US20180123563A1 - Method, System, and Apparatus for Resonator Circuits and Modulating Resonators - Google Patents
Method, System, and Apparatus for Resonator Circuits and Modulating Resonators Download PDFInfo
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- US20180123563A1 US20180123563A1 US15/493,041 US201715493041A US2018123563A1 US 20180123563 A1 US20180123563 A1 US 20180123563A1 US 201715493041 A US201715493041 A US 201715493041A US 2018123563 A1 US2018123563 A1 US 2018123563A1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
- H03H7/40—Automatic matching of load impedance to source impedance
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/48—Networks for connecting several sources or loads, working on the same frequency or frequency band, to a common load or source
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/542—Filters comprising resonators of piezo-electric or electrostrictive material including passive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/547—Notch filters, e.g. notch BAW or thin film resonator filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6403—Programmable filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6489—Compensation of undesirable effects
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H2003/0071—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of bulk acoustic wave and surface acoustic wave elements in the same process
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
- H03H2009/02188—Electrically tuning
- H03H2009/02204—Electrically tuning operating on an additional circuit element, e.g. applying a tuning DC voltage to a passive circuit element connected to the resonator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/01—Tuned parameter of filter characteristics
- H03H2210/015—Quality factor or bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/02—Variable filter component
- H03H2210/025—Capacitor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/03—Type of tuning
- H03H2210/036—Stepwise
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/04—Filter calibration method
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2240/00—Indexing scheme relating to filter banks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2250/00—Indexing scheme relating to dual- or multi-band filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/46—Networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6406—Filters characterised by a particular frequency characteristic
- H03H9/6409—SAW notch filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J2200/00—Indexing scheme relating to tuning resonant circuits and selecting resonant circuits
- H03J2200/10—Tuning of a resonator by means of digitally controlled capacitor bank
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Transceivers (AREA)
- Filters And Equalizers (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.
Description
- This application is a continuation of commonly assigned and co-pending U.S. Utility application Ser. No. 14/720,613 filed May 22, 2015 entitled “METHOD, SYSTEM, AND APPARATUS FOR RESONATOR CIRCUITS AND MODULATING RESONATORS” (attorney docket number PER-060-CON-1), which Ser. No. 14/720,613 is a continuation of commonly assigned U.S. Utility application Ser. No. 13/316,243 filed Dec. 9, 2011 and entitled “METHOD, SYSTEM, AND APPARATUS FOR RESONATOR CIRCUITS AND MODULATING RESONATORS”, now U.S. Pat. No. 9,041,484, issued May 26, 2015 (attorney docket number PER-060-PAP), which Ser. No. 13/316,243 application claims priority under 35 USC 119 to the following U.S. provisional patent applications: provisional application No. 61/422,009 filed Dec. 10, 2010 and entitled “METHOD, SYSTEM, AND APPARATUS FOR RESONATOR CIRCUITS AND MODULATING RESONATORS”, attorney docket number PER-060-PROV; U.S. provisional application No. 61/438,204 filed Jan. 31, 2011, entitled “METHOD, SYSTEM, AND APPARATUS FOR RESONATOR CIRCUITS AND MODULATING RESONATORS”, attorney docket number PER-060-PROV-2; U.S. provisional application No. 61/497,819 filed Jun. 16, 2011, entitled “METHOD, SYSTEM, AND APPARATUS FOR RESONATOR CIRCUITS AND MODULATING RESONATORS”, attorney docket number PER-060-PROV-3; U.S. provisional application No. 61/521,590 filed Aug. 9, 2011, entitled “METHOD, SYSTEM, AND APPARATUS FOR RESONATOR CIRCUITS AND MODULATING RESONATORS”, attorney docket number PER-060-PROV-4; U.S. provisional application No. 61/542,783 filed Oct. 3, 2011, entitled “METHOD, SYSTEM, AND APPARATUS FOR RESONATOR CIRCUITS AND MODULATING RESONATORS”, attorney docket number PER-060-PROV-5; and U.S. provisional application No. 61/565,413 filed Nov. 30, 2011, entitled “METHOD, SYSTEM, AND APPARATUS FOR RESONATOR CIRCUITS AND MODULATING RESONATORS”, attorney docket number PER-060-PROV-6; and the contents of each provisional application and patent application cited above are hereby incorporated herein by reference as if set forth in full.
- Various embodiments described herein relate generally to resonator circuits and modulating resonators, including systems, apparatus, and methods employing resonators.
- It may be desirable to modulate one or more resonators including shifting its resonate and anti-resonate points and provide resonator circuits, the present invention provides such modulation and circuits.
-
FIG. 1A is a simplified block diagram of duplex signal transceiver architecture according to various embodiments. -
FIG. 1B is a simplified diagram of an RF channel configuration according to various embodiments. -
FIG. 1C is a simplified, partial diagram of a section of the RF channel configuration shown inFIG. 1B . -
FIG. 1D is a simplified, partial diagram of a section of the RF channel configuration shown inFIG. 1B with a filter characteristic applied to a first band according to various embodiments. -
FIG. 1E is a simplified, partial diagram of a section of the RF channel configuration shown inFIG. 1B with a filter characteristic applied to a second band according to various embodiments. -
FIG. 1F is a simplified, partial diagram of a section of the RF channel configuration shown inFIG. 1B with a filter characteristic applied to a subunit or band of a first band according to various embodiments. -
FIG. 1G is a simplified, partial diagram of a section of the RF channel configuration shown inFIG. 1B with a filter characteristic applied to a subunit or band of a second band according to various embodiments. -
FIG. 2A is a block diagram of an electrical signal filter module including resonators according to various embodiments. -
FIG. 2B is a block diagram of a filter module representing the electrical elements representing the characteristics of a resonator according to various embodiments. -
FIGS. 2C and 21 are block diagrams of modulated or tunable resonator modules according to various embodiments. -
FIGS. 2D-H and 2J are block diagrams of tunable filter modules including tunable or modulated resonators according to various embodiments. -
FIG. 3A-3C are diagrams of capacitor modules that may be coupled to AW according to various embodiments. -
FIG. 3D is a diagram of a tunable capacitor module that may be coupled to AW according to various embodiments. -
FIG. 3E is a diagram of a tunable capacitor module that may be coupled to AW according to various embodiments. -
FIG. 4 is a block diagram of fabrication configuration for a tunable filter module including tunable resonators according to various embodiments. -
FIG. 5A is a block diagram of an electrical signal filter module including switchable resonators according to various embodiments. -
FIGS. 5B-5D are block diagrams of switchable resonator modules according to various embodiments. -
FIGS. 5E-5F are block diagrams of tunable, switchable filter modules including tunable or modulated, switchable resonators according to various embodiments. -
FIG. 5G is a block diagram of a tunable, switchable filter module including tunable or modulated resonators according to various embodiments. -
FIGS. 6A-6F are diagrams of filter responses of tunable, switchable filter modules according to various embodiments. -
FIG. 7A is a block diagram of a filter module according to various embodiments. -
FIG. 7B is a block diagram of a filter module including resonators according to various embodiments. -
FIG. 8A is a block diagram of a switchable filter module according to various embodiments. -
FIG. 8B is a block diagram of a switchable filter module including resonators according to various embodiments. -
FIG. 8C is a block diagram of a tunable, switchable filter module including tunable or modulated resonators according to various embodiments. -
FIG. 9A is a block diagram of a filter module according to various embodiments. -
FIGS. 9B-9C are block diagrams of a tunable, switchable filter module including tunable or modulated resonators according to various embodiments. -
FIGS. 10A-10B are diagrams of filter responses of tunable, switchable filter modules according to various embodiments. -
FIG. 11 is a diagram of a filter frequency response according to various embodiments. -
FIG. 12 is a flow diagram of a filter response selection method according to various embodiments. -
FIG. 13A is a simplified block diagram of a filtering architecture according to various embodiments. -
FIG. 13B is a block diagram of a filter architecture including modulated or tunable resonator modules and a resonator module according to various embodiments. -
FIG. 14A is a diagram of a filter frequency response of a resonator module according to various embodiments. -
FIG. 14B is a diagram of a filter frequency response of a modulated or tunable resonator module according to various embodiments. -
FIG. 14C is a diagram of a filter frequency response of a filter architecture including a modulated or tunable resonator module and a resonator module according to various embodiments. -
FIG. 15A is a simplified diagram of an RF channel configuration according to various embodiments. -
FIG. 15B is a simplified diagram of an RF channel configuration with a channel in a first mode according to various embodiments. -
FIG. 15C is a simplified diagram of an RF channel configuration with a channel in a second mode according to various embodiments. -
FIG. 16A is a simplified block diagram of a filtering architecture according to various embodiments. -
FIG. 16B is a block diagram of a filter architecture including switchable, modulated or tunable resonator modules and a resonator module according to various embodiments. -
FIG. 16C is a block diagram of another filter architecture including switchable, modulated or tunable resonator modules and a resonator module according to various embodiments. -
FIG. 16D is a block diagram of another filter architecture including switchable, modulated or tunable resonator modules and a resonator module according to various embodiments. -
FIG. 16E is a simplified block diagram of signal transceiver architecture according to various embodiments. -
FIG. 17A is a diagram of a filter frequency response of a resonator module according to various embodiments. -
FIG. 17B is a diagram of a filter frequency response of a switchable, modulated or tunable resonator module in a first mode according to various embodiments. -
FIG. 17C is a diagram of a filter frequency response of a filter architecture including a switchable, modulated or tunable resonator module in a first mode and a resonator module according to various embodiments. -
FIG. 17D is a diagram of a filter frequency response of a resonator module according to various embodiments. -
FIG. 17E is a diagram of a filter frequency response of a switchable, modulated or tunable resonator module in a second mode according to various embodiments. -
FIG. 17F is a diagram of a filter frequency response of a filter architecture including a switchable, modulated or tunable resonator module in a second mode and a resonator module according to various embodiments. -
FIG. 17G is a diagram of a filter frequency response of a filter architecture including a first switchable, modulated or tunable resonator module, a first resonator module, a second switchable, modulated or tunable resonator module, and a second resonator module according to various embodiments. -
FIG. 18 is a flow diagram of a combined filter configuration method according to various embodiments. -
FIG. 19A is a block diagram of an electrical signal filter module including resonators and diagrams of filter frequency responses of resonators according to various embodiments. -
