US20110048326A1 - Film formation apparatus for semiconductor process - Google Patents
Film formation apparatus for semiconductor process Download PDFInfo
- Publication number
- US20110048326A1 US20110048326A1 US12/871,342 US87134210A US2011048326A1 US 20110048326 A1 US20110048326 A1 US 20110048326A1 US 87134210 A US87134210 A US 87134210A US 2011048326 A1 US2011048326 A1 US 2011048326A1
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- Prior art keywords
- gas
- rotary table
- reactive gas
- vacuum container
- separation
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- 238000000034 method Methods 0.000 title claims abstract description 75
- 230000008569 process Effects 0.000 title claims abstract description 66
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000007789 gas Substances 0.000 claims abstract description 456
- 239000010408 film Substances 0.000 claims abstract description 84
- 239000000126 substance Substances 0.000 claims abstract description 32
- 230000007246 mechanism Effects 0.000 claims abstract description 17
- 230000008016 vaporization Effects 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 238000000926 separation method Methods 0.000 claims description 114
- 238000010438 heat treatment Methods 0.000 claims description 55
- 238000012546 transfer Methods 0.000 claims description 17
- 230000003213 activating effect Effects 0.000 claims description 16
- 238000010926 purge Methods 0.000 claims description 15
- 239000007795 chemical reaction product Substances 0.000 claims description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 8
- 230000001131 transforming effect Effects 0.000 claims description 3
- 238000002407 reforming Methods 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 106
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 48
- 230000000994 depressogenic effect Effects 0.000 description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 229910052814 silicon oxide Inorganic materials 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 15
- 238000009833 condensation Methods 0.000 description 13
- 230000005494 condensation Effects 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 10
- 238000011144 upstream manufacturing Methods 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000009834 vaporization Methods 0.000 description 9
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000000356 contaminant Substances 0.000 description 7
- 239000013067 intermediate product Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000008213 purified water Substances 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920001709 polysilazane Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101000735417 Homo sapiens Protein PAPPAS Proteins 0.000 description 1
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 1
- 102100034919 Protein PAPPAS Human genes 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910020175 SiOH Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Abstract
A film formation apparatus for a semiconductor process for forming a thin film on a target object by use of first and second reactive gases includes a vacuum container, an exhaust system, a rotary table configured to place the target object thereon, a rotating mechanism configured to rotate the rotary table, and a temperature adjusting mechanism configured to set the target object to a temperature at which the first reactive gas is condensed. Inside the vacuum container, a first reactive gas supply section configured to adsorb a condensed substance of the first reactive gas onto the target object, a vaporizing section configured to partly vaporize the condensed substance, and a second reactive gas supply section configured to cause the second reactive gas to react with the condensed substance are disposed in this order in a rotational direction of the rotary table.
Description
- This application claims the benefit of priority from Japanese Patent Application No. 2009-202016, filed on Sep. 1, 2009 in the Japan Patent Office, the disclosure of which is incorporated herein in the entirety by reference.
- 1. Field of the Invention
- The present invention relates to a film formation apparatus for a semiconductor process for forming a thin film on a target object, such as a semiconductor wafer, inside a vacuum container by use of at least two reactive gases of different types. The term “semiconductor process” used herein includes various kinds of processes which are performed to manufacture a semiconductor device or a structure having wiring layers, electrodes, and the like to be connected to a semiconductor device, on a target object, such as a semiconductor wafer or a glass substrate used for an FPD (Flat Panel Display), e.g., an LCD (Liquid Crystal Display), by forming semiconductor layers, insulating layers, and conductive layers in predetermined patterns on the target object.
- 2. Description of the Related Art
- Owing to the demands of increased miniaturization of patterns used in semiconductor devices, it has become more important to form embedded structures of high quality inside depressed portions in the patterns. For example, in order to provide device isolation areas on a semiconductor wafer, various techniques have been proposed concerning an STI (shallow trench isolation) structure, which includes a trench formed in the wafer and an insulating film embedded in the trench. As regards techniques of this kind, it has become more difficult to provide films good in filling performance as well as film quality, along with the increased miniaturization of patterns. In the present circumstance, oxide films formed by a combination of a PSZ (polysilazane) film coating method and an HDP (high density plasma) method are widely used as embedded films of this kind. However, where a CVD (chemical vapor deposition) method, such as the HDP method, is used, voids are easily generated at overlap portions of films deposited on the sidewall of a trench. Consequently, problems arise such that deterioration in film quality, such as an increase in etching rate, is caused, and deposition in deep trenches is difficult. Further, along with the increased miniaturization of patterns, fluctuation of the shape of resist masks influences more on the shape of depressed portions, and may cause depressed portions to have a reversely taper shape that is wider toward the bottom. Where a depressed portion has a high aspect ratio and a reversely taper shape together, it is particularly difficult to embed a film therein.
- U.S. Pat. No. 7,153,542 discloses an apparatus configured to rotate a table with a wafer placed thereon relative to a gas supply section, while sequentially supplying different reactive gases onto the wafer, to perform film formation cycles including a plasma process and a thermal process. Jpn. Pat. Appln. KOKAI Publication No. 8-162449 discloses a film formation method utilizing liquid phase epitaxy for improving characteristics for embedding a film, along with repetition of plasma irradiation and thermal annealing for improving the film quality. Jpn. Pat. Appln. KOKAI Publication No. 2004-47644 discloses a technique for forming an oxide film by liquefying TEOS gas on the substrate and then supplying oxygen gas under heating.
- An object of the present invention is to provide a film formation apparatus for a semiconductor process, which can well perform embedding of a film in a depressed portion of a target object.
- According to a first aspect of the present invention, there is provided a film formation apparatus for a semiconductor process for forming a thin film on a target object by use of first and second reactive gases, the apparatus comprising: a vacuum container; an exhaust system configured to exhaust gas from inside the vacuum container; a rotary table disposed inside the vacuum container and configured to place the target object thereon; a rotating mechanism configured to rotate the rotary table; a temperature adjusting mechanism configured to set the target object on the rotary table to a temperature at which the first reactive gas is condensed; a first reactive gas supply section disposed inside the vacuum container and configured to supply the first reactive gas onto the target object on the rotary table to adsorb a condensed substance of the first reactive gas onto the target object; a vaporizing section disposed inside the vacuum container and configured to heat the target object on the rotary table to partly vaporize the condensed substance; and a second reactive gas supply section disposed inside the vacuum container and configured to supply the second reactive gas in an activated state onto the target object on the rotary table and to cause the second reactive gas to react with the condensed substance to form a reaction product, wherein the first reactive gas supply section, the vaporizing section, and the second reactive gas supply section are disposed in this order in a rotational direction of the rotary table.
- Additional objects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention may be realized and obtained by means of the instrumentalities and combinations particularly pointed out hereinafter.
- The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention, and together with the general description given above and the detailed description of the embodiments given below, serve to explain the principles of the invention.
-
FIG. 1 is a sectional side view showing a film formation apparatus according to a first embodiment of the present invention; -
FIG. 2 is a sectional plan view showing the film formation apparatus; -
FIGS. 3A and 3B are sectional side views each showing process areas and a separation area inside the film formation apparatus; -
FIG. 4 is an enlarged sectional side view showing the film formation apparatus; -
FIG. 5 is a perspective view showing a plasma injector used in the film formation apparatus; -
FIG. 6 is a sectional side view showing the plasma injector; -
FIG. 7 is an enlarged sectional side view showing the film formation apparatus; -
FIG. 8 is an enlarged sectional side view showing the film formation apparatus; -
FIG. 9 is a schematic view showing purge gas flows inside the film formation apparatus; -
FIG. 10 is a perspective view showing a partially sectional perspective view showing the film formation apparatus; -
FIG. 11 is a schematic view showing a cross section of a substrate to be subjected to a film formation process in the film formation apparatus; -
FIG. 12 is a schematic view showing progress of a film formation process on a substrate in the film formation apparatus; -
FIGS. 13A , 13B, and 13C are schematic views showing progress of a film formation process on a substrate in the film formation apparatus; -
FIG. 14 is a schematic view showing progress of a film formation process on a substrate in the film formation apparatus; -
FIG. 15 is a schematic view showing gas flows inside the film formation apparatus; -
FIG. 16 is a sectional plan view showing a film formation apparatus according to a second embodiment of the present invention; -
FIGS. 17A and 17B are a sectional side view and a sectional front view showing an ozone activation injector used in the alternative embodiment; and -
FIG. 18 is a sectional plan view showing a film formation apparatus according to a third embodiment of the present invention. - Embodiments of the present invention will now be described with reference to the accompanying drawings. In the following description, the constituent elements having substantially the same function and arrangement are denoted by the same reference numerals, and a repetitive description will be made only when necessary.
