data corresponding to the highest frequency and the real part data corresponding to the second highest frequency; obtaining an imaginary part dielectric response fitting function in an imaginary part low extension frequency band according to the imaginary part data corresponding to the lowest frequency and the imaginary part data corresponding to the second lowest frequency, and obtaining an imaginary part dielectric response fitting function in an imaginary part high extension frequency band according to the imaginary part data corresponding to the highest frequency and the imaginary part data corresponding to the second highest frequency; the real part low-extension frequency band is located between the lowest frequency and the real part lowest extension frequency, the real part high-extension frequency band is located between the highest frequency and the real part highest extension frequency, the imaginary part low-extension frequency band is located between the lowest frequency and the imaginary part lowest extension frequency, and the imaginary part high-extension frequency band is located between the highest frequency and the imaginary part highest extension frequency;

the following iterative process is performed:

calculating a simulated imaginary part integral according to the real part singular point upper boundary, the real part singular point lower boundary, the singular point, the real part minimum extension frequency, the real part maximum extension frequency, a real part dielectric response fitting function in the finite frequency band, a real part dielectric response fitting function in the real part low extension frequency band and a real part dielectric response fitting function in the real part high extension frequency band;

judging whether the analog imaginary part integral is smaller than a preset resolution; when the real part interpolation step length is smaller than the preset resolution, comparing the simulated imaginary part integral with the actual imaginary part integral to obtain conductance information and real part information of a polarization process, and otherwise, updating the real part interpolation step length;

the following iterative process is performed:

calculating a simulated real part integral according to the imaginary part singular point upper bound, the imaginary part singular point lower bound, the singular point, the imaginary part lowest extension frequency, the imaginary part highest extension frequency, an imaginary part dielectric response fitting function in the finite frequency band, an imaginary part dielectric response fitting function in the imaginary part low extension frequency band and an imaginary part dielectric response fitting function in the imaginary part high extension frequency band;

judging whether the integral of the analog real part is smaller than a preset resolution; when the resolution is smaller than the preset resolution, comparing the simulated real part integral with the actual real part integral to obtain capacitance information and imaginary part information in a polarization process, and otherwise, updating the imaginary part interpolation step length;

obtaining a dielectric state from the conductance information, the real part of the polarization process information, the capacitance information, and the imaginary part of the polarization process information;

calculating the analog imaginary part integral includes:

calculating real part singular point frequency band integrals according to the real part data corresponding to the real part singular point upper boundary and the real part singular point upper boundary, the real part data corresponding to the singular points and the singular points, and the real part data corresponding to the real part singular point lower boundary and the real part singular point lower boundary;

calculating real part epitaxial frequency band integrals according to a real part dielectric response fitting function in the finite frequency band, a real part dielectric response fitting function in the real part low-epitaxial frequency band, a real part dielectric response fitting function in the real part high-epitaxial frequency band, the real part minimum epitaxial frequency, the real part maximum epitaxial frequency, the real part singular point upper boundary and the real part singular point lower boundary;

calculating a simulated imaginary part integral according to the real part singular point frequency band integral, the real part truncated frequency domain integral and the real part epitaxial frequency band integral;

calculating the analog real part integral includes:

calculating imaginary part singular point frequency band integrals according to imaginary part data corresponding to the imaginary part singular point upper bound and the imaginary part singular point upper bound, imaginary part data corresponding to the singular points and the singular points, and imaginary part data corresponding to the imaginary part singular point lower bound and the imaginary part singular point lower bound;

calculating an imaginary part extension frequency band integral according to the imaginary part dielectric response fitting function in the finite frequency band, the imaginary part dielectric response fitting function in the imaginary part low extension frequency band, the imaginary part dielectric response fitting function in the imaginary part high extension frequency band, the imaginary part minimum extension frequency, the imaginary part maximum extension frequency, the imaginary part singular point upper boundary and the imaginary part singular point lower boundary;

and calculating a simulated real part integral according to the imaginary part singular point frequency band integral and the imaginary part epitaxial frequency band integral.

