WO2020082449A1 - Method for mapping table corresponding to logical position of management host in flash memory storage - Google Patents

Method for mapping table corresponding to logical position of management host in flash memory storage Download PDF

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WO2020082449A1
WO2020082449A1 PCT/CN2018/115510 CN2018115510W WO2020082449A1 WO 2020082449 A1 WO2020082449 A1 WO 2020082449A1 CN 2018115510 W CN2018115510 W CN 2018115510W WO 2020082449 A1 WO2020082449 A1 WO 2020082449A1
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segment
flash memory
mapping table
memory
memory storage
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PCT/CN2018/115510
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French (fr)
Chinese (zh)
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黄中柱
李庭育
魏智汎
张盛豪
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江苏华存电子科技有限公司
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/061Improving I/O performance
    • G06F3/0611Improving I/O performance in relation to response time
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0628Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0668Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671In-line storage system
    • G06F3/0673Single storage device
    • G06F3/0679Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]

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  • the invention relates to the technical field of managing the mapping table corresponding to the logical position of the host end in the flash memory storage, in particular to a method for managing the mapping table corresponding to the logical position of the host end in the flash memory storage.
  • Flash memory is a long-life non-volatile memory (which can retain the stored data information in the event of a power failure). Data deletion is not in a single byte but in fixed blocks As a unit (note: NOR Flash is byte storage.), The block size is generally 256KB to 20MB. Flash memory is a variant of electronically erasable read-only memory (EEPROM). The difference between flash memory and EEPROM is that EEPROM can be deleted and rewritten at the byte level instead of the entire chip erase, and most of the chips of flash memory require block erase except. Because it can still save data when the power is off, flash memory is usually used to save setting information, such as saving information in the computer's BIOS (basic program), PDA (personal digital assistant), digital camera, etc.
  • BIOS basic program
  • PDA personal digital assistant
  • the flash memory storage device needs to have a function of logical position corresponding to the physical position. With the current technology, the corresponding position is managed through a mapping table of the logical position corresponding to the physical position. This table will be placed in the memory of the flash storage device to operate.
  • the memory capacity required to record the entire logical position corresponding to the physical location mapping table is greater, and the current technology will cut the table into n segments according to the memory size, such as memory available
  • the space is 1024 bytes. If the size of the mapping table that records the entire flash storage device is 8192 bytes, the entire mapping table is divided into 8 segments, which are a to h.
  • NOR type and NAND type flash memory are very different.
  • NOR type flash memory is more like a single-chip flash memory, with separate address lines and data lines, but the price is more expensive and the capacity is relatively small; while NAND type is more like a hard disk, The address line and the data line are shared I / O lines. All information similar to the hard disk is transmitted through a single hard disk line, and compared with the NOR type flash memory, the NAND type has a lower cost and a much larger capacity. Therefore, NOR flash memory is more suitable for frequent random reads and writes. It is usually used to store program code and run directly in flash memory. Mobile phones are large users of NOR flash memory, so the "memory" capacity of mobile phones is usually not large; It is mainly used to store data.
  • NAND flash memory As mentioned earlier, the operation method of NAND flash memory is inefficient. This is related to its architectural design and interface design. It really operates like a hard disk (in fact, NAND flash memory did consider the compatibility with the hard disk at the beginning of the design), it The performance characteristics are also very similar to hard disks: the operation speed of small data blocks is very slow, while the speed of large data blocks is very fast, this difference is much larger than other storage media. This performance feature is very worthy of our attention.
  • Flash memory access is relatively fast, no noise, and small heat dissipation.
  • the demand for user space capacity is small. If you plan to purchase, you can not consider too much, and buy flash memory for the same storage space. If you need a large capacity (such as 500G), buy a hard disk, which is cheaper and can meet the needs of user applications.
  • segment order related to the host data is: segment a-> segment c-> segment a-> segment d has been repeatedly looped, so the operation process will become segment a written to flash memory, from Read segment c from flash memory, then write segment c to flash memory, read segment a from flash memory, then write segment a to flash memory, then read segment d to memory, and repeat This will increase the number of flash memory reads and writes and reduce the execution efficiency of the storage device.
  • An object of the present invention is to provide a method for accelerating the execution speed of a storage device and reducing the number of writes and reads of a flash memory, thereby improving the execution efficiency. Problems raised in technology.
