TWI766580B - A semiconductor device - Google Patents

Abstract

A semiconductor device comprises a substrate having a first surface; a semiconductor unit on the first surface; and a adhesion structure between the first surface and the semiconductor unit and directly contacting the semiconductor unit and the substrate; wherein the adhesion structure comprises an adhesion layer and a sacrificing layer. and the materials of the adhesion layer and the sacrificing layer are different.

Description

a semiconductor device

The present invention relates to a method of manufacturing an optoelectronic semiconductor element.

With the rapid development of science and technology, optoelectronic semiconductor components have made great contributions to the transmission of information and the conversion of energy. Take the application of the system as an example, such as optical fiber communication, optical storage and military systems, etc., optoelectronic semiconductor components can all play a role. Distinguished by the way of energy conversion, optoelectronic semiconductor components can generally be divided into three categories: convert electrical energy into light emission, such as light-emitting diodes and laser diodes; convert light signals into electrical signals, such as light Detector; converts the radiant energy of light into electricity, such as a solar cell.

Among optoelectronic semiconductor devices, the growth substrate plays a very important role. The semiconductor epitaxial structures necessary for the formation of optoelectronic semiconductor devices are grown on and supported by the substrate. Therefore, choosing a suitable growth substrate often becomes an important factor in determining the growth quality of components in optoelectronic semiconductor devices.

However, sometimes a good component growth substrate is not necessarily a good component carrier substrate. Taking light emitting diodes as an example, in the conventional red light device process, in order to improve the growth quality of the device, a gallium arsenide (GaAs) substrate with a lattice constant close to the semiconductor epitaxial structure but opaque is selected. as a growth substrate. However, for the light-emitting diode device whose operation purpose is to emit light, the opaque growth substrate will cause the luminous efficiency of the device to decrease during the operation.

In order to meet the different requirements of optoelectronic semiconductor components for growth substrates and carrier substrates, the transfer technology of substrates is developed accordingly. That is, the semiconductor epitaxial structure is grown on the growth substrate first, and then the grown semiconductor epitaxial structure is transferred to the carrier substrate to facilitate subsequent device operations. After the semiconductor epitaxial structure is combined with the carrier substrate, the removal of the original growth substrate becomes one of the keys to the transfer technology.

The removal method of the growth substrate mainly includes etching and dissolving the original growth substrate with an etchant, cutting and grinding it physically, or generating a sacrificial layer between the growth substrate and the semiconductor epitaxial structure in advance, and then removing the sacrificial layer by etching. Separate the growth substrate from the semiconductor in a way. However, whether the substrate is dissolved by the etching solution or the substrate is removed by physical cutting, it is a kind of damage to the original growth substrate. Growth substrates cannot be reused. In modern times, which emphasize environmental protection and energy saving, it is undoubtedly a waste of materials. However, if a sacrificial layer structure is used for separation, for optoelectronic semiconductor devices, how to effectively perform selective transfer is one of the current research directions.

A semiconductor device, comprising a substrate with a first surface; a semiconductor element located on the first surface; and a bonding structure located between the first surface and the semiconductor element, in direct contact with the semiconductor element and the substrate; wherein , the bonding structure includes a bonding layer and a sacrificial layer, and the material of the bonding layer and the sacrificial layer are different.

101: Bonding the substrate

3011: Surface

1011: Surface

3012: Surface

1012: Surface

302: Conversion unit

102: Growth substrate

303: second semiconductor layer

1022: Surface

304: Semiconductor layer

103: Capture Components

3031: Surface

1031: Support Structure

31: The first semiconductor epitaxial stack

1032: Flexible Substrate

311: Surface

110: Hole

32: Second semiconductor epitaxial stack

1101: Wall

4: Adhesive medium

120: Hole

5: Support structure

2: Adhesive structure

601: Sacrificial Layer

202: Bonding layer

7: Laser light

201: Sacrificial Layer

t: thickness

3: Semiconductor epitaxial stack

w: interval width

301: first semiconductor layer

303s: First lower surface

304s: Second lower surface

Figures 1A to 1I are schematic diagrams of the corresponding structures in each step of the manufacturing method according to the first embodiment of the present invention; Figures 2A to 2H are respectively the schematic diagrams of the manufacturing method according to the second embodiment of the present invention in each step. Schematic diagrams corresponding to the steps; Figures 3A to 3H are schematic diagrams of the corresponding structures in each step of the process method according to the third embodiment of the present invention; Figures 4A to 4C are the schematic diagrams according to the fourth embodiment of the present invention. Figures 5A to 5G are schematic views of the structure according to the fifth embodiment of the present invention; Figures 6A to 6H are schematic views of the structure according to the sixth embodiment of the present invention; Figures 7A to 7F are schematic views of the structure according to the sixth embodiment of the present invention. Schematic diagram of the structure of the seventh embodiment of the present invention; Figures 8A to 8F are schematic diagrams of the corresponding structure of each step of the manufacturing method according to the eighth embodiment of the present invention; Figures 9A to 9I are respectively according to the present invention 10A to 10C are schematic diagrams of corresponding structures of each step of the manufacturing method according to the tenth embodiment of the present invention, respectively; FIGS. 11A to 11B The figures are schematic diagrams of corresponding structures of each step of a manufacturing method according to an embodiment of the present invention.

first embodiment

FIG. 1A to FIG. 1I are schematic diagrams of corresponding structures in each step of the manufacturing method according to the first embodiment of the present invention, respectively. Please refer to Figure 1A and Figure 1B, where Figure 1A is Figure 1B Sectional view of dashed line AA'. According to the optoelectronic semiconductor device manufacturing process disclosed in the present invention, an adhesive substrate 101 having a surface 1011 is provided, and an adhesive structure 2 is formed on the surface 1011 , and the adhesive structure 2 has a thickness t. In this embodiment, the thickness t ranges between between 1 μm and 10 μm, preferably between 2 μm and 6 μm. The adhesive structure 2 includes an adhesive layer 202 and a sacrificial layer 201. The adhesive layer 202 and the sacrificial layer 201 are juxtaposed on the surface 1011 and connected to the surface 1011. As shown in FIG. 1B, the top view of the adhesive structure 2, the adhesive layer 202 and the The sacrificial layers 201 each have a specific shape.

The material of the bonding substrate 101 includes an electrically insulating substrate or a conductive substrate, and the material of the electrically insulating substrate includes sapphire (Sapphire), diamond (Diamond), glass (Glass), quartz (Quartz), acrylic (Acryl), zinc oxide (ZnO) ), aluminum nitride (AlN), lithium aluminum oxide (LiAlO2), or ceramic substrates, etc.; materials for conductive substrates include silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), zinc oxide (ZnO), One or a combination of Gallium Nitride (GaN), Aluminum Nitride (AlN) or metallic materials. In this embodiment, the material of the adhesive layer 202 is different from that of the sacrificial layer 201. The material of the adhesive layer 202 includes benzocyclobutene (BCB); the material of the sacrificial layer 201 includes organic materials, such as ultraviolet (UV) dissociative adhesive, Contains Acrylic acid, Unsaturated polyester, Epoxy, Oxetane, Vinyl ether, etc.; Thermoplastics, including Nylon ), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS), polychlorinated Ethylene (PVC), etc.; or inorganic materials, such as metals including titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al), germanium (Ge) or combinations thereof, oxides including SiOx , or the nitride contains SiNx, etc.

