WO2016031563A1 - Socパターン上でのパターン反転のための被覆用組成物 - Google Patents
Socパターン上でのパターン反転のための被覆用組成物 Download PDFInfo
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- WO2016031563A1 WO2016031563A1 PCT/JP2015/072770 JP2015072770W WO2016031563A1 WO 2016031563 A1 WO2016031563 A1 WO 2016031563A1 JP 2015072770 W JP2015072770 W JP 2015072770W WO 2016031563 A1 WO2016031563 A1 WO 2016031563A1
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- WIPO (PCT)
- Prior art keywords
- group
- methyl
- film
- underlayer film
- organic underlayer
- Prior art date
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- 239000008199 coating composition Substances 0.000 title abstract description 4
- -1 polysiloxane Polymers 0.000 claims abstract description 429
- 239000000203 mixture Substances 0.000 claims abstract description 140
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 129
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 50
- 239000010703 silicon Substances 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 238000000576 coating method Methods 0.000 claims description 98
- 239000011248 coating agent Substances 0.000 claims description 97
- 229910000077 silane Inorganic materials 0.000 claims description 50
- 239000002253 acid Substances 0.000 claims description 47
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 43
- 150000004756 silanes Chemical class 0.000 claims description 36
- 150000001875 compounds Chemical class 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 29
- 125000000217 alkyl group Chemical group 0.000 claims description 28
- 125000003118 aryl group Chemical group 0.000 claims description 28
- 239000003054 catalyst Substances 0.000 claims description 28
- 230000007062 hydrolysis Effects 0.000 claims description 28
- 238000006460 hydrolysis reaction Methods 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 125000005843 halogen group Chemical group 0.000 claims description 11
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 11
- 125000003545 alkoxy group Chemical group 0.000 claims description 10
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 8
- 125000000962 organic group Chemical group 0.000 claims description 8
- 229910018540 Si C Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 125000003342 alkenyl group Chemical group 0.000 claims description 5
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 claims description 4
- 125000004423 acyloxy group Chemical group 0.000 claims description 4
- 125000004171 alkoxy aryl group Chemical group 0.000 claims description 4
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 4
- 125000003700 epoxy group Chemical group 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 4
- 125000004184 methoxymethyl group Chemical group [H]C([H])([H])OC([H])([H])* 0.000 claims description 4
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 4
- 239000011342 resin composition Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 137
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 79
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 56
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 53
- 239000000243 solution Substances 0.000 description 46
- 238000006243 chemical reaction Methods 0.000 description 41
- 125000005595 acetylacetonate group Chemical group 0.000 description 40
- 229920002120 photoresistant polymer Polymers 0.000 description 40
- 239000007787 solid Substances 0.000 description 38
- 239000007795 chemical reaction product Substances 0.000 description 26
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 22
- 229910052719 titanium Inorganic materials 0.000 description 22
- 239000010936 titanium Substances 0.000 description 22
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 21
- 229910052726 zirconium Inorganic materials 0.000 description 21
- 125000004432 carbon atom Chemical group C* 0.000 description 20
- 150000001450 anions Chemical class 0.000 description 19
- 239000000460 chlorine Substances 0.000 description 19
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 19
- 239000007789 gas Substances 0.000 description 18
- 239000002904 solvent Substances 0.000 description 18
- 239000003513 alkali Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 17
- 239000007983 Tris buffer Substances 0.000 description 16
- 238000004090 dissolution Methods 0.000 description 16
- 239000000047 product Substances 0.000 description 16
- 238000003786 synthesis reaction Methods 0.000 description 16
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 15
- 239000010410 layer Substances 0.000 description 15
- 239000003921 oil Substances 0.000 description 14
- 239000011148 porous material Substances 0.000 description 14
- 239000011230 binding agent Substances 0.000 description 13
- 229910052801 chlorine Inorganic materials 0.000 description 13
- 238000001816 cooling Methods 0.000 description 13
- 229910052736 halogen Inorganic materials 0.000 description 13
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 12
- 238000001312 dry etching Methods 0.000 description 12
- 229920000642 polymer Polymers 0.000 description 12
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 11
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 10
- 150000004820 halides Chemical class 0.000 description 10
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 9
- 229910052794 bromium Inorganic materials 0.000 description 9
- 229910052740 iodine Inorganic materials 0.000 description 9
- 239000011630 iodine Substances 0.000 description 9
- 239000004094 surface-active agent Substances 0.000 description 9
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 8
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 8
- 150000007942 carboxylates Chemical class 0.000 description 8
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 8
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 8
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 8
- 150000003871 sulfonates Chemical class 0.000 description 8
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 7
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000004380 ashing Methods 0.000 description 6
- GZUXJHMPEANEGY-UHFFFAOYSA-N bromomethane Chemical compound BrC GZUXJHMPEANEGY-UHFFFAOYSA-N 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 6
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 6
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 6
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 6
- 150000007524 organic acids Chemical class 0.000 description 6
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 5
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 5
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 5
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 5
- HTZCNXWZYVXIMZ-UHFFFAOYSA-M benzyl(triethyl)azanium;chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC1=CC=CC=C1 HTZCNXWZYVXIMZ-UHFFFAOYSA-M 0.000 description 5
- 239000013522 chelant Substances 0.000 description 5
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- 230000000052 comparative effect Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 229940093499 ethyl acetate Drugs 0.000 description 5
- 235000019439 ethyl acetate Nutrition 0.000 description 5
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 5
- 229940093858 ethyl acetoacetate Drugs 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 5
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 5
- 239000012953 triphenylsulfonium Substances 0.000 description 5
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 description 4
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 4
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 4
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 4
- NMJJFJNHVMGPGM-UHFFFAOYSA-N butyl formate Chemical compound CCCCOC=O NMJJFJNHVMGPGM-UHFFFAOYSA-N 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 4
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 4
- 235000019253 formic acid Nutrition 0.000 description 4
- 230000003301 hydrolyzing effect Effects 0.000 description 4
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000011976 maleic acid Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- TZIHFWKZFHZASV-UHFFFAOYSA-N methyl formate Chemical compound COC=O TZIHFWKZFHZASV-UHFFFAOYSA-N 0.000 description 4
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 4
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 4
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 4
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- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 3
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 3
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 3
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 3
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 3
- OMSXLDKDBUFAFW-UHFFFAOYSA-M C(C)CC(CC(=O)[O-])=O.[Ti+] Chemical compound C(C)CC(CC(=O)[O-])=O.[Ti+] OMSXLDKDBUFAFW-UHFFFAOYSA-M 0.000 description 3
- WWZKQHOCKIZLMA-UHFFFAOYSA-N Caprylic acid Natural products CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 3
- QMMFVYPAHWMCMS-UHFFFAOYSA-N Dimethyl sulfide Chemical compound CSC QMMFVYPAHWMCMS-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 3
- 150000001350 alkyl halides Chemical class 0.000 description 3
- 150000001502 aryl halides Chemical class 0.000 description 3
- AGEZXYOZHKGVCM-UHFFFAOYSA-N benzyl bromide Chemical compound BrCC1=CC=CC=C1 AGEZXYOZHKGVCM-UHFFFAOYSA-N 0.000 description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 3
- 239000007810 chemical reaction solvent Substances 0.000 description 3
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 239000007859 condensation product Substances 0.000 description 3
- 239000003431 cross linking reagent Substances 0.000 description 3
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 3
- CKSRFHWWBKRUKA-UHFFFAOYSA-N ethyl 2-ethoxyacetate Chemical compound CCOCC(=O)OCC CKSRFHWWBKRUKA-UHFFFAOYSA-N 0.000 description 3
- IJUHLFUALMUWOM-UHFFFAOYSA-N ethyl 3-methoxypropanoate Chemical compound CCOC(=O)CCOC IJUHLFUALMUWOM-UHFFFAOYSA-N 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 229940116333 ethyl lactate Drugs 0.000 description 3
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 3
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Images
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Definitions
- the present invention relates to the production of an electronic device, and relates to a coating composition for pattern reversal for forming a fine pattern.
- a composition for forming a resist underlayer film containing a polymer having a unit structure of hydroxyacrylamide has been disclosed (see Patent Document 2).
- An antireflection film-forming composition containing a polymer containing a unit structure of hydroxyalkylene methacrylamide and a unit structure of aromatic alkylene methacrylate is disclosed (see Patent Document 3).
- a patterning method for reversing the pattern with the miniaturization of the pattern is disclosed (see Patent Documents 1 and 2).
- the present invention provides a resin composition for pattern reversal that can be satisfactorily embedded between patterns in a stepped substrate formed on a substrate to be processed, and that forms a flat film.
- the coating polysiloxane composition is used in a pattern reversal method on an SOC pattern comprising a step (8) of reversing a pattern by etching a layer film, wherein the coating polysiloxane composition contains 2 to 3 hydro
- the hydrolyzable silane has the formula (1): (In Formula (1), R 1 represents an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, or an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, or a cyano group.
- R 2 represents an alkoxy group, an acyloxy group, or a halogen group
- a represents an integer of 0 to 2.
- Polysiloxane composition for coating according to the first aspect As a third aspect, the hydrolytic condensation of hydrolyzable silane containing 100 mol% of hydrolyzable silane represented by the formula (1) (wherein a is 1 to 2) in all silanes.
- a polysiloxane composition for coating according to the second aspect comprising a product and a crosslinkable compound having 2 to 6 methoxymethyl groups
- R 1 is a phenyl group which may be substituted with a methyl group, a halogen group or an alkoxy group
- the coating polysiloxane composition according to the second aspect or the third aspect As a fifth aspect, the polysiloxane composition for coating according to any one of the first to fourth aspects, in which hydrolysis of the hydrolyzable silane is performed using an acid or a base as a hydrolysis catalyst,
- a step (1) of forming an organic underlayer film on a semiconductor substrate a step (2) of forming a silicon hard mask by applying and baking a silicon hard mask forming composition thereon, Applying a resist composition on the silicon hard mask to form a resist film (3), exposing the resist film, developing the resist film after exposure to obtain a resist pattern (4), and resist pattern (5) etching the silicon hard mask by etching, etching the organic underlayer film with the patterned silicon hard mask, Step (6) of forming a film, the coating polysiloxane composition according to any one of the first aspect to the sixth aspect is applied on the patterned organic underlayer film, and the pattern of the organic underlayer film
- a method of manufacturing a semiconductor device comprising: a step (7) in which a space is embedded with the polysiloxane composition, and an upper surface of the organic underlayer film is exposed by etchback; and a step (8) in which the organic underlayer film is etched to reverse a pattern
- the coating polysiloxane composition of the present invention is coated on the patterned organic underlayer film without mixing with the patterned organic underlayer film formed on the substrate to be processed. It is possible to embed (fill) well between the patterns.
- the coating polysiloxane composition is cured to form a polysiloxane composition film, and a flat surface can be formed later by etching back by etching (gas etching). Further, since the organic underlayer film can be removed by ashing (ashing treatment), the pattern of the organic underlayer film can be reversed to the pattern of the polysiloxane composition film formed by filling the coating polysiloxane composition. .
- the substrate to be processed can be processed by these reversal patterns.
- the adhesion between the target substrate to be processed and the film coated thereon is improved by the coating polysiloxane composition rather than the organic underlayer film, such pattern inversion is performed.
- the substrate to be processed can be processed with a film having high adhesion.
- a method of embedding (filling) a polysiloxane composition between photoresist patterns and then inverting the polysiloxane pattern by etching with an oxygen-based gas has been performed.
- the resist film is thin, a high aspect ratio inversion pattern cannot be obtained.
- the pattern can be reversed using a stepped substrate having a larger aspect ratio than the photoresist pattern on the substrate to be processed, and as a result, a reversed pattern having a high aspect ratio can be obtained.
- an organic underlayer film having a large aspect ratio can be embedded between patterns, coating with a specific polysiloxane composition is effective.
- a method of embedding (filling) a polysiloxane composition between photoresist patterns is difficult to perform ashing or the like because an organic film exists in the lower layer, and may be performed by gas etching. Many.
- the organic underlayer film on the substrate to be processed or on the oxide film can be reversed with the polysiloxane composition, it is cured after embedding the polysiloxane composition. The pattern can be easily reversed by the ashing process.
- FIG. 1 shows a method of manufacturing a semiconductor device including a pattern reversal process using the coating polysiloxane composition of the present invention.
