WO2005117075A1

WO2005117075A1 - Correcting method, predicting method, exposuring method, reflectance correcting method, reflectance measuring method, exposure apparatus, and device manufacturing method

Info

Publication number: WO2005117075A1
Application number: PCT/JP2005/009536
Authority: WO
Inventors: Kousuke Suzuki
Original assignee: Nikon Corporation
Priority date: 2004-05-26
Filing date: 2005-05-25
Publication date: 2005-12-08
Also published as: JP4582344B2; JPWO2005117075A1; TWI408504B; TW200609688A

Abstract

A second detection beam is received by a reference illuminance monitor (second sensor) without passing the second detection beam through a liquid-repellent film, and the output (Pref) of the reference illuminance monitor corresponding to the amount of light of the received beam is acquired (step 322). A first detection beam is received by a first sensor after passing the beam through a liquid-repellent film, and the output (Pi) of the first sensor corresponding to the amount of light of the received beam is acquired (step 306). From the output of the first sensor and the output of the reference illuminance monitor, correction information δ (or Ϝ) used to correct the output of the first sensor is acquired (steps 324 to 332). Correct energy information not influenced by the variation of the beam transmittance of the liquid-repellent film is collected.

Description

Specification

Calibration method, prediction method, exposure method, reflectance calibration method and reflectance measurement method, exposure apparatus, and device manufacturing method

Technical field

The present invention relates to a calibration method, a prediction method, an exposure method, a reflectance calibration method and a reflectance measurement method, an exposure apparatus, and a device manufacturing method, and more particularly, to a method of detecting a detection beam via a liquid repellent film. A calibration method for calibrating the output of a sensor to be received, a prediction method for predicting a change in beam transmittance of a liquid-repellent film, an exposure method using the calibration method, reflection of an object irradiated with an energy beam via an optical system and a liquid A reflectance calibration method for calibrating information related to the reflectance of a reflector used for reflectance measurement, a reflectance measurement method for measuring the reflectance of the object using the reflectance calibration method, and a method for measuring a reflectance from a beam source. The present invention relates to an exposure apparatus that exposes an object by irradiating an energy beam through an optical system and a liquid to form a pattern on the object, and a device manufacturing method using the exposure apparatus.

Background art

[0002] Conventionally, in a lithographic process for manufacturing electronic devices such as semiconductor devices (integrated circuits and the like) and liquid crystal display devices, a resist (photosensitive agent) is formed by projecting an image of a mask (or reticle) pattern through a projection optical system. ) Is transferred to each of a plurality of shot areas on a photosensitive object such as a wafer or a glass plate (hereinafter, referred to as a “wafer”) coated with a). A loose exposure stepper and a step-and-scan projection exposure apparatus (a so-called scanning stepper (also called a scanner)) are mainly used.

[0003] An exposure apparatus using a liquid immersion method has recently attracted attention. As an exposure apparatus using the liquid immersion method, there is known an exposure apparatus which performs exposure while a space between a lower surface of a projection optical system and a wafer surface is locally filled with a liquid such as water or an organic solvent (for example, And Patent Document 1 below). The exposure apparatus described in Patent Document 1 utilizes the fact that the wavelength of the exposure light in a liquid is lZn times that in air (n is the refractive index of the liquid, usually about 1.2 to 1.6). Resolution, and obtain the same resolution as that resolution regardless of the immersion method. To increase the depth of focus by a factor of n compared to the projection optics to be manufactured (assuming that such projection optics can be manufactured), ie to substantially increase the depth of focus by a factor of n compared to air. Can be.

[0004] In recent years, a stage (measurement stage) which can be driven in a two-dimensional plane independently of a wafer stage (substrate stage) and is provided with a measuring instrument used for measurement is provided. An exposure apparatus has also been proposed (for example, see Patent Documents 2 and 3).

[0005] However, when a measurement stage is employed in the above-described liquid immersion exposure apparatus, various measurements related to exposure are performed with the liquid immersion area formed on the measurement stage. In this case, a liquid-repellent film corresponding to the type of the liquid is formed on the surface of the member in contact with the liquid on the measurement stage, for example, in order to facilitate the collection of the liquid. The lyophobic film deteriorates with time due to irradiation with exposure light (light in the far ultraviolet region or vacuum ultraviolet region) used in immersion exposure. The light transmittance decreases due to the deterioration of the liquid repellent film, and the decrease in various measurement accuracy caused by the decrease in the light transmittance maintains the exposure accuracy required for recent exposure apparatuses for a long time. It has recently been found that this can be difficult.

[0006] Also, even when various measuring instruments are provided on the wafer stage without using the measurement stage, the degradation of the liquid-repellent film formed on the surface of the member in contact with the liquid occurs in the same manner as described above. As a result, the measurement accuracy of various measurements related to exposure may decrease, and it may be difficult to maintain the exposure accuracy over a long period of time.

[0007] Patent Document 1: International Publication No. 99Z49504 pamphlet

Patent Document 2: JP-A-11-135400

Patent Document 3: Japanese Patent Application Laid-Open No. 3-212812

Disclosure of the invention

Means for solving the problem

[0008] The present invention has been made under the above circumstances, and in a first aspect, the output of a first sensor that receives a first detection beam via a liquid-repellent film on the surface of a member is calibrated. A calibration method, comprising: receiving a second detection beam by a second sensor without passing through a liquid-repellent film, and obtaining an output of the second sensor corresponding to an energy amount of the received beam; The first detection beam is received by the first sensor via the liquid-repellent film, and the received beam is received. A second step of obtaining an output of the first sensor corresponding to an energy amount of the system; and calibrating an output of the first sensor based on an output of the first sensor and an output of the second sensor. And a third step of obtaining the calibration information.

According to this, in the first step, the second sensor receives the second detection beam without passing through the liquid-repellent film, and obtains the output of the second sensor corresponding to the energy amount of the received beam. I do. That is, the output of the second sensor that is not affected by the change in the beam transmittance of the liquid-repellent film is obtained. In the second step, the first detection beam is received by the first sensor via the liquid-repellent film, and the output of the first sensor corresponding to the energy amount of the received beam is obtained. In this case, the output of the first sensor is directly affected by the temporal change of the beam transmittance of the liquid-repellent film.

[0010] Then, in a third step, calibration information for calibrating the output of the first sensor is obtained based on the output of the first sensor and the output of the second sensor. Therefore, when the output of the first sensor is calibrated using this calibration information, the output of the first sensor after the calibration is not affected by the change in the beam transmittance of the liquid-repellent film.

According to a second aspect of the present invention, in consideration of an output of the first sensor calibrated using the calibration method of the present invention, an energy beam is irradiated onto an object via an optical system and a liquid. A first exposure method including a step of exposing the object.

[0012] According to this, the output of the first sensor calibrated using the calibration method of the present invention, that is, the output of the first sensor that is not affected by the change in the beam transmittance of the liquid-repellent film is considered. Then, since the object is exposed, it is possible to perform the liquid immersion exposure for the object with high accuracy over a long period without being affected by the temporal change in the beam transmittance of the liquid repellent film. .

According to a third aspect of the present invention, there is provided a method for predicting a change in beam transmittance of a liquid-repellent film formed on a surface of a member, the method comprising: This is a prediction method including a step of predicting a change in a beam transmittance of the liquid-repellent film based on information related to a beam irradiation history.

[0014] According to this, the liquid repellent film is irradiated with the liquid repellent film in order to predict the fluctuation of the beam transmittance of the liquid repellent film based on the information related to the irradiation history of the energy beam applied to the liquid repellent film. By acquiring information related to the energy beam irradiation history, the beam transmission of the lyophobic film can be easily performed. It is possible to predict a change in the rate.

According to a fourth aspect of the present invention, in order to measure the reflectance of an object irradiated with an energy beam via an optical system, the present invention is arranged on the beam exit side of the optical system, and has a surface A reflectance calibration method for calibrating reflectance data of a measurement reflector having a liquid-repellent film, wherein the reference reflector having a predetermined reflectance without a liquid-repellent film on the surface thereof is used for the optical system. It is arranged on the beam exit side, irradiates the energy beam to the reference reflector via the optical system, and receives a reflected beam from the reference reflector by a sensor via the optical system to acquire reference data. A first step of: arranging the measurement reflection plate on the beam emission side of the optical system, irradiating the measurement reflection plate with the energy beam via the optical system and the liquid, and In front of the reflected beam A second step of acquiring measurement data by receiving light with the sensor via the liquid and the optical system; and calibrating reflectance data of the measurement reflector based on the reference data and the measurement data. And a three-step reflectance calibration method.

[0016] According to this, in the first step, a reference reflector having no liquid-repellent film on its surface and having a predetermined reflectance is arranged on the beam emission side of the optical system, In addition to irradiating the reference reflector with an energy beam through the filter, the reflected beam from the reference reflector is received by a sensor via the optical system to acquire reference data. Further, in the second step, a measuring reflector is arranged on the beam emission side of the optical system, and the measuring reflector is irradiated with an energy beam through the optical system and the liquid. The reflected beam is received by the sensor via the liquid and the optical system, and measurement data is acquired. Here, assuming that the irradiation conditions of the energy beam are the same, the difference between the reference data and the measurement data is mainly due to the influence of the beam transmittance of the liquid-repellent film. Further, since no liquid-repellent film is present on the surface of the reference reflector, the reference data does not change as long as the irradiation condition of the energy beam is constant. Therefore, in the third step, the beam transmittance of the liquid-repellent film on the surface of the measurement reflector is calibrated by calibrating information related to the reflectance of the measurement reflector based on the reference data and the measurement data. If there is a fluctuation in the measurement, it becomes possible to acquire information related to the reflectance of the measuring reflector that compensates for the influence of the fluctuation.

[0017] In this case, the measurement reflector has a first reflection surface having a first reflectance and a second reflection surface. It can be composed of the same member having the second reflection surface having the emissivity. However, the first reflection surface having the first reflectance and the second reflection surface having the second reflectance may be formed on separate member surfaces.

According to a fifth aspect of the present invention, there is provided a reflectivity measuring method for measuring a reflectivity of an object which is disposed on a beam emission side of an optical system and is irradiated with an energy beam via the optical system and a liquid. A reference reflector having no liquid-repellent film on its surface and having a predetermined reflectance is disposed on the beam exit side of the optical system, and the reference reflector is provided on the reference reflector via the optical system. A first step of irradiating an energy beam and receiving a reflected beam of the reference reflector force by a sensor via the optical system to acquire reference data; and a lyophobic film formed on the surface thereof, A measurement reflection plate having a predetermined reflectance as a whole including: is arranged on the beam emission side of the optical system, and irradiates the energy beam to the measurement reflection plate via the optical system and liquid, Reflection from the measuring reflector A second step of receiving measurement by the sensor via the liquid and the optical system to obtain measurement data; and relating to the reflectance of the measurement reflection plate based on the reference data and the measurement data. A third step of calibrating information to be performed; arranging the object on a beam emission side of the optical system, irradiating the energy beam onto the object via the optical system and liquid, and A fourth step of receiving the reflected beam by the sensor via the liquid and the optical system; and information relating to the reflectance of the measurement reflector calibrated in the third step and a result of the fourth step. And a fifth step of obtaining the reflectance of the object based on the above.

[0019] According to this, each time the first, second, and third steps are performed, the reflection plate for measurement eliminates the effect of the beam transmittance fluctuation of the liquid-repellent film on the surface of the reflection plate for measurement. It is possible to obtain information related to the reflectance of the object. Then, in a fourth step, the object is arranged on the image plane side of the optical system, the energy beam is irradiated on the object via the optical system and the liquid, and the reflected light from the object is reflected on the liquid. And the information received by the sensor via the optical system, and in a fifth step, the information related to the reflectance of the reflective plate for measurement calibrated in the third step and the result received by the sensor in the fourth step. The reflectance of the object is determined by a predetermined method based on the It is possible to measure the reflectance of an object with high accuracy without being affected by the change in the rate.

[0020] According to a sixth aspect of the present invention, the reflectance measurement of the object disposed on the beam emission side of the optical system and irradiated with the energy beam through the optical system and the liquid according to the present invention. A second exposure method, comprising: measuring using a method; and exposing the object in consideration of the measured reflectance of the object.

[0021] According to this, the reflectivity of the object is measured with high accuracy without being affected by the fluctuation of the beam transmittance of the liquid-repellent film on the surface of the measuring reflector in the measuring step, and the measurement is performed in the exposing step. Since the object is exposed in consideration of the reflectance of the object, a highly accurate exposure is possible as a result.

[0022] The present invention is an exposure apparatus that irradiates an energy beam from a beam source through an optical system and a liquid, if necessary, to expose an object and form a pattern on the object. A first sensor for receiving a first detection beam via a liquid-repellent film on the surface of a member arranged on the beam exit side of the optical system; and a first sensor for receiving a second detection beam without passing through the liquid-repellent film. 2 sensors; acquiring an output of the second sensor corresponding to the amount of the second detection beam received, and acquiring an output of the first sensor corresponding to the amount of the first detection beam received; A calculation processing device that calculates calibration information for calibrating the output of the first sensor based on the output of the second sensor and the output of the first sensor acquired by the measurement processing device. Is a first exposure apparatus provided with;

According to this, in the measurement processing device, the second detection beam is received by the second sensor without passing through the liquid-repellent film, and the output of the second sensor corresponding to the amount of the received second detection beam is received. (Ie, the output of the second sensor that is not affected by the change in the beam transmittance of the liquid-repellent film), and receives the first detection beam by the first sensor via the liquid-repellent film and the member. And obtaining an output of the first sensor corresponding to the amount of the first detection beam. In this case, the output of the first sensor is directly affected by the temporal change of the beam transmittance of the liquid-repellent film.

[0024] Then, the arithmetic device calculates calibration information for calibrating the output of the first sensor based on the output of the second sensor and the output of the first sensor acquired by the measurement processing device. . Therefore, if the output of the first sensor is calibrated using this calibration information, the output of the first sensor after the calibration will not be affected by the change in the beam transmittance of the lyophobic film. The

According to an eighth aspect of the present invention, there is provided an exposure apparatus for exposing an object by irradiating an energy beam onto the object via an optical system and a liquid, and exposing the object to a beam. A sensor for receiving a detection beam through a film on the surface of a member disposed on the side of the sensor; and performing an exposure operation on the object based on an output of the sensor and information related to a change in beam transmittance of the film. And a control device for controlling.

[0026] According to this, the control device allows the output of the sensor that receives the detection beam via the film on the surface of the member disposed on the beam emission side of the optical system and the information related to the change in the beam transmittance of the film to be obtained. The exposure operation of the object is controlled based on the image, so that it is possible to expose the object with high accuracy for a long time without being affected by the change in the film beam transmittance.

[0027] In the lithographic process, an object is exposed using one of the first and second exposure methods of the present invention, and a pattern is formed on the object, so that the pattern is exposed on the object. It can be formed with high precision. Therefore, from a further aspect, the present invention provides a device manufacturing method including a lithographic process for exposing an object by any of the first and second exposure methods of the present invention to form a device pattern on the object. It can be said that it is a method. In the lithographic process, an object is exposed using one of the first and second exposure methods of the present invention, and a pattern is formed on the object to form the pattern on the object with high accuracy. can do. Accordingly, from a further aspect, the present invention provides a device including a lithographic process for exposing an object by one of the first and second exposure apparatuses of the present invention to form a device pattern on the object. It can also be said to be a manufacturing method.

Brief Description of Drawings

FIG. 1 is a view schematically showing a configuration of an exposure apparatus according to one embodiment.

FIG. 2 is a perspective view showing the stage device of FIG. 1.

FIG. 3 (A) is a perspective view showing a measurement stage.

FIG. 3 (B) is a perspective view showing a state in which a measurement stage force is also removed from a measurement stage force.

FIG. 4 is a plan view showing a measurement table main body 59. FIG. 5 is a longitudinal sectional view of the upper portion of a measurement table main body showing the vicinity of an illuminance monitor 122.

FIG. 6 is a block diagram showing a main configuration of a control system of the exposure apparatus of the embodiment.

FIG. 7 (A) is a plan view (part 1) for explaining the parallel processing operation of the embodiment.

FIG. 7 (B) is a plan view (part 2) for explaining the parallel processing operation of the embodiment.

FIG. 8 (A) is a plan view (part 3) for explaining the parallel processing operation of the embodiment;

FIG. 8 (B) is a plan view (part 4) for explaining the parallel processing operation of the embodiment;

FIG. 9 is a plan view (part 5) for explaining the parallel processing operation of the embodiment.

FIG. 10 is a flowchart corresponding to a processing algorithm of a CPU in a main control device, which is related to calibration of a measurement value (output) of an illuminance monitor.

FIG. 11 is a flowchart corresponding to a processing algorithm of a CPU in main controller 50 related to calibration of reflectance data.

FIG. 12 is a view for explaining a modified example of the illuminance monitor.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, an embodiment of the present invention will be described with reference to FIGS. 1 to 11.

FIG. 1 schematically shows a configuration of an exposure apparatus 10 according to an embodiment suitable for carrying out a calibration method, a prediction method, an exposure method, a reflectance calibration method, and a reflectance measurement method of the present invention. ing. The exposure apparatus 10 is a step-and-scan type scanning exposure apparatus using an excimer laser as a pulse light source as an exposure light source, that is, a so-called scanner.

The exposure apparatus 10 holds an illumination system including a light source 16 and an illumination optical system 12, and a reticle R as a mask illuminated by exposure illumination light IL from the illumination system, and holds the reticle R in a predetermined scanning direction (this direction). The reticle stage RST moves in the Y-axis direction, which is the horizontal direction in the plane of the paper in FIG. 1, and the projection optics PL that projects the exposure illumination light IL emitted from the reticle R onto the wafer W. A stage apparatus 100 having a unit PU, a wafer stage WST, and a measurement stage MST, and a control system thereof are provided. The wafer W is mounted on the Ueno stage W ST.

