US20040154535A1 - Modular electrochemical processing system - Google Patents
Modular electrochemical processing system Download PDFInfo
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- US20040154535A1 US20040154535A1 US10/770,737 US77073704A US2004154535A1 US 20040154535 A1 US20040154535 A1 US 20040154535A1 US 77073704 A US77073704 A US 77073704A US 2004154535 A1 US2004154535 A1 US 2004154535A1
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- 238000012545 processing Methods 0.000 title claims abstract description 164
- 239000000758 substrate Substances 0.000 claims abstract description 175
- 238000004891 communication Methods 0.000 claims abstract description 17
- 238000007747 plating Methods 0.000 claims description 80
- 239000012530 fluid Substances 0.000 claims description 48
- 238000004140 cleaning Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000007772 electroless plating Methods 0.000 claims description 2
- 230000004913 activation Effects 0.000 claims 8
- 238000000034 method Methods 0.000 abstract description 45
- 238000003672 processing method Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 30
- 239000012528 membrane Substances 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 11
- 238000001035 drying Methods 0.000 description 7
- 238000007654 immersion Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000011324 bead Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000007781 pre-processing Methods 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000012805 post-processing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1632—Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
Definitions
- Embodiments of the invention generally relate to a modular dry in dry out electrochemical processing system.
- Metallization of sub-quarter micron sized features is a foundational technology for present and future generations of integrated circuit manufacturing processes. More particularly, in devices such as ultra large scale integration-type devices, i.e., devices having integrated circuits with more than a million logic gates, the multilevel interconnects that lie at the heart of these devices are generally formed by filling high aspect ratio, i.e., greater than about 4:1, interconnect features with a conductive material, such as copper or aluminum. Conventionally, deposition techniques such as chemical vapor deposition (CVD) and physical vapor deposition (PVD) have been used to fill these interconnect features. However, as the interconnect sizes decrease and aspect ratios increase, void-free interconnect feature fill via conventional metallization techniques becomes increasingly difficult. Therefore, plating techniques, i.e., electrochemical plating (ECP) and electroless plating, have emerged as promising processes for void free filling of sub-quarter micron sized high aspect ratio interconnect features in integrated circuit manufacturing processes.
- ECP electrochemical plating
- ECP plating processes are generally multistage processes, wherein a substrate is prepared for plating, i.e., one or more preplating processes, brought to a plating cell for a plating process, and then the substrate is generally post treated after the plating process.
- the preplating process generally includes processes such as depositing a barrier/diffusion layer and/or a seed layer on the substrate, precleaning the seed layer and/or substrate surface prior to commencing plating operations, and other preplating operations that are generally known in the art.
- the substrate is generally transferred to a plating cell where the substrate is contacted with a plating solution and the desired plating layer is deposited on the substrate.
- a post treatment cell such as a rinse cell, bevel clean cell, drying cell, or other post treatment process cell generally used in the semiconductor art.
- Embodiments of the invention may provide a substrate processing system, wherein the substrate processing system includes 2 primary components.
- the first component is an interface section having at least one first substrate transfer robot positioned therein
- the second component is at least one processing module in communication with the interface section, the at least one processing module having a pretreatment and post treatment cell, a processing cell, and a second substrate transfer robot positioned therein.
- Embodiments of the invention may further provide a substrate processing system, wherein the processing system includes an interface section having at least one first substrate transfer robot positioned therein, and at least one processing module in communication with the interface section, the at least one processing module having a pretreatment and post treatment cell, a processing cell, and a second substrate transfer robot positioned therein.
- the processing system includes an interface section having at least one first substrate transfer robot positioned therein, and at least one processing module in communication with the interface section, the at least one processing module having a pretreatment and post treatment cell, a processing cell, and a second substrate transfer robot positioned therein.
- Embodiments of the invention may further provide an electrochemical processing system.
- the processing system may include a factory interface having a substrate transfer robot positioned therein, the factory interface being configured to communicate with at least one substrate containing cassette, and at least one substrate processing module in detachable communication with the factory interface, each of the at least one substrate processing modules including a pretreatment/post treatment cell and an electrochemical processing cell.
- FIG. 1 illustrates a plan view of an exemplary processing system of the invention.
- FIG. 2 illustrates a plan view of an exemplary processing module of the invention.
- FIG. 3 illustrates a perspective and partial sectional view of an exemplary pretreatment/post treatment cell of the invention.
- FIG. 4 illustrates a perspective and partial sectional view an exemplary plating cell of the invention.
- Embodiments of the invention generally provide a modular dry in dry out type processing system. More particularly, embodiments of the invention generally provide a plurality of substrate processing modules that are interconnected by an interface section. Each of the processing modules are generally configured to receive substrates from the interface section for processing.
- the interface section which is often termed a factory interface (FI) in the semiconductor art, generally includes at least one substrate transfer robot configured to transport substrates from a source, i.e., a substrate cassette positioned in communication with the FI, to one or more of the processing modules, and then back to one of the sources.
- FI factory interface
- Each of the processing modules generally includes at least two individual processing stations or cells, along with a wet transfer robot positioned within the processing module.
- each of the processing modules may include a first processing cell or station configured to conduct pre and post plating processes, along with a second processing cell or station configured to conduct plating processes.
- the processing module robot is generally configured to transfer substrates between the respective cells within the module. Additionally, although not illustrated in the figures, the processing module robot may also be configured to access a substrate handoff point, i.e., a pad may be positioned between the FI robot and the processing module robot so that the FI robot may drop off a substrate for pickup by the processing module robot, and vice versa.
- each of the respective processing modules may have a handoff location that may be used for the robot positioned in the processing module to place a processed substrate on so that the robot in the adjacent interface may then pick up the substrate from the handoff location, which may eliminate problems associated with transferring a substrate from a wet processing blade to a dry processing blade. Therefore, in this configuration, dry substrates may be supplied to the respective processing modules by the FI substrate transfer robot for processing. The dry substrates may be pretreated, plated, and post treated within the processing module, and then the dry substrate may once again be removed from the module by the substrate transfer robot in the FI.
- FIG. 1 illustrates a plan view of an exemplary processing system 100 of the invention.
- Processing system 100 which may be an electrochemical plating system, for example, generally includes an FI 101 and a plurality of processing modules 102 .
- FI 101 is configured to communicate with one or more substrate containing cassettes 103 , and more particularly, to remove substrates from the cassettes 103 for processing in system 100 , and then when the processing steps are completed, FI 101 is configured to return the processed substrates to one or more of the cassettes 103 .
- FI 101 includes at least one substrate transfer robot 104 .
- Robot 104 may include one or more linear track-type robots, as illustrated in FIG. 1, however, the present invention is not limited to this configuration, and therefore, various robots known in the semiconductor art may be implemented without departing from the scope of the invention.
- Each of the respective processing modules 102 is in communication with the FI 101 , and therefore, each of processing modules 102 may receive and transmit substrates to/from the FI 101 . More particularly, each of the respective processing modules 102 may receive substrates from FI 101 for processing and return substrates that have been processed in module 102 to the FI 101 for return to cassettes 103 .
- embodiments of the invention are generally directed to a plurality of processing modules interconnected by a factory interface, the invention is not intended to be limited to this configuration.
- conventional semiconductor processing systems have implemented a FI in conjunction with a substrate transfer chamber or enclosure, wherein the substrate transfer chamber is in communication with a plurality of processing stations.
- Some embodiments of the invention have combined the FI and the substrate transfer chamber, and therefore, have eliminated a substrate transfer step (transfer of the substrate between the FI and the substrate transfer chamber).
- FIG. 1 depicts 4 processing modules 102 in communication with FI 101
- the invention is not limited to any particular number of processing modules 102 that may be placed in communication with the FI.
- FI 101 may include or be in communication with additional chambers, such as an annealing chamber, a metrology chamber, or other chamber/cell that may be useful in a semiconductor processing system.
- FIG. 2 illustrates a plan view of an exemplary processing module 102 of the invention.
- processing module 102 may include a processing module transfer robot 203 , a substrate pretreatment/post treatment cell 201 , and a substrate processing cell 202 .
- the processing module substrate transfer robot 203 is generally configured to transport one or more substrates between the pretreatment cell 201 , the processing cell 202 , and the FI robot 104 in any order, i.e., robot 203 may access any of the three components (generally only the pretreatment cell 201 and processing cell 202 , however it may access the FI robot 104 or the optional handoff pad or station) in any order without-limit.
- processing module 102 may receive a dry substrate from FI robot 104 for processing.
- the dry substrate may first be received at the pretreatment cell 201 , where any pre-processing steps may be conducted on the substrate.
- Exemplary preprocessing steps may include rinsing, cleaning, or otherwise treating the surface of a substrate with a fluid or gas.
- the substrate may be removed from pretreatment cell 201 and transported via robot 203 to processing cell 202 , where processing steps are conducted on the substrate.
- Exemplary processes that may be conducted in processing cell 201 include, but are not limited to, electrochemical deposition, electroless deposition, electrochemical deplating, and other wet processing-type semiconductor fabrication processes.
- robot 203 once again may transport the substrate to treatment cell 201 , where post treatment processes may be conducted on the substrate.
- Exemplary post treatment steps include cleaning, edge bead removal, rinsing, drying, and other processes known to be conducted on semiconductor substrates after a wet processing step.