- As shown in
FIGS. 1 and 2 , the film formation apparatus according to the first embodiment of the present invention includes aflat vacuum container 1 having an essentially circular shape in the plan view, and a horizontal rotary table 2 disposed inside thevacuum container 1 and having a rotational center at the center of thevacuum container 1. Thevacuum container 1 includes containermain body 12 like a cup containing the rotary table 2 and acircular top plate 11 that airtightly closes the upper opening of the containermain body 12. A seal member having a ring shape, such as an O-ring 13, is disposed on the periphery of the upper opening of the containermain body 12, so that thetop plate 11 is airtightly connected to the containermain body 12. Thetop plate 11 can be moved up and down by a drive mechanism (not shown) when it is opened and closed. - The rotary table 2 is attached at the center to a
core portion 21 having a circular cylindrical shape. Thecore portion 21 is fixed at the top of therotary shaft 22 extending in the vertical direction. Therotary shaft 22 extends through thebottom plate 14 of thevacuum container 1, and is connected at the bottom to a rotating mechanism or drivemember 23 that rotates therotary shaft 22, clockwise in this embodiment, about a vertical axis. Therotary shaft 22 and drivemember 23 are contained in acylindrical casing 20 opened at the top. Thecasing 20 has a flange at the top, which is airtightly attached to the lower surface of thebottom plate 14 of thevacuum container 1, to ensure the airtight state between the atmospheres inside and outside thecasing 20. - The rotary table 2 has a plurality of, such as five,
circular dimples 24 formed on the upper face side by side in a rotational direction (annular direction), as shown inFIG. 2 , wherein each ofdimples 24 is configured to place a substrate or semiconductor wafer (which may be simply referred to as “wafer”) W. Accordingly, when the rotary table 2 is rotated, thedimples 24 are moved around a vertical axis serving as the center, which is the rotational center of the rotary table 2. Each of thedimples 24 is equipped with a plurality of, such as three, lifter pins 16 (seeFIG. 10 ) for supporting the back side of a wafer W and moving the wafer W up and down, as described later, and thus has through-holes formed in the bottom, through which the lifter pins 16 extend.FIGS. 3A and 3B are sectional side views each showing thetop plate 11 of thevacuum container 11 and the rotary table 2 in a development elevation, which is taken along a coaxial circular line about the rotational center. - As shown in
FIGS. 2 to 4 , areactive gas nozzle 31, twoseparation gas nozzles auxiliary gas nozzle 200, which are made of, e.g., quartz, are disposed inside thevacuum container 1 at intervals in the annular direction (the rotational direction of the rotary table 2) directly above the respective areas where thedimples 24 of the rotary table 2 pass through. In this embodiment, the firstseparation gas nozzle 41,reactive gas nozzle 31, secondseparation gas nozzle 42, andauxiliary gas nozzle 200 are arrayed in this order clockwise (in the rotational direction of the rotary table 2) from atransfer port 15 described later. Thesenozzles vacuum container 1 such that they are arrayed in this order in the rotational direction from a position almost opposite to thetransfer port 15 to a position immediately upstream of thetransfer port 15. For example, thereactive gas nozzle 31,auxiliary gas nozzle 200 andseparation gas nozzles vacuum container 1 toward the rotational center of the rotary table 2. These nozzles respectively includegas introducing portions vacuum container 1. - The
reactive gas nozzle 31 andauxiliary gas nozzle 200 are part of first reactive gas supply means and auxiliary gas supply means, respectively, and theseparation gas nozzles nozzles holes 100 formed in the sidewall of thevacuum container 1 at a plurality of positions. Through-holes 100, to which thenozzles - The
reactive gas nozzle 31 is supplied with a first reactive gas, such as BTBAS (bistertialbutylamino silane) gas from agas source 31 e through agas supply line 31 b equipped with avalve 31 c and aflow rate regulator 31 d. Theauxiliary gas nozzle 200 is supplied with an auxiliary gas from anauxiliary gas source 200 e through agas supply line 200 b equipped with avalve 200 c and aflow rate regulator 200 d. As described later, the auxiliary gas is a gas for transforming a condensed substance of the reactive gas (BTBAS gas) adsorbed on the wafers W into an intermediate product that is less volatile than the condensed substance. The less volatile intermediate product is a product containing a hydroxyl group (OH group) and/or moisture. For example, the auxiliary gas is a gas containing a hydroxyl group (OH group), such as an alcohol (R—OH, R: alkyl group), or purified water (H2O) or hydrogen peroxide solution (H2O2). In this embodiment, ethanol (C2H5OH) gas is supplied as the auxiliary gas. - The first
separation gas nozzle 41 is supplied with a separation gas, such as N2 gas (nitrogen gas), from a gas source 41 e through agas supply line 41 b equipped with avalve 41 c and aflow rate regulator 41 d. The secondseparation gas nozzle 42 is supplied with a separation gas, such as N2 gas (nitrogen gas), from a gas source 42 e through agas supply line 42 b equipped with a valve 42 c and aflow rate regulator 42 d. Thegas supply line 42 b is further equipped with aheating portion 42 f, so that the N2 gas is heated to a predetermined temperature by theheating portion 42 f while it is supplied into the secondseparation gas nozzle 42. Thus, the second separation gas nozzle 42 (second separation gas supply means) also serves as heating means for heating the wafers W to partly vaporize the condensed substance of the reactive gas (BTBAS gas) adsorbed on the wafers W, as described later. In order to partly vaporize the condensed substance adsorbed on the wafers W, the wafers W are preferably heated to a temperature of, e.g., 85° C. to 150° C. In this case, the N2 gas heated to a temperature of 100° C. to 200° C. by theheating portion 42 f is supplied from the secondseparation gas nozzle 42 into thevacuum container 1. - In this embodiment, the
gas supply line 31 b to thereactive gas nozzle 31 is also equipped with aheating portion 31 f. The first reactive gas or BTBAS gas is heated by the heating portion to a temperature higher than that of the wafers W placed on the rotary table 2 and is supplied into thevacuum container 1 in a gaseous phase. - As shown in
FIGS. 3A , 3B, and 4, thereactive gas nozzle 31 has a plurality of gas delivery holes 33 formed therein and facing right below to deliver the reactive gas downward. The gas delivery holes 33 have a bore diameter of e.g., 0.5 mm and are arrayed at regular intervals, such as 10 mm, over the nozzle longitudinal direction (a radial direction of the rotary table 2). Theauxiliary gas nozzle 200 has a plurality of gas delivery holes 201 formed therein and facing right below to deliver the auxiliary gas downward. The gas delivery holes 201 have a bore diameter of e.g., 0.5 mm and are arrayed at regular intervals, such as 10 mm, over the nozzle longitudinal direction (a radial direction of the rotary table 2). Each of theseparation gas nozzles - The vertical distance between the gas delivery holes 33 of the
reactive gas nozzle 31 and the wafers W is set at a value of, e.g., 1 to 4 mm, and preferably of 2 mm. The vertical distance between the gas delivery holes 201 of theauxiliary gas nozzle 200 and the wafers W is set at a value of, e.g., 1 to 4 mm, and preferably of 2 mm. The vertical distance between the gas delivery holes 40 of theseparation gas nozzles reactive gas nozzle 31 is a first process area 91 (first reactive gas supply section) for adsorbing the BTBAS gas on the wafers W. The area below theauxiliary gas nozzle 200 is an auxiliary area 90 (auxiliary gas supply section) for causing the ethanol gas to react with BTBAS condensed on the wafers W to generate the intermediate product. The area below the secondseparation gas nozzle 42 is a heating area. - Between the
auxiliary gas nozzle 200 and firstseparation gas nozzle 41 in the rotational direction of the rotary table 2, aplasma injector 250 and aheating lamp 210 are arrayed in this order toward the downstream side in the rotational direction. - The
