US20180269349A1 - Nitride semiconductor structure - Google Patents
Nitride semiconductor structure Download PDFInfo
- Publication number
- US20180269349A1 US20180269349A1 US15/981,864 US201815981864A US2018269349A1 US 20180269349 A1 US20180269349 A1 US 20180269349A1 US 201815981864 A US201815981864 A US 201815981864A US 2018269349 A1 US2018269349 A1 US 2018269349A1
- Authority
- US
- United States
- Prior art keywords
- layer
- type
- light emitting
- doped semiconductor
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 95
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims description 17
- 230000000903 blocking effect Effects 0.000 claims description 15
- 229910002704 AlGaN Inorganic materials 0.000 claims description 13
- 239000002019 doping agent Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 description 12
- 230000008901 benefit Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002259 gallium compounds Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
Definitions
- the present invention relates to a nitride semiconductor structure and a semiconductor light emitting device including the same, especially to a nitride semiconductor structure that has a multiple quantum well structure formed by quaternary AlGaInN barrier layers and ternary InGaN well layers for reducing stress coming from lattice mismatch.
- the thickness of the well layer is ranging from 3.5 nm to 7 nm.
- a better carrier confinement is provided and the internal quantum efficiency is improved.
- the semiconductor light emitting device has a better light emitting efficiency.
- a nitride light emitting diode is produced by forming a buffer layer on a substrate first. Then a n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are formed on the buffer layer in turn by epitaxial growth. Next use photolithography and etching processes to remove a part of the p-type semiconductor layer and a part of the light emitting layer until a part of the n-type semiconductor layer is exposed. Later a n-type electrode and a p-type electrode are respectively formed on the exposed n-type semiconductor layer and the p-type semiconductor layer. Thus, a light emitting diode device is produced.
- the light emitting layer has a multiple quantum well (MQW) structure formed by a plurality of well layers and barrier layers disposed alternately.
- the band gap of the well layer is lower than that of the barrier layer so that electrons and holes are confined by each well layer of the MQW structure.
- electrons and holes are respectively injected from the n-type semiconductor layer and the p-type semiconductor layer to be combined with each other in the well layers and photons are emitted.
- the MQW structure there are about 1-30 layers of well layers or barrier layers.
- the barrier layer is usually made of GaN while the well layer is made of InGaN.
- a piezoelectric field is induced in the MQW structure by the stress.
- the higher indium composition the larger the piezoelectric field generated.
- the piezoelectric field has a greater impact on the crystal structure.
- the stress accumulated is getting larger along with the increasing thickness during growth of InGaN. After the crystal structure being grown over a critical thickness, larger defects (such as V-pits) are present due to the stress, so that the thickness of the well layer has a certain limit, generally about 3 nm.
- band gap is tilted or twisted due to effects of a strong polarization field.
- electrons and holes are separated and confined on opposite sides of the well layer, which leads to decrease the overlapping of the wave function of the electron hole pairs and further to reduce both radiative recombination rate and internal quantum efficiency of electron hole pairs.
- a nitride semiconductor structure comprising a first type doped semiconductor layer; a light emitting layer, comprising a multiple quantum well (MQW) structure; an AlGaN based second type carrier blocking layer; and a second type doped semiconductor layer, wherein the AlGaN based second type carrier blocking layer is disposed between the second type doped semiconductor layer and the light emitting layer, and the light emitting layer is disposed between the AlGaN based second type carrier blocking layer and the first type doped semiconductor layer, and the MQW structure comprises a plurality of AlInGaN based barrier layers and a plurality of InGaN based well layers stacked alternately.
- MQW multiple quantum well
- a nitride semiconductor structure comprising: a first type doped semiconductor layer; a light emitting layer, comprising a multiple quantum well (MQW) structure; a InGaN based hole supply layer; and a second type doped semiconductor layer, wherein the light emitting layer is disposed between the first type doped semiconductor layer and the InGaN based hole supply layer, and the InGaN based hole supply layer is disposed between the light emitting layer and the second type doped semiconductor layer, and the MQW structure comprises a plurality of AlInGaN based barrier layers and a plurality of InGaN based well layers stacked alternately, and the band gap of the hole supply layer is larger than that of the InGaN based well layers.
- MQW multiple quantum well
- a nitride semiconductor structure comprising: a first type doped semiconductor layer; a AlGaN based first type carrier blocking layer; a light emitting layer, comprising a multiple quantum well (MQW) structure; a AlGaN based second type carrier blocking layer; and a second type doped semiconductor layer, wherein the light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer, the AlGaN based first type carrier blocking layer is disposed between the first type doped semiconductor layer and the light emitting layer, the AlGaN based second type carrier blocking layer is disposed between the second type doped semiconductor layer and the light emitting layer, and the MQW structure comprises a plurality of AlInGaN based barrier layers and a plurality of InGaN based well layers stacked alternately.
- MQW multiple quantum well
- the semiconductor light emitting device gets a better light emitting efficiency.
- FIG. 1 is a schematic drawing showing a cross section of an embodiment of a nitride semiconductor structure according to the present invention
- FIG. 2 is a schematic drawing showing a cross section of an embodiment of a semiconductor light emitting device including a nitride semiconductor structure according to the present invention.
- a layer of something or a structure is disposed over or under a substrate, another layer of something, or another structure, that means the two structures, the layers of something, the layer of something and the substrate, or the structure and the substrate can be directly or indirectly connected.
- a first type doped semiconductor layer 3 and a second type doped semiconductor layer 7 are disposed over a substrate 1 .
- a light emitting layer 5 is disposed between the first type doped semiconductor layer 3 and the second type doped semiconductor layer 7 .
- the light emitting layer 5 has a multiple quantum well (MQW) structure.
- the MQW structure includes a plurality of well layers 51 and barrier layers 52 stacked alternately.
- One well layer 51 is disposed between every two barrier layers 52 .
- the barrier layer 52 is made of quaternary AlxInyGa1 ⁇ x ⁇ yN (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1) and the well layer 51 is made of material In z Ga 1 ⁇ z N (0 ⁇ z ⁇ 1).
- the thickness of the well layer 51 is ranging from 3.5 nm to 7 nm, preferably from 4 nm to 5 nm.
- the thickness of the barrier layer 52 is ranging from 5 nm to 12 nm.
- the barrier layer 52 is doped with a first type dopant (such as silicon or germanium) at a concentration ranging from 10 16 cm ⁇ 3 to 10 18 cm ⁇ 3 so as to reduce carrier screening effect and increase carrier-confinement.
- a hole supply layer 8 is disposed between the light emitting layer 5 and the second type doped semiconductor layer 7 .
