WO2020196011A1 - Bonding device and bonding method - Google Patents

Bonding device and bonding method Download PDF

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Publication number
WO2020196011A1
WO2020196011A1 PCT/JP2020/011398 JP2020011398W WO2020196011A1 WO 2020196011 A1 WO2020196011 A1 WO 2020196011A1 JP 2020011398 W JP2020011398 W JP 2020011398W WO 2020196011 A1 WO2020196011 A1 WO 2020196011A1
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WIPO (PCT)
Prior art keywords
substrate
holding portion
pressure
space
joining
Prior art date
Application number
PCT/JP2020/011398
Other languages
French (fr)
Japanese (ja)
Inventor
憲雄 和田
範史 小濱
陽介 大森
穣 山▲崎▼
正巳 飽本
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to JP2021509082A priority Critical patent/JP7183391B2/en
Publication of WO2020196011A1 publication Critical patent/WO2020196011A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present disclosure relates to a joining device and a joining method.
  • the present disclosure provides a technique capable of producing a polymerized substrate with less distortion.
  • the joining device includes a first holding portion, a second holding portion, a moving mechanism, a seal member, and a control unit.
  • the first holding portion has a first suction region that sucks and holds the first substrate.
  • the second holding portion is arranged below the first holding portion and has a second suction region that sucks and holds the second substrate.
  • the moving mechanism moves the second holding portion at least up and down.
  • the seal member is provided on one of the first holding portion and the second holding portion, and surrounds one of the first suction region and the second suction region.
  • the control unit has a space forming process for forming a processing space isolated from the outside by bringing the second holding unit close to the first holding unit and surrounding both the first suction region and the second suction region with a sealing member.
  • a joining process for joining the first substrate and the second substrate is performed in the processing space.
  • FIG. 1 is a schematic diagram showing a configuration of a joining system according to an embodiment.
  • FIG. 2 is a schematic view showing the configuration of the joining system according to the embodiment.
  • FIG. 3 is a schematic view showing a state before joining the first substrate and the second substrate according to the embodiment.
  • FIG. 4 is a schematic view showing the configuration of the joining device according to the embodiment.
  • FIG. 5 is a schematic view showing how the first holding portion according to the embodiment is curved.
  • FIG. 6 is a schematic view showing the configuration of the seal member according to the embodiment.
  • FIG. 7 is a flowchart showing a procedure of processing executed by the joining system according to the embodiment.
  • FIG. 8 is a diagram showing an operation example of the joining device.
  • FIG. 9 is a diagram showing an operation example of the joining device.
  • FIG. 8 is a diagram showing an operation example of the joining device.
  • FIG. 10 is a diagram showing an operation example of the joining device.
  • FIG. 11 is a diagram showing an operation example of the joining device.
  • FIG. 12 is a schematic view showing the configuration of the seal member according to the modified example.
  • FIG. 13 is a diagram showing a configuration of a first holding portion included in the joining device according to another embodiment.
  • FIG. 14 is a schematic view showing how the first holding portion according to another embodiment is curved.
  • the embodiment a mode for carrying out the joining apparatus and the joining method according to the present disclosure (hereinafter, referred to as “the embodiment”) will be described in detail with reference to the drawings. It should be noted that this embodiment does not limit the joining device and joining method according to the present disclosure. In addition, each embodiment can be appropriately combined as long as the processing contents do not contradict each other. Further, in each of the following embodiments, the same parts are designated by the same reference numerals, and duplicate description is omitted.
  • FIGS. 1 to 3. are schematic views showing the configuration of the joining system according to the embodiment. Further, FIG. 3 is a schematic view showing a state before joining the first substrate and the second substrate according to the embodiment.
  • the bonding system 1 shown in FIG. 1 forms a polymerization substrate T by bonding the first substrate W1 and the second substrate W2 (see FIG. 3).
  • the first substrate W1 and the second substrate W2 are substrates in which a plurality of electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer.
  • the first substrate W1 and the second substrate W2 have substantially the same diameter.
  • One of the first substrate W1 and the second substrate W2 may be, for example, a substrate on which no electronic circuit is formed.
  • the plate surface on the side to be joined to the second substrate W2 is described as “joining surface W1j", which is opposite to the joining surface W1j.
  • the plate surface is described as "non-bonded surface W1n”.
  • the plate surface on the side to be joined to the first substrate W1 is described as “joining surface W2j”
  • the plate surface on the side opposite to the joining surface W2j is “non-joining surface W2n”.
  • the joining system 1 includes a loading / unloading station 2 and a processing station 3.
  • the carry-in / out station 2 is arranged on the negative side of the X-axis of the processing station 3 and is integrally connected to the processing station 3.
  • the loading / unloading station 2 includes a mounting table 10 and a transport area 20.
  • the mounting table 10 includes a plurality of mounting plates 11.
  • Cassettes C1 to C4 for horizontally accommodating a plurality of (for example, 25) substrates are mounted on each mounting plate 11.
  • the cassette C1 can accommodate a plurality of first substrates W1
  • the cassette C2 can accommodate a plurality of second substrates W2
  • the cassette C3 can accommodate a plurality of polymerization substrates T.
  • the cassette C4 is, for example, a cassette for collecting a defective substrate.
  • the number of cassettes C1 to C4 mounted on the mounting plate 11 is not limited to the one shown in the figure.
  • the transport area 20 is arranged adjacent to the X-axis positive direction side of the mounting table 10.
  • the transport region 20 is provided with a transport path 21 extending in the Y-axis direction and a transport device 22 that can move along the transport path 21.
  • the transport device 22 can move not only in the Y-axis direction but also in the X-axis direction and can rotate around the Z-axis.
  • the transfer device 22 is formed between the cassettes C1 to C4 mounted on the mounting plate 11 and the third processing block G3 of the processing station 3, which will be described later, of the first substrate W1, the second substrate W2, and the polymerization substrate T. Carry out.
  • the processing station 3 is provided with, for example, three processing blocks G1, G2, and G3.
  • the first processing block G1 is arranged on the front side (Y-axis negative direction side in FIG. 1) of the processing station 3.
  • the second processing block G2 is arranged on the back side of the processing station 3 (the positive direction side of the Y axis in FIG. 1)
  • the third processing block G3 is on the loading / unloading station 2 side of the processing station 3 (X in FIG. 1). It is placed on the negative axis side).
  • a surface reforming device 30 that modifies the joint surfaces W1j and W2j of the first substrate W1 and the second substrate W2 is arranged in the first processing block G1.
  • the surface modifier 30 cuts the bond of SiO2 on the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2 to form a single-bonded SiO, so that the bonding surface W1j can be easily hydrophilized thereafter. , W2j is modified.
  • the surface reformer 30 for example, oxygen gas or nitrogen gas, which is a processing gas, is excited to be turned into plasma and ionized in a reduced pressure atmosphere. Then, by irradiating the joint surfaces W1j and W2j of the first substrate W1 and the second substrate W2 with such oxygen ions or nitrogen ions, the joint surfaces W1j and W2j are plasma-treated and modified.
  • oxygen gas or nitrogen gas which is a processing gas
  • a surface hydrophilizing device 40 and a joining device 41 are arranged in the second processing block G2.
  • the surface hydrophilization device 40 hydrolyzes the joint surfaces W1j and W2j of the first substrate W1 and the second substrate W2 with pure water, and cleans the joint surfaces W1j and W2j.
  • the surface hydrophilization device 40 supplies pure water onto the first substrate W1 or the second substrate W2 while rotating the first substrate W1 or the second substrate W2 held by the spin chuck, for example. ..
  • the pure water supplied on the first substrate W1 or the second substrate W2 diffuses on the joint surfaces W1j and W2j of the first substrate W1 or the second substrate W2, and the joint surfaces W1j and W2j are hydrophilized. ..
  • the joining device 41 joins the hydrophilized first substrate W1 and the second substrate W2 by an intermolecular force.
  • the configuration of the joining device 41 will be described later.
  • the third processing block G3 is provided with transition devices 50 and 51 of the first substrate W1, the second substrate W2, and the polymerization substrate T in order from the bottom.
  • a transport region 60 is formed in a region surrounded by the first processing block G1, the second processing block G2, and the third processing block G3.
  • a transport device 61 is arranged in the transport region 60.
  • the transport device 61 has, for example, a transport arm that is movable in the vertical direction, the horizontal direction, and around the vertical axis.
  • the transfer device 61 moves in the transfer area 60, and the first substrate W1 and the second are connected to predetermined devices in the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the transport area 60.
  • the substrate W2 and the polymerization substrate T are conveyed.
  • the joining system 1 includes a control device 70.
  • the control device 70 controls the operation of the joining system 1.
  • a control device 70 is, for example, a computer, and includes a control unit and a storage unit (not shown).
  • the control unit includes a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input / output port, and various circuits.
  • the CPU of such a microcomputer realizes the control described later by reading and executing the program stored in the ROM.
  • the storage unit is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.
  • the program may be recorded on a recording medium that can be read by a computer, and may be installed from the recording medium in the storage unit of the control device 70.
  • Recording media that can be read by a computer include, for example, a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.
  • FIG. 4 is a schematic view showing the configuration of the joining device 41 according to the embodiment.
  • the joining device 41 includes a first holding portion 101, a first housing 102, a rotation mechanism 103, and a sealing mechanism 104. Further, the joining device 41 includes a second holding portion 201, a second housing 202, a moving mechanism 203, an exhaust mechanism 204, and a decompression mechanism 205. Further, the joining device 41 includes a thickness measuring unit 401.
  • the first holding unit 101 holds the first substrate W1. Specifically, the first holding portion 101 has a first suction region 111 for sucking and holding the first substrate W1 on the lower surface.
  • the first suction region 111 is connected to a suction device 114 such as a vacuum pump via a path portion 112 formed inside the first holding portion 101.
  • the first holding portion 101 sucks and holds the entire upper surface of the first substrate W1 by evacuating the first suction region 111 using the suction device 114.
  • the first adsorption region 111 includes, for example, a plurality of pins in contact with the upper surface (non-bonding surface W1n) of the first substrate W1 and an annular rib supporting the outer periphery of the back surface (non-bonding surface W1n) of the first substrate W1. It may be provided. In this case, the space formed by the plurality of pins, the annular ribs, and the first substrate W1 is evacuated by the suction device 114, so that the first substrate W1 is suction-held in the first suction region 111. Further, the first adsorption region 111 may be formed of a porous material such as silicon carbide.
  • the first substrate W1 is adsorbed and held in the first adsorption region 111 by sucking the first substrate W1 through the pores formed in the porous body. Further, the first adsorption region 111 may electrostatically adsorb the first substrate W1.
  • a curved concave portion 116 is formed on the upper surface of the first holding portion 101.
  • the recess 116 is formed directly above the first suction region 111, and its lowest point coincides with the central portion of the first suction region 111 (in other words, the central portion of the first substrate W1). The function of the recess 116 will be described later.
  • the first holding portion 101 is formed of a ceramic material such as alumina ceramic or SiC (silicon carbide). Therefore, the first holding portion 101 can be expanded and contracted in the vertical direction and the horizontal direction, and can realize a highly accurate flat surface and high resilience.
  • a ceramic material such as alumina ceramic or SiC (silicon carbide). Therefore, the first holding portion 101 can be expanded and contracted in the vertical direction and the horizontal direction, and can realize a highly accurate flat surface and high resilience.
  • the first housing 102 is connected to, for example, the upper surface of the first holding portion 101 to support the first holding portion 101 from above.
  • the first housing 102 has a first accumulator space 121 between the first housing 102 and the upper surface of the first holding portion 101.
  • the first accumulator space 121 is a closed space formed by an internal space (recess) formed in the first housing 102 and opening downward, and an upper surface of the first holding portion 101.
  • the first accumulator space 121 is connected to the first housing pressure adjusting unit 124 via a path portion 122 formed inside the first housing 102.
  • the first housing pressure adjusting unit 124 decompresses the first pressure accumulating space 121 by exhausting the first accumulating space 121 via the path portion 122.
  • the pressure adjusting unit 124 of the first housing can adjust the pressure of the first pressure accumulating space 121 by adjusting the exhaust amount of the first accumulating space 121.
  • the first accumulator space 121 can also pressurize the first accumulator space 121 by supplying a gas such as air or nitrogen to the first accumulator space 121 via the path portion 122.
  • the pressure adjusting unit 124 of the first housing may adjust the pressure of the first pressure accumulating space 121 by supplying a liquid such as water to the first accumulating space 121.
  • FIG. 5 is a schematic view showing how the first holding portion 101 according to the embodiment is curved.
  • the joining device 41 uses the lower surface of the first holding portion 101, the upper surface of the second holding portion 201, and the sealing member 141. Form a sealed processing space. Further, this processing space is decompressed by the suction device 254.
  • the control device 70 controls the pressure adjusting unit 124 of the first housing to adjust the pressure of the first accumulating space 121 so as to be higher than the pressure of the processing space.
  • the first holding portion 101 is deformed by the pressure difference between the processing space and the first accumulating space 121.
  • the first suction region 111 provided on the lower surface of the first holding portion 101 and the first substrate W1 suction-held by the first suction region 111 are curved downward.
  • the first substrate W1 and the second substrate W2 are brought into contact with each other by bending the first suction region 111 together with the first substrate W1 in a curved surface downward as described above.
  • a curved concave portion 116 having a lowermost point directly above the central portion of the first suction region 111 is formed on the upper surface of the first holding portion 101.
  • the lower surface of the first holding portion 101 can be appropriately deformed, and the central portions of the first substrate W1 and the second substrate W2 can be appropriately brought into contact with each other.
  • the rotation mechanism 103 is fixed to a beam portion 131 arranged above the first housing 102, and rotatably supports the first housing 102 from above.
  • the rotation mechanism 103 has a drive unit that rotates the shaft portion 132 connected to the upper surface of the first housing 102 around a vertical shaft, and by rotating the shaft portion 132 using such a drive unit, the first 1
  • the holding portion 101 and the first housing 102 can be rotated around a vertical axis.
  • the seal mechanism 104 includes a seal member 141, a connecting pipe 144, a seal pressure adjusting unit 146, and a pressure measuring unit 148.
  • the seal member 141 is an annular seal member (O-ring) made of a flexible material such as resin.
  • the seal member 141 has a diameter larger than that of the first suction region 111, and is provided on the lower surface of the first holding portion 101 so as to surround the first suction region 111.
  • the seal member 141 has an annular internal space 142.
  • the internal space 142 is connected to the seal pressure adjusting portion 146 via a path portion 118 formed inside the first holding portion 101 and a connecting pipe 144 connected to the path portion 118.
  • the seal pressure adjusting portion 146 can pressurize the internal space 142 by supplying a gas such as air or nitrogen to the internal space 142 of the seal member 141 via the connecting pipe 144 and the path portion 118. Further, the seal pressure adjusting unit 146 can adjust the pressure in the internal space 142 by adjusting the flow rate of the gas supplied to the internal space 142.
  • the seal pressure adjusting unit 146 may adjust the pressure in the internal space 142 by supplying a liquid such as water to the internal space 142.
  • the pressure measuring unit 148 is provided in the connecting pipe 144 and measures the pressure in the internal space 142. The measurement result by the pressure measuring unit 148 is input to the control device 70.
  • FIG. 6 is a schematic view showing the configuration of the seal mechanism 104. Note that FIG. 6 shows a schematic view of the seal mechanism 104 as viewed from below.
  • the internal space 142 of the seal member 141 is divided into a plurality of individual spaces 142a to 142c arranged along the circumferential direction of the seal member 141.
  • the seal pressure adjusting unit 146 includes a plurality of individual pressure adjusting units 146a to 146c corresponding to the plurality of individual spaces 142a to 142c.
  • the individual pressure regulating unit 146a is connected to the individual space 142a via the connecting pipe 144a.
  • a pressure measuring unit 148a is provided on the connecting pipe 144a.
  • the individual pressure adjusting unit 146b is connected to the individual space 142b via the connecting pipe 144b.
  • a pressure measuring unit 148b is provided on the connecting pipe 144b.
  • the individual pressure adjusting unit 146c is connected to the individual space 142c via the connecting pipe 144c.
  • a pressure measuring unit 148c is provided on the connecting pipe 144c.
  • the internal space 142 of the seal member 141 is divided into a plurality of individual spaces 142a to 142c arranged in the circumferential direction, and the seal pressure adjusting unit 146 individually adjusts the pressure of the plurality of individual spaces 142a to 142c. It is possible.
  • the joining device 41 includes a plurality of distance measuring units 150a to 150c.
  • the plurality of distance measuring units 150a to 150c are provided, for example, at equal intervals with respect to the side surface of the first holding unit 101.
  • the plurality of distance measuring units 150a to 150c are provided corresponding to the plurality of individual spaces 142a to 142c. That is, the distance measuring unit 150a is provided on the side surface of the first holding unit 101 on the side where the individual space 142a is located, and the distance measuring unit 150b is provided on the side surface of the first holding unit 101 on the side where the individual space 142b is located. Be done. Further, the distance measuring unit 150c is provided on the side surface of the first holding unit 101 on the side where the individual space 142c is located.
  • These plurality of distance measuring units 150a to 150c are, for example, laser displacement meters.
  • the second holding portion 201 which will be described later, is provided with a plurality of flat portions having the same height as the upper surface of the second holding portion 201 in association with the plurality of distance measuring units 150a to 150c.
  • the plurality of distance measuring units 150a to 150c measure the distance to the upper surface of the second holding unit 201 by irradiating the corresponding flat surface portion with laser light downward and receiving the reflected light.
  • the measurement results by the plurality of distance measuring units 150a to 150c are input to the control device 70.
  • the number of divisions of the internal space 142 is not limited to three.
  • the seal member 141 may be provided in the second holding portion 201.
  • the second holding portion 201 is arranged below the first holding portion 101 and holds the second substrate W2. Specifically, the second holding portion 201 has a second suction region 211 on the upper surface that sucks and holds the second substrate W2.
  • the second suction region 211 is connected to a suction device 214 such as a vacuum pump via a path portion 212 formed inside the second holding portion 201.
  • the second holding unit 201 sucks and holds the entire upper surface of the second substrate W2 by evacuating the second suction region 211 using the suction device 214.
  • the second adsorption region 211 may be configured to include a plurality of pins and annular ribs, or may be formed of a porous body. Further, the second adsorption region 211 may electrostatically adsorb the second substrate W2.
  • a curved concave portion 216 is formed on the lower surface of the second holding portion 201.
  • the recess 216 is formed directly below the second suction region 211, and its apex coincides with the central portion of the second suction region 211 (in other words, the central portion of the second substrate W2). The function of the recess 216 will be described later.
  • the second holding portion 201 is formed of a ceramic material such as alumina ceramic or SiC (silicon carbide). Therefore, the second holding portion 201 can be expanded and contracted in the vertical direction and the horizontal direction, and can realize a highly accurate flat surface and high resilience.
  • a ceramic material such as alumina ceramic or SiC (silicon carbide). Therefore, the second holding portion 201 can be expanded and contracted in the vertical direction and the horizontal direction, and can realize a highly accurate flat surface and high resilience.
  • the second housing 202 is connected to, for example, the lower surface of the second holding portion 201 to support the second holding portion 201 from below.
  • the second housing 202 has a second accumulator space 221 between the second housing 202 and the lower surface of the second holding portion 201.
  • the second accumulator space 221 is a closed space formed by the recess formed in the second housing 202 and the lower surface of the second holding portion 201.
  • the second housing pressure adjusting section 224 depressurizes the second accumulating space 221 by exhausting the second accumulating space 221 via the path portion 222.
  • the pressure adjusting unit 224 of the second housing can adjust the pressure of the second pressure accumulating space 221 by adjusting the exhaust amount of the second accumulating space 221.
  • the second accumulator space 221 can also pressurize the second accumulator space 221 by supplying a gas such as air or nitrogen to the second accumulator space 221 via the path portion 222.
  • the pressure adjusting unit 224 of the second housing may adjust the pressure in the second accumulator space 221 by supplying a liquid such as water to the second accumulator space 221.
  • the moving mechanism 203 includes an elevating moving unit 231 that moves the second housing 202 up and down, and a horizontal moving unit 232 that horizontally moves the second housing 202.
  • the vertical movement unit 231 includes a shaft 231a that extends along the vertical direction and supports the second housing 202 from below, and a drive unit 231b such as a motor that raises and lowers the shaft 231a.
  • the drive unit 231b is provided on the horizontal movement unit 232.
  • the horizontal movement unit 232 moves the elevating movement unit 231 in the horizontal direction, specifically, along the Y-axis direction and the X-axis direction.
  • the moving mechanism 203 can move the second holding portion 201 and the second substrate W2 up and down and horizontally.
  • the exhaust mechanism 204 includes an annular exhaust pipe 241, a connecting pipe 242, and a suction device 244.