plasma injector 250 is part of second reactive gas supply means for activating the second reactive gas and supplying it onto the wafers W. The area below theplasma injector 250 is a second process area 92 (second reactive gas supply section) for supplying the second reactive gas or oxygen (O2) gas onto the wafers W. Theplasma injector 250 includes an injectormain body 251 formed of a casing extending in a radial direction of the rotary table 2. As shown inFIGS. 5 and 6 , the injectormain body 251 defines therein two spaces having different widths and partitioned by apartition wall 252 extending in its longitudinal direction. One of them is a gas activating passage orgas activating cell 253 for turning the second reactive gas into plasma (activation). The other of them is a gas introducing passage orgas introducing cell 254 for supplying a plasma generation gas into thegas activating cell 253. -
FIGS. 2 , 5, and 6 further show agas supply nozzle 255, gas holes 256, agas introducing portion 257, aconnection line 258, and acoupler 259. The plasma generation gas is supplied from the gas holes 256 of thegas supply nozzle 255 into thegas introducing cell 254, and the gas flows throughslots 271 formed in thepartition wall 252 into thegas activating cell 253. In thegas activating cell 253, twosheath pipes 272 made of a dielectric material, such as a ceramic, extend along thepartition wall 252 from the proximal end to the distal end of thegas activating cell 253. Each of thesheath pipes 272 envelopsrod electrode 273 inserted therein. The proximal ends of theelectrodes 273 are led out of the injectormain body 251 and are connected to an RF (radio frequency)power supply 275 through amatching unit 274 outside thevacuum container 1. The injectormain body 251 has gas delivery holes 291 formed on its bottom and arrayed in the longitudinal direction of the injectormain body 251, so that plasma generated in theplasma generation area 290 including theelectrodes 273 is delivered downward through the gas delivery holes 291. The injectormain body 251 extends in a radial direction of the rotary table 2 such that its distal end reaches a position close to the center of the rotary table 2.FIG. 2 further shows agas supply line 261 for supplying the second reactive gas, such as oxygen (O2) gas, into thegas supply nozzle 255, wherein thegas supply line 261 is connected to agas source 264 of the O2 gas through avalve 262 and aflow rate regulator 263. In this embodiment, the second reactive gas serves as the plasma generation gas as well. - The
heating lamp 210 extends in a radial direction of the rotary table 2 and is used as annealing heater. For example, as shown inFIG. 7 , theheating lamp 210 is formed of a long cylindrical infrared lamp contained in alamp house 211, which is disposed on thetop plate 11 of thevacuum container 1 and extending in a radial direction of the rotary table 2. Thelamp house 211 is provided with a reflector on the upper side, and a light-transmission window 212 on the lower side, which airtightly separates the atmosphere inside thelamp house 211 from the atmosphere inside thevacuum container 1. Theheating lamp 210 hasseal members 213 serving as electrodes as well at opposite ends, which are respectively connected toelectric supply lines 214 extending from above thetop plate 11 of thevacuum container 1, for example.FIG. 7 further shows apower supply 217 for supplying electricity to theheating lamp 210 through theelectric supply lines 214 andseal members 213, andsupport members 216 that support theheating lamp 210 from the opposite sides. Theheating lamp 210 is controlled in accordance with results of measurement performed by a temperature detector (not shown), such as a thermocouple, to heat the wafers W to a temperature of, e.g., 100° C. to 450° C., and preferably of 350° C., suitable for performing a heating process (compacting process), as described later. - Back to the explanation on the first and second
separation gas nozzles FIG. 2 , the firstseparation gas nozzle 41 provides a first separation area D1, at a position upstream of thefirst process area 91 in the rotational direction, for separating thefirst process area 91 from thesecond process area 92 andauxiliary area 90. The secondseparation gas nozzle 42 provides a second separation area D2, at a position downstream of thefirst process area 91 in the rotational direction, for separating thefirst process area 91 from theauxiliary area 90 andsecond process area 92. - As shown in
FIGS. 2 , 3A, and 3B, each of the separation areas D1 and D2 includes a projectingpart 4 projecting downward from thetop plate 11 of thevacuum container 1, wherein the projectingpart 4 has a sector shape in the plan view, which is formed by cutting the circle defined by the sidewall of thevacuum container 1 by two radial lines extending from the rotational center of the rotary table 2. Each of theseparation gas nozzles groove 43 formed on the projectingpart 4 at its center in the annular direction and extending in a radial direction. The distances from the central axis of the separation gas nozzle 41 (42) to the opposite ends of the sector shape of the projecting part 4 (the upstream and downstream ends in the rotational direction of the rotary table 2) are set to be the same. In other words, in this embodiment, thegroove 43 is formed to divide the projectingpart 4 into tow equal parts. In another embodiment, thegroove 43 may be formed such that the surface area of the projectingpart 4 upstream of thegroove 43 is large than that downstream of thegroove 43 in the rotational direction of the rotary table 2. - As described above, each of the
separation gas nozzles part 4, in the rotational direction. Further, the ceiling surfaces 44 are sandwiched by ceiling surfaces 45 (second ceiling surfaces), which are higher than the ceiling surfaces 44, in the rotational direction. The projectingpart 4 is conceived to provide a separation gap having a small thickness between the projectingpart 4 and rotary table 2, which serves to prevent the reactive gas and auxiliary gas from flowing therein and to prevent the gases from being mixed, so as to attain separation of gas atmospheres. - For example, in the case of the first
separation gas nozzle 41, the separation gap prevents the ethanol gas and O2 gas from entering from the upstream side in the rotational direction of the rotary table 2, and also prevents the BTBAS gas from entering from the downstream side in the rotational direction. In this embodiment, the effect of preventing gases from entering is obtained such that the separation gas or N2 gas delivered from theseparation gas nozzle 41 is diffused in the gap between the first ceiling surfaces 44 and rotary table 2 and is blown into the adjacent spaces below the second ceiling surfaces 45 adjacent to the first ceiling surfaces 44 to prevent gases from entering from the adjacent spaces. However, “separation of gas atmospheres” means not only a case where gases cannot at all enter the separation gap from the adjacent spaces on the opposite sides, but also a case the gases can slightly enter the separation gap but each of the gases cannot at all flow into the other side adjacent space. For example, in the case of thefirst process area 91, it is essential that the BTBAS gas is not mixed with the ethanol gas and O2 gas in this area. As long as such an effect is ensured, the separation areas D1 and D2 can be said that they provide their necessary separation functions to separate the atmosphere of thefirst process area 91 and the atmosphere of the second process area 92 (and the atmosphere of the auxiliary area 90) from each other. In this embodiment, the dimensions (thickness, surface area, and so forth) of the separation gap having a small thickness are set such that the pressure difference between the separation areas D1 and D2 and the adjacent spaces is large enough to provide the effect of preventing gases from entering. In order to attain a sufficient separation function, the thickness of the separation gap (the position of the lower surface of the projecting part 4) has to be adjusted in accordance with the surface area of the projectingpart 4 and other factors. It should be noted that separation of gas atmospheres means separation of substances present in gaseous atmospheres, as a matter of course, because substances derived from the gases and adsorbed or condensed on the wafers W have to pass through the separation areas D1 and D2. - As the separation gas or purge gas, an inert gas, such argon (Ar) gas or helium (He) gas, may be used in place of nitrogen (N2) gas serving as an inactive gas. In place of such an inactive gas, hydrogen (H2) gas may be used. Unless the film formation process is adversely affected, the separation gas or purge gas is not limited to a specific one. For example, the second