- FIG. 2 shows a cross-sectional view in which the coating polysiloxane composition of the present invention is coated on a stepped substrate formed of SiO 2 in order to evaluate the coating performance.
- the present invention includes a step (1) of forming an organic underlayer film on a semiconductor substrate, a step (2) of forming a silicon hard mask by applying and baking a silicon hard mask forming composition on the silicon hard mask, Step (3) of applying a resist composition to form a resist film, exposing the resist film, developing the resist film after exposure to obtain a resist pattern (4), and etching a silicon hard mask with the resist pattern Step (5), etching the organic underlayer film with a patterned silicon hard mask to form a patterned organic underlayer film (6), coating polysiloxane composition on the patterned organic underlayer film Applying an object and exposing the upper surface of the organic underlayer film by etch back (7); etching or etching the organic underlayer film;
- the coating polysiloxane composition is used in a pattern inversion method on the SOC pattern comprising the step (8) of ashing to invert the pattern, and the coating polysiloxane composition is hydrolyzed having 2 to 3 hydrolyzable groups in all si
- the coating polysiloxane composition is applied on the patterned organic underlayer film, and at that time, the silicon hard mask may partially remain on the upper surface of the organic underlayer film. . This is because the polysiloxane for coating later exposes the upper surface of the organic underlayer film by etch back, so that the polysiloxane for coating and the silicon hard mask are simultaneously removed by etch back.
- the hydrolyzable silane is a hydrolyzable silane represented by the above formula (1)
- 30 is a hydrolyzable silane in which a is 1 to 2 in all silanes.
- a hydrolyzable silane in which a is 0 in a proportion of 0 to 70 mol%.
- R 1 represents an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, or an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, or a cyano group.
- An organic group having a group and bonded to a silicon atom by a Si—C bond R 2 represents an alkoxy group, an acyloxy group, or a halogen group, and a represents an integer of 0 to 2.
- the coating polysiloxane composition of the present invention contains a hydrolyzable condensate of hydrolyzable silane as shown by the formula (1) and a solvent.
- a hydrolyzable condensate of hydrolyzable silane as shown by the formula (1) and a solvent.
- acid, water, alcohol, curing catalyst, acid generator, other organic polymer, light-absorbing compound, surfactant and the like can be included.
- the solid content in the coating polysiloxane composition of the present invention is, for example, 0.1 to 50% by mass, or 0.1 to 30% by mass, and 0.1 to 25% by mass.
- the solid content is obtained by removing the solvent component from all components of the coating polysiloxane composition.
- the ratio of the hydrolyzable silane, its hydrolyzate, and its hydrolysis condensate in the solid content is 20% by mass or more, for example, 50 to 100% by mass, 60 to 99% by mass, 70 to 99% by mass. It is.
- hydrolyzable silane, its hydrolyzate, and its hydrolysis condensate can also be used as a mixture thereof. It can be used as a condensate obtained by hydrolyzing a hydrolyzable silane and condensing the obtained hydrolyzate.
- a hydrolysis-condensation product a partial hydrolysis product or a silane compound in which hydrolysis is not completely completed are mixed with the hydrolysis-condensation product, and the mixture can also be used.
- This condensate is a polymer having a polysiloxane structure.
- the alkyl group is a linear or branched alkyl group having 1 to 10 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, s-butyl, t-butyl, n-pentyl, 1-methyl-n-butyl, 2-methyl-n-butyl, 3-methyl-n-butyl, 1,1-dimethyl-n- Propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, n-hexyl, 1-methyl-n-pentyl group, 2-methyl -N-pentyl group, 3-methyl-n-pentyl group, 4-methyl-n-pentyl group, 1,1-dimethyl-n-butyl group, 1,2-dimethyl-n
- Cyclic alkyl groups can also be used.
- cyclic alkyl group having 1 to 10 carbon atoms cyclopropyl group, cyclobutyl group, 1-methyl-cyclopropyl group, 2-methyl-cyclopropyl group, cyclopentyl group, 1 -Methyl-cyclobutyl group, 2-methyl-cyclobutyl group, 3-methyl-cyclobutyl group, 1,2-dimethyl-cyclopropyl group, 2,3-dimethyl-cyclopropyl group, 1-ethyl-cyclopropyl group, 2- Ethyl-cyclopropyl group, cyclohexyl group, 1-methyl-cyclopentyl group, 2-methyl-cyclopentyl group, 3-methyl-cyclopentyl group, 1-ethyl-cyclobutyl group, 2-ethyl-cyclobutyl group, 3-ethyl-cyclobutyl group 1,2-dimethyl-cyclobutyl group,
- the alkenyl group is an alkenyl group having 2 to 10 carbon atoms and includes an ethenyl group, 1-propenyl group, 2-propenyl group, 1-methyl-1-ethenyl group, 1-butenyl group, 2-butenyl group, 3- Butenyl group, 2-methyl-1-propenyl group, 2-methyl-2-propenyl group, 1-ethylethenyl group, 1-methyl-1-propenyl group, 1-methyl-2-propenyl group, 1-pentenyl group, 2 -Pentenyl group, 3-pentenyl group, 4-pentenyl group, 1-n-propylethenyl group, 1-methyl-1-butenyl group, 1-methyl-2-butenyl group, 1-methyl-3-butenyl group, 2-ethyl-2-propenyl group, 2-methyl-1-butenyl group, 2-methyl-2-butenyl group, 2-methyl-3-butenyl group, 3-methyl-1-butenyl group, 3-
- aryl group examples include aryl groups having 6 to 20 carbon atoms, such as a phenyl group, o-methylphenyl group, m-methylphenyl group, p-methylphenyl group, o-chlorophenyl group, and m-chlorophenyl group.
- Examples of the organic group having an epoxy group include glycidoxymethyl, glycidoxyethyl, glycidoxypropyl, glycidoxybutyl, and epoxycyclohexyl.
- Examples of the organic group having an acryloyl group include acryloylmethyl, acryloylethyl, acryloylpropyl, and the like.
- Examples of the organic group having a methacryloyl group include methacryloylmethyl, methacryloylethyl, and methacryloylpropyl.
- Examples of the organic group having a mercapto group include ethyl mercapto, butyl mercapto, hexyl mercapto, and octyl mercapto.
- Examples of the organic group having a cyano group include cyanoethyl and cyanopropyl.
- alkoxy group examples include an alkoxy group having a linear, branched, or cyclic alkyl portion having 1 to 20 carbon atoms, such as a methoxy group, an ethoxy group, an n-propoxy group, an i-propoxy group, and an n-butoxy group.
- acyloxy group examples include those having 2 to 20 carbon atoms, such as a methylcarbonyloxy group, an ethylcarbonyloxy group, an n-propylcarbonyloxy group, an i-propylcarbonyloxy group, and an n-butylcarbonyloxy group.
- halogen group examples include fluorine, chlorine, bromine and iodine.
- groups described above also apply to the alkyl group, aryl group, alkoxy group, and halogen group portion in the halogenated alkyl group, halogenated aryl group, and alkoxyaryl group.
- R 1 is preferably a methyl group, or a phenyl group which may be substituted with a halogen group or an alkoxy group.
- hydrolysis of hydrolyzable silane containing hydrolyzable silane represented by formula (1) (wherein a is 1 to 2) in a proportion of 100 mol% in all silanes.
- a coating polysiloxane composition containing a condensate and a crosslinkable compound having 2 to 6 methoxymethyl groups can be used.
- the crosslinkable compound having 2 to 6 methoxymethyl groups include melamine type, substituted urea type, or polymer type thereof.
- a cross-linking agent having a cross-linking substituent, methoxymethylated glycoluril, butoxymethylated glycoluril, methoxymethylated melamine, butoxymethylated melamine, methoxymethylated benzoguanamine, butoxymethylated benzoguanamine, methoxymethylated urea , Butoxymethylated urea, methoxymethylated thiourea, or methoxymethylated thiourea.
- the condensate of these compounds can also be used.
- the amount of the crosslinking agent to be added varies depending on the coating solvent used, the base substrate used, the required solution viscosity, the required film shape, etc., but is 0.001 to 80% by mass with respect to the total solid content, preferably The amount is 0.01 to 50% by mass, more preferably 0.05 to 40% by mass.
- p-toluenesulfonic acid as a catalyst for promoting the crosslinking reaction, p-toluenesulfonic acid, trifluoromethanesulfonic acid, pyridinium p-toluenesulfonic acid, salicylic acid, sulfosalicylic acid, citric acid, benzoic acid, hydroxybenzoic acid, naphthalenecarboxylic acid Acidic compounds such as acids or / and thermal acid generators such as 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, and other organic sulfonic acid alkyl esters may be added. I can do it.
- the blending amount is 0.0001 to 20% by mass, preferably 0.0005 to 10% by mass, preferably 0.01 to 3% by mass, based on the total solid content.
- hydrolysis condensate polysiloxane
- the hydrolyzable condensate (polyorganosiloxane) of the hydrolyzable silane can obtain a condensate having a weight average molecular weight of 1,000 to 1,000,000, or 1,000 to 100,000. These molecular weights are molecular weights obtained in terms of polystyrene by GPC analysis.
- GPC measurement conditions are, for example, GPC apparatus (trade name HLC-8220 GPC, manufactured by Tosoh Corporation), GPC column (trade names Shodex KF803L, KF802, KF801, Showa Denko), column temperature is 40 ° C., and eluent (elution solvent) Is tetrahydrofuran, the flow rate (flow rate) is 1.0 ml / min, and the standard sample is polystyrene (made by Showa Denko KK).
- hydrolysis of the alkoxysilyl group, acyloxysilyl group, or halogenated silyl group 0.5 to 100 mol, preferably 1 to 10 mol of water is used per mol of the hydrolyzable group. Further, 0.001 to 10 mol, preferably 0.001 to 1 mol of hydrolysis catalyst can be used per mol of the hydrolyzable group.
- the reaction temperature during the hydrolysis and condensation is usually 20 to 80 ° C. Hydrolysis may be performed completely or partially. That is, a hydrolyzate or a monomer may remain in the hydrolysis condensate.
- a catalyst can be used in the hydrolysis and condensation.
- An acid or a base can be used as the hydrolysis catalyst.
- the hydrolysis catalyst include metal chelate compounds, organic acids, inorganic acids, organic bases, and inorganic bases.
- Examples of the metal chelate compound as the hydrolysis catalyst include triethoxy mono (acetylacetonato) titanium, tri-n-propoxy mono (acetylacetonato) titanium, tri-i-propoxy mono (acetylacetonato) titanium, tri -N-Butoxy mono (acetylacetonato) titanium, tri-sec-butoxy mono (acetylacetonato) titanium, tri-t-butoxy mono (acetylacetonato) titanium, diethoxy bis (acetylacetonato) titanium , Di-n-propoxy bis (acetylacetonato) titanium, di-i-propoxy bis (acetylacetonato) titanium, di-n-butoxy bis (acetylacetonato) titanium, di-sec-butoxy bis (Acetylacetonate) titanium, di-t Butoxy bis (acetylacetonato) titanium, monoethoxy tris (acetylacetonato) titanium
- Organic acids as hydrolysis catalysts are, for example, acetic acid, propionic acid, butanoic acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, oxalic acid, maleic acid, methylmalonic acid, adipic acid, sebacin Acid, gallic acid, butyric acid, merit acid, arachidonic acid, 2-ethylhexanoic acid, oleic acid, stearic acid, linoleic acid, linolenic acid, salicylic acid, benzoic acid, p-aminobenzoic acid, p-toluenesulfonic acid, benzenesulfone Examples include acid, monochloroacetic acid, dichloroacetic acid, trichloroacetic acid, trifluoroacetic acid, formic acid, malonic acid, sulfonic acid, phthal
- Examples of the inorganic acid as the hydrolysis catalyst include hydrochloric acid, nitric acid, sulfuric acid, hydrofluoric acid, phosphoric acid and the like.
- Organic bases as hydrolysis catalysts include, for example, pyridine, pyrrole, piperazine, pyrrolidine, piperidine, picoline, trimethylamine, triethylamine, monoethanolamine, diethanolamine, dimethylmonoethanolamine, monomethyldiethanolamine, triethanolamine, diazabicyclooctane, diazine.
- Examples include zabicyclononane, diazabicycloundecene, and tetramethylammonium hydroxide.
- the inorganic base include ammonia, sodium hydroxide, potassium hydroxide, barium hydroxide, calcium hydroxide and the like. Of these catalysts, metal chelate compounds, organic acids, and inorganic acids are preferred, and these may be used alone or in combination of two or more.