  • the exhaust pipe 241 is an outer peripheral portion of the second holding portion 201 so as to surround the processing space formed by the sealing member 141 provided on the lower surface of the first holding portion 101 coming into contact with the upper surface of the second holding portion 201. It is provided in.
  • the exhaust pipe 241 is arranged outside the seal member 141, that is, outside the processing space.
  • a plurality of exhaust ports 241a that open toward the processing space are formed in the exhaust pipe 241 along the circumferential direction of the exhaust pipe 241.
  • the connection pipe 242 connects the exhaust pipe 241 and the suction device 244.
  • the suction device 244 is, for example, a vacuum pump and exhausts the exhaust pipe 241.
  • the exhaust mechanism 204 is configured as described above, and particles generated when the seal member 141 comes into contact with the upper surface of the second holding portion 201, and generated when the seal member 141 separates from the upper surface of the second holding portion 201. Attracts particles and other particles. As a result, the cleanliness of the joining device 41 can be maintained.
  • the depressurizing mechanism 205 decompresses the processing space.
  • the decompression mechanism 205 includes a connecting pipe 252 and a suction device 254.
  • the connecting pipe 252 is connected to one end of the path portion 218 formed inside the second holding portion 201.
  • the other end of the path portion 218 is provided inside the seal member 141, that is, inside the processing space.
  • the suction device 254 is connected to the path portion 218 via the connecting pipe 252, and the processing space is depressurized by sucking the processing space.
  • the measuring unit 401 measures the thickness of the first substrate W1 held by the first holding unit 101 and the thickness of the second substrate W2 held by the second holding unit 201.
  • the measuring unit 401 includes a first displacement sensor, a second displacement sensor, and a moving mechanism.
  • the first displacement sensor and the second displacement sensor are, for example, laser displacement meters.
  • the first displacement sensor measures the distance to the lower surface of the first substrate W1 by irradiating the lower surface of the first substrate W1 with laser light and receiving the reflected light.
  • the second displacement sensor measures the distance to the upper surface of the second substrate W2 by irradiating the upper surface of the second substrate W2 with a laser beam and receiving the reflected light.
  • the moving mechanism moves the first displacement sensor and the second displacement sensor along the horizontal direction (here, the X-axis direction).
  • the thickness measuring unit 401 moves the first displacement sensor and the second displacement sensor from the retracted position to the thickness measuring position between the first holding unit 101 and the second holding unit 201. Subsequently, the distance from the first displacement sensor to the lower surface of the first substrate W1 is measured using the first displacement sensor, and the distance from the second displacement sensor to the upper surface of the second substrate W2 is measured using the second displacement sensor. To measure. The measurement results by the first displacement sensor and the second displacement sensor are input to the control device 70.
  • the control device 70 calculates the thickness of the first substrate W1 by using the measurement result by the first displacement sensor and the distance from the first displacement sensor acquired in advance to the lower surface of the first holding portion 101. Further, the control device 70 calculates the thickness of the second substrate W2 by using the measurement result by the second displacement sensor and the distance from the second displacement sensor acquired in advance to the upper surface of the second holding portion 201. ..
  • the joining device 41 is provided with a transition, a reversing mechanism, a position adjusting mechanism, and the like in front of the first holding portion 101, the second holding portion 201, and the like shown in FIG.
  • the transition temporarily mounts the first substrate W1, the second substrate W2, and the polymerization substrate T.
  • the position adjusting mechanism adjusts the horizontal orientation of the first substrate W1 and the second substrate W2.
  • the reversing mechanism reverses the front and back of the first substrate W1.
  • FIG. 7 is a flowchart showing a process executed by the joining system 1.
  • the various processes shown in FIG. 7 are executed based on the control by the control device 70.
  • 8 to 11 are diagrams showing an operation example of the joining device 41.
  • a cassette C1 containing a plurality of first substrates W1, a cassette C2 accommodating a plurality of second substrates W2, and an empty cassette C3 are placed on a predetermined mounting plate 11 of the loading / unloading station 2.
  • the first substrate W1 in the cassette C1 is taken out by the transfer device 22, and is transferred to the transition devices 50 and 51 arranged in the third processing block G3.
  • the first substrate W1 is conveyed to the surface modification device 30 of the first processing block G1 by the transfer device 61.
  • oxygen gas which is a processing gas
  • the oxygen ions are irradiated to the joint surface of the first substrate W1, and the joint surface is subjected to plasma treatment.
  • the joint surface of the first substrate W1 is modified (step S101).
  • the first substrate W1 is conveyed to the surface hydrophilic device 40 of the second processing block G2 by the transfer device 61.
  • the surface hydrophilization device 40 pure water is supplied onto the first substrate W1 while rotating the first substrate W1 held by the spin chuck. As a result, the joint surface of the first substrate W1 is made hydrophilic. Further, the joint surface of the first substrate W1 is washed with the pure water (step S102).
  • the first substrate W1 is conveyed to the joining device 41 of the second processing block G2 by the conveying device 61.
  • the first substrate W1 carried into the joining device 41 is conveyed to the position adjusting mechanism via the transition, and the horizontal orientation is adjusted by the position adjusting mechanism (step S103).
  • the first substrate W1 is handed over from the position adjusting mechanism to the reversing mechanism, and the front and back surfaces of the first substrate W1 are inverted by the reversing mechanism (step S104). Specifically, the joint surface W1j of the first substrate W1 is directed downward.
  • the first substrate W1 is delivered from the reversing mechanism to the first holding unit 101.
  • the first substrate W1 is suction-held by the first holding portion 101 with the notch portion oriented in a predetermined direction (step S105).
  • the processing of the second substrate W2 is performed in duplicate with the processing of steps S101 to S105 for the first substrate W1.
  • the second substrate W2 in the cassette C2 is taken out by the transfer device 22, and is transferred to the transition devices 50 and 51 arranged in the third processing block G3.
  • the second substrate W2 is conveyed to the surface modification device 30 by the transfer device 61, and the joint surface W2j of the second substrate W2 is modified (step S106).
  • the second substrate W2 is transported to the surface hydrophilization device 40 by the transport device 61, the joint surface W2j of the second substrate W2 is hydrophilized, and the joint surface is washed (step S107).
  • the second substrate W2 is conveyed to the joining device 41 by the conveying device 61.
  • the second substrate W2 carried into the joining device 41 is conveyed to the position adjusting mechanism via the transition.
  • the horizontal orientation of the second substrate W2 is adjusted by the position adjusting mechanism (step S108).
  • the second substrate W2 is conveyed to the second holding portion 201, and is attracted and held by the second holding portion 201 with the notch portion oriented in a predetermined direction (step S109).
  • step S110 the horizontal position adjustment between the first substrate W1 held by the first holding portion 101 and the second substrate W2 held by the second holding portion 201 is performed.
  • a plurality of predetermined reference points are formed on the joint surface W1j of the first substrate W1. Further, a plurality of predetermined reference points are also formed on the joint surface W1j of the second substrate W2. As these reference points, for example, predetermined patterns formed on the first substrate W1 and the second substrate W2 are used, respectively. The number of reference points can be set arbitrarily.
  • the horizontal positions of the first substrate W1 and the second substrate W2 are adjusted by using, for example, a first imaging unit and a second imaging unit (not shown).
  • the first imaging unit images a reference point formed on the lower surface (joining surface W1j) of the first substrate W1
  • the second imaging unit takes a reference point formed on the upper surface (joining surface W2j) of the second substrate W2.
  • the image data captured by the first imaging unit and the second imaging unit is output to the control device 70.
  • the control device 70 uses the horizontal moving portion 232 of the moving mechanism 203 so that the reference point of the first substrate W1 and the reference point of the second substrate W2 coincide with each other. Move 201 horizontally.
  • the control device 70 uses the rotation mechanism 103 to rotate the first holding portion 101 around the vertical axis so that the reference point of the first substrate W1 and the reference point of the second substrate W2 coincide with each other. In this way, the horizontal positions of the first holding portion 101 and the second holding portion 201 are adjusted, and the horizontal positions of the first substrate W1 and the second substrate W2 are adjusted.
  • the thickness measuring unit 401 measures the thicknesses of the first substrate W1 and the second substrate W2 (step S111).
  • Step S112 a space forming process is performed in which the first substrate W1 and the second substrate W2 are brought close to each other to a first distance (for example, 50 ⁇ m) to form a processing space surrounding the first substrate W1 and the second substrate W2 with the sealing member 141.
  • the second holding portion 201 is raised by using the elevating moving portion 231 of the moving mechanism 203.
  • the control device 70 calculates the climbing distance of the second holding unit 201 in consideration of the thicknesses of the first substrate W1 and the second substrate W2 measured by the thickness measuring unit 401. For example, the control device 70 calculates the distance between the first suction region 111 and the second suction region 211 using the measurement results of the plurality of distance measuring units 150a to 150c. Then, the control device 70 is the first until the value obtained by subtracting the thickness of the first substrate W1 and the thickness of the second substrate W2 from the calculated distance between the first adsorption region 111 and the second adsorption region 211 becomes the first distance. 2 The holding portion 201 is raised.
  • the joining device 41 can appropriately control the distance between the first substrate W1 and the second substrate W2 by including the thickness measuring unit 401.
  • the seal member 141 provided on the lower surface of the first holding portion 101 comes into contact with the upper surface of the second holding portion 201.
  • a processing space surrounded by the lower surface of the first holding portion 101, the upper surface of the second holding portion 201, and the seal member 141 is formed.
  • the first suction region 111 and the second suction region 211 are arranged in the processing space so as to be surrounded by the seal member 141. Further, the first substrate W1 adsorbed and held in the first adsorption region 111 and the second substrate W2 adsorbed and held in the second adsorption region 211 are also arranged in the processing space.
  • control device 70 controls the suction device 254 (see FIG. 4) to evacuate the processing space to reduce the pressure in the processing space.
  • the first holding portion 101 and the second holding portion 201 try to approach each other due to the pressure difference between the inside and the outside of the processing space. Therefore, the distance between the first substrate W1 and the second substrate W2 may be shorter than the first distance.
  • the control device 70 maintains the distance between the first substrate W1 and the second substrate W2 at the first distance by controlling the seal pressure adjusting unit 146 to adjust the pressure of the internal space 142 in the seal member 141. .. Specifically, in the control device 70, the value obtained by multiplying the pressure V6 of the processing space by the flat area of the processing space and the value obtained by multiplying the pressure V5 of the internal space 142 by the flat area of the seal member 141 match. , Adjust the pressure V5 of the internal space 142. That is, the pressure V5 of the internal space 142 is adjusted so that the force for narrowing the processing space and the force for expanding the processing space are balanced. The control device 70 can appropriately adjust the pressure V5 in the internal space 142 by controlling the seal pressure adjusting unit 146 while monitoring the pressure V5 in the internal space 142 based on the measurement result by the pressure measuring unit 148. ..
  • the "flat area of the processing space” is an area that receives a force due to a pressure difference between the inside and the outside of the processing space.
  • the "flat area of the seal member 141" is an area that transmits a force that opposes the force due to the pressure difference.
  • the lower surface (or the first) of the seal member 141 and the first holding portion 101. 2 Corresponds to the contact area with the upper surface of the holding portion 201).
  • the internal space 142 is divided into a plurality of individual spaces 142a to 142c (see FIG. 6), and the plurality of individual spaces 142a to 142c are divided into a plurality of individual pressure regulating portions 146a to 146c (FIG. 6).
  • the pressure can be adjusted individually by (see).
  • the control device 70 acquires the measurement results of the plurality of distance measuring units 150a to 150c corresponding to the plurality of individual spaces 142a to 142c. Then, based on the acquired measurement result, the control device 70 controls a plurality of individual pressure adjusting units 146a to 146c so that the parallelism between the first holding unit 101 and the second holding unit 201 becomes equal to or higher than the threshold value.
  • the pressures of the plurality of individual spaces 142a to 142c are individually adjusted.
  • the control device 70 controls the individual pressure adjusting unit 146a to increase the pressure in the individual space 142a, thereby bringing the measurement result of the distance measuring unit 150a closer to the first distance.
  • the first holding portion 101 and the second holding portion 201 can be kept in parallel, and the first substrate W1 and the second substrate W2 can be appropriately joined in the subsequent joining process.
  • control device 70 controls the first housing pressure adjusting unit 124 and the second housing pressure adjusting unit 224 to reduce the pressure in the first accumulating space 121 and the second accumulating space 221. Specifically, the control device 70 adjusts the pressure V3 and V4 of the first accumulator space 121 and the second accumulator space 221 so that the pressures V3 and V4 of the first accumulator space 121 and the second accumulator space 221 match the pressure V6 of the processing space.
  • the pressure unit 224 is controlled to adjust the pressure in the first pressure accumulation space 121 and the second pressure accumulation space 221.
  • control device 70 controls the suction device 244 to exhaust the air around the processing space.
  • particles or the like generated when the seal member 141 comes into contact with the upper surface of the second holding portion 201 can be discharged from the exhaust pipe 241 to the outside of the joining device 41.
  • the pressure V1 at which the first suction region 111 sucks the first substrate W1 and the pressure V2 at which the second suction region 211 sucks the second substrate W2 are lower than the pressure V6 in the processing space. It controls the suction device 114 and the suction device 214. As a result, it is possible to prevent the first substrate W1 and the second substrate W2 from coming off from the first adsorption region 111 and the second adsorption region 211.
  • the pressure V1 at which the first adsorption region 111 adsorbs the first substrate W1 is set lower than the pressure V2 at which the second adsorption region 211 adsorbs the second substrate W2. It is desirable to be done. That is, it is desirable that the suction force of the first substrate W1 by the first suction region 111 is set stronger than the suction force of the second substrate W2 by the second suction region 211.
  • Step S113 see FIG. 9
  • the control device 70 calculates the climbing distance of the second holding unit 201 in consideration of the thicknesses of the first substrate W1 and the second substrate W2 measured by the thickness measuring unit 401.
  • control device 70 controls a plurality of individual pressure adjusting units 146a to 146c based on the measurement results of the plurality of distance measuring units 150a to 150c to individually adjust the pressures of the plurality of individual spaces 142a to 142c. 2
  • the holding portion 201 is raised. As a result, the first substrate W1 and the second substrate W2 can be brought close to each other while maintaining the parallelism between the first substrate W1 and the second substrate W2.
  • control device 70 controls the first housing pressure adjusting unit 124 and the second housing pressure adjusting unit 224 to make the pressure in the first accumulating space 121 and the second accumulating space 221 higher than the pressure in the processing space.
  • the pressures V3 and V4 are adjusted (step S114).
  • the first adsorption region 111 and the second adsorption region 211 are curved, and the central portion of the first substrate W1 that is adsorbed and held by the first adsorption region 111 and the second adsorption region 211 are formed. It comes into contact with the central portion of the second substrate W2 which is adsorbed and held by.
  • the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 are hydrophilized in steps S102 and S107, respectively, the hydrophilic groups between the bonding surfaces W1j and W2j are hydrogen-bonded, and the bonding surface W1j , W2j are firmly joined to each other.
  • control device 70 has the same pressures V3 and V4 in the first accumulator space 121 and the second accumulator space 221 so that the degree of curvature of the first substrate W1 and the second substrate W2 is the same. Make it a value.
  • the control device 70 controls the suction device 254 to reduce the pressure V5 of the internal space 142 in the seal member 141 (step S115).
  • the first holding portion 101 and the second holding portion 201 come close to each other due to the pressure difference between the inside and the outside of the processing space, so that the first substrate W1 and the second substrate W2 are brought into contact with each other.
  • the first substrate W1 and the second substrate W2 are joined to each other by abutting on the entire surface.
  • the control device 70 may bring the second substrate W2 closer to the first substrate W1 by controlling the elevating movement portion 231 to raise the second holding portion 201, or the beam portion 131.
  • the first substrate W1 may be brought closer to the second substrate W2 by utilizing the bending.
  • the control device 70 pressurizes the first substrate W1 and the second substrate W2 (step S116).
  • the control device 70 controls at least one of the first housing pressure adjusting unit 124 and the second housing pressure adjusting unit 224 to process at least one of the pressures V3 and V4 of the first pressure accumulating space 121 and the second accumulating space 221. Make it even higher than the pressure in space.
  • the first substrate W1 and the second substrate W2 can be pressurized by bringing the first holding portion 101 and the second holding portion 201 close to each other.
  • control device 70 controls at least one of the suction device 114 and the suction device 214, and controls at least one of the pressure V1 for adsorbing the first substrate W1 and the pressure V2 for adsorbing the second substrate W2 as the pressure V6 in the processing space. May be higher than. This also makes it possible to pressurize the first substrate W1 and the second substrate W2. Further, the control device 70 may raise the second holding unit 201 by using the elevating / moving unit 231. This also makes it possible to pressurize the first substrate W1 and the second substrate W2.
  • the polymerization substrate T formed by the joining process of steps S114 to S116 is conveyed to the transition devices 50 and 51 of the third processing block G3 by the transfer device 61, and then transferred to the cassette C3 by the transfer device 22 of the carry-in / out station 2. (Step S117). In this way, a series of processes is completed.
  • FIG. 12 is a schematic view showing the configuration of the seal member according to the modified example.
  • the seal member 141A according to the modified example has an internal space 142A that is open downward.
  • the internal space 142A is sealed when the sealing member 141A comes into contact with the upper surface of the second holding portion 201.
  • the seal member 141A may have an internal space 142A that is closed at least in a state where the processing space is formed.
  • the seal member 141 having a square cross-sectional shape has been described as an example, but the cross-sectional shape of the seal member 141 does not necessarily have to be square, and even if it is circular, for example. Good.
  • step S114 the control device 70 controls the first housing pressure adjusting unit 124 and the second housing pressure adjusting unit 224, so that the first accumulating space 121 and the second accumulating space 221 become higher than the normal pressure.
  • the first accumulator space 121 and the second accumulator space 221 may be pressurized.
  • step S114 an example in which both the first adsorption region 111 and the second adsorption region 211 are curved has been described in step S114, but only one of the first adsorption region 111 and the second adsorption region 211 has been described. May be curved.
  • the joining device 41 may be provided with a pressing mechanism in the rotating mechanism 103.
  • the first substrate W1 and the second substrate W2 can be pressurized by using the pressing mechanism provided in the rotation mechanism 103.
  • FIG. 13 is a diagram showing a configuration of a first holding portion included in the joining device according to another embodiment. Further, FIG. 14 is a schematic view showing how the first holding portion according to another embodiment is curved. Although the configuration of the first holding portion is shown here as an example, the second holding portion may also have the same configuration.
  • the joining device 41B includes a first holding portion 101B.
  • a curved convex portion 117 is formed on the upper surface of the first holding portion 101B.
  • the convex portion 117 is formed so that its apex coincides with the central portion of the first suction region 111 (in other words, the central portion of the first substrate W1).
  • the thickness of the central portion of the first holding portion 101B is larger than the thickness of the outer peripheral portion.
  • the outer peripheral portion of the first holding portion 101B is fixed to the first housing 102B by a fixing ring 125 provided on the lower outer peripheral portion of the first housing 102B. Further, a first accumulator space 121B is formed between the first holding portion 101B and the first housing 102B.
  • the first holding unit 101B is pressed from above. ..
  • the first holding portion 101B is lowered due to the pressure difference between the first accumulating space 121B and the processing space. It protrudes convexly toward.
  • the first holding portion 101B may have a curved convex portion 117 on the upper surface.
  • the lower surface of the first holding portion 101B can be appropriately deformed, and the central portions of the first substrate W1 and the second substrate W2 can be appropriately brought into contact with each other.
  • the joining device (for example, the joining device 41) according to the embodiment includes a first holding portion (for example, a first holding portion 101) and a second holding portion (for example, a second holding portion). 201), a moving mechanism (moving mechanism 203 as an example), a sealing member (seal members 141 and 141A as an example), and a control unit (control unit of the control device 70 as an example) are provided.
  • the first holding portion has a first suction region (for example, a first suction region 111) that sucks and holds the first substrate (for example, the first substrate W1).
  • the second holding portion is arranged below the first holding portion and has a second suction region (for example, a second suction region 211) that sucks and holds the second substrate (for example, the second substrate W2).
  • the moving mechanism moves the second holding portion at least up and down.
  • the seal member is provided on one of the first holding portion and the second holding portion, and surrounds one of the first suction region and the second suction region.
  • the control unit has a space forming process for forming a processing space isolated from the outside by bringing the second holding unit close to the first holding unit and surrounding both the first suction region and the second suction region with a sealing member. A joining process for joining the first substrate and the second substrate is performed in the processing space.
  • the joining process can be performed in a state where the processing space is depressurized, in other words, a state in which gas molecules are excluded from the processing space.
  • the progress of the so-called bonding wave in which the bonding region between the first substrate and the second substrate expands from the central portion of the first substrate and the second substrate toward the outer peripheral portion is hindered by the presence of gas molecules. ing.
