JP2015018919A - Joining device, joining system, joining method, program and computer storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To properly adjust horizontal positions of a first holding part for holding a first substrate and a second holding part for holding a second substrate, and properly perform joint processing of substrates.SOLUTION: A joining device 41 comprises: a processing container 100 for housing an upper wafer Wand a lower wafer W; an upper chuck 140 fixed and provided on the processing container 100 and holding the upper wafer Won its lower surface; a lower chuck 141 provided below the upper chuck 140 and holding the lower wafer Won its upper surface; a first lower chuck moving part 160 and a second lower chuck moving part 166 for moving the lower chuck 141 to the horizontal direction and the vertical direction; an upper imaging part 151 provided on the upper chuck 140 and imaging a surface of the lower wafer Wheld on the lower chuck 141; and a lower imaging part 161 provided on the lower chuck 141 and imaging a surface of the upper wafer Wheld on the upper chuck 140.

Description

  The present invention relates to a bonding apparatus, a bonding system, a bonding method, a program, and a computer storage medium for bonding substrates together.

  In recent years, semiconductor devices have been highly integrated. When a plurality of highly integrated semiconductor devices are arranged in a horizontal plane and these semiconductor devices are connected by wiring to produce a product, the wiring length increases, thereby increasing the wiring resistance and wiring delay. There is concern about becoming.

  Thus, it has been proposed to use a three-dimensional integration technique in which semiconductor devices are stacked three-dimensionally. In this three-dimensional integration technology, for example, two semiconductor wafers (hereinafter referred to as “wafers”) are bonded using a bonding system described in Patent Document 1. For example, the bonding system includes a surface modification device (surface activation device) that modifies the surface to which the wafer is bonded, a surface hydrophilization device that hydrophilizes the surface of the wafer modified by the surface modification device, And a bonding apparatus for bonding wafers whose surfaces have been hydrophilized by the surface hydrophilizing apparatus. In this bonding system, the surface of the wafer is subjected to plasma treatment in a surface modification device to modify the surface, and the surface is hydrophilized by supplying pure water to the surface of the wafer in the surface hydrophilization device. In the bonding apparatus, the wafers are bonded to each other by van der Waals force and hydrogen bond (intermolecular force).

  In the above bonding apparatus, an upper chuck is used to hold one wafer (hereinafter referred to as “upper wafer”), and another wafer (hereinafter referred to as “lower wafer” using a lower chuck provided below the upper chuck). In this state, the upper wafer and the lower wafer are bonded together. And before joining wafers in this way, the horizontal position of the upper chuck and the lower chuck is adjusted. Specifically, the lower imaging member (chuck camera) is moved in the horizontal direction to image the surface of the upper wafer held on the upper chuck by the lower imaging member and the upper imaging member (bridge camera) in the horizontal direction. The upper chuck member and the lower chuck are horizontally aligned so that the upper wafer reference point coincides with the lower wafer reference point. The position is adjusted.

JP 2012-175043 A

  However, as a result of intensive studies by the inventors, it has been found that when the upper chuck and the lower chuck are configured to be movable in the horizontal direction, the upper chuck and the lower chuck move slightly over time. Further, it has been found that the upper imaging member and the lower imaging member are also configured to be movable, and the upper imaging member and the lower imaging member also move minutely with time.

  In such a case, even if the position adjustment is performed using the upper imaging member and the lower imaging member, the upper chuck and the lower chuck cannot be disposed at relatively appropriate positions in the horizontal direction. For this reason, when joining wafers, there exists a possibility that an upper wafer and a lower wafer may shift and join, and there was room for improvement in joining processing of wafers.

  The present invention has been made in view of such a point, and appropriately adjusts the horizontal position of the first holding unit that holds the first substrate and the second holding unit that holds the second substrate, An object is to appropriately perform a bonding process between substrates.

  In order to achieve the above object, the present invention provides a bonding apparatus for bonding substrates, a processing container for accommodating and bonding a first substrate and a second substrate, and an inside of the processing container A first holding part that is fixed to the processing container and holds the first substrate on the lower surface, and is provided below the first holding part inside the processing container, and a second substrate on the upper surface. A second holding unit that holds the second holding unit, a moving mechanism that moves the second holding unit in the horizontal direction and the vertical direction, and a first holding unit that is provided in the first holding unit and held by the second holding unit. A first imaging unit that images the surface of the second substrate; a second imaging unit that is provided in the second holding unit and that images the surface of the first substrate held by the first holding unit; It is characterized by having.

  According to the present invention, since the first holding unit is fixed to the processing container and the first imaging unit is fixed to the processing container together with the first holding unit, the first holding unit and the first imaging unit are fixed. The part does not move with time. That is, the reliability of the bonding apparatus is improved. In such a joining apparatus, first, the second holding unit is moved in the horizontal direction by the moving mechanism to adjust the horizontal position of the second imaging unit. At this time, since the first imaging unit is fixed to the processing container, it is only necessary to move the second imaging unit, and the horizontal positions of the first imaging unit and the second imaging unit are adjusted appropriately. it can. Thereafter, while moving the second holding unit in the horizontal direction by the moving mechanism, the first imaging unit images the surface of the second substrate held by the second holding unit, and the first holding unit After the surface of the held first substrate is imaged by the second imaging unit, the horizontal position of the second holding unit is adjusted by the moving mechanism. At this time, since the first holding unit is fixed to the processing container, only the second holding unit needs to be moved, and the horizontal positions of the first holding unit and the second holding unit are appropriately adjusted. it can. That is, the adjustment accuracy of the horizontal position of the first holding unit and the second holding unit can be improved. Therefore, thereafter, it is possible to appropriately perform the bonding process between the first substrate held by the first holding unit and the second substrate held by the second holding unit.

  Each of the first imaging unit and the second imaging unit may include a macro lens and a micro lens.

  The second holding unit includes a first height at which a horizontal position adjustment of the first imaging unit and the second imaging unit is performed, and the first holding unit and the second holding unit. The first height is gradually moved upward in a vertical direction to a second height at which the horizontal position is adjusted and a third height at which the first substrate and the second substrate are joined. The vertical distance from the first height to the third height may be set based on the focal length of the first imaging unit and the second imaging unit.

  In such a case, the vertical distance from the first height to the third height is preferably within 50 mm.

  Another aspect of the present invention is a bonding system including the bonding apparatus, wherein a processing station including the bonding apparatus, a first substrate, a second substrate, or a first substrate and a second substrate are provided. A plurality of bonded superposed substrates, and a loading / unloading station for loading / unloading the first substrate, the second substrate, or the superposed substrate to / from the processing station. Surface modifying device for modifying the surface to which the substrate or the second substrate is bonded, and surface hydrophilization for hydrophilizing the surface of the first substrate or the second substrate modified by the surface modifying device An apparatus, and a transfer device for transferring the first substrate, the second substrate, or the superposed substrate to the surface modification device, the surface hydrophilization device, and the bonding device, and the bonding device In the surface hydrophilizing device, the surface is hydrophilic. It is characterized by bonding a first substrate and a second substrate that is.