The light source 16 has, for example, a wavelength of 200ηπ! An ArF excimer laser (output wavelength: 193 nm), which is a pulse light source that emits light in the vacuum ultraviolet region of up to 170 nm, is used. [0033] The illumination optical system 12 includes a beam shaping optical system 18, an energy rough adjuster 20, a diffraction optical unit 17, an optical 'integrator (uniformizer or homogenizer) 22, and an illumination, which are arranged in a predetermined positional relationship. It includes a system aperture stop plate 24, a beam splitter 26, a first relay lens 28A, a second relay lens 28B, a fixed reticle blind 30A, a movable reticle blind 30B, a mirror M for bending an optical path, and a condenser lens 32. Note that the optical 'integrator 22 uses a fly-eye lens, an internal reflection type integrator, or a diffractive optical element. Call.

[0034] The beam shaping optical system 18 changes the cross-sectional shape of the laser beam LB, which is emitted by the light source 16 and enters through a light transmitting optical system (not shown), on the optical path of the laser beam LB. The laser beam LB is shaped so as to be efficiently incident on the provided fly-eye lens 22. The laser beam LB is formed of, for example, a cylinder lens and a beam expander (a deviation is not shown).

The energy rough adjuster 20 includes a rotating plate (revolver) 34 disposed on the optical path of the laser beam LB behind the beam shaping optical system 18. Around this rotating plate 34, a plurality of (for example, six) ND filters (two of which are shown in FIG. 1) having different transmittances (= 1 dimming rate) are arranged. I have. By rotating the rotating plate 34 with the drive motor 38, the transmittance for the incident laser beam LB can be switched from 100% in multiple stages. Drive motor 38 is controlled by main controller 50. The energy rough adjuster 20 is composed of a two-stage reporn having a plurality of ND filters, or a one-stage or a plurality of filter replacement members having a plurality of mesh filters having different transmittances. May be.

[0036] The diffractive optical unit 17 includes a plurality of, for example, two diffractive optical elements 17a, 17b, and a holder 17c for holding the diffractive optical elements 17a, 17b in a predetermined positional relationship. The holder 17c is rotated or slid by the main controller 50 via a drive mechanism (not shown). Thus, for example, according to the pattern of the reticle R to be transferred to the wafer W, that is, according to the illumination condition of the reticle R, one of the diffractive optical elements 17a and 17b is selectively placed on the optical path of the laser beam LB. Is set to [0037] The one diffractive optical element 17a is provided in a predetermined area on a pupil plane of the illumination optical system 12 (in the present embodiment, the exit focal plane of the fly-eye lens 22, or the rear focal plane of the second relay lens 28B). (For example, the incident laser light LB is diffracted so that the diffracted light is distributed in a circular area or an annular area centered on the optical axis of the illumination optical system 12, or a plurality of areas decentered on the optical axis). Things. The diffracted light (illumination light IL) generated from the diffractive optical element 17a passes through a lens system (not shown) on the optical path to an incident surface of a fly-eye lens 22 disposed behind the diffractive optical element 17a. The light is incident as a substantially parallel light flux. Further, the other diffractive optical element 17b is a region on the pupil plane of the illumination optical system 12 in which at least one of a shape, a size, and a position is different from a region where the diffracted light generated from the one diffractive optical element 17a is distributed. This diffracts the incident laser light LB so that the diffracted light is distributed to the light. Each of the diffractive optical elements 17a and 17b has a diffraction pattern (such as a diffraction grating), and at least one of the diffraction patterns may be a phase shift type diffraction pattern. Further, the diffractive optical unit 17 may include three or more diffractive optical elements.

[0038] The fly-eye lens 22 is disposed on the optical path of the laser beam LB behind the diffractive optical unit 17, and irradiates the reticle R with a uniform illuminance distribution. A surface light source having a large number of point light sources, ie, a secondary light source, is formed on the pupil plane of the optical system 12). The laser light that also emits the secondary light source power, ie, the above-described illumination light IL for exposure, is hereinafter referred to as “illumination light IL”.

An illumination system aperture stop plate 24, which also includes a disc-shaped member, is arranged on the exit-side focal plane of the fly-eye lens 22. The illumination system aperture stop plate 24 is provided at equal angular intervals, for example, an aperture stop (normal stop) composed of a normal circular aperture, and an aperture stop (consisting of a small circular aperture for reducing the σ value, which is a coherence factor). Small σ stop), annular aperture stop for annular illumination, and modified aperture stop with multiple apertures eccentrically arranged for the modified light source method (Fig. 1 shows only two types of aperture stop) Etc.) are arranged. The illumination system aperture stop plate 24 is rotated by a drive device 40 such as a motor controlled by a main controller 50, whereby one of the aperture stops is selectively set on the optical path of the illumination light IL.

Note that at least a part of a lens system (not shown) provided between one of the diffractive optical elements 17 a and 17 b disposed in the optical path of the illumination optical system 12 and the fly's eye lens 22 is a zoom lens. When used in combination with the diffractive optical unit 17 as a lens (a focal system), the light amount distribution (size and shape of the secondary light source) of the illumination light IL on the pupil plane of the illumination optical system 12, ie, the illumination of the reticle R It is also possible to suppress the light quantity loss when the condition is changed (improve the utilization efficiency of the illumination light). Further, a pair of prisms (or V-shaped or quadrangular pyramid-shaped prisms) each having a conical surface is incorporated in a lens system (not shown), and at least one of the pair of prisms is moved along the optical axis of the illumination optical system 12. By making the interval variable, it is also possible to similarly suppress the light amount loss when the illumination condition is changed. In addition, the above-mentioned illumination condition is achieved by the above-described diffractive optical unit 17 alone or a shaping optical system combining a diffractive optical unit 17 with a lens system (not shown) in which at least one of the zoom lens and a pair of prisms is incorporated. The aperture stop plate 24 may not necessarily be provided on the exit-side focal plane of the fly eye lens 22 as long as can be set arbitrarily. Furthermore, in the present embodiment, a fly-eye lens is used as the optical 'integrator 22. Therefore, a substantially parallel light beam is incident on the fly-eye lens by a lens system (not shown). When an integrator is used, the illumination light IL (diffraction light) is condensed by a lens system (not shown) and is incident on the internal reflection type integrator. At this time, it is preferable that the focal point of the illumination light IL by a lens system (not shown) be shifted from the incident surface force of the internal reflection type integrator. When the illumination conditions are changed, the range of the incident angle of the illumination light IL on the incident surface of the internal reflection type integrator is changed by the diffractive optical unit 17 (or the shaping optical system described above).

A beam splitter 26 having a small reflectance and a large transmittance is arranged on the optical path of the illumination light IL behind the illumination system aperture stop plate 24, and a fixed reticle blind (fixed field stop) is further provided on the optical path behind this. A relay optical system that also has a first relay lens 28A and a second relay lens 28B with a 30A and a movable reticle blind (movable field stop) 30B interposed is provided.

[0042] Fixed reticle blind 30A is arranged on a plane slightly defocused from a conjugate plane with respect to the pattern plane of reticle R, and defines illumination area IAR (rectangular illumination area elongated in the X-axis direction) on reticle R. A rectangular opening is formed. In addition, in the vicinity of the fixed reticle blind 30A, an opening whose position and width in the direction corresponding to the scanning direction are variable. A movable reticle blind 30B having an opening is disposed. By further limiting the illumination area IAR using the movable reticle blind 30B at the start and end of the scanning exposure, exposure of unnecessary portions is prevented.

On the optical path of the illumination light IL behind the second relay lens 28B forming the relay optical system, a bending mirror 1M that reflects the illumination light IL passing through the second relay lens 28B toward the reticle R is provided. The condenser lens 32 is disposed on the optical path of the illumination light IL behind the mirror M.

On the other hand, the illumination light IL reflected on one surface (surface) of the beam splitter 26 is received by the integrator sensor 46 including the photoelectric conversion element via the condenser lens 44, and the photoelectric conversion signal of the integrator sensor 46 is output. The power is supplied to the main controller 50 as an output DS (digit / pulse) via a hold circuit (not shown) (for example, a peak hold circuit) and an AZD transformation. As the integrator sensor 46, for example, a PIN-type photodiode or the like having sensitivity in the deep ultraviolet region or vacuum ultraviolet region and having a high response frequency for detecting pulsed light from the light source 16 can be used.

On the other surface (back surface) side of the beam splitter 26, a reflection amount monitor 47 including a photoelectric conversion element is arranged at a position conjugate with the pupil plane of the illumination optical system 12. In the present embodiment, the illumination light IL (reflected light) reflected by the wafer W returns to the beam splitter 26 via the liquid Lq, the projection optical system PL, the condenser lens 32, the mirror M, and the relay optical system, and is returned to the beam splitter 26. The light reflected by the is received by the reflection amount monitor 47, and the detection signal of the reflection amount monitor 47 is supplied to the main controller 50.

Therefore, during the exposure, the light amount (referred to as the first light amount) of the illumination light IL incident on the reticle R, the projection optical system PL and the like is monitored from the output signal of the integrator sensor 46, and the reflection amount monitor 47 Since the amount of reflected light (referred to as the second light amount) that is reflected by the wafer W and passes again through the liquid Lq, the projection optical system PL, the reticle R, and the like from the detection signal can be monitored, the first light amount and the second light amount can be monitored. Is added, the total amount of light passing through the projection optical system PL and the reticle R can be monitored more accurately. That is, based on the first light amount and the second light amount, the light amount of light incident on the projection optical system PL can be accurately monitored.

[0047] On reticle stage RST, a circuit pattern or the like is provided on its pattern surface (see FIG. 1). The reticle formed on the lower surface of the reticle is fixed by, for example, a vacuum suction system. The reticle stage RST can be finely driven in an XY plane perpendicular to the optical axis of the illumination optical system 12 (coincident with the optical axis AX of the projection optical system PL described later) by a reticle stage driving device 55 including, for example, a linear motor. In addition, it can be driven at a scanning speed specified in a predetermined scanning direction (here, the Y-axis direction, which is the horizontal direction in FIG. 1).

[0048] The position (including rotation about the Z axis) of the reticle stage RST in the stage movement plane is moved by a moving mirror 65 (actually, Y position) by a retinal laser interferometer (hereinafter referred to as a "reticle interferometer") 53. Through a Y-moving mirror having a reflecting surface orthogonal to the axial direction and an X-moving mirror having a reflecting surface orthogonal to the X-axis direction). Is done. The measured value of reticle interferometer 53 is sent to main controller 50, and based on the measured value of reticle interferometer 53, the main controller 50! The position (and speed) of the reticle stage RST is controlled by calculating the direction and the position in the 0 z direction (the rotation direction around the Z axis) and controlling the reticle stage driving device 55 based on the calculation result. Instead of moving mirror 65, the end surface of reticle stage RST may be mirror-finished to form a reflecting surface (corresponding to the reflecting surface of moving mirror 65).

[0049] Above the reticle R, a pair of reticle alignment marks on the reticle R via the projection optical system PL and a pair of reference marks on the measurement stage MST corresponding thereto (hereinafter, "first reference mark"). A pair of reticle alignment detection systems RAa and RAb consisting of a TTR (Through The Reticle) alignment system using light of the exposure wavelength for simultaneous observation of Te ru. As these reticle alignment detection systems RAa and RAb, those having the same configuration as those disclosed in, for example, JP-A-7-176468 and corresponding US Pat. No. 5,646,413 are used. Has been. To the extent permitted by the national laws of the designated States (or selected elected States) specified in this International Application, the disclosures of the above publications and corresponding US Patents are incorporated herein by reference.

[0050] The projection unit PU is arranged below the reticle stage RST in FIG. The projection unit PU was held in the lens barrel 80 in a predetermined positional relationship within the lens barrel 80. And a projection optical system PL including a plurality of optical elements. As the projection optical system PL, for example, a refraction optical system having a plurality of lenses (lens elements) having a common optical axis AX in the Z-axis direction is used. The projection optical system PL has a predetermined projection magnification (for example, 1Z4 times or 1Z5 times), for example, both-side telecentric. Therefore, when the illumination area IAR on the reticle R is illuminated by the illumination light IL from the illumination optical system 12, the illumination light IL that has passed through the reticle R passes through the projection optical system PL (projection unit PU). A reduced image (reduced image of a part of the circuit pattern) of the circuit pattern of the reticle R in the illuminated area IAR An area conjugate to the illuminated area IA on the wafer W coated with a resist (photosensitive agent) on the surface ( (Hereinafter, also referred to as “exposure area”).

Further, among the plurality of lenses of the force projection optical system PL, not shown, specific ones of the plurality of lenses are formed based on an instruction from the main controller 50, based on the imaging characteristic correction controller 181 (FIG. 6). ) To adjust the optical characteristics (including imaging characteristics) of the projection optical system PL, such as magnification, distortion, coma, and field curvature (including field tilt). .

[0052] In the exposure apparatus 10 of the present embodiment, since exposure is performed by applying a liquid immersion method as described later, the aperture on the reticle side increases as the numerical aperture NA substantially increases. . For this reason, it is difficult for the refractive optical system including only the lens to satisfy the Petzval condition, and the projection optical system tends to be large. In order to avoid such an increase in the size of the projection optical system, a catadioptric system (catadiy, optric system) including a mirror and a lens may be used.

Further, in the exposure apparatus 10 of the present embodiment, since exposure is performed by applying the liquid immersion method, the exposure device 10 is located closest to the image plane (wafer W) of the projection optical system PL, and has an optical element (hereinafter referred to as “tip lens”). In the vicinity of 91, a liquid supply nozzle 131A and a liquid recovery nozzle 131B of the liquid immersion device 132 are provided.

[0054] The liquid supply nozzle 131A is connected to the other end of a supply pipe (not shown) connected at one end to a liquid supply device 138 (not shown in Fig. 1, see Fig. 6). The nozzle 131B is connected to the other end of a collection pipe (not shown) whose one end is connected to a liquid recovery device 139 (not shown in FIG. 1, see FIG. 6). [0055] The liquid supply device 138 includes a liquid tank, a pressure pump, a temperature control device, and a valve for controlling start and stop of supply of the liquid to the supply pipe. As the valve, for example, it is desirable to use a flow rate control valve so that the flow rate can be adjusted as well as start and stop of liquid supply. The temperature control device adjusts the temperature of the liquid in the liquid tank to a temperature substantially equal to the temperature in a chamber (not shown) in which the exposure apparatus main body is housed. It is not necessary that the tank for supplying the liquid, the pressurizing pump, the temperature control device, the knob, and the like all be provided in the exposure apparatus 10. Equipment can be used instead.

[0056] The liquid recovery device 139 includes a liquid tank and a suction pump, a valve for controlling start and stop of liquid recovery performed through a recovery pipe, and the like. As the valve, it is preferable to use a flow control valve corresponding to the valve on the liquid supply device 138 described above. The tank, suction pump, valve, etc. for collecting the liquid need not be all equipped with the exposure apparatus 10, but at least a part of it should be replaced with equipment such as a factory where the exposure apparatus 10 is installed. You can also.

Here, as the liquid, ultrapure water (hereinafter, simply referred to as “water” unless otherwise required) through which ArF excimer laser light (light having a wavelength of 193 nm) passes is used. And Ultrapure water has the advantage that it can be easily obtained in large quantities at semiconductor manufacturing plants and the like, and that it has no adverse effect on the photoresist or optical lenses on the wafer. In addition, since ultrapure water has no adverse effect on the environment and has an extremely low impurity content, it can be expected to have an effect of cleaning the surface of the wafer and the surface of the tip lens 91.

[0058] The refractive index n of water with respect to ArF excimer laser light is approximately 1.44. In this water, the wavelength of the illumination light IL is shortened to 193 nm XlZn = about 134 nm.

[0059] The liquid supply device 138 and the liquid recovery device 139 each include a controller, and each controller is controlled by the main control device 50 (see Fig. 6). The controller of the liquid supply device 138 opens the valve connected to the supply pipe at a predetermined opening in accordance with an instruction from the main control device 50, and connects the tip lens 91, the head and the W through the liquid supply nozzle 131A. Supply water between. At this time, the controller of the liquid recovery device 139 opens a valve connected to the recovery pipe at a predetermined opening in accordance with an instruction from the main control device 50, The force between the tip lens 91 and the wafer W is also recovered through the liquid recovery nozzle 13 IB into the liquid recovery device 139 (liquid tank). At this time, main controller 50 determines that the amount of water supplied by liquid supply nozzle 131A between tip lens 91 and wafer W is always equal to the amount of water recovered through liquid recovery nozzle 131B. In this way, the controller 207 issues a command to the controller of the liquid supply device 138 and the controller of the liquid recovery device 139. Therefore, a certain amount of water Lq (see FIG. 1) is held between the tip lens 91 and the wafer W. In this case, the water Lq held between the tip lens 91 and the wafer W is constantly replaced.

As is clear from the above description, the liquid immersion device 132 of the present embodiment includes the liquid supply device 138, the liquid recovery device 139, the supply pipe, the recovery pipe, the liquid supply nozzle 131A, the liquid recovery nozzle 131B, and the like. When the wafer W is exposed, a liquid immersion area is formed on a part of the wafer W.

[0061] Even when the measurement stage MST is located below the projection unit PU, the space between the measurement table MTB and the tip lens 91 can be filled with water in the same manner as described above.

[0062] In the above description, in order to simplify the description, it is assumed that one liquid supply nozzle and one liquid recovery nozzle are provided, and the present invention is not limited to this. As disclosed in the 99Z49504 pamphlet, a configuration having many nozzles may be employed. In short, as long as the liquid can be supplied between the optical member (tip lens) 91 at the lowermost end of the projection optical system PL and the wafer W, any configuration may be used. For example, a liquid immersion mechanism disclosed in International Publication No. 2004Z053955 pamphlet and a liquid immersion mechanism disclosed in European Patent Publication No. 1420298 can also be applied to the exposure apparatus of the present embodiment.

