WO2009028145A1 - High-intensity light-emitting diode manufacturing method, light-emitting element substrate and high intensity light-emitting diode - Google Patents

High-intensity light-emitting diode manufacturing method, light-emitting element substrate and high intensity light-emitting diode Download PDF

Info

Publication number
WO2009028145A1
WO2009028145A1 PCT/JP2008/002216 JP2008002216W WO2009028145A1 WO 2009028145 A1 WO2009028145 A1 WO 2009028145A1 JP 2008002216 W JP2008002216 W JP 2008002216W WO 2009028145 A1 WO2009028145 A1 WO 2009028145A1
Authority
WO
WIPO (PCT)
Prior art keywords
iii
ratio
growth
emitting diode
light
Prior art date
Application number
PCT/JP2008/002216
Other languages
French (fr)
Japanese (ja)
Inventor
Masataka Watanabe
Original Assignee
Shin-Etsu Handotai Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co., Ltd. filed Critical Shin-Etsu Handotai Co., Ltd.
Priority to JP2009529974A priority Critical patent/JP5278323B2/en
Publication of WO2009028145A1 publication Critical patent/WO2009028145A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A manufacturing method of a high-intensity light-emitting diode comprising a step of forming a group III-V compound semiconductor as a second current diffusion layer by HVPE growth over a surface from which a GaAs substrate has been eliminated. The step of forming the group III-V compound semiconductor is performed while a III/V ratio of a supplied material gas at an initial part of the formation is set at 3 or higher, and thereafter, the III/V ratio is varied to a relatively lower value. When the growth is started out for forming the second current diffusion layer with the III/V ratio at 3 or higher, a growth temperature is controlled between 550°C and 700°C, and when the III/V ratio is set at 5 or higher, between 550°C and 730°C, both of the temperature ranges being lower than that used during the growth with the relatively lower III/V ratio. The temperature is then increased to the same temperature as that used during the growth with the relatively lower III/V ratio. In this way, it is possible to prevent damages in the grown layer, which occur during the step of epitaxially growing the second current diffusion layer over the surface from which the GaAs substrate has been eliminated, and suppress micropore defects that may occur in an interface at the initial stage of thegrowth.
PCT/JP2008/002216 2007-08-30 2008-08-14 High-intensity light-emitting diode manufacturing method, light-emitting element substrate and high intensity light-emitting diode WO2009028145A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009529974A JP5278323B2 (en) 2007-08-30 2008-08-14 Manufacturing method of high brightness light emitting diode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007223705 2007-08-30
JP2007-223705 2007-08-30

Publications (1)

Publication Number Publication Date
WO2009028145A1 true WO2009028145A1 (en) 2009-03-05

Family

ID=40386888

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002216 WO2009028145A1 (en) 2007-08-30 2008-08-14 High-intensity light-emitting diode manufacturing method, light-emitting element substrate and high intensity light-emitting diode

Country Status (3)

Country Link
JP (1) JP5278323B2 (en)
TW (1) TWI411126B (en)
WO (1) WO2009028145A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011253893A (en) * 2010-06-01 2011-12-15 Shin Etsu Handotai Co Ltd Method of manufacturing compound semiconductor substrate and compound semiconductor substrate