  Another aspect of the present invention is a bonding method for bonding substrates using a bonding apparatus, the bonding apparatus including a processing container for housing and bonding a first substrate and a second substrate. A first holding part that is fixed to the processing container inside the processing container and holds the first substrate on a lower surface thereof, and is provided below the first holding part inside the processing container. A second holding unit for holding the second substrate on the upper surface, a moving mechanism for moving the second holding unit in the horizontal direction and the vertical direction, and the first holding unit. A first imaging unit that images the surface of the second substrate held by the holding unit, and an image of the surface of the first substrate that is provided in the second holding unit and held by the first holding unit A second imaging unit that performs the joining by using the moving mechanism. A first step of moving the holding unit in the horizontal direction to adjust the horizontal position of the second imaging unit; and then moving the second holding unit in the horizontal direction by the moving mechanism, The surface of the second substrate held by the second holding unit is imaged by the first imaging unit, and the surface of the first substrate held by the first holding unit is taken by the second imaging unit. After the imaging, the second step of adjusting the horizontal position of the second holding unit by the moving mechanism, and then the first substrate held by the first holding unit and the second holding And a third step of joining the second substrate held by the portion so as to face each other.

  The first imaging unit and the second imaging unit each include a macro lens and a micro lens. In the second step, the surface of the second substrate is formed using the macro lens of the first imaging unit. After imaging, the horizontal position of the second holding unit is roughly adjusted by the moving mechanism, and then the surface of the second substrate is imaged using the microlens of the first imaging unit, and the first After imaging the surface of the first substrate using the microlens of the second imaging unit, the horizontal position of the second holding unit may be finely adjusted by the moving mechanism.

  In the first step, the second step, and the third step, the second holding unit is vertically moved upward in stages at the first height, the second height, and the third height, respectively. The vertical distance from the first height to the third height may be set based on the focal length of the first imaging unit and the second imaging unit. .

  In such a case, the vertical distance from the first height to the third height is preferably within 50 mm.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the joining apparatus in order to cause the joining apparatus to execute the joining method.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  According to the present invention, the horizontal positions of the first holding unit that holds the first substrate and the second holding unit that holds the second substrate are appropriately adjusted to appropriately perform the bonding process between the substrates. be able to.

It is a top view which shows the outline of a structure of the joining system concerning this Embodiment. It is a side view which shows the outline of the internal structure of the joining system concerning this Embodiment. It is a side view which shows the outline of a structure of an upper wafer and a lower wafer. It is a cross-sectional view which shows the outline of a structure of a joining apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a joining apparatus. It is a side view which shows the outline of a structure of a position adjustment mechanism. It is a top view which shows the outline of a structure of a reversing mechanism. It is a side view which shows the outline of a structure of the inversion mechanism. It is a side view which shows the outline of a structure of the inversion mechanism. It is a side view which shows the outline of a structure of a holding | maintenance arm and a holding member. It is a side view which shows the outline of the internal structure of a joining apparatus. It is explanatory drawing which shows the outline of a structure of an upper imaging part (lower imaging part). It is a longitudinal cross-sectional view which shows the outline of a structure of an upper chuck and a lower chuck. It is the top view which looked at the upper chuck from the lower part. It is the top view which looked at the lower chuck from the upper part. It is a flowchart which shows the main processes of a wafer joining process. It is explanatory drawing in the side view which shows a mode that the horizontal direction position of an upper imaging part and a lower imaging part is adjusted. It is explanatory drawing in planar view which shows a mode that the horizontal direction position of an upper imaging part and a lower imaging part is adjusted. It is explanatory drawing in the side view which shows a mode that the horizontal direction position of an upper chuck | zipper and a lower chuck | zipper is adjusted. It is explanatory drawing in planar view which shows a mode that the horizontal direction position of an upper chuck | zipper and a lower chuck | zipper is adjusted. It is explanatory drawing in the side view which shows a mode that the horizontal direction position of an upper chuck | zipper and a lower chuck | zipper is adjusted. It is explanatory drawing in planar view which shows a mode that the horizontal direction position of an upper chuck | zipper and a lower chuck | zipper is adjusted. It is explanatory drawing in the side view which shows a mode that the vertical direction position of an upper chuck | zipper and a lower chuck | zipper is adjusted. It is explanatory drawing which shows a mode that the center part of an upper wafer and the center part of a lower wafer are contacted, and are pressed. It is explanatory drawing which shows a mode that an upper wafer is sequentially contact | abutted to a lower wafer. It is explanatory drawing which shows a mode that the surface of the upper wafer and the surface of the lower wafer were made to contact | abut. It is explanatory drawing which shows a mode that the upper wafer and the lower wafer were joined.

  Embodiments of the present invention will be described below. FIG. 1 is a plan view showing the outline of the configuration of the joining system 1 according to the present embodiment. FIG. 2 is a side view illustrating the outline of the internal configuration of the joining system 1.

In the interface system 1, to bond the wafers W _U, W _L as substrate, for example two, as shown in FIG 3. Hereinafter, the wafer disposed on the upper side is referred to as “upper wafer W _U ” as the first substrate, and the wafer disposed on the lower side is referred to as “lower wafer W _L ” as the second substrate. Further, a bonding surface to which the upper wafer W _U is bonded is referred to as “front surface W _U1 ”, and a surface opposite to the front surface W _U1 is referred to as “back surface W _U2 ”. Similarly, the bonding surface to which the lower wafer W _L is bonded is referred to as “front surface W _L1 ”, and the surface opposite to the front surface W _L1 is referred to as “back surface W _L2 ”. Then, in the bonding system 1, by joining the upper wafer W _U and _the lower wafer W _L, to form the overlapped wafer W _T as a polymerization substrate.

As shown in FIG. 1, the bonding system 1 carries in and out cassettes C _U , C _L , and C _T that can accommodate a plurality of wafers W _U and W _L and a plurality of superposed wafers W _T , respectively, with the outside. The loading / unloading station 2 and the processing station 3 including various processing apparatuses that perform predetermined processing on the wafers W _U , W _L , and the overlapped wafer W _T are integrally connected.

The loading / unloading station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the horizontal X direction (vertical direction in FIG. 1). These cassette mounting plates 11, cassettes _C U to the outside of the interface system _1, C L, when loading and unloading the _{C T,} a cassette _{C U,} C L, it is possible to place the _{C T} . Thus, carry-out station 2, a wafer over multiple W _U, a plurality of lower wafer W _L, and is configured to be held by a plurality of overlapped wafer W _T. The number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined. One of the cassettes may be used for collecting abnormal wafers. That is a cassette a wafer abnormality occurs in the bonding of the upper wafer W _U and _the lower wafer W _L, it can be separated from the other normal overlapped wafer W _T by various factors. In the present embodiment, among the plurality of cassettes C _T, using a one cassette C _T for the recovery of the abnormal wafer, and using other cassettes C _T for the accommodation of a normal overlapped wafer W _T.

