WO2011002811A3 - Arrangement for identifying uncontrolled events at the process module level and methods thereof - Google Patents

Arrangement for identifying uncontrolled events at the process module level and methods thereof Download PDF

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Publication number
WO2011002811A3
WO2011002811A3 PCT/US2010/040478 US2010040478W WO2011002811A3 WO 2011002811 A3 WO2011002811 A3 WO 2011002811A3 US 2010040478 W US2010040478 W US 2010040478W WO 2011002811 A3 WO2011002811 A3 WO 2011002811A3
Authority
WO
WIPO (PCT)
Prior art keywords
fast transient
transient event
situ fast
situ
potential
Prior art date
Application number
PCT/US2010/040478
Other languages
French (fr)
Other versions
WO2011002811A2 (en
Inventor
Luc Albarede
Vijayakumar C. Venugopal
Original Assignee
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/555,674 external-priority patent/US8983631B2/en
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Priority to JP2012518589A priority Critical patent/JP2012532464A/en
Priority to CN201080029024.XA priority patent/CN102473590B/en
Priority to SG2011085172A priority patent/SG176567A1/en
Priority to KR1020117031592A priority patent/KR101741274B1/en
Publication of WO2011002811A2 publication Critical patent/WO2011002811A2/en
Publication of WO2011002811A3 publication Critical patent/WO2011002811A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing And Monitoring For Control Systems (AREA)
  • Chemical Vapour Deposition (AREA)
  • General Factory Administration (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Management, Administration, Business Operations System, And Electronic Commerce (AREA)
  • Combined Controls Of Internal Combustion Engines (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Arrangements For Transmission Of Measured Signals (AREA)
  • Plasma Technology (AREA)
  • Complex Calculations (AREA)
  • Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)

Abstract

A method for detecting an in-situ fast transient event within a processing chamber during substrate processing is provided. The method includes a set of sensors comparing a data set to a set of criteria (in-situ fast transient events) to determine if the first data set includes a potential in-situ fast transient event. If the first data set includes the potential in-situ fast transient event, the method also includes saving an electrical signature that occurs in a time period during which the potential in-situ fast transient event occurs. The method further includes comparing the electrical signature against a set of stored arc signatures. If a match is determined, the method yet also includes classifying the electrical signature as a first in-situ fast transient event and determining a severity level for the first in-situ fast transient event based on a predefined set of threshold ranges.
PCT/US2010/040478 2009-06-30 2010-06-29 Arrangement for identifying uncontrolled events at the process module level and methods thereof WO2011002811A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012518589A JP2012532464A (en) 2009-06-30 2010-06-29 Configuration and method for identifying uncontrollable events at the process module level
CN201080029024.XA CN102473590B (en) 2009-06-30 2010-06-29 Methods and arrangements for in-situ process monitoring and control for plasma processing tools
SG2011085172A SG176567A1 (en) 2009-06-30 2010-06-29 Arrangement for identifying uncontrolled events at the process module level and methods thereof
KR1020117031592A KR101741274B1 (en) 2009-06-30 2010-06-29 Arrangement for identifying uncontrolled events at the process module level and methods thereof

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US22210209P 2009-06-30 2009-06-30
US22202409P 2009-06-30 2009-06-30
US61/222,102 2009-06-30
US61/222,024 2009-06-30
US12/555,674 US8983631B2 (en) 2009-06-30 2009-09-08 Arrangement for identifying uncontrolled events at the process module level and methods thereof
US12/555,674 2009-09-08

Publications (2)

Publication Number Publication Date
WO2011002811A2 WO2011002811A2 (en) 2011-01-06
WO2011002811A3 true WO2011002811A3 (en) 2011-02-24

Family

ID=43411705

Family Applications (5)

Application Number Title Priority Date Filing Date
PCT/US2010/040477 WO2011002810A2 (en) 2009-06-30 2010-06-29 Methods for constructing an optimal endpoint algorithm
PCT/US2010/040478 WO2011002811A2 (en) 2009-06-30 2010-06-29 Arrangement for identifying uncontrolled events at the process module level and methods thereof
PCT/US2010/040456 WO2011002800A2 (en) 2009-06-30 2010-06-29 Methods and arrangements for in-situ process monitoring and control for plasma processing tools
PCT/US2010/040468 WO2011002804A2 (en) 2009-06-30 2010-06-29 Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber
PCT/US2010/040465 WO2011002803A2 (en) 2009-06-30 2010-06-29 Methods and apparatus for predictive preventive maintenance of processing chambers