  • a method for managing a mapping table corresponding to a logical position on a host side in a flash memory storage includes the following steps:
  • the hit rate of the confirmed segment is +1;
  • the flash memory in step A is provided with a single chip microcomputer, a flash memory controller, an input and output control module, a storage unit array and a pre-charging unit.
  • the management host in the flash storage in step A includes a CPU module, a reading unit, an execution controller, an input and output controller, a cache, a data converter, and a mapping table.
  • the memory storage in the step C includes a mapping table.
  • the mapping table includes 2 segments and a hit rate mechanism.
  • the segment and the hit rate mechanism are provided with a calculator and an identification module, and each segment includes 1024 byte.
  • the capacity of the mapping table pair is 8192 bytes.
  • the rate mechanism determines the method of replacing segments, reads the segment corresponding to the host data from the flash memory and puts it into the memory, which greatly improves the execution efficiency.
  • FIG. 1 is a schematic diagram of the segmentation sequence related to host data of the present invention
  • FIG. 2 is a schematic diagram of storing two segments in the memory of the present invention
  • FIG. 3 is a flowchart of a method for determining replacement segments by adding multiple segment contents in the memory of the present invention and a hit rate mechanism.
  • the present invention provides a technical solution: a method for managing the mapping table corresponding to the logical position of the host side in the flash storage: including the following steps:
  • the hit rate of the confirmed segment is +1;
  • Confirm that the segment corresponding to the management host data in the flash storage is provided on the flash storage including a microcontroller, flash controller, input and output control module, storage unit array and pre-charging unit.
  • Fetch unit execution controller, input and output controller, cache, data converter, mapping table.
  • the hit rate of the confirmed segment is +1, and it is confirmed whether the segment exists in the memory.
  • the memory storage includes a mapping table.
  • the capacity of the mapping table pair is 8192 bytes.
  • the mapping table includes 2 segments and the hit rate mechanism. , Segment and hit rate mechanism are equipped with calculator and recognition module, each segment includes 1024 bytes.
  • segment a-> segment c-> segment a-> segment d has been repeatedly looped, so the operation process will become segment a written to flash memory, from Read segment c from flash memory, then write segment c to flash memory, read segment a from flash memory, then write segment a to flash memory, then read segment d to memory, and repeat This will increase the number of flash memory reads and writes, which will greatly reduce the execution efficiency of the storage device.
  • the method of managing the mapping table corresponding to the logical position of the host side first confirms the segment corresponding to the host data, and then obtains the hit rate of this segment +1. After calculation, it is judged whether the corresponding segment exists in the memory. The corresponding segment, then read the segment corresponding to the host data from the flash memory and put it into the memory, if there is no corresponding segment in the memory, then it will judge whether to write the memory segment back to the flash memory, the memory Corresponding segments that do not exist in the system, determine the segments that are written back to the flash memory based on the hit rate, and finally read the segments corresponding to the host data from the flash memory and put them in memory to output the results.
  • the invention speeds up the execution speed of the storage device, and reduces the number of writing and reading of the flash memory, placing multiple segmented contents in the memory plus the hit rate mechanism To determine the method of replacing the segments, read the segments corresponding to the host data from the flash memory and put them into the memory to greatly improve the execution efficiency.
  • the rate mechanism determines the method of replacing segments, reads the segment corresponding to the host data from the flash memory and puts it into the memory, which greatly improves the execution efficiency.

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  • Human Computer Interaction (AREA)
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Abstract

A method for a mapping table corresponding to the logical position of a management host in a flash memory storage, comprising the following steps: A, confirming a segment corresponding to data of a management host in a flash memory storage; B, adding 1 to the hit rate of the confirmed segment; C, confirming whether the segment is present in a memory; D, confirming whether to write the segment back into the flash memory; E, according to the hit rate, determining a segment to be written back into the flash memory. The described method proposes to store two segments in a memory, determine according to the amplitude of the related hit rates of the segments which segment to write back into a flash memory, and read from the flash memory a segment corresponding to data of a host and place the segment in the memory when determined that the segment is present in the memory, or determine a segment that is written back into the flash memory according to the hit rate, read from the flash memory a segment corresponding to data of a host and place the segment in the memory when determined that the segment is not present in the memory, thereby greatly improving the efficiency of execution.