separation gas nozzle 42 may be arranged to supply a heated inactive gas, such as Ar gas, or heated H2 gas to partly vaporize the BTBAS gas condensed substance adsorbed on the wafers W. - The lower surface of the
top plate 11 further includes anannular protrusion 5 formed at a position outside thecore portion 21 of the rotary table 2 and extending along the periphery of thecore portion 21. Theannular protrusion 5 is continuous to portions of the projectingparts 4 close to the rotational center of the rotary table 2. The lower surface of theannular protrusion 5 is level with the lower surface of the projecting parts 4 (ceiling surfaces 44).FIG. 2 is a sectional plan view showing the apparatus taken along a horizontal line extending through thetop plate 11 at a position lower than the ceiling surfaces 45 and higher than theseparation gas nozzles annular protrusion 5 may be formed not integrally with the projectingparts 4 but separately from the projectingparts 4. - As described above, the lower surface of the
top plate 11 of thevacuum container 1 comprises the first ceiling surfaces 44 and the second ceiling surfaces 45 higher than the ceiling surfaces 44, which are arrayed in the annular direction and are present as the ceiling surfaces facing the wafer mount places (dimples 24) of the rotary table 2.FIG. 1 shows a cross section of an area having thehigher ceiling surface 45.FIG. 8 shows a cross section of an area having thelower ceiling surface 44. As shown inFIGS. 2 and 8 , the peripheral portion of each of the sector-shaped projecting parts 4 (a portion of thevacuum container 1 near the outer end) forms an L-shapedbent portion 46 that faces the outer end face of the rotary table 2. Since the sector-shaped projectingparts 4 are formed on thetop plate 11, which can be detached from the containermain body 12, there is a small gap between the outer peripheral surface of thebent portion 46 and the containermain body 12. The respectivebent portions 46 are also conceived to prevent the BTBAS gas, ethanol gas, and O2 gas from entering from both sides and to prevent them from being mixed, as in the projectingparts 4. The gap between the inner peripheral surface of eachbent portion 46 and the outer end face of the rotary table 2 and the gap between the outer peripheral surface of thebent portion 46 and the containermain body 12 are set to be the same as the height “h” of the ceiling surfaces 44 relative to the surface of the rotary table 2. In this embodiment, the inner peripheral surface of the respectivebent portions 46 is deemed to form an inner peripheral wall of thevacuum container 1, when viewed from the surface area of the rotary table 2. - As shown in
FIG. 8 , in the separation areas D1 and D2, the inner peripheral wall of the containermain body 12 forms a vertical surface close to the outer peripheral surface of thebent portions 46. As shown inFIG. 1 , in the areas other than the separation areas D1 and D2, the inner peripheral wall of the containermain body 12 is recessed outward, in a rectangular cross sectional shape, from a position facing the outer end face of the rotary table 2 to a position facing thebottom plate 14, for example. The areas including these recessed portions and communicating with thefirst process area 91 andsecond process area 92 are respectively called a first exhaust area E1 and a second exhaust area E2. As shown inFIGS. 1 and 2 , the first exhaust area E1 and second exhaust area E2 respectively have afirst exhaust port 61 and asecond exhaust port 62 at the bottom. As shown inFIG. 1 , thefirst exhaust port 61 andsecond exhaust port 62 are connected to vacuum exhaust means, such as avacuum pump 64, through anexhaust passage 63 equipped with avalve 65. - The
exhaust ports first exhaust port 61 is formed between thefirst process area 91 and second separation area D2 at a position outside the rotary table 2. Thesecond exhaust port 62 is formed between thesecond process area 92 and first separation area D1 at a position outside the rotary table 2. Thefirst exhaust port 61 is dedicated to exhaust of the first reactive gas or BTBAS gas, while thesecond exhaust port 62 is dedicated to exhaust of the second reactive gas or O2 gas and the ethanol gas. - In this embodiment, the
first exhaust port 61 is present between thereactive gas nozzle 31 and the extension of the adjacent side of the second separation area D2. Thesecond exhaust port 62 is present between theplasma injector 250 and the extension of the adjacent side of the first separation area D1. In other words, thefirst exhaust port 61 is present between a straight line L1 (shown with a single-dashed chain line inFIG. 2 ) extending through the center of the rotary table 2 and thefirst process area 91 and a straight line L2 extending through the center of the rotary table 2 and the upstream side of the second separation area D2. Thesecond exhaust port 62 is present between a straight line L3 (shown with a double-dashed chain line inFIG. 2 ) extending through the center of the rotary table 2 and thesecond process area 92 and a straight line L4 extending through the center of the rotary table 2 and the upstream side of the first separation area D1. - In this embodiment, since no separation area D is present between the
auxiliary area 90 andsecond process area 92, the ethanol gas and the O2 gas are mixed with each other, until they reach theexhaust port 62. This mixing of these gases does not adversely affect the film formation characteristics. - The number of positions having an exhaust port is not limited to 2. For example, a third exhaust port may be further formed between the second separation area D2 and
auxiliary gas nozzle 200. An exhaust port may be formed between theauxiliary gas nozzle 200 andplasma injector 250. A separation area D may be defined between theauxiliary gas nozzle 200 andplasma injector 250. The number of positions having an exhaust port may be 4 or more. In this embodiment, theexhaust ports vacuum container 1 and the peripheral edge of the rotary table 2. However, theexhaust ports vacuum container 1 in place of the bottom of thevacuum container 1. Where theexhaust ports vacuum container 1, they may be located at positions higher than the rotary table 2. In this embodiment, since theexhaust ports - As shown in
FIG. 9 , aheater unit 7 is disposed in a space between the rotary table 2 and thebottom plate 14 of thevacuum container 1 to heat the wafers W on the rotary table 2 to a temperature prescribed in a process recipe. Theheater unit 7 serves as a temperature adjusting mechanism for adjusting the temperature of the wafers W to a temperature at which the first reactive gas (BTBAS gas) is adsorbed and condensed. Theheater unit 7 is surrounded by acover member 71 all around, which extends upward from thebottom plate 14 of thevacuum container 1 at a position near the peripheral edge of the rotary table 2 to separate the atmosphere where theheater unit 7 is disposed from the atmosphere of the space on the rotary table 2 and the exhaust area E. The upper side of thecover member 71 is bent outward to form a flange that defines a small gap between the flange and the lower surface of the rotary table 2 to prevent outside gas from flowing into the space inside thecover member 71. - At a position closer to the rotational center than the space containing the
heater unit 7 is, thebottom plate 14 has a shape that forms small gaps between thebottom plate 14 and the lower surface of the rotary table 2 andcore portion 21. A through-hole for therotary shaft 22 is formed to extend through thebottom plate 14 and to define a small gap between its inner peripheral surface androtary shaft 22. These small gaps communicate with the space inside thecasing 20. A purgegas supply line 72 is connected to thecasing 20 to supply N2 gas serving as a purge gas into the small gaps. Further, purgegas supply lines 73 are connected to thebottom plate 14 of thevacuum container 1 at a plurality of positions in an annular direction below theheater unit 7 to purge the space containing theheater unit 7. - As shown with arrows indicating flows of the purge gas in
FIG. 9 , N2 gas supplied from the purgegas supply lines heater unit 7. The purge gas is exhausted through the gap between the rotary table 2 and covermember 71 and the exhaust areas E into theexhaust ports first process area 91 orsecond process area 92 into theother area - A separation