Next, as shown in FIG. 1C , a growth substrate 102 is provided, and a semiconductor epitaxial stack 3 grown in an epitaxial manner is provided on the growth substrate 102 , and then the growth substrate 102 and the semiconductor epitaxial stack 3 are formed by the adhesive structure 2 . , which is bonded to the surface 1011 by heating and pressing, and bonded to the bonding substrate 101 , wherein the bonding layer 202 and the sacrificial layer 201 are both connected to the semiconductor epitaxial stack 3 . Since the material of the adhesive layer 202 is different from that of the sacrificial layer 201 , it is used to cause adhesion between the semiconductor epitaxial stack 3 and the adhesive layer 202 . The force is different from the adhesive force between the semiconductor epitaxial stack 3 and the sacrificial layer 201. In this embodiment, the adhesive force between the semiconductor epitaxial stack 3 and the adhesive layer 202 is greater than that between the semiconductor epitaxial stack 3 and the sacrificial layer. Adhesion between 201.

The semiconductor epitaxial stack 3 includes at least a first semiconductor layer 301 having a first conductivity type, a conversion unit 302 and a second semiconductor layer 303 having a second conductivity type, and are sequentially formed on the growth substrate 102 . The first semiconductor layer 301 and the second semiconductor layer 303 may be two single-layer structures or two multi-layer structures (a multi-layer structure refers to two or more layers). The first semiconductor layer 301 and the second semiconductor layer 303 have different conductivity types, electrical properties, polarities or elements depending on doping to provide electrons or holes. When the first semiconductor layer 301 is a p-type semiconductor, the second semiconductor layer 303 can be an n-type semiconductor with different electrical properties. On the contrary, when the first semiconductor layer 301 is an n-type semiconductor, the second semiconductor layer 303 can be a different electrical conductivity. a p-type semiconductor. The conversion unit 302 is formed between the first semiconductor layer 301 and the second semiconductor layer 303, and the conversion unit 302 converts light energy and electric energy into each other or causes conversion. The semiconductor epitaxial stack 3 can be further processed and applied to a semiconductor device, device, product, or circuit to perform or cause the mutual conversion of light energy and electrical energy. Specifically, the semiconductor epitaxial stack 3 can be further processed into one of a light emitting diode (LED), a laser diode (LD), a solar cell or a liquid crystal display. Taking the light emitting diode as an example, the wavelength of the emitted light can be adjusted by changing the physical and chemical composition of one or more layers in the semiconductor epitaxial stack 3 . Commonly used materials are aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, zinc oxide series (zinc oxide, ZnO). The conversion unit 302 can be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), a multi-quantum well (MWQ) ). Specifically, the conversion unit 302 can be a neutral, p-type or n-type semiconductor. When a current is applied through the semiconductor epitaxial stack 3, the conversion unit 302 emits light. When the conversion unit 302 is based on aluminum indium gallium phosphide (AlGaInP) When the material is used, it will emit amber light of red, orange and yellow light; when it is based on aluminum gallium indium nitride (AlGaInN), it will emit blue or green light.

Next, as shown in FIG. 1D , the growth substrate 102 is separated from the semiconductor epitaxial stack 3 and a surface 3011 of the semiconductor epitaxial stack 3 is exposed. The method for separating the growth substrate 102 includes using an illumination method, using laser light to penetrate the growth substrate 102 to irradiate the interface between the growth substrate 102 and the semiconductor epitaxial stack 3 to achieve the purpose of separating the semiconductor epitaxial stack 3 and the growth substrate 102 . In addition, wet etching can also be used to directly remove the growth substrate 102 , or remove the interface layer (not shown) between the growth substrate 102 and the semiconductor epitaxial stack 3 , thereby separating the growth substrate 102 and the semiconductor epitaxial stack 3 3. Besides, the interface layer (not shown) between the growth substrate 102 and the semiconductor epitaxial stack 3 can also be directly removed by vapor etching at high temperature, so as to achieve the purpose of separating the growth substrate 102 and the semiconductor epitaxial stack 3 .

As shown in FIG. 1E , a patterned adhesive medium 4 is formed on the surface 3011 of the semiconductor epitaxial stack 3 corresponding to the sacrificial layer 201 , wherein the method of forming the patterned adhesive medium 4 includes first forming a whole layer of the adhesive medium 4 On the surface 3011, a patterned adhesive medium 4 is then formed by a yellow light lithography process or a patterned etching method. The yellow light lithography process and the patterned etching are generally known semiconductor manufacturing processes. The material of the adhesive medium 4 includes organic materials, such as acrylic acid, unsaturated polyester epoxy resin (Unsaturated polyester), epoxy resin (Epoxy), oxetane (Oxetane), vinyl ether (Vinyl ether) , nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS) ), polyvinyl chloride (PVC), benzocyclobutene (BCB), etc.; or inorganic materials, such as metals including titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al) , germanium (Ge), copper (Cu) or combinations thereof, oxides including indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide , zinc oxide (ZnO), silicon oxide (SiOx), or nitrides including silicon nitride (SiNx) and the like.

Continuing as shown in FIG. 1F, the semiconductor epitaxial stack 3 and the adhesive structure 2 are patterned and the surface 1011 is exposed to form a plurality of semiconductor epitaxial stacks separated from each other, wherein a plurality of semiconductor epitaxial stacks The layers include at least one first semiconductor epitaxial stack 31 and at least one second semiconductor epitaxial stack 32, each first semiconductor epitaxial stack 31 having an adhesive medium 4, and each second semiconductor epitaxial stack 32 There is no adhesive medium 4 on the surface 3011 of the layer 32 . The method of patterning the semiconductor epitaxial stack 3 and the adhesive structure 2 includes dry etching or wet etching. In this embodiment, a dry etching process is used to make the first semiconductor epitaxial stack 31 and the second semiconductor epitaxial stack 32 The interval width w between them is as small as possible to avoid waste caused by etching too much semiconductor epitaxial stack 3 . The interval width w in this embodiment is between 1 μm and 10 μm, preferably 5 μm.

Continuing as shown in FIG. 1G , a capturing element 103 is provided to adhere to the adhesive medium 4 by heating, pressing or using the viscosity of the capturing element 103 itself. The extraction element 103 includes a conductive material, such as a conductive substrate or a printed circuit board, wherein the material of the conductive substrate includes silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), zinc oxide (ZnO), gallium nitride ( GaN), Aluminum Nitride (AlN), or one or a combination of metallic materials; printed circuit boards including single-sided, double-sided, multilayer, or flexible circuit boards; or non-conductive materials such as those containing Sapphire (Sapphire), Diamond (Diamond), Glass (Glass), Quartz (Quartz), Acrylic (Acryl), Zinc Oxide (ZnO), Aluminum Nitride (AlN), Lithium Aluminum Oxide (LiAlO2), Ceramic Substrate Or expanded polystyrene (EPS) tape, etc., wherein when the capturing element 103 is formed with the expanded polystyrene (EPS) tape, a rigid substrate can be provided for bonding with the expanded polystyrene (EPS) tape for bonding The expanded polystyrene (EPS) tape is supported to prevent the expanded polystyrene (EPS) tape from sticking to the surface 3011 of the second semiconductor epitaxial stack 32 . In another embodiment, as shown in FIG. 11A , the capturing element 103 may further include a flexible substrate 1032 and a supporting structure 1031 , wherein the material of the flexible substrate 1032 includes polyester resin (PET), polynaphthalene Polyethylene naphthalate (PEN) or polyimide (polyimide; PI), the material of the support structure includes sapphire (Sapphire), diamond (Diamond), glass (Glass), quartz (Quartz) or acrylic A hard substrate such as Acryl is used to support the flexible substrate 1032 .