FIG. 19B is a diagram of filter frequency responses of the electrical signal filter module including resonators ofFIG. 19A in a first, pass-band filter mode according to various embodiments. -
FIG. 19C is a diagram of filter frequency responses of the electrical signal filter module including resonators ofFIG. 19A in a second, notch filter mode according to various embodiments. -
FIG. 19D is a diagram of combined filter frequency responses of the electrical signal filter module including resonators ofFIG. 19A in the first, pass-band filter mode according to various embodiments. -
FIG. 19E is a diagram of combined filter frequency responses of the electrical signal filter module including resonators ofFIG. 19A in a second, notch filter mode according to various embodiments. -
FIG. 20A is a block diagram of a tunable filter module including electrical elements representing the characteristics of tunable resonators according to various embodiments. -
FIG. 20B is a block diagram of another tunable filter module including electrical elements representing the characteristics of tunable resonators according to various embodiments. -
FIG. 21A is a block diagram of an electrical signal filter module including resonators and diagrams of filter frequency responses of resonators according to various embodiments. -
FIG. 21B is a diagram of filter frequency responses of the electrical signal filter module including resonators ofFIG. 21A in a notch filter mode according to various embodiments. -
FIG. 21C is a diagram of combined filter frequency responses of the electrical signal filter module including resonators ofFIG. 21A in the notch filter mode according to various embodiments. -
FIG. 22A is a diagram of a resonant frequency probably function representing manufacturing variations for an acoustic wave (AW) device the according to various embodiments. -
FIG. 22B is a diagram of an anti-resonant frequency probably function representing manufacturing variations for an acoustic wave (AW) device the according to various embodiments. -
FIG. 22C is a diagram of a resonant frequency function representing temperature variations for an acoustic wave (AW) module the according to various embodiments. -
FIG. 22D is a diagram of a capacitance per unit area probably function representing manufacturing variations for a capacitor module the according to various embodiments. -
FIG. 23 is a block diagram of a configuration for a tunable filter module including tunable resonators according to various embodiments. -
FIG. 24 is a flow diagram of a component modeling, manufacturing, and configuration method according to various embodiments. -
FIG. 25A is a simplified block diagram of a signal filter architecture according to various embodiments. -
FIG. 25B is a simplified block diagram of a signal filter architecture according to various embodiments. -
FIG. 26A to 27C are diagrams of filter frequency responses of a signal filter architecture according to various embodiments. -
FIG. 28A is a simplified block diagram of a signal filter architecture according to various embodiments. -
FIG. 28B is a simplified block diagram of a signal filter architecture according to various embodiments. -
FIGS. 29A and 29B are diagrams of filter frequency responses of a signal filter according to various embodiments. -
FIG. 1A is a simplified block diagram of duplexsignal transceiver architecture 10 according to various embodiments. As shown inFIG. 1A ,architecture 10 includes a power amplifier module (PA) 12,signal duplexer module 20, radio frequency (RF)switch module 40, low noise amplifier (LNA)module 14,mixer module 60A, andRF signal antenna 50. In operation asignal 8 to be transmitted on theantenna 50 may be amplified via thePA module 12, filtered by theduplexer module 20, and coupled to theantenna 50 via theRF switch module 40. In a duplex signal architecture a received signal on theantenna 50 may be simultaneously processed theduplexer module 20. The resultant receivesignal 24 may be amplified by theLNA module 14 and down-mixed to abaseband signal 60C via themixer module 60A and areference frequency signal 60B. -
FIG. 1B is a simplified diagram of anRF channel configuration 70A according to various embodiments. As shown inFIG. 1B , a transmit (TX)band 73A and a receive (RX)band 73B may be located in close frequency proximity. The TX band may have a width defined by 72A, 72B (start and end of the TX band), the RX band may have a width defined by 72C, 72D (start and end of the RX band), and the frequency separation between the bands may be the difference between 72C and 72B (start of the RX band and end of the TX band). TheTX band 73A and theRX band 73B may include a plurality of sub-bands orunits FIGS. 1C to 1G . - At the
antenna 50 the TXband signal energy 73A may be greater than the RX band signal energy as shown inFIGS. 1B to 1G . Such a differential in signal energy may saturate theLNA module 14 and occlude theRX signal 24 induplexed signal architecture 10. Theduplexer module 20 may include one or more filters (shown inFIG. 2F ) to limit interference of TX and RX signals in the TX andRX bands RX signal 42 may be communicated according to one or more communication protocol or standards including Code Division Multiple Access (“CDMA”), Wide Band Code Division Multiple Access (“W-CDMA”), Worldwide Interoperability for Microwave Access (“WIMAX”), Global System for Mobile Communications (“GSM”), Enhanced Data Rates for GSM Evolution (EDGE), and other radio communication standards or protocols. Such standards or protocols may provide minimum signal separation or interference mitigation requirements for communication of signals on the respective networks via anantenna 50. - The
PA module 12 may also introduce noise or interface due to its fall off in power about the TX band to be amplified. The excess PA power may interfere with theLNA module 14 operation. A blocker signal near the TX,RX bands LNA module 14 operation and cause loss in theRX signal 24. - Duplex systems or
architecture 10 may employ filter modules and including duplexer modules. The duplexer modules may include known filter elements such as resistors, capacitors, inductors, digital signal processors (DSPs), and resonators. Configurations of these components may form filter modules to attempt to meet or exceed adjacent channel or band interface requirements according to one or more communication protocols or standards. In an embodiment thechannel configuration 70A may be used for a CDMA band five (V) signals where theTX band 73A extends from 824 to 849 MHz (72A, 72B) and theRX band 73B extends from 869 to 894 MHz (72C, 72D). In this configuration, TheTX band 73A andRX band 73B are 25 MHz width and separated by 20 MHz (72C minus 72B). As shown inFIGS. 1C to 1G , theTX band 73A may include a plurality of sub-bands 74A, 74B, 74C and theRX band 73B may including a plurality of sub-bands 75A, 75B, 75C. In an embodiment the sub-bands may be about 1.5 MHz wide (CDMA) and 5 MHz wide (W-CDMA). - In order to limit interface between adjacent bands, a filter module having a frequency characteristic 76A as shown in
FIG. 1D may be applied to theTX band 73A. Similarly, a filter module having a frequency characteristic 76B as shown inFIG. 1E may be applied to theRX band 73B. As shown inFIGS. 1D and 1E thefilter characteristics RX signal 42 filter characteristic 76A, 76B. - Resonators may include surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices. Such devices may be used in filters, oscillators and transformed and commonly cause the transduction of acoustic waves. In SAW and BAW, electrical energy is transduced to mechanical energy back to electrical energy via piezoelectric materials. The piezoelectric materials may include quartz, lithium niobate, lithium tantalate, and lanthanum gallium silicate. One or more transverse fingers of conductive elements may be placed in the piezoelectric materials to convert electrical energy to mechanical energy and back to electrical energy. The SAW or resonator may include one or more one or more interdigital transducers (IDTs) (transverse fingers of electrical conductive elements) for such energy conversions or transductions. A resonator construction and material requirements may be more complex and expensive for electrical signals having high frequency content such as signals transmitted according to one or more RF communication protocols or standards.
- It may be desirable for a filter or
duplexer module 20 to generatefrequency characteristics RX band FIGS. 1F, 1G .Such duplexer modules 20 or filter modules may significantly suppress interface between TX andRX bands band -
FIG. 2A is a block diagram of an electricalsignal filter module 90A including resonators according to various embodiments. Themodule 90A includes threeresonators resistors signal generator 92A. In an embodiment thesignal generator 92A may represent a TX signal to be communicated via anantenna 50, theresistor 94A may represent the load of the TX signal, and theresistor 94B may represent the load of anantenna 50. In an embodiment theresonators source load 94A andantenna load 94B). Theresonators resonator - An
acoustic wave resonator FIG. 2B . As shown inFIG. 2B , aresonator 80A may be represented by afirst capacitor 82A in parallel with a series coupling of aninductor 86A, asecond capacitor 82B, and aresistor 84A where thecapacitors inductor 86A may have an inductance of Lm and theresistor 84A may have a resistance of Rm in an embodiment. Modeling of resonators or SAW devices via electrical components is described in the reference entitled “Surface Acoustic Wave Devices in Telecommunications: Modelling and Simulation” by Ken-Ya Hashimoto, published by Springer on Jul. 31, 2000, ISBN-10: 354067232X and ISBN-13: 978-3540672326. - The Cm and Lm may be related to the elasticity and inertia of an
AW AW AW inductor 86A,second capacitor 82B, andresistor 84A, the resonance wr and the anti-resonance wa of an acoustic wave (AW)device 80A may be defined by the following equations: -
- Using these
equations AW 80C may form a short path and the resultant filter formed by theAW 80A,AW 80B, andAW 80C may have a pass band about the wr of 80A, 80B and wa of 80C (77C as shown inFIG. 1D ), a first notch before the pass band at wr of 80C (77A inFIG. 1D ), and a second notch after the pass band at wa of 80A, 80B (77B inFIG. 1D ). Theseresonators AW AW - It may be desirable to shift the wr and wa of
AW specific sub-bands RX bands AW AW various capacitors 98A may be coupled in parallel or serially with aAW AW -
FIGS. 2C and 21 are block diagrams of modulated ortunable resonator modules module 96A shown inFIG. 2C may include avariable capacitor 98A in parallel with anAW 80A. Based on the above equations, the anti-resonate wa may be modulated by thevariable capacitor 98A having a capacitance Cv (effective Co of an AW may be Co+Cv formodule 96A). Themodule 96G shown inFIG. 2I may include avariable capacitor 98G parallel with anAW 80G and avariable capacitor 98H in series with theAW 80G. Based on the above equations, the anti-resonate wa may be modulated by thevariable capacitor 98G having a capacitance Cv1 and thevariable capacitor 98H having a capacitance Cv2. Similarly, the resonate wr may be modulated by thevariable capacitor 98H having the capacitance Cv2. -
FIG. 2D is a block diagram of an electricalsignal filter module 90B including tunable or modulatedresonator modules module 90B is similar tomodule 90A shown inFIG. 2A in that it includes threeresonators resonators resonator variable capacitor - As noted above
AW 80C may form a short path and the resultant filter formed by theAW 80A,AW 80B, andAW 80C may have a pass band about the wr of 80A, 80B and wa of 80C (77C as shown inFIG. 1D ), a first notch before the pass band at wr of 80C (77A inFIG. 1D ), and a second notch after the pass band at wa of 80A, 80B (77B inFIG. 1D ). By varying thecapacitors pass band 77C andsecond notch 77B shown inFIG. 1D may be varied. -