In the loading / unloading station 2, a wafer transfer unit 20 is provided adjacent to the cassette mounting table 10. The wafer transfer unit 20 is provided with a wafer transfer device 22 that is movable on a transfer path 21 extending in the X direction. The wafer transfer device 22 is also movable in the vertical direction and around the vertical axis (θ direction), and includes cassettes C _U , C _L , C _T on each cassette mounting plate 11 and a third of the processing station 3 described later. The wafers W _U and W _L and the superposed wafer W _T can be transferred between the transition devices 50 and 51 in the processing block G3.

  The processing station 3 is provided with a plurality of, for example, three processing blocks G1, G2, and G3 including various devices. For example, a first processing block G1 is provided on the front side of the processing station 3 (X direction negative direction side in FIG. 1), and on the back side of the processing station 3 (X direction positive direction side in FIG. 1) Two processing blocks G2 are provided. Further, a third processing block G3 is provided on the loading / unloading station 2 side of the processing station 3 (Y direction negative direction side in FIG. 1).

For example, in the first processing block G1, a surface modification device 30 for modifying the surfaces W _U1 and W _L1 of the wafers W _U and W _L is disposed. In the surface modification device 30, for example, in a reduced pressure atmosphere, the oxygen gas that is the processing gas is excited, turned into plasma, and ionized. The oxygen ions are irradiated onto the surfaces W _U1 and W _L1 , and the surfaces W _U1 and W _L1 are plasma-treated and modified.

For example, the second processing block G2 includes, for example, a surface hydrophilizing device 40 that hydrophilizes the surfaces W _U1 and W _L1 of the wafers W _U and W _L with pure water and cleans the surfaces W _U1 and W _{L1. U,} bonding device 41 for bonding the W _L are arranged side by side in the horizontal direction of the Y-direction in this order from the carry-out station 2 side.

In the surface hydrophilizing apparatus 40, for example, wafer W _U held by the spin _chuck, while rotating the W _L, for supplying pure water the wafer W _U, on W _L. Then, the supplied pure water is diffused on the wafer _W U, _{W L} of the surface _{W U1, W L1,} surface _{W U1, W L1} is hydrophilized. The configuration of the joining device 41 will be described later.

For example, the third processing block G3, the wafer _W U as shown in FIG. 2, _{W L,} a transition unit 50, 51 of the overlapped wafer _{W T} are provided in two tiers from the bottom in order.

  As shown in FIG. 1, a wafer transfer region 60 is formed in a region surrounded by the first processing block G1 to the third processing block G3. For example, a wafer transfer device 61 is disposed in the wafer transfer region 60.

The wafer transfer device 61 has, for example, a transfer arm that can move around the vertical direction, horizontal direction (Y direction, X direction), and vertical axis. The wafer transfer device 61 moves in the wafer transfer region 60, and adds wafers W _U , W _L , and W to predetermined devices in the surrounding first processing block G1, second processing block G2, and third processing block G3. You can transfer the overlapping wafer _{W T.}

The above joining system 1 is provided with a controller 70 as shown in FIG. The control unit 70 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling processing of the wafers W _U and W _L and the overlapped wafer W _{T in} the bonding system 1. The program storage unit also stores a program for controlling operations of driving systems such as the above-described various processing apparatuses and transfer apparatuses to realize later-described wafer bonding processing in the bonding system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 70 from the storage medium H.

Next, the structure of the joining apparatus 41 mentioned above is demonstrated. As shown in FIG. 4, the bonding apparatus 41 includes a processing container 100 that can seal the inside. The side surface of the wafer transfer area 60 side of the processing chamber 100, the wafer _W U, _{W L,} the transfer port 101 of the overlapped wafer _{W T} is formed, in the transfer port 101 opening and closing the shutter 102 is provided.

The inside of the processing container 100 is partitioned by the inner wall 103 into a transport area T1 and a processing area T2. The loading / unloading port 101 described above is formed on the side surface of the processing container 100 in the transfer region T1. In addition, on the inner wall 103, a loading / unloading port 104 for the wafers W _U and W _L and the overlapped wafer W _T is formed.

A transition 110 for temporarily placing the wafers W _U and W _L and the superposed wafer W _T is provided on the positive side in the X direction of the transfer region T1. The transition 110 is formed in, for example, two stages, and any two of the wafers W _U , W _L , and the superposed wafer W _T can be placed at the same time.

A wafer transfer mechanism 111 is provided in the transfer area T1. As shown in FIGS. 4 and 5, the wafer transfer mechanism 111 has a transfer arm that can move around, for example, the vertical direction, horizontal direction (Y direction, X direction), and vertical axis. Then, the wafer transfer mechanism 111 can transport within transfer region T1, or a transfer region T1 wafer _W U between the processing region T2, _{W L,} the overlapped wafer _{W T.}

A position adjusting mechanism 120 that adjusts the horizontal direction of the wafers W _U and W _L is provided on the negative side in the X direction of the transfer region T1. As shown in FIG. 6, the position adjusting mechanism 120 includes a base 121, a holding unit 122 that holds and rotates the wafers W _U and W _L by a pin chuck method, and positions of notches of the wafers W _U and W _L. And a detecting unit 123 for detecting Note that the pin chuck method of the holding portion 122 is the same as the pin chuck method in the upper chuck 140 and the lower chuck 141 described later, and thus the description thereof is omitted. In the position adjustment mechanism 120, the position of the notches of the wafers W _U and W _L is detected by the detection unit 123 while rotating the wafers W _U and W _L held by the holding unit 122. The horizontal direction of the wafers W _U and W _L is adjusted by adjusting the position.

Further, in the transfer region T1 is reversing mechanism 130 for reversing the front and rear surfaces of the upper wafer W _U as shown in FIGS. 4 and 5 are provided. Reversing mechanism 130 has a holding arm 131 which holds the upper wafer _{W U} as shown in FIGS. 7-9. The holding arm 131 extends in the horizontal direction (Y direction in FIGS. 7 and 8). Also the holding arm 131 is provided on the holding member 132 for holding the upper wafer W _U, for example four positions. As shown in FIG. 10, the holding member 132 is configured to be movable in the horizontal direction with respect to the holding arm 131. Also on the side surface of the holding member 132, the cutout 133 for holding the outer peripheral portion of the upper wafer W _U is formed. Then, these holding members 132 can be held by sandwiching the upper wafer W _U.