[0063] The stage device 100 includes a frame caster FC, a base plate 60 provided on the frame caster FC, a wafer stage WST and a measurement stage MST disposed above the upper surface of the base plate 60, An interferometer system 118 (see FIG. 6) described later for measuring the positions of these stages WST and MST, and a stage driving device 124 (see FIG. 6) for driving the stages WST and MST are provided.

The frame caster FC has a Y-axis direction as a longitudinal direction near one end in the X-axis direction and an end near the other side, as shown in FIG. Overhang A substantially flat member having the convex portions FCa and FCb formed integrally is also provided.

[0065] The base plate 60 serves as a plate-like member, also referred to as a platen, and is arranged on a region of the frame caster FC sandwiched between the aforementioned convex portions FCa and FCb. The upper surface of the base plate 60 has a very high degree of flatness and serves as a guide surface when the wafer stage WST and the measurement stage MST are moved.

As shown in FIG. 2, the wafer stage WST includes a wafer stage main body 78 disposed above the base board 60 and a Ζ-tilt drive mechanism (not shown) on the wafer stage main body 78. It has a mounted wafer table WTB. The tilt drive mechanism actually includes three actuators (for example, a voice coil motor or an electromagnet) that support the wafer table WTB at three points on the wafer stage body 78, and the wafer table WTB is Micro-drive in three degrees of freedom: direction, 0 0 direction (rotation direction around X axis), and 0 y direction (rotation direction around Υ axis).

The wafer stage main body 78 is formed of a hollow member having a rectangular cross section and extending in the X-axis direction. On the lower surface of the wafer stage main body 78, a plurality of, for example, four unshown gas static pressure bearings, for example, air bearings are provided, and these air bearings move the wafer stage WST several μm above the guide surface. It is supported without contact through a clearance of about m.

As shown in FIG. 2, a Y-axis stator 86 extending in the Y-axis direction is arranged above the protrusion FCa of the frame caster FC. Similarly, a Y-axis stator 87 extending in the Y-axis direction is arranged above the convex portion FCb of the frame caster FC. These Y-axis stators 86 and 87 are supported by a static gas bearing (not shown) provided on each lower surface, for example, an air bearing, with a predetermined clearance to the upper surfaces of the convex portions FCa and FCb. ing. In the present embodiment, the Y-axis stators 86 and 87 are constituted by magnetic pole units having a plurality of permanent magnets arranged at predetermined intervals along the Y-axis direction.

[0069] Inside the wafer stage main body 78, there is provided a mover 90 comprising a magnetic pole unit having a U-shaped cross section and having a plurality of permanent magnets arranged at predetermined intervals along the X-axis direction. [0070] An X-axis stator 79 extending in the X-axis direction is inserted into the internal space of the mover 90. The stator 79 for the X-axis is constituted by an armature unit having a plurality of armature coils arranged at predetermined intervals along the X-axis direction. In this case, a moving magnet type X-axis linear motor that drives the wafer stage WST in the X-axis direction is constituted by the mover 90 composed of a magnetic pole unit and the X-axis stator 79 composed of an armature unit. ing. Hereinafter, the X-axis linear motor will be referred to as the X-axis linear motor 79 using the same reference numerals as the stator (stator for the X-axis) 79 as appropriate. Note that a moving coil type linear motor may be used instead of the moving magnet type linear motor as the X-axis linear motor.

An armature unit incorporating a plurality of armature coils arranged at predetermined intervals along the Y-axis direction is provided at one end of the X-axis stator 79 on one side and the other side in the longitudinal direction, for example. The movers 82 and 83 consist of a fixed force. Each of these movers 82 and 83 is inserted into the above-mentioned stator 86 and 87 for the Y-axis, respectively. That is, in the present embodiment, the movers 82 and 83 formed of armature units and the Y-axis stators 86 and 87 formed of magnetic pole units into which the movers 82 and 83 are inserted, respectively. And two moving coil type Y-axis linear motors. In the following, each of the two Y-axis linear motors will be referred to as the Y-axis linear motor 82 and the Y-axis linear motor 83 as appropriate, using the same reference numerals as the respective movers 82 and 83. Note that moving magnet type linear motors may be used as the Y-axis linear motors 82 and 83.

That is, the wafer stage WST is driven in the X-axis direction by the X-axis linear motor 79, and is driven in the Y-axis direction integrally with the X-axis linear motor 79 by the pair of Y-axis linear motors 82 and 83. You. The wafer stage WST is also driven to rotate in the z-direction by slightly varying the driving force in the Y-axis direction generated by the Y-axis linear motors 82 and 83.

As shown in FIG. 2, a wafer holder 70 for holding a wafer W is provided on the wafer table WTB. The wafer holder 70 has a plate-shaped main body and a plate fixed to the upper surface of the main body. A circular opening having a diameter of about 0.1 to 2 mm larger than the diameter of the wafer W is formed at the center of the plate, and a small circular opening is formed near the circular opening. The top of the body inside the large circular opening of this plate The wafer W is vacuum-adsorbed to the wafer holder 70 in a state where the wafer W is supported by the pins. In this case, when the wafer W is vacuum-sucked to the wafer holder 70, the height of the surface of the wafer W and the height of the surface of the plate are substantially the same. The reference mark plate FM1 is fitted into the small circular opening of the plate so that its surface is almost the same height as the surface of the plate. On the surface of the fiducial mark plate FM1, for example, a pair of first fiducial marks for reticle alignment (the pair of first fiducial marks are fiducial marks RM to RM described later (see FIG. 4)).

11 32) are formed. The fiducial mark plate FM1 has a glass member (for example, a very low expansion glass ceramic, for example, Thalia Serum (registered trademark)) and a chromium layer formed on the surface thereof, and a chromium layer formed on the chromium layer by patterning. An opening pattern is formed as a first fiducial mark. The entire surface of the plate including the fiducial mark plate FM1 is coated with a liquid-repellent material (water-repellent material) such as a fluorine resin material or an acrylic resin material to provide a water-repellent film as a liquid-repellent film. A film is formed.

As shown in FIG. 2, an X movable mirror 67X having a reflecting surface orthogonal to the X axis at one end (one X side end) in the X axis direction is provided on the upper surface of the wafer table WTB in the Y axis direction. One end (+ Y side end) in the Y-axis direction is provided, and a Y moving mirror 67Y having a reflecting surface orthogonal to the Y-axis is extended in the X-axis direction. As shown in FIG. 2, the interferometer beams from the X-axis interferometer 96 and the Y-axis interferometer 68 of the interferometer system 118 (see FIG. (Measurement beams) are projected, and the interferometers 96 and 68 receive the respective reflected light, so that the reference position of each reflecting surface (generally, the side of the projection unit PU or the ALGAX alignment system (Fig. 6) , 07 (A), etc.), a fixed mirror is placed on the side, and this is used as the reference plane.) The displacement in the force measurement direction is measured.

The interferometer system 118 includes three interferometers, the X-axis interferometer 96, the Y-axis interferometer 68, and the X-axis interferometer 66 shown in FIG.

The Y-axis interferometer 68 has a length measuring axis parallel to the Y axis connecting the projection center (optical axis AX) of the projection optical system PL and the detection center of the alignment system A LG, The total 96 has a length measurement axis that vertically intersects the length measurement axis of the Y-axis interferometer 68 at the projection center of the projection optical system PL (see FIG. 7 (A) and the like). The Y-axis interferometer 68 is a multi-axis interferometer having at least three optical axes, and each optical axis can independently measure the displacement of the reflecting surface. The X-axis interferometer 96 is a multi-axis interferometer having at least two optical axes, and each optical axis can independently measure the displacement of the reflecting surface.

In the present embodiment, the output value (measured value) of each interferometer of the interferometer system 118 is supplied to the main controller 50 as shown in FIG. Therefore, main controller 50 determines the position of wafer table WTB in the Υ-axis direction (Υ-position), the amount of rotation around X-axis (the amount of pitching), and the amount of rotation around Ζ-axis based on the output value from Υ-axis interferometer 68. Measure the rotation amount (jowing amount). Further, main controller 50 measures the position of wafer table W in the X-axis direction (X position) and the amount of rotation around Υ axis (rolling amount) based on the output value from X-axis interferometer 96.

[0079] As described above, movable mirrors 67 # and 67 # are actually provided on wafer table WTB, but these are typically shown as movable mirror 67 in FIG. Note that, for example, the end surface of the wafer table WTB may be mirror-finished to form a reflective surface (corresponding to the reflective surfaces of the movable mirrors 67 and 67 described above).

As shown in FIG. 2, the measurement stage MST is composed of a combination of a plurality of members including a stage 81 having the X-axis direction as a longitudinal direction, and the lowermost surface thereof (the base plate 60). A plurality of hydrostatic bearings provided on the lower surface of the closest member), for example, an air bearing is used to lift the upper surface (guide surface) of the base board 60 through a taller of several μm over the upper surface (guide surface). It is supported by contact.

As can be seen from the perspective view of FIG. 3 (A), the measuring stage MST has a rectangular plate-shaped measuring stage body 81c elongated in the X-axis direction and an X-axis direction on the upper surface of the measuring stage body 81c. A Y stage 81 having a pair of protrusions 81a and 8 lb fixed to one side and the other side, a leveling table 52 disposed above the upper surface of the measurement stage body 81c, A measurement table MTB provided on the ring table 52 is provided.

An armature having a plurality of armature coils arranged at predetermined intervals along the Y-axis direction is provided on one end surface of the measurement stage body 81 c of the Y stage 81 on one side and the other side in the X-axis direction. The movers 84 and 85 made of units are fixed. Each of these movers 84 and 85 is inserted into the above-mentioned Y-axis stators 86 and 87, respectively. That is, in the present embodiment, the movers 84 and 85 each composed of an armature unit, , 85 and the Y-axis stators 86, 87, each of which is a magnetic pole unit inserted therein, constitute two moving coil type 型 -axis linear motors. In the following, each of the above two Υ-axis linear motors will be referred to as Υ-axis linear motor 84 and Υ-axis linear motor 85 as appropriate, using the same reference numerals as the movers 84 and 85. In the present embodiment, the total force of the measurement stage MST is driven in the positive and negative axial directions by these positive and negative linear motors 84 and 85. Note that the Υ-axis linear motors 84, 85 may be moving magnet type linear motors.

[0083] The plurality of static gas pressure bearings described above are provided on the bottom surface of the measurement stage main body 81c. The pair of protruding portions 81a and 81b are fixed to each other near one end of the upper surface of the measurement stage body 81c in the X-axis direction and near the -Y-side end on the other side. Between the protruding portions 81a and 81b, stators 61 and 63 extending in the X-axis direction are provided at predetermined intervals in the Z-axis direction (up and down).

A movable element of the X voice coil motor 54a is provided on the + X side end surface of the leveling table 52, and the stator of the X voice coil motor 54a is fixed to the upper surface of the measurement stage main body 81c. Have been. On the + Y side end surface of the leveling table 52, movers for Y voice coil motors 54b and 54c are provided, respectively. The stators of these Y voice coil motors 54b and 54c are connected to the upper surface of the measurement stage body 81c. Fixed to. The X voice coil motor 54a is composed of, for example, a mover composed of a magnetic pole unit and a stator composed of an armature unit, and generates a driving force in the X-axis direction by electromagnetic interaction between them. The Y voice coil motors 54b and 54c are similarly configured to generate a driving force in the Y-axis direction. That is, the leveling table 52 is driven in the X-axis direction with respect to the Y stage 81 by the X voice coil motor 54a, and is moved in the Y-axis direction with respect to the Y stage 81 by the Y voice coil motors 54b and 54c. Is driven. Further, by making the driving forces generated by the voice coil motors 54b and 54c different, the leveling table 52 can be driven relative to the Y stage 81 in the rotation direction around the Z axis (Θz direction).

That is, the leveling table 52 is controlled in six directions of freedom (X, Υ) by the X voice coil motor 54a, the Y voice coil motors 54b, 54c, and the Z voice coil motor (not shown) arranged inside. , Z, θχ, θγ, 0ζ) in a non-contact manner. [0086] Returning to Fig. 3 (A), the measurement table MTB has a measurement table main body 59 and a longitudinal direction in the X-axis direction, which is fixed vertically on the -Y side surface of the measurement table main body 59. Movable elements 62 and 64 having a substantially U-shaped cross section are provided.

The mover 62 includes a mover yoke having a substantially U-shaped YZ section, and N-pole permanent magnets arranged at predetermined intervals and alternately on the inner surface (upper and lower surfaces) of the mover yoke along the X-axis direction. A permanent magnet group including a plurality of pairs of magnets and S pole permanent magnets is provided, and is engaged with the stator 61 described above. In the inner space of the mover yoke of the mover 62, an alternating magnetic field is formed along the X-axis direction. The stator 61 is formed of, for example, an armature unit including a plurality of armature coils arranged at predetermined intervals along the X-axis direction. That is, a moving magnet type X-axis linear motor LX that drives the measurement table MTB in the X-axis direction is constituted by the stator 61 and the mover 62!

The mover 64 includes a mover yoke having a substantially U-shaped YZ section, and an N-pole permanent magnet and an S-pole permanent magnet provided on the inner surface (upper and lower surfaces) of the mover yoke. , And are engaged with the stator 63 described above. A magnetic field in the + Z direction or the −Z direction is formed in the inner space of the mover yoke of the mover 64. The stator 63 is provided therein with an armature coil arranged so that current flows only in the X-axis direction in a magnetic field formed by the N-pole magnet and the S-pole magnet. That is, a moving magnet type Y voice coil motor VY that drives the measurement table MTB in the Y-axis direction is constituted by the mover 64 and the stator 63.

As is clear from the above description, in the present embodiment, the Y-axis linear motors 82 to 85 and the X-axis linear motor 79, a not-shown Ζ-tilt driving mechanism for driving the wafer table WTB, measurement The above-described motors (54a to 54c, LX, VY, and a Z voice coil motor (not shown)) on the stage MST constitute at least a part of the stage driving device 124 shown in FIG. Various driving mechanism forces of the stage driving device 124 are controlled by the main control device 50 shown in FIG.

As shown in FIG. 3 (B), the measurement table main body 59 of the measurement table MTB is composed of a lower half first portion 59a and an upper half second portion 59b. ing. The first portion 59a is constituted by a rectangular parallelepiped member, and has a plurality of air bearings on its bottom surface. Is fixed. The second portion 59b has a rectangular parallelepiped shape having a larger width in the Y-axis direction and the same length in the X-axis direction as the first portion 59a, and has a Y-side end surface, a + X-side end surface, and an —X-side end surface. Are fixed on the first portion 59a so as to be flush with the first portion 59a. The second portion 59b actually includes a hollow rectangular parallelepiped housing 120 (see FIG. 5) having an open upper surface, and a plate 101 having a predetermined thickness for closing the upper surface of the housing 120. The plate 101 is formed of a liquid-repellent material such as polytetrafluoroethylene (Teflon (registered trademark)).

As shown in FIG. 4, which is a plan view of the measurement table main body 59, the plate 101 includes a first region on the + X side of the boundary line BL and a second region on the X side of the boundary line BL. It has two areas. The first area is an area where various measurement members to be irradiated with illumination light IL via water Lq as a liquid are arranged, and the second area is various measurement where illumination light IL is irradiated without passing through liquid. This is the area where the members are arranged. Therefore, a partition (wall or groove) may be provided along the boundary line BL so that the water Lq on the first area does not flow into the second area! /.

[0092] The first region of the plate 101 has a rectangular opening 101a having a longitudinal direction in the Y-axis direction, and has substantially the same dimensions in the X-axis direction as the opening 101a, with the X-axis direction as the longitudinal direction. An opening 101b having a rectangular shape, an opening 101c having a width in the Y-axis direction almost twice as large as the opening 101b and having the same length in the X-axis direction, and three circular openings lOld, lOle, and lOlf are formed. I have.

[0093] In the second region of the plate 101, an opening 101g having substantially the same shape as the above-described opening 101b and an opening 101h having substantially the same shape as the above-described opening 101c are formed.

[0094] An illuminance monitor (irradiation amount monitor) 122, which is an illuminance measuring device, is arranged inside the housing 120 below the opening 101b of the plate 101. As shown in FIG. 5, the illuminance monitor 122 includes an optical member 126 made of synthetic quartz or fluorite and also having a glass force, and a first sensor 128 fixed to the lower surface of the optical member 126 with almost no gap. It has. The first sensor 128 has a light receiving surface having a predetermined area enough to receive almost all of the illumination light IL applied to the above-described exposure area IA (see FIG. 4) shown in FIG. A plurality of silicon photodiodes (or photomultipliers) that are sensitive in the wavelength region (for example, a wavelength of about 300ηπ to about 100 nm) and have a high response frequency to detect the illumination light IL. Includes light-receiving elements such as tiplier tubes.

[0095] As shown in FIG. 5, the optical member 126 has a shape facing the inner surface and the lower surface of the opening 101b portion of the plate 101 with a predetermined gap therebetween. In this case, the width of the gap B between the opening 101b and the upper side surface of the optical member 126 is set to, for example, about 0.3 mm.

[0096] The optical member 126 also has an upward force associated with the support member 130 provided on the upper surface of the bottom wall of the housing 120. In other words, the support member 130 has a frame shape with a predetermined width surrounding the light receiving element 128 when viewed from above (when viewed from above), and the outer edge of the lower surface of the optical member 126 is attached to the upper end of the support member 130. Is formed. On the optical member 126, a dimming film 129 made of a metal thin film of chromium or the like for dimming the illumination light IL is formed on the entire upper surface thereof. Furthermore, a liquid-repellent material (water-repellent material) such as a fluorine resin or an acrylic resin is coated on the light-reducing film, thereby forming a water-repellent HWRF as a liquid-repellent film. I have. In the present embodiment, the upper surface of the water-repellent HWRF and the upper surface of the plate 101 are set to be substantially the same (the same surface).

