WO2020162067A1 - Sulfurization detection resistor - Google Patents

Sulfurization detection resistor Download PDF

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Publication number
WO2020162067A1
WO2020162067A1 PCT/JP2019/050684 JP2019050684W WO2020162067A1 WO 2020162067 A1 WO2020162067 A1 WO 2020162067A1 JP 2019050684 W JP2019050684 W JP 2019050684W WO 2020162067 A1 WO2020162067 A1 WO 2020162067A1
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Prior art keywords
sulfurization
detection
resistor
sulfuration
conductor
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PCT/JP2019/050684
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French (fr)
Japanese (ja)
Inventor
松本　健太郎
太郎 木村
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Koa株式会社
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Publication of WO2020162067A1 publication Critical patent/WO2020162067A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N17/00—Investigating resistance of materials to the weather, to corrosion, or to light
    • G01N17/04—Corrosion probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance

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  • the present invention relates to a sulfurization detection resistor for detecting the cumulative amount of sulfurization in a corrosive environment.
  • an Ag (silver)-based electrode material having a low specific resistance is used as an internal electrode of an electronic component such as a chip resistor, but silver becomes silver sulfide when exposed to a sulfide gas, and silver sulfide becomes Since it is an insulator, there is a problem that the electronic component is disconnected. Therefore, in recent years, sulfuration countermeasures have been taken such as adding Pd (palladium) or Au (gold) to Ag to form an electrode that is less likely to be sulfurized, or making the electrode a structure in which sulfurized gas does not easily reach.
  • Patent Document 1 it is possible to detect the cumulative degree of sulfidation of an electronic component and detect the risk before the electronic component fails due to a sulfidation disconnection or the like. Detection sensors have been proposed.
  • a sulfurization detection body mainly composed of Ag is formed on an insulating substrate, and a transparent protective film having sulfur gas permeability is formed so as to cover the sulfurization detection body.
  • the end surface electrodes connected to the sulfuration detector are formed on both ends of the insulating substrate.
  • the color of the sulfide detector changes according to the concentration of the sulfide gas and the elapsed time. This allows the color change of the sulfuration detector to be viewed through the protective film, the reflected light from the sulfurization detector of the light irradiated on the upper surface of the sulfurization detector to be detected, or the resistance value of the sulfuration detector to be detected.
  • the degree of sulfurization is detected by detecting the change in.
  • the sulfurization detector is a conductor mainly composed of Ag having a low specific resistance, the change in the resistance value of the sulfurization detector due to the cumulative amount of sulfurization is very small, and Ag has an extremely high temperature characteristic (TCR). Since the resistance value changes greatly with temperature, it is difficult to accurately detect the degree of sulfurization based on the change in the resistance value of the sulfuration detector.
  • the present invention has been made in view of the actual situation of the prior art as described above, and an object thereof is to provide a sulfidation detection resistor capable of accurately and easily detecting the degree of sulfidation.
  • the sulfuration detection resistor of the present invention is a rectangular parallelepiped insulating substrate, a pair of front electrodes formed at both ends of the main surface of the insulating substrate, and one of the front electrodes.
  • a plurality of sulfurization detection conductors containing copper as a main component connected in parallel, a plurality of resistors connected between the other front electrode and the sulfurization detection conductor, the entire resistor and the sulfurization detection A protective film formed so as to cover a part of the conductor, wherein the sulfurization detection conductor has a sulfurization detection portion facing each other with a predetermined gap, without being covered by the protection film. It is characterized in that the gap formed in the sulfurization detecting conductor is conducted at different timings due to cumulative sulfurization of the sulfurization detecting portion.
  • each pair of sulfurization detection conductors has a predetermined structure. It has a sulfur detection part facing each other across a gap, and the copper sulfide crystals generated by exposure to the sulfur gas expand and straddle the gap so that the sulfur detection conductors of each set conduct at different times.
  • the resistance value change between the pair of front electrodes gradually changes, and the degree of sulfidation can be accurately and easily detected.
  • the sulfuration detection resistor having the above structure if the plurality of sulfurization detection conductors are formed of materials having different copper contents, even if the gaps of the sulfurization detection conductors have the same gap, The timing at which the detection conductors conduct can be different.
  • each sulfurization detection conductor has gaps with different intervals, even if each sulfurization detection conductor is made of a material having the same composition, each pair of sulfurization detection conductors is detected.
  • the timing at which the conductors conduct can be different.
  • the sulfuration detection resistor having the above structure when the protective film is formed so as to cover the connection between the plurality of sulfurization detection conductors and one of the front electrodes, the front electrode and the sulfurization detection unit are separated by the protective film. Therefore, it is possible to prevent the sulfuration detection portion from being covered with the solder when the sulfuration detection resistor is mounted on the circuit board by soldering. Further, when the front electrode is made of Ag or the like, it is possible to prevent unexpected conduction of the sulfurization detecting portion due to migration to the sulfurization detecting conductor side.
  • the strip-shaped protective film covers the widthwise edge side of the sulfuration detection portion.
  • the conduction ensuring circuit section is arranged in parallel with the sulfuration detecting conductor between the pair of front electrodes, and the conduction ensuring circuit section is composed of a resistor and a conductor connected in series.
  • the conduction ensuring circuit section can secure conduction between both surface electrodes in the initial state before the plural sulfurization detection sections are conducted. it can.
  • the resistance value of the resistance element of the conduction ensuring circuit is set lower than the resistance values of the other resistance elements connected to the sulfurization detection conductor, when the sulfurization detection conductor becomes conductive, Since a large amount of current flows in the circuit for ensuring continuity that has a resistor with a low resistance value, the load will be reduced if the copper sulfide crystal slightly contacts between the sulfurization detection parts of the sulfurization detection conductor, and unnecessary overload disconnection will occur. Etc. can be prevented.
  • the sulfuration detecting resistor having the above-mentioned configuration, among the resistor and the sulfurization detecting conductor which are continuously formed between the pair of front electrodes, a trimming groove is formed in the resistor and both end portions of the resistor are formed. If the sulfurization detection conductor and the measurement conductor are connected to, when trimming the resistance values of the resistors in each set, attach a probe to the sulfurization detection conductor and the measurement conductor connected to both ends of each resistor. Trimming can be performed while abutting.
  • the sulfuration detection resistor having the above-mentioned configuration if the gap existing between the sulfurization detection portions of the sulfurization detection conductor has a meandering shape, it is possible to interpose a long-length gap within the limited width dimension of the sulfurization detection conductor. Therefore, the range for detecting the continuity becomes longer, and the detection accuracy can be improved.
  • FIG. 2 is a sectional view taken along the line II-II in FIG. 1. It is a top view which shows the manufacturing process of this sulfurization detection resistor. It is sectional drawing which shows the manufacturing process of this sulfurization detection resistor. It is explanatory drawing which shows the relationship between the cumulative sulfurization amount and resistance value in this sulfurization detection resistor. It is a top view of a sulfurization detection resistor concerning the example of a 2nd embodiment of the present invention. It is a top view of a sulfurization detection resistor concerning the example of a 3rd embodiment of the present invention.
  • FIG. 1 is a plan view of a sulfuration detection resistor according to a first embodiment of the present invention
  • FIG. 2 is a cross section taken along line II-II of FIG. It is a figure.
  • the sulfurization detection resistor 10 includes a rectangular parallelepiped insulating substrate 1 and a first front electrode provided on both ends of the surface of the insulating substrate 1 in the longitudinal direction. 2 and the second front electrode 3, a plurality of (three in the present embodiment) sulfurization detection conductors 4 connected in parallel to the first front electrode 2, and between each sulfurization detection conductor 4 and the second front electrode 3.
  • the insulating substrate 1 is a large-sized substrate, which will be described later, divided along vertical and horizontal dividing grooves to obtain a large number, and the large-sized substrate is mainly made of alumina and is a ceramics substrate.
  • the first front electrode 2 and the second front electrode 3 are formed by screen-printing a Cu-based paste containing copper as a main component, followed by drying and firing, and the first front electrode 2 and the second front electrode 3 are arranged at predetermined intervals.
  • the insulating substrate 1 is formed at both ends in the longitudinal direction so as to be opposed to each other.
  • the pair of back electrodes 7 are also made by screen-printing a Cu-based paste containing copper as a main component, and drying and firing the back electrodes 7. These back electrodes 7 are the first front electrode 2 and the second front electrode on the front surface side of the insulating substrate 1. It is formed at a position corresponding to 3.
  • the three sulfurization detection conductors 4 connected in parallel to the first front electrode 2 were screen-printed with a Cu-based paste containing copper as a main component, dried and fired.
  • the content of nickel) is different.
  • the sulfurization detection conductor 4 located in the upper part of FIG. 1 is made of Cu paste containing no Ni
  • the sulfurization detection conductor 4 located in the middle part of FIG. 1 is made of Cu—Ni paste containing 5% of Ni.
  • the sulfurization detection conductor 4 located in the lower part of FIG. 1 is made of Cu—Ni paste containing 10% Ni.
  • a slit-shaped gap G extending along the width direction is formed in the central portion of the sulfurization detecting conductor 4, and the gap G is set to the same size in each sulfurization detecting conductor 4.
  • the plurality of resistors 5 are made by screen-printing a resistor paste such as Cu-Ni and drying and firing. Both ends of the resistor 5 are connected to the sulfurization detection conductor 4 and the second front electrode 3, and a series circuit portion of the pair of sulfurization detection conductor 4 and the resistor 5 is connected to the first front electrode 2 and the second front electrode 3. And 3 sets are connected in parallel.
  • the protective film 6 has a two-layer structure of an undercoat layer and an overcoat layer, of which the undercoat layer is a screen-printed glass paste which is dried and baked, and the overcoat layer is a screen-printed epoxy resin paste. Then, it is cured by heating.
  • the protective film 6 is formed so as to cover the entire portion of each resistor 5 and the portion excluding the central portion of each sulfurization detecting conductor 4, and the central portion of each sulfurating detection conductor 4 exposed from the protective film 6 to the outside is The pair of sulfurization detection portions 4a are opposed to each other with a gap G therebetween.
  • one (left side in the drawing) protective film 6 extends to a position covering the connection portion between the first front electrode 2 and each sulfurization detecting conductor 4.
  • the other protective film 6 (on the right side in the drawing) extends to a position that covers the connection between the second front electrode 3 and each resistor 5.
  • the pair of end face electrodes 8 are formed by sputtering Ni/Cr on the end faces of the insulating substrate 1 or by applying an Ag-based paste and heating and curing the end faces electrodes 8 and the corresponding first front electrode 2 and back face.
  • the electrodes 7 and the second front electrode 3 and the back electrode 7 are electrically connected to each other.
  • the pair of external electrodes 9 has a two-layer structure of a barrier layer and an external connection layer, of which the barrier layer is a Ni plating layer formed by electrolytic plating, and the external connection layer is a Sn plating layer formed by electrolytic plating. ..
  • the surfaces of the first front electrode 2 and the second front electrode 3 exposed from the protective film 6 and the surfaces of the back electrode 7 and the end face electrode 8 are covered with these external electrodes 9, respectively.
  • FIGS. 3A to 3F are plan views of a large-sized substrate used in this manufacturing process as seen from the surface, and FIGS. 4A to 4F are A of FIGS. 3A to 3F. Each of the cross-sectional views corresponding to one chip along the line -A is shown.
  • a large-sized board from which a large number of insulating boards 1 can be taken.
  • the large-sized substrate is preliminarily provided with primary dividing grooves and secondary dividing grooves in a grid pattern, and each of the cells divided by the dividing grooves serves as a chip region for one piece.
  • a large-sized substrate 10A corresponding to one chip area is shown as a representative, but in reality, each large-sized substrate corresponding to a large number of chip areas is subjected to the steps described below collectively. Is done.
  • a Cu-based paste containing copper as a main component is screen-printed on the surface of the large-sized substrate 10A and dried and baked to form a gap G.
  • the three sulfurization detection conductors 4 connected to the first front electrode 2 are formed. These three sulfurization detection conductors 4 are different in the content of Ni contained in Cu.
  • the reference symbols 4A, 4B, and 4C are added to the respective sulfurization detection conductors 4 in the drawing in order from the top.
  • 4A is made of Cu containing no Ni at all
  • the sulfurized detection conductor 4B is made of Cu-Ni containing 5% of Ni
  • the sulfurized detection conductor 4C is made of Cu-Ni containing 10% of Ni.
  • a resistor paste such as Cu-Ni is screen-printed, dried and fired, so that both ends are sulfurized detection conductors 4 (4A, 4B) as shown in FIGS. 3(c) and 4(c). , 4C) and three resistor bodies 5 connected to the second front electrode 3 are formed.