  • the inhibition of the bonding wave by the gas molecules becomes more remarkable as the gap between the first substrate and the second substrate becomes narrower. This is because the narrower the gap between the first substrate and the second substrate, the more difficult it is for gas molecules to escape from between the first substrate and the second substrate.
  • the bonding process can be performed with the gap between the first substrate and the second substrate narrower.
  • the first substrate and the second substrate is deformed toward the other in order to bring the first substrate and the second substrate into contact with each other.
  • the narrower the gap between the first substrate and the second substrate the smaller the amount of deformation of the first substrate or the second substrate is, so that the distortion of the polymerized substrate which is the substrate after bonding can be suppressed to be small.
  • the sealing member may have an internal space (for example, internal spaces 142, 142A) formed of a flexible material and closed at least in a state where a processing space is formed.
  • an internal space for example, internal spaces 142, 142A
  • the joining device according to the embodiment may further include a seal pressure adjusting unit (for example, a seal pressure adjusting unit 146) for adjusting the pressure in the internal space.
  • a seal pressure adjusting unit for example, a seal pressure adjusting unit 1466 for adjusting the pressure in the internal space.
  • the pressure in the internal space can be adjusted.
  • the pressure difference between the inside and the outside of the processing space can prevent the first holding portion and the second holding portion from approaching each other due to the pressure in the internal space. Therefore, for example, the gap between the first substrate and the second substrate can be maintained at a desired value.
  • the internal space may be divided into a plurality of individual spaces (as an example, individual spaces 142a to 142c) arranged in the circumferential direction.
  • the seal pressure adjusting unit (for example, the individual pressure adjusting units 146a to 146c) may be able to individually adjust the pressure in the plurality of individual spaces.
  • the pressure of the plurality of individual spaces individually adjustable for example, when one of the first holding portion and the second holding portion is tilted with respect to the other, some of the individual spaces are individually adjusted.
  • the above inclination can be eliminated by adjusting the pressure in the space to be higher or lower.
  • the first holding portion and the second holding portion parallel to each other the first substrate and the second substrate can be appropriately bonded in the bonding process, so that a polymerized substrate with less distortion can be formed. Can be done.
  • the joining device may further include a rotation mechanism (as an example, a rotation mechanism 103) that rotates the first holding portion around a vertical axis.
  • a rotation mechanism as an example, a rotation mechanism 103 that rotates the first holding portion around a vertical axis.
  • the moving mechanism (as an example, the horizontal moving portion 232) may move the second holding portion horizontally.
  • the moving mechanism may move the second holding portion horizontally.
  • the joining device further includes a thickness measuring unit (as an example, a thickness measuring unit 401) for measuring the thickness of the first substrate held by the first holding portion and the second substrate held by the second holding portion. You may have it.
  • a thickness measuring unit as an example, a thickness measuring unit 401 for measuring the thickness of the first substrate held by the first holding portion and the second substrate held by the second holding portion. You may have it.
  • the thickness measuring portion By measuring the thickness of the first substrate and the second substrate using the thickness measuring portion, even if various first substrates and second substrates having different thicknesses are held by the first holding portion and the second holding portion.
  • the gap between the first substrate and the second substrate can be adjusted to an appropriate value.
  • the joining device is connected to the first holding portion or the second holding portion, and is connected to the upper surface of the first holding portion or the lower surface of the second holding portion in a pressure accumulating space (for example, the first accumulating space 121,
  • a housing having a second pressure accumulating space 221) (for example, the first housing 102 and a second housing 202) and a housing pressure adjusting unit for adjusting the pressure in the accumulating space (for example, a first housing pressure adjusting unit 124).
  • the second housing pressure adjusting unit 224) may be further provided.
  • control unit curves the first suction region or the second suction region by controlling the housing pressure adjusting unit and adjusting the pressure in the pressure accumulating space so as to be higher than the pressure in the processing space.
  • the first substrate and the second substrate may be brought into contact with each other.
  • the first substrate or the second substrate can be curved as a whole. Therefore, for example, it is possible to suppress local deformation of the first substrate or the second substrate as compared with the case where the central portion of the first substrate is pushed down by a rod-shaped member and brought into contact with the central portion of the second substrate. it can. Therefore, it is possible to form a polymerization substrate with less distortion.
  • the upper surface of the first holding portion or the lower surface of the second holding portion to which the housing is connected has a curved concave portion (concave portions 116, 216 as an example) or a convex portion (convex portion 117 as an example). May be good.
  • the concave portion or the convex portion By forming the concave portion or the convex portion, the lower surface of the first holding portion or the upper surface of the second holding portion can be appropriately deformed when the pressure accumulating space is pressurized. Therefore, the first substrate and the second substrate can be separated from each other. Can be properly contacted.
  • the sealing member may have an internal space (for example, internal spaces 142, 142A) formed of a flexible material and closed at least in a state where a processing space is formed.
  • the joining device may further include a seal pressure adjusting unit (for example, a seal pressure adjusting unit 146) for adjusting the pressure in the internal space.
  • the control unit bends the first holding portion or the second holding portion in a state where the internal space is pressurized so that the central portion of the first substrate and the central portion of the second substrate are brought into contact with each other. After that, the first substrate and the second substrate may be joined over the entire surface by controlling the seal pressure adjusting portion to reduce the pressure in the internal space.
  • the first holding portion and the second holding portion come close to each other due to the pressure difference between the inside and the outside of the processing space, so that the first substrate and the second substrate come into contact with each other on the entire surface. .. As a result, the first substrate and the second substrate can be joined on the entire surface.
  • the control unit may pressurize the first substrate and the second substrate after joining the first substrate and the second substrate on the entire surface in the joining process. By pressurizing the first substrate and the second substrate, the bonding strength between the first substrate and the second substrate can be increased.
  • the joining device may further include a decompression mechanism (for example, a decompression mechanism 205) that depressurizes the processing space.
  • the control unit may control the pressure reducing mechanism to reduce the pressure in the processing space and control the pressure adjusting unit in the housing to reduce the pressure in the accumulating space in the space forming process.
  • the pressure in the accumulator space is adjusted by controlling the housing pressure adjusting unit so that the pressure in the accumulator space matches the pressure in the processing space.
  • control unit may lower the pressure for adsorbing the first substrate by the first adsorption region and the pressure for adsorbing the second substrate by the second adsorption region to be lower than the pressure in the processing space. As a result, it is possible to prevent the first substrate and the second substrate from coming off from the first adsorption region and the second adsorption region.

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Abstract

This bonding device (41) comprises: a first retention part (101); a second retention part (201); a movement mechanism (203); a seal member (141); and a control unit. The first retention part (101) has a first adsorption region (111) in which a first substrate (W1) is adsorbed and retained. The second retention part (201) is disposed below the first retention part (101) and has a second adsorption region (211) in which a second substrate (W2) is adsorbed and retained. The movement mechanism causes the second retention part (201) to at least move up and down. The seal member is provided to either the first retention part (101) or the second retention part (201), and surrounds either the first adsorption region (111) or the second adsorption region (211). The control unit executes: a space formation process in which a processing space that is isolated from the outside is formed by bringing the second retention part (201) close to the first retention part (101) and surrounding both the first adsorption region (111) and the second adsorption region (211) with the seal member (141); and a bonding process in which the first substrate (W1) and the second substrate (W2) are bonded in the processing space.

Description

接合装置および接合方法Joining device and joining method
　本開示は、接合装置および接合方法に関する。 The present disclosure relates to a joining device and a joining method.
　従来、半導体ウェハ等の基板同士を接合することによって重合基板を作成する接合装置が知られている。 Conventionally, a joining device that creates a polymerized substrate by joining substrates such as semiconductor wafers is known.
特許第５２８２１００号公報Japanese Patent No. 5282100
　本開示は、歪みの少ない重合基板を作成することができる技術を提供する。 The present disclosure provides a technique capable of producing a polymerized substrate with less distortion.
　本開示の一態様による接合装置は、第１保持部と、第２保持部と、移動機構と、シール部材と、制御部とを備える。第１保持部は、第１基板を吸着保持する第１吸着領域を有する。第２保持部は、第１保持部の下方に配置され、第２基板を吸着保持する第２吸着領域を有する。移動機構は、第２保持部を少なくとも昇降移動させる。シール部材は、第１保持部および第２保持部の一方に設けられ、第１吸着領域および第２吸着領域の一方を取り囲む。制御部は、第２保持部を第１保持部に近接させて第１吸着領域および第２吸着領域の両方をシール部材で取り囲むことによって外部から隔離された処理空間を形成する空間形成処理と、処理空間において第１基板と第２基板とを接合する接合処理とを実行する。 The joining device according to one aspect of the present disclosure includes a first holding portion, a second holding portion, a moving mechanism, a seal member, and a control unit. The first holding portion has a first suction region that sucks and holds the first substrate. The second holding portion is arranged below the first holding portion and has a second suction region that sucks and holds the second substrate. The moving mechanism moves the second holding portion at least up and down. The seal member is provided on one of the first holding portion and the second holding portion, and surrounds one of the first suction region and the second suction region. The control unit has a space forming process for forming a processing space isolated from the outside by bringing the second holding unit close to the first holding unit and surrounding both the first suction region and the second suction region with a sealing member. A joining process for joining the first substrate and the second substrate is performed in the processing space.
　本開示によれば、歪みの少ない重合基板を作成することができる。 According to the present disclosure, it is possible to prepare a polymerized substrate with less distortion.
図１は、実施形態に係る接合システムの構成を示す模式図である。FIG. 1 is a schematic diagram showing a configuration of a joining system according to an embodiment. 図２は、実施形態に係る接合システムの構成を示す模式図である。FIG. 2 is a schematic view showing the configuration of the joining system according to the embodiment. 図３は、実施形態に係る第１基板および第２基板の接合前の状態を示す模式図である。FIG. 3 is a schematic view showing a state before joining the first substrate and the second substrate according to the embodiment. 図４は、実施形態に係る接合装置の構成を示す模式図である。FIG. 4 is a schematic view showing the configuration of the joining device according to the embodiment. 図５は、実施形態に係る第１保持部が湾曲する様子を示す模式図である。FIG. 5 is a schematic view showing how the first holding portion according to the embodiment is curved. 図６は、実施形態に係るシール部材の構成を示す模式図である。FIG. 6 is a schematic view showing the configuration of the seal member according to the embodiment. 図７は、実施形態に係る接合システムが実行する処理の手順を示すフローチャートである。FIG. 7 is a flowchart showing a procedure of processing executed by the joining system according to the embodiment. 図８は、接合装置の動作例を示す図である。FIG. 8 is a diagram showing an operation example of the joining device. 図９は、接合装置の動作例を示す図である。FIG. 9 is a diagram showing an operation example of the joining device. 図１０は、接合装置の動作例を示す図である。FIG. 10 is a diagram showing an operation example of the joining device. 図１１は、接合装置の動作例を示す図である。FIG. 11 is a diagram showing an operation example of the joining device. 図１２は、変形例に係るシール部材の構成を示す模式図である。FIG. 12 is a schematic view showing the configuration of the seal member according to the modified example. 図１３は、他の実施形態に係る接合装置が備える第１保持部の構成を示す図である。FIG. 13 is a diagram showing a configuration of a first holding portion included in the joining device according to another embodiment. 図１４は、他の実施形態に係る第１保持部が湾曲する様子を示す模式図である。FIG. 14 is a schematic view showing how the first holding portion according to another embodiment is curved.
　以下に、本開示による接合装置および接合方法を実施するための形態（以下、「実施形態」と記載する）について図面を参照しつつ詳細に説明する。なお、この実施形態により本開示による接合装置および接合方法が限定されるものではない。また、各実施形態は、処理内容を矛盾させない範囲で適宜組み合わせることが可能である。また、以下の各実施形態において同一の部位には同一の符号を付し、重複する説明は省略される。 Hereinafter, a mode for carrying out the joining apparatus and the joining method according to the present disclosure (hereinafter, referred to as “the embodiment”) will be described in detail with reference to the drawings. It should be noted that this embodiment does not limit the joining device and joining method according to the present disclosure. In addition, each embodiment can be appropriately combined as long as the processing contents do not contradict each other. Further, in each of the following embodiments, the same parts are designated by the same reference numerals, and duplicate description is omitted.
　また、以下参照する各図面では、説明を分かりやすくするために、互いに直交するＸ軸方向、Ｙ軸方向およびＺ軸方向を規定し、Ｚ軸正方向を鉛直上向き方向とする直交座標系を示す場合がある。また、鉛直軸を回転中心とする回転方向をθ方向と呼ぶ場合がある。 Further, in each drawing referred to below, in order to make the explanation easy to understand, an orthogonal coordinate system in which the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to each other are defined and the Z-axis positive direction is the vertically upward direction is shown. In some cases. Further, the rotation direction centered on the vertical axis may be referred to as the θ direction.
＜接合システムの構成＞
　まず、実施形態に係る接合システムの構成について図１～図３を参照して説明する。図１および図２は、実施形態に係る接合システムの構成を示す模式図である。また、図３は、実施形態に係る第１基板および第２基板の接合前の状態を示す模式図である。 <Structure of joining system>
First, the configuration of the joining system according to the embodiment will be described with reference to FIGS. 1 to 3. 1 and 2 are schematic views showing the configuration of the joining system according to the embodiment. Further, FIG. 3 is a schematic view showing a state before joining the first substrate and the second substrate according to the embodiment.
　図１に示す接合システム１は、第１基板Ｗ１と第２基板Ｗ２とを接合することによって重合基板Ｔを形成する（図３参照）。 The bonding system 1 shown in FIG. 1 forms a polymerization substrate T by bonding the first substrate W1 and the second substrate W2 (see FIG. 3).
　第１基板Ｗ１および第２基板Ｗ２は、たとえばシリコンウェハや化合物半導体ウェハなどの半導体基板に複数の電子回路が形成された基板である。第１基板Ｗ１および第２基板Ｗ２は、略同径である。なお、第１基板Ｗ１および第２基板Ｗ２の一方は、たとえば電子回路が形成されていない基板であってもよい。 The first substrate W1 and the second substrate W2 are substrates in which a plurality of electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer. The first substrate W1 and the second substrate W2 have substantially the same diameter. One of the first substrate W1 and the second substrate W2 may be, for example, a substrate on which no electronic circuit is formed.
　以下では、図３に示すように、第１基板Ｗ１の板面のうち、第２基板Ｗ２と接合される側の板面を「接合面Ｗ１ｊ」と記載し、接合面Ｗ１ｊとは反対側の板面を「非接合面Ｗ１ｎ」と記載する。また、第２基板Ｗ２の板面のうち、第１基板Ｗ１と接合される側の板面を「接合面Ｗ２ｊ」と記載し、接合面Ｗ２ｊとは反対側の板面を「非接合面Ｗ２ｎ」と記載する。 In the following, as shown in FIG. 3, among the plate surfaces of the first substrate W1, the plate surface on the side to be joined to the second substrate W2 is described as "joining surface W1j", which is opposite to the joining surface W1j. The plate surface is described as "non-bonded surface W1n". Further, among the plate surfaces of the second substrate W2, the plate surface on the side to be joined to the first substrate W1 is described as "joining surface W2j", and the plate surface on the side opposite to the joining surface W2j is "non-joining surface W2n". ".
　図１に示すように、接合システム１は、搬入出ステーション２と、処理ステーション３とを備える。搬入出ステーション２は、処理ステーション３のＸ軸負方向側に配置され、処理ステーション３と一体的に接続される。 As shown in FIG. 1, the joining system 1 includes a loading / unloading station 2 and a processing station 3. The carry-in / out station 2 is arranged on the negative side of the X-axis of the processing station 3 and is integrally connected to the processing station 3.
　搬入出ステーション２は、載置台１０と、搬送領域２０とを備える。載置台１０は、複数の載置板１１を備える。各載置板１１には、複数枚（たとえば、２５枚）の基板を水平状態で収容するカセットＣ１～Ｃ４がそれぞれ載置される。カセットＣ１は複数枚の第１基板Ｗ１を収容可能であり、カセットＣ２は複数枚の第２基板Ｗ２を収容可能であり、カセットＣ３は複数枚の重合基板Ｔを収容可能である。カセットＣ４は、たとえば、不具合が生じた基板を回収するためのカセットである。なお、載置板１１に載置されるカセットＣ１～Ｃ４の個数は、図示のものに限定されない。 The loading / unloading station 2 includes a mounting table 10 and a transport area 20. The mounting table 10 includes a plurality of mounting plates 11. Cassettes C1 to C4 for horizontally accommodating a plurality of (for example, 25) substrates are mounted on each mounting plate 11. The cassette C1 can accommodate a plurality of first substrates W1, the cassette C2 can accommodate a plurality of second substrates W2, and the cassette C3 can accommodate a plurality of polymerization substrates T. The cassette C4 is, for example, a cassette for collecting a defective substrate. The number of cassettes C1 to C4 mounted on the mounting plate 11 is not limited to the one shown in the figure.
　搬送領域２０は、載置台１０のＸ軸正方向側に隣接して配置される。搬送領域２０には、Ｙ軸方向に延在する搬送路２１と、搬送路２１に沿って移動可能な搬送装置２２とが設けられる。搬送装置２２は、Ｙ軸方向だけでなく、Ｘ軸方向にも移動可能かつＺ軸周りに旋回可能である。搬送装置２２は、載置板１１に載置されたカセットＣ１～Ｃ４と、後述する処理ステーション３の第３処理ブロックＧ３との間で、第１基板Ｗ１、第２基板Ｗ２および重合基板Ｔの搬送を行う。 The transport area 20 is arranged adjacent to the X-axis positive direction side of the mounting table 10. The transport region 20 is provided with a transport path 21 extending in the Y-axis direction and a transport device 22 that can move along the transport path 21. The transport device 22 can move not only in the Y-axis direction but also in the X-axis direction and can rotate around the Z-axis. The transfer device 22 is formed between the cassettes C1 to C4 mounted on the mounting plate 11 and the third processing block G3 of the processing station 3, which will be described later, of the first substrate W1, the second substrate W2, and the polymerization substrate T. Carry out.
　処理ステーション３には、たとえば３つの処理ブロックＧ１，Ｇ２，Ｇ３が設けられる。第１処理ブロックＧ１は、処理ステーション３の正面側（図１のＹ軸負方向側）に配置される。また、第２処理ブロックＧ２は、処理ステーション３の背面側（図１のＹ軸正方向側）に配置され、第３処理ブロックＧ３は、処理ステーション３の搬入出ステーション２側（図１のＸ軸負方向側）に配置される。 The processing station 3 is provided with, for example, three processing blocks G1, G2, and G3. The first processing block G1 is arranged on the front side (Y-axis negative direction side in FIG. 1) of the processing station 3. Further, the second processing block G2 is arranged on the back side of the processing station 3 (the positive direction side of the Y axis in FIG. 1), and the third processing block G3 is on the loading / unloading station 2 side of the processing station 3 (X in FIG. 1). It is placed on the negative axis side).
　第１処理ブロックＧ１には、第１基板Ｗ１および第２基板Ｗ２の接合面Ｗ１ｊ，Ｗ２ｊを改質する表面改質装置３０が配置される。表面改質装置３０は、第１基板Ｗ１および第２基板Ｗ２の接合面Ｗ１ｊ，Ｗ２ｊにおけるＳｉＯ２の結合を切断して単結合のＳｉＯとすることで、その後親水化され易くするように接合面Ｗ１ｊ，Ｗ２ｊを改質する。 A surface reforming device 30 that modifies the joint surfaces W1j and W2j of the first substrate W1 and the second substrate W2 is arranged in the first processing block G1. The surface modifier 30 cuts the bond of SiO2 on the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2 to form a single-bonded SiO, so that the bonding surface W1j can be easily hydrophilized thereafter. , W2j is modified.
　具体的には、表面改質装置３０では、たとえば減圧雰囲気下において処理ガスである酸素ガスまたは窒素ガスが励起されてプラズマ化され、イオン化される。そして、かかる酸素イオンまたは窒素イオンが、第１基板Ｗ１および第２基板Ｗ２の接合面Ｗ１ｊ，Ｗ２ｊに照射されることにより、接合面Ｗ１ｊ，Ｗ２ｊがプラズマ処理されて改質される。 Specifically, in the surface reformer 30, for example, oxygen gas or nitrogen gas, which is a processing gas, is excited to be turned into plasma and ionized in a reduced pressure atmosphere. Then, by irradiating the joint surfaces W1j and W2j of the first substrate W1 and the second substrate W2 with such oxygen ions or nitrogen ions, the joint surfaces W1j and W2j are plasma-treated and modified.