- organic solvent used in the hydrolysis examples include n-pentane, i-pentane, n-hexane, i-hexane, n-heptane, i-heptane, 2,2,4-trimethylpentane, n-octane, i- Aliphatic hydrocarbon solvents such as octane, cyclohexane and methylcyclohexane; benzene, toluene, xylene, ethylbenzene, trimethylbenzene, methylethylbenzene, n-propylbenzene, i-propylbenzene, diethylbenzene, i-butylbenzene, triethylbenzene, di -Aromatic hydrocarbon solvents such as i-propyl benzene, n-amyl naphthalene, trimethylbenzene; methanol, ethanol, n-
- acetone methyl ethyl ketone, methyl-n-propyl ketone, methyl-n-butyl ketone, diethyl ketone, methyl-i-butyl ketone, methyl-n-pentyl ketone, ethyl-n-butyl ketone, methyl-n-hexyl ketone, di- Ketone solvents such as i-butyl ketone, trimethylnonanone, cyclohexanone, methylcyclohexanone, 2,4-pentanedione, acetonylacetone, diacetone alcohol, acetophenone, and fenchon are preferred from the viewpoint of storage stability of the solution.
- the coating polysiloxane composition of the present invention may contain a curing catalyst.
- the curing catalyst functions as a curing catalyst when a coating film containing polyorganosiloxane composed of a hydrolysis condensate is heated and cured.
- ammonium salts, phosphines, phosphonium salts, and sulfonium salts can be used.
- the formula (D-1) (Wherein m is an integer of 2 to 11, n is an integer of 2 to 3, R 21 is an alkyl group or an aryl group, and Y ⁇ is an anion), a quaternary ammonium salt having the structure (D-2): (Wherein R 22 , R 23 , R 24 and R 25 represent an alkyl group or an aryl group, N represents a nitrogen atom, Y ⁇ represents an anion, and R 22 , R 23 , R 24 and R 25 represent A quaternary ammonium salt having a structure represented by the formula: Formula (D-3): A quaternary ammonium salt having the structure (wherein R 26 and R 27 represent an alkyl group or an aryl group, Y ⁇ represents an anion), Formula (D-4): A quaternary ammonium salt having the structure (wherein R 28 represents an alkyl group or an aryl group, Y ⁇ represents an anion), Formula (D-5)
- the formula (D-7) (However, R 31 , R 32 , R 33 , and R 34 represent an alkyl group or an aryl group, P represents a phosphorus atom, Y ⁇ represents an anion, and R 31 , R 32 , R 33 , and R 34) Are each bonded to a phosphorus atom by a CP bond).
- the formula (D-8) (However, R 35 , R 36 , and R 37 are alkyl groups or aryl groups, S is a sulfur atom, Y ⁇ is an anion, and R 35 , R 36 , and R 37 are CS bonds, respectively. And a tertiary sulfonium salt which is bonded to a sulfur atom.
- the compound of the above formula (D-1) is a quaternary ammonium salt derived from an amine, m represents an integer of 2 to 11, and n represents an integer of 2 to 3.
- R 21 of this quaternary ammonium salt represents an alkyl group or aryl group having 1 to 18 carbon atoms, preferably 2 to 10 carbon atoms, such as a linear alkyl group such as an ethyl group, a propyl group or a butyl group, or a benzyl group. Cyclohexyl group, cyclohexylmethyl group, dicyclopentadienyl group and the like.
- Anions (Y ⁇ ) include halogen ions such as chlorine ions (Cl ⁇ ), bromine ions (Br ⁇ ), iodine ions (I ⁇ ), carboxylates (—COO ⁇ ), sulfonates (—SO 3 ⁇ ). And acid groups such as alcoholate (—O ⁇ ).
- the compound of the above formula (D-2) is a quaternary ammonium salt represented by R 22 R 23 R 24 R 25 N + Y ⁇ .
- R 22 , R 23 , R 24 and R 25 are an alkyl group or aryl group having 1 to 18 carbon atoms, or a silane compound bonded to a silicon atom by a Si—C bond.
- Anions (Y ⁇ ) are halogen ions such as chlorine ions (Cl ⁇ ), bromine ions (Br ⁇ ), iodine ions (I ⁇ ), carboxylates (—COO ⁇ ), sulfonates (—SO 3 ⁇ ), An acid group such as alcoholate (—O ⁇ ) can be mentioned.
- This quaternary ammonium salt can be obtained commercially, for example, tetramethylammonium acetate, tetrabutylammonium acetate, triethylbenzylammonium chloride, triethylbenzylammonium bromide, trioctylmethylammonium chloride, tributylbenzyl chloride. Examples include ammonium and trimethylbenzylammonium chloride.
- the compound of the above formula (D-3) is a quaternary ammonium salt derived from 1-substituted imidazole
- R 26 and R 27 are an alkyl group or aryl group having 1 to 18 carbon atoms
- R 26 And the total number of carbon atoms of R 27 is preferably 7 or more.
- R 26 can be exemplified by methyl group, ethyl group, propyl group, phenyl group and benzyl group
- R 27 can be exemplified by benzyl group, octyl group and octadecyl group.
- Anions (Y ⁇ ) are halogen ions such as chlorine ions (Cl ⁇ ), bromine ions (Br ⁇ ), iodine ions (I ⁇ ), carboxylates (—COO ⁇ ), sulfonates (—SO 3 ⁇ ), An acid group such as alcoholate (—O ⁇ ) can be mentioned.
- This compound can be obtained as a commercial product.
- imidazole compounds such as 1-methylimidazole and 1-benzylimidazole are reacted with alkyl halides and aryl halides such as benzyl bromide and methyl bromide. Can be manufactured.
- the compound of the above formula (D-4) is a quaternary ammonium salt derived from pyridine
- R 28 is an alkyl or aryl group having 1 to 18 carbon atoms, preferably 4 to 18 carbon atoms,
- a butyl group, an octyl group, a benzyl group, and a lauryl group can be exemplified.
- Anions (Y ⁇ ) are halogen ions such as chlorine ions (Cl ⁇ ), bromine ions (Br ⁇ ), iodine ions (I ⁇ ), carboxylates (—COO ⁇ ), sulfonates (—SO 3 ⁇ ), An acid group such as alcoholate (—O ⁇ ) can be mentioned.
- this compound can be obtained as a commercial product, it is produced, for example, by reacting pyridine with an alkyl halide such as lauryl chloride, benzyl chloride, benzyl bromide, methyl bromide, octyl bromide, or an aryl halide. I can do it. Examples of this compound include N-laurylpyridinium chloride and N-benzylpyridinium bromide.
- the compound of the above formula (D-5) is a quaternary ammonium salt derived from a substituted pyridine represented by picoline or the like, and R 29 is an alkyl group having 1 to 18 carbon atoms, preferably 4 to 18 carbon atoms.
- the aryl group include a methyl group, an octyl group, a lauryl group, and a benzyl group.
- R 30 is an alkyl group or aryl group having 1 to 18 carbon atoms. For example, in the case of quaternary ammonium derived from picoline, R 30 is a methyl group.
- Anions (Y ⁇ ) are halogen ions such as chlorine ions (Cl ⁇ ), bromine ions (Br ⁇ ), iodine ions (I ⁇ ), carboxylates (—COO ⁇ ), sulfonates (—SO 3 ⁇ ), An acid group such as alcoholate (—O ⁇ ) can be mentioned.
- This compound can also be obtained as a commercial product. For example, a substituted pyridine such as picoline is reacted with an alkyl halide such as methyl bromide, octyl bromide, lauryl chloride, benzyl chloride or benzyl bromide, or an aryl halide. Can be manufactured. Examples of this compound include N-benzylpicolinium chloride, N-benzylpicolinium bromide, N-laurylpicolinium chloride and the like.
- the compound of the above formula (D-6) is a tertiary ammonium salt derived from an amine, m represents an integer of 2 to 11, and n represents an integer of 2 to 3.
- Anions (Y ⁇ ) include halogen ions such as chlorine ions (Cl ⁇ ), bromine ions (Br ⁇ ), iodine ions (I ⁇ ), carboxylates (—COO ⁇ ), sulfonates (—SO 3 ⁇ ). And acid groups such as alcoholate (—O ⁇ ). It can be produced by reacting an amine with a weak acid such as carboxylic acid or phenol. Examples of the carboxylic acid include formic acid and acetic acid.
- the anion (Y ⁇ ) is (HCOO ⁇ ), and when acetic acid is used, the anion (Y ⁇ ) is (CH 3 COO). - ) When phenol is used, the anion (Y ⁇ ) is (C 6 H 5 O ⁇ ).
- the compound of the above formula (D-7) is a quaternary phosphonium salt having a structure of R 31 R 32 R 33 R 34 P + Y — .
- R 31 , R 32 , R 33 , and R 34 are an alkyl group or aryl group having 1 to 18 carbon atoms, or a silane compound bonded to a silicon atom by a Si—C bond, preferably R 31 to R 34 of the four substituents of 34 are a phenyl group or a substituted phenyl group, and examples thereof include a phenyl group and a tolyl group, and the remaining one is an alkyl group having 1 to 18 carbon atoms, A silane compound bonded to a silicon atom by an aryl group or Si—C bond.
- Anions (Y ⁇ ) include halogen ions such as chlorine ions (Cl ⁇ ), bromine ions (Br ⁇ ), iodine ions (I ⁇ ), carboxylates (—COO ⁇ ), sulfonates (—SO 3 ⁇ ). And acid groups such as alcoholate (—O ⁇ ).
- This compound can be obtained as a commercial product, for example, a halogenated tetraalkylphosphonium such as tetra-n-butylphosphonium halide, tetra-n-propylphosphonium halide, or a trialkylbenzyl halide such as triethylbenzylphosphonium halide.
- Triphenylmonoalkylphosphonium halides such as phosphonium, triphenylmethylphosphonium halide, triphenylethylphosphonium halide, triphenylbenzylphosphonium halide, tetraphenylphosphonium halide, tritolylmonoarylphosphonium halide, or tritolyl monohalogenate Examples thereof include alkylphosphonium (the halogen atom is a chlorine atom or a bromine atom).
- halogens such as triphenylmonoalkylphosphonium halides such as triphenylmethylphosphonium halide, triphenylethylphosphonium halide, triphenylmonoarylphosphonium halides such as triphenylbenzylphosphonium halide, and halogens such as tritolylmonophenylphosphonium halide.
- Preferred is a tolylyl monoarylphosphonium halide, or a tolyl monoalkylphosphonium halide such as a tolyl monomethylphosphonium halide (the halogen atom is a chlorine atom or a bromine atom).
- the phosphines include methylphosphine, ethylphosphine, propylphosphine, isopropylphosphine, isobutylphosphine, phenylphosphine and the like first phosphine, dimethylphosphine, diethylphosphine, diisopropylphosphine, diisoamylphosphine, diphenylphosphine and the like.
- tertiary phosphines such as trimethylphosphine, triethylphosphine, triphenylphosphine, methyldiphenylphosphine and dimethylphenylphosphine.
- the compound of the above formula (D-8) is a tertiary sulfonium salt having a structure of R 35 R 36 R 37 S + Y — .
- R 35 , R 36 , and R 37 are alkyl or aryl groups having 1 to 18 carbon atoms, or a silane compound bonded to a silicon atom through a Si—C bond, preferably 4 of R 35 to R 37 .
- Three of the substituents are phenyl groups or substituted phenyl groups, and examples thereof include phenyl groups and tolyl groups, and the remaining one is an alkyl group having 1 to 18 carbon atoms or an aryl group. It is.
- Anions (Y ⁇ ) include halogen ions such as chlorine ions (Cl ⁇ ), bromine ions (Br ⁇ ), iodine ions (I ⁇ ), carboxylates (—COO ⁇ ), sulfonates (—SO 3 ⁇ ). And acid groups such as alcoholate (—O ⁇ ), maleate anion, and nitrate anion. This compound is available as a commercial product.
- halogenated tetraalkylsulfonium such as tri-n-butylsulfonium halide and tri-n-propylsulfonium halide
- trialkylbenzyl halide such as diethylbenzylsulfonium halide.
