CN107053498A - The generation method of gallium nitride base board - Google Patents
The generation method of gallium nitride base board Download PDFInfo
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- CN107053498A CN107053498A CN201610819653.1A CN201610819653A CN107053498A CN 107053498 A CN107053498 A CN 107053498A CN 201610819653 A CN201610819653 A CN 201610819653A CN 107053498 A CN107053498 A CN 107053498A
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/102—Material of the semiconductor or solid state bodies
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- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
Abstract
The generation method of gallium nitride base board is provided, lavishly substantial amounts of gallium nitride base board is not generated from gallium nitride (GaN) ingot.The gallium nitride ingot has the 2nd face of the 1st face and the opposite side in the 1st face, and the generation method of the gallium nitride base board includes following process：Interface formation process, is positioned at the inside of gallium nitride ingot by the focal point of the laser beam of the wavelength for gallium nitride with permeability from the 1st face and is irradiated, and forms the interface destroyed gallium nitride and separate out gallium (Ga) and nitrogen (N)；Holding member bonding process, the 1st holding member is bonded on the 1st face of gallium nitride ingot, and the 2nd holding member is bonded on the 2nd face；With gallium nitride base board generation process, the temperature that gallium nitride ingot is heated to melt gallium, and the 1st holding member and the 2nd holding member is moved to direction away from each other, thus gallium nitride ingot is separated from the interface and gallium nitride base board is generated.
Description
Technical field
The present invention relates to the generation method of gallium nitride base board, the nitrogen with defined thickness is generated from gallium nitride (GaN) ingot
Change gallium substrate.
Background technology
Because gallium nitride (GaN) energy gap (band gap) is bigger than silicon 3 times, insulation breakdown voltage is also high, so making
Utilized for the semiconductor element (power device) of Power Control.For example, in power device die, in gallium nitride base
Power device is formed with multiple regions that a plurality of segmentation preset lines arranged by clathrate are divided on the upper surface of plate, along
The power device die is divided into each power device by segmentation preset lines, and applied to the control dress such as personal computer, automobile
In putting.
On the gallium nitride base board of above-mentioned composition power device die, gallium nitride (GaN) ingot is entered using wire cutting machine
The positive back side of row section and the gallium nitride base board obtained to section is ground and is finish-machined to minute surface (for example, referring to patent text
Offer 1).
Patent document 1：Japanese Unexamined Patent Publication 2000-94221 publications
However, due to needing suitable therewith equipment and time in the manufacture of gallium nitride (GaN) ingot, so not only for example
Gallium nitride (GaN) ingot that a diameter of 100mm and thickness are 3mm will spend millions of yen of high price, and ought utilize wire cutting
The 60~70% of gallium nitride (GaN) ingot are rejected as cutting swarf when machine is cut into slices, and exist uneconomical and productivity is poor
The problem of.
The content of the invention
The present invention is to complete in view of the above fact, and its main technical task is the generation for providing gallium nitride base board
Method, lavishly can not generate substantial amounts of gallium nitride base board from gallium nitride (GaN) ingot.
In order to solve above-mentioned main technical task, according to the present invention there is provided the generation method of gallium nitride base board, it will nitrogenize
Gallium (GaN) ingot generates multiple gallium nitride base boards, and gallium nitride (GaN) ingot has the of the 1st face and the opposite side in the 1st face
2 faces, it is characterised in that the generation method of the gallium nitride base board has following process：
Interface formation process, will be for the poly- of the laser beam of wavelength of the gallium nitride (GaN) with permeability from the 1st face
Optical codes are irradiated in the inside of gallium nitride (GaN) ingot, are formed and are destroyed gallium nitride (GaN) and make gallium (Ga) and nitrogen
(N) interface separated out；
On holding member bonding process, the 1st face that the 1st holding member is bonded in gallium nitride (GaN) ingot, and by
2 holding members are bonded on the 2nd face；And
Gallium nitride base board generation process, the temperature that gallium nitride (GaN) ingot is heated to melt gallium (Ga), and make
1st holding member and the 2nd holding member are moved to direction away from each other, thus from the interface by gallium nitride (GaN) ingot
Separate and generate gallium nitride base board.