On the other hand, on the lower surface of the optical member 126, a light-shielding film 127 made of a metal film such as chromium is formed in a region other than the central rectangular region. As shown in FIG. 5, this light-shielding film 127 cuts (shields) stray light (see a thick solid line arrow in FIG. 5) incident on the optical member 126 via the gap B portion.

The illuminance monitor 122 of the present embodiment is similar to the illuminance monitor (irradiation amount monitor) disclosed in, for example, Japanese Patent Application Laid-Open No. 6-291016 and the corresponding US Pat. No. 5,721,608. And the illuminance of the illumination light IL is measured via the water Lq on the image plane of the projection optical system PL. The detection signal (photoelectric conversion signal) of the first sensor 128 of the illuminance monitor 122 is supplied to the main controller 50 via a not-shown hold circuit (for example, a peak hold circuit) and an analog Z-digital (AZD) converter. I have. To the extent permitted by the national laws of the designated country (or selected elected country) specified in this international application, the disclosures in the above published gazettes and corresponding US patents are incorporated herein by reference.

[0099] At least a region on the side surface of the optical member 126 facing the inner wall surface of the opening 101b of the plate 101, and the inner wall surface of the opening 101b of the plate 101 facing the optical member 126 are: It is liquid repellent (water repellent) after liquid repellent treatment (water repellent treatment). The liquid-repellent treatment can be performed by applying a liquid-repellent material such as the above-mentioned fluorine resin material or acrylic resin material.

[0100] A discharge hole 120a is formed in the bottom wall of the housing 120 near the support member 130, and the discharge hole 120a is connected to a collection unit (not shown) via a pipe (not shown). It is connected. The recovery unit includes a vacuum system and a gas-liquid separator including a tank capable of storing water Lq. Despite the above-described liquid-repellent treatment, the water Lq that has flowed into the housing 120 through the gap B is recovered by the recovery unit through the discharge hole 120a.

[0101] The reference illuminance monitor 122 configured in the same manner as the illuminance monitor 122 described above, except that a water-repellent film is not formed above the dimming film on the upper surface of the optical member 126 at the opening lOlg of the plate 101. 'Is located. The reference illuminance monitor 122 'measures the illuminance of the illumination light IL on the image plane of the projection optical system PL without passing through water. The reference illuminance monitor 122 'has a sensor similar to the first sensor 128 of the illuminance monitor 122, and a detection circuit (photoelectric conversion signal) of the reference illuminance monitor 122, a hold circuit (not shown) (for example, a peak hold circuit) , And analog Z are supplied to the main controller 50 via digital (A / D) conversion.

[0102] Inside the opening 101a of the plate 101, a fiducial mark plate FM2 having a rectangular shape in a plan view is arranged. In this case, a gap A of, for example, about 0.3 mm is formed between the reference mark plate FM2 and the plate 101 around the reference mark plate FM2. Reference mark Plate The top surface of FM2 is set at almost the same height (the same level) as the plate 101 surface. On the surface of the fiducial mark plate FM2, three pairs of first fiducial marks RM to RM, which can be simultaneously measured one by one by the above-mentioned reticle alignment detection systems RAa and RAb, are described later.

11 32 The three second fiducial marks WM to WM detected by the alignment ALG

1 3 It is formed in a positional relationship. Each of these reference marks is provided on a chromium layer formed almost entirely on the surface of a member (for example, an ultra-low expansion glass ceramic, for example, Talia Serum (registered trademark)) constituting a reference mark plate FM2. It is formed as an opening pattern formed by the pattern Jung in a positional relationship. Each reference mark may be formed by a pattern (remaining pattern) of aluminum or the like.

[0103] In the present embodiment, for example, Japanese Patent Application Laid-Open No. Hei 5-21314 and the corresponding US Patent No. 5, 243, 195, etc., the first fiducial marks RM, RM (j

jl] 2

= 1 to 3) can be measured simultaneously by the pair of reticle alignment detection systems RAa and RAb described above, and the second reference mark WM is simultaneously measured with the first reference marks RM and RM of the parentheses.

] 1] 2 The arrangement of the above fiducial marks is determined so that j can be measured by the alignment ALG. The upper surface of the reference mark plate FM2 is almost flat, and may be used as a reference surface of a multipoint focal position detection system described later. On the upper surface of the fiducial mark plate FM2, although not shown, a water-repellent film made of a liquid-repellent material such as the above-mentioned fluorine resin or acrylic resin is formed on the chromium layer. Is formed.

[0104] At least the area of the side surface of the reference mark plate FM2 facing the inner wall surface of the opening 101a of the plate 101, and the inner wall surface of the opening 101a of the plate 101 facing the reference mark plate FM2 are subjected to the same lyophobic treatment as described above. Has been done. Also, on the bottom wall of the housing 120, a discharge hole similar to the above-described discharge hole 120a is formed near the fiducial mark plate FM2, and this discharge hole is connected to the vacuum system of the collecting section described above! Puru.

[0105] Inside the opening 101c of the plate 101, a measurement reflecting plate 102 having a rectangular shape in a plan view is arranged with its surface being substantially flush with the plate 101.

A gap C 1S having a width of, for example, about 0.3 mm is formed between the reflection plate 102 for measurement and the plate 101 around the reflection plate 102 for measurement. At least the area of the side surface of the measuring reflector 102 facing the inner wall surface of the opening 101c of the plate 101 and the inner wall surface of the opening 101c facing the measuring reflector 102 of the plate 101 are subjected to the same lyophobic treatment as described above. It has been done. Further, on the bottom wall of the housing 120, a discharge hole similar to the above-described discharge hole 120a is formed in the vicinity of the reflection plate 102 for measurement, and this discharge hole is connected to the vacuum system of the above-mentioned collection unit. You.

[0107] The upper surface of the measurement reflector 102 is divided into two regions in the Y-axis direction, and one of the regions has a high reflectivity in which the designed reflectivity (initial reflectivity) is the first reflectivity R. Surface area 102H

H

The other area is a low-reflection surface area 102L in which the designed reflectance (initial reflectance) is the second reflectance R (<first reflectance R). High reflection surface area 102H, low reflection surface

H

Each of the areas 102L is an area wider than the exposure area IA described above. All over the high-reflection surface area 102H and the low-reflection surface area 102L of the measuring reflector 102. A water-repellent film made of a liquid-repellent material such as a fluorine resin material or an acrylic resin material is formed.

[0108] Inside the above-mentioned opening lOlh of the plate 101, a reference reflection plate 202 whose surface or the like is not subjected to a liquid repellent treatment (no liquid repellent film is formed) is substantially flush with the upper surface of the plate 101 ( It is placed in a state where it is flush. It is assumed that the reflectance of the reference reflector 202 is the third reflectance.

[0109] Inside the opening 101d of the plate 101, an uneven illuminance measuring device 104 having a circular pattern plate 103 in a plan view is arranged. For example, a gap D having a width of about 0.3 mm is formed between the pattern plate 103 and the plate 101 around the pattern plate 103.

[0110] The uneven illuminance measuring device 104 is a sensor that also has the above-mentioned pattern plate 103 and a light receiving element (not shown) such as a silicon "photo" diode or a photomultiplier tube arranged below the pattern plate. And The pattern plate 103 is made of quartz glass or the like similarly to the optical member 126 described above, and a light-shielding film such as chromium is formed on the surface thereof, and a pinhole 103a is formed in the center of the light-shielding film as a light transmitting portion. . Then, a water-repellent film made of a liquid-repellent material such as the above-mentioned fluorine resin material or acrylic resin material is formed on the light-shielding film.

[0111] The illuminance unevenness measuring instrument 104 has the same configuration as the illuminance unevenness measuring instrument disclosed in Japanese Patent Application Laid-Open No. 57-117238 and the corresponding US Patent No. 4,465,368. Therefore, the illuminance unevenness of the illumination light IL is measured via the water Lq on the image plane of the projection optical system PL. The detection signal (photoelectric conversion signal) of the sensor constituting the uneven illuminance measurement device is mainly transmitted through a hold circuit (not shown) (for example, a peak hold circuit) and analog Z digital (A / D) conversion. It is supplied to the controller 50. To the extent permitted by the national laws of the designated States (or selected elected States) specified in this International Application, the disclosures in the above-mentioned publications and corresponding US patents are incorporated herein by reference.

[0112] Inside the opening 101e of the plate 101, a slit plate 105 having a circular shape in a plan view is disposed so that the surface thereof is substantially flush with the surface of the plate 101. A gap E having a width of, for example, about 0.3 mm is formed between the slit plate 105 and the plate 101 around the slit plate 105. This slit plate 105 is similar to the pattern plate 103 described above, It has an English glass and a light-shielding film such as chromium formed on the surface of the quartz glass, and a slit pattern extending in the X-axis direction and the Y-axis direction is formed as a light-transmitting portion at a predetermined portion of the light-shielding film. . The slit plate 105 constitutes a part of an aerial image measuring device for measuring the light intensity of the aerial image (projected image) of the pattern projected by the projection optical system PL. In the present embodiment, the illumination light IL applied to the plate 101 via the projection optical system PL and the water Lq is provided inside the measurement table main body 59 (housing 120) below the slit plate 105 in the slit pattern. There is provided a light receiving system for receiving light through the

An aerial image measuring device similar to the aerial image measuring device disclosed in Japanese Patent Application Publication No. 002-14005 and the corresponding US Patent Application Publication No. 2002Z0041377 is provided. To the extent permitted by the national laws of the designated country (or selected elected country) designated in this international application, the disclosures in the above published gazettes and corresponding U.S. patent application publications are partially incorporated herein by reference. And

[0113] Inside the opening 101f of the plate 101, a circular wavefront aberration-measuring pattern plate 107 having a circular shape in a plan view is arranged so that its surface is substantially flush with the surface of the plate 101. I have. The wavefront aberration measurement pattern plate 107 has quartz glass and a light-shielding film such as chromium formed on the surface of the quartz glass, and has a circular shape at the center of the light-shielding film, similarly to the pattern plate 103 described above. Openings are formed. A light receiving system including, for example, a microlens array is provided inside the measurement table main body 59 (housing 120) below the wavefront aberration measurement pattern plate 107, whereby, for example, WO99Z60361 The wavefront aberration measuring instrument disclosed in the fret and the corresponding European Patent No. 1,079,223 is constituted. To the extent permitted by national laws of the designated country (or selected elected country) designated in this international application, a part of the description of this specification is incorporated by reference to the disclosure in the above-mentioned international pamphlet and the corresponding European patent specification. And

The above-mentioned pattern plate 103, slit plate 105, and wavefront aberration measurement pattern plate 107 have at least the side surfaces thereof at least facing the opening 101d, the opening 101e, the inner wall surface of the opening 101f, and the plate 101, respectively. The inner wall surface of the opening 10Id facing the pattern plate 103, the inner wall surface of the opening 101e facing the slit plate 105, and the inner wall surface of the opening 101f facing the wavefront aberration measuring pattern plate 107 are respectively the same repellent as described above. Liquid treatment Has been made. On the bottom wall of the housing 120, the same discharge holes as the above-described discharge holes 120a are formed in the vicinity of the pattern plate 103, the slit plate 105, and the wavefront aberration measurement pattern plate 107, respectively. Is connected to the vacuum system of the collecting section described above.

In the present embodiment, the light receiving elements (sensors) constituting the various measuring instruments described above are arranged inside the housing 120! The light receiving elements and the cooling mechanism of the housing 120 are provided so as to minimize the influence of heat generation of the elements. As a cooling mechanism for the light receiving element, for example, a combination of a heat sink provided on the bottom wall of the housing 120 and a Peltier element connected to the heat sink is exemplified. Further, as a cooling mechanism of the housing 120 itself, for example, a liquid-cooling type mechanism for flowing a cooling liquid into a piping system can be adopted.

[0116] From the viewpoint of suppressing the influence of heat, in the above-described aerial image measurement device or wavefront aberration measurement device, for example, only a part of the optical system or the like is mounted on the measurement stage MST, and the light receiving element and the like are measured. The stage may be placed on a member away from the MST.

[0117] On the upper surface of the measurement table MTB, one end (one X-side end) in the X-axis direction is provided with an X movable mirror 117X having a reflecting surface orthogonal to the X-axis, extending in the Y-axis direction, At one end (one Y side end) in the direction, a Y moving mirror 117Y having a reflecting surface orthogonal to the Y axis is extended in the X axis direction. As shown in FIG. 2, the interferometer beam (length measuring beam) from the Y-axis interferometer 66 of the interferometer system 118 is projected onto the reflecting surface of the Y moving mirror 117Y, and the reflected light is reflected by the interferometer 66. By receiving the light, the displacement of the reflecting surface of the Y movable mirror 117Y is measured as much as the reference position force. In addition, when the measurement table MTB force is measured, for example, when it is moved directly below the projection unit PU, the interferometer beam (length measuring beam) from the X-axis interferometer 96 is projected on the reflecting surface of the X movable mirror 117X, and the interference By receiving the reflected light, the total 96 measures the displacement of the reflecting surface of the X movable mirror 117X as much as the reference position force. The Y-axis interferometer 66 has a length measurement axis parallel to the Y-axis direction that intersects perpendicularly with the length measurement axis of the aforementioned X-axis interferometer 96 at the projection center (optical axis AX) of the projection optical system PL. .

[0118] The Y-axis interferometer 66 is a multi-axis interferometer having at least three optical axes, and each optical axis can independently measure the displacement of the reflecting surface. The output value (measurement value) of this Y-axis interferometer 66 The main controller 50 is supplied to the controller 50, and based on the output value from the Y-axis interferometer 66, can measure not only the Y position of the measurement table MTB but also the pitching amount and the Zawing amount. Further, main controller 50 measures the X position and rolling amount of measurement table MTB based on the output value from X-axis interferometer 96.

[0119] As can be understood from the above description, in the present embodiment, the interferometer beam from the Y-axis interferometer 68 is always projected onto the movable mirror 67Y over the entire movement range of the wafer stage WST. The Y-axis interferometer 66-interferometer beam is always projected on the moving mirror 117Y over the entire moving range of the measurement stage MST. Therefore, in the Y-axis direction, the positions of stages WST and MST are always managed by main controller 50 based on the measurement values of Υ-axis interferometers 68 and 66.

On the other hand, as can be easily imagined from FIG. 2, main controller 50 controls X-axis interferometer 96 only within a range that hits interferometer beam force movable mirror 67 ° from X-axis interferometer 96. The X position of the wafer table WTB (wafer stage WST) is managed based on the output value, and the beam power of the interferometer from the X-axis interferometer 96 is based on the output value of the X-axis interferometer 96 only within the range of the movable mirror 117X. Then, manage the X position of measurement table ΜΤΒ (measurement stage MST). Therefore, while the X position cannot be controlled based on the output value of the X-axis interferometer 96, the positions of the wafer table WTB and the measurement table MTB are measured by an encoder (not shown), and the main position is determined based on the measurement value of the encoder. The control device 50 manages the positions of the wafer table WTB and the measurement table MTB.

[0121] In addition, main controller 50 controls the state in which the interferometer beam from X-axis interferometer 96 does not hit any of moving mirrors 67X and 117X. At that point, the X-axis interferometer 96 that was not used for control was reset, and thereafter, the Y-axis interferometer 68 or 66 and the X-axis interferometer 96 of the interferometer system 118 were used. , The position of the wafer stage WST or the measurement stage MST.

In the present embodiment, at least a part of the interferometer system 118 in FIG. 6 is configured by two Y-axis interferometers 66 and 68 and one X-axis interferometer 96. A configuration may be employed in which a plurality of interferometers are provided so that the beam force of any one of the X-axis interferometers hits the movable mirror 67X or 117X. In this case, Ueno, Stage WST, Measurement Stage M The X-axis interferometer that manages the ST position may be switched according to the X position of these stages.

[0123] In addition, the above-described multi-axis interferometer irradiates a laser beam onto a reflection surface installed on a holding member that holds projection unit PU through a reflection surface installed on stages WST and MST at an angle of 45 °. Alternatively, relative position information about the optical axis direction (Z-axis direction) of the projection optical system PL between the reflection surface and the stage may be detected.

In the exposure apparatus 10 of the present embodiment, a holding member for holding the projection unit PU includes an off-axis alignment system (hereinafter abbreviated as “alignment system”) ALG (not shown in FIG. 1, 6 and 7 (A) etc.). For example, this alignment-based ALG irradiates the target mark with a broadband detection light beam that does not expose the resist on the wafer, and the target mark image formed on the light-receiving surface by the reflected light with the target mark power. An image of the index (the index pattern on the index plate provided in the alignment system ALG) is captured using an imaging element (such as a CCD), and the image processing method FI A ( Field Image Alignment) type sensors are used. The imaging signal from the alignment ALG is supplied to main controller 50 in FIG.

[0125] The alignment type ALG is not limited to the FIA type, but irradiates a target mark with coherent detection light and detects scattered light or diffracted light that also generates the target mark force, or detects the target target ALG. A single alignment sensor that detects and interferes with two diffracted lights that also generate a mark force (for example, diffracted lights of the same order or diffracted in the same direction) is used alone. Of course, ヽ can be used in an appropriate combination .