gas supply line 51 is connected to the center of thetop plate 11 of thevacuum container 1 to supply N2 gas serving as a separation gas into thespace 52 between thetop plate 11 andcore portion 21. The separation gas supplied into thespace 52 is delivered from asmall gap 50 between theannular protrusion 5 and rotary table 2 toward the peripheral edge of the rotary table 2 along the wafer mount surface of the rotary table 2. The space surrounded by theannular protrusion 5 is filled with the separation gas, and so the BTBAS gas is prevented from being mixed with the O2 gas and ethanol gas through the center portion of the rotary table 2 between thefirst process area 91 andsecond process area 92. In other words, the film formation apparatus includes a central area C defined by the portion of the rotary table 2 near the rotational center and thevacuum container 1 to separate the atmosphere of thefirst process area 91 and the atmosphere of thesecond process area 92 andauxiliary area 90 from each other. The central area C includes a delivery port formed in the rotational direction, which is purged with the separation gas and delivers the separation gas onto the surface of the rotary table 2. This delivery port is defined by thesmall gap 50 between theannular protrusion 5 and rotary table 2. - Further, as shown in
FIGS. 2 and 10 , the sidewall of thevacuum container 1 has atransfer port 15 formed therein to transfer each of the wafers W between anoutside transfer arm 10 and the rotary table 2. Thetransfer port 15 is opened and closed by agate valve 15G. When each of thedimples 24 of the rotary table 2 serving as wafer mount places is set at a position in front of thetransfer port 15, a wafer W is transferred by thetransfer arm 10 to and from this one of thedimples 24. An elevating mechanism (not shown) for the lifter pins 16 is disposed below the rotary table 2 at a position facing thetransfer port 15, wherein the lifter pins extend through each of thedimples 24 and support one wafer W from below. - As shown in
FIG. 1 , the film formation apparatus includes acontrol section 80 comprising a computer, which controls the operation of the apparatus as a whole, and astorage section 85 that stores process programs and so forth. The memory of thecontrol section 80 includes areas for respective recipes, each of which stores process conditions, such as the flow rates of the BTBAS gas, ethanol gas, and N2 gas supplied from thenozzles vacuum container 1; the electric current values applied to theheating portion 42 f,heater unit 7,plasma injector 250, and heating lamp 210 (the wafer W heating temperature, the N2 gas supply temperature, and so forth). Each of the process programs includes instructions to retrieve a certain recipe from the memory and to send control signals to respective portions of the film formation apparatus in accordance with the recipe, so as to process the wafers W by performing steps as described later. The programs are installed into thecontrol section 80 from thestorage section 85, which is formed of a storage medium, such as a hard disk, compact disk, magneto-optical disk, memory card, or flexible disk. - Next, an explanation will be given of some of the functions of the first embodiment, with reference to
FIGS. 11 to 14 . At first, a wafer W subjected to thin film formation in this film formation apparatus will be described. The wafer W includes a plurality ofdepressed portions 230, such as grooves, formed in parallel with each other on the surface. -
FIG. 11 shows a cross section of part of the surface of the wafer W withdepressed portions 230 formed therein. Thedepressed portions 230 have an aspect ratio of about 3 to 50. For example, the depressed portions (pattern) 230 are used for forming STI (shallow trench isolation) structures. In practice, for example, an insulating film consisting of, e.g., silicon nitride is formed inside thedepressed portions 230 on an Si substrate. For example, this pattern is formed by photolithography using a mask layer laminated on the wafer W. Due to process errors or the like in the photolithography, thedepressed portions 230 may include a taperedportion 233 in which the upper opening width is larger than the bottom width and a reversely taperedportion 234 in which the upper opening width is smaller than the bottom width.FIG. 11 shows such fluctuations in the shape of thedepressed portions 230 in an exaggerated state. - The wafer W is subjected to the film formation process, as follows. At first, the
gate valve 15G is opened, and the wafer W is loaded by thetransfer arm 10 from outside the film formation apparatus through thetransfer port 15 onto one of thedimples 24 of the rotary table 2. At this time, in a state where one of thedimples 24 is stopped in front of thetransfer port 15, the wafer W is transferred by thetransfer arm 10 to a position above the lifter pins 16, and is then received by the lifter pins 16 moving up. Then, thetransfer arm 10 is retreated out of thevacuum container 1 and the lifter pins 16 are moved down, so that the wafer W is placed on this one of thedimples 24. Such loading of one wafer W is repeatedly performed while the rotary table 2 is intermittently rotated, so that wafers W are respectively placed on the fivedimples 24 of the rotary table 2. Then, thegate valve 15G is closed to make an airtight state inside thevacuum container 1. Then, the rotary table 2 is rotated clockwise at a predetermined rotational speed of, e.g., 1 to 240 rpm. Further, thevalve 65 is opened at full opening to vacuum-exhaust gas from inside thevacuum container 1 and theheater unit 7 is operated to adjust the temperature of the wafers W at a set value. The set temperature is predetermined to be not higher than the condensation temperature of the first reactive gas (BTBAS gas). BTBAS gas is condensed and liquefied at a temperature of about 50 to 100° C. in thevacuum container 1 having a vacuum pressure of about 1 to 8 Torr. In this embodiment, the wafers W are adjusted to have a temperature of, e.g., about 50 to 100° C., which is not higher than the condensation temperature of the BTBAS gas. - On the other hand, O2 gas is supplied into the
plasma injector 250 at a flow rate of, e.g., 3,000 sccm, and an RF power is supplied from theRF power supply 275 to the plasma generation area 290 (electrodes 273). Consequently, the O2 gas supplied into thegas activating cell 253 is turned into plasma (activated) by the RF power and supplied through the gas delivery holes 291 toward the wafers W placed in the vacuum atmosphere inside thevacuum container 1. Further, at this time, electricity is supplied to theheating lamp 210 such that, when each of the wafers W is passing directly below theheating lamp 210, only the uppermost surface of this wafer W is heated to a temperature of 350° C. or higher. - Then, while the opening degree of the
valve 65 is adjusted to set the inside of thevacuum container 1 at a predetermined vacuum, BTBAS gas heated to a temperature of, e.g., 100 to 150° C. is supplied from thereactive gas nozzle 31 into thevacuum container 1 at a predetermined flow rate of, e.g., 200 sccm. Further, ethanol gas is supplied from theauxiliary nozzle 200 into thevacuum container 1 at a predetermined flow rate of, e.g., 100 sccm. Further, N2 gas is supplied from theseparation gas nozzles vacuum container 1 at predetermined flow rates of, e.g., 10 slm and 10 slm, respectively. Further, N2 gas is also supplied from the separationgas supply line 51 and purgegas supply line 72 into the central area C and the narrow gaps described above at predetermined flow rates. At this time, the secondseparation gas nozzle 42 supplies the N2 gas heated by theheating portion 42 f to a temperature of, e.g., about 100 to 200° C., at which the BTBAS gas condensed substance is partly vaporized. On the other hand, the firstseparation gas nozzle 41 supplies the N2 gas at, e.g., room temperature. - As described above, each of the wafers W is maintained at the set temperature of 50 to 100° C., when it passes through the
first process area 91. In this state, the BTBAS gas heated to a temperature of 100 to 150° C. higher than the wafer temperature is supplied from thereactive gas nozzle 31. Since the wafer surface is set at a temperature not higher than the BTBAS gas condensation temperature, the BTBAS gas is cooled and condensed by the wafer surface when it comes into contact with the wafer surface (condensation step, seeFIG. 12 ). At this time, as shown inFIG. 13A , the BTBAS gas is adsorbed and condensed also on the entrance surface and sidewall of thedepressed portions 230. However, liquefiedBTBAS 235 tends to move downward by gravitation from the entrance surface and sidewall. Consequently, the liquefiedBTBAS 235 is condensed more on the bottom of thedepressed portions 230 than on the entrance surface and sidewall. - Then, this wafer W passes below the second