State on the implementation before the formation process of interface, the 2nd holding member in above-mentioned holding member bonding process is bonded
On the 2nd face.
In the holding member bonding process, for gallium nitride (GaN) ingot, the 1st holding member is bonded using wax
It is bonded on the 1st face and by the 2nd holding member on the 2nd face, wherein, the wax is being melted than gallium (Ga)
Melted at the high temperature of temperature.
The generation method of the gallium nitride base board implements following grinding process：To separate out in above-mentioned interface and formed passing through
Gallium nitride base board formation process and gallium (Ga) face on the parting surface of gallium nitride base board that separates are ground and removed.
The generation method of the gallium nitride base board of the present invention includes following process：Interface formation process, will be for from the 1st face
The focal point of the laser beam of wavelength of the gallium nitride (GaN) with permeability is positioned at the inside and progress of gallium nitride (GaN) ingot
Irradiation, forms the interface destroyed gallium nitride (GaN) and separate out gallium (Ga) and nitrogen (N)；Holding member bonding process, by the 1st
Holding member is bonded on the 1st face of gallium nitride (GaN) ingot, and the 2nd holding member is bonded on the 2nd face；Gallium nitride base
Plate generation process, the temperature that gallium nitride (GaN) ingot is heated to melt gallium (Ga), and make the 1st holding member and the 2nd
Holding member is moved to direction away from each other, thus, is separated gallium nitride (GaN) ingot from interface and is generated gallium nitride base board,
Therefore, gallium nitride (GaN) destruction is made to the interface of gallium (Ga) and nitrogen (N) precipitation in being internally formed for gallium nitride (GaN) ingot, by
This, can generate gallium nitride base board, thereby it is entirely avoided give up as in the past because being cut into slices using wire cutting machine
Cutting swarf.Therefore, it is possible to gallium nitride (GaN) ingot lavishly is not generated as into gallium nitride base board, with conventional utilization wire cutting machine
The processing method cut into slices is compared, and productivity improves 2.5 times.
Brief description of the drawings
Fig. 1 is the stereogram of gallium nitride (GaN) ingot being processed by the generation method of the gallium nitride base board of the present invention.
Fig. 2 is the laser processing device for implementing the interface formation process in the generation method of the gallium nitride base board of the present invention
The major part stereogram put.
Fig. 3 (a)~(e) be the present invention gallium nitride base board generation method in interface formation process explanation figure.
Fig. 4 be implement the present invention gallium nitride base board generation method in interface formation process other embodiment party
The top view of gallium nitride (GaN) ingot of formula.
Fig. 5 (a), (b) be the present invention gallium nitride base board generation method in holding member bonding process explanation
Figure.
Fig. 6 (a)~(d) be the present invention gallium nitride base board generation method in holding member separation circuit explanation
Figure.
Fig. 7 (a)~(c) is the 1st implementation for showing the grinding process in the generation method of the gallium nitride base board of the present invention
The explanation figure of mode.
Fig. 8 (a), (b) is the 2nd embodiment party for showing the grinding process in the generation method of the gallium nitride base board of the present invention
The explanation figure of formula.
Fig. 9 (a)~(c) be the present invention gallium nitride base board generation method in holding member separation circuit explanation
Figure.
Label declaration
2：Gallium nitride (GaN) ingot；20：Gallium nitride base board；3：Laser processing device；31：The chuck work of laser processing device
Make platform；32：Laser light irradiation unit；322：Concentrator；4：1st holding member；5：2nd holding member；6：Wax；7：Grinding dress
Put；71：The chuck table of grinding attachment；72：Grinding unit；8：Stripping off device；81：Keep workbench；82：Attracting pad.
