WO2010033469A2 - Dielectric material treatment saystem and method of operating - Google Patents
Dielectric material treatment saystem and method of operating Download PDFInfo
- Publication number
- WO2010033469A2 WO2010033469A2 PCT/US2009/056871 US2009056871W WO2010033469A2 WO 2010033469 A2 WO2010033469 A2 WO 2010033469A2 US 2009056871 W US2009056871 W US 2009056871W WO 2010033469 A2 WO2010033469 A2 WO 2010033469A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- radiation
- process module
- dielectric film
- radiation source
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 405
- 238000011282 treatment Methods 0.000 title description 22
- 239000003989 dielectric material Substances 0.000 title description 3
- 230000005855 radiation Effects 0.000 claims abstract description 500
- 239000000758 substrate Substances 0.000 claims abstract description 416
- 230000008569 process Effects 0.000 claims abstract description 379
- 230000003287 optical effect Effects 0.000 claims description 122
- 238000010438 heat treatment Methods 0.000 claims description 55
- 239000007789 gas Substances 0.000 claims description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 238000005229 chemical vapour deposition Methods 0.000 claims description 23
- 238000007493 shaping process Methods 0.000 claims description 16
- 238000004513 sizing Methods 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 238000012544 monitoring process Methods 0.000 claims description 10
- 238000007740 vapor deposition Methods 0.000 claims description 10
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 9
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 9
- 238000005286 illumination Methods 0.000 claims description 9
- 238000005086 pumping Methods 0.000 claims description 8
- 238000011065 in-situ storage Methods 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 6
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims 3
- 229910052950 sphalerite Inorganic materials 0.000 claims 2
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 2
- 239000010408 film Substances 0.000 description 218
- 238000001723 curing Methods 0.000 description 63
- 239000000463 material Substances 0.000 description 56
- 238000012545 processing Methods 0.000 description 38
- 238000012546 transfer Methods 0.000 description 35
- 238000004132 cross linking Methods 0.000 description 22
- YHQGMYUVUMAZJR-UHFFFAOYSA-N α-terpinene Chemical compound CC(C)C1=CC=C(C)CC1 YHQGMYUVUMAZJR-UHFFFAOYSA-N 0.000 description 20
- 238000001035 drying Methods 0.000 description 18
- 230000005540 biological transmission Effects 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 17
- 238000007669 thermal treatment Methods 0.000 description 15
- NBBQQQJUOYRZCA-UHFFFAOYSA-N diethoxymethylsilane Chemical compound CCOC([SiH3])OCC NBBQQQJUOYRZCA-UHFFFAOYSA-N 0.000 description 14
- 238000002955 isolation Methods 0.000 description 13
- 239000000356 contaminant Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 12
- WSTYNZDAOAEEKG-UHFFFAOYSA-N Mayol Natural products CC1=C(O)C(=O)C=C2C(CCC3(C4CC(C(CC4(CCC33C)C)=O)C)C)(C)C3=CC=C21 WSTYNZDAOAEEKG-UHFFFAOYSA-N 0.000 description 10
- XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 230000005670 electromagnetic radiation Effects 0.000 description 8
- 230000003028 elevating effect Effects 0.000 description 8
- 239000003999 initiator Substances 0.000 description 8
- 238000010926 purge Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000012634 fragment Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 230000009977 dual effect Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 238000001029 thermal curing Methods 0.000 description 5
- 238000013519 translation Methods 0.000 description 5
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 4
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- 238000002329 infrared spectrum Methods 0.000 description 3
- 239000003112 inhibitor Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 3
- 239000003361 porogen Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 230000000284 resting effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000002211 ultraviolet spectrum Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006664 bond formation reaction Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052805 deuterium Inorganic materials 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 235000001510 limonene Nutrition 0.000 description 2
- 229940087305 limonene Drugs 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000008521 reorganization Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 150000003505 terpenes Chemical class 0.000 description 2
- 235000007586 terpenes Nutrition 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Definitions
- the invention relates to a system for treating a dielectric film and, more particularly, to a system for treating a low dielectric constant (low-k) dielectric film with electromagnetic (EM) radiation.
- EM electromagnetic
- interconnect delay is a major limiting factor in the drive to improve the speed and performance of integrated circuits (IC).
- One way to minimize interconnect delay is to reduce interconnect capacitance by using low dielectric constant (low-k) materials as the insulating dielectric for metal wires in the IC devices.
- low-k materials have been developed to replace relatively high dielectric constant insulating materials, such as silicon dioxide.
- low-k films are being utilized for inter-level and intra-level dielectric layers between metal wires in semiconductor devices.
- material films are formed with pores, i.e., porous low-k dielectric films.
- Such low-k films can be deposited by a spin-on dielectric (SOD) method similar to the application of photo-resist, or by chemical vapor deposition (CVD).
- SOD spin-on dielectric
- CVD chemical vapor deposition
- Low-k materials are less robust than more traditional silicon dioxide, and the mechanical strength deteriorates further with the introduction of porosity.
- the porous low-k films can easily be damaged during plasma processing, thereby making desirable a mechanical strengthening process. It has been understood that enhancement of the material strength of porous low-k dielectrics is essential for their successful integration. Aimed at mechanical strengthening, alternative curing techniques are being explored to make porous low-k films more robust and suitable for integration.
- the curing of a polymer includes a process whereby a thin film deposited for example using spin-on or vapor deposition (such as chemical vapor deposition CVD) techniques, is treated in order to cause cross-linking within the film.
- free radical polymerization is understood to be the primary route for cross-linking.
- mechanical properties such as for example the Young's modulus, the film hardness, the fracture toughness and the interfacial adhesion, are improved, thereby improving the fabrication robustness of the low-k film.
- the objectives of post-deposition treatments may vary from film to film, including for example the removal of moisture, the removal of solvents, the burn-out of porogens used to form the pores in the porous dielectric film, the improvement of the mechanical properties for such films, and so on.
- Low dielectric constant (low k) materials are conventionally thermally cured at a temperature in the range of 300 0 C to 400 0 C for CVD films. For instance, furnace curing has been sufficient in producing strong, dense low-k films with a dielectric constant greater than approximately 2.5. However, when processing porous dielectric films (such as ultra low-k films) with a high level of porosity, the degree of cross-linking achievable with thermal treatment (or thermal curing) is no longer sufficient to produce films of adequate strength for a robust interconnect structure.
- the invention relates to a system for treating a dielectric film and, more particularly, to a system for curing a low dielectric constant (low-k) dielectric film.
- the invention further relates to a system for treating a low-k dielectric film with electromagnetic (EM) radiation.
- EM electromagnetic
- a system for curing a low dielectric constant (low-k) dielectric film on a substrate wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4.
- the system comprises an infrared (IR) radiation source and an ultraviolet (UV) radiation source for exposing the low-k dielectric film to IR radiation and UV radiation.
- IR infrared
- UV ultraviolet
- a process module for treating a dielectric film on a substrate comprises: a process chamber; a substrate holder coupled to the process chamber and configured to support a substrate; and a radiation source coupled to the process chamber and configured to expose the dielectric film to electromagnetic (EM) radiation, wherein the radiation source comprises a plurality of infrared (IR) sources, or a plurality of ultraviolet (UV) sources, or both a plurality of IR sources and a plurality of UV sources.
- IR infrared
- UV ultraviolet
- FIG. 1 illustrates a method of treating a dielectric film according to an embodiment
- FIG. 2 illustrates a side view schematic representation of a transfer system for a treatment system according to an embodiment
- FIG. 3 illustrates a top view schematic representation of the transfer system depicted in FIG. 2;
- FIG. 4 illustrates a side view schematic representation of a transfer system for a treatment system according to another embodiment
- FIG. 5 illustrates a top view schematic representation of a transfer system for a treatment system according to another embodiment
- FIG. 6 is a schematic cross-sectional view of a curing system according to another embodiment
- FIG. 7 is a schematic cross-sectional view of a curing system according to another embodiment
- FIG. 8A provides a schematic illustration of an optical system for exposing a substrate to electromagnetic radiation according to an embodiment
- FIG. 8B provides a schematic illustration of an optical system for exposing a substrate to electromagnetic radiation according to another embodiment
- FIG. 9 provides a schematic illustration of an optical system for exposing a substrate to electromagnetic radiation according to another embodiment
- FIGs. 10A and 10B provide illustrations of an optical window assembly for use in the optical system depicted in FIG. 9;
- FIG. 1 1 provides a schematic illustration of an optical system for exposing a substrate to electromagnetic radiation according to another embodiment
- FIG. 12 provides a schematic illustration of an optical system for exposing a substrate to electromagnetic radiation according to another embodiment
- FIG. 13 illustrates a scanning technique for the optical system depicted in FIG. 12;
- FIG. 14 provides a schematic illustration of an optical system for exposing a substrate to electromagnetic radiation according to another embodiment
- FIGs. 15A and 15B illustrate an optical pattern for exposing a substrate to EM radiation from two different regions in the electromagnetic spectrum according to an embodiment
- FIGs. 16A and 16B illustrate an optical pattern for exposing a substrate to EM radiation from two different spectral regions in the electromagnetic spectrum according to another embodiment
- FIG. 17 provides a schematic illustration of an optical system for exposing a substrate to electromagnetic radiation according to yet another embodiment.
- FIGs. 18A and 18B provide a cross-sectional view of a curing system for exposing a substrate to electromagnetic radiation from two different spectral regions in the electromagnetic spectrum according to another embodiment.
- alternative curing methods are more efficient in energy transfer, as compared to thermal curing processes, and the higher energy levels found in the form of energetic particles, such as accelerated electrons, ions, or neutrals, or in the form of energetic photons, can easily excite electrons in a low-k dielectric film, thus efficiently breaking chemical bonds and dissociating side groups.
- These alternative curing methods facilitate the generation of cross-linking initiators (free radicals) and can improve the energy transfer required in actual cross- linking. As a result, the degree of cross-linking can be increased at a reduced thermal budget.
- EB electron beam
- UV ultraviolet
- IR infrared
- MW microwave
- EB, UV, IR and MW curing all have their own benefits, these techniques also have limitations.
- High energy curing sources such as EB and UV can provide high energy levels to generate more than enough cross-linking initiators (free radicals) for cross-linking, which leads to much improved mechanical properties under complementary substrate heating.
- electrons and UV photons can cause indiscriminate dissociation of chemical bonds, which may adversely degrade the desired physical and electrical properties of the film, such as loss of hydrophobicity, increased residual film stress, collapse of pore structure, film densification and increased dielectric constant.
- a method of curing a low dielectric constant (low-k) dielectric film on a substrate comprises exposing the low-k dielectric film to non-ionizing, electromagnetic (EM) radiation, including UV radiation and IR radiation.
- EM electromagnetic
- the UV exposure may comprise a plurality of UV exposures, wherein each UV exposure may or may not include a different intensity, power, power density, or wavelength range, or any combination of two or more thereof.
- the IR exposure may comprise a plurality of IR exposures, wherein each IR exposure may or may not include a different intensity, power, power density, or wavelength range, or any combination of two or more thereof.
- the low-k dielectric film may be heated by elevating the temperature of the substrate to a UV thermal temperature ranging from approximately 100 degrees C to approximately 600 degrees C.
- the UV thermal temperature ranges from approximately 300 degrees C to approximately 500 degrees C.
- the UV thermal temperature ranges from approximately 350 degrees C to approximately 450 degrees C.