separation gas nozzle 42 and, at this time, the N2 gas (hot N2 gas) heated to 100 to 200° C. is supplied onto the surface of the wafer W. When the heated N2 gas is supplied onto theBTBAS 235 condensed on the surface of the wafer W, the liquid BTBAS, i.e., BTBAS condensed substance is partly vaporized by heating (vaporization step). - As described above, since the
depressed portions 230 have the condensed substance of the liquefiedBTBAS 235 more on the bottom than the other portions, that part of the condensedBTBAS 235 on the entrance surface and sidewall is vaporized and removed by the N2 gas heating. On the other hand, as shown inFIG. 13B , that part of the condensedBTBAS 235 on the bottom is not sufficiently vaporized but is left thereon. This can be regarded as selective deposition of condensedBTBAS 235 on the bottom of thedepressed portions 230. - As described above, in the vaporization step, the parts of the BTBAS deposits (the condensed substance) on the surface other than the
depressed portions 230 and the sidewall of thedepressed portions 230 are all dispersed, while the part thereof on the bottom of thedepressed portions 230 remains. However, there may be a case where the parts of the BTBAS deposits on the portions other than the bottom are not entirely dispersed but are partly left, depending on the heating temperature and/or heating time. In any case, it is preferable that the BTBAS deposits are left on the bottom of thedepressed portions 230 as much as possible while they are vaporized on the portions other than the bottom as far as possible. Where the first reactive gas is chemically adsorbed on the surface of the wafer W, the reactive gas is not completely dispersed in the vaporization step, and at least one molecular layer of the reactive gas is adsorbed on the sidewall of the depressed portions and the surface of the wafer W other than the depressed portions. - Then, this wafer W passes through the
auxiliary area 90 and, at this time, ethanol gas adjusted at a temperature of, e.g., 50 to 100° C. is supplied onto the surface of the wafer W. The ethanol gas serves as the auxiliary gas for transforming the condensed substance (liquefied gas) of the BTBAS gas adsorbed on the wafer W as described above into an intermediate product that is less volatile than the condensed substance. - Specifically, when the ethanol gas is supplied, the BTBAS inside the
depressed portions 230 causes a reaction in accordance with a reaction formula (1) (it is turned into a silanol), and generates t-butylamine (CH3C—NH2) and siloxane polymer (—(Si—O)n—) 236, the latter as the intermediate product. -
BTBAS+C2H5OH→(−(Si—O)n—)+CH3C—NH2↑ (1) - The
siloxane polymer 236 is a cluster product including a hydroxyl group, which is less volatile than the BTBAS gas condensed substance. In this way, the BTBAS adsorbed inside thedepressed portions 230 is fixed not to be vaporized (silanol formation step). Further, organic matters generated along with thesiloxane polymer 236 are vaporized and removed upward from the wafer W, for example. - Then, this wafer W passes the
second process area 92 below theplasma injector 250 and, at this time, the surface of the wafer W is irradiated with O2 gas plasma (activated O2 gas). Thesiloxane polymer 236 on the surface of the wafer W is oxidized by the oxygen plasma, and so a silicon oxide film (SiO2 film) 237, which is a reaction product containing silicon and oxygen, is formed with a film thickness of, e.g., 0.1 nm (oxidation step). - Since the wafer W is adjusted at a temperature not higher than the BTBAS gas condensation temperature, the oxidation reaction of the siloxane polymer cannot proceed, even if O2 gas or ozone (O3) gas is supplied in an ordinary method. In this embodiment, the O2 gas is activated by the
plasma injector 250 and supplied onto the surface of the wafer W, so that it reacts with the BTBAS condensed substance to sufficiently promote the oxidation reaction of the BTBAS condensed substance even at the low temperature of the wafer W. Further, contaminants, such as organic matters, generated along with thesilicon oxide film 237 are vaporized and exhausted upward from the wafer W, for example. In addition, the O2 plasma radiated onto thesilicon oxide film 237 serves to remove contaminants from inside thesilicon oxide film 237 and to compact thesilicon oxide film 237. - Thereafter, this wafer W passes through the area below the
heating lamp 210 and, at this time, radiation heat is supplied from theheating lamp 210 onto the wafer W to perform an annealing process for reforming the reaction product orsilicon oxide film 237. At this time, the uppermost surface layer of the wafer W is rapidly heated to, e.g., 350° C., and the moisture and carbon components left in thesilicon oxide film 237 formed in this cycle are thereby vaporized and removed. In this way, thesilicon oxide film 237 is subjected to so-called baking that enhances the bonds in thefilm 237 and thereby compacts thefilm 237. At this time, even if contaminants, such as organic matters are present in thesilicon oxide film 237, they are vaporized by this annealing process, separated from thesilicon oxide film 237, and exhausted. - Then, this wafer W is moved downstream from the area below the
heating lamp 210 and, at this time, N2 gas set at, e.g., room temperature is blown from the firstseparation gas nozzle 41 to the surface of the wafer W to decrease the temperature of the uppermost surface layer of the wafer W. At this time, as described above, the condensed BTBAS is preferentially present on the bottom of thedepressed portions 230 due to the condensation step and vaporization step, and so the thickness of the silicon oxide film becomes larger on the bottom of the depressed portions than on the substrate surface and the sidewall of the depressed portions. - As described above, the rotary table 2 is rotated to repeatedly perform the BTBAS condensation (condensation step), BTBAS re-vaporization (vaporization step), siloxane polymer generation (silanol formation step), reaction product (silicon oxide film 237) formation (oxidation step), and
silicon oxide film 237 reformation (annealing step), so as to deposit a film from the bottom of thedepressed portions 230. The rotation (cycle) of the rotary table 2 is repeated a number of times, such as 20 times, and the film is formed like to raise the bottom level of thedepressed portions 230. Consequently, as shown inFIG. 14 , thedepressed portions 230 are filled with thesilicon oxide film 237. - While the cycle is being repeated, when each of the wafers W passes below the
heating lamp 210, the temperature of the surface of the wafer W is temporarily increased. However, when the wafer W passes through the first separation area D1, the surface of the wafer W is cooled by the N2 gas set at room temperature supplied onto the surface of the wafer W. Accordingly, when the wafer W reaches thefirst process area 91, the temperature of the wafer W has already been adjusted to a temperature of, e.g., 50 to 100° C., which is not higher than the BTBAS gas condensation temperature. - As described above, the reaction product or
silicon oxide film 237 is gradually formed cycle by cycle from the bottom of thedepressed portions 230 because of the preferential condensation on the bottom, and so thedepressed portions 230 are filled with the film without voids formed therein. At this time, no problems arise even where thedepressed portions 230 include a taperedportion 233 in which the upper opening width is larger than the bottom width and a reversely taperedportion 234 in which the upper opening width is smaller than the bottom width. This is so, because the liquefiedBTBAS 235 moves downward by gravitation along the taper, and thedepressed portions 230 is filled with the film gradually formed from the bottom without voids formed therein. Further, as regards contaminants in thesilicon oxide film 237, since thesilicon oxide film 237, which may contain contaminants, formed by one cycle is very thin, the contaminants are swiftly removed by the oxygen plasma irradiation and annealing process. - Thus, regardless of the shape of the depressed portions, silicon oxide films are gradually laminated from the bottom and fill the depressed portions, thereby preventing formation of voids, which are a problem for conventional CVD methods. Further, contaminants in the films are decreased every cycle, and so a silicon oxide film of high quality is formed.