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2010/040477 WO2011002810A2 (en) 2009-06-30 2010-06-29 Methods for constructing an optimal endpoint algorithm

Family Applications After (3)

Application Number Title Priority Date Filing Date
PCT/US2010/040456 WO2011002800A2 (en) 2009-06-30 2010-06-29 Methods and arrangements for in-situ process monitoring and control for plasma processing tools
PCT/US2010/040468 WO2011002804A2 (en) 2009-06-30 2010-06-29 Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber
PCT/US2010/040465 WO2011002803A2 (en) 2009-06-30 2010-06-29 Methods and apparatus for predictive preventive maintenance of processing chambers

Country Status (6)

Country Link
JP (5) JP5624618B2 (en)
KR (5) KR101741272B1 (en)
CN (5) CN102473631B (en)
SG (5) SG176564A1 (en)
TW (5) TWI536193B (en)
WO (5) WO2011002810A2 (en)

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US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
KR102339317B1 (en) * 2013-12-13 2021-12-14 램 리써치 코포레이션 Rf impedance model based fault detection
US10192763B2 (en) * 2015-10-05 2019-01-29 Applied Materials, Inc. Methodology for chamber performance matching for semiconductor equipment
US10269545B2 (en) * 2016-08-03 2019-04-23 Lam Research Corporation Methods for monitoring plasma processing systems for advanced process and tool control
US9972478B2 (en) * 2016-09-16 2018-05-15 Lam Research Corporation Method and process of implementing machine learning in complex multivariate wafer processing equipment
US11067515B2 (en) * 2017-11-28 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for inspecting a wafer process chamber
CN108847381A (en) * 2018-05-25 2018-11-20 深圳市华星光电半导体显示技术有限公司 The method for testing substrate and extended testing system substrate service life
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Also Published As

Publication number Publication date
KR20120037420A (en) 2012-04-19
SG176564A1 (en) 2012-01-30
CN102473631A (en) 2012-05-23
TW201112302A (en) 2011-04-01
KR101708078B1 (en) 2017-02-17
TWI509375B (en) 2015-11-21
CN102474968B (en) 2015-09-02
JP2012532461A (en) 2012-12-13
CN102473631B (en) 2014-11-26
TW201108022A (en) 2011-03-01
CN102804353A (en) 2012-11-28
SG176147A1 (en) 2011-12-29
KR101741272B1 (en) 2017-05-29
JP5624618B2 (en) 2014-11-12
TW201129936A (en) 2011-09-01
JP2012532464A (en) 2012-12-13
CN102804929A (en) 2012-11-28
JP5693573B2 (en) 2015-04-01
WO2011002810A4 (en) 2011-06-03
JP5629770B2 (en) 2014-11-26
CN102473590A (en) 2012-05-23
WO2011002800A2 (en) 2011-01-06
TW201115288A (en) 2011-05-01
KR101741271B1 (en) 2017-05-29
TW201129884A (en) 2011-09-01
KR101741274B1 (en) 2017-05-29
WO2011002804A3 (en) 2011-03-03
KR20120037419A (en) 2012-04-19
WO2011002800A3 (en) 2011-04-07
JP2012532460A (en) 2012-12-13
KR101708077B1 (en) 2017-02-17
JP2012532463A (en) 2012-12-13
CN102473590B (en) 2014-11-26
KR20120047871A (en) 2012-05-14
SG176567A1 (en) 2012-01-30
CN102804353B (en) 2015-04-15
CN102474968A (en) 2012-05-23
JP2012532462A (en) 2012-12-13
TWI536193B (en) 2016-06-01
SG176566A1 (en) 2012-01-30
KR20120101293A (en) 2012-09-13
TWI484435B (en) 2015-05-11
TWI480917B (en) 2015-04-11
TWI495970B (en) 2015-08-11
WO2011002804A2 (en) 2011-01-06
WO2011002810A2 (en) 2011-01-06
KR20120037421A (en) 2012-04-19
JP5599882B2 (en) 2014-10-01
WO2011002811A2 (en) 2011-01-06
WO2011002803A3 (en) 2011-03-03
WO2011002810A3 (en) 2011-04-14
CN102804929B (en) 2015-11-25
SG176565A1 (en) 2012-01-30
WO2011002803A2 (en) 2011-01-06

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