In another embodiment, the patterned adhesive medium 4 can be formed on the capture element 103 first, and the adhesive medium 4 can be aligned with the first semiconductor epitaxial layer 31 by using the alignment bonding technique. The adhesive medium 4 is bonded to the first semiconductor epitaxial stack 31 in a warm and pressurized manner.

Continuing as shown in FIG. 1H, if the adhesive force between the sacrificial layer 201 and the first semiconductor epitaxial stack 31 is smaller than the adhesive force between the adhesive medium 4 and the first semiconductor epitaxial stack 31, it can be directly applied in the opposite direction. The power is used to extract the element 103 and the bonding substrate 101 to separate the first semiconductor epitaxial layer 31 from the sacrificial layer 201 without damaging the structure of the first semiconductor epitaxial layer 31. For example, when the material of the sacrificial layer 201 is Ultraviolet (UV) dissociation materials include Acrylic acid, Unsaturated polyester, Epoxy, Oxetane, Vinyl ether, etc., Using ultraviolet light (UV) to irradiate the sacrificial layer 201 can reduce or disappear the adhesive force of the sacrificial layer 201, and then apply force in opposite directions to the extraction element 103 and the bonding substrate 101 respectively, so that the first semiconductor epitaxial stack 31 and the The sacrificial layer 201 is separated; or, when the material of the sacrificial layer 201 is thermoplastic plastic including nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate Ester (PC), acrylonitrile-butadiene-styrene (ABS), polyvinyl chloride (PVC), etc., heating the sacrificial layer 201 can reduce or disappear the adhesion between the sacrificial layers 201, and then apply the opposite directions respectively. The force is used to extract the element 103 and the bonding substrate 101, so that the first semiconductor epitaxial stack 31 is separated from the sacrificial layer 201; or when the bonding medium 4 is made of a material with high adhesion such as benzocyclobutene (BCB) When the material of the sacrificial layer 201 is made of a material with low adhesive force, the sacrificial layer 201 does not need to be modified by light irradiation or heating, and the force in the opposite direction is directly applied to the capture element 103 and the bonding substrate. 101, so that the first semiconductor epitaxial stack 31 is separated from the sacrificial layer 201, wherein the material with lower adhesion includes metal materials, such as titanium (Ti), aluminum (Al), titanium-tungsten alloy (TiW), etc., oxides, For example, silicon oxide (SiOx), or nitride, such as silicon nitride (SiNx).

In addition, as shown in FIG. 1I, when the material of the sacrificial layer 201 is a metal material, such as titanium (Ti), aluminum (Al), titanium tungsten (TiW), silver (Ag), etc., or a material containing silicon, such as oxide Silicon (SiOx), Nitrogen The sacrificial layer 201 can be removed by wet etching or vapor etching for materials such as silicide (SiNx) or polysilicon (poly-Si), and then the force in the opposite direction is applied to the extraction element 103 and the bonding substrate 101 respectively, so that the The first semiconductor epitaxial stack 31 is separated from the sacrificial layer 201. In this embodiment, the etchant used for wet etching includes hydrofluoric acid, and the chemical material used for vapor etching includes hydrogen fluoride (HF) vapor.

In another embodiment, as the aforementioned capture element 103 includes a flexible substrate 1032 and a support structure 1031 , after the first semiconductor epitaxial stack 31 is separated from the sacrificial layer 201 , as shown in FIG. 11B , the The flexible substrate 1032 is separated from the support structure 1031, and is further fabricated into a flexible display.

Second Embodiment

FIG. 2A to FIG. 2H are schematic diagrams of corresponding structures in each step of the manufacturing method according to the second embodiment of the present invention, respectively. As shown in FIG. 2A , the difference between this embodiment and the aforementioned first embodiment lies in the structure of the adhesive structure 2 . In this embodiment, the sacrificial layer 201 is located between the surface 1011 of the bonding substrate 101 and the bonding layer 202 . As shown in FIG. 2B to FIG. 2H, the subsequent process is the same as that of the aforementioned first implementation, wherein, on the surface 311 of each first semiconductor epitaxial stack 31 formed by the process disclosed in this embodiment, Both have adhesive layers 202 .

Third Embodiment

FIG. 3A to FIG. 3H are schematic diagrams of corresponding structures in each step of the manufacturing method according to the third embodiment of the present invention, respectively. As shown in FIG. 3A, in this embodiment, the sacrificial layer 201 and the bonding layer 202 are first formed on the surface 311 of the semiconductor epitaxial stack 3 and the surface 1011 of the bonding substrate 101, respectively, and then as shown in FIG. 3B, Through the adhesive layer 202 and the sacrificial layer 201, the semiconductor epitaxial stack 3 is bonded to the bonding substrate 101 by heating and pressing. Since the material of the bonding layer 202 includes benzocyclobutene (BCB), in the above bonding process The middle sacrificial layer 201 will push away the material of the bonding layer 202 between the sacrificial layer 201 and the bonding substrate 101 , so that the thickness of the bonding layer 202 between the sacrificial layer 201 and the bonding substrate 101 is smaller than that between the semiconductor epitaxial stack 3 and the bonding substrate 101 . The thickness of the adhesive layer 202 between the two is to form the adhesive structure 2 in the figure. The difference between this embodiment and the aforementioned first embodiment is that the structure of the adhesive structure 2 is different, and the sacrificial layer 201 is located between the adhesive layer 202 . , not in contact with the surface 1011 of the bonding substrate 101 . Subsequent manufacturing processes are shown in FIG. 3B to FIG. 3H , which are the same as those of the first implementation.

Fourth Embodiment

二實施例的差異在於每一個第一半導體磊晶疊層31所對應的圖形化的犧牲層201被黏結層202所覆蓋，並且與黏結基板101黏結。 4A to 4C are schematic structural diagrams of a fourth embodiment according to the present invention. As shown in FIG. 4A , the difference between this embodiment and the aforementioned third embodiment is that the surface 311 of each first semiconductor epitaxial stack 31 is in contact with the patterned sacrificial layer 201 and the bonding layer 202 . Alternatively, as shown in FIG. 4B , the difference between this embodiment and the aforementioned first embodiment is that the surface 311 of each first semiconductor epitaxial stack 31 is in contact with the patterned sacrificial layer 201 and the bonding layer 202 . Alternatively, as shown in Figure 4C, this embodiment is the same as the aforementioned

The difference between the two embodiments is that the patterned sacrificial layer 201 corresponding to each of the first semiconductor epitaxial stacks 31 is covered by the bonding layer 202 and bonded to the bonding substrate 101 .