- In the sequence of the steps described above, N2 gas is supplied at areas between the
first process area 91 and theauxiliary area 90 andsecond process area 92. Further, N2 gas serving as a separation gas is supplied into the central area C. Consequently, as shown inFIG. 15 , the BTBAS gas and the ethanol gas and O2 gas are exhausted while they are prevented from being mixed with each other. Further, the separation areas D1 and D2 are arranged such that the gap between each of thebent portions 46 and the outer end face of the rotary table 2 is narrow as described above, and so the BTBAS gas is not mixed with the ethanol gas and O2 gas through the outside of the rotary table 2. Accordingly, the atmosphere of thefirst process area 91 is completely separated from the atmosphere of theauxiliary area 90 andsecond process area 92, and the BTBAS gas is exhausted to theexhaust port 61 while the ethanol gas and O2 gas are exhausted to theexhaust port 62. Consequently, the BTBAS gas is not mixed with the ethanol gas and O2 gas in these atmospheres. - In this embodiment, as described above, the inner peripheral wall of the container
main body 12 is recessed outward below the second ceiling surfaces 45 near the first andsecond process areas exhaust ports - Consequently, there is no vapor phase reaction caused between the BTBAS gas and the ethanol and O2 gas inside the
vacuum container 1, and so it is possible to make generation of reaction by-products very small and thereby to suppress problems concerning particle generation. - The rotary table 2 includes the
dimples 24, for respectively placing wafers W therein, at five positions arrayed in the rotational direction of the rotary table 2, so that the wafers W passes through theareas heating lamp 210, before the BTBAS gas is adsorbed thereon. However, these states do not specifically adversely affect the film formation. - After the film formation process is finished, the supply of the gases is stopped and the interior of the
vacuum container 1 is vacuum-exhausted. Then, the rotation of the rotary table 2 is stopped, and the wafers W are sequentially unloaded from thevacuum container 1 by thetransfer arm 10 in operations reverse to those of loading. - Next, an explanation will be given of the second embodiment, with reference to
FIGS. 16 , 17A, and 17B. In this embodiment, anozone activating injector 370 is used in place of theplasma injector 250 as the second reactive gas supply means. Theozone activating injector 370 is disposed to extend in a radial direction of the rotary table 2. As shown inFIGS. 17A and 17B , theinjector 370 includes agas nozzle 371 for supplying ozone gas and aceramic heater 372 disposed inside the gas nozzle. Thegas nozzle 371 horizontally and linearly extends above the wafers W from the sidewall of thevacuum container 1 toward the rotational center of the rotary table 2, as in thereactive gas nozzle 31 and so forth. This nozzle includes agas introducing portion 373 at the proximal end attached outside the sidewall of thevacuum container 1. Thegas nozzle 371 is connected to asupply source 377 of the second reactive gas or ozone (O3) gas by agas supply line 376 equipped with avalve 374 and aflow rate regulator 375. - The
gas nozzle 371 has a plurality of gas delivery holes 378 formed therein and facing right below to deliver the reactive gas downward. The gas delivery holes 378 have a bore diameter of e.g., 0.5 mm and are arrayed at regular intervals, such as 10 mm, over the nozzle longitudinal direction (a radial direction of the rotary table 2). - The long
cylindrical heater 372 made of, e.g., a ceramic is disposed inside thegas nozzle 371 such that it extends coaxially through thegas nozzle 371 from its proximal end to the distal end. Theheater 372 and the inner wall of thegas nozzle 371 form a gap of, e.g., about 1 mm therebetween, in which O3 gas is introduced. Further, the proximal end of theheater 372 is connected to apower supply 380 through anelectric supply line 379. - The
heater 372 is configured to heat the O3 gas supplied into thegas nozzle 371 to a temperature for generating O3 radicals, such as about 250° C. The O3 gas supplied into thegas nozzle 371 flows through the gap inside thegas nozzle 371, while it is heated to a temperature of, e.g., about 250° C. by theheater 372, and generates O3 radicals. The O3 radicals thus generated are supplied from the delivery holes 378 onto the wafers W on the rotary table 2. - As described above, in this embodiment, the O3 gas is pre-heated to a temperature of, e.g., about 250° C., and O3 radicals thereby generated are supplied onto the wafers W. Consequently, the oxidation reaction of the siloxane polymer is efficiently promoted even if the temperature of the wafers W is set at about 50 to 100° C., which is lower than the O3 activation point.
- Next, an explanation will be given of the third embodiment, with reference to
FIG. 18 . In this embodiment, in addition to theseparation gas nozzles heating gas nozzle 480 is disposed to supply a heating gas, such as heated N2 gas, onto the surface of the wafers W. In this embodiment, theheating gas nozzle 480 is present between the second separation area D2 andauxiliary gas nozzle 200, and has the same structure as the secondseparation gas nozzle 42 described above.FIG. 18 shows acoupler 480 a, agas supply line 480 b, avalve 480 c, aflow rate regulator 480 d, an N2 gas supply source 480 e, and aheating portion 480 f. Where theheating gas nozzle 480 is arranged as in this embodiment, there is no need for thegas supply line 42 b of the secondseparation gas nozzle 42 to supply a heated separation gas. Accordingly, in this embodiment, theseparation gas nozzle 42 supplies the separation gas set at, e.g., room temperature. The location of theheating gas nozzle 480 is not limited to the example described above, and thenozzle 480 may be located at a position downstream or upstream from the secondseparation gas nozzle 42, as long as it is present between thereactive gas nozzle 31 andauxiliary gas nozzle 200. - [Modifications]
- In the embodiments described above, the auxiliary gas supplied from the
auxiliary gas nozzle 200 is ethanol gas. The auxiliary gas may be another alcohol, such as methanol (CH3OH), purified water (H2O), or hydrogen peroxide solution (H2O2). In other words, the auxiliary gas can be a compound gas including a hydroxyl group (OH group). For example, where the auxiliary gas is purified water, the purified water gas reacts with the BTBAS gas condensed on the surface of the wafer W to form a silanol in accordance with a reaction formula (2), for example. -
BTBAS+H2O→(—SiO—)n+CH3C—NH2↑ (2) - The intermediate product, (—SiO—)n, generated by this reaction is a product less volatile than the BTBAS condensed substance, as in the siloxane polymer described above.
- In the present invention, the silanol formation step is not necessarily required. The liquefy BTBAS preferentially adsorbed on the bottom of the
depressed portions 230 by the vaporization step may be subjected to an oxidation step by performing oxygen plasma irradiation or activated O3 gas supply on the liquefy BTBAS. In this case, theauxiliary gas nozzle 200 is not disposed while the plasma injector 250 (or ozone gas activating injector 370) andheating lamp 210 are disposed downstream from theseparation gas nozzle 42. Even in this case arranged to repeatedly perform the BTBAS gas condensation step, the vaporization step by the heated N2 gas, and the oxidation step by the oxygen plasma irradiation or activated ozone gas supply, it is possible to improve characteristics for embedding a film by preferentially increasing deposition on the bottom of thedepressed portions 230. - The temperature of the separation gas supplied in the first separation area D1 is not necessarily set at room temperature. This temperature merely needs to be set such that the temperature of each wafer W heated in the area below the
heating lamp 210 is adjusted to be not higher than the BTBAS gas condensation temperature before the wafer W reaches thefirst process area 91 after it passes through the first separation area D1. In this case, the supply temperature of the separation gas is set in light of the rotational speed of the rotary table 2, the position of thereaction nozzle 31, the size of the first separation area D1, the position of thefirst heating lamp 210, and the wafer heating temperature by theheating lamp 210. - When the oxidation step is performed by oxygen plasma, the plasma generation gas may contain, in addition to oxygen gas, Ar gas or a gas mixture of Ar gas and H2 gas. Ar gas used in this way provides the effect of forming SiO2 bonds in the film and excluding SiOH bonds therefrom.