- the substrate may be removed from processing module 102 by FI robot 104 .
- FIG. 3 illustrates a perspective and partial sectional view of an exemplary pretreatment/post treatment cell 201 of the invention.
- the pretreatment/post treatment cell 201 may generally include a cell configured to rinse or otherwise treat a substrate with a processing fluid before or subsequent to a substrate processing step conducted in the adjacent processing cell 202 .
- the exemplary cell 201 includes a processing basin 301 that has a substrate support member 302 positioned in a bottom portion thereof.
- the substrate support member 302 as illustrated in FIG. 3, is generally configured to support a substrate in a face up configuration, in a configuration wherein the working or production surface of the substrate is facing upward or away from the support member 302 . Further, substrate support member 302 is configured to secure a substrate thereto and rotate.
- Cell 201 further includes a pivotally mounted fluid dispensing arm 303 configured to selectively dispense a processing fluid onto the production surface of a substrate positioned on the substrate support member.
- pivotal arm 303 may be pivoted to the center of the substrate and a rinsing solution, such as DI, for example, may be dispensed from a fluid dispensing nozzle positioned at a distal end of arm 303 .
- the substrate support member 302 may be rotated and the arm may then be pivoted radially outward, which generally operates to rinse the substrate from the center outward.
- the substrate may be secured to the substrate support member 302 and rotated, while arm 303 is positioned to precisely dispense an etchant onto a perimeter portion of the rotating substrate.
- the etchant may then operate to remove material from the edge and bevel of the substrate.
- the pretreatment/post treatment cell 201 may further be configured to dry one or more substrates, through, for example, a spin rinse dry process, as is generally known in the semiconductor art.
- exemplary processes that may be conducted by the pretreatment/post treatment cell include, but are not limited to, prerinsing substrates, pretreating substrates before plating, removing contaminant layers from substrates, spin rinse drying substrates, conducting edge bead removal processes on substrates, and other processes that are known in the semiconductor art.
- pretreatment/post treatment cell may generally be configured to prerinse or pretreat a substrate to be plated with a rinsing or pretreatment solution prior to the substrate being transferred to the adjacent processing cell, which would be configured as an electrochemical plating cell.
- exemplary pretreatment processes for electrochemical plating systems may include prerinsing with deionized water (DI), pretreating the substrate surface with a fluid configured to form or remove an oxide layer on the substrate surface, pretreating the surface of the substrate with a fluid configured to enhance some portion of a subsequent plating process, or other pretreatment process known in the semiconductor art.
- DI deionized water
- the pretreatment/post treatment cell may be configured to receive substrates from the adjacent plating cell for processing after the plating process is complete.
- Exemplary post treatment processes include rinsing the substrate to remove residual plating solution from the substrate surface, conducting an edge bead removal or bevel clean process, and/or spin rinse drying the substrate.
- FIG. 4 illustrates a perspective and partial sectional view of an exemplary electrochemical plating cell 400 of the invention.
- Plating cell 400 generally includes an outer basin 401 and an inner basin 402 positioned within outer basin 401 .
- Inner basin 402 is generally configured to contain a plating solution that is used to plate a metal, e.g., copper, onto a substrate during an electrochemical plating process.
- the plating solution is generally continuously supplied to inner basin 402 (at about 1-5 gallons per minute for a 10 liter plating cell, for example), and therefore, the plating solution continually overflows the uppermost point of inner basin 402 and runs into outer basin 401 .
- plating cell 400 is generally positioned at a tilt angle, i.e., the frame portion 403 of plating cell 400 is generally elevated on one side such that the components of plating cell 400 are tilted between about 3° and about 30°. Therefore, in order to contain an adequate depth of plating solution within inner basin 402 during plating operations, the uppermost portion of basin 102 may be extended upward on one side of plating dell 400 , such that the uppermost point of inner basin 402 is generally horizontal and allows for contiguous overflow of the plating solution supplied thereto around the perimeter of basin 402 .
- the frame member 403 of plating cell 400 generally includes an annular anode base member 404 secured to frame member 403 . Since frame member 403 is elevated on one side, the upper surface of base member 404 is generally tilted from the horizontal at an angle that corresponds to the angle of frame member 403 relative to a horizontal position.
- Base member 404 includes an annular or disk shaped recess formed therein, the annular recess being configured to receive a disk shaped anode member 405 .
- Base member 404 further includes a plurality of fluid inlets/drains 409 positioned on a lower surface thereof.
- Each of the fluid inlets/drains 409 are generally configured to individually supply or drain a fluid to or from either the anode compartment or the cathode compartment of plating cell 400 .
- Anode member 405 generally includes a plurality of slots 407 formed therethrough, wherein the slots 407 are generally positioned in parallel orientation with each other across the surface of the anode 405 . The parallel orientation allows for dense fluids generated at the anode surface to flow downwardly across the anode surface and into one of the slots 407 .
- Plating cell 400 further includes a membrane support assembly 406 .
- Membrane support assembly 406 is generally secured at an outer periphery thereof to base member 404 , and includes an interior region 408 configured to allow fluids to pass therethrough via a sequence of oppositely positioned slots and bores.
- the membrane support assembly may include an o-ring type seal positioned near a perimeter of the membrane, wherein the seal is configured to prevent fluids from traveling from one side of the membrane secured on the membrane support 406 to the other side of the membrane.
- the plating cell 400 of the invention provides a small volume (electrolyte volume) processing cell that may be used for copper electrochemical plating processes, for example.
- Plating cell 400 may be horizontally positioned or positioned in a tilted orientation, i.e., where one side of the cell is elevated vertically higher than the opposing side of the cell. If plating cell 400 is implemented in a tilted configuration, then a tilted head assembly and substrate support member may be utilized to immerse the substrate at a constant immersion angle, i.e., immerse the substrate such that the angle between the substrate and the upper surface of the electrolyte does not change during the immersion process. Further, the immersion process may include a varying immersion velocity, i.e., an increasing velocity as the substrate becomes immersed in the electrolyte solution. The combination of the constant immersion angle and the varying immersion velocity operates to eliminate air bubbles on the substrate surface.
- a substrate is first immersed into a plating solution contained within inner basin 402 .
- the plating solution which generally contains copper sulfate, chlorine, and one or more of a plurality of organic plating additives (levelers, suppressors, accelerators, etc.) configured to control plating parameters
- an electrical plating bias is applied between a seed layer on the substrate and the anode 405 positioned in a lower portion of plating cell 400 .
- the electrical plating bias generally operates to cause metal ions in the plating solution to deposit on the cathodic substrate surface.
- the plating solution supplied to inner basin 402 is continually circulated through inner basin 402 via fluid inlet/outlets 409 .
- the plating solution may be introduced in plating cell 400 via a fluid inlet 409 .
- the solution may travel across the lower surface of base member 404 and upward through one of fluid apertures 406 .
- the plating solution may then be introduced into the cathode chamber via a channel formed into plating cell 400 that communicates with the cathode chamber at a point above membrane support 406 .
- the plating solution may be removed from the cathode chamber via a fluid drain positioned above membrane support 106 , where the fluid drain is in fluid communication with one of fluid drains 109 positioned on the lower surface of base member 404 .
- base member 404 may include first and second fluid apertures positioned on opposite sides of base member 404 .
- the oppositely positioned fluid apertures may operate to individually introduce and drain the plating solution from the cathode chamber in a predetermined direction, which also allows for flow direction control.
- the flow control direction provides control over removal of light fluids at the lower membrane surface, removal of bubbles from the anode chamber, and assists in the removal of dense or heavy fluids from the anode surface via the channels 402 formed into base 404 .
- Diffusion plate 410 which is generally a ceramic or other porous disk shaped member, generally operates as a fluid flow restrictor to even out the flow pattern across the surface of the substrate. Further, the diffusion plate 410 operates to resistively damp electrical variations in the electrochemically active area the anode or cation membrane surface, which is known to reduce plating uniformities.
- the ceramic diffusion plate 410 may be replaced by a hydrophilic plastic member, i.e., a treated PE member, an PVDF member, a PP member, or other material that is known to be porous and provide the electrically resistive damping characteristics provided by ceramics.
- the plating solution introduced into the cathode chamber which is generally a plating catholyte solution, i.e., a plating solution with additives, is not permitted to travel downward through the membrane (not shown) positioned on the lower surface of membrane support assembly 406 into the anode chamber, as the anode chamber is fluidly isolated from the cathode chamber by the membrane.
- the anode chamber includes separate individual fluid supply and drain sources configured to supply an anolyte solution to the anode chamber.
- the solution supplied to the anode chamber which may generally be copper sulfate in a copper electrochemical plating system, circulates exclusively through the anode chamber and does not diffuse or otherwise travel into the cathode chamber, as the membrane positioned on membrane support assembly 406 is not fluid permeable in either direction.
- anolyte i.e., a plating solution without additives, which may be referred to as a virgin solution
- anolyte may be communicated to the anode chamber via an individual fluid inlet 409 .
- Fluid inlet 409 is in fluid communication with a fluid channel formed into a lower portion of base member 404 and the fluid channel communicates the anolyte to apertures configured to circulate the respective fluids to the respective chambers above and below the membrane.
- a catholyte solution i.e., a solution with plating additives therein, may be separately communicated to the cathode compartment, i.e., the volume above the membrane.