FIGS. 2E-H are block diagrams of tunable filter modules including tunable or modulated resonators or AW that may be employed for filtering anRX band 73B or sub-band 75A, 75B, 75C in an embodiment. As shown inFIG. 2E thetunable filter module 90C may include tunable resonate orAW modules resistor 94C, andresistor 94B. Similar to above,resistor 94B may represent theantenna 50 load andresistor 94C may represent a signal (RX or TX) load. In an embodiment, themodule 90C may include twotunable shorts AW modules Module 90C is similar tomodule 90A (T—configuration) with the addition of a second short 96G that includes acapacitor 98G designed to effect the anti-resonate frequency and a secondtunable capacitor 98H in series with theAW 80G to further effect the resonate frequency of theAW 80G. -
FIG. 2F is a block diagram of an electricalsignal filter module 90D including a firsttunable filter module 95A and a secondtunable filter module 95B according to various embodiments. Themodule 90D includes afirst filter module 95B, asecond filter module 95B, afirst signal source 92A and aresistor load 94A, asecond signal source 92B andresistor load 94C, andantenna load resistor 94B.Module 95A is similar tomodule 90B andmodule 95B is similar tomodule 90C wheremodule 95A is a T-configuration module andmodule 95B is a modified T-configuration with a second short (with aseries tunable capacitor 98H). In an embodiment themodule 90D may be employed as atunable duplexer 20 inFIG. 1A . -
FIGS. 2G, 2H, 2J are block diagrams oftunable filter modules RX band 73B or sub-band 75A, 75B, 75C in an embodiment. As shown inFIG. 2G thetunable filter module 90E may include tunable resonate orAW modules resistor 94C,resistor 94B, andeffective capacitance resistor 94B may represent theantenna 50 load andresistor 94C may represent a signal (RX or TX) load and 92B a signal source. In an embodiment, themodule 90E may include twoshorts tunable AW module 96D in series with theloads Module 90E is similar tomodule 90D with the elimination of thesecond module 96E in series with thefirst module 96D. - As shown in
FIG. 2H thetunable filter module 90F may include tunable resonate orAW modules tunable capacitor 98H,resistor 94C,resistor 94B, andeffective capacitance resistor 94B may represent theantenna 50 load andresistor 94C may represent a signal (RX or TX) load and 92B a signal source. In an embodiment, themodule 90F may include threetunable shorts tunable AW module 96D in series with theloads Module 90F is similar tomodule 90F with the addition of a thirdshort module 96H. - As shown in
FIG. 2J thetunable filter module 95E may include tunable resonateAW modules AW modules filter module 95E, tunable resonateAW modules AW modules AW more AW 80A to 80I may not be tunable (AW modules FIG. 2J ) while one ormore AW 80A to 80I may be tunable (80B and 80F inFIG. 2J ). Atunable capacitor AW 80A to 80I when one ormore AW 80A to 80I may be desirably tunable to modulate theAW 80A to 80I for temperature or process variations or provide frequency adjustments to theAW 80A to 80I. -
FIG. 3A-3C are diagrams of capacitor modules according to various embodiments where the modules may be used ascapacitors 98A to 98G (in parallel to anAW 80A to 80F) and 98H (in series with anAW 80G). As shown inFIG. 3C , themodule 120C includes asingle capacitor 104A. Thecapacitor 104A capacitance may be determined after the physical characteristics of anAW 80A to 80G are measured (to account for process variations or operating temperature variance). Thecapacitor 104A capacitance may also be varied for different TX orRX bands module 96A to 96G including themodule 120C. - As shown in
FIG. 3B , themodule 120B includes thecapacitor 104A and asecond capacitor 104B andresistor 106A parallel to thefirst capacitor 104A. Theadditional capacitor 104B may further shift theAW 80A to 80G anti-resonate or resonate frequency to tune to a second band or sub-band. As shown inFIG. 3A , themodule 120A includes thecapacitor 104A, thesecond capacitor 104B and aresistor 106A parallel to thefirst capacitor 104A, and athird capacitor 104C and asecond resistor 106B parallel to thefirst capacitor 104A (andsecond capacitor 104B andresistor 106A). Theadditional capacitor 104C may still further shift theAW 80A to 80G anti-resonate or resonate frequency to tune to a third band or sub-band when themodules 120A to 120D are employed in parallel or series with aAW 80A to 80G as shown inmodules 96A to 96G. -
FIG. 3D is a diagram of a tunable capacitance module according to various embodiments. As shown inFIG. 3D , themodule 120D includes thecapacitor 104A, thesecond capacitor 104B andresistor 106A selectively parallel (via aswitch 105A) to thefirst capacitor 104A, and athird capacitor 104C and asecond resistor 106B selectively parallel (via thesecond switch 105B) to thefirst capacitor 104A (andsecond capacitor 104B andresistor 106A). Themodule 120D may shift theAW 80A to 80H anti-resonate or resonate frequency to tune to a first, second, or third band or sub-band as a function of theswitches AW 80A to 80H as shown inmodules 96A to 96G. Themodule 120D may also shift anAW 80A to 80H anti-resonate or resonate frequency to account for temperature or manufacturing variants. -
FIG. 3E is a diagram of atunable capacitor module 600 according to various embodiments. Thetunable capacitor module 600 includes a plurality ofcapacitor banks 602 each switchable in operation viacontrol lines previous bank 602 so that eachcontrol line CMOS FETs respective control lines tunable AW module 96A to 96G using the tunable capacitor 600 (in series or parallel) may have N2−1 (where N is the number of control lines) different tunable anti-resonance or resonate frequencies based on the N2−1 effective capacitances of themodule 600. Further details of digitally tunable capacitors are recited in commonly assigned and co-pending application entitled “METHOD AND APPARATUS FOR USE IN DIGITALLY TUNING A CAPACITOR IN AN INTEGRATED CIRCUIT DEVICE”, Attorney Docket—PER-024, Filed Mar. 2, 2009, and International Application Number PCT/US2009/001358 which is hereby incorporate by reference. -
FIG. 4 is a block diagram of a configuration for atunable filter module 130 including tunable resonators according to various embodiments. Thefilter module 130 may have a common circuit board ormodule 132, a resonance or AW board ormodule 150, and electrical component board ormodule 140. TheAW module 150 may include two or more resonators orAW AW configuration 90A shown inFIG. 2A . TheAW module 150 may further include a bias AW 80I. - The electrical component board or
module 140 may include threetunable capacitors control logic module 146, and anoscillator 144. Eachtunable capacitor AW conductance lines 134 between themodules AW 80A and atunable capacitor 98A may form atunable AW module 96A as shown inFIG. 2B . Theoscillator 144 may be coupled to the bias AW 80I via aconductance line 134. The effective resonate frequency of the bias AW 80I may modulate the oscillation of theoscillator 144 in a known and measurable way. - The
control logic module 146 may receive control signals SPI for controlling the capacitance oftunable capacitors oscillator 144 frequency may vary as the AW 80I resonate or anti-resonate frequencies fluctuate with temperature. Thecontrol logic 146 may monitor the change ofoscillator frequency 144 via the stable reference frequency signal. Thecontrol logic 146 may then modulate the tunable capacitor's capacitance based on known deltas to account for the oscillator frequency and thereby correspondingAW AW -
FIG. 5A is a block diagram of an electricalsignal filter module 190A including switchable resonator modules (SRM) according to various embodiments. Themodule 190A includes three switchable resonators modules (SRM) 180A, 180B, and 180C,resistors signal generator 92A. In an embodiment thesignal generator 92A may represent a TX signal to be communicated via anantenna 50, theresistor 94A may represent the load of the TX signal, and theresistor 94B may represent the load of anantenna 50. In an embodiment the switchable resonators modules (SRM) 180A, 180B, 180C may form a T-shape between the signal to be transmitted and the antenna (source load 94A andantenna load 94B). The switchable resonators modules (SRM) 180A, 180B, 180C may include one or more resonator devices or modules where one or more of the modules may include switchable resonators. The one or more resonators may have a fixed resonate frequency and anti-resonate frequency similar to a pass band and stop band of a common inductor-capacitor type filter. -
FIG. 5B to 5D are block diagrams ofSRM 184A to 184C according to various embodiments. As shown inFIGS. 5B to 5D , aresonator module resonators 82A to 82N where theresonators 82A to 82N may be bypassed or activated via one ormore switches 182A to 182N. - In
FIG. 5B a switchable resonator module (SRM) 184A may include tworesonators switches resonators switch resonator switch resonator switch resonator switch resonator switches signal state switch 182A is open andswitch 182B is closed and in a secondsignal state switch 182A is closed andswitch 182B is open. - In
FIG. 5C the switchable resonator module (SRM) 184B includes threeresonators switches resonators switch resonator switch corresponding resonator switch resonator switch resonators - In
FIG. 5D the switchable resonator module (SRM) 184C includes a plurality ofresonators 82A to 82N andcorresponding switches 182A to 182N. Theresonators 82A to 82N may be coupled in series. Aswitch 182A to 182N may be coupled in parallel to eachresonator 82A to 82N, respectively. When aswitch 182A to 182N is closed thecorresponding resonator 82A to 82N may be bypassed and inoperative. Similarly, when aswitch 182A to 182N is open thecorresponding resonator 82A to 82N may be active. Eachswitch 182A to 182N may be controlled by a control signal S1A to S1N. In an embodiment, theresonators -
FIG. 5E is a block diagram of a modulated or tunableresonator module system 190B according to various embodiments. The tunableresonator module system 190B includes severaltunable resonator modules FIG. 5A . Eachtunable resonator module variable capacitor SRM tunable modulator variable capacitor active resonators 82A to 82N, 83A to 83N, and 84A to 84N based on the capacitor's selected capacitance Cv (effective capacitance Ce of an AW device may be equal to Co+Cv for amodule 196A). In an embodiment thevariable capacitor resonator 82A to 82N, 83A to 83N, and 84A to 84N not bypassed byswitches 182A to 182N, 183A to 183B, and 185A to 185N where the switches are controlled by switch control signals S1A to S1N, S2A to S2N, and S3A to S3N. - In an embodiment each
resonator 82A to 82N, 83A to 83N, and 84A to 84N may have a different resonance in eachrespective SRM SRM system 190B to tune to different channels (different resonance frequencies) as shown inFIGS. 6A to 6F forfrequency responses 197A to 197F. In an embodiment thevariable capacitor SRM active resonators 82A to 82N, 83A to 83N respectively. By selectively bypassingresonators 82A to 82N and 83A to 83N in theSRM system 190B may be tuned in addition to the stop bands. - In an embodiment control signals SxN in each corresponding
SRM modules switch 182A to 182N, 183A to 183N, 185A, to 185N may be open at any time so only oneresonator 82A to 82N, 83A to 83N, 84A, to 84N is active at any time. In an embodiment thevariable capacitor 98C in parallel with theSRM 184F may only module or tune the resonate wr of theactive resonators 82A to 82N, 83A to 83N respectively. By selectively bypassingresonators 84A to 84N, the anti-resonate frequency or effective pass-bands of theSRM 196C may be tuned in addition to the stop bands. -
FIG. 5F is similar toFIG. 5E except thetunable module 196C is replaced by themodule 96G described with respect toFIGS. 2E and 21 . Themodule 96G may include avariable capacitor 98G in parallel with anAW 80G and avariable capacitor 98H in series with theAW 80G. Accordingly, the anti-resonate wa of 96G may be modulated by thevariable capacitor 98G having a capacitance Cv1 and thevariable capacitor 98H having a capacitance Cv2. Similarly, the resonate wr may be modulated by thevariable capacitor 98H having the capacitance Cv2. Capacitor 98H may be subject to high voltages. -
FIG. 5G is a block diagram of a modulatedfilter system 190C similar toFIG. 2D where thetunable resonators variable capacitors variable capacitors 98I and 98J may modulate or tune the resonate frequencies of theresonators system 190C to tune different pass-bands and stop-bands as a function of thetunable capacitors tunable capacitors 98I, 98J in series with theresonators resonator 80A to 80H shown inFIG. 2A to 2H may be replaced by aSRM FIG. 5B to 5D . - In an embodiment it may be desirable to increase the isolation and stop-band rejection of a filter module.