- Halogenated diphenylmonoalkylsulfonium such as sulfonium, halogenated diphenylmethylsulfonium, halogenated diphenylethylsulfonium, halogenated triphenylsulfonium, (halogen atom is chlorine or bromine atom), tri-n-butylsulfonium carboxylate, tri-n- Tetraalkylphosphonium carboxylates such as propylsulfonium carboxylate and trialkylbenzines such as diethylbenzylsulfonium carboxylate Sulfonium carboxylate, diphenylmethyl sulfonium carboxylate, diphenyl monoalkyl sulfonium carboxylate, triphenylsulfonium carboxylate such as diphenylethyl sulfonium carboxylate. Further, triphenylsulfonium halide and triphenylsulfonium carboxylate can
- a nitrogen-containing silane compound can be added as a curing catalyst.
- the nitrogen-containing silane compound include imidazole ring-containing silane compounds such as N- (3-triethoxysilylpropyl) -4,5-dihydroimidazole.
- the curing catalyst is 0.01 to 10 parts by mass, 0.01 to 5 parts by mass, or 0.01 to 3 parts by mass with respect to 100 parts by mass of the polyorganosiloxane.
- Hydrolyzable silane is hydrolyzed using a catalyst in a solvent to condense, and the resulting hydrolyzed condensate (polymer) simultaneously removes by-product alcohol, used hydrolysis catalyst, and water by distillation under reduced pressure. be able to.
- the acid and base catalyst used for hydrolysis can be removed by neutralization or ion exchange.
- An organic acid, water, alcohol, or a combination thereof can be added to the coating polysiloxane composition of the present invention in order to stabilize the coating polysiloxane composition containing the hydrolysis condensate.
- organic acid examples include oxalic acid, malonic acid, methylmalonic acid, succinic acid, maleic acid, malic acid, tartaric acid, phthalic acid, citric acid, glutaric acid, citric acid, lactic acid, and salicylic acid. Of these, oxalic acid and maleic acid are preferred.
- the organic acid to be added is 0.1 to 5.0 parts by mass with respect to 100 parts by mass of the condensate (polyorganosiloxane). Moreover, pure water, ultrapure water, ion exchange water, etc. can be used for the water to add, The addition amount can be 1 thru
- alcohol to add what is easy to be scattered by the heating after application
- coating is preferable, for example, methanol, ethanol, propanol, isopropanol, a butanol etc. are mentioned.
- the added alcohol can be 1 to 20 parts by mass with respect to 100 parts by mass of the resist underlayer film forming composition.
- the coating polysiloxane composition may include one or more selected from the group consisting of water, acid, and a curing catalyst.
- the coating polysiloxane composition of the present invention can contain an organic polymer compound, a photoacid generator, a surfactant, and the like, if necessary, in addition to the above components.
- the dry etching rate (amount of decrease in film thickness per unit time), attenuation coefficient, refractive index, etc. of the resist underlayer film formed from the coating polysiloxane composition of the present invention are adjusted. be able to.
- Examples of the photoacid generator contained in the coating polysiloxane composition of the present invention include onium salt compounds, sulfonimide compounds, and disulfonyldiazomethane compounds.
- Examples of onium salt compounds include diphenyliodonium hexafluorophosphate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoronormalbutanesulfonate, diphenyliodonium perfluoronormaloctanesulfonate, diphenyliodonium camphorsulfonate, bis (4-tert-butylphenyl) iodonium camphor.
- Iodonium salt compounds such as sulfonate and bis (4-tert-butylphenyl) iodonium trifluoromethanesulfonate, and triphenylsulfonium hexafluoroantimonate, triphenylsulfonium nonafluoronormal butane sulfonate, triphenylsulfonium camphorsulfonate and triphenylsulfone Sulfonium salt compounds such as trifluoromethane sulfonate and the like.
- sulfonimide compounds include N- (trifluoromethanesulfonyloxy) succinimide, N- (nonafluoronormalbutanesulfonyloxy) succinimide, N- (camphorsulfonyloxy) succinimide and N- (trifluoromethanesulfonyloxy) naphthalimide. Can be mentioned.
- disulfonyldiazomethane compound examples include bis (trifluoromethylsulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (phenylsulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, and bis (2,4-dimethylbenzenesulfonyl). And diazomethane, and methylsulfonyl-p-toluenesulfonyldiazomethane.
- a photo-acid generator can use only 1 type, or can be used in combination of 2 or more type.
- the ratio is 0.01 to 15 parts by mass, or 0.1 to 10 parts by mass, or 0.5 with respect to 100 parts by mass of the condensate (polyorganosiloxane). Thru
- the surfactant is effective in suppressing the occurrence of pinholes and installations when the coating polysiloxane composition of the present invention is applied to a substrate.
- the surfactant contained in the coating polysiloxane composition of the present invention include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene oleyl ether.
- surfactants may be used alone or in combination of two or more.
- the ratio is 0.0001 to 5 parts by mass, or 0.001 to 1 part by mass, or 0.01 to 1 with respect to 100 parts by mass of the condensate (polyorganosiloxane). Part by mass.
- a rheology modifier, an adhesion aid, and the like can be added to the coating polysiloxane composition of the present invention.
- the rheology modifier is effective for improving the fluidity of the underlayer film forming composition.
- the adhesion aid is effective for improving the adhesion between the semiconductor substrate or resist and the lower layer film.
- any solvent can be used without particular limitation as long as it can dissolve the solid content.
- solvents include methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol, propylene glycol monomethyl ether, propylene glycol monoethyl ether, methyl isobutyl carbinol, propylene glycol monobutyl ether, propylene glycol monomethyl ether acetate, propylene glycol mono Ether ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate, toluene, xylene, methyl ethyl ketone, cyclopentanone, cyclohexanone, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl ethoxyacetate , Eth
- a semiconductor substrate 1 represents a wafer
- a semiconductor substrate 2 represents an oxide film, a metal layer, or the like coated thereon.
- an organic underlayer film 3 is formed on a semiconductor substrate 2 (step (1)), and a silicon hard mask forming composition is applied thereon and baked to form a silicon hard mask 4 (step).
- a resist composition is applied on the silicon hard mask 4 to form a resist film 5 (step (3)). Step (4) of exposing the resist film 5 and developing the resist film 5 after exposure to obtain a resist pattern.
- the silicon hard mask 4 is etched with the resist pattern, the organic underlayer film 3 is etched with the patterned silicon hardmask 4 (step (5)), and the patterned organic underlayer film 3 is formed (step (6) )).
- the polysiloxane composition for coating of the present invention is applied on the patterned organic underlayer film 3 to form a polysiloxane composition film 6 in which the pattern of the organic underlayer film 3 is embedded with the composition (step ( 7a)), the upper surface of the organic underlayer film 3 is exposed by etch back (step (7b)). Furthermore, the organic underlayer film 3 is etched to reverse the pattern (8).
- the organic underlayer film 3 used in the present invention is obtained by applying and curing an organic underlayer film forming composition. Curing can be performed by heating at about 150 to 230 ° C.
- the organic underlayer film forming composition may contain a coating film resin and a solvent. As needed, a crosslinking agent, an acid, an acid generator, a light absorbing compound, and the like can be contained.
- the coating resin is a resin capable of mainly forming a film, and examples thereof include novolak resins, condensed epoxy resins, (meth) acrylic resins, polyether resins, and silicon-containing resins.
- the solid content of the composition is 0.1 to 70% by mass, or 0.1 to 60% by mass.
- Solid content is the content rate of the component remove
- the coating resin can be contained in the solid content at a ratio of 1 to 99.9% by mass, or 50 to 99.9% by mass, or 50 to 95% by mass, or 50 to 90% by mass.
- the coating resin has a weight average molecular weight of 600 to 1000000, or 600 to 200000.
- the silicon hard mask 4 used in the present invention is obtained by applying and curing a silicon hard mask forming composition.
- a condensate obtained by hydrolyzing a hydrolyzable silane can be mentioned.
- This is a polysiloxane, including organopolysiloxanes.
- Hydrolyzable silane is hydrolyzable silane having four hydrolyzable groups, hydrolyzable silane having three hydrolyzable groups, hydrolyzable silane having two hydrolyzable groups, and one hydrolyzate It is obtained by hydrolyzing at least one hydrolyzable silane selected from the group consisting of hydrolyzable silanes having a functional group.
- Hydrolysis is performed by adding a catalyst (for example, an acid catalyst or a basic catalyst) in an organic solvent, followed by condensation by heating to obtain a hydrolyzed condensate (polysiloxane, organopolysiloxane).
- a catalyst for example, an acid catalyst or a basic catalyst
- the solid content of the composition is 0.1 to 70% by mass, or 0.1 to 60% by mass. Solid content is the content rate of the component remove
- the coating resin can be contained in the solid content at a ratio of 1 to 99.9% by mass, or 50 to 99.9% by mass, or 50 to 95% by mass, or 50 to 90% by mass.
- the coating resin has a weight average molecular weight of 600 to 1000000, or 600 to 200000.
- the silicon hard mask 4 can also be formed by vapor deposition.
- a substrate 1 for example, a silicon wafer substrate, a silicon / silicon dioxide coated substrate, a silicon nitride substrate, a glass substrate, an ITO substrate, a polyimide substrate, and a low dielectric constant material (low ⁇ k)
- the composition used in the present invention is coated on a coated substrate or the like by a suitable coating method such as a spinner or a coater.
- a film is formed by firing.
- the conditions for firing are appropriately selected from firing temperatures of 80 ° C. to 250 ° C. and firing times of 0.3 to 60 minutes.
- the firing temperature is 150 ° C. to 250 ° C.
- the firing time is 0.5 to 2 minutes.
- the film thickness of the formed film is, for example, 10 to 1000 nm, 20 to 500 nm, 50 to 300 nm, or 100 to 200 nm.
- a photoresist layer (film) 5 is formed on the hard mask 4.
- the formation of the photoresist layer (film) 5 can be performed by a well-known method, that is, by applying and baking a photoresist composition solution on the lower layer film.
- the film thickness of the photoresist layer (film) 5 is, for example, 50 to 10,000 nm, 100 to 2000 nm, or 200 to 1000 nm.
- the substrate can be processed by selecting an appropriate etching gas.
- an appropriate etching gas For example, it is possible to process the hard mask 4 using a fluorine-based gas having a sufficiently high etching rate for the photoresist film 5 as an etching gas, and an oxygen-based gas having a sufficiently high etching rate for the hard mask 4.
- the organic underlayer film 3 can be processed using the etching gas. Further, the substrate can be processed by reversing the pattern.
- the photoresist is not particularly limited as long as it is sensitive to light used for exposure. Either a negative photoresist or a positive photoresist can be used.
- a positive photoresist comprising a novolac resin and 1,2-naphthoquinonediazide sulfonic acid ester, a chemically amplified photoresist comprising a binder having a group that decomposes with an acid to increase the alkali dissolution rate and a photoacid generator, an acid
- a chemically amplified photoresist comprising a low-molecular compound that decomposes to increase the alkali dissolution rate of the photoresist, an alkali-soluble binder, and a photoacid generator, and a binder having a group that decomposes with an acid to increase the alkali dissolution rate
- a chemically amplified photoresist composed of a low molecular weight compound that decomposes with an acid to increase the al
- Examples include trade name APEX-E manufactured by Shipley, trade name PAR710 manufactured by Sumitomo Chemical Co., Ltd., and trade name SEPR430 manufactured by Shin-Etsu Chemical Co., Ltd. Also, for example, Proc. SPIE, Vol. 3999, 330-334 (2000), Proc. SPIE, Vol. 3999, 357-364 (2000), Proc. SPIE, Vol. 3999, 365-374 (2000), and fluorine-containing polymer-based photoresists.
- a KrF excimer laser (wavelength 248 nm), an ArF excimer laser (wavelength 193 nm), an F2 excimer laser (wavelength 157 nm), or the like can be used.
- post-exposure bake can be performed as necessary.
- the post-exposure heating is performed under conditions appropriately selected from a heating temperature of 70 ° C. to 150 ° C. and a heating time of 0.3 to 10 minutes.
- a resist for electron beam lithography or a resist for EUV lithography can be used instead of a photoresist as a resist.
- the electron beam resist either a negative type or a positive type can be used.