Description

一种闪存存储中管理主机端逻辑位置对应映射表的方法Method for managing mapping table corresponding to logical position of host end in flash memory storage 技术领域Technical field
本发明涉及闪存存储中管理主机端逻辑位置对应映射表技术领域,具体为一种闪存存储中管理主机端逻辑位置对应映射表的方法。The invention relates to the technical field of managing the mapping table corresponding to the logical position of the host end in the flash memory storage, in particular to a method for managing the mapping table corresponding to the logical position of the host end in the flash memory storage.
背景技术Background technique
闪存(Flash Memory)是一种长寿命的非易失性(在断电情况下仍能保持所存储的数据信息)的存储器,数据删除不是以单个的字节为单位而是以固定的区块为单位(注意:NOR Flash为字节存储。),区块大小一般为256KB到20MB。闪存是电子可擦除只读存储器(EEPROM)的变种,闪存与EEPROM不同的是,EEPROM能在字节水平上进行删除和重写而不是整个芯片擦写,而闪存的大部分芯片需要块擦除。由于其断电时仍能保存数据,闪存通常被用来保存设置信息,如在电脑的BIOS(基本程序)、PDA(个人数字助理)、数码相机中保存资料等。Flash memory (Flash) is a long-life non-volatile memory (which can retain the stored data information in the event of a power failure). Data deletion is not in a single byte but in fixed blocks As a unit (note: NOR Flash is byte storage.), The block size is generally 256KB to 20MB. Flash memory is a variant of electronically erasable read-only memory (EEPROM). The difference between flash memory and EEPROM is that EEPROM can be deleted and rewritten at the byte level instead of the entire chip erase, and most of the chips of flash memory require block erase except. Because it can still save data when the power is off, flash memory is usually used to save setting information, such as saving information in the computer's BIOS (basic program), PDA (personal digital assistant), digital camera, etc.
一个闪存中有n个块,一个块中包含n个页。当页被写入资料后,除非对包含这个页的块做抹除动作,否则不能再次写入此页。闪存具有同一个位置不可重复被写入的特性。也因为闪存拥有此特性,闪存存储装置中需要有逻辑位置对应实体位置的功能,以目前的技术,会透过一份逻辑位置对应实体位置的映射表来管理对应的位置。此表会放置在闪存存储装置的内存中来操作。There are n blocks in one flash memory, and there are n pages in one block. After a page is written with data, it cannot be written to this page again unless the block containing this page is erased. The flash memory has the characteristic that the same location cannot be written repeatedly. Because the flash memory has this feature, the flash memory storage device needs to have a function of logical position corresponding to the physical position. With the current technology, the corresponding position is managed through a mapping table of the logical position corresponding to the physical position. This table will be placed in the memory of the flash storage device to operate.
随着闪存存储装置的容量越来越大,记录整份逻辑位置对应实体位置的映射表所需要的内存容量就越大,目前技术会根据内存大小把表切割成n个分段,譬如内存可用空间为1024个字节,假如记录整 个闪存存储装置的映射表大小为8192个字节,这样就把整份映射表分成8个分段,分别是a~h。As the capacity of the flash memory storage device becomes larger and larger, the memory capacity required to record the entire logical position corresponding to the physical location mapping table is greater, and the current technology will cut the table into n segments according to the memory size, such as memory available The space is 1024 bytes. If the size of the mapping table that records the entire flash storage device is 8192 bytes, the entire mapping table is divided into 8 segments, which are a to h.