As shown in FIGS. 7 to 9, the holding arm 131 is supported by a first driving unit 134 including, for example, a motor. The holding arm 131 can be rotated around the horizontal axis by the first driving unit 134. The holding arm 131 is rotatable about the first drive unit 134 and is movable in the horizontal direction (Y direction in FIGS. 7 and 8). Below the first drive unit 134, for example, a second drive unit 135 including a motor or the like is provided. The second driving unit 135 allows the first driving unit 134 to move in the vertical direction along the support pillar 136 extending in the vertical direction. This way the first driving unit 134 and the second driving unit 135, _the upper wafer W _U held by the holding member 132 is movable in the vertical direction and the horizontal direction together with the pivotable about a horizontal axis. Further, the upper wafer W _U held by the holding member 132 can move around the first driving unit 134 and move from the position adjusting mechanism 120 to the upper chuck 140 described later.

The processing region T2, the upper chuck 140 as a first holding unit for attracting and holding the upper wafer W _U at the lower surface as shown in FIGS. 4 and 5, the suction holding and mounting the lower wafer W _L with the upper surface A lower chuck 141 is provided as a second holding portion. The lower chuck 141 is provided below the upper chuck 140 and is configured to be disposed so as to face the upper chuck 140. That is, the lower wafer W _L held on the wafer W _U and the lower chuck 141 on which is held by the upper chuck 140 is adapted to be placed opposite.

  As shown in FIGS. 4, 5, and 11, the upper chuck 140 is supported by an upper chuck support 150 provided above the upper chuck 140. The upper chuck support 150 is provided on the ceiling surface of the processing container 100. That is, the upper chuck 140 is fixed to the processing container 100 through the upper chuck support 150.

The upper chuck support 150, and the first upper imaging unit 151 as an imaging unit for imaging the surface W _L1 of the lower wafer W _L held by the lower chuck 141 is provided. That is, the upper imaging unit 151 is provided adjacent to the upper chuck 140. For the upper imaging unit 151, for example, a CCD camera is used. Specifically, the upper imaging unit 151 includes a sensor 152 and a macro lens 153 and a micro lens 154 connected to the sensor 152 as shown in FIG. The macro lens 153 has an imaging range of 6.4 mm × 4.8 mm and can capture a wide range, but the resolution is low. On the other hand, the microlens 154 has an imaging range of 0.55 mm × 0.4 mm and has a narrow resolution but a high resolution.

  As shown in FIGS. 4, 5, and 11, the lower chuck 141 is supported by a first lower chuck moving unit 160 provided below the lower chuck 141. The first lower chuck moving unit 160 is configured to move the lower chuck 141 in the horizontal direction (Y direction) as described later. The first lower chuck moving unit 160 is configured to be able to move the lower chuck 141 in the vertical direction and to rotate about the vertical axis.

The first lower chuck moving unit 160 is provided with a lower imaging unit 161 as a second imaging unit that images the surface W _U1 of the upper wafer W _U held by the upper chuck 140. That is, the lower imaging unit 161 is provided adjacent to the lower chuck 141. For the lower imaging unit 161, for example, a CCD camera is used. Specifically, the lower imaging unit 161 includes a sensor 162 and a macro lens 163 and a micro lens 164 connected to the sensor 162, as shown in FIG. Since the sensor 162, the macro lens 163, and the micro lens 164 are the same as the sensor 152, the macro lens 153, and the micro lens 154 in the upper imaging unit 151, respectively, description thereof is omitted.

  As shown in FIGS. 4, 5, and 11, the first lower chuck moving unit 160 is provided on the lower surface side of the first lower chuck moving unit 160 and extends in the horizontal direction (Y direction). 165 and 165 are attached. The first lower chuck moving unit 160 is configured to be movable along the rail 165.

  The pair of rails 165 and 165 are disposed on the second lower chuck moving portion 166. The second lower chuck moving portion 166 is provided on the lower surface side of the second lower chuck moving portion 166 and is attached to a pair of rails 167 and 167 extending in the horizontal direction (X direction). The second lower chuck moving unit 166 is configured to be movable along the rail 167, that is, configured to move the lower chuck 141 in the horizontal direction (X direction). The pair of rails 167 and 167 are disposed on a mounting table 168 provided on the bottom surface of the processing container 100.

  In the present embodiment, the first lower chuck moving portion 160 and the second lower chuck moving portion 166 constitute the moving mechanism of the present invention.

  Next, detailed configurations of the upper chuck 140 and the lower chuck 141 of the bonding apparatus 41 will be described.

The upper chuck 140 employs a pin chuck system as shown in FIGS. 13 and 14. Upper chuck 140 includes a body portion 170 having at least upper wafer W _U is greater than the diameter in a plan view. A plurality of pins 171 that are in contact with the back surface W _U2 of the upper wafer W _U are provided on the lower surface of the main body 170. In addition, an outer wall portion 172 that supports the outer peripheral portion of the back surface W _U2 of the upper wafer W _U is provided on the lower surface of the main body portion 170. The outer wall portion 172 is annularly provided outside the plurality of pins 171.

The lower surface of the main body portion 170, inner region 173 of the outer wall portion 172 (hereinafter, there. Is referred suction region 173), the suction port 174 for evacuating the upper wafer _{W U} is formed. The suction ports 174 are formed at two locations on the outer periphery of the suction region 173, for example. A suction pipe 175 provided inside the main body 170 is connected to the suction port 174. Further, a vacuum pump 176 is connected to the suction pipe 175 via a joint.

Then, the suction region 173 formed surrounded by the upper wafer W _U , the main body 170 and the outer wall portion 172 is evacuated from the suction port 174, and the suction region 173 is decompressed. At this time, since the outside atmosphere suction region 173 is at atmospheric pressure, the upper wafer W _U is pushed into the suction region 173 side by an amount corresponding atmospheric pressure is reduced, the upper wafer W _U is held by suction on the chuck 140 The

In this case, since the height of the plurality of pins 171 is uniform, the flatness of the lower surface of the upper chuck 140 can be reduced. Thus in the flat lower surface of the upper chuck 140 (by reducing the lower surface flatness), it is possible to suppress the distortion of the vertical direction of the wafer W _U after being held by the upper chuck 140. Since the back surface W _U2 of the upper wafer W _U is supported by a plurality of pins 171, when releasing the vacuum of the upper wafer W _U by the upper chuck 140, being easily separated the on wafer W _U from upper chuck 140 .

A through-hole 177 that penetrates the main body 170 in the thickness direction is formed at the center of the main body 170. The central portion of the body portion 170 corresponds to the central portion of the upper wafer W _U which is sucked and held on the chuck 140. A push pin 181 of a push member 180, which will be described later, is inserted into the through hole 177.

On the upper surface of the upper chuck 140, pressing member 180 for pressing the central portion of the upper wafer W _U it is provided. The pushing member 180 has a cylinder structure, and has a pushing pin 181 and an outer cylinder 182 that serves as a guide when the pushing pin 181 moves up and down. The push pin 181 is vertically movable through the through-hole 177 by, for example, a drive unit (not shown) incorporating a motor. Then, the pressing member 180, the wafer W _U to be described _later, at the time of bonding of W _L, it can be pressed by contacting the center portion of the center and lower wafer W _L of the upper wafer W _U.

As shown in FIGS. 13 and 15, the lower chuck 141 employs a pin chuck system similar to the upper chuck 140. Lower chuck 141 includes a body portion 190 having a greater diameter at least lower wafer W _L in a plan view. The upper surface of the main body portion 190, a plurality of pins 191 in contact with the back surface _{W L2} of the lower wafer _{W L} is provided. Also on the upper surface of the main body portion 190, and an outer wall portion 192 for supporting the outer peripheral portion of the back surface W _L2 of the lower wafer W _L is provided. The outer wall portion 192 is provided in an annular shape outside the plurality of pins 191.

The upper surface of the main body portion 190, inner region 193 of the outer wall portion 192 (hereinafter,. That if there is that the suction region 193), the suction port 194 for evacuating the lower wafer _{W L} are formed. A suction pipe 195 provided inside the main body 190 is connected to the suction port 194. For example, two suction pipes 195 are provided. Further, a vacuum pump 196 is connected to the suction pipe 195.

Then, the suction region 193 formed surrounded by the lower wafer W _L , the main body 190 and the outer wall 192 is evacuated from the suction port 194, and the suction region 193 is decompressed. At this time, since the outside atmosphere suction area 193 is at atmospheric pressure, the lower wafer W _L is pushed by the side suction region 193 by the amount corresponding atmospheric pressure is reduced, the lower wafer W _L is sucked and held on the lower chuck 141 The

In such a case, since the height of the plurality of pins 191 is uniform, the flatness of the upper surface of the lower chuck 141 can be reduced. Further, for example, even when particles are present in the processing container 100, it is possible to suppress the presence of particles on the upper surface of the lower chuck 141 because the interval between the adjacent pins 191 is appropriate. Thus in the flat upper surface of the lower chuck 141 (by reducing the flatness of the upper surface), it is possible to suppress distortion in the vertical direction of the lower wafer W _L held by the lower chuck 141. Since the rear surface W _L2 of the lower wafer W _L is supported by a plurality of pins 191, when releasing the vacuum of the lower wafer W _L by the lower chuck 141, being easily separated the lower wafer W _L from the lower chuck 141 .

  Near the center of the main body 190, through holes 197 that penetrate the main body 190 in the thickness direction are formed, for example, at three locations. The elevating pins provided below the first lower chuck moving portion 160 are inserted into the through holes 197.

The outer periphery of the main body portion 190, the wafer _W U, _{W L,} or jump out from the overlapped wafer _{W T} is lower chuck 141, the guide member 198 to prevent the sliding is provided. The guide member 198 is provided at a plurality of positions, for example, at four positions at equal intervals on the outer peripheral portion of the main body 190.

  Note that the operation of each unit in the bonding apparatus 41 is controlled by the control unit 70 described above.

Next, a method for bonding the wafers W _U and W _L performed using the bonding system 1 configured as described above will be described. FIG. 16 is a flowchart showing an example of main steps of the wafer bonding process.

First, the cassette C _U, the cassette C _L accommodating the lower wafer W _L of the _plurality, and the empty cassette C _T is a predetermined cassette mounting plate 11 of the carry-out station 2 accommodating the wafers W _U on the plurality Placed on. Thereafter, _the upper wafer W _U in the cassette C _U is taken out by the wafer transfer device 22 is conveyed to the transition unit 50 of the third processing block G3 in the processing station 3.

Then the upper wafer W _U is transferred to the surface modification apparatus 30 of the first processing block G1 by the wafer transfer apparatus 61. In the surface reforming apparatus 30, oxygen gas, which is a processing gas, is excited and turned into plasma and ionized under a predetermined reduced-pressure atmosphere. The oxygen ions are irradiated onto the surface W _U1 of the upper wafer W _U , and the surface W _U1 is subjected to plasma treatment. Then, the surface W _U1 of the upper wafer W _U is modified (Step S1 in FIG. 16).

Then the upper wafer W _U is transferred to a surface hydrophilizing apparatus 40 of the second processing block G2 by the wafer transfer apparatus 61. In the surface hydrophilizing device 40, while rotating the upper wafer W _U held by the spin chuck, for supplying pure water onto the onto the wafer W _U. Then, the supplied pure water is diffused over the front surface W _U1 of the upper wafer W _U, the surface W _U1 to hydroxyl (silanol group) in _the upper wafer W _U which are modified in the surface modification apparatus 30 is the attached The surface W _U1 is hydrophilized. Further, the surface W _U1 of the upper wafer W _U is cleaned with the pure water (step S2 in FIG. 16).

Then the upper wafer W _U is transferred to the bonding apparatus 41 of the second processing block G2 by the wafer transfer apparatus 61. Upper wafer _{W U} which is carried into the joining device 41 is conveyed to the position adjusting mechanism 120 by the wafer transfer mechanism 111 via the transition 110. Then the position adjusting mechanism 120, the horizontal orientation of the upper wafer _{W U} is adjusted (step S3 in FIG. 16).

Thereafter, the upper wafer _{W U} is transferred from the position adjusting mechanism 120 to the holding arm 131 of the reversing mechanism 130. Subsequently, in transfer region T1, by reversing the holding arm 131, the front and back surfaces of the upper wafer W _U is inverted (step S4 in FIG. 16). That is, the surface W _U1 of the upper wafer W _U is directed downward.

Thereafter, the holding arm 131 of the reversing mechanism 130 rotates around the first driving unit 134 and moves below the upper chuck 140. Then, the upper wafer W _U is delivered from the reversing mechanism 130 to the upper chuck 140. The upper wafer W _U has its rear surface W _U2 sucked and held on the upper chuck 140 (step S5 in FIG. 16). Specifically, the vacuum pump is activated 176, and vacuum suction area 173 from the suction port 174, the upper wafer _{W U} is attracted and held on the chuck 140.

During the processing of steps S1~S5 described above on the wafer W _U is being performed, the processing of the lower wafer W _L Following the on wafer W _U is performed. First, the lower wafer W _L in the cassette C _L is taken out by the wafer transfer device 22 is conveyed to the transition unit 50 in the processing station 3.

Lower wafer _{W L} is then transported to the surface modifying apparatus 30 by the wafer transfer apparatus 61, the surface _{W L1} of the lower wafer _{W L} is reformed (Step S6 in FIG. 16). Note that modification of the surface _{W L1} of the lower wafer _{W L} in step S6 is the same as step S1 of the aforementioned.

Thereafter, the lower wafer _{W L} is transferred to the surface hydrophilizing apparatus 40 by the wafer transfer apparatus 61, the surface _{W L1} of the lower wafer _{W L} is the surface _{W L1} together is hydrophilized is cleaned (in FIG. 16 step S7 ). Incidentally, hydrophilic and cleaning of the surface W _L1 of the lower wafer W _L in step S7, is similar to the process S2 described above.

Thereafter, the lower wafer _{W L} is transported to the bonding apparatus 41 by the wafer transfer apparatus 61. Lower wafer _{W L} which is transported to the bonding unit 41 is conveyed to the position adjusting mechanism 120 by the wafer transfer mechanism 111 via the transition 110. Then the position adjusting mechanism 120, the horizontal orientation of the lower wafer _{W L} are adjusted (step S8 in FIG. 16).

Thereafter, the lower wafer _{W L} is transferred to the lower chuck 141 by the wafer transfer mechanism 111, the back surface _{W L2} is held by suction to the lower chuck 141 (step S9 in FIG. 16). Specifically, the vacuum pump is activated 196, and vacuum suction area 193 from the suction port 194, the lower wafer _{W L} is sucked and held by the lower chuck 141.

  Next, as shown in FIGS. 17 and 18, the horizontal positions of the upper imaging unit 151 and the lower imaging unit 161 are adjusted (step S10 in FIG. 16). At this time, the lower chuck 141 is disposed such that the surface thereof is positioned at the first height H1.

  In step S10, the lower chuck 141 is moved in the horizontal direction (X direction and X direction by the first lower chuck moving unit 160 and the second lower chuck moving unit 166 so that the lower imaging unit 161 is positioned substantially below the upper imaging unit 151. (Y direction). Then, the common target T is confirmed by the upper imaging unit 151 and the lower imaging unit 161, and the horizontal position of the lower imaging unit 161 is finely adjusted so that the horizontal positions of the upper imaging unit 151 and the lower imaging unit 161 coincide. Is done. At this time, since the upper imaging unit 151 is fixed to the processing container 100, only the lower imaging unit 161 needs to be moved, and the horizontal positions of the upper imaging unit 151 and the lower imaging unit 161 can be adjusted appropriately.

Next, as shown in FIGS. 19 to 22, the horizontal positions of the upper chuck 140 and the lower chuck 141 are adjusted, and the upper wafer W _U held by the upper chuck 140 and the lower wafer held by the lower chuck 141 are adjusted. achieving an adjusted horizontal positions of the W _L (step S11 and S12 in FIG. 16). At this time, the lower chuck 141 is moved vertically upward by the first lower chuck moving portion 160, and the lower chuck 141 is disposed so that the surface thereof is positioned at the second height H2.

A plurality of predetermined points, for example, three reference points A1 to A3 are formed on the surface W _U1 of the upper wafer W _U , and similarly, a plurality of predetermined points, for example, the surface W _L1 of the lower wafer W _L , for example, Three reference points B1 to B3 are formed. Reference point A1, A3 and B1, B3 is the reference point of the outer peripheral portion of the wafer _W U, _{W L,} respectively, reference points A2 and B2 is the reference point of the center portion of the wafer _W U, _{W L,} respectively. As these reference points A1 to A3 and B1 to B3, for example, predetermined patterns formed on the wafers W _L and W _U are used, respectively.

In step S11, the lower chuck 141 is moved in the horizontal direction (X direction and Y direction) by the first lower chuck moving unit 160 and the second lower chuck moving unit 166, and the macro lens 153 of the upper imaging unit 151 is used. imaging the outer peripheral portion 3 points of the front surface _{W L1} of the lower wafer _{W L.} Then the control unit 70, the horizontal position of the three points measured on the basis of the captured image, and calculates the horizontal position of the center portion of the front surface W _L1 of the lower wafer W _L based on the measurement results. Then, by moving the lower chuck 141 in the horizontal direction, to image the heart of the surface W _L1 of the lower wafer W _L (center portion of the chip). Subsequently, the lower chuck 141 is further moved in the horizontal direction, and a chip adjacent to the central chip is imaged. Then the control unit 70, based on the image of the chip adjacent to the chip of the image of the heart, and calculates the inclination of the lower wafer W _L. By thus obtaining the inclination of the horizontal position and the lower wafer W _L of the central part of the lower wafer W _L, coarse coordinates of the lower wafer W _L can be obtained. Then, based on the coarse coordinates of the lower wafer W _L, the horizontal position of the lower chuck 141 is coarse adjustment. Thus the horizontal position of the upper wafer W _U and the lower wafer W _L is coarse adjustment.

Incidentally, the coarse adjustment of the horizontal position in step S11, at least in later step S12, the upper imaging unit 151 can image the reference point B1~B3 the lower wafer _{W L,} also lower the imaging unit 161 of the upper wafer _{W U} It is performed at a position where the reference points A1 to A3 can be imaged.

In subsequent step S12, the first lower chuck moving unit 160 and the second lower chuck moving unit 166 move the lower chuck 141 in the horizontal direction (X direction and Y direction), and the micro lens of the upper imaging unit 151 is moved. successively imaging the reference point B1~B3 surface _{W L1} of the lower wafer _{W L} with 154. At the same time, successively imaging the reference point A1~A3 surface _{W U1} of the upper wafer _{W U} by using a micro lens 164 of the lower imaging unit 161. Incidentally, FIGS. 19 and 20 together to capture the reference point B1 of the lower wafer _{W L} by the upper imaging section 151, it illustrates how imaging the reference point A1 of the surface _{W U1} of the upper wafer _{W U} by the lower imaging unit 161, 21 and 22 are both images the reference point B2 of the lower wafer _{W L} by the upper imaging unit 151 shows a state in which imaging the reference point A2 of the surface _{W U1} of the upper wafer _{W U} by the lower imaging unit 161. The captured visible light image is output to the control unit 70. In the control unit 70, based on the captured visible light image with the visible light image and the lower image pickup unit 161 captured by the upper imaging unit 151, the reference point of the upper wafer W _U reference point A1~A3 and lower wafer W _L of The lower chuck 141 is moved by the first lower chuck moving unit 160 and the second lower chuck moving unit 166 to a position where B1 to B3 match each other. Thus the horizontal position of the upper wafer W _U and the lower wafer W _L is finely adjusted. At this time, since the upper chuck 140 is fixed to the processing container 100, it is only necessary to move the lower chuck 141, the horizontal positions of the upper chuck 140 and the lower chuck 141 can be adjusted appropriately, and the upper wafer W _U the horizontal position of the lower wafer W _L can be appropriately adjusted.

  The fine adjustment of the horizontal position in step S12 is performed by moving the lower chuck 141 in the horizontal direction (X direction and Y direction) as described above and rotating the lower chuck 141 by the first lower chuck moving unit 160. Thus, the direction of the lower chuck 141 is also finely adjusted.

Thereafter, adjustment of the vertical position of the upper chuck 140 and lower chuck 141 as shown in FIG. 23, the lower wafer W _L held on the wafer W _U and the lower chuck 141 on which is held on the on the chuck 140 The vertical position is adjusted (step S13 in FIG. 16). At this time, the lower chuck 141 is moved vertically upward by the first lower chuck moving section 160, and the lower chuck 141 is disposed so that the surface thereof is positioned at the third height H3. At this time, the distance between the surface W _L1 of the lower wafer W _L and the surface W _U1 of the upper wafer W _U is a predetermined distance, for example, 50 μm to 200 μm. Then, in the vertical position (third height H3), bonding process of upper wafer W _U and _the lower wafer W _L is performed.

