TWI685116B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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TWI685116B
TWI685116B TW108104981A TW108104981A TWI685116B TW I685116 B TWI685116 B TW I685116B TW 108104981 A TW108104981 A TW 108104981A TW 108104981 A TW108104981 A TW 108104981A TW I685116 B TWI685116 B TW I685116B
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oxide semiconductor
film
transistor
semiconductor film
insulating film
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TW201921703A (en
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肥塚純一
神長正美
島行徳
黒崎大輔
中田昌孝
山崎舜平
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日商半導體能源研究所股份有限公司
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Abstract

The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

Description

半導體裝置 Semiconductor device

本發明的一個方式係關於一種使用氧化物半導體膜的半導體裝置及使用該半導體裝置的顯示裝置。 One embodiment of the present invention relates to a semiconductor device using an oxide semiconductor film and a display device using the semiconductor device.

注意，本發明的一個方式不侷限於上述技術領域。本說明書等所公開的發明的一個方式的技術領域係關於一種物體、方法或製造方法。或者，本發明係關於一種製程(process)、機器(machine)、產品(manufacture)或組合物(composition of matter)。本發明的一個方式尤其係關於一種半導體裝置、顯示裝置、發光裝置、蓄電裝置、記憶體裝置以及其驅動方法或其製造方法。 Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification and the like relates to an object, method, or manufacturing method. Or, the present invention relates to a process, machine, manufacturing, or composition of matter. One aspect of the present invention is particularly related to a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof.

注意，在本說明書等中，半導體裝置是指能夠藉由利用半導體特性而工作的所有裝置。除了電晶體等半導體元件，半導體電路、算術裝置或記憶體裝置也是半導體裝置的一個方式。攝像裝置、顯示裝置、液晶顯示裝置、發光裝置、電光裝置、發電裝置(包括薄膜太陽能電池、有機薄膜太陽能電池等)及電子裝置有時包括半導體裝置。 Note that in this specification and the like, a semiconductor device refers to all devices that can operate by utilizing semiconductor characteristics. In addition to semiconductor elements such as transistors, semiconductor circuits, arithmetic devices, or memory devices are also a form of semiconductor device. Image pickup devices, display devices, liquid crystal display devices, light emitting devices, electro-optic devices, power generating devices (including thin film solar cells, organic thin film solar cells, etc.) and electronic devices sometimes include semiconductor devices.

藉由利用形成在具有絕緣表面的基板上的半導體薄膜來構成電晶體(也稱為薄膜電晶體(TFT))的技術受到關注。該電晶體被廣泛地應用於如積體電路(IC)、影像顯示裝置(顯示裝置)等電子裝置。作為可以應用於電晶體的半導體薄膜，以矽為代表的半導體材料被周知，而作為其他材料，氧化物半導體受到關注。 The technique of forming a transistor (also called a thin film transistor (TFT)) by using a semiconductor thin film formed on a substrate having an insulating surface has attracted attention. The transistor is widely used in electronic devices such as integrated circuits (ICs) and image display devices (display devices). As semiconductor thin films that can be applied to transistors, semiconductor materials represented by silicon are well known, and as other materials, oxide semiconductors have attracted attention.

例如，專利文獻1公開一種技術，其中作為氧化物半導體使用包含In、Zn、Ga、Sn等的非晶氧化物製造電晶體。 For example, Patent Literature 1 discloses a technique in which an amorphous oxide containing In, Zn, Ga, Sn, or the like is used as an oxide semiconductor to manufacture a transistor.

[專利文獻1]日本專利申請公開第2006-165529號公報 [Patent Document 1] Japanese Patent Application Publication No. 2006-165529

作為使用氧化物半導體膜的電晶體，例如，可以舉出反交錯型(也稱為底閘極結構)或平面型(也稱為頂閘極結構)等。當將使用氧化物半導體膜的電晶體應用於顯示裝置時，反交錯型電晶體比平面型電晶體的製程簡單而可以抑制製造成本，所以利用反交錯型電晶體的情況較多。然而，隨著顯示裝置的螢幕的大型化或顯示裝置的影像的高清晰化(例如，典型為4k×2k(水平方向像素數=3840像素，垂直方向像素數=2160像素)或8k×4k(水平方向像素數=7680像素，垂直方向像素數=4320像素)的高清晰的顯示裝置)，有如下問題：在反交錯型電晶體中，閘極電極與源極電極及汲極電極之間有寄生電容，該寄生電容導致信號延遲等變大，而使顯示裝置的影像品質劣化。另 外，反交錯型電晶體有與平面型電晶體相比電晶體的佔有面積較大的問題。於是，作為使用氧化物半導體膜的平面型電晶體，期待著如下電晶體的開發：具有穩定的半導體特性及較高的可靠性的結構並由簡單的製程形成。 As the transistor using an oxide semiconductor film, for example, an inverted staggered type (also called a bottom gate structure) or a planar type (also called a top gate structure) can be given. When a transistor using an oxide semiconductor film is applied to a display device, the reverse interleaved transistor has a simpler manufacturing process than a planar transistor and can suppress the manufacturing cost, so the reverse interleaved transistor is often used. However, as the screen of the display device becomes larger or the image of the display device becomes higher definition (for example, typically 4k×2k (number of pixels in the horizontal direction=3840 pixels, number of pixels in the vertical direction=2160 pixels) or 8k×4k( High-definition display device with horizontal pixels = 7680 pixels and vertical pixels = 4320 pixels), with the following problems: In the reverse interleaved transistor, there are between the gate electrode and the source electrode and the drain electrode Parasitic capacitance, which increases signal delay and the like, degrades the image quality of the display device. In addition, the reverse staggered transistor has a problem that the transistor occupies a larger area than the planar transistor. Therefore, as a planar transistor using an oxide semiconductor film, development of a transistor that has stable semiconductor characteristics and high reliability and is formed by a simple process is expected.

鑒於上述問題，本發明的一個方式的目的之一是提供一種使用氧化物半導體的新穎的半導體裝置。尤其是，本發明的一個方式的目的之一是提供一種使用氧化物半導體的平面型半導體裝置。另外，本發明的一個方式的目的之一是提供一種使用氧化物半導體的通態電流(on-state current)大的半導體裝置，提供一種使用氧化物半導體的關態電流(off-state current)小的半導體裝置，提供一種使用氧化物半導體的佔有面積小的半導體裝置，提供一種使用氧化物半導體的具有穩定的電特性的半導體裝置，提供一種使用氧化物半導體的可靠性高的半導體裝置，提供一種新穎的半導體裝置，提供一種新穎的顯示裝置。 In view of the above problems, one object of one aspect of the present invention is to provide a novel semiconductor device using an oxide semiconductor. In particular, one of the objects of one aspect of the present invention is to provide a planar semiconductor device using an oxide semiconductor. In addition, one of the objects of one aspect of the present invention is to provide a semiconductor device that uses an oxide semiconductor with a large on-state current and a small off-state current that uses an oxide semiconductor Semiconductor device, providing a semiconductor device using an oxide semiconductor with a small occupied area, providing a semiconductor device using an oxide semiconductor with stable electrical characteristics, providing a highly reliable semiconductor device using an oxide semiconductor, and providing a A novel semiconductor device provides a novel display device.

注意，上述目的的記載不妨礙其他目的的存在。此外，本發明的一個方式並不需要解決所有上述目的。上述以外的目的從說明書等的記載看來顯而易見，且可以從說明書等的記載中抽出上述以外的目的。 Note that the description of the above purpose does not prevent the existence of other purposes. In addition, one aspect of the present invention does not need to solve all the above-mentioned objects. The objects other than the above are apparent from the description of the specification and the like, and the objects other than the above can be extracted from the description of the specification and the like.

本發明的一個方式是包括設置在驅動電路部的第一電晶體及設置在像素部的第二電晶體的半導體裝置，其中第一電晶體與第二電晶體的結構不同。另外，第 一電晶體及第二電晶體是頂閘極結構的電晶體，在各電晶體的氧化物半導體膜中，在不與閘極電極重疊的區域中包含雜質元素。在氧化物半導體膜中，包含雜質元素的區域具有低電阻區域的功能。另外，在氧化物半導體膜中，包含雜質元素的區域與包含氫的膜接觸。另外，也可以包括：在包含氫的膜的開口部中與包含雜質元素的區域接觸的具有源極電極及汲極電極的功能的導電膜。 One embodiment of the present invention is a semiconductor device including a first transistor provided in a drive circuit portion and a second transistor provided in a pixel portion, wherein the first transistor and the second transistor have different structures. In addition, the first transistor and the second transistor are transistors of a top gate structure, and the oxide semiconductor film of each transistor contains an impurity element in a region that does not overlap with the gate electrode. In the oxide semiconductor film, the region containing the impurity element has the function of a low resistance region. In addition, in the oxide semiconductor film, the region containing the impurity element is in contact with the film containing hydrogen. In addition, a conductive film having the functions of a source electrode and a drain electrode in contact with the region containing the impurity element in the opening of the film containing hydrogen may be included.

本發明的一個方式是包括設置在驅動電路部的第一電晶體、設置在像素部的第二電晶體及第三電晶體的半導體裝置，並且至少第二電晶體與第三電晶體的結構不同。另外，第一電晶體至第三電晶體是頂閘極結構的電晶體，在各電晶體的氧化物半導體膜中，在不與閘極電極重疊的區域中包含雜質元素。另外，在氧化物半導體膜中，包含雜質元素的區域與包含氫的膜接觸。另外，也可以包括：在包含氫的膜的開口部中與包含雜質元素的區域接觸的具有源極電極及汲極電極的功能的導電膜。 One embodiment of the present invention is a semiconductor device including a first transistor provided in a driving circuit portion, a second transistor provided in a pixel portion, and a third transistor, and at least the structure of the second transistor and the third transistor is different . In addition, the first to third transistors are transistors of a top gate structure, and the oxide semiconductor film of each transistor contains an impurity element in a region that does not overlap with the gate electrode. In addition, in the oxide semiconductor film, the region containing the impurity element is in contact with the film containing hydrogen. In addition, a conductive film having the functions of a source electrode and a drain electrode in contact with the region containing the impurity element in the opening of the film containing hydrogen may be included.

注意，設置在驅動電路部的第一電晶體也可以包括隔著氧化物半導體膜重疊的兩個閘極電極。 Note that the first transistor provided in the drive circuit section may include two gate electrodes that are overlapped via the oxide semiconductor film.

注意，設置在驅動電路部的第一電晶體及設置在像素部的第三電晶體也可以包括隔著氧化物半導體膜重疊的兩個閘極電極。 Note that the first transistor provided in the driving circuit portion and the third transistor provided in the pixel portion may include two gate electrodes that are overlapped via the oxide semiconductor film.

另外，設置在驅動電路部的第一電晶體可以包括層疊有第一膜及第二膜的氧化物半導體膜，設置在像素部的第二電晶體也可以包括其原子個數比與第一膜的金 屬元素的原子個數比不同的氧化物半導體膜。再者，第二電晶體中的氧化物半導體膜也可以與第一電晶體的氧化物半導體膜中的第二膜的金屬元素的原子個數比相同。 In addition, the first transistor provided in the driving circuit portion may include an oxide semiconductor film laminated with a first film and a second film, and the second transistor provided in the pixel portion may also include an atomic ratio of the first film to the first film Oxide semiconductor films with different atomic ratios of metal elements. Furthermore, the oxide semiconductor film in the second transistor may have the same atomic ratio as the metal element in the second film in the oxide semiconductor film of the first transistor.

另外，設置在像素部的第三電晶體可以包括層疊有第一膜及第二膜的氧化物半導體膜，設置在像素部的第二電晶體也可以包括其原子個數比與第一膜的金屬元素的原子個數比不同的氧化物半導體膜。再者，第二電晶體中的氧化物半導體膜也可以與第三電晶體的氧化物半導體膜中的第二膜的金屬元素的原子個數比相同。 In addition, the third transistor provided in the pixel portion may include an oxide semiconductor film laminated with a first film and a second film, and the second transistor provided in the pixel portion may also include an atomic ratio of the first film to that of the first film. An oxide semiconductor film with different atomic ratios of metal elements. In addition, the oxide semiconductor film in the second transistor may have the same atomic ratio of the metal element of the second film in the oxide semiconductor film of the third transistor.

另外，設置在驅動電路部的第一電晶體及設置在像素部的第三電晶體可以各包括層疊有第一膜及第二膜的氧化物半導體膜，並且第一膜及第二膜的金屬元素的原子個數比也可以不同。 In addition, the first transistor provided in the driving circuit portion and the third transistor provided in the pixel portion may each include an oxide semiconductor film laminated with a first film and a second film, and the metal of the first film and the second film The atomic ratio of elements may also be different.

作為雜質元素，有氫、硼、碳、氮、氟、鋁、矽、磷、氯或稀有氣體元素。 As impurity elements, there are hydrogen, boron, carbon, nitrogen, fluorine, aluminum, silicon, phosphorus, chlorine, or rare gas elements.

在氧化物半導體膜中，藉由包括稀有氣體元素、硼、碳、氮、氟、鋁、矽、磷及氯中的至少一個雜質元素以及氫，導電性得到提高。因此，在氧化物半導體膜中，藉由在不與閘極電極重疊的區域中具有包含該雜質元素的區域，並使包含雜質元素的區域與源極電極及汲極電極接觸，能夠降低電晶體的寄生電阻及寄生電容，而成為通態電流高的電晶體。 In the oxide semiconductor film, the conductivity is improved by including at least one impurity element of rare gas elements, boron, carbon, nitrogen, fluorine, aluminum, silicon, phosphorus, and chlorine, and hydrogen. Therefore, in the oxide semiconductor film, by including a region containing the impurity element in a region that does not overlap with the gate electrode, and bringing the region containing the impurity element into contact with the source electrode and the drain electrode, the transistor can be reduced Parasitic resistance and parasitic capacitance, and become a transistor with high on-state current.

藉由本發明的一個方式，可以提供一種使用氧化物半導體的新穎的半導體裝置。尤其是，可以提供一 種使用氧化物半導體的平面型半導體裝置。可以提供一種使用氧化物半導體的通態電流大的半導體裝置。可以提供一種使用氧化物半導體的關態電流小的半導體裝置。可以提供一種使用氧化物半導體的佔有面積小的半導體裝置。可以提供一種使用氧化物半導體的具有穩定的電特性的半導體裝置。可以提供一種使用氧化物半導體的可靠性高的半導體裝置。可以提供一種新穎的半導體裝置。可以提供一種新穎的顯示裝置。 According to one aspect of the present invention, a novel semiconductor device using an oxide semiconductor can be provided. In particular, a planar semiconductor device using an oxide semiconductor can be provided. A semiconductor device using an oxide semiconductor with a large on-state current can be provided. It is possible to provide a semiconductor device using an oxide semiconductor with a small off-state current. It is possible to provide a semiconductor device using an oxide semiconductor with a small occupied area. It is possible to provide a semiconductor device using an oxide semiconductor and having stable electrical characteristics. It is possible to provide a highly reliable semiconductor device using an oxide semiconductor. A novel semiconductor device can be provided. A novel display device can be provided.

注意，這些效果的記載不妨礙其他效果的存在。本發明的一個方式並不一定必須要具有所有上述效果。另外，說明書、圖式以及申請專利範圍等的記載中顯然存在上述效果以外的效果，可以從說明書、圖式以及申請專利範圍等的記載中獲得上述效果以外的效果。 Note that the description of these effects does not prevent the existence of other effects. One aspect of the present invention does not necessarily have to have all the above-mentioned effects. In addition, it is clear that the descriptions in the description, drawings, and patent application range have effects other than the above effects, and effects other than the above effects can be obtained from the descriptions in the description, drawings, patent application range, and the like.

100a‧‧‧電晶體 100a‧‧‧transistor

100b‧‧‧電晶體 100b‧‧‧transistor

100g‧‧‧電晶體 100g‧‧‧transistor

100h‧‧‧電晶體 100h‧‧‧transistor

100i‧‧‧電晶體 100i‧‧‧transistor

100j‧‧‧電晶體 100j‧‧‧transistor

100k‧‧‧電晶體 100k‧‧‧transistor

100m‧‧‧電晶體 100m‧‧‧transistor

100n‧‧‧電晶體 100n‧‧‧transistor

100s‧‧‧電晶體 100s‧‧‧transistor

100t‧‧‧電晶體 100t‧‧‧transistor

100u‧‧‧電晶體 100u‧‧‧transistor

100v‧‧‧電晶體 100v‧‧‧transistor

100w‧‧‧電晶體 100w‧‧‧transistor

100x‧‧‧電晶體 100x‧‧‧transistor

100y‧‧‧電晶體 100y‧‧‧transistor

100z‧‧‧電晶體 100z‧‧‧transistor

101‧‧‧基板 101‧‧‧ substrate

102‧‧‧導電膜 102‧‧‧conductive film

103‧‧‧導電膜 103‧‧‧ conductive film

104‧‧‧絕緣膜 104‧‧‧Insulation film

104a‧‧‧絕緣膜 104a‧‧‧Insulation film

104b‧‧‧絕緣膜 104b‧‧‧Insulation film

105‧‧‧氧化物半導體膜 105‧‧‧oxide semiconductor film

105a‧‧‧通道區域 105a‧‧‧channel area

105b‧‧‧低電阻區域 105b‧‧‧Low resistance area

105c‧‧‧低電阻區域 105c‧‧‧Low resistance area

106‧‧‧氧化物半導體膜 106‧‧‧oxide semiconductor film

106a‧‧‧通道區域 106a‧‧‧Channel area

106b‧‧‧低電阻區域 106b‧‧‧Low resistance area

106c‧‧‧低電阻區域 106c‧‧‧Low resistance area

107‧‧‧多層膜 107‧‧‧Multilayer film

107a‧‧‧通道區域 107a‧‧‧Channel area

107b‧‧‧低電阻區域 107b‧‧‧Low resistance area

107c‧‧‧低電阻區域 107c‧‧‧Low resistance area

108‧‧‧氧化物半導體膜 108‧‧‧Oxide semiconductor film

108a‧‧‧通道區域 108a‧‧‧Channel area

108b‧‧‧低電阻區域 108b‧‧‧Low resistance area

108c‧‧‧低電阻區域 108c‧‧‧Low resistance area

108d‧‧‧區域 108d‧‧‧Region

108e‧‧‧區域 108e‧‧‧Region

108f‧‧‧低電阻區域 108f‧‧‧Low resistance area

108g‧‧‧低電阻區域 108g‧‧‧Low resistance area

108h‧‧‧低電阻區域 108h‧‧‧Low resistance area

108i‧‧‧低電阻區域 108i‧‧‧Low resistance area

109‧‧‧氧化物半導體膜 109‧‧‧oxide semiconductor film

110‧‧‧多層膜 110‧‧‧Multilayer film

110a‧‧‧通道區域 110a‧‧‧channel area

110b‧‧‧低電阻區域 110b‧‧‧Low resistance area

110c‧‧‧低電阻區域 110c‧‧‧Low resistance area

110u‧‧‧電晶體 110u‧‧‧transistor

111a‧‧‧電晶體 111a‧‧‧Transistor

111b‧‧‧電晶體 111b‧‧‧Transistor

111c‧‧‧電晶體 111c‧‧‧Transistor

111d‧‧‧電晶體 111d‧‧‧transistor

111e‧‧‧電晶體 111e‧‧‧transistor

111f‧‧‧電晶體 111f‧‧‧Transistor

111g‧‧‧電晶體 111g‧‧‧transistor

111h‧‧‧電晶體 111h‧‧‧Transistor

111i‧‧‧電晶體 111i‧‧‧transistor

111j‧‧‧電晶體 111j‧‧‧transistor

111k‧‧‧電晶體 111k‧‧‧transistor

111m‧‧‧電晶體 111m‧‧‧transistor

111w‧‧‧電晶體 111w‧‧‧transistor

111x‧‧‧電晶體 111x‧‧‧Transistor

111y‧‧‧電晶體 111y‧‧‧transistor

113‧‧‧開口部 113‧‧‧ opening

114‧‧‧開口部 114‧‧‧ opening

115‧‧‧絕緣膜 115‧‧‧Insulating film

116‧‧‧絕緣膜 116‧‧‧Insulation film

117‧‧‧絕緣膜 117‧‧‧Insulation film

117a‧‧‧絕緣膜 117a‧‧‧Insulation film

117b‧‧‧絕緣膜 117b‧‧‧Insulating film

118‧‧‧絕緣膜 118‧‧‧Insulation film

119‧‧‧導電膜 119‧‧‧ conductive film

119a‧‧‧導電膜 119a‧‧‧conductive film

119b‧‧‧導電膜 119b‧‧‧conductive film

120‧‧‧導電膜 120‧‧‧conductive film

120a‧‧‧導電膜 120a‧‧‧conductive film

120b‧‧‧導電膜 120b‧‧‧conductive film

121‧‧‧導電膜 121‧‧‧conductive film

121a‧‧‧導電膜 121a‧‧‧conductive film

121b‧‧‧導電膜 121b‧‧‧conductive film

122‧‧‧遮罩 122‧‧‧Mask

123‧‧‧遮罩 123‧‧‧Mask

124‧‧‧遮罩 124‧‧‧Mask

125‧‧‧雜質元素 125‧‧‧ Impurity elements

126‧‧‧絕緣膜 126‧‧‧Insulation film

127‧‧‧絕緣膜 127‧‧‧Insulation film

128‧‧‧開口部 128‧‧‧Opening

129‧‧‧開口部 129‧‧‧ opening

130‧‧‧開口部 130‧‧‧Opening

131‧‧‧開口部 131‧‧‧ opening

132‧‧‧開口部 132‧‧‧Opening

133‧‧‧開口部 133‧‧‧ opening

134‧‧‧導電膜 134‧‧‧ conductive film

135‧‧‧導電膜 135‧‧‧ conductive film

136‧‧‧導電膜 136‧‧‧ conductive film

137‧‧‧導電膜 137‧‧‧ conductive film

138‧‧‧導電膜 138‧‧‧ conductive film

139‧‧‧導電膜 139‧‧‧ conductive film

141‧‧‧絕緣膜 141‧‧‧Insulating film

142‧‧‧氧化物半導體膜 142‧‧‧oxide semiconductor film

142a‧‧‧通道區域 142a‧‧‧channel area

142b‧‧‧低電阻區域 142b‧‧‧Low resistance area

142c‧‧‧低電阻區域 142c‧‧‧Low resistance area

143‧‧‧氧化物半導體膜 143‧‧‧oxide semiconductor film

143a‧‧‧通道區域 143a‧‧‧channel area

143b‧‧‧低電阻區域 143b‧‧‧Low resistance area

143c‧‧‧低電阻區域 143c‧‧‧Low resistance area

144‧‧‧氧化物半導體膜 144‧‧‧oxide semiconductor film

144a‧‧‧通道區域 144a‧‧‧channel area

144b‧‧‧低電阻區域 144b‧‧‧Low resistance area

144c‧‧‧低電阻區域 144c‧‧‧Low resistance area

145‧‧‧氧化物半導體膜 145‧‧‧oxide semiconductor film

145a‧‧‧通道區域 145a‧‧‧channel area

145b‧‧‧低電阻區域 145b‧‧‧Low resistance area

145c‧‧‧低電阻區域 145c‧‧‧Low resistance area

145d‧‧‧膜 145d‧‧‧membrane

146‧‧‧氧化物半導體膜 146‧‧‧oxide semiconductor film

146a‧‧‧通道區域 146a‧‧‧channel area

146b‧‧‧低電阻區域 146b‧‧‧Low resistance area

146c‧‧‧低電阻區域 146c‧‧‧Low resistance area

146d‧‧‧氧 146d‧‧‧Oxygen

147‧‧‧多層膜 147‧‧‧Multilayer film

147a‧‧‧通道區域 147a‧‧‧channel area

147b‧‧‧低電阻區域 147b‧‧‧Low resistance area

147c‧‧‧低電阻區域 147c‧‧‧Low resistance area

148‧‧‧氧化物半導體膜 148‧‧‧oxide semiconductor film

148a‧‧‧通道區域 148a‧‧‧channel area

148b‧‧‧低電阻區域 148b‧‧‧Low resistance area

148c‧‧‧低電阻區域 148c‧‧‧Low resistance area

149‧‧‧氧化物半導體膜 149‧‧‧oxide semiconductor film

149a‧‧‧通道區域 149a‧‧‧channel area

149b‧‧‧低電阻區域 149b‧‧‧Low resistance area

149c‧‧‧低電阻區域 149c‧‧‧Low resistance area

161‧‧‧氮化物絕緣膜 161‧‧‧ nitride insulating film

162‧‧‧氮化物絕緣膜 162‧‧‧Nitride insulating film

500‧‧‧FET 500‧‧‧FET

501‧‧‧基板 501‧‧‧ substrate

502‧‧‧基板 502‧‧‧ substrate

504B‧‧‧發光元件 504B‧‧‧Lighting element

504G‧‧‧發光元件 504G‧‧‧Lighting element

504R‧‧‧發光元件 504R‧‧‧Lighting element

504W‧‧‧發光元件 504W‧‧‧Lighting element

506‧‧‧導電膜 506‧‧‧conductive film

506a‧‧‧導電膜 506a‧‧‧conductive film

507‧‧‧導電膜 507‧‧‧ conductive film

508‧‧‧分隔壁 508‧‧‧Partition wall

509‧‧‧結構體 509‧‧‧Structure

510‧‧‧EL層 510‧‧‧EL layer

512‧‧‧導電膜 512‧‧‧ conductive film

514B‧‧‧彩色層 514B‧‧‧Color layer

514G‧‧‧彩色層 514G‧‧‧Color layer

514R‧‧‧彩色層 514R‧‧‧Color layer

516‧‧‧基板 516‧‧‧ substrate

518‧‧‧封止膜 518‧‧‧Sealing film

522‧‧‧電晶體 522‧‧‧Transistor

541‧‧‧像素電路 541‧‧‧ pixel circuit

542‧‧‧像素部 542‧‧‧Pixel Department

544‧‧‧驅動電路部 544‧‧‧Drive Circuit Department

544a‧‧‧閘極驅動器 544a‧‧‧Gate driver

544b‧‧‧源極驅動器 544b ‧‧‧ source driver

546‧‧‧保護電路 546‧‧‧Protection circuit

547‧‧‧端子部 547‧‧‧Terminal

550‧‧‧電晶體 550‧‧‧transistor

552‧‧‧電晶體 552‧‧‧Transistor

554‧‧‧電晶體 554‧‧‧Transistor

556‧‧‧電晶體 556‧‧‧Transistor

560‧‧‧電容元件 560‧‧‧capacitor element

562‧‧‧電容元件 562‧‧‧capacitor element

570‧‧‧液晶元件 570‧‧‧Liquid crystal element

572‧‧‧發光元件 572‧‧‧Lighting element

600‧‧‧外殼 600‧‧‧Housing

601‧‧‧顯示部 601‧‧‧Display

602‧‧‧顯示部 602‧‧‧Display

603‧‧‧揚聲器 603‧‧‧speaker

604‧‧‧LED燈 604‧‧‧LED light

605‧‧‧操作鍵 605‧‧‧Operation keys

606‧‧‧連接端子 606‧‧‧Connecting terminal

607‧‧‧感測器 607‧‧‧Sensor

608‧‧‧麥克風 608‧‧‧Microphone

609‧‧‧開關 609‧‧‧switch

610‧‧‧可攜式資訊終端 610‧‧‧portable information terminal

612‧‧‧顯示部 612‧‧‧Display

613‧‧‧鉸鏈 613‧‧‧Hinges

615‧‧‧外殼 615‧‧‧Housing

620‧‧‧紅外線埠 620‧‧‧Infrared port

621‧‧‧儲存介質讀取部 621‧‧‧Storage media reading department

627‧‧‧充電器 627‧‧‧ Charger

700‧‧‧顯示裝置 700‧‧‧Display device

700a‧‧‧顯示裝置 700a‧‧‧Display device

701‧‧‧基板 701‧‧‧ substrate

702‧‧‧像素部 702‧‧‧Pixel Department

704‧‧‧源極驅動電路部 704‧‧‧ Source drive circuit

705‧‧‧基板 705‧‧‧ substrate

706‧‧‧閘極驅動電路部 706‧‧‧ Gate drive circuit

708‧‧‧FPC端子部 708‧‧‧FPC terminal

710‧‧‧信號線 710‧‧‧Signal cable

711‧‧‧佈線部 711‧‧‧Wiring Department

712‧‧‧密封材料 712‧‧‧Sealing material

716‧‧‧FPC 716‧‧‧FPC

719‧‧‧絕緣膜 719‧‧‧Insulating film

720‧‧‧黏合劑 720‧‧‧Binder

730‧‧‧絕緣膜 730‧‧‧Insulation film

732‧‧‧密封膜 732‧‧‧Seal film

734‧‧‧絕緣膜 734‧‧‧Insulating film

736‧‧‧彩色膜 736‧‧‧Color film

738‧‧‧遮光膜 738‧‧‧shading film

739‧‧‧絕緣膜 739‧‧‧Insulation film

740‧‧‧黏合劑 740‧‧‧adhesive

750‧‧‧電晶體 750‧‧‧Transistor

752‧‧‧電晶體 752‧‧‧Transistor

760‧‧‧連接電極 760‧‧‧Electrode

766‧‧‧絕緣膜 766‧‧‧Insulating film

770‧‧‧平坦化絕緣膜 770‧‧‧flat insulating film

772‧‧‧導電膜 772‧‧‧conductive film

774‧‧‧導電膜 774‧‧‧ conductive film

775‧‧‧液晶元件 775‧‧‧Liquid crystal element

776‧‧‧液晶層 776‧‧‧Liquid crystal layer

778‧‧‧結構體 778‧‧‧Structure

780‧‧‧異方性導電膜 780‧‧‧Anisotropic conductive film

782‧‧‧發光元件 782‧‧‧Lighting element

784‧‧‧導電膜 784‧‧‧ conductive film

786‧‧‧EL層 786‧‧‧EL layer

788‧‧‧導電膜 788‧‧‧ conductive film

790‧‧‧電容元件 790‧‧‧capacitor element

5100‧‧‧顆粒 5100‧‧‧Particles

5120‧‧‧基板 5120‧‧‧ substrate

5161‧‧‧區域 5161‧‧‧Region

8000‧‧‧顯示模組 8000‧‧‧Display module

8001‧‧‧上蓋 8001‧‧‧Top cover

8002‧‧‧下蓋 8002‧‧‧ Lower cover

8003‧‧‧FPC 8003‧‧‧FPC

8004‧‧‧觸控面板 8004‧‧‧Touch panel

8005‧‧‧FPC 8005‧‧‧FPC

8006‧‧‧顯示面板 8006‧‧‧Display panel

8007‧‧‧背光 8007‧‧‧Backlight

8008‧‧‧光源 8008‧‧‧Light source

8009‧‧‧框架 8009‧‧‧Frame

8010‧‧‧印刷基板 8010‧‧‧ printed circuit board

8011‧‧‧電池 8011‧‧‧Battery

在圖式中：圖1A和圖1B是說明半導體裝置的一個方式的俯視圖；圖2A和圖2B是說明半導體裝置的一個方式的剖面圖；圖3A和圖3B是說明半導體裝置的一個方式的剖面圖；圖4A至圖4C是說明半導體裝置的製造方法的一個方式的剖面圖； 圖5A至圖5C是說明半導體裝置的製造方法的一個方式的剖面圖；圖6A和圖6B是說明半導體裝置的製造方法的一個方式的剖面圖；圖7A和圖7B是說明半導體裝置的一個方式的俯視圖；圖8A和圖8B是說明半導體裝置的一個方式的剖面圖；圖9A和圖9B是說明半導體裝置的一個方式的剖面圖；圖10A和圖10B是說明半導體裝置的一個方式的剖面圖；圖11A至圖11C是說明半導體裝置的一個方式的俯視圖；圖12是說明半導體裝置的一個方式的剖面圖；圖13是說明半導體裝置的一個方式的剖面圖；圖14是說明半導體裝置的一個方式的剖面圖；圖15是說明半導體裝置的一個方式的剖面圖；圖16是說明半導體裝置的一個方式的剖面圖；圖17是說明半導體裝置的一個方式的剖面圖；圖18A至圖18C是說明半導體裝置的一個方式的俯視圖；圖19是說明半導體裝置的一個方式的剖面圖；圖20是說明半導體裝置的一個方式的剖面圖； 圖21A至圖21C是說明半導體裝置的一個方式的俯視圖；圖22是說明半導體裝置的一個方式的剖面圖；圖23是說明半導體裝置的一個方式的剖面圖；圖24A和圖24B是說明半導體裝置的製造方法的一個方式的剖面圖；圖25A和圖25B是說明半導體裝置的製造方法的一個方式的剖面圖；圖26A和圖26B是說明半導體裝置的製造方法的一個方式的剖面圖；圖27A和圖27B是說明半導體裝置的製造方法的一個方式的剖面圖；圖28A和圖28B是說明根據本發明的一個方式的電晶體的能帶結構的圖；圖29A至圖29F是說明電晶體的結構的剖面圖；圖30A至圖30F是說明電晶體的結構的剖面圖；圖31A至圖31E是說明電晶體的結構的剖面圖；圖32A和圖32B是說明電晶體的結構的剖面圖；圖33A至圖33D是說明電晶體的結構的剖面圖；圖34A和圖34B是說明電晶體的製程的剖面圖；圖35是說明計算模型的圖；圖36A和圖36B是說明初始狀態及最終狀態的圖；圖37是說明活化能的圖；圖38A和圖38B是說明初始狀態及最終狀態的圖； 圖39是說明活化能的圖；圖40是說明VOH的遷移能階的圖；圖41A至圖41D是說明顯示裝置的方塊圖及電路圖；圖42是說明顯示裝置的一個方式的俯視圖；圖43A和圖43B是說明顯示裝置的一個方式的剖面圖；圖44A和圖44B是說明顯示裝置的一個方式的剖面圖；圖45是說明發光裝置的像素部的結構的剖面圖；圖46是說明顯示模組的圖；圖47A至圖47G是說明電子裝置的圖；圖48是說明電阻率的溫度依賴性的圖；圖49A至圖49D是CAAC-OS的剖面的Cs校正高解析度TEM影像以及CAAC-OS的剖面示意圖；圖50A至圖50D是CAAC-OS的平面的Cs校正高解析度TEM影像；圖51A至圖51C是說明藉由XRD得到的CAAC-OS以及單晶氧化物半導體的結構分析的圖；圖52A和圖52B是示出CAAC-OS的電子繞射圖案的圖；圖53是示出藉由電子照射的In-Ga-Zn氧化物的結晶部的變化的圖。 In the drawings: FIGS. 1A and 1B are plan views illustrating one mode of the semiconductor device; FIGS. 2A and 2B are cross-sectional views illustrating one mode of the semiconductor device; FIGS. 3A and 3B are cross-sections illustrating one mode of the semiconductor device 4A to 4C are cross-sectional views illustrating a method of manufacturing a semiconductor device; FIGS. 5A to 5C are cross-sectional views illustrating a method of manufacturing a semiconductor device; FIGS. 6A and 6B are views illustrating a semiconductor device 7A and 7B are plan views illustrating a mode of a semiconductor device; FIGS. 8A and 8B are cross-sectional views illustrating a mode of a semiconductor device; FIGS. 9A and 9B are views illustrating a semiconductor device 10A and 10B are cross-sectional views illustrating a mode of a semiconductor device; FIGS. 11A to 11C are plan views illustrating a mode of a semiconductor device; FIG. 12 is a cross-sectional view illustrating a mode of a semiconductor device; 13 is a cross-sectional view illustrating one aspect of a semiconductor device; FIG. 14 is a cross-sectional view illustrating one aspect of a semiconductor device; FIG. 15 is a cross-sectional view illustrating one aspect of a semiconductor device; FIG. 16 is a cross-sectional view illustrating one aspect of a semiconductor device FIG. 17 is a cross-sectional view illustrating a mode of a semiconductor device; FIGS. 18A to 18C are plan views illustrating a mode of a semiconductor device; FIG. 19 is a cross-sectional view illustrating a mode of a semiconductor device; 21A to 21C are plan views illustrating one aspect of a semiconductor device; FIG. 22 is a sectional view illustrating one aspect of a semiconductor device; FIG. 23 is a sectional view illustrating one aspect of a semiconductor device; FIG. 24A and FIG. 24B is a cross-sectional view illustrating a method of manufacturing a semiconductor device; FIGS. 25A and 25B are cross-sectional views illustrating a method of manufacturing a semiconductor device; FIGS. 26A and 26B are a method of manufacturing a semiconductor device. FIGS. 27A and 27B are sectional views illustrating one mode of the manufacturing method of the semiconductor device; FIGS. 28A and 28B are diagrams illustrating the band structure of the transistor according to one embodiment of the present invention; FIGS. 29A to 29B 29F is a cross-sectional view illustrating the structure of the transistor; FIGS. 30A to 30F are cross-sectional views illustrating the structure of the transistor; FIGS. 31A to 31E are cross-sectional views illustrating the structure of the transistor; FIGS. 32A and 32B are illustrating the transistor 33A to 33D are sectional views illustrating the structure of the transistor; FIGS. 34A and 34B are sectional views illustrating the manufacturing process of the transistor; FIG. 35 is a diagram illustrating the calculation model; FIGS. 36A and 36B Is a diagram illustrating the initial state and the final state; FIG. 37 is a diagram illustrating the activation energy; FIGS. 38A and 38B are diagrams illustrating the initial state and the final state; FIG. 39 is a diagram illustrating the activation energy; FIG. 40 is a diagram illustrating V O H 41A to 41D are block diagrams and circuit diagrams illustrating the display device; FIG. 42 is 43A and 43B are cross-sectional views illustrating one mode of the display device; FIGS. 44A and 44B are cross-sectional views illustrating one mode of the display device; FIG. 45 is a pixel portion illustrating the light-emitting device 46 is a diagram illustrating a display module; FIGS. 47A to 47G are diagrams illustrating an electronic device; FIG. 48 is a diagram illustrating the temperature dependence of resistivity; FIGS. 49A to 49D are CAAC-OS The Cs corrected high-resolution TEM image of the cross section and the schematic cross-sectional view of CAAC-OS; FIGS. 50A to 50D are the Cs corrected high-resolution TEM image of the plane of CAAC-OS; FIGS. 51A to 51C are obtained by XRD. CAAC-OS and the structure analysis diagram of the single crystal oxide semiconductor; FIGS. 52A and 52B are diagrams showing the electron diffraction pattern of CAAC-OS; FIG. 53 is a diagram showing In-Ga-Zn oxidation by electron irradiation Diagram of the change of the crystal part of the object.

下面，參照圖式詳細說明本發明的實施方式。但是，本發明不侷限於以下說明，所屬技術領域的普通技術人員可以很容易地理解一個事實就是其方式及詳細內容在不脫離本發明的精神及其範圍的情況下可以被變換為各種各樣的形式。因此，本發明不應該被解釋為僅限定在以下所示的實施方式所記載的內容中。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and those of ordinary skill in the art can easily understand the fact that the manner and details can be transformed into various forms without departing from the spirit and scope of the present invention form. Therefore, the present invention should not be interpreted as being limited to the contents described in the embodiments shown below.