  • the glass paste is dried and fired to form an undercoat layer.
  • a trimming groove (not shown) is formed to adjust the resistance value.
  • an epoxy resin paste is screen-printed on the undercoat layer and heat-cured to remove each of the sulfurization detection conductors 4A, 4B, and 4C as shown in FIGS. 3(d) and 4(d).
  • a protective film 6 having a two-layer structure is formed so as to cover a part and the whole of each resistor 5.
  • the central portion of each of the sulfurization detecting conductors 4A, 4B, and 4C is exposed from the protective film 6, and this exposed portion becomes the sulfurization detecting portion 4a facing each other through the gap G.
  • the connection portion between the first front electrode 2 and each of the sulfurization detection conductors 4A, 4B, 4C is covered with the protective film 6, and the connection portion between the second front electrode 3 and each resistor 5 is also covered with the protective film 6.
  • the sulfuration detection portions 4a of the sulfurization detection conductors 4A, 4B, and 4C are covered with a masking (not shown) made of a soluble material or the like, and in this state, the large-sized substrate 10A is primary-coated on the strip-shaped substrate 10B along the primary dividing grooves.
  • Ni/Cr is sputtered on the division surface of the strip-shaped substrate 10B so that the first front electrode 2 and the back electrode 7 and the second front electrode 7 and the back electrode 7 are separated from each other as shown in FIGS. 3(e) and 4(e).
  • An end face electrode 8 connecting the front electrode 3 and the back electrode 7 is formed.
  • the end face electrode 8 may be formed by applying an Ag-based paste and curing it by heating.
  • the strip-shaped substrate 10B is secondarily divided into a plurality of chip-shaped substrates 10C along the secondary dividing grooves, and these chip-shaped substrates 10C are subjected to electrolytic plating to form a Ni—Sn plated layer.
  • the masking described above is removed using a solvent.
  • the external electrodes 9 are formed on the surfaces of the first front electrode 2, the second front electrode 3, the back electrode 7, and the end face electrode 8. , 2 is completed.
  • FIG. 5 is an explanatory diagram showing the relationship between the cumulative sulfurization amount and the resistance value when the sulfurization detection resistor 10 according to the present embodiment is arranged in a sulfurization gas atmosphere.
  • the three sulfurization detection conductors 4 that are arranged in parallel between the first front electrode 2 and the second front electrode 3 ( Since the gap G is formed in 4A, 4B, 4C), the initial resistance value of the sulfuration detection resistor 10 is in the open state.
  • this sulfurization detecting resistor 10 When this sulfurization detecting resistor 10 is placed in an atmosphere containing a sulfurization gas, the sulfurization detecting portions 4a of the sulfurization detecting conductors 4 come into contact with the sulfurization gas, so that the copper sulfide crystals generated in the sulfurization detecting portion 4a form the gap G. It gradually expands inward.
  • the three sulfurization detection conductors 4 are formed of materials having different copper contents, and in the case of the present embodiment example, the sulfurization detection conductors 4 (4A) on the upper side of FIG. Since the content is the largest, the gap G existing between the sulfurization detection portions 4a of the sulfurization detection conductor 4 is short-circuited via the copper sulfide as the cumulative sulfurization amount increases.
  • the first front electrode 2 and the second front electrode 3 are electrically connected to each other through the sulfurization detection conductor 4 (4A) on the upper stage side and the resistor 5 connected thereto, and the resistance value of each resistor 5 is, for example, R. Then, the resistance value R of one resistor 5 is detected from the sulfurization detection resistor 10.
  • the gap G existing between the sulfurization detection portions 4a of the sulfurization detection conductor 4 (4C) on the lower side having the third highest copper content is also short-circuited via the copper sulfide.
  • the first front electrode 2 and the second front electrode 3 are electrically connected via the upper, middle, and lower sulfurization detection conductors 4 (4A, 4B, 4C) connected in parallel and the resistor 5 connected to them. Since the state is brought into the state, the resistance value R/3 corresponding to the three resistors 5 connected in parallel is detected from the sulfurization detection resistor 10.
  • each set of the sulfidation detecting conductors 4 has a sulfidation detecting portion 4a facing each other through a predetermined gap G, and the copper sulfide crystals generated by being exposed to the sulfiding gas are extended to form the gap G.
  • the sulfurization detection conductors 4 of each set are brought into conduction at different timings, so that the resistance value change between the pair of front electrodes 2 and 3 gradually changes to accurately and accurately determine the degree of sulfurization. It can be easily detected.
  • the set of the sulfuration detection conductor 4 and the resistor 5 connected in parallel between the first front electrode 2 and the second front electrode 3 is not limited to three sets as in the present embodiment, but two sets or four sets. It may be more.
  • each sulfurization detection conductor 4 has a different copper content as a means for making the timing of conduction between the sulfurization detection portions 4a of the plurality of sulfurization detection conductors 4 different. Since it is formed by using a Cu-based paste having a different Ni content, the sulfurization detection conductor 4 suitable for the application can be obtained by adjusting the Ni content added to Cu. It can be easily formed. Moreover, since the sulfurization detecting portions 4a facing the plurality of sulfurization detecting conductors 4 via the gap G are formed, and these sulfurization detecting portions 4a are exposed from the protective film 6 in the same surface area, a plurality of sulfurization gases can be detected. It is possible to act on the sulfidation detecting portion 4a under the same condition, and it is possible to appropriately vary the conduction timing of the gap G formed in each sulfidation detecting conductor 4.
  • the timings at which the gaps G of the sulfurization detecting conductors 4 are electrically connected instead of forming the sulfurization detecting conductors 4 with materials having different copper contents, a film made of a material having the same copper content is used. The thickness may be different for each sulfurization detection conductor 4. In that case, since the larger the thickness of the sulfurization detection conductor 4 is, the more copper sulfide is generated, the gap G between the thickness of the sulfurization detection conductor 4 is increased. Conducts at an early timing.
  • the protective film 6 is formed up to the position where the connection portion between each sulfurization detection conductor 4 and the first front electrode 2 is covered. Since the electrode 2 and the sulfuration detection unit 4a are separated, it is possible to prevent the sulfuration detection unit 4a from being covered with solder when the sulfurization detection resistor 10 is mounted on the circuit board by soldering. Further, when the front electrodes 2 and 3 are formed by using Ag or the like, it is possible to prevent unexpected conduction of the sulfurization detecting portion 4a due to migration to the sulfurization detecting conductor 4 side.
  • FIG. 6 is a plan view of the sulfuration detection resistor 20 according to the second embodiment of the present invention, and the portions corresponding to those in FIG.
  • the gaps G of the plurality of sulfurization detection conductors 4 are made different from each other, so that the sulfurization detection portions 4a of the sulfurization detection conductors 4 are separated from each other.
  • the gaps G1, G2, G3 are set to G1 ⁇ G2 ⁇ G3.
  • the sulfurization detection resistor 20 when the sulfurization detection resistor 20 is arranged in an atmosphere containing a sulfurization gas, first, the sulfurization detection conductor 4 on the upper stage side in which the gap G1 is the smallest is conductive. Then, the middle sulfide detection conductor 4 having the narrow gap G2 is brought into conduction, and finally the lower sulfide detection conductor 4 having the wide gap G3 is brought into conduction. Therefore, similarly to the above-described first embodiment, the resistance value change between the pair of front electrodes 2 and 3 gradually changes, and the degree of sulfidation can be accurately and easily detected.
  • the gaps G1, G2, G3 formed in the sulfurization detection conductors 4 are made different so that each sulfurization detection is performed with an increase in the cumulative sulfurization amount. Since the conductors 4 become conductive at different timings, it is possible to form the sulfurization detection conductors 4 in the same step using a material having the same composition (for example, Cu100%). Further, at this time, each of the sulfurization detection conductors 4 may be formed of the material having the same composition as the first front electrode 2 and the second front electrode 3 in the same process, or the material having the same composition (for example, Ni of 30%). It is also possible to form each sulfide detection conductor 4 by using the contained Cu) in the same step as the resistor 5.
  • each of the sulfurization detection conductors 4 is formed with a material having a different copper content, and in that case, the sulfurization detection conductors 4 with the narrowest gap interval are set. It is preferable to use a material having the highest copper content.
  • FIG. 7 is a plan view of a sulfurization detection resistor 30 according to the third embodiment of the present invention
  • FIG. 8 is a plan view of a sulfurization detection resistor 40 according to the fourth embodiment of the present invention, which corresponds to FIG.
  • the duplicated description will be omitted by giving the same reference numerals to the portions to be performed.
  • the protection film 6 has a band-shaped protection film 6a located between the sulfurization detection portions 4a of the respective sulfurization detection conductors 4,
  • the other configurations are basically the same as those of the sulfuration detection resistor 20 according to the second embodiment.
  • the sulfurization detection portion 4a of each sulfurization detection conductor 4 arranged in parallel between the first front electrode 2 and the second front electrode 3 Even if the distance between the adjacent ones becomes narrower, an unexpected short circuit between the adjacent sulfurization detection portions 4a can be suppressed by the strip-shaped protective film 6a.
  • the width dimension of the band-shaped protective film 6a may be narrower than the interval between the adjacent sulfurization detection portions 4a, but like the sulfurization detection resistor 40 according to the fourth embodiment shown in FIG. If the width dimension of the sulfide is formed wider than the interval between the adjacent sulfurization detecting portions 4a and the band-shaped protective film 6a covers the widthwise edge side of the sulfurization detecting portions 4a, unexpected short circuit can be suppressed more effectively. be able to.
  • the sulfurization detection portions 4a having different gaps G are formed in each sulfurization detection conductor 4, and the band-shaped protective film is provided between the sulfurization detection portions 4a.
  • the band-shaped protective film 6a is applied to the sulfuration detection resistor 10 according to the first embodiment, and the sulfuration detection section 4a having the same gap G is set.
  • the band-shaped protective film 6a may be formed.
  • FIG. 9 is a plan view of a sulfurization detection resistor 50 according to the fifth embodiment of the present invention, and the portions corresponding to those in FIG.
  • the sulfuration detection resistor 50 includes a plurality of sets of sulfurization detection conductors 4 and resistors 5 connected in parallel between the first front electrode 2 and the second front electrode 3.
  • the sulfurization detecting portion 4a exposed from the protective film 6 is formed only in the upper and middle sulfurization detecting conductors 4 in the figure, and the lower sulfurization detecting conductor 4 covered with the protective film 6 is exposed to the outside. It does not have a sulfurization detector.
  • a gap G1 is formed in the upper sulfide detection section 4a, and a gap G2 having a wider gap than the gap G1 is formed in the middle sulfide detection section 4a. No gap is formed in the sulfuration detecting conductor 4.
  • the lower sulfurization detection conductor 4 and the resistor 5 connected to the lower sulfurization detection conductor constitute a circuit for ensuring continuity, and other configurations are basically the same as those of the sulfurization detection resistor 10 according to the first embodiment. Is.
  • FIG. 10 is an explanatory diagram showing the relationship between the cumulative sulfurization amount and the resistance value when the sulfurization detection resistor 50 according to the fifth embodiment is arranged in a sulfurization gas atmosphere.
  • the sulfuration detection conductor 4 of the circuit for ensuring continuity covered by the protective film 6 and the resistor 5 connected to the conductor 4 are connected via the resistor 5. Since the two front electrodes 2 and 3 are electrically connected to each other, assuming that the resistance value of each resistor 5 is, for example, R, the resistance value R of one resistor 5 is detected as the initial resistance value of the sulfuration detection resistor 50. To be done.
  • the sulfurization detecting conductor 4 on the upper stage side in which the gap G1 having a narrow interval is formed is brought into conduction, and at this time, the upper stage side.
  • the resistance value R/2 for two resistors 5 connected in parallel to the resistor 5 connected to the sulfurization detection conductor 4 and the resistor 5 connected to the sulfurization detection conductor 4 in the conduction ensuring circuit portion is detected.
  • the middle-side sulfurization detection conductor 4 in which the wide gap G2 is formed becomes conductive, and at this time, the resistor connected to the upper/middle-side sulfurization detection conductor 4 is connected.
  • the resistance value R/3 for three resistors 5 connected in parallel with the resistor 5 connected to the sulfurization detection conductor 4 of the circuit for ensuring continuity is detected. Therefore, similarly to the above-described first to fourth embodiments, the resistance value change between the pair of front electrodes 2 and 3 gradually changes, and the degree of sulfidation can be accurately and easily detected. ..