- Substrate thermal heating may be performed by conductive heating, convective heating, or radiative heating, or any combination of two or more thereof.
- the low-k dielectric film may be heated by elevating the temperature of the substrate to an IR thermal temperature ranging from approximately 100 degrees C to approximately 600 degrees C.
- the IR thermal temperature ranges from approximately 300 degrees C to approximately 500 degrees C.
- the IR thermal temperature ranges from approximately 350 degrees C to approximately 450 degrees C.
- Substrate thermal heating may be performed by conductive heating, convective heating, or radiative heating, or any combination of two or more thereof.
- thermal heating may take place before UV exposure, during UV exposure, or after UV exposure, or any combination of two or more thereof. Additionally yet, thermal heating may take place before IR exposure, during IR exposure, or after IR exposure, or any combination of two or more thereof. Thermal heating may be performed by conductive heating, convective heating, or radiative heating, or any combination of two or more thereof.
- IR exposure may take place before the UV exposure, during the UV exposure, or after the UV exposure, or any combination of two or more thereof. Further yet, UV exposure may take place before the IR exposure, during the IR exposure, or after the IR exposure, or any combination of two or more thereof.
- the low-k dielectric film may be heated by elevating the temperature of the substrate to a pre-thermal treatment temperature ranging from approximately 100 degrees C to approximately 600 degrees C.
- the pre-thermal treatment temperature ranges from approximately 300 degrees C to approximately 500 degrees C and, desirably, the pre-thermal treatment temperature ranges from approximately 350 degrees C to approximately 450 degrees C.
- the low-k dielectric film may be heated by elevating the temperature of the substrate to a post-thermal treatment temperature ranging from approximately 100 degrees C to approximately 600 degrees C.
- the post-thermal treatment temperature ranges from approximately 300 degrees C to approximately 500 degrees C and, desirably, the post-thermal treatment temperature ranges from approximately 350 degrees C to approximately 450 degrees C.
- the substrate to be treated may be a semiconductor, a metallic conductor, or any other substrate to which the dielectric film is to be formed upon.
- the dielectric film can have a dielectric constant value (before drying and/or curing, or after drying and/or curing, or both) less than the dielectric constant of SiO 2 , which is approximately 4 (e.g., the dielectric constant for thermal silicon dioxide can range from 3.8 to 3.9).
- the dielectric film may have a dielectric constant (before drying and/or curing, or after drying and/or curing, or both) of less than 3.0, a dielectric constant of less than 2.5, a dielectric constant of less than 2.2, or a dielectric constant of less than 1.7.
- the dielectric film may be described as a low dielectric constant (low-k) film or an ultra-low-k film.
- the dielectric film may include at least one of an organic, inorganic, and inorganic-organic hybrid material. Additionally, the dielectric film may be porous or non-porous.
- the dielectric film may, for instance, include a single phase or dual phase porous low-k film that includes a structure-forming material and a pore- generating material.
- the structure-forming material may include an atom, a molecule, or fragment of a molecule that is derived from a structure-forming precursor.
- the pore-generating material may include an atom, a molecule, or fragment of a molecule that is derived from a pore-generating precursor (e.g., porogen).
- the single phase or dual phase porous low-k film may have a higher dielectric constant prior to removal of the pore-generating material than following the removal of the pore-generating material.
- forming a single phase porous low-k film may include depositing a structure-forming molecule having a pore-generating molecular side group weakly bonded to the structure-forming molecule on a surface of a substrate.
- forming a dual phase porous low-k film may include co-polymerizing a structure-forming molecule and a pore- generating molecule on a surface of a substrate.
- the dielectric film may have moisture, water, solvent, and/or other contaminants which cause the dielectric constant to be higher prior to drying and/or curing than following drying and/or curing.
- the dielectric film can be formed using chemical vapor deposition (CVD) techniques, or spin-on dielectric (SOD) techniques such as those offered in the Clean Track ACT 8 SOD and ACT 12 SOD coating systems commercially available from Tokyo Electron Limited (TEL).
- the Clean Track ACT 8 (200 mm) and ACT 12 (300 mm) coating systems provide coat, bake, and cure tools for SOD materials.
- the track system can be configured for processing substrate sizes of 100 mm, 200 mm, 300 mm, and greater.
- Other systems and methods for forming a dielectric film on a substrate as known to those skilled in the art of both spin-on dielectric technology and CVD dielectric technology are suitable for the invention.
- the dielectric film may include an inorganic, silicate-based material, such as oxidized organosilane (or organo siloxane), deposited using CVD techniques.
- oxidized organosilane or organo siloxane
- CVD techniques include Black DiamondTM CVD organosilicate glass (OSG) films commercially available from Applied Materials, Inc., or CoralTM CVD films commercially available from Novellus Systems.
- OSG Black DiamondTM CVD organosilicate glass
- porous dielectric films can include single- phase materials, such as a silicon oxide-based matrix having terminal organic side groups that inhibit cross-linking during a curing process to create small voids (or pores).
- porous dielectric films can include dual-phase materials, such as a silicon oxide-based matrix having inclusions of organic material (e.g., a porogen) that is decomposed and evaporated during a curing process.
- the dielectric film may include an inorganic, silicate-based material, such as hydrogen silsesquioxane (HSQ) or methyl silsesquioxane (MSQ), deposited using SOD techniques.
- HSQ hydrogen silsesquioxane
- MSQ methyl silsesquioxane
- examples of such films include FOx HSQ commercially available from Dow Corning, XLK porous HSQ commercially available from Dow Corning, and JSR LKD-5109 commercially available from JSR Microelectronics.
- the dielectric film can include an organic material deposited using SOD techniques.
- examples of such films include SiLK-I, SiLK-J, SiLK-H, SiLK-D, porous SiLK-T, porous SiLK-Y, and porous SiLK-Z semiconductor dielectric resins commercially available from Dow Chemical, and FLARETM, and Nanoglass® commercially available from Honeywell.
- the method includes a flow chart 10 beginning in 20 with optionally drying the dielectric film on the substrate in a first processing system.
- the first processing system may include a drying system configured to remove, or partially remove, one or more contaminants in the dielectric film, including, for example, moisture, water, solvent, pore-generating material, residual pore- generating material, pore-generating molecules, fragments of pore-generating molecules, or any other contaminant that may interfere with a subsequent curing process.
- a drying system configured to remove, or partially remove, one or more contaminants in the dielectric film, including, for example, moisture, water, solvent, pore-generating material, residual pore- generating material, pore-generating molecules, fragments of pore-generating molecules, or any other contaminant that may interfere with a subsequent curing process.
- the dielectric film is exposed to UV radiation.
- the UV exposure may be performed in a second processing system.
- the second processing system may include a curing system configured to perform a UV-assisted cure of the dielectric film by causing or partially causing cross-linking within the dielectric film in order to, for example, improve the mechanical properties of the dielectric film.
- the substrate can be transferred from the first processing system to the second processing system under vacuum in order to minimize contamination.
- the exposure of the dielectric film to UV radiation may include exposing the dielectric film to UV radiation from one or more UV lamps, one or more UV LEDs (light-emitting diodes), or one or more UV lasers, or a combination of two or more thereof.
- the UV radiation may range in wavelength from approximately 100 nanometers (nm) to approximately 600 nm. Alternatively, the UV radiation may range in wavelength from approximately 150 nm to approximately 400 nm. Alternatively, the UV radiation may range in wavelength from approximately 150 nm to approximately 300 nm. Alternatively, the UV radiation may range in wavelength from approximately 170 nm to approximately 240 nm. Alternatively, the UV radiation may range in wavelength from approximately 200 nm to approximately 240 nm.
- the dielectric film may be heated by elevating the temperature of the substrate to a UV thermal temperature ranging from approximately 100 degrees C to approximately 600 degrees C.
- the UV thermal temperature can range from approximately 300 degrees C to approximately 500 degrees C.
- the UV thermal temperature can range from approximately 350 degrees C to approximately 450 degrees C.
- the dielectric film may be heated by elevating the temperature of the substrate. Heating of the substrate may include conductive heating, convective heating, or radiative heating, or any combination of two or more thereof.
- the dielectric film may be exposed to IR radiation.
- the exposure of the dielectric film to IR radiation may include exposing the dielectric film to IR radiation from one or more IR lamps, one or more IR LEDs (light emitting diodes), or one or more IR lasers, or a combination of two or more thereof.
- the IR radiation may range in wavelength from approximately 1 micron to approximately 25 microns. Alternatively, the IR radiation may range in wavelength from approximately 2 microns to approximately 20 microns. Alternatively, the IR radiation may range in wavelength from approximately 8 microns to approximately 14 microns. Alternatively, the IR radiation may range in wavelength from approximately 8 microns to approximately 12 microns. Alternatively, the IR radiation may range in wavelength from approximately 9 microns to approximately 10 microns.
- the dielectric film is exposed to IR radiation.
- the exposure of the dielectric film to IR radiation may include exposing the dielectric film to IR radiation from one or more IR lamps, one or more IR LEDs (light emitting diodes), or one or more IR lasers, or both.
- the IR radiation may range in wavelength from approximately 1 micron to approximately 25 microns. Alternatively, the IR radiation may range in wavelength from approximately 2 microns to approximately 20 microns. Alternatively, the IR radiation may range in wavelength from approximately 8 microns to approximately 14 microns. Alternatively, the IR radiation may range in wavelength from approximately 8 microns to approximately 12 microns. Alternatively, the IR radiation may range in wavelength from approximately 9 microns to approximately 10 microns.
- the IR exposure may take place before the UV exposure, during the UV exposure, or after the UV exposure, or any combination of two or more thereof.
- the dielectric film may be heated by elevating the temperature of the substrate to an IR thermal treatment temperature ranging from approximately 100 degrees C to approximately 600 degrees C.
- the IR thermal treatment temperature can range from approximately 300 degrees C to approximately 500 degrees C.
- the IR thermal treatment temperature can range from approximately 350 degrees C to approximately 450 degrees C.
- the dielectric film may be heated by elevating the temperature of the substrate. Heating of the substrate may include conductive heating, convective heating, or radiative heating, or any combination of two or more thereof.
- the dielectric film may be heated through absorption of IR energy.
- the heating may further include conductively heating the substrate by placing the substrate on a substrate holder, and heating the substrate holder using a heating device.
- the heating device may include a resistive heating element.
- the inventors have recognized that the energy level (hv) delivered can be varied during different stages of the curing process.
- the curing process can include mechanisms for the removal of moisture and/or contaminants, the removal of pore-generating material, the decomposition of pore-generating material, the generation of cross-linking initiators, the cross-linking of the dielectric film, and the diffusion of the cross-linking initiators. Each mechanism may require a different energy level and rate at which energy is delivered to the dielectric film.
- the removal process may be facilitated by photon absorption at IR wavelengths.
- IR exposure assists the removal of pore- generating material more efficiently than thermal heating or UV exposure.
- the removal process may be assisted by decomposition of the pore- generating material.
- the removal process may include IR exposure that is complemented by UV exposure.
- UV exposure may assist a removal process having IR exposure by dissociating bonds between pore-generating material (e.g., pore-generating molecules and/or pore-generating molecular fragments) and the structure-forming material.
- the removal and/or decomposition processes may be assisted by photon absorption at UV wavelengths (e.g., about 300 nm to about 450 nm).
- the initiator generation process may be facilitated by using photon and phonon induced bond dissociation within the structure-forming material.