Fifth Embodiment

5A to 5G are schematic structural diagrams according to a fifth embodiment of the present invention. As shown in FIG. 5A , according to the optoelectronic semiconductor device manufacturing process disclosed in the present invention, an adhesive substrate 101 having a surface 1011 is provided, and an adhesive structure 2 is formed on the surface 1011 , and the adhesive structure 2 has a thickness t in the range of thickness t Between 1 μm and 10 μm, preferably between 2 μm and 6 μm. The material of the bonding substrate 101 includes an electrically insulating substrate or a conductive substrate, and the material of the electrically insulating substrate includes sapphire (Sapphire), diamond (Diamond), glass (Glass), quartz (Quartz), acrylic (Acryl), zinc oxide (ZnO) ), aluminum nitride (AlN), lithium aluminum oxide (LiAlO2), or ceramic substrates, etc.; materials for conductive substrates include silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), zinc oxide (ZnO), One or a combination of Gallium Nitride (GaN), Aluminum Nitride (AlN) or metallic materials. The material of the adhesive structure 2 includes organic materials, such as acrylic acid, unsaturated polyester epoxy resin (Unsaturated polyester), epoxy resin (Epoxy), oxetane (Oxetane), vinyl ether (Vinyl ether) , nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS) ), polyvinyl chloride (PVC), benzocyclobutene (BCB), etc.; or inorganic materials, such as metals including titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al), germanium (Ge), copper (Cu) or combinations thereof, oxides including indium tin oxide (ITO), cadmium tin oxide (CTO) , antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide, zinc oxide (ZnO), silicon oxide (SiOx), or nitrides including silicon nitride (SiNx) and the like. A growth substrate 102 is provided, and a semiconductor epitaxial stack 3 grown in an epitaxial manner is provided on the growth substrate 102 , and then the growth substrate 102 and the semiconductor epitaxial stack 3 are bonded to the surface 1011 by the adhesive structure 2 and bonded The substrate 101 is bonded. The semiconductor epitaxial stack 3 includes at least a first semiconductor layer 301 having a first conductivity type, a conversion unit 302 and a second semiconductor layer 303 having a second conductivity type, and are sequentially formed on the growth substrate 102 . The first semiconductor layer 301 and the second semiconductor layer 303 may be two single-layer structures or two multi-layer structures (a multi-layer structure refers to two or more layers). The first semiconductor layer 301 and the second semiconductor layer 303 have different conductivity types, electrical properties, polarities or elements depending on doping to provide electrons or holes. When the first semiconductor layer 301 is a p-type semiconductor, the second semiconductor layer 303 can be an n-type semiconductor with different electrical properties. On the contrary, when the first semiconductor layer 301 is an n-type semiconductor, the second semiconductor layer 303 can be a different electrical conductivity. a p-type semiconductor. The conversion unit 302 is formed between the first semiconductor layer 301 and the second semiconductor layer 303, and the conversion unit 302 converts light energy and electric energy into each other or causes conversion. The semiconductor epitaxial stack 3 can be further processed and applied to a semiconductor device, device, product, or circuit to perform or cause the mutual conversion of light energy and electrical energy. Specifically, the semiconductor epitaxial stack 3 can be further processed into one of a light emitting diode (LED), a laser diode (LD), a solar cell or a liquid crystal display. Taking the light emitting diode as an example, the wavelength of the emitted light can be adjusted by changing the physical and chemical composition of one or more layers in the semiconductor epitaxial stack 3 . Commonly used materials are aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, zinc oxide series (zinc oxide, ZnO). The conversion unit 302 can be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), a multi-quantum well (MWQ) ). Specifically, the conversion unit 302 can be a neutral, p-type or n-type semiconductor. When a current is applied through the semiconductor epitaxial stack 3, the conversion unit 302 will glow. When the conversion unit 302 is made of aluminum indium gallium phosphide (AlGaInP) based material, it will emit amber light of red, orange, and yellow light; when it is based on aluminum gallium indium nitride (AlGaInN) based material, it will emit light blue or green light.

In another embodiment, the adhesive structure 2 can be formed on the surface 3012 of the semiconductor epitaxial stack 3 first, and then the growth substrate 102 and the semiconductor epitaxial stack 3 are bonded to the surface 1011 of the bonding substrate 101 by the adhesive structure 2 is bonded to the bonding substrate 101 .

Continuing as shown in FIG. 5B , the growth substrate 102 is separated from the semiconductor epitaxial stack 3 and a surface 3011 of the semiconductor epitaxial stack 3 is exposed. The method for separating the growth substrate 102 includes using an illumination method, using laser light to penetrate the growth substrate 102 to irradiate the interface between the growth substrate 102 and the semiconductor epitaxial stack 3 to achieve the purpose of separating the semiconductor epitaxial stack 3 and the growth substrate 102 . In addition, wet etching can also be used to directly remove the growth substrate 102 , or remove the interface layer (not shown) between the growth substrate 102 and the semiconductor epitaxial stack 3 , thereby separating the growth substrate 102 and the semiconductor epitaxial stack 3 3. Besides, the interface layer (not shown) between the growth substrate 102 and the semiconductor epitaxial stack 3 can also be directly removed by vapor etching at high temperature, so as to achieve the purpose of separating the growth substrate 102 and the semiconductor epitaxial stack 3 .

Continuing as shown in FIG. 5C , a patterned adhesive medium 4 is formed on the surface 3011 of the semiconductor epitaxial stack 3 , wherein the method of forming the patterned adhesive medium 4 includes first forming a whole layer of the adhesive medium 4 on the surface 3011 Then, a patterned adhesive medium 4 is formed by a yellow light lithography process or a patterned etching method. The yellow light lithography process and the patterned etching are generally known semiconductor processes. The material of the adhesive medium 4 includes organic materials, such as acrylic acid, unsaturated polyester epoxy resin (Unsaturated polyester), epoxy resin (Epoxy), oxetane (Oxetane), vinyl ether (Vinyl ether) , nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS) ), polyvinyl chloride (PVC), benzocyclobutene (BCB), etc.; or inorganic materials, such as metals including titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al) , germanium (Ge), copper (Cu) or a combination thereof, the oxides include indium tin oxide (ITO), cadmium tin oxide (CTO), antimony oxide Tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide, zinc oxide (ZnO), silicon oxide (SiOx), or nitrides including silicon nitride (SiNx) and the like.

Continuing as shown in FIG. 5D, the semiconductor epitaxial stack 3 and the adhesive structure 2 are patterned to expose the surface 1011 to form a plurality of semiconductor epitaxial stacks separated from each other, wherein the plurality of semiconductor epitaxial stacks include at least one first A semiconductor epitaxial stack 31 and at least one second semiconductor epitaxial stack 32. In this embodiment, as shown in FIG. 5E and FIG. 5D, the area of the first semiconductor epitaxial stack 31 is larger than that of the second semiconductor epitaxial stack 31. The semiconductor epitaxial stacks 32 have a small area, and each of the first semiconductor epitaxial stacks 31 has an adhesive medium 4 , and each second semiconductor epitaxial stack 31 has no adhesive medium 4 on the surface 3011 . The method for patterning the semiconductor epitaxial stack 3 and the adhesive structure 2 may include dry etching or wet etching. The spacing width w between the first semiconductor epitaxial stack 31 and the second semiconductor epitaxial stack 32 is as small as possible to avoid waste caused by etching too much of the semiconductor epitaxial stack 3. The spacing width w in this embodiment is between 1 μm and 10 μm, preferably 5 μm.

Continuing as shown in FIG. 5F , a capturing element 103 is provided to adhere to the adhesive medium 4 by heating, pressurizing or utilizing the viscosity of the capturing element 103 itself. The extraction element 103 includes a conductive material, such as a conductive substrate or a printed circuit board, wherein the material of the conductive substrate includes silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), zinc oxide (ZnO), gallium nitride ( GaN), Aluminum Nitride (AlN), or one or a combination of metallic materials; printed circuit boards including single-sided, double-sided, multilayer, or flexible circuit boards; or non-conductive materials such as those containing Sapphire (Sapphire), Diamond (Diamond), Glass (Glass), Quartz (Quartz), Acrylic (Acryl), Zinc Oxide (ZnO), Aluminum Nitride (AlN), Lithium Aluminum Oxide (LiAlO2), Ceramic Substrate Or expanded polystyrene (EPS) tape, etc., wherein when the capturing element 103 is formed with the expanded polystyrene (EPS) tape, a rigid substrate can be provided for bonding with the expanded polystyrene (EPS) tape for bonding The expanded polystyrene (EPS) tape is supported to prevent the expanded polystyrene (EPS) tape from sticking to the surface 3011 of the second semiconductor epitaxial stack 32 .

In another embodiment, as shown in FIG. 11A , the capturing element 103 may further include a flexible substrate 1032 and a supporting structure 1031 , wherein the material of the flexible substrate 1032 includes polyester resin (PET), polynaphthalene polyethylene naphthalate (PEN) or polyimide (polyimide; PI), the material of the support structure 1031 includes sapphire (Sapphire), diamond (Diamond), glass (Glass), quartz (Quartz) or pressure A hard substrate such as Acryl is used to support the flexible substrate 1032 .

In another embodiment, the patterned adhesive medium 4 can be formed on the capture element 103 first, and the adhesive medium 4 can be aligned with the first semiconductor epitaxial layer 31 by using the alignment bonding technique. The adhesive medium 4 is bonded to the first semiconductor epitaxial stack 31 in a warm and pressurized manner to form the structure shown in FIG. 5F .

Then, as shown in FIG. 5G , the adhesive structure 2 is etched by a wet etching process or a vapor etching process, and the time of the wet etching process or the vapor etching process is controlled to completely separate the first semiconductor epitaxial stack 31 from the adhesive substrate 101 , and Part of the adhesive structure 2 is left between the second semiconductor epitaxial stack 32 and the bonding substrate 101 to support the second semiconductor epitaxial stack 32 .

In another embodiment, as the aforementioned capture element 103 includes a flexible substrate 1032 and a support structure 1031 , after the first semiconductor epitaxial stack 31 is separated from the sacrificial layer 201 , as shown in FIG. 11B , the The flexible substrate 1032 is separated from the support structure 1031, and is further fabricated into a flexible display.

Sixth Embodiment

6A to 6H are schematic structural diagrams according to a sixth embodiment of the present invention. As shown in FIG. 6A , according to the optoelectronic semiconductor device manufacturing process disclosed in the present invention, a bonding substrate 101 having a surface 1011 and a surface 1012 corresponding to the surface 1011 is provided, and the bonding substrate 101 has at least one hole 110 penetrating from the surface 1011 to the surface 1012 , the top view of the bonded substrate 101 is shown in FIG. 6B , wherein FIG. 6A is a cross-sectional view of the dotted line CC′ in FIG. 6B . The material of the bonding substrate 101 includes an electrically insulating substrate or a conductive substrate, and the material of the electrically insulating substrate includes Sapphire, Diamond, Glass, Quartz, Acrylic (Acryl), Zinc Oxide (ZnO), Aluminum Nitride (AlN), Lithium Aluminum Oxide (LiAlO2) or ceramic substrates, etc.; the materials of conductive substrates include silicon (Si), gallium arsenide (GaAs), carbide One or a combination of silicon (SiC), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN) or metal materials.

Next, as shown in FIG. 7C , a growth substrate 102 is provided, and a semiconductor epitaxial stack 3 grown in an epitaxial manner is provided on the growth substrate 102 , and then the semiconductor epitaxial stack 3 is bonded to the growth substrate 102 by an adhesive structure 2 . The surface 1011 of the bonding substrate 101 is bonded to the bonding substrate 101 , and the hole 110 exposes part of the bonding structure 2 . In this embodiment, the adhesive structure 2 can be formed on the surface 3012 of the semiconductor epitaxial stack 3 first, and then the growth substrate 102 and the semiconductor epitaxial stack 3 are bonded to the surface 1011 of the bonding substrate 101 by the adhesive structure 2 Bonded with the bonding substrate 101 .

The adhesive structure 2 has a thickness t, and the thickness t ranges from 1 μm to 10 μm, preferably from 2 μm to 6 μm. The material of the adhesive structure 2 includes organic materials, such as acrylic acid, unsaturated polyester epoxy resin (Unsaturated polyester), epoxy resin (Epoxy), oxetane (Oxetane), vinyl ether (Vinyl ether) , nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS) ), polyvinyl chloride (PVC), benzocyclobutene (BCB), etc.; or inorganic materials, such as metals including titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al) , germanium (Ge), copper (Cu) or combinations thereof, oxides including indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide , zinc oxide (ZnO), silicon oxide (SiOx), or nitrides including silicon nitride (SiNx) and the like. The semiconductor epitaxial stack 3 includes at least a first semiconductor layer 301 having a first conductivity type, a conversion unit 302 and a second semiconductor layer 303 having a second conductivity type, and are sequentially formed on the growth substrate 102 . The first semiconductor layer 301 and the second semiconductor layer 303 may be two single-layer structures or two multi-layer structures (a multi-layer structure refers to two or more layers). The first semiconductor layer 301 and the second semiconductor layer 303 have different conductivity types, electrical properties, polarities or elements depending on doping to provide electrons or holes. When the first semiconductor layer 301 is a p-type semiconductor, the second semiconductor layer 303 can be an n-type semiconductor with different electrical properties. On the contrary, when the first semiconductor layer 301 is an n-type semi-conductor A conductor, the second semiconductor layer 303 can be a p-type semiconductor with different electrical properties. The conversion unit 302 is formed between the first semiconductor layer 301 and the second semiconductor layer 303, and the conversion unit 302 converts light energy and electric energy into each other or causes conversion. The semiconductor epitaxial stack 3 can be further processed and applied to a semiconductor device, device, product, or circuit to perform or cause the mutual conversion of light energy and electrical energy. Specifically, the semiconductor epitaxial stack 3 can be further processed into one of a light emitting diode (LED), a laser diode (LD), a solar cell or a liquid crystal display. Taking the light emitting diode as an example, the wavelength of the emitted light can be adjusted by changing the physical and chemical composition of one or more layers in the semiconductor epitaxial stack 3 . Commonly used materials are aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, zinc oxide series (zinc oxide, ZnO). The conversion unit 302 can be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), a multi-quantum well (MWQ) ). Specifically, the conversion unit 302 can be a neutral, p-type or n-type semiconductor. When a current is applied through the semiconductor epitaxial stack 3, the conversion unit 302 emits light. When the conversion unit 302 is based on the material of aluminum indium gallium phosphide (AlGaInP), it will emit amber light of red, orange and yellow; when it is based on the material of aluminum gallium indium nitride (AlGaInN), it will emit light blue or green light.

Continuing as shown in FIG. 6D , the growth substrate 102 is separated from the semiconductor epitaxial stack 3 to expose the surface 3011 of the semiconductor epitaxial stack 3 , and a support structure 5 is formed on the surface 1012 of the bonding substrate 101 and the walls of the holes 110 1101 , and on the part of the adhesive structure 2 exposed from the hole 110 . The method for separating the growth substrate 102 may include the method described in the foregoing first embodiment. The material of the support structure 5 includes organic materials, such as ultraviolet light (UV) dissociative glue, such as acrylic acid (Acrylic acid), unsaturated polyester epoxy resin (Unsaturated polyester), epoxy resin (Epoxy), oxetane (Oxetane), vinyl ether (Vinyl ether), etc.; thermoplastics, such as nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate Esters (PC), Acrylonitrile-Butadiene-Styrene (ABS), polyvinyl chloride (PVC), etc.; or inorganic materials, such as metals including titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al), germanium (Ge) or its In combination, the oxide includes silicon oxide (SiOx), or the nitride includes silicon nitride (SiNx), or the like.

Continuing as shown in FIG. 6E, a patterned adhesive medium 4 is formed on the surface 3011 of the semiconductor epitaxial stack 3 corresponding to the holes 110, wherein the method of forming the patterned adhesive medium 4 includes first forming a whole layer of the adhesive medium 4. On the surface 3011, a patterned adhesive medium 4 is then formed by a yellow light lithography process or a patterned etching method. The yellow light lithography process and the patterned etching are commonly known semiconductor processes. The material of the adhesive medium 4 includes organic materials, such as acrylic acid, unsaturated polyester epoxy resin (Unsaturated polyester), epoxy resin (Epoxy), oxetane (Oxetane), vinyl ether (Vinyl ether) , nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS) ), polyvinyl chloride (PVC), etc.; or inorganic materials, such as metals including titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al), germanium (Ge), copper (Cu) ) or a combination thereof, the oxides include indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide, zinc oxide (ZnO), silicon oxide (SiOx), or the nitride includes silicon nitride (SiNx) or the like.

Continuing as shown in FIG. 6F, the semiconductor epitaxial stack 3 and the adhesive structure 2 are patterned and the surface 1011 is exposed to form a plurality of semiconductor epitaxial stacks separated from each other, wherein the plurality of semiconductor epitaxial stacks include at least one first A semiconductor epitaxial stack 31 and at least one second semiconductor epitaxial stack 32 with an adhesive medium 4 on each of the first semiconductor epitaxial stacks 31 , and a surface 3011 of each second semiconductor epitaxial stack 32 The above is the non-adhesive medium 4, wherein the first semiconductor epitaxial stack 31 is on the hole 110, so the adhesive force between the first semiconductor epitaxial stack 31 and the bonding substrate 101 is smaller than that between the second semiconductor epitaxial stack 32 and the bonding substrate 101. Adhesion between the bonded substrates 101 . The method of patterning the semiconductor epitaxial stack 3 and the adhesive structure 2 includes dry etching or wet etching. In this embodiment, dry etching is used to form the first semiconductor epitaxial stack. The interval width w between 31 and the second semiconductor epitaxial stack 32 is minimized as much as possible to avoid waste caused by etching too much semiconductor epitaxial stack 3. The interval width w in this embodiment is between 1 μm and 10 μm, preferably 5μm.

Next, as shown in FIG. 6G, a capturing element 103 is provided to adhere to the adhesive medium 4 by heating, pressing or using the viscosity of the capturing element 103 itself. The extraction element 103 includes a conductive material, such as a conductive substrate or a printed circuit board, wherein the material of the conductive substrate includes silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), zinc oxide (ZnO), gallium nitride ( GaN), Aluminum Nitride (AlN), or one or a combination of metallic materials; printed circuit boards including single-sided, double-sided, multilayer, or flexible circuit boards; or non-conductive materials such as those containing Sapphire (Sapphire), Diamond (Diamond), Glass (Glass), Quartz (Quartz), Acrylic (Acryl), Zinc Oxide (ZnO), Aluminum Nitride (AlN), Lithium Aluminum Oxide (LiAlO2), Ceramic Substrate Or expanded polystyrene (EPS) tape, etc., wherein when the capturing element 103 is formed with the expanded polystyrene (EPS) tape, a rigid substrate can be provided for bonding with the expanded polystyrene (EPS) tape for bonding The expanded polystyrene (EPS) tape is supported to prevent the expanded polystyrene (EPS) tape from sticking to the surface 3011 of the second semiconductor epitaxial stack 32 .

In another embodiment, as shown in FIG. 11A , the capturing element 103 may further include a flexible substrate 1032 and a supporting structure 1031 , wherein the material of the flexible substrate 1032 includes polyester resin (PET), polynaphthalene Polyethylene naphthalate (PEN) or polyimide (polyimide; PI), the material of the support structure includes sapphire (Sapphire), diamond (Diamond), glass (Glass), quartz (Quartz) or acrylic A hard substrate such as Acryl is used to support the flexible substrate 1032 .

In another embodiment, the patterned adhesive medium 4 can be formed on the capture element 103 first, and the adhesive medium 4 can be aligned with the first semiconductor epitaxial layer 31 by using the alignment bonding technique. The adhesive medium 4 is bonded to the first semiconductor epitaxial stack 31 in a warm and pressurized manner.

Continuing as shown in Figure 6H, when the material of the support structure 5 is a metal material, such as titanium (Ti), aluminum (Al), titanium tungsten (TiW), silver (Ag), etc., or a material containing silicon, such as silicon oxide (SiOx), nitrogen Silicon (SiNx) or polysilicon (poly-Si) and other materials can use wet etching or vapor etching to remove the support structure 5, and then apply force in the opposite direction to the extraction element 103 and the bonding substrate 101 respectively, so that the The first semiconductor epitaxial stack 31 is separated from the sacrificial layer 201. In this embodiment, the etchant used for wet etching includes hydrofluoric acid, and the chemical material used for vapor etching includes hydrogen fluoride (HF) vapor. If the material of the support structure 5 is an ultraviolet (UV) dissociative material, such as acrylic acid, unsaturated polyester epoxy resin (Unsaturated polyester), epoxy resin (Epoxy), oxetane (Oxetane) , vinyl ether, etc., using ultraviolet light (UV) to irradiate the support structure 5 can reduce or disappear the adhesive force between the support structure 5 and the adhesive structure 2, and then apply the force in the opposite direction to the extraction element 103 respectively. and bonding the substrate 101, so that the first semiconductor epitaxial stack 31 is separated from the support structure 5; if the support structure 5 is made of thermoplastic, such as nylon (Nylon), polypropylene (PP), polybutylene terephthalate Alcohol ester (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS), polyvinyl chloride (PVC), etc., heating the support structure 5 can make the support structure 5 The adhesive force between the adhesive structure 2 and the adhesive structure 2 is reduced or disappeared, and the force in the opposite direction is applied to the extraction element 103 and the adhesive substrate 101 respectively, so that the first semiconductor epitaxial stack 31 is separated from the support structure 5 .

In another embodiment, as the aforementioned capture element 103 includes a flexible substrate 1032 and a support structure 1031 , after the first semiconductor epitaxial stack 31 is separated from the sacrificial layer 201 , as shown in FIG. 11B , the The flexible substrate 1032 is separated from the support structure 1031, and is further fabricated into a flexible display.

Seventh Embodiment

FIGS. 7A to 7F are schematic diagrams of corresponding structures of each step of the manufacturing method according to the seventh embodiment of the present invention, respectively. The difference between this embodiment and the aforementioned second embodiment is that the bonding substrate 101 has a plurality of holes 120 corresponding to each of the first semiconductor epitaxial stacks 31 , so that the adhesive force between the first semiconductor epitaxial stack 31 and the bonding substrate 101 is improved. The adhesive force between the first semiconductor epitaxial stack 31 and the bonding substrate 101 is lower than that of the second embodiment, so as to increase the success probability of separating the first semiconductor epitaxial stack 31 and the bonding substrate 101 by mechanical force; or, When removing the sacrificial layer 201 by wet etching or vapor etching, the etching solution The chemical material used in the vapor etching including hydrofluoric acid includes hydrogen fluoride (HF) vapor, and the sacrificial layer 201 can be etched through the plurality of holes 120 to reduce the time required for the etching.

Eighth Embodiment

FIG. 8A to FIG. 8F are schematic diagrams of corresponding structures in each step of the manufacturing method according to the eighth embodiment of the present invention, respectively. The difference between this embodiment and the aforementioned seventh embodiment is that the adhesive structure 2 does not include a sacrificial layer, and the adhesive substrate 101 has a plurality of holes 120 corresponding to each of the first semiconductor epitaxial stacks 31 , so that the first semiconductor epitaxial stacks 31 The adhesive force with the bonding substrate 101 is lower than the adhesive force between the second semiconductor epitaxial stack 32 and the bonding substrate 101 , and the first semiconductor epitaxial stack 31 and the bonding substrate 101 can be separated by mechanical force.