The exposure apparatus 10 of the present embodiment includes a force irradiation system 110a and a light reception system 110b (see FIG. 6), which are not shown in FIG. 1, for example, as disclosed in Japanese Unexamined Patent Publication No. 6-283403 (corresponding US patents). No. 5, 448, 332), etc., a multi-point focal point position detection system of the oblique incidence type similar to that disclosed in Japanese Patent Application Laid-Open No. HEI 7-284, 1988 is provided. In the present embodiment, as an example, the irradiation system 110a is suspended and supported by a holding member that holds the projection unit PU on the negative X side of the projection unit PU, and the light receiving system 110b is mounted on the + X side of the projection unit PU. And suspended below the holding member! That is, the irradiation system 110a and the light receiving system 110b are mounted on the same member as the projection optical system PL, and the positional relationship between them is maintained constant. [0127] The multipoint focus position detection system may irradiate the detection light from the irradiation system 110a into the liquid immersion area formed by the water Lq, or may detect the detection light outside the liquid immersion area. May be irradiated. In addition, the multi-point focal position detection system is placed at a position far away from the projection unit PU force (for example, wafer replacement position), and height information (irregularity information) on the wafer surface is acquired before wafer exposure starts. You can!

FIG. 6 shows a main configuration of a control system of exposure apparatus 10. This control system is mainly configured by a main controller 50 including a microcomputer (or a workstation) that controls the entire apparatus as a whole. In addition, a memory 51 and a display DIS such as a CRT display (or a liquid crystal display) are connected to the main controller 50. In FIG. 6, the above-described uneven illuminance measuring device 104, illuminance monitor 122, reference illuminance monitor 122 ', an aerial image measuring device, a wavefront aberration measuring device, and the like are shown as a measuring device group 43.

In the exposure apparatus 10 of the present embodiment, the main controller 50 also has the functions of an exposure controller and a stage controller. Of course, these controllers may be provided separately from the main controller 50. It is.

Next, in the exposure apparatus 10 of the present embodiment configured as described above, the parallel processing operation using the wafer stage WST and the measurement stage MST will be described with reference to FIG. This will be described with reference to FIG. During the following operation, unless otherwise specified, the main controller 50 controls the opening and closing of each valve of the liquid supply device 138 and the liquid recovery device 139 of the liquid immersion device 132 as described above. The water immediately below the tip lens 91 of the projection optical system PL is always filled with water. However, in the following, description on control of the liquid supply device 138 and the liquid recovery device 139 will be omitted to facilitate the description.

[0131] FIG. 7 (A) shows a step-and-scan exposure for wafer W on wafer stage WST (here, for example, the last wafer of one lot (one lot is 25 or 50)). The state where light is being performed is shown. At this time, measurement stage MST waits at a predetermined standby position without colliding with wafer stage WST! /

[0132] In the above-described exposure operation, main controller 50 performs a process performed in advance by a wafer alignment result such as an Enhance, Global Alignment (EGA) and a reticle R and a wafer detected in advance. The positional relationship with the stage WST (wafer W) and the alignment ALG Based on the latest measurement results of the baseline, the movement between the shots that moves the wafer stage WST to the scan start position (acceleration start position) for exposure of each shot area on the wafer W, The scanning exposure operation of transferring the pattern formed on the reticle R to the area by the scanning exposure method is performed repeatedly.

[0133] Here, the movement operation between shots in which wafer stage WST is moved is performed by main controller 50 monitoring X-axis linear motor 79 and Y-axis This is performed by controlling your motors 82 and 83. In addition, the above scanning exposure is performed while monitoring the measured values of the main control unit 50 force interferometers 68 and 96 and the reticle interferometer 53 while the reticle stage drive unit 55 and the Y-axis linear motors 82 and 83 (and the X-axis linear By controlling the motor 79), the reticle R (reticle stage RST) and the wafer W (wafer stage WST) are scanned relative to each other in the Y-axis direction. This is achieved by synchronously moving the reticle R (reticle stage RST) and the reticle and the reticle W (the reticle, stage WST) with respect to the illumination light IL at a constant velocity in the Y-axis direction. The above-described exposure operation is performed in a state where water is held between the tip lens 91 and the wafer W.

Then, at the stage where exposure of wafer W held on wafer stage WST is completed, main controller 50 sets the Y-axis linear position based on the measurement value of interferometer 66 and the measurement value of an encoder (not shown). By controlling the motors 84 and 85 and the X-axis linear motor LX, the measurement stage MST (measurement table MTB) is moved to the position shown in FIG. 7 (B). In the state shown in FIG. 7B, the + Y side surface of the measurement table MTB is in contact with the Y side surface of the wafer table WTB. In addition, the measurement values of the interferometers 66 and 68 may be monitored to keep the measurement table MTB and the wafer table WTB apart by about 300 m in the Y-axis direction to maintain a non-contact state.

Next, main controller 50 starts an operation of simultaneously driving both stages WST and MST in the + Y direction while maintaining the positional relationship between wafer table WTB and measurement table MTB in the Y-axis direction.

In this way, when main controller 50 drives wafer stage WST and measurement stage MST simultaneously, in the state of FIG. 7B, tip lens 91 of projection optical system PL and wafer Hydraulic force held between W and wafer stage WST and measurement stage MST move in the + Y side and move sequentially from wafer W to wafer holder 70 to measurement table MTB. During the above movement, the wafer table WTB and the measurement table MTB maintain the positional relationship of contact with each other. Fig. 8 (A) shows the state when water is simultaneously present on the wafer stage WST and the measurement stage MST during the above movement, that is, just before water is passed on the wafer stage WST force measurement stage MST. State is shown.

When the wafer stage WST and the measurement stage MST are simultaneously driven a predetermined distance in the + Y direction from the state of FIG. 8A, as shown in FIG. 8B, the measurement stage MST and the tip lens are moved. The water is held between the air conditioner and 91. Prior to this, the main controller 50 started irradiating the moving mirror 117X on the measurement table MTB with the interferometer beam from the X-axis interferometer 96! / Perform a 96 reset. Further, in the state of FIG. 8B, main controller 50 manages the X position of wafer table WTB (wafer stage WST) based on a measurement value of an encoder (not shown).

[0138] Next, main controller 50 controls linear motors 79, 82, and 83 while controlling the position of wafer stage WST based on the interferometer 68 and the measurement values of the encoder, and performs predetermined wafer exchange. The wafer stage WST is moved to the position and replaced with the first wafer of the next lot, and in parallel with this, predetermined measurement using the measurement stage MST is performed as necessary. An example of this measurement is a baseline measurement of an alignment ALG performed after the reticle is replaced on the reticle stage RST. Specifically, main controller 50 includes a pair of first fiducial marks formed on fiducial mark plate FM2 on measurement table MTB, for example, reticle corresponding to first fiducial marks RM, RM.

11 12

The above reticle alignment marks are simultaneously detected using the above-described reticle alignment systems RAa and RAb to detect the positional relationship between the pair of first reference marks and the corresponding reticle alignment marks. At the same time, the main controller 50 sets a second fiducial mark paired with the first fiducial mark (RM, RM) on the fiducial mark plate FM2, in this case a second fiducial mark.

11 12

By detecting WM with the alignment ALG, the detection center of the alignment ALG and its

1

Detect the positional relationship with the second fiducial mark. Then, main controller 50 controls the pair of (1) The positional relationship between the fiducial mark and the corresponding reticle alignment mark, the positional relationship between the detection center of the alignment ALG and the second fiducial mark, and the positional relationship between a pair of known first fiducial marks and the second fiducial mark. Then, the distance between the projection center of the reticle pattern by the projection optical system PL and the detection center of the alignment system ALG (hereinafter, referred to as a “first distance” for convenience) is obtained. The state at this time is shown in FIG.

[0139] Next, main controller 50 moves reticle stage RST and measurement table MTB stepwise in the Y-axis direction, and performs another step formed on reference mark plate FM2 on measurement table MTB in the same manner as described above. Corresponds to a pair of first fiducial marks, for example, first fiducial marks RM, RM

21 22 The reticle alignment marks on the reticle are simultaneously detected using the reticle alignment systems RAa and RAb described above, and at the same time, the reticle alignment marks forming pairs with the first fiducial marks (RM, RM).

21 22

2Detect the fiducial mark (WM) with the alignment ALG. And main controller 50 is

2

The position of the reticle alignment mark corresponding to the pair of first fiducial marks (RM, RM)

21 22

Relationship and alignment system The positional relationship between the ALG detection center and the second fiducial mark (WM)

2

Projection optical system P based on the known positional relationship between the first fiducial mark and the second fiducial mark of

Distance between the center of projection of the reticle pattern by L and the center of detection of the alignment ALG (hereinafter

, "The second distance").

[0140] Main controller 50 further detects the remaining first fiducial mark and second fiducial mark in the same manner as described above, and projects the projection center of the reticle pattern by projection optical system PL and the alignment system.

The distance from the ALG detection center (third distance) may be obtained.

[0141] Then, main controller 50 sets the average value of at least two of the first, second, and third distances as the baseline (measured value) of the alignment ALG. Further, main controller 50 uses the reticle stage coordinate system defined by the length measurement axis of reticle interferometer 53 and the length measurement axes of interferometers 68 and 96 of interferometer system 118 based on the above positional relationships. Obtain the relationship with the specified wafer stage coordinate system.

In the present embodiment, the detection of marks using the above-described reticle alignment systems RAa and RAb is performed via the projection optical system PL and the water Lq.

[0143] At the stage where the work on both stages WST and MST is completed, main controller 50 brings measurement stage MST and wafer stage WST into contact with each other, and changes the state. While maintaining, drive in the XY plane to return the wafer stage WST directly below the projection unit. Even during this movement, the main controller 50 irradiates the interferometer beam from the X-axis interferometer 96 to the moving mirror 67Χ on the wafer table WTB! / A total of 96 resets have been performed. Then, the wafer alignment, that is, the alignment mark on the replaced wafer by the alignment system ALG is detected for the replaced wafer held by the wafer stage WST, and the positions of the plurality of shot areas on the wafer are detected. Calculate the coordinates. As described above, measurement stage MST and wafer stage WST may be in a non-contact state.

Thereafter, main controller 50 simultaneously drives both stages WST and MST in the −Y direction while maintaining the positional relationship in the の -axis direction between wafer stage WST and measurement stage ΜST, contrary to the above. After moving the wafer stage WST (Ueno) below the projection optical system PL, the measurement stage MST is retracted to a predetermined position.

[0145] Next, main controller 50 moves ueno and stage WST to a position where a pair of first fiducial marks on fiducial mark plate FM1 can be simultaneously detected by a pair of reticle alignment detection systems RAa and RAb described above. And a pair of first reference marks on the reference mark plate FM1 and a pair of reticle alignment marks on the corresponding reticle are simultaneously detected using the reticle alignment system RAa and RAb, and correspond to the pair of first reference marks. Detects the positional relationship of the reticle alignment marks (ie, the positional relationship between reticle R and wafer stage WST (wafer W)).

[0146] In the present embodiment, after the wafer is replaced, the first fiducial mark on fiducial mark plate FM1 and the corresponding reticle alignment mark on the reticle are detected using reticle alignment systems R Aa and RAb. This force may be omitted.

[0147] Thereafter, main controller 50 performs the above-described processing on a new wafer based on the above positional relationship, the previously measured baseline, the results of the wafer alignment, and the measured values of interferometers 68 and 96. In the same step, the exposure operation of the 'and' scan method is executed, and the reticle pattern is sequentially transferred to a plurality of shot areas on the wafer.

[0148] In the above description, the case where the baseline measurement is performed as the measurement operation is described. However, the present invention is not limited to this. Measurement stage Performs at least one of illuminance measurement, illuminance unevenness measurement, aerial image measurement, and wavefront aberration measurement using the measuring instruments in the MST measuring instrument group 43, and uses the measurement results for subsequent wafer exposure. It may be reflected. Specifically, for example, the above-described imaging characteristic correction controller 181 can adjust the projection optical system PL based on the measurement result.

By the way, as described above, the measurement using each of the measuring instruments is performed by measuring the measuring members (optical member 126, pattern plate 103, slit plate 105, wavefront aberration measuring pattern plate 107) of the measuring table MTB. ) Is filled with water (liquid) Lq, so that a water-repellent HWRF as a liquid-repellent film is formed on the surface (upper surface) of each measurement member. However, as described above, the water-repellent film WRF deteriorates when exposed to ultraviolet light for a long time, which is weak to ultraviolet light, and its light transmittance decreases. Among the various measurements, the decrease in the light transmittance of the water-repellent film WRF is measured by the illuminance monitor 122, which measures the amount of illumination light IL itself on the image plane of the projection optical system PL, and the measurement value of the illuminance unevenness measuring device 104. Have a great effect on The illuminance monitor 122 and the illuminance non-uniformity measuring device 104 are model functions used for the prediction calculation when, for example, performing a prediction calculation such as an irradiation variation of an imaging characteristic of the projection optical system PL or a transmittance variation. This is used when measuring the transmittance of a reticle or a projection optical system for setting initial conditions for determining the transmittance. Alternatively, the measurement results of the illuminance monitor 122 and the illuminance unevenness measuring device 104 are used to control the integrated exposure amount (dose amount) for the wafer W.

In exposure apparatus 10 of the present embodiment, with respect to the measurement value of illuminance monitor 122, a method of calibrating the measurement value (output) of illuminance monitor 122 so as to minimize the influence of the decrease in light transmittance of water-repellent film WRF. Has been adopted. Hereinafter, this method will be described. FIG. 10 shows a flowchart corresponding to the processing algorithm of the CPU in main controller 50, which is related to the calibration of the measurement value (output) of illuminance motor 122.

[0151] The processing shown in the flowchart of Fig. 10 starts when the illuminance (average) of the illuminating light IL on the image plane of the projection optical system PL is obtained by an instruction from a higher-level device or an operator, or by processing according to a predetermined program. This is when the need for illuminance) measurement arises.

[0152] As a prerequisite, the reticle is unloaded from reticle stage RST! That is, the reticle stage RST does not have a reticle.

First, in step 302, the measurement stage MST (measurement table MTB) is moved so that the illuminance monitor 122 is located immediately below the projection optical system PL. Of course, at this time, if the wafer stage WST is located below the projection optical system PL! /, If the wafer stage WST is also retracted under the projection optical system PL, the measurement stage MST ( Needless to say, the measurement table MTB) is moved. In the present embodiment, “the position immediately below the projection optical system PL” refers to the projection area on the image plane of the illumination area IAR defined by the above-mentioned fixed blind (irradiation of the illumination light IL on the image plane). The center of the region, that is, the exposure region IA) (substantially coincides with the optical axis of the projection optical system PL) substantially coincides with the center of the light receiving surface of the illuminance monitor 122.

[0154] The illuminance monitor 122 on the measurement stage MST moves directly below the projection optical system PL while the water (liquid) Lq is held on the image plane side of the projection optical system PL (immediately below the tip lens 91). Therefore, the space between the tip lens 91 of the projection optical system PL and the upper surface of the illuminance monitor 122 is filled with the liquid Lq.

[0155] In the next step 306, the illuminance monitor 122 measures the image plane illuminance of the projection optical system PL, and acquires the measurement value P. Specifically, the light source 16 emits a test light emission of a predetermined pulse number, and the projection optical system PL, water Lq, and water repellent HWRF emitted from the light source 16 pass through the illumination optical system 12 without passing through a reticle. The illumination light IL (first detection light) that has passed through is received by the first sensor 128 of the dose monitor 122 for each pulse, and the output (detection) of the first sensor 128 (that is, the dose monitor 122) for each pulse is received. Signal). The above test light emission, in which the output (detection signal) of the dose monitor 122 is taken, is the average of each pulse of the output DS (digitZpulse) of the integrator sensor 46 (or the output of the energy monitor inside the light source 16). This is performed while the light source 16 is feedback-controlled so that the value becomes a desired value. Then, an average value of a predetermined number of pulses integrated value of the output of the resulting irradiation monitor 122, the measurement value of the image plane illuminance _P; obtained as. Here, i indicates that the illuminance (average illuminance) of the image plane of the projection optical system PL is the i-th measurement value from the initial state (at the start of use of the irradiation amount monitor 22). After the measurement value P is obtained, the water immediately below the tip lens 91 is collected.

[0156] In the next step 308, the processing in step 306 is the first illuminance measurement. Judge. If it is the first time (the first time since the start of use of the irradiation amount monitor 22 (the time when the water-repellent film WRF is not degraded at all)), the determination in step 308 is affirmed, and the process proceeds to step 310. Transition. In this step 310, the measurement stage MST (measurement table MTB) is moved so that the reference illuminance monitor 122 'is located immediately below the projection optical system PL.

[0157] In the next step 312, the reference illuminance monitor 122 'measures the image plane illuminance of the projection optical system PL, and acquires the measurement value Pref. Specifically, the average value of the output DS (digit / pulse) of the integrator sensor 46 (or the energy monitor inside the light source 16) becomes a desired value (the same value as in step 306) as in step 306 described above. The reference illuminance monitor 122 receives the illumination light IL that has passed through the projection optical system PL without passing through the reticle, while causing the light source 16 to perform test emission of a predetermined number of pulses while performing feedback control of the light source 16. Capture the output (detection signal) of '. Then, the average value of the outputs of the illuminance monitor 122 'for a predetermined number of pulses is acquired as the measured value Pref.

[0158] In the next step 314, the measured value P = P obtained in the above step 306 and the above step

i 1

Calculate the ratio (P / Pref) to the measured value Pref = Pref obtained in 312 and

i 1 1 1

After storing in the initial value storage area, the process proceeds to step 316 to set γ = 1 as an initial value of a correction parameter γ (calibration information) for compensating for a decrease in the light transmittance of the water-repellent film (γ in the internal memory). After that, the process proceeds to step 332. Here, γ is a correction parameter defined by the following equation (1).

[0159] [Number 1]

7 =…)

Pref,

[0160] Accordingly, at the time of the first measurement, since i = 1, the right side of equation (1) = 1, so that in step 316, γ = 1.