　第２処理ブロックＧ２には、表面親水化装置４０と、接合装置４１とが配置される。表面親水化装置４０は、たとえば純水によって第１基板Ｗ１および第２基板Ｗ２の接合面Ｗ１ｊ，Ｗ２ｊを親水化するとともに、接合面Ｗ１ｊ，Ｗ２ｊを洗浄する。具体的には、表面親水化装置４０は、たとえばスピンチャックに保持された第１基板Ｗ１または第２基板Ｗ２を回転させながら、当該第１基板Ｗ１または第２基板Ｗ２上に純水を供給する。これにより、第１基板Ｗ１または第２基板Ｗ２上に供給された純水が第１基板Ｗ１または第２基板Ｗ２の接合面Ｗ１ｊ，Ｗ２ｊ上を拡散し、接合面Ｗ１ｊ，Ｗ２ｊが親水化される。 A surface hydrophilizing device 40 and a joining device 41 are arranged in the second processing block G2. The surface hydrophilization device 40 hydrolyzes the joint surfaces W1j and W2j of the first substrate W1 and the second substrate W2 with pure water, and cleans the joint surfaces W1j and W2j. Specifically, the surface hydrophilization device 40 supplies pure water onto the first substrate W1 or the second substrate W2 while rotating the first substrate W1 or the second substrate W2 held by the spin chuck, for example. .. As a result, the pure water supplied on the first substrate W1 or the second substrate W2 diffuses on the joint surfaces W1j and W2j of the first substrate W1 or the second substrate W2, and the joint surfaces W1j and W2j are hydrophilized. ..
　接合装置４１は、親水化された第１基板Ｗ１と第２基板Ｗ２とを分子間力により接合する。かかる接合装置４１の構成については、後述する。 The joining device 41 joins the hydrophilized first substrate W1 and the second substrate W2 by an intermolecular force. The configuration of the joining device 41 will be described later.
　第３処理ブロックＧ３には、図２に示すように、第１基板Ｗ１、第２基板Ｗ２および重合基板Ｔのトランジション装置５０，５１が、下から順に設けられる。 As shown in FIG. 2, the third processing block G3 is provided with transition devices 50 and 51 of the first substrate W1, the second substrate W2, and the polymerization substrate T in order from the bottom.
　第１処理ブロックＧ１、第２処理ブロックＧ２および第３処理ブロックＧ３に囲まれた領域には、搬送領域６０が形成される。搬送領域６０には、搬送装置６１が配置される。搬送装置６１は、たとえば鉛直方向、水平方向および鉛直軸周りに移動自在な搬送アームを有する。かかる搬送装置６１は、搬送領域６０内を移動し、搬送領域６０に隣接する第１処理ブロックＧ１、第２処理ブロックＧ２および第３処理ブロックＧ３内の所定の装置に第１基板Ｗ１、第２基板Ｗ２および重合基板Ｔを搬送する。 A transport region 60 is formed in a region surrounded by the first processing block G1, the second processing block G2, and the third processing block G3. A transport device 61 is arranged in the transport region 60. The transport device 61 has, for example, a transport arm that is movable in the vertical direction, the horizontal direction, and around the vertical axis. The transfer device 61 moves in the transfer area 60, and the first substrate W1 and the second are connected to predetermined devices in the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the transport area 60. The substrate W2 and the polymerization substrate T are conveyed.
　また、接合システム１は、制御装置７０を備える。制御装置７０は、接合システム１の動作を制御する。かかる制御装置７０は、たとえばコンピュータであり、図示しない制御部および記憶部を備える。制御部は、ＣＰＵ（Central　Processing　Unit）、ＲＯＭ（Read　Only　Memory）、ＲＡＭ（Random　Access　Memory）、入出力ポートなどを有するマイクロコンピュータや各種の回路を含む。かかるマイクロコンピュータのＣＰＵは、ＲＯＭに記憶されているプログラムを読み出して実行することにより、後述する制御を実現する。また、記憶部は、たとえば、ＲＡＭ、フラッシュメモリ（Flash　Memory）等の半導体メモリ素子、または、ハードディスク、光ディスク等の記憶装置によって実現される。 Further, the joining system 1 includes a control device 70. The control device 70 controls the operation of the joining system 1. Such a control device 70 is, for example, a computer, and includes a control unit and a storage unit (not shown). The control unit includes a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input / output port, and various circuits. The CPU of such a microcomputer realizes the control described later by reading and executing the program stored in the ROM. Further, the storage unit is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.
　なお、かかるプログラムは、コンピュータによって読み取り可能な記録媒体に記録されていたものであって、その記録媒体から制御装置７０の記憶部にインストールされたものであってもよい。コンピュータによって読み取り可能な記録媒体としては、例えばハードディスク（ＨＤ）、フレキシブルディスク（ＦＤ）、コンパクトディスク（ＣＤ）、マグネットオプティカルディスク（ＭＯ）、メモリカードなどがある。 The program may be recorded on a recording medium that can be read by a computer, and may be installed from the recording medium in the storage unit of the control device 70. Recording media that can be read by a computer include, for example, a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.
＜接合装置の構成＞
　次に、接合装置４１の構成について図４を参照して説明する。図４は、実施形態に係る接合装置４１の構成を示す模式図である。 <Structure of joining device>
Next, the configuration of the joining device 41 will be described with reference to FIG. FIG. 4 is a schematic view showing the configuration of the joining device 41 according to the embodiment.
　図４に示すように、実施形態に係る接合装置４１は、第１保持部１０１と、第１筐体１０２と、回転機構１０３と、シール機構１０４とを備える。また、接合装置４１は、第２保持部２０１と、第２筐体２０２と、移動機構２０３と、排気機構２０４と、減圧機構２０５とを備える。また、接合装置４１は、厚み測定部４０１を備える。 As shown in FIG. 4, the joining device 41 according to the embodiment includes a first holding portion 101, a first housing 102, a rotation mechanism 103, and a sealing mechanism 104. Further, the joining device 41 includes a second holding portion 201, a second housing 202, a moving mechanism 203, an exhaust mechanism 204, and a decompression mechanism 205. Further, the joining device 41 includes a thickness measuring unit 401.
（第１保持部１０１）
　第１保持部１０１は、第１基板Ｗ１を保持する。具体的には、第１保持部１０１は、第１基板Ｗ１を吸着保持する第１吸着領域１１１を下面に有している。第１吸着領域１１１は、第１保持部１０１の内部に形成された経路部１１２を介して真空ポンプ等の吸引装置１１４に接続される。第１保持部１０１は、吸引装置１１４を用いて第１吸着領域１１１を真空引きすることにより、第１基板Ｗ１の上面全体を吸着保持する。 (First holding unit 101)
The first holding unit 101 holds the first substrate W1. Specifically, the first holding portion 101 has a first suction region 111 for sucking and holding the first substrate W1 on the lower surface. The first suction region 111 is connected to a suction device 114 such as a vacuum pump via a path portion 112 formed inside the first holding portion 101. The first holding portion 101 sucks and holds the entire upper surface of the first substrate W1 by evacuating the first suction region 111 using the suction device 114.
　第１吸着領域１１１は、たとえば、第１基板Ｗ１の上面（非接合面Ｗ１ｎ）に接触する複数のピンと、第１基板Ｗ１の裏面（非接合面Ｗ１ｎ）の外周を支持する環状のリブとを備える構成であってもよい。この場合、複数のピンと環状のリブと第１基板Ｗ１とで形成される空間が吸引装置１１４によって真空引きされることで、第１吸着領域１１１に第１基板Ｗ１が吸着保持される。また、第１吸着領域１１１は、たとえば炭化ケイ素等の多孔質体で形成されてもよい。この場合、多孔質体に形成される細孔を介して第１基板Ｗ１が吸引されることで、第１吸着領域１１１に第１基板Ｗ１が吸着保持される。また、第１吸着領域１１１は、第１基板Ｗ１を静電吸着するものであってもよい。 The first adsorption region 111 includes, for example, a plurality of pins in contact with the upper surface (non-bonding surface W1n) of the first substrate W1 and an annular rib supporting the outer periphery of the back surface (non-bonding surface W1n) of the first substrate W1. It may be provided. In this case, the space formed by the plurality of pins, the annular ribs, and the first substrate W1 is evacuated by the suction device 114, so that the first substrate W1 is suction-held in the first suction region 111. Further, the first adsorption region 111 may be formed of a porous material such as silicon carbide. In this case, the first substrate W1 is adsorbed and held in the first adsorption region 111 by sucking the first substrate W1 through the pores formed in the porous body. Further, the first adsorption region 111 may electrostatically adsorb the first substrate W1.
　第１保持部１０１の上面には、曲面状の凹部１１６が形成される。凹部１１６は、第１吸着領域１１１の直上に形成されており、その最下点は第１吸着領域１１１の中心部（言い換えれば、第１基板Ｗ１の中心部）と一致する。凹部１１６の機能については後述する。 A curved concave portion 116 is formed on the upper surface of the first holding portion 101. The recess 116 is formed directly above the first suction region 111, and its lowest point coincides with the central portion of the first suction region 111 (in other words, the central portion of the first substrate W1). The function of the recess 116 will be described later.
　第１保持部１０１は、例えばアルミナセラミックやＳｉＣ（炭化ケイ素）などセラミック材料により形成される。このため、第１保持部１０１は鉛直方向及び水平方向に伸縮自在であり、また高精度な平面、且つ、高い復元性を実現することができる。 The first holding portion 101 is formed of a ceramic material such as alumina ceramic or SiC (silicon carbide). Therefore, the first holding portion 101 can be expanded and contracted in the vertical direction and the horizontal direction, and can realize a highly accurate flat surface and high resilience.
（第１筐体１０２）
　第１筐体１０２は、たとえば第１保持部１０１の上面に接続されて、第１保持部１０１を上方から支持する。第１筐体１０２は、第１保持部１０１の上面との間に第１蓄圧空間１２１を有する。第１蓄圧空間１２１は、第１筐体１０２に形成された下方に向けて開口する内部空間（凹部）と、第１保持部１０１の上面とによって形成される密閉された空間である。第１蓄圧空間１２１は、第１筐体１０２の内部に形成された経路部１２２を介して第１筐体調圧部１２４に接続される。第１筐体調圧部１２４は、経路部１２２を介して第１蓄圧空間１２１を排気することによって第１蓄圧空間１２１を減圧する。また、第１筐体調圧部１２４は、第１蓄圧空間１２１の排気量を調節することにより、第１蓄圧空間１２１の圧力を調節することができる。なお、第１蓄圧空間１２１は、経路部１２２を介して第１蓄圧空間１２１に空気や窒素等の気体を供給することによって第１蓄圧空間１２１を加圧することも可能である。この場合、第１筐体調圧部１２４は、第１蓄圧空間１２１に水等の液体を供給することによって第１蓄圧空間１２１の圧力を調節してもよい。 (First housing 102)
The first housing 102 is connected to, for example, the upper surface of the first holding portion 101 to support the first holding portion 101 from above. The first housing 102 has a first accumulator space 121 between the first housing 102 and the upper surface of the first holding portion 101. The first accumulator space 121 is a closed space formed by an internal space (recess) formed in the first housing 102 and opening downward, and an upper surface of the first holding portion 101. The first accumulator space 121 is connected to the first housing pressure adjusting unit 124 via a path portion 122 formed inside the first housing 102. The first housing pressure adjusting unit 124 decompresses the first pressure accumulating space 121 by exhausting the first accumulating space 121 via the path portion 122. Further, the pressure adjusting unit 124 of the first housing can adjust the pressure of the first pressure accumulating space 121 by adjusting the exhaust amount of the first accumulating space 121. The first accumulator space 121 can also pressurize the first accumulator space 121 by supplying a gas such as air or nitrogen to the first accumulator space 121 via the path portion 122. In this case, the pressure adjusting unit 124 of the first housing may adjust the pressure of the first pressure accumulating space 121 by supplying a liquid such as water to the first accumulating space 121.
　図５は、実施形態に係る第１保持部１０１が湾曲する様子を示す模式図である。後述するように、実施形態に係る接合装置４１は、第１基板Ｗ１と第２基板Ｗ２とを接合する際に、第１保持部１０１の下面、第２保持部２０１の上面およびシール部材１４１によって密閉される処理空間を形成する。また、この処理空間は、吸引装置２５４によって減圧される。 FIG. 5 is a schematic view showing how the first holding portion 101 according to the embodiment is curved. As will be described later, when the first substrate W1 and the second substrate W2 are joined, the joining device 41 according to the embodiment uses the lower surface of the first holding portion 101, the upper surface of the second holding portion 201, and the sealing member 141. Form a sealed processing space. Further, this processing space is decompressed by the suction device 254.
　制御装置７０は、第１筐体調圧部１２４を制御して、処理空間の圧力よりも高くなるように第１蓄圧空間１２１の圧力を調節する。これにより、図５に示すように、第１保持部１０１は、処理空間と第１蓄圧空間１２１との圧力差によって変形する。これに伴い、第１保持部１０１の下面に設けられた第１吸着領域１１１および第１吸着領域１１１に吸着保持された第１基板Ｗ１が下方に向かって曲面状に湾曲する。実施形態に係る接合装置４１では、上記のように第１吸着領域１１１を第１基板Ｗ１とともに下方に向かって曲面状に湾曲させることで、第１基板Ｗ１と第２基板Ｗ２とを接触させる。 The control device 70 controls the pressure adjusting unit 124 of the first housing to adjust the pressure of the first accumulating space 121 so as to be higher than the pressure of the processing space. As a result, as shown in FIG. 5, the first holding portion 101 is deformed by the pressure difference between the processing space and the first accumulating space 121. Along with this, the first suction region 111 provided on the lower surface of the first holding portion 101 and the first substrate W1 suction-held by the first suction region 111 are curved downward. In the joining device 41 according to the embodiment, the first substrate W1 and the second substrate W2 are brought into contact with each other by bending the first suction region 111 together with the first substrate W1 in a curved surface downward as described above.
　上述したように、第１保持部１０１の上面には、第１吸着領域１１１の中心部の直上を最下点とする曲面状の凹部１１６が形成されている。これにより、第１保持部１０１の下面を適切に変形させることができ、第１基板Ｗ１および第２基板Ｗ２の中心部同士を適切に接触させることができる。 As described above, on the upper surface of the first holding portion 101, a curved concave portion 116 having a lowermost point directly above the central portion of the first suction region 111 is formed. As a result, the lower surface of the first holding portion 101 can be appropriately deformed, and the central portions of the first substrate W1 and the second substrate W2 can be appropriately brought into contact with each other.
（回転機構１０３）
　回転機構１０３は、第１筐体１０２の上方に配置された梁部１３１に固定されており、第１筐体１０２を上方から回転可能に支持する。回転機構１０３は、第１筐体１０２の上面に接続される軸部１３２を鉛直軸まわりに回転させる駆動部を有しており、かかる駆動部を用いて軸部１３２を回転させることにより、第１保持部１０１および第１筐体１０２を鉛直軸まわりに回転させることができる。 (Rotating mechanism 103)
The rotation mechanism 103 is fixed to a beam portion 131 arranged above the first housing 102, and rotatably supports the first housing 102 from above. The rotation mechanism 103 has a drive unit that rotates the shaft portion 132 connected to the upper surface of the first housing 102 around a vertical shaft, and by rotating the shaft portion 132 using such a drive unit, the first 1 The holding portion 101 and the first housing 102 can be rotated around a vertical axis.
（シール機構１０４）
　シール機構１０４は、シール部材１４１と、接続管１４４と、シール調圧部１４６と、圧力測定部１４８とを備える。 (Seal mechanism 104)
The seal mechanism 104 includes a seal member 141, a connecting pipe 144, a seal pressure adjusting unit 146, and a pressure measuring unit 148.
　シール部材１４１は、たとえば樹脂等の可撓性材料で形成された環状のシール部材（Ｏリング）である。シール部材１４１は、第１吸着領域１１１よりも大径であり、第１吸着領域１１１を取り囲むように第１保持部１０１の下面に設けられる。 The seal member 141 is an annular seal member (O-ring) made of a flexible material such as resin. The seal member 141 has a diameter larger than that of the first suction region 111, and is provided on the lower surface of the first holding portion 101 so as to surround the first suction region 111.
　シール部材１４１は、環状の内部空間１４２を有する。内部空間１４２は、第１保持部１０１の内部に形成された経路部１１８および経路部１１８に接続された接続管１４４を介してシール調圧部１４６に接続される。 The seal member 141 has an annular internal space 142. The internal space 142 is connected to the seal pressure adjusting portion 146 via a path portion 118 formed inside the first holding portion 101 and a connecting pipe 144 connected to the path portion 118.
　シール調圧部１４６は、接続管１４４および経路部１１８を介してシール部材１４１の内部空間１４２に空気や窒素等の気体を供給することにより、内部空間１４２を加圧することができる。また、シール調圧部１４６は、内部空間１４２に供給する気体の流量を調節することにより、内部空間１４２の圧力を調節することができる。 The seal pressure adjusting portion 146 can pressurize the internal space 142 by supplying a gas such as air or nitrogen to the internal space 142 of the seal member 141 via the connecting pipe 144 and the path portion 118. Further, the seal pressure adjusting unit 146 can adjust the pressure in the internal space 142 by adjusting the flow rate of the gas supplied to the internal space 142.
　なお、シール調圧部１４６は、内部空間１４２に水等の液体を供給することによって内部空間１４２の圧力を調節してもよい。 The seal pressure adjusting unit 146 may adjust the pressure in the internal space 142 by supplying a liquid such as water to the internal space 142.
　圧力測定部１４８は、接続管１４４に設けられ、内部空間１４２の圧力を測定する。圧力測定部１４８による測定結果は、制御装置７０に入力される。 The pressure measuring unit 148 is provided in the connecting pipe 144 and measures the pressure in the internal space 142. The measurement result by the pressure measuring unit 148 is input to the control device 70.
　ここで、シール機構１０４の構成について図６を参照してより具体的に説明する。図６は、シール機構１０４の構成を示す模式図である。なお、図６には、シール機構１０４を下方から見た模式図を示している。 Here, the configuration of the seal mechanism 104 will be described more specifically with reference to FIG. FIG. 6 is a schematic view showing the configuration of the seal mechanism 104. Note that FIG. 6 shows a schematic view of the seal mechanism 104 as viewed from below.
　図６に示すように、シール部材１４１の内部空間１４２は、シール部材１４１の周方向に沿って並ぶ複数の個別空間１４２ａ～１４２ｃに分割されている。また、シール調圧部１４６は、複数の個別空間１４２ａ～１４２ｃに対応する複数の個別調圧部１４６ａ～１４６ｃを備える。 As shown in FIG. 6, the internal space 142 of the seal member 141 is divided into a plurality of individual spaces 142a to 142c arranged along the circumferential direction of the seal member 141. Further, the seal pressure adjusting unit 146 includes a plurality of individual pressure adjusting units 146a to 146c corresponding to the plurality of individual spaces 142a to 142c.
　具体的には、個別調圧部１４６ａは、接続管１４４ａを介して個別空間１４２ａに接続される。接続管１４４ａには圧力測定部１４８ａが設けられる。個別調圧部１４６ｂは、接続管１４４ｂを介して個別空間１４２ｂに接続される。接続管１４４ｂには圧力測定部１４８ｂが設けられる。個別調圧部１４６ｃは、接続管１４４ｃを介して個別空間１４２ｃに接続される。接続管１４４ｃには圧力測定部１４８ｃが設けられる。 Specifically, the individual pressure regulating unit 146a is connected to the individual space 142a via the connecting pipe 144a. A pressure measuring unit 148a is provided on the connecting pipe 144a. The individual pressure adjusting unit 146b is connected to the individual space 142b via the connecting pipe 144b. A pressure measuring unit 148b is provided on the connecting pipe 144b. The individual pressure adjusting unit 146c is connected to the individual space 142c via the connecting pipe 144c. A pressure measuring unit 148c is provided on the connecting pipe 144c.
　このように、シール部材１４１の内部空間１４２は、周方向に並ぶ複数の個別空間１４２ａ～１４２ｃに分割されており、シール調圧部１４６は、複数の個別空間１４２ａ～１４２ｃの圧力を個別に調節可能である。 In this way, the internal space 142 of the seal member 141 is divided into a plurality of individual spaces 142a to 142c arranged in the circumferential direction, and the seal pressure adjusting unit 146 individually adjusts the pressure of the plurality of individual spaces 142a to 142c. It is possible.
　また、接合装置４１は、複数の距離測定部１５０ａ～１５０ｃを備える。複数の距離測定部１５０ａ～１５０ｃは、たとえば、第１保持部１０１の側面に対して均等な間隔で設けられる。 Further, the joining device 41 includes a plurality of distance measuring units 150a to 150c. The plurality of distance measuring units 150a to 150c are provided, for example, at equal intervals with respect to the side surface of the first holding unit 101.