- the inventors have discovered that the initiator generation process may be facilitated by UV exposure.
- bond dissociation can require energy levels having a wavelength less than or equal to approximately 300 to 400 nm.
- the cross-linking process can be facilitated by thermal energy sufficient for bond formation and reorganization.
- the inventors have discovered that cross-linking may be facilitated by IR exposure or thermal heating or both.
- bond formation and reorganization may require energy levels having a wavelength of approximately 9 microns which, for example, corresponds to the main absorbance peak in siloxane-based organosilicate low-k materials.
- the drying process for the dielectric film, the IR exposure of the dielectric film, and the UV exposure of the dielectric film may be performed in the same processing system, or each may be performed in separate processing systems.
- the drying process may be performed in the first processing system and the IR exposure and the UV exposure may be performed in the second processing system.
- the IR exposure of the dielectric film may be performed in a different processing system than the UV exposure.
- the IR exposure of the dielectric film may be performed in a third processing system, wherein the substrate can be transferred from the second processing system to the third processing system under vacuum in order to minimize contamination.
- the dielectric film may optionally be post-treated in a post-treatment system configured to modify the cured dielectric film.
- post-treatment may include thermal heating the dielectric film.
- post-treatment may include spin coating or vapor depositing another film on the dielectric film in order to promote adhesion for subsequent films or improve hydrophobicity.
- adhesion promotion may be achieved in a post- treatment system by lightly bombarding the dielectric film with ions.
- the post-treatment may comprise performing one or more of depositing another film on the dielectric film, cleaning the dielectric film, or exposing the dielectric film to plasma.
- FIGs. 2 and 3 provide a side view and top view, respectively, of a process platform 100 for treating a dielectric film on a substrate.
- the process platform 100 includes a first process module 1 10 and a second process module 120.
- the first process module 1 10 may comprise a curing system and the second process module 120 may comprise a drying system.
- the drying system may be configured to remove, or reduce to sufficient levels, one or more contaminants, pore-generating materials, and/or cross- linking inhibitors in the dielectric film, including, for example, moisture, water, solvent, contaminants, pore-generating material, residual pore-generating material, a weakly bonded side group to the structure-forming material, pore- generating molecules, fragments of pore-generating molecules, cross-linking inhibitors, fragments of cross-linking inhibitors, or any other contaminant that may interfere with a curing process performed in the curing system.
- a sufficient reduction of a specific contaminant present within the dielectric film from prior to the drying process to following the drying process, can include a reduction of approximately 10% to approximately 100% of the specific contaminant.
- the level of contaminant reduction may be measured using Fourier transform infrared (FTIR) spectroscopy, or mass spectroscopy.
- FTIR Fourier transform infrared
- mass spectroscopy or mass spectroscopy.
- a sufficient reduction of a specific contaminant present within the dielectric film can range from approximately 50% to approximately 100%.
- a sufficient reduction of a specific contaminant present within the dielectric film can range from approximately 80% to approximately 100%.
- the curing system may be configured to cure the dielectric film by causing or partially causing cross-linking within the dielectric film in order to, for example, improve the mechanical properties of the dielectric film. Furthermore, the curing system may be configured to cure the dielectric film by causing or partially causing cross-link initiation, removal of pore-generating material, decomposition of pore-generating material, etc.
- the curing system can include one or more radiation sources configured to expose the substrate having the dielectric film to EM radiation at multiple EM wavelengths.
- the one or more radiation sources can include an IR radiation source and a UV radiation source. The exposure of the substrate to UV radiation and IR radiation may be performed simultaneously, sequentially, or partially over-lapping one another.
- the exposure of the substrate to UV radiation can, for instance, precede the exposure of the substrate to IR radiation or follow the exposure of the substrate to IR radiation or both. Additionally, during sequential exposure, the exposure of the substrate to IR radiation can, for instance, precede the exposure of the substrate to UV radiation or follow the exposure of the substrate to UV radiation or both.
- the IR radiation can include an IR radiation source ranging from approximately 1 micron to approximately 25 microns. Additionally, for example, the IR radiation may range from about 2 microns to about 20 microns, or from about 8 microns to about 14 microns, or from about 8 microns to about 12 microns, or from about 9 microns to about 10 microns. Additionally, for example, the UV radiation can include a UV wave-band source producing radiation ranging from approximately 100 nanometers (nm) to approximately 600 nm.
- the UV radiation may range from about 150 nm to about 400 nm, or from about 150 nm to about 300 nm, or from about 170 to about 240 nm, or from about 200 nm to about 240 nm.
- the first process module 1 10 may comprise a first curing system configured to expose the substrate to UV radiation
- the second process module 120 may comprise a second curing system configured to expose the substrate to IR radiation.
- IR exposure of the substrate can be performed in the first process module 1 10, or the second process module 120, or a separate process module (not shown).
- a transfer system 130 can be coupled to the second process module 120 in order to transfer substrates into and out of the first process module 1 10 and the second process module 120, and exchange substrates with a multi-element manufacturing system 140. Transfer system 130 may transfer substrates to and from the first process module 1 10 and the second process module 120 while maintaining a vacuum environment.
- the first and second process modules 1 10, 120, and the transfer system 130 can, for example, include a processing element within the multielement manufacturing system 140.
- the transfer system 130 may comprise a dedicated substrate handler 160 for moving a one or more substrates between the first process module 1 10, the second process module 120, and the multi-element manufacturing system 140.
- the dedicated substrate handler 160 is dedicated to transferring the one or more substrates between the process modules (first process module 1 10 and second process module 120), and the multi-element manufacturing system 140; however, the embodiment is not so limited.
- the multi-element manufacturing system 140 may permit the transfer of substrates to and from processing elements including such devices as etch systems, deposition systems, coating systems, patterning systems, metrology systems, etc.
- the deposition system may include one or more vapor deposition systems, each of which is configured to deposit a dielectric film on a substrate, wherein the dielectric film comprises a porous dielectric film, a non-porous dielectric film, a low dielectric constant (low-k) film, or an ultra low-k film.
- an isolation assembly 150 can be utilized to couple each system.
- the isolation assembly 150 can include at least one of a thermal insulation assembly to provide thermal isolation, and a gate valve assembly to provide vacuum isolation.
- the first and second process modules 1 10 and 120, and transfer system 130 can be placed in any sequence.
- FIG. 3 presents a top-view of the process platform 100 illustrated in FIG. 2 for processing one or more substrates.
- a substrate 142 is processed in the first and second process modules 1 10, 120. Although only one substrate is shown in each treatment system in FIG. 3, two or more substrates may be processed in parallel in each process module.
- the process platform 100 may comprise a first process element 102 and a second process element 104 configured to extend from the multi-element manufacturing system 140 and work in parallel with one another. As illustrated in FIGs.
- the first process element 102 may comprise first process module 1 10 and second process module 120, wherein a transfer system 130 utilizes the dedicated substrate handler 160 to move substrate 142 into and out of the first process element 102.
- FIG. 4 presents a side-view of a process platform 200 for processing one or more substrates according to another embodiment.
- Process platform 200 may be configured for treating a dielectric film on a substrate.
- the process platform 200 comprises a first process module 210, and a second process module 220, wherein the first process module 210 is stacked atop the second process module 220 in a vertical direction as shown.
- the first process module 210 may comprise a curing system
- the second process module 220 may comprise a drying system.
- the first process module 210 may comprise a first curing system configured to expose the substrate to UV radiation
- the second process module 220 may comprise a second curing system configured to expose the substrate to IR radiation.
- a transfer system 230 may be coupled to the first process module 210, in order to transfer substrates into and out of the first process module 210, and coupled to the second process module 220, in order to transfer substrates into and out of the second process module 220.
- the transfer system 230 may comprise a dedicated handler 260 for moving one or more substrates between the first process module 210, the second process module 220 and the multi-element manufacturing system 240.
- the handler 260 may be dedicated to transferring the substrates between the process modules (first process module 210 and second process module 220) and the multi-element manufacturing system 240; however, the embodiment is not so limited.
- transfer system 230 may exchange substrates with one or more substrate cassettes (not shown). Although only two process modules are illustrated in FIG. 4, other process modules can access transfer system 230 or multi-element manufacturing system 240 including such devices as etch systems, deposition systems, coating systems, patterning systems, metrology systems, etc.
- the deposition system may include one or more vapor deposition systems, each of which is configured to deposit a dielectric film on a substrate, wherein the dielectric film comprises a porous dielectric film, a non-porous dielectric film, a low dielectric constant (low-k) film, or an ultra low-k film.
- An isolation assembly 250 can be used to couple each process module in order to isolate the processes occurring in the first and second process modules.
- the isolation assembly 250 may comprise at least one of a thermal insulation assembly to provide thermal isolation, and a gate valve assembly to provide vacuum isolation.
- the transfer system 230 can serve as part of the isolation assembly 250.
- FIG. 5 presents a top view of a process platform 300 for processing a plurality of substrates.
- Process platform 300 may be configured for treating a dielectric film on a substrate.
- the process platform 300 comprises a first process module 310, a second process module 320, and an optional auxiliary process module 370 coupled to a first transfer system 330 and an optional second transfer system 330'.
- the first process module 310 may comprise a curing system
- the second process module 320 may comprise a drying system.
- the first process module 310 may comprise a first curing system configured to expose the substrate to UV radiation
- the second process module 320 may comprise a second curing system configured to expose the substrate to IR radiation.
- the first transfer system 330 and the optional second transfer system 330' are coupled to the first process module 310 and the second process module 320, and configured to transfer one or more substrates in and out of the first process module 310 and the second process module 320, and also to exchange one or more substrates with a multi-element manufacturing system 340.
- the multi-element manufacturing system 340 may comprise a load-lock element to allow cassettes of substrates to cycle between ambient conditions and low pressure conditions.
- the first and second treatment systems 310, 320, and the first and optional second transfer systems 330, 330' can, for example, comprise a processing element within the multi-element manufacturing system 340.
- the transfer system 330 may comprise a first dedicated handler 360 and the optional second transfer system 330' comprises an optional second dedicated handler 360' for moving one or more substrates between the first process module 310, the second process module 320, the optional auxiliary process module 370 and the multi-element manufacturing system 340.
- the multi-element manufacturing system 340 may permit the transfer of substrates to and from processing elements including such devices as etch systems, deposition systems, coating systems, patterning systems, metrology systems, etc.
- the multi-element manufacturing system 340 may permit the transfer of substrates to and from the auxiliary process module 370, wherein the auxiliary process module 370 may include an etch system, a deposition system, a coating system, a patterning system, a metrology system, etc.
- the deposition system may include one or more vapor deposition systems, each of which is configured to deposit a dielectric film on a substrate, wherein the dielectric film comprises a porous dielectric film, a non-porous dielectric film, a low dielectric constant (low-k) film, or an ultra low-k film.
- an isolation assembly 350 is utilized to couple each process module.
- the isolation assembly 350 may comprise at least one of a thermal insulation assembly to provide thermal isolation and a gate valve assembly to provide vacuum isolation.
- process modules 310 and 320, and transfer systems 330 and 330' may be placed in any sequence.
- FIG. 6 a process module 400 configured to treat a dielectric film on a substrate is shown according to another embodiment.
- the process module 400 may be configured to cure a dielectric film.
- Process module 400 includes a process chamber 410 configured to produce a clean, contaminant-free environment for curing a substrate 425 resting on substrate holder 420.