On the other hand, if the processing in step 306 is the second or subsequent illuminance measurement, the determination in step 308 above is denied, and the flow shifts to step 318. This step 318 Then, referring to the log data of the device, the number of irradiation pulses n to the illuminance monitor 122 from the previous update of γ (or at the time of setting:

0

It is determined whether the force has been reached or not, and if this determination is affirmed, the process proceeds to step 320. In step 318, by determining whether or not the irradiation pulse number n has reached the predetermined pulse number N, the accumulated irradiation amount of the illumination light IL to the illuminance monitor 122 (integrated irradiation energy amount) is substantially determined. Is to determine whether or not the force has reached a predetermined amount. Therefore, it may be determined whether or not the integrated light amount of the illumination light IL to the illuminance monitor 122 from the time of the previous update of _Ί , which is different from the irradiation pulse number n, has reached a predetermined value.

[0162] In step 320, the measurement stage MST (measurement table MTB) is moved to a position where the reference illuminance monitor 122 'is located immediately below the projection optical system PL, as in step 310 described above, and then the process proceeds to the next step 322. Then, the image plane illuminance of the projection optical system PL is measured by the reference illuminance monitor 122 'in the same manner as in step 312, and the measured value Pref is obtained. In this case, the illumination light IL emitted from the light source 16 is received by the reference illuminance monitor 122 '(via the projection optical system PL) without passing through the liquid repellent film and the water Lq.

[0163] In the next step 324, the ratio (P / Pref) between the measured value P. obtained in step 306 and the measured value Pref obtained in step 322 is calculated, and a predetermined storage area in the internal memory is calculated. After that, the process proceeds to step 326. In this step 326, the correction value γ defined by the above equation (1) is updated. The update of γ is performed by reading out the data stored in the above-described initial value storage area and the data stored in the predetermined storage area at that time, and then using these, by the calculation of equation (1). This is realized by calculating γ and overwriting the calculation result in the γ storage area.

[0164] In the next step 328, the parameters ρ and η are each initialized to 0, and the process proceeds to step 332. Here, the parameters ρ are parameters included in the model formula expressed by the following equation (2), which are used for estimating a parameter δ (calibration information) described later, and t is the initial time t the elapsed time of the force [sec], and p is the total irradiation power of the illuminance monitor 122 at the initial time t.

0 0

One (ie, the total energy applied to the illuminance monitor 122 after t) Q []. Ma

0

Η is the number of irradiation pulses described above.

[0165] [Number 2]

In the above equation (2), Tt is a time-dependent damping coefficient [sec], and Tp is an energy-dependent damping coefficient [sec].

[0167] Here, the reason for adopting the above equation (2) will be described.

[0168] A function represented by the following equation (3) can be used as a model equation (transfer function) indicating a change in light transmittance of the water-repellent film.

[0169] [Equation 3] η = η, ₀ χ β ¹⁰ xe ^Tp ■■■ {?>)

Here, r? Is the light transmittance of the current water-repellent film, and the light transmittance of the water-repellent film in r?) Is

And t, Tt, p, and Tp are as described above. Note that the time-dependent damping coefficient Tt and the energy-dependent damping coefficient Tp are determined in advance based on simulation results and the like.

[0171] As is apparent from the above equation (3), the light transmittance of the water-repellent film decreases as the elapsed time t increases. Therefore, in order to compensate for the decrease in the measured value of the image plane illuminance by the illuminance monitor 122 due to the temporal decrease in the light transmittance of the water-repellent film, the nomometer increases with the lapse of time. However, parameters related to the function of the above equation (3) must be used.

[0172] Therefore, the equation (3) is modified to change the light transmittance of the water-repellent film at the initial time (t) and the light of the current water-repellent film.

0

When a function representing the ratio to the transmittance is obtained, the following equation (4) is obtained.

[0173] [Number 4]

^ i = e ^T 'xe ^7p--- (4)

[0174] The parameter represented by the function of equation (4) is a parameter that increases as the elapsed time increases, and is a parameter related to the function of equation (3). Therefore, the parameter γ, which is updated each time measurement is performed by the reference illuminance monitor 122 ′, is initialized at time t. The model function of the above equation (2) corresponding to the product of γ and the above equation (4) is used for estimating the calibration parameter δ of the output (measured value) of the illuminance motor 122. It is said that.

[0175] In step 332, by setting the value of δ = γ by copying and overwriting the γ stored in the γ storage area at that point in the storage area of the calibration parameter δ, Move to 334.

[0176] On the other hand, if the determination in step 318 is denied, the flow shifts to step 330 to update the calibration parameter δ defined by the above equation (2). The updating of δ is realized by reading out the data stored in the γ storage area described above, calculating δ by the operation of equation (2), and overwriting the calculation result in the δ storage area. You. Here, the integrated irradiation power p of the illuminance monitor 122 from the initial time t required for the festival of the calculation of the equation (2) is

0

It is determined as follows.

[0177] That is, every time the illuminance (irradiation power) is measured on the image plane of the PL of the projection optical system using the illuminance monitor 122, the irradiation power per unit time [W] (Or the irradiation power per pulse CiZpulse]) is calculated and the time for the corresponding dose measurement (or the number of pulses for the corresponding dose measurement) is given to the illuminance monitor 122 (ie the illuminance monitor 122). This is stored in the memory 51 as light irradiation history data (for the water repellent film WRF).

[0178] Therefore, for each measurement, the irradiation power per unit time (or 1 pulse) and the time during which the corresponding dose measurement is performed (or the number of pulses of the corresponding dose measurement festival) are read out. By multiplying them, the irradiation energy during one measurement is calculated. Such calculation is performed for measurements performed after the initial time t, and the obtained

0

Calculate the total energy after the initial time t by calculating the total irradiation energy

0

After the calibration parameter δ is updated in step 330 as described above, the flow shifts to step 334 described above.

[0180] In step 334, the measurement value で obtained in step 306 is multiplied by the calibration parameter δ to compensate for the effect of the light transmittance variation of the water-repellent film, and Ρ = δ Χ 、 is calculated as the image plane illuminance measurement result. age Output, for example, on the display DIS, and stored in the internal memory or the memory 51.

[0181] After the processing of step 334 is completed, the processing of this routine is completed, and the process proceeds to normal processing. When the change (decrease) in the light transmittance of the water-repellent film WRF on the optical member 126 is small, the processing algorithm in the flowchart of FIG. In this case, if any measurement using the illuminance monitor 122 is performed before the processing algorithm of the above flowchart is executed next, the measured value P of the illuminance monitor 122 obtained by the measurement is used. By performing various processes for exposing the wafer W using the value multiplied by the calibration parameter δ stored in the δ storage area at that time instead of the measurement value of the illuminance monitor 122, the illuminance monitor 122 Water-repellent film on the surface Processing that is hardly affected by fluctuations in the light transmittance of the WRF can be performed.

[0182] In the above-described embodiment, a case will be described in which reference illuminance monitor 122 'on measurement table として is used as a reference sensor (second sensor) used to acquire reference data for updating correction value γ. However, the invention is not limited thereto, and an integrator sensor 46 that can receive the illumination light IL without passing through the liquid repellent film may be used. In this case, a processing algorithm corresponding to the flowchart in which the processing of steps 310, 312, 320 and 322 in the flowchart of FIG. 10 described above is omitted can be adopted. The reason is that when the integrator sensor 46 is used as the second sensor, in step 306 described above, the illuminance monitor 122 emits the light from the light source 16 on the image plane of the projection optical system PL and the illumination optical system 12 and the projection optical system PL. When the illuminance is measured by receiving the light that has passed through as the first detection light and measuring the illuminance at the same time, the light emitted from the light source 16 is emitted from the light source 16 by the integrator sensor 46 on the optical path inside the illumination optical system 12. The split light (illumination light IL) is received as the second detection light. That is, in step 306, the simultaneous measurement by the illuminance monitor 122 (the first sensor 128) and the integrator sensor 46 are inevitably performed.

[0183] Alternatively, on the reticle stage RST, which is movable from the light source 16 to the projection optical system PL via the illumination optical system 12 and in a plane perpendicular to the optical path of the directional light (illumination light IL), the reference sensor ( A second sensor) may be provided, and at least a part of the illumination light IL may be received as second detection light on the optical path by the reference sensor. This reticle stage RST When the upper reference sensor is used, even if the reticle R is still loaded on the reticle stage RST, the illumination light IL is received by the reference sensor only by moving the reticle stage RST. This has the effect of preventing the disadvantages of the throughput evil.

[0184] Note that calibration of the measurement value (output) of the uneven illuminance measuring device 104 can be realized in the same manner as in the case of the illuminance monitor 122 described above, and a detailed description thereof will be omitted. In this case, when a reference sensor (second sensor) used for acquiring reference data for updating the correction value γ is provided on the measurement table ΜΤΒ, the water repellent is located on the top of the pattern plate 103 as the reference sensor. Except that no film is formed, a calibration sensor similar to the illumination unevenness measuring instrument 104 described above can be used.

Further, in the exposure apparatus such as the exposure apparatus 10 of the present embodiment, the illumination light IL incident on the projection optical system PL is used for predicting a change in the imaging characteristic due to the absorption of the illumination light of the projection optical system PL. It is a prerequisite to know the reflectivity of the wafer together with the amount of irradiation. At the time of the wafer reflectance measurement, the measurement reflection plate 102 on the measurement table MTB is used. Since the measurement using the measurement reflector 102 is repeatedly performed as necessary, the water-repellent film on the surface of the measurement reflector 102 is deteriorated with time by the irradiation of the illumination light IL, and the light transmittance is reduced. Deteriorates. In the wafer reflectivity measurement method, it is assumed that the reflectivity of each of the high-reflection surface area 102H and the low-reflection surface area 102L of the measurement reflector 102 is known and does not change. Has been done. Therefore, when the wafer reflectance is measured using the method disclosed in the above publication (corresponding U.S. patent) as it is using the measurement reflector 102, the water-repellent film on the surface of the measurement reflector 102 is measured. As a result, an error may occur in the measurement result of the wafer reflectance due to the influence of the decrease in the light transmittance, and an error may occur in the prediction result of the imaging characteristic change due to the absorption of the illumination light of the projection optical system PL. In view of the power, in the present embodiment, prior to the measurement of the reflectance of the wafer on the wafer stage WST, as a pre-stage, the high reflection surface area 102H and the low reflection surface area 102L of the measurement reflector 102 are measured. Calibration of information related to reflectance. Hereinafter, this calibration method will be described. FIG. 11 shows a flowchart corresponding to the processing algorithm of the CPU in main controller 50 relating to the calibration of the information relating to the reflectance! [0186] The processing shown in the flowchart of Fig. 11 starts when measurement of the wafer reflectance is required by an instruction from a higher-level device or an operator, or by processing according to a predetermined program.

As a precondition, it is assumed that the reticle is unloaded from reticle stage RST! (That is, there is no reticle on the optical path of illumination light IL).

First, in step 402, it is determined whether or not the force is the first measurement. And the second

If this is the first measurement (from the start of use of the measurement reflector 102 (the time when the water-repellent film on the surface of the measurement reflector 102 has not deteriorated at all)), the measurement is performed in step 402. If the determination is affirmative, the process proceeds to step 406.

On the other hand, if the determination in step 402 is denied, the flow advances to step 404 to refer to the log data of the apparatus, and to determine the correction parameters _γ and _Ύ (this will be described later).

1 2

It is determined whether the number n of irradiation pulses to the measuring reflector 102 from the time of updating (or the time of setting) has reached a predetermined number N of pulses, and if this determination is affirmed, the process proceeds to step 406. Transition.

[0190] In step 406, measurement stage MST (measurement table MTB) is moved to a position where reference reflection plate 202 is located immediately below projection optical system PL. Of course, at this time, if the wafer stage WST is positioned below the projection optical system PL! /, The wafer stage WST is also retracted under the projection optical system PL, and then the measurement stage MST (measurement Needless to say, the table MTB is moved! /.

[0191] In the next step 408, a measurement value Rref (reference data) of the reflection amount monitor 47 is obtained.

Specifically, the light source 16 is caused to emit test light of a predetermined pulse number, and the illumination light IL from the illumination optical system 12 is applied to the reference reflector 202 via the projection optical system PL without passing through a reticle. Then, the reflected light from the reference reflector 202 is received for each pulse by the reflection amount monitor 47 via the projection optical system PL, and the output (detection signal) of the reflection amount monitor 47 for each pulse is captured. The above test light emission, in which the output (detection signal) of the reflection amount monitor 47 is taken, is desired to have an average value for each pulse of the output DS (digitZpulse) of the integrator sensor 46 (or the output of the energy monitor inside the light source 16). The feedback control is performed on the light source 16 so that the value becomes as follows. Then, the predetermined value of the integrated value of the output of the obtained reflection amount monitor 47 is determined. The average value of the number of pulses is obtained as the measured value Rrei; Here, i indicates the i-th measured value from the initial state.

In the next step 410, measurement stage MST (measurement table MTB) is moved to a position where high reflection surface area 102H of measurement reflection plate 102 is located immediately below projection optical system PL.

[0193] In the next step 414, the measurement value RH of the reflection amount monitor 47 is obtained. Specifically, the high-reflection surface area 102H of the measurement reflector 102 on the measurement stage MST is moved directly below the projection optical system PL, and the image of the projection optical system PL is Water (liquid) Lq is supplied to the surface side (immediately below the front lens 91), and the liquid Lq is filled between the front lens 91 of the projection optical system PL and the high reflection surface area 102H of the measuring reflector 102. Then, the light source 16 is caused to emit the same test light emission as in the step 408, and the illuminating light IL from the illumination optical system 12 passes through the projection optical system PL and the water Lq without passing through the reticle, and a liquid-repellent film is formed on the surface thereof. Irradiate the high-reflection surface area 102H of the formed reflection plate 102 for measurement. The reflected light from the measuring reflector 102 is received for each pulse by the reflection monitor 47 via the water Lq and the projection optical system PL, and the output value (detection signal) of the reflection monitor 47 for each pulse is integrated. The average value of the predetermined number of pulses is obtained as the measurement value RH as the measurement data.

[0194] In the next step 416, the measurement stage MST (measurement table MTB) is moved so that the low reflection surface area 102L of the measurement reflection plate 102 is located directly below the projection optical system PL. This movement is performed while holding the water Lq between the tip lens 91 of the projection optical system PL and the measurement table MTB.

[0195] In the next step 418, the same test light emission as in the above step 414 is performed, and the illumination light IL from the illumination optical system 12 is passed through the projection optical system PL and the water Lq without passing through the reticle. Irradiation is performed on the low reflection surface area 102L of the measurement reflection plate 102 on which the liquid repellent film is formed. Then, the reflected light from the measuring reflector 102 is received for each pulse by the reflection amount monitor 47 via the water Lq and the projection optical system PL, and the output (detection signal) of the reflection amount monitor 47 for each pulse is received. Acquire and acquire the average value of the predetermined number of pulses of the integrated value of the output as the measurement value RL as the measurement data.

[0196] In the next step 422, the ratio (RH / Rref), (RL / Rref) of each of the measured values RH and RL obtained in steps 414 and 418, respectively, to the measured value Rref obtained in step 408 above. After calculating Rrel and storing them in predetermined storage areas in the internal memory, the process proceeds to step 424.

[0197] In step 424, it is again determined whether or not the force is the first measurement, as in step 402 described above, and if this determination is affirmed, the flow proceeds to step 425 to proceed to step 422. The ratio (RH H / Rref) and the ratio (RL / Rref) calculated in the above are stored in the initial value storage area in the internal memory.

1 1 1 1

After that, go to step 426.

In step 426, a correction parameter γ for compensating for a decrease in light transmittance of the water-repellent film is set.

One

, Y of moly γ

2 Set 1 as the initial value for each (stored in the internal memory area) and end the processing of this routine. Here, the correction parameters _Ύ and y of the water-repellent film are _respectively

1 2

This is a correction parameter defined by the following equations (5) and (6).

[0199] [Number 5]

[0200] [Number 6]

[0201] Therefore, at the time of the first measurement, since i = l, the right side of each of Expressions (5) and (6) = 1, so that in Step 426, γ = 1 and γ = 1 It is.

1 2

[0202] On the other hand, if the measurement is the second or later measurement, the determination in step 424 is denied, and the flow shifts to step 428 to perform the correction defined by the above equations (5) and (6). Values γ, y

Update 1 2. This γ, Ύ

12 is updated by reading the data stored in the above-described initial value storage area and the data stored in the predetermined storage area at that time, and using these, the equations (5) and (6) are used. ), Γ and y are calculated, and the calculation result is expressed as γ

1 2

Γ and Ύ stored in the storage area

This is achieved by overwriting 1 and 2.

[0203] On the other hand, if the determination in step 404 is negative, Terminating the process.

[0204] Thereafter, the process proceeds to, for example, a normal wafer reflectivity measurement process. The method of measuring the wafer reflectivity is described in, for example, Japanese Patent Application Laid-Open No. 11-258498, Japanese Patent Application Laid-Open No. 62-183522, and corresponding US Pat. It is disclosed in detail in U.S. Pat. No. 5,721,608. When a method similar to the method disclosed in these publications is executed by the exposure apparatus 10 of the present embodiment, the following method may be used.

First, main controller 50 sets exposure conditions (reticle R, reticle blind, illumination conditions, etc.) in the same manner as in actual exposure.

Next, main controller 50 moves measurement stage MST (measurement table MTB) to a position where high reflection surface region 102H of measurement reflection plate 102 is located immediately below projection optical system PL. At this time, the area immediately below the front lens 91 of the projection optical system PL, that is, the space between the upper surface of the measuring reflector 102 and the front lens 91 is filled with water.