Embodiment
Hereinafter, the generation method referring to the drawings to the gallium nitride base board of the present invention is described in more detail.
Figure 1 illustrates gallium nitride (GaN) ingot that the generation method of the gallium nitride base board by the present invention is processed
Stereogram.Gallium nitride (GaN) ingot 2 shown in Fig. 1 is formed as a diameter of 100mm and thickness is 3mm.Gallium nitride (GaN) ingot 2
2nd face 22 of the opposite side with the 1st face 21 and in the 1st face 21, wherein, the 1st face 21 is formed as and axis perpendicular
Face.Also, it is formed with the plane 23 as processing datum in the periphery of gallium nitride (GaN) ingot 2.
Want to generate gallium nitride base board from above-mentioned gallium nitride (GaN) ingot 2, then implement interface formation process, in the reality of diagram
Apply in mode, nitrogen is positioned at from the 1st face by the focal point of the laser beam of the wavelength for gallium nitride (GaN) with permeability
Change the inside of gallium (GaN) ingot and be irradiated, form the interface that GaN is destroyed and gallium (Ga) and nitrogen (N) is separated out.Use Fig. 2
Shown laser processing device 3 implements the interface formation process.Laser processing device 3 shown in Fig. 2 has：Chuck table
31, it keeps to machined object；And laser light irradiation unit 32, it is to the quilt that is maintained on the chuck table 31
Machining object irradiates laser beam.Chuck table 31 is configured to carry out attracting holding to machined object, passes through processing (not shown)
Moved in the processing direction of feed (X-direction) of feed unit in fig. 2 shown in arrow X, and by it is (not shown) index into
To being moved on the index feed direction (Y direction) of unit in fig. 2 shown in arrow Y.Also, chuck table 31 is configured to logical
Cross rotating mechanism (not shown) and rotate.
The shell 321 of drum of the above-mentioned laser light irradiation unit 32 comprising substantial horizontal arrangement.In shell 321
Pulse laser light oscillating unit is inside equipped with, there is the pulse laser light oscillating unit pulse laser light (not shown) to shake
Swing device and repetition rate setup unit.Concentrator 322 is installed in the leading section of above-mentioned shell 321, the concentrator 322 be used for pair
The pulse laser light is vibrated from pulse laser light oscillating unit to be assembled.In addition, laser light irradiation unit 32 has
There is focal point position adjustment unit (not shown), the focal point position adjustment unit is used for the pulse to being assembled by concentrator 322
The focal point position of laser beam is adjusted.
Want to implement interface formation process using above-mentioned laser processing device 3, then as shown in Fig. 2 by above-mentioned gallium nitride
(GaN) side of the 2nd face 22 of ingot 2 is placed on the upper surface of chuck table 31 (retaining surface).Also, attracted by (not shown)
The absorption of gallium nitride (GaN) ingot 2 is maintained on chuck table 31 (ingot holding process) by unit.Therefore, on chuck table 31
1st face 21 of gallium nitride (GaN) ingot 2 kept turns into upside.Now, will be formed in gallium nitride (GaN) ingot 2 periphery it is flat
Face 23 is positioned to parallel with X-direction.So, after by the attracting holding of gallium nitride (GaN) ingot 2 on chuck table 31,
Processing feed unit (not shown) is set to act and be moved to chuck table 31 concentrator 322 of laser light irradiation unit 32
The laser light irradiation region being located at, and its one end (left end in Fig. 3 (a)) is positioned at laser light irradiation unit 32
The underface of concentrator 322.Also, as shown in Fig. 3 (b), by the focal point of the pulse laser light irradiated from concentrator 322
(P) it is positioned at the interior location away from the 1st 500 μm of face 21 (upper surface).Then, while act laser light irradiation unit 32 and
From the irradiated with pulse laser light of concentrator 322, while making chuck table 31 according to the direction shown in arrow X1 in Fig. 3 (a)
With defined processing feed speed movement.Also, as Fig. 3 (c) shown in, gallium nitride (GaN) ingot 2 the other end (Fig. 3's
(c) right-hand member in) reach laser light irradiation unit 32 concentrator 322 irradiation position after, stop pulse laser beam
Irradiate and stop the movement of chuck table 31.Then, chuck table 31 is moved in index feed direction (Y direction)
Move 50~60 μm and implement above-mentioned interface formation process.As shown in Fig. 3 (d), in the entire surface pair with gallium nitride (GaN) ingot 2
Implement the interface formation process in the region answered, so that as shown in Fig. 3 (e), being formed in gallium nitride (GaN) ingot 2 will nitridation
The interface 24 that gallium (GaN) destroys and separates out gallium (Ga) and nitrogen (N).The interface 24 is formed as 10 μm in the illustrated embodiment
The thickness of left and right.