  • the resistance value of the resistor 5 in the conduction ensuring circuit portion is lower than the resistance values of the other resistors 5 connected to the respective sulfurization detection conductors 4 exposed from the protective film 6. If the value is set low, a large amount of current will flow through the conduction ensuring circuit section having the resistor 5 having a low resistance value when the sulfurization detection conductor 4 becomes conductive as the cumulative amount of sulfurization increases, so that a crystal of copper sulfide is formed. When a slight contact occurs between the sulfurization detecting portions 4a of the sulfurization detecting conductor 4, the load is reduced, and unnecessary overload disconnection or the like can be prevented.
  • the sulfurization detection conductor 4 of the conduction ensuring circuit portion does not participate in the detection of the sulfurization gas, and therefore extends from the first front electrode 2 toward the second front electrode 3. It is also possible to integrally form the protruding portion and use this protruding portion as the sulfuration detecting conductor 4 of the circuit for ensuring conduction. Further, the gaps G formed in the plurality of sulfurization detecting conductors 4 exposed from the protective film 6 may have the same intervals. In that case, each sulfurization detecting conductor 4 is formed of a material having a different copper content. Alternatively, the film thickness of a material having the same copper content may be different for each sulfurization detection conductor 4.
  • FIG. 11 is a plan view of a sulfurization detection resistor 60 according to a sixth embodiment of the present invention, and the portions corresponding to those in FIG.
  • the sulfuration detection resistor 60 has three sulfurization detection conductors 4 connected to the first front electrode 2 and three sulfurization detection conductors 4 connected to the second front electrode 3.
  • the measurement conductors 11 are connected in parallel, the resistors 5 are connected in series between the corresponding sulfurization detection conductors 4 and the measurement conductors 11, and the resistance values are trimmed in the trimming grooves 5a. Is formed, and the other structure is basically the same as the sulfuration detection resistor 20 according to the second embodiment.
  • one sulfurization detection portion 4a of the sulfurization detection conductor 4 and the measurement conductor 11 are provided at both ends of each resistor 5 arranged in parallel. Therefore, when trimming the resistance values of the resistors 5 of each set, while abutting the probes on the sulfurization detection portions 4a and the measurement conductors 11 connected to both ends of each resistor 5, Trimming can be done.
  • the measurement conductors 11 are connected not only to one end of the resistor 5 but also to both ends thereof, and the measurement conductors 11 are connected to the second surface electrode 3 and the sulfurization detection.
  • the conductor 4 may be connected to one of the sulfurization detection portions 4a.
  • the gap G existing between the sulfurization detecting portions 4a of the sulfurization detecting conductors 4 has a shape that extends linearly along the lateral direction of the insulating substrate 1.
  • a meandering shape such as a dogleg shape, a crank shape, a sawtooth shape, a corrugated shape, or a spiral shape can be formed, a gap G having a long overall length can be interposed between the pair of sulfurization detection portions 4a, and therefore, a range for detecting conduction Is longer and the detection accuracy is improved.
  • Sulfidation detection resistor 1 Insulating substrate 2 First table electrode 3 Second table electrode 4, 4A, 4B, 4C Sulfidation detection conductor 4a Sulfidation detection part 5 Resistor 6 Protective film 6a Band Protective film 7 Back electrode 8 End surface electrode 9 External electrode 10A Large-sized substrate 10B Strip substrate 10c Chip substrate 11 Conductor for measurement G, G1, G2, G3 Gap

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Abstract

Provided is a sulfurization detection resistor capable of accurately and simply detecting a degree of sulfurization. A sulfurization detection resistor 10 includes a rectangular parallelepiped insulating substrate 1; a first surface electrode 2 and a second surface electrode 3 formed on both end portions of a main surface of the insulating substrate 1; a plurality of sulfurization detection conductors 4 connected in parallel to the first surface electrode 2; a plurality of resistors 5 connected between each sulfurization detection conductor 4 and the second surface electrode 3; and a protective film 6 formed so as to cover a portion of the sulfurization detection conductors 4 and the entirety of the resistors 5. Each of the sulfurization detection conductors 4 includes a sulfurization detection section 4a that is not covered by the protective film 6 and that faces another sulfurization detection section across a predetermined gap G. Each of the sulfurization detection conductors 4 is formed from a material having a different copper content, and the gaps G formed between the sulfurization detection conductors 4 are configured to conduct at timings that differ in response to increases in the cumulative sulfurization amount.

Description

硫化検出抵抗器Sulfide detection resistor
　本発明は、腐食環境の累積的な硫化量を検出するための硫化検出抵抗器に関する。 The present invention relates to a sulfurization detection resistor for detecting the cumulative amount of sulfurization in a corrosive environment.
　一般的にチップ抵抗器等の電子部品の内部電極としては、比抵抗の低いＡｇ（銀）系の電極材料が使用されているが、銀は硫化ガスに晒されると硫化銀となり、硫化銀は絶縁物であることから、電子部品が断線してしまうという不具合が発生してしまう。そこで近年では、ＡｇにＰｄ（パラジウム）やＡｕ（金）を添加して硫化しにくい電極を形成したり、電極を硫化ガスが到達しにくい構造にする等の硫化対策が講じられている。 Generally, an Ag (silver)-based electrode material having a low specific resistance is used as an internal electrode of an electronic component such as a chip resistor, but silver becomes silver sulfide when exposed to a sulfide gas, and silver sulfide becomes Since it is an insulator, there is a problem that the electronic component is disconnected. Therefore, in recent years, sulfuration countermeasures have been taken such as adding Pd (palladium) or Au (gold) to Ag to form an electrode that is less likely to be sulfurized, or making the electrode a structure in which sulfurized gas does not easily reach.
　しかし、このような硫化対策を電子部品に講じたとしても、当該電子部品が硫化ガス中に長期間晒された場合や高濃度の硫化ガスに晒された場合は、断線を完全に防ぐことが難しくなるため、未然に断線を検知して予期せぬタイミングでの故障発生を防止することが必要となる。 However, even if such measures for sulfurization are taken for electronic parts, if the electronic parts are exposed to sulfurized gas for a long period of time or exposed to high concentration sulfurized gas, it is possible to completely prevent disconnection. Since it becomes difficult, it is necessary to detect disconnection in advance and prevent the occurrence of a failure at an unexpected timing.
　そこで従来より、特許文献１に記載されているように、電子部品の累積的な硫化の度合いを検出して、電子部品が硫化断線する等して故障する前に危険性を検出可能とした硫化検出センサが提案されている。 Therefore, conventionally, as described in Patent Document 1, it is possible to detect the cumulative degree of sulfidation of an electronic component and detect the risk before the electronic component fails due to a sulfidation disconnection or the like. Detection sensors have been proposed.
　特許文献１に記載された硫化検出センサは、絶縁基板上にＡｇを主体とした硫化検出体を形成し、この硫化検出体を覆うように透明で硫化ガス透過性のある保護膜を形成すると共に、絶縁基板の両側端部に硫化検出体に接続する端面電極を形成した構成となっている。このように構成された硫化検出センサを他の電子部品と共に回路基板上に実装した後、該回路基板を硫化ガスを含む雰囲気で使用すると、時間経過に伴って他の電子部品が硫化されると共に、硫化ガスが硫化検出センサの保護膜を透過して硫化検出体に接するため、硫化ガスの濃度と経過時間に応じて硫化検出体の色が変化していく。これにより、硫化検出体の色の変化を保護膜を透して目視したり、硫化検出センサの上面に照射した光の硫化検出体からの反射光を検出したり、あるいは硫化検出体の抵抗値の変化を検出することにより、硫化の度合いを検出するようにしている。 In the sulfurization detection sensor described in Patent Document 1, a sulfurization detection body mainly composed of Ag is formed on an insulating substrate, and a transparent protective film having sulfur gas permeability is formed so as to cover the sulfurization detection body. The end surface electrodes connected to the sulfuration detector are formed on both ends of the insulating substrate. After the sulfuration detection sensor configured as described above is mounted on a circuit board together with other electronic components, when the circuit board is used in an atmosphere containing a sulfurization gas, other electronic components are sulfurized with the passage of time. Since the sulfide gas permeates the protective film of the sulfide detection sensor and contacts the sulfide detector, the color of the sulfide detector changes according to the concentration of the sulfide gas and the elapsed time. This allows the color change of the sulfuration detector to be viewed through the protective film, the reflected light from the sulfurization detector of the light irradiated on the upper surface of the sulfurization detector to be detected, or the resistance value of the sulfuration detector to be detected. The degree of sulfurization is detected by detecting the change in.
特開２００９－２５０６１１号公報JP, 2009-250611, A
　しかし、硫化ガスによる硫化検出体の色の変化は微妙であるため、作業員の目視によって硫化の度合いを正確に検出することは困難であり、硫化検出体からの反射光に基づいて硫化の度合いを検出するとしても、検出するための大掛かりな設備が別途必要になるという課題がある。また、硫化検出体は比抵抗の低いＡｇを主体とした導電体であるため、累積的な硫化量に伴う硫化検出体の抵抗値変化は微量であり、さらにＡｇは温度特性（ＴＣＲ）が非常に悪く、温度による抵抗値変化が大きいため、硫化検出体の抵抗値の変化に基づいて硫化の度合いを正確に検出することも困難となる。 However, it is difficult to accurately detect the degree of sulfidation by the operator's eyes because the change in the color of the sulfurization detector due to the sulfurization gas is subtle. However, there is a problem in that a large-scale facility for detecting is additionally required. Further, since the sulfurization detector is a conductor mainly composed of Ag having a low specific resistance, the change in the resistance value of the sulfurization detector due to the cumulative amount of sulfurization is very small, and Ag has an extremely high temperature characteristic (TCR). Since the resistance value changes greatly with temperature, it is difficult to accurately detect the degree of sulfurization based on the change in the resistance value of the sulfuration detector.
　本発明は、このような従来技術の実情に鑑みてなされたもので、その目的は、硫化の度合いを正確かつ容易に検出することができる硫化検出抵抗器を提供することにある。 The present invention has been made in view of the actual situation of the prior art as described above, and an object thereof is to provide a sulfidation detection resistor capable of accurately and easily detecting the degree of sulfidation.
　上記の目的を達成するために、本発明の硫化検出抵抗器は、直方体形状の絶縁基板と、前記絶縁基板の主面における両端部に形成された一対の表電極と、一方の前記表電極に並列に接続された銅を主成分とする複数の硫化検出導体と、他方の前記表電極と前記硫化検出導体との間に接続された複数の抵抗体と、前記抵抗体の全体および前記硫化検出導体の一部を覆うように形成された保護膜と、を備え、前記硫化検出導体は前記保護膜に覆われずに所定のギャップを隔てて対向する硫化検出部を有しており、複数の前記硫化検出導体に形成された前記ギャップが、前記硫化検出部の累積的な硫化に伴って異なるタイミングで導通することを特徴としている。 In order to achieve the above object, the sulfuration detection resistor of the present invention is a rectangular parallelepiped insulating substrate, a pair of front electrodes formed at both ends of the main surface of the insulating substrate, and one of the front electrodes. A plurality of sulfurization detection conductors containing copper as a main component connected in parallel, a plurality of resistors connected between the other front electrode and the sulfurization detection conductor, the entire resistor and the sulfurization detection A protective film formed so as to cover a part of the conductor, wherein the sulfurization detection conductor has a sulfurization detection portion facing each other with a predetermined gap, without being covered by the protection film. It is characterized in that the gap formed in the sulfurization detecting conductor is conducted at different timings due to cumulative sulfurization of the sulfurization detecting portion.
　このように構成された硫化検出抵抗器では、直列に連続する硫化検出導体と抵抗体の組が一対の表電極間に複数組並列に接続されていると共に、各組の硫化検出導体が所定のギャップを隔てて対向する硫化検出部を有しており、硫化ガスに晒されることで生成する硫化銅の結晶が伸長してギャップ間に跨ることにより、各組の硫化検出導体が異なるタイミングで導通状態となるため、一対の表電極間の抵抗値変化が段階的に変化していき、硫化の度合いを正確かつ容易に検出することができる。 In the sulfurization detection resistor configured in this way, a plurality of series of sulfurization detection conductors and resistors connected in series are connected in parallel between a pair of front electrodes, and each pair of sulfurization detection conductors has a predetermined structure. It has a sulfur detection part facing each other across a gap, and the copper sulfide crystals generated by exposure to the sulfur gas expand and straddle the gap so that the sulfur detection conductors of each set conduct at different times. As a result, the resistance value change between the pair of front electrodes gradually changes, and the degree of sulfidation can be accurately and easily detected.
　上記構成の硫化検出抵抗器において、複数の硫化検出導体が銅の含有量を異にする材料で形成されていると、各硫化検出導体が有するギャップの間隔を同じにしても、各組の硫化検出導体が導通するタイミングを異ならせることができる。 In the sulfuration detection resistor having the above structure, if the plurality of sulfurization detection conductors are formed of materials having different copper contents, even if the gaps of the sulfurization detection conductors have the same gap, The timing at which the detection conductors conduct can be different.