Ninth Embodiment

9A to 9I are schematic diagrams of corresponding structures in each step of the manufacturing method according to the ninth embodiment of the present invention, respectively. Referring to FIG. 9A, a growth substrate 102 is provided with a surface 1021 for subsequent growth of semiconductor stacks. The materials constituting the growth substrate 102 include but are not limited to germanium (Ge), gallium arsenide (GaAs), and indium phosphide (InP). , gallium phosphide (GaP), sapphire (sapphire), silicon carbide (SiC), silicon (Si), lithium aluminum oxide (LiAlO2), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN) ) or a combination thereof. A patterned sacrificial layer 601 is formed on the surface 1021 of the growth substrate 102. The material of the sacrificial layer 601 includes semiconductor materials, such as aluminum arsenide (AlAs) or aluminum nitride (AlN), or oxides, such as silicon oxide (SiOx). ), wherein, if the material of the patterned sacrificial layer 601 is aluminum arsenide (AlAs) or aluminum nitride (AlN), the formation method includes growing by metal organic chemical vapor deposition (MOCVD), and then patterning If the material of the patterned sacrificial layer 601 is silicon oxide (SiOx), the formation method includes physical vapor deposition (PVD) or chemical vapor deposition (CVD) on the growth substrate. On 102, patterned etching is applied to form.

Continuing as shown in FIG. 9B , a semiconductor layer 304 is formed on the surface 1021 of the growth substrate 102 and covers the patterned sacrificial layer 601 , wherein the material of the semiconductor layer 304 is different from that of the sacrificial layer 601 . The semiconductor layer 304 may include a transition layer (not shown) or a window layer (not shown). The transition layer can be used as a buffer layer between the growth substrate 102 and the window layer, or between the growth substrate 102 and the semiconductor epitaxial stack 3 formed subsequently. In the structure of the light emitting diode, the transition layer is used to reduce the lattice mismatch between the two layers of materials. On the other hand, the transition layer can be a single layer, a multi-layer, a combination of two materials or a two-separate structure, wherein the material of the transition layer can be any one of organic metals, inorganic metals or semiconductors. The transition layer can also be used as a reflective layer, a thermal conduction layer, an electrical conduction layer, an ohmic contact layer, an anti-deformation layer, a stress release layer, a stress adjustment layer, a bonding layer, a wavelength conversion layer, or a fixed structure. The window layer is a semiconductor layer with a larger thickness, which can improve the light extraction efficiency of the semiconductor epitaxial stack 3 and increase the effect of lateral current distribution. The material of the window layer includes at least one element selected from aluminum (Al), A group consisting of gallium (Ga), indium (In), arsenic (As), phosphorus (P) and nitrogen (N), or a combination thereof, such as a semiconductor compound of GaN or AlGaInP.

Next, as shown in FIG. 9C, the semiconductor epitaxial stack 3 is further formed on the semiconductor layer 304, wherein the semiconductor epitaxial stack 3 includes at least a first semiconductor layer 301 having a first conductivity type, a conversion unit 302 and A second semiconductor layer 303 having a second conductivity type is sequentially formed on the growth substrate 102 . The first semiconductor layer 301 and the second semiconductor layer 303 may be two single-layer structures or two multi-layer structures (a multi-layer structure refers to two or more layers). The first semiconductor layer 301 and the second semiconductor layer 303 have different conductivity types, electrical properties, polarities or elements depending on doping to provide electrons or holes. When the first semiconductor layer 301 is a p-type semiconductor, the second semiconductor layer 303 can be an n-type semiconductor with different electrical properties. On the contrary, when the first semiconductor layer 301 is an n-type semiconductor, the second semiconductor layer 303 can be a different electrical conductivity. a p-type semiconductor. The conversion unit 302 is formed between the first semiconductor layer 301 and the second semiconductor layer 303, and the conversion unit 302 converts light energy and electric energy into each other or causes conversion. The semiconductor epitaxial stack 3 can be further processed and applied to a semiconductor device, device, product, or circuit to perform or cause the mutual conversion of light energy and electrical energy. Specifically, the semiconductor epitaxial stack 3 can be further processed into one of a light emitting diode (LED), a laser diode (LD), a solar cell or a liquid crystal display. Taking light-emitting diodes as an example, it can be changed by changing the half The physical and chemical composition of one or more layers in the conductor epitaxial stack 3 adjusts the wavelength of the emitted light. Commonly used materials are aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, zinc oxide series (zinc oxide, ZnO). The conversion unit 302 can be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), a multi-quantum well (MWQ) ). Specifically, the conversion unit 302 can be a neutral, p-type or n-type semiconductor. When a current is applied through the semiconductor epitaxial stack 3, the conversion unit 302 emits light. When the conversion unit 302 is based on the material of aluminum indium gallium phosphide (AlGaInP), it will emit amber light of red, orange and yellow; when it is based on the material of aluminum gallium indium nitride (AlGaInN), it will emit light blue or green light.

Continuing as shown in FIG. 9D, a patterned adhesive medium 4 is formed on the surface 3011 of the semiconductor epitaxial stack 3 corresponding to the patterned sacrificial layer 601, wherein the method of forming the patterned adhesive medium 4 includes first forming an integral The adhesive medium 4 of the layer is on the surface 3011, and then a patterned adhesive medium 4 is formed by a yellow light lithography process or a patterned etching method. The yellow light lithography process and the patterned etching process are commonly known semiconductor processes. The material of the adhesive medium 4 includes organic materials, such as acrylic acid, unsaturated polyester epoxy resin (Unsaturated polyester), epoxy resin (Epoxy), oxetane (Oxetane), vinyl ether (Vinyl ether) , nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS) ), polyvinyl chloride (PVC), benzocyclobutene (BCB), etc.; or inorganic materials, such as metals including titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al) , germanium (Ge), copper (Cu) or combinations thereof, oxides including indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide , zinc oxide (ZnO), silicon oxide (SiOx), or nitrides including silicon nitride (SiNx) and the like.

Continuing as shown in FIG. 9E, the semiconductor epitaxial stack 3 and the semiconductor layer 304 are patterned and the surface 1021 of the growth substrate 102 is exposed to form a plurality of semiconductor epitaxial stacks separated from each other, wherein a plurality of semiconductor epitaxial stacks are formed. Each of the semiconductor epitaxial stacks includes at least one first semiconductor epitaxial stack 31 and at least one second semiconductor epitaxial stack 32 , each of the first semiconductor epitaxial stacks 31 has an adhesive medium 4 , and each of the first semiconductor epitaxial stacks 31 is provided with an adhesive medium 4 . There is no adhesive medium 4 on the surface 3011 of the two semiconductor epitaxial stacks 32 . The method of patterning the semiconductor epitaxial stack 3 and the adhesive structure 2 includes dry etching or wet etching. In the present embodiment, dry etching is used to form the gap between the first semiconductor epitaxial stack 31 and the second semiconductor epitaxial stack 32. The interval width w between them is as small as possible to avoid waste caused by etching too much semiconductor epitaxial stack 3 . The interval width w in this embodiment is between 1 μm and 10 μm, preferably 5 μm. In this embodiment, since there is a sacrificial layer 601 between the first semiconductor epitaxial stack 31 and the growth substrate 102, and the second semiconductor epitaxial stack 32 is directly grown on the growth substrate 102, the control semiconductor layer 304 is epitaxial The parameter conditions of the crystal process, or the difference between the material properties of the sacrificial layer 601 and the semiconductor layer 304, for example, the material of the sacrificial layer 601 is oxide, so that the adhesion between the semiconductor layer 304 and the sacrificial layer 601 is smaller than that of the semiconductor layer 304 and the growth Adhesion between substrates 102 .