Next, main controller 50 causes light source 16 to emit light (laser oscillation) and moves reticle stage RST under the same conditions as the actual exposure (when the area of reflection plate 102 for measurement is sufficiently large). The output RH of the reflection amount monitor 47 and the output of the integrator sensor 46 are synchronized with the reticle stage RST and the wafer stage WST under the same conditions as the actual exposure.

0

The scanning position (synchronized movement)

H0

Output RH of the reflection amount monitor 47 according to the position) and the corresponding integrator sensor.

0

The output DS of the memory 46 is stored in the memory 51. As a result, the output RH of the reflection amount monitor 47,

H0 0 and output of integrator sensor 46 DS force Function and function according to the scanning position of reticle R

H0

Then, it is stored in the memory 51. Next, in main controller 50, measurement stage MST (measurement table MTB) is moved to a position where low-reflection surface area 102L of measurement reflection plate 102 is located immediately below projection optical system PL. , The output RL of the reflection amount monitor 47, and

0 Use the output DS of the integrator sensor 46 as a function according to the scanning position of the reticle R.

L0

Stored in Mori 51.

[0208] Main controller 50 executes such preparation work prior to exposure.

[0209] At the time of actual exposure, the reflection amount stored in accordance with the scanning position of reticle R is stored. Based on the output of the monitor 47, the output of the integrator sensor 46, and the output R of the reflection amount monitor 47 during exposure and the output DS of the integrator sensor 46, the wafer reflectance R is calculated by the following equation (

1 W

Calculated based on 7).

[0210] [Number 7]

However

DS

DS _H0

[0211] In the above equation (7), γ and y updated in step 428 described above are included.

1 2 1

, Y stored in the memory 51 as a function corresponding to the scanning position of the reticle R.

2

The outputs RH and RL of the reflection monitor 47 are calibrated. Therefore, it is calculated by the above equation (7).

0 0

The wafer reflectivity R is measured by the effect of a decrease in light transmittance of the water-repellent film on the surface of the measurement reflector 102.

W

It is a high-precision value that is not qualitatively received. Therefore, this wafer reflectivity R is, for example,

W

The light transmission of the water-repellent film of the measurement reflector 102 described above is used by estimating the change of the imaging performance due to the absorption of the illumination light of the projection optical system PL disclosed in JP-A-11-258498 and the like. This makes it possible to perform highly accurate estimation calculation of the change in imaging performance, which is hardly affected by the fluctuation of the rate over time. Therefore, it is necessary to correct the imaging performance other than the focus of the projection optical system PL in consideration of the estimation calculation result, and to control the Z position of the wafer W during scanning exposure in consideration of the change in focus. Thus, the reticle pattern can be transferred onto the wafer W with high accuracy.

[0212] As is clear from the above description, in the present embodiment, at least each of the measurement processing device, the arithmetic device, the compensating device, and the correcting device is controlled by the main control device 50, more specifically, the CPU and the software program. Some have been realized. That is, at least a part of the processing unit is realized by the processing of steps 302, 304, 306, 320, and 322 in FIG. 10 performed by the CPU, and the processing unit is executed by the processing of steps 324 and 326 performed by the CPU. At least some of them have been realized. Also, according to the processing of steps 332 and 334 performed by the CPU, Thus, at least a part of the compensator is realized, and the processing of steps 318 and 330 performed by the CPU realizes at least a part of the corrector. Further, the main controller 50 controls at least a part of the controller that controls the exposure operation on the object based on the output of the sensor and information related to the change in the light transmittance (beam transmittance) of the liquid repellent film. Is configured.

As described above in detail, according to the calibration method for calibrating the output of the first sensor 128 performed by the exposure apparatus 10 of the present embodiment, the reference illuminance monitor (the second sensor The second detection light is received by 122 ', and the output (Pref) of the reference illuminance monitor 122' corresponding to the received light amount is obtained (step 322). That is, the output (Prel) of the reference illuminance monitor 122 'which is not affected by the change in the light transmittance of the liquid-repellent film is obtained. The first detection light is received by the first sensor 128 via the liquid-repellent film. Then, the output (P) of the first sensor corresponding to the received light amount is obtained (step 306), in which case the output (P) of the first sensor 128 is determined by the effect of the temporal change in the light transmittance of the liquid-repellent film. Receive directly.

Then, calibration information δ (or γ) for calibrating the output of the first sensor 128 is obtained based on the output of the first sensor 128 and the output of the reference illuminance monitor 122 (steps 324 to 324). 332). In this case, the relationship (P ZPref) between the output of the first sensor 128 and the output of the reference illuminance monitor 122 ′ obtained in advance and the output of the first sensor 128 and the output of the reference illuminance monitor 122, are used.

1 1

Then, calibration information for calibrating the output of the first sensor 128 is obtained. When the output of the first sensor 128 is calibrated using this calibration information, the output of the first sensor 128 after the calibration is accurate optical information (image plane) without being affected by the change in the light transmittance of the liquid-repellent film. (Illuminance).

Further, according to the exposure method executed by the exposure apparatus 10 of the present embodiment, the output of the first sensor 128 calibrated using the above-described calibration method, that is, the influence of the change in the light transmittance of the liquid-repellent film. Exposure to the wafer W is performed in consideration of the accurate measured value of the image plane illuminance, so that the light transmittance of the liquid-repellent film is not affected by the change over time. High-precision immersion exposure can be performed over a long period of time.

Further, according to exposure apparatus 10 of the present embodiment, main controller 50 detects detection light via a liquid-repellent film on the surface of a member (eg, optical member 126) disposed on the image plane side of projection optical system PL. age Since the exposure operation for the wafer W is controlled based on the output of the sensor (for example, the first sensor 128) that receives all the illumination light IL and information related to the change in the light transmittance of the liquid repellent film, High-precision wafer exposure is possible over a long period without being affected by changes in the light transmittance of the liquid film.

In addition, according to the exposure apparatus 10 of the present embodiment, the pattern of the reticle R is transferred onto the wafer with high precision by performing the exposure with high resolution and a large depth of focus as compared with that in the air by immersion exposure. For example, it is possible to realize the transfer of a fine pattern of about 70 to LOOnm as a device rule.

In the above embodiment, each time the number of irradiation pulses of the illumination light IL (energy beam) to the illuminance monitor 122 reaches a predetermined number, the reference illuminance monitor 122 ′ performs projection without passing through the water-repellent film. Absolute value calibration in which the illuminance measurement of the image plane of the optical system PL is performed, and the measurement value (output) of the measurement value (output) of the illuminance monitor 122 is used to update the correction parameter γ for decreasing the light transmittance of the water-repellent film. Until the parameter γ is updated, the estimation calculation using the model function (transfer function) of Equation (2) described above is used together with the estimation calculation calibration for updating the parameter γ. I explained the case. However, the present invention is not limited to this. For example, only the absolute value calibration or only the estimation calculation using the model function is performed on the surface of the member arranged on the image plane side (beam exit side of the optical system) of the projection optical system PL. Variations in the light transmittance (beam transmittance) of the liquid-repellent film (for example, the water-repellent film) may be predicted. Examples of the member include a measurement member arranged on the image plane side of the projection optical system PL (a beam emission side of the optical system), for example, a measurement member having a predetermined light transmission portion (a pinhole, a slit, Or the above-mentioned pattern plate or slit plate with a rectangular aperture, etc.), a measurement member with a reference mark (such as the reference mark plate), a measurement member with a reflective surface (such as a reflection plate for measurement), etc. Can be

[0219] When only the estimation calculation using the latter model function is performed, a predetermined function that uses information related to the irradiation history of light (energy beam) irradiated to the liquid-repellent film as input information is used as a model function. be able to. The model function includes, for example, a function including an integrated amount of light (energy beam) applied to the liquid-repellent film as information related to the irradiation history of light (energy beam) applied to the liquid-repellent film. Using the model function of equation (3) be able to. At this time, the initial time t is initially set to 0, and the light transmittance of the liquid-repellent film (beam transmission

0

Start the prediction calculation to predict the change in rate.

[0220] In the above description and the above-described embodiment, the power that determines the light transmittance (beam transmittance) attenuation based on the total energy applied is as follows. When a pulsed light source is used as the light source as in the above-described embodiment, An integrated value of the number of light emission pulses may be used instead of the total energy. In this case, the parameter p in the above equation (3) is the number of emission pulses irradiated after t.

0

The integrated value may be used, and the coefficient Tp may be an emission pulse-dependent attenuation coefficient [sec]. In this way, it is possible to obtain a change in light transmittance (beam transmittance) only for the laser emission information.

[0221] The change in the light transmittance (beam transmittance) of the liquid-repellent film is an irreversible change, and is a phenomenon that occurs when the physical properties of the liquid-repellent film are destroyed. Generally, in these phenomena, no change occurs below a certain threshold, but it is thought that (a! /, The change is small! /,), But the change becomes intense beyond the threshold. Can be For such a case, when calculating the irradiation energy QF] in the above equations (2) and (3), it is possible to adopt a method in which a pulse with a predetermined power [W] value or less is regarded as 0. good.

[0222] When the model function of Expression (2) or Expression (3) is used, for example, the selection setting of the diffractive optical elements 17a and 17b and the selection setting of the illumination system aperture stop plate 24 are set for each illumination condition. The attenuation coefficient Tp depending on the irradiation energy may be obtained in advance for each combination, and the attenuation coefficient Tp in the model function may be changed according to the illumination condition.

[0223] Also, the angle of the light beam incident on the water-repellent film varies depending on the illumination conditions, and the different angles cause different damage to the water-repellent film, resulting in a change in the light transmittance of the water-repellent film. May be different. Therefore, by replacing such angle dependence with the illumination condition, the change in the light transmittance of the water-repellent film can be calculated with higher accuracy.

[0224] In the case where the change in the amount of reflected light with the measuring reflector force is obtained by the estimation calculation, a model function that considers the change in the reflectance of chromium in addition to the change in the light transmittance of the liquid-repellent film may be used. .

[0225] In addition, the input of a model function (transfer function) for estimating the change in light transmittance of the liquid-repellent film varies with time. Any physical quantity related to the conversion may be used, for example, at least one of the number of exposure pulses and time, or the temperature may be added thereto. Also, the transfer function is not limited to the function such as the above-described equation (3). As a form of the transfer function, the first-order lag and its composite form will be common. A higher-order precise transfer function may be employed depending on the required accuracy.

[0226] Further, the description so far assumes that a model function is used when estimating a change in light transmittance of a liquid-repellent film formed on the surface of a member arranged on the image plane side of the projection optical system PL. The change in the light transmittance of the liquid-repellent film may be predicted based on information relating to the irradiation history of the light applied to the liquid-repellent film without using the force model function described above. In such a case, by acquiring information related to the irradiation history of the light applied to the liquid-repellent film at a predetermined timing, it is possible to easily predict a change in the light transmittance of the liquid-repellent film.

In the above-described embodiment, as shown in FIG. 5, the exposure area IA is irradiated, transmitted through the optical member 126, and directed to the light receiving surface of the first sensor 128. The illumination light IL (dotted line in FIG. 5) (Indicated by arrows) are partially shielded from light by the light-shielding film 127. In order to improve this point, an illuminance monitor 222 as shown in FIG. 12 may be employed in the above embodiment instead of the illuminance monitor 122 described above. The illuminance monitor 222 of FIG. 12 is different from the illuminance monitor 222 in that a light-attenuating film is provided on the upper surface of the optical member 126. Instead, a light-attenuating film 129 is formed on the entire lower surface of the optical member 126. The other points are the same as those of the illuminance monitor 122. In the illuminance monitor 222, all of the illuminating light IL (V, V shown by the dotted arrow in FIG. 12) is directed to the light receiving surface of the first sensor 128 after being irradiated to the exposure area IA and passing through the optical member 126. The light can be received by the first sensor 128 after the light is attenuated by the light attenuating film 129, and the stray light (see the thick solid line arrow in FIG. 12) that has entered the optical member 126 through the gap B portion is applied by the light attenuating film 129. It can be dimmed. Since the intensity of the stray light is much lower than that of the illumination light IA, the intensity after passing through the light attenuating film 129 becomes very small.

[0228] In each of the illuminance monitors 122 and 222, the first sensor (light receiving element) 128 is physically fixed to the lower surface (back surface) of the optical member 126, but is not limited thereto. The first sensor may be formed on the back surface of 126.

In the above embodiment, the liquid repellent (water repellent) film on the upper surface of the illuminance monitor 122 and the liquid repellent (water repellent) film on the upper surface of the measurement reflector 102 have been mainly described. M ST (measurement table MTB) aerial image measurement device with slit plate 105 and wavefront aberration measurement device with pattern plate 107 Force of light transmittance of liquid repellent (water repellent) film on the upper surface of slit plate 105 or pattern plate 107 When affected by aging, calibration may be performed in the same manner as the illuminance monitor 122 described above.

[0230] Further, for example, the extinction ratio of the extinction film 129 formed on at least one of the upper surface and the lower surface of the optical member 126 of the illuminance monitor 122 changes over time due to irradiation with an ultraviolet energy beam such as ArF excimer laser light. There are cases. Also in this case, the calibration can be performed in the same manner as the change with time of the light transmittance of the liquid-repellent (water-repellent) film.

[0231] When the reticle alignment system RAa, RAb detects a mark formed on the fiducial mark plate FM1, FM2, the liquid repellent (water repellent) formed on the upper surface of the fiducial mark plate FM1, FM2 is used. If a measurement error or the like occurs due to the influence of the temporal change in the light transmittance of the film, for example, the detection light of the reticle alignment system RAa, RAb applied to the reference mark plates FM1 and FM2 (ArF excimer laser light ), The temporal change in the light transmittance of the liquid-repellent film may be estimated based on the integrated irradiation amount and the like, and measures such as correcting the output signals of the reticle alignment systems RAa and RAb may be taken.

[0232] Further, the reflectance of a metal material film such as chromium may change over time due to irradiation with an ultraviolet energy beam such as ArF excimer laser light. Therefore, when the reference marks on the reference mark plates FM1 and FM2 are formed using a metal material (for example, chrome), the reflectance of the metal material can be determined not only by the change with time of the light transmittance of the liquid-repellent film. It is better to take measures such as correcting the output signals of the reticle alignment systems RAa and RAb in consideration of the aging of the reticle.

[0233] Note that when it is conceivable that the sensitivity of light receiving elements of various measuring instruments such as the illuminance monitor 122 may change with time, it is preferable to perform calibration in the same manner as described above.

In the above embodiment, the measuring stage MST having the measuring table MTB provided with various measuring instruments such as the illuminance monitor 122 is described in the case where the measuring stage MST is provided separately from the wafer stage WST. However, it is needless to say that the various measuring instruments described above are not limited to the above, and may be provided on the wafer stage WST. If powerful, no measurement stage is required. Further, in the above embodiment, the stage device is used for one wafer stage. Although the case where one measurement stage is provided has been described, the present invention is not limited to this, and a plurality of wafer stages for holding a wafer may be provided in order to improve the throughput of the exposure operation. Further, in the above-described embodiment, the change in the imaging performance of the projection optical system PL is compensated for by using the measurement result of the illuminance monitor 122. However, Japanese Patent Application Laid-Open No. 11-16816 and the corresponding As disclosed in US Patent Application Publication No. 2002Z0061469, the exposure amount control for the wafer W may be performed using the measurement result of the illuminance monitor 122. Also in this case, by performing calibration such that V is not affected by the liquid-repellent film (water-repellent film) or the light-reducing film, it becomes possible to accurately control the exposure amount of the wafer W. To the extent permitted by the national laws of the designated country (or selected elected country) designated in this international application, the disclosures in the above gazettes and corresponding US Patent Application Publications will be incorporated herein by reference.

The exposure apparatus to which the above-described liquid immersion method is applied has a configuration in which the optical path space on the light emission side of the terminal optical element of the projection optical system PL is filled with liquid (pure water) to expose the wafer W. However, as disclosed in International Publication WO 2004Z019128, the optical path space on the light incident side of the terminal optical element of the projection optical system PL may be filled with liquid.

[0236] In the above embodiment, the case where the configuration in which the leveling table 52 has six degrees of freedom and the measurement table MTB force S3 degree of freedom is adopted has been described. However, the present invention is not limited to this, and the leveling table 52 may have three degrees of freedom. The configuration in which the measurement table MTB has three degrees of freedom may be adopted. In addition, it is possible to adopt a configuration in which the measurement table MTB has six degrees of freedom without providing the leveling table 52.

[0237] In the above embodiment, ultrapure water (water) is used as the liquid. However, it goes without saying that the present invention is not limited to this. As the liquid, a liquid which is chemically stable and has high transmittance of the illumination light IL and which is safe, for example, a fluorine-based inert liquid may be used. As this fluorine-based inert liquid, for example, Fluorinert (trade name of Threehem, USA) can be used. This fluorine-based inert liquid is also excellent in the cooling effect. In addition, a liquid that is transparent to the illuminating light IL and has as high a refractive index as possible and that is stable against the photoresist applied to the surface of the projection optical system wafer (for example, cedar oil) should be used. Can also be used. When using the F laser as the light source, select Fomblin oil. Just do it.

[0238] In the above embodiment, the collected liquid may be reused. In this case, a filter for removing impurities from the collected liquid may be provided in the liquid collection device, the collection pipe, or the like. It is desirable to keep.

In the above embodiment, the optical element on the image plane side of the projection optical system PL is assumed to be the tip lens 91. The optical element is not limited to a lens, but is an optical element of the projection optical system PL. An optical plate (parallel plane plate or the like) used for adjusting characteristics such as aberration (spherical aberration, coma aberration, etc.) may be used, or a simple cover glass may be used. The optical element closest to the image plane of the projection optical system PL (the tip lens 91 in each of the above embodiments) is a liquid (due to scattering particles generated from the resist by irradiation of the illumination light IL or adhesion of impurities in the liquid, etc.). In the above embodiments, the surface may be soiled by contact with water. For this reason, the optical element may be detachably (exchangeably) fixed to the lowermost part of the lens barrel 40, and may be periodically replaced.