　また、上記構成の硫化検出抵抗器において、複数の硫化検出導体が間隔を異にするギャップを有していると、各硫化検出導体を同一組成の材料で形成しても、各組の硫化検出導体が導通するタイミングを異ならせることができる。 Further, in the sulfuration detection resistor having the above structure, if the plurality of sulfurization detection conductors have gaps with different intervals, even if each sulfurization detection conductor is made of a material having the same composition, each pair of sulfurization detection conductors is detected. The timing at which the conductors conduct can be different.
　また、上記構成の硫化検出抵抗器において、保護膜が複数の硫化検出導体と一方の表電極との接続部を覆うように形成されていると、保護膜によって表電極と硫化検出部が隔てられるため、硫化検出抵抗器を回路基板に半田実装する際に、硫化検出部が半田で覆われてしまうことを防止できる。また、表電極をＡｇ等を用いて形成した場合に、硫化検出導体側へのマイグレーションによって硫化検出部の予期せぬ導通を防止することができる。 Further, in the sulfuration detection resistor having the above structure, when the protective film is formed so as to cover the connection between the plurality of sulfurization detection conductors and one of the front electrodes, the front electrode and the sulfurization detection unit are separated by the protective film. Therefore, it is possible to prevent the sulfuration detection portion from being covered with the solder when the sulfuration detection resistor is mounted on the circuit board by soldering. Further, when the front electrode is made of Ag or the like, it is possible to prevent unexpected conduction of the sulfurization detecting portion due to migration to the sulfurization detecting conductor side.
　また、上記構成の硫化検出抵抗器において、並列配置された複数の硫化検出部の間に帯状保護膜が形成されていると、硫化検出部の隣接間距離が狭くなった場合でも、隣接する硫化検出部間の予期せぬ短絡を帯状保護膜によって抑制することができる。この場合において、帯状保護膜は硫化検出部の幅方向エッジ側を覆っていることが好ましい。 Further, in the sulfuration detection resistor having the above structure, if the strip-shaped protective film is formed between the plurality of sulfurization detection portions arranged in parallel, even if the distance between the adjacent sulfurization detection portions becomes small, the adjacent sulfurization detection portions An unexpected short circuit between the detection parts can be suppressed by the strip-shaped protective film. In this case, it is preferable that the belt-shaped protective film covers the widthwise edge side of the sulfuration detection portion.
　また、上記構成の硫化検出抵抗器において、一対の表電極間に導通確保回路部が硫化検出導体と並列に配置されており、この導通確保回路部が直列に接続された抵抗体と導体とからなると共に、これら抵抗体と導体の全体が保護膜で覆われていると、複数の硫化検出部が導通する前の初期状態において、導通確保回路部によって両表電極間の導通を確保することができる。 Further, in the sulfuration detection resistor having the above structure, the conduction ensuring circuit section is arranged in parallel with the sulfuration detecting conductor between the pair of front electrodes, and the conduction ensuring circuit section is composed of a resistor and a conductor connected in series. In addition, if these resistors and conductors are entirely covered with a protective film, the conduction ensuring circuit section can secure conduction between both surface electrodes in the initial state before the plural sulfurization detection sections are conducted. it can.
　この場合において、導通確保回路部の抵抗体の抵抗値が、硫化検出導体に接続する他の抵抗体の抵抗値よりも低く設定されていると、硫化検出導体が導通状態になったときに、抵抗値の低い抵抗体を有する導通確保回路部に多くの電流が流れるため、硫化銅の結晶が硫化検出導体の硫化検出部間に僅かに接触した場合に負荷が少なくなり、不要な過負荷断線等を防止することができる。 In this case, if the resistance value of the resistance element of the conduction ensuring circuit is set lower than the resistance values of the other resistance elements connected to the sulfurization detection conductor, when the sulfurization detection conductor becomes conductive, Since a large amount of current flows in the circuit for ensuring continuity that has a resistor with a low resistance value, the load will be reduced if the copper sulfide crystal slightly contacts between the sulfurization detection parts of the sulfurization detection conductor, and unnecessary overload disconnection will occur. Etc. can be prevented.
　また、上記構成の硫化検出抵抗器において、一対の表電極間に連続して形成された抵抗体および硫化検出導体のうち、抵抗体にトリミング溝が形成されていると共に、該抵抗体の両端部に硫化検出導体と測定用導体が接続されていると、各組の抵抗体の抵抗値をトリミングする際に、個々の抵抗体の両端部に接続された硫化検出導体と測定用導体にプローブを当接させながらトリミングを行うことができる。 Further, in the sulfuration detecting resistor having the above-mentioned configuration, among the resistor and the sulfurization detecting conductor which are continuously formed between the pair of front electrodes, a trimming groove is formed in the resistor and both end portions of the resistor are formed. If the sulfurization detection conductor and the measurement conductor are connected to, when trimming the resistance values of the resistors in each set, attach a probe to the sulfurization detection conductor and the measurement conductor connected to both ends of each resistor. Trimming can be performed while abutting.
　また、上記構成の硫化検出抵抗器において、硫化検出導体の硫化検出部間に存するギャップが蛇行形状であると、硫化検出導体の限られた幅寸法内に全長の長いギャップを介在させることができるため、導通を検出する範囲が長くなって検出精度を高めることができる。 Further, in the sulfuration detection resistor having the above-mentioned configuration, if the gap existing between the sulfurization detection portions of the sulfurization detection conductor has a meandering shape, it is possible to interpose a long-length gap within the limited width dimension of the sulfurization detection conductor. Therefore, the range for detecting the continuity becomes longer, and the detection accuracy can be improved.
　本発明によれば、硫化の度合いを正確かつ容易に検出することが可能な硫化検出抵抗器を提供することができる。 According to the present invention, it is possible to provide a sulfurization detection resistor capable of accurately and easily detecting the degree of sulfurization.
本発明の第１実施形態例に係る硫化検出抵抗器の平面図である。It is a top view of the sulfuration detection resistor concerning the example of a 1st embodiment of the present invention. 図１のII－II線に沿う断面図である。FIG. 2 is a sectional view taken along the line II-II in FIG. 1. 該硫化検出抵抗器の製造工程を示す平面図である。It is a top view which shows the manufacturing process of this sulfurization detection resistor. 該硫化検出抵抗器の製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of this sulfurization detection resistor. 該硫化検出抵抗器における累積硫化量と抵抗値の関係を示す説明図である。It is explanatory drawing which shows the relationship between the cumulative sulfurization amount and resistance value in this sulfurization detection resistor. 本発明の第２実施形態例に係る硫化検出抵抗器の平面図である。It is a top view of a sulfurization detection resistor concerning the example of a 2nd embodiment of the present invention. 本発明の第３実施形態例に係る硫化検出抵抗器の平面図である。It is a top view of a sulfurization detection resistor concerning the example of a 3rd embodiment of the present invention. 本発明の第４実施形態例に係る硫化検出抵抗器の平面図である。It is a top view of the sulfuration detection resistor concerning the example of a 4th embodiment of the present invention. 本発明の第５実施形態例に係る硫化検出抵抗器の平面図である。It is a top view of a sulfurization detection resistor concerning a 5th embodiment of the present invention. 該硫化検出抵抗器における累積硫化量と抵抗値の関係を示す説明図である。It is explanatory drawing which shows the relationship between the cumulative sulfurization amount and resistance value in this sulfurization detection resistor. 本発明の第６実施形態例に係る硫化検出抵抗器の平面図である。It is a top view of a sulfurization detection resistor concerning a 6th embodiment example of the present invention.
　以下、発明の実施の形態について図面を参照しながら説明すると、図１は本発明の第１実施形態例に係る硫化検出抵抗器の平面図、図２は図１のII－II線に沿う断面図である。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of a sulfuration detection resistor according to a first embodiment of the present invention, and FIG. 2 is a cross section taken along line II-II of FIG. It is a figure.
　図１と図２に示すように、第１実施形態例に係る硫化検出抵抗器１０は、直方体形状の絶縁基板１と、絶縁基板１の表面の長手方向両端部に設けられた第１表電極２および第２表電極３と、第１表電極２に並列に接続された複数（本実施形態では３つ）の硫化検出導体４と、各硫化検出導体４と第２表電極３との間に接続された複数の抵抗体５と、各硫化検出導体４の一部と各抵抗体５の全体を覆う保護膜６と、絶縁基板１の裏面の長手方向両端部に設けられ一対の裏電極７と、絶縁基板１の長手方向両端面に設けられた一対の端面電極８と、端面電極８の表面に設けられた外部電極９と、によって主として構成されている。 As shown in FIGS. 1 and 2, the sulfurization detection resistor 10 according to the first embodiment includes a rectangular parallelepiped insulating substrate 1 and a first front electrode provided on both ends of the surface of the insulating substrate 1 in the longitudinal direction. 2 and the second front electrode 3, a plurality of (three in the present embodiment) sulfurization detection conductors 4 connected in parallel to the first front electrode 2, and between each sulfurization detection conductor 4 and the second front electrode 3. A plurality of resistors 5 connected to each other, a protection film 6 covering a part of each sulfur detection conductor 4 and each resistor 5, and a pair of back electrodes provided on both ends of the back surface of the insulating substrate 1 in the longitudinal direction. 7, a pair of end face electrodes 8 provided on both end faces of the insulating substrate 1 in the longitudinal direction, and an external electrode 9 provided on the surface of the end face electrode 8.
　絶縁基板１は、後述する大判基板を縦横の分割溝に沿って分割して多数個取りされたものであり、大判基板の主成分はアルミナを主成分とするセラミックス基板である。 The insulating substrate 1 is a large-sized substrate, which will be described later, divided along vertical and horizontal dividing grooves to obtain a large number, and the large-sized substrate is mainly made of alumina and is a ceramics substrate.
　第１表電極２と第２表電極３は銅を主成分とするＣｕ系ペーストをスクリーン印刷して乾燥・焼成したものであり、これら第１表電極２と第２表電極３は所定間隔を存して対向するように絶縁基板１の長手方向両端部に形成されている。一対の裏電極７も銅を主成分とするＣｕ系ペーストをスクリーン印刷して乾燥・焼成したものであり、これら裏電極７は絶縁基板１の表面側の第１表電極２および第２表電極３と対応する位置に形成されている。 The first front electrode 2 and the second front electrode 3 are formed by screen-printing a Cu-based paste containing copper as a main component, followed by drying and firing, and the first front electrode 2 and the second front electrode 3 are arranged at predetermined intervals. The insulating substrate 1 is formed at both ends in the longitudinal direction so as to be opposed to each other. The pair of back electrodes 7 are also made by screen-printing a Cu-based paste containing copper as a main component, and drying and firing the back electrodes 7. These back electrodes 7 are the first front electrode 2 and the second front electrode on the front surface side of the insulating substrate 1. It is formed at a position corresponding to 3.
　第１表電極２に並列に接続された３つの硫化検出導体４は、銅を主成分とするＣｕ系ペーストをスクリーン印刷して乾燥・焼成したものであるが、Ｃｕペーストに添加されたＮｉ（ニッケル）の含有量が相違している。具体的には、図１の上段に位置する硫化検出導体４はＮｉを全く含まないＣｕペーストからなり、図１の中段に位置する硫化検出導体４はＮｉを５％含むＣｕ－Ｎｉペーストからなり、図１の下段に位置する硫化検出導体４はＮｉを１０％含むＣｕ－Ｎｉペーストからなる。硫化検出導体４の中央部には幅方向に沿って延びるスリット状のギャップＧが形成されており、このギャップＧの間隔は各硫化検出導体４で全て同じ寸法に設定されている。 The three sulfurization detection conductors 4 connected in parallel to the first front electrode 2 were screen-printed with a Cu-based paste containing copper as a main component, dried and fired. The content of nickel) is different. Specifically, the sulfurization detection conductor 4 located in the upper part of FIG. 1 is made of Cu paste containing no Ni, and the sulfurization detection conductor 4 located in the middle part of FIG. 1 is made of Cu—Ni paste containing 5% of Ni. The sulfurization detection conductor 4 located in the lower part of FIG. 1 is made of Cu—Ni paste containing 10% Ni. A slit-shaped gap G extending along the width direction is formed in the central portion of the sulfurization detecting conductor 4, and the gap G is set to the same size in each sulfurization detecting conductor 4.
