WO2016186166A1 - Organic thin film solar cell module, electronic device and method for manufacturing organic thin film solar cell module - Google Patents

Organic thin film solar cell module, electronic device and method for manufacturing organic thin film solar cell module Download PDF

Info

Publication number
WO2016186166A1
WO2016186166A1 PCT/JP2016/064882 JP2016064882W WO2016186166A1 WO 2016186166 A1 WO2016186166 A1 WO 2016186166A1 JP 2016064882 W JP2016064882 W JP 2016064882W WO 2016186166 A1 WO2016186166 A1 WO 2016186166A1
Authority
WO
WIPO (PCT)
Prior art keywords
organic thin
solar cell
conductive layer
film solar
cell module
Prior art date
Application number
PCT/JP2016/064882
Other languages
French (fr)
Japanese (ja)
Inventor
陽一 青木
Original Assignee
ローム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2016099721A external-priority patent/JP6769739B2/en
Application filed by ローム株式会社 filed Critical ローム株式会社
Priority to US15/575,248 priority Critical patent/US20180138326A1/en
Publication of WO2016186166A1 publication Critical patent/WO2016186166A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B19/00—Indicating the time by visual means
    • G04B19/06—Dials
    • G—PHYSICS
    • G04—HOROLOGY
    • G04C—ELECTROMECHANICAL CLOCKS OR WATCHES
    • G04C10/00—Arrangements of electric power supplies in time pieces
    • G04C10/02—Arrangements of electric power supplies in time pieces the power supply being a radioactive or photovoltaic source
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to an organic thin film solar cell module, an electronic device, and a method for manufacturing an organic thin film solar cell module.
  • Patent Document 1 discloses a configuration including a photoelectric conversion layer made of an organic thin film, and a first conductive layer and a second conductive layer sandwiching the photoelectric conversion layer.
  • the first conductive layer is a transparent conductive layer such as ITO.
  • protrusions may be generated during the formation of the photoelectric conversion layer, or particles may adhere to the photoelectric conversion layer.
  • the shape of the second conductive layer may become distorted, and problems such as the entry of outside air may occur.
  • the solar cell has a photoelectric conversion function for converting light such as sunlight into electric power, and is being developed as a power generation means using so-called renewable energy.
  • Organic thin-film solar cells are a type of solar cell.
  • Patent Document 1 discloses a configuration including a photoelectric conversion layer made of an organic thin film, and a first conductive layer and a second conductive layer sandwiching the photoelectric conversion layer.
  • the first conductive layer is a transparent conductive layer such as ITO.
  • 34 to 36 of this document disclose an organic thin film solar cell having an opening. This opening is provided in order to express a display unit such as a liquid crystal display. For this reason, openings of the same shape and size are provided in the photoelectric conversion layer and the second electrode layer.
  • electronic devices are required to have a design such as a manufacturer, a product name, and characters and designs that are desirably displayed upon use.
  • a design such as a manufacturer, a product name, and characters and designs that are desirably displayed upon use.
  • additional members and materials are required, such as laminating a design plate with a design on the organic thin film solar cell module or printing on the organic thin film solar cell module.
  • Patent Document 1 discloses a configuration including a photoelectric conversion layer made of an organic thin film, and a first conductive layer and a second conductive layer sandwiching the photoelectric conversion layer.
  • the first conductive layer is a transparent conductive layer such as ITO.
  • a passivation film that protects the first conductive layer, the second conductive layer, and the photoelectric conversion layer is provided.
  • 34 to 36 of this document disclose an organic thin film solar cell having an opening. This opening is provided in order to express a display unit such as a liquid crystal display. For this reason, openings of the same shape and size are provided in the photoelectric conversion layer and the second electrode layer.
  • the opening described above is covered with the first conductive layer and the passivation film.
  • the opening has a light-transmitting property, but the first conductive layer and the passivation film are colored in the opening.
  • Patent Document 1 discloses a basic configuration of an organic thin film solar cell including a photoelectric conversion layer formed of an organic thin film and a first electrode layer and a second electrode layer sandwiching the photoelectric conversion layer.
  • an electronic device is required to have a design that can be visually recognized from the outside, such as a manufacturer name, a product name, characters, and a design, on the surface of the casing.
  • a design is generally applied to the surface of the casing by a technique such as printing, stamping, sticking a sticker, etc., but when organic thin-film solar cells are arranged in many areas of the casing surface, It would be convenient if the design could also be applied to the housing surface occupied by a simple organic thin film solar cell.
  • the above-described opening is covered with the first conductive layer and the passivation layer. If each of the first conductive layer and the passivation layer has a function to be performed, the opening has translucency, but the first conductive layer and the passivation layer are colored in the opening.
  • the organic thin film solar cell module it is required to increase the proportion of the photoelectric conversion layer that actually contributes to power generation.
  • the organic thin film solar cell module it is required to suppress a reduction in the proportion of the photoelectric conversion layer that actually contributes to power generation.
  • the present invention has been conceived under the circumstances described above, and provides an organic thin film solar cell module, an electronic device, and a method of manufacturing an organic thin film solar cell module capable of suppressing damage. Let that be the issue. It is another object of the present invention to provide an organic thin-film solar cell module and an electronic device that can express a design in appearance without requiring additional members. It is another object of the present invention to provide a method for producing an organic thin film solar cell module, an electronic device, and an organic thin film solar cell module having a more transparent surface. It is another object of the present invention to provide an organic thin-film solar cell capable of expressing the design on the appearance without requiring additional members.
  • An organic thin-film solar cell module provided by the first aspect of the present invention includes a transparent support substrate, a transparent first conductive layer laminated on the support substrate, a second conductive layer, and the first conductive layer. And a photoelectric conversion layer made of an organic thin film sandwiched between the second conductive layers, and the second conductive layer is thicker than the photoelectric conversion layer.
  • the first conductive layer has two first partition portions that are adjacent to each other through a substrate exposed region in which a part of the support substrate is exposed from the first conductive layer.
  • the second conductive layer has two second partition portions adjacent to each other with a part of the substrate exposed region in between, and the photoelectric conversion layer is one of the two adjacent ones in a plan view.
  • the photoelectric conversion layer connecting portion that overlaps both the first partition portion and the other second partition portion of the two adjacent ones has a photoelectric conversion layer penetration portion that penetrates in the thickness direction.
  • the photoelectric conversion layer has a protrusion surrounding the photoelectric conversion layer penetrating portion in a plan view, and the protrusion is covered with the second conductive layer.
  • one of the adjacent two first partition portions does not overlap with the photoelectric conversion layer connection portion in a plan view and overlaps with the second conductive layer.
  • One of the two adjacent sections has a second electrode portion that coincides with the first electrode portion in plan view, and the photoelectric conversion layer has the first electrode in plan view.
  • a photoelectric conversion layer power generation unit that coincides with the electrode unit and the second electrode unit is provided.
  • one of the two adjacent ones has a first connection portion that coincides with the photoelectric conversion layer connection portion in plan view
  • the two adjacent The other second partition portion has a second connection portion that coincides with the photoelectric conversion layer connection portion in plan view.
  • the photoelectric conversion layer penetrating portion has a circular shape in plan view.
  • the first connection part of the first partition part of one of the two adjacent parts is included in the photoelectric conversion layer penetrating part in a plan view and penetrates in the thickness direction. It has a 1st penetration part.
  • the inner end edge of the first penetrating portion is separated from the inner end edge of the photoelectric conversion layer penetrating portion in plan view.
  • the said 1st connection part of one said 1st division part of the said adjacent two is the said support substrate in the area
  • the first conductive layer is made of ITO.
  • the second conductive layer is made of metal.
  • the second conductive layer is made of Al.
  • a passivation layer covering the second conductive layer is provided.
  • the passivation layer is made of SiN or SiON.
  • An electronic device provided by the second aspect of the present invention includes an organic thin film solar cell module provided by the first aspect of the present invention, and a drive unit that is driven by power feeding from the organic thin film solar cell module. Prepare.
  • the method for producing an organic thin film solar cell module includes a step of laminating a transparent first conductive layer on a transparent support substrate, and photoelectric conversion comprising an organic thin film on the first conductive layer.
  • the second conductive layer is thicker than the photoelectric conversion layer.
  • a metal is laminated by a vapor deposition method.
  • the photoelectric conversion layer penetrating portion is covered with a second conductive layer.
  • the said photoelectric converting layer in the process of laminating
  • the photoelectric conversion layer penetrating portion is formed by an IR laser.
  • the first conductive layer is made of ITO.
  • the second conductive layer is made of metal.
  • the second conductive layer is made of Al.
  • the organic thin film solar cell module provided by the fourth aspect of the present invention includes a transparent first conductive layer, a second conductive layer, and an organic thin film sandwiched between the first conductive layer and the second conductive layer.
  • a photoelectric conversion layer, and the photoelectric conversion layer has one or more design display portions constituting a design that appears through the first conductive layer.
  • a transparent support substrate on which the first conductive layer is laminated is provided.
  • a passivation film that covers the second conductive layer is provided.
  • the passivation film covers the design display portion.
  • a portion covering the design display portion and a portion covering the portion adjacent to the design display portion in the photoelectric conversion layer are formed flat.
  • the passivation film is thicker than the photoelectric conversion layer.
  • a protective layer laminated on the passivation film is provided.
  • a bonding layer for bonding the passivation film and the protective layer is provided.
  • the first conductive layer is made of ITO.
  • the second conductive layer is made of metal.
  • the second conductive layer is made of Al.
  • the design display part is constituted by a penetrating part that penetrates the photoelectric conversion layer in the thickness direction.
  • the design display portion is constituted by a thin portion that is thinner than the surroundings.
  • the first conductive layer has a first electrode portion
  • the second conductive layer has a second electrode portion that coincides with the first electrode portion in plan view.
  • the photoelectric conversion layer has a power generation region that is sandwiched between the first electrode portion and the second electrode portion and contributes to power generation by exhibiting a photoelectric conversion function.
  • the photoelectric conversion layer has a non-power generation region that does not overlap the first electrode portion and the second electrode portion in a plan view and does not contribute to power generation.
  • the first conductive layer includes a first partition part that includes the design display part in a plan view and is surrounded by a slit penetrating in the thickness direction.
  • the non-power generation region of the photoelectric conversion layer has a partition region that is a region overlapping the first partition portion of the first conductive layer.
  • the first conductive layer and the second conductive layer are in contact with each other through the design display portion included in the partition region of the photoelectric conversion layer.
  • the first conductive layer has two first electrode portions adjacent to each other with a slit interposed therebetween, and the second conductive layer has the two first electrodes in a plan view.
  • the photoelectric conversion layer has two power generation regions sandwiched between the two first electrode portions and the two second electrode portions.
  • the two power generation regions are connected in series with each other.
  • the two power generation regions are connected in parallel to each other.
  • the first conductive layer is connected to one of the two first electrode portions and is adjacent to the other of the two first electrode portions with the slit interposed therebetween.
  • the second conductive layer is connected to the second electrode portion that coincides with the other of the two first electrode portions in a plan view, and is connected to the second electrode portion with the slit interposed therebetween.
  • a non-power generation area of the photoelectric conversion layer includes a communication area sandwiched between the first communication section and the second communication section, the second communication section being adjacent to one side and in contact with the first communication section. Including.
  • the communication area includes the design display part, and the first communication part and the second communication part are passed through the design display part included in the communication area. It touches.
  • the first conductive layer has a plurality of the first electrode portions and the first connecting portions arranged concentrically, and the second conductive layer has a concentric shape.
  • the photoelectric conversion layer includes a plurality of power generation regions and a plurality of communication regions arranged concentrically.
  • the first conductive layer extends from the first electrode portion of any one of the first electrode portions to the outside of the photoelectric conversion layer in a plan view. Has a protruding part.
  • the first conductive layer includes a slit formed between the first electrode portion connected to the first extension portion and the first electrode portion adjacent to the first electrode portion.
  • the photoelectric conversion layer includes the design display portion included in the first end portion in a plan view and has an end region that overlaps the first end portion.
  • the second conductive layer coincides with the first end portion in plan view and is connected to the adjacent second electrode portion, and is in contact with the first end portion through the design display portion in the end region.
  • the first conductive layer has a second extending portion that extends outward from the photoelectric conversion layer in a plan view from the first end portion.
  • the design display part included in the contact area represents a character for specifying time.
  • the design display part included in the partition area represents a character for specifying time.
  • the first conductive layer has an opening that encloses the design display portion in a plan view, and coincides with the opening of the first conductive layer in the photoelectric conversion layer.
  • the part to perform is the non-power generation region.
  • the design display part included in the opening represents a figure for specifying time.
  • An electronic device provided by the fifth aspect of the present invention includes an organic thin film solar cell module provided by the fourth aspect of the present invention, and a drive unit that is driven by power feeding from the organic thin film solar cell module. Prepare.
  • a long hand and a short hand driven by the drive unit are provided and configured as a timepiece.
  • the drive unit has a calculation function, and includes a display unit that displays a calculation result by the drive unit, and is configured as an electronic computer.
  • An organic thin film solar cell module provided by the sixth aspect of the present invention includes a transparent support substrate, a transparent first conductive layer laminated on the support substrate, a second conductive layer, and the first conductive layer. And a photoelectric conversion layer comprising an organic thin film sandwiched between the second conductive layers, and a passivation film covering the second conductive layer, the passivation film having a first edge, and the first end The support substrate is exposed in a region adjacent to the edge.
  • the first conductive layer has a third edge that coincides with the first edge in plan view.
  • the first conductive layer has a third inward retraction edge that retreats inward from the first end edge in plan view.
  • the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
  • the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
  • the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
  • the first edge is annular in plan view.
  • the third end edge is annular in plan view.
  • the third inward withdrawal edge is annular in plan view.
  • the fourth inward withdrawal edge is annular in plan view.
  • the fifth inward withdrawal edge is annular in plan view.
  • the first conductive layer is made of ITO.
  • the second conductive layer is made of metal.
  • the second conductive layer is made of Al.
  • the passivation film is made of SiN.
  • a protective resin layer is provided to cover the passivation film, and the protective resin layer has a second edge that coincides with the first edge in plan view.
  • the second end edge and the first end edge form a continuous surface.
  • the second edge is annular in plan view.
  • the protective resin layer is made of an ultraviolet curable resin.
  • the protective resin layer has a second outer edge located on the opposite side of the second edge with at least a part of the photoelectric conversion layer in plan view.
  • the passivation film has a first outer end edge that coincides with the second outer end edge in plan view, and the first conductive layer includes the second outer end edge and the first outer end edge. It has an extended portion that extends outward from the edge, covers at least a part of the extended portion, and includes a bypass conductive portion made of a material having a lower resistance than the material of the first conductive layer.
  • the second outer edge and the first outer edge form a continuous surface.
  • the bypass conductive portion covers the second outer end edge and the first outer end edge.
  • the bypass conductive portion contains Ag or carbon.
  • the second conductive layer has a fourth outer retraction edge that retreats inward from the second outer end edge and the first outer end edge in a plan view.
  • the photoelectric conversion layer has a second outer end edge and a fifth outer retreat edge that retreats inward from the first outer end edge in a plan view. .
  • An electronic device provided by the seventh aspect of the present invention includes an organic thin film solar cell module provided by the sixth aspect of the present invention, and a drive unit that is driven by power feeding from the organic thin film solar cell module. Prepare.
  • the organic thin film solar cell module manufacturing method provided by the eighth aspect of the present invention includes a step of laminating a transparent first conductive layer on a transparent support substrate, and photoelectric conversion comprising an organic thin film on the first conductive layer.
  • exposing the support substrate in a region adjacent to the second edge and the first edge by partially removing the first conductive layer.
  • a third edge that coincides with the second edge and the first edge in plan view is formed in the first conductive layer.
  • the second end edge and the first end edge are annular in plan view.
  • the third end edge is annular in plan view.
  • the first conductive layer is made of ITO.
  • the second conductive layer is made of metal.
  • the second conductive layer is made of Al.
  • the passivation film is made of SiN.
  • the protective resin layer is made of an ultraviolet curable resin.
  • a second outer end located on the opposite side of the second end edge across at least a part of the photoelectric conversion layer in plan view Forming a first edge, and forming a first outer edge on the passivation film that coincides with the second outer edge in plan view by partially removing the passivation film from the second edge as a boundary. And covering at least part of the second outer end edge and the first outer end edge of the first conductive layer, and extending at least a part of the first conductive layer. Forming a bypass conductive portion made of a material having a resistance lower than that of the material.
  • the bypass conductive portion in the step of forming the bypass conductive portion, covers the second outer end edge and the first outer end edge.
  • the bypass conductive portion contains Ag or carbon.
  • An organic thin-film solar cell provided by a ninth aspect of the present invention includes a transparent support substrate having a first surface and a second surface opposite to the first surface, and a transparent substrate disposed on the second surface side of the support substrate.
  • a second electrode layer, and the first electrode layer includes an opening on a surface thereof, and the opening represents a design on the first surface side of the support substrate.
  • the outer edge of the opening portion of the opening constitutes a part of the outer edge of the design to be represented.
  • the opening is formed as a set of dots having a predetermined shape in plan view.
  • the set of dodds constitutes a part of the design to be represented.
  • the opening is formed by arranging a plurality of lines having a predetermined width and extending in a predetermined direction at predetermined intervals.
  • the set of the plurality of lines constitutes a part of the design to be represented.
  • the opening generates a hologram when viewed from the outside of the first surface of the support substrate.
  • the plurality of lines as the openings have a width of 5 to 20 ⁇ m and are arranged at intervals of 30 to 50 ⁇ m.
  • the thickness of the first electrode layer other than the opening is 100 to 200 nm.
  • the opening is formed by recessing the first electrode layer by a predetermined depth from the surface opposite to the support substrate.
  • the opening is formed by recessing the first electrode layer by a predetermined depth from the surface on the support substrate side.
  • the removal depth of the opening is such that a thin portion having a thickness of 50 to 100 nm remains.
  • the opening is formed by penetrating the first electrode layer in the thickness direction.
  • a passivation layer is provided that covers the second electrode layer on the side opposite to the photoelectric conversion layer.
  • a protective layer is provided that covers the passivation layer on the side opposite to the second electrode layer.
  • a bonding layer for bonding the passivation layer and the protective layer is provided.
  • the first electrode layer is made of ITO.
  • the photoelectric conversion layer has a thickness of 100 to 200 nm.
  • the thickness of the second electrode layer is 100 to 200 nm.
  • the second electrode layer is made of metal.
  • the second electrode layer is made of Al.
  • the total thickness of the first electrode layer, the photoelectric conversion layer, the second electrode layer, and the passivation layer is 1.0 to 2.0 ⁇ m.
  • the method for producing an organic thin-film solar cell provided by the tenth aspect of the present invention has a predetermined thickness on the second surface side of a transparent support substrate having a first surface and a second surface opposite to the first surface. And forming a transparent first electrode layer having an opening on the surface, forming a photoelectric conversion layer on the first electrode layer, and forming a second electrode layer on the photoelectric conversion layer Steps.
  • the step of forming the first electrode layer includes the step of removing the first electrode layer in the thickness direction to form the opening.
  • the step of forming the opening is performed by removing the first electrode layer by a predetermined depth in the thickness direction.
  • the step of forming the opening is performed such that a thin portion having a thickness of 50 to 100 nm remains in the first electrode layer having a thickness of 100 to 200 nm.
  • the step of forming the opening is performed by removing the first electrode layer from the side opposite to the support substrate.
  • the step of forming the opening is performed after forming the first electrode layer before forming the opening.
  • the step of forming the opening is performed by removing the first electrode layer from the first surface side of the support substrate.
  • the step of forming the opening is performed after the step of forming the second electrode layer on the first electrode layer before the opening is formed.
  • the step of forming the opening is performed by forming a penetrating portion that penetrates the first electrode layer in its thickness direction.
  • the step of forming the opening is formed by arranging a plurality of lines having a width of 5 to 20 ⁇ m and extending in a predetermined direction at intervals of 30 to 50 ⁇ m.
  • the step of forming the opening is performed by laser irradiation.
  • the electronic device provided by the 11th side surface of this invention has a housing
  • the organic thin film solar cell module provided by the twelfth aspect of the present invention includes a transparent support substrate, a transparent first conductive layer laminated on the support substrate, a second conductive layer, and the first conductive layer. And a photoelectric conversion layer made of an organic thin film sandwiched between the second conductive layers, and a passivation layer covering the second conductive layer, the passivation layer having a first edge, and the first end The support substrate is exposed in a region adjacent to the edge.
  • the first conductive layer has a third edge that coincides with the first edge in plan view.
  • the first conductive layer has a third inward retraction edge that retreats inward from the first end edge in plan view.
  • the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
  • the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
  • the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
  • the first edge is annular in plan view.
  • the third end edge is annular in plan view.
  • the third inward withdrawal edge is annular in plan view.
  • the fourth inward withdrawal edge is annular in plan view.
  • the fifth inward withdrawal edge is annular in plan view.
  • the first conductive layer is made of ITO.
  • the second conductive layer is made of metal.
  • the second conductive layer is made of Al.
  • the passivation layer is made of SiN.
  • a protective resin layer is provided to cover the passivation layer, and the protective resin layer has a second edge that coincides with the first edge in plan view.
  • the second end edge and the first end edge form a continuous surface.
  • the second edge is annular in plan view.
  • the protective resin layer is made of an ultraviolet curable resin.
  • the protective resin layer has a second outer edge located on the opposite side of the second edge with at least a part of the photoelectric conversion layer in plan view.
  • the passivation layer has a first outer edge that coincides with the second outer edge in a plan view, and the first conductive layer includes the second outer edge and the first outer edge. It has an extended portion that extends outward from the edge, covers at least a part of the extended portion, and includes a bypass conductive portion made of a material having a lower resistance than the material of the first conductive layer.
  • the second outer edge and the first outer edge form a continuous surface.
  • the bypass conductive portion covers the second outer end edge and the first outer end edge.
  • the bypass conductive portion contains Ag or carbon.
  • the passivation layer has a first outer edge located on the opposite side of the first edge with at least a part of the photoelectric conversion layer in plan view,
  • the first conductive layer has an extending portion extending outward from the first outer edge, covers at least a part of the extending portion, and is lower than the material of the first conductive layer.
  • a bypass conductive portion made of a material of resistance, and a protective resin layer covering the bypass conductive portion.
  • the bypass conductive portion covers the first outer end edge.
  • the bypass conductive portion contains Ag or carbon.
  • the protective resin layer overlaps with the bypass conductive portion in a plan view and is provided in a region closer to the first outer edge than the first edge. Part.
  • the non-light-transmitting portion is white.
  • the second conductive layer has a fourth outer retraction edge that retreats inward from the second outer end edge and the first outer end edge in a plan view.
  • the photoelectric conversion layer has a second outer end edge and a fifth outer retreat edge that retreats inward from the first outer end edge in a plan view. .
  • An electronic device provided by a thirteenth aspect of the present invention includes an organic thin film solar cell module provided by a twelfth aspect of the present invention, and a drive unit that is driven by power feeding from the organic thin film solar cell module. Prepare.
  • the method for producing an organic thin film solar cell module includes a step of laminating a transparent first conductive film on a transparent support substrate, and a photoelectric conversion comprising an organic thin film on the first conductive film.
  • a step of laminating a protective resin layer having a second edge on the insulating film is provided after the step of forming the insulating film and before the step of exposing the support substrate.
  • the step of exposing the support substrate includes the passivation having the first edge that coincides with the second edge in plan view by partially removing the insulating film with the second edge as a boundary. Forming a layer, and forming the first conductive layer by removing portions of the first conductive film exposed from the first edge and the second edge.
  • the first conductive layer having the second edge and the third edge that coincides with the first edge in plan view is formed.
  • the second end edge and the first end edge are annular in plan view.
  • the third end edge is annular in plan view.
  • the first conductive layer is made of ITO.
  • the second conductive layer is made of metal.
  • the second conductive layer is made of Al.
  • the passivation layer is made of SiN.
  • the protective resin layer is made of an ultraviolet curable resin.
  • a second outer end located on the opposite side of the second end edge across at least a part of the photoelectric conversion layer in plan view Forming an edge on the passivation layer having a first outer edge that coincides with the second outer edge in plan view by partially removing the insulating film with the second edge as a boundary.
  • a step of forming and covering at least a part of the second outer end edge and the extending portion extending outward from the first outer end edge of the first conductive layer, and the first conductive layer Forming a bypass conductive portion made of a material having a resistance lower than that of the material.
  • the bypass conductive portion in the step of forming the bypass conductive portion, covers the second outer end edge and the first outer end edge.
  • the bypass conductive portion contains Ag or carbon.
  • the first conductive film and the insulating film are exposed by irradiating the first conductive film with laser light through the insulating film. Includes partial removal.
  • a region adjacent to the region irradiated with the laser beam in plan view is removed from the insulating film by the partial removal process.
  • a portion of the first conductive film that is not irradiated with the laser light is formed as an extended portion exposed from the passivation layer, covers at least a part of the extended portion, and
  • the bypass conductive portion contains Ag or carbon.
  • the protective resin layer in the step of forming the protective resin layer, it overlaps with the bypass conductive portion in a plan view and is not in the region on the first outer edge side with respect to the first edge. A translucent part is formed.
  • the organic thin film solar cell module provided by the fifteenth aspect of the present invention includes a transparent support substrate, a transparent first conductive layer laminated on the support substrate, a second conductive layer, and the first conductive layer. And a photoelectric conversion layer made of an organic thin film sandwiched between the second conductive layers, and a passivation layer covering the second conductive layer, the first conductive layer extending from the passivation layer in plan view An extension part, a slit whose both ends have reached the edge of the extension part, and a connection part having a connection part edge defined by the slit and connected to the both ends of the slit, and the photoelectric conversion
  • the layer includes a through-hole for conduction that is included in the connection portion of the first conductive layer in a plan view and penetrates in the thickness direction, and the second conductive layer and the connection portion of the first conductive layer are The photoelectric conversion layer A first bus bar portion covering at least a part of the connection extending portion extending from the passivation layer among the connection portions, and
  • the through-hole for conduction has a circular shape in plan view.
  • the through-hole for conduction has an elongated shape in a plan view having a direction parallel to the edge of the connection portion as a longitudinal direction.
  • the first electrode collector portion overlaps the second conductive layer and the photoelectric conversion layer in plan view, and in the thickness direction of the support substrate, the first electrode collector portion and The passivation layer is interposed between the second conductive layer.
  • the bypass conductive portion includes a second bus bar portion that covers at least a part of the extension portion of the first conductive layer, and a second collector that is electrically connected to the second bus bar portion. Part.
  • the second electrode collector portion overlaps the second conductive layer and the photoelectric conversion layer in a plan view, and in the thickness direction of the support substrate, the second electrode collector portion and The passivation layer is interposed between the second conductive layer.
  • the second bus bar portion has both ends connected to a portion of the extension portion of the first conductive layer sandwiching the connection portion, and the first pole collector portion in a plan view. It has a detour part which detours.
  • the photoelectric conversion layer has a design display penetrating portion that constitutes a design display portion that penetrates in the thickness direction and appears on the appearance, and the design display penetrating portion includes It is located on the opposite side of the connecting portion end edge with respect to the conducting through portion.
  • the first conductive layer includes a display opening for forming a display area, a third edge that defines the display opening, and the display layer to the display opening.
  • a first extending portion that extends to the side, and the connecting portion is partitioned by the slit having both ends reaching the third end edge.
  • the first conductive layer includes a display opening for forming a display region, a third edge that defines the display opening, and the third edge is opposite to the display opening.
  • a third outer edge located on the side, a first extension extending from the passivation layer to the display opening, and a second extension extending from the passivation layer to the opposite side of the display opening.
  • An extension portion, and the connection portion is partitioned by the slits whose both ends reach the third outer end edge.
  • a protective resin layer covering the bypass conductive portion is provided.
  • the passivation layer has a first edge facing the display opening in plan view
  • the protective resin layer includes a first protective resin layer that covers the passivation layer; A second protective resin layer that is laminated on the first protective resin layer and covers the bypass conductive portion, and the first protective resin layer coincides with the first edge in plan view
  • the first end edge and the second end edge form a continuous surface.
  • the bypass conductive portion has a seventh edge that coincides with the third edge in plan view.
  • the second protective resin layer has a sixth end located on the opposite side of the first end edge with respect to the third end edge and the seventh end edge in a plan view. It has an edge and is in contact with the support substrate.
  • the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
  • the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
  • the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
  • the passivation layer has a first edge that opposes the display opening in a plan view, and the bypass conductive portion is opposed to the third edge in a plan view.
  • the seventh end edge is located on the opposite side to the first end edge.
  • the protective resin layer has a second edge located on a side opposite to the first edge with respect to the seventh edge in plan view, and the support substrate. Is in contact with
  • the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
  • the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
  • the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
  • the first edge is annular in plan view.
  • the third end edge is annular in plan view.
  • the fourth inward withdrawal edge is annular in plan view.
  • the fifth inward withdrawal edge is annular in plan view.
  • the seventh end edge is annular in plan view.
  • the second edge is annular in plan view.
  • the sixth end edge is annular in plan view.
  • the first conductive layer is made of ITO.
  • the second conductive layer is made of metal.
  • the second conductive layer is made of Al.
  • the passivation layer is made of SiN.
  • the protective resin layer is made of an ultraviolet curable resin.
  • an electronic apparatus comprising: the organic thin film solar cell module provided by the fifteenth aspect of the present invention; and a drive unit that is driven by power feeding from the organic thin film solar cell module. Prepare.
  • An organic thin film solar cell module provided by a seventeenth aspect of the present invention includes a transparent support substrate, a transparent first conductive layer laminated on the support substrate, a second conductive layer, and the first conductive layer. And a photoelectric conversion layer made of an organic thin film sandwiched between the second conductive layers, and a passivation layer covering the second conductive layer, the first conductive layer extending from the passivation layer in plan view
  • the passivation layer has a first edge, and the support substrate is exposed in a region adjacent to the first edge.
  • the extension part of the first conductive layer includes a first extension part exposed from the first end edge, and the first extension part is A third edge spaced from the first edge;
  • the protective resin layer includes a first protective resin layer that covers the passivation layer, and a second protective resin layer that is laminated on the first protective resin layer and covers the bypass conductive portion.
  • the first protective resin layer has a second edge that coincides with the first edge in plan view.
  • the first end edge and the second end edge form a continuous surface.
  • the bypass conductive portion has a seventh edge that coincides with the third edge in plan view.
  • the second protective resin layer has a sixth end located on the opposite side of the first end edge with respect to the third end edge and the seventh end edge in a plan view. It has an edge and is in contact with the support substrate.
  • the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
  • the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
  • the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
  • the passivation layer has a first outer edge located on the opposite side of the first edge with at least a part of the photoelectric conversion layer in plan view,
  • the extension part includes a second extension part extending from the first outer end edge, and the second extension part is separated from the first outer end edge in a plan view. Has an edge.
  • the first protective resin layer has a second outer edge that coincides with the first outer edge in plan view.
  • the first outer end edge and the second outer end edge form a continuous surface.
  • the bypass conductive portion has a seventh outer end edge that coincides with the third outer end edge in a plan view.
  • the second protective resin layer is opposite to the first outer end edge with respect to the third outer end edge and the seventh outer end edge in a plan view. And has a sixth outer edge located on the support substrate.
  • the second protective resin layer overlaps with the bypass conductive portion in a plan view and is provided in a region that is provided in a region closer to the first outer edge than the first edge. Includes light.
  • the non-light-transmitting portion is white.
  • the bypass conductive portion has a seventh edge located on the opposite side of the first edge with respect to the third edge in plan view.
  • the protective resin layer has a second edge located on a side opposite to the first edge with respect to the seventh edge in plan view, and the support substrate. Is in contact with
  • the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
  • the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
  • the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
  • the passivation layer has a first outer edge located on the opposite side of the first edge with at least a part of the photoelectric conversion layer in plan view,
  • the extension part includes a second extension part extending from the first outer end edge, and the second extension part is separated from the first outer end edge in a plan view. Has an edge.
  • the bypass conductive portion has a seventh outer end edge located on a side opposite to the first outer end edge with respect to the third outer end edge in a plan view. Have.
  • the protective resin layer has a second outer edge located on the opposite side of the first outer edge with respect to the seventh outer edge in plan view. And in contact with the support substrate.
  • the protective resin layer overlaps the bypass conductive portion in a plan view and is provided in a region closer to the first outer edge than the first edge. including.
  • the non-light-transmitting portion is white.
  • the first edge is annular in plan view.
  • the third end edge is annular in plan view.
  • the fourth inward withdrawal edge is annular in plan view.
  • the fifth inward withdrawal edge is annular in plan view.
  • the sixth end edge is annular in plan view.
  • the seventh end edge is annular in plan view.
  • the second edge is annular in plan view.
  • the first conductive layer is made of ITO.
  • the second conductive layer is made of metal.
  • the second conductive layer is made of Al.
  • the passivation layer is made of SiN.
  • the protective resin layer is made of an ultraviolet curable resin.
  • An electronic device provided by an eighteenth aspect of the present invention includes an organic thin film solar cell module provided by the seventeenth aspect of the present invention, and a drive unit that is driven by power feeding from the organic thin film solar cell module. Prepare.
  • An organic thin film solar cell module provided by a nineteenth aspect of the present invention includes a transparent support substrate, a transparent first conductive layer laminated on the support substrate, a second conductive layer, and the first conductive layer. And a photoelectric conversion layer made of an organic thin film sandwiched between the second conductive layers, the first conductive layer passing through a substrate exposed region in which a part of the support substrate is exposed from the first conductive layer.
  • the first conductive layer has two adjacent first partition portions, and the second conductive layer has two second partition portions adjacent to each other with a part of the substrate exposed region interposed therebetween.
  • One of the first partition portions has a first edge of the first partition portion that defines the substrate exposure region, and the other of the two adjacent first partition portions defines the substrate exposure region.
  • the first partition part has a second end edge, and one of the two adjacent ones is the first The partition portion overlaps the first partition portion of one of the two adjacent ones in plan view, and the first partition portion first edge of the first partition portion of the two adjacent ones.
  • the second partition part first edge located on the opposite side to the first partition part second edge of the other first partition part is provided,
  • the other second partition portion has a second partition portion second end facing the second partition portion first end of one of the two adjacent ones in plan view, and the photoelectric conversion layer is In the plan view, one of the two adjacent ones and the other of the two adjacent two second divided parts overlap each other, and the first one of the two adjacent ones.
  • one of the adjacent two first partition portions does not overlap with the photoelectric conversion layer connection portion in a plan view and overlaps with the second conductive layer.
  • One of the two adjacent sections has a second electrode portion that coincides with the first electrode portion in plan view, and the photoelectric conversion layer has the first electrode in plan view.
  • a photoelectric conversion layer power generation unit that coincides with the electrode unit and the second electrode unit is provided.
  • one of the two adjacent ones has a first connection portion that coincides with the photoelectric conversion layer connection portion in plan view
  • the two adjacent The other second partition portion has a second connection portion that coincides with the photoelectric conversion layer connection portion in plan view.
  • the photoelectric conversion layer connecting portion and a part of the photoelectric conversion layer power generation portion are adjacent to each other in a direction intersecting with the direction in which the two first partition portions are arranged in plan view. Yes.
  • the photoelectric conversion layer power generation units are located on both sides of the photoelectric conversion layer connection unit in a direction intersecting with the direction in which the two first partition units are arranged in plan view.
  • the photoelectric conversion layer penetrating portion has a circular shape in plan view.
  • the first connection part of the first partition part of one of the two adjacent parts is included in the photoelectric conversion layer penetrating part in a plan view and penetrates in the thickness direction. It has a 1st penetration part.
  • the inner end edge of the first penetrating portion is separated from the inner end edge of the photoelectric conversion layer penetrating portion in plan view.
  • the said 1st connection part of one said 1st division part of the said adjacent two is the said support substrate in the area
  • the other second partition part of the two adjacent ones is connected to the second edge of the second partition part and the second partition part of one of the two adjacent parts.
  • a second partition section third end edge extending to a side away from the second partition section, and the substrate exposure area includes the second partition section second end edge of the other second partition section and the second section. It has two said crossing parts which cross
  • the substrate exposed region has two intersecting portions that intersect two places of the second partition portion second edge of the other second partition portion of the two adjacent ones.
  • the first partition portion first edge of one of the adjacent two partition portions is The first partition portion second end edge of the other first partition portion of the two adjacent ones has a second side that is parallel to the first side.
  • the first side and the second side are linear.
  • the two partition portion second edges are parallel to each other.
  • the second partition portion second edge is linear.
  • the second partition portion first edge of the second partition portion of one of the two mating portions and the second partition portion second edge of the other second partition portion of the two adjacent partitions are parallel to each other. is there.
  • the first side, the second side, the first edge of the second partition part, and the second edge of the second partition part are linear.
  • three or more adjacent first partition portions and three or more adjacent second partition portions are arranged.
  • three or more adjacent first partition portions and three or more adjacent second partition portions are arranged in a straight line.
  • three or more adjacent first partition portions and three or more adjacent second partition portions are arranged in a ring shape.
  • the second partition portion between two of the second partition portions is the second partition portion first edge and The second partition part second edge, and the second partition part first edge and the second partition part third edge that connects both ends of the second partition part second edge.
  • the said 2nd division part 1st edge of the said 2nd division part between two said 2nd division parts among the said 3 or more adjacent 2nd division parts, and the said The second partition portion second edge is parallel to each other.
  • the said 2nd 2nd division part 3rd edge of the said 2nd division part between two said 2nd division parts among the said 3 or more adjacent 2nd division parts. are parallel to each other.
  • the second partition portion first edge of the second partition portion between two of the three or more second partition portions adjacent to each other and the second partition portion and the second partition portion are perpendicular to each other.
  • the first conductive layer includes an external connection portion coinciding with the photoelectric conversion layer connection portion in plan view, and the second conductive layer and the photoelectric conversion connected to the external connection portion. And a third partition portion having an external electrode portion exposed from the layer.
  • the first conductive layer is made of ITO.
  • the second conductive layer is made of metal.
  • the second conductive layer is made of Al.
  • a passivation layer covering the second conductive layer is provided.
  • the passivation layer is made of SiN or SiON.
  • An electronic device provided by a twentieth aspect of the present invention includes an organic thin film solar cell module provided by the nineteenth aspect of the present invention, and a drive unit that is driven by power feeding from the organic thin film solar cell module. Prepare.
  • FIG. 2 is a cross-sectional view taken along the line II-II in FIG. It is a principal part enlarged plan view which shows the organic thin film solar cell module based on 1st Embodiment of this invention.
  • FIG. 4 is an enlarged cross-sectional view of a main part along line IV-IV in FIG. 3.
  • FIG. 5 is an enlarged cross-sectional view of a main part taken along line VV in FIG. 3. It is a principal part enlarged plan view which shows the organic thin film solar cell module based on 1st Embodiment of this invention.
  • FIG. 4 is an enlarged cross-sectional view of a main part along line IV-IV in FIG. 3.
  • FIG. 5 is an enlarged cross-sectional view of a main part taken along line VV in FIG. 3. It is a principal part enlarged plan view which shows the organic thin film solar cell module based on 1st Embodiment of this invention.
  • FIG. 4 is an enlarged cross-sectional view of a main part along line
  • FIG. 7 is an enlarged cross-sectional view of a main part taken along line VII-VII in FIG. 6. It is a system block diagram which shows the organic thin film solar cell module and electronic device based on 1st Embodiment of this invention. It is a principal part enlarged plan view which shows an example of the manufacturing method of the organic thin film solar cell module based on 1st Embodiment of this invention. It is a principal part expanded sectional view which shows an example of the manufacturing method of the organic thin-film solar cell module based on 1st Embodiment of this invention. It is a principal part enlarged plan view which shows an example of the manufacturing method of the organic thin film solar cell module based on 1st Embodiment of this invention.
  • FIG. 16 is an enlarged cross-sectional view of a main part taken along line XVI-XVI in FIG. 15.
  • FIG. 21 is an enlarged cross-sectional view of a main part along the line XXII-XXII in FIG. 20.
  • FIG. 21 is an enlarged cross-sectional view of a main part along the line XXIII-XXIII in FIG. 20.
  • FIG. 22 is an enlarged cross-sectional view of a main part along the line XXIV-XXIV in FIG. 20.
  • FIG. 21 is an enlarged cross-sectional view of a main part along the line XXV-XXV in FIG. 20. It is a top view which shows the 1st conductive layer of the organic thin-film solar cell module of FIG. It is a top view which shows the 2nd conductive layer of the organic thin-film solar cell module of FIG. It is a top view which shows the photoelectric converting layer of the organic thin film solar cell module of FIG. It is a principal part expanded sectional view which shows an example of the manufacturing method of the organic thin film solar cell module of FIG.
  • FIG. 45 is a schematic sectional view taken along line XLVI-XLVI of FIG. 44.
  • FIG. 45 is an essential part enlarged cross-sectional view taken along line XLVII-XLVII in FIG. 44.
  • FIG. 45 is a system configuration diagram showing the electronic device of FIG. 44.
  • FIG. 70 is a diagram showing a structure of an organic thin-film solar cell according to a seventh embodiment of the present invention and corresponding to an enlarged cross-sectional view along the line LXX-LXX in FIG. 69. It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG.
  • FIG. 70 is a diagram showing a structure of an organic thin-film solar cell according to an eighth embodiment of the present invention and corresponding to an enlarged cross-sectional view along the line LXX-LXX in FIG. 69.
  • FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin-film solar cell shown in FIG. 79.
  • FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin film solar cell shown in FIG. 79.
  • FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin film solar cell shown in FIG. 79.
  • FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin film solar cell shown in FIG. 79.
  • FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin film solar cell shown in FIG. 79.
  • FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin film solar cell shown in FIG. 79.
  • FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin film solar cell shown in FIG. 79.
  • FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin film solar cell shown in FIG. 79.
  • FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin film solar
  • FIG. 70 shows a structure of an organic thin-film solar cell according to a ninth embodiment of the present invention, and is a view corresponding to an enlarged cross-sectional view along the line LXX-LXX in FIG. 69. It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG.
  • FIG. 96 is an enlarged cross-sectional view taken along the line XCVI-XCVI in FIG. 95, showing the structure of the organic thin-film solar cell according to the tenth embodiment of the present invention. It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG.
  • FIG. 105 is a diagram showing a structure of an organic thin-film solar cell according to an eleventh embodiment of the present invention and corresponding to an enlarged cross-sectional view along the line CV-CV in FIG. 104.
  • FIG. 111 shows a structure of an organic thin-film solar cell according to a twelfth embodiment of the present invention, and is a view corresponding to an enlarged cross-sectional view taken along line CV-CV in FIG. It is a top view which shows the other example of the electronic device with which the organic thin film solar cell of this invention is used. It is an expanded sectional view which follows the CVIII-CVIII line of FIG.
  • FIG. 108 is an enlarged cross-sectional view taken along line CIX-CIX in FIG. 107.
  • FIG. 112 is an enlarged sectional view taken along line CXII-CXII of FIG. 111.
  • FIG. 114 is a schematic cross-sectional view taken along line CXV-CXV in FIG. 113. It is a principal part expanded sectional view which follows the CXVI-CXVI line
  • FIG. 114 is a system configuration diagram showing the electronic device of FIG. 113. It is a principal part disassembled perspective view which shows the organic thin-film solar cell module based on 13th Embodiment of this invention. It is a top view which shows the 1st conductive layer of the organic thin-film solar cell module based on 13th Embodiment of this invention. It is a top view which shows the photoelectric converting layer of the organic thin film solar cell module based on 13th Embodiment of this invention. It is a top view which shows the 2nd conductive layer of the organic thin-film solar cell module based on 13th Embodiment of this invention.
  • FIG. 147 is a schematic cross-sectional view taken along line CXLVII-CXLVII in FIG. 146. It is a principal part enlarged bottom view which shows the organic thin-film solar cell module based on 16th Embodiment of this invention.
  • FIG. 148 is an essential part enlarged cross-sectional view along the line CXLIX-CXLIX of FIG. 148;
  • FIG. 149 is an essential part enlarged cross-sectional view along the line CL-CL in FIG. 148;
  • FIG. 147 is a system configuration diagram showing the electronic device of FIG. 146. It is a principal part exploded perspective view which shows the organic thin-film solar cell module based on 16th Embodiment of this invention.
  • FIG. 1 It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. It is a principal part expanded bottom view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. It is a principal part enlarged plan view which shows the modification of the organic thin-film solar cell module based on 16th Embodiment of this invention. It is a principal part enlarged plan view which shows the organic thin-film solar cell module based on 17th Embodiment of this invention. FIG.
  • FIG. 173 is an enlarged cross-sectional view of a main part along the line CLXXIII-CLXXIII in FIG. 172;
  • FIG. 172 is an essential part enlarged cross-sectional view along the line CLXXIV-CLXXIV of FIG. 172;
  • It is a principal part enlarged plan view which shows the organic thin-film solar cell module based on 17th Embodiment of this invention.
  • It is a principal part expanded bottom view which shows the manufacturing method of the organic thin-film solar cell module based on 17th Embodiment of this invention.
  • It is a principal part expanded bottom view which shows the manufacturing method of the organic thin-film solar cell module based on 17th Embodiment of this invention.
  • FIG. 184 is a schematic cross-sectional view taken along the line CLXXXVI-CLXXXVI in FIG. 184.
  • FIG. 184 is an enlarged cross-sectional view of a main part along the line CLXXXVII-CLXXXVII in FIG. 184.
  • FIG. 184 is a system configuration diagram showing the electronic apparatus of FIG.
  • FIG. 23 is a cross-sectional view taken along line CCXXI-CCXXI in FIG. 220. It is a principal part enlarged plan view which shows the organic thin-film solar cell module based on 22nd Embodiment of this invention.
  • FIG. 23 is an enlarged cross-sectional view of a main part along the line CCXXIII-CCXXIII in FIG. 222.
  • FIG. 23 is an essential part enlarged cross-sectional view along the line CCXXIV-CCXXIV in FIG. 222. It is a principal part enlarged plan view which shows the organic thin-film solar cell module based on 22nd Embodiment of this invention. 228 is an enlarged cross-sectional view of a main part taken along the line CCXXVI-CCXXVI in FIG. 225.
  • FIG. It is a system block diagram which shows the organic thin-film solar cell module and electronic device based on 22nd Embodiment of this invention. It is a principal part enlarged plan view which shows an example of the manufacturing method of the organic thin film solar cell module based on 22nd Embodiment of this invention.
  • FIG. 25 is an essential part enlarged cross-sectional view taken along the line CCXXXV-CCXXXV in FIG. 234; It is a principal part expanded sectional view which shows the modification of the organic thin-film solar cell module based on 22nd Embodiment of this invention. It is a principal part top view which shows the organic thin film solar cell module based on 23rd Embodiment of this invention.
  • FIG. 228 is an enlarged cross-sectional view of main parts along the line CCXXXIX-CCXXXIX in FIG. 238.
  • FIG. 228 is an enlarged cross-sectional view of a main part along the line CCXL-CCXL in FIG. 238.
  • FIG. It is a principal part enlarged plan view which shows the organic thin film solar cell module based on 24th Embodiment of this invention. It is a principal part enlarged plan view which shows the organic thin film solar cell module based on 25th Embodiment of this invention.
  • “transparent” is defined as having a transmittance of about 50% or more. “Transparent” is also used to mean colorless and transparent to visible light. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.
  • FIG. 1 to 7 show an organic thin film solar cell module according to the first embodiment of the present invention.
  • FIG. 8 shows an electronic apparatus based on the first embodiment of the present invention.
  • FIG. 1 is a plan view of an essential part showing an organic thin film solar cell module A1.
  • FIG. 2 is a sectional view taken along line II-II in FIG.
  • FIG. 3 is a main part enlarged plan view showing the organic thin film solar cell module A1.
  • 4 is an enlarged cross-sectional view of a main part taken along line IV-IV in FIG.
  • FIG. 5 is an enlarged cross-sectional view of a main part taken along line VV in FIG.
  • FIG. 6 is an enlarged plan view of a main part showing the organic thin film solar cell module A1.
  • FIG. 7 is an enlarged cross-sectional view of a main part taken along line VII-VII in FIG.
  • FIG. 8 is a system configuration diagram showing the organic thin film solar cell module A1 and the electronic device B1.
  • “view in the z direction” means a plan view
  • z direction means a thickness direction of the support substrate 41 and the like.
  • the electronic device B1 includes an organic thin-film solar cell module A1 and a drive unit 71.
  • the organic thin film solar cell module A1 is a power supply module in the electronic device B1, and converts light such as sunlight into electric power.
  • the driving unit 71 is driven by power feeding from the organic thin film solar cell module A1.
  • the specific configuration and function of the drive unit 71 are not particularly limited, and various configurations that can realize the function of the electronic device B1 can be employed.
  • an electronic calculation processing unit that realizes an electronic device B1 as an electronic calculation device, a wireless communication unit that realizes an electronic device B1 as a wireless communication module, and an electronic device B1 as a wristwatch can be realized. Examples thereof include a timekeeping processing unit, an input / output arithmetic processing unit capable of realizing the electronic device B1 as a portable electronic terminal device, and the like.
  • the organic thin film solar cell module A1 includes a support substrate 41, a first conductive layer 1, a second conductive layer 2, a photoelectric conversion layer 3, and a passivation layer.
  • the organic thin film solar cell module A1 has a rectangular shape as viewed in the z direction, but this is an example of the shape of the organic thin film solar cell module A1, and can be set in various shapes.
  • the passivation layer 42 is omitted for convenience of understanding.
  • the support substrate 41 is a base of the organic thin film solar cell module A1.
  • the support substrate 41 has a single layer or a plurality of layers made of a material appropriately selected from, for example, transparent glass or resin.
  • the thickness of the support substrate 41 is, for example, 0.05 mm to 2.0 mm.
  • the shape and size of the support substrate 41 are not particularly limited, and in the present embodiment, the support substrate 41 has a rectangular shape as viewed in the z direction.
  • a plurality of substrate exposed regions 410 and substrate exposed regions 412 are formed, and a substrate exposed region 411 is formed as shown in FIG.
  • the plurality of substrate exposed regions 410, substrate exposed regions 411, and substrate exposed regions 412 are regions exposed from the first conductive layer 1 in the support substrate 41.
  • the first conductive layer 1 is formed on the support substrate 41.
  • the first conductive layer 1 is transparent and is made of ITO in this embodiment.
  • the first conductive layer 1 has a plurality of first partition portions 11 and third partition portions 15.
  • the shape of the first conductive layer 1 can be set to various shapes.
  • the thickness of the first conductive layer 1 is, for example, 100 nm to 300 nm.
  • the plurality of first partition portions 11 are adjacent to each other through the substrate exposed region 410.
  • the four first partition portions 11 are adjacent to each other through the three substrate exposed regions 410.
  • the four 1st division parts 11 are arranged on the straight line along the x direction.
  • the four first partition portions 11 are divided into a first partition portion 11-1, a first partition portion 11-2, a first partition portion 11-3, and a first partition portion 11-4. And will be described separately as necessary.
  • the first partition part 11 has a first partition part first edge 110, a first partition part second edge 120, and two first partition part third edges 130.
  • the first partition 110 first edge 110 is an edge that partitions a part of the substrate exposed region 410.
  • the first partition portion second edge 120 is an edge that partitions a part of the substrate exposed region 410. That is, the substrate exposed region 410 includes the first partition portion first edge 110 and the other first partition portion of one of the first partition portions 11 (right side in the x direction in the drawing, first partition portion 11-2 in FIG. 3). 11 (the left side in the x direction in the drawing, the first partition portion 11-3 in FIG. 3) and the second edge 120 of the first partition portion.
  • the first partition portion first edge 110 of the first partition portions 11-1 to 11-3 has the first side 111, and the first partition portion 11-2 to the first partition portion 11-2 to the first partition portion 11-4.
  • the two end edges 120 have a second side 121.
  • the first side 111 (the first side 111 of the first partition unit 11-2 in FIG. 3) and the second side 121 (the second side of the first partition unit 11-3 in FIG. 3) that partition the same substrate exposed region 410 121) are parallel to each other.
  • the first side 111 and the second side 121 are both linear along the y direction.
  • portions of the substrate exposure region 410 that are defined by the first side 111 and the second side 121 are linear along the y direction.
  • the two first partition portion third end edges 130 connect both ends of the first partition portion first end edge 110 and both ends of the first partition portion second end edge 120, respectively.
  • the first partition portion third edge 130 is linear along the x direction.
  • the first partition portion third edge 130 defines a part of the substrate exposed region 412. 11 of this embodiment is constituted by the first side 111 of the first partition part first edge 110, the second side 121 of the first partition part second edge 120, and the two first partition part third edges 130. It is made into the substantially rectangular shape by the x direction view made.
  • the first partition portion 11-1 and the third partition portion 15 located on the rightmost side in the x direction in the drawing are adjacent to each other with the substrate exposed region 411 interposed therebetween.
  • the third partition part 15 has a third partition part edge 160.
  • the substrate exposed region 411 is defined by the third partition portion edge 160 of the third partition portion 15 and the first partition portion second edge 120 of the first partition portion 11-1 adjacent to the third partition portion 15. Yes.
  • the third partition part edge 160 has a third partition part parallel part 161.
  • the third partition parallel part 161 is a part parallel to the second side 121 of the first partition 11-1. In this embodiment, the 3rd division part parallel part 161 is linear form along ay direction.
  • the photoelectric conversion layer 3 is laminated on the support substrate 41 and the first conductive layer 1, and is sandwiched between the first conductive layer 1 and the second conductive layer 2.
  • the photoelectric conversion layer 3 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power.
  • the specific configuration of the photoelectric conversion layer 3 is not particularly limited. For example, a bulk heterojunction organic active layer and a hole transport layer stacked on the first conductive layer 1 side with respect to the bulk heterojunction organic active layer are given. It consists of.
  • the photoelectric conversion layer 3 has a circular shape in plan view, but this is an example, and the photoelectric conversion layer 3 can have various shapes.
  • the thickness of the photoelectric conversion layer 3 is, for example, 50 nm to 300 nm.
  • a p-type organic active layer region and an n-type organic active layer region are mixed to form a complex bulk hetero pn junction.
  • the p-type organic active layer region is formed of, for example, P3HT (poly (3-hexylthiophene-2,5diyl)), and the n-type organic active layer region is, for example, PCBM (6,6-phenyl-C61-butyric acid methyl). ester).
  • the hole transport layer is made of, for example, PEDOT: PSS.
  • Examples of materials used to form the photoelectric conversion layer 3 include phthalocyanine (Pc: Phthhalocyanine), zinc phthalocyanine (ZnPc: Zinc- phthalocyanine), Me-Ptcdi (N, N'-dimethyl perylene-3,4,9,10). -dicarboximide) and fullerene (C 60: Buckminster fullerene). These materials are used for vacuum deposition, for example.
  • MDMO-PPV poly [2-methoxy-5- (3,7-dimethyl-octyloxy)]-1,4-phenylene-vinylene
  • PCDTBT poly [N-9'-hepta-decanyl-2,7-carbazole-alt-5,5- (4 ', 7'-di-thienyl-2'1', 3'-b3nzothiadizaole)]
  • PC60BM 6-phenyl-C61-butyric acid methyl ester
  • PC70BM 6-,6-phenyl-C71-butyric acid methyl ester
  • the material of the second conductive layer 2 is not particularly limited and may be transparent or opaque, but in the present embodiment, the second conductive layer 2 is represented by Al, W, Mo, Mn, and Mg. Made of metal.
  • the second conductive layer 2 is made of Al will be described as an example. Therefore, the second conductive layer 2 is opaque.
  • a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second conductive layer 2 opposite to the support substrate 41.
  • the thickness of the second conductive layer 2 is thicker than the thickness of the photoelectric conversion layer 3 and is, for example, 1 ⁇ m to 5 ⁇ m.
  • the second conductive layer 2 has a plurality of second partition portions 21.
  • the plurality of second partition portions 21 are adjacent to each other with a part of the substrate exposed region 410 interposed therebetween.
  • the adjacent second partition parts 21 include the first side 111 of the first partition part first edge 110 and the second side 121 of the first partition part second edge 120.
  • the four second partition portions 21 are adjacent to each other with a part of each of the three substrate exposed regions 410 interposed therebetween. Further, the four second partition portions 21 are arranged on a straight line along the x direction.
  • the four second partition sections 21 are divided into a second partition section 21-1, a second partition section 21-2, a second partition section 21-3, and a second partition section 21-4. And will be described separately as necessary.
  • the second partition portion 21 overlaps the first partition portion 11 when viewed in the z direction.
  • the second partition part 21 has a second partition part first edge 210, a second partition part second edge 220, and two second partition part third edges 230.
  • the second partition portion first edge 210 of the second partition portions 21-1 to 21-3 is a first partition portion 11-1 to 3-3 (which defines the substrate exposed region 410).
  • the first partition portions 11-2 to 11-4 (first partition portion 11-3 in FIG. 3) defining the substrate exposed region 410 with respect to the first edge 110 of the first partition portion 11-2) in FIG. It is located on the opposite side to the first partition portion second end edge 120.
  • the second partition portion second edge 220 is opposed to the second partition portion first edge 210 of the second partition portion 21 adjacent to each other with a part of the substrate exposed region 410 interposed therebetween in the z direction.
  • the second partition portion first edge 210 (second partition portion first edge 210 of the second partition portion 21-2 in FIG. 3) and the second partition portion second edge 220 (FIG. 3). And the second partition part second end edge 220) of the second partition part 21-3 are parallel to each other.
  • the 2nd division part 1st edge 210 and the 2nd division part 2nd edge 220 are linear form along ay direction. That is, in the present embodiment, the first side 111, the second side 121, the second partition part first edge 210, and the second partition part second edge 220 are parallel to each other, and are linear along the y direction. It is.
  • the two second partition part third end edges 230 connect both ends of the second partition part first end edge 210 and both ends of the second partition part second end edge 220, respectively.
  • the two second partition portion third end edges 230 are parallel to each other and are linear along the x direction.
  • the second partition portion 21 having the second partition portion first end edge 210, the second partition portion second end edge 220, and the two second partition portion third end edges 230 has a rectangular shape as viewed in the z direction.
  • the passivation layer 42 is laminated on the second conductive layer 2 and covers the second conductive layer 2 and the photoelectric conversion layer 3.
  • the passivation layer 42 is made of, for example, SiN or SiON.
  • the thickness of the passivation layer 42 is, for example, 0.5 ⁇ m to 2.0 ⁇ m. In the present embodiment, the thickness is, for example, about 1.5 ⁇ m. Since the passivation layer 42 covers the photoelectric conversion layer 3, it is possible to prevent water, particles, and the like from entering the photoelectric conversion layer 3 from the outside. Moreover, the passivation layer 42 can improve the intensity
  • the flat passivation layer 42 as described above can be formed, for example, by making the passivation layer 42 thick with respect to the photoelectric conversion layer 3 or by a method using CVD described later. Not limited to this.
  • another layer may be stacked on the passivation layer 42.
  • a bonding layer for bonding other components of the electronic device B1 and the organic thin film solar cell module A1 may be provided.
  • a protective layer that protects the passivation layer 42 may be provided.
  • the first partition portion first edge 110 of the first partition portions 11-1 to 11-3 (the first partition portion 11-2 in FIG. 3) is added to the first side 111.
  • Two first covering portions 112 are provided.
  • the first covering portion 112 is a portion of the first partition portion first edge 110 that overlaps the second partition portion 21 when viewed in the z direction and is covered with the second partition portion 21 when viewed in the z direction.
  • two first covering portions 112 are provided connected to both ends of the first side 111 in the y direction.
  • the shape of the first covering portion 112 is not particularly limited.
  • the first covering portion 112 has a shape protruding in the x direction with respect to the first side 111, and the first side 1121, It has two sides 1122 and a third side 1123.
  • the first side 1121 is a side that is parallel to the first partition portion third edge 130 and extends in the x direction.
  • the second side 1122 is a side along the direction intersecting the first side 1121 and is along the y direction.
  • the third side 1123 is a side that connects the first side 1121 and the second side 1122 and has a curved shape in the illustrated example.
  • the illustrated first covering portion 112 has one end reaching the second partition portion second end edge 220 and the other end intersecting the second partition portion third end edge 230 in the z-direction view.
  • the first partition portion second edge 120 of the first partition portions 11-2 to 11-2 to 4 (first partition portion 11-3 in FIG. 3) is added to the second side 121.
  • Two second covering portions 122 are provided.
  • coated part 122 is a part which overlaps with the 2nd division part 21 in z direction view among the 1st division part 2nd edges 120.
  • two second covering portions 122 are provided connected to both ends of the second side 121 in the y direction.
  • the shape of the second covering portion 122 is not particularly limited, and in the present embodiment, the second covering portion 122 has a shape that is recessed in the x direction with respect to the second side 121.
  • the first side 1221 is a side parallel to the first partition portion third end edge 130 and along the x direction.
  • the second side 1222 is a side along the direction intersecting the first side 1221 and is along the y direction.
  • the third side 1223 is a side that connects the first side 1221 and the second side 1222, and has a curved shape in the illustrated example.
  • the illustrated second covering portion 122 has one end reaching the second partition portion second edge 220 and the other end reaching the second partition portion third edge 230.
  • the substrate exposed region 410 of the present embodiment overlaps the second partition portion 21 when viewed in the z direction, and the intersecting portion 415 and the intersecting portion. 416.
  • the intersecting portion 415 is a portion where the substrate exposed region 410 intersects the second partition portion second edge 220.
  • the intersecting portion 416 is a portion where the substrate exposed region 410 intersects the second partition portion third edge 230.
  • the photoelectric conversion layer 3 has a plurality of photoelectric conversion layer connecting portions 33.
  • the photoelectric conversion layer connecting portion 33 is a part of the substrate exposed region 410 when viewed in the z direction (in the case of the portion shown in FIG. 3, the first side 111 of the first partitioning portion 11-2).
  • the first partition portion 11 of the first conductive layer 1 adjacent to each other across the portion defined by the second side 121 of the first partition portion 11-3 (in the case of the portion shown in FIG. 3, the first partition portion 11).
  • the second partition portion 21 of the second conductive layer 2 the second partition portion 21-3 in the case of the portion shown in FIG.
  • the photoelectric conversion layer connecting portion 33 has the second partition portion third edge 230 (in the case of the portion shown in FIG. 3, the second partition portion third edge of the second partition portion 21-3). 230). That is, the photoelectric conversion layer connecting portion 33 of the present embodiment overlaps with a corner of the second partition portion 21 (second partition portion 21-3 in the case of the portion shown in FIG. 3) that is rectangular when viewed in the z direction. In the position. Further, in the present embodiment, as shown in FIG. 1, two photoelectric conversion layer connection portions 33 are provided at positions overlapping two corner portions separated in the y direction with respect to one second partition portion 21. It has been.
  • a photoelectric conversion layer penetrating portion 331 is formed in the photoelectric conversion layer connecting portion 33.
  • the photoelectric conversion layer penetrating part 331 is configured by a through hole that penetrates the photoelectric conversion layer 3 in the z direction.
  • the shape and size of the photoelectric conversion layer penetrating portion 331 are not particularly limited, and in the illustrated example, the photoelectric conversion layer penetrating portion 331 has a circular shape in the z direction.
  • the diameter of this photoelectric conversion layer penetration part 331 is about 40 micrometers, for example.
  • the photoelectric conversion layer connection portion 33 is formed with a protrusion 332. As shown in FIG.
  • the protrusion 332 is a portion protruding in the z direction from the peripheral portion of the photoelectric conversion layer 3. As shown in FIG. 3, the protrusion 332 surrounds the photoelectric conversion layer penetrating portion 331 when viewed in the z direction.
  • the first partition units 11-1 to 11-3 have a first connection unit 13.
  • the first connection portion 13 is a portion that coincides with the photoelectric conversion layer connection portion 33 when viewed in the z direction.
  • the 2nd division part 21 has the 2nd connection part 23.
  • the 2nd connection part 23 is a part which corresponds with the photoelectric converting layer connection part 33 in z direction view.
  • the first connecting portion 13 of the first partitioning portions 11-1 to 11-3 and the second connecting portions 21-2 to 4-4 are in contact with each other through the photoelectric conversion layer penetrating portion 331 and are electrically connected to each other. Yes. For this reason, the 1st connection part 13, the 2nd connection part 23, and the photoelectric converting layer connection part 33 are parts which do not generate electric power.
  • the first penetration part 131 is provided in the first connection part 13 of the first partition part 11.
  • a through hole that penetrates the first conductive layer 1 in the z direction is referred to as a first through portion 131.
  • the first penetration part 131 is included in the photoelectric conversion layer penetration part 331 when viewed in the z direction. Further, the inner end edge of the first penetrating part 131 is separated from the inner end edge of the photoelectric conversion layer penetrating part 331 when viewed in the z direction. Thereby, a part of the 1st connection part 13 of the 1st division part 11 is exposed from the photoelectric converting layer penetration part 331 in z direction view.
  • the second connection portions 23 of the second partition portions 21-2 to 21-4 of the second conductive layer 2 are in contact with the exposed portions. Further, the second connection portions 23 of the second partition portions 21-2 to 21-4 are in contact with the support substrate 41 through the first penetration portion 131.
  • the photoelectric conversion layer 3 has a plurality of photoelectric conversion layer power generation units 32. Further, the first partition portion 11 of the first conductive layer 1 has a first electrode portion 12, and the second partition portion 21 of the second conductive layer 2 has a second electrode portion 22. 1, 3, and 6, the first electrode unit 12, the second electrode unit 22, and the photoelectric conversion layer power generation unit 32 are hatched with a plurality of discrete points.
  • the first electrode portion 12 is a portion that does not overlap with the photoelectric conversion layer connection portion 33 and overlaps with the second partition portion 21 of the second conductive layer 2 when viewed in the z direction.
  • the second partition portion 21 is a portion that coincides with the first electrode portion 12 when viewed in the z direction.
  • the photoelectric conversion layer power generation unit 32 is a portion that coincides with the first electrode unit 12 and the second electrode unit 22 when viewed in the z direction.
  • the 1st electrode part 12, the 2nd electrode part 22, and the photoelectric converting layer electric power generation part 32 are 2nd division part 1st edge 210, 2nd division part 2nd edge 220 in z direction view, This is a portion defined by the two second partition portion third edges 230 and the two second covering portions 122.
  • the 1st electrode part 12 and the 2nd electrode part 22 are laminated
  • the photoelectric conversion layer connection portion 33 and a part of the photoelectric conversion layer power generation portion 32 are adjacent to each other with a gap in the y direction. That is, the position of the photoelectric conversion layer connection unit 33 in the x direction is the same as the position in the x direction of a part of the photoelectric conversion layer power generation unit 32.
  • the first connection portion 13 is adjacent to a part of the first electrode portion 12 of the first partition portion 11 adjacent to each other via the substrate exposed region 410 in the y direction. That is, the position of the first connection portion 13 in the x direction overlaps with a part of the first electrode portion 12 in the x direction.
  • the third partition portion 15 includes an external electrode portion 151 and an external connection portion 153.
  • the external connection portion 153 is a portion that coincides with the second connection portion 23 and the photoelectric conversion layer connection portion 33 of the second partition portion 21-1 when viewed in the z direction.
  • the external connection part 153 is in contact with the second connection part 23 of the second partition part 21-1 through the photoelectric conversion layer penetration part 331.
  • the external connection portion 153 is provided with an external connection portion penetration portion 1531.
  • a through hole that penetrates the external connection portion 153 of the first conductive layer 1 in the z direction is referred to as an external connection portion through portion 1531.
  • the external connection portion penetration portion 1531 is included in the photoelectric conversion layer penetration portion 331 as viewed in the z direction. Further, the inner end edge of the external connection portion penetration portion 1531 is separated from the inner end edge of the photoelectric conversion layer penetration portion 331 when viewed in the z direction. Thereby, a part of external connection part 153 of the 3rd division part 15 is exposed from the photoelectric converting layer penetration part 331 in z direction view.
  • the second connection part 23 of the second partition part 21-1 of the second conductive layer 2 is in contact with the exposed part.
  • the second connection portion 23 is in contact with the support substrate 41 through the external connection portion through portion 1531.
  • the external electrode portion 151 is a portion exposed from the second conductive layer 2, the photoelectric conversion layer 3, and the passivation layer 42.
  • the external electrode portion 151 is a portion that outputs the electric power generated in the organic thin film solar cell module A1, and is electrically connected to the terminal of the electronic device B1, for example.
  • the first partition portion 11-4 provided on the side opposite to the third partition portion 15 in the x direction has the external electrode portion 141.
  • the external electrode portion 141 is a portion exposed from the second conductive layer 2, the photoelectric conversion layer 3, and the passivation layer 42 in the first partition portion 11-4.
  • the external electrode part 141 is a part that outputs electric power generated in the organic thin film solar cell module A1, and is electrically connected to, for example, a terminal of the electronic device B1.
  • the organic thin film solar cell module A ⁇ b> in the organic thin film solar cell module A ⁇ b> 1, four sets of the first electrode unit 12, the second electrode unit 22, and the photoelectric conversion layer power generation unit 32. Are directly connected to each other through six sets of the first connection portion 13, the second connection portion 23, and the photoelectric conversion layer connection portion 33.
  • the electric power generated in the four sets of the first electrode unit 12, the second electrode unit 22, and the photoelectric conversion layer power generation unit 32 connected in series is output from the external electrode unit 141 and the external electrode unit 151. This electric power is used to drive the drive unit 71 of the electronic apparatus B1.
  • FIGS. 9, FIG. 11, FIG. 13 and FIG. 15 are main part enlarged plan views showing the same parts as FIG. 3, and FIGS. 10, 12, 14 and 16 are the same parts as FIG. It is a principal part expanded sectional view which shows this.
  • the first conductive film 10 is formed by depositing ITO on one surface of the support substrate 41 by a general method such as sputtering. Next, by patterning the first conductive film 10, a substrate exposed region 410, a substrate exposed region 411 and a substrate exposed region 412 are formed, and a plurality of first partition portions 11 and third partition portions 15 are obtained.
  • a patterning method for the first conductive film 10 for example, a method using wet etching and a method using laser patterning such as Green laser light and IR laser light are appropriately employed. In the present embodiment, IR laser light is used as the laser light Lz1. Note that, in FIG. 9, reference numerals are given to portions that become the first covering portion 112 and the second covering portion 122 through the steps described later for the sake of convenience.
  • an organic film 30 is formed.
  • the organic film 30 is formed, for example, by forming an organic film on the support substrate 41 and the first conductive film 10 by spin coating.
  • the photoelectric conversion layer penetrating portion 331 is formed in the organic film 30.
  • the photoelectric conversion layer penetrating part 331 is formed by, for example, laser patterning.
  • the laser beam Lz2 used for this laser patterning one that can partially remove the photoelectric conversion layer penetrating portion 331 is appropriately selected. In the present embodiment, a case where laser patterning using an IR laser beam as the laser beam Lz2 is performed will be described as an example.
  • the laser beam Lz2 removes part of the organic film 30 and the first conductive film 10 one by one.
  • the photoelectric conversion layer penetration part 331 is formed in the organic film 30, and the first penetration part 131 is formed in the first conductive film 10.
  • the first conductive layer 1 and the photoelectric conversion layer 3 are obtained as shown in FIGS. 13 and 14.
  • a protrusion 332 is formed in the photoelectric conversion layer 3.
  • the second conductive layer 2 is formed.
  • the second conductive layer 2 is formed, for example, by forming a metal film on the support substrate 41, the first conductive layer 1 and the photoelectric conversion layer 3 from the above-described metal by an evaporation method such as an electron beam evaporation method.
  • the film thickness at this time is larger than the thickness of the photoelectric conversion layer 3 and is, for example, 1 ⁇ m to 5 ⁇ m.
  • the metal film is patterned by etching using, for example, a mask layer. By this patterning, the second conductive layer 2 having a plurality of second partition portions 21 is formed on the first conductive layer 1 and the photoelectric conversion layer 3.
  • a passivation layer 42 is formed by depositing SiN or SiON on the support substrate 41, the first conductive layer 1, the photoelectric conversion layer 3, and the second conductive layer 2 by, for example, plasma CVD.
  • the organic thin film solar cell module A1 is obtained through the above steps.
  • the thickness of the second conductive layer 2 is thicker than the thickness of the photoelectric conversion layer 3. For this reason, for example, even when the protrusion 332 is generated when the photoelectric conversion layer penetrating portion 331 is formed in the photoelectric conversion layer 3, the protrusion 332 can be more reliably covered with the second conductive layer 2. Thereby, for example, it is possible to avoid the occurrence of fine cracks in the passivation layer 42 due to the presence of the protrusions 332. This is suitable for preventing outside air from entering the photoelectric conversion layer 3 and the like. Therefore, unintentional breakage of the organic thin film solar cell module A1 and the electronic device B1 can be prevented.
  • the thickness of the photoelectric conversion layer 3 is 50 nm to 300 nm, while the thickness of the second conductive layer 2 is 1 ⁇ m to 5 ⁇ m.
  • an irregular portion such as the photoelectric conversion layer penetrating portion 331 that may occur in the photoelectric conversion layer 3 during production or the like.
  • the substrate exposed region 410 partially defined by the first covering portion 112 of the first partition portion 11-2 that partitions the photoelectric conversion layer connecting portion 33 is the second partition portion 21-3.
  • the second section 220 has an intersection 415 that intersects the second edge 220.
  • the photoelectric conversion layer connecting portion 33 is partially provided along the second partition portion second edge 220 of the second partition portion 21-3, and the second partition portion of the second partition portion 21-3.
  • the photoelectric conversion layer connection portion 33 is not provided over the entire length of the second end edge 220.
  • the substrate exposed region 410 has one intersection 415 and one intersection 416. That is, the substrate exposed region 410 that partitions the photoelectric conversion layer connection portion 33 extends from the second partition portion second edge 220 of the second partition portion 21-3 and extends from the second partition portion 21-3 of the second partition portion 21-3. Crosses 3 edge 230.
  • the substrate exposed region 410 intersects the second partition part second end edge 220 of the second partition part 21-3 at two locations, the second partition is viewed in the z direction as compared to the present example.
  • the substrate exposed region 410 that overlaps the portion 21-3 becomes longer. Since the substrate exposed region 410 is a non-power generation portion, it is suitable for reducing the area ratio of such a non-power generation portion.
  • the photoelectric conversion layer penetrating portion 331 is constituted by a through hole having a diameter of about 40 ⁇ m, for example. For this reason, the area of the photoelectric conversion layer connection part 33 including the photoelectric conversion layer penetrating part 331 can be further reduced.
  • the first penetration part 131 is formed together with the photoelectric conversion layer penetration part 331 when, for example, an IR laser beam is used as the laser beam Lz2 shown in FIG. Since this IR laser light can partially remove the first conductive layer 1 made of ITO, it can be used as the laser light Lz1 in the laser patterning of the first conductive film 10 shown in FIG. Thus, in the method for manufacturing the organic thin-film solar cell module A1 shown in FIGS. 9 to 16, one type of laser light (IR laser light) may be used as the laser light Lz1 and the laser light Lz2. This is preferable for simplification of the manufacturing method and the manufacturing apparatus, and contributes to shortening of the manufacturing time.
  • IR laser light IR laser light
  • connection part 13 By providing two sets of the first connection part 13, the second connection part 23, and the photoelectric conversion layer connection part 33 at a position overlapping the two corners of the second partition part 21, two adjacent sets of the first electrode parts 12.
  • the resistance between the second electrode unit 22 and the photoelectric conversion layer power generation unit 32 can be further reduced.
  • the first connection portion 13, the second connection in the other set Even if conduction in the first connection portion 13, the second connection portion 23, and the photoelectric conversion layer connection portion 33 in one set becomes inappropriate, the first connection portion 13, the second connection in the other set.
  • the two adjacent first electrode parts 12, the second electrode part 22, and the photoelectric conversion layer power generation part 32 can be appropriately connected by the connection part 23 and the photoelectric conversion layer connection part 33.
  • FIG. 17 shows a modification of the present invention.
  • the same or similar elements as those in the above example are denoted by the same reference numerals as in the above example.
  • FIG. 17 shows a modification of the organic thin film solar cell module A1.
  • the first through portion 131 described above is not formed in the first connection portion 13 of the first partition portion 11 (the first partition portion 11-2 in FIG. 17).
  • the support substrate 41 is connected to the first connection portion 13 of the first conductive layer 1 (the first partition portion 11-2 in FIG. It is covered by a connection 13).
  • Such a configuration is realized, for example, by using Green laser light as the laser light Lz2 and appropriately setting the output and irradiation time in laser patterning for forming the photoelectric conversion layer penetrating portion 331 in the organic film 30. Yes.
  • the protrusion 332 is not formed on the photoelectric conversion layer 3.
  • the manufacturing method of the organic thin film solar cell module, the electronic device, and the organic thin film solar cell module according to the present invention is not limited to the above-described embodiment.
  • the specific configuration of the electronic device and the method for manufacturing the organic thin-film solar cell module according to the present invention can be variously changed in design.
  • “transparent” is defined as having a transmittance of about 50% or more. “Transparent” is also used to mean colorless and transparent to visible light. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.
  • the electronic apparatus B2 of this embodiment includes an organic thin-film solar cell module A2, a case 61, a band 62, a drive unit 71, a long needle 72, and a short needle 73.
  • FIG. 18 is a plan view showing the electronic device B2.
  • FIG. 19 is a system configuration diagram showing the electronic apparatus B2.
  • Organic thin-film solar cell module A2 is a power supply module in electronic device B2, and converts light such as sunlight into electric power.
  • the driving unit 71 is driven by power feeding from the organic thin film solar cell module A2.
  • the long hand 72 and the short hand 73 are driven by the long hand 72.
  • the drive unit 71 has a timekeeping function.
  • the drive unit 71 drives the long hand 72 and the short hand 73 at an angle (position) corresponding to the time. Further, the drive unit 71 acquires the power acquired from the organic thin film solar cell module A2 from a circuit that adjusts the voltage or current level so that it can be used by an IC having a timekeeping function, or the organic thin film solar cell module A2.
  • a secondary battery that stores the generated electric power may be provided.
  • the photoelectric conversion layer 3 has a plurality of design display portions 35 to be described later appearing on the appearance. The plurality of design display portions 35 are designed to specify time.
  • the organic thin film solar cell module A2 the driving unit 71, the long needle 72, and the short needle 73 are accommodated in a case 61 made of metal or resin.
  • the band 62 is for fixing the case 61 to the wrist of the user.
  • the organic thin-film solar cell module A2 is configured as a watch (watch).
  • the organic thin film solar cell module A2 includes a first conductive layer 1, a second conductive layer 2, a photoelectric conversion layer 3, a support substrate 41, a passivation film 42, a bonding layer 43, and a protective layer 44.
  • the organic thin-film solar cell module A2 has a circular shape in plan view, but this is an example of the shape of the organic thin-film solar cell module A2, and can be set in various shapes.
  • FIG. 20 is a plan view showing the organic thin film solar cell module A2.
  • FIG. 21 is an exploded perspective view showing the organic thin film solar cell module A2.
  • 22 is an enlarged cross-sectional view of a main part taken along line XXII-XXII in FIG.
  • FIG. 23 is an enlarged cross-sectional view of a main part taken along line XXIII-XXIII in FIG. 24 is an enlarged cross-sectional view of a main part taken along line XXIV-XXIV in FIG.
  • FIG. 25 is an enlarged cross-sectional view of a main part taken along line XXV-XXV in FIG.
  • the first conductive layer 1 is represented as a solid line and transmits
  • the second conductive layer 2 is represented as a hidden line (dotted line).
  • the non-penetrating portion of the photoelectric conversion layer 3 is hatched with a plurality of discrete points. Further, in FIGS. 22 to 25, sunlight comes from above in the drawing.
  • the support substrate 41 is a member that becomes a base of the organic thin film solar cell module A2.
  • the support substrate 41 is made of, for example, transparent glass or resin.
  • the thickness of the support substrate 41 is, for example, 0.05 mm to 2.0 mm.
  • the first conductive layer 1 is formed on the support substrate 41.
  • the first conductive layer 1 is transparent and is made of ITO in this embodiment.
  • FIG. 26 is a plan view showing the first conductive layer 1.
  • the first conductive layer 1 includes a plurality of first electrode portions 11, a plurality of first partition portions 12, a plurality of first connecting portions 13, a first end portion 14, and a first extension portion 15.
  • the first conductive layer 1 is configured such that a portion excluding the first extension portion 15 and the second extension portion 16 has a substantially circular shape in plan view. It is an example of 1 shape.
  • the shape of the first conductive layer 1 can be set to various shapes.
  • the thickness of the first conductive layer 1 is, for example, 100 nm to 300 nm.
  • the first electrode portion 11, the first partitioning portion 12, the first connecting portion 13, the first end portion 14, the first extending portion 15 and the second extending portion 16 of the first conductive layer 1 are shown. Are hatched with diagonal lines.
  • the first end portion 14 and the first end portion 14 are formed apart from each other, but the slit 19 indicates a region generated by the separation.
  • the plurality of first electrode portions 11 are layers in which holes generated by the photoelectric conversion layer 3 are aggregated, and function as so-called anode electrodes.
  • the six first electrode portions 11 are arranged concentrically.
  • the first electrode portion 11 of the present embodiment has an arc edge 111 located near the center of the first conductive layer 1.
  • a circular opening in a plan view is defined at the center of the first conductive layer 1 by the arc edges 111 of the six first electrode portions 11.
  • the first electrode portion 11 includes a pair of linear edges 112 extending radially outward from both ends of the arc edge 111, and a pair of substantially semicircles that are connected to the linear edges 112 and recessed inward. It has a circular arc edge 113 having a shape.
  • a portion defined by the shape of the second conductive layer 2 in the shape of the first connecting portion 13 described later is indicated by an imaginary line (two-dot chain line), and a pair of arcs One of the end edges 113 corresponds to this.
  • the portion defined by the shape of the second conductive layer 2 is a boundary for defining the first electrode portion 11 and is not a physical edge formed in the first conductive layer 1. This boundary is referred to as an arc edge 113.
  • the first electrode portion 11 has an arc edge 114 located radially outward with respect to the pair of arc edges 113.
  • the outer edges of the substantially circular portions of the first conductive layer 1 in plan view are formed by the arc edges 114 of the six first electrode portions 11.
  • the first electrode portion 11 has an edge that is recessed inward from the vicinity of the center of the arc edge 114.
  • the inwardly recessed edge includes a pair of linear portions 115 inclined with respect to the radial direction and a substantially circular circular portion 116 connected to the linear portions 115 and surrounds the first partition portion 12. .
  • the first electrode portion 11 is partially opened, and this opening portion is referred to as an opening 18.
  • Adjacent first electrode portions 11 are arranged with a slit 19 therebetween.
  • the first electrode unit 11 has an edge that is recessed inward from the vicinity of the center of the arc edge located radially outward. 11 may have a configuration in which the arc edge located radially outward is continuous in an arc shape and does not have the edge.
  • the plurality of first partition parts 12 are parts surrounded by the first electrode part 11 through the slits 19. Since the first electrode portion 11 and the first partition portion 12 are separated from each other with the slit 19 in plan view, the first electrode portion 11 and the first partition portion 12 are insulated from each other. The first partition portion 12 comes into contact with a part of the second conductive layer 2 through a design display portion 35 (through portion 350) described later. For this reason, the first partition 12 does not function as an electrode for power generation in the photoelectric conversion layer 3. On the other hand, the first electrode portion 11 is insulated from the first partition portion 12, thereby ensuring a function as a power generation electrode.
  • the 1st division part 12 encloses the design display part 35 of the photoelectric converting layer 3 mentioned later in planar view.
  • the plurality of first partition portions 12 are arranged so as to be surrounded by the plurality of first electrode portions 11, and in the radial direction of the substantially circular portion in plan view of the first conductive layer 1. It is arranged at a position closer to the outer periphery than the center.
  • the first partitioning portion 12 has, for example, a shape having a substantially circular portion in a plan view and a wedge-shaped portion that protrudes radially outward from the substantially circular portion.
  • the plurality of first connecting portions 13 are connected to one of the two adjacent first electrode portions 11 and are adjacent to the other of the two adjacent first electrode portions 11 across the slit 19.
  • the first connecting portion 13 includes a protruding portion that is partitioned in a semicircular shape by the slit 19 and a semicircular portion that is connected to the protruding portion and enters the inside of the first electrode portion 11 (see FIG. 26, a portion having a circular shape in plan view, and a wedge-shaped portion protruding outward in the radial direction from the circular portion.
  • a semicircular portion of the first connecting portion 13 that enters the first electrode portion 11 is defined by the shape of the second conductive layer 2 described later.
  • the 1st communication part 13 includes the design display part 35 of the photoelectric converting layer 3 mentioned later in planar view.
  • the first connecting portion 13 is disposed at a position closer to the outer periphery than the center in the radial direction of the substantially circular portion in a plan view of the first conductive layer 1, similarly to the first partition portion 12. ing.
  • the first extending portion 15 is connected to one of the plurality of first electrode portions 11. More specifically, in FIG. 26, the first conductive layer 1 extends radially outward from the right portion of the arc edge 114 of the lower left first electrode portion 11 in the drawing.
  • the 1st extension part 15 of this embodiment is plane view substantially rectangular shape, the shape of the 1st extension part 15 is not limited to this, Various shapes can be adopted.
  • the first end portion 14 is a portion sandwiched between the first electrode portion 11 connected to the first extension portion 15 and the first electrode portion 11 adjacent to the first electrode portion 11 via the slit 19.
  • the first end portion 14 includes a first electrode portion 11 connected to the first extension portion 15, and a first electrode portion 11 adjacent to the right side with respect to the first electrode portion 11 in FIG. 26. It is sandwiched between.
  • the first end portion 14 has, for example, a shape having a circular portion in plan view and a wedge-shaped portion projecting radially outward from the circular portion.
  • the first end portion 14 is located on the outer periphery from the center in the radial direction of the substantially circular portion in the plan view of the photoelectric conversion layer 3, similarly to the first partition portion 12 and the first connecting portion 13. It is arranged at a close position.
  • the second extending portion 16 is connected to the first end portion 14 and extends outward in the radial direction of the first conductive layer 1 from the first end portion 14 and the first electrode portion 11 adjacent to the first end portion 14. I'm out.
  • the 2nd extension part 16 of this embodiment is a planar view substantially rectangular shape, the shape of the 2nd extension part 16 is not limited to this, Various shapes can be employ
  • the second extending portion 16 is disposed below the first electrode portion 11 located on the lower right side in the drawing in FIG.
  • the 1st extension part 15 and the 2nd extension part 16 are set as the arrangement
  • the left side portion of the first end portion 14 in the drawing coincides with the position of the first extending portion 15 in the left-right direction in the drawing, and the right side portion of the first end portion 14 in the drawing has the second extending portion. A part of the part 16 and the position in the left-right direction in the figure coincide.
  • the plurality of openings 18 penetrate the first conductive layer 1 in the thickness direction.
  • the opening 18 has a rectangular shape whose area is relatively small in a plan view as compared with the first partition portion 12, the first connecting portion 13, the first end portion 14, and the like. This is an example of the size and shape of the opening 18, and the opening 18 may have a larger area in plan view than the first partition 12 or the like, and may have a circular shape or the like.
  • the plurality of openings 18 are disposed radially outward from the centers of the first partition portion 12, the first connecting portion 13, and the first end portion 14 in plan view.
  • the second conductive layer 2 is laminated on the first conductive layer 1 via the photoelectric conversion layer 3. A part of the second conductive layer 2 is in direct contact with the first conductive layer 1.
  • the material of the 2nd conductive layer 2 is not specifically limited, In this embodiment, the 2nd conductive layer 2 consists of metals represented by Al, W, Mo, Mn, and Mg.
  • the second conductive layer 2 is made of Al will be described as an example. Therefore, the second conductive layer 2 is opaque.
  • a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second conductive layer 2 opposite to the support substrate 41.
  • the thickness of the second conductive layer 2 is, for example, 30 nm to 150 nm.
  • FIG. 27 is a plan view showing the second conductive layer 2.
  • the second conductive layer 2 includes a plurality of second electrode portions 21, a plurality of second partition portions 22, a plurality of second connecting portions 23, a second end portion 24, and a plurality of slits 29.
  • the second conductive layer 2 has a substantially circular shape in plan view, but this is an example of the shape of the second conductive layer 2.
  • the shape of the second conductive layer 2 can be set to various shapes.
  • the second electrode part 21, the second partition part 22, the second connecting part 23, and the second end part 24 of the second conductive layer 2 are hatched.
  • the adjacent second electrode portions 21 and the adjacent second electrode portion 21 and the second connecting portion 23 are formed apart from each other, but the slit 29 is formed by separating them. The resulting region is shown.
  • the plurality of second electrode portions 21 are layers in which electrons generated by the photoelectric conversion layer 3 are aggregated, and function as so-called cathode electrodes.
  • the second electrode portion 21 coincides with the first electrode portion 11 in plan view. That is, the second electrode portion 21 of the present embodiment has the arc edge 211 located near the center of the second conductive layer 2 that has a substantially circular shape in plan view. A circular opening in a plan view is formed in the center of the second conductive layer 2 by the arc edges 211 of the six second electrode portions 21.
  • the second electrode portion 21 includes a pair of linear end edges 212 extending radially outward from both ends of the arc end edge 211 and a pair of substantially semicircles that are connected to the straight end edges 212 and recessed inwardly.
  • the portion defined by the shape of the first connecting portion 13 is a boundary for defining the second electrode portion 21 and is not a physical edge formed in the second conductive layer 2. This boundary is referred to as an arc edge 213.
  • the second electrode portion 21 has an arc edge 214 that is located radially outward with respect to the pair of arc edges 213.
  • the arcuate edges 214 of the six second electrode portions 21 constitute the outline of the second conductive layer 2 in plan view.
  • the second electrode portion 21 can be defined with an edge that is recessed inward from the vicinity of the center of the arc edge 214.
  • This inwardly recessed edge is a boundary defined by the shape of the first partition portion 12 of the first conductive layer 1, and is not a physical edge formed in the second conductive layer 2, but this embodiment In the form, this boundary is referred to as an edge for convenience.
  • the edge includes a pair of linear portions 215 inclined with respect to the radial direction and a substantially circular circular portion 216 connected to the linear portions 215 and surrounds the second partition portion 22.
  • the six second electrode portions 21 are arranged concentrically. Adjacent second electrode portions 21 are disposed with a slit 29 therebetween.
  • the plurality of second partition portions 22 are portions that overlap the plurality of first partition portions 12 of the first conductive layer 1 in plan view.
  • the 2nd division part 22 encloses the design display part 35 of the photoelectric converting layer 3 mentioned later in planar view.
  • the second partition section 22 is electrically connected to the first partition section 12 through the design display section 35, and does not function as a power generation electrode in the photoelectric conversion layer 3, like the first partition section 12.
  • the plurality of second partition portions 22 are disposed so as to be surrounded by the plurality of second electrode portions 21, and are more than the center of the second conductive layer 2 that is substantially circular in plan view. It is arranged at a position close to the outer periphery.
  • the second partition portion 22 has, for example, a shape having a substantially circular portion in a plan view and a wedge-shaped portion protruding outward in the radial direction from the substantially circular portion.
  • the plurality of second connecting portions 23 are connected to one of the two adjacent second electrode portions 21 and are adjacent to the other of the two adjacent second electrode portions 21 with the slit 29 interposed therebetween.
  • the second connecting portion 23 is a semicircular shape that is connected to the projecting portion that is partitioned in a semicircular shape by the slit 29 and enters the second electrode portion 21 in plan view. (A portion indicated by an imaginary line in FIG. 27), a circular portion in plan view, and a wedge-shaped portion projecting radially outward from the circular portion. Yes.
  • a semicircular portion of the second connecting portion 23 that enters the inside of the second electrode portion 21 is defined by the first connecting portion 13 of the first conductive layer 1 shown in FIG.
  • the semicircular portion that enters the first electrode portion 11 in the first connecting portion 13 described above is defined by the second connecting portion 23. That is, as understood from FIG. 20, the first connecting portion 13 and the second connecting portion 23 are substantially circular in a plan view.
  • the 2nd connection part 23 includes the design display part 35 of the photoelectric converting layer 3 mentioned later in planar view. In this embodiment, the 2nd connection part 23 is arrange
  • the second end portion 24 corresponds to the first end portion 14 of the first conductive layer 1 in a plan view and is connected to the adjacent second electrode portion 21.
  • the second end portion 24 includes a substantially circular portion in a plan view like the first end portion 14, and a wedge-shaped portion projecting radially outward from the circular portion.
  • the shape has.
  • the second end portion 24 is arranged on the outer periphery rather than the center in the radial direction of the second conductive layer 2 having a substantially circular shape in plan view like the second partition portion 22 and the second connecting portion 23. It is arranged at a close position.
  • the photoelectric conversion layer 3 is sandwiched between the first conductive layer 1 and the second conductive layer 2 and laminated on the support substrate 41.
  • the photoelectric conversion layer 3 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power.
  • the specific configuration of the photoelectric conversion layer 3 is not particularly limited. For example, a bulk heterojunction organic active layer and a hole transport layer stacked on the first conductive layer 1 side with respect to the bulk heterojunction organic active layer are given. It consists of.
  • the photoelectric conversion layer 3 has a circular shape in plan view, but this is an example, and the photoelectric conversion layer 3 can have various shapes.
  • the thickness of the photoelectric conversion layer 3 is, for example, 50 nm to 300 nm.
  • a p-type organic active layer region and an n-type organic active layer region are mixed to form a complex bulk hetero pn junction.
  • the p-type organic active layer region is formed of, for example, P3HT (poly (3-hexylthiophene-2,5diyl)), and the n-type organic active layer region is, for example, PCBM (6,6-phenyl-C61-butyric acid methyl). ester).
  • the hole transport layer is made of, for example, PEDOT: PSS.
  • Examples of materials used to form the photoelectric conversion layer 3 include phthalocyanine (Pc: Phthhalocyanine), zinc phthalocyanine (ZnPc: Zinc- phthalocyanine), Me-Ptcdi (N, N'-dimethyl perylene-3,4,9,10). -dicarboximide) and fullerene (C 60: Buckminster fullerene). These materials are used for vacuum deposition, for example.
  • MDMO-PPV poly [2-methoxy-5- (3,7-dimethyl-octyloxy)]-1,4-phenylene-vinylene
  • PCDTBT poly [N-9'-hepta-decanyl-2,7-carbazole-alt-5,5- (4 ', 7'-di-thienyl-2'1', 3'-b3nzothiadizaole)]
  • PC60BM 6-phenyl-C61-butyric acid methyl ester
  • PC70BM 6-,6-phenyl-C71-butyric acid methyl ester.
  • FIG. 28 is a plan view showing the photoelectric conversion layer 3.
  • the photoelectric conversion layer 3 has a plurality of non-power generation regions 30, a plurality of power generation regions 31, and a plurality of design display portions 35.
  • the boundary between the non-power generation region 30 and the power generation region 31 is indicated by an imaginary line (two-dot chain line) for convenience.
  • the non-penetrating portion of the photoelectric conversion layer 3 is hatched with a plurality of discrete points.
  • the design display part 35 is a part that constitutes a design that appears through the first conductive layer 1 and appears on the exterior.
  • the design which the design display part 35 comprises refers to what can be visually recognized as visually peculiar parts, such as a character, a symbol, and a design, when a user etc. look.
  • the design display unit 35 is configured by a through-hole portion 350.
  • the penetrating part 350 is a part having a mode of penetrating the photoelectric conversion layer 3 in the thickness direction. Such a penetrating portion 350 appears through the first conductive layer 1.
  • the penetrating portion 350 exposes the second conductive layer 2 to the first conductive layer 1 side. That is, a part of the second conductive layer 2 appears on the exterior through the through part 350.
  • a total of twelve penetrating portions 350 represent Roman numerals for specifying time.
  • a total of twelve penetrating portions 350 (design display portions 35) adjacent to the outer side in the radial direction with respect to a total of twelve penetrating portions 350 in the form of Roman numerals are diamond-shaped.
  • a total of 24 penetrating portions 350 (design display portions 35) have a relatively small rectangular shape for specifying the time, and follow the outer periphery of the photoelectric conversion layer 3 having a circular shape in plan view. Are arranged.
  • the power generation region 31 is sandwiched between the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2, and exhibits a photoelectric conversion function. This is a region that contributes to power generation.
  • the shape of the power generation region 31 matches the first electrode part 11 and the second electrode part 21 in plan view. In the present embodiment, the six power generation regions 31 are arranged concentrically.
  • the non-power generation region 30 is a region of the photoelectric conversion layer 3 that does not overlap with the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 in plan view, and the first partition portion 12, the first connecting portion 13, the first end portion 14, the opening 18 and the slit 19 overlap.
  • the first partition portion 12, the first connecting portion 13, and the first end portion 14 are in contact with a part of the second conductive layer 2, and the aggregated holes and electrons are immediately combined.
  • the non-power generation region 30 does not contribute to power generation. That is, a region other than the plurality of power generation regions 31 in the photoelectric conversion layer 3 is a non-power generation region 30.
  • the plurality of non-power generation areas 30 include a plurality of partition areas 32, a plurality of communication areas 33, and end areas 34.
  • the partition region 32 is a region that overlaps the first partition portion 12 of the first conductive layer 1 and the second partition portion 22 of the second conductive layer 2.
  • the partition area 32 has a penetrating part 350 (design display part 35).
  • the penetrating part 350 (design display part 35) included in the partition region 32 represents the Roman numerals described above.
  • the plurality of connection regions 33 are regions sandwiched between the plurality of first connection portions 13 of the first conductive layer 1 and the plurality of second connection portions 23 of the second conductive layer 2. is there.
  • the communication area 33 has a penetrating part 350 (design display part 35).
  • the penetrating part 350 (design display part 35) included in the communication area 33 represents the Roman numerals described above.
  • the end region 34 includes a through portion 350 (design display portion 35) included in the first end portion 14 of the first conductive layer 1 in a plan view, and includes the first conductive layer. Overlapping the first end 14 of the layer 1. The end region 34 overlaps the second end 24 of the second conductive layer 2. The first end portion 14 of the first conductive layer 1 and the second end portion 24 of the second conductive layer 2 are in contact with each other through the through portion 350 of the end region 34.
  • region 34 represents the Roman numeral mentioned above.
  • a region included in the opening 18 of the first conductive layer 1 in the photoelectric conversion layer 3 is a non-power generation region 30.
  • the first extending portion 15 and the second extending portion 16 of the first conductive layer 1 extend radially outward from the photoelectric conversion layer 3 in plan view.
  • the organic thin-film solar cell module A2 has a configuration in which the six power generation regions 31 are connected in series with each other.
  • the connected paths will be described in order.
  • the first extending portion 15 is connected to one first electrode portion 11.
  • the second electrode portion 21 is arranged with respect to the first electrode portion 11 with the power generation region 31 interposed therebetween.
  • the second connecting part 23 connected to the second electrode part 21 is in contact with the first connecting part 13 through the penetrating part 350 of the connecting region 33.
  • the next second electrode part 21 is arranged with the power generation region 31 interposed therebetween.
  • adjacent power generation regions 31 are connected in series with the first communication unit 13, the second communication unit 23, and the communication region 33 interposed therebetween. Therefore, the power generation region 31 on the lower left side in the drawing to the power generation region 31 on the lower right side in the drawing are connected in series.
  • the 2nd end part 24 is connected to the 2nd electrode part 21 which overlaps with the electric power generation area
  • the second end portion 24 is in contact with the first end portion 14 through the through portion 350 of the end region 34.
  • a second extending portion 16 is connected to the first end portion 14.
  • the 1st extension part 15 and the 2nd extension part 16 function as an output terminal of organic thin film solar cell module A2.
  • the first extension part 15 and the second extension part 16 are connected to the drive part 71 in FIG.
  • the passivation film 42 is laminated on the second conductive layer 2 and protects the second conductive layer 2 and the photoelectric conversion layer 3.
  • the passivation film 42 is made of, for example, SiN or SiON.
  • the thickness of the passivation film 42 is, for example, 0.5 ⁇ m to 2.0 ⁇ m. In the present embodiment, the thickness is, for example, about 1.5 ⁇ m. That is, the passivation film 42 is configured to be thicker than the photoelectric conversion layer 3. Thereby, it can prevent that a water, a particle, etc. approach from the exterior to the photoelectric converting layer 3, and can improve the intensity
  • the portion of the passivation film 42 covering the design display portion 35 and the portion of the photoelectric conversion layer 3 covering the portion adjacent to the design display portion 35 are formed flat. ing. Thereby, destruction of the crack etc. which may generate
  • the flat passivation film 42 as described above can be formed, for example, by making the passivation film 42 thick with respect to the photoelectric conversion layer 3 or by a method using CVD described later. Not limited to this.
  • the bonding layer 43 is a layer for bonding the passivation film 42 and the protective layer 44, and is, for example, a resin-based adhesive layer.
  • the protective layer 44 is for protecting the organic thin-film solar cell module A2 from the side opposite to the support substrate 41.
  • the protective layer 44 is preferably made of glass, but other transparent materials that can protect the organic thin film solar cell module A2 can be appropriately employed.
  • the thickness of the protective layer 44 is, for example, 30 ⁇ m to 100 ⁇ m. In the present embodiment, the thickness is, for example, about 50 ⁇ m.
  • FIGS. 22 to 25 are shown upside down. 22 to 25 show a process of generating a cross-sectional structure along the line XXV-XXV of the organic thin film solar cell module A2 shown in FIG.
  • a support substrate 41 is prepared as shown in FIG.
  • an ITO film is formed on one surface of the support substrate 41 by a general method such as sputtering.
  • the first conductive layer 1 is formed by patterning the ITO.
  • the steps shown in FIGS. 29 and 30 may be performed separately or collectively.
  • a patterning technique to ITO for example, a technique using wet etching, a technique using oxygen plasma etching, and a technique using laser patterning are appropriately employed.
  • the first conductive layer 1 is not limited to the above.
  • the first conductive layer 1 may be formed by directly patterning ITO on the support substrate 41 by a technique using nanoimprint.
  • the photoelectric conversion layer 3 is formed.
  • the photoelectric conversion layer 3 is formed by forming an organic film on the support substrate 41 and the first conductive layer 1 by spin coating, and then using oxygen plasma etching and laser patterning to form a desired through-hole 350. This is done by finishing the structure having the (design display part 35).
  • the photoelectric conversion layer 3 is not limited to the above, and an organic film is directly patterned on the support substrate 41 and the first conductive layer 1 by a method such as slit coating, capillary coating, or gravure printing. It may be formed by.
  • the second conductive layer 2 is formed.
  • the second conductive layer 2 is formed, for example, by forming a metal film on the support substrate 41, the first conductive layer 1 and the photoelectric conversion layer 3 using the above-described metal by vacuum heating vapor deposition.
  • the metal film is patterned by etching using, for example, a mask layer.
  • the second conductive layer 2 is formed on the first conductive layer 1 and the photoelectric conversion layer 3.
  • a passivation film 42 is formed by depositing SiN or SiON on the support substrate 41, the first conductive layer 1, the photoelectric conversion layer 3, and the second conductive layer 2 by, for example, a plasma CVD method.
  • the protective layer 44 is bonded to the passivation film 42 using the bonding layer 43.
  • the organic thin film solar cell module A2 is obtained through the above steps.
  • the design display portion 35 is formed on the photoelectric conversion layer 3 so as to be visible through the first conductive layer 1, so that the organic display
  • the design appearing on the appearance can be given by the design display unit 35 without laminating additional members on the thin-film solar cell module A2 or printing the outside.
  • the design display unit 35 is configured by the through portion 350, so that the design can be expressed more clearly.
  • the appearance of the second conductive layer 2 through the through portion 350 allows the design to be clarified by the contrast between the second conductive layer 2 and the photoelectric conversion layer 3.
  • the first electrode portion 11 and the first partitioning portion 12 are separated from each other by the slit 19 in the first conductive layer 1, and the first in a plan view. Since the design display part 35 is formed in the non-power generation region 30 overlapping the partition part 12, when the design display part 35 is configured by the penetrating part 350 penetrating the photoelectric conversion layer 3, the first electrode It is possible to prevent the part 11 and the second electrode part 21 from being unintentionally short-circuited.
  • the adjacent power generation regions 31 in series by providing the first communication unit 13, the second communication unit 23, and the communication region 33.
  • the voltage output from organic thin-film solar cell module A2 can be raised to a desired value.
  • the penetration part 350 included in the communication area 33 is a Roman numeral for specifying the time.
  • the communication region 33 and the penetrating part 350 included therein serve as a region representing a design that is essential when used as a watch while fulfilling the function of connecting a plurality of power generation regions 31 in series. Is.
  • the power generation region 31 at one end and the other end 31 among the plurality of power generation regions 31 connected in series are provided adjacent to each other. Is possible. Moreover, the electric power from the electric power generation area
  • FIG. 33 to 35 show modified examples of the organic thin film solar cell module A2.
  • regions 31 provided in the photoelectric converting layer 3 is one is shown.
  • FIG. 33 is a plan view showing the organic thin-film solar cell module A2 of this modification
  • FIG. 34 is a plan view showing the first conductive layer 1 of this modification
  • FIG. FIG. 36 is a plan view showing a photoelectric conversion layer 3 of the present modification.
  • the first conductive layer 1 has one first electrode part 11, eleven first partition parts 12, a first end part 14, a first extension part 15, and a second extension part 16.
  • the 1st conductive layer 1 does not have the 1st connection part 13 in the example mentioned above.
  • the second conductive layer 2 has one second electrode portion 21, eleven second partition portions 22, and second end portions 24 corresponding to the configuration of the first conductive layer 1.
  • the photoelectric conversion layer 3 has one power generation region 31, eleven partition regions 32, and an end region 34.
  • the power generated by one power generation region 31 is output from the first extension portion 15 and the second extension portion 16.
  • the design which appears in the external appearance can be given by the design display part 35, without laminating
  • a configuration in which a plurality of power generation regions 31 are connected in parallel may be employed instead of the configuration in which one power generation region 31 is provided.
  • the plurality of first electrode portions 11 may be electrically connected to each other
  • the plurality of second electrode portions 21 may be electrically connected to each other.
  • B3 of this embodiment is configured as a so-called electronic computer.
  • the electronic device B3 includes an organic thin film solar cell module A3, a case 61, a drive unit 71, a display unit 74, and an input unit 75.
  • Organic thin-film solar cell module A3 is a power generator for electronic device B3.
  • the case 61 is a thin rectangular member, and houses the organic thin film solar cell module A3, the drive unit 71, the display unit 74, and the input unit 75.
  • the driving unit 71 performs a calculation function by being fed from the organic thin film solar cell module A3. Further, the input signal from the input unit 75 is reflected in the calculation function. In addition, information related to the calculation function is displayed on the display unit 74.
  • the display unit 74 is a part where information related to the calculation function is displayed, and is a liquid crystal display, for example.
  • the input unit 75 is a part where an input for performing a calculation is made, and is composed of, for example, a touch sensor.
  • the design display unit 35 constitutes the input unit 75 in order to visually identify the input unit 75.
  • FIG. 39 shows the organic thin film solar cell module A3 of the present embodiment.
  • the organic thin film solar cell module A3 is configured to output the power generated in one power generation region 31 from the first extension portion 15 and the second extension portion 16.
  • FIG. 40 is a plan view showing the first conductive layer 1 of the present embodiment.
  • FIG. 41 is a plan view showing the second conductive layer 2 of the present embodiment.
  • FIG. 42 is a plan view showing the photoelectric conversion layer 3 of the present embodiment.
  • a rectangular opening 18 is formed in the first conductive layer 1, a rectangular opening 28 is formed in the second conductive layer 2, and a rectangular opening 38 is formed in the photoelectric conversion layer 3. Yes.
  • the opening 18, the opening 28, and the opening 38 are for representing the display unit 74 in appearance. Note that the opening 18 and the opening 28 are slightly larger than the opening 38. As a result, a region included in the opening 18 and the opening 28 in the photoelectric conversion layer 3 is a non-power generation region 30.
  • the photoelectric conversion layer 3 has a plurality of penetrating portions 350 (design display portions 35).
  • Each of the plurality of penetrating portions 350 provided in the lower part of the figure represents a number or an arithmetic symbol, and is arranged so as to correspond to each part of the input unit 75.
  • the first conductive layer 1 is formed with a plurality of openings 18 positioned below in the drawing. These openings 18 are sized and shaped to contain a plurality of 350 representing numbers and arithmetic symbols. As a result, a region included in these openings 18 in the photoelectric conversion layer 3 is a non-power generation region 30.
  • penetrating portions 350 are provided on the upper right side in the drawing. These penetrating portions 350 represent characters, symbols, or designs.
  • the penetrating portion 350 having such an aspect is used, for example, to represent a company name or a product name.
  • the first conductive layer 1 has a first end portion 14 on the upper right side in the drawing.
  • the plurality of through portions 350 on the upper right side of the photoelectric conversion layer 3 described above are included in the first end portion 14 in plan view.
  • the region of the photoelectric conversion layer 3 that overlaps the first end portion 14 is defined as the end region 34.
  • a region of the second conductive layer 2 that overlaps the first end 14 is a second end 24.
  • the design appearing on the appearance can be given by the design display unit 35 without laminating an additional member on the organic thin-film solar cell module A3 or printing on the outside. .
  • FIG. 43 shows an organic thin-film solar cell module according to the fourth embodiment of the present invention.
  • the organic thin-film solar cell module A4 of this embodiment includes a structure in which the design display portion 35 of the photoelectric conversion layer 3 is configured by a thin portion 351.
  • the thin portion 351 is a portion that is thinner than the periphery.
  • the level difference caused by the provision of the thin portion 351 realizes a shape that can be visually recognized, and constitutes a design that the design display unit 35 should display.
  • the surface of the photoelectric conversion layer 3 on the support substrate 41 side is flat, and a step due to the thin portion 351 is provided on the side opposite to the support substrate 41.
  • the 2nd conductive layer 2 is formed in the support substrate 41, and the 1st conductive layer 1 is laminated
  • sunlight comes from the lower side in the figure.
  • the design which appears in the external appearance by the design display part 35 can be provided without laminating
  • the organic thin film solar cell module and the electronic device according to the present invention are not limited to the above-described embodiments.
  • the specific configuration of each part of the organic thin-film solar cell module and the electronic device according to the present invention can be varied in design in various ways.
  • [Appendix 1A] A transparent first conductive layer; A second conductive layer; A photoelectric conversion layer comprising an organic thin film sandwiched between the first conductive layer and the second conductive layer, The said photoelectric conversion layer is an organic thin-film solar cell module which has a 1 or more design display part which comprises the design which appears through the said 1st conductive layer and appears on an external appearance.
  • [Appendix 2A] The organic thin-film solar cell module according to Appendix 1A, comprising a transparent support substrate on which the first conductive layer is laminated.
  • [Appendix 3A] The organic thin-film solar cell module according to appendix 1A or 2A, comprising a passivation film that covers the second conductive layer.
  • the said passivation film is an organic thin-film solar cell module of Additional remark 3A which has covered the said design display part.
  • Appendix 5A The organic thin-film solar cell module according to appendix 4A, wherein the passivation film is formed so that a portion covering the design display portion and a portion covering the portion adjacent to the design display portion in the photoelectric conversion layer are formed flat.
  • Appendix 6A The thickness of the said passivation film is an organic thin-film solar cell module in any one of appendix 3A thru
  • [Appendix 7A] The organic thin-film solar cell module according to any one of appendices 3A to 6A, comprising a protective layer laminated on the passivation film.
  • [Appendix 8A] The organic thin film solar cell module according to appendix 7A, comprising a bonding layer that bonds the passivation film and the protective layer.
  • [Appendix 9A] The organic thin film solar cell module according to any one of Supplementary Notes 1A to 8A, wherein the first conductive layer is made of ITO.
  • [Appendix 10A] The organic thin-film solar cell module according to any one of Supplementary Notes 1A to 9A, wherein the second conductive layer is made of metal.
  • the said design display part is an organic thin-film solar cell module in any one of additional remarks 1A thru
  • the said design display part is an organic thin-film solar cell module in any one of additional remarks 1A thru
  • the first conductive layer has a first electrode portion
  • the second conductive layer has a second electrode portion that coincides with the first electrode portion in plan view
  • the organic thin-film solar cell module according to appendix 12A wherein the photoelectric conversion layer includes a power generation region that is sandwiched between the first electrode portion and the second electrode portion and contributes to power generation by exhibiting a photoelectric conversion function.
  • the photoelectric conversion layer has a non-power generation region that does not overlap the first electrode portion and the second electrode portion in plan view and does not contribute to power generation.
  • [Appendix 16A] The organic thin-film solar cell module according to appendix 15A, wherein the first conductive layer includes a first partition part that includes the design display part in a plan view and is surrounded by a slit that penetrates in the thickness direction.
  • [Appendix 17A] The organic thin-film solar cell module according to appendix 16A, wherein the non-power generation region of the photoelectric conversion layer has a partition region that is a region overlapping the first partition portion of the first conductive layer.
  • [Appendix 18A] The organic thin-film solar cell module according to appendix 17A, wherein the first conductive layer and the second conductive layer are in contact with each other through the design display portion included in the partition region of the photoelectric conversion layer.
  • the first conductive layer has two first electrode portions adjacent to each other across a slit
  • the second conductive layer has two second electrode portions that coincide with the two first electrode portions in plan view
  • the organic thin-film solar cell module according to any one of appendices 15A to 18A, wherein the photoelectric conversion layer has two power generation regions sandwiched between the two first electrode portions and the two second electrode portions.
  • [Appendix 20A] The organic thin-film solar cell module according to appendix 19A, wherein the two power generation regions are connected in series with each other.
  • [Appendix 21A] The organic thin film solar cell module according to appendix 19A, wherein the two power generation regions are connected in parallel to each other.
  • the first conductive layer includes a first connecting portion that is connected to one of the two first electrode portions and that is adjacent to the other of the two first electrode portions with the slit interposed therebetween.
  • the second conductive layer is connected to the second electrode portion that coincides in plan view with the other of the two first electrode portions, and is adjacent to the other of the two second electrode portions with the slit interposed therebetween. , Having a second communication part in contact with the first communication part,
  • the organic thin-film solar cell module according to appendix 20A, wherein the non-power generation region of the photoelectric conversion layer includes a communication region sandwiched between the first communication unit and the second communication unit.
  • the contact area includes the design display portion, The organic thin-film solar cell module according to appendix 22A, wherein the first contact portion and the second contact portion are in contact with each other through the design display portion included in the contact region.
  • the first conductive layer has a plurality of the first electrode portions and the first connecting portions arranged concentrically
  • the second conductive layer has a plurality of the second electrode portions and the second connecting portions arranged concentrically
  • the organic thin-film solar cell module according to Appendix 23A wherein the photoelectric conversion layer includes a plurality of the power generation regions and a plurality of the connection regions arranged concentrically.
  • the first conductive layer has a first extending portion that extends from the first electrode portion of any one of the first electrode portions A to the outside of the photoelectric conversion layer in a plan view.
  • the organic thin-film solar cell module according to any one of 15A to 24A.
  • the first conductive layer has a first end sandwiched between the first electrode part connected to the first extension part and the first electrode part adjacent to the first electrode part via a slit.
  • the photoelectric conversion layer includes an end region that includes the design display unit included in the first end in a plan view and overlaps the first end,
  • the second conductive layer coincides with the first end portion in a plan view and is connected to the adjacent second electrode portion, and is in contact with the first end portion through the design display portion in the end region.
  • Appendix 27A The organic thin-film solar cell module according to appendix 26A, wherein the first conductive layer has a second extending portion that extends outward from the photoelectric conversion layer in a plan view from the first end portion.
  • the organic thin-film solar cell module according to Supplementary Note 30A wherein the design display unit included in the opening represents a graphic for specifying time.
  • Appendix 32A An organic thin film solar cell module according to any one of Supplementary Notes 1A to 31A; A drive unit driven by feeding from the organic thin film solar cell module; An electronic device.
  • Appendix 33A Comprising a long hand and a short hand driven by the drive unit; The electronic device according to attachment 32A, configured as a timepiece.
  • the drive unit has a calculation function, A display unit for displaying a calculation result by the drive unit; The electronic device according to attachment 32A, configured as an electronic computer.
  • “transparent” is defined as having a transmittance of about 50% or more. “Transparent” is also used to mean colorless and transparent to visible light. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.
  • the electronic device B5 of this embodiment includes an organic thin film solar cell module A5, an organic thin film solar cell module A6, a case 61, a control unit 701, a display unit 702, an input unit 703, a microphone 704, a speaker 705, a wireless communication unit 706, and a battery. 707 is configured as a portable telephone terminal.
  • the case 61 accommodates other components of the electronic device B5 and is made of a material such as metal, resin, or glass.
  • FIG. 44 is a plan view showing organic thin-film solar cell modules A5 and A6 and electronic equipment B5 using them.
  • FIG. 45 is a bottom view showing the organic thin-film solar cell modules A5 and A6 and the electronic device B5.
  • FIG. 46 is a schematic sectional view taken along line XLVI-XLVI of FIG. 47 is an enlarged cross-sectional view of a main part taken along the line XLVII-XLVII in FIG.
  • FIG. 48 is a system configuration diagram showing the electronic apparatus B5. In FIG. 46, only the case 61, the organic thin film solar cell module A5, the organic thin film solar cell module A6, the control unit 701, the display unit 702, and the battery 707 are schematically shown for convenience of understanding.
  • Organic thin film solar cell module A5 and organic thin film solar cell module A6 are power supply modules in electronic device B5, and convert light such as sunlight into electric power. A specific configuration will be described later.
  • the control unit 701 corresponds to an example of a driving unit in the present invention, and is driven by power feeding from the organic thin film solar cell module A5 and the organic thin film solar cell module A6. Note that the control unit 701 may be directly supplied with power from the organic thin film solar cell module A5 and the organic thin film solar cell module A6, and power from the organic thin film solar cell module A5 and the organic thin film solar cell module A6 is supplied to the battery 707. After being charged once, the battery 707 may be driven by power feeding.
  • the control unit 701 includes, for example, a CPU, a memory, an interface, and the like.
  • the display unit 702 is for displaying various types of information on the external appearance of the electronic device B5.
  • the display unit 702 is, for example, a liquid crystal display panel or an organic EL display panel. In the present embodiment, the display unit 702 displays information on the exterior through the organic thin film solar cell module A5.
  • the input unit 703 is for outputting a user operation as an electrical signal to the control unit 701.
  • the input unit 703 is a touch panel laminated on the display unit 702, for example. Note that the display unit 702 and the input unit 703 may be configured integrally.
  • the microphone 704 is a device that converts a user's voice into an electrical signal.
  • the speaker 705 is a device that outputs the voice of the other party and various notification sounds.
  • the wireless communication unit 706 is a device that performs bidirectional wireless communication conforming to the wireless communication standard.
  • the battery 707 is a device that stores electric power for driving the electronic device B5.
  • the battery 707 is configured to be appropriately charged / discharged.
  • the battery 707 is charged by feeding from commercial power using an adapter (not shown) or feeding from the organic thin film solar cell module A5 and the organic thin film solar cell module A6.
  • the organic thin film solar cell module A5 and the organic thin film solar cell module A6 include the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3, the support substrate 41, the passivation film 42, the protective resin layer 45, and the bypass conductive portion 5. I have.
  • the organic thin-film solar cell module A5 and the organic thin-film solar cell module A6 are rectangular in plan view, but this is an example, and each can have various shapes.
  • the organic thin film solar cell module A5 and the organic thin film solar cell module A6 are common except for a part of each other. In the following, first, the organic thin film solar cell module A5 will be described.
  • FIG. 49 is an exploded perspective view of a main part showing the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3, the support substrate 41, and the protective resin layer 45 in the organic thin film solar cell module A5.
  • the support substrate 41 is indicated by an imaginary line (two-dot chain line).
  • FIG. 50 is a plan view showing the first conductive layer 1 of the organic thin film solar cell module A5.
  • FIG. 51 is a plan view showing the photoelectric conversion layer 3 of the organic thin film solar cell module A5.
  • FIG. 52 is a plan view showing the second conductive layer 2 of the organic thin film solar cell module A5.
  • FIG. 53 is a plan view showing the protective resin layer 45 and the bypass conductive portion 5 of the organic thin-film solar cell module A5.
  • the support substrate 41 is a member that becomes a base of the organic thin film solar cell module A5.
  • the support substrate 41 is made of, for example, transparent glass or resin.
  • the thickness of the support substrate 41 is, for example, 0.05 mm to 2.0 mm.
  • the first conductive layer 1 is formed on the support substrate 41.
  • the first conductive layer 1 is transparent and is made of ITO in this embodiment.
  • the first conductive layer 1 includes a first electrode portion 11, a first end portion 14, a first extension portion 15, a second extension portion 16, a plurality of openings 18 and slits 19. And a third end edge 101 and an extending portion 103.
  • the first conductive layer 1 has a substantially rectangular shape in plan view, but this is an example of the shape of the first conductive layer 1.
  • the shape of the first conductive layer 1 can be set to various shapes.
  • the thickness of the first conductive layer 1 is, for example, 100 nm to 300 nm.
  • the first electrode portion 11, the first end portion 14, the first extension portion 15, and the second extension portion 16 are hatched.
  • the first electrode portion 11 is a layer in which holes generated by the photoelectric conversion layer 3 are aggregated, and functions as a so-called anode electrode. In the present embodiment, most of the first conductive layer 1 is a single first electrode portion 11.
  • the first extending portion 15 is a portion extending from the first electrode portion 11 to the outside of the photoelectric conversion layer 3 in plan view.
  • the boundary between the first electrode portion 11 and the first extension portion 15 is indicated by an imaginary line (two-dot chain line).
  • the first end portion 14 is a portion separated from the first electrode portion 11 by the slit 19.
  • the first end portion 14 has, for example, a circular shape in plan view.
  • the first end portion 14 has a shape in which a substantially circular portion and a rectangular portion are combined.
  • the second extending portion 16 extends from the first end portion 14 to the outside of the photoelectric conversion layer 3 in plan view.
  • the boundary between the first end portion 14 and the second extension portion 16 is indicated by an imaginary line (two-dot chain line).
  • the first extending portion 15 and the second extending portion 16 are arranged adjacent to each other.
  • the plurality of openings 18 are openings that penetrate the first conductive layer 1 in the thickness direction.
  • two openings 18 are provided.
  • the upper opening 18 in FIG. 50 is provided to make the speaker 705 function, for example.
  • the largest opening 18 in the center in the figure is provided to display the information displayed by the display unit 702 on the appearance.
  • the third edge 101 is an edge that defines the central opening 18 in the drawing.
  • the third end edge 101 is an end edge surrounding the opening 18 from four directions, and has a rectangular shape in plan view.
  • the third end edge 101 is not limited to a shape surrounding the opening 18 from four directions.
  • the third end edge 101 may be adjacent to the opening 18 from three directions so that the opening 18 opens outward from the first electrode portion 11 in plan view.
  • the third edge 101 may be adjacent to the opening 18 from two or only one side.
  • the support substrate 41 is exposed from the region adjacent to the third edge 101, that is, from the center 18 in the drawing.
  • the third edge 101 is an inner edge of a portion of the first conductive layer 1 that extends from a second edge 451 of a protective resin layer 45 to be described later and a first edge 421 of the passivation film 42. .
  • the extending portion 103 is a portion that extends outward from the passivation film 42 and the protective resin layer 45. In the present embodiment, the extending portion 103 is provided on substantially the entire outer peripheral edge of the first conductive layer 1.
  • the second conductive layer 2 is laminated on the first conductive layer 1 via the photoelectric conversion layer 3. A part of the second conductive layer 2 is in direct contact with the first conductive layer 1.
  • the material of the 2nd conductive layer 2 is not specifically limited, In this embodiment, the 2nd conductive layer 2 consists of metals represented by Al, W, Mo, Mn, and Mg.
  • the second conductive layer 2 is not transparent.
  • a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second conductive layer 2 opposite to the support substrate 41.
  • the thickness of the second conductive layer 2 is, for example, 30 nm to 150 nm.
  • the second conductive layer 2 has a second electrode portion 21, a second end portion 24, and a plurality of openings 28.
  • the second conductive layer 2 has a substantially rectangular shape in plan view, but this is an example of the shape of the second conductive layer 2.
  • the shape of the second conductive layer 2 can be set to various shapes. In FIG. 52, the second electrode portion 21 and the second end portion 24 are hatched.
  • the second electrode portion 21 is a layer in which electrons generated by the photoelectric conversion layer 3 are collected, and functions as a so-called cathode electrode.
  • the second electrode portion 21 coincides with the first electrode portion 11 in plan view. In the present embodiment, most of the second conductive layer 2 is the second electrode portion 21.
  • the second end portion 24 coincides with the first end portion 14 of the first conductive layer 1 in plan view and is connected to the second electrode portion 21.
  • the shape of the second end portion 24 is indicated by an imaginary line (two-dot chain line).
  • the second end portion 24 is a combination of a substantially circular portion in plan view and a rectangular portion in plan view.
  • the plurality of openings 28 are openings that penetrate the second conductive layer 2 in the thickness direction.
  • two openings 28 are provided.
  • the upper opening 28 in FIG. 52 is provided, for example, to make the speaker 705 function.
  • the largest opening 28 in the center in the figure is provided to display the information displayed by the display unit 702 on the appearance.
  • the fourth inward retracting edge 201 is an edge that defines the central opening 28 in the drawing.
  • the fourth inward retracting edge 201 is an edge that surrounds the opening 28 from four directions and has a rectangular shape in plan view.
  • the fourth inward retracting edge 201 is not limited to a shape surrounding the opening 28 from four directions.
  • the fourth inward retracting edge 201 may be configured such that the opening 28 is opened outward from the second electrode portion 21 in plan view by adjoining the opening 28 from three directions.
  • the fourth inward retracting edge 201 may be adjacent to the opening 28 from two or only one side. As shown in FIG. 47, the fourth inward retracting edge 201 is retracted inward (opposite to the direction extending into the opening 18) from the third end edge 101.
  • the fourth outer retracting edge 202 is inward in a plan view than a first outer edge 422 of a passivation film 42 to be described later and a second outer edge 452 of the protective resin layer 45. It is retracted (to the right in FIG. 47).
  • the fourth outward retracting edge 202 has an annular shape in plan view.
  • the photoelectric conversion layer 3 is sandwiched between the first conductive layer 1 and the second conductive layer 2 and laminated on the support substrate 41.
  • the photoelectric conversion layer 3 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power.
  • the specific configuration of the photoelectric conversion layer 3 is not particularly limited. For example, a bulk heterojunction organic active layer and a hole transport layer stacked on the first conductive layer 1 side with respect to the bulk heterojunction organic active layer are given. It consists of.
  • the photoelectric conversion layer 3 has a rectangular shape in plan view, but this is an example, and the photoelectric conversion layer 3 can have various shapes.
  • the thickness of the photoelectric conversion layer 3 is, for example, 50 nm to 300 nm.
  • a p-type organic active layer region and an n-type organic active layer region are mixed to form a complex bulk hetero pn junction.
  • the p-type organic active layer region is formed of, for example, P3HT (poly (3-hexylthiophene-2,5diyl)), and the n-type organic active layer region is, for example, PCBM (6,6-phenyl-C61-butyric acid methyl). ester).
  • the hole transport layer is made of, for example, PEDOT: PSS.
  • Examples of materials used to form the photoelectric conversion layer 3 include phthalocyanine (Pc: Phthhalocyanine), zinc phthalocyanine (ZnPc: Zinc- phthalocyanine), Me-Ptcdi (N, N'-dimethyl perylene-3,4,9,10). -dicarboximide) and fullerene (C 60: Buckminster fullerene). These materials are used for vacuum deposition, for example.
  • MDMO-PPV poly [2-methoxy-5- (3,7-dimethyl-octyloxy)]-1,4-phenylene-vinylene
  • PCDTBT poly [N-9'-hepta-decanyl-2,7-carbazole-alt-5,5- (4 ', 7'-di-thienyl-2'1', 3'-b3nzothiadizaole)]
  • PC60BM 6-phenyl-C61-butyric acid methyl ester
  • PC70BM 6-,6-phenyl-C71-butyric acid methyl ester.
  • the photoelectric conversion layer 3 includes a non-power generation region 30, a power generation region 31, a design display unit 35, a plurality of openings 38, a fifth inner retraction edge 301, and a fifth outer retraction edge 302.
  • the non-power generation region 30 and the power generation region 31 are hatched with a plurality of discrete points.
  • the design display part 35 is a part that constitutes a design that appears through the first conductive layer 1 and appears on the exterior.
  • the design which the design display part 35 comprises refers to what can be visually recognized as visually peculiar parts, such as a character, a symbol, and a design, when a user etc. look.
  • the design display unit 35 represents an annular shape.
  • the design display unit 35 is configured by a through-hole portion 350.
  • the penetrating part 350 is a part having a mode of penetrating the photoelectric conversion layer 3 in the thickness direction. Such a penetrating portion 350 appears through the first conductive layer 1.
  • the penetrating portion 350 exposes the second conductive layer 2 to the first conductive layer 1 side. That is, a part of the second conductive layer 2 appears on the exterior through the through part 350.
  • the power generation region 31 is a region that is sandwiched between the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 and contributes to power generation by exhibiting a photoelectric conversion function.
  • the shape of the power generation region 31 matches the first electrode part 11 and the second electrode part 21 in plan view.
  • the non-power generation region 30 is a region of the photoelectric conversion layer 3 that does not overlap the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 in plan view. 1 overlaps the first end 14 of the first. The first end portion 14 is in contact with the second end portion 24 of the second conductive layer 2, and the aggregated holes and electrons are immediately combined. For this reason, the non-power generation region 30 does not contribute to power generation. That is, a region other than the plurality of power generation regions 31 in the photoelectric conversion layer 3 is a non-power generation region 30.
  • the non-power generation region 30 is an end region 34.
  • the end region 34 has a penetrating portion 350 (design display portion 35).
  • the end region 34 includes a through portion 350 (design display portion 35) included in the first end portion 14 of the first conductive layer 1 in plan view, and overlaps the first end portion 14 of the first conductive layer 1. ing.
  • the end region 34 overlaps the second end 24 of the second conductive layer 2.
  • the first end portion 14 of the first conductive layer 1 and the second end portion 24 of the second conductive layer 2 are in contact with each other through the through portion 350 of the end region 34.
  • the plurality of openings 38 are openings that penetrate the photoelectric conversion layer 3 in the thickness direction.
  • two openings 38 are provided.
  • the upper opening 38 in FIG. 51 is provided, for example, to make the speaker 705 function.
  • the largest opening 38 in the center in the drawing is provided to display the information displayed by the display unit 702 on the appearance.
  • the fifth inward retracting edge 301 is an edge that defines the central opening 38 in the drawing.
  • the fifth inward retracting edge 301 is an edge that surrounds the opening 38 from four directions and has a rectangular ring shape in plan view.
  • the fifth inward retracting edge 301 is not limited to a shape surrounding the opening 38 from four directions.
  • the fifth inward retracting edge 301 may be configured such that the opening 38 is opened outward from the power generation region 31 in a plan view by adjoining the opening 38 from three directions.
  • the fifth inward retracting edge 301 may be provided in two or only one with respect to the opening 38. Further, as shown in FIG. 47, the fifth inward retracting edge 301 is retracted inward (opposite to the direction extending into the opening 18) than the third end edge 101.
  • the fifth outer retreat end edge 302 is inward in a plan view than a first outer end edge 422 of a passivation film 42 to be described later and a second outer end edge 452 of the protective resin layer 45. It is retracted (to the right in FIG. 47).
  • the fifth outward retracting edge 302 is annular in plan view.
  • the first extending portion 15 is connected to the first electrode portion 11. Further, the second end portion 24 is connected to the second electrode portion 21. The second end portion 24 is in contact with the first end portion 14 through the through portion 350 of the end region 34. A second extending portion 16 is connected to the first end portion 14.
  • the 1st extension part 15 and the 2nd extension part 16 function as an output terminal of organic thin film solar cell module A5.
  • the passivation film 42 is laminated on the second conductive layer 2 and protects the second conductive layer 2 and the photoelectric conversion layer 3.
  • the passivation film 42 is made of, for example, SiN or SiON.
  • the thickness of the passivation film 42 is, for example, 0.5 ⁇ m to 2.0 ⁇ m. In the present embodiment, the thickness is, for example, about 1.5 ⁇ m.
  • the protective resin layer 45 is a layer that covers the passivation film 42.
  • the protective resin layer 45 is made of, for example, an ultraviolet curable resin.
  • the thickness of the protective resin layer 45 is, for example, 3 ⁇ m to 20 ⁇ m. In the present embodiment, the thickness is, for example, about 10 ⁇ m.
  • the protective resin layer 45 has a plurality of openings 458, a second end edge 451, and a second outer end edge 452. In FIG. 53, the protective resin layer 45 is hatched.
  • the plurality of openings 458 is a mode in which a part of the protective resin layer 45 is removed, and penetrates the protective resin layer 45.
  • two openings 458 are provided.
  • the upper opening 458 in the drawing is provided to allow the speaker 705 to function, for example.
  • the largest opening 458 in the center in the drawing is provided to display the information displayed by the display unit 702 on the appearance.
  • the second edge 451 is an edge that defines the central opening 458 in the drawing.
  • the second end edge 451 is an end edge that surrounds the opening 458 from four directions, and has a rectangular ring shape in plan view.
  • the second end edge 451 is not limited to a shape surrounding the opening 458 from four sides.
  • the second edge 451 may be adjacent to the opening 458 from three directions, so that the opening 458 opens outward from the protective resin layer 45 in plan view.
  • the second end edge 451 may be provided in two or only one with respect to the opening 458.
  • the second outer end edge 452 is located on the opposite side of the second end edge 451 across at least a part of the photoelectric conversion layer 3 in plan view, and in this embodiment, the outer peripheral end of the protective resin layer 45. It is an edge.
  • the passivation film 42 has a first end edge 421 and a first outer end edge 422.
  • the first end edge 421 coincides with the second end edge 451 in plan view. In the present embodiment, the first end edge 421 forms a surface continuous with the second end edge 451.
  • the first outer end edge 422 coincides with the second outer end edge 452 in plan view. In the present embodiment, the first outer end edge 422 forms a surface that is continuous with the second outer end edge 452.
  • a part of the support substrate 41 is exposed as an exposed region 411 from an opening 458 that is a region surrounded by the second end edge 451 and the first end edge 421.
  • the exposed region 411 is not covered with the first conductive layer 1 or the like, and the surface of the support substrate 41 is directly exposed.
  • the bypass conductive portion 5 is for configuring a path having a lower resistance than the first conductive layer 1 for collecting holes that have reached the first conductive layer 1.
  • the bypass conductive portion 5 includes two bus bar portions 51, a plurality of connecting portions 52, and two pole collecting portions 53.
  • the bypass conductive portion 5 is made of a material having a resistance lower than that of the first conductive layer 1 and contains, for example, Ag or carbon.
  • one bus bar portion 51 covers the second end edge 451 and the first end edge 421 over the entire length.
  • the bus bar portion 51 covers a portion of the first conductive layer 1 located between the third end edge 101 and the first end edge 421 (second end edge 451). Further, the inner edge of the bus bar portion 51 coincides with the third edge 101 in plan view.
  • the other bus bar portion 51 covers the second outer end edge 452 and the first outer end edge 422 over the entire length.
  • the bus bar portion 51 covers the extending portion 103 of the first conductive layer 1. With such a configuration, each of the two bus bar portions 51 is electrically connected to the first conductive layer 1.
  • the plurality of connecting portions 52 are portions formed on the protective resin layer 45 and connect the inner bus bar portion 51 in FIG. 53 and the outer connecting portion 52 in the drawing.
  • One of the two current collectors 53 is electrically connected to the first conductive layer 1, and the other is electrically connected to the second conductive layer 2.
  • FIG. 54 is a plan view showing the first conductive layer 1 of the organic thin-film solar cell module A6.
  • FIG. 55 is a plan view showing the photoelectric conversion layer 3 of the organic thin film solar cell module A6.
  • FIG. 56 is a plan view showing the second conductive layer 2 of the organic thin film solar cell module A6.
  • FIG. 57 is a plan view showing the protective resin layer 45 and the bypass conductive portion 5 of the organic thin-film solar cell module A6.
  • the organic thin film solar cell module A6 is not provided with the opening 18, the opening 28, the opening 38, the opening 458 and the like for showing the display portion 702 in appearance. For this reason, the 3rd edge 101, the 4th inward retracting edge 201, the 5th inward retracting edge 301, the 1st end edge 421, and the 2nd end edge 451 are not provided.
  • the bypass conductive portion 5 has a bus bar portion 51 along the outer periphery, and does not have a connecting portion 52.
  • the photoelectric conversion layer 3 is provided with a plurality of through portions 350 (35).
  • Each of these penetrating portions 350 represents an alphabet.
  • the point where the first end portion 14 of the first conductive layer 1 and the second end portion 24 of the second conductive layer 2 are in contact with each other using the through portion 350 is the same as that of the organic thin film solar cell module A5. .
  • FIG. 47 is shown upside down.
  • 58 to 65 show a process of generating a cross-sectional structure taken along line XLVII-XLVII of the electronic apparatus B5 shown in FIG.
  • a support substrate 41 is prepared as shown in FIG.
  • the first conductive layer 1 made of ITO is formed on one surface of the support substrate 41 by a general method such as sputtering.
  • patterning is performed on the ITO to form patterns such as openings 18 and slits 19.
  • a patterning technique to ITO for example, a technique using wet etching, a technique using oxygen plasma etching, and a technique using laser patterning are appropriately employed.
  • the first conductive layer 1 is not limited to the above.
  • the first conductive layer 1 may be formed by directly patterning ITO on the support substrate 41 by a technique using nanoimprint.
  • the photoelectric conversion layer 3 is formed by, for example, depositing an organic film on the support substrate 41 and the first conductive layer 1 by spin coating, and then using oxygen plasma etching and laser patterning to perform fifth inward retraction. This is done by finishing the structure having an end edge 301, a fifth outward retracting end edge 302, an opening 38, and a penetrating part 350 (design display part 35).
  • the photoelectric conversion layer 3 is not limited to the above, and an organic film is directly patterned on the support substrate 41 and the first conductive layer 1 by a method such as slit coating, capillary coating, or gravure printing. It may be formed by.
  • the second conductive layer 2 is formed.
  • the second conductive layer 2 is formed, for example, by forming a metal film on the support substrate 41, the first conductive layer 1 and the photoelectric conversion layer 3 using the above-described metal by vacuum heating vapor deposition.
  • the metal film is patterned by etching using, for example, a mask layer. By this patterning, the second conductive layer 2 having the fourth inner withdrawal edge 201 and the fourth outer withdrawal edge 202 is formed on the photoelectric conversion layer 3.
  • a passivation film 42 is formed.
  • the passivation film 42 is formed by forming a film such as SiN or SiON on the support substrate 41, the first conductive layer 1, the photoelectric conversion layer 3, and the second conductive layer 2 by plasma CVD, for example.
  • a protective resin layer 45 is formed.
  • the protective resin layer 45 is formed by applying a liquid resin material containing, for example, an ultraviolet curable resin on the passivation film 42 by screen printing and irradiating it with ultraviolet rays. Thereby, the protective resin layer 45 having the second end edge 451 and the second outer end edge 452 is obtained.
  • the passivation film 42 is patterned using the protective resin layer 45 as a mask.
  • This patterning is performed, for example, by wet etching using hydrofluoric acid containing 0.55% to 4.5% hydrogen fluoride.
  • hydrofluoric acid hardly dissolves the protective resin layer 45 made of an ultraviolet curable resin, but selectively dissolves the passivation film 42 made of SiN or the like.
  • hydrofluoric acid hardly dissolves the first conductive layer 1 made of ITO or the like.
  • the first end edge 421 and the first outer end edge 422 are formed in the passivation film 42.
  • the first edge 421 coincides with the second edge 451 in plan view.
  • the first edge 421 and the second edge 451 form a continuous surface.
  • the first outer end edge 422 coincides with the second outer end edge 452 in plan view.
  • the first outer end edge 422 and the second outer end edge 452 form a continuous surface.
  • the bypass conductive portion 5 is formed by, for example, applying a paste containing Ag or carbon and then curing the paste by a technique such as drying.
  • the first conductive layer 1 is patterned. This patterning is performed, for example, using aqua regia in which concentrated hydrochloric acid and concentrated nitric acid are mixed at a ratio of 3: 1. By this patterning, portions of the first conductive layer 1 exposed from the bypass conductive portion 5 and the protective resin layer 45 are selectively removed. As a result, the third edge 101 and the like are formed in the first conductive layer 1.
  • an organic thin film solar cell module A5 is obtained.
  • the organic thin film solar cell module A6 can be manufactured in the same manner.
  • the support substrate 41 is exposed in a region adjacent to the second end edge 451 and the second outer end edge 452. In this portion, the passivation film 42 and the protective resin layer 45 are not formed. Therefore, it is possible to finish this portion more transparent, and the display portion 702 can be expressed more clearly.
  • the first conductive layer 1 is not formed on the support substrate 41 except for a small area covered with the bus bar portion 51 among the areas adjacent to the second edge 451 and the first edge 421.
  • the first conductive layer 1 is made of ITO, the first conductive layer 1 is visually recognized as being slightly colored depending on how light hits. In the present embodiment, it is possible to finish the region for displaying the display unit 702 in an even more transparent manner, and a more beautiful appearance can be realized.
  • the fifth inward retracting edge 301 of the photoelectric conversion layer 3 and the fourth inward retracting edge 201 of the second conductive layer 2 are separated from the first end edge 421 and the second end edge 451, thereby The two conductive layers 2 and the photoelectric conversion layer 3 can be prevented from being unduly conducted with the bypass conductive portion 5. Further, since the passivation film 42 is interposed between the fourth inner retracting edge 201 and the fifth inner retracting edge 301 and the first end edge 421 and the second end edge 451, the second conductive layer 2 and the photoelectric conversion layer 3 and the bus bar portion 51 of the bypass conductive portion 5 can be more reliably prevented from short-circuiting.
  • the passivation film 42 having the same shape as that of the protective resin layer 45 can be formed by patterning the passivation film 42 using the protective resin layer 45 as a mask. That is, if the protective resin layer 45 is formed using a material excellent in shape formation such as an ultraviolet curable resin, the passivation film 42 made of a material not necessarily excellent in shape formation can be finished in a desired shape.
  • the protective resin layer 45 may be removed after the passivation film 42 is formed. However, when the protective resin layer 45 is left, the effect of preventing intrusion of moisture and particles into the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3 and the like, and the organic thin film solar cell module A5 The effect of improving strength can be expected.
  • the bypass conductive portion 5 By providing the bypass conductive portion 5, the holes diffused in the first conductive layer 1 can be guided to the collector portion 53 via the bus bar portion 51. Since the bypass conductive portion 5 has a lower resistance than the first conductive layer 1, it is possible to prevent power from being converted into heat. This reduces power generation loss of the organic thin film solar cell module A5 and the organic thin film solar cell module A6 and is suitable for power generation by the power generation region 31 having a larger area.
  • the connecting portion 52 of the bypass conductive portion 5 is not an end face of the first conductive layer 1 but in a plan view of the first conductive layer 1.
  • the structure is in contact with a portion having a significant area (such as the extension 103). This is advantageous for reliable conduction while lowering the contact resistance between the first conductive layer 1 and the bypass conductive portion 5.
  • FIG. 66 shows a modification of the electronic device B5 and the organic thin film solar cell module A5.
  • the third edge 101 of the first conductive layer 1 coincides with the first edge 421 and the second edge 451 in plan view.
  • the inner bus bar portion 51 in the above-described example is not provided.
  • Such a modification is formed by patterning the first conductive layer 1 using aqua regia using the protective resin layer 45 as a mask.
  • FIG. 67 shows a modification of the electronic device B5 and the organic thin film solar cell module A5.
  • the first conductive layer 1 has a third inward retracting edge 102 instead of the third end edge 101.
  • the third inward retracting edge 102 is retracted inward from the first end edge 421 and the second end edge 451 in a plan view.
  • the inner bus bar portion 51 in the above-described example is not provided.
  • Such a modification is manufactured by forming the third inward retracting edge 102 together with the slit 19 and the like after the first conductive layer 1 is formed on the support substrate 41.
  • the manufacturing method of the organic thin film solar cell module, the electronic device, and the organic thin film solar cell module according to the present invention is not limited to the above-described embodiment.
  • the specific configuration of the organic thin film solar cell module, the electronic device, and the method of manufacturing the organic thin film solar cell module according to the present invention can be varied in design in various ways.
  • the electronic device according to the present invention can be applied to various electronic devices that can use solar power generation, such as a portable telephone terminal, and examples thereof include a wrist watch and an electronic calculator.
  • [Appendix 1B] A transparent support substrate; A transparent first conductive layer laminated on the support substrate; A second conductive layer; A photoelectric conversion layer comprising an organic thin film sandwiched between the first conductive layer and the second conductive layer; A passivation film covering the second conductive layer; With The passivation film has a first edge; The organic thin-film solar cell module in which the support substrate is exposed in a region adjacent to the first edge.
  • Appendix 2B The organic thin-film solar cell module according to appendix 1B, wherein the first conductive layer has a third edge that coincides with the first edge in plan view.
  • the protective resin layer has a second outer end edge located on the opposite side of the second end edge across at least a part of the photoelectric conversion layer in plan view;
  • the passivation film has a first outer end edge that coincides with the second outer end edge in plan view,
  • the first conductive layer has an extension portion extending outward from the second outer end edge and the first outer end edge;
  • the organic thin-film solar cell module according to any one of supplementary notes 16B to 19B, comprising a bypass conductive portion that covers at least a part of the extension portion and is made of a material having a lower resistance than the material of the first conductive layer.
  • the bypass conductive part is the organic thin-film solar cell module according to appendix 20B or 21B, which covers the second outer edge and the first outer edge.
  • the second conductive layer has any one of appendices 20B to 23B having a second outer end edge and a fourth outer retreat end edge that retreats inward from the first outer end edge in a plan view.
  • [Appendix 28B] The organic thin-film solar cell module according to appendix 27B, wherein, in the step of exposing the support substrate, a third edge that coincides with the second edge and the first edge in plan view is formed on the first conductive layer. Manufacturing method.
  • [Appendix 29B] The manufacturing method of the organic thin-film solar cell module according to appendix 28B, wherein the second end edge and the first end edge are annular in plan view.
  • [Appendix 30B] The method for manufacturing an organic thin-film solar cell module according to Appendix 29B, wherein the third end edge is annular in plan view.
  • the said 1st conductive layer is a manufacturing method of the organic thin-film solar cell module in any one of appendix 27B thru
  • [Appendix 32B] The method for manufacturing an organic thin-film solar cell module according to any one of appendices 27B to 31B, wherein the second conductive layer is made of metal.
  • [Appendix 33B] The method for manufacturing an organic thin film solar cell module according to Supplementary Note 32B, wherein the second conductive layer is made of Al.
  • the said protective resin layer is a manufacturing method of the organic thin-film solar cell module in any one of appendix 27B thru
  • Appendix 36B In the step of laminating the protective resin layer, forming a second outer edge located on the opposite side of the second edge with at least a part of the photoelectric conversion layer in plan view, Forming a first outer edge on the passivation film that coincides with the second outer edge in plan view by partially removing the passivation film with the second edge as a boundary; The first conductive layer covers at least a part of the second outer end edge and an extended portion extending outward from the first outer end edge, and is lower than the material of the first conductive layer.
  • a step of forming a bypass conductive portion made of a resistance material The method for manufacturing an organic thin-film solar cell module according to any one of appendices 27B to 35B.
  • Appendix 37B In the step of forming the bypass conductive portion, the organic thin-film solar cell module manufacturing method according to appendix 36B, wherein the bypass conductive portion covers the second outer end edge and the first outer end edge.
  • the said bypass conductive part is a manufacturing method of the organic thin-film solar cell module of Additional remark 36B or 37B containing AgB or carbon.
  • “transparent” is defined as having a transmittance of about 50% or more. “Transparent” is also used to mean colorless and transparent to visible light. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.
  • FIG. 68 shows an example of an electronic device 100 equipped with the organic thin film solar cell 10 according to the present invention.
  • the electronic device 100 is a desktop electronic calculator (calculator).
  • the electronic device 100 includes a display unit 120, an input unit 130, and the organic thin film solar cell 10 that are disposed on the surface of the housing 110.
  • the display unit 120 is, for example, a liquid crystal display.
  • the input unit 130 is a so-called numeric keypad.
  • the electric power generated by the organic thin film solar cell 10 is used as electric power for calculation and display.
  • the organic thin-film solar cell 10 is incorporated so that the light receiving surface 11 faces the surface of the housing 110.
  • the organic thin film solar cell 10 has a form in which a plurality of rectangular cells 12 are arranged in the horizontal direction, and the surface of each cell 12 is externally provided by the configuration described below, which is characterized by the present invention.
  • a desired design D that can be visually recognized is represented.
  • FIG. 70 shows the structure of the organic thin film solar cell 10A according to the seventh embodiment. It is sectional drawing which follows a LXX-LXX line.
  • FIG. 70 shows the light receiving surface 11 facing downward.
  • the organic thin film solar cell 10A includes a support substrate 200, a first electrode layer 310, a photoelectric conversion layer 400, a second electrode layer 510, a passivation layer 610, a bonding layer 620, and a protective layer 630.
  • the support substrate 200 has a first surface 201 and a second surface 202 on the opposite side, and is made of, for example, transparent glass or resin.
  • the thickness of the support substrate 200 is, for example, 0.05 mm to 2.0 mm, but is not limited thereto.
  • the first electrode layer 310 is formed on the second surface 202 of the support substrate 200.
  • the first electrode layer 310 is transparent, and is made of ITO in this embodiment.
  • the first electrode layer 310 is separated for each cell 12 by a slit 311 penetrating in the thickness direction.
  • the first electrode layer 310 is also provided with a recessed portion (opening) 320 on the surface opposite to the support substrate 200 to form a thin portion 312.
  • the thickness of the general portion 313 of the first electrode layer 310 is, for example, 100 to 200 nm, and the thickness of the thin portion 312 is, for example, 50 to 100 nm. is there.
  • the first electrode layer 310 is a layer in which carriers generated in the photoelectric conversion layer 400 are collected.
  • the photoelectric conversion layer 400 is laminated on the opposite side of the first electrode layer 310 from the support substrate 200.
  • the photoelectric conversion layer 400 is separated for each cell 12 by a slit 401 that planarly matches the slit 311 provided in the first electrode layer 310. Thereby, the end surface of the first electrode layer 310 facing the slit 311 and the end surface of the photoelectric conversion layer 400 facing the slit 401 are flush with each other.
  • the photoelectric conversion layer 400 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power.
  • the specific configuration of the photoelectric conversion layer 400 is not particularly limited, and as an example, a bulk heterojunction organic active layer and a hole transport layer stacked on the first electrode layer 310 side with respect to the bulk heterojunction organic active layer are listed. It consists of.
  • the thickness of the photoelectric conversion layer 400 is, for example, 100 to 200 nm.
  • the photoelectric conversion layer 400 is provided with irregularities 411 reflecting the form of the recessed portions 320 formed in the first electrode layer 310. Note that such unevenness 411 may not be formed in the photoelectric conversion layer 400.
  • a p-type organic active layer region and an n-type organic active layer region are mixed to form a complex bulk hetero pn junction.
  • the p-type organic active layer region is formed of, for example, P3HT (poly (3-hexylthiophene-2,5diyl)), and the n-type organic active layer region is, for example, PCBM (6,6-phenyl-C61-butyric acid methyl). ester).
  • the hole transport layer is made of, for example, PEDOT: PSS.
  • Examples of materials used to form the photoelectric conversion layer 400 include phthalocyanine (Pc: Phthhalocyanine), zinc phthalocyanine (ZnPc: Zinc- phthalocyanine), and Me-Ptcdi (N, N'-dimethyl perylene-3,4,9,10). -dicarboximide) and fullerene (C 60: Buckminster fullerene). These materials are used for vacuum deposition, for example.
  • MDMO-PPV poly [2-methoxy-5- (3,7-dimethyl-octyloxy)]-1,4-phenylene-vinylene
  • PCDTBT poly [N-9'-hepta-decanyl-2,7-carbazole-alt-5,5- (4 ', 7'-di-thienyl-2'1', 3'-b3nzothiadizaole)]
  • PC60BM 6-phenyl-C61-butyric acid methyl ester
  • PC70BM 6-,6-phenyl-C71-butyric acid methyl ester.
  • the second electrode layer 510 is stacked on the photoelectric conversion layer 400 for each cell 12 so as to sandwich the photoelectric conversion layer 400 in the thickness direction with the second surface 202 of the support substrate 200 together with the first electrode layer 310.
  • the second electrode layer 510 is formed of, for example, Al, but the material is not limited, and may be formed of an electrode metal typified by W, Mo, Mn, Mg, Au, and Ag. it can. Accordingly, the second electrode layer 2 is not transparent but opaque in the definition of the present application. In this case, a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second electrode layer 510 opposite to the support substrate 200.
  • the thickness of the second electrode layer 2 is, for example, 100 to 200 nm.
  • the second electrode layer 510 is a layer in which carriers generated by the photoelectric conversion layer are collected. Similar to the photoelectric conversion layer 400, the second electrode layer 510 is provided with irregularities 511 reflecting the form of the recessed portions 320 formed in the first electrode layer 310. Note that such unevenness 511 may not be formed in the second electrode layer 510.
  • the passivation layer 610 is laminated on the second electrode layer 510, protects the second electrode layer 510 and the photoelectric conversion layer 400, and also enters the slit 311 for separating each cell 12, and the slit 311 Is in close contact with the support substrate 200.
  • the passivation layer 610 is made of, for example, SiN, SiO2, or SiON.
  • the thickness of the passivation layer 42 is, for example, 0.5 ⁇ m to 2.0 ⁇ m, and is thicker than each of the first electrode layer 310, the photoelectric conversion layer 400, and the second electrode layer 510.
  • the passivation layer 610 is preferably formed to a thickness that allows the surface to be flat without being affected by the recessed portion 320 provided in the first electrode layer 310.
  • the bonding layer 620 is a layer that bonds the passivation layer 610 and the protective layer 630, and is, for example, a resin-based adhesive layer.
  • the protective layer 630 is provided to protect the organic thin-film solar cell 10A from the side opposite to the support substrate 200.
  • the protective layer 630 is preferably made of glass or a film, but other transparent materials that can protect the organic thin film solar cell 10A can be appropriately employed.
  • the thickness of the protective layer 44 is, for example, 30 ⁇ m to 100 ⁇ m.
  • the thin portion 312 is formed in the first electrode layer 310 by providing the recessed portion (opening portion) 320 on the side opposite to the support substrate 200.
  • This thin portion 312 is for representing the design D that can be visually recognized from the first surface 201 side of the support substrate 200.
  • the support substrate of the first electrode layer 310 As shown in detail in FIG. 70, the support substrate of the first electrode layer 310.
  • a plurality of fine line-shaped concave grooves 321 linearly extending with a width w of, for example, 5 to 20 ⁇ m are formed on the surface opposite to 200 by forming a fine pitch interval p of, for example, 30 to 50 ⁇ m. Yes.
  • the region where the groove 321 is provided can be obtained by the light diffraction action at the step portion in the minute groove 321. It can be visually recognized as a hologram. Therefore, by selecting the planar shape of the region where the plurality of fine grooves 321 as described above are provided, as shown in FIG. 69, the first surface 201 side of the support substrate 200, that is, the organic thin film solar cell
  • the design D such as characters and designs can be represented as a hologram on the light receiving surface 11 of the battery 10A.
  • the photoelectric conversion layer 400 and the second electrode layer 510 are provided with the unevenness 411 and 511 reflecting the shape of the recessed portion 320 provided in the first electrode layer 310. Therefore, when the passivation layer 610, the bonding layer 620, and the protective layer 630 are transparent, even when the organic thin-film solar cell 10A is observed from the back side, as shown in FIG. Appears.
  • a support substrate 200 is prepared, and ITO 300 is formed on the second surface 202 of the support substrate 200 by a general method such as sputtering.
  • the ITO 300 is patterned to form first electrode layers 310 separated for each rectangular cell 12.
  • the first electrode layers 310 are independent from each other, and the adjacent first electrode layers 310 are separated by the slits 311.
  • a patterning technique for ITO for example, a technique using wet etching, a technique using dry etching, and a technique using laser patterning are appropriately employed.
  • the first electrode layer 310 is not limited to the above, and may be formed by directly patterning ITO on the second surface 202 of the support substrate 200 by a printing method.
  • a thin-walled portion 312 is formed in the first electrode layer 310 by providing a concave groove (opening) 321 on the exposed surface (surface opposite to the support substrate 200). Specifically, a plurality of concave grooves 321 are formed in a region that should represent the design D on the first electrode layer 310. As described above, in the present embodiment, the thickness of the first electrode layer 310 is 100 to 200 nm, the plurality of concave grooves 321 are in a line shape having a width w of, for example, 5 to 20 ⁇ m, and the arrangement pitch p is 30 to 50 ⁇ m.
  • the depth of the concave groove 321 is 50 to 100 nm.
  • a method of forming the concave groove 321 having such a fine width w on the first electrode layer 310 having a fine pitch interval p and a minute thickness a laser spot having a predetermined output is formed on the first electrode layer 310. It is appropriate to carry out by scanning.
  • the step of providing the concave groove 321 in the first electrode layer 310 can be performed by dry etching simultaneously with the step of providing the slit 311 in the ITO 300.
  • the etching rates are made different from each other, and the concave groove 321 and the slit 311 having different removal depths are formed simultaneously. can do.
  • a photoelectric conversion layer 400 is formed.
  • the photoelectric conversion layer 400 is formed by, for example, forming an organic film on the support substrate 200 and the first electrode layer 310 by spin coating and then using oxygen plasma etching or laser patterning to form a rectangular first film. This is done by finishing to a planar shape that matches the planar shape of the electrode layer 310.
  • the photoelectric conversion layer 400 is not limited to the above, and an organic film is directly formed on the support substrate 200 and the first electrode layer 310 by a slit coating method, a capillary coating method, a printing method such as gravure printing or screen printing. It may be formed by patterning.
  • a second electrode layer 510 is formed.
  • the second electrode layer 510 is formed by, for example, forming a metal film on the support substrate 200, the first electrode layer 310, and the photoelectric conversion layer 400 by using the above-described metal by vacuum heating vapor deposition, and then, for example, forming a mask layer on the metal film. This is performed by performing patterning by performing etching using. By this patterning, the second electrode layer 510 is formed on the photoelectric conversion layer 400. Thereafter, as shown in FIG. 76, for example, SiN, SiO2, or SiON is formed on the support substrate 200, the first electrode layer 310, the photoelectric conversion layer 400, and the second electrode layer 510 by plasma CVD.
  • a passivation layer 610 is formed. Then, the protective layer 44 is bonded to the passivation layer 610 via the bonding layer 620 (FIG. 77). Through the above steps, the organic thin-film solar cell 10A shown in FIG. 70 is obtained.
  • the thin-walled portion 312 is provided by forming the recessed portion (opening) 320 in the first electrode layer 310 between the support substrate 200 and the photoelectric conversion layer 400. Since the design D is configured and the design D is configured to be visible from the support substrate 200 side, the organic thin film solar cell 10 can be laminated without adding an additional member or printing on the outside. The design D can be represented on the light receiving surface 11 of the thin film solar cell 10A. In addition, the design D displayed in this way can maintain the quality of the design D display without causing deterioration or disappearance of the design D due to contact or friction with an external object.
  • the design D as a hologram can be expressed so as to be visible from the light receiving surface 11 by processing the first electrode layer 310, and therefore the organic thin film solar cell 10A. Or it is useful for counterfeit measures of the electronic device 100 provided with this.
  • the design D is configured by providing the thin electrode portion 312 that does not penetrate the first electrode layer 310. There is no need to reduce the effective power generation area of the conversion layer 400. For this reason, even if it is a case where the design D is comprised, the reduction
  • FIG. 79 shows the structure of an organic thin-film solar cell 10B according to the eighth embodiment of the present invention, and corresponds to an enlarged cross section taken along line LXX-LXX in FIG.
  • This organic thin film solar cell 10B has a support substrate 200, a first electrode layer 310, a photoelectric conversion layer 400, a second electrode layer 510, a passivation layer 610, a bonding layer 620, and a protective layer 630.
  • the support substrate 200 has a first surface 201 and a second surface 202 on the opposite side, and is made of, for example, transparent glass or resin.
  • the thickness of the support substrate 200 is, for example, 0.05 mm to 2.0 mm, but is not limited thereto.
  • the first electrode layer 310 is formed on the second surface 202 of the support substrate 200.
  • the first electrode layer 310 is transparent, and is made of ITO in this embodiment.
  • the first electrode layer 310 is separated for each cell 12 by a slit 311 penetrating in the thickness direction.
  • the first electrode layer 310 is also provided with a recessed portion (opening) 320 on the surface on the support substrate 200 side, whereby a thin portion 312 is formed.
  • the thickness of the general portion 313 of the first electrode layer 310 is, for example, 100 to 200 nm, and the thickness of the thin portion 312 is, for example, 50 to 100 nm. is there.
  • the first electrode layer 310 is a layer in which carriers generated in the photoelectric conversion layer 400 are collected.
  • the photoelectric conversion layer 400 is laminated on the opposite side of the first electrode layer 310 from the support substrate 200.
  • the photoelectric conversion layer 400 is separated for each cell 12 by a slit 401 that planarly matches the slit 311 provided in the first electrode layer 310. Thereby, the end surface of the first electrode layer 310 facing the slit 311 and the end surface of the photoelectric conversion layer 400 facing the slit 401 are flush with each other.
  • the photoelectric conversion layer 400 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power.
  • the specific configuration of the photoelectric conversion layer 400 is the same as that described above for the organic thin-film solar cell 10A according to the seventh embodiment.
  • the thickness of the photoelectric conversion layer 400 is, for example, 100 to 200 nm.
  • the second electrode layer 510 is stacked on the photoelectric conversion layer 400 for each cell 12 so as to sandwich the photoelectric conversion layer 400 in the thickness direction with the second surface 202 of the support substrate 200 together with the first electrode layer 310.
  • the second electrode layer 510 is formed of, for example, Al.
  • the material is not limited, and W, Mo, Mn, Mg, Au, and Ag are the same as described in the seventh embodiment. It can be formed of a representative electrode metal. Accordingly, the second electrode layer 2 is not transparent but opaque in the definition of the present application. In this case, a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second electrode layer 510 opposite to the support substrate 200.
  • the thickness of the second electrode layer 2 is, for example, 100 to 200 nm.
  • the second electrode layer 510 is a layer in which carriers generated by the photoelectric conversion layer are collected.
  • the passivation layer 610 is laminated on the second electrode layer 510, protects the second electrode layer 510 and the photoelectric conversion layer 400, and also enters the slit 311 for separating each cell 12, and the slit 311 Is in close contact with the support substrate 200.
  • the passivation layer 610 is made of, for example, SiN, SiO2, or SiON.
  • the thickness of the passivation layer 610 is, for example, 0.5 ⁇ m to 2.0 ⁇ m, and is thicker than each of the first electrode layer 310, the photoelectric conversion layer 400, and the second electrode layer 510.
  • the bonding layer 620 is a layer that bonds the passivation layer 610 and the protective layer 630, and is, for example, a resin-based adhesive layer.
  • the protective layer 630 is provided to protect the organic thin-film solar cell 10B from the side opposite to the support substrate 200.
  • the protective layer 630 is preferably made of glass or a film, but other transparent materials that can protect the organic thin film solar cell 10B can be appropriately employed.
  • the thickness of the protective layer 630 is, for example, 30 ⁇ m to 100 ⁇ m.
  • the thin portion 312 is formed in the first electrode layer 310 by providing the recessed portion (opening portion) 320 on the surface on the support substrate 200 side. As will be described later, the thin portion 312 is for representing the design D that can be viewed from the first surface 201 side of the support substrate 200.
  • a plurality of minute concave grooves 321 having a width w of, for example, 5 to 20 ⁇ m and linearly extending on the support substrate 200 side of the layer 310 are formed at a minute pitch interval p of, for example, 30 to 50 ⁇ m.
  • the region where the concave groove 321 is provided as a hologram due to the light diffraction action at the step portion in the fine concave groove 321. It can be visually recognized. Accordingly, by selecting the planar shape of the region where the plurality of fine grooves 321 as described above are provided, as shown in FIG. 70, the first surface side of the support substrate 200, that is, the organic thin film solar cell.
  • the design D such as characters and designs can be represented as a hologram on the light receiving surface 11 of 10B.
  • groove 321 is provided in the support substrate 200 side of the 1st electrode layer 310, the surface on the opposite side to the support substrate 200 of the 1st electrode layer 310 is made flat. Accordingly, the surfaces of the photoelectric conversion layer 400 and the second electrode layer 610 can be flattened.
  • a support substrate 200 is prepared, and an ITO 300 is formed on the second surface 202 of the support substrate 200 by a general method such as sputtering.
  • the first electrode layer 310 separated for each rectangular cell 12 is formed by patterning the ITO 300.
  • the first electrode layers 310 are independent from each other, and the adjacent first electrode layers 310 are separated by the slits 311.
  • a patterning technique for ITO for example, a technique using wet etching, a technique using dry etching, and a technique using laser patterning are appropriately employed.
  • the first electrode layer 310 is not limited to the above, and may be formed by directly patterning ITO on the second surface 202 of the support substrate 200 by a printing method.
  • a photoelectric conversion layer 400 is formed.
  • the photoelectric conversion layer 400 is formed by, for example, forming an organic film on the support substrate 200 and the first electrode layer 310 by spin coating and then using oxygen plasma etching or laser patterning to form a rectangular first film. This is done by finishing to a planar shape that matches the planar shape of the electrode layer 310.
  • the photoelectric conversion layer 400 is not limited to the above, and an organic film is directly formed on the support substrate 200 and the first electrode layer 310 by a slit coating method, a capillary coating method, a printing method such as gravure printing or screen printing. It may be formed by patterning.
  • a second electrode layer 510 is formed.
  • the second electrode layer 510 is formed by forming a metal film on the support substrate 200, the first electrode layer 310, and the photoelectric conversion layer 400 using, for example, the above-described metal by vacuum heating evaporation.
  • the metal film is patterned by performing etching using, for example, a mask layer.
  • the second electrode layer 510 is formed on the photoelectric conversion layer 400.
  • SiN, SiO2 or SiON is formed over the support substrate 200, the first electrode layer 310, the photoelectric conversion layer 400 and the second electrode layer 510 by, for example, plasma CVD.
  • the passivation layer 610 is formed.
  • a thin-walled portion 312 is formed in the first electrode layer 310 by providing a concave groove (opening) 321 on the surface on the support substrate 200 side.
  • a plurality of concave grooves 321 are formed in a region that should represent the design D on the first electrode layer 310.
  • the thickness of the first electrode layer 310 is 100 to 200 nm
  • the plurality of concave grooves 321 have a width w of, for example, 5 to 20 ⁇ m, and an arrangement pitch p of 30 to 50 ⁇ m. .
  • the depth of the concave groove 321 is 50 to 100 nm.
  • a laser having a predetermined output is applied to the transparent support substrate 200. It is appropriate to irradiate the first electrode layer 310 from the one surface 201 side and scan the laser spot.
  • the protective layer 630 is bonded to the passivation layer 610 via the bonding layer 620 (FIG. 86).
  • the organic thin film solar cell 10B shown in FIG. 79 is obtained.
  • the laser is applied from the first surface side of the support substrate 200 as described above. And after scanning the laser spot, after the first electrode layer 310 is formed, the photoelectric conversion layer 400 is formed, the second electrode layer 510 is formed, or After forming up to the protective layer 630, it may be performed at any time.
  • the concave groove 321 on the support base 200 side is provided in the first electrode layer 310 after the protective layer 630 is formed, the concave groove 321 may be provided in a state where the solar cell 10B is further strengthened by the protective layer 630 in the manufacturing process. Therefore, the manufacturing reliability of the solar cell 10B is improved.
  • the thin portion 312 is formed by forming the concave groove (opening) 321 in the first electrode layer 310 between the support substrate 200 and the photoelectric conversion layer 400. Since the design D is configured and the design D is configured to be visible from the support substrate 200 side, the organic thin film solar cell 10B can be laminated without adding an additional member or printing on the outside. The design D can be represented on the light receiving surface 11 of the thin film solar cell 10B. Further, the design D represented as described above can be maintained in the quality of the design display without causing deterioration or disappearance of the design D due to contact or friction with an external object.
  • the design D can be expressed as a hologram so that the design D can be viewed from the light receiving surface 11 by processing on the first electrode layer 310. This is useful for counterfeit countermeasures of the electronic device 100 having this.
  • the design D is configured by providing the first electrode layer 310 with the thin-walled portion 312 that does not penetrate the first electrode layer 310. There is no need to reduce the effective power generation area of the conversion layer 400. For this reason, even when the design D is configured, reduction in power generation efficiency as the organic thin-film solar cell 10B can be suppressed.
  • the groove (opening) 321 is provided on the surface of the first electrode layer 310 on the support substrate 200 side, the support base 200 and the groove 321 In the enclosed space, light incident from the support substrate 200 side can be scattered. Thereby, the light quantity which injects into the photoelectric converting layer 400 can be increased, and electric power generation efficiency can be improved.
  • FIG. 87 shows a cross-sectional view of an organic thin-film solar cell 10C according to the ninth embodiment of the present invention, and the cross-sectional view corresponds to a cross-sectional view taken along line III-II in FIG.
  • the organic thin film solar cell 10C includes a support substrate 200, a first electrode layer 310, a photoelectric conversion layer 400, a second electrode layer 510, a passivation layer 610, a bonding layer 620, and a protective layer 630.
  • the support substrate 200 has a first surface 201 and a second surface 202 on the opposite side, and is made of, for example, transparent glass or resin.
  • the thickness of the support substrate 200 is, for example, 0.05 mm to 2.0 mm, but is not limited thereto.
  • the first electrode layer 310 is formed on the second surface 202 of the support substrate 200.
  • the first electrode layer 310 is transparent, and is made of ITO in this embodiment.
  • the first electrode layer 310 is separated for each cell 12 by a slit 311 penetrating in the thickness direction.
  • the first electrode layer 310 also has a penetrating portion (opening) 330 penetrating in the thickness direction. The details and technical significance of the through portion 330 will be described later.
  • the thickness of the general portion 313 of the first electrode layer 310 is, for example, 100 to 200 nm.
  • the first electrode layer 310 is a layer in which carriers generated in the photoelectric conversion layer 400 are collected.
  • the photoelectric conversion layer 400 is laminated on the opposite side of the first electrode layer 310 from the support substrate 200.
  • the photoelectric conversion layer 400 is separated for each cell 12 by a slit 401 that planarly matches the slit 311 provided in the first electrode layer 310. Thereby, the end surface of the first electrode layer 310 facing the slit 311 and the end surface of the photoelectric conversion layer 400 facing the slit 401 are flush with each other.
  • the photoelectric conversion layer 400 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power.
  • the specific configuration of the photoelectric conversion layer 400 is the same as that described above for the organic thin-film solar cell 10 according to the seventh embodiment.
  • the thickness of the photoelectric conversion layer 400 is, for example, 100 to 200 nm.
  • the photoelectric conversion layer 400 is provided with irregularities 411 reflecting the form of the recessed portions 320 formed in the first electrode layer 310. Note that such unevenness 411 may not be formed in the photoelectric conversion layer 400.
  • the second electrode layer 510 is laminated on the photoelectric conversion layer 400 for each cell 12 so as to sandwich the photoelectric conversion layer 400 in the thickness direction with the second surface 202 of the support substrate 00 together with the first electrode layer 310.
  • the second electrode layer 510 is formed of, for example, Al.
  • the material is not limited, and W, Mo, Mn, Mg, Au, and Ag are the same as described in the seventh embodiment. It can be formed of a representative conductive metal. Accordingly, the second electrode layer 2 is not transparent but opaque in the definition of the present application. In this case, a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second electrode layer 510 opposite to the support substrate 200.
  • the thickness of the second electrode layer 2 is, for example, 100 to 200 nm.
  • the second electrode layer 510 is a layer in which carriers generated by the photoelectric conversion layer are collected. Similar to the photoelectric conversion layer 400, the second electrode layer 510 is provided with irregularities 511 reflecting the form of the through portion 330 formed in the first electrode layer 310. Such unevenness 511 may not be formed on the second electrode layer 510.
  • the passivation layer 610 is laminated on the second electrode layer 510, protects the second electrode layer 510 and the photoelectric conversion layer 400, and also enters the slit 311 for separating each cell 12, and the slit 311 Is in close contact with the support substrate 200.
  • the passivation layer 610 is made of, for example, SiN, SiO2, or SiON.
  • the thickness of the passivation layer 42 is, for example, 0.5 ⁇ m to 2.0 ⁇ m, and is thicker than each of the first electrode layer 310, the photoelectric conversion layer 400, and the second electrode layer 510.
  • the passivation layer 610 is preferably formed to a thickness that allows the surface to be flat without being affected by the recessed portion 320 provided in the first electrode layer 310.
  • the bonding layer 620 is a layer that bonds the passivation layer 610 and the protective layer 630, and is, for example, a resin-based adhesive layer.
  • the protective layer 630 is provided to protect the organic thin-film solar cell 10C from the side opposite to the support substrate 200.
  • the protective layer 630 is preferably made of glass or a film, but other transparent materials that can protect the organic thin-film solar cell 10C can be appropriately employed.
  • the thickness of the protective layer is, for example, 30 ⁇ m to 100 ⁇ m.
  • the first electrode layer 310 is formed with a penetrating portion (opening) 330 penetrating in the thickness direction.
  • the through portion 330 is for representing the design D that can be viewed from the first surface 201 side of the support substrate 200.
  • the width w is, for example, 5 to 20 ⁇ m.
  • a plurality of fine line-shaped slits 331 extending linearly are formed at a fine pitch interval p of, for example, 30 to 50 ⁇ m.
  • the region where the slit 331 is provided can be visually recognized as a hologram due to the light diffraction action of the fine slit 331. Therefore, by selecting the planar shape of the region where the plurality of fine slits 331 as described above are selected, as shown in FIG. 69, the first surface side of the support substrate 200, that is, the organic thin film solar cell 10C.
  • the design D such as letters and designs can be represented as a hologram on the light receiving surface 11.
  • the design as a hologram appears like the organic thin film solar cell 10A which concerns on 1st Embodiment mentioned above. It is.
  • a support substrate 200 is prepared, and ITO 300 is formed on the second surface 202 of the support substrate 200 by a general method such as sputtering.
  • the ITO 300 is patterned to form the first electrode layer 310 separated for each rectangular cell 12.
  • the first electrode layers 310 are independent from each other, and the adjacent first electrode layers 310 are separated by the slits 311.
  • a patterning technique for ITO for example, a technique using wet etching, a technique using dry etching, and a technique using laser patterning are appropriately employed.
  • the first electrode layer 310 is not limited to the above, and may be formed by directly patterning ITO on the second surface 202 of the support substrate 200 by a printing method.
  • a plurality of fine slits 331 are formed in the first electrode layer 310. Specifically, a plurality of slits 331 are formed in a region that should represent the design D on the first electrode layer 310.
  • the thickness of the first electrode layer 310 is 100 to 200 nm
  • the plurality of slits 331 have a width w of, for example, 5 to 20 ⁇ m, and an arrangement pitch p of 30 to 50 ⁇ m.
  • the step of forming the slit 311 in the ITO 300 to form the first electrode layer 310 separated for each cell 12 (FIG. 89) and the step of forming the slit 331 in the first electrode layer 310 (FIG. 90) are in order. It may be reversed.
  • the step of providing the slit 331 in the first electrode layer 310 can be performed by dry etching simultaneously with the step of providing the slit 311 in the ITO 300.
  • a photoelectric conversion layer 400 is formed.
  • the photoelectric conversion layer 400 is formed by, for example, forming an organic film on the support substrate 200 and the first electrode layer 310 by spin coating and then using oxygen plasma etching or laser patterning to form a rectangular first film. This is done by finishing to a planar shape that matches the planar shape of the electrode layer 310.
  • the photoelectric conversion layer 400 is not limited to the above, and an organic film is directly formed on the support substrate 200 and the first electrode layer 310 by a slit coating method, a capillary coating method, a printing method such as gravure printing or screen printing. It may be formed by patterning.
  • a second electrode layer 510 is formed.
  • the second electrode layer 510 is formed by, for example, forming a metal film on the support substrate 200, the first electrode layer 310, and the photoelectric conversion layer 400 by using the above-described metal by vacuum heating vapor deposition, and then, for example, forming a mask layer on the metal film. This is performed by performing patterning by performing etching using. By this patterning, the second electrode layer 510 is formed on the photoelectric conversion layer 400. Thereafter, as shown in FIG. 93, SiN, SiO2, or SiON is formed on the support substrate 200, the first electrode layer 310, the photoelectric conversion layer 400, and the second electrode layer 510, for example, by plasma CVD.
  • the organic thin film solar cell 10C shown in FIG. 96 is obtained.
  • the design D is configured by providing the first electrode layer 310 between the support substrate 200 and the photoelectric conversion layer 400 with the through portion (opening) 330. Since D is configured to be visible from the support substrate 200 side, the light-receiving surface 11 of the organic thin-film solar cell 10 can be obtained without laminating an additional member on the organic thin-film solar cell 10C or printing the outside. Design D can be represented by In addition, the design D displayed in this way can maintain the quality of the design D display without causing deterioration or disappearance of the design D due to contact or friction with an external object.
  • the design D can be represented as a hologram so that the design D can be viewed from the light receiving surface 11 by processing the first electrode layer 310, and therefore the organic thin film solar cell 10C. Or it is useful for counterfeit measures of the electronic device 100 provided with this.
  • the thin portion 312 or the slit 331 provided in the first electrode layer 310 is configured to generate a hologram when viewed from the first surface 201 side of the support substrate 200.
  • the thin-walled portion 312 or the slit 331 is not limited in its planar shape, or is not limited to one that generates a hologram as a set of the thin-walled portion 312 or the slit 331.
  • FIG. 95 is a plan view of an organic thin-film solar cell 10D according to the tenth embodiment of the present invention
  • FIG. 96 is an enlarged cross-sectional view taken along the line XCVI-XCVI of FIG.
  • FIG. The same or equivalent members or portions as those of the organic thin-film solar cell 10A according to the seventh embodiment shown in FIG.
  • a thin-walled portion 312 is formed by providing a recess (opening) 340 corresponding to the contour of the design D to be represented on the opposite side of the first electrode layer 310 from the support substrate 200. .
  • the planar shape of the thin portion 312 can be visually recognized from the first surface of the support substrate 200 as a color tone difference. Thereby, the desired design D can be represented.
  • a support substrate 200 is prepared, and an ITO 300 is formed on the second surface 202 of the support substrate 200 by a general method such as sputtering.
  • the first electrode layer 310 separated for each rectangular cell 12 is formed by patterning the ITO.
  • the first electrode layers 310 are independent from each other, and the adjacent first electrode layers 310 are separated by the slits 311.
  • a patterning technique for ITO for example, a technique using wet etching, a technique using oxygen plasma etching, and a technique using laser patterning are appropriately employed.
  • the first electrode layer 310 is not limited to the above, and may be formed by directly patterning the ITO 300 on the second surface 202 of the support substrate 200 by a printing method.
  • the thin portion 312 is formed by providing the first electrode layer 310 with a recess (opening) 340 corresponding to the contour of the design D to be represented.
  • a method for forming such a thin portion 312 it is appropriate to perform scanning by scanning a laser spot having a predetermined output on the first electrode layer 310.
  • a photoelectric conversion layer 400 is formed.
  • the photoelectric conversion layer 400 is formed by forming an organic film on the support substrate 200 and the first electrode layer 310 by spin coating and then using dry etching or laser patterning to form a rectangular first electrode. This is done by finishing to a planar shape that matches the planar shape of the layer 310.
  • the photoelectric conversion layer 400 is not limited to the above, and an organic film is directly formed on the support substrate 200 and the first electrode layer 310 by a slit coating method, a capillary coating method, a printing method such as gravure printing or screen printing. It may be formed by patterning.
  • a second electrode layer 510 is formed.
  • the second electrode layer 510 is formed by forming a metal film on the support substrate 200, the first electrode layer 310, and the photoelectric conversion layer 400 using, for example, the above-described metal by vacuum heating evaporation.
  • patterning is performed on the metal film by, for example, etching using a mask layer.
  • the second electrode layer 510 is formed on the photoelectric conversion layer 400.
  • SiN, SiO2, or SiON is formed on the support substrate 200, the first electrode layer 310, the photoelectric conversion layer 400, and the second electrode layer 510 by, for example, plasma CVD.
  • a passivation layer 610 is formed.
  • the protective layer 44 is bonded to the passivation layer 610 via the bonding layer 620 (FIG. 103).
  • FIG. 104 shows a plan view of organic thin-film solar cells 10E and 10F according to the eleventh and twelfth embodiments of the present invention
  • FIG. 105 shows the structure of the organic thin-film solar cell 10E according to the eleventh embodiment. It is an expanded sectional view in alignment with the CV-CV line.
  • a large number of thin portions 312 are provided by providing recesses (openings) 340 as a large number of dots on the opposite side of the first electrode layer 310 from the support substrate 200, and The set corresponds to the planar shape of the design D to be represented. Even with such a configuration, the design D visible from the light receiving surface 11 of the organic thin film solar cell 10E can be represented. In this case, the design D can be expressed more clearly by filling the concave portions 340 for forming dots with a coloring material.
  • FIG. 106 is a view corresponding to an enlarged cross-sectional view taken along line CV-CV of FIG. 104, showing an organic thin-film solar cell 10F according to the twelfth embodiment.
  • this organic thin film solar cell 10F through portions (openings) 330 as a large number of dots are provided in the first electrode layer 310 so that the set of the large number of dots corresponds to the planar shape of the design D to be represented. ing. Even with such a configuration, the design D visible from the light receiving surface 11 of the organic thin-film solar cell 10F can be represented. In this case, the design D can be expressed more clearly by filling the penetrating portions forming the dots with a coloring material.
  • 107 to 109 show examples in which the organic thin film solar cells 10G and 10H according to the present invention are incorporated in a timepiece as the electronic device 100, and the design D as a dial or a pattern is represented on the light receiving surface.
  • 107 is a plan view of a timepiece as the electronic apparatus 100
  • FIG. 108 is an enlarged sectional view taken along line CVIII-CVIII in FIG. 107
  • FIG. 109 is an enlarged sectional view taken along line CIX-CIX in FIG.
  • the same or equivalent members or parts as those of the organic thin film solar cell 10A according to the seventh embodiment shown in FIG. 108 and 109 show the light receiving surface 11 facing upward.
  • the organic thin film solar cell 10G In the organic thin film solar cell 10G, Roman numerals representing the time are represented as a design D in the cells 12 partitioned into an appropriate shape.
  • the organic thin film solar cell 10G for example, the organic thin film solar cell 10D according to the tenth embodiment shown in FIG. 96 may be adopted, but the organic thin film solar cells 10A to 10C according to other embodiments may be adopted. , 10E, 10F may be employed.
  • the outline of a predetermined width of the symbol of the heart is represented as the design D in the cell 12 partitioned into an appropriate shape.
  • the organic thin film solar cell 10H for example, the organic thin film solar cell 10D according to the tenth embodiment shown in FIG. 96 may be adopted, but the organic thin film solar cells 10A to 10C according to other embodiments may be adopted. , 10E, 10F may be employed.
  • the symbol that can be expressed by the organic thin film solar cell 10 according to the present invention is not limited to the heart shape.
  • FIG. 110 to 112 show an example in which the organic thin film solar cell 10I is arranged on the surface of a smartphone as the electronic device 100 and the design D is represented on the organic thin film solar cell 10I.
  • 107 is a plan view of a smartphone as the electronic device 100
  • FIG. 108 is an enlarged plan view of the organic thin-film solar cell 10I
  • FIG. 112 is an enlarged sectional view taken along line CXII-CXII in FIG.
  • FIG. 112 shows the light receiving surface 11 facing upward.
  • the design D made of letters is applied to the cells 12 partitioned into an appropriate shape. It is expressed as a hologram.
  • the organic thin film solar cell 10I As the structure of the organic thin film solar cell 10I, the organic thin film solar cell 10A according to the seventh embodiment shown in FIG. 70 is adopted, but the organic thin film solar cells 10B to 10F according to other embodiments are used. Can also be adopted.
  • the organic thin-film solar cell according to the present invention is not limited to the materials and numerical values described in the above-described embodiments and modifications, and various modifications can be made without departing from the spirit of the invention. Not too long.
  • a transparent support substrate having a first surface and a second surface opposite to the first surface; A transparent first electrode layer disposed on the second surface side of the support substrate; A photoelectric conversion layer made of an organic thin film, laminated on the opposite side of the first electrode layer from the support substrate; A second electrode layer laminated on the opposite side of the photoelectric conversion layer from the support substrate, and an organic thin film solar cell comprising:
  • the said 1st electrode layer is an organic thin-film solar cell in which the opening part contains the opening part and this opening part represents a design in the 1st surface side of the said support substrate.
  • the said opening part is an organic thin-film solar cell of Additional remark 1C in which the outer edge of the planar view comprises a part of outer edge of the design which should represent.
  • [Appendix 3C] The organic thin film solar cell according to appendix 1C, wherein the opening is formed as a set of dots having a predetermined shape in plan view.
  • [Appendix 4C] The organic thin-film solar cell according to attachment 3C, wherein the set of dodds constitutes a part of the design to be represented.
  • [Appendix 9C] The organic thin-film solar cell according to any one of appendices 1C to 8C, wherein the thickness of the first electrode layer other than the opening is 100 to 200 nm.
  • Appendix 10C The organic thin-film solar cell according to appendix 9C, wherein the opening is formed by recessing the first electrode layer by a predetermined depth from the surface opposite to the support substrate.
  • Appendix 11C The organic thin-film solar cell according to appendix 9C, wherein the opening is formed by recessing the first electrode layer by a predetermined depth from the surface on the support substrate side.
  • [Appendix 14C] The organic thin-film solar cell according to any one of appendices 9C to 13C, comprising a passivation layer that covers the second electrode layer on the side opposite to the photoelectric conversion layer.
  • [Appendix 23C] Forming a transparent first electrode layer having a predetermined thickness on the second surface side of the transparent support substrate having the first surface and the second surface opposite to the first surface, and having an opening on the surface; , Forming a photoelectric conversion layer on the first electrode layer; and Forming a second electrode layer on the photoelectric conversion layer;
  • a method for producing an organic thin film solar cell comprising: [Appendix 24C] The step of forming the first electrode layer includes the step of removing the first electrode layer in the thickness direction to form the opening, and the method for manufacturing an organic thin-film solar cell according to attachment 23C.
  • [Appendix 25C] The step of forming the opening is the method for manufacturing an organic thin-film solar cell according to appendix 24C, wherein the first electrode layer is removed by a predetermined depth in the thickness direction.
  • [Appendix 26C] The method of manufacturing an organic thin-film solar cell according to appendix 25C, wherein the step of forming the opening is performed such that the first electrode layer having a thickness of 100 to 200 nm remains in a thin portion having a thickness of 50 to 100 nm.
  • [Appendix 27C] The method of manufacturing an organic thin-film solar cell according to appendix 25C or 26C, wherein the step of forming the opening is performed by removing the first electrode layer from the side opposite to the support substrate.
  • [Appendix 28C] The step of forming the opening is the method for manufacturing an organic thin-film solar cell according to appendix 27C, which is performed after forming the first electrode layer before forming the opening.
  • [Appendix 29C] The step of forming the opening is performed by removing the first electrode layer from the first surface side of the support substrate, and the method for manufacturing an organic thin-film solar cell according to attachment 26C.
  • [Appendix 30C] The method of manufacturing an organic thin-film solar cell according to appendix 29C, wherein the step of forming the opening is performed after the step of forming the second electrode layer with respect to the first electrode layer before the opening is formed. .
  • the step of forming the opening is a method for manufacturing an organic thin-film solar cell according to appendix 24C, wherein the step of forming the opening is performed by forming a through portion that penetrates the first electrode layer in the thickness direction.
  • Appendix 32C The organic thin-film solar cell according to any one of appendices 24C to 31C, wherein the step of forming the opening is formed as a plurality of lines extending in a predetermined direction with a width of 5 to 20 ⁇ m arranged at intervals of 30 to 50 ⁇ m. Manufacturing method.
  • Appendix 33C The method of manufacturing an organic thin-film solar cell according to any one of appendices 24C to 31C, wherein the step of forming the opening is performed by laser irradiation.
  • Appendix 34C An electronic apparatus comprising a housing and comprising the organic thin-film solar cell according to any one of appendices 1C to 22C such that the first surface of the support substrate faces the surface of the housing.
  • “transparent” is defined as having a transmittance of about 50% or more. “Transparent” is also used to mean colorless and transparent to visible light. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.
  • the electronic device B13 of this embodiment includes an organic thin film solar cell module A13, an organic thin film solar cell module A14, a case 61, a control unit 701, a display unit 702, an input unit 703, a microphone 704, a speaker 705, a wireless communication unit 706, and a battery. 707 is configured as a portable telephone terminal.
  • the case 61 accommodates other components of the electronic device B13 and is made of a material such as metal, resin, or glass.
  • FIG. 113 is a plan view showing organic thin-film solar cell modules A13 and A14 and an electronic device B13 using them.
  • FIG. 114 is a bottom view showing organic thin-film solar cell modules A13 and A14 and electronic device B13.
  • 115 is a schematic cross-sectional view taken along line CXV-CXV in FIG. 116 is an enlarged cross-sectional view of a main part taken along line CXVI-CXVI in FIG. 113.
  • FIG. 117 is a system configuration diagram showing the electronic apparatus B13. In FIG. 115, only the case 61, the organic thin film solar cell module A13, the organic thin film solar cell module A14, the control unit 701, the display unit 702, and the battery 707 are schematically shown for the sake of understanding.
  • Organic thin film solar cell module A13 and organic thin film solar cell module A14 are power supply modules in electronic device B13, and convert light such as sunlight into electric power. A specific configuration will be described later.
  • the control unit 701 corresponds to an example of a drive unit referred to in the present invention, and is driven by power feeding from the organic thin film solar cell module A13 and the organic thin film solar cell module A14. Note that the controller 701 may be directly fed from the organic thin film solar cell module A13 and the organic thin film solar cell module A14, and the power from the organic thin film solar cell module A13 and the organic thin film solar cell module A14 is supplied to the battery 707. After being charged once, the battery 707 may be driven by power feeding.
  • the control unit 701 includes, for example, a CPU, a memory, an interface, and the like.
  • the display unit 702 is for displaying various types of information on the external appearance of the electronic device B13.
  • the display unit 702 is, for example, a liquid crystal display panel or an organic EL display panel. In the present embodiment, the display unit 702 displays information on the exterior through the organic thin film solar cell module A13.
  • the input unit 703 is for outputting a user operation as an electrical signal to the control unit 701.
  • the input unit 703 is a touch panel laminated on the display unit 702, for example. Note that the display unit 702 and the input unit 703 may be configured integrally.
  • the microphone 704 is a device that converts a user's voice into an electrical signal.
  • the speaker 705 is a device that outputs the voice of the other party and various notification sounds.
  • the wireless communication unit 706 is a device that performs bidirectional wireless communication conforming to the wireless communication standard.
  • the battery 707 is a device that stores electric power for driving the electronic apparatus B13.
  • the battery 707 is configured to be appropriately charged / discharged.
  • the battery 707 is charged by feeding from commercial power using an adapter (not shown) or feeding from the organic thin film solar cell module A13 and the organic thin film solar cell module A14.
  • the organic thin film solar cell module A13 and the organic thin film solar cell module A14 include the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3, the support substrate 41, the passivation layer 42, the protective resin layer 45, and the bypass conductive portion 5. I have.
  • the organic thin-film solar cell module A13 and the organic thin-film solar cell module A14 have a rectangular shape in plan view, but this is an example, and each may have various shapes.
  • the organic thin film solar cell module A13 and the organic thin film solar cell module A14 have the same configuration except for a part thereof. In the following, first, the organic thin film solar cell module A13 will be described.
  • FIG. 118 is an exploded perspective view of a main part showing the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3, the support substrate 41, and the protective resin layer 45 in the organic thin film solar cell module A13.
  • the support substrate 41 is indicated by an imaginary line (two-dot chain line).
  • FIG. 119 is a plan view showing the first conductive layer 1 of the organic thin-film solar cell module A13.
  • FIG. 120 is a plan view showing the photoelectric conversion layer 3 of the organic thin film solar cell module A13.
  • FIG. 121 is a plan view showing the second conductive layer 2 of the organic thin film solar cell module A13.
  • 122 is a plan view showing the protective resin layer 45 and the bypass conductive portion 5 of the organic thin-film solar cell module A13.
  • the support substrate 41 is a member that becomes a base of the organic thin film solar cell module A13.
  • the support substrate 41 is made of, for example, transparent glass or resin.
  • the thickness of the support substrate 41 is, for example, 0.05 mm to 2.0 mm.
  • the first conductive layer 1 is formed on the support substrate 41.
  • the first conductive layer 1 is transparent and is made of ITO in this embodiment.
  • the first conductive layer 1 includes a first electrode portion 11, a first end portion 14, a first extension portion 15, a second extension portion 16, a plurality of openings 18 and slits 19. And a third end edge 101 and an extending portion 103.
  • the first conductive layer 1 has a substantially rectangular shape in plan view, but this is an example of the shape of the first conductive layer 1.
  • the shape of the first conductive layer 1 can be set to various shapes.
  • the thickness of the first conductive layer 1 is, for example, 100 nm to 300 nm.
  • the first electrode part 11, the first end part 14, the first extension part 15, and the second extension part 16 are hatched.
  • the first electrode portion 11 is a layer in which holes generated by the photoelectric conversion layer 3 are aggregated, and functions as a so-called anode electrode. In the present embodiment, most of the first conductive layer 1 is a single first electrode portion 11.
  • the first extending portion 15 is a portion extending from the first electrode portion 11 to the outside of the photoelectric conversion layer 3 in plan view.
  • the boundary between the first electrode portion 11 and the first extension portion 15 is indicated by an imaginary line (two-dot chain line).
  • the first end portion 14 is a portion separated from the first electrode portion 11 by the slit 19.
  • the first end portion 14 has, for example, a circular shape in plan view.
  • the first end portion 14 has a shape in which a substantially circular portion and a rectangular portion are combined.
  • the second extending portion 16 extends from the first end portion 14 to the outside of the photoelectric conversion layer 3 in plan view.
  • the boundary between the first end portion 14 and the second extending portion 16 is indicated by an imaginary line (two-dot chain line).
  • the first extending portion 15 and the second extending portion 16 are arranged adjacent to each other.
  • the plurality of openings 18 are openings that penetrate the first conductive layer 1 in the thickness direction.
  • two openings 18 are provided.
  • the upper opening 18 in FIG. 119 is provided to make the speaker 705 function, for example.
  • the largest opening 18 in the center in the figure is provided to display the information displayed by the display unit 702 on the appearance.
  • the third edge 101 is an edge that defines the central opening 18 in the drawing.
  • the third end edge 101 is an end edge surrounding the opening 18 from four directions, and has a rectangular shape in plan view.
  • the third end edge 101 is not limited to a shape surrounding the opening 18 from four directions.
  • the third end edge 101 may be adjacent to the opening 18 from three directions so that the opening 18 opens outward from the first electrode portion 11 in plan view.
  • the third edge 101 may be adjacent to the opening 18 from two or only one side.
  • the support substrate 41 is exposed from the region adjacent to the third edge 101, that is, from the center 18 in the drawing.
  • the third edge 101 is an inner edge of a portion of the first conductive layer 1 that extends from a second edge 451 of a protective resin layer 45 to be described later and a first edge 421 of the passivation layer 42. .
  • the extending portion 103 is a portion extending outward from the passivation layer 42 and the protective resin layer 45. In the present embodiment, the extending portion 103 is provided on substantially the entire outer peripheral edge of the first conductive layer 1.
  • the second conductive layer 2 is laminated on the first conductive layer 1 via the photoelectric conversion layer 3. A part of the second conductive layer 2 is in direct contact with the first conductive layer 1.
  • the material of the 2nd conductive layer 2 is not specifically limited, In this embodiment, the 2nd conductive layer 2 consists of metals represented by Al, W, Mo, Mn, and Mg.
  • the second conductive layer 2 is not transparent.
  • a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second conductive layer 2 opposite to the support substrate 41.
  • the thickness of the second conductive layer 2 is, for example, 30 nm to 150 nm.
  • the second conductive layer 2 has a second electrode portion 21, a second end portion 24, and a plurality of openings 28.
  • the second conductive layer 2 has a substantially rectangular shape in plan view, but this is an example of the shape of the second conductive layer 2.
  • the shape of the second conductive layer 2 can be set to various shapes. In FIG. 121, the second electrode portion 21 and the second end portion 24 are hatched.
  • the second electrode portion 21 is a layer in which electrons generated by the photoelectric conversion layer 3 are collected, and functions as a so-called cathode electrode.
  • the second electrode portion 21 coincides with the first electrode portion 11 in plan view. In the present embodiment, most of the second conductive layer 2 is the second electrode portion 21.
  • the second end portion 24 coincides with the first end portion 14 of the first conductive layer 1 in plan view and is connected to the second electrode portion 21.
  • the shape of the second end portion 24 is indicated by an imaginary line (two-dot chain line).
  • the second end portion 24 is a combination of a substantially circular portion in plan view and a rectangular portion in plan view.
  • the plurality of openings 28 are openings that penetrate the second conductive layer 2 in the thickness direction.
  • two openings 28 are provided.
  • the upper opening 28 in FIG. 121 is provided in order to make the speaker 705 function, for example.
  • the largest opening 28 in the center in the figure is provided to display the information displayed by the display unit 702 on the appearance.
  • the fourth inward retracting edge 201 is an edge that defines the central opening 28 in the drawing.
  • the fourth inward retracting edge 201 is an edge that surrounds the opening 28 from four directions and has a rectangular shape in plan view.
  • the fourth inward retracting edge 201 is not limited to a shape surrounding the opening 28 from four directions.
  • the fourth inward retracting edge 201 may be configured such that the opening 28 is opened outward from the second electrode portion 21 in plan view by adjoining the opening 28 from three directions.
  • the fourth inward retracting edge 201 may be adjacent to the opening 28 from two or only one side.
  • the fourth inward retracting edge 201 is retracted inward (on the opposite side to the direction extending into the opening 18) than the third end edge 101.
  • the fourth outward retracting edge 202 is more inward in plan view than a first outer end edge 422 of a passivation layer 42 to be described later and a second outer end edge 452 of the protective resin layer 45. It is retracted (to the right in FIG. 116).
  • the fourth outward retracting edge 202 has an annular shape in plan view.
  • the photoelectric conversion layer 3 is sandwiched between the first conductive layer 1 and the second conductive layer 2 and laminated on the support substrate 41.
  • the photoelectric conversion layer 3 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power.
  • the specific configuration of the photoelectric conversion layer 3 is not particularly limited. For example, a bulk heterojunction organic active layer and a hole transport layer stacked on the first conductive layer 1 side with respect to the bulk heterojunction organic active layer are given. It consists of.
  • the photoelectric conversion layer 3 has a rectangular shape in plan view, but this is an example, and the photoelectric conversion layer 3 can have various shapes.
  • the thickness of the photoelectric conversion layer 3 is, for example, 50 nm to 300 nm.
  • a p-type organic active layer region and an n-type organic active layer region are mixed to form a complex bulk hetero pn junction.
  • the p-type organic active layer region is formed of, for example, P3HT (poly (3-hexylthiophene-2,5diyl)), and the n-type organic active layer region is, for example, PCBM (6,6-phenyl-C61-butyric acid methyl). ester).
  • the hole transport layer is made of, for example, PEDOT: PSS.
  • Examples of materials used to form the photoelectric conversion layer 3 include phthalocyanine (Pc: Phthhalocyanine), zinc phthalocyanine (ZnPc: Zinc- phthalocyanine), Me-Ptcdi (N, N'-dimethyl perylene-3,4,9,10). -dicarboximide) and fullerene (C 60: Buckminster fullerene). These materials are used for vacuum deposition, for example.
  • MDMO-PPV poly [2-methoxy-5- (3,7-dimethyl-octyloxy)]-1,4-phenylene-vinylene
  • PCDTBT poly [N-9'-hepta-decanyl-2,7-carbazole-alt-5,5- (4 ', 7'-di-thienyl-2'1', 3'-b3nzothiadizaole)]
  • PC60BM 6-phenyl-C61-butyric acid methyl ester
  • PC70BM 6-,6-phenyl-C71-butyric acid methyl ester
  • the photoelectric conversion layer 3 includes a non-power generation region 30, a power generation region 31 and a design display unit 35, a plurality of openings 38, a fifth inner retraction edge 301, and a fifth outer retraction edge 302.
  • the non-power generation region 30 and the power generation region 31 are hatched with a plurality of discrete points.
  • the design display part 35 is a part that constitutes a design that appears through the first conductive layer 1 and appears on the exterior.
  • the design which the design display part 35 comprises refers to what can be visually recognized as visually peculiar parts, such as a character, a symbol, and a design, when a user etc. look.
  • the design display unit 35 represents an annular shape.
  • the design display unit 35 is configured by a through-hole portion 350.
  • the penetrating part 350 is a part having a mode of penetrating the photoelectric conversion layer 3 in the thickness direction. Such a penetrating portion 350 appears through the first conductive layer 1.
  • the penetrating portion 350 exposes the second conductive layer 2 to the first conductive layer 1 side. That is, a part of the second conductive layer 2 appears on the exterior through the through part 350.
  • the power generation region 31 is a region that is sandwiched between the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 and contributes to power generation by exhibiting a photoelectric conversion function.
  • the shape of the power generation region 31 matches the first electrode part 11 and the second electrode part 21 in plan view.
  • the non-power generation region 30 is a region of the photoelectric conversion layer 3 that does not overlap the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 in plan view. 1 overlaps the first end 14 of the first. The first end portion 14 is in contact with the second end portion 24 of the second conductive layer 2, and the aggregated holes and electrons are immediately combined. For this reason, the non-power generation region 30 does not contribute to power generation. That is, a region other than the plurality of power generation regions 31 in the photoelectric conversion layer 3 is a non-power generation region 30.
  • the non-power generation region 30 is an end region 34.
  • the end region 34 has a penetrating portion 350 (design display portion 35).
  • the end region 34 includes a through portion 350 (design display portion 35) included in the first end portion 14 of the first conductive layer 1 in plan view, and overlaps the first end portion 14 of the first conductive layer 1. ing.
  • the end region 34 overlaps the second end 24 of the second conductive layer 2.
  • the first end portion 14 of the first conductive layer 1 and the second end portion 24 of the second conductive layer 2 are in contact with each other through the through portion 350 of the end region 34.
  • the plurality of openings 38 are openings that penetrate the photoelectric conversion layer 3 in the thickness direction.
  • two openings 38 are provided.
  • the upper opening 38 in FIG. 120 is provided to make the speaker 705 function, for example.
  • the largest opening 38 in the center in the drawing is provided to display the information displayed by the display unit 702 on the appearance.
  • the fifth inward retracting edge 301 is an edge that defines the central opening 38 in the drawing.
  • the fifth inward retracting edge 301 is an edge that surrounds the opening 38 from four directions and has a rectangular ring shape in plan view.
  • the fifth inward retracting edge 301 is not limited to a shape surrounding the opening 38 from four directions.
  • the fifth inward retracting edge 301 may be configured such that the opening 38 is opened outward from the power generation region 31 in a plan view by adjoining the opening 38 from three directions.
  • the fifth inward retracting edge 301 may be provided in two or only one with respect to the opening 38.
  • the fifth inward retracting edge 301 is retracted inward (opposite to the direction extending into the opening 18) than the third end edge 101.
  • the fifth outer retreat end edge 302 is inward in a plan view than a first outer end edge 422 of a passivation layer 42 and a second outer end edge 452 of the protective resin layer 45 described later. It is retracted (to the right in FIG. 116).
  • the fifth outward retracting edge 302 is annular in plan view.
  • the first extending portion 15 is connected to the first electrode portion 11 in the organic thin film solar cell module A13.
  • the second end portion 24 is connected to the second electrode portion 21.
  • the second end portion 24 is in contact with the first end portion 14 through the through portion 350 of the end region 34.
  • a second extending portion 16 is connected to the first end portion 14.
  • the 1st extension part 15 and the 2nd extension part 16 function as an output terminal of organic thin film solar cell module A13.
  • the passivation layer 42 is laminated on the second conductive layer 2 and protects the second conductive layer 2 and the photoelectric conversion layer 3.
  • the passivation layer 42 is made of, for example, SiN or SiON.
  • the thickness of the passivation layer 42 is, for example, 0.5 ⁇ m to 2.0 ⁇ m. In the present embodiment, the thickness is, for example, about 1.5 ⁇ m.
  • the protective resin layer 45 is a layer that covers the passivation layer 42.
  • the protective resin layer 45 is made of, for example, an ultraviolet curable resin.
  • the thickness of the protective resin layer 45 is, for example, 3 ⁇ m to 20 ⁇ m. In the present embodiment, the thickness is, for example, about 10 ⁇ m.
  • the protective resin layer 45 has a plurality of openings 458, a second end edge 451, and a second outer end edge 452. In FIG. 122, the protective resin layer 45 is hatched.
  • the plurality of openings 458 is a mode in which a part of the protective resin layer 45 is removed, and penetrates the protective resin layer 45.
  • two openings 458 are provided.
  • the upper opening 458 in the drawing is provided to allow the speaker 705 to function, for example.
  • the largest opening 458 in the center in the drawing is provided to display the information displayed by the display unit 702 on the appearance.
  • the second edge 451 is an edge that defines the central opening 458 in the drawing.
  • the second end edge 451 is an end edge that surrounds the opening 458 from four directions, and has a rectangular ring shape in plan view.
  • the second end edge 451 is not limited to a shape surrounding the opening 458 from four sides.
  • the second edge 451 may be adjacent to the opening 458 from three directions, so that the opening 458 opens outward from the protective resin layer 45 in plan view.
  • the second end edge 451 may be provided in two or only one with respect to the opening 458.
  • the second outer end edge 452 is located on the opposite side of the second end edge 451 across at least a part of the photoelectric conversion layer 3 in plan view, and in this embodiment, the outer peripheral end of the protective resin layer 45. It is an edge.
  • the passivation layer 42 has a first edge 421 and a first outer edge 422.
  • the first end edge 421 coincides with the second end edge 451 in plan view. In the present embodiment, the first end edge 421 forms a surface continuous with the second end edge 451.
  • the first outer end edge 422 coincides with the second outer end edge 452 in plan view. In the present embodiment, the first outer end edge 422 forms a surface that is continuous with the second outer end edge 452.
  • a part of the support substrate 41 is exposed as an exposed region 411 from an opening 458 that is a region surrounded by the second end edge 451 and the first end edge 421.
  • the exposed region 411 is not covered with the first conductive layer 1 or the like, and the surface of the support substrate 41 is directly exposed.
  • the bypass conductive portion 5 is for configuring a path having a lower resistance than the first conductive layer 1 for collecting holes that have reached the first conductive layer 1.
  • the bypass conductive portion 5 includes two bus bar portions 51, a plurality of connecting portions 52, and two pole collecting portions 53.
  • the bypass conductive portion 5 is made of a material having a resistance lower than that of the first conductive layer 1 and contains, for example, Ag or carbon.
  • one bus bar portion 51 covers the second end edge 451 and the first end edge 421 over the entire length.
  • the bus bar portion 51 covers a portion of the first conductive layer 1 located between the third end edge 101 and the first end edge 421 (second end edge 451). Further, the inner edge of the bus bar portion 51 coincides with the third edge 101 in plan view.
  • the other bus bar portion 51 covers the second outer end edge 452 and the first outer end edge 422 over the entire length.
  • the bus bar portion 51 covers the extending portion 103 of the first conductive layer 1. With such a configuration, each of the two bus bar portions 51 is electrically connected to the first conductive layer 1.
  • the plurality of connecting portions 52 are portions formed on the protective resin layer 45, and connect the inner bus bar portion 51 in FIG. 122 and the outer connecting portion 52 in the drawing.
  • One of the two current collectors 53 is electrically connected to the first conductive layer 1, and the other is electrically connected to the second conductive layer 2.
  • FIG. 123 is a plan view showing the first conductive layer 1 of the organic thin-film solar cell module A14.
  • FIG. 124 is a plan view showing the photoelectric conversion layer 3 of the organic thin film solar cell module A14.
  • FIG. 125 is a plan view showing the second conductive layer 2 of the organic thin-film solar cell module A14.
  • 126 is a plan view showing the protective resin layer 45 and the bypass conductive portion 5 of the organic thin-film solar cell module A14.
  • the opening 18, the opening 28, the opening 38, the opening 458 and the like for displaying the display portion 702 on the appearance are not provided.
  • the 3rd edge 101, the 4th inward retracting edge 201, the 5th inward retracting edge 301, the 1st end edge 421, and the 2nd end edge 451 are not provided.
  • the bypass conductive portion 5 has a bus bar portion 51 along the outer periphery, and does not have a connecting portion 52.
  • the photoelectric conversion layer 3 is provided with a plurality of through portions 350 (35).
  • Each of these penetrating portions 350 represents an alphabet.
  • the point where the first end portion 14 of the first conductive layer 1 and the second end portion 24 of the second conductive layer 2 are in contact with each other using the through portion 350 is the same as that of the organic thin film solar cell module A13. .
  • FIGS. 127 to 134 show a process of generating a cross-sectional structure taken along the line CXVI-CXVI of the electronic apparatus B13 shown in FIG.
  • a support substrate 41 is prepared as shown in FIG.
  • the first conductive film 10 made of ITO is laminated on one surface of the support substrate 41 by a general method such as sputtering.
  • patterning is performed on the ITO to form patterns such as openings 18 and slits 19.
  • a patterning technique to ITO for example, a technique using wet etching, a technique using oxygen plasma etching, and a technique using laser patterning such as Green laser light are appropriately employed.
  • the 1st electrically conductive film 10 is not restricted above, For example, you may make it form by patterning ITO directly on the support substrate 41 by the method using nanoimprint.
  • the photoelectric conversion layer 3 is formed by, for example, depositing an organic film on the support substrate 41 and the first conductive film 10 by spin coating and then using oxygen plasma etching and laser patterning to perform fifth inward retraction. This is done by finishing the structure having an end edge 301, a fifth outward retracting end edge 302, an opening 38, and a penetrating part 350 (design display part 35).
  • the photoelectric conversion layer 3 is not limited to the above, and an organic film is directly patterned on the support substrate 41 and the first conductive film 10 by a technique such as a slit coating method, a capillary coating method, or gravure printing. It may be formed by.
  • the second conductive layer 2 is formed.
  • the second conductive layer 2 is formed, for example, by forming a metal film on the support substrate 41, the first conductive film 10 and the photoelectric conversion layer 3 using the above-described metal by vacuum heating vapor deposition.
  • the metal film is patterned by etching using, for example, a mask layer. By this patterning, the second conductive layer 2 having the fourth inner withdrawal edge 201 and the fourth outer withdrawal edge 202 is formed on the photoelectric conversion layer 3.
  • an insulating film 420 is formed.
  • the insulating film 420 is formed by forming a film such as SiN or SiON on the support substrate 41, the first conductive layer 1, the photoelectric conversion layer 3, and the second conductive layer 2 by, for example, plasma CVD.
  • a protective resin layer 45 is formed.
  • the protective resin layer 45 is formed by applying a liquid resin material containing, for example, an ultraviolet curable resin on the insulating film 420 by screen printing and irradiating it with ultraviolet rays. Thereby, the protective resin layer 45 having the second end edge 451 and the second outer end edge 452 is obtained.
  • the insulating film 420 is patterned using the protective resin layer 45 as a mask.
  • This patterning is performed, for example, by wet etching using hydrofluoric acid containing 0.55% to 4.5% hydrogen fluoride.
  • hydrofluoric acid does not substantially dissolve the protective resin layer 45 made of an ultraviolet curable resin, but selectively dissolves the insulating film 420 made of SiN or the like. Further, hydrofluoric acid hardly dissolves the first conductive film 10 made of ITO or the like.
  • a passivation layer 42 having a first edge 421 and a first outer edge 422 is formed.
  • the first edge 421 coincides with the second edge 451 in plan view.
  • the first edge 421 and the second edge 451 form a continuous surface.
  • the first outer end edge 422 coincides with the second outer end edge 452 in plan view.
  • the first outer end edge 422 and the second outer end edge 452 form a continuous surface.
  • the bypass conductive portion 5 is formed.
  • the bypass conductive portion 5 is formed by, for example, applying a paste containing Ag or carbon and then curing the paste by a technique such as drying.
  • the first conductive film 10 is patterned. This patterning is performed, for example, using aqua regia in which concentrated hydrochloric acid and concentrated nitric acid are mixed at a ratio of 3: 1. By this patterning, portions of the first conductive film 10 exposed from the bypass conductive portion 5 and the protective resin layer 45 are selectively removed. As a result, the first conductive layer 1 having the third edge 101 and the like is formed. By passing through the above process, organic thin-film solar cell module A13 is obtained.
  • the organic thin film solar cell module A14 can be manufactured in the same manner.
  • the support substrate 41 is exposed in a region adjacent to the second end edge 451 and the second outer end edge 452.
  • the passivation layer 42 and the protective resin layer 45 are not formed. Therefore, it is possible to finish this portion more transparent, and the display portion 702 can be expressed more clearly.
  • the first conductive layer 1 is not formed on the support substrate 41 except for a small area covered with the bus bar portion 51 among the areas adjacent to the second edge 451 and the first edge 421.
  • the first conductive layer 1 is made of ITO, the first conductive layer 1 is visually recognized as being slightly colored depending on how light hits. In the present embodiment, it is possible to finish the region for displaying the display unit 702 in an even more transparent manner, and a more beautiful appearance can be realized.
  • the fifth inward retracting edge 301 of the photoelectric conversion layer 3 and the fourth inward retracting edge 201 of the second conductive layer 2 are separated from the first end edge 421 and the second end edge 451, thereby The two conductive layers 2 and the photoelectric conversion layer 3 can be prevented from being unduly conducted with the bypass conductive portion 5. Further, since the passivation layer 42 is interposed between the fourth inner retracting edge 201 and the fifth inner retracting edge 301 and the first end edge 421 and the second end edge 451, the second conductive layer 2 and the photoelectric conversion layer 3 and the bus bar portion 51 of the bypass conductive portion 5 can be more reliably prevented from short-circuiting.
  • the passivation layer 42 having the same shape as the protective resin layer 45 can be formed by patterning the insulating film 420 using the protective resin layer 45 as a mask. That is, if the protective resin layer 45 is formed using a material excellent in shape formation such as an ultraviolet curable resin, the passivation layer 42 made of a material not necessarily excellent in shape formation can be finished in a desired shape.
  • the protective resin layer 45 may be removed after the passivation layer 42 is formed. However, when the protective resin layer 45 is left, the effect of preventing intrusion of moisture and particles into the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3 and the like, and the organic thin film solar cell module A13 The effect of improving strength can be expected.
  • the bypass conductive portion 5 By providing the bypass conductive portion 5, the holes diffused in the first conductive layer 1 can be guided to the collector portion 53 via the bus bar portion 51. Since the bypass conductive portion 5 has a lower resistance than the first conductive layer 1, it is possible to prevent power from being converted into heat. This reduces power generation loss of the organic thin film solar cell module A13 and the organic thin film solar cell module A14, and is suitable for power generation by the power generation region 31 having a larger area.
  • the connecting portion 52 of the bypass conductive portion 5 is not an end face of the first conductive layer 1 but in a plan view of the first conductive layer 1.
  • the structure is in contact with a portion having a significant area (such as the extension 103). This is advantageous for reliable conduction while lowering the contact resistance between the first conductive layer 1 and the bypass conductive portion 5.
  • FIG. 135 shows a modification of the electronic device B13 and the organic thin film solar cell module A13.
  • the third edge 101 of the first conductive layer 1 coincides with the first edge 421 and the second edge 451 in plan view.
  • the inner bus bar portion 51 in the above-described example is not provided.
  • Such a modification is formed by applying patterning using aqua regia to the first conductive film 10 described above using the protective resin layer 45 as a mask.
  • FIG. 136 shows a modification of the electronic device B13 and the organic thin film solar cell module A13.
  • the first conductive layer 1 has a third inward retracting edge 102 instead of the third end edge 101.
  • the third inward retracting edge 102 is retracted inward from the first end edge 421 and the second end edge 451 in a plan view.
  • the inner bus bar portion 51 in the above-described example is not provided.
  • Such a modification is manufactured by forming the third inward retracting edge 102 together with the slit 19 and the like after laminating the first conductive film 10 on the support substrate 41.
  • FIGS. 137 to 139 show an organic thin film solar cell module according to a fifteenth embodiment of the present invention.
  • the organic thin-film solar cell module A15 of this embodiment includes a first conductive layer 1, a second conductive layer 2, a photoelectric conversion layer 3, a support substrate 41, a passivation layer 42, a protective resin layer 45, and a bypass conductive portion 5.
  • the planar view shape of the organic thin film solar cell module A15 is not particularly limited, and the illustrated example is an example in the case of the same planar view shape as the organic thin film solar cell module A13 described above.
  • FIG. 137 is an enlarged cross-sectional view of a main part corresponding to FIG. 116 in the organic thin film solar cell module A13.
  • FIG. 138 is a plan view of relevant parts showing the protective resin layer and the bypass conductive portion of the organic thin-film solar cell module A15.
  • FIG. 139 is an enlarged plan view of a main part in which the protective resin layer 45 and the bypass conductive portion 5 are omitted.
  • the first edge 421 and the first outer edge 422 of the passivation layer 42 of the present embodiment are uneven end faces. Further, as a whole, the first edge 421 is inclined in a direction away from the third edge 101 in plan view as the distance from the support substrate 41 in the thickness direction of the support substrate 41 is increased. Further, the first outer end edge 422 as a whole is inclined in a direction away from the extending portion 103 of the first conductive layer 1 as it is separated from the support substrate 41 in the thickness direction of the support substrate 41.
  • the first end edge 421 of the present embodiment has a non-linear shape separated from the third end edge 101 in plan view.
  • the first end edge 421 has, for example, a shape in which a plurality of broken lines and curves are combined.
  • the first outer end edge 422 has a linear shape in plan view.
  • the bypass conductive part 5 has two bus bar parts 51 and a connecting part 52.
  • the bypass conductive portion 5 is made of a material having a resistance lower than that of the first conductive layer 1 and contains, for example, Ag or carbon.
  • One bus bar portion 51 covers the first edge 421 of the passivation layer 42 over the entire length.
  • the bus bar portion 51 covers a portion of the first conductive layer 1 located between the third end edge 101 and the first end edge 421. Further, the inner end edge of the bus bar portion 51 protrudes from the third end edge 101 in plan view. Accordingly, the bus bar portion 51 is in direct contact with the support substrate 41.
  • the other bus bar portion 51 covers the first outer end edge 422 of the passivation layer 42 over the entire length.
  • the bus bar portion 51 covers the extending portion 103 of the first conductive layer 1.
  • the bus bar portion 51 is in direct contact with the support substrate 41. With such a configuration, each of the two bus bar portions 51 is electrically connected to the first conductive layer 1.
  • the connecting part 52 is a part formed on the surface 423 of the passivation layer 42.
  • the connection part 52 connects the bus bar part 51 to parts other than the bus bar part 51 and the connection part 52 of the two bus bar parts 51 or the bypass conductive part 5, for example.
  • the protective resin layer 45 covers the passivation layer 42 and the bypass conductive portion 5, and is made of, for example, an ultraviolet curable resin.
  • the protective resin layer 45 may also serve as a transparent bonding layer for bonding the organic thin film solar cell module A15 and the display unit 702 described above.
  • the second end edge 451 and the second outer end edge 452 of the protective resin layer 45 extend from a portion of the surface 423 of the passivation layer 42 exposed from the bus bar portion 51 in a plan view, and passivated. It exceeds the first edge 421 and the first outer edge 422 of the layer 42 and the bypass conductive portion 5.
  • the protective resin layer 45 has a portion that directly contacts the support substrate 41. Further, the protective resin layer 45 is in close contact with a portion of the surface 423 of the passivation layer 42 exposed from the bypass conductive portion 5.
  • FIG. 137 is shown upside down for convenience of understanding.
  • the support substrate 41 shown in FIG. 127 is prepared. Then, as shown in FIG. 128, the first conductive film 10 made of ITO is laminated on one surface of the support substrate 41 by a general method such as sputtering. Next, the photoelectric conversion layer 3 is formed as shown in FIG. 129, and the second conductive layer 2 is formed as shown in FIG.
  • the first conductive film 10 is patterned by a technique using laser patterning using laser light Lz1. Thereby, a slit 191 and a slit 192 are formed in the first conductive film 10.
  • the laser beam Lz1 is not particularly limited as long as the first conductive film 10 can be subjected to laser patterning. For example, an IR laser beam can be used.
  • the edges of the first conductive film 10 constituting the slit 191 the one located on the second conductive layer 2 and the photoelectric conversion layer 3 side shown is the third edge 101.
  • a portion of the first conductive film 10 between the slit 192 and the fifth outer retraction edge 302 of the photoelectric conversion layer 3 becomes an extension portion 103.
  • patterning for forming the slit 191 and the slit 192 in the first conductive film 10 may be performed.
  • a technique used for the patterning for example, a technique using wet etching, a technique using oxygen plasma etching, or the like is appropriately employed.
  • the first conductive film 10 is not limited to the above, and may be formed by patterning ITO directly on the support substrate 41 by, for example, a technique using nanoimprint.
  • an insulating film 420 is formed.
  • the insulating film 420 is formed by forming a film such as SiN or SiON on the support substrate 41, the first conductive film 10, the photoelectric conversion layer 3, and the second conductive layer 2 by, for example, plasma CVD.
  • a step of exposing the support substrate 41 in a region adjacent to the edge 421 is performed.
  • the step of exposing the support substrate 41 is performed by irradiating the first conductive film 10 with the laser light Lz2 through the insulating film 420, as shown in FIG.
  • a process of partially removing the insulating film 420 is included.
  • a hatched portion of a plurality of relatively dark discrete points in the first conductive film 10 represents a portion irradiated with the laser light Lz2.
  • a hatched portion of a plurality of relatively thin discrete points in the insulating film 420 represents a portion that is removed due to irradiation with the laser light Lz2.
  • the method is not limited to the method using the laser beam Lz2, and for example, a method using etching may be selected.
  • the laser beam Lz2 for example, an IR laser beam having a wavelength of about 1,064 nm is selected.
  • the portion of the first conductive film 10 irradiated with the laser light Lz2 exhibits a behavior that volatilizes instantaneously when significant energy is applied.
  • the wavelength of the laser beam Lz2 described above is selected such that the insulating film 420 is less likely to absorb than the first conductive film 10. For this reason, the insulating film 420 is not directly destroyed by the laser beam Lz2. However, the portion of the insulating film 420 that contacts the first conductive film 10 is supported by the support substrate 41 via the first conductive film 10. When the first conductive film 10 is volatilized by irradiation with the laser beam Lz2, a part of the insulating film 420 is not supported by the support substrate 41.
  • the insulating film 420 overlapping the portion of the first conductive film 10 irradiated with the laser light Lz2 is the first conductive film. Part of it is scattered by the pressure due to volatilization of 10.
  • the portion of the insulating film 420 adjacent to the portion of the first conductive film 10 irradiated with the laser light Lz2 is scattered due to the volatility of the first conductive film 10. did.
  • the portion of the insulating film 420 that is scattered due to the irradiation of the laser beam Lz2 is hatched with a plurality of relatively thin discrete points.
  • the scattered portion of the insulating film 420 exists on the second conductive layer 2 and photoelectric conversion layer 3 side beyond the slit 191 and the slit 192.
  • the size and position of the slit 191 and the slit 192 and the irradiation range and output of the laser beam Lz2 are set so that the passivation layer 42 is not destroyed to the extent that the second conductive layer 2 and the photoelectric conversion layer 3 are partially exposed. Adjust as appropriate. As a result, the edge located on the slit 191 side of the insulating film 420 becomes the first edge 421, and the edge located on the slit 192 side becomes the first outer edge 422. Moreover, the hatching part which consists of several discrete points adjacent to the slit 191 among the 1st electrically conductive films 10 is removed by irradiation of the laser beam Lz2.
  • the edge located in the photoelectric conversion layer 3 side in planar view with respect to the slit 191 in the first conductive film 10 becomes the third edge 101.
  • the hatching part which consists of a some discrete point adjacent to the slit 192 among the 1st electrically conductive films 10 is removed by irradiation of the laser beam Lz2.
  • a part of the insulating film 420 adjacent to the slit 192 is scattered with the irradiation of the laser light Lz 2, so that a part of the first conductive film 10 adjacent to the slit 192 is exposed from the passivation layer 420. This part becomes the extension part 103.
  • the first edge 421 and the first outer edge 422 are obtained.
  • a passivation layer 42 is formed.
  • the first conductive layer 1 having portions extending from the first end edge 421 and the first outer end edge 422 is formed.
  • the third end edge 101 and the extending portion 103 are formed.
  • a cleaning process using aqua regia may be performed, for example.
  • the bypass conductive portion 5 is formed as shown in FIG.
  • the bypass conductive portion 5 is formed.
  • the bypass conductive portion 5 is formed by, for example, applying a paste containing Ag or carbon and then curing the paste by a technique such as drying.
  • the bypass conductive portion 5 is formed so as to cover a portion of the first conductive layer 1 extending from the passivation layer 42.
  • the bypass conductive portion 5 is preferably formed so as to directly touch the support substrate 41. Thereby, the bypass conductive part 5 having the bus bar part 51 and the connecting part 52 is obtained.
  • a protective resin layer 45 is formed so as to cover the bypass conductive portion 5 and the passivation layer 42.
  • the protective resin layer 45 is formed by, for example, applying a liquid resin material containing an ultraviolet curable resin on the passivation layer 42 by screen printing and irradiating it with ultraviolet rays.
  • the organic thin film solar cell module A15 shown in FIG. 137 is completed.
  • a protective resin layer 45 that covers the bypass conductive portion 5 may be further provided.
  • bypass conductive portion 5 is covered with the protective resin layer 45, it is possible to avoid the bypass conductive portion 5 being exposed to the outside air. Thereby, it can suppress that the bypass conductive part 5 corrodes etc., and low resistance by the bypass conductive part 5 can be maintained over a longer period of time.
  • the passivation layer 42 is removed by utilizing volatilization of the first conductive layer 1 generated by irradiating the first conductive layer 1 with the laser light Lz2. Therefore, there is no need for a dedicated laser beam or drug for removing the passivation layer 42. This is preferable for reducing manufacturing costs and manufacturing time.
  • IR laser light as the laser light Lz2
  • SiN which is an example of the material of the insulating film 420, transmits light having a wavelength longer than 400 nm. For this reason, when the insulating film 420 is made of SiN, Green laser light having a wavelength of 532 nm may be used as the laser light Lz2. On the other hand, when UV laser light having a wavelength of 355 nm is used as the laser light Lz2, the insulating film 420 and the first conductive film 10 absorb the laser light Lz2, and therefore these can be removed at once. it can.
  • the partial removal of the passivation layer 42 and the first conductive layer 1 is performed using a laser beam Lz2.
  • the laser light Lz2 can control the irradiation region more accurately. Therefore, it is suitable for removing a desired portion of the passivation layer 42 and the first conductive layer 1.
  • the behavior that the passivation layer 42 adjacent to the region irradiated with the laser beam Lz2 in the first conductive layer 1 is destroyed is used.
  • the portion of the first conductive layer 1 exposed from the passivation layer 42 in FIG. 143 is removed even though the portion of the passivation layer 42 covering the portion is not irradiated with the laser beam Lz2. .
  • the passivation layer 42 can be appropriately removed while avoiding undue destruction of the portion exposed from the passivation layer 42 after the first conductive layer 1.
  • the slit 191 and the slit 192 in the first conductive layer 1 it is possible to avoid that the region of the passivation layer 42 affected by the volatilization of the first conductive layer 1 is unreasonably spread over a wide area. . Further, by providing the slit 191 and the slit 192, in the step of partially removing the first conductive film 10 shown in FIGS. 142 and 143, a part of the first conductive film 10 is formed in the region to be removed. Even if this remains, it can be avoided that the remaining portion and the first conductive layer 1 are unintentionally conducted.
  • the part located in the other side of the photoelectric converting layer 3 across the slit 192 among the 1st electrically conductive films 10 may remain
  • This portion is prevented from conducting to the first conductive layer 1 by providing the slit 192. Further, if the removal of this portion is omitted, the manufacturing time can be shortened.
  • the structure which provides the slit 191 and the slit 192 is a suitable example, and the structure which does not provide these may be sufficient.
  • FIG. 145 shows a modification of the organic thin film solar cell module A15.
  • the protective resin layer 45 has a non-light-transmitting part 454 and a light-transmitting part 455.
  • the non-light-transmissive portion 454 overlaps the bypass conductive portion 5 in a plan view and is provided in a region closer to the first outer end edge 422 than the first end edge 421.
  • the non-translucent portion 454 is made of a non-translucent material, for example, white resin.
  • the translucent portion 455 is provided in a region including a region located on the opposite side to the first outer end edge 422 with respect to the first end edge 421.
  • the translucent part 455 is formed so as to straddle the bus bar part 51 on the right side in the drawing. A part of the translucent portion 455 is in contact with the support substrate 41. Also according to this modification, the bypass conductive portion 5 can be protected. Moreover, by having the non-light-transmissive part 454, it can suppress that the bypass conductive part 5 deteriorates by receiving light, such as an ultraviolet-ray.
  • the manufacturing method of the organic thin film solar cell module, the electronic device, and the organic thin film solar cell module according to the present invention is not limited to the above-described embodiment.
  • the specific configuration of the organic thin film solar cell module, the electronic device, and the method of manufacturing the organic thin film solar cell module according to the present invention can be varied in design in various ways.
  • the electronic device according to the present invention can be applied to various electronic devices that can use solar power generation, such as a portable telephone terminal, and examples thereof include a wrist watch and an electronic calculator.
  • [Appendix 1D] A transparent support substrate; A transparent first conductive layer laminated on the support substrate; A second conductive layer; A photoelectric conversion layer comprising an organic thin film sandwiched between the first conductive layer and the second conductive layer; A passivation layer covering the second conductive layer; With The passivation layer has a first edge; The organic thin-film solar cell module in which the support substrate is exposed in a region adjacent to the first edge.
  • Appendix 2D The organic thin-film solar cell module according to appendix 1D, wherein the first conductive layer has a third edge that coincides with the first edge in plan view.
  • the protective resin layer has a second outer end edge located on the opposite side of the second end edge across at least a part of the photoelectric conversion layer in plan view;
  • the passivation layer has a first outer edge that coincides with the second outer edge in plan view,
  • the first conductive layer has an extension portion extending outward from the second outer end edge and the first outer end edge;
  • the organic thin-film solar cell module according to any one of supplementary notes 16D to 19D, comprising a bypass conductive portion that covers at least a part of the extension portion and is made of a material having a lower resistance than the material of the first conductive layer.
  • [Appendix 21D] The organic thin film solar cell module according to appendix 20D, wherein the second outer edge and the first outer edge form a continuous surface.
  • the bypass conductive part is the organic thin-film solar cell module according to appendix 20D or 21D, which covers the second outer edge and the first outer edge.
  • [Appendix 23D] The organic thin-film solar cell module according to any one of appendices 20D to 22D, wherein the bypass conductive portion includes Ag or carbon.
  • the passivation layer has a first outer end edge located on the opposite side of the first end edge across at least a part of the photoelectric conversion layer in plan view,
  • the first conductive layer has an extending portion extending outward from the first outer edge,
  • a bypass conductive portion that covers at least a portion of the extension and is made of a material having a lower resistance than the material of the first conductive layer;
  • the bypass conductive part is the organic thin-film solar cell module according to appendix 24D, which covers the first outer end edge.
  • the bypass conductive part is the organic thin-film solar cell module according to appendix 24D or 25D, containing Ag or carbon.
  • the protective resin layer includes a non-light-transmitting portion that overlaps the bypass conductive portion in a plan view and is provided in a region closer to the first outer end edge than the first end edge.
  • the non-light-transmitting portion is an organic thin-film solar cell module according to appendix 27D, which is white.
  • the second conductive layer has any one of appendices 20D to 28D having a second outer end edge and a fourth outer retreat end edge retracted inward from the first outer end edge in a plan view.
  • the organic thin film solar cell module described.
  • the photoelectric conversion layer according to any one of appendices 20D to 29D, which has a second outer retreat edge and a fifth outer retreat edge that retreats inward from the first outer end edge in a plan view.
  • Organic thin-film solar cell module [Supplementary Note 31D] An organic thin-film solar cell module according to any one of Supplementary Notes 1D to 30D; A drive unit driven by feeding from the organic thin film solar cell module; An electronic device.
  • [Appendix 32D] Laminating a transparent first conductive film on a transparent support substrate; Laminating a photoelectric conversion layer made of an organic thin film on the first conductive film; Laminating a second conductive layer on the photoelectric conversion layer; Laminating an insulating film covering the second conductive layer; Including forming a passivation layer having a first edge by partially removing the insulating film and forming a first conductive layer by partially removing the first conductive film, and adjacent to the first edge And a step of exposing the support substrate in the region, and a method of manufacturing an organic thin film solar cell module.
  • the step of exposing the support substrate includes: Forming the passivation layer having the first edge coincident with the second edge in plan view by partially removing the insulating film with the second edge as a boundary; Forming the first conductive layer by removing portions of the first conductive film exposed from the first edge and the second edge of the first conductive film, and the organic thin-film solar cell module according to appendix 32D Manufacturing method.
  • [Appendix 34D] The organic thin-film solar cell according to appendix 33D, wherein in the step of exposing the support substrate, the first conductive layer having the second end edge and the third end edge that coincides with the first end edge in plan view is formed.
  • Appendix 35D The method for manufacturing an organic thin-film solar cell module according to Appendix 34D, wherein the second end edge and the first end edge are annular in plan view.
  • [Appendix 36D] The method for producing an organic thin-film solar cell module according to Supplementary Note 35D, wherein the third end edge is annular in plan view.
  • [Appendix 37D] The method for manufacturing an organic thin-film solar cell module according to any one of appendices 33D to 36D, wherein the first conductive layer is made of ITO.
  • [Appendix 38D] The method for manufacturing an organic thin-film solar cell module according to any one of appendices 33D to 37D, wherein the second conductive layer is made of metal.
  • [Appendix 39D] The method for manufacturing an organic thin-film solar cell module according to attachment 38D, wherein the second conductive layer is made of Al.
  • [Appendix 40D] The method for manufacturing an organic thin-film solar cell module according to any one of appendices 33D to 39D, wherein the passivation layer is made of SiN.
  • [Appendix 41D] The method for manufacturing an organic thin-film solar cell module according to any one of Supplementary Notes 33D to 40D, wherein the protective resin layer is made of an ultraviolet curable resin.
  • Appendix 42D In the step of laminating the protective resin layer, forming a second outer edge located on the opposite side of the second edge with at least a part of the photoelectric conversion layer in plan view, Forming on the passivation layer having a first outer edge that coincides with the second outer edge in plan view by partially removing the insulating film with the second edge as a boundary;
  • the first conductive layer covers at least a part of the second outer end edge and an extended portion extending outward from the first outer end edge, and is lower than the material of the first conductive layer.
  • Appendix 43D In the step of forming the bypass conductive portion, the organic thin-film solar cell module manufacturing method according to appendix 42D, wherein the bypass conductive portion covers the second outer end edge and the first outer end edge.
  • the said bypass conductive part is a manufacturing method of the organic thin-film solar cell module of Additional remark 42D or 43D containing Ag or carbon.
  • the step of exposing the support substrate includes a process of partially removing the first conductive film and the insulating film by irradiating the first conductive film with laser light through the insulating film.
  • the step of exposing the support substrate includes removing the region adjacent to the region irradiated with the laser beam in plan view in the insulating film by the partial removal process. Among them, including a process of setting a portion that is not irradiated with the laser light as an extending portion exposed from the passivation layer, Forming a bypass conductive portion that covers at least a portion of the extension and is made of a material having a lower resistance than the material of the first conductive layer; And a step of forming a protective resin layer covering the bypass conductive portion.
  • the bypass conductive part is a method for manufacturing an organic thin-film solar cell module according to appendix 46D, which includes Ag or carbon.
  • Appendix 48D In the step of forming the protective resin layer, a non-light-transmitting portion is formed in a region that overlaps the bypass conductive portion in a plan view and is closer to the first outer edge than the first edge.
  • the organic thin film solar cell module according to 1.
  • “transparent” is defined as having a transmittance of about 50% or more. “Transparent” is also used to mean colorless and transparent to visible light. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.
  • FIGS. 146 to 151 show an electronic device based on the sixteenth embodiment of the present invention and an organic thin-film solar cell module based on the sixteenth embodiment of the present invention.
  • the electronic device B16 of this embodiment includes an organic thin-film solar cell module A16, a case 61, a control unit 701, a display unit 702, an input unit 703, a microphone 704, a speaker 705, a wireless communication unit 706, and a battery 707.
  • Type telephone terminal is an organic thin-film solar cell module A16, a case 61, a control unit 701, a display unit 702, an input unit 703, a microphone 704, a speaker 705, a wireless communication unit 706, and a battery 707.
  • the case 61 accommodates other components of the electronic device B16 and is made of a material such as metal, resin, or glass.
  • FIG. 146 is a plan view showing an organic thin-film solar cell module A16 and an electronic device B16 using the same.
  • FIG. 147 is a schematic sectional view taken along line CXLVII-CXLVII in FIG. 146.
  • FIG. 148 is an enlarged bottom view of the main part showing the organic thin film solar cell module A16.
  • FIG. 149 is an enlarged cross-sectional view of a main part taken along line CXLIX-CXLIX in FIG. 150 is an enlarged cross-sectional view of a main part taken along line CL-CL in FIG.
  • FIG. 151 is a system configuration diagram showing the electronic apparatus B16.
  • FIG. 147 is a schematic sectional view taken along line CXLVII-CXLVII in FIG. 146.
  • FIG. 148 is an enlarged bottom view of the main part showing the organic thin film solar cell module A16.
  • FIG. 149 is an enlarged cross-sectional view of a main part taken along line CXLI
  • Organic thin-film solar cell module A16 is a power supply module in electronic device B16, and converts light such as sunlight into electric power. A specific configuration will be described later.
  • the control unit 701 corresponds to an example of a driving unit in the present invention, and is driven by power feeding from the organic thin film solar cell module A16.
  • the control unit 701 may be directly supplied with power from the organic thin film solar cell module A16, or may be driven by power supplied from the battery 707 after the power from the organic thin film solar cell module A16 is once charged in the battery 707. May be.
  • the control unit 701 includes, for example, a CPU, a memory, an interface, and the like.
  • the display unit 702 is for displaying various types of information on the external appearance of the electronic device B16.
  • the display unit 702 is, for example, a liquid crystal display panel or an organic EL display panel. In the present embodiment, the display unit 702 displays information on the exterior through the organic thin film solar cell module A16.
  • the input unit 703 is for outputting a user operation as an electrical signal to the control unit 701.
  • the input unit 703 is a touch panel laminated on the display unit 702, for example. Note that the display unit 702 and the input unit 703 may be configured integrally.
  • the microphone 704 is a device that converts a user's voice into an electrical signal.
  • the speaker 705 is a device that outputs the voice of the other party and various notification sounds.
  • the wireless communication unit 706 is a device that performs bidirectional wireless communication conforming to the wireless communication standard.
  • the battery 707 is a device that stores electric power for driving the electronic device B16.
  • the battery 707 is configured to be appropriately charged / discharged.
  • the battery 707 is charged by feeding from commercial power using an adapter (not shown) or feeding from the organic thin film solar cell module A16.
  • the organic thin-film solar cell module A16 includes a first conductive layer 1, a second conductive layer 2, a photoelectric conversion layer 3, a support substrate 41, a passivation layer 42, a protective resin layer 4, and a bypass conductive portion 5.
  • the organic thin-film solar cell module A16 has a substantially rectangular shape in plan view, but this is an example, and each may have various shapes.
  • FIG. 152 is an exploded perspective view of a main part showing the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3, the support substrate 41, and the protective resin layer 4 in the organic thin film solar cell module A16.
  • the support substrate 41 is indicated by an imaginary line (two-dot chain line).
  • FIG. 153 is a plan view showing the first conductive layer 1 of the organic thin film solar cell module A16.
  • FIG. 154 is a plan view showing the photoelectric conversion layer 3 of the organic thin film solar cell module A16.
  • FIG. 155 is a plan view showing the second conductive layer 2 of the organic thin film solar cell module A16.
  • FIG. 156 is a bottom view showing a first protective resin layer 45 and a bypass conductive portion 5 described later of the protective resin layer 4 of the organic thin film solar cell module A16.
  • FIG. 157 is a plan view showing a second protective resin layer 46 described later of the protective resin layer 4 of the organic thin film solar cell module A16.
  • the support substrate 41 is a member that becomes a base of the organic thin film solar cell module A16.
  • the support substrate 41 is made of, for example, transparent glass or resin.
  • the thickness of the support substrate 41 is, for example, 0.05 mm to 2.0 mm.
  • the first conductive layer 1 is formed on the support substrate 41.
  • the first conductive layer 1 is transparent and is made of ITO in this embodiment.
  • the first conductive layer 1 includes the first electrode portion 11, the connection portion 13, the slit 17, the display opening 181, the opening 18, the slit 193, the third edge 101, It has a third outer end edge 105, a first extension part 104, and a second extension part 103.
  • the first conductive layer 1 has a substantially rectangular shape in plan view, but this is an example of the shape of the first conductive layer 1.
  • the shape of the first conductive layer 1 can be set to various shapes.
  • the thickness of the first conductive layer 1 is, for example, 100 nm to 300 nm.
  • the first electrode portion 11 is a layer in which holes generated by the photoelectric conversion layer 3 are aggregated, and functions as a so-called anode electrode. In the present embodiment, most of the first conductive layer 1 is a single first electrode portion 11.
  • the opening 18 is an opening portion penetrating the first conductive layer 1 in the thickness direction.
  • the opening 18 is provided to allow the speaker 705 to function, for example.
  • the first conductive layer 1 may have a plurality of openings 18.
  • the use of the opening 18 is not particularly limited, and may be used to exhibit functions such as a part for realizing a call and a camera module.
  • the display opening 181 is provided to display the information displayed by the display unit 702 on the appearance. In the present embodiment, the display opening 181 has a rectangular shape in plan view.
  • the slit 193 is an annular slit and partitions a part of the first conductive layer 1 from the first electrode portion 11.
  • the third edge 101 is an edge that defines the display opening 181.
  • the third edge 101 is an edge that surrounds the display opening 181 from four directions, and has a rectangular ring shape in plan view.
  • the third end edge 101 is not limited to a shape surrounding the display opening 181 from four directions.
  • the third opening edge 101 may be adjacent to the display opening 181 from three directions so that the display opening 181 opens outward from the first electrode portion 11 in plan view.
  • the third end edge 101 may be adjacent to the display opening 181 from two sides or only from one side.
  • the support substrate 41 is exposed from a region adjacent to the third edge 101, that is, from the display opening 181.
  • the third edge 101 is an inner edge of a portion of the first conductive layer 1 that extends from a second edge 451 of the first protective resin layer 45 described later and the first edge 421 of the passivation layer 42. ing.
  • the first extending portion 104 is a portion extending from the passivation layer 42 inward (display opening 181).
  • the second extending portion 103 is provided on substantially the entire inner peripheral portion of the first conductive layer 1.
  • the second extending portion 103 is a portion that extends outward from the passivation layer 42.
  • the second extending portion 103 is provided on substantially the entire outer peripheral portion of the first conductive layer 1.
  • the third outer end edge 105 is an outer peripheral end edge of the second extending portion 103.
  • connection portion 13 is partitioned by the slit 17 and is a portion insulated from the first electrode portion 11 by the slit 17.
  • the slit 17 has both ends 171 reaching the third outer edge 105.
  • the connection part 13 includes a connection part edge 131 and a connection extension part 132.
  • the connection part edge 131 is an edge of a part of the connection part 13 that does not face the slit 17. In the illustrated example, the connection portion edge 131 is formed on a substantially extended line of the adjacent third outer end edge 105.
  • the plan view shape of the slit 17 is not particularly limited, and in the illustrated example, the slit 17 has an elongated shape whose longitudinal direction is the direction in which the connection portion edge 131 (third outer edge 105) extends. Is a substantially long rectangular shape.
  • the connection extension part 132 is a part exposed from the photoelectric conversion layer 3 in plan view in the connection part 13.
  • the connection unit 13 is used, for example, to guide electrons collected by power generation in the photoelectric conversion layer 3 to the outside of the organic thin film solar cell module A16.
  • the second conductive layer 2 is laminated on the first conductive layer 1 via the photoelectric conversion layer 3. A part of the second conductive layer 2 is in direct contact with the first conductive layer 1.
  • the material of the 2nd conductive layer 2 is not specifically limited, In this embodiment, the 2nd conductive layer 2 consists of metals represented by Al, W, Mo, Mn, and Mg.
  • the second conductive layer 2 is not transparent.
  • a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second conductive layer 2 opposite to the support substrate 41.
  • the thickness of the second conductive layer 2 is, for example, 30 nm to 150 nm.
  • the second conductive layer 2 has a second electrode portion 21 and an opening 28.
  • the second conductive layer 2 has a substantially rectangular shape in plan view, but this is an example of the shape of the second conductive layer 2.
  • the shape of the second conductive layer 2 can be set to various shapes.
  • the second electrode portion 21 is a layer in which electrons generated by the photoelectric conversion layer 3 are collected, and functions as a so-called cathode electrode.
  • the plurality of openings 28 are openings that penetrate the second conductive layer 2 in the thickness direction.
  • the four upper openings 28 in FIG. 155 are provided to make the speaker 705 function, for example.
  • the largest opening 28 in the center in the figure is provided to display the information displayed by the display unit 702 on the appearance.
  • the fourth inward retracting edge 201 is an edge that defines the central opening 28 in the drawing.
  • the fourth inward retracting edge 201 is an edge that surrounds the opening 28 from four directions and has a rectangular shape in plan view.
  • the fourth inward retracting edge 201 is not limited to a shape surrounding the opening 28 from four directions.
  • the fourth inward retracting edge 201 may be configured such that the opening 28 is opened outward from the second electrode portion 21 in plan view by adjoining the opening 28 from three directions.
  • the fourth inward retracting edge 201 may be adjacent to the opening 28 from two or only one side. As shown in FIG. 149, the fourth inward retracting edge 201 is retracted inward (opposite to the direction extending into the display opening 181) than the third end edge 101.
  • the fourth outer retracting edge 202 is in a plan view than the first outer end edge 422 of the passivation layer 42 and the second outer end edge 452 of the first protective resin layer 45 described later. It is retracted inward (to the right in FIG. 149).
  • the fourth outward retracting edge 202 has an annular shape in plan view.
  • the photoelectric conversion layer 3 is sandwiched between the first conductive layer 1 and the second conductive layer 2 and laminated on the support substrate 41.
  • the photoelectric conversion layer 3 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power.
  • the specific configuration of the photoelectric conversion layer 3 is not particularly limited. For example, a bulk heterojunction organic active layer and a hole transport layer stacked on the first conductive layer 1 side with respect to the bulk heterojunction organic active layer are given. It consists of.
  • the photoelectric conversion layer 3 has a rectangular shape in plan view, but this is an example, and the photoelectric conversion layer 3 can have various shapes.
  • the thickness of the photoelectric conversion layer 3 is, for example, 50 nm to 300 nm.
  • a p-type organic active layer region and an n-type organic active layer region are mixed to form a complex bulk hetero pn junction.
  • the p-type organic active layer region is formed of, for example, P3HT (poly (3-hexylthiophene-2,5diyl)), and the n-type organic active layer region is, for example, PCBM (6,6-phenyl-C61-butyric acid methyl). ester).
  • the hole transport layer is made of, for example, PEDOT: PSS.
  • Examples of materials used to form the photoelectric conversion layer 3 include phthalocyanine (Pc: Phthhalocyanine), zinc phthalocyanine (ZnPc: Zinc- phthalocyanine), Me-Ptcdi (N, N'-dimethyl perylene-3,4,9,10). -dicarboximide) and fullerene (C 60: Buckminster fullerene). These materials are used for vacuum deposition, for example.
  • MDMO-PPV poly [2-methoxy-5- (3,7-dimethyl-octyloxy)]-1,4-phenylene-vinylene
  • PCDTBT poly [N-9'-hepta-decanyl-2,7-carbazole-alt-5,5- (4 ', 7'-di-thienyl-2'1', 3'-b3nzothiadizaole)]
  • PC60BM 6-phenyl-C61-butyric acid methyl ester
  • PC70BM 6-,6-phenyl-C71-butyric acid methyl ester
  • the photoelectric conversion layer 3 includes a non-power generation region 30, a power generation region 31, a design display unit 35, an opening 38, a fifth inner retraction edge 301, a fifth outer retraction edge 302, and a conductive layer.
  • a through portion 351 is provided.
  • the non-power generation region 30 and the power generation region 31 are hatched with a plurality of discrete points.
  • the design display unit 35 overlaps with a region surrounded by the slits 193 of the first conductive layer 1 in plan view.
  • the design display unit 35 is a part that constitutes a design that appears on the exterior.
  • the design which the design display part 35 comprises refers to what can be visually recognized as visually peculiar parts, such as a character, a symbol, and a design, when a user etc. look.
  • the design display unit 35 represents an annular shape.
  • the design display part 35 is configured by a design display through part 350.
  • the design display penetrating portion 350 is a portion having a mode of penetrating the photoelectric conversion layer 3 in the thickness direction. Such a design display penetrating portion 350 appears on the exterior.
  • the design display through-hole 350 exposes the second conductive layer 2 to the first conductive layer 1 side. That is, a part of the second conductive layer 2 appears on the exterior through the design display through-hole 350.
  • the shape or the like of the design display through-hole 350 is not particularly limited, and in the illustrated example, a shape representing an alphabet is adopted.
  • the power generation region 31 is a region that is sandwiched between the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 and contributes to power generation by exhibiting a photoelectric conversion function.
  • the shape of the power generation region 31 matches the first electrode part 11 and the second electrode part 21 in plan view.
  • the conduction through portion 351 is configured by a hole that penetrates the photoelectric conversion layer 3.
  • the conduction through portion 351 is provided at a position included in the connection portion 13 of the first conductive layer 1 in plan view.
  • a plurality of through portions 351 for conduction are provided.
  • the shape and arrangement of the conduction through portion 351 are not particularly limited.
  • the through-hole for conduction 351 has a circular shape in plan view, and its diameter is, for example, about 40 ⁇ m.
  • the plurality of through portions 351 for conduction are arranged along the longitudinal direction of the connection portion 13.
  • the connection portion 13 of the first conductive layer 1 and the second conductive layer 2 are electrically connected to each other via the conduction through portion 351.
  • the non-power generation region 30 is a region of the photoelectric conversion layer 3 that does not overlap the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 in plan view. This is an area that overlaps with the area surrounded by one connecting portion 13 and the slit 193.
  • the connection part 13 is in contact with the second conductive layer 2.
  • the non-power generation region 30 overlapping the connection portion 13 in plan view does not contribute to power generation.
  • a portion of the photoelectric conversion layer 3 that coincides with the region surrounded by the slit 193 that overlaps the design display unit 35 in plan view is a non-power generation region 30. That is, a region other than the plurality of power generation regions 31 in the photoelectric conversion layer 3 is a non-power generation region 30.
  • the plurality of openings 38 are openings that penetrate the photoelectric conversion layer 3 in the thickness direction.
  • the upper opening 38 in FIG. 154 is provided, for example, to make the speaker 705 function.
  • the largest opening 38 in the center in the drawing is provided to display the information displayed by the display unit 702 on the appearance.
  • the fifth inward retracting edge 301 is an edge that defines the central opening 38 in the drawing.
  • the fifth inward retracting edge 301 is an edge that surrounds the opening 38 from four directions and has a rectangular ring shape in plan view.
  • the fifth inward retracting edge 301 is not limited to a shape surrounding the opening 38 from four directions.
  • the fifth inward retracting edge 301 may be configured such that the opening 38 is opened outward from the power generation region 31 in a plan view by adjoining the opening 38 from three directions.
  • the fifth inward retracting edge 301 may be provided in two or only one with respect to the opening 38. Further, as shown in FIG. 149, the fifth inward retracting edge 301 is retracted inward (opposite to the direction extending into the display opening 181) than the third end edge 101.
  • the fifth outer retreating edge 302 is retreated more inwardly (rightward in FIG. 149) in a plan view than a first outer end edge 422 of a passivation layer 42 described later. ing.
  • the fifth outward retracting edge 302 is annular in plan view.
  • the passivation layer 42 is laminated on the second conductive layer 2 and protects the second conductive layer 2 and the photoelectric conversion layer 3.
  • the passivation layer 42 is made of, for example, SiN or SiON.
  • the thickness of the passivation layer 42 is, for example, 0.5 ⁇ m to 2.0 ⁇ m. In the present embodiment, the thickness is, for example, about 1.5 ⁇ m.
  • the protective resin layer 4 is a layer covering the passivation layer 42.
  • the protective resin layer 4 covers the bypass conductive portion 5.
  • the protective resin layer 4 is made of, for example, an ultraviolet curable resin.
  • the thickness of the protective resin layer 4 is, for example, 3 ⁇ m to 20 ⁇ m. In this embodiment, the thickness is, for example, about 10 ⁇ m.
  • the protective resin layer 4 includes a first protective resin layer 45 and a second protective resin layer 46.
  • the first protective resin layer 45 is a layer that covers the passivation layer 42.
  • the second protective resin layer 46 is laminated on the first protective resin layer 45 and covers the bypass conductive portion 5.
  • the first protective resin layer 45 has a plurality of openings 458, a second end edge 451, and a second outer end edge 452.
  • the plurality of openings 458 is a mode in which a part of the first protective resin layer 45 is removed, and penetrates the first protective resin layer 45.
  • the upper three openings 458 in the drawing are provided to allow the speaker 705 to function, for example.
  • the largest opening 458 in the center in the drawing is provided to display the information displayed by the display unit 702 on the appearance.
  • the second edge 451 is an edge that defines the central opening 458 in the drawing.
  • the second end edge 451 is an end edge that surrounds the opening 458 from four directions, and has a rectangular ring shape in plan view.
  • the second end edge 451 is not limited to a shape surrounding the opening 458 from four sides.
  • the second end edge 451 may be adjacent to the opening 458 from three directions so that the opening 458 opens outward from the first protective resin layer 45 in plan view.
  • the second end edge 451 may be provided in two or only one with respect to the opening 458.
  • the second outer edge 452 is located on the opposite side of the second edge 451 across at least a part of the photoelectric conversion layer 3 in plan view.
  • the second outer edge 452 of the first protective resin layer 45 is located. It is an outer peripheral edge.
  • the second protective resin layer 46 has a plurality of openings 468, a sixth end edge 461, and a sixth outer end edge 462. Further, the second protective resin layer 46 may be appropriately formed with an opening or a notch that exposes a first electrode collector portion 531 and a second electrode collector portion 532 described later.
  • the plurality of openings 468 are a form in which a part of the second protective resin layer 46 is deleted, and penetrate the second protective resin layer 46.
  • Three upper openings 468 in FIG. 157 are provided in order to make the speaker 705 function, for example.
  • the largest opening 468 in the center in the figure is provided to display the information displayed by the display unit 702 on the appearance.
  • the sixth edge 461 is an edge that defines the central opening 468 in the figure.
  • the sixth end edge 461 is an end edge surrounding the opening 468 from four directions, and has a rectangular ring shape in plan view.
  • the sixth end edge 461 is not limited to a shape surrounding the opening 468 from four directions.
  • the sixth edge 461 may be adjacent to the opening 468 from three directions so that the opening 468 opens outward from the second protective resin layer 46 in plan view.
  • the sixth end edge 461 may be provided in two or only one with respect to the opening 468.
  • the sixth outer edge 462 is located on the opposite side of the sixth edge 461 across at least a part of the photoelectric conversion layer 3 in plan view.
  • the sixth outer edge 462 of the second protective resin layer 46 is located. It is an outer peripheral edge.
  • the passivation layer 42 has a first edge 421 and a first outer edge 422.
  • the first end edge 421 coincides with the second end edge 451 in plan view. In the present embodiment, the first end edge 421 forms a surface continuous with the second end edge 451.
  • the first outer end edge 422 coincides with the second outer end edge 452 in plan view. In the present embodiment, the first outer end edge 422 forms a surface that is continuous with the second outer end edge 452.
  • the bypass conductive portion 5 is configured to collect a hole that has reached the first conductive layer 1 and an electron that has reached the second conductive layer 2 to form a path having at least a lower resistance than the first conductive layer 1.
  • the bypass conductive portion 5 includes a first bus bar portion 513, two second bus bar portions 514, a first electrode collector portion 531, a second electrode collector portion 532, a communication portion 52, a seventh edge 511, and It has a seventh outer edge 512.
  • the bypass conductive portion 5 is made of a material having a resistance lower than that of the first conductive layer 1 and contains, for example, Ag or carbon.
  • one second bus bar portion 514 covers the second end edge 451 and the first end edge 421 over the entire length.
  • the second bus bar portion 514 covers the first extending portion 104 located between the third end edge 101 and the first end edge 421 (second end edge 451) of the first conductive layer 1.
  • the seventh end edge 511 of the second bus bar portion 514 coincides with the third end edge 101 in plan view.
  • the other second bus bar portion 514 covers substantially the entire length excluding a part of the second outer end edge 452 and the first outer end edge 422.
  • the second bus bar portion 514 covers the second extending portion 103 of the first conductive layer 1.
  • the seventh outer end edge 512 of the bus bar portion 51 coincides with the third outer end edge 105 in plan view. With such a configuration, each of the two bus bar portions 51 is electrically connected to the first conductive layer 1.
  • the second electrode collector portion 532 is a portion that conducts to the second bus bar portion 514, and outputs holes collected by the first conductive layer 1 to, for example, a hole terminal provided in the electronic device B16. Part.
  • the second electrode collector 532 is formed on the first protective resin layer 45 of the protective resin layer 4.
  • the second electrode collector 532 overlaps the second conductive layer 2 and the photoelectric conversion layer 3 in plan view. In the thickness direction of the support substrate 41, the passivation layer 42 and the first protective resin layer 45 are interposed between the photoelectric conversion layer 3 and the second electrode collector 532.
  • the shape of the second collector 532 in plan view is not particularly limited, and in the illustrated example, it is substantially semi-elliptical. In the illustrated example, the second electrode collector 532 is directly connected to one second bus bar 514.
  • the connecting part 52 is a part formed on the first protective resin layer 45 and connects the bus bar part 51 on the inner side in the drawing in FIG. As a result, the holes collected in the two second bus bar portions 514 are guided to the second electrode collector portion 532.
  • the first bus bar portion 513 is separated from the second bus bar portion 514 and covers a part of the connection extension portion 132 of the connection portion 13. More specifically, the first bus bar portion 513 covers a part of the connection extension portion 132 in the left-right direction in FIG. 148 (longitudinal direction of the connection portion 13). As shown in FIG. 149, the seventh end edge 511 of the first bus bar portion 513 coincides with the connection portion end edge 131 of the connection portion 13 in plan view.
  • the second bus bar portion 514 is provided with a detour portion 5141.
  • the bypass portion 5141 is connected to portions of the second bus bar portion 514 located on both sides of the first bus bar portion 513, and is formed to bypass the first bus bar portion 513 and the first electrode collector portion 531 in a plan view. ing.
  • the first electrode collecting portion 531 is a portion that conducts to the first bus bar portion 513, and is a portion for outputting electrons collected by the second conductive layer 2 to, for example, an electronic terminal provided in the electronic device B16. is there.
  • the first electrode collector 531 is formed on the first protective resin layer 45 of the protective resin layer 4.
  • the first electrode collector 531 overlaps the second conductive layer 2 and the photoelectric conversion layer 3 in plan view. In the thickness direction of the support substrate 41, the passivation layer 42 and the first protective resin layer 45 are interposed between the photoelectric conversion layer 3 and the first electrode collector 531.
  • the shape of the first collector portion 531 in plan view is not particularly limited, and in the illustrated example, it is substantially semi-elliptical. In the illustrated example, the first electrode collector 531 is directly connected to the first bus bar 513.
  • the design display part 35 (design display through part 350) is located on the opposite side of the connection part edge 131 with respect to the conduction through part 351 in plan view. ing.
  • the conduction through portion 351 is located between the connection portion edge 131 and the design display portion 35 in a plan view.
  • a part is exposed as an exposed region 411.
  • the exposed region 411 is not covered with the first conductive layer 1 or the like, and the surface of the support substrate 41 is directly exposed.
  • FIGS. 149 and 150 are shown upside down.
  • FIGS. 158 to 168 show a process of generating a cross-sectional structure taken along the line CXLIX-CXLIX shown in FIG.
  • a support substrate 41 is prepared. Then, the first conductive film 10 made of ITO is laminated on one side of the support substrate 41 by a general method such as sputtering.
  • patterning is performed on the ITO to form patterns such as openings 18, display openings 181, slits 193, and slits 17 and the like.
  • a patterning method to ITO for example, a method using wet etching and a method using laser patterning such as Green laser light are appropriately employed.
  • an organic film 3A is formed.
  • the organic film 3A is formed by, for example, forming an organic film on the support substrate 41 and the first conductive film 10 by spin coating.
  • the photoelectric conversion layer 3 is formed by patterning the organic film 3A.
  • patterning of the organic film 3A for example, oxygen plasma etching or laser patterning is used, so that the fifth inner retracting edge 301, the fifth outer retracting edge 302, the opening 38, the design display through portion 350 (design display portion) 35), by finishing to a configuration having a through-hole 351 for conduction.
  • the photoelectric conversion layer 3 is not limited to the above, and an organic film is directly patterned on the support substrate 41 and the first conductive film 10 by a technique such as a slit coating method, a capillary coating method, or gravure printing. It may be formed by.
  • the conduction through portion 351 is a circular through hole having a relatively small diameter.
  • patterning using the laser beam Lz0 is suitable.
  • the laser beam Lz0 it is preferable to select a laser beam having a wavelength that leaves the first conductive film 10 while removing the organic film 3A. For example, a green laser beam is selected.
  • the second conductive layer 2 is formed.
  • the second conductive layer 2 is formed, for example, by forming a metal film on the support substrate 41, the first conductive film 10 and the photoelectric conversion layer 3 using the above-described metal by vacuum heating vapor deposition.
  • the metal film is patterned by etching using, for example, a mask layer.
  • the second conductive layer 2 having the fourth inner withdrawal edge 201 and the fourth outer withdrawal edge 202 is formed on the photoelectric conversion layer 3.
  • the conduction through portion 351 of the photoelectric conversion layer 3 is filled with the second conductive layer 2.
  • the first conductive layer 1 and the second conductive layer 2 are conducted through the conduction through portion 351.
  • an insulating film 420 is formed.
  • the insulating film 420 is formed by forming a film such as SiN or SiON on the support substrate 41, the first conductive layer 1, the photoelectric conversion layer 3, and the second conductive layer 2 by, for example, plasma CVD.
  • a first protective resin layer 45 is formed.
  • the first protective resin layer 45 is formed, for example, by applying a liquid resin material containing an ultraviolet curable resin on the insulating film 420 by screen printing and irradiating it with ultraviolet rays. As a result, the first protective resin layer 45 having the second end edge 451 and the second outer end edge 452 is obtained.
  • patterning is performed on the insulating film 420 using the first protective resin layer 45 as a mask.
  • This patterning is performed, for example, by wet etching using hydrofluoric acid containing 0.55% to 4.5% hydrogen fluoride.
  • hydrofluoric acid hardly dissolves the first protective resin layer 45 made of an ultraviolet curable resin, but selectively dissolves the insulating film 420 made of SiN or the like.
  • hydrofluoric acid hardly dissolves the first conductive film 10 made of ITO or the like.
  • a passivation layer 42 having a first edge 421 and a first outer edge 422 is formed.
  • the first edge 421 coincides with the second edge 451 in plan view.
  • the first edge 421 and the second edge 451 form a continuous surface.
  • the first outer end edge 422 coincides with the second outer end edge 452 in plan view.
  • the first outer end edge 422 and the second outer end edge 452 form a continuous surface.
  • the bypass conductive portion 5 is formed by, for example, applying a paste containing Ag or carbon and then curing the paste by a technique such as drying.
  • the first conductive film 10 is patterned. This patterning is performed, for example, using aqua regia in which concentrated hydrochloric acid and concentrated nitric acid are mixed at a ratio of 3: 1. By this patterning, portions of the first conductive film 10 exposed from the bypass conductive portion 5 and the first protective resin layer 45 are selectively removed. As a result, the first conductive layer 1 having the third edge 101 and the like is formed.
  • the second protective resin layer 46 is formed.
  • the second protective resin layer 46 is formed by, for example, applying a liquid resin material containing an ultraviolet curable resin on the insulating film 420 by screen printing and curing it by irradiating with ultraviolet rays. Thereby, the 2nd protective resin layer 46 which has the 6th edge 461 and the 6th outside edge 462 is obtained, and protective resin layer 4 is formed. Through the above steps, an organic thin film solar cell module A16 is obtained.
  • the conductive through-hole 351 is provided at a position near the fifth outer retreat edge 302 of the photoelectric conversion layer 3 along the third outer end edge 105. It has been. For this reason, the non-power generation region 30 that includes the conduction through portion 351 and overlaps the connection portion 13 is a relatively small area close to the third outer end edge 105, for example, a region that is smaller than the design display portion 35. It is. Therefore, the area ratio of the power generation region 31 that contributes to power generation in the photoelectric conversion layer 3 can be increased.
  • the through-hole for conduction 351 is a through-hole having a circular shape in plan view, and its diameter is, for example, about 40 ⁇ m.
  • the first electrode collector 531 and the second electrode collector 532 are provided at positions overlapping the second conductive layer 2 and the photoelectric conversion layer 3 in plan view. For this reason, the first electrode collector 531 and the second electrode collector 532 do not extend outward from the third outer edge 105 in plan view. This is suitable for reducing the ground contact area of the organic thin film solar cell module A16.
  • the design display portion 35 is often provided at a conspicuous position in appearance, and is generally separated from the end portion such as the third outer end edge 105. In such a case, being able to omit the lines appearing in the above-described appearance is preferable for finishing the appearance of the organic thin-film solar cell module A16 and the electronic device B16 more beautifully.
  • bypass conductive portion 5 By providing the bypass conductive portion 5, holes diffused in the first conductive layer 1 can be guided to the second electrode collector portion 532 via the second bus bar portion 514.
  • the bypass conductive portion 5 is made of a material having a resistance lower than that of the first conductive layer 1. For this reason, the bypass conductive portion 5 forms a lower resistance conduction path. By guiding the power generated by the photoelectric conversion layer 3 to such a conduction path, loss due to energization can be suppressed. Further, the bypass conductive portion 5 is covered with the protective resin layer 4. For this reason, it can avoid that the protective resin layer 4 deteriorates by reaction with external air etc. Therefore, it is possible to suppress energization loss while avoiding deterioration of energized portions of the organic thin-film solar cell module A16 and the electronic device B16.
  • the seventh end edge 511 and the seventh outer end edge 512 are located inside the sixth end edge 461 and the sixth outer end edge 462. That is, the bypass conductive portion 5 is completely covered with the protective resin layer 4. This is preferable for protecting the bypass conductive portion 5.
  • the support substrate 41 is exposed in a region adjacent to the second edge 451 and the second outer edge 452. In this portion, the passivation layer 42 and the first protective resin layer 45 are not formed. Therefore, it is possible to finish this portion more transparent, and the display portion 702 can be expressed more clearly.
  • the first conductive layer 1 is not formed on the support substrate 41 except for a small area covered by the second bus bar portion 514 in areas adjacent to the second edge 451 and the first edge 421.
  • the first conductive layer 1 is made of ITO, the first conductive layer 1 is visually recognized as being slightly colored depending on how light hits. In the present embodiment, it is possible to finish the region for displaying the display unit 702 in an even more transparent manner, and a more beautiful appearance can be realized.
  • the fifth inward retracting edge 301 of the photoelectric conversion layer 3 and the fourth inward retracting edge 201 of the second conductive layer 2 are separated from the first end edge 421 and the second end edge 451, thereby The two conductive layers 2 and the photoelectric conversion layer 3 can be prevented from being unduly conducted with the bypass conductive portion 5. Further, since the passivation layer 42 is interposed between the fourth inner retracting edge 201 and the fifth inner retracting edge 301 and the first end edge 421 and the second end edge 451, the second conductive layer 2 and the photoelectric conversion layer 3 and the second bus bar portion 514 of the bypass conductive portion 5 can be prevented more reliably.
  • the passivation layer 42 having the same shape as the first protective resin layer 45 can be formed by patterning the insulating film 420 using the first protective resin layer 45 as a mask. That is, if the first protective resin layer 45 is formed using a material excellent in shape formation such as an ultraviolet curable resin, the passivation layer 42 made of a material not necessarily excellent in shape formation can be finished in a desired shape. Note that the first protective resin layer 45 may be removed after the passivation layer 42 is formed. However, when the first protective resin layer 45 is left, the effect of preventing moisture and particles from entering the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3, etc., and the organic thin film solar cell module The effect of improving the strength of A16 can be expected.
  • FIGS. 171 to 183 show a modified example and other embodiments of the present invention.
  • the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment, and description thereof will be omitted as appropriate.
  • FIG. 171 shows a modification of the organic thin film solar cell module A16.
  • the conduction through portion 351 has an elongated shape in plan view.
  • the longitudinal direction of the conduction through portion 351 is substantially parallel to the connection portion edge 131 and coincides with the longitudinal direction of the connection portion 13. Also by such a modification, the area ratio which contributes to electric power generation among the photoelectric converting layers 3 can be raised.
  • FIGS. 172 to 175 show an organic thin film solar cell module according to an eighteenth embodiment of the present invention.
  • the organic thin-film solar cell module A17 of this embodiment includes a first conductive layer 1, a second conductive layer 2, a photoelectric conversion layer 3, a support substrate 41, a passivation layer 42, a protective resin layer 4, and a bypass conductive portion 5.
  • the planar view shape of the organic thin film solar cell module A17 is not particularly limited, and the illustrated example is an example in the case of the same planar view shape as the organic thin film solar cell module A16 described above.
  • FIG. 172 is an essential part enlarged bottom view showing the organic thin film solar cell module A17.
  • FIG. 173 is an enlarged cross-sectional view of a main part taken along the line CLXXIII-CLXXIII of FIG.
  • FIG. 174 is an enlarged cross-sectional view of a main part taken along line CLXXIV-CLXXIV in FIG.
  • FIG. 175 is an enlarged plan view of a main part in which the first protective resin layer 45 and the bypass conductive portion 5 are omitted.
  • the first edge 421 and the first outer edge 422 of the passivation layer 42 of the present embodiment are concave and convex end faces as shown in FIGS. 173 and 174. Further, as a whole, the first edge 421 is inclined in a direction away from the third edge 101 in plan view as the distance from the support substrate 41 in the thickness direction of the support substrate 41 is increased. Further, the first outer end edge 422 as a whole is inclined in a direction away from the second extending portion 103 of the first conductive layer 1 as it is separated from the support substrate 41 in the thickness direction of the support substrate 41.
  • the first end edge 421 of the present embodiment has a non-linear shape spaced from the third end edge 101 in plan view.
  • the first end edge 421 has, for example, a shape in which a plurality of broken lines and curves are combined.
  • the first outer end edge 422 has a linear shape in plan view.
  • One second bus bar portion 514 of the bypass conductive portion 5 covers substantially the entire length except for a part of the first edge 421 of the passivation layer 42.
  • the second bus bar portion 514 covers the first extending portion 104 located between the third end edge 101 and the first end edge 421 in the first conductive layer 1. Further, the seventh end edge 511 of the second bus bar portion 514 is located on the side opposite to the first end edge 421 with respect to the third end edge 101 in plan view. Thereby, the second bus bar portion 514 is in direct contact with the support substrate 41.
  • the other second bus bar portion 514 covers the first outer end edge 422 of the passivation layer 42 over the entire length.
  • the second bus bar portion 514 covers the second extending portion 103 of the first conductive layer 1.
  • the seventh outer end edge 512 of the second bus bar portion 514 is located on the opposite side of the first outer end edge 422 with respect to the third outer end edge 105 in plan view. Thereby, the second bus bar portion 514 is in direct contact with the support substrate 41. With such a configuration, each of the two second bus bar portions 514 is electrically connected to the first conductive layer 1.
  • the first bus bar portion 513 covers the connection extension portion 132 of the connection portion 13 of the first conductive layer 1. Further, the seventh end edge 511 of the first bus bar portion 513 is located on the opposite side to the first end edge 421 with respect to the third end edge 101 in plan view. Thus, the first bus bar portion 513 is in direct contact with the support substrate 41.
  • the protective resin layer 4 of the present embodiment has only the first protective resin layer 45.
  • the first protective resin layer 45 covers the passivation layer 42 and the bypass conductive portion 5, and is made of, for example, an ultraviolet curable resin.
  • the 1st protective resin layer 45 may serve as the transparent joining layer for joining organic thin-film solar cell module A17 and the display part 702 mentioned above.
  • the second end edge 451 of the second end edge 451 is located on the opposite side of the first end edge 421 with respect to the seventh end edge 511 in plan view.
  • the second outer end edge 452 of the first protective resin layer 45 is located on the opposite side of the first outer end edge 422 with respect to the seventh outer end edge 512 in plan view.
  • the first protective resin layer 45 has a portion that directly contacts the support substrate 41. Further, the first protective resin layer 45 covers a portion of the surface 423 of the passivation layer 42 that is exposed from the bypass conductive portion 5.
  • FIGS. 173 and 174 are shown upside down.
  • the support substrate 41 shown in FIG. 158 is prepared.
  • the first conductive film 10 made of ITO is laminated on one side of the support substrate 41 by a general method such as sputtering.
  • the first conductive film 10 is patterned.
  • a slit 17, a slit 191, a slit 192, a slit 193, and the like are formed in the first conductive film 10.
  • the patterning of the first conductive film 10 is performed by laser patterning, for example.
  • the laser beam Lz1 used for this laser patterning is not particularly limited as long as the first conductive film 10 can be subjected to laser patterning. For example, IR laser beam can be used.
  • the one located on the second conductive layer 2 and the photoelectric conversion layer 3 side shown is the third edge 101.
  • a portion of the first conductive film 10 between the fifth inward retracting edge 301 and the slit 191 becomes the first extending portion 104.
  • the one located on the second conductive layer 2 and the photoelectric conversion layer 3 side shown is the third outer edge 105.
  • a portion of the first conductive film 10 between the slit 192 and the fifth outer retraction edge 302 of the photoelectric conversion layer 3 becomes the second extension portion 103.
  • a portion defined by the slit 17 and the slit 192 becomes the connection portion 13.
  • an organic film is formed on the first conductive film 10, and laser patterning using, for example, Green laser light is performed on the organic film, thereby forming the photoelectric conversion layer 3 shown in FIG. 177.
  • the second conductive layer 2 is formed, and as shown in FIG. 179, the insulating film 420 is formed.
  • the insulating film 420 is formed by forming a film such as SiN or SiON on the support substrate 41, the first conductive film 10, the photoelectric conversion layer 3, and the second conductive layer 2 by, for example, plasma CVD.
  • an insulating film 420 covering the first conductive film 10, the second conductive layer 2, and the photoelectric conversion layer 3 is formed.
  • forming the passivation layer 42 having the first edge 421 by partially removing the insulating film 420 and forming the first conductive layer 1 by partially removing the first conductive film 10 A step of exposing the support substrate 41 in a region adjacent to the edge 421 is performed.
  • the step of exposing the support substrate 41 is performed by irradiating the first conductive film 10 with laser light Lz2 through the insulating film 420, as shown in FIG.
  • a process of partially removing the insulating film 420 is included.
  • a hatched portion of a plurality of relatively dark discrete points in the first conductive film 10 represents a portion irradiated with the laser light Lz2.
  • a hatched portion of a plurality of relatively thin discrete points in the insulating film 420 represents a portion that is removed due to irradiation with the laser light Lz2. Note that the method is not limited to the method using the laser beam Lz2, and for example, a method using etching may be selected.
  • the laser beam Lz2 for example, an IR laser beam having a wavelength of about 1,064 nm is selected.
  • the portion of the first conductive film 10 irradiated with the laser light Lz2 exhibits a behavior that volatilizes instantaneously when significant energy is applied.
  • the wavelength of the laser beam Lz2 described above is selected such that the insulating film 420 is less likely to absorb than the first conductive film 10. For this reason, the insulating film 420 is not directly destroyed by the laser beam Lz2. However, the portion of the insulating film 420 that contacts the first conductive film 10 is supported by the support substrate 41 via the first conductive film 10. When the first conductive film 10 is volatilized by irradiation with the laser beam Lz2, a part of the insulating film 420 is not supported by the support substrate 41.
  • the insulating film 420 overlapping the portion of the first conductive film 10 irradiated with the laser light Lz2 is the first conductive film. Part of it is scattered by the pressure due to volatilization of 10.
  • the portion of the insulating film 420 adjacent to the portion of the first conductive film 10 irradiated with the laser light Lz2 is scattered due to the volatility of the first conductive film 10. did.
  • the portion of the insulating film 420 that is scattered due to the irradiation of the laser beam Lz2 is hatched with a plurality of relatively thin discrete points.
  • the scattered portion of the insulating film 420 exists on the second conductive layer 2 and photoelectric conversion layer 3 side beyond the slit 191 and the slit 192.
  • the edge located on the slit 191 side of the insulating film 420 becomes the first edge 421, and the edge located on the slit 192 side becomes the first outer edge 422.
  • the hatching part which consists of several discrete points adjacent to the slit 191 among the 1st electrically conductive films 10 is removed by irradiation of the laser beam Lz2.
  • the edge located in the photoelectric conversion layer 3 side in planar view with respect to the slit 191 in the first conductive film 10 becomes the third edge 101, and the first conductive film 10 is planar with respect to the slit 192.
  • the edge located on the photoelectric conversion layer 3 side when viewed is the third outer edge 105.
  • the hatching part which consists of a some discrete point adjacent to the slit 192 among the 1st electrically conductive films 10 is removed by irradiation of the laser beam Lz2.
  • a part of the insulating film 420 adjacent to the slit 191 and the slit 192 is scattered with the irradiation of the laser light Lz2, so that a part of the first conductive film 10 adjacent to the slit 191 and the slit 192 is passivation. Exposed from layer 42. This portion becomes the first extension portion 104 and the second extension portion 103.
  • the first edge 421 and the first outer edge 422 are obtained.
  • a passivation layer 42 is formed.
  • the first conductive layer 1 having portions extending from the first end edge 421 and the first outer end edge 422 is formed.
  • the connection part 13 partitioned by the slit 17 is formed.
  • a cleaning process using aqua regia may be performed for the purpose of removing the first conductive film 10 and the like remaining on the support substrate 41.
  • the bypass conductive portion 5 is formed.
  • the bypass conductive portion 5 is formed so as to cover a portion of the first conductive layer 1 extending from the passivation layer 42 and the first edge 421 and the first outer edge 422 of the passivation layer 42.
  • the bypass conductive portion 5 is preferably formed so as to directly touch the support substrate 41. Thereby, the bypass conductive part 5 having the bus bar part 51 and the connecting part 52 is obtained.
  • the first protective resin layer 45 (protective resin layer 4) is formed so as to cover the bypass conductive portion 5 and the passivation layer 42.
  • the first protective resin layer 45 is formed by, for example, applying a liquid resin material containing an ultraviolet curable resin on the passivation layer 42 by screen printing and irradiating it with ultraviolet rays.
  • the area ratio of the power generation region 31 of the photoelectric conversion layer 3 can be increased.
  • the second bus bar portion 514 of the bypass conductive portion 5 covers the first extension portion 104 and the second extension portion 103 of the first conductive layer 1.
  • the first bus bar portion 513 covers the connection extension portion 132 of the first conductive layer 1.
  • the conduction area between the first conductive layer 1 and the bypass conductive portion 5 can be increased, which is preferable for reducing the resistance. Since the first end edge 421 and the first outer end edge 422 are concave and convex, the first end edge 421 and the first outer end edge 422 and the first bus bar portion 513 and the second bus bar of the bypass conductive portion 5 are provided. The bonding strength with the portion 514 can be increased.
  • the passivation layer 42 is removed by utilizing volatilization of the first conductive layer 1 generated by irradiating the first conductive layer 1 with the laser light Lz2. Therefore, there is no need for a dedicated laser beam or drug for removing the passivation layer 42. This is preferable for reducing manufacturing costs and manufacturing time.
  • IR laser light as the laser light Lz2
  • IR laser light as the laser light Lz2
  • SiN which is an example of the material of the insulating film 420, transmits light having a wavelength longer than 400 nm. For this reason, when the insulating film 420 is made of SiN, Green laser light having a wavelength of 532 nm may be used as the laser light Lz2. On the other hand, when UV laser light having a wavelength of 355 nm is used as the laser light Lz2, the insulating film 420 and the first conductive film 10 absorb the laser light Lz2, and therefore these can be removed at once. it can.
  • the partial removal of the insulating film 420 and the first conductive film 10 is performed using a laser beam Lz2.
  • the laser light Lz2 can control the irradiation region more accurately. Therefore, the insulating film 420 and the first conductive film 10 are suitable for removing a desired portion.
  • the partial removal of the insulating film 420 utilizes a behavior in which the insulating film 420 adjacent to the first conductive film 10 irradiated with the laser light Lz2 is destroyed. As a result, the portion of the insulating film 420 covering the portion of the first conductive layer 1 exposed from the passivation layer 42 in FIG. 181 is removed even though the laser beam Lz2 is not irradiated. . For this reason, the insulating film 420 can be appropriately removed while avoiding unduly destroying the portion of the first conductive layer 1 exposed from the passivation layer 42.
  • the slit 191 and the slit 192 in the first conductive film 10 it is possible to prevent the region of the insulating film 420 affected by the volatilization of the first conductive film 10 from being unduly wide. . Further, by providing the slit 191 and the slit 192, in the step of partially removing the first conductive film 10 shown in FIGS. 180 and 181, a part of the first conductive film 10 is formed in the region to be removed. Even if this remains, it can be avoided that the remaining portion and the first conductive layer 1 are unintentionally conducted.
  • the part located in the other side of the photoelectric converting layer 3 across the slit 192 among the 1st electrically conductive films 10 may remain
  • This portion is prevented from conducting to the first conductive layer 1 by providing the slit 192. Further, if the removal of this portion is omitted, the manufacturing time can be shortened.
  • the structure which provides the slit 191 and the slit 192 is a suitable example, and the structure which does not provide these may be sufficient.
  • FIG. 183 shows an organic thin-film solar cell module according to the eighteenth embodiment of the present invention.
  • the organic thin film solar cell module A ⁇ b> 18 of this embodiment both ends 171 of the slit 17 reach the third end edge 101 of the first conductive layer 1. That is, the connecting portion 13 is provided at a position facing the display opening 181. In other words, the connection portion 13 is disposed between the display opening 181 and the design display portion 35 in plan view.
  • a bypass portion 5141 is provided in the second bus bar portion 514 facing the display opening 181. Further, the bypass conductive portion 5 of the present embodiment has a connecting portion 521.
  • the communication part 521 connects the first bus bar part 513 and the first electrode collecting part 531.
  • the first electrode collecting portion 531 is disposed at a position separated from the first bus bar portion 513.
  • the second electrode collector 532 is disposed such that the distance from the display opening 181 is the same as that of the first electrode collector 531.
  • the area ratio of the power generation region 31 of the photoelectric conversion layer 3 can be increased.
  • the connection portion 13 is provided at a position facing the display opening 181
  • the first electrode collecting portion 531 is disposed at a position overlapping the second conductive layer 2 and the photoelectric conversion layer 3 in plan view. . For this reason, the first electrode collector 531 does not extend to the display opening 181, and a situation in which the display of the display unit 702 is hindered can be avoided.
  • the organic thin film solar cell module and the electronic device according to the present invention are not limited to the above-described embodiments.
  • the specific configurations of the organic thin-film solar cell module and the electronic device according to the present invention can be variously changed in design.
  • the electronic device according to the present invention can be applied to various electronic devices that can use solar power generation, such as a portable telephone terminal, and examples thereof include a wrist watch and an electronic calculator.
  • [Appendix 1E] A transparent support substrate; A transparent first conductive layer laminated on the support substrate; A second conductive layer; A photoelectric conversion layer comprising an organic thin film sandwiched between the first conductive layer and the second conductive layer; A passivation layer covering the second conductive layer; With The first conductive layer includes an extension portion extending from the passivation layer in a plan view, a slit having both ends reaching the edge of the extension portion, and a section defined by the slit and connected to the both ends of the slit.
  • connection part having a connection part edge
  • the photoelectric conversion layer has a conduction through portion that is included in the connection portion of the first conductive layer in a plan view and penetrates in the thickness direction, The second conductive layer and the connection portion of the first conductive layer are conducted through the conduction through portion of the photoelectric conversion layer,
  • a bypass conductive portion having a first bus bar portion covering at least a part of the connection extension portion extending from the passivation layer among the connection portions, and a first electrode collector portion conducting to the first bus bar portion;
  • Organic thin-film solar cell module [Appendix 2E] The organic thin-film solar cell module according to Supplementary Note 1E, wherein the through-hole for conduction is circular in plan view.
  • the bypass conductive portion includes a second bus bar portion that covers at least a part of the extension portion of the first conductive layer, and a second electrode collector portion that conducts to the second bus bar portion.
  • the organic thin-film solar cell module in any one.
  • the second electrode collector portion overlaps the second conductive layer and the photoelectric conversion layer in plan view, The organic thin-film solar cell module according to appendix 5E, wherein the passivation layer is interposed between the second electrode collector and the second conductive layer in a thickness direction of the support substrate.
  • the second bus bar portion has a bypass portion having both ends connected to a portion of the extension portion of the first conductive layer sandwiching the connection portion and bypassing the first electrode collector portion in a plan view.
  • the photoelectric conversion layer has a design display penetrating portion that constitutes a design display portion that penetrates in the thickness direction and appears on the appearance.
  • the first conductive layer includes a display opening for forming a display area, a third edge that defines the display opening, and a first extending portion that extends from the passivation layer to the display opening side. And having The said connection part is an organic thin-film solar cell module in any one of Additional remarks 1E thru
  • the first conductive layer includes a display opening for forming a display area, a third edge that defines the display opening, and a third outer edge located on the side opposite to the third edge.
  • connection part is an organic thin-film solar cell module in any one of additional remarks 1E thru
  • the passivation layer has a first edge facing the display opening in plan view
  • the protective resin layer includes a first protective resin layer that covers the passivation layer, and a second protective resin layer that is laminated on the first protective resin layer and covers the bypass conductive portion
  • the organic thin-film solar cell module according to appendix 11E wherein the first protective resin layer has a second end edge that coincides with the first end edge in plan view.
  • the organic thin-film solar cell module according to appendix 12E wherein the first edge and the second edge form a continuous surface.
  • the bypass conductive part is an organic thin-film solar cell module according to appendix 13E, having a seventh edge that coincides with the third edge in plan view.
  • the second protective resin layer has a sixth edge located on a side opposite to the first edge with respect to the third edge and the seventh edge in a plan view, and is in contact with the support substrate.
  • [Appendix 17E] The organic thin-film solar cell module according to appendix 16E, wherein the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
  • [Appendix 18E] The organic thin-film solar cell module according to appendix 17E, wherein the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
  • the passivation layer has a first edge facing the display opening in plan view
  • the bypass conductive part is the organic thin-film solar cell module according to appendix 11E, having a seventh edge located on a side opposite to the first edge with respect to the third edge in plan view.
  • the said protective resin layer has 2nd edge located in the opposite side to said 1st edge with respect to said 7th edge in planar view, and touches the said support substrate of addition 19E.
  • Organic thin-film solar cell module [Appendix 21E] The organic thin-film solar cell module according to appendix 20E, wherein the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
  • Appendix 22E The organic thin-film solar cell module according to appendix 21E, wherein the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
  • “transparent” is defined as having a transmittance of about 50% or more. “Transparent” is also used to mean colorless and transparent to visible light. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.
  • FIGS. 184 to 188 show an electronic device based on the nineteenth embodiment of the present invention and an organic thin film solar cell module based on the nineteenth and twentieth embodiments of the present invention.
  • the electronic device B19 of this embodiment includes an organic thin film solar cell module A19, an organic thin film solar cell module A20, a case 61, a control unit 701, a display unit 702, an input unit 703, a microphone 704, a speaker 705, a wireless communication unit 706, and a battery. 707 is configured as a portable telephone terminal.
  • the case 61 accommodates other components of the electronic device B19 and is made of a material such as metal, resin, or glass.
  • FIG. 184 is a plan view showing organic thin-film solar cell modules A19, A20 and an electronic device B19 using them.
  • FIG. 185 is a bottom view showing organic thin-film solar cell modules A19, A20 and electronic device B19.
  • FIG. 186 is a schematic sectional view taken along the line CLXXXVI-CLXXXVI of FIG. 184.
  • FIG. 187 is an enlarged cross-sectional view of a main part taken along line CLXXXVII-CLXXXVII in FIG. 184.
  • FIG. 188 is a system configuration diagram showing the electronic apparatus B19. In FIG. 186, only the case 61, the organic thin film solar cell module A19, the organic thin film solar cell module A20, the control unit 701, the display unit 702, and the battery 707 are schematically shown for the sake of understanding.
  • Organic thin film solar cell module A19 and organic thin film solar cell module A20 are power supply modules in electronic device B19, and convert light such as sunlight into electric power. A specific configuration will be described later.
  • the control unit 701 corresponds to an example of a drive unit referred to in the present invention, and is driven by power feeding from the organic thin film solar cell module A19 and the organic thin film solar cell module A20.
  • the control unit 701 may be directly supplied with power from the organic thin film solar cell module A19 and the organic thin film solar cell module A20, or the power from the organic thin film solar cell module A19 and the organic thin film solar cell module A20 is temporarily supplied to the battery 707. After being charged, the battery 707 may be driven by power feeding.
  • the control unit 701 includes, for example, a CPU, a memory, an interface, and the like.
  • the display unit 702 is for displaying various types of information on the external appearance of the electronic device B19.
  • the display unit 702 is, for example, a liquid crystal display panel or an organic EL display panel.
  • the display unit 702 displays information on the exterior through the organic thin film solar cell module A19.
  • the input unit 703 is for outputting a user operation as an electrical signal to the control unit 701.
  • the input unit 703 is a touch panel laminated on the display unit 702, for example. Note that the display unit 702 and the input unit 703 may be configured integrally.
  • the microphone 704 is a device that converts a user's voice into an electrical signal.
  • the speaker 705 is a device that outputs the voice of the other party and various notification sounds.
  • the wireless communication unit 706 is a device that performs bidirectional wireless communication conforming to the wireless communication standard.
  • the battery 707 is a device that stores electric power for driving the electronic device B19.
  • the battery 707 is configured to be appropriately charged / discharged.
  • the battery 707 is charged by feeding from commercial power using an adapter (not shown) or feeding from the organic thin film solar cell module A19 and the organic thin film solar cell module A20.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