NOR型与NAND型闪存的区别很大,打个比方说,NOR型闪存更像单片机闪存内存,有独立的地址线和数据线,但价格比较贵,容量比较小;而NAND型更像硬盘,地址线和数据线是共用的I/O线,类似硬盘的所有信息都通过一条硬盘线传送一般,而且NAND型与NOR型闪存相比,成本要低一些,而容量大得多。因此,NOR型闪存比较适合频繁随机读写的场合,通常用于存储程序代码并直接在闪存内运行,手机就是使用NOR型闪存的大户,所以手机的“内存”容量通常不大;NAND型闪存主要用来存储资料,我们常用的闪存产品,如闪存盘、数码存储卡都是用NAND型闪存。这里我们还需要端正一个概念,那就是闪存的速度其实很有限,它本身操作速度、频率就比内存低得多,而且NAND型闪存类似硬盘的操作方式效率也比内存的直接访问方式慢得多。因此,不要以为闪存盘的性能瓶颈是在接口,甚至想当然地认为闪存盘采用USB2.0接口之后会获得巨大的性能提升。NOR type and NAND type flash memory are very different. For example, NOR type flash memory is more like a single-chip flash memory, with separate address lines and data lines, but the price is more expensive and the capacity is relatively small; while NAND type is more like a hard disk, The address line and the data line are shared I / O lines. All information similar to the hard disk is transmitted through a single hard disk line, and compared with the NOR type flash memory, the NAND type has a lower cost and a much larger capacity. Therefore, NOR flash memory is more suitable for frequent random reads and writes. It is usually used to store program code and run directly in flash memory. Mobile phones are large users of NOR flash memory, so the "memory" capacity of mobile phones is usually not large; It is mainly used to store data. Our commonly used flash memory products, such as flash disks and digital memory cards, use NAND flash memory. Here we also need to correct a concept, that is, the speed of flash memory is actually very limited, its operation speed and frequency are much lower than that of memory, and the operation method of NAND flash memory similar to hard disk is also much slower than the direct access method of memory . Therefore, don't think that the performance bottleneck of the flash disk is in the interface, and even assume that the flash disk will get a huge performance improvement after using the USB2.0 interface.
前面提到NAND型闪存的操作方式效率低,这和它的架构设计和接口设计有关,它操作起来确实挺像硬盘(其实NAND型闪存在设计之初确实考虑了与硬盘的兼容性),它的性能特点也很像硬盘:小数据块操作速度很慢,而大数据块速度就很快,这种差异远比其他存储介质大的多。这种性能特点非常值得我们留意。As mentioned earlier, the operation method of NAND flash memory is inefficient. This is related to its architectural design and interface design. It really operates like a hard disk (in fact, NAND flash memory did consider the compatibility with the hard disk at the beginning of the design), it The performance characteristics are also very similar to hard disks: the operation speed of small data blocks is very slow, while the speed of large data blocks is very fast, this difference is much larger than other storage media. This performance feature is very worthy of our attention.
闪存存取比较快速,无噪音,散热小。用户空间容量需求量小的,打算购置的话可以不考虑太多,同样存储空间买闪存。如果需要容量空间大的(如500G),就买硬盘,较为便宜,也可以满足用户应用的需求。Flash memory access is relatively fast, no noise, and small heat dissipation. The demand for user space capacity is small. If you plan to purchase, you can not consider too much, and buy flash memory for the same storage space. If you need a large capacity (such as 500G), buy a hard disk, which is cheaper and can meet the needs of user applications.
内存中只会保存主机数据相关的那个分段,其他分段存放在闪存。当内存中分段已经和现在主机数据不相关,需要把分段更新的内容存入闪存,并把相关的分段从闪存中取出放到内存。Only the segment related to the host data is stored in the memory, and the other segments are stored in the flash memory. When the segment in the memory is not related to the current host data, the updated content of the segment needs to be stored in the flash memory, and the relevant segment is taken out from the flash memory and put into the memory.
假如主机数据相关的分段顺序分别是:分段a->分段c->分段a->分段d一直反复循环,这样操作的流程就会变成分段a写入到闪存,从闪存中读取分段c,接着把分段c写入到闪存,把分段a从闪存中读取,再把分段a写入到闪存,接着把分段d读取到内存,一直反复进行,这样增加闪存读取写入的次数,降低存储装置的执行效率。If the segment order related to the host data is: segment a-> segment c-> segment a-> segment d has been repeatedly looped, so the operation process will become segment a written to flash memory, from Read segment c from flash memory, then write segment c to flash memory, read segment a from flash memory, then write segment a to flash memory, then read segment d to memory, and repeat This will increase the number of flash memory reads and writes and reduce the execution efficiency of the storage device.
发明内容Summary of the invention
本发明的目的在于提供一种加速存储装置的执行速度,并减少闪存的写入读取次数,从而提升执行效率的一种闪存存储中管理主机端逻辑位置对应映射表的方法,以解决上述背景技术中提出的问题。An object of the present invention is to provide a method for accelerating the execution speed of a storage device and reducing the number of writes and reads of a flash memory, thereby improving the execution efficiency. Problems raised in technology.