　複数の距離測定部１５０ａ～１５０ｃは、複数の個別空間１４２ａ～１４２ｃに対応して設けられる。すなわち、距離測定部１５０ａは、個別空間１４２ａが位置する側の第１保持部１０１の側面に設けられ、距離測定部１５０ｂは、個別空間１４２ｂが位置する側の第１保持部１０１の側面に設けられる。また、距離測定部１５０ｃは、個別空間１４２ｃが位置する側の第１保持部１０１の側面に設けられる。 The plurality of distance measuring units 150a to 150c are provided corresponding to the plurality of individual spaces 142a to 142c. That is, the distance measuring unit 150a is provided on the side surface of the first holding unit 101 on the side where the individual space 142a is located, and the distance measuring unit 150b is provided on the side surface of the first holding unit 101 on the side where the individual space 142b is located. Be done. Further, the distance measuring unit 150c is provided on the side surface of the first holding unit 101 on the side where the individual space 142c is located.
　これら複数の距離測定部１５０ａ～１５０ｃは、たとえばレーザ変位計である。たとえば、後述する第２保持部２０１には第２保持部２０１の上面と同じ高さを有する複数の平面部が複数の距離測定部１５０ａ～１５０ｃと対応づけて設けられている。複数の距離測定部１５０ａ～１５０ｃは、対応する平面部に向けてレーザ光を下方に照射し、その反射光を受光することで、第２保持部２０１の上面までの距離を測定する。複数の距離測定部１５０ａ～１５０ｃによる測定結果は、制御装置７０に入力される。 These plurality of distance measuring units 150a to 150c are, for example, laser displacement meters. For example, the second holding portion 201, which will be described later, is provided with a plurality of flat portions having the same height as the upper surface of the second holding portion 201 in association with the plurality of distance measuring units 150a to 150c. The plurality of distance measuring units 150a to 150c measure the distance to the upper surface of the second holding unit 201 by irradiating the corresponding flat surface portion with laser light downward and receiving the reflected light. The measurement results by the plurality of distance measuring units 150a to 150c are input to the control device 70.
　なお、ここでは、内部空間１４２が３つの個別空間１４２ａ～１４２ｃに分割される例を示したが、内部空間１４２の分割数は３つに限定されない。 Although the example in which the internal space 142 is divided into three individual spaces 142a to 142c is shown here, the number of divisions of the internal space 142 is not limited to three.
　また、ここでは、シール部材１４１が第１保持部１０１に設けられる場合の例を示したが、シール部材１４１は、第２保持部２０１に設けられてもよい。 Further, although an example of the case where the seal member 141 is provided in the first holding portion 101 is shown here, the seal member 141 may be provided in the second holding portion 201.
（第２保持部２０１）
　図４に示すように、第２保持部２０１は、第１保持部１０１の下方に配置され、第２基板Ｗ２を保持する。具体的には、第２保持部２０１は、第２基板Ｗ２を吸着保持する第２吸着領域２１１を上面に有している。第２吸着領域２１１は、第２保持部２０１の内部に形成された経路部２１２を介して真空ポンプ等の吸引装置２１４に接続される。第２保持部２０１は、吸引装置２１４を用いて第２吸着領域２１１を真空引きすることにより、第２基板Ｗ２の上面全体を吸着保持する。 (Second holding unit 201)
As shown in FIG. 4, the second holding portion 201 is arranged below the first holding portion 101 and holds the second substrate W2. Specifically, the second holding portion 201 has a second suction region 211 on the upper surface that sucks and holds the second substrate W2. The second suction region 211 is connected to a suction device 214 such as a vacuum pump via a path portion 212 formed inside the second holding portion 201. The second holding unit 201 sucks and holds the entire upper surface of the second substrate W2 by evacuating the second suction region 211 using the suction device 214.
　第１吸着領域１１１と同様、第２吸着領域２１１は、複数のピンと環状のリブとを備える構成であってもよいし、多孔質体で形成されてもよい。また、第２吸着領域２１１は、第２基板Ｗ２を静電吸着するものであってもよい。 Similar to the first adsorption region 111, the second adsorption region 211 may be configured to include a plurality of pins and annular ribs, or may be formed of a porous body. Further, the second adsorption region 211 may electrostatically adsorb the second substrate W2.
　第２保持部２０１の下面には、曲面状の凹部２１６が形成される。凹部２１６は、第２吸着領域２１１の直下に形成されており、その頂点は第２吸着領域２１１の中心部（言い換えれば、第２基板Ｗ２の中心部）と一致する。凹部２１６の機能については後述する。 A curved concave portion 216 is formed on the lower surface of the second holding portion 201. The recess 216 is formed directly below the second suction region 211, and its apex coincides with the central portion of the second suction region 211 (in other words, the central portion of the second substrate W2). The function of the recess 216 will be described later.
　第２保持部２０１は、例えばアルミナセラミックやＳｉＣ（炭化ケイ素）などセラミック材料により形成される。このため、第２保持部２０１は鉛直方向及び水平方向に伸縮自在であり、また高精度な平面、且つ、高い復元性を実現することができる。 The second holding portion 201 is formed of a ceramic material such as alumina ceramic or SiC (silicon carbide). Therefore, the second holding portion 201 can be expanded and contracted in the vertical direction and the horizontal direction, and can realize a highly accurate flat surface and high resilience.
（第２筐体２０２）
　第２筐体２０２は、たとえば第２保持部２０１の下面に接続されて、第２保持部２０１を下方から支持する。第２筐体２０２は、第２保持部２０１の下面との間に第２蓄圧空間２２１を有する。第２蓄圧空間２２１は、第２筐体２０２に形成された凹部と、第２保持部２０１の下面とによって形成される密閉された空間である。第２筐体調圧部２２４は、経路部２２２を介して第２蓄圧空間２２１を排気することによって第２蓄圧空間２２１を減圧する。また、第２筐体調圧部２２４は、第２蓄圧空間２２１の排気量を調節することにより、第２蓄圧空間２２１の圧力を調節することができる。なお、第２蓄圧空間２２１は、経路部２２２を介して第２蓄圧空間２２１に空気や窒素等の気体を供給することによって第２蓄圧空間２２１を加圧することも可能である。この場合、第２筐体調圧部２２４は、第２蓄圧空間２２１に水等の液体を供給することによって第２蓄圧空間２２１の圧力を調節してもよい。 (Second housing 202)
The second housing 202 is connected to, for example, the lower surface of the second holding portion 201 to support the second holding portion 201 from below. The second housing 202 has a second accumulator space 221 between the second housing 202 and the lower surface of the second holding portion 201. The second accumulator space 221 is a closed space formed by the recess formed in the second housing 202 and the lower surface of the second holding portion 201. The second housing pressure adjusting section 224 depressurizes the second accumulating space 221 by exhausting the second accumulating space 221 via the path portion 222. Further, the pressure adjusting unit 224 of the second housing can adjust the pressure of the second pressure accumulating space 221 by adjusting the exhaust amount of the second accumulating space 221. The second accumulator space 221 can also pressurize the second accumulator space 221 by supplying a gas such as air or nitrogen to the second accumulator space 221 via the path portion 222. In this case, the pressure adjusting unit 224 of the second housing may adjust the pressure in the second accumulator space 221 by supplying a liquid such as water to the second accumulator space 221.
（移動機構２０３）
　移動機構２０３は、第２筐体２０２を昇降移動させる昇降移動部２３１と、第２筐体２０２を水平移動させる水平移動部２３２とを備える。 (Movement mechanism 203)
The moving mechanism 203 includes an elevating moving unit 231 that moves the second housing 202 up and down, and a horizontal moving unit 232 that horizontally moves the second housing 202.
　昇降移動部２３１は、鉛直方向に沿って延在し、第２筐体２０２を下方から支持するシャフト２３１ａと、シャフト２３１ａを昇降させるモータ等の駆動部２３１ｂとを備える。駆動部２３１ｂは、水平移動部２３２上に設けられる。水平移動部２３２は、昇降移動部２３１を水平方向、具体的には、Ｙ軸方向およびＸ軸方向に沿って移動させる。 The vertical movement unit 231 includes a shaft 231a that extends along the vertical direction and supports the second housing 202 from below, and a drive unit 231b such as a motor that raises and lowers the shaft 231a. The drive unit 231b is provided on the horizontal movement unit 232. The horizontal movement unit 232 moves the elevating movement unit 231 in the horizontal direction, specifically, along the Y-axis direction and the X-axis direction.
　このように、移動機構２０３は、第２保持部２０１および第２基板Ｗ２を昇降移動および水平移動させることができる。 In this way, the moving mechanism 203 can move the second holding portion 201 and the second substrate W2 up and down and horizontally.
（排気機構２０４）
　排気機構２０４は、環状の排気管２４１と、接続管２４２と、吸引装置２４４とを備える。排気管２４１は、第１保持部１０１の下面に設けられたシール部材１４１が第２保持部２０１の上面に接触することによって形成される処理空間を取り囲むように、第２保持部２０１の外周部に設けられる。排気管２４１は、シール部材１４１よりも外側、すなわち処理空間の外側に配置される。排気管２４１には、処理空間に向かって開口する複数の排気口２４１ａが排気管２４１の周方向に沿って形成される。接続管２４２は、排気管２４１と吸引装置２４４とを接続する。吸引装置２４４は、たとえば真空ポンプであり、排気管２４１を排気する。 (Exhaust mechanism 204)
The exhaust mechanism 204 includes an annular exhaust pipe 241, a connecting pipe 242, and a suction device 244. The exhaust pipe 241 is an outer peripheral portion of the second holding portion 201 so as to surround the processing space formed by the sealing member 141 provided on the lower surface of the first holding portion 101 coming into contact with the upper surface of the second holding portion 201. It is provided in. The exhaust pipe 241 is arranged outside the seal member 141, that is, outside the processing space. A plurality of exhaust ports 241a that open toward the processing space are formed in the exhaust pipe 241 along the circumferential direction of the exhaust pipe 241. The connection pipe 242 connects the exhaust pipe 241 and the suction device 244. The suction device 244 is, for example, a vacuum pump and exhausts the exhaust pipe 241.
　排気機構２０４は、上記のように構成されており、シール部材１４１が第２保持部２０１の上面に接触する際に発生するパーティクル、シール部材１４１が第２保持部２０１の上面から離れる際に発生するパーティクル、その他のパーティクルを吸引する。これにより、接合装置４１の清浄度を維持することができる。 The exhaust mechanism 204 is configured as described above, and particles generated when the seal member 141 comes into contact with the upper surface of the second holding portion 201, and generated when the seal member 141 separates from the upper surface of the second holding portion 201. Attracts particles and other particles. As a result, the cleanliness of the joining device 41 can be maintained.
（減圧機構２０５）
　減圧機構２０５は、処理空間を減圧する。具体的には、減圧機構２０５は、接続管２５２と、吸引装置２５４とを備える。接続管２５２は、第２保持部２０１の内部に形成された経路部２１８の一端に接続される。経路部２１８の他端は、シール部材１４１よりも内側、すなわち、処理空間の内部に設けられる。吸引装置２５４は、接続管２５２を介して経路部２１８に接続され、処理空間を吸引することによって処理空間を減圧する。 (Decompression mechanism 205)
The depressurizing mechanism 205 decompresses the processing space. Specifically, the decompression mechanism 205 includes a connecting pipe 252 and a suction device 254. The connecting pipe 252 is connected to one end of the path portion 218 formed inside the second holding portion 201. The other end of the path portion 218 is provided inside the seal member 141, that is, inside the processing space. The suction device 254 is connected to the path portion 218 via the connecting pipe 252, and the processing space is depressurized by sucking the processing space.
（厚み測定部４０１）
　測定部４０１は、第１保持部１０１に保持された第１基板Ｗ１および第２保持部２０１に保持された第２基板Ｗ２の厚みを測定する。 (Thickness measuring unit 401)
The measuring unit 401 measures the thickness of the first substrate W1 held by the first holding unit 101 and the thickness of the second substrate W2 held by the second holding unit 201.
　たとえば、測定部４０１は、第１変位センサと、第２変位センサと、移動機構とを備える。第１変位センサおよび第２変位センサは、たとえば、レーザ変位計である。第１変位センサは、第１基板Ｗ１の下面にレーザ光を照射し、その反射光を受光することで、第１基板Ｗ１の下面までの距離を測定する。第２変位センサは、第２基板Ｗ２の上面にレーザ光を照射し、その反射光を受光することで、第２基板Ｗ２の上面までの距離を測定する。移動機構は、第１変位センサおよび第２変位センサを水平方向（ここでは、Ｘ軸方向）に沿って移動させる。 For example, the measuring unit 401 includes a first displacement sensor, a second displacement sensor, and a moving mechanism. The first displacement sensor and the second displacement sensor are, for example, laser displacement meters. The first displacement sensor measures the distance to the lower surface of the first substrate W1 by irradiating the lower surface of the first substrate W1 with laser light and receiving the reflected light. The second displacement sensor measures the distance to the upper surface of the second substrate W2 by irradiating the upper surface of the second substrate W2 with a laser beam and receiving the reflected light. The moving mechanism moves the first displacement sensor and the second displacement sensor along the horizontal direction (here, the X-axis direction).
　厚み測定部４０１は、まず、第１変位センサおよび第２変位センサを退避位置から第１保持部１０１と第２保持部２０１との間の厚み測定位置まで移動させる。つづいて、第１変位センサから第１基板Ｗ１の下面までの距離を第１変位センサを用いて測定するとともに、第２変位センサから第２基板Ｗ２の上面までの距離を第２変位センサを用いて測定する。第１変位センサおよび第２変位センサによる測定結果は、制御装置７０に入力される。 First, the thickness measuring unit 401 moves the first displacement sensor and the second displacement sensor from the retracted position to the thickness measuring position between the first holding unit 101 and the second holding unit 201. Subsequently, the distance from the first displacement sensor to the lower surface of the first substrate W1 is measured using the first displacement sensor, and the distance from the second displacement sensor to the upper surface of the second substrate W2 is measured using the second displacement sensor. To measure. The measurement results by the first displacement sensor and the second displacement sensor are input to the control device 70.
　制御装置７０は、第１変位センサによる測定結果と、予め取得しておいた第１変位センサから第１保持部１０１の下面までの距離とを用いて第１基板Ｗ１の厚みを算出する。また、制御装置７０は、第２変位センサによる測定結果と、予め取得しておいた第２変位センサから第２保持部２０１の上面までの距離とを用いて第２基板Ｗ２の厚みを算出する。 The control device 70 calculates the thickness of the first substrate W1 by using the measurement result by the first displacement sensor and the distance from the first displacement sensor acquired in advance to the lower surface of the first holding portion 101. Further, the control device 70 calculates the thickness of the second substrate W2 by using the measurement result by the second displacement sensor and the distance from the second displacement sensor acquired in advance to the upper surface of the second holding portion 201. ..
　なお、ここでは図示を省略するが、接合装置４１は、図４に示す第１保持部１０１や第２保持部２０１等の前段に、トランジション、反転機構および位置調節機構等を備える。トランジションは、第１基板Ｗ１、第２基板Ｗ２および重合基板Ｔを一時的に載置する。位置調節機構は、第１基板Ｗ１および第２基板Ｗ２の水平方向の向きを調節する。反転機構は、第１基板Ｗ１の表裏を反転させる。 Although not shown here, the joining device 41 is provided with a transition, a reversing mechanism, a position adjusting mechanism, and the like in front of the first holding portion 101, the second holding portion 201, and the like shown in FIG. The transition temporarily mounts the first substrate W1, the second substrate W2, and the polymerization substrate T. The position adjusting mechanism adjusts the horizontal orientation of the first substrate W1 and the second substrate W2. The reversing mechanism reverses the front and back of the first substrate W1.
（接合システム１の具体的動作）
　次に、接合システム１の具体的な動作について図７～図１１を参照して説明する。図７は、接合システム１が実行する処理を示すフローチャートである。なお、図７に示す各種の処理は、制御装置７０による制御に基づいて実行される。また、図８～図１１は、接合装置４１の動作例を示す図である。 (Specific operation of joining system 1)
Next, the specific operation of the joining system 1 will be described with reference to FIGS. 7 to 11. FIG. 7 is a flowchart showing a process executed by the joining system 1. The various processes shown in FIG. 7 are executed based on the control by the control device 70. 8 to 11 are diagrams showing an operation example of the joining device 41.
　まず、複数枚の第１基板Ｗ１を収容したカセットＣ１、複数枚の第２基板Ｗ２を収容したカセットＣ２、および空のカセットＣ３が、搬入出ステーション２の所定の載置板１１に載置される。その後、搬送装置２２によりカセットＣ１内の第１基板Ｗ１が取り出され、第３処理ブロックＧ３に配置されたトランジション装置５０，５１に搬送される。 First, a cassette C1 containing a plurality of first substrates W1, a cassette C2 accommodating a plurality of second substrates W2, and an empty cassette C3 are placed on a predetermined mounting plate 11 of the loading / unloading station 2. To. After that, the first substrate W1 in the cassette C1 is taken out by the transfer device 22, and is transferred to the transition devices 50 and 51 arranged in the third processing block G3.
　次に、第１基板Ｗ１は、搬送装置６１によって第１処理ブロックＧ１の表面改質装置３０に搬送される。表面改質装置３０では、所定の減圧雰囲気下において、処理ガスである酸素ガスが励起されてプラズマ化され、イオン化される。この酸素イオンが第１基板Ｗ１の接合面に照射されて、当該接合面がプラズマ処理される。これにより、第１基板Ｗ１の接合面が改質される（ステップＳ１０１）。 Next, the first substrate W1 is conveyed to the surface modification device 30 of the first processing block G1 by the transfer device 61. In the surface reformer 30, oxygen gas, which is a processing gas, is excited to be turned into plasma and ionized in a predetermined reduced pressure atmosphere. The oxygen ions are irradiated to the joint surface of the first substrate W1, and the joint surface is subjected to plasma treatment. As a result, the joint surface of the first substrate W1 is modified (step S101).
　次に、第１基板Ｗ１は、搬送装置６１によって第２処理ブロックＧ２の表面親水化装置４０に搬送される。表面親水化装置４０では、スピンチャックに保持された第１基板Ｗ１を回転させながら、第１基板Ｗ１上に純水を供給する。これにより、第１基板Ｗ１の接合面が親水化される。また、当該純水によって、第１基板Ｗ１の接合面が洗浄される（ステップＳ１０２）。 Next, the first substrate W1 is conveyed to the surface hydrophilic device 40 of the second processing block G2 by the transfer device 61. In the surface hydrophilization device 40, pure water is supplied onto the first substrate W1 while rotating the first substrate W1 held by the spin chuck. As a result, the joint surface of the first substrate W1 is made hydrophilic. Further, the joint surface of the first substrate W1 is washed with the pure water (step S102).
　次に、第１基板Ｗ１は、搬送装置６１によって第２処理ブロックＧ２の接合装置４１に搬送される。接合装置４１に搬入された第１基板Ｗ１は、トランジションを介して位置調節機構に搬送され、位置調節機構によって水平方向の向きが調節される（ステップＳ１０３）。 Next, the first substrate W1 is conveyed to the joining device 41 of the second processing block G2 by the conveying device 61. The first substrate W1 carried into the joining device 41 is conveyed to the position adjusting mechanism via the transition, and the horizontal orientation is adjusted by the position adjusting mechanism (step S103).
　その後、位置調節機構から反転機構に第１基板Ｗ１が受け渡され、反転機構によって第１基板Ｗ１の表裏面が反転される（ステップＳ１０４）。具体的には、第１基板Ｗ１の接合面Ｗ１ｊが下方に向けられる。 After that, the first substrate W1 is handed over from the position adjusting mechanism to the reversing mechanism, and the front and back surfaces of the first substrate W1 are inverted by the reversing mechanism (step S104). Specifically, the joint surface W1j of the first substrate W1 is directed downward.
　その後、反転機構から第１保持部１０１に第１基板Ｗ１が受け渡される。第１基板Ｗ１は、ノッチ部を予め決められた方向に向けた状態で、第１保持部１０１に吸着保持される（ステップＳ１０５）。 After that, the first substrate W1 is delivered from the reversing mechanism to the first holding unit 101. The first substrate W1 is suction-held by the first holding portion 101 with the notch portion oriented in a predetermined direction (step S105).
　第１基板Ｗ１に対するステップＳ１０１～Ｓ１０５の処理と重複して、第２基板Ｗ２の処理が行われる。まず、搬送装置２２によりカセットＣ２内の第２基板Ｗ２が取り出され、第３処理ブロックＧ３に配置されたトランジション装置５０，５１に搬送される。 The processing of the second substrate W2 is performed in duplicate with the processing of steps S101 to S105 for the first substrate W1. First, the second substrate W2 in the cassette C2 is taken out by the transfer device 22, and is transferred to the transition devices 50 and 51 arranged in the third processing block G3.