In addition, on above-mentioned interface formation process or, concentrator 322 is positioned at gallium nitride (GaN) ingot 2
Peripheral part, one side of one side rotary chuck workbench 31 makes concentrator 322 be moved towards center, as shown in figure 4, to gallium nitride
(GaN) intra helical of ingot 2 ground irradiated with pulse laser light, thus, forms and destroys GaN and make gallium (Ga) and nitrogen (N) analysis
The interface 24 gone out.
Above-mentioned interface formation process is for example implemented according to following processing conditions.
Wavelength：532nm
Repetition rate：15kHz
Average output：0.02W
Pulse width：800ps
Optically focused spot diameter：10μm
Process feed speed：45mm/ seconds
Then, implement holding member bonding process, the 1st holding member 4 is bonded in the 1st face 21 of gallium nitride (GaN) ingot 2
On, and the 2nd holding member 5 is bonded on the 2nd face 22.That is, as shown in Fig. 5 (a) and (b), the 1st is kept by wax 6
Part 4 is bonded on the 1st face 21 of gallium nitride (GaN) ingot 2, and the 2nd holding member 5 is bonded in into the 2nd face 22 by wax 6
On.In addition, on wax 6, the wax using melting temperature than temperature (30 DEG C) high (such as 100 DEG C) that gallium (Ga) is melted, wherein, should
Gallium is being internally formed gallium nitride in gallium nitride (GaN) ingot in the above-mentioned interface formation process of embodiment illustrated
(GaN) gallium (Ga) at the interface destroyed and separate out gallium (Ga) and nitrogen (N).
Alternatively, it is also possible to state the 2nd maintaining part in holding member bonding process on the implementation before the formation process of interface
Part 5 is bonded on the 2nd face 22 of gallium nitride (GaN) ingot 2.