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269145A (en) * 1999-03-17 2000-09-29 Sharp Corp Crystal growing method of compound semiconductor and semiconductor light emitting element
JP2003023177A (en) * 2001-07-06 2003-01-24 Sharp Corp Method of manufacturing semiconductor light emitting element
JP2004260109A (en) * 2003-02-27 2004-09-16 Shin Etsu Handotai Co Ltd Method of manufacturing light-emitting element, composite translucent substrate, and light-emitting element
JP2004296707A (en) * 2003-03-26 2004-10-21 Shin Etsu Handotai Co Ltd Light emitting device, method for manufacturing the same and compound translucent substrate
JP2005150664A (en) * 2003-11-19 2005-06-09 Shin Etsu Handotai Co Ltd Light-emitting element and its manufacturing method
JP2005277218A (en) * 2004-03-25 2005-10-06 Shin Etsu Handotai Co Ltd Light-emitting element and its manufacturing method
WO2007088841A1 (en) * 2006-01-31 2007-08-09 Shin-Etsu Handotai Co., Ltd. Light-emitting device and method for manufacturing same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269145A (en) * 1999-03-17 2000-09-29 Sharp Corp Crystal growing method of compound semiconductor and semiconductor light emitting element
JP2003023177A (en) * 2001-07-06 2003-01-24 Sharp Corp Method of manufacturing semiconductor light emitting element
JP2004260109A (en) * 2003-02-27 2004-09-16 Shin Etsu Handotai Co Ltd Method of manufacturing light-emitting element, composite translucent substrate, and light-emitting element
JP2004296707A (en) * 2003-03-26 2004-10-21 Shin Etsu Handotai Co Ltd Light emitting device, method for manufacturing the same and compound translucent substrate
JP2005150664A (en) * 2003-11-19 2005-06-09 Shin Etsu Handotai Co Ltd Light-emitting element and its manufacturing method
JP2005277218A (en) * 2004-03-25 2005-10-06 Shin Etsu Handotai Co Ltd Light-emitting element and its manufacturing method
WO2007088841A1 (en) * 2006-01-31 2007-08-09 Shin-Etsu Handotai Co., Ltd. Light-emitting device and method for manufacturing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011253893A (en) * 2010-06-01 2011-12-15 Shin Etsu Handotai Co Ltd Method of manufacturing compound semiconductor substrate and compound semiconductor substrate

Also Published As

Publication number Publication date
JP5278323B2 (en) 2013-09-04
JPWO2009028145A1 (en) 2010-11-25
TWI411126B (en) 2013-10-01
TW200929616A (en) 2009-07-01

Similar Documents

Publication Publication Date Title
US9012253B2 (en) Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods
US11430907B2 (en) Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
WO2008143166A1 (en) Method for manufacturing semiconductor crystal of nitride of element belonging to group-iii, semiconductor substrate formed of nitride of element belonging to group-iii, and semiconductor light emission device
CN108352307B (en) Method for producing group III nitride semiconductor substrate, and group III nitride semiconductor substrate
WO2007091920A3 (en) A method of growing semiconductor heterostructures based on gallium nitride
WO2008060349A3 (en) Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition
JP2013512567A5 (en)
EP2472566A3 (en) Template, method for manufacturing the template and method for manufacturing vertical type nitride-based semiconductor light emitting device using the template
US9064685B2 (en) Semiconductor substrate and method of forming
EP1724378A3 (en) Epitaxial substrate, semiconductor element, manufacturing method for epitaxial substrate and method for unevenly distributing dislocations in group III nitride crystal
US10475951B2 (en) Optoelectronic semiconductor chip and method for the production thereof
CN104681679B (en) UV LED and preparation method
JP2007251178A (en) Nitride semiconductor single crystal substrate, its manufacturing method, and method of manufacturing vertical structure nitride light emitting element using the same
CN105098001B (en) Luminaire and its manufacturing method
WO2019123763A1 (en) Method for producing group iii nitride semiconductor substrate
WO2009028145A1 (en) High-intensity light-emitting diode manufacturing method, light-emitting element substrate and high intensity light-emitting diode
CN102067347A (en) Method for fabricating InGaN-based multi-quantum well layers
WO2004019390A3 (en) Mbe growth of an algan layer or algan multilayer structure
JP2010524267A (en) (AL, IN, GA, B) Method of depositing N
CN204927320U (en) Light -emitting apparatus
JP2003173977A (en) Method for manufacturing compound semiconductor
JP7133786B2 (en) III-nitride semiconductor and manufacturing method thereof
WO2008123242A1 (en) Substrate for epitaxial growth and epitaxial growth process
TW200616049A (en) Process for producing a compound semiconductor epitaxial substrate having pn junction
KR101532267B1 (en) Method for manufacturing nitride-based light emitting device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08828428

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009529974

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08828428

Country of ref document: EP

Kind code of ref document: A1