为实现上述目的,本发明提供如下技术方案:一种闪存存储中管理主机端逻辑位置对应映射表的方法:包括以下步骤:In order to achieve the above object, the present invention provides the following technical solution: A method for managing a mapping table corresponding to a logical position on a host side in a flash memory storage includes the following steps:
A、确认闪存存储中管理主机数据相对应的分段;A. Confirm the segment corresponding to the management host data in the flash storage;
B、确认后的分段的命中率+1;B. The hit rate of the confirmed segment is +1;
C、确认内存中是否存在此分段;C. Confirm whether this segment exists in the memory;
D、确认是否要把内存分段写回到闪存;D. Confirm whether to write the memory segment back to the flash memory;
E、根据命中率决定写回闪存的分段。E. Determine the segment to write back to the flash memory according to the hit rate.
优选的,所述步骤A闪存存储上设有,单片机,闪存控制器,输入输出控制模块,存储单元阵列和预充电单元。Preferably, the flash memory in step A is provided with a single chip microcomputer, a flash memory controller, an input and output control module, a storage unit array and a pre-charging unit.
优选的,所述步骤A闪存存储中管理主机上包括CPU模块,读 取单元,执行控制器,输入输出控制器,高速缓存,数据转换器,映射表。Preferably, the management host in the flash storage in step A includes a CPU module, a reading unit, an execution controller, an input and output controller, a cache, a data converter, and a mapping table.
优选的,所述步骤C内存存储中包括映射表,映射表上包括2个分段以及命中率机制,分段以及命中率机制上设有计算器与识别模块,每一个分段上包括1024个字节。Preferably, the memory storage in the step C includes a mapping table. The mapping table includes 2 segments and a hit rate mechanism. The segment and the hit rate mechanism are provided with a calculator and an identification module, and each segment includes 1024 byte.
优选的,所述映射表对的容量为8192个字节。Preferably, the capacity of the mapping table pair is 8192 bytes.
与现有技术相比,本发明的有益效果是:Compared with the prior art, the beneficial effects of the present invention are:
本发明为了提高存储装置中逻辑位置对应实体位置映射表的使用效率,加速存储装置的执行速度,并减少闪存的写入读取次数,提出了在内存中摆放多个分段内容加上命中率机制来决定替换分段的方法,从闪存中读取与主机数据相对应的分段并放到内存,大幅提升执行效率。In order to improve the use efficiency of the physical location mapping table corresponding to the logical position in the storage device, accelerate the execution speed of the storage device, and reduce the number of write and read times of the flash memory, it is proposed to place multiple segmented contents in the memory and hit The rate mechanism determines the method of replacing segments, reads the segment corresponding to the host data from the flash memory and puts it into the memory, which greatly improves the execution efficiency.
附图说明BRIEF DESCRIPTION
图1为本发明主机数据相关的分段顺序示意图;1 is a schematic diagram of the segmentation sequence related to host data of the present invention;
图2为本发明内存中存放两个分段示意图;2 is a schematic diagram of storing two segments in the memory of the present invention;
图3为本发明内存中多个分段内容加上命中率机制来决定替换分段的方法的流程图。FIG. 3 is a flowchart of a method for determining replacement segments by adding multiple segment contents in the memory of the present invention and a hit rate mechanism.
具体实施方式detailed description
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be described clearly and completely in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts fall within the protection scope of the present invention.
请参阅图1、图2或图3,本发明提供一种技术方案:一种闪存 存储中管理主机端逻辑位置对应映射表的方法:包括以下步骤:Please refer to FIG. 1, FIG. 2 or FIG. 3, the present invention provides a technical solution: a method for managing the mapping table corresponding to the logical position of the host side in the flash storage: including the following steps:
A、确认闪存存储中管理主机数据相对应的分段;A. Confirm the segment corresponding to the management host data in the flash storage;
B、确认后的分段的命中率+1;B. The hit rate of the confirmed segment is +1;
C、确认内存中是否存在此分段;C. Confirm whether this segment exists in the memory;
D、确认是否要把内存分段写回到闪存;D. Confirm whether to write the memory segment back to the flash memory;
E、根据命中率决定写回闪存的分段。E. Determine the segment to write back to the flash memory according to the hit rate.