- the hole supply layer 8 is made of In x Ga 1 ⁇ x N (0 ⁇ x ⁇ 1) and is doped with a second type dopant (such as magnesium or zinc) at a concentration larger than 10 18 cm ⁇ 3 .
- the hole supply layer 8 is also doped with a Group IV A element whose concentration is ranging from 10 17 cm ⁇ 3 to 10 20 cm ⁇ 3 .
- the optimal Group IV A element is carbon.
- the pentavalent nitrogen is replaced by carbon, so that the hole supply layer 8 has higher concentration of holes and more holes are provided to enter the light emitting layer 5 .
- the band gap of the hole supply layer 8 is larger than that of the well layer 51 of MQW structure, so that the holes are allowed to enter the well layers and the electrons will not escape into the second type doped semiconductor layer 7 .
- a first type carrier blocking layer 4 made of material Al x Ga 1 ⁇ x N (0 ⁇ x ⁇ 1) is disposed between the light emitting layer 5 and the first type doped semiconductor layer 3 while a second type carrier blocking layer 6 made of Al x Ga 1 ⁇ x N (0 ⁇ x ⁇ 1) is disposed between the hole supply layer 8 and the second type doped semiconductor layer 7 . Due to the property that the band gap of AlGaN containing aluminum is larger than that of the GaN, not only the range of band gap of the nitride semiconductor is increased, the carriers are confined in the MQW structure. Thus the electron-hole recombination rate is increased and the light emitting efficiency is improved.
- a buffer layer 2 made of Al x Ga 1 ⁇ x N (0 ⁇ x ⁇ 1) is disposed between the substrate 1 and the first type doped semiconductor layer 3 .
- the buffer layer 2 is for improving lattice mismatch caused by the first type doped semiconductor layer 3 grown on the heterogeneous substrate 1 .
- the materials for the buffer layer 2 can also be GaN, InGaN, SiC, ZnO, etc.
- the buffer layer is produced by a low-temperature epitaxial growth at the temperature ranging from 400 degrees Celsius (° C.) to 900° C.
- the material for the substrate 1 can be sapphire, silicon, SiC, ZnO or GaN, etc.
- the first type doped semiconductor layer 3 is made of Si-doped or Ge-doped GaN-based materials while the second type doped semiconductor layer 7 is made of Mg-doped or Zn-doped GaN-based materials.
- the first type doped semiconductor layer 3 and the second type doped semiconductor layer 7 are produced by the method such as metalorganic chemical vapor deposition (MOCVD).
- MOCVD metalorganic chemical vapor deposition
- the well layer 51 and the barrier layer 52 they are produced by metal organic chemical vapor deposition or molecular beam epitaxy (MBE) deposition of gas mixture of a lower alkyl group-indium and gallium compound.
- MBE molecular beam epitaxy
- the barrier layers 52 are deposited at the temperature ranging from 850° C. to 1000° C. while the well layers 51 are formed at the temperature ranging from 500° C. to 950° C.
- the AlGaInN barrier layers 52 and the InGaN well layers 51 of the MQW structure have the same element-indium so that the lattice constant of the barrier layers 52 and the lattice constant of the well layers 51 are similar.
- the thickness of the well layer 51 of the nitride semiconductor structure is ranging from 3.5 nm to 7 nm, preferably from 4 nm to 5 nm.
- the piezoelectric field in the MQW structure is effectively reduced because that the quaternary AlGaInN barrier layers 52 and InGaN well layers 51 can improve the stress caused by lattice mismatch.
- the tilted and twisted energy band is improved in a certain degree. Therefore the piezoelectric effect is reduced effectively and the internal quantum efficiency is increased.
- the above nitride semiconductor structure is applied to semiconductor light emitting devices.
- FIG. 2 a cross section of a semiconductor light emitting device including the nitride semiconductor structure of an embodiment according to the present invention is revealed.
- the semiconductor light emitting device includes at least: a substrate 1 , a first type doped semiconductor layer 3 disposed over the substrate 1 and made of Si-doped or Ge-doped GaN based materials, a light emitting layer 5 disposed over the first type doped semiconductor layer 3 and having a multiple quantum well (MQW) structure, a second type doped semiconductor layer 7 disposed over the light emitting layer 5 and made of Mg-doped or Zn-doped GaN based materials, a first type electrode 31 disposed on and in ohmic contact with the first type doped semiconductor layer 3 , and a second type electrode 71 disposed on and in ohmic contact with the second type doped semiconductor layer 7 .
- MQW multiple quantum well
- the MQW structure includes a plurality of well layers 51 and barrier layers 52 stacked alternately.
- One well layer 51 is disposed between every two barrier layers 52 .
- the barrier layer 52 is made of material Al x In y Ga 1 ⁇ x ⁇ y N and x and y satisfy the conditions: 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, and 0 ⁇ x+y ⁇ 1 while the well layer 51 is made of material In z Ga 1 ⁇ z N and 0 ⁇ z ⁇ 1.
- the thickness of the well layer 51 is ranging from 3.5 nm to 7 nm, preferably from 4 nm to 5 nm.
- the first type electrode 31 and the second type electrode 71 are used together to provide electric power and are made of (but not limited to) the following materials: titanium, aluminum, gold, chromium, nickel, platinum, and their alloys.
- the manufacturing processes are well-known to people skilled in the art.
- a first type carrier blocking layer 4 made of material Al x Ga 1 ⁇ x N (0 ⁇ x ⁇ 1) is disposed between the light emitting layer 5 and the first type doped semiconductor layer 3 while a second type carrier blocking layer 6 made of material Al x Ga 1 ⁇ x N (0 ⁇ x ⁇ 1) is disposed between the light emitting layer 5 and the second type doped semiconductor layer 7 . Due to the property that the band gap of AlGaN containing aluminum is larger than that of GaN, not only the range of the band gap of the nitride semiconductor is increased, the carriers are also confined in the MQW structure. Thus the electron-hole recombination rate is increased and the light emitting efficiency is further improved.
- a buffer layer 2 made of Al x Ga 1 ⁇ x N (0 ⁇ x ⁇ 1) is disposed between the substrate 1 and the first type doped semiconductor layer 3 so as to improve lattice constant mismatch caused by the first type doped semiconductor layer 3 grown on the heterogeneous substrate 1 .
- the buffer layer 2 can also be made of material including GaN, InGaN, SiC, ZnO, etc.
- the quaternary composition of the semiconductor light emitting device of the present invention can be adjusted and improved for providing a lattice matching composition that allows the barrier layers 52 and the well layers 51 to have similar lattice constants.
