WO2004021398A2 - Wafer-level seal for non-silicon-based devices - Google Patents
Wafer-level seal for non-silicon-based devices Download PDFInfo
- Publication number
- WO2004021398A2 WO2004021398A2 PCT/US2003/018103 US0318103W WO2004021398A2 WO 2004021398 A2 WO2004021398 A2 WO 2004021398A2 US 0318103 W US0318103 W US 0318103W WO 2004021398 A2 WO2004021398 A2 WO 2004021398A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon
- wafer
- sacrificial material
- active area
- seal coating
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02921—Measures for preventing electric discharge due to pyroelectricity
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02984—Protection measures against damaging
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0136—Growing or depositing of a covering layer
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03791559A EP1540736A4 (en) | 2002-08-28 | 2003-06-09 | Wafer-level seal for non-silicon-based devices |
JP2004532581A JP2005537661A (en) | 2002-08-28 | 2003-06-09 | Sealing of non-silicon-based devices at the wafer stage |
AU2003243451A AU2003243451A1 (en) | 2002-08-28 | 2003-06-09 | Wafer-level seal for non-silicon-based devices |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/231,356 | 2002-08-28 | ||
US10/231,357 | 2002-08-28 | ||
US10/231,356 US6877209B1 (en) | 2002-08-28 | 2002-08-28 | Method for sealing an active area of a surface acoustic wave device on a wafer |
US10/231,357 US6846423B1 (en) | 2002-08-28 | 2002-08-28 | Wafer-level seal for non-silicon-based devices |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004021398A2 true WO2004021398A2 (en) | 2004-03-11 |
WO2004021398A3 WO2004021398A3 (en) | 2004-06-03 |
Family
ID=31980954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/018103 WO2004021398A2 (en) | 2002-08-28 | 2003-06-09 | Wafer-level seal for non-silicon-based devices |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1540736A4 (en) |
JP (1) | JP2005537661A (en) |
KR (1) | KR20050044799A (en) |
AU (1) | AU2003243451A1 (en) |
WO (1) | WO2004021398A2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005099088A1 (en) * | 2004-03-26 | 2005-10-20 | Cypress Semiconductor Corp. | Integrated circuit having one or more conductive devices formed over a saw and/or mems device |
EP2316789A1 (en) * | 2009-11-03 | 2011-05-04 | Nxp B.V. | Device with microstructure and method of forming such a device |
US9021669B2 (en) | 2006-08-07 | 2015-05-05 | Kyocera Corporation | Method for manufacturing surface acoustic wave apparatus |
US11631586B2 (en) | 2012-08-30 | 2023-04-18 | Adeia Semiconductor Bonding Technologies Inc. | Heterogeneous annealing method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020010056A1 (en) | 2018-07-03 | 2020-01-09 | Invensas Bonding Technologies, Inc. | Techniques for joining dissimilar materials in microelectronics |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5777422A (en) * | 1995-09-29 | 1998-07-07 | Sumitomo Electric Industries, Ltd. | Diamond-ZnO surface acoustic wave device having relatively thinner ZnO piezoelectric layer |
US6310420B1 (en) * | 1995-12-21 | 2001-10-30 | Siemens Aktiengesellschaft | Electronic component in particular an saw component operating with surface acoustic waves and a method for its production |
US6509623B2 (en) * | 2000-06-15 | 2003-01-21 | Newport Fab, Llc | Microelectronic air-gap structures and methods of forming the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS558191A (en) * | 1978-07-05 | 1980-01-21 | Nec Corp | Elastic surface wave device |
JPH01213018A (en) * | 1988-02-22 | 1989-08-25 | Fujitsu Ltd | Structure of surface acoustic wave device |
JPH09172339A (en) * | 1995-12-19 | 1997-06-30 | Kokusai Electric Co Ltd | Surface acoustic wave device and manufacture of the same |
JP2000114918A (en) * | 1998-10-05 | 2000-04-21 | Mitsubishi Electric Corp | Surface acoustic wave device and its manufacture |
JP2001053178A (en) * | 1999-06-02 | 2001-02-23 | Japan Radio Co Ltd | Electronic component with electronic circuit device sealed and mounted on circuit board, and manufacture of the electronic component |
DE69933380T2 (en) * | 1999-12-15 | 2007-08-02 | Asulab S.A. | Method for hermetically encapsulating microsystems on site |
-
2003
- 2003-06-09 AU AU2003243451A patent/AU2003243451A1/en not_active Abandoned
- 2003-06-09 KR KR1020057003297A patent/KR20050044799A/en not_active Application Discontinuation
- 2003-06-09 JP JP2004532581A patent/JP2005537661A/en active Pending
- 2003-06-09 EP EP03791559A patent/EP1540736A4/en not_active Withdrawn
- 2003-06-09 WO PCT/US2003/018103 patent/WO2004021398A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5777422A (en) * | 1995-09-29 | 1998-07-07 | Sumitomo Electric Industries, Ltd. | Diamond-ZnO surface acoustic wave device having relatively thinner ZnO piezoelectric layer |
US6310420B1 (en) * | 1995-12-21 | 2001-10-30 | Siemens Aktiengesellschaft | Electronic component in particular an saw component operating with surface acoustic waves and a method for its production |
US6509623B2 (en) * | 2000-06-15 | 2003-01-21 | Newport Fab, Llc | Microelectronic air-gap structures and methods of forming the same |
Non-Patent Citations (1)
Title |
---|
See also references of EP1540736A2 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005099088A1 (en) * | 2004-03-26 | 2005-10-20 | Cypress Semiconductor Corp. | Integrated circuit having one or more conductive devices formed over a saw and/or mems device |
US7750420B2 (en) | 2004-03-26 | 2010-07-06 | Cypress Semiconductor Corporation | Integrated circuit having one or more conductive devices formed over a SAW and/or MEMS device |
US9021669B2 (en) | 2006-08-07 | 2015-05-05 | Kyocera Corporation | Method for manufacturing surface acoustic wave apparatus |
US9882540B2 (en) | 2006-08-07 | 2018-01-30 | Kyocera Corporation | Method for manufacturing surface acoustic wave apparatus |
EP2316789A1 (en) * | 2009-11-03 | 2011-05-04 | Nxp B.V. | Device with microstructure and method of forming such a device |
CN102050417A (en) * | 2009-11-03 | 2011-05-11 | Nxp股份有限公司 | Device with microstructure and method of forming such a device |
CN102050417B (en) * | 2009-11-03 | 2012-07-25 | Nxp股份有限公司 | Device with microstructure and method of forming such a device |
US8426928B2 (en) | 2009-11-03 | 2013-04-23 | Nxp B.V. | Device with microstructure and method of forming such a device |
US11631586B2 (en) | 2012-08-30 | 2023-04-18 | Adeia Semiconductor Bonding Technologies Inc. | Heterogeneous annealing method |
Also Published As
Publication number | Publication date |
---|---|
JP2005537661A (en) | 2005-12-08 |
AU2003243451A8 (en) | 2004-03-19 |
AU2003243451A1 (en) | 2004-03-19 |
EP1540736A4 (en) | 2006-03-08 |
KR20050044799A (en) | 2005-05-12 |
EP1540736A2 (en) | 2005-06-15 |
WO2004021398A3 (en) | 2004-06-03 |
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