TWI689367B - Generation method of gallium nitride substrate - Google Patents

Generation method of gallium nitride substrate Download PDF

Info

Publication number
TWI689367B
TWI689367B TW105125168A TW105125168A TWI689367B TW I689367 B TWI689367 B TW I689367B TW 105125168 A TW105125168 A TW 105125168A TW 105125168 A TW105125168 A TW 105125168A TW I689367 B TWI689367 B TW I689367B
Authority
TW
Taiwan
Prior art keywords
gallium nitride
gan
holding member
ingot
gallium
Prior art date
Application number
TW105125168A
Other languages
Chinese (zh)
Other versions
TW201713448A (en
Inventor
平田和也
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=58391371&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI689367(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201713448A publication Critical patent/TW201713448A/en
Application granted granted Critical
Publication of TWI689367B publication Critical patent/TWI689367B/en

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/1033—Gallium nitride [GaN]

Abstract

本發明係一種氮化鎵基板之生成方法，其課題為提供：未出現浪費，而可自氮化鎵(GaN)錠塊生成多量之氮化鎵基板的氮化鎵基板之生成方法。 The present invention is a method of generating a gallium nitride substrate, and its subject is to provide a method of generating a gallium nitride substrate that can generate a large amount of gallium nitride substrate from a gallium nitride (GaN) ingot without waste.

解決手段係將具有第1面，和與第1面相反側的第2面之氮化鎵(GaN)錠塊，生成為複數之氮化鎵基板的氮化鎵基板之生成方法，其中，包含：將對於氮化鎵(GaN)而言具有透過性之波長的雷射光線之集光點，自第1面定位於氮化鎵(GaN)錠塊之內部而進行照射，破壞氮化鎵(GaN)而形成使鎵(Ga)與氮(N)析出之界面的界面形成工程，和於氮化鎵(GaN)錠塊之第1面，貼著第1保持構件之同時，於第2面，貼著第2保持構件的保持構件貼著工程，和將氮化鎵(GaN)錠塊，加熱至鎵(Ga)產生熔融之溫度同時，經由移動於相互背離第1保持構件與第2保持構件之方向而自界面分離氮化鎵(GaN)錠塊，生成氮化鎵基板之氮化鎵基板生成工程。 The solution is a method of generating a gallium nitride substrate having a first surface and a second surface opposite to the first surface of a gallium nitride (GaN) ingot as a plurality of gallium nitride substrates, including : Illuminate the collection point of laser light with a wavelength that is transparent to gallium nitride (GaN) from the first surface and irradiate the gallium nitride (GaN) ingot to destroy the gallium nitride ( GaN) to form an interface for the precipitation of gallium (Ga) and nitrogen (N), and on the first surface of the gallium nitride (GaN) ingot, while attaching the first holding member, on the second surface , The holding member is attached to the second holding member, and the gallium nitride (GaN) ingot is heated to a temperature at which gallium (Ga) melts, while moving away from the first holding member and the second holding member A gallium nitride substrate generation process that separates gallium nitride (GaN) ingots from the interface in the direction of the component to produce a gallium nitride substrate.

Description

氮化鎵基板之生成方法 Generation method of gallium nitride substrate

本發明係有關自氮化鎵(GaN)錠塊，生成具有特定厚度之氮化鎵基板的氮化鎵基板之生成方法。 The invention relates to a method for generating a gallium nitride substrate from a gallium nitride (GaN) ingot to generate a gallium nitride substrate with a specific thickness.

氮化鎵(GaN)係從比較於矽，能帶隙為3倍寬，而絕緣破壞電壓亦高之情況，作為電力控制用的半導體元件(功率裝置)而加以利用。例如，於氮化鎵基板的上面，經由加以配列成格子狀之複數的分割預定線所區隔之複數範圍，加以形成有功率裝置之功率裝置晶圓，係沿著分割預定線而加以分割成各個功率裝置，而加以使用於電腦，汽車等之控制之裝置。 Gallium nitride (GaN) is used as a semiconductor element (power device) for power control from the case where the band gap is three times wider than silicon and the breakdown voltage is also high. For example, on the upper surface of the gallium nitride substrate, a power device wafer with a power device formed by dividing a plurality of predetermined division lines arranged in a grid into a plurality of ranges is divided along the predetermined division line into Each power device is used to control computers, automobiles, etc.

構成上述之功率裝置晶圓的氮化鎵基板係由線鋸而切割氮化鎵(GaN)錠塊，再研磨所切割之氮化鎵基板的表背面而加工成鏡面(例如，參照專利文獻1)。 The gallium nitride substrate constituting the power device wafer described above is cut by a wire saw to gallium nitride (GaN) ingots, and then the front and back surfaces of the cut gallium nitride substrate are polished to be processed into a mirror surface (for example, see Patent Document 1 ).

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2000-94221號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2000-94221

然而，對於氮化鎵(GaN)錠塊之製造，係需要相當的設備與時間之故，例如直徑為100mm，厚度為3mm之氮化鎵(GaN)錠塊係儘管為日幣數百萬元之高價，當以線鋸切割時，成為作為切削屑而加以捨棄氮化鎵(GaN)錠塊之60~70%，而不經濟之同時亦有生產性差的問題。 However, the manufacture of gallium nitride (GaN) ingots requires considerable equipment and time. For example, a gallium nitride (GaN) ingot with a diameter of 100 mm and a thickness of 3 mm is a few million yen. The high price, when cutting with a wire saw, becomes 60 to 70% of the gallium nitride (GaN) ingots as cutting chips, which is not economical and has the problem of poor productivity.

本發明係有鑑於上述情事所作為之構成，而其主要技術的課題係提供：未出現浪費，而可自氮化鎵(GaN)錠塊生成多量之氮化鎵基板的氮化鎵基板之生成方法者。 The present invention is structured in view of the above circumstances, and its main technical subject is to provide: generation of gallium nitride substrates that can generate a large amount of gallium nitride substrates from gallium nitride (GaN) ingots without waste Methodist.