In such a case, if the optical element that comes into contact with the liquid is a lens, the cost of replacement parts is high and the time required for replacement (including adjustment) is long, resulting in maintenance costs (running costs). Increase in throughput and decrease in throughput. Therefore, the optical element that comes into contact with the liquid may be, for example, a parallel flat plate that is less expensive than the lens 91.

[0241] Further, in the above embodiment, the case where the present invention is applied to a scanning exposure apparatus such as a step 'and' scan method has been described. However, the scope of the present invention is not limited to this. It is. That is, the present invention can be applied to a step-and-repeat type projection exposure apparatus, a step-and-stitch type exposure apparatus, or a proximity type exposure apparatus.

[0242] Note that, in the above-described embodiment, the reticle using a light-transmitting mask (reticle) in which a predetermined light-shielding pattern (or a phase pattern 減 a dimming pattern) is formed on a light-transmitting substrate. Instead, for example, as disclosed in U.S. Patent No. 6,778,257, an electronic mask that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed is used. Good.

[0243] Further, as disclosed in WO 2001Z035168 pamphlet, The present invention can also be applied to an exposure apparatus (lithography system) that forms a line 'and' space pattern on the wafer W by forming the pattern on the wafer w.

[0244] The application of the exposure apparatus is not limited to the exposure apparatus for semiconductor manufacturing. For example, an exposure apparatus for liquid crystal for transferring a liquid crystal display element pattern to a square glass plate, an organic EL, a thin film magnetic head Also, it can be widely applied to exposure devices for manufacturing imaging devices (CCD, etc.), micromachines, DNA chips, and the like. In addition, glass substrates or silicon wafers are used to manufacture reticles or masks used in light exposure equipment that can be used only with micro devices such as semiconductor devices, EUV exposure equipment, X-ray exposure equipment, and electron beam exposure equipment. The present invention can also be applied to an exposure apparatus that transfers a circuit pattern to a substrate.

The light source of the exposure apparatus of the above embodiment is not limited to an ArF excimer laser, but a KrF excimer laser (output wavelength 248 nm), an F laser (output wavelength 157 nm), an Ar laser (output

twenty two

Pulse laser light source such as Kr laser (output wavelength 146 nm) and g-line (wavelength

2

It is also possible to use ultra-high pressure mercury lamps that emit bright lines such as 436 nm long and i-line (365 nm wavelength). In addition, a harmonic generation device of a YAG laser can be used. In addition, a DFB semiconductor laser or fiber laser power A single-wavelength laser beam in the infrared or visible range that is oscillated is amplified by, for example, an erbium (or both erbium and ytterbium) power S-doped fiber amplifier, and then nonlinearly amplified. It is also possible to use harmonics whose wavelength has been converted to ultraviolet light using an optical crystal. Further, the projection optical system may be not only a reduction system but also any one of an equal magnification and an enlargement system.

[0246] In the semiconductor device, a step of designing the function and performance of the device, a step of manufacturing a reticle based on this design step, a step of manufacturing a wafer from a silicon material, and the adjusting method described above. In the exposure apparatus of the above embodiment, the transfer characteristics of the pattern are adjusted by the lithography step of transferring the pattern formed on the mask onto the photosensitive object, and the device assembling step (including the dicing step, the bonding step, and the knocking step). , Manufactured through inspection steps and the like. In this case, since the exposure apparatus of the above embodiment is used in the lithography step, highly accurate exposure can be realized for a long time. Therefore, the productivity of a highly integrated microdevice on which a fine pattern is formed can be improved. Industrial applicability

The calibration method of the present invention is suitable for calibrating the output of a sensor that receives a detection beam via an optical system, a liquid, and a water-repellent film. Further, the prediction method of the present invention is suitable for predicting a change in the beam transmittance of the liquid-repellent film. Further, the exposure method of the present invention is suitable for exposing an object. Further, the reflectance calibration method of the present invention is suitable for correcting reflectance data of a reflector used for reflectance measurement of an object irradiated with an energy beam via an optical system and a liquid. Further, the reflectance measurement method of the present invention is suitable for measuring the reflectance of an object. The exposure apparatus of the present invention is suitable for exposing an object by irradiating an energy beam from a beam source through an optical system and a liquid to form a pattern on the object. Further, the device manufacturing method of the present invention is suitable for manufacturing micro devices.

Claims

The scope of the claims

[1] A calibration method for calibrating an output of a first sensor that receives a first detection beam via a liquid-repellent film on a surface of a member,

A first step of receiving a second detection beam by a second sensor without passing through a liquid-repellent film, and acquiring an output of the second sensor corresponding to an energy amount of the received beam;

A second step of receiving the first detection beam by the first sensor via the liquid-repellent film and obtaining an output of the first sensor corresponding to the energy amount of the received beam; A third step of obtaining calibration information for calibrating the output of the first sensor based on the output of the sensor and the output of the second sensor.

[2] In the calibration method according to claim 1,

A calibration method, wherein the output of the first sensor is calibrated based on the calibration information to compensate for the effect of a change in the beam transmittance of the liquid-repellent film on the output of the first sensor.

[3] In the calibration method according to claim 1,

The calibration method, wherein the processing up to the third step is performed at a timing based on information related to a change in the beam transmittance of the liquid-repellent film.

[4] The calibration method according to claim 3,

A calibration method, wherein the information relates to an integrated irradiation amount of the detection beam to the liquid repellent film.

[5] The calibration method according to claim 1,

The first sensor is disposed on the beam emission side of the optical system,

The calibration method, wherein the second sensor is disposed on a beam emission side of the optical system, and receives the second detection beam without passing through the liquid-repellent film.

[6] In the calibration method according to claim 1,

The member has a beam transmitting portion,

The calibration method, wherein the first sensor receives the first detection beam that has passed through the liquid-repellent film and the beam transmitting unit.

[7] In the calibration method according to claim 1, Until the next acquisition of the calibration information, a change in the beam transmittance of the liquid-repellent film is calculated based on a predetermined function, and the previously acquired calibration information is corrected based on the calculation result. A calibration method further comprising a fourth step.

[8] The calibration method according to claim 7,

The calibration method according to claim 1, wherein the function is an input of information regarding an irradiation history of an energy beam applied to the liquid-repellent film, and an output is a beam transmittance of the liquid-repellent film.

[9] The calibration method according to claim 1,

The first sensor is disposed on a beam emission side of an optical system, and receives at least a part of an energy beam that has passed through the optical system among the emitted energy beams as the first detection beam,

The second sensor receives, as the second detection beam, an energy beam that is branched on a beam path facing the optical system, out of the emitted energy beam. Calibration method.

[10] In the calibration method according to claim 1,

The first sensor is arranged on a beam emission side of an optical system, and receives at least a part of an energy beam emitted from a beam source and passing through the optical system as the first detection beam,

The second sensor is provided on a movable member that is movable in a plane perpendicular to a beam path of an energy beam emitted from the beam source and directed toward the optical system, and the beam source force is emitted on the beam path. And receiving at least a part of the energy beam directed to the optical system as the second detection beam.

[11] In the calibration method according to claim 1,

The calibration method, wherein the member is disposed on an image plane side of a projection optical system.

[12] An energy beam is irradiated onto an object via an optical system and a liquid in consideration of an output of the first sensor calibrated using the calibration method according to any one of claims 1 to 11. Thereby exposing the object.

[13] A device manufacturing method including a lithographic process in which an object is exposed by the exposure method according to claim 12, and a device pattern is formed on the object.

[14] A prediction method for predicting a change in beam transmittance of a liquid-repellent film formed on a surface of a member,

A prediction method including a step of predicting a change in beam transmittance of the liquid-repellent film based on information related to an irradiation history of an energy beam applied to the liquid-repellent film.

[15] The prediction method according to claim 14, wherein

In the predicting step, a change in beam transmittance of the liquid-repellent film is predicted using a predetermined function using information relating to the irradiation history of the energy beam applied to the liquid-repellent film as input information. A prediction method characterized by the following.

[16] The prediction method according to claim 14, wherein

The prediction method, wherein the information includes an integrated amount of an energy beam applied to the liquid repellent film.

[17] The prediction method according to claim 14, wherein

The energy beam applied to the liquid repellent film is a pulse light,

The prediction method, wherein the information includes an integrated number of irradiation pulses of pulsed light applied to the liquid repellent film.

[18] The prediction method according to claim 14, wherein

The prediction method, wherein the member is disposed on an image plane side of a projection optical system.

[19] In the prediction method according to any one of claims 14 to 18,

The prediction method is characterized in that the member is a measurement member arranged on a beam emission side of an optical system, and the measurement member includes at least one of a predetermined beam transmission part, a reference mark, and a reflection surface.

[20] In order to measure the reflectance of an object irradiated with the energy beam through the optical system, the reflection of a measuring reflector disposed on the beam exit side of the optical system and having a liquid-repellent film on its surface is measured. A reflectance calibration method for calibrating information related to a reflectance,

A reference reflector having no liquid-repellent film on its surface and having a predetermined reflectance is arranged on the beam exit side of the optical system, and the energy beam is applied to the reference reflector via the optical system. A first step of receiving a reflected beam from the reference reflecting plate with a sensor via the optical system and acquiring reference data; The measurement reflector is disposed on the beam exit side of the optical system, the energy beam is applied to the measurement reflector via the optical system and the liquid, and the reflected beam from the measurement reflector is reflected. Receiving the measurement data with the sensor via the liquid and the optical system, and acquiring measurement data;

A third step of calibrating information related to the reflectance of the reflection plate for measurement based on the reference data and the measurement data.

[21] The reflectance calibration method according to claim 20!

Wherein the first, second, and third steps are performed to compensate for a change in beam transmittance of a liquid-repellent film formed on the reflection plate for measurement. Method.

[22] The reflectance calibration method according to claim 20, wherein

A reflectance calibration method, wherein the optical system includes a projection optical system.

[23] The reflectance calibration method according to any one of claims 20 to 22, wherein:

A reflectance calibration method, wherein the measurement reflector includes a first reflection surface having a first reflectance and a second reflection surface having a second reflectance.

[24] A reflectivity measurement method for measuring a reflectivity of an object which is arranged on a beam emission side of an optical system and is irradiated with an energy beam through the optical system and a liquid,

A reference reflector having no liquid-repellent film on its surface and having a predetermined reflectance is arranged on the beam exit side of the optical system, and the reference beam is irradiated with the energy beam via the optical system. A first step of receiving a reflected beam from the reference reflector by a sensor via the optical system and acquiring reference data;

A liquid-repellent film is formed on the surface thereof, and a measuring reflection plate having a predetermined reflectance as a whole including the liquid-repellent film is arranged on the beam emission side of the optical system, and the measurement reflector is interposed through the optical system and the liquid. A second step of irradiating the measurement reflector with the energy beam, receiving the reflected beam from the measurement reflector through the liquid and the optical system with the sensor, and acquiring measurement data;

A third step of calibrating information related to the reflectance of the measurement reflector based on the reference data and the measurement data; The object is arranged on the beam emission side of the optical system, the energy beam is irradiated on the object via the optical system and the liquid, and the reflected beam from the object is transmitted to the liquid and the optical system. A fourth step of receiving said sensor via

A fifth step of determining the reflectance of the object based on the information related to the reflectance of the measurement reflector calibrated in the third step and the result of the fourth step. Measurement method.

[25] The reflectance measurement method according to claim 24,

In the fifth step, the reflectance of the object is calculated by a predetermined calculation using the information related to the reflectance of the measurement reflector corrected in the third step and the result of the fourth step. Is calculated.

[26] In the reflectance measuring method according to claim 24,

The reflectance measuring method, wherein the optical system includes a projection optical system.

[27] The reflectance measurement method according to any one of claims 24 to 26, wherein a reflectance of an object which is arranged on a beam emission side of an optical system and is irradiated with an energy beam through the optical system and the liquid is measured. Measuring using;

Exposing the object in consideration of the measured reflectance of the object.

[28] A device manufacturing method including a lithographic process in which an object is exposed by the exposure method according to claim 27 to form a device pattern on the object.

[29] An exposure apparatus for irradiating an energy beam from a beam source through an optical system and a liquid to expose an object and form a pattern on the object,

A first sensor for receiving a first detection beam via a liquid-repellent film on a surface of a member disposed on a beam emission side of the optical system;

A second sensor for receiving the second detection beam without passing through the liquid-repellent film;

Measurement for obtaining the output of the second sensor corresponding to the amount of the received second detection beam and obtaining the output of the first sensor corresponding to the amount of the received first detection beam A processing device;

The output of the second sensor and the output of the first sensor acquired by the measurement processing device An arithmetic unit that calculates calibration information for calibrating the output of the first sensor based on

An exposure apparatus comprising:

[30] The exposure apparatus according to claim 29,

An exposure apparatus further comprising a compensating device that compensates for a change in the beam transmittance of the liquid-repellent film by calibrating an output of the first sensor based on the calibration information.

[31] The exposure apparatus according to claim 29,

An exposure apparatus, wherein a process for calculating the calibration information by the measurement processing device and the arithmetic device is performed at a timing based on information relating to a change in beam transmittance of the liquid-repellent film.

[32] The exposure apparatus according to claim 31,

An exposure apparatus, wherein the information relates to an integrated irradiation amount of an energy beam to the liquid repellent film.

[33] The exposure apparatus according to claim 29,

An exposure apparatus, wherein the second sensor is arranged on a beam emission side of the optical system, and receives the second detection beam without passing through a liquid-repellent film.

[34] The exposure apparatus according to claim 29,

The member has a beam transmitting portion,

An exposure apparatus, wherein the first sensor receives the first detection beam that has passed through the liquid-repellent film and the beam transmitting unit.

[35] The exposure apparatus according to claim 34,

Further comprising an object stage on which the object is mounted,

An exposure apparatus, wherein the member is provided on the object stage.

[36] The exposure apparatus according to claim 34,

An object stage on which the object is placed;

An exposure apparatus, further comprising: a measurement stage provided with the member, which is different from the object stage.

[37] The exposure apparatus according to claim 29,

Until the next calculation of the calibration information by the arithmetic device is performed, the predetermined function An exposure apparatus further comprising: a correction device that calculates information related to a change in beam transmittance of the liquid-repellent film based on the calculation result, and corrects the previously calculated calibration information based on the calculation result.

[38] The exposure apparatus according to claim 37,

An illumination optical system capable of illuminating a pattern arranged on the beam incident side of the optical system with an energy beam from the beam source and changing an illumination condition for the pattern by changing a beam energy distribution on a pupil plane thereof Wherein the correction device calculates information related to a change in the beam transmittance of the liquid-repellent film using a function corresponding to an illumination condition set by the illumination optical system. Exposure equipment.

[39] The exposure apparatus according to claim 37,

The exposure apparatus according to claim 1, wherein the function receives information relating to an irradiation history of an energy beam applied to the liquid-repellent film as input and outputs a beam transmittance of the liquid-repellent film.

[40] The exposure apparatus according to claim 29,

The first sensor receives, as the first detection beam, at least a part of the energy beam that has passed through the optical system among the energy beams emitted from the beam source, and the second sensor has the beam source power An exposure apparatus, comprising: receiving, as the second detection beam, an energy beam branched out of the emitted energy beam on a beam path of the energy beam directed to the optical system from the beam source.

[41] The exposure apparatus according to claim 29,

A moving member movable in a plane perpendicular to a beam path of the energy beam emitted and directed toward the optical system.

The first sensor receives at least a part of the energy beam emitted from the beam source and passing through the optical system as the first detection beam,

The second sensor is provided on the moving member, and receives at least a part of the energy beam emitted from the beam source and directed to the optical system as a second detection beam on the beam path. An exposure apparatus characterized by the following.

[42] The exposure apparatus according to claim 29, An exposure apparatus, wherein the optical system includes a projection optical system.

[43] An exposure apparatus that irradiates an energy beam onto an object through an optical system and a liquid to expose the object,

A sensor for receiving a detection beam through a film on the surface of the member disposed on the beam exit side of the optical system;

A control device that controls an exposure operation on the object based on an output of the sensor and information related to a change in beam transmittance of the film.

[44] The exposure apparatus according to claim 43,

An exposure apparatus, wherein the film includes a liquid-repellent film.

[45] The exposure apparatus according to claim 43,

An exposure apparatus, wherein the sensor receives a detection beam via the optical system and a film on a surface of the member.

[46] The exposure apparatus according to claim 45, wherein

An exposure apparatus, wherein the sensor receives the energy beam as the detection beam.

[47] The exposure apparatus according to claim 46,

An exposure apparatus, comprising: performing an exposure amount control on the object based on a detection result of the sensor.

[48] The exposure apparatus according to claim 45, wherein

The member has a reflective surface,

An exposure apparatus, wherein the sensor receives a detection beam of the reflection surface force via the optical system.

[49] The exposure apparatus according to claim 43,

An exposure apparatus, comprising: adjusting an image formation state formed on the object based on a detection result of the sensor.

[50] The exposure apparatus according to claim 49,

An exposure apparatus, wherein the adjustment of the formation state includes an adjustment of the optical system.

[51] The exposure apparatus according to claim 43, The exposure apparatus according to claim 1, wherein the information about the change in the beam transmittance of the film includes integrated energy information of a detection beam applied to the film.

[52] The exposure apparatus according to claim 43,

The detection beam is pulsed light,

The exposure apparatus according to claim 1, wherein the information on the change in the beam transmittance of the film includes an integrated pulse number of a detection beam applied to the film.

[53] The exposure apparatus according to claim 43,

An exposure apparatus, wherein the optical system includes a projection optical system.

[54] A device manufacturing method including a lithographic step of exposing an object using the exposure apparatus according to any one of claims 29 to 53 and forming a device pattern on the object.