WO2010033469A3 - Dielectric material treatment saystem and method of operating - Google Patents

Dielectric material treatment saystem and method of operating Download PDF

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Publication number
WO2010033469A3
WO2010033469A3 PCT/US2009/056871 US2009056871W WO2010033469A3 WO 2010033469 A3 WO2010033469 A3 WO 2010033469A3 US 2009056871 W US2009056871 W US 2009056871W WO 2010033469 A3 WO2010033469 A3 WO 2010033469A3
Authority
WO
WIPO (PCT)
Prior art keywords
saystem
operating
dielectric material
material treatment
low
Prior art date
Application number
PCT/US2009/056871
Other languages
French (fr)
Other versions
WO2010033469A2 (en
Inventor
Junjun Liu
Jacques Faguet
Eric M. Lee
Dorel I. Toma
Hongyu Yue
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/211,675 external-priority patent/US20100067886A1/en
Priority claimed from US12/211,598 external-priority patent/US20100065758A1/en
Priority claimed from US12/211,640 external-priority patent/US8895942B2/en
Priority claimed from US12/211,681 external-priority patent/US20100068897A1/en
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to KR1020117008718A priority Critical patent/KR101690804B1/en
Priority to CN200980136347.6A priority patent/CN102159330B/en
Priority to JP2011527032A priority patent/JP2012503313A/en
Publication of WO2010033469A2 publication Critical patent/WO2010033469A2/en
Publication of WO2010033469A3 publication Critical patent/WO2010033469A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
PCT/US2009/056871 2008-09-16 2009-09-14 Dielectric material treatment saystem and method of operating WO2010033469A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020117008718A KR101690804B1 (en) 2008-09-16 2009-09-14 Dielectric material treatment system and method of operating
CN200980136347.6A CN102159330B (en) 2008-09-16 2009-09-14 Dielectric material treatment system and method of operating
JP2011527032A JP2012503313A (en) 2008-09-16 2009-09-14 Dielectric material processing system and method of operating the system

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US12/211,675 US20100067886A1 (en) 2008-09-16 2008-09-16 Ir laser optics system for dielectric treatment module
US12/211,598 2008-09-16
US12/211,675 2008-09-16
US12/211,640 2008-09-16
US12/211,598 US20100065758A1 (en) 2008-09-16 2008-09-16 Dielectric material treatment system and method of operating
US12/211,640 US8895942B2 (en) 2008-09-16 2008-09-16 Dielectric treatment module using scanning IR radiation source
US12/211,681 2008-09-16
US12/211,681 US20100068897A1 (en) 2008-09-16 2008-09-16 Dielectric treatment platform for dielectric film deposition and curing

Publications (2)

Publication Number Publication Date
WO2010033469A2 WO2010033469A2 (en) 2010-03-25
WO2010033469A3 true WO2010033469A3 (en) 2010-05-14

Family

ID=42040085

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/056871 WO2010033469A2 (en) 2008-09-16 2009-09-14 Dielectric material treatment saystem and method of operating

Country Status (4)

Country Link
JP (1) JP2012503313A (en)
KR (1) KR101690804B1 (en)
CN (1) CN102159330B (en)
WO (1) WO2010033469A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120225568A1 (en) * 2011-03-03 2012-09-06 Tokyo Electron Limited Annealing method and annealing apparatus
CN102621107A (en) * 2012-03-09 2012-08-01 中国科学院长春光学精密机械与物理研究所 In-situ optical measurement device for aerospace material space environment irradiation measurement
CN104752304B (en) * 2013-12-31 2018-08-24 北京北方华创微电子装备有限公司 A kind of reaction chamber and plasma processing device
CN105336668B (en) * 2014-06-27 2020-09-08 中芯国际集成电路制造(上海)有限公司 Method for forming dielectric layer
CN104209254B (en) * 2014-08-15 2016-05-11 上海华力微电子有限公司 For the ultraviolet light polymerization process of porous low dielectric constant material
WO2016148855A1 (en) * 2015-03-19 2016-09-22 Applied Materials, Inc. Method and apparatus for reducing radiation induced change in semiconductor structures
KR102380710B1 (en) 2017-10-30 2022-03-29 어플라이드 머티어리얼스, 인코포레이티드 Multizone spot heating in EPI
KR102249802B1 (en) * 2018-07-13 2021-05-10 세메스 주식회사 Appparatus for processing substrate