FIG. 7A is a block diagram of afilter module 202A according to various embodiments. Thefilter module 202A includes aninductor 204A andcapacitor 206A in series coupled in parallel to anotherinductor 204B andcapacitor 206B in series. Theinductors capacitors filter module 202A may have two pass bands at w1 and w2 surrounding a rejection point at wt. The rejection point may be limited by the quality, Q of thefilter module 202A. In thefilter module 202A the pass bands may be determined by the equations: -
- The impedance of the
filter module 202A may be determined by the equation -
- As noted with reference to
FIG. 2B , anAW 80A may include aninductor 86A in series with acapacitor 82B with an inductance Lm and capacitance Cm, respectively. Theresistor 84A andcapacitor 82A may be nominal as a function of theinductor 86A andcapacitor 82B. Accordingly, in an embodiment thefilter module 202A may be represented by the parallel coupling of anAW filter module 212A shownFIG. 7B ). In this embodiment theacoustic wave module 214A may represent theinductor 204A andcapacitor 206A and theAW module 214B may represent theinductor 204B andcapacitor 206B offilter module 202A. - The elasticity and inertia of an
AW AW AW - In an embodiment two or more inductor-capacitor filter modules (LCF) 202A, 202B, in series with a low
resistive switch FIG. 8A ,filter module 208A. Theswitch 205A may include one or more CMOS or MOSFET devices that have a low resistance when closed (as a function of a control signal S1A, S1B). In an embodiment theLCF 202A may have a first desired pass-band and stop-band and theLCF 202B may have a second desired pass-band and stop-band. Via the control signals S1A, S2A a signal may be processed by either theLCF 202A or theLCF 202B of thefilter module 208A. Because themodules single switch filter module - In an embodiment it may be desirable to process signals with larger voltage or limit circuit elements. The
LCF filter module 208A may be replaced by acoustic wave filters (AWF) 212A, 212B as shown inFIG. 8B ,filter module 222. EachAWF more AW modules FIG. 7B . As noted avariable capacitor 218A may be coupled in parallel in with AW device(s) or module(s) to provide adjustments for process variations in the AW device(s) or module(s) variations due to temperature, and enable shifting of pass-band or stop-bands of the device(s). As shown in thefilter module 224 ofFIG. 8C , avariable capacitor 218A may also be placed in parallel with one ormore AWF filter module 224, thecapacitor 218A capacitance may be varied as a function of theswitch AWF 212A or theAWF 212B. -
FIG. 9B is a block diagram offilter module 230A according to various embodiments. Thefilter module 230A may include a first capacitive-tunable, parallel switchedAW module filter 232A, a second capacitive-tunable, parallel switchedAW module filter 232B, a first capacitive-tunable parallel switchedAWF module filter 224A, a capacitive-tunable AW module 234A, andimpedance inversion modules module 232A may be coupled to themodule 232B via theinversion module 228A and themodule 232B may be coupled to themodule 224A via theinversion module 228B. Themodule 234A may be coupled to ground and themodule 232A. - In an embodiment the first capacitive-tunable, parallel switched
AW module filter 232A may includeAW modules variable capacitor 218A.AW module 214A is series coupled to switch 216A andAW module 214B is series coupled to switch 216B. Each module,switch pair variable capacitor 218A. Similarly, the second capacitive-tunable, parallel switchedAW module filter 232B may includeAW modules variable capacitor 218B.AW module 214C is series coupled to switch 216C andAW module 214D is series coupled to switch 216D. Each module,switch pair variable capacitor 218B. - The capacitive-tunable, parallel switched
AWF module filter 224A may includeAWF modules variable capacitor 218C.AWF module 212A is series coupled to switch 216E andAWF module 212B is series coupled to switch 216F. Each module,switch pair variable capacitor 218C. EachAWF module AW modules tunable AW module 234A includes anAW module 214G coupled in parallel to avariable capacitor 218D. - In an embodiment the
inversion module filter 228 as shown inFIG. 9A . Thefilter 228 includes twocapacitors third capacitor 226C in parallel and between theseries pair capacitors capacitor 226C has a capacitance of +C. As shown in theFIG. 9B , thecapacitor 226C of theinversion modules - In an embodiment the
module 234A may provide a fixed high rejection and tunable pass-band, themodules module 224A may provide a movable, switchable high rejection point and pass-band. Thefilter module 230A ofFIG. 9B may be employed to generate thefrequency responses FIGS. 10A, 10B where the control signals S1A, S1C, S1E may be active, inactive while the control signals S1B, S1D, S1F may be inactive, active, respectively to shift the pass-bands and stop or rejection bands shown inFIGS. 10A, 10B (240A, 240B). In anembodiment 230B shown inFIG. 9C theinversion modules FIG. 9B may be replaced by one ormore capacitors -
FIG. 11 is a diagram offilter frequency responses 250 according to various embodiments.FIG. 11 depicts afirst frequency response 258B and asecond frequency response 258A. In an embodiment afilter response passband 261 with apassband edge 262 andstopband 263. Further afilter response acceptable loss 252 in the passband area 261 (creating the passband edge 262) and a minimum attenuation orrejection 256 in thestopband 263. Further the minimum attenuation orrejection 256 in thestopband 263 may need to be achieved by aparticular frequency 254 such a channel boundary or cutoff frequency. In an embodiment a filter mechanism or module such asresonator module 292B ofFIG. 13B may produce afirst frequency response 258B during ideal operation and fabrication conditions. Thesame filter module 292B may generate the shiftedfrequency response 258A due to non-ideal operation or fabrication conditions. In an embodiment the frequency response shift from 258B to 258A may be due to temperature fluctuations and fabrication variations. - Given the
potential filter module 292B frequency response shift (from 258B to 258A), thepassband 261 region or width of a signal processed by thefilter module 292B may be narrowed or reduced to ensure that the minimum requiredattenuation 256 is achieved by a requiredfrequency 254. The requiredfrequency 254 may be the start of another channel and thefilter module 292B may be required to prevent signal leakage into adjacent channels. The distance between thechannel boundary 254 andpassband edge 262 is commonly termed the guard band of a filter or channel. In a system or architecture such aschannel architecture FIG. 15A, 15B, 15C the guard band (316B inFIG. 15B and 318B inFIG. 15C ) represents lost or unusable bandwidth. Accordingly it may be desirable to minimize theguard band -
FIG. 12 is a flow diagram of afilter configuration method 270 according to various embodiments. In themethod 270 themaximum passband loss 252 may be selected where this loss level may be required or indicated (by a standard or other communication protocol establishment organization) (activity 272). The filter response stopbandminimum attenuation 256 needed to reduce or limit signal leakage into adjacent channels may be selected where the minimum attenuation may be required or indicated (by a standard or other communication protocol establishment organization) (activity 274). Further theminimum stopband edge 254 for theminimum attenuation 256 may also be selected where theminimum stopband edge 254 may be required or indicated (by a standard or other communication protocol establishment organization) (activity 276). - In the
method 270 theminimum stopband edge 254 of anon-tunable filter 292B may be pre-shifted to ensure thefilter response 258B when shifted due to temperature or process variations achieves theminimum attenuation 256 by the desired or required boundary or edge 254 (activity 278). Further, thefilter passband 262 edge may also be shifted, effectively reducing the usable signal bandwidth to ensure less than themaximum loss 252 is present in the passband (activity 282). Accordingly theeffective guard band -
FIG. 13A is a simplified block diagram of afiltering architecture 290A according to various embodiments. The filter architecture includes afilter 292A coupled in series with atunable filter 294A. In an embodiment thefilter 292A may have a desired frequency response shown as 258A shown inFIG. 11 but be subject to temperature or process variations where the fixedfilter 292A frequency response may shift to thefilter response 300A shown inFIG. 14A . Such a worstcase frequency response 302A may be unacceptable due to potential signal leakage beyond the desired channel orsignal boundary 254. Thefrequency response 302A otherwise has stable passband andstopband 304A. - The
tunable filter 294A may have a tunable frequency response such asmodule 294B shown inFIG. 13B where temperature and process variations are corrected or modulated by an adjustable element such as atunable capacitor 218A. Thetunable filter 294A may have afrequency response 300B inFIG. 14B . As shown inFIG. 14B thefrequency response 302B may achieve the desired or requiredmaximum passband loss 252 with anedge 262 than is greater in frequency than thefilter 302A (when adjusted to account for potential shifts) and correspondingly a smaller neededguard band filter response 302B fortunable filter 294A may also meet theminimum attenuation 256 by the frequency boundary 254 (point 303B inFIG. 14B ). Thetunable filter 294A filterresponse 302B may have a second,unacceptable passband 304B within theadjacent channel 305 and thus be unacceptable as a single filter. - In an embodiment the
filter module tunable filter frequency response 300C shown inFIG. 14C . As shown inFIG. 14C thenet frequency response 300C may include the desirable stopband offilter 294A, B without thesubsequent passband 304B due thefilter 292A,B stopband 304A. Further, while thefilter 292A,B stopband edge 303A may vary with temperature and process variations it is sufficient to suppress thefilter 294A, B undesirablesecond passband 304B. Theresultant frequency response 300C may have anacceptable passband loss 252 andminimum stopband attenuation 256 by the desired boundary orfrequency cutoff 254 without temperature and process variations. -
FIG. 13B is a block diagram of afilter architecture 290B including a modulated ortunable resonator module 294B and aresonator module 292B according to various embodiments. Theresonator module 292B may be a non-tunable filter that may be configured to a frequency response similar tofrequency response 300A shown inFIG. 14A . Theresonator module 292B may include surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices where the device enables the transduction of acoustic waves. In an acoustic wave device electrical energy is transduced to mechanical energy back to electrical energy via piezoelectric materials. The piezoelectric materials may include quartz, lithium niobate, lithium tantalate, and lanthanum gallium silicate. One or more transverse fingers of conductive elements may be placed in the piezoelectric materials to convert electrical energy to mechanical energy and back to electrical energy. - In an embodiment the
tunable resonator 294B may include one or more acoustic wave modules ordevices tunable capacitor 218A. TheAW modules tunable capacitor 218A may be coupled in parallel in an embodiment as shown inFIG. 13B . As noted this configuration may have two pass bands at w1 and w2 surrounding a rejection point at wt. The pass bands at w1 and w2 may correspond to filterresponse components FIG. 14B and the rejection point at wt may correspond to thecomponent 303B. Thevariable capacitor 218A coupled in parallel with theAW modules filter module 294 B frequency response 300B to correct for temperature or process variations. Other resonator filters such as shown inFIGS. 2A to 2H ,FIG. 4 ,FIGS. 5A to 5G ,FIGS. 7B to 8C , andFIGS. 9B-9C may be employed in whole or part as a tunable resonator or filter 294B. - The
filter architecture 290A may be modified such as shown inFIGS. 16A, 16B, 16C, and 16D for different filter requirements or parameters. As shown inFIG. 16A , thefilter architecture 330A may include a switchable andtunable filter module 334A. Such amodule 334A and resulting architecture (and switchable frequency response) may be employed in communication architectures requiring varying filters to process one or more signals. As shown inFIG. 16B , a switchable,tunable filtering architecture 330B may include a first switchabletunable filter module 335A and a second switchabletunable filter module 335B. Eachmodule filter module module 292B (FIG. 13B ). Each switchable,tunable module AWF 212A,AWF 212B, switch pairs 216E, 217E and 216F, 217F, and aAWF - Each