This organic thin film solar cell module A1 is provided with a transparent supporting substrate 41, a transparent first conductive layer 1 that is laminated on the supporting substrate 41, a second conductive layer 2, and a photoelectric conversion layer 3 that is formed of an organic thin film and is sandwiched between the first conductive layer 1 and the second conductive layer 2. The second conductive layer 2 is thicker than the photoelectric conversion layer 3. Breakage is able to be suppressed due to this configuration.

Description

有機薄膜太陽電池モジュール、電子機器および有機薄膜太陽電池モジュールの製造方法Organic thin film solar cell module, electronic device, and manufacturing method of organic thin film solar cell module
　本発明は、有機薄膜太陽電池モジュール、電子機器および有機薄膜太陽電池モジュールの製造方法に関する。 The present invention relates to an organic thin film solar cell module, an electronic device, and a method for manufacturing an organic thin film solar cell module.
　太陽電池は、太陽光をはじめとする光を電力に変換する光電変換機能を備えており、いわゆる再生可能エネルギーを利用した発電手段として開発が進められている。有機薄膜太陽電池は、太陽電池の一種である。特許文献１には、有機薄膜からなる光電変換層と、この光電変換層を挟む第１導電層および第２導電層を備える構成が開示されている。第１導電層は、たとえばＩＴＯなどの透明導電層とされている。 Solar cells have a photoelectric conversion function that converts sunlight and other light into electric power, and are being developed as power generation means using so-called renewable energy. Organic thin-film solar cells are a type of solar cell. Patent Document 1 discloses a configuration including a photoelectric conversion layer made of an organic thin film, and a first conductive layer and a second conductive layer sandwiching the photoelectric conversion layer. The first conductive layer is a transparent conductive layer such as ITO.
　有機薄膜太陽電池モジュールにおいては、光電変換層の形成時に突起が生じたり、光電変換層上に粒子が付着する場合がある。これによって、第２導電層の形状がいびつとなる虞があり、外気が進入する等の問題が生じうる。 In the organic thin-film solar cell module, protrusions may be generated during the formation of the photoelectric conversion layer, or particles may adhere to the photoelectric conversion layer. As a result, the shape of the second conductive layer may become distorted, and problems such as the entry of outside air may occur.
　また、太陽電池は、太陽光をはじめとする光を電力に変換する光電変換機能を備えており、いわゆる再生可能エネルギーを利用した発電手段として開発が進められている。有機薄膜太陽電池は、太陽電池の一種である。特許文献１には、有機薄膜からなる光電変換層と、この光電変換層を挟む第１導電層および第２導電層を備える構成が開示されている。第１導電層は、たとえばＩＴＯなどの透明導電層とされている。同文献の図３４～図３６には、開口を有する有機薄膜太陽電池が開示されている。この開口は、液晶ディスプレイなどの表示部を外観に表すために設けられている。このため、光電変換層および第２電極層に、同形状および同サイズの開口が設けられている。 Moreover, the solar cell has a photoelectric conversion function for converting light such as sunlight into electric power, and is being developed as a power generation means using so-called renewable energy. Organic thin-film solar cells are a type of solar cell. Patent Document 1 discloses a configuration including a photoelectric conversion layer made of an organic thin film, and a first conductive layer and a second conductive layer sandwiching the photoelectric conversion layer. The first conductive layer is a transparent conductive layer such as ITO. 34 to 36 of this document disclose an organic thin film solar cell having an opening. This opening is provided in order to express a display unit such as a liquid crystal display. For this reason, openings of the same shape and size are provided in the photoelectric conversion layer and the second electrode layer.
　上述した表示部などの他に、電子機器においては、製造メーカー、製品名、使用に際して表示されることが望ましい文字や図柄、などの意匠を付することが求められる。この実現ためには、意匠が施された意匠板を有機薄膜太陽電池モジュールに積層させたり、有機薄膜太陽電池モジュールに印刷を施すなど、追加の部材や素材が必要となってしまう。 In addition to the display unit described above, electronic devices are required to have a design such as a manufacturer, a product name, and characters and designs that are desirably displayed upon use. In order to realize this, additional members and materials are required, such as laminating a design plate with a design on the organic thin film solar cell module or printing on the organic thin film solar cell module.
　また、太陽電池は、太陽光をはじめとする光を電力に変換する光電変換機能を備えており、いわゆる再生可能エネルギーを利用した発電手段として開発が進められている。有機薄膜太陽電池は、太陽電池の一種である。特許文献１には、有機薄膜からなる光電変換層と、この光電変換層を挟む第１導電層および第２導電層を備える構成が開示されている。第１導電層は、たとえばＩＴＯなどの透明導電層とされている。また、同文献においては、第１導電層、第２導電層および光電変換層を保護するパッシベーション膜が設けられている。同文献の図３４～図３６には、開口を有する有機薄膜太陽電池が開示されている。この開口は、液晶ディスプレイなどの表示部を外観に表すために設けられている。このため、光電変換層および第２電極層に、同形状および同サイズの開口が設けられている。 Moreover, the solar cell has a photoelectric conversion function for converting light such as sunlight into electric power, and is being developed as a power generation means using so-called renewable energy. Organic thin-film solar cells are a type of solar cell. Patent Document 1 discloses a configuration including a photoelectric conversion layer made of an organic thin film, and a first conductive layer and a second conductive layer sandwiching the photoelectric conversion layer. The first conductive layer is a transparent conductive layer such as ITO. In this document, a passivation film that protects the first conductive layer, the second conductive layer, and the photoelectric conversion layer is provided. 34 to 36 of this document disclose an organic thin film solar cell having an opening. This opening is provided in order to express a display unit such as a liquid crystal display. For this reason, openings of the same shape and size are provided in the photoelectric conversion layer and the second electrode layer.
　しかしながら、上述した開口は、第１導電層およびパッシベーション膜によって覆われている。第１導電層およびパッシベーション膜は、それぞれが果たすべき機能を具備させると、開口が透光性を有するものの、第１導電層やパッシベーション膜の色が開口に着色されるという問題があった。 However, the opening described above is covered with the first conductive layer and the passivation film. When the first conductive layer and the passivation film have functions to be performed, the opening has a light-transmitting property, but the first conductive layer and the passivation film are colored in the opening.
　また、太陽電池は、太陽光などの光を電力に変換する光電変換機能を備えており、いわゆる再生可能エネルギーを利用した発電手段として開発が進められている。特許文献１には、有機薄膜からなる光電変換層と、この光電変換層を挟む第１電極層および第２電極層を備えるといった有機薄膜太陽電池の基本構成が開示されている。 Also, solar cells have a photoelectric conversion function for converting light such as sunlight into electric power, and are being developed as power generation means using so-called renewable energy. Patent Document 1 discloses a basic configuration of an organic thin film solar cell including a photoelectric conversion layer formed of an organic thin film and a first electrode layer and a second electrode layer sandwiching the photoelectric conversion layer.
　ところで、電子機器は、その筐体の表面にメーカ名、製品名、文字、図柄等、外部から視認できる意匠を付すことが求められる。このような意匠は印刷や刻印、シール貼着等の手法によって筐体表面に付されるのが一般的であるが、筐体表面の多くの領域に有機薄膜太陽電池を配置する場合、このような有機薄膜太陽電池が占める筐体表面にも意匠を付すことができれば便利である。 By the way, an electronic device is required to have a design that can be visually recognized from the outside, such as a manufacturer name, a product name, characters, and a design, on the surface of the casing. Such a design is generally applied to the surface of the casing by a technique such as printing, stamping, sticking a sticker, etc., but when organic thin-film solar cells are arranged in many areas of the casing surface, It would be convenient if the design could also be applied to the housing surface occupied by a simple organic thin film solar cell.
　しかしながら、有機薄膜太陽電池の表面、すなわち、受光面に意匠を印刷したり、シールを貼着する等といった手法を採用したのでは、意匠を付すための部材が増え、外物との接触や摩擦によって意匠の品位が低下したり消失するといった不具合が懸念されるし、光電変換層が意匠に隠れて光電変換効率が実質的に減じられるので好ましくない。 However, when a design such as printing a design on the surface of an organic thin film solar cell, that is, a light-receiving surface, or sticking a seal is adopted, the number of members for attaching the design increases, contact with external objects, and friction Therefore, there is a concern that the quality of the design deteriorates or disappears, and the photoelectric conversion layer is hidden in the design and the photoelectric conversion efficiency is substantially reduced.
　また、上述した開口は、第１導電層およびパッシベーション層によって覆われている。第１導電層およびパッシベーション層は、それぞれが果たすべき機能を具備させると、開口が透光性を有するものの、第１導電層やパッシベーション層の色が開口に着色されるという問題があった。 Further, the above-described opening is covered with the first conductive layer and the passivation layer. If each of the first conductive layer and the passivation layer has a function to be performed, the opening has translucency, but the first conductive layer and the passivation layer are colored in the opening.
　また、有機薄膜太陽電池モジュールにおいては、光電変換層のうち実際に発電に寄与する部分の割合を高めることが求められる。 Also, in the organic thin film solar cell module, it is required to increase the proportion of the photoelectric conversion layer that actually contributes to power generation.
　また、光電変換機能によって得られた電力が通電する際、第２導電層よりも第１導電層において、より大きな損失が生じる。このような損失は、有機薄膜太陽電池モジュール全体としての発電効率を低下させるものであり、好ましくない。 Further, when the electric power obtained by the photoelectric conversion function is energized, a larger loss occurs in the first conductive layer than in the second conductive layer. Such a loss is not preferable because it reduces the power generation efficiency of the organic thin-film solar cell module as a whole.
　また、有機薄膜太陽電池モジュールにおいては、光電変換層のうち実際に発電に寄与する部分の割合の低減を抑制することが求められる。 Moreover, in the organic thin film solar cell module, it is required to suppress a reduction in the proportion of the photoelectric conversion layer that actually contributes to power generation.
特開２０１４－１９２１９６号公報JP 2014-192196 A
　本発明は、上記した事情のもとで考え出されたものであって、破損を抑制することが可能な有機薄膜太陽電池モジュール、電子機器および有機薄膜太陽電池モジュールの製造方法を提供することをその課題とする。また、追加の部材等を要することなく意匠を外観に表すことが可能な有機薄膜太陽電池モジュールおよび電子機器を提供することをその課題とする。また、より透明な表面を有する有機薄膜太陽電池モジュール、電子機器、有機薄膜太陽電池モジュールの製造方法を提供することをその課題とする。また、追加の部材等を要することなく、意匠を外観に表すことが可能な有機薄膜太陽電池を提供することをその課題とする。また、より透明な表面を有する有機薄膜太陽電池モジュール、電子機器、有機薄膜太陽電池モジュールの製造方法を提供することをその課題とする。また、光電変換層のうち実際に発電に寄与する部分の割合を高めることが可能な有機薄膜太陽電池および電子機器を提供することをその課題とする。また、通電部分の劣化を回避しつつ通電損失を抑制することが可能な有機薄膜太陽電池モジュールおよび電子機器を提供することをその課題とする。また、光電変換層のうち実際に発電に寄与する部分の低減を抑制することが可能な有機薄膜太陽電池および電子機器を提供することをその課題とする。 The present invention has been conceived under the circumstances described above, and provides an organic thin film solar cell module, an electronic device, and a method of manufacturing an organic thin film solar cell module capable of suppressing damage. Let that be the issue. It is another object of the present invention to provide an organic thin-film solar cell module and an electronic device that can express a design in appearance without requiring additional members. It is another object of the present invention to provide a method for producing an organic thin film solar cell module, an electronic device, and an organic thin film solar cell module having a more transparent surface. It is another object of the present invention to provide an organic thin-film solar cell capable of expressing the design on the appearance without requiring additional members. It is another object of the present invention to provide a method for producing an organic thin film solar cell module, an electronic device, and an organic thin film solar cell module having a more transparent surface. It is another object of the present invention to provide an organic thin-film solar cell and an electronic device that can increase the proportion of the photoelectric conversion layer that actually contributes to power generation. It is another object of the present invention to provide an organic thin-film solar cell module and an electronic device that can suppress energization loss while avoiding deterioration of the energized portion. It is another object of the present invention to provide an organic thin film solar cell and an electronic device that can suppress a reduction in a portion that actually contributes to power generation in the photoelectric conversion layer.
本発明の第１の側面によって提供される有機薄膜太陽電池モジュールは、透明な支持基板と、前記支持基板に積層された透明な第１導電層と、第２導電層と、前記第１導電層および前記第２導電層に挟まれた有機薄膜からなる光電変換層と、を備え、前記第２導電層は、前記光電変換層よりも厚い。 An organic thin-film solar cell module provided by the first aspect of the present invention includes a transparent support substrate, a transparent first conductive layer laminated on the support substrate, a second conductive layer, and the first conductive layer. And a photoelectric conversion layer made of an organic thin film sandwiched between the second conductive layers, and the second conductive layer is thicker than the photoelectric conversion layer.
　本発明の好ましい実施の形態においては、前記第１導電層は、前記支持基板の一部が前記第１導電層から露出した基板露出領域を介して隣り合う２つの第１区画部を有しており、前記第２導電層は、前記基板露出領域の一部を挟んで隣り合う２つの第２区画部を有しており、前記光電変換層は、平面視において前記隣り合う２つのうち一方の前記第１区画部および前記隣り合う２つのうち他方の前記第２区画部の双方と重なる光電変換層接続部に、厚さ方向に貫通する光電変換層貫通部を有する。 In a preferred embodiment of the present invention, the first conductive layer has two first partition portions that are adjacent to each other through a substrate exposed region in which a part of the support substrate is exposed from the first conductive layer. And the second conductive layer has two second partition portions adjacent to each other with a part of the substrate exposed region in between, and the photoelectric conversion layer is one of the two adjacent ones in a plan view. The photoelectric conversion layer connecting portion that overlaps both the first partition portion and the other second partition portion of the two adjacent ones has a photoelectric conversion layer penetration portion that penetrates in the thickness direction.
　本発明の好ましい実施の形態においては、前記光電変換層は、平面視において前記光電変換層貫通部を囲む突起を有し、前記突起は、前記第２導電層に覆われている。 In a preferred embodiment of the present invention, the photoelectric conversion layer has a protrusion surrounding the photoelectric conversion layer penetrating portion in a plan view, and the protrusion is covered with the second conductive layer.
　本発明の好ましい実施の形態においては、前記隣り合う２つのうち一方の前記第１区画部は、平面視において前記光電変換層接続部と重ならず且つ前記第２導電層と重なる第１電極部を有し、前記隣り合う２つのうち一方の前記第２区画部は、平面視において前記第１電極部と一致する第２電極部を有し、前記光電変換層は、平面視において前記第１電極部および前記第２電極部と一致する光電変換層発電部を有する。 In a preferred embodiment of the present invention, one of the adjacent two first partition portions does not overlap with the photoelectric conversion layer connection portion in a plan view and overlaps with the second conductive layer. One of the two adjacent sections has a second electrode portion that coincides with the first electrode portion in plan view, and the photoelectric conversion layer has the first electrode in plan view. A photoelectric conversion layer power generation unit that coincides with the electrode unit and the second electrode unit is provided.
　本発明の好ましい実施の形態においては、前記隣り合う２つのうち一方の前記第１区画部は、平面視において前記光電変換層接続部と一致する第１接続部を有し、前記隣り合う２つのうち他方の前記第２区画部は、平面視において前記光電変換層接続部と一致する第２接続部を有する。 In a preferred embodiment of the present invention, one of the two adjacent ones has a first connection portion that coincides with the photoelectric conversion layer connection portion in plan view, and the two adjacent The other second partition portion has a second connection portion that coincides with the photoelectric conversion layer connection portion in plan view.
　本発明の好ましい実施の形態においては、前記光電変換層貫通部は、平面視円形状である。 In a preferred embodiment of the present invention, the photoelectric conversion layer penetrating portion has a circular shape in plan view.
　本発明の好ましい実施の形態においては、前記隣り合う２つのうち一方の前記第１区画部の前記第１接続部は、平面視において前記光電変換層貫通部に内包され且つ厚さ方向に貫通する第１貫通部を有する。 In a preferred embodiment of the present invention, the first connection part of the first partition part of one of the two adjacent parts is included in the photoelectric conversion layer penetrating part in a plan view and penetrates in the thickness direction. It has a 1st penetration part.
　本発明の好ましい実施の形態においては、前記第１貫通部の内端縁は、平面視において前記光電変換層貫通部の内端縁から離間している。 In a preferred embodiment of the present invention, the inner end edge of the first penetrating portion is separated from the inner end edge of the photoelectric conversion layer penetrating portion in plan view.
　本発明の好ましい実施の形態においては、前記隣り合う２つのうち一方の前記第１区画部の前記第１接続部は、平面視における前記光電変換層貫通部に内包される領域において前記支持基板を覆っている。 In preferable embodiment of this invention, the said 1st connection part of one said 1st division part of the said adjacent two is the said support substrate in the area | region enclosed by the said photoelectric converting layer penetration part in planar view. Covering.
　本発明の好ましい実施の形態においては、前記第１導電層は、ＩＴＯからなる。 In a preferred embodiment of the present invention, the first conductive layer is made of ITO.
　本発明の好ましい実施の形態においては、前記第２導電層は、金属からなる。 In a preferred embodiment of the present invention, the second conductive layer is made of metal.
　本発明の好ましい実施の形態においては、前記第２導電層は、Ａｌからなる。 In a preferred embodiment of the present invention, the second conductive layer is made of Al.
　本発明の好ましい実施の形態においては、前記第２導電層を覆うパッシベーション層を備える。 In a preferred embodiment of the present invention, a passivation layer covering the second conductive layer is provided.
　本発明の好ましい実施の形態においては、前記パッシベーション層は、ＳｉＮまたはＳｉＯＮからなる。 In a preferred embodiment of the present invention, the passivation layer is made of SiN or SiON.
　本発明の第２の側面によって提供される電子機器は、本発明の第１の側面によって提供される有機薄膜太陽電池モジュールと、前記有機薄膜太陽電池モジュールからの給電によって駆動する駆動部と、を備える。 An electronic device provided by the second aspect of the present invention includes an organic thin film solar cell module provided by the first aspect of the present invention, and a drive unit that is driven by power feeding from the organic thin film solar cell module. Prepare.
　本発明の第３の側面によって提供される有機薄膜太陽電池モジュールの製造方法は、透明な支持基板に透明な第１導電層を積層する工程と、前記第１導電層に有機薄膜からなる光電変換層を積層する工程と、前記光電変換層に第２導電層を積層する工程と、を備え、前記第２導電層を積層する工程においては、前記光電変換層よりも厚く前記第２導電層を積層する。 The method for producing an organic thin film solar cell module provided by the third aspect of the present invention includes a step of laminating a transparent first conductive layer on a transparent support substrate, and photoelectric conversion comprising an organic thin film on the first conductive layer. A step of laminating a layer, and a step of laminating a second conductive layer on the photoelectric conversion layer. In the step of laminating the second conductive layer, the second conductive layer is thicker than the photoelectric conversion layer. Laminate.
　本発明の好ましい実施の形態においては、前記第２導電層を積層する工程においては、蒸着法によって金属を積層させる。 In a preferred embodiment of the present invention, in the step of laminating the second conductive layer, a metal is laminated by a vapor deposition method.
　本発明の好ましい実施の形態においては、前記光電変換層を積層する工程においては、前記光電変換層を貫通する光電変換層貫通部を形成し、前記第２導電層を積層する工程においては、前記第２導電層によって前記光電変換層貫通部を覆う。 In preferable embodiment of this invention, in the process of laminating | stacking the said photoelectric converting layer, in the process of forming the photoelectric converting layer penetration part which penetrates the said photoelectric converting layer, and laminating | stacking the said 2nd conductive layer, The photoelectric conversion layer penetrating portion is covered with a second conductive layer.
　本発明の好ましい実施の形態においては、前記光電変換層を積層する工程においては、前記光電変換層貫通部とともに平面視において前記光電変換層貫通部に内包され且つ厚さ方向に貫通する第１貫通部を前記第１導電層に形成する。 In preferable embodiment of this invention, in the process of laminating | stacking the said photoelectric converting layer, it is included in the said photoelectric converting layer penetration part in planar view with the said photoelectric converting layer penetration part, and the 1st penetration penetrated in the thickness direction A portion is formed in the first conductive layer.
　本発明の好ましい実施の形態においては、前記光電変換層貫通部の形成は、ＩＲレーザによって行う。 In a preferred embodiment of the present invention, the photoelectric conversion layer penetrating portion is formed by an IR laser.
　本発明の好ましい実施の形態においては、前記第１導電層は、ＩＴＯからなる。 In a preferred embodiment of the present invention, the first conductive layer is made of ITO.
　本発明の好ましい実施の形態においては、前記第２導電層は、金属からなる。 In a preferred embodiment of the present invention, the second conductive layer is made of metal.
　本発明の好ましい実施の形態においては、前記第２導電層は、Ａｌからなる。 In a preferred embodiment of the present invention, the second conductive layer is made of Al.
　本発明の第４の側面によって提供される有機薄膜太陽電池モジュールは、透明な第１導電層と、第２導電層と、前記第１導電層および前記第２導電層に挟まれた有機薄膜からなる光電変換層と、を備え、前記光電変換層は、前記第１導電層を透して外観に表れる意匠を構成する１以上の意匠表示部を有する。 The organic thin film solar cell module provided by the fourth aspect of the present invention includes a transparent first conductive layer, a second conductive layer, and an organic thin film sandwiched between the first conductive layer and the second conductive layer. A photoelectric conversion layer, and the photoelectric conversion layer has one or more design display portions constituting a design that appears through the first conductive layer.
　本発明の好ましい実施の形態においては、前記第１導電層が積層された、透明な支持基板を備える。 In a preferred embodiment of the present invention, a transparent support substrate on which the first conductive layer is laminated is provided.
　本発明の好ましい実施の形態においては、前記第２導電層を覆うパッシベーション膜を備える。 In a preferred embodiment of the present invention, a passivation film that covers the second conductive layer is provided.
　本発明の好ましい実施の形態においては、前記パッシベーション膜は、前記意匠表示部を覆っている。 In a preferred embodiment of the present invention, the passivation film covers the design display portion.
　本発明の好ましい実施の形態においては、前記パッシベーション膜は、前記意匠表示部を覆う部分と前記光電変換層のうち前記意匠表示部に隣接する部位を覆う部分とが、平坦に形成されている。 In a preferred embodiment of the present invention, in the passivation film, a portion covering the design display portion and a portion covering the portion adjacent to the design display portion in the photoelectric conversion layer are formed flat.
　本発明の好ましい実施の形態においては、前記パッシベーション膜の厚さは、前記光電変換層の厚さよりも厚い。 In a preferred embodiment of the present invention, the passivation film is thicker than the photoelectric conversion layer.
　本発明の好ましい実施の形態においては、前記パッシベーション膜に積層された保護層を備える。 In a preferred embodiment of the present invention, a protective layer laminated on the passivation film is provided.
　本発明の好ましい実施の形態においては、前記パッシベーション膜と前記保護層とを接合する接合層を備える。 In a preferred embodiment of the present invention, a bonding layer for bonding the passivation film and the protective layer is provided.
　本発明の好ましい実施の形態においては、前記第１導電層は、ＩＴＯからなる。 In a preferred embodiment of the present invention, the first conductive layer is made of ITO.
　本発明の好ましい実施の形態においては、前記第２導電層は、金属からなる。 In a preferred embodiment of the present invention, the second conductive layer is made of metal.
　本発明の好ましい実施の形態においては、前記第２導電層は、Ａｌからなる。 In a preferred embodiment of the present invention, the second conductive layer is made of Al.
　本発明の好ましい実施の形態においては、前記意匠表示部は、前記光電変換層を厚さ方向に貫通する貫通部によって構成されている。 In a preferred embodiment of the present invention, the design display part is constituted by a penetrating part that penetrates the photoelectric conversion layer in the thickness direction.
　本発明の好ましい実施の形態においては、前記意匠表示部は、周囲よりも薄肉とされた薄肉部によって構成されている。 In a preferred embodiment of the present invention, the design display portion is constituted by a thin portion that is thinner than the surroundings.
　本発明の好ましい実施の形態においては、前記第１導電層は、第１電極部を有し、前記第２導電層は、平面視において前記第１電極部と一致する第２電極部を有し、前記光電変換層は、前記第１電極部および前記第２電極部に挟まれ、且つ光電変換機能を発揮することにより発電に寄与する発電領域を有する。 In a preferred embodiment of the present invention, the first conductive layer has a first electrode portion, and the second conductive layer has a second electrode portion that coincides with the first electrode portion in plan view. The photoelectric conversion layer has a power generation region that is sandwiched between the first electrode portion and the second electrode portion and contributes to power generation by exhibiting a photoelectric conversion function.
　本発明の好ましい実施の形態においては、前記光電変換層は、平面視において前記第１電極部および前記第２電極部とは重ならず、且つ発電に寄与しない非発電領域を有する。 In a preferred embodiment of the present invention, the photoelectric conversion layer has a non-power generation region that does not overlap the first electrode portion and the second electrode portion in a plan view and does not contribute to power generation.
　本発明の好ましい実施の形態においては、前記第１導電層は、平面視において前記意匠表示部を内包し、且つ厚さ方向に貫通するスリットによって囲まれた第１区画部を有する。 In a preferred embodiment of the present invention, the first conductive layer includes a first partition part that includes the design display part in a plan view and is surrounded by a slit penetrating in the thickness direction.
　本発明の好ましい実施の形態においては、前記光電変換層の前記非発電領域は、前記第１導電層の前記第１区画部に重なる領域である区画領域を有する。 In a preferred embodiment of the present invention, the non-power generation region of the photoelectric conversion layer has a partition region that is a region overlapping the first partition portion of the first conductive layer.
　本発明の好ましい実施の形態においては、前記光電変換層の前記区画領域に含まれる前記意匠表示部を通じて前記第１導電層と前記第２導電層とが接している。 In a preferred embodiment of the present invention, the first conductive layer and the second conductive layer are in contact with each other through the design display portion included in the partition region of the photoelectric conversion layer.
　本発明の好ましい実施の形態においては、前記第１導電層は、スリットを挟んで隣り合う２つの前記第１電極部を有し、前記第２導電層は、平面視において前記２つの第１電極部と一致する２つの前記第２電極部を有し、前記光電変換層は、前記２つの第１電極部および前記２つの第２電極部に挟まれた２つの前記発電領域を有する。 In a preferred embodiment of the present invention, the first conductive layer has two first electrode portions adjacent to each other with a slit interposed therebetween, and the second conductive layer has the two first electrodes in a plan view. The photoelectric conversion layer has two power generation regions sandwiched between the two first electrode portions and the two second electrode portions.
　本発明の好ましい実施の形態においては、前記２つの発電領域は、互いに直列に接続されている。 In a preferred embodiment of the present invention, the two power generation regions are connected in series with each other.
　本発明の好ましい実施の形態においては、前記２つの発電領域は、互いに並列に接続されている。 In a preferred embodiment of the present invention, the two power generation regions are connected in parallel to each other.
　本発明の好ましい実施の形態においては、前記第１導電層は、前記２つの第１電極部の一方に繋がり、且つ前記スリットを挟んで前記２つの第１電極部の他方に隣り合う第１連絡部を有し、前記第２導電層は、前記２つの第１電極部の他方と平面視において一致する前記第２電極部に繋がり、且つ前記スリットを挟んで前記２つの第２電極部のもう一方に隣り合うとともに、前記第１連絡部と接する第２連絡部を有し、前記光電変換層の前記非発電領域は、前記第１連絡部および前記第２連絡部に挟まれた連絡領域を含む。 In a preferred embodiment of the present invention, the first conductive layer is connected to one of the two first electrode portions and is adjacent to the other of the two first electrode portions with the slit interposed therebetween. And the second conductive layer is connected to the second electrode portion that coincides with the other of the two first electrode portions in a plan view, and is connected to the second electrode portion with the slit interposed therebetween. A non-power generation area of the photoelectric conversion layer includes a communication area sandwiched between the first communication section and the second communication section, the second communication section being adjacent to one side and in contact with the first communication section. Including.
　本発明の好ましい実施の形態においては、前記連絡領域は、前記意匠表示部を含んでおり、前記第１連絡部と前記第２連絡部とは、前記連絡領域に含まれた前記意匠表示部を通じて接している。 In a preferred embodiment of the present invention, the communication area includes the design display part, and the first communication part and the second communication part are passed through the design display part included in the communication area. It touches.
　本発明の好ましい実施の形態においては、前記第１導電層は、同心円状に配置された複数の前記第１電極部と前記第１連絡部とを有し、前記第２導電層は、同心円状に配置された複数の前記第２電極部と前記第２連絡部とを有し、前記光電変換層は、同心円状に配置された複数の前記発電領域と複数の前記連絡領域とを有する。 In a preferred embodiment of the present invention, the first conductive layer has a plurality of the first electrode portions and the first connecting portions arranged concentrically, and the second conductive layer has a concentric shape. The photoelectric conversion layer includes a plurality of power generation regions and a plurality of communication regions arranged concentrically.
　本発明の好ましい実施の形態においては、前記第１導電層は、前記第１電極部のいずれか１の第１電極部から、平面視において前記光電変換層の外方に延出する第１延出部を有している。 In a preferred embodiment of the present invention, the first conductive layer extends from the first electrode portion of any one of the first electrode portions to the outside of the photoelectric conversion layer in a plan view. Has a protruding part.
　本発明の好ましい実施の形態においては、前記第１導電層は、前記第１延出部に繋がる前記第１電極部と該第１電極部に隣り合う前記第１電極部とにスリットを介して挟まれた第１端部を有し、前記光電変換層は、平面視において前記第１端部に内包される前記意匠表示部を含み、且つ前記第１端部に重なる端部領域を有し、前記第２導電層は、平面視において第１端部に一致し、且つ隣接する第２電極部に繋がるとともに、前記端部領域の前記意匠表示部を通じて前記第１端部に接する第２端部を有する。 In a preferred embodiment of the present invention, the first conductive layer includes a slit formed between the first electrode portion connected to the first extension portion and the first electrode portion adjacent to the first electrode portion. The photoelectric conversion layer includes the design display portion included in the first end portion in a plan view and has an end region that overlaps the first end portion. The second conductive layer coincides with the first end portion in plan view and is connected to the adjacent second electrode portion, and is in contact with the first end portion through the design display portion in the end region. Part.
　本発明の好ましい実施の形態においては、前記第１導電層は、前記第１端部から、平面視において前記光電変換層の外方に延出する第２延出部を有している。 In a preferred embodiment of the present invention, the first conductive layer has a second extending portion that extends outward from the photoelectric conversion layer in a plan view from the first end portion.
　本発明の好ましい実施の形態においては、前記連絡領域に含まれる前記意匠表示部は、時刻を特定ための文字を表す。 In a preferred embodiment of the present invention, the design display part included in the contact area represents a character for specifying time.
　本発明の好ましい実施の形態においては、前記区画領域に含まれる前記意匠表示部は、時刻を特定ための文字を表す。 In a preferred embodiment of the present invention, the design display part included in the partition area represents a character for specifying time.
　本発明の好ましい実施の形態においては、前記第１導電層は、平面視において前記意匠表示部を内包する開口を有しており、前記光電変換層のうち前記第１導電層の前記開口に一致する部位が前記非発電領域とされている。 In a preferred embodiment of the present invention, the first conductive layer has an opening that encloses the design display portion in a plan view, and coincides with the opening of the first conductive layer in the photoelectric conversion layer. The part to perform is the non-power generation region.
　本発明の好ましい実施の形態においては、前記開口に内包される前記意匠表示部は、時刻を特定するための図形を表す。 In a preferred embodiment of the present invention, the design display part included in the opening represents a figure for specifying time.
　本発明の第５の側面によって提供される電子機器は、本発明の第４の側面によって提供される有機薄膜太陽電池モジュールと、前記有機薄膜太陽電池モジュールからの給電によって駆動する駆動部と、を備える。 An electronic device provided by the fifth aspect of the present invention includes an organic thin film solar cell module provided by the fourth aspect of the present invention, and a drive unit that is driven by power feeding from the organic thin film solar cell module. Prepare.
　本発明の好ましい実施の形態においては、前記駆動部によって駆動される長針および短針を備えており、時計として構成されている。 In a preferred embodiment of the present invention, a long hand and a short hand driven by the drive unit are provided and configured as a timepiece.
　本発明の好ましい実施の形態においては、前記駆動部は、演算機能を有しており、前記駆動部による演算結果を表示する表示部を備えており、電子計算機として構成されている。 In a preferred embodiment of the present invention, the drive unit has a calculation function, and includes a display unit that displays a calculation result by the drive unit, and is configured as an electronic computer.
　本発明の第６の側面によって提供される有機薄膜太陽電池モジュールは、透明な支持基板と、前記支持基板に積層された透明な第１導電層と、第２導電層と、前記第１導電層および前記第２導電層に挟まれた有機薄膜からなる光電変換層と、前記第２導電層を覆うパッシベーション膜と、を備え、前記パッシベーション膜は、第１端縁を有し、前記第１端縁に隣接する領域において、前記支持基板が露出している。 An organic thin film solar cell module provided by the sixth aspect of the present invention includes a transparent support substrate, a transparent first conductive layer laminated on the support substrate, a second conductive layer, and the first conductive layer. And a photoelectric conversion layer comprising an organic thin film sandwiched between the second conductive layers, and a passivation film covering the second conductive layer, the passivation film having a first edge, and the first end The support substrate is exposed in a region adjacent to the edge.
　本発明の好ましい実施の形態においては、前記第１導電層は、平面視において前記第１端縁と一致する第３端縁を有する。 In a preferred embodiment of the present invention, the first conductive layer has a third edge that coincides with the first edge in plan view.
　本発明の好ましい実施の形態においては、前記第１導電層は、平面視において前記第１端縁よりも内方に退避した第３内方退避端縁を有する。 In a preferred embodiment of the present invention, the first conductive layer has a third inward retraction edge that retreats inward from the first end edge in plan view.
　本発明の好ましい実施の形態においては、前記第２導電層は、平面視において前記第１端縁よりも内方に退避した第４内方退避端縁を有する。 In a preferred embodiment of the present invention, the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
　本発明の好ましい実施の形態においては、前記光電変換層は、平面視において前記第１端縁よりも内方に退避した第５内方退避端縁を有する。 In a preferred embodiment of the present invention, the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
　本発明の好ましい実施の形態においては、前記第４内方退避端縁は、平面視において前記第５内方退避端縁よりも内方に退避している。 In a preferred embodiment of the present invention, the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
　本発明の好ましい実施の形態においては、前記第１端縁は、平面視環状である。 In a preferred embodiment of the present invention, the first edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第３端縁は、平面視環状である。 In a preferred embodiment of the present invention, the third end edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第３内方退避端縁は、平面視環状である。 In a preferred embodiment of the present invention, the third inward withdrawal edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第４内方退避端縁は、平面視環状である。 In a preferred embodiment of the present invention, the fourth inward withdrawal edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第５内方退避端縁は、平面視環状である。 In a preferred embodiment of the present invention, the fifth inward withdrawal edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第１導電層は、ＩＴＯからなる。 In a preferred embodiment of the present invention, the first conductive layer is made of ITO.
　本発明の好ましい実施の形態においては、前記第２導電層は、金属からなる。 In a preferred embodiment of the present invention, the second conductive layer is made of metal.
　本発明の好ましい実施の形態においては、前記第２導電層は、Ａｌからなる。 In a preferred embodiment of the present invention, the second conductive layer is made of Al.
　本発明の好ましい実施の形態においては、前記パッシベーション膜は、ＳｉＮからなる。 In a preferred embodiment of the present invention, the passivation film is made of SiN.
　本発明の好ましい実施の形態においては、前記パッシベーション膜を覆う保護樹脂層を備えており、前記保護樹脂層は、平面視において前記第１端縁と一致する第２端縁を有する。 In a preferred embodiment of the present invention, a protective resin layer is provided to cover the passivation film, and the protective resin layer has a second edge that coincides with the first edge in plan view.
　本発明の好ましい実施の形態においては、前記第２端縁と前記第１端縁とは、連続した面をなす。 In a preferred embodiment of the present invention, the second end edge and the first end edge form a continuous surface.
　本発明の好ましい実施の形態においては、前記第２端縁は、平面視環状である。 In a preferred embodiment of the present invention, the second edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記保護樹脂層は、紫外線硬化樹脂からなる。 In a preferred embodiment of the present invention, the protective resin layer is made of an ultraviolet curable resin.
　本発明の好ましい実施の形態においては、前記保護樹脂層は、平面視において前記光電変換層の少なくとも一部を挟んで前記第２端縁と反対側に位置する第２外方端縁を有し、前記パッシベーション膜は、平面視において前記第２外方端縁と一致する第１外方端縁を有し、前記第１導電層は、前記第２外方端縁および前記第１外方端縁から外方に延出する延出部を有し、前記延出部の少なくとも一部を覆い、且つ前記第１導電層の材料よりも低抵抗の材料からなるバイパス導電部を備える。 In a preferred embodiment of the present invention, the protective resin layer has a second outer edge located on the opposite side of the second edge with at least a part of the photoelectric conversion layer in plan view. The passivation film has a first outer end edge that coincides with the second outer end edge in plan view, and the first conductive layer includes the second outer end edge and the first outer end edge. It has an extended portion that extends outward from the edge, covers at least a part of the extended portion, and includes a bypass conductive portion made of a material having a lower resistance than the material of the first conductive layer.
　本発明の好ましい実施の形態においては、前記第２外方端縁と前記第１外方端縁とは、連続した面をなす。 In a preferred embodiment of the present invention, the second outer edge and the first outer edge form a continuous surface.
　本発明の好ましい実施の形態においては、前記バイパス導電部は、前記第２外方端縁および前記第１外方端縁を覆う。 In a preferred embodiment of the present invention, the bypass conductive portion covers the second outer end edge and the first outer end edge.
　本発明の好ましい実施の形態においては、前記バイパス導電部は、Ａｇまたはカーボンを含む。 In a preferred embodiment of the present invention, the bypass conductive portion contains Ag or carbon.
　本発明の好ましい実施の形態においては、前記第２導電層は、平面視において前記第２外方端縁および前記第１外方端縁よりも内方に退避した第４外方退避端縁を有する。 In a preferred embodiment of the present invention, the second conductive layer has a fourth outer retraction edge that retreats inward from the second outer end edge and the first outer end edge in a plan view. Have.
　本発明の好ましい実施の形態においては、前記光電変換層は、平面視において前記第２外方端縁および前記第１外方端縁よりも内方に退避した第５外方退避端縁を有する。 In a preferred embodiment of the present invention, the photoelectric conversion layer has a second outer end edge and a fifth outer retreat edge that retreats inward from the first outer end edge in a plan view. .
　本発明の第７の側面によって提供される電子機器は、本発明の第６の側面によって提供される有機薄膜太陽電池モジュールと、前記有機薄膜太陽電池モジュールからの給電によって駆動する駆動部と、を備える。 An electronic device provided by the seventh aspect of the present invention includes an organic thin film solar cell module provided by the sixth aspect of the present invention, and a drive unit that is driven by power feeding from the organic thin film solar cell module. Prepare.
　本発明の第８の側面によって提供される有機薄膜太陽電池モジュールの製造方法は、透明な支持基板に透明な第１導電層を積層する工程と、前記第１導電層に有機薄膜からなる光電変換層を積層する工程と、前記光電変換層に第２導電層を積層する工程と、前記第２導電層を覆うパッシベーション膜を形成する工程と、前記パッシベーション膜に第２端縁を有する保護樹脂層を積層する工程と、前記第２端縁を境界として、前記パッシベーション膜を部分的に除去することにより平面視において前記第２端縁と一致する第１端縁を前記パッシベーション膜に形成する工程と、前記第１導電層を部分的に除去することにより、前記第２端縁および前記第１端縁に隣接する領域において、前記支持基板を露出させる工程と、を備える。 The organic thin film solar cell module manufacturing method provided by the eighth aspect of the present invention includes a step of laminating a transparent first conductive layer on a transparent support substrate, and photoelectric conversion comprising an organic thin film on the first conductive layer. A step of laminating a layer, a step of laminating a second conductive layer on the photoelectric conversion layer, a step of forming a passivation film covering the second conductive layer, and a protective resin layer having a second edge on the passivation film And forming a first edge on the passivation film that coincides with the second edge in plan view by partially removing the passivation film with the second edge as a boundary. And exposing the support substrate in a region adjacent to the second edge and the first edge by partially removing the first conductive layer.
　本発明の好ましい実施の形態においては、前記支持基板を露出させる工程において、平面視において前記第２端縁および前記第１端縁と一致する第３端縁を前記第１導電層に形成する。 In a preferred embodiment of the present invention, in the step of exposing the support substrate, a third edge that coincides with the second edge and the first edge in plan view is formed in the first conductive layer.
　本発明の好ましい実施の形態においては、前記第２端縁および前記第１端縁は、平面視環状である。 In a preferred embodiment of the present invention, the second end edge and the first end edge are annular in plan view.
　本発明の好ましい実施の形態においては、前記第３端縁は、平面視環状である。 In a preferred embodiment of the present invention, the third end edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第１導電層は、ＩＴＯからなる。 In a preferred embodiment of the present invention, the first conductive layer is made of ITO.
　本発明の好ましい実施の形態においては、前記第２導電層は、金属からなる。 In a preferred embodiment of the present invention, the second conductive layer is made of metal.
　本発明の好ましい実施の形態においては、前記第２導電層は、Ａｌからなる。 In a preferred embodiment of the present invention, the second conductive layer is made of Al.
　本発明の好ましい実施の形態においては、前記パッシベーション膜は、ＳｉＮからなる。 In a preferred embodiment of the present invention, the passivation film is made of SiN.
　本発明の好ましい実施の形態においては、前記保護樹脂層は、紫外線硬化樹脂からなる。 In a preferred embodiment of the present invention, the protective resin layer is made of an ultraviolet curable resin.
　本発明の好ましい実施の形態においては、前記保護樹脂層を積層する工程において、平面視において前記光電変換層の少なくとも一部を挟んで前記第２端縁と反対側に位置する第２外方端縁を形成し、前記第２端縁を境界として、前記パッシベーション膜を部分的に除去することにより平面視において前記第２外方端縁と一致する第１外方端縁を前記パッシベーション膜に形成する工程と、前記第１導電層のうち前記第２外方端縁および前記第１外方端縁から外方に延出する延出部の少なくとも一部を覆い、且つ前記第１導電層の材料よりも低抵抗の材料からなるバイパス導電部を形成する工程と、を備える。 In a preferred embodiment of the present invention, in the step of laminating the protective resin layer, a second outer end located on the opposite side of the second end edge across at least a part of the photoelectric conversion layer in plan view Forming a first edge, and forming a first outer edge on the passivation film that coincides with the second outer edge in plan view by partially removing the passivation film from the second edge as a boundary. And covering at least part of the second outer end edge and the first outer end edge of the first conductive layer, and extending at least a part of the first conductive layer. Forming a bypass conductive portion made of a material having a resistance lower than that of the material.
　本発明の好ましい実施の形態においては、前記バイパス導電部を形成する工程においては、前記バイパス導電部によって前記第２外方端縁および前記第１外方端縁を覆う。 In a preferred embodiment of the present invention, in the step of forming the bypass conductive portion, the bypass conductive portion covers the second outer end edge and the first outer end edge.
　本発明の好ましい実施の形態においては、前記バイパス導電部は、Ａｇまたはカーボンを含む。 In a preferred embodiment of the present invention, the bypass conductive portion contains Ag or carbon.
　本発明の第９の側面によって提供される有機薄膜太陽電池は、第１面およびこれと反対側の第２面を有する透明な支持基板と、前記支持基板の第２面側に配置された透明な第１電極層と、前記第１電極層の前記支持基板とは反対側に積層された、有機薄膜からなる光電変換層と、前記光電変換層の前記支持基板とは反対側に積層された第２電極層と、を含み、前記第１電極層は、表面に開口部を含んでおり、この開口部が前記支持基板の第１面側に意匠を表す。 An organic thin-film solar cell provided by a ninth aspect of the present invention includes a transparent support substrate having a first surface and a second surface opposite to the first surface, and a transparent substrate disposed on the second surface side of the support substrate. A first electrode layer, a photoelectric conversion layer made of an organic thin film laminated on the side opposite to the support substrate of the first electrode layer, and a layer opposite to the support substrate of the photoelectric conversion layer A second electrode layer, and the first electrode layer includes an opening on a surface thereof, and the opening represents a design on the first surface side of the support substrate.
　好ましい実施の形態では、前記開口部は、その平面視の外縁が、表すべき意匠の外縁の一部を構成している。 In a preferred embodiment, the outer edge of the opening portion of the opening constitutes a part of the outer edge of the design to be represented.
　好ましい実施の形態では、前記開口部は、平面視が所定形状のドットの集合として形成されている。 In a preferred embodiment, the opening is formed as a set of dots having a predetermined shape in plan view.
　好ましい実施の形態では、前記ドッドの集合が、表すべき意匠の一部を構成している。 In a preferred embodiment, the set of dodds constitutes a part of the design to be represented.
　好ましい実施の形態では、前記開口部は、所定幅で所定方向に延びる複数のラインが所定間隔で配列されたものとして形成されている。 In a preferred embodiment, the opening is formed by arranging a plurality of lines having a predetermined width and extending in a predetermined direction at predetermined intervals.
　好ましい実施の形態では、前記複数のラインの集合が、表すべき意匠の一部を構成している。 In a preferred embodiment, the set of the plurality of lines constitutes a part of the design to be represented.
　好ましい実施の形態では、前記開口部は、支持基板の第１面の外部から見たとき、ホログラムを発生する。 In a preferred embodiment, the opening generates a hologram when viewed from the outside of the first surface of the support substrate.
　好ましい実施の形態では、前記開口部としての複数のラインは、幅が５～２０μｍであり、３０～５０μｍ間隔で配列されている。 In a preferred embodiment, the plurality of lines as the openings have a width of 5 to 20 μm and are arranged at intervals of 30 to 50 μm.
　好ましい実施の形態では、前記第１電極層の前記開口部以外の部分の厚みは、１００～２００ｎｍである。 In a preferred embodiment, the thickness of the first electrode layer other than the opening is 100 to 200 nm.
　好ましい実施の形態では、前記開口部は、前記第１電極層を前記支持基板とは反対側の表面から所定深さ凹入させて形成されている。 In a preferred embodiment, the opening is formed by recessing the first electrode layer by a predetermined depth from the surface opposite to the support substrate.
　好ましい実施の形態では、前記開口部は、前記第１電極層を前記支持基板側の表面から所定深さ凹入させて形成されている。 In a preferred embodiment, the opening is formed by recessing the first electrode layer by a predetermined depth from the surface on the support substrate side.
　好ましい実施の形態では、前記開口部の除去深さは、厚み５０～１００ｎｍの薄肉部が残る深さである。 In a preferred embodiment, the removal depth of the opening is such that a thin portion having a thickness of 50 to 100 nm remains.
　好ましい実施の形態では、前記開口部は、前記第１電極層を厚み方向に貫通させて形成されている。 In a preferred embodiment, the opening is formed by penetrating the first electrode layer in the thickness direction.
　好ましい実施の形態では、前記第２電極層を前記光電変換層とは反対側において覆うパッシベーション層を備える。 In a preferred embodiment, a passivation layer is provided that covers the second electrode layer on the side opposite to the photoelectric conversion layer.
　好ましい実施の形態では、前記パッシベーション層を前記第２電極層とは反対側において覆う保護層を備える。 In a preferred embodiment, a protective layer is provided that covers the passivation layer on the side opposite to the second electrode layer.
　好ましい実施の形態では、前記パッシベーション層と前記保護層とを接合する接合層を備える。 In a preferred embodiment, a bonding layer for bonding the passivation layer and the protective layer is provided.
　好ましい実施の形態では、前記第１電極層は、ＩＴＯからなる。 In a preferred embodiment, the first electrode layer is made of ITO.
　好ましい実施の形態では、前記光電変換層の厚みは、１００～２００ｎｍである。 In a preferred embodiment, the photoelectric conversion layer has a thickness of 100 to 200 nm.
　好ましい実施の形態では、前記第２電極層の厚みは、１００～２００ｎｍである。 In a preferred embodiment, the thickness of the second electrode layer is 100 to 200 nm.
　好ましい実施の形態では、前記第２電極層は、金属からなる。 In a preferred embodiment, the second electrode layer is made of metal.
　好ましい実施の形態では、前記第２電極層は、Ａｌからなる。 In a preferred embodiment, the second electrode layer is made of Al.
好ましい実施の形態では、前記第１電極層、前記光電変換層、前記第２電極層および前記パッシペーション層の合計厚みは、１．０～２．０μｍである。 In a preferred embodiment, the total thickness of the first electrode layer, the photoelectric conversion layer, the second electrode layer, and the passivation layer is 1.0 to 2.0 μm.
　本発明の第１０の側面によって提供される有機薄膜太陽電池の製造方法は、第１面およびこれと反対側の第２面を有する透明な支持基板の前記第２面側に所定の厚みを有し、かつ表面に開口を備えた透明な第１電極層を形成するステップ、前記第１電極層上に光電変換層を形成するステップ、および、前記光電変換層上に第２電極層を形成するステップ、を含む。 The method for producing an organic thin-film solar cell provided by the tenth aspect of the present invention has a predetermined thickness on the second surface side of a transparent support substrate having a first surface and a second surface opposite to the first surface. And forming a transparent first electrode layer having an opening on the surface, forming a photoelectric conversion layer on the first electrode layer, and forming a second electrode layer on the photoelectric conversion layer Steps.
　好ましい実施形態では、前記第１電極層を形成するステップは、前記第１電極層をその厚み方向に除去して前記開口部を形成するステップを含む。 In a preferred embodiment, the step of forming the first electrode layer includes the step of removing the first electrode layer in the thickness direction to form the opening.
　好ましい実施の形態では、前記開口部を形成するステップは、前記第１電極層をその厚み方向に所定深さ除去して行う。 In a preferred embodiment, the step of forming the opening is performed by removing the first electrode layer by a predetermined depth in the thickness direction.
　好ましい実施の形態では、前記開口部を形成するステップは、厚み１００～２００ｎｍの前記第１電極層を厚み５０～１００ｎｍの薄肉部が残るようにして行う。 In a preferred embodiment, the step of forming the opening is performed such that a thin portion having a thickness of 50 to 100 nm remains in the first electrode layer having a thickness of 100 to 200 nm.
　好ましい実施の形態では、前記開口部を形成するステップは、前記支持基板とは反対側から前記第１電極層を除去して行う。 In a preferred embodiment, the step of forming the opening is performed by removing the first electrode layer from the side opposite to the support substrate.
　好ましい実施の形態では、前記開口部を形成するステップは、前記開口部を形成する以前の第１電極層を形成した後に行う。 In a preferred embodiment, the step of forming the opening is performed after forming the first electrode layer before forming the opening.
　好ましい実施の形態では、前記開口部を形成するステップは、前記支持基板の第１面側から前記第１電極層を除去して行う。 In a preferred embodiment, the step of forming the opening is performed by removing the first electrode layer from the first surface side of the support substrate.
　好ましい実施の形態では、前記開口部を形成するステップは、前記開口部を形成する以前の第１電極層に対し、前記第２電極層を形成するステップよりも後に行う。 In a preferred embodiment, the step of forming the opening is performed after the step of forming the second electrode layer on the first electrode layer before the opening is formed.
　好ましい実施の形態では、前記開口部を形成するステップは、前記第１電極層をその厚み方向に貫通する貫通部を形成することにより行う。 In a preferred embodiment, the step of forming the opening is performed by forming a penetrating portion that penetrates the first electrode layer in its thickness direction.
　好ましい実施の形態では、前記開口部を形成するステップは、５～２０μｍの幅で所定方向に延びる複数のラインが３０～５０μｍ間隔で配列されたものとして形成する。 In a preferred embodiment, the step of forming the opening is formed by arranging a plurality of lines having a width of 5 to 20 μm and extending in a predetermined direction at intervals of 30 to 50 μm.
　好ましい実施の形態では、前記開口部を形成するステップは、レーザを照射することにより行う。 In a preferred embodiment, the step of forming the opening is performed by laser irradiation.
　本発明の第１１の側面によって提供される電子機器は、筐体を有し、当該筐体の表面に前記支持基板の前記第１面が臨むようにして前記第９の側面に係る有機薄膜太陽電池を備える。 The electronic device provided by the 11th side surface of this invention has a housing | casing, The organic thin-film solar cell which concerns on the said 9th side surface so that the said 1st surface of the said support substrate may face the surface of the said housing | casing. Prepare.
　本発明の第１２の側面によって提供される有機薄膜太陽電池モジュールは、透明な支持基板と、前記支持基板に積層された透明な第１導電層と、第２導電層と、前記第１導電層および前記第２導電層に挟まれた有機薄膜からなる光電変換層と、前記第２導電層を覆うパッシベーション層と、を備え、前記パッシベーション層は、第１端縁を有し、前記第１端縁に隣接する領域において、前記支持基板が露出している。 The organic thin film solar cell module provided by the twelfth aspect of the present invention includes a transparent support substrate, a transparent first conductive layer laminated on the support substrate, a second conductive layer, and the first conductive layer. And a photoelectric conversion layer made of an organic thin film sandwiched between the second conductive layers, and a passivation layer covering the second conductive layer, the passivation layer having a first edge, and the first end The support substrate is exposed in a region adjacent to the edge.
　本発明の好ましい実施の形態においては、前記第１導電層は、平面視において前記第１端縁と一致する第３端縁を有する。 In a preferred embodiment of the present invention, the first conductive layer has a third edge that coincides with the first edge in plan view.
　本発明の好ましい実施の形態においては、前記第１導電層は、平面視において前記第１端縁よりも内方に退避した第３内方退避端縁を有する。 In a preferred embodiment of the present invention, the first conductive layer has a third inward retraction edge that retreats inward from the first end edge in plan view.
　本発明の好ましい実施の形態においては、前記第２導電層は、平面視において前記第１端縁よりも内方に退避した第４内方退避端縁を有する。 In a preferred embodiment of the present invention, the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
　本発明の好ましい実施の形態においては、前記光電変換層は、平面視において前記第１端縁よりも内方に退避した第５内方退避端縁を有する。 In a preferred embodiment of the present invention, the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
　本発明の好ましい実施の形態においては、前記第４内方退避端縁は、平面視において前記第５内方退避端縁よりも内方に退避している。 In a preferred embodiment of the present invention, the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
　本発明の好ましい実施の形態においては、前記第１端縁は、平面視環状である。 In a preferred embodiment of the present invention, the first edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第３端縁は、平面視環状である。 In a preferred embodiment of the present invention, the third end edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第３内方退避端縁は、平面視環状である。 In a preferred embodiment of the present invention, the third inward withdrawal edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第４内方退避端縁は、平面視環状である。 In a preferred embodiment of the present invention, the fourth inward withdrawal edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第５内方退避端縁は、平面視環状である。 In a preferred embodiment of the present invention, the fifth inward withdrawal edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第１導電層は、ＩＴＯからなる。 In a preferred embodiment of the present invention, the first conductive layer is made of ITO.
　本発明の好ましい実施の形態においては、前記第２導電層は、金属からなる。 In a preferred embodiment of the present invention, the second conductive layer is made of metal.
　本発明の好ましい実施の形態においては、前記第２導電層は、Ａｌからなる。 In a preferred embodiment of the present invention, the second conductive layer is made of Al.
　本発明の好ましい実施の形態においては、前記パッシベーション層は、ＳｉＮからなる。 In a preferred embodiment of the present invention, the passivation layer is made of SiN.
　本発明の好ましい実施の形態においては、前記パッシベーション層を覆う保護樹脂層を備えており、前記保護樹脂層は、平面視において前記第１端縁と一致する第２端縁を有する。 In a preferred embodiment of the present invention, a protective resin layer is provided to cover the passivation layer, and the protective resin layer has a second edge that coincides with the first edge in plan view.
　本発明の好ましい実施の形態においては、前記第２端縁と前記第１端縁とは、連続した面をなす。 In a preferred embodiment of the present invention, the second end edge and the first end edge form a continuous surface.
　本発明の好ましい実施の形態においては、前記第２端縁は、平面視環状である。 In a preferred embodiment of the present invention, the second edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記保護樹脂層は、紫外線硬化樹脂からなる。 In a preferred embodiment of the present invention, the protective resin layer is made of an ultraviolet curable resin.
　本発明の好ましい実施の形態においては、前記保護樹脂層は、平面視において前記光電変換層の少なくとも一部を挟んで前記第２端縁と反対側に位置する第２外方端縁を有し、前記パッシベーション層は、平面視において前記第２外方端縁と一致する第１外方端縁を有し、前記第１導電層は、前記第２外方端縁および前記第１外方端縁から外方に延出する延出部を有し、前記延出部の少なくとも一部を覆い、且つ前記第１導電層の材料よりも低抵抗の材料からなるバイパス導電部を備える。 In a preferred embodiment of the present invention, the protective resin layer has a second outer edge located on the opposite side of the second edge with at least a part of the photoelectric conversion layer in plan view. The passivation layer has a first outer edge that coincides with the second outer edge in a plan view, and the first conductive layer includes the second outer edge and the first outer edge. It has an extended portion that extends outward from the edge, covers at least a part of the extended portion, and includes a bypass conductive portion made of a material having a lower resistance than the material of the first conductive layer.
　本発明の好ましい実施の形態においては、前記第２外方端縁と前記第１外方端縁とは、連続した面をなす。 In a preferred embodiment of the present invention, the second outer edge and the first outer edge form a continuous surface.
　本発明の好ましい実施の形態においては、前記バイパス導電部は、前記第２外方端縁および前記第１外方端縁を覆う。 In a preferred embodiment of the present invention, the bypass conductive portion covers the second outer end edge and the first outer end edge.
　本発明の好ましい実施の形態においては、前記バイパス導電部は、Ａｇまたはカーボンを含む。 In a preferred embodiment of the present invention, the bypass conductive portion contains Ag or carbon.
　本発明の好ましい実施の形態においては、前記パッシベーション層は、平面視において前記光電変換層の少なくとも一部を挟んで前記第１端縁と反対側に位置する第１外方端縁を有し、前記第１導電層は、前記第１外方端縁から外方に延出する延出部を有し、前記延出部の少なくとも一部を覆い、且つ前記第１導電層の材料よりも低抵抗の材料からなるバイパス導電部と、前記バイパス導電部を覆う保護樹脂層と、を備える。 In a preferred embodiment of the present invention, the passivation layer has a first outer edge located on the opposite side of the first edge with at least a part of the photoelectric conversion layer in plan view, The first conductive layer has an extending portion extending outward from the first outer edge, covers at least a part of the extending portion, and is lower than the material of the first conductive layer. A bypass conductive portion made of a material of resistance, and a protective resin layer covering the bypass conductive portion.
　本発明の好ましい実施の形態においては、前記バイパス導電部は、前記第１外方端縁を覆う。 In a preferred embodiment of the present invention, the bypass conductive portion covers the first outer end edge.
　本発明の好ましい実施の形態においては、前記バイパス導電部は、Ａｇまたはカーボンを含む。 In a preferred embodiment of the present invention, the bypass conductive portion contains Ag or carbon.
　本発明の好ましい実施の形態においては、前記保護樹脂層は、平面視において前記バイパス導電部と重なり、且つ前記第１端縁よりも前記第１外方端縁側の領域に設けられた非透光部を含む。 In a preferred embodiment of the present invention, the protective resin layer overlaps with the bypass conductive portion in a plan view and is provided in a region closer to the first outer edge than the first edge. Part.
　本発明の好ましい実施の形態においては、前記非透光部は、白色である。 In a preferred embodiment of the present invention, the non-light-transmitting portion is white.
　本発明の好ましい実施の形態においては、前記第２導電層は、平面視において前記第２外方端縁および前記第１外方端縁よりも内方に退避した第４外方退避端縁を有する。 In a preferred embodiment of the present invention, the second conductive layer has a fourth outer retraction edge that retreats inward from the second outer end edge and the first outer end edge in a plan view. Have.
　本発明の好ましい実施の形態においては、前記光電変換層は、平面視において前記第２外方端縁および前記第１外方端縁よりも内方に退避した第５外方退避端縁を有する。 In a preferred embodiment of the present invention, the photoelectric conversion layer has a second outer end edge and a fifth outer retreat edge that retreats inward from the first outer end edge in a plan view. .
　本発明の第１３の側面によって提供される電子機器は、本発明の第１２の側面によって提供される有機薄膜太陽電池モジュールと、前記有機薄膜太陽電池モジュールからの給電によって駆動する駆動部と、を備える。 An electronic device provided by a thirteenth aspect of the present invention includes an organic thin film solar cell module provided by a twelfth aspect of the present invention, and a drive unit that is driven by power feeding from the organic thin film solar cell module. Prepare.
　本発明の第１４の側面によって提供される有機薄膜太陽電池モジュールの製造方法は、透明な支持基板に透明な第１導電膜を積層する工程と、前記第１導電膜に有機薄膜からなる光電変換層を積層する工程と、前記光電変換層に第２導電層を積層する工程と、前記第２導電層を覆う絶縁膜を積層する工程と、前記絶縁膜を部分的に除去することによる第１端縁を有するパッシベーション層の形成および前記第１導電膜の部分的な除去による第１導電層の形成を含み、前記第１端縁に隣接する領域において、前記支持基板を露出させる工程と、を備える。 The method for producing an organic thin film solar cell module provided by the fourteenth aspect of the present invention includes a step of laminating a transparent first conductive film on a transparent support substrate, and a photoelectric conversion comprising an organic thin film on the first conductive film. A step of laminating a layer, a step of laminating a second conductive layer on the photoelectric conversion layer, a step of laminating an insulating film covering the second conductive layer, and a first by partially removing the insulating film. Including forming a passivation layer having an edge and forming a first conductive layer by partially removing the first conductive film, and exposing the support substrate in a region adjacent to the first edge. Prepare.
　本発明の好ましい実施の形態においては、前記絶縁膜を形成する工程の後、前記支持基板を露出させる工程の前に、前記絶縁膜に第２端縁を有する保護樹脂層を積層する工程を備え、前記支持基板を露出させる工程は、前記第２端縁を境界として、前記絶縁膜を部分的に除去することにより平面視において前記第２端縁と一致する前記第１端縁を有する前記パッシベーション層を形成する工程と、前記第１導電膜のうち前記第１端縁および前記第２端縁から露出する部分除去することにより前記第１導電層を形成する工程と、を含む。 In a preferred embodiment of the present invention, a step of laminating a protective resin layer having a second edge on the insulating film is provided after the step of forming the insulating film and before the step of exposing the support substrate. The step of exposing the support substrate includes the passivation having the first edge that coincides with the second edge in plan view by partially removing the insulating film with the second edge as a boundary. Forming a layer, and forming the first conductive layer by removing portions of the first conductive film exposed from the first edge and the second edge.
　本発明の好ましい実施の形態においては、前記支持基板を露出させる工程において、平面視において前記第２端縁および前記第１端縁と一致する第３端縁を有する前記第１導電層を形成する。 In a preferred embodiment of the present invention, in the step of exposing the support substrate, the first conductive layer having the second edge and the third edge that coincides with the first edge in plan view is formed. .
　本発明の好ましい実施の形態においては、前記第２端縁および前記第１端縁は、平面視環状である。 In a preferred embodiment of the present invention, the second end edge and the first end edge are annular in plan view.
　本発明の好ましい実施の形態においては、前記第３端縁は、平面視環状である。 In a preferred embodiment of the present invention, the third end edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第１導電層は、ＩＴＯからなる。 In a preferred embodiment of the present invention, the first conductive layer is made of ITO.
　本発明の好ましい実施の形態においては、前記第２導電層は、金属からなる。 In a preferred embodiment of the present invention, the second conductive layer is made of metal.
　本発明の好ましい実施の形態においては、前記第２導電層は、Ａｌからなる。 In a preferred embodiment of the present invention, the second conductive layer is made of Al.
　本発明の好ましい実施の形態においては、前記パッシベーション層は、ＳｉＮからなる。 In a preferred embodiment of the present invention, the passivation layer is made of SiN.
　本発明の好ましい実施の形態においては、前記保護樹脂層は、紫外線硬化樹脂からなる。 In a preferred embodiment of the present invention, the protective resin layer is made of an ultraviolet curable resin.
　本発明の好ましい実施の形態においては、前記保護樹脂層を積層する工程において、平面視において前記光電変換層の少なくとも一部を挟んで前記第２端縁と反対側に位置する第２外方端縁を形成し、前記第２端縁を境界として、前記絶縁膜を部分的に除去することにより平面視において前記第２外方端縁と一致する第１外方端縁を有する前記パッシベーション層に形成する工程と、前記第１導電層のうち前記第２外方端縁および前記第１外方端縁から外方に延出する延出部の少なくとも一部を覆い、且つ前記第１導電層の材料よりも低抵抗の材料からなるバイパス導電部を形成する工程と、を備える。 In a preferred embodiment of the present invention, in the step of laminating the protective resin layer, a second outer end located on the opposite side of the second end edge across at least a part of the photoelectric conversion layer in plan view Forming an edge on the passivation layer having a first outer edge that coincides with the second outer edge in plan view by partially removing the insulating film with the second edge as a boundary. A step of forming and covering at least a part of the second outer end edge and the extending portion extending outward from the first outer end edge of the first conductive layer, and the first conductive layer Forming a bypass conductive portion made of a material having a resistance lower than that of the material.
　本発明の好ましい実施の形態においては、前記バイパス導電部を形成する工程においては、前記バイパス導電部によって前記第２外方端縁および前記第１外方端縁を覆う。 In a preferred embodiment of the present invention, in the step of forming the bypass conductive portion, the bypass conductive portion covers the second outer end edge and the first outer end edge.
　本発明の好ましい実施の形態においては、前記バイパス導電部は、Ａｇまたはカーボンを含む。 In a preferred embodiment of the present invention, the bypass conductive portion contains Ag or carbon.
　本発明の好ましい実施の形態においては、前記支持基板を露出させる工程は、前記絶縁膜を透して前記第１導電膜にレーザー光を照射することにより、前記第１導電膜および前記絶縁膜を部分的に除去する処理を含む。 In a preferred embodiment of the present invention, in the step of exposing the support substrate, the first conductive film and the insulating film are exposed by irradiating the first conductive film with laser light through the insulating film. Includes partial removal.
　本発明の好ましい実施の形態においては、前記支持基板を露出させる工程は、前記部分的に除去する処理により前記絶縁膜のうち平面視において前記レーザー光が照射された領域に隣接する領域が除去されることにより、前記第１導電膜のうち前記レーザー光が照射されていない部分を前記パッシベーション層から露出する延出部とする処理を含み、前記延出部の少なくとも一部を覆い、且つ前記第１導電層の材料よりも低抵抗の材料からなるバイパス導電部を形成する工程と、前記バイパス導電部を覆う保護樹脂層を形成する工程と、を備える。 In a preferred embodiment of the present invention, in the step of exposing the support substrate, a region adjacent to the region irradiated with the laser beam in plan view is removed from the insulating film by the partial removal process. A portion of the first conductive film that is not irradiated with the laser light is formed as an extended portion exposed from the passivation layer, covers at least a part of the extended portion, and A step of forming a bypass conductive portion made of a material having a resistance lower than that of the one conductive layer, and a step of forming a protective resin layer covering the bypass conductive portion.
　本発明の好ましい実施の形態においては、前記バイパス導電部は、Ａｇまたはカーボンを含む。 In a preferred embodiment of the present invention, the bypass conductive portion contains Ag or carbon.
　本発明の好ましい実施の形態においては、前記保護樹脂層を形成する工程においては、平面視において前記バイパス導電部と重なり、且つ前記第１端縁よりも前記第１外方端縁側の領域に非透光部形成する。 In a preferred embodiment of the present invention, in the step of forming the protective resin layer, it overlaps with the bypass conductive portion in a plan view and is not in the region on the first outer edge side with respect to the first edge. A translucent part is formed.
　本発明の第１５の側面によって提供される有機薄膜太陽電池モジュールは、透明な支持基板と、前記支持基板に積層された透明な第１導電層と、第２導電層と、前記第１導電層および前記第２導電層に挟まれた有機薄膜からなる光電変換層と、前記第２導電層を覆うパッシベーション層と、を備え、前記第１導電層は、平面視において前記パッシベーション層から延出する延出部と、当該延出部の端縁に両端が到達したスリットと、当該スリットによって区画され且つ前記スリットの前記両端に繋がる接続部端縁を有する接続部と、を有し、前記光電変換層は、平面視において前記第１導電層の前記接続部に内包され且つ厚さ方向に貫通する導通用貫通部を有し、前記第２導電層と前記第１導電層の前記接続部とは、前記光電変換層の前記導通用貫通部を介して導通しており、前記接続部のうち前記パッシベーション層から延出する接続延出部の少なくとも一部を覆う第１バスバー部と、当該第１バスバー部に導通する第１集極部とを有するバイパス導電部を備える。 The organic thin film solar cell module provided by the fifteenth aspect of the present invention includes a transparent support substrate, a transparent first conductive layer laminated on the support substrate, a second conductive layer, and the first conductive layer. And a photoelectric conversion layer made of an organic thin film sandwiched between the second conductive layers, and a passivation layer covering the second conductive layer, the first conductive layer extending from the passivation layer in plan view An extension part, a slit whose both ends have reached the edge of the extension part, and a connection part having a connection part edge defined by the slit and connected to the both ends of the slit, and the photoelectric conversion The layer includes a through-hole for conduction that is included in the connection portion of the first conductive layer in a plan view and penetrates in the thickness direction, and the second conductive layer and the connection portion of the first conductive layer are The photoelectric conversion layer A first bus bar portion covering at least a part of the connection extending portion extending from the passivation layer among the connection portions, and a first collection conducting to the first bus bar portion. A bypass conductive portion having a pole portion is provided.
　本発明の好ましい実施の形態においては、前記導通用貫通部は、平面視において円形状である。 In a preferred embodiment of the present invention, the through-hole for conduction has a circular shape in plan view.
　本発明の好ましい実施の形態においては、前記導通用貫通部は、前記接続部端縁と平行である方向を長手方向とする平面視細長形状である。 In a preferred embodiment of the present invention, the through-hole for conduction has an elongated shape in a plan view having a direction parallel to the edge of the connection portion as a longitudinal direction.
　本発明の好ましい実施の形態においては、前記第１集極部は、平面視において前記第２導電層および前記光電変換層と重なり、前記支持基板の厚さ方向において、前記第１集極部と前記第２導電層との間に前記パッシベーション層が介在する。 In a preferred embodiment of the present invention, the first electrode collector portion overlaps the second conductive layer and the photoelectric conversion layer in plan view, and in the thickness direction of the support substrate, the first electrode collector portion and The passivation layer is interposed between the second conductive layer.
　本発明の好ましい実施の形態においては、前記バイパス導電部は、前記第１導電層の前記延出部の少なくとも一部を覆う第２バスバー部と、当該第２バスバー部に導通する第２集極部とを有する。 In a preferred embodiment of the present invention, the bypass conductive portion includes a second bus bar portion that covers at least a part of the extension portion of the first conductive layer, and a second collector that is electrically connected to the second bus bar portion. Part.
　本発明の好ましい実施の形態においては、前記第２集極部は、平面視において前記第２導電層および前記光電変換層と重なり、前記支持基板の厚さ方向において、前記第２集極部と前記第２導電層との間に前記パッシベーション層が介在する。 In a preferred embodiment of the present invention, the second electrode collector portion overlaps the second conductive layer and the photoelectric conversion layer in a plan view, and in the thickness direction of the support substrate, the second electrode collector portion and The passivation layer is interposed between the second conductive layer.
　本発明の好ましい実施の形態においては、前記第２バスバー部は、前記第１導電層の前記延出部のうち前記接続部を挟む部分に両端が繋がり、且つ平面視において前記第１集極部を迂回する迂回部を有する。 In a preferred embodiment of the present invention, the second bus bar portion has both ends connected to a portion of the extension portion of the first conductive layer sandwiching the connection portion, and the first pole collector portion in a plan view. It has a detour part which detours.
　本発明の好ましい実施の形態においては、前記光電変換層は、厚さ方向に貫通し且つ外観に表れる意匠表示部を構成する意匠表示用貫通部を有し、前記意匠表示用貫通部は、前記導通用貫通部に対して前記接続部端縁とは反対側に位置している。 In a preferred embodiment of the present invention, the photoelectric conversion layer has a design display penetrating portion that constitutes a design display portion that penetrates in the thickness direction and appears on the appearance, and the design display penetrating portion includes It is located on the opposite side of the connecting portion end edge with respect to the conducting through portion.
　本発明の好ましい実施の形態においては、前記第１導電層は、表示領域を構成するための表示用開口と、当該表示用開口を区画する第３端縁と、前記パッシベーション層から前記表示用開口側に延出する第１延出部と、を有し、前記接続部は、前記第３端縁に両端が到達した前記スリットによって区画されている。 In a preferred embodiment of the present invention, the first conductive layer includes a display opening for forming a display area, a third edge that defines the display opening, and the display layer to the display opening. A first extending portion that extends to the side, and the connecting portion is partitioned by the slit having both ends reaching the third end edge.
　本発明の好ましい実施の形態においては、前記第１導電層は、表示領域を構成するための表示用開口と、当該表示用開口を区画する第３端縁と、当該第３端縁とは反対側に位置する第３外方端縁と、前記パッシベーション層から前記表示用開口側に延出する第１延出部と、前記パッシベーション層から前記表示用開口とは反対側に延出する第２延出部と、を有し、前記接続部は、前記第３外方端縁に両端が到達した前記スリットによって区画されている。 In a preferred embodiment of the present invention, the first conductive layer includes a display opening for forming a display region, a third edge that defines the display opening, and the third edge is opposite to the display opening. A third outer edge located on the side, a first extension extending from the passivation layer to the display opening, and a second extension extending from the passivation layer to the opposite side of the display opening. An extension portion, and the connection portion is partitioned by the slits whose both ends reach the third outer end edge.
　本発明の好ましい実施の形態においては、前記バイパス導電部を覆う保護樹脂層を備える。 In a preferred embodiment of the present invention, a protective resin layer covering the bypass conductive portion is provided.
　本発明の好ましい実施の形態においては、前記パッシベーション層は、平面視において前記表示用開口と対向する第１端縁を有し、前記保護樹脂層は、前記パッシベーション層を覆う第１保護樹脂層と、当該第１保護樹脂層に積層され且つ前記バイパス導電部を覆う第２保護樹脂層と、を含み、前記第１保護樹脂層は、平面視において前記第１端縁と一致する第２端縁を有する。 In a preferred embodiment of the present invention, the passivation layer has a first edge facing the display opening in plan view, and the protective resin layer includes a first protective resin layer that covers the passivation layer; A second protective resin layer that is laminated on the first protective resin layer and covers the bypass conductive portion, and the first protective resin layer coincides with the first edge in plan view Have
　本発明の好ましい実施の形態においては、前記第１端縁と前記第２端縁とは、連続した面をなす。 In a preferred embodiment of the present invention, the first end edge and the second end edge form a continuous surface.
　本発明の好ましい実施の形態においては、前記バイパス導電部は、平面視において前記第３端縁と一致する第７端縁を有する。 In a preferred embodiment of the present invention, the bypass conductive portion has a seventh edge that coincides with the third edge in plan view.
　本発明の好ましい実施の形態においては、前記第２保護樹脂層は、平面視において前記第３端縁および前記第７端縁に対して前記第１端縁とは反対側に位置する第６端縁を有し且つ前記支持基板に接している。 In a preferred embodiment of the present invention, the second protective resin layer has a sixth end located on the opposite side of the first end edge with respect to the third end edge and the seventh end edge in a plan view. It has an edge and is in contact with the support substrate.
　本発明の好ましい実施の形態においては、前記第２導電層は、平面視において前記第１端縁よりも内方に退避した第４内方退避端縁を有する。 In a preferred embodiment of the present invention, the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
　本発明の好ましい実施の形態においては、前記光電変換層は、平面視において前記第１端縁よりも内方に退避した第５内方退避端縁を有する。 In a preferred embodiment of the present invention, the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
　本発明の好ましい実施の形態においては、前記第４内方退避端縁は、平面視において前記第５内方退避端縁よりも内方に退避している。 In a preferred embodiment of the present invention, the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
　本発明の好ましい実施の形態においては、前記パッシベーション層は、平面視において前記表示用開口と対向する第１端縁を有し、前記バイパス導電部は、平面視において前記第３端縁に対して前記第１端縁とは反対側に位置する第７端縁を有する。 In a preferred embodiment of the present invention, the passivation layer has a first edge that opposes the display opening in a plan view, and the bypass conductive portion is opposed to the third edge in a plan view. The seventh end edge is located on the opposite side to the first end edge.
　本発明の好ましい実施の形態においては、前記保護樹脂層は、平面視において前記第７端縁に対して前記第１端縁とは反対側に位置する第２端縁を有し且つ前記支持基板に接している。 In a preferred embodiment of the present invention, the protective resin layer has a second edge located on a side opposite to the first edge with respect to the seventh edge in plan view, and the support substrate. Is in contact with
　本発明の好ましい実施の形態においては、前記第２導電層は、平面視において前記第１端縁よりも内方に退避した第４内方退避端縁を有する。 In a preferred embodiment of the present invention, the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
　本発明の好ましい実施の形態においては、前記光電変換層は、平面視において前記第１端縁よりも内方に退避した第５内方退避端縁を有する。 In a preferred embodiment of the present invention, the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
　本発明の好ましい実施の形態においては、前記第４内方退避端縁は、平面視において前記第５内方退避端縁よりも内方に退避している。 In a preferred embodiment of the present invention, the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
　本発明の好ましい実施の形態においては、前記第１端縁は、平面視環状である。 In a preferred embodiment of the present invention, the first edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第３端縁は、平面視環状である。 In a preferred embodiment of the present invention, the third end edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第４内方退避端縁は、平面視環状である。 In a preferred embodiment of the present invention, the fourth inward withdrawal edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第５内方退避端縁は、平面視環状である。 In a preferred embodiment of the present invention, the fifth inward withdrawal edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第７端縁は、平面視環状である。 In a preferred embodiment of the present invention, the seventh end edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第２端縁は、平面視環状である。 In a preferred embodiment of the present invention, the second edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第６端縁は、平面視環状である。 In a preferred embodiment of the present invention, the sixth end edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第１導電層は、ＩＴＯからなる。 In a preferred embodiment of the present invention, the first conductive layer is made of ITO.
　本発明の好ましい実施の形態においては、前記第２導電層は、金属からなる。 In a preferred embodiment of the present invention, the second conductive layer is made of metal.
　本発明の好ましい実施の形態においては、前記第２導電層は、Ａｌからなる。 In a preferred embodiment of the present invention, the second conductive layer is made of Al.
　本発明の好ましい実施の形態においては、前記パッシベーション層は、ＳｉＮからなる。 In a preferred embodiment of the present invention, the passivation layer is made of SiN.
　本発明の好ましい実施の形態においては、前記保護樹脂層は、紫外線硬化樹脂からなる。 In a preferred embodiment of the present invention, the protective resin layer is made of an ultraviolet curable resin.
　本発明の第１６の側面によって提供される電子機器は、本発明の第１５の側面によって提供される有機薄膜太陽電池モジュールと、前記有機薄膜太陽電池モジュールからの給電によって駆動する駆動部と、を備える。 According to a sixteenth aspect of the present invention, there is provided an electronic apparatus comprising: the organic thin film solar cell module provided by the fifteenth aspect of the present invention; and a drive unit that is driven by power feeding from the organic thin film solar cell module. Prepare.
　本発明の第１７の側面によって提供される有機薄膜太陽電池モジュールは、透明な支持基板と、前記支持基板に積層された透明な第１導電層と、第２導電層と、前記第１導電層および前記第２導電層に挟まれた有機薄膜からなる光電変換層と、前記第２導電層を覆うパッシベーション層と、を備え、前記第１導電層は、平面視において前記パッシベーション層から延出する延出部を有し、前記延出部の少なくとも一部を覆い、且つ前記第１導電層の材料よりも低抵抗の材料からなるバイパス導電部と、前記バイパス導電部を覆う保護樹脂層と、を備える。 An organic thin film solar cell module provided by a seventeenth aspect of the present invention includes a transparent support substrate, a transparent first conductive layer laminated on the support substrate, a second conductive layer, and the first conductive layer. And a photoelectric conversion layer made of an organic thin film sandwiched between the second conductive layers, and a passivation layer covering the second conductive layer, the first conductive layer extending from the passivation layer in plan view A bypass conductive part having an extension part, covering at least a part of the extension part and made of a material having a lower resistance than the material of the first conductive layer, and a protective resin layer covering the bypass conductive part; Is provided.
　本発明の好ましい実施の形態においては、前記パッシベーション層は、第１端縁を有し、前記第１端縁に隣接する領域において、前記支持基板が露出している。 In a preferred embodiment of the present invention, the passivation layer has a first edge, and the support substrate is exposed in a region adjacent to the first edge.
　本発明の好ましい実施の形態においては、前記第１導電層の前記延出部は、前記第１端縁から露出する第１延出部を含み、前記第１延出部は、平面視において前記第１端縁から離間する第３端縁を有する。 In a preferred embodiment of the present invention, the extension part of the first conductive layer includes a first extension part exposed from the first end edge, and the first extension part is A third edge spaced from the first edge;
　本発明の好ましい実施の形態においては、前記保護樹脂層は、前記パッシベーション層を覆う第１保護樹脂層と、当該第１保護樹脂層に積層され且つ前記バイパス導電部を覆う第２保護樹脂層と、を含み、前記第１保護樹脂層は、平面視において前記第１端縁と一致する第２端縁を有する。 In a preferred embodiment of the present invention, the protective resin layer includes a first protective resin layer that covers the passivation layer, and a second protective resin layer that is laminated on the first protective resin layer and covers the bypass conductive portion. The first protective resin layer has a second edge that coincides with the first edge in plan view.
　本発明の好ましい実施の形態においては、前記第１端縁と前記第２端縁とは、連続した面をなす。 In a preferred embodiment of the present invention, the first end edge and the second end edge form a continuous surface.
　本発明の好ましい実施の形態においては、前記バイパス導電部は、平面視において前記第３端縁と一致する第７端縁を有する。 In a preferred embodiment of the present invention, the bypass conductive portion has a seventh edge that coincides with the third edge in plan view.
　本発明の好ましい実施の形態においては、前記第２保護樹脂層は、平面視において前記第３端縁および前記第７端縁に対して前記第１端縁とは反対側に位置する第６端縁を有し且つ前記支持基板に接している。 In a preferred embodiment of the present invention, the second protective resin layer has a sixth end located on the opposite side of the first end edge with respect to the third end edge and the seventh end edge in a plan view. It has an edge and is in contact with the support substrate.
　本発明の好ましい実施の形態においては、前記第２導電層は、平面視において前記第１端縁よりも内方に退避した第４内方退避端縁を有する。 In a preferred embodiment of the present invention, the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
　本発明の好ましい実施の形態においては、前記光電変換層は、平面視において前記第１端縁よりも内方に退避した第５内方退避端縁を有する。 In a preferred embodiment of the present invention, the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
　本発明の好ましい実施の形態においては、前記第４内方退避端縁は、平面視において前記第５内方退避端縁よりも内方に退避している。 In a preferred embodiment of the present invention, the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
　本発明の好ましい実施の形態においては、前記パッシベーション層は、平面視において前記光電変換層の少なくとも一部を挟んで前記第１端縁と反対側に位置する第１外方端縁を有し、前記延出部は、前記第１外方端縁から延出する第２延出部を含み、前記第２延出部は、平面視において前記第１外方端縁から離間する第３外方端縁を有する。 In a preferred embodiment of the present invention, the passivation layer has a first outer edge located on the opposite side of the first edge with at least a part of the photoelectric conversion layer in plan view, The extension part includes a second extension part extending from the first outer end edge, and the second extension part is separated from the first outer end edge in a plan view. Has an edge.
　本発明の好ましい実施の形態においては、前記第１保護樹脂層は、平面視において前記第１外方端縁と一致する第２外方端縁を有する。 In a preferred embodiment of the present invention, the first protective resin layer has a second outer edge that coincides with the first outer edge in plan view.
　本発明の好ましい実施の形態においては、前記第１外方端縁と前記第２外方端縁とは、連続した面をなす。 In a preferred embodiment of the present invention, the first outer end edge and the second outer end edge form a continuous surface.
　本発明の好ましい実施の形態においては、前記バイパス導電部は、平面視において前記第３外方端縁と一致する第７外方端縁を有する。 In a preferred embodiment of the present invention, the bypass conductive portion has a seventh outer end edge that coincides with the third outer end edge in a plan view.
　本発明の好ましい実施の形態においては、前記第２保護樹脂層は、平面視において前記第３外方端縁および前記第７外方端縁に対して前記第１外方端縁とは反対側に位置する第６外方端縁を有し且つ前記支持基板に接している。 In a preferred embodiment of the present invention, the second protective resin layer is opposite to the first outer end edge with respect to the third outer end edge and the seventh outer end edge in a plan view. And has a sixth outer edge located on the support substrate.
　本発明の好ましい実施の形態においては、前記第２保護樹脂層は、平面視において前記バイパス導電部と重なり且つ前記第１端縁よりも前記第１外方端縁側の領域に設けられた非透光部を含む。 In a preferred embodiment of the present invention, the second protective resin layer overlaps with the bypass conductive portion in a plan view and is provided in a region that is provided in a region closer to the first outer edge than the first edge. Includes light.
　本発明の好ましい実施の形態においては、前記非透光部は、白色である。 In a preferred embodiment of the present invention, the non-light-transmitting portion is white.
　本発明の好ましい実施の形態においては、前記バイパス導電部は、平面視において前記第３端縁に対して前記第１端縁とは反対側に位置する第７端縁を有する。 In a preferred embodiment of the present invention, the bypass conductive portion has a seventh edge located on the opposite side of the first edge with respect to the third edge in plan view.
　本発明の好ましい実施の形態においては、前記保護樹脂層は、平面視において前記第７端縁に対して前記第１端縁とは反対側に位置する第２端縁を有し且つ前記支持基板に接している。 In a preferred embodiment of the present invention, the protective resin layer has a second edge located on a side opposite to the first edge with respect to the seventh edge in plan view, and the support substrate. Is in contact with
　本発明の好ましい実施の形態においては、前記第２導電層は、平面視において前記第１端縁よりも内方に退避した第４内方退避端縁を有する。 In a preferred embodiment of the present invention, the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
　本発明の好ましい実施の形態においては、前記光電変換層は、平面視において前記第１端縁よりも内方に退避した第５内方退避端縁を有する。 In a preferred embodiment of the present invention, the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
　本発明の好ましい実施の形態においては、前記第４内方退避端縁は、平面視において前記第５内方退避端縁よりも内方に退避している。 In a preferred embodiment of the present invention, the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
　本発明の好ましい実施の形態においては、前記パッシベーション層は、平面視において前記光電変換層の少なくとも一部を挟んで前記第１端縁と反対側に位置する第１外方端縁を有し、前記延出部は、前記第１外方端縁から延出する第２延出部を含み、前記第２延出部は、平面視において前記第１外方端縁から離間する第３外方端縁を有する。 In a preferred embodiment of the present invention, the passivation layer has a first outer edge located on the opposite side of the first edge with at least a part of the photoelectric conversion layer in plan view, The extension part includes a second extension part extending from the first outer end edge, and the second extension part is separated from the first outer end edge in a plan view. Has an edge.
　本発明の好ましい実施の形態においては、前記バイパス導電部は、平面視において前記第３外方端縁に対して前記第１外方端縁とは反対側に位置する第７外方端縁を有する。 In a preferred embodiment of the present invention, the bypass conductive portion has a seventh outer end edge located on a side opposite to the first outer end edge with respect to the third outer end edge in a plan view. Have.
　本発明の好ましい実施の形態においては、前記保護樹脂層は、平面視において第７外方端縁に対して前記第１外方端縁とは反対側に位置する第２外方端縁を有し且つ前記支持基板に接している。 In a preferred embodiment of the present invention, the protective resin layer has a second outer edge located on the opposite side of the first outer edge with respect to the seventh outer edge in plan view. And in contact with the support substrate.
　本発明の好ましい実施の形態においては、前記保護樹脂層は、平面視において前記バイパス導電部と重なり且つ前記第１端縁よりも前記第１外方端縁側の領域に設けられた非透光部を含む。 In a preferred embodiment of the present invention, the protective resin layer overlaps the bypass conductive portion in a plan view and is provided in a region closer to the first outer edge than the first edge. including.
　本発明の好ましい実施の形態においては、前記非透光部は、白色である。 In a preferred embodiment of the present invention, the non-light-transmitting portion is white.
　本発明の好ましい実施の形態においては、前記第１端縁は、平面視環状である。 In a preferred embodiment of the present invention, the first edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第３端縁は、平面視環状である。 In a preferred embodiment of the present invention, the third end edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第４内方退避端縁は、平面視環状である。 In a preferred embodiment of the present invention, the fourth inward withdrawal edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第５内方退避端縁は、平面視環状である。 In a preferred embodiment of the present invention, the fifth inward withdrawal edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第６端縁は、平面視環状である。 In a preferred embodiment of the present invention, the sixth end edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第７端縁は、平面視環状である。 In a preferred embodiment of the present invention, the seventh end edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第２端縁は、平面視環状である。 In a preferred embodiment of the present invention, the second edge is annular in plan view.
　本発明の好ましい実施の形態においては、前記第１導電層は、ＩＴＯからなる。 In a preferred embodiment of the present invention, the first conductive layer is made of ITO.
　本発明の好ましい実施の形態においては、前記第２導電層は、金属からなる。 In a preferred embodiment of the present invention, the second conductive layer is made of metal.
　本発明の好ましい実施の形態においては、前記第２導電層は、Ａｌからなる。 In a preferred embodiment of the present invention, the second conductive layer is made of Al.
　本発明の好ましい実施の形態においては、前記パッシベーション層は、ＳｉＮからなる。 In a preferred embodiment of the present invention, the passivation layer is made of SiN.
　本発明の好ましい実施の形態においては、前記保護樹脂層は、紫外線硬化樹脂からなる。 In a preferred embodiment of the present invention, the protective resin layer is made of an ultraviolet curable resin.
　本発明の第１８の側面によって提供される電子機器は、本発明の第１７の側面によって提供される有機薄膜太陽電池モジュールと、前記有機薄膜太陽電池モジュールからの給電によって駆動する駆動部と、を備える。 An electronic device provided by an eighteenth aspect of the present invention includes an organic thin film solar cell module provided by the seventeenth aspect of the present invention, and a drive unit that is driven by power feeding from the organic thin film solar cell module. Prepare.
　本発明の第１９の側面によって提供される有機薄膜太陽電池モジュールは、透明な支持基板と、前記支持基板に積層された透明な第１導電層と、第２導電層と、前記第１導電層および前記第２導電層に挟まれた有機薄膜からなる光電変換層と、を備え、前記第１導電層は、前記支持基板の一部が前記第１導電層から露出した基板露出領域を介して隣り合う２つの第１区画部を有しており、前記第２導電層は、前記基板露出領域の一部を挟んで隣り合う２つの第２区画部を有しており、前記隣り合う２つのうち一方の前記第１区画部は、前記基板露出領域を規定する第１区画部第１端縁を有し、前記隣り合う２つのうち他方の前記第１区画部は、前記基板露出領域を規定する第１区画部第２端縁を有し、前記隣り合う２つのうち一方の前記第２区画部は、平面視において前記隣り合う２つのうち一方の前記第１区画部に重なっているとともに、前記隣り合う２つのうち一方の前記第１区画部の前記第１区画部第１端縁に対して前記隣り合う２つのうち他方の前記第１区画部の前記第１区画部第２端縁とは反対側に位置する第２区画部第１端縁を有し、前記隣り合う２つのうち他方の前記第２区画部は、平面視において前記隣り合う２つのうち一方の前記第２区画部第１端縁と対向する第２区画部第２端縁を有し、前記光電変換層は、平面視において前記隣り合う２つのうち一方の前記第１区画部および前記隣り合う２つのうち他方の前記第２区画部の双方と重なる部分であって前記隣り合う２つのうち一方の前記第１区画部の前記第１区画部第１端縁のうち前記隣り合う２つのうち他方の前記第２区画部に重なる第１被覆部および前記隣り合う２つのうち他方の前記第２区画部の前記第２区画部第２端縁によって区画された光電変換層接続部に、厚さ方向に貫通する光電変換層貫通部を有し、前記基板露出領域は、前記隣り合う２つのうち他方の前記第２区画部の前記第２区画部第２端縁と交差する１以上の交差部を有する。 An organic thin film solar cell module provided by a nineteenth aspect of the present invention includes a transparent support substrate, a transparent first conductive layer laminated on the support substrate, a second conductive layer, and the first conductive layer. And a photoelectric conversion layer made of an organic thin film sandwiched between the second conductive layers, the first conductive layer passing through a substrate exposed region in which a part of the support substrate is exposed from the first conductive layer. The first conductive layer has two adjacent first partition portions, and the second conductive layer has two second partition portions adjacent to each other with a part of the substrate exposed region interposed therebetween. One of the first partition portions has a first edge of the first partition portion that defines the substrate exposure region, and the other of the two adjacent first partition portions defines the substrate exposure region. The first partition part has a second end edge, and one of the two adjacent ones is the first The partition portion overlaps the first partition portion of one of the two adjacent ones in plan view, and the first partition portion first edge of the first partition portion of the two adjacent ones. On the other hand, of the two adjacent ones, the second partition part first edge located on the opposite side to the first partition part second edge of the other first partition part is provided, The other second partition portion has a second partition portion second end facing the second partition portion first end of one of the two adjacent ones in plan view, and the photoelectric conversion layer is In the plan view, one of the two adjacent ones and the other of the two adjacent two second divided parts overlap each other, and the first one of the two adjacent ones. Among the two adjacent ones of the first partition part first edge of the part A thickness of the first covering portion that overlaps the second partition portion on the other side and the photoelectric conversion layer connecting portion partitioned by the second edge of the second partition portion of the other two partition portions of the two adjacent ones. One or more crossing parts which have a photoelectric conversion layer penetration part which penetrates in the direction, and the substrate exposure field crosses the 2nd division part 2nd edge of the other said 2nd division part among the two adjacent. Have
　本発明の好ましい実施の形態においては、前記隣り合う２つのうち一方の前記第１区画部は、平面視において前記光電変換層接続部と重ならず且つ前記第２導電層と重なる第１電極部を有し、前記隣り合う２つのうち一方の前記第２区画部は、平面視において前記第１電極部と一致する第２電極部を有し、前記光電変換層は、平面視において前記第１電極部および前記第２電極部と一致する光電変換層発電部を有する。 In a preferred embodiment of the present invention, one of the adjacent two first partition portions does not overlap with the photoelectric conversion layer connection portion in a plan view and overlaps with the second conductive layer. One of the two adjacent sections has a second electrode portion that coincides with the first electrode portion in plan view, and the photoelectric conversion layer has the first electrode in plan view. A photoelectric conversion layer power generation unit that coincides with the electrode unit and the second electrode unit is provided.
　本発明の好ましい実施の形態においては、前記隣り合う２つのうち一方の前記第１区画部は、平面視において前記光電変換層接続部と一致する第１接続部を有し、前記隣り合う２つのうち他方の前記第２区画部は、平面視において前記光電変換層接続部と一致する第２接続部を有する。 In a preferred embodiment of the present invention, one of the two adjacent ones has a first connection portion that coincides with the photoelectric conversion layer connection portion in plan view, and the two adjacent The other second partition portion has a second connection portion that coincides with the photoelectric conversion layer connection portion in plan view.
　本発明の好ましい実施の形態においては、平面視における前記２つの第１区画部が並ぶ方向と交差する方向において、前記光電変換層接続部と前記光電変換層発電部の一部とが隣り合っている。 In a preferred embodiment of the present invention, the photoelectric conversion layer connecting portion and a part of the photoelectric conversion layer power generation portion are adjacent to each other in a direction intersecting with the direction in which the two first partition portions are arranged in plan view. Yes.
　本発明の好ましい実施の形態においては、平面視における前記２つの第１区画部が並ぶ方向と交差する方向において、前記光電変換層接続部の両側に前記光電変換層発電部が位置する。 In a preferred embodiment of the present invention, the photoelectric conversion layer power generation units are located on both sides of the photoelectric conversion layer connection unit in a direction intersecting with the direction in which the two first partition units are arranged in plan view.
　本発明の好ましい実施の形態においては、前記光電変換層貫通部は、平面視円形状である。 In a preferred embodiment of the present invention, the photoelectric conversion layer penetrating portion has a circular shape in plan view.
　本発明の好ましい実施の形態においては、前記隣り合う２つのうち一方の前記第１区画部の前記第１接続部は、平面視において前記光電変換層貫通部に内包され且つ厚さ方向に貫通する第１貫通部を有する。 In a preferred embodiment of the present invention, the first connection part of the first partition part of one of the two adjacent parts is included in the photoelectric conversion layer penetrating part in a plan view and penetrates in the thickness direction. It has a 1st penetration part.
　本発明の好ましい実施の形態においては、前記第１貫通部の内端縁は、平面視において前記光電変換層貫通部の内端縁から離間している。 In a preferred embodiment of the present invention, the inner end edge of the first penetrating portion is separated from the inner end edge of the photoelectric conversion layer penetrating portion in plan view.
　本発明の好ましい実施の形態においては、前記隣り合う２つのうち一方の前記第１区画部の前記第１接続部は、平面視における前記光電変換層貫通部に内包される領域において前記支持基板を覆っている。 In preferable embodiment of this invention, the said 1st connection part of one said 1st division part of the said adjacent two is the said support substrate in the area | region enclosed by the said photoelectric converting layer penetration part in planar view. Covering.
　本発明の好ましい実施の形態においては、前記隣り合う２つのうち他方の前記第２区画部は、前記第２区画部第２端縁に繋がり且つ前記隣り合う２つのうち一方の前記第２区画部から離間する側に延びる第２区画部第３端縁を有し、前記基板露出領域は、前記隣り合う２つのうち他方の前記第２区画部の前記第２区画部第２端縁と前記第２区画部第３端縁との一箇所ずつと交差する２つの前記交差部を有する。 In a preferred embodiment of the present invention, the other second partition part of the two adjacent ones is connected to the second edge of the second partition part and the second partition part of one of the two adjacent parts. A second partition section third end edge extending to a side away from the second partition section, and the substrate exposure area includes the second partition section second end edge of the other second partition section and the second section. It has two said crossing parts which cross | intersect one part with a 2 division part 3rd edge.
　本発明の好ましい実施の形態においては、前記基板露出領域は、前記隣り合う２つのうち他方の前記第２区画部の前記第２区画部第２端縁の二箇所と交差する２つの前記交差部を有する。 In a preferred embodiment of the present invention, the substrate exposed region has two intersecting portions that intersect two places of the second partition portion second edge of the other second partition portion of the two adjacent ones. Have
　本発明の好ましい実施の形態においては、平面視において前記２つの第２区画部と重ならない領域において、前記隣り合う２つのうち一方の前記第１区画部の前記第１区画部第１端縁は、第１辺を有し、前記隣り合う２つのうち他方の前記第１区画部の前記第１区画部第２端縁は、前記第１辺と平行である第２辺を有する。 In a preferred embodiment of the present invention, in a region that does not overlap the two second partition portions in plan view, the first partition portion first edge of one of the adjacent two partition portions is The first partition portion second end edge of the other first partition portion of the two adjacent ones has a second side that is parallel to the first side.
　本発明の好ましい実施の形態においては、前記第１辺および前記第２辺は、直線状である。 In a preferred embodiment of the present invention, the first side and the second side are linear.
　本発明の好ましい実施の形態においては、前記隣り合う２つのうち一方の前記第２区画部の前記第２区画部第１端縁と前記隣り合う２つのうち他方の前記第２区画部の前記第２区画部第２端縁とは、互いに平行である。 In a preferred embodiment of the present invention, the second partition part first end edge of the second partition part of one of the two adjacent parts and the second partition part of the other of the two adjacent parts. The two partition portion second edges are parallel to each other.
　本発明の好ましい実施の形態においては、前記隣り合う２つのうち一方の前記第２区画部の前記第２区画部第１端縁と前記隣り合う２つのうち他方の前記第２区画部の前記第２区画部第２端縁は、直線状である。 In a preferred embodiment of the present invention, the second partition part first end edge of the second partition part of one of the two adjacent parts and the second partition part of the other of the two adjacent parts. The second partition portion second edge is linear.
　本発明の好ましい実施の形態においては、前記隣り合う２つのうち一方の前記第１区画部の前記第１辺、前記隣り合う２つのうち他方の前記第１区画部の前記第２辺、前記隣り合う２つのうち一方の前記第２区画部の前記第２区画部第１端縁および前記隣り合う２つのうち他方の前記第２区画部の前記第２区画部第２端縁は、互いに平行である。 In a preferred embodiment of the present invention, the first side of the first partition part of the two adjacent ones, the second side of the other first partition part of the two adjacent parts, and the neighbors. The second partition portion first edge of the second partition portion of one of the two mating portions and the second partition portion second edge of the other second partition portion of the two adjacent partitions are parallel to each other. is there.
　本発明の好ましい実施の形態においては、前記第１辺、前記第２辺、前記第２区画部第１端縁および前記第２区画部第２端縁は、直線状である。 In a preferred embodiment of the present invention, the first side, the second side, the first edge of the second partition part, and the second edge of the second partition part are linear.
　本発明の好ましい実施の形態においては、隣り合う３以上の前記第１区画部および隣り合う３以上の前記第２区画部が、配列されている。 In a preferred embodiment of the present invention, three or more adjacent first partition portions and three or more adjacent second partition portions are arranged.
　本発明の好ましい実施の形態においては、隣り合う３以上の前記第１区画部および隣り合う３以上の前記第２区画部が、一直線上に配列されている。 In a preferred embodiment of the present invention, three or more adjacent first partition portions and three or more adjacent second partition portions are arranged in a straight line.
　本発明の好ましい実施の形態においては、隣り合う３以上の前記第１区画部および隣り合う３以上の前記第２区画部が、環状に配列されている。 In a preferred embodiment of the present invention, three or more adjacent first partition portions and three or more adjacent second partition portions are arranged in a ring shape.
　本発明の好ましい実施の形態においては、前記隣り合う３以上の第２区画部のうち２つの前記第２区画部の間にある前記第２区画部は、前記第２区画部第１端縁および前記第２区画部第２端縁と、前記第２区画部第１端縁および前記第２区画部第２端縁の両端同士を繋ぐ２つの第２区画部第３端縁と、を有する。 In a preferred embodiment of the present invention, among the three or more adjacent second partition portions, the second partition portion between two of the second partition portions is the second partition portion first edge and The second partition part second edge, and the second partition part first edge and the second partition part third edge that connects both ends of the second partition part second edge.
　本発明の好ましい実施の形態においては、前記隣り合う３以上の第２区画部のうち２つの前記第２区画部の間にある前記第２区画部の前記第２区画部第１端縁と前記第２区画部第２端縁とは、互いに平行である。 In preferable embodiment of this invention, the said 2nd division part 1st edge of the said 2nd division part between two said 2nd division parts among the said 3 or more adjacent 2nd division parts, and the said The second partition portion second edge is parallel to each other.
　本発明の好ましい実施の形態においては、前記隣り合う３以上の第２区画部のうち２つの前記第２区画部の間にある前記第２区画部の前記２つの第２区画部第３端縁は、互いに平行である。 In preferable embodiment of this invention, the said 2nd 2nd division part 3rd edge of the said 2nd division part between two said 2nd division parts among the said 3 or more adjacent 2nd division parts. Are parallel to each other.
　本発明の好ましい実施の形態においては、前記隣り合う３以上の第２区画部のうち２つの前記第２区画部の間にある前記第２区画部の前記第２区画部第１端縁および前記第２区画部第２端縁と前記２つの第２区画部第３端縁とは、互いに直角である。 In a preferred embodiment of the present invention, the second partition portion first edge of the second partition portion between two of the three or more second partition portions adjacent to each other and the second partition portion and the second partition portion The second edge of the second partition part and the third edge of the two second partition parts are perpendicular to each other.
　本発明の好ましい実施の形態においては、前記第１導電層は、平面視において前記光電変換層接続部に一致する外部接続部と、当該外部接続部に繋がり且つ前記第２導電層および前記光電変換層から露出する外部電極部と、を有する第３区画部を有する。 In a preferred embodiment of the present invention, the first conductive layer includes an external connection portion coinciding with the photoelectric conversion layer connection portion in plan view, and the second conductive layer and the photoelectric conversion connected to the external connection portion. And a third partition portion having an external electrode portion exposed from the layer.
　本発明の好ましい実施の形態においては、前記第１導電層は、ＩＴＯからなる。 In a preferred embodiment of the present invention, the first conductive layer is made of ITO.
　本発明の好ましい実施の形態においては、前記第２導電層は、金属からなる。 In a preferred embodiment of the present invention, the second conductive layer is made of metal.
　本発明の好ましい実施の形態においては、前記第２導電層は、Ａｌからなる。 In a preferred embodiment of the present invention, the second conductive layer is made of Al.
　本発明の好ましい実施の形態においては、前記第２導電層を覆うパッシベーション層を備える。 In a preferred embodiment of the present invention, a passivation layer covering the second conductive layer is provided.
　本発明の好ましい実施の形態においては、前記パッシベーション層は、ＳｉＮまたはＳｉＯＮからなる。 In a preferred embodiment of the present invention, the passivation layer is made of SiN or SiON.
　本発明の第２０の側面によって提供される電子機器は、本発明の第１９の側面によって提供される有機薄膜太陽電池モジュールと、前記有機薄膜太陽電池モジュールからの給電によって駆動する駆動部と、を備える。 An electronic device provided by a twentieth aspect of the present invention includes an organic thin film solar cell module provided by the nineteenth aspect of the present invention, and a drive unit that is driven by power feeding from the organic thin film solar cell module. Prepare.
　本発明のその他の特徴および利点は、添付図面を参照して以下に行う詳細な説明によって、より明らかとなろう。 Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.
本発明の第１実施形態に基づく有機薄膜太陽電池モジュールを示す要部平面図である。It is a principal part top view which shows the organic thin film solar cell module based on 1st Embodiment of this invention. 図１のＩＩ－ＩＩ線に沿う断面図である。FIG. 2 is a cross-sectional view taken along the line II-II in FIG. 本発明の第１実施形態に基づく有機薄膜太陽電池モジュールを示す要部拡大平面図である。It is a principal part enlarged plan view which shows the organic thin film solar cell module based on 1st Embodiment of this invention. 図３のＩＶ－ＩＶ線に沿う要部拡大断面図である。FIG. 4 is an enlarged cross-sectional view of a main part along line IV-IV in FIG. 3. 図３のＶ－Ｖ線に沿う要部拡大断面図である。FIG. 5 is an enlarged cross-sectional view of a main part taken along line VV in FIG. 3. 本発明の第１実施形態に基づく有機薄膜太陽電池モジュールを示す要部拡大平面図である。It is a principal part enlarged plan view which shows the organic thin film solar cell module based on 1st Embodiment of this invention. 図６のＶＩＩ－ＶＩＩ線に沿う要部拡大断面図である。FIG. 7 is an enlarged cross-sectional view of a main part taken along line VII-VII in FIG. 6. 本発明の第１実施形態に基づく有機薄膜太陽電池モジュールおよび電子機器を示すシステム構成図である。It is a system block diagram which shows the organic thin film solar cell module and electronic device based on 1st Embodiment of this invention. 本発明の第１実施形態に基づく有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大平面図である。It is a principal part enlarged plan view which shows an example of the manufacturing method of the organic thin film solar cell module based on 1st Embodiment of this invention. 本発明の第１実施形態に基づく有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows an example of the manufacturing method of the organic thin-film solar cell module based on 1st Embodiment of this invention. 本発明の第１実施形態に基づく有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大平面図である。It is a principal part enlarged plan view which shows an example of the manufacturing method of the organic thin film solar cell module based on 1st Embodiment of this invention. 本発明の第１実施形態に基づく有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows an example of the manufacturing method of the organic thin-film solar cell module based on 1st Embodiment of this invention. 本発明の第１実施形態に基づく有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大平面図である。It is a principal part enlarged plan view which shows an example of the manufacturing method of the organic thin film solar cell module based on 1st Embodiment of this invention. 本発明の第１実施形態に基づく有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows an example of the manufacturing method of the organic thin-film solar cell module based on 1st Embodiment of this invention. 本発明の第１実施形態に基づく有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大平面図である。It is a principal part enlarged plan view which shows an example of the manufacturing method of the organic thin film solar cell module based on 1st Embodiment of this invention. 図１５のＸＶＩ－ＸＶＩ線に沿う要部拡大断面図である。FIG. 16 is an enlarged cross-sectional view of a main part taken along line XVI-XVI in FIG. 15. 本発明の第１実施形態に基づく有機薄膜太陽電池モジュールの変形例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the modification of the organic thin film solar cell module based on 1st Embodiment of this invention. 本発明の第２実施形態に基づく電子機器を示す平面図である。It is a top view which shows the electronic device based on 2nd Embodiment of this invention. 図１８の電子機器を示すシステム構成図である。It is a system block diagram which shows the electronic device of FIG. 本発明の第２実施形態に基づく有機薄膜太陽電池モジュールを示す平面図である。It is a top view which shows the organic thin film solar cell module based on 2nd Embodiment of this invention. 図２０の有機薄膜太陽電池モジュールを示す分解斜視図である。It is a disassembled perspective view which shows the organic thin film solar cell module of FIG. 図２０のＸＸＩＩ－ＸＸＩＩ線に沿う要部拡大断面図である。FIG. 21 is an enlarged cross-sectional view of a main part along the line XXII-XXII in FIG. 20. 図２０のＸＸＩＩＩ－ＸＸＩＩＩ線に沿う要部拡大断面図である。FIG. 21 is an enlarged cross-sectional view of a main part along the line XXIII-XXIII in FIG. 20. 図２０のＸＸＩＶ－ＸＸＩＶ線に沿う要部拡大断面図である。FIG. 22 is an enlarged cross-sectional view of a main part along the line XXIV-XXIV in FIG. 20. 図２０のＸＸＶ－ＸＸＶ線に沿う要部拡大断面図である。FIG. 21 is an enlarged cross-sectional view of a main part along the line XXV-XXV in FIG. 20. 図２０の有機薄膜太陽電池モジュールの第１導電層を示す平面図である。It is a top view which shows the 1st conductive layer of the organic thin-film solar cell module of FIG. 図２０の有機薄膜太陽電池モジュールの第２導電層を示す平面図である。It is a top view which shows the 2nd conductive layer of the organic thin-film solar cell module of FIG. 図２０の有機薄膜太陽電池モジュールの光電変換層を示す平面図である。It is a top view which shows the photoelectric converting layer of the organic thin film solar cell module of FIG. 図２０の有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows an example of the manufacturing method of the organic thin film solar cell module of FIG. 図２０の有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows an example of the manufacturing method of the organic thin film solar cell module of FIG. 図２０の有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows an example of the manufacturing method of the organic thin film solar cell module of FIG. 図２０の有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows an example of the manufacturing method of the organic thin film solar cell module of FIG. 本発明の第２実施形態に基づく有機薄膜太陽電池モジュールの変形例を示す平面図である。It is a top view which shows the modification of the organic thin film solar cell module based on 2nd Embodiment of this invention. 図３３の有機薄膜太陽電池モジュールの第１導電層を示す平面図である。It is a top view which shows the 1st conductive layer of the organic thin-film solar cell module of FIG. 図３３の有機薄膜太陽電池モジュールの第２導電層を示す平面図である。It is a top view which shows the 2nd conductive layer of the organic thin-film solar cell module of FIG. 図３３の有機薄膜太陽電池モジュールの光電変換層を示す平面図である。It is a top view which shows the photoelectric converting layer of the organic thin film solar cell module of FIG. 本発明の第３実施形態に基づく電子機器を示す平面図である。It is a top view which shows the electronic device based on 3rd Embodiment of this invention. 図３７の電子機器を示すシステム構成図である。It is a system block diagram which shows the electronic device of FIG. 本発明の第３実施形態に基づく有機薄膜太陽電池モジュールを示す平面図である。It is a top view which shows the organic thin film solar cell module based on 3rd Embodiment of this invention. 図３９の有機薄膜太陽電池モジュールの第１導電層を示す平面図である。It is a top view which shows the 1st conductive layer of the organic thin-film solar cell module of FIG. 図３９の有機薄膜太陽電池モジュールの第２導電層を示す平面図である。It is a top view which shows the 2nd conductive layer of the organic thin-film solar cell module of FIG. 図３９の有機薄膜太陽電池モジュールの光電変換層を示す平面図である。It is a top view which shows the photoelectric converting layer of the organic thin-film solar cell module of FIG. 本発明の第４実施形態に基づく有機薄膜太陽電池モジュールを示す要部拡大断面図である。It is a principal part expanded sectional view which shows the organic thin film solar cell module based on 4th Embodiment of this invention. 本発明の第５および第６実施形態に基づく有機薄膜太陽電池モジュールおよびこれらを用いた電子機器を示す平面図である。It is a top view which shows the organic thin-film solar cell module based on 5th and 6th embodiment of this invention, and an electronic device using these. 図４４の有機薄膜太陽電池モジュールおよび電子機器を示す底面図である。It is a bottom view which shows the organic thin film solar cell module and electronic device of FIG. 図４４のＸＬＶＩ－ＸＬＶＩ線に沿う模式的な断面図である。FIG. 45 is a schematic sectional view taken along line XLVI-XLVI of FIG. 44. 図４４のＸＬＶＩＩ－ＸＬＶＩＩ線に沿う要部拡大断面図である。FIG. 45 is an essential part enlarged cross-sectional view taken along line XLVII-XLVII in FIG. 44. 図４４の電子機器を示すシステム構成図である。FIG. 45 is a system configuration diagram showing the electronic device of FIG. 44. 本発明の第５実施形態に基づく有機薄膜太陽電池モジュールを示す要部分解斜視図である。It is a principal part disassembled perspective view which shows the organic thin-film solar cell module based on 5th Embodiment of this invention. 本発明の第５実施形態に基づく有機薄膜太陽電池モジュールの第１導電層を示す平面図である。It is a top view which shows the 1st conductive layer of the organic thin-film solar cell module based on 5th Embodiment of this invention. 本発明の第５実施形態に基づく有機薄膜太陽電池モジュールの光電変換層を示す平面図である。It is a top view which shows the photoelectric converting layer of the organic thin film solar cell module based on 5th Embodiment of this invention. 本発明の第５実施形態に基づく有機薄膜太陽電池モジュールの第２導電層を示す平面図である。It is a top view which shows the 2nd conductive layer of the organic thin-film solar cell module based on 5th Embodiment of this invention. 本発明の第５実施形態に基づく有機薄膜太陽電池モジュールの保護樹脂層およびバイパス導電部を示す平面図である。It is a top view which shows the protective resin layer and bypass conductive part of the organic thin-film solar cell module based on 5th Embodiment of this invention. 本発明の第６実施形態に基づく有機薄膜太陽電池モジュールの第１導電層を示す平面図である。It is a top view which shows the 1st conductive layer of the organic thin-film solar cell module based on 6th Embodiment of this invention. 本発明の第６実施形態に基づく有機薄膜太陽電池モジュールの光電変換層を示す平面図である。It is a top view which shows the photoelectric converting layer of the organic thin film solar cell module based on 6th Embodiment of this invention. 本発明の第６実施形態に基づく有機薄膜太陽電池モジュールの第２導電層を示す平面図である。It is a top view which shows the 2nd conductive layer of the organic thin-film solar cell module based on 6th Embodiment of this invention. 本発明の第６実施形態に基づく有機薄膜太陽電池モジュールの保護樹脂層およびバイパス導電部を示す平面図である。It is a top view which shows the protective resin layer and bypass conductive part of the organic thin-film solar cell module based on 6th Embodiment of this invention. 本発明の第５実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 5th Embodiment of this invention. 本発明の第５実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 5th Embodiment of this invention. 本発明の第５実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 5th Embodiment of this invention. 本発明の第５実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 5th Embodiment of this invention. 本発明の第５実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 5th Embodiment of this invention. 本発明の第５実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 5th Embodiment of this invention. 本発明の第５実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 5th Embodiment of this invention. 本発明の第５実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 5th Embodiment of this invention. 本発明の第５実施形態に基づく有機薄膜太陽電池モジュールの変形例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the modification of the organic thin-film solar cell module based on 5th Embodiment of this invention. 本発明の第５実施形態に基づく有機薄膜太陽電池モジュールの他の変形例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the other modification of the organic thin-film solar cell module based on 5th Embodiment of this invention. 本発明の有機薄膜太陽電池が用いられる電子機器の一例を示す平面図である。It is a top view which shows an example of the electronic device with which the organic thin film solar cell of this invention is used. 本発明の第７～第９実施形態に係る有機薄膜太陽電池の平面図である。FIG. 7 is a plan view of organic thin-film solar cells according to seventh to ninth embodiments of the present invention. 本発明の第７実施形態に係る有機薄膜太陽電池の構造を示し、図６９のＬＸＸ－ＬＸＸ線に沿う拡大断面図に相当する図である。FIG. 70 is a diagram showing a structure of an organic thin-film solar cell according to a seventh embodiment of the present invention and corresponding to an enlarged cross-sectional view along the line LXX-LXX in FIG. 69. 図７０に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図７０に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図７０に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図７０に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図７０に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図７０に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図７０に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 本発明の第７実施形態に係る有機薄膜太陽電池の裏面図である。It is a back view of the organic thin-film solar cell concerning 7th Embodiment of this invention. 本発明の第８実施形態に係る有機薄膜太陽電池の構造を示し、図６９のＬＸＸ－ＬＸＸ線に沿う拡大断面図に相当する図である。FIG. 70 is a diagram showing a structure of an organic thin-film solar cell according to an eighth embodiment of the present invention and corresponding to an enlarged cross-sectional view along the line LXX-LXX in FIG. 69. 図７９示す有機薄膜太陽電池の製造工程の一例の説明図である。FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin-film solar cell shown in FIG. 79. 図７９に示す有機薄膜太陽電池の製造工程の一例の説明図である。FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin film solar cell shown in FIG. 79. 図７９に示す有機薄膜太陽電池の製造工程の一例の説明図である。FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin film solar cell shown in FIG. 79. 図７９に示す有機薄膜太陽電池の製造工程の一例の説明図である。FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin film solar cell shown in FIG. 79. 図７９に示す有機薄膜太陽電池の製造工程の一例の説明図である。FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin film solar cell shown in FIG. 79. 図７９に示す有機薄膜太陽電池の製造工程の一例の説明図である。FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin film solar cell shown in FIG. 79. 図７９に示す有機薄膜太陽電池の製造工程の一例の説明図である。FIG. 80 is an explanatory diagram of an example of a manufacturing process of the organic thin film solar cell shown in FIG. 79. 本発明の第９実施形態に係る有機薄膜太陽電池の構造を示し、図６９のＬＸＸ－ＬＸＸ線に沿う拡大断面図に相当する図である。FIG. 70 shows a structure of an organic thin-film solar cell according to a ninth embodiment of the present invention, and is a view corresponding to an enlarged cross-sectional view along the line LXX-LXX in FIG. 69. 図８６に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図８６に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図８６に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図８６に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図８６に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図８６に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図８６に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 本発明の第１０実施形態に係る有機薄膜太陽電池の平面図である。It is a top view of the organic thin-film solar cell concerning 10th Embodiment of this invention. 本発明の第１０実施形態に係る有機薄膜太陽電池の構造を示し、図９５のＸＣＶＩ－ＸＣＶＩ線に沿う拡大断面図である。FIG. 96 is an enlarged cross-sectional view taken along the line XCVI-XCVI in FIG. 95, showing the structure of the organic thin-film solar cell according to the tenth embodiment of the present invention. 図９６に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図９６に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図９６に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図９６に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図９６に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図９６に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 図９６に示す有機薄膜太陽電池の製造工程の一例の説明図である。It is explanatory drawing of an example of the manufacturing process of the organic thin film solar cell shown in FIG. 本発明の第１１、第１２実施形態に係る有機薄膜太陽電池の平面図である。It is a top view of the organic thin film solar cell concerning the 11th and 12th embodiment of the present invention. 本発明の第１１形態に係る有機薄膜太陽電池の構造を示し、図１０４のＣＶ－ＣＶ線に沿う拡大断面図に相当する図である。FIG. 105 is a diagram showing a structure of an organic thin-film solar cell according to an eleventh embodiment of the present invention and corresponding to an enlarged cross-sectional view along the line CV-CV in FIG. 104. 本発明の第１２形態に係る有機薄膜太陽電池の構造を示し、図１０４のＣＶ－ＣＶ線に沿う拡大断面図に相当する図である。FIG. 111 shows a structure of an organic thin-film solar cell according to a twelfth embodiment of the present invention, and is a view corresponding to an enlarged cross-sectional view taken along line CV-CV in FIG. 本発明の有機薄膜太陽電池が用いられる電子機器の他の例を示す平面図である。It is a top view which shows the other example of the electronic device with which the organic thin film solar cell of this invention is used. 図１０７のＣＶＩＩＩ－ＣＶＩＩＩ線に沿う拡大断面図である。It is an expanded sectional view which follows the CVIII-CVIII line of FIG. 図１０７のＣＩＸ－ＣＩＸ線に沿う拡大断面図である。FIG. 108 is an enlarged cross-sectional view taken along line CIX-CIX in FIG. 107. 本発明の有機薄膜太陽電池が用いられる電子機器のさらに他の例を示す平面図である。It is a top view which shows the further another example of the electronic device by which the organic thin-film solar cell of this invention is used. 図１１０の要部拡大図である。It is a principal part enlarged view of FIG. 図１１１のＣＸＩＩ－ＣＸＩＩ線に沿う拡大断面図である。FIG. 112 is an enlarged sectional view taken along line CXII-CXII of FIG. 111. 本発明の第１３および第１４実施形態に基づく有機薄膜太陽電池モジュールおよびこれらを用いた電子機器を示す平面図である。It is a top view which shows the organic thin-film solar cell module based on 13th and 14th Embodiment of this invention, and an electronic device using these. 図１１３の有機薄膜太陽電池モジュールおよび電子機器を示す底面図である。It is a bottom view which shows the organic thin film solar cell module and electronic device of FIG. 図１１３のＣＸＶ－ＣＸＶ線に沿う模式的な断面図である。FIG. 114 is a schematic cross-sectional view taken along line CXV-CXV in FIG. 113. 図１１３のＣＸＶＩ－ＣＸＶＩ線に沿う要部拡大断面図である。It is a principal part expanded sectional view which follows the CXVI-CXVI line | wire of FIG. 図１１３の電子機器を示すシステム構成図である。FIG. 114 is a system configuration diagram showing the electronic device of FIG. 113. 本発明の第１３実施形態に基づく有機薄膜太陽電池モジュールを示す要部分解斜視図である。It is a principal part disassembled perspective view which shows the organic thin-film solar cell module based on 13th Embodiment of this invention. 本発明の第１３実施形態に基づく有機薄膜太陽電池モジュールの第１導電層を示す平面図である。It is a top view which shows the 1st conductive layer of the organic thin-film solar cell module based on 13th Embodiment of this invention. 本発明の第１３実施形態に基づく有機薄膜太陽電池モジュールの光電変換層を示す平面図である。It is a top view which shows the photoelectric converting layer of the organic thin film solar cell module based on 13th Embodiment of this invention. 本発明の第１３実施形態に基づく有機薄膜太陽電池モジュールの第２導電層を示す平面図である。It is a top view which shows the 2nd conductive layer of the organic thin-film solar cell module based on 13th Embodiment of this invention. 本発明の第１３実施形態に基づく有機薄膜太陽電池モジュールの保護樹脂層およびバイパス導電部を示す平面図である。It is a top view which shows the protective resin layer and bypass conductive part of an organic thin-film solar cell module based on 13th Embodiment of this invention. 本発明の第１４実施形態に基づく有機薄膜太陽電池モジュールの第１導電層を示す平面図である。It is a top view which shows the 1st conductive layer of the organic thin-film solar cell module based on 14th Embodiment of this invention. 本発明の第１４実施形態に基づく有機薄膜太陽電池モジュールの光電変換層を示す平面図である。It is a top view which shows the photoelectric converting layer of the organic thin-film solar cell module based on 14th Embodiment of this invention. 本発明の第１４実施形態に基づく有機薄膜太陽電池モジュールの第２導電層を示す平面図である。It is a top view which shows the 2nd conductive layer of the organic thin-film solar cell module based on 14th Embodiment of this invention. 本発明の第１４実施形態に基づく有機薄膜太陽電池モジュールの保護樹脂層およびバイパス導電部を示す平面図である。It is a top view which shows the protective resin layer and bypass conductive part of the organic thin-film solar cell module based on 14th Embodiment of this invention. 本発明の第１３実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 13th Embodiment of this invention. 本発明の第１３実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 13th Embodiment of this invention. 本発明の第１３実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 13th Embodiment of this invention. 本発明の第１３実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 13th Embodiment of this invention. 本発明の第１３実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 13th Embodiment of this invention. 本発明の第１３実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 13th Embodiment of this invention. 本発明の第１３実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 13th Embodiment of this invention. 本発明の第１３実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 13th Embodiment of this invention. 本発明の第１３実施形態に基づく有機薄膜太陽電池モジュールの変形例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the modification of the organic thin-film solar cell module based on 13th Embodiment of this invention. 本発明の第１３実施形態に基づく有機薄膜太陽電池モジュールの他の変形例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the other modification of the organic thin-film solar cell module based on 13th Embodiment of this invention. 本発明の第１５実施形態に基づく有機薄膜太陽電池モジュールを示す要部拡大断面図である。It is a principal part expanded sectional view which shows the organic thin-film solar cell module based on 15th Embodiment of this invention. 本発明の第１５実施形態に基づく有機薄膜太陽電池モジュールを示す要部平面図である。It is a principal part top view which shows the organic thin film solar cell module based on 15th Embodiment of this invention. 本発明の第１５実施形態に基づく有機薄膜太陽電池モジュールを示す要部拡大平面図である。It is a principal part enlarged plan view which shows the organic thin-film solar cell module based on 15th Embodiment of this invention. 本発明の第１５実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 15th Embodiment of this invention. 本発明の第１５実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 15th Embodiment of this invention. 本発明の第１５実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 15th Embodiment of this invention. 本発明の第１５実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 15th Embodiment of this invention. 本発明の第１５実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 15th Embodiment of this invention. 本発明の第１５実施形態に基づく有機薄膜太陽電池モジュールの変形例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the modification of the organic thin-film solar cell module based on 15th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールおよびこれらを用いた電子機器を示す平面図である。It is a top view which shows the organic thin-film solar cell module based on 16th Embodiment of this invention, and an electronic device using these. 図１４６のＣＸＬＶＩＩ－ＣＸＬＶＩＩ線に沿う模式的な断面図である。FIG. 147 is a schematic cross-sectional view taken along line CXLVII-CXLVII in FIG. 146. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュール示す要部拡大底面図である。It is a principal part enlarged bottom view which shows the organic thin-film solar cell module based on 16th Embodiment of this invention. 図１４８のＣＸＬＩＸ－ＣＸＬＩＸ線に沿う要部拡大断面図である。FIG. 148 is an essential part enlarged cross-sectional view along the line CXLIX-CXLIX of FIG. 148; 図１４８のＣＬ－ＣＬ線に沿う要部拡大断面図である。FIG. 149 is an essential part enlarged cross-sectional view along the line CL-CL in FIG. 148; 図１４６の電子機器を示すシステム構成図である。FIG. 147 is a system configuration diagram showing the electronic device of FIG. 146. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールを示す要部分解斜視図である。It is a principal part exploded perspective view which shows the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの第１導電層を示す平面図である。It is a top view which shows the 1st conductive layer of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの光電変換層を示す平面図である。It is a top view which shows the photoelectric converting layer of the organic thin film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの第２導電層を示す平面図である。It is a top view which shows the 2nd conductive layer of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの保護樹脂層およびバイパス導電部を示す底面図である。It is a bottom view which shows the protective resin layer and bypass conductive part of an organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの保護樹脂層およびバイパス導電部を示す平面図である。It is a top view which shows the protective resin layer and bypass conductive part of an organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大底面図である。It is a principal part expanded bottom view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大底面図である。It is a principal part expanded bottom view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大底面図である。It is a principal part expanded bottom view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールの変形例を示す要部拡大平面図である。It is a principal part enlarged plan view which shows the modification of the organic thin-film solar cell module based on 16th Embodiment of this invention. 本発明の第１７実施形態に基づく有機薄膜太陽電池モジュールを示す要部拡大平面図である。It is a principal part enlarged plan view which shows the organic thin-film solar cell module based on 17th Embodiment of this invention. 図１７２のＣＬＸＸＩＩＩ－ＣＬＸＸＩＩＩ線に沿う要部拡大断面図である。FIG. 173 is an enlarged cross-sectional view of a main part along the line CLXXIII-CLXXIII in FIG. 172; 図１７２のＣＬＸＸＩＶ－ＣＬＸＸＩＶ線に沿う要部拡大断面図である。FIG. 172 is an essential part enlarged cross-sectional view along the line CLXXIV-CLXXIV of FIG. 172; 本発明の第１７実施形態に基づく有機薄膜太陽電池モジュールを示す要部拡大平面図である。It is a principal part enlarged plan view which shows the organic thin-film solar cell module based on 17th Embodiment of this invention. 本発明の第１７実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大底面図である。It is a principal part expanded bottom view which shows the manufacturing method of the organic thin-film solar cell module based on 17th Embodiment of this invention. 本発明の第１７実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大底面図である。It is a principal part expanded bottom view which shows the manufacturing method of the organic thin-film solar cell module based on 17th Embodiment of this invention. 本発明の第１７実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 17th Embodiment of this invention. 本発明の第１７実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 17th Embodiment of this invention. 本発明の第１７実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 17th Embodiment of this invention. 本発明の第１７実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 17th Embodiment of this invention. 本発明の第１７実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 17th Embodiment of this invention. 本発明の第１８実施形態に基づく有機薄膜太陽電池モジュールを示す要部拡大底面図である。It is a principal part enlarged bottom view which shows the organic thin-film solar cell module based on 18th Embodiment of this invention. 本発明の第１９および第２０実施形態に基づく有機薄膜太陽電池モジュールおよびこれらを用いた電子機器を示す平面図である。It is a top view which shows the organic thin-film solar cell module based on 19th and 20th Embodiment of this invention, and an electronic device using these. 図１８４の有機薄膜太陽電池モジュールおよび電子機器を示す底面図である。187 is a bottom view showing the organic thin-film solar cell module and electronic device of FIG. 184. FIG. 図１８４のＣＬＸＸＸＶＩ－ＣＬＸＸＸＶＩ線に沿う模式的な断面図である。FIG. 184 is a schematic cross-sectional view taken along the line CLXXXVI-CLXXXVI in FIG. 184. 図１８４のＣＬＸＸＸＶＩＩ－ＣＬＸＸＸＶＩＩ線に沿う要部拡大断面図である。FIG. 184 is an enlarged cross-sectional view of a main part along the line CLXXXVII-CLXXXVII in FIG. 184. 図１８４の電子機器を示すシステム構成図である。FIG. 184 is a system configuration diagram showing the electronic apparatus of FIG. 184. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールを示す要部分解斜視図である。It is a principal part disassembled perspective view which shows the organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの第１導電層を示す平面図である。It is a top view which shows the 1st conductive layer of the organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの光電変換層を示す平面図である。It is a top view which shows the photoelectric converting layer of the organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの第２導電層を示す平面図である。It is a top view which shows the 2nd conductive layer of the organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの保護樹脂層およびバイパス導電部を示す平面図である。It is a top view which shows the protective resin layer and bypass conductive part of an organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの保護樹脂層およびバイパス導電部を示す平面図である。It is a top view which shows the protective resin layer and bypass conductive part of an organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第２０実施形態に基づく有機薄膜太陽電池モジュールの第１導電層を示す平面図である。It is a top view which shows the 1st conductive layer of the organic thin-film solar cell module based on 20th Embodiment of this invention. 本発明の第２０実施形態に基づく有機薄膜太陽電池モジュールの光電変換層を示す平面図である。It is a top view which shows the photoelectric converting layer of the organic thin film solar cell module based on 20th Embodiment of this invention. 本発明の第２０実施形態に基づく有機薄膜太陽電池モジュールの第２導電層を示す平面図である。It is a top view which shows the 2nd conductive layer of the organic thin-film solar cell module based on 20th Embodiment of this invention. 本発明の第２０実施形態に基づく有機薄膜太陽電池モジュールの保護樹脂層およびバイパス導電部を示す平面図である。It is a top view which shows the protective resin layer and bypass conductive part of an organic thin-film solar cell module based on 20th Embodiment of this invention. 本発明の第２０実施形態に基づく有機薄膜太陽電池モジュールの保護樹脂層およびバイパス導電部を示す平面図である。It is a top view which shows the protective resin layer and bypass conductive part of an organic thin-film solar cell module based on 20th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの変形例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the modification of the organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの他の変形例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the other modification of the organic thin-film solar cell module based on 19th Embodiment of this invention. 本発明の第１９実施形態に基づく有機薄膜太陽電池モジュールの他の変形例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the other modification of the organic thin-film solar cell module based on 19th Embodiment of this invention. 図２１０に示す変形例の第１導電層を示す平面図である。It is a top view which shows the 1st conductive layer of the modification shown in FIG. 本発明の第２１実施形態に基づく有機薄膜太陽電池モジュールを示す要部拡大断面図である。It is a principal part expanded sectional view which shows the organic thin film solar cell module based on 21st Embodiment of this invention. 本発明の第２１実施形態に基づく有機薄膜太陽電池モジュールを示す要部拡大平面図である。It is a principal part enlarged plan view which shows the organic thin film solar cell module based on 21st Embodiment of this invention. 本発明の第２１実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 21st Embodiment of this invention. 本発明の第２１実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 21st Embodiment of this invention. 本発明の第２１実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 21st Embodiment of this invention. 本発明の第２１実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 21st Embodiment of this invention. 本発明の第２１実施形態に基づく有機薄膜太陽電池モジュールの製造方法を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the manufacturing method of the organic thin-film solar cell module based on 21st Embodiment of this invention. 本発明の第２１実施形態に基づく有機薄膜太陽電池モジュールの変形例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the modification of the organic thin-film solar cell module based on 21st Embodiment of this invention. 本発明の第２２実施形態に基づく有機薄膜太陽電池モジュールを示す要部平面図である。It is a principal part top view which shows the organic thin film solar cell module based on 22nd Embodiment of this invention. 図２２０のＣＣＸＸＩ－ＣＣＸＸＩ線に沿う断面図である。FIG. 23 is a cross-sectional view taken along line CCXXI-CCXXI in FIG. 220. 本発明の第２２実施形態に基づく有機薄膜太陽電池モジュールを示す要部拡大平面図である。It is a principal part enlarged plan view which shows the organic thin-film solar cell module based on 22nd Embodiment of this invention. 図２２２のＣＣＸＸＩＩＩ－ＣＣＸＸＩＩＩ線に沿う要部拡大断面図である。FIG. 23 is an enlarged cross-sectional view of a main part along the line CCXXIII-CCXXIII in FIG. 222. 図２２２のＣＣＸＸＩＶ－ＣＣＸＸＩＶ線に沿う要部拡大断面図である。FIG. 23 is an essential part enlarged cross-sectional view along the line CCXXIV-CCXXIV in FIG. 222. 本発明の第２２実施形態に基づく有機薄膜太陽電池モジュールを示す要部拡大平面図である。It is a principal part enlarged plan view which shows the organic thin-film solar cell module based on 22nd Embodiment of this invention. 図２２５のＣＣＸＸＶＩ－ＣＣＸＸＶＩ線に沿う要部拡大断面図である。228 is an enlarged cross-sectional view of a main part taken along the line CCXXVI-CCXXVI in FIG. 225. FIG. 本発明の第２２実施形態に基づく有機薄膜太陽電池モジュールおよび電子機器を示すシステム構成図である。It is a system block diagram which shows the organic thin-film solar cell module and electronic device based on 22nd Embodiment of this invention. 本発明の第２２実施形態に基づく有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大平面図である。It is a principal part enlarged plan view which shows an example of the manufacturing method of the organic thin film solar cell module based on 22nd Embodiment of this invention. 本発明の第２２実施形態に基づく有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows an example of the manufacturing method of the organic thin-film solar cell module based on 22nd Embodiment of this invention. 本発明の第２２実施形態に基づく有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大平面図である。It is a principal part enlarged plan view which shows an example of the manufacturing method of the organic thin film solar cell module based on 22nd Embodiment of this invention. 本発明の第２２実施形態に基づく有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows an example of the manufacturing method of the organic thin-film solar cell module based on 22nd Embodiment of this invention. 本発明の第２２実施形態に基づく有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大平面図である。It is a principal part enlarged plan view which shows an example of the manufacturing method of the organic thin film solar cell module based on 22nd Embodiment of this invention. 本発明の第２２実施形態に基づく有機薄膜太陽電池モジュールの製造方法の一例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows an example of the manufacturing method of the organic thin-film solar cell module based on 22nd Embodiment of this invention. 本発明の第２２実施形態に基づく有機薄膜太陽電池モジュールの変形例を示す要部拡大平面図である。It is a principal part enlarged plan view which shows the modification of the organic thin-film solar cell module based on 22nd Embodiment of this invention. 図２３４のＣＣＸＸＸＶ－ＣＣＸＸＸＶ線に沿う要部拡大断面図である。FIG. 25 is an essential part enlarged cross-sectional view taken along the line CCXXXV-CCXXXV in FIG. 234; 本発明の第２２実施形態に基づく有機薄膜太陽電池モジュールの変形例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the modification of the organic thin-film solar cell module based on 22nd Embodiment of this invention. 本発明の第２３実施形態に基づく有機薄膜太陽電池モジュールを示す要部平面図である。It is a principal part top view which shows the organic thin film solar cell module based on 23rd Embodiment of this invention. 本発明の第２３実施形態に基づく有機薄膜太陽電池モジュールを示す要部拡大平面図である。It is a principal part enlarged plan view which shows the organic thin film solar cell module based on 23rd Embodiment of this invention. 図２３８のＣＣＸＸＸＩＸ－ＣＣＸＸＸＩＸ線に沿う要部拡大断面図である。228 is an enlarged cross-sectional view of main parts along the line CCXXXIX-CCXXXIX in FIG. 238. FIG. 図２３８のＣＣＸＬ－ＣＣＸＬ線に沿う要部拡大断面図である。228 is an enlarged cross-sectional view of a main part along the line CCXL-CCXL in FIG. 238. FIG. 本発明の第２４実施形態に基づく有機薄膜太陽電池モジュールを示す要部拡大平面図である。It is a principal part enlarged plan view which shows the organic thin film solar cell module based on 24th Embodiment of this invention. 本発明の第２５実施形態に基づく有機薄膜太陽電池モジュールを示す要部拡大平面図である。It is a principal part enlarged plan view which shows the organic thin film solar cell module based on 25th Embodiment of this invention. 本発明の第２６実施形態に基づく有機薄膜太陽電池モジュールおよび電子機器を示す要部平面図である。It is a principal part top view which shows the organic thin film solar cell module and electronic device based on 26th Embodiment of this invention. 本発明の第２７実施形態に基づく有機薄膜太陽電池モジュールおよび電子機器を示す要部平面図である。It is a principal part top view which shows the organic thin film solar cell module and electronic device based on 27th Embodiment of this invention.
　以下、本発明の好ましい実施の形態につき、図面を参照して具体的に説明する。 Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.
［第１実施形態］
　第１実施形態および図１～図１７における符号は、これらの実施形態および図において有効であり、他の実施形態および図における符号とは独立している。ただし、第１実施形態の具体的構成と他の実施形態の具体的構成とは、相互に適宜組合せ可能である。 [First Embodiment]
The reference numerals in the first embodiment and FIGS. 1 to 17 are valid in these embodiments and drawings, and are independent of the reference numerals in the other embodiments and drawings. However, the specific configuration of the first embodiment and the specific configurations of the other embodiments can be appropriately combined with each other.
　本発明において、「透明」とは、透過率が約５０％以上であるものと定義する。また「透明」とは、可視光線に対して、無色透明という意味でも使用する。可視光線は波長約３６０ｎｍ～８３０ｎｍ程度、エネルギー約３．４５ｅＶ～１．４９ｅＶ程度に相当し、この領域で透過率が５０％以上あれば透明である。 In the present invention, “transparent” is defined as having a transmittance of about 50% or more. “Transparent” is also used to mean colorless and transparent to visible light. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.
　図１～図７は、本発明の第１実施形態に基づく有機薄膜太陽電池モジュール示している。図８は、本発明の第１実施形態に基づく電子機器を示している。 1 to 7 show an organic thin film solar cell module according to the first embodiment of the present invention. FIG. 8 shows an electronic apparatus based on the first embodiment of the present invention.
　図１は、有機薄膜太陽電池モジュールＡ１を示す要部平面図である。図２は、図１のＩＩ－ＩＩ線に沿う断面図である。図３は、有機薄膜太陽電池モジュールＡ１を示す要部拡大平面図である。図４は、図３のＩＶ－ＩＶ線に沿う要部拡大断面図である。図５は、図３のＶ－Ｖ線に沿う要部拡大断面図である。図６は、有機薄膜太陽電池モジュールＡ１を示す要部拡大平面図である。図７は、図６のＶＩＩ－ＶＩＩ線に沿う要部拡大断面図である。図８は、有機薄膜太陽電池モジュールＡ１および電子機器Ｂ１を示すシステム構成図である。なお、以降の説明において、「ｚ方向視」は、平面視を意味し、「ｚ方向」は支持基板４１等の厚さ方向を意味する。 FIG. 1 is a plan view of an essential part showing an organic thin film solar cell module A1. FIG. 2 is a sectional view taken along line II-II in FIG. FIG. 3 is a main part enlarged plan view showing the organic thin film solar cell module A1. 4 is an enlarged cross-sectional view of a main part taken along line IV-IV in FIG. FIG. 5 is an enlarged cross-sectional view of a main part taken along line VV in FIG. FIG. 6 is an enlarged plan view of a main part showing the organic thin film solar cell module A1. FIG. 7 is an enlarged cross-sectional view of a main part taken along line VII-VII in FIG. FIG. 8 is a system configuration diagram showing the organic thin film solar cell module A1 and the electronic device B1. In the following description, “view in the z direction” means a plan view, and “z direction” means a thickness direction of the support substrate 41 and the like.
　図８に示すように、電子機器Ｂ１は、有機薄膜太陽電池モジュールＡ１および駆動部７１を備える。有機薄膜太陽電池モジュールＡ１は、電子機器Ｂ１における電源モジュールであり、太陽光などの光を電力に変換する。 As shown in FIG. 8, the electronic device B1 includes an organic thin-film solar cell module A1 and a drive unit 71. The organic thin film solar cell module A1 is a power supply module in the electronic device B1, and converts light such as sunlight into electric power.
　駆動部７１は、有機薄膜太陽電池モジュールＡ１からの給電によって駆動するものである。駆動部７１の具体的な構成や機能は特に限定されず、電子機器Ｂ１の機能を実現しうる様々な構成が採用され得る。駆動部７１の一例を挙げると、電子計算機器としての電子機器Ｂ１を実現する電子計算処理部、無線通信モジュールとしての電子機器Ｂ１を実現する無線通信部、腕時計としての電子機器Ｂ１を実現しうる計時処理部、携帯型電子端末機器としての電子機器Ｂ１を実現しうる入出力演算処理部、等が挙げられる。 The driving unit 71 is driven by power feeding from the organic thin film solar cell module A1. The specific configuration and function of the drive unit 71 are not particularly limited, and various configurations that can realize the function of the electronic device B1 can be employed. As an example of the drive unit 71, an electronic calculation processing unit that realizes an electronic device B1 as an electronic calculation device, a wireless communication unit that realizes an electronic device B1 as a wireless communication module, and an electronic device B1 as a wristwatch can be realized. Examples thereof include a timekeeping processing unit, an input / output arithmetic processing unit capable of realizing the electronic device B1 as a portable electronic terminal device, and the like.
　有機薄膜太陽電池モジュールＡ１は、支持基板４１、第１導電層１、第２導電層２、光電変換層３およびパッシベーション層４２を備える。本実施形態においては、有機薄膜太陽電池モジュールＡ１は、ｚ方向視矩形状とされているが、これは有機薄膜太陽電池モジュールＡ１の形状の一例であり、様々な形状に設定されうる。図１、図３および図６においては、理解の便宜上、パッシベーション層４２を省略している。 The organic thin film solar cell module A1 includes a support substrate 41, a first conductive layer 1, a second conductive layer 2, a photoelectric conversion layer 3, and a passivation layer. In the present embodiment, the organic thin film solar cell module A1 has a rectangular shape as viewed in the z direction, but this is an example of the shape of the organic thin film solar cell module A1, and can be set in various shapes. In FIG. 1, FIG. 3 and FIG. 6, the passivation layer 42 is omitted for convenience of understanding.
　支持基板４１は、有機薄膜太陽電池モジュールＡ１の土台となるものである。支持基板４１は、たとえば透明なガラスあるいは樹脂等から適宜選択される材質からなる、単層もしくは複数層を有する。支持基板４１の厚さは、たとえば０．０５ｍｍ～２．０ｍｍである。支持基板４１の形状や大きさは特に限定されず、本実施形態においては、ｚ方向視矩形状とされている。 The support substrate 41 is a base of the organic thin film solar cell module A1. The support substrate 41 has a single layer or a plurality of layers made of a material appropriately selected from, for example, transparent glass or resin. The thickness of the support substrate 41 is, for example, 0.05 mm to 2.0 mm. The shape and size of the support substrate 41 are not particularly limited, and in the present embodiment, the support substrate 41 has a rectangular shape as viewed in the z direction.
　有機薄膜太陽電池モジュールＡ１には、図１および図３に示すように、複数の基板露出領域４１０および基板露出領域４１２が形成され、図１に示すように基板露出領域４１１が形成されている。複数の基板露出領域４１０、基板露出領域４１１および基板露出領域４１２は、支持基板４１のうち第１導電層１から露出した領域である。 In the organic thin-film solar cell module A1, as shown in FIGS. 1 and 3, a plurality of substrate exposed regions 410 and substrate exposed regions 412 are formed, and a substrate exposed region 411 is formed as shown in FIG. The plurality of substrate exposed regions 410, substrate exposed regions 411, and substrate exposed regions 412 are regions exposed from the first conductive layer 1 in the support substrate 41.
　第１導電層１は、支持基板４１上に形成されている。第１導電層１は、透明であり、本実施形態においてはＩＴＯからなる。第１導電層１は、複数の第１区画部１１および第３区画部１５を有する。第１導電層１の形状は、様々な形状に設定されうる。第１導電層１の厚さは、たとえば１００ｎｍ～３００ｎｍである。 The first conductive layer 1 is formed on the support substrate 41. The first conductive layer 1 is transparent and is made of ITO in this embodiment. The first conductive layer 1 has a plurality of first partition portions 11 and third partition portions 15. The shape of the first conductive layer 1 can be set to various shapes. The thickness of the first conductive layer 1 is, for example, 100 nm to 300 nm.
　複数の第１区画部１１は、基板露出領域４１０を介して隣り合っている。本実施形態においては、４つの第１区画部１１が３つの基板露出領域４１０を介して隣り合っている。また、４つの第１区画部１１は、ｘ方向に沿って一直線上に配列されている。なお、以下においては、４つの第１区画部１１を、理解の便宜上、第１区画部１１－１、第１区画部１１－２、第１区画部１１－３および第１区画部１１－４と必要に応じて区別して説明する。 The plurality of first partition portions 11 are adjacent to each other through the substrate exposed region 410. In the present embodiment, the four first partition portions 11 are adjacent to each other through the three substrate exposed regions 410. Moreover, the four 1st division parts 11 are arranged on the straight line along the x direction. In the following description, for convenience of understanding, the four first partition portions 11 are divided into a first partition portion 11-1, a first partition portion 11-2, a first partition portion 11-3, and a first partition portion 11-4. And will be described separately as necessary.
　第１区画部１１は、第１区画部第１端縁１１０、第１区画部第２端縁１２０および２つの第１区画部第３端縁１３０を有する。 The first partition part 11 has a first partition part first edge 110, a first partition part second edge 120, and two first partition part third edges 130.
　第１区画部第１端縁１１０は、基板露出領域４１０の一部を区画する端縁である。第１区画部第２端縁１２０は、基板露出領域４１０の一部を区画する端縁である。すなわち、基板露出領域４１０は、一方の第１区画部１１（図中ｘ方向右側、図３における第１区画部１１－２）の第１区画部第１端縁１１０と他方の第１区画部１１（図中ｘ方向左側、図３における第１区画部１１－３）の第１区画部第２端縁１２０とによって既定されている。 The first partition 110 first edge 110 is an edge that partitions a part of the substrate exposed region 410. The first partition portion second edge 120 is an edge that partitions a part of the substrate exposed region 410. That is, the substrate exposed region 410 includes the first partition portion first edge 110 and the other first partition portion of one of the first partition portions 11 (right side in the x direction in the drawing, first partition portion 11-2 in FIG. 3). 11 (the left side in the x direction in the drawing, the first partition portion 11-3 in FIG. 3) and the second edge 120 of the first partition portion.
　本実施形態においては、第１区画部１１－１～３の第１区画部第１端縁１１０は、第１辺１１１を有し、第１区画部１１－２～４の第１区画部第２端縁１２０は、第２辺１２１を有する。同一の基板露出領域４１０を区画する第１辺１１１（図３における第１区画部１１－２の第１辺１１１）と第２辺１２１（図３における第１区画部１１－３の第２辺１２１）とは、互いに平行である。また、本実施形態においては、第１辺１１１と第２辺１２１とは、いずれもｙ方向に沿う直線状である。これに対応して、本実施形態においては、基板露出領域４１０のうち第１辺１１１および第２辺１２１に規定されている部分は、ｙ方向に沿う直線状である。 In the present embodiment, the first partition portion first edge 110 of the first partition portions 11-1 to 11-3 has the first side 111, and the first partition portion 11-2 to the first partition portion 11-2 to the first partition portion 11-4. The two end edges 120 have a second side 121. The first side 111 (the first side 111 of the first partition unit 11-2 in FIG. 3) and the second side 121 (the second side of the first partition unit 11-3 in FIG. 3) that partition the same substrate exposed region 410 121) are parallel to each other. In the present embodiment, the first side 111 and the second side 121 are both linear along the y direction. Correspondingly, in the present embodiment, portions of the substrate exposure region 410 that are defined by the first side 111 and the second side 121 are linear along the y direction.
　２つの第１区画部第３端縁１３０は、第１区画部第１端縁１１０の両端と第１区画部第２端縁１２０の両端とをそれぞれ繋いでいる。本実施形態においては、第１区画部第３端縁１３０は、ｘ方向に沿う直線状である。第１区画部第３端縁１３０は、基板露出領域４１２の一部を規定している。本実施形態の１１は、第１区画部第１端縁１１０の第１辺１１１、第１区画部第２端縁１２０の第２辺１２１および２つの第１区画部第３端縁１３０によって構成されたｘ方向視略矩形状とされている。 The two first partition portion third end edges 130 connect both ends of the first partition portion first end edge 110 and both ends of the first partition portion second end edge 120, respectively. In the present embodiment, the first partition portion third edge 130 is linear along the x direction. The first partition portion third edge 130 defines a part of the substrate exposed region 412. 11 of this embodiment is constituted by the first side 111 of the first partition part first edge 110, the second side 121 of the first partition part second edge 120, and the two first partition part third edges 130. It is made into the substantially rectangular shape by the x direction view made.
　図１および図６に示すように、図中ｘ方向において最も右側に位置する第１区画部１１－１と第３区画部１５とは、基板露出領域４１１を介して隣り合っている。第３区画部１５は、第３区画部端縁１６０を有する。第３区画部１５の第３区画部端縁１６０と第３区画部１５に隣り合う第１区画部１１－１の第１区画部第２端縁１２０とによって、基板露出領域４１１が規定されている。第３区画部端縁１６０は、第３区画部平行部１６１を有する。第３区画部平行部１６１は、第１区画部１１－１の第２辺１２１と平行な部分である。本実施形態においては、第３区画部平行部１６１は、ｙ方向に沿う直線状である。 As shown in FIGS. 1 and 6, the first partition portion 11-1 and the third partition portion 15 located on the rightmost side in the x direction in the drawing are adjacent to each other with the substrate exposed region 411 interposed therebetween. The third partition part 15 has a third partition part edge 160. The substrate exposed region 411 is defined by the third partition portion edge 160 of the third partition portion 15 and the first partition portion second edge 120 of the first partition portion 11-1 adjacent to the third partition portion 15. Yes. The third partition part edge 160 has a third partition part parallel part 161. The third partition parallel part 161 is a part parallel to the second side 121 of the first partition 11-1. In this embodiment, the 3rd division part parallel part 161 is linear form along ay direction.
　光電変換層３は、支持基板４１および第１導電層１上に積層されており、第１導電層１と第２導電層２とに挟まれている。光電変換層３は、有機薄膜からなる層であり、受けた光を電力に変換する光電変換機能を発揮する。光電変換層３の具体的構成は特に限定されないが、その一例を挙げると、バルクヘテロ接合有機活性層と、このバルクヘテロ接合有機活性層に対して第１導電層１側に積層された正孔輸送層とからなる。本実施形態においては、光電変換層３は、平面視円形状とされているが、これは一例であり、光電変換層３は、様々な形状とされうる。光電変換層３の厚さは、たとえば５０ｎｍ～３００ｎｍである。 The photoelectric conversion layer 3 is laminated on the support substrate 41 and the first conductive layer 1, and is sandwiched between the first conductive layer 1 and the second conductive layer 2. The photoelectric conversion layer 3 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power. The specific configuration of the photoelectric conversion layer 3 is not particularly limited. For example, a bulk heterojunction organic active layer and a hole transport layer stacked on the first conductive layer 1 side with respect to the bulk heterojunction organic active layer are given. It consists of. In the present embodiment, the photoelectric conversion layer 3 has a circular shape in plan view, but this is an example, and the photoelectric conversion layer 3 can have various shapes. The thickness of the photoelectric conversion layer 3 is, for example, 50 nm to 300 nm.
　バルクヘテロ接合有機活性層は、ｐ型有機活性層領域とｎ型有機活性層領域が混在し、複雑なバルクへテロｐｎ接合を形成している。ｐ型有機活性層領域は、例えば、Ｐ３ＨＴ（poly(3-hexylthiophene-2,5diyl)）で形成され、ｎ型有機活性層領域は、例えば、ＰＣＢＭ（6,6-phenyl-C61-butyric acid methyl ester）で形成されている。正孔輸送層は、たとえばＰＥＤＯＴ：ＰＳＳで形成されている。 In the bulk heterojunction organic active layer, a p-type organic active layer region and an n-type organic active layer region are mixed to form a complex bulk hetero pn junction. The p-type organic active layer region is formed of, for example, P3HT (poly (3-hexylthiophene-2,5diyl)), and the n-type organic active layer region is, for example, PCBM (6,6-phenyl-C61-butyric acid methyl). ester). The hole transport layer is made of, for example, PEDOT: PSS.
　光電変換層３の形成に用いられる材質を例示すると、フタロシアニン（Ｐｃ:Phthalocyanine）、亜鉛フタロシアニン（ＺｎＰｃ:Zinc- phthalocyanine）、Ｍｅ－Ｐｔｃｄｉ（N,N’-dimethyl perylene-3,4,9,10-dicarboximide）、フラーレン（C 60 :Buckminster fullerene）が挙げられる。これらの材質は、たとえば真空蒸着に使用される。 Examples of materials used to form the photoelectric conversion layer 3 include phthalocyanine (Pc: Phthhalocyanine), zinc phthalocyanine (ZnPc: Zinc- phthalocyanine), Me-Ptcdi (N, N'-dimethyl perylene-3,4,9,10). -dicarboximide) and fullerene (C 60: Buckminster fullerene). These materials are used for vacuum deposition, for example.
　また、光電変換層３の形成に用いられる他の材質を例示すると、ＭＤＭＯ－ＰＰＶ（poly[2-methoxy-5-(3,7-dimethyl octyloxy)]-1,4-phenylene vinylene）、ＰＣＤＴＢＴ（poly[N-9’-hepta-decanyl-2,7-carbazole-alt-5,5-(4’,7’-di-thienyl-2’1’,3’-b3nzothiadizaole)]）、ＰＣ６０ＢＭ（6,6-phenyl-C61-butyric acid methyl ester）、ＰＣ７０ＢＭ（6,6-phenyl-C71-butyric acid methyl ester）が挙げられる。これらの材質は、たとえば溶液プロセスに使用される。 Other materials used for forming the photoelectric conversion layer 3 are exemplified by MDMO-PPV (poly [2-methoxy-5- (3,7-dimethyl-octyloxy)]-1,4-phenylene-vinylene), PCDTBT ( poly [N-9'-hepta-decanyl-2,7-carbazole-alt-5,5- (4 ', 7'-di-thienyl-2'1', 3'-b3nzothiadizaole)]), PC60BM (6 , 6-phenyl-C61-butyric acid methyl ester) and PC70BM (6,6-phenyl-C71-butyric acid methyl ester). These materials are used, for example, in solution processes.
　第２導電層２は、その大部分が光電変換層３を介して第１導電層１上に積層されている。また、第２導電層２の一部は、第１導電層１に直接接している。第２導電層２の材質は特に限定されず、透明であっても不透明であってもよいが、本実施形態においては、第２導電層２は、Ａｌ、Ｗ、Ｍｏ、Ｍｎ、Ｍｇに代表される金属からなる。以下においては、第２導電層２がＡｌからなる場合を例に説明する。したがって、第２導電層２は、不透明である。またこの場合、第２導電層２の支持基板４１とは反対側の表面に、Ａｌ２Ｏ３からなる不動態皮膜（図示略）が形成されてもよい。第２導電層２の厚さは、光電変換層３の厚さよりも厚く、たとえば１μｍ～５μｍである。 Most of the second conductive layer 2 is laminated on the first conductive layer 1 via the photoelectric conversion layer 3. A part of the second conductive layer 2 is in direct contact with the first conductive layer 1. The material of the second conductive layer 2 is not particularly limited and may be transparent or opaque, but in the present embodiment, the second conductive layer 2 is represented by Al, W, Mo, Mn, and Mg. Made of metal. Hereinafter, a case where the second conductive layer 2 is made of Al will be described as an example. Therefore, the second conductive layer 2 is opaque. In this case, a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second conductive layer 2 opposite to the support substrate 41. The thickness of the second conductive layer 2 is thicker than the thickness of the photoelectric conversion layer 3 and is, for example, 1 μm to 5 μm.
　図１に示すように、第２導電層２は、複数の第２区画部２１を有する。複数の第２区画部２１は、基板露出領域４１０の一部ずつを挟んで隣り合っている。本実施形態の場合、より具体的には、隣り合う第２区画部２１は、第１区画部第１端縁１１０の第１辺１１１と第１区画部第２端縁１２０の第２辺１２１とを間に挟んで隣り合っている。本実施形態においては、４つの第２区画部２１が３つの基板露出領域４１０の一部ずつを挟んで隣り合っている。また、４つの第２区画部２１は、ｘ方向に沿って一直線上に配列されている。なお、以下においては、４つの第２区画部２１を、理解の便宜上、第２区画部２１－１、第２区画部２１－２、第２区画部２１－３および第２区画部２１－４と必要に応じて区別して説明する。 As shown in FIG. 1, the second conductive layer 2 has a plurality of second partition portions 21. The plurality of second partition portions 21 are adjacent to each other with a part of the substrate exposed region 410 interposed therebetween. In the case of the present embodiment, more specifically, the adjacent second partition parts 21 include the first side 111 of the first partition part first edge 110 and the second side 121 of the first partition part second edge 120. Next to each other. In the present embodiment, the four second partition portions 21 are adjacent to each other with a part of each of the three substrate exposed regions 410 interposed therebetween. Further, the four second partition portions 21 are arranged on a straight line along the x direction. In the following, for convenience of understanding, the four second partition sections 21 are divided into a second partition section 21-1, a second partition section 21-2, a second partition section 21-3, and a second partition section 21-4. And will be described separately as necessary.
　図１および図３に示すように、第２区画部２１は、ｚ方向視において第１区画部１１と重なっている。第２区画部２１は、第２区画部第１端縁２１０、第２区画部第２端縁２２０および２つの第２区画部第３端縁２３０を有する。 As shown in FIGS. 1 and 3, the second partition portion 21 overlaps the first partition portion 11 when viewed in the z direction. The second partition part 21 has a second partition part first edge 210, a second partition part second edge 220, and two second partition part third edges 230.
　第２区画部２１－１～３（図３における第２区画部２１－２）の第２区画部第１端縁２１０は、基板露出領域４１０を規定する第１区画部１１－１～３（図３における１１－２）の第１区画部第１端縁１１０に対して当該基板露出領域４１０を規定する第１区画部１１－２～４（図３における第１区画部１１－３）の第１区画部第２端縁１２０とは反対側に位置する。第２区画部第２端縁２２０は、ｚ方向視において基板露出領域４１０の一部を挟んで隣り合う第２区画部２１の第２区画部第１端縁２１０と対向している。 The second partition portion first edge 210 of the second partition portions 21-1 to 21-3 (second partition portion 21-2 in FIG. 3) is a first partition portion 11-1 to 3-3 (which defines the substrate exposed region 410). The first partition portions 11-2 to 11-4 (first partition portion 11-3 in FIG. 3) defining the substrate exposed region 410 with respect to the first edge 110 of the first partition portion 11-2) in FIG. It is located on the opposite side to the first partition portion second end edge 120. The second partition portion second edge 220 is opposed to the second partition portion first edge 210 of the second partition portion 21 adjacent to each other with a part of the substrate exposed region 410 interposed therebetween in the z direction.
　本実施形態においては、第２区画部第１端縁２１０（図３における第２区画部２１－２の第２区画部第１端縁２１０）と第２区画部第２端縁２２０（図３における第２区画部２１－３の第２区画部第２端縁２２０）とは、互いに平行である。また、第２区画部第１端縁２１０および第２区画部第２端縁２２０は、ｙ方向に沿う直線状である。すなわち、本実施形態においては、第１辺１１１、第２辺１２１、第２区画部第１端縁２１０および第２区画部第２端縁２２０が、互いに平行であり、ｙ方向に沿う直線状である。 In the present embodiment, the second partition portion first edge 210 (second partition portion first edge 210 of the second partition portion 21-2 in FIG. 3) and the second partition portion second edge 220 (FIG. 3). And the second partition part second end edge 220) of the second partition part 21-3 are parallel to each other. Moreover, the 2nd division part 1st edge 210 and the 2nd division part 2nd edge 220 are linear form along ay direction. That is, in the present embodiment, the first side 111, the second side 121, the second partition part first edge 210, and the second partition part second edge 220 are parallel to each other, and are linear along the y direction. It is.
　２つの第２区画部第３端縁２３０は、第２区画部第１端縁２１０の両端と第２区画部第２端縁２２０の両端とをそれぞれ繋いでいる。２つの第２区画部第３端縁２３０は、互いに平行であり、ｘ方向に沿う直線状である。これらの第２区画部第１端縁２１０、第２区画部第２端縁２２０および２つの第２区画部第３端縁２３０を有する第２区画部２１は、ｚ方向視矩形状である。 The two second partition part third end edges 230 connect both ends of the second partition part first end edge 210 and both ends of the second partition part second end edge 220, respectively. The two second partition portion third end edges 230 are parallel to each other and are linear along the x direction. The second partition portion 21 having the second partition portion first end edge 210, the second partition portion second end edge 220, and the two second partition portion third end edges 230 has a rectangular shape as viewed in the z direction.
　図２、図４、図５および図７に示すように、パッシベーション層４２は、第２導電層２上に積層されており、第２導電層２および光電変換層３を覆っている。パッシベーション層４２は、たとえばＳｉＮまたはＳｉＯＮからなる。パッシベーション層４２の厚さは、たとえば０．５μｍ～２．０μｍであり、本実施形態においては、たとえば１．５μｍ程度とされる。パッシベーション層４２が光電変換層３を覆っていることにより、光電変換層３に外部から水やパーティクル等が進入することを防止できる。また、パッシベーション層４２は、光電変換層３よりも厚く構成されていることにより、有機薄膜太陽電池モジュールＡ１の強度を向上させることができる。なお、上述のような平坦なパッシベーション層４２は、例えばパッシベーション層４２が光電変換層３に対して厚い層とすること、また後述するＣＶＤを用いた手法によって形成されることにより形成することができ、これに限られない。また、パッシベーション層４２上に、さらに他の層が積層された構成であってもよい。たとえば、電子機器Ｂ１の他の構成要素と有機薄膜太陽電池モジュールＡ１とを接合するための接合層が設けられていてもよい。あるいは、パッシベーション層４２を保護する保護層が設けられていてもよい。 As shown in FIGS. 2, 4, 5, and 7, the passivation layer 42 is laminated on the second conductive layer 2 and covers the second conductive layer 2 and the photoelectric conversion layer 3. The passivation layer 42 is made of, for example, SiN or SiON. The thickness of the passivation layer 42 is, for example, 0.5 μm to 2.0 μm. In the present embodiment, the thickness is, for example, about 1.5 μm. Since the passivation layer 42 covers the photoelectric conversion layer 3, it is possible to prevent water, particles, and the like from entering the photoelectric conversion layer 3 from the outside. Moreover, the passivation layer 42 can improve the intensity | strength of organic thin-film solar cell module A1 by being comprised thicker than the photoelectric converting layer 3. FIG. The flat passivation layer 42 as described above can be formed, for example, by making the passivation layer 42 thick with respect to the photoelectric conversion layer 3 or by a method using CVD described later. Not limited to this. In addition, another layer may be stacked on the passivation layer 42. For example, a bonding layer for bonding other components of the electronic device B1 and the organic thin film solar cell module A1 may be provided. Alternatively, a protective layer that protects the passivation layer 42 may be provided.
　図３～図５に示すように、第１区画部１１－１～３（図３における第１区画部１１－２）の第１区画部第１端縁１１０は、第１辺１１１に加えて２つの第１被覆部１１２を有する。第１被覆部１１２は、第１区画部第１端縁１１０のうちｚ方向視において第２区画部２１と重なっており、ｚ方向視において第２区画部２１に被覆されている部分である。本実施形態においては、２つの第１被覆部１１２が、それぞれ第１辺１１１のｙ方向両端部に接続されて設けられている。第１被覆部１１２の形状は特に限定されず、本実施形態においては、第１被覆部１１２は、第１辺１１１に対してｘ方向に突出する形状とされており、第１辺１１２１、第２辺１１２２および第３辺１１２３を有する。第１辺１１２１は、第１区画部第３端縁１３０と平行でありｘ方向に沿う辺である。第２辺１１２２は、第１辺１１２１と交差する方向に沿う辺であり、ｙ方向に沿っている。第３辺１１２３は、第１辺１１２１と第２辺１１２２とを繋ぐ辺であり、図示された例においては、湾曲形状とされている。また、図示された第１被覆部１１２は、一端が第２区画部第２端縁２２０に到達し、他端が第２区画部第３端縁２３０にｚ方向視において交差している。 As shown in FIGS. 3 to 5, the first partition portion first edge 110 of the first partition portions 11-1 to 11-3 (the first partition portion 11-2 in FIG. 3) is added to the first side 111. Two first covering portions 112 are provided. The first covering portion 112 is a portion of the first partition portion first edge 110 that overlaps the second partition portion 21 when viewed in the z direction and is covered with the second partition portion 21 when viewed in the z direction. In the present embodiment, two first covering portions 112 are provided connected to both ends of the first side 111 in the y direction. The shape of the first covering portion 112 is not particularly limited. In the present embodiment, the first covering portion 112 has a shape protruding in the x direction with respect to the first side 111, and the first side 1121, It has two sides 1122 and a third side 1123. The first side 1121 is a side that is parallel to the first partition portion third edge 130 and extends in the x direction. The second side 1122 is a side along the direction intersecting the first side 1121 and is along the y direction. The third side 1123 is a side that connects the first side 1121 and the second side 1122 and has a curved shape in the illustrated example. The illustrated first covering portion 112 has one end reaching the second partition portion second end edge 220 and the other end intersecting the second partition portion third end edge 230 in the z-direction view.
　図３～図５に示すように、第１区画部１１－２～４（図３における第１区画部１１－３）の第１区画部第２端縁１２０は、第２辺１２１に加えて２つの第２被覆部１２２を有する。第２被覆部１２２は、第１区画部第２端縁１２０のうちｚ方向視において第２区画部２１と重なる部分である。本実施形態においては、２つの第２被覆部１２２が、第２辺１２１のｙ方向両端部に接続されて設けられている。第２被覆部１２２の形状は特に限定されず、本実施形態においては、第２被覆部１２２は、第２辺１２１に対してｘ方向に凹んだ形状とされており、第１辺１２２１、第２辺１２２２および第３辺１２２３を有する。第１辺１２２１は、第１区画部第３端縁１３０と平行でありｘ方向に沿う辺である。第２辺１２２２は、第１辺１２２１と交差する方向に沿う辺であり、ｙ方向に沿っている。第３辺１２２３は、第１辺１２２１と第２辺１２２２とを繋ぐ辺であり、図示された例においては、湾曲形状とされている。また、図示された第２被覆部１２２は、一端が第２区画部第２端縁２２０に到達し、他端が第２区画部第３端縁２３０に到達している。 As shown in FIGS. 3 to 5, the first partition portion second edge 120 of the first partition portions 11-2 to 11-2 to 4 (first partition portion 11-3 in FIG. 3) is added to the second side 121. Two second covering portions 122 are provided. The 2nd coating | coated part 122 is a part which overlaps with the 2nd division part 21 in z direction view among the 1st division part 2nd edges 120. As shown in FIG. In the present embodiment, two second covering portions 122 are provided connected to both ends of the second side 121 in the y direction. The shape of the second covering portion 122 is not particularly limited, and in the present embodiment, the second covering portion 122 has a shape that is recessed in the x direction with respect to the second side 121. It has two sides 1222 and a third side 1223. The first side 1221 is a side parallel to the first partition portion third end edge 130 and along the x direction. The second side 1222 is a side along the direction intersecting the first side 1221 and is along the y direction. The third side 1223 is a side that connects the first side 1221 and the second side 1222, and has a curved shape in the illustrated example. The illustrated second covering portion 122 has one end reaching the second partition portion second edge 220 and the other end reaching the second partition portion third edge 230.
　上述した第１被覆部１１２および第２被覆部１２２の形状に対応して、本実施形態の基板露出領域４１０は、ｚ方向視において第２区画部２１と重なっており、交差部４１５および交差部４１６を有する。交差部４１５は、基板露出領域４１０が第２区画部第２端縁２２０と交差する部分である。交差部４１６は、基板露出領域４１０が第２区画部第３端縁２３０と交差する部分である。 Corresponding to the shape of the first covering portion 112 and the second covering portion 122 described above, the substrate exposed region 410 of the present embodiment overlaps the second partition portion 21 when viewed in the z direction, and the intersecting portion 415 and the intersecting portion. 416. The intersecting portion 415 is a portion where the substrate exposed region 410 intersects the second partition portion second edge 220. The intersecting portion 416 is a portion where the substrate exposed region 410 intersects the second partition portion third edge 230.
　図１～図５に示すように、光電変換層３は、複数の光電変換層接続部３３を有する。図３～図５に示すように、光電変換層接続部３３は、ｚ方向視において基板露出領域４１０の一部（図３に示す部位の場合、第１区画部１１－２の第１辺１１１と第１区画部１１－３の第２辺１２１とによって規定された部分）を挟んで隣り合う第１導電層１の第１区画部１１（図３に示す部位の場合、第１区画部１１－２）と第２導電層２の第２区画部２１（図３に示す部位の場合、第２区画部２１－３）の双方と重なる部分であって、当該第１区画部１１の第１被覆部１１２および当該第２区画部２１の第２区画部第２端縁２２０によって区画された部分である。また、本実施形態においては、光電変換層接続部３３は、第２区画部第３端縁２３０（図３に示す部位の場合、第２区画部２１－３の第２区画部第３端縁２３０）によって区画されている。すなわち、本実施形態の光電変換層接続部３３は、ｚ方向視において矩形状とされた第２区画部２１（図３に示す部位の場合、第２区画部２１－３）の角部に重なる位置に設けられている。さらに、本実施形態においては、図１に示すように、１つの第２区画部２１に対して、２つの光電変換層接続部３３が、ｙ方向に離間した２つの角部に重なる位置に設けられている。 As shown in FIGS. 1 to 5, the photoelectric conversion layer 3 has a plurality of photoelectric conversion layer connecting portions 33. As shown in FIGS. 3 to 5, the photoelectric conversion layer connecting portion 33 is a part of the substrate exposed region 410 when viewed in the z direction (in the case of the portion shown in FIG. 3, the first side 111 of the first partitioning portion 11-2). And the first partition portion 11 of the first conductive layer 1 adjacent to each other across the portion defined by the second side 121 of the first partition portion 11-3 (in the case of the portion shown in FIG. 3, the first partition portion 11). -2) and the second partition portion 21 of the second conductive layer 2 (the second partition portion 21-3 in the case of the portion shown in FIG. 3), and the first partition portion 11 This is a portion defined by the covering portion 112 and the second partition portion second edge 220 of the second partition portion 21. Further, in the present embodiment, the photoelectric conversion layer connecting portion 33 has the second partition portion third edge 230 (in the case of the portion shown in FIG. 3, the second partition portion third edge of the second partition portion 21-3). 230). That is, the photoelectric conversion layer connecting portion 33 of the present embodiment overlaps with a corner of the second partition portion 21 (second partition portion 21-3 in the case of the portion shown in FIG. 3) that is rectangular when viewed in the z direction. In the position. Further, in the present embodiment, as shown in FIG. 1, two photoelectric conversion layer connection portions 33 are provided at positions overlapping two corner portions separated in the y direction with respect to one second partition portion 21. It has been.