确认闪存存储中管理主机数据相对应的分段,在闪存存储上设有,单片机,闪存控制器,输入输出控制模块,存储单元阵列和预充电单元,闪存存储中管理主机上包括CPU模块,读取单元,执行控制器,输入输出控制器,高速缓存,数据转换器,映射表。Confirm that the segment corresponding to the management host data in the flash storage is provided on the flash storage, including a microcontroller, flash controller, input and output control module, storage unit array and pre-charging unit. Fetch unit, execution controller, input and output controller, cache, data converter, mapping table.
确认后的分段的命中率+1,确认内存中是否存在此分段,内存存储中包括映射表,映射表对的容量为8192个字节,映射表上包括2个分段以及命中率机制,分段以及命中率机制上设有计算器与识别模块,每一个分段上包括1024个字节。The hit rate of the confirmed segment is +1, and it is confirmed whether the segment exists in the memory. The memory storage includes a mapping table. The capacity of the mapping table pair is 8192 bytes. The mapping table includes 2 segments and the hit rate mechanism. , Segment and hit rate mechanism are equipped with calculator and recognition module, each segment includes 1024 bytes.
内存中只会保存主机数据相关的那个分段,其他分段存放在闪存,当内存中分段已经和现在主机数据不相关,需要把分段更新的内容存入闪存,并把相关的分段从闪存中取出放到内存。Only the segment related to the host data is stored in the memory, and the other segments are stored in the flash memory. When the segment in the memory is not related to the current host data, the updated content of the segment needs to be stored in the flash memory, and the relevant segment Remove from flash memory and put in memory.
当主机数据相关的分段顺序分别是:分段a->分段c->分段a->分段d一直反复循环,这样操作的流程就会变成分段a写入到闪存,从闪存中读取分段c,接着把分段c写入到闪存,把分段a从闪存中读取,再把分段a写入到闪存,接着把分段d读取到内存,一直反复进行,这样增加闪存读取写入的次数,这样将会大大降低存储装置的执行效率。When the segment order related to the host data is: segment a-> segment c-> segment a-> segment d has been repeatedly looped, so the operation process will become segment a written to flash memory, from Read segment c from flash memory, then write segment c to flash memory, read segment a from flash memory, then write segment a to flash memory, then read segment d to memory, and repeat This will increase the number of flash memory reads and writes, which will greatly reduce the execution efficiency of the storage device.
确认是否要把内存分段写回到闪存,根据命中率决定写回闪存 的分段,假如是分段a->分段c->分段a->分段d一直反复循环这种状况,内存中先存放分段a,接着存放分段c,因为分段a在内存不需要从闪存中取出,接着是根据命中率把分段c写回到闪存中,然后把分段d读出放在内存。Confirm whether you want to write the memory segment back to the flash memory, and determine the segment to be written back to the flash memory according to the hit rate. If it is segment a-> segment c-> segment a-> segment d, the situation has been repeated repeatedly. First store segment a in memory, then store segment c, because segment a does not need to be taken out of flash memory in memory, then segment c is written back to flash according to the hit rate, and then segment d is read out In memory.
管理主机端逻辑位置对应映射表的方法,首先确认主机数据相对应的分段,然后得出此分段的命中率+1,经过计算后判断内存中是否存在相应的分段,如果内存中存在相应的分段,那么从闪存中读取与主机数据相对应的分段并放到内存,如果内存中不存在相应的分段,那么将判断是否要把内存分段写回到闪存,将内存中不存在的相应的分段,根据命中率决定写回闪存的分段,最后从闪存中读取与主机数据相对应的分段并放到内存,输出结果。The method of managing the mapping table corresponding to the logical position of the host side first confirms the segment corresponding to the host data, and then obtains the hit rate of this segment +1. After calculation, it is judged whether the corresponding segment exists in the memory. The corresponding segment, then read the segment corresponding to the host data from the flash memory and put it into the memory, if there is no corresponding segment in the memory, then it will judge whether to write the memory segment back to the flash memory, the memory Corresponding segments that do not exist in the system, determine the segments that are written back to the flash memory based on the hit rate, and finally read the segments corresponding to the host data from the flash memory and put them in memory to output the results.