AWF module AW modules variable capacitor AW modules tunable modules AWF module 96C located between theAW AWF AW module tunable capacitor AW module tunable module AWF module tunable architecture 330B may operate in two modes: mode 1 (switchpair switch pair frequency responses FIGS. 17A and 17B may combine to createresponse 320C shown in 17C) and mode 2 (switchpair switch pair frequency response FIGS. 17D and 17E may combine to createresponse 320F shown in 17F. - The
AW module frequency response FIG. 17A ,FIG. 17D , respectively. When thisfrequency response frequency response mode 1 320B—FIG. 17B or tunable AW module's 335B,mode 2 320D—FIG. 17E , the resultant frequency response may be combinedmode 1 320C—FIG. 17C ormode 2 320F—FIG. 17F . Such a switchable,tunable filter architecture FIGS. 15A to 15C . TheAWF AW - In the
channel configuration 310A shown inFIG. 15A a time division multiplex (TDD)band 38 is located between a transmit channel ofband 7 and a receive channel ofband 7. In anembodiment band 7 may be frequency division duplex (FDD) spectrum of a long term evolution (LTE) system andband 38 may be TDD spectrum of the LTE system or architecture. In the combined LTE FDD,TDD spectrum band 38spectrum 314A may be sandwiched betweenband 7'sspectrum 312Aband 38 is transmitting (as shown inconfiguration 310B shown inFIG. 15B )band 38 should not leak intoRX band 7 312B. Inband 38 transmitmode 310B,mode 1 of thefilter architecture 330B may be employed to generate thefrequency response 320C shown inFIG. 17C . - In
channel configuration 310B duringband 38 transmit mode, aguard band 316B may be located betweenband 38's transmit section orpassband 316A andband 7's receiveband 312B. Inmode 1 thefilter architecture 330B may generate thefrequency response 320C shown inFIG. 17C where thestopband 324A is located in theguard band 316B. Whenband 38 receive mode (FIG. 15C, 310C ), theband 7 transmitchannel 312A may interfere with theband 38 receivechannel 318A. In such a configuration thefilter architecture 330B ofFIG. 16B may operate in the second mode (mode 2) to generate thefrequency response 320F shown inFIG. 17F . Thefrequency 324B may be located in theresponse 320F stopbandguard band 318B whenband 38 is in receive mode. Thearchitecture 330B shown inFIG. 16B may reduce theguard band size band 38 in the embodiment shown inFIGS. 15A to 15C ). - Another
filter embodiment 330C is shown inFIG. 16C .Filter 330C includes a first, tunableswitchable filter module 334C and a second, tunableswitchable filter module 334D serially coupled. The first, tunableswitchable filter module 334C may include afirst resonator 332B, a firsttunable resonator 212A, a first, groundedtunable resonator 96C, and a firstopposite switch pair switch 217E, thefirst resonator 332B, and the firsttunable resonator 212A may be serially coupled together and the serial group (217E, 332B, 212A) may be coupled in parallel to theswitch 216E. TheAWF module 96C may be located between theAW AWF 96C may include anAW module 80C and atunable capacitor 98C coupled in parallel to theAW module 80C. - Similarly, the second, tunable
switchable filter module 334D may include asecond resonator 332C, a secondtunable resonator 212B, a second, groundedtunable resonator 96F, and a secondopposite switch pair switch 217F, thesecond resonator 332C, and the secondtunable resonator 212B may be serially coupled together and the serial group (217F, 332C, 212B) may be coupled in parallel to theswitch 216F. TheAWF module 96F may be located between theAW AWF 96F may include anAW module 80F and atunable capacitor 98F coupled in parallel to theAW module 80F. - The
filter module 334C, when active (switch 216E open, switch 217E closed, switch 216F closed, switch 217F open (mode 1)) may produce thefrequency response 320C shown inFIG. 17C . Thefilter module 334D, when active (switch 216E closed, switch 217E open,switch 216F open, switch 217F closed (mode 2)) may produce thefrequency response 320F shown inFIG. 17F . In another mode,mode 3switches filter modules frequency response 320G shown inFIG. 17G . Such a frequency response may be employed to protect bands on either side of the combined filter, such asband 7 transmit 312A and receive 312B shown inFIG. 15A . TheAWF 96C may provide an additional stop band as a function of theAW 80C configuration. - The filter system or
architecture 330C may have an unacceptable insertion loss inmode open switches filter architecture 330 D enabling modes FIG. 16D . As shown inFIG. 16D , thefilter architecture 334E includes afirst filter module 336A, asecond filter module 336B, and athird filter module 336C, all coupled in parallel to each other. Thefirst filter module 336A includes afirst resonator 332B, afirst AWF 212A, a first, groundedAWF 96C, and aswitch pair frequency response 320C shown inFIG. 17C (mode 1—switch pair switch pair switch pair - The
second filter module 336B includes asecond resonator 332C, asecond AWF 212B, a second, groundedAWF 96F, and aswitch pair frequency response 320F shown inFIG. 17F (mode 2 —switch pair switch pair switch pair third filter module 336C may include thefirst resonator 332B, thefirst AWF 212A, thesecond resonator 332C, thesecond AWF 212B, the first, groundedAWF 96C, the second, groundedAWF 96F, and theswitch pair mode 3, the combinedresonators frequency response 320G shown inFIG. 17G . - A
signal processing architecture 330E is shown inFIG. 16E . Thearchitecture 330E may include afirst filter system 215A, asecond filter system 215B, a twoposition switch 216H, a power amplifier (PA) 12, a low noise amplifier (LNA) 14, anantenna 50, and amixer 60A. Asignal 8 to be transmitted viaantenna 50 may be amplified byPA 12 to produce an amplifiedsignal 22. The resultant amplifiedsignal 22 may include signal content beyond the desired or permitted transmission bandwidth such asband 38 transmitchannel 316A shown inFIG. 15B . Theresultant signal 22 may filtered by thefilter system 215A. Thefilter system 215A may include thefirst resonator module 332B, a first groundedresonator module 96C (including aresonator 80C and atunable capacitor 98C), and a first parallel resonator module (includingresonator tunable capacitor 218C). In an embodiment thefirst filter system 215A may generate thefrequency response 320C shown inFIG. 17C . - The filtered, amplified signal may be coupled to the
antenna 50 via theswitch 216H. Similarly asignal 42 received on theantenna 50 may be filtered by thesecond filter system 215B. Thefilter system 215B may include thesecond resonator module 332C, a second groundedresonator module 96F (including aresonator 80F and atunable capacitor 98F) and a second parallel resonator module (includingresonator tunable capacitor 218D). In an embodiment thesecond filter system 215B may generate thefrequency response 320F shown inFIG. 17F . The resultant filtered, received signal may be amplified by theLNA 14. The amplified, filtered, received signal may be shifted to another center frequency (such as base-band) via themixer 60A and areference frequency signal 60B to generate the frequency shifted, amplified, filtered, receivedsignal 60C. Thefilter architecture 330E may be employed in a TDD communication system such asband 38 in an LTE spectrum in an embodiment. - In an embodiment the
method 340 shown inFIG. 18 may be employed configure afilter architecture FIGS. 13A, 13B, and 16A-16E , respectively. Inmethod 340 the maximum insertion loss (passband maximum loss) 252 may be selected (as required or indicated) (activity 342). The stopband minimum edge(s) 254 may then be selected (as required or indicated) (activity 344). Similarly the minimal attenuation for the stopband edge may also be selected (as required or indicated) 256 (activity 346). Based on theserequirements tunable resonator filter point 254 and having at least theminimum attenuation 256 while meeting themaximum passband loss 252 requirement (activity 348). Aresonator filter initial stopband 254 with theminimum attenuation 256 and themaximum passband loss 252 based on the potential temperature and process variation of the filter (activity 352).Activities -
FIG. 19A is a block diagram of an electricalsignal filter module 360 A including resonators filter frequency responses resonators resonator FIGS. 2B, 20A, 20B . As shown inFIG. 2B, 20A, 20B , aresonator first capacitor inductor second capacitor resistor capacitors inductors resistors - The values of CMA, CMB, CMC and LMA, LMB, LMC may be related to the elasticity and inertia of an
AW AW AW first capacitor 81A, theinductor 86A, thesecond capacitor 82B, and theresistor 84A forresonator 80A, the resonance wr and the anti-resonance wa of the acoustic wave (AW)device 80A may be defined by the following equations: -
- Using these equations the
AW 80A may form thefrequency response 362A shown inFIG. 19A , the response similar to a low pass filter with a pass band about the resonate frequency, fr1 and stop band about the anti-resonance fa1. Similarly, theAW 80B may form thefrequency response 362B shown inFIG. 19A , the response similar to a low pass filter with a pass band about the resonate frequency, fr2 and stop band about the anti-resonance fa2. TheAW 80C may form a short path and itsfrequency response 362C shown inFIG. 19A may be similar to a high pass filter with a pass band about the anti-resonance fa3 and stop band about the resonate frequency, fr3. It is noted that theresonator AW AW devices AW device devices -
FIG. 19B is a diagram offilter frequency responses signal filter module 360 A including resonators FIG. 19A in a first, pass-band filter configuration 364A having a center frequency fc according to various embodiments.FIG. 19D is a diagram of the effective combination offilter frequency responses signal filter module 360 A including resonators FIG. 19A in the first, pass-band filter configuration 364C having a center frequency fc according to various embodiments. - In
FIGS. 19B and 19D theAW device 80 A frequency response 362A resonate frequency, fr1 may be configured to be greater than G of thefilter 364A and accordingly its stop band about the anti-resonance fa1 also greater than G of thefilter 364A and its resonate frequency, fr1. Similarly, theAW device 80 B frequency response 362B resonate frequency, fr2 may be configured to be greater than G of thefilter 364A and theAW device 80 A frequency response 362A resonate frequency, fr1. TheAW device 80B stop band about its anti-resonance fa2 may also be greater than G of thefilter 364A, its resonate frequency, fr2 and theAW device 80A resonate frequency, fr1 and anti-resonate frequency, L1. The shortpart AW device 80 C frequency response 362C anti-resonate frequency, fa3 may be configured to be less than G of thefilter 364A and accordingly its stop band about the resonance fr3 also less than G of thefilter 364A and its anti-resonate frequency, fa3. As shown inFIG. 19D the effective combination of theAW devices frequency responses FIG. 19B (based on the AW devices physical characteristics) may form theband pass filter 364C withbandwidth 366A. -
FIG. 19C is a diagram offilter frequency responses signal filter module 360 A including resonators FIG. 19A in anotch filter configuration 364B having a center frequency fc according to various embodiments.FIG. 19E is a diagram of the effective combination offilter frequency responses signal filter module 360 A including resonators FIG. 19A in the notch filter configuration 364E having a center frequency fc according to various embodiments. - In
FIGS. 19C and 19E theAW device 80 A frequency response 362A anti-resonate stop-band frequency, fa1 may be configured to be less than G of thefilter 364A and accordingly its pass band about the resonance fr1 also less than G of thefilter 364A and its anti-resonate frequency, fa1. TheAW device 80 B frequency response 362B anti-resonate frequency, fa2 may be configured to be about the center frequency, G of thefilter 364B and greater than theAW device 80 A frequency response 362A anti-resonate frequency, fa1. TheAW device 80B pass band about its resonance fr2 may also be less than G of thefilter 364B, its anti-resonate frequency, fat and theAW device 80A anti-resonate frequency, L1.The AW device 80B pass band about its resonance fr2 may be greater theAW device 80A resonate frequency, fr1. - The short