　光電変換層接続部３３には、光電変換層貫通部３３１が形成されている。光電変換層貫通部３３１は、光電変換層３をｚ方向に貫通する貫通孔によって構成されている。光電変換層貫通部３３１の形状や大きさは特に限定されず、図示された例においては、ｚ方向視円形状とされている。また、この光電変換層貫通部３３１の直径は、たとえば４０μｍ程度である。また、光電変換層接続部３３には、突起３３２が形成されている。突起３３２は、図４に示すように、光電変換層３の周辺部分よりもｚ方向に突出した部位である。図３に示すように、突起３３２は、ｚ方向視において光電変換層貫通部３３１を囲んでいる。 In the photoelectric conversion layer connecting portion 33, a photoelectric conversion layer penetrating portion 331 is formed. The photoelectric conversion layer penetrating part 331 is configured by a through hole that penetrates the photoelectric conversion layer 3 in the z direction. The shape and size of the photoelectric conversion layer penetrating portion 331 are not particularly limited, and in the illustrated example, the photoelectric conversion layer penetrating portion 331 has a circular shape in the z direction. Moreover, the diameter of this photoelectric conversion layer penetration part 331 is about 40 micrometers, for example. In addition, the photoelectric conversion layer connection portion 33 is formed with a protrusion 332. As shown in FIG. 4, the protrusion 332 is a portion protruding in the z direction from the peripheral portion of the photoelectric conversion layer 3. As shown in FIG. 3, the protrusion 332 surrounds the photoelectric conversion layer penetrating portion 331 when viewed in the z direction.
　第１区画部１１－１～３は、第１接続部１３を有する。第１接続部１３は、ｚ方向視において光電変換層接続部３３と一致する部分である。第２区画部２１は、第２接続部２３を有する、第２接続部２３は、ｚ方向視において光電変換層接続部３３と一致する部分である。第１区画部１１－１～３の第１接続部１３と第２区画部２１－２～４第２接続部２３とは、光電変換層貫通部３３１を通じて互いに接触しており、互いに導通している。このため、第１接続部１３、第２接続部２３および光電変換層接続部３３は、発電を行わない部分となっている。 The first partition units 11-1 to 11-3 have a first connection unit 13. The first connection portion 13 is a portion that coincides with the photoelectric conversion layer connection portion 33 when viewed in the z direction. The 2nd division part 21 has the 2nd connection part 23. The 2nd connection part 23 is a part which corresponds with the photoelectric converting layer connection part 33 in z direction view. The first connecting portion 13 of the first partitioning portions 11-1 to 11-3 and the second connecting portions 21-2 to 4-4 are in contact with each other through the photoelectric conversion layer penetrating portion 331 and are electrically connected to each other. Yes. For this reason, the 1st connection part 13, the 2nd connection part 23, and the photoelectric converting layer connection part 33 are parts which do not generate electric power.
　本実施形態においては、第１区画部１１の第１接続部１３に第１貫通部１３１が設けられている。本実施形態においては、第１導電層１をｚ方向に貫通する貫通孔を第１貫通部１３１と称する。第１貫通部１３１は、ｚ方向視において光電変換層貫通部３３１に内包されている。また、第１貫通部１３１の内端縁は、ｚ方向視において光電変換層貫通部３３１の内端縁から離間している。これにより、第１区画部１１の第１接続部１３の一部が、ｚ方向視において光電変換層貫通部３３１から露出している。この露出した部分に第２導電層２の第２区画部２１－２～４の第２接続部２３が接触している。また、第２区画部２１－２～４の第２接続部２３は、第１貫通部１３１を介して支持基板４１に接している。 In the present embodiment, the first penetration part 131 is provided in the first connection part 13 of the first partition part 11. In the present embodiment, a through hole that penetrates the first conductive layer 1 in the z direction is referred to as a first through portion 131. The first penetration part 131 is included in the photoelectric conversion layer penetration part 331 when viewed in the z direction. Further, the inner end edge of the first penetrating part 131 is separated from the inner end edge of the photoelectric conversion layer penetrating part 331 when viewed in the z direction. Thereby, a part of the 1st connection part 13 of the 1st division part 11 is exposed from the photoelectric converting layer penetration part 331 in z direction view. The second connection portions 23 of the second partition portions 21-2 to 21-4 of the second conductive layer 2 are in contact with the exposed portions. Further, the second connection portions 23 of the second partition portions 21-2 to 21-4 are in contact with the support substrate 41 through the first penetration portion 131.
　光電変換層３は、複数の光電変換層発電部３２を有している。また、第１導電層１の第１区画部１１は、第１電極部１２を有しており、第２導電層２の第２区画部２１は、第２電極部２２を有している。図１、図３および図６においては、第１電極部１２、第２電極部２２および光電変換層発電部３２に、複数の離散点からなるハッチングを付している。第１電極部１２は、ｚ方向視において光電変換層接続部３３と重ならず且つ第２導電層２の第２区画部２１と重なる部分である。言い換えれば第２区画部２１は、ｚ方向視において、第１電極部１２と一致する部分である。光電変換層発電部３２は、ｚ方向視において、第１電極部１２および第２電極部２２と一致する部分である。本実施形態においては、第１電極部１２、第２電極部２２および光電変換層発電部３２は、ｚ方向視において第２区画部第１端縁２１０、第２区画部第２端縁２２０、２つの第２区画部第３端縁２３０および２つの第２被覆部１２２によって規定された部分である。第１電極部１２および第２電極部２２は、光電変換層発電部３２を介して積層されており、互いに接触していない。これにより、第１電極部１２、第２電極部２２および光電変換層発電部３２は、発電を行う部分となっている。 The photoelectric conversion layer 3 has a plurality of photoelectric conversion layer power generation units 32. Further, the first partition portion 11 of the first conductive layer 1 has a first electrode portion 12, and the second partition portion 21 of the second conductive layer 2 has a second electrode portion 22. 1, 3, and 6, the first electrode unit 12, the second electrode unit 22, and the photoelectric conversion layer power generation unit 32 are hatched with a plurality of discrete points. The first electrode portion 12 is a portion that does not overlap with the photoelectric conversion layer connection portion 33 and overlaps with the second partition portion 21 of the second conductive layer 2 when viewed in the z direction. In other words, the second partition portion 21 is a portion that coincides with the first electrode portion 12 when viewed in the z direction. The photoelectric conversion layer power generation unit 32 is a portion that coincides with the first electrode unit 12 and the second electrode unit 22 when viewed in the z direction. In this embodiment, the 1st electrode part 12, the 2nd electrode part 22, and the photoelectric converting layer electric power generation part 32 are 2nd division part 1st edge 210, 2nd division part 2nd edge 220 in z direction view, This is a portion defined by the two second partition portion third edges 230 and the two second covering portions 122. The 1st electrode part 12 and the 2nd electrode part 22 are laminated | stacked via the photoelectric converting layer electric power generation part 32, and are not mutually contacting. Thereby, the 1st electrode part 12, the 2nd electrode part 22, and the photoelectric converting layer electric power generation part 32 are parts which generate electric power.
　本実施形態においては、ｚ方向視において、光電変換層接続部３３と光電変換層発電部３２の一部とが、ｙ方向において隙間を介して隣り合っている。すなわち、光電変換層接続部３３は、ｘ方向における位置が、光電変換層発電部３２の一部のｘ方向位置と同じである。また、第１接続部１３は、基板露出領域４１０を介して隣り合う第１区画部１１の第１電極部１２の一部とｙ方向において隣り合っている。すなわち、当該第１接続部１３は、ｘ方向における位置が、当該第１電極部１２の一部のｘ方向位置と重なっている。 In the present embodiment, when viewed in the z direction, the photoelectric conversion layer connection portion 33 and a part of the photoelectric conversion layer power generation portion 32 are adjacent to each other with a gap in the y direction. That is, the position of the photoelectric conversion layer connection unit 33 in the x direction is the same as the position in the x direction of a part of the photoelectric conversion layer power generation unit 32. Further, the first connection portion 13 is adjacent to a part of the first electrode portion 12 of the first partition portion 11 adjacent to each other via the substrate exposed region 410 in the y direction. That is, the position of the first connection portion 13 in the x direction overlaps with a part of the first electrode portion 12 in the x direction.
　図１、図２、図６および図７に示すように、第３区画部１５は、外部電極部１５１および外部接続部１５３を有する。外部接続部１５３は、ｚ方向視において第２区画部２１－１の第２接続部２３および光電変換層接続部３３と一致する部分である。外部接続部１５３は、光電変換層貫通部３３１を通じて第２区画部２１－１の第２接続部２３と接触している。本実施形態においては、外部接続部１５３には、外部接続部貫通部１５３１が設けられている。本実施形態においては、第１導電層１の外部接続部１５３をｚ方向に貫通する貫通孔を外部接続部貫通部１５３１と称する。外部接続部貫通部１５３１は、ｚ方向視において光電変換層貫通部３３１に内包されている。また、外部接続部貫通部１５３１の内端縁は、ｚ方向視において光電変換層貫通部３３１の内端縁から離間している。これにより、第３区画部１５の外部接続部１５３の一部が、ｚ方向視において光電変換層貫通部３３１から露出している。この露出した部分に第２導電層２の第２区画部２１－１の第２接続部２３が接触している。また、第２接続部２３は、外部接続部貫通部１５３１を介して支持基板４１に接している。外部電極部１５１は、第２導電層２、光電変換層３およびパッシベーション層４２から露出した部分である。外部電極部１５１は、有機薄膜太陽電池モジュールＡ１において発電された電力を出力する部位であり、たとえば電子機器Ｂ１の端子に導通する。 As shown in FIGS. 1, 2, 6, and 7, the third partition portion 15 includes an external electrode portion 151 and an external connection portion 153. The external connection portion 153 is a portion that coincides with the second connection portion 23 and the photoelectric conversion layer connection portion 33 of the second partition portion 21-1 when viewed in the z direction. The external connection part 153 is in contact with the second connection part 23 of the second partition part 21-1 through the photoelectric conversion layer penetration part 331. In the present embodiment, the external connection portion 153 is provided with an external connection portion penetration portion 1531. In the present embodiment, a through hole that penetrates the external connection portion 153 of the first conductive layer 1 in the z direction is referred to as an external connection portion through portion 1531. The external connection portion penetration portion 1531 is included in the photoelectric conversion layer penetration portion 331 as viewed in the z direction. Further, the inner end edge of the external connection portion penetration portion 1531 is separated from the inner end edge of the photoelectric conversion layer penetration portion 331 when viewed in the z direction. Thereby, a part of external connection part 153 of the 3rd division part 15 is exposed from the photoelectric converting layer penetration part 331 in z direction view. The second connection part 23 of the second partition part 21-1 of the second conductive layer 2 is in contact with the exposed part. The second connection portion 23 is in contact with the support substrate 41 through the external connection portion through portion 1531. The external electrode portion 151 is a portion exposed from the second conductive layer 2, the photoelectric conversion layer 3, and the passivation layer 42. The external electrode portion 151 is a portion that outputs the electric power generated in the organic thin film solar cell module A1, and is electrically connected to the terminal of the electronic device B1, for example.
　また、本実施形態においては、図１および図２に示すように、ｘ方向において第３区画部１５とは反対側に設けられた第１区画部１１－４が、外部電極部１４１を有している。外部電極部１４１は、第１区画部１１－４のうち第２導電層２、光電変換層３およびパッシベーション層４２から露出した部分である。外部電極部１４１は、有機薄膜太陽電池モジュールＡ１において発電された電力を出力する部位であり、たとえば電子機器Ｂ１の端子に導通する。 In the present embodiment, as shown in FIGS. 1 and 2, the first partition portion 11-4 provided on the side opposite to the third partition portion 15 in the x direction has the external electrode portion 141. ing. The external electrode portion 141 is a portion exposed from the second conductive layer 2, the photoelectric conversion layer 3, and the passivation layer 42 in the first partition portion 11-4. The external electrode part 141 is a part that outputs electric power generated in the organic thin film solar cell module A1, and is electrically connected to, for example, a terminal of the electronic device B1.
　図１、図２および図８から理解されるように、本実施形態においては、有機薄膜太陽電池モジュールＡ１において、４組の第１電極部１２、第２電極部２２および光電変換層発電部３２が、６組の第１接続部１３、第２接続部２３および光電変換層接続部３３を介して互いに直接に接続されている。直列接続された４組の第１電極部１２、第２電極部２２および光電変換層発電部３２において発電された電力は、外部電極部１４１および外部電極部１５１から出力される。この電力は、電子機器Ｂ１の駆動部７１の駆動に用いられる。 As understood from FIGS. 1, 2, and 8, in this embodiment, in the organic thin film solar cell module A <b> 1, four sets of the first electrode unit 12, the second electrode unit 22, and the photoelectric conversion layer power generation unit 32. Are directly connected to each other through six sets of the first connection portion 13, the second connection portion 23, and the photoelectric conversion layer connection portion 33. The electric power generated in the four sets of the first electrode unit 12, the second electrode unit 22, and the photoelectric conversion layer power generation unit 32 connected in series is output from the external electrode unit 141 and the external electrode unit 151. This electric power is used to drive the drive unit 71 of the electronic apparatus B1.
　次に、有機薄膜太陽電池モジュールＡ１の製造方法の一例について、図９～図１６を参照しつつ、以下に説明する。なお、図９、図１１、図１３および図１５は、図３と同様の部分を示す要部拡大平面図であり、図１０、図１２、図１４および図１６は、図４と同様の部分を示す要部拡大断面図である。 Next, an example of a method for producing the organic thin film solar cell module A1 will be described below with reference to FIGS. 9, FIG. 11, FIG. 13 and FIG. 15 are main part enlarged plan views showing the same parts as FIG. 3, and FIGS. 10, 12, 14 and 16 are the same parts as FIG. It is a principal part expanded sectional view which shows this.
　まず、図９および図１０に示すように、支持基板４１の片面にたとえばスパッタ法などの一般的な手法によりＩＴＯを成膜することにより、第１導電膜１０を形成する。次いで、第１導電膜１０をパターニングすることにより、基板露出領域４１０、基板露出領域４１１および基板露出領域４１２形成し、複数の第１区画部１１および第３区画部１５が得られる。第１導電膜１０へのパターニング手法としては、たとえばウエットエッチングを用いた手法、Ｇｒｅｅｎレーザー光やＩＲレーザー光等のレーザーパターニングを用いた手法が適宜採用される。本実施形態においては、レーザー光Ｌｚ１として、ＩＲレーザー光が用いられる。なお、図９においては、後述する工程を経ることにより第１被覆部１１２および第２被覆部１２２となる部位に理解の便宜上、符号を付している。 First, as shown in FIGS. 9 and 10, the first conductive film 10 is formed by depositing ITO on one surface of the support substrate 41 by a general method such as sputtering. Next, by patterning the first conductive film 10, a substrate exposed region 410, a substrate exposed region 411 and a substrate exposed region 412 are formed, and a plurality of first partition portions 11 and third partition portions 15 are obtained. As a patterning method for the first conductive film 10, for example, a method using wet etching and a method using laser patterning such as Green laser light and IR laser light are appropriately employed. In the present embodiment, IR laser light is used as the laser light Lz1. Note that, in FIG. 9, reference numerals are given to portions that become the first covering portion 112 and the second covering portion 122 through the steps described later for the sake of convenience.
　次いで、図１１および図１２に示すように、有機膜３０を形成する。有機膜３０の形成は、たとえば、スピンコート塗布により支持基板４１上および第１導電膜１０上に有機膜を成膜することによりなされる。次いで、有機膜３０に対して光電変換層貫通部３３１を形成する。光電変換層貫通部３３１の形成は、たとえばレーザーパターニングによってなされる。このレーザーパターニングに用いられるレーザー光Ｌｚ２は、光電変換層貫通部３３１を部分的に除去可能であるものが適宜選択される。本実施形態においては、レーザー光Ｌｚ２としてＩＲレーザー光を用いたレーザーパターニングを行った場合を例に説明する。この場合、レーザー光Ｌｚ２は、有機膜３０と第１導電膜１０との一部ずつを除去する。このため、有機膜３０に光電変換層貫通部３３１が形成されるとともに、第１導電膜１０に第１貫通部１３１が形成される。このパターニングを経ることにより、図１３および図１４に示すように、第１導電層１および光電変換層３が得られる。また、レーザー光Ｌｚ２による光電変換層貫通部３３１および第１貫通部１３１の形成に伴い、光電変換層３には、突起３３２が形成される。 Next, as shown in FIGS. 11 and 12, an organic film 30 is formed. The organic film 30 is formed, for example, by forming an organic film on the support substrate 41 and the first conductive film 10 by spin coating. Next, the photoelectric conversion layer penetrating portion 331 is formed in the organic film 30. The photoelectric conversion layer penetrating part 331 is formed by, for example, laser patterning. As the laser beam Lz2 used for this laser patterning, one that can partially remove the photoelectric conversion layer penetrating portion 331 is appropriately selected. In the present embodiment, a case where laser patterning using an IR laser beam as the laser beam Lz2 is performed will be described as an example. In this case, the laser beam Lz2 removes part of the organic film 30 and the first conductive film 10 one by one. For this reason, the photoelectric conversion layer penetration part 331 is formed in the organic film 30, and the first penetration part 131 is formed in the first conductive film 10. Through this patterning, the first conductive layer 1 and the photoelectric conversion layer 3 are obtained as shown in FIGS. 13 and 14. In addition, with the formation of the photoelectric conversion layer penetrating portion 331 and the first penetrating portion 131 by the laser light Lz2, a protrusion 332 is formed in the photoelectric conversion layer 3.
　次いで、図１５および図１６に示すように、第２導電層２を形成する。第２導電層２の形成は、たとえば上述した金属をたとえば電子ビーム蒸着法などの蒸着法によって支持基板４１、第１導電層１および光電変換層３上に金属膜を成膜する。この際の成膜厚さは、光電変換層３の厚さよりも厚く、たとえば１μｍ～５μｍである。次に、該金属膜に例えばマスク層を用いたエッチングを行うことによりパターニングを施す。このパターニングにより、第１導電層１上および光電変換層３上に複数の第２区画部２１を有する第２導電層２を形成する。この後は、たとえばプラズマＣＶＤ法によってＳｉＮまたはＳｉＯＮを支持基板４１、第１導電層１、光電変換層３および第２導電層２上に成膜することにより、パッシベーション層４２を形成する。以上の工程を経ることにより、有機薄膜太陽電池モジュールＡ１が得られる。 Next, as shown in FIGS. 15 and 16, the second conductive layer 2 is formed. The second conductive layer 2 is formed, for example, by forming a metal film on the support substrate 41, the first conductive layer 1 and the photoelectric conversion layer 3 from the above-described metal by an evaporation method such as an electron beam evaporation method. The film thickness at this time is larger than the thickness of the photoelectric conversion layer 3 and is, for example, 1 μm to 5 μm. Next, the metal film is patterned by etching using, for example, a mask layer. By this patterning, the second conductive layer 2 having a plurality of second partition portions 21 is formed on the first conductive layer 1 and the photoelectric conversion layer 3. Thereafter, a passivation layer 42 is formed by depositing SiN or SiON on the support substrate 41, the first conductive layer 1, the photoelectric conversion layer 3, and the second conductive layer 2 by, for example, plasma CVD. The organic thin film solar cell module A1 is obtained through the above steps.
　次に、有機薄膜太陽電池モジュールＡ１および電子機器Ｂ１の作用について説明する。 Next, the operation of the organic thin film solar cell module A1 and the electronic device B1 will be described.
　本実施形態によれば、図４および図５に示すように、第２導電層２の厚さは、光電変換層３の厚さよりも厚い。このため、たとえば光電変換層３に光電変換層貫通部３３１を形成する際に突起３３２が生じたとしても、この突起３３２を第２導電層２によってより確実に覆うことができる。これにより、突起３３２の存在によって、たとえばパッシベーション層４２に微細な亀裂が生じることなどを回避することができる。これは、外気が光電変換層３等に進入することを阻止するのに適している。したがって、有機薄膜太陽電池モジュールＡ１および電子機器Ｂ１の意図しない破損を防止することができる。 According to this embodiment, as shown in FIGS. 4 and 5, the thickness of the second conductive layer 2 is thicker than the thickness of the photoelectric conversion layer 3. For this reason, for example, even when the protrusion 332 is generated when the photoelectric conversion layer penetrating portion 331 is formed in the photoelectric conversion layer 3, the protrusion 332 can be more reliably covered with the second conductive layer 2. Thereby, for example, it is possible to avoid the occurrence of fine cracks in the passivation layer 42 due to the presence of the protrusions 332. This is suitable for preventing outside air from entering the photoelectric conversion layer 3 and the like. Therefore, unintentional breakage of the organic thin film solar cell module A1 and the electronic device B1 can be prevented.
　光電変換層３の厚さが、５０ｎｍ～３００ｎｍであるのに対し、第２導電層２の厚さが、１μｍ～５μｍとされている。このような厚さ関係とすることにより、製造時等に光電変換層３に生じうる光電変換層貫通部３３１等のいびつな部分を適切に覆うことができる。また、有機薄膜太陽電池モジュールＡ１の製造時に光電変換層３の表面に付着しうる、たとえばシリカ粒子等を、第２導電層２によって覆うことが可能である。 The thickness of the photoelectric conversion layer 3 is 50 nm to 300 nm, while the thickness of the second conductive layer 2 is 1 μm to 5 μm. By adopting such a thickness relationship, it is possible to appropriately cover an irregular portion such as the photoelectric conversion layer penetrating portion 331 that may occur in the photoelectric conversion layer 3 during production or the like. Moreover, it is possible to cover the silica particle etc. which can adhere to the surface of the photoelectric converting layer 3 at the time of manufacture of organic thin film solar cell module A1 with the 2nd conductive layer 2, for example.
　図３に示すように、光電変換層接続部３３を区画する第１区画部１１－２の第１被覆部１１２によってその一部が規定された基板露出領域４１０は、第２区画部２１－３の第２区画部第２端縁２２０と交差する交差部４１５を有する。これにより、第２区画部２１－３の第２区画部第２端縁２２０に沿って光電変換層接続部３３が部分的に設けられる構成となり、第２区画部２１－３の第２区画部第２端縁２２０の全長にわたって光電変換層接続部３３が設けられる構成とはならない。したがって、光電変換層３のうち非発電の部分である光電変換層接続部３３の面積割合を減少させることが可能であり、実際に発電に寄与する部分である光電変換層発電部３２の減少を抑制することができる。 As shown in FIG. 3, the substrate exposed region 410 partially defined by the first covering portion 112 of the first partition portion 11-2 that partitions the photoelectric conversion layer connecting portion 33 is the second partition portion 21-3. The second section 220 has an intersection 415 that intersects the second edge 220. As a result, the photoelectric conversion layer connecting portion 33 is partially provided along the second partition portion second edge 220 of the second partition portion 21-3, and the second partition portion of the second partition portion 21-3. The photoelectric conversion layer connection portion 33 is not provided over the entire length of the second end edge 220. Therefore, it is possible to reduce the area ratio of the photoelectric conversion layer connection portion 33 that is a non-power generation portion of the photoelectric conversion layer 3, and to reduce the photoelectric conversion layer power generation portion 32 that is a portion that actually contributes to power generation. Can be suppressed.
　また、図３に示す例においては、基板露出領域４１０は、１の交差部４１５と１つの交差部４１６とを有している。すなわち、光電変換層接続部３３を区画する基板露出領域４１０は、第２区画部２１－３の第２区画部第２端縁２２０から延びて第２区画部２１－３の第２区画部第３端縁２３０と交差している。たとえば、本例とは異なり、基板露出領域４１０が第２区画部２１－３の第２区画部第２端縁２２０と２箇所で交差する場合、本例と比べてｚ方向視において第２区画部２１－３と重なる基板露出領域４１０が長くなる。基板露出領域４１０は、非発電の部分であるため、このような非発電の部分の面積割合を縮小するのに適している。 In the example shown in FIG. 3, the substrate exposed region 410 has one intersection 415 and one intersection 416. That is, the substrate exposed region 410 that partitions the photoelectric conversion layer connection portion 33 extends from the second partition portion second edge 220 of the second partition portion 21-3 and extends from the second partition portion 21-3 of the second partition portion 21-3. Crosses 3 edge 230. For example, unlike the present example, when the substrate exposed region 410 intersects the second partition part second end edge 220 of the second partition part 21-3 at two locations, the second partition is viewed in the z direction as compared to the present example. The substrate exposed region 410 that overlaps the portion 21-3 becomes longer. Since the substrate exposed region 410 is a non-power generation portion, it is suitable for reducing the area ratio of such a non-power generation portion.
　光電変換層貫通部３３１は、たとえば直径が４０μｍ程度の貫通孔によって構成されている。このため、光電変換層貫通部３３１を含む光電変換層接続部３３の面積をより縮小させることができる。 The photoelectric conversion layer penetrating portion 331 is constituted by a through hole having a diameter of about 40 μm, for example. For this reason, the area of the photoelectric conversion layer connection part 33 including the photoelectric conversion layer penetrating part 331 can be further reduced.
　第１貫通部１３１は、図１２に示すレーザー光Ｌｚ２としてたとえばＩＲレーザー光を用いた場合に、光電変換層貫通部３３１と一括して形成される。このＩＲレーザー光は、ＩＴＯからなる第１導電層１を部分的に除去可能であるため、図１０に示す第１導電膜１０のレーザーパターニングにおけるレーザー光Ｌｚ１として用いることができる。これにより、図９～図１６に示す有機薄膜太陽電池モジュールＡ１の製造方法において、レーザー光Ｌｚ１およびレーザー光Ｌｚ２として、１種類のレーザー光（ＩＲレーザー光）を用いれば済む。これは、製造方法および製造装置の簡略化に好ましく、制造時間の短縮に寄与する。 The first penetration part 131 is formed together with the photoelectric conversion layer penetration part 331 when, for example, an IR laser beam is used as the laser beam Lz2 shown in FIG. Since this IR laser light can partially remove the first conductive layer 1 made of ITO, it can be used as the laser light Lz1 in the laser patterning of the first conductive film 10 shown in FIG. Thus, in the method for manufacturing the organic thin-film solar cell module A1 shown in FIGS. 9 to 16, one type of laser light (IR laser light) may be used as the laser light Lz1 and the laser light Lz2. This is preferable for simplification of the manufacturing method and the manufacturing apparatus, and contributes to shortening of the manufacturing time.
　第２区画部２１の２つの角部に重なる位置に２組の第１接続部１３、第２接続部２３および光電変換層接続部３３を設けることにより、隣り合う２組の第１電極部１２、第２電極部２２および光電変換層発電部３２の間の抵抗をより低くすることができる。また、仮に一方の組の第１接続部１３、第２接続部２３および光電変換層接続部３３における導通が不適切な状態となったとしても、他方の組の第１接続部１３、第２接続部２３および光電変換層接続部３３によって隣り合う２組の第１電極部１２、第２電極部２２および光電変換層発電部３２を適切に接続することができる。 By providing two sets of the first connection part 13, the second connection part 23, and the photoelectric conversion layer connection part 33 at a position overlapping the two corners of the second partition part 21, two adjacent sets of the first electrode parts 12. The resistance between the second electrode unit 22 and the photoelectric conversion layer power generation unit 32 can be further reduced. In addition, even if conduction in the first connection portion 13, the second connection portion 23, and the photoelectric conversion layer connection portion 33 in one set becomes inappropriate, the first connection portion 13, the second connection in the other set. The two adjacent first electrode parts 12, the second electrode part 22, and the photoelectric conversion layer power generation part 32 can be appropriately connected by the connection part 23 and the photoelectric conversion layer connection part 33.
　図１７は、本発明の変形例を示している。なお、本変形例において、上述した例と同一または類似の要素には、上述した例と同一の符号を付している。 FIG. 17 shows a modification of the present invention. In this modification, the same or similar elements as those in the above example are denoted by the same reference numerals as in the above example.
　図１７は、有機薄膜太陽電池モジュールＡ１の変形例を示している。本変形例においては、第１区画部１１（図１７における第１区画部１１－２）の第１接続部１３に、上述した第１貫通部１３１が形成されていない。すなわち、ｚ方向視において光電変換層貫通部３３１に内包される領域においては、支持基板４１は、第１導電層１の第１接続部１３（図１７における第１区画部１１－２の第１接続部１３）によって覆われている。このような構成は、たとえば、有機膜３０に光電変換層貫通部３３１を形成するためのレーザーパターニングにおいて、レーザー光Ｌｚ２としてＧｒｅｅｎレーザー光を用いるとともに、出力や照射時間を適切に設定することによって実現しうる。また、本変形例においては、光電変換層３に突起３３２が形成されていない。 FIG. 17 shows a modification of the organic thin film solar cell module A1. In the present modification, the first through portion 131 described above is not formed in the first connection portion 13 of the first partition portion 11 (the first partition portion 11-2 in FIG. 17). In other words, in the region enclosed in the photoelectric conversion layer penetrating portion 331 as viewed in the z direction, the support substrate 41 is connected to the first connection portion 13 of the first conductive layer 1 (the first partition portion 11-2 in FIG. It is covered by a connection 13). Such a configuration is realized, for example, by using Green laser light as the laser light Lz2 and appropriately setting the output and irradiation time in laser patterning for forming the photoelectric conversion layer penetrating portion 331 in the organic film 30. Yes. Further, in this modification, the protrusion 332 is not formed on the photoelectric conversion layer 3.
　このような変形例によっても、実際に発電に寄与する部分である光電変換層発電部３２の減少を抑制することができる。 Even with such a modification, it is possible to suppress a decrease in the photoelectric conversion layer power generation unit 32 that is a part that actually contributes to power generation.
　本発明に係る有機薄膜太陽電池モジュール、電子機器および有機薄膜太陽電池モジュールの製造方法は、上述した実施形態に限定されるものではない。本発明に係る電子機器および有機薄膜太陽電池モジュールの製造方法の具体的な構成は、種々に設計変更自在である。 The manufacturing method of the organic thin film solar cell module, the electronic device, and the organic thin film solar cell module according to the present invention is not limited to the above-described embodiment. The specific configuration of the electronic device and the method for manufacturing the organic thin-film solar cell module according to the present invention can be variously changed in design.
［第２－第４実施形態］
　第２ないし第４実施形態および図１８～図４３における符号は、これらの実施形態および図において有効であり、他の実施形態および図における符号とは独立している。ただし、第２ないし第４実施形態の具体的構成と他の実施形態の具体的構成とは、相互に適宜組合せ可能である。 [Second to Fourth Embodiments]
The reference numerals in the second to fourth embodiments and FIGS. 18 to 43 are effective in these embodiments and figures, and are independent of the reference numerals in the other embodiments and figures. However, the specific configurations of the second to fourth embodiments and the specific configurations of the other embodiments can be appropriately combined with each other.
　本発明において、「透明」とは、透過率が約５０％以上であるものと定義する。また「透明」とは、可視光線に対して、無色透明という意味でも使用する。可視光線は波長約３６０ｎｍ～８３０ｎｍ程度、エネルギー約３．４５ｅＶ～１．４９ｅＶ程度に相当し、この領域で透過率が５０％以上あれば透明である。 In the present invention, “transparent” is defined as having a transmittance of about 50% or more. “Transparent” is also used to mean colorless and transparent to visible light. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.
　図１８および図１９は、本発明の第２実施形態に基づく電子機器を示している。本実施形態の電子機器Ｂ２は、有機薄膜太陽電池モジュールＡ２、ケース６１、バンド６２、駆動部７１、長針７２および短針７３を備えている。 18 and 19 show an electronic apparatus based on the second embodiment of the present invention. The electronic apparatus B2 of this embodiment includes an organic thin-film solar cell module A2, a case 61, a band 62, a drive unit 71, a long needle 72, and a short needle 73.
　図１８は、電子機器Ｂ２を示す平面図である。図１９は、電子機器Ｂ２を示すシステム構成図である。 FIG. 18 is a plan view showing the electronic device B2. FIG. 19 is a system configuration diagram showing the electronic apparatus B2.
　有機薄膜太陽電池モジュールＡ２は、電子機器Ｂ２における電源モジュールであり、太陽光などの光を電力に変換する。 Organic thin-film solar cell module A2 is a power supply module in electronic device B2, and converts light such as sunlight into electric power.
　駆動部７１は、有機薄膜太陽電池モジュールＡ２からの給電によって駆動する。長針７２および短針７３は、長針７２によって駆動される。駆動部７１は、計時機能を備えている。また、駆動部７１は、時刻に対応した角度（位置）に長針７２および短針７３を駆動する。さらに、駆動部７１は、有機薄膜太陽電池モジュールＡ２から取得した電力を計時機能を備えたＩＣにて使用できるようにその電圧や電流のレベルを調整する回路や、有機薄膜太陽電池モジュールＡ２から取得した電力を蓄電する二次電池、が設けられていても良い。光電変換層３は、後述する複数の意匠表示部３５が外観に表れている。複数の意匠表示部３５は、時刻を特定するための意匠とされている。 The driving unit 71 is driven by power feeding from the organic thin film solar cell module A2. The long hand 72 and the short hand 73 are driven by the long hand 72. The drive unit 71 has a timekeeping function. The drive unit 71 drives the long hand 72 and the short hand 73 at an angle (position) corresponding to the time. Further, the drive unit 71 acquires the power acquired from the organic thin film solar cell module A2 from a circuit that adjusts the voltage or current level so that it can be used by an IC having a timekeeping function, or the organic thin film solar cell module A2. A secondary battery that stores the generated electric power may be provided. The photoelectric conversion layer 3 has a plurality of design display portions 35 to be described later appearing on the appearance. The plurality of design display portions 35 are designed to specify time.
　有機薄膜太陽電池モジュールＡ２、駆動部７１、長針７２および短針７３は、金属製または樹脂製などのケース６１に収容されている。バンド６２は、ケース６１を使用者の手首に固定するためのものである。このような構成により、有機薄膜太陽電池モジュールＡ２は時計（腕時計）として構成されている。 The organic thin film solar cell module A2, the driving unit 71, the long needle 72, and the short needle 73 are accommodated in a case 61 made of metal or resin. The band 62 is for fixing the case 61 to the wrist of the user. With such a configuration, the organic thin-film solar cell module A2 is configured as a watch (watch).
　図２０～図２５は、有機薄膜太陽電池モジュールＡ２を示している。有機薄膜太陽電池モジュールＡ２は、第１導電層１、第２導電層２、光電変換層３、支持基板４１、パッシベーション膜４２、接合層４３および保護層４４を備えている。本実施形態においては、有機薄膜太陽電池モジュールＡ２は、平面視円形状とされているが、これは有機薄膜太陽電池モジュールＡ２の形状の一例であり、様々な形状に設定されうる。 20 to 25 show the organic thin film solar cell module A2. The organic thin film solar cell module A2 includes a first conductive layer 1, a second conductive layer 2, a photoelectric conversion layer 3, a support substrate 41, a passivation film 42, a bonding layer 43, and a protective layer 44. In the present embodiment, the organic thin-film solar cell module A2 has a circular shape in plan view, but this is an example of the shape of the organic thin-film solar cell module A2, and can be set in various shapes.
　図２０は、有機薄膜太陽電池モジュールＡ２を示す平面図である。図２１は、有機薄膜太陽電池モジュールＡ２を示す分解斜視図である。図２２は、図２０のＸＸＩＩ－ＸＸＩＩ線に沿う要部拡大断面図である。図２３は、図２０のＸＸＩＩＩ－ＸＸＩＩＩ線に沿う要部拡大断面図である。図２４は、図２０のＸＸＩＶ－ＸＸＩＶ線に沿う要部拡大断面図である。図２５は、図２０のＸＸＶ－ＸＸＶ線に沿う要部拡大断面図である。なお、理解の便宜上、図２０においては、第１導電層１を実線且つ透過するものとして表しており、第２導電層２を隠れ線（点線）で表している。また、光電変換層３の非貫通部分に、複数の離散点からなるハッチングを付している。また、図２２～図２５においては、図中上方から太陽光が向かってくる。 FIG. 20 is a plan view showing the organic thin film solar cell module A2. FIG. 21 is an exploded perspective view showing the organic thin film solar cell module A2. 22 is an enlarged cross-sectional view of a main part taken along line XXII-XXII in FIG. FIG. 23 is an enlarged cross-sectional view of a main part taken along line XXIII-XXIII in FIG. 24 is an enlarged cross-sectional view of a main part taken along line XXIV-XXIV in FIG. FIG. 25 is an enlarged cross-sectional view of a main part taken along line XXV-XXV in FIG. For convenience of understanding, in FIG. 20, the first conductive layer 1 is represented as a solid line and transmits, and the second conductive layer 2 is represented as a hidden line (dotted line). The non-penetrating portion of the photoelectric conversion layer 3 is hatched with a plurality of discrete points. Further, in FIGS. 22 to 25, sunlight comes from above in the drawing.
　支持基板４１は、有機薄膜太陽電池モジュールＡ２の土台となる部材である。支持基板４１は、たとえば透明なガラスあるいは樹脂からなる。支持基板４１の厚さは、たとえば０．０５ｍｍ～２．０ｍｍである。 The support substrate 41 is a member that becomes a base of the organic thin film solar cell module A2. The support substrate 41 is made of, for example, transparent glass or resin. The thickness of the support substrate 41 is, for example, 0.05 mm to 2.0 mm.
　第１導電層１は、支持基板４１上に形成されている。第１導電層１は、透明であり、本実施形態においてはＩＴＯからなる。図２６は、第１導電層１を示す平面図である。同図に示すように、第１導電層１は、複数の第１電極部１１、複数の第１区画部１２、複数の第１連絡部１３、第１端部１４、第１延出部１５、第２延出部１６、複数の開口１８および複数のスリット１９を有する。本実施形態においては、第１導電層１は、第１延出部１５および第２延出部１６を除く部分が平面視略円形状をなす構成とされているが、これは第１導電層１の形状の一例である。第１導電層１の形状は、様々な形状に設定されうる。第１導電層１の厚さは、たとえば１００ｎｍ～３００ｎｍである。なお、図２６においては、第１導電層１の第１電極部１１、第１区画部１２、第１連絡部１３、第１端部１４、第１延出部１５および第２延出部１６に、斜線からなるハッチングを付している。 The first conductive layer 1 is formed on the support substrate 41. The first conductive layer 1 is transparent and is made of ITO in this embodiment. FIG. 26 is a plan view showing the first conductive layer 1. As shown in the figure, the first conductive layer 1 includes a plurality of first electrode portions 11, a plurality of first partition portions 12, a plurality of first connecting portions 13, a first end portion 14, and a first extension portion 15. The second extending portion 16, the plurality of openings 18, and the plurality of slits 19. In the present embodiment, the first conductive layer 1 is configured such that a portion excluding the first extension portion 15 and the second extension portion 16 has a substantially circular shape in plan view. It is an example of 1 shape. The shape of the first conductive layer 1 can be set to various shapes. The thickness of the first conductive layer 1 is, for example, 100 nm to 300 nm. In FIG. 26, the first electrode portion 11, the first partitioning portion 12, the first connecting portion 13, the first end portion 14, the first extending portion 15 and the second extending portion 16 of the first conductive layer 1 are shown. Are hatched with diagonal lines.
　なお、平面視において、隣り合う第１電極部１１同士、隣り合う第１電極部１１と第１区画部１２、隣り合う第１電極部１１と第１連絡部１３、隣り合う第１電極部１１と第１端部１４は、互いに離間して形成されていが、スリット１９は、これらが離間することで生じた領域を示している。 In plan view, adjacent first electrode portions 11, adjacent first electrode portions 11 and first partitioning portions 12, adjacent first electrode portions 11 and first connecting portions 13, and adjacent first electrode portions 11. The first end portion 14 and the first end portion 14 are formed apart from each other, but the slit 19 indicates a region generated by the separation.
　複数の第１電極部１１は、光電変換層３によって生じた正孔が集約される層であり、いわゆるアノード電極として機能する。本実施形態においては、６つの第１電極部１１が同心円状に配置されている。本実施形態の第１電極部１１は、第１導電層１の中心寄りに位置する円弧端縁１１１を有している。６つの第１電極部１１の円弧端縁１１１によって、第１導電層１の中心において平面視円形の開口が区画されている。また、第１電極部１１は、円弧端縁１１１の両端から径方向外方に向けて延びる一対の直線端縁１１２と、これらの直線端縁１１２に繋がり且つ内方に凹む一対の略半円形状の円弧端縁１１３を有する。なお、図２６においては、理解の便宜上、後述する第１連絡部１３の形状のうち第２導電層２の形状によって定義される部分を想像線（二点鎖線）によって示しており、一対の円弧端縁１１３の一方がこれにあたる。第２導電層２の形状によって定義される部分は、第１電極部１１を定義するための境界であり、第１導電層１に形成された物理的な端縁ではないが、本実施形態においては、この境界を円弧端縁１１３と称する。また、第１電極部１１は、一対の円弧端縁１１３に対して径方向外方に位置する円弧端縁１１４を有する。６つの第１電極部１１の円弧端縁１１４によって第１導電層１の平面視略円形部分の外形線が構成されている。さらに第１電極部１１は、円弧端縁１１４の中心付近から内方に凹む端縁を有している。この内方に凹む端縁は、径方向に対して傾斜した一対の直線部分１１５と、これらの直線部分１１５に繋がる略円形状の円形部分１１６とからなり、第１区画部１２を囲んでいる。また、第１電極部１１は、一部が開口されており、この開口部分を開口１８と称する。隣り合う第１電極部１１同士は、スリット１９を挟んで配置されている。なお、本実施形態では、第１電極部１１が自身の径方向外方に位置する円弧端縁の中心付近から内方に凹む端縁を有している例を示したが、第１電極部１１は、径方向外方に位置する円弧端縁が円弧状に連なっており、該端縁を有さない構成としても良い。 The plurality of first electrode portions 11 are layers in which holes generated by the photoelectric conversion layer 3 are aggregated, and function as so-called anode electrodes. In the present embodiment, the six first electrode portions 11 are arranged concentrically. The first electrode portion 11 of the present embodiment has an arc edge 111 located near the center of the first conductive layer 1. A circular opening in a plan view is defined at the center of the first conductive layer 1 by the arc edges 111 of the six first electrode portions 11. The first electrode portion 11 includes a pair of linear edges 112 extending radially outward from both ends of the arc edge 111, and a pair of substantially semicircles that are connected to the linear edges 112 and recessed inward. It has a circular arc edge 113 having a shape. In FIG. 26, for convenience of understanding, a portion defined by the shape of the second conductive layer 2 in the shape of the first connecting portion 13 described later is indicated by an imaginary line (two-dot chain line), and a pair of arcs One of the end edges 113 corresponds to this. The portion defined by the shape of the second conductive layer 2 is a boundary for defining the first electrode portion 11 and is not a physical edge formed in the first conductive layer 1. This boundary is referred to as an arc edge 113. Further, the first electrode portion 11 has an arc edge 114 located radially outward with respect to the pair of arc edges 113. The outer edges of the substantially circular portions of the first conductive layer 1 in plan view are formed by the arc edges 114 of the six first electrode portions 11. Further, the first electrode portion 11 has an edge that is recessed inward from the vicinity of the center of the arc edge 114. The inwardly recessed edge includes a pair of linear portions 115 inclined with respect to the radial direction and a substantially circular circular portion 116 connected to the linear portions 115 and surrounds the first partition portion 12. . Further, the first electrode portion 11 is partially opened, and this opening portion is referred to as an opening 18. Adjacent first electrode portions 11 are arranged with a slit 19 therebetween. In the present embodiment, the first electrode unit 11 has an edge that is recessed inward from the vicinity of the center of the arc edge located radially outward. 11 may have a configuration in which the arc edge located radially outward is continuous in an arc shape and does not have the edge.
　複数の第１区画部１２は、各々がスリット１９を介して第１電極部１１によって囲まれた部分である。第１電極部１１と第１区画部１２とが平面視においてスリット１９を隔てて離間していることにより、第１電極部１１と第１区画部１２とは互いに絶縁されている。後述する意匠表示部３５（貫通部３５０）を介して、第１区画部１２が第２導電層２の一部と接触する。このため、第１区画部１２は、光電変換層３における発電の電極としては機能しない。一方、第１電極部１１は、第１区画部１２とは絶縁されていることにより、発電の電極としての機能が担保されている。また、第１区画部１２は、後述する光電変換層３の意匠表示部３５を平面視において内包している。本実施形態においては、複数の第１区画部１２は、複数の第１電極部１１に囲まれた配置とされており、第１導電層１の平面視における前記略円形状部分の径方向において、中心よりも外周に近い位置に配置されている。第１区画部１２は、たとえば平面視において略円形状の部分と、この略円形状部分から径方向外方に突出するくさび状の部分とを有する形状とされている。 The plurality of first partition parts 12 are parts surrounded by the first electrode part 11 through the slits 19. Since the first electrode portion 11 and the first partition portion 12 are separated from each other with the slit 19 in plan view, the first electrode portion 11 and the first partition portion 12 are insulated from each other. The first partition portion 12 comes into contact with a part of the second conductive layer 2 through a design display portion 35 (through portion 350) described later. For this reason, the first partition 12 does not function as an electrode for power generation in the photoelectric conversion layer 3. On the other hand, the first electrode portion 11 is insulated from the first partition portion 12, thereby ensuring a function as a power generation electrode. Moreover, the 1st division part 12 encloses the design display part 35 of the photoelectric converting layer 3 mentioned later in planar view. In the present embodiment, the plurality of first partition portions 12 are arranged so as to be surrounded by the plurality of first electrode portions 11, and in the radial direction of the substantially circular portion in plan view of the first conductive layer 1. It is arranged at a position closer to the outer periphery than the center. The first partitioning portion 12 has, for example, a shape having a substantially circular portion in a plan view and a wedge-shaped portion that protrudes radially outward from the substantially circular portion.
　複数の第１連絡部１３は、隣り合う２つの第１電極部１１の一方に繋がり、且つスリット１９を挟んで隣り合う２つの第１電極部１１の他方に隣接する。本実施形態においては、第１連絡部１３は、スリット１９によって半円状に区画された突出部分と、この突出部分に繋がり、且つ第１電極部１１内方に入り込む半円状の部分（図２６における想像線で示された部分）と、からなる平面視円形状の部分と、この円形状の部分から径方向外方に突出するくさび状の部分とを有する形状とされている。なお、第１連絡部１３のうち第１電極部１１内方に入り込む半円状の部分は、後述する第２導電層２の形状によって規定される。また、第１連絡部１３は、後述する光電変換層３の意匠表示部３５を平面視において内包している。本実施形態においては、第１連絡部１３は、第１区画部１２と同様に第１導電層１の平面視における前記略円形状部分の径方向において、中心よりも外周に近い位置に配置されている。 The plurality of first connecting portions 13 are connected to one of the two adjacent first electrode portions 11 and are adjacent to the other of the two adjacent first electrode portions 11 across the slit 19. In the present embodiment, the first connecting portion 13 includes a protruding portion that is partitioned in a semicircular shape by the slit 19 and a semicircular portion that is connected to the protruding portion and enters the inside of the first electrode portion 11 (see FIG. 26, a portion having a circular shape in plan view, and a wedge-shaped portion protruding outward in the radial direction from the circular portion. A semicircular portion of the first connecting portion 13 that enters the first electrode portion 11 is defined by the shape of the second conductive layer 2 described later. Moreover, the 1st communication part 13 includes the design display part 35 of the photoelectric converting layer 3 mentioned later in planar view. In the present embodiment, the first connecting portion 13 is disposed at a position closer to the outer periphery than the center in the radial direction of the substantially circular portion in a plan view of the first conductive layer 1, similarly to the first partition portion 12. ing.
　第１延出部１５は、複数の第１電極部１１のいずれか１の第１電極部１１に繋がっている。より具体的には、図２６において図中下側左方の第１電極部１１の円弧端縁１１４の図中右方部分から第１導電層１の径方向外方に延出している。本実施形態の第１延出部１５は、平面視略矩形状であるが、第１延出部１５の形状はこれに限定されず、様々な形状を採用できる。 The first extending portion 15 is connected to one of the plurality of first electrode portions 11. More specifically, in FIG. 26, the first conductive layer 1 extends radially outward from the right portion of the arc edge 114 of the lower left first electrode portion 11 in the drawing. Although the 1st extension part 15 of this embodiment is plane view substantially rectangular shape, the shape of the 1st extension part 15 is not limited to this, Various shapes can be adopted.
　第１端部１４は、第１延出部１５に繋がる第１電極部１１とこの第１電極部１１に隣り合う第１電極部１１とにスリット１９を介して挟まれた部分である。本実施形態においては、第１端部１４は、第１延出部１５に繋がる第１電極部１１と、図２６においてこの第１電極部１１に対して右側に隣接する第１電極部１１とに挟まれている。第１端部１４は、たとえば平面視円形状の部分と、この円形状の部分から径方向外方に突出するくさび状の部分とを有する形状とされている。本実施形態においては、第１端部１４は、第１区画部１２および第１連絡部１３と同様に光電変換層３の平面視における前記略円形状部分の径方向において、中心よりも外周に近い位置に配置されている。 The first end portion 14 is a portion sandwiched between the first electrode portion 11 connected to the first extension portion 15 and the first electrode portion 11 adjacent to the first electrode portion 11 via the slit 19. In the present embodiment, the first end portion 14 includes a first electrode portion 11 connected to the first extension portion 15, and a first electrode portion 11 adjacent to the right side with respect to the first electrode portion 11 in FIG. 26. It is sandwiched between. The first end portion 14 has, for example, a shape having a circular portion in plan view and a wedge-shaped portion projecting radially outward from the circular portion. In the present embodiment, the first end portion 14 is located on the outer periphery from the center in the radial direction of the substantially circular portion in the plan view of the photoelectric conversion layer 3, similarly to the first partition portion 12 and the first connecting portion 13. It is arranged at a close position.
　第２延出部１６は、第１端部１４に繋がっており、第１端部１４および第１端部１４に隣り合う第１電極部１１から第１導電層１の径方向外方に延出している。本実施形態の第２延出部１６は、平面視略矩形状であるが、第２延出部１６の形状はこれに限定されず、様々な形状を採用できる。本実施形態においては、図２６における図中下側右方に位置する第１電極部１１の図中下方に第２延出部１６が配置されている。また、第１延出部１５と第２延出部１６とが図中左右方向において隣り合う配置とされている。また、第１端部１４の図中左側部分は、第１延出部１５の一部と図中左右方向の位置が一致し、第１端部１４の図中右側部分は、第２延出部１６の一部と図中左右方向の位置が一致する。 The second extending portion 16 is connected to the first end portion 14 and extends outward in the radial direction of the first conductive layer 1 from the first end portion 14 and the first electrode portion 11 adjacent to the first end portion 14. I'm out. Although the 2nd extension part 16 of this embodiment is a planar view substantially rectangular shape, the shape of the 2nd extension part 16 is not limited to this, Various shapes can be employ | adopted. In the present embodiment, the second extending portion 16 is disposed below the first electrode portion 11 located on the lower right side in the drawing in FIG. Moreover, the 1st extension part 15 and the 2nd extension part 16 are set as the arrangement | positioning adjacent in the left-right direction in the figure. Further, the left side portion of the first end portion 14 in the drawing coincides with the position of the first extending portion 15 in the left-right direction in the drawing, and the right side portion of the first end portion 14 in the drawing has the second extending portion. A part of the part 16 and the position in the left-right direction in the figure coincide.
　複数の開口１８は、厚さ方向に第１導電層１を貫通している。本実施形態においては、開口１８は、たとえば第１区画部１２、第１連絡部１３および第１端部１４などと比較して相対的に平面視において面積が小さい矩形状であるが、これは開口１８の大きさおよび形状の一例であり、開口１８は、第１区画部１２等と比較して平面視において面積が大きく形成されていてもよく、円形状等であってもよく、これらに限られず種々実現可能である。複数の開口１８は、平面視において第１区画部１２、第１連絡部１３および第１端部１４の中心よりも径方向外方に配置されている。 The plurality of openings 18 penetrate the first conductive layer 1 in the thickness direction. In the present embodiment, the opening 18 has a rectangular shape whose area is relatively small in a plan view as compared with the first partition portion 12, the first connecting portion 13, the first end portion 14, and the like. This is an example of the size and shape of the opening 18, and the opening 18 may have a larger area in plan view than the first partition 12 or the like, and may have a circular shape or the like. Various implementations are possible without limitation. The plurality of openings 18 are disposed radially outward from the centers of the first partition portion 12, the first connecting portion 13, and the first end portion 14 in plan view.
　第２導電層２は、その大部分が光電変換層３を介して第１導電層１上に積層されている。また、第２導電層２の一部は、第１導電層１に直接接している。第２導電層２の材質は特に限定されないが、本実施形態においては、第２導電層２は、Ａｌ、Ｗ、Ｍｏ、Ｍｎ、Ｍｇに代表される金属からなる。以下においては、第２導電層２がＡｌからなる場合を例に説明する。したがって、第２導電層２は、不透明である。またこの場合、第２導電層２の支持基板４１とは反対側の表面に、Ａｌ２Ｏ３からなる不動態皮膜（図示略）が形成されてもよい。第２導電層２の厚さは、たとえば３０ｎｍ～１５０ｎｍである。 Most of the second conductive layer 2 is laminated on the first conductive layer 1 via the photoelectric conversion layer 3. A part of the second conductive layer 2 is in direct contact with the first conductive layer 1. Although the material of the 2nd conductive layer 2 is not specifically limited, In this embodiment, the 2nd conductive layer 2 consists of metals represented by Al, W, Mo, Mn, and Mg. Hereinafter, a case where the second conductive layer 2 is made of Al will be described as an example. Therefore, the second conductive layer 2 is opaque. In this case, a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second conductive layer 2 opposite to the support substrate 41. The thickness of the second conductive layer 2 is, for example, 30 nm to 150 nm.
　図２７は、第２導電層２を示す平面図である。同図に示すように、第２導電層２は、複数の第２電極部２１、複数の第２区画部２２、複数の第２連絡部２３、第２端部２４および複数のスリット２９を有する。本実施形態においては、第２導電層２は、平面視略円形状とされているが、これは第２導電層２の形状の一例である。第２導電層２の形状は、様々な形状に設定されうる。なお、図２７においては、第２導電層２の第２電極部２１、第２区画部２２、第２連絡部２３および第２端部２４に、斜線からなるハッチングを付している。 FIG. 27 is a plan view showing the second conductive layer 2. As shown in the figure, the second conductive layer 2 includes a plurality of second electrode portions 21, a plurality of second partition portions 22, a plurality of second connecting portions 23, a second end portion 24, and a plurality of slits 29. . In the present embodiment, the second conductive layer 2 has a substantially circular shape in plan view, but this is an example of the shape of the second conductive layer 2. The shape of the second conductive layer 2 can be set to various shapes. In FIG. 27, the second electrode part 21, the second partition part 22, the second connecting part 23, and the second end part 24 of the second conductive layer 2 are hatched.
　なお、平面視において、隣り合う第２電極部２１同士、隣り合う第２電極部２１と第２連絡部２３は、互いに離間して形成されているが、スリット２９は、これらが離間することで生じた領域を示している。 In the plan view, the adjacent second electrode portions 21 and the adjacent second electrode portion 21 and the second connecting portion 23 are formed apart from each other, but the slit 29 is formed by separating them. The resulting region is shown.
　複数の第２電極部２１は、光電変換層３によって生じた電子が集約される層であり、いわゆるカソード電極として機能する。第２電極部２１は、平面視において、第１電極部１１と一致する。すなわち、本実施形態の第２電極部２１は、平面視略円形状とされた第２導電層２の中心寄りに位置する円弧端縁２１１を有している。６つの第２電極部２１の円弧端縁２１１によって、第２導電層２の中心において平面視円形の開口が形成されている。また、第２電極部２１は、円弧端縁２１１の両端から径方向外方に向けて延びる一対の直線端縁２１２と、これらの直先端縁２１２に繋がり且つ内方に凹む一対の略半円形状の円弧端縁２１３を有する。なお、図２７においては、理解の便宜上、第２連絡部２３のうち第１導電層１の第１連絡部１３の形状によって定義される部分を想像線（二点鎖線）によって示しており、一対の円弧端縁２１３の一方がこれにあたる。第１連絡部１３の形状によって定義される部分は、第２電極部２１を定義するための境界であり、第２導電層２に形成された物理的な端縁ではないが、本実施形態においては、この境界を円弧端縁２１３と称する。また、第２電極部２１は、一対の円弧端縁２１３に対して径方向外方に位置する円弧端縁２１４を有する。６つの第２電極部２１の円弧端縁２１４によって第２導電層２の平面視外形線が構成されている。なお、第２電極部２１には、円弧端縁２１４の中心付近から内方に凹む端縁を定義付けることができる。この内方に凹む端縁は、第１導電層１の第１区画部１２の形状によって定義される境界であり、第２導電層２に形成された物理的な端縁ではないが、本実施形態においては、この境界を便宜上、端縁と称する。この端縁は、径方向に対して傾斜した一対の直線部分２１５と、これらの直線部分２１５に繋がる略円形状の円形部分２１６とからなり、第２区画部２２を囲んでいる。本実施形態においては、６つの第２電極部２１が同心円状に配置されている。隣り合う第２電極部２１同士は、スリット２９を挟んで配置されている。 The plurality of second electrode portions 21 are layers in which electrons generated by the photoelectric conversion layer 3 are aggregated, and function as so-called cathode electrodes. The second electrode portion 21 coincides with the first electrode portion 11 in plan view. That is, the second electrode portion 21 of the present embodiment has the arc edge 211 located near the center of the second conductive layer 2 that has a substantially circular shape in plan view. A circular opening in a plan view is formed in the center of the second conductive layer 2 by the arc edges 211 of the six second electrode portions 21. The second electrode portion 21 includes a pair of linear end edges 212 extending radially outward from both ends of the arc end edge 211 and a pair of substantially semicircles that are connected to the straight end edges 212 and recessed inwardly. It has a circular arc edge 213 having a shape. In FIG. 27, for convenience of understanding, a portion defined by the shape of the first connecting portion 13 of the first conductive layer 1 in the second connecting portion 23 is indicated by an imaginary line (two-dot chain line). One of the circular arc edges 213 corresponds to this. The portion defined by the shape of the first connecting portion 13 is a boundary for defining the second electrode portion 21 and is not a physical edge formed in the second conductive layer 2. This boundary is referred to as an arc edge 213. Further, the second electrode portion 21 has an arc edge 214 that is located radially outward with respect to the pair of arc edges 213. The arcuate edges 214 of the six second electrode portions 21 constitute the outline of the second conductive layer 2 in plan view. The second electrode portion 21 can be defined with an edge that is recessed inward from the vicinity of the center of the arc edge 214. This inwardly recessed edge is a boundary defined by the shape of the first partition portion 12 of the first conductive layer 1, and is not a physical edge formed in the second conductive layer 2, but this embodiment In the form, this boundary is referred to as an edge for convenience. The edge includes a pair of linear portions 215 inclined with respect to the radial direction and a substantially circular circular portion 216 connected to the linear portions 215 and surrounds the second partition portion 22. In the present embodiment, the six second electrode portions 21 are arranged concentrically. Adjacent second electrode portions 21 are disposed with a slit 29 therebetween.
　複数の第２区画部２２は、図２０に示すように、平面視において第１導電層１の複数の第１区画部１２に重なる部位である。第２区画部２２は、後述する光電変換層３の意匠表示部３５を平面視において内包している。第２区画部２２は、意匠表示部３５を通じて第１区画部１２と導通しており、第１区画部１２と同様に光電変換層３における発電の電極としては機能しない。本実施形態においては、複数の第２区画部２２は、複数の第２電極部２１に囲まれた配置とされており、平面視において略円形状とされた第２導電層２の中心よりも外周に近い位置に配置されている。第２区画部２２は、たとえば平面視において略円形状の部分と、この略円形状部分から径方向外方に突出するくさび状の部分とを有する形状とされている。 As shown in FIG. 20, the plurality of second partition portions 22 are portions that overlap the plurality of first partition portions 12 of the first conductive layer 1 in plan view. The 2nd division part 22 encloses the design display part 35 of the photoelectric converting layer 3 mentioned later in planar view. The second partition section 22 is electrically connected to the first partition section 12 through the design display section 35, and does not function as a power generation electrode in the photoelectric conversion layer 3, like the first partition section 12. In the present embodiment, the plurality of second partition portions 22 are disposed so as to be surrounded by the plurality of second electrode portions 21, and are more than the center of the second conductive layer 2 that is substantially circular in plan view. It is arranged at a position close to the outer periphery. The second partition portion 22 has, for example, a shape having a substantially circular portion in a plan view and a wedge-shaped portion protruding outward in the radial direction from the substantially circular portion.
　複数の第２連絡部２３は、隣り合う２つの第２電極部２１の一方に繋がり、且つスリット２９を挟んで隣り合う２つの第２電極部２１の他方に隣接する。本実施形態においては、第２連絡部２３は、平面視において、スリット２９によって半円状に区画された突出部分と、この突出部分に繋がり、且つ第２電極部２１内方に入り込む半円状の部分（図２７における想像線で示された部分）と、からなる平面視円形状の部分と、この円形状の部分から径方向外方に突出するくさび状の部分とを有する形状とされている。なお、第２連絡部２３のうち第２電極部２１内方に入り込む半円状の部分は、図２６に示す第１導電層１の第１連絡部１３によって規定される。また、上述した第１連絡部１３のうち第１電極部１１内包に入り込む半円状部分は、第２連絡部２３によって規定されている。すなわち、図２０から理解されるように、第１連絡部１３と第２連絡部２３とは、平面視において略円形状とされている。また、第２連絡部２３は、後述する光電変換層３の意匠表示部３５を平面視において内包している。本実施形態においては、第２連絡部２３は、第２区画部２２と同様に平面視において略円形状とされた第２導電層２の中心よりも外周に近い位置に配置されている。 The plurality of second connecting portions 23 are connected to one of the two adjacent second electrode portions 21 and are adjacent to the other of the two adjacent second electrode portions 21 with the slit 29 interposed therebetween. In the present embodiment, the second connecting portion 23 is a semicircular shape that is connected to the projecting portion that is partitioned in a semicircular shape by the slit 29 and enters the second electrode portion 21 in plan view. (A portion indicated by an imaginary line in FIG. 27), a circular portion in plan view, and a wedge-shaped portion projecting radially outward from the circular portion. Yes. A semicircular portion of the second connecting portion 23 that enters the inside of the second electrode portion 21 is defined by the first connecting portion 13 of the first conductive layer 1 shown in FIG. In addition, the semicircular portion that enters the first electrode portion 11 in the first connecting portion 13 described above is defined by the second connecting portion 23. That is, as understood from FIG. 20, the first connecting portion 13 and the second connecting portion 23 are substantially circular in a plan view. Moreover, the 2nd connection part 23 includes the design display part 35 of the photoelectric converting layer 3 mentioned later in planar view. In this embodiment, the 2nd connection part 23 is arrange | positioned in the position near an outer periphery rather than the center of the 2nd conductive layer 2 made into substantially circle shape in planar view similarly to the 2nd division part 22. As shown in FIG.
　第２端部２４は、平面視において第１導電層１の第１端部１４に一致し、且つ隣接する第２電極部２１に繋がっている。図２０に示すように、第２端部２４は、第１端部１４と同様に平面視略円形状の部分と、この円形状の部分から径方向外方に突出するくさび状の部分とを有する形状とされている。本実施形態においては、第２端部２４は、第２区画部２２および第２連絡部２３と同様に平面視略円形状とされた第２導電層２の径方向において、中心よりも外周に近い位置に配置されている。 The second end portion 24 corresponds to the first end portion 14 of the first conductive layer 1 in a plan view and is connected to the adjacent second electrode portion 21. As shown in FIG. 20, the second end portion 24 includes a substantially circular portion in a plan view like the first end portion 14, and a wedge-shaped portion projecting radially outward from the circular portion. The shape has. In the present embodiment, the second end portion 24 is arranged on the outer periphery rather than the center in the radial direction of the second conductive layer 2 having a substantially circular shape in plan view like the second partition portion 22 and the second connecting portion 23. It is arranged at a close position.
　光電変換層３は、第１導電層１と第２導電層２とに挟まれて、支持基板４１に積層されている。光電変換層３は、有機薄膜からなる層であり、受けた光を電力に変換する光電変換機能を発揮する。光電変換層３の具体的構成は特に限定されないが、その一例を挙げると、バルクヘテロ接合有機活性層と、このバルクヘテロ接合有機活性層に対して第１導電層１側に積層された正孔輸送層とからなる。本実施形態においては、光電変換層３は、平面視円形状とされているが、これは一例であり、光電変換層３は、様々な形状とされうる。光電変換層３の厚さは、たとえば５０ｎｍ～３００ｎｍである。 The photoelectric conversion layer 3 is sandwiched between the first conductive layer 1 and the second conductive layer 2 and laminated on the support substrate 41. The photoelectric conversion layer 3 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power. The specific configuration of the photoelectric conversion layer 3 is not particularly limited. For example, a bulk heterojunction organic active layer and a hole transport layer stacked on the first conductive layer 1 side with respect to the bulk heterojunction organic active layer are given. It consists of. In the present embodiment, the photoelectric conversion layer 3 has a circular shape in plan view, but this is an example, and the photoelectric conversion layer 3 can have various shapes. The thickness of the photoelectric conversion layer 3 is, for example, 50 nm to 300 nm.
　バルクヘテロ接合有機活性層は、ｐ型有機活性層領域とｎ型有機活性層領域が混在し、複雑なバルクへテロｐｎ接合を形成している。ｐ型有機活性層領域は、例えば、Ｐ３ＨＴ（poly(3-hexylthiophene-2,5diyl)）で形成され、ｎ型有機活性層領域は、例えば、ＰＣＢＭ（6,6-phenyl-C61-butyric acid methyl ester）で形成されている。正孔輸送層は、たとえばＰＥＤＯＴ：ＰＳＳで形成されている。 In the bulk heterojunction organic active layer, a p-type organic active layer region and an n-type organic active layer region are mixed to form a complex bulk hetero pn junction. The p-type organic active layer region is formed of, for example, P3HT (poly (3-hexylthiophene-2,5diyl)), and the n-type organic active layer region is, for example, PCBM (6,6-phenyl-C61-butyric acid methyl). ester). The hole transport layer is made of, for example, PEDOT: PSS.
　光電変換層３の形成に用いられる材質を例示すると、フタロシアニン（Ｐｃ:Phthalocyanine）、亜鉛フタロシアニン（ＺｎＰｃ:Zinc- phthalocyanine）、Ｍｅ－Ｐｔｃｄｉ（N,N’-dimethyl perylene-3,4,9,10-dicarboximide）、フラーレン（C 60 :Buckminster fullerene）が挙げられる。これらの材質は、たとえば真空蒸着に使用される。 Examples of materials used to form the photoelectric conversion layer 3 include phthalocyanine (Pc: Phthhalocyanine), zinc phthalocyanine (ZnPc: Zinc- phthalocyanine), Me-Ptcdi (N, N'-dimethyl perylene-3,4,9,10). -dicarboximide) and fullerene (C 60: Buckminster fullerene). These materials are used for vacuum deposition, for example.
　また、光電変換層３の形成に用いられる他の材質を例示すると、ＭＤＭＯ－ＰＰＶ（poly[2-methoxy-5-(3,7-dimethyl octyloxy)]-1,4-phenylene vinylene）、ＰＣＤＴＢＴ（poly[N-9’-hepta-decanyl-2,7-carbazole-alt-5,5-(4’,7’-di-thienyl-2’1’,3’-b3nzothiadizaole)]）、ＰＣ６０ＢＭ（6,6-phenyl-C61-butyric acid methyl ester）、ＰＣ７０ＢＭ（6,6-phenyl-C71-butyric acid methyl ester）が挙げられる。これらの材質は、たとえば溶液プロセルに使用される。 Other materials used for forming the photoelectric conversion layer 3 are exemplified by MDMO-PPV (poly [2-methoxy-5- (3,7-dimethyl-octyloxy)]-1,4-phenylene-vinylene), PCDTBT ( poly [N-9'-hepta-decanyl-2,7-carbazole-alt-5,5- (4 ', 7'-di-thienyl-2'1', 3'-b3nzothiadizaole)]), PC60BM (6 , 6-phenyl-C61-butyric acid methyl ester) and PC70BM (6,6-phenyl-C71-butyric acid methyl ester). These materials are used for, for example, a solution process.
　図２８は、光電変換層３を示す平面図である。図２０および図２８に示すように、光電変換層３は、複数の非発電領域３０、複数の発電領域３１および複数の意匠表示部３５を有している。なお、図２８においては、非発電領域３０および発電領域３１の境界を想像線（二点鎖線）によって便宜上示している。また、光電変換層３の非貫通部分に、複数の離散点からなるハッチングを付している。 FIG. 28 is a plan view showing the photoelectric conversion layer 3. As shown in FIGS. 20 and 28, the photoelectric conversion layer 3 has a plurality of non-power generation regions 30, a plurality of power generation regions 31, and a plurality of design display portions 35. In FIG. 28, the boundary between the non-power generation region 30 and the power generation region 31 is indicated by an imaginary line (two-dot chain line) for convenience. The non-penetrating portion of the photoelectric conversion layer 3 is hatched with a plurality of discrete points.
　意匠表示部３５は、第１導電層１を透して外観に表れる意匠を構成する部位である。意匠表示部３５が構成する意匠とは、使用者等が目視することによって、文字、記号、図柄などの視覚的特異部分として視認されうるものを指す。 The design display part 35 is a part that constitutes a design that appears through the first conductive layer 1 and appears on the exterior. The design which the design display part 35 comprises refers to what can be visually recognized as visually peculiar parts, such as a character, a symbol, and a design, when a user etc. look.
　本実施形態においては、意匠表示部３５は、貫通部３５０によって構成されている。貫通部３５０は、光電変換層３を厚さ方向に貫通する態様の部位である。このような貫通部３５０は、第１導電層１を透して外観に表れる。また、本実施形態においては、貫通部３５０は、第２導電層２を第１導電層１側に露出させている。すなわち、貫通部３５０を通じて第２導電層２の一部が外観に表れている。 In the present embodiment, the design display unit 35 is configured by a through-hole portion 350. The penetrating part 350 is a part having a mode of penetrating the photoelectric conversion layer 3 in the thickness direction. Such a penetrating portion 350 appears through the first conductive layer 1. In the present embodiment, the penetrating portion 350 exposes the second conductive layer 2 to the first conductive layer 1 side. That is, a part of the second conductive layer 2 appears on the exterior through the through part 350.
　本実施形態においては、計１２個の貫通部３５０（意匠表示部３５）が時刻を特定するためのローマ数字を表す態様とされている。また、ローマ数字の態様とされた計１２個の貫通部３５０に対して径方向外方に隣接する計１２個の貫通部３５０（意匠表示部３５）が菱型とされている。また、計２４個の貫通部３５０（意匠表示部３５）が、時刻を特定するための比較的小サイズの矩形状とされており、平面視円形状とされた光電変換層３の外周に沿って配置されている。 In the present embodiment, a total of twelve penetrating portions 350 (design display portions 35) represent Roman numerals for specifying time. In addition, a total of twelve penetrating portions 350 (design display portions 35) adjacent to the outer side in the radial direction with respect to a total of twelve penetrating portions 350 in the form of Roman numerals are diamond-shaped. In addition, a total of 24 penetrating portions 350 (design display portions 35) have a relatively small rectangular shape for specifying the time, and follow the outer periphery of the photoelectric conversion layer 3 having a circular shape in plan view. Are arranged.
　図２０および図２２に示すように、発電領域３１は、第１導電層１の第１電極部１１および第２導電層２の第２電極部２１に挟まれ、且つ光電変換機能を発揮することにより発電に寄与する領域である。また、発電領域３１の形状は、平面視において、第１電極部１１および第２電極部２１に一致する。本実施形態においては、６つの発電領域３１が同心円状に配置されている。 20 and 22, the power generation region 31 is sandwiched between the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2, and exhibits a photoelectric conversion function. This is a region that contributes to power generation. The shape of the power generation region 31 matches the first electrode part 11 and the second electrode part 21 in plan view. In the present embodiment, the six power generation regions 31 are arranged concentrically.
　非発電領域３０は、光電変換層３のうち平面視において第１導電層１の第１電極部１１および第２導電層２の第２電極部２１とは重ならない領域であり、第１区画部１２、第１連絡部１３、第１端部１４、開口１８およびスリット１９と重なっている。第１区画部１２、第１連絡部１３および第１端部１４は、第２導電層２の一部とそれぞれが接しており、集約された正孔と電子とが即座に結合してしまう。また、光電変換層３のうち開口１８およびスリット１９と重なる領域においては、光電変換の結果得られた正孔が第１導電層１には集約されない。このため、非発電領域３０は、発電に寄与しない。すなわち、光電変換層３のうち複数の発電領域３１以外の領域が、非発電領域３０とされている。 The non-power generation region 30 is a region of the photoelectric conversion layer 3 that does not overlap with the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 in plan view, and the first partition portion 12, the first connecting portion 13, the first end portion 14, the opening 18 and the slit 19 overlap. The first partition portion 12, the first connecting portion 13, and the first end portion 14 are in contact with a part of the second conductive layer 2, and the aggregated holes and electrons are immediately combined. In the region of the photoelectric conversion layer 3 that overlaps with the opening 18 and the slit 19, holes obtained as a result of photoelectric conversion are not collected in the first conductive layer 1. For this reason, the non-power generation region 30 does not contribute to power generation. That is, a region other than the plurality of power generation regions 31 in the photoelectric conversion layer 3 is a non-power generation region 30.
　また、図２０に示すように、複数の非発電領域３０は、複数の区画領域３２、複数の連絡領域３３および端部領域３４を含む。 Further, as shown in FIG. 20, the plurality of non-power generation areas 30 include a plurality of partition areas 32, a plurality of communication areas 33, and end areas 34.
　図２０および図２３に示すように、区画領域３２は、第１導電層１の第１区画部１２および第２導電層２の第２区画部２２に重なる領域である。区画領域３２は、貫通部３５０（意匠表示部３５）を有する。本実施形態においては、区画領域３２に含まれる貫通部３５０（意匠表示部３５）は、上述したローマ数字を表すものである。区画領域３２の貫通部３５０を通じて、第１導電層１の第１区画部１２と第２導電層２の第２区画部２２とは互いに接している。 20 and FIG. 23, the partition region 32 is a region that overlaps the first partition portion 12 of the first conductive layer 1 and the second partition portion 22 of the second conductive layer 2. The partition area 32 has a penetrating part 350 (design display part 35). In the present embodiment, the penetrating part 350 (design display part 35) included in the partition region 32 represents the Roman numerals described above. Through the through part 350 of the partition region 32, the first partition part 12 of the first conductive layer 1 and the second partition part 22 of the second conductive layer 2 are in contact with each other.
　図２０および図２４に示すように、複数の連絡領域３３は、第１導電層１の複数の第１連絡部１３および第２導電層２の複数の第２連絡部２３に挟まれた領域である。連絡領域３３は、貫通部３５０（意匠表示部３５）を有する。本実施形態においては、連絡領域３３に含まれる貫通部３５０（意匠表示部３５）は、上述したローマ数字を表すものである。連絡領域３３の貫通部３５０を通じて、第１導電層１の第１連絡部１３と第２導電層２の第２連絡部２３とは互いに接している。 As shown in FIGS. 20 and 24, the plurality of connection regions 33 are regions sandwiched between the plurality of first connection portions 13 of the first conductive layer 1 and the plurality of second connection portions 23 of the second conductive layer 2. is there. The communication area 33 has a penetrating part 350 (design display part 35). In the present embodiment, the penetrating part 350 (design display part 35) included in the communication area 33 represents the Roman numerals described above. Through the through part 350 of the communication region 33, the first connection part 13 of the first conductive layer 1 and the second connection part 23 of the second conductive layer 2 are in contact with each other.
　図２０および図２５に示すように、端部領域３４は、平面視において第１導電層１の第１端部１４に内包される貫通部３５０（意匠表示部３５）を含み、且つ第１導電層１の第１端部１４に重なっている。また、端部領域３４は、第２導電層２の第２端部２４と重なっている。第１導電層１の第１端部１４と第２導電層２の第２端部２４とは、端部領域３４の貫通部３５０を通じて接している。本実施形態においては、端部領域３４に含まれる貫通部３５０（意匠表示部３５）は、上述したローマ数字を表すものである。 As shown in FIGS. 20 and 25, the end region 34 includes a through portion 350 (design display portion 35) included in the first end portion 14 of the first conductive layer 1 in a plan view, and includes the first conductive layer. Overlapping the first end 14 of the layer 1. The end region 34 overlaps the second end 24 of the second conductive layer 2. The first end portion 14 of the first conductive layer 1 and the second end portion 24 of the second conductive layer 2 are in contact with each other through the through portion 350 of the end region 34. In this embodiment, the penetration part 350 (design display part 35) contained in the edge part area | region 34 represents the Roman numeral mentioned above.
　また、図２０に示すように、光電変換層３のうち第１導電層１の開口１８に内包された領域は、非発電領域３０とされている。 Further, as shown in FIG. 20, a region included in the opening 18 of the first conductive layer 1 in the photoelectric conversion layer 3 is a non-power generation region 30.
　第１導電層１の第１延出部１５および第２延出部１６は、平面視において光電変換層３から径方向外方に延出している。 The first extending portion 15 and the second extending portion 16 of the first conductive layer 1 extend radially outward from the photoelectric conversion layer 3 in plan view.
　上述した構成により、有機薄膜太陽電池モジュールＡ２は、６つの発電領域３１が互いに直列に接続された構成となっている。連結された経路を順に説明する。まず、第１延出部１５が１つの第１電極部１１に繋がっている。この第１電極部１１に対して発電領域３１を挟んで第２電極部２１が配置されている。この第２電極部２１に繋がる第２連絡部２３は、連絡領域３３の貫通部３５０を通じて第１連絡部１３に接している。この第１連絡部１３が繋がる第１電極部１１に対して、発電領域３１を挟んで次の第２電極部２１が配置されている。すなわち、第１連絡部１３、第２連絡部２３、連絡領域３３を挟んで、隣り合う発電領域３１同士が直列に接続されている。したがって、図中下方左側の発電領域３１から図中下方右側の発電領域３１までが直列に接続されている。そして、図中下方右側の発電領域３１と重なる第２電極部２１には、第２端部２４が繋がっている。第２端部２４は、端部領域３４の貫通部３５０を通じて第１端部１４と接している。第１端部１４には、第２延出部１６が繋がっている。この結果、第１延出部１５と第２延出部１６とが有機薄膜太陽電池モジュールＡ２の出力端子として機能する。第１延出部１５と第２延出部１６とは、図１９において駆動部７１に接続されている。 With the above-described configuration, the organic thin-film solar cell module A2 has a configuration in which the six power generation regions 31 are connected in series with each other. The connected paths will be described in order. First, the first extending portion 15 is connected to one first electrode portion 11. The second electrode portion 21 is arranged with respect to the first electrode portion 11 with the power generation region 31 interposed therebetween. The second connecting part 23 connected to the second electrode part 21 is in contact with the first connecting part 13 through the penetrating part 350 of the connecting region 33. With respect to the first electrode part 11 connected to the first connecting part 13, the next second electrode part 21 is arranged with the power generation region 31 interposed therebetween. That is, adjacent power generation regions 31 are connected in series with the first communication unit 13, the second communication unit 23, and the communication region 33 interposed therebetween. Therefore, the power generation region 31 on the lower left side in the drawing to the power generation region 31 on the lower right side in the drawing are connected in series. And the 2nd end part 24 is connected to the 2nd electrode part 21 which overlaps with the electric power generation area | region 31 of the lower right side in the figure. The second end portion 24 is in contact with the first end portion 14 through the through portion 350 of the end region 34. A second extending portion 16 is connected to the first end portion 14. As a result, the 1st extension part 15 and the 2nd extension part 16 function as an output terminal of organic thin film solar cell module A2. The first extension part 15 and the second extension part 16 are connected to the drive part 71 in FIG.
　図２２～図２５に示すように、パッシベーション膜４２は、第２導電層２上に積層されており、第２導電層２および光電変換層３を保護している。パッシベーション膜４２は、たとえばＳｉＮまたはＳｉＯＮからなる。パッシベーション膜４２の厚さは、たとえば０．５μｍ～２．０μｍであり、本実施形態においては、たとえば１．５μｍ程度とされる。すなわち、パッシベーション膜４２は、光電変換層３よりも厚く構成されている。これにより、光電変換層３に外部から水やパーティクル等が進入することを防止でき、且つ有機薄膜太陽電池モジュールＡ２の強度を向上させることができる。また、図２３～図２５に示すように、パッシベーション膜４２のうち意匠表示部３５を覆う部分と、光電変換層３のうち意匠表示部３５に隣接する部位を覆う部分とは、平坦に形成されている。これにより、パッシベーション膜４２に発生しうるクラック等の破壊をより防止でき、ひいては第２導電層２、光電変換層３、第１導電層１の破壊をより防止できる。なお、上述のような平坦なパッシベーション膜４２は、例えばパッシベーション膜４２が光電変換層３に対して厚い層とすること、また後述するＣＶＤを用いた手法によって形成されることにより形成することができ、これに限られない。 As shown in FIGS. 22 to 25, the passivation film 42 is laminated on the second conductive layer 2 and protects the second conductive layer 2 and the photoelectric conversion layer 3. The passivation film 42 is made of, for example, SiN or SiON. The thickness of the passivation film 42 is, for example, 0.5 μm to 2.0 μm. In the present embodiment, the thickness is, for example, about 1.5 μm. That is, the passivation film 42 is configured to be thicker than the photoelectric conversion layer 3. Thereby, it can prevent that a water, a particle, etc. approach from the exterior to the photoelectric converting layer 3, and can improve the intensity | strength of organic thin-film solar cell module A2. Further, as shown in FIGS. 23 to 25, the portion of the passivation film 42 covering the design display portion 35 and the portion of the photoelectric conversion layer 3 covering the portion adjacent to the design display portion 35 are formed flat. ing. Thereby, destruction of the crack etc. which may generate | occur | produce in the passivation film 42 can be prevented more, and also destruction of the 2nd conductive layer 2, the photoelectric converting layer 3, and the 1st conductive layer 1 can be prevented more. The flat passivation film 42 as described above can be formed, for example, by making the passivation film 42 thick with respect to the photoelectric conversion layer 3 or by a method using CVD described later. Not limited to this.
　接合層４３は、パッシベーション膜４２と保護層４４とを接合する層であり、たとえば樹脂系の接着剤層である。 The bonding layer 43 is a layer for bonding the passivation film 42 and the protective layer 44, and is, for example, a resin-based adhesive layer.
　保護層４４は、有機薄膜太陽電池モジュールＡ２を支持基板４１とは反対側から保護するためのものである。保護層４４は、好ましくはガラスからなるが、その他有機薄膜太陽電池モジュールＡ２を保護しうる透明な材質を適宜採用できる。保護層４４の厚さは、たとえば３０μｍ～１００μｍであり、本実施形態においては、たとえば５０μｍ程度とされる。 The protective layer 44 is for protecting the organic thin-film solar cell module A2 from the side opposite to the support substrate 41. The protective layer 44 is preferably made of glass, but other transparent materials that can protect the organic thin film solar cell module A2 can be appropriately employed. The thickness of the protective layer 44 is, for example, 30 μm to 100 μm. In the present embodiment, the thickness is, for example, about 50 μm.
　次に、有機薄膜太陽電池モジュールＡ２の製造方法について、図２９～図３２を参照しつつ以下に説明する。なお、これらの図においては、理解の便宜上、図２２～図２５とは、天地逆に表されている。また、図２２～図２５においては、図２０に示した有機薄膜太陽電池モジュールＡ２のＸＸＶ－ＸＸＶ線における断面構造を生成する過程を示している。 Next, a method for manufacturing the organic thin film solar cell module A2 will be described below with reference to FIGS. In these drawings, for convenience of understanding, FIGS. 22 to 25 are shown upside down. 22 to 25 show a process of generating a cross-sectional structure along the line XXV-XXV of the organic thin film solar cell module A2 shown in FIG.
　まず、図２９に示すように支持基板４１を用意する。そして、支持基板４１の片面にたとえばスパッタ法などの一般的な手法によりＩＴＯを成膜する。次いで、図３０に示すように、該ＩＴＯにパターニングを行うことにより第１導電層１を形成する。図２９と図３０とに示す行程を別々に行ってもよいし、一括して行ってもよい。ここで、ＩＴＯへのパターニング手法としては、たとえばウエットエッチングを用いた手法、酸素プラズマエッチングを用いた手法、レーザパターニングを用いた手法が適宜採用される。なお、第１導電層１は、上記に限られず、例えばナノインプリントを用いた手法によって、支持基板４１上に直接的にＩＴＯをパターニングすることで形成するようにしても良い。 First, a support substrate 41 is prepared as shown in FIG. Then, an ITO film is formed on one surface of the support substrate 41 by a general method such as sputtering. Next, as shown in FIG. 30, the first conductive layer 1 is formed by patterning the ITO. The steps shown in FIGS. 29 and 30 may be performed separately or collectively. Here, as a patterning technique to ITO, for example, a technique using wet etching, a technique using oxygen plasma etching, and a technique using laser patterning are appropriately employed. The first conductive layer 1 is not limited to the above. For example, the first conductive layer 1 may be formed by directly patterning ITO on the support substrate 41 by a technique using nanoimprint.
　次いで、図３１に示すように、光電変換層３を形成する。光電変換層３の形成は、たとえば、スピンコート塗布により支持基板４１上および第１導電層１上に有機膜を成膜した後に、酸素プラズマエッチング、レーザパターニングを用いることによって、所望の貫通部３５０（意匠表示部３５）を有する構成に仕上げることにより行う。なお、光電変換層３は、上記に限定されず、スリットコート法、キャピラリーコート法、グラビア印刷などの手法によって、支持基板４１上および第１導電層１上に直接的に有機膜をパターニングすることで形成するようにしても良い。 Next, as shown in FIG. 31, the photoelectric conversion layer 3 is formed. For example, the photoelectric conversion layer 3 is formed by forming an organic film on the support substrate 41 and the first conductive layer 1 by spin coating, and then using oxygen plasma etching and laser patterning to form a desired through-hole 350. This is done by finishing the structure having the (design display part 35). The photoelectric conversion layer 3 is not limited to the above, and an organic film is directly patterned on the support substrate 41 and the first conductive layer 1 by a method such as slit coating, capillary coating, or gravure printing. It may be formed by.
　次いで、図３２に示すように、第２導電層２を形成する。第２導電層２の形成は、たとえば上述した金属を真空加熱蒸着法によって支持基板４１、第１導電層１および光電変換層３上に金属膜を成膜する。次に、該金属膜に例えばマスク層を用いたエッチングを行うことによりパターニングを施す。このパターニングにより、第１導電層１上および光電変換層３上に第２導電層２を形成する。この後は、たとえばプラズマＣＶＤ法によってＳｉＮまたはＳｉＯＮを支持基板４１、第１導電層１、光電変換層３および第２導電層２上に成膜することにより、パッシベーション膜４２を形成する。そして、パッシベーション膜４２に接合層４３を用いて保護層４４を接合する。以上の工程を経ることにより、有機薄膜太陽電池モジュールＡ２が得られる。 Next, as shown in FIG. 32, the second conductive layer 2 is formed. The second conductive layer 2 is formed, for example, by forming a metal film on the support substrate 41, the first conductive layer 1 and the photoelectric conversion layer 3 using the above-described metal by vacuum heating vapor deposition. Next, the metal film is patterned by etching using, for example, a mask layer. By this patterning, the second conductive layer 2 is formed on the first conductive layer 1 and the photoelectric conversion layer 3. Thereafter, a passivation film 42 is formed by depositing SiN or SiON on the support substrate 41, the first conductive layer 1, the photoelectric conversion layer 3, and the second conductive layer 2 by, for example, a plasma CVD method. Then, the protective layer 44 is bonded to the passivation film 42 using the bonding layer 43. The organic thin film solar cell module A2 is obtained through the above steps.
　次に、有機薄膜太陽電池モジュールＡ２および電子機器Ｂ２の作用について説明する。 Next, the operation of the organic thin film solar cell module A2 and the electronic device B2 will be described.
　本実施形態に係る有機薄膜太陽電池モジュールＡ２および電子機器Ｂ２によれば、光電変換層３に意匠表示部３５を形成し、第１導電層１を透して外観に表れるようにしたので、有機薄膜太陽電池モジュールＡ２に追加の部材を積層させることや外側に印刷を施すことなどをすることなく、意匠表示部３５によって外観に表れる意匠を付与することができる。 According to the organic thin-film solar cell module A2 and the electronic device B2 according to the present embodiment, the design display portion 35 is formed on the photoelectric conversion layer 3 so as to be visible through the first conductive layer 1, so that the organic display The design appearing on the appearance can be given by the design display unit 35 without laminating additional members on the thin-film solar cell module A2 or printing the outside.
　また、本実施形態に係る有機薄膜太陽電池モジュールＡ２および電子機器Ｂ２によれば、意匠表示部３５を貫通部３５０によって構成するようにしたので、意匠をより明瞭に表すことができる。特に、貫通部３５０を通じて第２導電層２が外観に表れていることにより、第２導電層２と光電変換層３とのコントラストによって、意匠の鮮明化を図ることができる。 In addition, according to the organic thin film solar cell module A2 and the electronic device B2 according to the present embodiment, the design display unit 35 is configured by the through portion 350, so that the design can be expressed more clearly. In particular, the appearance of the second conductive layer 2 through the through portion 350 allows the design to be clarified by the contrast between the second conductive layer 2 and the photoelectric conversion layer 3.
　また、本実施形態に係る有機薄膜太陽電池モジュールＡ２および電子機器Ｂ２によれば、第１導電層１においてスリット１９により第１電極部１１と第１区画部１２を離間させ、平面視において第１区画部１２に重なる非発電領域３０に意匠表示部３５を形成するようにしたので、光電変換層３を貫通させた貫通部３５０により意匠表示部３５を構成するようにした場合に、第１電極部１１と第２電極部２１とが意図せずしてショートすることを防止することができる。 Moreover, according to the organic thin film solar cell module A2 and the electronic device B2 according to the present embodiment, the first electrode portion 11 and the first partitioning portion 12 are separated from each other by the slit 19 in the first conductive layer 1, and the first in a plan view. Since the design display part 35 is formed in the non-power generation region 30 overlapping the partition part 12, when the design display part 35 is configured by the penetrating part 350 penetrating the photoelectric conversion layer 3, the first electrode It is possible to prevent the part 11 and the second electrode part 21 from being unintentionally short-circuited.
　第１連絡部１３、第２連絡部２３および連絡領域３３を設けることにより、隣り合う発電領域３１を直列に接続することが可能である。これにより、有機薄膜太陽電池モジュールＡ２から出力する電圧を所望の値に高めることができる。また、連絡領域３３に内包された貫通部３５０は、時刻を特定するためのローマ数字とされている。このため、連絡領域３３およびこれに含まれる貫通部３５０は、複数の発電領域３１を直列に接続する機能を果たしつつ、時計として用いられる場合に必須となる意匠を表す領域を兼ねており、合理的である。 It is possible to connect the adjacent power generation regions 31 in series by providing the first communication unit 13, the second communication unit 23, and the communication region 33. Thereby, the voltage output from organic thin-film solar cell module A2 can be raised to a desired value. Moreover, the penetration part 350 included in the communication area 33 is a Roman numeral for specifying the time. For this reason, the communication region 33 and the penetrating part 350 included therein serve as a region representing a design that is essential when used as a watch while fulfilling the function of connecting a plurality of power generation regions 31 in series. Is.
　第１端部１４、第２端部２４および端部領域３４を設けることにより、直列に接続された複数の発電領域３１のうち一端の発電領域３１と他端の３１とを隣接して設けることが可能である。また、第１延出部１５および第２延出部１６を備えることにより、発電領域３１の面積を不当に減少させることなく、発電領域３１からの電力を取り出すことができる。 By providing the first end portion 14, the second end portion 24, and the end region 34, the power generation region 31 at one end and the other end 31 among the plurality of power generation regions 31 connected in series are provided adjacent to each other. Is possible. Moreover, the electric power from the electric power generation area | region 31 can be taken out, without reducing the area of the electric power generation area | region 31 by providing the 1st extension part 15 and the 2nd extension part 16 unreasonably.
　図３３～図４２は、本発明の変形例および他の実施形態を示している。なお、これらの図において、上記実施形態と同一または類似の要素には、上記実施形態と同一の符号を付している。 33 to 42 show a modified example and other embodiments of the present invention. In these drawings, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment.
　図３３～図３５は、有機薄膜太陽電池モジュールＡ２の変形例を示している。本変形例においては、光電変換層３に設けられた発電領域３１の個数が１つである場合を示している。図３３は、本変形例の有機薄膜太陽電池モジュールＡ２を示す平面図であり、図３４は、本変形例の第１導電層１を示す平面図であり、図３５は、本変形例の第２導電層２を示す平面図であり、図３６は、本変形例の光電変換層３を示す平面図である。 33 to 35 show modified examples of the organic thin film solar cell module A2. In this modification, the case where the number of the electric power generation area | regions 31 provided in the photoelectric converting layer 3 is one is shown. FIG. 33 is a plan view showing the organic thin-film solar cell module A2 of this modification, FIG. 34 is a plan view showing the first conductive layer 1 of this modification, and FIG. FIG. 36 is a plan view showing a photoelectric conversion layer 3 of the present modification.
　第１導電層１は、１つの第１電極部１１、１１個の第１区画部１２、第１端部１４、第１延出部１５および第２延出部１６を有している。第１導電層１は、上述した例における第１連絡部１３を有していない。 The first conductive layer 1 has one first electrode part 11, eleven first partition parts 12, a first end part 14, a first extension part 15, and a second extension part 16. The 1st conductive layer 1 does not have the 1st connection part 13 in the example mentioned above.
　第２導電層２は、第１導電層１の構成に対応して、１つの第２電極部２１、１１個の第２区画部２２および第２端部２４を有する。 The second conductive layer 2 has one second electrode portion 21, eleven second partition portions 22, and second end portions 24 corresponding to the configuration of the first conductive layer 1.
　光電変換層３は、１つの発電領域３１、１１個の区画領域３２、端部領域３４を有する。 The photoelectric conversion layer 3 has one power generation region 31, eleven partition regions 32, and an end region 34.
　このような構成の有機薄膜太陽電池モジュールＡ２においては、１つの発電領域３１が発電した電力が第１延出部１５および第２延出部１６から出力される。 In the organic thin film solar cell module A2 having such a configuration, the power generated by one power generation region 31 is output from the first extension portion 15 and the second extension portion 16.
　このような変形例によっても、有機薄膜太陽電池モジュールＡ２に追加の部材を積層させることや外側に印刷を施すことなどをすることなく、意匠表示部３５によって外観に表れる意匠を付与することができる。 Also by such a modification, the design which appears in the external appearance can be given by the design display part 35, without laminating | stacking an additional member on the organic thin-film solar cell module A2 or printing outside. .
　なお、１つの発電領域３１が設けられた構成に代えて、複数の発電領域３１が並列に接続された構成を採用してもよい。この場合、たとえば複数の第１電極部１１が互いに導通し、且つ複数の第２電極部２１が互いに導通する構成とすればよい。 Note that a configuration in which a plurality of power generation regions 31 are connected in parallel may be employed instead of the configuration in which one power generation region 31 is provided. In this case, for example, the plurality of first electrode portions 11 may be electrically connected to each other, and the plurality of second electrode portions 21 may be electrically connected to each other.
　図３７および図３８は、本発明の第３実施形態に基づく電子機器を示している。本実施形態のＢ３は、いわゆる電子計算機として構成されている。 37 and 38 show an electronic apparatus based on the third embodiment of the present invention. B3 of this embodiment is configured as a so-called electronic computer.
　電子機器Ｂ３は、有機薄膜太陽電池モジュールＡ３、ケース６１、駆動部７１、表示部７４および入力部７５を備えている。 The electronic device B3 includes an organic thin film solar cell module A3, a case 61, a drive unit 71, a display unit 74, and an input unit 75.
　有機薄膜太陽電池モジュールＡ３は、電子機器Ｂ３の発電装置である。ケース６１は、薄型の矩形状部材であり、有機薄膜太陽電池モジュールＡ３、駆動部７１、表示部７４および入力部７５を収容する。 Organic thin-film solar cell module A3 is a power generator for electronic device B3. The case 61 is a thin rectangular member, and houses the organic thin film solar cell module A3, the drive unit 71, the display unit 74, and the input unit 75.
　駆動部７１は、有機薄膜太陽電池モジュールＡ３から給電されることにより、演算機能を果たす。また、入力部７５からの入力信号を演算機能に反映させる。また、演算機能に係る情報を表示部７４に表示させる。 The driving unit 71 performs a calculation function by being fed from the organic thin film solar cell module A3. Further, the input signal from the input unit 75 is reflected in the calculation function. In addition, information related to the calculation function is displayed on the display unit 74.
　表示部７４は、演算機能に係る情報が表示される部位であり、たとえば液晶ディスプレイである。入力部７５は、演算を行うための入力がなされる部位であり、たとえばタッチセンサ等からなる。また、本実施形態においては、入力部７５を目視によって識別するために、意匠表示部３５が入力部７５を構成している。 The display unit 74 is a part where information related to the calculation function is displayed, and is a liquid crystal display, for example. The input unit 75 is a part where an input for performing a calculation is made, and is composed of, for example, a touch sensor. In the present embodiment, the design display unit 35 constitutes the input unit 75 in order to visually identify the input unit 75.
　図３９は、本実施形態の有機薄膜太陽電池モジュールＡ３を示している。有機薄膜太陽電池モジュールＡ３は、１つの発電領域３１において発電された電力を第１延出部１５および第２延出部１６から出力する構成とされている。 FIG. 39 shows the organic thin film solar cell module A3 of the present embodiment. The organic thin film solar cell module A3 is configured to output the power generated in one power generation region 31 from the first extension portion 15 and the second extension portion 16.
　図４０は、本実施形態の第１導電層１を示す平面図である。図４１は、本実施形態の第２導電層２を示す平面図である。図４２は、本実施形態の光電変換層３を示す平面図である。 FIG. 40 is a plan view showing the first conductive layer 1 of the present embodiment. FIG. 41 is a plan view showing the second conductive layer 2 of the present embodiment. FIG. 42 is a plan view showing the photoelectric conversion layer 3 of the present embodiment.
　第１導電層１には、矩形状の開口１８が形成され、第２導電層２には、矩形状の開口２８が形成され、光電変換層３には、矩形状の開口３８が形成されている。これらの開口１８、開口２８および開口３８は、表示部７４を外観に表すためのものである。なお、開口１８および開口２８は、開口３８よりも若干大とされている。この結果、光電変換層３のうち開口１８および開口２８に内包された領域は、非発電領域３０とされている。 A rectangular opening 18 is formed in the first conductive layer 1, a rectangular opening 28 is formed in the second conductive layer 2, and a rectangular opening 38 is formed in the photoelectric conversion layer 3. Yes. The opening 18, the opening 28, and the opening 38 are for representing the display unit 74 in appearance. Note that the opening 18 and the opening 28 are slightly larger than the opening 38. As a result, a region included in the opening 18 and the opening 28 in the photoelectric conversion layer 3 is a non-power generation region 30.
　図４２に示すように、光電変換層３には、複数の貫通部３５０（意匠表示部３５）が形成されている。図中下方に設けられた複数の貫通部３５０は、各々が数字や算術記号を表しており、入力部７５の各部に対応するように配置されている。図４０に示すように、第１導電層１には、図中下方に位置する複数の開口１８が形成されている。これらの開口１８は、数字や算術記号を表す複数の３５０を内包する大きさおよび形状とされている。この結果、光電変換層３のうちこれらの開口１８に内包された領域は、非発電領域３０とされている。 42, the photoelectric conversion layer 3 has a plurality of penetrating portions 350 (design display portions 35). Each of the plurality of penetrating portions 350 provided in the lower part of the figure represents a number or an arithmetic symbol, and is arranged so as to correspond to each part of the input unit 75. As shown in FIG. 40, the first conductive layer 1 is formed with a plurality of openings 18 positioned below in the drawing. These openings 18 are sized and shaped to contain a plurality of 350 representing numbers and arithmetic symbols. As a result, a region included in these openings 18 in the photoelectric conversion layer 3 is a non-power generation region 30.
　また、図４２に示すように、図中上方右側に複数の貫通部３５０（意匠表示部３５）が設けられている。これらの貫通部３５０は、文字や記号あるいは図柄を表している。このような態様の貫通部３５０は、たとえば企業名や製品名などを表すために用いられる。 Further, as shown in FIG. 42, a plurality of penetrating portions 350 (design display portions 35) are provided on the upper right side in the drawing. These penetrating portions 350 represent characters, symbols, or designs. The penetrating portion 350 having such an aspect is used, for example, to represent a company name or a product name.
　図３９および図４０に示すように、第１導電層１は、図中上方右側に第１端部１４が設けられている。上述した光電変換層３の図中上方右側の複数の貫通部３５０は、平面視において第１端部１４に内包されている。これにより、光電変換層３のうち第１端部１４に重なる領域が端部領域３４とされている。また、第２導電層２のうち第１端部１４に重なる領域が第２端部２４とされている。 As shown in FIGS. 39 and 40, the first conductive layer 1 has a first end portion 14 on the upper right side in the drawing. The plurality of through portions 350 on the upper right side of the photoelectric conversion layer 3 described above are included in the first end portion 14 in plan view. As a result, the region of the photoelectric conversion layer 3 that overlaps the first end portion 14 is defined as the end region 34. A region of the second conductive layer 2 that overlaps the first end 14 is a second end 24.
　このような実施形態によっても、有機薄膜太陽電池モジュールＡ３に追加の部材を積層させることや外側に印刷を施すことなどをすることなく、意匠表示部３５によって外観に表れる意匠を付与することができる。 Even in such an embodiment, the design appearing on the appearance can be given by the design display unit 35 without laminating an additional member on the organic thin-film solar cell module A3 or printing on the outside. .
　図４３は、本発明の第４実施形態に基づく有機薄膜太陽電池モジュールを示している。本実施形態の有機薄膜太陽電池モジュールＡ４は、光電変換層３の意匠表示部３５が薄肉部３５１によって構成されたものを含む。 FIG. 43 shows an organic thin-film solar cell module according to the fourth embodiment of the present invention. The organic thin-film solar cell module A4 of this embodiment includes a structure in which the design display portion 35 of the photoelectric conversion layer 3 is configured by a thin portion 351.
　薄肉部３５１は、周辺よりも薄肉とされた部位である。薄肉部３５１が設けられることによって生じる段差が、目視によって視認可能な形状を実現し、意匠表示部３５が表示させるべき意匠を構成する。 The thin portion 351 is a portion that is thinner than the periphery. The level difference caused by the provision of the thin portion 351 realizes a shape that can be visually recognized, and constitutes a design that the design display unit 35 should display.
　光電変換層３のうち支持基板４１側の面は平坦であり、薄肉部３５１による段差は、支持基板４１とは反対側に設けられる。このため、本実施形態においては、支持基板４１に第２導電層２が形成され、光電変換層３を介して第１導電層１が積層されている。そして、本実施形態においては、太陽光は図中下側から向かってくる。 The surface of the photoelectric conversion layer 3 on the support substrate 41 side is flat, and a step due to the thin portion 351 is provided on the side opposite to the support substrate 41. For this reason, in this embodiment, the 2nd conductive layer 2 is formed in the support substrate 41, and the 1st conductive layer 1 is laminated | stacked through the photoelectric converting layer 3. FIG. And in this embodiment, sunlight comes from the lower side in the figure.
　このような実施形態によっても、有機薄膜太陽電池モジュールＡ４に追加の部材を積層させることや外側に印刷を施すことなどをすることなく、意匠表示部３５によって外観に表れる意匠を付与することができる。 Also by such embodiment, the design which appears in the external appearance by the design display part 35 can be provided without laminating | stacking an additional member on the organic thin-film solar cell module A4, or performing printing on the outer side. .
　本発明に係る有機薄膜太陽電池モジュールおよび電子機器は、上述した実施形態に限定されるものではない。本発明に係る有機薄膜太陽電池モジュールおよび電子機器の各部の具体的な構成は、種々に設計変更自在である。 The organic thin film solar cell module and the electronic device according to the present invention are not limited to the above-described embodiments. The specific configuration of each part of the organic thin-film solar cell module and the electronic device according to the present invention can be varied in design in various ways.
　以下に、本発明の技術的特徴について付記する。 The technical features of the present invention will be described below.
　　〔付記１Ａ〕
　透明な第１導電層と、
　第２導電層と、
　前記第１導電層および前記第２導電層に挟まれた有機薄膜からなる光電変換層と、を備え、
　前記光電変換層は、前記第１導電層を透して外観に表れる意匠を構成する１以上の意匠表示部を有する、有機薄膜太陽電池モジュール。
　　〔付記２Ａ〕
　前記第１導電層が積層された、透明な支持基板を備える、付記１Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記３Ａ〕
　前記第２導電層を覆うパッシベーション膜を備える、付記１Ａまたは２Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記４Ａ〕
　前記パッシベーション膜は、前記意匠表示部を覆っている、付記３Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記５Ａ〕
　前記パッシベーション膜は、前記意匠表示部を覆う部分と前記光電変換層のうち前記意匠表示部に隣接する部位を覆う部分とが、平坦に形成されている、付記４Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記６Ａ〕
　前記パッシベーション膜の厚さは、前記光電変換層の厚さよりも厚い、付記３Ａないし５Ａのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記７Ａ〕
　前記パッシベーション膜に積層された保護層を備える、付記３Ａないし６Ａのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記８Ａ〕
　前記パッシベーション膜と前記保護層とを接合する接合層を備える、付記７Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記９Ａ〕
　前記第１導電層は、ＩＴＯからなる、付記１Ａないし８Ａのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１０Ａ〕
　前記第２導電層は、金属からなる、付記１Ａないし９Ａのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１１Ａ〕
　前記第２導電層は、Ａｌからなる、付記１０Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記１２Ａ〕
　前記意匠表示部は、前記光電変換層を厚さ方向に貫通する貫通部によって構成されている、付記１Ａないし１１Ａのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１３Ａ〕
　前記意匠表示部は、周囲よりも薄肉とされた薄肉部によって構成されている、付記１Ａないし１１Ａのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１４Ａ〕
　前記第１導電層は、第１電極部を有し、
　前記第２導電層は、平面視において前記第１電極部と一致する第２電極部を有し、
　前記光電変換層は、前記第１電極部および前記第２電極部に挟まれ、且つ光電変換機能を発揮することにより発電に寄与する発電領域を有する、付記１２Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記１５Ａ〕
　前記光電変換層は、平面視において前記第１電極部および前記第２電極部とは重ならず、且つ発電に寄与しない非発電領域を有する、付記１４Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記１６Ａ〕
　　前記第１導電層は、平面視において前記意匠表示部を内包し、且つ厚さ方向に貫通するスリットによって囲まれた第１区画部を有する、付記１５Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記１７Ａ〕
　　前記光電変換層の前記非発電領域は、前記第１導電層の前記第１区画部に重なる領域である区画領域を有する、付記１６Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記１８Ａ〕
　　前記光電変換層の前記区画領域に含まれる前記意匠表示部を通じて前記第１導電層と前記第２導電層とが接している、付記１７Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記１９Ａ〕
　前記第１導電層は、スリットを挟んで隣り合う２つの前記第１電極部を有し、
　前記第２導電層は、平面視において前記２つの第１電極部と一致する２つの前記第２電極部を有し、
　前記光電変換層は、前記２つの第１電極部および前記２つの第２電極部に挟まれた２つの前記発電領域を有する、付記１５Ａないし１８Ａのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２０Ａ〕
　前記２つの発電領域は、互いに直列に接続されている、付記１９Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記２１Ａ〕
　前記２つの発電領域は、互いに並列に接続されている、付記１９Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記２２Ａ〕
　前記第１導電層は、前記２つの第１電極部の一方に繋がり、且つ前記スリットを挟んで前記２つの第１電極部の他方に隣り合う第１連絡部を有し、
　前記第２導電層は、前記２つの第１電極部の他方と平面視において一致する前記第２電極部に繋がり、且つ前記スリットを挟んで前記２つの第２電極部のもう一方に隣り合うとともに、前記第１連絡部と接する第２連絡部を有し、
　前記光電変換層の前記非発電領域は、前記第１連絡部および前記第２連絡部に挟まれた連絡領域を含む、付記２０Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記２３Ａ〕
　前記連絡領域は、前記意匠表示部を含んでおり、
　前記第１連絡部と前記第２連絡部とは、前記連絡領域に含まれた前記意匠表示部を通じて接している、付記２２Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記２４Ａ〕
　前記第１導電層は、同心円状に配置された複数の前記第１電極部と前記第１連絡部とを有し、
　前記第２導電層は、同心円状に配置された複数の前記第２電極部と前記第２連絡部とを有し、
　前記光電変換層は、同心円状に配置された複数の前記発電領域と複数の前記連絡領域とを有する、付記２３Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記２５Ａ〕
　前記第１導電層は、前記第１電極部Ａのいずれか１の第１電極部から、平面視において前記光電変換層の外方に延出する第１延出部を有している、付記１５Ａないし２４Ａのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２６Ａ〕
　前記第１導電層は、前記第１延出部に繋がる前記第１電極部と該第１電極部に隣り合う前記第１電極部とにスリットを介して挟まれた第１端部を有し、
　前記光電変換層は、平面視において前記第１端部に内包される前記意匠表示部を含み、且つ前記第１端部に重なる端部領域を有し、
　前記第２導電層は、平面視において第１端部に一致し、且つ隣接する第２電極部に繋がるとともに、前記端部領域の前記意匠表示部を通じて前記第１端部に接する第２端部を有する、付記２５Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記２７Ａ〕
　前記第１導電層は、前記第１端部から、平面視において前記光電変換層の外方に延出する第２延出部を有している、付記２６Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記２８Ａ〕
　前記連絡領域に含まれる前記意匠表示部は、時刻を特定ための文字を表す、付記２２Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記２９Ａ〕
　前記区画領域に含まれる前記意匠表示部は、時刻を特定ための文字を表す、付記１８Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記３０Ａ〕
　前記第１導電層は、平面視において前記意匠表示部を内包する開口を有しており、
　前記光電変換層のうち前記第１導電層の前記開口に一致する部位が前記非発電領域とされている、付記１５Ａないし２９Ａのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記３１Ａ〕
　前記開口に内包される前記意匠表示部は、時刻を特定するための図形を表す、付記３０Ａに記載の有機薄膜太陽電池モジュール。
　　〔付記３２Ａ〕
　付記１Ａないし３１Ａのいずれかに記載の有機薄膜太陽電池モジュールと、
　前記有機薄膜太陽電池モジュールからの給電によって駆動する駆動部と、
を備える、電子機器。
　　〔付記３３Ａ〕
　前記駆動部によって駆動される長針および短針を備えており、
　時計として構成された、付記３２Ａに記載の電子機器。
　　〔付記３４Ａ〕
　前記駆動部は、演算機能を有しており、
　前記駆動部による演算結果を表示する表示部を備えており、
　電子計算機として構成された、付記３２Ａに記載の電子機器。 [Appendix 1A]
A transparent first conductive layer;
A second conductive layer;
A photoelectric conversion layer comprising an organic thin film sandwiched between the first conductive layer and the second conductive layer,
The said photoelectric conversion layer is an organic thin-film solar cell module which has a 1 or more design display part which comprises the design which appears through the said 1st conductive layer and appears on an external appearance.
[Appendix 2A]
The organic thin-film solar cell module according to Appendix 1A, comprising a transparent support substrate on which the first conductive layer is laminated.
[Appendix 3A]
The organic thin-film solar cell module according to appendix 1A or 2A, comprising a passivation film that covers the second conductive layer.
[Appendix 4A]
The said passivation film is an organic thin-film solar cell module of Additional remark 3A which has covered the said design display part.
[Appendix 5A]
The organic thin-film solar cell module according to appendix 4A, wherein the passivation film is formed so that a portion covering the design display portion and a portion covering the portion adjacent to the design display portion in the photoelectric conversion layer are formed flat. .
[Appendix 6A]
The thickness of the said passivation film is an organic thin-film solar cell module in any one of appendix 3A thru | or 5A thicker than the thickness of the said photoelectric converting layer.
[Appendix 7A]
The organic thin-film solar cell module according to any one of appendices 3A to 6A, comprising a protective layer laminated on the passivation film.
[Appendix 8A]
The organic thin film solar cell module according to appendix 7A, comprising a bonding layer that bonds the passivation film and the protective layer.
[Appendix 9A]
The organic thin film solar cell module according to any one of Supplementary Notes 1A to 8A, wherein the first conductive layer is made of ITO.
[Appendix 10A]
The organic thin-film solar cell module according to any one of Supplementary Notes 1A to 9A, wherein the second conductive layer is made of metal.
[Appendix 11A]
The organic thin film solar cell module according to attachment 10A, wherein the second conductive layer is made of Al.
[Appendix 12A]
The said design display part is an organic thin-film solar cell module in any one of additional remarks 1A thru | or 11A comprised by the penetration part which penetrates the said photoelectric converting layer in the thickness direction.
[Appendix 13A]
The said design display part is an organic thin-film solar cell module in any one of additional remarks 1A thru | or 11A comprised by the thin part made thinner than the circumference | surroundings.
[Appendix 14A]
The first conductive layer has a first electrode portion,
The second conductive layer has a second electrode portion that coincides with the first electrode portion in plan view,
The organic thin-film solar cell module according to appendix 12A, wherein the photoelectric conversion layer includes a power generation region that is sandwiched between the first electrode portion and the second electrode portion and contributes to power generation by exhibiting a photoelectric conversion function.
[Appendix 15A]
The organic thin-film solar cell module according to appendix 14A, wherein the photoelectric conversion layer has a non-power generation region that does not overlap the first electrode portion and the second electrode portion in plan view and does not contribute to power generation.
[Appendix 16A]
The organic thin-film solar cell module according to appendix 15A, wherein the first conductive layer includes a first partition part that includes the design display part in a plan view and is surrounded by a slit that penetrates in the thickness direction.
[Appendix 17A]
The organic thin-film solar cell module according to appendix 16A, wherein the non-power generation region of the photoelectric conversion layer has a partition region that is a region overlapping the first partition portion of the first conductive layer.
[Appendix 18A]
The organic thin-film solar cell module according to appendix 17A, wherein the first conductive layer and the second conductive layer are in contact with each other through the design display portion included in the partition region of the photoelectric conversion layer.
[Appendix 19A]
The first conductive layer has two first electrode portions adjacent to each other across a slit,
The second conductive layer has two second electrode portions that coincide with the two first electrode portions in plan view,
The organic thin-film solar cell module according to any one of appendices 15A to 18A, wherein the photoelectric conversion layer has two power generation regions sandwiched between the two first electrode portions and the two second electrode portions.
[Appendix 20A]
The organic thin-film solar cell module according to appendix 19A, wherein the two power generation regions are connected in series with each other.
[Appendix 21A]
The organic thin film solar cell module according to appendix 19A, wherein the two power generation regions are connected in parallel to each other.
[Appendix 22A]
The first conductive layer includes a first connecting portion that is connected to one of the two first electrode portions and that is adjacent to the other of the two first electrode portions with the slit interposed therebetween.
The second conductive layer is connected to the second electrode portion that coincides in plan view with the other of the two first electrode portions, and is adjacent to the other of the two second electrode portions with the slit interposed therebetween. , Having a second communication part in contact with the first communication part,
The organic thin-film solar cell module according to appendix 20A, wherein the non-power generation region of the photoelectric conversion layer includes a communication region sandwiched between the first communication unit and the second communication unit.
[Appendix 23A]
The contact area includes the design display portion,
The organic thin-film solar cell module according to appendix 22A, wherein the first contact portion and the second contact portion are in contact with each other through the design display portion included in the contact region.
[Appendix 24A]
The first conductive layer has a plurality of the first electrode portions and the first connecting portions arranged concentrically,
The second conductive layer has a plurality of the second electrode portions and the second connecting portions arranged concentrically,
The organic thin-film solar cell module according to Appendix 23A, wherein the photoelectric conversion layer includes a plurality of the power generation regions and a plurality of the connection regions arranged concentrically.
[Appendix 25A]
The first conductive layer has a first extending portion that extends from the first electrode portion of any one of the first electrode portions A to the outside of the photoelectric conversion layer in a plan view. The organic thin-film solar cell module according to any one of 15A to 24A.
[Appendix 26A]
The first conductive layer has a first end sandwiched between the first electrode part connected to the first extension part and the first electrode part adjacent to the first electrode part via a slit. ,
The photoelectric conversion layer includes an end region that includes the design display unit included in the first end in a plan view and overlaps the first end,
The second conductive layer coincides with the first end portion in a plan view and is connected to the adjacent second electrode portion, and is in contact with the first end portion through the design display portion in the end region. The organic thin-film solar cell module according to Supplementary Note 25A.
[Appendix 27A]
The organic thin-film solar cell module according to appendix 26A, wherein the first conductive layer has a second extending portion that extends outward from the photoelectric conversion layer in a plan view from the first end portion.
[Appendix 28A]
The organic thin-film solar cell module according to Supplementary Note 22A, in which the design display unit included in the contact region represents a character for specifying time.
[Appendix 29A]
The organic thin-film solar cell module according to appendix 18A, wherein the design display unit included in the partition region represents a character for specifying time.
[Appendix 30A]
The first conductive layer has an opening that includes the design display portion in a plan view;
The organic thin-film solar cell module according to any one of Supplementary Notes 15A to 29A, wherein a portion of the photoelectric conversion layer that coincides with the opening of the first conductive layer is the non-power generation region.
[Appendix 31A]
30. The organic thin-film solar cell module according to Supplementary Note 30A, wherein the design display unit included in the opening represents a graphic for specifying time.
[Appendix 32A]
An organic thin film solar cell module according to any one of Supplementary Notes 1A to 31A;
A drive unit driven by feeding from the organic thin film solar cell module;
An electronic device.
[Appendix 33A]
Comprising a long hand and a short hand driven by the drive unit;
The electronic device according to attachment 32A, configured as a timepiece.
[Appendix 34A]
The drive unit has a calculation function,
A display unit for displaying a calculation result by the drive unit;
The electronic device according to attachment 32A, configured as an electronic computer.
［第５－第６実施形態］
　第５および第６実施形態および図４４～図６７における符号は、これらの実施形態および図において有効であり、他の実施形態および図における符号とは独立している。ただし、第５および第６実施形態の具体的構成と他の実施形態の具体的構成とは、相互に適宜組合せ可能である。 [Fifth to sixth embodiments]
The reference numerals in the fifth and sixth embodiments and FIGS. 44 to 67 are valid in these embodiments and figures, and are independent of the reference numerals in the other embodiments and figures. However, the specific configurations of the fifth and sixth embodiments and the specific configurations of the other embodiments can be appropriately combined with each other.
　本発明において、「透明」とは、透過率が約５０％以上であるものと定義する。また「透明」とは、可視光線に対して、無色透明という意味でも使用する。可視光線は波長約３６０ｎｍ～８３０ｎｍ程度、エネルギー約３．４５ｅＶ～１．４９ｅＶ程度に相当し、この領域で透過率が５０％以上あれば透明である。 In the present invention, “transparent” is defined as having a transmittance of about 50% or more. “Transparent” is also used to mean colorless and transparent to visible light. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.
　図４４～図４８は、本発明の第５実施形態に基づく電子機器および本発明の第５および第６実施形態に基づく有機薄膜太陽電池モジュールを示している。本実施形態の電子機器Ｂ５は、有機薄膜太陽電池モジュールＡ５、有機薄膜太陽電池モジュールＡ６、ケース６１、制御部７０１、表示部７０２、入力部７０３、マイク７０４、スピーカ７０５、無線通信部７０６およびバッテリ７０７を備えており、携帯型電話端末として構成されている。 44 to 48 show an electronic device based on the fifth embodiment of the present invention and an organic thin film solar cell module based on the fifth and sixth embodiments of the present invention. The electronic device B5 of this embodiment includes an organic thin film solar cell module A5, an organic thin film solar cell module A6, a case 61, a control unit 701, a display unit 702, an input unit 703, a microphone 704, a speaker 705, a wireless communication unit 706, and a battery. 707 is configured as a portable telephone terminal.
　ケース６１は、電子機器Ｂ５のその他の構成要素を収容するものであり、金属、樹脂、ガラスなどの材質からなる。 The case 61 accommodates other components of the electronic device B5 and is made of a material such as metal, resin, or glass.
　図４４は、有機薄膜太陽電池モジュールＡ５，Ａ６およびこれらを用いた電子機器Ｂ５を示す平面図である。図４５は、有機薄膜太陽電池モジュールＡ５，Ａ６および電子機器Ｂ５を示す底面図である。図４６は、図４４のＸＬＶＩ－ＸＬＶＩ線に沿う模式的な断面図である。図４７は、図４４のＸＬＶＩＩ－ＸＬＶＩＩ線に沿う要部拡大断面図である。図４８は、電子機器Ｂ５を示すシステム構成図である。なお、図４６においては、理解の便宜上、ケース６１、有機薄膜太陽電池モジュールＡ５、有機薄膜太陽電池モジュールＡ６、制御部７０１、表示部７０２およびバッテリ７０７のみを模式的に示している。 FIG. 44 is a plan view showing organic thin-film solar cell modules A5 and A6 and electronic equipment B5 using them. FIG. 45 is a bottom view showing the organic thin-film solar cell modules A5 and A6 and the electronic device B5. FIG. 46 is a schematic sectional view taken along line XLVI-XLVI of FIG. 47 is an enlarged cross-sectional view of a main part taken along the line XLVII-XLVII in FIG. FIG. 48 is a system configuration diagram showing the electronic apparatus B5. In FIG. 46, only the case 61, the organic thin film solar cell module A5, the organic thin film solar cell module A6, the control unit 701, the display unit 702, and the battery 707 are schematically shown for convenience of understanding.
　有機薄膜太陽電池モジュールＡ５および有機薄膜太陽電池モジュールＡ６は、電子機器Ｂ５における電源モジュールであり、太陽光などの光を電力に変換する。具体的構成は、後述する。 Organic thin film solar cell module A5 and organic thin film solar cell module A6 are power supply modules in electronic device B5, and convert light such as sunlight into electric power. A specific configuration will be described later.
　制御部７０１は、本発明でいう駆動部の一例に相当し、有機薄膜太陽電池モジュールＡ５および有機薄膜太陽電池モジュールＡ６からの給電によって駆動する。なお、制御部７０１は、有機薄膜太陽電池モジュールＡ５および有機薄膜太陽電池モジュールＡ６からｎ直接給電されてもよいし、有機薄膜太陽電池モジュールＡ５および有機薄膜太陽電池モジュールＡ６からの電力がバッテリ７０７に一旦充電された後に、このバッテリ７０７からの給電によって駆動されてもよい。制御部７０１は、たとえばＣＰＵ、メモリおよびインターフェースなどを具備して構成されている。 The control unit 701 corresponds to an example of a driving unit in the present invention, and is driven by power feeding from the organic thin film solar cell module A5 and the organic thin film solar cell module A6. Note that the control unit 701 may be directly supplied with power from the organic thin film solar cell module A5 and the organic thin film solar cell module A6, and power from the organic thin film solar cell module A5 and the organic thin film solar cell module A6 is supplied to the battery 707. After being charged once, the battery 707 may be driven by power feeding. The control unit 701 includes, for example, a CPU, a memory, an interface, and the like.
　表示部７０２は、各種の情報を電子機器Ｂ５の外観に表示するためのものである。表示部７０２は、たとえば液晶表示パネルあるいは有機ＥＬ表示パネルなどである。本実施形態においては、表示部７０２は、有機薄膜太陽電池モジュールＡ５を透して外観に情報を表す。 The display unit 702 is for displaying various types of information on the external appearance of the electronic device B5. The display unit 702 is, for example, a liquid crystal display panel or an organic EL display panel. In the present embodiment, the display unit 702 displays information on the exterior through the organic thin film solar cell module A5.
　入力部７０３は、使用者の操作を電気信号として制御部７０１に出力するためのものである。入力部７０３は、たとえば表示部７０２に積層されたタッチパネルである。なお、表示部７０２と入力部７０３とが一体的に構成されていてもよい。 The input unit 703 is for outputting a user operation as an electrical signal to the control unit 701. The input unit 703 is a touch panel laminated on the display unit 702, for example. Note that the display unit 702 and the input unit 703 may be configured integrally.
　マイク７０４は、使用者の音声を電気信号に変換するデバイスである。スピーカ７０５は、通話相手の音声や各種の通知音などを出力するデバイスである。 The microphone 704 is a device that converts a user's voice into an electrical signal. The speaker 705 is a device that outputs the voice of the other party and various notification sounds.
　無線通信部７０６は、無線通信規格に準拠した双方向無線通信を行うデバイスである。 The wireless communication unit 706 is a device that performs bidirectional wireless communication conforming to the wireless communication standard.
　バッテリ７０７は、電子機器Ｂ５を駆動する電力を蓄えるデバイスである。バッテリ７０７は、充放電が適宜可能に構成されている。バッテリ７０７の充電は、図示しないアダプタを用いた商用電力からの給電、または有機薄膜太陽電池モジュールＡ５および有機薄膜太陽電池モジュールＡ６からの給電によってなされる。 The battery 707 is a device that stores electric power for driving the electronic device B5. The battery 707 is configured to be appropriately charged / discharged. The battery 707 is charged by feeding from commercial power using an adapter (not shown) or feeding from the organic thin film solar cell module A5 and the organic thin film solar cell module A6.
　有機薄膜太陽電池モジュールＡ５および有機薄膜太陽電池モジュールＡ６は、第１導電層１、第２導電層２、光電変換層３、支持基板４１、パッシベーション膜４２、保護樹脂層４５およびバイパス導電部５を備えている。本実施形態においては、有機薄膜太陽電池モジュールＡ５および有機薄膜太陽電池モジュールＡ６は、平面視矩形状とされているが、これは一例であり、それぞれは様々な形状とされうる。有機薄膜太陽電池モジュールＡ５と有機薄膜太陽電池モジュールＡ６とは、互いの構成が一部を除き共通する。以下においては、まず有機薄膜太陽電池モジュールＡ５について説明する。 The organic thin film solar cell module A5 and the organic thin film solar cell module A6 include the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3, the support substrate 41, the passivation film 42, the protective resin layer 45, and the bypass conductive portion 5. I have. In the present embodiment, the organic thin-film solar cell module A5 and the organic thin-film solar cell module A6 are rectangular in plan view, but this is an example, and each can have various shapes. The organic thin film solar cell module A5 and the organic thin film solar cell module A6 are common except for a part of each other. In the following, first, the organic thin film solar cell module A5 will be described.
　図４９は、有機薄膜太陽電池モジュールＡ５のうち第１導電層１、第２導電層２、光電変換層３、支持基板４１および保護樹脂層４５を示す要部分解斜視図である。なお、理解の便宜上,支持基板４１は想像線（二点鎖線）で示している。図５０は、有機薄膜太陽電池モジュールＡ５の第１導電層１を示す平面図である。図５１は、有機薄膜太陽電池モジュールＡ５の光電変換層３を示す平面図である。図５２は、有機薄膜太陽電池モジュールＡ５の第２導電層２を示す平面図である。図５３は、有機薄膜太陽電池モジュールＡ５の保護樹脂層４５およびバイパス導電部５を示す平面図である。 FIG. 49 is an exploded perspective view of a main part showing the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3, the support substrate 41, and the protective resin layer 45 in the organic thin film solar cell module A5. For convenience of understanding, the support substrate 41 is indicated by an imaginary line (two-dot chain line). FIG. 50 is a plan view showing the first conductive layer 1 of the organic thin film solar cell module A5. FIG. 51 is a plan view showing the photoelectric conversion layer 3 of the organic thin film solar cell module A5. FIG. 52 is a plan view showing the second conductive layer 2 of the organic thin film solar cell module A5. FIG. 53 is a plan view showing the protective resin layer 45 and the bypass conductive portion 5 of the organic thin-film solar cell module A5.
　支持基板４１は、有機薄膜太陽電池モジュールＡ５の土台となる部材である。支持基板４１は、たとえば透明なガラスあるいは樹脂からなる。支持基板４１の厚さは、たとえば０．０５ｍｍ～２．０ｍｍである。 The support substrate 41 is a member that becomes a base of the organic thin film solar cell module A5. The support substrate 41 is made of, for example, transparent glass or resin. The thickness of the support substrate 41 is, for example, 0.05 mm to 2.0 mm.
　第１導電層１は、支持基板４１上に形成されている。第１導電層１は、透明であり、本実施形態においてはＩＴＯからなる。図４９および図５０に示すように、第１導電層１は、第１電極部１１、第１端部１４、第１延出部１５、第２延出部１６、複数の開口１８およびスリット１９、第３端縁１０１および延出部１０３を有する。本実施形態においては、第１導電層１は、平面視略矩形状とされているが、これは第１導電層１の形状の一例である。第１導電層１の形状は、様々な形状に設定されうる。第１導電層１の厚さは、たとえば１００ｎｍ～３００ｎｍである。なお、図５０において、第１電極部１１、第１端部１４、第１延出部１５および第２延出部１６には、斜線のハッチングを付している。 The first conductive layer 1 is formed on the support substrate 41. The first conductive layer 1 is transparent and is made of ITO in this embodiment. As shown in FIGS. 49 and 50, the first conductive layer 1 includes a first electrode portion 11, a first end portion 14, a first extension portion 15, a second extension portion 16, a plurality of openings 18 and slits 19. And a third end edge 101 and an extending portion 103. In the present embodiment, the first conductive layer 1 has a substantially rectangular shape in plan view, but this is an example of the shape of the first conductive layer 1. The shape of the first conductive layer 1 can be set to various shapes. The thickness of the first conductive layer 1 is, for example, 100 nm to 300 nm. In FIG. 50, the first electrode portion 11, the first end portion 14, the first extension portion 15, and the second extension portion 16 are hatched.
　第１電極部１１は、光電変換層３によって生じた正孔が集約される層であり、いわゆるアノード電極として機能する。本実施形態においては、第１導電層１の大部分が１つの第１電極部１１とされている。 The first electrode portion 11 is a layer in which holes generated by the photoelectric conversion layer 3 are aggregated, and functions as a so-called anode electrode. In the present embodiment, most of the first conductive layer 1 is a single first electrode portion 11.
　第１延出部１５は、第１電極部１１から、平面視において光電変換層３の外方に延出する部分である。図５０においては、第１電極部１１と第１延出部１５との境界を想像線（二点鎖線）で示している。第１延出部１５を設けることにより、光電変換層３における発電によって集約された正孔を、有機薄膜太陽電池モジュールＡ５外に導くことができる。 The first extending portion 15 is a portion extending from the first electrode portion 11 to the outside of the photoelectric conversion layer 3 in plan view. In FIG. 50, the boundary between the first electrode portion 11 and the first extension portion 15 is indicated by an imaginary line (two-dot chain line). By providing the 1st extension part 15, the hole collected by the electric power generation in the photoelectric converting layer 3 can be guide | induced outside the organic thin-film solar cell module A5.
　第１端部１４は、スリット１９によって第１電極部１１と隔離された部分である。本実施形態においては、第１端部１４は、たとえば平面視円形状とされている。本実施形態においては、第１端部１４は、略円形状とされた部分と矩形状の部分とが組み合わされた形状とされている。 The first end portion 14 is a portion separated from the first electrode portion 11 by the slit 19. In the present embodiment, the first end portion 14 has, for example, a circular shape in plan view. In the present embodiment, the first end portion 14 has a shape in which a substantially circular portion and a rectangular portion are combined.
　第２延出部１６は、第１端部１４から、平面視において光電変換層３の外方に延出している。図５０においては、第１端部１４と第２延出部１６との境界を想像線（二点鎖線）で示している。本実施形態においては、第１延出部１５と第２延出部１６とが隣り合う配置とされている。第２延出部１６を設けることにより、光電変換層３における発電によって集約された電子を、有機薄膜太陽電池モジュールＡ５外に導くことができる。 The second extending portion 16 extends from the first end portion 14 to the outside of the photoelectric conversion layer 3 in plan view. In FIG. 50, the boundary between the first end portion 14 and the second extension portion 16 is indicated by an imaginary line (two-dot chain line). In the present embodiment, the first extending portion 15 and the second extending portion 16 are arranged adjacent to each other. By providing the 2nd extension part 16, the electrons concentrated by the electric power generation in the photoelectric converting layer 3 can be guide | induced outside the organic thin-film solar cell module A5.
　複数の開口１８は、厚さ方向に第１導電層１を貫通した開口部分である。本実施形態においては、２つの開口１８が設けられている。図５０における図中上方の開口１８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口１８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 18 are openings that penetrate the first conductive layer 1 in the thickness direction. In the present embodiment, two openings 18 are provided. The upper opening 18 in FIG. 50 is provided to make the speaker 705 function, for example. On the other hand, the largest opening 18 in the center in the figure is provided to display the information displayed by the display unit 702 on the appearance.
　第３端縁１０１は、図中中央の開口１８を規定する端縁である。本実施形態においては、第３端縁１０１は、開口１８を四方から囲む端縁となっており、平面視矩形環状である。なお、第３端縁１０１は、開口１８を四方から囲む形状に限定されない。たとえば、第３端縁１０１が開口１８に三方から隣接することにより、開口１８が第１電極部１１から平面視において外方に開いた構成であってもよい。あるいは、第３端縁１０１は、開口１８に対して二方あるいは一方のみから隣接するものであってもよい。第３端縁１０１に隣接する領域、すなわち図中中央の１８からは、支持基板４１が露出している。また、第３端縁１０１は、後述する保護樹脂層４５の第２端縁４５１およびパッシベーション膜４２の第１端縁４２１から延出する第１導電層１の部分の内端縁とされている。 The third edge 101 is an edge that defines the central opening 18 in the drawing. In the present embodiment, the third end edge 101 is an end edge surrounding the opening 18 from four directions, and has a rectangular shape in plan view. The third end edge 101 is not limited to a shape surrounding the opening 18 from four directions. For example, the third end edge 101 may be adjacent to the opening 18 from three directions so that the opening 18 opens outward from the first electrode portion 11 in plan view. Alternatively, the third edge 101 may be adjacent to the opening 18 from two or only one side. The support substrate 41 is exposed from the region adjacent to the third edge 101, that is, from the center 18 in the drawing. The third edge 101 is an inner edge of a portion of the first conductive layer 1 that extends from a second edge 451 of a protective resin layer 45 to be described later and a first edge 421 of the passivation film 42. .
　延出部１０３は、パッシベーション膜４２および保護樹脂層４５から外方に延出する部位である。本実施形態においては、第１導電層１の略全外周端縁に、延出部１０３が設けられている。 The extending portion 103 is a portion that extends outward from the passivation film 42 and the protective resin layer 45. In the present embodiment, the extending portion 103 is provided on substantially the entire outer peripheral edge of the first conductive layer 1.
　第２導電層２は、その大部分が光電変換層３を介して第１導電層１上に積層されている。また、第２導電層２の一部は、第１導電層１に直接接している。第２導電層２の材質は特に限定されないが、本実施形態においては、第２導電層２は、Ａｌ、Ｗ、Ｍｏ、Ｍｎ、Ｍｇに代表される金属からなる。以下においては、第２導電層２がＡｌからなる場合を例に説明する。したがって、第２導電層２は、透明ではない。またこの場合、第２導電層２の支持基板４１とは反対側の表面に、Ａｌ２Ｏ３からなる不動態皮膜（図示略）が形成されてもよい。第２導電層２の厚さは、たとえば３０ｎｍ～１５０ｎｍである。 Most of the second conductive layer 2 is laminated on the first conductive layer 1 via the photoelectric conversion layer 3. A part of the second conductive layer 2 is in direct contact with the first conductive layer 1. Although the material of the 2nd conductive layer 2 is not specifically limited, In this embodiment, the 2nd conductive layer 2 consists of metals represented by Al, W, Mo, Mn, and Mg. Hereinafter, a case where the second conductive layer 2 is made of Al will be described as an example. Therefore, the second conductive layer 2 is not transparent. In this case, a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second conductive layer 2 opposite to the support substrate 41. The thickness of the second conductive layer 2 is, for example, 30 nm to 150 nm.
　図５２に示すように、第２導電層２は、第２電極部２１、第２端部２４および複数の開口２８を有する。本実施形態においては、第２導電層２は、平面視略矩形状とされているが、これは第２導電層２の形状の一例である。第２導電層２の形状は、様々な形状に設定されうる。なお、図５２においては、第２電極部２１および第２端部２４に、斜線のハッチングを付している。 As shown in FIG. 52, the second conductive layer 2 has a second electrode portion 21, a second end portion 24, and a plurality of openings 28. In the present embodiment, the second conductive layer 2 has a substantially rectangular shape in plan view, but this is an example of the shape of the second conductive layer 2. The shape of the second conductive layer 2 can be set to various shapes. In FIG. 52, the second electrode portion 21 and the second end portion 24 are hatched.
　第２電極部２１は、光電変換層３によって生じた電子が集約される層であり、いわゆるカソード電極として機能する。第２電極部２１は、平面視において、第１電極部１１と一致する。本実施形態においては、第２導電層２の大部分が第２電極部２１とされている。 The second electrode portion 21 is a layer in which electrons generated by the photoelectric conversion layer 3 are collected, and functions as a so-called cathode electrode. The second electrode portion 21 coincides with the first electrode portion 11 in plan view. In the present embodiment, most of the second conductive layer 2 is the second electrode portion 21.
　第２端部２４は、平面視において第１導電層１の第１端部１４に一致し、且つ第２電極部２１に繋がっている。図５２においては、理解の便宜上、第２端部２４の形状を想像線（二点鎖線）で示している。第２端部２４は、第１端部１４と同様に平面視略円形状の部分と平面視矩形状の部分とが組み合わされたとされている。 The second end portion 24 coincides with the first end portion 14 of the first conductive layer 1 in plan view and is connected to the second electrode portion 21. In FIG. 52, for convenience of understanding, the shape of the second end portion 24 is indicated by an imaginary line (two-dot chain line). Similarly to the first end portion 14, the second end portion 24 is a combination of a substantially circular portion in plan view and a rectangular portion in plan view.
　複数の開口２８は、厚さ方向に第２導電層２を貫通する開口部分である。本実施形態においては、２つの開口２８が設けられている。図５２における図中上方の開口２８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口２８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 28 are openings that penetrate the second conductive layer 2 in the thickness direction. In the present embodiment, two openings 28 are provided. The upper opening 28 in FIG. 52 is provided, for example, to make the speaker 705 function. On the other hand, the largest opening 28 in the center in the figure is provided to display the information displayed by the display unit 702 on the appearance.
　第４内方退避端縁２０１は、図中中央の開口２８を規定する端縁である。本実施形態においては、第４内方退避端縁２０１は、開口２８を四方から囲む端縁となっており、平面視矩形環状である。なお、第４内方退避端縁２０１は、開口２８を四方から囲む形状に限定されない。たとえば、第４内方退避端縁２０１が開口２８を三方から隣接することにより、開口２８が第２電極部２１から平面視において外方に開いた構成であってもよい。あるいは、第４内方退避端縁２０１は、開口２８に対して二方あるいは一方のみから隣接するものであってもよい。また、図４７に示すように、第４内方退避端縁２０１は、第３端縁１０１よりも内方（開口１８内に延出する方向とは反対側）に退避している。 The fourth inward retracting edge 201 is an edge that defines the central opening 28 in the drawing. In the present embodiment, the fourth inward retracting edge 201 is an edge that surrounds the opening 28 from four directions and has a rectangular shape in plan view. The fourth inward retracting edge 201 is not limited to a shape surrounding the opening 28 from four directions. For example, the fourth inward retracting edge 201 may be configured such that the opening 28 is opened outward from the second electrode portion 21 in plan view by adjoining the opening 28 from three directions. Alternatively, the fourth inward retracting edge 201 may be adjacent to the opening 28 from two or only one side. As shown in FIG. 47, the fourth inward retracting edge 201 is retracted inward (opposite to the direction extending into the opening 18) from the third end edge 101.
　第４外方退避端縁２０２は、図４７に示すように、後述するパッシベーション膜４２の第１外方端縁４２２および保護樹脂層４５の第２外方端縁４５２よりも平面視において内方（図４７における右方）に退避している。本実施形態においては、第４外方退避端縁２０２は、平面視環状である。 As shown in FIG. 47, the fourth outer retracting edge 202 is inward in a plan view than a first outer edge 422 of a passivation film 42 to be described later and a second outer edge 452 of the protective resin layer 45. It is retracted (to the right in FIG. 47). In the present embodiment, the fourth outward retracting edge 202 has an annular shape in plan view.
　光電変換層３は、第１導電層１と第２導電層２とに挟まれて、支持基板４１に積層されている。光電変換層３は、有機薄膜からなる層であり、受けた光を電力に変換する光電変換機能を発揮する。光電変換層３の具体的構成は特に限定されないが、その一例を挙げると、バルクヘテロ接合有機活性層と、このバルクヘテロ接合有機活性層に対して第１導電層１側に積層された正孔輸送層とからなる。本実施形態においては、光電変換層３は、平面視矩形状とされているが、これは一例であり、光電変換層３は、様々な形状とされうる。光電変換層３の厚さは、たとえば５０ｎｍ～３００ｎｍである。 The photoelectric conversion layer 3 is sandwiched between the first conductive layer 1 and the second conductive layer 2 and laminated on the support substrate 41. The photoelectric conversion layer 3 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power. The specific configuration of the photoelectric conversion layer 3 is not particularly limited. For example, a bulk heterojunction organic active layer and a hole transport layer stacked on the first conductive layer 1 side with respect to the bulk heterojunction organic active layer are given. It consists of. In the present embodiment, the photoelectric conversion layer 3 has a rectangular shape in plan view, but this is an example, and the photoelectric conversion layer 3 can have various shapes. The thickness of the photoelectric conversion layer 3 is, for example, 50 nm to 300 nm.
　バルクヘテロ接合有機活性層は、ｐ型有機活性層領域とｎ型有機活性層領域が混在し、複雑なバルクへテロｐｎ接合を形成している。ｐ型有機活性層領域は、例えば、Ｐ３ＨＴ（poly(3-hexylthiophene-2,5diyl)）で形成され、ｎ型有機活性層領域は、例えば、ＰＣＢＭ（6,6-phenyl-C61-butyric acid methyl ester）で形成されている。正孔輸送層は、たとえばＰＥＤＯＴ：ＰＳＳで形成されている。 In the bulk heterojunction organic active layer, a p-type organic active layer region and an n-type organic active layer region are mixed to form a complex bulk hetero pn junction. The p-type organic active layer region is formed of, for example, P3HT (poly (3-hexylthiophene-2,5diyl)), and the n-type organic active layer region is, for example, PCBM (6,6-phenyl-C61-butyric acid methyl). ester). The hole transport layer is made of, for example, PEDOT: PSS.
　光電変換層３の形成に用いられる材質を例示すると、フタロシアニン（Ｐｃ:Phthalocyanine）、亜鉛フタロシアニン（ＺｎＰｃ:Zinc- phthalocyanine）、Ｍｅ－Ｐｔｃｄｉ（N,N’-dimethyl perylene-3,4,9,10-dicarboximide）、フラーレン（C 60 :Buckminster fullerene）が挙げられる。これらの材質は、たとえば真空蒸着に使用される。 Examples of materials used to form the photoelectric conversion layer 3 include phthalocyanine (Pc: Phthhalocyanine), zinc phthalocyanine (ZnPc: Zinc- phthalocyanine), Me-Ptcdi (N, N'-dimethyl perylene-3,4,9,10). -dicarboximide) and fullerene (C 60: Buckminster fullerene). These materials are used for vacuum deposition, for example.
　また、光電変換層３の形成に用いられる他の材質を例示すると、ＭＤＭＯ－ＰＰＶ（poly[2-methoxy-5-(3,7-dimethyl octyloxy)]-1,4-phenylene vinylene）、ＰＣＤＴＢＴ（poly[N-9’-hepta-decanyl-2,7-carbazole-alt-5,5-(4’,7’-di-thienyl-2’1’,3’-b3nzothiadizaole)]）、ＰＣ６０ＢＭ（6,6-phenyl-C61-butyric acid methyl ester）、ＰＣ７０ＢＭ（6,6-phenyl-C71-butyric acid methyl ester）が挙げられる。これらの材質は、たとえば溶液プロセルに使用される。 Other materials used for forming the photoelectric conversion layer 3 are exemplified by MDMO-PPV (poly [2-methoxy-5- (3,7-dimethyl-octyloxy)]-1,4-phenylene-vinylene), PCDTBT ( poly [N-9'-hepta-decanyl-2,7-carbazole-alt-5,5- (4 ', 7'-di-thienyl-2'1', 3'-b3nzothiadizaole)]), PC60BM (6 , 6-phenyl-C61-butyric acid methyl ester) and PC70BM (6,6-phenyl-C71-butyric acid methyl ester). These materials are used for, for example, a solution process.
　図５１に示すように、光電変換層３は、非発電領域３０、発電領域３１および意匠表示部３５、複数の開口３８、第５内方退避端縁３０１および第５外方退避端縁３０２を有している。なお、図５１においては、非発電領域３０および発電領域３１に、複数の離散点からなるハッチングを付している。 As shown in FIG. 51, the photoelectric conversion layer 3 includes a non-power generation region 30, a power generation region 31, a design display unit 35, a plurality of openings 38, a fifth inner retraction edge 301, and a fifth outer retraction edge 302. Have. In FIG. 51, the non-power generation region 30 and the power generation region 31 are hatched with a plurality of discrete points.
　意匠表示部３５は、第１導電層１を透して外観に表れる意匠を構成する部位である。意匠表示部３５が構成する意匠とは、使用者等が目視することによって、文字、記号、図柄などの視覚的特異部分として視認されうるものを指す。本実施形態においては、意匠表示部３５は、円環形状を表している。 The design display part 35 is a part that constitutes a design that appears through the first conductive layer 1 and appears on the exterior. The design which the design display part 35 comprises refers to what can be visually recognized as visually peculiar parts, such as a character, a symbol, and a design, when a user etc. look. In the present embodiment, the design display unit 35 represents an annular shape.
　本実施形態においては、意匠表示部３５は、貫通部３５０によって構成されている。貫通部３５０は、光電変換層３を厚さ方向に貫通する態様の部位である。このような貫通部３５０は、第１導電層１を透して外観に表れる。また、本実施形態においては、貫通部３５０は、第２導電層２を第１導電層１側に露出させている。すなわち、貫通部３５０を通じて第２導電層２の一部が外観に表れている。 In the present embodiment, the design display unit 35 is configured by a through-hole portion 350. The penetrating part 350 is a part having a mode of penetrating the photoelectric conversion layer 3 in the thickness direction. Such a penetrating portion 350 appears through the first conductive layer 1. In the present embodiment, the penetrating portion 350 exposes the second conductive layer 2 to the first conductive layer 1 side. That is, a part of the second conductive layer 2 appears on the exterior through the through part 350.
　発電領域３１は、第１導電層１の第１電極部１１および第２導電層２の第２電極部２１に挟まれ、且つ光電変換機能を発揮することにより発電に寄与する領域である。また、発電領域３１の形状は、平面視において、第１電極部１１および第２電極部２１に一致する。 The power generation region 31 is a region that is sandwiched between the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 and contributes to power generation by exhibiting a photoelectric conversion function. The shape of the power generation region 31 matches the first electrode part 11 and the second electrode part 21 in plan view.
　非発電領域３０は、光電変換層３のうち平面視において第１導電層１の第１電極部１１および第２導電層２の第２電極部２１とは重ならない領域であり、第１導電層１の第１端部１４と重なっている。第１端部１４は、第２導電層２の第２端部２４と接しており、集約された正孔と電子とが即座に結合してしまう。このため、非発電領域３０は、且つ発電に寄与しない。すなわち、光電変換層３のうち複数の発電領域３１以外の領域が、非発電領域３０とされている。 The non-power generation region 30 is a region of the photoelectric conversion layer 3 that does not overlap the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 in plan view. 1 overlaps the first end 14 of the first. The first end portion 14 is in contact with the second end portion 24 of the second conductive layer 2, and the aggregated holes and electrons are immediately combined. For this reason, the non-power generation region 30 does not contribute to power generation. That is, a region other than the plurality of power generation regions 31 in the photoelectric conversion layer 3 is a non-power generation region 30.
　本実施形態においては、非発電領域３０は、端部領域３４とされている。端部領域３４は、貫通部３５０（意匠表示部３５）を有している。端部領域３４は、平面視において第１導電層１の第１端部１４に内包される貫通部３５０（意匠表示部３５）を含み、且つ第１導電層１の第１端部１４に重なっている。また、端部領域３４は、第２導電層２の第２端部２４と重なっている。第１導電層１の第１端部１４と第２導電層２の第２端部２４とは、端部領域３４の貫通部３５０を通じて接している。 In the present embodiment, the non-power generation region 30 is an end region 34. The end region 34 has a penetrating portion 350 (design display portion 35). The end region 34 includes a through portion 350 (design display portion 35) included in the first end portion 14 of the first conductive layer 1 in plan view, and overlaps the first end portion 14 of the first conductive layer 1. ing. The end region 34 overlaps the second end 24 of the second conductive layer 2. The first end portion 14 of the first conductive layer 1 and the second end portion 24 of the second conductive layer 2 are in contact with each other through the through portion 350 of the end region 34.
　複数の開口３８は、光電変換層３を厚さ方向に貫通する開口部分である。本実施形態においては、２つの開口３８が設けられている。図５１における図中上方の開口３８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口３８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 38 are openings that penetrate the photoelectric conversion layer 3 in the thickness direction. In the present embodiment, two openings 38 are provided. The upper opening 38 in FIG. 51 is provided, for example, to make the speaker 705 function. On the other hand, the largest opening 38 in the center in the drawing is provided to display the information displayed by the display unit 702 on the appearance.
　第５内方退避端縁３０１は、図中中央の開口３８を規定する端縁である。本実施形態においては、第５内方退避端縁３０１は、開口３８を四方から囲む端縁となっており、平面視矩形環状である。なお、第５内方退避端縁３０１は、開口３８を四方から囲む形状に限定されない。たとえば、第５内方退避端縁３０１が開口３８を三方から隣接することにより、開口３８が発電領域３１から平面視において外方に開いた構成であってもよい。あるいは、第５内方退避端縁３０１は、開口３８に対して二方あるいは一方のみに設けられたものであってもよい。また、図４７に示すように、第５内方退避端縁３０１は、第３端縁１０１よりも内方（開口１８内に延出する方向とは反対側）に退避している。 The fifth inward retracting edge 301 is an edge that defines the central opening 38 in the drawing. In the present embodiment, the fifth inward retracting edge 301 is an edge that surrounds the opening 38 from four directions and has a rectangular ring shape in plan view. The fifth inward retracting edge 301 is not limited to a shape surrounding the opening 38 from four directions. For example, the fifth inward retracting edge 301 may be configured such that the opening 38 is opened outward from the power generation region 31 in a plan view by adjoining the opening 38 from three directions. Alternatively, the fifth inward retracting edge 301 may be provided in two or only one with respect to the opening 38. Further, as shown in FIG. 47, the fifth inward retracting edge 301 is retracted inward (opposite to the direction extending into the opening 18) than the third end edge 101.
　第５外方退避端縁３０２は、図４７に示すように、後述するパッシベーション膜４２の第１外方端縁４２２および保護樹脂層４５の第２外方端縁４５２よりも平面視において内方（図４７における右方）に退避している。本実施形態においては、第５外方退避端縁３０２は、平面視環状である。 As shown in FIG. 47, the fifth outer retreat end edge 302 is inward in a plan view than a first outer end edge 422 of a passivation film 42 to be described later and a second outer end edge 452 of the protective resin layer 45. It is retracted (to the right in FIG. 47). In the present embodiment, the fifth outward retracting edge 302 is annular in plan view.
　上述した構成により、有機薄膜太陽電池モジュールＡ５においては、第１延出部１５が第１電極部１１に繋がっている。また、第２電極部２１には、第２端部２４が繋がっている。第２端部２４は、端部領域３４の貫通部３５０を通じて第１端部１４と接している。第１端部１４には、第２延出部１６が繋がっている。この結果、第１延出部１５と第２延出部１６とが有機薄膜太陽電池モジュールＡ５の出力端子として機能する。 With the above-described configuration, in the organic thin film solar cell module A5, the first extending portion 15 is connected to the first electrode portion 11. Further, the second end portion 24 is connected to the second electrode portion 21. The second end portion 24 is in contact with the first end portion 14 through the through portion 350 of the end region 34. A second extending portion 16 is connected to the first end portion 14. As a result, the 1st extension part 15 and the 2nd extension part 16 function as an output terminal of organic thin film solar cell module A5.
　パッシベーション膜４２は、第２導電層２上に積層されており、第２導電層２および光電変換層３を保護している。パッシベーション膜４２は、たとえばＳｉＮまたはＳｉＯＮからなる。パッシベーション膜４２の厚さは、たとえば０．５μｍ～２．０μｍであり、本実施形態においては、たとえば１．５μｍ程度とされる。 The passivation film 42 is laminated on the second conductive layer 2 and protects the second conductive layer 2 and the photoelectric conversion layer 3. The passivation film 42 is made of, for example, SiN or SiON. The thickness of the passivation film 42 is, for example, 0.5 μm to 2.0 μm. In the present embodiment, the thickness is, for example, about 1.5 μm.
　保護樹脂層４５は、パッシベーション膜４２を覆っている層である。保護樹脂層４５は、たとえば紫外線硬化樹脂からなる。保護樹脂層４５の厚さは、たとえば３μｍ～２０μｍであり、本実施形態においては、たとえば１０μｍ程度とされる。 The protective resin layer 45 is a layer that covers the passivation film 42. The protective resin layer 45 is made of, for example, an ultraviolet curable resin. The thickness of the protective resin layer 45 is, for example, 3 μm to 20 μm. In the present embodiment, the thickness is, for example, about 10 μm.
　図５３に示すように、保護樹脂層４５は、複数の開口４５８、第２端縁４５１および第２外方端縁４５２を有する。なお、図５３においては、保護樹脂層４５に斜線のハッチングを付している。 53, the protective resin layer 45 has a plurality of openings 458, a second end edge 451, and a second outer end edge 452. In FIG. 53, the protective resin layer 45 is hatched.
　複数の開口４５８は、保護樹脂層４５の一部が削除された態様であり、保護樹脂層４５を貫通している。本実施形態においては、２つの開口４５８が設けられている。図５３における図中上方の開口４５８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口４５８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 458 is a mode in which a part of the protective resin layer 45 is removed, and penetrates the protective resin layer 45. In the present embodiment, two openings 458 are provided. In FIG. 53, the upper opening 458 in the drawing is provided to allow the speaker 705 to function, for example. On the other hand, the largest opening 458 in the center in the drawing is provided to display the information displayed by the display unit 702 on the appearance.
　第２端縁４５１は、図中中央の開口４５８を規定する端縁である。本実施形態においては、第２端縁４５１は、開口４５８を四方から囲む端縁となっており、平面視矩形環状である。なお、第２端縁４５１は、開口４５８を四方から囲む形状に限定されない。たとえば、第２端縁４５１が開口４５８を三方から隣接することにより、開口４５８が保護樹脂層４５から平面視において外方に開いた構成であってもよい。あるいは、第２端縁４５１は、開口４５８に対して二方あるいは一方のみ設けられたものであってもよい。 The second edge 451 is an edge that defines the central opening 458 in the drawing. In the present embodiment, the second end edge 451 is an end edge that surrounds the opening 458 from four directions, and has a rectangular ring shape in plan view. The second end edge 451 is not limited to a shape surrounding the opening 458 from four sides. For example, the second edge 451 may be adjacent to the opening 458 from three directions, so that the opening 458 opens outward from the protective resin layer 45 in plan view. Alternatively, the second end edge 451 may be provided in two or only one with respect to the opening 458.
　第２外方端縁４５２は、平面視において光電変換層３の少なくとも一部を挟んで第２端縁４５１と反対側に位置しており、本実施形態においては、保護樹脂層４５の外周端縁である。 The second outer end edge 452 is located on the opposite side of the second end edge 451 across at least a part of the photoelectric conversion layer 3 in plan view, and in this embodiment, the outer peripheral end of the protective resin layer 45. It is an edge.
　パッシベーション膜４２は、第１端縁４２１および第１外方端縁４２２を有している。 The passivation film 42 has a first end edge 421 and a first outer end edge 422.
　第１端縁４２１は、平面視において第２端縁４５１と一致している。また、本実施形態においては、第１端縁４２１は、第２端縁４５１と連続した面をなしている。第１外方端縁４２２は、平面視において第２外方端縁４５２と一致している。また、本実施形態においては、第１外方端縁４２２は、第２外方端縁４５２と連続した面をなしている。 The first end edge 421 coincides with the second end edge 451 in plan view. In the present embodiment, the first end edge 421 forms a surface continuous with the second end edge 451. The first outer end edge 422 coincides with the second outer end edge 452 in plan view. In the present embodiment, the first outer end edge 422 forms a surface that is continuous with the second outer end edge 452.
　図４７に示すように、第２端縁４５１および第１端縁４２１によって囲まれた領域である開口４５８から、支持基板４１の一部が露出領域４１１として露出している。また、露出領域４１１は、第１導電層１等によって覆われておらず、支持基板４１の表面が直接露出している。 47, a part of the support substrate 41 is exposed as an exposed region 411 from an opening 458 that is a region surrounded by the second end edge 451 and the first end edge 421. The exposed region 411 is not covered with the first conductive layer 1 or the like, and the surface of the support substrate 41 is directly exposed.
　バイパス導電部５は、第１導電層１に到達した正孔を集電するための、第１導電層１より低抵抗な経路を構成するためのものである。本実施形態においては、バイパス導電部５は、２つのバスバー部５１、複数の連絡部５２および２つの集極部５３を有する。バイパス導電部５は、第１導電層１よりも低抵抗な材質からなり、たとえばＡｇまたはカーボンを含む。 The bypass conductive portion 5 is for configuring a path having a lower resistance than the first conductive layer 1 for collecting holes that have reached the first conductive layer 1. In the present embodiment, the bypass conductive portion 5 includes two bus bar portions 51, a plurality of connecting portions 52, and two pole collecting portions 53. The bypass conductive portion 5 is made of a material having a resistance lower than that of the first conductive layer 1 and contains, for example, Ag or carbon.
　図４７および図５３に示すように、１つのバスバー部５１は、第２端縁４５１および第１端縁４２１を全長にわたって覆っている。このバスバー部５１は、第１導電層１のうち第３端縁１０１と第１端縁４２１（第２端縁４５１）との間に位置する部分を覆っている。また、このバスバー部５１の内端縁は、平面視において第３端縁１０１と一致している。他方のバスバー部５１は、第２外方端縁４５２および第１外方端縁４２２を全長にわたって覆っている。このバスバー部５１は、第１導電層１の延出部１０３を覆っている。このような構成により、２つのバスバー部５１は、それぞれが第１導電層１と導通している。 47 and 53, one bus bar portion 51 covers the second end edge 451 and the first end edge 421 over the entire length. The bus bar portion 51 covers a portion of the first conductive layer 1 located between the third end edge 101 and the first end edge 421 (second end edge 451). Further, the inner edge of the bus bar portion 51 coincides with the third edge 101 in plan view. The other bus bar portion 51 covers the second outer end edge 452 and the first outer end edge 422 over the entire length. The bus bar portion 51 covers the extending portion 103 of the first conductive layer 1. With such a configuration, each of the two bus bar portions 51 is electrically connected to the first conductive layer 1.
　複数の連絡部５２は、保護樹脂層４５上に形成された部分であり、図５３における図中内側のバスバー部５１と図中外側の連絡部５２とを連結している。２つの集極部５３は、一方が第１導電層１に導通しており、他方が第２導電層２に導通している。 The plurality of connecting portions 52 are portions formed on the protective resin layer 45 and connect the inner bus bar portion 51 in FIG. 53 and the outer connecting portion 52 in the drawing. One of the two current collectors 53 is electrically connected to the first conductive layer 1, and the other is electrically connected to the second conductive layer 2.
　図５４は、有機薄膜太陽電池モジュールＡ６の第１導電層１を示す平面図である。図５５は、有機薄膜太陽電池モジュールＡ６の光電変換層３を示す平面図である。図５６は、有機薄膜太陽電池モジュールＡ６の第２導電層２を示す平面図である。図５７は、有機薄膜太陽電池モジュールＡ６の保護樹脂層４５およびバイパス導電部５を示す平面図である。 FIG. 54 is a plan view showing the first conductive layer 1 of the organic thin-film solar cell module A6. FIG. 55 is a plan view showing the photoelectric conversion layer 3 of the organic thin film solar cell module A6. FIG. 56 is a plan view showing the second conductive layer 2 of the organic thin film solar cell module A6. FIG. 57 is a plan view showing the protective resin layer 45 and the bypass conductive portion 5 of the organic thin-film solar cell module A6.
　有機薄膜太陽電池モジュールＡ６においては、表示部７０２を外観に表すための開口１８、開口２８、開口３８、開口４５８等が設けられていない。このため、第３端縁１０１、第４内方退避端縁２０１、第５内方退避端縁３０１、第１端縁４２１および第２端縁４５１は設けられていない。また、バイパス導電部５は、外周に沿うバスバー部５１を有し、連絡部５２は、有していない。 The organic thin film solar cell module A6 is not provided with the opening 18, the opening 28, the opening 38, the opening 458 and the like for showing the display portion 702 in appearance. For this reason, the 3rd edge 101, the 4th inward retracting edge 201, the 5th inward retracting edge 301, the 1st end edge 421, and the 2nd end edge 451 are not provided. In addition, the bypass conductive portion 5 has a bus bar portion 51 along the outer periphery, and does not have a connecting portion 52.
　本実施形態においては、図５５に示すように、光電変換層３に複数の貫通部３５０（３５）が設けられている。これらの貫通部３５０は、それぞれがアルファベットを表している。この貫通部３５０を利用して、第１導電層１の第１端部１４と第２導電層２の第２端部２４とが接している点は、有機薄膜太陽電池モジュールＡ５と同様である。 In the present embodiment, as shown in FIG. 55, the photoelectric conversion layer 3 is provided with a plurality of through portions 350 (35). Each of these penetrating portions 350 represents an alphabet. The point where the first end portion 14 of the first conductive layer 1 and the second end portion 24 of the second conductive layer 2 are in contact with each other using the through portion 350 is the same as that of the organic thin film solar cell module A5. .
　次いで、有機薄膜太陽電池モジュールＡ５の製造方法の一例について、図５８～図６５を参照しつつ、以下に説明する。なお、これらの図においては、理解の便宜上、図４７とは、天地逆に表されている。また、図５８～図６５においては、図４４に示した電子機器Ｂ５のＸＬＶＩＩ－ＸＬＶＩＩ線における断面構造を生成する過程を示している。 Next, an example of a method for producing the organic thin film solar cell module A5 will be described below with reference to FIGS. In these drawings, for convenience of understanding, FIG. 47 is shown upside down. 58 to 65 show a process of generating a cross-sectional structure taken along line XLVII-XLVII of the electronic apparatus B5 shown in FIG.
　まず、図５８に示すように支持基板４１を用意する。そして、図５９に示すように、支持基板４１の片面にたとえばスパッタ法などの一般的な手法によりＩＴＯからなる第１導電層１を成膜する。次に、該ＩＴＯにパターニングを施し、開口１８、スリット１９等のパターンを形成するためのパターニングを行う。ここで、ＩＴＯへのパターニング手法としては、たとえばウエットエッチングを用いた手法、酸素プラズマエッチングを用いた手法、レーザパターニングを用いた手法が適宜採用される。なお、第１導電層１は、上記に限られず、例えばナノインプリントを用いた手法によって、支持基板４１上に直接的にＩＴＯをパターニングすることで形成するようにしても良い。 First, a support substrate 41 is prepared as shown in FIG. Then, as shown in FIG. 59, the first conductive layer 1 made of ITO is formed on one surface of the support substrate 41 by a general method such as sputtering. Next, patterning is performed on the ITO to form patterns such as openings 18 and slits 19. Here, as a patterning technique to ITO, for example, a technique using wet etching, a technique using oxygen plasma etching, and a technique using laser patterning are appropriately employed. The first conductive layer 1 is not limited to the above. For example, the first conductive layer 1 may be formed by directly patterning ITO on the support substrate 41 by a technique using nanoimprint.
　次いで、図６０に示すように、光電変換層３を形成する。光電変換層３の形成は、たとえば、スピンコート塗布により支持基板４１上および第１導電層１上に有機膜を成膜した後に、酸素プラズマエッチング、レーザパターニングを用いることによって、第５内方退避端縁３０１、第５外方退避端縁３０２、開口３８、貫通部３５０（意匠表示部３５）を有する構成に仕上げることにより行う。なお、光電変換層３は、上記に限定されず、スリットコート法、キャピラリーコート法、グラビア印刷などの手法によって、支持基板４１上および第１導電層１上に直接的に有機膜をパターニングすることで形成するようにしても良い。 Next, as shown in FIG. 60, the photoelectric conversion layer 3 is formed. The photoelectric conversion layer 3 is formed by, for example, depositing an organic film on the support substrate 41 and the first conductive layer 1 by spin coating, and then using oxygen plasma etching and laser patterning to perform fifth inward retraction. This is done by finishing the structure having an end edge 301, a fifth outward retracting end edge 302, an opening 38, and a penetrating part 350 (design display part 35). The photoelectric conversion layer 3 is not limited to the above, and an organic film is directly patterned on the support substrate 41 and the first conductive layer 1 by a method such as slit coating, capillary coating, or gravure printing. It may be formed by.
　次いで、図６１に示すように、第２導電層２を形成する。第２導電層２の形成は、たとえば上述した金属を真空加熱蒸着法によって支持基板４１、第１導電層１および光電変換層３上に金属膜を成膜する。次に、該金属膜に例えばマスク層を用いたエッチングを行うことによりパターニングを施す。このパターニングにより、光電変換層３上に第４内方退避端縁２０１および第４外方退避端縁２０２を有する第２導電層２を形成する。 Next, as shown in FIG. 61, the second conductive layer 2 is formed. The second conductive layer 2 is formed, for example, by forming a metal film on the support substrate 41, the first conductive layer 1 and the photoelectric conversion layer 3 using the above-described metal by vacuum heating vapor deposition. Next, the metal film is patterned by etching using, for example, a mask layer. By this patterning, the second conductive layer 2 having the fourth inner withdrawal edge 201 and the fourth outer withdrawal edge 202 is formed on the photoelectric conversion layer 3.
　次いで、図６２に示すように、パッシベーション膜４２を形成する。パッシベーション膜４２の形成は、たとえばプラズマＣＶＤ法によってＳｉＮまたはＳｉＯＮなどの膜を支持基板４１、第１導電層１、光電変換層３および第２導電層２上に形成することにより行う。 Next, as shown in FIG. 62, a passivation film 42 is formed. The passivation film 42 is formed by forming a film such as SiN or SiON on the support substrate 41, the first conductive layer 1, the photoelectric conversion layer 3, and the second conductive layer 2 by plasma CVD, for example.
　次いで、図６３に示すように、保護樹脂層４５を形成する。保護樹脂層４５の形成は、たとえば紫外線硬化樹脂を含む液体樹脂材料をスクリーン印刷によってパッシベーション膜４２上に塗布し、紫外線を照射することによって硬化させる。これにより、第２端縁４５１および第２外方端縁４５２を有する保護樹脂層４５が得られる。 Next, as shown in FIG. 63, a protective resin layer 45 is formed. The protective resin layer 45 is formed by applying a liquid resin material containing, for example, an ultraviolet curable resin on the passivation film 42 by screen printing and irradiating it with ultraviolet rays. Thereby, the protective resin layer 45 having the second end edge 451 and the second outer end edge 452 is obtained.
　次いで、図６４に示すように、保護樹脂層４５をマスクとして用いたパターニングをパッシベーション膜４２に施す。このパターニングは、たとえばフッ化水素を０．５５％～４．５％含むフッ化水素酸を用いたウエットエッチングによって行う。このようなフッ化水素酸は、紫外線硬化樹脂からなる保護樹脂層４５をほとんど溶解しない一方、ＳｉＮ等からなるパッシベーション膜４２を選択的に溶解する。また、フッ化水素酸は、ＩＴＯ等からなる第１導電層１はほとんど溶解しない。この結果、パッシベーション膜４２に第１端縁４２１および第１外方端縁４２２が形成される。第１端縁４２１は、平面視において第２端縁４５１と一致する。第１端縁４２１と第２端縁４５１とは、連続した面をなす。また、第１外方端縁４２２は、平面視において第２外方端縁４５２と一致する。第１外方端縁４２２と第２外方端縁４５２とは、連続した面をなす。 Next, as shown in FIG. 64, the passivation film 42 is patterned using the protective resin layer 45 as a mask. This patterning is performed, for example, by wet etching using hydrofluoric acid containing 0.55% to 4.5% hydrogen fluoride. Such hydrofluoric acid hardly dissolves the protective resin layer 45 made of an ultraviolet curable resin, but selectively dissolves the passivation film 42 made of SiN or the like. Further, hydrofluoric acid hardly dissolves the first conductive layer 1 made of ITO or the like. As a result, the first end edge 421 and the first outer end edge 422 are formed in the passivation film 42. The first edge 421 coincides with the second edge 451 in plan view. The first edge 421 and the second edge 451 form a continuous surface. The first outer end edge 422 coincides with the second outer end edge 452 in plan view. The first outer end edge 422 and the second outer end edge 452 form a continuous surface.
　次いで、図６５に示すように、バイパス導電部５を形成する。バイパス導電部５の形成は、たとえばＡｇまたはカーボンを含むペーストを塗布した後に、たとえば乾燥などの手法によってこのペーストを硬化させることによって行う。 Next, as shown in FIG. 65, the bypass conductive portion 5 is formed. The bypass conductive portion 5 is formed by, for example, applying a paste containing Ag or carbon and then curing the paste by a technique such as drying.
　次いで、第１導電層１にパターニングを施す。このパターニングは、たとえば濃塩酸と濃硝酸とが３：１の比率で混合された王水を用いて行う。このパターニングにより、第１導電層１のうちバイパス導電部５や保護樹脂層４５から露出した部分が選択的に除去される。この結果、第１導電層１に第３端縁１０１等が形成される。以上の工程を経ることにより、有機薄膜太陽電池モジュールＡ５が得られる。有機薄膜太陽電池モジュールＡ６の製造も同様に行うことができる。 Next, the first conductive layer 1 is patterned. This patterning is performed, for example, using aqua regia in which concentrated hydrochloric acid and concentrated nitric acid are mixed at a ratio of 3: 1. By this patterning, portions of the first conductive layer 1 exposed from the bypass conductive portion 5 and the protective resin layer 45 are selectively removed. As a result, the third edge 101 and the like are formed in the first conductive layer 1. Through the above steps, an organic thin film solar cell module A5 is obtained. The organic thin film solar cell module A6 can be manufactured in the same manner.
　次に、有機薄膜太陽電池モジュールＡ５および電子機器Ｂ５の作用について説明する。 Next, the operation of the organic thin film solar cell module A5 and the electronic device B5 will be described.
　本実施形態によれば、第２端縁４５１および第２外方端縁４５２に隣接する領域において支持基板４１が露出している。この部位には、パッシベーション膜４２や保護樹脂層４５が形成されていない。したがって、この部位をより透明に仕上げることが可能であり、表示部７０２をより鮮明に外観に表すことができる。 According to the present embodiment, the support substrate 41 is exposed in a region adjacent to the second end edge 451 and the second outer end edge 452. In this portion, the passivation film 42 and the protective resin layer 45 are not formed. Therefore, it is possible to finish this portion more transparent, and the display portion 702 can be expressed more clearly.
　第２端縁４５１および第１端縁４２１に隣接する領域のうちバスバー部５１によって覆われた僅かな領域を除いて、支持基板４１には第１導電層１が形成されていない。第１導電層１は、ＩＴＯからなるものの、光線のあたり具合によっては、うっすらと着色されたものとして視認される。本実施形態においては、表示部７０２を外観に表すための領域をことさらに透明に仕上げることが可能であり、より美麗な外観を実現することができる。 The first conductive layer 1 is not formed on the support substrate 41 except for a small area covered with the bus bar portion 51 among the areas adjacent to the second edge 451 and the first edge 421. Although the first conductive layer 1 is made of ITO, the first conductive layer 1 is visually recognized as being slightly colored depending on how light hits. In the present embodiment, it is possible to finish the region for displaying the display unit 702 in an even more transparent manner, and a more beautiful appearance can be realized.
　光電変換層３の第５内方退避端縁３０１および第２導電層２の第４内方退避端縁２０１が、第１端縁４２１および第２端縁４５１と離間していることにより、第２導電層２および光電変換層３がバイパス導電部５と不当に導通することを回避することができる。また、第４内方退避端縁２０１および第５内方退避端縁３０１と第１端縁４２１および第２端縁４５１との間にパッシベーション膜４２が介在していることにより、第２導電層２および光電変換層３とバイパス導電部５のバスバー部５１とがショートすることをより確実に防止可能である。 The fifth inward retracting edge 301 of the photoelectric conversion layer 3 and the fourth inward retracting edge 201 of the second conductive layer 2 are separated from the first end edge 421 and the second end edge 451, thereby The two conductive layers 2 and the photoelectric conversion layer 3 can be prevented from being unduly conducted with the bypass conductive portion 5. Further, since the passivation film 42 is interposed between the fourth inner retracting edge 201 and the fifth inner retracting edge 301 and the first end edge 421 and the second end edge 451, the second conductive layer 2 and the photoelectric conversion layer 3 and the bus bar portion 51 of the bypass conductive portion 5 can be more reliably prevented from short-circuiting.
　保護樹脂層４５をマスクとして用いたパターニングをパッシベーション膜４２に施すことにより、保護樹脂層４５と同形状のパッシベーション膜４２を形成することができる。すなわち、紫外線硬化樹脂などの形状形成に優れた材質を用いて保護樹脂層４５を形成すれば、必ずしも形状形成に優れていない材質からなるパッシベーション膜４２を所望の形状に仕上げることができる。なお、保護樹脂層４５は、パッシベーション膜４２を形成した後に除去してもよい。ただし、保護樹脂層４５を残存させた場合、水分やパーティクル等の第１導電層１、第２導電層２および光電変換層３等への侵入を防止する効果や、有機薄膜太陽電池モジュールＡ５の強度向上を図る効果が期待できる。 The passivation film 42 having the same shape as that of the protective resin layer 45 can be formed by patterning the passivation film 42 using the protective resin layer 45 as a mask. That is, if the protective resin layer 45 is formed using a material excellent in shape formation such as an ultraviolet curable resin, the passivation film 42 made of a material not necessarily excellent in shape formation can be finished in a desired shape. The protective resin layer 45 may be removed after the passivation film 42 is formed. However, when the protective resin layer 45 is left, the effect of preventing intrusion of moisture and particles into the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3 and the like, and the organic thin film solar cell module A5 The effect of improving strength can be expected.
　バイパス導電部５を設けることにより、第１導電層１に拡散してきた正孔を、バスバー部５１を経由して集極部５３へと導くことができる。バイパス導電部５は、第１導電層１よりも低抵抗であるため、電力が熱に変換されてしまうことを抑制することができる。これは、有機薄膜太陽電池モジュールＡ５および有機薄膜太陽電池モジュールＡ６の発電損失を低減するとともに、より大面積の発電領域３１による発電に適している。 By providing the bypass conductive portion 5, the holes diffused in the first conductive layer 1 can be guided to the collector portion 53 via the bus bar portion 51. Since the bypass conductive portion 5 has a lower resistance than the first conductive layer 1, it is possible to prevent power from being converted into heat. This reduces power generation loss of the organic thin film solar cell module A5 and the organic thin film solar cell module A6 and is suitable for power generation by the power generation region 31 having a larger area.
　バイパス導電部５を形成した後に第１導電層１にパターニングを施すことにより、バイパス導電部５の連絡部５２は、第１導電層１の端面ではなく、第１導電層１のうち平面視において有意な面積を有する部分（延出部１０３など）に接する構成となる。これは、第１導電層１とバイパス導電部５との接触抵抗を低下させるとともに、確実な導通に有利である。 By patterning the first conductive layer 1 after forming the bypass conductive portion 5, the connecting portion 52 of the bypass conductive portion 5 is not an end face of the first conductive layer 1 but in a plan view of the first conductive layer 1. The structure is in contact with a portion having a significant area (such as the extension 103). This is advantageous for reliable conduction while lowering the contact resistance between the first conductive layer 1 and the bypass conductive portion 5.
　図６６および図６７は、本発明の変形例を示している。なお、これらの図において、上記実施形態と同一または類似の要素には、上記実施形態と同一の符号を付している。 66 and 67 show a modification of the present invention. In these drawings, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment.
　図６６は、電子機器Ｂ５および有機薄膜太陽電池モジュールＡ５の変形例を示している。本変形例においては、第１導電層１の第３端縁１０１が平面視において第１端縁４２１および第２端縁４５１と一致している。また、上述した例における内側のバスバー部５１は設けられていない。このような変形例は、保護樹脂層４５をマスクとして王水を用いたパターニングを第１導電層１に施すことによって形成される。 FIG. 66 shows a modification of the electronic device B5 and the organic thin film solar cell module A5. In this modification, the third edge 101 of the first conductive layer 1 coincides with the first edge 421 and the second edge 451 in plan view. Further, the inner bus bar portion 51 in the above-described example is not provided. Such a modification is formed by patterning the first conductive layer 1 using aqua regia using the protective resin layer 45 as a mask.
　本変形例によっても、第１端縁４２１および第２端縁４５１に隣接する部位をより透明に仕上げることが可能であり、表示部７０２をより鮮明に外観に表すことができる。 Also according to this modification, it is possible to finish the portions adjacent to the first edge 421 and the second edge 451 more transparent, and the display portion 702 can be expressed more clearly.
　図６７は、電子機器Ｂ５および有機薄膜太陽電池モジュールＡ５の変形例を示している。本変形例においては、第１導電層１は、第３端縁１０１に代えて、第３内方退避端縁１０２を有している。第３内方退避端縁１０２は、平面視において第１端縁４２１および第２端縁４５１よりも内方に退避している。また、上述した例における内側のバスバー部５１は設けられていない。このような変形例は、支持基板４１に第１導電層１を成膜した後に、スリット１９等とともに第３内方退避端縁１０２を形成しておくことによって製造される。 FIG. 67 shows a modification of the electronic device B5 and the organic thin film solar cell module A5. In the present modification, the first conductive layer 1 has a third inward retracting edge 102 instead of the third end edge 101. The third inward retracting edge 102 is retracted inward from the first end edge 421 and the second end edge 451 in a plan view. Further, the inner bus bar portion 51 in the above-described example is not provided. Such a modification is manufactured by forming the third inward retracting edge 102 together with the slit 19 and the like after the first conductive layer 1 is formed on the support substrate 41.
　本変形例によっても、第１端縁４２１および第２端縁４５１に隣接する部位をより透明に仕上げることが可能であり、表示部７０２をより鮮明に外観に表すことができる。 Also according to this modification, it is possible to finish the portions adjacent to the first edge 421 and the second edge 451 more transparent, and the display portion 702 can be expressed more clearly.
　本発明に係る有機薄膜太陽電池モジュール、電子機器、有機薄膜太陽電池モジュールの製造方法は、上述した実施形態に限定されるものではない。本発明に係る有機薄膜太陽電池モジュール、電子機器、有機薄膜太陽電池モジュールの製造方法の具体的な構成は、種々に設計変更自在である。 The manufacturing method of the organic thin film solar cell module, the electronic device, and the organic thin film solar cell module according to the present invention is not limited to the above-described embodiment. The specific configuration of the organic thin film solar cell module, the electronic device, and the method of manufacturing the organic thin film solar cell module according to the present invention can be varied in design in various ways.
　本発明に係る電子機器は、携帯型電話端末をはじめ、太陽光発電を利用可能な様々な電子機器に適用することが可能であり、たとえば腕時計、電子計算機などが挙げられる。 The electronic device according to the present invention can be applied to various electronic devices that can use solar power generation, such as a portable telephone terminal, and examples thereof include a wrist watch and an electronic calculator.
　以下に、本発明の技術的特徴について付記する。 The technical features of the present invention will be described below.
　　〔付記１Ｂ〕
　透明な支持基板と、
　前記支持基板に積層された透明な第１導電層と、
　第２導電層と、
　前記第１導電層および前記第２導電層に挟まれた有機薄膜からなる光電変換層と、
　前記第２導電層を覆うパッシベーション膜と、
を備え、
　前記パッシベーション膜は、第１端縁を有し、
　前記第１端縁に隣接する領域において、前記支持基板が露出している、有機薄膜太陽電池モジュール。
　　〔付記２Ｂ〕
　前記第１導電層は、平面視において前記第１端縁と一致する第３端縁を有する、付記１Ｂに記載の有機薄膜太陽電池モジュール。
　　〔付記３Ｂ〕
　前記第１導電層は、平面視において前記第１端縁よりも内方に退避した第３内方退避端縁を有する、付記１Ｂに記載の有機薄膜太陽電池モジュール。
　　〔付記４Ｂ〕
　前記第２導電層は、平面視において前記第１端縁よりも内方に退避した第４内方退避端縁を有する、付記２Ｂに記載の有機薄膜太陽電池モジュール。
　　〔付記５Ｂ〕
　前記光電変換層は、平面視において前記第１端縁よりも内方に退避した第５内方退避端縁を有する、付記４Ｂに記載の有機薄膜太陽電池モジュール。
　　〔付記６Ｂ〕
　前記第４内方退避端縁は、平面視において前記第５内方退避端縁よりも内方に退避している、付記５Ｂに記載の有機薄膜太陽電池モジュール。
　　〔付記７Ｂ〕
　前記第１端縁は、平面視環状である、付記４Ｂないし６Ｂのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記８Ｂ〕
　前記第３端縁は、平面視環状である、付記７Ｂに記載の有機薄膜太陽電池モジュール。
　　〔付記９Ｂ〕　
　前記第３内方退避端縁は、平面視環状である、付記３Ｂに記載の有機薄膜太陽電池モジュール。
　　〔付記１０Ｂ〕
　前記第４内方退避端縁は、平面視環状である、付記８Ｂまたは９Ｂに記載の有機薄膜太陽電池モジュール。
　　〔付記１１Ｂ〕
　前記第５内方退避端縁は、平面視環状である、付記１０Ｂに記載の有機薄膜太陽電池モジュール。
　　〔付記１２Ｂ〕
　前記第１導電層は、ＩＴＯからなる、付記１Ｂないし１１Ｂのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１３Ｂ〕
　前記第２導電層は、金属からなる、付記１Ｂないし１２Ｂのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１４Ｂ〕
　前記第２導電層は、Ａｌからなる、付記１３Ｂに記載の有機薄膜太陽電池モジュール。
　　〔付記１５Ｂ〕
　前記パッシベーション膜は、ＳｉＮからなる、付記１Ｂないし１４Ｂのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１６Ｂ〕