- system 100 may be used to provide a substrate to a processing module 102 in a dry form, i.e., the surface of the substrate is not wet from a previous wet processing step.
- substrates having a seed layer deposited thereon may be introduced into system 100 via cassettes 103 .
- Robot 104 may operate to deliver the substrate having a seed layer formed thereon (a dry substrate) to processing module 102 .
- Module 102 generally receives the substrate in the preprocessing cell 201 , where the substrate may be rinsed and/or cleaned in accordance with a specific processing recipe. Once the desired preprocessing steps are completed in cell 201 , the substrate is generally transferred to the processing cell 202 via robot 203 .
- the substrate may be plated, deplated, or otherwise processed.
- the substrate is generally transferred back to cell 201 for post processing steps.
- Exemplary post processing steps include rinsing, cleaning, edge bead removal, drying, and/or other known semiconductor post processing steps.
- one step generally conducted in cell 201 is a spin rinse dry process, as system 100 is generally configured to supply a dry substrate to processing module 102 and receive a dry processed substrate from processing module when the processing steps are complete.
- FI 101 is generally maintained in a clean and dry manner and is not likely to contaminate other substrates traveling therethrough for processing in other processing modules 102 .
- processing modules 102 are removable, and more particularly, processing modules are interchangeable. Therefore, system 100 has the ability to shut down an individual processing module 102 when a fault occurs, service or remove the faulty processing module 102 from FI 101 , and/or replace it with a new processing module 102 , without interrupting the operation of system 100 . Additionally the removability of modules 102 allows system 100 to be scalable, as additional processing modules may be added to the interface section as needed. For example, embodiments of the invention contemplate that annealing chambers or modules, electroless chambers or modules, polishing modules or chambers, other electrolytic processing modules, and/or chemical polishing modules.
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Abstract
Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes two primary components. The first component is an interface section having at least one first substrate transfer robot positioned therein, and the second component is at least one processing module in communication with the interface section, the at least one processing module having a pretreatment and post treatment cell, a processing cell, at a second substrate transfer robot positioned therein. The substrate processing method generally includes transporting a dry substrate to a processing module via a dry interface. Once the substrate is positioned in the processing module, a robot transfers the substrate between a treatment cell and a processing cell contained within the processing module to complete a predetermined sequence of processing steps. Once the processing steps are completed, the treatment cell generally dries the substrate and then the substrate is transferred back to the dry interface.
Description
- This application is a continuation of co-pending U.S. patent application Ser. No. 10/274,721, filed Oct. 18, 2002. The aforementioned related patent application is herein incorporated by reference.
- 1. Field of the Invention
- Embodiments of the invention generally relate to a modular dry in dry out electrochemical processing system.
- 2. Description of the Related Art
- Metallization of sub-quarter micron sized features is a foundational technology for present and future generations of integrated circuit manufacturing processes. More particularly, in devices such as ultra large scale integration-type devices, i.e., devices having integrated circuits with more than a million logic gates, the multilevel interconnects that lie at the heart of these devices are generally formed by filling high aspect ratio, i.e., greater than about 4:1, interconnect features with a conductive material, such as copper or aluminum. Conventionally, deposition techniques such as chemical vapor deposition (CVD) and physical vapor deposition (PVD) have been used to fill these interconnect features. However, as the interconnect sizes decrease and aspect ratios increase, void-free interconnect feature fill via conventional metallization techniques becomes increasingly difficult. Therefore, plating techniques, i.e., electrochemical plating (ECP) and electroless plating, have emerged as promising processes for void free filling of sub-quarter micron sized high aspect ratio interconnect features in integrated circuit manufacturing processes.
- In an ECP process, for example, sub-quarter micron sized high aspect ratio features formed into the surface of a substrate (or a layer deposited thereon) may be efficiently filled with a conductive material, such as copper. ECP plating processes are generally multistage processes, wherein a substrate is prepared for plating, i.e., one or more preplating processes, brought to a plating cell for a plating process, and then the substrate is generally post treated after the plating process. The preplating process generally includes processes such as depositing a barrier/diffusion layer and/or a seed layer on the substrate, precleaning the seed layer and/or substrate surface prior to commencing plating operations, and other preplating operations that are generally known in the art. Once the preplating processes are complete, the substrate is generally transferred to a plating cell where the substrate is contacted with a plating solution and the desired plating layer is deposited on the substrate. Once the plating processes are complete, then the substrate is generally transferred to a post treatment cell, such as a rinse cell, bevel clean cell, drying cell, or other post treatment process cell generally used in the semiconductor art.
- However, one challenge associated with conventional plating systems is that the preplating operations, plating operations, and post plating operations are all generally conducted in separate cells. As such, a substantial amount of time is expended transferring substrates between the respective processing cells. This time required to transfer substrates between the respective processing cells or stations has a detrimental impact upon the system throughput. Furthermore, since several of the processes involved in electrochemical plating are wet processes, the transfer of substrates between processing cells inherently results in dripping, which may contribute to contamination and cell cleaning problems. Therefore, there is a need for an electrochemical plating system configured to minimize the transfer time between substrate pretreatment processes, plating processes, and post plating processes, as well as minimizing or eliminating the contamination and cleaning challenges created by wet substrate transfer processes.
- Embodiments of the invention may provide a substrate processing system, wherein the substrate processing system includes 2 primary components. The first component is an interface section having at least one first substrate transfer robot positioned therein, and the second component is at least one processing module in communication with the interface section, the at least one processing module having a pretreatment and post treatment cell, a processing cell, and a second substrate transfer robot positioned therein.
- Embodiments of the invention may further provide a substrate processing system, wherein the processing system includes an interface section having at least one first substrate transfer robot positioned therein, and at least one processing module in communication with the interface section, the at least one processing module having a pretreatment and post treatment cell, a processing cell, and a second substrate transfer robot positioned therein.
- Embodiments of the invention may further provide an electrochemical processing system. The processing system may include a factory interface having a substrate transfer robot positioned therein, the factory interface being configured to communicate with at least one substrate containing cassette, and at least one substrate processing module in detachable communication with the factory interface, each of the at least one substrate processing modules including a pretreatment/post treatment cell and an electrochemical processing cell.
- So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
- FIG. 1 illustrates a plan view of an exemplary processing system of the invention.
- FIG. 2 illustrates a plan view of an exemplary processing module of the invention.
- FIG. 3 illustrates a perspective and partial sectional view of an exemplary pretreatment/post treatment cell of the invention.
- FIG. 4 illustrates a perspective and partial sectional view an exemplary plating cell of the invention.
- Embodiments of the invention generally provide a modular dry in dry out type processing system. More particularly, embodiments of the invention generally provide a plurality of substrate processing modules that are interconnected by an interface section. Each of the processing modules are generally configured to receive substrates from the interface section for processing. The interface section, which is often termed a factory interface (FI) in the semiconductor art, generally includes at least one substrate transfer robot configured to transport substrates from a source, i.e., a substrate cassette positioned in communication with the FI, to one or more of the processing modules, and then back to one of the sources. Each of the processing modules generally includes at least two individual processing stations or cells, along with a wet transfer robot positioned within the processing module. For example, each of the processing modules may include a first processing cell or station configured to conduct pre and post plating processes, along with a second processing cell or station configured to conduct plating processes. The processing module robot is generally configured to transfer substrates between the respective cells within the module. Additionally, although not illustrated in the figures, the processing module robot may also be configured to access a substrate handoff point, i.e., a pad may be positioned between the FI robot and the processing module robot so that the FI robot may drop off a substrate for pickup by the processing module robot, and vice versa. Additionally, each of the respective processing modules may have a handoff location that may be used for the robot positioned in the processing module to place a processed substrate on so that the robot in the adjacent interface may then pick up the substrate from the handoff location, which may eliminate problems associated with transferring a substrate from a wet processing blade to a dry processing blade. Therefore, in this configuration, dry substrates may be supplied to the respective processing modules by the FI substrate transfer robot for processing. The dry substrates may be pretreated, plated, and post treated within the processing module, and then the dry substrate may once again be removed from the module by the substrate transfer robot in the FI.