part AW device 80 C frequency response 362C stop-band resonate frequency, fr3 may be configured to be greater than G of thefilter 364A and accordingly its pass-band about the anti-resonance fa3 also greater than G of thefilter 364A and its resonate frequency, fr3. As shown inFIG. 19E the effective combination of theAW devices frequency responses FIG. 19C (based on the AW devices physical characteristics) may form thenotch filter 364D withbandwidth 366B. -
FIG. 21A is a block diagram of a tunable electricalsignal filter module 380 A including resonators variable capacitors filter frequency responses resonators variable capacitor 98A may be coupled in parallel to theAW device 80A. Thevariable capacitor 98C may be coupled in series with theAW device 80C. Thevariable capacitor 98D may be coupled in series with theAW device 80D. TheAW device 80C coupled in series with thevariable capacitor 98C may form a first short path. TheAW device 80D coupled in series with thevariable capacitor 98D may form a second short path. - Similar to
FIG. 19A theAW 80A may form thefrequency response 362A shown inFIG. 21A , the response similar to a low pass filter with a pass band about the resonate frequency, fr1 and stop band about the anti-resonance fa1. TheAW 80C may form a short path and itsfrequency response 362C shown inFIG. 21A may be similar to a high pass filter with a pass band about its anti-resonance fa3 and a stop band about its resonate frequency, fr3. TheAW 80D may also form a short path and itsfrequency response 362D shown inFIG. 21A may be similar to a high pass filter with a pass band about its anti-resonance fa4 and a stop band about its resonate frequency, fr4. - It is noted that the
resonator AW devices AW devices variable capacitors device AW device devices -
FIG. 21B is a diagram offilter frequency responses signal filter module 380A (FIG. 21A ) includingresonators FIG. 21A in anotch filter configuration 380B having a center frequency fc according to various embodiments.FIG. 21C is a diagram of theeffective combination 380C offilter frequency responses signal filter module 380 A including resonators notch configuration 380C having a center frequency fc andbandwidth 386C according to various embodiments. - In
FIGS. 21B and 21C theAW device 80 A frequency response 362A anti-resonate stop-band frequency, fa1 may be configured to be less than G of thefilter 380B and accordingly its pass band about the resonance fr1 also less than G of thefilter 380B and its anti-resonate frequency, fa1. The shortpart AW device 80 C frequency response 362C stop-band resonate frequency, fr3 may be configured to be about the G of thefilter 380A and accordingly its pass-band about the anti-resonance fa3 greater than G of thefilter 380A and its resonate frequency, fr3. The second shortpart AW device 80 D frequency response 362D stop-band resonate frequency, fr4 may be configured to be greater than the G of thefilter 380A and accordingly its pass-band about the anti-resonance fa3 greater than G of thefilter 380A and its resonate frequency, fr3. As shown inFIG. 21C the effective combination of theAW devices frequency responses FIG. 21C (based on the AW devices physical characteristics) may form thenotch filter 380C withbandwidth 386C. -
FIG. 20A is a block diagram of atunable filter module 370A including electrical elements representing the characteristics oftunable resonators FIG. 20A , thefilter module 370A may includeAW devices variable capacitors generator 92A,resistors 94A representing an input load, and aresistor 94B representing an antenna load. Thevariable capacitor 98A may be coupled in parallel to theAW device 80A. Thevariable capacitor 98B may be coupled in parallel to theAW device 80B. Thevariable capacitor 98C may be coupled in series with theAW device 80C. - As shown in 20A a
resonator first capacitor inductor second capacitor resistor capacitors inductors resistors AW devices pass 364C ofFIG. 19D and notch 364D ofFIG. 19E ). In order for thevariable capacitors corresponding AW device AW devices - A
variable capacitor filter 370A including thecapacitors filter 364D ofFIG. 19E may have a center frequency of about 800 MHz. TheAW AW devices AW devices variable capacitors - In an embodiment, the
AW device 80A may be similar to theAW device 80B. In this embodiment thevariable capacitor 98A may also be similar to thevariable capacitor 98B. As shown inFIG. 20B a singlevariable capacitor 98D may be used to effectively tune both theAW device 80A and theAW device 80B. In thefilter module 370B, thevariable capacitor 98D is coupled in parallel to the serial coupledAW devices 80A, 80. Using thefilter module 370B ofFIG. 20B , theAW AW devices AW devices filter 370B, the 98D and 98C capacitance range may need to be about 2-4 pF and 2.5-3.3 pF in an embodiment, a substantial reduction in capacitance relative to thecapacitors filter module 370A ofFIG. 20A . The filter module orconfiguration 370B ofFIG. 20B may lower the insertion loss of the filter and improved the Q of thefilter module 370B. In an embodiment theAW devices - As noted above an acoustic wave (AW) device such as 80A, 80B, 80C shown in
FIG. 4 , resonate and anti-resonate frequencies fr0, fa0 may vary due to manufacturing variants and operating temperature. In addition a variable capacitor such as device such as 98A, 98B, 98C shown inFIG. 4 , selected or variable capacitance cx0 m (where x is variable capacitance selection x) may vary due to manufacturing variants and operating temperature. In an embodiment, a system such as 430 shown inFIG. 23 may adjust one or more variablecapacitors tuning signals AW devices variable capacitors system 430 near theAW modules - In an embodiment a
temperature sensor module 444A electrically coupled to acontact 444B near theAW modules AW modules control logic module 446 may use the calculated temperature and known manufacturing variants for thesystem 430 components to control or modulate one or morevariable capacitors control signals - In an embodiment the
AW modules control logic module 446 may determine the differential between the AW modules' 98A, 98B, 98C nominal operating temperature and the calculated or determined environmental temperature. An AW modules' 98A, 98B, 98C nominal operating temperature may be stored in the PROM 448 (FIG. 23 ). Further a SPI signal may provide desired settings for thevariable capacitors control logic module 446 may adjust the SPI based settings for thevariable capacitors system 430 components. - In an embodiment a programmable read only memory (PROM) 448 may include manufacturing variance characteristics for one or
more components 80A to 80C and 98A to 98C of thesystem 430. The PROM 448 characteristics may include the possible resonate and anti-resonate frequencies fr0, fa0 for eachAW module 80A to 80C or a delta between the optimal or normal resonate and anti-resonate frequencies fr0, fa0 and the probable resonate and anti-resonate frequencies fr0, fa0 for eachAW module 80A to 80C. Thecontrol logic module 446 may use the delta or differential frequency or probable frequency for eachAW module 80A to 80C to calculate a desired correction to be achieved by modulating a correspondingvariable capacitor 98A to 98C. -
FIG. 22A is a diagram of a resonant frequency fr0 probably function Pr(f) 392A representing manufacturing variations for an acoustic wave (AW) module according to various embodiments.FIG. 22B is a diagram of an anti-resonant frequency fa0 probably function Pa(f) 392B representing manufacturing variations for an acoustic wave (AW) module according to various embodiments.FIG. 22D is a diagram of a capacitance per unit area co probably function Pc(f) 392D representing manufacturing variations for a capacitor module according to various embodiments. In an embodiment the PROM 448 may include data representing each Pr(f) 392A, Pa(f) 392B, Pc(f) 392C including the measured standard deviation Afro, Δfa0, Δfc0 for eachfunction 392A to 392C where the functions are approximately Gaussian in nature (as measured or sampled). - In an embodiment a programmable read only memory (PROM) 448 may also include temperature variance characteristics for one or
more components 80A to 80C of thesystem 430. The PROM 448 characteristics may include the possible resonate and anti-resonate frequencies fr0, fa0 for eachAW module 80A to 80C or a delta between the optimal or normal resonate and anti-resonate frequencies fr0, fa0 and the probable resonate and anti-resonate frequencies fr0, fa0 for eachAW module 80A to 80C based on temperature. Thecontrol logic module 446 may use the temperature delta or differential frequency or probable frequency for eachAW module 80A to 80C to calculate a desired correction to be achieved by modulating a correspondingvariable capacitor 98A to 98C. - In an embodiment the resonant and
anti-resonant frequency variation 392C for anAW module 80A to 80C may be linear as shown inFIG. 22C . As shown inFIG. 22C for a positive temperature delta ΔT0 from a nominal temperature (such as room temperature), anAW module 80A to 80C resonant or anti-resonant frequency may be reduced by a predetermined number based on the slope of thetemperature function 392C and magnitude of the temperature delta ΔT0. Similarly, as shown inFIG. 22C for a negative temperature delta −ΔT0 from a nominal temperature (such as room temperature), anAW module 80A to 80C resonant or anti-resonant frequency may be increased by a predetermined number based on the slope of thetemperature function 392C and magnitude of the negative temperature delta −ΔT0. - In an embodiment the
control logic module 446 may combine manufacturing variation deltas and temperature variation deltas provided by the PROM 448 for acomponent 80A to 80C to determine or calculate an overall delta or correction for correspondingvariable capacitor 98A to 98C. In a further embodiment thecontrol logic module 446 may combine manufacturing variation deltas and temperature variation deltas provided by the PROM 448 for acomponent 80A to 80C and a manufacturing variation deltas provided by the PROM 448 for a correspondingvariable capacitor 98A to 98C to determine or calculate an overall delta or correction for the correspondingvariable capacitor 98A to 98C. - In an embodiment the PROM 448 data may be updatable via one or more methods. In such an embodiment the PROM 448 characteristic data for temperature or manufacturing variants for one or
more components 80A to 80C may be updated based on measured response or updated component testing. Similarly characteristic data for manufacturing variants for one ormore capacitors 98A to 98C may be updated based on measured response or updated component testing. In an embodiment thesystem 430control logic module 446 may include memory for storing temperature and manufacturing characteristics forcomponents 80A to 80C and manufacturing characteristics forcomponents 98A to 98C. - In order to produce
AW modules 80A to 80C orvariable capacitors 98A to 98C or other components having possible variable system characteristics due to manufacturing aprocess 400 shown inFIG. 24 may be employed.FIG. 24 is a flow diagram of a component modeling, manufacturing, and configuration method according to various embodiments. In theprocess 400 general component characteristics of anAW module 80A to 80C orvariable capacitor module 98A to 98C may be determined. In order to design and manufacture anAW module 80A to 80C orvariable capacitor module 98A to 98C having desired parameters, test devices or related modules may be produced and its characteristics evaluated (activity 402). In particular, key or critical parameters may be checked for the test devices including resonant and anti-resonant frequencies for an AW module related device and capacitance per unit area for a capacitor or series of capacitors forming a digital, variable capacitor related device. - Based on the test devices and a consistent or well behaved manufacturing process, probability curves or standard deviations for critical parameters of the test devices may be determined. In an embodiment, a Gaussian distribution may be applied and first standard deviations may be determined for each critical parameter probability function. Using correlation(s) between the test devices and an AW module or variable capacitor module to be designed and produced, probability functions (such as each Pr(f) 392A, Pa(f) 392B, Pc(f) 392C) may be determined for the AW module or variable capacitor modules.
