WO2011031589A3 - Methods and arrangement for detecting a wafer-released event within a plasma processing chamber - Google Patents

Methods and arrangement for detecting a wafer-released event within a plasma processing chamber Download PDF

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Publication number
WO2011031589A3
WO2011031589A3 PCT/US2010/047380 US2010047380W WO2011031589A3 WO 2011031589 A3 WO2011031589 A3 WO 2011031589A3 US 2010047380 W US2010047380 W US 2010047380W WO 2011031589 A3 WO2011031589 A3 WO 2011031589A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
processing chamber
wafer
detecting
arrangement
Prior art date
Application number
PCT/US2010/047380
Other languages
French (fr)
Other versions
WO2011031589A2 (en
Inventor
John C. Valcore Jr.
Mark Zerella
Original Assignee
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/557,387 external-priority patent/US8797705B2/en
Priority claimed from US12/557,381 external-priority patent/US20110060442A1/en
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Priority to JP2012528824A priority Critical patent/JP2013504873A/en
Priority to SG2012009650A priority patent/SG178374A1/en
Priority to CN2010800389607A priority patent/CN102598237A/en
Publication of WO2011031589A2 publication Critical patent/WO2011031589A2/en
Publication of WO2011031589A3 publication Critical patent/WO2011031589A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

A method for identifying an optimal time for mechanically removing a substrate from a lower electrode in a processing chamber of a plasma processing system is provided. The method includes employing a set of sensors to monitor a set of electrical characteristics of a plasma, wherein the plasma is formed over the substrate during a dechuck event. The method also includes sending processing data about the set of electrical characteristics to a data collection device. The method further includes comparing the processing data against a set of threshold values. The method yet also includes, if the processing data traverses the threshold values, removing the substrate from the lower electrode since a substrate-released event has occurred.
PCT/US2010/047380 2009-09-10 2010-08-31 Methods and arrangement for detecting a wafer-released event within a plasma processing chamber WO2011031589A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012528824A JP2013504873A (en) 2009-09-10 2010-08-31 Method and apparatus for detecting a wafer release event in a plasma processing chamber
SG2012009650A SG178374A1 (en) 2009-09-10 2010-08-31 Methods and arrangement for detecting a wafer-released event within a plasma processing chamber
CN2010800389607A CN102598237A (en) 2009-09-10 2010-08-31 Methods and arrangement for detecting a wafer-released event within a plasma processing chamber

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/557,387 US8797705B2 (en) 2009-09-10 2009-09-10 Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential
US12/557,381 2009-09-10
US12/557,387 2009-09-10
US12/557,381 US20110060442A1 (en) 2009-09-10 2009-09-10 Methods and arrangement for detecting a wafer-released event within a plasma processing chamber

Publications (2)

Publication Number Publication Date
WO2011031589A2 WO2011031589A2 (en) 2011-03-17
WO2011031589A3 true WO2011031589A3 (en) 2011-06-03

Family

ID=43733060

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2010/047382 WO2011031590A2 (en) 2009-09-10 2010-08-31 Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential
PCT/US2010/047380 WO2011031589A2 (en) 2009-09-10 2010-08-31 Methods and arrangement for detecting a wafer-released event within a plasma processing chamber

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2010/047382 WO2011031590A2 (en) 2009-09-10 2010-08-31 Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential

Country Status (5)