　次に、第２基板Ｗ２は、搬送装置６１によって表面改質装置３０に搬送され、第２基板Ｗ２の接合面Ｗ２ｊが改質される（ステップＳ１０６）。その後、第２基板Ｗ２は、搬送装置６１によって表面親水化装置４０に搬送され、第２基板Ｗ２の接合面Ｗ２ｊが親水化されるとともに当該接合面が洗浄される（ステップＳ１０７）。 Next, the second substrate W2 is conveyed to the surface modification device 30 by the transfer device 61, and the joint surface W2j of the second substrate W2 is modified (step S106). After that, the second substrate W2 is transported to the surface hydrophilization device 40 by the transport device 61, the joint surface W2j of the second substrate W2 is hydrophilized, and the joint surface is washed (step S107).
　その後、第２基板Ｗ２は、搬送装置６１によって接合装置４１に搬送される。接合装置４１に搬入された第２基板Ｗ２は、トランジションを介して位置調節機構に搬送される。そして、位置調節機構によって、第２基板Ｗ２の水平方向の向きが調節される（ステップＳ１０８）。 After that, the second substrate W2 is conveyed to the joining device 41 by the conveying device 61. The second substrate W2 carried into the joining device 41 is conveyed to the position adjusting mechanism via the transition. Then, the horizontal orientation of the second substrate W2 is adjusted by the position adjusting mechanism (step S108).
　その後、第２基板Ｗ２は、第２保持部２０１に搬送され、ノッチ部を予め決められた方向に向けた状態で第２保持部２０１に吸着保持される（ステップＳ１０９）。 After that, the second substrate W2 is conveyed to the second holding portion 201, and is attracted and held by the second holding portion 201 with the notch portion oriented in a predetermined direction (step S109).
　つづいて、第１保持部１０１に保持された第１基板Ｗ１と第２保持部２０１に保持された第２基板Ｗ２との水平方向の位置調節が行われる（ステップＳ１１０）。 Subsequently, the horizontal position adjustment between the first substrate W1 held by the first holding portion 101 and the second substrate W2 held by the second holding portion 201 is performed (step S110).
　第１基板Ｗ１の接合面Ｗ１ｊには予め定められた複数の基準点が形成される。また、第２基板Ｗ２の接合面Ｗ１ｊにも、予め定められた複数の基準点が形成される。これら基準点としては、たとえば第１基板Ｗ１および第２基板Ｗ２上に形成された所定のパターンがそれぞれ用いられる。なお、基準点の数は任意に設定可能である。 A plurality of predetermined reference points are formed on the joint surface W1j of the first substrate W1. Further, a plurality of predetermined reference points are also formed on the joint surface W1j of the second substrate W2. As these reference points, for example, predetermined patterns formed on the first substrate W1 and the second substrate W2 are used, respectively. The number of reference points can be set arbitrarily.
　第１基板Ｗ１および第２基板Ｗ２の水平位置の調整は、たとえば、図示しない第１撮像部および第２撮像部を用いて行われる。第１撮像部は、第１基板Ｗ１の下面（接合面Ｗ１ｊ）に形成された基準点を撮像し、第２撮像部は、第２基板Ｗ２の上面（接合面Ｗ２ｊ）に形成された基準点を撮像する。 The horizontal positions of the first substrate W1 and the second substrate W2 are adjusted by using, for example, a first imaging unit and a second imaging unit (not shown). The first imaging unit images a reference point formed on the lower surface (joining surface W1j) of the first substrate W1, and the second imaging unit takes a reference point formed on the upper surface (joining surface W2j) of the second substrate W2. To image.
　第１撮像部および第２撮像部によって撮像された画像データは、制御装置７０に出力される。制御装置７０は、これらの画像データに基づき、第１基板Ｗ１の基準点と第２基板Ｗ２の基準点とがそれぞれ合致するように、移動機構２０３の水平移動部２３２を用いて第２保持部２０１の水平方向に移動させる。また、制御装置７０は、第１基板Ｗ１の基準点と第２基板Ｗ２の基準点とがそれぞれ合致するように、回転機構１０３を用いて第１保持部１０１を鉛直軸まわりに回転させる。こうして第１保持部１０１と第２保持部２０１の水平方向位置が調節され、第１基板Ｗ１と第２基板Ｗ２の水平方向位置が調節される。 The image data captured by the first imaging unit and the second imaging unit is output to the control device 70. Based on these image data, the control device 70 uses the horizontal moving portion 232 of the moving mechanism 203 so that the reference point of the first substrate W1 and the reference point of the second substrate W2 coincide with each other. Move 201 horizontally. Further, the control device 70 uses the rotation mechanism 103 to rotate the first holding portion 101 around the vertical axis so that the reference point of the first substrate W1 and the reference point of the second substrate W2 coincide with each other. In this way, the horizontal positions of the first holding portion 101 and the second holding portion 201 are adjusted, and the horizontal positions of the first substrate W1 and the second substrate W2 are adjusted.
　つづいて、厚み測定部４０１によって第１基板Ｗ１および第２基板Ｗ２の厚みが測定される（ステップＳ１１１）。 Subsequently, the thickness measuring unit 401 measures the thicknesses of the first substrate W1 and the second substrate W2 (step S111).
　つづいて、第１基板Ｗ１および第２基板Ｗ２を第１距離（たとえば５０μｍ）まで接近させて、第１基板Ｗ１および第２基板Ｗ２をシール部材１４１で取り囲む処理空間を形成する空間形成処理が行われる（ステップＳ１１２）。 Subsequently, a space forming process is performed in which the first substrate W1 and the second substrate W2 are brought close to each other to a first distance (for example, 50 μm) to form a processing space surrounding the first substrate W1 and the second substrate W2 with the sealing member 141. (Step S112).
　空間形成処理では、まず、移動機構２０３の昇降移動部２３１を用いて第２保持部２０１を上昇させる。このとき、制御装置７０は、厚み測定部４０１によって測定された第１基板Ｗ１および第２基板Ｗ２の厚みを考慮して第２保持部２０１の上昇距離を算出する。たとえば、制御装置７０は、複数の距離測定部１５０ａ～１５０ｃによる測定結果を用いて第１吸着領域１１１および第２吸着領域２１１間の距離を算出する。そして、制御装置７０は、算出した第１吸着領域１１１および第２吸着領域２１１間の距離から第１基板Ｗ１の厚みと第２基板Ｗ２の厚みとを差し引いた値が第１距離となるまで第２保持部２０１を上昇させる。 In the space forming process, first, the second holding portion 201 is raised by using the elevating moving portion 231 of the moving mechanism 203. At this time, the control device 70 calculates the climbing distance of the second holding unit 201 in consideration of the thicknesses of the first substrate W1 and the second substrate W2 measured by the thickness measuring unit 401. For example, the control device 70 calculates the distance between the first suction region 111 and the second suction region 211 using the measurement results of the plurality of distance measuring units 150a to 150c. Then, the control device 70 is the first until the value obtained by subtracting the thickness of the first substrate W1 and the thickness of the second substrate W2 from the calculated distance between the first adsorption region 111 and the second adsorption region 211 becomes the first distance. 2 The holding portion 201 is raised.
　このように、接合装置４１は、厚み測定部４０１を備えることで、第１基板Ｗ１および第２基板Ｗ２間の距離を適切に制御することができる。 As described above, the joining device 41 can appropriately control the distance between the first substrate W1 and the second substrate W2 by including the thickness measuring unit 401.
　第２保持部２０１を上昇させることにより、第１保持部１０１の下面に設けられたシール部材１４１が第２保持部２０１の上面に接触する。これにより、第１保持部１０１の下面、第２保持部２０１の上面およびシール部材１４１によって囲まれた処理空間が形成される。第１吸着領域１１１および第２吸着領域２１１は、シール部材１４１によって取り囲まれるように処理空間内に配置される。また、第１吸着領域１１１に吸着保持された第１基板Ｗ１および第２吸着領域２１１に吸着保持された第２基板Ｗ２も処理空間内に配置される。 By raising the second holding portion 201, the seal member 141 provided on the lower surface of the first holding portion 101 comes into contact with the upper surface of the second holding portion 201. As a result, a processing space surrounded by the lower surface of the first holding portion 101, the upper surface of the second holding portion 201, and the seal member 141 is formed. The first suction region 111 and the second suction region 211 are arranged in the processing space so as to be surrounded by the seal member 141. Further, the first substrate W1 adsorbed and held in the first adsorption region 111 and the second substrate W2 adsorbed and held in the second adsorption region 211 are also arranged in the processing space.
　つづいて、制御装置７０は、吸引装置２５４（図４参照）を制御して、処理空間を真空引きすることによって処理空間を減圧する。 Subsequently, the control device 70 controls the suction device 254 (see FIG. 4) to evacuate the processing space to reduce the pressure in the processing space.
　処理空間が減圧されると、処理空間の内部と外部との圧力差によって、第１保持部１０１と第２保持部２０１とは互いに接近しようとする。このため、第１基板Ｗ１および第２基板Ｗ２間の距離が第１距離よりも短くなってしまうおそれがある。 When the processing space is depressurized, the first holding portion 101 and the second holding portion 201 try to approach each other due to the pressure difference between the inside and the outside of the processing space. Therefore, the distance between the first substrate W1 and the second substrate W2 may be shorter than the first distance.
　そこで、制御装置７０は、シール調圧部１４６を制御してシール部材１４１における内部空間１４２の圧力を調節することにより、第１基板Ｗ１および第２基板Ｗ２間の距離を第１距離に維持する。具体的には、制御装置７０は、処理空間の圧力Ｖ６に処理空間の平面積を乗じた値と、内部空間１４２の圧力Ｖ５にシール部材１４１の平面積を乗じた値とが一致するように、内部空間１４２の圧力Ｖ５を調節する。すなわち、処理空間を狭めようとする力と処理空間を広げようとする力とが釣り合うように、内部空間１４２の圧力Ｖ５を調節する。制御装置７０は、圧力測定部１４８による測定結果に基づき、内部空間１４２の圧力Ｖ５をモニタしながらシール調圧部１４６を制御することで、内部空間１４２の圧力Ｖ５を適切に調節することができる。 Therefore, the control device 70 maintains the distance between the first substrate W1 and the second substrate W2 at the first distance by controlling the seal pressure adjusting unit 146 to adjust the pressure of the internal space 142 in the seal member 141. .. Specifically, in the control device 70, the value obtained by multiplying the pressure V6 of the processing space by the flat area of the processing space and the value obtained by multiplying the pressure V5 of the internal space 142 by the flat area of the seal member 141 match. , Adjust the pressure V5 of the internal space 142. That is, the pressure V5 of the internal space 142 is adjusted so that the force for narrowing the processing space and the force for expanding the processing space are balanced. The control device 70 can appropriately adjust the pressure V5 in the internal space 142 by controlling the seal pressure adjusting unit 146 while monitoring the pressure V5 in the internal space 142 based on the measurement result by the pressure measuring unit 148. ..
　なお、「処理空間の平面積」とは、処理空間の内部と外部との圧力差による力を受ける面積のことであり、具体的には、処理空間の内側に位置する第１保持部１０１の下面（あるいは、第２保持部２０１の上面）の面積に相当する。また、「シール部材１４１の平面積」とは、上記圧力差による力に抗する力を伝える面積のことであり、具体的には、シール部材１４１と第１保持部１０１の下面（あるいは、第２保持部２０１の上面）との接触面積に相当する。 The "flat area of the processing space" is an area that receives a force due to a pressure difference between the inside and the outside of the processing space. Specifically, the first holding portion 101 located inside the processing space. It corresponds to the area of the lower surface (or the upper surface of the second holding portion 201). The "flat area of the seal member 141" is an area that transmits a force that opposes the force due to the pressure difference. Specifically, the lower surface (or the first) of the seal member 141 and the first holding portion 101. 2 Corresponds to the contact area with the upper surface of the holding portion 201).
　また、上述したように、内部空間１４２は複数の個別空間１４２ａ～１４２ｃ（図６参照）に分割されており、複数の個別空間１４２ａ～１４２ｃは、複数の個別調圧部１４６ａ～１４６ｃ（図６参照）によって個別に圧力を調節可能である。制御装置７０は、複数の個別空間１４２ａ～１４２ｃに対応する複数の距離測定部１５０ａ～１５０ｃの測定結果を取得する。そして、制御装置７０は、取得した測定結果に基づき、第１保持部１０１と第２保持部２０１との平行度が閾値以上となるように、複数の個別調圧部１４６ａ～１４６ｃを制御して複数の個別空間１４２ａ～１４２ｃの圧力を個別に調節する。 Further, as described above, the internal space 142 is divided into a plurality of individual spaces 142a to 142c (see FIG. 6), and the plurality of individual spaces 142a to 142c are divided into a plurality of individual pressure regulating portions 146a to 146c (FIG. 6). The pressure can be adjusted individually by (see). The control device 70 acquires the measurement results of the plurality of distance measuring units 150a to 150c corresponding to the plurality of individual spaces 142a to 142c. Then, based on the acquired measurement result, the control device 70 controls a plurality of individual pressure adjusting units 146a to 146c so that the parallelism between the first holding unit 101 and the second holding unit 201 becomes equal to or higher than the threshold value. The pressures of the plurality of individual spaces 142a to 142c are individually adjusted.
　たとえば、複数の距離測定部１５０ａ～１５０ｃのうち距離測定部１５０ａの測定結果が第１距離を下回っていたとする。この場合、制御装置７０は、個別調圧部１４６ａを制御して個別空間１４２ａの圧力を高めることにより、距離測定部１５０ａの測定結果を第１距離に近づける。これにより、第１保持部１０１と第２保持部２０１とを平行に保つことができ、後段の接合処理において第１基板Ｗ１と第２基板Ｗ２とを適切に接合することができる。 For example, it is assumed that the measurement result of the distance measuring unit 150a among the plurality of distance measuring units 150a to 150c is less than the first distance. In this case, the control device 70 controls the individual pressure adjusting unit 146a to increase the pressure in the individual space 142a, thereby bringing the measurement result of the distance measuring unit 150a closer to the first distance. As a result, the first holding portion 101 and the second holding portion 201 can be kept in parallel, and the first substrate W1 and the second substrate W2 can be appropriately joined in the subsequent joining process.
　また、制御装置７０は、第１筐体調圧部１２４および第２筐体調圧部２２４を制御して第１蓄圧空間１２１および第２蓄圧空間２２１を減圧する。具体的には、制御装置７０は、第１蓄圧空間１２１および第２蓄圧空間２２１の圧力Ｖ３，Ｖ４が処理空間の圧力Ｖ６と一致するように、第１筐体調圧部１２４および第２筐体調圧部２２４を制御して第１蓄圧空間１２１および第２蓄圧空間２２１の圧力を調節する。 Further, the control device 70 controls the first housing pressure adjusting unit 124 and the second housing pressure adjusting unit 224 to reduce the pressure in the first accumulating space 121 and the second accumulating space 221. Specifically, the control device 70 adjusts the pressure V3 and V4 of the first accumulator space 121 and the second accumulator space 221 so that the pressures V3 and V4 of the first accumulator space 121 and the second accumulator space 221 match the pressure V6 of the processing space. The pressure unit 224 is controlled to adjust the pressure in the first pressure accumulation space 121 and the second pressure accumulation space 221.
　このように、第１蓄圧空間１２１の圧力Ｖ３を処理空間の圧力Ｖ６と一致させることにより、第１保持部１０１の変形を抑制することができる。同様に、第２蓄圧空間２２１の圧力Ｖ４を処理空間の圧力Ｖ６と一致させることにより、第２保持部２０１の変形を抑制することができる。 By matching the pressure V3 of the first accumulator space 121 with the pressure V6 of the processing space in this way, the deformation of the first holding portion 101 can be suppressed. Similarly, by matching the pressure V4 of the second accumulator space 221 with the pressure V6 of the processing space, the deformation of the second holding portion 201 can be suppressed.
　また、制御装置７０は、吸引装置２４４を制御して、処理空間の周囲を排気する。これにより、たとえばシール部材１４１が第２保持部２０１の上面に接触することによって発生するパーティクル等を排気管２４１から接合装置４１の外部へ排出することができる。 Further, the control device 70 controls the suction device 244 to exhaust the air around the processing space. As a result, for example, particles or the like generated when the seal member 141 comes into contact with the upper surface of the second holding portion 201 can be discharged from the exhaust pipe 241 to the outside of the joining device 41.
　また、制御装置７０は、第１吸着領域１１１が第１基板Ｗ１を吸着する圧力Ｖ１および第２吸着領域２１１が第２基板Ｗ２を吸着する圧力Ｖ２が処理空間の圧力Ｖ６よりも低くなるように吸引装置１１４および吸引装置２１４を制御する。これにより、第１基板Ｗ１および第２基板Ｗ２が第１吸着領域１１１および第２吸着領域２１１から外れることを抑制することができる。なお、第１基板Ｗ１の脱落を防止する観点から、第１吸着領域１１１が第１基板Ｗ１を吸着する圧力Ｖ１は、第２吸着領域２１１が第２基板Ｗ２を吸着する圧力Ｖ２よりも低く設定されることが望ましい。すなわち、第１吸着領域１１１による第１基板Ｗ１の吸着力は、第２吸着領域２１１による第２基板Ｗ２の吸着力よりも強く設定されることが望ましい。 Further, in the control device 70, the pressure V1 at which the first suction region 111 sucks the first substrate W1 and the pressure V2 at which the second suction region 211 sucks the second substrate W2 are lower than the pressure V6 in the processing space. It controls the suction device 114 and the suction device 214. As a result, it is possible to prevent the first substrate W1 and the second substrate W2 from coming off from the first adsorption region 111 and the second adsorption region 211. From the viewpoint of preventing the first substrate W1 from falling off, the pressure V1 at which the first adsorption region 111 adsorbs the first substrate W1 is set lower than the pressure V2 at which the second adsorption region 211 adsorbs the second substrate W2. It is desirable to be done. That is, it is desirable that the suction force of the first substrate W1 by the first suction region 111 is set stronger than the suction force of the second substrate W2 by the second suction region 211.
　つづいて、昇降移動部２３１を制御して第２保持部２０１を上昇させることにより、第１基板Ｗ１および第２基板Ｗ２を第１距離よりも短い第２距離（たとえば、５μｍ）まで接近させる（ステップＳ１１３、図９参照）。ステップＳ１１２と同様、制御装置７０は、厚み測定部４０１によって測定された第１基板Ｗ１および第２基板Ｗ２の厚みを考慮して第２保持部２０１の上昇距離を算出する。 Subsequently, by controlling the elevating movement unit 231 to raise the second holding unit 201, the first substrate W1 and the second substrate W2 are brought closer to a second distance (for example, 5 μm) shorter than the first distance (for example, 5 μm). Step S113, see FIG. 9). Similar to step S112, the control device 70 calculates the climbing distance of the second holding unit 201 in consideration of the thicknesses of the first substrate W1 and the second substrate W2 measured by the thickness measuring unit 401.
　また、制御装置７０は、複数の距離測定部１５０ａ～１５０ｃの測定結果に基づき複数の個別調圧部１４６ａ～１４６ｃを制御して複数の個別空間１４２ａ～１４２ｃの圧力を個別に調節しながら、第２保持部２０１を上昇させる。これにより、第１基板Ｗ１と第２基板Ｗ２との平行度を維持しつつ、第１基板Ｗ１と第２基板Ｗ２とを接近させることができる。 Further, the control device 70 controls a plurality of individual pressure adjusting units 146a to 146c based on the measurement results of the plurality of distance measuring units 150a to 150c to individually adjust the pressures of the plurality of individual spaces 142a to 142c. 2 The holding portion 201 is raised. As a result, the first substrate W1 and the second substrate W2 can be brought close to each other while maintaining the parallelism between the first substrate W1 and the second substrate W2.
　つづいて、制御装置７０は、第１筐体調圧部１２４および第２筐体調圧部２２４を制御して、処理空間の圧力よりも高くなるように第１蓄圧空間１２１および第２蓄圧空間２２１の圧力Ｖ３，Ｖ４を調節する（ステップＳ１１４）。 Subsequently, the control device 70 controls the first housing pressure adjusting unit 124 and the second housing pressure adjusting unit 224 to make the pressure in the first accumulating space 121 and the second accumulating space 221 higher than the pressure in the processing space. The pressures V3 and V4 are adjusted (step S114).
　これにより、図１０に示すように、第１吸着領域１１１および第２吸着領域２１１が湾曲して、第１吸着領域１１１に吸着保持された第１基板Ｗ１の中心部と、第２吸着領域２１１に吸着保持された第２基板Ｗ２の中心部とが接触する。 As a result, as shown in FIG. 10, the first adsorption region 111 and the second adsorption region 211 are curved, and the central portion of the first substrate W1 that is adsorbed and held by the first adsorption region 111 and the second adsorption region 211 are formed. It comes into contact with the central portion of the second substrate W2 which is adsorbed and held by.
