WO2008009961A3 - Improvements in hydrogen trapping - Google Patents

Improvements in hydrogen trapping Download PDF

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Publication number
WO2008009961A3
WO2008009961A3 PCT/GB2007/002765 GB2007002765W WO2008009961A3 WO 2008009961 A3 WO2008009961 A3 WO 2008009961A3 GB 2007002765 W GB2007002765 W GB 2007002765W WO 2008009961 A3 WO2008009961 A3 WO 2008009961A3
Authority
WO
WIPO (PCT)
Prior art keywords
hydrogen
trapping
hydrogen atoms
trapping region
thermal energy
Prior art date
Application number
PCT/GB2007/002765
Other languages
French (fr)
Other versions
WO2008009961A2 (en
Inventor
Robert William Mccullough
Harold Samuel Gamble
William Graham
Robert Bower
Original Assignee
Univ Belfast
Robert William Mccullough
Harold Samuel Gamble
William Graham
Robert Bower
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Belfast, Robert William Mccullough, Harold Samuel Gamble, William Graham, Robert Bower filed Critical Univ Belfast
Publication of WO2008009961A2 publication Critical patent/WO2008009961A2/en
Publication of WO2008009961A3 publication Critical patent/WO2008009961A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)

Abstract

A method of trapping hydrogen in a material (1), comprising providing a hydrogen trapping region (3) in the material, bombarding the material with thermal energy hydrogen atoms, and allowing at least some of the hydrogen atoms to interact with the hydrogen trapping region, effecting trapping of at least some of the hydrogen atoms in the hydrogen trapping region of the material. The use of thermal energy hydrogen atoms results in a relatively 'damage free' process, which will not give rise to ionisation and nuclear stopping processes involved in bombardment with energetic hydrogen ions.
PCT/GB2007/002765 2006-07-21 2007-07-20 Improvements in hydrogen trapping WO2008009961A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0614498.4 2006-07-21
GBGB0614498.4A GB0614498D0 (en) 2006-07-21 2006-07-21 Improvements in Hydrogen Trapping

Publications (2)

Publication Number Publication Date
WO2008009961A2 WO2008009961A2 (en) 2008-01-24
WO2008009961A3 true WO2008009961A3 (en) 2008-07-31

Family

ID=36998482

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2007/002765 WO2008009961A2 (en) 2006-07-21 2007-07-20 Improvements in hydrogen trapping

Country Status (2)

Country Link
GB (1) GB0614498D0 (en)
WO (1) WO2008009961A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103079567A (en) * 2010-04-17 2013-05-01 拜尔健康护理有限责任公司 Synthetic metabolites of fluoro substituted omega-carboxyaryl diphenyl urea for the treatment and prevention diseases and conditions

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
US20040171196A1 (en) * 2002-08-08 2004-09-02 Walitzki Hans J. Method and apparatus for transferring a thin layer of semiconductor material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
US20040171196A1 (en) * 2002-08-08 2004-09-02 Walitzki Hans J. Method and apparatus for transferring a thin layer of semiconductor material

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
G. HESS ET AL.: "Evolution of subsurface hydrogen from boron-doped Si (100)", APPLIE PHYSICS LETTERS, vol. 71, no. 15, 13 October 1997 (1997-10-13), pages 2184 - 2186, XP002480120 *
HÖCHBAUER T ET AL: "The influence of boron ion implantation on hydrogen blister formation in n-type silicon", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 86, no. 8, 15 October 1999 (1999-10-15), pages 4176 - 4183, XP012048778, ISSN: 0021-8979 *
TONG Q-Y ET AL: "A smarter-cut approach to low temperature silicon layer transfer", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, vol. 72, no. 1, 5 January 1998 (1998-01-05), pages 49 - 51, XP012019735, ISSN: 0003-6951 *
TSCHERSICH K G ET AL: "Formation of an atomic hydrogen beam by a hot capillary", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 84, no. 8, 15 October 1998 (1998-10-15), pages 4065 - 4070, XP012045994, ISSN: 0021-8979 *

Also Published As

Publication number Publication date
GB0614498D0 (en) 2006-08-30
WO2008009961A2 (en) 2008-01-24

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