Country Link
JP (2) JP2013504873A (en)
KR (2) KR20120073227A (en)
CN (2) CN102484086B (en)
SG (3) SG178374A1 (en)
WO (2) WO2011031590A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8520360B2 (en) * 2011-07-19 2013-08-27 Lam Research Corporation Electrostatic chuck with wafer backside plasma assisted dechuck
JP6789099B2 (en) * 2016-12-26 2020-11-25 東京エレクトロン株式会社 Measurement method, static elimination method and plasma processing equipment
US10770257B2 (en) * 2018-07-20 2020-09-08 Asm Ip Holding B.V. Substrate processing method
US11437262B2 (en) 2018-12-12 2022-09-06 Applied Materials, Inc Wafer de-chucking detection and arcing prevention
JP7450512B2 (en) * 2020-10-07 2024-03-15 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6307728B1 (en) * 2000-01-21 2001-10-23 Applied Materials, Inc. Method and apparatus for dechucking a workpiece from an electrostatic chuck
US20030038114A1 (en) * 1998-09-30 2003-02-27 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
US20030210510A1 (en) * 2002-05-07 2003-11-13 Hann Thomas C. Dynamic dechucking
US7137352B2 (en) * 2000-12-28 2006-11-21 Renesas Technology Corp. Plasma processing system in which wafer is retained by electrostatic chuck

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck
JP3125593B2 (en) * 1994-09-09 2001-01-22 株式会社日立製作所 Electrostatic suction device and method
JPH10163306A (en) * 1996-12-04 1998-06-19 Sony Corp Method and apparatus for manufacturing semiconductor device
JPH11260897A (en) * 1998-03-12 1999-09-24 Matsushita Electric Ind Co Ltd Method and apparatus handling substrate, and vacuum chucking and inspecting method and apparatus used therefor
US7218503B2 (en) * 1998-09-30 2007-05-15 Lam Research Corporation Method of determining the correct average bias compensation voltage during a plasma process
US6790375B1 (en) * 1998-09-30 2004-09-14 Lam Research Corporation Dechucking method and apparatus for workpieces in vacuum processors
US6570752B2 (en) * 1999-12-28 2003-05-27 Nikon Corporation Wafer chucks and the like including substrate-adhesion detection and adhesion correction
JP3702220B2 (en) * 2001-11-29 2005-10-05 株式会社東芝 Plasma management method
JP4313656B2 (en) * 2003-11-19 2009-08-12 パナソニック株式会社 Manufacturing method of semiconductor device
US20050212450A1 (en) * 2004-03-16 2005-09-29 Scientific Systems Research Limited Method and system for detecting electrical arcing in a plasma process powered by an AC source
KR100653707B1 (en) * 2004-10-21 2006-12-04 삼성전자주식회사 Plasma processing method of plasma processing apparatus
JP4884811B2 (en) * 2006-03-20 2012-02-29 三菱重工業株式会社 Glass substrate electrostatic adsorption device and adsorption / desorption method thereof
KR101394337B1 (en) * 2006-08-30 2014-05-13 엘아이지에이디피 주식회사 Electrostratic Chuck
JP4646941B2 (en) * 2007-03-30 2011-03-09 東京エレクトロン株式会社 Substrate processing apparatus and method for stabilizing state in processing chamber

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030038114A1 (en) * 1998-09-30 2003-02-27 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
US6307728B1 (en) * 2000-01-21 2001-10-23 Applied Materials, Inc. Method and apparatus for dechucking a workpiece from an electrostatic chuck
US7137352B2 (en) * 2000-12-28 2006-11-21 Renesas Technology Corp. Plasma processing system in which wafer is retained by electrostatic chuck
US20030210510A1 (en) * 2002-05-07 2003-11-13 Hann Thomas C. Dynamic dechucking

Also Published As

Publication number Publication date
WO2011031589A2 (en) 2011-03-17
CN102598237A (en) 2012-07-18
CN102484086B (en) 2014-10-15
JP5735513B2 (en) 2015-06-17
KR20120073227A (en) 2012-07-04
WO2011031590A3 (en) 2011-06-30
SG178372A1 (en) 2012-03-29
JP2013504874A (en) 2013-02-07
SG178374A1 (en) 2012-03-29
WO2011031590A2 (en) 2011-03-17
CN102484086A (en) 2012-05-30
KR20120073226A (en) 2012-07-04
SG10201405047VA (en) 2014-10-30
JP2013504873A (en) 2013-02-07

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