另外，為了便於理解，有時在圖式等中示出的各結構的位置、大小及範圍等並不表示其實際的位置、大小及範圍等。因此，所公開的發明不一定侷限於圖式等所公開的位置、大小、範圍等。 In addition, for ease of understanding, the positions, sizes, and ranges of the various structures shown in the drawings and the like may not indicate the actual positions, sizes, and ranges. Therefore, the disclosed invention is not necessarily limited to the positions, sizes, ranges, etc. disclosed in the drawings and the like.

另外，在本說明書等中使用的“第一”、“第二”、“第三”等序數詞是為了方便識別構成要素而附的，而不是為了在數目方面上進行限定的。 In addition, ordinal numbers such as “first”, “second”, and “third” used in this specification and the like are attached to facilitate identification of constituent elements, and are not intended to be limited in number.

在本說明書等中，“上”或“下”不侷限於構成要素的位置關係為“直接在...之上”或“直接在...之下”。例如，“閘極絕緣膜上的閘極電極”包括在閘極絕緣層和閘極電極之間包含其他構成要素的情況。 In this specification and the like, "upper" or "lower" is not limited to the positional relationship of the constituent elements being "directly above" or "directly below". For example, “gate electrode on gate insulating film” includes the case where other constituent elements are included between the gate insulating layer and the gate electrode.

另外，在本說明書等中，“電極”或“佈線”不在功能上限定其構成要素。例如，有時將“電極”用作“佈線”的一部分，反之亦然。再者，“電極”或“佈線”還包括多個“電極”或“佈線”被形成為一體的情況等。 In addition, in this specification and the like, “electrode” or “wiring” does not functionally limit its constituent elements. For example, sometimes "electrodes" are used as part of "wiring" and vice versa. In addition, "electrode" or "wiring" also includes the case where a plurality of "electrodes" or "wiring" are formed as one body.

另外，在使用極性不同的電晶體的情況或在電路工作中在電流方向變化的情況等下，“源極”及“汲極” 的功能有時被互相調換。因此，在本說明書等中，“源極”和“汲極”可以被互相調換。 In addition, the functions of "source" and "drain" may be interchanged when using transistors with different polarities or when the direction of current changes during circuit operation. Therefore, in this specification and the like, "source" and "drain" can be interchanged with each other.

注意，在本說明書等中，“電連接”包括隔著“具有某種電作用的元件”連接的情況。在此，“具有某種電作用的元件”只要可以進行連接目標間的電信號的發送和接收，就對其沒有特別的限制。例如，“具有某種電作用的元件”不僅包括電極和佈線，而且還包括電晶體等切換元件、電阻元件、電感器、電容器、其他具有各種功能的元件等。 Note that in this specification and the like, "electrical connection" includes the case of being connected via "elements having a certain electric action". Here, the “element having a certain electrical function” is not particularly limited as long as it can transmit and receive electrical signals between the connected targets. For example, "element with a certain electrical effect" includes not only electrodes and wiring, but also switching elements such as transistors, resistance elements, inductors, capacitors, and other elements with various functions.

實施方式1 Embodiment 1

在本實施方式中，參照圖1A至圖10B對半導體裝置及半導體裝置的製造方法的一個方式進行說明。 In this embodiment, one aspect of a semiconductor device and a method of manufacturing the semiconductor device will be described with reference to FIGS. 1A to 10B.

〈半導體裝置的結構1〉 <Structure 1 of Semiconductor Device>

圖1A至圖2B示出頂閘極結構的電晶體作為包括在半導體裝置中的電晶體的一個例子。在此，作為半導體裝置的一個例子，對顯示裝置進行說明。另外，說明分別設置在顯示裝置的驅動電路部及像素部的電晶體的結構。在本實施方式中，設置在驅動電路部的電晶體與設置在像素部的電晶體的不同之處在於氧化物半導體膜的結構。 FIGS. 1A to 2B show a transistor of a top gate structure as an example of a transistor included in a semiconductor device. Here, as an example of a semiconductor device, a display device will be described. In addition, the structure of the transistors respectively provided in the drive circuit portion and the pixel portion of the display device will be described. In the present embodiment, the transistor provided in the drive circuit portion differs from the transistor provided in the pixel portion in the structure of the oxide semiconductor film.

圖1A和圖1B示出設置在驅動電路部的電晶體100g及設置在像素部的電晶體100h的俯視圖，圖2A和圖2B示出電晶體100g、100h的剖面圖。圖1A是電晶 體100g的俯視圖，圖1B是電晶體100h的俯視圖。圖2A是圖1A的點劃線A-B間的剖面圖以及圖1B的點劃線C-D間的剖面圖。圖2B是圖1A的點劃線G-H間的剖面圖以及圖1B的點劃線I-J間的剖面圖。注意，在圖1A和圖1B中，為了明確起見，省略基板101、絕緣膜104、絕緣膜126、絕緣膜127等。另外，圖2A是電晶體100g、100h的通道長度方向上的剖面圖。此外，圖2B是電晶體100g、100h的通道寬度方向上的剖面圖。 FIGS. 1A and 1B show plan views of a transistor 100g provided in the drive circuit portion and a transistor 100h provided in the pixel portion, and FIGS. 2A and 2B show cross-sectional views of the transistors 100g and 100h. Fig. 1A is a plan view of a transistor 100g, and Fig. 1B is a plan view of a transistor 100h. FIG. 2A is a cross-sectional view taken along the dash-dot line A-B in FIG. 1A and a cross-sectional view taken along the dash-dot line C-D in FIG. 1B. FIG. 2B is a cross-sectional view taken along the dot-dash line G-H in FIG. 1A and a cross-sectional view taken along the dot-dash line I-J in FIG. 1B. Note that in FIGS. 1A and 1B, for the sake of clarity, the substrate 101, the insulating film 104, the insulating film 126, the insulating film 127, and the like are omitted. 2A is a cross-sectional view in the channel length direction of transistors 100g and 100h. 2B is a cross-sectional view in the channel width direction of transistors 100g and 100h.

注意，在後面的俯視圖中有時也與電晶體100g及電晶體100h同樣地省略構成要素的一部分。另外，有時將點劃線A-B方向及點劃線C-D方向稱為通道長度方向，並將點劃線G-H方向及點劃線I-J方向稱為通道寬度方向。 Note that in a plan view later, part of the constituent elements may be omitted in the same manner as the transistor 100g and the transistor 100h. In addition, the dash-dot line A-B direction and the dash-dot line C-D direction are sometimes referred to as the channel length direction, and the dash-dot line G-H direction and the dash-dot line I-J direction are referred to as the channel width direction.

圖2A和圖2B所示的電晶體100g包括：形成在基板101上的絕緣膜104上的多層膜107；接觸於多層膜107的絕緣膜116；以及隔著絕緣膜116與多層膜107重疊的導電膜119。導電膜119具有閘極電極的功能。絕緣膜116具有閘極絕緣膜的功能。多層膜107包括通道區域107a及低電阻區域107b、107c。此外，通道區域107a包括接觸於絕緣膜104的通道區域105a及接觸於通道區域105a的通道區域106a。低電阻區域107b包括接觸於絕緣膜104的低電阻區域105b及接觸於低電阻區域105b的低電阻區域106b。低電阻區域107c包括接觸於絕緣膜104的低電阻區域105c及接觸於低電阻區域105c的低電 阻區域106c。注意，雖然在圖2A和圖2B中未圖示，但是將包括通道區域105a、低電阻區域105b及低電阻區域105c的氧化物半導體膜稱為氧化物半導體膜105，並將包括通道區域106a、低電阻區域106b及低電阻區域106c的氧化物半導體膜稱為氧化物半導體膜106。也就是說，多層膜107層疊有氧化物半導體膜105及氧化物半導體膜106。 The transistor 100g shown in FIGS. 2A and 2B includes: a multilayer film 107 formed on the insulating film 104 on the substrate 101; an insulating film 116 contacting the multilayer film 107; and a layer overlapping the multilayer film 107 via the insulating film 116 Conductive film 119. The conductive film 119 has the function of a gate electrode. The insulating film 116 has the function of a gate insulating film. The multilayer film 107 includes a channel region 107a and low resistance regions 107b and 107c. In addition, the channel region 107a includes a channel region 105a contacting the insulating film 104 and a channel region 106a contacting the channel region 105a. The low resistance region 107b includes a low resistance region 105b contacting the insulating film 104 and a low resistance region 106b contacting the low resistance region 105b. The low resistance region 107c includes a low resistance region 105c contacting the insulating film 104 and a low resistance region 106c contacting the low resistance region 105c. Note that although not shown in FIGS. 2A and 2B, the oxide semiconductor film including the channel region 105a, the low resistance region 105b, and the low resistance region 105c is referred to as an oxide semiconductor film 105, and will include the channel region 106a, The oxide semiconductor films of the low resistance region 106b and the low resistance region 106c are called oxide semiconductor films 106. In other words, the oxide semiconductor film 105 and the oxide semiconductor film 106 are stacked on the multilayer film 107.

注意，在俯視形狀中，氧化物半導體膜106的端部位於氧化物半導體膜105的端部的外側。也就是說，氧化物半導體膜106覆蓋氧化物半導體膜105的頂面及側面。 Note that in the plan view shape, the end of the oxide semiconductor film 106 is located outside the end of the oxide semiconductor film 105. That is, the oxide semiconductor film 106 covers the top surface and side surfaces of the oxide semiconductor film 105.

另外，在電晶體100g中，設置有接觸於低電阻區域107b、107c的絕緣膜126。此外，也可以在絕緣膜126上設置絕緣膜127。另外，設置有在絕緣膜126及絕緣膜127的開口部128、129中接觸於多層膜107的低電阻區域107b、107c的導電膜134、135。 In addition, an insulating film 126 in contact with the low-resistance regions 107b and 107c is provided in the transistor 100g. In addition, an insulating film 127 may be provided on the insulating film 126. In addition, the conductive films 134 and 135 that contact the low-resistance regions 107 b and 107 c of the multilayer film 107 in the openings 128 and 129 of the insulating film 126 and the insulating film 127 are provided.

電晶體100h包括：形成於基板101上的絕緣膜104之上的氧化物半導體膜108；接觸於氧化物半導體膜108的絕緣膜117；以及隔著絕緣膜117與氧化物半導體膜108重疊的導電膜120。 The transistor 100h includes: an oxide semiconductor film 108 formed on the insulating film 104 on the substrate 101; an insulating film 117 in contact with the oxide semiconductor film 108; and a conductive layer overlapping the oxide semiconductor film 108 via the insulating film 117膜120。 The film 120.

導電膜120具有閘極電極的功能。另外，絕緣膜117具有閘極絕緣膜的功能。 The conductive film 120 has the function of a gate electrode. In addition, the insulating film 117 has the function of a gate insulating film.

氧化物半導體膜108包括：與導電膜120重疊的通道區域108a；以及夾著該通道區域108a的低電阻 區域108b、108c。 The oxide semiconductor film 108 includes: a channel region 108a overlapping the conductive film 120; and low resistance regions 108b and 108c sandwiching the channel region 108a.

另外，在電晶體100h中，設置有接觸於低電阻區域108b、108c的絕緣膜126。此外，也可以在絕緣膜126上設置絕緣膜127。另外，設置有在絕緣膜126及絕緣膜127的開口部130、131中接觸於氧化物半導體膜108的低電阻區域108b、108c的導電膜136、137。 In addition, an insulating film 126 in contact with the low-resistance regions 108b and 108c is provided in the transistor 100h. In addition, an insulating film 127 may be provided on the insulating film 126. In addition, the conductive films 136 and 137 contacting the low-resistance regions 108 b and 108 c of the oxide semiconductor film 108 in the openings 130 and 131 of the insulating film 126 and the insulating film 127 are provided.

注意，較佳為以覆蓋導電膜134、135、136、137的方式設置氮化物絕緣膜162。藉由設置氮化物絕緣膜162，能夠防止來自外部的雜質擴散。 Note that it is preferable to provide the nitride insulating film 162 so as to cover the conductive films 134, 135, 136, and 137. By providing the nitride insulating film 162, the diffusion of impurities from the outside can be prevented.

在電晶體100g及電晶體100h中，多層膜107中的氧化物半導體膜105與氧化物半導體膜108的組成不同。另一方面，多層膜107中的氧化物半導體膜106與氧化物半導體膜108的組成相同。也就是說，氧化物半導體膜105及氧化物半導體膜108藉由不同的製程形成，而氧化物半導體膜106及氧化物半導體膜108藉由相同的製程形成。 In the transistor 100g and the transistor 100h, the composition of the oxide semiconductor film 105 and the oxide semiconductor film 108 in the multilayer film 107 are different. On the other hand, the oxide semiconductor film 106 and the oxide semiconductor film 108 in the multilayer film 107 have the same composition. That is, the oxide semiconductor film 105 and the oxide semiconductor film 108 are formed by different processes, and the oxide semiconductor film 106 and the oxide semiconductor film 108 are formed by the same process.

在電晶體100g中，通道形成在氧化物半導體膜105中。因此，氧化物半導體膜105比氧化物半導體膜106厚。 In the transistor 100g, a channel is formed in the oxide semiconductor film 105. Therefore, the oxide semiconductor film 105 is thicker than the oxide semiconductor film 106.

氧化物半導體膜105的厚度為3nm以上且200nm以下，或10nm以上且50nm以下，或20nm以上且35nm以下。氧化物半導體膜106、108的厚度為3nm以上且200nm以下，或3nm以上且100nm以下，或10nm以上且100nm以下，或30nm以上且50nm以下。 The thickness of the oxide semiconductor film 105 is 3 nm or more and 200 nm or less, or 10 nm or more and 50 nm or less, or 20 nm or more and 35 nm or less. The thickness of the oxide semiconductor films 106 and 108 is 3 nm or more and 200 nm or less, or 3 nm or more and 100 nm or less, or 10 nm or more and 100 nm or less, or 30 nm or more and 50 nm or less.

氧化物半導體膜105、106、108由至少包含In的金屬氧化物形成，典型的是由In-Ga氧化物、In-M-Zn氧化物(M為Mg、Al、Ti、Ga、Y、Zr、La、Ce、Nd或Hf)等形成。藉由使氧化物半導體膜105的銦含量多於氧化物半導體膜106，能夠在電晶體100g中形成埋入通道。因此，能夠降低電晶體100g的臨界電壓的變動，並可以降低通道電阻，對於該情況將在後面所述的〈能帶結構〉中詳細地說明。 The oxide semiconductor films 105, 106, and 108 are formed of a metal oxide containing at least In, and are typically made of In-Ga oxide, In-M-Zn oxide (M is Mg, Al, Ti, Ga, Y, Zr , La, Ce, Nd or Hf) are formed. By making the oxide semiconductor film 105 contain more indium than the oxide semiconductor film 106, a buried channel can be formed in the transistor 100g. Therefore, the variation of the critical voltage of the transistor 100g can be reduced, and the channel resistance can be reduced. This case will be described in detail in the "band structure" described later.

氧化物半導體膜105的In的原子個數比大於M(M為Mg、Al、Ti、Ga、Y、Zr、La、Ce、Nd或Hf)的原子個數比。當氧化物半導體膜105包含In-M-Zn氧化物(M為Mg、Al、Ti、Ga、Y、Zr、La、Ce、Nd或Hf)時，在用來形成氧化物半導體膜105的靶材中的金屬元素的原子個數比為In：M：Zn=x1：y1：z1的情況下，x1/y1較佳為大於1且6以下。作為靶材的金屬元素的原子個數比的代表例子，有In：M：Zn=2：1：1.5、In：M：Zn=2：1：2.3、In：M：Zn=2：1：3、In：M：Zn=3：1：2、In：M：Zn=3：1：3、In：M：Zn=3：1：4等。 In the oxide semiconductor film 105, the atomic number ratio of In is greater than that of M (M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf). When the oxide semiconductor film 105 contains In-M-Zn oxide (M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf), the target used to form the oxide semiconductor film 105 When the atomic number ratio of metal elements in the material is In:M:Zn=x 1 :y 1 :z 1 , x 1 /y 1 is preferably greater than 1 and 6 or less. Representative examples of the atomic number ratio of the metal elements of the target include In:M:Zn=2:1:1.5, In:M:Zn=2:1:2.3, In:M:Zn=2:1: 3. In: M: Zn=3: 1:2, In: M: Zn=3: 1:3, In: M: Zn=3: 1: 4 etc.

氧化物半導體膜106、108的In的原子個數比等於或小於M(M為Mg、Al、Ti、Ga、Y、Zr、La、Ce、Nd或Hf)的原子個數比。當氧化物半導體膜106、108包含In-M-Zn氧化物(M為Mg、Al、Ti、Ga、Y、Zr、La、Ce、Nd或Hf)時，在用來形成氧化物半導體膜106、108的靶材的金屬元素的原子個數比為In：M： Zn=x2：y2：z2的情況下，x2/y2較佳為1/6以上且1以下。另外，z2/y2較佳為1/3以上且6以下，更佳為1以上且6以下。藉由使z2/y2為1以上且6以下，作為氧化物半導體膜106、108的CAAC-OS(C-Axis Aligned Crystalline Oxide Semiconductor：c軸配向結晶氧化物半導體)膜的形成變得容易。作為靶材的金屬元素的原子個數比的代表例子，有In：M：Zn=1：1：1、In：M：Zn=1：1：1.2、In：M：Zn=1：3：2、In：M：Zn=1：3：4、In：M：Zn=1：3：6、In：M：Zn=1：3：8、In：M：Zn=1：4：4、In：M：Zn=1：4：5、In：M：Zn=1：4：6、In：M：Zn=1：4：7、In：M：Zn=1：4：8、In：M：Zn=1：5：5、In：M：Zn=1：5：6、In：M：Zn=1：5：7、In：M：Zn=1：5：8、In：M：Zn=1：6：8等。 The atomic number ratio of In of the oxide semiconductor films 106 and 108 is equal to or smaller than the atomic number ratio of M (M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf). When the oxide semiconductor films 106 and 108 contain In-M-Zn oxide (M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd or Hf), they are used to form the oxide semiconductor film 106 In the case where the atomic number ratio of the metal element of the target of 108 is In:M: Zn=x 2 :y 2 :z 2 , x 2 /y 2 is preferably 1/6 or more and 1 or less. In addition, z 2 /y 2 is preferably 1/3 or more and 6 or less, and more preferably 1 or more and 6 or less. By setting z 2 /y 2 to 1 or more and 6 or less, the formation of the CAAC-OS (C-Axis Aligned Crystalline Oxide Semiconductor: c-axis aligned crystal oxide semiconductor) film as the oxide semiconductor films 106 and 108 becomes easy . Representative examples of the atomic number ratio of the metal elements of the target include In:M:Zn=1:1:1, In:M:Zn=1:1:1:1.2, In:M:Zn=1:3: 2. In: M: Zn=1: 3: 4, In: M: Zn=1: 3: 6, In: M: Zn=1: 3: 8, In: M: Zn=1: 4: 4, In: M: Zn=1: 4: 5, In: M: Zn=1: 4: 6, In: M: Zn=1: 4: 7, In: M: Zn=1: 4: 8, In: M:Zn=1:5:5, In:M:Zn=1:5:6, In:M:Zn=1:5:7, In:M:Zn=1:5:8, In:M: Zn=1:6:8 and so on.

作為電晶體100g，由於通道形成在在In的原子個數比大於M(M為Mg、Al、Ti、Ga、Y、Zr、La、Ce、Nd或Hf)的原子個數比的氧化物半導體膜105中，因此場效移動率高。典型的是場效移動率為大於10cm2/Vs且小於60cm2/Vs，較佳為15cm2/Vs以上且小於50cm2/Vs的電晶體。然而，當被照射光時，關態電流增大。因此，藉由在驅動電路部設置遮光膜，實現場效移動率高且關態電流低的電晶體。其結果是，可以製造能夠進行高速工作的驅動電路部。 As a transistor 100g, since the channel is formed in an oxide semiconductor with an atomic ratio in In greater than M (M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd or Hf) In the film 105, the field effect mobility is high. Typically, the field-effect mobility is greater than 10 cm 2 /Vs and less than 60 cm 2 /Vs, preferably 15 cm 2 /Vs or more and less than 50 cm 2 /Vs transistors. However, when light is irradiated, the off-state current increases. Therefore, by providing a light-shielding film in the driving circuit portion, a transistor with a high field effect mobility and a low off-state current is realized. As a result, a drive circuit section capable of high-speed operation can be manufactured.

另一方面，作為電晶體100h，由於通道形成在在In的原子個數比等於或小於M(M為Mg、Al、Ti、 Ga、Y、Zr、La、Ce、Nd或Hf)的原子個數比的氧化物半導體膜中，因此即使對氧化物半導體膜照射光，關態電流的增大量也少。因此，藉由在像素部中設置包括In的原子個數比等於或小於M(M為Mg、Al、Ti、Ga、Y、Zr、La、Ce、Nd或Hf)的原子個數比的氧化物半導體膜的電晶體，可以製造光照射的劣化少且顯示品質優異的像素部。 On the other hand, as the transistor 100h, since the channel is formed in the atomic number ratio of In equal to or less than M (M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd or Hf) In an oxide semiconductor film of a ratio of numbers, even if the oxide semiconductor film is irradiated with light, the amount of increase in the off-state current is small. Therefore, by setting the number of atoms including In in the pixel portion to be equal to or less than M (M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf), the oxidation The transistor of the object semiconductor film can produce a pixel portion that is less deteriorated by light irradiation and has excellent display quality.

另外，在顯示裝置中，包括在驅動電路部及像素部中的電晶體的通道長度也可以不同。 In addition, in the display device, the channel lengths of the transistors included in the driving circuit section and the pixel section may be different.

典型的是，可以將驅動電路部所包括的電晶體100g的通道長度設定為小於2.5μm，或1.45μm以上且2.2μm以下。另一方面，可以將像素部所包括的電晶體100h的通道長度設定為2.5μm以上，或2.5μm以上且20μm以下。 Typically, the channel length of the transistor 100g included in the drive circuit section may be set to be less than 2.5 μm, or 1.45 μm or more and 2.2 μm or less. On the other hand, the channel length of the transistor 100h included in the pixel portion may be set to 2.5 μm or more, or 2.5 μm or more and 20 μm or less.

藉由將驅動電路部所包括的電晶體100g的通道長度設定為小於2.5μm，較佳為1.45μm以上且2.2μm以下，與像素部所包括的電晶體100h相比，能夠提高場效移動率並增大通態電流。其結果是，可以製造能夠進行高速工作的驅動電路部。 By setting the channel length of the transistor 100g included in the driving circuit section to be less than 2.5 μm, preferably 1.45 μm or more and 2.2 μm or less, the field effect mobility can be improved compared to the transistor 100h included in the pixel section And increase the on-state current. As a result, a drive circuit section capable of high-speed operation can be manufactured.

在多層膜107中，在不與導電膜119重疊的區域中具有形成氧缺陷的元素。另外，在氧化物半導體膜108中，在不與導電膜120重疊的區域中具有形成氧缺陷的元素。下面，將藉由對氧化物半導體膜添加而在其中形成氧缺陷的元素稱為雜質元素來進行說明。作為雜質元素 的典型例子，有氫、硼、碳、氮、氟、鋁、矽、磷、氯以及稀有氣體元素等。作為稀有氣體元素的典型例子，有氦、氖、氬、氪以及氙。 In the multilayer film 107, there is an element that forms an oxygen defect in a region that does not overlap with the conductive film 119. In addition, the oxide semiconductor film 108 has an element that forms an oxygen defect in a region that does not overlap with the conductive film 120. Hereinafter, an element in which an oxygen defect is formed by adding to the oxide semiconductor film will be referred to as an impurity element. Typical examples of impurity elements include hydrogen, boron, carbon, nitrogen, fluorine, aluminum, silicon, phosphorus, chlorine, and rare gas elements. As typical examples of rare gas elements, there are helium, neon, argon, krypton, and xenon.

另外，絕緣膜126是包含氫的膜，典型的有氮化物絕緣膜。作為氮化物絕緣膜的例子，有氮化矽膜、氮化鋁膜等。藉由使絕緣膜126與多層膜107及氧化物半導體膜108接觸，絕緣膜126所包含的氫擴散到多層膜107及氧化物半導體膜108。其結果是，在多層膜107及氧化物半導體膜108中的與絕緣膜126接觸的區域中，含有多量的氫。 In addition, the insulating film 126 is a film containing hydrogen, and a typical nitride insulating film is used. As examples of the nitride insulating film, there are a silicon nitride film, an aluminum nitride film, and the like. By bringing the insulating film 126 into contact with the multilayer film 107 and the oxide semiconductor film 108, the hydrogen contained in the insulating film 126 diffuses into the multilayer film 107 and the oxide semiconductor film 108. As a result, a large amount of hydrogen is contained in the region of the multilayer film 107 and the oxide semiconductor film 108 that is in contact with the insulating film 126.

當雜質元素被添加到氧化物半導體時，氧化物半導體中的金屬元素與氧的鍵合被切斷，而形成氧缺陷。當對因添加雜質元素而形成有氧缺陷的氧化物半導體添加氫時，氫進入氧缺陷部，在導帶附近形成施體能階，而氧化物半導體的導電率變高。其結果是，可以形成氧化物導電體。因此，氧化物導電體具有透光性。在此，將導電體化的氧化物半導體稱為氧化物導電體。 When an impurity element is added to the oxide semiconductor, the bond between the metal element in the oxide semiconductor and oxygen is cut off, and oxygen defects are formed. When hydrogen is added to an oxide semiconductor formed with an oxygen defect due to the addition of an impurity element, hydrogen enters the oxygen defect and a donor level is formed near the conduction band, and the conductivity of the oxide semiconductor becomes high. As a result, an oxide conductor can be formed. Therefore, the oxide conductor has translucency. Here, the conductive oxide semiconductor is referred to as an oxide conductor.

氧化物導電體是簡併半導體，可以推測其導帶邊緣能階與費米能階一致或大致一致。因此，氧化物導電體膜與具有源極電極及汲極電極的功能的導電膜之間的接觸為歐姆接觸，可以降低氧化物導電體膜與具有源極電極及汲極電極的功能的導電膜之間的接觸電阻。 The oxide conductor is a degenerate semiconductor, and it can be speculated that its conduction band edge energy level is the same or roughly the same as the Fermi energy level. Therefore, the contact between the oxide conductor film and the conductive film having the functions of the source electrode and the drain electrode is an ohmic contact, which can reduce the oxide conductor film and the conductive film having the functions of the source electrode and the drain electrode Contact resistance between.

換言之，低電阻區域107b、107c、108b、108c具有源極區域及汲極區域的功能。 In other words, the low-resistance regions 107b, 107c, 108b, and 108c function as source regions and drain regions.

另外，當使用鎢、鈦、鋁、銅、鉬、鉻、鉭或這些元素的合金等容易與氧鍵合的導電材料形成導電膜134、135、136、137時，氧化物半導體膜所包含的氧與導電膜134、135、136、137所包含的導電材料鍵合，在多層膜107及氧化物半導體膜108中形成氧缺陷。另外，有時形成導電膜134、135、136、137的導電材料的構成元素的一部分混入到多層膜107及氧化物半導體膜108中。其結果是，與導電膜134、135、136、137接觸的低電阻區域107b、107c、108b、108c的導電性提高，並具有源極區域及汲極區域的功能。 In addition, when conductive films 134, 135, 136, and 137 are formed using conductive materials that are easily bonded to oxygen, such as tungsten, titanium, aluminum, copper, molybdenum, chromium, tantalum, or alloys of these elements, the oxide semiconductor film contains Oxygen is bonded to the conductive material included in the conductive films 134, 135, 136, and 137, and oxygen defects are formed in the multilayer film 107 and the oxide semiconductor film 108. In addition, part of the constituent elements of the conductive material forming the conductive films 134, 135, 136, and 137 may be mixed into the multilayer film 107 and the oxide semiconductor film 108. As a result, the low-resistance regions 107b, 107c, 108b, and 108c that are in contact with the conductive films 134, 135, 136, and 137 have improved conductivity and have the functions of the source region and the drain region.

當雜質元素為稀有氣體元素且使用濺射法形成多層膜107及氧化物半導體膜108時，低電阻區域107b、107c、108b、108c分別包含稀有氣體元素，並且與通道區域107a、108a相比，低電阻區域107b、107c、108b、108c的稀有氣體元素濃度較高。這是因為，由於當使用濺射法形成多層膜107及氧化物半導體膜108時，作為濺射氣體使用稀有氣體，因此多層膜107及氧化物半導體膜108包含稀有氣體，並且為了在低電阻區域107b、107c、108b、108c中形成氧缺陷，有意地添加稀有氣體。注意，在低電阻區域107b、107c、108b、108c中，也可以添加與通道區域107a、108a不同的稀有氣體元素。 When the impurity element is a rare gas element and the multilayer film 107 and the oxide semiconductor film 108 are formed using a sputtering method, the low-resistance regions 107b, 107c, 108b, and 108c contain rare gas elements, respectively, and are compared with the channel regions 107a and 108a. The low-resistance regions 107b, 107c, 108b, and 108c have higher concentrations of rare gas elements. This is because, when the multilayer film 107 and the oxide semiconductor film 108 are formed using a sputtering method, a rare gas is used as the sputtering gas. Therefore, the multilayer film 107 and the oxide semiconductor film 108 contain a rare gas, and in order to Oxygen defects are formed in 107b, 107c, 108b, and 108c, and rare gases are intentionally added. Note that in the low-resistance regions 107b, 107c, 108b, and 108c, a rare gas element different from the channel regions 107a and 108a may be added.

另外，低電阻區域107b、107c因為與絕緣膜126接觸，所以與通道區域107a相比氫濃度較高。另 外，低電阻區域108b、108c因為與絕緣膜126接觸，所以與通道區域108a相比氫濃度較高。 In addition, since the low resistance regions 107b and 107c are in contact with the insulating film 126, the hydrogen concentration is higher than that of the channel region 107a. In addition, since the low-resistance regions 108b and 108c are in contact with the insulating film 126, the hydrogen concentration is higher than that of the channel region 108a.

在低電阻區域107b、107c、108b、108c中，可以使藉由二次離子質譜分析法得到的氫濃度為8×1019atoms/cm3以上、1×1020atoms/cm3以上或5×1020atoms/cm3以上。可以使通道區域107a、108a的藉由二次離子質譜分析法得到的氫濃度為5×1019atoms/cm3以下、1×1019atoms/cm3以下、5×1018atoms/cm3以下、1×1018atoms/cm3以下、5×1017atoms/cm3以下或1×1016atoms/cm3以下。 In the low-resistance regions 107b, 107c, 108b, and 108c, the hydrogen concentration obtained by secondary ion mass spectrometry may be 8×10 19 atoms/cm 3 or more, 1×10 20 atoms/cm 3 or more, or 5× 10 20 atoms/cm 3 or more. The hydrogen concentration of the channel regions 107a and 108a obtained by secondary ion mass spectrometry can be 5×10 19 atoms/cm 3 or less, 1×10 19 atoms/cm 3 or less, 5×10 18 atoms/cm 3 or less , 1×10 18 atoms/cm 3 or less, 5×10 17 atoms/cm 3 or less, or 1×10 16 atoms/cm 3 or less.

與通道區域107a、108a相比，低電阻區域107b、107c、108b、108c的氫濃度高且因稀有氣體元素的添加而產生的氧缺陷量較多。因此，導電性變高，並且具有源極區域及汲極區域的功能。典型的是，低電阻區域107b、107c、108b、108c的電阻率可以為1×10-3Ωcm以上且低於1×104Ωcm，或者1×10-3Ωcm以上且低於1×10-1Ωcm。 Compared with the channel regions 107a and 108a, the low-resistance regions 107b, 107c, 108b, and 108c have a higher hydrogen concentration and a larger amount of oxygen defects due to the addition of rare gas elements. Therefore, the conductivity becomes high, and functions as the source region and the drain region. Typically, the low-resistance region 107b, 107c, resistivity 108b, 108c may be less than 1 × 10 -3 Ωcm and less than 1 × 10 4 Ωcm, or more than 1 × 10 -3 Ωcm and less than 1 × 10 - 1 Ωcm.

注意，在低電阻區域107b、107c、108b、108c中，當氫的量與氧缺陷的量相同或比氧缺陷的量少時，氫容易被氧缺陷俘獲，而不容易擴散到通道區域107a、108a。其結果是，可以製造常關閉(normally-off)特性的電晶體。 Note that in the low-resistance regions 107b, 107c, 108b, and 108c, when the amount of hydrogen is the same as or less than the amount of oxygen defects, hydrogen is easily captured by the oxygen defects, and it is not easy to diffuse into the channel region 107a, 108a. As a result, transistors with normally-off characteristics can be manufactured.

另外，在低電阻區域107b、107c、108b、108c中，當氧缺陷的量比氫的量多時，藉由控制氫的 量，可以控制低電阻區域107b、107c、108b、108c的載子密度。或者，在低電阻區域107b、107c、108b、108c中，當氫的量比氧缺陷的量多時，藉由控制氧缺陷的量，可以控制低電阻區域107b、107c、108b、108c的載子密度。藉由將低電阻區域107b、107c、108b、108c的載子密度設定為5×1018個/cm3以上、1×1019個/cm3以上或1×1020個/cm3以上，可以製造通道區域與具有源極電極及汲極電極的功能的導電膜134、135、136、137之間的電阻小且通態電流大的電晶體。 In addition, in the low resistance regions 107b, 107c, 108b, and 108c, when the amount of oxygen defects is greater than the amount of hydrogen, the carrier density of the low resistance regions 107b, 107c, 108b, and 108c can be controlled by controlling the amount of hydrogen . Alternatively, in the low resistance regions 107b, 107c, 108b, and 108c, when the amount of hydrogen is greater than the amount of oxygen defects, by controlling the amount of oxygen defects, the carriers in the low resistance regions 107b, 107c, 108b, and 108c can be controlled. density. By setting the carrier density of the low resistance regions 107b, 107c, 108b, and 108c to 5×10 18 pieces/cm 3 or more, 1×10 19 pieces/cm 3 or more, or 1×10 20 pieces/cm 3 or more, it is possible A transistor having a small resistance and a large on-state current between the channel region and the conductive films 134, 135, 136, and 137 having the functions of the source electrode and the drain electrode is manufactured.

在本實施方式所示的電晶體100g、100h中，由於在通道區域與具有源極電極及汲極電極的功能的導電膜134、135、136、137之間包括低電阻區域107b、107c、108b、108c，因此寄生電阻較小。 In the transistors 100g and 100h shown in this embodiment, the low resistance regions 107b, 107c, and 108b are included between the channel region and the conductive films 134, 135, 136, and 137 having the functions of the source electrode and the drain electrode. , 108c, so the parasitic resistance is small.

另外，在電晶體100g中，導電膜119不與導電膜134、135重疊。因此，能夠降低導電膜119與導電膜134、135之間的寄生電容。另外，在電晶體100h中，導電膜120不與導電膜136、137重疊。因此，能夠降低導電膜120與導電膜136、137之間的寄生電容。其結果是，當作為基板101使用大面積基板時，能夠降低導電膜119、120、134、135、136、137中的信號延遲。 In addition, in the transistor 100g, the conductive film 119 does not overlap with the conductive films 134 and 135. Therefore, the parasitic capacitance between the conductive film 119 and the conductive films 134 and 135 can be reduced. In addition, in the transistor 100h, the conductive film 120 does not overlap with the conductive films 136 and 137. Therefore, the parasitic capacitance between the conductive film 120 and the conductive films 136 and 137 can be reduced. As a result, when a large-area substrate is used as the substrate 101, the signal delay in the conductive films 119, 120, 134, 135, 136, and 137 can be reduced.

因此，電晶體100g、100h的通態電流較大，場效移動率較高。 Therefore, the on-state current of the transistors 100g and 100h is large, and the field effect mobility is high.

另外，在電晶體100g中，以導電膜119為遮罩，對多層膜107添加雜質元素。另外，在電晶體100h 中，以導電膜120為遮罩，對氧化物半導體膜108添加雜質元素。換言之，可以以自對準的方式形成低電阻區域。 In addition, in the transistor 100g, the conductive film 119 is used as a mask, and an impurity element is added to the multilayer film 107. In addition, in the transistor 100h, with the conductive film 120 as a mask, an impurity element is added to the oxide semiconductor film 108. In other words, the low resistance region can be formed in a self-aligned manner.

驅動電路部所包括的電晶體100g的通態電流較大且場效移動率較高。因此，可以製造驅動電路部的佔有面積小的顯示裝置。 The on-state current of the transistor 100g included in the driving circuit section is large and the field effect mobility is high. Therefore, a display device with a small occupied area of the drive circuit portion can be manufactured.

另外，藉由使用場效移動率較高的電晶體，可以在作為驅動電路部的一個例子的信號線驅動電路中形成解多工器電路。解多工器電路是將一個輸入信號分配到多個輸出中的任一個的電路，因此能夠減少用於輸入信號的輸入端子的數量。例如，一個像素包括紅色子像素、綠色子像素及藍色子像素，並且藉由對各像素設置解多工器電路，可以利用解多工器電路分配對各子像素輸入的輸入信號，因此能夠將輸入端子的數量減少到1/3。 In addition, by using a transistor with a high field-effect mobility, a demultiplexer circuit can be formed in the signal line drive circuit as an example of the drive circuit section. The demultiplexer circuit is a circuit that distributes one input signal to any one of a plurality of outputs, and therefore can reduce the number of input terminals for input signals. For example, a pixel includes a red subpixel, a green subpixel, and a blue subpixel, and by providing a demultiplexer circuit for each pixel, the demultiplexer circuit can be used to distribute the input signal input to each subpixel, so Reduce the number of input terminals to 1/3.

另外，藉由在像素部中設置通態電流較大的電晶體100h，即使在大型顯示裝置或高清晰顯示裝置中佈線的數量增多，也能夠降低各佈線的信號延遲，而能夠抑制顯示的不均勻。 In addition, by providing the transistor 100h with a large on-state current in the pixel portion, even if the number of wirings increases in a large display device or a high-definition display device, the signal delay of each wiring can be reduced, and the display can be suppressed. Evenly.

如上所述，藉由使用能夠進行高速工作的電晶體製造驅動電路部，並使用寄生電容及寄生電阻較少的電晶體製造像素部，可以製造高清晰且能夠進行倍速驅動的顯示裝置。 As described above, by manufacturing the drive circuit portion using transistors capable of high-speed operation and manufacturing the pixel portion using transistors having less parasitic capacitance and parasitic resistance, a high-definition display device capable of double-speed driving can be manufactured.

下面詳細說明圖1A和圖1B所示的結構。 The structure shown in FIGS. 1A and 1B will be described in detail below.