　前記パッシベーション膜を覆う保護樹脂層を備えており、
　前記保護樹脂層は、平面視において前記第１端縁と一致する第２端縁を有する、付記１Ｂないし１５Ｂのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１７Ｂ〕
　前記第２端縁と前記第１端縁とは、連続した面をなす、付記１６Ｂに記載の有機薄膜太陽電池モジュール。
　　〔付記１８Ｂ〕
　前記第２端縁は、平面視環状である、付記１６Ｂまたは１７Ｂに記載の有機薄膜太陽電池モジュール。
　　〔付記１９Ｂ〕
　前記保護樹脂層は、紫外線硬化樹脂からなる、付記１６Ｂないし１８Ｂのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２０Ｂ〕
　前記保護樹脂層は、平面視において前記光電変換層の少なくとも一部を挟んで前記第２端縁と反対側に位置する第２外方端縁を有し、
　前記パッシベーション膜は、平面視において前記第２外方端縁と一致する第１外方端縁を有し、
　前記第１導電層は、前記第２外方端縁および前記第１外方端縁から外方に延出する延出部を有し、
　前記延出部の少なくとも一部を覆い、且つ前記第１導電層の材料よりも低抵抗の材料からなるバイパス導電部を備える、付記１６Ｂないし１９Ｂのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２１Ｂ〕
　前記第２外方端縁と前記第１外方端縁とは、連続した面をなす、付記２０Ｂに記載の有機薄膜太陽電池モジュール。
　　〔付記２２Ｂ〕
　前記バイパス導電部は、前記第２外方端縁および前記第１外方端縁を覆う、付記２０Ｂまたは２１Ｂに記載の有機薄膜太陽電池モジュール。
　　〔付記２３Ｂ〕
　前記バイパス導電部は、ＡｇＢまたはカーボンを含む、付記２０Ｂないし２２Ｂのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２４Ｂ〕　
　前記第２導電層は、平面視において前記第２外方端縁および前記第１外方端縁よりも内方に退避した第４外方退避端縁を有する、付記２０Ｂないし２３Ｂのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２５Ｂ〕
　前記光電変換層は、平面視において前記第２外方端縁および前記第１外方端縁よりも内方に退避した第５外方退避端縁を有する、付記２０Ｂないし２４Ｂのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２６Ｂ〕
　付記１Ｂないし２５Ｂのいずれかに記載の有機薄膜太陽電池モジュールと、
　前記有機薄膜太陽電池モジュールからの給電によって駆動する駆動部と、
を備えることを特徴とする、電子機器。
　　〔付記２７Ｂ〕
　透明な支持基板に透明な第１導電層を積層する工程と、
　前記第１導電層に有機薄膜からなる光電変換層を積層する工程と、
　前記光電変換層に第２導電層を積層する工程と、
　前記第２導電層を覆うパッシベーション膜を形成する工程と、
　前記パッシベーション膜に第２端縁を有する保護樹脂層を積層する工程と、
　前記第２端縁を境界として、前記パッシベーション膜を部分的に除去することにより平面視において前記第２端縁と一致する第１端縁を前記パッシベーション膜に形成する工程と、
　前記第１導電層を部分的に除去することにより、前記第２端縁および前記第１端縁に隣接する領域において、前記支持基板を露出させる工程と、を備える、有機薄膜太陽電池モジュールの製造方法。
　　〔付記２８Ｂ〕
　前記支持基板を露出させる工程において、平面視において前記第２端縁および前記第１端縁と一致する第３端縁を前記第１導電層に形成する、付記２７Ｂに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記２９Ｂ〕
　前記第２端縁および前記第１端縁は、平面視環状である、付記２８Ｂに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記３０Ｂ〕
　前記第３端縁は、平面視環状である、付記２９Ｂに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記３１Ｂ〕
　前記第１導電層は、ＩＴＯからなる、付記２７Ｂないし３０Ｂのいずれかに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記３２Ｂ〕
　前記第２導電層は、金属からなる、付記２７Ｂないし３１Ｂのいずれかに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記３３Ｂ〕
　前記第２導電層は、Ａｌからなる、付記３２Ｂに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記３４Ｂ〕
　前記パッシベーション膜は、ＳｉＮからなる、付記２７Ｂないし３３Ｂのいずれかに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記３５Ｂ〕
　前記保護樹脂層は、紫外線硬化樹脂からなる、付記２７Ｂないし３４Ｂのいずれかに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記３６Ｂ〕
　前記保護樹脂層を積層する工程において、平面視において前記光電変換層の少なくとも一部を挟んで前記第２端縁と反対側に位置する第２外方端縁を形成し、
　前記第２端縁を境界として、前記パッシベーション膜を部分的に除去することにより平面視において前記第２外方端縁と一致する第１外方端縁を前記パッシベーション膜に形成する工程と、
　前記第１導電層のうち前記第２外方端縁および前記第１外方端縁から外方に延出する延出部の少なくとも一部を覆い、且つ前記第１導電層の材料よりも低抵抗の材料からなるバイパス導電部を形成する工程と、を備える、付記２７Ｂないし３５Ｂのいずれかに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記３７Ｂ〕
　前記バイパス導電部を形成する工程においては、前記バイパス導電部によって前記第２外方端縁および前記第１外方端縁を覆う、付記３６Ｂに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記３８Ｂ〕
　前記バイパス導電部は、ＡｇＢまたはカーボンを含む、付記３６Ｂまたは３７Ｂに記載の有機薄膜太陽電池モジュールの製造方法。 [Appendix 1B]
A transparent support substrate;
A transparent first conductive layer laminated on the support substrate;
A second conductive layer;
A photoelectric conversion layer comprising an organic thin film sandwiched between the first conductive layer and the second conductive layer;
A passivation film covering the second conductive layer;
With
The passivation film has a first edge;
The organic thin-film solar cell module in which the support substrate is exposed in a region adjacent to the first edge.
[Appendix 2B]
The organic thin-film solar cell module according to appendix 1B, wherein the first conductive layer has a third edge that coincides with the first edge in plan view.
[Appendix 3B]
The organic thin-film solar cell module according to Appendix 1B, wherein the first conductive layer has a third inward retracting edge that is retracted inward from the first end edge in plan view.
[Appendix 4B]
The organic thin-film solar cell module according to Appendix 2B, wherein the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
[Appendix 5B]
The organic thin-film solar cell module according to appendix 4B, wherein the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
[Appendix 6B]
The organic thin-film solar cell module according to appendix 5B, wherein the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
[Appendix 7B]
The organic thin-film solar cell module according to any one of appendices 4B to 6B, wherein the first end edge is annular in plan view.
[Appendix 8B]
The organic thin film solar cell module according to appendix 7B, wherein the third end edge is annular in plan view.
[Appendix 9B]
The organic thin film solar cell module according to Supplementary Note 3B, wherein the third inward retracting edge is annular in plan view.
[Appendix 10B]
The organic thin-film solar cell module according to Supplementary Note 8B or 9B, wherein the fourth inward retracting edge is annular in plan view.
[Appendix 11B]
The organic thin-film solar cell module according to Supplementary Note 10B, wherein the fifth inward withdrawal edge is annular in plan view.
[Appendix 12B]
The organic thin film solar cell module according to any one of Supplementary Notes 1B to 11B, wherein the first conductive layer is made of ITO.
[Appendix 13B]
The organic thin film solar cell module according to any one of appendices 1B to 12B, wherein the second conductive layer is made of metal.
[Appendix 14B]
The organic conductive film solar cell module according to appendix 13B, wherein the second conductive layer is made of Al.
[Appendix 15B]
The organic thin-film solar cell module according to any one of appendices 1B to 14B, wherein the passivation film is made of SiN.
[Appendix 16B]
A protective resin layer covering the passivation film;
The said protective resin layer is an organic thin-film solar cell module in any one of additional remarks 1B thru | or 15B which has a 2nd edge corresponding to a said 1st edge in planar view.
[Appendix 17B]
The organic thin film solar cell module according to appendix 16B, wherein the second edge and the first edge form a continuous surface.
[Appendix 18B]
The organic thin film solar cell module according to appendix 16B or 17B, wherein the second end edge is annular in plan view.
[Appendix 19B]
The organic thin-film solar cell module according to any one of Supplementary Notes 16B to 18B, wherein the protective resin layer is made of an ultraviolet curable resin.
[Appendix 20B]
The protective resin layer has a second outer end edge located on the opposite side of the second end edge across at least a part of the photoelectric conversion layer in plan view;
The passivation film has a first outer end edge that coincides with the second outer end edge in plan view,
The first conductive layer has an extension portion extending outward from the second outer end edge and the first outer end edge;
The organic thin-film solar cell module according to any one of supplementary notes 16B to 19B, comprising a bypass conductive portion that covers at least a part of the extension portion and is made of a material having a lower resistance than the material of the first conductive layer.
[Appendix 21B]
The organic thin film solar cell module according to appendix 20B, wherein the second outer end edge and the first outer end edge form a continuous surface.
[Appendix 22B]
The bypass conductive part is the organic thin-film solar cell module according to appendix 20B or 21B, which covers the second outer edge and the first outer edge.
[Appendix 23B]
The organic thin-film solar cell module according to any one of appendices 20B to 22B, wherein the bypass conductive portion includes AgB or carbon.
[Appendix 24B]
The second conductive layer has any one of appendices 20B to 23B having a second outer end edge and a fourth outer retreat end edge that retreats inward from the first outer end edge in a plan view. The organic thin film solar cell module described.
[Appendix 25B]
The photoelectric conversion layer according to any one of appendices 20B to 24B, having a second outer retreat edge and a fifth outer retreat edge that retreats inward from the first outer end edge in a plan view. Organic thin-film solar cell module.
[Appendix 26B]
An organic thin film solar cell module according to any one of Supplementary Notes 1B to 25B;
A drive unit driven by feeding from the organic thin film solar cell module;
An electronic device comprising:
[Appendix 27B]
Laminating a transparent first conductive layer on a transparent support substrate;
Laminating a photoelectric conversion layer made of an organic thin film on the first conductive layer;
Laminating a second conductive layer on the photoelectric conversion layer;
Forming a passivation film covering the second conductive layer;
Laminating a protective resin layer having a second edge on the passivation film;
Forming a first edge on the passivation film that coincides with the second edge in plan view by partially removing the passivation film with the second edge as a boundary;
Exposing the support substrate in a region adjacent to the second edge and the first edge by partially removing the first conductive layer, and manufacturing an organic thin-film solar cell module Method.
[Appendix 28B]
The organic thin-film solar cell module according to appendix 27B, wherein, in the step of exposing the support substrate, a third edge that coincides with the second edge and the first edge in plan view is formed on the first conductive layer. Manufacturing method.
[Appendix 29B]
The manufacturing method of the organic thin-film solar cell module according to appendix 28B, wherein the second end edge and the first end edge are annular in plan view.
[Appendix 30B]
The method for manufacturing an organic thin-film solar cell module according to Appendix 29B, wherein the third end edge is annular in plan view.
[Appendix 31B]
The said 1st conductive layer is a manufacturing method of the organic thin-film solar cell module in any one of appendix 27B thru | or 30B which consists of ITO.
[Appendix 32B]
The method for manufacturing an organic thin-film solar cell module according to any one of appendices 27B to 31B, wherein the second conductive layer is made of metal.
[Appendix 33B]
The method for manufacturing an organic thin film solar cell module according to Supplementary Note 32B, wherein the second conductive layer is made of Al.
[Appendix 34B]
34. The method for manufacturing an organic thin film solar cell module according to any one of appendices 27B to 33B, wherein the passivation film is made of SiN.
[Appendix 35B]
The said protective resin layer is a manufacturing method of the organic thin-film solar cell module in any one of appendix 27B thru | or 34B which consists of ultraviolet curable resin.
[Appendix 36B]
In the step of laminating the protective resin layer, forming a second outer edge located on the opposite side of the second edge with at least a part of the photoelectric conversion layer in plan view,
Forming a first outer edge on the passivation film that coincides with the second outer edge in plan view by partially removing the passivation film with the second edge as a boundary;
The first conductive layer covers at least a part of the second outer end edge and an extended portion extending outward from the first outer end edge, and is lower than the material of the first conductive layer. And a step of forming a bypass conductive portion made of a resistance material. The method for manufacturing an organic thin-film solar cell module according to any one of appendices 27B to 35B.
[Appendix 37B]
In the step of forming the bypass conductive portion, the organic thin-film solar cell module manufacturing method according to appendix 36B, wherein the bypass conductive portion covers the second outer end edge and the first outer end edge.
[Appendix 38B]
The said bypass conductive part is a manufacturing method of the organic thin-film solar cell module of Additional remark 36B or 37B containing AgB or carbon.
［第７－第１２実施形態］
　第７ないし第１２実施形態および図６８～図１１２における符号は、これらの実施形態および図において有効であり、他の実施形態および図における符号とは独立している。ただし、第７ないし第１２実施形態の具体的構成と他の実施形態の具体的構成とは、相互に適宜組合せ可能である。 [Seventh to Twelfth Embodiment]
The reference numerals in the seventh to twelfth embodiments and FIGS. 68 to 112 are valid in these embodiments and figures, and are independent of the reference numerals in the other embodiments and figures. However, the specific configurations of the seventh to twelfth embodiments and the specific configurations of the other embodiments can be appropriately combined with each other.
　本発明において、「透明」とは、透過率が約５０％以上であるものと定義する。また「透明」とは、可視光線に対して、無色透明という意味でも使用する。可視光線は波長約３６０ｎｍ～８３０ｎｍ程度、エネルギー約３．４５ｅＶ～１．４９ｅＶ程度に相当し、この領域で透過率が５０％以上あれば透明である。 In the present invention, “transparent” is defined as having a transmittance of about 50% or more. “Transparent” is also used to mean colorless and transparent to visible light. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.
　図６８は、本発明に係る有機薄膜太陽電池１０を装備する電子機器１００の一例を示している。この電子機器１００は、卓上電子計算機（電卓）である。この電子機器１００は、筐体１１０の表面に配置された表示部１２０と、入力部１３０と、有機薄膜太陽電池１０とを有する。表示部１２０は、たとえば、液晶表示器である。入力部１３０は、いわゆるテン・キーである。この電子機器１００は、入力部１３０からの入力にしたがって演算された結果が表示部１２０に表示される。演算および表示のための電力は、有機薄膜太陽電池１０によって発電された電力が使用される。有機薄膜太陽電池１０は、その受光面１１が筐体１１０の表面に臨むようにして組み込まれている。この有機薄膜太陽電池１０は、矩形のセル１２が横方向に複数並んだ形態を有しており、各セル１２の表面には、本発明によって特徴づけられた以下に説明する構成により、外部から視認できる所望の意匠Ｄが表される。 FIG. 68 shows an example of an electronic device 100 equipped with the organic thin film solar cell 10 according to the present invention. The electronic device 100 is a desktop electronic calculator (calculator). The electronic device 100 includes a display unit 120, an input unit 130, and the organic thin film solar cell 10 that are disposed on the surface of the housing 110. The display unit 120 is, for example, a liquid crystal display. The input unit 130 is a so-called numeric keypad. In the electronic device 100, the result calculated in accordance with the input from the input unit 130 is displayed on the display unit 120. The electric power generated by the organic thin film solar cell 10 is used as electric power for calculation and display. The organic thin-film solar cell 10 is incorporated so that the light receiving surface 11 faces the surface of the housing 110. The organic thin film solar cell 10 has a form in which a plurality of rectangular cells 12 are arranged in the horizontal direction, and the surface of each cell 12 is externally provided by the configuration described below, which is characterized by the present invention. A desired design D that can be visually recognized is represented.
　図６９は本発明の第７～第９実施形態に係る有機薄膜太陽電池１０Ａ～１０Ｃの平面図を示し、図７０は第７実施形態に係る有機薄膜太陽電池１０Ａの構造を示す、図６９のＬＸＸ－ＬＸＸ線に沿う断面図である。なお、図７０は、受光面１１が下方を向くようにして表している。 69 shows a plan view of the organic thin film solar cells 10A to 10C according to the seventh to ninth embodiments of the present invention, and FIG. 70 shows the structure of the organic thin film solar cell 10A according to the seventh embodiment. It is sectional drawing which follows a LXX-LXX line. FIG. 70 shows the light receiving surface 11 facing downward.
　この有機薄膜太陽電池１０Ａは、支持基板２００、第１電極層３１０、光電変換層４００、第２電極層５１０、パッシベーション層６１０、接合層６２０および保護層６３０を有している。 The organic thin film solar cell 10A includes a support substrate 200, a first electrode layer 310, a photoelectric conversion layer 400, a second electrode layer 510, a passivation layer 610, a bonding layer 620, and a protective layer 630.
　支持基板２００は、第１面２０１と、その反対側の第２面２０２とを有し、たとえば、透明なガラスあるいは樹脂からなる。支持基板２００の厚さは、たとえば０．０５ｍｍ～２．０ｍｍであるが、これに限られない。 The support substrate 200 has a first surface 201 and a second surface 202 on the opposite side, and is made of, for example, transparent glass or resin. The thickness of the support substrate 200 is, for example, 0.05 mm to 2.0 mm, but is not limited thereto.
　第１電極層３１０は、支持基板２００の第２面２０２上に形成されている。第１電極層３１０は、透明であり、本実施形態においてはＩＴＯからなる。この第１電極層３１０は、厚み方向に貫通するスリット３１１によってセル１２ごとに分離されている。第１電極層３１０にはまた、支持基板２００と反対側の表面に凹入部（開口部）３２０を設けることにより、薄肉部３１２が形成されている。薄肉部３１２の詳細および技術的意義については後述するが、この第１電極層３１０の一般部３１３の厚みは、たとえば、１００～２００ｎｍであり、薄肉部３１２の厚みは、たとえば、５０～１００ｎｍである。この第１電極層３１０は、光電変換層４００で生じたキャリアが集約される層である。 The first electrode layer 310 is formed on the second surface 202 of the support substrate 200. The first electrode layer 310 is transparent, and is made of ITO in this embodiment. The first electrode layer 310 is separated for each cell 12 by a slit 311 penetrating in the thickness direction. The first electrode layer 310 is also provided with a recessed portion (opening) 320 on the surface opposite to the support substrate 200 to form a thin portion 312. Although details and technical significance of the thin portion 312 will be described later, the thickness of the general portion 313 of the first electrode layer 310 is, for example, 100 to 200 nm, and the thickness of the thin portion 312 is, for example, 50 to 100 nm. is there. The first electrode layer 310 is a layer in which carriers generated in the photoelectric conversion layer 400 are collected.
　光電変換層４００は、第１電極層３１０の支持基板２００と反対側に積層されている。光電変換層４００は、第１電極層３１０に設けたスリット３１１と平面的に一致するスリット４０１により、セル１２ごとに分離されている。これにより、上記スリット３１１に臨む第１電極層３１０の端面と、上記スリット４０１に臨む光電変換層４００の端面は、面一となっている。光電変換層４００は、有機薄膜からなる層であり、受けた光を電力に変換する光電変換機能を発揮する。光電変換層４００の具体的構成は特に限定されないが、その一例を挙げると、バルクヘテロ接合有機活性層と、このバルクヘテロ接合有機活性層に対して第１電極層３１０側に積層された正孔輸送層とからなる。光電変換層４００の厚さは、たとえば１００～２００ｎｍである。光電変換層４００には、第１電極層３１０に形成した凹入部３２０の形態が反映された凹凸４１１が形成されている。なお、光電変換層４００にこのような凹凸４１１が形成されていなくてもよい。 The photoelectric conversion layer 400 is laminated on the opposite side of the first electrode layer 310 from the support substrate 200. The photoelectric conversion layer 400 is separated for each cell 12 by a slit 401 that planarly matches the slit 311 provided in the first electrode layer 310. Thereby, the end surface of the first electrode layer 310 facing the slit 311 and the end surface of the photoelectric conversion layer 400 facing the slit 401 are flush with each other. The photoelectric conversion layer 400 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power. The specific configuration of the photoelectric conversion layer 400 is not particularly limited, and as an example, a bulk heterojunction organic active layer and a hole transport layer stacked on the first electrode layer 310 side with respect to the bulk heterojunction organic active layer are listed. It consists of. The thickness of the photoelectric conversion layer 400 is, for example, 100 to 200 nm. The photoelectric conversion layer 400 is provided with irregularities 411 reflecting the form of the recessed portions 320 formed in the first electrode layer 310. Note that such unevenness 411 may not be formed in the photoelectric conversion layer 400.
　バルクヘテロ接合有機活性層は、ｐ型有機活性層領域とｎ型有機活性層領域が混在し、複雑なバルクへテロｐｎ接合を形成している。ｐ型有機活性層領域は、例えば、Ｐ３ＨＴ（poly(3-hexylthiophene-2,5diyl)）で形成され、ｎ型有機活性層領域は、例えば、ＰＣＢＭ（6,6-phenyl-C61-butyric acid methyl ester）で形成されている。正孔輸送層は、たとえばＰＥＤＯＴ：ＰＳＳで形成されている。 In the bulk heterojunction organic active layer, a p-type organic active layer region and an n-type organic active layer region are mixed to form a complex bulk hetero pn junction. The p-type organic active layer region is formed of, for example, P3HT (poly (3-hexylthiophene-2,5diyl)), and the n-type organic active layer region is, for example, PCBM (6,6-phenyl-C61-butyric acid methyl). ester). The hole transport layer is made of, for example, PEDOT: PSS.
　光電変換層４００の形成に用いられる材質を例示すると、フタロシアニン（Ｐｃ:Phthalocyanine）、亜鉛フタロシアニン（ＺｎＰｃ:Zinc- phthalocyanine）、Ｍｅ－Ｐｔｃｄｉ（N,N'-dimethyl perylene-3,4,9,10-dicarboximide）、フラーレン（C 60 :Buckminster fullerene）が挙げられる。これらの材質は、たとえば真空蒸着に使用される。 Examples of materials used to form the photoelectric conversion layer 400 include phthalocyanine (Pc: Phthhalocyanine), zinc phthalocyanine (ZnPc: Zinc- phthalocyanine), and Me-Ptcdi (N, N'-dimethyl perylene-3,4,9,10). -dicarboximide) and fullerene (C 60: Buckminster fullerene). These materials are used for vacuum deposition, for example.
　また、光電変換層３の形成に用いられる他の材質を例示すると、ＭＤＭＯ－ＰＰＶ（poly[2-methoxy-5-(3,7-dimethyl octyloxy)]-1,4-phenylene vinylene）、ＰＣＤＴＢＴ（poly[N-9'-hepta-decanyl-2,7-carbazole-alt-5,5-(4',7'-di-thienyl-2'1',3'-b3nzothiadizaole)]）、ＰＣ６０ＢＭ（6,6-phenyl-C61-butyric acid methyl ester）、ＰＣ７０ＢＭ（6,6-phenyl-C71-butyric acid methyl ester）が挙げられる。これらの材質は、たとえば溶液プロセルに使用される。 Other materials used for forming the photoelectric conversion layer 3 are exemplified by MDMO-PPV (poly [2-methoxy-5- (3,7-dimethyl-octyloxy)]-1,4-phenylene-vinylene), PCDTBT ( poly [N-9'-hepta-decanyl-2,7-carbazole-alt-5,5- (4 ', 7'-di-thienyl-2'1', 3'-b3nzothiadizaole)]), PC60BM (6 , 6-phenyl-C61-butyric acid methyl ester) and PC70BM (6,6-phenyl-C71-butyric acid methyl ester). These materials are used for, for example, a solution process.
　第２電極層５１０は、各セル１２ごとに、第１電極層３１０と共に支持基板２００の第２面２０２と厚み方向において光電変換層４００を挟むようにして光電変換層４００上に積層されている。本実施形態においては、第２電極層５１０は、たとえばＡｌにより形成されるが、材質は限定されず、Ｗ、Ｍｏ、Ｍｎ、Ｍｇ、Ａｕ、Ａｇに代表される電極性金属により形成することができる。したがって、第２電極層２は、本願の定義において透明ではなく、不透明である。またこの場合、第２電極層５１０の支持基板２００と反対側の表面に、Ａｌ2Ｏ3からなる不動態皮膜（図示略）が形成されていてもよい。第２電極層２の厚さは、たとえば１００～２００ｎｍである。第２電極層５１０は、光電変換層によって生じたキャリアが集約される層である。この第２電極層５１０には、光電変換層４００と同様、第１電極層３１０に形成した凹入部３２０の形態が反映された凹凸５１１が形成されている。なお、第２電極層５１０にこのような凹凸５１１が形成されていなくてもよい。 The second electrode layer 510 is stacked on the photoelectric conversion layer 400 for each cell 12 so as to sandwich the photoelectric conversion layer 400 in the thickness direction with the second surface 202 of the support substrate 200 together with the first electrode layer 310. In the present embodiment, the second electrode layer 510 is formed of, for example, Al, but the material is not limited, and may be formed of an electrode metal typified by W, Mo, Mn, Mg, Au, and Ag. it can. Accordingly, the second electrode layer 2 is not transparent but opaque in the definition of the present application. In this case, a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second electrode layer 510 opposite to the support substrate 200. The thickness of the second electrode layer 2 is, for example, 100 to 200 nm. The second electrode layer 510 is a layer in which carriers generated by the photoelectric conversion layer are collected. Similar to the photoelectric conversion layer 400, the second electrode layer 510 is provided with irregularities 511 reflecting the form of the recessed portions 320 formed in the first electrode layer 310. Note that such unevenness 511 may not be formed in the second electrode layer 510.
　パッシベーション層６１０は、第２電極層５１０上に積層されており、第２電極層５１０および光電変換層４００を保護するとともに、各セル１２を分離するためのスリット３１１内にも進入し、スリット３１１の底部において支持基板２００に密着している。パッシベーション層６１０は、たとえばＳｉＮ、ＳｉＯ2、またはＳｉＯＮからなる。パッシ
ベーション層４２の厚さは、たとえば０．５μｍ～２．０μｍであり、第１電極層３１０、光電変換層４００および第２電極層５１０の各厚みよりも厚い厚みを有しており、これにより、光電変換層４００に外部から水やパーティクル等が進入することを防止し、有機薄膜太陽電池１０Ａの耐久性を向上させることができる。なお、このパッシベーション層６１０は、第１電極層３１０に設けた凹入部３２０の影響を受けずに表面が平坦となる程度の厚みに形成することが好ましい。 The passivation layer 610 is laminated on the second electrode layer 510, protects the second electrode layer 510 and the photoelectric conversion layer 400, and also enters the slit 311 for separating each cell 12, and the slit 311 Is in close contact with the support substrate 200. The passivation layer 610 is made of, for example, SiN, SiO2, or SiON. The thickness of the passivation layer 42 is, for example, 0.5 μm to 2.0 μm, and is thicker than each of the first electrode layer 310, the photoelectric conversion layer 400, and the second electrode layer 510. In addition, it is possible to prevent water, particles and the like from entering the photoelectric conversion layer 400 from the outside, and to improve the durability of the organic thin film solar cell 10A. Note that the passivation layer 610 is preferably formed to a thickness that allows the surface to be flat without being affected by the recessed portion 320 provided in the first electrode layer 310.
　接合層６２０は、パッシベーション層６１０と保護層６３０とを接合する層であり、たとえば樹脂系の接着剤層である。 The bonding layer 620 is a layer that bonds the passivation layer 610 and the protective layer 630, and is, for example, a resin-based adhesive layer.
　保護層６３０は、有機薄膜太陽電池１０Ａを支持基板２００と反対側から保護するために設けられる。保護層６３０は、好ましくはガラス、もしくはフィルムからなるが、その他有機薄膜太陽電池１０Ａを保護しうる透明な材質を適宜採用することができる。保護層４４の厚さは、たとえば３０μｍ～１００μｍである。 The protective layer 630 is provided to protect the organic thin-film solar cell 10A from the side opposite to the support substrate 200. The protective layer 630 is preferably made of glass or a film, but other transparent materials that can protect the organic thin film solar cell 10A can be appropriately employed. The thickness of the protective layer 44 is, for example, 30 μm to 100 μm.
　上記したように、第１電極層３１０には、支持基板２００と反対側に凹入部（開口部）３２０を設けることにより、薄肉部３１２が形成されている。この薄肉部３１２は、支持基板２００の第１面２０１側から視認できる意匠Ｄを表すためのものであり、本実施形態では、図７０に詳示するように、第１電極層３１０の支持基板２００と反対側の面に、幅ｗがたとえば５～２０μｍで直線的に延びる複数の微細なライン状の凹溝３２１をたとえば３０～５０μｍの微細なピッチ間隔ｐで形成することにより、形成している。このような凹溝３２１を形成することにより、支持基板２００の第１面２０１側から見たとき、微細な凹溝３２１における段差部での光の回折作用により、凹溝３２１を設けた領域をホログラムとして視認することができる。したがって、上記のような複数の微細な凹溝３２１を設ける領域の平面的な形状を選択することにより、図６９に示すように、上記支持基板２００の第１面２０１側、すなわち、有機薄膜太陽電池１０Ａの受光面１１に、文字や図柄などの意匠Ｄをホログラムとして表すことが可能となる。なお、上記したように、光電変換層４００および第２電極層５１０には、第１電極層３１０に設けた凹入部３２０の形態が反映された凹凸４１１，５１１が形成されている。そのため、パッシベーション層６１０、接合層６２０および保護層６３０が透明性を有している場合、この有機薄膜太陽電池１０Ａを裏面から観察した場合においても、図７８に示すように、ホログラムとしての意匠Ｄが表れる。 As described above, the thin portion 312 is formed in the first electrode layer 310 by providing the recessed portion (opening portion) 320 on the side opposite to the support substrate 200. This thin portion 312 is for representing the design D that can be visually recognized from the first surface 201 side of the support substrate 200. In this embodiment, as shown in detail in FIG. 70, the support substrate of the first electrode layer 310. A plurality of fine line-shaped concave grooves 321 linearly extending with a width w of, for example, 5 to 20 μm are formed on the surface opposite to 200 by forming a fine pitch interval p of, for example, 30 to 50 μm. Yes. By forming such a groove 321, when viewed from the first surface 201 side of the support substrate 200, the region where the groove 321 is provided can be obtained by the light diffraction action at the step portion in the minute groove 321. It can be visually recognized as a hologram. Therefore, by selecting the planar shape of the region where the plurality of fine grooves 321 as described above are provided, as shown in FIG. 69, the first surface 201 side of the support substrate 200, that is, the organic thin film solar cell The design D such as characters and designs can be represented as a hologram on the light receiving surface 11 of the battery 10A. In addition, as described above, the photoelectric conversion layer 400 and the second electrode layer 510 are provided with the unevenness 411 and 511 reflecting the shape of the recessed portion 320 provided in the first electrode layer 310. Therefore, when the passivation layer 610, the bonding layer 620, and the protective layer 630 are transparent, even when the organic thin-film solar cell 10A is observed from the back side, as shown in FIG. Appears.
　次に、有機薄膜太陽電池１０Ａの製造方法について、図７１～図７７を参照して以下に説明する。 Next, a method for manufacturing the organic thin film solar cell 10A will be described below with reference to FIGS.
　まず、図７１に示すように支持基板２００を用意し、そして、支持基板２００の第２面２０２にたとえばスパッタ法などの一般的な手法によりＩＴＯ３００を成膜する。次いで、図７２に示すように、該ＩＴＯ３００にパターニングを行うことにより矩形のセル１２ごとに分離された第１電極層３１０を形成する。各第１電極層３１０は、互いに独立しており、隣り合う第１電極層３１０間は、スリット３１１により分離された格好となる。ＩＴＯに対するパターニング手法としては、たとえばウエットエッチングを用いた手法、ドライエッチングを用いた手法、レーザパターニングを用いた手法が適宜採用される。なお、第１電極層３１０は、上記に限られず、印刷法によって、支持基板２００の第２面２０２上に直接的にＩＴＯをパターニングすることで形成するようにしてもよい。 First, as shown in FIG. 71, a support substrate 200 is prepared, and ITO 300 is formed on the second surface 202 of the support substrate 200 by a general method such as sputtering. Next, as shown in FIG. 72, the ITO 300 is patterned to form first electrode layers 310 separated for each rectangular cell 12. The first electrode layers 310 are independent from each other, and the adjacent first electrode layers 310 are separated by the slits 311. As a patterning technique for ITO, for example, a technique using wet etching, a technique using dry etching, and a technique using laser patterning are appropriately employed. The first electrode layer 310 is not limited to the above, and may be formed by directly patterning ITO on the second surface 202 of the support substrate 200 by a printing method.
　次に、図７３に示すように、第１電極層３１０に、その露出表面（支持基板２００と反対側の面）に凹溝（開口部）３２１を設けることにより、薄肉部３１２を形成する。具体的には、第１電極層３１０上の意匠Ｄを表すべき領域に複数の凹溝３２１を形成する。上記したように、本実施形態では、第１電極層３１０の厚さ１００～２００ｎｍであり、複数の凹溝３２１は、幅ｗがたとえば５～２０μｍのライン状であり、配列ピッチｐが３０～５０μｍである。また、薄肉部３１２の厚さは５０～１００ｎｍであるから、上記凹溝３２１の深さは５０～１００ｎｍである。このような微細な幅ｗの凹溝３２１を微細なピッチ間隔ｐで、しかも、微小厚さの第１電極層３１０上に形成する手法としては、所定出力のレーザスポットを第１電極層３１０上に走査することにより行うことが適当である。なお、ＩＴＯ３００にスリット３１１を設けてセル１２ごとに分離した第１電極層３１０を形成する工程（図７２）と、第１電極層３１０に凹溝３２１を設けて薄肉部３１２を形成する工程（図７３）は、順序を逆にしてもよい。 Next, as shown in FIG. 73, a thin-walled portion 312 is formed in the first electrode layer 310 by providing a concave groove (opening) 321 on the exposed surface (surface opposite to the support substrate 200). Specifically, a plurality of concave grooves 321 are formed in a region that should represent the design D on the first electrode layer 310. As described above, in the present embodiment, the thickness of the first electrode layer 310 is 100 to 200 nm, the plurality of concave grooves 321 are in a line shape having a width w of, for example, 5 to 20 μm, and the arrangement pitch p is 30 to 50 μm. Further, since the thickness of the thin portion 312 is 50 to 100 nm, the depth of the concave groove 321 is 50 to 100 nm. As a method of forming the concave groove 321 having such a fine width w on the first electrode layer 310 having a fine pitch interval p and a minute thickness, a laser spot having a predetermined output is formed on the first electrode layer 310. It is appropriate to carry out by scanning. In addition, the process (FIG. 72) which forms the slit 311 in ITO300, and isolate | separated every cell 12 (FIG. 72), and the process of providing the groove 321 in the 1st electrode layer 310, and forming the thin part 312 (FIG. In FIG. 73), the order may be reversed.
　また、第１電極層３１０に凹溝３２１を設ける工程は、ＩＴＯ３００にスリット３１１を設ける工程と同時にドライエッチングによって行うことが可能である。その場合、レジストにおける凹溝３２１のための開口幅をスリット３１１のための開口幅より小とすることにより、エッチングレートを互いに異ならせ、除去深さの異なる凹溝３２１とスリット３１１とを同時に形成することができる。 Also, the step of providing the concave groove 321 in the first electrode layer 310 can be performed by dry etching simultaneously with the step of providing the slit 311 in the ITO 300. In that case, by making the opening width for the concave groove 321 in the resist smaller than the opening width for the slit 311, the etching rates are made different from each other, and the concave groove 321 and the slit 311 having different removal depths are formed simultaneously. can do.
　次に、図７４に示すように、光電変換層４００を形成する。光電変換層４００の形成は、たとえば、スピンコート塗布により支持基板２００上および第１電極層３１０上に有機膜を成膜した後に、酸素プラズマエッチング、あるいはレーザパターニングを用いることによって、矩形の第１電極層３１０の平面形状と一致した平面形状に仕上げることにより行う。なお、光電変換層４００は、上記に限定されず、スリットコート法、キャピラリーコート法、グラビア印刷やスクリーン印刷などの印刷法によって、支持基板２００上および第１電極層３１０上に直接的に有機膜をパターニングすることで形成するようにしてもよい。 Next, as shown in FIG. 74, a photoelectric conversion layer 400 is formed. The photoelectric conversion layer 400 is formed by, for example, forming an organic film on the support substrate 200 and the first electrode layer 310 by spin coating and then using oxygen plasma etching or laser patterning to form a rectangular first film. This is done by finishing to a planar shape that matches the planar shape of the electrode layer 310. The photoelectric conversion layer 400 is not limited to the above, and an organic film is directly formed on the support substrate 200 and the first electrode layer 310 by a slit coating method, a capillary coating method, a printing method such as gravure printing or screen printing. It may be formed by patterning.
　次に、図７５に示すように、第２電極層５１０を形成する。第２電極層５１０の形成は、たとえば上述した金属を真空加熱蒸着法によって支持基板２００、第１電極層３１０および光電変換層４００上に金属膜を成膜した後、この金属膜にたとえばマスク層を用いたエッチングを行うことによりパターニングを施すことにより行う。このパターニングにより、光電変換層４００上に第２電極層５１０を形成する。この後は、図７６に示すように、たとえばプラズマＣＶＤ法によってＳｉＮ、ＳｉＯ2、またはＳｉＯＮを支持基板２００、第１電極層３１０、光電変換層４００および第２電極層５１０上に亙って成膜することにより、パッシベーション層６１０を形成する。そして、パッシベーション層６１０に接合層６２０（図７７）を介して保護層４４を接合する。以上の工程を経ることにより、図７０に示した有機薄膜太陽電池１０Ａが得られる。 Next, as shown in FIG. 75, a second electrode layer 510 is formed. The second electrode layer 510 is formed by, for example, forming a metal film on the support substrate 200, the first electrode layer 310, and the photoelectric conversion layer 400 by using the above-described metal by vacuum heating vapor deposition, and then, for example, forming a mask layer on the metal film. This is performed by performing patterning by performing etching using. By this patterning, the second electrode layer 510 is formed on the photoelectric conversion layer 400. Thereafter, as shown in FIG. 76, for example, SiN, SiO2, or SiON is formed on the support substrate 200, the first electrode layer 310, the photoelectric conversion layer 400, and the second electrode layer 510 by plasma CVD. Thus, a passivation layer 610 is formed. Then, the protective layer 44 is bonded to the passivation layer 610 via the bonding layer 620 (FIG. 77). Through the above steps, the organic thin-film solar cell 10A shown in FIG. 70 is obtained.
　次に、有機薄膜太陽電池１０Ａの作用について説明する。 Next, the operation of the organic thin film solar cell 10A will be described.
　本実施形態に係る有機薄膜太陽電池１０Ａによれば、支持基板２００と光電変換層４００との間の第１電極層３１０に凹入部（開口部）３２０を形成することにより薄肉部３１２を設けて意匠Ｄを構成し、この意匠Ｄを支持基板２００側から視認できる構成としたので、有機薄膜太陽電池１０に追加の部材を積層させることや外側に印刷を施すことなどをすることなく、当該有機薄膜太陽電池１０Ａの受光面１１に意匠Ｄを表すことができる。また、このようにして表される意匠Ｄが外物との接触や摩擦によって品位低下を招いたり、消失したりすることもなく、意匠Ｄ表示の品位を保つことができる。 According to the organic thin-film solar cell 10A according to the present embodiment, the thin-walled portion 312 is provided by forming the recessed portion (opening) 320 in the first electrode layer 310 between the support substrate 200 and the photoelectric conversion layer 400. Since the design D is configured and the design D is configured to be visible from the support substrate 200 side, the organic thin film solar cell 10 can be laminated without adding an additional member or printing on the outside. The design D can be represented on the light receiving surface 11 of the thin film solar cell 10A. In addition, the design D displayed in this way can maintain the quality of the design D display without causing deterioration or disappearance of the design D due to contact or friction with an external object.
　また、本実施形態に係る有機薄膜太陽電池１０Ａによれば、第１電極層３１０に対する加工により受光面１１から視認できるようにホログラムとしての意匠Ｄを表すことができるので、当該有機薄膜太陽電池１０Ａまたはこれを備える電子機器１００の模造品対策に役立つ。 In addition, according to the organic thin film solar cell 10A according to the present embodiment, the design D as a hologram can be expressed so as to be visible from the light receiving surface 11 by processing the first electrode layer 310, and therefore the organic thin film solar cell 10A. Or it is useful for counterfeit measures of the electronic device 100 provided with this.
　さらに、本実施形態に係る有機薄膜太陽電池１０Ａによれば、第１電極層３１０にこれを貫通しない薄肉部３１２を設けて意匠Ｄを構成しているので、意匠Ｄを構成することによっても光電変換層４００の有効発電面積を減じる必要がない。このため、意匠Ｄを構成した場合であっても有機薄膜太陽電池１０Ａとしての発電効率の低減を抑制することができる。 Furthermore, according to the organic thin-film solar cell 10A according to the present embodiment, the design D is configured by providing the thin electrode portion 312 that does not penetrate the first electrode layer 310. There is no need to reduce the effective power generation area of the conversion layer 400. For this reason, even if it is a case where the design D is comprised, the reduction | decrease in the electric power generation efficiency as 10 A of organic thin film solar cells can be suppressed.
　図７９は本発明の第８実施形態に係る有機薄膜太陽電池１０Ｂの構造を示し、図６９のＬＸＸ－ＬＸＸ線に沿う拡大断面に相当する図である。同図において、図７０に示した第７実施形態に係る有機薄膜太陽電池１０Ａと同一または同等の部材または部分には、同一の符号を付してある。 FIG. 79 shows the structure of an organic thin-film solar cell 10B according to the eighth embodiment of the present invention, and corresponds to an enlarged cross section taken along line LXX-LXX in FIG. In the figure, the same or similar members or parts as those of the organic thin-film solar cell 10A according to the seventh embodiment shown in FIG.
　この有機薄膜太陽電池１０Ｂは、支持基板２００、第１電極層３１０、光電変換層４００、第２電極層５１０、パッシベーション層６１０、接合層６２０および保護層６３０を有している。 This organic thin film solar cell 10B has a support substrate 200, a first electrode layer 310, a photoelectric conversion layer 400, a second electrode layer 510, a passivation layer 610, a bonding layer 620, and a protective layer 630.
　支持基板２００は、第１面２０１と、その反対側の第２面２０２とを有し、たとえば、透明なガラスあるいは樹脂からなる。支持基板２００の厚さは、たとえば０．０５ｍｍ～２．０ｍｍであるがこれに限定されない。 The support substrate 200 has a first surface 201 and a second surface 202 on the opposite side, and is made of, for example, transparent glass or resin. The thickness of the support substrate 200 is, for example, 0.05 mm to 2.0 mm, but is not limited thereto.
　第１電極層３１０は、支持基板２００の第２面２０２上に形成されている。第１電極層３１０は、透明であり、本実施形態においてはＩＴＯからなる。この第１電極層３１０は、厚み方向に貫通するスリット３１１によってセル１２ごとに分離されている。第１電極層３１０にはまた、支持基板２００側の表面に凹入部（開口部）３２０を設けることにより、薄肉部３１２が形成されている。薄肉部３１２の詳細および技術的意義については後述するが、この第１電極層３１０の一般部３１３の厚みは、たとえば、１００～２００ｎｍであり、薄肉部３１２の厚みは、たとえば、５０～１００ｎｍである。この第１電極層３１０は、光電変換層４００で生じたキャリアが集約される層である。 The first electrode layer 310 is formed on the second surface 202 of the support substrate 200. The first electrode layer 310 is transparent, and is made of ITO in this embodiment. The first electrode layer 310 is separated for each cell 12 by a slit 311 penetrating in the thickness direction. The first electrode layer 310 is also provided with a recessed portion (opening) 320 on the surface on the support substrate 200 side, whereby a thin portion 312 is formed. Although details and technical significance of the thin portion 312 will be described later, the thickness of the general portion 313 of the first electrode layer 310 is, for example, 100 to 200 nm, and the thickness of the thin portion 312 is, for example, 50 to 100 nm. is there. The first electrode layer 310 is a layer in which carriers generated in the photoelectric conversion layer 400 are collected.
　光電変換層４００は、第１電極層３１０の支持基板２００と反対側に積層されている。光電変換層４００は、第１電極層３１０に設けたスリット３１１と平面的に一致するスリット４０１により、セル１２ごとに分離されている。これにより、上記スリット３１１に臨む第１電極層３１０の端面と、上記スリット４０１に臨む光電変換層４００の端面は、面一となっている。光電変換層４００は、有機薄膜からなる層であり、受けた光を電力に変換する光電変換機能を発揮する。光電変換層４００の具体的構成については、第７実施形態に係る有機薄膜太陽電池１０Ａについて上述したのと同様である。光電変換層４００の厚さは、たとえば１００～２００ｎｍである。 The photoelectric conversion layer 400 is laminated on the opposite side of the first electrode layer 310 from the support substrate 200. The photoelectric conversion layer 400 is separated for each cell 12 by a slit 401 that planarly matches the slit 311 provided in the first electrode layer 310. Thereby, the end surface of the first electrode layer 310 facing the slit 311 and the end surface of the photoelectric conversion layer 400 facing the slit 401 are flush with each other. The photoelectric conversion layer 400 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power. The specific configuration of the photoelectric conversion layer 400 is the same as that described above for the organic thin-film solar cell 10A according to the seventh embodiment. The thickness of the photoelectric conversion layer 400 is, for example, 100 to 200 nm.
　第２電極層５１０は、各セル１２ごとに、第１電極層３１０と共に支持基板２００の第２面２０２と厚み方向において光電変換層４００を挟むようにして光電変換層４００上に積層されている。本実施形態においては、第２電極層５１０は、たとえばＡｌにより形成されるが、材質は限定されず、第７実施形態について上述したのと同様、Ｗ、Ｍｏ、Ｍｎ、Ｍｇ、Ａｕ、Ａｇに代表される電極性金属により形成することができる。したがって、第２電極層２は、本願の定義において透明ではなく、不透明である。またこの場合、第２電極層５１０の支持基板２００と反対側の表面に、Ａｌ2Ｏ3からなる不動態皮膜（図示略）が形成されていてもよい。第２電極層２の厚さは、たとえば１００～２００ｎｍである。第２電極層５１０は、光電変換層によって生じたキャリアが集約される層である。 The second electrode layer 510 is stacked on the photoelectric conversion layer 400 for each cell 12 so as to sandwich the photoelectric conversion layer 400 in the thickness direction with the second surface 202 of the support substrate 200 together with the first electrode layer 310. In the present embodiment, the second electrode layer 510 is formed of, for example, Al. However, the material is not limited, and W, Mo, Mn, Mg, Au, and Ag are the same as described in the seventh embodiment. It can be formed of a representative electrode metal. Accordingly, the second electrode layer 2 is not transparent but opaque in the definition of the present application. In this case, a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second electrode layer 510 opposite to the support substrate 200. The thickness of the second electrode layer 2 is, for example, 100 to 200 nm. The second electrode layer 510 is a layer in which carriers generated by the photoelectric conversion layer are collected.
　パッシベーション層６１０は、第２電極層５１０上に積層されており、第２電極層５１０および光電変換層４００を保護するとともに、各セル１２を分離するためのスリット３１１内にも進入し、スリット３１１の底部において支持基板２００に密着している。パッシベーション層６１０は、たとえばＳｉＮ、ＳｉＯ2、またはＳｉＯＮからなる。パッシ
ベーション層６１０の厚さは、たとえば０．５μｍ～２．０μｍであり、第１電極層３１０、光電変換層４００および第２電極層５１０の各厚みよりも厚い厚みを有しており、これにより、光電変換層４００に外部から水やパーティクル等が進入することを防止し、有機薄膜太陽電池１０Ｂの耐久性を向上させることができる。 The passivation layer 610 is laminated on the second electrode layer 510, protects the second electrode layer 510 and the photoelectric conversion layer 400, and also enters the slit 311 for separating each cell 12, and the slit 311 Is in close contact with the support substrate 200. The passivation layer 610 is made of, for example, SiN, SiO2, or SiON. The thickness of the passivation layer 610 is, for example, 0.5 μm to 2.0 μm, and is thicker than each of the first electrode layer 310, the photoelectric conversion layer 400, and the second electrode layer 510. In addition, it is possible to prevent water, particles and the like from entering the photoelectric conversion layer 400 from the outside, and to improve the durability of the organic thin film solar cell 10B.
　接合層６２０は、パッシベーション層６１０と保護層６３０とを接合する層であり、たとえば樹脂系の接着剤層である。 The bonding layer 620 is a layer that bonds the passivation layer 610 and the protective layer 630, and is, for example, a resin-based adhesive layer.
　保護層６３０は、有機薄膜太陽電池１０Ｂを支持基板２００と反対側から保護するために設けられる。保護層６３０は、好ましくはガラス、もしくはフィルムからなるが、その他有機薄膜太陽電池１０Ｂを保護しうる透明な材質を適宜採用することができる。保護層６３０の厚さは、たとえば３０μｍ～１００μｍである。 The protective layer 630 is provided to protect the organic thin-film solar cell 10B from the side opposite to the support substrate 200. The protective layer 630 is preferably made of glass or a film, but other transparent materials that can protect the organic thin film solar cell 10B can be appropriately employed. The thickness of the protective layer 630 is, for example, 30 μm to 100 μm.
　上記したように、第１電極層３１０には、支持基板２００側の表面に凹入部（開口部）３２０を設けることにより、薄肉部３１２が形成されている。この薄肉部３１２は、後記するように、支持基板２００の第１面２０１側から視認できる意匠Ｄを表すためのものであり、本実施形態では、図７８に詳示するように、第１電極層３１０の支持基板２００側に、幅ｗがたとえば５～２０μｍで直線的に延びる複数の微細な凹溝３２１をたとえば３０～５０μｍの微細なピッチ間隔ｐで形成することにより、形成している。このような凹溝を形成することにより、支持基板２００の第１面側から見たとき、微細な凹溝３２１における段差部での光の回折作用により、凹溝３２１を設けた領域をホログラムとして視認することができる。したがって、上記のような複数の微細な凹溝３２１を設ける領域の平面的な形状を選択することにより、図７０に示すように、上記支持基板２００の第１面側、すなわち、有機薄膜太陽電池１０Ｂの受光面１１に、文字や図柄などの意匠Ｄをホログラムとして表すことが可能となる。また、この有機薄膜太陽電池１０Ｂにおいては、第１電極層３１０の支持基板２００側に凹溝３２１を設けているので、第１電極層３１０の支持基板２００と反対側の面を平坦にすることができ、これに伴い、光電変換層４００および第２電極層６１０の表面を平坦にすることができる。 As described above, the thin portion 312 is formed in the first electrode layer 310 by providing the recessed portion (opening portion) 320 on the surface on the support substrate 200 side. As will be described later, the thin portion 312 is for representing the design D that can be viewed from the first surface 201 side of the support substrate 200. In this embodiment, as shown in detail in FIG. A plurality of minute concave grooves 321 having a width w of, for example, 5 to 20 μm and linearly extending on the support substrate 200 side of the layer 310 are formed at a minute pitch interval p of, for example, 30 to 50 μm. By forming such a concave groove, when viewed from the first surface side of the support substrate 200, the region where the concave groove 321 is provided as a hologram due to the light diffraction action at the step portion in the fine concave groove 321. It can be visually recognized. Accordingly, by selecting the planar shape of the region where the plurality of fine grooves 321 as described above are provided, as shown in FIG. 70, the first surface side of the support substrate 200, that is, the organic thin film solar cell. The design D such as characters and designs can be represented as a hologram on the light receiving surface 11 of 10B. Moreover, in this organic thin film solar cell 10B, since the ditch | groove 321 is provided in the support substrate 200 side of the 1st electrode layer 310, the surface on the opposite side to the support substrate 200 of the 1st electrode layer 310 is made flat. Accordingly, the surfaces of the photoelectric conversion layer 400 and the second electrode layer 610 can be flattened.
　次に、有機薄膜太陽電池１０Ｂの製造方法について、図８０～図８６を参照して以下に説明する。 Next, a method for manufacturing the organic thin-film solar cell 10B will be described below with reference to FIGS.
　まず、図８０に示すように支持基板２００を用意し、支持基板２００の第２面２０２にたとえばスパッタ法などの一般的な手法によりＩＴＯ３００を成膜する。次いで、図８１に示すように、該ＩＴＯ３００にパターニングを行うことにより矩形のセル１２ごとに分離された第１電極層３１０を形成する。各第１電極層３１０は、互いに独立しており、隣り合う第１電極層３１０間は、スリット３１１により分離された格好となる。ＩＴＯに対するパターニング手法としては、たとえばウエットエッチングを用いた手法、ドライエッチングを用いた手法、レーザパターニングを用いた手法が適宜採用される。なお、第１電極層３１０は、上記に限られず、印刷法によって、支持基板２００の第２面２０２上に直接的にＩＴＯをパターニングすることで形成するようにしてもよい。 First, as shown in FIG. 80, a support substrate 200 is prepared, and an ITO 300 is formed on the second surface 202 of the support substrate 200 by a general method such as sputtering. Next, as shown in FIG. 81, the first electrode layer 310 separated for each rectangular cell 12 is formed by patterning the ITO 300. The first electrode layers 310 are independent from each other, and the adjacent first electrode layers 310 are separated by the slits 311. As a patterning technique for ITO, for example, a technique using wet etching, a technique using dry etching, and a technique using laser patterning are appropriately employed. The first electrode layer 310 is not limited to the above, and may be formed by directly patterning ITO on the second surface 202 of the support substrate 200 by a printing method.
　次に、図８２に示すように、光電変換層４００を形成する。光電変換層４００の形成は、たとえば、スピンコート塗布により支持基板２００上および第１電極層３１０上に有機膜を成膜した後に、酸素プラズマエッチング、あるいはレーザパターニングを用いることによって、矩形の第１電極層３１０の平面形状と一致した平面形状に仕上げることにより行う。なお、光電変換層４００は、上記に限定されず、スリットコート法、キャピラリーコート法、グラビア印刷やスクリーン印刷などの印刷法によって、支持基板２００上および第１電極層３１０上に直接的に有機膜をパターニングすることで形成するようにしてもよい。 Next, as shown in FIG. 82, a photoelectric conversion layer 400 is formed. The photoelectric conversion layer 400 is formed by, for example, forming an organic film on the support substrate 200 and the first electrode layer 310 by spin coating and then using oxygen plasma etching or laser patterning to form a rectangular first film. This is done by finishing to a planar shape that matches the planar shape of the electrode layer 310. The photoelectric conversion layer 400 is not limited to the above, and an organic film is directly formed on the support substrate 200 and the first electrode layer 310 by a slit coating method, a capillary coating method, a printing method such as gravure printing or screen printing. It may be formed by patterning.
　次に、図８３に示すように、第２電極層５１０を形成する。第２電極層５１０の形成は、たとえば上述した金属を真空加熱蒸着法によって支持基板２００、第１電極層３１０および光電変換層４００上に金属膜を成膜する。次に、この金属膜にたとえばマスク層を用いたエッチングを行うことによりパターニングを施すことにより行う。このパターニングにより、光電変換層４００上に第２電極層５１０を形成する。この後は、図８４に示すように、たとえばプラズマＣＶＤ法によってＳｉＮ、ＳｉＯ2またはＳｉＯＮを支持基板２００、第１電極層３１０、光電変換層４００および第２電極層５１０上に亙って成膜することにより、パッシベーション層６１０を形成する。 Next, as shown in FIG. 83, a second electrode layer 510 is formed. The second electrode layer 510 is formed by forming a metal film on the support substrate 200, the first electrode layer 310, and the photoelectric conversion layer 400 using, for example, the above-described metal by vacuum heating evaporation. Next, the metal film is patterned by performing etching using, for example, a mask layer. By this patterning, the second electrode layer 510 is formed on the photoelectric conversion layer 400. Thereafter, as shown in FIG. 84, SiN, SiO2 or SiON is formed over the support substrate 200, the first electrode layer 310, the photoelectric conversion layer 400 and the second electrode layer 510 by, for example, plasma CVD. Thereby, the passivation layer 610 is formed.
　次に、図８５に示すように、第１電極層３１０に、支持基板２００側の表面に凹溝（開口部）３２１を設けることにより、薄肉部３１２を形成する。具体的には、第１電極層３１０上の意匠Ｄを表すべき領域に複数の凹溝３２１を形成する。上記したように、本実施形態では、第１電極層３１０の厚さ１００～２００ｎｍであり、複数の凹溝３２１は、幅ｗがたとえば５～２０μｍであり、配列ピッチｐが３０～５０μｍである。また、薄肉部３１２の厚さは５０～１００ｎｍであるから、上記凹溝３２１の深さは５０～１００ｎｍである。このような微細な幅ｗの凹溝３２１を微細なピッチ間隔ｐで、しかも、微小厚さの第１電極層３１０上に形成する手法としては、所定出力のレーザを透明な支持基板２００の第１面２０１側から第１電極層３１０上に照射し、レーザスポットを走査することにより行うことが適当である。 Next, as shown in FIG. 85, a thin-walled portion 312 is formed in the first electrode layer 310 by providing a concave groove (opening) 321 on the surface on the support substrate 200 side. Specifically, a plurality of concave grooves 321 are formed in a region that should represent the design D on the first electrode layer 310. As described above, in the present embodiment, the thickness of the first electrode layer 310 is 100 to 200 nm, the plurality of concave grooves 321 have a width w of, for example, 5 to 20 μm, and an arrangement pitch p of 30 to 50 μm. . Further, since the thickness of the thin portion 312 is 50 to 100 nm, the depth of the concave groove 321 is 50 to 100 nm. As a method of forming the concave groove 321 having such a minute width w on the first electrode layer 310 having a minute pitch interval p and a minute thickness, a laser having a predetermined output is applied to the transparent support substrate 200. It is appropriate to irradiate the first electrode layer 310 from the one surface 201 side and scan the laser spot.
　そして、パッシベーション層６１０に接合層６２０（図８６）を介して保護層６３０を接合する。以上の工程を経ることにより、図７９に示した有機薄膜太陽電池１０Ｂが得られる。 Then, the protective layer 630 is bonded to the passivation layer 610 via the bonding layer 620 (FIG. 86). Through the above steps, the organic thin film solar cell 10B shown in FIG. 79 is obtained.
　なお、第１電極層３１０にその支持基板２００側の表面に凹溝（開口部）３２１を設けて薄肉部３１２を形成するにあたっては、上記したように、支持基板２００の第１面側からレーザを照射し、かつレーザスポットを走査するが、かかるステップは、上記第１電極層３１０を形成した後、上記光電変換層４００を形成した後、上記第２電極層５１０を形成した後、あるいは、保護層６３０まで形成した後、のいずれか時点で行ってもよい。保護層６３０を形成した後に第１電極層３１０に支持基盤２００側の凹溝３２１を設ける場合には、製造工程において太陽電池１０Ｂを保護層６３０によりさらに強化した状態で凹溝３２１を設けることができるので、太陽電池１０Ｂの製造信頼性が向上する。 In forming the thin portion 312 by providing the first electrode layer 310 with the concave groove (opening) 321 on the surface on the support substrate 200 side, the laser is applied from the first surface side of the support substrate 200 as described above. And after scanning the laser spot, after the first electrode layer 310 is formed, the photoelectric conversion layer 400 is formed, the second electrode layer 510 is formed, or After forming up to the protective layer 630, it may be performed at any time. In the case where the concave groove 321 on the support base 200 side is provided in the first electrode layer 310 after the protective layer 630 is formed, the concave groove 321 may be provided in a state where the solar cell 10B is further strengthened by the protective layer 630 in the manufacturing process. Therefore, the manufacturing reliability of the solar cell 10B is improved.
　次に、有機薄膜太陽電池１０Ｂの作用について説明する。 Next, the operation of the organic thin film solar cell 10B will be described.
　本実施形態に係る有機薄膜太陽電池１０Ｂによれば、支持基板２００と光電変換層４００との間の第１電極層３１０に凹溝（開口部）３２１を形成することによる薄肉部３１２を設けて意匠Ｄを構成し、この意匠Ｄを支持基板２００側から視認できる構成としたので、有機薄膜太陽電池１０Ｂに追加の部材を積層させることや外側に印刷を施すことなどをすることなく、当該有機薄膜太陽電池１０Ｂの受光面１１に意匠Ｄを表すことができる。また、このようにして表される意匠Ｄが外物との接触や摩擦によって品位低下を招いたり、消失したりすることもなく、意匠表示の品位を保つことができる。 According to the organic thin-film solar cell 10 </ b> B according to the present embodiment, the thin portion 312 is formed by forming the concave groove (opening) 321 in the first electrode layer 310 between the support substrate 200 and the photoelectric conversion layer 400. Since the design D is configured and the design D is configured to be visible from the support substrate 200 side, the organic thin film solar cell 10B can be laminated without adding an additional member or printing on the outside. The design D can be represented on the light receiving surface 11 of the thin film solar cell 10B. Further, the design D represented as described above can be maintained in the quality of the design display without causing deterioration or disappearance of the design D due to contact or friction with an external object.
　また、本実施形態に係る有機薄膜太陽電池１０Ｂによれば、第１電極層３１０に対する加工により受光面１１から視認できるようにホログラムとして意匠Ｄを表すことができるので、当該有機薄膜太陽電池１０Ｂまたはこれを備える電子機器１００の模造品対策に役立つ。 Further, according to the organic thin film solar cell 10B according to the present embodiment, the design D can be expressed as a hologram so that the design D can be viewed from the light receiving surface 11 by processing on the first electrode layer 310. This is useful for counterfeit countermeasures of the electronic device 100 having this.
　さらに、本実施形態に係る有機薄膜太陽電池１０Ｂによれば、第１電極層３１０にこれを貫通しない薄肉部３１２を設けて意匠Ｄを構成しているので、意匠Ｄを構成することによっても光電変換層４００の有効発電面積を減じる必要がない。このため、意匠Ｄを構成した場合であっも有機薄膜太陽電池１０Ｂとしての発電効率の低減を抑制することができる。 Furthermore, according to the organic thin-film solar cell 10B according to the present embodiment, the design D is configured by providing the first electrode layer 310 with the thin-walled portion 312 that does not penetrate the first electrode layer 310. There is no need to reduce the effective power generation area of the conversion layer 400. For this reason, even when the design D is configured, reduction in power generation efficiency as the organic thin-film solar cell 10B can be suppressed.
　さらに、本実施形態に係る有機薄膜太陽電池１０Ｂによれば、第１電極層３１０の支持基板２００側の表面に凹溝（開口部）３２１を設けているので、支持基盤２００と凹溝３２１で囲まれた空間において、支持基板２００側から入射する光を散乱させることができる。これにより、光電変換層４００に入射する光量を増加させ、発電効率を向上させることができる。 Furthermore, according to the organic thin-film solar cell 10B according to the present embodiment, since the groove (opening) 321 is provided on the surface of the first electrode layer 310 on the support substrate 200 side, the support base 200 and the groove 321 In the enclosed space, light incident from the support substrate 200 side can be scattered. Thereby, the light quantity which injects into the photoelectric converting layer 400 can be increased, and electric power generation efficiency can be improved.
　図８７は、本発明の第９実施形態に係る有機薄膜太陽電池１０Ｃの断面図を示し、当該断面図は、図６９のIII-II線に沿う断面図に相当する。同図において、図７０に示した第７実施形態に係る有機薄膜太陽電池１０Ａと同一または同等の部材または部分には、同一の符号を付してある。 FIG. 87 shows a cross-sectional view of an organic thin-film solar cell 10C according to the ninth embodiment of the present invention, and the cross-sectional view corresponds to a cross-sectional view taken along line III-II in FIG. In the figure, the same or similar members or parts as those of the organic thin-film solar cell 10A according to the seventh embodiment shown in FIG.
　この有機薄膜太陽電池１０Ｃは、支持基板２００、第１電極層３１０、光電変換層４００、第２電極層５１０、パッシベーション層６１０、接合層６２０および保護層６３０を有している。 The organic thin film solar cell 10C includes a support substrate 200, a first electrode layer 310, a photoelectric conversion layer 400, a second electrode layer 510, a passivation layer 610, a bonding layer 620, and a protective layer 630.
　支持基板２００は、第１面２０１と、その反対側の第２面２０２とを有し、たとえば、透明なガラスあるいは樹脂からなる。支持基板２００の厚さは、たとえば０．０５ｍｍ～２．０ｍｍであるがこれに限定されない。 The support substrate 200 has a first surface 201 and a second surface 202 on the opposite side, and is made of, for example, transparent glass or resin. The thickness of the support substrate 200 is, for example, 0.05 mm to 2.0 mm, but is not limited thereto.
　第１電極層３１０は、支持基板２００の第２面２０２上に形成されている。第１電極層３１０は、透明であり、本実施形態においてはＩＴＯからなる。この第１電極層３１０は、厚み方向に貫通するスリット３１１によってセル１２ごとに分離されている。第１電極層３１０にはまた、その厚み方向に貫通する貫通部（開口部）３３０が形成されている。貫通部３３０の詳細および技術的意義については後述するが、この第１電極層３１０の一般部３１３の厚みは、たとえば、１００～２００ｎｍである。この第１電極層３１０は、光電変換層４００で生じたキャリアが集約される層である。 The first electrode layer 310 is formed on the second surface 202 of the support substrate 200. The first electrode layer 310 is transparent, and is made of ITO in this embodiment. The first electrode layer 310 is separated for each cell 12 by a slit 311 penetrating in the thickness direction. The first electrode layer 310 also has a penetrating portion (opening) 330 penetrating in the thickness direction. The details and technical significance of the through portion 330 will be described later. The thickness of the general portion 313 of the first electrode layer 310 is, for example, 100 to 200 nm. The first electrode layer 310 is a layer in which carriers generated in the photoelectric conversion layer 400 are collected.
　光電変換層４００は、第１電極層３１０の支持基板２００とは反対側に積層されている。光電変換層４００は、第１電極層３１０に設けたスリット３１１と平面的に一致するスリット４０１により、セル１２ごとに分離されている。これにより、上記スリット３１１に臨む第１電極層３１０の端面と、上記スリット４０１に臨む光電変換層４００の端面は、面一となっている。光電変換層４００は、有機薄膜からなる層であり、受けた光を電力に変換する光電変換機能を発揮する。光電変換層４００の具体的構成については、第７実施形態に係る有機薄膜太陽電池１０について上述したのと同様である。光電変換層４００の厚さは、たとえば１００～２００ｎｍである。光電変換層４００には、第１電極層３１０に形成した凹入部３２０の形態が反映された凹凸４１１が形成されている。なお、光電変換層４００にこのような凹凸４１１が形成されていなくてもよい。 The photoelectric conversion layer 400 is laminated on the opposite side of the first electrode layer 310 from the support substrate 200. The photoelectric conversion layer 400 is separated for each cell 12 by a slit 401 that planarly matches the slit 311 provided in the first electrode layer 310. Thereby, the end surface of the first electrode layer 310 facing the slit 311 and the end surface of the photoelectric conversion layer 400 facing the slit 401 are flush with each other. The photoelectric conversion layer 400 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power. The specific configuration of the photoelectric conversion layer 400 is the same as that described above for the organic thin-film solar cell 10 according to the seventh embodiment. The thickness of the photoelectric conversion layer 400 is, for example, 100 to 200 nm. The photoelectric conversion layer 400 is provided with irregularities 411 reflecting the form of the recessed portions 320 formed in the first electrode layer 310. Note that such unevenness 411 may not be formed in the photoelectric conversion layer 400.
　第２電極層５１０は、各セル１２ごとに、第１電極層３１０と共に支持基板００の第２面２０２と厚み方向において光電変換層４００を挟むようにして光電変換層４００上に積層されている。本実施形態においては、第２電極層５１０は、たとえばＡｌにより形成されるが、材質は限定されず、第７実施形態について上述したのと同様、Ｗ、Ｍｏ、Ｍｎ、Ｍｇ、Ａｕ、Ａｇに代表される導電性金属により形成することができる。したがって、第２電極層２は、本願の定義において透明ではなく、不透明である。またこの場合、第２電極層５１０の支持基板２００と反対側の表面に、Ａｌ2Ｏ3からなる不動態皮膜（図示略）が形成されていてもよい。第２電極層２の厚さは、たとえば１００～２００ｎｍである。第２電極層５１０は、光電変換層によって生じたキャリアが集約される層である。この第２電極層５１０には、光電変換層４００と同様、第１電極層３１０に形成した貫通部３３０の形態が反映された凹凸５１１が形成されている。なお第２電極層５１０にこのような凹凸５１１が形成されていなくてもよい。 The second electrode layer 510 is laminated on the photoelectric conversion layer 400 for each cell 12 so as to sandwich the photoelectric conversion layer 400 in the thickness direction with the second surface 202 of the support substrate 00 together with the first electrode layer 310. In the present embodiment, the second electrode layer 510 is formed of, for example, Al. However, the material is not limited, and W, Mo, Mn, Mg, Au, and Ag are the same as described in the seventh embodiment. It can be formed of a representative conductive metal. Accordingly, the second electrode layer 2 is not transparent but opaque in the definition of the present application. In this case, a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second electrode layer 510 opposite to the support substrate 200. The thickness of the second electrode layer 2 is, for example, 100 to 200 nm. The second electrode layer 510 is a layer in which carriers generated by the photoelectric conversion layer are collected. Similar to the photoelectric conversion layer 400, the second electrode layer 510 is provided with irregularities 511 reflecting the form of the through portion 330 formed in the first electrode layer 310. Such unevenness 511 may not be formed on the second electrode layer 510.
　パッシベーション層６１０は、第２電極層５１０上に積層されており、第２電極層５１０および光電変換層４００を保護するとともに、各セル１２を分離するためのスリット３１１内にも進入し、スリット３１１の底部において支持基板２００に密着している。パッシベーション層６１０は、たとえばＳｉＮ、ＳｉＯ2、またはＳｉＯＮからなる。パッシベーション層４２の厚さは、たとえば０．５μｍ～２．０μｍであり、第１電極層３１０、光電変換層４００および第２電極層５１０の各厚みよりも厚い厚みを有しており、これにより、光電変換層４００に外部から水やパーティクル等が進入することを防止し、有機薄膜太陽電池１０の耐久性を向上させることができる。なお、このパッシベーション層６１０は、第１電極層３１０に設けた凹入部３２０の影響を受けずに表面が平坦となる程度の厚みに形成することが好ましい。 The passivation layer 610 is laminated on the second electrode layer 510, protects the second electrode layer 510 and the photoelectric conversion layer 400, and also enters the slit 311 for separating each cell 12, and the slit 311 Is in close contact with the support substrate 200. The passivation layer 610 is made of, for example, SiN, SiO2, or SiON. The thickness of the passivation layer 42 is, for example, 0.5 μm to 2.0 μm, and is thicker than each of the first electrode layer 310, the photoelectric conversion layer 400, and the second electrode layer 510. In addition, it is possible to prevent water, particles and the like from entering the photoelectric conversion layer 400 from the outside, and to improve the durability of the organic thin film solar cell 10. Note that the passivation layer 610 is preferably formed to a thickness that allows the surface to be flat without being affected by the recessed portion 320 provided in the first electrode layer 310.
　接合層６２０は、パッシベーション層６１０と保護層６３０とを接合する層であり、たとえば樹脂系の接着剤層である。 The bonding layer 620 is a layer that bonds the passivation layer 610 and the protective layer 630, and is, for example, a resin-based adhesive layer.
　保護層６３０は、有機薄膜太陽電池１０Ｃを支持基板２００と反対側から保護するために設けられる。保護層６３０は、好ましくはガラス、もしくはフィルムからなるが、その他有機薄膜太陽電池１０Ｃを保護しうる透明な材質を適宜採用することができる。保護層の厚さは、たとえば３０μｍ～１００μｍである。 The protective layer 630 is provided to protect the organic thin-film solar cell 10C from the side opposite to the support substrate 200. The protective layer 630 is preferably made of glass or a film, but other transparent materials that can protect the organic thin-film solar cell 10C can be appropriately employed. The thickness of the protective layer is, for example, 30 μm to 100 μm.
　上記したように、第１電極層３１０には、厚さ方向に貫通する貫通部（開口部）３３０が形成されている。この貫通部３３０は、支持基板２００の第１面２０１側から視認できる意匠Ｄを表すためのものであり、本実施形態では、図８７に詳示するように、幅ｗがたとえば５～２０μｍで直線的に延びる複数の微細なライン状のスリット３３１をたとえば３０～５０μｍの微細なピッチ間隔ｐで形成することにより、形成している。このようなスリット３３１を形成することにより、支持基板２００の第１面側から見たとき、微細なスリット３３１における光の回折作用により、スリット３３１を設けた領域をホログラムとして視認することができる。したがって、上記のような複数の微細なスリット３３１を設ける領域の平面的な形状を選択することにより、図６９に示すように、上記支持基板２００の第１面側、すなわち、有機薄膜太陽電池１０Ｃの受光面１１に、文字や図柄などの意匠Ｄをホログラムとして表すことが可能となる。なお、本実施形態に係る有機薄膜太陽電池１０Ｃについても、これを裏面から観察した場合、ホログラムとしての意匠が表れることは、第１の実施形態に係る有機薄膜太陽電池１０Ａについて上述したのと同様である。 As described above, the first electrode layer 310 is formed with a penetrating portion (opening) 330 penetrating in the thickness direction. The through portion 330 is for representing the design D that can be viewed from the first surface 201 side of the support substrate 200. In this embodiment, as shown in detail in FIG. 87, the width w is, for example, 5 to 20 μm. A plurality of fine line-shaped slits 331 extending linearly are formed at a fine pitch interval p of, for example, 30 to 50 μm. By forming such a slit 331, when viewed from the first surface side of the support substrate 200, the region where the slit 331 is provided can be visually recognized as a hologram due to the light diffraction action of the fine slit 331. Therefore, by selecting the planar shape of the region where the plurality of fine slits 331 as described above are selected, as shown in FIG. 69, the first surface side of the support substrate 200, that is, the organic thin film solar cell 10C. The design D such as letters and designs can be represented as a hologram on the light receiving surface 11. In addition, also about the organic thin film solar cell 10C which concerns on this embodiment, when this is observed from a back surface, the design as a hologram appears like the organic thin film solar cell 10A which concerns on 1st Embodiment mentioned above. It is.
　次に、有機薄膜太陽電池１０Ｃの製造方法について、図８８～図９４を参照して以下に説明する。 Next, a method for manufacturing the organic thin film solar cell 10C will be described below with reference to FIGS. 88 to 94.
　まず、図８８に示すように支持基板２００を用意し、そして、支持基板２００の第２面２０２にたとえばスパッタ法などの一般的な手法によりＩＴＯ３００を成膜する。次いで、図８９に示すように、該ＩＴＯ３００にパターニングを行うことにより矩形のセル１２ごとに分離された第１電極層３１０を形成する。各第１電極層３１０は、互いに独立しており、隣り合う第１電極層３１０間は、スリット３１１により分離された格好となる。ＩＴＯに対するパターニング手法としては、たとえばウエットエッチングを用いた手法、ドライエッチングを用いた手法、レーザパターニングを用いた手法が適宜採用される。なお、第１電極層３１０は、上記に限られず、印刷法によって、支持基板２００の第２面２０２上に直接的にＩＴＯをパターニングすることで形成するようにしてもよい。 First, as shown in FIG. 88, a support substrate 200 is prepared, and ITO 300 is formed on the second surface 202 of the support substrate 200 by a general method such as sputtering. Next, as shown in FIG. 89, the ITO 300 is patterned to form the first electrode layer 310 separated for each rectangular cell 12. The first electrode layers 310 are independent from each other, and the adjacent first electrode layers 310 are separated by the slits 311. As a patterning technique for ITO, for example, a technique using wet etching, a technique using dry etching, and a technique using laser patterning are appropriately employed. The first electrode layer 310 is not limited to the above, and may be formed by directly patterning ITO on the second surface 202 of the support substrate 200 by a printing method.
　次に、図９０に示すように、第１電極層３１０に、複数の微細なスリット３３１を形成する。具体的には、第１電極層３１０上の意匠Ｄを表すべき領域に複数のスリット３３１を形成する。上記したように、本実施形態では、第１電極層３１０の厚さ１００～２００ｎｍであり、複数のスリット３３１は、幅ｗがたとえば５～２０μｍであり、配列ピッチｐが３０～５０μｍである。このような微細な幅ｗのスリット３３１を微細なピッチ間隔ｐで形成する手法としては、所定出力のレーザスポットを第１電極層３１０上に走査することにより行うことが適当である。なお、ＩＴＯ３００にスリット３１１を設けてセル１２ごとに分離した第１電極層３１０を形成する工程（図８９）と、第１電極層３１０にスリット３３１を形成する工程（図９０）は、順序を逆にしてもよい。 Next, as shown in FIG. 90, a plurality of fine slits 331 are formed in the first electrode layer 310. Specifically, a plurality of slits 331 are formed in a region that should represent the design D on the first electrode layer 310. As described above, in the present embodiment, the thickness of the first electrode layer 310 is 100 to 200 nm, the plurality of slits 331 have a width w of, for example, 5 to 20 μm, and an arrangement pitch p of 30 to 50 μm. As a method of forming the slits 331 having such a fine width w at a fine pitch interval p, it is appropriate to perform scanning by scanning a laser spot having a predetermined output on the first electrode layer 310. The step of forming the slit 311 in the ITO 300 to form the first electrode layer 310 separated for each cell 12 (FIG. 89) and the step of forming the slit 331 in the first electrode layer 310 (FIG. 90) are in order. It may be reversed.
　また、第１電極層３１０にスリット３３１を設ける工程は、ＩＴＯ３００にスリット３１１を設ける工程と同時にドライエッチングによって行うことが可能である。 Further, the step of providing the slit 331 in the first electrode layer 310 can be performed by dry etching simultaneously with the step of providing the slit 311 in the ITO 300.
　次に、図９１に示すように、光電変換層４００を形成する。光電変換層４００の形成は、たとえば、スピンコート塗布により支持基板２００上および第１電極層３１０上に有機膜を成膜した後に、酸素プラズマエッチング、あるいはレーザパターニングを用いることによって、矩形の第１電極層３１０の平面形状と一致した平面形状に仕上げることにより行う。なお、光電変換層４００は、上記に限定されず、スリットコート法、キャピラリーコート法、グラビア印刷やスクリーン印刷などの印刷法によって、支持基板２００上および第１電極層３１０上に直接的に有機膜をパターニングすることで形成するようにしてもよい。 Next, as shown in FIG. 91, a photoelectric conversion layer 400 is formed. The photoelectric conversion layer 400 is formed by, for example, forming an organic film on the support substrate 200 and the first electrode layer 310 by spin coating and then using oxygen plasma etching or laser patterning to form a rectangular first film. This is done by finishing to a planar shape that matches the planar shape of the electrode layer 310. The photoelectric conversion layer 400 is not limited to the above, and an organic film is directly formed on the support substrate 200 and the first electrode layer 310 by a slit coating method, a capillary coating method, a printing method such as gravure printing or screen printing. It may be formed by patterning.
　次に、図９２に示すように、第２電極層５１０を形成する。第２電極層５１０の形成は、たとえば上述した金属を真空加熱蒸着法によって支持基板２００、第１電極層３１０および光電変換層４００上に金属膜を成膜した後、この金属膜にたとえばマスク層を用いたエッチングを行うことによりパターニングを施すことにより行う。このパターニングにより、光電変換層４００上に第２電極層５１０を形成する。この後は、図９３に示すように、たとえばプラズマＣＶＤ法によってＳｉＮ、ＳｉＯ2、またはＳｉＯＮを支持基板２００、第１電極層３１０、光電変換層４００および第２電極層５１０上に成膜することにより、パッシベーション層６１０を形成する。そして、パッシベーション層６１０に接合層６２０を介して保護層６２０を接合する（図９４）。以上の工程を経ることにより、図９６に示した有機薄膜太陽電池１０Ｃが得られる。 Next, as shown in FIG. 92, a second electrode layer 510 is formed. The second electrode layer 510 is formed by, for example, forming a metal film on the support substrate 200, the first electrode layer 310, and the photoelectric conversion layer 400 by using the above-described metal by vacuum heating vapor deposition, and then, for example, forming a mask layer on the metal film. This is performed by performing patterning by performing etching using. By this patterning, the second electrode layer 510 is formed on the photoelectric conversion layer 400. Thereafter, as shown in FIG. 93, SiN, SiO2, or SiON is formed on the support substrate 200, the first electrode layer 310, the photoelectric conversion layer 400, and the second electrode layer 510, for example, by plasma CVD. Then, a passivation layer 610 is formed. Then, the protective layer 620 is bonded to the passivation layer 610 via the bonding layer 620 (FIG. 94). Through the above steps, the organic thin film solar cell 10C shown in FIG. 96 is obtained.
　次に、有機薄膜太陽電池１０Ｃの作用について説明する。 Next, the operation of the organic thin film solar cell 10C will be described.
　本実施形態に係る有機薄膜太陽電池１０Ｃによれば、支持基板２００と光電変換層４００との間の第１電極層３１０に貫通部（開口部）３３０を設けて意匠Ｄを構成し、この意匠Ｄを支持基板２００側から視認できる構成としたので、有機薄膜太陽電池１０Ｃに追加の部材を積層させることや外側に印刷を施すことなどをすることなく、当該有機薄膜太陽電池１０の受光面１１に意匠Ｄを表すことができる。また、このようにして表される意匠Ｄが外物との接触や摩擦によって品位低下を招いたり、消失したりすることもなく、意匠Ｄ表示の品位を保つことができる。 According to the organic thin-film solar cell 10 </ b> C according to the present embodiment, the design D is configured by providing the first electrode layer 310 between the support substrate 200 and the photoelectric conversion layer 400 with the through portion (opening) 330. Since D is configured to be visible from the support substrate 200 side, the light-receiving surface 11 of the organic thin-film solar cell 10 can be obtained without laminating an additional member on the organic thin-film solar cell 10C or printing the outside. Design D can be represented by In addition, the design D displayed in this way can maintain the quality of the design D display without causing deterioration or disappearance of the design D due to contact or friction with an external object.
　また、本実施形態に係る有機薄膜太陽電池１０Ｃによれば、第１電極層３１０に対する加工により、受光面１１から視認できるようにホログラムとして意匠Ｄを表すことができるので、当該有機薄膜太陽電池１０Ｃまたはこれを備える電子機器１００の模造品対策に役立つ。 Further, according to the organic thin film solar cell 10C according to the present embodiment, the design D can be represented as a hologram so that the design D can be viewed from the light receiving surface 11 by processing the first electrode layer 310, and therefore the organic thin film solar cell 10C. Or it is useful for counterfeit measures of the electronic device 100 provided with this.
　上記した各実施形態では、第１電極層３１０に設ける薄肉部３１２またはスリット３３１として、支持基板２００の第１面２０１側から見た場合にホログラムを生じさせるように構成したが、本発明は、薄肉部３１２またはスリット３３１は、それ自体の平面形状は限定されないし、あるいは、これら薄肉部３１２またはスリット３３１の集合としてホログラムを生じさせるものに限定されない。 In each of the above-described embodiments, the thin portion 312 or the slit 331 provided in the first electrode layer 310 is configured to generate a hologram when viewed from the first surface 201 side of the support substrate 200. The thin-walled portion 312 or the slit 331 is not limited in its planar shape, or is not limited to one that generates a hologram as a set of the thin-walled portion 312 or the slit 331.
　図９５は、本発明の第１０実施形態に係る有機薄膜太陽電池１０Ｄの平面図を示し、図９６は図９５のＸＣＶＩ－ＸＣＶＩ線に沿う拡大断面図である。同図において、同図において、図７０
に示した第７実施形態に係る有機薄膜太陽電池１０Ａと同一または同等の部材または部分には、同一の符号を付してある。 95 is a plan view of an organic thin-film solar cell 10D according to the tenth embodiment of the present invention, and FIG. 96 is an enlarged cross-sectional view taken along the line XCVI-XCVI of FIG. In the same figure, in FIG.
The same or equivalent members or portions as those of the organic thin-film solar cell 10A according to the seventh embodiment shown in FIG.
　この有機薄膜太陽電池１０Ｄでは、第１電極層３１０の支持基板２００と反対側に、表すべき意匠Ｄの輪郭と対応した凹部（開口部）３４０を設けることにより、薄肉部３１２を形成している。たとえば、光電変換層４００の着色を弱め、第１電極層３１０に着色を施すことにより、薄肉部３１２の平面的形状が色のトーン差として支持基板２００の第１面から視認することができ、これにより所望の意匠Ｄを表すことができる。 In this organic thin-film solar cell 10D, a thin-walled portion 312 is formed by providing a recess (opening) 340 corresponding to the contour of the design D to be represented on the opposite side of the first electrode layer 310 from the support substrate 200. . For example, by weakening the coloring of the photoelectric conversion layer 400 and coloring the first electrode layer 310, the planar shape of the thin portion 312 can be visually recognized from the first surface of the support substrate 200 as a color tone difference. Thereby, the desired design D can be represented.
　次に、有機薄膜太陽電池１０Ｄの製造方法について、図９７～図１０３を参照して以下に説明する。 Next, a method for manufacturing the organic thin film solar cell 10D will be described below with reference to FIGS.
　まず、図９７に示すように支持基板２００を用意し、そして、支持基板２００の第２面２０２にたとえばスパッタ法などの一般的な手法によりＩＴＯ３００を成膜する。次いで、図９８に示すように、該ＩＴＯにパターニングを行うことにより矩形のセル１２ごとに分離された第１電極層３１０を形成する。各第１電極層３１０は、互いに独立しており、隣り合う第１電極層３１０間は、スリット３１１により分離された格好となる。ＩＴＯに対するパターニング手法としては、たとえばウエットエッチングを用いた手法、酸素プラズマエッチングを用いた手法、レーザパターニングを用いた手法が適宜採用される。なお、第１電極層３１０は、上記に限られず、印刷法によって、支持基板２００の第２面２０２上に直接的にＩＴＯ３００をパターニングすることで形成するようにしてもよい。 First, as shown in FIG. 97, a support substrate 200 is prepared, and an ITO 300 is formed on the second surface 202 of the support substrate 200 by a general method such as sputtering. Next, as shown in FIG. 98, the first electrode layer 310 separated for each rectangular cell 12 is formed by patterning the ITO. The first electrode layers 310 are independent from each other, and the adjacent first electrode layers 310 are separated by the slits 311. As a patterning technique for ITO, for example, a technique using wet etching, a technique using oxygen plasma etching, and a technique using laser patterning are appropriately employed. The first electrode layer 310 is not limited to the above, and may be formed by directly patterning the ITO 300 on the second surface 202 of the support substrate 200 by a printing method.
　次に、図９９に示すように、第１電極層３１０に、表すべき意匠Ｄの輪郭と対応した凹部（開口部）３４０を設けることにより、薄肉部３１２を形成する。このような薄肉部３１２を形成する手法としては、所定出力のレーザスポットを第１電極層３１０上に走査することにより行うことが適当である。 Next, as shown in FIG. 99, the thin portion 312 is formed by providing the first electrode layer 310 with a recess (opening) 340 corresponding to the contour of the design D to be represented. As a method for forming such a thin portion 312, it is appropriate to perform scanning by scanning a laser spot having a predetermined output on the first electrode layer 310.
　次に、図１００に示すように、光電変換層４００を形成する。光電変換層４００の形成は、たとえば、スピンコート塗布により支持基板２００上および第１電極層３１０上に有機膜を成膜した後に、ドライエッチング、あるいはレーザパターニングを用いることによって、矩形の第１電極層３１０の平面形状と一致した平面形状に仕上げることにより行う。なお、光電変換層４００は、上記に限定されず、スリットコート法、キャピラリーコート法、グラビア印刷やスクリーン印刷などの印刷法によって、支持基板２００上および第１電極層３１０上に直接的に有機膜をパターニングすることで形成するようにしてもよい。 Next, as shown in FIG. 100, a photoelectric conversion layer 400 is formed. For example, the photoelectric conversion layer 400 is formed by forming an organic film on the support substrate 200 and the first electrode layer 310 by spin coating and then using dry etching or laser patterning to form a rectangular first electrode. This is done by finishing to a planar shape that matches the planar shape of the layer 310. The photoelectric conversion layer 400 is not limited to the above, and an organic film is directly formed on the support substrate 200 and the first electrode layer 310 by a slit coating method, a capillary coating method, a printing method such as gravure printing or screen printing. It may be formed by patterning.
　次に、図１０１に示すように、第２電極層５１０を形成する。第２電極層５１０の形成は、たとえば上述した金属を真空加熱蒸着法によって支持基板２００、第１電極層３１０および光電変換層４００上に金属膜を成膜する。次に、この金属膜にたとえばマスク層を用いたエッチングを行うことによりパターニングを施す。このパターニングにより、光電変換層４００上に第２電極層５１０を形成する。この後は、図１０１に示すように、たとえばプラズマＣＶＤ法によってＳｉＮ、ＳｉＯ2、またはＳｉＯＮを支持基板２００、第１電極層３１０、光電変換層４００および第２電極層５１０上に成膜することにより、パッシベーション層６１０を形成する。そして、パッシベーション層６１０に接合層６２０（図１０３）を介して保護層４４を接合する。以上の工程を経ることにより、図９６に示した有機薄膜太陽電池１０Ｄが得られる。 Next, as shown in FIG. 101, a second electrode layer 510 is formed. The second electrode layer 510 is formed by forming a metal film on the support substrate 200, the first electrode layer 310, and the photoelectric conversion layer 400 using, for example, the above-described metal by vacuum heating evaporation. Next, patterning is performed on the metal film by, for example, etching using a mask layer. By this patterning, the second electrode layer 510 is formed on the photoelectric conversion layer 400. Thereafter, as shown in FIG. 101, SiN, SiO2, or SiON is formed on the support substrate 200, the first electrode layer 310, the photoelectric conversion layer 400, and the second electrode layer 510 by, for example, plasma CVD. Then, a passivation layer 610 is formed. Then, the protective layer 44 is bonded to the passivation layer 610 via the bonding layer 620 (FIG. 103). Through the above steps, the organic thin film solar cell 10D shown in FIG. 96 is obtained.
　図１０４は、本発明の第１１、第１２実施形態に係る有機薄膜太陽電池１０Ｅ、１０Ｆの平面図を示し、図１０５は第１１実施形態に係る有機薄膜太陽電池１０Ｅの構造を示す、図１０４のＣＶ－ＣＶ線に沿う拡大断面図である。同図において、図７０に示した第７実施形態に係る有機薄膜太陽電池１０Ａと同一または同等の部材または部分には、同一の符号を付してある。 104 shows a plan view of organic thin-film solar cells 10E and 10F according to the eleventh and twelfth embodiments of the present invention, and FIG. 105 shows the structure of the organic thin-film solar cell 10E according to the eleventh embodiment. It is an expanded sectional view in alignment with the CV-CV line. In the figure, the same or similar members or parts as those of the organic thin-film solar cell 10A according to the seventh embodiment shown in FIG.
　この有機薄膜太陽電池１０Ｅでは、第１電極層３１０の支持基板２００と反対側に、多数のドットとしての凹部（開口部）３４０を設けることにより多数の薄肉部３１２を設け、この多数のドットの集合が表すべき意匠Ｄの平面的形状と対応するようにしている。このような構成によっても、有機薄膜太陽電池１０Ｅの受光面１１から視認できる意匠Ｄを表すことができる。この場合、ドットを形成する凹部３４０を着色材で埋めることにより、より明確に意匠Ｄを表すことができる。 In this organic thin film solar cell 10E, a large number of thin portions 312 are provided by providing recesses (openings) 340 as a large number of dots on the opposite side of the first electrode layer 310 from the support substrate 200, and The set corresponds to the planar shape of the design D to be represented. Even with such a configuration, the design D visible from the light receiving surface 11 of the organic thin film solar cell 10E can be represented. In this case, the design D can be expressed more clearly by filling the concave portions 340 for forming dots with a coloring material.
　図１０６は、第１２実施形態に係る有機薄膜太陽電池１０Ｆを示す、図１０４のＣＶ－ＣＶ線に沿う拡大断面図に相当する図である。この有機薄膜太陽電池１０Ｆでは、第１電極層３１０に、多数のドットとしての貫通部（開口部）３３０を設け、この多数のドットの集合が表すべき意匠Ｄの平面的形状と対応するようにしている。このような構成によっても、有機薄膜太陽電池１０Ｆの受光面１１から視認できる意匠Ｄを表すことができる。この場合、ドットを形成する貫通部を着色材で埋めることにより、より明確に意匠Ｄを表すことができる。 FIG. 106 is a view corresponding to an enlarged cross-sectional view taken along line CV-CV of FIG. 104, showing an organic thin-film solar cell 10F according to the twelfth embodiment. In this organic thin film solar cell 10F, through portions (openings) 330 as a large number of dots are provided in the first electrode layer 310 so that the set of the large number of dots corresponds to the planar shape of the design D to be represented. ing. Even with such a configuration, the design D visible from the light receiving surface 11 of the organic thin-film solar cell 10F can be represented. In this case, the design D can be expressed more clearly by filling the penetrating portions forming the dots with a coloring material.
　図１０７ないし図１０９は、電子機器１００としての時計に、本発明に係る有機薄膜太陽電池１０Ｇ，１０Ｈを組み込み、その受光面に文字盤もしくは図柄としての意匠Ｄを表すようにした例を示す。図１０７は、電子機器１００としての時計の平面図、図１０８は図１０７のＣＶＩＩＩ－ＣＶＩＩＩ線に沿う拡大断面図、図１０９は図１０７のＣＩＸ－ＣＩＸ線に沿う拡大断面図である。これらの図において、図７０に示した第７実施形態に係る有機薄膜太陽電池１０Ａと同一または同等の部材または部分には、同一の符号を付してある。なお、図１０８および図１０９は、受光面１１が上方になるように表している。 107 to 109 show examples in which the organic thin film solar cells 10G and 10H according to the present invention are incorporated in a timepiece as the electronic device 100, and the design D as a dial or a pattern is represented on the light receiving surface. 107 is a plan view of a timepiece as the electronic apparatus 100, FIG. 108 is an enlarged sectional view taken along line CVIII-CVIII in FIG. 107, and FIG. 109 is an enlarged sectional view taken along line CIX-CIX in FIG. In these drawings, the same or equivalent members or parts as those of the organic thin film solar cell 10A according to the seventh embodiment shown in FIG. 108 and 109 show the light receiving surface 11 facing upward.
　有機薄膜太陽電池１０Ｇでは、適宜の形状に区切られたセル１２に、時刻を表すローマ数字を意匠Ｄとして表している。有機薄膜太陽電池１０Ｇの構造としては、たとえば，図９６に示した第１０実施形態に係る有機薄膜太陽電池１０Ｄのものを採用すればよいが、その他の実施形態に係る有機薄膜太陽電池１０Ａ～１０Ｃ，１０Ｅ，１０Ｆのものを採用することもできる。 In the organic thin film solar cell 10G, Roman numerals representing the time are represented as a design D in the cells 12 partitioned into an appropriate shape. As the structure of the organic thin film solar cell 10G, for example, the organic thin film solar cell 10D according to the tenth embodiment shown in FIG. 96 may be adopted, but the organic thin film solar cells 10A to 10C according to other embodiments may be adopted. , 10E, 10F may be employed.
　有機薄膜太陽電池１０Ｈでは、適宜の形状に区切られたセル１２に、ハートの図柄の所定幅の輪郭を意匠Ｄとして表している。有機薄膜太陽電池１０Ｈの構造としても、たとえば、図９６に示した第１０実施形態に係る有機薄膜太陽電池１０Ｄのものを採用すればよいが、その他の実施形態に係る有機薄膜太陽電池１０Ａ～１０Ｃ，１０Ｅ，１０Ｆのものを採用することもできる。また、時計を含む電子機器において、本発明にかかる有機薄膜太陽電池１０により表現可能な図柄がハート型に限られないことはいうまでもない。 In the organic thin-film solar cell 10H, the outline of a predetermined width of the symbol of the heart is represented as the design D in the cell 12 partitioned into an appropriate shape. As the structure of the organic thin film solar cell 10H, for example, the organic thin film solar cell 10D according to the tenth embodiment shown in FIG. 96 may be adopted, but the organic thin film solar cells 10A to 10C according to other embodiments may be adopted. , 10E, 10F may be employed. Needless to say, in an electronic device including a timepiece, the symbol that can be expressed by the organic thin film solar cell 10 according to the present invention is not limited to the heart shape.
　図１１０～図１１２は、電子機器１００としてのスマートフォンの表面に有機薄膜太陽電池１０Ｉを配置し、これに意匠Ｄを表すようにした例を示す。図１０７は、電子機器１００としてのスマートフォンの平面図を、図１０８は有機薄膜太陽電池１０Ｉの拡大平面図を、図１１２は、図１１１のＣＸＩＩ－ＣＸＩＩ線に沿う拡大断面図である。これらの図において、図７０に示した第７実施形態に係る有機薄膜太陽電池１０Ａと同一または同等の部材または部分には、同一の符号を付してある。なお、図１１２は、受光面１１が上になるように表している。 110 to 112 show an example in which the organic thin film solar cell 10I is arranged on the surface of a smartphone as the electronic device 100 and the design D is represented on the organic thin film solar cell 10I. 107 is a plan view of a smartphone as the electronic device 100, FIG. 108 is an enlarged plan view of the organic thin-film solar cell 10I, and FIG. 112 is an enlarged sectional view taken along line CXII-CXII in FIG. In these drawings, the same or equivalent members or parts as those of the organic thin film solar cell 10A according to the seventh embodiment shown in FIG. FIG. 112 shows the light receiving surface 11 facing upward.
　有機薄膜太陽電池１０Ｉでは、スマートフォンの表面のうち、表示部１２０や操作ボタン１３０を除く全域に形成した有機薄膜太陽電池のうち、適宜の形状に区切られたセル１２に、文字からなる意匠Ｄをホログラムとして表すようにしている。有機薄膜太陽電池１０Ｉの構造としては、図７０に示した第７実施形態に係る有機薄膜太陽電池１０Ａのものを採用しているが、その他の実施形態に係る有機薄膜太陽電池１０Ｂ～１０Ｆのものを採用することもできる。 In the organic thin film solar cell 10I, among the organic thin film solar cells formed on the entire surface of the smartphone, excluding the display unit 120 and the operation buttons 130, the design D made of letters is applied to the cells 12 partitioned into an appropriate shape. It is expressed as a hologram. As the structure of the organic thin film solar cell 10I, the organic thin film solar cell 10A according to the seventh embodiment shown in FIG. 70 is adopted, but the organic thin film solar cells 10B to 10F according to other embodiments are used. Can also be adopted.
　本発明に係る有機薄膜太陽電池は、上記した各実施形態および変形例に記載の材料や数値等に限定されるものではなく、発明の趣旨を逸脱しない範囲内において種々変更可能であることはいうまでもない。 The organic thin-film solar cell according to the present invention is not limited to the materials and numerical values described in the above-described embodiments and modifications, and various modifications can be made without departing from the spirit of the invention. Not too long.
　以下に、本発明の技術的特徴について付記する。 The technical features of the present invention will be described below.
〔付記１Ｃ〕
　第１面およびこれと反対側の第２面を有する透明な支持基板と、
　前記支持基板の第２面側に配置された透明な第１電極層と、
　前記第１電極層の前記支持基板とは反対側に積層された、有機薄膜からなる光電変換層と、
　前記光電変換層の前記支持基板とは反対側に積層された第２電極層と、を含む有機薄膜太陽電池であって、
　前記第１電極層は、表面に開口部を含んでおり、この開口部が前記支持基板の第１面側に意匠を表す、有機薄膜太陽電池。
〔付記２Ｃ〕
　前記開口部は、その平面視の外縁が、表すべき意匠の外縁の一部を構成している、付記１Ｃに記載の有機薄膜太陽電池。
〔付記３Ｃ〕
　前記開口部は、平面視が所定形状のドットの集合として形成されている、付記１Ｃに記載の有機薄膜太陽電池。
〔付記４Ｃ〕
　前記ドッドの集合が、表すべき意匠の一部を構成している、付記３Ｃに記載の有機薄膜太陽電池。
〔付記５Ｃ〕
　前記開口部は、所定幅で所定方向に延びる複数のラインが所定間隔で配列されたものとして形成されている、付記１Ｃに記載の有機薄膜太陽電池。
〔付記６Ｃ〕
　前記複数のラインの集合が、表すべき意匠の一部を構成している、付記５Ｃに記載の有機薄膜太陽電池。
〔付記７Ｃ〕
　前記開口部は、支持基板の第１面の外部から見たとき、ホログラムを発生する、付記５Ｃまたは６Ｃに記載の有機薄膜太陽電池。
〔付記８Ｃ〕
　前記開口部としての複数のラインは、幅が５～２０μｍであり、３０～５０μｍ間隔で配列されている、付記７Ｃに記載の有機薄膜太陽電池。
〔付記９Ｃ〕
　前記第１電極層の前記開口部以外の部分の厚みは、１００～２００ｎｍである、付記１Ｃないし８Ｃのいずれかに記載の有機薄膜太陽電池。
〔付記１０Ｃ〕
　前記開口部は、前記第１電極層を前記支持基板とは反対側の表面から所定深さ凹入させて形成されている、付記９Ｃに記載の有機薄膜太陽電池。
〔付記１１Ｃ〕
　前記開口部は、前記第１電極層を前記支持基板側の表面から所定深さ凹入させて形成されている、付記９Ｃに記載の有機薄膜太陽電池。
〔付記１２Ｃ〕
　前記開口部の深さは、厚み５０～１００ｎｍの薄肉部が残る深さである、付記１０Ｃまたは１１Ｃに記載の有機薄膜太陽電池。
〔付記１３Ｃ〕
　前記開口部は、前記第１電極層を厚み方向に貫通させて形成されている、付記１Ｃないし７Ｃのいずれかに記載の有機薄膜太陽電池。
〔付記１４Ｃ〕
　前記第２電極層を前記光電変換層とは反対側において覆うパッシベーション層を備える、付記９Ｃないし１３Ｃのいずれかに記載の有機薄膜太陽電池。
〔付記１５Ｃ〕
　前記パッシベーション層を前記第２電極層とは反対側において覆う保護層を備える、付記１４Ｃに記載の有機薄膜太陽電池。
〔付記１６Ｃ〕
　前記パッシベーション層と前記保護層とを接合する接合層を備える、付記１５Ｃに記載の有機薄膜太陽電池。
〔付記１７Ｃ〕
　前記第１電極層は、ＩＴＯからなる、付記９Ｃないし１６Ｃのいずれかに記載の有機薄膜太陽電池。
〔付記１８Ｃ〕
　前記光電変換層の厚みは、１００～２００ｎｍである、付記９Ｃないし１７Ｃのいずれかに記載の有機薄膜太陽電池。
〔付記１９Ｃ〕
　前記第２電極層の厚みは、１００～２００ｎｍである、付記９Ｃないし１８Ｃのいずれかに記載の有機薄膜太陽電池。
〔付記２０Ｃ〕
　前記第２電極層は、金属からなる、付記１９Ｃに記載の有機薄膜太陽電池。
〔付記２１Ｃ〕
　前記第２電極層は、Ａｌからなる、付記２０Ｃに記載の有機薄膜太陽電池。
〔付記２２Ｃ〕
　前記第１電極層、前記光電変換層、前記第２電極層および前記パッシペーション層の合計厚みは、１．０～２．０μｍである、付記９Ｃないし２１Ｃのいずれかに記載の有機薄膜太陽電池。
〔付記２３Ｃ〕
　第１面およびこれと反対側の第２面を有する透明な支持基板の前記第２面側に所定の厚みを有し、かつ表面に開口部を備えた透明な第１電極層を形成するステップ、
　前記第１電極層上光電変換層を形成するステップ、および、
　前記光電変換層上第２電極層を形成するステップ、
を含む、有機薄膜太陽電池の製造方法。
〔付記２４Ｃ〕
　前記第１電極層を形成するステップは、前記第１電極層をその厚み方向に除去して前記開口部を形成するステップを含む、付記２３Ｃに記載の有機薄膜太陽電池の製造方法。
〔付記２５Ｃ〕
　前記開口部を形成するステップは、前記第１電極層をその厚み方向に所定深さ除去して行う、付記２４Ｃに記載の有機薄膜太陽電池の製造方法。
〔付記２６Ｃ〕
　前記開口部を形成するステップは、厚み１００～２００ｎｍの前記第１電極層を厚み５０～１００ｎｍの薄肉部が残るようにして行う、付記２５Ｃに記載の有機薄膜太陽電池の製造方法。
〔付記２７Ｃ〕
　前記開口部を形成するステップは、前記支持基板とは反対側から前記第１電極層を除去して行う、付記２５Ｃまたは２６Ｃに記載の有機薄膜太陽電池の製造方法。
〔付記２８Ｃ〕
　前記開口部を形成するステップは、前記開口部を形成する以前の第１電極層を形成した後に行う、付記２７Ｃに記載の有機薄膜太陽電池の製造方法。
〔付記２９Ｃ〕
　前記開口部を形成するステップは、前記支持基板の第１面側から前記第１電極層を除去して行う、付記２６Ｃに記載の有機薄膜太陽電池の製造方法。
〔付記３０Ｃ〕
　前記開口部を形成するステップは、前記開口部を形成する以前の第１電極層に対し、前記第２電極層を形成するステップよりも後に行う、付記２９Ｃに記載の有機薄膜太陽電池の製造方法。
〔付記３１Ｃ〕
　前記開口部を形成するステップは、前記第１電極層をその厚み方向に貫通する貫通部を形成することにより行う、付記２４Ｃに記載の有機薄膜太陽電池の製造方法。
〔付記３２Ｃ〕
　前記開口部を形成するステップは、５～２０μｍの幅で所定方向に延びる複数のラインが３０～５０μｍ間隔で配列されたものとして形成する、付記２４Ｃないし３１Ｃのいずれかに記載の有機薄膜太陽電池の製造方法。
〔付記３３Ｃ〕
　前記開口部を形成するステップは、レーザを照射することにより行う、付記２４Ｃないし３１Ｃのいずれかに記載の有機薄膜太陽電池の製造方法。
〔付記３４Ｃ〕
　筐体を有し、当該筐体の表面に前記支持基板の前記第１面が臨むようにして付記１Ｃないし２２Ｃのいずれかに記載の有機薄膜太陽電池を備える、電子機器。 [Appendix 1C]
A transparent support substrate having a first surface and a second surface opposite to the first surface;
A transparent first electrode layer disposed on the second surface side of the support substrate;
A photoelectric conversion layer made of an organic thin film, laminated on the opposite side of the first electrode layer from the support substrate;
A second electrode layer laminated on the opposite side of the photoelectric conversion layer from the support substrate, and an organic thin film solar cell comprising:
The said 1st electrode layer is an organic thin-film solar cell in which the opening part contains the opening part and this opening part represents a design in the 1st surface side of the said support substrate.
[Appendix 2C]
The said opening part is an organic thin-film solar cell of Additional remark 1C in which the outer edge of the planar view comprises a part of outer edge of the design which should represent.
[Appendix 3C]
The organic thin film solar cell according to appendix 1C, wherein the opening is formed as a set of dots having a predetermined shape in plan view.
[Appendix 4C]
The organic thin-film solar cell according to attachment 3C, wherein the set of dodds constitutes a part of the design to be represented.
[Appendix 5C]
The organic thin-film solar cell according to appendix 1C, wherein the opening is formed by arranging a plurality of lines having a predetermined width and extending in a predetermined direction at predetermined intervals.
[Appendix 6C]
The organic thin-film solar cell according to appendix 5C, wherein the set of the plurality of lines constitutes a part of the design to be represented.
[Appendix 7C]
The organic thin-film solar battery according to appendix 5C or 6C, wherein the opening generates a hologram when viewed from the outside of the first surface of the support substrate.
[Appendix 8C]
The organic thin-film solar cell according to appendix 7C, wherein the plurality of lines as the openings have a width of 5 to 20 μm and are arranged at intervals of 30 to 50 μm.
[Appendix 9C]
The organic thin-film solar cell according to any one of appendices 1C to 8C, wherein the thickness of the first electrode layer other than the opening is 100 to 200 nm.
[Appendix 10C]
The organic thin-film solar cell according to appendix 9C, wherein the opening is formed by recessing the first electrode layer by a predetermined depth from the surface opposite to the support substrate.
[Appendix 11C]
The organic thin-film solar cell according to appendix 9C, wherein the opening is formed by recessing the first electrode layer by a predetermined depth from the surface on the support substrate side.
[Appendix 12C]
The organic thin-film solar cell according to appendix 10C or 11C, wherein the depth of the opening is a depth at which a thin portion having a thickness of 50 to 100 nm remains.
[Appendix 13C]
The organic thin film solar cell according to any one of appendices 1C to 7C, wherein the opening is formed by penetrating the first electrode layer in a thickness direction.
[Appendix 14C]
The organic thin-film solar cell according to any one of appendices 9C to 13C, comprising a passivation layer that covers the second electrode layer on the side opposite to the photoelectric conversion layer.
[Appendix 15C]
The organic thin-film solar cell according to appendix 14C, comprising a protective layer that covers the passivation layer on the side opposite to the second electrode layer.
[Appendix 16C]
The organic thin-film solar cell according to appendix 15C, comprising a joining layer that joins the passivation layer and the protective layer.
[Appendix 17C]
The organic thin film solar cell according to any one of appendices 9C to 16C, wherein the first electrode layer is made of ITO.
[Appendix 18C]
The organic thin-film solar cell according to any one of appendices 9C to 17C, wherein the photoelectric conversion layer has a thickness of 100 to 200 nm.
[Appendix 19C]
The organic thin-film solar cell according to any one of appendices 9C to 18C, wherein the second electrode layer has a thickness of 100 to 200 nm.
[Appendix 20C]
The organic thin film solar cell according to appendix 19C, wherein the second electrode layer is made of metal.
[Appendix 21C]
The organic thin film solar cell according to appendix 20C, wherein the second electrode layer is made of Al.
[Appendix 22C]
The organic thin-film solar battery according to any one of appendices 9C to 21C, wherein a total thickness of the first electrode layer, the photoelectric conversion layer, the second electrode layer, and the passivation layer is 1.0 to 2.0 μm. .
[Appendix 23C]
Forming a transparent first electrode layer having a predetermined thickness on the second surface side of the transparent support substrate having the first surface and the second surface opposite to the first surface, and having an opening on the surface; ,
Forming a photoelectric conversion layer on the first electrode layer; and
Forming a second electrode layer on the photoelectric conversion layer;
A method for producing an organic thin film solar cell, comprising:
[Appendix 24C]
The step of forming the first electrode layer includes the step of removing the first electrode layer in the thickness direction to form the opening, and the method for manufacturing an organic thin-film solar cell according to attachment 23C.
[Appendix 25C]
The step of forming the opening is the method for manufacturing an organic thin-film solar cell according to appendix 24C, wherein the first electrode layer is removed by a predetermined depth in the thickness direction.
[Appendix 26C]
The method of manufacturing an organic thin-film solar cell according to appendix 25C, wherein the step of forming the opening is performed such that the first electrode layer having a thickness of 100 to 200 nm remains in a thin portion having a thickness of 50 to 100 nm.
[Appendix 27C]
The method of manufacturing an organic thin-film solar cell according to appendix 25C or 26C, wherein the step of forming the opening is performed by removing the first electrode layer from the side opposite to the support substrate.
[Appendix 28C]
The step of forming the opening is the method for manufacturing an organic thin-film solar cell according to appendix 27C, which is performed after forming the first electrode layer before forming the opening.
[Appendix 29C]
The step of forming the opening is performed by removing the first electrode layer from the first surface side of the support substrate, and the method for manufacturing an organic thin-film solar cell according to attachment 26C.
[Appendix 30C]
The method of manufacturing an organic thin-film solar cell according to appendix 29C, wherein the step of forming the opening is performed after the step of forming the second electrode layer with respect to the first electrode layer before the opening is formed. .
[Appendix 31C]
The step of forming the opening is a method for manufacturing an organic thin-film solar cell according to appendix 24C, wherein the step of forming the opening is performed by forming a through portion that penetrates the first electrode layer in the thickness direction.
[Appendix 32C]
The organic thin-film solar cell according to any one of appendices 24C to 31C, wherein the step of forming the opening is formed as a plurality of lines extending in a predetermined direction with a width of 5 to 20 μm arranged at intervals of 30 to 50 μm. Manufacturing method.
[Appendix 33C]
The method of manufacturing an organic thin-film solar cell according to any one of appendices 24C to 31C, wherein the step of forming the opening is performed by laser irradiation.
[Appendix 34C]
An electronic apparatus comprising a housing and comprising the organic thin-film solar cell according to any one of appendices 1C to 22C such that the first surface of the support substrate faces the surface of the housing.
［第１３－第１５実施形態］
　第１３ないし第１５実施形態および図１１３～図１４５における符号は、これらの実施形態および図において有効であり、他の実施形態および図における符号とは独立している。ただし、第１３ないし第１５実施形態の具体的構成と他の実施形態の具体的構成とは、相互に適宜組合せ可能である。 [Thirteenth to fifteenth embodiments]
The reference numerals in the thirteenth to fifteenth embodiments and FIGS. 113 to 145 are effective in these embodiments and drawings, and are independent of the reference numerals in the other embodiments and drawings. However, the specific configurations of the thirteenth to fifteenth embodiments and the specific configurations of the other embodiments can be appropriately combined with each other.
　本発明において、「透明」とは、透過率が約５０％以上であるものと定義する。また「透明」とは、可視光線に対して、無色透明という意味でも使用する。可視光線は波長約３６０ｎｍ～８３０ｎｍ程度、エネルギー約３．４５ｅＶ～１．４９ｅＶ程度に相当し、この領域で透過率が５０％以上あれば透明である。 In the present invention, “transparent” is defined as having a transmittance of about 50% or more. “Transparent” is also used to mean colorless and transparent to visible light. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.
　図１１３～図１１７は、本発明の第１３実施形態に基づく電子機器および本発明の第１３および第１４実施形態に基づく有機薄膜太陽電池モジュールを示している。本実施形態の電子機器Ｂ１３は、有機薄膜太陽電池モジュールＡ１３、有機薄膜太陽電池モジュールＡ１４、ケース６１、制御部７０１、表示部７０２、入力部７０３、マイク７０４、スピーカ７０５、無線通信部７０６およびバッテリ７０７を備えており、携帯型電話端末として構成されている。 113 to 117 show an electronic device based on the thirteenth embodiment of the present invention and an organic thin-film solar cell module based on the thirteenth and fourteenth embodiments of the present invention. The electronic device B13 of this embodiment includes an organic thin film solar cell module A13, an organic thin film solar cell module A14, a case 61, a control unit 701, a display unit 702, an input unit 703, a microphone 704, a speaker 705, a wireless communication unit 706, and a battery. 707 is configured as a portable telephone terminal.
　ケース６１は、電子機器Ｂ１３のその他の構成要素を収容するものであり、金属、樹脂、ガラスなどの材質からなる。 The case 61 accommodates other components of the electronic device B13 and is made of a material such as metal, resin, or glass.
　図１１３は、有機薄膜太陽電池モジュールＡ１３，Ａ１４およびこれらを用いた電子機器Ｂ１３を示す平面図である。図１１４は、有機薄膜太陽電池モジュールＡ１３，Ａ１４および電子機器Ｂ１３を示す底面図である。図１１５は、図１１３のＣＸＶ－ＣＸＶ線に沿う模式的な断面図である。図１１６は、図１１３のＣＸＶＩ－ＣＸＶＩ線に沿う要部拡大断面図である。図１１７は、電子機器Ｂ１３を示すシステム構成図である。なお、図１１５においては、理解の便宜上、ケース６１、有機薄膜太陽電池モジュールＡ１３、有機薄膜太陽電池モジュールＡ１４、制御部７０１、表示部７０２およびバッテリ７０７のみを模式的に示している。 FIG. 113 is a plan view showing organic thin-film solar cell modules A13 and A14 and an electronic device B13 using them. FIG. 114 is a bottom view showing organic thin-film solar cell modules A13 and A14 and electronic device B13. 115 is a schematic cross-sectional view taken along line CXV-CXV in FIG. 116 is an enlarged cross-sectional view of a main part taken along line CXVI-CXVI in FIG. 113. FIG. 117 is a system configuration diagram showing the electronic apparatus B13. In FIG. 115, only the case 61, the organic thin film solar cell module A13, the organic thin film solar cell module A14, the control unit 701, the display unit 702, and the battery 707 are schematically shown for the sake of understanding.
　有機薄膜太陽電池モジュールＡ１３および有機薄膜太陽電池モジュールＡ１４は、電子機器Ｂ１３における電源モジュールであり、太陽光などの光を電力に変換する。具体的構成は、後述する。 Organic thin film solar cell module A13 and organic thin film solar cell module A14 are power supply modules in electronic device B13, and convert light such as sunlight into electric power. A specific configuration will be described later.
　制御部７０１は、本発明でいう駆動部の一例に相当し、有機薄膜太陽電池モジュールＡ１３および有機薄膜太陽電池モジュールＡ１４からの給電によって駆動する。なお、制御部７０１は、有機薄膜太陽電池モジュールＡ１３および有機薄膜太陽電池モジュールＡ１４からｎ直接給電されてもよいし、有機薄膜太陽電池モジュールＡ１３および有機薄膜太陽電池モジュールＡ１４からの電力がバッテリ７０７に一旦充電された後に、このバッテリ７０７からの給電によって駆動されてもよい。制御部７０１は、たとえばＣＰＵ、メモリおよびインターフェースなどを具備して構成されている。 The control unit 701 corresponds to an example of a drive unit referred to in the present invention, and is driven by power feeding from the organic thin film solar cell module A13 and the organic thin film solar cell module A14. Note that the controller 701 may be directly fed from the organic thin film solar cell module A13 and the organic thin film solar cell module A14, and the power from the organic thin film solar cell module A13 and the organic thin film solar cell module A14 is supplied to the battery 707. After being charged once, the battery 707 may be driven by power feeding. The control unit 701 includes, for example, a CPU, a memory, an interface, and the like.
　表示部７０２は、各種の情報を電子機器Ｂ１３の外観に表示するためのものである。表示部７０２は、たとえば液晶表示パネルあるいは有機ＥＬ表示パネルなどである。本実施形態においては、表示部７０２は、有機薄膜太陽電池モジュールＡ１３を透して外観に情報を表す。 The display unit 702 is for displaying various types of information on the external appearance of the electronic device B13. The display unit 702 is, for example, a liquid crystal display panel or an organic EL display panel. In the present embodiment, the display unit 702 displays information on the exterior through the organic thin film solar cell module A13.
　入力部７０３は、使用者の操作を電気信号として制御部７０１に出力するためのものである。入力部７０３は、たとえば表示部７０２に積層されたタッチパネルである。なお、表示部７０２と入力部７０３とが一体的に構成されていてもよい。 The input unit 703 is for outputting a user operation as an electrical signal to the control unit 701. The input unit 703 is a touch panel laminated on the display unit 702, for example. Note that the display unit 702 and the input unit 703 may be configured integrally.
　マイク７０４は、使用者の音声を電気信号に変換するデバイスである。スピーカ７０５は、通話相手の音声や各種の通知音などを出力するデバイスである。 The microphone 704 is a device that converts a user's voice into an electrical signal. The speaker 705 is a device that outputs the voice of the other party and various notification sounds.
　無線通信部７０６は、無線通信規格に準拠した双方向無線通信を行うデバイスである。 The wireless communication unit 706 is a device that performs bidirectional wireless communication conforming to the wireless communication standard.
　バッテリ７０７は、電子機器Ｂ１３を駆動する電力を蓄えるデバイスである。バッテリ７０７は、充放電が適宜可能に構成されている。バッテリ７０７の充電は、図示しないアダプタを用いた商用電力からの給電、または有機薄膜太陽電池モジュールＡ１３および有機薄膜太陽電池モジュールＡ１４からの給電によってなされる。 The battery 707 is a device that stores electric power for driving the electronic apparatus B13. The battery 707 is configured to be appropriately charged / discharged. The battery 707 is charged by feeding from commercial power using an adapter (not shown) or feeding from the organic thin film solar cell module A13 and the organic thin film solar cell module A14.
　有機薄膜太陽電池モジュールＡ１３および有機薄膜太陽電池モジュールＡ１４は、第１導電層１、第２導電層２、光電変換層３、支持基板４１、パッシベーション層４２、保護樹脂層４５およびバイパス導電部５を備えている。本実施形態においては、有機薄膜太陽電池モジュールＡ１３および有機薄膜太陽電池モジュールＡ１４は、平面視矩形状とされているが、これは一例であり、それぞれは様々な形状とされうる。有機薄膜太陽電池モジュールＡ１３と有機薄膜太陽電池モジュールＡ１４とは、互いの構成が一部を除き共通する。以下においては、まず有機薄膜太陽電池モジュールＡ１３について説明する。 The organic thin film solar cell module A13 and the organic thin film solar cell module A14 include the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3, the support substrate 41, the passivation layer 42, the protective resin layer 45, and the bypass conductive portion 5. I have. In the present embodiment, the organic thin-film solar cell module A13 and the organic thin-film solar cell module A14 have a rectangular shape in plan view, but this is an example, and each may have various shapes. The organic thin film solar cell module A13 and the organic thin film solar cell module A14 have the same configuration except for a part thereof. In the following, first, the organic thin film solar cell module A13 will be described.
　図１１８は、有機薄膜太陽電池モジュールＡ１３のうち第１導電層１、第２導電層２、光電変換層３、支持基板４１および保護樹脂層４５を示す要部分解斜視図である。なお、理解の便宜上,支持基板４１は想像線（二点鎖線）で示している。図１１９は、有機薄膜太陽電池モジュールＡ１３の第１導電層１を示す平面図である。図１２０は、有機薄膜太陽電池モジュールＡ１３の光電変換層３を示す平面図である。図１２１は、有機薄膜太陽電池モジュールＡ１３の第２導電層２を示す平面図である。図１２２は、有機薄膜太陽電池モジュールＡ１３の保護樹脂層４５およびバイパス導電部５を示す平面図である。 FIG. 118 is an exploded perspective view of a main part showing the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3, the support substrate 41, and the protective resin layer 45 in the organic thin film solar cell module A13. For convenience of understanding, the support substrate 41 is indicated by an imaginary line (two-dot chain line). FIG. 119 is a plan view showing the first conductive layer 1 of the organic thin-film solar cell module A13. FIG. 120 is a plan view showing the photoelectric conversion layer 3 of the organic thin film solar cell module A13. FIG. 121 is a plan view showing the second conductive layer 2 of the organic thin film solar cell module A13. 122 is a plan view showing the protective resin layer 45 and the bypass conductive portion 5 of the organic thin-film solar cell module A13.
　支持基板４１は、有機薄膜太陽電池モジュールＡ１３の土台となる部材である。支持基板４１は、たとえば透明なガラスあるいは樹脂からなる。支持基板４１の厚さは、たとえば０．０５ｍｍ～２．０ｍｍである。 The support substrate 41 is a member that becomes a base of the organic thin film solar cell module A13. The support substrate 41 is made of, for example, transparent glass or resin. The thickness of the support substrate 41 is, for example, 0.05 mm to 2.0 mm.
　第１導電層１は、支持基板４１上に形成されている。第１導電層１は、透明であり、本実施形態においてはＩＴＯからなる。図１１８および図１１９に示すように、第１導電層１は、第１電極部１１、第１端部１４、第１延出部１５、第２延出部１６、複数の開口１８およびスリット１９、第３端縁１０１および延出部１０３を有する。本実施形態においては、第１導電層１は、平面視略矩形状とされているが、これは第１導電層１の形状の一例である。第１導電層１の形状は、様々な形状に設定されうる。第１導電層１の厚さは、たとえば１００ｎｍ～３００ｎｍである。なお、図１１９において、第１電極部１１、第１端部１４、第１延出部１５および第２延出部１６には、斜線のハッチングを付している。 The first conductive layer 1 is formed on the support substrate 41. The first conductive layer 1 is transparent and is made of ITO in this embodiment. As shown in FIGS. 118 and 119, the first conductive layer 1 includes a first electrode portion 11, a first end portion 14, a first extension portion 15, a second extension portion 16, a plurality of openings 18 and slits 19. And a third end edge 101 and an extending portion 103. In the present embodiment, the first conductive layer 1 has a substantially rectangular shape in plan view, but this is an example of the shape of the first conductive layer 1. The shape of the first conductive layer 1 can be set to various shapes. The thickness of the first conductive layer 1 is, for example, 100 nm to 300 nm. In FIG. 119, the first electrode part 11, the first end part 14, the first extension part 15, and the second extension part 16 are hatched.
　第１電極部１１は、光電変換層３によって生じた正孔が集約される層であり、いわゆるアノード電極として機能する。本実施形態においては、第１導電層１の大部分が１つの第１電極部１１とされている。 The first electrode portion 11 is a layer in which holes generated by the photoelectric conversion layer 3 are aggregated, and functions as a so-called anode electrode. In the present embodiment, most of the first conductive layer 1 is a single first electrode portion 11.
　第１延出部１５は、第１電極部１１から、平面視において光電変換層３の外方に延出する部分である。図１１９においては、第１電極部１１と第１延出部１５との境界を想像線（二点鎖線）で示している。第１延出部１５を設けることにより、光電変換層３における発電によって集約された正孔を、有機薄膜太陽電池モジュールＡ１３外に導くことができる。 The first extending portion 15 is a portion extending from the first electrode portion 11 to the outside of the photoelectric conversion layer 3 in plan view. In FIG. 119, the boundary between the first electrode portion 11 and the first extension portion 15 is indicated by an imaginary line (two-dot chain line). By providing the 1st extension part 15, the hole collected by the electric power generation in the photoelectric converting layer 3 can be guide | induced outside the organic thin film solar cell module A13.
　第１端部１４は、スリット１９によって第１電極部１１と隔離された部分である。本実施形態においては、第１端部１４は、たとえば平面視円形状とされている。本実施形態においては、第１端部１４は、略円形状とされた部分と矩形状の部分とが組み合わされた形状とされている。 The first end portion 14 is a portion separated from the first electrode portion 11 by the slit 19. In the present embodiment, the first end portion 14 has, for example, a circular shape in plan view. In the present embodiment, the first end portion 14 has a shape in which a substantially circular portion and a rectangular portion are combined.
　第２延出部１６は、第１端部１４から、平面視において光電変換層３の外方に延出している。図１１９においては、第１端部１４と第２延出部１６との境界を想像線（二点鎖線）で示している。本実施形態においては、第１延出部１５と第２延出部１６とが隣り合う配置とされている。第２延出部１６を設けることにより、光電変換層３における発電によって集約された電子を、有機薄膜太陽電池モジュールＡ１３外に導くことができる。 The second extending portion 16 extends from the first end portion 14 to the outside of the photoelectric conversion layer 3 in plan view. In FIG. 119, the boundary between the first end portion 14 and the second extending portion 16 is indicated by an imaginary line (two-dot chain line). In the present embodiment, the first extending portion 15 and the second extending portion 16 are arranged adjacent to each other. By providing the 2nd extension part 16, the electrons concentrated by the electric power generation in the photoelectric converting layer 3 can be guide | induced outside the organic thin-film solar cell module A13.
　複数の開口１８は、厚さ方向に第１導電層１を貫通した開口部分である。本実施形態においては、２つの開口１８が設けられている。図１１９における図中上方の開口１８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口１８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 18 are openings that penetrate the first conductive layer 1 in the thickness direction. In the present embodiment, two openings 18 are provided. The upper opening 18 in FIG. 119 is provided to make the speaker 705 function, for example. On the other hand, the largest opening 18 in the center in the figure is provided to display the information displayed by the display unit 702 on the appearance.
　第３端縁１０１は、図中中央の開口１８を規定する端縁である。本実施形態においては、第３端縁１０１は、開口１８を四方から囲む端縁となっており、平面視矩形環状である。なお、第３端縁１０１は、開口１８を四方から囲む形状に限定されない。たとえば、第３端縁１０１が開口１８に三方から隣接することにより、開口１８が第１電極部１１から平面視において外方に開いた構成であってもよい。あるいは、第３端縁１０１は、開口１８に対して二方あるいは一方のみから隣接するものであってもよい。第３端縁１０１に隣接する領域、すなわち図中中央の１８からは、支持基板４１が露出している。また、第３端縁１０１は、後述する保護樹脂層４５の第２端縁４５１およびパッシベーション層４２の第１端縁４２１から延出する第１導電層１の部分の内端縁とされている。 The third edge 101 is an edge that defines the central opening 18 in the drawing. In the present embodiment, the third end edge 101 is an end edge surrounding the opening 18 from four directions, and has a rectangular shape in plan view. The third end edge 101 is not limited to a shape surrounding the opening 18 from four directions. For example, the third end edge 101 may be adjacent to the opening 18 from three directions so that the opening 18 opens outward from the first electrode portion 11 in plan view. Alternatively, the third edge 101 may be adjacent to the opening 18 from two or only one side. The support substrate 41 is exposed from the region adjacent to the third edge 101, that is, from the center 18 in the drawing. The third edge 101 is an inner edge of a portion of the first conductive layer 1 that extends from a second edge 451 of a protective resin layer 45 to be described later and a first edge 421 of the passivation layer 42. .
　延出部１０３は、パッシベーション層４２および保護樹脂層４５から外方に延出する部位である。本実施形態においては、第１導電層１の略全外周端縁に、延出部１０３が設けられている。 The extending portion 103 is a portion extending outward from the passivation layer 42 and the protective resin layer 45. In the present embodiment, the extending portion 103 is provided on substantially the entire outer peripheral edge of the first conductive layer 1.
　第２導電層２は、その大部分が光電変換層３を介して第１導電層１上に積層されている。また、第２導電層２の一部は、第１導電層１に直接接している。第２導電層２の材質は特に限定されないが、本実施形態においては、第２導電層２は、Ａｌ、Ｗ、Ｍｏ、Ｍｎ、Ｍｇに代表される金属からなる。以下においては、第２導電層２がＡｌからなる場合を例に説明する。したがって、第２導電層２は、透明ではない。またこの場合、第２導電層２の支持基板４１とは反対側の表面に、Ａｌ２Ｏ３からなる不動態皮膜（図示略）が形成されてもよい。第２導電層２の厚さは、たとえば３０ｎｍ～１５０ｎｍである。 Most of the second conductive layer 2 is laminated on the first conductive layer 1 via the photoelectric conversion layer 3. A part of the second conductive layer 2 is in direct contact with the first conductive layer 1. Although the material of the 2nd conductive layer 2 is not specifically limited, In this embodiment, the 2nd conductive layer 2 consists of metals represented by Al, W, Mo, Mn, and Mg. Hereinafter, a case where the second conductive layer 2 is made of Al will be described as an example. Therefore, the second conductive layer 2 is not transparent. In this case, a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second conductive layer 2 opposite to the support substrate 41. The thickness of the second conductive layer 2 is, for example, 30 nm to 150 nm.
　図１２１に示すように、第２導電層２は、第２電極部２１、第２端部２４および複数の開口２８を有する。本実施形態においては、第２導電層２は、平面視略矩形状とされているが、これは第２導電層２の形状の一例である。第２導電層２の形状は、様々な形状に設定されうる。なお、図１２１においては、第２電極部２１および第２端部２４に、斜線のハッチングを付している。 As shown in FIG. 121, the second conductive layer 2 has a second electrode portion 21, a second end portion 24, and a plurality of openings 28. In the present embodiment, the second conductive layer 2 has a substantially rectangular shape in plan view, but this is an example of the shape of the second conductive layer 2. The shape of the second conductive layer 2 can be set to various shapes. In FIG. 121, the second electrode portion 21 and the second end portion 24 are hatched.
　第２電極部２１は、光電変換層３によって生じた電子が集約される層であり、いわゆるカソード電極として機能する。第２電極部２１は、平面視において、第１電極部１１と一致する。本実施形態においては、第２導電層２の大部分が第２電極部２１とされている。 The second electrode portion 21 is a layer in which electrons generated by the photoelectric conversion layer 3 are collected, and functions as a so-called cathode electrode. The second electrode portion 21 coincides with the first electrode portion 11 in plan view. In the present embodiment, most of the second conductive layer 2 is the second electrode portion 21.
　第２端部２４は、平面視において第１導電層１の第１端部１４に一致し、且つ第２電極部２１に繋がっている。図１２１においては、理解の便宜上、第２端部２４の形状を想像線（二点鎖線）で示している。第２端部２４は、第１端部１４と同様に平面視略円形状の部分と平面視矩形状の部分とが組み合わされたとされている。 The second end portion 24 coincides with the first end portion 14 of the first conductive layer 1 in plan view and is connected to the second electrode portion 21. In FIG. 121, for convenience of understanding, the shape of the second end portion 24 is indicated by an imaginary line (two-dot chain line). Similarly to the first end portion 14, the second end portion 24 is a combination of a substantially circular portion in plan view and a rectangular portion in plan view.
　複数の開口２８は、厚さ方向に第２導電層２を貫通する開口部分である。本実施形態においては、２つの開口２８が設けられている。図１２１における図中上方の開口２８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口２８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 28 are openings that penetrate the second conductive layer 2 in the thickness direction. In the present embodiment, two openings 28 are provided. The upper opening 28 in FIG. 121 is provided in order to make the speaker 705 function, for example. On the other hand, the largest opening 28 in the center in the figure is provided to display the information displayed by the display unit 702 on the appearance.
　第４内方退避端縁２０１は、図中中央の開口２８を規定する端縁である。本実施形態においては、第４内方退避端縁２０１は、開口２８を四方から囲む端縁となっており、平面視矩形環状である。なお、第４内方退避端縁２０１は、開口２８を四方から囲む形状に限定されない。たとえば、第４内方退避端縁２０１が開口２８を三方から隣接することにより、開口２８が第２電極部２１から平面視において外方に開いた構成であってもよい。あるいは、第４内方退避端縁２０１は、開口２８に対して二方あるいは一方のみから隣接するものであってもよい。また、図１１６に示すように、第４内方退避端縁２０１は、第３端縁１０１よりも内方（開口１８内に延出する方向とは反対側）に退避している。 The fourth inward retracting edge 201 is an edge that defines the central opening 28 in the drawing. In the present embodiment, the fourth inward retracting edge 201 is an edge that surrounds the opening 28 from four directions and has a rectangular shape in plan view. The fourth inward retracting edge 201 is not limited to a shape surrounding the opening 28 from four directions. For example, the fourth inward retracting edge 201 may be configured such that the opening 28 is opened outward from the second electrode portion 21 in plan view by adjoining the opening 28 from three directions. Alternatively, the fourth inward retracting edge 201 may be adjacent to the opening 28 from two or only one side. Also, as shown in FIG. 116, the fourth inward retracting edge 201 is retracted inward (on the opposite side to the direction extending into the opening 18) than the third end edge 101.
　第４外方退避端縁２０２は、図１１６に示すように、後述するパッシベーション層４２の第１外方端縁４２２および保護樹脂層４５の第２外方端縁４５２よりも平面視において内方（図１１６における右方）に退避している。本実施形態においては、第４外方退避端縁２０２は、平面視環状である。 As shown in FIG. 116, the fourth outward retracting edge 202 is more inward in plan view than a first outer end edge 422 of a passivation layer 42 to be described later and a second outer end edge 452 of the protective resin layer 45. It is retracted (to the right in FIG. 116). In the present embodiment, the fourth outward retracting edge 202 has an annular shape in plan view.
　光電変換層３は、第１導電層１と第２導電層２とに挟まれて、支持基板４１に積層されている。光電変換層３は、有機薄膜からなる層であり、受けた光を電力に変換する光電変換機能を発揮する。光電変換層３の具体的構成は特に限定されないが、その一例を挙げると、バルクヘテロ接合有機活性層と、このバルクヘテロ接合有機活性層に対して第１導電層１側に積層された正孔輸送層とからなる。本実施形態においては、光電変換層３は、平面視矩形状とされているが、これは一例であり、光電変換層３は、様々な形状とされうる。光電変換層３の厚さは、たとえば５０ｎｍ～３００ｎｍである。 The photoelectric conversion layer 3 is sandwiched between the first conductive layer 1 and the second conductive layer 2 and laminated on the support substrate 41. The photoelectric conversion layer 3 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power. The specific configuration of the photoelectric conversion layer 3 is not particularly limited. For example, a bulk heterojunction organic active layer and a hole transport layer stacked on the first conductive layer 1 side with respect to the bulk heterojunction organic active layer are given. It consists of. In the present embodiment, the photoelectric conversion layer 3 has a rectangular shape in plan view, but this is an example, and the photoelectric conversion layer 3 can have various shapes. The thickness of the photoelectric conversion layer 3 is, for example, 50 nm to 300 nm.
　バルクヘテロ接合有機活性層は、ｐ型有機活性層領域とｎ型有機活性層領域が混在し、複雑なバルクへテロｐｎ接合を形成している。ｐ型有機活性層領域は、例えば、Ｐ３ＨＴ（poly(3-hexylthiophene-2,5diyl)）で形成され、ｎ型有機活性層領域は、例えば、ＰＣＢＭ（6,6-phenyl-C61-butyric acid methyl ester）で形成されている。正孔輸送層は、たとえばＰＥＤＯＴ：ＰＳＳで形成されている。 In the bulk heterojunction organic active layer, a p-type organic active layer region and an n-type organic active layer region are mixed to form a complex bulk hetero pn junction. The p-type organic active layer region is formed of, for example, P3HT (poly (3-hexylthiophene-2,5diyl)), and the n-type organic active layer region is, for example, PCBM (6,6-phenyl-C61-butyric acid methyl). ester). The hole transport layer is made of, for example, PEDOT: PSS.
　光電変換層３の形成に用いられる材質を例示すると、フタロシアニン（Ｐｃ:Phthalocyanine）、亜鉛フタロシアニン（ＺｎＰｃ:Zinc- phthalocyanine）、Ｍｅ－Ｐｔｃｄｉ（N,N’-dimethyl perylene-3,4,9,10-dicarboximide）、フラーレン（C 60 :Buckminster fullerene）が挙げられる。これらの材質は、たとえば真空蒸着に使用される。 Examples of materials used to form the photoelectric conversion layer 3 include phthalocyanine (Pc: Phthhalocyanine), zinc phthalocyanine (ZnPc: Zinc- phthalocyanine), Me-Ptcdi (N, N'-dimethyl perylene-3,4,9,10). -dicarboximide) and fullerene (C 60: Buckminster fullerene). These materials are used for vacuum deposition, for example.
　また、光電変換層３の形成に用いられる他の材質を例示すると、ＭＤＭＯ－ＰＰＶ（poly[2-methoxy-5-(3,7-dimethyl octyloxy)]-1,4-phenylene vinylene）、ＰＣＤＴＢＴ（poly[N-9’-hepta-decanyl-2,7-carbazole-alt-5,5-(4’,7’-di-thienyl-2’1’,3’-b3nzothiadizaole)]）、ＰＣ６０ＢＭ（6,6-phenyl-C61-butyric acid methyl ester）、ＰＣ７０ＢＭ（6,6-phenyl-C71-butyric acid methyl ester）が挙げられる。これらの材質は、たとえば溶液プロセスに使用される。 Other materials used for forming the photoelectric conversion layer 3 are exemplified by MDMO-PPV (poly [2-methoxy-5- (3,7-dimethyl-octyloxy)]-1,4-phenylene-vinylene), PCDTBT ( poly [N-9'-hepta-decanyl-2,7-carbazole-alt-5,5- (4 ', 7'-di-thienyl-2'1', 3'-b3nzothiadizaole)]), PC60BM (6 , 6-phenyl-C61-butyric acid methyl ester) and PC70BM (6,6-phenyl-C71-butyric acid methyl ester). These materials are used, for example, in solution processes.
　図１２０に示すように、光電変換層３は、非発電領域３０、発電領域３１および意匠表示部３５、複数の開口３８、第５内方退避端縁３０１および第５外方退避端縁３０２を有している。なお、図１２０においては、非発電領域３０および発電領域３１に、複数の離散点からなるハッチングを付している。 As shown in FIG. 120, the photoelectric conversion layer 3 includes a non-power generation region 30, a power generation region 31 and a design display unit 35, a plurality of openings 38, a fifth inner retraction edge 301, and a fifth outer retraction edge 302. Have. In FIG. 120, the non-power generation region 30 and the power generation region 31 are hatched with a plurality of discrete points.
　意匠表示部３５は、第１導電層１を透して外観に表れる意匠を構成する部位である。意匠表示部３５が構成する意匠とは、使用者等が目視することによって、文字、記号、図柄などの視覚的特異部分として視認されうるものを指す。本実施形態においては、意匠表示部３５は、円環形状を表している。 The design display part 35 is a part that constitutes a design that appears through the first conductive layer 1 and appears on the exterior. The design which the design display part 35 comprises refers to what can be visually recognized as visually peculiar parts, such as a character, a symbol, and a design, when a user etc. look. In the present embodiment, the design display unit 35 represents an annular shape.
　本実施形態においては、意匠表示部３５は、貫通部３５０によって構成されている。貫通部３５０は、光電変換層３を厚さ方向に貫通する態様の部位である。このような貫通部３５０は、第１導電層１を透して外観に表れる。また、本実施形態においては、貫通部３５０は、第２導電層２を第１導電層１側に露出させている。すなわち、貫通部３５０を通じて第２導電層２の一部が外観に表れている。 In the present embodiment, the design display unit 35 is configured by a through-hole portion 350. The penetrating part 350 is a part having a mode of penetrating the photoelectric conversion layer 3 in the thickness direction. Such a penetrating portion 350 appears through the first conductive layer 1. In the present embodiment, the penetrating portion 350 exposes the second conductive layer 2 to the first conductive layer 1 side. That is, a part of the second conductive layer 2 appears on the exterior through the through part 350.
　発電領域３１は、第１導電層１の第１電極部１１および第２導電層２の第２電極部２１に挟まれ、且つ光電変換機能を発揮することにより発電に寄与する領域である。また、発電領域３１の形状は、平面視において、第１電極部１１および第２電極部２１に一致する。 The power generation region 31 is a region that is sandwiched between the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 and contributes to power generation by exhibiting a photoelectric conversion function. The shape of the power generation region 31 matches the first electrode part 11 and the second electrode part 21 in plan view.
　非発電領域３０は、光電変換層３のうち平面視において第１導電層１の第１電極部１１および第２導電層２の第２電極部２１とは重ならない領域であり、第１導電層１の第１端部１４と重なっている。第１端部１４は、第２導電層２の第２端部２４と接しており、集約された正孔と電子とが即座に結合してしまう。このため、非発電領域３０は、且つ発電に寄与しない。すなわち、光電変換層３のうち複数の発電領域３１以外の領域が、非発電領域３０とされている。 The non-power generation region 30 is a region of the photoelectric conversion layer 3 that does not overlap the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 in plan view. 1 overlaps the first end 14 of the first. The first end portion 14 is in contact with the second end portion 24 of the second conductive layer 2, and the aggregated holes and electrons are immediately combined. For this reason, the non-power generation region 30 does not contribute to power generation. That is, a region other than the plurality of power generation regions 31 in the photoelectric conversion layer 3 is a non-power generation region 30.
　本実施形態においては、非発電領域３０は、端部領域３４とされている。端部領域３４は、貫通部３５０（意匠表示部３５）を有している。端部領域３４は、平面視において第１導電層１の第１端部１４に内包される貫通部３５０（意匠表示部３５）を含み、且つ第１導電層１の第１端部１４に重なっている。また、端部領域３４は、第２導電層２の第２端部２４と重なっている。第１導電層１の第１端部１４と第２導電層２の第２端部２４とは、端部領域３４の貫通部３５０を通じて接している。 In the present embodiment, the non-power generation region 30 is an end region 34. The end region 34 has a penetrating portion 350 (design display portion 35). The end region 34 includes a through portion 350 (design display portion 35) included in the first end portion 14 of the first conductive layer 1 in plan view, and overlaps the first end portion 14 of the first conductive layer 1. ing. The end region 34 overlaps the second end 24 of the second conductive layer 2. The first end portion 14 of the first conductive layer 1 and the second end portion 24 of the second conductive layer 2 are in contact with each other through the through portion 350 of the end region 34.
　複数の開口３８は、光電変換層３を厚さ方向に貫通する開口部分である。本実施形態においては、２つの開口３８が設けられている。図１２０における図中上方の開口３８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口３８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 38 are openings that penetrate the photoelectric conversion layer 3 in the thickness direction. In the present embodiment, two openings 38 are provided. The upper opening 38 in FIG. 120 is provided to make the speaker 705 function, for example. On the other hand, the largest opening 38 in the center in the drawing is provided to display the information displayed by the display unit 702 on the appearance.
　第５内方退避端縁３０１は、図中中央の開口３８を規定する端縁である。本実施形態においては、第５内方退避端縁３０１は、開口３８を四方から囲む端縁となっており、平面視矩形環状である。なお、第５内方退避端縁３０１は、開口３８を四方から囲む形状に限定されない。たとえば、第５内方退避端縁３０１が開口３８を三方から隣接することにより、開口３８が発電領域３１から平面視において外方に開いた構成であってもよい。あるいは、第５内方退避端縁３０１は、開口３８に対して二方あるいは一方のみに設けられたものであってもよい。また、図１１６に示すように、第５内方退避端縁３０１は、第３端縁１０１よりも内方（開口１８内に延出する方向とは反対側）に退避している。 The fifth inward retracting edge 301 is an edge that defines the central opening 38 in the drawing. In the present embodiment, the fifth inward retracting edge 301 is an edge that surrounds the opening 38 from four directions and has a rectangular ring shape in plan view. The fifth inward retracting edge 301 is not limited to a shape surrounding the opening 38 from four directions. For example, the fifth inward retracting edge 301 may be configured such that the opening 38 is opened outward from the power generation region 31 in a plan view by adjoining the opening 38 from three directions. Alternatively, the fifth inward retracting edge 301 may be provided in two or only one with respect to the opening 38. Also, as shown in FIG. 116, the fifth inward retracting edge 301 is retracted inward (opposite to the direction extending into the opening 18) than the third end edge 101.
　第５外方退避端縁３０２は、図１１６に示すように、後述するパッシベーション層４２の第１外方端縁４２２および保護樹脂層４５の第２外方端縁４５２よりも平面視において内方（図１１６における右方）に退避している。本実施形態においては、第５外方退避端縁３０２は、平面視環状である。 As shown in FIG. 116, the fifth outer retreat end edge 302 is inward in a plan view than a first outer end edge 422 of a passivation layer 42 and a second outer end edge 452 of the protective resin layer 45 described later. It is retracted (to the right in FIG. 116). In the present embodiment, the fifth outward retracting edge 302 is annular in plan view.
　上述した構成により、有機薄膜太陽電池モジュールＡ１３においては、第１延出部１５が第１電極部１１に繋がっている。また、第２電極部２１には、第２端部２４が繋がっている。第２端部２４は、端部領域３４の貫通部３５０を通じて第１端部１４と接している。第１端部１４には、第２延出部１６が繋がっている。この結果、第１延出部１５と第２延出部１６とが有機薄膜太陽電池モジュールＡ１３の出力端子として機能する。 With the above-described configuration, the first extending portion 15 is connected to the first electrode portion 11 in the organic thin film solar cell module A13. Further, the second end portion 24 is connected to the second electrode portion 21. The second end portion 24 is in contact with the first end portion 14 through the through portion 350 of the end region 34. A second extending portion 16 is connected to the first end portion 14. As a result, the 1st extension part 15 and the 2nd extension part 16 function as an output terminal of organic thin film solar cell module A13.
　パッシベーション層４２は、第２導電層２上に積層されており、第２導電層２および光電変換層３を保護している。パッシベーション層４２は、たとえばＳｉＮまたはＳｉＯＮからなる。パッシベーション層４２の厚さは、たとえば０．５μｍ～２．０μｍであり、本実施形態においては、たとえば１．５μｍ程度とされる。 The passivation layer 42 is laminated on the second conductive layer 2 and protects the second conductive layer 2 and the photoelectric conversion layer 3. The passivation layer 42 is made of, for example, SiN or SiON. The thickness of the passivation layer 42 is, for example, 0.5 μm to 2.0 μm. In the present embodiment, the thickness is, for example, about 1.5 μm.
　保護樹脂層４５は、パッシベーション層４２を覆っている層である。保護樹脂層４５は、たとえば紫外線硬化樹脂からなる。保護樹脂層４５の厚さは、たとえば３μｍ～２０μｍであり、本実施形態においては、たとえば１０μｍ程度とされる。 The protective resin layer 45 is a layer that covers the passivation layer 42. The protective resin layer 45 is made of, for example, an ultraviolet curable resin. The thickness of the protective resin layer 45 is, for example, 3 μm to 20 μm. In the present embodiment, the thickness is, for example, about 10 μm.
　図１２２に示すように、保護樹脂層４５は、複数の開口４５８、第２端縁４５１および第２外方端縁４５２を有する。なお、図１２２においては、保護樹脂層４５に斜線のハッチングを付している。 As shown in FIG. 122, the protective resin layer 45 has a plurality of openings 458, a second end edge 451, and a second outer end edge 452. In FIG. 122, the protective resin layer 45 is hatched.
　複数の開口４５８は、保護樹脂層４５の一部が削除された態様であり、保護樹脂層４５を貫通している。本実施形態においては、２つの開口４５８が設けられている。図１２２における図中上方の開口４５８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口４５８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 458 is a mode in which a part of the protective resin layer 45 is removed, and penetrates the protective resin layer 45. In the present embodiment, two openings 458 are provided. In FIG. 122, the upper opening 458 in the drawing is provided to allow the speaker 705 to function, for example. On the other hand, the largest opening 458 in the center in the drawing is provided to display the information displayed by the display unit 702 on the appearance.
　第２端縁４５１は、図中中央の開口４５８を規定する端縁である。本実施形態においては、第２端縁４５１は、開口４５８を四方から囲む端縁となっており、平面視矩形環状である。なお、第２端縁４５１は、開口４５８を四方から囲む形状に限定されない。たとえば、第２端縁４５１が開口４５８を三方から隣接することにより、開口４５８が保護樹脂層４５から平面視において外方に開いた構成であってもよい。あるいは、第２端縁４５１は、開口４５８に対して二方あるいは一方のみ設けられたものであってもよい。 The second edge 451 is an edge that defines the central opening 458 in the drawing. In the present embodiment, the second end edge 451 is an end edge that surrounds the opening 458 from four directions, and has a rectangular ring shape in plan view. The second end edge 451 is not limited to a shape surrounding the opening 458 from four sides. For example, the second edge 451 may be adjacent to the opening 458 from three directions, so that the opening 458 opens outward from the protective resin layer 45 in plan view. Alternatively, the second end edge 451 may be provided in two or only one with respect to the opening 458.
　第２外方端縁４５２は、平面視において光電変換層３の少なくとも一部を挟んで第２端縁４５１と反対側に位置しており、本実施形態においては、保護樹脂層４５の外周端縁である。 The second outer end edge 452 is located on the opposite side of the second end edge 451 across at least a part of the photoelectric conversion layer 3 in plan view, and in this embodiment, the outer peripheral end of the protective resin layer 45. It is an edge.
　パッシベーション層４２は、第１端縁４２１および第１外方端縁４２２を有している。 The passivation layer 42 has a first edge 421 and a first outer edge 422.
　第１端縁４２１は、平面視において第２端縁４５１と一致している。また、本実施形態においては、第１端縁４２１は、第２端縁４５１と連続した面をなしている。第１外方端縁４２２は、平面視において第２外方端縁４５２と一致している。また、本実施形態においては、第１外方端縁４２２は、第２外方端縁４５２と連続した面をなしている。 The first end edge 421 coincides with the second end edge 451 in plan view. In the present embodiment, the first end edge 421 forms a surface continuous with the second end edge 451. The first outer end edge 422 coincides with the second outer end edge 452 in plan view. In the present embodiment, the first outer end edge 422 forms a surface that is continuous with the second outer end edge 452.
　図１１６に示すように、第２端縁４５１および第１端縁４２１によって囲まれた領域である開口４５８から、支持基板４１の一部が露出領域４１１として露出している。また、露出領域４１１は、第１導電層１等によって覆われておらず、支持基板４１の表面が直接露出している。 116, a part of the support substrate 41 is exposed as an exposed region 411 from an opening 458 that is a region surrounded by the second end edge 451 and the first end edge 421. The exposed region 411 is not covered with the first conductive layer 1 or the like, and the surface of the support substrate 41 is directly exposed.
　バイパス導電部５は、第１導電層１に到達した正孔を集電するための、第１導電層１より低抵抗な経路を構成するためのものである。本実施形態においては、バイパス導電部５は、２つのバスバー部５１、複数の連絡部５２および２つの集極部５３を有する。バイパス導電部５は、第１導電層１よりも低抵抗な材質からなり、たとえばＡｇまたはカーボンを含む。 The bypass conductive portion 5 is for configuring a path having a lower resistance than the first conductive layer 1 for collecting holes that have reached the first conductive layer 1. In the present embodiment, the bypass conductive portion 5 includes two bus bar portions 51, a plurality of connecting portions 52, and two pole collecting portions 53. The bypass conductive portion 5 is made of a material having a resistance lower than that of the first conductive layer 1 and contains, for example, Ag or carbon.
　図１１６および図１２２に示すように、１つのバスバー部５１は、第２端縁４５１および第１端縁４２１を全長にわたって覆っている。このバスバー部５１は、第１導電層１のうち第３端縁１０１と第１端縁４２１（第２端縁４５１）との間に位置する部分を覆っている。また、このバスバー部５１の内端縁は、平面視において第３端縁１０１と一致している。他方のバスバー部５１は、第２外方端縁４５２および第１外方端縁４２２を全長にわたって覆っている。このバスバー部５１は、第１導電層１の延出部１０３を覆っている。このような構成により、２つのバスバー部５１は、それぞれが第１導電層１と導通している。 116 and 122, one bus bar portion 51 covers the second end edge 451 and the first end edge 421 over the entire length. The bus bar portion 51 covers a portion of the first conductive layer 1 located between the third end edge 101 and the first end edge 421 (second end edge 451). Further, the inner edge of the bus bar portion 51 coincides with the third edge 101 in plan view. The other bus bar portion 51 covers the second outer end edge 452 and the first outer end edge 422 over the entire length. The bus bar portion 51 covers the extending portion 103 of the first conductive layer 1. With such a configuration, each of the two bus bar portions 51 is electrically connected to the first conductive layer 1.
　複数の連絡部５２は、保護樹脂層４５上に形成された部分であり、図１２２における図中内側のバスバー部５１と図中外側の連絡部５２とを連結している。２つの集極部５３は、一方が第１導電層１に導通しており、他方が第２導電層２に導通している。 The plurality of connecting portions 52 are portions formed on the protective resin layer 45, and connect the inner bus bar portion 51 in FIG. 122 and the outer connecting portion 52 in the drawing. One of the two current collectors 53 is electrically connected to the first conductive layer 1, and the other is electrically connected to the second conductive layer 2.
　図１２３は、有機薄膜太陽電池モジュールＡ１４の第１導電層１を示す平面図である。図１２４は、有機薄膜太陽電池モジュールＡ１４の光電変換層３を示す平面図である。図１２５は、有機薄膜太陽電池モジュールＡ１４の第２導電層２を示す平面図である。図１２６は、有機薄膜太陽電池モジュールＡ１４の保護樹脂層４５およびバイパス導電部５を示す平面図である。 FIG. 123 is a plan view showing the first conductive layer 1 of the organic thin-film solar cell module A14. FIG. 124 is a plan view showing the photoelectric conversion layer 3 of the organic thin film solar cell module A14. FIG. 125 is a plan view showing the second conductive layer 2 of the organic thin-film solar cell module A14. 126 is a plan view showing the protective resin layer 45 and the bypass conductive portion 5 of the organic thin-film solar cell module A14.
　有機薄膜太陽電池モジュールＡ１４においては、表示部７０２を外観に表すための開口１８、開口２８、開口３８、開口４５８等が設けられていない。このため、第３端縁１０１、第４内方退避端縁２０１、第５内方退避端縁３０１、第１端縁４２１および第２端縁４５１は設けられていない。また、バイパス導電部５は、外周に沿うバスバー部５１を有し、連絡部５２は、有していない。 In the organic thin film solar cell module A14, the opening 18, the opening 28, the opening 38, the opening 458 and the like for displaying the display portion 702 on the appearance are not provided. For this reason, the 3rd edge 101, the 4th inward retracting edge 201, the 5th inward retracting edge 301, the 1st end edge 421, and the 2nd end edge 451 are not provided. In addition, the bypass conductive portion 5 has a bus bar portion 51 along the outer periphery, and does not have a connecting portion 52.
　本実施形態においては、図１２４に示すように、光電変換層３に複数の貫通部３５０（３５）が設けられている。これらの貫通部３５０は、それぞれがアルファベットを表している。この貫通部３５０を利用して、第１導電層１の第１端部１４と第２導電層２の第２端部２４とが接している点は、有機薄膜太陽電池モジュールＡ１３と同様である。 In the present embodiment, as shown in FIG. 124, the photoelectric conversion layer 3 is provided with a plurality of through portions 350 (35). Each of these penetrating portions 350 represents an alphabet. The point where the first end portion 14 of the first conductive layer 1 and the second end portion 24 of the second conductive layer 2 are in contact with each other using the through portion 350 is the same as that of the organic thin film solar cell module A13. .
　次いで、有機薄膜太陽電池モジュールＡ１３の製造方法の一例について、図１２７～図１３４を参照しつつ、以下に説明する。なお、これらの図においては、理解の便宜上、図１１６とは、天地逆に表されている。また、図１２７～図１３４においては、図１１３に示した電子機器Ｂ１３のＣＸＶＩ－ＣＸＶＩ線における断面構造を生成する過程を示している。 Next, an example of a method for manufacturing the organic thin film solar cell module A13 will be described below with reference to FIGS. 127 to 134. In these drawings, for convenience of understanding, FIG. 116 is shown upside down. 127 to 134 show a process of generating a cross-sectional structure taken along the line CXVI-CXVI of the electronic apparatus B13 shown in FIG.
　まず、図１２７に示すように支持基板４１を用意する。そして、図１２８に示すように、支持基板４１の片面にたとえばスパッタ法などの一般的な手法によりＩＴＯからなる第１導電膜１０を積層する。次に、該ＩＴＯにパターニングを施し、開口１８、スリット１９等のパターンを形成するためのパターニングを行う。ここで、ＩＴＯへのパターニング手法としては、たとえばウエットエッチングを用いた手法、酸素プラズマエッチングを用いた手法、Ｇｒｅｅｎレーザー光等のレーザパターニングを用いた手法が適宜採用される。なお、第１導電膜１０は、上記に限られず、例えばナノインプリントを用いた手法によって、支持基板４１上に直接的にＩＴＯをパターニングすることで形成するようにしても良い。 First, a support substrate 41 is prepared as shown in FIG. Then, as shown in FIG. 128, the first conductive film 10 made of ITO is laminated on one surface of the support substrate 41 by a general method such as sputtering. Next, patterning is performed on the ITO to form patterns such as openings 18 and slits 19. Here, as a patterning technique to ITO, for example, a technique using wet etching, a technique using oxygen plasma etching, and a technique using laser patterning such as Green laser light are appropriately employed. In addition, the 1st electrically conductive film 10 is not restricted above, For example, you may make it form by patterning ITO directly on the support substrate 41 by the method using nanoimprint.
　次いで、図１２９に示すように、光電変換層３を形成する。光電変換層３の形成は、たとえば、スピンコート塗布により支持基板４１上および第１導電膜１０上に有機膜を成膜した後に、酸素プラズマエッチング、レーザパターニングを用いることによって、第５内方退避端縁３０１、第５外方退避端縁３０２、開口３８、貫通部３５０（意匠表示部３５）を有する構成に仕上げることにより行う。なお、光電変換層３は、上記に限定されず、スリットコート法、キャピラリーコート法、グラビア印刷などの手法によって、支持基板４１上および第１導電膜１０上に直接的に有機膜をパターニングすることで形成するようにしても良い。 Next, as shown in FIG. 129, the photoelectric conversion layer 3 is formed. The photoelectric conversion layer 3 is formed by, for example, depositing an organic film on the support substrate 41 and the first conductive film 10 by spin coating and then using oxygen plasma etching and laser patterning to perform fifth inward retraction. This is done by finishing the structure having an end edge 301, a fifth outward retracting end edge 302, an opening 38, and a penetrating part 350 (design display part 35). The photoelectric conversion layer 3 is not limited to the above, and an organic film is directly patterned on the support substrate 41 and the first conductive film 10 by a technique such as a slit coating method, a capillary coating method, or gravure printing. It may be formed by.
　次いで、図１３０に示すように、第２導電層２を形成する。第２導電層２の形成は、たとえば上述した金属を真空加熱蒸着法によって支持基板４１、第１導電膜１０および光電変換層３上に金属膜を成膜する。次に、該金属膜に例えばマスク層を用いたエッチングを行うことによりパターニングを施す。このパターニングにより、光電変換層３上に第４内方退避端縁２０１および第４外方退避端縁２０２を有する第２導電層２を形成する。 Next, as shown in FIG. 130, the second conductive layer 2 is formed. The second conductive layer 2 is formed, for example, by forming a metal film on the support substrate 41, the first conductive film 10 and the photoelectric conversion layer 3 using the above-described metal by vacuum heating vapor deposition. Next, the metal film is patterned by etching using, for example, a mask layer. By this patterning, the second conductive layer 2 having the fourth inner withdrawal edge 201 and the fourth outer withdrawal edge 202 is formed on the photoelectric conversion layer 3.
　次いで、図１３１に示すように、絶縁膜４２０を形成する。絶縁膜４２０の形成は、たとえばプラズマＣＶＤ法によってＳｉＮまたはＳｉＯＮなどの膜を支持基板４１、第１導電層１、光電変換層３および第２導電層２上に形成することにより行う。 Next, as shown in FIG. 131, an insulating film 420 is formed. The insulating film 420 is formed by forming a film such as SiN or SiON on the support substrate 41, the first conductive layer 1, the photoelectric conversion layer 3, and the second conductive layer 2 by, for example, plasma CVD.
　次いで、図１３２に示すように、保護樹脂層４５を形成する。保護樹脂層４５の形成は、たとえば紫外線硬化樹脂を含む液体樹脂材料をスクリーン印刷によって絶縁膜４２０上に塗布し、紫外線を照射することによって硬化させる。これにより、第２端縁４５１および第２外方端縁４５２を有する保護樹脂層４５が得られる。 Next, as shown in FIG. 132, a protective resin layer 45 is formed. The protective resin layer 45 is formed by applying a liquid resin material containing, for example, an ultraviolet curable resin on the insulating film 420 by screen printing and irradiating it with ultraviolet rays. Thereby, the protective resin layer 45 having the second end edge 451 and the second outer end edge 452 is obtained.
　次いで、図１３３に示すように、保護樹脂層４５をマスクとして用いたパターニングを絶縁膜４２０に施す。このパターニングは、たとえばフッ化水素を０．５５％～４．５％含むフッ化水素酸を用いたウエットエッチングによって行う。このようなフッ化水素酸は、紫外線硬化樹脂からなる保護樹脂層４５をほとんど溶解しない一方、ＳｉＮ等からなる絶縁膜４２０を選択的に溶解する。また、フッ化水素酸は、ＩＴＯ等からなる第１導電膜１０はほとんど溶解しない。この結果、第１端縁４２１および第１外方端縁４２２を有するパッシベーション層４２が形成される。第１端縁４２１は、平面視において第２端縁４５１と一致する。第１端縁４２１と第２端縁４５１とは、連続した面をなす。また、第１外方端縁４２２は、平面視において第２外方端縁４５２と一致する。第１外方端縁４２２と第２外方端縁４５２とは、連続した面をなす。 Next, as shown in FIG. 133, the insulating film 420 is patterned using the protective resin layer 45 as a mask. This patterning is performed, for example, by wet etching using hydrofluoric acid containing 0.55% to 4.5% hydrogen fluoride. Such hydrofluoric acid does not substantially dissolve the protective resin layer 45 made of an ultraviolet curable resin, but selectively dissolves the insulating film 420 made of SiN or the like. Further, hydrofluoric acid hardly dissolves the first conductive film 10 made of ITO or the like. As a result, a passivation layer 42 having a first edge 421 and a first outer edge 422 is formed. The first edge 421 coincides with the second edge 451 in plan view. The first edge 421 and the second edge 451 form a continuous surface. The first outer end edge 422 coincides with the second outer end edge 452 in plan view. The first outer end edge 422 and the second outer end edge 452 form a continuous surface.
　次いで、図１３４に示すように、バイパス導電部５を形成する。バイパス導電部５の形成は、たとえばＡｇまたはカーボンを含むペーストを塗布した後に、たとえば乾燥などの手法によってこのペーストを硬化させることによって行う。 Next, as shown in FIG. 134, the bypass conductive portion 5 is formed. The bypass conductive portion 5 is formed by, for example, applying a paste containing Ag or carbon and then curing the paste by a technique such as drying.
　次いで、第１導電膜１０にパターニングを施す。このパターニングは、たとえば濃塩酸と濃硝酸とが３：１の比率で混合された王水を用いて行う。このパターニングにより、第１導電膜１０のうちバイパス導電部５や保護樹脂層４５から露出した部分が選択的に除去される。この結果、第３端縁１０１等を有する第１導電層１が形成される。以上の工程を経ることにより、有機薄膜太陽電池モジュールＡ１３が得られる。有機薄膜太陽電池モジュールＡ１４の製造も同様に行うことができる。 Next, the first conductive film 10 is patterned. This patterning is performed, for example, using aqua regia in which concentrated hydrochloric acid and concentrated nitric acid are mixed at a ratio of 3: 1. By this patterning, portions of the first conductive film 10 exposed from the bypass conductive portion 5 and the protective resin layer 45 are selectively removed. As a result, the first conductive layer 1 having the third edge 101 and the like is formed. By passing through the above process, organic thin-film solar cell module A13 is obtained. The organic thin film solar cell module A14 can be manufactured in the same manner.
　次に、有機薄膜太陽電池モジュールＡ１３および電子機器Ｂ１３の作用について説明する。 Next, the operation of the organic thin film solar cell module A13 and the electronic device B13 will be described.
　本実施形態によれば、第２端縁４５１および第２外方端縁４５２に隣接する領域において支持基板４１が露出している。この部位には、パッシベーション層４２や保護樹脂層４５が形成されていない。したがって、この部位をより透明に仕上げることが可能であり、表示部７０２をより鮮明に外観に表すことができる。 According to the present embodiment, the support substrate 41 is exposed in a region adjacent to the second end edge 451 and the second outer end edge 452. In this portion, the passivation layer 42 and the protective resin layer 45 are not formed. Therefore, it is possible to finish this portion more transparent, and the display portion 702 can be expressed more clearly.
　第２端縁４５１および第１端縁４２１に隣接する領域のうちバスバー部５１によって覆われた僅かな領域を除いて、支持基板４１には第１導電層１が形成されていない。第１導電層１は、ＩＴＯからなるものの、光線のあたり具合によっては、うっすらと着色されたものとして視認される。本実施形態においては、表示部７０２を外観に表すための領域をことさらに透明に仕上げることが可能であり、より美麗な外観を実現することができる。 The first conductive layer 1 is not formed on the support substrate 41 except for a small area covered with the bus bar portion 51 among the areas adjacent to the second edge 451 and the first edge 421. Although the first conductive layer 1 is made of ITO, the first conductive layer 1 is visually recognized as being slightly colored depending on how light hits. In the present embodiment, it is possible to finish the region for displaying the display unit 702 in an even more transparent manner, and a more beautiful appearance can be realized.
　光電変換層３の第５内方退避端縁３０１および第２導電層２の第４内方退避端縁２０１が、第１端縁４２１および第２端縁４５１と離間していることにより、第２導電層２および光電変換層３がバイパス導電部５と不当に導通することを回避することができる。また、第４内方退避端縁２０１および第５内方退避端縁３０１と第１端縁４２１および第２端縁４５１との間にパッシベーション層４２が介在していることにより、第２導電層２および光電変換層３とバイパス導電部５のバスバー部５１とがショートすることをより確実に防止可能である。 The fifth inward retracting edge 301 of the photoelectric conversion layer 3 and the fourth inward retracting edge 201 of the second conductive layer 2 are separated from the first end edge 421 and the second end edge 451, thereby The two conductive layers 2 and the photoelectric conversion layer 3 can be prevented from being unduly conducted with the bypass conductive portion 5. Further, since the passivation layer 42 is interposed between the fourth inner retracting edge 201 and the fifth inner retracting edge 301 and the first end edge 421 and the second end edge 451, the second conductive layer 2 and the photoelectric conversion layer 3 and the bus bar portion 51 of the bypass conductive portion 5 can be more reliably prevented from short-circuiting.
　保護樹脂層４５をマスクとして用いたパターニングを絶縁膜４２０に施すことにより、保護樹脂層４５と同形状のパッシベーション層４２を形成することができる。すなわち、紫外線硬化樹脂などの形状形成に優れた材質を用いて保護樹脂層４５を形成すれば、必ずしも形状形成に優れていない材質からなるパッシベーション層４２を所望の形状に仕上げることができる。なお、保護樹脂層４５は、パッシベーション層４２を形成した後に除去してもよい。ただし、保護樹脂層４５を残存させた場合、水分やパーティクル等の第１導電層１、第２導電層２および光電変換層３等への侵入を防止する効果や、有機薄膜太陽電池モジュールＡ１３の強度向上を図る効果が期待できる。 The passivation layer 42 having the same shape as the protective resin layer 45 can be formed by patterning the insulating film 420 using the protective resin layer 45 as a mask. That is, if the protective resin layer 45 is formed using a material excellent in shape formation such as an ultraviolet curable resin, the passivation layer 42 made of a material not necessarily excellent in shape formation can be finished in a desired shape. The protective resin layer 45 may be removed after the passivation layer 42 is formed. However, when the protective resin layer 45 is left, the effect of preventing intrusion of moisture and particles into the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3 and the like, and the organic thin film solar cell module A13 The effect of improving strength can be expected.
　バイパス導電部５を設けることにより、第１導電層１に拡散してきた正孔を、バスバー部５１を経由して集極部５３へと導くことができる。バイパス導電部５は、第１導電層１よりも低抵抗であるため、電力が熱に変換されてしまうことを抑制することができる。これは、有機薄膜太陽電池モジュールＡ１３および有機薄膜太陽電池モジュールＡ１４の発電損失を低減するとともに、より大面積の発電領域３１による発電に適している。 By providing the bypass conductive portion 5, the holes diffused in the first conductive layer 1 can be guided to the collector portion 53 via the bus bar portion 51. Since the bypass conductive portion 5 has a lower resistance than the first conductive layer 1, it is possible to prevent power from being converted into heat. This reduces power generation loss of the organic thin film solar cell module A13 and the organic thin film solar cell module A14, and is suitable for power generation by the power generation region 31 having a larger area.
　バイパス導電部５を形成した後に第１導電層１にパターニングを施すことにより、バイパス導電部５の連絡部５２は、第１導電層１の端面ではなく、第１導電層１のうち平面視において有意な面積を有する部分（延出部１０３など）に接する構成となる。これは、第１導電層１とバイパス導電部５との接触抵抗を低下させるとともに、確実な導通に有利である。 By patterning the first conductive layer 1 after forming the bypass conductive portion 5, the connecting portion 52 of the bypass conductive portion 5 is not an end face of the first conductive layer 1 but in a plan view of the first conductive layer 1. The structure is in contact with a portion having a significant area (such as the extension 103). This is advantageous for reliable conduction while lowering the contact resistance between the first conductive layer 1 and the bypass conductive portion 5.
　図１３５～図１４５は、本発明の変形例および他の実施形態を示している。なお、これらの図において、上記実施形態と同一または類似の要素には、上記実施形態と同一の符号を付しており、適宜説明を省略する。 135 to 145 show a modification and other embodiments of the present invention. In these drawings, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment, and description thereof will be omitted as appropriate.
　図１３５は、電子機器Ｂ１３および有機薄膜太陽電池モジュールＡ１３の変形例を示している。本変形例においては、第１導電層１の第３端縁１０１が平面視において第１端縁４２１および第２端縁４５１と一致している。また、上述した例における内側のバスバー部５１は設けられていない。このような変形例は、保護樹脂層４５をマスクとして王水を用いたパターニングを上述した第１導電膜１０に施すことによって形成される。 FIG. 135 shows a modification of the electronic device B13 and the organic thin film solar cell module A13. In this modification, the third edge 101 of the first conductive layer 1 coincides with the first edge 421 and the second edge 451 in plan view. Further, the inner bus bar portion 51 in the above-described example is not provided. Such a modification is formed by applying patterning using aqua regia to the first conductive film 10 described above using the protective resin layer 45 as a mask.
　本変形例によっても、第１端縁４２１および第２端縁４５１に隣接する部位をより透明に仕上げることが可能であり、表示部７０２をより鮮明に外観に表すことができる。 Also according to this modification, it is possible to finish the portions adjacent to the first edge 421 and the second edge 451 more transparent, and the display portion 702 can be expressed more clearly.
　図１３６は、電子機器Ｂ１３および有機薄膜太陽電池モジュールＡ１３の変形例を示している。本変形例においては、第１導電層１は、第３端縁１０１に代えて、第３内方退避端縁１０２を有している。第３内方退避端縁１０２は、平面視において第１端縁４２１および第２端縁４５１よりも内方に退避している。また、上述した例における内側のバスバー部５１は設けられていない。このような変形例は、支持基板４１に第１導電膜１０を積層した後に、スリット１９等とともに第３内方退避端縁１０２を形成しておくことによって製造される。 FIG. 136 shows a modification of the electronic device B13 and the organic thin film solar cell module A13. In the present modification, the first conductive layer 1 has a third inward retracting edge 102 instead of the third end edge 101. The third inward retracting edge 102 is retracted inward from the first end edge 421 and the second end edge 451 in a plan view. Further, the inner bus bar portion 51 in the above-described example is not provided. Such a modification is manufactured by forming the third inward retracting edge 102 together with the slit 19 and the like after laminating the first conductive film 10 on the support substrate 41.
　本変形例によっても、第１端縁４２１および第２端縁４５１に隣接する部位をより透明に仕上げることが可能であり、表示部７０２をより鮮明に外観に表すことができる。 Also according to this modification, it is possible to finish the portions adjacent to the first edge 421 and the second edge 451 more transparent, and the display portion 702 can be expressed more clearly.
　図１３７～図１３９は、本発明の第１５実施形態に基づく有機薄膜太陽電池モジュールを示している。本実施形態の有機薄膜太陽電池モジュールＡ１５は、第１導電層１、第２導電層２、光電変換層３、支持基板４１、パッシベーション層４２、保護樹脂層４５およびバイパス導電部５を備えている。有機薄膜太陽電池モジュールＡ１５の平面視形状は特に限定されず、図示された例は、上述した有機薄膜太陽電池モジュールＡ１３と同様の平面視形状である場合の例である。図１３７は、有機薄膜太陽電池モジュールＡ１３における図１１６に相当する要部拡大断面図である。図１３８は、有機薄膜太陽電池モジュールＡ１５の保護樹脂層およびバイパス導電部を示す要部平面図である。図１３９は、保護樹脂層４５およびバイパス導電部５を省略した要部拡大平面図である。 FIGS. 137 to 139 show an organic thin film solar cell module according to a fifteenth embodiment of the present invention. The organic thin-film solar cell module A15 of this embodiment includes a first conductive layer 1, a second conductive layer 2, a photoelectric conversion layer 3, a support substrate 41, a passivation layer 42, a protective resin layer 45, and a bypass conductive portion 5. . The planar view shape of the organic thin film solar cell module A15 is not particularly limited, and the illustrated example is an example in the case of the same planar view shape as the organic thin film solar cell module A13 described above. FIG. 137 is an enlarged cross-sectional view of a main part corresponding to FIG. 116 in the organic thin film solar cell module A13. FIG. 138 is a plan view of relevant parts showing the protective resin layer and the bypass conductive portion of the organic thin-film solar cell module A15. FIG. 139 is an enlarged plan view of a main part in which the protective resin layer 45 and the bypass conductive portion 5 are omitted.
　本実施形態のパッシベーション層４２の第１端縁４２１および第１外方端縁４２２は、図１３７に示すように、凹凸形状の端面となっている。また、第１端縁４２１は全体として、支持基板４１の厚さ方向において支持基板４１から離間するほど平面視において第３端縁１０１から離間する向きに傾いている。また、第１外方端縁４２２は全体として、支持基板４１の厚さ方向において支持基板４１から離間するほど第１導電層１の延出部１０３から離間する向きに傾いている。また、本実施形態の第１端縁４２１は、図１３９に示すように、平面視において第３端縁１０１から離間した非直線状の形状である。第１端縁４２１は、たとえば複数の折れ線や曲線が結合された形状である。第１外方端縁４２２も同様に、平面視において被直線状の形状である。 As shown in FIG. 137, the first edge 421 and the first outer edge 422 of the passivation layer 42 of the present embodiment are uneven end faces. Further, as a whole, the first edge 421 is inclined in a direction away from the third edge 101 in plan view as the distance from the support substrate 41 in the thickness direction of the support substrate 41 is increased. Further, the first outer end edge 422 as a whole is inclined in a direction away from the extending portion 103 of the first conductive layer 1 as it is separated from the support substrate 41 in the thickness direction of the support substrate 41. In addition, as shown in FIG. 139, the first end edge 421 of the present embodiment has a non-linear shape separated from the third end edge 101 in plan view. The first end edge 421 has, for example, a shape in which a plurality of broken lines and curves are combined. Similarly, the first outer end edge 422 has a linear shape in plan view.
　バイパス導電部５は、２つのバスバー部５１および連絡部５２を有する。バイパス導電部５は、第１導電層１よりも低抵抗な材質からなり、たとえばＡｇまたはカーボンを含む。 The bypass conductive part 5 has two bus bar parts 51 and a connecting part 52. The bypass conductive portion 5 is made of a material having a resistance lower than that of the first conductive layer 1 and contains, for example, Ag or carbon.
　１つのバスバー部５１は、パッシベーション層４２の第１端縁４２１を全長にわたって覆っている。このバスバー部５１は、第１導電層１のうち第３端縁１０１と第１端縁４２１との間に位置する部分を覆っている。また、このバスバー部５１の内端縁は、平面視において第３端縁１０１からはみ出している。これにより、このバスバー部５１は、支持基板４１に直接接している。他方のバスバー部５１は、パッシベーション層４２の第１外方端縁４２２を全長にわたって覆っている。このバスバー部５１は、第１導電層１の延出部１０３を覆っている。また、このバスバー部５１は、支持基板４１に直接接している。このような構成により、２つのバスバー部５１は、それぞれが第１導電層１と導通している。 One bus bar portion 51 covers the first edge 421 of the passivation layer 42 over the entire length. The bus bar portion 51 covers a portion of the first conductive layer 1 located between the third end edge 101 and the first end edge 421. Further, the inner end edge of the bus bar portion 51 protrudes from the third end edge 101 in plan view. Accordingly, the bus bar portion 51 is in direct contact with the support substrate 41. The other bus bar portion 51 covers the first outer end edge 422 of the passivation layer 42 over the entire length. The bus bar portion 51 covers the extending portion 103 of the first conductive layer 1. The bus bar portion 51 is in direct contact with the support substrate 41. With such a configuration, each of the two bus bar portions 51 is electrically connected to the first conductive layer 1.
　連絡部５２は、パッシベーション層４２の表面４２３上に形成された部分である。連絡部５２は、たとえば２つのバスバー部５１同士や、バイパス導電部５のうちバスバー部５１および連絡部５２以外の部位とバスバー部５１を連結している。 The connecting part 52 is a part formed on the surface 423 of the passivation layer 42. The connection part 52 connects the bus bar part 51 to parts other than the bus bar part 51 and the connection part 52 of the two bus bar parts 51 or the bypass conductive part 5, for example.
　保護樹脂層４５は、図１３７および図１３８に示すように、パッシベーション層４２およびバイパス導電部５を覆っており、たとえば紫外線硬化樹脂からなる。また、保護樹脂層４５は、有機薄膜太陽電池モジュールＡ１５と上述した表示部７０２とを接合するための透明な接合層を兼ねていてもよい。図示された例においては、保護樹脂層４５の第２端縁４５１および第２外方端縁４５２は、平面視においてパッシベーション層４２の表面４２３のうちバスバー部５１から露出した部分から延びて、パッシベーション層４２の第１端縁４２１および第１外方端縁４２２とバイパス導電部５とを超えている。これにより、保護樹脂層４５は、支持基板４１に直接接する部分を有する。また、保護樹脂層４５は、パッシベーション層４２の表面４２３のうちバイパス導電部５から露出した部分と密着している。 As shown in FIGS. 137 and 138, the protective resin layer 45 covers the passivation layer 42 and the bypass conductive portion 5, and is made of, for example, an ultraviolet curable resin. The protective resin layer 45 may also serve as a transparent bonding layer for bonding the organic thin film solar cell module A15 and the display unit 702 described above. In the illustrated example, the second end edge 451 and the second outer end edge 452 of the protective resin layer 45 extend from a portion of the surface 423 of the passivation layer 42 exposed from the bus bar portion 51 in a plan view, and passivated. It exceeds the first edge 421 and the first outer edge 422 of the layer 42 and the bypass conductive portion 5. Thereby, the protective resin layer 45 has a portion that directly contacts the support substrate 41. Further, the protective resin layer 45 is in close contact with a portion of the surface 423 of the passivation layer 42 exposed from the bypass conductive portion 5.
　次に、有機薄膜太陽電池モジュールＡ１５の製造方法の一例について以下に説明する。なお、以下の説明において参照する図においては、理解の便宜上、図１３７とは、天地逆に表されている。 Next, an example of a manufacturing method of the organic thin film solar cell module A15 will be described below. In the drawings referred to in the following description, FIG. 137 is shown upside down for convenience of understanding.
　まず、図１２７に示した支持基板４１を用意する。そして、図１２８に示したように、支持基板４１の片面にたとえばスパッタ法などの一般的な手法によりＩＴＯからなる第１導電膜１０を積層する。次いで、図１２９に示したように光電変換層３を形成し、図１３０に示したように第２導電層２を形成する。 First, the support substrate 41 shown in FIG. 127 is prepared. Then, as shown in FIG. 128, the first conductive film 10 made of ITO is laminated on one surface of the support substrate 41 by a general method such as sputtering. Next, the photoelectric conversion layer 3 is formed as shown in FIG. 129, and the second conductive layer 2 is formed as shown in FIG.
　次に図１４０に示すように、レーザー光Ｌｚ１を用いたレーザパターニングを用いた手法によって、第１導電膜１０にパターニングを施す。これにより、第１導電膜１０には、スリット１９１およびスリット１９２が形成される。レーザー光Ｌｚ１は、第１導電膜１０をレーザパターニング可能なものであれば特に限定されず、たとえばＩＲレーザー光を用いることができる。スリット１９１を構成する第１導電膜１０の端縁のうち図示された第２導電層２および光電変換層３側に位置するものは、第３端縁１０１となる。また、第１導電膜１０のうちスリット１９２と光電変換層３の第５外方退避端縁３０２との間の部分は、延出部１０３となる。 Next, as shown in FIG. 140, the first conductive film 10 is patterned by a technique using laser patterning using laser light Lz1. Thereby, a slit 191 and a slit 192 are formed in the first conductive film 10. The laser beam Lz1 is not particularly limited as long as the first conductive film 10 can be subjected to laser patterning. For example, an IR laser beam can be used. Of the edges of the first conductive film 10 constituting the slit 191, the one located on the second conductive layer 2 and the photoelectric conversion layer 3 side shown is the third edge 101. In addition, a portion of the first conductive film 10 between the slit 192 and the fifth outer retraction edge 302 of the photoelectric conversion layer 3 becomes an extension portion 103.
　なお、光電変換層３の形成に先立って、第１導電膜１０にスリット１９１およびスリット１９２を形成するためのパターニングを施してもよい。当該パターニングに用いられる手法としては、たとえばウエットエッチングを用いた手法、酸素プラズマエッチングを用いた手法等が適宜採用される。また、第１導電膜１０は、上記に限られず、たとえばナノインプリントを用いた手法によって、支持基板４１上に直接的にＩＴＯをパターニングすることで形成するようにしても良い。 Prior to the formation of the photoelectric conversion layer 3, patterning for forming the slit 191 and the slit 192 in the first conductive film 10 may be performed. As a technique used for the patterning, for example, a technique using wet etching, a technique using oxygen plasma etching, or the like is appropriately employed. The first conductive film 10 is not limited to the above, and may be formed by patterning ITO directly on the support substrate 41 by, for example, a technique using nanoimprint.
　次いで、図１４１に示すように、絶縁膜４２０を形成する。絶縁膜４２０の形成は、たとえばプラズマＣＶＤ法によってＳｉＮまたはＳｉＯＮなどの膜を支持基板４１、第１導電膜１０、光電変換層３および第２導電層２上に形成することにより行う。 Next, as shown in FIG. 141, an insulating film 420 is formed. The insulating film 420 is formed by forming a film such as SiN or SiON on the support substrate 41, the first conductive film 10, the photoelectric conversion layer 3, and the second conductive layer 2 by, for example, plasma CVD.
　次いで、絶縁膜４２０を部分的に除去することによる第１端縁４２１を有するパッシベーション層４２の形成および第１導電膜１０の部分的な除去による第１導電層１の形成を含み、第１端縁４２１に隣接する領域において支持基板４１を露出させる工程を行う。本実施形態においては、支持基板４１を露出させる工程は、図１４２に示すように、絶縁膜４２０を透して第１導電膜１０にレーザー光Ｌｚ２を照射することにより、第１導電膜１０および絶縁膜４２０を部分的に除去する処理を含む。同図において、第１導電膜１０のうち相対的に濃い複数の離散点からなるハッチングが付された部分は、レーザー光Ｌｚ２が照射される部分を表している。また、絶縁膜４２０のうち相対的に薄い複数の離散点からなるハッチングが付された部分は、レーザー光Ｌｚ２の照射に起因して除去される部分を表している。なお、レーザー光Ｌｚ２を用いた手法に限定されず、たとえばエッチングを用いた手法を選択してもよい。 Then, forming the passivation layer 42 having the first edge 421 by partially removing the insulating film 420 and forming the first conductive layer 1 by partially removing the first conductive film 10, A step of exposing the support substrate 41 in a region adjacent to the edge 421 is performed. In the present embodiment, the step of exposing the support substrate 41 is performed by irradiating the first conductive film 10 with the laser light Lz2 through the insulating film 420, as shown in FIG. A process of partially removing the insulating film 420 is included. In the figure, a hatched portion of a plurality of relatively dark discrete points in the first conductive film 10 represents a portion irradiated with the laser light Lz2. In addition, a hatched portion of a plurality of relatively thin discrete points in the insulating film 420 represents a portion that is removed due to irradiation with the laser light Lz2. Note that the method is not limited to the method using the laser beam Lz2, and for example, a method using etching may be selected.
　より具体的には、絶縁膜４２０を透して、第１導電膜１０のうちスリット１９１およびスリット１９２を挟んで図示された第２導電層２および光電変換層３とは反対側に位置する部分に、レーザー光Ｌｚ２を照射する。レーザー光Ｌｚ２としては、たとえば波長が１，０６４ｎｍ程度のＩＲレーザー光が選択される。このレーザー光Ｌｚ２が照射された第１導電膜１０の部分は、顕著なエネルギー投入によって瞬時に揮発する挙動を示す。 More specifically, a portion of the first conductive film 10 that is located on the opposite side of the second conductive layer 2 and the photoelectric conversion layer 3 that are illustrated across the slit 191 and the slit 192 through the insulating film 420. Are irradiated with laser light Lz2. As the laser beam Lz2, for example, an IR laser beam having a wavelength of about 1,064 nm is selected. The portion of the first conductive film 10 irradiated with the laser light Lz2 exhibits a behavior that volatilizes instantaneously when significant energy is applied.
　一方、上述したレーザー光Ｌｚ２の波長は、第１導電膜１０に比べて絶縁膜４２０が吸収しづらいものが選択されている。このため、絶縁膜４２０は、レーザー光Ｌｚ２によって直接に破壊されるものではない。しかし、絶縁膜４２０のうち第１導電膜１０と接する部分は、第１導電膜１０を介して支持基板４１によって支持されている。第１導電膜１０がレーザー光Ｌｚ２の照射によって揮発すると、絶縁膜４２０の一部は、支持基板４１によって支持されないものとなる。また、レーザー光Ｌｚ２が照射された第１導電膜１０の部分（図中において相対的に濃い複数の離散点からなるハッチングが付された部分）に重なっている絶縁膜４２０は、第１導電膜１０が揮発したことによる圧力によってその一部が飛散する。 On the other hand, the wavelength of the laser beam Lz2 described above is selected such that the insulating film 420 is less likely to absorb than the first conductive film 10. For this reason, the insulating film 420 is not directly destroyed by the laser beam Lz2. However, the portion of the insulating film 420 that contacts the first conductive film 10 is supported by the support substrate 41 via the first conductive film 10. When the first conductive film 10 is volatilized by irradiation with the laser beam Lz2, a part of the insulating film 420 is not supported by the support substrate 41. Further, the insulating film 420 overlapping the portion of the first conductive film 10 irradiated with the laser light Lz2 (the hatched portion including a plurality of relatively dark discrete points in the drawing) is the first conductive film. Part of it is scattered by the pressure due to volatilization of 10.
　また、発明者の研究の結果、絶縁膜４２０のうち、レーザー光Ｌｚ２が照射された第１導電膜１０の部分に隣接する部分は、第１導電膜１０の揮発の影響によって飛散することが判明した。図１４２においては、絶縁膜４２０のうちレーザー光Ｌｚ２の照射に起因して飛散する部分を、相対的に薄い複数の離散点からなるハッチングを付している。本実施形態においては、絶縁膜４２０のうち飛散する部分は、スリット１９１およびスリット１９２を超えて、第２導電層２および光電変換層３側に存在する。ただし、第２導電層２および光電変換層３の一部を露出させる程度にパッシベーション層４２が破壊されないように、スリット１９１およびスリット１９２の大きさや位置、およびレーザー光Ｌｚ２の照射範囲や出力等を適宜調節している。この結果、絶縁膜４２０のうちスリット１９１側に位置する端縁が第１端縁４２１となり、スリット１９２側に位置する端縁が第１外方端縁４２２となる。また、第１導電膜１０のうちスリット１９１に隣接する複数の離散点からなるハッチング部分は、レーザー光Ｌｚ２の照射により除去される。このため、第１導電膜１０のうちスリット１９１に対して平面視において光電変換層３側に位置する端縁が、第３端縁１０１となる。また、第１導電膜１０のうちスリット１９２に隣接する複数の離散点からなるハッチング部分は、レーザー光Ｌｚ２の照射により除去される。また、スリット１９２に隣接する絶縁膜４２０の一部がレーザー光Ｌｚ２の照射に伴って飛散することにより、第１導電膜１０のうちスリット１９２に隣接する一部が、パッシベーション層４２０から露出する。この部分が、延出部１０３となる。 As a result of the inventors' research, it has been found that a portion of the insulating film 420 adjacent to the portion of the first conductive film 10 irradiated with the laser light Lz2 is scattered due to the volatility of the first conductive film 10. did. In FIG. 142, the portion of the insulating film 420 that is scattered due to the irradiation of the laser beam Lz2 is hatched with a plurality of relatively thin discrete points. In the present embodiment, the scattered portion of the insulating film 420 exists on the second conductive layer 2 and photoelectric conversion layer 3 side beyond the slit 191 and the slit 192. However, the size and position of the slit 191 and the slit 192 and the irradiation range and output of the laser beam Lz2 are set so that the passivation layer 42 is not destroyed to the extent that the second conductive layer 2 and the photoelectric conversion layer 3 are partially exposed. Adjust as appropriate. As a result, the edge located on the slit 191 side of the insulating film 420 becomes the first edge 421, and the edge located on the slit 192 side becomes the first outer edge 422. Moreover, the hatching part which consists of several discrete points adjacent to the slit 191 among the 1st electrically conductive films 10 is removed by irradiation of the laser beam Lz2. For this reason, the edge located in the photoelectric conversion layer 3 side in planar view with respect to the slit 191 in the first conductive film 10 becomes the third edge 101. Moreover, the hatching part which consists of a some discrete point adjacent to the slit 192 among the 1st electrically conductive films 10 is removed by irradiation of the laser beam Lz2. In addition, a part of the insulating film 420 adjacent to the slit 192 is scattered with the irradiation of the laser light Lz 2, so that a part of the first conductive film 10 adjacent to the slit 192 is exposed from the passivation layer 420. This part becomes the extension part 103.
　以上に述べたレーザー光Ｌｚ２の照射によって、第１導電膜１０および絶縁膜４２０の部分的な除去を行うことにより、図１４３に示すように、第１端縁４２１および第１外方端縁４２２を有するパッシベーション層４２が形成される。また、第１端縁４２１および第１外方端縁４２２から延出する部分を有する第１導電層１が形成される。ものとなり、第３端縁１０１および延出部１０３が形成される。なお、図１４２に示した工程の後に、支持基板４１上に残存した第１導電膜１０等の除去を目的として、たとえば王水を用いた洗浄処理を行ってもよい。 By partially removing the first conductive film 10 and the insulating film 420 by the irradiation with the laser beam Lz2 described above, as shown in FIG. 143, the first edge 421 and the first outer edge 422 are obtained. A passivation layer 42 is formed. Further, the first conductive layer 1 having portions extending from the first end edge 421 and the first outer end edge 422 is formed. As a result, the third end edge 101 and the extending portion 103 are formed. In addition, after the process shown in FIG. 142, for the purpose of removing the first conductive film 10 and the like remaining on the support substrate 41, a cleaning process using aqua regia may be performed, for example.
　次いで、図１４４に示すようにバイパス導電部５を形成する。バイパス導電部５を形成する。バイパス導電部５の形成は、たとえばＡｇまたはカーボンを含むペーストを塗布した後に、たとえば乾燥などの手法によってこのペーストを硬化させることによって行う。バイパス導電部５の形成は、第１導電層１のうちパッシベーション層４２から延出した部分を覆うようにして行う。また、バイパス導電部５は、支持基板４１に直接触れるように形成されることが好ましい。これにより、バスバー部５１および連絡部５２を有するバイパス導電部５が得られる。 Next, the bypass conductive portion 5 is formed as shown in FIG. The bypass conductive portion 5 is formed. The bypass conductive portion 5 is formed by, for example, applying a paste containing Ag or carbon and then curing the paste by a technique such as drying. The bypass conductive portion 5 is formed so as to cover a portion of the first conductive layer 1 extending from the passivation layer 42. The bypass conductive portion 5 is preferably formed so as to directly touch the support substrate 41. Thereby, the bypass conductive part 5 having the bus bar part 51 and the connecting part 52 is obtained.
　この後は、バイパス導電部５およびパッシベーション層４２を覆うように、保護樹脂層４５を形成する。保護樹脂層４５の形成は、たとえば紫外線硬化樹脂を含む液体樹脂材料をスクリーン印刷によってパッシベーション層４２上に塗布し、紫外線を照射することによって硬化させる。以上の工程を経ることにより、図１３７に示す有機薄膜太陽電池モジュールＡ１５が完成する。なお、上述した有機薄膜太陽電池モジュールＡ１３および有機薄膜太陽電池モジュールＡ１４において、バイパス導電部５を覆う保護樹脂層４５をさらに設けてもよい。 Thereafter, a protective resin layer 45 is formed so as to cover the bypass conductive portion 5 and the passivation layer 42. The protective resin layer 45 is formed by, for example, applying a liquid resin material containing an ultraviolet curable resin on the passivation layer 42 by screen printing and irradiating it with ultraviolet rays. Through the above steps, the organic thin film solar cell module A15 shown in FIG. 137 is completed. In the organic thin film solar cell module A13 and the organic thin film solar cell module A14 described above, a protective resin layer 45 that covers the bypass conductive portion 5 may be further provided.
　このような実施形態によっても、第１端縁４２１に隣接する部位をより透明に仕上げることが可能であり、表示部７０２をより鮮明に外観に表すことができる。 Also in such an embodiment, it is possible to finish the portion adjacent to the first edge 421 more transparent, and the display unit 702 can be expressed more clearly.
　また、バイパス導電部５が保護樹脂層４５によって覆われていることにより、バイパス導電部５が外気に曝されることを回避することが可能である。これにより、バイパス導電部５が腐食すること等を抑制可能であり、バイパス導電部５による低抵抗化をより長期間にわたって維持することができる。 Further, since the bypass conductive portion 5 is covered with the protective resin layer 45, it is possible to avoid the bypass conductive portion 5 being exposed to the outside air. Thereby, it can suppress that the bypass conductive part 5 corrodes etc., and low resistance by the bypass conductive part 5 can be maintained over a longer period of time.
　第１端縁４２１および第１外方端縁４２２が、凹凸形状であることにより、第１端縁４２１および第１外方端縁４２２とバイパス導電部５のバスバー部５１との接合強度を高めることが可能である。 Since the first end edge 421 and the first outer end edge 422 are uneven, the bonding strength between the first end edge 421 and the first outer end edge 422 and the bus bar portion 51 of the bypass conductive portion 5 is increased. It is possible.
　図１４２に示したように、第１導電層１にレーザー光Ｌｚ２を照射することによって生じる第１導電層１の揮発を利用して、パッシベーション層４２を除去している。このため、パッシベーション層４２を除去するための専用のレーザー光や薬剤等は不要である。これは、製造コストの低減や制造時間の短縮に好ましい。レーザー光Ｌｚ２としてＩＲレーザー光を用いることにより、絶縁膜４２０を透過して第１導電膜１０へとレーザー光Ｌｚ２を効率よく照射することが可能である。また、レーザー光Ｌｚ２としてＩＲレーザー光を用いることにより、パッシベーション層４２の第１端縁４２１および第１外方端縁４２２を凹凸形状に仕上げることができるという利点がある。なお、絶縁膜４２０の材質の一例であるＳｉＮは、４００ｎｍより長波長の光を透過させる。このため、絶縁膜４２０がＳｉＮからなる場合、レーザー光Ｌｚ２として波長が５３２ｎｍであるＧｒｅｅｎレーザー光を用いてもよい。一方で、レーザー光Ｌｚ２として波長が３５５ｎｍであるＵＶレーザー光を用いた場合には、絶縁膜４２０と第１導電膜１０とがレーザー光Ｌｚ２を吸収するため、これらを一括して除去することができる。 142, the passivation layer 42 is removed by utilizing volatilization of the first conductive layer 1 generated by irradiating the first conductive layer 1 with the laser light Lz2. Therefore, there is no need for a dedicated laser beam or drug for removing the passivation layer 42. This is preferable for reducing manufacturing costs and manufacturing time. By using IR laser light as the laser light Lz2, it is possible to efficiently irradiate the first conductive film 10 with the laser light Lz2 through the insulating film 420. Further, by using IR laser light as the laser light Lz2, there is an advantage that the first edge 421 and the first outer edge 422 of the passivation layer 42 can be finished in an uneven shape. Note that SiN, which is an example of the material of the insulating film 420, transmits light having a wavelength longer than 400 nm. For this reason, when the insulating film 420 is made of SiN, Green laser light having a wavelength of 532 nm may be used as the laser light Lz2. On the other hand, when UV laser light having a wavelength of 355 nm is used as the laser light Lz2, the insulating film 420 and the first conductive film 10 absorb the laser light Lz2, and therefore these can be removed at once. it can.
　パッシベーション層４２および第１導電層１の部分的な除去は、レーザー光Ｌｚ２を用いて行う。レーザー光Ｌｚ２は、照射する領域をより正確に制御することが可能である。したがって、パッシベーション層４２および第１導電層１のうち所望の箇所を除去するのに適している。 The partial removal of the passivation layer 42 and the first conductive layer 1 is performed using a laser beam Lz2. The laser light Lz2 can control the irradiation region more accurately. Therefore, it is suitable for removing a desired portion of the passivation layer 42 and the first conductive layer 1.
　第１導電層１のうちレーザー光Ｌｚ２が照射された領域に隣接するパッシベーション層４２が破壊される挙動を利用する。これにより、図１４３においてパッシベーション層４２から露出する第１導電層１の部分は、レーザー光Ｌｚ２が照射されていないにもかかわらず、当該部分を覆っていたパッシベーション層４２の部分が除去されている。このため、第１導電層１のちパッシベーション層４２から露出する部分を不当に破壊することを回避しつつ、パッシベーション層４２を適切に除去することができる。 The behavior that the passivation layer 42 adjacent to the region irradiated with the laser beam Lz2 in the first conductive layer 1 is destroyed is used. As a result, the portion of the first conductive layer 1 exposed from the passivation layer 42 in FIG. 143 is removed even though the portion of the passivation layer 42 covering the portion is not irradiated with the laser beam Lz2. . For this reason, the passivation layer 42 can be appropriately removed while avoiding undue destruction of the portion exposed from the passivation layer 42 after the first conductive layer 1.
　第１導電層１にスリット１９１およびスリット１９２を設けておくことにより、第１導電層１の揮発の影響を受けるパッシベーション層４２の領域が、不当に広域にわたってしまうことを回避することが可能である。また、スリット１９１およびスリット１９２を設けておくことにより、図１４２および図１４３に示した第１導電膜１０を部分的に除去する工程において、除去されるべき領域に第１導電膜１０の一部が残存したとしても、この残存部分と第１導電層１とが意図せず導通してしまうことを回避することができる。また、第１導電膜１０のうちスリット１９２を挟んで光電変換層３とは反対側に位置する部分は、除去されることなく、有機薄膜太陽電池モジュールＡ１５の一部として残存してもよい。この部分は、スリット１９２が設けられていることにより、第１導電層１と導通することが防止されている。また、この部分の除去を省略すれば、製造時間を短縮することができる。なお、スリット１９１およびスリット１９２を設ける構成は好適例であり、これらを設けない構成であってもよい。 By providing the slit 191 and the slit 192 in the first conductive layer 1, it is possible to avoid that the region of the passivation layer 42 affected by the volatilization of the first conductive layer 1 is unreasonably spread over a wide area. . Further, by providing the slit 191 and the slit 192, in the step of partially removing the first conductive film 10 shown in FIGS. 142 and 143, a part of the first conductive film 10 is formed in the region to be removed. Even if this remains, it can be avoided that the remaining portion and the first conductive layer 1 are unintentionally conducted. Moreover, the part located in the other side of the photoelectric converting layer 3 across the slit 192 among the 1st electrically conductive films 10 may remain | survive as a part of organic thin-film solar cell module A15, without removing. This portion is prevented from conducting to the first conductive layer 1 by providing the slit 192. Further, if the removal of this portion is omitted, the manufacturing time can be shortened. In addition, the structure which provides the slit 191 and the slit 192 is a suitable example, and the structure which does not provide these may be sufficient.
　図１４５は、有機薄膜太陽電池モジュールＡ１５の変形例を示している。本変形例においては、保護樹脂層４５は、非透光部４５４および透光部４５５を有する。非透光部４５４は、平面視においてバイパス導電部５と重なり、且つ第１端縁４２１よりも第１外方端縁４２２側の領域に設けられている。非透光部４５４は、非透光の材質からなり、たとえば白色の樹脂からなる。透光部４５５は、第１端縁４２１に対して第１外方端縁４２２とは反対側に位置する領域を含む領域に設けられている。図示された例においては、透光部４５５は、図中右方のバスバー部５１を跨ぐようにして形成されている。また、透光部４５５は、その一部が支持基板４１に接している。本変形例によっても、バイパス導電部５を保護することができる。また、非透光部４５４を有することにより、紫外線等の光を受けることによってバイパス導電部５が劣化すること等を抑制することができる。 FIG. 145 shows a modification of the organic thin film solar cell module A15. In this modification, the protective resin layer 45 has a non-light-transmitting part 454 and a light-transmitting part 455. The non-light-transmissive portion 454 overlaps the bypass conductive portion 5 in a plan view and is provided in a region closer to the first outer end edge 422 than the first end edge 421. The non-translucent portion 454 is made of a non-translucent material, for example, white resin. The translucent portion 455 is provided in a region including a region located on the opposite side to the first outer end edge 422 with respect to the first end edge 421. In the illustrated example, the translucent part 455 is formed so as to straddle the bus bar part 51 on the right side in the drawing. A part of the translucent portion 455 is in contact with the support substrate 41. Also according to this modification, the bypass conductive portion 5 can be protected. Moreover, by having the non-light-transmissive part 454, it can suppress that the bypass conductive part 5 deteriorates by receiving light, such as an ultraviolet-ray.
　本発明に係る有機薄膜太陽電池モジュール、電子機器、有機薄膜太陽電池モジュールの製造方法は、上述した実施形態に限定されるものではない。本発明に係る有機薄膜太陽電池モジュール、電子機器、有機薄膜太陽電池モジュールの製造方法の具体的な構成は、種々に設計変更自在である。 The manufacturing method of the organic thin film solar cell module, the electronic device, and the organic thin film solar cell module according to the present invention is not limited to the above-described embodiment. The specific configuration of the organic thin film solar cell module, the electronic device, and the method of manufacturing the organic thin film solar cell module according to the present invention can be varied in design in various ways.
　本発明に係る電子機器は、携帯型電話端末をはじめ、太陽光発電を利用可能な様々な電子機器に適用することが可能であり、たとえば腕時計、電子計算機などが挙げられる。 The electronic device according to the present invention can be applied to various electronic devices that can use solar power generation, such as a portable telephone terminal, and examples thereof include a wrist watch and an electronic calculator.
　以下に、本発明の技術的特徴について付記する。 The technical features of the present invention will be described below.
　　〔付記１Ｄ〕
　透明な支持基板と、
　前記支持基板に積層された透明な第１導電層と、
　第２導電層と、
　前記第１導電層および前記第２導電層に挟まれた有機薄膜からなる光電変換層と、
　前記第２導電層を覆うパッシベーション層と、
を備え、
　前記パッシベーション層は、第１端縁を有し、
　前記第１端縁に隣接する領域において、前記支持基板が露出している、有機薄膜太陽電池モジュール。
　　〔付記２Ｄ〕
　前記第１導電層は、平面視において前記第１端縁と一致する第３端縁を有する、付記１Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記３Ｄ〕
　前記第１導電層は、平面視において前記第１端縁よりも内方に退避した第３内方退避端縁を有する、付記１Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記４Ｄ〕
　前記第２導電層は、平面視において前記第１端縁よりも内方に退避した第４内方退避端縁を有する、付記２Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記５Ｄ〕
　前記光電変換層は、平面視において前記第１端縁よりも内方に退避した第５内方退避端縁を有する、付記４Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記６Ｄ〕
　前記第４内方退避端縁は、平面視において前記第５内方退避端縁よりも内方に退避している、付記５Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記７Ｄ〕
　前記第１端縁は、平面視環状である、付記４Ｄないし６Ｄのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記８Ｄ〕
　前記第３端縁は、平面視環状である、付記７Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記９Ｄ〕
　前記第３内方退避端縁は、平面視環状である、付記３Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記１０Ｄ〕
　前記第４内方退避端縁は、平面視環状である、付記８Ｄまたは９Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記１１Ｄ〕
　前記第５内方退避端縁は、平面視環状である、付記１０Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記１２Ｄ〕
　前記第１導電層は、ＩＴＯからなる、付記１Ｄないし１１Ｄのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１３Ｄ〕
　前記第２導電層は、金属からなる、付記１Ｄないし１２Ｄのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１４Ｄ〕
　前記第２導電層は、Ａｌからなる、付記１３Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記１５Ｄ〕
　前記パッシベーション層は、ＳｉＮからなる、付記１Ｄないし１４Ｄのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１６Ｄ〕
　前記パッシベーション層を覆う保護樹脂層を備えており、
　前記保護樹脂層は、平面視において前記第１端縁と一致する第２端縁を有する、付記１Ｄないし１５Ｄのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１７Ｄ〕
　前記第２端縁と前記第１端縁とは、連続した面をなす、付記１６Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記１８Ｄ〕
　前記第２端縁は、平面視環状である、付記１６Ｄまたは１７Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記１９Ｄ〕
　前記保護樹脂層は、紫外線硬化樹脂からなる、付記１６Ｄないし１８Ｄのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２０Ｄ〕
　前記保護樹脂層は、平面視において前記光電変換層の少なくとも一部を挟んで前記第２端縁と反対側に位置する第２外方端縁を有し、
　前記パッシベーション層は、平面視において前記第２外方端縁と一致する第１外方端縁を有し、
　前記第１導電層は、前記第２外方端縁および前記第１外方端縁から外方に延出する延出部を有し、
　前記延出部の少なくとも一部を覆い、且つ前記第１導電層の材料よりも低抵抗の材料からなるバイパス導電部を備える、付記１６Ｄないし１９Ｄのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２１Ｄ〕
　前記第２外方端縁と前記第１外方端縁とは、連続した面をなす、付記２０Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記２２Ｄ〕
　前記バイパス導電部は、前記第２外方端縁および前記第１外方端縁を覆う、付記２０Ｄまたは２１Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記２３Ｄ〕
　前記バイパス導電部は、Ａｇまたはカーボンを含む、付記２０Ｄないし２２Ｄのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２４Ｄ〕
　前記パッシベーション層は、平面視において前記光電変換層の少なくとも一部を挟んで前記第１端縁と反対側に位置する第１外方端縁を有し、
　前記第１導電層は、前記第１外方端縁から外方に延出する延出部を有し、
　前記延出部の少なくとも一部を覆い、且つ前記第１導電層の材料よりも低抵抗の材料からなるバイパス導電部と、
　前記バイパス導電部を覆う保護樹脂層と、を備える、付記１Ｄないし１５Ｄのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２５Ｄ〕
　前記バイパス導電部は、前記第１外方端縁を覆う、付記２４Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記２６Ｄ〕
　前記バイパス導電部は、Ａｇまたはカーボンを含む、付記２４Ｄまたは２５Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記２７Ｄ〕
　前記保護樹脂層は、平面視において前記バイパス導電部と重なり、且つ前記第１端縁よりも前記第１外方端縁側の領域に設けられた非透光部を含む、付記２４Ｄないし２６Ｄのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２８Ｄ〕
　前記非透光部は、白色である、付記２７Ｄに記載の有機薄膜太陽電池モジュール。
　　〔付記２９Ｄ〕
　前記第２導電層は、平面視において前記第２外方端縁および前記第１外方端縁よりも内方に退避した第４外方退避端縁を有する、付記２０Ｄないし２８Ｄのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記３０Ｄ〕
　前記光電変換層は、平面視において前記第２外方端縁および前記第１外方端縁よりも内方に退避した第５外方退避端縁を有する、付記２０Ｄないし２９Ｄのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記３１Ｄ〕
　付記１Ｄないし３０Ｄのいずれかに記載の有機薄膜太陽電池モジュールと、
　前記有機薄膜太陽電池モジュールからの給電によって駆動する駆動部と、
を備える、電子機器。
　　〔付記３２Ｄ〕
　透明な支持基板に透明な第１導電膜を積層する工程と、
　前記第１導電膜に有機薄膜からなる光電変換層を積層する工程と、
　前記光電変換層に第２導電層を積層する工程と、
　前記第２導電層を覆う絶縁膜を積層する工程と、
　前記絶縁膜を部分的に除去することによる第１端縁を有するパッシベーション層の形成および前記第１導電膜の部分的な除去による第１導電層の形成を含み、前記第１端縁に隣接する領域において、前記支持基板を露出させる工程と、を備える、有機薄膜太陽電池モジュールの製造方法。
　　〔付記３３Ｄ〕
　前記絶縁膜を形成する工程の後、前記支持基板を露出させる工程の前に、
　前記絶縁膜に第２端縁を有する保護樹脂層を積層する工程を備え、
　前記支持基板を露出させる工程は、
　前記第２端縁を境界として、前記絶縁膜を部分的に除去することにより平面視において前記第２端縁と一致する前記第１端縁を有する前記パッシベーション層を形成する工程と、
　前記第１導電膜のうち前記第１端縁および前記第２端縁から露出する部分除去することにより前記第１導電層を形成する工程と、を含む、付記３２Ｄに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記３４Ｄ〕
　前記支持基板を露出させる工程において、平面視において前記第２端縁および前記第１端縁と一致する第３端縁を有する前記第１導電層を形成する、付記３３Ｄに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記３５Ｄ〕
　前記第２端縁および前記第１端縁は、平面視環状である、付記３４Ｄに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記３６Ｄ〕
　前記第３端縁は、平面視環状である、付記３５Ｄに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記３７Ｄ〕
　前記第１導電層は、ＩＴＯからなる、付記３３Ｄないし３６Ｄのいずれかに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記３８Ｄ〕
　前記第２導電層は、金属からなる、付記３３Ｄないし３７Ｄのいずれかに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記３９Ｄ〕
　前記第２導電層は、Ａｌからなる、付記３８Ｄに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記４０Ｄ〕
　前記パッシベーション層は、ＳｉＮからなる、付記３３Ｄないし３９Ｄのいずれかに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記４１Ｄ〕
　前記保護樹脂層は、紫外線硬化樹脂からなる、付記３３Ｄないし４０Ｄのいずれかに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記４２Ｄ〕
　前記保護樹脂層を積層する工程において、平面視において前記光電変換層の少なくとも一部を挟んで前記第２端縁と反対側に位置する第２外方端縁を形成し、
　前記第２端縁を境界として、前記絶縁膜を部分的に除去することにより平面視において前記第２外方端縁と一致する第１外方端縁を有する前記パッシベーション層に形成する工程と、
　前記第１導電層のうち前記第２外方端縁および前記第１外方端縁から外方に延出する延出部の少なくとも一部を覆い、且つ前記第１導電層の材料よりも低抵抗の材料からなるバイパス導電部を形成する工程と、を備える、付記３３Ｄないし４１Ｄのいずれかに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記４３Ｄ〕
　前記バイパス導電部を形成する工程においては、前記バイパス導電部によって前記第２外方端縁および前記第１外方端縁を覆う、付記４２Ｄに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記４４Ｄ〕
　前記バイパス導電部は、Ａｇまたはカーボンを含む、付記４２Ｄまたは４３Ｄに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記４５Ｄ〕
　前記支持基板を露出させる工程は、前記絶縁膜を透して前記第１導電膜にレーザー光を照射することにより、前記第１導電膜および前記絶縁膜を部分的に除去する処理を含む、付記３２Ｄに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記４６Ｄ〕
　前記支持基板を露出させる工程は、前記部分的に除去する処理により前記絶縁膜のうち平面視において前記レーザー光が照射された領域に隣接する領域が除去されることにより、前記第１導電膜のうち前記レーザー光が照射されていない部分を前記パッシベーション層から露出する延出部とする処理を含み、
　前記延出部の少なくとも一部を覆い、且つ前記第１導電層の材料よりも低抵抗の材料からなるバイパス導電部を形成する工程と、
　前記バイパス導電部を覆う保護樹脂層を形成する工程と、を備える、付記４５Ｄに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記４７Ｄ〕
　前記バイパス導電部は、Ａｇまたはカーボンを含む、付記４６Ｄに記載の有機薄膜太陽電池モジュールの製造方法。
　　〔付記４８Ｄ〕
　前記保護樹脂層を形成する工程においては、平面視において前記バイパス導電部と重なり、且つ前記第１端縁よりも前記第１外方端縁側の領域に非透光部形成する、付記４６Ｄまたは４７Ｄに記載の有機薄膜太陽電池モジュール。 [Appendix 1D]
A transparent support substrate;
A transparent first conductive layer laminated on the support substrate;
A second conductive layer;
A photoelectric conversion layer comprising an organic thin film sandwiched between the first conductive layer and the second conductive layer;
A passivation layer covering the second conductive layer;
With
The passivation layer has a first edge;
The organic thin-film solar cell module in which the support substrate is exposed in a region adjacent to the first edge.
[Appendix 2D]
The organic thin-film solar cell module according to appendix 1D, wherein the first conductive layer has a third edge that coincides with the first edge in plan view.
[Appendix 3D]
The organic thin-film solar cell module according to appendix 1D, wherein the first conductive layer has a third inward retracting edge that is retracted inward from the first end edge in a plan view.
[Appendix 4D]
The said 2nd conductive layer is an organic thin-film solar cell module of Additional remark 2D which has the 4th inward retracting edge retracted | inwarded rather than the said 1st edge in planar view.
[Appendix 5D]
4. The organic thin-film solar cell module according to appendix 4D, wherein the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in a plan view.
[Appendix 6D]
The organic thin-film solar cell module according to appendix 5D, wherein the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
[Appendix 7D]
The organic thin-film solar cell module according to any one of appendices 4D to 6D, wherein the first end edge is annular in plan view.
[Appendix 8D]
The organic thin film solar cell module according to appendix 7D, wherein the third end edge is annular in plan view.
[Appendix 9D]
The organic thin-film solar cell module according to attachment 3D, wherein the third inward retracting edge is annular in plan view.
[Appendix 10D]
The organic thin-film solar cell module according to Supplementary Note 8D or 9D, wherein the fourth inward withdrawal edge is annular in plan view.
[Appendix 11D]
The organic thin-film solar cell module according to Supplementary Note 10D, wherein the fifth inward withdrawal edge is annular in plan view.
[Appendix 12D]
The organic thin-film solar cell module according to any one of appendices 1D to 11D, wherein the first conductive layer is made of ITO.
[Appendix 13D]
The organic thin-film solar cell module according to any one of Supplementary Notes 1D to 12D, wherein the second conductive layer is made of metal.
[Appendix 14D]
The organic thin film solar cell module according to attachment 13D, wherein the second conductive layer is made of Al.
[Appendix 15D]
The organic thin-film solar cell module according to any one of Supplementary Notes 1D to 14D, wherein the passivation layer is made of SiN.
[Appendix 16D]
A protective resin layer covering the passivation layer;
The organic thin-film solar cell module according to any one of Supplementary Notes 1D to 15D, wherein the protective resin layer has a second edge that coincides with the first edge in plan view.
[Appendix 17D]
The organic thin film solar cell module according to appendix 16D, wherein the second edge and the first edge form a continuous surface.
[Appendix 18D]
The organic thin film solar cell module according to appendix 16D or 17D, wherein the second end edge is annular in plan view.
[Appendix 19D]
The organic thin film solar cell module according to any one of appendices 16D to 18D, wherein the protective resin layer is made of an ultraviolet curable resin.
[Appendix 20D]
The protective resin layer has a second outer end edge located on the opposite side of the second end edge across at least a part of the photoelectric conversion layer in plan view;
The passivation layer has a first outer edge that coincides with the second outer edge in plan view,
The first conductive layer has an extension portion extending outward from the second outer end edge and the first outer end edge;
The organic thin-film solar cell module according to any one of supplementary notes 16D to 19D, comprising a bypass conductive portion that covers at least a part of the extension portion and is made of a material having a lower resistance than the material of the first conductive layer.
[Appendix 21D]
The organic thin film solar cell module according to appendix 20D, wherein the second outer edge and the first outer edge form a continuous surface.
[Appendix 22D]
The bypass conductive part is the organic thin-film solar cell module according to appendix 20D or 21D, which covers the second outer edge and the first outer edge.
[Appendix 23D]
The organic thin-film solar cell module according to any one of appendices 20D to 22D, wherein the bypass conductive portion includes Ag or carbon.
[Appendix 24D]
The passivation layer has a first outer end edge located on the opposite side of the first end edge across at least a part of the photoelectric conversion layer in plan view,
The first conductive layer has an extending portion extending outward from the first outer edge,
A bypass conductive portion that covers at least a portion of the extension and is made of a material having a lower resistance than the material of the first conductive layer;
An organic thin-film solar cell module according to any one of Supplementary Notes 1D to 15D, comprising: a protective resin layer that covers the bypass conductive portion.
[Appendix 25D]
The bypass conductive part is the organic thin-film solar cell module according to appendix 24D, which covers the first outer end edge.
[Appendix 26D]
The bypass conductive part is the organic thin-film solar cell module according to appendix 24D or 25D, containing Ag or carbon.
[Appendix 27D]
Any one of appendices 24D to 26D, wherein the protective resin layer includes a non-light-transmitting portion that overlaps the bypass conductive portion in a plan view and is provided in a region closer to the first outer end edge than the first end edge. Organic thin-film solar cell module according to crab.
[Appendix 28D]
The non-light-transmitting portion is an organic thin-film solar cell module according to appendix 27D, which is white.
[Appendix 29D]
The second conductive layer has any one of appendices 20D to 28D having a second outer end edge and a fourth outer retreat end edge retracted inward from the first outer end edge in a plan view. The organic thin film solar cell module described.
[Appendix 30D]
The photoelectric conversion layer according to any one of appendices 20D to 29D, which has a second outer retreat edge and a fifth outer retreat edge that retreats inward from the first outer end edge in a plan view. Organic thin-film solar cell module.
[Supplementary Note 31D]
An organic thin-film solar cell module according to any one of Supplementary Notes 1D to 30D;
A drive unit driven by feeding from the organic thin film solar cell module;
An electronic device.
[Appendix 32D]
Laminating a transparent first conductive film on a transparent support substrate;
Laminating a photoelectric conversion layer made of an organic thin film on the first conductive film;
Laminating a second conductive layer on the photoelectric conversion layer;
Laminating an insulating film covering the second conductive layer;
Including forming a passivation layer having a first edge by partially removing the insulating film and forming a first conductive layer by partially removing the first conductive film, and adjacent to the first edge And a step of exposing the support substrate in the region, and a method of manufacturing an organic thin film solar cell module.
[Appendix 33D]
After the step of forming the insulating film and before the step of exposing the support substrate,
A step of laminating a protective resin layer having a second edge on the insulating film;
The step of exposing the support substrate includes:
Forming the passivation layer having the first edge coincident with the second edge in plan view by partially removing the insulating film with the second edge as a boundary;
Forming the first conductive layer by removing portions of the first conductive film exposed from the first edge and the second edge of the first conductive film, and the organic thin-film solar cell module according to appendix 32D Manufacturing method.
[Appendix 34D]
The organic thin-film solar cell according to appendix 33D, wherein in the step of exposing the support substrate, the first conductive layer having the second end edge and the third end edge that coincides with the first end edge in plan view is formed. Module manufacturing method.
[Appendix 35D]
The method for manufacturing an organic thin-film solar cell module according to Appendix 34D, wherein the second end edge and the first end edge are annular in plan view.
[Appendix 36D]
The method for producing an organic thin-film solar cell module according to Supplementary Note 35D, wherein the third end edge is annular in plan view.
[Appendix 37D]
The method for manufacturing an organic thin-film solar cell module according to any one of appendices 33D to 36D, wherein the first conductive layer is made of ITO.
[Appendix 38D]
The method for manufacturing an organic thin-film solar cell module according to any one of appendices 33D to 37D, wherein the second conductive layer is made of metal.
[Appendix 39D]
The method for manufacturing an organic thin-film solar cell module according to attachment 38D, wherein the second conductive layer is made of Al.
[Appendix 40D]
The method for manufacturing an organic thin-film solar cell module according to any one of appendices 33D to 39D, wherein the passivation layer is made of SiN.
[Appendix 41D]
The method for manufacturing an organic thin-film solar cell module according to any one of Supplementary Notes 33D to 40D, wherein the protective resin layer is made of an ultraviolet curable resin.
[Appendix 42D]
In the step of laminating the protective resin layer, forming a second outer edge located on the opposite side of the second edge with at least a part of the photoelectric conversion layer in plan view,
Forming on the passivation layer having a first outer edge that coincides with the second outer edge in plan view by partially removing the insulating film with the second edge as a boundary;
The first conductive layer covers at least a part of the second outer end edge and an extended portion extending outward from the first outer end edge, and is lower than the material of the first conductive layer. A method of forming an organic thin-film solar cell module according to any one of appendices 33D to 41D.
[Appendix 43D]
In the step of forming the bypass conductive portion, the organic thin-film solar cell module manufacturing method according to appendix 42D, wherein the bypass conductive portion covers the second outer end edge and the first outer end edge.
[Appendix 44D]
The said bypass conductive part is a manufacturing method of the organic thin-film solar cell module of Additional remark 42D or 43D containing Ag or carbon.
[Appendix 45D]
The step of exposing the support substrate includes a process of partially removing the first conductive film and the insulating film by irradiating the first conductive film with laser light through the insulating film. The manufacturing method of the organic thin-film solar cell module as described in 32D.
[Appendix 46D]
The step of exposing the support substrate includes removing the region adjacent to the region irradiated with the laser beam in plan view in the insulating film by the partial removal process. Among them, including a process of setting a portion that is not irradiated with the laser light as an extending portion exposed from the passivation layer,
Forming a bypass conductive portion that covers at least a portion of the extension and is made of a material having a lower resistance than the material of the first conductive layer;
And a step of forming a protective resin layer covering the bypass conductive portion. The method for manufacturing the organic thin-film solar cell module according to appendix 45D.
[Appendix 47D]
The bypass conductive part is a method for manufacturing an organic thin-film solar cell module according to appendix 46D, which includes Ag or carbon.
[Appendix 48D]
In the step of forming the protective resin layer, a non-light-transmitting portion is formed in a region that overlaps the bypass conductive portion in a plan view and is closer to the first outer edge than the first edge. The organic thin film solar cell module according to 1.
［第１６－第１８実施形態］
　第１６ないし第１８実施形態および図１４６～図１８３における符号は、これらの実施形態および図において有効であり、他の実施形態および図における符号とは独立している。ただし、第１６ないし第１８実施形態の具体的構成と他の実施形態の具体的構成とは、相互に適宜組合せ可能である。 [Sixteenth to eighteenth embodiments]
Reference numerals in the sixteenth to eighteenth embodiments and FIGS. 146 to 183 are effective in these embodiments and drawings, and are independent of the reference numerals in the other embodiments and drawings. However, the specific configurations of the sixteenth to eighteenth embodiments and the specific configurations of the other embodiments can be appropriately combined with each other.
　本発明において、「透明」とは、透過率が約５０％以上であるものと定義する。また「透明」とは、可視光線に対して、無色透明という意味でも使用する。可視光線は波長約３６０ｎｍ～８３０ｎｍ程度、エネルギー約３．４５ｅＶ～１．４９ｅＶ程度に相当し、この領域で透過率が５０％以上あれば透明である。 In the present invention, “transparent” is defined as having a transmittance of about 50% or more. “Transparent” is also used to mean colorless and transparent to visible light. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.
　図１４６～図１５１は、本発明の第１６実施形態に基づく電子機器および本発明の第１６実施形態に基づく有機薄膜太陽電池モジュールを示している。本実施形態の電子機器Ｂ１６は、有機薄膜太陽電池モジュールＡ１６、ケース６１、制御部７０１、表示部７０２、入力部７０３、マイク７０４、スピーカ７０５、無線通信部７０６およびバッテリ７０７を備えており、携帯型電話端末として構成されている。 FIGS. 146 to 151 show an electronic device based on the sixteenth embodiment of the present invention and an organic thin-film solar cell module based on the sixteenth embodiment of the present invention. The electronic device B16 of this embodiment includes an organic thin-film solar cell module A16, a case 61, a control unit 701, a display unit 702, an input unit 703, a microphone 704, a speaker 705, a wireless communication unit 706, and a battery 707. Type telephone terminal.
　ケース６１は、電子機器Ｂ１６のその他の構成要素を収容するものであり、金属、樹脂、ガラスなどの材質からなる。 The case 61 accommodates other components of the electronic device B16 and is made of a material such as metal, resin, or glass.
　図１４６は、有機薄膜太陽電池モジュールＡ１６およびこれを用いた電子機器Ｂ１６を示す平面図である。図１４７は、図１４６のＣＸＬＶＩＩ－ＣＸＬＶＩＩ線に沿う模式的な断面図である。図１４８は、有機薄膜太陽電池モジュールＡ１６を示す要部拡大底面図である。図１４９は、図１４８のＣＸＬＩＸ－ＣＸＬＩＸ線に沿う要部拡大断面図である。図１５０は、図１４８のＣＬ－ＣＬ線に沿う要部拡大断面図である。図１５１は、電子機器Ｂ１６を示すシステム構成図である。なお、図１４７においては、理解の便宜上、ケース６１、有機薄膜太陽電池モジュールＡ１６、有機薄膜太陽電池モジュールＡ１７、制御部７０１、表示部７０２およびバッテリ７０７のみを模式的に示している。また、図１４８においては、理解の便宜上、第１導電層１および光電変換層３のみを実践で表しており、バイパス導電部５を想像線で示している。 FIG. 146 is a plan view showing an organic thin-film solar cell module A16 and an electronic device B16 using the same. FIG. 147 is a schematic sectional view taken along line CXLVII-CXLVII in FIG. 146. FIG. 148 is an enlarged bottom view of the main part showing the organic thin film solar cell module A16. FIG. 149 is an enlarged cross-sectional view of a main part taken along line CXLIX-CXLIX in FIG. 150 is an enlarged cross-sectional view of a main part taken along line CL-CL in FIG. FIG. 151 is a system configuration diagram showing the electronic apparatus B16. In FIG. 147, only the case 61, the organic thin film solar cell module A16, the organic thin film solar cell module A17, the control unit 701, the display unit 702, and the battery 707 are schematically shown for the sake of understanding. In FIG. 148, for convenience of understanding, only the first conductive layer 1 and the photoelectric conversion layer 3 are shown in practice, and the bypass conductive portion 5 is indicated by an imaginary line.
　有機薄膜太陽電池モジュールＡ１６は、電子機器Ｂ１６における電源モジュールであり、太陽光などの光を電力に変換する。具体的構成は、後述する。 Organic thin-film solar cell module A16 is a power supply module in electronic device B16, and converts light such as sunlight into electric power. A specific configuration will be described later.
　制御部７０１は、本発明でいう駆動部の一例に相当し、有機薄膜太陽電池モジュールＡ１６からの給電によって駆動する。なお、制御部７０１は、有機薄膜太陽電池モジュールＡ１６から直接給電されてもよいし、有機薄膜太陽電池モジュールＡ１６からの電力がバッテリ７０７に一旦充電された後に、このバッテリ７０７からの給電によって駆動されてもよい。制御部７０１は、たとえばＣＰＵ、メモリおよびインターフェースなどを具備して構成されている。 The control unit 701 corresponds to an example of a driving unit in the present invention, and is driven by power feeding from the organic thin film solar cell module A16. The control unit 701 may be directly supplied with power from the organic thin film solar cell module A16, or may be driven by power supplied from the battery 707 after the power from the organic thin film solar cell module A16 is once charged in the battery 707. May be. The control unit 701 includes, for example, a CPU, a memory, an interface, and the like.
　表示部７０２は、各種の情報を電子機器Ｂ１６の外観に表示するためのものである。表示部７０２は、たとえば液晶表示パネルあるいは有機ＥＬ表示パネルなどである。本実施形態においては、表示部７０２は、有機薄膜太陽電池モジュールＡ１６を透して外観に情報を表す。 The display unit 702 is for displaying various types of information on the external appearance of the electronic device B16. The display unit 702 is, for example, a liquid crystal display panel or an organic EL display panel. In the present embodiment, the display unit 702 displays information on the exterior through the organic thin film solar cell module A16.
　入力部７０３は、使用者の操作を電気信号として制御部７０１に出力するためのものである。入力部７０３は、たとえば表示部７０２に積層されたタッチパネルである。なお、表示部７０２と入力部７０３とが一体的に構成されていてもよい。 The input unit 703 is for outputting a user operation as an electrical signal to the control unit 701. The input unit 703 is a touch panel laminated on the display unit 702, for example. Note that the display unit 702 and the input unit 703 may be configured integrally.
　マイク７０４は、使用者の音声を電気信号に変換するデバイスである。スピーカ７０５は、通話相手の音声や各種の通知音などを出力するデバイスである。 The microphone 704 is a device that converts a user's voice into an electrical signal. The speaker 705 is a device that outputs the voice of the other party and various notification sounds.
　無線通信部７０６は、無線通信規格に準拠した双方向無線通信を行うデバイスである。 The wireless communication unit 706 is a device that performs bidirectional wireless communication conforming to the wireless communication standard.
　バッテリ７０７は、電子機器Ｂ１６を駆動する電力を蓄えるデバイスである。バッテリ７０７は、充放電が適宜可能に構成されている。バッテリ７０７の充電は、図示しないアダプタを用いた商用電力からの給電、または有機薄膜太陽電池モジュールＡ１６からの給電によってなされる。 The battery 707 is a device that stores electric power for driving the electronic device B16. The battery 707 is configured to be appropriately charged / discharged. The battery 707 is charged by feeding from commercial power using an adapter (not shown) or feeding from the organic thin film solar cell module A16.
　有機薄膜太陽電池モジュールＡ１６は、第１導電層１、第２導電層２、光電変換層３、支持基板４１、パッシベーション層４２、保護樹脂層４およびバイパス導電部５を備えている。本実施形態においては、有機薄膜太陽電池モジュールＡ１６は、平面視略矩形状とされているが、これは一例であり、それぞれは様々な形状とされうる。 The organic thin-film solar cell module A16 includes a first conductive layer 1, a second conductive layer 2, a photoelectric conversion layer 3, a support substrate 41, a passivation layer 42, a protective resin layer 4, and a bypass conductive portion 5. In the present embodiment, the organic thin-film solar cell module A16 has a substantially rectangular shape in plan view, but this is an example, and each may have various shapes.
　図１５２は、有機薄膜太陽電池モジュールＡ１６のうち第１導電層１、第２導電層２、光電変換層３、支持基板４１および保護樹脂層４を示す要部分解斜視図である。なお、理解の便宜上,支持基板４１は想像線（二点鎖線）で示している。図１５３は、有機薄膜太陽電池モジュールＡ１６の第１導電層１を示す平面図である。図１５４は、有機薄膜太陽電池モジュールＡ１６の光電変換層３を示す平面図である。図１５５は、有機薄膜太陽電池モジュールＡ１６の第２導電層２を示す平面図である。図１５６は、有機薄膜太陽電池モジュールＡ１６の保護樹脂層４の後述する第１保護樹脂層４５およびバイパス導電部５を示す底面図である。図１５７は、有機薄膜太陽電池モジュールＡ１６の保護樹脂層４の後述する第２保護樹脂層４６を示す平面図である。 FIG. 152 is an exploded perspective view of a main part showing the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3, the support substrate 41, and the protective resin layer 4 in the organic thin film solar cell module A16. For convenience of understanding, the support substrate 41 is indicated by an imaginary line (two-dot chain line). FIG. 153 is a plan view showing the first conductive layer 1 of the organic thin film solar cell module A16. FIG. 154 is a plan view showing the photoelectric conversion layer 3 of the organic thin film solar cell module A16. FIG. 155 is a plan view showing the second conductive layer 2 of the organic thin film solar cell module A16. FIG. 156 is a bottom view showing a first protective resin layer 45 and a bypass conductive portion 5 described later of the protective resin layer 4 of the organic thin film solar cell module A16. FIG. 157 is a plan view showing a second protective resin layer 46 described later of the protective resin layer 4 of the organic thin film solar cell module A16.
　支持基板４１は、有機薄膜太陽電池モジュールＡ１６の土台となる部材である。支持基板４１は、たとえば透明なガラスあるいは樹脂からなる。支持基板４１の厚さは、たとえば０．０５ｍｍ～２．０ｍｍである。 The support substrate 41 is a member that becomes a base of the organic thin film solar cell module A16. The support substrate 41 is made of, for example, transparent glass or resin. The thickness of the support substrate 41 is, for example, 0.05 mm to 2.0 mm.
　第１導電層１は、支持基板４１上に形成されている。第１導電層１は、透明であり、本実施形態においてはＩＴＯからなる。図１４９、図１５０および図１５３に示すように、第１導電層１は、第１電極部１１、接続部１３、スリット１７、表示用開口１８１、開口１８、スリット１９３、第３端縁１０１、第３外方端縁１０５、第１延出部１０４および第２延出部１０３を有する。本実施形態においては、第１導電層１は、平面視略矩形状とされているが、これは第１導電層１の形状の一例である。第１導電層１の形状は、様々な形状に設定されうる。第１導電層１の厚さは、たとえば１００ｎｍ～３００ｎｍである。 The first conductive layer 1 is formed on the support substrate 41. The first conductive layer 1 is transparent and is made of ITO in this embodiment. As shown in FIGS. 149, 150, and 153, the first conductive layer 1 includes the first electrode portion 11, the connection portion 13, the slit 17, the display opening 181, the opening 18, the slit 193, the third edge 101, It has a third outer end edge 105, a first extension part 104, and a second extension part 103. In the present embodiment, the first conductive layer 1 has a substantially rectangular shape in plan view, but this is an example of the shape of the first conductive layer 1. The shape of the first conductive layer 1 can be set to various shapes. The thickness of the first conductive layer 1 is, for example, 100 nm to 300 nm.
　第１電極部１１は、光電変換層３によって生じた正孔が集約される層であり、いわゆるアノード電極として機能する。本実施形態においては、第１導電層１の大部分が１つの第１電極部１１とされている。 The first electrode portion 11 is a layer in which holes generated by the photoelectric conversion layer 3 are aggregated, and functions as a so-called anode electrode. In the present embodiment, most of the first conductive layer 1 is a single first electrode portion 11.
　開口１８は、厚さ方向に第１導電層１を貫通した開口部分である。開口１８は、たとえばスピーカ７０５を機能させるために設けられたものである。なお、第１導電層１は、複数の開口１８を有してもよい。また、開口１８の用途は特に限定されず、通話実現ための部位やカメラモジュール等の機能を発揮させるために用いられてもよい。表示用開口１８１は、表示部７０２によって表示された情報を外観に表すために設けられたものである。本実施形態においては表示用開口１８１は、平面視矩形状である。 The opening 18 is an opening portion penetrating the first conductive layer 1 in the thickness direction. The opening 18 is provided to allow the speaker 705 to function, for example. The first conductive layer 1 may have a plurality of openings 18. Moreover, the use of the opening 18 is not particularly limited, and may be used to exhibit functions such as a part for realizing a call and a camera module. The display opening 181 is provided to display the information displayed by the display unit 702 on the appearance. In the present embodiment, the display opening 181 has a rectangular shape in plan view.
　スリット１９３は、環状のスリットであり、第１電極部１１から第１導電層１の一部を区画している。 The slit 193 is an annular slit and partitions a part of the first conductive layer 1 from the first electrode portion 11.
　第３端縁１０１は、表示用開口１８１を規定する端縁である。本実施形態においては、第３端縁１０１は、表示用開口１８１を四方から囲む端縁となっており、平面視矩形環状である。なお、第３端縁１０１は、表示用開口１８１を四方から囲む形状に限定されない。たとえば、第３端縁１０１が表示用開口１８１に三方から隣接することにより、表示用開口１８１が第１電極部１１から平面視において外方に開いた構成であってもよい。あるいは、第３端縁１０１は、表示用開口１８１に対して二方あるいは一方のみから隣接するものであってもよい。第３端縁１０１に隣接する領域、すなわち表示用開口１８１からは、支持基板４１が露出している。また、第３端縁１０１は、後述する第１保護樹脂層４５の第２端縁４５１およびパッシベーション層４２の第１端縁４２１から延出する第１導電層１の部分の内端縁とされている。 The third edge 101 is an edge that defines the display opening 181. In the present embodiment, the third edge 101 is an edge that surrounds the display opening 181 from four directions, and has a rectangular ring shape in plan view. The third end edge 101 is not limited to a shape surrounding the display opening 181 from four directions. For example, the third opening edge 101 may be adjacent to the display opening 181 from three directions so that the display opening 181 opens outward from the first electrode portion 11 in plan view. Alternatively, the third end edge 101 may be adjacent to the display opening 181 from two sides or only from one side. The support substrate 41 is exposed from a region adjacent to the third edge 101, that is, from the display opening 181. The third edge 101 is an inner edge of a portion of the first conductive layer 1 that extends from a second edge 451 of the first protective resin layer 45 described later and the first edge 421 of the passivation layer 42. ing.
　第１延出部１０４は、パッシベーション層４２から内方（表示用開口１８１）に延出する部位である。本実施形態においては、第１導電層１の略全内周部分に、第２延出部１０３が設けられている。 The first extending portion 104 is a portion extending from the passivation layer 42 inward (display opening 181). In the present embodiment, the second extending portion 103 is provided on substantially the entire inner peripheral portion of the first conductive layer 1.
　第２延出部１０３は、パッシベーション層４２から外方に延出する部位である。本実施形態においては、第１導電層１の略全外周部分に、第２延出部１０３が設けられている。第３外方端縁１０５は、第２延出部１０３の外周端縁である。 The second extending portion 103 is a portion that extends outward from the passivation layer 42. In the present embodiment, the second extending portion 103 is provided on substantially the entire outer peripheral portion of the first conductive layer 1. The third outer end edge 105 is an outer peripheral end edge of the second extending portion 103.
　図１４８および図１４９に示すように、接続部１３は、スリット１７によって区画されており、スリット１７によって第１電極部１１とは絶縁された部分である。スリット１７は、その両端１７１が第３外方端縁１０５に到達している。接続部１３は、接続部端縁１３１および接続延出部１３２を有する。接続部端縁１３１は、接続部１３のうちスリット１７には対向しない部分の端縁である。図示された例においては、接続部端縁１３１は、隣り合う第３外方端縁１０５の略延長線上に形成されている。スリット１７の平面視形状は特に限定されず、図示された例においては、接続部端縁１３１（第３外方端縁１０５）が延びる方向を長手方向とする細長形状であり、より具体的には略長矩形状である。接続延出部１３２は、接続部１３のうち平面視において光電変換層３から露出する部分である。接続部１３は、たとえば光電変換層３における発電によって集約された電子を、有機薄膜太陽電池モジュールＡ１６外に導くために用いられる。 As shown in FIG. 148 and FIG. 149, the connection portion 13 is partitioned by the slit 17 and is a portion insulated from the first electrode portion 11 by the slit 17. The slit 17 has both ends 171 reaching the third outer edge 105. The connection part 13 includes a connection part edge 131 and a connection extension part 132. The connection part edge 131 is an edge of a part of the connection part 13 that does not face the slit 17. In the illustrated example, the connection portion edge 131 is formed on a substantially extended line of the adjacent third outer end edge 105. The plan view shape of the slit 17 is not particularly limited, and in the illustrated example, the slit 17 has an elongated shape whose longitudinal direction is the direction in which the connection portion edge 131 (third outer edge 105) extends. Is a substantially long rectangular shape. The connection extension part 132 is a part exposed from the photoelectric conversion layer 3 in plan view in the connection part 13. The connection unit 13 is used, for example, to guide electrons collected by power generation in the photoelectric conversion layer 3 to the outside of the organic thin film solar cell module A16.
　第２導電層２は、その大部分が光電変換層３を介して第１導電層１上に積層されている。また、第２導電層２の一部は、第１導電層１に直接接している。第２導電層２の材質は特に限定されないが、本実施形態においては、第２導電層２は、Ａｌ、Ｗ、Ｍｏ、Ｍｎ、Ｍｇに代表される金属からなる。以下においては、第２導電層２がＡｌからなる場合を例に説明する。したがって、第２導電層２は、透明ではない。またこの場合、第２導電層２の支持基板４１とは反対側の表面に、Ａｌ２Ｏ３からなる不動態皮膜（図示略）が形成されてもよい。第２導電層２の厚さは、たとえば３０ｎｍ～１５０ｎｍである。 Most of the second conductive layer 2 is laminated on the first conductive layer 1 via the photoelectric conversion layer 3. A part of the second conductive layer 2 is in direct contact with the first conductive layer 1. Although the material of the 2nd conductive layer 2 is not specifically limited, In this embodiment, the 2nd conductive layer 2 consists of metals represented by Al, W, Mo, Mn, and Mg. Hereinafter, a case where the second conductive layer 2 is made of Al will be described as an example. Therefore, the second conductive layer 2 is not transparent. In this case, a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second conductive layer 2 opposite to the support substrate 41. The thickness of the second conductive layer 2 is, for example, 30 nm to 150 nm.
　図１５５に示すように、第２導電層２は、第２電極部２１および開口２８を有する。本実施形態においては、第２導電層２は、平面視略矩形状とされているが、これは第２導電層２の形状の一例である。第２導電層２の形状は、様々な形状に設定されうる。 As shown in FIG. 155, the second conductive layer 2 has a second electrode portion 21 and an opening 28. In the present embodiment, the second conductive layer 2 has a substantially rectangular shape in plan view, but this is an example of the shape of the second conductive layer 2. The shape of the second conductive layer 2 can be set to various shapes.
　第２電極部２１は、光電変換層３によって生じた電子が集約される層であり、いわゆるカソード電極として機能する。 The second electrode portion 21 is a layer in which electrons generated by the photoelectric conversion layer 3 are collected, and functions as a so-called cathode electrode.
　複数の開口２８は、厚さ方向に第２導電層２を貫通する開口部分である。図１５５における図中上方の４つの開口２８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口２８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 28 are openings that penetrate the second conductive layer 2 in the thickness direction. The four upper openings 28 in FIG. 155 are provided to make the speaker 705 function, for example. On the other hand, the largest opening 28 in the center in the figure is provided to display the information displayed by the display unit 702 on the appearance.
　第４内方退避端縁２０１は、図中中央の開口２８を規定する端縁である。本実施形態においては、第４内方退避端縁２０１は、開口２８を四方から囲む端縁となっており、平面視矩形環状である。なお、第４内方退避端縁２０１は、開口２８を四方から囲む形状に限定されない。たとえば、第４内方退避端縁２０１が開口２８を三方から隣接することにより、開口２８が第２電極部２１から平面視において外方に開いた構成であってもよい。あるいは、第４内方退避端縁２０１は、開口２８に対して二方あるいは一方のみから隣接するものであってもよい。また、図１４９に示すように、第４内方退避端縁２０１は、第３端縁１０１よりも内方（表示用開口１８１内に延出する方向とは反対側）に退避している。 The fourth inward retracting edge 201 is an edge that defines the central opening 28 in the drawing. In the present embodiment, the fourth inward retracting edge 201 is an edge that surrounds the opening 28 from four directions and has a rectangular shape in plan view. The fourth inward retracting edge 201 is not limited to a shape surrounding the opening 28 from four directions. For example, the fourth inward retracting edge 201 may be configured such that the opening 28 is opened outward from the second electrode portion 21 in plan view by adjoining the opening 28 from three directions. Alternatively, the fourth inward retracting edge 201 may be adjacent to the opening 28 from two or only one side. As shown in FIG. 149, the fourth inward retracting edge 201 is retracted inward (opposite to the direction extending into the display opening 181) than the third end edge 101.
　第４外方退避端縁２０２は、図１４９に示すように、後述するパッシベーション層４２の第１外方端縁４２２および第１保護樹脂層４５の第２外方端縁４５２よりも平面視において内方（図１４９における右方）に退避している。本実施形態においては、第４外方退避端縁２０２は、平面視環状である。 As shown in FIG. 149, the fourth outer retracting edge 202 is in a plan view than the first outer end edge 422 of the passivation layer 42 and the second outer end edge 452 of the first protective resin layer 45 described later. It is retracted inward (to the right in FIG. 149). In the present embodiment, the fourth outward retracting edge 202 has an annular shape in plan view.
　光電変換層３は、第１導電層１と第２導電層２とに挟まれて、支持基板４１に積層されている。光電変換層３は、有機薄膜からなる層であり、受けた光を電力に変換する光電変換機能を発揮する。光電変換層３の具体的構成は特に限定されないが、その一例を挙げると、バルクヘテロ接合有機活性層と、このバルクヘテロ接合有機活性層に対して第１導電層１側に積層された正孔輸送層とからなる。本実施形態においては、光電変換層３は、平面視矩形状とされているが、これは一例であり、光電変換層３は、様々な形状とされうる。光電変換層３の厚さは、たとえば５０ｎｍ～３００ｎｍである。 The photoelectric conversion layer 3 is sandwiched between the first conductive layer 1 and the second conductive layer 2 and laminated on the support substrate 41. The photoelectric conversion layer 3 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power. The specific configuration of the photoelectric conversion layer 3 is not particularly limited. For example, a bulk heterojunction organic active layer and a hole transport layer stacked on the first conductive layer 1 side with respect to the bulk heterojunction organic active layer are given. It consists of. In the present embodiment, the photoelectric conversion layer 3 has a rectangular shape in plan view, but this is an example, and the photoelectric conversion layer 3 can have various shapes. The thickness of the photoelectric conversion layer 3 is, for example, 50 nm to 300 nm.
　バルクヘテロ接合有機活性層は、ｐ型有機活性層領域とｎ型有機活性層領域が混在し、複雑なバルクへテロｐｎ接合を形成している。ｐ型有機活性層領域は、例えば、Ｐ３ＨＴ（poly(3-hexylthiophene-2,5diyl)）で形成され、ｎ型有機活性層領域は、例えば、ＰＣＢＭ（6,6-phenyl-C61-butyric acid methyl ester）で形成されている。正孔輸送層は、たとえばＰＥＤＯＴ：ＰＳＳで形成されている。 In the bulk heterojunction organic active layer, a p-type organic active layer region and an n-type organic active layer region are mixed to form a complex bulk hetero pn junction. The p-type organic active layer region is formed of, for example, P3HT (poly (3-hexylthiophene-2,5diyl)), and the n-type organic active layer region is, for example, PCBM (6,6-phenyl-C61-butyric acid methyl). ester). The hole transport layer is made of, for example, PEDOT: PSS.
　光電変換層３の形成に用いられる材質を例示すると、フタロシアニン（Ｐｃ:Phthalocyanine）、亜鉛フタロシアニン（ＺｎＰｃ:Zinc- phthalocyanine）、Ｍｅ－Ｐｔｃｄｉ（N,N’-dimethyl perylene-3,4,9,10-dicarboximide）、フラーレン（C 60 :Buckminster fullerene）が挙げられる。これらの材質は、たとえば真空蒸着に使用される。 Examples of materials used to form the photoelectric conversion layer 3 include phthalocyanine (Pc: Phthhalocyanine), zinc phthalocyanine (ZnPc: Zinc- phthalocyanine), Me-Ptcdi (N, N'-dimethyl perylene-3,4,9,10). -dicarboximide) and fullerene (C 60: Buckminster fullerene). These materials are used for vacuum deposition, for example.
　また、光電変換層３の形成に用いられる他の材質を例示すると、ＭＤＭＯ－ＰＰＶ（poly[2-methoxy-5-(3,7-dimethyl octyloxy)]-1,4-phenylene vinylene）、ＰＣＤＴＢＴ（poly[N-9’-hepta-decanyl-2,7-carbazole-alt-5,5-(4’,7’-di-thienyl-2’1’,3’-b3nzothiadizaole)]）、ＰＣ６０ＢＭ（6,6-phenyl-C61-butyric acid methyl ester）、ＰＣ７０ＢＭ（6,6-phenyl-C71-butyric acid methyl ester）が挙げられる。これらの材質は、たとえば溶液プロセスに使用される。 Other materials used for forming the photoelectric conversion layer 3 are exemplified by MDMO-PPV (poly [2-methoxy-5- (3,7-dimethyl-octyloxy)]-1,4-phenylene-vinylene), PCDTBT ( poly [N-9'-hepta-decanyl-2,7-carbazole-alt-5,5- (4 ', 7'-di-thienyl-2'1', 3'-b3nzothiadizaole)]), PC60BM (6 , 6-phenyl-C61-butyric acid methyl ester) and PC70BM (6,6-phenyl-C71-butyric acid methyl ester). These materials are used, for example, in solution processes.
　図１５４に示すように、光電変換層３は、非発電領域３０、発電領域３１、意匠表示部３５、開口３８、第５内方退避端縁３０１、第５外方退避端縁３０２および導通用貫通部３５１を有している。なお、図１５４においては、非発電領域３０および発電領域３１に、複数の離散点からなるハッチングを付している。意匠表示部３５は、平面視において第１導電層１のスリット１９３に囲まれた領域と重なっている。 As shown in FIG. 154, the photoelectric conversion layer 3 includes a non-power generation region 30, a power generation region 31, a design display unit 35, an opening 38, a fifth inner retraction edge 301, a fifth outer retraction edge 302, and a conductive layer. A through portion 351 is provided. In FIG. 154, the non-power generation region 30 and the power generation region 31 are hatched with a plurality of discrete points. The design display unit 35 overlaps with a region surrounded by the slits 193 of the first conductive layer 1 in plan view.
　意匠表示部３５は、外観に表れる意匠を構成する部位である。意匠表示部３５が構成する意匠とは、使用者等が目視することによって、文字、記号、図柄などの視覚的特異部分として視認されうるものを指す。本実施形態においては、意匠表示部３５は、円環形状を表している。 The design display unit 35 is a part that constitutes a design that appears on the exterior. The design which the design display part 35 comprises refers to what can be visually recognized as visually peculiar parts, such as a character, a symbol, and a design, when a user etc. look. In the present embodiment, the design display unit 35 represents an annular shape.
　本実施形態においては、意匠表示部３５は、意匠表示用貫通部３５０によって構成されている。意匠表示用貫通部３５０は、光電変換層３を厚さ方向に貫通する態様の部位である。このような意匠表示用貫通部３５０は、外観に表れる。また、本実施形態においては、意匠表示用貫通部３５０は、第２導電層２を第１導電層１側に露出させている。すなわち、意匠表示用貫通部３５０を通じて第２導電層２の一部が外観に表れている。意匠表示用貫通部３５０の形状等は特に限定されず、図示された例においては、アルファベットを表す形状が採用されている。 In the present embodiment, the design display part 35 is configured by a design display through part 350. The design display penetrating portion 350 is a portion having a mode of penetrating the photoelectric conversion layer 3 in the thickness direction. Such a design display penetrating portion 350 appears on the exterior. In the present embodiment, the design display through-hole 350 exposes the second conductive layer 2 to the first conductive layer 1 side. That is, a part of the second conductive layer 2 appears on the exterior through the design display through-hole 350. The shape or the like of the design display through-hole 350 is not particularly limited, and in the illustrated example, a shape representing an alphabet is adopted.
　発電領域３１は、第１導電層１の第１電極部１１および第２導電層２の第２電極部２１に挟まれ、且つ光電変換機能を発揮することにより発電に寄与する領域である。また、発電領域３１の形状は、平面視において、第１電極部１１および第２電極部２１に一致する。 The power generation region 31 is a region that is sandwiched between the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 and contributes to power generation by exhibiting a photoelectric conversion function. The shape of the power generation region 31 matches the first electrode part 11 and the second electrode part 21 in plan view.
　図１４８、図１４９および図１５４に示すように、導通用貫通部３５１は、光電変換層３を貫通する孔によって構成されている。導通用貫通部３５１は、平面視において第１導電層１の接続部１３に内包される位置に設けられている。図示された例においては、複数の導通用貫通部３５１が設けられている。導通用貫通部３５１の形状および配置は特に限定されない。図示された例においては、導通用貫通部３５１は、平面視円形であり、その直径がたとえば４０μｍ程度である。また、複数の導通用貫通部３５１は、接続部１３の長手方向に沿って配列されている。第１導電層１の接続部１３と第２導電層２とは、導通用貫通部３５１を介して互いに導通している。 As shown in FIGS. 148, 149, and 154, the conduction through portion 351 is configured by a hole that penetrates the photoelectric conversion layer 3. The conduction through portion 351 is provided at a position included in the connection portion 13 of the first conductive layer 1 in plan view. In the illustrated example, a plurality of through portions 351 for conduction are provided. The shape and arrangement of the conduction through portion 351 are not particularly limited. In the illustrated example, the through-hole for conduction 351 has a circular shape in plan view, and its diameter is, for example, about 40 μm. In addition, the plurality of through portions 351 for conduction are arranged along the longitudinal direction of the connection portion 13. The connection portion 13 of the first conductive layer 1 and the second conductive layer 2 are electrically connected to each other via the conduction through portion 351.
　非発電領域３０は、光電変換層３のうち平面視において第１導電層１の第１電極部１１および第２導電層２の第２電極部２１とは重ならない領域であり、第１導電層１の接続部１３およびスリット１９３に囲まれた領域と重なっている領域である。接続部１３は、第２導電層２と接している。このため、接続部１３と平面視において重なる非発電領域３０は、発電に寄与しない。また、意匠表示部３５と平面視において重なるスリット１９３に囲まれた領域と平面視において一致する光電変換層３の部分は、非発電領域３０となっている。すなわち、光電変換層３のうち複数の発電領域３１以外の領域が、非発電領域３０とされている。 The non-power generation region 30 is a region of the photoelectric conversion layer 3 that does not overlap the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 in plan view. This is an area that overlaps with the area surrounded by one connecting portion 13 and the slit 193. The connection part 13 is in contact with the second conductive layer 2. For this reason, the non-power generation region 30 overlapping the connection portion 13 in plan view does not contribute to power generation. In addition, a portion of the photoelectric conversion layer 3 that coincides with the region surrounded by the slit 193 that overlaps the design display unit 35 in plan view is a non-power generation region 30. That is, a region other than the plurality of power generation regions 31 in the photoelectric conversion layer 3 is a non-power generation region 30.
　複数の開口３８は、光電変換層３を厚さ方向に貫通する開口部分である。図１５４における図中上方の開口３８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口３８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 38 are openings that penetrate the photoelectric conversion layer 3 in the thickness direction. The upper opening 38 in FIG. 154 is provided, for example, to make the speaker 705 function. On the other hand, the largest opening 38 in the center in the drawing is provided to display the information displayed by the display unit 702 on the appearance.
　第５内方退避端縁３０１は、図中中央の開口３８を規定する端縁である。本実施形態においては、第５内方退避端縁３０１は、開口３８を四方から囲む端縁となっており、平面視矩形環状である。なお、第５内方退避端縁３０１は、開口３８を四方から囲む形状に限定されない。たとえば、第５内方退避端縁３０１が開口３８を三方から隣接することにより、開口３８が発電領域３１から平面視において外方に開いた構成であってもよい。あるいは、第５内方退避端縁３０１は、開口３８に対して二方あるいは一方のみに設けられたものであってもよい。また、図１４９に示すように、第５内方退避端縁３０１は、第３端縁１０１よりも内方（表示用開口１８１内に延出する方向とは反対側）に退避している。 The fifth inward retracting edge 301 is an edge that defines the central opening 38 in the drawing. In the present embodiment, the fifth inward retracting edge 301 is an edge that surrounds the opening 38 from four directions and has a rectangular ring shape in plan view. The fifth inward retracting edge 301 is not limited to a shape surrounding the opening 38 from four directions. For example, the fifth inward retracting edge 301 may be configured such that the opening 38 is opened outward from the power generation region 31 in a plan view by adjoining the opening 38 from three directions. Alternatively, the fifth inward retracting edge 301 may be provided in two or only one with respect to the opening 38. Further, as shown in FIG. 149, the fifth inward retracting edge 301 is retracted inward (opposite to the direction extending into the display opening 181) than the third end edge 101.
　第５外方退避端縁３０２は、図１４８および図１４９に示すように、後述するパッシベーション層４２の第１外方端縁４２２よりも平面視において内方（図１４９における右方）に退避している。本実施形態においては、第５外方退避端縁３０２は、平面視環状である。 As shown in FIGS. 148 and 149, the fifth outer retreating edge 302 is retreated more inwardly (rightward in FIG. 149) in a plan view than a first outer end edge 422 of a passivation layer 42 described later. ing. In the present embodiment, the fifth outward retracting edge 302 is annular in plan view.
　パッシベーション層４２は、第２導電層２上に積層されており、第２導電層２および光電変換層３を保護している。パッシベーション層４２は、たとえばＳｉＮまたはＳｉＯＮからなる。パッシベーション層４２の厚さは、たとえば０．５μｍ～２．０μｍであり、本実施形態においては、たとえば１．５μｍ程度とされる。 The passivation layer 42 is laminated on the second conductive layer 2 and protects the second conductive layer 2 and the photoelectric conversion layer 3. The passivation layer 42 is made of, for example, SiN or SiON. The thickness of the passivation layer 42 is, for example, 0.5 μm to 2.0 μm. In the present embodiment, the thickness is, for example, about 1.5 μm.
　保護樹脂層４は、パッシベーション層４２を覆っている層である。また、保護樹脂層４は、バイパス導電部５を覆っている。保護樹脂層４は、たとえば紫外線硬化樹脂からなる。保護樹脂層４の厚さは、たとえば３μｍ～２０μｍであり、本実施形態においては、たとえば１０μｍ程度とされる。 The protective resin layer 4 is a layer covering the passivation layer 42. The protective resin layer 4 covers the bypass conductive portion 5. The protective resin layer 4 is made of, for example, an ultraviolet curable resin. The thickness of the protective resin layer 4 is, for example, 3 μm to 20 μm. In this embodiment, the thickness is, for example, about 10 μm.
　本実施形態においては、保護樹脂層４は、第１保護樹脂層４５および第２保護樹脂層４６を有する。第１保護樹脂層４５は、パッシベーション層４２を覆う層である。第２保護樹脂層４６は、第１保護樹脂層４５に積層されており、バイパス導電部５を覆う層である。 In this embodiment, the protective resin layer 4 includes a first protective resin layer 45 and a second protective resin layer 46. The first protective resin layer 45 is a layer that covers the passivation layer 42. The second protective resin layer 46 is laminated on the first protective resin layer 45 and covers the bypass conductive portion 5.
　図１４８、図１４９および図１５６に示すように、第１保護樹脂層４５は、複数の開口４５８、第２端縁４５１および第２外方端縁４５２を有する。 148, 149, and 156, the first protective resin layer 45 has a plurality of openings 458, a second end edge 451, and a second outer end edge 452.
　複数の開口４５８は、第１保護樹脂層４５の一部が削除された態様であり、第１保護樹脂層４５を貫通している。図１５６における図中上方の３つの開口４５８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口４５８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 458 is a mode in which a part of the first protective resin layer 45 is removed, and penetrates the first protective resin layer 45. In FIG. 156, the upper three openings 458 in the drawing are provided to allow the speaker 705 to function, for example. On the other hand, the largest opening 458 in the center in the drawing is provided to display the information displayed by the display unit 702 on the appearance.
　第２端縁４５１は、図中中央の開口４５８を規定する端縁である。本実施形態においては、第２端縁４５１は、開口４５８を四方から囲む端縁となっており、平面視矩形環状である。なお、第２端縁４５１は、開口４５８を四方から囲む形状に限定されない。たとえば、第２端縁４５１が開口４５８を三方から隣接することにより、開口４５８が第１保護樹脂層４５から平面視において外方に開いた構成であってもよい。あるいは、第２端縁４５１は、開口４５８に対して二方あるいは一方のみ設けられたものであってもよい。 The second edge 451 is an edge that defines the central opening 458 in the drawing. In the present embodiment, the second end edge 451 is an end edge that surrounds the opening 458 from four directions, and has a rectangular ring shape in plan view. The second end edge 451 is not limited to a shape surrounding the opening 458 from four sides. For example, the second end edge 451 may be adjacent to the opening 458 from three directions so that the opening 458 opens outward from the first protective resin layer 45 in plan view. Alternatively, the second end edge 451 may be provided in two or only one with respect to the opening 458.
　第２外方端縁４５２は、平面視において光電変換層３の少なくとも一部を挟んで第２端縁４５１と反対側に位置しており、本実施形態においては、第１保護樹脂層４５の外周端縁である。 The second outer edge 452 is located on the opposite side of the second edge 451 across at least a part of the photoelectric conversion layer 3 in plan view. In the present embodiment, the second outer edge 452 of the first protective resin layer 45 is located. It is an outer peripheral edge.
　図１５７に示すように、第２保護樹脂層４６は、複数の開口４６８、第６端縁４６１および第６外方端縁４６２を有する。また、第２保護樹脂層４６は、後述する第１集極部５３１および第２集極部５３２を露出させる開口または切り欠きが適宜形成されてもよい。 157, the second protective resin layer 46 has a plurality of openings 468, a sixth end edge 461, and a sixth outer end edge 462. Further, the second protective resin layer 46 may be appropriately formed with an opening or a notch that exposes a first electrode collector portion 531 and a second electrode collector portion 532 described later.
　複数の開口４６８は、第２保護樹脂層４６の一部が削除された態様であり、第２保護樹脂層４６を貫通している。図１５７における図中上方の３つの開口４６８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口４６８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 468 are a form in which a part of the second protective resin layer 46 is deleted, and penetrate the second protective resin layer 46. Three upper openings 468 in FIG. 157 are provided in order to make the speaker 705 function, for example. On the other hand, the largest opening 468 in the center in the figure is provided to display the information displayed by the display unit 702 on the appearance.
　第６端縁４６１は、図中中央の開口４６８を規定する端縁である。本実施形態においては、第６端縁４６１は、開口４６８を四方から囲む端縁となっており、平面視矩形環状である。なお、第６端縁４６１は、開口４６８を四方から囲む形状に限定されない。たとえば、第６端縁４６１が開口４６８を三方から隣接することにより、開口４６８が第２保護樹脂層４６から平面視において外方に開いた構成であってもよい。あるいは、第６端縁４６１は、開口４６８に対して二方あるいは一方のみ設けられたものであってもよい。 The sixth edge 461 is an edge that defines the central opening 468 in the figure. In the present embodiment, the sixth end edge 461 is an end edge surrounding the opening 468 from four directions, and has a rectangular ring shape in plan view. Note that the sixth end edge 461 is not limited to a shape surrounding the opening 468 from four directions. For example, the sixth edge 461 may be adjacent to the opening 468 from three directions so that the opening 468 opens outward from the second protective resin layer 46 in plan view. Alternatively, the sixth end edge 461 may be provided in two or only one with respect to the opening 468.
　第６外方端縁４６２は、平面視において光電変換層３の少なくとも一部を挟んで第６端縁４６１と反対側に位置しており、本実施形態においては、第２保護樹脂層４６の外周端縁である。 The sixth outer edge 462 is located on the opposite side of the sixth edge 461 across at least a part of the photoelectric conversion layer 3 in plan view. In the present embodiment, the sixth outer edge 462 of the second protective resin layer 46 is located. It is an outer peripheral edge.
　図１４８～図１５０に示すようにパッシベーション層４２は、第１端縁４２１および第１外方端縁４２２を有している。 148 to 150, the passivation layer 42 has a first edge 421 and a first outer edge 422.
　第１端縁４２１は、平面視において第２端縁４５１と一致している。また、本実施形態においては、第１端縁４２１は、第２端縁４５１と連続した面をなしている。第１外方端縁４２２は、平面視において第２外方端縁４５２と一致している。また、本実施形態においては、第１外方端縁４２２は、第２外方端縁４５２と連続した面をなしている。 The first end edge 421 coincides with the second end edge 451 in plan view. In the present embodiment, the first end edge 421 forms a surface continuous with the second end edge 451. The first outer end edge 422 coincides with the second outer end edge 452 in plan view. In the present embodiment, the first outer end edge 422 forms a surface that is continuous with the second outer end edge 452.
　バイパス導電部５は、第１導電層１に到達した正孔と第２導電層２に到達した電子とを集電するための、少なくとも第１導電層１より低抵抗な経路を構成するためのものである。本実施形態においては、バイパス導電部５は、第１バスバー部５１３、２つの第２バスバー部５１４、第１集極部５３１、第２集極部５３２、連絡部５２、第７端縁５１１および第７外方端縁５１２を有する。バイパス導電部５は、少なくとも第１導電層１よりも低抵抗な材質からなり、たとえばＡｇまたはカーボンを含む。 The bypass conductive portion 5 is configured to collect a hole that has reached the first conductive layer 1 and an electron that has reached the second conductive layer 2 to form a path having at least a lower resistance than the first conductive layer 1. Is. In the present embodiment, the bypass conductive portion 5 includes a first bus bar portion 513, two second bus bar portions 514, a first electrode collector portion 531, a second electrode collector portion 532, a communication portion 52, a seventh edge 511, and It has a seventh outer edge 512. The bypass conductive portion 5 is made of a material having a resistance lower than that of the first conductive layer 1 and contains, for example, Ag or carbon.
　図１４８～図１５０および図１５６に示すように、１つの第２バスバー部５１４は、第２端縁４５１および第１端縁４２１を全長にわたって覆っている。この第２バスバー部５１４は、第１導電層１のうち第３端縁１０１と第１端縁４２１（第２端縁４５１）との間に位置する第１延出部１０４を覆っている。また、この第２バスバー部５１４の第７端縁５１１は、平面視において第３端縁１０１と一致している。他方の第２バスバー部５１４は、第２外方端縁４５２および第１外方端縁４２２の一部を除く略全長にわたって覆っている。この第２バスバー部５１４は、第１導電層１の第２延出部１０３を覆っている。このバスバー部５１の第７外方端縁５１２は、平面視において第３外方端縁１０５と一致している。このような構成により、２つのバスバー部５１は、それぞれが第１導電層１と導通している。 As shown in FIGS. 148 to 150 and 156, one second bus bar portion 514 covers the second end edge 451 and the first end edge 421 over the entire length. The second bus bar portion 514 covers the first extending portion 104 located between the third end edge 101 and the first end edge 421 (second end edge 451) of the first conductive layer 1. The seventh end edge 511 of the second bus bar portion 514 coincides with the third end edge 101 in plan view. The other second bus bar portion 514 covers substantially the entire length excluding a part of the second outer end edge 452 and the first outer end edge 422. The second bus bar portion 514 covers the second extending portion 103 of the first conductive layer 1. The seventh outer end edge 512 of the bus bar portion 51 coincides with the third outer end edge 105 in plan view. With such a configuration, each of the two bus bar portions 51 is electrically connected to the first conductive layer 1.
　第２集極部５３２は、第２バスバー部５１４に導通する部分であり、第１導電層１によって集約された正孔を、たとえば電子機器Ｂ１６に設けられた正孔用端子に出力するための部分である。本実施形態においては、第２集極部５３２は、保護樹脂層４の第１保護樹脂層４５上に形成されている。第２集極部５３２は、平面視において第２導電層２および光電変換層３と重なっている。支持基板４１の厚さ方向において、光電変換層３と第２集極部５３２との間には、パッシベーション層４２および第１保護樹脂層４５が介在している。第２集極部５３２の平面視形状は特に限定されず、図示された例においては、略半楕円形状とされている。また、図示された例においては、第２集極部５３２は、一方の第２バスバー部５１４に直接つながっている。 The second electrode collector portion 532 is a portion that conducts to the second bus bar portion 514, and outputs holes collected by the first conductive layer 1 to, for example, a hole terminal provided in the electronic device B16. Part. In the present embodiment, the second electrode collector 532 is formed on the first protective resin layer 45 of the protective resin layer 4. The second electrode collector 532 overlaps the second conductive layer 2 and the photoelectric conversion layer 3 in plan view. In the thickness direction of the support substrate 41, the passivation layer 42 and the first protective resin layer 45 are interposed between the photoelectric conversion layer 3 and the second electrode collector 532. The shape of the second collector 532 in plan view is not particularly limited, and in the illustrated example, it is substantially semi-elliptical. In the illustrated example, the second electrode collector 532 is directly connected to one second bus bar 514.
　連絡部５２は、第１保護樹脂層４５上に形成された部分であり、図１５６における図中内側のバスバー部５１と第２集極部５３２とを連結している。これにより、２つの第２バスバー部５１４に集約された正孔が第２集極部５３２へと導かれる。 The connecting part 52 is a part formed on the first protective resin layer 45 and connects the bus bar part 51 on the inner side in the drawing in FIG. As a result, the holes collected in the two second bus bar portions 514 are guided to the second electrode collector portion 532.
　図１４８、図１４９および図１５６に示すように、第１バスバー部５１３は、第２バスバー部５１４から離間しており、接続部１３の接続延出部１３２の一部を覆っている。より具体的には、第１バスバー部５１３は、図１４８における図中左右方向（接続部１３の長手方向）において接続延出部１３２の一部を覆っている。図１４９に示すように、第１バスバー部５１３の第７端縁５１１は、平面視において接続部１３の接続部端縁１３１と一致している。第２バスバー部５１４には、迂回部５１４１が設けられている。迂回部５１４１は、第２バスバー部５１４のうち第１バスバー部５１３の両側に位置する部分に繋がっており、平面視において第１バスバー部５１３および第１集極部５３１を迂回するように形成されている。 As shown in FIGS. 148, 149, and 156, the first bus bar portion 513 is separated from the second bus bar portion 514 and covers a part of the connection extension portion 132 of the connection portion 13. More specifically, the first bus bar portion 513 covers a part of the connection extension portion 132 in the left-right direction in FIG. 148 (longitudinal direction of the connection portion 13). As shown in FIG. 149, the seventh end edge 511 of the first bus bar portion 513 coincides with the connection portion end edge 131 of the connection portion 13 in plan view. The second bus bar portion 514 is provided with a detour portion 5141. The bypass portion 5141 is connected to portions of the second bus bar portion 514 located on both sides of the first bus bar portion 513, and is formed to bypass the first bus bar portion 513 and the first electrode collector portion 531 in a plan view. ing.
　第１集極部５３１は、第１バスバー部５１３に導通する部分であり、第２導電層２によって集約された電子を、たとえば電子機器Ｂ１６に設けられた電子用端子に出力するための部分である。本実施形態においては、第１集極部５３１は、保護樹脂層４の第１保護樹脂層４５上に形成されている。第１集極部５３１は、平面視において第２導電層２および光電変換層３と重なっている。支持基板４１の厚さ方向において、光電変換層３と第１集極部５３１との間には、パッシベーション層４２および第１保護樹脂層４５が介在している。第１集極部５３１の平面視形状は特に限定されず、図示された例においては、略半楕円形状とされている。また、図示された例においては、第１集極部５３１は、第１バスバー部５１３に直接つながっている。 The first electrode collecting portion 531 is a portion that conducts to the first bus bar portion 513, and is a portion for outputting electrons collected by the second conductive layer 2 to, for example, an electronic terminal provided in the electronic device B16. is there. In the present embodiment, the first electrode collector 531 is formed on the first protective resin layer 45 of the protective resin layer 4. The first electrode collector 531 overlaps the second conductive layer 2 and the photoelectric conversion layer 3 in plan view. In the thickness direction of the support substrate 41, the passivation layer 42 and the first protective resin layer 45 are interposed between the photoelectric conversion layer 3 and the first electrode collector 531. The shape of the first collector portion 531 in plan view is not particularly limited, and in the illustrated example, it is substantially semi-elliptical. In the illustrated example, the first electrode collector 531 is directly connected to the first bus bar 513.
　図１４８に示すように、本実施形態においては、意匠表示部３５（意匠表示用貫通部３５０）は、平面視において導通用貫通部３５１に対して接続部端縁１３１とは反対側に位置している。言い換えると、導通用貫通部３５１は、平面視において接続部端縁１３１と意匠表示部３５との間に位置している。 As shown in FIG. 148, in the present embodiment, the design display part 35 (design display through part 350) is located on the opposite side of the connection part edge 131 with respect to the conduction through part 351 in plan view. ing. In other words, the conduction through portion 351 is located between the connection portion edge 131 and the design display portion 35 in a plan view.
　図１４８～図１５０に示すように、第２端縁４５１および第１端縁４２１に対して第２バスバー部５１４および第２保護樹脂層４６を間に挟んで隣接する領域から、支持基板４１の一部が露出領域４１１として露出している。また、露出領域４１１は、第１導電層１等によって覆われておらず、支持基板４１の表面が直接露出している。 As shown in FIGS. 148 to 150, from the region adjacent to the second end 451 and the first end 421 with the second bus bar portion 514 and the second protective resin layer 46 interposed therebetween, A part is exposed as an exposed region 411. The exposed region 411 is not covered with the first conductive layer 1 or the like, and the surface of the support substrate 41 is directly exposed.
　次いで、有機薄膜太陽電池モジュールＡ１６の製造方法の一例について、図１５８～図１７０を参照しつつ、以下に説明する。なお、これらの図においては、理解の便宜上、図１４９および図１５０とは、天地逆に表されている。また、図１５８～図１６８においては、図１４８に示したＣＸＬＩＸ－ＣＸＬＩＸ線における断面構造を生成する過程を示している。 Next, an example of a method for producing the organic thin film solar cell module A16 will be described below with reference to FIGS. In these drawings, for convenience of understanding, FIGS. 149 and 150 are shown upside down. FIGS. 158 to 168 show a process of generating a cross-sectional structure taken along the line CXLIX-CXLIX shown in FIG.
　まず、図１５８に示すように、支持基板４１を用意する。そして、支持基板４１の片面にたとえばスパッタ法などの一般的な手法によりＩＴＯからなる第１導電膜１０を積層する。 First, as shown in FIG. 158, a support substrate 41 is prepared. Then, the first conductive film 10 made of ITO is laminated on one side of the support substrate 41 by a general method such as sputtering.
　次に、図１５９および図１６０に示すように、該ＩＴＯにパターニングを施し、開口１８、表示用開口１８１、スリット１９３、スリット１７等のパターンを形成するためのパターニングを行う。ここで、ＩＴＯへのパターニング手法としては、たとえばウエットエッチングを用いた手法、Ｇｒｅｅｎレーザー光等のレーザーパターニングを用いた手法が適宜採用される。 Next, as shown in FIGS. 159 and 160, patterning is performed on the ITO to form patterns such as openings 18, display openings 181, slits 193, and slits 17 and the like. Here, as a patterning method to ITO, for example, a method using wet etching and a method using laser patterning such as Green laser light are appropriately employed.
　次いで、図１６１に示すように、有機膜３Ａを形成する。有機膜３Ａの形成は、たとえば、スピンコート塗布により支持基板４１上および第１導電膜１０上に有機膜を成膜することによって行う。 Next, as shown in FIG. 161, an organic film 3A is formed. The organic film 3A is formed by, for example, forming an organic film on the support substrate 41 and the first conductive film 10 by spin coating.
　次いで、図１６２および図１６３に示すように、有機膜３Ａにパターニングを施すことにより、光電変換層３を形成する。有機膜３Ａのパターニングは、たとえば酸素プラズマエッチング、レーザーパターニングを用いることによって、第５内方退避端縁３０１、第５外方退避端縁３０２、開口３８、意匠表示用貫通部３５０（意匠表示部３５）、導通用貫通部３５１を有する構成に仕上げることにより行う。なお、光電変換層３は、上記に限定されず、スリットコート法、キャピラリーコート法、グラビア印刷などの手法によって、支持基板４１上および第１導電膜１０上に直接的に有機膜をパターニングすることで形成するようにしても良い。ただし、図示された例においては、導通用貫通部３５１は、比較的小径の円形貫通孔である。このような導通用貫通部３５１の形成は、レーザー光Ｌｚ０を用いたパターニングが適している。レーザー光Ｌｚ０としては、有機膜３Ａを除去しつつ、第１導電膜１０を残存させる波長のレーザー光を選択することが好ましく、たとえばＧｒｅｅｎレーザー光が選択される。 Next, as shown in FIGS. 162 and 163, the photoelectric conversion layer 3 is formed by patterning the organic film 3A. For patterning of the organic film 3A, for example, oxygen plasma etching or laser patterning is used, so that the fifth inner retracting edge 301, the fifth outer retracting edge 302, the opening 38, the design display through portion 350 (design display portion) 35), by finishing to a configuration having a through-hole 351 for conduction. The photoelectric conversion layer 3 is not limited to the above, and an organic film is directly patterned on the support substrate 41 and the first conductive film 10 by a technique such as a slit coating method, a capillary coating method, or gravure printing. It may be formed by. However, in the illustrated example, the conduction through portion 351 is a circular through hole having a relatively small diameter. For the formation of such a conduction through portion 351, patterning using the laser beam Lz0 is suitable. As the laser beam Lz0, it is preferable to select a laser beam having a wavelength that leaves the first conductive film 10 while removing the organic film 3A. For example, a green laser beam is selected.
　次いで、図１６４に示すように、第２導電層２を形成する。第２導電層２の形成は、たとえば上述した金属を真空加熱蒸着法によって支持基板４１、第１導電膜１０および光電変換層３上に金属膜を成膜する。次に、該金属膜に例えばマスク層を用いたエッチングを行うことによりパターニングを施す。このパターニングにより、光電変換層３上に第４内方退避端縁２０１および第４外方退避端縁２０２を有する第２導電層２を形成する。また、当該工程において、光電変換層３の導通用貫通部３５１が第２導電層２によって埋められる。これにより、第１導電層１と第２導電層２とが、導通用貫通部３５１を介して導通する。 Next, as shown in FIG. 164, the second conductive layer 2 is formed. The second conductive layer 2 is formed, for example, by forming a metal film on the support substrate 41, the first conductive film 10 and the photoelectric conversion layer 3 using the above-described metal by vacuum heating vapor deposition. Next, the metal film is patterned by etching using, for example, a mask layer. By this patterning, the second conductive layer 2 having the fourth inner withdrawal edge 201 and the fourth outer withdrawal edge 202 is formed on the photoelectric conversion layer 3. Further, in the process, the conduction through portion 351 of the photoelectric conversion layer 3 is filled with the second conductive layer 2. As a result, the first conductive layer 1 and the second conductive layer 2 are conducted through the conduction through portion 351.
　次いで、図１６５に示すように、絶縁膜４２０を形成する。絶縁膜４２０の形成は、たとえばプラズマＣＶＤ法によってＳｉＮまたはＳｉＯＮなどの膜を支持基板４１、第１導電層１、光電変換層３および第２導電層２上に形成することにより行う。 Next, as shown in FIG. 165, an insulating film 420 is formed. The insulating film 420 is formed by forming a film such as SiN or SiON on the support substrate 41, the first conductive layer 1, the photoelectric conversion layer 3, and the second conductive layer 2 by, for example, plasma CVD.
　次いで、図１６６に示すように、第１保護樹脂層４５を形成する。第１保護樹脂層４５の形成は、たとえば紫外線硬化樹脂を含む液体樹脂材料をスクリーン印刷によって絶縁膜４２０上に塗布し、紫外線を照射することによって硬化させる。これにより、第２端縁４５１および第２外方端縁４５２を有する第１保護樹脂層４５が得られる。 Next, as shown in FIG. 166, a first protective resin layer 45 is formed. The first protective resin layer 45 is formed, for example, by applying a liquid resin material containing an ultraviolet curable resin on the insulating film 420 by screen printing and irradiating it with ultraviolet rays. As a result, the first protective resin layer 45 having the second end edge 451 and the second outer end edge 452 is obtained.
　次いで、図１６７に示すように、第１保護樹脂層４５をマスクとして用いたパターニングを絶縁膜４２０に施す。このパターニングは、たとえばフッ化水素を０．５５％～４．５％含むフッ化水素酸を用いたウエットエッチングによって行う。このようなフッ化水素酸は、紫外線硬化樹脂からなる第１保護樹脂層４５をほとんど溶解しない一方、ＳｉＮ等からなる絶縁膜４２０を選択的に溶解する。また、フッ化水素酸は、ＩＴＯ等からなる第１導電膜１０はほとんど溶解しない。この結果、第１端縁４２１および第１外方端縁４２２を有するパッシベーション層４２が形成される。第１端縁４２１は、平面視において第２端縁４５１と一致する。第１端縁４２１と第２端縁４５１とは、連続した面をなす。また、第１外方端縁４２２は、平面視において第２外方端縁４５２と一致する。第１外方端縁４２２と第２外方端縁４５２とは、連続した面をなす。 Next, as shown in FIG. 167, patterning is performed on the insulating film 420 using the first protective resin layer 45 as a mask. This patterning is performed, for example, by wet etching using hydrofluoric acid containing 0.55% to 4.5% hydrogen fluoride. Such hydrofluoric acid hardly dissolves the first protective resin layer 45 made of an ultraviolet curable resin, but selectively dissolves the insulating film 420 made of SiN or the like. Further, hydrofluoric acid hardly dissolves the first conductive film 10 made of ITO or the like. As a result, a passivation layer 42 having a first edge 421 and a first outer edge 422 is formed. The first edge 421 coincides with the second edge 451 in plan view. The first edge 421 and the second edge 451 form a continuous surface. The first outer end edge 422 coincides with the second outer end edge 452 in plan view. The first outer end edge 422 and the second outer end edge 452 form a continuous surface.
　次いで、図１６８および図１６９に示すように、バイパス導電部５を形成する。バイパス導電部５の形成は、たとえばＡｇまたはカーボンを含むペーストを塗布した後に、たとえば乾燥などの手法によってこのペーストを硬化させることによって行う。 Next, as shown in FIGS. 168 and 169, the bypass conductive portion 5 is formed. The bypass conductive portion 5 is formed by, for example, applying a paste containing Ag or carbon and then curing the paste by a technique such as drying.
　次いで、図１７０に示すように、第１導電膜１０にパターニングを施す。このパターニングは、たとえば濃塩酸と濃硝酸とが３：１の比率で混合された王水を用いて行う。このパターニングにより、第１導電膜１０のうちバイパス導電部５や第１保護樹脂層４５から露出した部分が選択的に除去される。この結果、第３端縁１０１等を有する第１導電層１が形成される。次いで、第２保護樹脂層４６を形成する。第２保護樹脂層４６の形成は、たとえば紫外線硬化樹脂を含む液体樹脂材料をスクリーン印刷によって絶縁膜４２０上に塗布し、紫外線を照射することによって硬化させる。これにより、第６端縁４６１および第６外方端縁４６２を有する第２保護樹脂層４６が得られ、保護樹脂層４が形成される。以上の工程を経ることにより、有機薄膜太陽電池モジュールＡ１６が得られる。 Next, as shown in FIG. 170, the first conductive film 10 is patterned. This patterning is performed, for example, using aqua regia in which concentrated hydrochloric acid and concentrated nitric acid are mixed at a ratio of 3: 1. By this patterning, portions of the first conductive film 10 exposed from the bypass conductive portion 5 and the first protective resin layer 45 are selectively removed. As a result, the first conductive layer 1 having the third edge 101 and the like is formed. Next, the second protective resin layer 46 is formed. The second protective resin layer 46 is formed by, for example, applying a liquid resin material containing an ultraviolet curable resin on the insulating film 420 by screen printing and curing it by irradiating with ultraviolet rays. Thereby, the 2nd protective resin layer 46 which has the 6th edge 461 and the 6th outside edge 462 is obtained, and protective resin layer 4 is formed. Through the above steps, an organic thin film solar cell module A16 is obtained.
　次に、有機薄膜太陽電池モジュールＡ１６および電子機器Ｂ１６の作用について説明する。 Next, the operation of the organic thin film solar cell module A16 and the electronic device B16 will be described.
　本実施形態によれば、図１４８および図１４９に示すように、第３外方端縁１０５に沿う光電変換層３の第５外方退避端縁３０２に近い位置に導通用貫通部３５１が設けられている。このため、導通用貫通部３５１を含み且つ接続部１３と重なる非発電領域３０は、第３外方端縁１０５に近接する比較的小面積の領域となり、たとえば意匠表示部３５と比べて小さい領域である。したがって、光電変換層３のうち発電に寄与する発電領域３１の面積割合を高めることができる。 According to the present embodiment, as shown in FIGS. 148 and 149, the conductive through-hole 351 is provided at a position near the fifth outer retreat edge 302 of the photoelectric conversion layer 3 along the third outer end edge 105. It has been. For this reason, the non-power generation region 30 that includes the conduction through portion 351 and overlaps the connection portion 13 is a relatively small area close to the third outer end edge 105, for example, a region that is smaller than the design display portion 35. It is. Therefore, the area ratio of the power generation region 31 that contributes to power generation in the photoelectric conversion layer 3 can be increased.
　本実施形態においては、導通用貫通部３５１は、平面視円形状の貫通孔であり、その直径がたとえば４０μｍ程度である。これにより、導通用貫通部３５１やこれを含む発電領域３１を、有機薄膜太陽電池モジュールＡ１６および電子機器Ｂ１６の外観において目視によってほとんど確認できない程度の部位とすることが可能である。これは、有機薄膜太陽電池モジュールＡ１６および電子機器Ｂ１６の外観をより美麗に仕上げるのに適している。 In the present embodiment, the through-hole for conduction 351 is a through-hole having a circular shape in plan view, and its diameter is, for example, about 40 μm. Thereby, it is possible to make the conduction | electrical_connection penetration part 351 and the electric power generation area | region 31 containing this into a site | part of a grade which can hardly be visually confirmed in the external appearance of organic thin-film solar cell module A16 and electronic device B16. This is suitable for finishing the appearance of the organic thin film solar cell module A16 and the electronic device B16 more beautifully.
　第１集極部５３１および第２集極部５３２は、平面視において第２導電層２および光電変換層３と重なる位置に設けられている。このため、第１集極部５３１および第２集極部５３２は、第３外方端縁１０５から平面視において外方へと延出していない。これは、有機薄膜太陽電池モジュールＡ１６の接地面積を縮小するのに適している。 The first electrode collector 531 and the second electrode collector 532 are provided at positions overlapping the second conductive layer 2 and the photoelectric conversion layer 3 in plan view. For this reason, the first electrode collector 531 and the second electrode collector 532 do not extend outward from the third outer edge 105 in plan view. This is suitable for reducing the ground contact area of the organic thin film solar cell module A16.
　導通用貫通部３５１を利用して、第１集極部５３１へと電子を集約する構造であるため、意匠表示部３５を構成する意匠表示用貫通部３５０は、電子の集約に利用する必要が無い。このため、意匠表示部３５から電子を集約するための導通経路をたとえば第１導電層１に確保する必要が無い。これにより、意匠表示部３５から第３外方端縁１０５等に至る導通経路を省略することが可能である。したがって、有機薄膜太陽電池モジュールＡ１６および電子機器Ｂ１６の外観において、意匠表示部３５から第３外方端縁１０５が存在する端部へと延びる線が表れてしまうことを防止することができる。特に、意匠表示部３５は、外観において目立つ位置に設けられる場合が多く、第３外方端縁１０５等の端部から離間していることが一般的である。このような場合に、上述した外観に表れる線を省略できることは、有機薄膜太陽電池モジュールＡ１６および電子機器Ｂ１６の外観をより美麗に仕上げるのに好ましい。 Since it is a structure which collects electrons to the 1st collector part 531 using the penetration part 351 for conduction, it is necessary to use the penetration part 350 for design display which constitutes the design display part 35 for aggregation of electrons. No. For this reason, it is not necessary to ensure the conduction | electrical_connection path for collecting electrons from the design display part 35 in the 1st conductive layer 1, for example. Thereby, it is possible to omit the conduction path from the design display section 35 to the third outer edge 105 and the like. Therefore, in the external appearance of the organic thin-film solar cell module A16 and the electronic device B16, it can be prevented that a line extending from the design display portion 35 to the end portion where the third outer end edge 105 exists appears. In particular, the design display portion 35 is often provided at a conspicuous position in appearance, and is generally separated from the end portion such as the third outer end edge 105. In such a case, being able to omit the lines appearing in the above-described appearance is preferable for finishing the appearance of the organic thin-film solar cell module A16 and the electronic device B16 more beautifully.
　バイパス導電部５を設けることにより、第１導電層１に拡散してきた正孔を、第２バスバー部５１４を経由して第２集極部５３２へと導くことができる。バイパス導電部５は、第１導電層１よりも低抵抗の材料からなる。このため、バイパス導電部５によって、より低抵抗な導通経路が構成される。このような導通経路に光電変換層３によって発電された電力を導くことにより、通電による損失を抑制することができる。また、バイパス導電部５は、保護樹脂層４によって覆われている。このため、保護樹脂層４が外気等との反応によって劣化することを回避することができる。したがって、有機薄膜太陽電池モジュールＡ１６および電子機器Ｂ１６の通電部分の劣化を回避しつつ通電損失を抑制することができる。 By providing the bypass conductive portion 5, holes diffused in the first conductive layer 1 can be guided to the second electrode collector portion 532 via the second bus bar portion 514. The bypass conductive portion 5 is made of a material having a resistance lower than that of the first conductive layer 1. For this reason, the bypass conductive portion 5 forms a lower resistance conduction path. By guiding the power generated by the photoelectric conversion layer 3 to such a conduction path, loss due to energization can be suppressed. Further, the bypass conductive portion 5 is covered with the protective resin layer 4. For this reason, it can avoid that the protective resin layer 4 deteriorates by reaction with external air etc. Therefore, it is possible to suppress energization loss while avoiding deterioration of energized portions of the organic thin-film solar cell module A16 and the electronic device B16.
　図１４９に示すように、第７端縁５１１および第７外方端縁５１２は、第６端縁４６１および第６外方端縁４６２の内側に位置している。すなわち、バイパス導電部５は、保護樹脂層４によって完全に覆われている。これは、バイパス導電部５の保護に好ましい。 As shown in FIG. 149, the seventh end edge 511 and the seventh outer end edge 512 are located inside the sixth end edge 461 and the sixth outer end edge 462. That is, the bypass conductive portion 5 is completely covered with the protective resin layer 4. This is preferable for protecting the bypass conductive portion 5.
　第２端縁４５１および第２外方端縁４５２に隣接する領域において支持基板４１が露出している。この部位には、パッシベーション層４２や第１保護樹脂層４５が形成されていない。したがって、この部位をより透明に仕上げることが可能であり、表示部７０２をより鮮明に外観に表すことができる。 The support substrate 41 is exposed in a region adjacent to the second edge 451 and the second outer edge 452. In this portion, the passivation layer 42 and the first protective resin layer 45 are not formed. Therefore, it is possible to finish this portion more transparent, and the display portion 702 can be expressed more clearly.
　第２端縁４５１および第１端縁４２１に隣接する領域のうち第２バスバー部５１４によって覆われた僅かな領域を除いて、支持基板４１には第１導電層１が形成されていない。第１導電層１は、ＩＴＯからなるものの、光線のあたり具合によっては、うっすらと着色されたものとして視認される。本実施形態においては、表示部７０２を外観に表すための領域をことさらに透明に仕上げることが可能であり、より美麗な外観を実現することができる。 The first conductive layer 1 is not formed on the support substrate 41 except for a small area covered by the second bus bar portion 514 in areas adjacent to the second edge 451 and the first edge 421. Although the first conductive layer 1 is made of ITO, the first conductive layer 1 is visually recognized as being slightly colored depending on how light hits. In the present embodiment, it is possible to finish the region for displaying the display unit 702 in an even more transparent manner, and a more beautiful appearance can be realized.
　光電変換層３の第５内方退避端縁３０１および第２導電層２の第４内方退避端縁２０１が、第１端縁４２１および第２端縁４５１と離間していることにより、第２導電層２および光電変換層３がバイパス導電部５と不当に導通することを回避することができる。また、第４内方退避端縁２０１および第５内方退避端縁３０１と第１端縁４２１および第２端縁４５１との間にパッシベーション層４２が介在していることにより、第２導電層２および光電変換層３とバイパス導電部５の第２バスバー部５１４とがショートすることをより確実に防止可能である。 The fifth inward retracting edge 301 of the photoelectric conversion layer 3 and the fourth inward retracting edge 201 of the second conductive layer 2 are separated from the first end edge 421 and the second end edge 451, thereby The two conductive layers 2 and the photoelectric conversion layer 3 can be prevented from being unduly conducted with the bypass conductive portion 5. Further, since the passivation layer 42 is interposed between the fourth inner retracting edge 201 and the fifth inner retracting edge 301 and the first end edge 421 and the second end edge 451, the second conductive layer 2 and the photoelectric conversion layer 3 and the second bus bar portion 514 of the bypass conductive portion 5 can be prevented more reliably.
　第１保護樹脂層４５をマスクとして用いたパターニングを絶縁膜４２０に施すことにより、第１保護樹脂層４５と同形状のパッシベーション層４２を形成することができる。すなわち、紫外線硬化樹脂などの形状形成に優れた材質を用いて第１保護樹脂層４５を形成すれば、必ずしも形状形成に優れていない材質からなるパッシベーション層４２を所望の形状に仕上げることができる。なお、第１保護樹脂層４５は、パッシベーション層４２を形成した後に除去してもよい。ただし、第１保護樹脂層４５を残存させた場合、水分やパーティクル等の第１導電層１、第２導電層２および光電変換層３等への侵入を防止する効果や、有機薄膜太陽電池モジュールＡ１６の強度向上を図る効果が期待できる。 The passivation layer 42 having the same shape as the first protective resin layer 45 can be formed by patterning the insulating film 420 using the first protective resin layer 45 as a mask. That is, if the first protective resin layer 45 is formed using a material excellent in shape formation such as an ultraviolet curable resin, the passivation layer 42 made of a material not necessarily excellent in shape formation can be finished in a desired shape. Note that the first protective resin layer 45 may be removed after the passivation layer 42 is formed. However, when the first protective resin layer 45 is left, the effect of preventing moisture and particles from entering the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3, etc., and the organic thin film solar cell module The effect of improving the strength of A16 can be expected.
　図１７１～図１８３は、本発明の変形例および他の実施形態を示している。なお、これらの図において、上記実施形態と同一または類似の要素には、上記実施形態と同一の符号を付しており、適宜説明を省略する。 FIGS. 171 to 183 show a modified example and other embodiments of the present invention. In these drawings, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment, and description thereof will be omitted as appropriate.
　図１７１は、有機薄膜太陽電池モジュールＡ１６の変形例を示している。本変形例においては、導通用貫通部３５１が、平面視において細長形状とされている。導通用貫通部３５１の長手方向は、接続部端縁１３１と略平行であり、接続部１３の長手方向と一致している。このような変形例によっても、光電変換層３のうち発電に寄与する面積割合を高める事ができる。 FIG. 171 shows a modification of the organic thin film solar cell module A16. In this modification, the conduction through portion 351 has an elongated shape in plan view. The longitudinal direction of the conduction through portion 351 is substantially parallel to the connection portion edge 131 and coincides with the longitudinal direction of the connection portion 13. Also by such a modification, the area ratio which contributes to electric power generation among the photoelectric converting layers 3 can be raised.
　図１７２～図１７５は、本発明の第１８実施形態に基づく有機薄膜太陽電池モジュールを示している。本実施形態の有機薄膜太陽電池モジュールＡ１７は、第１導電層１、第２導電層２、光電変換層３、支持基板４１、パッシベーション層４２、保護樹脂層４およびバイパス導電部５を備えている。有機薄膜太陽電池モジュールＡ１７の平面視形状は特に限定されず、図示された例は、上述した有機薄膜太陽電池モジュールＡ１６と同様の平面視形状である場合の例である。図１７２は、有機薄膜太陽電池モジュールＡ１７を示す要部拡大底面図である。図１７３は、図１７２のＣＬＸＸＩＩＩ－ＣＬＸＸＩＩＩ線に沿う要部拡大断面図である。図１７４は、図１７２のＣＬＸＸＩＶ－ＣＬＸＸＩＶ線に沿う要部拡大断面図である。図１７５は、第１保護樹脂層４５およびバイパス導電部５を省略した要部拡大平面図である。 FIGS. 172 to 175 show an organic thin film solar cell module according to an eighteenth embodiment of the present invention. The organic thin-film solar cell module A17 of this embodiment includes a first conductive layer 1, a second conductive layer 2, a photoelectric conversion layer 3, a support substrate 41, a passivation layer 42, a protective resin layer 4, and a bypass conductive portion 5. . The planar view shape of the organic thin film solar cell module A17 is not particularly limited, and the illustrated example is an example in the case of the same planar view shape as the organic thin film solar cell module A16 described above. FIG. 172 is an essential part enlarged bottom view showing the organic thin film solar cell module A17. FIG. 173 is an enlarged cross-sectional view of a main part taken along the line CLXXIII-CLXXIII of FIG. FIG. 174 is an enlarged cross-sectional view of a main part taken along line CLXXIV-CLXXIV in FIG. FIG. 175 is an enlarged plan view of a main part in which the first protective resin layer 45 and the bypass conductive portion 5 are omitted.
　本実施形態のパッシベーション層４２の第１端縁４２１および第１外方端縁４２２は、図１７３および図１７４に示すように、凹凸形状の端面となっている。また、第１端縁４２１は全体として、支持基板４１の厚さ方向において支持基板４１から離間するほど平面視において第３端縁１０１から離間する向きに傾いている。また、第１外方端縁４２２は全体として、支持基板４１の厚さ方向において支持基板４１から離間するほど第１導電層１の第２延出部１０３から離間する向きに傾いている。また、本実施形態の第１端縁４２１は、図１７５に示すように、平面視において第３端縁１０１から離間した非直線状の形状である。第１端縁４２１は、たとえば複数の折れ線や曲線が結合された形状である。第１外方端縁４２２も同様に、平面視において被直線状の形状である。 The first edge 421 and the first outer edge 422 of the passivation layer 42 of the present embodiment are concave and convex end faces as shown in FIGS. 173 and 174. Further, as a whole, the first edge 421 is inclined in a direction away from the third edge 101 in plan view as the distance from the support substrate 41 in the thickness direction of the support substrate 41 is increased. Further, the first outer end edge 422 as a whole is inclined in a direction away from the second extending portion 103 of the first conductive layer 1 as it is separated from the support substrate 41 in the thickness direction of the support substrate 41. In addition, as shown in FIG. 175, the first end edge 421 of the present embodiment has a non-linear shape spaced from the third end edge 101 in plan view. The first end edge 421 has, for example, a shape in which a plurality of broken lines and curves are combined. Similarly, the first outer end edge 422 has a linear shape in plan view.
　バイパス導電部５の１つの第２バスバー部５１４は、パッシベーション層４２の第１端縁４２１を一部を除き、略全長にわたって覆っている。この第２バスバー部５１４は、第１導電層１のうち第３端縁１０１と第１端縁４２１との間に位置する第１延出部１０４を覆っている。また、この第２バスバー部５１４の第７端縁５１１は、平面視において第３端縁１０１に対して第１端縁４２１とは反対側に位置している。これにより、この第２バスバー部５１４は、支持基板４１に直接接している。他方の第２バスバー部５１４は、パッシベーション層４２の第１外方端縁４２２を全長にわたって覆っている。この第２バスバー部５１４は、第１導電層１の第２延出部１０３を覆っている。また、この第２バスバー部５１４の第７外方端縁５１２は、平面視において第３外方端縁１０５に対して第１外方端縁４２２とは反対側に位置している。これにより、この第２バスバー部５１４は、支持基板４１に直接接している。このような構成により、２つの第２バスバー部５１４は、それぞれが第１導電層１と導通している。 One second bus bar portion 514 of the bypass conductive portion 5 covers substantially the entire length except for a part of the first edge 421 of the passivation layer 42. The second bus bar portion 514 covers the first extending portion 104 located between the third end edge 101 and the first end edge 421 in the first conductive layer 1. Further, the seventh end edge 511 of the second bus bar portion 514 is located on the side opposite to the first end edge 421 with respect to the third end edge 101 in plan view. Thereby, the second bus bar portion 514 is in direct contact with the support substrate 41. The other second bus bar portion 514 covers the first outer end edge 422 of the passivation layer 42 over the entire length. The second bus bar portion 514 covers the second extending portion 103 of the first conductive layer 1. Further, the seventh outer end edge 512 of the second bus bar portion 514 is located on the opposite side of the first outer end edge 422 with respect to the third outer end edge 105 in plan view. Thereby, the second bus bar portion 514 is in direct contact with the support substrate 41. With such a configuration, each of the two second bus bar portions 514 is electrically connected to the first conductive layer 1.
　第１バスバー部５１３は、第１導電層１の接続部１３の接続延出部１３２を覆っている。また、第１バスバー部５１３の第７端縁５１１は、平面視において第３端縁１０１に対して、第１端縁４２１とは反対側に位置している。これにより、第１バスバー部５１３は、支持基板４１に直接接している。 The first bus bar portion 513 covers the connection extension portion 132 of the connection portion 13 of the first conductive layer 1. Further, the seventh end edge 511 of the first bus bar portion 513 is located on the opposite side to the first end edge 421 with respect to the third end edge 101 in plan view. Thus, the first bus bar portion 513 is in direct contact with the support substrate 41.
　本実施形態の保護樹脂層４は、第１保護樹脂層４５のみを有している。図１７３および図１７４に示すように、第１保護樹脂層４５は、パッシベーション層４２およびバイパス導電部５を覆っており、たとえば紫外線硬化樹脂からなる。また、第１保護樹脂層４５は、有機薄膜太陽電池モジュールＡ１７と上述した表示部７０２とを接合するための透明な接合層を兼ねていてもよい。図示された例においては、第２端縁４５１の第２端縁４５１は、平面視において第７端縁５１１に対して第１端縁４２１とは反対側に位置している。第１保護樹脂層４５の第２外方端縁４５２は、平面視において第７外方端縁５１２に対して第１外方端縁４２２とは反対側に位置している。これにより、第１保護樹脂層４５は、支持基板４１に直接接する部分を有する。また、第１保護樹脂層４５は、パッシベーション層４２の表面４２３のうちバイパス導電部５から露出した部分を覆っている。 The protective resin layer 4 of the present embodiment has only the first protective resin layer 45. As shown in FIGS. 173 and 174, the first protective resin layer 45 covers the passivation layer 42 and the bypass conductive portion 5, and is made of, for example, an ultraviolet curable resin. Moreover, the 1st protective resin layer 45 may serve as the transparent joining layer for joining organic thin-film solar cell module A17 and the display part 702 mentioned above. In the illustrated example, the second end edge 451 of the second end edge 451 is located on the opposite side of the first end edge 421 with respect to the seventh end edge 511 in plan view. The second outer end edge 452 of the first protective resin layer 45 is located on the opposite side of the first outer end edge 422 with respect to the seventh outer end edge 512 in plan view. Thus, the first protective resin layer 45 has a portion that directly contacts the support substrate 41. Further, the first protective resin layer 45 covers a portion of the surface 423 of the passivation layer 42 that is exposed from the bypass conductive portion 5.
　次に、有機薄膜太陽電池モジュールＡ１７の製造方法の一例について以下に説明する。なお、以下の説明において参照する図においては、理解の便宜上、図１７３および図１７４とは、天地逆に表されている。 Next, an example of a method for manufacturing the organic thin film solar cell module A17 will be described below. In the drawings referred to in the following description, for convenience of understanding, FIGS. 173 and 174 are shown upside down.
　まず、図１５８に示した支持基板４１を用意する。そして、支持基板４１の片面にたとえばスパッタ法などの一般的な手法によりＩＴＯからなる第１導電膜１０を積層する。次に、図１７６に示すように、第１導電膜１０にパターニングを施す。これにより、第１導電膜１０には、スリット１７、スリット１９１、スリット１９２、スリット１９３等が形成される。第１導電膜１０のパターニングは、たとえばレーザーパターニングよってなされる。このレーザーパターニングに用いられるレーザー光Ｌｚ１は、第１導電膜１０をレーザーパターニング可能なものであれば特に限定されず、たとえばＩＲレーザー光を用いることができる。スリット１９１を構成する第１導電膜１０の端縁のうち図示された第２導電層２および光電変換層３側に位置するものは、第３端縁１０１となる。第１導電膜１０のうち第５内方退避端縁３０１とスリット１９１との間の部分は、第１延出部１０４となる。スリット１９２を構成する第１導電膜１０の端縁のうち図示された第２導電層２および光電変換層３側に位置するものは、第３外方端縁１０５となる。第１導電膜１０のうちスリット１９２と光電変換層３の第５外方退避端縁３０２との間の部分は、第２延出部１０３となる。スリット１７とスリット１９２とによって区画された部分は、接続部１３となる。 First, the support substrate 41 shown in FIG. 158 is prepared. Then, the first conductive film 10 made of ITO is laminated on one side of the support substrate 41 by a general method such as sputtering. Next, as shown in FIG. 176, the first conductive film 10 is patterned. As a result, a slit 17, a slit 191, a slit 192, a slit 193, and the like are formed in the first conductive film 10. The patterning of the first conductive film 10 is performed by laser patterning, for example. The laser beam Lz1 used for this laser patterning is not particularly limited as long as the first conductive film 10 can be subjected to laser patterning. For example, IR laser beam can be used. Of the edges of the first conductive film 10 constituting the slit 191, the one located on the second conductive layer 2 and the photoelectric conversion layer 3 side shown is the third edge 101. A portion of the first conductive film 10 between the fifth inward retracting edge 301 and the slit 191 becomes the first extending portion 104. Of the edges of the first conductive film 10 constituting the slit 192, the one located on the second conductive layer 2 and the photoelectric conversion layer 3 side shown is the third outer edge 105. A portion of the first conductive film 10 between the slit 192 and the fifth outer retraction edge 302 of the photoelectric conversion layer 3 becomes the second extension portion 103. A portion defined by the slit 17 and the slit 192 becomes the connection portion 13.
　次いで、第１導電膜１０上に有機膜を形成し、この有機膜にたとえばＧｒｅｅｎレーザー光を用いたレーザーパターニングを施すことにより、図１７７に示す、光電変換層３を形成する。 Next, an organic film is formed on the first conductive film 10, and laser patterning using, for example, Green laser light is performed on the organic film, thereby forming the photoelectric conversion layer 3 shown in FIG. 177.
　次いで、図１７８に示すように、第２導電層２を形成し、図１７９に示すように、絶縁膜４２０を形成する。絶縁膜４２０の形成は、たとえばプラズマＣＶＤ法によってＳｉＮまたはＳｉＯＮなどの膜を支持基板４１、第１導電膜１０、光電変換層３および第２導電層２上に形成することにより行う。 Next, as shown in FIG. 178, the second conductive layer 2 is formed, and as shown in FIG. 179, the insulating film 420 is formed. The insulating film 420 is formed by forming a film such as SiN or SiON on the support substrate 41, the first conductive film 10, the photoelectric conversion layer 3, and the second conductive layer 2 by, for example, plasma CVD.
　次いで、図１７９に示すように、第１導電膜１０、第２導電層２および光電変換層３を覆う絶縁膜４２０を形成する。次いで、絶縁膜４２０を部分的に除去することによる第１端縁４２１を有するパッシベーション層４２の形成および第１導電膜１０の部分的な除去による第１導電層１の形成を含み、第１端縁４２１に隣接する領域において支持基板４１を露出させる工程を行う。本実施形態においては、支持基板４１を露出させる工程は、図１８０に示すように、絶縁膜４２０を透して第１導電膜１０にレーザー光Ｌｚ２を照射することにより、第１導電膜１０および絶縁膜４２０を部分的に除去する処理を含む。同図において、第１導電膜１０のうち相対的に濃い複数の離散点からなるハッチングが付された部分は、レーザー光Ｌｚ２が照射される部分を表している。また、絶縁膜４２０のうち相対的に薄い複数の離散点からなるハッチングが付された部分は、レーザー光Ｌｚ２の照射に起因して除去される部分を表している。なお、レーザー光Ｌｚ２を用いた手法に限定されず、たとえばエッチングを用いた手法を選択してもよい。 Next, as shown in FIG. 179, an insulating film 420 covering the first conductive film 10, the second conductive layer 2, and the photoelectric conversion layer 3 is formed. Then, forming the passivation layer 42 having the first edge 421 by partially removing the insulating film 420 and forming the first conductive layer 1 by partially removing the first conductive film 10, A step of exposing the support substrate 41 in a region adjacent to the edge 421 is performed. In the present embodiment, the step of exposing the support substrate 41 is performed by irradiating the first conductive film 10 with laser light Lz2 through the insulating film 420, as shown in FIG. A process of partially removing the insulating film 420 is included. In the figure, a hatched portion of a plurality of relatively dark discrete points in the first conductive film 10 represents a portion irradiated with the laser light Lz2. In addition, a hatched portion of a plurality of relatively thin discrete points in the insulating film 420 represents a portion that is removed due to irradiation with the laser light Lz2. Note that the method is not limited to the method using the laser beam Lz2, and for example, a method using etching may be selected.
　より具体的には、絶縁膜４２０を透して、第１導電膜１０のうちスリット１９１およびスリット１９２を挟んで図示された第２導電層２および光電変換層３とは反対側に位置する部分に、レーザー光Ｌｚ２を照射する。レーザー光Ｌｚ２としては、たとえば波長が１，０６４ｎｍ程度のＩＲレーザー光が選択される。このレーザー光Ｌｚ２が照射された第１導電膜１０の部分は、顕著なエネルギー投入によって瞬時に揮発する挙動を示す。 More specifically, a portion of the first conductive film 10 that is located on the opposite side of the second conductive layer 2 and the photoelectric conversion layer 3 that are illustrated across the slit 191 and the slit 192 through the insulating film 420. Are irradiated with laser light Lz2. As the laser beam Lz2, for example, an IR laser beam having a wavelength of about 1,064 nm is selected. The portion of the first conductive film 10 irradiated with the laser light Lz2 exhibits a behavior that volatilizes instantaneously when significant energy is applied.
　一方、上述したレーザー光Ｌｚ２の波長は、第１導電膜１０に比べて絶縁膜４２０が吸収しづらいものが選択されている。このため、絶縁膜４２０は、レーザー光Ｌｚ２によって直接に破壊されるものではない。しかし、絶縁膜４２０のうち第１導電膜１０と接する部分は、第１導電膜１０を介して支持基板４１によって支持されている。第１導電膜１０がレーザー光Ｌｚ２の照射によって揮発すると、絶縁膜４２０一部は、支持基板４１によって支持されないものとなる。また、レーザー光Ｌｚ２が照射された第１導電膜１０の部分（図中において相対的に濃い複数の離散点からなるハッチングが付された部分）に重なっている絶縁膜４２０は、第１導電膜１０が揮発したことによる圧力によってその一部が飛散する。 On the other hand, the wavelength of the laser beam Lz2 described above is selected such that the insulating film 420 is less likely to absorb than the first conductive film 10. For this reason, the insulating film 420 is not directly destroyed by the laser beam Lz2. However, the portion of the insulating film 420 that contacts the first conductive film 10 is supported by the support substrate 41 via the first conductive film 10. When the first conductive film 10 is volatilized by irradiation with the laser beam Lz2, a part of the insulating film 420 is not supported by the support substrate 41. Further, the insulating film 420 overlapping the portion of the first conductive film 10 irradiated with the laser light Lz2 (the hatched portion including a plurality of relatively dark discrete points in the drawing) is the first conductive film. Part of it is scattered by the pressure due to volatilization of 10.
　また、発明者の研究の結果、絶縁膜４２０のうち、レーザー光Ｌｚ２が照射された第１導電膜１０の部分に隣接する部分は、第１導電膜１０の揮発の影響によって飛散することが判明した。図１８０においては、絶縁膜４２０のうちレーザー光Ｌｚ２の照射に起因して飛散する部分を、相対的に薄い複数の離散点からなるハッチングを付している。本実施形態においては、絶縁膜４２０のうち飛散する部分は、スリット１９１およびスリット１９２を超えて、第２導電層２および光電変換層３側に存在する。ただし、第２導電層２および光電変換層３の一部を露出させる程度に、パッシベーション層４２が破壊されないように、スリット１９１およびスリット１９２の大きさや位置、およびレーザー光Ｌｚ２の照射範囲や出力等を適宜調節している。この結果、絶縁膜４２０のうちスリット１９１側に位置する端縁が第１端縁４２１となり、スリット１９２側に位置する端縁が第１外方端縁４２２となる。また、第１導電膜１０のうちスリット１９１に隣接する複数の離散点からなるハッチング部分は、レーザー光Ｌｚ２の照射により除去される。このため、第１導電膜１０のうちスリット１９１に対して平面視において光電変換層３側に位置する端縁が、第３端縁１０１となり、第１導電膜１０のうちスリット１９２に対して平面視において光電変換層３側に位置する端縁が、第３外方端縁１０５となる。また、第１導電膜１０のうちスリット１９２に隣接する複数の離散点からなるハッチング部分は、レーザー光Ｌｚ２の照射により除去される。また、スリット１９１およびスリット１９２に隣接する絶縁膜４２０の一部がレーザー光Ｌｚ２の照射に伴って飛散することにより、第１導電膜１０のうちスリット１９１およびスリット１９２に隣接する一部が、パッシベーション層４２から露出する。この部分が、第１延出部１０４および第２延出部１０３となる。 As a result of the inventors' research, it has been found that a portion of the insulating film 420 adjacent to the portion of the first conductive film 10 irradiated with the laser light Lz2 is scattered due to the volatility of the first conductive film 10. did. In FIG. 180, the portion of the insulating film 420 that is scattered due to the irradiation of the laser beam Lz2 is hatched with a plurality of relatively thin discrete points. In the present embodiment, the scattered portion of the insulating film 420 exists on the second conductive layer 2 and photoelectric conversion layer 3 side beyond the slit 191 and the slit 192. However, the size and position of the slit 191 and the slit 192, the irradiation range and output of the laser beam Lz2, etc. so that the passivation layer 42 is not destroyed to such an extent that the second conductive layer 2 and the photoelectric conversion layer 3 are partially exposed. Is adjusted accordingly. As a result, the edge located on the slit 191 side of the insulating film 420 becomes the first edge 421, and the edge located on the slit 192 side becomes the first outer edge 422. Moreover, the hatching part which consists of several discrete points adjacent to the slit 191 among the 1st electrically conductive films 10 is removed by irradiation of the laser beam Lz2. For this reason, the edge located in the photoelectric conversion layer 3 side in planar view with respect to the slit 191 in the first conductive film 10 becomes the third edge 101, and the first conductive film 10 is planar with respect to the slit 192. The edge located on the photoelectric conversion layer 3 side when viewed is the third outer edge 105. Moreover, the hatching part which consists of a some discrete point adjacent to the slit 192 among the 1st electrically conductive films 10 is removed by irradiation of the laser beam Lz2. In addition, a part of the insulating film 420 adjacent to the slit 191 and the slit 192 is scattered with the irradiation of the laser light Lz2, so that a part of the first conductive film 10 adjacent to the slit 191 and the slit 192 is passivation. Exposed from layer 42. This portion becomes the first extension portion 104 and the second extension portion 103.
　以上に述べたレーザー光Ｌｚ２の照射によって、第１導電膜１０および絶縁膜４２０の部分的な除去を行うことにより、図１８１に示すように、第１端縁４２１および第１外方端縁４２２を有するパッシベーション層４２が形成される。また、第１端縁４２１および第１外方端縁４２２から延出する部分を有する第１導電層１が形成される。第１導電層１には、第３端縁１０１および第２延出部１０３が形成される。また、スリット１７によって区画された接続部１３が形成される。なお、図１８０に示した工程の後に、支持基板４１上に残存した第１導電膜１０等の除去を目的として、たとえば王水を用いた洗浄処理を行ってもよい。 By partially removing the first conductive film 10 and the insulating film 420 by the irradiation with the laser beam Lz2 described above, as shown in FIG. 181, the first edge 421 and the first outer edge 422 are obtained. A passivation layer 42 is formed. Further, the first conductive layer 1 having portions extending from the first end edge 421 and the first outer end edge 422 is formed. In the first conductive layer 1, a third end edge 101 and a second extending portion 103 are formed. Moreover, the connection part 13 partitioned by the slit 17 is formed. In addition, after the process shown in FIG. 180, for example, a cleaning process using aqua regia may be performed for the purpose of removing the first conductive film 10 and the like remaining on the support substrate 41.
　次いで、図１８２に示すようにバイパス導電部５を形成する。バイパス導電部５の形成は、第１導電層１のうちパッシベーション層４２から延出した部分と、パッシベーション層４２の第１端縁４２１および第１外方端縁４２２とを覆うようにして行う。また、バイパス導電部５は、支持基板４１に直接触れるように形成されることが好ましい。これにより、バスバー部５１および連絡部５２を有するバイパス導電部５が得られる。 Next, as shown in FIG. 182, the bypass conductive portion 5 is formed. The bypass conductive portion 5 is formed so as to cover a portion of the first conductive layer 1 extending from the passivation layer 42 and the first edge 421 and the first outer edge 422 of the passivation layer 42. The bypass conductive portion 5 is preferably formed so as to directly touch the support substrate 41. Thereby, the bypass conductive part 5 having the bus bar part 51 and the connecting part 52 is obtained.
　この後は、バイパス導電部５およびパッシベーション層４２を覆うように、第１保護樹脂層４５（保護樹脂層４）を形成する。第１保護樹脂層４５の形成は、たとえば紫外線硬化樹脂を含む液体樹脂材料をスクリーン印刷によってパッシベーション層４２上に塗布し、紫外線を照射することによって硬化させる。以上の工程を経ることにより、図１７２～図１７４に示す有機薄膜太陽電池モジュールＡ１７が完成する。 Thereafter, the first protective resin layer 45 (protective resin layer 4) is formed so as to cover the bypass conductive portion 5 and the passivation layer 42. The first protective resin layer 45 is formed by, for example, applying a liquid resin material containing an ultraviolet curable resin on the passivation layer 42 by screen printing and irradiating it with ultraviolet rays. Through the above steps, the organic thin-film solar cell module A17 shown in FIGS. 172 to 174 is completed.
　このような実施形態によっても、光電変換層３の発電領域３１の面積割合を高めることができる。また、図１７３および図１７４に示すように、バイパス導電部５の第２バスバー部５１４は、第１導電層１の第１延出部１０４および第２延出部１０３を覆っている。また、第１バスバー部５１３は、第１導電層１の接続延出部１３２を覆っている。これにより、第１導電層１とバイパス導電部５との導通面積を拡大することが可能であり、低抵抗化に好ましい。第１端縁４２１および第１外方端縁４２２が、凹凸形状であることにより、第１端縁４２１および第１外方端縁４２２とバイパス導電部５の第１バスバー部５１３および第２バスバー部５１４との接合強度を高めることが可能である。 Also in such an embodiment, the area ratio of the power generation region 31 of the photoelectric conversion layer 3 can be increased. As shown in FIGS. 173 and 174, the second bus bar portion 514 of the bypass conductive portion 5 covers the first extension portion 104 and the second extension portion 103 of the first conductive layer 1. The first bus bar portion 513 covers the connection extension portion 132 of the first conductive layer 1. Thereby, the conduction area between the first conductive layer 1 and the bypass conductive portion 5 can be increased, which is preferable for reducing the resistance. Since the first end edge 421 and the first outer end edge 422 are concave and convex, the first end edge 421 and the first outer end edge 422 and the first bus bar portion 513 and the second bus bar of the bypass conductive portion 5 are provided. The bonding strength with the portion 514 can be increased.
　図１８０に示したように、第１導電層１にレーザー光Ｌｚ２を照射することによって生じる第１導電層１の揮発を利用して、パッシベーション層４２を除去している。このため、パッシベーション層４２を除去するための専用のレーザー光や薬剤等は不要である。これは、製造コストの低減や制造時間の短縮に好ましい。レーザー光Ｌｚ２としてＩＲレーザー光を用いることにより、絶縁膜４２０を透過して第１導電膜１０へとレーザー光Ｌｚ２を効率よく照射することが可能である。また、レーザー光Ｌｚ２としてＩＲレーザー光を用いることにより、パッシベーション層４２の第１端縁４２１および第１外方端縁４２２を凹凸形状に仕上げることができるという利点がある。なお、絶縁膜４２０の材質の一例であるＳｉＮは、４００ｎｍより長波長の光を透過させる。このため、絶縁膜４２０がＳｉＮからなる場合、レーザー光Ｌｚ２として波長が５３２ｎｍであるＧｒｅｅｎレーザー光を用いてもよい。一方で、レーザー光Ｌｚ２として波長が３５５ｎｍであるＵＶレーザー光を用いた場合には、絶縁膜４２０と第１導電膜１０とがレーザー光Ｌｚ２を吸収するため、これらを一括して除去することができる。 As shown in FIG. 180, the passivation layer 42 is removed by utilizing volatilization of the first conductive layer 1 generated by irradiating the first conductive layer 1 with the laser light Lz2. Therefore, there is no need for a dedicated laser beam or drug for removing the passivation layer 42. This is preferable for reducing manufacturing costs and manufacturing time. By using IR laser light as the laser light Lz2, it is possible to efficiently irradiate the first conductive film 10 with the laser light Lz2 through the insulating film 420. Further, by using IR laser light as the laser light Lz2, there is an advantage that the first edge 421 and the first outer edge 422 of the passivation layer 42 can be finished in an uneven shape. Note that SiN, which is an example of the material of the insulating film 420, transmits light having a wavelength longer than 400 nm. For this reason, when the insulating film 420 is made of SiN, Green laser light having a wavelength of 532 nm may be used as the laser light Lz2. On the other hand, when UV laser light having a wavelength of 355 nm is used as the laser light Lz2, the insulating film 420 and the first conductive film 10 absorb the laser light Lz2, and therefore these can be removed at once. it can.
　絶縁膜４２０および第１導電膜１０の部分的な除去は、レーザー光Ｌｚ２を用いて行う。レーザー光Ｌｚ２は、照射する領域をより正確に制御することが可能である。したがって、絶縁膜４２０および第１導電膜１０のうち所望の箇所を除去するのに適している。 The partial removal of the insulating film 420 and the first conductive film 10 is performed using a laser beam Lz2. The laser light Lz2 can control the irradiation region more accurately. Therefore, the insulating film 420 and the first conductive film 10 are suitable for removing a desired portion.
　絶縁膜４２０の部分的な除去は、レーザー光Ｌｚ２が照射された第１導電膜１０に隣接する絶縁膜４２０が破壊される挙動を利用する。これにより、図１８１においてパッシベーション層４２から露出する第１導電層１の部分は、レーザー光Ｌｚ２が照射されていないにもかかわらず、当該部分を覆っていた絶縁膜４２０の部分が除去されている。このため、第１導電層１のうちパッシベーション層４２から露出する部分を不当に破壊することを回避しつつ、絶縁膜４２０を適切に除去することができる。 The partial removal of the insulating film 420 utilizes a behavior in which the insulating film 420 adjacent to the first conductive film 10 irradiated with the laser light Lz2 is destroyed. As a result, the portion of the insulating film 420 covering the portion of the first conductive layer 1 exposed from the passivation layer 42 in FIG. 181 is removed even though the laser beam Lz2 is not irradiated. . For this reason, the insulating film 420 can be appropriately removed while avoiding unduly destroying the portion of the first conductive layer 1 exposed from the passivation layer 42.
　第１導電膜１０にスリット１９１およびスリット１９２を設けておくことにより、第１導電膜１０の揮発の影響を受ける絶縁膜４２０の領域が、不当に広域にわたってしまうことを回避することが可能である。また、スリット１９１およびスリット１９２を設けておくことにより、図１８０および図１８１に示した第１導電膜１０を部分的に除去する工程において、除去されるべき領域に第１導電膜１０の一部が残存したとしても、この残存部分と第１導電層１とが意図せず導通してしまうことを回避することができる。また、第１導電膜１０のうちスリット１９２を挟んで光電変換層３とは反対側に位置する部分は、除去されることなく、有機薄膜太陽電池モジュールＡ１７の一部として残存してもよい。この部分は、スリット１９２が設けられていることにより、第１導電層１と導通することが防止されている。また、この部分の除去を省略すれば、製造時間を短縮することができる。なお、スリット１９１およびスリット１９２を設ける構成は好適例であり、これらを設けない構成であってもよい。 By providing the slit 191 and the slit 192 in the first conductive film 10, it is possible to prevent the region of the insulating film 420 affected by the volatilization of the first conductive film 10 from being unduly wide. . Further, by providing the slit 191 and the slit 192, in the step of partially removing the first conductive film 10 shown in FIGS. 180 and 181, a part of the first conductive film 10 is formed in the region to be removed. Even if this remains, it can be avoided that the remaining portion and the first conductive layer 1 are unintentionally conducted. Moreover, the part located in the other side of the photoelectric converting layer 3 across the slit 192 among the 1st electrically conductive films 10 may remain | survive as a part of organic thin-film solar cell module A17, without removing. This portion is prevented from conducting to the first conductive layer 1 by providing the slit 192. Further, if the removal of this portion is omitted, the manufacturing time can be shortened. In addition, the structure which provides the slit 191 and the slit 192 is a suitable example, and the structure which does not provide these may be sufficient.
　図１８３は、本発明の第１８実施形態に基づく有機薄膜太陽電池モジュールを示している。本実施形態の有機薄膜太陽電池モジュールＡ１８においては、スリット１７の両端１７１は、第１導電層１の第３端縁１０１に到達している。すなわち、接続部１３は、表示用開口１８１に対向する位置に設けられている。言い換えると、接続部１３は、平面視において表示用開口１８１と意匠表示部３５との間に配置されている。表示用開口１８１に対向する第２バスバー部５１４には、迂回部５１４１が設けられている。また、本実施形態のバイパス導電部５は、連絡部５２１を有する。連絡部５２１は、第１バスバー部５１３と第１集極部５３１とを繋いでいる。これにより、第１集極部５３１は、第１バスバー部５１３から離間した位置に配置されている。図示された例においては、第２集極部５３２は、表示用開口１８１からの距離が第１集極部５３１と同じとなるように配置されている。 FIG. 183 shows an organic thin-film solar cell module according to the eighteenth embodiment of the present invention. In the organic thin film solar cell module A <b> 18 of this embodiment, both ends 171 of the slit 17 reach the third end edge 101 of the first conductive layer 1. That is, the connecting portion 13 is provided at a position facing the display opening 181. In other words, the connection portion 13 is disposed between the display opening 181 and the design display portion 35 in plan view. A bypass portion 5141 is provided in the second bus bar portion 514 facing the display opening 181. Further, the bypass conductive portion 5 of the present embodiment has a connecting portion 521. The communication part 521 connects the first bus bar part 513 and the first electrode collecting part 531. As a result, the first electrode collecting portion 531 is disposed at a position separated from the first bus bar portion 513. In the illustrated example, the second electrode collector 532 is disposed such that the distance from the display opening 181 is the same as that of the first electrode collector 531.
　本実施形態によっても、光電変換層３の発電領域３１の面積割合を高めることができる。また、接続部１３が表示用開口１８１に対向する位置に設けられているものの、第１集極部５３１は、平面視において第２導電層２および光電変換層３と重なる位置に配置されている。このため、第１集極部５３１は、表示用開口１８１に延出しておらず、表示部７０２の表示を妨げる事態を回避することができる。 Also in this embodiment, the area ratio of the power generation region 31 of the photoelectric conversion layer 3 can be increased. In addition, although the connection portion 13 is provided at a position facing the display opening 181, the first electrode collecting portion 531 is disposed at a position overlapping the second conductive layer 2 and the photoelectric conversion layer 3 in plan view. . For this reason, the first electrode collector 531 does not extend to the display opening 181, and a situation in which the display of the display unit 702 is hindered can be avoided.
　本発明に係る有機薄膜太陽電池モジュールおよび電子機器は、上述した実施形態に限定されるものではない。本発明に係る有機薄膜太陽電池モジュールおよび電子機器の具体的な構成は、種々に設計変更自在である。 The organic thin film solar cell module and the electronic device according to the present invention are not limited to the above-described embodiments. The specific configurations of the organic thin-film solar cell module and the electronic device according to the present invention can be variously changed in design.
　本発明に係る電子機器は、携帯型電話端末をはじめ、太陽光発電を利用可能な様々な電子機器に適用することが可能であり、たとえば腕時計、電子計算機などが挙げられる。 The electronic device according to the present invention can be applied to various electronic devices that can use solar power generation, such as a portable telephone terminal, and examples thereof include a wrist watch and an electronic calculator.
　以下に、本発明の技術的特徴について付記する。 The technical features of the present invention will be described below.
　　〔付記１Ｅ〕
　透明な支持基板と、
　前記支持基板に積層された透明な第１導電層と、
　第２導電層と、
　前記第１導電層および前記第２導電層に挟まれた有機薄膜からなる光電変換層と、
　前記第２導電層を覆うパッシベーション層と、
を備え、
　前記第１導電層は、平面視において前記パッシベーション層から延出する延出部と、当該延出部の端縁に両端が到達したスリットと、当該スリットによって区画され且つ前記スリットの前記両端に繋がる接続部端縁を有する接続部と、を有し、
　前記光電変換層は、平面視において前記第１導電層の前記接続部に内包され且つ厚さ方向に貫通する導通用貫通部を有し、
　前記第２導電層と前記第１導電層の前記接続部とは、前記光電変換層の前記導通用貫通部を介して導通しており、
　前記接続部のうち前記パッシベーション層から延出する接続延出部の少なくとも一部を覆う第１バスバー部と、当該第１バスバー部に導通する第１集極部とを有するバイパス導電部を備える、有機薄膜太陽電池モジュール。
　　〔付記２Ｅ〕
　前記導通用貫通部は、平面視において円形状である、付記１Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記３Ｅ〕
　前記導通用貫通部は、前記接続部端縁と平行である方向を長手方向とする平面視細長形状である、付記１Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記４Ｅ〕
　前記第１集極部は、平面視において前記第２導電層および前記光電変換層と重なり、
　前記支持基板の厚さ方向において、前記第１集極部と前記第２導電層との間に前記パッシベーション層が介在する、付記１Ｅないし３Ｅのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記５Ｅ〕
　前記バイパス導電部は、前記第１導電層の前記延出部の少なくとも一部を覆う第２バスバー部と、当該第２バスバー部に導通する第２集極部とを有する、付記１Ｅないし４Ｅのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記６Ｅ〕
　前記第２集極部は、平面視において前記第２導電層および前記光電変換層と重なり、
　前記支持基板の厚さ方向において、前記第２集極部と前記第２導電層との間に前記パッシベーション層が介在する、付記５Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記７Ｅ〕
　前記第２バスバー部は、前記第１導電層の前記延出部のうち前記接続部を挟む部分に両端が繋がり、且つ平面視において前記第１集極部を迂回する迂回部を有する、付記６Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記８Ｅ〕
　前記光電変換層は、厚さ方向に貫通し且つ外観に表れる意匠表示部を構成する意匠表示用貫通部を有し、
　前記意匠表示用貫通部は、前記導通用貫通部に対して前記接続部端縁とは反対側に位置している、付記１Ｅないし７Ｅのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記９Ｅ〕
　前記第１導電層は、表示領域を構成するための表示用開口と、当該表示用開口を区画する第３端縁と、前記パッシベーション層から前記表示用開口側に延出する第１延出部と、を有し、
　前記接続部は、前記第３端縁に両端が到達した前記スリットによって区画されている、付記１Ｅないし８Ｅのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１０Ｅ〕
　前記第１導電層は、表示領域を構成するための表示用開口と、当該表示用開口を区画する第３端縁と、当該第３端縁とは反対側に位置する第３外方端縁と、前記パッシベーション層から前記表示用開口側に延出する第１延出部と、前記パッシベーション層から前記表示用開口とは反対側に延出する第２延出部と、を有し、
　前記接続部は、前記第３外方端縁に両端が到達した前記スリットによって区画されている、付記１Ｅないし８Ｅのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１１Ｅ〕
　前記バイパス導電部を覆う保護樹脂層を備える、付記９Ｅまたは１０Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記１２Ｅ〕
　前記パッシベーション層は、平面視において前記表示用開口と対向する第１端縁を有し、
　前記保護樹脂層は、前記パッシベーション層を覆う第１保護樹脂層と、当該第１保護樹脂層に積層され且つ前記バイパス導電部を覆う第２保護樹脂層と、を含み、
　前記第１保護樹脂層は、平面視において前記第１端縁と一致する第２端縁を有する、付記１１Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記１３Ｅ〕
　前記第１端縁と前記第２端縁とは、連続した面をなす、付記１２Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記１４Ｅ〕
　前記バイパス導電部は、平面視において前記第３端縁と一致する第７端縁を有する、付記１３Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記１５Ｅ〕
　前記第２保護樹脂層は、平面視において前記第３端縁および前記第７端縁に対して前記第１端縁とは反対側に位置する第６端縁を有し且つ前記支持基板に接している、付記１４Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記１６Ｅ〕
　前記第２導電層は、平面視において前記第１端縁よりも内方に退避した第４内方退避端縁を有する、付記１５Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記１７Ｅ〕
　前記光電変換層は、平面視において前記第１端縁よりも内方に退避した第５内方退避端縁を有する、付記１６Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記１８Ｅ〕
　前記第４内方退避端縁は、平面視において前記第５内方退避端縁よりも内方に退避している、付記１７Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記１９Ｅ〕
　前記パッシベーション層は、平面視において前記表示用開口と対向する第１端縁を有し、
　前記バイパス導電部は、平面視において前記第３端縁に対して前記第１端縁とは反対側に位置する第７端縁を有する、付記１１Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記２０Ｅ〕
　前記保護樹脂層は、平面視において前記第７端縁に対して前記第１端縁とは反対側に位置する第２端縁を有し且つ前記支持基板に接している、付記１９Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記２１Ｅ〕
　前記第２導電層は、平面視において前記第１端縁よりも内方に退避した第４内方退避端縁を有する、付記２０Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記２２Ｅ〕
　前記光電変換層は、平面視において前記第１端縁よりも内方に退避した第５内方退避端縁を有する、付記２１Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記２３Ｅ〕
　前記第４内方退避端縁は、平面視において前記第５内方退避端縁よりも内方に退避している、付記２２Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記２４Ｅ〕
　前記第１端縁は、平面視環状である、付記１８Ｅまたは２３Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記２５Ｅ〕
　前記第３端縁は、平面視環状である、付記２４Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記２６Ｅ〕
　前記第４内方退避端縁は、平面視環状である、付記２５Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記２７Ｅ〕
　前記第５内方退避端縁は、平面視環状である、付記２６Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記２８Ｅ〕
　前記第７端縁は、平面視環状である、付記２７Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記２９Ｅ〕
　前記第２端縁は、平面視環状である、付記２８Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記３０Ｅ〕
　前記第６端縁は、平面視環状である、付記１８Ｅに記載の有機薄膜太陽電池モジュール。
　　〔付記３１Ｅ〕
　前記第１導電層は、ＩＴＯからなる、付記１１Ｅないし３０Ｅのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記３２Ｅ〕
　前記第２導電層は、金属からなる、付記１１Ｅないし３１Ｅのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記３３Ｅ〕
　前記第２導電層は、Ａｌからなる、付記１１Ｅないし３２Ｅのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記３４Ｅ〕
　前記パッシベーション層は、ＳｉＮからなる、付記１１Ｅないし３３Ｅのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記３５Ｅ〕
　前記保護樹脂層は、紫外線硬化樹脂からなる、付記１１Ｅないし３４Ｅのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記３６Ｅ〕
　付記１Ｅないし３５Ｅのいずれかに記載の有機薄膜太陽電池モジュールと、
　前記有機薄膜太陽電池モジュールからの給電によって駆動する駆動部と、
を備える、電子機器。 [Appendix 1E]
A transparent support substrate;
A transparent first conductive layer laminated on the support substrate;
A second conductive layer;
A photoelectric conversion layer comprising an organic thin film sandwiched between the first conductive layer and the second conductive layer;
A passivation layer covering the second conductive layer;
With
The first conductive layer includes an extension portion extending from the passivation layer in a plan view, a slit having both ends reaching the edge of the extension portion, and a section defined by the slit and connected to the both ends of the slit. A connection part having a connection part edge,
The photoelectric conversion layer has a conduction through portion that is included in the connection portion of the first conductive layer in a plan view and penetrates in the thickness direction,
The second conductive layer and the connection portion of the first conductive layer are conducted through the conduction through portion of the photoelectric conversion layer,
A bypass conductive portion having a first bus bar portion covering at least a part of the connection extension portion extending from the passivation layer among the connection portions, and a first electrode collector portion conducting to the first bus bar portion; Organic thin-film solar cell module.
[Appendix 2E]
The organic thin-film solar cell module according to Supplementary Note 1E, wherein the through-hole for conduction is circular in plan view.
[Appendix 3E]
The organic thin-film solar cell module according to appendix 1E, wherein the through-hole for conduction has an elongated shape in a plan view with a direction parallel to the edge of the connection portion as a longitudinal direction.
[Appendix 4E]
The first electrode collector portion overlaps the second conductive layer and the photoelectric conversion layer in plan view,
The organic thin-film solar cell module according to any one of appendices 1E to 3E, wherein the passivation layer is interposed between the first electrode collector and the second conductive layer in a thickness direction of the support substrate.
[Appendix 5E]
The bypass conductive portion includes a second bus bar portion that covers at least a part of the extension portion of the first conductive layer, and a second electrode collector portion that conducts to the second bus bar portion. The organic thin-film solar cell module in any one.
[Appendix 6E]
The second electrode collector portion overlaps the second conductive layer and the photoelectric conversion layer in plan view,
The organic thin-film solar cell module according to appendix 5E, wherein the passivation layer is interposed between the second electrode collector and the second conductive layer in a thickness direction of the support substrate.
[Appendix 7E]
The second bus bar portion has a bypass portion having both ends connected to a portion of the extension portion of the first conductive layer sandwiching the connection portion and bypassing the first electrode collector portion in a plan view. The organic thin film solar cell module according to 1.
[Appendix 8E]
The photoelectric conversion layer has a design display penetrating portion that constitutes a design display portion that penetrates in the thickness direction and appears on the appearance.
The organic thin-film solar cell module according to any one of appendices 1E to 7E, wherein the design-display-penetrating portion is located on a side opposite to the connection portion end edge with respect to the conduction penetrating portion.
[Appendix 9E]
The first conductive layer includes a display opening for forming a display area, a third edge that defines the display opening, and a first extending portion that extends from the passivation layer to the display opening side. And having
The said connection part is an organic thin-film solar cell module in any one of Additional remarks 1E thru | or 8E divided by the said slit which both ends reached | attained to the said 3rd edge.
[Appendix 10E]
The first conductive layer includes a display opening for forming a display area, a third edge that defines the display opening, and a third outer edge located on the side opposite to the third edge. And a first extension part extending from the passivation layer to the display opening side, and a second extension part extending from the passivation layer to the side opposite to the display opening,
The said connection part is an organic thin-film solar cell module in any one of additional remarks 1E thru | or 8E divided by the said slit which both ends reached | attained to the said 3rd outer edge.
[Appendix 11E]
The organic thin-film solar cell module according to appendix 9E or 10E, comprising a protective resin layer that covers the bypass conductive portion.
[Appendix 12E]
The passivation layer has a first edge facing the display opening in plan view,
The protective resin layer includes a first protective resin layer that covers the passivation layer, and a second protective resin layer that is laminated on the first protective resin layer and covers the bypass conductive portion,
The organic thin-film solar cell module according to appendix 11E, wherein the first protective resin layer has a second end edge that coincides with the first end edge in plan view.
[Appendix 13E]
The organic thin-film solar cell module according to appendix 12E, wherein the first edge and the second edge form a continuous surface.
[Appendix 14E]
The bypass conductive part is an organic thin-film solar cell module according to appendix 13E, having a seventh edge that coincides with the third edge in plan view.
[Appendix 15E]
The second protective resin layer has a sixth edge located on a side opposite to the first edge with respect to the third edge and the seventh edge in a plan view, and is in contact with the support substrate. The organic thin film solar cell module according to Supplementary Note 14E.
[Appendix 16E]
The organic thin-film solar cell module according to appendix 15E, wherein the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
[Appendix 17E]
The organic thin-film solar cell module according to appendix 16E, wherein the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
[Appendix 18E]
The organic thin-film solar cell module according to appendix 17E, wherein the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
[Supplementary note 19E]
The passivation layer has a first edge facing the display opening in plan view,
The bypass conductive part is the organic thin-film solar cell module according to appendix 11E, having a seventh edge located on a side opposite to the first edge with respect to the third edge in plan view.
[Appendix 20E]
The said protective resin layer has 2nd edge located in the opposite side to said 1st edge with respect to said 7th edge in planar view, and touches the said support substrate of addition 19E. Organic thin-film solar cell module.
[Appendix 21E]
The organic thin-film solar cell module according to appendix 20E, wherein the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
[Appendix 22E]
The organic thin-film solar cell module according to appendix 21E, wherein the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
[Appendix 23E]
The organic thin-film solar cell module according to appendix 22E, wherein the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
[Appendix 24E]
The organic thin film solar cell module according to appendix 18E or 23E, wherein the first end edge is annular in plan view.
[Appendix 25E]
The organic thin film solar cell module according to attachment 24E, wherein the third end edge is annular in plan view.
[Appendix 26E]
The organic thin-film solar cell module according to Appendix 25E, wherein the fourth inward retracting edge is annular in plan view.
[Appendix 27E]
The organic thin-film solar cell module according to appendix 26E, wherein the fifth inward retracting edge is annular in plan view.
[Appendix 28E]
The organic thin film solar cell module according to appendix 27E, wherein the seventh end edge is annular in plan view.
[Appendix 29E]
The organic thin film solar cell module according to appendix 28E, wherein the second end edge is annular in plan view.
[Appendix 30E]
The organic thin film solar cell module according to appendix 18E, wherein the sixth end edge is annular in plan view.
[Appendix 31E]
31. The organic thin-film solar cell module according to any one of appendices 11E to 30E, wherein the first conductive layer is made of ITO.
[Appendix 32E]
The organic thin-film solar cell module according to any one of appendices 11E to 31E, wherein the second conductive layer is made of metal.
[Appendix 33E]
32. The organic thin film solar cell module according to any one of appendices 11E to 32E, wherein the second conductive layer is made of Al.
[Appendix 34E]
The organic thin-film solar cell module according to any one of appendices 11E to 33E, wherein the passivation layer is made of SiN.
[Appendix 35E]
The organic thin-film solar cell module according to any one of appendices 11E to 34E, wherein the protective resin layer is made of an ultraviolet curable resin.
[Appendix 36E]
An organic thin-film solar cell module according to any one of Supplementary Notes 1E to 35E;
A drive unit driven by feeding from the organic thin film solar cell module;
An electronic device.
［第１９－第２１実施形態］
　第１９ないし第２１実施形態および図１８４～図２１９における符号は、これらの実施形態および図において有効であり、他の実施形態および図における符号とは独立している。ただし、第１９ないし第２１実施形態の具体的構成と他の実施形態の具体的構成とは、相互に適宜組合せ可能である。 [19th to 21st embodiments]
The reference numerals in the nineteenth to twenty-first embodiments and FIGS. 184 to 219 are effective in these embodiments and drawings, and are independent of the reference numerals in the other embodiments and drawings. However, the specific configurations of the nineteenth to twenty-first embodiments and the specific configurations of the other embodiments can be appropriately combined with each other.
　本発明において、「透明」とは、透過率が約５０％以上であるものと定義する。また「透明」とは、可視光線に対して、無色透明という意味でも使用する。可視光線は波長約３６０ｎｍ～８３０ｎｍ程度、エネルギー約３．４５ｅＶ～１．４９ｅＶ程度に相当し、この領域で透過率が５０％以上あれば透明である。 In the present invention, “transparent” is defined as having a transmittance of about 50% or more. “Transparent” is also used to mean colorless and transparent to visible light. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.
　図１８４～図１８８は、本発明の第１９実施形態に基づく電子機器および本発明の第１９および第２０実施形態に基づく有機薄膜太陽電池モジュールを示している。本実施形態の電子機器Ｂ１９は、有機薄膜太陽電池モジュールＡ１９、有機薄膜太陽電池モジュールＡ２０、ケース６１、制御部７０１、表示部７０２、入力部７０３、マイク７０４、スピーカ７０５、無線通信部７０６およびバッテリ７０７を備えており、携帯型電話端末として構成されている。 FIGS. 184 to 188 show an electronic device based on the nineteenth embodiment of the present invention and an organic thin film solar cell module based on the nineteenth and twentieth embodiments of the present invention. The electronic device B19 of this embodiment includes an organic thin film solar cell module A19, an organic thin film solar cell module A20, a case 61, a control unit 701, a display unit 702, an input unit 703, a microphone 704, a speaker 705, a wireless communication unit 706, and a battery. 707 is configured as a portable telephone terminal.
　ケース６１は、電子機器Ｂ１９のその他の構成要素を収容するものであり、金属、樹脂、ガラスなどの材質からなる。 The case 61 accommodates other components of the electronic device B19 and is made of a material such as metal, resin, or glass.
　図１８４は、有機薄膜太陽電池モジュールＡ１９，Ａ２０およびこれらを用いた電子機器Ｂ１９を示す平面図である。図１８５は、有機薄膜太陽電池モジュールＡ１９，Ａ２０および電子機器Ｂ１９を示す底面図である。図１８６は、図１８４のＣＬＸＸＸＶＩ－ＣＬＸＸＸＶＩ線に沿う模式的な断面図である。図１８７は、図１８４のＣＬＸＸＸＶＩＩ－ＣＬＸＸＸＶＩＩ線に沿う要部拡大断面図である。図１８８は、電子機器Ｂ１９を示すシステム構成図である。なお、図１８６においては、理解の便宜上、ケース６１、有機薄膜太陽電池モジュールＡ１９、有機薄膜太陽電池モジュールＡ２０、制御部７０１、表示部７０２およびバッテリ７０７のみを模式的に示している。 FIG. 184 is a plan view showing organic thin-film solar cell modules A19, A20 and an electronic device B19 using them. FIG. 185 is a bottom view showing organic thin-film solar cell modules A19, A20 and electronic device B19. FIG. 186 is a schematic sectional view taken along the line CLXXXVI-CLXXXVI of FIG. 184. FIG. 187 is an enlarged cross-sectional view of a main part taken along line CLXXXVII-CLXXXVII in FIG. 184. FIG. 188 is a system configuration diagram showing the electronic apparatus B19. In FIG. 186, only the case 61, the organic thin film solar cell module A19, the organic thin film solar cell module A20, the control unit 701, the display unit 702, and the battery 707 are schematically shown for the sake of understanding.
　有機薄膜太陽電池モジュールＡ１９および有機薄膜太陽電池モジュールＡ２０は、電子機器Ｂ１９における電源モジュールであり、太陽光などの光を電力に変換する。具体的構成は、後述する。 Organic thin film solar cell module A19 and organic thin film solar cell module A20 are power supply modules in electronic device B19, and convert light such as sunlight into electric power. A specific configuration will be described later.
　制御部７０１は、本発明でいう駆動部の一例に相当し、有機薄膜太陽電池モジュールＡ１９および有機薄膜太陽電池モジュールＡ２０からの給電によって駆動する。なお、制御部７０１は、有機薄膜太陽電池モジュールＡ１９および有機薄膜太陽電池モジュールＡ２０から直接給電されてもよいし、有機薄膜太陽電池モジュールＡ１９および有機薄膜太陽電池モジュールＡ２０からの電力がバッテリ７０７に一旦充電された後に、このバッテリ７０７からの給電によって駆動されてもよい。制御部７０１は、たとえばＣＰＵ、メモリおよびインターフェースなどを具備して構成されている。 The control unit 701 corresponds to an example of a drive unit referred to in the present invention, and is driven by power feeding from the organic thin film solar cell module A19 and the organic thin film solar cell module A20. The control unit 701 may be directly supplied with power from the organic thin film solar cell module A19 and the organic thin film solar cell module A20, or the power from the organic thin film solar cell module A19 and the organic thin film solar cell module A20 is temporarily supplied to the battery 707. After being charged, the battery 707 may be driven by power feeding. The control unit 701 includes, for example, a CPU, a memory, an interface, and the like.
　表示部７０２は、各種の情報を電子機器Ｂ１９の外観に表示するためのものである。表示部７０２は、たとえば液晶表示パネルあるいは有機ＥＬ表示パネルなどである。本実施形態においては、表示部７０２は、有機薄膜太陽電池モジュールＡ１９を透して外観に情報を表す。 The display unit 702 is for displaying various types of information on the external appearance of the electronic device B19. The display unit 702 is, for example, a liquid crystal display panel or an organic EL display panel. In the present embodiment, the display unit 702 displays information on the exterior through the organic thin film solar cell module A19.
　入力部７０３は、使用者の操作を電気信号として制御部７０１に出力するためのものである。入力部７０３は、たとえば表示部７０２に積層されたタッチパネルである。なお、表示部７０２と入力部７０３とが一体的に構成されていてもよい。 The input unit 703 is for outputting a user operation as an electrical signal to the control unit 701. The input unit 703 is a touch panel laminated on the display unit 702, for example. Note that the display unit 702 and the input unit 703 may be configured integrally.
　マイク７０４は、使用者の音声を電気信号に変換するデバイスである。スピーカ７０５は、通話相手の音声や各種の通知音などを出力するデバイスである。 The microphone 704 is a device that converts a user's voice into an electrical signal. The speaker 705 is a device that outputs the voice of the other party and various notification sounds.
　無線通信部７０６は、無線通信規格に準拠した双方向無線通信を行うデバイスである。 The wireless communication unit 706 is a device that performs bidirectional wireless communication conforming to the wireless communication standard.
　バッテリ７０７は、電子機器Ｂ１９を駆動する電力を蓄えるデバイスである。バッテリ７０７は、充放電が適宜可能に構成されている。バッテリ７０７の充電は、図示しないアダプタを用いた商用電力からの給電、または有機薄膜太陽電池モジュールＡ１９および有機薄膜太陽電池モジュールＡ２０からの給電によってなされる。 The battery 707 is a device that stores electric power for driving the electronic device B19. The battery 707 is configured to be appropriately charged / discharged. The battery 707 is charged by feeding from commercial power using an adapter (not shown) or feeding from the organic thin film solar cell module A19 and the organic thin film solar cell module A20.
　有機薄膜太陽電池モジュールＡ１９および有機薄膜太陽電池モジュールＡ２０は、第１導電層１、第２導電層２、光電変換層３、支持基板４１、パッシベーション層４２、保護樹脂層４およびバイパス導電部５を備えている。本実施形態においては、有機薄膜太陽電池モジュールＡ１９および有機薄膜太陽電池モジュールＡ２０は、平面視矩形状とされているが、これは一例であり、それぞれは様々な形状とされうる。有機薄膜太陽電池モジュールＡ１９と有機薄膜太陽電池モジュールＡ２０とは、互いの構成が一部を除き共通する。以下においては、まず有機薄膜太陽電池モジュールＡ１９について説明する。 The organic thin film solar cell module A19 and the organic thin film solar cell module A20 include the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3, the support substrate 41, the passivation layer 42, the protective resin layer 4, and the bypass conductive portion 5. I have. In the present embodiment, the organic thin-film solar cell module A19 and the organic thin-film solar cell module A20 are rectangular in plan view, but this is an example, and each may have various shapes. The organic thin film solar cell module A19 and the organic thin film solar cell module A20 are common except for a part of each other. In the following, first, the organic thin film solar cell module A19 will be described.
　図１８９は、有機薄膜太陽電池モジュールＡ１９のうち第１導電層１、第２導電層２、光電変換層３、支持基板４１および保護樹脂層４を示す要部分解斜視図である。なお、理解の便宜上,支持基板４１は想像線（二点鎖線）で示している。図１９０は、有機薄膜太陽電池モジュールＡ１９の第１導電層１を示す平面図である。図１９１は、有機薄膜太陽電池モジュールＡ１９の光電変換層３を示す平面図である。図１９２は、有機薄膜太陽電池モジュールＡ１９の第２導電層２を示す平面図である。図１９３は、有機薄膜太陽電池モジュールＡ１９の保護樹脂層４の後述する第１保護樹脂層４５およびバイパス導電部５を示す平面図である。図１９４は、有機薄膜太陽電池モジュールＡ１９の保護樹脂層４の後述する第２保護樹脂層４６を示す平面図である。 FIG. 189 is an exploded perspective view of a main part showing the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3, the support substrate 41, and the protective resin layer 4 in the organic thin film solar cell module A19. For convenience of understanding, the support substrate 41 is indicated by an imaginary line (two-dot chain line). FIG. 190 is a plan view showing the first conductive layer 1 of the organic thin-film solar cell module A19. FIG. 191 is a plan view showing the photoelectric conversion layer 3 of the organic thin-film solar cell module A19. FIG. 192 is a plan view showing the second conductive layer 2 of the organic thin film solar cell module A19. FIG. 193 is a plan view showing a first protective resin layer 45 and a bypass conductive portion 5 described later of the protective resin layer 4 of the organic thin-film solar cell module A19. FIG. 194 is a plan view showing a second protective resin layer 46 described later of the protective resin layer 4 of the organic thin-film solar cell module A19.
　支持基板４１は、有機薄膜太陽電池モジュールＡ１９の土台となる部材である。支持基板４１は、たとえば透明なガラスあるいは樹脂からなる。支持基板４１の厚さは、たとえば０．０５ｍｍ～２．０ｍｍである。 The support substrate 41 is a member that becomes a base of the organic thin film solar cell module A19. The support substrate 41 is made of, for example, transparent glass or resin. The thickness of the support substrate 41 is, for example, 0.05 mm to 2.0 mm.
　第１導電層１は、支持基板４１上に形成されている。第１導電層１は、透明であり、本実施形態においてはＩＴＯからなる。図１８９および図１９０に示すように、第１導電層１は、第１電極部１１、第１端部１４、第３延出部１５、第４延出部１６、複数の開口１８およびスリット１９、第３端縁１０１、第３外方端縁１０５、第１延出部１０４および第２延出部１０３を有する。本実施形態においては、第１導電層１は、平面視略矩形状とされているが、これは第１導電層１の形状の一例である。第１導電層１の形状は、様々な形状に設定されうる。第１導電層１の厚さは、たとえば１００ｎｍ～３００ｎｍである。なお、図１９０において、第１電極部１１、第１端部１４、第３延出部１５および第４延出部１６には、斜線のハッチングを付している。 The first conductive layer 1 is formed on the support substrate 41. The first conductive layer 1 is transparent and is made of ITO in this embodiment. As shown in FIGS. 189 and 190, the first conductive layer 1 includes a first electrode portion 11, a first end portion 14, a third extension portion 15, a fourth extension portion 16, a plurality of openings 18 and a slit 19. , A third end edge 101, a third outer end edge 105, a first extension part 104, and a second extension part 103. In the present embodiment, the first conductive layer 1 has a substantially rectangular shape in plan view, but this is an example of the shape of the first conductive layer 1. The shape of the first conductive layer 1 can be set to various shapes. The thickness of the first conductive layer 1 is, for example, 100 nm to 300 nm. In FIG. 190, the first electrode portion 11, the first end portion 14, the third extending portion 15, and the fourth extending portion 16 are hatched.
　第１電極部１１は、光電変換層３によって生じた正孔が集約される層であり、いわゆるアノード電極として機能する。本実施形態においては、第１導電層１の大部分が１つの第１電極部１１とされている。 The first electrode portion 11 is a layer in which holes generated by the photoelectric conversion layer 3 are aggregated, and functions as a so-called anode electrode. In the present embodiment, most of the first conductive layer 1 is a single first electrode portion 11.
　第３延出部１５は、第１電極部１１から、平面視において光電変換層３の外方に延出する部分である。図１９０においては、第１電極部１１と第３延出部１５との境界を想像線（二点鎖線）で示している。第３延出部１５を設けることにより、光電変換層３における発電によって集約された正孔を、有機薄膜太陽電池モジュールＡ１９外に導くことができる。 The third extending portion 15 is a portion extending from the first electrode portion 11 to the outside of the photoelectric conversion layer 3 in plan view. In FIG. 190, the boundary between the first electrode portion 11 and the third extension portion 15 is indicated by an imaginary line (two-dot chain line). By providing the 3rd extension part 15, the hole collected by the electric power generation in the photoelectric converting layer 3 can be guide | induced outside the organic thin-film solar cell module A19.
　第１端部１４は、スリット１９によって第１電極部１１と隔離された部分である。本実施形態においては、第１端部１４は、たとえば平面視円形状とされている。本実施形態においては、第１端部１４は、略円形状とされた部分と矩形状の部分とが組み合わされた形状とされている。 The first end portion 14 is a portion separated from the first electrode portion 11 by the slit 19. In the present embodiment, the first end portion 14 has, for example, a circular shape in plan view. In the present embodiment, the first end portion 14 has a shape in which a substantially circular portion and a rectangular portion are combined.
　第４延出部１６は、第１端部１４から、平面視において光電変換層３の外方に延出している。図１９０においては、第１端部１４と第４延出部１６との境界を想像線（二点鎖線）で示している。本実施形態においては、第３延出部１５と第４延出部１６とが隣り合う配置とされている。第４延出部１６を設けることにより、光電変換層３における発電によって集約された電子を、有機薄膜太陽電池モジュールＡ１９外に導くことができる。 The fourth extending portion 16 extends from the first end portion 14 to the outside of the photoelectric conversion layer 3 in plan view. In FIG. 190, the boundary between the first end portion 14 and the fourth extending portion 16 is indicated by an imaginary line (two-dot chain line). In the present embodiment, the third extending portion 15 and the fourth extending portion 16 are arranged adjacent to each other. By providing the 4th extension part 16, the electrons concentrated by the electric power generation in the photoelectric converting layer 3 can be guide | induced outside the organic thin-film solar cell module A19.
　複数の開口１８は、厚さ方向に第１導電層１を貫通した開口部分である。本実施形態においては、２つの開口１８が設けられている。図１９０における図中上方の開口１８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口１８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 18 are openings that penetrate the first conductive layer 1 in the thickness direction. In the present embodiment, two openings 18 are provided. The upper opening 18 in FIG. 190 is provided to make the speaker 705 function, for example. On the other hand, the largest opening 18 in the center in the figure is provided to display the information displayed by the display unit 702 on the appearance.
　第３端縁１０１は、図中中央の開口１８を規定する端縁である。本実施形態においては、第３端縁１０１は、開口１８を四方から囲む端縁となっており、平面視矩形環状である。なお、第３端縁１０１は、開口１８を四方から囲む形状に限定されない。たとえば、第３端縁１０１が開口１８に三方から隣接することにより、開口１８が第１電極部１１から平面視において外方に開いた構成であってもよい。あるいは、第３端縁１０１は、開口１８に対して二方あるいは一方のみから隣接するものであってもよい。第３端縁１０１に隣接する領域、すなわち図中中央の開口１８からは、支持基板４１が露出している。また、第３端縁１０１は、後述する第１保護樹脂層４５の第２端縁４５１およびパッシベーション層４２の第１端縁４２１から延出する第１導電層１の部分の内端縁とされている。 The third edge 101 is an edge that defines the central opening 18 in the drawing. In the present embodiment, the third end edge 101 is an end edge surrounding the opening 18 from four directions, and has a rectangular shape in plan view. The third end edge 101 is not limited to a shape surrounding the opening 18 from four directions. For example, the third end edge 101 may be adjacent to the opening 18 from three directions so that the opening 18 opens outward from the first electrode portion 11 in plan view. Alternatively, the third edge 101 may be adjacent to the opening 18 from two or only one side. The support substrate 41 is exposed from a region adjacent to the third edge 101, that is, from the central opening 18 in the drawing. The third edge 101 is an inner edge of a portion of the first conductive layer 1 that extends from a second edge 451 of the first protective resin layer 45 described later and the first edge 421 of the passivation layer 42. ing.
　第１延出部１０４は、パッシベーション層４２から内方（開口１８）に延出する部位である。本実施形態においては、第１導電層１の略全内周部分に、第２延出部１０３が設けられている。 The first extending portion 104 is a portion extending inward (opening 18) from the passivation layer 42. In the present embodiment, the second extending portion 103 is provided on substantially the entire inner peripheral portion of the first conductive layer 1.
　第２延出部１０３は、パッシベーション層４２から外方に延出する部位である。本実施形態においては、第１導電層１の略全外周部分に、第２延出部１０３が設けられている。第３外方端縁１０５は、第２延出部１０３の外周端縁である。 The second extending portion 103 is a portion that extends outward from the passivation layer 42. In the present embodiment, the second extending portion 103 is provided on substantially the entire outer peripheral portion of the first conductive layer 1. The third outer end edge 105 is an outer peripheral end edge of the second extending portion 103.
　第２導電層２は、その大部分が光電変換層３を介して第１導電層１上に積層されている。また、第２導電層２の一部は、第１導電層１に直接接している。第２導電層２の材質は特に限定されないが、本実施形態においては、第２導電層２は、Ａｌ、Ｗ、Ｍｏ、Ｍｎ、Ｍｇに代表される金属からなる。以下においては、第２導電層２がＡｌからなる場合を例に説明する。したがって、第２導電層２は、透明ではない。またこの場合、第２導電層２の支持基板４１とは反対側の表面に、Ａｌ２Ｏ３からなる不動態皮膜（図示略）が形成されてもよい。第２導電層２の厚さは、たとえば３０ｎｍ～１５０ｎｍである。 Most of the second conductive layer 2 is laminated on the first conductive layer 1 via the photoelectric conversion layer 3. A part of the second conductive layer 2 is in direct contact with the first conductive layer 1. Although the material of the 2nd conductive layer 2 is not specifically limited, In this embodiment, the 2nd conductive layer 2 consists of metals represented by Al, W, Mo, Mn, and Mg. Hereinafter, a case where the second conductive layer 2 is made of Al will be described as an example. Therefore, the second conductive layer 2 is not transparent. In this case, a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second conductive layer 2 opposite to the support substrate 41. The thickness of the second conductive layer 2 is, for example, 30 nm to 150 nm.
　図１９２に示すように、第２導電層２は、第２電極部２１、第２端部２４および複数の開口２８を有する。本実施形態においては、第２導電層２は、平面視略矩形状とされているが、これは第２導電層２の形状の一例である。第２導電層２の形状は、様々な形状に設定されうる。なお、図１９２においては、第２電極部２１および第２端部２４に、斜線のハッチングを付している。 As shown in FIG. 192, the second conductive layer 2 has a second electrode portion 21, a second end portion 24, and a plurality of openings 28. In the present embodiment, the second conductive layer 2 has a substantially rectangular shape in plan view, but this is an example of the shape of the second conductive layer 2. The shape of the second conductive layer 2 can be set to various shapes. In FIG. 192, the second electrode portion 21 and the second end portion 24 are hatched.
　第２電極部２１は、光電変換層３によって生じた電子が集約される層であり、いわゆるカソード電極として機能する。第２電極部２１は、平面視において、第１電極部１１と一致する。本実施形態においては、第２導電層２の大部分が第２電極部２１とされている。 The second electrode portion 21 is a layer in which electrons generated by the photoelectric conversion layer 3 are collected, and functions as a so-called cathode electrode. The second electrode portion 21 coincides with the first electrode portion 11 in plan view. In the present embodiment, most of the second conductive layer 2 is the second electrode portion 21.
　第２端部２４は、平面視において第１導電層１の第１端部１４に一致し、且つ第２電極部２１に繋がっている。図１９２においては、理解の便宜上、第２端部２４の形状を想像線（二点鎖線）で示している。第２端部２４は、第１端部１４と同様に平面視略円形状の部分と平面視矩形状の部分とが組み合わされたとされている。 The second end portion 24 coincides with the first end portion 14 of the first conductive layer 1 in plan view and is connected to the second electrode portion 21. In FIG. 192, for convenience of understanding, the shape of the second end portion 24 is indicated by an imaginary line (two-dot chain line). Similarly to the first end portion 14, the second end portion 24 is a combination of a substantially circular portion in plan view and a rectangular portion in plan view.
　複数の開口２８は、厚さ方向に第２導電層２を貫通する開口部分である。本実施形態においては、２つの開口２８が設けられている。図１９２における図中上方の開口２８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口２８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 28 are openings that penetrate the second conductive layer 2 in the thickness direction. In the present embodiment, two openings 28 are provided. The upper opening 28 in FIG. 192 is provided, for example, to make the speaker 705 function. On the other hand, the largest opening 28 in the center in the figure is provided to display the information displayed by the display unit 702 on the appearance.
　第４内方退避端縁２０１は、図中中央の開口２８を規定する端縁である。本実施形態においては、第４内方退避端縁２０１は、開口２８を四方から囲む端縁となっており、平面視矩形環状である。なお、第４内方退避端縁２０１は、開口２８を四方から囲む形状に限定されない。たとえば、第４内方退避端縁２０１が開口２８を三方から隣接することにより、開口２８が第２電極部２１から平面視において外方に開いた構成であってもよい。あるいは、第４内方退避端縁２０１は、開口２８に対して二方あるいは一方のみから隣接するものであってもよい。また、図１８７に示すように、第４内方退避端縁２０１は、第３端縁１０１よりも内方（開口１８内に延出する方向とは反対側）に退避している。 The fourth inward retracting edge 201 is an edge that defines the central opening 28 in the drawing. In the present embodiment, the fourth inward retracting edge 201 is an edge that surrounds the opening 28 from four directions and has a rectangular shape in plan view. The fourth inward retracting edge 201 is not limited to a shape surrounding the opening 28 from four directions. For example, the fourth inward retracting edge 201 may be configured such that the opening 28 is opened outward from the second electrode portion 21 in plan view by adjoining the opening 28 from three directions. Alternatively, the fourth inward retracting edge 201 may be adjacent to the opening 28 from two or only one side. As shown in FIG. 187, the fourth inward retracting edge 201 is retracted inward (opposite to the direction extending into the opening 18) than the third end edge 101.
　第４外方退避端縁２０２は、図１８７に示すように、後述するパッシベーション層４２の第１外方端縁４２２および第１保護樹脂層４５の第２外方端縁４５２よりも平面視において内方（図１８７における右方）に退避している。本実施形態においては、第４外方退避端縁２０２は、平面視環状である。 As shown in FIG. 187, the fourth outer retraction edge 202 is in a plan view than the first outer end edge 422 of the passivation layer 42 to be described later and the second outer end edge 452 of the first protective resin layer 45. It is retracted inward (to the right in FIG. 187). In the present embodiment, the fourth outward retracting edge 202 has an annular shape in plan view.
　光電変換層３は、第１導電層１と第２導電層２とに挟まれて、支持基板４１に積層されている。光電変換層３は、有機薄膜からなる層であり、受けた光を電力に変換する光電変換機能を発揮する。光電変換層３の具体的構成は特に限定されないが、その一例を挙げると、バルクヘテロ接合有機活性層と、このバルクヘテロ接合有機活性層に対して第１導電層１側に積層された正孔輸送層とからなる。本実施形態においては、光電変換層３は、平面視矩形状とされているが、これは一例であり、光電変換層３は、様々な形状とされうる。光電変換層３の厚さは、たとえば５０ｎｍ～３００ｎｍである。 The photoelectric conversion layer 3 is sandwiched between the first conductive layer 1 and the second conductive layer 2 and laminated on the support substrate 41. The photoelectric conversion layer 3 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power. The specific configuration of the photoelectric conversion layer 3 is not particularly limited. For example, a bulk heterojunction organic active layer and a hole transport layer stacked on the first conductive layer 1 side with respect to the bulk heterojunction organic active layer are given. It consists of. In the present embodiment, the photoelectric conversion layer 3 has a rectangular shape in plan view, but this is an example, and the photoelectric conversion layer 3 can have various shapes. The thickness of the photoelectric conversion layer 3 is, for example, 50 nm to 300 nm.
　バルクヘテロ接合有機活性層は、ｐ型有機活性層領域とｎ型有機活性層領域が混在し、複雑なバルクへテロｐｎ接合を形成している。ｐ型有機活性層領域は、例えば、Ｐ３ＨＴ（poly(3-hexylthiophene-2,5diyl)）で形成され、ｎ型有機活性層領域は、例えば、ＰＣＢＭ（6,6-phenyl-C61-butyric acid methyl ester）で形成されている。正孔輸送層は、たとえばＰＥＤＯＴ：ＰＳＳで形成されている。 In the bulk heterojunction organic active layer, a p-type organic active layer region and an n-type organic active layer region are mixed to form a complex bulk hetero pn junction. The p-type organic active layer region is formed of, for example, P3HT (poly (3-hexylthiophene-2,5diyl)), and the n-type organic active layer region is, for example, PCBM (6,6-phenyl-C61-butyric acid methyl). ester). The hole transport layer is made of, for example, PEDOT: PSS.
　光電変換層３の形成に用いられる材質を例示すると、フタロシアニン（Ｐｃ:Phthalocyanine）、亜鉛フタロシアニン（ＺｎＰｃ:Zinc- phthalocyanine）、Ｍｅ－Ｐｔｃｄｉ（N,N’-dimethyl perylene-3,4,9,10-dicarboximide）、フラーレン（C 60 :Buckminster fullerene）が挙げられる。これらの材質は、たとえば真空蒸着に使用される。 Examples of materials used to form the photoelectric conversion layer 3 include phthalocyanine (Pc: Phthhalocyanine), zinc phthalocyanine (ZnPc: Zinc- phthalocyanine), Me-Ptcdi (N, N'-dimethyl perylene-3,4,9,10). -dicarboximide) and fullerene (C 60: Buckminster fullerene). These materials are used for vacuum deposition, for example.
　また、光電変換層３の形成に用いられる他の材質を例示すると、ＭＤＭＯ－ＰＰＶ（poly[2-methoxy-5-(3,7-dimethyl octyloxy)]-1,4-phenylene vinylene）、ＰＣＤＴＢＴ（poly[N-9’-hepta-decanyl-2,7-carbazole-alt-5,5-(4’,7’-di-thienyl-2’1’,3’-b3nzothiadizaole)]）、ＰＣ６０ＢＭ（6,6-phenyl-C61-butyric acid methyl ester）、ＰＣ７０ＢＭ（6,6-phenyl-C71-butyric acid methyl ester）が挙げられる。これらの材質は、たとえば溶液プロセスに使用される。 Other materials used for forming the photoelectric conversion layer 3 are exemplified by MDMO-PPV (poly [2-methoxy-5- (3,7-dimethyl-octyloxy)]-1,4-phenylene-vinylene), PCDTBT ( poly [N-9'-hepta-decanyl-2,7-carbazole-alt-5,5- (4 ', 7'-di-thienyl-2'1', 3'-b3nzothiadizaole)]), PC60BM (6 , 6-phenyl-C61-butyric acid methyl ester) and PC70BM (6,6-phenyl-C71-butyric acid methyl ester). These materials are used, for example, in solution processes.
　図１９１に示すように、光電変換層３は、非発電領域３０、発電領域３１および意匠表示部３５、複数の開口３８、第５内方退避端縁３０１および第５外方退避端縁３０２を有している。なお、図１９１においては、非発電領域３０および発電領域３１に、複数の離散点からなるハッチングを付している。 As shown in FIG. 191, the photoelectric conversion layer 3 includes a non-power generation region 30, a power generation region 31, a design display unit 35, a plurality of openings 38, a fifth inner retraction edge 301, and a fifth outer retraction edge 302. Have. In FIG. 191, the non-power generation region 30 and the power generation region 31 are hatched with a plurality of discrete points.
　意匠表示部３５は、第１導電層１を透して外観に表れる意匠を構成する部位である。意匠表示部３５が構成する意匠とは、使用者等が目視することによって、文字、記号、図柄などの視覚的特異部分として視認されうるものを指す。本実施形態においては、意匠表示部３５は、円環形状を表している。 The design display part 35 is a part that constitutes a design that appears through the first conductive layer 1 and appears on the exterior. The design which the design display part 35 comprises refers to what can be visually recognized as visually peculiar parts, such as a character, a symbol, and a design, when a user etc. look. In the present embodiment, the design display unit 35 represents an annular shape.
　本実施形態においては、意匠表示部３５は、貫通部３５０によって構成されている。貫通部３５０は、光電変換層３を厚さ方向に貫通する態様の部位である。このような貫通部３５０は、第１導電層１を透して外観に表れる。また、本実施形態においては、貫通部３５０は、第２導電層２を第１導電層１側に露出させている。すなわち、貫通部３５０を通じて第２導電層２の一部が外観に表れている。 In the present embodiment, the design display unit 35 is configured by a through-hole portion 350. The penetrating part 350 is a part having a mode of penetrating the photoelectric conversion layer 3 in the thickness direction. Such a penetrating portion 350 appears through the first conductive layer 1. In the present embodiment, the penetrating portion 350 exposes the second conductive layer 2 to the first conductive layer 1 side. That is, a part of the second conductive layer 2 appears on the exterior through the through part 350.
　発電領域３１は、第１導電層１の第１電極部１１および第２導電層２の第２電極部２１に挟まれ、且つ光電変換機能を発揮することにより発電に寄与する領域である。また、発電領域３１の形状は、平面視において、第１電極部１１および第２電極部２１に一致する。 The power generation region 31 is a region that is sandwiched between the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 and contributes to power generation by exhibiting a photoelectric conversion function. The shape of the power generation region 31 matches the first electrode part 11 and the second electrode part 21 in plan view.
　非発電領域３０は、光電変換層３のうち平面視において第１導電層１の第１電極部１１および第２導電層２の第２電極部２１とは重ならない領域であり、第１導電層１の第１端部１４と重なっている。第１端部１４は、第２導電層２の第２端部２４と接しており、集約された正孔と電子とが即座に結合してしまう。このため、非発電領域３０は、発電に寄与しない。すなわち、光電変換層３のうち複数の発電領域３１以外の領域が、非発電領域３０とされている。 The non-power generation region 30 is a region of the photoelectric conversion layer 3 that does not overlap the first electrode portion 11 of the first conductive layer 1 and the second electrode portion 21 of the second conductive layer 2 in plan view. 1 overlaps the first end 14 of the first. The first end portion 14 is in contact with the second end portion 24 of the second conductive layer 2, and the aggregated holes and electrons are immediately combined. For this reason, the non-power generation region 30 does not contribute to power generation. That is, a region other than the plurality of power generation regions 31 in the photoelectric conversion layer 3 is a non-power generation region 30.
　本実施形態においては、非発電領域３０は、端部領域３４とされている。端部領域３４は、貫通部３５０（意匠表示部３５）を有している。端部領域３４は、平面視において第１導電層１の第１端部１４に内包される貫通部３５０（意匠表示部３５）を含み、且つ第１導電層１の第１端部１４に重なっている。また、端部領域３４は、第２導電層２の第２端部２４と重なっている。第１導電層１の第１端部１４と第２導電層２の第２端部２４とは、端部領域３４の貫通部３５０を通じて接している。 In the present embodiment, the non-power generation region 30 is an end region 34. The end region 34 has a penetrating portion 350 (design display portion 35). The end region 34 includes a through portion 350 (design display portion 35) included in the first end portion 14 of the first conductive layer 1 in plan view, and overlaps the first end portion 14 of the first conductive layer 1. ing. The end region 34 overlaps the second end 24 of the second conductive layer 2. The first end portion 14 of the first conductive layer 1 and the second end portion 24 of the second conductive layer 2 are in contact with each other through the through portion 350 of the end region 34.
　複数の開口３８は、光電変換層３を厚さ方向に貫通する開口部分である。本実施形態においては、２つの開口３８が設けられている。図１９１における図中上方の開口３８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口３８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 38 are openings that penetrate the photoelectric conversion layer 3 in the thickness direction. In the present embodiment, two openings 38 are provided. The upper opening 38 in FIG. 191 is provided to make the speaker 705 function, for example. On the other hand, the largest opening 38 in the center in the drawing is provided to display the information displayed by the display unit 702 on the appearance.
　第５内方退避端縁３０１は、図中中央の開口３８を規定する端縁である。本実施形態においては、第５内方退避端縁３０１は、開口３８を四方から囲む端縁となっており、平面視矩形環状である。なお、第５内方退避端縁３０１は、開口３８を四方から囲む形状に限定されない。たとえば、第５内方退避端縁３０１が開口３８を三方から隣接することにより、開口３８が発電領域３１から平面視において外方に開いた構成であってもよい。あるいは、第５内方退避端縁３０１は、開口３８に対して二方あるいは一方のみに設けられたものであってもよい。また、図１８７に示すように、第５内方退避端縁３０１は、第３端縁１０１よりも内方（開口１８内に延出する方向とは反対側）に退避している。 The fifth inward retracting edge 301 is an edge that defines the central opening 38 in the drawing. In the present embodiment, the fifth inward retracting edge 301 is an edge that surrounds the opening 38 from four directions and has a rectangular ring shape in plan view. The fifth inward retracting edge 301 is not limited to a shape surrounding the opening 38 from four directions. For example, the fifth inward retracting edge 301 may be configured such that the opening 38 is opened outward from the power generation region 31 in a plan view by adjoining the opening 38 from three directions. Alternatively, the fifth inward retracting edge 301 may be provided in two or only one with respect to the opening 38. Further, as shown in FIG. 187, the fifth inward retracting edge 301 is retracted inward (opposite to the direction extending into the opening 18) than the third end edge 101.
　第５外方退避端縁３０２は、図１８７に示すように、後述するパッシベーション層４２の第１外方端縁４２２よりも平面視において内方（図１８７における右方）に退避している。本実施形態においては、第５外方退避端縁３０２は、平面視環状である。 As shown in FIG. 187, the fifth outer retracting edge 302 is retracted inward (rightward in FIG. 187) in a plan view from a first outer end edge 422 of a passivation layer 42 described later. In the present embodiment, the fifth outward retracting edge 302 is annular in plan view.
　上述した構成により、有機薄膜太陽電池モジュールＡ１９においては、第３延出部１５が第１電極部１１に繋がっている。また、第２電極部２１には、第２端部２４が繋がっている。第２端部２４は、端部領域３４の貫通部３５０を通じて第１端部１４と接している。第１端部１４には、第４延出部１６が繋がっている。この結果、第３延出部１５と第４延出部１６とが有機薄膜太陽電池モジュールＡ１９の出力端子として機能する。 With the above-described configuration, in the organic thin film solar cell module A19, the third extending portion 15 is connected to the first electrode portion 11. Further, the second end portion 24 is connected to the second electrode portion 21. The second end portion 24 is in contact with the first end portion 14 through the through portion 350 of the end region 34. A fourth extension portion 16 is connected to the first end portion 14. As a result, the 3rd extension part 15 and the 4th extension part 16 function as an output terminal of organic thin film solar cell module A19.
　パッシベーション層４２は、第２導電層２上に積層されており、第２導電層２および光電変換層３を保護している。パッシベーション層４２は、たとえばＳｉＮまたはＳｉＯＮからなる。パッシベーション層４２の厚さは、たとえば０．５μｍ～２．０μｍであり、本実施形態においては、たとえば１．５μｍ程度とされる。 The passivation layer 42 is laminated on the second conductive layer 2 and protects the second conductive layer 2 and the photoelectric conversion layer 3. The passivation layer 42 is made of, for example, SiN or SiON. The thickness of the passivation layer 42 is, for example, 0.5 μm to 2.0 μm. In the present embodiment, the thickness is, for example, about 1.5 μm.
　保護樹脂層４は、パッシベーション層４２を覆っている層である。また、保護樹脂層４は、バイパス導電部５を覆っている。保護樹脂層４は、たとえば紫外線硬化樹脂からなる。保護樹脂層４の厚さは、たとえば３μｍ～２０μｍであり、本実施形態においては、たとえば１０μｍ程度とされる。 The protective resin layer 4 is a layer covering the passivation layer 42. The protective resin layer 4 covers the bypass conductive portion 5. The protective resin layer 4 is made of, for example, an ultraviolet curable resin. The thickness of the protective resin layer 4 is, for example, 3 μm to 20 μm. In this embodiment, the thickness is, for example, about 10 μm.
　本実施形態においては、保護樹脂層４は、第１保護樹脂層４５および第２保護樹脂層４６を有する。第１保護樹脂層４５は、パッシベーション層４２を覆う層である。第２保護樹脂層４６は、第１保護樹脂層４５に積層されており、バイパス導電部５を覆う層である。 In this embodiment, the protective resin layer 4 includes a first protective resin layer 45 and a second protective resin layer 46. The first protective resin layer 45 is a layer that covers the passivation layer 42. The second protective resin layer 46 is laminated on the first protective resin layer 45 and covers the bypass conductive portion 5.
　図１９３に示すように、第１保護樹脂層４５は、複数の開口４５８、第２端縁４５１および第２外方端縁４５２を有する。なお、図１９３においては、第１保護樹脂層４５に斜線のハッチングを付している。 193, the first protective resin layer 45 has a plurality of openings 458, a second end edge 451, and a second outer end edge 452. In FIG. 193, the first protective resin layer 45 is hatched.
　複数の開口４５８は、第１保護樹脂層４５の一部が削除された態様であり、第１保護樹脂層４５を貫通している。本実施形態においては、２つの開口４５８が設けられている。図１９３における図中上方の開口４５８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口４５８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 458 is a mode in which a part of the first protective resin layer 45 is removed, and penetrates the first protective resin layer 45. In the present embodiment, two openings 458 are provided. An upper opening 458 in FIG. 193 is provided to allow the speaker 705 to function, for example. On the other hand, the largest opening 458 in the center in the drawing is provided to display the information displayed by the display unit 702 on the appearance.
　第２端縁４５１は、図中中央の開口４５８を規定する端縁である。本実施形態においては、第２端縁４５１は、開口４５８を四方から囲む端縁となっており、平面視矩形環状である。なお、第２端縁４５１は、開口４５８を四方から囲む形状に限定されない。たとえば、第２端縁４５１が開口４５８を三方から隣接することにより、開口４５８が第１保護樹脂層４５から平面視において外方に開いた構成であってもよい。あるいは、第２端縁４５１は、開口４５８に対して二方あるいは一方のみ設けられたものであってもよい。 The second edge 451 is an edge that defines the central opening 458 in the drawing. In the present embodiment, the second end edge 451 is an end edge that surrounds the opening 458 from four directions, and has a rectangular ring shape in plan view. The second end edge 451 is not limited to a shape surrounding the opening 458 from four sides. For example, the second end edge 451 may be adjacent to the opening 458 from three directions so that the opening 458 opens outward from the first protective resin layer 45 in plan view. Alternatively, the second end edge 451 may be provided in two or only one with respect to the opening 458.
　第２外方端縁４５２は、平面視において光電変換層３の少なくとも一部を挟んで第２端縁４５１と反対側に位置しており、本実施形態においては、第１保護樹脂層４５の外周端縁である。 The second outer edge 452 is located on the opposite side of the second edge 451 across at least a part of the photoelectric conversion layer 3 in plan view. In the present embodiment, the second outer edge 452 of the first protective resin layer 45 is located. It is an outer peripheral edge.
　図１９４に示すように、第２保護樹脂層４６は、複数の開口４６８、第６端縁４６１および第６外方端縁４６２を有する。 194, the second protective resin layer 46 has a plurality of openings 468, a sixth end edge 461, and a sixth outer end edge 462.
　複数の開口４６８は、第２保護樹脂層４６の一部が削除された態様であり、第２保護樹脂層４６を貫通している。本実施形態においては、２つの開口４６８が設けられている。図１９４における図中上方の開口４６８は、たとえばスピーカ７０５を機能させるために設けられたものである。一方、図中中央の最も大である開口４６８は、表示部７０２によって表示された情報を外観に表すために設けられたものである。 The plurality of openings 468 are a form in which a part of the second protective resin layer 46 is deleted, and penetrate the second protective resin layer 46. In the present embodiment, two openings 468 are provided. In FIG. 194, the upper opening 468 in the drawing is provided to allow the speaker 705 to function, for example. On the other hand, the largest opening 468 in the center in the figure is provided to display the information displayed by the display unit 702 on the appearance.
　第６端縁４６１は、図中中央の開口４６８を規定する端縁である。本実施形態においては、第６端縁４６１は、開口４６８を四方から囲む端縁となっており、平面視矩形環状である。なお、第６端縁４６１は、開口４６８を四方から囲む形状に限定されない。たとえば、第６端縁４６１が開口４６８を三方から隣接することにより、開口４６８が第２保護樹脂層４６から平面視において外方に開いた構成であってもよい。あるいは、第６端縁４６１は、開口４６８に対して二方あるいは一方のみ設けられたものであってもよい。また、開口４６８は、平面視において矩形状以外のたとえば円形であってもよい。 The sixth edge 461 is an edge that defines the central opening 468 in the figure. In the present embodiment, the sixth end edge 461 is an end edge surrounding the opening 468 from four directions, and has a rectangular ring shape in plan view. Note that the sixth end edge 461 is not limited to a shape surrounding the opening 468 from four directions. For example, the sixth edge 461 may be adjacent to the opening 468 from three directions so that the opening 468 opens outward from the second protective resin layer 46 in plan view. Alternatively, the sixth end edge 461 may be provided in two or only one with respect to the opening 468. Further, the opening 468 may be, for example, a circle other than the rectangular shape in plan view.
　第６外方端縁４６２は、平面視において光電変換層３の少なくとも一部を挟んで第６端縁４６１と反対側に位置しており、本実施形態においては、第２保護樹脂層４６の外周端縁である。 The sixth outer edge 462 is located on the opposite side of the sixth edge 461 across at least a part of the photoelectric conversion layer 3 in plan view. In the present embodiment, the sixth outer edge 462 of the second protective resin layer 46 is located. It is an outer peripheral edge.
　パッシベーション層４２は、第１端縁４２１および第１外方端縁４２２を有している。 The passivation layer 42 has a first edge 421 and a first outer edge 422.
　第１端縁４２１は、平面視において第２端縁４５１と一致している。また、本実施形態においては、第１端縁４２１は、第２端縁４５１と連続した面をなしている。第１外方端縁４２２は、平面視において第２外方端縁４５２と一致している。また、本実施形態においては、第１外方端縁４２２は、第２外方端縁４５２と連続した面をなしている。 The first end edge 421 coincides with the second end edge 451 in plan view. In the present embodiment, the first end edge 421 forms a surface continuous with the second end edge 451. The first outer end edge 422 coincides with the second outer end edge 452 in plan view. In the present embodiment, the first outer end edge 422 forms a surface that is continuous with the second outer end edge 452.
　バイパス導電部５は、第１導電層１に到達した正孔を集電するための、第１導電層１より低抵抗な経路を構成するためのものである。本実施形態においては、バイパス導電部５は、２つのバスバー部５１、複数の連絡部５２および２つの集極部５３を有する。バイパス導電部５は、第１導電層１よりも低抵抗な材質からなり、たとえばＡｇまたはカーボンを含む。 The bypass conductive portion 5 is for configuring a path having a lower resistance than the first conductive layer 1 for collecting holes that have reached the first conductive layer 1. In the present embodiment, the bypass conductive portion 5 includes two bus bar portions 51, a plurality of connecting portions 52, and two pole collecting portions 53. The bypass conductive portion 5 is made of a material having a resistance lower than that of the first conductive layer 1 and contains, for example, Ag or carbon.
　図１８７および図１９３に示すように、１つのバスバー部５１は、第２端縁４５１および第１端縁４２１を全長にわたって覆っている。このバスバー部５１は、第１導電層１のうち第３端縁１０１と第１端縁４２１（第２端縁４５１）との間に位置する部分を覆っている。また、このバスバー部５１の第７端縁５１１は、平面視において第３端縁１０１と一致している。他方のバスバー部５１は、第２外方端縁４５２および第１外方端縁４２２を全長にわたって覆っている。このバスバー部５１は、第１導電層１の第２延出部１０３を覆っている。このバスバー部５１の第７外方端縁５１２は、平面視において第３外方端縁１０５と一致している。このような構成により、２つのバスバー部５１は、それぞれが第１導電層１と導通している。 As shown in FIG. 187 and FIG. 193, one bus bar portion 51 covers the second end edge 451 and the first end edge 421 over the entire length. The bus bar portion 51 covers a portion of the first conductive layer 1 located between the third end edge 101 and the first end edge 421 (second end edge 451). Further, the seventh end edge 511 of the bus bar portion 51 coincides with the third end edge 101 in plan view. The other bus bar portion 51 covers the second outer end edge 452 and the first outer end edge 422 over the entire length. The bus bar portion 51 covers the second extension portion 103 of the first conductive layer 1. The seventh outer end edge 512 of the bus bar portion 51 coincides with the third outer end edge 105 in plan view. With such a configuration, each of the two bus bar portions 51 is electrically connected to the first conductive layer 1.
　複数の連絡部５２は、第１保護樹脂層４５上に形成された部分であり、図１９３における図中内側のバスバー部５１と図中外側の連絡部５２とを連結している。２つの集極部５３は、一方が第１導電層１に導通しており、他方が第２導電層２に導通している。 The plurality of connecting portions 52 are portions formed on the first protective resin layer 45, and connect the inner bus bar portion 51 in FIG. 193 to the outer connecting portion 52 in the drawing. One of the two current collectors 53 is electrically connected to the first conductive layer 1, and the other is electrically connected to the second conductive layer 2.
　図１８７に示すように、第２端縁４５１および第１端縁４２１に対してバスバー部５１および第２保護樹脂層４６を間に挟んで隣接する領域から、支持基板４１の一部が露出領域４１１として露出している。また、露出領域４１１は、第１導電層１等によって覆われておらず、支持基板４１の表面が直接露出している。 As shown in FIG. 187, a part of the support substrate 41 is exposed from a region adjacent to the second end edge 451 and the first end edge 421 with the bus bar portion 51 and the second protective resin layer 46 interposed therebetween. 411 is exposed. The exposed region 411 is not covered with the first conductive layer 1 or the like, and the surface of the support substrate 41 is directly exposed.
　図１９５は、有機薄膜太陽電池モジュールＡ２０の第１導電層１を示す平面図である。図１９６は、有機薄膜太陽電池モジュールＡ２０の光電変換層３を示す平面図である。図１９７は、有機薄膜太陽電池モジュールＡ２０の第２導電層２を示す平面図である。図１９８は、有機薄膜太陽電池モジュールＡ２０の第１保護樹脂層４５およびバイパス導電部５を示す平面図である。図１９９は、有機薄膜太陽電池モジュールＡ２０の第２保護樹脂層４６を示す平面図である。 FIG. 195 is a plan view showing the first conductive layer 1 of the organic thin-film solar cell module A20. FIG. 196 is a plan view showing the photoelectric conversion layer 3 of the organic thin film solar cell module A20. FIG. 197 is a plan view showing the second conductive layer 2 of the organic thin film solar cell module A20. FIG. 198 is a plan view showing the first protective resin layer 45 and the bypass conductive portion 5 of the organic thin-film solar cell module A20. FIG. 199 is a plan view showing the second protective resin layer 46 of the organic thin-film solar cell module A20.
　有機薄膜太陽電池モジュールＡ２０においては、表示部７０２を外観に表すための開口１８、開口２８、開口３８、開口４５８、開口４６８等が設けられていない。このため、第３端縁１０１、第４内方退避端縁２０１、第５内方退避端縁３０１、第１端縁４２１、第２端縁４５１および第６端縁４６１は設けられていない。また、バイパス導電部５は、外周に沿うバスバー部５１を有し、連絡部５２は、有していない。 In the organic thin-film solar cell module A20, the opening 18, the opening 28, the opening 38, the opening 458, the opening 468, and the like for displaying the display portion 702 are not provided. For this reason, the 3rd edge 101, the 4th inward retracting edge 201, the 5th inward retracting edge 301, the 1st end edge 421, the 2nd end edge 451, and the 6th end edge 461 are not provided. In addition, the bypass conductive portion 5 has a bus bar portion 51 along the outer periphery, and does not have a connecting portion 52.
　本実施形態においては、図１９６に示すように、光電変換層３に複数の貫通部３５０（３５）が設けられている。これらの貫通部３５０は、それぞれがアルファベットを表している。この貫通部３５０を利用して、第１導電層１の第１端部１４と第２導電層２の第２端部２４とが接している点は、有機薄膜太陽電池モジュールＡ１９と同様である。 In the present embodiment, as shown in FIG. 196, the photoelectric conversion layer 3 is provided with a plurality of through portions 350 (35). Each of these penetrating portions 350 represents an alphabet. The point where the first end portion 14 of the first conductive layer 1 and the second end portion 24 of the second conductive layer 2 are in contact with each other by using the through portion 350 is the same as that of the organic thin film solar cell module A19. .
　次いで、有機薄膜太陽電池モジュールＡ１９の製造方法の一例について、図２００～図２０７を参照しつつ、以下に説明する。なお、これらの図においては、理解の便宜上、図１８７とは、天地逆に表されている。また、図２００～図２０７においては、図１８４に示した電子機器Ｂ１９のＣＬＸＸＸＶＩＩ－ＣＬＸＸＸＶＩＩ線における断面構造を生成する過程を示している。 Next, an example of a method for manufacturing the organic thin film solar cell module A19 will be described below with reference to FIGS. In these figures, for convenience of understanding, FIG. 187 is shown upside down. 200 to 207 show a process of generating a cross-sectional structure taken along the line CLXXXVII-CLXXXVII of the electronic apparatus B19 shown in FIG. 184.
　まず、図２００に示すように支持基板４１を用意する。そして、図２０１に示すように、支持基板４１の片面にたとえばスパッタ法などの一般的な手法によりＩＴＯからなる第１導電膜１０を積層する。次に、該ＩＴＯにパターニングを施し、開口１８、スリット１９等のパターンを形成するためのパターニングを行う。ここで、ＩＴＯへのパターニング手法としては、たとえばウエットエッチングを用いた手法、Ｇｒｅｅｎレーザー光等のレーザパターニングを用いた手法が適宜採用される。 First, a support substrate 41 is prepared as shown in FIG. Then, as shown in FIG. 201, the first conductive film 10 made of ITO is laminated on one surface of the support substrate 41 by a general method such as sputtering. Next, patterning is performed on the ITO to form patterns such as openings 18 and slits 19. Here, as a patterning method to ITO, for example, a method using wet etching and a method using laser patterning such as Green laser light are appropriately employed.
　次いで、図２０２に示すように、光電変換層３を形成する。光電変換層３の形成は、たとえば、スピンコート塗布により支持基板４１上および第１導電膜１０上に有機膜を成膜した後に、酸素プラズマエッチング、レーザパターニングを用いることによって、第５内方退避端縁３０１、第５外方退避端縁３０２、開口３８、貫通部３５０（意匠表示部３５）を有する構成に仕上げることにより行う。なお、光電変換層３は、上記に限定されず、スリットコート法、キャピラリーコート法、グラビア印刷などの手法によって、支持基板４１上および第１導電膜１０上に直接的に有機膜をパターニングすることで形成するようにしても良い。 Next, as shown in FIG. 202, the photoelectric conversion layer 3 is formed. The photoelectric conversion layer 3 is formed by, for example, depositing an organic film on the support substrate 41 and the first conductive film 10 by spin coating and then using oxygen plasma etching and laser patterning to perform fifth inward retraction. This is done by finishing the structure having an end edge 301, a fifth outward retracting end edge 302, an opening 38, and a penetrating part 350 (design display part 35). The photoelectric conversion layer 3 is not limited to the above, and an organic film is directly patterned on the support substrate 41 and the first conductive film 10 by a technique such as a slit coating method, a capillary coating method, or gravure printing. It may be formed by.
　次いで、図２０３に示すように、第２導電層２を形成する。第２導電層２の形成は、たとえば上述した金属を真空加熱蒸着法によって支持基板４１、第１導電膜１０および光電変換層３上に金属膜を成膜する。次に、該金属膜に例えばマスク層を用いたエッチングを行うことによりパターニングを施す。このパターニングにより、光電変換層３上に第４内方退避端縁２０１および第４外方退避端縁２０２を有する第２導電層２を形成する。 Next, as shown in FIG. 203, the second conductive layer 2 is formed. The second conductive layer 2 is formed, for example, by forming a metal film on the support substrate 41, the first conductive film 10 and the photoelectric conversion layer 3 using the above-described metal by vacuum heating vapor deposition. Next, the metal film is patterned by etching using, for example, a mask layer. By this patterning, the second conductive layer 2 having the fourth inner withdrawal edge 201 and the fourth outer withdrawal edge 202 is formed on the photoelectric conversion layer 3.
　次いで、図２０４に示すように、絶縁膜４２０を形成する。絶縁膜４２０の形成は、たとえばプラズマＣＶＤ法によってＳｉＮまたはＳｉＯＮなどの膜を支持基板４１、第１導電層１、光電変換層３および第２導電層２上に形成することにより行う。 Next, as shown in FIG. 204, an insulating film 420 is formed. The insulating film 420 is formed by forming a film such as SiN or SiON on the support substrate 41, the first conductive layer 1, the photoelectric conversion layer 3, and the second conductive layer 2 by, for example, plasma CVD.
　次いで、図２０５に示すように、第１保護樹脂層４５を形成する。第１保護樹脂層４５の形成は、たとえば紫外線硬化樹脂を含む液体樹脂材料をスクリーン印刷によって絶縁膜４２０上に塗布し、紫外線を照射することによって硬化させる。これにより、第２端縁４５１および第２外方端縁４５２を有する第１保護樹脂層４５が得られる。 Next, as shown in FIG. 205, a first protective resin layer 45 is formed. The first protective resin layer 45 is formed, for example, by applying a liquid resin material containing an ultraviolet curable resin on the insulating film 420 by screen printing and irradiating it with ultraviolet rays. As a result, the first protective resin layer 45 having the second end edge 451 and the second outer end edge 452 is obtained.
　次いで、図２０６に示すように、第１保護樹脂層４５をマスクとして用いたパターニングを絶縁膜４２０に施す。このパターニングは、たとえばフッ化水素を０．５５％～４．５％含むフッ化水素酸を用いたウエットエッチングによって行う。このようなフッ化水素酸は、紫外線硬化樹脂からなる第１保護樹脂層４５をほとんど溶解しない一方、ＳｉＮ等からなる絶縁膜４２０を選択的に溶解する。また、フッ化水素酸は、ＩＴＯ等からなる第１導電膜１０はほとんど溶解しない。この結果、第１端縁４２１および第１外方端縁４２２を有するパッシベーション層４２が形成される。第１端縁４２１は、平面視において第２端縁４５１と一致する。第１端縁４２１と第２端縁４５１とは、連続した面をなす。また、第１外方端縁４２２は、平面視において第２外方端縁４５２と一致する。第１外方端縁４２２と第２外方端縁４５２とは、連続した面をなす。 Next, as shown in FIG. 206, the insulating film 420 is patterned using the first protective resin layer 45 as a mask. This patterning is performed, for example, by wet etching using hydrofluoric acid containing 0.55% to 4.5% hydrogen fluoride. Such hydrofluoric acid hardly dissolves the first protective resin layer 45 made of an ultraviolet curable resin, but selectively dissolves the insulating film 420 made of SiN or the like. Further, hydrofluoric acid hardly dissolves the first conductive film 10 made of ITO or the like. As a result, a passivation layer 42 having a first edge 421 and a first outer edge 422 is formed. The first edge 421 coincides with the second edge 451 in plan view. The first edge 421 and the second edge 451 form a continuous surface. The first outer end edge 422 coincides with the second outer end edge 452 in plan view. The first outer end edge 422 and the second outer end edge 452 form a continuous surface.
　次いで、図２０７に示すように、バイパス導電部５を形成する。バイパス導電部５の形成は、たとえばＡｇまたはカーボンを含むペーストを塗布した後に、たとえば乾燥などの手法によってこのペーストを硬化させることによって行う。 Next, as shown in FIG. 207, the bypass conductive portion 5 is formed. The bypass conductive portion 5 is formed by, for example, applying a paste containing Ag or carbon and then curing the paste by a technique such as drying.
　次いで、第１導電膜１０にパターニングを施す。このパターニングは、たとえば濃塩酸と濃硝酸とが３：１の比率で混合された王水を用いて行う。このパターニングにより、第１導電膜１０のうちバイパス導電部５や第１保護樹脂層４５から露出した部分が選択的に除去される。この結果、第３端縁１０１等を有する第１導電層１が形成される。次いで、第２保護樹脂層４６を形成する。第２保護樹脂層４６の形成は、たとえば紫外線硬化樹脂を含む液体樹脂材料をスクリーン印刷によって絶縁膜４２０上に塗布し、紫外線を照射することによって硬化させる。これにより、第６端縁４６１および第６外方端縁４６２を有する第２保護樹脂層４６が得られ、保護樹脂層４が形成される。以上の工程を経ることにより、有機薄膜太陽電池モジュールＡ１９が得られる。有機薄膜太陽電池モジュールＡ２０の製造も同様に行うことができる。 Next, the first conductive film 10 is patterned. This patterning is performed, for example, using aqua regia in which concentrated hydrochloric acid and concentrated nitric acid are mixed at a ratio of 3: 1. By this patterning, portions of the first conductive film 10 exposed from the bypass conductive portion 5 and the first protective resin layer 45 are selectively removed. As a result, the first conductive layer 1 having the third edge 101 and the like is formed. Next, the second protective resin layer 46 is formed. The second protective resin layer 46 is formed by, for example, applying a liquid resin material containing an ultraviolet curable resin on the insulating film 420 by screen printing and curing it by irradiating with ultraviolet rays. Thereby, the 2nd protective resin layer 46 which has the 6th edge 461 and the 6th outside edge 462 is obtained, and protective resin layer 4 is formed. Through the above steps, an organic thin-film solar cell module A19 is obtained. The organic thin film solar cell module A20 can be manufactured in the same manner.
　次に、有機薄膜太陽電池モジュールＡ１９および電子機器Ｂ１９の作用について説明する。 Next, the operation of the organic thin film solar cell module A19 and the electronic device B19 will be described.
　本実施形態によれば、バイパス導電部５を設けることにより、第１導電層１に拡散してきた正孔を、バスバー部５１を経由して集極部５３へと導くことができる。バイパス導電部５は、第１導電層１よりも低抵抗の材料からなる。このため、バイパス導電部５によって、より低抵抗な導通経路が構成される。このような導通経路に光電変換層３によって発電された電力を導くことにより、通電による損失を抑制することができる。また、バイパス導電部５は、保護樹脂層４によって覆われている。このため、保護樹脂層４が外気等との反応によって劣化することを回避することができる。したがって、有機薄膜太陽電池モジュールＡ１９，Ａ２０および電子機器Ｂ１９の通電部分の劣化を回避しつつ通電損失を抑制することができる。 According to the present embodiment, by providing the bypass conductive portion 5, holes diffused in the first conductive layer 1 can be guided to the collector portion 53 via the bus bar portion 51. The bypass conductive portion 5 is made of a material having a resistance lower than that of the first conductive layer 1. For this reason, the bypass conductive portion 5 forms a lower resistance conduction path. By guiding the power generated by the photoelectric conversion layer 3 to such a conduction path, loss due to energization can be suppressed. Further, the bypass conductive portion 5 is covered with the protective resin layer 4. For this reason, it can avoid that the protective resin layer 4 deteriorates by reaction with external air etc. Therefore, it is possible to suppress energization loss while avoiding deterioration of energized portions of the organic thin film solar cell modules A19, A20 and the electronic device B19.
　図１８７に示すように、第７端縁５１１および第７外方端縁５１２は、第６端縁４６１および第６外方端縁４６２の内側に位置している。すなわち、バイパス導電部５は、保護樹脂層４によって完全に覆われている。これは、バイパス導電部５の保護に好ましい。 187, the seventh edge 511 and the seventh outer edge 512 are located inside the sixth edge 461 and the sixth outer edge 462. That is, the bypass conductive portion 5 is completely covered with the protective resin layer 4. This is preferable for protecting the bypass conductive portion 5.
　第２端縁４５１および第２外方端縁４５２に隣接する領域において支持基板４１が露出している。この部位には、パッシベーション層４２や第１保護樹脂層４５が形成されていない。したがって、この部位をより透明に仕上げることが可能であり、表示部７０２をより鮮明に外観に表すことができる。 The support substrate 41 is exposed in a region adjacent to the second edge 451 and the second outer edge 452. In this portion, the passivation layer 42 and the first protective resin layer 45 are not formed. Therefore, it is possible to finish this portion more transparent, and the display portion 702 can be expressed more clearly.
　第２端縁４５１および第１端縁４２１に隣接する領域のうちバスバー部５１によって覆われた僅かな領域を除いて、支持基板４１には第１導電層１が形成されていない。第１導電層１は、ＩＴＯからなるものの、光線のあたり具合によっては、うっすらと着色されたものとして視認される。本実施形態においては、表示部７０２を外観に表すための領域をことさらに透明に仕上げることが可能であり、より美麗な外観を実現することができる。 The first conductive layer 1 is not formed on the support substrate 41 except for a small area covered with the bus bar portion 51 among the areas adjacent to the second edge 451 and the first edge 421. Although the first conductive layer 1 is made of ITO, the first conductive layer 1 is visually recognized as being slightly colored depending on how light hits. In the present embodiment, it is possible to finish the region for displaying the display unit 702 in an even more transparent manner, and a more beautiful appearance can be realized.
　光電変換層３の第５内方退避端縁３０１および第２導電層２の第４内方退避端縁２０１が、第１端縁４２１および第２端縁４５１と離間していることにより、第２導電層２および光電変換層３がバイパス導電部５と不当に導通することを回避することができる。また、第４内方退避端縁２０１および第５内方退避端縁３０１と第１端縁４２１および第２端縁４５１との間にパッシベーション層４２が介在していることにより、第２導電層２および光電変換層３とバイパス導電部５のバスバー部５１とがショートすることをより確実に防止可能である。 The fifth inward retracting edge 301 of the photoelectric conversion layer 3 and the fourth inward retracting edge 201 of the second conductive layer 2 are separated from the first end edge 421 and the second end edge 451, thereby The two conductive layers 2 and the photoelectric conversion layer 3 can be prevented from being unduly conducted with the bypass conductive portion 5. Further, since the passivation layer 42 is interposed between the fourth inner retracting edge 201 and the fifth inner retracting edge 301 and the first end edge 421 and the second end edge 451, the second conductive layer 2 and the photoelectric conversion layer 3 and the bus bar portion 51 of the bypass conductive portion 5 can be more reliably prevented from short-circuiting.
　第１保護樹脂層４５をマスクとして用いたパターニングを絶縁膜４２０に施すことにより、第１保護樹脂層４５と同形状のパッシベーション層４２を形成することができる。すなわち、紫外線硬化樹脂などの形状形成に優れた材質を用いて第１保護樹脂層４５を形成すれば、必ずしも形状形成に優れていない材質からなるパッシベーション層４２を所望の形状に仕上げることができる。なお、第１保護樹脂層４５は、パッシベーション層４２を形成した後に除去してもよい。ただし、第１保護樹脂層４５を残存させた場合、水分やパーティクル等の第１導電層１、第２導電層２および光電変換層３等への侵入を防止する効果や、有機薄膜太陽電池モジュールＡ１９の強度向上を図る効果が期待できる。 The passivation layer 42 having the same shape as the first protective resin layer 45 can be formed by patterning the insulating film 420 using the first protective resin layer 45 as a mask. That is, if the first protective resin layer 45 is formed using a material excellent in shape formation such as an ultraviolet curable resin, the passivation layer 42 made of a material not necessarily excellent in shape formation can be finished in a desired shape. Note that the first protective resin layer 45 may be removed after the passivation layer 42 is formed. However, when the first protective resin layer 45 is left, the effect of preventing moisture and particles from entering the first conductive layer 1, the second conductive layer 2, the photoelectric conversion layer 3, etc., and the organic thin film solar cell module The effect of improving the strength of A19 can be expected.
　バイパス導電部５を形成した後に第１導電層１にパターニングを施すことにより、バイパス導電部５の連絡部５２は、第１導電層１の端面ではなく、第１導電層１のうち平面視において有意な面積を有する部分（第２延出部１０３など）に接する構成となる。これは、第１導電層１とバイパス導電部５との接触抵抗を低下させるとともに、確実な導通に有利である。 By patterning the first conductive layer 1 after forming the bypass conductive portion 5, the connecting portion 52 of the bypass conductive portion 5 is not an end face of the first conductive layer 1 but in a plan view of the first conductive layer 1. It becomes the structure which touches the part (2nd extension part 103 etc.) which has a significant area. This is advantageous for reliable conduction while lowering the contact resistance between the first conductive layer 1 and the bypass conductive portion 5.
　図２０８～図２１９は、本発明の変形例および他の実施形態を示している。なお、これらの図において、上記実施形態と同一または類似の要素には、上記実施形態と同一の符号を付しており、適宜説明を省略する。 208 to 219 show a modification of the present invention and other embodiments. In these drawings, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment, and description thereof will be omitted as appropriate.
　図２０８は、電子機器Ｂ１９および有機薄膜太陽電池モジュールＡ１９の変形例を示している。本変形例においては第２保護樹脂層４６が、非透光部４６４および透光部４６５を有する。非透光部４６４は、平面視においてバイパス導電部５と重なり、且つ第１端縁４２１よりも第１外方端縁４２２側の領域に設けられている。非透光部４６４は、非透光の材質からなり、たとえば白色の樹脂からなる。透光部４６５は、非透光部４６４に対して第１外方端縁４２２とは反対側に位置する領域を含む領域に設けられている。図示された例においては、透光部４６５は、図中右方のバスバー部５１を跨ぐようにして形成されている。また、透光部４６５は、その一部が支持基板４１に接している。本変形例によっても、バイパス導電部５を保護することができる。また、非透光部４６４を有することにより、紫外線等の光を受けることによってバイパス導電部５が劣化すること等を抑制することができる。 FIG. 208 shows a modification of the electronic device B19 and the organic thin film solar cell module A19. In the present modification, the second protective resin layer 46 has a non-light-transmitting portion 464 and a light-transmitting portion 465. The non-light-transmissive portion 464 overlaps with the bypass conductive portion 5 in a plan view and is provided in a region closer to the first outer end edge 422 than the first end edge 421. The non-translucent portion 464 is made of a non-translucent material, for example, white resin. The translucent portion 465 is provided in a region including a region located on the opposite side to the first outer end edge 422 with respect to the non-translucent portion 464. In the illustrated example, the translucent portion 465 is formed so as to straddle the bus bar portion 51 on the right side in the drawing. Further, a part of the translucent portion 465 is in contact with the support substrate 41. Also according to this modification, the bypass conductive portion 5 can be protected. Moreover, by having the non-light-transmissive part 464, it can suppress that the bypass conductive part 5 deteriorates by receiving light, such as an ultraviolet-ray.
　図２０９は、電子機器Ｂ１９および有機薄膜太陽電池モジュールＡ１９の変形例を示している。本変形例においては、保護樹脂層４の第２保護樹脂層４６が有機薄膜太陽電池モジュールＡ１９と表示部７０２とを接合する接合層を兼ねている。この場合、第２保護樹脂層４６は、透明な材質からなる。 FIG. 209 shows a modification of the electronic device B19 and the organic thin film solar cell module A19. In the present modification, the second protective resin layer 46 of the protective resin layer 4 also serves as a bonding layer for bonding the organic thin film solar cell module A19 and the display unit 702. In this case, the second protective resin layer 46 is made of a transparent material.
　図２１０は、電子機器Ｂ１９および有機薄膜太陽電池モジュールＡ１９の変形例を示している。図２１１は、本変形例の第１導電層１を示す平面図である。本変形例においては、第１導電層１は、上述した第３端縁１０１および第３端縁１０１によって規定される開口１８を有していない。すなわち、本変形例においては、第１導電層１は、平面視において表示部７０２と重なっている。 FIG. 210 shows a modification of the electronic device B19 and the organic thin film solar cell module A19. FIG. 211 is a plan view showing the first conductive layer 1 of the present modification. In the present modification, the first conductive layer 1 does not have the third edge 101 and the opening 18 defined by the third edge 101 described above. That is, in the present modification, the first conductive layer 1 overlaps the display unit 702 in plan view.
　図２１２および図２１３は、本発明の第２１実施形態に基づく有機薄膜太陽電池モジュールを示している。本実施形態の有機薄膜太陽電池モジュールＡ２１は、第１導電層１、第２導電層２、光電変換層３、支持基板４１、パッシベーション層４２、保護樹脂層４およびバイパス導電部５を備えている。有機薄膜太陽電池モジュールＡ２１の平面視形状は特に限定されず、図示された例は、上述した有機薄膜太陽電池モジュールＡ１９と同様の平面視形状である場合の例である。図２１２は、有機薄膜太陽電池モジュールＡ１９における図１８７に相当する要部拡大断面図である。図２１３は、第１保護樹脂層４５およびバイパス導電部５を省略した要部拡大平面図である。 212 and 213 show an organic thin-film solar cell module according to the twenty-first embodiment of the present invention. The organic thin-film solar cell module A21 of this embodiment includes a first conductive layer 1, a second conductive layer 2, a photoelectric conversion layer 3, a support substrate 41, a passivation layer 42, a protective resin layer 4, and a bypass conductive portion 5. . The planar view shape of the organic thin film solar cell module A21 is not particularly limited, and the illustrated example is an example in the case of the same planar view shape as the organic thin film solar cell module A19 described above. FIG. 212 is an enlarged cross-sectional view of a main part corresponding to FIG. 187 in the organic thin film solar cell module A19. FIG. 213 is an essential part enlarged plan view in which the first protective resin layer 45 and the bypass conductive portion 5 are omitted.
　本実施形態のパッシベーション層４２の第１端縁４２１および第１外方端縁４２２は、図２１２に示すように、凹凸形状の端面となっている。また、第１端縁４２１は全体として、支持基板４１の厚さ方向において支持基板４１から離間するほど平面視において第３端縁１０１から離間する向きに傾いている。また、第１外方端縁４２２は全体として、支持基板４１の厚さ方向において支持基板４１から離間するほど第１導電層１の第２延出部１０３から離間する向きに傾いている。また、本実施形態の第１端縁４２１は、図２１３に示すように、平面視において第３端縁１０１から離間した非直線状の形状である。第１端縁４２１は、たとえば複数の折れ線や曲線が結合された形状である。第１外方端縁４２２も同様に、平面視において被直線状の形状である。 The first edge 421 and the first outer edge 422 of the passivation layer 42 of the present embodiment are concave and convex end faces as shown in FIG. Further, as a whole, the first edge 421 is inclined in a direction away from the third edge 101 in plan view as the distance from the support substrate 41 in the thickness direction of the support substrate 41 is increased. Further, the first outer end edge 422 as a whole is inclined in a direction away from the second extending portion 103 of the first conductive layer 1 as it is separated from the support substrate 41 in the thickness direction of the support substrate 41. In addition, as shown in FIG. 213, the first end edge 421 of the present embodiment has a non-linear shape spaced from the third end edge 101 in plan view. The first end edge 421 has, for example, a shape in which a plurality of broken lines and curves are combined. Similarly, the first outer end edge 422 has a linear shape in plan view.
　バイパス導電部５の１つのバスバー部５１は、パッシベーション層４２の第１端縁４２１を全長にわたって覆っている。このバスバー部５１は、第１導電層１のうち第３端縁１０１と第１端縁４２１との間に位置する第１延出部１０４を覆っている。また、このバスバー部５１の第７端縁５１１は、平面視において第３端縁１０１に対して第１端縁４２１とは反対側に位置している。これにより、このバスバー部５１は、支持基板４１に直接接している。他方のバスバー部５１は、パッシベーション層４２の第１外方端縁４２２を全長にわたって覆っている。このバスバー部５１は、第１導電層１の第２延出部１０３を覆っている。また、このバスバー部５１の第７外方端縁５１２は、平面視において第３外方端縁１０５に対して第１外方端縁４２２とは反対側に位置している。これにより、このバスバー部５１は、支持基板４１に直接接している。このような構成により、２つのバスバー部５１は、それぞれが第１導電層１と導通している。 One bus bar portion 51 of the bypass conductive portion 5 covers the first edge 421 of the passivation layer 42 over the entire length. The bus bar portion 51 covers the first extending portion 104 located between the third end edge 101 and the first end edge 421 in the first conductive layer 1. Further, the seventh end edge 511 of the bus bar portion 51 is located on the side opposite to the first end edge 421 with respect to the third end edge 101 in plan view. Accordingly, the bus bar portion 51 is in direct contact with the support substrate 41. The other bus bar portion 51 covers the first outer end edge 422 of the passivation layer 42 over the entire length. The bus bar portion 51 covers the second extension portion 103 of the first conductive layer 1. Further, the seventh outer end edge 512 of the bus bar portion 51 is located on the side opposite to the first outer end edge 422 with respect to the third outer end edge 105 in a plan view. Accordingly, the bus bar portion 51 is in direct contact with the support substrate 41. With such a configuration, each of the two bus bar portions 51 is electrically connected to the first conductive layer 1.
　連絡部５２は、パッシベーション層４２の表面４２３上に形成された部分である。連絡部５２は、たとえば２つのバスバー部５１同士や、バイパス導電部５のうちバスバー部５１および連絡部５２以外の部位とバスバー部５１を連結している。 The connecting part 52 is a part formed on the surface 423 of the passivation layer 42. The connection part 52 connects the bus bar part 51 to parts other than the bus bar part 51 and the connection part 52 of the two bus bar parts 51 or the bypass conductive part 5, for example.
　本実施形態の保護樹脂層４は、第１保護樹脂層４５のみを有している。図２１２に示すように、第１保護樹脂層４５は、パッシベーション層４２およびバイパス導電部５を覆っており、たとえば紫外線硬化樹脂からなる。また、第１保護樹脂層４５は、有機薄膜太陽電池モジュールＡ２１と上述した表示部７０２とを接合するための透明な接合層を兼ねていてもよい。図示された例においては、第２端縁４５１の第２端縁４５１は、平面視において第７端縁５１１に対して第１端縁４２１とは反対側に位置している。第１保護樹脂層４５の第２外方端縁４５２は、平面視において第７外方端縁５１２に対して第１外方端縁４２２とは反対側に位置している。これにより、第１保護樹脂層４５は、支持基板４１に直接接する部分を有する。また、第１保護樹脂層４５は、パッシベーション層４２の表面４２３のうちバイパス導電部５から露出した部分を覆っている。 The protective resin layer 4 of the present embodiment has only the first protective resin layer 45. As shown in FIG. 212, the first protective resin layer 45 covers the passivation layer 42 and the bypass conductive portion 5, and is made of, for example, an ultraviolet curable resin. Moreover, the 1st protective resin layer 45 may serve as the transparent joining layer for joining organic thin-film solar cell module A21 and the display part 702 mentioned above. In the illustrated example, the second end edge 451 of the second end edge 451 is located on the opposite side of the first end edge 421 with respect to the seventh end edge 511 in plan view. The second outer end edge 452 of the first protective resin layer 45 is located on the opposite side of the first outer end edge 422 with respect to the seventh outer end edge 512 in plan view. Thus, the first protective resin layer 45 has a portion that directly contacts the support substrate 41. Further, the first protective resin layer 45 covers a portion of the surface 423 of the passivation layer 42 that is exposed from the bypass conductive portion 5.
　次に、有機薄膜太陽電池モジュールＡ２１の製造方法の一例について以下に説明する。なお、以下の説明において参照する図においては、理解の便宜上、図２１２とは、天地逆に表されている。 Next, an example of a manufacturing method of the organic thin film solar cell module A21 will be described below. In the drawings referred to in the following description, for convenience of understanding, FIG. 212 is shown upside down.
　まず、図２００に示した支持基板４１を用意する。そして、図２０１に示したように、支持基板４１の片面にたとえばスパッタ法などの一般的な手法によりＩＴＯからなる第１導電膜１０を積層する。次いで、図２０２に示したように光電変換層３を形成し、図２０３に示したように第２導電層２を形成する。 First, the support substrate 41 shown in FIG. 200 is prepared. Then, as shown in FIG. 201, the first conductive film 10 made of ITO is laminated on one surface of the support substrate 41 by a general method such as sputtering. Next, the photoelectric conversion layer 3 is formed as shown in FIG. 202, and the second conductive layer 2 is formed as shown in FIG.
　次に図２１４に示すように、レーザー光Ｌｚ１を用いたレーザパターニングを用いた手法によって、第１導電膜１０にパターニングを施す。これにより、第１導電膜１０には、スリット１９１およびスリット１９２が形成される。レーザー光Ｌｚ１は、第１導電膜１０をレーザパターニング可能なものであれば特に限定されず、たとえばＩＲレーザー光を用いることができる。スリット１９１を構成する第１導電膜１０の端縁のうち図示された第２導電層２および光電変換層３側に位置するものは、第３端縁１０１となる。第１導電膜１０のうち第５内方退避端縁３０１とスリット１９１との間の部分は、第１延出部１０４となる。スリット１９２を構成する第１導電膜１０の端縁のうち図示された第２導電層２および光電変換層３側に位置するものは、第３外方端縁１０５となる。第１導電膜１０のうちスリット１９２と光電変換層３の第５外方退避端縁３０２との間の部分は、第２延出部１０３となる。 Next, as shown in FIG. 214, the first conductive film 10 is patterned by a technique using laser patterning using the laser beam Lz1. Thereby, a slit 191 and a slit 192 are formed in the first conductive film 10. The laser beam Lz1 is not particularly limited as long as the first conductive film 10 can be subjected to laser patterning. For example, an IR laser beam can be used. Of the edges of the first conductive film 10 constituting the slit 191, the one located on the second conductive layer 2 and the photoelectric conversion layer 3 side shown is the third edge 101. A portion of the first conductive film 10 between the fifth inward retracting edge 301 and the slit 191 becomes the first extending portion 104. Of the edges of the first conductive film 10 constituting the slit 192, the one located on the second conductive layer 2 and the photoelectric conversion layer 3 side shown is the third outer edge 105. A portion of the first conductive film 10 between the slit 192 and the fifth outer retraction edge 302 of the photoelectric conversion layer 3 becomes the second extension portion 103.
　なお、光電変換層３の形成に先立って、第１導電膜１０にスリット１９１およびスリット１９２を形成するためのパターニングを施してもよい。当該パターニングに用いられる手法としては、たとえばウエットエッチングを用いた手法、酸素プラズマエッチングを用いた手法等が適宜採用される。また、第１導電膜１０は、上記に限られず、たとえばナノインプリントを用いた手法によって、支持基板４１上に直接的にＩＴＯをパターニングすることで形成するようにしても良い。 Prior to the formation of the photoelectric conversion layer 3, patterning for forming the slit 191 and the slit 192 in the first conductive film 10 may be performed. As a technique used for the patterning, for example, a technique using wet etching, a technique using oxygen plasma etching, or the like is appropriately employed. The first conductive film 10 is not limited to the above, and may be formed by patterning ITO directly on the support substrate 41 by, for example, a technique using nanoimprint.
　次いで、図２１５に示すように、絶縁膜４２０を形成する。絶縁膜４２０の形成は、たとえばプラズマＣＶＤ法によってＳｉＮまたはＳｉＯＮなどの膜を支持基板４１、第１導電膜１０、光電変換層３および第２導電層２上に形成することにより行う。 Next, as shown in FIG. 215, an insulating film 420 is formed. The insulating film 420 is formed by forming a film such as SiN or SiON on the support substrate 41, the first conductive film 10, the photoelectric conversion layer 3, and the second conductive layer 2 by, for example, plasma CVD.
　次いで、絶縁膜４２０を部分的に除去することによる第１端縁４２１を有するパッシベーション層４２の形成および第１導電膜１０の部分的な除去による第１導電層１の形成を含み、第１端縁４２１に隣接する領域において支持基板４１を露出させる工程を行う。本実施形態においては、支持基板４１を露出させる工程は、図２１６に示すように、絶縁膜４２０を透して第１導電膜１０にレーザー光Ｌｚ２を照射することにより、第１導電膜１０および絶縁膜４２０を部分的に除去する処理を含む。同図において、第１導電膜１０のうち相対的に濃い複数の離散点からなるハッチングが付された部分は、レーザー光Ｌｚ２が照射される部分を表している。また、絶縁膜４２０のうち相対的に薄い複数の離散点からなるハッチングが付された部分は、レーザー光Ｌｚ２の照射に起因して除去される部分を表している。なお、レーザー光Ｌｚ２を用いた手法に限定されず、たとえばエッチングを用いた手法を選択してもよい。 Then, forming the passivation layer 42 having the first edge 421 by partially removing the insulating film 420 and forming the first conductive layer 1 by partially removing the first conductive film 10, A step of exposing the support substrate 41 in a region adjacent to the edge 421 is performed. In the present embodiment, the step of exposing the support substrate 41 is performed by irradiating the first conductive film 10 with the laser light Lz2 through the insulating film 420, as shown in FIG. A process of partially removing the insulating film 420 is included. In the figure, a hatched portion of a plurality of relatively dark discrete points in the first conductive film 10 represents a portion irradiated with the laser light Lz2. In addition, a hatched portion of a plurality of relatively thin discrete points in the insulating film 420 represents a portion that is removed due to irradiation with the laser light Lz2. Note that the method is not limited to the method using the laser beam Lz2, and for example, a method using etching may be selected.
　より具体的には、絶縁膜４２０を透して、第１導電膜１０のうちスリット１９１およびスリット１９２を挟んで図示された第２導電層２および光電変換層３とは反対側に位置する部分に、レーザー光Ｌｚ２を照射する。レーザー光Ｌｚ２としては、たとえば波長が１，０６４ｎｍ程度のＩＲレーザー光が選択される。このレーザー光Ｌｚ２が照射された第１導電膜１０の部分は、顕著なエネルギー投入によって瞬時に揮発する挙動を示す。 More specifically, a portion of the first conductive film 10 that is located on the opposite side of the second conductive layer 2 and the photoelectric conversion layer 3 that are illustrated across the slit 191 and the slit 192 through the insulating film 420. Are irradiated with laser light Lz2. As the laser beam Lz2, for example, an IR laser beam having a wavelength of about 1,064 nm is selected. The portion of the first conductive film 10 irradiated with the laser light Lz2 exhibits a behavior that volatilizes instantaneously when significant energy is applied.
　一方、上述したレーザー光Ｌｚ２の波長は、第１導電膜１０に比べて絶縁膜４２０が吸収しづらいものが選択されている。このため、絶縁膜４２０は、レーザー光Ｌｚ２によって直接に破壊されるものではない。しかし、絶縁膜４２０のうち第１導電膜１０と接する部分は、第１導電膜１０を介して支持基板４１によって支持されている。第１導電膜１０がレーザー光Ｌｚ２の照射によって揮発すると、絶縁膜４２０一部は、支持基板４１によって支持されないものとなる。また、レーザー光Ｌｚ２が照射された第１導電膜１０の部分（図中において相対的に濃い複数の離散点からなるハッチングが付された部分）に重なっている絶縁膜４２０は、第１導電膜１０が揮発したことによる圧力によってその一部が飛散する。 On the other hand, the wavelength of the laser beam Lz2 described above is selected such that the insulating film 420 is less likely to absorb than the first conductive film 10. For this reason, the insulating film 420 is not directly destroyed by the laser beam Lz2. However, the portion of the insulating film 420 that contacts the first conductive film 10 is supported by the support substrate 41 via the first conductive film 10. When the first conductive film 10 is volatilized by irradiation with the laser beam Lz2, a part of the insulating film 420 is not supported by the support substrate 41. Further, the insulating film 420 overlapping the portion of the first conductive film 10 irradiated with the laser light Lz2 (the hatched portion including a plurality of relatively dark discrete points in the drawing) is the first conductive film. Part of it is scattered by the pressure due to volatilization of 10.
　また、発明者の研究の結果、絶縁膜４２０のうち、レーザー光Ｌｚ２が照射された第１導電膜１０の部分に隣接する部分は、第１導電膜１０の揮発の影響によって飛散することが判明した。図２１６においては、絶縁膜４２０のうちレーザー光Ｌｚ２の照射に起因して飛散する部分を、相対的に薄い複数の離散点からなるハッチングを付している。本実施形態においては、絶縁膜４２０のうち飛散する部分は、スリット１９１およびスリット１９２を超えて、第２導電層２および光電変換層３側に存在する。ただし、第２導電層２および光電変換層３の一部を露出させる程度に、パッシベーション層４２が破壊されないように、スリット１９１およびスリット１９２の大きさや位置、およびレーザー光Ｌｚ２の照射範囲や出力等を適宜調節している。この結果、絶縁膜４２０のうちスリット１９１側に位置する端縁が第１端縁４２１となり、スリット１９２側に位置する端縁が第１外方端縁４２２となる。また、第１導電膜１０のうちスリット１９１に隣接する複数の離散点からなるハッチング部分は、レーザー光Ｌｚ２の照射により除去される。このため、第１導電膜１０のうちスリット１９１に対して平面視において光電変換層３側に位置する端縁が、第３端縁１０１となり、第１導電膜１０のうちスリット１９２に対して平面視において光電変換層３側に位置する端縁が、第３外方端縁１０５となる。また、第１導電膜１０のうちスリット１９２に隣接する複数の離散点からなるハッチング部分は、レーザー光Ｌｚ２の照射により除去される。また、スリット１９１およびスリット１９２に隣接する絶縁膜４２０の一部がレーザー光Ｌｚ２の照射に伴って飛散することにより、第１導電膜１０のうちスリット１９１およびスリット１９２に隣接する一部が、パッシベーション層４２から露出する。この部分が、第１延出部１０４および第２延出部１０３となる。 As a result of the inventors' research, it has been found that a portion of the insulating film 420 adjacent to the portion of the first conductive film 10 irradiated with the laser light Lz2 is scattered due to the volatility of the first conductive film 10. did. In FIG. 216, portions of the insulating film 420 that are scattered due to the irradiation of the laser beam Lz2 are hatched with a plurality of relatively thin discrete points. In the present embodiment, the scattered portion of the insulating film 420 exists on the second conductive layer 2 and photoelectric conversion layer 3 side beyond the slit 191 and the slit 192. However, the size and position of the slit 191 and the slit 192, the irradiation range and output of the laser beam Lz2, etc. so that the passivation layer 42 is not destroyed to such an extent that the second conductive layer 2 and the photoelectric conversion layer 3 are partially exposed. Is adjusted accordingly. As a result, the edge located on the slit 191 side of the insulating film 420 becomes the first edge 421, and the edge located on the slit 192 side becomes the first outer edge 422. Moreover, the hatching part which consists of several discrete points adjacent to the slit 191 among the 1st electrically conductive films 10 is removed by irradiation of the laser beam Lz2. For this reason, the edge located in the photoelectric conversion layer 3 side in planar view with respect to the slit 191 in the first conductive film 10 becomes the third edge 101, and the first conductive film 10 is planar with respect to the slit 192. The edge located on the photoelectric conversion layer 3 side when viewed is the third outer edge 105. Moreover, the hatching part which consists of a some discrete point adjacent to the slit 192 among the 1st electrically conductive films 10 is removed by irradiation of the laser beam Lz2. In addition, a part of the insulating film 420 adjacent to the slit 191 and the slit 192 is scattered with the irradiation of the laser light Lz2, so that a part of the first conductive film 10 adjacent to the slit 191 and the slit 192 is passivation. Exposed from layer 42. This portion becomes the first extension portion 104 and the second extension portion 103.
　以上に述べたレーザー光Ｌｚ２の照射によって、第１導電膜１０および絶縁膜４２０の部分的な除去を行うことにより、図２１７に示すように、第１端縁４２１および第１外方端縁４２２を有するパッシベーション層４２が形成される。また、第１端縁４２１および第１外方端縁４２２から延出する部分を有する第１導電層１が形成される。第１導電層１には、第３端縁１０１および第２延出部１０３が形成される。なお、図２１６に示した工程の後に、支持基板４１上に残存した第１導電膜１０等の除去を目的として、たとえば王水を用いた洗浄処理を行ってもよい。 By partially removing the first conductive film 10 and the insulating film 420 by the irradiation with the laser beam Lz2 described above, as shown in FIG. 217, the first edge 421 and the first outer edge 422 are obtained. A passivation layer 42 is formed. Further, the first conductive layer 1 having portions extending from the first end edge 421 and the first outer end edge 422 is formed. In the first conductive layer 1, a third end edge 101 and a second extending portion 103 are formed. Note that after the process shown in FIG. 216, for example, a cleaning process using aqua regia may be performed for the purpose of removing the first conductive film 10 and the like remaining on the support substrate 41.
　次いで、図２１８に示すようにバイパス導電部５を形成する。バイパス導電部５を形成する。バイパス導電部５の形成は、たとえばＡｇまたはカーボンを含むペーストを塗布した後に、たとえば乾燥などの手法によってこのペーストを硬化させることによって行う。バイパス導電部５の形成は、第１導電層１のうちパッシベーション層４２から延出した部分を覆うようにして行う。また、バイパス導電部５は、支持基板４１に直接触れるように形成されることが好ましい。これにより、バスバー部５１および連絡部５２を有するバイパス導電部５が得られる。 Next, the bypass conductive portion 5 is formed as shown in FIG. The bypass conductive portion 5 is formed. The bypass conductive portion 5 is formed by, for example, applying a paste containing Ag or carbon and then curing the paste by a technique such as drying. The bypass conductive portion 5 is formed so as to cover a portion of the first conductive layer 1 extending from the passivation layer 42. The bypass conductive portion 5 is preferably formed so as to directly touch the support substrate 41. Thereby, the bypass conductive part 5 having the bus bar part 51 and the connecting part 52 is obtained.
　この後は、バイパス導電部５およびパッシベーション層４２を覆うように、第１保護樹脂層４５（保護樹脂層４）を形成する。第１保護樹脂層４５の形成は、たとえば紫外線硬化樹脂を含む液体樹脂材料をスクリーン印刷によってパッシベーション層４２上に塗布し、紫外線を照射することによって硬化させる。以上の工程を経ることにより、図２１２に示す有機薄膜太陽電池モジュールＡ２１が完成する。 Thereafter, the first protective resin layer 45 (protective resin layer 4) is formed so as to cover the bypass conductive portion 5 and the passivation layer 42. The first protective resin layer 45 is formed by, for example, applying a liquid resin material containing an ultraviolet curable resin on the passivation layer 42 by screen printing and irradiating it with ultraviolet rays. Through the above steps, the organic thin-film solar cell module A21 shown in FIG. 212 is completed.
　このような実施形態によっても、有機薄膜太陽電池モジュールＡ１９および電子機器Ｂ１９の通電部分の劣化を回避しつつ通電損失を抑制することができる。また、図２１２に示すように、バイパス導電部５のバスバー部５１は、第１導電層１の第１延出部１０４および第２延出部１０３を覆っている。これにより、第１導電層１とバイパス導電部５との導通面積を拡大することが可能であり、低抵抗化に好ましい。第１端縁４２１および第１外方端縁４２２が、凹凸形状であることにより、第１端縁４２１および第１外方端縁４２２とバイパス導電部５のバスバー部５１との接合強度を高めることが可能である。 Also according to such an embodiment, it is possible to suppress energization loss while avoiding deterioration of energized portions of the organic thin film solar cell module A19 and the electronic device B19. As shown in FIG. 212, the bus bar portion 51 of the bypass conductive portion 5 covers the first extension portion 104 and the second extension portion 103 of the first conductive layer 1. Thereby, the conduction area between the first conductive layer 1 and the bypass conductive portion 5 can be increased, which is preferable for reducing the resistance. Since the first end edge 421 and the first outer end edge 422 are uneven, the bonding strength between the first end edge 421 and the first outer end edge 422 and the bus bar portion 51 of the bypass conductive portion 5 is increased. It is possible.
　図２１６に示したように、第１導電層１にレーザー光Ｌｚ２を照射することによって生じる第１導電層１の揮発を利用して、パッシベーション層４２を除去している。このため、パッシベーション層４２を除去するための専用のレーザー光や薬剤等は不要である。これは、製造コストの低減や制造時間の短縮に好ましい。レーザー光Ｌｚ２としてＩＲレーザー光を用いることにより、絶縁膜４２０を透過して第１導電膜１０へとレーザー光Ｌｚ２を効率よく照射することが可能である。また、レーザー光Ｌｚ２としてＩＲレーザー光を用いることにより、パッシベーション層４２の第１端縁４２１および第１外方端縁４２２を凹凸形状に仕上げることができるという利点がある。なお、絶縁膜４２０の材質の一例であるＳｉＮは、４００ｎｍより長波長の光を透過させる。このため、絶縁膜４２０がＳｉＮからなる場合、レーザー光Ｌｚ２として波長が５３２ｎｍであるＧｒｅｅｎレーザー光を用いてもよい。一方で、レーザー光Ｌｚ２として波長が３５５ｎｍであるＵＶレーザー光を用いた場合には、絶縁膜４２０と第１導電膜１０とがレーザー光Ｌｚ２を吸収するため、これらを一括して除去することができる。 As shown in FIG. 216, the passivation layer 42 is removed by utilizing volatilization of the first conductive layer 1 generated by irradiating the first conductive layer 1 with the laser light Lz2. Therefore, there is no need for a dedicated laser beam or drug for removing the passivation layer 42. This is preferable for reducing manufacturing costs and manufacturing time. By using IR laser light as the laser light Lz2, it is possible to efficiently irradiate the first conductive film 10 with the laser light Lz2 through the insulating film 420. Further, by using IR laser light as the laser light Lz2, there is an advantage that the first edge 421 and the first outer edge 422 of the passivation layer 42 can be finished in an uneven shape. Note that SiN, which is an example of the material of the insulating film 420, transmits light having a wavelength longer than 400 nm. For this reason, when the insulating film 420 is made of SiN, Green laser light having a wavelength of 532 nm may be used as the laser light Lz2. On the other hand, when UV laser light having a wavelength of 355 nm is used as the laser light Lz2, the insulating film 420 and the first conductive film 10 absorb the laser light Lz2, and therefore these can be removed at once. it can.
　絶縁膜４２０および第１導電膜１０の部分的な除去は、レーザー光Ｌｚ２を用いて行う。レーザー光Ｌｚ２は、照射する領域をより正確に制御することが可能である。したがって、絶縁膜４２０および第１導電膜１０のうち所望の箇所を除去するのに適している。 The partial removal of the insulating film 420 and the first conductive film 10 is performed using a laser beam Lz2. The laser light Lz2 can control the irradiation region more accurately. Therefore, the insulating film 420 and the first conductive film 10 are suitable for removing a desired portion.
　絶縁膜４２０の部分的な除去は、レーザー光Ｌｚ２が照射された第１導電膜１０に隣接する絶縁膜４２０が破壊される挙動を利用する。これにより、図２１９においてパッシベーション層４２から露出する第１導電層１の部分は、レーザー光Ｌｚ２が照射されていないにもかかわらず、当該部分を覆っていた絶縁膜４２０の部分が除去されている。このため、第１導電層１のうちパッシベーション層４２から露出する部分を不当に破壊することを回避しつつ、絶縁膜４２０を適切に除去することができる。 The partial removal of the insulating film 420 utilizes a behavior in which the insulating film 420 adjacent to the first conductive film 10 irradiated with the laser light Lz2 is destroyed. Thus, in FIG. 219, the portion of the first conductive layer 1 exposed from the passivation layer 42 is removed while the portion of the insulating film 420 covering the portion is not irradiated with the laser light Lz2. . For this reason, the insulating film 420 can be appropriately removed while avoiding unduly destroying the portion of the first conductive layer 1 exposed from the passivation layer 42.
　第１導電膜１０にスリット１９１およびスリット１９２を設けておくことにより、第１導電膜１０の揮発の影響を受ける絶縁膜４２０の領域が、不当に広域にわたってしまうことを回避することが可能である。また、スリット１９１およびスリット１９２を設けておくことにより、図２１８および図２１９に示した第１導電膜１０を部分的に除去する工程において、除去されるべき領域に第１導電膜１０の一部が残存したとしても、この残存部分と第１導電層１とが意図せず導通してしまうことを回避することができる。また、第１導電膜１０のうちスリット１９２を挟んで光電変換層３とは反対側に位置する部分は、除去されることなく、有機薄膜太陽電池モジュールＡ２０の一部として残存してもよい。この部分は、スリット１９２が設けられていることにより、第１導電層１と導通することが防止されている。また、この部分の除去を省略すれば、製造時間を短縮することができる。なお、スリット１９１およびスリット１９２を設ける構成は好適例であり、これらを設けない構成であってもよい。 By providing the slit 191 and the slit 192 in the first conductive film 10, it is possible to prevent the region of the insulating film 420 affected by the volatilization of the first conductive film 10 from being unduly wide. . Further, by providing the slit 191 and the slit 192, in the step of partially removing the first conductive film 10 shown in FIGS. 218 and 219, a part of the first conductive film 10 is formed in the region to be removed. Even if this remains, it can be avoided that the remaining portion and the first conductive layer 1 are unintentionally conducted. In addition, the portion of the first conductive film 10 located on the side opposite to the photoelectric conversion layer 3 across the slit 192 may remain as a part of the organic thin film solar cell module A20 without being removed. This portion is prevented from conducting to the first conductive layer 1 by providing the slit 192. Further, if the removal of this portion is omitted, the manufacturing time can be shortened. In addition, the structure which provides the slit 191 and the slit 192 is a suitable example, and the structure which does not provide these may be sufficient.
　図２１９は、有機薄膜太陽電池モジュールＡ２１の変形例を示している。本変形例においては、第１保護樹脂層４５は、非透光部４５４および透光部４５５を有する。非透光部４５４は、平面視においてバイパス導電部５と重なり、且つ第１端縁４２１よりも第１外方端縁４２２側の領域に設けられている。非透光部４５４は、非透光の材質からなり、たとえば白色の樹脂からなる。透光部４５５は、非透光部４５４に対して第１外方端縁４２２とは反対側に位置する領域を含む領域に設けられている。図示された例においては、透光部４５５は、図中右方のバスバー部５１を跨ぐようにして形成されている。また、透光部４５５は、その一部が支持基板４１に接している。本変形例によっても、バイパス導電部５を保護することができる。また、非透光部４５４を有することにより、紫外線等の光を受けることによってバイパス導電部５が劣化すること等を抑制することができる。 FIG. 219 shows a modification of the organic thin film solar cell module A21. In the present modification, the first protective resin layer 45 has a non-light-transmitting part 454 and a light-transmitting part 455. The non-light-transmissive portion 454 overlaps the bypass conductive portion 5 in a plan view and is provided in a region closer to the first outer end edge 422 than the first end edge 421. The non-translucent portion 454 is made of a non-translucent material, for example, white resin. The translucent portion 455 is provided in a region including a region located on the side opposite to the first outer end edge 422 with respect to the non-translucent portion 454. In the illustrated example, the translucent part 455 is formed so as to straddle the bus bar part 51 on the right side in the drawing. A part of the translucent portion 455 is in contact with the support substrate 41. Also according to this modification, the bypass conductive portion 5 can be protected. Moreover, by having the non-light-transmissive part 454, it can suppress that the bypass conductive part 5 deteriorates by receiving light, such as an ultraviolet-ray.
　本発明に係る有機薄膜太陽電池モジュールおよび電子機器は、上述した実施形態に限定されるものではない。本発明に係る有機薄膜太陽電池モジュールおよび電子機器の具体的な構成は、種々に設計変更自在である。 The organic thin film solar cell module and the electronic device according to the present invention are not limited to the above-described embodiments. The specific configurations of the organic thin-film solar cell module and the electronic device according to the present invention can be variously changed in design.
　本発明に係る電子機器は、携帯型電話端末をはじめ、太陽光発電を利用可能な様々な電子機器に適用することが可能であり、たとえば腕時計、電子計算機などが挙げられる。 The electronic device according to the present invention can be applied to various electronic devices that can use solar power generation, such as a portable telephone terminal, and examples thereof include a wrist watch and an electronic calculator.
　以下に、本発明の技術的特徴について付記する。 The technical features of the present invention will be described below.
　　〔付記１Ｆ〕
　透明な支持基板と、
　前記支持基板に積層された透明な第１導電層と、
　第２導電層と、
　前記第１導電層および前記第２導電層に挟まれた有機薄膜からなる光電変換層と、
　前記第２導電層を覆うパッシベーション層と、
を備え、
　前記第１導電層は、平面視において前記パッシベーション層から延出する延出部を有し、
　前記延出部の少なくとも一部を覆い、且つ前記第１導電層の材料よりも低抵抗の材料からなるバイパス導電部と、
　前記バイパス導電部を覆う保護樹脂層と、を備える、有機薄膜太陽電池モジュール。
　　〔付記２Ｆ〕
　前記パッシベーション層は、第１端縁を有し、
　前記第１端縁に隣接する領域において、前記支持基板が露出している、付記１Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記３Ｆ〕
　前記第１導電層の前記延出部は、前記第１端縁から露出する第１延出部を含み、
　前記第１延出部は、平面視において前記第１端縁から離間する第３端縁を有する、付記２Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記４Ｆ〕
　前記保護樹脂層は、前記パッシベーション層を覆う第１保護樹脂層と、当該第１保護樹脂層に積層され且つ前記バイパス導電部を覆う第２保護樹脂層と、を含み、
　前記第１保護樹脂層は、平面視において前記第１端縁と一致する第２端縁を有する、付記３Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記５Ｆ〕
　前記第１端縁と前記第２端縁とは、連続した面をなす、付記４Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記６Ｆ〕
　前記バイパス導電部は、平面視において前記第３端縁と一致する第７端縁を有する、付記５Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記７Ｆ〕
　前記第２保護樹脂層は、平面視において前記第３端縁および前記第７端縁に対して前記第１端縁とは反対側に位置する第６端縁を有し且つ前記支持基板に接している、付記６Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記８Ｆ〕
　前記第２導電層は、平面視において前記第１端縁よりも内方に退避した第４内方退避端縁を有する、付記７Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記９Ｆ〕
　前記光電変換層は、平面視において前記第１端縁よりも内方に退避した第５内方退避端縁を有する、付記８Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記１０Ｆ〕
　前記第４内方退避端縁は、平面視において前記第５内方退避端縁よりも内方に退避している、付記９Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記１１Ｆ〕
　前記パッシベーション層は、平面視において前記光電変換層の少なくとも一部を挟んで前記第１端縁と反対側に位置する第１外方端縁を有し、
　前記延出部は、前記第１外方端縁から延出する第２延出部を含み、
　前記第２延出部は、平面視において前記第１外方端縁から離間する第３外方端縁を有する、付記１０Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記１２Ｆ〕
　前記第１保護樹脂層は、平面視において前記第１外方端縁と一致する第２外方端縁を有する、付記１１Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記１３Ｆ〕
　前記第１外方端縁と前記第２外方端縁とは、連続した面をなす、付記１２Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記１４Ｆ〕
　前記バイパス導電部は、平面視において前記第３外方端縁と一致する第７外方端縁を有する、付記１３Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記１５Ｆ〕
　前記第２保護樹脂層は、平面視において前記第３外方端縁および前記第７外方端縁に対して前記第１外方端縁とは反対側に位置する第６外方端縁を有し且つ前記支持基板に接している、付記１４Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記１６Ｆ〕
　前記第２保護樹脂層は、平面視において前記バイパス導電部と重なり且つ前記第１端縁よりも前記第１外方端縁側の領域に設けられた非透光部を含む、付記１５Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記１７Ｆ〕
　前記非透光部は、白色である、付記１６Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記１８Ｆ〕
　前記バイパス導電部は、平面視において前記第３端縁に対して前記第１端縁とは反対側に位置する第７端縁を有する、付記３Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記１９Ｆ〕
　前記保護樹脂層は、平面視において前記第７端縁に対して前記第１端縁とは反対側に位置する第２端縁を有し且つ前記支持基板に接している、付記１８Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記２０Ｆ〕
　前記第２導電層は、平面視において前記第１端縁よりも内方に退避した第４内方退避端縁を有する、付記１９Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記２１Ｆ〕
　前記光電変換層は、平面視において前記第１端縁よりも内方に退避した第５内方退避端縁を有する、付記２０Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記２２Ｆ〕
　前記第４内方退避端縁は、平面視において前記第５内方退避端縁よりも内方に退避している、付記２１Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記２３Ｆ〕
　前記パッシベーション層は、平面視において前記光電変換層の少なくとも一部を挟んで前記第１端縁と反対側に位置する第１外方端縁を有し、
　前記延出部は、前記第１外方端縁から延出する第２延出部を含み、
　前記第２延出部は、平面視において前記第１外方端縁から離間する第３外方端縁を有する、付記２２Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記２４Ｆ〕
　前記バイパス導電部は、平面視において前記第３外方端縁に対して前記第１外方端縁とは反対側に位置する第７外方端縁を有する、付記２３Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記２５Ｆ〕
　前記保護樹脂層は、平面視において第７外方端縁に対して前記第１外方端縁とは反対側に位置する第２外方端縁を有し且つ前記支持基板に接している、付記２４Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記２６Ｆ〕
　前記保護樹脂層は、平面視において前記バイパス導電部と重なり且つ前記第１端縁よりも前記第１外方端縁側の領域に設けられた非透光部を含む、付記２５Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記２７Ｆ〕
　前記非透光部は、白色である、付記２６Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記２８Ｆ〕
　前記第１端縁は、平面視環状である、付記１５Ｆまたは２５Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記２９Ｆ〕
　前記第３端縁は、平面視環状である、付記２８Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記３０Ｆ〕
　前記第４内方退避端縁は、平面視環状である、付記２９Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記３１Ｆ〕
　前記第５内方退避端縁は、平面視環状である、付記３０Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記３２Ｆ〕
　前記第６端縁は、平面視環状である、付記３１Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記３３Ｆ〕
　前記第７端縁は、平面視環状である、付記３２Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記３４Ｆ〕
　前記第２端縁は、平面視環状である、付記１５Ｆに記載の有機薄膜太陽電池モジュール。
　　〔付記３５Ｆ〕
　前記第１導電層は、ＩＴＯからなる、付記１Ｆないし３４Ｆのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記３６Ｆ〕
　前記第２導電層は、金属からなる、付記１Ｆないし３５Ｆのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記３７Ｆ〕
　前記第２導電層は、Ａｌからなる、付記１Ｆないし３６Ｆのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記３８Ｆ〕
　前記パッシベーション層は、ＳｉＮからなる、付記１Ｆないし３７Ｆのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記３９Ｆ〕
　前記保護樹脂層は、紫外線硬化樹脂からなる、付記１Ｆないし３８Ｆのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記４０Ｆ〕
　付記１Ｆないし３９Ｆのいずれかに記載の有機薄膜太陽電池モジュールと、
　前記有機薄膜太陽電池モジュールからの給電によって駆動する駆動部と、
を備える、電子機器。 [Appendix 1F]
A transparent support substrate;
A transparent first conductive layer laminated on the support substrate;
A second conductive layer;
A photoelectric conversion layer comprising an organic thin film sandwiched between the first conductive layer and the second conductive layer;
A passivation layer covering the second conductive layer;
With
The first conductive layer has an extending portion extending from the passivation layer in a plan view,
A bypass conductive portion that covers at least a portion of the extension and is made of a material having a lower resistance than the material of the first conductive layer;
An organic thin-film solar cell module, comprising: a protective resin layer that covers the bypass conductive portion.
[Appendix 2F]
The passivation layer has a first edge;
The organic thin-film solar cell module according to Appendix 1F, wherein the support substrate is exposed in a region adjacent to the first edge.
[Appendix 3F]
The extension part of the first conductive layer includes a first extension part exposed from the first edge,
The said 1st extension part is an organic thin-film solar cell module of Additional remark 2F which has a 3rd edge spaced apart from the said 1st edge in planar view.
[Appendix 4F]
The protective resin layer includes a first protective resin layer that covers the passivation layer, and a second protective resin layer that is laminated on the first protective resin layer and covers the bypass conductive portion,
The said 1st protective resin layer is an organic thin-film solar cell module of Additional remark 3F which has a 2nd edge corresponding to the said 1st edge in planar view.
[Appendix 5F]
The organic thin film solar cell module according to appendix 4F, wherein the first end edge and the second end edge form a continuous surface.
[Appendix 6F]
The bypass conductive part is the organic thin-film solar cell module according to appendix 5F, having a seventh edge that coincides with the third edge in plan view.
[Appendix 7F]
The second protective resin layer has a sixth edge located on a side opposite to the first edge with respect to the third edge and the seventh edge in a plan view, and is in contact with the support substrate. The organic thin-film solar cell module according to Appendix 6F.
[Appendix 8F]
The organic thin film solar cell module according to appendix 7F, wherein the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
[Appendix 9F]
The organic thin-film solar cell module according to appendix 8F, wherein the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
[Appendix 10F]
The organic thin-film solar cell module according to appendix 9F, wherein the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
[Appendix 11F]
The passivation layer has a first outer end edge located on the opposite side of the first end edge across at least a part of the photoelectric conversion layer in plan view,
The extension includes a second extension extending from the first outer end edge,
The said 2nd extension part is an organic thin-film solar cell module of Additional remark 10F which has a 3rd outer end edge spaced apart from a said 1st outer end edge in planar view.
[Appendix 12F]
The organic thin film solar cell module according to appendix 11F, wherein the first protective resin layer has a second outer end edge that coincides with the first outer end edge in a plan view.
[Appendix 13F]
The organic thin-film solar cell module according to Appendix 12F, wherein the first outer end edge and the second outer end edge form a continuous surface.
[Appendix 14F]
The bypass thin film solar cell module according to appendix 13F, wherein the bypass conductive portion has a seventh outer end edge that coincides with the third outer end edge in a plan view.
[Appendix 15F]
The second protective resin layer has a sixth outer edge located on a side opposite to the first outer edge with respect to the third outer edge and the seventh outer edge in plan view. The organic thin-film solar cell module according to appendix 14F, which is in contact with the support substrate.
[Appendix 16F]
The second protective resin layer includes a non-light-transmitting portion that overlaps with the bypass conductive portion in a plan view and is provided in a region closer to the first outer end edge than the first end edge. Organic thin-film solar cell module.
[Appendix 17F]
The non-light-transmitting portion is an organic thin-film solar cell module according to appendix 16F, which is white.
[Appendix 18F]
The bypass conductive part is the organic thin-film solar cell module according to appendix 3F, having a seventh edge located on a side opposite to the first edge with respect to the third edge in plan view.
[Appendix 19F]
The protective resin layer according to appendix 18F, wherein the protective resin layer has a second edge located on a side opposite to the first edge with respect to the seventh edge in plan view, and is in contact with the support substrate. Organic thin-film solar cell module.
[Appendix 20F]
The organic thin-film solar cell module according to appendix 19F, wherein the second conductive layer has a fourth inward retracting edge that is retracted inward from the first end edge in plan view.
[Appendix 21F]
The organic thin-film solar cell module according to appendix 20F, wherein the photoelectric conversion layer has a fifth inward retracting edge that is retracted inward from the first end edge in plan view.
[Appendix 22F]
The organic thin-film solar cell module according to appendix 21F, wherein the fourth inward retracting edge is retracted inward from the fifth inward retracting edge in plan view.
[Appendix 23F]
The passivation layer has a first outer end edge located on the opposite side of the first end edge across at least a part of the photoelectric conversion layer in plan view,
The extension includes a second extension extending from the first outer end edge,
The said 2nd extension part is an organic thin-film solar cell module of Additional remark 22F which has a 3rd outer end edge spaced apart from a said 1st outer end edge in planar view.
[Appendix 24F]
The organic thin-film sun according to appendix 23F, wherein the bypass conductive portion has a seventh outer end edge located on a side opposite to the first outer end edge with respect to the third outer end edge in plan view. Battery module.
[Appendix 25F]
The protective resin layer has a second outer end edge located on a side opposite to the first outer end edge with respect to the seventh outer end edge in a plan view, and is in contact with the support substrate. The organic thin-film solar cell module according to Appendix 24F.
[Appendix 26F]
The organic thin film according to appendix 25F, wherein the protective resin layer includes a non-light-transmitting portion that overlaps the bypass conductive portion in a plan view and is provided in a region closer to the first outer end edge than the first end edge. Solar cell module.
[Appendix 27F]
The non-light-transmitting portion is an organic thin-film solar cell module according to appendix 26F, which is white.
[Appendix 28F]
The organic thin film solar cell module according to Supplementary Note 15F or 25F, wherein the first end edge is annular in plan view.
[Appendix 29F]
The organic thin film solar cell module according to appendix 28F, wherein the third end edge is annular in plan view.
[Appendix 30F]
The organic thin-film solar cell module according to appendix 29F, wherein the fourth inward withdrawal edge is annular in plan view.
[Appendix 31F]
The organic thin film solar cell module according to Supplementary Note 30F, wherein the fifth inward retracting edge is annular in plan view.
[Appendix 32F]
The organic thin-film solar cell module according to Supplementary Note 31F, wherein the sixth end edge is annular in plan view.
[Appendix 33F]
The organic thin film solar cell module according to Supplementary Note 32F, wherein the seventh end edge is annular in plan view.
[Appendix 34F]
The organic thin film solar cell module according to Supplementary Note 15F, wherein the second end edge is annular in plan view.
[Appendix 35F]
The organic thin film solar cell module according to any one of Supplementary Notes 1F to 34F, wherein the first conductive layer is made of ITO.
[Appendix 36F]
The organic thin-film solar cell module according to any one of Supplementary Notes 1F to 35F, wherein the second conductive layer is made of metal.
[Appendix 37F]
The organic thin-film solar cell module according to any one of Supplementary Notes 1F to 36F, wherein the second conductive layer is made of Al.
[Appendix 38F]
The organic thin-film solar cell module according to any one of Supplementary Notes 1F to 37F, wherein the passivation layer is made of SiN.
[Appendix 39F]
The organic thin-film solar cell module according to any one of Supplementary Notes 1F to 38F, wherein the protective resin layer is made of an ultraviolet curable resin.
[Appendix 40F]
An organic thin-film solar cell module according to any one of Supplementary Notes 1F to 39F;
A drive unit driven by feeding from the organic thin film solar cell module;
An electronic device.
［第２２－第２７実施形態］ [Twenty-second to twenty-seventh embodiments]
　本発明において、「透明」とは、透過率が約５０％以上であるものと定義する。また「透明」とは、可視光線に対して、無色透明という意味でも使用する。可視光線は波長約３６０ｎｍ～８３０ｎｍ程度、エネルギー約３．４５ｅＶ～１．４９ｅＶ程度に相当し、この領域で透過率が５０％以上あれば透明である。 In the present invention, “transparent” is defined as having a transmittance of about 50% or more. “Transparent” is also used to mean colorless and transparent to visible light. Visible light corresponds to a wavelength of about 360 nm to 830 nm and an energy of about 3.45 eV to 1.49 eV, and is transparent if the transmittance is 50% or more in this region.
　図２２０～図２２６は、本発明の第２２実施形態に基づく有機薄膜太陽電池モジュール示している。図２２７は、本発明の第２２実施形態に基づく電子機器を示している。 220 to 226 show an organic thin film solar cell module according to a twenty-second embodiment of the present invention. FIG. 227 shows an electronic apparatus according to the twenty-second embodiment of the present invention.
　図２２０は、有機薄膜太陽電池モジュールＡ２２を示す要部平面図である。図２２１は、図２２０のＣＣＸＸＩ－ＣＣＸＸＩ線に沿う断面図である。図２２２は、有機薄膜太陽電池モジュールＡ２２を示す要部拡大平面図である。図２２３は、図２２２のＣＣＸＸＩＩＩ－ＣＣＸＸＩＩＩ線に沿う要部拡大断面図である。図２２４は、図２２２のＣＣＸＸＩＶ－ＣＣＸＸＩＶ線に沿う要部拡大断面図である。図２２５は、有機薄膜太陽電池モジュールＡ２２を示す要部拡大平面図である。図２２６は、図２２５のＣＣＸＸＶＩ－ＣＣＸＸＶＩ線に沿う要部拡大断面図である。図２２７は、有機薄膜太陽電池モジュールＡ２２および電子機器Ｂ２２を示すシステム構成図である。なお、以降の説明において、「ｚ方向視」は、平面視を意味し、「ｚ方向」は支持基板４１等の厚さ方向を意味する。 FIG. 220 is a plan view of an essential part showing the organic thin film solar cell module A22. FIG. 221 is a sectional view taken along line CCXXI-CCXXI in FIG. FIG. 222 is an enlarged plan view of a main part showing the organic thin film solar cell module A22. FIG. 223 is an enlarged cross-sectional view of a main part along the line CCXXIII-CCXXIII in FIG. 222. FIG. 224 is an enlarged cross-sectional view of a main part along the line CCXXIV-CCXXIV in FIG. 222. FIG. 225 is a main part enlarged plan view showing the organic thin film solar cell module A22. 226 is an enlarged cross-sectional view of a main part taken along the line CCXXVI-CCXXVI of FIG. FIG. 227 is a system configuration diagram showing the organic thin-film solar cell module A22 and the electronic device B22. In the following description, “view in the z direction” means a plan view, and “z direction” means a thickness direction of the support substrate 41 and the like.
　図２２７に示すように、電子機器Ｂ２２は、有機薄膜太陽電池モジュールＡ２２および駆動部７１を備える。有機薄膜太陽電池モジュールＡ２５は、電子機器Ｂ２２における電源モジュールであり、太陽光などの光を電力に変換する。 As shown in FIG. 227, the electronic device B22 includes an organic thin-film solar cell module A22 and a drive unit 71. The organic thin film solar cell module A25 is a power supply module in the electronic device B22, and converts light such as sunlight into electric power.
　駆動部７１は、有機薄膜太陽電池モジュールＡ２２からの給電によって駆動するものである。駆動部７１の具体的な構成や機能は特に限定されず、電子機器Ｂ２２の機能を実現しうる様々な構成が採用され得る。駆動部７１の一例を挙げると、電子計算機器としての電子機器Ｂ２２を実現する電子計算処理部、無線通信モジュールとしての電子機器Ｂ２２を実現する無線通信部、腕時計としての電子機器Ｂ２２を実現しうる計時処理部、携帯型電子端末機器としての電子機器Ｂ２２を実現しうる入出力演算処理部、等が挙げられる。 The driving unit 71 is driven by power feeding from the organic thin film solar cell module A22. The specific configuration and function of the drive unit 71 are not particularly limited, and various configurations that can realize the function of the electronic device B22 can be adopted. As an example of the drive unit 71, an electronic calculation processing unit that realizes an electronic device B22 as an electronic calculation device, a wireless communication unit that realizes an electronic device B22 as a wireless communication module, and an electronic device B22 as a wristwatch can be realized. Examples thereof include a timekeeping processing unit, an input / output arithmetic processing unit capable of realizing the electronic device B22 as a portable electronic terminal device, and the like.
　有機薄膜太陽電池モジュールＡ２２は、支持基板４１、第１導電層１、第２導電層２、光電変換層３およびパッシベーション層４２を備える。本実施形態においては、有機薄膜太陽電池モジュールＡ２２は、ｚ方向視矩形状とされているが、これは有機薄膜太陽電池モジュールＡ２２の形状の一例であり、様々な形状に設定されうる。図２２０、図２２２および図２２５においては、理解の便宜上、パッシベーション層４２を省略している。 The organic thin-film solar cell module A22 includes a support substrate 41, a first conductive layer 1, a second conductive layer 2, a photoelectric conversion layer 3, and a passivation layer. In the present embodiment, the organic thin film solar cell module A22 has a rectangular shape as viewed in the z direction, but this is an example of the shape of the organic thin film solar cell module A22, and can be set in various shapes. 220, 222, and 225, the passivation layer 42 is omitted for convenience of understanding.
　支持基板４１は、有機薄膜太陽電池モジュールＡ２２の土台となるものである。支持基板４１は、たとえば透明なガラスあるいは樹脂等から適宜選択される材質からなる、単層もしくは複数層を有する。支持基板４１の厚さは、たとえば０．０５ｍｍ～２．０ｍｍである。支持基板４１の形状や大きさは特に限定されず、本実施形態においては、ｚ方向視矩形状とされている。 The support substrate 41 is a base of the organic thin film solar cell module A22. The support substrate 41 has a single layer or a plurality of layers made of a material appropriately selected from, for example, transparent glass or resin. The thickness of the support substrate 41 is, for example, 0.05 mm to 2.0 mm. The shape and size of the support substrate 41 are not particularly limited, and in the present embodiment, the support substrate 41 has a rectangular shape as viewed in the z direction.
　有機薄膜太陽電池モジュールＡ２２には、図２２０および図２２２に示すように、複数の基板露出領域４１０および基板露出領域４１２が形成され、図２２０に示すように基板露出領域４１１が形成されている。複数の基板露出領域４１０、基板露出領域４１１および基板露出領域４１２は、支持基板４１のうち第１導電層１から露出した領域である。 In the organic thin-film solar cell module A22, as shown in FIGS. 220 and 222, a plurality of substrate exposed regions 410 and substrate exposed regions 412 are formed, and a substrate exposed region 411 is formed as shown in FIG. The plurality of substrate exposed regions 410, substrate exposed regions 411, and substrate exposed regions 412 are regions exposed from the first conductive layer 1 in the support substrate 41.
　第１導電層１は、支持基板４１上に形成されている。第１導電層１は、透明であり、本実施形態においてはＩＴＯからなる。第１導電層１は、複数の第１区画部１１および第３区画部１５を有する。第１導電層１の形状は、様々な形状に設定されうる。第１導電層１の厚さは、たとえば１００ｎｍ～３００ｎｍである。 The first conductive layer 1 is formed on the support substrate 41. The first conductive layer 1 is transparent and is made of ITO in this embodiment. The first conductive layer 1 has a plurality of first partition portions 11 and third partition portions 15. The shape of the first conductive layer 1 can be set to various shapes. The thickness of the first conductive layer 1 is, for example, 100 nm to 300 nm.
　複数の第１区画部１１は、基板露出領域４１０を介して隣り合っている。本実施形態においては、４つの第１区画部１１が３つの基板露出領域４１０を介して隣り合っている。また、４つの第１区画部１１は、ｘ方向に沿って一直線上に配列されている。なお、以下においては、４つの第１区画部１１を、理解の便宜上、第１区画部１１－１、第１区画部１１－２、第１区画部１１－３および第１区画部１１－４と必要に応じて区別して説明する。 The plurality of first partition portions 11 are adjacent to each other through the substrate exposed region 410. In the present embodiment, the four first partition portions 11 are adjacent to each other through the three substrate exposed regions 410. Moreover, the four 1st division parts 11 are arranged on the straight line along the x direction. In the following description, for convenience of understanding, the four first partition portions 11 are divided into a first partition portion 11-1, a first partition portion 11-2, a first partition portion 11-3, and a first partition portion 11-4. And will be described separately as necessary.
　第１区画部１１は、第１区画部第１端縁１１０、第１区画部第２端縁１２０および２つの第１区画部第３端縁１３０を有する。 The first partition part 11 has a first partition part first edge 110, a first partition part second edge 120, and two first partition part third edges 130.
　第１区画部第１端縁１１０は、基板露出領域４１０の一部を区画する端縁である。第１区画部第２端縁１２０は、基板露出領域４１０の一部を区画する端縁である。すなわち、基板露出領域４１０は、一方の第１区画部１１（図中ｘ方向右側、図２２２における第１区画部１１－２）の第１区画部第１端縁１１０と他方の第１区画部１１（図中ｘ方向左側、図２２２における第１区画部１１－３）の第１区画部第２端縁１２０とによって既定されている。 The first partition 110 first edge 110 is an edge that partitions a part of the substrate exposed region 410. The first partition portion second edge 120 is an edge that partitions a part of the substrate exposed region 410. That is, the substrate exposed region 410 includes the first partition portion first edge 110 and the other first partition portion of one of the first partition portions 11 (right side in the x direction in the drawing, first partition portion 11-2 in FIG. 222). 11 (the left side in the x direction in the drawing, the first partition portion 11-3 in FIG. 222) and the second edge 120 of the first partition portion.
　本実施形態においては、第１区画部１１－１～３の第１区画部第１端縁１１０は、第１辺１１１を有し、第１区画部１１－２～４の第１区画部第２端縁１２０は、第２辺１２１を有する。同一の基板露出領域４１０を区画する第１辺１１１（図２２２における第１区画部１１－２の第１辺１１１）と第２辺１２１（図２２２における第１区画部１１－３の第２辺１２１）とは、互いに平行である。また、本実施形態においては、第１辺１１１と第２辺１２１とは、いずれもｙ方向に沿う直線状である。これに対応して、本実施形態においては、基板露出領域４１０のうち第１辺１１１および第２辺１２１に規定されている部分は、ｙ方向に沿う直線状である。 In the present embodiment, the first partition portion first edge 110 of the first partition portions 11-1 to 11-3 has the first side 111, and the first partition portion 11-2 to the first partition portion 11-2 to the first partition portion 11-4. The two end edges 120 have a second side 121. The first side 111 (the first side 111 of the first partition unit 11-2 in FIG. 222) and the second side 121 (the second side of the first partition unit 11-3 in FIG. 222) that partition the same substrate exposed region 410 121) are parallel to each other. In the present embodiment, the first side 111 and the second side 121 are both linear along the y direction. Correspondingly, in the present embodiment, portions of the substrate exposure region 410 that are defined by the first side 111 and the second side 121 are linear along the y direction.
　２つの第１区画部第３端縁１３０は、第１区画部第１端縁１１０の両端と第１区画部第２端縁１２０の両端とをそれぞれ繋いでいる。本実施形態においては、第１区画部第３端縁１３０は、ｘ方向に沿う直線状である。第１区画部第３端縁１３０は、基板露出領域４１２の一部を規定している。本実施形態の１１は、第１区画部第１端縁１１０の第１辺１１１、第１区画部第２端縁１２０の第２辺１２１および２つの第１区画部第３端縁１３０によって構成されたｘ方向視略矩形状とされている。 The two first partition portion third end edges 130 connect both ends of the first partition portion first end edge 110 and both ends of the first partition portion second end edge 120, respectively. In the present embodiment, the first partition portion third edge 130 is linear along the x direction. The first partition portion third edge 130 defines a part of the substrate exposed region 412. 11 of this embodiment is constituted by the first side 111 of the first partition part first edge 110, the second side 121 of the first partition part second edge 120, and the two first partition part third edges 130. It is made into the substantially rectangular shape by the x direction view made.
　図２２０および図２２５に示すように、図中ｘ方向において最も右側に位置する第１区画部１１－１と第３区画部１５とは、基板露出領域４１１を介して隣り合っている。第３区画部１５は、第３区画部端縁１６０を有する。第３区画部１５の第３区画部端縁１６０と第３区画部１５に隣り合う第１区画部１１－１の第１区画部第２端縁１２０とによって、基板露出領域４１１が規定されている。第３区画部端縁１６０は、第３区画部平行部１６１を有する。第３区画部平行部１６１は、第１区画部１１－１の第２辺１２１と平行な部分である。本実施形態においては、第３区画部平行部１６１は、ｙ方向に沿う直線状である。 As shown in FIGS. 220 and 225, the first partition part 11-1 and the third partition part 15 located on the rightmost side in the x direction in the drawing are adjacent to each other with the substrate exposed region 411 interposed therebetween. The third partition part 15 has a third partition part edge 160. The substrate exposed region 411 is defined by the third partition portion edge 160 of the third partition portion 15 and the first partition portion second edge 120 of the first partition portion 11-1 adjacent to the third partition portion 15. Yes. The third partition part edge 160 has a third partition part parallel part 161. The third partition parallel part 161 is a part parallel to the second side 121 of the first partition 11-1. In this embodiment, the 3rd division part parallel part 161 is linear form along ay direction.
　光電変換層３は、支持基板４１および第１導電層１上に積層されており、第１導電層１と第２導電層２とに挟まれている。光電変換層３は、有機薄膜からなる層であり、受けた光を電力に変換する光電変換機能を発揮する。光電変換層３の具体的構成は特に限定されないが、その一例を挙げると、バルクヘテロ接合有機活性層と、このバルクヘテロ接合有機活性層に対して第１導電層１側に積層された正孔輸送層とからなる。本実施形態においては、光電変換層３は、平面視円形状とされているが、これは一例であり、光電変換層３は、様々な形状とされうる。光電変換層３の厚さは、たとえば５０ｎｍ～３００ｎｍである。 The photoelectric conversion layer 3 is laminated on the support substrate 41 and the first conductive layer 1, and is sandwiched between the first conductive layer 1 and the second conductive layer 2. The photoelectric conversion layer 3 is a layer made of an organic thin film, and exhibits a photoelectric conversion function for converting received light into electric power. The specific configuration of the photoelectric conversion layer 3 is not particularly limited. For example, a bulk heterojunction organic active layer and a hole transport layer stacked on the first conductive layer 1 side with respect to the bulk heterojunction organic active layer are given. It consists of. In the present embodiment, the photoelectric conversion layer 3 has a circular shape in plan view, but this is an example, and the photoelectric conversion layer 3 can have various shapes. The thickness of the photoelectric conversion layer 3 is, for example, 50 nm to 300 nm.
　バルクヘテロ接合有機活性層は、ｐ型有機活性層領域とｎ型有機活性層領域が混在し、複雑なバルクへテロｐｎ接合を形成している。ｐ型有機活性層領域は、例えば、Ｐ３ＨＴ（poly(3-hexylthiophene-2,5diyl)）で形成され、ｎ型有機活性層領域は、例えば、ＰＣＢＭ（6,6-phenyl-C61-butyric acid methyl ester）で形成されている。正孔輸送層は、たとえばＰＥＤＯＴ：ＰＳＳで形成されている。 In the bulk heterojunction organic active layer, a p-type organic active layer region and an n-type organic active layer region are mixed to form a complex bulk hetero pn junction. The p-type organic active layer region is formed of, for example, P3HT (poly (3-hexylthiophene-2,5diyl)), and the n-type organic active layer region is, for example, PCBM (6,6-phenyl-C61-butyric acid methyl). ester). The hole transport layer is made of, for example, PEDOT: PSS.
　光電変換層３の形成に用いられる材質を例示すると、フタロシアニン（Ｐｃ:Phthalocyanine）、亜鉛フタロシアニン（ＺｎＰｃ:Zinc- phthalocyanine）、Ｍｅ－Ｐｔｃｄｉ（N,N’-dimethyl perylene-3,4,9,10-dicarboximide）、フラーレン（C 60 :Buckminster fullerene）が挙げられる。これらの材質は、たとえば真空蒸着に使用される。 Examples of materials used to form the photoelectric conversion layer 3 include phthalocyanine (Pc: Phthhalocyanine), zinc phthalocyanine (ZnPc: Zinc- phthalocyanine), Me-Ptcdi (N, N'-dimethyl perylene-3,4,9,10). -dicarboximide) and fullerene (C 60: Buckminster fullerene). These materials are used for vacuum deposition, for example.
　また、光電変換層３の形成に用いられる他の材質を例示すると、ＭＤＭＯ－ＰＰＶ（poly[2-methoxy-5-(3,7-dimethyl octyloxy)]-1,4-phenylene vinylene）、ＰＣＤＴＢＴ（poly[N-9’-hepta-decanyl-2,7-carbazole-alt-5,5-(4’,7’-di-thienyl-2’1’,3’-b3nzothiadizaole)]）、ＰＣ６０ＢＭ（6,6-phenyl-C61-butyric acid methyl ester）、ＰＣ７０ＢＭ（6,6-phenyl-C71-butyric acid methyl ester）が挙げられる。これらの材質は、たとえば溶液プロセスに使用される。 Other materials used for forming the photoelectric conversion layer 3 are exemplified by MDMO-PPV (poly [2-methoxy-5- (3,7-dimethyl-octyloxy)]-1,4-phenylene-vinylene), PCDTBT ( poly [N-9'-hepta-decanyl-2,7-carbazole-alt-5,5- (4 ', 7'-di-thienyl-2'1', 3'-b3nzothiadizaole)]), PC60BM (6 , 6-phenyl-C61-butyric acid methyl ester) and PC70BM (6,6-phenyl-C71-butyric acid methyl ester). These materials are used, for example, in solution processes.
　第２導電層２は、その大部分が光電変換層３を介して第１導電層１上に積層されている。また、第２導電層２の一部は、第１導電層１に直接接している。第２導電層２の材質は特に限定されず、透明であっても不透明であってもよいが、本実施形態においては、第２導電層２は、Ａｌ、Ｗ、Ｍｏ、Ｍｎ、Ｍｇに代表される金属からなる。以下においては、第２導電層２がＡｌからなる場合を例に説明する。したがって、第２導電層２は、不透明である。またこの場合、第２導電層２の支持基板４１とは反対側の表面に、Ａｌ２Ｏ３からなる不動態皮膜（図示略）が形成されてもよい。第２導電層２の厚さは、たとえば３０ｎｍ～１５０ｎｍである。 Most of the second conductive layer 2 is laminated on the first conductive layer 1 via the photoelectric conversion layer 3. A part of the second conductive layer 2 is in direct contact with the first conductive layer 1. The material of the second conductive layer 2 is not particularly limited and may be transparent or opaque, but in the present embodiment, the second conductive layer 2 is represented by Al, W, Mo, Mn, and Mg. Made of metal. Hereinafter, a case where the second conductive layer 2 is made of Al will be described as an example. Therefore, the second conductive layer 2 is opaque. In this case, a passive film (not shown) made of Al 2 O 3 may be formed on the surface of the second conductive layer 2 opposite to the support substrate 41. The thickness of the second conductive layer 2 is, for example, 30 nm to 150 nm.
　図２２０に示すように、第２導電層２は、複数の第２区画部２１を有する。複数の第２区画部２１は、基板露出領域４１０の一部ずつを挟んで隣り合っている。本実施形態の場合、より具体的には、隣り合う第２区画部２１は、第１区画部第１端縁１１０の第１辺１１１と第１区画部第２端縁１２０の第２辺１２１とを間に挟んで隣り合っている。本実施形態においては、４つの第２区画部２１が３つの基板露出領域４１０の一部ずつを挟んで隣り合っている。また、４つの第２区画部２１は、ｘ方向に沿って一直線上に配列されている。なお、以下においては、４つの第２区画部２１を、理解の便宜上、第２区画部２１－１、第２区画部２１－２、第２区画部２１－３および第２区画部２１－４と必要に応じて区別して説明する。 As shown in FIG. 220, the second conductive layer 2 has a plurality of second partition portions 21. The plurality of second partition portions 21 are adjacent to each other with a part of the substrate exposed region 410 interposed therebetween. In the case of the present embodiment, more specifically, the adjacent second partition parts 21 include the first side 111 of the first partition part first edge 110 and the second side 121 of the first partition part second edge 120. Next to each other. In the present embodiment, the four second partition portions 21 are adjacent to each other with a part of each of the three substrate exposed regions 410 interposed therebetween. Further, the four second partition portions 21 are arranged on a straight line along the x direction. In the following, for convenience of understanding, the four second partition sections 21 are divided into a second partition section 21-1, a second partition section 21-2, a second partition section 21-3, and a second partition section 21-4. And will be described separately as necessary.
　図２２０および図２２２に示すように、第２区画部２１は、ｚ方向視において第１区画部１１と重なっている。第２区画部２１は、第２区画部第１端縁２１０、第２区画部第２端縁２２０および２つの第２区画部第３端縁２３０を有する。 220 and 222, the second partition portion 21 overlaps the first partition portion 11 when viewed in the z direction. The second partition part 21 has a second partition part first edge 210, a second partition part second edge 220, and two second partition part third edges 230.
　第２区画部２１－１～３（図２２２における第２区画部２１－２）の第２区画部第１端縁２１０は、基板露出領域４１０を規定する第１区画部１１－１～３（図２２２における１１－２）の第１区画部第１端縁１１０に対して当該基板露出領域４１０を規定する第１区画部１１－２～４（図２２２における第１区画部１１－３）の第１区画部第２端縁１２０とは反対側に位置する。第２区画部第２端縁２２０は、ｚ方向視において基板露出領域４１０の一部を挟んで隣り合う第２区画部２１の第２区画部第１端縁２１０と対向している。 The second partition portion first edge 210 of the second partition portions 21-1 to 21-3 (second partition portion 21-2 in FIG. 222) is the first partition portions 11-1 to 11-3 (which define the substrate exposed region 410). The first partition portions 11-2 to 11-4 (first partition portion 11-3 in FIG. 222) defining the substrate exposed region 410 with respect to the first edge 110 of the first partition portion 11-2) in FIG. 222. It is located on the opposite side to the first partition portion second end edge 120. The second partition portion second edge 220 is opposed to the second partition portion first edge 210 of the second partition portion 21 adjacent to each other with a part of the substrate exposed region 410 interposed therebetween in the z direction.
　本実施形態においては、第２区画部第１端縁２１０（図２２２における第２区画部２１－２の第２区画部第１端縁２１０）と第２区画部第２端縁２２０（図２２２における第２区画部２１－３の第２区画部第２端縁２２０）とは、互いに平行である。また、第２区画部第１端縁２１０および第２区画部第２端縁２２０は、ｙ方向に沿う直線状である。すなわち、本実施形態においては、第１辺１１１、第２辺１２１、第２区画部第１端縁２１０および第２区画部第２端縁２２０が、互いに平行であり、ｙ方向に沿う直線状である。 In the present embodiment, the second partition portion first edge 210 (the second partition portion first edge 210 of the second partition portion 21-2 in FIG. 222) and the second partition portion second edge 220 (FIG. 222). And the second partition part second end edge 220) of the second partition part 21-3 are parallel to each other. Moreover, the 2nd division part 1st edge 210 and the 2nd division part 2nd edge 220 are linear form along ay direction. That is, in the present embodiment, the first side 111, the second side 121, the second partition part first edge 210, and the second partition part second edge 220 are parallel to each other, and are linear along the y direction. It is.
　２つの第２区画部第３端縁２３０は、第２区画部第１端縁２１０の両端と第２区画部第２端縁２２０の両端とをそれぞれ繋いでいる。２つの第２区画部第３端縁２３０は、互いに平行であり、ｘ方向に沿う直線状である。これらの第２区画部第１端縁２１０、第２区画部第２端縁２２０および２つの第２区画部第３端縁２３０を有する第２区画部２１は、ｚ方向視矩形状である。 The two second partition part third end edges 230 connect both ends of the second partition part first end edge 210 and both ends of the second partition part second end edge 220, respectively. The two second partition portion third end edges 230 are parallel to each other and are linear along the x direction. The second partition portion 21 having the second partition portion first end edge 210, the second partition portion second end edge 220, and the two second partition portion third end edges 230 has a rectangular shape as viewed in the z direction.
　図２２１、図２２３、図２２４および図２２６に示すように、パッシベーション層４２は、第２導電層２上に積層されており、第２導電層２および光電変換層３を覆っている。パッシベーション層４２は、たとえばＳｉＮまたはＳｉＯＮからなる。パッシベーション層４２の厚さは、たとえば０．５μｍ～２．０μｍであり、本実施形態においては、たとえば１．５μｍ程度とされる。パッシベーション層４２が光電変換層３を覆っていることにより、光電変換層３に外部から水やパーティクル等が進入することを防止できる。また、パッシベーション層４２は、光電変換層３よりも厚く構成されていることにより、有機薄膜太陽電池モジュールＡ２２の強度を向上させることができる。なお、上述のような平坦なパッシベーション層４２は、例えばパッシベーション層４２が光電変換層３に対して厚い層とすること、また後述するＣＶＤを用いた手法によって形成されることにより形成することができ、これに限られない。また、パッシベーション層４２上に、さらに他の層が積層された構成であってもよい。たとえば、電子機器Ｂ２２の他の構成要素と有機薄膜太陽電池モジュールＡ２２とを接合するための接合層が設けられていてもよい。あるいは、パッシベーション層４２を保護する保護層が設けられていてもよい。 221, 223, 224, and 226, the passivation layer 42 is stacked on the second conductive layer 2 and covers the second conductive layer 2 and the photoelectric conversion layer 3. The passivation layer 42 is made of, for example, SiN or SiON. The thickness of the passivation layer 42 is, for example, 0.5 μm to 2.0 μm. In the present embodiment, the thickness is, for example, about 1.5 μm. Since the passivation layer 42 covers the photoelectric conversion layer 3, it is possible to prevent water, particles, and the like from entering the photoelectric conversion layer 3 from the outside. Moreover, the passivation layer 42 can improve the intensity | strength of organic thin-film solar cell module A22 by being comprised thicker than the photoelectric converting layer 3. FIG. The flat passivation layer 42 as described above can be formed, for example, by making the passivation layer 42 thick with respect to the photoelectric conversion layer 3 or by a method using CVD described later. Not limited to this. In addition, another layer may be stacked on the passivation layer 42. For example, a bonding layer for bonding another component of the electronic device B22 and the organic thin film solar cell module A22 may be provided. Alternatively, a protective layer that protects the passivation layer 42 may be provided.
　図２２２～図２２４に示すように、第１区画部１１－１～３（図２２２における第１区画部１１－２）の第１区画部第１端縁１１０は、第１辺１１１に加えて２つの第１被覆部１１２を有する。第１被覆部１１２は、第１区画部第１端縁１１０のうちｚ方向視において第２区画部２１と重なっており、ｚ方向視において第２区画部２１に被覆されている部分である。本実施形態においては、２つの第１被覆部１１２が、それぞれ第１辺１１１のｙ方向両端部に接続されて設けられている。第１被覆部１１２の形状は特に限定されず、本実施形態においては、第１被覆部１１２は、第１辺１１１に対してｘ方向に突出する形状とされており、第１辺１１２１、第２辺１１２２および第３辺１１２３を有する。第１辺１１２１は、第１区画部第３端縁１３０と平行でありｘ方向に沿う辺である。第２辺１１２２は、第１辺１１２１と交差する方向に沿う辺であり、ｙ方向に沿っている。第３辺１１２３は、第１辺１１２１と第２辺１１２２とを繋ぐ辺であり、図示された例においては、湾曲形状とされている。また、図示された第１被覆部１１２は、一端が第２区画部第２端縁２２０に到達し、他端が第２区画部第３端縁２３０にｚ方向視において交差している。 As shown in FIGS. 222 to 224, the first partition portion first edge 110 of the first partition portions 11-1 to 11-3 (the first partition portion 11-2 in FIG. 222) is added to the first side 111. Two first covering portions 112 are provided. The first covering portion 112 is a portion of the first partition portion first edge 110 that overlaps the second partition portion 21 when viewed in the z direction and is covered with the second partition portion 21 when viewed in the z direction. In the present embodiment, two first covering portions 112 are provided connected to both ends of the first side 111 in the y direction. The shape of the first covering portion 112 is not particularly limited. In the present embodiment, the first covering portion 112 has a shape protruding in the x direction with respect to the first side 111, and the first side 1121, It has two sides 1122 and a third side 1123. The first side 1121 is a side that is parallel to the first partition portion third edge 130 and extends in the x direction. The second side 1122 is a side along the direction intersecting the first side 1121 and is along the y direction. The third side 1123 is a side that connects the first side 1121 and the second side 1122 and has a curved shape in the illustrated example. The illustrated first covering portion 112 has one end reaching the second partition portion second end edge 220 and the other end intersecting the second partition portion third end edge 230 in the z-direction view.
　図２２２～図２２４に示すように、第１区画部１１－２～４（図２２２における第１区画部１１－３）の第１区画部第２端縁１２０は、第２辺１２１に加えて２つの第２被覆部１２２を有する。第２被覆部１２２は、第１区画部第２端縁１２０のうちｚ方向視において第２区画部２１と重なる部分である。本実施形態においては、２つの第２被覆部１２２が、第２辺１２１のｙ方向両端部に接続されて設けられている。第２被覆部１２２の形状は特に限定されず、本実施形態においては、第２被覆部１２２は、第２辺１２１に対してｘ方向に凹んだ形状とされており、第１辺１２２１、第２辺１２２２および第３辺１２２３を有する。第１辺１２２１は、第１区画部第３端縁１３０と平行でありｘ方向に沿う辺である。第２辺１２２２は、第１辺１２２１と交差する方向に沿う辺であり、ｙ方向に沿っている。第３辺１２２３は、第１辺１２２１と第２辺１２２２とを繋ぐ辺であり、図示された例においては、湾曲形状とされている。また、図示された第２被覆部１２２は、一端が第２区画部第２端縁２２０に到達し、他端が第２区画部第３端縁２３０に到達している。 As shown in FIGS. 222 to 224, the first partition portion second edge 120 of the first partition portions 11-2 to 11-4 (the first partition portion 11-3 in FIG. 222) is added to the second side 121. Two second covering portions 122 are provided. The 2nd coating | coated part 122 is a part which overlaps with the 2nd division part 21 in z direction view among the 1st division part 2nd edges 120. As shown in FIG. In the present embodiment, two second covering portions 122 are provided connected to both ends of the second side 121 in the y direction. The shape of the second covering portion 122 is not particularly limited, and in the present embodiment, the second covering portion 122 has a shape that is recessed in the x direction with respect to the second side 121. It has two sides 1222 and a third side 1223. The first side 1221 is a side parallel to the first partition portion third end edge 130 and along the x direction. The second side 1222 is a side along the direction intersecting the first side 1221 and is along the y direction. The third side 1223 is a side that connects the first side 1221 and the second side 1222, and has a curved shape in the illustrated example. The illustrated second covering portion 122 has one end reaching the second partition portion second edge 220 and the other end reaching the second partition portion third edge 230.
　上述した第１被覆部１１２および第２被覆部１２２の形状に対応して、本実施形態の
基板露出領域４１０は、ｚ方向視において第２区画部２１と重なっており、交差部４１５および交差部４１６を有する。交差部４１５は、基板露出領域４１０が第２区画部第２端縁２２０と交差する部分である。交差部４１６は、基板露出領域４１０が第２区画部第３端縁２３０と交差する部分である。 Corresponding to the shape of the first covering portion 112 and the second covering portion 122 described above, the substrate exposed region 410 of the present embodiment overlaps the second partition portion 21 when viewed in the z direction, and the intersecting portion 415 and the intersecting portion. 416. The intersecting portion 415 is a portion where the substrate exposed region 410 intersects the second partition portion second edge 220. The intersecting portion 416 is a portion where the substrate exposed region 410 intersects the second partition portion third edge 230.
　図２２０～図２２４に示すように、光電変換層３は、複数の光電変換層接続部３３を有する。図２２２～図２２４に示すように、光電変換層接続部３３は、ｚ方向視において基板露出領域４１０の一部（図２２２に示す部位の場合、第１区画部１１－２の第１辺１１１と第１区画部１１－３の第２辺１２１とによって規定された部分）を挟んで隣り合う第１導電層１の第１区画部１１（図２２２に示す部位の場合、第１区画部１１－２）と第２導電層２の第２区画部２１（図２２２に示す部位の場合、第２区画部２１－３）の双方と重なる部分であって、当該第１区画部１１の第１被覆部１１２および当該第２区画部２１の第２区画部第２端縁２２０によって区画された部分である。また、本実施形態においては、光電変換層接続部３３は、第２区画部第３端縁２３０（図２２２に示す部位の場合、第２区画部２１－３の第２区画部第３端縁２３０）によって区画されている。すなわち、本実施形態の光電変換層接続部３３は、ｚ方向視において矩形状とされた第２区画部２１（図２２２に示す部位の場合、第２区画部２１－３）の角部に重なる位置に設けられている。さらに、本実施形態においては、図２２０に示すように、１つの第２区画部２１に対して、２つの光電変換層接続部３３が、ｙ方向に離間した２つの角部に重なる位置に設けられている。 220 to 224, the photoelectric conversion layer 3 has a plurality of photoelectric conversion layer connection portions 33. As shown in FIGS. 222 to 224, the photoelectric conversion layer connecting portion 33 is part of the substrate exposed region 410 when viewed in the z direction (in the case of the portion shown in FIG. 222, the first side 111 of the first partitioning portion 11-2). And a portion defined by the second side 121 of the first partition part 11-3) and the first partition part 11 of the first conductive layer 1 adjacent to each other (in the case of the part shown in FIG. 222, the first partition part 11) -2) and the second partition part 21 of the second conductive layer 2 (in the case of the part shown in FIG. 222, the second partition part 21-3) overlaps both the first partition part 11 and the first partition part 11 This is a portion defined by the covering portion 112 and the second partition portion second edge 220 of the second partition portion 21. Further, in the present embodiment, the photoelectric conversion layer connecting portion 33 has the second partition portion third edge 230 (in the case of the portion shown in FIG. 222, the second partition portion third edge of the second partition portion 21-3). 230). That is, the photoelectric conversion layer connecting portion 33 of the present embodiment overlaps the corner of the second partition portion 21 (second partition portion 21-3 in the case of the portion shown in FIG. 222) that is rectangular when viewed in the z direction. In the position. Furthermore, in the present embodiment, as shown in FIG. 220, two photoelectric conversion layer connection portions 33 are provided at positions overlapping two corner portions separated in the y direction with respect to one second partition portion 21. It has been.
　光電変換層接続部３３には、光電変換層貫通部３３１が形成されている。光電変換層貫通部３３１は、光電変換層３をｚ方向に貫通する貫通孔によって構成されている。光電変換層貫通部３３１の形状や大きさは特に限定されず、図示された例においては、ｚ方向視円形状とされている。また、この光電変換層貫通部３３１の直径は、たとえば４０μｍ程度である。 In the photoelectric conversion layer connecting portion 33, a photoelectric conversion layer penetrating portion 331 is formed. The photoelectric conversion layer penetrating part 331 is configured by a through hole that penetrates the photoelectric conversion layer 3 in the z direction. The shape and size of the photoelectric conversion layer penetrating portion 331 are not particularly limited, and in the illustrated example, the photoelectric conversion layer penetrating portion 331 has a circular shape in the z direction. Moreover, the diameter of this photoelectric conversion layer penetration part 331 is about 40 micrometers, for example.
　第１区画部１１－１～３は、第１接続部１３を有する。第１接続部１３は、ｚ方向視において光電変換層接続部３３と一致する部分である。第２区画部２１は、第２接続部２３を有する、第２接続部２３は、ｚ方向視において光電変換層接続部３３と一致する部分である。第１区画部１１－１～３の第１接続部１３と第２区画部２１－２～４第２接続部２３とは、光電変換層貫通部３３１を通じて互いに接触しており、互いに導通している。このため、第１接続部１３、第２接続部２３および光電変換層接続部３３は、発電を行わない部分となっている。 The first partition units 11-1 to 11-3 have a first connection unit 13. The first connection portion 13 is a portion that coincides with the photoelectric conversion layer connection portion 33 when viewed in the z direction. The 2nd division part 21 has the 2nd connection part 23. The 2nd connection part 23 is a part which corresponds with the photoelectric converting layer connection part 33 in z direction view. The first connecting portion 13 of the first partitioning portions 11-1 to 11-3 and the second connecting portions 21-2 to 4-4 are in contact with each other through the photoelectric conversion layer penetrating portion 331 and are electrically connected to each other. Yes. For this reason, the 1st connection part 13, the 2nd connection part 23, and the photoelectric converting layer connection part 33 are parts which do not generate electric power.
　本実施形態においては、第１区画部１１の第１接続部１３に第１貫通部１３１が設けられている。本実施形態においては、第１導電層１をｚ方向に貫通する貫通孔を第１貫通部１３１と称する。第１貫通部１３１は、ｚ方向視において光電変換層貫通部３３１に内包されている。また、第１貫通部１３１の内端縁は、ｚ方向視において光電変換層貫通部３３１の内端縁から離間している。これにより、第１区画部１１の第１接続部１３の一部が、ｚ方向視において光電変換層貫通部３３１から露出している。この露出した部分に第２導電層２の第２区画部２１－２～４の第２接続部２３が接触している。また、第２区画部２１－２～４の第２接続部２３は、第１貫通部１３１を介して支持基板４１に接している。 In the present embodiment, the first penetration part 131 is provided in the first connection part 13 of the first partition part 11. In the present embodiment, a through hole that penetrates the first conductive layer 1 in the z direction is referred to as a first through portion 131. The first penetration part 131 is included in the photoelectric conversion layer penetration part 331 when viewed in the z direction. Further, the inner end edge of the first penetrating part 131 is separated from the inner end edge of the photoelectric conversion layer penetrating part 331 when viewed in the z direction. Thereby, a part of the 1st connection part 13 of the 1st division part 11 is exposed from the photoelectric converting layer penetration part 331 in z direction view. The second connection portions 23 of the second partition portions 21-2 to 21-4 of the second conductive layer 2 are in contact with the exposed portions. Further, the second connection portions 23 of the second partition portions 21-2 to 21-4 are in contact with the support substrate 41 through the first penetration portion 131.
　光電変換層３は、複数の光電変換層発電部３２を有している。また、第１導電層１の第１区画部１１は、第１電極部１２を有しており、第２導電層２の第２区画部２１は、第２電極部２２を有している。図２２０、図２２２および図２２５においては、第１電極部１２、第２電極部２２および光電変換層発電部３２に、複数の離散点からなるハッチングを付している。第１電極部１２は、ｚ方向視において光電変換層接続部３３と重ならず且つ第２導電層２の第２区画部２１と重なる部分である。言い換えれば第２区画部２１は、ｚ方向視において、第１電極部１２と一致する部分である。光電変換層発電部３２は、ｚ方向視において、第１電極部１２および第２電極部２２と一致する部分である。本実施形態においては、第１電極部１２、第２電極部２２および光電変換層発電部３２は、ｚ方向視において第２区画部第１端縁２１０、第２区画部第２端縁２２０、２つの第２区画部第３端縁２３０および２つの第２被覆部１２２によって規定された部分である。第１電極部１２および第２電極部２２は、光電変換層発電部３２を介して積層されており、互いに接触していない。これにより、第１電極部１２、第２電極部２２および光電変換層発電部３２は、発電を行う部分となっている。 The photoelectric conversion layer 3 has a plurality of photoelectric conversion layer power generation units 32. Further, the first partition portion 11 of the first conductive layer 1 has a first electrode portion 12, and the second partition portion 21 of the second conductive layer 2 has a second electrode portion 22. 220, 222, and 225, the first electrode unit 12, the second electrode unit 22, and the photoelectric conversion layer power generation unit 32 are hatched with a plurality of discrete points. The first electrode portion 12 is a portion that does not overlap with the photoelectric conversion layer connection portion 33 and overlaps with the second partition portion 21 of the second conductive layer 2 when viewed in the z direction. In other words, the second partition portion 21 is a portion that coincides with the first electrode portion 12 when viewed in the z direction. The photoelectric conversion layer power generation unit 32 is a portion that coincides with the first electrode unit 12 and the second electrode unit 22 when viewed in the z direction. In this embodiment, the 1st electrode part 12, the 2nd electrode part 22, and the photoelectric converting layer electric power generation part 32 are 2nd division part 1st edge 210, 2nd division part 2nd edge 220 in z direction view, This is a portion defined by the two second partition portion third edges 230 and the two second covering portions 122. The 1st electrode part 12 and the 2nd electrode part 22 are laminated | stacked via the photoelectric converting layer electric power generation part 32, and are not mutually contacting. Thereby, the 1st electrode part 12, the 2nd electrode part 22, and the photoelectric converting layer electric power generation part 32 are parts which generate electric power.
　本実施形態においては、ｚ方向視において、光電変換層接続部３３と光電変換層発電部３２の一部とが、ｙ方向において隙間を介して隣り合っている。すなわち、光電変換層接続部３３は、ｘ方向における位置が、光電変換層発電部３２の一部のｘ方向位置と同じである。また、第１接続部１３は、基板露出領域４１０を介して隣り合う第１区画部１１の第１電極部１２の一部とｙ方向において隣り合っている。すなわち、当該第１接続部１３は、ｘ方向における位置が、当該第１電極部１２の一部のｘ方向位置と重なっている。 In the present embodiment, when viewed in the z direction, the photoelectric conversion layer connection portion 33 and a part of the photoelectric conversion layer power generation portion 32 are adjacent to each other with a gap in the y direction. That is, the position of the photoelectric conversion layer connection unit 33 in the x direction is the same as the position in the x direction of a part of the photoelectric conversion layer power generation unit 32. Further, the first connection portion 13 is adjacent to a part of the first electrode portion 12 of the first partition portion 11 adjacent to each other via the substrate exposed region 410 in the y direction. That is, the position of the first connection portion 13 in the x direction overlaps with a part of the first electrode portion 12 in the x direction.
　図２２０、図２２１、図２２５および図２２６に示すように、第３区画部１５は、外部電極部１５１および外部接続部１５３を有する。外部接続部１５３は、ｚ方向視において第２区画部２１－１の第２接続部２３および光電変換層接続部３３と一致する部分である。外部接続部１５３は、光電変換層貫通部３３１を通じて第２区画部２１－１の第２接続部２３と接触している。本実施形態においては、外部接続部１５３には、外部接続部貫通部１５３１が設けられている。本実施形態においては、第１導電層１の外部接続部１５３をｚ方向に貫通する貫通孔を外部接続部貫通部１５３１と称する。外部接続部貫通部１５３１は、ｚ方向視において光電変換層貫通部３３１に内包されている。また、外部接続部貫通部１５３１の内端縁は、ｚ方向視において光電変換層貫通部３３１の内端縁から離間している。これにより、第３区画部１５の外部接続部１５３の一部が、ｚ方向視において光電変換層貫通部３３１から露出している。この露出した部分に第２導電層２の第２区画部２１－１の第２接続部２３が接触している。また、第２接続部２３は、外部接続部貫通部１５３１を介して支持基板４１に接している。外部電極部１５１は、第２導電層２、光電変換層３およびパッシベーション層４２から露出した部分である。外部電極部１５１は、有機薄膜太陽電池モジュールＡ２２において発電された電力を出力する部位であり、たとえば電子機器Ｂ２２の端子に導通する。 220, FIG. 221, FIG. 225, and FIG. 226, the third partition part 15 has an external electrode part 151 and an external connection part 153. The external connection portion 153 is a portion that coincides with the second connection portion 23 and the photoelectric conversion layer connection portion 33 of the second partition portion 21-1 when viewed in the z direction. The external connection part 153 is in contact with the second connection part 23 of the second partition part 21-1 through the photoelectric conversion layer penetration part 331. In the present embodiment, the external connection portion 153 is provided with an external connection portion penetration portion 1531. In the present embodiment, a through hole that penetrates the external connection portion 153 of the first conductive layer 1 in the z direction is referred to as an external connection portion through portion 1531. The external connection portion penetration portion 1531 is included in the photoelectric conversion layer penetration portion 331 as viewed in the z direction. Further, the inner end edge of the external connection portion penetration portion 1531 is separated from the inner end edge of the photoelectric conversion layer penetration portion 331 when viewed in the z direction. Thereby, a part of external connection part 153 of the 3rd division part 15 is exposed from the photoelectric converting layer penetration part 331 in z direction view. The second connection part 23 of the second partition part 21-1 of the second conductive layer 2 is in contact with the exposed part. The second connection portion 23 is in contact with the support substrate 41 through the external connection portion through portion 1531. The external electrode portion 151 is a portion exposed from the second conductive layer 2, the photoelectric conversion layer 3, and the passivation layer 42. The external electrode portion 151 is a portion that outputs the electric power generated in the organic thin film solar cell module A22, and is electrically connected to the terminal of the electronic device B22, for example.
　また、本実施形態においては、図２２０および図２２１に示すように、ｘ方向において第３区画部１５とは反対側に設けられた第１区画部１１－４が、外部電極部１４１を有している。外部電極部１４１は、第１区画部１１－４のうち第２導電層２、光電変換層３およびパッシベーション層４２から露出した部分である。外部電極部１４１は、有機薄膜太陽電池モジュールＡ２２において発電された電力を出力する部位であり、たとえば電子機器Ｂ２２の端子に導通する。 In the present embodiment, as shown in FIGS. 220 and 221, the first partition portion 11-4 provided on the opposite side to the third partition portion 15 in the x direction has the external electrode portion 141. ing. The external electrode portion 141 is a portion exposed from the second conductive layer 2, the photoelectric conversion layer 3, and the passivation layer 42 in the first partition portion 11-4. The external electrode part 141 is a part that outputs electric power generated in the organic thin film solar cell module A22, and is electrically connected to, for example, a terminal of the electronic device B22.
　図２２０、図２２１および図２２７から理解されるように、本実施形態においては、有機薄膜太陽電池モジュールＡ２２において、４組の第１電極部１２、第２電極部２２および光電変換層発電部３２が、６組の第１接続部１３、第２接続部２３および光電変換層接続部３３を介して互いに直接に接続されている。直列接続された４組の第１電極部１２、第２電極部２２および光電変換層発電部３２において発電された電力は、外部電極部１４１および外部電極部１５１から出力される。この電力は、電子機器Ｂ２２の駆動部７１の駆動に用いられる。 As can be understood from FIGS. 220, 221 and 227, in the present embodiment, in the organic thin film solar cell module A22, four sets of the first electrode unit 12, the second electrode unit 22, and the photoelectric conversion layer power generation unit 32. Are directly connected to each other through six sets of the first connection portion 13, the second connection portion 23, and the photoelectric conversion layer connection portion 33. The electric power generated in the four sets of the first electrode unit 12, the second electrode unit 22, and the photoelectric conversion layer power generation unit 32 connected in series is output from the external electrode unit 141 and the external electrode unit 151. This electric power is used to drive the drive unit 71 of the electronic apparatus B22.
　次に、有機薄膜太陽電池モジュールＡ２２の製造方法の一例について、図２２８～図２３５を参照しつつ、以下に説明する。なお、図２２８、図２３０、図２３２および図２３４は、図２２２と同様の部分を示す要部拡大平面図であり、図２２９、図２３１、図２３３および図２３５は、図２２３と同様の部分を示す要部拡大断面図である。 Next, an example of a method for producing the organic thin film solar cell module A22 will be described below with reference to FIGS. 228 to 235. 228, 230, 232, and 234 are enlarged plan views of main parts showing the same parts as in FIG. 222, and FIGS. 229, 231, 233, and 235 are the same parts as in FIG. It is a principal part expanded sectional view which shows this.
　まず、図２２８および図２２９に示すように、支持基板４１の片面にたとえばスパッタ法などの一般的な手法によりＩＴＯを成膜することにより、第１導電膜１０を形成する。次いで、第１導電膜１０をパターニングすることにより、基板露出領域４１０、基板露出領域４１１および基板露出領域４１２形成し、複数の第１区画部１１および第３区画部１５が得られる。第１導電膜１０へのパターニング手法としては、たとえばウエットエッチングを用いた手法、Ｇｒｅｅｎレーザー光やＩＲレーザー光等のレーザーパターニングを用いた手法が適宜採用される。本実施形態においては、レーザー光Ｌｚ１として、ＩＲレーザー光が用いられる。なお、図２２８においては、後述する工程を経ることにより第１被覆部１１２および第２被覆部１２２となる部位に理解の便宜上、符号を付している。 First, as shown in FIGS. 228 and 229, the first conductive film 10 is formed by depositing ITO on one surface of the support substrate 41 by a general method such as sputtering. Next, by patterning the first conductive film 10, a substrate exposed region 410, a substrate exposed region 411 and a substrate exposed region 412 are formed, and a plurality of first partition portions 11 and third partition portions 15 are obtained. As a patterning method for the first conductive film 10, for example, a method using wet etching and a method using laser patterning such as Green laser light and IR laser light are appropriately employed. In the present embodiment, IR laser light is used as the laser light Lz1. Note that, in FIG. 228, reference numerals are assigned to portions that become the first covering portion 112 and the second covering portion 122 through the steps described later for the sake of convenience.
　次いで、図２３０および図２３１に示すように、有機膜３０を形成する。有機膜３０の形成は、たとえば、スピンコート塗布により支持基板４１上および第１導電膜１０上に有機膜を成膜することによりなされる。次いで、有機膜３０に対して光電変換層貫通部３３１を形成する。光電変換層貫通部３３１の形成は、たとえばレーザーパターニングによってなされる。このレーザーパターニングに用いられるレーザー光Ｌｚ２は、光電変換層貫通部３３１を部分的に除去可能であるものが適宜選択される。本実施形態においては、レーザー光Ｌｚ２としてＩＲレーザー光を用いたレーザーパターニングを行った場合を例に説明する。この場合、レーザー光Ｌｚ２は、有機膜３０と第１導電膜１０との一部ずつを除去する。このため、有機膜３０に光電変換層貫通部３３１が形成されるとともに、第１導電膜１０に第１貫通部１３１が形成される。このパターニングを経ることにより、図２３２および図２３３に示すように、第１導電層１および光電変換層３が得られる。 Next, as shown in FIGS. 230 and 231, an organic film 30 is formed. The organic film 30 is formed, for example, by forming an organic film on the support substrate 41 and the first conductive film 10 by spin coating. Next, the photoelectric conversion layer penetrating portion 331 is formed in the organic film 30. The photoelectric conversion layer penetrating part 331 is formed by, for example, laser patterning. As the laser beam Lz2 used for this laser patterning, one that can partially remove the photoelectric conversion layer penetrating portion 331 is appropriately selected. In the present embodiment, a case where laser patterning using an IR laser beam as the laser beam Lz2 is performed will be described as an example. In this case, the laser beam Lz2 removes part of the organic film 30 and the first conductive film 10 one by one. For this reason, the photoelectric conversion layer penetration part 331 is formed in the organic film 30, and the first penetration part 131 is formed in the first conductive film 10. By performing this patterning, the first conductive layer 1 and the photoelectric conversion layer 3 are obtained as shown in FIGS. 232 and 233.
　次いで、図２３４および図２３５に示すように、第２導電層２を形成する。第２導電層２の形成は、たとえば上述した金属を真空加熱蒸着法によって支持基板４１、第１導電層１および光電変換層３上に金属膜を成膜する。次に、該金属膜に例えばマスク層を用いたエッチングを行うことによりパターニングを施す。このパターニングにより、第１導電層１上および光電変換層３上に複数の第２区画部２１を有する第２導電層２を形成する。この後は、たとえばプラズマＣＶＤ法によってＳｉＮまたはＳｉＯＮを支持基板４１、第１導電層１、光電変換層３および第２導電層２上に成膜することにより、パッシベーション層４２を形成する。以上の工程を経ることにより、有機薄膜太陽電池モジュールＡ２２が得られる。 Next, as shown in FIGS. 234 and 235, the second conductive layer 2 is formed. The second conductive layer 2 is formed, for example, by forming a metal film on the support substrate 41, the first conductive layer 1 and the photoelectric conversion layer 3 using the above-described metal by vacuum heating vapor deposition. Next, the metal film is patterned by etching using, for example, a mask layer. By this patterning, the second conductive layer 2 having a plurality of second partition portions 21 is formed on the first conductive layer 1 and the photoelectric conversion layer 3. Thereafter, a passivation layer 42 is formed by depositing SiN or SiON on the support substrate 41, the first conductive layer 1, the photoelectric conversion layer 3, and the second conductive layer 2 by, for example, plasma CVD. Through the above steps, an organic thin film solar cell module A22 is obtained.
　次に、有機薄膜太陽電池モジュールＡ２２および電子機器Ｂ２２の作用について説明する。 Next, the operation of the organic thin film solar cell module A22 and the electronic device B22 will be described.
　本実施形態によれば、図２２２に示すように、光電変換層接続部３３を区画する第１区画部１１－２の第１被覆部１１２によってその一部が規定された基板露出領域４１０は、第２区画部２１－３の第２区画部第２端縁２２０と交差する交差部４１５を有する。これにより、第２区画部２１－３の第２区画部第２端縁２２０に沿って光電変換層接続部３３が部分的に設けられる構成となり、第２区画部２１－３の第２区画部第２端縁２２０の全長にわたって光電変換層接続部３３が設けられる構成とはならない。したがって、光電変換層３のうち非発電の部分である光電変換層接続部３３の面積割合を減少させることが可能であり、実際に発電に寄与する部分である光電変換層発電部３２の減少を抑制することができる。 According to the present embodiment, as shown in FIG. 222, the substrate exposed region 410 partially defined by the first covering portion 112 of the first partition portion 11-2 that partitions the photoelectric conversion layer connecting portion 33 is The cross section 415 intersects the second partition portion second edge 220 of the second partition portion 21-3. As a result, the photoelectric conversion layer connecting portion 33 is partially provided along the second partition portion second edge 220 of the second partition portion 21-3, and the second partition portion of the second partition portion 21-3. The photoelectric conversion layer connection portion 33 is not provided over the entire length of the second end edge 220. Therefore, it is possible to reduce the area ratio of the photoelectric conversion layer connection portion 33 that is a non-power generation portion of the photoelectric conversion layer 3, and to reduce the photoelectric conversion layer power generation portion 32 that is a portion that actually contributes to power generation. Can be suppressed.
　また、図２２２に示す例においては、基板露出領域４１０は、１の交差部４１５と１つの交差部４１６とを有している。すなわち、光電変換層接続部３３を区画する基板露出領域４１０は、第２区画部２１－３の第２区画部第２端縁２２０から延びて第２区画部２１－３の第２区画部第３端縁２３０と交差している。たとえば、本例とは異なり、基板露出領域４１０が第２区画部２１－３の第２区画部第２端縁２２０と２箇所で交差する場合、本例と比べてｚ方向視において第２区画部２１－３と重なる基板露出領域４１０が長くなる。基板露出領域４１０は、非発電の部分であるため、このような非発電の部分の面積割合を縮小するのに適している。 Further, in the example shown in FIG. 222, the substrate exposed region 410 has one intersection 415 and one intersection 416. That is, the substrate exposed region 410 that partitions the photoelectric conversion layer connection portion 33 extends from the second partition portion second edge 220 of the second partition portion 21-3 and extends from the second partition portion 21-3 of the second partition portion 21-3. Crosses 3 edge 230. For example, unlike the present example, when the substrate exposed region 410 intersects the second partition part second end edge 220 of the second partition part 21-3 at two locations, the second partition is viewed in the z direction as compared to the present example. The substrate exposed region 410 that overlaps the portion 21-3 becomes longer. Since the substrate exposed region 410 is a non-power generation portion, it is suitable for reducing the area ratio of such a non-power generation portion.
　光電変換層貫通部３３１は、たとえば直径が４０μｍ程度の貫通孔によって構成されている。このため、光電変換層貫通部３３１を含む光電変換層接続部３３の面積をより縮小させることができる。 The photoelectric conversion layer penetrating portion 331 is constituted by a through hole having a diameter of about 40 μm, for example. For this reason, the area of the photoelectric conversion layer connection part 33 including the photoelectric conversion layer penetrating part 331 can be further reduced.
　第１貫通部１３１は、図２３１に示すレーザー光Ｌｚ２としてたとえばＩＲレーザー光を用いた場合に、光電変換層貫通部３３１と一括して形成される。このＩＲレーザー光は、ＩＴＯからなる第１導電層１を部分的に除去可能であるため、図２２９に示す第１導電膜１０のレーザーパターニングにおけるレーザー光Ｌｚ１として用いることができる。これにより、図２２８～図２３５に示す有機薄膜太陽電池モジュールＡ２２の製造方法において、レーザー光Ｌｚ１およびレーザー光Ｌｚ２として、１種類のレーザー光（ＩＲレーザー光）を用いれば済む。これは、製造方法および製造装置の簡略化に好ましく、制造時間の短縮に寄与する。 The first through part 131 is formed together with the photoelectric conversion layer through part 331 when, for example, IR laser light is used as the laser light Lz2 shown in FIG. Since this IR laser light can partially remove the first conductive layer 1 made of ITO, it can be used as the laser light Lz1 in the laser patterning of the first conductive film 10 shown in FIG. Thus, in the method for manufacturing the organic thin-film solar cell module A22 shown in FIGS. 228 to 235, one type of laser light (IR laser light) may be used as the laser light Lz1 and the laser light Lz2. This is preferable for simplification of the manufacturing method and the manufacturing apparatus, and contributes to shortening of the manufacturing time.
　第２区画部２１の２つの角部に重なる位置に２組の第１接続部１３、第２接続部２３および光電変換層接続部３３を設けることにより、隣り合う２組の第１電極部１２、第２電極部２２および光電変換層発電部３２の間の抵抗をより低くすることができる。また、仮に一方の組の第１接続部１３、第２接続部２３および光電変換層接続部３３における導通が不適切な状態となったとしても、他方の組の第１接続部１３、第２接続部２３および光電変換層接続部３３によって隣り合う２組の第１電極部１２、第２電極部２２および光電変換層発電部３２を適切に接続することができる。 By providing two sets of the first connection part 13, the second connection part 23, and the photoelectric conversion layer connection part 33 at a position overlapping the two corners of the second partition part 21, two adjacent sets of the first electrode parts 12. The resistance between the second electrode unit 22 and the photoelectric conversion layer power generation unit 32 can be further reduced. In addition, even if conduction in the first connection portion 13, the second connection portion 23, and the photoelectric conversion layer connection portion 33 in one set becomes inappropriate, the first connection portion 13, the second connection in the other set. The two adjacent first electrode parts 12, the second electrode part 22, and the photoelectric conversion layer power generation part 32 can be appropriately connected by the connection part 23 and the photoelectric conversion layer connection part 33.
　図２３６～図２４４は、本発明の変形例および他の実施形態を示している。なお、これらの図において、上記実施形態と同一または類似の要素には、上記実施形態と同一の符号を付している。 236 to 244 show a modification and other embodiments of the present invention. In these drawings, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment.
　図２３６は、有機薄膜太陽電池モジュールＡ２２の変形例を示している。本変形例においては、第１区画部１１（図２３６における第１区画部１１－２）の第１接続部１３に、上述した第１貫通部１３１が形成されていない。すなわち、ｚ方向視において光電変換層貫通部３３１に内包される領域においては、支持基板４１は、第１導電層１の第１接続部１３（図２３６における第１区画部１１－２の第１接続部１３）によって覆われている。このような構成は、たとえば、有機膜３０に光電変換層貫通部３３１を形成するためのレーザーパターニングにおいて、レーザー光Ｌｚ２としてＧｒｅｅｎレーザー光を用いるとともに、出力や照射時間を適切に設定することによって実現しうる。 FIG. 236 shows a modification of the organic thin film solar cell module A22. In the present modification, the first through portion 131 described above is not formed in the first connection portion 13 of the first partition portion 11 (the first partition portion 11-2 in FIG. 236). That is, in the region enclosed in the photoelectric conversion layer penetrating portion 331 when viewed in the z direction, the support substrate 41 has the first connection portion 13 of the first conductive layer 1 (the first partition portion 11-2 in FIG. It is covered by a connection 13). Such a configuration is realized, for example, by using Green laser light as the laser light Lz2 and appropriately setting the output and irradiation time in laser patterning for forming the photoelectric conversion layer penetrating portion 331 in the organic film 30. Yes.
　このような変形例によっても、実際に発電に寄与する部分である光電変換層発電部３２の減少を抑制することができる。なお、以降の実施形態においては、光電変換層貫通部３３１が設けられた領域において、第１貫通部１３１を形成してもよいし、第１貫通部１３１を形成しなくてもよい。 Even with such a modification, it is possible to suppress a decrease in the photoelectric conversion layer power generation unit 32 that is a part that actually contributes to power generation. In the following embodiments, the first through part 131 may be formed in the region where the photoelectric conversion layer through part 331 is provided, or the first through part 131 may not be formed.
　図２３８～図２４０は、本発明の第２３実施形態に基づく有機薄膜太陽電池モジュールを示している。本実施形態の有機薄膜太陽電池モジュールＡ２３においては、第１接続部１３、第２接続部２３および光電変換層接続部３３の構成が、上述した実施形態と異なっている。図２３７は、有機薄膜太陽電池モジュールＡ２３を示す要部平面図である。図２３８は、有機薄膜太陽電池モジュールＡ２３を示す要部拡大平面図である。図２３９は、図２３８のＣＣＸＸＸＩＸ－ＣＣＸＸＸＩＸ線に沿う要部拡大断面図である。図２４０は、図２３８のＣＣＸＬ－ＣＣＸＬ線に沿う要部拡大断面図である。 238 to 240 show an organic thin film solar cell module according to a twenty-third embodiment of the present invention. In organic thin-film solar cell module A23 of this embodiment, the structure of the 1st connection part 13, the 2nd connection part 23, and the photoelectric converting layer connection part 33 differs from embodiment mentioned above. FIG. 237 is a plan view of a principal part showing the organic thin film solar cell module A23. FIG. 238 is an enlarged plan view of a main part showing the organic thin film solar cell module A23. 239 is an enlarged cross-sectional view of a main part taken along the line CCXXXIX-CCXXXIX in FIG. 240 is an enlarged cross-sectional view of a main part taken along the line CCXL-CCXL in FIG.
　本実施形態においては、図２３７に示すように、ｙ方向に離間する第２区画部２１の２つの角部に対応した位置に設けられた２組の第１接続部１３、第２接続部２３および光電変換層接続部３３配置の間に１組の第１接続部１３、第２接続部２３および光電変換層接続部３３が設けられている。図２３８～図２４０に示すように、ｚ方向視においてこの第１接続部１３、第２接続部２３および光電変換層接続部３３を区画する基板露出領域４１０は、第２区画部２１－３の第２区画部第２端縁２２０と交差する２つの交差部４１５を有している。２つの交差部４１５は、ｙ方向に互いに離間している。また、この第１区画部１１－２の第１接続部１３、第２区画部２１－３の第２接続部２３および光電変換層接続部３３のｙ方向両側に、第１区画部１１－３の第１電極部１２、第２区画部２１－３の第２電極部２２および光電変換層発電部３２が位置している。すなわち、この第１区画部１１－２の第１接続部１３、第２区画部２１－３の第２接続部２３および光電変換層接続部３３は、ｙ方向において第１区画部１１－２の第１電極部１２、第２区画部２１－３第２電極部２２および光電変換層発電部３２に挟まれている。本実施形態においては、第１被覆部１１２は、２つの第１辺１１２１、第２辺１１２２および２つの第３辺１１２３を有する。また、第２被覆部１２２は、２つの第１辺１２２１、第２辺１２２２および２つの第３辺１２２３を有する。 In the present embodiment, as shown in FIG. 237, two sets of the first connection portion 13 and the second connection portion 23 provided at positions corresponding to the two corner portions of the second partition portion 21 that are separated in the y direction. A pair of the first connection portion 13, the second connection portion 23, and the photoelectric conversion layer connection portion 33 are provided between the photoelectric conversion layer connection portion 33 and the photoelectric conversion layer connection portion 33. As shown in FIGS. 238 to 240, the substrate exposed region 410 that divides the first connection portion 13, the second connection portion 23, and the photoelectric conversion layer connection portion 33 in the z-direction view is formed on the second partition portion 21-3. Two intersection portions 415 intersecting the second partition portion second edge 220 are provided. The two intersections 415 are separated from each other in the y direction. In addition, on the both sides in the y direction of the first connection part 13 of the first partition part 11-2, the second connection part 23 of the second partition part 21-3, and the photoelectric conversion layer connection part 33, the first partition part 11-3 The first electrode part 12, the second electrode part 22 of the second partition part 21-3, and the photoelectric conversion layer power generation part 32 are located. That is, the first connection part 13 of the first partition part 11-2, the second connection part 23 of the second partition part 21-3, and the photoelectric conversion layer connection part 33 are connected to the first partition part 11-2 in the y direction. It is sandwiched between the first electrode part 12, the second partition part 21-3, the second electrode part 22, and the photoelectric conversion layer power generation part 32. In the present embodiment, the first covering portion 112 has two first sides 1121, a second side 1122, and two third sides 1123. The second covering portion 122 has two first sides 1221, a second side 1222, and two third sides 1223.
　このような実施形態によっても、実際に発電に寄与する部分である光電変換層発電部３２の減少を抑制することができる。また、図２３８に示す光電変換層接続部３３は、非発電の領域であるものの、これを区画する基板露出領域４１０が、第２区画部２１－３の第２区画部第２端縁２２０と交差する２つの交差部４１５を有する構成となっている。言い換えると、光電変換層接続部３３のｙ方向両側には、光電変換層発電部３２が位置している。これにより、第２区画部第２端縁２２０の全長にわたって光電変換層接続部３３が設けられている構成と比べて、光電変換層発電部３２減少を抑制することができる。また、図２３８に示す第１接続部１３、第２接続部２３および光電変換層接続部３３を設けることにより、隣り合う２組の第１電極部１２、第２電極部２２および光電変換層発電部３２の間の抵抗をより低くするとともに、より確実に導通させることができる。 Even in such an embodiment, it is possible to suppress a decrease in the photoelectric conversion layer power generation unit 32 that is a part that actually contributes to power generation. Further, although the photoelectric conversion layer connecting portion 33 shown in FIG. 238 is a non-power generation region, the substrate exposed region 410 that divides the photoelectric conversion layer connecting portion 33 is connected to the second partition portion second edge 220 of the second partition portion 21-3. It has a configuration having two intersecting portions 415 that intersect. In other words, the photoelectric conversion layer power generation units 32 are located on both sides of the photoelectric conversion layer connection unit 33 in the y direction. Thereby, compared with the structure by which the photoelectric converting layer connection part 33 is provided over the full length of the 2nd division part 2nd edge 220, the photoelectric converting layer electric power generation part 32 reduction | decrease can be suppressed. Further, by providing the first connection portion 13, the second connection portion 23, and the photoelectric conversion layer connection portion 33 shown in FIG. 238, two adjacent sets of the first electrode portion 12, the second electrode portion 22, and the photoelectric conversion layer power generation are provided. While making resistance between the parts 32 lower, it can conduct more reliably.
　図２４１は、本発明の第２４実施形態に基づく有機薄膜太陽電池モジュールＡ２４を示す要部拡大平面図である。本実施形態においては、上述した有機薄膜太陽電池モジュールＡ２３と同様の第１接続部１３、第２接続部２３および光電変換層接続部３３を有するものの、第１区画部第１端縁１１０、第１区画部第２端縁１２０、第２区画部第１端縁２１０、第２区画部第２端縁２２０および基板露出領域４１０の形状が、上述した実施形態と異なっている。 FIG. 241 is a main part enlarged plan view showing an organic thin-film solar cell module A24 based on the twenty-fourth embodiment of the present invention. In this embodiment, although it has the 1st connection part 13, the 2nd connection part 23, and the photoelectric converting layer connection part 33 similar to organic thin-film solar cell module A23 mentioned above, the 1st division part 1st edge 110, the 1st The shape of the 1st division part 2nd edge 120, the 2nd division part 1st edge 210, the 2nd division part 2nd edge 220, and the board | substrate exposure area | region 410 differs from embodiment mentioned above.
　本実施形態においては、図２２２における第１区画部１１－２の第１辺１１１および第１区画部１１－３の第２辺１２１が、いずれも曲線状とされている。ただし、これらの第１辺１１１と第２辺１２１とは、互いに平行である。また、第２区画部２１－２の第２区画部第１端縁２１０および第２区画部２１－３の第２区画部第２端縁２２０が、いずれも曲線状とされている。ただし、これらの第２区画部第１端縁２１０と第２区画部第２端縁２２０とは、互いに平行である。また、これらの第１辺１１１、第２辺１２１、第２区画部第１端縁２１０および第２区画部第２端縁２２０は、互いに平行である。 In the present embodiment, the first side 111 of the first partition 11-2 and the second side 121 of the first partition 11-3 in FIG. 222 are both curved. However, the first side 111 and the second side 121 are parallel to each other. Further, the second partition part first end edge 210 of the second partition part 21-2 and the second partition part second end edge 220 of the second partition part 21-3 are both curved. However, these 2nd division part 1st edge 210 and 2nd division part 2nd edge 220 are mutually parallel. The first side 111, the second side 121, the second partition portion first edge 210, and the second partition portion second edge 220 are parallel to each other.
　このような実施形態によっても、実際に発電に寄与する部分である光電変換層発電部３２の減少を抑制することができる。また、本実施形態から理解されるように、第１辺１１１および第２辺１２１は、直線状の構成に限定されず、曲線状や折れ線状など様々な形状に設定することができる。また、第２区画部第１端縁２１０および第２区画部第２端縁２２０は、直線状の構成に限定されず、曲線状や折れ線状など様々な形状に設定することができる。 Even in such an embodiment, it is possible to suppress a decrease in the photoelectric conversion layer power generation unit 32 that is a part that actually contributes to power generation. Further, as understood from the present embodiment, the first side 111 and the second side 121 are not limited to a linear configuration, and can be set to various shapes such as a curved shape and a polygonal shape. Moreover, the 2nd division part 1st edge 210 and the 2nd division part 2nd edge 220 are not limited to a linear structure, It can set to various shapes, such as curvilinear form and a broken line form.
　図２４２は、本発明の第２５実施形態に基づく有機薄膜太陽電池モジュールＡ２５を示す要部拡大平面図である。本実施形態においては、上述した有機薄膜太陽電池モジュールＡ２３および有機薄膜太陽電池モジュールＡ２４と同様の第１接続部１３、第２接続部２３および光電変換層接続部３３を有するものの、第１区画部１１－２の第１区画部第１端縁１１０、第１区画部１１－３の第１区画部第２端縁１２０、第２区画部２１－２の第２区画部第１端縁２１０、第２区画部２１－３の第２区画部第２端縁２２０および基板露出領域４１０の形状が、上述した実施形態と異なっている。 FIG. 242 is an essential part enlarged plan view showing an organic thin-film solar cell module A25 based on the twenty-fifth embodiment of the present invention. In this embodiment, although it has the 1st connection part 13, the 2nd connection part 23, and the photoelectric converting layer connection part 33 similar to organic thin-film solar cell module A23 and organic thin-film solar cell module A24 mentioned above, a 1st division part 11-2 first partition portion first edge 110, first partition portion 11-3 first partition portion second edge 120, second partition portion 21-2 second partition portion first edge 210, The shapes of the second partition portion second end edge 220 and the substrate exposed region 410 of the second partition portion 21-3 are different from those of the above-described embodiment.
　本実施形態においては、第１区画部１１－２の第１区画部第１端縁１１０および第１区画部１１－３の第１区画部第２端縁１２０が第１被覆部１１２および第２被覆部１２２以外の部分において、いずれも曲線状の部分を有している。これらの曲線状の部分は、ｚ方向視において互いにｘ方向反対側に凸である形状であり、互いに平行ではない。また、第２区画部２１－２の第２区画部第１端縁２１０および第２区画部２１－３の第２区画部第２端縁２２０は、ｚ方向視において互いにｘ方向反対側に凸である形状であり、互いに平行ではない。ただし、第１区画部１１－２の第１区画部第１端縁１１０の曲線状の部分と第２区画部２１－２の第２区画部第１端縁２１０とは、互いに平行である。また、第１区画部１１－３の第１区画部第２端縁１２０の曲線状の部分と第２区画部２１－３の第２区画部第２端縁２２０とは、互いに平行である。 In the present embodiment, the first partition portion first end edge 110 of the first partition portion 11-2 and the first partition portion second end edge 120 of the first partition portion 11-3 are the first cover portion 112 and the second cover portion 11-2. All portions other than the covering portion 122 have curved portions. These curved portions have shapes that are convex on the opposite sides in the x direction when viewed in the z direction, and are not parallel to each other. Further, the second partition portion first end edge 210 of the second partition portion 21-2 and the second partition portion second end edge 220 of the second partition portion 21-3 are protruded on the opposite sides in the x direction when viewed in the z direction. And are not parallel to each other. However, the curved portion of the first partition portion first edge 110 of the first partition portion 11-2 and the second partition portion first edge 210 of the second partition portion 21-2 are parallel to each other. The curved portion of the first partition portion second end edge 120 of the first partition portion 11-3 and the second partition portion second end edge 220 of the second partition portion 21-3 are parallel to each other.
　このような実施形態によっても、実際に発電に寄与する部分である光電変換層発電部３２の減少を抑制することができる。また、第１区画部第１端縁１１０と第１区画部第２端縁１２０とは、ｚ方向視において第２区画部２１と重ならない部分において、互いに平行ではない構成であってもよい。また、第２区画部第１端縁２１０と第２区画部第２端縁２２０とは、互いに平行ではない構成であってもよい。 Even in such an embodiment, it is possible to suppress a decrease in the photoelectric conversion layer power generation unit 32 that is a part that actually contributes to power generation. Moreover, the 1st division part 1st edge 110 and the 1st division part 2nd edge 120 may be the structure which is not mutually parallel in the part which does not overlap with the 2nd division part 21 in z direction view. Moreover, the 2nd division part 1st edge 210 and the 2nd division part 2nd edge 220 may be the structure which is not mutually parallel.
　図２４３は、本発明の第２６実施形態に基づく有機薄膜太陽電池モジュールＡ２６および電子機器Ｂ２６を示している。本実施形態においては、第１導電層１が８つの第１区画部１１－１～８を有しており、第２導電層２が、８つの第２区画部２１－１～８を有している。また、８組の第１電極部１２、第２電極部２２および光電変換層発電部３２が、１４組の第１接続部１３、第２接続部２３および光電変換層接続部３３によって互いに直列に接続されており、外部電極部１４１および外部電極部１５１から電力が出力される。また、本実施形態においては、８組の第１電極部１２、第２電極部２２および光電変換層発電部３２が、ｚ方向視において環状に配列されている。 FIG. 243 shows an organic thin-film solar cell module A26 and an electronic device B26 based on the twenty-sixth embodiment of the present invention. In the present embodiment, the first conductive layer 1 has eight first partition portions 11-1 to 11-8, and the second conductive layer 2 has eight second partition portions 21-1 to 8-8. ing. Further, eight sets of the first electrode unit 12, the second electrode unit 22, and the photoelectric conversion layer power generation unit 32 are connected in series by the 14 sets of the first connection unit 13, the second connection unit 23, and the photoelectric conversion layer connection unit 33. Power is output from the external electrode portion 141 and the external electrode portion 151. Moreover, in this embodiment, eight sets of the 1st electrode part 12, the 2nd electrode part 22, and the photoelectric converting layer electric power generation part 32 are arranged cyclically | annularly in z direction view.
　ｚ方向視において８組の第１電極部１２、第２電極部２２および光電変換層発電部３２に囲まれた領域は、支持基板４１が存在しており、第１導電層１の一部が存在しうる。ただし、前記領域においては、支持基板４１のみが存在することが好ましい。このような領域は、駆動部７１のうちたとえば液晶表示パネル等によって構成された表示部を、電子機器Ｂ２６の外観に露出させる領域として用いられる。このような電子機器Ｂ２６としては、たとえば液晶型腕時計や携帯型電子端末が挙げられる。 The region surrounded by the eight sets of the first electrode unit 12, the second electrode unit 22, and the photoelectric conversion layer power generation unit 32 in the z-direction view includes the support substrate 41, and a part of the first conductive layer 1 is present. Can exist. However, it is preferable that only the support substrate 41 exists in the region. Such a region is used as a region in which the display unit constituted by, for example, a liquid crystal display panel or the like in the driving unit 71 is exposed to the external appearance of the electronic device B26. Examples of such an electronic device B26 include a liquid crystal wristwatch and a portable electronic terminal.
　本実施形態においては、交差部４１５を区画する基板露出領域４１１は、第２区画部２１の第２区画部第３端縁２３０と交差する２つの交差部４１５を有する。これにより、交差部４１５は、ｘ方向に沿った直線状である第２区画部第３端縁２３０の中間に位置している。 In the present embodiment, the substrate exposure region 411 that partitions the intersecting portion 415 has two intersecting portions 415 that intersect with the second partition portion third edge 230 of the second partition portion 21. Thereby, the crossing part 415 is located in the middle of the 2nd division part 3rd edge 230 which is linear form along ax direction.
　このような実施形態によっても、実際に発電に寄与する部分である光電変換層発電部３２の減少を抑制することができる。 Even in such an embodiment, it is possible to suppress a decrease in the photoelectric conversion layer power generation unit 32 that is a part that actually contributes to power generation.
　図２４４は、本発明の第２７実施形態に基づく有機薄膜太陽電池モジュールＡ２７および電子機器Ｂ２７を示している。同図を参照した説明においては、点Ｏを通る軸を中心とする円筒座標系を用いる。ｒ方向は径方向であり、θ方向は周方向である。本実施形態においては、第１導電層１が６つの第１区画部１１－１～６を有しており、第２導電層２が、６つの第２区画部２１－１～６を有している。また、６組の第１電極部１２、第２電極部２２および光電変換層発電部３２が、１０組の第１接続部１３、第２接続部２３および光電変換層接続部３３によって互いに直列に接続されており、外部電極部１４１および外部電極部１５１から電力が出力される。また、本実施形態においては、６組の第１電極部１２、第２電極部２２および光電変換層発電部３２が、ｚ方向視においてθ方向に沿った環状に配列されている。 FIG. 244 shows an organic thin-film solar cell module A27 and an electronic device B27 based on the twenty-seventh embodiment of the present invention. In the description with reference to the figure, a cylindrical coordinate system centered on an axis passing through the point O is used. The r direction is the radial direction, and the θ direction is the circumferential direction. In the present embodiment, the first conductive layer 1 has six first partition portions 11-1 to 11-6, and the second conductive layer 2 has six second partition portions 21-1 to 21-6. ing. In addition, six sets of the first electrode unit 12, the second electrode unit 22, and the photoelectric conversion layer power generation unit 32 are serially connected to each other by the ten sets of the first connection unit 13, the second connection unit 23, and the photoelectric conversion layer connection unit 33. Power is output from the external electrode portion 141 and the external electrode portion 151. In the present embodiment, the six sets of the first electrode unit 12, the second electrode unit 22, and the photoelectric conversion layer power generation unit 32 are arranged in an annular shape along the θ direction when viewed in the z direction.
　有機薄膜太陽電池モジュールＡ２６および電子機器Ｂ２６と同様に、ｚ方向視において６組の第１電極部１２、第２電極部２２および光電変換層発電部３２に囲まれた領域は、支持基板４１が存在しており、第１導電層１の一部が存在しうる。ただし、前記領域においては、支持基板４１のみが存在することが好ましい。このような電子機器Ｂ２７としては、たとえば液晶型腕時計が挙げられる。 Similarly to the organic thin film solar cell module A26 and the electronic device B26, the region surrounded by the six sets of the first electrode unit 12, the second electrode unit 22, and the photoelectric conversion layer power generation unit 32 in the z-direction view is the support substrate 41. There may be a part of the first conductive layer 1. However, it is preferable that only the support substrate 41 exists in the region. An example of such an electronic device B27 is a liquid crystal wristwatch.
　このような実施形態によっても、実際に発電に寄与する部分である光電変換層発電部３２の減少を抑制することができる。 Even in such an embodiment, it is possible to suppress a decrease in the photoelectric conversion layer power generation unit 32 that is a part that actually contributes to power generation.
　本発明に係る有機薄膜太陽電池モジュールおよび電子機器は、上述した実施形態に限定されるものではない。本発明に係る有機薄膜太陽電池モジュールおよび電子機器の各部の具体的な構成は、種々に設計変更自在である。 The organic thin film solar cell module and the electronic device according to the present invention are not limited to the above-described embodiments. The specific configuration of each part of the organic thin-film solar cell module and the electronic device according to the present invention can be varied in design in various ways.
　以下に、本発明の技術的特徴について付記する。 The technical features of the present invention will be described below.
　　〔付記１Ｇ〕
　透明な支持基板と、
　前記支持基板に積層された透明な第１導電層と、
　第２導電層と、
　前記第１導電層および前記第２導電層に挟まれた有機薄膜からなる光電変換層と、
を備え、
　前記第１導電層は、前記支持基板の一部が前記第１導電層から露出した基板露出領域を介して隣り合う２つの第１区画部を有しており、
　前記第２導電層は、前記基板露出領域の一部を挟んで隣り合う２つの第２区画部を有しており、
　前記隣り合う２つのうち一方の前記第１区画部は、前記基板露出領域を規定する第１区画部第１端縁を有し、
　前記隣り合う２つのうち他方の前記第１区画部は、前記基板露出領域を規定する第１区画部第２端縁を有し、
　前記隣り合う２つのうち一方の前記第２区画部は、平面視において前記隣り合う２つのうち一方の前記第１区画部に重なっているとともに、前記隣り合う２つのうち一方の前記第１区画部の前記第１区画部第１端縁に対して前記隣り合う２つのうち他方の前記第１区画部の前記第１区画部第２端縁とは反対側に位置する第２区画部第１端縁を有し、
　前記隣り合う２つのうち他方の前記第２区画部は、平面視において前記隣り合う２つのうち一方の前記第２区画部第１端縁と対向する第２区画部第２端縁を有し、
　前記光電変換層は、平面視において前記隣り合う２つのうち一方の前記第１区画部および前記隣り合う２つのうち他方の前記第２区画部の双方と重なる部分であって前記隣り合う２つのうち一方の前記第１区画部の前記第１区画部第１端縁のうち前記隣り合う２つのうち他方の前記第２区画部に重なる第１被覆部および前記隣り合う２つのうち他方の前記第２区画部の前記第２区画部第２端縁によって区画された光電変換層接続部に、厚さ方向に貫通する光電変換層貫通部を有し、
　前記基板露出領域は、前記隣り合う２つのうち他方の前記第２区画部の前記第２区画部第２端縁と交差する１以上の交差部を有する、有機薄膜太陽電池モジュール。
　　〔付記２Ｇ〕
　前記隣り合う２つのうち一方の前記第１区画部は、平面視において前記光電変換層接続部と重ならず且つ前記第２導電層と重なる第１電極部を有し、
　前記隣り合う２つのうち一方の前記第２区画部は、平面視において前記第１電極部と一致する第２電極部を有し、
　前記光電変換層は、平面視において前記第１電極部および前記第２電極部と一致する光電変換層発電部を有する、付記１Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記３Ｇ〕
　前記隣り合う２つのうち一方の前記第１区画部は、平面視において前記光電変換層接続部と一致する第１接続部を有し、
　前記隣り合う２つのうち他方の前記第２区画部は、平面視において前記光電変換層接続部と一致する第２接続部を有する、付記２Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記４Ｇ〕
　平面視における前記２つの第１区画部が並ぶ方向と交差する方向において、前記光電変換層接続部と前記光電変換層発電部の一部とが隣り合っている、付記３Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記５Ｇ〕
　平面視における前記２つの第１区画部が並ぶ方向と交差する方向において、前記光電変換層接続部の両側に前記光電変換層発電部が位置する、付記３Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記６Ｇ〕
　前記光電変換層貫通部は、平面視円形状である、付記３Ｇないし５Ｇのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記７Ｇ〕
　前記隣り合う２つのうち一方の前記第１区画部の前記第１接続部は、平面視において前記光電変換層貫通部に内包され且つ厚さ方向に貫通する第１貫通部を有する、付記３Ｇないし６Ｇのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記８Ｇ〕
　前記第１貫通部の内端縁は、平面視において前記光電変換層貫通部の内端縁から離間している、付記７Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記９Ｇ〕
　前記隣り合う２つのうち一方の前記第１区画部の前記第１接続部は、平面視における前記光電変換層貫通部に内包される領域において前記支持基板を覆っている、付記３Ｇないし６Ｇのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１０Ｇ〕
　前記隣り合う２つのうち他方の前記第２区画部は、前記第２区画部第２端縁に繋がり且つ前記隣り合う２つのうち一方の前記第２区画部から離間する側に延びる第２区画部第３端縁を有し、
　前記基板露出領域は、前記隣り合う２つのうち他方の前記第２区画部の前記第２区画部第２端縁と前記第２区画部第３端縁との一箇所ずつと交差する２つの前記交差部を有する、付記３Ｇないし９Ｇのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１１Ｇ〕
　前記基板露出領域は、前記隣り合う２つのうち他方の前記第２区画部の前記第２区画部第２端縁の二箇所と交差する２つの前記交差部を有する、付記３Ｇないし９Ｇのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１２Ｇ〕
　平面視において前記２つの第２区画部と重ならない領域において、前記隣り合う２つのうち一方の前記第１区画部の前記第１区画部第１端縁は、第１辺を有し、前記隣り合う２つのうち他方の前記第１区画部の前記第１区画部第２端縁は、前記第１辺と平行である第２辺を有する、付記３Ｇないし１１Ｇのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１３Ｇ〕
　前記第１辺および前記第２辺は、直線状である、付記１２Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記１４Ｇ〕
　前記隣り合う２つのうち一方の前記第２区画部の前記第２区画部第１端縁と前記隣り合う２つのうち他方の前記第２区画部の前記第２区画部第２端縁とは、互いに平行である、付記１２Ｇまたは１３Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記１５Ｇ〕
　前記隣り合う２つのうち一方の前記第２区画部の前記第２区画部第１端縁と前記隣り合う２つのうち他方の前記第２区画部の前記第２区画部第２端縁は、直線状である、付記１４Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記１６Ｇ〕
　前記隣り合う２つのうち一方の前記第１区画部の前記第１辺、前記隣り合う２つのうち他方の前記第１区画部の前記第２辺、前記隣り合う２つのうち一方の前記第２区画部の前記第２区画部第１端縁および前記隣り合う２つのうち他方の前記第２区画部の前記第２区画部第２端縁は、互いに平行である、付記１２Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記１７Ｇ〕
　前記第１辺、前記第２辺、前記第２区画部第１端縁および前記第２区画部第２端縁は、直線状である、付記１６Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記１８Ｇ〕
　隣り合う３以上の前記第１区画部および隣り合う３以上の前記第２区画部が、配列されている、付記３Ｇないし１７Ｇのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記１９Ｇ〕
　隣り合う３以上の前記第１区画部および隣り合う３以上の前記第２区画部が、一直線上に配列されている、付記１８Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記２０Ｇ〕
　隣り合う３以上の前記第１区画部および隣り合う３以上の前記第２区画部が、環状に配列されている、付記１９Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記２１Ｇ〕
　前記隣り合う３以上の第２区画部のうち２つの前記第２区画部の間にある前記第２区画部は、前記第２区画部第１端縁および前記第２区画部第２端縁と、前記第２区画部第１端縁および前記第２区画部第２端縁の両端同士を繋ぐ２つの第２区画部第３端縁と、を有する、付記１８Ｇないし２０Ｇのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２２Ｇ〕
　前記隣り合う３以上の第２区画部のうち２つの前記第２区画部の間にある前記第２区画部の前記第２区画部第１端縁と前記第２区画部第２端縁とは、互いに平行である、付記２１Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記２３Ｇ〕
　前記隣り合う３以上の第２区画部のうち２つの前記第２区画部の間にある前記第２区画部の前記２つの第２区画部第３端縁は、互いに平行である、付記２２Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記２４Ｇ〕
　前記隣り合う３以上の第２区画部のうち２つの前記第２区画部の間にある前記第２区画部の前記第２区画部第１端縁および前記第２区画部第２端縁と前記２つの第２区画部第３端縁とは、互いに直角である、付記２３Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記２５Ｇ〕
　前記第１導電層は、平面視において前記光電変換層接続部に一致する外部接続部と、当該外部接続部に繋がり且つ前記第２導電層および前記光電変換層から露出する外部電極部と、を有する第３区画部を有する、付記３Ｇないし２４Ｇのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２６Ｇ〕
　前記第１導電層は、ＩＴＯからなる、付記１Ｇないし２５Ｇのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２７Ｇ〕
　前記第２導電層は、金属からなる、付記１Ｇないし２６Ｇのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２８Ｇ〕
　前記第２導電層は、Ａｌからなる、付記１Ｇないし２７Ｇのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記２９Ｇ〕
　前記第２導電層を覆うパッシベーション層を備える、付記１Ｇないし２８Ｇのいずれかに記載の有機薄膜太陽電池モジュール。
　　〔付記３０Ｇ〕
　前記パッシベーション層は、ＳｉＮまたはＳｉＯＮからなる、付記２９Ｇに記載の有機薄膜太陽電池モジュール。
　　〔付記３１Ｇ〕
　付記１Ｇないし３０Ｇのいずれかに記載の有機薄膜太陽電池モジュールと、
　前記有機薄膜太陽電池モジュールからの給電によって駆動する駆動部と、
を備える、電子機器。 [Appendix 1G]
A transparent support substrate;
A transparent first conductive layer laminated on the support substrate;
A second conductive layer;
A photoelectric conversion layer comprising an organic thin film sandwiched between the first conductive layer and the second conductive layer;
With
The first conductive layer has two first partition portions adjacent to each other through a substrate exposed region in which a part of the support substrate is exposed from the first conductive layer.
The second conductive layer has two second partition portions adjacent to each other across a part of the substrate exposed region,
The first partition portion of one of the two adjacent ones has a first partition portion first edge that defines the substrate exposed region,
The other of the adjacent two first partition portions has a first partition portion second edge defining the substrate exposure region,
One of the two adjacent partitions overlaps the first partition of one of the two adjacent in a plan view, and one of the first partitions of the two adjacent 2nd partition part 1st end located on the opposite side to the 1st partition part 2nd edge of the other said 1st partition part among the two adjacent to said 1st partition part 1st edge Has an edge,
The other second partition portion of the two adjacent ones has a second partition portion second end edge facing the second partition portion first end edge of one of the two adjacent portions in plan view,
The photoelectric conversion layer is a portion that overlaps with both the first partition portion of the two adjacent ones and the second partition portion of the other of the two adjacent two portions in plan view. Of the two adjacent ones of the first partition part first edges of one of the first partition parts, the first covering part that overlaps the other second partition part and the other second of the two adjacent parts. The photoelectric conversion layer connecting portion partitioned by the second partition portion second edge of the partition portion has a photoelectric conversion layer penetration portion penetrating in the thickness direction,
The substrate-exposed region is an organic thin-film solar cell module having one or more intersecting portions intersecting the second partition portion second edge of the other second partition portion of the two adjacent ones.
[Appendix 2G]
The first partition portion of one of the two adjacent ones has a first electrode portion that does not overlap the photoelectric conversion layer connection portion and overlaps the second conductive layer in plan view,
One of the two adjacent sections has a second electrode portion that matches the first electrode portion in plan view,
The organic thin-film solar cell module according to appendix 1G, wherein the photoelectric conversion layer includes a photoelectric conversion layer power generation unit that matches the first electrode unit and the second electrode unit in plan view.
[Appendix 3G]
The first partition portion of one of the two adjacent ones has a first connection portion that matches the photoelectric conversion layer connection portion in plan view,
The organic thin film solar cell module according to attachment 2G, wherein the other second partition portion of the two adjacent ones has a second connection portion that coincides with the photoelectric conversion layer connection portion in plan view.
[Appendix 4G]
The organic thin film solar according to appendix 3G, wherein the photoelectric conversion layer connecting portion and a part of the photoelectric conversion layer power generation portion are adjacent to each other in a direction intersecting with a direction in which the two first partition portions are arranged in a plan view. Battery module.
[Appendix 5G]
The organic thin-film solar cell module according to appendix 3G, wherein the photoelectric conversion layer power generation unit is located on both sides of the photoelectric conversion layer connection unit in a direction intersecting with a direction in which the two first partition units are arranged in plan view.
[Appendix 6G]
The said photoelectric conversion layer penetration part is an organic thin-film solar cell module in any one of additional remarks 3G thru | or 5G whose planar view is circular shape.
[Appendix 7G]
1G thru | or 3G thru | or the 1st connection part of the said 1st division part of the said adjacent two has a 1st penetration part which is included in the said photoelectric converting layer penetration part and planarly penetrates in planar view. The organic thin-film solar cell module according to any one of 6G.
[Appendix 8G]
The organic thin-film solar cell module according to appendix 7G, wherein an inner end edge of the first through portion is separated from an inner end edge of the photoelectric conversion layer through portion in plan view.
[Appendix 9G]
Any one of Supplementary Notes 3G to 6G, wherein the first connection portion of the first partition portion of the two adjacent ones covers the support substrate in a region included in the photoelectric conversion layer penetrating portion in a plan view. Organic thin-film solar cell module according to crab.
[Appendix 10G]
The second partition part of the other of the two adjacent parts is connected to the second edge of the second partition part and extends to the side away from the second partition part of the two adjacent parts. Having a third edge;
The substrate exposure area includes two of the two adjacent ones of the second partitioning section and the second partitioning section third edge of the other second partitioning section that intersect each other. The organic thin-film solar cell module according to any one of Supplementary Notes 3G to 9G, having an intersection.
[Appendix 11G]
Any one of Supplementary Notes 3G to 9G, wherein the substrate exposed region has two intersecting portions that intersect two locations of the second partition portion second edge of the other second partition portion of the two adjacent ones. The organic thin film solar cell module according to 1.
[Appendix 12G]
In a region that does not overlap the two second partition portions in plan view, the first partition portion first edge of one of the two adjacent first partition portions has a first side, and the adjacent The organic thin film sun according to any one of appendices 3G to 11G, wherein the second edge of the first partition portion of the other of the two first partition portions has a second side parallel to the first side. Battery module.
[Appendix 13G]
The organic thin-film solar cell module according to Supplementary Note 12G, wherein the first side and the second side are linear.
[Appendix 14G]
Of the two adjacent two, the second partition part first edge of the second partition part and the second partition part second edge of the other of the two adjacent second parts, The organic thin-film solar cell module according to Supplementary Note 12G or 13G, which is parallel to each other.
[Appendix 15G]
Of the two adjacent two, the second partition part first edge of the second partition part and the second partition part second edge of the other two partition part of the two adjacent parts are straight lines. The organic thin-film solar cell module according to Supplementary Note 14G.
[Appendix 16G]
Of the two adjacent two, the first side of the first partition part, the second of the two adjacent ones, the second side of the first partition part, and the second part of the two adjacent ones. 2nd division part 1st edge of a part and the said 2nd division part 2nd edge of the said other 2nd division part among the said adjacent two are mutually parallel, The organic thin film sun of Additional remark 12G Battery module.
[Appendix 17G]
The said 1st edge | side, the said 2nd edge | side, the said 2nd division part 1st edge, and the said 2nd division part 2nd edge are organic thin-film solar cell modules of Additional remark 16G which are linear form.
[Appendix 18G]
The organic thin-film solar cell module according to any one of supplementary notes 3G to 17G, wherein three or more adjacent first partition portions and three or more adjacent second partition portions are arranged.
[Appendix 19G]
The organic thin-film solar cell module according to appendix 18G, wherein three or more adjacent first partition portions and three or more adjacent second partition portions are arranged in a straight line.
[Appendix 20G]
The organic thin-film solar cell module according to appendix 19G, wherein three or more adjacent first partition portions and three or more adjacent second partition portions are arranged in a ring shape.
[Appendix 21G]
Among the three or more adjacent second partition parts, the second partition part between two second partition parts is the second partition part first edge and the second partition part second edge. And the second partition section first end edge and the second partition section second end edge connecting both ends of the second partition section second end edge, and the second partition section third end edge. Organic thin-film solar cell module.
[Appendix 22G]
The second partition portion first edge and the second partition portion second edge of the second partition portion between two second partition portions among the three or more adjacent second partition portions. The organic thin-film solar cell module according to appendix 21G, which are parallel to each other.
[Appendix 23G]
In the supplementary note 22G, the two second partition part third edges of the second partition part between two second partition parts of the three or more adjacent second partition parts are parallel to each other. The organic thin film solar cell module described.
[Appendix 24G]
The second partition portion first edge and the second partition portion second edge of the second partition portion between two second partition portions among the three or more second partition portions adjacent to each other, and The organic thin-film solar cell module according to appendix 23G, wherein the two second partition portion third edges are perpendicular to each other.
[Appendix 25G]
The first conductive layer includes an external connection portion that coincides with the photoelectric conversion layer connection portion in plan view, and an external electrode portion that is connected to the external connection portion and exposed from the second conductive layer and the photoelectric conversion layer. The organic thin-film solar cell module according to any one of Supplementary Notes 3G to 24G, which includes a third partition portion.
[Appendix 26G]
The organic thin-film solar cell module according to any one of appendices 1G to 25G, wherein the first conductive layer is made of ITO.
[Appendix 27G]
The organic thin-film solar cell module according to any one of appendices 1G to 26G, wherein the second conductive layer is made of metal.
[Appendix 28G]
The organic thin-film solar cell module according to any one of appendices 1G to 27G, wherein the second conductive layer is made of Al.
[Appendix 29G]
The organic thin-film solar cell module according to any one of appendices 1G to 28G, comprising a passivation layer that covers the second conductive layer.
[Appendix 30G]
The organic thin-film solar cell module according to attachment 29G, wherein the passivation layer is made of SiN or SiON.
[Appendix 31G]
An organic thin-film solar cell module according to any one of Supplementary Notes 1G to 30G;
A drive unit driven by feeding from the organic thin film solar cell module;
An electronic device.