- Based on the correlations between the test devices and resultant probability functions for critical parameters, an AW module or capacitor module may be designed (activity 404). Without compensating modules or methods as recited by the present invention, an AW module or capacitor module design parameters may be required to be loose to compensate for the manufacturing variants. Employing the AW modules or capacitors in a system 430 (with compensating modules) of the present invention may enable tighter design parameters given the ability to compensate for variants of the
system 430. In an embodiment initial, final components (AW module or capacitor modules) based on a design may be produced (activity 406). Then, the initial components based on the associated design may be tested to determine the probability characteristics for key or critical parameters (activity 408). - The determined probability characteristics for the initial final, designed components may be compared to the determined probability characteristics for the test devices. Where the characteristics are correlated as expected, larger quantities of the final, design components may be produced and randomly tested (activity 412). Where the manufacturing process and source is controlled and well-behaved only sparse or random components may need to be tested to confirm correlation to the previously determined probability functions Pr(f) 392A, Pa(f) 392B, Pc(f) 392C. For temperature sensitive components including AW modules, the temperature effects may also be modeled (activity 402) and considered during the component design (activity 404). The temperature characteristics of initial, final components may also be determined (activity 408) prior to producing higher quantities of temperature sensitive components (activity 412). In an embodiment each or batch groups of final, designed component (AW module or variable capacitor module) may be tested and resultant probability function determined for key or critical module characteristics. As noted the determined probability functions may be stored in a
system 430 employing a corresponding module (80A to 80C, 98A to 98C). - In addition to adjusting for AW modules' performance variants due manufacturing variants and operating temperature, impedances present at a
filter module 452A input or output port may affect thefilter module 452A (FIG. 25A ). In particular afilter module 452A may be designed for a particular load at its input node and a particular load at its output node. In an embodiment a differential between the target/designedload 94A on the input node or the target/designedload 94B on the output node of afilter module 452A may affect its performance.FIG. 25A is block diagram ofsignal filter architecture 450A.Architecture 450A includes afilter module 452A, aninput load 94A represented by a resistor and anoutput load 94B represented by a resistor. Thefilter module 452A may be configured to have a balanced load where theinput load impedance 94A and theoutput load impedance 94B are about equal and have a predetermined level such as 50 ohms in an embodiment. - The ratio between target loads 94A, 94B is related to the Voltage Standing Wave Ratio (VSWR) for the module. As noted, a
filter module 452A may be configured for a common VSWR of 1:1 (where theinput load 94A is about equal to theoutput load 94B). For afilter module 452A configured for a VSWR of 1:1 an input-output mismatch (VSWR other than 1:1) may result in a greater input signal insertion loss (greater filter passband loss).FIG. 25B is a block diagram of asignal filter architecture 450B including atunable filter module 452B that may be configured to reduce effects of impedance mismatches betweenloads filter module - As shown in the
FIG. 25B thesignal filter architecture 450B includes aninput load 94A, anoutput load 94B, and atunable filter module 452B. Thetunable filter module 452B includes multipletunable AW modules tunable AW module AW device variable capacitor tunable AW module 96C may be coupled to theinput load 94A and ground. One or moresub-filter modules tunable AW module 96C and theoutput load 94B. - Each
sub-filter module tunable AW module tunable AW module AW device inductor capacitor resistor capacitor variable capacitor AW device AW device - As noted previously a
variable capacitor AW device variable capacitor AW device filter model 452B was designed to process). - In an embodiment the
filter module 452B may be designed for a VSWR of about 1:1 and thevariable capacitors FIG. 26A is a diagram of the frequency response of thefilter module 452B for a VSWR of 1:1 (nominal). As shown inFIG. 26A the insertion loss (passband attenuation) is about 0.5 dB.FIG. 26B is a diagram of the frequency response of thefilter module 452B for a VSWR of 1:1.5 and one or morevariable capacitors AW device FIG. 26B the insertion loss (passband attenuation) is about 0.68 dB.FIG. 26C is a diagram of the frequency response of thefilter module 452B for a VSWR of 1:2 and one or morevariable capacitors AW device FIG. 26C the insertion loss (passband attenuation) is about 1 dB. - In another embodiment the PROM 448 of
FIG. 23 may be configured to include variable capacitor deltas for various VSWR. A user may be indicate the output load and configure the PROM 448 accordingly. In another embodiment the control logic module may sense the output load, determine the VSWR differential, and choose the closest set of variable capacitor deltas from the PROM 448. In a further embodiment afilter module 452B may be configured or designed for a nominal VSWR (median relative to possible VSWR that thefilter module 452B may experience). For example inarchitecture 450B, VSWRs of 1:1, 1:1.5 and 1:2 may be expected. Thefilter module 452B may be configured or designed to be optimal for a VSWR of 1:1.5 and thevariable capacitors AW device AW module capacitor 98C inFIG. 20A ). The variable capacitor in series with anAW module loads filter module 450B. -
FIG. 27A is a diagram of the frequency response of thefilter module 452A for a VSWR of 1:1 where thefilter module 452B is optimized for VSWR of 1:1, 1:1.5, and 1:2 and one or morevariable capacitors AW device FIG. 27A the insertion loss (passband attenuation) is about 0.65 dB.FIG. 27B is a diagram of the frequency response of thefilter module 452B for a VSWR of 1:1.5 where thefilter module 452A is optimized for VSWR of 1:1, 1:1.5, and 1:2 and one or morevariable capacitors AW device FIG. 27B the insertion loss (passband attenuation) is about 0.62 dB.FIG. 27C is a diagram of the frequency response of thefilter module 452B for a VSWR of 1:2 where thefilter module 452B is optimized for VSWR of 1:1, 1:1.5, and 1:2 and one or morevariable capacitors AW device FIG. 27C the insertion loss (passband attenuation) is about 0.69 dB. - As shown in
FIG. 26A to 26C the average insertion loss is about 0.72 dB for a system designed for a VSWR 1:1 and adjusted for VSWR of 1:1.5 and 1:2. As shown inFIG. 27A to 27C the average insertion loss is about 0.65 dB for a system optimized for a range of VSWR from 1:1 to 1:2 and adjusted for VSWR of 1:1.0, 1:1.5, and 1:2. The insertion loss of thefilter module 452B optimized for VSWR 1:1 has a lower insertion loss for VSWR 1:1 than the insertion loss for thefilter module 452B optimized for a range of VSWR from 1:1 to 1:2 (0.5 dB versus 0.65 db) even with variable capacitor modulation. Accordinglydifferent filter modules 452B for VSWR 1:1 optimization or a range of VSWR may be selected as a function of the expected range of VSWR in a system implementation and minimal acceptable insertion loss criteria. - As noted the VSWR is based on the balance between the input load and output load of a system. As shown in
FIG. 1A andFIG. 28A , apower amplifier 12 may, in part provide a load to filtermodule 452A (FIG. 28A ).Power amplifiers 12 commonly produce very low impedance. In order to provide a desired input impedance to thefilter module 452A (FIG. 28 ) or RF switch 40 (FIG. 1A ), one or more elements forming animpedance matching module 470A may be placed between thePA 12 and filter module 462A. Theimpedance matching module 470A may provide the expected impedance at the input port of a filter module 462A. When the filter module 462A is tunable and support filtering different frequency bands, thematching module 470A may not be effective for all the various operating/filtering modes of the tunable filter module 462A. -
FIG. 28A is a block diagram of afilter system architecture 460A according to various embodiments.Architecture 460A includes aPA 12, animpedance matching module 470A and a tunable/switchable filter module 462A. Theimpedance matching module 470A couples thePA 12 to the tunable/switchable filter module 462A. In an embodiment the tunable/switchable filter module 462A includes a variable capacitor control signal SPI and a band select signal. The tunable/switchable filter module 462A may produce or switch between different frequency responses to process different frequency spectrum or bands. In an embodiment, theimpedance matching module 470A may include aninductor 464A. ThePA 12 may receive power via input VDD in an embodiment. - The
inductor 464A may provide the impedance matching function of theimpedance matching module 470A. In an embodiment the inductor may be about a 2 to 3 nH inductor.FIG. 28B is a block diagram of a tunable/switchablesignal filter module 462B that may be configured to operate in multiple bands and provide impedance matching with thematching module 470A. In an embodiment thefilter module 462B may be configured to operate in evolved UMTS Terrestrial Radio Access Network e-UTRAN Long Term Evolution (LTE) bands, in particular bands 13 and 17. LTE band 13 may have a transmit band from 776 MHz to 787 MHz and a receive band from 746 MHz to 757 MHz. LTE band 17 may have a transmit band from 704 MHz to 716 MHz and a receive band from 734 MHz to 746 MHz. LTE Bands 13 and 17 are adjacent, tight bands. - As shown in the
FIG. 28B tunable/switchable filter module 462B includes multipletunable AW modules switchable AW modules Tunable AW module 476C may includeAW devices variable capacitor 98C. Thetunable AW module 476C may be coupled to theimpedance matching module 470A and ground.Tunable AW module AW device variable capacitor sub-filter modules tunable AW module 96C and theoutput load 94B. - Each
sub-filter module switchable AW module tunable AW module Tunable AW module 476A may includeAW device 80A in series with aswitch 472B coupled in parallel toAW device 80F in series with aswitch 472A, the set coupled in parallel to avariable capacitor 98A.Tunable AW module 476E may includeAW device 80H in series with aswitch 472C coupled in parallel to AW device 80I in series with aswitch 472D, the set coupled in parallel to avariable capacitor 98E. - In a first mode the
switches 474A to 474D may operate to switchAW module 80A andAW module 80H on (closed) andAW module 80F and AW module 80I off (switch open) for band 13 or 17. In a second mode theswitches 474A to 474D may operate to switchAW module 80A andAW module 80H off (switch open) andAW module 80F and AW module 80I on or active (switch closed) for the other of band 13 or 17. Thevariable capacitors AW modules variable capacitor 98A modulatesAW module variable capacitor 98E modulatesAW module 80H or 80I (is shared). - The
variable capacitor 98C may be modulated to provide impedance matching between thefilter module 462B and theimpedance matching module 470A.FIG. 29A is a diagram of the frequency response of the tunable/switchable filter module 462B operating in a first mode to pass signals for LTE band 17 in an embodiment.FIG. 29B is a diagram of the frequency response of the tunable/switchable filter module 462B operating in a second mode to pass signals for LTE band 13 in an embodiment. In an embodiment the parallel combination ofAW modules variable capacitor 98C may also tune the anti-resonant point between LTE band 17 and 13 as a function of the mode of operation (mode 1 or mode 2). - In an embodiment the
switches 472A to 472D may be comprised of stacked CMOS FETs to pass the PA amplified signals. The use ofmultiple sub-filters switches 474A to 474D as the signal is shared across the sub-filters. In a further embodiment thecapacitors filter module 462B. In another embodiment of all thevariable capacitors 98A to 98G described in the application capacitance range and granularity may be varied as function of corrections needed to maintain the associatedAW modules 80A to 80G nominal resonant and anti-resonant frequencies within acceptable tolerances. The corrections may be known or calculated based on theAW modules 80A to 80G known manufacturing and operating temperature variants and output impedance compensation conditions. - Applications that may include the novel apparatus and systems of various embodiments include electronic circuitry used in high-speed computers, communication and signal processing circuitry, modems, single or multi-processor modules, single or multiple embedded processors, data switches, and application-specific modules, including multilayer, multi-chip modules. Such apparatus and systems may further be included as sub-components within a variety of electronic systems, such as televisions, cellular telephones, personal computers (e.g., laptop computers, desktop computers, handheld computers, tablet computers, etc.), workstations, radios, video players, audio players (e.g., mp3 players), vehicles, medical devices (e.g., heart monitor, blood pressure monitor, etc.) and others. Some embodiments may include a number of methods.
- It may be possible to execute the activities described herein in an order other than the order described. Various activities described with respect to the methods identified herein can be executed in repetitive, serial, or parallel fashion.
- A software program may be launched from a computer-readable medium in a computer-based system to execute functions defined in the software program. Various programming languages may be employed to create software programs designed to implement and perform the methods disclosed herein. The programs may be structured in an object-orientated format using an object-oriented language such as Java or C++. Alternatively, the programs may be structured in a procedure-orientated format using a procedural language, such as assembly or C. The software components may communicate using a number of mechanisms well known to those skilled in the art, such as application program interfaces or inter-process communication techniques, including remote procedure calls. The teachings of various embodiments are not limited to any particular programming language or environment.
- The accompanying drawings that form a part hereof show, by way of illustration and not of limitation, specific embodiments in which the subject matter may be practiced. The embodiments illustrated are described in sufficient detail to enable those skilled in the art to practice the teachings disclosed herein. Other embodiments may be utilized and derived there-from, such that structural and logical substitutions and changes may be made without departing from the scope of this disclosure. This Detailed Description, therefore, is not to be taken in a limiting sense, and the scope of various embodiments is defined only by the appended claims, along with the full range of equivalents to which such claims are entitled.
