TWI722242B - A semiconductor device - Google Patents

Abstract

A semiconductor device comprises a substrate having a first surface; a semiconductor unit on the first surface; and a adhesion structure between the first surface and the semiconductor unit and directly contacting the semiconductor unit and the substrate; wherein the adhesion structure comprises an adhesion layer and a sacrificing layer. and the materials of the adhesion layer and the sacrificing layer are different.

Description

A semiconductor device

The present invention relates to a manufacturing method of a photoelectric semiconductor element.

With the rapid development of science and technology, optoelectronic semiconductor devices have made great contributions to the transmission of information and the conversion of energy. Take the use of systems as examples, such as optical fiber communications, optical storage, and military systems. Optoelectronic semiconductor components can all play a role. It is distinguished by the way of energy conversion. Optoelectronic semiconductor components can generally be divided into three categories: the radiation that converts electrical energy into light, such as light-emitting diodes and laser diodes; and the conversion of light signals into electrical signals, such as light. Detector; converts the radiant energy of light into electrical energy, such as solar cells.

Among optoelectronic semiconductor components, growth substrates play a very important role. The semiconductor epitaxial structures necessary for forming optoelectronic semiconductor devices are grown on the substrate and supported by the substrate. Therefore, choosing a suitable growth substrate often becomes an important factor in determining the growth quality of the optoelectronic semiconductor devices.

However, sometimes a good device growth substrate is not necessarily a good device carrier substrate. Taking light-emitting diodes as an example, in the conventional red light device manufacturing process, in order to improve the growth quality of the device, an opaque gallium arsenide (GaAs) substrate with a lattice constant that is close to the semiconductor epitaxial structure is selected as the growth substrate. . However, for light-emitting diode devices whose operation purpose is to emit light, during the operation, the opaque growth substrate will cause the luminous efficiency of the device to decrease.

In order to meet the different requirements of optoelectronic semiconductor devices for growth substrates and carrier substrates, substrate transfer technology has been developed accordingly. That is, the semiconductor epitaxial structure is grown on the growth substrate first, and then the grown semiconductor epitaxial structure is transferred to the carrier substrate to facilitate subsequent device operations. After the semiconductor epitaxial structure is combined with the carrier substrate, the removal of the original growth substrate becomes one of the keys to the transfer technology.

The method of removing the growth substrate mainly includes etching and dissolving the original growth substrate with an etching solution, cutting and grinding off physically, or forming a sacrificial layer between the growth substrate and the semiconductor epitaxial structure in advance, and then removing the sacrificial layer by etching The method separates the growth substrate from the semiconductor and so on. However, whether it is to dissolve the substrate in an etching solution or to remove the substrate by physical cutting, it is a kind of damage to the original growth substrate. The growth substrate cannot be reused. In the modern era that emphasizes environmental protection and energy saving, it is undoubtedly a waste of materials. However, if a sacrificial layer structure is used for separation, for optoelectronic semiconductor devices, how to efficiently and selectively transfer is one of the current research directions.

A semiconductor device includes a substrate having a first surface; a semiconductor element is located on the first surface; and a bonding structure is located between the first surface and the semiconductor element, and is in direct contact with the semiconductor element and the substrate; wherein The bonding structure includes a bonding layer and a sacrificial layer, and the bonding layer and the sacrificial layer have different materials.

The first embodiment

Fig. 1A to Fig. 1I are schematic diagrams of the corresponding structure in each step of the manufacturing method according to the first embodiment of the present invention. Please refer to Figure 1A and Figure 1B, where Figure 1A is a cross-sectional view of the dashed line AA' in Figure 1B. According to the photoelectric semiconductor device manufacturing process disclosed in the present invention, a bonding substrate 101 is provided with a surface 1011, and an adhesive structure 2 is formed on the surface 1011. The adhesive structure 2 has a thickness t. In this embodiment, the range of the thickness t is between It is between 1 μm and 10 μm, preferably between 2 μm and 6 μm. The adhesive structure 2 includes an adhesive layer 202 and a sacrificial layer 201. The adhesive layer 202 and the sacrificial layer 201 are juxtaposed on the surface 1011 and connected to the surface 1011. As shown in the top view of the adhesive structure 2 in FIG. The sacrificial layers 201 each have a specific shape.

The material of the bonding substrate 101 includes an electrically insulating substrate or a conductive substrate, and the material of the electrically insulating substrate includes Sapphire, Diamond, Glass, Quartz, Acrylic, and Zinc Oxide (ZnO). ), aluminum nitride (AlN), lithium aluminum oxide (LiAlO2) or ceramic substrates, etc.; conductive substrate materials include silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), zinc oxide (ZnO), One or a combination of gallium nitride (GaN), aluminum nitride (AlN) or metal materials. In this embodiment, the material of the bonding layer 202 is different from that of the sacrificial layer 201. The material of the bonding layer 202 includes benzocyclobutene (BCB); the material of the sacrificial layer 201 includes organic materials, such as ultraviolet (UV) dissociation glue. Contains acrylic acid (Acrylic acid), unsaturated polyester epoxy resin (Unsaturated polyester), epoxy resin (Epoxy), oxetane (Oxetane), vinyl ether (Vinyl ether), etc.; thermoplastic plastic, including nylon (Nylon) ), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS), polychlorine Ethylene (PVC), etc.; or inorganic materials, such as metals containing titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al), germanium (Ge) or combinations thereof, and oxides containing SiOx , Or the nitride contains SiNx and the like.

Next, as shown in FIG. 1C, a growth substrate 102 is provided. On the growth substrate 102 there is a semiconductor epitaxial stack 3 grown in an epitaxial manner, and then the growth substrate 102 and the semiconductor epitaxial stack 3 are bonded by the adhesive structure 2 , It is bonded to the surface 1011 and bonded to the bonding substrate 101 by heating and pressing, wherein the bonding layer 202 and the sacrificial layer 201 are both connected to the semiconductor epitaxial stack 3. Since the material of the bonding layer 202 is different from that of the sacrificial layer 201, the adhesive force between the semiconductor epitaxial stack 3 and the bonding layer 202 is different from the adhesive force between the semiconductor epitaxial stack 3 and the sacrificial layer 201 In this embodiment, the adhesive force between the semiconductor epitaxial stack 3 and the bonding layer 202 is greater than the adhesive force between the semiconductor epitaxial stack 3 and the sacrificial layer 201.

The semiconductor epitaxial stack 3 includes at least one first semiconductor layer 301 having a first conductivity type, a conversion unit 302 and a second semiconductor layer 303 having a second conductivity type, which are sequentially formed on the growth substrate 102 . The first semiconductor layer 301 and the second semiconductor layer 303 may have two single-layer structures or two multi-layer structures (a multi-layer structure refers to two or more layers). The first semiconductor layer 301 and the second semiconductor layer 303 have different conductivity types, electrical properties, polarities or doped elements to provide electrons or holes. When the first semiconductor layer 301 is a p-type semiconductor, the second semiconductor layer 303 can be an n-type semiconductor with different electrical properties. Conversely, when the first semiconductor layer 301 is an n-type semiconductor, the second semiconductor layer 303 can be a different electrical semiconductor. Sexual p-type semiconductor. The conversion unit 302 is formed between the first semiconductor layer 301 and the second semiconductor layer 303, and the conversion unit 302 converts or causes conversion between light energy and electric energy. The semiconductor epitaxial stack 3 can be further processed and applied to a semiconductor element, device, product, or circuit to perform or cause the mutual conversion of light energy and electric energy. Specifically, the semiconductor epitaxial stack 3 can be further processed into one of a light emitting diode (LED), a laser diode (LD), a solar cell or a liquid crystal display. Taking a light emitting diode as an example, the wavelength of the emitted light can be adjusted by changing the physical and chemical composition of one or more layers of the semiconductor epitaxial stack 3. Commonly used materials are aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, and zinc oxide (ZnO) series. The conversion unit 302 can be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well (MWQ). ). Specifically, the conversion unit 302 can be a neutral, p-type or n-type semiconductor. When a current is applied to the semiconductor epitaxial stack 3, the conversion unit 302 emits light. When the conversion unit 302 is based on aluminum indium gallium phosphide (AlGaInP), it will emit red, orange, and yellow amber light; when it is based on aluminum gallium indium nitride (AlGaInN), it will emit Blue or green light.

As shown in FIG. 1D, the growth substrate 102 is separated from the semiconductor epitaxial stack 3 and one surface 3011 of the semiconductor epitaxial stack 3 is exposed. The method of separating the growth substrate 102 includes using the illumination method to illuminate the interface between the growth substrate 102 and the semiconductor epitaxial stack 3 with laser light penetrating the growth substrate 102 to achieve the purpose of separating the semiconductor epitaxial stack 3 and the growth substrate 102 . In addition, the growth substrate 102 can also be directly removed by wet etching, or the interface layer (not shown) between the growth substrate 102 and the semiconductor epitaxial stack 3 can be removed to separate the growth substrate 102 and the semiconductor epitaxial stack 3 3. In addition, vapor etching can be used to directly remove the interface layer (not shown) between the growth substrate 102 and the semiconductor epitaxial stack 3 at high temperature to achieve the purpose of separating the growth substrate 102 and the semiconductor epitaxial stack 3 .

As shown in FIG. 1E, a patterned adhesive medium 4 corresponding to the sacrificial layer 201 is formed on the surface 3011 of the semiconductor epitaxial stack 3, wherein the method of forming the patterned adhesive medium 4 includes first forming a whole layer of the adhesive medium 4 On the surface 3011, a patterned adhesive medium 4 is formed by yellow light lithography process or patterned etching. The yellow light lithography process and patterned etching are generally known semiconductor processes. The material of the adhesive medium 4 includes organic materials, such as Acrylic acid, Unsaturated polyester, Epoxy, Oxetane, Vinyl ether , Nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS) ), polyvinyl chloride (PVC), benzocyclobutene (BCB), etc.; or inorganic materials, such as metals including titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al) , Germanium (Ge), copper (Cu) or a combination thereof, the oxides include indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide , Zinc oxide (ZnO), silicon oxide (SiOx), or nitride containing silicon nitride (SiNx), etc.

As shown in FIG. 1F, the semiconductor epitaxial stack 3 and the adhesive structure 2 are patterned and the surface 1011 is exposed to form a plurality of semiconductor epitaxial stacks separated from each other, wherein the plurality of semiconductor epitaxial stacks includes at least one first A semiconductor epitaxial stack 31 and at least one second semiconductor epitaxial stack 32 have an adhesive medium 4 on each first semiconductor epitaxial stack 31, and a surface 3011 of each second semiconductor epitaxial stack 32 There is no adhesive medium 4 on the top. The method of patterning the semiconductor epitaxial stack 3 and the adhesive structure 2 includes dry etching or wet etching. In this embodiment, a dry etching process is used to make the first semiconductor epitaxial stack 31 and the second semiconductor epitaxial stack 32 The gap width w between the gaps is as small as possible to avoid waste due to excessive etching of the semiconductor epitaxial stack 3. The gap width w in this embodiment is between 1 μm and 10 μm, and preferably 5 μm.

Next, as shown in FIG. 1G, a capturing element 103 is provided to bond with the adhesive medium 4 by heating, pressing, or using the viscosity of the capturing element 103 itself. The extraction element 103 includes a conductive material, such as a conductive substrate or a printed circuit board. The material of the conductive substrate includes silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), zinc oxide (ZnO), gallium nitride ( GaN), aluminum nitride (AlN) or one or a combination of metal materials; printed circuit boards include single-sided printed circuit boards, double-sided printed circuit boards, multilayer printed circuit boards or flexible circuit boards; or non-conductive materials, such as Sapphire, Diamond, Glass, Quartz, Acrylic, Zinc Oxide (ZnO), Aluminum Nitride (AlN), Lithium Aluminum Oxide (LiAlO2), Ceramic Substrate Or expanded polystyrene (EPS) tape, etc., when the extraction element 103 is formed with expanded polystyrene (EPS) tape, a rigid substrate can be provided for bonding with the expanded polystyrene (EPS) tape to Support the expanded polystyrene (EPS) tape to prevent the expanded polystyrene (EPS) tape from sticking to the surface 3011 of the second semiconductor epitaxial laminate 32. In another embodiment, as shown in FIG. 11A, the capturing element 103 may further include a flexible substrate 1032 and a supporting structure 1031, wherein the material of the flexible substrate 1032 includes polyester resin (PET), polynaphthalene Polyethylene naphthalate (PEN) or polyimide (PI), the material of the support structure includes sapphire (Sapphire), diamond (Diamond), glass (Glass), quartz (Quartz) or acrylic A hard substrate such as Acryl is used to support the flexible substrate 1032.

In another embodiment, a patterned adhesive medium 4 may be formed on the extraction element 103 first, and the adhesive medium 4 may be aligned with the first semiconductor epitaxial stack 31 by using an alignment bonding technique. The bonding medium 4 and the first semiconductor epitaxial stack 31 are bonded by a gentle pressure method.

As shown in Figure 1H, if the adhesion between the sacrificial layer 201 and the first semiconductor epitaxial stack 31 is less than the adhesion between the adhesive medium 4 and the first semiconductor epitaxial stack 31, the opposite directions can be directly applied. The force of the capture device 103 and the bonding substrate 101 separates the first semiconductor epitaxial stack 31 from the sacrificial layer 201 without damaging the structure of the first semiconductor epitaxial stack 31. For example, when the material of the sacrificial layer 201 is Ultraviolet light (UV) dissociation materials include Acrylic acid, Unsaturated polyester, Epoxy, Oxetane, Vinyl ether, etc., Using ultraviolet light (UV) to irradiate the sacrificial layer 201 can reduce or disappear the adhesive force of the sacrificial layer 201, and then apply forces in opposite directions to the capture element 103 and the bonding substrate 101, so that the first semiconductor epitaxial stack 31 and The sacrificial layer 201 is separated; or, when the material of the sacrificial layer 201 is thermoplastic, including nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate Ester (PC), acrylonitrile-butadiene-styrene (ABS), polyvinyl chloride (PVC), etc., heating the sacrificial layer 201 can reduce or disappear the adhesion between the sacrificial layers 201, and then apply the opposite directions respectively The force of the capture element 103 and the bonding substrate 101 separates the first semiconductor epitaxial stack 31 from the sacrificial layer 201; or when the adhesion medium 4 is made of a material with high adhesion such as benzocyclobutene (BCB) When the material of the sacrificial layer 201 is made of a material with low adhesion, it is not necessary to apply light irradiation or heating to the sacrificial layer 201 for modification, and directly apply forces in opposite directions to the capture element 103 and the bonding substrate. 101. Separate the first semiconductor epitaxial stack 31 from the sacrificial layer 201, where the material with lower adhesion includes metal materials, such as titanium (Ti), aluminum (Al), titanium tungsten alloy (TiW), etc., oxides, For example, silicon oxide (SiOx), or nitride, such as silicon nitride (SiNx).

In addition, as shown in Figure 11, when the material of the sacrificial layer 201 is a metal material, such as titanium (Ti), aluminum (Al), titanium tungsten (TiW), silver (Ag), etc., or a material containing silicon, such as oxide For materials such as silicon (SiOx), silicon nitride (SiNx), or polysilicon (poly-Si), wet etching or vapor etching can be used to remove the sacrificial layer 201, and then apply forces in opposite directions to the extraction element 103. And the bonding substrate 101 to separate the first semiconductor epitaxial stack 31 and the sacrificial layer 201. In this embodiment, the etching solution used for wet etching includes hydrofluoric acid, and the chemical material used for vapor etching includes hydrogen fluoride (HF) vapor.

In another embodiment, as the aforementioned capturing element 103 includes a flexible substrate 1032 and a supporting structure 1031, after the first semiconductor epitaxial stack 31 is separated from the sacrificial layer 201, as shown in FIG. 11B, the The flexible substrate 1032 is separated from the supporting structure 1031, and is further fabricated into a flexible display.

Second embodiment

Figures 2A to 2H are schematic diagrams of the corresponding structures in each step of the manufacturing method according to the second embodiment of the present invention. As shown in FIG. 2A, the difference between this embodiment and the aforementioned first embodiment lies in the structure of the adhesive structure 2. In this embodiment, the sacrificial layer 201 is located between the surface 1011 of the bonding substrate 101 and the bonding layer 202. Subsequent manufacturing processes are shown in FIGS. 2B to 2H, which are the same as the foregoing first embodiment, in which, on the surface 311 of each first semiconductor epitaxial stack 31 formed by the process disclosed in this embodiment, All have an adhesive layer 202.

The third embodiment

Figures 3A to 3H are schematic diagrams of the corresponding structures in each step of the manufacturing method according to the third embodiment of the present invention. As shown in FIG. 3A, in this embodiment, the sacrificial layer 201 and the bonding layer 202 are first formed on the surface 311 of the semiconductor epitaxial stack 3 and the surface 1011 of the bonding substrate 101, respectively, as shown in FIG. 3B. Through the bonding layer 202 and the sacrificial layer 201, the semiconductor epitaxial stack 3 and the bonding substrate 101 are bonded by heating and pressing. Since the material of the bonding layer 202 includes benzocyclobutene (BCB), during the above bonding process The middle sacrificial layer 201 pushes away the material of the bonding layer 202 between the sacrificial layer 201 and the bonding substrate 101, so that the thickness of the bonding layer 202 between the sacrificial layer 201 and the bonding substrate 101 is smaller than that between the semiconductor epitaxial stack 3 and the bonding substrate 101 The thickness of the bonding layer 202 between them is to form the bonding structure 2 in the figure. The difference between this embodiment and the foregoing first embodiment is that the structure of the adhesive structure 2 is different. The sacrificial layer 201 is located on the adhesive layer 202 and does not contact the surface 1011 of the adhesive substrate 101. The subsequent manufacturing process as shown in FIG. 3B to FIG. 3H is the same as the foregoing first embodiment.

Fourth embodiment

4A to 4C are schematic diagrams of the structure according to the fourth embodiment of the present invention. As shown in FIG. 4A, the difference between this embodiment and the foregoing third embodiment is that the surface 311 of each first semiconductor epitaxial stack 31 is in contact with the patterned sacrificial layer 201 and the bonding layer 202. Or, as shown in FIG. 4B, the difference between this embodiment and the foregoing first embodiment is that the surface 311 of each first semiconductor epitaxial stack 31 is in contact with the patterned sacrificial layer 201 and the bonding layer 202. Or, as shown in FIG. 4C, the difference between this embodiment and the foregoing second embodiment is that the patterned sacrificial layer 201 corresponding to each first semiconductor epitaxial stack 31 is covered by the adhesion layer 202 and is different from The bonding substrate 101 is bonded.

Fifth embodiment

5A to 5G are schematic diagrams of the structure of the fifth embodiment of the present invention. As shown in FIG. 5A, according to the optoelectronic semiconductor device manufacturing process disclosed in the present invention, an adhesive substrate 101 is provided with a surface 1011, and an adhesive structure 2 is formed on the surface 1011. The adhesive structure 2 has a thickness t and a range of thickness t It is between 1 μm and 10 μm, preferably between 2 μm and 6 μm. The material of the bonding substrate 101 includes an electrically insulating substrate or a conductive substrate, and the material of the electrically insulating substrate includes Sapphire, Diamond, Glass, Quartz, Acrylic, and Zinc Oxide (ZnO). ), aluminum nitride (AlN), lithium aluminum oxide (LiAlO2) or ceramic substrates, etc.; conductive substrate materials include silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), zinc oxide (ZnO), One or a combination of gallium nitride (GaN), aluminum nitride (AlN) or metal materials. The material of the adhesive structure 2 includes organic materials, such as Acrylic acid, Unsaturated polyester, Epoxy, Oxetane, Vinyl ether , Nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS) ), polyvinyl chloride (PVC), benzocyclobutene (BCB), etc.; or inorganic materials, such as metals including titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al) , Germanium (Ge), copper (Cu) or a combination thereof, the oxides include indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide , Zinc oxide (ZnO), silicon oxide (SiOx), or nitride containing silicon nitride (SiNx), etc. A growth substrate 102 is provided. On the growth substrate 102 there is a semiconductor epitaxial stack 3 grown epitaxially, and then the growth substrate 102 and the semiconductor epitaxial stack 3 are bonded to the surface 1011 and bonded by the adhesive structure 2 The substrate 101 is bonded. The semiconductor epitaxial stack 3 includes at least one first semiconductor layer 301 having a first conductivity type, a conversion unit 302 and a second semiconductor layer 303 having a second conductivity type, which are sequentially formed on the growth substrate 102 . The first semiconductor layer 301 and the second semiconductor layer 303 may have two single-layer structures or two multi-layer structures (a multi-layer structure refers to two or more layers). The first semiconductor layer 301 and the second semiconductor layer 303 have different conductivity types, electrical properties, polarities or doped elements to provide electrons or holes. When the first semiconductor layer 301 is a p-type semiconductor, the second semiconductor layer 303 can be an n-type semiconductor with different electrical properties. Conversely, when the first semiconductor layer 301 is an n-type semiconductor, the second semiconductor layer 303 can be a different electrical semiconductor. Sexual p-type semiconductor. The conversion unit 302 is formed between the first semiconductor layer 301 and the second semiconductor layer 303, and the conversion unit 302 converts or causes conversion between light energy and electric energy. The semiconductor epitaxial stack 3 can be further processed and applied to a semiconductor element, device, product, or circuit to perform or cause the mutual conversion of light energy and electric energy. Specifically, the semiconductor epitaxial stack 3 can be further processed into one of a light emitting diode (LED), a laser diode (LD), a solar cell or a liquid crystal display. Taking a light emitting diode as an example, the wavelength of the emitted light can be adjusted by changing the physical and chemical composition of one or more layers of the semiconductor epitaxial stack 3. Commonly used materials are aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, and zinc oxide (ZnO) series. The conversion unit 302 can be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well (MWQ). ). Specifically, the conversion unit 302 can be a neutral, p-type or n-type semiconductor. When a current is applied to the semiconductor epitaxial stack 3, the conversion unit 302 emits light. When the conversion unit 302 is based on aluminum indium gallium phosphide (AlGaInP), it will emit red, orange, and yellow amber light; when it is based on aluminum gallium indium nitride (AlGaInN), it will emit Blue or green light.

In another embodiment, the adhesive structure 2 may be formed on the surface 3012 of the semiconductor epitaxial stack 3 first, and then the growth substrate 102 and the semiconductor epitaxial stack 3 are bonded to the surface 1011 of the bonded substrate 101 by the adhesive structure 2 The upper is bonded to the bonding substrate 101.

Next, as shown in FIG. 5B, the growth substrate 102 is separated from the semiconductor epitaxial stack 3 and one surface 3011 of the semiconductor epitaxial stack 3 is exposed. The method of separating the growth substrate 102 includes using the illumination method to illuminate the interface between the growth substrate 102 and the semiconductor epitaxial stack 3 with laser light penetrating the growth substrate 102 to achieve the purpose of separating the semiconductor epitaxial stack 3 and the growth substrate 102 . In addition, the growth substrate 102 can also be directly removed by wet etching, or the interface layer (not shown) between the growth substrate 102 and the semiconductor epitaxial stack 3 can be removed to separate the growth substrate 102 and the semiconductor epitaxial stack 3 3. In addition, vapor etching can be used to directly remove the interface layer (not shown) between the growth substrate 102 and the semiconductor epitaxial stack 3 at high temperature to achieve the purpose of separating the growth substrate 102 and the semiconductor epitaxial stack 3 .

Next, as shown in FIG. 5C, a patterned adhesive medium 4 is formed on the surface 3011 of the semiconductor epitaxial stack 3. The method of forming the patterned adhesive medium 4 includes first forming a whole layer of the adhesive medium 4 on the surface 3011 Above, the patterned adhesive medium 4 is formed by the yellow light lithography process or patterned etching. The yellow light lithography process and patterned etching are generally known semiconductor manufacturing processes. The material of the adhesive medium 4 includes organic materials, such as Acrylic acid, Unsaturated polyester, Epoxy, Oxetane, Vinyl ether , Nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS) ), polyvinyl chloride (PVC), benzocyclobutene (BCB), etc.; or inorganic materials, such as metals including titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al) , Germanium (Ge), copper (Cu) or a combination thereof, the oxides include indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide , Zinc oxide (ZnO), silicon oxide (SiOx), or nitride containing silicon nitride (SiNx), etc.

As shown in FIG. 5D, the semiconductor epitaxial stack 3 and the adhesive structure 2 are patterned to expose the surface 1011 to form a plurality of semiconductor epitaxial stacks separated from each other, wherein the plurality of semiconductor epitaxial stacks includes at least one first One semiconductor epitaxial stack 31 and at least one second semiconductor epitaxial stack 32. In this embodiment, as shown in the top view of Figure 5D in Figure 5E, the area of the first semiconductor epitaxial stack 31 is larger than that of the second semiconductor epitaxial stack. The area of the semiconductor epitaxial stack 32 is small, and there is an adhesive medium 4 on each first semiconductor epitaxial stack 31, and there is no adhesive medium 4 on the surface 3011 of each second semiconductor epitaxial stack 31. The method of patterning the semiconductor epitaxial stack 3 and the adhesive structure 2 may include dry etching or wet etching. In this embodiment, the ICP etching method belonging to dry etching is used to pattern the semiconductor epitaxial stack 3 and the adhesive structure 2 to make the first The gap width w between the semiconductor epitaxial stack 31 and the second semiconductor epitaxial stack 32 is as small as possible to avoid waste caused by etching the semiconductor epitaxial stack 3 too much. The gap width w in this embodiment is between 1 μm and 10 μm, preferably 5 μm.

Next, as shown in FIG. 5F, a capturing element 103 is provided to bond with the adhesive medium 4 by heating, pressing, or using the viscosity of the capturing element 103 itself. The extraction element 103 includes a conductive material, such as a conductive substrate or a printed circuit board. The material of the conductive substrate includes silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), zinc oxide (ZnO), gallium nitride ( GaN), aluminum nitride (AlN) or one or a combination of metal materials; printed circuit boards include single-sided printed circuit boards, double-sided printed circuit boards, multilayer printed circuit boards or flexible circuit boards; or non-conductive materials, such as Sapphire, Diamond, Glass, Quartz, Acrylic, Zinc Oxide (ZnO), Aluminum Nitride (AlN), Lithium Aluminum Oxide (LiAlO2), Ceramic Substrate Or expanded polystyrene (EPS) tape, etc., when the extraction element 103 is formed with expanded polystyrene (EPS) tape, a rigid substrate can be provided for bonding with the expanded polystyrene (EPS) tape to Support the expanded polystyrene (EPS) tape to prevent the expanded polystyrene (EPS) tape from sticking to the surface 3011 of the second semiconductor epitaxial laminate 32.

In another embodiment, as shown in FIG. 11A, the capturing element 103 may further include a flexible substrate 1032 and a supporting structure 1031, wherein the material of the flexible substrate 1032 includes polyester resin (PET), polynaphthalene Dicarboxylate (polyethylene naphthalate; PEN) or polyimide (polyimide; PI), the material of the support structure 1031 includes sapphire (Sapphire), diamond (Diamond), glass (Glass), quartz (Quartz) or pressure A hard substrate such as Acryl is used to support the flexible substrate 1032.

In another embodiment, a patterned adhesive medium 4 may be formed on the extraction element 103 first, and the adhesive medium 4 may be aligned with the first semiconductor epitaxial stack 31 by using an alignment bonding technique. The bonding medium 4 and the first semiconductor epitaxial stack 31 are bonded by a gentle pressure method to form a structure as shown in FIG. 5F.

Next, as shown in FIG. 5G, the adhesive structure 2 is etched using a wet etching process or a vapor etching process, and the time of the wet etching process or vapor etching process is controlled to completely separate the first semiconductor epitaxial stack 31 from the bonding substrate 101, and A part of the adhesive structure 2 is left between the second semiconductor epitaxial stack 32 and the bonding substrate 101 to support the second semiconductor epitaxial stack 32.

In another embodiment, as the aforementioned capturing element 103 includes a flexible substrate 1032 and a supporting structure 1031, after the first semiconductor epitaxial stack 31 is separated from the sacrificial layer 201, as shown in FIG. 11B, the The flexible substrate 1032 is separated from the supporting structure 1031, and is further fabricated into a flexible display.

Sixth embodiment

6A to 6H are schematic diagrams of the structure of the sixth embodiment of the present invention. As shown in FIG. 6A, according to the optoelectronic semiconductor device manufacturing process disclosed in the present invention, a bonding substrate 101 has a surface 1011 and a surface 1012 corresponding to the surface 1011, and the bonding substrate 101 has at least one hole 110 penetrating from the surface 1011 to the surface 1012. The top view of the bonding substrate 101 is shown in FIG. 6B, where FIG. 6A is a cross-sectional view of the dotted line CC' in FIG. 6B. The material of the bonding substrate 101 includes an electrically insulating substrate or a conductive substrate, and the material of the electrically insulating substrate includes Sapphire, Diamond, Glass, Quartz, Acrylic, and Zinc Oxide (ZnO). ), aluminum nitride (AlN), lithium aluminum oxide (LiAlO2) or ceramic substrates, etc.; conductive substrate materials include silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), zinc oxide (ZnO), One or a combination of gallium nitride (GaN), aluminum nitride (AlN) or metal materials.

Next, as shown in FIG. 7C, a growth substrate 102 is provided, on the growth substrate 102 there is a semiconductor epitaxial stack 3 grown epitaxially, and then the semiconductor epitaxial stack 3 is bonded to the growth substrate 102 by an adhesive structure 2 The surface 1011 of the bonding substrate 101 is bonded to the bonding substrate 101, and the hole 110 exposes a part of the bonding structure 2. In this embodiment, the adhesive structure 2 can be first formed on the surface 3012 of the semiconductor epitaxial stack 3, and then the growth substrate 102 and the semiconductor epitaxial stack 3 are bonded to the surface 1011 of the bonded substrate 101 by the adhesive structure 2 Bonded with the bonding substrate 101.

The adhesive structure 2 has a thickness t, and the thickness t ranges from 1 μm to 10 μm, preferably between 2 μm to 6 μm. The material of the adhesive structure 2 includes organic materials, such as Acrylic acid, Unsaturated polyester, Epoxy, Oxetane, Vinyl ether , Nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS) ), polyvinyl chloride (PVC), benzocyclobutene (BCB), etc.; or inorganic materials, such as metals including titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al) , Germanium (Ge), copper (Cu) or a combination thereof, the oxides include indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide , Zinc oxide (ZnO), silicon oxide (SiOx), or nitride containing silicon nitride (SiNx), etc. The semiconductor epitaxial stack 3 includes at least a first semiconductor layer 301 having a first conductivity type, a conversion unit 302 and a second semiconductor layer 303 having a second conductivity type, which are sequentially formed on the growth substrate 102. The first semiconductor layer 301 and the second semiconductor layer 303 may have two single-layer structures or two multi-layer structures (a multi-layer structure refers to two or more layers). The first semiconductor layer 301 and the second semiconductor layer 303 have different conductivity types, electrical properties, polarities or doped elements to provide electrons or holes. When the first semiconductor layer 301 is a p-type semiconductor, the second semiconductor layer 303 can be an n-type semiconductor with different electrical properties. Conversely, when the first semiconductor layer 301 is an n-type semiconductor, the second semiconductor layer 303 can be a different electrical semiconductor. Sexual p-type semiconductor. The conversion unit 302 is formed between the first semiconductor layer 301 and the second semiconductor layer 303, and the conversion unit 302 converts or causes conversion between light energy and electric energy. The semiconductor epitaxial stack 3 can be further processed and applied to a semiconductor element, device, product, or circuit to perform or cause the mutual conversion of light energy and electric energy. Specifically, the semiconductor epitaxial stack 3 can be further processed into one of a light emitting diode (LED), a laser diode (LD), a solar cell or a liquid crystal display. Taking a light emitting diode as an example, the wavelength of the emitted light can be adjusted by changing the physical and chemical composition of one or more layers of the semiconductor epitaxial stack 3. Commonly used materials are aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, and zinc oxide (ZnO) series. The conversion unit 302 can be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well (MWQ). ). Specifically, the conversion unit 302 can be a neutral, p-type or n-type semiconductor. When a current is applied to the semiconductor epitaxial stack 3, the conversion unit 302 emits light. When the conversion unit 302 is based on aluminum indium gallium phosphide (AlGaInP), it will emit red, orange, and yellow amber light; when it is based on aluminum gallium indium nitride (AlGaInN), it will emit Blue or green light.

As shown in FIG. 6D, the growth substrate 102 is separated from the semiconductor epitaxial stack 3 and the surface 3011 of the semiconductor epitaxial stack 3 is exposed, and a support structure 5 is formed on the surface 1012 of the bonding substrate 101 and the wall surface of the hole 110 1101 and part of the adhesive structure 2 exposed from the hole 110. The method of separating the growth substrate 102 may include the method described in the aforementioned first embodiment. The material of the support structure 5 includes organic materials, such as ultraviolet light (UV) dissociation glue, such as acrylic acid, unsaturated polyester epoxy resin, epoxy resin, and oxetane (Oxetane), vinyl ether (Vinyl ether), etc.; thermoplastic plastics, such as nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate Ester (PC), acrylonitrile-butadiene-styrene (ABS), polyvinyl chloride (PVC), etc.; or inorganic materials, such as metals including titanium (Ti), gold (Au), beryllium (Be), tungsten ( W), aluminum (Al), germanium (Ge), or a combination thereof, the oxide includes silicon oxide (SiOx), or the nitride includes silicon nitride (SiNx).

As shown in FIG. 6E, a patterned adhesive medium 4 corresponding to the hole 110 is formed on the surface 3011 of the semiconductor epitaxial stack 3, and the method of forming the patterned adhesive medium 4 includes first forming a whole layer of the adhesive medium 4 On the surface 3011, a patterned adhesive medium 4 is formed by a yellow light lithography process or patterned etching. The yellow light lithography process and patterned etching are generally known semiconductor manufacturing processes. The material of the adhesive medium 4 includes organic materials, such as Acrylic acid, Unsaturated polyester, Epoxy, Oxetane, Vinyl ether , Nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS) ), polyvinyl chloride (PVC), etc.; or inorganic materials, such as metals including titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al), germanium (Ge), copper (Cu) ) Or a combination thereof, the oxide includes indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide, zinc oxide (ZnO), silicon oxide (SiOx), or the nitride contains silicon nitride (SiNx), etc.

As shown in FIG. 6F, the semiconductor epitaxial stack 3 and the adhesive structure 2 are patterned and the surface 1011 is exposed to form a plurality of semiconductor epitaxial stacks separated from each other, wherein the plurality of semiconductor epitaxial stacks includes at least one first A semiconductor epitaxial stack 31 and at least one second semiconductor epitaxial stack 32 have an adhesive medium 4 on each first semiconductor epitaxial stack 31, and a surface 3011 of each second semiconductor epitaxial stack 32 There is no adhesive medium 4 on the top, where the first semiconductor epitaxial stack 31 is on the hole 110, so the adhesive force between the first semiconductor epitaxial stack 31 and the bonding substrate 101 is less than that between the second semiconductor epitaxial stack 32 and the second semiconductor epitaxial stack. Adhesion between the bonding substrates 101. The method of patterning the semiconductor epitaxial stack 3 and the adhesive structure 2 includes dry etching or wet etching. In this embodiment, dry etching is used to make the first semiconductor epitaxial stack 31 and the second semiconductor epitaxial stack 32 The gap width w between the gaps is as small as possible to avoid waste due to excessive etching of the semiconductor epitaxial stack 3. The gap width w in this embodiment is between 1 μm and 10 μm, and preferably 5 μm.

Next, as shown in FIG. 6G, a capturing element 103 is provided to bond with the adhesive medium 4 by heating, pressing, or using the viscosity of the capturing element 103 itself. The extraction element 103 includes a conductive material, such as a conductive substrate or a printed circuit board. The material of the conductive substrate includes silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), zinc oxide (ZnO), gallium nitride ( GaN), aluminum nitride (AlN) or one or a combination of metal materials; printed circuit boards include single-sided printed circuit boards, double-sided printed circuit boards, multilayer printed circuit boards or flexible circuit boards; or non-conductive materials, such as Sapphire, Diamond, Glass, Quartz, Acrylic, Zinc Oxide (ZnO), Aluminum Nitride (AlN), Lithium Aluminum Oxide (LiAlO2), Ceramic Substrate Or expanded polystyrene (EPS) tape, etc., when the extraction element 103 is formed with expanded polystyrene (EPS) tape, a rigid substrate can be provided for bonding with the expanded polystyrene (EPS) tape to Support the expanded polystyrene (EPS) tape to prevent the expanded polystyrene (EPS) tape from sticking to the surface 3011 of the second semiconductor epitaxial laminate 32.

In another embodiment, as shown in FIG. 11A, the capturing element 103 may further include a flexible substrate 1032 and a supporting structure 1031, wherein the material of the flexible substrate 1032 includes polyester resin (PET), polynaphthalene Polyethylene naphthalate (PEN) or polyimide (PI), the material of the support structure includes sapphire (Sapphire), diamond (Diamond), glass (Glass), quartz (Quartz) or acrylic A hard substrate such as Acryl is used to support the flexible substrate 1032.

In another embodiment, a patterned adhesive medium 4 may be formed on the extraction element 103 first, and the adhesive medium 4 may be aligned with the first semiconductor epitaxial stack 31 by using an alignment bonding technique. The bonding medium 4 and the first semiconductor epitaxial stack 31 are bonded by a gentle pressure method.

As shown in Figure 6H, when the material of the support structure 5 is a metal material, such as titanium (Ti), aluminum (Al), titanium tungsten (TiW), silver (Ag), etc., or a material containing silicon, such as silicon oxide (SiOx), silicon nitride (SiNx) or poly-Si (poly-Si), etc., can be wet etching or vapor etching to remove the support structure 5, and then apply forces in opposite directions to the extraction element 103 and The substrate 101 is bonded to separate the first semiconductor epitaxial stack 31 and the sacrificial layer 201. In this embodiment, the etching solution used for wet etching includes hydrofluoric acid, and the chemical material used for vapor etching includes hydrogen fluoride (HF) vapor. If the material of the support structure 5 is ultraviolet light (UV) dissociative material, such as acrylic acid, unsaturated polyester, epoxy, and oxetane , Vinyl ether, etc., using ultraviolet light (UV) to irradiate the support structure 5 can reduce or disappear the adhesion between the support structure 5 and the adhesive structure 2, and then apply forces in the opposite direction to the capture element 103 And the bonding substrate 101 to separate the first semiconductor epitaxial stack 31 from the support structure 5; if the material of the support structure 5 is thermoplastic, such as nylon (Nylon), polypropylene (PP), polybutylene terephthalate Alcohol ester (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS), polyvinyl chloride (PVC), etc., heating the support structure 5 can make the support structure 5 The adhesive force with the adhesive structure 2 decreases or disappears, and then forces in opposite directions are applied to the capture element 103 and the bonding substrate 101 respectively, so that the first semiconductor epitaxial stack 31 and the support structure 5 are separated.

In another embodiment, as the aforementioned capturing element 103 includes a flexible substrate 1032 and a supporting structure 1031, after the first semiconductor epitaxial stack 31 is separated from the sacrificial layer 201, as shown in FIG. 11B, the The flexible substrate 1032 is separated from the supporting structure 1031, and is further fabricated into a flexible display.

Seventh embodiment

FIG. 7A to FIG. 7F are schematic diagrams of the corresponding structure in each step of the manufacturing method according to the seventh embodiment of the present invention. The difference between this embodiment and the foregoing second embodiment is that the bonding substrate 101 has a plurality of holes 120 corresponding to each first semiconductor epitaxial stack 31, so that the adhesion between the first semiconductor epitaxial stack 31 and the bonding substrate 101 Compared with the second embodiment, the adhesion force between the first semiconductor epitaxial stack 31 and the bonding substrate 101 is lower, so as to increase the probability of using mechanical force to separate the first semiconductor epitaxial stack 31 and the bonding substrate 101; or, When the sacrificial layer 201 is removed by wet etching or vapor etching, the etching solution contains hydrofluoric acid or the chemical material used for vapor etching contains hydrogen fluoride (HF) vapor. The sacrificial layer 201 can be etched through a plurality of holes 120 to reduce the time required for etching .

Eighth embodiment

Fig. 8A to Fig. 8F are schematic diagrams of the corresponding structure in each step of the manufacturing method according to the eighth embodiment of the present invention. The difference between this embodiment and the aforementioned seventh embodiment is that the adhesive structure 2 does not include a sacrificial layer, and the adhesive substrate 101 has a plurality of holes 120 corresponding to each first semiconductor epitaxial stack 31, so that the first semiconductor epitaxial stack 31 The adhesion with the bonding substrate 101 is lower than the adhesion between the second semiconductor epitaxial stack 32 and the bonding substrate 101, and mechanical force can be used to separate the first semiconductor epitaxial stack 31 and the bonding substrate 101.

Ninth embodiment

9A to 9I are schematic diagrams of the corresponding structure in each step of the manufacturing method according to the ninth embodiment of the present invention. Referring to FIG. 9A, a growth substrate 102 is provided with a surface 1021 for subsequent growth of a semiconductor stack. The materials constituting the growth substrate 102 include but are not limited to germanium (Ge), gallium arsenide (GaAs), and indium phosphide (InP) , Gallium phosphide (GaP), sapphire (sapphire), silicon carbide (SiC), silicon (Si), lithium aluminum oxide (LiAlO2), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN) ) Or a combination thereof. A patterned sacrificial layer 601 is formed on the surface 1021 of the growth substrate 102. The material of the sacrificial layer 601 includes semiconductor materials, such as aluminum arsenide (AlAs) or aluminum nitride (AlN), or oxides, such as silicon oxide (SiOx). ), where, if the material of the patterned sacrificial layer 601 is aluminum arsenide (AlAs) or aluminum nitride (AlN), the method of formation includes growing by a metal organic chemical vapor deposition (MOCVD) method, and then patterning Formed by chemical etching; if the material of the patterned sacrificial layer 601 is silicon oxide (SiOx), the method of formation includes physical vapor deposition (PVD) or chemical vapor deposition (CVD) on the growth substrate On 102, it is formed by patterning etching.

As shown in FIG. 9B, a semiconductor layer 304 is formed on the surface 1021 of the growth substrate 102 and covers the patterned sacrificial layer 601. The material of the semiconductor layer 304 is different from the sacrificial layer 601. The semiconductor layer 304 may include a transition layer (not shown) or a window layer (not shown). The transition layer can be used as a buffer layer between the growth substrate 102 and the window layer, or between the growth substrate 102 and the semiconductor epitaxial stack 3 formed later. In the structure of the light-emitting diode, the transition layer is to reduce the lattice mismatch between the two layers of materials. On the other hand, the transition layer can be a single layer, a multilayer, a combination of two materials, or a two-separated structure, and the material of the transition layer can be any one of an organic metal, an inorganic metal, or a semiconductor. The transition layer can also be used as a reflective layer, a heat conduction layer, an electrical conduction layer, an ohmic contact layer, an anti-deformation layer, a stress release layer, a stress adjustment layer, a bonding layer, a wavelength conversion layer, or a fixed structure. The window layer is a semiconductor layer with a large thickness, which can improve the light extraction efficiency of the semiconductor epitaxial stack 3 and increase the effect of lateral current spreading. The material includes at least one element selected from aluminum (Al), The group consisting of gallium (Ga), indium (In), arsenic (As), phosphorus (P) and nitrogen (N), or a combination thereof, such as a semiconductor compound of GaN or AlGaInP.

As shown in FIG. 9C, the semiconductor epitaxial stack 3 is continuously formed on the semiconductor layer 304. The semiconductor epitaxial stack 3 includes at least one first semiconductor layer 301 having a first conductivity type, a conversion unit 302, and A second semiconductor layer 303 has the second conductivity type and is sequentially formed on the growth substrate 102. The first semiconductor layer 301 and the second semiconductor layer 303 may have two single-layer structures or two multi-layer structures (a multi-layer structure refers to two or more layers). The first semiconductor layer 301 and the second semiconductor layer 303 have different conductivity types, electrical properties, polarities or doped elements to provide electrons or holes. When the first semiconductor layer 301 is a p-type semiconductor, the second semiconductor layer 303 can be an n-type semiconductor with different electrical properties. Conversely, when the first semiconductor layer 301 is an n-type semiconductor, the second semiconductor layer 303 can be a different electrical semiconductor. Sexual p-type semiconductor. The conversion unit 302 is formed between the first semiconductor layer 301 and the second semiconductor layer 303, and the conversion unit 302 converts or causes conversion between light energy and electric energy. The semiconductor epitaxial stack 3 can be further processed and applied to a semiconductor element, device, product, or circuit to perform or cause the mutual conversion of light energy and electric energy. Specifically, the semiconductor epitaxial stack 3 can be further processed into one of a light emitting diode (LED), a laser diode (LD), a solar cell or a liquid crystal display. Taking a light emitting diode as an example, the wavelength of the emitted light can be adjusted by changing the physical and chemical composition of one or more layers of the semiconductor epitaxial stack 3. Commonly used materials are aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, and zinc oxide (ZnO) series. The conversion unit 302 can be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well (MWQ). ). Specifically, the conversion unit 302 can be a neutral, p-type or n-type semiconductor. When a current is applied to the semiconductor epitaxial stack 3, the conversion unit 302 emits light. When the conversion unit 302 is based on aluminum indium gallium phosphide (AlGaInP), it will emit red, orange, and yellow amber light; when it is based on aluminum gallium indium nitride (AlGaInN), it will emit Blue or green light.

Next, as shown in FIG. 9D, a patterned adhesive medium 4 corresponding to the patterned sacrificial layer 601 is formed on the surface 3011 of the semiconductor epitaxial stack 3, wherein the method of forming the patterned adhesive medium 4 includes first forming a whole The adhesive medium 4 of the layer is on the surface 3011, and then a patterned adhesive medium 4 is formed by a yellow light lithography process or patterned etching. The yellow light lithography process and patterned etching are generally known semiconductor processes. The material of the adhesive medium 4 includes organic materials, such as Acrylic acid, Unsaturated polyester, Epoxy, Oxetane, Vinyl ether , Nylon (Nylon), polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene ether (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS) ), polyvinyl chloride (PVC), benzocyclobutene (BCB), etc.; or inorganic materials, such as metals including titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al) , Germanium (Ge), copper (Cu) or a combination thereof, the oxides include indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide , Zinc oxide (ZnO), silicon oxide (SiOx), or nitride containing silicon nitride (SiNx), etc.

Next, as shown in FIG. 9E, the semiconductor epitaxial stack 3 and the semiconductor layer 304 are patterned and the surface 1021 of the growth substrate 102 is exposed to form a plurality of semiconductor epitaxial stacks spaced apart from each other, wherein a plurality of semiconductor epitaxial stacks It includes at least one first semiconductor epitaxial stack 31 and at least one second semiconductor epitaxial stack 32, each first semiconductor epitaxial stack 31 has an adhesive medium 4, and each second semiconductor epitaxial stack There is no adhesive medium 4 on the surface 3011 of 32. The method of patterning the semiconductor epitaxial stack 3 and the adhesive structure 2 includes dry etching or wet etching. In this embodiment, dry etching is used to make the first semiconductor epitaxial stack 31 and the second semiconductor epitaxial stack 32 The gap width w between the gaps is as small as possible to avoid waste due to excessive etching of the semiconductor epitaxial stack 3. The gap width w in this embodiment is between 1 μm and 10 μm, and preferably 5 μm. In this embodiment, since there is a sacrificial layer 601 between the first semiconductor epitaxial stack 31 and the growth substrate 102, and the second semiconductor epitaxial stack 32 is directly grown on the growth substrate 102, the epitaxy of the semiconductor layer 304 is controlled. The parameter conditions of the crystallization process, or the use of the material properties of the sacrificial layer 601 and the semiconductor layer 304, for example, the material of the sacrificial layer 601 is oxide, so that the adhesion between the semiconductor layer 304 and the sacrificial layer 601 is smaller than the semiconductor layer 304 and the growth Adhesion between the substrates 102.

Next, as shown in FIG. 9F, a capturing element 103 is provided to bond with the adhesive medium 4 by heating, pressurizing, or using the viscosity of the capturing element 103 itself. The extraction element 103 includes a conductive material, such as a conductive substrate or a printed circuit board. The material of the conductive substrate includes silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), zinc oxide (ZnO), gallium nitride ( GaN), aluminum nitride (AlN) or one or a combination of metal materials; printed circuit boards include single-sided printed circuit boards, double-sided printed circuit boards, multilayer printed circuit boards or flexible circuit boards; or non-conductive materials, such as Sapphire, Diamond, Glass, Quartz, Acrylic, Zinc Oxide (ZnO), Aluminum Nitride (AlN), Lithium Aluminum Oxide (LiAlO2), Ceramic Substrate Or expanded polystyrene (EPS) tape, etc.

In another embodiment, as shown in FIG. 11A, the capturing element 103 may further include a flexible substrate 1032 and a supporting structure 1031, wherein the material of the flexible substrate 1032 includes polyester resin (PET), polynaphthalene Polyethylene naphthalate (PEN) or polyimide (PI), the material of the support structure includes sapphire (Sapphire), diamond (Diamond), glass (Glass), quartz (Quartz) or acrylic A hard substrate such as Acryl is used to support the flexible substrate 1032.

In another embodiment, a patterned adhesive medium 4 may be formed on the extraction element 103 first, and the adhesive medium 4 may be aligned with the first semiconductor epitaxial stack 31 by using an alignment bonding technique. The bonding medium 4 and the first semiconductor epitaxial stack 31 are bonded by a gentle pressure method.

As shown in Figure 9G, if the sacrificial layer 601 is oxide (SiOx) or aluminum arsenide (AlAs), wet etching or vapor etching can be used to remove the sacrificial layer 601, and then apply forces in the opposite direction. In the extraction element 103 and the growth substrate 102, the first semiconductor epitaxial stack 31 is separated from the sacrificial layer 601. In this embodiment, the etching solution used for wet etching includes hydrofluoric acid, and the chemical material used for vapor etching includes hydrogen fluoride ( HF) Steam. Or as shown in FIG. 9H and FIG. 9I, when the material of the sacrificial layer 601 is a non-semiconductor material, such as oxide (SiOx), the temperature and pressure in the lateral epitaxial phase of the semiconductor layer 304 epitaxial process are controlled, such as controlling The temperature is between 1000°C and 1100°C and the pressure is between 400mbr and 600mbar. A void 602 is formed between the semiconductor layer 304 and the sacrificial layer 601, so that the contact area between the semiconductor layer 304 and the sacrificial layer 601 is reduced. At this time, a force in the opposite direction can be applied to the extraction device 103 and the growth substrate 102 to directly separate the first semiconductor epitaxial stack 31 and the sacrificial layer 601.

In another embodiment, as shown in FIG. 11A, the capturing element 103 may further include a flexible substrate 1032 and a supporting structure 1031, wherein the material of the flexible substrate 1032 includes polyester resin (PET), polynaphthalene Polyethylene naphthalate (PEN) or polyimide (PI), the material of the support structure includes sapphire (Sapphire), diamond (Diamond), glass (Glass), quartz (Quartz) or acrylic A hard substrate such as Acryl is used to support the flexible substrate 1032.

Tenth embodiment

FIG. 10A to FIG. 10C are schematic diagrams of the corresponding structure in each step of the manufacturing method according to the tenth embodiment of the present invention. As shown in FIGS. 10A to 10C, the difference between the tenth embodiment and the aforementioned ninth embodiment is that the adhesive medium 4 is located on the second semiconductor epitaxial stack 32, and the first semiconductor epitaxial stack 31 exposes the surface 3011. As shown in FIG. 10C, when the material of the semiconductor layer 304 is gallium nitride (GaN), the material of the sacrificial layer 601 is aluminum nitride (AlN), and the growth substrate 102 is a transparent substrate, a laser light 7 can be used from The other surface 1022 of the growth substrate 102 is incident to illuminate the semiconductor layer 304 and the sacrificial layer 601, in which the energy of the laser light 7 is greater than the energy gap of gallium nitride (GaN) and less than the energy gap of aluminum nitride (AlN). To separate the semiconductor layer 304 and the growth substrate 102 in each second semiconductor epitaxial stack 32, and then apply a force in the opposite direction to the capture element 103 and the growth substrate 102 to separate the second semiconductor epitaxial stack 32 and the growth substrate 102. Growth substrate 102.

Fig. 1A to Fig. 1I are schematic diagrams of the corresponding structure in each step of the manufacturing method according to the first embodiment of the present invention;

Figures 2A to 2H are schematic diagrams of the corresponding structures in each step of the manufacturing method according to the second embodiment of the present invention;

Figures 3A to 3H are schematic diagrams of the corresponding structures in each step of the manufacturing method according to the third embodiment of the present invention;

4A to 4C are schematic diagrams of the structure according to the fourth embodiment of the present invention;

FIG. 5A to FIG. 5G are schematic diagrams of the structure according to the fifth embodiment of the present invention;

Fig. 6A to Fig. 6H are schematic diagrams of the structure according to the sixth embodiment of the present invention;

Figures 7A to 7F are schematic diagrams of the structure according to the seventh embodiment of the present invention;

8A to 8F are schematic diagrams of the corresponding structures in each step of the manufacturing method according to the eighth embodiment of the present invention;

9A to 9I are schematic diagrams of the corresponding structures in each step of the manufacturing method according to the ninth embodiment of the present invention;

10A to 10C are schematic diagrams of the corresponding structures in each step of the manufacturing method according to the tenth embodiment of the present invention;

FIG. 11A to FIG. 11B are schematic diagrams of the corresponding structure in each step of the manufacturing method according to an embodiment of the present invention.

101‧‧‧Bonding substrate

3011‧‧‧surface

1011‧‧‧surface

3012‧‧‧surface

1012‧‧‧surface

302‧‧‧Conversion unit

102‧‧‧Growth substrate

303‧‧‧Second semiconductor layer

1022‧‧‧surface

304‧‧‧Semiconductor layer

103‧‧‧Fetching components

3031‧‧‧surface

1031‧‧‧Supporting structure

31‧‧‧The first semiconductor epitaxial stack

1032‧‧‧Flexible substrate

311‧‧‧surface

110‧‧‧Hole

32‧‧‧Second semiconductor epitaxial stack

1101‧‧‧Wall

4‧‧‧Adhesive medium

120‧‧‧Hole

5‧‧‧Supporting structure

2‧‧‧Adhesive structure

601‧‧‧Sacrifice layer

202‧‧‧Adhesive layer

7‧‧‧Laser light

201‧‧‧Sacrifice layer

t‧‧‧Thickness

3‧‧‧Semiconductor epitaxial stack

w‧‧‧Interval width

301‧‧‧First semiconductor layer

31‧‧‧The first semiconductor epitaxial stack

101‧‧‧Bonding substrate

32‧‧‧Second semiconductor epitaxial stack

103‧‧‧Fetching components

201‧‧‧Sacrifice layer

4‧‧‧Adhesive medium

202‧‧‧Adhesive layer

Claims (9)

A semiconductor device includes: a substrate; an adhesion layer directly in contact with the substrate and having a first surface, the first surface having a first width; and a semiconductor element formed on the adhesion layer and including a conversion unit , The conversion unit has a second width; wherein the first width is smaller than the second width, and the semiconductor element has a second surface in direct contact with the first surface. According to the semiconductor device described in claim 1, wherein the bonding layer has a thickness between 1 μm and 10 μm. The semiconductor device according to claim 1, wherein the bonding layer has a third width not less than the second width. The semiconductor device according to claim 1, wherein the semiconductor device further includes a semiconductor layer, and the semiconductor layer has a third width greater than the first width. The semiconductor device described in claim 1, wherein the material of the bonding layer includes benzocyclobutene (BCB). The semiconductor device described in item 1 of the scope of the patent application further includes: a flexible substrate connected to the semiconductor element; and an adhesive medium located between the flexible substrate and the semiconductor element. According to the semiconductor device described in claim 1, the second surface includes a central area and a surrounding area surrounding the central area, and the first surface only directly contacts the central area. The semiconductor device described in item 1 of the scope of the patent application further comprises a flexible substrate connected to the semiconductor element, wherein the flexible substrate comprises polyester resin, polyethylene naphthalate or polyimide. A semiconductor device includes: a substrate having a first surface; a first semiconductor epitaxial stack is located on the first surface and has a surface opposite to the first surface; a second semiconductor epitaxial stack is located on the first surface On a surface; and a bonding structure located between the first surface, the first semiconductor epitaxial stack and the second semiconductor epitaxial stack, and is connected to the substrate, the first semiconductor epitaxial stack and the second Two semiconductor epitaxial stacks are in direct contact; wherein, the bonding structure includes a bonding layer and a sacrificial layer, the surface is in contact with the bonding layer and the sacrificial layer, and the first semiconductor epitaxial stack is connected to the second semiconductor There is a gap width between 1 μm and 10 μm between the epitaxial stacks.

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