- FIG. 1 illustrates a plan view of an exemplary processing system100 of the invention. Processing system 100, which may be an electrochemical plating system, for example, generally includes an
FI 101 and a plurality ofprocessing modules 102. FI 101 is configured to communicate with one or moresubstrate containing cassettes 103, and more particularly, to remove substrates from thecassettes 103 for processing in system 100, and then when the processing steps are completed,FI 101 is configured to return the processed substrates to one or more of thecassettes 103. In order to accomplish the substrate transfer processes associated with removing/replacing substrates incassettes 103, FI 101 includes at least onesubstrate transfer robot 104. Robot 104 may include one or more linear track-type robots, as illustrated in FIG. 1, however, the present invention is not limited to this configuration, and therefore, various robots known in the semiconductor art may be implemented without departing from the scope of the invention. Each of therespective processing modules 102 is in communication with theFI 101, and therefore, each ofprocessing modules 102 may receive and transmit substrates to/from theFI 101. More particularly, each of therespective processing modules 102 may receive substrates fromFI 101 for processing and return substrates that have been processed inmodule 102 to the FI 101 for return tocassettes 103. - Although embodiments of the invention are generally directed to a plurality of processing modules interconnected by a factory interface, the invention is not intended to be limited to this configuration. For example, conventional semiconductor processing systems have implemented a FI in conjunction with a substrate transfer chamber or enclosure, wherein the substrate transfer chamber is in communication with a plurality of processing stations. Some embodiments of the invention have combined the FI and the substrate transfer chamber, and therefore, have eliminated a substrate transfer step (transfer of the substrate between the FI and the substrate transfer chamber). Furthermore, although the illustration of an embodiment of the invention in FIG. 1 depicts4
processing modules 102 in communication withFI 101, the invention is not limited to any particular number ofprocessing modules 102 that may be placed in communication with the FI. Further, although not illustrated in FIG. 1, FI 101 may include or be in communication with additional chambers, such as an annealing chamber, a metrology chamber, or other chamber/cell that may be useful in a semiconductor processing system. - FIG. 2 illustrates a plan view of an
exemplary processing module 102 of the invention. In one embodiment of the invention,processing module 102 may include a processingmodule transfer robot 203, a substrate pretreatment/post treatment cell 201, and asubstrate processing cell 202. The processing modulesubstrate transfer robot 203 is generally configured to transport one or more substrates between thepretreatment cell 201, theprocessing cell 202, and theFI robot 104 in any order, i.e.,robot 203 may access any of the three components (generally only thepretreatment cell 201 andprocessing cell 202, however it may access theFI robot 104 or the optional handoff pad or station) in any order without-limit. Additionally, a valve or movable partition may be positioned betweenFI 101 andprocessing module 102. Therefore, in this configuration,processing module 102 may receive a dry substrate fromFI robot 104 for processing. The dry substrate may first be received at thepretreatment cell 201, where any pre-processing steps may be conducted on the substrate. Exemplary preprocessing steps may include rinsing, cleaning, or otherwise treating the surface of a substrate with a fluid or gas. Once the preprocessing steps are completed incell 201, the substrate may be removed frompretreatment cell 201 and transported viarobot 203 to processingcell 202, where processing steps are conducted on the substrate. Exemplary processes that may be conducted inprocessing cell 201 include, but are not limited to, electrochemical deposition, electroless deposition, electrochemical deplating, and other wet processing-type semiconductor fabrication processes. Once the processing steps are completed incell 202,robot 203 once again may transport the substrate totreatment cell 201, where post treatment processes may be conducted on the substrate. Exemplary post treatment steps include cleaning, edge bead removal, rinsing, drying, and other processes known to be conducted on semiconductor substrates after a wet processing step. Once the post treatment processes are completed, the substrate may be removed fromprocessing module 102 byFI robot 104. - FIG. 3 illustrates a perspective and partial sectional view of an exemplary pretreatment/
post treatment cell 201 of the invention. The pretreatment/post treatment cell 201 may generally include a cell configured to rinse or otherwise treat a substrate with a processing fluid before or subsequent to a substrate processing step conducted in theadjacent processing cell 202. Theexemplary cell 201 includes aprocessing basin 301 that has asubstrate support member 302 positioned in a bottom portion thereof. Thesubstrate support member 302, as illustrated in FIG. 3, is generally configured to support a substrate in a face up configuration, in a configuration wherein the working or production surface of the substrate is facing upward or away from thesupport member 302. Further,substrate support member 302 is configured to secure a substrate thereto and rotate.Cell 201 further includes a pivotally mountedfluid dispensing arm 303 configured to selectively dispense a processing fluid onto the production surface of a substrate positioned on the substrate support member. For example, in a rinsing process,pivotal arm 303 may be pivoted to the center of the substrate and a rinsing solution, such as DI, for example, may be dispensed from a fluid dispensing nozzle positioned at a distal end ofarm 303. Thesubstrate support member 302 may be rotated and the arm may then be pivoted radially outward, which generally operates to rinse the substrate from the center outward. Alternatively, if an edge bead removal process is to be conducted incell 201, then the substrate may be secured to thesubstrate support member 302 and rotated, whilearm 303 is positioned to precisely dispense an etchant onto a perimeter portion of the rotating substrate. The etchant may then operate to remove material from the edge and bevel of the substrate. It is to be noted, however, that embodiments of the invention are not limited to any particular substrate processing configurations. For example, although a face up processing configuration is illustrated, embodiments of the invention are not intended to be limited to this configuration, as embodiments of the present invention contemplate that both face up or face down-type configurations may be implemented without departing from the scope of the invention. - The pretreatment/
post treatment cell 201 may further be configured to dry one or more substrates, through, for example, a spin rinse dry process, as is generally known in the semiconductor art. As such, exemplary processes that may be conducted by the pretreatment/post treatment cell include, but are not limited to, prerinsing substrates, pretreating substrates before plating, removing contaminant layers from substrates, spin rinse drying substrates, conducting edge bead removal processes on substrates, and other processes that are known in the semiconductor art. In embodiments of the invention wherein system 100 is an electrochemical plating cell, pretreatment/post treatment cell may generally be configured to prerinse or pretreat a substrate to be plated with a rinsing or pretreatment solution prior to the substrate being transferred to the adjacent processing cell, which would be configured as an electrochemical plating cell. Exemplary pretreatment processes for electrochemical plating systems may include prerinsing with deionized water (DI), pretreating the substrate surface with a fluid configured to form or remove an oxide layer on the substrate surface, pretreating the surface of the substrate with a fluid configured to enhance some portion of a subsequent plating process, or other pretreatment process known in the semiconductor art. Further, the pretreatment/post treatment cell may be configured to receive substrates from the adjacent plating cell for processing after the plating process is complete. Exemplary post treatment processes include rinsing the substrate to remove residual plating solution from the substrate surface, conducting an edge bead removal or bevel clean process, and/or spin rinse drying the substrate. - FIG. 4 illustrates a perspective and partial sectional view of an exemplary
electrochemical plating cell 400 of the invention. Platingcell 400 generally includes anouter basin 401 and aninner basin 402 positioned withinouter basin 401.Inner basin 402 is generally configured to contain a plating solution that is used to plate a metal, e.g., copper, onto a substrate during an electrochemical plating process. During the plating process, the plating solution is generally continuously supplied to inner basin 402 (at about 1-5 gallons per minute for a 10 liter plating cell, for example), and therefore, the plating solution continually overflows the uppermost point ofinner basin 402 and runs intoouter basin 401. The overflow plating solution is then collected byouter basin 401 and drained therefrom for recirculation intobasin 402. As illustrated in FIG. 4, platingcell 400 is generally positioned at a tilt angle, i.e., theframe portion 403 of platingcell 400 is generally elevated on one side such that the components of platingcell 400 are tilted between about 3° and about 30°. Therefore, in order to contain an adequate depth of plating solution withininner basin 402 during plating operations, the uppermost portion ofbasin 102 may be extended upward on one side of platingdell 400, such that the uppermost point ofinner basin 402 is generally horizontal and allows for contiguous overflow of the plating solution supplied thereto around the perimeter ofbasin 402. - The
frame member 403 of platingcell 400 generally includes an annular anode base member 404 secured to framemember 403. Sinceframe member 403 is elevated on one side, the upper surface of base member 404 is generally tilted from the horizontal at an angle that corresponds to the angle offrame member 403 relative to a horizontal position. Base member 404 includes an annular or disk shaped recess formed therein, the annular recess being configured to receive a disk shapedanode member 405. Base member 404 further includes a plurality of fluid inlets/drains 409 positioned on a lower surface thereof. Each of the fluid inlets/drains 409 are generally configured to individually supply or drain a fluid to or from either the anode compartment or the cathode compartment of platingcell 400.Anode member 405 generally includes a plurality ofslots 407 formed therethrough, wherein theslots 407 are generally positioned in parallel orientation with each other across the surface of theanode 405. The parallel orientation allows for dense fluids generated at the anode surface to flow downwardly across the anode surface and into one of theslots 407. Platingcell 400 further includes amembrane support assembly 406.Membrane support assembly 406 is generally secured at an outer periphery thereof to base member 404, and includes aninterior region 408 configured to allow fluids to pass therethrough via a sequence of oppositely positioned slots and bores. The membrane support assembly may include an o-ring type seal positioned near a perimeter of the membrane, wherein the seal is configured to prevent fluids from traveling from one side of the membrane secured on themembrane support 406 to the other side of the membrane. - In operation, the plating
cell 400 of the invention provides a small volume (electrolyte volume) processing cell that may be used for copper electrochemical plating processes, for example. Platingcell 400 may be horizontally positioned or positioned in a tilted orientation, i.e., where one side of the cell is elevated vertically higher than the opposing side of the cell. If platingcell 400 is implemented in a tilted configuration, then a tilted head assembly and substrate support member may be utilized to immerse the substrate at a constant immersion angle, i.e., immerse the substrate such that the angle between the substrate and the upper surface of the electrolyte does not change during the immersion process. Further, the immersion process may include a varying immersion velocity, i.e., an increasing velocity as the substrate becomes immersed in the electrolyte solution. The combination of the constant immersion angle and the varying immersion velocity operates to eliminate air bubbles on the substrate surface. - Assuming a tilted implementation is utilized, a substrate is first immersed into a plating solution contained within