- Process module 400 further includes a radiation source 440 configured to expose substrate 425 having the dielectric film to EM radiation.
- the EM radiation is dedicated to a specific radiation wave-band, and includes single, multiple, narrow-band, or broadband EM wavelengths within that specific radiation wave-band.
- the radiation source 440 can include an IR radiation source configured to produce EM radiation in the IR spectrum.
- the radiation source 440 can include a UV radiation source configured to produce EM radiation in the UV spectrum.
- IR treatment and UV treatment of substrate 425 can be performed in a separate process modules.
- the IR radiation source may include a broad-band IR source (e.g., polychromatic), or may include a narrow-band IR source (e.g., monochromatic).
- the IR radiation source may include one or more IR lamps, one or more IR LEDs, or one or more IR lasers (continuous wave (CW), tunable, or pulsed), or any combination thereof.
- the IR power density may range up to about 20 W/cm 2 .
- the IR power density may range from about 1 W/cm 2 to about 20 W/cm 2 .
- the IR radiation wavelength may range from approximately 1 micron to approximately 25 microns. Alternatively, the IR radiation wavelength may range from approximately 8 microns to approximately 14 microns.
- the IR radiation wavelength may range from approximately 8 microns to approximately 12 microns. Alternatively, the IR radiation wavelength may range from approximately 9 microns to approximately 10 microns.
- the IR radiation source may include a CO 2 laser system. Additional, for example, the IR radiation source may include an IR element, such as a ceramic element or silicon carbide element, having a spectral output ranging from approximately 1 micron to approximately 25 microns, or the IR radiation source can include a semiconductor laser (diode), or ion, Tksapphire, or dye laser with optical parametric amplification.
- the UV radiation source may include a broad-band UV source (e.g., polychromatic), or may include a narrow-band UV source (e.g., monochromatic).
- the UV radiation source may include one or more UV lamps, one or more UV LEDs, or one or more UV lasers (continuous wave (CW), tunable, or pulsed), or any combination thereof.
- UV radiation may be generated, for instance, from a microwave source, an arc discharge, a dielectric barrier discharge, or electron impact generation.
- the UV power density may range from approximately 0.1 mW/cm 2 to approximately 2000 mW/cm 2 .
- the UV wavelength may range from approximately 100 nanometers (nm) to approximately 600 nm.
- the UV radiation may range from approximately 150 nm to approximately 400 nm. Alternatively, the UV radiation may range from approximately 150 nm to approximately 300 nm. Alternatively, the UV radiation may range from approximately 170 nm to approximately 240 nm. Alternatively, the UV radiation may range from approximately 200 nm to approximately 240 nm.
- the UV radiation source may include a direct current (DC) or pulsed lamp, such as a Deuterium (D 2 ) lamp, having a spectral output ranging from approximately 180 nm to approximately 500 nm, or the UV radiation source may include a semiconductor laser (diode), (nitrogen) gas laser, frequency-tripled (or quadrupled) Nd:YAG laser, or copper vapor laser.
- DC direct current
- D 2 Deuterium
- the UV radiation source may include a semiconductor laser (diode), (nitrogen) gas laser, frequency-tripled (or quadrupled) Nd:YAG laser, or copper vapor laser.
- the IR radiation source, or the UV radiation source, or both may include any number of optical device to adjust one or more properties of the output radiation.
- each source may further include optical filters, optical lenses, beam expanders, beam collimators, etc.
- optical manipulation devices as known to those skilled in the art of optics and EM wave propagation are suitable for the invention.
- the substrate holder 420 can further include a temperature control system that can be configured to elevate and/or control the temperature of substrate 425.
- the temperature control system can be a part of a thermal treatment device 430.
- the substrate holder 420 can include one or more conductive heating elements embedded in substrate holder 420 coupled to a power source and a temperature controller.
- each heating element can include a resistive heating element coupled to a power source configured to supply electrical power.
- the substrate holder 420 could optionally include one or more radiative heating elements.
- the temperature of substrate 425 can, for example, range from approximately 20 degrees C to approximately 600 degrees C, and desirably, the temperature may range from approximately 100 degrees C to approximately 600 degrees C.
- the temperature of substrate 425 can range from approximately 300 degrees C to approximately 500 degrees C, or from approximately 350 degrees C to approximately 450 degrees C.
- the substrate holder 420 can further include a drive system 435 configured to translate, or rotate, or both translate and rotate the substrate holder 420 to move the substrate 425 relative to radiation source 440.
- the substrate holder 420 may or may not be configured to clamp substrate 425.
- substrate holder 420 may be configured to mechanically or electrically clamp substrate 425.
- substrate holder 420 may be configured to support a plurality of substrates.
- process module 400 can further include a gas injection system 450 coupled to the process chamber 410 and configured to introduce a purge gas to process chamber 410.
- the purge gas can, for example, include an inert gas, such as a noble gas or nitrogen.
- the purge gas can include other gases, such as for example O 2 , H 2 , NH 3 , C x Hy, or any combination thereof.
- process module 400 can further include a vacuum pumping system 455 coupled to process chamber 410 and configured to evacuate the process chamber 410.
- substrate 425 can be subject to a purge gas environment with or without vacuum conditions.
- process module 400 can include a controller 460 coupled to process chamber 410, substrate holder 420, thermal treatment device 430, drive system 435, radiation source 440, gas injection system 450, and vacuum pumping system 455.
- Controller 460 includes a microprocessor, a memory, and a digital I/O port capable of generating control voltages sufficient to communicate and activate inputs to the process module 400 as well as monitor outputs from the process module 400.
- a program stored in the memory is utilized to interact with the process module 400 according to a stored process recipe.
- the controller 460 can be used to configure any number of processing elements (410, 420, 430, 435, 440, 450, or 455), and the controller 460 can collect, provide, process, store, and display data from processing elements.
- the controller 460 can include a number of applications for controlling one or more of the processing elements.
- controller 460 can include a graphic user interface (GUI) component (not shown) that can provide easy to use interfaces that enable a user to monitor and/or control one or more processing elements.
- GUI graphic user interface
- FIG. 7 a process module 500 configured to treat a dielectric film on a substrate is shown according to another embodiment.
- the process module 500 may be configured to cure a dielectric film.
- Process module 500 includes many of the same elements as those depicted in FIG. 6.
- the process module 500 comprises process chamber 410 configured to produce a clean, contaminant-free environment for curing a substrate 425 resting on substrate holder 420.
- Process module 500 includes a first radiation source 540 configured to expose substrate 425 having the dielectric film to a first radiation source grouping of EM radiation.
- Process module 500 further includes a second radiation source 545 configured to expose substrate 425 having the dielectric film to a second radiation source grouping of EM radiation.
- Each grouping of EM radiation is dedicated to a specific radiation wave-band, and includes single, multiple, narrow-band, or broadband EM wavelengths within that specific radiation wave-band.
- the first radiation source 540 can include an IR radiation source configured to produce EM radiation in the IR spectrum.
- the second radiation source 545 can include a UV radiation source configured to produce EM radiation in the UV spectrum.
- IR treatment and UV treatment of substrate 425 can be performed in a single process module.
- process module 500 can include a controller 560 coupled to process chamber 410, substrate holder 420, thermal treatment device 430, drive system 435, first radiation source 540, second radiation source 545, gas injection system 450, and vacuum pumping system 455.
- Controller 560 includes a microprocessor, a memory, and a digital I/O port capable of generating control voltages sufficient to communicate and activate inputs to the process module 500 as well as monitor outputs from the process module 500.
- a program stored in the memory is utilized to interact with the process module 500 according to a stored process recipe.
- the controller 560 can be used to configure any number of processing elements (410, 420, 430, 435, 540, 545, 450, or 455), and the controller 560 can collect, provide, process, store, and display data from processing elements.
- the controller 460 can include a number of applications for controlling one or more of the processing elements.
- controller 560 can include a graphic user interface (GUI) component (not shown) that can provide easy to use interfaces that enable a user to monitor and/or control one or more processing elements.
- GUI graphic user interface
- the optical system 600 comprises a radiation source 630 and an optics assembly 635, which are coupled to a process module and configured to illuminate a substrate 625 disposed in the process module with EM radiation.
- the radiation source 630 is configured to produce a beam of EM radiation 670
- the optics assembly 635 is configured to manipulate the beam of EM radiation 670 in such a manner to partly or fully illuminate at least one region on substrate 625.
- the radiation source 630 may comprise an IR radiation source, or a UV radiation source.
- the radiation source 630 may comprise a plurality of radiation sources.
- the radiation source 630 may comprise one or more IR lasers, or one or more UV lasers.
- the optics assembly 635 may comprise a beam sizing device 640 configured to size the beam of EM radiation 670.
- the optics assembly 635 may comprise a beam shaping device 650 configured to shape the beam of EM radiation 670.
- the beam sizing device 640, or the beam shaping device 650, or both may include any number of optical devices to adjust one or more properties of the beam of EM radiation 670.
- each device may include optical filters, optical lenses, optical mirrors, beam expanders, beam collimators, etc. Such optical manipulation devices as known to those skilled in the art of optics and EM wave propagation are suitable for the invention.
- optical system 600 is configured to size, or shape, or both size and shape the beam of EM radiation 670 for flood illumination of the entire upper surface of substrate 625.
- the beam of EM radiation 670 enters the process module through an optical window 660, and transmits through process space 610 to substrate 625. Although full illumination of substrate 625 is shown, the beam of EM radiation 670 may illuminate only a fraction of the upper surface of substrate 625.
- the optical window 660 may be fabricated from sapphire, CaF 2 , BaF 2 , ZnSe, ZnS, Ge, or GaAs for IR transmission.
- the optical window 660 may be fabricated from SiO ⁇ -containing materials, such as quartz, fused silica, glass, sapphire, CaF 2 , MgF 2 , etc. for UV transmission. Furthermore, for example, the optical window 660 may be fabricated from KCI for IR transmission and UV transmission. The optical window 660 may also be coated with an anti-reflective coating. [00110]
- Substrate 625 rests on substrate holder 620 in the process module.
- the substrate holder 620 can further include a temperature control system that can be configured to elevate and/or control the temperature of substrate 625.
- the substrate holder 620 can include a drive system configured to vertically and/or laterally translate (lateral (x-y) translation indicated by label 622), or rotate (rotation indicated by label 621 ), or both translate and rotate the substrate holder 620 to move the substrate 625 relative to the beam of EM radiation 670. Additionally, the substrate holder 620 can include a motion control system coupled to the drive system, and configured to perform at least one of monitoring a position of substrate 625, adjusting the position of substrate 625, or controlling the position of substrate 625. [00111] Furthermore, the substrate holder 620 may or may not be configured to clamp substrate 625. For instance, substrate holder 620 may be configured to mechanically or electrically clamp substrate 625. [00112] Referring now to FIG.
- FIG. 8B a schematic illustration of an optical system 600' for exposing a substrate to EM radiation is presented according to another embodiment.
- the optical system 600' comprises radiation source 630 and optics assembly 635, which are coupled to a process module and configured to illuminate substrate 625 disposed in the process module with EM radiation as depicted in FIG. 8A.
- the optical system 600' further comprises a second radiation source 630' and a second optics assembly 635', which are coupled to the process module and configured to illuminate substrate 625 with second EM radiation.