- the thickness of the well layer 51 of the nitride semiconductor structure is ranging from 5 nm to 7 nm, preferably from 4 nm to 5 nm.
- the addition of more aluminum (Al) in the barrier layer 52 provides a better carrier confinement and electrons and holes are effectively confined in the well layer 51 . Thereby the internal quantum efficiency is increased and the semiconductor light emitting device provides a better light emitting efficiency.
- the quaternary AlGaInN barrier layers and the ternary InGaN well layers can improve the stress caused by lattice mismatch and further reduce the piezoelectric field in the MQW structure effectively.
- the piezoelectric effect is inhibited and the internal quantum efficiency is improved. Therefore, the semiconductor light emitting device gets a better light emitting efficiency.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AxInyGa1−x−yN (0<x<1, 0<y<1, 0<x+y<1) while the well layer is made of InzGa1−zN (0<z<1). Thereby quaternary composition is adjusted for lattice match between the barrier layers and the well layers. Thus crystal defect caused by lattice mismatch is improved.
Description
- This is a continuation application of and claims the priority benefit of U.S. application Ser. No. 15/499,913, filed on Apr. 28, 2017, now pending. The prior U.S. application Ser. No. 15/499,913 is a continuation application of and claims the priority benefit of U.S. application Ser. No. 14/732,798, filed on Jun. 8, 2015, now patented. The prior U.S. application Ser. No. 14/732,798 is a continuation application of and claims the priority benefit of U.S. application Ser. No. 13/963,109, filed on Aug. 9, 2013, now patented, which claims the priority benefit of Taiwan application serial no. 101143101, filed on Nov. 19, 2012. The entirety of each of the above-mentioned patent applications is hereby incorporated by reference herein and made a part of this specification.
- The present invention relates to a nitride semiconductor structure and a semiconductor light emitting device including the same, especially to a nitride semiconductor structure that has a multiple quantum well structure formed by quaternary AlGaInN barrier layers and ternary InGaN well layers for reducing stress coming from lattice mismatch. The thickness of the well layer is ranging from 3.5 nm to 7 nm. At the same time, a better carrier confinement is provided and the internal quantum efficiency is improved. Thus the semiconductor light emitting device has a better light emitting efficiency.
- Generally, a nitride light emitting diode is produced by forming a buffer layer on a substrate first. Then a n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are formed on the buffer layer in turn by epitaxial growth. Next use photolithography and etching processes to remove a part of the p-type semiconductor layer and a part of the light emitting layer until a part of the n-type semiconductor layer is exposed. Later a n-type electrode and a p-type electrode are respectively formed on the exposed n-type semiconductor layer and the p-type semiconductor layer. Thus, a light emitting diode device is produced. The light emitting layer has a multiple quantum well (MQW) structure formed by a plurality of well layers and barrier layers disposed alternately. The band gap of the well layer is lower than that of the barrier layer so that electrons and holes are confined by each well layer of the MQW structure. Thus electrons and holes are respectively injected from the n-type semiconductor layer and the p-type semiconductor layer to be combined with each other in the well layers and photons are emitted.
- In the MQW structure, there are about 1-30 layers of well layers or barrier layers. The barrier layer is usually made of GaN while the well layer is made of InGaN. However, there is about 10˜15% lattice mismatch between GaN and InGaN that causes a large stress in the lattice. Thus a piezoelectric field is induced in the MQW structure by the stress. Moreover, during growth of InGaN, the higher indium composition, the larger the piezoelectric field generated. The piezoelectric field has a greater impact on the crystal structure. The stress accumulated is getting larger along with the increasing thickness during growth of InGaN. After the crystal structure being grown over a critical thickness, larger defects (such as V-pits) are present due to the stress, so that the thickness of the well layer has a certain limit, generally about 3 nm.
- Moreover, in the MQW structure, band gap is tilted or twisted due to effects of a strong polarization field. Thus electrons and holes are separated and confined on opposite sides of the well layer, which leads to decrease the overlapping of the wave function of the electron hole pairs and further to reduce both radiative recombination rate and internal quantum efficiency of electron hole pairs.
- A nitride semiconductor structure comprising a first type doped semiconductor layer; a light emitting layer, comprising a multiple quantum well (MQW) structure; an AlGaN based second type carrier blocking layer; and a second type doped semiconductor layer, wherein the AlGaN based second type carrier blocking layer is disposed between the second type doped semiconductor layer and the light emitting layer, and the light emitting layer is disposed between the AlGaN based second type carrier blocking layer and the first type doped semiconductor layer, and the MQW structure comprises a plurality of AlInGaN based barrier layers and a plurality of InGaN based well layers stacked alternately.
- A nitride semiconductor structure comprising: a first type doped semiconductor layer; a light emitting layer, comprising a multiple quantum well (MQW) structure; a InGaN based hole supply layer; and a second type doped semiconductor layer, wherein the light emitting layer is disposed between the first type doped semiconductor layer and the InGaN based hole supply layer, and the InGaN based hole supply layer is disposed between the light emitting layer and the second type doped semiconductor layer, and the MQW structure comprises a plurality of AlInGaN based barrier layers and a plurality of InGaN based well layers stacked alternately, and the band gap of the hole supply layer is larger than that of the InGaN based well layers.
- A nitride semiconductor structure comprising: a first type doped semiconductor layer; a AlGaN based first type carrier blocking layer; a light emitting layer, comprising a multiple quantum well (MQW) structure; a AlGaN based second type carrier blocking layer; and a second type doped semiconductor layer, wherein the light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer, the AlGaN based first type carrier blocking layer is disposed between the first type doped semiconductor layer and the light emitting layer, the AlGaN based second type carrier blocking layer is disposed between the second type doped semiconductor layer and the light emitting layer, and the MQW structure comprises a plurality of AlInGaN based barrier layers and a plurality of InGaN based well layers stacked alternately.
- By the quaternary AlGaInN barrier layers and the ternary InGaN well layers, the stress caused by lattice mismatch is improved and the piezoelectric field in the MQW structure is further reduced effectively. Thus inhibition of the piezoelectric effect and improvement of internal quantum efficiency are achieved. Therefore the semiconductor light emitting device gets a better light emitting efficiency.
- The structure and the technical means adopted by the present invention to achieve the above and other objects can be best understood by referring to the following detailed description of the preferred embodiments and the accompanying drawings, wherein
-
FIG. 1 is a schematic drawing showing a cross section of an embodiment of a nitride semiconductor structure according to the present invention; -
FIG. 2 is a schematic drawing showing a cross section of an embodiment of a semiconductor light emitting device including a nitride semiconductor structure according to the present invention. - In the following embodiments, when it is mentioned that a layer of something or a structure is disposed over or under a substrate, another layer of something, or another structure, that means the two structures, the layers of something, the layer of something and the substrate, or the structure and the substrate can be directly or indirectly connected. The indirect connection means there is at least one intermediate layer disposed therebetween.