After above-mentioned holding member bonding process is implemented, implement gallium nitride base board generation process, by gallium nitride (GaN)
Ingot 2 is heated to the temperature for melting Ga, and makes the 1st holding member 4 and the 2nd holding member 5 to direction away from each other
It is mobile, thus, gallium nitride (GaN) ingot 2 is separated from interface 24 and gallium nitride base board is generated.That is, it is heated to make to form above-mentioned boundary
The temperature that the gallium (Ga) in face 24 is melted, the interface 24, which is formed, is implementing the gallium nitride of above-mentioned holding member bonding process
(GaN) in ingot 2.In addition, in the illustrated embodiment, in above-mentioned holding member bonding process, due to being located in nitridation
Wax used in wax 6 between 1st face 21 of gallium (GaN) ingot 2 and the 1st holding member 4 and the 2nd face 22 and the 2nd holding member 5
Melting temperature is than (30 DEG C) of the temperature high (such as 100 DEG C) that gallium (Ga) is melted, so above-mentioned interface 24 is added by the temperature of wax 6
Heat and as making the state that gallium (Ga) is melted.So, interface 24 is heated and make gallium (Ga) turn into melting shape
After state, such as shown in Fig. 6 (a), the 1st holding member 4 and the 2nd holding member 5 is set to be moved to direction away from each other.Its result
It is that such as shown in Fig. 6 (b), gallium nitride (GaN) ingot 2 is separated into the gallium nitride base for being bonded with the 1st holding member 4 at interface 24
Plate 20 and gallium nitride (GaN) ingot 2 for being bonded with the 2nd holding member 5.As shown in Fig. 6 (c), in being bonded with for being so separated
On the parting surface 2a of gallium nitride (GaN) ingot 2 of the 2nd holding member 5, gallium (Ga) face 241 is formed with, such as shown in Fig. 6 (d),
Ga faces 241 are formed with the parting surface 20a for being bonded with the gallium nitride base board 20 of the 1st holding member 4.As indicated above,
In the illustrated embodiment, gallium nitride (GaN) destruction is made into gallium (Ga) and nitrogen in being internally formed for gallium nitride (GaN) ingot 2
(N) thickness separated out is 10 μm or so of interface 24, so as to generate gallium nitride base board 20, thereby it is entirely avoided because of profit
The cutting swarf cut into slices and given up with wire cutting machine.
Then, grinding process is implemented, to separating out in above-mentioned interface 24 and being formed by gallium nitride base board generation process
Gallium (Ga) face 241 on the parting surface of parting surface and gallium nitride (GaN) ingot 2 of the gallium nitride base board of separation is ground and gone
Remove.Implement the grinding process using the grinding attachment 7 shown in Fig. 7 (a).Grinding attachment 7 shown in Fig. 7 (a) has：Card
Disk workbench 71, it keeps to machined object；And grinding unit 72, it is to the quilt that is maintained on the chuck table 71
Machining object is ground.Chuck table 71 is configured to using machined object attracting holding on the upper surface as retaining surface, and
Rotated by rotary drive mechanism (not shown) according to the direction shown in arrow 71a in Fig. 7 (a).Grinding unit 72 has：It is main
Shaft housing 721；Live spindle 722, it is supported to rotate freely by the main shaft shell 721, and passes through rotation driving (not shown)
Mechanism and rotate；Mounting seat 723, it is arranged on the lower end of the live spindle 722；And grinding emery wheel 724, it is arranged on the peace
Fill the lower surface of seat 723.The grinding emery wheel 724 is arranged on the lower surface of the base station 725 by circular base station 725 and annularly
Grinding grinding tool 726 constitute, base station 725 by fastening bolt 727 be arranged on mounting seat 723 lower surface.
Want to implement to form gallium (Ga) face on the parting surface of gallium nitride base board 20 using 7 pairs above-mentioned of grinding attachment
241 the 1st grinding process for being ground and being removed, then as shown in Fig. 7 (a), chuck work is positioned in by the side of the 1st holding member 4
Make on the upper surface (retaining surface) of platform 71, wherein, the 1st holding member 4 is bonded in by above-mentioned gallium nitride base board generation process
And on the gallium nitride base board 20 separated.Also, by acting attraction unit (not shown) across the 1st holding member 4 by nitrogen
Change the attracting holding of gallium substrate 20 on chuck table 71.Therefore, the gallium (Ga) on the parting surface of gallium nitride base board 20 is formed
Face 241 turns into upside, wherein, the gallium nitride base board 20 is maintained on chuck table 71.So, across the 1st holding member 4
By the attracting holding of gallium nitride base board 20 on chuck table 71 after, while make chuck table 71 according to Fig. 7 (a) and
(b) direction in shown in arrow 71a is rotated with such as 300rpm, while making the grinding emery wheel 724 of grinding unit 72 according to Fig. 7's
(a) rotated with the direction in (b) shown in arrow 724a with such as 6000rpm, shown in such as Fig. 7 (b), make grinding grinding tool 726 with
Gallium (Ga) face 241 on the parting surface as the gallium nitride base board 20 of machined surface is formed to contact, and make grinding emery wheel 724 by
According to shown in arrow 724b in Fig. 7 (a) and (b), with the grinding and feeding speed of such as 1 μm/second downward (with chuck table
The vertical direction of 71 retaining surface) amount (10~20 μm) as defined in grinding and feeding.As a result, as shown in Fig. 7 (c), to shape
The parting surface of gallium nitride base board 20 is ground and will be formed in into gallium (Ga) face 241 on the parting surface in gallium nitride base board 20
Gallium (Ga) face on 20a is removed.