- the first radiation source 630 is configured to produce a first beam of EM radiation 670A and the first optics assembly 635 is configured to manipulate the first beam of EM radiation 670A in such a manner to illuminate a first region 680A on substrate 625
- the second radiation source 630' is configured to produce a second beam of EM radiation 670B and the second optics assembly 635' is configured to manipulate the second beam of EM radiation 670B in such a manner to illuminate a second region 680B on substrate 625.
- the radiation source 630 may comprise an IR radiation source, or a UV radiation source. Furthermore, the radiation source 630 may comprise a plurality of radiation sources. For example, the radiation source 630 may comprise one or more IR lasers, or one or more UV lasers.
- the second radiation source 630' may comprise an IR radiation source, or a UV radiation source. Furthermore, the second radiation source 630' may comprise a plurality of radiation sources. For example, the second radiation source 630' may comprise one or more IR lasers, or one or more UV lasers.
- the second optics assembly 635' may comprise a beam sizing device 640' configured to size the second beam of EM radiation 670B.
- the second optics 635' may comprise a beam shaping device 650' configured to shape the second beam of EM radiation 670B.
- optical system 600' is configured to size, or shape, or both size and shape the first beam of EM radiation 670A and the second beam of EM radiation 670B for illumination of the upper surface of substrate 625.
- the first beam of EM radiation 670A enters the process module through optical window 660, and transmits through process space 610 to the first region 680A of substrate 625.
- the second beam of EM radiation 670B enters the process module through optical window 660, and transmits through process space 610 to the second region 680B of substrate 625.
- first and second beams of EM radiation 670A, 670B Full illumination of substrate 625 by the first and second beams of EM radiation 670A, 670B is shown; however, the first and second beams of EM radiation 670A, 670B may illuminate only a fraction of the upper surface of substrate 625. Furthermore, the first region 680A and second region 680B are shown as distinct regions without overlap; however, the first region 680A and the second region 680B may overlap.
- optical window 660 Although only one optical window 660 is shown, a plurality of optical windows may be used through which the first and second beams of EM radiation 670A, 670B may be transmitted. Furthermore, the optical system 600' may be configured to illuminate substrate 625 with more than two beams of EM radiation.
- the optical system 700 comprises a radiation source 730 and optics assembly 735, which are coupled to a process module and configured to illuminate substrate 725 disposed in the process module with EM radiation. As shown in FIG. 9, the optical system 700 is configured to produce a plurality of beams of EM radiation 770, 771 , 772, 773, and manipulate each beam of EM radiation 770, 771 , 772, 773 in such a manner to illuminate different regions on substrate 725.
- the radiation source 730 can produce one or more beams of EM radiation.
- the radiation source 730 may comprise an IR radiation source, or a UV radiation source. Additionally, for example, the radiation source 730 may comprise one or more IR lasers, or one or more UV lasers.
- the optical system 700 can comprise one or more beam splitting devices 732 configured to split at least one of the one or more sources of EM radiation output from radiation source 730 to generate the plurality of beams of EM radiation 770, 771 , 772, 773. Additionally, the optical system 700 can comprise one or more beam combining devices 734 configured to combine the plurality of beams of EM radiation 770, 771 , 772, 773 onto at least a portion of substrate 725.
- the one or more beam splitting devices 732 and the one or more beam combining devices 734 may include optical lenses, optical mirrors, beam apertures, etc.
- Such optical manipulation devices as known to those skilled in the art of optics and EM wave propagation are suitable for the invention.
- the optical system 700 comprises a plurality of beam sizing devices 740, 741 , 742, 743, wherein each of the plurality of beam sizing devices 740, 741 , 742, 743 is configured to size one of the plurality of beams of EM radiation.
- the optical system 700 comprises a plurality of beam shaping devices 750, 751 , 752, 753, wherein each of the plurality of beam shaping devices 750, 751 , 752, 753 is configured to shape one of the plurality of beams of EM radiation.
- the beam sizing devices 740, 741 , 742, 743, or the beam shaping devices 750, 751 , 752, 753, or both may include any number of optical devices to adjust one or more properties of the output radiation.
- each device may include optical filters, optical lenses, optical mirrors, beam expanders, beam collimators, etc.
- Such optical manipulation devices as known to those skilled in the art of optics and EM wave propagation are suitable for the invention.
- the one or more beam combining devices 734 is configured to illuminate substrate 725 at a plurality of locations 781 , 782, 783, 784 with the plurality of beams of EM radiation 770, 771 , 772, 773, wherein the plurality of locations 781 , 782, 783, 784 substantially abut one another and illuminate approximately the entire upper surface of substrate 725.
- the size and/or shape of the plurality of beams of EM radiation 770, 771 , 772, 773 may be adjusted using the plurality of beam sizing devices 740, 741 , 742, 743, and the plurality of beam shaping devices 750, 751 , 752, 753.
- the one or more beam combining devices 734 is configured to illuminate substrate 725 at substantially the same location with the plurality of beams of EM radiation 770, 771 , 772, 773.
- the one or more beam combining devices 734 is configured to illuminate substrate 725 at a plurality of locations with the plurality of beams of EM radiation 770, 771 , 772, 773, wherein at least two of the plurality of locations overlap one another.
- optical system 700 is configured to size, or shape, or both size and shape each beam of EM radiation 770, 771 , 772, 773 for illumination of the upper surface of substrate 725.
- Each beam of EM radiation 770, 771 , 772, 773 enters the process module through optical windows 761 , 762, 763, 764, respectively, in optical window assembly 760, and transmits through process space 710 to substrate regions 781 , 782, 783, 784 of substrate 725.
- Full illumination of substrate 725 by the plurality of beams of EM radiation 770, 771 , 772, 773 is shown; however, the plurality of beams of EM radiation 770, 771 , 772, 773 may illuminate only a fraction of the upper surface of substrate 725.
- the substrate regions 781 , 782, 783, 784 are shown as distinct regions without overlap; however, the substrate regions 781 , 782, 783, 784 may overlap.
- each beam of EM radiation 770, 771 , 772, 773 is shown to transmit through a separate optical window 761 , 762, 763, 764, respectively, a single optical window may be used through which the plurality of beams of EM radiation 770, 771 , 772, 773 may pass. Alternatively, one or more optical windows may be used to transmit the plurality of beams of EM radiation 770, 771 , 772, 773.
- Substrate 725 rests on substrate holder 720 in the process module.
- the substrate holder 720 can further include a temperature control system that can be configured to elevate and/or control the temperature of substrate 725.
- the substrate holder 720 can include a drive system configured to vertically and/or laterally translate (lateral (x-y) translation indicated by label 722), or rotate (rotation indicated by label 721 ), or both translate and rotate the substrate holder 720 to move the substrate 725 relative to the plurality of beams of EM radiation 770, 771 , 772, 773.
- the substrate holder 720 can include a motion control system coupled to the drive system, and configured to perform at least one of monitoring a position of substrate 725, adjusting the position of substrate 725, or controlling the position of substrate 725.
- the substrate holder 720 may or may not be configured to clamp substrate 725.
- substrate holder 720 may be configured to mechanically or electrically clamp substrate 725.
- FIG. 1 1 a schematic illustration of an optical system 800 for exposing a substrate to EM radiation is presented according to another embodiment.
- the optical system 800 comprises a radiation source 830 and optics assembly 835, which are coupled to a process module and configured to illuminate substrate 825 disposed in the process module with EM radiation.
- the optical system 800 is configured to produce a sheet of EM radiation 870, and manipulate the sheet of EM radiation 870 in such a manner to illuminate a region 880 on substrate 825.
- a sheet of radiation may include a slit of EM radiation, or a bar beam of EM radiation.
- the radiation source 830 may comprise an IR radiation source, or a UV radiation source. Furthermore, the radiation source 830 may comprise a plurality of radiation sources. For example, the radiation source 830 may comprise one or more IR lasers, or one or more UV lasers.
- the optics assembly 835 may comprise a sheet sizing device 840 configured to size the sheet of EM radiation 870. Additionally, the optics assembly 835 may comprise a sheet shaping device 850 configured to shape the sheet of EM radiation 870. Furthermore, the optics assembly 835 may comprise a sheet filtering device 855 configured to filter the sheet of EM radiation 870.
- the sheet sizing device 840, the sheet shaping device 850, or the sheet filtering device 855, or any combination of two or more thereof may include any number of optical devices to adjust one or more properties of the sheet of EM radiation 870.
- each device may include optical filters, optical lenses, optical mirrors, beam expanders, beam collimators, etc.
- Such optical manipulation devices as known to those skilled in the art of optics and EM wave propagation are suitable for the invention.
- optical system 800 is configured to size, shape, or filter, or both size and shape the sheet of EM radiation 870 for illumination of a fraction of the upper surface of substrate 825.
- the sheet of EM radiation 870 enters the process module through an optical window 860, and transmits through process space 810 to substrate 825. Although the sheet of EM radiation 870 is shown to span the diameter of substrate 825, the sheet of EM radiation 870 may illuminate only a fraction of the diameter or lateral dimension of substrate 825.
- Substrate 825 rests on substrate holder 820 in the process module.
- the sheet of EM radiation 870 may be translated or rotated relative to the substrate 828.
- the substrate holder 820 may be translated or rotated relative to the sheet of EM radiation 870.
- the substrate holder 820 can include a drive system configured to vertically and/or laterally translate (lateral (x-y) translation indicated by label 822), or rotate (rotation indicated by label 821 ), or both translate and rotate the substrate holder 820 to move the substrate 825 relative to the sheet of EM radiation 870. Additionally, the substrate holder 820 can include a motion control system coupled to the drive system, and configured to perform at least one of monitoring a position of substrate 825, adjusting the position of substrate 825, or controlling the position of substrate 825. [00133] The substrate holder 820 can further include a temperature control system that can be configured to elevate and/or control the temperature of substrate 825. Furthermore, the substrate holder 820 may or may not be configured to clamp substrate 825.
- substrate holder 820 may be configured to mechanically or electrically clamp substrate 825.
- the optical system 900 comprises a radiation source 930 and optics assembly 935, which are coupled to a process module and configured to illuminate substrate 925 disposed in the process module with EM radiation.
- the optical system 900 is configured to produce a raster scan a beam of EM radiation 971 to produce a sheet of EM radiation 970, and manipulate the beam of EM radiation 971 in such a manner to illuminate a region 980 on substrate 925.
- the radiation source 930 may comprise an IR radiation source, or a UV radiation source. Furthermore, the radiation source 930 may comprise a plurality of radiation sources. For example, the radiation source 930 may comprise one or more IR lasers, or one or more UV lasers.
- the optics assembly 935 may comprise a raster scanning device 955 configured to scan the beam of EM radiation 971 to produce the sheet of EM radiation 970.
- the raster scanning device 955 may comprise a rotating, multi- faceted mirror that scans the beam of EM radiation 971 across substrate 925 from location A to location B to form the sheet of EM radiation 970.
- the raster scanning device 955 may comprise a rotating, translucent disk that scans, via internal reflections within the rotating, translucent disk, the beam of EM radiation 971 across substrate 925 to form the sheet of EM radiation 970.
- the optics assembly 935 may comprise a beam sizing device 940 configured to size the beam of EM radiation 971. Additionally, the optics assembly 935 may comprise a beam shaping device 950 configured to shape the beam of EM radiation 971.
- the beam sizing device 940, or the beam shaping device 950, or both may include any number of optical devices to adjust one or more properties of the sheet of EM radiation 970.
- each device may include optical filters, optical lenses, optical mirrors, beam expanders, beam collimators, etc. Such optical manipulation devices as known to those skilled in the art of optics and EM wave propagation are suitable for the invention.
- the sheet of EM radiation 970 enters the process module through an optical window 960, and transmits through process space 910 to substrate 925.
- the sheet of EM radiation 970 is shown to span the diameter of substrate 925, the sheet of EM radiation 970 may illuminate only a fraction of the diameter or lateral dimension of substrate 925.
- Substrate 925 rests on substrate holder 920 in the process module.
- the sheet of EM radiation 970 may be translated or rotated relative to the substrate 925.
- the substrate holder 920 may be translated or rotated relative to the sheet of EM radiation 970.
- FIG. 13 illustrates a method of raster scanning substrate 925.
- the beam of EM radiation 971 is scanned in a first lateral direction 972 along substrate region 980, wherein for an instant in time the beam of EM radiation 971 illuminates pattern 982 on substrate 925. While the beam of EM radiation 971 is scanned, the substrate holder may translate substrate 925 in a second lateral direction 922 that may substantially perpendicular to the first lateral direction.
- the substrate holder 920 can include a drive system configured to vertically and/or laterally translate (lateral (x-y) translation indicated by label 922), or rotate (rotation indicated by label 921 ), or both translate and rotate the substrate holder 920 to move the substrate 925 relative to the sheet of EM radiation 970. Additionally, the substrate holder 920 can include a motion control system coupled to the drive system, and configured to perform at least one of monitoring a position of substrate 925, adjusting the position of substrate 925, or controlling the position of substrate 925. [00141] The substrate holder 920 can further include a temperature control system that can be configured to elevate and/or control the temperature of substrate 925. Furthermore, the substrate holder 920 may or may not be configured to clamp substrate 925.
- substrate holder 920 may be configured to mechanically or electrically clamp substrate 925.
- FIG. 14 a schematic illustration of an optical system 1000 for exposing a substrate to EM radiation is presented according to yet another embodiment.
- the optical system 1000 comprises a radiation source 1030 and optics assembly 1035, which are coupled to a process module and configured to illuminate substrate 1025 disposed in the process module with EM radiation.
- the optical system 1000 is configured to scan a beam of EM radiation 1070, and manipulate the beam of EM radiation 1070 in such a manner to illuminate a region 1080 on substrate 1025.
- the radiation source 1030 may comprise an IR radiation source, or a UV radiation source.
- the radiation source 1030 may comprise a plurality of radiation sources.
- the radiation source 1030 may comprise one or more IR lasers, or one or more UV lasers.
- the optics assembly 1035 may comprise a radiation scanning device 1090 configured to scan the beam of EM radiation 1070.
- the radiation scanning device 1090 may comprise one or more mirror galvanometers to scan the beam of EM radiation 1070 in lateral directions 1084.
- the one or more mirror galvanometers may comprise a 6200 Series High Speed Galvanometer commercially available from Cambridge Technology, Inc.
- the optics assembly 1035 may comprise a scanning motion control system coupled to the radiation scanning device 1090, and configured to perform at least one of monitoring a position of the beam of EM radiation 1070, adjusting the position of the beam of EM radiation 1070, or controlling the position of the beam of EM radiation 1070.
- the optics assembly 1035 may comprise a beam sizing device 1040 configured to size the beam of EM radiation 1070. Additionally, the optics assembly 1035 may comprise a beam shaping device 1050 configured to shape the beam of EM radiation 1070.
- the beam sizing device 1040, or the beam shaping device 1050, or both may include any number of optical devices to adjust one or more properties of the beam of EM radiation 1070.
- each device may include optical filters, optical lenses, optical mirrors, beam expanders, beam collimators, etc. Such optical manipulation devices as known to those skilled in the art of optics and EM wave propagation are suitable for the invention.
- the beam of EM radiation 1070 enters the process module through an optical window 1060, and transmits through process space 1010 to substrate 1025. As illustrated in FIG. 14, for each instant in time, the beam of EM radiation 1070 illuminates a pattern 1082 on region 1080 of substrate 1025.
- Substrate 1025 rests on substrate holder 1020 in the process module.
- the beam of EM radiation 1070 is scanned relative to the substrate 1025.
- the substrate holder 1020 may be translated or rotated relative to the beam of EM radiation 1070.
- the substrate holder 1020 can include a drive system configured to vertically and/or laterally translate (lateral (x-y) translation indicated by label 1022), or rotate (rotation indicated by label 1021 ), or both translate and rotate the substrate holder 1020 to move the substrate 1025 relative to the beam of EM radiation 1070.
- the substrate holder 1020 can include a motion control system coupled to the drive system, and configured to perform at least one of monitoring a position of substrate 1025, adjusting the position of substrate 1025, or controlling the position of substrate 1025.
- the substrate holder 1020 can further include a temperature control system that can be configured to elevate and/or control the temperature of substrate 1025. Furthermore, the substrate holder 1020 may or may not be configured to clamp substrate 1025. For instance, substrate holder 1020 may be configured to mechanically or electrically clamp substrate 1025. [00149] Referring now to FIG. 15A, a schematic illustration of a method for exposing a substrate to EM radiation is presented according to yet another embodiment. At a given instant in time, four regions 1 131 , 1 132, 1 133, 1 134 of substrate 1 125 are exposed to four sources of EM radiation. As an example, regions 1 131 and 1 133 may be exposed to IR radiation, while regions 1 132 and 1 134 are exposed to UV radiation.
- an optical window assembly 1 160 may comprise an array of optical windows 1 161 , 1 162, 1 163, 1 164, wherein the composition of each optical window is tailored for the spectrum of EM radiation to be transmitted there through.
- the composition of optical windows 1 161 and 1 163 may be tailored for IR transmission
- the composition of optical windows 1 162 and 1 164 may be tailored for UV transmission.
- sapphire, CaF 2 , BaF 2 , ZnSe, ZnS, Ge, or GaAs may be optimal for IR transmission.
- SiO x -containing materials such as quartz, fused silica, glass, CaF 2 , MgF 2 , etc.
- KCI may be optimal for IR transmission and UV transmission.
- the optical windows 1 161 , 1 162, 1 163, 1 164 may also be coated with an anti-reflective coating.
- FIG. 16A a schematic illustration of a method for exposing a substrate to EM radiation is presented according to yet another embodiment. At a given instant in time, two regions 1231 , 1232 of substrate 1225 are exposed to two sources of EM radiation 1271 , 1272.
- an optical window assembly 1260 may comprise an array of optical windows 1261 , 1262, wherein the composition of each optical window is tailored for the spectrum of EM radiation to be transmitted there through.
- the composition of optical window 1261 may be tailored for IR transmission
- the composition of optical window 1262 may be tailored for UV transmission.
- sapphire, CaF 2 , BaF 2 , ZnSe, ZnS, Ge, or GaAs may be optimal for IR transmission.
- SiO x -containing materials such as quartz, fused silica, glass, CaF 2 , MgF 2 , etc., may be optimal for UV transmission.
- KCI may be optimal for IR transmission and UV transmission.
- the optical windows 1261 , 1262 may also be coated with an anti-reflective coating.
- the optical system 1300 comprises a plurality of radiation sources 1310, 1312, 1314, 1316 and an optics assembly 1335, which are coupled to a process module and configured to illuminate a substrate disposed in the process module with EM radiation.
- Each radiation source 1310, 1312, 1314, 1316 can comprise a IR radiation source, or a UV radiation source.
- radiation source 1310, 1312, 1314, 1316 may comprise an IR laser, or a UV laser.
- the optical system 1300 comprises an array of dual beam combiners 1322 configured to receive a plurality of beams of EM radiation 1320 from a plurality of radiation sources 1310, 1312, 1314, 1316, and combine two or more of the plurality of beams 1320 into a collective beam 1330.
- the dual beam combiners 1322 may include a polarizing beam splitter utilized in reverse.
- the optical system 1300 may be configured to receive the plurality of beams of EM radiation 1320 from the plurality of radiation sources 1310, 1312, 1314, 1316, combine all of the plurality of beams of EM radiation 1320 into the collective beam 1330, and illuminate at least a portion of the substrate in the process module with the collective beam 1330.
- the collective beam 1330 may be sized and/or shaped using optics assembly, and may be directed to at least a portion of the substrate in the process chamber.
- a process module 1400 configured to treat a dielectric film on a substrate is shown according to yet another embodiment.
- the process module 1400 may be configured to cure a dielectric film.
- the process module 1400 comprises process chamber 410 configured to produce a clean, contaminant-free environment for curing a substrate 1425 resting on substrate holder 1420.
- Process module 1400 includes a first radiation source 1440 configured to expose substrate 1425 having the dielectric film to a first radiation source grouping of EM radiation.
- Process module 1400 further includes a second radiation source 1445 configured to expose substrate 1425 having the dielectric film to a second radiation source grouping of EM radiation.
- Each grouping of EM radiation is dedicated to a specific radiation wave-band, and includes single, multiple, narrow-band, or broadband EM wavelengths within that specific radiation wave-band.
- the first radiation source 1440 can include a UV radiation source configured to produce EM radiation in the UV spectrum.
- the second radiation source 1445 can include an IR radiation source configured to produce EM radiation in the IR spectrum.
- IR treatment and UV treatment of substrate 1425 can be performed in a single process module.
- the IR radiation source may include a broad-band IR source (e.g., polychromatic), or may include a narrow-band IR source (e.g., monochromatic).
- the IR radiation source may include one or more IR lamps, one or more IR LEDs, or one or more IR lasers (continuous wave (CW), tunable, or pulsed), or any combination thereof.
- the IR radiation source may include one or more IR lasers used in conjunction with any one of the optical systems described in FIGs. 8A, 8B, 9, 1 1 , 12, 14, and 17.
- the IR power density may range up to about 20 W/cm 2 .
- the IR power density may range from about 1 W/cm 2 to about 20 W/cm 2 .
- the IR radiation wavelength may range from approximately 1 micron to approximately 25 microns. Alternatively, the IR radiation wavelength may range from approximately 8 microns to approximately 14 microns. Alternatively, the IR radiation wavelength may range from approximately 8 microns to approximately 12 microns. Alternatively, the IR radiation wavelength may range from approximately 9 microns to approximately 10 microns.
- the IR radiation source may include a CO 2 laser system.
- the IR radiation source may include an IR element, such as a ceramic element or silicon carbide element, having a spectral output ranging from approximately 1 micron to approximately 25 microns, or the IR radiation source can include a semiconductor laser (diode), or ion, Tksapphire, or dye laser with optical parametric amplification.
- the UV radiation source may include a broad-band UV source (e.g., polychromatic), or may include a narrow-band UV source (e.g., monochromatic).
- the UV radiation source may include one or more UV lamps, one or more UV LEDs, or one or more UV lasers (continuous wave (CW), tunable, or pulsed), or any combination thereof.
- the UV radiation source may include one or more UV lamps.
- UV radiation may be generated, for instance, from a microwave source, an arc discharge, a dielectric barrier discharge, or electron impact generation.
- the UV power density may range from approximately 0.1 mW/cm 2 to approximately 2000 mW/cm 2 .
- the UV wavelength may range from approximately 100 nanometers (nm) to approximately 600 nm.
- the UV radiation may range from approximately 150 nm to approximately 400 nm.
- the UV radiation may range from approximately 150 nm to approximately 300 nm.
- the UV radiation may range from approximately 170 nm to approximately 240 nm.
- the UV radiation may range from approximately 200 nm to approximately 240 nm.
- the UV radiation source may include a direct current (DC) or pulsed lamp, such as a Deuterium (D 2 ) lamp, having a spectral output ranging from approximately 180 nm to approximately 500 nm, or the UV radiation source may include a semiconductor laser (diode), (nitrogen) gas laser, frequency-tripled (or quadrupled) Nd:YAG laser, or copper vapor laser.
- DC direct current
- D 2 Deuterium
- the UV radiation source may include a semiconductor laser (diode), (nitrogen) gas laser, frequency-tripled (or quadrupled) Nd:YAG laser, or copper vapor laser.
- the IR radiation source, or the UV radiation source, or both may include any number of optical device to adjust one or more properties of the output radiation.
- each source may further include optical filters, optical lenses, beam expanders, beam collimators, etc.
- optical manipulation devices as known to those skilled in the art of optics and EM wave propagation are suitable for the invention.
- the first radiation source grouping of EM radiation enters process chamber 1410 through a first optical window 1441.
- the second radiation source grouping of EM radiation enters process chamber 1410 through a second optical window 1446.
- the composition of the optical window may be selected to optimize transmission of the respective EM radiation.
- the substrate holder 1420 can further include a temperature control system that can be configured to elevate and/or control the temperature of substrate 1425.
- the temperature control system can be a part of a thermal treatment device 1430.
- the substrate holder 1420 can include one or more conductive heating elements embedded in substrate holder 1420 coupled to a power source and a temperature controller.
- each heating element can include a resistive heating element coupled to a power source configured to supply electrical power.
- the substrate holder 1420 could optionally include one or more radiative heating elements.
- the temperature of substrate 1425 can, for example, range from approximately 20 degrees C to approximately 600 degrees C, and desirably, the temperature may range from approximately 100 degrees C to approximately 600 degrees C.
- the temperature of substrate 1425 can range from approximately 300 degrees C to approximately 500 degrees C, or from approximately 350 degrees C to approximately 450 degrees C.
- the substrate holder 1420 can further include a drive system 1430 configured to vertically translate and rotate the substrate holder 1420 to move the substrate 1425 via piston member 1432 relative to the first radiation source 1440.
- the substrate holder 1420 further comprises a set of lift pins 1422 that are fixedly attached to process chamber 1410. As the substrate holder 1420 vertically translates, the set of lift pins 1422 may extend through the substrate holder 1420 to lift substrate 1425 to and from an upper surface of the substrate holder 1420.
- the substrate holder 1420 may be vertically translated to a first position, wherein substrate 1425 may be lifted from the upper surface of substrate holder 1420. In the first position, the substrate 1425 may be exposed to the second radiation source grouping of EM radiation. Alternatively, substrate 1425 may be vertically translated to any position for exposure to the second radiation source grouping of EM radiation. Furthermore, in the first position, the substrate 1425 may be transferred into and out of the process chamber 1410 through transfer opening 1412. [00168] As illustrated in FIG. 18B, the substrate holder 1420 may be vertically translated to a second position, wherein the set of lift pins 1422 no longer extend through the substrate holder 1420.
- the substrate 1425 may be exposed to the first radiation source grouping of EM radiation. Additionally, the substrate 1425 may be rotated during exposure. Furthermore, the substrate 1425 may be heated before, during, or after the exposure to the first radiation source grouping of EM radiation. Alternatively, substrate 1425 may be vertically translated to any position for exposure to the first radiation source grouping of EM radiation.
- process module 1400 can further include a gas injection system 1450 coupled to the process chamber 1410 and configured to introduce a purge gas to process chamber 1410.
- the purge gas can, for example, include an inert gas, such as a noble gas or nitrogen.
- the purge gas can include other gases, such as for example O 2 , H 2 , NH 3 , C x H y , or any combination thereof.
- process module 1400 can further include a vacuum pumping system 1455 coupled to process chamber 1410 and configured to evacuate the process chamber 1410. During a curing process, substrate 1425 can be subject to a purge gas environment with or without vacuum conditions.
- the process module 1400 may further comprise an in-situ metrology system (not shown) coupled to the process chamber 1410, and configured to measure a property of the dielectric film on the substrate 1425.
- the in-situ metrology system may comprise a laser interferometer.
- process module 1400 can include a controller 1460 coupled to process chamber 1410, substrate holder 1420, thermal treatment device 1435, drive system 1430, first radiation source 1440, second radiation source 1445, gas injection system 1450, and vacuum pumping system 1455.
- Controller 1460 includes a microprocessor, a memory, and a digital I/O port capable of generating control voltages sufficient to communicate and activate inputs to the process module 1400 as well as monitor outputs from the process module 1400.
- a program stored in the memory is utilized to interact with the process module 1400 according to a stored process recipe.
- the controller 1460 can be used to configure any number of processing elements (1410, 1420, 1430, 1435, 1440, 1445, 1450, or 1455), and the controller 1460 can collect, provide, process, store, and display data from processing elements.
- the controller 1460 can include a number of applications for controlling one or more of the processing elements.
- controller 1460 can include a graphic user interface (GUI) component (not shown) that can provide easy to use interfaces that enable a user to monitor and/or control one or more processing elements.
- GUI graphic user interface
- the method comprises: forming a SiCOH-containing dielectric film on a substrate using a chemical vapor deposition (CVD) process, wherein the CVD process uses diethoxymethylsilane (DEMS) and a pore-generating material; exposing the SiCOH-containing dielectric film to IR radiation for a first time duration sufficiently long to substantially remove the pore-generating material; exposing the SiCOH-containing dielectric film to UV radiation for a second time duration following the IR exposure; and heating the SiCOH-containing dielectric film during part or all of said second time duration.
- CVD chemical vapor deposition
- the exposure of the SiCOH-containing dielectric film to IR radiation can comprise IR radiation with a wavelength ranging from approximately 9 microns to approximately 10 microns (e.g., 9.4 microns).
- the exposure of the SiCOH-containing dielectric film to UV radiation can comprise UV radiation with a wavelength ranging from approximately 170 nanometers to approximately 240 nanometers (e.g., 222nm).
- the heating of the SiCOH- containing dielectric film can comprise heating the substrate to a temperature ranging from approximately 300 degrees C to approximately 500 degrees C.
- the IR exposure and the UV exposure may be performed in separate process chambers, or the IR exposure and the UV exposure may be performed in the same process chamber.
- the pore-generating material may comprise a terpene; a norborene; 5-dimethyl-1 ,4-cyclooctadiene; decahydronaphthalene; ethylbenzene; or limonene; or a combination of two or more thereof.
- the pore- generating material may comprise alpha-terpinene (ATRP).
- ATRP alpha-terpinene
- Table 1 provides data for a porous low-k dielectric film intended to have a dielectric constant of about 2.2 to 2.25.
- the porous low-k dielectric film comprises a porous SiCOH-containing dielectric film formed with a CVD process using a structure-forming material comprising diethoxymethylsilane (DEMS) and a pore-generating material comprising alpha-terpinene (ATRP).
- DEMS diethoxymethylsilane
- ATRP alpha-terpinene
- the "Pristine" SiCOH-containing dielectric film having a nominal thickness (Angstroms, A) and refractive index (n) is first exposed to IR radiation resulting in a "Post-IR” thickness (A) and "Post-IR” refractive index (n). Thereafter, the "Post-IR” SiCOH-containing dielectric film is exposed to UV radiation while being thermally heated resulting in a "Post-UV+Heating" thickness (A) and "Post-UV+Heating” refractive index (n).
- SiCOH-containing dielectric films formed using the same CVD process, were cured without exposure to IR radiation. Without IR exposure, the "Post-UV+Heating" refractive index ranges from about 1 .408 to about 1 .434, which is significantly higher than the results provided in Table 1 .
- the higher refractive index may indicate an excess of residual pore-generating material in the film, e.g., less porous film, and/ot oxidation of the film.
- a method of preparing a porous low-k dielectric film on a substrate comprises: forming a SiCOH-containing dielectric film on a substrate using a chemical vapor deposition (CVD) process, wherein the CVD process uses diethoxymethylsilane (DEMS) and a pore-generating material; exposing the SiCOH-containing dielectric film to first IR radiation for a first time duration sufficiently long to substantially remove the pore-generating material; exposing the SiCOH-containing dielectric film to UV radiation for a second time duration following the first IR exposure; exposing the SiCOH-containing dielectric film to second IR radiation for a third time duration during the UV exposure; and exposing the SiCOH-containing dielectric film to third IR radiation for a fourth time duration following the UV exposure.
- CVD chemical vapor deposition
- the method may further comprise heating the SiCOH-containing dielectric film during part or all of the second time duration. Additionally, the second time duration may coincide with the second time duration.
- the exposure of the SiCOH-containing dielectric film to first IR radiation can comprise IR radiation with a wavelength ranging from approximately 9 microns to approximately 10 microns (e.g., 9.4 microns).
- the exposure of the SiCOH-containing dielectric film to UV radiation can comprise UV radiation with a wavelength ranging from approximately 170 nanometers to approximately 230 nanometers (e.g., 222nm).
- the exposure of the SiCOH- containing dielectric film to second IR radiation can comprise IR radiation with a wavelength ranging from approximately 9 microns to approximately 10 microns (e.g., 9.4 microns).
- the exposure of the SiCOH-containing dielectric film to third IR radiation can comprise IR radiation with a wavelength ranging from approximately 9 microns to approximately 10 microns (e.g., 9.4 microns).
- the heating of the SiCOH-containing dielectric film can comprise heating the substrate to a temperature ranging from approximately 300 degrees C to approximately 500 degrees C.
- the pore-generating material may comprise a terpene; a norborene; 5-dimethyl-1 ,4-cyclooctadiene; decahydronaphthalene; ethylbenzene; or limonene; or a combination of two or more thereof.
- the pore- generating material may comprise alpha-terpinene (ATRP).
- Table 2 provides data for a porous low-k dielectric film intended to have a dielectric constant of about 2.2 to 2.25.
- the porous low-k dielectric film comprises a porous SiCOH-containing dielectric film formed with a CVD process using a structure-forming material comprising diethoxymethylsilane (DEMS) and a pore-generating material comprising alpha-terpinene (ATRP).
- DEMS diethoxymethylsilane
- ATRP alpha-terpinene
- the "Pristine" SiCOH-containing dielectric film having a nominal thickness (Angstroms, A) and refractive index (n) is cured using two processes, namely: (1 ) a conventional UV/Thermal process (i.e., no IR exposure); and (2) a curing process wherein the pristine film is exposed to IR radiation (9.4 micron), followed by exposure to IR radiation (9.4 micron) and UV radiation (222 nm), followed by exposure to IR radiation (9.4 micron).
- Table 2 provides the "Post-UV/Thermal” thickness (A) and "Post- UV/Thermal” refractive index (n) for the conventional UV/Thermal process, and the "Post-IR+UV/IR+IR” thickness (A) and "Post-IR+UV/IR+IR” refractive index (n) for the IR+UV/IR+IR process. Additionally, the shrinkage (%) in film thickness is provided Post-UV/Thermal and Post-IR+UV/IR+IR. Furthermore, the dielectric constant (k), the elastic modulus (E) (GPa) and the hardness (H) (GPa) are provided for the resultant, cured porous low-k dielectric film.
- k dielectric constant
- E elastic modulus
- H hardness
- the use of IR radiation preceding UV radiation and heating, as well as during and after the UV exposure leads to dielectric constants less than 2.1.