inner basin 402. Once the substrate is immersed in the plating solution, which generally contains copper sulfate, chlorine, and one or more of a plurality of organic plating additives (levelers, suppressors, accelerators, etc.) configured to control plating parameters, an electrical plating bias is applied between a seed layer on the substrate and theanode 405 positioned in a lower portion of platingcell 400. The electrical plating bias generally operates to cause metal ions in the plating solution to deposit on the cathodic substrate surface. The plating solution supplied toinner basin 402 is continually circulated throughinner basin 402 via fluid inlet/outlets 409. More particularly, the plating solution may be introduced in platingcell 400 via afluid inlet 409. The solution may travel across the lower surface of base member 404 and upward through one offluid apertures 406. The plating solution may then be introduced into the cathode chamber via a channel formed into platingcell 400 that communicates with the cathode chamber at a point abovemembrane support 406. Similarly, the plating solution may be removed from the cathode chamber via a fluid drain positioned above membrane support 106, where the fluid drain is in fluid communication with one of fluid drains 109 positioned on the lower surface of base member 404. For example, base member 404 may include first and second fluid apertures positioned on opposite sides of base member 404. The oppositely positioned fluid apertures may operate to individually introduce and drain the plating solution from the cathode chamber in a predetermined direction, which also allows for flow direction control. The flow control direction provides control over removal of light fluids at the lower membrane surface, removal of bubbles from the anode chamber, and assists in the removal of dense or heavy fluids from the anode surface via thechannels 402 formed into base 404. - Once the plating solution is introduced into the cathode chamber, the plating solution travels upward through
diffusion plate 410.Diffusion plate 410, which is generally a ceramic or other porous disk shaped member, generally operates as a fluid flow restrictor to even out the flow pattern across the surface of the substrate. Further, thediffusion plate 410 operates to resistively damp electrical variations in the electrochemically active area the anode or cation membrane surface, which is known to reduce plating uniformities. Additionally, embodiments of the invention contemplate that theceramic diffusion plate 410 may be replaced by a hydrophilic plastic member, i.e., a treated PE member, an PVDF member, a PP member, or other material that is known to be porous and provide the electrically resistive damping characteristics provided by ceramics. However, the plating solution introduced into the cathode chamber, which is generally a plating catholyte solution, i.e., a plating solution with additives, is not permitted to travel downward through the membrane (not shown) positioned on the lower surface ofmembrane support assembly 406 into the anode chamber, as the anode chamber is fluidly isolated from the cathode chamber by the membrane. The anode chamber includes separate individual fluid supply and drain sources configured to supply an anolyte solution to the anode chamber. The solution supplied to the anode chamber, which may generally be copper sulfate in a copper electrochemical plating system, circulates exclusively through the anode chamber and does not diffuse or otherwise travel into the cathode chamber, as the membrane positioned onmembrane support assembly 406 is not fluid permeable in either direction. - Additionally, the flow of the fluid solution (anolyte, i.e., a plating solution without additives, which may be referred to as a virgin solution) into the anode chamber is directionally controlled in order to maximize plating parameters. For example, anolyte may be communicated to the anode chamber via an
individual fluid inlet 409.Fluid inlet 409 is in fluid communication with a fluid channel formed into a lower portion of base member 404 and the fluid channel communicates the anolyte to apertures configured to circulate the respective fluids to the respective chambers above and below the membrane. Similarly, a catholyte solution, i.e., a solution with plating additives therein, may be separately communicated to the cathode compartment, i.e., the volume above the membrane. - Therefore, in operation, system100 may be used to provide a substrate to a
processing module 102 in a dry form, i.e., the surface of the substrate is not wet from a previous wet processing step. For example, substrates having a seed layer deposited thereon may be introduced into system 100 viacassettes 103.Robot 104 may operate to deliver the substrate having a seed layer formed thereon (a dry substrate) toprocessing module 102.Module 102 generally receives the substrate in thepreprocessing cell 201, where the substrate may be rinsed and/or cleaned in accordance with a specific processing recipe. Once the desired preprocessing steps are completed incell 201, the substrate is generally transferred to theprocessing cell 202 viarobot 203. In the processing cell the substrate may be plated, deplated, or otherwise processed. Once the substrate is processed incell 202, it is generally transferred back tocell 201 for post processing steps. Exemplary post processing steps include rinsing, cleaning, edge bead removal, drying, and/or other known semiconductor post processing steps. However, one step generally conducted incell 201 is a spin rinse dry process, as system 100 is generally configured to supply a dry substrate toprocessing module 102 and receive a dry processed substrate from processing module when the processing steps are complete. As such,FI 101 is generally maintained in a clean and dry manner and is not likely to contaminate other substrates traveling therethrough for processing inother processing modules 102. - Another advantage provided by system100 is that processing
modules 102 are removable, and more particularly, processing modules are interchangeable. Therefore, system 100 has the ability to shut down anindividual processing module 102 when a fault occurs, service or remove thefaulty processing module 102 fromFI 101, and/or replace it with anew processing module 102, without interrupting the operation of system 100. Additionally the removability ofmodules 102 allows system 100 to be scalable, as additional processing modules may be added to the interface section as needed. For example, embodiments of the invention contemplate that annealing chambers or modules, electroless chambers or modules, polishing modules or chambers, other electrolytic processing modules, and/or chemical polishing modules. - While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow
Claims (20)
1. An electroless processing system, comprising:
an interface section having a substrate transfer robot positioned thereon; and
an electroless processing module positioned in communication with the interface section, the electroless processing module comprising:
a processing enclosure;
an electroless activation cell positioned in the enclosure;
an electroless deposition cell positioned in the enclosure; and
an enclosure robot configured to transfer substrates between the activation cell and the deposition cell.
2. The electroless processing system of claim 1 , wherein the electroless activation cell and the electroless deposition cell comprise face up processing cells.
3. The electroless processing system of claim 2 , wherein the activation cell and the deposition cell each comprise:
a rotatable substrate support member configured to support a substrate in a configuration such that a production surface of the substrate is facing away from the substrate support member;
a fluid dispensing arm movably positioned to dispense a processing fluid onto the production surface of the substrate.
4. The electroless processing system of claim 3 , further comprising means for centering the substrate on the substrate support member.
5. The electroless processing system of claim 1 , further comprising at least one substrate cleaning cell positioned in communication with the interface section.
6. The electroless processing system of claim 5 , wherein the at least one substrate cleaning cell comprises at least one of a spin rinse dry cell and a substrate bevel clean cell.
7. The electroless processing system of claim 1 , wherein the electroless activation cell is configured to selectively dispense at least one of a substrate precleaning solution and an electroless activation solution onto the substrate.
8. The electroless processing system of claim 1 , wherein the electroless deposition cell is configured to selectively dispense at least one of an electroless deposition solution and a substrate post deposition cleaning solution onto the substrate.
9. The electroless processing system of claim 1 , wherein the electroless processing module is removable from the interface section.
10. The electroless processing system of claim 1 , further comprising a selectively actuatable access valve positioned in the enclosure to allow for access into a processing volume of enclosure by the substrate transfer robot.
11. An electroless processing system, comprising:
a processing enclosure positioned in communication with a processing platform;
a substrate transfer robot positioned in the enclosure;
a first fluid processing cell positioned in the enclosure, the first fluid processing cell being configured to dispense at least one of an electroless precleaning solution and an electroless activation solution onto the substrate; and
a second fluid processing cell positioned in the enclosure, the second fluid processing cell being configured to dispense at least one of an electroless deposition solution and an electroless post cleaning solution onto the substrate.
12. The electroless processing system of claim 11 , wherein the first and second fluid processing cells comprises:
a rotatable substrate support member;
a fluid dispensing arm movably positioned to dispense processing fluids onto the substrate; and
a substrate centering member positioned radially outward of the support member.
13. The electroless processing system of claim 12 , wherein the substrate support member is configured to support a substrate in an orientation such that a plating surface of the substrate is facing away from the substrate support member.
14. The electroless processing system of claim 13 , wherein the substrate support member comprises a vacuum chuck.
15. The electroless processing system of claim 13 , wherein the substrate support member has an outer diameter that is smaller than an outer diameter of the substrate being processed.
16. The electroless processing system of claim 12 , wherein the substrate centering member comprises a plurality of eccentric rotatable centering posts positioned radially around a central axis of the substrate support member.
17. The electroless processing system of claim 11 , wherein the processing enclosure is detachably positioned in communication with the processing platform.
18. The electroless processing system of claim 11 , further comprising an access valve positioned in the processing enclosure, the access valve being configured to allow a processing platform robot access into the processing enclosure.
19. An electroless processing system, comprising:
a primary substrate transfer robot positioned on a mainframe; and
at least one electroless processing enclosure positioned on the mainframe, the electroless processing enclosure comprising
a sealable enclosure defining a processing volume and having at least one selectively actuated access door;
a first fluid processing cell positioned on the processing volume and configured to apply at least one of an electroless activation solution and a cleaning solution to a substrate;
a second fluid processing cell positioned in the processing volume and configured to apply an electroless plating solution to the substrate; and
a substrate shuttle positioned between the first and second fluid processing cells in the processing volume, the shuttle being configured to transfer substrates between the first and second fluid processing cells.
20. The processing system of claim 19 , further comprising a gas delivery system in fluid communication with an interior volume of the enclosure.
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Cited By (159)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050084615A1 (en) * | 2003-10-15 | 2005-04-21 | Applied Materials, Inc. | Measurement techniques for controlling aspects of a electroless deposition process |
US20050160990A1 (en) * | 2004-01-26 | 2005-07-28 | Dmitry Lubomirsky | Apparatus for electroless deposition of metals onto semiconductor substrates |
WO2005073430A2 (en) * | 2004-01-26 | 2005-08-11 | Applied Materials, Inc. | Apparatus for electroless deposition of metals onto semiconductor substrates |
US20070111519A1 (en) * | 2003-10-15 | 2007-05-17 | Applied Materials, Inc. | Integrated electroless deposition system |
US20070292604A1 (en) * | 2005-08-31 | 2007-12-20 | Lam Research Corporation | Processes and systems for engineering a copper surface for selective metal deposition |
US20080251148A1 (en) * | 2007-04-16 | 2008-10-16 | Lam Research Corporation | Fluid Handling System for Wafer Electroless Plating and Associated Methods |
US20080254621A1 (en) * | 2007-04-16 | 2008-10-16 | Lam Research Corporation | Wafer Electroless Plating System and Associated Methods |
US20090111280A1 (en) * | 2004-02-26 | 2009-04-30 | Applied Materials, Inc. | Method for removing oxides |
US7867900B2 (en) | 2007-09-28 | 2011-01-11 | Applied Materials, Inc. | Aluminum contact integration on cobalt silicide junction |
US8679983B2 (en) | 2011-09-01 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen |
US8679982B2 (en) | 2011-08-26 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and oxygen |
US8765574B2 (en) | 2012-11-09 | 2014-07-01 | Applied Materials, Inc. | Dry etch process |
US8771539B2 (en) | 2011-02-22 | 2014-07-08 | Applied Materials, Inc. | Remotely-excited fluorine and water vapor etch |
US8801952B1 (en) | 2013-03-07 | 2014-08-12 | Applied Materials, Inc. | Conformal oxide dry etch |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
US8895449B1 (en) | 2013-05-16 | 2014-11-25 | Applied Materials, Inc. | Delicate dry clean |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
US8927390B2 (en) | 2011-09-26 | 2015-01-06 | Applied Materials, Inc. | Intrench profile |
US8951429B1 (en) | 2013-10-29 | 2015-02-10 | Applied Materials, Inc. | Tungsten oxide processing |
US8956980B1 (en) | 2013-09-16 | 2015-02-17 | Applied Materials, Inc. | Selective etch of silicon nitride |
US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
US8975152B2 (en) | 2011-11-08 | 2015-03-10 | Applied Materials, Inc. | Methods of reducing substrate dislocation during gapfill processing |
US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9023732B2 (en) | 2013-03-15 | 2015-05-05 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9034770B2 (en) | 2012-09-17 | 2015-05-19 | Applied Materials, Inc. | Differential silicon oxide etch |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US9064816B2 (en) | 2012-11-30 | 2015-06-23 | Applied Materials, Inc. | Dry-etch for selective oxidation removal |
US9111877B2 (en) | 2012-12-18 | 2015-08-18 | Applied Materials, Inc. | Non-local plasma oxide etch |
US9114438B2 (en) | 2013-05-21 | 2015-08-25 | Applied Materials, Inc. | Copper residue chamber clean |
US9117855B2 (en) | 2013-12-04 | 2015-08-25 | Applied Materials, Inc. | Polarity control for remote plasma |
US9136273B1 (en) | 2014-03-21 | 2015-09-15 | Applied Materials, Inc. | Flash gate air gap |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US9159606B1 (en) | 2014-07-31 | 2015-10-13 | Applied Materials, Inc. | Metal air gap |
US9165786B1 (en) | 2014-08-05 | 2015-10-20 | Applied Materials, Inc. | Integrated oxide and nitride recess for better channel contact in 3D architectures |
US9190293B2 (en) | 2013-12-18 | 2015-11-17 | Applied Materials, Inc. | Even tungsten etch for high aspect ratio trenches |
US9236265B2 (en) | 2013-11-04 | 2016-01-12 | Applied Materials, Inc. | Silicon germanium processing |
US9236266B2 (en) | 2011-08-01 | 2016-01-12 | Applied Materials, Inc. | Dry-etch for silicon-and-carbon-containing films |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9263278B2 (en) | 2013-12-17 | 2016-02-16 | Applied Materials, Inc. | Dopant etch selectivity control |
US9269590B2 (en) | 2014-04-07 | 2016-02-23 | Applied Materials, Inc. | Spacer formation |
US9287110B2 (en) | 2004-06-30 | 2016-03-15 | Lam Research Corporation | Method and apparatus for wafer electroless plating |
US9287095B2 (en) | 2013-12-17 | 2016-03-15 | Applied Materials, Inc. | Semiconductor system assemblies and methods of operation |
US9287134B2 (en) | 2014-01-17 | 2016-03-15 | Applied Materials, Inc. | Titanium oxide etch |
US9293568B2 (en) | 2014-01-27 | 2016-03-22 | Applied Materials, Inc. | Method of fin patterning |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9299575B2 (en) | 2014-03-17 | 2016-03-29 | Applied Materials, Inc. | Gas-phase tungsten etch |
US9299583B1 (en) | 2014-12-05 | 2016-03-29 | Applied Materials, Inc. | Aluminum oxide selective etch |
US9299538B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
US9343272B1 (en) | 2015-01-08 | 2016-05-17 | Applied Materials, Inc. | Self-aligned process |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US9355862B2 (en) | 2014-09-24 | 2016-05-31 | Applied Materials, Inc. | Fluorine-based hardmask removal |
US9355856B2 (en) | 2014-09-12 | 2016-05-31 | Applied Materials, Inc. | V trench dry etch |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9368364B2 (en) | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US9472417B2 (en) | 2013-11-12 | 2016-10-18 | Applied Materials, Inc. | Plasma-free metal etch |
US9478432B2 (en) | 2014-09-25 | 2016-10-25 | Applied Materials, Inc. | Silicon oxide selective removal |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US9847289B2 (en) | 2014-05-30 | 2017-12-19 | Applied Materials, Inc. | Protective via cap for improved interconnect performance |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US9885117B2 (en) | 2014-03-31 | 2018-02-06 | Applied Materials, Inc. | Conditioned semiconductor system parts |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10062587B2 (en) | 2012-07-18 | 2018-08-28 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10170282B2 (en) | 2013-03-08 | 2019-01-01 | Applied Materials, Inc. | Insulated semiconductor faceplate designs |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10468267B2 (en) | 2017-05-31 | 2019-11-05 | Applied Materials, Inc. | Water-free etching methods |
US10490418B2 (en) | 2014-10-14 | 2019-11-26 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10593523B2 (en) | 2014-10-14 | 2020-03-17 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US10615047B2 (en) | 2018-02-28 | 2020-04-07 | Applied Materials, Inc. | Systems and methods to form airgaps |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11239061B2 (en) | 2014-11-26 | 2022-02-01 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11594428B2 (en) | 2015-02-03 | 2023-02-28 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
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US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6699380B1 (en) * | 2002-10-18 | 2004-03-02 | Applied Materials Inc. | Modular electrochemical processing system |
US20050022909A1 (en) * | 2003-03-20 | 2005-02-03 | Xinming Wang | Substrate processing method and substrate processing apparatus |
US7654221B2 (en) * | 2003-10-06 | 2010-02-02 | Applied Materials, Inc. | Apparatus for electroless deposition of metals onto semiconductor substrates |
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US7879218B1 (en) | 2003-12-18 | 2011-02-01 | Novellus Systems, Inc. | Deposit morphology of electroplated copper |
US20080149489A1 (en) * | 2004-08-11 | 2008-06-26 | Novellus Systems, Inc. | Multistep immersion of wafer into liquid bath |
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US9070750B2 (en) | 2013-03-06 | 2015-06-30 | Novellus Systems, Inc. | Methods for reducing metal oxide surfaces to modified metal surfaces using a gaseous reducing environment |
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US9758893B2 (en) * | 2014-02-07 | 2017-09-12 | Applied Materials, Inc. | Electroplating methods for semiconductor substrates |
US9469912B2 (en) | 2014-04-21 | 2016-10-18 | Lam Research Corporation | Pretreatment method for photoresist wafer processing |
US9472377B2 (en) | 2014-10-17 | 2016-10-18 | Lam Research Corporation | Method and apparatus for characterizing metal oxide reduction |
US10443146B2 (en) | 2017-03-30 | 2019-10-15 | Lam Research Corporation | Monitoring surface oxide on seed layers during electroplating |
CN108326846B (en) * | 2017-12-19 | 2020-11-03 | 北京可以科技有限公司 | Modular robot and module unit position calculation method thereof |
US10886155B2 (en) * | 2019-01-16 | 2021-01-05 | Applied Materials, Inc. | Optical stack deposition and on-board metrology |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5258223A (en) * | 1991-01-21 | 1993-11-02 | Fuji Photo Film Co., Ltd. | Magnetic recording medium |
US5733420A (en) * | 1992-11-10 | 1998-03-31 | Casio Computer Co., Ltd. | Anodizing apparatus and an anodizing method |
US5779799A (en) * | 1996-06-21 | 1998-07-14 | Micron Technology, Inc. | Substrate coating apparatus |
US5934856A (en) * | 1994-05-23 | 1999-08-10 | Tokyo Electron Limited | Multi-chamber treatment system |
US6071055A (en) * | 1997-09-30 | 2000-06-06 | Applied Materials, Inc. | Front end vacuum processing environment |
US6203582B1 (en) * | 1996-07-15 | 2001-03-20 | Semitool, Inc. | Modular semiconductor workpiece processing tool |
US6254760B1 (en) * | 1999-03-05 | 2001-07-03 | Applied Materials, Inc. | Electro-chemical deposition system and method |
US6258220B1 (en) * | 1998-11-30 | 2001-07-10 | Applied Materials, Inc. | Electro-chemical deposition system |
US6267853B1 (en) * | 1999-07-09 | 2001-07-31 | Applied Materials, Inc. | Electro-chemical deposition system |
US6338874B1 (en) * | 1993-01-28 | 2002-01-15 | Applied Materials, Inc. | Method for multilayer CVD processing in a single chamber |
US20020036065A1 (en) * | 2000-08-22 | 2002-03-28 | Takayuki Yamagishi | Semiconductor processing module and apparatus |
US20030045098A1 (en) * | 2001-08-31 | 2003-03-06 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
US6699380B1 (en) * | 2002-10-18 | 2004-03-02 | Applied Materials Inc. | Modular electrochemical processing system |
US6716330B2 (en) * | 2000-10-26 | 2004-04-06 | Ebara Corporation | Electroless plating apparatus and method |
US6921466B2 (en) * | 2000-04-27 | 2005-07-26 | Ebara Corporation | Revolution member supporting apparatus and semiconductor substrate processing apparatus |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5842794A (en) | 1981-09-08 | 1983-03-12 | Nippon Kokan Kk <Nkk> | Pretreatment for electroplating in continuous electroplating line |
US6258223B1 (en) | 1999-07-09 | 2001-07-10 | Applied Materials, Inc. | In-situ electroless copper seed layer enhancement in an electroplating system |
-
2002
- 2002-10-18 US US10/274,721 patent/US6699380B1/en not_active Expired - Fee Related
-
2004
- 2004-02-03 US US10/770,737 patent/US20040154535A1/en not_active Abandoned
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5258223A (en) * | 1991-01-21 | 1993-11-02 | Fuji Photo Film Co., Ltd. | Magnetic recording medium |
US5733420A (en) * | 1992-11-10 | 1998-03-31 | Casio Computer Co., Ltd. | Anodizing apparatus and an anodizing method |
US6338874B1 (en) * | 1993-01-28 | 2002-01-15 | Applied Materials, Inc. | Method for multilayer CVD processing in a single chamber |
US5934856A (en) * | 1994-05-23 | 1999-08-10 | Tokyo Electron Limited | Multi-chamber treatment system |
US5779799A (en) * | 1996-06-21 | 1998-07-14 | Micron Technology, Inc. | Substrate coating apparatus |
US6203582B1 (en) * | 1996-07-15 | 2001-03-20 | Semitool, Inc. | Modular semiconductor workpiece processing tool |
US6071055A (en) * | 1997-09-30 | 2000-06-06 | Applied Materials, Inc. | Front end vacuum processing environment |
US6635157B2 (en) * | 1998-11-30 | 2003-10-21 | Applied Materials, Inc. | Electro-chemical deposition system |
US6258220B1 (en) * | 1998-11-30 | 2001-07-10 | Applied Materials, Inc. | Electro-chemical deposition system |
US6254760B1 (en) * | 1999-03-05 | 2001-07-03 | Applied Materials, Inc. | Electro-chemical deposition system and method |
US6267853B1 (en) * | 1999-07-09 | 2001-07-31 | Applied Materials, Inc. | Electro-chemical deposition system |
US6921466B2 (en) * | 2000-04-27 | 2005-07-26 | Ebara Corporation | Revolution member supporting apparatus and semiconductor substrate processing apparatus |
US20020036065A1 (en) * | 2000-08-22 | 2002-03-28 | Takayuki Yamagishi | Semiconductor processing module and apparatus |
US6716330B2 (en) * | 2000-10-26 | 2004-04-06 | Ebara Corporation | Electroless plating apparatus and method |
US20030045098A1 (en) * | 2001-08-31 | 2003-03-06 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
US6699380B1 (en) * | 2002-10-18 | 2004-03-02 | Applied Materials Inc. | Modular electrochemical processing system |
Cited By (239)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7341633B2 (en) | 2003-10-15 | 2008-03-11 | Applied Materials, Inc. | Apparatus for electroless deposition |
US20070111519A1 (en) * | 2003-10-15 | 2007-05-17 | Applied Materials, Inc. | Integrated electroless deposition system |
US20050084615A1 (en) * | 2003-10-15 | 2005-04-21 | Applied Materials, Inc. | Measurement techniques for controlling aspects of a electroless deposition process |
US7465358B2 (en) | 2003-10-15 | 2008-12-16 | Applied Materials, Inc. | Measurement techniques for controlling aspects of a electroless deposition process |
WO2005038094A2 (en) * | 2003-10-15 | 2005-04-28 | Applied Materials, Inc. | Apparatus for electroless deposition |
WO2005038094A3 (en) * | 2003-10-15 | 2005-08-25 | Applied Materials Inc | Apparatus for electroless deposition |
US20050081785A1 (en) * | 2003-10-15 | 2005-04-21 | Applied Materials, Inc. | Apparatus for electroless deposition |
WO2005073430A3 (en) * | 2004-01-26 | 2006-06-08 | Applied Materials Inc | Apparatus for electroless deposition of metals onto semiconductor substrates |
WO2005073430A2 (en) * | 2004-01-26 | 2005-08-11 | Applied Materials, Inc. | Apparatus for electroless deposition of metals onto semiconductor substrates |
US7323058B2 (en) | 2004-01-26 | 2008-01-29 | Applied Materials, Inc. | Apparatus for electroless deposition of metals onto semiconductor substrates |
US20050160990A1 (en) * | 2004-01-26 | 2005-07-28 | Dmitry Lubomirsky | Apparatus for electroless deposition of metals onto semiconductor substrates |
US20090111280A1 (en) * | 2004-02-26 | 2009-04-30 | Applied Materials, Inc. | Method for removing oxides |
US8846163B2 (en) | 2004-02-26 | 2014-09-30 | Applied Materials, Inc. | Method for removing oxides |
US9287110B2 (en) | 2004-06-30 | 2016-03-15 | Lam Research Corporation | Method and apparatus for wafer electroless plating |
US20070292604A1 (en) * | 2005-08-31 | 2007-12-20 | Lam Research Corporation | Processes and systems for engineering a copper surface for selective metal deposition |
US8771804B2 (en) * | 2005-08-31 | 2014-07-08 | Lam Research Corporation | Processes and systems for engineering a copper surface for selective metal deposition |
US8844461B2 (en) | 2007-04-16 | 2014-09-30 | Lam Research Corporation | Fluid handling system for wafer electroless plating and associated methods |
US20080254621A1 (en) * | 2007-04-16 | 2008-10-16 | Lam Research Corporation | Wafer Electroless Plating System and Associated Methods |
US8069813B2 (en) * | 2007-04-16 | 2011-12-06 | Lam Research Corporation | Wafer electroless plating system and associated methods |
TWI584356B (en) * | 2007-04-16 | 2017-05-21 | 蘭姆研究公司 | Wafer electroless plating system and associated methods |
US20080251148A1 (en) * | 2007-04-16 | 2008-10-16 | Lam Research Corporation | Fluid Handling System for Wafer Electroless Plating and Associated Methods |
US7867900B2 (en) | 2007-09-28 | 2011-01-11 | Applied Materials, Inc. | Aluminum contact integration on cobalt silicide junction |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
US9754800B2 (en) | 2010-05-27 | 2017-09-05 | Applied Materials, Inc. | Selective etch for silicon films |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8771539B2 (en) | 2011-02-22 | 2014-07-08 | Applied Materials, Inc. | Remotely-excited fluorine and water vapor etch |
US10062578B2 (en) | 2011-03-14 | 2018-08-28 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9842744B2 (en) | 2011-03-14 | 2017-12-12 | Applied Materials, Inc. | Methods for etch of SiN films |
US9236266B2 (en) | 2011-08-01 | 2016-01-12 | Applied Materials, Inc. | Dry-etch for silicon-and-carbon-containing films |
US8679982B2 (en) | 2011-08-26 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and oxygen |
US8679983B2 (en) | 2011-09-01 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen |
US8927390B2 (en) | 2011-09-26 | 2015-01-06 | Applied Materials, Inc. | Intrench profile |
US9012302B2 (en) | 2011-09-26 | 2015-04-21 | Applied Materials, Inc. | Intrench profile |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
US9418858B2 (en) | 2011-10-07 | 2016-08-16 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
US8975152B2 (en) | 2011-11-08 | 2015-03-10 | Applied Materials, Inc. | Methods of reducing substrate dislocation during gapfill processing |
US10062587B2 (en) | 2012-07-18 | 2018-08-28 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US10032606B2 (en) | 2012-08-02 | 2018-07-24 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9034770B2 (en) | 2012-09-17 | 2015-05-19 | Applied Materials, Inc. | Differential silicon oxide etch |
US9887096B2 (en) | 2012-09-17 | 2018-02-06 | Applied Materials, Inc. | Differential silicon oxide etch |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9437451B2 (en) | 2012-09-18 | 2016-09-06 | Applied Materials, Inc. | Radical-component oxide etch |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9978564B2 (en) | 2012-09-21 | 2018-05-22 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US11264213B2 (en) | 2012-09-21 | 2022-03-01 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US10354843B2 (en) | 2012-09-21 | 2019-07-16 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US8765574B2 (en) | 2012-11-09 | 2014-07-01 | Applied Materials, Inc. | Dry etch process |
US9384997B2 (en) | 2012-11-20 | 2016-07-05 | Applied Materials, Inc. | Dry-etch selectivity |
US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US9412608B2 (en) | 2012-11-30 | 2016-08-09 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US9064816B2 (en) | 2012-11-30 | 2015-06-23 | Applied Materials, Inc. | Dry-etch for selective oxidation removal |