　複数の抵抗体５はＣｕ－Ｎｉ等の抵抗体ペーストをスクリーン印刷して乾燥・焼成させたものである。抵抗体５の両端部は硫化検出導体４と第２表電極３に接続されており、１組の硫化検出導体４と抵抗体５の直列回路部が第１表電極２と第２表電極３との間に３組並列に接続されている。 The plurality of resistors 5 are made by screen-printing a resistor paste such as Cu-Ni and drying and firing. Both ends of the resistor 5 are connected to the sulfurization detection conductor 4 and the second front electrode 3, and a series circuit portion of the pair of sulfurization detection conductor 4 and the resistor 5 is connected to the first front electrode 2 and the second front electrode 3. And 3 sets are connected in parallel.
　保護膜６はアンダーコート層とオーバーコート層の２層構造からなり、そのうちアンダーコート層はガラスペーストをスクリーン印刷して乾燥・焼成させたものであり、オーバーコート層はエポキシ系樹脂ペーストをスクリーン印刷して加熱硬化させたものである。この保護膜６は各硫化検出導体４の中央部分を除く部位と各抵抗体５の全体を覆うように形成されており、保護膜６から外部に露出する各硫化検出導体４の中央部分は、ギャップＧを隔てて対向する一対の硫化検出部４ａとなっている。なお、硫化検出部４ａを挟んで２つに分離した保護膜６のうち、一方（図示左側）の保護膜６は第１表電極２と各硫化検出導体４との接続部を覆う位置まで延びており、他方（図示右側）の保護膜６は第２表電極３と各抵抗体５との接続部を覆う位置まで延びている。 The protective film 6 has a two-layer structure of an undercoat layer and an overcoat layer, of which the undercoat layer is a screen-printed glass paste which is dried and baked, and the overcoat layer is a screen-printed epoxy resin paste. Then, it is cured by heating. The protective film 6 is formed so as to cover the entire portion of each resistor 5 and the portion excluding the central portion of each sulfurization detecting conductor 4, and the central portion of each sulfurating detection conductor 4 exposed from the protective film 6 to the outside is The pair of sulfurization detection portions 4a are opposed to each other with a gap G therebetween. It should be noted that, of the protective films 6 separated into two with the sulfurization detecting portion 4a sandwiched therebetween, one (left side in the drawing) protective film 6 extends to a position covering the connection portion between the first front electrode 2 and each sulfurization detecting conductor 4. The other protective film 6 (on the right side in the drawing) extends to a position that covers the connection between the second front electrode 3 and each resistor 5.
　一対の端面電極８は、絶縁基板１の端面にＮｉ／Ｃｒをスパッタリングしたり、Ａｇ系ペーストを塗布して加熱硬化させたものであり、これら端面電極８は対応する第１表電極２と裏電極７間、および第２表電極３と裏電極７間をそれぞれ導通するように形成されている。 The pair of end face electrodes 8 are formed by sputtering Ni/Cr on the end faces of the insulating substrate 1 or by applying an Ag-based paste and heating and curing the end faces electrodes 8 and the corresponding first front electrode 2 and back face. The electrodes 7 and the second front electrode 3 and the back electrode 7 are electrically connected to each other.
　一対の外部電極９はバリヤー層と外部接続層の２層構造からなり、そのうちバリヤー層は電解メッキによって形成されたＮｉメッキ層であり、外部接続層は電解メッキによって形成されたＳｎメッキ層である。これら外部電極９により、保護膜６から露出する第１表電極２と第２表電極３の表面と、裏電極７および端面電極８の表面がそれぞれ被覆されている。 The pair of external electrodes 9 has a two-layer structure of a barrier layer and an external connection layer, of which the barrier layer is a Ni plating layer formed by electrolytic plating, and the external connection layer is a Sn plating layer formed by electrolytic plating. .. The surfaces of the first front electrode 2 and the second front electrode 3 exposed from the protective film 6 and the surfaces of the back electrode 7 and the end face electrode 8 are covered with these external electrodes 9, respectively.
　次に、この硫化検出抵抗器１０の製造工程について、図３と図４を用いて説明する。なお、図３（ａ）～（ｆ）はこの製造工程で用いられる大判基板を表面的に見た平面図、図４（ａ）～（ｆ）は図３（ａ）～（ｆ）のＡ－Ａ線に沿う１チップ相当分の断面図をそれぞれ示している。 Next, the manufacturing process of the sulfurization detection resistor 10 will be described with reference to FIGS. 3 and 4. 3A to 3F are plan views of a large-sized substrate used in this manufacturing process as seen from the surface, and FIGS. 4A to 4F are A of FIGS. 3A to 3F. Each of the cross-sectional views corresponding to one chip along the line -A is shown.
　まず、絶縁基板１が多数個取りされる大判基板を準備する。この大判基板には予め１次分割溝と２次分割溝が格子状に設けられており、両分割溝によって区切られたマス目の１つ１つが１個分のチップ領域となる。図３には１個分のチップ領域に相当する大判基板１０Ａが代表して示されているが、実際は多数個分のチップ領域に相当する大判基板に対して以下に説明する各工程が一括して行われる。 First, prepare a large-sized board from which a large number of insulating boards 1 can be taken. The large-sized substrate is preliminarily provided with primary dividing grooves and secondary dividing grooves in a grid pattern, and each of the cells divided by the dividing grooves serves as a chip region for one piece. In FIG. 3, a large-sized substrate 10A corresponding to one chip area is shown as a representative, but in reality, each large-sized substrate corresponding to a large number of chip areas is subjected to the steps described below collectively. Is done.
　すなわち、図３（ａ）と図４（ａ）に示すように、この大判基板１０Ａの表面にＣｕ系ペーストをスクリーン印刷した後、これを乾燥・焼成して一対の第１表電極２と第２表電極３を形成する。なお、これと同時あるいは前後して、大判基板１０Ａの裏面にＣｕ系ペーストをスクリーン印刷した後、これを乾燥・焼成することにより、第１表電極２および第２表電極３に対応する一対の裏電極７を形成する。 That is, as shown in FIGS. 3(a) and 4(a), after the Cu-based paste is screen-printed on the surface of the large-sized substrate 10A, it is dried and fired to form a pair of the first front electrode 2 and the first front electrode 2. 2 The front electrode 3 is formed. Simultaneously with or before and after this, after the Cu-based paste is screen-printed on the back surface of the large-sized substrate 10A, the paste is dried and fired to obtain a pair of first front electrode 2 and second front electrode 3. The back electrode 7 is formed.
　次に、図３（ｂ）と図４（ｂ）に示すように、大判基板１０Ａの表面に銅を主成分とするＣｕ系ペーストをスクリーン印刷して乾燥・焼成することにより、ギャップＧを有して第１表電極２に接続する３つの硫化検出導体４を形成する。これら３つの硫化検出導体４はＣｕに含有されるＮｉの含有量を相違しており、便宜上、図中の各硫化検出導体４に上から順に符号４Ａ，４Ｂ，４Ｃを付すと、硫化検出導体４ＡはＮｉを全く含まないＣｕからなり、硫化検出導体４ＢはＮｉを５％含むＣｕ－Ｎｉからなり、硫化検出導体４ＣはＮｉを１０％含むＣｕ－Ｎｉからなる。そして、まず、Ｎｉを含まないＣｕペーストをスクリーン印刷して乾燥した後、Ｎｉを５％含むＣｕ－Ｎｉペーストをスクリーン印刷して乾燥し、最後にＮｉを１０％含むＣｕ－Ｎｉペーストをスクリーン印刷して乾燥・焼成することにより、第１表電極２に並列に接続された３つの硫化検出導体４Ａ，４Ｂ，４Ｃを形成する。なお、各硫化検出導体４Ａ，４Ｂ，４ＣのギャップＧの間隔は全て同じ寸法に設定されている。 Next, as shown in FIGS. 3(b) and 4(b), a Cu-based paste containing copper as a main component is screen-printed on the surface of the large-sized substrate 10A and dried and baked to form a gap G. Then, the three sulfurization detection conductors 4 connected to the first front electrode 2 are formed. These three sulfurization detection conductors 4 are different in the content of Ni contained in Cu. For convenience, the reference symbols 4A, 4B, and 4C are added to the respective sulfurization detection conductors 4 in the drawing in order from the top. 4A is made of Cu containing no Ni at all, the sulfurized detection conductor 4B is made of Cu-Ni containing 5% of Ni, and the sulfurized detection conductor 4C is made of Cu-Ni containing 10% of Ni. Then, first, a Cu paste containing no Ni is screen-printed and dried, then a Cu-Ni paste containing 5% Ni is screen-printed and dried, and finally a Cu-Ni paste containing 10% Ni is screen-printed. Then, by drying and firing, three sulfurization detection conductors 4A, 4B, 4C connected in parallel to the first front electrode 2 are formed. The intervals of the gaps G of the sulfurization detecting conductors 4A, 4B, 4C are all set to the same size.
　次に、Ｃｕ－Ｎｉ等の抵抗体ペーストをスクリーン印刷して乾燥・焼成することにより、図３（ｃ）と図４（ｃ）に示すように、両端部が硫化検出導体４（４Ａ，４Ｂ，４Ｃ）と第２表電極３に接続する３つの抵抗体５を形成する。 Next, a resistor paste such as Cu-Ni is screen-printed, dried and fired, so that both ends are sulfurized detection conductors 4 (4A, 4B) as shown in FIGS. 3(c) and 4(c). , 4C) and three resistor bodies 5 connected to the second front electrode 3 are formed.
　次に、各抵抗体５を覆う領域にガラスペーストをスクリーン印刷した後、このガラスペーストを乾燥・焼成してアンダーコート層を形成し、必要に応じてアンダーコート層の上から抵抗体５に図示せぬトリミング溝を形成して抵抗値調整する。しかる後、アンダーコート層の上からエポキシ系樹脂ペーストをスクリーン印刷して加熱硬化させることにより、図３（ｄ）と図４（ｄ）に示すように、各硫化検出導体４Ａ，４Ｂ，４Ｃの一部と各抵抗体５の全体を覆う２層構造の保護膜６を形成する。その際、各硫化検出導体４Ａ，４Ｂ，４Ｃの中央部分が保護膜６から露出し、この露出部分がギャップＧを介して対向する硫化検出部４ａとなる。また、第１表電極２と各硫化検出導体４Ａ，４Ｂ，４Ｃの接続部が保護膜６によって覆われると共に、第２表電極３と各抵抗体５の接続部も保護膜６によって覆われる。 Next, after a glass paste is screen-printed on the region covering each resistor 5, the glass paste is dried and fired to form an undercoat layer. A trimming groove (not shown) is formed to adjust the resistance value. Then, an epoxy resin paste is screen-printed on the undercoat layer and heat-cured to remove each of the sulfurization detection conductors 4A, 4B, and 4C as shown in FIGS. 3(d) and 4(d). A protective film 6 having a two-layer structure is formed so as to cover a part and the whole of each resistor 5. At that time, the central portion of each of the sulfurization detecting conductors 4A, 4B, and 4C is exposed from the protective film 6, and this exposed portion becomes the sulfurization detecting portion 4a facing each other through the gap G. Further, the connection portion between the first front electrode 2 and each of the sulfurization detection conductors 4A, 4B, 4C is covered with the protective film 6, and the connection portion between the second front electrode 3 and each resistor 5 is also covered with the protective film 6.
　次に、可溶性材料等からなる図示せぬマスキングで各硫化検出導体４Ａ，４Ｂ，４Ｃの硫化検出部４ａを覆い、この状態で大判基板１０Ａを一次分割溝に沿って短冊状基板１０Ｂに１次分割した後、短冊状基板１０Ｂの分割面にＮｉ／Ｃｒをスパッタリングすることにより、図３（ｅ）と図４（ｅ）に示すように、第１表電極２と裏電極７間および第２表電極３と裏電極７間を接続する端面電極８を形成する。なお、短冊状基板１０Ｂの分割面にＮｉ／Ｃｒをスパッタリングする代わりに、Ａｇ系ペーストを塗布して加熱硬化させることにより端面電極８を形成するようにしても良い。 Next, the sulfuration detection portions 4a of the sulfurization detection conductors 4A, 4B, and 4C are covered with a masking (not shown) made of a soluble material or the like, and in this state, the large-sized substrate 10A is primary-coated on the strip-shaped substrate 10B along the primary dividing grooves. After the division, Ni/Cr is sputtered on the division surface of the strip-shaped substrate 10B so that the first front electrode 2 and the back electrode 7 and the second front electrode 7 and the back electrode 7 are separated from each other as shown in FIGS. 3(e) and 4(e). An end face electrode 8 connecting the front electrode 3 and the back electrode 7 is formed. Instead of sputtering Ni/Cr on the divided surface of the strip-shaped substrate 10B, the end face electrode 8 may be formed by applying an Ag-based paste and curing it by heating.
　次に、短冊状基板１０Ｂを二次分割溝に沿って複数のチップ状基板１０Ｃに２次分割し、これらチップ状基板１０Ｃに対して電解メッキを施してＮｉ－Ｓｎメッキ層を形成した後、前述したマスキングを溶剤を用いて除去する。これにより、図３（ｆ）と図４（ｆ）に示すように、第１表電極２と第２表電極３と裏電極７および端面電極８の表面に外部電極９が形成され、図１，２に示す硫化検出抵抗器１０が完成する。 Next, the strip-shaped substrate 10B is secondarily divided into a plurality of chip-shaped substrates 10C along the secondary dividing grooves, and these chip-shaped substrates 10C are subjected to electrolytic plating to form a Ni—Sn plated layer. The masking described above is removed using a solvent. As a result, as shown in FIGS. 3F and 4F, the external electrodes 9 are formed on the surfaces of the first front electrode 2, the second front electrode 3, the back electrode 7, and the end face electrode 8. , 2 is completed.
　図５は、本実施形態例に係る硫化検出抵抗器１０を硫化ガス雰囲気中に配置した場合における累積硫化量と抵抗値の関係を示す説明図である。図５に示すように、硫化検出抵抗器１０が硫化ガスに晒される前の初期状態において、第１表電極２と第２表電極３との間に並列配置された３つの硫化検出導体４（４Ａ，４Ｂ，４Ｃ）にギャップＧが形成されているため、硫化検出抵抗器１０の初期抵抗値はオープン状態となっている。 FIG. 5 is an explanatory diagram showing the relationship between the cumulative sulfurization amount and the resistance value when the sulfurization detection resistor 10 according to the present embodiment is arranged in a sulfurization gas atmosphere. As shown in FIG. 5, in the initial state before the sulfurization detection resistor 10 is exposed to the sulfurization gas, the three sulfurization detection conductors 4 (that are arranged in parallel between the first front electrode 2 and the second front electrode 3 ( Since the gap G is formed in 4A, 4B, 4C), the initial resistance value of the sulfuration detection resistor 10 is in the open state.
　この硫化検出抵抗器１０が硫化ガスを含む雰囲気中に配置されると、各硫化検出導体４の硫化検出部４ａが硫化ガスに接するため、硫化検出部４ａに生成した硫化銅の結晶がギャップＧ内に向かって徐々に伸長していく。ここで、３つの硫化検出導体４は銅の含有量を異にする材料で形成されており、本実施形態例の場合、図１の上段側の硫化検出導体４（４Ａ）に含まれる銅の含有量が最も多いため、累積硫化量が増えていくことに伴って、まず、当該硫化検出導体４の硫化検出部４ａ間に存するギャップＧが硫化銅を介して短絡する。その結果、第１表電極２と第２表電極３間が上段側の硫化検出導体４（４Ａ）とそれに接続する抵抗体５を介して導通状態となり、各抵抗体５の抵抗値を例えばＲとすると、硫化検出抵抗器１０から１つ分の抵抗体５の抵抗値Ｒが検出される。 When this sulfurization detecting resistor 10 is placed in an atmosphere containing a sulfurization gas, the sulfurization detecting portions 4a of the sulfurization detecting conductors 4 come into contact with the sulfurization gas, so that the copper sulfide crystals generated in the sulfurization detecting portion 4a form the gap G. It gradually expands inward. Here, the three sulfurization detection conductors 4 are formed of materials having different copper contents, and in the case of the present embodiment example, the sulfurization detection conductors 4 (4A) on the upper side of FIG. Since the content is the largest, the gap G existing between the sulfurization detection portions 4a of the sulfurization detection conductor 4 is short-circuited via the copper sulfide as the cumulative sulfurization amount increases. As a result, the first front electrode 2 and the second front electrode 3 are electrically connected to each other through the sulfurization detection conductor 4 (4A) on the upper stage side and the resistor 5 connected thereto, and the resistance value of each resistor 5 is, for example, R. Then, the resistance value R of one resistor 5 is detected from the sulfurization detection resistor 10.
　このように１つの硫化検出導体４（４Ａ）が導通状態になった後、さらに累積硫化量が増えていくと、２番目に銅の含有量が多い中段側の硫化検出導体４（４Ｂ）の硫化検出部４ａ間に存するギャップＧが硫化銅を介して短絡する。その結果、第１表電極２と第２表電極３間が、並列接続された上・中段の硫化検出導体４（４Ａ，４Ｂ）とそれらに接続する抵抗体５を介して導通状態となるため、硫化検出抵抗器１０から２つの抵抗体５を並列接続した分の抵抗値Ｒ／２が検出される。 After one sulfurization detection conductor 4 (4A) becomes conductive in this way, if the cumulative sulfurization amount further increases, the sulfuration detection conductor 4 (4B) on the middle stage side, which has the second highest copper content, The gap G existing between the sulfurization detecting portions 4a is short-circuited via the copper sulfide. As a result, the first front electrode 2 and the second front electrode 3 are electrically connected to each other via the upper and middle sulfide detection conductors 4 (4A, 4B) connected in parallel and the resistor 5 connected to them. The resistance value R/2 corresponding to two resistors 5 connected in parallel is detected from the sulfurization detection resistor 10.
　さらに累積硫化量が増えていくと、３番目に銅の含有量が多い下段側の硫化検出導体４（４Ｃ）の硫化検出部４ａ間に存するギャップＧも硫化銅を介して短絡する。その結果、第１表電極２と第２表電極３間が、並列接続された上・中・下段の硫化検出導体４（４Ａ，４Ｂ，４Ｃ）とそれらに接続する抵抗体５を介して導通状態となるため、硫化検出抵抗器１０から３つの抵抗体５を並列接続した分の抵抗値Ｒ／３が検出される。 When the cumulative sulfurization amount further increases, the gap G existing between the sulfurization detection portions 4a of the sulfurization detection conductor 4 (4C) on the lower side having the third highest copper content is also short-circuited via the copper sulfide. As a result, the first front electrode 2 and the second front electrode 3 are electrically connected via the upper, middle, and lower sulfurization detection conductors 4 (4A, 4B, 4C) connected in parallel and the resistor 5 connected to them. Since the state is brought into the state, the resistance value R/3 corresponding to the three resistors 5 connected in parallel is detected from the sulfurization detection resistor 10.
　以上説明したように、第１実施形態例に係る硫化検出抵抗器１０では、直列に連続する硫化検出導体４と抵抗体５の組が一対の表電極２，３間に複数組並列に接続されていると共に、各組の硫化検出導体４が所定のギャップＧを介して対向する硫化検出部４ａを有しており、硫化ガスに晒されることで生成する硫化銅の結晶が伸長してギャップＧ間に跨ることにより、各組の硫化検出導体４が異なるタイミングで導通状態となるため、一対の表電極２，３間の抵抗値変化が段階的に変化していき、硫化の度合いを正確かつ容易に検出することができる。なお、第１表電極２と第２表電極３との間に並列接続される硫化検出導体４と抵抗体５の組は、本実施形態例のような３組に限らず２組または４組以上であっても良い。 As described above, in the sulfidation detection resistor 10 according to the first embodiment, a plurality of sets of the sulfidation detection conductor 4 and the resistor 5 that are continuous in series are connected in parallel between the pair of front electrodes 2 and 3. In addition, each set of the sulfidation detecting conductors 4 has a sulfidation detecting portion 4a facing each other through a predetermined gap G, and the copper sulfide crystals generated by being exposed to the sulfiding gas are extended to form the gap G. By straddling the gaps, the sulfurization detection conductors 4 of each set are brought into conduction at different timings, so that the resistance value change between the pair of front electrodes 2 and 3 gradually changes to accurately and accurately determine the degree of sulfurization. It can be easily detected. In addition, the set of the sulfuration detection conductor 4 and the resistor 5 connected in parallel between the first front electrode 2 and the second front electrode 3 is not limited to three sets as in the present embodiment, but two sets or four sets. It may be more.
　また、第１実施形態例に係る硫化検出抵抗器１０では、複数の硫化検出導体４の硫化検出部４ａ間が導通するタイミングを異ならせる手段として、各硫化検出導体４が銅の含有量を相違する材料、具体的にはＮｉの含有量を異にするＣｕ系ペーストを用いて形成されているため、Ｃｕに添加するＮｉの含有量を調整することによって、用途に合わせた硫化検出導体４を容易に形成することができる。しかも、複数の硫化検出導体４にギャップＧを介して対向する硫化検出部４ａが形成されており、これら硫化検出部４ａが保護膜６から同じ表面積で露出しているため、硫化ガスを複数の硫化検出部４ａに対して同一条件で作用させることができ、各硫化検出導体４に形成されたギャップＧの導通タイミングを適切に異ならせることができる。 Further, in the sulfuration detection resistor 10 according to the first embodiment, each sulfurization detection conductor 4 has a different copper content as a means for making the timing of conduction between the sulfurization detection portions 4a of the plurality of sulfurization detection conductors 4 different. Since it is formed by using a Cu-based paste having a different Ni content, the sulfurization detection conductor 4 suitable for the application can be obtained by adjusting the Ni content added to Cu. It can be easily formed. Moreover, since the sulfurization detecting portions 4a facing the plurality of sulfurization detecting conductors 4 via the gap G are formed, and these sulfurization detecting portions 4a are exposed from the protective film 6 in the same surface area, a plurality of sulfurization gases can be detected. It is possible to act on the sulfidation detecting portion 4a under the same condition, and it is possible to appropriately vary the conduction timing of the gap G formed in each sulfidation detecting conductor 4.
　なお、各硫化検出導体４のギャップＧ間が導通するタイミングを異ならせる手段として、各硫化検出導体４を銅の含有量が相違する材料で形成する代わりに、銅の含有量が同じ材料の膜厚を各硫化検出導体４毎に異ならせるようにしても良、その場合、膜厚の厚い硫化検出導体４ほど硫化銅が多く生成するため、膜厚の厚い硫化検出導体４のギャップＧ間が早いタイミングで導通する。 As a means for changing the timings at which the gaps G of the sulfurization detecting conductors 4 are electrically connected, instead of forming the sulfurization detecting conductors 4 with materials having different copper contents, a film made of a material having the same copper content is used. The thickness may be different for each sulfurization detection conductor 4. In that case, since the larger the thickness of the sulfurization detection conductor 4 is, the more copper sulfide is generated, the gap G between the thickness of the sulfurization detection conductor 4 is increased. Conducts at an early timing.
　また、第１実施形態例に係る硫化検出抵抗器１０では、保護膜６が各硫化検出導体４と第１表電極２の接続部を覆う位置まで形成されており、保護膜６によって第１表電極２と硫化検出部４ａが隔てられているため、硫化検出抵抗器１０を回路基板に半田実装する際に、硫化検出部４ａが半田で覆われてしまうことを防止できる。また、表電極２，３をＡｇ等を用いて形成した場合に、硫化検出導体４側へのマイグレーションによって硫化検出部４ａの予期せぬ導通を防止することができる。 Further, in the sulfuration detection resistor 10 according to the first embodiment, the protective film 6 is formed up to the position where the connection portion between each sulfurization detection conductor 4 and the first front electrode 2 is covered. Since the electrode 2 and the sulfuration detection unit 4a are separated, it is possible to prevent the sulfuration detection unit 4a from being covered with solder when the sulfurization detection resistor 10 is mounted on the circuit board by soldering. Further, when the front electrodes 2 and 3 are formed by using Ag or the like, it is possible to prevent unexpected conduction of the sulfurization detecting portion 4a due to migration to the sulfurization detecting conductor 4 side.
　図６は本発明の第２実施形態例に係る硫化検出抵抗器２０の平面図であり、図１に対応する部分には同一符号を付すことで重複説明を省略する。 FIG. 6 is a plan view of the sulfuration detection resistor 20 according to the second embodiment of the present invention, and the portions corresponding to those in FIG.
　図６に示すように、第２実施形態例に係る硫化検出抵抗器２０は、複数の硫化検出導体４が有するギャップＧの間隔を異ならせることにより、各硫化検出導体４の硫化検出部４ａ間が導通するタイミングを異ならせるようにしており、それ以外の構成は第１実施形態例に係る硫化検出抵抗器１０と基本的に同じである。具体的には、図６中の上段に位置する硫化検出導体４のギャップをＧ１、中段に位置する硫化検出導体４のギャップをＧ２、下段に位置する硫化検出導体４のギャップをＧ３とすると、これらギャップＧ１，Ｇ２，Ｇ３の間隔はＧ１＜Ｇ２＜Ｇ３に設定されている。 As shown in FIG. 6, in the sulfurization detection resistor 20 according to the second embodiment, the gaps G of the plurality of sulfurization detection conductors 4 are made different from each other, so that the sulfurization detection portions 4a of the sulfurization detection conductors 4 are separated from each other. Are made to differ in the timing of conduction, and other configurations are basically the same as the sulfuration detection resistor 10 according to the first embodiment. Specifically, when the gap of the sulfurization detecting conductor 4 located in the upper stage in FIG. 6 is G1, the gap of the sulfurization detecting conductor 4 in the middle stage is G2, and the gap of the sulfurization detecting conductor 4 in the lower stage is G3, The gaps G1, G2, G3 are set to G1<G2<G3.