- Referring to
FIG. 1 , a first type dopedsemiconductor layer 3 and a second type dopedsemiconductor layer 7 are disposed over asubstrate 1. Alight emitting layer 5 is disposed between the first type dopedsemiconductor layer 3 and the second type dopedsemiconductor layer 7. Thelight emitting layer 5 has a multiple quantum well (MQW) structure. The MQW structure includes a plurality ofwell layers 51 andbarrier layers 52 stacked alternately. Onewell layer 51 is disposed between every twobarrier layers 52. Thebarrier layer 52 is made of quaternary AlxInyGa1−x−yN (0<x<1, 0<y<1, 0<x+y<1) and thewell layer 51 is made of material InzGa1−zN (0<z<1). The thickness of thewell layer 51 is ranging from 3.5 nm to 7 nm, preferably from 4 nm to 5 nm. The thickness of thebarrier layer 52 is ranging from 5 nm to 12 nm. Thebarrier layer 52 is doped with a first type dopant (such as silicon or germanium) at a concentration ranging from 1016 cm−3 to 1018 cm−3 so as to reduce carrier screening effect and increase carrier-confinement. - Moreover, a
hole supply layer 8 is disposed between thelight emitting layer 5 and the second type dopedsemiconductor layer 7. Thehole supply layer 8 is made of InxGa1−xN (0<x<1) and is doped with a second type dopant (such as magnesium or zinc) at a concentration larger than 1018 cm −3. Thehole supply layer 8 is also doped with a Group IV A element whose concentration is ranging from 1017 cm−3 to 1020 cm −3. The optimal Group IV A element is carbon. The pentavalent nitrogen is replaced by carbon, so that thehole supply layer 8 has higher concentration of holes and more holes are provided to enter thelight emitting layer 5. Thus the electron-hole recombination is increased. The band gap of thehole supply layer 8 is larger than that of thewell layer 51 of MQW structure, so that the holes are allowed to enter the well layers and the electrons will not escape into the second type dopedsemiconductor layer 7. - Furthermore, a first type
carrier blocking layer 4 made of material AlxGa1−xN (0<x<1) is disposed between the light emittinglayer 5 and the first type dopedsemiconductor layer 3 while a second typecarrier blocking layer 6 made of AlxGa1−xN (0<x<1) is disposed between thehole supply layer 8 and the second type dopedsemiconductor layer 7. Due to the property that the band gap of AlGaN containing aluminum is larger than that of the GaN, not only the range of band gap of the nitride semiconductor is increased, the carriers are confined in the MQW structure. Thus the electron-hole recombination rate is increased and the light emitting efficiency is improved. - In addition, a
buffer layer 2 made of AlxGa1−xN (0<x<1) is disposed between thesubstrate 1 and the first type dopedsemiconductor layer 3. Thebuffer layer 2 is for improving lattice mismatch caused by the first type dopedsemiconductor layer 3 grown on theheterogeneous substrate 1. The materials for thebuffer layer 2 can also be GaN, InGaN, SiC, ZnO, etc. The buffer layer is produced by a low-temperature epitaxial growth at the temperature ranging from 400 degrees Celsius (° C.) to 900° C. - While in use, the material for the
substrate 1 can be sapphire, silicon, SiC, ZnO or GaN, etc. The first type dopedsemiconductor layer 3 is made of Si-doped or Ge-doped GaN-based materials while the second type dopedsemiconductor layer 7 is made of Mg-doped or Zn-doped GaN-based materials. The first type dopedsemiconductor layer 3 and the second type dopedsemiconductor layer 7 are produced by the method such as metalorganic chemical vapor deposition (MOCVD). As to thewell layer 51 and thebarrier layer 52, they are produced by metal organic chemical vapor deposition or molecular beam epitaxy (MBE) deposition of gas mixture of a lower alkyl group-indium and gallium compound. The barrier layers 52 are deposited at the temperature ranging from 850° C. to 1000° C. while the well layers 51 are formed at the temperature ranging from 500° C. to 950° C. The AlGaInN barrier layers 52 and the InGaN well layers 51 of the MQW structure have the same element-indium so that the lattice constant of the barrier layers 52 and the lattice constant of the well layers 51 are similar. Thus not only crystal defects caused by lattice mismatch between conventional InGaN well layers and GaN barrier layers can be improved, the stress caused by lattice constant mismatch between materials is also improved. The thickness of thewell layer 51 of the nitride semiconductor structure is ranging from 3.5 nm to 7 nm, preferably from 4 nm to 5 nm. - Moreover, the piezoelectric field in the MQW structure is effectively reduced because that the quaternary AlGaInN barrier layers 52 and InGaN well layers 51 can improve the stress caused by lattice mismatch. Thus the tilted and twisted energy band is improved in a certain degree. Therefore the piezoelectric effect is reduced effectively and the internal quantum efficiency is increased.