- Chemically amplified resist comprising a binder having a group that decomposes with an acid generator and an acid to change the alkali dissolution rate, a low molecular weight compound that decomposes with an alkali-soluble binder, an acid generator and an acid to change the alkali dissolution rate of the resist
- a chemically amplified resist comprising: a binder having a group that decomposes with an acid generator and an acid to change the alkali dissolution rate; and a chemically amplified resist comprising a low-molecular compound that decomposes with an acid to change the alkali dissolution rate of the resist,
- non-chemically amplified resists composed of a binder having a group that changes the alkali dissolution rate by being
- a methacrylate resin resist a methacrylate-polyhydroxystyrene hybrid resin resist, or a polyhydroxystyrene resin resist
- a negative type or a positive type can be used.
- Chemically amplified resist comprising a binder having a group that decomposes with an acid generator and an acid to change the alkali dissolution rate, a low molecular weight compound that decomposes with an alkali-soluble binder, an acid generator and an acid to change the alkali dissolution rate of the resist
- a chemically amplified resist comprising: a binder having a group that decomposes with an acid generator and an acid to change the alkali dissolution rate; and a chemically amplified resist comprising a low-molecular compound that decomposes with an acid to change the alkali dissolution rate of the resist,
- a non-chemically amplified resist composed of a binder having a group that is decomposed by EUV light to change the alkali dissolution rate
- a non-chemically amplified resist composed of a binder having a portion that is cut by EUV light to change the alkali dissolution rate.
- developer for example, an alkali developer
- Developers include aqueous solutions of alkali metal hydroxides such as potassium hydroxide and sodium hydroxide, aqueous solutions of quaternary ammonium hydroxides such as tetramethylammonium hydroxide, tetraethylammonium hydroxide and choline, ethanolamine, propylamine, An alkaline aqueous solution such as an aqueous amine solution such as ethylenediamine can be mentioned as an example. Further, a surfactant or the like can be added to these developers.
- the development conditions are appropriately selected from a temperature of 5 to 50 ° C. and a time of 10 to 600 seconds.
- an organic solvent can be used as a developer. After the exposure, development is performed with a developer (solvent). As a result, for example, when a positive photoresist is used, the unexposed portion of the photoresist is removed, and a photoresist pattern is formed.
- Developers include, for example, methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, amyl acetate, isoamyl acetate, ethyl methoxyacetate, ethyl ethoxy acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl Ether acetate, ethylene glycol monobutyl ether acetate, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monopropyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monophenyl ether acetate, diethylene glycol monobutyl ether acetate, 2-methoxybutyl Cetate, 3-methoxybutyl acetate, 4-methoxybutyl acetate, 3-methyl-3-me
- the hard mask 4 is removed using the pattern of the photoresist (upper layer) film 5 thus formed as a protective film, and then the patterned photoresist film 5 and the film 4 made of the hard mask are protected. As a result, the organic lower layer film 3 (lower layer) is removed. Finally, a coating polysiloxane composition is applied on the patterned organic underlayer film 3 to form a coating polysiloxane composition film 6 in which the polysiloxane composition is embedded between the organic underlayer film 3 patterns. Then, the upper surface of the organic underlayer film 3 is exposed by etch back, and the organic underlayer film 3 is etched to reverse the pattern.
- the hard mask 4 where the photoresist film 5 has been removed is removed by dry etching to expose the upper surface of the organic underlayer film 3.
- dry etching of the hard mask 4 tetrafluoromethane (CF 4 ), perfluorocyclobutane (C 4 F 8 ), perfluoropropane (C 3 F 8 ), trifluoromethane, carbon monoxide, argon, oxygen, nitrogen, six Gases such as sulfur fluoride, difluoromethane, nitrogen trifluoride and chlorine trifluoride, chlorine, trichloroborane and dichloroborane can be used.
- a halogen-based gas is preferably used for dry etching of the hard mask 4.
- a photoresist made of an organic substance is basically difficult to remove.
- the hard mask containing many silicon atoms is quickly removed by the halogen-based gas. Therefore, a decrease in the film thickness of the photoresist film 5 due to dry etching of the hard mask can be suppressed. As a result, the photoresist can be used as a thin film.
- the hard mask dry etching is preferably performed using a fluorine-based gas.
- fluorine-based gas examples include tetrafluoromethane (CF 4 ), perfluorocyclobutane (C 4 F 8 ), perfluoropropane (C 3 F 8 ), Examples thereof include trifluoromethane and difluoromethane (CH 2 F 2 ).
- the organic underlayer film 3 is removed using the patterned photoresist film 5 and the film 4 made of a hard mask as a protective film.
- the organic lower layer film 3 (lower layer) is preferably performed by dry etching with an oxygen-based gas. This is because the hard mask 4 containing a large amount of silicon atoms is difficult to remove by dry etching using an oxygen-based gas.
- a polysiloxane composition for coating is applied on the patterned organic underlayer film 3 to form a polysiloxane composition film 6 in which the composition is embedded between the patterns of the organic underlayer film 3, and the organic underlayer film is etched back.
- the fluorine-based gas is used as the gas used for the etch back. Then, the pattern can be reversed by etching or ashing the organic underlayer film 3.
- reaction product polysiloxane (corresponding to the formula (1-1)) .
- acetone was substituted with propylene glycol monomethyl ether acetate using an evaporator.
- solid content in the obtained reaction product was 22.18 mass% as a result of measuring by the baking method.
- molecular weight (Mw) of the obtained product (solid content) was 1400.
- the polysiloxanes obtained as described above were mixed in the proportions shown in Table 2, and filtered through a filter having a pore diameter of 0.1 ⁇ m to obtain a coating polysiloxane composition for pattern inversion.
- reaction product polysiloxane (corresponding to the formula (1-1)) .
- acetone was substituted with propylene glycol monomethyl ether acetate using an evaporator.
- solid content in the obtained reaction product was 18.39 mass% as a result of measuring by the baking method.
- molecular weight (Mw) of the obtained product (solid content) was 1400.
- the polysiloxanes obtained as described above were mixed in the proportions shown in Table 2, and filtered through a filter having a pore diameter of 0.1 ⁇ m to obtain a coating polysiloxane composition for pattern inversion.
- the flask containing the reaction solution was allowed to cool and then set in an evaporator, and ethanol produced during the reaction was removed to obtain a reaction product (polysiloxane) (corresponding to the formula (1-1)) .
- acetone was substituted with propylene glycol monomethyl ether acetate using an evaporator.
- solid content in the obtained reaction product was 24.16 mass% as a result of measuring by the baking method.
- the molecular weight (Mw) of the obtained product (solid content) was 1400.
- the polysiloxane obtained as described above was mixed in the ratio shown in Table 2 and filtered through a filter having a pore diameter of 0.1 ⁇ m to form a coating polysiloxane composition for pattern inversion.
- the flask containing the reaction solution was allowed to cool and then set in an evaporator, and ethanol produced during the reaction was removed to obtain a reaction product (polysiloxane) (corresponding to the formula (1-1)) . Furthermore, acetone was substituted with propylene glycol monomethyl ether acetate using an evaporator. In addition, as a result of measuring solid content in the obtained reaction product by the baking method, it was 23.55 mass%. Moreover, the molecular weight (Mw) of the obtained product (solid content) was 1300. Thereafter, the polysiloxanes obtained as described above were mixed in the proportions shown in Table 2, and filtered through a filter having a pore diameter of 0.1 ⁇ m to obtain a coating polysiloxane composition for pattern inversion.
- the mixture was reacted at 85 ° C. for 4 hours in an oil bath.
- the flask containing the reaction solution was allowed to cool and then set in an evaporator, and ethanol produced during the reaction was removed to obtain a reaction product (polysiloxane) (corresponding to Formula (1-2)) .
- acetone was substituted with propylene glycol monomethyl ether acetate using an evaporator.
- solid content in the obtained reaction product was 29.94 mass% as a result of measuring by the baking method.
- the molecular weight (Mw) of the obtained product (solid content) was 1200.
- the polysiloxanes obtained as described above were mixed in the ratios shown in Tables 1 and 2 and filtered through a filter having a pore diameter of 0.1 ⁇ m to obtain a coating polysiloxane composition for pattern inversion.
- the mixture was reacted at 85 ° C. for 4 hours in an oil bath.
- the flask containing the reaction solution was allowed to cool and then set in an evaporator, and ethanol produced during the reaction was removed to obtain a reaction product (polysiloxane) (corresponding to Formula (1-2)) .
- acetone was substituted with propylene glycol monomethyl ether acetate using an evaporator.
- solid content in the obtained reaction product was 29.28 mass% as a result of measuring by the baking method.
- the molecular weight (Mw) of the obtained product (solid content) was 1200.
- the polysiloxanes obtained as described above were mixed in the proportions shown in Table 2, and filtered through a filter having a pore diameter of 0.1 ⁇ m to obtain a coating polysiloxane composition for pattern inversion.
- a dropping funnel containing 30.63 g of an aqueous hydrochloric acid solution (0.01 mol / liter) prepared by attaching a cooling tube was set in the flask, and the aqueous hydrochloric acid solution was slowly added dropwise at room temperature and stirred for several minutes. Thereafter, the mixture was reacted at 85 ° C. for 4 hours in an oil bath. After completion of the reaction, the flask containing the reaction solution was allowed to cool and then set in an evaporator, and ethanol produced during the reaction was removed to obtain a reaction product (polysiloxane) (corresponding to Formula (1-4)) . Furthermore, acetone was substituted with propylene glycol monomethyl ether acetate using an evaporator.
- solid content in the obtained reaction product was 24.50 mass% as a result of measuring by the baking method.
- molecular weight (Mw) of the obtained product (solid content) was 1100.
- reaction product polysiloxane (corresponding to Formula (1-5))
- solid content in the obtained reaction product was 19.80 mass% as a result of measuring by the baking method.
- molecular weight (Mw) of the obtained product (solid content) was 3000.
- the mixed solution was added dropwise to the reaction solvent at room temperature. After the addition, the mixture was reacted for 240 minutes while maintaining at 40 ° C. in an oil bath, cooled to room temperature, and diluted with 251 ml of ethyl acetate. 0.2 mol% hydrochloric acid was added for neutralization, and the aqueous layer separated into two layers was removed. The remaining organic layer was further washed with 125 ml of water three times.
- the flask containing the reaction solution was allowed to cool and then set in an evaporator, and ethanol produced during the reaction was removed to obtain a reaction product (polysiloxane) (corresponding to the formula (1-1)) . Furthermore, acetone was substituted with propylene glycol monomethyl ether acetate using an evaporator. In addition, as a result of measuring solid content in the obtained reaction product by the baking method, it was 20.22 mass%. Moreover, the molecular weight (Mw) of the obtained product (solid content) was 1400. Thereafter, the polysiloxanes obtained as described above were mixed in the proportions shown in Table 2, and filtered through a filter having a pore diameter of 0.1 ⁇ m to obtain a coating polysiloxane composition for pattern inversion.
- reaction product polysiloxane (corresponding to the formula (1-1)) .
- acetone was substituted with propylene glycol monomethyl ether acetate using an evaporator.
- solid content in the obtained reaction product was 25.47 mass% as a result of measuring by the baking method.
- molecular weight (Mw) of the obtained product (solid content) was 1400.
- the polysiloxanes obtained as described above were mixed in the proportions shown in Table 2, and filtered through a filter having a pore diameter of 0.1 ⁇ m to obtain a coating polysiloxane composition for pattern inversion.
- maleic acid is MA
- benzyltriethylammonium chloride is BTEAC
- N- (3-triethoxysilylpropyl) -4,5-dihydroimidazole is IMIDTEOS
- triphenylsulfonium nitrate is TPSNO3
- monotriphenyls maleate Rufonium is TPSMA
- triphenylsulfonium trifluoroacetate is TPSTFA
- triphenylsulfonium chloride is TPSCl
- triphenylsulfonium camphorsulfonate is TPSCS
- triphenylsulfonium trifluoromethanesulfonate is TPSTf
- nonafluorobutanesulfonate triphenyl Sulfonium
- triphenylsulfonium adamantanecarboxy-1,1,2-trifluorobutanesulfonate is TPSNf AdTF
- the coating polysiloxane compositions of Examples 1 to 29 and Comparative Examples 1 and 2 were applied on the stepped substrate 7 using a spin coater under the conditions of a rotation speed of 1500 rpm and 60 seconds.
- the polysiloxane composition film 8 for coating was formed by applying and then drying on a hot plate at 215 ° C. for 1 minute.
- the film thickness of the coating polysiloxane composition film 8 is 180 nm.
- the stepped substrate 7 has a hole pattern made of SiO 2 having a height of 300 nm and a minimum width of 20 nm.