Claims (23)

  1. 　透明な支持基板と、
    　前記支持基板に積層された透明な第１導電層と、
    　第２導電層と、
    　前記第１導電層および前記第２導電層に挟まれた有機薄膜からなる光電変換層と、
    を備え、
    　前記第２導電層は、前記光電変換層よりも厚い、有機薄膜太陽電池モジュール。     A transparent support substrate;
    A transparent first conductive layer laminated on the support substrate;
    A second conductive layer;
    A photoelectric conversion layer comprising an organic thin film sandwiched between the first conductive layer and the second conductive layer;
    With
    The second conductive layer is an organic thin-film solar cell module that is thicker than the photoelectric conversion layer.
  2. 　前記第１導電層は、前記支持基板の一部が前記第１導電層から露出した基板露出領域を介して隣り合う２つの第１区画部を有しており、
    　前記第２導電層は、前記基板露出領域の一部を挟んで隣り合う２つの第２区画部を有しており、
    　前記光電変換層は、平面視において前記隣り合う２つのうち一方の前記第１区画部および前記隣り合う２つのうち他方の前記第２区画部の双方と重なる光電変換層接続部に、厚さ方向に貫通する光電変換層貫通部を有する、請求項１に記載の有機薄膜太陽電池モジュール。     The first conductive layer has two first partition portions adjacent to each other through a substrate exposed region in which a part of the support substrate is exposed from the first conductive layer.
    The second conductive layer has two second partition portions adjacent to each other across a part of the substrate exposed region,
    The photoelectric conversion layer has a thickness direction in a photoelectric conversion layer connecting portion that overlaps both the first partition portion of the two adjacent ones and the other second partition portion of the two adjacent portions in plan view. The organic thin-film solar cell module according to claim 1, further comprising a photoelectric conversion layer penetrating portion penetrating into the organic thin film.
  3. 　前記光電変換層は、平面視において前記光電変換層貫通部を囲む突起を有し、
    　前記突起は、前記第２導電層に覆われている、請求項２に記載の有機薄膜太陽電池モジュール。     The photoelectric conversion layer has a protrusion that surrounds the photoelectric conversion layer penetrating portion in plan view,
    The organic thin film solar cell module according to claim 2, wherein the protrusion is covered with the second conductive layer.
  4. 　前記隣り合う２つのうち一方の前記第１区画部は、平面視において前記光電変換層接続部と重ならず且つ前記第２導電層と重なる第１電極部を有し、
    　前記隣り合う２つのうち一方の前記第２区画部は、平面視において前記第１電極部と一致する第２電極部を有し、
    　前記光電変換層は、平面視において前記第１電極部および前記第２電極部と一致する光電変換層発電部を有する、請求項２または３に記載の有機薄膜太陽電池モジュール。     The first partition portion of one of the two adjacent ones has a first electrode portion that does not overlap the photoelectric conversion layer connection portion and overlaps the second conductive layer in plan view,
    One of the two adjacent sections has a second electrode portion that matches the first electrode portion in plan view,
    4. The organic thin-film solar cell module according to claim 2, wherein the photoelectric conversion layer has a photoelectric conversion layer power generation unit that coincides with the first electrode unit and the second electrode unit in plan view.
  5. 　前記隣り合う２つのうち一方の前記第１区画部は、平面視において前記光電変換層接続部と一致する第１接続部を有し、
    　前記隣り合う２つのうち他方の前記第２区画部は、平面視において前記光電変換層接続部と一致する第２接続部を有する、請求項４に記載の有機薄膜太陽電池モジュール。     The first partition portion of one of the two adjacent ones has a first connection portion that matches the photoelectric conversion layer connection portion in plan view,
    5. The organic thin-film solar cell module according to claim 4, wherein the other second partition portion of the two adjacent ones has a second connection portion that coincides with the photoelectric conversion layer connection portion in a plan view.
  6. 　前記光電変換層貫通部は、平面視円形状である、請求項５に記載の有機薄膜太陽電池モジュール。 The organic thin-film solar cell module according to claim 5, wherein the photoelectric conversion layer penetrating portion has a circular shape in a plan view.
  7. 　前記隣り合う２つのうち一方の前記第１区画部の前記第１接続部は、平面視において前記光電変換層貫通部に内包され且つ厚さ方向に貫通する第１貫通部を有する、請求項６に記載の有機薄膜太陽電池モジュール。 The first connection part of the first partition part of one of the two adjacent parts has a first penetration part that is included in the photoelectric conversion layer penetration part and penetrates in the thickness direction in plan view. The organic thin film solar cell module according to 1.
  8. 　前記第１貫通部の内端縁は、平面視において前記光電変換層貫通部の内端縁から離間している、請求項７に記載の有機薄膜太陽電池モジュール。 The organic thin-film solar cell module according to claim 7, wherein an inner end edge of the first penetrating portion is separated from an inner end edge of the photoelectric conversion layer penetrating portion in a plan view.
  9. 　前記隣り合う２つのうち一方の前記第１区画部の前記第１接続部は、平面視における前記光電変換層貫通部に内包される領域において前記支持基板を覆っている、請求項５ないし８のいずれかに記載の有機薄膜太陽電池モジュール。 The first connection part of the first partition part of one of the two adjacent parts covers the support substrate in a region included in the photoelectric conversion layer penetrating part in plan view. The organic thin-film solar cell module in any one.
  10. 　前記第１導電層は、ＩＴＯからなる、請求項１ないし９のいずれかに記載の有機薄膜太陽電池モジュール。 The organic thin-film solar cell module according to any one of claims 1 to 9, wherein the first conductive layer is made of ITO.
  11. 　前記第２導電層は、金属からなる、請求項１ないし１０のいずれかに記載の有機薄膜太陽電池モジュール。 The organic thin-film solar cell module according to any one of claims 1 to 10, wherein the second conductive layer is made of metal.
  12. 　前記第２導電層は、Ａｌからなる、請求項１１に記載の有機薄膜太陽電池モジュール。 The organic thin-film solar cell module according to claim 11, wherein the second conductive layer is made of Al.
  13. 　前記第２導電層を覆うパッシベーション層を備える、請求項１ないし１２のいずれかに記載の有機薄膜太陽電池モジュール。 The organic thin-film solar cell module according to any one of claims 1 to 12, further comprising a passivation layer that covers the second conductive layer.
  14. 　前記パッシベーション層は、ＳｉＮまたはＳｉＯＮからなる、請求項１３に記載の有機薄膜太陽電池モジュール。 The organic thin-film solar cell module according to claim 13, wherein the passivation layer is made of SiN or SiON.
  15. 　請求項１ないし１４のいずれかに記載の有機薄膜太陽電池モジュールと、
    　前記有機薄膜太陽電池モジュールからの給電によって駆動する駆動部と、
    を備える、電子機器。     An organic thin film solar cell module according to any one of claims 1 to 14,
    A drive unit driven by feeding from the organic thin film solar cell module;
    An electronic device.
  16. 　透明な支持基板に透明な第１導電層を積層する工程と、
    　前記第１導電層に有機薄膜からなる光電変換層を積層する工程と、
    　前記光電変換層に第２導電層を積層する工程と、を備え、
    　前記第２導電層を積層する工程においては、前記光電変換層よりも厚く前記第２導電層を積層する、有機薄膜太陽電池モジュールの製造方法。     Laminating a transparent first conductive layer on a transparent support substrate;
    Laminating a photoelectric conversion layer made of an organic thin film on the first conductive layer;
    Laminating a second conductive layer on the photoelectric conversion layer,
    In the step of laminating the second conductive layer, the method for producing an organic thin-film solar cell module, wherein the second conductive layer is laminated thicker than the photoelectric conversion layer.
  17. 　前記第２導電層を積層する工程においては、蒸着法によって金属を積層させる、請求項１６に記載の有機薄膜太陽電池モジュールの製造方法。 The method for producing an organic thin-film solar cell module according to claim 16, wherein in the step of laminating the second conductive layer, a metal is laminated by a vapor deposition method.
  18. 　前記光電変換層を積層する工程においては、前記光電変換層を貫通する光電変換層貫通部を形成し、
    　前記第２導電層を積層する工程においては、前記第２導電層によって前記光電変換層貫通部を覆う、請求項１６または１７に記載の有機薄膜太陽電池モジュールの製造方法。     In the step of laminating the photoelectric conversion layer, a photoelectric conversion layer penetrating portion that penetrates the photoelectric conversion layer is formed,
    The method for producing an organic thin-film solar cell module according to claim 16 or 17, wherein, in the step of laminating the second conductive layer, the photoelectric conversion layer penetrating portion is covered with the second conductive layer.
  19. 　前記光電変換層を積層する工程においては、前記光電変換層貫通部とともに平面視において前記光電変換層貫通部に内包され且つ厚さ方向に貫通する第１貫通部を前記第１導電層に形成する、請求項１８に記載の有機薄膜太陽電池モジュールの製造方法。 In the step of laminating the photoelectric conversion layer, a first through portion that is included in the photoelectric conversion layer penetration portion and penetrates in the thickness direction in plan view together with the photoelectric conversion layer penetration portion is formed in the first conductive layer. The manufacturing method of the organic thin-film solar cell module of Claim 18.
  20. 　前記光電変換層貫通部の形成は、ＩＲレーザーによって行う、請求項１９に記載の有機薄膜太陽電池モジュールの製造方法。 The method for manufacturing an organic thin-film solar cell module according to claim 19, wherein the formation of the photoelectric conversion layer penetrating portion is performed by an IR laser.
  21. 　前記第１導電層は、ＩＴＯからなる、請求項１６ないし２０のいずれかに記載の有機薄膜太陽電池モジュールの製造方法。 21. The method of manufacturing an organic thin film solar cell module according to claim 16, wherein the first conductive layer is made of ITO.
  22. 　前記第２導電層は、金属からなる、請求項１６ないし２１のいずれかに記載の有機薄膜太陽電池モジュールの製造方法。 The method for manufacturing an organic thin-film solar cell module according to any one of claims 16 to 21, wherein the second conductive layer is made of metal.
  23. 　前記第２導電層は、Ａｌからなる、請求項２２に記載の有機薄膜太陽電池モジュールの製造方法。 The method for manufacturing an organic thin-film solar cell module according to claim 22, wherein the second conductive layer is made of Al.
PCT/JP2016/064882 2015-05-19 2016-05-19 Organic thin film solar cell module, electronic device and method for manufacturing organic thin film solar cell module WO2016186166A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/575,248 US20180138326A1 (en) 2015-05-19 2016-05-19 Organic thin film solar cell module, electronic device and method for manufacturing organic thin film solar cell module