- The above nitride semiconductor structure is applied to semiconductor light emitting devices. Referring to
FIG. 2 , a cross section of a semiconductor light emitting device including the nitride semiconductor structure of an embodiment according to the present invention is revealed. The semiconductor light emitting device includes at least: asubstrate 1, a first type dopedsemiconductor layer 3 disposed over thesubstrate 1 and made of Si-doped or Ge-doped GaN based materials, alight emitting layer 5 disposed over the first type dopedsemiconductor layer 3 and having a multiple quantum well (MQW) structure, a second type dopedsemiconductor layer 7 disposed over thelight emitting layer 5 and made of Mg-doped or Zn-doped GaN based materials, afirst type electrode 31 disposed on and in ohmic contact with the first type dopedsemiconductor layer 3, and asecond type electrode 71 disposed on and in ohmic contact with the second type dopedsemiconductor layer 7. - The MQW structure includes a plurality of well layers 51 and barrier layers 52 stacked alternately. One
well layer 51 is disposed between every two barrier layers 52. Thebarrier layer 52 is made of material AlxInyGa1−x−yN and x and y satisfy the conditions: 0<x<1, 0<y<1, and 0<x+y<1 while thewell layer 51 is made of material InzGa1−zN and 0<z<1. The thickness of thewell layer 51 is ranging from 3.5 nm to 7 nm, preferably from 4 nm to 5 nm. - The
first type electrode 31 and thesecond type electrode 71 are used together to provide electric power and are made of (but not limited to) the following materials: titanium, aluminum, gold, chromium, nickel, platinum, and their alloys. The manufacturing processes are well-known to people skilled in the art. - Moreover, a first type
carrier blocking layer 4 made of material AlxGa1−xN (0<x<1) is disposed between the light emittinglayer 5 and the first type dopedsemiconductor layer 3 while a second typecarrier blocking layer 6 made of material AlxGa1−xN (0<x<1) is disposed between the light emittinglayer 5 and the second type dopedsemiconductor layer 7. Due to the property that the band gap of AlGaN containing aluminum is larger than that of GaN, not only the range of the band gap of the nitride semiconductor is increased, the carriers are also confined in the MQW structure. Thus the electron-hole recombination rate is increased and the light emitting efficiency is further improved. - A
buffer layer 2 made of AlxGa1−xN (0<x<1) is disposed between thesubstrate 1 and the first type dopedsemiconductor layer 3 so as to improve lattice constant mismatch caused by the first type dopedsemiconductor layer 3 grown on theheterogeneous substrate 1. Thebuffer layer 2 can also be made of material including GaN, InGaN, SiC, ZnO, etc. - In summary, due to that both quaternary AlGaInN barrier layers 52 and ternary InGaN well layers 51 have the same element-indium, the quaternary composition of the semiconductor light emitting device of the present invention can be adjusted and improved for providing a lattice matching composition that allows the barrier layers 52 and the well layers 51 to have similar lattice constants. Thus not only crystal defects caused by lattice mismatch between conventional InGaN well layers and GaN barrier layers can be improved, the stress caused by lattice mismatch is also improved. The thickness of the
well layer 51 of the nitride semiconductor structure is ranging from 5 nm to 7 nm, preferably from 4 nm to 5 nm. Moreover, the addition of more aluminum (Al) in thebarrier layer 52 provides a better carrier confinement and electrons and holes are effectively confined in thewell layer 51. Thereby the internal quantum efficiency is increased and the semiconductor light emitting device provides a better light emitting efficiency. - Furthermore, the quaternary AlGaInN barrier layers and the ternary InGaN well layers can improve the stress caused by lattice mismatch and further reduce the piezoelectric field in the MQW structure effectively. Thus the piezoelectric effect is inhibited and the internal quantum efficiency is improved. Therefore, the semiconductor light emitting device gets a better light emitting efficiency.
- Additional advantages and modifications will readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details, and representative devices shown and described herein. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.
Claims (9)
1. A nitride semiconductor structure comprising:
a first type doped semiconductor layer;
a second type doped semiconductor layer;
a light emitting layer disposed between the second type doped semiconductor layer and the first type doped semiconductor layer, the light emitting layer comprising a multiple quantum well (MQW) structure, wherein the MQW structure comprises a plurality of barrier layers and a plurality of well layers stacked alternately;
an InGaN based second type hole supply layer disposed between the second type doped semiconductor layer and the light emitting layer; and
an AlGaN based second type carrier blocking layer disposed between the second type doped semiconductor layer and the light emitting layer,
wherein the InGaN based second type hole supply layer is doped with a second type dopant at a concentration larger than 1018 cm−3 and carbon at a concentration between 1017 cm−3 and 1020 cm−3.
2. The nitride semiconductor structure as claimed in claim 1 , wherein a material of each of the barrier layers of the MQW structure is doped with a first type dopant at a concentration ranging from 1016 cm−3 to 1018 cm−3.
3. The nitride semiconductor structure as claimed in claim 1 , wherein a band gap of the InGaN based second type hole supply layer is larger than a band gap of each of the well layers of the MQW structure.
4. The nitride semiconductor structure as claimed in claim 1 , wherein the second type dopant in the InGaN based second type hole supply layer is magnesium.
5. The nitride semiconductor structure as claimed in claim 1 , further comprising:
an AlGaN based first type carrier blocking layer, disposed between the first type doped semiconductor layer and the light emitting layer.
6. A nitride semiconductor structure comprising:
a first type doped semiconductor layer;
a second type doped semiconductor layer;
a light emitting layer disposed between the second type doped semiconductor layer and the first type doped semiconductor layer, the light emitting layer comprising a multiple quantum well (MQW) structure, wherein the MQW structure comprises a plurality of barrier layers and a plurality of well layers stacked alternately;
an InGaN based second type hole supply layer disposed between the second type doped semiconductor layer and the light emitting layer;
an AlGaN based first type carrier blocking layer disposed between the first type doped semiconductor layer and the light emitting layer; and
an AlGaN based second type carrier blocking layer disposed between the second type doped semiconductor layer and the InGaN based second type hole supply layer,
wherein the InGaN based second type hole supply layer is doped with a second type dopant at a concentration larger than 1018 cm−3 and carbon at a concentration between 1017 cm−3 and 1020 cm−3.
7. The nitride semiconductor structure as claimed in claim 6 , wherein a material of each of the barrier layers of the MQW structure is doped with a first type dopant at a concentration is ranging from 1016 cm−3 to 1018 cm−3.
8. The nitride semiconductor structure as claimed in claim 6 , wherein a band gap of the InGaN based second type hole supply layer is larger than a band gap of each of the well layers of the MQW structure.
