WO2008009961A2 - Improvements in hydrogen trapping - Google Patents

Improvements in hydrogen trapping Download PDF

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Publication number
WO2008009961A2
WO2008009961A2 PCT/GB2007/002765 GB2007002765W WO2008009961A2 WO 2008009961 A2 WO2008009961 A2 WO 2008009961A2 GB 2007002765 W GB2007002765 W GB 2007002765W WO 2008009961 A2 WO2008009961 A2 WO 2008009961A2
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WO
WIPO (PCT)
Prior art keywords
hydrogen
trapping
region
hydrogen atoms
atoms
Prior art date
Application number
PCT/GB2007/002765
Other languages
French (fr)
Other versions
WO2008009961A3 (en
Inventor
Robert William Mccullough
Harold Samuel Gamble
William Graham
Robert Bower
Original Assignee
The Queen's University Of Belfast
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Queen's University Of Belfast filed Critical The Queen's University Of Belfast
Publication of WO2008009961A2 publication Critical patent/WO2008009961A2/en
Publication of WO2008009961A3 publication Critical patent/WO2008009961A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

A method of trapping hydrogen in a material (1), comprising providing a hydrogen trapping region (3) in the material, bombarding the material with thermal energy hydrogen atoms, and allowing at least some of the hydrogen atoms to interact with the hydrogen trapping region, effecting trapping of at least some of the hydrogen atoms in the hydrogen trapping region of the material. The use of thermal energy hydrogen atoms results in a relatively 'damage free' process, which will not give rise to ionisation and nuclear stopping processes involved in bombardment with energetic hydrogen ions.