2. A dielectric state analysis method according to claim 1,

calculating real part singular point frequency band integrals according to the real part data corresponding to the real part singular point upper bound and the real part upper bound of the real part singular point, the real part data corresponding to the singular point and the singular point, and the real part data corresponding to the real part singular point lower bound and the real part singular point lower bound, wherein the method comprises the following steps:

determining a first singular point real part coefficient, a second singular point real part coefficient, a third singular point real part coefficient and a fourth singular point real part coefficient according to the real part data corresponding to the real part singular point upper boundary and the real part upper boundary, the singular point, the real part data corresponding to the singular point, and the real part data corresponding to the real part singular point lower boundary;

adding the frequency band integral above the real part singular point and the frequency band integral below the real part singular point to obtain the real part singular point frequency band integral;

calculating imaginary part singular point frequency band integrals according to the imaginary part data corresponding to the imaginary part singular point upper bound and the imaginary part singular point upper bound, the imaginary part data corresponding to the singular point and the singular point, and the imaginary part data corresponding to the imaginary part singular point lower bound and the imaginary part singular point lower bound, wherein the imaginary part singular point frequency band integrals comprise:

determining a first singular point imaginary part coefficient, a second singular point imaginary part coefficient, a third singular point imaginary part coefficient and a fourth singular point imaginary part coefficient according to the imaginary part data corresponding to the imaginary part singular point upper boundary and the imaginary part singular point upper boundary, the imaginary part data corresponding to the singular point and the singular point, and the imaginary part data corresponding to the imaginary part singular point lower boundary and the imaginary part singular point lower boundary;

calculating an imaginary singular point upper frequency band integral according to the first singular point imaginary part coefficient, the second singular point imaginary part coefficient, the singular point, the imaginary singular point upper boundary and the imaginary singular point lower boundary;

calculating imaginary part singular point lower frequency band integrals according to the third singular point imaginary part coefficient, the fourth singular point imaginary part coefficient, the singular point, the imaginary part singular point upper bound and the imaginary part singular point lower bound;

and adding the frequency band integral of the imaginary part singular point and the frequency band integral of the imaginary part singular point to obtain the frequency band integral of the imaginary part singular point.

3. A dielectric state analysis method according to claim 2, wherein the band integral over the real singular point is calculated by the following formula:

wherein E is₂Frequency band integrals under the real part singular points are obtained, c is a real part coefficient of a third singular point, and d is a real part coefficient of a fourth singular point;

wherein, E'₁Is the frequency band integral on the imaginary part singular point, a 'is the imaginary part coefficient of the first singular point, b' is the second singular pointCoefficient of imaginary part, ω'_S-HIs imaginary singular point upper bound, ω'_S-LIs the imaginary singular point lower bound;

4. The dielectric state analysis method of claim 1, wherein calculating a real part truncated frequency domain integral from real part data corresponding to a real part lowest extension frequency, the real part lowest extension frequency, real part data corresponding to a real part highest extension frequency, the real part highest extension frequency, and the singular point comprises:

calculating a truncated frequency domain integral on the real part according to the real part data corresponding to the real part highest extension frequency, the real part highest extension frequency and the singular point;

calculating a truncation frequency domain integral under the real part according to the real part data corresponding to the minimum extension frequency of the real part, the minimum extension frequency of the real part and the singular point;

5. A dielectric state analysis method according to claim 4,

the truncated frequency domain integral over the real part is calculated by the following equation:

wherein, F₁For the truncated frequency domain integral over the real part, χ' (ω)_Ext-H) Is maximum extent of real partReal part data, omega, of frequency correspondence_SIs a singular point, ω_Ext-HThe highest extension frequency of the real part;

wherein, F₂Is the truncated frequency domain integral under the real part, χ' (ω)_Ext-L) For data of the real part corresponding to the lowest epitaxial frequency of the real part, omega_Ext-LThe lowest extension frequency of the real part; wherein the real part is integrated into the truncated frequency domain.