Citations (7)

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US7090966B2 (en) * 2003-03-26 2006-08-15 Seiko Epson Corporation Process of surface treatment, surface treating device, surface treated plate, and electro-optic device, and electronic equipment
US20060249078A1 (en) * 2005-05-09 2006-11-09 Thomas Nowak High efficiency uv curing system
US20070105401A1 (en) * 2005-11-09 2007-05-10 Tokyo Electron Limited Multi-step system and method for curing a dielectric film
US20070109003A1 (en) * 2005-08-19 2007-05-17 Kla-Tencor Technologies Corp. Test Pads, Methods and Systems for Measuring Properties of a Wafer
US20080063809A1 (en) * 2006-09-08 2008-03-13 Tokyo Electron Limited Thermal processing system for curing dielectric films
US20080067425A1 (en) * 2006-03-17 2008-03-20 Applied Materials, Inc. Apparatus and method for exposing a substrate to uv radiation using asymmetric reflectors
US7405168B2 (en) * 2005-09-30 2008-07-29 Tokyo Electron Limited Plural treatment step process for treating dielectric films

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JPH0770535B2 (en) * 1986-06-25 1995-07-31 ソニー株式会社 Method for manufacturing semiconductor device
JPH01103824A (en) * 1988-06-24 1989-04-20 Fujitsu Ltd Laser annealing process
JPH0562924A (en) * 1991-09-04 1993-03-12 Sony Corp Laser annealing device
TW466772B (en) * 1997-12-26 2001-12-01 Seiko Epson Corp Method for producing silicon oxide film, method for making semiconductor device, semiconductor device, display, and infrared irradiating device
US6121130A (en) * 1998-11-16 2000-09-19 Chartered Semiconductor Manufacturing Ltd. Laser curing of spin-on dielectric thin films
CN1421904A (en) * 2001-09-06 2003-06-04 联华电子股份有限公司 Production process of film of low-dielectric constant material
KR100944379B1 (en) * 2003-06-02 2010-02-26 주성엔지니어링(주) Apparatus for wafer loading, and the method of wafer loading using the same
JP4361762B2 (en) * 2003-06-11 2009-11-11 東京エレクトロン株式会社 Heat treatment method
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Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7090966B2 (en) * 2003-03-26 2006-08-15 Seiko Epson Corporation Process of surface treatment, surface treating device, surface treated plate, and electro-optic device, and electronic equipment
US20060249078A1 (en) * 2005-05-09 2006-11-09 Thomas Nowak High efficiency uv curing system
US20070109003A1 (en) * 2005-08-19 2007-05-17 Kla-Tencor Technologies Corp. Test Pads, Methods and Systems for Measuring Properties of a Wafer
US7405168B2 (en) * 2005-09-30 2008-07-29 Tokyo Electron Limited Plural treatment step process for treating dielectric films
US20070105401A1 (en) * 2005-11-09 2007-05-10 Tokyo Electron Limited Multi-step system and method for curing a dielectric film
US20080067425A1 (en) * 2006-03-17 2008-03-20 Applied Materials, Inc. Apparatus and method for exposing a substrate to uv radiation using asymmetric reflectors
US20080063809A1 (en) * 2006-09-08 2008-03-13 Tokyo Electron Limited Thermal processing system for curing dielectric films

Also Published As

Publication number Publication date
KR101690804B1 (en) 2016-12-28
CN102159330A (en) 2011-08-17
KR20110081981A (en) 2011-07-15
CN102159330B (en) 2014-11-12
JP2012503313A (en) 2012-02-02
WO2010033469A2 (en) 2010-03-25

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