Applications Claiming Priority (16)

Application Number Priority Date Filing Date Title
JP2015102193 2015-05-19
JP2015-102202 2015-05-19
JP2015-102193 2015-05-19
JP2015102202 2015-05-19
JP2015152377 2015-07-31
JP2015-152377 2015-07-31
JP2016031716 2016-02-23
JP2016-031716 2016-02-23
JP2016041982 2016-03-04
JP2016-041982 2016-03-04
JP2016-047834 2016-03-11
JP2016047834 2016-03-11
JP2016049770 2016-03-14
JP2016-049770 2016-03-14
JP2016-099721 2016-05-18
JP2016099721A JP6769739B2 (en) 2015-05-19 2016-05-18 Manufacturing method of organic thin-film solar cell module, electronic equipment and organic thin-film solar cell module

Publications (1)

Publication Number Publication Date
WO2016186166A1 true WO2016186166A1 (en) 2016-11-24

Family

ID=57320288

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/064882 WO2016186166A1 (en) 2015-05-19 2016-05-19 Organic thin film solar cell module, electronic device and method for manufacturing organic thin film solar cell module

Country Status (1)

Country Link
WO (1) WO2016186166A1 (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009506554A (en) * 2005-08-26 2009-02-12 ザ トラスティーズ オブ プリンストン ユニヴァシティ Encapsulated electrodes for organic devices
JP2011108722A (en) * 2009-11-13 2011-06-02 Konica Minolta Holdings Inc Organic solar cell device and method of manufacturing the same
JP2011114004A (en) * 2009-11-24 2011-06-09 Panasonic Electric Works Co Ltd Organic solar cell
JP2011142217A (en) * 2010-01-07 2011-07-21 Dainippon Printing Co Ltd Organic thin-film solar cell
JP2013016668A (en) * 2011-07-05 2013-01-24 Fujifilm Corp Manufacturing method of solar cell
WO2014046539A1 (en) * 2012-09-18 2014-03-27 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Electro-optical device stack
WO2016031294A1 (en) * 2014-08-29 2016-03-03 ローム株式会社 Organic thin-film solar cell module, method for manufacturing same, and electronic device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009506554A (en) * 2005-08-26 2009-02-12 ザ トラスティーズ オブ プリンストン ユニヴァシティ Encapsulated electrodes for organic devices
JP2011108722A (en) * 2009-11-13 2011-06-02 Konica Minolta Holdings Inc Organic solar cell device and method of manufacturing the same
JP2011114004A (en) * 2009-11-24 2011-06-09 Panasonic Electric Works Co Ltd Organic solar cell
JP2011142217A (en) * 2010-01-07 2011-07-21 Dainippon Printing Co Ltd Organic thin-film solar cell
JP2013016668A (en) * 2011-07-05 2013-01-24 Fujifilm Corp Manufacturing method of solar cell
WO2014046539A1 (en) * 2012-09-18 2014-03-27 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Electro-optical device stack
WO2016031294A1 (en) * 2014-08-29 2016-03-03 ローム株式会社 Organic thin-film solar cell module, method for manufacturing same, and electronic device

Similar Documents

Publication Publication Date Title
US11811006B2 (en) Display panel and display device
CN109920828B (en) OLED substrate and preparation method thereof
RU2010133952A (en) DEVICE HAVING A GENERATING BLACK MASK, AND METHOD FOR ITS MANUFACTURE
BR112015007125B1 (en) Apparatus and method for providing photovoltaic functionality
JP2017168798A (en) Organic thin-film solar cell module, electronic apparatus, and method of manufacturing organic thin-film solar cell module
CN105977328A (en) Solar cell module
CN111625119B (en) Touch screen and display device
WO2016186166A1 (en) Organic thin film solar cell module, electronic device and method for manufacturing organic thin film solar cell module
JP2010211971A (en) Dye-sensitized solar cell and wrist watch equipped with the same
KR20130023027A (en) Photoelectric conversion module and the manufacturing method for the same
KR101219245B1 (en) Photoelectric conversion device and method of preparing the same
JP2009238583A (en) Dye-sensitized solar cell
JP6384801B2 (en) Solar cell module
US11309365B2 (en) Optical fingerprint sensor and display module
US20120085393A1 (en) Solar cell module and method of manufacturing the same
JP2017220481A (en) Organic thin film solar cell module and electronic apparatus
EP2535944A1 (en) Solar cell string, solar cell module, and solar cell
JP6467727B2 (en) Manufacturing method of solar cell module
JPS5994880A (en) Solar battery
JP2013109953A (en) Flexible solar cell element module
JP2013026378A (en) Solar cell, solar cell module and manufacturing method therefor
JP6356476B2 (en) Solar cell mounting substrate and solar cell module
KR20140024505A (en) Dye-sensitized solar cell with serial structure for continuous process
JP5817461B2 (en) Flexible solar cell module
JP2016219549A (en) Solar battery cell, solar battery module and method of manufacturing solar battery cell

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16796559

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 15575248

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16796559

Country of ref document: EP

Kind code of ref document: A1