US9355863B2 (en) | 2012-12-18 | 2016-05-31 | Applied Materials, Inc. | Non-local plasma oxide etch |
US9111877B2 (en) | 2012-12-18 | 2015-08-18 | Applied Materials, Inc. | Non-local plasma oxide etch |
US9449845B2 (en) | 2012-12-21 | 2016-09-20 | Applied Materials, Inc. | Selective titanium nitride etching |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US11024486B2 (en) | 2013-02-08 | 2021-06-01 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US10424485B2 (en) | 2013-03-01 | 2019-09-24 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US9607856B2 (en) | 2013-03-05 | 2017-03-28 | Applied Materials, Inc. | Selective titanium nitride removal |
US9093390B2 (en) | 2013-03-07 | 2015-07-28 | Applied Materials, Inc. | Conformal oxide dry etch |
US8801952B1 (en) | 2013-03-07 | 2014-08-12 | Applied Materials, Inc. | Conformal oxide dry etch |
US10170282B2 (en) | 2013-03-08 | 2019-01-01 | Applied Materials, Inc. | Insulated semiconductor faceplate designs |
US9023732B2 (en) | 2013-03-15 | 2015-05-05 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9991134B2 (en) | 2013-03-15 | 2018-06-05 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9153442B2 (en) | 2013-03-15 | 2015-10-06 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9093371B2 (en) | 2013-03-15 | 2015-07-28 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9704723B2 (en) | 2013-03-15 | 2017-07-11 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9184055B2 (en) | 2013-03-15 | 2015-11-10 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9659792B2 (en) | 2013-03-15 | 2017-05-23 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9449850B2 (en) | 2013-03-15 | 2016-09-20 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US8895449B1 (en) | 2013-05-16 | 2014-11-25 | Applied Materials, Inc. | Delicate dry clean |
US9114438B2 (en) | 2013-05-21 | 2015-08-25 | Applied Materials, Inc. | Copper residue chamber clean |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US8956980B1 (en) | 2013-09-16 | 2015-02-17 | Applied Materials, Inc. | Selective etch of silicon nitride |
US9209012B2 (en) | 2013-09-16 | 2015-12-08 | Applied Materials, Inc. | Selective etch of silicon nitride |
US8951429B1 (en) | 2013-10-29 | 2015-02-10 | Applied Materials, Inc. | Tungsten oxide processing |
US9236265B2 (en) | 2013-11-04 | 2016-01-12 | Applied Materials, Inc. | Silicon germanium processing |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9711366B2 (en) | 2013-11-12 | 2017-07-18 | Applied Materials, Inc. | Selective etch for metal-containing materials |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US9472417B2 (en) | 2013-11-12 | 2016-10-18 | Applied Materials, Inc. | Plasma-free metal etch |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9472412B2 (en) | 2013-12-02 | 2016-10-18 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9117855B2 (en) | 2013-12-04 | 2015-08-25 | Applied Materials, Inc. | Polarity control for remote plasma |
US9263278B2 (en) | 2013-12-17 | 2016-02-16 | Applied Materials, Inc. | Dopant etch selectivity control |
US9287095B2 (en) | 2013-12-17 | 2016-03-15 | Applied Materials, Inc. | Semiconductor system assemblies and methods of operation |
US9190293B2 (en) | 2013-12-18 | 2015-11-17 | Applied Materials, Inc. | Even tungsten etch for high aspect ratio trenches |
US9287134B2 (en) | 2014-01-17 | 2016-03-15 | Applied Materials, Inc. | Titanium oxide etch |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US9293568B2 (en) | 2014-01-27 | 2016-03-22 | Applied Materials, Inc. | Method of fin patterning |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9299575B2 (en) | 2014-03-17 | 2016-03-29 | Applied Materials, Inc. | Gas-phase tungsten etch |
US9564296B2 (en) | 2014-03-20 | 2017-02-07 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9299538B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9837249B2 (en) | 2014-03-20 | 2017-12-05 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9136273B1 (en) | 2014-03-21 | 2015-09-15 | Applied Materials, Inc. | Flash gate air gap |
US9885117B2 (en) | 2014-03-31 | 2018-02-06 | Applied Materials, Inc. | Conditioned semiconductor system parts |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9269590B2 (en) | 2014-04-07 | 2016-02-23 | Applied Materials, Inc. | Spacer formation |
US10465294B2 (en) | 2014-05-28 | 2019-11-05 | Applied Materials, Inc. | Oxide and metal removal |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9847289B2 (en) | 2014-05-30 | 2017-12-19 | Applied Materials, Inc. | Protective via cap for improved interconnect performance |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US9773695B2 (en) | 2014-07-31 | 2017-09-26 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9159606B1 (en) | 2014-07-31 | 2015-10-13 | Applied Materials, Inc. | Metal air gap |
US9165786B1 (en) | 2014-08-05 | 2015-10-20 | Applied Materials, Inc. | Integrated oxide and nitride recess for better channel contact in 3D architectures |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9355856B2 (en) | 2014-09-12 | 2016-05-31 | Applied Materials, Inc. | V trench dry etch |
US9368364B2 (en) | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US9355862B2 (en) | 2014-09-24 | 2016-05-31 | Applied Materials, Inc. | Fluorine-based hardmask removal |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9837284B2 (en) | 2014-09-25 | 2017-12-05 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9478432B2 (en) | 2014-09-25 | 2016-10-25 | Applied Materials, Inc. | Silicon oxide selective removal |
US10796922B2 (en) | 2014-10-14 | 2020-10-06 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US10593523B2 (en) | 2014-10-14 | 2020-03-17 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US10707061B2 (en) | 2014-10-14 | 2020-07-07 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US10490418B2 (en) | 2014-10-14 | 2019-11-26 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US11239061B2 (en) | 2014-11-26 | 2022-02-01 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US9299583B1 (en) | 2014-12-05 | 2016-03-29 | Applied Materials, Inc. | Aluminum oxide selective etch |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US9343272B1 (en) | 2015-01-08 | 2016-05-17 | Applied Materials, Inc. | Self-aligned process |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US10468285B2 (en) | 2015-02-03 | 2019-11-05 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US11594428B2 (en) | 2015-02-03 | 2023-02-28 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US10147620B2 (en) | 2015-08-06 | 2018-12-04 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US11158527B2 (en) | 2015-08-06 | 2021-10-26 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10468276B2 (en) | 2015-08-06 | 2019-11-05 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10607867B2 (en) | 2015-08-06 | 2020-03-31 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US10424463B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10424464B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US11476093B2 (en) | 2015-08-27 | 2022-10-18 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US11735441B2 (en) | 2016-05-19 | 2023-08-22 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US11049698B2 (en) | 2016-10-04 | 2021-06-29 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10224180B2 (en) | 2016-10-04 | 2019-03-05 | Applied Materials, Inc. | Chamber with flow-through source |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10541113B2 (en) | 2016-10-04 | 2020-01-21 | Applied Materials, Inc. | Chamber with flow-through source |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US10319603B2 (en) | 2016-10-07 | 2019-06-11 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US10770346B2 (en) | 2016-11-11 | 2020-09-08 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10186428B2 (en) | 2016-11-11 | 2019-01-22 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10600639B2 (en) | 2016-11-14 | 2020-03-24 | Applied Materials, Inc. | SiN spacer profile patterning |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10903052B2 (en) | 2017-02-03 | 2021-01-26 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10529737B2 (en) | 2017-02-08 | 2020-01-07 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10325923B2 (en) | 2017-02-08 | 2019-06-18 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11915950B2 (en) | 2017-05-17 | 2024-02-27 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11361939B2 (en) | 2017-05-17 | 2022-06-14 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10468267B2 (en) | 2017-05-31 | 2019-11-05 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10593553B2 (en) | 2017-08-04 | 2020-03-17 | Applied Materials, Inc. | Germanium etching systems and methods |
US11101136B2 (en) | 2017-08-07 | 2021-08-24 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10861676B2 (en) | 2018-01-08 | 2020-12-08 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10699921B2 (en) | 2018-02-15 | 2020-06-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10615047B2 (en) | 2018-02-28 | 2020-04-07 | Applied Materials, Inc. | Systems and methods to form airgaps |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US11004689B2 (en) | 2018-03-12 | 2021-05-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
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