Then, implement the 2nd grinding process using above-mentioned grinding attachment 7, will be formed in by above-mentioned gallium nitride base board
Gallium (Ga) face 241 that generation process is separated and is bonded with the parting surface of gallium nitride (GaN) ingot 2 of the 2nd holding member 5 is removed.
That is, as shown in Fig. 8 (a), the side of the 2nd holding member 5 is positioned on the upper surface of chuck table 71 (retaining surface), wherein,
2nd holding member 5 is bonded on gallium nitride (GaN) ingot 2 separated by above-mentioned gallium nitride base board generation process.Also, it is logical
Cross make it is (not shown) attraction unit act and across the 2nd holding member 5 by the attracting holding of gallium nitride (GaN) ingot 2 in chucking work
On platform 71.Therefore, gallium (Ga) face 241 being formed on the parting surface of gallium nitride (GaN) ingot 2 turns into upside, wherein, the nitridation
Gallium (GaN) ingot 2 is maintained on chuck table 71.So, gallium nitride (GaN) ingot 2 is being attracted across the 2nd holding member 5 to protect
After holding on chuck table 71, while making chuck table 71 according to the direction shown in arrow 71a in Fig. 8 (a) with example
As 300rpm rotation, while make grinding unit 72 grinding emery wheel 724 according to the direction shown in arrow 724a in Fig. 8 (a) with
Such as 6000rpm rotates, shown in such as Fig. 8 (a), makes grinding grinding tool 726 with being formed in the gallium nitride (GaN) as machined surface
Gallium (Ga) face 241 on the parting surface of ingot 2 is contacted, and makes grinding emery wheel 724 according to shown in arrow 724b in Fig. 8 (a), with example
Such as (direction vertical with the retaining surface of chuck table 71) grinding and feeding is provided the grinding and feeding speed of 1 μm/second downward
Amount (10~20 μm).As a result, as shown in Fig. 8 (b), to forming the gallium on the parting surface of gallium nitride (GaN) ingot 2
(Ga) face 241 is ground and will be formed in the removal of gallium (Ga) face on the parting surface 2a of gallium nitride (GaN) ingot 2.
As indicated above, implementing to being formed in the gallium nitride separated by gallium nitride base board generation process
The grinding work that gallium (Ga) face 241 on the parting surface of substrate 20 and on the parting surface of gallium nitride (GaN) ingot 2 is ground and removed
After sequence, implement holding member separation circuit, the 1st holding member 4 being bonded on gallium nitride base board 20 is separated, its
In, the gallium nitride base board 20 is the substrate for eliminating the gallium (Ga) being formed on parting surface.That is, will as shown in Fig. 9 (a)
The side of the 1st holding member 4 for implementing the gallium nitride base board 20 of above-mentioned grinding process is positioned in the holding workbench of stripping off device 8
On 81, and the attracting holding of gallium nitride base board 20 is being protected across the 1st holding member 4 by acting attraction unit (not shown)
Hold on workbench 81.Therefore, the parting surface 20a of gallium nitride base board 20 turns into upside, wherein, the gallium nitride base board 20 is across the 1st
Holding member 4 is maintained on holding workbench 81.Also, making to be disposed in keeps the heater (not shown) on workbench 81 to enter
Action is made and the 1st holding member 4 is heated, and the wax 6 between the 1st holding member 4 and gallium nitride base board 20 is added
Heat arrives melting temperature (such as 100 DEG C).Then, as shown in Fig. 9 (b), the suction surface as lower surface of attracting pad 82 is carried
Put on the upper surface (parting surface 20a) of gallium nitride base board 20, the gallium nitride base board 20 is attracted guarantor across the 1st holding member 4
Hold and keeping on workbench 81, also, inhaled the upper surface of gallium nitride base board 20 by acting attraction unit (not shown)
Draw in the suction surface as lower surface of attracting pad 82.Also, as Fig. 9 (c) shown in, by attracting pad 82 to from keep work
The remote direction pull-up of platform 81, thereby, it is possible to make gallium nitride base board 20 be separated from the 1st holding member 4.