  The vertical distance ΔH (= H3−H1) from the first height H1 to the third height H3 is the focal point of the macro lens 153 (163) in the upper imaging unit 151 (lower imaging unit 161). Set based on distance. Specifically, the vertical distance ΔH is within 50 mm.

Next, the bonding process of the lower wafer W _L held on the wafer W _U and the lower chuck 141 on which is held by the upper chuck 140 is performed.

First, by lowering the pushing pin 181 of the pressing member 180 as shown in FIG. 24, while pressing the center portion of the upper wafer W _U lowering the on wafer W _U. At this time, a load, for example, 200 g, is applied to the push pin 181 so that the push pin 181 moves by 70 μm without the upper wafer W _U. Then, the pressing member 180 is pressed by abutting the central portion of the central portion and the lower wafer _{W L} of the upper wafer _{W U} (step S14 in FIG. 16). At this time, since the suction port 174 of the upper chuck 140 is formed on the outer peripheral portion of the suction area 173, even when pressing the central portion of the upper wafer W _U by pressing member 180, the upper by the upper chuck 140 wafers W The outer periphery of _U can be held.

Then, the bonding is started between the central portion of the central portion and the lower wafer W _L of _the upper wafer W _U which pressed (thick line portion in FIG. 24). That is, since the surface W _U1 of the upper wafer W _U and the surface W _L1 of the lower wafer W _L are modified in steps S1 and S6, respectively, first, the van der Waals force (intermolecular) between the surfaces W _U1 and W _L1. Force) is generated, and the surfaces W _U1 and W _L1 are joined to each other. Furthermore, since the surface W _U1 of the upper wafer W _U and the surface W _L1 of the lower wafer W _L are hydrophilized in steps S2 and S7, respectively, hydrophilic groups between the surfaces W _U1 and W _L1 are hydrogen bonded (intermolecular). Force), the surfaces W _U1 and W _L1 are firmly bonded to each other.

Then, to stop the operation of the vacuum pump 176 while pressing the center portion of the center and lower wafer W _L of the upper wafer W _U by the pressing member 180 as shown in FIG. 25, the upper in the suction region 173 the wafer W Stop evacuation of _U. Then, the upper wafer _{W U} falls onto the lower wafer _{W L.} At this time, since the back surface W _U2 of the upper wafer W _U is supported by a plurality of pins 171, when releasing the vacuum of the upper wafer W _U by the upper chuck 140, the on wafer W _U is peeled from the upper chuck 140 It is easy. And toward the outer periphery from the center of the upper wafer W _U, stop evacuation of the upper wafer W _U, the upper wafer W _U abuts sequentially drop onto the lower wafer W _L, the surface W _U1 mentioned above, bonding by the van der Waals forces and hydrogen bonds between W _L1 are sequentially spreads. Thus, contact surface _{W U1} and the surface _{W L1} of the lower wafer _{W L} of the upper wafer _{W U} is on the whole surface as shown in FIG. 26, _the upper wafer _{W U} and _the lower wafer _{W L} is bonded (step of FIG. 16 S15 ).

Thereafter, as shown in FIG. 27, the push pin 181 of the push member 180 is raised to the upper chuck 140. Further, to stop the operation of the vacuum pump 196, to stop the evacuation of the lower wafer W _L in the suction area 193, it stops the suction holding of the lower wafer W _L by the lower chuck 141. At this time, since the back surface W _L2 of the lower wafer W _L is supported by a plurality of pins 191, when releasing the vacuum of the lower wafer W _L by the lower chuck 141, peeling the under wafer W _L from the lower chuck 141 It is easy.

The upper wafer W _U and _the lower wafer W _L overlapped wafer bonded W _T is transferred to the transition unit 51 by the wafer transfer apparatus 61, then carry out by the wafer transfer apparatus 22 of the station 2 of a predetermined cassette mounting plate 11 It is conveyed to the cassette _{C T.} Thus, a series of wafers _W U, bonding process of _{W L} is completed.

According to the above embodiment, since the upper chuck 140 is fixed to the processing container 100 and the upper imaging unit 151 is also fixed to the processing container 100, the upper chuck 140 and the upper imaging unit 151 move with time. There is nothing. That is, the reliability of the joining device 41 is improved. In step S10, since the upper imaging unit 151 is fixed to the processing container 100, it is only necessary to move the lower imaging unit 161, and the horizontal positions of the upper imaging unit 151 and the lower imaging unit 161 can be appropriately adjusted. . In steps S11 and S12, since the upper chuck 140 is fixed to the processing container 100, only the lower chuck 141 needs to be moved, and the horizontal positions of the upper chuck 140 and the lower chuck 141 can be adjusted appropriately. the horizontal position of the upper wafer W _U and _the lower wafer W _L can be appropriately adjusted. That is, it is possible to improve the regulation accuracy of the horizontal position of the upper wafer W _U and _the lower wafer W _L. Accordingly, in the subsequent step S14 and step S15, it is possible to perform the bonding process of the upper wafer _{W U} and _the lower wafer _{W L} properly.

Further, since the upper imaging unit 151 and the lower imaging unit 161 include macro lenses 153 and 163 and micro lenses 154 and 164, respectively, the horizontal position adjustment of the upper chuck 140 and the lower chuck 141 is performed stepwise in steps S11 and S12. Can be done. Therefore, it is possible to perform the on chuck 140 and adjust the horizontal position of the lower chuck 141, i.e., the adjusted horizontal position of the upper wafer W _U and _the lower wafer W _L efficiently.

In addition, the horizontal position adjustment of the upper imaging unit 151 and the lower imaging unit 161 in the process S10 is performed at the first height H1, and the horizontal position adjustment of the upper chuck 140 and the lower chuck 141 in the processes S11 and S12 is the second. performed at the level H2, bonding of _the upper wafer _{W U} and _the lower wafer _{W L} in step S14 and S15 are performed by the third height H3. In this embodiment, the vertical distance ΔH (= H3−H1) from the first height H1 to the third height H3 is the macro lens 153 (163 in the upper imaging unit 151 (lower imaging unit 161). ), Specifically, the vertical distance ΔH is within 50 mm. That is, the vertical movement distance of the lower chuck 141 is within 50 mm.

  Here, when the upper imaging member (bridge camera) is moved as in the prior art, a vertical space is required for the upper imaging member to move, so the first height H1 to the third height. The vertical distance ΔH up to H3 is required to be at least 70 mm.

  In this regard, according to the present embodiment, since the upper imaging unit 151 is fixed to the processing container 100 and does not move, the vertical distance ΔH is a distance that can secure at least the focal distance of the upper imaging unit 151 (lower imaging unit 161). If it is. For this reason, the vertical direction distance ΔH can be suppressed to within 50 mm, and the vertical direction distance ΔH can be suppressed to be smaller than the conventional distance. That is, the vertical movement distance of the lower chuck 141 can be suppressed to be smaller than the conventional distance. Then, the position adjustment error of the lower chuck 141 accompanying the movement of the lower chuck 141 can be suppressed, and the horizontal position of the chuck 140 and the lower chuck 141 can be adjusted more appropriately.

Further, since the conventional is not necessary to move the upper imaging member (bridge camera) so, it is possible to improve the throughput of the bonding process of the upper wafer W _U and _the lower wafer W _L.

  Furthermore, since there is no need to move the upper imaging member (bridge camera) as in the prior art, the moving mechanism can be omitted, and the footprint of the joining device 41 can be reduced. Further, with the omission of the moving mechanism, the manufacturing cost of the joining device 41 can be reduced, and the power consumption in the joining device 41 can be reduced.

In addition to the bonding apparatus 41, the bonding system 1 includes a surface modifying apparatus 30 that modifies the surfaces W _U1 and W _L1 of the wafers W _U and W _L , and the surfaces W _U1 and W _L1 are made hydrophilic and the surfaces are made hydrophilic. Since the surface hydrophilizing device 40 for cleaning W _U1 and W _L1 is also provided, the wafers W _U and W _L can be efficiently bonded in one system. Accordingly, the throughput of the wafer bonding process can be further improved.

  In the joining apparatus 41 of the above embodiment, the upper chuck 140 is fixed to the processing container 100 and the lower chuck 141 is moved in the horizontal direction and the vertical direction. On the contrary, the upper chuck 140 is moved in the horizontal direction and the vertical direction. And the lower chuck 141 may be fixed to the processing container 100. However, moving the upper chuck 140 requires a larger moving mechanism, so it is preferable to fix the upper chuck 140 to the processing container 100 as in the above embodiment.

In the bonding system 1 of the above embodiment, after bonding the wafers W _U and W _L by the bonding apparatus 41, the bonded wafer W _T may be further heated (annealed) at a predetermined temperature. By performing the heat treatment according to the overlapped wafer W _T, it is possible to more firmly bond the bonding interface.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

DESCRIPTION OF SYMBOLS 1 Joining system 2 Carrying in / out station 3 Processing station 30 Surface modification apparatus 40 Surface hydrophilization apparatus 41 Joining apparatus 61 Wafer transfer apparatus 70 Control part 100 Processing container 140 Upper chuck 141 Lower chuck 151 Upper imaging part 153 Macro lens 154 Micro lens 160 First lower chuck moving unit 161 Lower imaging unit 163 Macro lens 164 Micro lens 166 Second lower chuck moving unit T Target W _U upper wafer W _L lower wafer W _T superposition wafer

Claims (11)

A joining device for joining substrates,
A processing container for containing and bonding the first substrate and the second substrate;
A first holding unit that is fixed to the processing vessel inside the processing vessel and holds a first substrate on a lower surface;
A second holding part that is provided below the first holding part inside the processing container and holds the second substrate on the upper surface;
A moving mechanism for moving the second holding portion in a horizontal direction and a vertical direction;
A first imaging unit that is provided in the first holding unit and images the surface of the second substrate held by the second holding unit;
And a second imaging unit that images the surface of the first substrate held by the first holding unit. The joining apparatus according to claim 1, wherein each of the first imaging unit and the second imaging unit includes a macro lens and a micro lens. The second holding part is
A first height at which a horizontal position adjustment of the first imaging unit and the second imaging unit is performed;
A second height at which the horizontal position of the first holding part and the second holding part is adjusted;
The first substrate and the second substrate are moved upward in the vertical direction step by step to the third height at which the second substrate is bonded,
The vertical distance from the first height to the third height is set based on a focal distance between the first imaging unit and the second imaging unit. Or the joining apparatus of 2. 4. The joining apparatus according to claim 3, wherein a vertical distance from the first height to the third height is within 50 mm. A joining system comprising the joining device according to claim 1,
A processing station comprising the joining device;
Each of the first substrate, the second substrate, or a plurality of superposed substrates bonded with the first substrate and the second substrate can be held, and the first substrate, the second substrate, or the superposed over the processing station. A loading / unloading station for loading and unloading substrates,
The processing station is
A surface modification device for modifying a surface to which the first substrate or the second substrate is bonded;
A surface hydrophilizing device for hydrophilizing the surface of the first substrate or the second substrate modified by the surface modifying device;
A transport device for transporting the first substrate, the second substrate, or the polymerized substrate to the surface modification device, the surface hydrophilization device, and the bonding device;
In the joining apparatus, the first substrate and the second substrate whose surfaces are hydrophilized by the surface hydrophilizing device are joined together. A bonding method for bonding substrates using a bonding apparatus,
The joining device includes:
A processing container for containing and bonding the first substrate and the second substrate;
A first holding unit that is fixed to the processing vessel inside the processing vessel and holds a first substrate on a lower surface;
A second holding part that is provided below the first holding part inside the processing container and holds the second substrate on the upper surface;
A moving mechanism for moving the second holding portion in a horizontal direction and a vertical direction;
A first imaging unit that is provided in the first holding unit and images the surface of the second substrate held by the second holding unit;
A second imaging unit that is provided in the second holding unit and images the surface of the first substrate held by the first holding unit;
The joining method is:
A first step of adjusting the horizontal position of the second imaging unit by moving the second holding unit in the horizontal direction by the moving mechanism;
Then, while moving the second holding unit in the horizontal direction by the moving mechanism, the surface of the second substrate held by the second holding unit is imaged by the first imaging unit, and the first imaging unit A second step of adjusting the horizontal position of the second holding unit by the moving mechanism after imaging the surface of the first substrate held by one holding unit by the second imaging unit;
And a third step of joining the first substrate held by the first holding portion and the second substrate held by the second holding portion so as to face each other. And joining method. The first imaging unit and the second imaging unit each include a macro lens and a micro lens,
In the second step,
After imaging the surface of the second substrate using the macro lens of the first imaging unit, coarse adjustment of the horizontal position of the second holding unit by the moving mechanism,
Thereafter, the surface of the second substrate is imaged using the microlens of the first imaging unit, the surface of the first substrate is imaged using the microlens of the second imaging unit, and then the movement is performed. The joining method according to claim 6, wherein the horizontal position of the second holding portion is finely adjusted by a mechanism. In the first step, the second step, and the third step, the second holding unit is vertically moved upward in stages at the first height, the second height, and the third height, respectively. Is done by moving to
The vertical distance from the first height to the third height is set based on a focal length between the first imaging unit and the second imaging unit. Or the joining method of 7. The joining method according to claim 8, wherein a vertical distance from the first height to the third height is within 50 mm. A program that operates on a computer of a control unit that controls the joining apparatus in order to cause the joining apparatus to execute the joining method according to claim 6. A readable computer storage medium storing the program according to claim 10.

Images