Continuing as shown in FIG. 9F , a capturing element 103 is provided to adhere to the adhesive medium 4 by heating, pressing or utilizing the viscosity of the capturing element 103 itself. The extraction element 103 includes a conductive material, such as a conductive substrate or a printed circuit board, wherein the material of the conductive substrate includes silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), zinc oxide (ZnO), gallium nitride ( GaN), Aluminum Nitride (AlN), or one or a combination of metallic materials; printed circuit boards including single-sided, double-sided, multilayer, or flexible circuit boards; or non-conductive materials such as those containing Sapphire (Sapphire), Diamond (Diamond), Glass (Glass), Quartz (Quartz), Acrylic (Acryl), Zinc Oxide (ZnO), Aluminum Nitride (AlN), Lithium Aluminum Oxide (LiAlO2), Ceramic Substrate Or expanded polystyrene (EPS) tape, etc.

In another embodiment, as shown in FIG. 11A , the capturing element 103 may further include a flexible substrate 1032 and a supporting structure 1031 , wherein the material of the flexible substrate 1032 includes polyester resin (PET), polynaphthalene Polyethylene naphthalate (PEN) or polyimide (polyimide; PI), the material of the support structure includes sapphire (Sapphire), diamond (Diamond), A hard substrate such as glass (Glass), quartz (Quartz) or acrylic (Acryl) is used to support the flexible substrate 1032 .

In another embodiment, the patterned adhesive medium 4 can be formed on the capture element 103 first, and the adhesive medium 4 can be aligned with the first semiconductor epitaxial layer 31 by using the alignment bonding technique. The adhesive medium 4 is bonded to the first semiconductor epitaxial stack 31 in a warm and pressurized manner.

Continuing as shown in Figure 9G, if the sacrificial layer 601 is oxide (SiOx) or aluminum arsenide (AlAs), wet etching or vapor etching can be used to remove the sacrificial layer 601, and then apply force in the opposite direction respectively. In the extraction element 103 and the growth substrate 102, the first semiconductor epitaxial stack 31 is separated from the sacrificial layer 601. In this embodiment, the etchant used for wet etching includes hydrofluoric acid, and the chemical material used for vapor etching includes hydrogen fluoride ( HF) vapor. Or as shown in FIGS. 9H and 9I, when the material of the sacrificial layer 601 is a non-semiconductor material, such as oxide (SiOx), the temperature and pressure of the lateral epitaxial stage in the epitaxial process of the semiconductor layer 304 are controlled, such as controlling When the temperature is between 1000°C and 1100°C and the pressure is between 400mbr and 600mbar, a void 602 is formed between the semiconductor layer 304 and the sacrificial layer 601, so that the contact area between the semiconductor layer 304 and the sacrificial layer 601 is reduced, And since the contact area between the semiconductor layer 304 and the second semiconductor layer 303 is larger than the contact area with the growth substrate 102 , a force in the opposite direction can be applied to the extraction element 103 and the growth substrate 102 to directly separate the first semiconductor epitaxy. The stack 31 and the sacrificial layer 601 separate the first semiconductor epitaxial stack 31 from the growth substrate 102 . In this embodiment, the semiconductor layer 304 includes a transition layer (not shown). The transition layer can be used as a buffer layer between the growth substrate 102 and the second semiconductor layer 303 formed subsequently. The transition layer is used to reduce the lattice mismatch between the two layers of materials. On the other hand, the transition layer can be a single layer, a multi-layer, a combination of two materials or a two-separate structure, wherein the material of the transition layer can be any one of organic metals, inorganic metals or semiconductors. The transition layer can also be used as a reflective layer, a thermal conduction layer, an electrical conduction layer, an ohmic contact layer, an anti-deformation layer, a stress release layer, a stress adjustment layer, a bonding layer, a wavelength conversion layer, or a fixed structure. In this embodiment, as shown in FIG. 9H and FIG. 9I, the second semiconductor layer 303 has a first lower surface 303s in contact with the semiconductor layer 304, and the semiconductor layer 304 There is a second lower surface 304s facing the growth substrate 102, the second lower surface 304s is not parallel to the first lower surface 303s, and the second lower surface 304s is an arc surface.

In another embodiment, as shown in FIG. 11A , the capturing element 103 may further include a flexible substrate 1032 and a supporting structure 1031 , wherein the material of the flexible substrate 1032 includes polyester resin (PET), polynaphthalene Polyethylene naphthalate (PEN) or polyimide (polyimide; PI), the material of the support structure includes sapphire (Sapphire), diamond (Diamond), glass (Glass), quartz (Quartz) or acrylic A hard substrate such as Acryl is used to support the flexible substrate 1032 .

Tenth Embodiment

FIG. 10A to FIG. 10C are schematic diagrams of corresponding structures in each step of the manufacturing method according to the tenth embodiment of the present invention, respectively. As shown in FIGS. 10A to 10C , the difference between the tenth embodiment and the ninth embodiment is that the adhesive medium 4 is located on the second semiconductor epitaxial stack 32 , while the surface 3011 of the first semiconductor epitaxial stack 31 is exposed. As shown in FIG. 10C, when the material of the semiconductor layer 304 is gallium nitride (GaN), the material of the sacrificial layer 601 is aluminum nitride (AlN), and the growth substrate 102 is a transparent substrate, a laser beam 7 can be used to The other surface 1022 of the growth substrate 102 is incident for irradiating the semiconductor layer 304 and the sacrificial layer 601, wherein the energy of the laser light 7 is greater than the energy gap of gallium nitride (GaN) and smaller than the energy gap of aluminum nitride (AlN), using To separate the semiconductor layer 304 and the growth substrate 102 in each of the second semiconductor epitaxial stacks 32, and then apply a force in the opposite direction to the extraction element 103 and the growth substrate 102 to separate the second semiconductor epitaxial stack 32 from the growth substrate 102. Growth substrate 102 .

101: Bonding the substrate

103: Capture Components

201: Sacrificial Layer

202: Bonding layer

31: The first semiconductor epitaxial stack

32: Second semiconductor epitaxial stack

4: Adhesive medium

Claims (9)

A semiconductor device, comprising: a substrate; a semiconductor epitaxial stack located on the substrate with a first thickness, including: a first semiconductor layer; a second semiconductor layer, electrically different from the first semiconductor layer , and has a first lower surface; and a conversion unit located between the first semiconductor layer and the second semiconductor layer; and a transition layer located under the semiconductor epitaxial stack and in contact with the substrate; wherein , the contact area of the transition layer with the second semiconductor layer is larger than the contact area with the substrate. The semiconductor element of claim 1, wherein the transition layer directly contacts the second semiconductor layer. The semiconductor element according to claim 1, wherein the material of the transition layer contains a bonding material. The semiconductor element according to claim 1, wherein the material of the transition layer contains a semiconductor material. The semiconductor device of claim 1, wherein the transition layer has a second lower surface facing the substrate and not parallel to the first lower surface. The semiconductor element according to claim 1, wherein the semiconductor element does not include a growth substrate. The semiconductor device of claim 1, wherein the transition layer has a non-uniform thickness. The semiconductor device of claim 1, further comprising a void located between the transition layer and the substrate. The semiconductor device of claim 5, wherein the second lower surface includes an arc surface.

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