9. The nitride semiconductor structure as claimed in claim 6 , wherein the second type dopant in the InGaN based second type hole supply layer is magnesium.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/981,864 US20180269349A1 (en) | 2012-11-19 | 2018-05-16 | Nitride semiconductor structure |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101143101 | 2012-11-19 | ||
TW101143101A TWI499080B (en) | 2012-11-19 | 2012-11-19 | Nitride semiconductor structure and semiconductor light-emitting element |
US13/963,109 US9076912B2 (en) | 2012-11-19 | 2013-08-09 | Nitride semiconductor structure and semiconductor light emitting device including the same |
US14/732,798 US9640712B2 (en) | 2012-11-19 | 2015-06-08 | Nitride semiconductor structure and semiconductor light emitting device including the same |
US15/499,913 US20170256673A1 (en) | 2012-11-19 | 2017-04-28 | Nitride semiconductor structure |
US15/981,864 US20180269349A1 (en) | 2012-11-19 | 2018-05-16 | Nitride semiconductor structure |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/499,913 Continuation US20170256673A1 (en) | 2012-11-19 | 2017-04-28 | Nitride semiconductor structure |
Publications (1)
Publication Number | Publication Date |
---|---|
US20180269349A1 true US20180269349A1 (en) | 2018-09-20 |
Family
ID=50727077
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/963,109 Expired - Fee Related US9076912B2 (en) | 2012-11-19 | 2013-08-09 | Nitride semiconductor structure and semiconductor light emitting device including the same |
US14/732,798 Active US9640712B2 (en) | 2012-11-19 | 2015-06-08 | Nitride semiconductor structure and semiconductor light emitting device including the same |
US15/499,913 Abandoned US20170256673A1 (en) | 2012-11-19 | 2017-04-28 | Nitride semiconductor structure |
US15/981,864 Abandoned US20180269349A1 (en) | 2012-11-19 | 2018-05-16 | Nitride semiconductor structure |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/963,109 Expired - Fee Related US9076912B2 (en) | 2012-11-19 | 2013-08-09 | Nitride semiconductor structure and semiconductor light emitting device including the same |
US14/732,798 Active US9640712B2 (en) | 2012-11-19 | 2015-06-08 | Nitride semiconductor structure and semiconductor light emitting device including the same |
US15/499,913 Abandoned US20170256673A1 (en) | 2012-11-19 | 2017-04-28 | Nitride semiconductor structure |
Country Status (2)
Country | Link |
---|---|
US (4) | US9076912B2 (en) |
TW (1) | TWI499080B (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI524551B (en) | 2012-11-19 | 2016-03-01 | 新世紀光電股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting element |
TWI499080B (en) | 2012-11-19 | 2015-09-01 | Genesis Photonics Inc | Nitride semiconductor structure and semiconductor light-emitting element |
TWI535055B (en) | 2012-11-19 | 2016-05-21 | 新世紀光電股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting element |
JP2016086017A (en) * | 2014-10-23 | 2016-05-19 | スタンレー電気株式会社 | Semiconductor light emitting element |
CZ306026B6 (en) * | 2015-02-09 | 2016-06-29 | Crytur, Spol.S R.O. | Scintillation detector for detecting ionizing radiation |
TWI668885B (en) * | 2016-08-25 | 2019-08-11 | 億光電子工業股份有限公司 | Nitride semiconductor device and manufacturing method thereof and application package structure |
DE102016116425A1 (en) * | 2016-09-02 | 2018-03-08 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
DE102016123262A1 (en) | 2016-12-01 | 2018-06-07 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor body and method for producing a semiconductor layer sequence |
US11552217B2 (en) * | 2018-11-12 | 2023-01-10 | Epistar Corporation | Semiconductor device |
CN109671817B (en) * | 2018-11-23 | 2020-08-18 | 华灿光电(浙江)有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
DE102018133526A1 (en) * | 2018-12-21 | 2020-06-25 | Osram Opto Semiconductors Gmbh | OPTOELECTRONIC SEMICONDUCTOR COMPONENT WITH AN INTERLAYER AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR COMPONENT |
CN109742072B (en) * | 2019-01-04 | 2019-08-16 | 苏州汉骅半导体有限公司 | Integrated enhanced and depletion type HEMT and its manufacturing method |
CN113257965B (en) * | 2021-06-25 | 2021-10-29 | 至芯半导体(杭州)有限公司 | AlInGaN semiconductor light-emitting device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040026453A1 (en) * | 2002-04-17 | 2004-02-12 | Valois Sas | Fluid dispenser device |
US20050022483A1 (en) * | 2000-10-05 | 2005-02-03 | Shutic Jeffrey R | Controlling cyclone efficiency with a vacuum interface |
US20070009607A1 (en) * | 2005-07-11 | 2007-01-11 | George Jones | Antibacterial/anti-infalmmatory composition and method |
US20110011491A1 (en) * | 2008-03-13 | 2011-01-20 | Nippon Shokubai Co., Ltd. | Method for filling particulate water-absorbing agent having as a main component water-absorbing resin |
Family Cites Families (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2890396B2 (en) | 1995-03-27 | 1999-05-10 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
JPH10144960A (en) | 1996-11-08 | 1998-05-29 | Nichia Chem Ind Ltd | Method for manufacturing p-type nitride semiconductor and nitride semiconductor element |
JPH11251685A (en) | 1998-03-05 | 1999-09-17 | Toshiba Corp | Semiconductor laser |
US6278054B1 (en) | 1998-05-28 | 2001-08-21 | Tecstar Power Systems, Inc. | Solar cell having an integral monolithically grown bypass diode |
US6319742B1 (en) | 1998-07-29 | 2001-11-20 | Sanyo Electric Co., Ltd. | Method of forming nitride based semiconductor layer |
JP2000196143A (en) | 1998-12-25 | 2000-07-14 | Sharp Corp | Semiconductor light emitting element |
JP3567790B2 (en) | 1999-03-31 | 2004-09-22 | 豊田合成株式会社 | Group III nitride compound semiconductor light emitting device |
US6649287B2 (en) | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
JP4678805B2 (en) | 2001-02-14 | 2011-04-27 | シャープ株式会社 | Semiconductor light emitting device and manufacturing method thereof |
JP4693351B2 (en) | 2001-10-26 | 2011-06-01 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | Epitaxial growth substrate |
US6833564B2 (en) | 2001-11-02 | 2004-12-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride separate confinement heterostructure light emitting devices |
JP2003273473A (en) | 2001-11-05 | 2003-09-26 | Nichia Chem Ind Ltd | Semiconductor element |
TWI271877B (en) | 2002-06-04 | 2007-01-21 | Nitride Semiconductors Co Ltd | Gallium nitride compound semiconductor device and manufacturing method |