　第１基板Ｗ１の中心部と第２基板Ｗ２の中心部とが接触することで、第１基板Ｗ１の中心部と第２基板Ｗ２の中心部との間で接合が開始される。具体的には、第１基板Ｗ１の接合面Ｗ１ｊと第２基板Ｗ２の接合面Ｗ２ｊはそれぞれステップＳ１０１，Ｓ１０６において改質されているため、接合面Ｗ１ｊ，Ｗ２ｊ間にファンデルワールス力（分子間力）が生じ、当該接合面Ｗ１ｊ，Ｗ２ｊ同士が接合される。さらに、第１基板Ｗ１の接合面Ｗ１ｊと第２基板Ｗ２の接合面Ｗ２ｊはそれぞれステップＳ１０２，Ｓ１０７において親水化されているため、接合面Ｗ１ｊ，Ｗ２ｊ間の親水基が水素結合し、接合面Ｗ１ｊ，Ｗ２ｊ同士が強固に接合される。 When the central portion of the first substrate W1 and the central portion of the second substrate W2 come into contact with each other, the joining is started between the central portion of the first substrate W1 and the central portion of the second substrate W2. Specifically, since the joint surface W1j of the first substrate W1 and the joint surface W2j of the second substrate W2 are modified in steps S101 and S106, respectively, van der Waals forces (intermolecular) are formed between the joint surfaces W1j and W2j. Force) is generated, and the joint surfaces W1j and W2j are joined to each other. Further, since the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 are hydrophilized in steps S102 and S107, respectively, the hydrophilic groups between the bonding surfaces W1j and W2j are hydrogen-bonded, and the bonding surface W1j , W2j are firmly joined to each other.
　なお、少なくともステップＳ１１４において、制御装置７０は、第１基板Ｗ１および第２基板Ｗ２の湾曲度合いが同一となるように、第１蓄圧空間１２１および第２蓄圧空間２２１の圧力Ｖ３，Ｖ４を同一の値にする。 At least in step S114, the control device 70 has the same pressures V3 and V4 in the first accumulator space 121 and the second accumulator space 221 so that the degree of curvature of the first substrate W1 and the second substrate W2 is the same. Make it a value.
　つづいて、制御装置７０は、吸引装置２５４を制御して、シール部材１４１における内部空間１４２の圧力Ｖ５を低下させる（ステップＳ１１５）。これにより、図１１に示すように、処理空間の内部と外部との圧力差によって第１保持部１０１と第２保持部２０１とが互いに近づくことで、第１基板Ｗ１と第２基板Ｗ２とが全面で当接し、第１基板Ｗ１と第２基板Ｗ２が接合される。なお、ステップＳ１１５において、制御装置７０は、昇降移動部２３１を制御して第２保持部２０１を上昇させることによって第２基板Ｗ２を第１基板Ｗ１に接近させてもよいし、梁部１３１の撓み利用して第１基板Ｗ１を第２基板Ｗ２に接近させてもよい。 Subsequently, the control device 70 controls the suction device 254 to reduce the pressure V5 of the internal space 142 in the seal member 141 (step S115). As a result, as shown in FIG. 11, the first holding portion 101 and the second holding portion 201 come close to each other due to the pressure difference between the inside and the outside of the processing space, so that the first substrate W1 and the second substrate W2 are brought into contact with each other. The first substrate W1 and the second substrate W2 are joined to each other by abutting on the entire surface. In step S115, the control device 70 may bring the second substrate W2 closer to the first substrate W1 by controlling the elevating movement portion 231 to raise the second holding portion 201, or the beam portion 131. The first substrate W1 may be brought closer to the second substrate W2 by utilizing the bending.
　つづいて、制御装置７０は、第１基板Ｗ１および第２基板Ｗ２を加圧する（ステップＳ１１６）。たとえば、制御装置７０は、第１筐体調圧部１２４および第２筐体調圧部２２４の少なくとも一方を制御して第１蓄圧空間１２１および第２蓄圧空間２２１の圧力Ｖ３，Ｖ４の少なくとも一方を処理空間の圧力よりもさらに高くする。これにより、第１保持部１０１と第２保持部２０１とが互いに近づくことで、第１基板Ｗ１および第２基板Ｗ２を加圧することができる。また、制御装置７０は、吸引装置１１４および吸引装置２１４の少なくとも一方を制御して、第１基板Ｗ１を吸着する圧力Ｖ１および第２基板Ｗ２を吸着する圧力Ｖ２の少なくとも一方を処理空間の圧力Ｖ６よりも高くしてもよい。これによっても、第１基板Ｗ１および第２基板Ｗ２を加圧することができる。また、制御装置７０は、昇降移動部２３１を用いて第２保持部２０１を上昇させてもよい。これによっても、第１基板Ｗ１および第２基板Ｗ２を加圧することができる。 Subsequently, the control device 70 pressurizes the first substrate W1 and the second substrate W2 (step S116). For example, the control device 70 controls at least one of the first housing pressure adjusting unit 124 and the second housing pressure adjusting unit 224 to process at least one of the pressures V3 and V4 of the first pressure accumulating space 121 and the second accumulating space 221. Make it even higher than the pressure in space. As a result, the first substrate W1 and the second substrate W2 can be pressurized by bringing the first holding portion 101 and the second holding portion 201 close to each other. Further, the control device 70 controls at least one of the suction device 114 and the suction device 214, and controls at least one of the pressure V1 for adsorbing the first substrate W1 and the pressure V2 for adsorbing the second substrate W2 as the pressure V6 in the processing space. May be higher than. This also makes it possible to pressurize the first substrate W1 and the second substrate W2. Further, the control device 70 may raise the second holding unit 201 by using the elevating / moving unit 231. This also makes it possible to pressurize the first substrate W1 and the second substrate W2.
　このように、第１基板Ｗ１および第２基板Ｗ２を加圧することで、第１基板Ｗ１と第２基板Ｗ２との接合強度を高めることができる。 By pressurizing the first substrate W1 and the second substrate W2 in this way, the bonding strength between the first substrate W1 and the second substrate W2 can be increased.
　ステップＳ１１４～Ｓ１１６の接合処理により形成された重合基板Ｔは、搬送装置６１により第３処理ブロックＧ３のトランジション装置５０，５１に搬送された後、搬入出ステーション２の搬送装置２２によってカセットＣ３に搬送される（ステップＳ１１７）。こうして、一連の処理が終了する。 The polymerization substrate T formed by the joining process of steps S114 to S116 is conveyed to the transition devices 50 and 51 of the third processing block G3 by the transfer device 61, and then transferred to the cassette C3 by the transfer device 22 of the carry-in / out station 2. (Step S117). In this way, a series of processes is completed.
＜シール部材１４１の変形例＞
　図１２は、変形例に係るシール部材の構成を示す模式図である。図１２に示すように、変形例に係るシール部材１４１Ａは、下方に向けて開放された内部空間１４２Ａを有する。この内部空間１４２Ａは、シール部材１４１Ａが第２保持部２０１の上面に接触することで密閉される。このように、シール部材１４１Ａは、少なくとも処理空間が形成されている状態において閉じられる内部空間１４２Ａを有していればよい。 <Modification example of seal member 141>
FIG. 12 is a schematic view showing the configuration of the seal member according to the modified example. As shown in FIG. 12, the seal member 141A according to the modified example has an internal space 142A that is open downward. The internal space 142A is sealed when the sealing member 141A comes into contact with the upper surface of the second holding portion 201. As described above, the seal member 141A may have an internal space 142A that is closed at least in a state where the processing space is formed.
　また、上述した実施形態では、角形の断面形状を有するシール部材１４１を例に挙げて説明したが、シール部材１４１の断面形状は、必ずしも角形であることを要せず、たとえば円形であってもよい。 Further, in the above-described embodiment, the seal member 141 having a square cross-sectional shape has been described as an example, but the cross-sectional shape of the seal member 141 does not necessarily have to be square, and even if it is circular, for example. Good.
＜その他の実施形態＞
　上述した実施形態では、シール部材１４１，１４１Ａが第１保持部１０１に設けられる場合の例について説明したが、シール部材１４１，１４１Ａは、第２保持部２０１に設けられてもよい。なお、シール部材１４１Ａが第２保持部２０１に設けられる場合、シール部材１４１Ａの内部空間１４２Ａは、第１保持部１０１の上面に向かって開放されていればよい。 <Other Embodiments>
In the above-described embodiment, an example in which the seal members 141 and 141A are provided on the first holding portion 101 has been described, but the seal members 141 and 141A may be provided on the second holding portion 201. When the seal member 141A is provided in the second holding portion 201, the internal space 142A of the seal member 141A may be opened toward the upper surface of the first holding portion 101.
　上述した実施形態では、減圧された処理空間において第１基板Ｗ１と第２基板Ｗ２とを接合する場合の例について説明したが、処理空間は必ずしも減圧されることを要しない。たとえば、接合処理は、常圧の処理空間において行われてもよい。この場合、制御装置７０は、ステップＳ１１４において、第１筐体調圧部１２４および第２筐体調圧部２２４を制御して、第１蓄圧空間１２１および第２蓄圧空間２２１が常圧よりも高くなるように第１蓄圧空間１２１および第２蓄圧空間２２１を加圧すればよい。 In the above-described embodiment, an example of joining the first substrate W1 and the second substrate W2 in the decompressed processing space has been described, but the processing space does not necessarily have to be decompressed. For example, the joining process may be performed in a normal pressure processing space. In this case, in step S114, the control device 70 controls the first housing pressure adjusting unit 124 and the second housing pressure adjusting unit 224, so that the first accumulating space 121 and the second accumulating space 221 become higher than the normal pressure. As described above, the first accumulator space 121 and the second accumulator space 221 may be pressurized.
　また、上述した実施形態では、ステップＳ１１４において、第１吸着領域１１１および第２吸着領域２１１の両方を湾曲させる場合の例について説明したが、第１吸着領域１１１および第２吸着領域２１１の一方のみを湾曲させてもよい。 Further, in the above-described embodiment, an example in which both the first adsorption region 111 and the second adsorption region 211 are curved has been described in step S114, but only one of the first adsorption region 111 and the second adsorption region 211 has been described. May be curved.
　また、接合装置４１は、回転機構１０３に押圧機構を設けてもよい。これにより、たとえば、ステップＳ１１６において、回転機構１０３に設けられた押圧機構を用いて第１基板Ｗ１および第２基板Ｗ２を加圧することができる。 Further, the joining device 41 may be provided with a pressing mechanism in the rotating mechanism 103. Thereby, for example, in step S116, the first substrate W1 and the second substrate W2 can be pressurized by using the pressing mechanism provided in the rotation mechanism 103.
　図１３は、他の実施形態に係る接合装置が備える第１保持部の構成を示す図である。また、図１４は、他の実施形態に係る第１保持部が湾曲する様子を示す模式図である。なお、ここでは第１保持部の構成を例示すが、第２保持部も同様の構成としてもよい。 FIG. 13 is a diagram showing a configuration of a first holding portion included in the joining device according to another embodiment. Further, FIG. 14 is a schematic view showing how the first holding portion according to another embodiment is curved. Although the configuration of the first holding portion is shown here as an example, the second holding portion may also have the same configuration.
　図１３に示すように、他の実施形態に係る接合装置４１Ｂは、第１保持部１０１Ｂを備える。 As shown in FIG. 13, the joining device 41B according to another embodiment includes a first holding portion 101B.
　第１保持部１０１Ｂの上面には、曲面状の凸部１１７が形成される。凸部１１７は、その頂点が第１吸着領域１１１の中心部（言い換えれば、第１基板Ｗ１の中心部）と一致するように形成される。言い換えれば、第１保持部１０１Ｂは、その中心部の厚みが外周部の厚みより大きくなっている。第１保持部１０１Ｂは、第１筐体１０２Ｂの下面外周部に設けられた固定リング１２５によって外周部が第１筐体１０２Ｂに固定される。また、第１保持部１０１Ｂと第１筐体１０２Ｂとの間には、第１蓄圧空間１２１Ｂが形成される。 A curved convex portion 117 is formed on the upper surface of the first holding portion 101B. The convex portion 117 is formed so that its apex coincides with the central portion of the first suction region 111 (in other words, the central portion of the first substrate W1). In other words, the thickness of the central portion of the first holding portion 101B is larger than the thickness of the outer peripheral portion. The outer peripheral portion of the first holding portion 101B is fixed to the first housing 102B by a fixing ring 125 provided on the lower outer peripheral portion of the first housing 102B. Further, a first accumulator space 121B is formed between the first holding portion 101B and the first housing 102B.
　図１４に示すように、第１筐体調圧部１２４によって、処理空間の圧力よりも高くなるように第１蓄圧空間１２１Ｂの圧力が調節されると、第１保持部１０１Ｂは上方から押圧される。このとき、第１保持部１０１Ｂの外周部が固定リング１２５によって第１筐体１０２Ｂに固定されているため、第１保持部１０１Ｂは、第１蓄圧空間１２１Ｂと処理空間との圧力差により、下方に向かって凸状に突出する。 As shown in FIG. 14, when the pressure of the first accumulator space 121B is adjusted by the first housing pressure adjusting unit 124 so as to be higher than the pressure of the processing space, the first holding unit 101B is pressed from above. .. At this time, since the outer peripheral portion of the first holding portion 101B is fixed to the first housing 102B by the fixing ring 125, the first holding portion 101B is lowered due to the pressure difference between the first accumulating space 121B and the processing space. It protrudes convexly toward.
　このように、第１保持部１０１Ｂは、曲面状の凸部１１７を上面に有していてもよい。これにより、第１保持部１０１Ｂの下面を適切に変形させることができ、第１基板Ｗ１および第２基板Ｗ２の中心部同士を適切に接触させることができる。 As described above, the first holding portion 101B may have a curved convex portion 117 on the upper surface. As a result, the lower surface of the first holding portion 101B can be appropriately deformed, and the central portions of the first substrate W1 and the second substrate W2 can be appropriately brought into contact with each other.
　上述してきたように、実施形態に係る接合装置（一例として、接合装置４１）は、第１保持部（一例として、第１保持部１０１）と、第２保持部（一例として、第２保持部２０１）と、移動機構（一例として、移動機構２０３）と、シール部材（一例として、シール部材１４１，１４１Ａ）と、制御部（一例として、制御装置７０の制御部）とを備える。第１保持部は、第１基板（一例として、第１基板Ｗ１）を吸着保持する第１吸着領域（一例として、第１吸着領域１１１）を有する。第２保持部は、第１保持部の下方に配置され、第２基板（一例として、第２基板Ｗ２）を吸着保持する第２吸着領域（一例として、第２吸着領域２１１）を有する。移動機構は、第２保持部を少なくとも昇降移動させる。シール部材は、第１保持部および第２保持部の一方に設けられ、第１吸着領域および第２吸着領域の一方を取り囲む。制御部は、第２保持部を第１保持部に近接させて第１吸着領域および第２吸着領域の両方をシール部材で取り囲むことによって外部から隔離された処理空間を形成する空間形成処理と、処理空間において第１基板と第２基板とを接合する接合処理とを実行する。 As described above, the joining device (for example, the joining device 41) according to the embodiment includes a first holding portion (for example, a first holding portion 101) and a second holding portion (for example, a second holding portion). 201), a moving mechanism (moving mechanism 203 as an example), a sealing member (seal members 141 and 141A as an example), and a control unit (control unit of the control device 70 as an example) are provided. The first holding portion has a first suction region (for example, a first suction region 111) that sucks and holds the first substrate (for example, the first substrate W1). The second holding portion is arranged below the first holding portion and has a second suction region (for example, a second suction region 211) that sucks and holds the second substrate (for example, the second substrate W2). The moving mechanism moves the second holding portion at least up and down. The seal member is provided on one of the first holding portion and the second holding portion, and surrounds one of the first suction region and the second suction region. The control unit has a space forming process for forming a processing space isolated from the outside by bringing the second holding unit close to the first holding unit and surrounding both the first suction region and the second suction region with a sealing member. A joining process for joining the first substrate and the second substrate is performed in the processing space.
　外部から隔離された処理空間を形成することで、たとえば、処理空間を減圧した状態、言い換えれば、処理空間から気体分子を排除した状態で接合処理を行うことができる。第１基板と第２基板との接合領域がたとえば第１基板および第２基板の中心部から外周部に向かって拡大する所謂ボンディングウェーブは、気体分子の存在によってその進行が阻害されることがわかっている。この気体分子によるボンディングウェーブの阻害は、第１基板および第２基板間のギャップが狭くなるほど顕著となる。これは、第１基板および第２基板間のギャップが狭くなるほど、第１基板および第２基板間から気体分子が抜けにくくなるためである。 By forming a processing space isolated from the outside, for example, the joining process can be performed in a state where the processing space is depressurized, in other words, a state in which gas molecules are excluded from the processing space. It was found that the progress of the so-called bonding wave in which the bonding region between the first substrate and the second substrate expands from the central portion of the first substrate and the second substrate toward the outer peripheral portion is hindered by the presence of gas molecules. ing. The inhibition of the bonding wave by the gas molecules becomes more remarkable as the gap between the first substrate and the second substrate becomes narrower. This is because the narrower the gap between the first substrate and the second substrate, the more difficult it is for gas molecules to escape from between the first substrate and the second substrate.
　これに対し、処理空間から気体分子を排除し、ボンディングウェーブが阻害されにくくすることで、第１基板および第２基板間のギャップをより狭くした状態で接合処理を行うことができる。第１基板と第２基板との接合を開始させる際には、第１基板と第２基板とを接触させるために第１基板および第２基板の少なくとも一方を他方に向かって変形させる。このとき、第１基板および第２基板間のギャップが狭いほど、第１基板または第２基板の変形量は少なくて済むため、接合後の基板である重合基板の歪みを少なく抑えることができる。 On the other hand, by eliminating gas molecules from the processing space and making it difficult for the bonding wave to be obstructed, the bonding process can be performed with the gap between the first substrate and the second substrate narrower. When starting the bonding between the first substrate and the second substrate, at least one of the first substrate and the second substrate is deformed toward the other in order to bring the first substrate and the second substrate into contact with each other. At this time, the narrower the gap between the first substrate and the second substrate, the smaller the amount of deformation of the first substrate or the second substrate is, so that the distortion of the polymerized substrate which is the substrate after bonding can be suppressed to be small.
　また、処理空間から気体分子を排除することで、重合基板の内部にボイドが発生することを抑制することができる。 Further, by eliminating gas molecules from the processing space, it is possible to suppress the generation of voids inside the polymerization substrate.
　シール部材は、可撓性材料により形成され、且つ、少なくとも処理空間が形成されている状態において閉じられる内部空間（一例として、内部空間１４２，１４２Ａ）を有していてもよい。 The sealing member may have an internal space (for example, internal spaces 142, 142A) formed of a flexible material and closed at least in a state where a processing space is formed.
　また、実施形態に係る接合装置は、内部空間の圧力を調節するシール調圧部（一例として、シール調圧部１４６）をさらに備えていてもよい。 Further, the joining device according to the embodiment may further include a seal pressure adjusting unit (for example, a seal pressure adjusting unit 146) for adjusting the pressure in the internal space.
　かかる構成とすることにより、たとえば、内部空間の圧力を調節することができる。これにより、たとえば、処理空間を減圧した場合に、処理空間の内部と外部との圧力差によって第１保持部と第２保持部とが互いに近付くことを内部空間の圧力によって抑制することができる。したがって、たとえば、第１基板および第２基板間のギャップを所望の値に保つことができる。 With such a configuration, for example, the pressure in the internal space can be adjusted. Thereby, for example, when the processing space is depressurized, the pressure difference between the inside and the outside of the processing space can prevent the first holding portion and the second holding portion from approaching each other due to the pressure in the internal space. Therefore, for example, the gap between the first substrate and the second substrate can be maintained at a desired value.
　内部空間は、周方向に並ぶ複数の個別空間（一例として、個別空間１４２ａ～１４２ｃ）に分割されていてもよい。この場合、シール調圧部（一例として、個別調圧部１４６ａ～１４６ｃ）は、複数の個別空間の圧力を個別に調節可能であってもよい。 The internal space may be divided into a plurality of individual spaces (as an example, individual spaces 142a to 142c) arranged in the circumferential direction. In this case, the seal pressure adjusting unit (for example, the individual pressure adjusting units 146a to 146c) may be able to individually adjust the pressure in the plurality of individual spaces.
　複数の個別空間の圧力を個別に調節可能とすることで、たとえば、第１保持部および第２保持部の一方が他方に対して傾いている場合に、複数の個別空間のうち一部の個別空間の圧力を高めにあるいは低めに調節することで、上記傾きをなくすことができる。第１保持部と第２保持部とを平行にすることで、接合処理において第１基板と第２基板とを適切に接合することができるようになるため、歪みの少ない重合基板を形成することができる。 By making the pressure of the plurality of individual spaces individually adjustable, for example, when one of the first holding portion and the second holding portion is tilted with respect to the other, some of the individual spaces are individually adjusted. The above inclination can be eliminated by adjusting the pressure in the space to be higher or lower. By making the first holding portion and the second holding portion parallel to each other, the first substrate and the second substrate can be appropriately bonded in the bonding process, so that a polymerized substrate with less distortion can be formed. Can be done.
　実施形態に係る接合装置は、第１保持部を鉛直軸まわりに回転させる回転機構（一例として、回転機構１０３）をさらに備えていてもよい。第１保持部を回転可能とすることで、たとえば、空間形成処理前において、第１保持部を回転させることにより、第１基板と第２基板の水平方向の向きを調節することができる。 The joining device according to the embodiment may further include a rotation mechanism (as an example, a rotation mechanism 103) that rotates the first holding portion around a vertical axis. By making the first holding portion rotatable, for example, the horizontal orientation of the first substrate and the second substrate can be adjusted by rotating the first holding portion before the space forming process.
　移動機構（一例として、水平移動部２３２）は、第２保持部を水平移動させてもよい。第２保持部を水平移動可能とすることで、たとえば、空間形成処理前において、第２保持部を水平移動させることにより、第１基板と第２基板との水平方向の位置を調節することができる。 The moving mechanism (as an example, the horizontal moving portion 232) may move the second holding portion horizontally. By making the second holding portion horizontally movable, for example, it is possible to adjust the horizontal positions of the first substrate and the second substrate by horizontally moving the second holding portion before the space formation process. it can.
　実施形態に係る接合装置は、第１保持部に保持された第１基板および第２保持部に保持された第２基板の厚みを測定する厚み測定部（一例として、厚み測定部４０１）をさらに備えていてもよい。 The joining device according to the embodiment further includes a thickness measuring unit (as an example, a thickness measuring unit 401) for measuring the thickness of the first substrate held by the first holding portion and the second substrate held by the second holding portion. You may have it.
　厚み測定部を用いて第１基板および第２基板の厚みを測定することで、厚みの異なる種々の第１基板および第２基板が第１保持部および第２保持部に保持されたとしても、第１基板および第２基板間のギャップを適切な値に調節することができる。 By measuring the thickness of the first substrate and the second substrate using the thickness measuring portion, even if various first substrates and second substrates having different thicknesses are held by the first holding portion and the second holding portion. The gap between the first substrate and the second substrate can be adjusted to an appropriate value.
　実施形態に係る接合装置は、第１保持部または第２保持部に接続され、第１保持部の上面または第２保持部の下面との間に蓄圧空間（一例として、第１蓄圧空間１２１、第２蓄圧空間２２１）を有する筐体（一例として、第１筐体１０２、第２筐体２０２）と、蓄圧空間の圧力を調節する筐体調圧部（一例として、第１筐体調圧部１２４、第２筐体調圧部２２４）とをさらに備えていてもよい。 The joining device according to the embodiment is connected to the first holding portion or the second holding portion, and is connected to the upper surface of the first holding portion or the lower surface of the second holding portion in a pressure accumulating space (for example, the first accumulating space 121, A housing having a second pressure accumulating space 221) (for example, the first housing 102 and a second housing 202) and a housing pressure adjusting unit for adjusting the pressure in the accumulating space (for example, a first housing pressure adjusting unit 124). , The second housing pressure adjusting unit 224) may be further provided.
　また、制御部は、接合処理において、筐体調圧部を制御して、処理空間の圧力よりも高くなるように蓄圧空間の圧力を調節することにより、第１吸着領域または第２吸着領域を湾曲させて第１基板と第２基板とを接触させてもよい。 Further, in the joining process, the control unit curves the first suction region or the second suction region by controlling the housing pressure adjusting unit and adjusting the pressure in the pressure accumulating space so as to be higher than the pressure in the processing space. The first substrate and the second substrate may be brought into contact with each other.
　このように、第１吸着領域または第２吸着領域を湾曲させることで、第１基板または第２基板を全体的に湾曲させることができる。このため、たとえば、第１基板の中心部を棒状の部材で押し下げて第２基板の中心部に接触させる場合と比較して、第１基板または第２基板の局所的な変形を抑制することができる。したがって、歪みの少ない重合基板を形成することができる。 By curving the first suction region or the second suction region in this way, the first substrate or the second substrate can be curved as a whole. Therefore, for example, it is possible to suppress local deformation of the first substrate or the second substrate as compared with the case where the central portion of the first substrate is pushed down by a rod-shaped member and brought into contact with the central portion of the second substrate. it can. Therefore, it is possible to form a polymerization substrate with less distortion.
　筐体が接続される第１保持部の上面または第２保持部の下面は、曲面状の凹部（一例として、凹部１１６，２１６）または凸部（一例として、凸部１１７）を有していてもよい。 The upper surface of the first holding portion or the lower surface of the second holding portion to which the housing is connected has a curved concave portion ( concave portions 116, 216 as an example) or a convex portion (convex portion 117 as an example). May be good.
　凹部または凸部を形成することで、蓄圧空間を加圧した際に第１保持部の下面または第２保持部の上面を適切に変形させることができることから、第１基板と第２基板とを適切に接触させることができる。 By forming the concave portion or the convex portion, the lower surface of the first holding portion or the upper surface of the second holding portion can be appropriately deformed when the pressure accumulating space is pressurized. Therefore, the first substrate and the second substrate can be separated from each other. Can be properly contacted.
　シール部材は、可撓性材料により形成され、且つ、少なくとも処理空間が形成されている状態において閉じられる内部空間（一例として、内部空間１４２，１４２Ａ）を有していてもよい。また、実施形態に係る接合装置は、内部空間の圧力を調節するシール調圧部（一例として、シール調圧部１４６）をさらに備えていてもよい。この場合、制御部は、接合処理において、内部空間が加圧された状態で第１保持部または第２保持部を湾曲させて第１基板の中心部と第２基板の中心部とを接触させた後、シール調圧部を制御して内部空間の圧力を低下させることによって第１基板と第２基板とを全面で接合させてもよい。 The sealing member may have an internal space (for example, internal spaces 142, 142A) formed of a flexible material and closed at least in a state where a processing space is formed. Further, the joining device according to the embodiment may further include a seal pressure adjusting unit (for example, a seal pressure adjusting unit 146) for adjusting the pressure in the internal space. In this case, in the joining process, the control unit bends the first holding portion or the second holding portion in a state where the internal space is pressurized so that the central portion of the first substrate and the central portion of the second substrate are brought into contact with each other. After that, the first substrate and the second substrate may be joined over the entire surface by controlling the seal pressure adjusting portion to reduce the pressure in the internal space.
　内部空間の圧力を低下させることにより、処理空間の内部と外部との圧力差によって第１保持部と第２保持部とが互いに近づくことで、第１基板と第２基板とが全面で当接する。これにより、第１基板と第２基板とを全面で接合させることができる。 By reducing the pressure in the internal space, the first holding portion and the second holding portion come close to each other due to the pressure difference between the inside and the outside of the processing space, so that the first substrate and the second substrate come into contact with each other on the entire surface. .. As a result, the first substrate and the second substrate can be joined on the entire surface.
　制御部は、接合処理において、第１基板と第２基板とを全面で接合させた後、第１基板および第２基板を加圧してもよい。第１基板および第２基板を加圧することで、第１基板と第２基板との接合強度を高めることができる。 The control unit may pressurize the first substrate and the second substrate after joining the first substrate and the second substrate on the entire surface in the joining process. By pressurizing the first substrate and the second substrate, the bonding strength between the first substrate and the second substrate can be increased.
　実施形態に係る接合装置は、処理空間を減圧する減圧機構（一例として、減圧機構２０５）をさらに備えていてもよい。この場合、制御部は、空間形成処理において、減圧機構を制御して処理空間を減圧するとともに、筐体調圧部を制御して蓄圧空間を減圧してもよい。 The joining device according to the embodiment may further include a decompression mechanism (for example, a decompression mechanism 205) that depressurizes the processing space. In this case, the control unit may control the pressure reducing mechanism to reduce the pressure in the processing space and control the pressure adjusting unit in the housing to reduce the pressure in the accumulating space in the space forming process.
　たとえば、蓄圧空間の圧力が処理空間の圧力と一致するように、筐体調圧部を制御して蓄圧空間の圧力を調節する。これにより、処理空間の内部と外部との圧力差による第１保持部または第２保持部の変形を抑制することができる。 For example, the pressure in the accumulator space is adjusted by controlling the housing pressure adjusting unit so that the pressure in the accumulator space matches the pressure in the processing space. As a result, deformation of the first holding portion or the second holding portion due to the pressure difference between the inside and the outside of the processing space can be suppressed.
　制御部は、空間形成処理において、第１吸着領域によって第１基板を吸着する圧力および第２吸着領域によって第２基板を吸着する圧力を処理空間の圧力よりも低くしてもよい。れにより、第１基板および第２基板が第１吸着領域および第２吸着領域から外れることを抑制することができる。 In the space forming process, the control unit may lower the pressure for adsorbing the first substrate by the first adsorption region and the pressure for adsorbing the second substrate by the second adsorption region to be lower than the pressure in the processing space. As a result, it is possible to prevent the first substrate and the second substrate from coming off from the first adsorption region and the second adsorption region.
　今回開示された実施形態は全ての点で例示であって制限的なものではないと考えられるべきである。実に、上記した実施形態は多様な形態で具現され得る。また、上記の実施形態は、添付の請求の範囲およびその趣旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 The embodiments disclosed this time should be considered to be exemplary in all respects and not restrictive. Indeed, the above embodiments can be embodied in a variety of forms. In addition, the above-described embodiment may be omitted, replaced, or changed in various forms without departing from the scope of the appended claims and the purpose thereof.
Ｗ１　　第１基板
Ｗ２　　第２基板
Ｔ　　　重合基板
１　　　接合システム
４１　　接合装置
７０　　制御装置
１０１　第１保持部
１１１　第１吸着領域
１４１　シール部材
２０１　第２保持部
２１１　第２吸着領域
２０３　移動機構 W1 1st substrate W2 2nd substrate T Polymerized substrate 1 Joining system 41 Joining device 70 Control device 101 1st holding part 111 1st suction area 141 Sealing member 201 2nd holding part 211 2nd suction area 203 Moving mechanism

Claims (17)

  1. 　第１基板を吸着保持する第１吸着領域を有する第１保持部と、
    　前記第１保持部の下方に配置され、第２基板を吸着保持する第２吸着領域を有する第２保持部と、
    　前記第２保持部を少なくとも昇降移動させる移動機構と、
    　前記第１保持部および前記第２保持部の一方に設けられ、前記第１吸着領域および前記第２吸着領域の一方を取り囲むシール部材と、
    　前記第２保持部を前記第１保持部に近接させて前記第１吸着領域および前記第２吸着領域の両方を前記シール部材で取り囲むことによって外部から隔離された処理空間を形成する空間形成処理と、前記処理空間において前記第１基板と前記第２基板とを接合する接合処理とを実行する制御部と
    　を備える、接合装置。     A first holding portion having a first suction region that sucks and holds the first substrate,
    A second holding portion arranged below the first holding portion and having a second suction region for sucking and holding the second substrate, and a second holding portion.
    A moving mechanism that moves the second holding portion up and down at least
    A seal member provided on one of the first holding portion and the second holding portion and surrounding one of the first suction region and the second suction region.
    A space forming process for forming a processing space isolated from the outside by bringing the second holding portion close to the first holding portion and surrounding both the first suction region and the second suction region with the seal member. A joining device including a control unit that executes a joining process for joining the first substrate and the second substrate in the processing space.
  2. 　前記シール部材は、
    　可撓性材料により形成され、且つ、少なくとも前記処理空間が形成されている状態において閉じられる内部空間を有する、請求項１に記載の接合装置。     The seal member is
    The joining apparatus according to claim 1, wherein the joining apparatus is formed of a flexible material and has an internal space that is closed when at least the processing space is formed.
  3. 　前記内部空間の圧力を調節するシール調圧部
    　をさらに備える、請求項２に記載の接合装置。     The joining device according to claim 2, further comprising a seal pressure adjusting portion for adjusting the pressure in the internal space.
  4. 　前記内部空間は、周方向に並ぶ複数の個別空間に分割されており、
    　前記シール調圧部は、
    　前記複数の個別空間の圧力を個別に調節可能である、請求項３に記載の接合装置。     The internal space is divided into a plurality of individual spaces arranged in the circumferential direction.
    The seal pressure adjusting part is
    The joining device according to claim 3, wherein the pressures in the plurality of individual spaces can be individually adjusted.
  5. 　前記第１保持部を鉛直軸まわりに回転させる回転機構
    　をさらに備える、請求項１～４のいずれか一つに記載の接合装置。     The joining device according to any one of claims 1 to 4, further comprising a rotating mechanism for rotating the first holding portion around a vertical axis.
  6. 　前記移動機構は、
    　前記第２保持部を水平移動させる、請求項１～５のいずれか一つに記載の接合装置。     The moving mechanism
    The joining device according to any one of claims 1 to 5, which horizontally moves the second holding portion.
  7. 　前記第１保持部に保持された前記第１基板および前記第２保持部に保持された前記第２基板の厚みを測定する厚み測定部
    　をさらに備える、請求項１～６のいずれか一つに記載の接合装置。     One of claims 1 to 6, further comprising a thickness measuring unit for measuring the thickness of the first substrate held by the first holding unit and the second substrate held by the second holding unit. The joining device described.
  8. 　前記第１保持部または前記第２保持部に接続され、前記第１保持部の上面または前記第２保持部の下面との間に蓄圧空間を有する筐体と、
    　前記蓄圧空間の圧力を調節する筐体調圧部と
    　をさらに備える、請求項１に記載の接合装置。     A housing connected to the first holding portion or the second holding portion and having an accumulating space between the upper surface of the first holding portion or the lower surface of the second holding portion.
    The joining device according to claim 1, further comprising a housing pressure adjusting portion for adjusting the pressure in the pressure accumulating space.
  9. 　前記制御部は、
    　前記接合処理において、前記筐体調圧部を制御して、前記処理空間の圧力よりも高くなるように前記蓄圧空間の圧力を調節することにより、前記第１吸着領域または前記第２吸着領域を湾曲させて前記第１基板と前記第２基板とを接触させる、請求項８に記載の接合装置。     The control unit
    In the joining process, the pressure adjusting portion of the housing is controlled to adjust the pressure in the pressure accumulating space so as to be higher than the pressure in the processing space, thereby bending the first suction region or the second suction region. The joining device according to claim 8, wherein the first substrate and the second substrate are brought into contact with each other.
  10. 　前記筐体が接続される前記第１保持部の上面または前記第２保持部の下面は、曲面状の凹部を有する、請求項８または９に記載の接合装置。 The joining device according to claim 8 or 9, wherein the upper surface of the first holding portion or the lower surface of the second holding portion to which the housing is connected has a curved concave portion.
  11. 　前記筐体が接続される前記第１保持部の上面または前記第２保持部の下面は、曲面状の凸部を有する、請求項８または９に記載の接合装置。 The joining device according to claim 8 or 9, wherein the upper surface of the first holding portion or the lower surface of the second holding portion to which the housing is connected has a curved convex portion.
  12. 　前記シール部材は、可撓性材料により形成され、且つ、少なくとも前記処理空間が形成されている状態において閉じられる内部空間を有しており、
    　前記内部空間の圧力を調節するシール調圧部
    　をさらに備え、
    　前記制御部は、
    　前記接合処理において、前記内部空間が加圧された状態で前記第１吸着領域または前記第２吸着領域を湾曲させて前記第１基板の中心部と前記第２基板の中心部とを接触させた後、前記シール調圧部を制御して前記内部空間の圧力を低下させることによって前記第１基板と前記第２基板とを全面で接合させる、請求項９～１１のいずれか一つに記載の接合装置。     The sealing member is formed of a flexible material and has an internal space that is closed at least in a state where the processing space is formed.
    Further provided with a seal pressure regulator for adjusting the pressure in the internal space,
    The control unit
    In the joining process, the first adsorption region or the second adsorption region is curved in a state where the internal space is pressurized so that the central portion of the first substrate and the central portion of the second substrate are brought into contact with each other. After that, according to any one of claims 9 to 11, the first substrate and the second substrate are joined on the entire surface by controlling the seal pressure adjusting portion to reduce the pressure in the internal space. Joining device.
  13. 　前記制御部は、
    　前記接合処理において、前記第１基板と前記第２基板とを全面で接合させた後、前記第１基板および前記第２基板を加圧する、請求項１２に記載の接合装置。     The control unit
    The joining device according to claim 12, wherein in the joining process, the first substrate and the second substrate are joined on the entire surface, and then the first substrate and the second substrate are pressurized.
  14. 　前記処理空間を減圧する減圧機構
    　をさらに備え、
    　前記制御部は、
    　前記空間形成処理において、前記減圧機構を制御して前記処理空間を減圧するとともに、前記筐体調圧部を制御して前記蓄圧空間を減圧する、請求項８～１３のいずれか一つに記載の接合装置。     A decompression mechanism for depressurizing the processing space is further provided.
    The control unit
    8. Joining device.
  15. 　前記制御部は、
    　前記空間形成処理において、前記第１吸着領域によって前記第１基板を吸着する圧力および前記第２吸着領域によって前記第２基板を吸着する圧力を前記処理空間の圧力よりも低くする、請求項１４に記載の接合装置。     The control unit
    14. According to claim 14, in the space forming process, the pressure for adsorbing the first substrate by the first adsorption region and the pressure for adsorbing the second substrate by the second adsorption region are made lower than the pressure in the processing space. The joining device described.
  16. 　第１吸着領域に第１基板を吸着保持した第１保持部と、第２吸着領域に第２基板を吸着保持した第２保持部とを接近させて、前記第１保持部および前記第２保持部の一方に設けられ、前記第１吸着領域および前記第２吸着領域の一方を取り囲むシール部材で前記第１吸着領域および前記第２吸着領域の両方を取り囲むことにより、外部から隔離された処理空間を形成する空間形成工程と、
    　前記空間形成工程後、前記シール部材の内部空間を加圧しつつ、前記処理空間を減圧する減圧工程と、
    　前記減圧工程後、前記第１基板と前記第２基板とを接合する接合工程と
    　を含む、接合方法。     The first holding portion that sucks and holds the first substrate in the first suction region and the second holding portion that sucks and holds the second substrate in the second suction region are brought close to each other so that the first holding portion and the second holding portion are held. A processing space isolated from the outside by surrounding both the first adsorption region and the second adsorption region with a seal member provided on one of the portions and surrounding one of the first adsorption region and the second adsorption region. Space formation process to form
    After the space forming step, a decompression step of depressurizing the processing space while pressurizing the internal space of the seal member,
    A joining method including a joining step of joining the first substrate and the second substrate after the decompression step.
  17. 　前記接合工程は、
    　前記第１保持部または前記第２保持部に接続され、前記第１保持部の上面または前記第２保持部の下面との間に蓄圧空間を有する筐体の前記蓄圧空間を前記処理空間の圧力よりも高くすることにより、前記第１吸着領域または前記第２吸着領域を湾曲させて前記第１基板と前記第２基板とを接触させる、請求項１６に記載の接合方法。     The joining step is
    The pressure of the processing space is the pressure of the housing which is connected to the first holding portion or the second holding portion and has an accumulating space between the upper surface of the first holding portion or the lower surface of the second holding portion. The joining method according to claim 16, wherein the first suction region or the second suction region is curved to bring the first substrate into contact with the second substrate.
PCT/JP2020/011398 2019-03-22 2020-03-16 Bonding device and bonding method WO2020196011A1 (en)

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JP2009010072A (en) * 2007-06-27 2009-01-15 Shinko Electric Ind Co Ltd Substrate-sticking device
JP5282100B2 (en) * 2008-11-14 2013-09-04 東京エレクトロン株式会社 Bonding apparatus and bonding method
JP2017005219A (en) * 2015-06-16 2017-01-05 東京エレクトロン株式会社 Joint device, joint system, joint method, program and computer storage medium
JP2018026413A (en) * 2016-08-09 2018-02-15 東京エレクトロン株式会社 Bonding device and bonding system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009010072A (en) * 2007-06-27 2009-01-15 Shinko Electric Ind Co Ltd Substrate-sticking device
JP5282100B2 (en) * 2008-11-14 2013-09-04 東京エレクトロン株式会社 Bonding apparatus and bonding method
JP2017005219A (en) * 2015-06-16 2017-01-05 東京エレクトロン株式会社 Joint device, joint system, joint method, program and computer storage medium
JP2018026413A (en) * 2016-08-09 2018-02-15 東京エレクトロン株式会社 Bonding device and bonding system

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