WO2013044096A3 - Vertical switching formations for esd protection - Google Patents

Vertical switching formations for esd protection Download PDF

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Publication number
WO2013044096A3
WO2013044096A3 PCT/US2012/056663 US2012056663W WO2013044096A3 WO 2013044096 A3 WO2013044096 A3 WO 2013044096A3 US 2012056663 W US2012056663 W US 2012056663W WO 2013044096 A3 WO2013044096 A3 WO 2013044096A3
Authority
WO
WIPO (PCT)
Prior art keywords
esd protection
vertical switching
formations
switching formations
vertical
Prior art date
Application number
PCT/US2012/056663
Other languages
French (fr)
Other versions
WO2013044096A2 (en
Inventor
Robert Fleming
Michael Glickman
Bhret Graydon
Junjun Wu
Daniel Vasquez
Original Assignee
Shocking Technologies, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shocking Technologies, Inc. filed Critical Shocking Technologies, Inc.
Priority to EP12834081.7A priority Critical patent/EP2758992A4/en
Priority to CN201280056095.8A priority patent/CN103999217B/en
Priority to KR1020147010416A priority patent/KR101923760B1/en
Priority to JP2014532024A priority patent/JP2014535157A/en
Publication of WO2013044096A2 publication Critical patent/WO2013044096A2/en
Publication of WO2013044096A3 publication Critical patent/WO2013044096A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1013—Thin film varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/041—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using a short-circuiting device
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
    • H05K1/0257—Overvoltage protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/044—Physical layout, materials not provided for elsewhere
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
    • H05K1/0257—Overvoltage protection
    • H05K1/0259—Electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/07—Electric details
    • H05K2201/073—High voltage adaptations
    • H05K2201/0738—Use of voltage responsive materials, e.g. voltage switchable dielectric or varistor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Structure Of Printed Boards (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

Embodiments disclosed herein generally relate to structures, methods and devices employing a voltage switchable dielectric material to achieve vertical and/or dual switching protection against ESD and other overvoltage events.
PCT/US2012/056663 2011-09-21 2012-09-21 Vertical switching formations for esd protection WO2013044096A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP12834081.7A EP2758992A4 (en) 2011-09-21 2012-09-21 Vertical switching formations for esd protection
CN201280056095.8A CN103999217B (en) 2011-09-21 2012-09-21 For the construction of the Vertical Handover of ESD protections
KR1020147010416A KR101923760B1 (en) 2011-09-21 2012-09-21 Vertical switching formations for esd protection
JP2014532024A JP2014535157A (en) 2011-09-21 2012-09-21 Vertical switching configuration for ESD protection

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161537490P 2011-09-21 2011-09-21
US61/537,490 2011-09-21

Publications (2)

Publication Number Publication Date
WO2013044096A2 WO2013044096A2 (en) 2013-03-28
WO2013044096A3 true WO2013044096A3 (en) 2013-07-04

Family

ID=47915104

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/056663 WO2013044096A2 (en) 2011-09-21 2012-09-21 Vertical switching formations for esd protection

Country Status (6)

Country Link
EP (1) EP2758992A4 (en)
JP (3) JP2014535157A (en)
KR (1) KR101923760B1 (en)
CN (1) CN103999217B (en)
TW (1) TWI473542B (en)
WO (1) WO2013044096A2 (en)

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US9214433B2 (en) * 2013-05-21 2015-12-15 Xilinx, Inc. Charge damage protection on an interposer for a stacked die assembly
US9401353B2 (en) 2014-08-08 2016-07-26 Qualcomm Incorporated Interposer integrated with 3D passive devices
US9583481B2 (en) 2014-09-30 2017-02-28 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device comprising plurality of conductive portions disposed within wells and a nanowire coupled to conductive portion
TWI558290B (en) * 2015-08-24 2016-11-11 欣興電子股份有限公司 Manufacturing method of circuit board
KR102452045B1 (en) 2017-12-28 2022-10-07 (주)아모텍 Device for protecting overvoltage and method for manufacturing the same
KR102576106B1 (en) 2018-06-19 2023-09-08 주식회사 아모텍 Device for protecting overvoltag
KR20200028622A (en) 2018-09-07 2020-03-17 주식회사 아모텍 Device for reducing noise
KR102586946B1 (en) 2018-10-23 2023-10-10 주식회사 아모텍 Device for protecting overvoltage
KR20200073643A (en) 2018-12-14 2020-06-24 삼성전자주식회사 Semiconductor package and method of manufacturing semiconductor package
CN110055126A (en) * 2019-05-31 2019-07-26 青岛科技大学 A kind of MOF-Ti/TiOx core-shell type nano composite particles ER fluid and preparation method thereof
CN110794273A (en) * 2019-11-19 2020-02-14 哈尔滨理工大学 Potential time domain spectrum testing system with high-voltage driving protection electrode
IT202000016699A1 (en) * 2020-07-09 2022-01-09 Ingelva Srl EQUIPMENT AND METHOD FOR THE PREVENTION AND DAMPING OF VOLTAGE AND CURRENT PEAKS OF EXTERNAL AND INTERNAL ORIGIN FOR MEDIUM, HIGH AND VERY HIGH VOLTAGE POWER LINES

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US7417194B2 (en) * 2003-02-13 2008-08-26 Electronic Polymers, Inc. ESD protection devices and methods of making same using standard manufacturing processes
WO2008153584A1 (en) * 2007-06-13 2008-12-18 Shocking Technologies, Inc. System and method for including protective voltage switchable dielectric material in the design or simulation of substrate devices
US20100187006A1 (en) * 2009-01-27 2010-07-29 Lex Kosowsky Substrates Having Voltage Switchable Dielectric Materials
US20100243302A1 (en) * 2009-03-26 2010-09-30 Lex Kosowsky Components having voltage switchable dielectric materials
US20110211319A1 (en) * 2010-02-26 2011-09-01 Lex Kosowsky Electric discharge protection for surface mounted and embedded components

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US2953309A (en) 1958-05-29 1960-09-20 Harry W Moore Apparatus for and method of winding stator coils
US20120195018A1 (en) * 2005-11-22 2012-08-02 Lex Kosowsky Wireless communication device using voltage switchable dielectric material
US7695644B2 (en) * 1999-08-27 2010-04-13 Shocking Technologies, Inc. Device applications for voltage switchable dielectric material having high aspect ratio particles
WO2001017320A1 (en) * 1999-08-27 2001-03-08 Lex Kosowsky Current carrying structure using voltage switchable dielectric material
US7825491B2 (en) * 2005-11-22 2010-11-02 Shocking Technologies, Inc. Light-emitting device using voltage switchable dielectric material
JP2001237586A (en) * 2000-02-25 2001-08-31 Matsushita Electric Ind Co Ltd Circuit board, module incorporating circuit part, and manufacturing method thereof
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KR100576872B1 (en) * 2004-09-17 2006-05-10 삼성전기주식회사 Nitride semiconductor light emitting diode with esd protection capacity
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Also Published As

Publication number Publication date
TW201330710A (en) 2013-07-16
JP6860718B2 (en) 2021-04-21
CN103999217A (en) 2014-08-20
JP2014535157A (en) 2014-12-25
EP2758992A4 (en) 2015-08-12
KR101923760B1 (en) 2018-11-29
TWI473542B (en) 2015-02-11
CN103999217B (en) 2017-06-06
WO2013044096A2 (en) 2013-03-28
EP2758992A2 (en) 2014-07-30
KR20140110838A (en) 2014-09-17
JP2020080419A (en) 2020-05-28
JP2017152711A (en) 2017-08-31

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