As described above, after 1 gallium nitride base board 20 is generated from gallium nitride (GaN) ingot 2, to remaining nitridation
Gallium (GaN) ingot 2 is repeated 4 times the above-mentioned interface formation process of implementation, is bonded in the 1st holding member 4 and implements interface formation process
Gallium nitride (GaN) ingot 2 the 1st face 21 on holding member bonding process, gallium nitride base board generation process, grinding process and
Holding member separation circuit.As a result, in the illustrated embodiment, the nitrogen that can be 3mm from a diameter of 100mm and thickness
Change gallium (GaN) ingot 2 generate 5 substantially 500 μm of thickness gallium nitride base board 20, with using wire cutting machine cut into slices it is conventional
Processing method compare, productivity improves 2.5 times.
Claims (4)
1. a kind of generation method of gallium nitride base board, multiple gallium nitride base boards are generated by gallium nitride ingot, the gallium nitride ingot has the 1st
Face and the 2nd face of opposite side in the 1st face, it is characterised in that the generation method of the gallium nitride base board has following work
Sequence：
Interface formation process, from the 1st face by the optically focused point location of the laser beam of the wavelength for gallium nitride with permeability
It is irradiated in the inside of gallium nitride ingot, forms the interface that gallium nitride is destroyed and gallium and nitrogen is separated out；
Holding member bonding process, the 1st holding member is bonded on the 1st face of gallium nitride ingot, and by the 2nd holding member
It is bonded on the 2nd face；And
Gallium nitride base board generation process, the temperature that gallium nitride ingot is heated to melt gallium, and make the 1st holding member
Moved with the 2nd holding member to direction away from each other, thus gallium nitride ingot is separated from the interface and gallium nitride base is generated
Plate.
2. the generation method of gallium nitride base board according to claim 1, wherein,
State on the implementation before the formation process of interface, the 2nd holding member in the holding member bonding process is bonded in this
On 2nd face.
3. the generation method of gallium nitride base board according to claim 1 or 2, wherein,
In the holding member bonding process, for the gallium nitride ingot, the 1st holding member is bonded in the 1st face using wax
Above and the 2nd holding member is bonded on the 2nd face, wherein, the wax is in the temperature higher than the temperature that gallium is melted
It is lower to melt.
4. the generation method of gallium nitride base board according to claim 1, wherein,
The generation method of the gallium nitride base board implements following grinding process：To separating out in the interface and being formed by gallium nitride
Substrate formation process and the gallium face on the parting surface of gallium nitride base board that separates are ground and removed.
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| JP2015181950A JP6633326B2 (en) | 2015-09-15 | 2015-09-15 | Method for producing gallium nitride substrate |
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| CN112967948A (en) * | 2020-08-05 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Metal gallium removing device and metal gallium removing method |
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Also Published As
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| TW201713448A (en) | 2017-04-16 |
| TWI689367B (en) | 2020-04-01 |
| JP6633326B2 (en) | 2020-01-22 |
| JP2017057103A (en) | 2017-03-23 |
| KR102428702B1 (en) | 2022-08-02 |
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