6. A dielectric state analysis method according to claim 1,

updating the real part interpolation step size by the following formula:

updating the imaginary interpolation step size by:

7. A dielectric state analysis method according to claim 1,

obtaining conductance information and real part of polarization process information includes:

using the same part in the simulated imaginary part integration and the actual imaginary part integration as real part information of a polarization process, and using different parts in the simulated imaginary part integration and the actual imaginary part integration as conductance information;

obtaining capacitance information and polarization process imaginary information includes:

and taking the same part in the simulated real part and the actual real part as polarization process imaginary part information, and taking the different part in the simulated real part and the actual real part as capacitance information.

8. A dielectric state analysis system, comprising:

the finite frequency band fitting function unit is used for fitting the real part data corresponding to the plurality of frequencies to obtain a real part dielectric response fitting function in the finite frequency band; fitting imaginary part data corresponding to the multiple frequencies to obtain an imaginary part dielectric response fitting function in a limited frequency band; wherein the limited frequency band is located between the lowest frequency and the highest frequency;

the extension frequency band fitting function unit is used for obtaining a real part dielectric response fitting function in a real part low extension frequency band according to the real part data corresponding to the lowest frequency and the real part data corresponding to the second lowest frequency, and obtaining a real part dielectric response fitting function in a real part high extension frequency band according to the real part data corresponding to the highest frequency and the real part data corresponding to the second highest frequency; obtaining an imaginary part dielectric response fitting function in an imaginary part low extension frequency band according to the imaginary part data corresponding to the lowest frequency and the imaginary part data corresponding to the second lowest frequency, and obtaining an imaginary part dielectric response fitting function in an imaginary part high extension frequency band according to the imaginary part data corresponding to the highest frequency and the imaginary part data corresponding to the second highest frequency; the real part low-extension frequency band is located between the lowest frequency and the real part lowest extension frequency, the real part high-extension frequency band is located between the highest frequency and the real part highest extension frequency, the imaginary part low-extension frequency band is located between the lowest frequency and the imaginary part lowest extension frequency, and the imaginary part high-extension frequency band is located between the highest frequency and the imaginary part highest extension frequency;

a real part iteration unit for performing the following iterative process:

a dielectric state unit for obtaining a dielectric state from the conductance information, the real part of the polarization process information, the capacitance information, and the imaginary part of the polarization process information;

the real part iteration unit is specifically configured to:

the imaginary part iteration unit is specifically configured to:

9. The dielectric state analysis system of claim 8, wherein the real iteration unit is specifically configured to:

the imaginary part iteration unit is specifically configured to:

10. A dielectric state analysis system according to claim 9, wherein the frequency band integral over the real singular point is calculated by the formula:

wherein, E'₁For the frequency band integration over the imaginary singular point,a ' is a first singular point imaginary part coefficient, b ' is a second singular point imaginary part coefficient, ω '_S-HIs imaginary singular point upper bound, ω'_S-LIs the imaginary singular point lower bound;

11. The dielectric state analysis system of claim 8, wherein the real iteration unit is specifically configured to:

12. The dielectric state analysis system of claim 11,

wherein, F₁For the truncated frequency domain integral over the real part, χ' (ω)_Ext-H) Data of the real part corresponding to the highest epitaxial frequency of the real part, omega_SIs a singular point, ω_Ext-HThe highest extension frequency of the real part;

13. A dielectric state analysis system according to claim 8,

updating the real part interpolation step size by the following formula:

updating the imaginary interpolation step size by:

14. The dielectric state analysis system of claim 8, wherein the real iteration unit is specifically configured to:

the imaginary part iteration unit is specifically configured to:

15. A computer device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, characterized in that the processor implements the steps of the dielectric state analysis method of any of claims 1 to 7 when executing the computer program.

16. A computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the steps of the dielectric state analysis method according to any one of claims 1 to 7.