Description

Improvements in Hydrogen Trapping
The invention relates to improvements in hydrogen trapping, particularly in the trapping of hydrogen in silicon.
In recent years, there has been considerable interest in the trapping of various substances in various materials. For example, investigations have been carried out into the bombardment of silicon with hydrogen ions, and the trapping of the hydrogen ions within the silicon. Such techniques have been used in the production of silicon on insulator material, used in, for example, silicon microcircuits. However, it is known that the bombardment of the silicon in this way, causes damage to the silicon material. This is undesirable, and improvements in the trapping of substances such as hydrogen are being sought.
According to the invention there is provided a method of trapping hydrogen in a material, comprising providing a hydrogen trapping region in the material, bombarding the material with thermal energy hydrogen atoms, and allowing at least some of the hydrogen atoms to interact with the hydrogen trapping region, effecting trapping of at least some of the hydrogen atoms in the hydrogen trapping region of the material.
The use of thermal energy hydrogen atoms results in a relatively 'damage free' process, which will not give rise to ionisation and nuclear stopping processes involved in bombardment with energetic hydrogen ions.
Providing a hydrogen trapping region in the material may comprise embedding a hydrogen trapping substance into a region of the material. The hydrogen trapping substance may be introduced via at least one surface of the material and at least a proportion thereof may travel through a part of the material to embed in a region of the material to form the hydrogen trapping region in the material. The hydrogen trapping substance may embed in the region due to bonding with the structure of the material in the region. The hydrogen trapping substance may be boron.
Bonding of at least a proportion of the hydrogen trapping substance with the material in the hydrogen trapping region may cause a decrease in the trapping capability of the hydrogen trapping substance. The method may comprise treating the material to activate the trapping capability of the hydrogen trapping substance. Treating the material may comprise performing a rapid thermal annealing process on the material after introduction of the hydrogen trapping substance into the material. The rapid thermal annealing process may comprise heating the material to approximately 900sC.
The thermal energy hydrogen atoms may be provided by a source which emits a highly dissociated beam of hydrogen molecules.
Allowing the hydrogen atoms to interact with the hydrogen trapping region may comprise allowing the hydrogen atoms to diffuse to the hydrogen trapping region. Allowing the hydrogen atoms to interact with the hydrogen trapping region may comprise causing the hydrogen atoms to diffuse to the hydrogen trapping region by providing a hydrogen concentration gradient at the surface of the material.
Effecting trapping of at least some of the hydrogen atoms in the hydrogen trapping region of the material may be enhanced by heating the material. The material may be heated to a temperature of less than 5009C. The material may be heated to a temperature of approximately 400QC. The method may comprise removing an oxide layer from the material. This may be carried out after provision of the hydrogen trapping region and prior to or during bombardment with the thermal hydrogen energy atoms.
Bombardment of the material with thermal energy hydrogen atoms, may cause the formation of bubbles on at least one surface of the material. The bubbles may have a frequency of occurrence which is used to obtain an indication of the amount of hydrogen trapped in the material. The bubbles may have a size, particularly an average height and diameter, which is used to obtain an indication of the amount of hydrogen trapped in the material.
Trapping the hydrogen in the hydrogen trapping region of the material may cause formation of one or more platelets in the region of the material.
The material may be at least substantially comprised of silicon.
An embodiment of the invention will now be described, by way of example only, with reference to the accompanying drawing, which is a schematic cross sectional representation of a material in which hydrogen has been trapped using the method according to the invention.
Referring to the figure , the material 1 comprises silicon. A part of the silicon material 1 may be treated prior to the trapping of hydrogen therein. For example, a part of the silicon material may be pre-treated to form a part of a semiconductor device.
The hydrogen trapping method first comprises providing a hydrogen trapping region in the silicon material 1. This comprises embedding boron into a region 3 of the material 1. Boron is a hydrogen trapping substance, due to its relatively high probability of interaction with hydrogen. Boron ions, having substantially the same energy, are introduced into the silicon material 1 via a surface 5 of the material 1 , and travel into the material 1. The interaction of the boron ions with the material is determined by energy loss processes of ionisation and nuclear stopping. As the boron ions travel through the silicon material 1 , they will collide with atoms of silicon, and lose energy through collisions with electrons and silicon nuclei. The probability of interaction of the boron ions and the silicon atoms will depend on the energy of the boron ions. At a particular energy, E(σmaχ), the energy loss will be at a maximum. In this region of the material 1 , a majority of the boron ions come to rest. A majority of the boron ions will therefore be embedded into a well-defined region of the silicon material 1 , thereby providing a well-defined hydrogen trapping region 3. Embedding the boron in the silicon material, will cause damage to the crystalline structure of the silicon, changing it to an amorphous structure. The damage is caused by boron ions displacing silicon atoms from the crystalline structure.
In the 'as-embedded' state, the periodicity of the silicon around the boron will be disturbed, or amorphous, many of the boron ions will be interstitial, and will not be electrically active and hydrogen trapping does not occur to any substantial degree. Hydrogen trapping can be achieved by performing a rapid thermal annealing process on the silicon material 1 , which comprises heating the material to approximately 900sC. After the annealing process, the boron ions should be sitting in silicon sites, i.e. silicon atoms are substituted by boron. The boron ions will be covalently bonded to neighbouring sites, and so are electrically active, i.e. have a local negative charge with a free positive hole. The boron ions are then better able to trap hydrogen. The method of hydrogen trapping may also comprise removing a native silicon oxide layer from the surface 5 of the material 1. This is carried out by treating the surface 5 with hydrofluoric (HF) acid. Removal of the silicon oxide layer can also be achieved by the bombardment of the thermal energy hydrogen atoms. However, this takes considerably longer than removal using HF acid, and would therefore undesirably increase the time taken to carry out the hydrogen trapping method.
The hydrogen trapping method then comprises bombarding the silicon material 1 with thermal energy hydrogen atoms. The hydrogen atoms are produced by a source which emits a beam of highly dissociated hydrogen molecules. The thermal energy hydrogen atoms and molecules are caused to impinge on the surface 5 of the silicon material 1. The hydrogen atoms then diffuse to the hydrogen trapping region 3.
Using thermal energy hydrogen atoms, to create a trapped hydrogen region, comprises a 'damage free' diffusion process, with none of the silicon atom ionisation or displacement processes caused by energetic hydrogen ions.
The hydrogen atoms diffuse to the hydrogen trapping region 3, and are trapped there by interaction with the boron ions. It has been found that the rate of diffusion of the hydrogen atoms to the hydrogen trapping region 3 is enhanced by heating the material 1 , to a temperature of less than approximately 500QC, preferably a temperature of approximately 400QC. It has been found that heating the material to a temperature of approximately 500BC and greater, causes the extent of hydrogen trapping to fall. It is thought that this is due to the trapped hydrogen gaining sufficient energy to be released from the boron, and diffuse out of the silicon material 1. Bombardment of the silicon material 1 with the thermal energy hydrogen atoms, causes the formation of bubbles on the surface 5 of the material 1. The frequency of occurrence and the height and diameter of the bubbles 6 are analysed, to obtain an indication of the amount of hydrogen trapped in the material 1.
It has been found that the amount of trapped hydrogen depends upon the implanted boron concentration, increasing with increasing boron concentration. Trapping the hydrogen in the hydrogen trapping region 3 of the silicon material 1 also causes formation of one or more platelets in the hydrogen trapping region 3 of the material 1. The extent of the platelet formation can also be analysed.