- the mechanical properties (E and H) are approximately the same for the two curing processes.
- IR exposure and UV exposure can lead to the formation of a diethoxymethylsilane (DEMS)-based, porous dielectric film comprising a dielectric constant of about 2.1 or less, a refractive index of about 1 .31 or less, an elastic modulus of about 4 GPa or greater, and a hardness of about 0.45 GPa or greater.
- DEMS diethoxymethylsilane
- Table 3 provides data for a porous low-k dielectric film intended to have a dielectric constant of about 2.
- the porous low-k dielectric film comprises a porous SiCOH-containing dielectric film formed with a CVD process using a structure-forming material comprising diethoxymethylsilane (DEMS) and a pore-generating material comprising alpha-terpinene (ATRP).
- DEMS diethoxymethylsilane
- ATRP alpha-terpinene
- the pristine SiCOH-containing dielectric film is cured using three processes, namely: (1 ) a conventional UV/Thermal process (i.e., no IR exposure); (2) a curing process wherein the pristine film is exposed to IR radiation only (9.4 micron); (3) a curing process wherein the pristine film is exposed to IR radiation (9.4 micron) followed by a conventional UV/Thermal process; and (4) a curing process wherein the pristine film is exposed to IR radiation (9.4 micron), followed by exposure to IR radiation (9.4 micron) and UV radiation (222 nm), followed by exposure to IR radiation (9.4 micron).
- Table 3 provides the resulting refractive index (n), shrinkage (%), dielectric constant (k), elastic modulus (E) (GPa) and hardness (H) (GPa) following each of the curing processes.
- n refractive index
- k dielectric constant
- E elastic modulus
- H hardness
- the mechanical properties (E and H) can be improved by using UV radiation.
- IR exposure and UV exposure can lead to the formation of a diethoxymethylsilane (DEMS)-based, porous dielectric film comprising a dielectric constant of about 1.7 or less, a refractive index of about 1 .17 or less, an elastic modulus of about 1 .5 GPa or greater, and a hardness of about 0.2 GPa or greater.
- DEMS diethoxymethylsilane
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020117008718A KR101690804B1 (en) | 2008-09-16 | 2009-09-14 | Dielectric material treatment system and method of operating |
CN200980136347.6A CN102159330B (en) | 2008-09-16 | 2009-09-14 | Dielectric material treatment system and method of operating |
JP2011527032A JP2012503313A (en) | 2008-09-16 | 2009-09-14 | Dielectric material processing system and method of operating the system |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/211,675 US20100067886A1 (en) | 2008-09-16 | 2008-09-16 | Ir laser optics system for dielectric treatment module |
US12/211,598 | 2008-09-16 | ||
US12/211,675 | 2008-09-16 | ||
US12/211,640 | 2008-09-16 | ||
US12/211,598 US20100065758A1 (en) | 2008-09-16 | 2008-09-16 | Dielectric material treatment system and method of operating |
US12/211,640 US8895942B2 (en) | 2008-09-16 | 2008-09-16 | Dielectric treatment module using scanning IR radiation source |
US12/211,681 | 2008-09-16 | ||
US12/211,681 US20100068897A1 (en) | 2008-09-16 | 2008-09-16 | Dielectric treatment platform for dielectric film deposition and curing |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010033469A2 true WO2010033469A2 (en) | 2010-03-25 |
WO2010033469A3 WO2010033469A3 (en) | 2010-05-14 |
Family
ID=42040085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2009/056871 WO2010033469A2 (en) | 2008-09-16 | 2009-09-14 | Dielectric material treatment saystem and method of operating |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2012503313A (en) |
KR (1) | KR101690804B1 (en) |
CN (1) | CN102159330B (en) |
WO (1) | WO2010033469A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012118119A1 (en) * | 2011-03-03 | 2012-09-07 | 東京エレクトロン株式会社 | Annealing method and annealing equipment |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102621107A (en) * | 2012-03-09 | 2012-08-01 | 中国科学院长春光学精密机械与物理研究所 | In-situ optical measurement device for aerospace material space environment irradiation measurement |
CN104752304B (en) * | 2013-12-31 | 2018-08-24 | 北京北方华创微电子装备有限公司 | A kind of reaction chamber and plasma processing device |
CN105336668B (en) * | 2014-06-27 | 2020-09-08 | 中芯国际集成电路制造(上海)有限公司 | Method for forming dielectric layer |
CN104209254B (en) * | 2014-08-15 | 2016-05-11 | 上海华力微电子有限公司 | For the ultraviolet light polymerization process of porous low dielectric constant material |
WO2016148855A1 (en) * | 2015-03-19 | 2016-09-22 | Applied Materials, Inc. | Method and apparatus for reducing radiation induced change in semiconductor structures |
KR102380710B1 (en) | 2017-10-30 | 2022-03-29 | 어플라이드 머티어리얼스, 인코포레이티드 | Multizone spot heating in EPI |
KR102249802B1 (en) * | 2018-07-13 | 2021-05-10 | 세메스 주식회사 | Appparatus for processing substrate |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7090966B2 (en) * | 2003-03-26 | 2006-08-15 | Seiko Epson Corporation | Process of surface treatment, surface treating device, surface treated plate, and electro-optic device, and electronic equipment |
US20060249078A1 (en) * | 2005-05-09 | 2006-11-09 | Thomas Nowak | High efficiency uv curing system |
US20070105401A1 (en) * | 2005-11-09 | 2007-05-10 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
US20070109003A1 (en) * | 2005-08-19 | 2007-05-17 | Kla-Tencor Technologies Corp. | Test Pads, Methods and Systems for Measuring Properties of a Wafer |
US20080063809A1 (en) * | 2006-09-08 | 2008-03-13 | Tokyo Electron Limited | Thermal processing system for curing dielectric films |
US20080067425A1 (en) * | 2006-03-17 | 2008-03-20 | Applied Materials, Inc. | Apparatus and method for exposing a substrate to uv radiation using asymmetric reflectors |
US7405168B2 (en) * | 2005-09-30 | 2008-07-29 | Tokyo Electron Limited | Plural treatment step process for treating dielectric films |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0770535B2 (en) * | 1986-06-25 | 1995-07-31 | ソニー株式会社 | Method for manufacturing semiconductor device |
JPH01103824A (en) * | 1988-06-24 | 1989-04-20 | Fujitsu Ltd | Laser annealing process |
JPH0562924A (en) * | 1991-09-04 | 1993-03-12 | Sony Corp | Laser annealing device |
TW466772B (en) * | 1997-12-26 | 2001-12-01 | Seiko Epson Corp | Method for producing silicon oxide film, method for making semiconductor device, semiconductor device, display, and infrared irradiating device |
US6121130A (en) * | 1998-11-16 | 2000-09-19 | Chartered Semiconductor Manufacturing Ltd. | Laser curing of spin-on dielectric thin films |
CN1421904A (en) * | 2001-09-06 | 2003-06-04 | 联华电子股份有限公司 | Production process of film of low-dielectric constant material |
KR100944379B1 (en) * | 2003-06-02 | 2010-02-26 | 주성엔지니어링(주) | Apparatus for wafer loading, and the method of wafer loading using the same |
JP4361762B2 (en) * | 2003-06-11 | 2009-11-11 | 東京エレクトロン株式会社 | Heat treatment method |
JP2005032740A (en) * | 2003-07-07 | 2005-02-03 | Dainippon Screen Mfg Co Ltd | Apparatus and method for forming film |
US20080132045A1 (en) * | 2004-11-05 | 2008-06-05 | Woo Sik Yoo | Laser-based photo-enhanced treatment of dielectric, semiconductor and conductive films |
US20060165904A1 (en) * | 2005-01-21 | 2006-07-27 | Asm Japan K.K. | Semiconductor-manufacturing apparatus provided with ultraviolet light-emitting mechanism and method of treating semiconductor substrate using ultraviolet light emission |
SG136078A1 (en) * | 2006-03-17 | 2007-10-29 | Applied Materials Inc | Uv cure system |
-
2009
- 2009-09-14 WO PCT/US2009/056871 patent/WO2010033469A2/en active Application Filing
- 2009-09-14 JP JP2011527032A patent/JP2012503313A/en active Pending
- 2009-09-14 CN CN200980136347.6A patent/CN102159330B/en not_active Expired - Fee Related
- 2009-09-14 KR KR1020117008718A patent/KR101690804B1/en active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7090966B2 (en) * | 2003-03-26 | 2006-08-15 | Seiko Epson Corporation | Process of surface treatment, surface treating device, surface treated plate, and electro-optic device, and electronic equipment |
US20060249078A1 (en) * | 2005-05-09 | 2006-11-09 | Thomas Nowak | High efficiency uv curing system |
US20070109003A1 (en) * | 2005-08-19 | 2007-05-17 | Kla-Tencor Technologies Corp. | Test Pads, Methods and Systems for Measuring Properties of a Wafer |
US7405168B2 (en) * | 2005-09-30 | 2008-07-29 | Tokyo Electron Limited | Plural treatment step process for treating dielectric films |
US20070105401A1 (en) * | 2005-11-09 | 2007-05-10 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
US20080067425A1 (en) * | 2006-03-17 | 2008-03-20 | Applied Materials, Inc. | Apparatus and method for exposing a substrate to uv radiation using asymmetric reflectors |
US20080063809A1 (en) * | 2006-09-08 | 2008-03-13 | Tokyo Electron Limited | Thermal processing system for curing dielectric films |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012118119A1 (en) * | 2011-03-03 | 2012-09-07 | 東京エレクトロン株式会社 | Annealing method and annealing equipment |
JPWO2012118119A1 (en) * | 2011-03-03 | 2014-07-07 | 東京エレクトロン株式会社 | Annealing method and annealing apparatus |
Also Published As
Publication number | Publication date |
---|---|
KR101690804B1 (en) | 2016-12-28 |
CN102159330A (en) | 2011-08-17 |
KR20110081981A (en) | 2011-07-15 |
WO2010033469A3 (en) | 2010-05-14 |
CN102159330B (en) | 2014-11-12 |
JP2012503313A (en) | 2012-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8895942B2 (en) | Dielectric treatment module using scanning IR radiation source | |
US20100065758A1 (en) | Dielectric material treatment system and method of operating | |
US7858533B2 (en) | Method for curing a porous low dielectric constant dielectric film | |
US8242460B2 (en) | Ultraviolet treatment apparatus | |
US7977256B2 (en) | Method for removing a pore-generating material from an uncured low-k dielectric film | |
US10068765B2 (en) | Multi-step system and method for curing a dielectric film | |
US8956457B2 (en) | Thermal processing system for curing dielectric films | |
US20090075491A1 (en) | Method for curing a dielectric film | |
JP5490024B2 (en) | Method of curing porous low dielectric constant dielectric film | |
WO2010033469A2 (en) | Dielectric material treatment saystem and method of operating | |
US20100068897A1 (en) | Dielectric treatment platform for dielectric film deposition and curing | |
US20100067886A1 (en) | Ir laser optics system for dielectric treatment module | |
US20090226695A1 (en) | Method for treating a dielectric film with infrared radiation | |
US20090226694A1 (en) | POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980136347.6 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09815037 Country of ref document: EP Kind code of ref document: A2 |
|
ENP | Entry into the national phase |
Ref document number: 2011527032 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20117008718 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09815037 Country of ref document: EP Kind code of ref document: A2 |