- a pattern reversal resin composition that can be satisfactorily embedded between the patterns in the stepped substrate formed on the substrate to be processed and that forms a flat film can be provided.
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Abstract
Description
第2観点として、加水分解性シランが式(1):
(式(1)中、R1はアルキル基、アリール基、ハロゲン化アルキル基、ハロゲン化アリール基、アルコキシアリール基、アルケニル基、又はエポキシ基、アクリロイル基、メタクリロイル基、メルカプト基、もしくはシアノ基を有する有機基で且つSi-C結合によりケイ素原子と結合しているものであり、R2はアルコキシ基、アシルオキシ基、又はハロゲン基を示し、aは0乃至2の整数を示す。)で示され、かつ全シラン中に、式(1)中aが1乃至2である加水分解性シランを30乃至100モル%及び、式(1)中aが0である加水分解性シランを0乃至70モル%となる割合で含むものである第1観点に記載の被覆用ポリシロキサン組成物、
第3観点として、全シラン中に式(1)(式中、aが1乃至2である。)で示される加水分解性シランを100モル%となる割合で含む加水分解性シランの加水分解縮合物と、2乃至6個のメトキシメチル基を有する架橋性化合物とを含む第2観点に記載の被覆用ポリシロキサン組成物、
第4観点として、式(1)中、R1がメチル基又はハロゲン基若しくはアルコキシ基で置換されていても良いフェニル基である第2観点又は第3観点に記載の被覆用ポリシロキサン組成物、
第5観点として、加水分解性シランの加水分解が、加水分解触媒として酸、又は塩基を用いて行われる第1観点乃至第4観点のいずれか一つに記載の被覆用ポリシロキサン組成物、
第6観点として、被覆用ポリシロキサン組成物が更に水、酸、及び硬化触媒からなる群から選ばれた一つ以上を含む第1観点乃至第5観点のいずれか一つに記載の被覆用ポリシロキサン組成物、及び
第7観点として、半導体基板上に有機下層膜を形成する工程(1)、その上にシリコンハードマスク形成組成物を塗布し焼成しシリコンハードマスクを形成する工程(2)、前記シリコンハードマスクの上にレジスト組成物を塗布しレジスト膜を形成する工程(3)、前記レジスト膜を露光し、露光後に該レジスト膜を現像しレジストパターンを得る工程(4)、前記レジストパターンによりシリコンハードマスクをエッチングする工程(5)、パターン化されたシリコンハードマスクにより有機下層膜をエッチングしパターン化された有機下層膜を形成する工程(6)、前記パターン化された有機下層膜の上に第1観点乃至第6観点のいずれか一つに記載の被覆用ポリシロキサン組成物を塗布し該有機下層膜のパターン間を該ポリシロキサン組成物で埋め込み、エッチバックにより該有機下層膜の上面を露出させる工程(7)、前記有機下層膜をエッチングしてパターンを反転する工程(8)を含む半導体装置の製造方法である。
しかし、本発明では被加工基板上のフォトレジストパターンと比較しアスペクト比の大きな段差基板を用いてパターンの反転を行うことができ、その結果高アスペクト比の反転パターンが得られる。本発明では、アスペクト比の大きな有機下層膜のパターン間への埋め込みが可能であるために、特定のポリシロキサン系組成物による被覆が有効である。
しかし、本発明では被加工基板の直上又は酸化物膜上の有機下層膜をポリシロキサン系組成物で以てパターンの反転を行うことができるため、ポリシロキサン系組成物を埋め込んだ後に硬化してアッシング処理により簡単にパターンの反転が可能となる。
ここで、式(1)中、R1はアルキル基、アリール基、ハロゲン化アルキル基、ハロゲン化アリール基、アルコキシアリール基、アルケニル基、又はエポキシ基、アクリロイル基、メタクリロイル基、メルカプト基、もしくはシアノ基を有する有機基で且つSi-C結合によりケイ素原子と結合しているものであり、R2はアルコキシ基、アシルオキシ基、又はハロゲン基を示し、aは0乃至2の整数を示す。
本発明の被覆用ポリシロキサン組成物における固形分は、例えば0.1乃至50質量%、又は0.1乃至30質量%、0.1乃至25質量%である。ここで固形分とは被覆用ポリシロキサン組成物の全成分から溶剤成分を除いたものである。
固形分中に占める加水分解性シラン、その加水分解物、及びその加水分解縮合物の割合は、20質量%以上であり、例えば50乃至100質量%、60乃至99質量%、70乃至99質量%である。
上記アクリロイル基を有する有機基としては、アクリロイルメチル、アクリロイルエチル、アクリロイルプロピル等が挙げられる。
上記メタクリロイル基を有する有機基としては、メタクリロイルメチル、メタクリロイルエチル、メタクリロイルプロピル等が挙げられる。
上記メルカプト基を有する有機基としては、エチルメルカプト、ブチルメルカプト、ヘキシルメルカプト、オクチルメルカプト等が挙げられる。
上記シアノ基を有する有機基としては、シアノエチル、シアノプロピル等が挙げられる。
以上に記載した基の例は、ハロゲン化アルキル基、ハロゲン化アリール基、アルコキシアリール基におけるアルキル基、アリール基、アルコキシ基及びハロゲン基の部分にも適用される。
上記2乃至6個のメトキシメチル基を有する架橋性化合物は、メラミン系、置換尿素系、またはそれらのポリマー系等が挙げられる。好ましくは、架橋形成置換基を有する架橋剤であり、メトキシメチル化グリコールウリル、ブトキシメチル化グリコールウリル、メトキシメチル化メラミン、ブトキシメチル化メラミン、メトキシメチル化ベンゾグワナミン、ブトキシメチル化ベンゾグワナミン、メトキシメチル化尿素、ブトキシメチル化尿素、メトキシメチル化チオ尿素、またはメトキシメチル化チオ尿素等の化合物である。また、これらの化合物の縮合体も使用することができる。架橋剤の添加量は、使用する塗布溶剤、使用する下地基板、要求される溶液粘度、要求される膜形状などにより変動するが、全固形分に対して0.001乃至80質量%、好ましくは0.01乃至50質量%、さらに好ましくは0.05乃至40質量%である。
GPCの測定条件は、例えばGPC装置(商品名HLC-8220GPC、東ソー株式会社製)、GPCカラム(商品名ShodexKF803L、KF802、KF801、昭和電工製)、カラム温度は40℃、溶離液(溶出溶媒)はテトラヒドロフラン、流量(流速)は1.0ml/分、標準試料はポリスチレン(昭和電工株式会社製)を用いて行うことができる。
また、加水分解性基の1モル当たり0.001乃至10モル、好ましくは0.001乃至1モルの加水分解触媒を用いることができる。
加水分解と縮合を行う際の反応温度は、通常20乃至80℃である。
加水分解は完全に加水分解を行うことも、部分加水分解することでも良い。即ち、加水分解縮合物中に加水分解物やモノマーが残存していても良い。
加水分解触媒としては、酸又は塩基を用いることができる。
また、加水分解触媒としては、金属キレート化合物、有機酸、無機酸、有機塩基、無機塩基を挙げることができる。
硬化触媒としては、アンモニウム塩、ホスフィン類、ホスホニウム塩、スルホニウム塩を用いることができる。
(但し、mは2乃至11、nは2乃至3の整数を、R21 はアルキル基又はアリール基を、Y-は陰イオンを示す。)で示される構造を有する第4級アンモニウム塩、式(D-2):
(但し、R22、R23、R24及びR25はアルキル基又はアリール基を、Nは窒素原子を、Y-は陰イオンを示し、且つR22、R23、R24、及びR25はそれぞれC-N結合により窒素原子と結合されているものである)で示される構造を有する第4級アンモニウム塩、
式(D-3):
(但し、R26及びR27はアルキル基又はアリール基を、Y-は陰イオンを示す)の構造を有する第4級アンモニウム塩、
式(D-4):
(但し、R28はアルキル基又はアリール基を、Y-は陰イオンを示す)の構造を有する第4級アンモニウム塩、
式(D-5):
(但し、R29及びR30はアルキル基又はアリール基を、Y-は陰イオンを示す)の構造を有する第4級アンモニウム塩、
式(D-6):
(但し、mは2乃至11、nは2乃至3の整数を、Hは水素原子を、Y-は陰イオンを示す)の構造を有する第3級アンモニウム塩が上げられる。
(但し、R31、R32、R33、及びR34はアルキル基又はアリール基を、Pはリン原子を、Y-は陰イオンを示し、且つR31、R32、R33、及びR34はそれぞれC-P結合によりリン原子と結合されているものである)で示される第4級ホスホニウム塩が上げられる。
(但し、R35、R36、及びR37はアルキル基又はアリール基を、Sは硫黄原子を、Y-は陰イオンを示し、且つR35、R36、及びR37はそれぞれC-S結合により硫黄原子と結合されているものである)で示される第3級スルホニウム塩が上げられる。
硬化触媒はポリオルガノシロキサン100質量部に対して、0.01乃至10質量部、または0.01乃至5質量部、または0.01乃至3質量部である。
また加えるアルコールとしては塗布後の加熱により飛散しやすいものが好ましく、例えばメタノール、エタノール、プロパノール、イソプロパノール、ブタノール等が挙げられる。加えるアルコールはレジスト下層膜形成組成物100質量部に対して1乃至20質量部とすることができる。
本発明の被覆用ポリシロキサン組成物は、上記の成分の他、必要に応じて有機ポリマー化合物、光酸発生剤及び界面活性剤等を含むことができる。
オニウム塩化合物としてはジフェニルヨードニウムヘキサフルオロホスフエート、ジフェニルヨードニウムトリフルオロメタンスルホネート、ジフェニルヨードニウムノナフルオロノルマルブタンスルホネート、ジフェニルヨードニウムパーフルオロノルマルオクタンスルホネート、ジフェニルヨードニウムカンファースルホネート、ビス(4-tert-ブチルフェニル)ヨードニウムカンファースルホネート及びビス(4-tert-ブチルフェニル)ヨードニウムトリフルオロメタンスルホネート等のヨードニウム塩化合物、及びトリフェニルスルホニウムヘキサフルオロアンチモネート、トリフェニルスルホニウムノナフルオロノルマルブタンスルホネート、トリフェニルスルホニウムカンファースルホネート及びトリフェニルスルホニウムトリフルオロメタンスルホネート等のスルホニウム塩化合物等が挙げられる。
光酸発生剤が使用される場合、その割合としては、縮合物(ポリオルガノシロキサン)100質量部に対して、0.01乃至15質量部、または0.1乃至10質量部、または0.5乃至1質量部である。
本発明の被覆用ポリシロキサン組成物に含まれる界面活性剤としては、例えば、ポリオキシエチレンラウリルエーテル、ポリオキシエチレンステアリルエーテル、ポリオキシエチレンセチルエーテル、ポリオキシエチレンオレイルエーテル等のポリオキシエチレンアルキルエーテル類、ポリオキシエチレンオクチルフエノールエーテル、ポリオキシエチレンノニルフエノールエーテル等のポリオキシエチレンアルキルアリルエーテル類、ポリオキシエチレン・ポリオキシプロピレンブロツクコポリマー類、ソルビタンモノラウレート、ソルビタンモノパルミテート、ソルビタンモノステアレート、ソルビタンモノオレエート、ソルビタントリオレエート、ソルビタントリステアレート等のソルビタン脂肪酸エステル類、ポリオキシエチレンソルビタンモノラウレート、ポリオキシエチレンソルビタンモノパルミテート、ポリオキシエチレンソルビタンモノステアレート、ポリオキシエチレンソルビタントリオレエート、ポリオキシエチレンソルビタントリステアレート等のポリオキシエチレンソルビタン脂肪酸エステル類等のノニオン系界面活性剤、商品名エフトップEF301、EF303、EF352((株)トーケムプロダクツ製)、商品名メガファックF171、F173、R-08、R-30、R-30N、R-40LM(DIC(株)製)、フロラードFC430、FC431(住友スリーエム(株)製)、商品名アサヒガードAG710,サーフロンS-382、SC101、SC102、SC103、SC104、SC105、SC106(旭硝子(株)製)等のフッ素系界面活性剤、及びオルガノシロキサンポリマ-KP341(信越化学工業(株)製)等を挙げることができる。これらの界面活性剤は単独で使用してもよいし、また二種以上の組み合わせで使用することもできる。界面活性剤が使用される場合、その割合としては、縮合物(ポリオルガノシロキサン)100質量部に対して0.0001乃至5質量部、または0.001乃至1質量部、または0.01乃至1質量部である。
図1に示すように、半導体基板2上に有機下層膜3を形成し(工程(1))、その上にシリコンハードマスク形成組成物を塗布し焼成してシリコンハードマスク4を形成し(工程(2))、前記シリコンハードマスク4の上にレジスト組成物を塗布しレジスト膜5を形成する(工程(3))。前記レジスト膜5を露光し、露光後に該レジスト膜5を現像しレジストパターンを得る工程(4)。前記レジストパターンによりシリコンハードマスク4をエッチングし、パターン化されたシリコンハードマスク4により有機下層膜3をエッチングし(工程(5))、パターン化された有機下層膜3を形成する(工程(6))。前記パターン化された有機下層膜3上に本発明の被覆用ポリシロキサン組成物を塗布し該有機下層膜3のパターン間を該組成物で埋め込んだポリシロキサン組成物膜6を形成し(工程(7a))、エッチバックにより有機下層膜3の上面を露出させる(工程(7b))。さらに有機下層膜3をエッチングしてパターンを反転する工程(8)。反転したパターンを利用して基板1と2を加工する工程(9)により、加工された基板1と2よりなる半導体装置が製造される。
また、上記シリコンハードマスク4は蒸着によっても形成することができる。
焼成することにより膜が形成される。焼成する条件としては、焼成温度80℃乃至250℃、焼成時間0.3乃至60分間の中から適宜、選択される。好ましくは、焼成温度150℃乃至250℃、焼成時間0.5乃至2分間である。ここで、形成される膜の膜厚としては、例えば、10乃至1000nmであり、または20乃至500nmであり、または50乃至300nmであり、または100乃至200nmである。
現像液としては、水酸化カリウム、水酸化ナトリウムなどのアルカリ金属水酸化物の水溶液、水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム、コリンなどの水酸化四級アンモニウムの水溶液、エタノールアミン、プロピルアミン、エチレンジアミンなどのアミン水溶液等のアルカリ性水溶液を例として挙げることができる。さらに、これらの現像液に界面活性剤などを加えることもできる。現像の条件としては、温度5乃至50℃、時間10乃至600秒から適宜選択される。
テトラエトキシシラン116.15g(全シラン中に70モル%含有する)、メチルトリエトキシシラン42.60g(全シラン中に30モル%含有する)及びアセトン238.14gをフラスコに入れた。このフラスコに、冷却管を取り付け調製しておいた塩酸水溶液(0.01モル/リットル)53.11gを入れた滴下ロートをセットし、室温下で塩酸水溶液をゆっくり滴下し数分攪拌した。その後オイルバスにて85℃で4時間反応させた。反応終了後、反応溶液の入ったフラスコを放冷してからエバポレーターにセットし、反応中生成したエタノールを除去して反応生成物(ポリシロキサン)を得た(式(1-1)に相当)。さらに、エバポレーターを用いてアセトンをプロピレングリコールモノメチルエーテルアセテートに置換した。尚、得られた反応生成物中の固形分は、焼成法により測定した結果、22.18質量%であった。また、得られた生成物(固形分)の分子量(Mw)は1400であった。その後、上記のようにして得られたポリシロキサンを表2の割合で混合し、孔径0.1μmのフィルターでろ過してパターン反転のための被覆用ポリシロキサン組成物を得た。
テトラエトキシシラン101.23g(全シラン中に60モル%含有する)、メチルトリエトキシシラン57.76g(全シラン中に40モル%含有する)及びアセトン238.48gをフラスコに入れた。このフラスコに、冷却管を取り付け調製しておいた塩酸水溶液(0.01モル/リットル)52.54gを入れた滴下ロートをセットし、室温下で塩酸水溶液をゆっくり滴下し数分攪拌した。その後オイルバスにて85℃で4時間反応させた。反応終了後、反応溶液の入ったフラスコを放冷してからエバポレーターにセットし、反応中生成したエタノールを除去して反応生成物(ポリシロキサン)を得た(式(1-1)に相当)。さらに、エバポレーターを用いてアセトンをプロピレングリコールモノメチルエーテルアセテートに置換した。尚、得られた反応生成物中の固形分は、焼成法により測定した結果、18.39質量%であった。また、得られた生成物(固形分)の分子量(Mw)は1400であった。その後、上記のようにして得られたポリシロキサンを表2の割合で混合し、孔径0.1μmのフィルターでろ過してパターン反転のための被覆用ポリシロキサン組成物を得た。
テトラエトキシシラン85.79g(全シラン中に50モル%含有する)、メチルトリエトキシシラン73.43g(全シラン中に50モル%含有する)及びアセトン238.83gをフラスコに入れた。このフラスコに、冷却管を取り付け調製しておいた塩酸水溶液(0.01モル/リットル)51.95gを入れた滴下ロートをセットし、室温下で塩酸水溶液をゆっくり滴下し数分攪拌した。その後オイルバスにて85℃で4時間反応させた。反応終了後、反応溶液の入ったフラスコを放冷してからエバポレーターにセットし、反応中生成したエタノールを除去して反応生成物(ポリシロキサン)を得た(式(1-1)に相当)。さらに、エバポレーターを用いてアセトンをプロピレングリコールモノメチルエーテルアセテートに置換した。尚、得られた反応生成物中の固形分は、焼成法により測定した結果、24.16質量%であった。また、得られた生成物(固形分)の分子量(Mw)は1400であった。その後、上記のようにして得られたポリシロキサンを表2の割合で混合し、孔径0.1μmのフィルターでろ過してパターン反転のための被覆用ポリシロキサン組成物。
テトラエトキシシラン(全シラン中に40モル%含有する)69.83g、メチルトリエトキシシラン89.64g(全シラン中に60モル%含有する)及びアセトン239.20gをフラスコに入れた。このフラスコに、冷却管を取り付け調製しておいた塩酸水溶液(0.01モル/リットル)51.34gを入れた滴下ロートをセットし、室温下で塩酸水溶液をゆっくり滴下し数分攪拌した。その後オイルバスにて85℃で4時間反応させた。反応終了後、反応溶液の入ったフラスコを放冷してからエバポレーターにセットし、反応中生成したエタノールを除去して反応生成物(ポリシロキサン)を得た(式(1-1)に相当)。さらに、エバポレーターを用いてアセトンをプロピレングリコールモノメチルエーテルアセテートに置換した。尚、得られた反応生成物中の固形分は、焼成法により測定した結果、23.55質量%であった。また、得られた生成物(固形分)の分子量(Mw)は1300であった。その後、上記のようにして得られたポリシロキサンを表2の割合で混合し、孔径0.1μmのフィルターでろ過してパターン反転のための被覆用ポリシロキサン組成物を得た。
テトラエトキシシラン81.05g(全シラン中に46.5モル%含有する)、メチルトリエトキシシラン69.37g(全シラン中に46.5モル%含有する)、ジメチルジエトキシシラン8.68g(全シラン中に7モル%含有する)及びアセトン238.66gをフラスコに入れた。このフラスコに、冷却管を取り付け調製しておいた塩酸水溶液(0.01モル/リットル)52.24gを入れた滴下ロートをセットし、室温下で塩酸水溶液をゆっくり滴下し数分攪拌した。その後オイルバスにて85℃で4時間反応させた。反応終了後、反応溶液の入ったフラスコを放冷してからエバポレーターにセットし、反応中生成したエタノールを除去して反応生成物(ポリシロキサン)を得た(式(1-2)に相当)。さらに、エバポレーターを用いてアセトンをプロピレングリコールモノメチルエーテルアセテートに置換した。尚、得られた反応生成物中の固形分は、焼成法により測定した結果、22.18質量%であった。また、得られた生成物(固形分)の分子量(Mw)は1300であった。その後、上記のようにして得られたポリシロキサンを表2の割合で混合し、孔径0.1μmのフィルターでろ過してパターン反転のための被覆用ポリシロキサン組成物を得た。
テトラエトキシシラン66.21g(全シラン中に37.5モル%含有する)、メチルトリエトキシシラン86.89g(全シラン中に57.5モル%含有する)、ジメチルジエトキシシラン6.28g(全シラン中に5モル%含有する)及びアセトン239.07gをフラスコに入れた。このフラスコに、冷却管を取り付け調製しておいた塩酸水溶液(0.01モル/リットル)51.54gを入れた滴下ロートをセットし、室温下で塩酸水溶液をゆっくり滴下し数分攪拌した。その後オイルバスにて85℃で4時間反応させた。反応終了後、反応溶液の入ったフラスコを放冷してからエバポレーターにセットし、反応中生成したエタノールを除去して反応生成物(ポリシロキサン)を得た(式(1-2)に相当)。さらに、エバポレーターを用いてアセトンをプロピレングリコールモノメチルエーテルアセテートに置換した。尚、得られた反応生成物中の固形分は、焼成法により測定した結果、29.94質量%であった。また、得られた生成物(固形分)の分子量(Mw)は1200であった。その後、上記のようにして得られたポリシロキサンを表1、2の割合で混合し、孔径0.1μmのフィルターでろ過してパターン反転のための被覆用ポリシロキサン組成物を得た。
テトラエトキシシラン49.42g(全シラン中に27.5モル%含有する)、メチルトリエトキシシラン103.82g(全シラン中に67.5モル%含有する)、ジメチルジエトキシシラン6.40g(全シラン中に5モル%含有する)及びアセトン239.45gをフラスコに入れた。このフラスコに、冷却管を取り付け調製しておいた塩酸水溶液(0.01モル/リットル)50.91gを入れた滴下ロートをセットし、室温下で塩酸水溶液をゆっくり滴下し数分攪拌した。その後オイルバスにて85℃で4時間反応させた。反応終了後、反応溶液の入ったフラスコを放冷してからエバポレーターにセットし、反応中生成したエタノールを除去して反応生成物(ポリシロキサン)を得た(式(1-2)に相当)。さらに、エバポレーターを用いてアセトンをプロピレングリコールモノメチルエーテルアセテートに置換した。尚、得られた反応生成物中の固形分は、焼成法により測定した結果、29.28質量%であった。また、得られた生成物(固形分)の分子量(Mw)は1200であった。その後、上記のようにして得られたポリシロキサンを表2の割合で混合し、孔径0.1μmのフィルターでろ過してパターン反転のための被覆用ポリシロキサン組成物を得た。
テトラエトキシシラン32.02g(全シラン中に17.5モル%含有する)、メチルトリエトキシシラン121.37g(全シラン中に77.5モル%含有する)、ジメチルジエトキシシラン6.51g(全シラン中に5モル%含有する)及びアセトン239.85gをフラスコに入れた。このフラスコに、冷却管を取り付け調製しておいた塩酸水溶液(0.01モル/リットル)50.25gを入れた滴下ロートをセットし、室温下で塩酸水溶液をゆっくり滴下し数分攪拌した。その後オイルバスにて85℃で4時間反応させた。反応終了後、反応溶液の入ったフラスコを放冷してからエバポレーターにセットし、反応中生成したエタノールを除去して反応生成物(ポリシロキサン)を得た(式(1-2)に相当)。さらに、エバポレーターを用いてアセトンをプロピレングリコールモノメチルエーテルアセテートに置換した。尚、得られた反応生成物中の固形分は、焼成法により測定した結果、27.70質量%であった。また、得られた生成物(固形分)の分子量(Mw)は1100であった。その後、上記のようにして得られたポリシロキサンを表2の割合で混合し、孔径0.1μmのフィルターでろ過してパターン反転のための被覆用ポリシロキサン組成物を得た。
テトラエトキシシラン46.87g(全シラン中に40.0モル%含有する)、メチルトリエトキシシラン40.12g(全シラン中に40.0モル%含有する)、ビニルトリメトキシシラン16.68g(全シラン中に40.0モル%含有する)及びアセトン155.50gをフラスコに入れた。このフラスコに、冷却管を取り付け調製しておいた塩酸水溶液(0.01モル/リットル)34.46gを入れた滴下ロートをセットし、室温下で塩酸水溶液をゆっくり滴下し数分攪拌した。その後オイルバスにて85℃で4時間反応させた。反応終了後、反応溶液の入ったフラスコを放冷してからエバポレーターにセットし、反応中生成したエタノールを除去して反応生成物(ポリシロキサン)を得た(式(1-3)に相当)。さらに、エバポレーターを用いてアセトンをプロピレングリコールモノメチルエーテルアセテートに置換した。尚、得られた反応生成物中の固形分は、焼成法により測定した結果、22.40質量%であった。また、得られた生成物(固形分)の分子量(Mw)は1200であった。その後、上記のようにして得られたポリシロキサンを表2の割合で混合し、孔径0.1μmのフィルターでろ過してパターン反転のための被覆用ポリシロキサン組成物を得た。
テトラエトキシシラン41.67g(全シラン中に40.0モル%含有する)、メチルトリエトキシシラン26.75g(全シラン中に30.0モル%含有する)、フェニルトリメトキシシラン26.75g(全シラン中に30.0モル%含有する)及びアセトン147.23gをフラスコに入れた。このフラスコに、冷却管を取り付け調製しておいた塩酸水溶液(0.01モル/リットル)30.63gを入れた滴下ロートをセットし、室温下で塩酸水溶液をゆっくり滴下し数分攪拌した。その後オイルバスにて85℃で4時間反応させた。反応終了後、反応溶液の入ったフラスコを放冷してからエバポレーターにセットし、反応中生成したエタノールを除去して反応生成物(ポリシロキサン)を得た(式(1-4)に相当)。さらに、エバポレーターを用いてアセトンをプロピレングリコールモノメチルエーテルアセテートに置換した。尚、得られた反応生成物中の固形分は、焼成法により測定した結果、24.50質量%であった。また、得られた生成物(固形分)の分子量(Mw)は1100であった。その後、上記のようにして得られたポリシロキサンを表2の割合で混合し、孔径0.1μmのフィルターでろ過してパターン反転のための被覆用ポリシロキサン組成物を得た。
ビニルトリメトキシシラン92.64g(全シラン中に100.0モル%含有する)及びプロピレングリコールモノメチルエーテルアセテート138.97gをフラスコに入れた。このフラスコに、冷却管を取り付け調製しておいた塩酸水溶液(0.01モル/リットル)33.79gを入れた滴下ロートをセットし、室温下で塩酸水溶液をゆっくり滴下し数分攪拌した。その後オイルバスにて85℃で14時間反応させた。反応終了後、反応溶液の入ったフラスコを放冷してからエバポレーターにセットし、反応中生成したエタノールを除去して反応生成物(ポリシロキサン)を得た(式(1-5)に相当)。尚、得られた反応生成物中の固形分は、焼成法により測定した結果、19.80質量%であった。また、得られた生成物(固形分)の分子量(Mw)は3000であった。その後、上記のようにして得られたポリシロキサンを表2の割合で混合し、孔径0.1μmのフィルターでろ過してパターン反転のための被覆用ポリシロキサン組成物を得た。
撹拌子、温度計、冷却管を備えた500mlのフラスコ中に、17.70gの35重量%テトラメチルアンモニウムヒドロキシド水溶液、118.93gのイソプロパノールを入れ、反応溶媒を調製した。また、12.0g(全シラン中に20モル%含有する)の(4-(1-エトキシエトキシ)フェニル)トリメトキシシラン、29.88g(全シラン中に80モル%含有する)のメチルトリエトキシシラン、7.78gのイソプロパノールの混合溶液を調製した。反応溶媒をマグネチックスターラーにて撹拌しながら、室温にて混合溶液を反応溶媒に滴下した。添加後、オイルバスで40℃に維持しながら240分反応させた後、室温まで冷却し、反応液に酢酸エチル251mlを加えて希釈した。0.2モル%塩酸を加えて中和し、2層に分離した水層を除去した。残った有機層をさらに、水125mlで3回水洗した。得られた有機層にプロピレングリコールモノメチルエーテル210gを加え、酢酸エチル、イソプロパノール、メタノール、エタノール、水を減圧留去し、濃縮して加水分解縮合物(ポリシロキサン)プロピレングリコールモノメチルエーテル溶液を得た。得られたポリマーは(式(1-6)に相当)し、GPCによる分子量(Mw)はポリスチレン換算で1600であった。その後、上記のようにして得られたポリシロキサンを表3の割合で混合し、孔径0.1μmのフィルターでろ過してパターン反転のための被覆用ポリシロキサン組成物を得た。
テトラエトキシシラン137.64g(全シラン中に85モル%含有する)、メチルトリエトキシシラン20.79g(全シラン中に15モル%含有する)及びアセトン237.64gをフラスコに入れた。このフラスコに、冷却管を取り付け調製しておいた塩酸水溶液(0.01モル/リットル)53.93gを入れた滴下ロートをセットし、室温下で塩酸水溶液をゆっくり滴下し数分攪拌した。その後オイルバスにて85℃で4時間反応させた。反応終了後、反応溶液の入ったフラスコを放冷してからエバポレーターにセットし、反応中生成したエタノールを除去して反応生成物(ポリシロキサン)を得た(式(1-1)に相当)。さらに、エバポレーターを用いてアセトンをプロピレングリコールモノメチルエーテルアセテートに置換した。尚、得られた反応生成物中の固形分は、焼成法により測定した結果、20.22質量%であった。また、得られた生成物(固形分)の分子量(Mw)は1400であった。その後、上記のようにして得られたポリシロキサンを表2の割合で混合し、孔径0.1μmのフィルターでろ過してパターン反転のための被覆用ポリシロキサン組成物を得た。
テトラエトキシシラン130.59g(全シラン中に80モル%含有する)、メチルトリエトキシシラン27.94g(全シラン中に20モル%含有する)及びアセトン237.81gをフラスコに入れた。このフラスコに、冷却管を取り付け調製しておいた塩酸水溶液(0.01モル/リットル)53.66gを入れた滴下ロートをセットし、室温下で塩酸水溶液をゆっくり滴下し数分攪拌した。その後オイルバスにて85℃で4時間反応させた。反応終了後、反応溶液の入ったフラスコを放冷してからエバポレーターにセットし、反応中生成したエタノールを除去して反応生成物(ポリシロキサン)を得た(式(1-1)に相当)。さらに、エバポレーターを用いてアセトンをプロピレングリコールモノメチルエーテルアセテートに置換した。尚、得られた反応生成物中の固形分は、焼成法により測定した結果、25.47質量%であった。また、得られた生成物(固形分)の分子量(Mw)は1400であった。その後、上記のようにして得られたポリシロキサンを表2の割合で混合し、孔径0.1μmのフィルターでろ過してパターン反転のための被覆用ポリシロキサン組成物を得た。
上述したとおり、上記合成例1乃至12、比較合成例1乃至2で得られたポリシロキサン、酸、硬化触媒、添加剤、溶媒、水を表1乃至3に示す割合で混合し、0.1μmのフッ素樹脂製のフィルターで濾過することによって、被覆用ポリシロキサン組成物の溶液をそれぞれ調製した。表1乃至3中のポリマーの添加割合はポリマー溶液の添加量ではなく、ポリマー自体の添加量を示した。
表1乃至3中でマレイン酸はMA、ベンジルトリエチルアンモニウムクロリドはBTEAC、N-(3-トリエトキシシリルプロピル)-4,5-ジヒドロイミダゾールはIMIDTEOS、トリフェニルスルホニウム硝酸塩はTPSNO3、マレイン酸モノトリフェニルスルフォニウムはTPSMA、トリフェニルスルホニウムトリフルオロ酢酸塩はTPSTFA、トリフェニルスルホニウムクロリドはTPSCl、トリフェニルスルホニウムカンファースルホン酸塩はTPSCS、トリフェニルスルホニウムトリフルオロメタンスルホン酸塩はTPSTf、ノナフルオロブタンスルホン酸トリフェニルスルホニウムはTPSNf、トリフェニルスルホニウムアダマンタンカルボキシ-1,1,2-トリフルオロブタンスルホン酸塩はTPSAdTF、ジヒドロキシフェニルフェニルスルホニウムpトルエンスルホン酸塩はDHTPPSpTS、ビスフェニルスルホンはBPS、テトラメトキシメチルグリコールウリル(架橋性化合物、三井サイテック(株)製、商品名パウダーリンク1174)をPL-LI、ピリジニウム-p-トルエンスルホン酸をPyPTS、プロピレングリコールモノメチルエーテルアセテートはPGMEA、プロピレングリコールモノエチルエーテルはPGEE、プロピレングリコールモノメチルエーテルはPGME、ジエチレングリコールジエチルエーテルはDEGと略した。水は超純水を用いた。各添加量は質量部で示した。
実施例1乃至29、比較例1乃至2における各被覆用ポリシロキサン組成物について、下記のように被覆性能評価を行った。その評価結果を表4乃至5に示す。
2:半導体基板
3:有機下層膜
4:シリコンハードマスク
5:レジスト膜
6、8:ポリシロキサン組成物膜
7:段差基板
Claims (7)
- 半導体基板上に有機下層膜を形成する工程(1)、その上にシリコンハードマスク形成組成物を塗布し焼成しシリコンハードマスクを形成する工程(2)、前記シリコンハードマスクの上にレジスト組成物を塗布しレジスト膜を形成する工程(3)、前記レジスト膜を露光し、露光後に該レジスト膜を現像しレジストパターンを得る工程(4)、前記レジストパターンによりシリコンハードマスクをエッチングする工程(5)、パターン化されたシリコンハードマスクにより有機下層膜をエッチングしパターン化された有機下層膜を形成する工程(6)、前記パターン化された有機下層膜の上に被覆用ポリシロキサン組成物を塗布しエッチバックにより該有機下層膜の上面を露出させる工程(7)、並びに前記有機下層膜をエッチングしてパターンを反転する工程(8)からなるSOCパターン上でのパターン反転方法に用いられ、前記被覆用ポリシロキサン組成物は全シラン中、2つ乃至3つの加水分解性基を有する加水分解性シランを30乃至100モル%となる割合で含む加水分解性シランの加水分解縮合物を含む被覆用ポリシロキサン組成物。
- 加水分解性シランが式(1):
(式(1)中、R1はアルキル基、アリール基、ハロゲン化アルキル基、ハロゲン化アリール基、アルコキシアリール基、アルケニル基、又はエポキシ基、アクリロイル基、メタクリロイル基、メルカプト基、もしくはシアノ基を有する有機基で且つSi-C結合によりケイ素原子と結合しているものであり、R2はアルコキシ基、アシルオキシ基、又はハロゲン基を示し、aは0乃至2の整数を示す。)で示され、かつ全シラン中に、式(1)中aが1乃至2である加水分解性シランを30乃至100モル%及び、式(1)中aが0である加水分解性シランを0乃至70モル%となる割合で含むものである請求項1に記載の被覆用ポリシロキサン組成物。 - 全シラン中に式(1)(式中、aが1乃至2である。)で示される加水分解性シランを100モル%となる割合で含む加水分解性シランの加水分解縮合物と、2乃至6個のメトキシメチル基を有する架橋性化合物とを含む請求項2に記載の被覆用ポリシロキサン組成物。
- 式(1)中、R1がメチル基又はハロゲン基若しくはアルコキシ基で置換されていても良いフェニル基である請求項2又は請求項3に記載の被覆用ポリシロキサン組成物。
- 加水分解性シランの加水分解が、加水分解触媒として酸、又は塩基を用いて行われる請求項1乃至請求項4のいずれか1項に記載の被覆用ポリシロキサン組成物。
- 被覆用ポリシロキサン組成物が更に水、酸、及び硬化触媒からなる群から選ばれた一つ以上を含む請求項1乃至請求項5のいずれか1項に記載の被覆用ポリシロキサン組成物。
- 半導体基板上に有機下層膜を形成する工程(1)、その上にシリコンハードマスク形成組成物を塗布し焼成しシリコンハードマスクを形成する工程(2)、前記シリコンハードマスクの上にレジスト組成物を塗布しレジスト膜を形成する工程(3)、前記レジスト膜を露光し、露光後に該レジスト膜を現像しレジストパターンを得る工程(4)、前記レジストパターンによりシリコンハードマスクをエッチングする工程(5)、パターン化されたシリコンハードマスクにより有機下層膜をエッチングしパターン化された有機下層膜を形成する工程(6)、前記パターン化された有機下層膜の上に請求項1乃至請求項6のいずれか1項に記載の被覆用ポリシロキサン組成物を塗布し該有機下層膜のパターン間を該ポリシロキサン組成物で埋め込み、エッチバックにより該有機下層膜の上面を露出させる工程(7)、前記有機下層膜をエッチングしてパターンを反転する工程(8)を含む半導体装置の製造方法。
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