- Such embodiments of the inventive subject matter may be referred to herein individually or collectively by the term “invention” merely for convenience and without intending to voluntarily limit the scope of this application to any single invention or inventive concept, if more than one is in fact disclosed. Thus, although specific embodiments have been illustrated and described herein, any arrangement calculated to achieve the same purpose may be substituted for the specific embodiments shown. This disclosure is intended to cover any and all adaptations or variations of various embodiments. Combinations of the above embodiments, and other embodiments not specifically described herein, will be apparent to those of skill in the art upon reviewing the above description.
- The Abstract of the Disclosure is provided to comply with 37 C.F.R. § 1.72(b), requiring an abstract that will allow the reader to quickly ascertain the nature of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. In the foregoing Detailed Description, various features are grouped together in a single embodiment for the purpose of streamlining the disclosure. This method of disclosure is not to be interpreted to require more features than are expressly recited in each claim. Rather, inventive subject matter may be found in less than all features of a single disclosed embodiment. Thus the following claims are hereby incorporated into the Detailed Description, with each claim standing on its own as a separate embodiment.
Claims (31)
1. A filter module for providing a pass-band and a tunable rejection band, comprising:
an acoustic wave resonator (AWR), the AWR having a resonant frequency (RFA) and an anti-resonant frequency (AFA); and
a capacitor module coupled in parallel to the AWR, the capacitor module configured to modify the transduction of the electrical signal by the AWR.
2. A filter module for providing a tunable pass-band and a tunable rejection band, comprising:
an acoustic wave resonator (AWR), the AWR having a resonant frequency (RFA) and an anti-resonant frequency (AFA);
a first capacitor module coupled in parallel to the AWR, the first capacitor module configured to modify the transduction of the electrical signal by the AWR; and
a second capacitor module coupled in series to the AWR and the first capacitor module, the second capacitor module configured to modify the transduction of the electrical signal by the AWR.
3. The filter module of claim 1 , wherein the capacitor modifies at least one of the AFA and RFA.
4. The filter module of claim 2 , wherein the first capacitor module or the second capacitor module or a combination thereof modifies at least one of the RFA and AFA.
5. The filter module of claim 1 , wherein the capacitor module is a variable capacitor.
6. The filter module of claim 2 , wherein at least one of the first capacitor module and the second capacitor module are variable capacitors.
7. A filter module for providing a switchable pass-band and a tunable rejection band, the filter module comprising:
an acoustic wave resonator (AWR), the AWR having a resonant frequency (RFA) and an anti-resonant frequency (AFA);
a switch coupled in series with the AWR, wherein the AWR is inoperative when the switch is opened and active when the switch is closed;
a capacitor module coupled in parallel to the switch and the AWR, the capacitor module configured to modify the transduction of the electrical signal by the AWR when the switch is closed.
8. A filter module for providing a switchable pass-band and a tunable rejection band, the filter module comprising:
a first acoustic wave resonator (AWR), the first AWR having a resonant frequency (RFA1) and an anti-resonant frequency (AFA1);
a first switch coupled in series with the first AWR, wherein the first AWR is inoperative when the first switch is opened and active when the first switch is closed;
a second AWR, the second AWR having a resonant frequency (RFA2) different from RFA1, and an anti-resonant frequency (AFA2) different from AFA1;
a second switch coupled in series with the second AWR, wherein the second AWR is inoperative when the second switch is opened and active when the second switch is closed, and wherein a combination of the first switch and first AWR is coupled in parallel to a combination of the second switch and second AWR; and
a first capacitor module coupled in parallel to a) the combination of the first switch and first AWR and b) the combination of the second switch and second AWR, the first capacitor module configured to modify the transduction of the electrical signal by one of the first AWR and the second AWR when the corresponding one of the first switch and the second switch is closed.
9. The filter module of claim 8 , wherein the first capacitor module is configured to modify at least:
a) one of the RFA1 and the AFA1, and
b) one of the RFA2 and the AFA2.
10. The filter module of claim 8 , wherein the first capacitor module is a variable capacitor.
11. A filter module, including:
a switchable pass-band and tunable rejection band filter module, comprising:
a first acoustic wave resonator (AWR);
a first switch coupled serially to the first AWR wherein the first AWR is inoperative when the first switch is opened and active when the first switch is closed, the first AWR having a resonant frequency (RFA1) and an anti-resonant frequency (AFA1);
a second AWR;
a second switch coupled serially to the second AWR,
wherein:
(a) the second AWR is inoperative when the second switch is opened and active when the second switch is closed;
(b) a combination of the first switch and first AWR is coupled in parallel to a combination of the second switch and second AWR;
(c) the second AWR has a resonate frequency (RFA2) and an anti-resonate frequency (AFA2), wherein the RFA1 and RFA2 are offset in frequency; and
a first variable capacitor coupled in parallel with the combination of the first switch and the first AWR, the first variable capacitor configured to vary at least one of the AFA1 and the AFA2 thereby configuring the switchable pass-band and tunable rejection band filter module; and
a tunable filter module, comprising:
a third AWR, the third AWR coupled to the first AWR and the second AWR, the third AWR configured to filter electrical signals and having a resonate frequency (RFA3) and an anti-resonate frequency (AFA3); and
a second variable capacitor configured to vary the AFA3 thereby configuring the tunable filter module.
12. The filter module of claim 11 , wherein the RFA1 has a frequency shift greater than 5% of the RFA1 frequency magnitude.
13. The filter module of claim 11 , the combination of the first AWR and the third AWR forming a first filter when the first switch is closed and the second switch is open and the combination of the second AWR and the third AWR forming a second filter when the first switch is open and the second switch is closed.
14. An electrical signal processing system, including:
a first acoustic wave resonator (AWR), the AWR having a resonant frequency (RFA1) and an anti-resonant frequency (AFA1), and
a first variable capacitor module (FVCM) coupled to the first AWR, the FVCM having a plurality of selectable capacitances configurable for modifying RFA1 and AFA1; wherein:
at least one of the plurality of selectable capacitances is selected based on statistical data representing at least one of: a) an anti-resonant frequency probability function representing manufacturing variations of the first AWR and b) a resonant frequency probability function representing manufacturing variations of the first AWR.
15. The electrical signal processing system of claim 14 , wherein the first AWR configured as a filter for filtering the electrical signal.
16. The electrical signal processing system of claim 15 , wherein the FVCM is coupled in parallel to the first AWR.
17. The electrical signal processing system of claim 15 , further comprising a temperature detection module, the temperature detection module providing a calculation of the temperature at or near the first AWR, and wherein one of the plurality of FVCM selectable capacitances are selected based on the calculated temperature.
18. The electrical signal processing system of claim 15 , further comprising a second variable capacitor module (SVCM) coupled serially to the first AWR, the SVCM having a plurality of selectable capacitances for modifying the RFA1; wherein: one of the plurality of SVCM is selected based at least in part on the statistical data.
19. The electrical signal processing system of claim 18 , wherein the FVCM has at least a first capacitance and a second capacitance.
20. The electrical signal processing system of claim 14 , further comprising a second AWR coupled to the first AWR, the second AWR having a resonant frequency (RFA2) and an anti-resonant frequency (AFA2).
21. The electrical signal processing system of claim 20 , further comprising a third variable capacitor module (TVCM) coupled to the second AWR, the TVCM having a plurality of selectable capacitances configurable for modifying one of the RFA2 and the AFA2, wherein: one of the plurality of TVCM selectable capacitances is selected based at least in part on the statistical data.
22. The electrical signal processing system of claim 14 , wherein one of the plurality of FVCM selectable capacitances is selected based on a received FVCM capacitance selection signal.
23. An electrical signal processing system, including:
a tunable filter module comprising a first variable capacitor module (FVCM) coupled to a first acoustic wave resonator (AWR), the FVCM having a plurality of selectable capacitances;
a memory device having stored thereon, variable capacitor deltas for various voltage standing wave ratios, the voltage standing wave ratios related to ratios between target input and output impedances for the tunable filter module; and
a control logic module configured for using the memory device to select at least one of the plurality of selectable capacitances based at least in part on the variable capacitor deltas stored in the memory device and a derived voltage standing wave ratios differential.
24. The electrical signal processing system of claim 23 , wherein the FVCM is coupled in parallel to the first AWR.
25. The electrical signal processing system of claim 23 , further comprising an output impedance detection module, the output impedance detection module configured to sense a coupled output impedance at the first AWR, the control logic module configured to derive the voltage standing wave ratios differential based on the sensed output impedance and selecting the at least one of the plurality of selectable capacitances based on the differential.
26. The electrical signal processing system of claim 24 , further comprising a second variable capacitor module (SVCM), the SVCM having a plurality of selectable capacitances.
27. The electrical signal processing system of claim 26 , the control logic module selecting one of the plurality of SVCM selectable capacitances based at least in part on the sensed output impedance and at the stored output impedance data.
28. The electrical signal processing system of claim 26 , wherein the FVCM has at least a first capacitance and a second capacitance.
29. The electrical signal processing system of claim 26 , wherein the SVCM has at least a first capacitance and a second capacitance.
30. The electrical signal processing system of claim 23 , further comprising a second AWR, the second AWR being coupled to the first AWR.
31. The electrical signal processing system of claim 30 , further comprising a third variable capacitor module (TVCM) coupled to the second AWR, the TVCM having a plurality of selectable capacitances.
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- 2011-12-09 EP EP14003070.1A patent/EP2843834B1/en active Active
- 2011-12-09 EP EP14003071.9A patent/EP2843835B1/en active Active
-
2015
- 2015-05-22 US US14/720,613 patent/US9660611B2/en active Active
-
2016
- 2016-08-31 JP JP2016169006A patent/JP6519557B2/en active Active
-
2017
- 2017-04-20 US US15/493,041 patent/US20180123563A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10790796B2 (en) | 2010-12-10 | 2020-09-29 | Psemi Corporation | Method, system, and apparatus for resonator circuits and modulating resonators |
US11476823B2 (en) | 2010-12-10 | 2022-10-18 | Psemi Corporation | Method, system, and apparatus for resonator circuits and modulating resonators |
Also Published As
Publication number | Publication date |
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EP2843834A3 (en) | 2015-04-29 |
EP2843834B1 (en) | 2016-10-26 |
US20160020750A1 (en) | 2016-01-21 |
US9660611B2 (en) | 2017-05-23 |
US20120313731A1 (en) | 2012-12-13 |
EP2843834A1 (en) | 2015-03-04 |
EP2843835A1 (en) | 2015-03-04 |
JP2014502803A (en) | 2014-02-03 |
JP6519557B2 (en) | 2019-05-29 |
EP2649728B1 (en) | 2015-10-14 |
EP2922203A1 (en) | 2015-09-23 |
JP6000969B2 (en) | 2016-10-05 |
EP2922202B1 (en) | 2021-06-02 |
EP2649728A2 (en) | 2013-10-16 |
EP2922202A1 (en) | 2015-09-23 |
US9041484B2 (en) | 2015-05-26 |
WO2012079038A3 (en) | 2012-11-01 |
EP3944497A2 (en) | 2022-01-26 |
EP2922204A1 (en) | 2015-09-23 |
JP2017017733A (en) | 2017-01-19 |
WO2012079038A2 (en) | 2012-06-14 |
EP2843835B1 (en) | 2016-07-13 |
EP3944497A3 (en) | 2022-03-30 |
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