　このように構成された第２実施形態例に係る硫化検出抵抗器２０では、硫化ガスを含む雰囲気中に配置されると、まず、ギャップＧ１の間隔が最も狭い上段側の硫化検出導体４が導通状態となり、次にギャップＧ２の間隔が狭い中段側の硫化検出導体４が導通状態となり、最後に、ギャップＧ３の間隔が最も広い下段側の硫化検出導体４が導通状態となる。
したがって、前述した第１実施形態例と同様に、一対の表電極２，３間の抵抗値変化が段階的に変化していき、硫化の度合いを正確かつ容易に検出することができる。 In the sulfurization detection resistor 20 according to the second embodiment configured in this way, when the sulfurization detection resistor 20 is arranged in an atmosphere containing a sulfurization gas, first, the sulfurization detection conductor 4 on the upper stage side in which the gap G1 is the smallest is conductive. Then, the middle sulfide detection conductor 4 having the narrow gap G2 is brought into conduction, and finally the lower sulfide detection conductor 4 having the wide gap G3 is brought into conduction.
Therefore, similarly to the above-described first embodiment, the resistance value change between the pair of front electrodes 2 and 3 gradually changes, and the degree of sulfidation can be accurately and easily detected.
　また、第２実施形態例に係る硫化検出抵抗器２０では、各硫化検出導体４に形成されたギャップＧ１，Ｇ２，Ｇ３の間隔を異ならせることにより、累積硫化量の増加に伴って各硫化検出導体４が異なるタイミングで導通状態となるため、同一組成の材料（例えばＣｕ１００％）を用いて各硫化検出導体４を同一工程で形成することができる。また、この時に、各硫化検出導体４を第１表電極２および第２表電極３と同一組成の材料にて同一工程で形成しても良く、あるいは、同一組成の材料（例えばＮｉを３０％含有するＣｕ）を用いて各硫化検出導体４を抵抗体５と同一工程で形成しても良い。ただし、第１実施形態と同様に、各硫化検出導体４を銅の含有量が相違する材料で形成することも可能であり、その場合、ギャップの間隔が最も狭く設定された硫化検出導体４を銅の含有量が最も多い材料で形成することが好ましい。 Further, in the sulfurization detection resistor 20 according to the second embodiment, the gaps G1, G2, G3 formed in the sulfurization detection conductors 4 are made different so that each sulfurization detection is performed with an increase in the cumulative sulfurization amount. Since the conductors 4 become conductive at different timings, it is possible to form the sulfurization detection conductors 4 in the same step using a material having the same composition (for example, Cu100%). Further, at this time, each of the sulfurization detection conductors 4 may be formed of the material having the same composition as the first front electrode 2 and the second front electrode 3 in the same process, or the material having the same composition (for example, Ni of 30%). It is also possible to form each sulfide detection conductor 4 by using the contained Cu) in the same step as the resistor 5. However, as in the first embodiment, it is possible to form each of the sulfurization detection conductors 4 with a material having a different copper content, and in that case, the sulfurization detection conductors 4 with the narrowest gap interval are set. It is preferable to use a material having the highest copper content.
　図７は本発明の第３実施形態例に係る硫化検出抵抗器３０の平面図、図８は本発明の第４実施形態例に係る硫化検出抵抗器４０の平面図であり、図１に対応する部分には同一符号を付すことで重複説明を省略する。 7 is a plan view of a sulfurization detection resistor 30 according to the third embodiment of the present invention, and FIG. 8 is a plan view of a sulfurization detection resistor 40 according to the fourth embodiment of the present invention, which corresponds to FIG. The duplicated description will be omitted by giving the same reference numerals to the portions to be performed.
　図７に示すように、第３実施形態例に係る硫化検出抵抗器３０は、保護膜６に各硫化検出導体４の硫化検出部４ａの間に位置する帯状保護膜６ａが形成されており、それ以外の構成は第２実施形態例に係る硫化検出抵抗器２０と基本的に同じである。 As shown in FIG. 7, in the sulfurization detection resistor 30 according to the third embodiment, the protection film 6 has a band-shaped protection film 6a located between the sulfurization detection portions 4a of the respective sulfurization detection conductors 4, The other configurations are basically the same as those of the sulfuration detection resistor 20 according to the second embodiment.
　このように構成された第３実施形態例に係る硫化検出抵抗器３０では、第１表電極２と第２表電極３との間に並列配置された各硫化検出導体４の硫化検出部４ａの隣接間距離が狭くなった場合でも、隣接する硫化検出部４ａ間の予期せぬ短絡を帯状保護膜６ａによって抑制することができる。 In the sulfurization detection resistor 30 according to the third embodiment configured in this way, the sulfurization detection portion 4a of each sulfurization detection conductor 4 arranged in parallel between the first front electrode 2 and the second front electrode 3 Even if the distance between the adjacent ones becomes narrower, an unexpected short circuit between the adjacent sulfurization detection portions 4a can be suppressed by the strip-shaped protective film 6a.
　ここで、帯状保護膜６ａの幅寸法は隣接する硫化検出部４ａの間隔より狭くても良いが、図８に示す第４実施形態例に係る硫化検出抵抗器４０のように、帯状保護膜６ａの幅寸法を隣接する硫化検出部４ａの間隔よりも幅広に形成し、帯状保護膜６ａによって硫化検出部４ａの幅方向エッジ側を覆うようにすると、予期せぬ短絡をより効果的に抑制することができる。 Here, the width dimension of the band-shaped protective film 6a may be narrower than the interval between the adjacent sulfurization detection portions 4a, but like the sulfurization detection resistor 40 according to the fourth embodiment shown in FIG. If the width dimension of the sulfide is formed wider than the interval between the adjacent sulfurization detecting portions 4a and the band-shaped protective film 6a covers the widthwise edge side of the sulfurization detecting portions 4a, unexpected short circuit can be suppressed more effectively. be able to.
　なお、第３実施形態例と第４実施形態例では、各硫化検出導体４にギャップＧの間隔を異にする硫化検出部４ａが形成されており、これら硫化検出部４ａの間に帯状保護膜６ａを形成した場合について説明したが、このような帯状保護膜６ａを第１実施形態例に係る硫化検出抵抗器１０に適用し、ギャップＧの間隔が同じに設定された硫化検出部４ａの間に帯状保護膜６ａを形成しても良い。 In addition, in the third embodiment example and the fourth embodiment example, the sulfurization detection portions 4a having different gaps G are formed in each sulfurization detection conductor 4, and the band-shaped protective film is provided between the sulfurization detection portions 4a. Although the case where the 6a is formed has been described, such a band-shaped protective film 6a is applied to the sulfuration detection resistor 10 according to the first embodiment, and the sulfuration detection section 4a having the same gap G is set. Alternatively, the band-shaped protective film 6a may be formed.
　図９は本発明の第５実施形態例に係る硫化検出抵抗器５０の平面図であり、図１に対応する部分には同一符号を付すことで重複説明を省略する。 FIG. 9 is a plan view of a sulfurization detection resistor 50 according to the fifth embodiment of the present invention, and the portions corresponding to those in FIG.
　図９に示すように、第５実施形態例に係る硫化検出抵抗器５０は、第１表電極２と第２表電極３間に並列に接続された複数組の硫化検出導体４と抵抗体５のうち、例えば図中の上段と中段の硫化検出導体４にだけ保護膜６から露出する硫化検出部４ａが形成されており、保護膜６に覆われた下段の硫化検出導体４は外部に露出する硫化検出部を有していない。また、上段の硫化検出部４ａにギャップＧ１が形成されていると共に、中段の硫化検出部４ａにギャップＧ１よりも間隔の広いギャップＧ２が形成されているが、保護膜６に覆われた下段の硫化検出導体４にギャップは形成されていない。そして、この下段の硫化検出導体４とそれに接続する抵抗体５とで導通確保回路部を構成しており、それ以外の構成は第１実施形態例に係る硫化検出抵抗器１０と基本的に同じである。 As shown in FIG. 9, the sulfuration detection resistor 50 according to the fifth embodiment includes a plurality of sets of sulfurization detection conductors 4 and resistors 5 connected in parallel between the first front electrode 2 and the second front electrode 3. Among these, for example, the sulfurization detecting portion 4a exposed from the protective film 6 is formed only in the upper and middle sulfurization detecting conductors 4 in the figure, and the lower sulfurization detecting conductor 4 covered with the protective film 6 is exposed to the outside. It does not have a sulfurization detector. Further, a gap G1 is formed in the upper sulfide detection section 4a, and a gap G2 having a wider gap than the gap G1 is formed in the middle sulfide detection section 4a. No gap is formed in the sulfuration detecting conductor 4. The lower sulfurization detection conductor 4 and the resistor 5 connected to the lower sulfurization detection conductor constitute a circuit for ensuring continuity, and other configurations are basically the same as those of the sulfurization detection resistor 10 according to the first embodiment. Is.
　図１０は、第５実施形態例に係る硫化検出抵抗器５０を硫化ガス雰囲気中に配置した場合における累積硫化量と抵抗値の関係を示す説明図である。図１０に示すように、硫化検出抵抗器５０が硫化ガスに晒される前の初期状態において、保護膜６に覆われた導通確保回路部の硫化検出導体４とそれに接続する抵抗体５を介して両表電極２，３間が導通されているため、各抵抗体５の抵抗値を例えばＲとすると、硫化検出抵抗器５０の初期抵抗値として１つ分の抵抗体５の抵抗値Ｒが検出される。 FIG. 10 is an explanatory diagram showing the relationship between the cumulative sulfurization amount and the resistance value when the sulfurization detection resistor 50 according to the fifth embodiment is arranged in a sulfurization gas atmosphere. As shown in FIG. 10, in the initial state before the sulfurization detection resistor 50 is exposed to the sulfurization gas, the sulfuration detection conductor 4 of the circuit for ensuring continuity covered by the protective film 6 and the resistor 5 connected to the conductor 4 are connected via the resistor 5. Since the two front electrodes 2 and 3 are electrically connected to each other, assuming that the resistance value of each resistor 5 is, for example, R, the resistance value R of one resistor 5 is detected as the initial resistance value of the sulfuration detection resistor 50. To be done.
　そして、この硫化検出抵抗器５０が硫化ガスを含む雰囲気中に配置されると、まず、間隔の狭いギャップＧ１が形成された上段側の硫化検出導体４が導通状態となり、この時点で、上段側の硫化検出導体４に接続する抵抗体５と導通確保回路部の硫化検出導体４に接続する抵抗体５とを並列接続した２つ分の抵抗値Ｒ／２が検出される。さらに累積硫化量が増加していくと、間隔の広いギャップＧ２が形成された中段側の硫化検出導体４が導通状態となり、この時点で、上・中段側の硫化検出導体４に接続する抵抗体５と導通確保回路部の硫化検出導体４に接続する抵抗体５とを並列接続した３つ分の抵抗値Ｒ／３が検出される。したがって、前述した第１乃至第４実施形態例と同様に、一対の表電極２，３間の抵抗値変化が段階的に変化していき、硫化の度合いを正確かつ容易に検出することができる。 Then, when the sulfurization detecting resistor 50 is arranged in an atmosphere containing a sulfurizing gas, first, the sulfurization detecting conductor 4 on the upper stage side in which the gap G1 having a narrow interval is formed is brought into conduction, and at this time, the upper stage side. The resistance value R/2 for two resistors 5 connected in parallel to the resistor 5 connected to the sulfurization detection conductor 4 and the resistor 5 connected to the sulfurization detection conductor 4 in the conduction ensuring circuit portion is detected. As the cumulative sulfurization amount further increases, the middle-side sulfurization detection conductor 4 in which the wide gap G2 is formed becomes conductive, and at this time, the resistor connected to the upper/middle-side sulfurization detection conductor 4 is connected. The resistance value R/3 for three resistors 5 connected in parallel with the resistor 5 connected to the sulfurization detection conductor 4 of the circuit for ensuring continuity is detected. Therefore, similarly to the above-described first to fourth embodiments, the resistance value change between the pair of front electrodes 2 and 3 gradually changes, and the degree of sulfidation can be accurately and easily detected. ..
　このように構成された硫化検出抵抗器５０において、導通確保回路部の抵抗体５の抵抗値が、保護膜６から露出する各硫化検出導体４に接続する他の抵抗体５の抵抗値よりも低く設定されていると、累積硫化量の増加に伴って硫化検出導体４が導通したときに、抵抗値の低い抵抗体５を有する導通確保回路部に多くの電流が流れるため、硫化銅の結晶が硫化検出導体４の硫化検出部４ａ間に僅かに接触した場合に負荷が少なくなり、不要な過負荷断線等を防止することができる。 In the sulfuration detection resistor 50 configured as described above, the resistance value of the resistor 5 in the conduction ensuring circuit portion is lower than the resistance values of the other resistors 5 connected to the respective sulfurization detection conductors 4 exposed from the protective film 6. If the value is set low, a large amount of current will flow through the conduction ensuring circuit section having the resistor 5 having a low resistance value when the sulfurization detection conductor 4 becomes conductive as the cumulative amount of sulfurization increases, so that a crystal of copper sulfide is formed. When a slight contact occurs between the sulfurization detecting portions 4a of the sulfurization detecting conductor 4, the load is reduced, and unnecessary overload disconnection or the like can be prevented.
　なお、第５実施形態例に係る硫化検出抵抗器５０において、導通確保回路部の硫化検出導体４は硫化ガスの検出に関与しないため、第１表電極２に第２表電極３に向かって延びる突出部を一体形成し、この突出部を導通確保回路部の硫化検出導体４とすることも可能である。また、保護膜６から露出する複数の硫化検出導体４に形成されるギャップＧの間隔は同じであっても良く、その場合は、各硫化検出導体４を銅の含有量が異なる材料で形成したり、銅の含有量が同じ材料の膜厚を各硫化検出導体４毎に異ならせるようにすれば良い。 In the sulfurization detection resistor 50 according to the fifth embodiment, the sulfurization detection conductor 4 of the conduction ensuring circuit portion does not participate in the detection of the sulfurization gas, and therefore extends from the first front electrode 2 toward the second front electrode 3. It is also possible to integrally form the protruding portion and use this protruding portion as the sulfuration detecting conductor 4 of the circuit for ensuring conduction. Further, the gaps G formed in the plurality of sulfurization detecting conductors 4 exposed from the protective film 6 may have the same intervals. In that case, each sulfurization detecting conductor 4 is formed of a material having a different copper content. Alternatively, the film thickness of a material having the same copper content may be different for each sulfurization detection conductor 4.
　図１１は本発明の第６実施形態例に係る硫化検出抵抗器６０の平面図であり、図１に対応する部分には同一符号を付すことで重複説明を省略する。 FIG. 11 is a plan view of a sulfurization detection resistor 60 according to a sixth embodiment of the present invention, and the portions corresponding to those in FIG.
　図１１に示すように、第６実施形態例に係る硫化検出抵抗器６０は、第１表電極２に接続された３つの硫化検出導体４に対応するように、第２表電極３に３つの測定用導体１１を並列に接続し、これら対応する硫化検出導体４と測定用導体１１との間にそれぞれ抵抗体５を直列に接続すると共に、各抵抗体５に抵抗値調整用のトリミング溝５ａが形成されており、それ以外の構成は第２実施形態例に係る硫化検出抵抗器２０と基本的に同じである。 As shown in FIG. 11, the sulfuration detection resistor 60 according to the sixth embodiment example has three sulfurization detection conductors 4 connected to the first front electrode 2 and three sulfurization detection conductors 4 connected to the second front electrode 3. The measurement conductors 11 are connected in parallel, the resistors 5 are connected in series between the corresponding sulfurization detection conductors 4 and the measurement conductors 11, and the resistance values are trimmed in the trimming grooves 5a. Is formed, and the other structure is basically the same as the sulfuration detection resistor 20 according to the second embodiment.
　このように構成された第６実施形態例に係る硫化検出抵抗器６０では、並列配置された各抵抗体５の両端部に、硫化検出導体４の一方の硫化検出部４ａと測定用導体１１とが接続されているため、各組の抵抗体５の抵抗値をトリミングする際に、個々の抵抗体５の両端部に接続された硫化検出部４ａと測定用導体１１にプローブを当接させながらトリミングを行うことができる。 In the sulfuration detection resistor 60 according to the sixth embodiment thus configured, one sulfurization detection portion 4a of the sulfurization detection conductor 4 and the measurement conductor 11 are provided at both ends of each resistor 5 arranged in parallel. Therefore, when trimming the resistance values of the resistors 5 of each set, while abutting the probes on the sulfurization detection portions 4a and the measurement conductors 11 connected to both ends of each resistor 5, Trimming can be done.
　また、第６実施形態例に係る硫化検出抵抗器６０において、抵抗体５の一端部だけでなく両端部に測定用導体１１を接続し、これら測定用導体１１を第２表電極３と硫化検出導体４の一方の硫化検出部４ａとに接続するようにしても良く、このように構成すると、より高精度に抵抗体５の抵抗値調整を行うことができる。 Further, in the sulfuration detection resistor 60 according to the sixth embodiment, the measurement conductors 11 are connected not only to one end of the resistor 5 but also to both ends thereof, and the measurement conductors 11 are connected to the second surface electrode 3 and the sulfurization detection. The conductor 4 may be connected to one of the sulfurization detection portions 4a. With this structure, the resistance value of the resistor 5 can be adjusted with higher accuracy.
　なお、上述した各実施形態例では、各硫化検出導体４の硫化検出部４ａ間に存するギャップＧが絶縁基板１の短手方向に沿って直線状に延びる形状となっているが、ギャップＧをくの字状、クランク状、鋸刃形状、波形形状、渦巻き形状等の蛇行形状にすると、全長の長いギャップＧを一対の硫化検出部４ａ間に介在させることができるため、導通を検出する範囲が長くなって検出精度が向上する。 In each of the above-described embodiments, the gap G existing between the sulfurization detecting portions 4a of the sulfurization detecting conductors 4 has a shape that extends linearly along the lateral direction of the insulating substrate 1. When a meandering shape such as a dogleg shape, a crank shape, a sawtooth shape, a corrugated shape, or a spiral shape can be formed, a gap G having a long overall length can be interposed between the pair of sulfurization detection portions 4a, and therefore, a range for detecting conduction Is longer and the detection accuracy is improved.
　１０，２０，３０，４０，５０，６０　硫化検出抵抗器
　１　絶縁基板
　２　第１表電極
　３　第２表電極
　４，４Ａ，４Ｂ，４Ｃ　硫化検出導体
　４ａ　硫化検出部
　５　抵抗体
　６　保護膜
　６ａ　帯状保護膜
　７　裏電極
　８　端面電極
　９　外部電極
　１０Ａ　大判基板
　１０Ｂ　短冊状基板
　１０ｃ　チップ状基板
　１１　測定用導体
　Ｇ，Ｇ１，Ｇ２，Ｇ３　ギャップ 10, 20, 30, 40, 50, 60 Sulfidation detection resistor 1 Insulating substrate 2 First table electrode 3 Second table electrode 4, 4A, 4B, 4C Sulfidation detection conductor 4a Sulfidation detection part 5 Resistor 6 Protective film 6a Band Protective film 7 Back electrode 8 End surface electrode 9 External electrode 10A Large-sized substrate 10B Strip substrate 10c Chip substrate 11 Conductor for measurement G, G1, G2, G3 Gap

Claims (10)

  1. 　直方体形状の絶縁基板と、
    　前記絶縁基板の主面における両端部に形成された一対の表電極と、
    　一方の前記表電極に並列に接続された銅を主成分とする複数の硫化検出導体と、
    　他方の前記表電極と前記硫化検出導体との間に接続された複数の抵抗体と、
    　前記抵抗体の全体および前記硫化検出導体の一部を覆うように形成された保護膜と、
    　を備え、
    　前記硫化検出導体は前記保護膜に覆われずに所定のギャップを隔てて対向する硫化検出部を有しており、
    　複数の前記硫化検出導体に形成された前記ギャップが、前記硫化検出部の累積的な硫化に伴って異なるタイミングで導通することを特徴とする硫化検出抵抗器。     A rectangular parallelepiped insulating substrate,
    A pair of front electrodes formed on both ends of the main surface of the insulating substrate,
    A plurality of sulfurization detection conductors mainly composed of copper connected in parallel to one of the front electrodes,
    A plurality of resistors connected between the other front electrode and the sulfurization detection conductor,
    A protective film formed to cover the entire resistor and a part of the sulfurization detection conductor,
    Equipped with
    The sulfidation detection conductor has a sulfidation detection portion that is not covered by the protective film and faces each other with a predetermined gap,
    A sulfuration detection resistor, wherein the gaps formed in the plurality of sulfurization detection conductors conduct at different timings due to cumulative sulfurization of the sulfurization detection unit.
  2. 　請求項１に記載の硫化検出抵抗器において、
    　複数の前記硫化検出導体は銅の含有量を異にする材料で形成されていることを特徴とする硫化検出抵抗器。     The sulfuration detection resistor according to claim 1,
    A sulfurization detection resistor, wherein the plurality of sulfurization detection conductors are formed of materials having different copper contents.
  3. 　請求項１に記載の硫化検出抵抗器において、
    　複数の前記硫化検出導体は間隔を異にする前記ギャップを有していることを特徴とする硫化検出抵抗器。     The sulfuration detection resistor according to claim 1,
    A sulfurization detection resistor, wherein the plurality of sulfurization detection conductors have the gaps with different intervals.
  4. 　請求項１に記載の硫化検出抵抗器において、
    　前記保護膜は、前記複数の硫化検出導体と一方の前記表電極との接続部を覆うように形成されていることを特徴とする硫化検出抵抗器。     The sulfuration detection resistor according to claim 1,
    The sulfuration detection resistor is characterized in that the protective film is formed so as to cover a connection portion between the plurality of sulfurization detection conductors and one of the front electrodes.
  5. 　請求項１に記載の硫化検出抵抗器において、
    　並列配置された複数の前記硫化検出部の間に帯状保護膜が形成されていることを特徴とする硫化検出抵抗器。     The sulfuration detection resistor according to claim 1,
    A sulfuration detection resistor, wherein a band-shaped protective film is formed between the plurality of sulfurization detection portions arranged in parallel.
  6. 　請求項５に記載の硫化検出抵抗器において、
    　前記帯状保護膜は前記硫化検出部の幅方向エッジ側を覆っていることを特徴とする硫化検出抵抗器。     The sulfurization detection resistor according to claim 5,
    A sulfuration detecting resistor, wherein the band-shaped protective film covers an edge side in the width direction of the sulfuration detecting portion.
  7. 　請求項１に記載の硫化検出抵抗器において、
    　前記一対の表電極間に導通確保回路部が前記硫化検出導体と並列に配置されており、前記導通確保回路部が直列に接続された抵抗体と導体とからなると共に、これら抵抗体と導体の全体が前記保護膜で覆われていることを特徴とする硫化検出抵抗器。     The sulfuration detection resistor according to claim 1,
    A conduction ensuring circuit portion is arranged in parallel with the sulfurization detection conductor between the pair of front electrodes, and the conduction ensuring circuit portion is composed of a resistor and a conductor connected in series, and A sulfuration detecting resistor, characterized in that the whole is covered with the protective film.
  8. 　請求項７に記載の硫化検出抵抗器において、
    　前記導通確保回路部の前記抵抗体は、前記硫化検出導体に接続する他の抵抗体よりも抵抗値が低く設定されていることを特徴とする硫化検出抵抗器。     The sulfuration detection resistor according to claim 7,
    The sulfidity detecting resistor, wherein the resistance of the continuity ensuring circuit unit is set to have a resistance value lower than that of other resistors connected to the sulfurization detecting conductor.
  9. 　請求項１に記載の硫化検出抵抗器において、
    　前記一対の表電極間に連続して形成された前記抵抗体および前記硫化検出導体のうち、前記抵抗体にトリミング溝が形成されていると共に、該抵抗体の両端部に前記硫化検出導体と測定用導体が接続されていることを特徴とする硫化検出抵抗器。     The sulfuration detection resistor according to claim 1,
    Of the resistor and the sulfurization detection conductor that are continuously formed between the pair of front electrodes, a trimming groove is formed in the resistor and the sulfuration detection conductor is measured at both ends of the resistor. A sulfuration detection resistor characterized in that a conductor for use is connected.
  10. 　請求項１に記載の硫化検出抵抗器において、
    　前記ギャップは蛇行形状であることを特徴とする硫化検出抵抗器。     The sulfuration detection resistor according to claim 1,
    The sulfur detection resistor, wherein the gap has a meandering shape.
PCT/JP2019/050684 2019-02-04 2019-12-24 Sulfurization detection resistor WO2020162067A1 (en)

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