為了解決上述主要之技術課題，如根據本發明，係將具有第1面，和與該第1面相反側的第2面之氮化鎵(GaN)錠塊，生成為複數之氮化鎵基板的氮化鎵基板之生成方法，其特徵為加以提供包含： 將對於氮化鎵(GaN)而言具有透過性之波長的雷射光線之集光點，自該第1面定位於氮化鎵(GaN)錠塊之內部而進行照射，破壞氮化鎵(GaN)而形成使鎵(Ga)與氮(N)析出之界面的界面形成工程， 和於氮化鎵(GaN)錠塊之該第1面，貼著第1保持構 件之同時，於該第2面，貼著第2保持構件的保持構件貼著工程，和將氮化鎵(GaN)錠塊，加熱至鎵(Ga)產生熔融之溫度同時，經由移動於相互背離該第1保持構件與該第2保持構件之方向而自該界面分離氮化鎵(GaN)錠塊，生成氮化鎵基板之氮化鎵基板生成工程之氮化鎵基板之生成方法。 In order to solve the above-mentioned main technical problems, according to the present invention, a gallium nitride (GaN) ingot having a first surface and a second surface opposite to the first surface is formed into a plurality of gallium nitride substrates The production method of the gallium nitride substrate is characterized by providing: The focal point of laser light of a wavelength that is transparent to gallium nitride (GaN) is positioned inside the gallium nitride (GaN) ingot from the first surface and irradiated to destroy the gallium nitride ( GaN) to form an interface forming interface between gallium (Ga) and nitrogen (N), On the first surface of the gallium nitride (GaN) ingot, attached to the first holding structure At the same time, on the second surface, the holding member is attached to the second holding member, and the gallium nitride (GaN) ingot is heated to the temperature at which the gallium (Ga) melts, while moving through A method of forming a gallium nitride substrate in a gallium nitride substrate production process of separating a gallium nitride (GaN) ingot from the interface away from the direction of the first holding member and the second holding member to produce a gallium nitride substrate.

在上述保持構件貼著工程之第2保持構件，係在實施上述界面形成工程之前，貼著於第2面。 The second holding member of the holding member attachment process is attached to the second surface before performing the interface forming process.

上述保持構件貼著工程，係使用以較鎵(Ga)產生熔融之溫度為高的溫度而熔融氮化鎵(GaN)錠塊的蠟，於第1面，貼著第1保持構件之同時，於第2面，貼著第2保持構件。 The above-mentioned holding member attaching process uses a wax that melts a gallium nitride (GaN) ingot at a temperature higher than the temperature at which gallium (Ga) is melted, while attaching the first holding member to the first surface, The second holding member is attached to the second surface.

實施研削形成於析出於上述界面，藉由氮化鎵基板形成工程所分離之氮化鎵基板之分離面的鎵(Ga)面而除去之研削工程。 The grinding process is performed by removing the gallium (Ga) surface of the separation surface of the gallium nitride substrate separated by the gallium nitride substrate formation process from the above interface.

經由本發明之氮化鎵基板的生成方法係因包含：將對於氮化鎵(GaN)而言具有透過性之波長的雷射光線之集光點，自第1面定位於氮化鎵(GaN)錠塊之內部而進行照射，破壞氮化鎵(GaN)而形成使鎵(Ga)與氮(N)析出之界面的界面形成工程，和於氮化鎵(GaN)錠塊之該第1面，貼著第1保持構件之同時，於該第2面，貼著第2保 持構件的保持構件貼著工程，和將氮化鎵(GaN)錠塊，加熱至鎵(Ga)產生熔融之溫度同時，經由移動於相互背離第1保持構件與第2保持構件之方向而自界面分離氮化鎵(GaN)錠塊，生成氮化鎵基板之氮化鎵基板生成工程之故，可經由於氮化鎵(GaN)錠塊之內部，形成破壞氮化鎵(GaN)而使鎵(Ga)與氮(N)析出之界面之時，而生成氮化鎵基板之故，成為如以往，皆無經由以線鋸進行切割而捨棄之切削屑。隨之，未有浪費氮化鎵(GaN)錠塊而可生成於氮化鎵基板，而比較於以線鋸進行切割之以往的加工方法，生產性則提升2.5倍。 The method for forming a gallium nitride substrate according to the present invention includes: positioning a collection point of laser light of a wavelength that is transparent to gallium nitride (GaN) from the first surface to gallium nitride (GaN) ) The inside of the ingot is irradiated to destroy the gallium nitride (GaN) to form an interface forming interface between gallium (Ga) and nitrogen (N), and the first in the gallium nitride (GaN) ingot Surface, while attaching the first holding member, on the second surface, attaching the second The holding member of the holding member is attached to the project, and the gallium nitride (GaN) ingot is heated to a temperature at which gallium (Ga) melts, while moving away from the first holding member and the second holding member The gallium nitride (GaN) ingot is separated from the interface to form a gallium nitride substrate. Therefore, the gallium nitride (GaN) ingot can be formed by destroying the gallium nitride (GaN) inside the gallium nitride (GaN) ingot. When the interface between gallium (Ga) and nitrogen (N) is precipitated, the gallium nitride substrate is generated. As in the past, there is no cutting chip discarded by cutting with a wire saw. As a result, gallium nitride (GaN) ingots are not wasted and can be generated on the gallium nitride substrate. Compared with the conventional processing method of cutting with a wire saw, productivity is improved by 2.5 times.

2‧‧‧氮化鎵(GaN)錠塊 2‧‧‧Gallium nitride (GaN) ingot

20‧‧‧氮化鎵基板 20‧‧‧GaN substrate

3‧‧‧雷射加工裝置 3‧‧‧Laser processing device

31‧‧‧雷射加工裝置之夾盤 31‧‧‧Chuck for laser processing device

32‧‧‧雷射光線照射手段 32‧‧‧Laser light irradiation means

322‧‧‧集光器 322‧‧‧Concentrator

4‧‧‧第1保持構件 4‧‧‧First holding member

5‧‧‧第2保持構件 5‧‧‧Second holding member

6‧‧‧蠟 6‧‧‧wax

7‧‧‧研削裝置 7‧‧‧ Grinding device

71‧‧‧研削裝置之夾盤 71‧‧‧Chuck for grinding device

72‧‧‧研削手段 72‧‧‧ Grinding method

8‧‧‧剝離裝置 8‧‧‧Stripping device

81‧‧‧保持台 81‧‧‧Retainer

82‧‧‧吸引墊 82‧‧‧Attraction pad

圖1係經由本發明之氮化鎵基板的生成方法所加工之氮化鎵(GaN)錠塊的斜視圖。 FIG. 1 is a perspective view of a gallium nitride (GaN) ingot processed by the method for producing a gallium nitride substrate of the present invention.

圖2係為了實施在經由本發明之氮化鎵基板的生成方法之界面形成工程的雷射加工裝置之要部斜視圖。 FIG. 2 is a perspective view of an essential part of a laser processing apparatus for implementing an interface formation process through the method for forming a gallium nitride substrate of the present invention.

圖3係在經由本發明之氮化鎵基板的生成方法之界面形成工程的說明圖。 FIG. 3 is an explanatory diagram of an interface formation process through the method for producing a gallium nitride substrate of the present invention.

圖4係加以實施在經由本發明之氮化鎵基板的生成方法之界面形成工程之其他實施形態之氮化鎵(GaN)錠塊的平面圖。 FIG. 4 is a plan view of a gallium nitride (GaN) ingot of another embodiment implemented in an interface formation process through the method of forming a gallium nitride substrate of the present invention.

圖5係在經由本發明之氮化鎵基板的生成方法之保持構件貼著工程的說明圖。 FIG. 5 is an explanatory diagram of the attachment process of the holding member via the method for producing a gallium nitride substrate of the present invention.

圖6係在經由本發明之氮化鎵基板的生成方法之保持構件分離工程的說明圖。 6 is an explanatory diagram of a separation process of a holding member via the method for producing a gallium nitride substrate of the present invention.

圖7係顯示在經由本發明之氮化鎵基板的生成方法之研削工程的第1實施形態的說明圖。 7 is an explanatory diagram showing the first embodiment of the grinding process through the method for producing a gallium nitride substrate of the present invention.

圖8係顯示在經由本發明之氮化鎵基板的生成方法之研削工程的第2實施形態的說明圖。 FIG. 8 is an explanatory diagram showing a second embodiment of the grinding process via the method for producing a gallium nitride substrate of the present invention.

圖9係在經由本發明之氮化鎵基板的生成方法之保持構件分離工程的說明圖。 9 is an explanatory diagram of a separation process of a holding member via the method for producing a gallium nitride substrate of the present invention.

以下，對於經由本發明之氮化鎵基板的生成方法，參照附加圖面而更加以詳細說明。 Hereinafter, the method of generating the gallium nitride substrate via the present invention will be described in more detail with reference to the attached drawings.

對於圖1係加以顯示經由本發明之氮化鎵基板的生成方法所加工之氮化鎵(GaN)錠塊的斜視圖。圖1所示之氮化鎵(GaN)錠塊2係加以形成為直徑為100mm而厚度為3mm。此氮化鎵(GaN)錠塊2係具有加以形成於對於軸心而言垂直的面之第1面21，和與該第1面21相反側的第2面22。另外，對於氮化鎵(GaN)錠塊2之外周，係加以形成有成為加工基準面之平面23。 FIG. 1 is a perspective view showing a gallium nitride (GaN) ingot processed by the method for producing a gallium nitride substrate of the present invention. The gallium nitride (GaN) ingot 2 shown in FIG. 1 is formed to have a diameter of 100 mm and a thickness of 3 mm. The gallium nitride (GaN) ingot 2 has a first surface 21 formed on a surface perpendicular to the axis, and a second surface 22 opposite to the first surface 21. In addition, on the outer periphery of the gallium nitride (GaN) ingot 2, a flat surface 23 that becomes a processing reference plane is formed.

對於自上述氮化鎵(GaN)錠塊2生成氮化鎵基板，係在圖示之實施形態中，實施將對於氮化鎵(GaN)而言具有透過性之波長的雷射光線之集光點，自該第1面定位於氮化鎵(GaN)錠塊之內部而進行照射，破壞GaN而形成使鎵(Ga)與氮(N)析出之界面的界面形成工程。此界面 形成工程係使用圖2所示之雷射加工裝置3而實施。圖2所示之雷射加工裝置3係具備：保持被加工物之夾盤31，和於加以保持在該夾盤31上之被加工物，照射雷射光線的雷射光線照射手段32。夾盤31係呈吸引保持被加工物地加以構成，而成為呈經由未圖示之加工傳送手段而加以移動至在圖2中，以箭頭X所示之加工傳送方向(X軸方向)之同時，經由未圖示之算出傳送手段而加以移動至在圖2中，以箭頭Y所示之算出傳送方向(Y軸方向)。另外，夾盤31係呈經由未圖示之旋轉機構而加以旋轉地加以構成。 For the production of gallium nitride substrates from the gallium nitride (GaN) ingot 2 described above, in the illustrated embodiment, the collection of laser light of a wavelength that is transparent to gallium nitride (GaN) is implemented At this point, the first surface is positioned inside the gallium nitride (GaN) ingot and irradiated to break the GaN to form an interface forming process in which the interface between gallium (Ga) and nitrogen (N) is precipitated. This interface The forming process is performed using the laser processing apparatus 3 shown in FIG. 2. The laser processing apparatus 3 shown in FIG. 2 includes a chuck 31 that holds the workpiece, and a laser beam irradiation means 32 that irradiates the laser beam with the workpiece held on the chuck 31. The chuck 31 is constructed so as to attract and hold the workpiece, and is moved to the processing and conveying direction (X-axis direction) indicated by the arrow X in FIG. 2 through processing and conveying means (not shown) It is moved to the calculation direction (Y-axis direction) indicated by the arrow Y in FIG. 2 through calculation and transmission means not shown. In addition, the chuck 31 is configured to be rotated by a rotating mechanism (not shown).

上述雷射光線照射手段32係包含：實質上加以配置為水平之圓筒形狀的套筒321。對於套筒321內，係加以配設有具備未圖示之脈衝雷射光線振盪器或反覆頻率設定手段之脈衝雷射光振盪手段。對於上述套筒321之前端部，係加以裝上：為了集光自脈衝雷射光振盪手段所振盪之脈衝雷射光線的集光器322。然而，雷射光線照射手段32係具備：為了調整經由集光器322所集光之脈衝雷射光線的集光點位置之集光點位置調整手段(未圖示)。 The laser beam irradiation means 32 includes a sleeve 321 arranged substantially in a horizontal cylindrical shape. The sleeve 321 is provided with a pulsed laser light oscillation means equipped with a pulsed laser light oscillator (not shown) or repeated frequency setting means. The front end of the sleeve 321 is equipped with a light collector 322 for collecting pulsed laser light oscillated by the pulsed laser light oscillating means. However, the laser beam irradiation means 32 is provided with a light spot position adjustment means (not shown) for adjusting the light spot position of the pulse laser light collected through the light collector 322.

對於使用上述雷射加工裝置3而實施界面形成工程，係如圖2所示，於夾盤31上面(保持面)，載置上述氮化鎵(GaN)錠塊2之第2面22側。並且，經由未圖示之吸引手段而吸著保持氮化鎵(GaN)錠塊2於夾盤31上(錠塊保持工程)。隨之，加以保持於夾盤31上之氮化鎵(GaN)錠塊2係第1面21則成為上側。此時，加以形成於 氮化鎵(GaN)錠塊2之外周的平面23則呈成為與X軸方向平行地加以定位。如此，吸引保持氮化鎵(GaN)錠塊2於夾盤31上同時，作動未圖示之加工傳送手段，而將夾盤31，移動至雷射光線照射手段32之集光器322所定位之雷射光線照射範圍，而在一端(在圖3的(a)左端)，定位於雷射光線照射手段32之集光器322的正下方。並且，呈在圖3的(b)所示地，將自集光器322所照射的脈衝雷射光線的集光點(P)，定位於自第1面21(上面)500μm內部位置。接著，作動雷射光線照射手段32而自集光器322照射脈衝雷射光線同時，將夾盤31，以特定的加工傳送速度加以移動至在圖3的(a)中，以箭頭X1所示之方向。並且，呈在圖3的(c)所示地，當氮化鎵(GaN)錠塊2之另一端(在圖3的(c)右端)到達至雷射光線照射手段32之集光器322的照射位置時，停止脈衝雷射光線的照射同時，停止夾盤31之移動。接著，將夾盤31，移動50~60μm至算出傳送方向(Y軸方向)，而實施上述界面形成工程。經由將此界面形成工程，呈在圖3的(d)所示地，實施於對應於氮化鎵(GaN)錠塊2全面之範圍之時，對於氮化鎵(GaN)錠塊2，係呈以圖3的(e)所示地，加以形成破壞氮化鎵(GaN)而使鎵(Ga)與氮(N)析出之界面24。此界面24係在圖示之實施形態中，係以10μm程度的厚度加以形成。 For the interface forming process using the laser processing apparatus 3 described above, as shown in FIG. 2, the second surface 22 side of the gallium nitride (GaN) ingot 2 is placed on the upper surface (holding surface) of the chuck 31. In addition, the gallium nitride (GaN) ingot 2 is sucked and held on the chuck 31 via suction means (not shown) (ingot holding process). Along with this, the first surface 21 of the gallium nitride (GaN) ingot 2 held on the chuck 31 becomes the upper side. At this time, it is formed in The plane 23 on the outer periphery of the gallium nitride (GaN) ingot 2 is positioned parallel to the X-axis direction. In this way, while attracting and holding the gallium nitride (GaN) ingot 2 on the chuck 31, actuating the processing and conveying means (not shown), the chuck 31 is moved to the position of the light collector 322 of the laser light irradiation means 32 The laser light irradiation range is positioned at one end (at the left end of FIG. 3(a)) directly under the light collector 322 of the laser light irradiation means 32. In addition, as shown in FIG. 3( b ), the collecting point (P) of the pulsed laser light irradiated from the light collector 322 is positioned at an internal position of 500 μm from the first surface 21 (upper surface). Next, the laser beam irradiation means 32 is activated and the pulsed laser beam is irradiated from the light collector 322, and at the same time, the chuck 31 is moved at a specific processing conveyance speed as shown in arrow (X1) in FIG. 3(a). Of direction. In addition, as shown in FIG. 3(c), when the other end of the gallium nitride (GaN) ingot 2 (at the right end in FIG. 3(c)) reaches the light collector 322 of the laser light irradiation means 32 At the irradiation position, the irradiation of the pulse laser light is stopped, and the movement of the chuck 31 is stopped. Next, the chuck 31 is moved by 50 to 60 μm to calculate the conveying direction (Y-axis direction), and the above-mentioned interface forming process is performed. Through this interface formation process, as shown in (d) of FIG. 3, when the range corresponding to the entire area of the gallium nitride (GaN) ingot 2 is implemented, for the gallium nitride (GaN) ingot 2, it is As shown in FIG. 3(e), an interface 24 is formed in which gallium nitride (GaN) is broken to precipitate gallium (Ga) and nitrogen (N). This interface 24 is formed in a thickness of approximately 10 μm in the illustrated embodiment.

然而，上述界面形成工程係將集光器322，定位於氮化鎵(GaN)錠塊2之外周部，旋轉夾盤31之同時，將集光 器322朝向中心移動，而如在圖4所示地，經由將脈衝雷射光線照射成漩渦狀於氮化鎵(GaN)錠塊2內部之時，形成破壞氮化鎵(GaN)而使鎵(Ga)與氮(N)析出之界面24亦可。 However, the above-mentioned interface forming process locates the light collector 322 on the outer peripheral portion of the gallium nitride (GaN) ingot 2 and rotates the chuck 31 while collecting light The device 322 moves toward the center, and as shown in FIG. 4, when the pulsed laser light is irradiated inside the gallium nitride (GaN) ingot 2 in a vortex shape, the gallium nitride (GaN) is destroyed and the gallium is formed. The interface 24 where (Ga) and nitrogen (N) are precipitated may also be used.

上述界面形成工程係例如，由以下的加工條件而加以實施。 The above-mentioned interface forming engineering system is implemented under the following processing conditions, for example.

波長：532nm Wavelength: 532nm

反覆頻率：15kHz Repeat frequency: 15kHz

平均輸出：0.02W Average output: 0.02W

脈衝寬度：800ps Pulse width: 800ps

集光點口徑：10μm Aperture of light collection point: 10μm

加工傳送速度：45mm/秒 Processing transmission speed: 45mm/sec

接著，實施：於氮化鎵(GaN)錠塊2之第1面21，貼著第1保持構件4之同時，於第2面22，貼著第2保持構件5之保持構件貼著工程。即，如圖5的(a)及(b)所示地，於氮化鎵(GaN)錠塊2之第1面21，藉由蠟6而貼著第1保持構件4之同時，於第2面22，藉由蠟6而貼著第2保持構件5。然而，蠟6係在圖示之實施形態中，加以使用在上述界面形成工程，形成破壞氮化鎵(GaN)而使鎵(Ga)與氮(N)析出之界面24於氮化鎵(GaN)錠塊的內部，熔融溫度則較鎵(Ga)所熔融之溫度(30℃)為高(例如100℃)的蠟。 Next, the first surface 21 of the gallium nitride (GaN) ingot 2 is attached to the first holding member 4 and the second surface 22 is attached to the holding member of the second holding member 5. That is, as shown in (a) and (b) of FIG. 5, on the first surface 21 of the gallium nitride (GaN) ingot 2, the first holding member 4 is adhered by the wax 6 while the The second surface 22 is adhered to the second holding member 5 by the wax 6. However, in the illustrated embodiment, the wax 6 is used in the above-mentioned interface formation process to form an interface 24 that breaks gallium nitride (GaN) to precipitate gallium (Ga) and nitrogen (N) on gallium nitride (GaN) ) Inside the ingot, the melting temperature is wax (for example, 100°C) that is higher than the melting temperature (30°C) of gallium (Ga).

然而，在保持構件貼著工程之第2保持構件5係在實施上述界面形成工程之前，貼著於氮化鎵(GaN)錠塊2之 第2面22亦可。 However, the second holding member 5 in the holding member attachment process is attached to the gallium nitride (GaN) ingot 2 before the above interface forming process is carried out The second surface 22 may also be.

如實施上述保持構件貼著工程時，實施：將氮化鎵(GaN)錠塊2，加熱為Ga所熔融之溫度同時，經由移動至相互背離第1保持構件4與第2保持構件5之方向之時，將氮化鎵(GaN)錠塊2，自界面24分離，生成氮化鎵基板之氮化鎵基板生成工程。即，加熱成加以實施上述保持構件貼著工程，加以形成於氮化鎵(GaN)錠塊2，形成上述界面24的鎵(Ga)所熔融之溫度。然而，在圖示之實施形態中係因加以使用，在上述之保持構件貼著工程，介入存在於氮化鎵(GaN)錠塊2之第1面21及第2面22與第1保持構件4及第2保持構件5之間的蠟6，熔融溫度則較鎵(Ga)之熔融的溫度(30℃)為高(例如，100℃)的蠟之故，成為經由蠟6的溫度而加以加熱上述界面24而使鎵(Ga)熔融之狀態。如為由此作為而加以加熱界面24而使鎵(Ga)熔融之狀態時，如圖6的(a)所示地，移動至相互背離第1保持構件4與第2保持構件5之方向。其結果，如圖6的(b)所示地，氮化鎵(GaN)錠塊2係加以分離成在界面24，加以貼著第1保持構件4，加以貼著氮化鎵基板20與第2保持構件5之氮化鎵(GaN)錠塊2。對於由如此作為加以貼著所分離之第2保持構件5的氮化鎵(GaN)錠塊2之分離面2a，係如圖6的(c)所示地，加以形成有鎵(Ga)面241，而對於加以貼著第1保持構件4之氮化鎵基板20的分離面20a，係如圖6的(d)所示地，加以形成有鎵(Ga)面241。如以上，在圖示之實施形態中，因可經由 形成破壞氮化鎵(GaN)而使鎵(Ga)與氮(N)析出之厚度為10μm程度的界面24於氮化鎵(GaN)錠塊2內部之時，而生成氮化鎵基板20之故，成為皆無經由以線鋸而切割之時所捨棄之切削屑。 When implementing the above-mentioned holding member attachment process, implement: heating the gallium nitride (GaN) ingot 2 to a temperature at which Ga is melted, and moving away from the first holding member 4 and the second holding member 5 by moving to each other At this time, the gallium nitride (GaN) ingot 2 is separated from the interface 24 to form a gallium nitride substrate generation process of a gallium nitride substrate. That is, it is heated to a temperature at which the above-mentioned holding member attachment process is performed, is formed on the gallium nitride (GaN) ingot 2, and the gallium (Ga) forming the interface 24 is melted. However, in the illustrated embodiment, it is used for the above-mentioned holding member attachment process, intervening in the first surface 21 and the second surface 22 of the gallium nitride (GaN) ingot 2 and the first holding member The wax 6 between the 4 and the second holding member 5 has a melting temperature higher than the melting temperature (30°C) of gallium (Ga) (for example, 100°C). The interface 24 is heated to melt gallium (Ga). When the interface 24 is heated to melt gallium (Ga) as described above, as shown in FIG. 6( a ), it moves to a direction away from the first holding member 4 and the second holding member 5. As a result, as shown in FIG. 6(b), the gallium nitride (GaN) ingot 2 is separated into the interface 24, the first holding member 4 is attached, and the gallium nitride substrate 20 and the first 2 Gallium nitride (GaN) ingot 2 holding member 5. The separation surface 2a of the gallium nitride (GaN) ingot 2 as the second holding member 5 separated as described above is formed with a gallium (Ga) surface as shown in (c) of FIG. 6 241, the separation surface 20a of the gallium nitride substrate 20 to which the first holding member 4 is attached is formed with a gallium (Ga) surface 241 as shown in FIG. 6(d). As mentioned above, in the illustrated embodiment, due to When an interface 24 with a thickness of about 10 μm that breaks down gallium nitride (GaN) and precipitates gallium (Ga) and nitrogen (N) is formed inside the gallium nitride (GaN) ingot 2, a gallium nitride substrate 20 is formed Therefore, there is no cutting swarf that is discarded when cutting with a wire saw.

接著，實施研削形成於析出於上述界面24，加以形成於經由氮化鎵基板生成工程所分離之氮化鎵基板之分離面及氮化鎵(GaN)錠塊2之分離面的鎵(Ga)面241而除去之研削工程。此研削工程係使用圖7的(a)所示之研削裝置7而實施。圖7的(a)所示之研削裝置7係具備：保持被加工物之夾盤71，和研削加以保持於該夾盤71之被加工物的研削手段72。夾盤71係呈吸引保持被加工物於保持面之上面地加以構成，經由未圖示之旋轉驅動機構，加以旋轉於在圖7的(a)中，以箭頭71a所示之方向。研削手段72係具備：主軸輪轂套721，和經由旋轉自由地加以支持於該主軸輪轂套721，未圖示之旋轉驅動機構而加以旋轉之旋轉心軸722，和加以裝上於該旋轉心軸722之下端的固定件723，和加以安裝於該固定件723下面之研削輪724。此研削輪724係由圓環狀的基台725，和環狀地加以裝上於該基台725下面之研磨石726所成，而基台725則經由締結螺栓727加以安裝於固定件723下面。 Next, grinding is performed to form gallium (Ga) formed on the separation surface of the above-mentioned interface 24 and formed on the separation surface of the gallium nitride substrate separated by the gallium nitride substrate generation process and the separation surface of the gallium nitride (GaN) ingot 2 Surface 241 and removed the grinding process. This grinding process is performed using the grinding device 7 shown in (a) of FIG. 7. The grinding device 7 shown in (a) of FIG. 7 includes a chuck 71 that holds the workpiece, and a grinding means 72 that grinds and holds the workpiece on the chuck 71. The chuck 71 is configured to attract and hold the workpiece on the upper surface of the holding surface, and is rotated in the direction indicated by the arrow 71a in FIG. 7(a) via a rotation drive mechanism (not shown). Grinding means 72 includes a spindle hub 721, a spindle 722 which is supported by the spindle hub 721 freely through rotation, a rotation drive mechanism (not shown), and a rotation mandrel A fixing member 723 at the lower end of 722, and a grinding wheel 724 mounted below the fixing member 723. The grinding wheel 724 is composed of an annular base 725, and a grinding stone 726 which is annularly mounted under the base 725, and the base 725 is installed under the fixing member 723 via a tie bolt 727 .

對於實施使用上述之研削裝置7而研削除去形成於氮化鎵基板20之分離面的鎵(Ga)面241之第1研削工程，係如圖7的(a)所示地，於夾盤71上面(保持面)，載置加以貼著於經由上述氮化鎵基板生成工程所分 離之氮化鎵基板20之第1保持構件4側。並且，經由作動未圖示之吸引手段，而於夾盤71上，藉由第1保持構件4而吸引保持氮化鎵基板20。隨之，加以保持於夾盤71上之氮化鎵基板20，係加以形成於分離面的鎵(Ga)面241則成為上側。如此，如藉由第1保持構件4而吸引保持氮化鎵基板20於夾盤71上時，將夾盤71，於在圖7的(a)及(b)中以箭頭71a所示之方向，例如以300rpm進行旋轉的同時，將研削手段72之研削輪724，於在圖7的(a)及(b)中以箭頭724a所示之方向，例如以6000rpm進行旋轉，再如圖7的(b)所示地，使研磨石726，接觸於加以形成於被加工面之氮化鎵基板20的分離面的鎵(Ga)面241，將研削輪724，在圖7的(a)及(b)中以箭頭724b所示地，例如以1μm/秒之研削傳送速度，特定量(10~20μm)研削傳送於下方(對於夾盤71之保持面而言垂直之方向)。其結果，加以研削形成於氮化鎵基板20之分離面的鎵(Ga)面241，如在圖7的(c)所示地，加以除去形成於氮化鎵基板20之分離面20a的鎵(Ga)面。 The first grinding process for grinding and removing the gallium (Ga) surface 241 formed on the separation surface of the gallium nitride substrate 20 using the grinding device 7 described above is performed on the chuck 71 as shown in FIG. 7(a). The upper surface (holding surface) is placed and attached to the GaN substrate production process. The first holding member 4 side of the separated gallium nitride substrate 20. In addition, the first holding member 4 sucks and holds the gallium nitride substrate 20 on the chuck 71 by actuating suction means (not shown). Along with this, the gallium nitride substrate 20 held on the chuck 71 and the gallium (Ga) surface 241 formed on the separation surface become the upper side. In this way, when the first holding member 4 attracts and holds the gallium nitride substrate 20 on the chuck 71, the chuck 71 is moved in the direction indicated by the arrow 71a in (a) and (b) of FIG. 7 For example, while rotating at 300 rpm, the grinding wheel 724 of the grinding means 72 is rotated in the direction indicated by the arrow 724a in (a) and (b) of FIG. 7, for example, at 6000 rpm, as shown in FIG. 7 (b) As shown in the figure, the grinding stone 726 is brought into contact with the gallium (Ga) surface 241 formed on the separation surface of the gallium nitride substrate 20 to be processed, and the grinding wheel 724 is applied. In (b), as indicated by an arrow 724b, for example, at a grinding transfer speed of 1 μm/sec, a specific amount (10 to 20 μm) of the grinding transfer is below (the direction perpendicular to the holding surface of the chuck 71). As a result, the gallium (Ga) surface 241 formed on the separation surface of the gallium nitride substrate 20 is ground, and the gallium formed on the separation surface 20a of the gallium nitride substrate 20 is removed as shown in FIG. 7(c). (Ga) surface.