作為基板101可以使用各種各樣的基板，而不侷限於特定的基板。作為基板的一個例子，有半導體基 板(例如單晶基板或矽基板)、SOI基板、玻璃基板、石英基板、塑膠基板、金屬基板、不鏽鋼基板、包含不鏽鋼箔的基板、鎢基板、包含鎢箔的基板、撓性基板、貼合薄膜、包含纖維狀材料的紙或者基材薄膜等。作為玻璃基板的一個例子，可以舉出鋇硼矽酸鹽玻璃、鋁硼矽酸鹽玻璃或鈉鈣玻璃等。作為撓性基板、貼合薄膜、基材薄膜等，可以舉出如下例子。例如可以舉出以聚對苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚醚碸(PES)為代表的塑膠。或者，作為一個例子，可以舉出丙烯酸樹脂等合成樹脂等。或者，作為一個例子，可以舉出聚丙烯、聚氟化乙烯或聚氯乙烯等。或者，作為一個例子，可以舉出聚酯、聚醯胺、聚醯亞胺、芳族聚醯胺、環氧樹脂、無機蒸鍍薄膜、紙等。尤其是，藉由使用半導體基板、單晶基板或SOI基板等製造電晶體，可以製造特性、尺寸或形狀等的不均勻性小、電流能力高且尺寸小的電晶體。當利用上述電晶體構成電路時，可以實現電路的低功耗化或電路的高集成化。 As the substrate 101, various substrates can be used without being limited to specific substrates. As an example of the substrate, there are a semiconductor substrate (for example, a single crystal substrate or a silicon substrate), an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate containing stainless steel foil, a tungsten substrate, and a tungsten foil Substrates, flexible substrates, laminating films, papers containing fibrous materials, base film, etc. As an example of the glass substrate, barium borosilicate glass, aluminoborosilicate glass, soda lime glass, or the like can be mentioned. Examples of the flexible substrate, bonding film, base film, and the like include the following. For example, plastics represented by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyether sock (PES) can be cited. Or, as an example, a synthetic resin such as acrylic resin, etc. may be mentioned. Or, as an example, polypropylene, polyvinyl fluoride, polyvinyl chloride, or the like may be mentioned. Or, as an example, polyester, polyamide, polyimide, aromatic polyamide, epoxy resin, inorganic vapor-deposited film, paper, etc. may be mentioned. In particular, by manufacturing a transistor using a semiconductor substrate, a single crystal substrate, an SOI substrate, or the like, it is possible to manufacture a transistor having small unevenness in characteristics, size, shape, etc., high current capability, and small size. When the above transistors are used to form a circuit, it is possible to achieve low power consumption of the circuit or high integration of the circuit.

另外，作為基板101，也可以使用撓性基板，並且在撓性基板上直接形成電晶體。或者，也可以在基板101與電晶體之間設置剝離層。剝離層可以在如下情況下使用，即在剝離層上製造半導體裝置的一部分或全部，然後使其從基板101分離並轉置到其他基板上的情況。此時，也可以將電晶體轉置到耐熱性低的基板或撓性基板上。另外，作為上述剝離層，例如可以使用鎢膜與氧化矽 膜的無機膜的層疊結構或在基板上形成有聚醯亞胺等有機樹脂膜的結構等。 In addition, as the substrate 101, a flexible substrate may be used, and a transistor is directly formed on the flexible substrate. Alternatively, a peeling layer may be provided between the substrate 101 and the transistor. The peeling layer can be used in a case where part or all of the semiconductor device is manufactured on the peeling layer, and then separated from the substrate 101 and transferred to another substrate. At this time, the transistor may be transposed on a substrate with low heat resistance or a flexible substrate. In addition, as the peeling layer, for example, a laminated structure of an inorganic film of a tungsten film and a silicon oxide film, or a structure in which an organic resin film such as polyimide is formed on a substrate, or the like can be used.

作為電晶體所轉置到的基板的一個例子，除了上述可以形成電晶體的基板之外，還可以使用紙基板、玻璃紙基板、芳族聚醯胺薄膜基板、聚醯亞胺薄膜基板、石材基板、木材基板、布基板(包括天然纖維(絲、棉、麻)、合成纖維(尼龍、聚氨酯、聚酯)或再生纖維(醋酯纖維、銅氨纖維、人造纖維、再生聚酯)等)、皮革基板、橡膠基板等。藉由使用上述基板，能夠形成特性良好的電晶體或功耗低的電晶體，能夠提供耐久性高或耐熱性高的裝置，或能夠實現輕量化或薄型化。 As an example of the substrate to which the transistor is transposed, in addition to the above-mentioned substrate capable of forming a transistor, a paper substrate, a cellophane substrate, an aromatic polyimide film substrate, a polyimide film substrate, and a stone substrate can also be used , Wood substrate, cloth substrate (including natural fiber (silk, cotton, hemp), synthetic fiber (nylon, polyurethane, polyester) or recycled fiber (acetate fiber, copper ammonia fiber, rayon fiber, recycled polyester), etc.), Leather substrate, rubber substrate, etc. By using the above substrate, a transistor with good characteristics or a transistor with low power consumption can be formed, a device with high durability or high heat resistance can be provided, or the weight or thickness can be reduced.

絕緣膜104可以是氧化物絕緣膜或氮化物絕緣膜的單層或疊層。注意，為了提高絕緣膜104與多層膜107及氧化物半導體膜108的介面特性，絕緣膜104中的至少與多層膜107及氧化物半導體膜108接觸的區域較佳為使用氧化物絕緣膜形成。另外，藉由作為絕緣膜104使用因加熱而釋放氧的氧化物絕緣膜，可以利用加熱處理使絕緣膜104所包含的氧移動到多層膜107及氧化物半導體膜108中。另外，作為絕緣膜104，藉由使用氮化物絕緣膜形成與基板101接觸的區域，可以防止基板101所包含的元素移動到多層膜107及氧化物半導體膜108中，所以是較佳的。 The insulating film 104 may be a single layer or a stacked layer of an oxide insulating film or a nitride insulating film. Note that in order to improve the interface characteristics of the insulating film 104 and the multilayer film 107 and the oxide semiconductor film 108, it is preferable that at least the region of the insulating film 104 that is in contact with the multilayer film 107 and the oxide semiconductor film 108 is formed using an oxide insulating film. In addition, by using an oxide insulating film that releases oxygen by heating as the insulating film 104, the oxygen contained in the insulating film 104 can be moved to the multilayer film 107 and the oxide semiconductor film 108 by heat treatment. In addition, as the insulating film 104, by using a nitride insulating film to form a region in contact with the substrate 101, it is possible to prevent elements contained in the substrate 101 from moving to the multilayer film 107 and the oxide semiconductor film 108, which is preferable.

絕緣膜104的厚度可以是50nm以上，或者100nm以上且3000nm以下，或者200nm以上且1000nm 以下。藉由使絕緣膜104較厚，不僅可以增加絕緣膜104的氧的釋放量，還可以降低絕緣膜104與多層膜107及氧化物半導體膜108的介面的介面態密度並降低多層膜107中的通道區域107a以及氧化物半導體膜108中的通道區域108a所包含的氧缺陷。 The thickness of the insulating film 104 may be 50 nm or more, or 100 nm or more and 3000 nm or less, or 200 nm or more and 1000 nm or less. By making the insulating film 104 thicker, not only can the amount of oxygen released from the insulating film 104 be increased, but also the interface state density of the interface between the insulating film 104 and the multilayer film 107 and the oxide semiconductor film 108 can be reduced and the Oxygen defects contained in the channel region 107a and the channel region 108a in the oxide semiconductor film 108.

作為絕緣膜104，例如可以使用氧化矽、氧氮化矽、氮氧化矽、氮化矽、氧化鋁、氧化鉿、氧化鎵或Ga-Zn氧化物等，並以單層或疊層設置。 As the insulating film 104, for example, silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, aluminum oxide, hafnium oxide, gallium oxide, Ga-Zn oxide, or the like can be used and provided in a single layer or a stacked layer.

在此，作為絕緣膜104，層疊絕緣膜104a及絕緣膜104b來形成。藉由作為絕緣膜104a使用氮化物絕緣膜，可以防止基板101所包含的元素的擴散。另外，藉由作為絕緣膜104b使用氧化物絕緣膜，可以降低絕緣膜104b與多層膜107及氧化物半導體膜108的介面的介面態密度等。 Here, as the insulating film 104, an insulating film 104a and an insulating film 104b are stacked and formed. By using a nitride insulating film as the insulating film 104a, the diffusion of elements included in the substrate 101 can be prevented. In addition, by using an oxide insulating film as the insulating film 104b, the interface state density of the interface between the insulating film 104b and the multilayer film 107 and the oxide semiconductor film 108 can be reduced.

在多層膜107及氧化物半導體膜108中，當包含第14族元素之一的矽或碳時，在多層膜107及氧化物半導體膜108中氧缺陷增加而n型化。因此，在多層膜107及氧化物半導體膜108中，尤其在通道區域107a、108a中，可以將矽或碳的濃度(藉由二次離子質譜分析法得到的濃度)設定為2×1018atoms/cm3以下或2×1017atoms/cm3以下。其結果是，電晶體具有正臨界電壓的電特性(也稱為常關閉特性)。 When the multilayer film 107 and the oxide semiconductor film 108 contain silicon or carbon which is one of the group 14 elements, oxygen defects increase in the multilayer film 107 and the oxide semiconductor film 108 and become n-type. Therefore, in the multilayer film 107 and the oxide semiconductor film 108, especially in the channel regions 107a and 108a, the concentration of silicon or carbon (the concentration obtained by secondary ion mass spectrometry) can be set to 2×10 18 atoms /cm 3 or less or 2×10 17 atoms/cm 3 or less. As a result, the transistor has the electrical characteristics of a positive threshold voltage (also called normally-off characteristics).

另外，在多層膜107及氧化物半導體膜108中，尤其在通道區域107a、108a中，可以將藉由二次離 子質譜分析法得到的鹼金屬或鹼土金屬的濃度設定為1×1018atoms/cm3以下或2×1016atoms/cm3以下。鹼金屬及鹼土金屬在與氧化物半導體鍵合時有時生成載子，而使電晶體的關態電流增大。因此，較佳為降低通道區域107a、108a的鹼金屬或鹼土金屬的濃度。其結果是，電晶體具有正臨界電壓的電特性(也稱為常關閉特性)。 In addition, in the multilayer film 107 and the oxide semiconductor film 108, especially in the channel regions 107a and 108a, the concentration of the alkali metal or alkaline earth metal obtained by secondary ion mass spectrometry can be set to 1×10 18 atoms/ cm 3 or less or 2×10 16 atoms/cm 3 or less. Alkali metals and alkaline earth metals sometimes generate carriers when bonded to an oxide semiconductor, which increases the off-state current of the transistor. Therefore, it is preferable to reduce the concentration of the alkali metal or alkaline earth metal in the channel regions 107a and 108a. As a result, the transistor has the electrical characteristics of a positive threshold voltage (also called normally-off characteristics).

在多層膜107及氧化物半導體膜108中，尤其在通道區域107a、108a中，當包含氮時，生成作為載子的電子，載子密度增加，而n型化。其結果是，使用包含氮的氧化物半導體膜的電晶體容易具有常開啟(normally-on)特性。因此，在該氧化物半導體膜中，尤其在通道區域107a、108a中，較佳為儘可能地降低氮。例如，可以將藉由二次離子質譜分析法得到的氮濃度設定為5×1018atoms/cm3以下。 In the multilayer film 107 and the oxide semiconductor film 108, especially in the channel regions 107a and 108a, when nitrogen is contained, electrons as carriers are generated, the carrier density increases, and the n-type becomes. As a result, transistors using an oxide semiconductor film containing nitrogen tend to have normally-on characteristics. Therefore, in this oxide semiconductor film, particularly in the channel regions 107a and 108a, it is preferable to reduce nitrogen as much as possible. For example, the nitrogen concentration obtained by secondary ion mass spectrometry can be set to 5×10 18 atoms/cm 3 or less.

在多層膜107及氧化物半導體膜108中，尤其在通道區域107a、108a中，藉由降低雜質元素，可以降低氧化物半導體膜的載子密度。因此，在多層膜107及氧化物半導體膜108中，尤其在通道區域107a、108a中，可以將載子密度設定為1×1017個/cm3以下，或1×1015個/cm3以下，或1×1013個/cm3以下，或8×1011/cm3個以下，或1×1011個/cm3以下，較佳為低於1×1010/cm3個且為1×10-9/cm3個以上。 In the multilayer film 107 and the oxide semiconductor film 108, especially in the channel regions 107a and 108a, the carrier density of the oxide semiconductor film can be reduced by reducing the impurity element. Therefore, in the multilayer film 107 and the oxide semiconductor film 108, especially in the channel regions 107a and 108a, the carrier density can be set to 1×10 17 pieces/cm 3 or less, or 1×10 15 pieces/cm 3 or less , Or 1×10 13 pieces/cm 3 or less, or 8×10 11 /cm 3 pieces or less, or 1×10 11 pieces/cm 3 or less, preferably less than 1×10 10 /cm 3 pieces and 1 ×10 -9 /cm 3 or more.

作為多層膜107及氧化物半導體膜108，藉由使用雜質濃度低且缺陷態密度低的氧化物半導體膜，可以 製造具有更優異的電特性的電晶體。在此，將雜質濃度低且缺陷態密度低(氧缺陷少)的狀態稱為高純度本質或實質上高純度本質。高純度本質或實質上高純度本質的氧化物半導體具有較少的載子發生源，因此有時可以降低其載子密度。由此，通道區域形成在該氧化物半導體膜中的電晶體容易具有正臨界電壓的電特性(也稱為常關閉特性)。此外，高純度本質或實質上高純度本質的氧化物半導體膜具有較低的缺陷態密度，所以有時其陷阱態密度也變低。此外，高純度本質或實質上高純度本質的氧化物半導體膜的關態電流顯著小，在源極電極與汲極電極間的電壓(汲極電壓)在1V至10V的範圍內時，關態電流可以為半導體參數分析儀的測量極限以下，即1×10-13A以下。因此，有時通道區域形成在該氧化物半導體膜中的電晶體的電特性變動小，而該電晶體具有高可靠性。 As the multilayer film 107 and the oxide semiconductor film 108, by using an oxide semiconductor film having a low impurity concentration and a low density of defect states, a transistor having more excellent electrical characteristics can be manufactured. Here, a state where the impurity concentration is low and the density of defect states is low (less oxygen defects) is referred to as a high purity essence or a substantially high purity essence. An oxide semiconductor having a high-purity essence or a substantially high-purity essence has fewer sources of carrier generation, and therefore may sometimes reduce its carrier density. Thus, the transistor in which the channel region is formed in the oxide semiconductor film is likely to have electrical characteristics of positive threshold voltage (also referred to as normally-off characteristics). In addition, the oxide semiconductor film of high purity essence or substantially high purity essence has a lower density of defect states, so the density of trap states sometimes becomes lower. In addition, the off-state current of the oxide semiconductor film of high purity or substantially high purity essence is significantly small, and the off state when the voltage between the source electrode and the drain electrode (drain voltage) is in the range of 1V to 10V The current may be below the measurement limit of the semiconductor parameter analyzer, that is, below 1×10 -13 A. Therefore, in some cases, the transistor in which the channel region is formed in the oxide semiconductor film has little variation in electrical characteristics, and the transistor has high reliability.

另外，構成多層膜107的氧化物半導體膜105、106及氧化物半導體膜108例如也可以是非單晶結構。非單晶結構例如包括下述CAAC-OS、多晶結構、下述微晶結構或非晶結構。在非單晶結構中，非晶結構的缺陷態密度最高，而CAAC-OS的缺陷態密度最低。 In addition, the oxide semiconductor films 105 and 106 and the oxide semiconductor film 108 constituting the multilayer film 107 may have a non-single-crystal structure, for example. The non-single-crystal structure includes, for example, the following CAAC-OS, polycrystalline structure, the following microcrystalline structure, or amorphous structure. Among the non-single-crystal structures, the amorphous structure has the highest defect state density, while CAAC-OS has the lowest defect state density.

構成多層膜107的氧化物半導體膜105、106及氧化物半導體膜108也可以為具有非晶結構的區域、微晶結構的區域、多晶結構的區域、CAAC-OS的區域和單晶結構的區域中的兩種以上的混合膜。混合膜有時採用例如具有非晶結構的區域、微晶結構的區域、多晶結構的區 域、CAAC-OS的區域和單晶結構的區域中的兩種以上的區域的單層結構。另外，混合膜有時採用例如層疊有非晶結構的區域、微晶結構的區域、多晶結構的區域、CAAC-OS的區域和單晶結構的區域中的兩種以上的區域的結構。 The oxide semiconductor films 105 and 106 and the oxide semiconductor film 108 constituting the multilayer film 107 may be regions with an amorphous structure, regions with a microcrystalline structure, regions with a polycrystalline structure, regions with a CAAC-OS, and single crystal structures. More than two mixed membranes in the area. The mixed film sometimes adopts, for example, a single-layer structure of two or more types of a region having an amorphous structure, a region having a microcrystalline structure, a region having a polycrystalline structure, a region having a CAAC-OS, and a region having a single crystal structure. In addition, the mixed film may have a structure in which two or more types of regions, for example, a region in which an amorphous structure, a region in a microcrystalline structure, a region in a polycrystalline structure, a region in a CAAC-OS, and a region in a single crystal structure are stacked.

注意，在多層膜107中，有時通道區域107a與低電阻區域107b、107c的結晶性不同。另外，在氧化物半導體膜108中，有時通道區域108a與低電阻區域108b、108c的結晶性不同。這是因為，當低電阻區域107b、107c、108b、108c被添加雜質元素時，低電阻區域107b、107c、108b、108c中產生損傷，而結晶性下降。 Note that in the multilayer film 107, the channel region 107a and the low resistance regions 107b and 107c may have different crystallinity. In addition, in the oxide semiconductor film 108, the channel region 108a and the low resistance regions 108b and 108c may have different crystallinities. This is because, when an impurity element is added to the low-resistance regions 107b, 107c, 108b, and 108c, damage occurs in the low-resistance regions 107b, 107c, 108b, and 108c, and the crystallinity decreases.

絕緣膜116、117可以是氧化物絕緣膜或氮化物絕緣膜的單層或疊層。注意，為了提高絕緣膜116、117與多層膜107及氧化物半導體膜108的介面特性，絕緣膜116、117中的至少與多層膜107及氧化物半導體膜108接觸的區域較佳為使用氧化物絕緣膜形成。作為絕緣膜116、117，例如可以使用氧化矽、氧氮化矽、氮氧化矽、氮化矽、氧化鋁、氧化鉿、氧化鎵或Ga-Zn氧化物等，並以單層或疊層設置。 The insulating films 116 and 117 may be a single layer or a stacked layer of an oxide insulating film or a nitride insulating film. Note that in order to improve the interfacial characteristics of the insulating films 116 and 117 and the multilayer film 107 and the oxide semiconductor film 108, it is preferable to use oxide in the regions of the insulating films 116 and 117 that are in contact with at least the multilayer film 107 and the oxide semiconductor film 108 The insulating film is formed. As the insulating films 116 and 117, for example, silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, aluminum oxide, hafnium oxide, gallium oxide, or Ga-Zn oxide can be used, and they can be provided in a single layer or stacked layers .

另外，藉由作為絕緣膜116、117設置具有對氧、氫、水等的阻擋效果的絕緣膜，可以防止氧從多層膜107及氧化物半導體膜108擴散到外部以及氫、水等從外部侵入到多層膜107及氧化物半導體膜108。作為具有對氧、氫、水等的阻擋效果的絕緣膜，有氧化鋁、氧氮化 鋁、氧化鎵、氧氮化鎵、氧化釔、氧氮化釔、氧化鉿、氧氮化鉿等。 In addition, by providing the insulating films 116 and 117 with an insulating film having a blocking effect against oxygen, hydrogen, water, etc., the diffusion of oxygen from the multilayer film 107 and the oxide semiconductor film 108 to the outside and the intrusion of hydrogen, water, etc. from the outside can be prevented To the multilayer film 107 and the oxide semiconductor film 108. As the insulating film having a blocking effect against oxygen, hydrogen, water, etc., there are aluminum oxide, aluminum oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, hafnium oxide, hafnium oxynitride, and the like.

另外，作為絕緣膜116、117，藉由使用矽酸鉿(HfSiOx)、添加有氮的矽酸鉿(HfSixOyNz)、添加有氮的鋁酸鉿(HfAlxOyNz)、氧化鉿、氧化釔等high-k材料，可以降低電晶體的閘極漏電流。 In addition, as the insulating films 116 and 117, by using hafnium silicate (HfSiO x ), nitrogen-added hafnium silicate (HfSi x O y N z ), and nitrogen-added hafnium aluminate (HfAl x O y N z ), high-k materials such as hafnium oxide, yttrium oxide, etc., can reduce the gate leakage current of the transistor.

另外，作為絕緣膜116、117，藉由使用因加熱而釋放氧的氧化物絕緣膜，能夠藉由加熱處理使絕緣膜116、117所包含的氧移動到多層膜107及氧化物半導體膜108中。 In addition, as the insulating films 116 and 117, by using an oxide insulating film that releases oxygen by heating, the oxygen contained in the insulating films 116 and 117 can be moved to the multilayer film 107 and the oxide semiconductor film 108 by heat treatment .

絕緣膜116、117的厚度可以為5nm以上且400nm以下、5nm以上且300nm以下或10nm以上且250nm以下。 The thickness of the insulating films 116 and 117 may be 5 nm or more and 400 nm or less, 5 nm or more and 300 nm or less, or 10 nm or more and 250 nm or less.

導電膜119、120可以使用選自鋁、鉻、銅、鉭、鈦、鉬、鎳、鐵、鈷、鎢中的金屬元素、以上述金屬元素為成分的合金或組合上述金屬元素的合金等形成。另外，還可以使用選自錳和鋯中的一種或多種的金屬元素。另外，導電膜119、120既可以是單層結構又可以是兩層以上的疊層結構。例如，有包含矽的鋁膜的單層結構、包含錳的銅膜的單層結構、在鋁膜上層疊鈦膜的兩層結構、在氮化鈦膜上層疊鈦膜的兩層結構、在氮化鈦膜上層疊鎢膜的兩層結構、在氮化鉭膜或氮化鎢膜上層疊鎢膜的兩層結構、在包含錳的銅膜上層疊銅膜的兩層結構、依次層疊鈦膜、鋁膜及鈦膜的三層結構、依次層疊包含錳的銅膜、 銅膜及包含錳的銅膜的三層結構等。另外，也可以使用：組合鋁與選自鈦、鉭、鎢、鉬、鉻、釹、鈧中的一種或多種元素而成的合金膜或氮化膜。 The conductive films 119 and 120 can be formed using a metal element selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, nickel, iron, cobalt, and tungsten, an alloy containing the above metal element as a component, or an alloy combining the above metal element, etc. . In addition, one or more metal elements selected from manganese and zirconium can also be used. In addition, the conductive films 119 and 120 may have a single-layer structure or a laminated structure of two or more layers. For example, there are a single-layer structure of an aluminum film containing silicon, a single-layer structure of a copper film containing manganese, a two-layer structure of stacking a titanium film on an aluminum film, a two-layer structure of stacking a titanium film on a titanium nitride film, A two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, a two-layer structure in which a copper film is laminated on a copper film containing manganese, and titanium is laminated in order A three-layer structure of a film, an aluminum film, and a titanium film, a three-layer structure in which a copper film containing manganese, a copper film, and a copper film containing manganese are stacked in this order. Alternatively, an alloy film or a nitride film formed by combining aluminum and one or more elements selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium may be used.

另外，導電膜119、120也可以使用銦錫氧化物、包含氧化鎢的銦氧化物、包含氧化鎢的銦鋅氧化物、包含氧化鈦的銦氧化物、包含氧化鈦的銦錫氧化物、銦鋅氧化物、包含氧化矽的銦錫氧化物等透光導電材料。另外，也可以採用上述具有透光性的導電性材料和上述金屬元素的疊層結構。 In addition, for the conductive films 119 and 120, indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, or indium may be used. Light-transmitting conductive materials such as zinc oxide and indium tin oxide containing silicon oxide. In addition, a laminated structure of the above-mentioned translucent conductive material and the above-mentioned metal element may also be used.

導電膜119、120的厚度可以為30nm以上且500nm以下或100nm以上且400nm以下。 The thickness of the conductive films 119 and 120 may be 30 nm or more and 500 nm or less or 100 nm or more and 400 nm or less.

導電膜134、135、136、137具有源極電極及汲極電極的功能。導電膜134、135、136、137可以適當地使用導電膜119、120所示的材料及結構。 The conductive films 134, 135, 136, and 137 have the functions of source electrode and drain electrode. As the conductive films 134, 135, 136, and 137, the materials and structures shown in the conductive films 119 and 120 can be appropriately used.

絕緣膜127可以是氧化物絕緣膜或氮化物絕緣膜的單層或疊層。另外，作為絕緣膜127，藉由使用因加熱而釋放氧的氧化物絕緣膜，能夠藉由加熱處理使絕緣膜127所包含的氧移動到多層膜107及氧化物半導體膜108中。 The insulating film 127 may be a single layer or a stacked layer of an oxide insulating film or a nitride insulating film. In addition, as the insulating film 127, by using an oxide insulating film that releases oxygen by heating, the oxygen contained in the insulating film 127 can be moved to the multilayer film 107 and the oxide semiconductor film 108 by heat treatment.

作為絕緣膜127，例如可以使用氧化矽、氧氮化矽、氮氧化矽、氮化矽、氧化鋁、氧化鉿、氧化鎵或Ga-Zn氧化物等，並以單層或疊層設置。 As the insulating film 127, for example, silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, aluminum oxide, hafnium oxide, gallium oxide, Ga-Zn oxide, or the like can be used and provided in a single layer or a stacked layer.

絕緣膜127的厚度可以為30nm以上且500nm以下或100nm以上且400nm以下。 The thickness of the insulating film 127 may be 30 nm or more and 500 nm or less or 100 nm or more and 400 nm or less.

〈半導體裝置的結構2〉 <Structure 2 of Semiconductor Device>

接著，使用圖3A和圖3B說明半導體裝置的其他結構。在此，在形成在驅動電路部的電晶體100i及形成在像素部的電晶體100j中，具有閘極電極的功能的導電膜119、120為疊層結構。注意，圖3A示出通道長度方向的電晶體100i、100j的剖面圖，圖3B示出通道寬度方向的電晶體100i、100j的剖面圖。 Next, another structure of the semiconductor device will be described using FIGS. 3A and 3B. Here, in the transistor 100i formed in the driving circuit portion and the transistor 100j formed in the pixel portion, the conductive films 119 and 120 having the function of a gate electrode have a laminated structure. Note that FIG. 3A shows a cross-sectional view of the transistors 100i, 100j in the channel length direction, and FIG. 3B shows a cross-sectional view of the transistors 100i, 100j in the channel width direction.

導電膜119包括接觸於絕緣膜116的導電膜119a及接觸於導電膜119a的導電膜119b。另外，導電膜119a的端部位於導電膜119b的端部的外側。換言之，導電膜119a具有其端部比導電膜119b的端部突出的形狀。 The conductive film 119 includes a conductive film 119a contacting the insulating film 116 and a conductive film 119b contacting the conductive film 119a. In addition, the end of the conductive film 119a is located outside the end of the conductive film 119b. In other words, the conductive film 119a has a shape whose end portion protrudes from the end portion of the conductive film 119b.

另外，絕緣膜116的端部位於導電膜119a的端部的外側。換言之，絕緣膜116具有其端部比導電膜119a的端部突出的形狀。再者，絕緣膜116的側面也可以是彎曲的。 In addition, the end of the insulating film 116 is located outside the end of the conductive film 119a. In other words, the insulating film 116 has a shape whose end protrudes from the end of the conductive film 119a. Furthermore, the side surface of the insulating film 116 may be curved.

導電膜120包括接觸於絕緣膜117的導電膜120a及接觸於導電膜120a的導電膜120b。另外，導電膜120a的端部位於導電膜120b的端部的外側。換言之，導電膜120a具有其端部比導電膜120b的端部突出的形狀。 The conductive film 120 includes a conductive film 120a contacting the insulating film 117 and a conductive film 120b contacting the conductive film 120a. In addition, the end of the conductive film 120a is located outside the end of the conductive film 120b. In other words, the conductive film 120a has a shape whose end portion protrudes from the end portion of the conductive film 120b.

另外，絕緣膜117的端部位於導電膜120a的端部的外側。換言之，絕緣膜117具有其端部比導電膜120a的端部突出的形狀。再者，絕緣膜117的側面也可以是彎曲的。 In addition, the end of the insulating film 117 is located outside the end of the conductive film 120a. In other words, the insulating film 117 has a shape whose end protrudes from the end of the conductive film 120a. Furthermore, the side surface of the insulating film 117 may be curved.

作為導電膜119a、120a，可以使用鈦、鉭、鉬、鎢、這些元素的合金、氮化鈦、氮化鉭、氮化鉬或氮化鎢等形成。或者，導電膜119a、120a可以使用Cu-X合金(X為Mn、Ni、Cr、Fe、Co、Mo、Ta或Ti)等形成。 As the conductive films 119a and 120a, titanium, tantalum, molybdenum, tungsten, alloys of these elements, titanium nitride, tantalum nitride, molybdenum nitride, tungsten nitride, or the like can be used. Alternatively, the conductive films 119a and 120a may be formed using a Cu-X alloy (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti) or the like.

導電膜119b、120b使用低電阻材料形成。作為導電膜119b、120b，可以使用銅、鋁、金、銀、鎢等、這些元素的合金或者以上述材料為主成分的化合物等形成。 The conductive films 119b and 120b are formed using a low-resistance material. As the conductive films 119b and 120b, copper, aluminum, gold, silver, tungsten, etc., alloys of these elements, or compounds mainly composed of the above-mentioned materials can be used.

注意，當作為導電膜119a、120a使用Cu-X合金(X為Mn、Ni、Cr、Fe、Co、Mo、Ta或Ti)時，有時因加熱處理而在與絕緣膜接觸的區域中形成覆蓋膜。覆蓋膜由包含X的化合物形成。作為包含X的化合物的一個例子，有X的氧化物、X的氮化物等。藉由在導電膜119a、120a的表面形成覆蓋膜，覆蓋膜成為障壁膜，而可以抑制Cu-X合金膜中的Cu進入氧化物半導體膜中。 Note that when a Cu-X alloy (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti) is used as the conductive films 119a, 120a, it is sometimes formed in a region in contact with the insulating film due to heat treatment Cover film. The cover film is formed of a compound containing X. As an example of a compound containing X, there are X oxide, X nitride, and the like. By forming a cover film on the surfaces of the conductive films 119a and 120a, the cover film becomes a barrier film, so that Cu in the Cu-X alloy film can be suppressed from entering the oxide semiconductor film.

藉由將多層膜107及氧化物半導體膜108中的通道區域的銅的濃度設定為1×1018atoms/cm3以下，能夠降低具有閘極絕緣膜的功能的絕緣膜116、117與多層膜107及氧化物半導體膜108的介面的電子陷阱態密度。其結果是，能夠製造次臨界擺幅值(S值)優異的電晶體。 By setting the copper concentration of the channel region in the multilayer film 107 and the oxide semiconductor film 108 to 1×10 18 atoms/cm 3 or less, it is possible to reduce the insulating films 116 and 117 having the function of a gate insulating film and the multilayer film The density of electron trap states at the interface of 107 and the oxide semiconductor film 108. As a result, a transistor with excellent subcritical swing amplitude (S value) can be manufactured.

另外，如電晶體100i、100j所示，藉由包括圖3A和圖3B所示的形狀的導電膜119、120及絕緣膜116、117，能夠使電晶體的汲極區域的電場弛豫。因此，能夠減輕起因於汲極區域的電場的電晶體的臨界電壓的變 動等劣化。 In addition, as shown in the transistors 100i and 100j, by including the conductive films 119 and 120 and the insulating films 116 and 117 in the shapes shown in FIGS. 3A and 3B, the electric field in the drain region of the transistor can be relaxed. Therefore, it is possible to reduce the deterioration of the threshold voltage of the transistor caused by the electric field in the drain region and the like.

〈半導體裝置的結構3〉 <Structure 3 of Semiconductor Device>

接著，使用圖7A至圖8B說明半導體裝置的其他結構。在此，形成在驅動電路部的電晶體100k為雙閘極結構的電晶體。圖7A為電晶體100k的俯視圖，圖7B為電晶體100z的俯視圖。圖8A是圖7A的點劃線A-B間的剖面圖及圖7B的點劃線C-D間的剖面圖。圖8B是圖7A的點劃線G-H間的剖面圖及圖7B的點劃線I-J間的剖面圖。 Next, another structure of the semiconductor device will be described using FIGS. 7A to 8B. Here, the transistor 100k formed in the drive circuit portion is a transistor with a double gate structure. FIG. 7A is a top view of the transistor 100k, and FIG. 7B is a top view of the transistor 100z. 8A is a cross-sectional view taken along the dash-dot line A-B in FIG. 7A and a cross-sectional view taken along the dash-dot line C-D in FIG. 7B. 8B is a cross-sectional view taken along the dot-dash line G-H in FIG. 7A and a cross-sectional view taken along the dot-dash line I-J in FIG. 7B.

圖8和圖8B所示的電晶體100k包括：基板101上的導電膜102；基板101及導電膜102上的絕緣膜104；絕緣膜104上的多層膜107；接觸於多層膜107的絕緣膜116；以及隔著絕緣膜116與多層膜107重疊的導電膜119。由於多層膜107的結構與〈半導體裝置的結構1〉所示的多層膜107相同，因此省略詳細的說明。 The transistor 100k shown in FIGS. 8 and 8B includes: a conductive film 102 on the substrate 101; an insulating film 104 on the substrate 101 and the conductive film 102; a multilayer film 107 on the insulating film 104; an insulating film contacting the multilayer film 107 116; and a conductive film 119 overlapping the multilayer film 107 via the insulating film 116. Since the structure of the multilayer film 107 is the same as that of the multilayer film 107 shown in <Structure 1 of Semiconductor Device>, detailed description is omitted.

導電膜102及導電膜119具有閘極電極的功能。換言之，電晶體100k是雙閘極結構的電晶體。另外，絕緣膜104及絕緣膜116具有閘極絕緣膜的功能。 The conductive film 102 and the conductive film 119 have the function of gate electrodes. In other words, the transistor 100k is a transistor with a double gate structure. In addition, the insulating film 104 and the insulating film 116 have the function of a gate insulating film.

注意，雖然未圖示，但是導電膜102也可以與整個多層膜107重疊。 Note that although not shown, the conductive film 102 may overlap the entire multilayer film 107.

此外，較佳為在基板101上設置氮化物絕緣膜161。作為氮化物絕緣膜161，有氮化矽膜、氮化鋁膜等。藉由由氮化物絕緣膜161及絕緣膜104a覆蓋導電膜 102，可以防止導電膜102所包含的金屬元素的擴散，所以是較佳的。 In addition, it is preferable to provide a nitride insulating film 161 on the substrate 101. As the nitride insulating film 161, there are a silicon nitride film, an aluminum nitride film, and the like. By covering the conductive film 102 with the nitride insulating film 161 and the insulating film 104a, the diffusion of the metal element contained in the conductive film 102 can be prevented, which is preferable.

在電晶體100k中，藉由使導電膜102與導電膜119不連接並分別對其施加不同的電位，可以控制電晶體100k的臨界電壓。或者，如圖8B所示，藉由使導電膜102與導電膜119連接並對其施加相同的電位，可以降低初始特性偏差，抑制-GBT(-Gate Bias-Temperature)應力測試的劣化，並抑制通態電流的上升電壓在不同的汲極電壓下的變動。另外，藉由如圖8B所示那樣使導電膜102與導電膜119連接，導電膜102、119的電場影響到多層膜107的頂面及側面，因此載子在多層膜107整體中流動。 換言之，由於載子流動的區域在膜厚度方向上進一步增大，因此載子的遷移量增多。其結果是，電晶體100k在通態電流變大的同時，其場效移動率變高。藉由將電晶體的通道長度設定為小於2.5μm或1.45μm以上且2.2μm以下，可以在進一步增大通態電流的同時，提高其場效移動率。另外，由於電晶體100k的通態電流較大，因此能夠縮小其平面的面積。其結果是，能夠製造驅動電路部的佔有面積小且窄邊框化的顯示裝置。 In the transistor 100k, the critical voltage of the transistor 100k can be controlled by disconnecting the conductive film 102 and the conductive film 119 and applying different potentials to them, respectively. Alternatively, as shown in FIG. 8B, by connecting the conductive film 102 and the conductive film 119 and applying the same potential to it, the initial characteristic deviation can be reduced, and the deterioration of the -GBT (-Gate Bias-Temperature) stress test can be suppressed and suppressed The rise of the on-state current varies with different drain voltages. In addition, by connecting the conductive film 102 and the conductive film 119 as shown in FIG. 8B, the electric field of the conductive films 102 and 119 affects the top surface and the side surfaces of the multilayer film 107, so carriers flow through the multilayer film 107 as a whole. In other words, since the region where carriers flow further increases in the film thickness direction, the amount of carrier migration increases. As a result, while the on-state current of the transistor 100k becomes larger, its field effect mobility becomes higher. By setting the channel length of the transistor to less than 2.5 μm or 1.45 μm or more and 2.2 μm or less, it is possible to further increase the on-state current while increasing its field-effect mobility. In addition, since the on-state current of the transistor 100k is large, the area of the plane can be reduced. As a result, it is possible to manufacture a display device with a small occupied area of the drive circuit portion and a narrow frame.

由於電晶體100z可以採用與〈半導體裝置的結構1〉所示的電晶體100h同樣的結構，因此省略詳細的說明。 Since the transistor 100z can adopt the same structure as the transistor 100h shown in <Structure 1 of Semiconductor Device>, detailed description is omitted.

在本實施方式所示的顯示裝置中，在驅動電路部及像素部中，電晶體的結構不同。驅動電路部所包括 的電晶體是雙閘極結構。換言之，驅動電路部包括與像素部相比場效移動率高的電晶體。其結果是，可以製造能夠進行高速工作的驅動電路部。另外，藉由使用能夠進行高速工作的電晶體製造驅動電路部並使用寄生電容及寄生電阻少的電晶體製造像素部，可以製造高清晰且能夠進行倍速驅動的顯示裝置。 In the display device described in this embodiment, the structure of the transistor is different in the drive circuit section and the pixel section. The transistor included in the drive circuit section has a double gate structure. In other words, the drive circuit section includes transistors having a higher field-effect mobility than the pixel section. As a result, a drive circuit section capable of high-speed operation can be manufactured. In addition, by manufacturing the drive circuit portion using transistors capable of high-speed operation and manufacturing the pixel portion using transistors having low parasitic capacitance and parasitic resistance, a high-definition display device capable of double-speed driving can be manufactured.

〈半導體裝置的結構4〉 <Structure 4 of Semiconductor Device>

接著，使用圖9A和圖9B說明半導體裝置的其他結構。在此，在形成於驅動電路部的電晶體100m及形成於像素部的電晶體100n中，具有閘極電極的功能的導電膜119、120為疊層結構。注意，圖9A示出通道長度方向的電晶體100m、100n的剖面圖，圖9B示出通道寬度方向的電晶體100m、100n的剖面圖。 Next, another structure of the semiconductor device will be described using FIGS. 9A and 9B. Here, in the transistor 100 m formed in the driver circuit portion and the transistor 100 n formed in the pixel portion, the conductive films 119 and 120 having the function of gate electrodes have a laminated structure. Note that FIG. 9A shows a cross-sectional view of the transistors 100m, 100n in the channel length direction, and FIG. 9B shows a cross-sectional view of the transistors 100m, 100n in the channel width direction.

導電膜119、120具有與本實施方式的〈半導體裝置的結構2〉所示的導電膜119、120同樣的疊層結構。 The conductive films 119 and 120 have the same laminated structure as the conductive films 119 and 120 shown in <Structure 2 of Semiconductor Device> of this embodiment.

另外，絕緣膜116、117具有與本實施方式的〈半導體裝置的結構2〉所示的絕緣膜116、117同樣的結構。 The insulating films 116 and 117 have the same structure as the insulating films 116 and 117 shown in <Structure 2 of Semiconductor Device> of this embodiment.

如電晶體100m、100n所示，藉由包括圖9A和圖9B所示的形狀的導電膜119、120及絕緣膜116、117，能夠使電晶體的汲極區域的電場弛豫。因此，能夠降低起因於汲極區域的電場的電晶體的臨界電壓的變動等 劣化。 As shown in the transistors 100m and 100n, by including the conductive films 119 and 120 and the insulating films 116 and 117 in the shapes shown in FIGS. 9A and 9B, the electric field in the drain region of the transistor can be relaxed. Therefore, it is possible to reduce the deterioration of the critical voltage of the transistor caused by the electric field in the drain region and the like.

〈半導體裝置的結構5〉 <Structure of Semiconductor Device 5>

接著，使用圖10A和圖10B說明半導體裝置的其他結構。在此，形成在驅動電路部的電晶體111w、111x及形成在像素部的電晶體111y包括多層膜。注意，圖10A示出通道長度方向的電晶體111w、100h的剖面圖，圖10B示出通道長度方向的電晶體111x、111y的剖面圖。 Next, another structure of the semiconductor device will be described using FIGS. 10A and 10B. Here, the transistors 111w and 111x formed in the drive circuit portion and the transistor 111y formed in the pixel portion include a multilayer film. Note that FIG. 10A shows a cross-sectional view of the transistors 111w, 100h in the channel length direction, and FIG. 10B shows a cross-sectional view of the transistors 111x, 111y in the channel length direction.

圖10A所示的電晶體111w所包括的多層膜107包括通道區域107a及低電阻區域107b、107c。另外，通道區域107a包括：接觸於絕緣膜104的通道區域142a；接觸於通道區域142a的通道區域105a；以及接觸於通道區域105a的通道區域106a。低電阻區域107b包括：接觸於絕緣膜104的低電阻區域142b；接觸於低電阻區域142b的低電阻區域105b；以及接觸於低電阻區域105b的低電阻區域106b。低電阻區域107c包括：接觸於絕緣膜104的低電阻區域142c；接觸於低電阻區域142c的低電阻區域105c；以及接觸於低電阻區域105c的低電阻區域106c。注意，雖然在圖10A和圖10B中未圖示，但是將包括通道區域142a、低電阻區域142b及低電阻區域142c的氧化物半導體膜稱為氧化物半導體膜142。換言之，多層膜107依次層疊有氧化物半導體膜142、氧化物半導體膜105及氧化物半導體膜106。 The multilayer film 107 included in the transistor 111w shown in FIG. 10A includes a channel region 107a and low resistance regions 107b and 107c. In addition, the channel region 107a includes: a channel region 142a contacting the insulating film 104; a channel region 105a contacting the channel region 142a; and a channel region 106a contacting the channel region 105a. The low resistance region 107b includes: a low resistance region 142b contacting the insulating film 104; a low resistance region 105b contacting the low resistance region 142b; and a low resistance region 106b contacting the low resistance region 105b. The low resistance region 107c includes: a low resistance region 142c contacting the insulating film 104; a low resistance region 105c contacting the low resistance region 142c; and a low resistance region 106c contacting the low resistance region 105c. Note that although not shown in FIGS. 10A and 10B, the oxide semiconductor film including the channel region 142a, the low resistance region 142b, and the low resistance region 142c is referred to as the oxide semiconductor film 142. In other words, in the multilayer film 107, the oxide semiconductor film 142, the oxide semiconductor film 105, and the oxide semiconductor film 106 are sequentially stacked.

圖10B所示的電晶體111x所包括的多層膜 107包括通道區域107a及低電阻區域107b、107c。另外，通道區域107a包括：接觸於絕緣膜104的通道區域142a；接觸於通道區域142a的通道區域105a；接觸於通道區域105a的通道區域106a；以及接觸於通道區域106a的通道區域143a。低電阻區域107b包括：接觸於絕緣膜104的低電阻區域142b；接觸於低電阻區域142b的低電阻區域105b；接觸於低電阻區域105b的低電阻區域106b；以及接觸於低電阻區域106b的低電阻區域143b。低電阻區域107c包括：接觸於絕緣膜104的低電阻區域142c；接觸於低電阻區域142c的低電阻區域105c；接觸於低電阻區域105c的低電阻區域106c；以及接觸於低電阻區域106c的低電阻區域143c。注意，雖然在圖10A和圖10B中未圖示，但是將包括通道區域143a、低電阻區域143b及低電阻區域143c的氧化物半導體膜稱為氧化物半導體膜143。換言之，多層膜107依次層疊有氧化物半導體膜142、氧化物半導體膜105、氧化物半導體膜106及氧化物半導體膜143。 The multilayer film 107 included in the transistor 111x shown in FIG. 10B includes a channel region 107a and low resistance regions 107b and 107c. In addition, the channel region 107a includes: a channel region 142a that contacts the insulating film 104; a channel region 105a that contacts the channel region 142a; a channel region 106a that contacts the channel region 105a; and a channel region 143a that contacts the channel region 106a. The low resistance region 107b includes: a low resistance region 142b contacting the insulating film 104; a low resistance region 105b contacting the low resistance region 142b; a low resistance region 106b contacting the low resistance region 105b; and a low resistance region 106b contacting the low resistance region 106b Resistance area 143b. The low resistance region 107c includes: a low resistance region 142c contacting the insulating film 104; a low resistance region 105c contacting the low resistance region 142c; a low resistance region 106c contacting the low resistance region 105c; and a low resistance region 106c contacting the low resistance region 106c Resistance area 143c. Note that although not shown in FIGS. 10A and 10B, the oxide semiconductor film including the channel region 143a, the low resistance region 143b, and the low resistance region 143c is referred to as an oxide semiconductor film 143. In other words, in the multilayer film 107, the oxide semiconductor film 142, the oxide semiconductor film 105, the oxide semiconductor film 106, and the oxide semiconductor film 143 are sequentially stacked.

圖10B所示的電晶體111y所包括的多層膜110包括通道區域110a及低電阻區域110b、110c。另外，通道區域110a包括：接觸於絕緣膜104的通道區域108a；以及接觸於通道區域108a的通道區域144a。低電阻區域110b包括：接觸於絕緣膜104的低電阻區域108b；以及接觸於低電阻區域108b的低電阻區域144b。低電阻區域110c包括：接觸於絕緣膜104的低電阻區域 108c；以及接觸於低電阻區域108c的低電阻區域144c。注意，雖然在圖10A和圖10B中未圖示，但是將包括通道區域144a、低電阻區域144b及低電阻區域144c的氧化物半導體膜稱為氧化物半導體膜144。換言之，多層膜110依次層疊有氧化物半導體膜108及氧化物半導體膜144。 The multilayer film 110 included in the transistor 111y shown in FIG. 10B includes a channel region 110a and low resistance regions 110b and 110c. In addition, the channel region 110a includes: a channel region 108a contacting the insulating film 104; and a channel region 144a contacting the channel region 108a. The low resistance region 110b includes: a low resistance region 108b contacting the insulating film 104; and a low resistance region 144b contacting the low resistance region 108b. The low resistance region 110c includes: a low resistance region 108c contacting the insulating film 104; and a low resistance region 144c contacting the low resistance region 108c. Note that although not shown in FIGS. 10A and 10B, the oxide semiconductor film including the channel region 144a, the low resistance region 144b, and the low resistance region 144c is referred to as an oxide semiconductor film 144. In other words, in the multilayer film 110, the oxide semiconductor film 108 and the oxide semiconductor film 144 are sequentially stacked.

氧化物半導體膜142、143、144較佳為與氧化物半導體膜105、106、108相比能隙大、電子親和力小、且絕緣性高。另外，氧化物半導體膜142、143、144較佳為與氧化物半導體膜105、106、108相比銦的含有量少。另外，氧化物半導體膜142、143、144較佳為具有遮蔽來自外部的雜質的功能。在這種氧化物半導體膜中，In的原子個數比小於M(M為Mg、Al、Ti、Ga、Y、Zr、La、Ce、Nd或Hf)的原子個數比。當氧化物半導體膜142、143、144包含In-M-Zn氧化物(M為Mg、Al、Ti、Ga、Y、Zr、La、Ce、Nd或Hf)時，在用來形成氧化物半導體膜142、143、144的靶材的金屬元素的原子個數比為In：M：Zn=x3：y3：z3的情況下，x3/y3較佳為1/6以上且小於1。另外，z3/y3較佳為1/3以上且6以下，更佳為1以上且6以下。藉由將z3/y3設定為1以上且6以下，作為氧化物半導體膜142、143、144的CAAC-OS膜的形成變得容易。作為靶材的金屬元素的原子個數比的代表例子，有In：M：Zn=1：3：2、In：M：Zn=1：3：4、In：M：Zn=1：3：6、In：M：Zn=1：3：8、In：M：Zn=1： 4：4、In：M：Zn=1：4：5、In：M：Zn=1：4：6、In：M：Zn=1：4：7、In：M：Zn=1：4：8、In：M：Zn=1：5：5、In：M：Zn=1：5：6、In：M：Zn=1：5：7、In：M：Zn=1：5：8、In：M：Zn=1：6：8等。 The oxide semiconductor films 142, 143, and 144 preferably have a larger energy gap, lower electron affinity, and higher insulation than the oxide semiconductor films 105, 106, and 108. In addition, the oxide semiconductor films 142, 143, and 144 preferably have a smaller indium content than the oxide semiconductor films 105, 106, and 108. In addition, the oxide semiconductor films 142, 143, and 144 preferably have a function of shielding impurities from the outside. In such an oxide semiconductor film, the atomic number ratio of In is smaller than that of M (M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf). When the oxide semiconductor films 142, 143, and 144 contain In-M-Zn oxide (M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf), they are used to form an oxide semiconductor When the atomic number ratio of the metal elements of the targets of the films 142, 143, and 144 is In: M: Zn=x 3 : y 3 : z 3 , x 3 /y 3 is preferably 1/6 or more and less than 1. In addition, z 3 /y 3 is preferably 1/3 or more and 6 or less, and more preferably 1 or more and 6 or less. By setting z 3 /y 3 to 1 or more and 6 or less, the formation of the CAAC-OS film as the oxide semiconductor films 142, 143, and 144 becomes easy. Representative examples of the atomic number ratio of the metal elements of the target include In:M:Zn=1:3:2, In:M:Zn=1:3:4, In:M:Zn=1:3: 6. In: M: Zn=1: 3:8, In: M: Zn=1: 4: 4, In: M: Zn=1: 4: 5, In: M: Zn=1: 4: 6, In: M: Zn=1: 4: 7, In: M: Zn=1: 4: 8, In: M: Zn=1: 5: 5, In: M: Zn=1: 5: 6, In: M:Zn=1:5:7, In:M:Zn=1:5:8, In:M:Zn=1:6:8 and so on.

在圖10A所示的電晶體111w中，氧化物半導體膜142與氧化物半導體膜105相比能隙大且電子親和力小，因此在氧化物半導體膜105中形成通道。即，實現埋入通道結構。另外，由於電晶體111w包括包含一種以上的構成氧化物半導體膜105的金屬元素的氧化物半導體膜106及氧化物半導體膜142，因此不容易在氧化物半導體膜105與氧化物半導體膜106的介面及氧化物半導體膜105與氧化物半導體膜142的介面形成介面能階。因此，藉由設置氧化物半導體膜106及氧化物半導體膜142，可以降低電晶體的臨界電壓等的電特性的偏差或變動。 In the transistor 111w shown in FIG. 10A, the oxide semiconductor film 142 has a larger energy gap and a smaller electron affinity than the oxide semiconductor film 105, so a channel is formed in the oxide semiconductor film 105. That is, a buried channel structure is realized. In addition, since the transistor 111w includes the oxide semiconductor film 106 and the oxide semiconductor film 142 including more than one metal element constituting the oxide semiconductor film 105, it is not easy to interface between the oxide semiconductor film 105 and the oxide semiconductor film 106 The interface between the oxide semiconductor film 105 and the oxide semiconductor film 142 forms an interface level. Therefore, by providing the oxide semiconductor film 106 and the oxide semiconductor film 142, it is possible to reduce the variation or variation in the electrical characteristics such as the critical voltage of the transistor.

另外，同樣地，在圖10B所示的電晶體111x中，氧化物半導體膜142、143與氧化物半導體膜105、106相比能隙大且電子親和力小，因此在氧化物半導體膜105中形成通道。即，實現埋入通道結構。另外，藉由形成包括氧化物半導體膜142、143的多層膜107，氧化物半導體膜142與氧化物半導體膜105的介面、氧化物半導體膜105與氧化物半導體膜106的介面及氧化物半導體膜106與氧化物半導體膜143的介面不容易形成介面能階。其結果是，可以降低電晶體的臨界電壓等的電特性的偏差或變動。 In addition, similarly, in the transistor 111x shown in FIG. 10B, the oxide semiconductor films 142 and 143 have a larger energy gap and a smaller electron affinity than the oxide semiconductor films 105 and 106, and therefore are formed in the oxide semiconductor film 105. aisle. That is, a buried channel structure is realized. In addition, by forming the multilayer film 107 including the oxide semiconductor films 142 and 143, the interface between the oxide semiconductor film 142 and the oxide semiconductor film 105, the interface between the oxide semiconductor film 105 and the oxide semiconductor film 106, and the oxide semiconductor film The interface between 106 and the oxide semiconductor film 143 is not easy to form an interface level. As a result, it is possible to reduce variations or fluctuations in the electrical characteristics such as the critical voltage of the transistor.

另外，同樣地，在圖10B所示的電晶體111y中，藉由形成包括氧化物半導體膜144的多層膜110，氧化物半導體膜144與氧化物半導體膜108的介面不容易形成介面能階。其結果是，可以降低電晶體的臨界電壓等的電特性的偏差或變動。 In addition, similarly, in the transistor 111y shown in FIG. 10B, by forming the multilayer film 110 including the oxide semiconductor film 144, the interface between the oxide semiconductor film 144 and the oxide semiconductor film 108 cannot easily form an interface level. As a result, it is possible to reduce variations or fluctuations in the electrical characteristics such as the critical voltage of the transistor.

〈能帶結構〉 <Energy band structure>

接著，作為本實施方式所示的電晶體的典型例子，說明圖8A和圖8B所示的電晶體100k的任意剖面中的能帶結構。 Next, as a typical example of the transistor shown in this embodiment, an energy band structure in an arbitrary cross section of the transistor 100k shown in FIGS. 8A and 8B will be described.

圖28A示出包括圖8A所示的電晶體100k的通道區域的O-P間的剖面的能帶結構。注意，通道區域106a的能隙稍微大於通道區域105a的能隙。另外，絕緣膜104a、絕緣膜104b及絕緣膜116的能隙充分大於通道區域106a及通道區域105a。此外，假設通道區域106a、通道區域105a、絕緣膜104a、絕緣膜104b及絕緣膜116的費米能階(記為Ef)都與本質費米能階(記為Ei)大致相同。另外，導電膜102及導電膜119的功函數與該費米能階大致相同。 FIG. 28A shows an energy band structure of a cross section between O-P including the channel region of the transistor 100k shown in FIG. 8A. Note that the energy gap of the channel region 106a is slightly larger than the energy gap of the channel region 105a. In addition, the energy gaps of the insulating film 104a, the insulating film 104b, and the insulating film 116 are sufficiently larger than the channel region 106a and the channel region 105a. In addition, it is assumed that the Fermi level (denoted as Ef) of the channel region 106a, the channel region 105a, the insulating film 104a, the insulating film 104b, and the insulating film 116 are substantially the same as the intrinsic Fermi level (denoted as Ei). In addition, the work functions of the conductive film 102 and the conductive film 119 are substantially the same as the Fermi level.

當將閘極電壓設定為電晶體的臨界電壓以上時，由於通道區域106a與通道區域105a之間的導帶底能量的差，電子優先地流過通道區域105a。也就是說，可以推測電子埋入在通道區域105a中。注意，將導帶底的能量記為Ec，將價帶頂的能量記為Ev。 When the gate voltage is set to be higher than the critical voltage of the transistor, electrons flow preferentially through the channel region 105a due to the difference in the conduction band bottom energy between the channel region 106a and the channel region 105a. That is, it can be presumed that electrons are buried in the channel region 105a. Note that the energy at the bottom of the conduction band is recorded as Ec, and the energy at the top of the valence band is recorded as Ev.

因此，根據本發明的一個方式的電晶體藉由電子的埋入而降低其介面的散射。因此，根據本發明的一個方式的電晶體的通道電阻小。 Therefore, the transistor according to one aspect of the present invention reduces the scattering of its interface by embedding electrons. Therefore, the transistor according to one aspect of the present invention has a small channel resistance.

接著，圖28B示出包括圖8A所示的電晶體100k的源極區域或汲極區域的Q-R間的剖面的能帶結構。注意，低電阻區域105b、105c、106b、106c處於簡併態(degenerate state)。也就是說，在低電阻區域105b、105c、106b、106c中，費米能階Ef與導帶底的能量Ec大致相同。另外，低電阻區域105b的導帶底的能量與通道區域105a的費米能階大致相同。此外，低電阻區域106b的導帶底的能量與通道區域106a的費米能階大致相同。低電阻區域105c及低電阻區域106c也是同樣的情況。 Next, FIG. 28B shows an energy band structure including a cross section between Q-R of the source region or the drain region of the transistor 100k shown in FIG. 8A. Note that the low-resistance regions 105b, 105c, 106b, and 106c are in a degenerate state. That is, in the low-resistance regions 105b, 105c, 106b, and 106c, the Fermi level Ef is approximately the same as the energy Ec at the bottom of the conduction band. In addition, the energy at the bottom of the conduction band of the low-resistance region 105b is approximately the same as the Fermi level of the channel region 105a. In addition, the energy at the bottom of the conduction band of the low resistance region 106b is approximately the same as the Fermi energy level of the channel region 106a. The same applies to the low-resistance region 105c and the low-resistance region 106c.

此時，因為導電膜134與低電阻區域106b之間的能障足夠小，所以成為歐姆接觸。此外，低電阻區域106b與低電阻區域105b成為歐姆接觸。同樣地，導電膜135與低電阻區域106c之間的能障足夠小，所以成為歐姆接觸。此外，低電阻區域106c與低電阻區域105c成為歐姆接觸。因此，可知在導電膜134及導電膜135與通道區域106a及通道區域105a之間順利地進行電子的授受。 At this time, because the energy barrier between the conductive film 134 and the low resistance region 106b is sufficiently small, it becomes an ohmic contact. In addition, the low resistance region 106b and the low resistance region 105b are in ohmic contact. Similarly, the energy barrier between the conductive film 135 and the low-resistance region 106c is sufficiently small, so it becomes an ohmic contact. In addition, the low resistance region 106c and the low resistance region 105c are in ohmic contact. Therefore, it can be seen that electrons are smoothly transferred between the conductive film 134 and the conductive film 135 and the channel region 106a and the channel region 105a.

如上所述，在根據本發明的一個方式的電晶體中，在源極電極以及汲極電極與通道區域之間順利地進行電子的授受，並且其通道電阻小。即，可知上述電晶體具有良好的開關特性。 As described above, in the transistor according to one aspect of the present invention, electrons are smoothly transferred between the source electrode and the drain electrode and the channel region, and the channel resistance is small. That is, it can be seen that the above transistor has good switching characteristics.

〈半導體裝置的製造方法1〉 <Manufacturing method 1 of semiconductor device>

接下來，參照圖4A至圖6B說明圖1A和圖1B及圖2A和圖2B所示的電晶體100g、100h的製造方法。 Next, a method of manufacturing the transistors 100g and 100h shown in FIGS. 1A and 1B and 2A and 2B will be described with reference to FIGS. 4A to 6B.

構成電晶體100g、100h的膜(絕緣膜、氧化物半導體膜、導電膜等)可以藉由濺射法、化學氣相沉積(CVD)法、真空蒸鍍法、脈衝雷射沉積(PLD)法形成。或者，可以藉由塗佈法或印刷法形成。作為成膜方法，典型的有濺射法、電漿化學氣相沉積(PECVD)法，但也可以使用熱CVD法。作為熱CVD法的例子，可以使用MOCVD(有機金屬化學氣相沉積)法或ALD(原子層沉積)法。 Films (insulating films, oxide semiconductor films, conductive films, etc.) that make up 100g and 100h of transistors can be formed by sputtering, chemical vapor deposition (CVD), vacuum evaporation, pulsed laser deposition (PLD) form. Alternatively, it can be formed by a coating method or a printing method. As the film forming method, there are typically a sputtering method and a plasma chemical vapor deposition (PECVD) method, but a thermal CVD method can also be used. As an example of the thermal CVD method, a MOCVD (Organic Metal Chemical Vapor Deposition) method or an ALD (Atomic Layer Deposition) method can be used.

藉由熱CVD法進行的成膜可以按以如下方式來執行：藉由將處理室內的壓力設定為大氣壓或減壓，將源氣體及氧化劑同時供應到處理室內，並使其在基板附近或基板上相互反應而沉積在基板上。如此，由於熱CVD法不產生電漿來形成膜，因此具有不產生起因於電漿損傷的缺陷的優點。 The film formation by the thermal CVD method can be performed as follows: by setting the pressure in the processing chamber to atmospheric pressure or reduced pressure, the source gas and the oxidizing agent are simultaneously supplied into the processing chamber, and are brought near the substrate or the substrate It reacts with each other and is deposited on the substrate. In this manner, since the thermal CVD method does not generate plasma to form a film, there is an advantage that defects due to plasma damage are not generated.

另外，藉由ALD法進行的成膜可以按如下方式來執行：將處理室內的壓力設定為大氣壓或減壓，將用於反應的源氣體依次引入處理室內，然後按該順序反復地引入氣體。例如，藉由切換各自的開關閥(也稱為高速閥)來將兩種以上的源氣體依次供應到處理室內。在該情況下，以防止多種源氣體混合的方式在將第一源氣體引入的同時或之後將惰性氣體(氬或氮等)等引入，然後將第二源 氣體引入。注意，在將第一源氣體和惰性氣體同時引入的情況下，惰性氣體成為載子氣體，並且，惰性氣體也可以在將第二源氣體引入的同時引入。另外，也可以不引入惰性氣體而藉由真空抽氣將第一源氣體排出，然後引入第二源氣體。第一源氣體吸附於基板表面上，以形成第一單原子層；然後第二源氣體被引入以與第一單原子層起反應；其結果是，第二單原子層層疊於第一單原子層上，從而形成薄膜。 In addition, the film formation by the ALD method can be performed as follows: the pressure in the processing chamber is set to atmospheric pressure or reduced pressure, the source gas for the reaction is sequentially introduced into the processing chamber, and then the gas is repeatedly introduced in this order. For example, by switching the respective on-off valves (also called high-speed valves), two or more source gases are sequentially supplied into the processing chamber. In this case, an inert gas (argon, nitrogen, etc.) or the like is introduced at the same time as or after the introduction of the first source gas in a manner to prevent mixing of multiple source gases, and then the second source gas is introduced. Note that in the case where the first source gas and the inert gas are introduced at the same time, the inert gas becomes a carrier gas, and the inert gas may also be introduced while introducing the second source gas. In addition, the first source gas may be exhausted by vacuum exhaust without introducing an inert gas, and then the second source gas may be introduced. The first source gas is adsorbed on the substrate surface to form a first monoatomic layer; then the second source gas is introduced to react with the first monoatomic layer; as a result, the second monoatomic layer is stacked on the first monoatomic layer Layer to form a thin film.

藉由按該順序反復多次地引入氣體直到獲得所希望的厚度為止，可以形成步階覆蓋性良好的薄膜。薄膜的厚度可以藉由按該順序反復引入氣體的次數來調整，因此ALD法能夠精確地調整膜厚度，因而適用於製造微型電晶體。 By repeatedly introducing gas in this order multiple times until the desired thickness is obtained, a thin film with good step coverage can be formed. The thickness of the thin film can be adjusted by repeatedly introducing the gas in this order, so the ALD method can accurately adjust the thickness of the film, and is therefore suitable for manufacturing micro transistors.

如圖4A所示，在基板101上形成絕緣膜104。接著，在驅動電路部的絕緣膜104上形成氧化物半導體膜105。 As shown in FIG. 4A, an insulating film 104 is formed on the substrate 101. Next, an oxide semiconductor film 105 is formed on the insulating film 104 of the drive circuit section.

絕緣膜104可以藉由適當地利用濺射法、CVD法、蒸鍍法、脈衝雷射沉積(PLD)法、印刷法、塗佈法等形成。另外，可以在基板101上形成絕緣膜之後對該絕緣膜添加氧，來形成絕緣膜104。作為對絕緣膜添加的氧，有氧自由基、氧原子、氧原子離子、氧分子離子等。此外，作為添加方法，有離子摻雜法、離子植入法、電漿處理法等。另外，也可以在絕緣膜上形成抑制氧脫離的膜之後，經過該膜對絕緣膜添加氧。 The insulating film 104 can be formed by appropriately using a sputtering method, a CVD method, an evaporation method, a pulsed laser deposition (PLD) method, a printing method, a coating method, and the like. In addition, after forming an insulating film on the substrate 101, oxygen may be added to the insulating film to form the insulating film 104. As the oxygen added to the insulating film, there are oxygen radicals, oxygen atoms, oxygen atom ions, oxygen molecular ions, and the like. In addition, as the addition method, there are an ion doping method, an ion implantation method, a plasma treatment method, and the like. In addition, after forming a film that suppresses oxygen detachment on the insulating film, oxygen may be added to the insulating film through the film.

此外，利用如下條件形成能夠藉由加熱處理使氧釋放的氧化矽膜或氧氮化矽膜作為絕緣膜104：將設置在電漿CVD設備的抽成真空的處理室內的基板保持在180℃以上且280℃以下或在200℃以上且240℃以下的溫度，將源氣體引入處理室內而將處理室內的壓力設定為100Pa以上且250Pa以下或100Pa以上且200Pa以下，並對設置在處理室內的電極供應0.17W/cm2以上且0.5W/cm2以下，或0.25W/cm2以上且0.35W/cm2以下的高頻功率。 In addition, a silicon oxide film or a silicon oxynitride film capable of releasing oxygen by heat treatment is formed as the insulating film 104 under the following conditions: the substrate provided in the evacuated processing chamber of the plasma CVD equipment is maintained at 180°C or higher And at a temperature of 280°C or lower or 200°C or higher and 240°C or lower, the source gas is introduced into the processing chamber and the pressure in the processing chamber is set to 100 Pa or higher and 250 Pa or lower or 100 Pa or higher and 200 Pa or lower. supply 0.17W / cm 2 and not more than 0.5W / cm 2 or less, or 0.25W / cm 2 and not more than 0.35W / cm 2 or less of the high-frequency power.

在此，可以以層疊絕緣膜104a及絕緣膜104b的方式形成絕緣膜104。例如，作為絕緣膜104a藉由利用電漿CVD法形成100nm厚的氮化矽膜，作為絕緣膜104b藉由利用電漿CVD法形成300nm厚的氧氮化矽膜。 Here, the insulating film 104 may be formed such that the insulating film 104a and the insulating film 104b are stacked. For example, as the insulating film 104a, a 100-nm-thick silicon nitride film is formed by the plasma CVD method, and as the insulating film 104b, a 300-nm-thick silicon oxynitride film is formed by the plasma CVD method.

下面，對氧化物半導體膜105的形成方法進行說明。在絕緣膜104上藉由濺射法、塗佈法、脈衝雷射蒸鍍法、雷射剝蝕法、熱CVD法等形成氧化物半導體膜。接著，在氧化物半導體膜上藉由光微影製程形成遮罩之後，使用該遮罩對氧化物半導體膜的一部分進行蝕刻，由此可以如圖4A所示那樣形成氧化物半導體膜105。然後，去除遮罩。另外，也可以在藉由對氧化物半導體膜的一部分進行蝕刻形成氧化物半導體膜105之後，進行加熱處理。 Next, a method of forming the oxide semiconductor film 105 will be described. An oxide semiconductor film is formed on the insulating film 104 by a sputtering method, a coating method, a pulsed laser evaporation method, a laser ablation method, a thermal CVD method, or the like. Next, after forming a mask on the oxide semiconductor film by a photolithography process, a part of the oxide semiconductor film is etched using the mask, whereby the oxide semiconductor film 105 can be formed as shown in FIG. 4A. Then, remove the mask. In addition, after the oxide semiconductor film 105 is formed by etching a part of the oxide semiconductor film, heat treatment may be performed.

或者，藉由利用印刷法形成氧化物半導體膜105，可以直接形成元件隔離的氧化物半導體膜105。 Alternatively, by forming the oxide semiconductor film 105 by a printing method, the element-isolated oxide semiconductor film 105 can be directly formed.

在藉由濺射法形成氧化物半導體膜的情況下，作為用來產生電漿的電源裝置，可以適當地使用RF電源裝置、AC電源裝置、DC電源裝置等。藉由使用AC電源裝置或DC電源裝置，可以形成CAAC-OS膜。另外，與藉由使用RF電源裝置的濺射法形成氧化物半導體膜的情況相比，藉由使用AC電源裝置或DC電源裝置的濺射法形成氧化物半導體膜，可以使該膜的厚度、組成或結晶性的分佈均勻，所以是較佳的。 In the case of forming an oxide semiconductor film by a sputtering method, as a power supply device for generating plasma, an RF power supply device, an AC power supply device, a DC power supply device, or the like can be suitably used. By using an AC power supply device or a DC power supply device, a CAAC-OS film can be formed. In addition, compared to the case of forming an oxide semiconductor film by a sputtering method using an RF power supply device, the thickness of the film can be reduced by forming an oxide semiconductor film by a sputtering method using an AC power supply device or a DC power supply device. The distribution of composition or crystallinity is uniform, so it is preferable.

作為濺射氣體，適當地使用稀有氣體(典型的是氬)、氧、稀有氣體和氧的混合氣體。注意，當採用稀有氣體和氧的混合氣體時，較佳為增高相對於稀有氣體的氧氣體比例。 As the sputtering gas, a rare gas (typically argon), oxygen, a mixed gas of rare gas and oxygen is suitably used. Note that when a mixed gas of rare gas and oxygen is used, it is preferable to increase the proportion of oxygen gas relative to the rare gas.

另外，當金屬元素的原子個數比為In：M：Zn=x1：y1：z1的情況下，使用x1/y1大於1且為6以下的In-M-Zn氧化物(M為Mg、Al、Ti、Ga、Y、Zr、La、Ce、Nd或Hf)靶材形成氧化物半導體膜105。 In addition, when the atomic number ratio of the metal element is In:M:Zn=x 1 :y 1 :z 1 , an In-M-Zn oxide with x 1 /y 1 greater than 1 and 6 or less ( M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd or Hf) and the oxide semiconductor film 105 is formed.

另外，在形成氧化物半導體膜時例如使用濺射法的情況下，藉由將基板溫度設定為150℃以上且750℃以下，或150℃以上且450℃以下，或200℃以上且350℃以下來形成氧化物半導體膜，可以形成CAAC-OS膜。此外，藉由將基板溫度設定為25℃以上且低於150℃，可以形成微晶氧化物半導體膜。 In addition, when a sputtering method is used when forming an oxide semiconductor film, for example, by setting the substrate temperature to 150° C. or more and 750° C. or less, or 150° C. or more and 450° C. or less, or 200° C. or more and 350° C. or less To form an oxide semiconductor film, a CAAC-OS film can be formed. In addition, by setting the substrate temperature to 25°C or higher and lower than 150°C, a microcrystalline oxide semiconductor film can be formed.

另外，為了形成將在後面說明的CAAC-OS膜，較佳為應用如下條件。 In addition, in order to form a CAAC-OS film which will be described later, it is preferable to apply the following conditions.

藉由抑制成膜時的雜質混入，可以抑制雜質所導致的結晶態的損壞。例如，降低存在於成膜室內的雜質濃度(氫、水、二氧化碳及氮等)即可。另外，降低成膜氣體中的雜質濃度即可。明確而言，使用露點為-80℃以下，或-100℃以下的成膜氣體。 By suppressing the mixing of impurities during film formation, the damage of the crystal state caused by the impurities can be suppressed. For example, the concentration of impurities (hydrogen, water, carbon dioxide, nitrogen, etc.) existing in the film forming chamber may be reduced. In addition, the impurity concentration in the film forming gas may be reduced. Specifically, a film-forming gas having a dew point of -80°C or lower, or -100°C or lower is used.

另外，較佳的是，藉由增高成膜氣體中的氧比例並對電力進行最佳化，來減輕成膜時的電漿損傷。將成膜氣體中的氧比例設定為30vol.%以上，或100vol.%。 In addition, it is preferable to reduce plasma damage during film formation by increasing the oxygen ratio in the film forming gas and optimizing power. The proportion of oxygen in the film-forming gas is set to 30 vol.% or more, or 100 vol.%.

另外，也可以在形成氧化物半導體膜之後藉由進行加熱處理來實現氧化物半導體膜的脫氫化或脫水化。典型的是，該加熱處理的溫度為150℃以上且低於基板的應變點，或250℃以上且450℃以下，或300℃以上且450℃以下。 In addition, deoxidation or dehydration of the oxide semiconductor film may be performed by performing heat treatment after forming the oxide semiconductor film. Typically, the temperature of this heat treatment is 150°C or higher and lower than the strain point of the substrate, or 250°C or higher and 450°C or lower, or 300°C or higher and 450°C or lower.

在包含氦、氖、氬、氙、氪等稀有氣體或包含氮的惰性氣體氛圍中進行加熱處理。或者，也可以在惰性氣體氛圍中進行加熱之後在氧氛圍中進行加熱。另外，上述惰性氣體氛圍及氧氛圍較佳為不包含氫、水等。處理時間是3分鐘以上且24小時以下。 Heat treatment is performed in a rare gas atmosphere including helium, neon, argon, xenon, krypton, or an inert gas atmosphere including nitrogen. Alternatively, it may be heated in an inert gas atmosphere and then heated in an oxygen atmosphere. In addition, the above-mentioned inert gas atmosphere and oxygen atmosphere preferably do not contain hydrogen, water, or the like. The processing time is 3 minutes or more and 24 hours or less.

該加熱處理可以使用電爐、RTA裝置等。藉由使用RTA裝置，可以限定於短時間內在基板的應變點以上的溫度下進行加熱處理。由此，可以縮短加熱處理時間。 For this heat treatment, an electric furnace, an RTA device, or the like can be used. By using an RTA device, heat treatment can be performed at a temperature above the strain point of the substrate within a short time. Thus, the heat treatment time can be shortened.

邊對氧化物半導體膜進行加熱邊形成該氧化物半導體膜，或者在形成氧化物半導體膜之後進行加熱處 理，由此，藉由二次離子質譜分析法得到的氧化物半導體膜中的氫濃度可以為5×1019atoms/cm3以下，或1×1019atoms/cm3以下，或5×1018atoms/cm3以下，或1×1018atoms/cm3以下，或5×1017atoms/cm3以下，或1×1016atoms/cm3以下。 The oxide semiconductor film is formed while heating the oxide semiconductor film, or after the oxide semiconductor film is formed and then subjected to heat treatment, the hydrogen concentration in the oxide semiconductor film obtained by secondary ion mass spectrometry can be 5×10 19 atoms/cm 3 or less, or 1×10 19 atoms/cm 3 or less, or 5×10 18 atoms/cm 3 or less, or 1×10 18 atoms/cm 3 or less, or 5×10 17 atoms /cm 3 or less, or 1×10 16 atoms/cm 3 or less.

當使用利用ALD的沉積裝置來形成氧化物半導體膜如InGaZnOX(X>0)膜時，依次反復引入In(CH3)3氣體和O3氣體形成InO2層，同時引入Ga(CH3)3氣體和O3氣體形成GaO層，然後同時引入Zn(CH3)2氣體和O3氣體形成ZnO層。注意，這些層的順序不侷限於上述例子。此外，也可以混合這些氣體來形成混合化合物層如InGaO2層、InZnO2層、GaInO層、ZnInO層、GaZnO層等。注意，雖然也可以使用利用Ar等惰性氣體使其起泡的H2O氣體來代替O3氣體，但較佳為使用不含有H的O3氣體。還可以使用In(C2H5)3氣體代替In(CH3)3氣體。還可以使用Ga(C2H5)3氣體代替Ga(CH3)3氣體。另外，也可以使用Zn(CH3)2氣體代替Zn(C2H5)2氣體。 When a deposition apparatus using ALD is used to form an oxide semiconductor film such as an InGaZnO X (X>0) film, In(CH 3 ) 3 gas and O 3 gas are sequentially introduced repeatedly to form an InO 2 layer, and Ga(CH 3 ) is introduced at the same time The 3 gas and O 3 gas form a GaO layer, and then Zn(CH 3 ) 2 gas and O 3 gas are simultaneously introduced to form a ZnO layer. Note that the order of these layers is not limited to the above example. In addition, these gases may be mixed to form mixed compound layers such as InGaO 2 layer, InZnO 2 layer, GaInO layer, ZnInO layer, GaZnO layer, and the like. Note that, although it may be used by using an inert gas such as Ar bubbling of H 2 O gas in place of the O 3 gas, but is preferably not containing H O 3 gas. It is also possible to use In(C 2 H 5 ) 3 gas instead of In(CH 3 ) 3 gas. It is also possible to use Ga(C 2 H 5 ) 3 gas instead of Ga(CH 3 ) 3 gas. In addition, Zn(CH 3 ) 2 gas may be used instead of Zn(C 2 H 5 ) 2 gas.

在此，利用濺射法形成35nm厚的氧化物半導體膜。接著，在該氧化物半導體膜上形成遮罩，並選擇性地對氧化物半導體膜的一部分進行蝕刻，來形成氧化物半導體膜105。作為氧化物半導體膜105，形成In：Ga：Zn=3：1：2的In-Ga-Zn氧化物膜。 Here, an oxide semiconductor film with a thickness of 35 nm is formed by a sputtering method. Next, a mask is formed on the oxide semiconductor film, and a part of the oxide semiconductor film is selectively etched to form the oxide semiconductor film 105. As the oxide semiconductor film 105, an In-Ga-Zn oxide film of In:Ga:Zn=3:1:2 is formed.

接著，如圖4B所示，在驅動電路部中的氧化物半導體膜105上形成氧化物半導體膜106，並在像素部 中形成氧化物半導體膜108。換言之，形成依次層疊有氧化物半導體膜105及氧化物半導體膜106的多層膜107。 Next, as shown in FIG. 4B, an oxide semiconductor film 106 is formed on the oxide semiconductor film 105 in the driver circuit portion, and an oxide semiconductor film 108 is formed in the pixel portion. In other words, the multilayer film 107 in which the oxide semiconductor film 105 and the oxide semiconductor film 106 are sequentially stacked is formed.

注意，在該製程中，藉由以覆蓋氧化物半導體膜105的頂面及側面的方式形成氧化物半導體膜106，防止氧化物半導體膜105在後面的形成具有源極電極及汲極電極的功能的導電膜的製程中被蝕刻。其結果是，可以降低電晶體的通道寬度方向上的氧化物半導體膜105的長度的變動，所以是較佳的。 Note that in this process, by forming the oxide semiconductor film 106 in such a way as to cover the top and side surfaces of the oxide semiconductor film 105, the formation of the oxide semiconductor film 105 is prevented from having the functions of source electrode and drain electrode The conductive film is etched during the process. As a result, the variation in the length of the oxide semiconductor film 105 in the channel width direction of the transistor can be reduced, which is preferable.

在此，藉由濺射法形成厚度為20nm的氧化物半導體膜。接著，藉由在該氧化物半導體膜上形成遮罩並選擇性地對氧化物半導體膜的一部分進行蝕刻，形成氧化物半導體膜106、108。作為氧化物半導體膜106、108，形成In：Ga：Zn=1：1：1.2的In-Ga-Zn氧化物膜。 Here, an oxide semiconductor film with a thickness of 20 nm is formed by a sputtering method. Next, by forming a mask on the oxide semiconductor film and selectively etching a part of the oxide semiconductor film, oxide semiconductor films 106 and 108 are formed. As the oxide semiconductor films 106 and 108, an In-Ga-Zn oxide film of In:Ga:Zn=1:1:1:2 is formed.

接著，進行加熱處理，使絕緣膜104所含的氧移動到氧化物半導體膜。注意，該加熱處理也可以在形成成為氧化物半導體膜106、108的氧化物半導體膜之後且在對該氧化物半導體膜進行蝕刻而形成氧化物半導體膜106、108之前進行。 Next, heat treatment is performed to move the oxygen contained in the insulating film 104 to the oxide semiconductor film. Note that this heat treatment may be performed after forming the oxide semiconductor films 106 and 108 and before etching the oxide semiconductor films to form the oxide semiconductor films 106 and 108.

另外，藉由在高於350℃且650℃以下，或450℃以上且600℃以下的溫度下進行加熱處理，能夠獲得後述的CAAC化率為60%以上且低於100%，或80%以上且低於100%，或90%以上且低於100%，或95%以上且98%以下的氧化物半導體膜。此外，能夠獲得氫、水等的含量得到降低的氧化物半導體膜。即，能夠形成雜質濃度 低且缺陷態密度低的氧化物半導體膜。 In addition, by performing heat treatment at a temperature higher than 350° C. and 650° C. or lower, or 450° C. or higher and 600° C. or lower, the CAAC conversion rate to be described later can be 60% or higher and lower than 100%, or 80% or higher The oxide semiconductor film is less than 100%, or more than 90% and less than 100%, or more than 95% and less than 98%. In addition, an oxide semiconductor film with a reduced content of hydrogen, water, etc. can be obtained. That is, an oxide semiconductor film with a low impurity concentration and a low defect state density can be formed.

接著，如圖4C所示，在絕緣膜104、多層膜107及氧化物半導體膜108上形成絕緣膜115。接著，在絕緣膜115上形成導電膜119、120。 Next, as shown in FIG. 4C, an insulating film 115 is formed on the insulating film 104, the multilayer film 107, and the oxide semiconductor film 108. Next, conductive films 119 and 120 are formed on the insulating film 115.

在作為導電膜119、120例如使用低電阻材料時，若低電阻材料混入氧化物半導體膜中，則會引起電晶體的電特性的劣化。在本實施方式中，藉由在形成導電膜119、120之前形成絕緣膜115，使氧化物半導體膜105、108的通道區域不接觸於導電膜119、120，因此能夠抑制電晶體的電特性的變動，典型的是臨界電壓的變動。 When a low-resistance material is used as the conductive films 119 and 120, for example, if the low-resistance material is mixed into the oxide semiconductor film, the electrical characteristics of the transistor will deteriorate. In this embodiment, by forming the insulating film 115 before forming the conductive films 119 and 120, the channel regions of the oxide semiconductor films 105 and 108 are not in contact with the conductive films 119 and 120, so the electrical characteristics of the transistor can be suppressed The variation is typically the variation of the threshold voltage.

作為絕緣膜115，可以藉由使用CVD法形成氧化矽膜或氧氮化矽膜。此時，作為源氣體，較佳為使用包含矽的沉積氣體及氧化性氣體。作為包含矽的沉積氣體的典型例子，有矽烷、乙矽烷、丙矽烷、氟化矽烷等。作為氧化性氣體，有氧、臭氧、一氧化二氮、二氧化氮等。 As the insulating film 115, a silicon oxide film or a silicon oxynitride film can be formed by using a CVD method. At this time, as the source gas, it is preferable to use a deposition gas containing silicon and an oxidizing gas. As typical examples of the deposition gas containing silicon, there are silane, disilane, propane silane, fluorinated silane, and the like. As the oxidizing gas, there are oxygen, ozone, nitrous oxide, nitrogen dioxide, and the like.

另外，作為絕緣膜115，可以在如下條件下利用CVD法形成缺陷量少的氧氮化矽膜：在相對於沉積氣體的氧化性氣體比例為大於20倍且小於100倍，或者為40倍以上且80倍以下；並且處理室內的壓力為低於100Pa，或50Pa以下。 In addition, as the insulating film 115, a silicon oxynitride film with a small amount of defects can be formed by the CVD method under the following conditions: the ratio of the oxidizing gas to the deposition gas is more than 20 times and less than 100 times, or more than 40 times And 80 times or less; and the pressure in the processing chamber is less than 100Pa, or 50Pa or less.

此外，作為絕緣膜115，可以利用如下條件形成緻密的氧化矽膜或氧氮化矽膜：將設置在電漿CVD設備的抽成真空的處理室內的基板保持在280℃以上且400℃以下的溫度，將源氣體引入處理室內而將處理室內的壓 力設定為20Pa以上且250Pa以下，更佳為100Pa以上且250Pa以下，並對設置在處理室內的電極供應高頻功率。 In addition, as the insulating film 115, a dense silicon oxide film or a silicon oxynitride film can be formed under the following conditions: the substrate provided in the evacuated processing chamber of the plasma CVD equipment is maintained at 280°C or more and 400°C or less Temperature, the source gas is introduced into the processing chamber, and the pressure in the processing chamber is set to 20 Pa or more and 250 Pa or less, more preferably 100 Pa or more and 250 Pa or less, and high-frequency power is supplied to the electrode provided in the processing chamber.

另外，可以藉由使用微波的電漿CVD法形成絕緣膜115。微波是指300MHz至300GHz的頻率範圍。微波的電子溫度低，並且其電子能量小。此外，在被供應的電力中，用於加速電子的比例少，能夠用於更多分子的離解及電離，並且能夠使密度高的電漿(高密度電漿)激發。因此，電漿對被形成面及沉積物造成的損傷少，由此能夠形成缺陷少的絕緣膜115。 In addition, the insulating film 115 can be formed by a plasma CVD method using microwaves. Microwave refers to the frequency range of 300MHz to 300GHz. The electron temperature of the microwave is low, and its electron energy is small. In addition, in the supplied electric power, the ratio for accelerating electrons is small, it can be used for dissociation and ionization of more molecules, and it is possible to excite a high-density plasma (high-density plasma). Therefore, the plasma causes less damage to the surface to be formed and the deposits, thereby making it possible to form the insulating film 115 with fewer defects.

另外，可以藉由使用有機矽烷氣體的CVD法形成絕緣膜115。作為有機矽烷氣體，可以使用四乙氧基矽烷(TEOS：化學式為Si(OC2H5)4)、四甲基矽烷(TMS：化學式為Si(CH3)4)、四甲基環四矽氧烷(TMCTS)、八甲基環四矽氧烷(OMCTS)、六甲基二矽氮烷(HMDS)、三乙氧基矽烷(SiH(OC2H5)3)、三(二甲胺基)矽烷(SiH(N(CH3)2)3)等含有矽的化合物。藉由利用使用有機矽烷氣體的CVD法，能夠形成覆蓋性高的絕緣膜115。 In addition, the insulating film 115 can be formed by a CVD method using an organic silane gas. As the organic silane gas, tetraethoxysilane (TEOS: chemical formula Si(OC 2 H 5 ) 4 ), tetramethylsilane (TMS: chemical formula Si(CH 3 ) 4 ), tetramethylcyclotetrasilicone can be used Oxyalkane (TMCTS), octamethylcyclotetrasiloxane (OMCTS), hexamethyldisilazane (HMDS), triethoxysilane (SiH(OC 2 H 5 ) 3 ), tris(dimethylamine Group) Silane (SiH(N(CH 3 ) 2 ) 3 ) and other silicon-containing compounds. By using the CVD method using an organic silane gas, an insulating film 115 with high coverage can be formed.

此外，當作為絕緣膜115形成氧化鎵膜時，可以藉由MOCVD法形成。 In addition, when the gallium oxide film is formed as the insulating film 115, it can be formed by the MOCVD method.

另外，在作為絕緣膜115藉由MOCVD法或ALD法等熱CVD法形成氧化鉿膜時，使用兩種氣體，即用作氧化劑的臭氧(O3)和藉由使包含溶劑和鉿前體化合物的液體(鉿醇鹽溶液，典型的是四二甲基醯胺鉿(TDMAH))氣化而獲得的源氣體。注意，四二甲基醯胺鉿的化學式為 Hf[N(CH3)2]4。另外，作為其它材料液，有四(乙基甲基醯胺)鉿等。 In addition, when the hafnium oxide film is formed as the insulating film 115 by a thermal CVD method such as MOCVD method or ALD method, two kinds of gases, namely ozone (O 3 ) used as an oxidizing agent and a compound containing a solvent and a hafnium precursor compound are used Gas (hafnium alkoxide solution, typically TDMAH) is obtained by gasification. Note that the chemical formula of hafnium tetradimethylamide is Hf[N(CH 3 ) 2 ] 4 . In addition, as other material liquids, there are tetra(ethylmethylamide) hafnium and the like.

另外，在作為絕緣膜115藉由MOCVD法或ALD法等熱CVD法形成氧化鋁膜時，使用兩種氣體，即用作氧化劑的H2O和藉由使包含溶劑和鋁前體化合物的液體(三甲基鋁(TMA)等)氣化而獲得的源氣體。注意，三甲基鋁的化學式為Al(CH3)3。另外，作為其它材料液，有三(二甲基醯胺)鋁、三異丁基鋁、鋁三(2,2,6,6-四甲基-3,5-庚二酮)等。，藉由利用ALD法能夠形成覆蓋性高且厚度薄的絕緣膜115。 In addition, when the aluminum oxide film is formed as the insulating film 115 by a thermal CVD method such as MOCVD method or ALD method, two kinds of gases, namely H 2 O used as an oxidizing agent and a liquid containing a solvent and an aluminum precursor compound are used (Trimethylaluminum (TMA) etc.) source gas obtained by gasification. Note that the chemical formula of trimethylaluminum is Al(CH 3 ) 3 . In addition, as other material liquids, there are tris(dimethylamide) aluminum, triisobutylaluminum, aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedione), and the like. By using the ALD method, the insulating film 115 with high coverage and thin thickness can be formed.

另外，在作為絕緣膜115藉由MOCVD法或ALD法等熱CVD法形成氧化矽膜時，使六氯乙矽烷(hexachlorodisilane)吸附於被形成面上，去除吸附物所包含的氯，供應氧化性氣體(O2或一氧化二氮)的自由基使其與吸附物起反應。 In addition, when the silicon oxide film is formed as the insulating film 115 by a thermal CVD method such as MOCVD method or ALD method, hexachlorodisilane is adsorbed on the surface to be formed, the chlorine contained in the adsorbate is removed to provide oxidizability The free radical of the gas (O 2 or nitrous oxide) makes it react with the adsorbate.

在此，作為絕緣膜115，藉由電漿CVD法形成100nm厚的氧氮化矽膜。 Here, as the insulating film 115, a 100-nm-thick silicon oxynitride film is formed by a plasma CVD method.

利用濺射法、真空蒸鍍法、脈衝雷射沉積(PLD)法、熱CVD法等形成導電膜，並在該導電膜上藉由光微影製程形成遮罩之後進行蝕刻處理，由此形成導電膜119、120。 A conductive film is formed by a sputtering method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, a thermal CVD method, etc., and a mask is formed on the conductive film by a photolithography process, and then an etching process is performed, thereby forming Conductive films 119, 120.

另外，可以藉由利用ALD的成膜裝置形成用作導電膜的鎢膜。在該情況下，依次反復引入WF6氣體及B2H6氣體來形成初期鎢膜，然後同時引入WF6氣體及H2 氣體形成鎢膜。另外，也可以使用SiH4氣體代替B2H6氣體。 In addition, a tungsten film used as a conductive film can be formed by a film forming apparatus using ALD. In this case, WF 6 gas and B 2 H 6 gas are sequentially introduced repeatedly to form an initial tungsten film, and then WF 6 gas and H 2 gas are simultaneously introduced to form a tungsten film. Alternatively, SiH 4 gas may be used instead of B 2 H 6 gas.

另外，在此，在導電膜上藉由光微影製程形成遮罩122、123之後，對該導電膜進行蝕刻，來形成導電膜119、120。 In addition, here, after the masks 122 and 123 are formed on the conductive film by the photolithography process, the conductive film is etched to form the conductive films 119 and 120.

此外，作為導電膜119、120的形成方法，也可以利用電鍍法、印刷法、噴墨法等來代替上述形成方法。 In addition, as a method of forming the conductive films 119 and 120, a plating method, a printing method, an inkjet method, or the like may be used instead of the above-described forming method.

接著，如圖5A所示，在殘留著遮罩122、123的情況下對絕緣膜115進行蝕刻，由此形成絕緣膜116、117。 Next, as shown in FIG. 5A, the insulating films 115 are etched with the masks 122 and 123 remaining, thereby forming the insulating films 116 and 117.

接著，如圖5B所示，在殘留著遮罩122、123的情況下對多層膜107及氧化物半導體膜108添加雜質元素125。其結果是，對多層膜107及氧化物半導體膜108中的沒有被遮罩122、123覆蓋的區域添加雜質元素。另外，藉由添加雜質元素125，在多層膜107及氧化物半導體膜108中形成氧缺陷。 Next, as shown in FIG. 5B, the impurity element 125 is added to the multilayer film 107 and the oxide semiconductor film 108 with the masks 122 and 123 remaining. As a result, impurity elements are added to the regions of the multilayer film 107 and the oxide semiconductor film 108 that are not covered by the masks 122 and 123. In addition, by adding the impurity element 125, oxygen defects are formed in the multilayer film 107 and the oxide semiconductor film 108.

此外，也可以在去除遮罩122、123之後，形成其厚度能夠對氧化物半導體膜添加雜質元素125的膜，典型的是氮化物絕緣膜、氧化物絕緣膜等，並且將雜質元素125添加到氧化物半導體膜。另外，能夠對氧化物半導體膜添加雜質元素125的膜厚度為0.1nm以上且50nm以下，或1nm以上且10nm以下。 In addition, after removing the masks 122 and 123, a film having a thickness capable of adding the impurity element 125 to the oxide semiconductor film, typically a nitride insulating film, an oxide insulating film, etc., and adding the impurity element 125 to Oxide semiconductor film. In addition, the film thickness of the impurity element 125 that can be added to the oxide semiconductor film is 0.1 nm or more and 50 nm or less, or 1 nm or more and 10 nm or less.

作為雜質元素125的添加方法，有離子摻雜 法、離子植入法、電漿處理法等。在採用電漿處理法的情況下，藉由在包含所添加的雜質元素的氣體氛圍下產生電漿，然後進行電漿處理，能夠添加雜質元素。作為產生上述電漿的裝置，可以使用乾蝕刻裝置、電漿CVD設備或高密度電漿CVD設備等。另外，在進行電漿處理的情況下，將基板設置到平行板電極的陰極一側，並以對基板101一側施加偏壓的方式供應RF電力即可。作為該RF電力，例如將電力密度設定為0.1W/cm2以上且2W/cm2以下即可。其結果是，能夠增加對多層膜107及氧化物半導體膜108添加的雜質元素的量，從而能夠在多層膜107及氧化物半導體膜108中形成更多的氧缺陷。 As a method of adding the impurity element 125, there are an ion doping method, an ion implantation method, a plasma treatment method, and the like. In the case of using the plasma treatment method, by generating plasma in a gas atmosphere containing the added impurity element and then performing plasma treatment, the impurity element can be added. As an apparatus for generating the above plasma, a dry etching apparatus, a plasma CVD apparatus, a high-density plasma CVD apparatus, or the like can be used. In addition, when plasma processing is performed, the substrate may be provided on the cathode side of the parallel plate electrode, and RF power may be supplied so as to bias the substrate 101 side. As the RF power, for example, the power density was set to 0.1W / cm 2 or more and 2W / cm 2 or less. As a result, the amount of impurity elements added to the multilayer film 107 and the oxide semiconductor film 108 can be increased, and more oxygen defects can be formed in the multilayer film 107 and the oxide semiconductor film 108.

另外，作為雜質元素125的源氣體，可以使用B2H6、PH3、CH4、N2、NH3、AlH3、AlCl3、SiH4、Si2H6、F2、HF、H2和稀有氣體中的一種以上。或者，也可以使用由稀有氣體稀釋的B2H6、PH3、N2、NH3、AlH3、AlCl3、F2、HF和H2中的一種以上。藉由使用由稀有氣體稀釋的B2H6、PH3、N2、NH3、AlH3、AlCl3、F2、HF和H2中的一種以上將雜質元素125添加到多層膜107及氧化物半導體膜108，可以將稀有氣體與氫、硼、碳、氮、氟、鋁、矽、磷及氯中的一種以上同時添加到多層膜107及氧化物半導體膜108。 In addition, as the source gas of the impurity element 125, B 2 H 6 , PH 3 , CH 4 , N 2 , NH 3 , AlH 3 , AlCl 3 , SiH 4 , Si 2 H 6 , F 2 , HF, H 2 can be used And more than one of the rare gases. Alternatively, one or more of B 2 H 6 , PH 3 , N 2 , NH 3 , AlH 3 , AlCl 3 , F 2 , HF, and H 2 diluted with a rare gas may be used. The impurity element 125 is added to the multilayer film 107 and oxidized by using one or more of B 2 H 6 , PH 3 , N 2 , NH 3 , AlH 3 , AlCl 3 , F 2 , HF, and H 2 diluted with rare gas For the semiconductor film 108, a rare gas and one or more of hydrogen, boron, carbon, nitrogen, fluorine, aluminum, silicon, phosphorus, and chlorine can be simultaneously added to the multilayer film 107 and the oxide semiconductor film 108.

或者，也可以在將稀有氣體添加到多層膜107及氧化物半導體膜108之後，將B2H6、PH3、CH4、N2、NH3、AlH3、AlCl3、SiH4、Si2H6、F2、HF和H2中的一種 以上添加到多層膜107及氧化物半導體膜108。 Alternatively, after adding a rare gas to the multilayer film 107 and the oxide semiconductor film 108, B 2 H 6 , PH 3 , CH 4 , N 2 , NH 3 , AlH 3 , AlCl 3 , SiH 4 , Si 2 One or more of H 6 , F 2 , HF, and H 2 are added to the multilayer film 107 and the oxide semiconductor film 108.

或者，也可以在將B2H6、PH3、CH4、N2、NH3、AlH3、AlCl3、SiH4、Si2H6、F2、HF及H2中的一種以上添加到多層膜107及氧化物半導體膜108之後，將稀有氣體添加到多層膜107及氧化物半導體膜108。 Alternatively, one or more of B 2 H 6 , PH 3 , CH 4 , N 2 , NH 3 , AlH 3 , AlCl 3 , SiH 4 , Si 2 H 6 , F 2 , HF, and H 2 may be added to After the multilayer film 107 and the oxide semiconductor film 108, a rare gas is added to the multilayer film 107 and the oxide semiconductor film 108.

雜質元素125的添加藉由適當地設定加速電壓或劑量等的注入條件來控制即可。例如，在藉由離子植入法添加氬時，將加速電壓設定為10kV，並將劑量設定為1×1013ions/cm2以上且1×1016ions/cm2以下即可，例如可以設定為1×1014ions/cm2。此外，在藉由離子植入法添加磷離子時，將加速電壓設定為30kV，並將劑量設定為1×1013ions/cm2以上且5×1016ions/cm2以下即可，例如可以設定為1×1015ions/cm2。 The addition of the impurity element 125 may be controlled by appropriately setting injection conditions such as acceleration voltage and dose. For example, when adding argon by ion implantation, the acceleration voltage is set to 10 kV, and the dose is set to 1×10 13 ions/cm 2 or more and 1×10 16 ions/cm 2 or less, for example, it can be set It is 1×10 14 ions/cm 2 . In addition, when adding phosphorus ions by ion implantation, the acceleration voltage is set to 30 kV, and the dose is set to 1×10 13 ions/cm 2 or more and 5×10 16 ions/cm 2 or less, for example, Set to 1×10 15 ions/cm 2 .

其結果是，可以在多層膜107中形成低電阻區域107b、107c。另外，可以在氧化物半導體膜108中形成低電阻區域108b、108c。之後，去除遮罩122、123。 As a result, low resistance regions 107b and 107c can be formed in the multilayer film 107. In addition, the low-resistance regions 108b and 108c may be formed in the oxide semiconductor film 108. After that, the masks 122 and 123 are removed.

另外，若在導電膜119、120露出的狀態下添加雜質元素125，導電膜119、120的一部分則會剝離而附著於絕緣膜116、117的側面。其結果是，導致電晶體的洩漏電流增大。因此，藉由在由遮罩122、123覆蓋導電膜119、120的狀態下對多層膜107及氧化物半導體膜108添加雜質元素125，能夠防止導電膜119、120的一部分附著於絕緣膜116、117的側面。 In addition, if the impurity element 125 is added with the conductive films 119 and 120 exposed, part of the conductive films 119 and 120 will peel off and adhere to the side surfaces of the insulating films 116 and 117. As a result, the leakage current of the transistor increases. Therefore, by adding the impurity element 125 to the multilayer film 107 and the oxide semiconductor film 108 in a state where the conductive films 119 and 120 are covered by the masks 122 and 123, it is possible to prevent a part of the conductive films 119 and 120 from adhering to the insulating film 116, 117 on the side.

然後，也可以進行加熱處理來進一步提高添加有雜質元素125的區域的導電性。典型的是，加熱處理的溫度為150℃以上且低於基板的應變點，或250℃以上且450℃以下，或300℃以上且450℃以下。 Then, heat treatment may be performed to further increase the conductivity of the region where the impurity element 125 is added. Typically, the temperature of the heat treatment is 150°C or higher and lower than the strain point of the substrate, or 250°C or higher and 450°C or lower, or 300°C or higher and 450°C or lower.

接著，如圖5C所示，在絕緣膜104、多層膜107、氧化物半導體膜108、絕緣膜116、117、導電膜119、120上形成絕緣膜126。 Next, as shown in FIG. 5C, an insulating film 126 is formed on the insulating film 104, the multilayer film 107, the oxide semiconductor film 108, the insulating films 116, 117, and the conductive films 119, 120.

作為絕緣膜126的形成方法，有濺射法、CVD法、真空蒸鍍法、脈衝雷射沉積(PLD)法等。另外，藉由使用將矽烷及氨、或者矽烷及氮用作源氣體的電漿CVD法，可以形成包含氫的氮化矽膜。此外，藉由利用電漿CVD法，能夠對多層膜107及氧化物半導體膜108造成損傷，從而能夠在多層膜107及氧化物半導體膜108中形成氧缺陷。 As a method of forming the insulating film 126, there are a sputtering method, a CVD method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, and the like. In addition, by using a plasma CVD method using silane and ammonia, or silane and nitrogen as source gases, a silicon nitride film containing hydrogen can be formed. In addition, by using the plasma CVD method, the multilayer film 107 and the oxide semiconductor film 108 can be damaged, and oxygen defects can be formed in the multilayer film 107 and the oxide semiconductor film 108.

由於在絕緣膜126中包含氫，因此藉由使多層膜107及氧化物半導體膜108中的添加有雜質元素的區域與絕緣膜126接觸，包含在絕緣膜126中的氫移動到多層膜107及氧化物半導體膜108中的添加有雜質元素的區域。因為在添加有雜質的區域中包含氧缺陷，所以可以在多層膜107及氧化物半導體膜108中形成低電阻區域。 Since the insulating film 126 contains hydrogen, by contacting the region where the impurity element is added to the multilayer film 107 and the oxide semiconductor film 108 and the insulating film 126, the hydrogen contained in the insulating film 126 moves to the multilayer film 107 and A region in the oxide semiconductor film 108 to which impurity elements are added. Since oxygen defects are included in the region where impurities are added, a low resistance region can be formed in the multilayer film 107 and the oxide semiconductor film 108.

或者，藉由在代替絕緣膜126形成鋁膜或氧化鋁膜之後進行加熱處理，使包含在多層膜107及氧化物半導體膜108中的氧與鋁膜或氧化鋁膜起反應，而作為絕緣膜126形成氧化鋁膜，並在多層膜107及氧化物半導體 膜108的低電阻區域107b、107c、108b、108c中形成氧缺陷。其結果是，能夠進一步提高低電阻區域107b、107c、108b、108c的導電性。 Alternatively, by forming an aluminum film or an aluminum oxide film instead of the insulating film 126 and then performing a heat treatment, the oxygen contained in the multilayer film 107 and the oxide semiconductor film 108 reacts with the aluminum film or the aluminum oxide film to serve as an insulating film 126 forms an aluminum oxide film, and forms oxygen defects in the low resistance regions 107b, 107c, 108b, and 108c of the multilayer film 107 and the oxide semiconductor film 108. As a result, the electrical conductivity of the low-resistance regions 107b, 107c, 108b, and 108c can be further improved.

在此，作為絕緣膜126藉由電漿CVD法形成100nm厚的氮化矽膜。 Here, as the insulating film 126, a 100-nm-thick silicon nitride film is formed by a plasma CVD method.

然後，也可以進行加熱處理來進一步提高低電阻區域107b、107c、108b、108c的導電性。典型的是，加熱處理的溫度為150℃以上且低於基板的應變點，或250℃以上且450℃以下，或300℃以上且450℃以下。 Then, heat treatment may be performed to further increase the electrical conductivity of the low-resistance regions 107b, 107c, 108b, and 108c. Typically, the temperature of the heat treatment is 150°C or higher and lower than the strain point of the substrate, or 250°C or higher and 450°C or lower, or 300°C or higher and 450°C or lower.

接著，如圖6A所示，也可以形成絕緣膜127。藉由形成絕緣膜127，能夠降低將在後面形成的導電膜134、135、136、137與導電膜119、120之間的寄生電容。 Next, as shown in FIG. 6A, an insulating film 127 may be formed. By forming the insulating film 127, the parasitic capacitance between the conductive films 134, 135, 136, 137 and the conductive films 119, 120 to be formed later can be reduced.

接著，在絕緣膜126、127中形成開口部128、129、130、131而使低電阻區域的一部分露出，然後形成導電膜134、135、136、137。此外，較佳為形成氮化物絕緣膜162(參照圖6B)。 Next, openings 128, 129, 130, 131 are formed in the insulating films 126, 127 to expose a part of the low resistance region, and then conductive films 134, 135, 136, 137 are formed. In addition, it is preferable to form a nitride insulating film 162 (see FIG. 6B).

導電膜134、135、136、137的形成方法可以適當地採用與導電膜119、120同樣的形成方法。氮化物絕緣膜162可以適當地使用濺射法、CVD法等形成。 The formation methods of the conductive films 134, 135, 136, and 137 can be appropriately the same as the formation methods of the conductive films 119, 120. The nitride insulating film 162 can be formed using a sputtering method, a CVD method, or the like as appropriate.

藉由上述製程，可以製造電晶體100g、100h。 Through the above process, 100g and 100h of transistors can be manufactured.

〈半導體裝置的製造方法2〉 <Manufacturing method 2 of semiconductor device>

接著，對圖8A和圖8B所示的電晶體100k、100z的製造方法進行說明。 Next, a method of manufacturing the transistors 100k and 100z shown in FIGS. 8A and 8B will be described.

在驅動電路部的基板101上形成氮化物絕緣膜161，並在氮化物絕緣膜161上形成導電膜102。可以適當地使用導電膜119、120的製造方法來形成導電膜102。 A nitride insulating film 161 is formed on the substrate 101 of the driving circuit section, and a conductive film 102 is formed on the nitride insulating film 161. The conductive film 102 can be appropriately formed using the manufacturing method of the conductive films 119 and 120.

接著，在氮化物絕緣膜161及導電膜102上層疊絕緣膜104a及絕緣膜104b來形成絕緣膜104。 Next, the insulating film 104 a and the insulating film 104 b are stacked on the nitride insulating film 161 and the conductive film 102 to form the insulating film 104.

然後，藉由圖4A及圖4B的製程形成多層膜107及氧化物半導體膜108。 Then, the multilayer film 107 and the oxide semiconductor film 108 are formed by the processes of FIGS. 4A and 4B.

接著，如圖4C所示，在形成絕緣膜115之後對絕緣膜115的一部分進行蝕刻，形成圖7A所示的開口部113。 Next, as shown in FIG. 4C, after forming the insulating film 115, a part of the insulating film 115 is etched to form the opening 113 shown in FIG. 7A.

接著，在形成圖4C所示的導電膜119、120之後，藉由與圖5A至圖5C及圖6A和圖6B同樣的製程可以製造電晶體100k、100z。 Next, after the conductive films 119 and 120 shown in FIG. 4C are formed, the transistors 100k and 100z can be manufactured by the same process as FIGS. 5A to 5C and FIGS. 6A and 6B.

在本實施方式所示的電晶體中，由於具有源極電極以及汲極電極的功能的導電膜不與具有閘極電極的功能的導電膜重疊，因此能夠降低寄生電容，所以通態電流較大。另外，在本實施方式所示的電晶體中，可以穩定地形成低電阻區域，所以與習知的電晶體相比，其通態電流得到提高，並且其電特性的偏差得到減少。 In the transistor shown in this embodiment, since the conductive film having the functions of the source electrode and the drain electrode does not overlap with the conductive film having the function of the gate electrode, the parasitic capacitance can be reduced, so the on-state current is large . In addition, in the transistor shown in this embodiment, the low-resistance region can be formed stably, so that the on-state current is improved and the variation in the electrical characteristics is reduced compared to the conventional transistor.

本實施方式所示的結構及方法等可以與其他實施方式所示的結構及方法等適當地組合而實施。 The structure and method shown in this embodiment can be implemented in appropriate combination with the structure and method shown in other embodiments.

實施方式2 Embodiment 2

在本實施方式中，參照圖11A至圖23對半導體裝置及半導體裝置的製造方法的一個方式進行說明。 In this embodiment, one embodiment of a semiconductor device and a method of manufacturing the semiconductor device will be described with reference to FIGS. 11A to 23.

〈半導體裝置的結構1〉 <Structure 1 of Semiconductor Device>

圖11A至圖13示出頂閘極結構的電晶體作為包括在半導體裝置中的電晶體的一個例子。在此，作為半導體裝置的一個例子，對顯示裝置進行說明。另外，說明分別設置在顯示裝置的驅動電路部及像素部的電晶體的結構。 11A to 13 show a transistor of a top gate structure as an example of a transistor included in a semiconductor device. Here, as an example of a semiconductor device, a display device will be described. In addition, the structure of the transistors respectively provided in the drive circuit portion and the pixel portion of the display device will be described.

圖11A至圖11C示出設置在驅動電路部的電晶體100s及設置在像素部的電晶體100t、100u的俯視圖，圖12及圖13示出電晶體100s及電晶體100t、100u的剖面圖。圖11A是電晶體100s的俯視圖，圖11B是電晶體100t的俯視圖，圖11C是電晶體100u的俯視圖。圖12是圖11A的點劃線A-B間的剖面圖、圖11B的點劃線C-D間的剖面圖及圖11C的點劃線E-F間的剖面圖。圖13是圖11A的點劃線G-H間的剖面圖、圖11B的點劃線I-J間的剖面圖及圖11C的點劃線K-L間的剖面圖。 FIGS. 11A to 11C show plan views of the transistor 100s provided in the drive circuit section and the transistors 100t and 100u provided in the pixel section, and FIGS. 12 and 13 show cross-sectional views of the transistor 100s and the transistors 100t and 100u. FIG. 11A is a plan view of the transistor 100s, FIG. 11B is a plan view of the transistor 100t, and FIG. 11C is a plan view of the transistor 100u. FIG. 12 is a cross-sectional view between the dashed-dotted line A-B of FIG. 11A, a cross-sectional view between the dashed-dotted line C-D of FIG. 11B, and a cross-sectional view between the dashed-dotted line E-F of FIG. 11C. 13 is a cross-sectional view taken along the dash-dot line G-H in FIG. 11A, a cross-sectional view taken along the dash-dot line I-J in FIG. 11B, and a cross-sectional view taken between the dash-dot line K-L in FIG. 11C.

圖12和圖13所示的電晶體100s包括：基板101上的絕緣膜104；絕緣膜104上的多層膜107；接觸於多層膜107的絕緣膜116；以及隔著絕緣膜116與多層膜107重疊的導電膜119。由於電晶體100s與實施方式1所示的電晶體100g的結構相同，因此詳細內容可以援用實施方式1的電晶體100g的說明。The transistor 100s shown in FIGS. 12 and 13 includes: an insulating film 104 on the substrate 101; a multilayer film 107 on the insulating film 104; an insulating film 116 in contact with the multilayer film 107; and the insulating film 116 and the multilayer film 107 Overlapping conductive film 119. Since the structure of the transistor 100s is the same as that of the transistor 100g shown in Embodiment 1, the description of the transistor 100g of Embodiment 1 can be used for details.

電晶體100t包括形成在基板101上的絕緣膜104上的氧化物半導體膜108；接觸於氧化物半導體膜108的絕緣膜117；以及隔著絕緣膜117與氧化物半導體膜108重疊的導電膜120。電晶體100t與實施方式1所示的電晶體100h的結構相同，所以詳細內容可以援用實施方式1的電晶體100h的說明。 The transistor 100t includes an oxide semiconductor film 108 formed on an insulating film 104 on a substrate 101; an insulating film 117 contacting the oxide semiconductor film 108; and a conductive film 120 overlapping the oxide semiconductor film 108 via the insulating film 117 . The structure of the transistor 100t is the same as that of the transistor 100h shown in the first embodiment, so the description of the transistor 100h of the first embodiment can be used for details.

電晶體100u包括形成在基板101上的絕緣膜104上的多層膜147；接觸於多層膜147的絕緣膜118；以及隔著絕緣膜118與多層膜147重疊的導電膜121。電晶體100u與電晶體100s的結構相同。 The transistor 100u includes a multilayer film 147 formed on the insulating film 104 on the substrate 101; an insulating film 118 contacting the multilayer film 147; and a conductive film 121 overlapping the multilayer film 147 via the insulating film 118. The structure of the transistor 100u is the same as that of the transistor 100s.

導電膜121具有閘極電極的功能。另外，絕緣膜118具有閘極絕緣膜的功能。 The conductive film 121 has the function of a gate electrode. In addition, the insulating film 118 has the function of a gate insulating film.

多層膜147包括：與導電膜121重疊的通道區域147a；以及夾著該通道區域147a的低電阻區域147b、147c。另外，通道區域147a具有接觸於絕緣膜104的通道區域145a以及接觸於通道區域145a的通道區域146a。低電阻區域147b包括接觸於絕緣膜104的低電阻區域145b以及接觸於低電阻區域145b的低電阻區域146b。低電阻區域147c包括接觸於絕緣膜104的低電阻區域145c以及接觸於低電阻區域145c的低電阻區域146c。注意，雖然在圖12中未圖示，但是將包括通道區域145a、低電阻區域145b以及低電阻區域145c的氧化物半導體膜稱為氧化物半導體膜145，並將包括通道區域146a、低電阻區域146b以及低電阻區域146c的氧化物半 導體膜稱為氧化物半導體膜146。即，在多層膜147中層疊有氧化物半導體膜145以及氧化物半導體膜146。 The multilayer film 147 includes: a channel region 147a overlapping the conductive film 121; and low resistance regions 147b and 147c sandwiching the channel region 147a. In addition, the channel region 147a has a channel region 145a contacting the insulating film 104 and a channel region 146a contacting the channel region 145a. The low resistance region 147b includes a low resistance region 145b contacting the insulating film 104 and a low resistance region 146b contacting the low resistance region 145b. The low resistance region 147c includes a low resistance region 145c contacting the insulating film 104 and a low resistance region 146c contacting the low resistance region 145c. Note that although not shown in FIG. 12, the oxide semiconductor film including the channel region 145a, the low resistance region 145b, and the low resistance region 145c is referred to as the oxide semiconductor film 145, and will include the channel region 146a, the low resistance region The oxide semiconductor films of 146b and the low resistance region 146c are called oxide semiconductor films 146. That is, the oxide semiconductor film 145 and the oxide semiconductor film 146 are stacked on the multilayer film 147.

此外，在俯視形狀上氧化物半導體膜146的端部位於氧化物半導體膜145的端部外側。換言之，氧化物半導體膜146覆蓋氧化物半導體膜145的頂面及側面。 In addition, the end portion of the oxide semiconductor film 146 is located outside the end portion of the oxide semiconductor film 145 in a plan view shape. In other words, the oxide semiconductor film 146 covers the top surface and side surfaces of the oxide semiconductor film 145.

另外，在電晶體100u中，設置有接觸於低電阻區域147b、147c的絕緣膜126。此外，也可以在絕緣膜126上設置有絕緣膜127。另外，在絕緣膜126及絕緣膜127的開口部132、133中設置有接觸於多層膜147的低電阻區域147b、147c的導電膜138、139。 In addition, in the transistor 100u, an insulating film 126 in contact with the low-resistance regions 147b and 147c is provided. In addition, an insulating film 127 may be provided on the insulating film 126. In addition, the openings 132 and 133 of the insulating film 126 and the insulating film 127 are provided with conductive films 138 and 139 that contact the low-resistance regions 147 b and 147 c of the multilayer film 147.

在多層膜147中，在不與導電膜121重疊的區域中具有形成氧缺陷的元素。作為形成氧缺陷的元素，可以使用實施方式1所示的雜質元素。 In the multilayer film 147, there is an element that forms an oxygen defect in a region that does not overlap with the conductive film 121. As an element that forms an oxygen defect, the impurity element described in Embodiment 1 can be used.

另外，絕緣膜126是包含氫的膜，典型的有氮化物絕緣膜。作為氮化物絕緣膜的例子，有氮化矽膜、氮化鋁膜等。藉由使絕緣膜126與多層膜147接觸，絕緣膜126所包含的氫擴散到多層膜147。其結果是，在多層膜147中的與絕緣膜126接觸的區域中，含有多量的氫。 In addition, the insulating film 126 is a film containing hydrogen, and a typical nitride insulating film is used. As examples of the nitride insulating film, there are a silicon nitride film, an aluminum nitride film, and the like. By bringing the insulating film 126 into contact with the multilayer film 147, the hydrogen contained in the insulating film 126 diffuses into the multilayer film 147. As a result, a large amount of hydrogen is contained in the region of the multilayer film 147 that is in contact with the insulating film 126.

當雜質元素被添加到氧化物半導體時，氧化物半導體中的金屬元素與氧的鍵合被切斷，而形成氧缺陷。當對因添加雜質元素而形成有氧缺陷的氧化物半導體添加氫時，氫進入氧缺陷位點(site)，在導帶附近形成施體能階，而氧化物半導體的導電率變高。其結果是，可以形成氧化物導電體。因此，氧化物導電體具有透光性。 When an impurity element is added to the oxide semiconductor, the bond between the metal element in the oxide semiconductor and oxygen is cut off, and oxygen defects are formed. When hydrogen is added to an oxide semiconductor formed with an oxygen defect due to the addition of an impurity element, hydrogen enters the oxygen defect site, a donor level is formed near the conduction band, and the conductivity of the oxide semiconductor becomes high. As a result, an oxide conductor can be formed. Therefore, the oxide conductor has translucency.

氧化物導電體是簡併半導體，可以推測其導帶邊緣能階與費米能階一致或大致一致。因此，氧化物導電體膜與具有源極電極及汲極電極的功能的導電膜之間的接觸為歐姆接觸，可以降低氧化物導電體膜與具有源極電極及汲極電極的功能的導電膜之間的接觸電阻。 The oxide conductor is a degenerate semiconductor, and it can be speculated that its conduction band edge energy level is the same or roughly the same as the Fermi energy level. Therefore, the contact between the oxide conductor film and the conductive film having the functions of the source electrode and the drain electrode is an ohmic contact, which can reduce the oxide conductor film and the conductive film having the functions of the source electrode and the drain electrode Contact resistance between.

換言之，低電阻區域147b、147c具有源極區域及汲極區域的功能。 In other words, the low-resistance regions 147b and 147c function as source regions and drain regions.

另外，當使用鎢、鈦、鋁、銅、鉬、鉻、鉭或這些元素的合金等容易與氧鍵合的導電材料形成導電膜138、139時，氧化物半導體膜所包含的氧與導電膜138、139所包含的導電材料鍵合，在多層膜147中形成氧缺陷。另外，有時形成導電膜138、139的導電材料的構成元素的一部分混入到多層膜147中。其結果是，與導電膜138、139接觸的低電阻區域147b、147c的導電性提高，並具有源極區域及汲極區域的功能。 In addition, when the conductive films 138 and 139 are formed using conductive materials such as tungsten, titanium, aluminum, copper, molybdenum, chromium, tantalum, or alloys of these elements that are easily bonded to oxygen, the oxygen contained in the oxide semiconductor film and the conductive film The conductive materials contained in 138 and 139 are bonded to form oxygen defects in the multilayer film 147. In addition, a part of the constituent elements of the conductive material forming the conductive films 138 and 139 may be mixed into the multilayer film 147. As a result, the conductivity of the low-resistance regions 147b and 147c in contact with the conductive films 138 and 139 is improved, and functions as the source region and the drain region.

當雜質元素為稀有氣體元素且使用濺射法形成多層膜147時，低電阻區域147b、147c分別包含稀有氣體元素，並且與通道區域147a相比，低電阻區域147b、147c的稀有氣體元素濃度較高。這是因為，由於當使用濺射法形成多層膜147時，作為濺射氣體使用稀有氣體，因此多層膜147包含稀有氣體，並且為了在低電阻區域147b、147c中形成氧缺陷，有意地添加稀有氣體。注意，在低電阻區域147b、147c中，也可以添加與通道區域147a不同的稀有氣體元素。 When the impurity element is a rare gas element and the multi-layer film 147 is formed using a sputtering method, the low-resistance regions 147b and 147c respectively contain rare gas elements, and compared with the channel region 147a, the low-resistance regions 147b and 147c have a relatively rare gas element concentration high. This is because, when the multilayer film 147 is formed using the sputtering method, a rare gas is used as the sputtering gas, so the multilayer film 147 contains a rare gas, and in order to form oxygen defects in the low resistance regions 147b, 147c, the rare gas is intentionally added gas. Note that in the low resistance regions 147b and 147c, a rare gas element different from the channel region 147a may be added.

另外，低電阻區域147b、147c因為與絕緣膜126接觸，所以與通道區域147a相比氫濃度較高。 In addition, since the low resistance regions 147b and 147c are in contact with the insulating film 126, the hydrogen concentration is higher than that of the channel region 147a.

在低電阻區域147b、147c中，可以使藉由二次離子質譜分析法得到的氫濃度為8×1019atoms/cm3以上、1×1020atoms/cm3以上或5×1020atoms/cm3以上。可以使通道區域147a的藉由二次離子質譜分析法得到的氫濃度為5×1019atoms/cm3以下、1×1019atoms/cm3以下、5×1018atoms/cm3以下、1×1018atoms/cm3以下、5×1017atoms/cm3以下或1×1016atoms/cm3以下。 In the low-resistance regions 147b and 147c, the hydrogen concentration obtained by secondary ion mass spectrometry can be 8×10 19 atoms/cm 3 or more, 1×10 20 atoms/cm 3 or more, or 5×10 20 atoms/ cm 3 or more. The channel region 147a may have a hydrogen concentration obtained by secondary ion mass spectrometry of 5×10 19 atoms/cm 3 or less, 1×10 19 atoms/cm 3 or less, 5×10 18 atoms/cm 3 or less, 1 ×10 18 atoms/cm 3 or less, 5×10 17 atoms/cm 3 or less, or 1×10 16 atoms/cm 3 or less.

與通道區域147a相比，低電阻區域147b、147c的氫濃度高且因稀有氣體元素的添加而產生的氧缺陷量較多。因此，導電性變高，並且具有源極區域及汲極區域的功能。典型的是，低電阻區域147b、147c的電阻率可以為1×10-3Ωcm以上且低於1×104Ωcm，或者1×10-3Ωcm以上且低於1×10-1Ωcm。 Compared with the channel region 147a, the low-resistance regions 147b and 147c have a higher hydrogen concentration and a larger amount of oxygen defects due to the addition of rare gas elements. Therefore, the conductivity becomes high, and functions as the source region and the drain region. Typically, the resistivity of the low resistance regions 147b, 147c may be 1×10 −3 Ωcm or more and less than 1×10 4 Ωcm, or 1×10 −3 Ωcm or more and less than 1×10 -1 Ωcm.

注意，在低電阻區域147b、147c中，當氫的量與氧缺陷的量相同或比氧缺陷的量少時，氫容易被氧缺陷俘獲，而不容易擴散到通道區域147a。其結果是，可以製造常關閉特性的電晶體。 Note that, in the low-resistance regions 147b and 147c, when the amount of hydrogen is the same as or less than the amount of oxygen defects, hydrogen is easily trapped by the oxygen defects, and is not easily diffused to the channel region 147a. As a result, transistors with normally-off characteristics can be manufactured.

另外，在低電阻區域147b、147c中，當氧缺陷的量比氫的量多時，藉由控制氫的量，可以控制低電阻區域147b、147c的載子密度。或者，在低電阻區域147b、147c中，當氫的量比氧缺陷的量多時，藉由控制氧缺陷的量，可以控制低電阻區域147b、147c的載子密 度。藉由將低電阻區域147b、147c的載子密度設定為5×1018個/cm3以上、1×1019個/cm3以上或1×1020個/cm3以上，可以製造通道區域與具有源極電極及汲極電極的功能的導電膜138、139之間的電阻小且通態電流大的電晶體。 In addition, in the low resistance regions 147b and 147c, when the amount of oxygen defects is greater than the amount of hydrogen, the carrier density of the low resistance regions 147b and 147c can be controlled by controlling the amount of hydrogen. Alternatively, in the low resistance regions 147b and 147c, when the amount of hydrogen is greater than the amount of oxygen defects, the carrier density of the low resistance regions 147b and 147c can be controlled by controlling the amount of oxygen defects. By setting the carrier density of the low-resistance regions 147b and 147c to 5×10 18 /cm 3 or more, 1×10 19 /cm 3 or more, or 1×10 20 /cm 3 or more, the channel region and A transistor having a small resistance and a large on-state current between the conductive films 138 and 139 having the functions of a source electrode and a drain electrode.

在本實施方式所示的電晶體100s、100t、100u中，由於在通道區域與具有源極電極及汲極電極的功能的導電膜134、135、136、137、138、139之間包括低電阻區域107b、107c、108b、108c、147b、147c，因此寄生電阻較小。 In the transistors 100s, 100t, and 100u shown in this embodiment, the low resistance is included between the channel region and the conductive films 134, 135, 136, 137, 138, and 139 having the functions of the source electrode and the drain electrode. In the regions 107b, 107c, 108b, 108c, 147b, and 147c, the parasitic resistance is small.

另外，在電晶體100s中，導電膜119不與導電膜134、135重疊。因此，能夠降低導電膜119與導電膜134、135之間的寄生電容。另外，在電晶體100t中，導電膜120不與導電膜136、137重疊。因此，能夠降低導電膜120與導電膜136、137之間的寄生電容。另外，在電晶體100u中，導電膜121不與導電膜138、139重疊。因此，能夠降低導電膜121與導電膜138、139之間的寄生電容。其結果是，當作為基板101使用大面積的基板時，能夠降低導電膜119、120、121、134、135、136、137、138、139中的信號延遲。 In addition, in the transistor 100s, the conductive film 119 does not overlap with the conductive films 134 and 135. Therefore, the parasitic capacitance between the conductive film 119 and the conductive films 134 and 135 can be reduced. In addition, in the transistor 100t, the conductive film 120 does not overlap with the conductive films 136 and 137. Therefore, the parasitic capacitance between the conductive film 120 and the conductive films 136 and 137 can be reduced. In addition, in the transistor 100u, the conductive film 121 does not overlap with the conductive films 138 and 139. Therefore, the parasitic capacitance between the conductive film 121 and the conductive films 138 and 139 can be reduced. As a result, when a large-area substrate is used as the substrate 101, the signal delay in the conductive films 119, 120, 121, 134, 135, 136, 137, 138, and 139 can be reduced.

因此，電晶體100s、100t、100u的通態電流大且場效移動率高。 Therefore, the on-state currents of the transistors 100s, 100t, and 100u are large and the field effect mobility is high.

另外，在電晶體100s中，以導電膜119為遮罩，對多層膜107添加雜質元素。此外，在電晶體100t 中，以導電膜120為遮罩，對氧化物半導體膜108添加雜質元素。在電晶體100u中，以導電膜121為遮罩，對多層膜147添加雜質元素。換言之，可以以自對準的方式形成低電阻區域。 In addition, in the transistor 100s, with the conductive film 119 as a mask, an impurity element is added to the multilayer film 107. In addition, in the transistor 100t, with the conductive film 120 as a mask, an impurity element is added to the oxide semiconductor film 108. In the transistor 100u, with the conductive film 121 as a mask, an impurity element is added to the multilayer film 147. In other words, the low resistance region can be formed in a self-aligned manner.

驅動電路部的電晶體100s的通態電流大且場效移動率高。因此，可以製造驅動電路部的佔有面積小的顯示裝置。 The on-state current of the transistor 100s of the driving circuit section is large and the field effect mobility is high. Therefore, a display device with a small occupied area of the drive circuit portion can be manufactured.

另外，藉由使用場效移動率較高的電晶體，可以在作為驅動電路部的一個例子的信號線驅動電路中形成解多工器電路。解多工器電路是將一個輸入信號分配到多個輸出中的任一個的電路，因此能夠減少用於輸入信號的輸入端子的數量。例如，一個像素包括紅色子像素、綠色子像素及藍色子像素，並且藉由對各像素設置解多工器電路，可以利用解多工器電路分配對各子像素輸入的輸入信號，因此能夠將輸入端子的數量減少到1/3。 In addition, by using a transistor with a high field-effect mobility, a demultiplexer circuit can be formed in the signal line drive circuit as an example of the drive circuit section. The demultiplexer circuit is a circuit that distributes one input signal to any one of a plurality of outputs, and therefore can reduce the number of input terminals for input signals. For example, a pixel includes a red subpixel, a green subpixel, and a blue subpixel, and by providing a demultiplexer circuit for each pixel, the demultiplexer circuit can be used to distribute the input signal input to each subpixel, so Reduce the number of input terminals to 1/3.

另外，藉由在像素部中設置通態電流較大的電晶體100t、100u，即使在大型顯示裝置或高清晰顯示裝置中佈線的數量增多，也能夠降低各佈線的信號延遲，而能夠抑制顯示的不均勻。另外，構成發光裝置的EL元件的亮度與流在控制EL元件的驅動的電晶體中的電流成比例。因此，作為驅動EL元件的電晶體，藉由使用通態電流大且場效移動率高的電晶體如電晶體100u，能夠提高EL元件的亮度。另外，由於電晶體100u的通態電流較大而可以縮小平面上的電晶體的佔有面積，因此在像素中， 電晶體的配置的彈性得到提高。其結果是，能夠製造高解析度的顯示裝置。 In addition, by providing transistors 100t and 100u with a large on-state current in the pixel portion, even if the number of wirings increases in a large display device or a high-definition display device, the signal delay of each wiring can be reduced, and display can be suppressed Unevenness. In addition, the brightness of the EL element constituting the light-emitting device is proportional to the current flowing in the transistor controlling the driving of the EL element. Therefore, as a transistor for driving the EL element, by using a transistor with a large on-state current and a high field-effect mobility, such as a transistor 100u, the brightness of the EL element can be improved. In addition, since the on-state current of the transistor 100u is large, the occupied area of the transistor on the plane can be reduced, so that the elasticity of the arrangement of the transistor in the pixel is improved. As a result, a high-resolution display device can be manufactured.

如上所述，藉由使用能夠進行高速工作的電晶體製造驅動電路部，並使用寄生電容及寄生電阻較少的電晶體製造像素部，可以製造高清晰且能夠進行倍速驅動的顯示裝置。 As described above, by manufacturing the drive circuit portion using transistors capable of high-speed operation and manufacturing the pixel portion using transistors having less parasitic capacitance and parasitic resistance, a high-definition display device capable of double-speed driving can be manufactured.

下面說明圖12所示的詳細結構。注意，在此，主要說明電晶體100s的詳細結構。 The detailed structure shown in FIG. 12 will be described below. Note that here, the detailed structure of the transistor 100s is mainly explained.

在電晶體100s中，多層膜107中的氧化物半導體膜105的組成與氧化物半導體膜106的組成不同。另外，在電晶體100u中，多層膜147中的氧化物半導體膜145的組成與氧化物半導體膜146的組成不同。另一方面，多層膜107中的氧化物半導體膜105的組成與多層膜147中的氧化物半導體膜145的組成相同。此外，多層膜107中的氧化物半導體膜106的組成、氧化物半導體膜108的組成及多層膜147中的氧化物半導體膜146的組成相同。也就是說，氧化物半導體膜105及氧化物半導體膜145被同時形成，並且，氧化物半導體膜106、氧化物半導體膜108及氧化物半導體膜146被同時形成。 In the transistor 100s, the composition of the oxide semiconductor film 105 in the multilayer film 107 is different from the composition of the oxide semiconductor film 106. In addition, in the transistor 100 u, the composition of the oxide semiconductor film 145 in the multilayer film 147 is different from the composition of the oxide semiconductor film 146. On the other hand, the composition of the oxide semiconductor film 105 in the multilayer film 107 is the same as the composition of the oxide semiconductor film 145 in the multilayer film 147. In addition, the composition of the oxide semiconductor film 106 in the multilayer film 107, the composition of the oxide semiconductor film 108, and the composition of the oxide semiconductor film 146 in the multilayer film 147 are the same. That is, the oxide semiconductor film 105 and the oxide semiconductor film 145 are simultaneously formed, and the oxide semiconductor film 106, the oxide semiconductor film 108, and the oxide semiconductor film 146 are simultaneously formed.

在電晶體100u中，氧化物半導體膜145中形成有通道。因此，氧化物半導體膜145比氧化物半導體膜146厚。 In the transistor 100u, a channel is formed in the oxide semiconductor film 145. Therefore, the oxide semiconductor film 145 is thicker than the oxide semiconductor film 146.

可以在氧化物半導體膜105的厚度的範圍內使氧化物半導體膜145的厚度為所希望的厚度。 The thickness of the oxide semiconductor film 145 can be set to a desired thickness within the range of the thickness of the oxide semiconductor film 105.

作為氧化物半導體膜145、146，可以適當地使用氧化物半導體膜105、106、108所示的材料。藉由使氧化物半導體膜145的銦的含有量比氧化物半導體膜146多，可以在電晶體100u中形成埋入通道。因此，能夠降低電晶體100u的臨界電壓的變動，並降低通道電阻。 As the oxide semiconductor films 145 and 146, materials shown in the oxide semiconductor films 105, 106, and 108 can be suitably used. By making the oxide semiconductor film 145 contain more indium than the oxide semiconductor film 146, a buried channel can be formed in the transistor 100u. Therefore, it is possible to reduce the variation of the threshold voltage of the transistor 100u and to reduce the channel resistance.

明確而言，氧化物半導體膜145可以適當地使用氧化物半導體膜105所示的材料。 Specifically, for the oxide semiconductor film 145, the material shown in the oxide semiconductor film 105 can be appropriately used.

另外，明確而言，氧化物半導體膜146可以適當地使用氧化物半導體膜106、108所示的材料。 In addition, specifically, for the oxide semiconductor film 146, the materials shown in the oxide semiconductor films 106 and 108 can be appropriately used.

在電晶體100u中，由於通道形成在在In的原子個數比大於M(M為Mg、Al、Ti、Ga、Y、Zr、La、Ce、Nd或Hf)的氧化物半導體膜145中，因此場效移動率較高。典型的是場效移動率為大於10cm2/Vs且小於60cm2/Vs，較佳為15cm2/Vs以上且小於50cm2/Vs的電晶體。然而，當被照射光時，關態電流會增大。因此，藉由以與電晶體100u重疊的方式設置遮光膜，實現場效移動率高且關態電流低的電晶體。其結果是，可以製造能夠進行高速工作的電晶體。 In the transistor 100u, since the channel is formed in the oxide semiconductor film 145 in which the atomic number ratio in In is greater than M (M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf), Therefore, the field effect movement rate is higher. Typically, the field-effect mobility is greater than 10 cm 2 /Vs and less than 60 cm 2 /Vs, preferably 15 cm 2 /Vs or more and less than 50 cm 2 /Vs transistors. However, when irradiated with light, the off-state current will increase. Therefore, by providing a light-shielding film so as to overlap with the transistor 100u, a transistor with a high field effect mobility and a low off-state current is realized. As a result, a transistor capable of high-speed operation can be manufactured.

另外，在多層膜147中，較佳為降低第14族的元素之一的矽或碳、鹼金屬或鹼土金屬、氮、雜質元素等的濃度。典型的是，藉由使其濃度為與多層膜107所包含的第14族的元素之一的矽或碳、鹼金屬或鹼土金屬、氮、雜質元素等同樣的濃度，電晶體100u具有正臨界電壓的電特性(也稱為常關閉特性)。 In addition, in the multilayer film 147, it is preferable to reduce the concentration of silicon or carbon, an alkali metal or alkaline earth metal, nitrogen, an impurity element, or the like, which is one of the elements of the group 14. Typically, by setting the concentration to the same concentration as silicon or carbon, alkali metal or alkaline earth metal, nitrogen, impurity element, etc., which is one of the Group 14 elements included in the multilayer film 107, the transistor 100u has a positive criticality Electrical characteristics of voltage (also called normally-off characteristics).

在多層膜147中，尤其在通道區域147a中，藉由與通道區域107a同樣地降低雜質元素，能夠降低氧化物半導體膜的載子密度。 In the multilayer film 147, especially in the channel region 147a, by reducing the impurity element in the same manner as the channel region 107a, the carrier density of the oxide semiconductor film can be reduced.

作為多層膜147，藉由使用雜質濃度低且缺陷態密度低的氧化物半導體膜，可以製造具有更優異的電特性的電晶體。在此，將雜質濃度低且缺陷態密度低(氧缺陷少)的狀態稱為高純度本質或實質上高純度本質。高純度本質或實質上高純度本質的氧化物半導體具有較少的載子發生源，因此有時可以降低其載子密度。由此，通道區域形成在該氧化物半導體膜中的電晶體容易具有正臨界電壓的電特性(也稱為常關閉特性)。此外，高純度本質或實質上高純度本質的氧化物半導體膜具有較低的缺陷態密度，所以有時其陷阱態密度也變低。此外，高純度本質或實質上高純度本質的氧化物半導體膜的關態電流顯著小，在源極電極與汲極電極間的電壓(汲極電壓)在1V至10V的範圍內時，關態電流可以為半導體參數分析儀的測量極限以下，即1×10-13A以下。因此，有時通道區域形成在該氧化物半導體膜中的電晶體的電特性變動小，而該電晶體具有高可靠性。 As the multilayer film 147, by using an oxide semiconductor film having a low impurity concentration and a low defect state density, a transistor having more excellent electrical characteristics can be manufactured. Here, a state where the impurity concentration is low and the density of defect states is low (less oxygen defects) is referred to as a high purity essence or a substantially high purity essence. An oxide semiconductor having a high-purity essence or a substantially high-purity essence has fewer sources of carrier generation, and therefore may sometimes reduce its carrier density. Thus, the transistor in which the channel region is formed in the oxide semiconductor film is likely to have electrical characteristics of positive threshold voltage (also referred to as normally-off characteristics). In addition, the oxide semiconductor film of high purity essence or substantially high purity essence has a lower density of defect states, so the density of trap states sometimes becomes lower. In addition, the off-state current of the oxide semiconductor film of high purity or substantially high purity essence is significantly small, and the off state when the voltage between the source electrode and the drain electrode (drain voltage) is in the range of 1V to 10V The current may be below the measurement limit of the semiconductor parameter analyzer, that is, below 1×10 -13 A. Therefore, in some cases, the transistor in which the channel region is formed in the oxide semiconductor film has little variation in electrical characteristics, and the transistor has high reliability.

另外，在氧化物半導體膜145、146中，可以適當地使用氧化物半導體膜105、106、108的說明所示的結晶結構。 In addition, for the oxide semiconductor films 145 and 146, the crystal structures shown in the description of the oxide semiconductor films 105, 106, and 108 can be used as appropriate.

注意，在多層膜147中，有時通道區域147a與低電阻區域147b、147c的結晶性不同。這是因為，當 低電阻區域147b、147c被添加雜質元素時，低電阻區域147b、147c中產生損傷，而結晶性下降。 Note that in the multilayer film 147, the crystallinity of the channel region 147a and the low resistance regions 147b and 147c may be different. This is because, when an impurity element is added to the low-resistance regions 147b and 147c, damage occurs in the low-resistance regions 147b and 147c, and the crystallinity decreases.

〈半導體裝置的結構2〉 <Structure 2 of Semiconductor Device>

接著，使用圖14及圖15說明半導體裝置的其他結構。在此，在形成於驅動電路部的電晶體100v及形成在像素部的電晶體100w、100x中，具有閘極電極的功能的導電膜119、120、121為疊層結構。注意，圖14示出通道長度方向的電晶體100v、100w、100x的剖面圖，圖15示出通道寬度方向的電晶體100v、100w、100x的剖面圖。電晶體100v與實施方式1所示的電晶體100i的結構相同，所以詳細內容可以援用實施方式1的電晶體100i的說明。電晶體100w與實施方式1所示的電晶體100j的結構相同，所以詳細內容可以援用實施方式1的電晶體100j的說明。電晶體100x與本實施方式所示的電晶體100v的結構相同。 Next, another structure of the semiconductor device will be described using FIGS. 14 and 15. Here, in the transistor 100v formed in the driving circuit portion and the transistors 100w, 100x formed in the pixel portion, the conductive films 119, 120, and 121 having a gate electrode function have a laminated structure. Note that FIG. 14 shows a cross-sectional view of the transistors 100v, 100w, and 100x in the channel length direction, and FIG. 15 shows a cross-sectional view of the transistors 100v, 100w, and 100x in the channel width direction. The structure of the transistor 100v is the same as that of the transistor 100i shown in the first embodiment. Therefore, the description of the transistor 100i of the first embodiment can be used for details. The structure of the transistor 100w is the same as that of the transistor 100j shown in the first embodiment, so the details can be referred to the description of the transistor 100j of the first embodiment. The transistor 100x has the same structure as the transistor 100v shown in this embodiment.

電晶體100x中的導電膜121包括接觸於絕緣膜118的導電膜121a及接觸於導電膜121a的導電膜121b。另外，導電膜121a的端部位於導電膜121b的端部的外側。換言之，導電膜121a具有其端部比導電膜121b的端部突出的形狀。 The conductive film 121 in the transistor 100x includes a conductive film 121a contacting the insulating film 118 and a conductive film 121b contacting the conductive film 121a. In addition, the end of the conductive film 121a is located outside the end of the conductive film 121b. In other words, the conductive film 121a has a shape whose end protrudes from the end of the conductive film 121b.

另外，絕緣膜118的端部位於導電膜121a的端部的外側。換言之，絕緣膜118具有其端部比導電膜121a的端部突出的形狀。再者，絕緣膜118的側面也可 以是彎曲的。 In addition, the end of the insulating film 118 is located outside the end of the conductive film 121a. In other words, the insulating film 118 has a shape whose end protrudes from the end of the conductive film 121a. Furthermore, the side surface of the insulating film 118 may be curved.

作為導電膜121a，可以適當地使用導電膜119a、120a的材料。作為導電膜121b，可以適當地使用導電膜119b、120b的材料。 As the conductive film 121a, materials of the conductive films 119a and 120a can be appropriately used. As the conductive film 121b, materials of the conductive films 119b and 120b can be appropriately used.

注意，藉由使多層膜147中的通道區域的銅的濃度為多層膜107所示的範圍的濃度，能夠製造次臨界擺幅值(S值)良好的電晶體。 Note that by making the concentration of copper in the channel region in the multilayer film 147 within the range shown in the multilayer film 107, a transistor with a subcritical swing value (S value) can be manufactured.

另外，電晶體100x與電晶體100v、100w同樣，藉由包括圖14及圖15所示的形狀的導電膜121及絕緣膜118，能夠使電晶體的汲極區域的電場弛豫。因此，能夠降低起因於汲極區域的電場的電晶體的臨界電壓的變動等劣化。 In addition, the transistor 100x, like the transistors 100v and 100w, can include the conductive film 121 and the insulating film 118 in the shapes shown in FIGS. 14 and 15 to relax the electric field in the drain region of the transistor. Therefore, it is possible to reduce the deterioration of the critical voltage of the transistor caused by the electric field in the drain region and the like.

〈半導體裝置的結構3〉 <Structure 3 of Semiconductor Device>

接著，使用圖16及圖17說明半導體裝置的其他結構。在此，形成在驅動電路部的電晶體111a、111d以及形成在像素部的電晶體111b、111c、111e、111f包括多層膜。注意，圖16示出通道長度方向的電晶體111a、111b、111c的剖面圖，圖17示出通道長度方向的電晶體111d、111e、111f的剖面圖。 Next, another structure of the semiconductor device will be described using FIGS. 16 and 17. Here, the transistors 111a, 111d formed in the drive circuit portion and the transistors 111b, 111c, 111e, 111f formed in the pixel portion include a multilayer film. Note that FIG. 16 shows a cross-sectional view of the transistors 111a, 111b, and 111c in the channel length direction, and FIG. 17 shows a cross-sectional view of the transistors 111d, 111e, and 111f in the channel length direction.

電晶體111a與實施方式1所示的電晶體111w的結構相同，所以詳細內容可以援用實施方式1的電晶體111w的說明。電晶體111b與實施方式1所示的電晶體100h的結構相同，所以詳細內容可以援用實施方式 1的電晶體100h的說明。電晶體111c與本實施方式所示的電晶體111a的結構相同，所以詳細內容可以援用實施方式1所示的電晶體111w的說明。電晶體111d與實施方式1所示的電晶體111x的結構相同，所以詳細內容可以援用實施方式1的電晶體111x的說明。電晶體111e與實施方式1所示的電晶體111y的結構相同，所以詳細內容可以援用實施方式1的電晶體111y的說明。電晶體111f與本實施方式所示的電晶體111d的結構相同，所以詳細內容可以援用實施方式1所示的電晶體111x的說明。 The transistor 111a has the same structure as the transistor 111w shown in the first embodiment, so the description of the transistor 111w of the first embodiment can be used for details. The transistor 111b has the same structure as the transistor 100h shown in the first embodiment, so the description of the transistor 100h of the first embodiment can be used for details. The structure of the transistor 111c is the same as that of the transistor 111a shown in this embodiment. Therefore, the description of the transistor 111w shown in Embodiment 1 can be used for details. The structure of the transistor 111d is the same as that of the transistor 111x shown in the first embodiment, so the description of the transistor 111x of the first embodiment can be used for details. The transistor 111e has the same structure as the transistor 111y shown in the first embodiment, so the description of the transistor 111y of the first embodiment can be referred to for details. The transistor 111f has the same structure as the transistor 111d shown in this embodiment, so the details can be referred to the description of the transistor 111x shown in Embodiment 1.

圖16所示的電晶體111c中的多層膜147包括通道區域147a及低電阻區域147b、147c。另外，通道區域147a包括：接觸於絕緣膜104的通道區域148a；接觸於通道區域148a的通道區域145a；以及接觸於通道區域145a的通道區域146a。低電阻區域147b包括：接觸於絕緣膜104的低電阻區域148b；接觸於低電阻區域148b的低電阻區域145b；以及接觸於低電阻區域145b的低電阻區域146b。低電阻區域147c包括：接觸於絕緣膜104的低電阻區域148c；接觸於低電阻區域148c的低電阻區域145c；以及接觸於低電阻區域145c的低電阻區域146c。注意，雖然在圖16中未圖示，但是將包括通道區域148a、低電阻區域148b及低電阻區域148c的氧化物半導體膜稱為氧化物半導體膜148。也就是說，作為多層膜147，依次層疊有氧化物半導體膜148、氧化物半導體膜145、氧化物半導體膜146。 The multilayer film 147 in the transistor 111c shown in FIG. 16 includes a channel region 147a and low resistance regions 147b and 147c. In addition, the channel region 147a includes: a channel region 148a contacting the insulating film 104; a channel region 145a contacting the channel region 148a; and a channel region 146a contacting the channel region 145a. The low resistance region 147b includes: a low resistance region 148b contacting the insulating film 104; a low resistance region 145b contacting the low resistance region 148b; and a low resistance region 146b contacting the low resistance region 145b. The low resistance region 147c includes: a low resistance region 148c contacting the insulating film 104; a low resistance region 145c contacting the low resistance region 148c; and a low resistance region 146c contacting the low resistance region 145c. Note that although not shown in FIG. 16, the oxide semiconductor film including the channel region 148a, the low resistance region 148b, and the low resistance region 148c is referred to as the oxide semiconductor film 148. That is, as the multilayer film 147, the oxide semiconductor film 148, the oxide semiconductor film 145, and the oxide semiconductor film 146 are sequentially stacked.

圖17所示的電晶體111f中的多層膜147包括通道區域147a及低電阻區域147b、147c。另外，通道區域147a包括：接觸於絕緣膜104的通道區域148a；接觸於通道區域148a的通道區域145a；接觸於通道區域145a的通道區域146a；以及接觸於通道區域146a的通道區域149a。低電阻區域147b包括：接觸於絕緣膜104的低電阻區域148b；接觸於低電阻區域148b的低電阻區域145b；接觸於低電阻區域145b的低電阻區域146b；以及接觸於低電阻區域146b的低電阻區域149b。低電阻區域147c包括：接觸於絕緣膜104的低電阻區域148c；接觸於低電阻區域148c的低電阻區域145c；接觸於低電阻區域145c的低電阻區域146c；以及接觸於低電阻區域146c的低電阻區域149c。注意，雖然在圖17中未圖示，但是將包括通道區域149a、低電阻區域149b及低電阻區域149c的氧化物半導體膜稱為氧化物半導體膜149。也就是說，作為多層膜147，依次層疊有氧化物半導體膜148、氧化物半導體膜145、氧化物半導體膜146及氧化物半導體膜149。 The multilayer film 147 in the transistor 111f shown in FIG. 17 includes a channel region 147a and low resistance regions 147b and 147c. In addition, the channel region 147a includes: a channel region 148a contacting the insulating film 104; a channel region 145a contacting the channel region 148a; a channel region 146a contacting the channel region 145a; and a channel region 149a contacting the channel region 146a. The low resistance region 147b includes: a low resistance region 148b contacting the insulating film 104; a low resistance region 145b contacting the low resistance region 148b; a low resistance region 146b contacting the low resistance region 145b; and a low resistance region 146b contacting the low resistance region 146b Resistance area 149b. The low resistance region 147c includes: a low resistance region 148c contacting the insulating film 104; a low resistance region 145c contacting the low resistance region 148c; a low resistance region 146c contacting the low resistance region 145c; and a low resistance region 146c contacting the low resistance region Resistance area 149c. Note that although not shown in FIG. 17, the oxide semiconductor film including the channel region 149a, the low resistance region 149b, and the low resistance region 149c is referred to as an oxide semiconductor film 149. That is, as the multilayer film 147, the oxide semiconductor film 148, the oxide semiconductor film 145, the oxide semiconductor film 146, and the oxide semiconductor film 149 are sequentially stacked.

氧化物半導體膜148、149較佳為與氧化物半導體膜145、146相比能隙大、電子親和力小、且絕緣性高。另外，氧化物半導體膜148、149較佳為與氧化物半導體膜145、146相比銦的含有量少。另外，氧化物半導體膜148、149較佳為具有遮蔽來自外部的雜質的功能。在這種氧化物半導體膜中，In的原子個數比小於M(M為 Mg、Al、Ti、Ga、Y、Zr、La、Ce、Nd或Hf)的原子個數比。當氧化物半導體膜148、149包含In-M-Zn氧化物(M為Mg、Al、Ti、Ga、Y、Zr、La、Ce、Nd或Hf)時，在用來形成氧化物半導體膜148、149的靶材的金屬元素的原子個數比為In：M：Zn=x3：y3：z3的情況下，x3/y3較佳為1/6以上且小於1。另外，z3/y3較佳為1/3以上且6以下，更佳為1以上且6以下。藉由將z3/y3設定為1以上且6以下，作為氧化物半導體膜148、149的CAAC-OS膜的形成變得容易。作為靶材的金屬元素的原子個數比的代表例子，有In：M：Zn=1：3：2、In：M：Zn=1：3：4、In：M：Zn=1：3：6、In：M：Zn=1：3：8、In：M：Zn=1：4：4、In：M：Zn=1：4：5、In：M：Zn=1：4：6、In：M：Zn=1：4：7、In：M：Zn=1：4：8、In：M：Zn=1：5：5、In：M：Zn=1：5：6、In：M：Zn=1：5：7、In：M：Zn=1：5：8、In：M：Zn=1：6：8等。 The oxide semiconductor films 148 and 149 preferably have a larger energy gap, a smaller electron affinity, and higher insulation than the oxide semiconductor films 145 and 146. In addition, the oxide semiconductor films 148 and 149 preferably have a smaller indium content than the oxide semiconductor films 145 and 146. In addition, the oxide semiconductor films 148 and 149 preferably have a function of shielding impurities from the outside. In such an oxide semiconductor film, the atomic number ratio of In is smaller than that of M (M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf). When the oxide semiconductor films 148 and 149 contain In-M-Zn oxide (M is Mg, Al, Ti, Ga, Y, Zr, La, Ce, Nd or Hf), they are used to form the oxide semiconductor film 148 In the case where the atomic number ratio of the metal element of the target of 149 is In:M:Zn=x 3 :y 3 :z 3 , x 3 /y 3 is preferably 1/6 or more and less than 1. In addition, z 3 /y 3 is preferably 1/3 or more and 6 or less, and more preferably 1 or more and 6 or less. By setting z 3 /y 3 to 1 or more and 6 or less, the formation of the CAAC-OS film as the oxide semiconductor films 148 and 149 becomes easy. Representative examples of the atomic number ratio of the metal elements of the target include In:M:Zn=1:3:2, In:M:Zn=1:3:4, In:M:Zn=1:3: 6. In: M: Zn=1: 3:8, In: M: Zn=1: 4: 4, In: M: Zn=1: 4: 5, In: M: Zn=1: 4: 6, In: M: Zn=1: 4: 7, In: M: Zn=1: 4: 8, In: M: Zn=1: 5: 5, In: M: Zn=1: 5: 6, In: M:Zn=1:5:7, In:M:Zn=1:5:8, In:M:Zn=1:6:8 and so on.

在圖16所示的電晶體111a中，氧化物半導體膜142與氧化物半導體膜105相比能隙大且電子親和力小，因此通道形成在氧化物半導體膜105中。即，成為埋入通道結構。另外，由於電晶體111a包括包含一種以上的構成氧化物半導體膜105的金屬元素的氧化物半導體膜106及氧化物半導體膜142，因此不容易在氧化物半導體膜105與氧化物半導體膜106的介面及氧化物半導體膜105與氧化物半導體膜142的介面形成介面能階。因此，藉由設置氧化物半導體膜106及氧化物半導體膜142，可 以降低電晶體的臨界電壓等的電特性的偏差或變動。此外，在電晶體111c中也具有同樣的效果。 In the transistor 111 a shown in FIG. 16, the oxide semiconductor film 142 has a larger energy gap and a smaller electron affinity than the oxide semiconductor film 105, so the channel is formed in the oxide semiconductor film 105. That is, it becomes a buried channel structure. In addition, since the transistor 111a includes the oxide semiconductor film 106 and the oxide semiconductor film 142 including more than one metal element constituting the oxide semiconductor film 105, it is not easy to interface between the oxide semiconductor film 105 and the oxide semiconductor film 106 The interface between the oxide semiconductor film 105 and the oxide semiconductor film 142 forms an interface level. Therefore, by providing the oxide semiconductor film 106 and the oxide semiconductor film 142, it is possible to reduce the variation or variation in the electrical characteristics such as the critical voltage of the transistor. In addition, the transistor 111c has the same effect.

另外，同樣地，在圖17所示的電晶體111d中，氧化物半導體膜142、143與氧化物半導體膜105、106相比能隙大且電子親和力小，因此通道形成在氧化物半導體膜105中。即，成為埋入通道結構。另外，藉由形成包括氧化物半導體膜142、143的多層膜107，氧化物半導體膜142與氧化物半導體膜105的介面、氧化物半導體膜105與氧化物半導體膜106的介面及氧化物半導體膜106與氧化物半導體膜143的介面不容易形成介面能階。其結果是，可以降低電晶體的臨界電壓等的電特性的偏差或變動。此外，在電晶體111f中也具有同樣的效果。 Also, in the transistor 111d shown in FIG. 17, the oxide semiconductor films 142 and 143 have a larger energy gap and a smaller electron affinity than the oxide semiconductor films 105 and 106, so channels are formed in the oxide semiconductor film 105 in. That is, it becomes a buried channel structure. In addition, by forming the multilayer film 107 including the oxide semiconductor films 142 and 143, the interface between the oxide semiconductor film 142 and the oxide semiconductor film 105, the interface between the oxide semiconductor film 105 and the oxide semiconductor film 106, and the oxide semiconductor film The interface between 106 and the oxide semiconductor film 143 is not easy to form an interface level. As a result, it is possible to reduce variations or fluctuations in the electrical characteristics such as the critical voltage of the transistor. In addition, the transistor 111f has the same effect.

另外，同樣地，在圖17所示的電晶體111e中，藉由形成包括氧化物半導體膜144的多層膜110，氧化物半導體膜144與氧化物半導體膜108的介面不容易形成介面能階。其結果是，可以降低電晶體的臨界電壓等的電特性的偏差或變動。 Also, in the transistor 111e shown in FIG. 17, by forming the multilayer film 110 including the oxide semiconductor film 144, the interface between the oxide semiconductor film 144 and the oxide semiconductor film 108 cannot easily form an interface level. As a result, it is possible to reduce variations or fluctuations in the electrical characteristics such as the critical voltage of the transistor.

〈半導體裝置的結構4〉 <Structure 4 of Semiconductor Device>

接著，使用圖18A至圖20說明半導體裝置的其他結構。在此，形成在驅動電路部的電晶體111g及形成在像素部的電晶體111i為雙閘極結構的電晶體。圖18A為電晶體111g的俯視圖，圖18B為電晶體111h的俯視圖，圖18C為電晶體111i的俯視圖。圖19是圖18A的點劃線A- B間的剖面圖、圖18B的點劃線C-D間的剖面圖以及圖18C的點劃線E-F間的剖面圖。圖20是圖18A的點劃線G-H間的剖面圖、圖18B的點劃線I-J間的剖面圖以及圖18C的點劃線K-L間的剖面圖。 Next, another structure of the semiconductor device will be described using FIGS. 18A to 20. Here, the transistor 111g formed in the drive circuit portion and the transistor 111i formed in the pixel portion are transistors of a double gate structure. 18A is a plan view of the transistor 111g, FIG. 18B is a plan view of the transistor 111h, and FIG. 18C is a plan view of the transistor 111i. FIG. 19 is a cross-sectional view between the dashed-dotted lines A-B of FIG. 18A, a cross-sectional view between the dashed-dotted lines C-D of FIG. 18B, and a cross-sectional view between the dashed-dotted lines E-F of FIG. 18C. Fig. 20 is a cross-sectional view taken along the dash-dot line G-H in Fig. 18A, a cross-sectional view taken along the dash-dot line I-J in Fig. 18B, and a cross-sectional view taken between the dash-dot line K-L in Fig. 18C.

圖19及圖20所示的電晶體111g包括：基板101上的導電膜102；基板101及導電膜102上的絕緣膜104；絕緣膜104上的多層膜107；接觸於多層膜107的絕緣膜116；以及隔著絕緣膜116與多層膜107重疊的導電膜119。由於多層膜107的結構與〈半導體裝置的結構1〉所示的多層膜107相同，因此省略詳細的說明。 The transistor 111g shown in FIGS. 19 and 20 includes: a conductive film 102 on the substrate 101; an insulating film 104 on the substrate 101 and the conductive film 102; a multilayer film 107 on the insulating film 104; an insulating film in contact with the multilayer film 107 116; and a conductive film 119 overlapping the multilayer film 107 via the insulating film 116. Since the structure of the multilayer film 107 is the same as that of the multilayer film 107 shown in <Structure 1 of Semiconductor Device>, detailed description is omitted.

導電膜102及導電膜119具有閘極電極的功能。換言之，電晶體111g是雙閘極結構的電晶體。另外，絕緣膜104及絕緣膜116具有閘極絕緣膜的功能。 The conductive film 102 and the conductive film 119 have the function of gate electrodes. In other words, the transistor 111g is a transistor with a double gate structure. In addition, the insulating film 104 and the insulating film 116 have the function of a gate insulating film.

由於電晶體111h可以採用與〈半導體裝置的結構1〉所示的電晶體100t同樣的結構，因此省略詳細的說明。 Since the transistor 111h can adopt the same structure as the transistor 100t shown in <Structure 1 of Semiconductor Device>, detailed description is omitted.

圖19及圖20所示的電晶體111i包括：基板101上的導電膜103；基板101及導電膜103上的絕緣膜104；絕緣膜104上的多層膜147；接觸於多層膜147的絕緣膜118；以及隔著絕緣膜118與多層膜147重疊的導電膜121。由於多層膜147的結構與〈半導體裝置的結構1〉所示的多層膜147相同，因此省略詳細的說明。 The transistor 111i shown in FIGS. 19 and 20 includes: a conductive film 103 on the substrate 101; an insulating film 104 on the substrate 101 and the conductive film 103; a multilayer film 147 on the insulating film 104; an insulating film contacting the multilayer film 147 118; and the conductive film 121 overlapping the multilayer film 147 via the insulating film 118. Since the structure of the multilayer film 147 is the same as that of the multilayer film 147 shown in <Structure 1 of Semiconductor Device>, detailed description is omitted.

注意，較佳為在基板101上設置氮化物絕緣膜161。作為氮化物絕緣膜161，有氮化矽膜、氮化鋁膜 等。藉由使用氮化物絕緣膜161及絕緣膜104a覆蓋導電膜102、103，可以防止導電膜102、103中的金屬元素擴散，所以是較佳的。 Note that it is preferable to provide the nitride insulating film 161 on the substrate 101. As the nitride insulating film 161, there are a silicon nitride film, an aluminum nitride film, and the like. By covering the conductive films 102 and 103 with the nitride insulating film 161 and the insulating film 104a, the metal elements in the conductive films 102 and 103 can be prevented from diffusing, so it is preferable.

導電膜103及導電膜121具有閘極電極的功能。換言之，電晶體111i是雙閘極結構的電晶體。另外，絕緣膜104及絕緣膜118具有閘極絕緣膜的功能。 The conductive film 103 and the conductive film 121 have the function of gate electrodes. In other words, the transistor 111i is a transistor with a double gate structure. In addition, the insulating film 104 and the insulating film 118 have the function of a gate insulating film.

注意，雖然圖19及圖20所示的導電膜102、103與多層膜107、147的整個面重疊，但是導電膜102、103也可以分別與多層膜107、147的一部分重疊。 Note that although the conductive films 102 and 103 shown in FIGS. 19 and 20 overlap the entire surface of the multilayer films 107 and 147, the conductive films 102 and 103 may overlap a part of the multilayer films 107 and 147, respectively.

在電晶體111g中，藉由使導電膜102與導電膜119不連接並分別對其施加不同的電位，可以控制電晶體111g的臨界電壓。或者，如圖20所示，藉由使導電膜102與導電膜119連接並對其施加相同的電位，可以降低初始特性偏差，抑制-GBT(-Gate Bias-Temperature)應力測試的劣化，並抑制通態電流的上升電壓在不同的汲極電壓下的變動。另外，藉由如圖20所示那樣使導電膜102與導電膜119連接，導電膜102、119的電場影響到多層膜107的頂面及側面，因此載子在多層膜107整體中流動。換言之，由於載子流動的區域在膜厚度方向上進一步增大，因此載子的遷移量增多。其結果是，電晶體111g在通態電流變大的同時，其場效移動率變高。藉由將電晶體的通道長度設定為小於2.5μm或1.45μm以上且2.2μm以下，可以在進一步增大通態電流的同時，提高其場效移動率。另外，由於電晶體111g的通態電流較大，因此能夠 縮小其平面上的面積。其結果是，能夠製造驅動電路部的佔有面積小且窄邊框化的顯示裝置。 In the transistor 111g, the critical voltage of the transistor 111g can be controlled by disconnecting the conductive film 102 and the conductive film 119 and applying different potentials to them, respectively. Alternatively, as shown in FIG. 20, by connecting the conductive film 102 and the conductive film 119 and applying the same potential to them, it is possible to reduce the initial characteristic deviation, suppress the deterioration of the -GBT (-Gate Bias-Temperature) stress test, and suppress The rise of the on-state current varies with different drain voltages. In addition, by connecting the conductive film 102 and the conductive film 119 as shown in FIG. 20, the electric field of the conductive films 102 and 119 affects the top surface and the side surfaces of the multilayer film 107, so carriers flow through the multilayer film 107 as a whole. In other words, since the region where carriers flow further increases in the film thickness direction, the amount of carrier migration increases. As a result, as the on-state current of the transistor 111g becomes larger, the field effect mobility becomes higher. By setting the channel length of the transistor to less than 2.5 μm or 1.45 μm or more and 2.2 μm or less, it is possible to further increase the on-state current while increasing its field-effect mobility. In addition, since the on-state current of the transistor 111g is large, the area on the plane can be reduced. As a result, it is possible to manufacture a display device with a small occupied area of the drive circuit portion and a narrow frame.

另外，在電晶體111i中，因為採用導電膜103與導電膜121的連接結構，所以具有與電晶體111g同樣的效果。因此，能夠減小平面中的電晶體的佔有面積，而在像素中電晶體的配置的彈性變高。其結果是，能夠製造解析度高的顯示裝置。 In addition, in the transistor 111i, since the connection structure of the conductive film 103 and the conductive film 121 is adopted, it has the same effect as the transistor 111g. Therefore, the area occupied by the transistor in the plane can be reduced, and the elasticity of the arrangement of the transistor in the pixel becomes high. As a result, a display device with high resolution can be manufactured.

在本實施方式所示的顯示裝置中，驅動電路部的電晶體為雙閘極結構。換言之，驅動電路部包括與像素部相比場效移動率高的電晶體。其結果是，可以製造能夠進行高速工作的驅動電路部。另外，藉由使用能夠進行高速工作的電晶體製造驅動電路部並使用寄生電容及寄生電阻少的電晶體製造像素部，可以製造高清晰且能夠進行倍速驅動的顯示裝置。 In the display device shown in this embodiment, the transistor of the drive circuit section has a double gate structure. In other words, the drive circuit section includes transistors having a higher field-effect mobility than the pixel section. As a result, a drive circuit section capable of high-speed operation can be manufactured. In addition, by manufacturing the drive circuit portion using transistors capable of high-speed operation and manufacturing the pixel portion using transistors having low parasitic capacitance and parasitic resistance, a high-definition display device capable of double-speed driving can be manufactured.

〈半導體裝置的結構5〉 <Structure of Semiconductor Device 5>

接著，使用圖21A至圖23說明半導體裝置的其他結構。在此，形成在像素部的電晶體111m為雙閘極結構的電晶體。圖21A為電晶體111j的俯視圖，圖21B為電晶體111k的俯視圖，圖21C為電晶體111m的俯視圖。圖22是圖21A的點劃線A-B間的剖面圖、圖21B的點劃線C-D間的剖面圖以及圖21C的點劃線E-F間的剖面圖。圖23是圖21A的點劃線G-H間的剖面圖、圖21B的點劃線I-J間的剖面圖以及圖21C的點劃線K-L間的剖面圖。 Next, other structures of the semiconductor device will be described using FIGS. 21A to 23. Here, the transistor 111m formed in the pixel portion is a transistor having a double gate structure. 21A is a plan view of the transistor 111j, FIG. 21B is a plan view of the transistor 111k, and FIG. 21C is a plan view of the transistor 111m. FIG. 22 is a cross-sectional view taken along the dash-dot line A-B of FIG. 21A, a cross-sectional view taken along the dash-dot line C-D of FIG. 21B, and a cross-sectional view taken from the dash-dot line E-F of FIG. 21C. Fig. 23 is a cross-sectional view taken along the dash-dot line G-H in Fig. 21A, a cross-sectional view taken along the dash-dot line I-J in Fig. 21B, and a cross-sectional view taken along the dash-dot line K-L in Fig. 21C.

圖22及圖23所示的電晶體111j與〈半導體裝置的結構1〉所示的電晶體100s為相同的單閘極結構，所以省略詳細的說明。 The transistor 111j shown in FIGS. 22 and 23 has the same single-gate structure as the transistor 100s shown in <Structure 1 of Semiconductor Device>, so detailed description is omitted.

圖22及圖23所示的電晶體111k與〈半導體裝置的結構1〉所示的電晶體100t為相同的結構，所以省略詳細的說明。 The transistor 111k shown in FIGS. 22 and 23 has the same structure as the transistor 100t shown in <Structure 1 of Semiconductor Device>, so detailed description is omitted.

圖22及圖23所示的電晶體111m與〈半導體裝置的結構4〉所示的電晶體111i為相同的雙閘極結構，所以省略詳細的說明。 The transistor 111m shown in FIGS. 22 and 23 has the same double gate structure as the transistor 111i shown in <Structure 4 of Semiconductor Device>, so detailed description is omitted.

在本實施方式所示的顯示裝置中，設置在像素部的電晶體111i、111m包括遮蔽入射到多層膜147的光的導電膜103、121。因此，電晶體111i、111m的場效移動率高且關態電流低，而能夠減小平面中的電晶體的佔有面積，所以在像素中，電晶體的配置的彈性得到提高，並且影像品質的劣化較少。其結果是，能夠製造影像品質高且解析度高的顯示裝置。另外，藉由使用寄生電容及寄生電阻少的電晶體製造像素部，可以製造高清晰且能夠進行倍速驅動的顯示裝置。 In the display device described in this embodiment, the transistors 111i and 111m provided in the pixel portion include the conductive films 103 and 121 that block the light incident on the multilayer film 147. Therefore, the field effect mobility of the transistors 111i and 111m is high and the off-state current is low, and the occupied area of the transistor in the plane can be reduced, so in the pixel, the flexibility of the arrangement of the transistor is improved, and the image quality Less degradation. As a result, a display device with high image quality and high resolution can be manufactured. In addition, by manufacturing the pixel portion using transistors with less parasitic capacitance and less parasitic resistance, a high-definition display device capable of double-speed driving can be manufactured.

〈半導體裝置的製造方法1〉 <Manufacturing method 1 of semiconductor device>

接著，使用圖24A至圖27B說明圖11A至圖13所示的電晶體100s、100t、100u的製造方法。 Next, the manufacturing methods of the transistors 100s, 100t, and 100u shown in FIGS. 11A to 13 will be described using FIGS. 24A to 27B.

作為構成電晶體100s、100t、100u的膜(絕緣膜、氧化物半導體膜、導電膜等)，可以適當地使用構成 實施方式1所示的電晶體的膜的製造方法。 As a film (an insulating film, an oxide semiconductor film, a conductive film, etc.) constituting the transistors 100s, 100t, and 100u, a method of manufacturing the film constituting the transistor described in Embodiment 1 can be suitably used.

如圖24A所示，與實施方式1同樣地在基板101上形成絕緣膜104。接著，在驅動電路部的絕緣膜104上形成氧化物半導體膜105，並在像素部的絕緣膜104上形成氧化物半導體膜145。 As shown in FIG. 24A, the insulating film 104 is formed on the substrate 101 in the same manner as in the first embodiment. Next, an oxide semiconductor film 105 is formed on the insulating film 104 of the driver circuit portion, and an oxide semiconductor film 145 is formed on the insulating film 104 of the pixel portion.

在此，作為絕緣膜104利用電漿CVD法形成厚度為300nm的氧氮化矽膜。 Here, as the insulating film 104, a silicon oxynitride film with a thickness of 300 nm is formed by a plasma CVD method.

氧化物半導體膜105、106、108、145、146可以與實施方式1所示的氧化物半導體膜105、106、108同樣地被形成。 The oxide semiconductor films 105, 106, 108, 145, and 146 can be formed in the same manner as the oxide semiconductor films 105, 106, and 108 described in the first embodiment.

另外，與實施方式1同樣地，也可以在形成氧化物半導體膜之後進行加熱處理，來實現氧化物半導體膜的脫氫化或脫水化。 In addition, as in the first embodiment, after the oxide semiconductor film is formed, heat treatment may be performed to achieve dehydrogenation or dehydration of the oxide semiconductor film.

在此，藉由濺射法形成厚度為35nm的氧化物半導體膜。接著，在該氧化物半導體膜上形成遮罩，並選擇性地對氧化物半導體膜的一部分進行蝕刻，形成氧化物半導體膜105、145。注意，作為氧化物半導體膜，形成In：Ga：Zn=3：1：2的In-Ga-Zn氧化物膜。 Here, an oxide semiconductor film with a thickness of 35 nm is formed by a sputtering method. Next, a mask is formed on the oxide semiconductor film, and a part of the oxide semiconductor film is selectively etched to form oxide semiconductor films 105 and 145. Note that as the oxide semiconductor film, an In-Ga-Zn oxide film of In:Ga:Zn=3:1:2 is formed.

接著，如圖24B所示，在驅動電路部中，在氧化物半導體膜105上形成氧化物半導體膜106，在像素部中，形成氧化物半導體膜108，並在氧化物半導體膜145上形成氧化物半導體膜146。也就是說，形成依次層疊有氧化物半導體膜105及氧化物半導體膜106的多層膜107。另外，形成依次層疊有氧化物半導體膜145及氧化 物半導體膜146的多層膜147。 Next, as shown in FIG. 24B, in the driver circuit portion, an oxide semiconductor film 106 is formed on the oxide semiconductor film 105, and in the pixel portion, an oxide semiconductor film 108 is formed, and an oxide is formed on the oxide semiconductor film 145物膜膜146. That is, the multilayer film 107 in which the oxide semiconductor film 105 and the oxide semiconductor film 106 are sequentially stacked is formed. In addition, a multilayer film 147 in which an oxide semiconductor film 145 and an oxide semiconductor film 146 are sequentially stacked is formed.

注意，在該製程中，藉由以覆蓋氧化物半導體膜105的頂面及側面的方式形成氧化物半導體膜106，防止氧化物半導體膜105在後面的形成具有源極電極及汲極電極的功能的導電膜的製程中被蝕刻。另外，藉由以覆蓋氧化物半導體膜145的頂面及側面的方式形成氧化物半導體膜146，防止氧化物半導體膜145在後面的形成具有源極電極及汲極電極的功能的導電膜的製程中被蝕刻。其結果是，可以降低電晶體的通道寬度方向上的氧化物半導體膜105、145的長度的變動，所以是較佳的。 Note that in this process, by forming the oxide semiconductor film 106 in such a way as to cover the top and side surfaces of the oxide semiconductor film 105, the formation of the oxide semiconductor film 105 is prevented from having the functions of source electrode and drain electrode The conductive film is etched during the process. In addition, by forming the oxide semiconductor film 146 so as to cover the top and side surfaces of the oxide semiconductor film 145, the oxide semiconductor film 145 is prevented from forming a conductive film having the functions of the source electrode and the drain electrode behind中etched. As a result, the variation in the length of the oxide semiconductor films 105 and 145 in the channel width direction of the transistor can be reduced, which is preferable.

在此，藉由濺射法形成厚度為20nm的氧化物半導體膜。接著，在該氧化物半導體膜上形成遮罩，並選擇性地對氧化物半導體膜的一部分進行蝕刻，形成氧化物半導體膜106、108、146。注意，作為氧化物半導體膜106、108、146，形成In：Ga：Zn=1：1：1.2的In-Ga-Zn氧化物膜。 Here, an oxide semiconductor film with a thickness of 20 nm is formed by a sputtering method. Next, a mask is formed on the oxide semiconductor film, and a part of the oxide semiconductor film is selectively etched to form oxide semiconductor films 106, 108, and 146. Note that as the oxide semiconductor films 106, 108, and 146, an In-Ga-Zn oxide film of In:Ga:Zn=1:1:1:2 is formed.

接著，進行加熱處理，使絕緣膜104所含的氧移動到氧化物半導體膜。注意，該加熱處理也可以在形成成為氧化物半導體膜106、108、146的氧化物半導體膜之後且在對該氧化物半導體膜進行蝕刻而形成氧化物半導體膜106、108、146之前進行。 Next, heat treatment is performed to move the oxygen contained in the insulating film 104 to the oxide semiconductor film. Note that this heat treatment may be performed after the oxide semiconductor films that form the oxide semiconductor films 106, 108, and 146 are formed and before the oxide semiconductor films are etched to form the oxide semiconductor films 106, 108, and 146.

另外，藉由在高於350℃且為650℃以下，或450℃以上且600℃以下的溫度下進行加熱處理，能夠獲得後述的CAAC化率為60%以上且低於100%，或80%以 上且低於100%，或90%以上且低於100%，或95%以上且98%以下的氧化物半導體膜。此外，能夠獲得氫、水等的含量得到降低的氧化物半導體膜。即，能夠形成雜質濃度低且缺陷態密度低的氧化物半導體膜。 In addition, by performing heat treatment at a temperature higher than 350° C. and 650° C. or lower, or 450° C. or higher and 600° C. or lower, the CAAC conversion rate to be described later can be 60% or higher and lower than 100%, or 80% An oxide semiconductor film of above and below 100%, or above 90% and below 100%, or above 95% and below 98%. In addition, an oxide semiconductor film with a reduced content of hydrogen, water, etc. can be obtained. That is, an oxide semiconductor film having a low impurity concentration and a low density of defect states can be formed.

接著，如圖25A所示，與實施方式1同樣地，在絕緣膜104、多層膜107、147及氧化物半導體膜108上形成絕緣膜115。接著，與實施方式1同樣地，在絕緣膜115上形成導電膜119、120、121。 Next, as shown in FIG. 25A, as in Embodiment 1, an insulating film 115 is formed on the insulating film 104, the multilayer films 107, 147, and the oxide semiconductor film 108. Next, as in Embodiment 1, conductive films 119, 120, and 121 are formed on the insulating film 115.

在此，作為絕緣膜115，藉由電漿CVD法形成厚度為100nm的氧氮化矽膜。 Here, as the insulating film 115, a silicon oxynitride film having a thickness of 100 nm is formed by a plasma CVD method.

另外，在此，在導電膜上藉由光微影製程形成遮罩122、123、124之後，對該導電膜進行蝕刻，來形成導電膜119、120、121。 In addition, here, after the masks 122, 123, and 124 are formed on the conductive film by the photolithography process, the conductive film is etched to form the conductive films 119, 120, and 121.

接著，如圖25B所示，與實施方式1同樣地，在殘留著遮罩122、123、124的情況下對絕緣膜115進行蝕刻，由此形成絕緣膜116、117、118。 Next, as shown in FIG. 25B, the insulating film 115 is etched with the masks 122, 123, and 124 remaining as in Embodiment 1, thereby forming the insulating films 116, 117, and 118.

接著，如圖26A所示，與實施方式1同樣地，在殘留著遮罩122、123、124的情況下對多層膜107、147及氧化物半導體膜108添加雜質元素125。其結果是，對多層膜107、147及氧化物半導體膜108中的沒有被遮罩122、123、124覆蓋的區域添加雜質元素。另外，藉由添加雜質元素125，在多層膜107、147及氧化物半導體膜108中形成氧缺陷。 Next, as shown in FIG. 26A, as in the first embodiment, the impurity elements 125 are added to the multilayer films 107 and 147 and the oxide semiconductor film 108 with the masks 122, 123 and 124 remaining. As a result, impurity elements are added to the regions of the multilayer films 107 and 147 and the oxide semiconductor film 108 that are not covered by the masks 122, 123, and 124. In addition, by adding the impurity element 125, oxygen defects are formed in the multilayer films 107 and 147 and the oxide semiconductor film 108.

其結果是，可以在多層膜107中形成低電阻區域107b、107c。可以在氧化物半導體膜108中形成低電阻區域108b、108c。另外，可以在多層膜147中形成低電阻區域147b、147c。然後，去除遮罩122、123、124。 As a result, low resistance regions 107b and 107c can be formed in the multilayer film 107. The low resistance regions 108b and 108c may be formed in the oxide semiconductor film 108. In addition, the low resistance regions 147b and 147c may be formed in the multilayer film 147. Then, the masks 122, 123, and 124 are removed.

注意，若在導電膜119、120、121露出的狀態下添加雜質元素125，導電膜119、120、121的一部分則會剝離而附著於絕緣膜116、117、118的側面。其結果是，導致電晶體的洩漏電流增大。因此，藉由在由遮罩122、123、124覆蓋導電膜119、120、121的狀態下對多層膜107、147及氧化物半導體膜108添加雜質元素125，能夠防止導電膜119、120、121的一部分附著於絕緣膜116、117、118的側面。注意，也可以在去除遮罩122、123、124之後對多層膜107、147及氧化物半導體膜108添加雜質元素125。 Note that if the impurity element 125 is added in the state where the conductive films 119, 120, and 121 are exposed, part of the conductive films 119, 120, and 121 will peel off and adhere to the side surfaces of the insulating films 116, 117, and 118. As a result, the leakage current of the transistor increases. Therefore, by adding the impurity element 125 to the multilayer films 107, 147 and the oxide semiconductor film 108 in a state where the conductive films 119, 120, 121 are covered with the masks 122, 123, 124, the conductive films 119, 120, 121 can be prevented Is attached to the side surfaces of the insulating films 116, 117, and 118. Note that the impurity elements 125 may be added to the multilayer films 107, 147 and the oxide semiconductor film 108 after removing the masks 122, 123, and 124.

然後，與實施方式1同樣地，也可以進行加熱處理來進一步提高添加有雜質元素125的區域的導電性。 Then, as in the first embodiment, heat treatment may be performed to further increase the conductivity of the region where the impurity element 125 is added.

接著，如圖27A所示，與實施方式1同樣地，在絕緣膜104、多層膜107、147及氧化物半導體膜108、絕緣膜116、117、118、導電膜119、120、121上形成絕緣膜126。 Next, as shown in FIG. 27A, as in the first embodiment, insulation is formed on the insulating film 104, the multilayer films 107, 147 and the oxide semiconductor film 108, the insulating films 116, 117, 118, the conductive films 119, 120, 121膜126.

在此，作為絕緣膜126，利用電漿CVD法形成厚度為100nm的氮化矽膜。 Here, as the insulating film 126, a silicon nitride film with a thickness of 100 nm is formed by a plasma CVD method.

然後，與實施方式1同樣地，也可以進行加 熱處理來進一步提高低電阻區域107b、107c、108b、108c、147b、147c的導電性。典型的是，加熱處理的溫度為150℃以上且低於基板的應變點，或250℃以上且450℃以下，或300℃以上且450℃以下。 Then, as in the first embodiment, addition Heat treatment further improves the electrical conductivity of the low-resistance regions 107b, 107c, 108b, 108c, 147b, and 147c. Typically, the temperature of the heat treatment is 150°C or higher and lower than the strain point of the substrate, or 250°C or higher and 450°C or lower, or 300°C or higher and 450°C or lower.

接著，如圖27A所示，與實施方式1同樣地，也可以形成絕緣膜127。藉由形成絕緣膜127，能夠降低將在後面形成的導電膜134、135、136、137、138、139與導電膜119、120、121之間的寄生電容。 Next, as shown in FIG. 27A, as in Embodiment 1, an insulating film 127 may be formed. By forming the insulating film 127, the parasitic capacitance between the conductive films 134, 135, 136, 137, 138, 139 and the conductive films 119, 120, and 121 to be formed later can be reduced.

接著，與實施方式1同樣地，在絕緣膜126、127中形成開口部128、129、130、131、132、133(參照圖21A至圖21C)，使低電阻區域的一部分露出之後，形成導電膜134、135、136、137、138、139。此外，較佳為形成氮化物絕緣膜162(參照圖27B)。 Next, as in Embodiment 1, openings 128, 129, 130, 131, 132, and 133 (see FIGS. 21A to 21C) are formed in the insulating films 126, 127, and a part of the low-resistance region is exposed to form a conductive layer. Films 134, 135, 136, 137, 138, 139. In addition, it is preferable to form a nitride insulating film 162 (see FIG. 27B).

導電膜134、135、136、137、138、139可以適當地使用與導電膜119、120同樣的形成方法。氮化物絕緣膜162可以適當地使用濺射法、CVD法等形成。 For the conductive films 134, 135, 136, 137, 138, and 139, the same forming method as the conductive films 119 and 120 can be used as appropriate. The nitride insulating film 162 can be formed using a sputtering method, a CVD method, or the like as appropriate.

藉由上述製程，可以製造電晶體100s、100t、100u。 Through the above process, transistors 100s, 100t, and 100u can be manufactured.

〈半導體裝置的製造方法2〉 <Manufacturing method 2 of semiconductor device>

接著，說明圖18A至圖20所示的電晶體111g、111h、111i的製造方法。 Next, a method of manufacturing the transistors 111g, 111h, and 111i shown in FIGS. 18A to 20 will be described.

在基板101上形成氮化物絕緣膜161，並在氮化物絕緣膜161上形成導電膜102、103。導電膜102、 103可以適當地使用導電膜119、120的製造方法。 A nitride insulating film 161 is formed on the substrate 101, and conductive films 102 and 103 are formed on the nitride insulating film 161. Conductive film 102, 103 The manufacturing method of the conductive films 119 and 120 can be suitably used.

接著，在氮化物絕緣膜161及導電膜102、103上形成絕緣膜104。 Next, an insulating film 104 is formed on the nitride insulating film 161 and the conductive films 102 and 103.

然後，藉由圖24A和圖24B的製程形成多層膜107、147及氧化物半導體膜108。 Then, the multilayer films 107 and 147 and the oxide semiconductor film 108 are formed by the processes of FIGS. 24A and 24B.

接著，如圖25A所示，在形成絕緣膜115之後，對絕緣膜115的一部分進行蝕刻，從而形成圖18A所示的開口部113及圖18C所示的開口部114。 Next, as shown in FIG. 25A, after forming the insulating film 115, a part of the insulating film 115 is etched to form the opening 113 shown in FIG. 18A and the opening 114 shown in FIG. 18C.

接著，在形成圖25A所示的導電膜119、120、121之後，可以藉由與圖25B、圖26A、圖26B、圖27A及圖27B同樣的製程製造電晶體111g、111h、111i。 Next, after forming the conductive films 119, 120, and 121 shown in FIG. 25A, the transistors 111g, 111h, and 111i can be manufactured by the same process as in FIGS. 25B, 26A, 26B, 27A, and 27B.

在本實施方式所示的電晶體中，由於具有源極電極以及汲極電極的功能的導電膜不與具有閘極電極的功能的導電膜重疊，因此能夠降低寄生電容，所以通態電流較大。另外，在本實施方式所示的電晶體中，可以穩定地形成低電阻區域，所以與習知的電晶體相比，其通態電流得到提高，並且其電特性的偏差得到減少。 In the transistor shown in this embodiment, since the conductive film having the functions of the source electrode and the drain electrode does not overlap with the conductive film having the function of the gate electrode, the parasitic capacitance can be reduced, so the on-state current is large . In addition, in the transistor shown in this embodiment, the low-resistance region can be formed stably, so that the on-state current is improved and the variation in the electrical characteristics is reduced compared to the conventional transistor.

本實施方式所示的結構及方法等可以與其他實施方式所示的結構及方法等適當地組合而實施。 The structure and method shown in this embodiment can be implemented in appropriate combination with the structure and method shown in other embodiments.

實施方式3 Embodiment 3

在此，使用圖29A至圖33B說明前面的實施方式所示的電晶體的變形例子。在此，作為電晶體，以形成在像素部的電晶體為代表例子進行說明。圖29A至圖29F所 示的電晶體包括：形成在基板101上的絕緣膜104上的氧化物半導體膜108；與氧化物半導體膜108接觸的絕緣膜117；以及與絕緣膜117接觸且與氧化物半導體膜108重疊的導電膜120。 Here, a modified example of the transistor shown in the previous embodiment will be described using FIGS. 29A to 33B. Here, as the transistor, the transistor formed in the pixel portion will be described as a representative example. Figure 29A to Figure 29F The transistor shown includes: an oxide semiconductor film 108 formed on an insulating film 104 on a substrate 101; an insulating film 117 in contact with the oxide semiconductor film 108; and an oxide semiconductor film 108 in contact with the insulating film 117 and overlapping the oxide semiconductor film 108 Conductive film 120.

另外，在電晶體中設置有與氧化物半導體膜108接觸的絕緣膜126以及與絕緣膜126接觸的絕緣膜127。另外，在電晶體中設置有藉由絕緣膜126及絕緣膜127的開口部與氧化物半導體膜108接觸的導電膜136、137。 In addition, an insulating film 126 in contact with the oxide semiconductor film 108 and an insulating film 127 in contact with the insulating film 126 are provided in the transistor. In addition, the transistors are provided with conductive films 136 and 137 in contact with the oxide semiconductor film 108 through the openings of the insulating film 126 and the insulating film 127.

在圖29A所示的電晶體中，氧化物半導體膜108包括：形成在與導電膜120重疊的區域的通道區域108a；以及夾著通道區域108a且包含雜質元素的區域，即低電阻區域108b、108c。另外，導電膜136、137與低電阻區域108b、108c接觸。 In the transistor shown in FIG. 29A, the oxide semiconductor film 108 includes: a channel region 108a formed in a region overlapping the conductive film 120; and a region containing an impurity element sandwiching the channel region 108a, that is, a low resistance region 108b, 108c. In addition, the conductive films 136 and 137 are in contact with the low-resistance regions 108b and 108c.

或者，如圖29B所示的電晶體，也可以不對在氧化物半導體膜108中與導電膜136、137接觸的區域108d、108e添加雜質元素。此時，在與導電膜136、137接觸的區域108d、108e與通道區域108a之間包括包含雜質元素的區域，即低電阻區域108b、108c。注意，由於當導電膜136、137被施加電壓時具有導電性，因此區域108d、108e具有源極區域及汲極區域的功能。 Alternatively, as in the transistor shown in FIG. 29B, the impurity elements may not be added to the regions 108d and 108e of the oxide semiconductor film 108 that are in contact with the conductive films 136 and 137. At this time, regions containing impurity elements, that is, low-resistance regions 108b and 108c, are included between the regions 108d and 108e in contact with the conductive films 136 and 137 and the channel region 108a. Note that since the conductive films 136 and 137 have conductivity when voltage is applied, the regions 108d and 108e have the functions of the source region and the drain region.

在形成導電膜136、137之後，將導電膜120及導電膜136、137用作遮罩，並對氧化物半導體膜添加雜質元素，由此形成圖29B所示的電晶體。After the conductive films 136 and 137 are formed, the conductive film 120 and the conductive films 136 and 137 are used as masks, and an impurity element is added to the oxide semiconductor film, thereby forming the transistor shown in FIG. 29B.

在導電膜120中，導電膜120的端部也可以是錐形狀。也就是說，由絕緣膜117及導電膜120相互接觸的面與導電膜120的側面所形成的角度θ1也可以是低於90°，或10°以上且85°以下，或15°以上且85°以下，或30°以上且85°以下，或45°以上且85°以下，或60°以上且85°以下。藉由將角度θ1設定為低於90°，或10°以上且85°以下，或15°以上且85°以下，或30°以上且85°以下，或45°以上且85°以下，或60°以上且85°以下，能夠提高絕緣膜117及導電膜120的側面的絕緣膜126的覆蓋性。 In the conductive film 120, the end of the conductive film 120 may be tapered. That is, the angle θ1 formed by the surface where the insulating film 117 and the conductive film 120 are in contact with each other and the side surface of the conductive film 120 may be less than 90°, or 10° or more and 85° or less, or 15° or more and 85 Below °, or above 30° and below 85°, or above 45° and below 85°, or above 60° and below 85°. By setting the angle θ1 below 90°, or above 10° and below 85°, or above 15° and below 85°, or above 30° and below 85°, or above 45° and below 85°, or 60 From ° to 85°, the coverage of the insulating film 126 on the side surfaces of the insulating film 117 and the conductive film 120 can be improved.

接著，說明低電阻區域108b、108c的變形例子。圖29C至圖29F是圖29A所示的氧化物半導體膜108附近的放大圖。在此，通道長度L是一對低電阻區域的間隔。 Next, a modified example of the low resistance regions 108b and 108c will be described. 29C to 29F are enlarged views of the vicinity of the oxide semiconductor film 108 shown in FIG. 29A. Here, the channel length L is the interval between a pair of low resistance regions.

如圖29C所示，在通道長度方向的剖面形狀中，通道區域108a及低電阻區域108b、108c的邊界隔著絕緣膜117與導電膜120的端部一致或大致一致。換言之，在俯視形狀中，通道區域108a及低電阻區域108b、108c的邊界與導電膜120的端部一致或大致一致。 As shown in FIG. 29C, in the cross-sectional shape of the channel length direction, the boundary between the channel region 108 a and the low-resistance regions 108 b and 108 c coincides with or substantially coincides with the end of the conductive film 120 via the insulating film 117. In other words, in the plan view shape, the boundary between the channel region 108 a and the low-resistance regions 108 b and 108 c coincides with or substantially coincides with the end of the conductive film 120.

或者，如圖29D所示，在通道長度方向的剖面形狀中，通道區域108a包括不與導電膜120的端部重疊的區域。該區域被用作偏置(offset)區域。Loff表示通道長度方向上的偏置區域的長度。注意，當偏置區域為多個時，將一個偏置區域的長度稱為Loff。Loff包括在通道長 度L中。另外，Loff低於通道長度L的20%，或低於10%，或低於5%，或低於2%。 Alternatively, as shown in FIG. 29D, in the cross-sectional shape in the channel length direction, the channel region 108a includes a region that does not overlap the end of the conductive film 120. This area is used as an offset area. L off represents the length of the offset region in the channel length direction. Note that when there are multiple offset regions, the length of one offset region is called L off . L off is included in the channel length L. In addition, L off is less than 20% of the channel length L, or less than 10%, or less than 5%, or less than 2%.