- In the embodiments described above, the
heating lamp 210 is kept supplied with electricity during the film formation process, so that a heating process is performed by theheating lamp 210 on the reaction product in each rotation of the rotary table 2 (each cycle). However, theheating lamp 210 may be supplied with electricity to perform a heating process after the cycle of the BTBAS gas condensation step, vaporization step, silanol formation step (which may be excluded), and oxidation step is repeated a plurality of times, such as 20 times. - In this case, after the rotary table 2 is rotated a plurality of times to laminate a plurality of reaction product layers, the supply of the gases other than the separation gas is stopped and the
heating lamp 210 is turned on. In this state, the rotary table 2 is rotated once for the respective wafers W to sequentially pass below theheating lamp 210. With this operation, a film of high quality can be obtained. - As regards the ceiling surfaces 44 of the separation areas D, their portions upstream from the
separation gas nozzles parts 4 have a sector shape, as described above. - The lower ceiling surfaces 44 are preferably disposed on the opposite sides of each separation gas supply means in the rotational direction. However, in place of the projecting
parts 4 disposed on the opposite sides of each of theseparation gas nozzles separation gas nozzles first process area 91 andsecond process area 92 by the gas curtains. - The temperature adjusting mechanism for adjusting the temperature of the wafers W to a temperature, at which the first reactive gas is adsorbed and condensed, may be formed of a lamp heating unit. The temperature adjusting mechanism may be disposed above the rotary table 2 in place of the lower side, or may be disposed above and below the rotary table 2. Further, where the wafers W need to be set at a temperature below room temperature, due to the process gas type, the
vacuum container 1 may be equipped with a cooling mechanism using a chiller or liquid nitrogen. - The positions of the
nozzles heating lamp 210 may be varied, as needed. They can be arranged in any fashion as long as a cycle is repeated a number of times such that the reactive gases are exhausted without being mixed with each other, the BTBAS is adsorbed and condensed on the surface of the wafer W and is then re-vaporized by the heated N2 gas, and the intermediate product is generated from the BTBAS by the ethanol gas and is then oxidized by oxygen plasma or O3 gas radicals. - In place of the
heating lamp 210, theplasma injector 250 may be configured to reform the reaction product on the wafers W. Such a modification is effective particularly where the second reactive gas supply means is formed of an ozone activating injector. Where the plasma reformation is adopted, Si—O—Si bonds with three-dimensional bonds are formed and improve the film quality, such as the etching resistance. In this case, theplasma injector 250 serves as oxygen plasma supply means for supplying a gas containing oxygen while turning it into plasma to reform the reaction product on the wafers W. - The first reactive gas may be TEOS (tetraethoxy silane), DIPAS (diisopropylamino silane), or 3DMAS (trisdimethylamino silane), in place of BTBAS. The present invention may be applied to a case where the rotary table 2 is designed to place only one wafer W thereon.
- Additional advantages and modifications will readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details and representative embodiments shown and described herein. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.
Claims (20)
1. A film formation apparatus for a semiconductor process for forming a thin film on a target object by use of first and second reactive gases, the apparatus comprising:
a vacuum container;
an exhaust system configured to exhaust gas from inside the vacuum container;
a rotary table disposed inside the vacuum container and configured to place the target object thereon;
a rotating mechanism configured to rotate the rotary table;
a temperature adjusting mechanism configured to set the target object on the rotary table to a temperature at which the first reactive gas is condensed;
a first reactive gas supply section disposed inside the vacuum container and configured to supply the first reactive gas onto the target object on the rotary table to adsorb a condensed substance of the first reactive gas onto the target object;
a vaporizing section disposed inside the vacuum container and configured to heat the target object on the rotary table to partly vaporize the condensed substance; and
a second reactive gas supply section disposed inside the vacuum container and configured to supply the second reactive gas in an activated state onto the target object on the rotary table and to cause the second reactive gas to react with the condensed substance to form a reaction product,
wherein the first reactive gas supply section, the vaporizing section, and the second reactive gas supply section are disposed in this order in a rotational direction of the rotary table.
2. The apparatus according to claim 1 , wherein the second reactive gas supply section includes an activating mechanism configured to generate plasma of the second reactive gas or heat the second reactive gas.
3. The apparatus according to claim 1 , wherein the apparatus further comprises an auxiliary gas supply section disposed between the vaporizing section and the second reactive gas supply section in the rotational direction of the rotary table and configured to transform the condensed substance adsorbed on the target object on the rotary table into a secondary substance less volatile than condensed substance.
4. The apparatus according to claim 3 , wherein the first reactive gas is a silicon source gas and the auxiliary gas is a gas for transforming the condensed substance into a substance containing one or both of hydroxyl group and moisture as the secondary substance.
5. The apparatus according to claim 1 , wherein the apparatus further comprises a reformation heating portion configured to heat the target object on the rotary table to reform the reaction product.
6. The apparatus according to claim 1 , wherein the second reactive gas supply section includes an activating mechanism configured to generate plasma of the second reactive gas, the activating mechanism also serving as a plasma supply section for reforming the reaction product.
7. The apparatus according to claim 1 , wherein the apparatus further comprises first and second separation sections respectively disposed between the second reactive gas supply section and the first reactive gas supply section and between the first reactive gas supply section and the second reactive gas supply section in the rotational direction of the rotary table and each configured to supply an inactive gas as a separation gas for separating gas atmospheres onto the target object on the rotary table.
8. The apparatus according to claim 3 , wherein the apparatus further comprises first and second separation sections respectively disposed between the second reactive gas supply section and the first reactive gas supply section and between the first reactive gas supply section and the auxiliary gas supply section in the rotational direction of the rotary table and each configured to supply an inactive gas as a separation gas for separating gas atmospheres onto the target object on the rotary table.
9. The apparatus according to claim 7 , wherein the vaporizing section also serves as the second separation section and is configured to supply the separation gas in a heated state onto the target object on the rotary table.
10. The apparatus according to claim 3 , wherein the vacuum container includes a transfer port formed between the auxiliary gas supply section and the second reactive gas supply section in the rotational direction of the rotary table and configured to allow the target object to be loaded and unloaded therethrough between the rotary table and a position outside the vacuum container.
11. The apparatus according to claim 1 , wherein the rotary table is equipped with a plurality of support pins for supporting the target object, the support pins being configured to assist the target object to be loaded and unloaded to and from the rotary table.
12. The apparatus according to claim 1 , wherein the exhaust system includes an exhaust port opened inside the vacuum container at a position outside the rotary table in a radial direction.
13. The apparatus according to claim 1 , wherein the temperature adjusting mechanism includes a heater disposed below the rotary table inside the vacuum container.
14. The apparatus according to claim 13 , wherein a heater accommodating space is defined by a cover member disposed outside the heater in a radial direction and extending upward from a bottom of the vacuum container to a position close to a lower surface of the rotary table, and a purge gas supply system is connected to the heater accommodating space to supply an inactive gas as a purge gas.
15. The apparatus according to claim 1 , wherein the first and second reactive gas supply sections respectively include first and second reactive gas nozzles disposed above the rotary table inside the vacuum container and configured to respectively supply the first and second reactive gases downward.
16. The apparatus according to claim 1 , wherein the vaporizing section includes a gas nozzle disposed above the rotary table inside the vacuum container and configured to supply a heated inactive gas downward.
17. The apparatus according to claim 7 , wherein each of the first and second separation sections includes a separation gas nozzle disposed above the rotary table inside the vacuum container and configured to supply the separation gas downward, and a ceiling of the vacuum container is set lower on opposite sides of the separation gas nozzle in the rotational direction of the rotary table.
18. The apparatus according to claim 5 , wherein the reformation heating portion includes a reformation heater disposed above the rotary table inside the vacuum container, and the reformation heater is present between the second reactive gas supply section and the first reactive gas supply section in the rotational direction of the rotary table.
19. The apparatus according to claim 1 , wherein the apparatus further comprises a separation gas supply system disposed above a center of the rotary table inside the vacuum container and configured to supply an inactive gas as a separation gas for separating gas atmospheres.
20. The apparatus according to claim 1 , wherein the rotary table is configured to place a plurality of target objects thereon side by side in the rotational direction of the rotary table.
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US14/644,703 Active US9580802B2 (en) | 2009-09-01 | 2015-03-11 | Film formation method and apparatus for semiconductor process |
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JP (1) | JP5444961B2 (en) |
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Also Published As
Publication number | Publication date |
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TWI452645B (en) | 2014-09-11 |
US20150184293A1 (en) | 2015-07-02 |
CN102002685A (en) | 2011-04-06 |
CN102002685B (en) | 2014-02-12 |
KR20110025114A (en) | 2011-03-09 |
JP5444961B2 (en) | 2014-03-19 |
JP2011054742A (en) | 2011-03-17 |
US9580802B2 (en) | 2017-02-28 |
KR101407112B1 (en) | 2014-06-13 |
TW201125061A (en) | 2011-07-16 |
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