JP2004134750A (en) | 2002-09-19 | 2004-04-30 | Toyoda Gosei Co Ltd | Manufacturing method of p-type group iii nitride compound semiconductor |
DE602004011146T2 (en) * | 2003-06-27 | 2008-12-24 | Nichia Corp., Anan | Nitride semiconductor laser with current blocking layers and manufacturing method therefor |
TW200529464A (en) | 2004-02-27 | 2005-09-01 | Super Nova Optoelectronics Corp | Gallium nitride based light-emitting diode structure and manufacturing method thereof |
US20080135868A1 (en) | 2004-10-01 | 2008-06-12 | Mitsubishi Cable Industries, Ltd. | Nitride Semiconductor Light Emitting Element and Method for Manufacturing the Same |
JP4579654B2 (en) | 2004-11-11 | 2010-11-10 | パナソニック株式会社 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURING METHOD, AND LIGHTING MODULE AND LIGHTING DEVICE HAVING SEMICONDUCTOR LIGHT EMITTING DEVICE |
US7326963B2 (en) | 2004-12-06 | 2008-02-05 | Sensor Electronic Technology, Inc. | Nitride-based light emitting heterostructure |
KR100580752B1 (en) | 2004-12-23 | 2006-05-15 | 엘지이노텍 주식회사 | Nitride semiconductor led and fabrication method thereof |
WO2006109418A1 (en) | 2005-04-11 | 2006-10-19 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor light-emitting device |
US7462884B2 (en) * | 2005-10-31 | 2008-12-09 | Nichia Corporation | Nitride semiconductor device |
JP2007227671A (en) | 2006-02-23 | 2007-09-06 | Rohm Co Ltd | Light emitting element |
KR100756841B1 (en) | 2006-03-13 | 2007-09-07 | 서울옵토디바이스주식회사 | Light emitting diode having graded buffer layer and fabrication method thereof |
DE102006025964A1 (en) | 2006-06-02 | 2007-12-06 | Osram Opto Semiconductors Gmbh | Multiple quantum well structure, radiation-emitting semiconductor body and radiation-emitting component |
JP4948134B2 (en) | 2006-11-22 | 2012-06-06 | シャープ株式会社 | Nitride semiconductor light emitting device |
CN101267008A (en) | 2007-03-16 | 2008-09-17 | 先进开发光电股份有限公司 | Photoelectrical semiconductor component with 3-familty Ni compound semiconductor buffer layer and its making method |
JP2008244307A (en) | 2007-03-28 | 2008-10-09 | Sharp Corp | Semiconductor light-emitting element and nitride semiconductor light-emitting element |
JP2008258503A (en) | 2007-04-06 | 2008-10-23 | Sumitomo Electric Ind Ltd | Nitride-based semiconductor light emitting element, and method of fabricating nitride-based semiconductor light emitting element |
WO2009005894A2 (en) * | 2007-05-08 | 2009-01-08 | Nitek, Inc. | Non-polar ultraviolet light emitting device and method for fabricating same |
TW200908393A (en) | 2007-06-15 | 2009-02-16 | Rohm Co Ltd | Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor |
JP4341702B2 (en) | 2007-06-21 | 2009-10-07 | 住友電気工業株式会社 | Group III nitride semiconductor light emitting device |
KR101459752B1 (en) | 2007-06-22 | 2014-11-13 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
JP2009021361A (en) | 2007-07-11 | 2009-01-29 | Sumitomo Electric Ind Ltd | Nitride-based semiconductor light emitting element, and method of fabricating nitride-based semiconductor light emitting element |
JP2009021424A (en) | 2007-07-12 | 2009-01-29 | Opnext Japan Inc | Nitride semiconductor light emitting element, and manufacturing method thereof |
TWI364119B (en) | 2007-08-17 | 2012-05-11 | Epistar Corp | Light emitting diode device and manufacturing method therof |
JP2009081406A (en) | 2007-09-27 | 2009-04-16 | Showa Denko Kk | Group iii nitride semiconductor light-emitting device, method for manufacturing thereof, and lamp |
JP2009152448A (en) | 2007-12-21 | 2009-07-09 | Dowa Electronics Materials Co Ltd | Nitride semiconductor element, and manufacturing method thereof |
CN101527341B (en) | 2008-03-07 | 2013-04-24 | 展晶科技(深圳)有限公司 | III-family nitrogen compound semiconductor light-emitting diode |
WO2009146461A1 (en) | 2008-05-30 | 2009-12-03 | The Regents Of The University Of California | (al,ga,in)n diode laser fabricated at reduced temperature |
JP4572963B2 (en) | 2008-07-09 | 2010-11-04 | 住友電気工業株式会社 | Group III nitride semiconductor light emitting device and epitaxial wafer |
CN101494265B (en) | 2008-07-17 | 2011-03-23 | 厦门市三安光电科技有限公司 | Nitride LED with p type restriction transmission layer |
US20100019222A1 (en) | 2008-07-25 | 2010-01-28 | High Power Opto.Inc. | Low-temperature led chip metal bonding layer |
JP2010040842A (en) | 2008-08-06 | 2010-02-18 | Nec Electronics Corp | Semiconductor laser |
JP2010040867A (en) | 2008-08-06 | 2010-02-18 | Showa Denko Kk | Group iii nitride semiconductor laminated structure and method of manufacturing same |
KR101017396B1 (en) | 2008-08-20 | 2011-02-28 | 서울옵토디바이스주식회사 | Light emitting diode having modulation doped layer |
CN101685844A (en) | 2008-09-27 | 2010-03-31 | 中国科学院物理研究所 | GaN-based Single chip white light emitting diode epitaxial material |
CN101488548B (en) | 2009-02-27 | 2010-07-14 | 上海蓝光科技有限公司 | LED of high In ingredient multiple InGaN/GaN quantum wells structure |
US8035123B2 (en) | 2009-03-26 | 2011-10-11 | High Power Opto. Inc. | High light-extraction efficiency light-emitting diode structure |
US8742459B2 (en) | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
CN101645480B (en) | 2009-06-22 | 2012-05-30 | 华灿光电股份有限公司 | Method for enhancing antistatic ability of GaN-based light-emitting diode |
US20110001126A1 (en) * | 2009-07-02 | 2011-01-06 | Sharp Kabushiki Kaisha | Nitride semiconductor chip, method of fabrication thereof, and semiconductor device |
JP2011023534A (en) | 2009-07-15 | 2011-02-03 | Sumitomo Electric Ind Ltd | Nitride-based semiconductor light emitting element |
JP5635246B2 (en) | 2009-07-15 | 2014-12-03 | 住友電気工業株式会社 | Group III nitride semiconductor optical device and epitaxial substrate |
US8604461B2 (en) | 2009-12-16 | 2013-12-10 | Cree, Inc. | Semiconductor device structures with modulated doping and related methods |
US8575592B2 (en) | 2010-02-03 | 2013-11-05 | Cree, Inc. | Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses |
CN101807640A (en) | 2010-03-05 | 2010-08-18 | 中国科学院半导体研究所 | Method for improving LED luminous efficiency by using three-dimensional polarized induction positive hole gas |
KR101766719B1 (en) | 2010-03-25 | 2017-08-09 | 엘지이노텍 주식회사 | Light emitting diode and Light emitting device comprising the same |
JP5533744B2 (en) | 2010-03-31 | 2014-06-25 | 豊田合成株式会社 | Group III nitride semiconductor light emitting device |