本发明为了提高存储装置中逻辑位置对应实体位置映射表的使用效率,加速存储装置的执行速度,并减少闪存的写入读取次数,在内存中摆放多个分段内容加上命中率机制来决定替换分段的方法,从闪存中读取与主机数据相对应的分段并放到内存,大幅提升执行效率。In order to improve the use efficiency of the mapping table corresponding to the physical position of the logical position in the storage device, the invention speeds up the execution speed of the storage device, and reduces the number of writing and reading of the flash memory, placing multiple segmented contents in the memory plus the hit rate mechanism To determine the method of replacing the segments, read the segments corresponding to the host data from the flash memory and put them into the memory to greatly improve the execution efficiency.
本发明的有益效果是:The beneficial effects of the present invention are:
本发明为了提高存储装置中逻辑位置对应实体位置映射表的使用效率,加速存储装置的执行速度,并减少闪存的写入读取次数,提出了在内存中摆放多个分段内容加上命中率机制来决定替换分段的方法,从闪存中读取与主机数据相对应的分段并放到内存,大幅提升执行效率。In order to improve the use efficiency of the physical location mapping table corresponding to the logical position in the storage device, accelerate the execution speed of the storage device, and reduce the number of write and read times of the flash memory, it is proposed to place multiple segmented contents in the memory and hit The rate mechanism determines the method of replacing segments, reads the segment corresponding to the host data from the flash memory and puts it into the memory, which greatly improves the execution efficiency.
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附 权利要求及其等同物限定。Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, and substitutions can be made to these embodiments without departing from the principle and spirit of the present invention And variations, the scope of the invention is defined by the appended claims and their equivalents.

Claims (5)

  1. 一种闪存存储中管理主机端逻辑位置对应映射表的方法:包括以下步骤:A method for managing the mapping table corresponding to the logical position of the host side in the flash memory storage includes the following steps:
    A、确认闪存存储中管理主机数据相对应的分段;A. Confirm the segment corresponding to the management host data in the flash storage;
    B、确认后的分段的命中率+1;B. The hit rate of the confirmed segment is +1;
    C、确认内存中是否存在此分段;C. Confirm whether this segment exists in the memory;
    D、确认是否要把内存分段写回到闪存;D. Confirm whether to write the memory segment back to the flash memory;
    E、根据命中率决定写回闪存的分段。E. Determine the segment to write back to the flash memory according to the hit rate.
  2. 根据权利要求1所述的一种闪存存储中管理主机端逻辑位置对应映射表的方法,其特征在于:所述步骤A闪存存储上设有,单片机,闪存控制器,输入输出控制模块,存储单元阵列和预充电单元。The method for managing the mapping table corresponding to the logical position of the host side in the flash memory storage according to claim 1, characterized in that: in the step A, the flash memory storage is provided with a single chip microcomputer, a flash memory controller, an input and output control module, and a storage unit Array and pre-charge unit.
  3. 根据权利要求1所述的一种闪存存储中管理主机端逻辑位置对应映射表的方法,其特征在于:所述步骤A闪存存储中管理主机上包括CPU模块,读取单元,执行控制器,输入输出控制器,高速缓存,数据转换器,映射表。The method for managing the mapping table corresponding to the logical position of the host side in the flash memory storage according to claim 1, wherein the step A: the management host in the flash memory storage includes a CPU module, a reading unit, an execution controller, and an input Output controller, cache, data converter, mapping table.
  4. 根据权利要求1所述的一种闪存存储中管理主机端逻辑位置对应映射表的方法,其特征在于:所述步骤C内存存储中包括映射表,映射表上包括2个分段以及命中率机制,分段以及命中率机制上设有计算器与识别模块,每一个分段上包括1024个字节。A method for managing a mapping table corresponding to a logical location on a host side in a flash memory storage according to claim 1, wherein the memory storage in the step C includes a mapping table, and the mapping table includes 2 segments and a hit ratio mechanism , Segment and hit rate mechanism are equipped with calculator and recognition module, each segment includes 1024 bytes.
  5. 根据权利要求3所述的一种闪存存储中管理主机端逻辑位置对应映射表的方法,其特征在于:所述映射表对的容量为8192个字节。A method for managing a mapping table corresponding to a logical position on a host side in a flash memory storage according to claim 3, wherein the capacity of the mapping table pair is 8192 bytes.
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