Claims

1. A method of trapping hydrogen in a material, comprising providing a hydrogen trapping region in the material, bombarding the material with thermal energy hydrogen atoms, and allowing at least some of the hydrogen atoms to interact with the hydrogen trapping region, effecting trapping of at least some of the hydrogen atoms in the hydrogen trapping region of the material.
2. A method according to claim 1 , in which providing a hydrogen trapping region in the material comprises embedding a hydrogen trapping substance into a region of the material.
3. A method according to claim 2, in which the hydrogen trapping substance is introduced via at least one surface of the material and at least a proportion thereof travels through a part of the material to embed in a region of the material to form the hydrogen trapping region in the material.
4. A method according to claim 3, in which the hydrogen trapping substance embeds in the region due to bonding with the structure of the material in the region.
5. A method according to any of claims 2 to 4, in which the hydrogen trapping substance is boron.
6. A method according to claim 4, in which bonding of at least a proportion of the hydrogen trapping substance with the material in the hydrogen trapping region causes a decrease in the trapping capability of the hydrogen trapping substance, and the method comprises treating the material to activate the trapping capability of the hydrogen trapping substance.
7. A method according to claim 6, in which treating the material comprises performing a rapid thermal annealing process on the material after introduction of the hydrogen trapping substance into the material.
8. A method according to claim 7, in which the rapid thermal annealing process comprises heating the material to approximately 9009C.
9. A method according to any preceding claim, in which the thermal energy hydrogen atoms are provided by a source which emits a highly dissociated beam of hydrogen molecules.
10. A method according to any preceding claim, in which allowing the hydrogen atoms to interact with the hydrogen trapping region comprises allowing the hydrogen atoms to diffuse to the hydrogen trapping region.
11. A method according to claim 10, in which allowing the hydrogen atoms to interact with the hydrogen trapping region comprises causing the hydrogen atoms to diffuse to the hydrogen trapping region by providing a hydrogen concentration gradient at the surface of the material.
12. A method according to any preceding claim, in which effecting trapping of at least some of the hydrogen atoms in the hydrogen trapping region of the material is enhanced by heating the material.
13. A method according to claim 12, in which the material is heated to a temperature of less than 500aC.
14. A method according to claim 13, in which the material is heated to a temperature of approximately 400sC.
15. A method according to any preceding claim, in which bombardment of the material with thermal energy hydrogen atoms, causes the formation of bubbles on at least one surface of the material.
16. A method according to claim 15, in which the bubbles have a frequency of occurrence which is used to obtain an indication of the amount of hydrogen trapped in the material.
17. A method according to 15 or claim 16, in which the bubbles have a size which is used to obtain an indication of the amount of hydrogen trapped in the material.
18. A method according to any preceding claim, in which trapping the hydrogen in the hydrogen trapping region of the material causes formation of one or more platelets in the region of the material.
19. A method according to any preceding claim, in which the material is at least substantially comprised of silicon.
PCT/GB2007/002765 2006-07-21 2007-07-20 Improvements in hydrogen trapping WO2008009961A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0614498.4 2006-07-21
GBGB0614498.4A GB0614498D0 (en) 2006-07-21 2006-07-21 Improvements in Hydrogen Trapping

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WO2008009961A2 true WO2008009961A2 (en) 2008-01-24
WO2008009961A3 WO2008009961A3 (en) 2008-07-31

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103079567A (en) * 2010-04-17 2013-05-01 拜尔健康护理有限责任公司 Synthetic metabolites of fluoro substituted omega-carboxyaryl diphenyl urea for the treatment and prevention diseases and conditions

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US20040171196A1 (en) * 2002-08-08 2004-09-02 Walitzki Hans J. Method and apparatus for transferring a thin layer of semiconductor material

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US20040171196A1 (en) * 2002-08-08 2004-09-02 Walitzki Hans J. Method and apparatus for transferring a thin layer of semiconductor material

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HÖCHBAUER T ET AL: "The influence of boron ion implantation on hydrogen blister formation in n-type silicon" JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 86, no. 8, 15 October 1999 (1999-10-15), pages 4176-4183, XP012048778 ISSN: 0021-8979 *
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103079567A (en) * 2010-04-17 2013-05-01 拜尔健康护理有限责任公司 Synthetic metabolites of fluoro substituted omega-carboxyaryl diphenyl urea for the treatment and prevention diseases and conditions

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GB0614498D0 (en) 2006-08-30

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