接著，使用上述之研削裝置7，而實施除去經由上述氮化鎵基板生成工程所分離，形成於加以貼著第2保持構件5的氮化鎵(GaN)錠塊2之分離面的鎵(Ga)面241之第2研削工程。即，如圖8的(a)所示地，於夾盤71上面(保持面)，載置加以貼著於經由上述氮化鎵基板生成工程所分離之氮化鎵(GaN)錠塊2之第2保持構件5側。並且，經由作動未圖示之吸引手段，而於夾盤71上，藉由 第2保持構件5而吸引保持氮化鎵(GaN)錠塊2。隨之，加以保持於夾盤71上之氮化鎵(GaN)錠塊2，係加以形成於分離面的鎵(Ga)面241則成為上側。如此，如藉由第2保持構件5而吸引保持氮化鎵(GaN)錠塊2於夾盤71上時，將夾盤71，於在圖8的(a)中以箭頭71a所示之方向，例如以300rpm進行旋轉的同時，將研削手段72之研削輪724，於在圖8的(a)中以箭頭724a所示之方向，例如以6000rpm進行旋轉，再如圖8的(a)所示地，使研磨石726，接觸於加以形成於被加工面之氮化鎵(GaN)錠塊2的分離面的鎵(Ga)面241，將研削輪724，在圖8的(a)中以箭頭724b所示地，例如以1μm/秒之研削傳送速度，特定量(10~20μm)研削傳送於下方(對於夾盤71之保持面而言垂直之方向)。其結果，加以研削形成於氮化鎵(GaN)錠塊2之分離面的鎵(Ga)面241，如在圖8的(b)所示地，加以除去形成於氮化鎵(GaN)錠塊2之分離面2a的鎵(Ga)面。 Next, using the grinding device 7 described above, removal of the gallium (Ga) formed on the separation surface of the gallium nitride (GaN) ingot 2 to which the second holding member 5 is attached separated by the gallium nitride substrate generation process is performed. ) The second grinding project of surface 241. That is, as shown in FIG. 8(a), on the upper surface (holding surface) of the chuck 71, the gallium nitride (GaN) ingot 2 separated by the above-described gallium nitride substrate generation process is placed and attached The second holding member 5 side. And, by actuating a suction means not shown, on the chuck 71, by The second holding member 5 attracts and holds the gallium nitride (GaN) ingot 2. Along with this, the gallium nitride (GaN) ingot 2 held on the chuck 71 and the gallium (Ga) surface 241 formed on the separation surface become the upper side. In this way, when the second holding member 5 attracts and holds the gallium nitride (GaN) ingot 2 on the chuck 71, the chuck 71 is moved in the direction indicated by the arrow 71a in FIG. 8(a). For example, while rotating at 300 rpm, the grinding wheel 724 of the grinding means 72 is rotated in the direction indicated by the arrow 724a in FIG. 8 (a), for example, at 6000 rpm, as shown in FIG. 8 (a) As shown, the grinding stone 726 is brought into contact with the gallium (Ga) surface 241 that is formed on the separation surface of the gallium nitride (GaN) ingot 2 formed on the surface to be processed, and the grinding wheel 724 is shown in FIG. 8(a). As indicated by the arrow 724b, for example, at a grinding transfer speed of 1 μm/sec, a specific amount (10 to 20 μm) of the grinding transfer is below (the direction perpendicular to the holding surface of the chuck 71). As a result, the gallium (Ga) surface 241 formed on the separation surface of the gallium nitride (GaN) ingot 2 is ground, as shown in FIG. 8(b), and removed from the gallium nitride (GaN) ingot The gallium (Ga) plane of the separation plane 2a of the block 2.

如實施如以上作為，研削形成於經由氮化鎵基板生成工程所分離之氮化鎵基板20的分離面及氮化鎵(GaN)錠塊2之分離面的鎵(Ga)面241而除去之研削工程時，實施分離除去形成於分離面之鎵(Ga)，加以貼著於氮化鎵基板20的第1保持構件4之保持構件分離工程。即，如圖9的(a)所示，於剝離裝置8之保持台81上，載置加以實施上述研削工程之氮化鎵基板20的第1保持構件4側，再經由作動未圖示之吸引手段，藉由第1保持構 件4而吸引保持氮化鎵基板20於保持台81上。隨之，藉由第1保持構件4而加以保持於保持台81上之氮化鎵基板20，係分離面20a則成為上側。並且，作動加以配設於保持台81之未圖示之加熱器，而加熱第1保持構件4，將介入存在於第1保持構件4與氮化鎵基板20之間的蠟6，加熱至熔融溫度(例如，100℃)。接著，如圖9的(b)所示地，將吸引墊82下面之吸引面，載置於藉由第1保持構件4而加以吸引保持於保持台81上之氮化鎵基板20的上面(分離面20a)之同時，經由作動未圖示之吸引手段，而於吸引墊82下面之吸引面，吸引氮化鎵基板20的上面。並且，如圖9的(c)所示地，經由將吸引墊82，拉起於自保持台81背離之方向之時，可將氮化鎵基板20，自第1保持構件4分離者。 As implemented as above, the gallium (Ga) surface 241 formed on the separation surface of the gallium nitride substrate 20 separated by the gallium nitride substrate production process and the separation surface of the gallium nitride (GaN) ingot 2 is ground and removed At the time of the grinding process, a separation process of separating and removing gallium (Ga) formed on the separation surface and attaching the first holding member 4 to the gallium nitride substrate 20 is performed. That is, as shown in FIG. 9(a), on the holding table 81 of the peeling device 8, the first holding member 4 side of the gallium nitride substrate 20 subjected to the above-mentioned grinding process is placed, and the Attracting means, with the first holding structure The material 4 attracts and holds the gallium nitride substrate 20 on the holding table 81. Along with this, the gallium nitride substrate 20 held on the holding table 81 by the first holding member 4 becomes the upper side of the separation surface 20a. Then, a heater (not shown) disposed on the holding table 81 is operated to heat the first holding member 4, and the wax 6 interposed between the first holding member 4 and the gallium nitride substrate 20 is heated to melt Temperature (for example, 100°C). Next, as shown in FIG. 9( b ), the suction surface of the lower surface of the suction pad 82 is placed on the upper surface of the gallium nitride substrate 20 that is sucked and held on the holding table 81 by the first holding member 4 ( Simultaneously with the separation surface 20a), the upper surface of the gallium nitride substrate 20 is attracted by actuating the suction means not shown, and the suction surface below the suction pad 82. Further, as shown in FIG. 9( c ), when the suction pad 82 is pulled up in a direction away from the holding table 81, the gallium nitride substrate 20 can be separated from the first holding member 4.

如上述，如自氮化鎵(GaN)錠塊2生成1片之氮化鎵基板20時，對於所殘留之氮化鎵(GaN)錠塊2而言，反覆4次實施上述界面形成工程，於加以實施界面形成工程之氮化鎵(GaN)錠塊2的第1面21，貼著第1保持構件4之保持構件貼著工程，氮化鎵基板生成工程，研削工程，保持構件分離工程。其結果，在圖示之實施形態中，係成為可自直徑100mm，厚度為3mm之氮化鎵(GaN)錠塊2，生成5片厚度為略500μm之氮化鎵基板20者，比較於以線鋸進行切割之以往的加工方法，生產性則提升2.5倍。 As described above, when one gallium nitride substrate 20 is produced from the gallium nitride (GaN) ingot 2, the above-mentioned interface formation process is repeated for the remaining gallium nitride (GaN) ingot 2 four times. On the first surface 21 of the gallium nitride (GaN) ingot 2 to which the interface forming process is performed, the holding member attaching process to the first holding member 4, the gallium nitride substrate generation process, the grinding process, the holding member separation process . As a result, in the illustrated embodiment, a gallium nitride (GaN) ingot 2 with a diameter of 100 mm and a thickness of 3 mm can be used to produce 5 gallium nitride substrates 20 with a thickness of approximately 500 μm. The conventional processing method of wire saw cutting improves productivity by 2.5 times.

2‧‧‧氮化鎵(GaN)錠塊 2‧‧‧Gallium nitride (GaN) ingot

2a‧‧‧錠塊2之分離面 2a‧‧‧Separation surface of ingot 2

4‧‧‧第1保持構件 4‧‧‧First holding member

5‧‧‧第2保持構件 5‧‧‧Second holding member

6‧‧‧蠟 6‧‧‧wax

20‧‧‧氮化鎵基板 20‧‧‧GaN substrate

20a‧‧‧基板20之分離面 20a‧‧‧Separation surface of substrate 20

23‧‧‧平面 23‧‧‧plane

24‧‧‧界面 24‧‧‧Interface

241‧‧‧鎵(Ga)面 241‧‧‧Ga

Claims (3)

一種氮化鎵基板之生成方法，係將具有第1面，和與該第1面相反側的第2面之氮化鎵(GaN)錠塊，生成為複數之氮化鎵基板的氮化鎵基板之生成方法，其特徵為包含：將對於氮化鎵(GaN)而言具有透過性之波長的雷射光線之集光點，自該第1面定位於氮化鎵(GaN)錠塊之內部而進行照射，形成破壞氮化鎵(GaN)而使鎵(Ga)與氮(N)析出之界面的界面形成工程，和於氮化鎵(GaN)錠塊之該第1面，貼著第1保持構件之同時，於該第2面，貼著第2保持構件的保持構件貼著工程，和經由加熱氮化鎵(GaN)錠塊之同時，移動該第1保持構件與該第2保持構件至相互背離的方向而自該界面分離氮化鎵(GaN)錠塊，生成氮化鎵基板之氮化鎵基板生成工程；該保持構件貼著工程，係使用較熔融該鎵(Ga)之溫度為高的溫度而熔融的蠟，於該第1面，貼著該第1保持構件之同時，於該第2面，貼著該第2保持構件，該氮化鎵基板生成工程中，加熱該氮化鎵(GaN)錠時之溫度係熔融鎵(Ga)之溫度以上，且不到熔融蠟之溫度者。 A method of forming a gallium nitride substrate is to form a gallium nitride (GaN) ingot having a first surface and a second surface opposite to the first surface to form a plurality of gallium nitride substrates of gallium nitride The method of generating a substrate is characterized by including: collecting a collection point of laser light of a wavelength that is transparent to gallium nitride (GaN) from the first surface to a gallium nitride (GaN) ingot It is irradiated inside to form an interface formation process that breaks the interface of gallium nitride (GaN) to precipitate gallium (Ga) and nitrogen (N), and is attached to the first surface of the gallium nitride (GaN) ingot At the same time as the first holding member, on the second surface, the holding member adhering to the second holding member is attached, and while heating the gallium nitride (GaN) ingot, the first holding member and the second holding member are moved The holding member is in a direction away from each other and the gallium nitride (GaN) ingot is separated from the interface to generate a gallium nitride substrate generation process of the gallium nitride substrate; the holding member is attached to the project, which uses the molten gallium (Ga) The wax whose temperature is high temperature is melted, while the first holding member is attached to the first surface, and the second holding member is attached to the second surface, the gallium nitride substrate production process, The temperature at which the gallium nitride (GaN) ingot is heated is higher than the temperature of molten gallium (Ga) and less than the temperature of molten wax. 如申請專利範圍第1項記載之氮化鎵基板之生成方法，其中，該保持構件貼著工程之該第2保持構件，係在 實施上述界面形成工程之前，貼著於該第2面。 The method for producing a gallium nitride substrate as described in item 1 of the patent application scope, wherein the holding member is attached to the second holding member of the project is Before performing the above-mentioned interface forming process, stick to the second surface. 如申請專利範圍第1項記載之氮化鎵基板之生成方法，其中，實施研削除去形成於經由析出於該界面之氮化鎵基板形成工程所分離之氮化鎵基板之分離面的鎵(Ga)面之研削工程。 The method for forming a gallium nitride substrate as described in item 1 of the patent application scope, wherein grinding is performed to remove the gallium (Ga) formed on the separation surface of the gallium nitride substrate separated by the gallium nitride substrate formation process deposited at the interface ) Surface grinding engineering.
TW105125168A 2015-09-15 2016-08-08 Generation method of gallium nitride substrate TWI689367B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-181950 2015-09-15
JP2015181950A JP6633326B2 (en) 2015-09-15 2015-09-15 Method for producing gallium nitride substrate

Publications (2)

Publication Number Publication Date
TW201713448A TW201713448A (en) 2017-04-16
TWI689367B true TWI689367B (en) 2020-04-01

Family

ID=58391371

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105125168A TWI689367B (en) 2015-09-15 2016-08-08 Generation method of gallium nitride substrate

Country Status (4)

Country Link
JP (1) JP6633326B2 (en)
KR (1) KR102428702B1 (en)
CN (1) CN107053498A (en)
TW (1) TWI689367B (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019043808A (en) * 2017-09-01 2019-03-22 国立大学法人名古屋大学 Substrate manufacturing method
US10388526B1 (en) 2018-04-20 2019-08-20 Semiconductor Components Industries, Llc Semiconductor wafer thinning systems and related methods
US11121035B2 (en) 2018-05-22 2021-09-14 Semiconductor Components Industries, Llc Semiconductor substrate processing methods
US10896815B2 (en) 2018-05-22 2021-01-19 Semiconductor Components Industries, Llc Semiconductor substrate singulation systems and related methods
US20190363018A1 (en) 2018-05-24 2019-11-28 Semiconductor Components Industries, Llc Die cleaning systems and related methods
US11830771B2 (en) 2018-05-31 2023-11-28 Semiconductor Components Industries, Llc Semiconductor substrate production systems and related methods
US10468304B1 (en) 2018-05-31 2019-11-05 Semiconductor Components Industries, Llc Semiconductor substrate production systems and related methods
JP7201367B2 (en) * 2018-08-29 2023-01-10 株式会社ディスコ SiC substrate processing method
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
CN112967948B (en) * 2020-08-05 2022-05-20 重庆康佳光电技术研究院有限公司 Gallium metal removing device and gallium metal removing method
CN112975117B (en) * 2020-08-27 2022-09-13 重庆康佳光电技术研究院有限公司 Laser stripping method and device
JP2022133809A (en) 2021-03-02 2022-09-14 浜松ホトニクス株式会社 Substrate manufacturing device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JP2006024782A (en) * 2004-07-08 2006-01-26 Sharp Corp Substrate manufacturing method and apparatus
JP2009061462A (en) * 2007-09-05 2009-03-26 Sumitomo Electric Ind Ltd Method for manufacturing substrate, and substrate
JP2010045151A (en) * 2008-08-12 2010-02-25 Disco Abrasive Syst Ltd Method of processing optical device wafer

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2241850C3 (en) * 1972-08-25 1978-06-29 European Rotogravure Association, 8000 Muenchen Process for the production of printing forms by means of an energy beam
JPH0542337A (en) * 1991-08-08 1993-02-23 Amada Co Ltd Method for forming free curved surface by laser beam
CN2201907Y (en) * 1994-08-11 1995-06-28 李中科 Laser three-dimensional scanning device for dentognathic mould
JP2000094221A (en) 1998-09-24 2000-04-04 Toyo Advanced Technologies Co Ltd Electric discharge wire saw
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
JP4576755B2 (en) * 2001-06-18 2010-11-10 パナソニック株式会社 Semiconductor substrate manufacturing method and apparatus
CN100359636C (en) * 2005-11-04 2008-01-02 南京大学 Improved laser stripped method of preparing self-supporting gallium nitride substrate
CN100533666C (en) * 2008-03-19 2009-08-26 厦门大学 Preparation of gallium nitride based epitaxial film
JP4386142B2 (en) * 2009-01-23 2009-12-16 三菱化学株式会社 Nitride semiconductor device manufacturing method
CN101610643B (en) * 2009-07-14 2010-12-01 华中科技大学 Method for processing blind hole by laser
JP5549158B2 (en) * 2009-09-04 2014-07-16 住友電気工業株式会社 GaN single crystal substrate and manufacturing method thereof, and GaN-based semiconductor device and manufacturing method thereof
JP2012109341A (en) * 2010-11-16 2012-06-07 Shibuya Kogyo Co Ltd Slicing method and slicing device of semiconductor material
US20130312460A1 (en) * 2011-02-10 2013-11-28 National University Corporation Saitama University Manufacturing method of single crystal substrate and manufacturing method of internal modified layer-forming single crystal member
JP6032789B2 (en) * 2012-02-01 2016-11-30 信越ポリマー株式会社 Method for manufacturing single crystal processed member and method for manufacturing single crystal substrate
CN103325878B (en) * 2013-05-31 2015-12-23 西安电子科技大学 A kind of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell and preparation method thereof
CN103824905A (en) * 2014-02-24 2014-05-28 无锡晶凯科技有限公司 Laser lift-off method for flexible electronic application of sapphire substrate of gallium nitride LED
CN103887377B (en) * 2014-03-12 2016-04-27 江苏新广联科技股份有限公司 Reduce the device technology of GaN base vertical structure LED electric leakage

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JP2006024782A (en) * 2004-07-08 2006-01-26 Sharp Corp Substrate manufacturing method and apparatus
JP2009061462A (en) * 2007-09-05 2009-03-26 Sumitomo Electric Ind Ltd Method for manufacturing substrate, and substrate
JP2010045151A (en) * 2008-08-12 2010-02-25 Disco Abrasive Syst Ltd Method of processing optical device wafer

Also Published As

Publication number Publication date
KR20170032843A (en) 2017-03-23
TW201713448A (en) 2017-04-16
CN107053498A (en) 2017-08-18
JP6633326B2 (en) 2020-01-22
JP2017057103A (en) 2017-03-23
KR102428702B1 (en) 2022-08-02

Similar Documents

Publication Publication Date Title
TWI689367B (en) Generation method of gallium nitride substrate
TWI721206B (en) SiC wafer generation method
TWI630971B (en) Wafer processing method
TWI748088B (en) SiC wafer generation method
JP5766530B2 (en) Processing method of optical device wafer
KR102217032B1 (en) Lift-off method
CN102398313B (en) Optical device wafer processing method
KR102486694B1 (en) Method of processing optical device wafer
JP6974133B2 (en) How to mold a SiC ingot
TW201419392A (en) Wafer processing method
TW201834030A (en) Wafer processing method
JP2015032771A (en) Method of manufacturing wafer
TW201942426A (en) Method of producing wafer
JP6523882B2 (en) Wafer processing method
US20160268155A1 (en) Method of processing single-crystal substrate
TW202009989A (en) Semiconductor substrate processing method
JP2020178123A (en) Board processing method
US10157793B2 (en) Method of processing single-crystal substrate
JP5889642B2 (en) Processing method of optical device wafer
JP2010135537A (en) Method of processing wafer
JP2013219271A (en) Method for processing optical device wafer
JP2017050444A (en) Method for peeling optical device layer
JP2013219076A (en) Method for processing optical device wafer
JP2023026921A (en) Wafer processing method