KR20130064042A (en) | 2010-04-30 | 2013-06-17 | 스미또모 가가꾸 가부시키가이샤 | Semiconductor substrate, method for manufacturing semiconductor substrate, electronic device, and method for manufacturing electronic device |
US20120126201A1 (en) | 2010-11-23 | 2012-05-24 | Heng Liu | Gallium nitride led devices with pitted layers and methods for making thereof |
US10134948B2 (en) | 2011-02-25 | 2018-11-20 | Sensor Electronic Technology, Inc. | Light emitting diode with polarization control |
CN103444021B (en) | 2011-03-24 | 2016-04-27 | 松下知识产权经营株式会社 | Nitride semiconductor luminescent element |
TWI434435B (en) | 2011-04-01 | 2014-04-11 | Genesis Photonics Inc | Light emitting diode structure and fabrication method thereof |
CN102751393A (en) | 2011-04-20 | 2012-10-24 | 新世纪光电股份有限公司 | Light emitting diode structure |
CN102157646A (en) | 2011-05-03 | 2011-08-17 | 映瑞光电科技(上海)有限公司 | Nitride LED structure and preparation method thereof |
CN102185056B (en) | 2011-05-05 | 2012-10-03 | 中国科学院半导体研究所 | Gallium-nitride-based light emitting diode capable of improving electron injection efficiency |
CN102214739A (en) | 2011-05-24 | 2011-10-12 | 中国科学院半导体研究所 | Method for roughing epitaxy of GaN (gallium nitride)-based LED (light-emitting diode) |
CN102214740A (en) | 2011-05-24 | 2011-10-12 | 中国科学院半导体研究所 | Method for improving antistatic capability of gallium nitride based light emitting diode |
US8835930B2 (en) * | 2011-06-28 | 2014-09-16 | Hitachi Metals, Ltd. | Gallium nitride rectifying device |
CN103296162A (en) | 2012-03-01 | 2013-09-11 | 财团法人工业技术研究院 | Light emitting diode |
US20130228743A1 (en) | 2012-03-01 | 2013-09-05 | Industrial Technology Research Institute | Light emitting diode |
TWI549317B (en) | 2012-03-01 | 2016-09-11 | 財團法人工業技術研究院 | Light emitting diode |
CN102569571B (en) | 2012-03-06 | 2015-06-24 | 华灿光电股份有限公司 | Semiconductor light emitting diode and manufacturing method thereof |
CN102637787B (en) | 2012-04-25 | 2014-10-15 | 中国科学院半导体研究所 | Method for uninterrupted growth of high-quality InGaN/GaN multi-quantum well (MQW) |
CN102738328B (en) | 2012-07-02 | 2015-05-20 | 华灿光电股份有限公司 | Epitaxial wafer of light-emitting diode and manufacturing method thereof |
TWI511325B (en) | 2012-11-19 | 2015-12-01 | Genesis Photonics Inc | Nitride semiconductor structure and semiconductor light-emitting element |
TWI524551B (en) | 2012-11-19 | 2016-03-01 | 新世紀光電股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting element |
TWI499080B (en) | 2012-11-19 | 2015-09-01 | Genesis Photonics Inc | Nitride semiconductor structure and semiconductor light-emitting element |
TWI535055B (en) | 2012-11-19 | 2016-05-21 | 新世紀光電股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting element |
CN107819059A (en) | 2013-01-25 | 2018-03-20 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting elements |
CN103972340B (en) | 2013-01-25 | 2018-06-08 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting elements |
CN103972342A (en) | 2013-01-25 | 2014-08-06 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting component |
TWI536606B (en) | 2013-12-25 | 2016-06-01 | 新世紀光電股份有限公司 | Light emitting diode structure |
-
2012
- 2012-11-19 TW TW101143101A patent/TWI499080B/en active
-
2013
- 2013-08-09 US US13/963,109 patent/US9076912B2/en not_active Expired - Fee Related
-
2015
- 2015-06-08 US US14/732,798 patent/US9640712B2/en active Active
-
2017
- 2017-04-28 US US15/499,913 patent/US20170256673A1/en not_active Abandoned
-
2018
- 2018-05-16 US US15/981,864 patent/US20180269349A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050022483A1 (en) * | 2000-10-05 | 2005-02-03 | Shutic Jeffrey R | Controlling cyclone efficiency with a vacuum interface |
US20040026453A1 (en) * | 2002-04-17 | 2004-02-12 | Valois Sas | Fluid dispenser device |
US20070009607A1 (en) * | 2005-07-11 | 2007-01-11 | George Jones | Antibacterial/anti-infalmmatory composition and method |
US20110011491A1 (en) * | 2008-03-13 | 2011-01-20 | Nippon Shokubai Co., Ltd. | Method for filling particulate water-absorbing agent having as a main component water-absorbing resin |
Also Published As
Publication number | Publication date |
---|---|
TWI499080B (en) | 2015-09-01 |
US20140138617A1 (en) | 2014-05-22 |
TW201421733A (en) | 2014-06-01 |
US9076912B2 (en) | 2015-07-07 |
US9640712B2 (en) | 2017-05-02 |
US20170256673A1 (en) | 2017-09-07 |
US20150270433A1 (en) | 2015-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20180269349A1 (en) | Nitride semiconductor structure | |
US9029832B2 (en) | Group III nitride semiconductor light-emitting device and method for producing the same | |
US9755107B2 (en) | Group III nitride semiconductor light-emitting device | |
WO2010100844A1 (en) | Nitride semiconductor element and method for manufacturing same | |
JP2003110136A (en) | Light emitting element | |
US10381511B2 (en) | Nitride semiconductor structure and semiconductor light emitting device including the same | |
US20110272730A1 (en) | Light emitting device | |
US8759815B2 (en) | Nitride based semiconductor light emitting device | |
JP2015065329A (en) | Group iii nitride semiconductor light emitting element | |
KR101928479B1 (en) | Iii-nitride semiconductor light emitting device | |
CN102544290A (en) | Nitirde semiconductor light emitting diode | |
JP2010080741A (en) | Semiconductor light-emitting element | |
KR101117484B1 (en) | Semiconductor light emitting device | |
CN103972343B (en) | Nitride semiconductor structure and semiconductor light-emitting elements | |
JP5800251B2 (en) | LED element | |
JPWO2019097963A1 (en) | Group III nitride semiconductor | |
TWI610460B (en) | Nitride semiconductor structure | |
JP6071044B2 (en) | Semiconductor light emitting device and manufacturing method thereof | |
CN113451455B (en) | Preparation method of LED epitaxy, LED epitaxy structure and LED chip | |
JP2014003121A (en) | Nitride semiconductor light-emitting element | |
KR20120100369A (en) | Iii-nitride semiconductor light emitting device | |
US20220310874A1 (en) | Group iii nitride semiconductor device and method for producing same | |
TWI649896B (en) | Nitride semiconductor structure | |
US9508895B2 (en) | Group III nitride semiconductor light-emitting device and production method therefor | |
TWI556467B (en) | Nitride semiconductor structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |