JP2021012067A - Sulfuration detection sensor - Google Patents

Sulfuration detection sensor Download PDF

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JP2021012067A
JP2021012067A JP2019125515A JP2019125515A JP2021012067A JP 2021012067 A JP2021012067 A JP 2021012067A JP 2019125515 A JP2019125515 A JP 2019125515A JP 2019125515 A JP2019125515 A JP 2019125515A JP 2021012067 A JP2021012067 A JP 2021012067A
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sulfurization
electrode
resistor
detection sensor
intermediate electrode
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松本 健太郎
Kentaro Matsumoto
健太郎 松本
太郎 木村
Taro Kimura
太郎 木村
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Koa Corp
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Abstract

To provide a sulfuration detection sensor that can prevent bursting of a sulfuration detection body and can accurately detect the degree of sulfuration.SOLUTION: A sulfuration detection sensor 10 comprises: an insulating substrate in a rectangular parallelepiped shape; a pair of front electrodes 2 that are formed at both ends of a principal surface of the insulating electrode; an intermediate electrode 3 that is formed between the pair of front electrodes 2; a resistor 4 that is formed between the intermediate electrode 3 and one front electrode 2; a sulfuration detection conductor 5 that is formed between the intermediate electrode 3 and the other front electrode 2; and a sulfurated gas non-permeable protective film 6 that covers at least the resistor 4. The sulfuration detection conductor 5 is formed of silver (Ag), and the front electrode 2 and intermediate electrode 3 are formed of a material containing palladium (Pd) in an amount of 5 to 40% by mass.SELECTED DRAWING: Figure 1

Description

本発明は、腐食環境の累積的な硫化量を検出するための硫化検出センサに関する。 The present invention relates to a sulfurization detection sensor for detecting the cumulative amount of sulfurization in a corrosive environment.

一般的にチップ抵抗器等の電子部品の内部電極としては、比抵抗の低いAg(銀)系の電極材料が使用されているが、銀は硫化ガスに曝されると硫化銀となり、硫化銀は絶縁物であることから、電子部品が断線してしまうという不具合が発生してしまう。そこで近年では、AgにPd(パラジウム)やAu(金)を添加して硫化しにくい電極を形成したり、電極を硫化ガスが到達しにくい構造にする等の硫化対策が講じられている。 Generally, Ag (silver) -based electrode materials with low resistivity are used as internal electrodes of electronic components such as chip resistors, but silver becomes silver sulfide when exposed to sulfide gas, and silver sulfide. Since is an insulator, there is a problem that the electronic component is broken. Therefore, in recent years, sulfurization measures such as adding Pd (palladium) or Au (gold) to Ag to form an electrode that is difficult to sulfurize, or making the electrode a structure that is difficult for sulfurized gas to reach have been taken.

しかし、このような硫化対策を電子部品に講じたとしても、当該電子部品が硫化ガス中に長期間曝された場合や高濃度の硫化ガスに曝された場合は、断線を完全に防ぐことが難しくなるため、未然に断線を検知して予期せぬタイミングでの故障発生を防止することが必要となる。 However, even if such measures against sulfurization are taken for electronic components, disconnection can be completely prevented when the electronic components are exposed to sulfurized gas for a long period of time or exposed to high-concentration sulfurized gas. Since it becomes difficult, it is necessary to detect the disconnection in advance and prevent the occurrence of a failure at an unexpected timing.

そこで従来より、特許文献1に記載されているように、電子部品の累積的な硫化の度合いを検出して、電子部品が硫化断線する等して故障する前に危険性を検出可能とした硫化検出センサが提案されている。特許文献1に記載された硫化検出センサは、絶縁基板上にAgを主体とした硫化検出体を形成し、この硫化検出体を覆うように透明で硫化ガス透過性のある保護膜を形成すると共に、絶縁基板の両側端部に硫化検出体に接続する端面電極を形成した構成となっている。 Therefore, conventionally, as described in Patent Document 1, sulfurization that can detect the degree of cumulative sulfurization of an electronic component and detect the risk before the electronic component fails due to sulfurization disconnection or the like. Detection sensors have been proposed. The sulfurization detection sensor described in Patent Document 1 forms a sulfurization detector mainly composed of Ag on an insulating substrate, and forms a transparent and sulfide gas permeable protective film so as to cover the sulfurization detector. , The end face electrodes connected to the sulfurization detector are formed on both side ends of the insulating substrate.

このように構成された硫化検出センサを他の電子部品と共に回路基板上に実装した後、該回路基板を硫化ガスを含む雰囲気で使用すると、硫化ガスが硫化検出センサの保護膜を透過して硫化検出体に接するため、硫化ガスの濃度と経過時間に応じて硫化検出体を構成する銀が硫化銀に変化し、それに伴って硫化検出センサの抵抗値が次第に上昇していき、最終的には硫化検出体の断線に至る。したがって、硫化検出体の抵抗値変化や断線を検出することにより、硫化の度合いを検出することが可能となっている。 When the sulfurization detection sensor configured in this way is mounted on a circuit board together with other electronic components and then used in an atmosphere containing sulfurization gas, the sulfurization gas permeates the protective film of the sulfurization detection sensor and becomes sulfurized. Since it is in contact with the detector, the silver that constitutes the sulfide detector changes to silver sulfide according to the concentration of the sulfide gas and the elapsed time, and the resistance value of the sulfide detection sensor gradually increases accordingly, and finally, It leads to disconnection of the sulfurization detector. Therefore, it is possible to detect the degree of sulfurization by detecting the change in the resistance value of the sulfurization detector and the disconnection.

特開2009−250611号公報Japanese Unexamined Patent Publication No. 2009-250611

しかし、特許文献1に記載された硫化検出センサは、硫化ガスが硫化ガス透過性の保護膜を透過して硫化検出体に接するようになっているため、硫化検出体が保護膜に接する表面側から膜厚方向に硫化していく際に、膜厚の薄くなった硫化検出体の発熱によって保護膜が変質してしまうことがある。その場合、保護膜による硫化ガスの透過性が低下するため、硫化ガスの検出精度が著しく悪化してしまうことになる。 However, in the sulfurization detection sensor described in Patent Document 1, since the sulfurization gas permeates the sulfurization gas permeable protective film and comes into contact with the sulfurization detector, the surface side of the sulfurization detector in contact with the protective film. When sulfurizing in the film thickness direction, the protective film may be denatured due to the heat generated by the sulfurized detector whose film thickness has become thinner. In that case, since the permeability of the sulfide gas by the protective film is lowered, the detection accuracy of the sulfide gas is significantly deteriorated.

なお、硫化検出体を硫化ガス透過性の保護膜で被覆せず、硫化ガスが硫化検出体に直接触れるように構成することも考えられるが、その場合、硫化によって膜厚の薄くなった硫化検出体が発熱することで、硫化検出体が断線する際に爆ぜやすくなり、硫化検出体を構成する銀が周囲に飛散して回路基板上の回路を短絡させてしまう虞がある。 It is conceivable that the sulfurization detector is not covered with a protective film that is permeable to sulfurization gas, and the sulfurization gas is configured to come into direct contact with the sulfurization detector. In that case, the sulfurization detection whose film thickness is reduced by sulfurization When the body generates heat, it becomes easy to explode when the sulfurization detector is disconnected, and there is a risk that the silver constituting the sulfurization detector may scatter around and short-circuit the circuit on the circuit board.

本発明は、このような従来技術の実情に鑑みてなされたもので、その目的は、硫化検出体の爆ぜを防止することができると共に、硫化の度合いを高精度に検出することができる硫化検出センサを提供することにある。 The present invention has been made in view of the actual conditions of the prior art, and an object of the present invention is to detect sulfurization, which can prevent the explosion of the sulfurization detector and detect the degree of sulfurization with high accuracy. It is to provide a sensor.

上記の目的を達成するために、本発明の硫化検出センサは、直方体形状の絶縁基板と、前記絶縁基板の主面における両端部に形成された一対の表電極と、一対の前記表電極間に形成された中間電極と、前記中間電極と一方の前記表電極との間に形成された抵抗体と、前記中間電極と他方の前記表電極との間に形成された硫化検出導体と、少なくとも前記抵抗体を覆う硫化ガス非透過性の保護膜と、を備え、硫化検出導体が銀からなると共に、前記表電極と前記中間電極が銀にパラジウムを5〜40質量%含有する材料からなることを特徴としている。 In order to achieve the above object, the sulfurization detection sensor of the present invention has a rectangular body-shaped insulating substrate, a pair of front electrodes formed on both ends of the main surface of the insulating substrate, and a pair of front electrodes. An intermediate electrode formed, a resistor formed between the intermediate electrode and one of the surface electrodes, a sulfurization detection conductor formed between the intermediate electrode and the other surface electrode, and at least the above. A sulfide gas impermeable protective film covering the resistor is provided, the sulfide detection conductor is made of silver, and the front electrode and the intermediate electrode are made of a material containing 5 to 40% by mass of palladium in silver. It is a feature.

このように構成された硫化検出センサでは、硫化検出導体に流れる電流が抵抗体によって制限されるため、硫化に伴って膜厚の薄くなった硫化検出導体の発熱が抑制され、硫化検出導体が断線する際に爆ぜることを防止できる。しかも、硫化検出導体と抵抗体との間に硫化しにくい中間電極(銀にパラジウムを5〜40質量%含有する材料)が介設されており、該中間電極によって硫化検出導体の銀が抵抗体側に拡散してしまうことを抑制できるため、抵抗体を接続しても硫化検出導体の検出精度に悪影響を及ぼすことはなくなる。なお、中間電極におけるパラジウムの含有量が5質量%未満であると、銀の拡散を抑制する効果が不十分になってしまい、パラジウムの含有量が40質量%を超えると、抵抗値が高くなり過ぎてしまい好ましくない。 In the sulfurization detection sensor configured in this way, the current flowing through the sulfurization detection conductor is limited by the resistor, so that the heat generation of the sulfurization detection conductor, which has become thinner due to sulfurization, is suppressed, and the sulfurization detection conductor is disconnected. You can prevent it from exploding when you do it. Moreover, an intermediate electrode (a material containing 5 to 40% by mass of palladium in silver) that is difficult to sulfide is interposed between the sulfide detection conductor and the resistor, and the silver of the sulfide detection conductor is placed on the resistor side by the intermediate electrode. Even if a resistor is connected, the detection accuracy of the sulfide detection conductor will not be adversely affected. If the content of palladium in the intermediate electrode is less than 5% by mass, the effect of suppressing the diffusion of silver becomes insufficient, and if the content of palladium exceeds 40% by mass, the resistance value becomes high. It's too much and it's not preferable.

上記構成の硫化検出センサにおいて、硫化ガス非透過性の保護膜が中間電極の全体を覆うように形成されていても良いが、中間電極が保護膜から露出する露出部を有し、該露出部に外部接続層が形成されていると、この外部接続層をワイヤボンディング用の接続部として使用することにより、立体的な配線構造を有する回路基板にも実装することができる。 In the sulfide detection sensor having the above configuration, a protective film impermeable to sulfide gas may be formed so as to cover the entire intermediate electrode, but the intermediate electrode has an exposed portion exposed from the protective film, and the exposed portion is provided. When an external connection layer is formed on the surface, the external connection layer can be mounted on a circuit board having a three-dimensional wiring structure by using the external connection layer as a connection portion for wire bonding.

また、上記構成の硫化検出センサにおいて、抵抗体に抵抗値調整用のトリミング溝が形成されており、該トリミング溝を含めて抵抗体の全体が保護膜で覆われていると、抵抗体の両端部に接続する表電極と中間電極に測定用の検出プローブを当接させた状態で、抵抗体の抵抗値調整を高精度に行うことができる。 Further, in the sulfurization detection sensor having the above configuration, if a trimming groove for adjusting the resistance value is formed in the resistor and the entire resistor including the trimming groove is covered with a protective film, both ends of the resistor are formed. The resistance value of the resistor can be adjusted with high accuracy in a state where the detection probe for measurement is in contact with the surface electrode and the intermediate electrode connected to the unit.

本発明によれば、硫化検出導体に抵抗体を直列に接続することにより、硫化検出導体が断線する際の爆ぜを防止することができると共に、硫化検出導体と抵抗体との間に中間電極を介設することにより、硫化検出導体の銀が抵抗体側に拡散してしまうことを抑制して、硫化の度合いを高精度に検出することができる。 According to the present invention, by connecting a resistor in series to the sulfide detection conductor, it is possible to prevent explosion when the sulfide detection conductor is broken, and an intermediate electrode is provided between the sulfide detection conductor and the resistor. By interposing it, it is possible to prevent the silver of the sulfide detection conductor from diffusing toward the resistor side, and to detect the degree of sulfide with high accuracy.

本発明の第1実施形態例に係る硫化検出センサの平面図である。It is a top view of the sulfurization detection sensor which concerns on 1st Embodiment of this invention. 図1のII−II線に沿う断面図である。It is sectional drawing which follows the line II-II of FIG. 該硫化検出センサの製造工程を示す平面図である。It is a top view which shows the manufacturing process of the sulfurization detection sensor. 該硫化検出センサの製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of the sulfurization detection sensor. 本発明の第2実施形態例に係る硫化検出センサの平面図である。It is a top view of the sulfurization detection sensor which concerns on 2nd Embodiment of this invention. 図5のVI−VI線に沿う断面図である。It is sectional drawing which follows the VI-VI line of FIG. 本発明の第3実施形態例に係る硫化検出センサの平面図である。It is a top view of the sulfurization detection sensor which concerns on 3rd Embodiment of this invention.

以下、発明の実施の形態について図面を参照しながら説明すると、図1は本発明の第1実施形態例に係る硫化検出センサの平面図、図2は図1のII−II線に沿う断面図である。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of the sulfurization detection sensor according to the first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line II-II of FIG. Is.

図1と図2に示すように、第1実施形態例に係る硫化検出センサ10は、直方体形状の絶縁基板1と、絶縁基板1の表面における長手方向両端部に形成された一対の表電極2と、これら一対の表電極2間に形成された中間電極3と、この中間電極3と一方(図示左側)の表電極2との間に形成された抵抗体4と、中間電極3と他方(図示右側)の表電極2との間に形成された硫化検出導体5と、中間電極3と抵抗体4の全体および硫化検出導体5の一部を覆う硫化ガス非透過性の保護膜6と、絶縁基板1の裏面の長手方向両端部に形成された一対の裏電極7と、絶縁基板1の長手方向両端部に形成された一対の端面電極8と、表電極2と裏電極7および端面電極8の表面に形成された一対の外部電極9と、によって主として構成されている。 As shown in FIGS. 1 and 2, the sulfurization detection sensor 10 according to the first embodiment has a rectangular body-shaped insulating substrate 1 and a pair of surface electrodes 2 formed on both ends in the longitudinal direction on the surface of the insulating substrate 1. And the intermediate electrode 3 formed between the pair of surface electrodes 2, the resistor 4 formed between the intermediate electrode 3 and one (left side in the drawing) surface electrode 2, the intermediate electrode 3 and the other ( A sulfide detection conductor 5 formed between the surface electrode 2 on the right side of the drawing, a sulfide gas impermeable protective film 6 covering the entire intermediate electrode 3 and the resistor 4 and a part of the sulfide detection conductor 5 A pair of back electrodes 7 formed on both ends in the longitudinal direction of the back surface of the insulating substrate 1, a pair of end face electrodes 8 formed on both ends in the longitudinal direction of the insulating substrate 1, a front electrode 2, a back electrode 7, and an end face electrode. It is mainly composed of a pair of external electrodes 9 formed on the surface of 8.

絶縁基板1は、後述する大判基板を縦横の分割溝に沿って分割して多数個取りされたものであり、大判基板の主成分はアルミナを主成分とするセラミックス基板である。 The insulating substrate 1 is obtained by dividing a large-format substrate, which will be described later, along vertical and horizontal dividing grooves and taking a large number of the insulating substrate 1, and the main component of the large-format substrate is a ceramic substrate containing alumina as a main component.

一対の表電極2は、銀(Ag)にパラジウム(Pd)を5〜40質量%含有するAg系ペーストをスクリーン印刷して乾燥・焼成したものであり、これら両表電極2は所定間隔を存して対向するように絶縁基板1の長手方向両端部に形成されている。中間電極3も銀にパラジウムを5〜40質量%含有するAg系ペーストをスクリーン印刷して乾燥・焼成したものであり、中間電極3は一対の表電極2の中間位置に形成されている。 The pair of surface electrodes 2 are obtained by screen-printing an Ag-based paste containing 5 to 40% by mass of palladium (Pd) in silver (Ag), drying and firing, and these two surface electrodes 2 have a predetermined interval. It is formed at both ends in the longitudinal direction of the insulating substrate 1 so as to face each other. The intermediate electrode 3 is also made by screen-printing an Ag-based paste containing 5 to 40% by mass of palladium in silver, drying and firing, and the intermediate electrode 3 is formed at an intermediate position between the pair of surface electrodes 2.

抵抗体4は、酸化ルテニウム等の抵抗体ペーストをスクリーン印刷して乾燥・焼成したものである。抵抗体4の両端部は一方の表電極2と中間電極3に接続されており、抵抗体4には抵抗値調整用のトリミング溝4aが形成されている。図示省略されているが、抵抗体4はガラスコート層によって覆われており、このガラスコート層の上からレーザ光を照射することにより、抵抗体4にトリミング溝4aが形成されている。 The resistor 4 is obtained by screen-printing a resistor paste such as ruthenium oxide, drying and firing it. Both ends of the resistor 4 are connected to one of the surface electrodes 2 and the intermediate electrode 3, and the resistor 4 is formed with a trimming groove 4a for adjusting the resistance value. Although not shown, the resistor 4 is covered with a glass coat layer, and a trimming groove 4a is formed in the resistor 4 by irradiating a laser beam from above the glass coat layer.

硫化検出導体5は、銀を主成分とするAgペーストをスクリーン印刷して乾燥・焼成したものであり、硫化検出導体5の両端部は他方の表電極2と中間電極3に接続されている。すなわち、一対の表電極2の間に中間電極3を介して抵抗体4が直列に接続されている。硫化検出導体5の両端部は保護膜6によって覆われており、保護膜6から露出する部分の硫化検出導体5は硫化ガスを検出可能な硫化検出部5aとなっている。 The sulfide detection conductor 5 is obtained by screen-printing an Ag paste containing silver as a main component, drying and firing, and both ends of the sulfide detection conductor 5 are connected to the other surface electrode 2 and the intermediate electrode 3. That is, the resistor 4 is connected in series between the pair of surface electrodes 2 via the intermediate electrode 3. Both ends of the sulfurization detection conductor 5 are covered with a protective film 6, and the sulfurization detection conductor 5 exposed from the protective film 6 is a sulfurization detection unit 5a capable of detecting sulfurized gas.

保護膜6は、エポキシ系樹脂ペーストをスクリーン印刷して加熱硬化させたものであり、この保護膜6は中間電極3と抵抗体4の全体を覆うように形成されている。また、硫化検出導体5の両端部も保護膜6によって覆われており、前述したように、硫化検出導体5の硫化検出部5aは保護膜6に覆われずに外部に露出している。 The protective film 6 is obtained by screen-printing an epoxy resin paste and heat-curing it, and the protective film 6 is formed so as to cover the entire intermediate electrode 3 and the resistor 4. Further, both ends of the sulfurization detection conductor 5 are also covered with the protective film 6, and as described above, the sulfurization detection portion 5a of the sulfurization detection conductor 5 is not covered by the protective film 6 and is exposed to the outside.

一対の裏電極7は、Ag系ペーストをスクリーン印刷して乾燥・焼成したものであり、これら裏電極7は絶縁基板1の表面側の表電極2と対応する位置に形成されている。 The pair of back electrodes 7 are made by screen-printing an Ag-based paste, drying and firing, and these back electrodes 7 are formed at positions corresponding to the front electrodes 2 on the front surface side of the insulating substrate 1.

一対の端面電極8は、絶縁基板1の端面にNi/Crをスパッタしたものであり、これら端面電極8は対応する表電極2と裏電極7間を導通するように形成されている。 The pair of end face electrodes 8 are obtained by sputtering Ni / Cr on the end faces of the insulating substrate 1, and these end face electrodes 8 are formed so as to conduct electricity between the corresponding front electrode 2 and the back electrode 7.

一対の外部電極9はバリヤー層と外部接続層の2層構造からなり、そのうちバリヤー層は電解メッキによって形成されたNiメッキ層であり、外部接続層は電解メッキによって形成されたSnメッキ層である。これら外部電極9により、表電極2と裏電極7および端面電極8の表面が被覆されている。 The pair of external electrodes 9 has a two-layer structure consisting of a barrier layer and an external connection layer, of which the barrier layer is a Ni plating layer formed by electrolytic plating and the external connection layer is a Sn plating layer formed by electrolytic plating. .. The surfaces of the front electrode 2, the back electrode 7, and the end face electrode 8 are covered with these external electrodes 9.

次に、このように構成された硫化検出センサ10の製造工程について、図3と図4を用いて説明する。なお、図3(a)〜(f)はこの製造工程で用いられる大判基板を表面的に見た平面図、図4(a)〜(f)は図3(a)〜(f)の長手方向中央部に沿った1チップ相当分の断面図をそれぞれ示している。 Next, the manufacturing process of the sulfurization detection sensor 10 configured in this way will be described with reference to FIGS. 3 and 4. 3 (a) to 3 (f) are topographical views of the large-format substrate used in this manufacturing process, and FIGS. 4 (a) to 4 (f) are the lengths of FIGS. 3 (a) to 3 (f). Cross-sectional views corresponding to one chip along the central portion of the direction are shown.

まず、絶縁基板1が多数個取りされる大判基板を準備する。この大判基板には予め1次分割溝と2次分割溝が格子状に設けられており、両分割溝によって区切られたマス目の1つ1つが1個分のチップ領域となる。図3と図4には1個分のチップ領域に相当する大判基板11Aが代表して示されているが、実際は多数個分のチップ領域に相当する大判基板に対して以下に説明する各工程が一括して行われる。 First, a large-format substrate on which a large number of insulating substrates 1 are taken is prepared. The large-format substrate is provided with a primary dividing groove and a secondary dividing groove in a grid pattern in advance, and each of the squares divided by both dividing grooves serves as a chip area for one piece. Although the large-format substrate 11A corresponding to one chip region is represented in FIGS. 3 and 4, each step described below with respect to the large-format substrate corresponding to a large number of chip regions is actually shown. Is done all at once.

すなわち、図3(a)と図4(a)に示すように、この大判基板11Aの裏面にAg系ペーストをスクリーン印刷した後、これを乾燥・焼成することにより、大判基板11Aの裏面に所定間隔を存して対向する一対の裏電極7を形成する。 That is, as shown in FIGS. 3 (a) and 4 (a), an Ag-based paste is screen-printed on the back surface of the large-format substrate 11A, and then dried and fired to determine on the back surface of the large-format substrate 11A. A pair of back electrodes 7 facing each other with a gap are formed.

次に、大判基板11Aの表面にPdを5〜40質量%含有するAg系ペーストをスクリーン印刷した後、これを乾燥・焼成することにより、図3(b)と図4(b)に示すように、大判基板11Aの表面に一対の表電極2と中間電極3を同時に形成する。これら表電極2は一対の裏電極7に対応する位置に形成され、中間電極3は一対の表電極2の中間位置に形成される。なお、これら表電極2および中間電極3と前述した裏電極7とは順序を逆に形成しても良く、あるいは両者を同時に形成しても良い。 Next, an Ag-based paste containing 5 to 40% by mass of Pd was screen-printed on the surface of the large-format substrate 11A, and then dried and fired as shown in FIGS. 3 (b) and 4 (b). In addition, a pair of surface electrodes 2 and intermediate electrodes 3 are simultaneously formed on the surface of the large-format substrate 11A. These front electrodes 2 are formed at positions corresponding to the pair of back electrodes 7, and the intermediate electrodes 3 are formed at intermediate positions of the pair of front electrodes 2. The front electrode 2 and the intermediate electrode 3 and the back electrode 7 described above may be formed in the reverse order, or both may be formed at the same time.

次に、大判基板11Aの表面にAgペーストをスクリーン印刷して乾燥・焼成することにより、図3(c)と図4(c)に示すように、両端部が中間電極3と図示右側の表電極2に接続する硫化検出導体5を形成する。また、これに前後して、大判基板11Aの表面に酸化ルテニウム等の抵抗体ペーストをスクリーン印刷して乾燥・焼成することにより、両端部が中間電極3と図示左側の表電極2に接続する抵抗体4を形成する。 Next, by screen-printing the Ag paste on the surface of the large-format substrate 11A, drying and firing, both ends are the intermediate electrode 3 and the table on the right side of the drawing as shown in FIGS. 3 (c) and 4 (c). The sulfide detection conductor 5 connected to the electrode 2 is formed. Around this time, a resistor paste such as ruthenium oxide is screen-printed on the surface of the large-format substrate 11A, dried and fired to connect both ends to the intermediate electrode 3 and the surface electrode 2 on the left side of the drawing. Form body 4.

なお、図示はしていないが、抵抗体4を形成した後、ガラスペーストをスクリーン印刷して乾燥・焼成することにより、抵抗体4を覆うガラスコート層を形成し、このガラスコート層の上から抵抗体4にトリミング溝4aを形成して抵抗値調整する。その際、抵抗体4の両端部に接続する表電極2と中間電極3に検出プローブを当接させた状態で抵抗体4の抵抗値を測定することができ、抵抗体4の抵抗値測定に硫化検出導体5の抵抗値成分が関与しなくなるため、抵抗体4の抵抗値調整を高精度に行うことができる。 Although not shown, after forming the resistor 4, the glass paste is screen-printed, dried and fired to form a glass coat layer covering the resistor 4 from above the glass coat layer. A trimming groove 4a is formed in the resistor 4 to adjust the resistance value. At that time, the resistance value of the resistor 4 can be measured in a state where the detection probe is in contact with the surface electrode 2 and the intermediate electrode 3 connected to both ends of the resistor 4, and the resistance value of the resistor 4 can be measured. Since the resistance value component of the sulfide detection conductor 5 is not involved, the resistance value adjustment of the resistor 4 can be performed with high accuracy.

次に、大判基板11Aの表面側にエポキシ系樹脂ペーストをスクリーン印刷して加熱硬化することにより、図3(d)と図4(d)に示すように、抵抗体4および中間電極3の全体と硫化検出導体5の一部を覆う保護膜6を形成する。なお、硫化検出導体5の両端部を除く大部分は保護膜6で覆われずに外部に露出しており、この露出部分が硫化検出部5aとなる。 Next, the epoxy resin paste was screen-printed on the surface side of the large-format substrate 11A and heat-cured to cure the entire resistor 4 and the intermediate electrode 3 as shown in FIGS. 3 (d) and 4 (d). And a protective film 6 that covers a part of the sulfide detection conductor 5 is formed. Most of the sulfurization detection conductor 5 except both ends is exposed to the outside without being covered with the protective film 6, and this exposed portion becomes the sulfurization detection portion 5a.

次に、大判基板11Aを一次分割溝に沿って短冊状基板11Bに1次分割した後、短冊状基板11Bの分割面にNi/Crをスパッタすることにより、図3(e)と図4(e)に示すように、短冊状基板11Bの両端部に表電極2と裏電極7間を接続する端面電極8を形成する。 Next, the large-format substrate 11A is first divided into strip-shaped substrates 11B along the primary dividing groove, and then Ni / Cr is sputtered on the divided surfaces of the strip-shaped substrate 11B to show FIGS. 3 (e) and 4 (e). As shown in e), end face electrodes 8 for connecting the front electrode 2 and the back electrode 7 are formed at both ends of the strip-shaped substrate 11B.

次に、短冊状基板11Bを二次分割溝に沿って複数のチップ状基板11Cに2次分割した後、これらチップ状基板11Cに対して電解メッキを施してNi−Snメッキ層を形成する。これにより、図3(f)と図4(f)に示すように、チップ状基板11Cの両端部に表電極2と裏電極7および端面電極8の表面を覆う外部電極9が形成され、図1,2に示す硫化検出センサ10が完成する。 Next, the strip-shaped substrate 11B is secondarily divided into a plurality of chip-shaped substrates 11C along the secondary dividing groove, and then the chip-shaped substrates 11C are electrolytically plated to form a Ni—Sn plating layer. As a result, as shown in FIGS. 3 (f) and 4 (f), external electrodes 9 covering the surfaces of the front electrode 2, the back electrode 7, and the end face electrode 8 are formed at both ends of the chip-shaped substrate 11C. The sulfurization detection sensor 10 shown in 1 and 2 is completed.

このように構成された硫化検出センサ10は、他の電子部品と共に図示せぬ回路基板上に実装された後、該回路基板を硫化ガスを含む雰囲気に曝すことで使用される。そして、時間経過に伴って硫化検出導体5を構成するAgの体積が減少していくと、一対の表電極2間の抵抗値が上昇していき、最終的には硫化検出導体5の硫化検出部5aが断線する。その際、硫化検出導体5に抵抗体4が直列に接続されており、この抵抗体4によって硫化検出導体5に流れる電流が制限されるため、膜厚の薄くなった硫化検出導体5の発熱が抑制され、硫化検出導体5が断線する際に爆ぜることを防止できる。 The sulfurization detection sensor 10 configured in this way is used by mounting the circuit board together with other electronic components on a circuit board (not shown) and then exposing the circuit board to an atmosphere containing sulfur gas. Then, as the volume of Ag constituting the sulfurization detection conductor 5 decreases with the passage of time, the resistance value between the pair of surface electrodes 2 increases, and finally the sulfurization detection of the sulfurization detection conductor 5 The part 5a is disconnected. At that time, the resistor 4 is connected in series to the sulfurization detection conductor 5, and the current flowing through the sulfurization detection conductor 5 is limited by the resistor 4, so that the sulfurization detection conductor 5 having a thin film thickness generates heat. It is suppressed, and it is possible to prevent the sulfurization detection conductor 5 from exploding when the wire is broken.

以上説明したように、第1実施形態例に係る硫化検出センサ10では、硫化検出導体5に抵抗体4が直列に接続されており、この抵抗体4によって硫化検出導体5に流れる電流が制限されるため、硫化検出導体5が断線する際に爆ぜることを防止できる。しかも、硫化検出導体5と抵抗体4との間に中間電極3が介設され、この中間電極3が銀にパラジウムを5〜40質量%含有する材料で形成されているため、中間電極3によって硫化検出導体5の銀が抵抗体4側に拡散してしまうことを抑制でき、直列に接続した抵抗体4が硫化検出導体5の検出精度に悪影響を及ぼすことを防止できる。なお、中間電極3におけるパラジウムの含有量が5質量%未満であると、銀の拡散を抑制する効果が不十分になってしまい、パラジウムの含有量が40質量%を超えると、抵抗値が高くなり過ぎてしまい好ましくない。 As described above, in the sulfurization detection sensor 10 according to the first embodiment, the resistor 4 is connected in series to the sulfurization detection conductor 5, and the current flowing through the sulfurization detection conductor 5 is limited by the resistor 4. Therefore, it is possible to prevent the sulfurization detection conductor 5 from exploding when the wire is broken. Moreover, since the intermediate electrode 3 is interposed between the sulfide detection conductor 5 and the resistor 4, and the intermediate electrode 3 is made of a material containing 5 to 40% by mass of palladium in silver, the intermediate electrode 3 is used. It is possible to prevent the silver of the sulfide detection conductor 5 from diffusing toward the resistor 4, and prevent the resistors 4 connected in series from adversely affecting the detection accuracy of the sulfide detection conductor 5. If the content of palladium in the intermediate electrode 3 is less than 5% by mass, the effect of suppressing the diffusion of silver becomes insufficient, and if the content of palladium exceeds 40% by mass, the resistance value is high. It is not preferable because it becomes too much.

また、第1実施形態例に係る硫化検出センサ10では、硫化検出導体5に直列に接続した抵抗体4に抵抗値調整用のトリミング溝4aが形成されており、このトリミング溝4aを含めた抵抗体4全体が保護膜6によって覆われているため、抵抗体4の抵抗値を調整する際に、抵抗体4の両端部に接続する表電極2と中間電極3に検出プローブを当接させた状態で抵抗値を測定することができる。したがって、抵抗体4の抵抗値測定に硫化検出導体5の抵抗値成分が関与しなくなり、抵抗体4の抵抗値調整を高精度に行うことができる。 Further, in the sulfide detection sensor 10 according to the first embodiment, a trimming groove 4a for adjusting the resistance value is formed in the resistor 4 connected in series with the sulfide detection conductor 5, and the resistance including the trimming groove 4a. Since the entire body 4 is covered with the protective film 6, when adjusting the resistance value of the resistor 4, the detection probe is brought into contact with the surface electrode 2 and the intermediate electrode 3 connected to both ends of the resistor 4. The resistance value can be measured in the state. Therefore, the resistance value component of the sulfurization detection conductor 5 is no longer involved in the resistance value measurement of the resistor 4, and the resistance value adjustment of the resistor 4 can be performed with high accuracy.

図5は本発明の第2実施形態例に係る硫化検出センサ20の平面図、図6は図5のVI−VI線に沿う断面図であり、図1と図2に対応する部分には同一符号を付してある。 5 is a plan view of the sulfurization detection sensor 20 according to the second embodiment of the present invention, FIG. 6 is a cross-sectional view taken along the line VI-VI of FIG. 5, and the parts corresponding to FIGS. 1 and 2 are the same. It is coded.

図5と図6に示すように、第2実施形態例に係る硫化検出センサ20では、中間電極3が保護膜6によって覆われていない露出部を有しており、該露出部に外部接続層21が形成されている。この外部接続層21はNiメッキ層上にSnメッキ層を積層した2層構造からなり、外部接続層21と一対の外部電極9を同時に形成可能となっている。外部接続層21はワイヤボンディング用の接続部(ボンディング電極)として使用することができるため、硫化検出センサ20は、立体的な配線構造を有する回路基板に半田付けとワイヤボンディングとを併用して実装可能となっている。具体的には、一対の外部電極9を回路基板上の任意の配線パターンに半田付けし、外部接続層21と回路基板上の他の配線パターンにワイヤの両端部を固着すれば良い。 As shown in FIGS. 5 and 6, in the sulfurization detection sensor 20 according to the second embodiment, the intermediate electrode 3 has an exposed portion not covered by the protective film 6, and the exposed portion has an external connection layer. 21 is formed. The external connection layer 21 has a two-layer structure in which a Sn plating layer is laminated on a Ni plating layer, and the external connection layer 21 and a pair of external electrodes 9 can be formed at the same time. Since the external connection layer 21 can be used as a connection portion (bonding electrode) for wire bonding, the sulfurization detection sensor 20 is mounted on a circuit board having a three-dimensional wiring structure by using both soldering and wire bonding. It is possible. Specifically, the pair of external electrodes 9 may be soldered to an arbitrary wiring pattern on the circuit board, and both ends of the wire may be fixed to the external connection layer 21 and other wiring patterns on the circuit board.

また、第2実施形態例に係る硫化検出センサ20では、硫化検出導体5を覆うように硫化ガス透過性の保護膜22が形成されており、硫化ガスが保護膜22を透過して硫化検出導体5に接するようになっている。このように硫化検出導体5を保護膜22で覆う構成とした場合でも、硫化検出導体5に流れる電流が抵抗体4によって制限されるため、硫化に伴って膜厚の薄くなった硫化検出導体5の発熱が抑制され、硫化検出導体5の発熱によって保護膜22の硫化ガス透過性が低下してしまうことを防止できる。なお、第2実施形態例に係る硫化検出センサ20において、硫化検出導体5を覆っている保護膜22を省略し、第1実施形態例と同様に、硫化検出導体5が外部に露出する硫化検出部を有する構成としても良い。 Further, in the sulfurization detection sensor 20 according to the second embodiment, a sulfurization gas permeable protective film 22 is formed so as to cover the sulfurization detection conductor 5, and the sulfurization gas permeates the protective film 22 to penetrate the sulfurization detection conductor. It comes in contact with 5. Even when the sulfurization detection conductor 5 is covered with the protective film 22 in this way, the current flowing through the sulfurization detection conductor 5 is limited by the resistor 4, so that the sulfurization detection conductor 5 becomes thinner due to sulfurization. It is possible to prevent the heat generation of the protective film 22 from being lowered due to the heat generation of the sulfurization detection conductor 5. In the sulfurization detection sensor 20 according to the second embodiment, the protective film 22 covering the sulfurization detection conductor 5 is omitted, and the sulfurization detection conductor 5 is exposed to the outside as in the first embodiment. It may have a structure having a part.

図7は本発明の第3実施形態例に係る硫化検出センサ30の平面図であり、図1と図2に対応する部分には同一符号を付してある。 FIG. 7 is a plan view of the sulfurization detection sensor 30 according to the third embodiment of the present invention, and the parts corresponding to FIGS. 1 and 2 are designated by the same reference numerals.

図7に示すように、第3実施形態例に係る硫化検出センサ30では、抵抗体4の全体を覆う保護膜6Aと、中間電極3と硫化検出導体5の接続部を覆う保護膜6Bと、硫化検出導体5と表電極2の接続部を覆う保護膜6Cとを備えており、保護膜6Aと保護膜6Bで挟まれた中間電極3の表面に外部接続層21が形成されている。ここで、左側の保護膜6Aと右側の保護膜6Cが真ん中の保護膜6Bを対称軸として対称形状に形成されているため、大判基板を1次分割して得られる短冊状基板の分割面に端面電極8をスパッタして形成する際、複数の短冊状基板を安定した姿勢で重ね合わせることができる。 As shown in FIG. 7, in the sulfurization detection sensor 30 according to the third embodiment, the protective film 6A covering the entire resistor 4 and the protective film 6B covering the connection portion between the intermediate electrode 3 and the sulfurization detection conductor 5 are used. A protective film 6C that covers the connection portion between the sulfide detection conductor 5 and the surface electrode 2 is provided, and an external connection layer 21 is formed on the surface of the intermediate electrode 3 sandwiched between the protective film 6A and the protective film 6B. Here, since the protective film 6A on the left side and the protective film 6C on the right side are formed in a symmetrical shape with the protective film 6B in the middle as the axis of symmetry, the divided surface of the strip-shaped substrate obtained by primary division of the large-format substrate When the end face electrode 8 is formed by sputtering, a plurality of strip-shaped substrates can be superposed in a stable posture.

1 絶縁基板
2 表電極
3 中間電極
4 抵抗体
5 硫化検出導体
5a 硫化検出部
6,6A,6B,6C 硫化ガス非透過性の保護膜
7 裏電極
8 端面電極
9 外部電極
10,20,30 硫化検出センサ
11A 大判基板
11B 短冊状基板
11C チップ状基板
21 外部接続層
22 硫化ガス透過性の保護膜
1 Insulated substrate 2 Front electrode 3 Intermediate electrode 4 Resistor 5 Sulfurization detection conductor 5a Sulfurization detection unit 6,6A, 6B, 6C Sulfurized gas impermeable protective film 7 Back electrode 8 End face electrode 9 External electrode 10, 20, 30 Sulfurization Detection sensor 11A Large format board 11B Strip-shaped board 11C Chip-shaped board 21 External connection layer 22 Sulfurized gas permeable protective film

Claims (3)

直方体形状の絶縁基板と、前記絶縁基板の主面における両端部に形成された一対の表電極と、一対の前記表電極間に形成された中間電極と、前記中間電極と一方の前記表電極との間に形成された抵抗体と、前記中間電極と他方の前記表電極との間に形成された硫化検出導体と、少なくとも前記抵抗体を覆う硫化ガス非透過性の保護膜と、を備え、
硫化検出導体が銀からなると共に、前記表電極と前記中間電極が銀にパラジウムを5〜40質量%含有する材料からなることを特徴とする硫化検出センサ。
A rectangular-shaped insulating substrate, a pair of surface electrodes formed on both ends of the main surface of the insulating substrate, an intermediate electrode formed between the pair of the table electrodes, the intermediate electrode and one of the surface electrodes. A sulfide detection conductor formed between the intermediate electrode and the other surface electrode, and at least a sulfide gas impermeable protective film covering the resistor are provided.
A sulfurization detection sensor, wherein the sulfurization detection conductor is made of silver, and the front electrode and the intermediate electrode are made of a material containing 5 to 40% by mass of palladium in silver.
請求項1に記載の硫化検出センサにおいて、
前記中間電極は前記保護膜から露出する露出部を有し、該露出部に外部接続層が形成されていることを特徴とする硫化検出センサ。
In the sulfurization detection sensor according to claim 1,
A sulfurization detection sensor characterized in that the intermediate electrode has an exposed portion exposed from the protective film, and an external connection layer is formed on the exposed portion.
請求項1に記載の硫化検出センサにおいて、
前記抵抗体に抵抗値調整用のトリミング溝が形成されており、該トリミング溝を含めて前記抵抗体の全体が前記保護膜で覆われていることを特徴とする硫化検出センサ。
In the sulfurization detection sensor according to claim 1,
A sulfurization detection sensor characterized in that a trimming groove for adjusting a resistance value is formed in the resistor, and the entire resistor including the trimming groove is covered with the protective film.
JP2019125515A 2019-07-04 2019-07-04 Sulfuration detection sensor Pending JP2021012067A (en)

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