或者，如圖29E所示，在通道長度方向的剖面形狀中，低電阻區域108b、108c包括隔著絕緣膜117與導電膜120重疊的區域。該區域被用作重疊區域。Lov表示通道長度方向上的重疊區域的長度。Lov低於通道長度L的20%，或低於10%，或低於5%，或低於2%。 Alternatively, as shown in FIG. 29E, in the cross-sectional shape of the channel length direction, the low-resistance regions 108b and 108c include regions overlapping the conductive film 120 via the insulating film 117. This area is used as an overlap area. L ov represents the length of the overlapping area in the channel length direction. L ov is less than 20% of the channel length L, or less than 10%, or less than 5%, or less than 2%.

或者，如圖29F所示，在通道長度方向的剖面形狀中，在通道區域108a與低電阻區域108b之間包括低電阻區域108f，在通道區域108a與低電阻區域108c之間包括低電阻區域108g。與低電阻區域108b、108c相比，低電阻區域108f、108g的雜質元素的濃度較低且電阻率較高。雖然在此低電阻區域108f、108g與絕緣膜117重疊，但是也可以與絕緣膜117及導電膜120重疊。 Alternatively, as shown in FIG. 29F, in the cross-sectional shape of the channel length direction, a low resistance region 108f is included between the channel region 108a and the low resistance region 108b, and a low resistance region 108g is included between the channel region 108a and the low resistance region 108c . Compared with the low-resistance regions 108b and 108c, the low-resistance regions 108f and 108g have a lower impurity element concentration and a higher resistivity. Although the low-resistance regions 108f and 108g overlap the insulating film 117 here, they may overlap the insulating film 117 and the conductive film 120.

雖然在圖29C至圖29F中說明了圖29A所示的電晶體，但是也可以對圖29B所示的電晶體適當地應用圖29C至圖29F的結構。 Although the transistor shown in FIG. 29A is explained in FIGS. 29C to 29F, the structure of FIGS. 29C to 29F can be appropriately applied to the transistor shown in FIG. 29B.

在圖30A所示的電晶體中，絕緣膜117的端部位於導電膜120的端部的外側。也就是說，絕緣膜117具有其端部比導電膜120的端部突出的形狀。由於能夠使通道區域108a與絕緣膜126相離較遠，因此可以抑制絕緣膜126所包含的氮、氫等進入通道區域108a。 In the transistor shown in FIG. 30A, the end of the insulating film 117 is located outside the end of the conductive film 120. That is to say, the insulating film 117 has a shape whose end protrudes from the end of the conductive film 120. Since the channel region 108a and the insulating film 126 can be separated from each other, it is possible to suppress nitrogen, hydrogen, and the like contained in the insulating film 126 from entering the channel region 108a.

在圖30B所示的電晶體中，絕緣膜117及導電膜120是錐形狀，且各錐部的角度不同。換言之，角度 θ1與角度θ2不同，角度θ1是由絕緣膜117及導電膜120相互接觸的面與導電膜120的側面所形成的，而角度θ2是氧化物半導體膜108及絕緣膜117相互接觸的面與絕緣膜117的側面所形成的。角度θ2也可以是低於90°，或30°以上且85°以下，或45°以上且70°以下。例如，當角度θ2小於角度θ1時，絕緣膜126的覆蓋性提高。另外，當角度θ2大於角度θ1時，能夠使電晶體微型化。 In the transistor shown in FIG. 30B, the insulating film 117 and the conductive film 120 are tapered, and the angles of the tapered portions are different. In other words, the angle θ1 is different from the angle θ2. The angle θ1 is formed by the surface where the insulating film 117 and the conductive film 120 are in contact with each other and the side surface of the conductive film 120, and the angle θ2 is when the oxide semiconductor film 108 and the insulating film 117 are in contact with each other. And the side surface of the insulating film 117. The angle θ2 may be less than 90°, or 30° or more and 85° or less, or 45° or more and 70° or less. For example, when the angle θ2 is smaller than the angle θ1, the coverage of the insulating film 126 is improved. In addition, when the angle θ2 is greater than the angle θ1, the transistor can be miniaturized.

接著，使用圖30C至圖30F說明低電阻區域108b、108c的變形例子。注意，圖30C至圖30F是圖30A所示的氧化物半導體膜108附近的放大圖。 Next, a modified example of the low-resistance regions 108b and 108c will be described using FIGS. 30C to 30F. Note that FIGS. 30C to 30F are enlarged views of the vicinity of the oxide semiconductor film 108 shown in FIG. 30A.

如圖30C所示，在通道長度方向的剖面形狀中，通道區域108a及低電阻區域108b、108c的邊界隔著絕緣膜117與導電膜120的端部一致或大致一致。換言之，在俯視形狀中，通道區域108a及低電阻區域108b、108c的邊界與導電膜120的端部一致或大致一致。 As shown in FIG. 30C, in the cross-sectional shape of the channel length direction, the boundary between the channel region 108 a and the low-resistance regions 108 b and 108 c coincides with or substantially coincides with the end of the conductive film 120 via the insulating film 117. In other words, in the plan view shape, the boundary between the channel region 108 a and the low-resistance regions 108 b and 108 c coincides with or substantially coincides with the end of the conductive film 120.

或者，如圖30D所示，在通道長度方向的剖面形狀中，通道區域108a包括不與導電膜120重疊的區域。該區域被用作偏置區域。也就是說，在俯視形狀中，低電阻區域108b、108c的端部與絕緣膜117的端部一致或大致一致且不與導電膜120的端部重疊。 Alternatively, as shown in FIG. 30D, in the cross-sectional shape of the channel length direction, the channel region 108a includes a region that does not overlap with the conductive film 120. This area is used as an offset area. That is, in a plan view shape, the end portions of the low-resistance regions 108 b and 108 c coincide or substantially coincide with the end portions of the insulating film 117 and do not overlap the end portions of the conductive film 120.

或者，如圖30E所示，在通道長度方向的剖面形狀中，低電阻區域108b、108c包括隔著絕緣膜117與導電膜120重疊的區域。將該區域稱為重疊區域。換言之，在俯視形狀中，低電阻區域108b、108c的端部與導 電膜120重疊。 Alternatively, as shown in FIG. 30E, in the cross-sectional shape in the channel length direction, the low-resistance regions 108 b and 108 c include regions overlapping the conductive film 120 via the insulating film 117. This area is called an overlap area. In other words, in the plan view shape, the ends of the low resistance regions 108b and 108c overlap the conductive film 120.

或者，如圖30F所示，在通道長度方向的剖面形狀中，在通道區域108a與低電阻區域108b之間包括低電阻區域108f，在通道區域108a與低電阻區域108c之間包括低電阻區域108g。與低電阻區域108b、108c相比，低電阻區域108f、108g的雜質元素的濃度較低且電阻率較高。雖然在此低電阻區域108f、108g與絕緣膜117重疊，但是也可以與絕緣膜117及導電膜120重疊。 Alternatively, as shown in FIG. 30F, in the cross-sectional shape of the channel length direction, a low resistance region 108f is included between the channel region 108a and the low resistance region 108b, and a low resistance region 108g is included between the channel region 108a and the low resistance region 108c . Compared with the low-resistance regions 108b and 108c, the low-resistance regions 108f and 108g have a lower impurity element concentration and a higher resistivity. Although the low-resistance regions 108f and 108g overlap the insulating film 117 here, they may overlap the insulating film 117 and the conductive film 120.

雖然在圖30C至圖30F中說明了圖30A所示的電晶體，但是也可以對圖30B所示的電晶體適當地應用圖30C至圖30F的結構。 Although the transistor shown in FIG. 30A is explained in FIGS. 30C to 30F, the structure of FIGS. 30C to 30F may be appropriately applied to the transistor shown in FIG. 30B.

在圖31A所示的電晶體中，導電膜120是疊層結構，並包括與絕緣膜117接觸的導電膜120a以及與導電膜120a接觸的導電膜120b。另外，導電膜120a的端部位於導電膜120b的端部的外側。換言之，導電膜120a具有其端部比導電膜120b的端部突出的形狀。 In the transistor shown in FIG. 31A, the conductive film 120 is a laminated structure, and includes a conductive film 120a in contact with the insulating film 117 and a conductive film 120b in contact with the conductive film 120a. In addition, the end of the conductive film 120a is located outside the end of the conductive film 120b. In other words, the conductive film 120a has a shape whose end portion protrudes from the end portion of the conductive film 120b.

接著，說明低電阻區域108b、108c的變形例子。注意，圖31B至圖31E、圖32A及圖32B是圖31A所示的氧化物半導體膜108附近的放大圖。 Next, a modified example of the low resistance regions 108b and 108c will be described. Note that FIGS. 31B to 31E, FIGS. 32A, and 32B are enlarged views of the vicinity of the oxide semiconductor film 108 shown in FIG. 31A.

如圖31B所示，在通道長度方向的剖面形狀中，通道區域108a及低電阻區域108b、108c的邊界隔著絕緣膜117與導電膜120所包括的導電膜120a的端部一致或大致一致。換言之，在俯視形狀中，通道區域108a及低電阻區域108b、108c的邊界與導電膜120的端部一 致或大致一致。 As shown in FIG. 31B, in the cross-sectional shape of the channel length direction, the boundary between the channel region 108 a and the low-resistance regions 108 b and 108 c coincides with or substantially coincides with the end of the conductive film 120 a included in the conductive film 120 via the insulating film 117. In other words, in a plan view shape, the boundary between the channel region 108a and the low-resistance regions 108b and 108c coincides with or substantially coincides with the end of the conductive film 120.

或者，如圖31C所示，在通道長度方向的剖面形狀中，通道區域108a包括不與導電膜120重疊的區域。該區域被用作偏置區域。也就是說，在俯視形狀中，低電阻區域108b、108c的端部不與導電膜120的端部重疊。 Alternatively, as shown in FIG. 31C, in the cross-sectional shape of the channel length direction, the channel region 108a includes a region that does not overlap with the conductive film 120. This area is used as an offset area. That is, in the plan view shape, the ends of the low-resistance regions 108b and 108c do not overlap the ends of the conductive film 120.

或者，如圖31D所示，在通道長度方向的剖面形狀中，低電阻區域108b、108c包括與導電膜120(在此為導電膜120a)重疊的區域。將該區域稱為重疊區域。換言之，在俯視形狀中，低電阻區域108b、108c的端部與導電膜120a重疊。 Alternatively, as shown in FIG. 31D, in the cross-sectional shape in the channel length direction, the low-resistance regions 108b and 108c include regions overlapping the conductive film 120 (here, the conductive film 120a). This area is called an overlap area. In other words, in the plan view shape, the ends of the low-resistance regions 108b and 108c overlap the conductive film 120a.

或者，如圖31E所示，在通道長度方向的剖面形狀中，在通道區域108a與低電阻區域108b之間包括低電阻區域108f，在通道區域108a與低電阻區域108c之間包括低電阻區域108g。雜質元素透過導電膜120a添加到低電阻區域108f、108g，因此與低電阻區域108b、108c相比，低電阻區域108f、108g的雜質元素的濃度較低且電阻率較高。雖然在此低電阻區域108f、108g與導電膜120a重疊，但是也可以與導電膜120a及導電膜120b重疊。 Alternatively, as shown in FIG. 31E, in the cross-sectional shape of the channel length direction, a low resistance region 108f is included between the channel region 108a and the low resistance region 108b, and a low resistance region 108g is included between the channel region 108a and the low resistance region 108c . Impurity elements are added to the low-resistance regions 108f and 108g through the conductive film 120a. Therefore, the impurity elements in the low-resistance regions 108f and 108g have a lower concentration and higher resistivity than the low-resistance regions 108b and 108c. Although the low-resistance regions 108f and 108g overlap the conductive film 120a here, they may overlap the conductive film 120a and the conductive film 120b.

或者，如圖32A所示，在通道長度方向的剖面形狀中，導電膜120a的端部位於導電膜120b的端部的外側，並且導電膜120a也可以是錐形狀。也就是說，由絕緣膜117及導電膜120a相互接觸的面與導電膜120a的 側面所形成的角度也可以是低於90°，或5°以上且45°以下，或5°以上且30°以下。 Alternatively, as shown in FIG. 32A, in the cross-sectional shape of the channel length direction, the end of the conductive film 120a is located outside the end of the conductive film 120b, and the conductive film 120a may have a tapered shape. That is, the angle formed by the surface where the insulating film 117 and the conductive film 120a are in contact with each other and the side surface of the conductive film 120a may be less than 90°, or 5° or more and 45° or less, or 5° or more and 30° the following.

再者，絕緣膜117的端部也可以位於導電膜120a的端部的外側。 In addition, the end of the insulating film 117 may be located outside the end of the conductive film 120a.

再者，絕緣膜117的側面也可以是彎曲的。 Furthermore, the side surface of the insulating film 117 may be curved.

再者，絕緣膜117也可以是錐形狀。也就是說，由氧化物半導體膜108及絕緣膜117相互接觸的面與絕緣膜117的側面所形成的角度低於90°，較佳為30°以上且低於90°。 In addition, the insulating film 117 may have a tapered shape. That is, the angle formed by the surface where the oxide semiconductor film 108 and the insulating film 117 are in contact with each other and the side surface of the insulating film 117 is less than 90°, preferably 30° or more and less than 90°.

圖32A所示的氧化物半導體膜108包括：通道區域108a；夾著通道區域108a的低電阻區域108f、108g；夾著低電阻區域108f、108g的低電阻區域108h、108i；以及夾著低電阻區域108h、108i的低電阻區域108b、108c。雜質元素透過絕緣膜117及導電膜120a添加到低電阻區域108f、108g、108h、108i，因此與低電阻區域108b、108c相比，低電阻區域108f、108g、108h、108i的雜質元素的濃度較低且電阻率較高。 The oxide semiconductor film 108 shown in FIG. 32A includes: a channel region 108a; low resistance regions 108f, 108g sandwiching the channel region 108a; low resistance regions 108h, 108i sandwiching the low resistance regions 108f, 108g; and low resistance The low resistance regions 108b and 108c of the regions 108h and 108i. Impurity elements are added to the low-resistance regions 108f, 108g, 108h, and 108i through the insulating film 117 and the conductive film 120a. Therefore, the concentration of impurity elements in the low-resistance regions 108f, 108g, 108h, and 108i is higher than that of the low-resistance regions 108b and 108c. Low and high resistivity.

圖32B所示的氧化物半導體膜108包括：通道區域108a；夾著通道區域108a的低電阻區域108h、108i；以及夾著低電阻區域108h、108i的低電阻區域108b、108c。雜質元素透過絕緣膜117添加到低電阻區域108h、108i，因此與低電阻區域108b、108c相比，低電阻區域108h、108i的雜質元素的濃度較低且電阻率較高。 The oxide semiconductor film 108 shown in FIG. 32B includes: a channel region 108a; low resistance regions 108h, 108i sandwiching the channel region 108a; and low resistance regions 108b, 108c sandwiching the low resistance regions 108h, 108i. Impurity elements are added to the low-resistance regions 108h and 108i through the insulating film 117. Therefore, the impurity elements in the low-resistance regions 108h and 108i have a lower concentration and higher resistivity than the low-resistance regions 108b and 108c.

注意，在通道長度方向中，通道區域108a與導電膜120b重疊，低電阻區域108f、108g與其端部比導電膜120b的端部的外側突出的導電膜120a重疊，低電阻區域108h、108i與其端部比導電膜120a的端部的外側突出的絕緣膜117重疊，低電阻區域108b、108c設置在絕緣膜117的外側。 Note that in the channel length direction, the channel region 108a overlaps the conductive film 120b, the low-resistance regions 108f, 108g and their ends overlap the conductive film 120a protruding outside the ends of the conductive film 120b, and the low-resistance regions 108h, 108i and their ends The portion overlaps the insulating film 117 protruding outside the end of the conductive film 120a, and the low resistance regions 108b and 108c are provided outside the insulating film 117.

如圖31E及圖32A和圖32B所示，氧化物半導體膜108藉由包括比低電阻區域108b、108c的雜質元素的濃度低且電阻率高的低電阻區域108f、108g、108h、108i，可以使汲極區域的電場弛豫。因此，可以降低起因於汲極區域的電場的電晶體的臨界電壓的變動等劣化。 As shown in FIG. 31E and FIGS. 32A and 32B, the oxide semiconductor film 108 includes low resistance regions 108f, 108g, 108h, and 108i that have a lower concentration of impurity elements than the low resistance regions 108b and 108c and high resistivity. The electric field in the drain region is relaxed. Therefore, it is possible to reduce the deterioration of the threshold voltage of the transistor caused by the electric field in the drain region and the like.

圖33A所示的電晶體包括包含通道區域108a及低電阻區域108b、108c的氧化物半導體膜108，低電阻區域108b、108c包括厚度小於通道區域108a的區域。典型的是，低電阻區域108b、108c包括與通道區域108a相比厚度小0.1nm以上且5nm以下的區域。 The transistor shown in FIG. 33A includes an oxide semiconductor film 108 including a channel region 108a and low resistance regions 108b and 108c. The low resistance regions 108b and 108c include a region having a thickness smaller than that of the channel region 108a. Typically, the low-resistance regions 108b and 108c include regions with a thickness of 0.1 nm or more and 5 nm or less compared to the channel region 108a.

在圖33B所示的電晶體中，與氧化物半導體膜108接觸的絕緣膜104、117之中的至少一個是多層結構。例如，絕緣膜104包括絕緣膜104a、與絕緣膜104a及氧化物半導體膜108接觸的絕緣膜104b。另外，絕緣膜117包括與氧化物半導體膜108接觸的絕緣膜117a以及與絕緣膜117a接觸的絕緣膜117b。 In the transistor shown in FIG. 33B, at least one of the insulating films 104, 117 in contact with the oxide semiconductor film 108 has a multilayer structure. For example, the insulating film 104 includes an insulating film 104a, and an insulating film 104b in contact with the insulating film 104a and the oxide semiconductor film 108. In addition, the insulating film 117 includes an insulating film 117a in contact with the oxide semiconductor film 108 and an insulating film 117b in contact with the insulating film 117a.

絕緣膜104b、117a可以使用氮氧化物少且缺陷態密度低的氧化物絕緣膜形成。氮氧化物少且缺陷態密 度低的氧化物絕緣膜具體是指位於真空能階的4.6eV以上且8eV以下的缺陷態密度較低的氧化物絕緣膜，換言之，起因於氮氧化物的缺陷態密度較低的氧化物絕緣膜。作為氮氧化物少且缺陷態密度低的氧化物絕緣膜，可以使用氮氧化物的釋放量少的氧氮化矽膜或氮氧化物的釋放量少的氧氮化鋁膜等。注意，絕緣膜104b、117a的平均膜厚為0.1nm以上且50nm以下，或者0.5nm以上且10nm以下。 The insulating films 104b and 117a can be formed using an oxide insulating film with little nitrogen oxide and a low density of defect states. The oxide insulating film with little nitrogen oxide and low defect state density refers specifically to an oxide insulating film with a low defect state density of 4.6eV or more and 8eV or less in the vacuum energy level, in other words, the defect state due to nitrogen oxide Low-density oxide insulating film. As the oxide insulating film with little oxynitride and low defect state density, a silicon oxynitride film with little oxynitride emission or an aluminum oxynitride film with little oxynitride emission can be used. Note that the average film thickness of the insulating films 104b and 117a is 0.1 nm or more and 50 nm or less, or 0.5 nm or more and 10 nm or less.

此外，在熱脫附譜分析法(TDS(Thermal Desorption Spectroscopy))中，氮氧化物的釋放量少的氧氮化矽膜是氨釋放量比氮氧化物的釋放量多的膜，典型的是氨釋放量為1×1018個/cm3以上且5×1019個/cm3以下。注意，氨的釋放量是藉由膜表面溫度為50℃以上且650℃以下，較佳為50℃以上且550℃以下的加熱處理而釋放的量。 In addition, in thermal desorption spectroscopy (TDS (Thermal Desorption Spectroscopy)), the silicon oxynitride film with a small amount of nitrogen oxide is a film with more ammonia released than nitrogen oxide. The ammonia emission amount is 1×10 18 pieces/cm 3 or more and 5×10 19 pieces/cm 3 or less. Note that the amount of ammonia released is the amount released by the heat treatment of the film surface temperature of 50°C or more and 650°C or less, preferably 50°C or more and 550°C or less.

絕緣膜104a、117b可以使用藉由加熱釋放氧的氧化物絕緣膜形成。注意，絕緣膜104a、117b的平均膜厚為5nm以上且1000nm以下，或10nm以上且500nm以下。 The insulating films 104a and 117b can be formed using an oxide insulating film that releases oxygen by heating. Note that the average film thickness of the insulating films 104a and 117b is 5 nm or more and 1000 nm or less, or 10 nm or more and 500 nm or less.

作為藉由加熱釋放氧的氧化物絕緣膜的代表例子，有氧氮化矽膜、氧氮化鋁膜等。 As representative examples of oxide insulating films that release oxygen by heating, there are a silicon oxynitride film, an aluminum oxynitride film, and the like.

以NO2或NO為代表的氮氧化物(NOx，x為0以上且2以下，較佳為1以上且2以下)在絕緣膜104及絕緣膜117等中形成能階。該能階形成在氧化物半導體膜 108的能隙中。因此，當氮氧化物擴散到絕緣膜104、117及氧化物半導體膜108之間的介面時，有時該能階在絕緣膜104、117一側俘獲電子。其結果是，被俘獲的電子停留在絕緣膜104、117及氧化物半導體膜108之間的介面附近，而導致電晶體的臨界電壓向正方向漂移。 Nitrogen oxides represented by NO 2 or NO (NO x , x is 0 or more and 2 or less, preferably 1 or more and 2 or less) form energy levels in the insulating film 104 and the insulating film 117 and the like. This energy level is formed in the energy gap of the oxide semiconductor film 108. Therefore, when the oxynitride diffuses to the interface between the insulating films 104 and 117 and the oxide semiconductor film 108, the energy level sometimes captures electrons on the insulating film 104 and 117 side. As a result, the trapped electrons stay near the interface between the insulating films 104 and 117 and the oxide semiconductor film 108, causing the critical voltage of the transistor to drift in the positive direction.

另外，氮氧化物在加熱處理中與氨及氧起反應。絕緣膜104a、117b所包含的氮氧化物在加熱處理中與絕緣膜104b、117a所包含的氨起反應，因此絕緣膜104a、117b所包含的氮氧化物被降低。因此，在絕緣膜104、117及氧化物半導體膜108的介面，電子不容易被俘獲。 In addition, nitrogen oxide reacts with ammonia and oxygen during heat treatment. The nitrogen oxides contained in the insulating films 104a and 117b react with the ammonia contained in the insulating films 104b and 117a during the heat treatment, so the nitrogen oxides contained in the insulating films 104a and 117b are reduced. Therefore, at the interface between the insulating films 104 and 117 and the oxide semiconductor film 108, electrons are not easily captured.

作為絕緣膜104b、117a，藉由使用氮氧化物少且缺陷態密度低的氧化物絕緣膜，能夠降低電晶體的臨界電壓的漂移，而可以降低電晶體的電特性的變動。 As the insulating films 104b and 117a, by using an oxide insulating film with little nitrogen oxide and a low density of defect states, the drift of the critical voltage of the transistor can be reduced, and the variation of the electrical characteristics of the transistor can be reduced.

藉由電晶體的製程的加熱處理(典型為300℃以上且低於基板應變點的加熱處理)，在對絕緣膜104b、117a利用100K以下的ESR進行測量而得到的質譜中，觀察到g值為2.037以上且2.039以下的第一信號、g值為2.001以上且2.003以下的第二信號以及g值為1.964以上且1.966以下的第三信號。在X帶的ESR測定中，第一信號與第二信號之間的分裂寬度(split width)及第二信號與第三信號之間的分裂寬度大約為5mT。另外，g值為2.037以上且2.039以下的第一信號、g值為2.001以上且2.003以下的第二信號以及g值為1.964以上且1.966以下 的第三信號的自旋密度的總計為小於1×1018spins/cm3，典型為1×1017spins/cm3以上且小於1×1018spins/cm3。 By heat treatment in the transistor manufacturing process (typically heat treatment at 300°C or higher and lower than the strain point of the substrate), g values were observed in the mass spectra obtained by measuring the insulating films 104b and 117a with ESR of 100K or less A first signal of 2.037 or more and 2.039 or less, a second signal having a g value of 2.001 or more and 2.003 or less, and a third signal having a g value of 1.964 or more and 1.966 or less. In the X-band ESR measurement, the split width between the first signal and the second signal and the split width between the second signal and the third signal are about 5 mT. In addition, the sum of the spin density of the first signal having a g value of 2.037 or more and 2.039 or less, the second signal having a g value of 2.001 or more and 2.003 or less, and the third signal having a g value of 1.964 or more and 1.966 or less is less than 1× 10 18 spins/cm 3 , typically 1×10 17 spins/cm 3 or more and less than 1×10 18 spins/cm 3 .

在100K以下的ESR譜中，g值為2.037以上且2.039以下的第一信號、g值為2.001以上且2.003以下的第二信號以及g值為1.964以上且1.966以下的第三信號相當於起因於二氧化氮的信號。換言之，g值為2.037以上且2.039以下的第一信號、g值為2.001以上且2.003以下的第二信號以及g值為1.964以上且1.966以下的第三信號的自旋密度的總計越低，氧化物絕緣膜所包含的氮氧化物的含量越少。 In the ESR spectrum below 100K, a first signal with a g value of 2.037 or more and 2.039 or less, a second signal with a g value of 2.001 or more and 2.003 or less, and a third signal with a g value of 1.964 or more and 1.966 or less correspond to the cause Nitrogen dioxide signal. In other words, the lower the total spin density of the first signal having a g value of 2.037 or more and 2.039, the second signal having a g value of 2.001 or more and 2.003, and the third signal having a g value of 1.964 or more and 1.966 or less, the oxidation The lower the content of nitrogen oxide contained in the insulating film.

另外，在電晶體的製程的加熱處理(典型為300℃以上且低於基板應變點的加熱處理)後，氮氧化物少且缺陷態密度低的氧化物絕緣膜藉由SIMS(Secondary Ion Mass Spectrometry)測定的氮濃度為6×1020atoms/cm3以下。 In addition, after the heat treatment of the transistor manufacturing process (typically a heat treatment of 300°C or higher and lower than the strain point of the substrate), the oxide insulating film with little nitrogen oxide and low defect state density is obtained by SIMS (Secondary Ion Mass Spectrometry ) The measured nitrogen concentration is 6×10 20 atoms/cm 3 or less.

藉由利用基板溫度為220℃以上、280℃以上或350℃以上並使用矽烷及一氧化二氮的電漿CVD法形成氮氧化物少且缺陷態密度低的氧化物絕緣膜，可以製造緻密且硬度高的膜。 By forming a plasma CVD method using a substrate temperature of 220° C. or higher, 280° C. or higher, or 350° C. or higher, using silane and nitrous oxide, an oxide insulating film with little nitrogen oxide and low defect density can be formed. High hardness film.

圖33C所示的電晶體包括：氧化物半導體膜108；絕緣膜117；以及導電膜120與絕緣膜126之間的絕緣膜141。絕緣膜141可以使用圖33B的絕緣膜104b、117a所示的氮氧化物少且缺陷態密度低的氧化物絕緣膜來形成。 The transistor shown in FIG. 33C includes: an oxide semiconductor film 108; an insulating film 117; and an insulating film 141 between the conductive film 120 and the insulating film 126. The insulating film 141 can be formed using an oxide insulating film having less nitrogen oxide and a lower density of defect states as shown in the insulating films 104b and 117a of FIG. 33B.

另外，在通道長度方向的剖面形狀中，通道區域108a與低電阻區域108b之間包括低電阻區域108f，通道區域108a與低電阻區域108c之間包括低電阻區域108g。與低電阻區域108b、108c相比，低電阻區域108f、108g的雜質元素的濃度較低且電阻率較高。注意，在此，低電阻區域108f、108g是重疊於與絕緣膜117及導電膜120的側面接觸的絕緣膜141的區域。另外，低電阻區域108f、108g也可以與絕緣膜126及絕緣膜141重疊。 In addition, in the cross-sectional shape of the channel length direction, the channel region 108a and the low resistance region 108b include a low resistance region 108f, and the channel region 108a and the low resistance region 108c include a low resistance region 108g. Compared with the low-resistance regions 108b and 108c, the low-resistance regions 108f and 108g have a lower impurity element concentration and a higher resistivity. Note that here, the low-resistance regions 108f and 108g are regions overlapping the insulating film 141 in contact with the side surfaces of the insulating film 117 and the conductive film 120. In addition, the low resistance regions 108f and 108g may overlap the insulating film 126 and the insulating film 141.

在圖33D所示的電晶體中，絕緣膜117與氧化物半導體膜108的通道區域108a接觸，並且與低電阻區域108b、108c接觸。另外，在絕緣膜117中，與接觸於通道區域108a的區域相比，接觸於低電阻區域108b、108c的區域的膜厚較薄，典型的是，平均膜厚為0.1nm以上且50nm以下，或0.5nm以上且10nm以下。其結果是，能夠透過絕緣膜117對氧化物半導體膜108添加雜質元素，並且能夠透過絕緣膜117將絕緣膜126所包含的氫移動到氧化物半導體膜108。其結果是，可以形成低電阻區域108b、108c。 In the transistor shown in FIG. 33D, the insulating film 117 is in contact with the channel region 108a of the oxide semiconductor film 108, and is in contact with the low-resistance regions 108b, 108c. In addition, in the insulating film 117, the regions in contact with the low-resistance regions 108b and 108c are thinner than the regions in contact with the channel region 108a. Typically, the average film thickness is 0.1 nm or more and 50 nm or less. Or 0.5nm or more and 10nm or less. As a result, an impurity element can be added to the oxide semiconductor film 108 through the insulating film 117, and the hydrogen contained in the insulating film 126 can be moved to the oxide semiconductor film 108 through the insulating film 117. As a result, low resistance regions 108b and 108c can be formed.

再者，將絕緣膜104形成為絕緣膜104a、104b的多層結構，使用藉由加熱釋放氧的氧化物絕緣膜形成絕緣膜104a，使用氮氧化物少且缺陷態密度低的氧化物絕緣膜形成絕緣膜104b。再者，使用氮氧化物少且缺陷態密度低的氧化物絕緣膜形成絕緣膜117。也就是 說，可以由氮氧化物少且缺陷態密度低的氧化物絕緣膜覆蓋氧化物半導體膜108。其結果是，藉由加熱處理將絕緣膜104a所包含的氧移動到氧化物半導體膜108中，可以降低氧化物半導體膜108的通道區域108a所包含的氧缺陷，並且降低絕緣膜104b、117與氧化物半導體膜108的介面的載子的陷阱。其結果是，能夠降低電晶體的臨界電壓的漂移，並降低電晶體的電特性的變動。 In addition, the insulating film 104 is formed into a multilayer structure of insulating films 104a, 104b, an insulating film 104a is formed using an oxide insulating film that releases oxygen by heating, and an oxide insulating film that has little nitrogen oxide and a low defect state density is formed The insulating film 104b. Furthermore, the insulating film 117 is formed using an oxide insulating film with little nitrogen oxide and a low defect state density. That is, the oxide semiconductor film 108 may be covered with an oxide insulating film having little nitrogen oxide and a low defect state density. As a result, by moving the oxygen contained in the insulating film 104a to the oxide semiconductor film 108 by heat treatment, the oxygen defects contained in the channel region 108a of the oxide semiconductor film 108 can be reduced, and the insulating films 104b, 117 and The trap of the carrier of the oxide semiconductor film 108. As a result, it is possible to reduce the drift of the critical voltage of the transistor and reduce the variation of the electrical characteristics of the transistor.

實施方式4 Embodiment 4

在此，使用圖34A及圖34B說明在絕緣膜上形成抑制氧脫離的膜之後透過該膜對絕緣膜添加氧的方法。 Here, a method of adding oxygen to the insulating film through the film after forming a film that suppresses oxygen detachment on the insulating film will be described using FIGS. 34A and 34B.

如圖34A所示，在基板101上形成絕緣膜104。 As shown in FIG. 34A, an insulating film 104 is formed on the substrate 101.

接著，在絕緣膜104上形成抑制氧脫離的膜145d。接著，透過膜145d對絕緣膜104添加氧146d。 Next, a film 145d that suppresses oxygen detachment is formed on the insulating film 104. Next, oxygen 146d is added to the insulating film 104 through the film 145d.

作為抑制氧脫離的膜145d，使用如下具有導電性的材料來形成：選自鋁、鉻、鉭、鈦、鉬、鎳、鐵、鈷、鎢的金屬元素；以上述金屬元素為成分的合金；組合上述金屬元素的合金；包括上述金屬元素的金屬氮化物；包括上述金屬元素的金屬氧化物；以及包括上述金屬元素的金屬氮氧化物等。 As the film 145d for suppressing oxygen detachment, it is formed using a material having conductivity as follows: a metal element selected from aluminum, chromium, tantalum, titanium, molybdenum, nickel, iron, cobalt, and tungsten; an alloy containing the above metal element as a component; An alloy combining the above metal elements; a metal nitride including the above metal element; a metal oxide including the above metal element; and a metal oxynitride including the above metal element, etc.

抑制氧脫離的膜145d的厚度可以是1nm以上且20nm以下，或2nm以上且10nm以下。 The thickness of the film 145d that suppresses oxygen detachment may be 1 nm or more and 20 nm or less, or 2 nm or more and 10 nm or less.

作為透過膜145d對絕緣膜104添加氧146d 的方法，有離子摻雜法、離子植入法、電漿處理法等。注意，藉由使膜145d暴露在對基板101一側施加偏壓的狀態下發生的電漿，能夠增加對絕緣膜104的氧的添加量，所以是較佳的。作為進行這種電漿處理的裝置的一個例子，有灰化裝置。 As a method of adding oxygen 146d to the insulating film 104 through the transmission film 145d, there are an ion doping method, an ion implantation method, a plasma treatment method, and the like. Note that by exposing the film 145d to the plasma generated in the state where the bias is applied to the substrate 101 side, the amount of oxygen added to the insulating film 104 can be increased, so it is preferable. As an example of an apparatus for performing such plasma treatment, there is an ashing apparatus.

藉由在絕緣膜104上設置膜145d並對其添加氧，膜145d被用作抑制氧從絕緣膜104脫離的保護膜。因此，可以對絕緣膜104添加更多的氧。 By providing the film 145d on the insulating film 104 and adding oxygen thereto, the film 145d is used as a protective film that suppresses the oxygen from escaping from the insulating film 104. Therefore, more oxygen can be added to the insulating film 104.

另外，當以電漿處理進行氧的引入時，藉由使用微波激發氧，產生高密度的氧電漿，可以增加對絕緣膜104引入氧的量。 In addition, when introducing oxygen by plasma treatment, by exciting oxygen using microwaves to generate high-density oxygen plasma, the amount of oxygen introduced into the insulating film 104 can be increased.

然後，藉由去除膜145d，如圖34B所示，可以在基板101上形成添加有氧的絕緣膜104。 Then, by removing the film 145d, as shown in FIG. 34B, an insulating film 104 added with oxygen can be formed on the substrate 101.

實施方式5 Embodiment 5

在本實施方式中，說明形成在氧化物半導體膜的低電阻區域的VOH。 In this embodiment mode, V O H formed in the low resistance region of the oxide semiconductor film will be described.

〈(1)V OH的易形成性以及穩定性〉 <(1) V O H easy formation and stability>

當氧化物半導體膜(以下，稱為IGZO)為完整結晶時，在室溫下H優先地沿著ab面擴散。在進行450℃的加熱處理時H分別擴散在ab面及c軸方向上。於是，計算是否當在IGZO中存在氧缺陷VO時H容易進入氧缺陷VO中。在此，將在氧缺陷VO中存在H的狀態稱為VOH。 When the oxide semiconductor film (hereinafter referred to as IGZO) is a complete crystal, H preferentially diffuses along the ab plane at room temperature. During the heat treatment at 450°C, H diffuses in the ab plane and the c-axis direction, respectively. Then, it is calculated whether H easily enters the oxygen defect V O when the oxygen defect V O exists in the IGZO. Here, the state where H exists in the oxygen defect V O is referred to as V O H.

在計算中，使用圖35所示的InGaZnO4的結晶模型。在此，利用NEB(Nudged Elastic Band：微動彈性帶)法對VOH中的H從VO被釋放與氧鍵合的反應路徑的活化能(Ea)進行計算。表1示出計算條件。 In the calculation, the crystal model of InGaZnO 4 shown in FIG. 35 was used. Here, the activation energy (E a ) of the reaction path in which H in V O H is released from V O and bonded to oxygen is calculated using the NEB (Nudged Elastic Band) method. Table 1 shows the calculation conditions.

Figure 108104981-A0101-12-0098-1
Figure 108104981-A0101-12-0098-1

在InGaZnO4的結晶模型中，如圖35所示，有與氧鍵合的金屬元素及該元素個數不同的氧位置1至氧位置4。在此，對容易形成氧缺陷VO的氧位置1及氧位置2進行計算。 In the crystal model of InGaZnO 4 , as shown in FIG. 35, there are a metal element bonded to oxygen and an oxygen position 1 to an oxygen position 4 with different numbers of the elements. Here, the oxygen position 1 and the oxygen position 2 where oxygen defects V O are easily formed are calculated.

首先，作為容易形成氧缺陷VO的氧位置1，對與三個In原子及一個Zn原子鍵合的氧位置進行計算。 First, as the oxygen position 1 where oxygen defects V O are easily formed, the oxygen positions bonded to three In atoms and one Zn atom are calculated.

圖36A示出初始狀態的模型，圖36B示出最終狀態的模型。另外，圖37示出在初始狀態及最終狀態下算出的的活化能(Ea)。注意，在此“初始狀態”是指在氧缺陷VO中存在H的狀態(VOH)，而“最終狀態”是指如下 結構：具有氧缺陷VO及鍵合於一個Ga原子及兩個Zn原子的氧與H鍵合的狀態(H-O)。 FIG. 36A shows the model in the initial state, and FIG. 36B shows the model in the final state. In addition, FIG. 37 shows the activation energy (E a ) calculated in the initial state and the final state. Note that the "initial state" here refers to the state where H exists in the oxygen defect V O (V O H), and the "final state" refers to the following structure: having the oxygen defect V O and bonded to one Ga atom and two The state in which oxygen of one Zn atom is bound to H (HO).

從計算的結果可知，當氧缺陷VO中的H與其他O原子鍵合時需要大約為1.52eV的能量，而當鍵合於O的H進入氧缺陷VO時需要大約為0.46eV的能量。 It can be seen from the calculation results that when the H in the oxygen defect V O is bonded to other O atoms, it requires about 1.52 eV of energy, and when the H bonded to the O enters the oxygen defect V O , it needs about 0.46 eV of energy. .

在此，根據藉由計算獲得的活化能(Ea)和算式1，計算出反應頻率(Γ)。在算式1中，kB表示波茲曼常數，T表示絕對溫度。 Here, the reaction frequency (Γ) is calculated based on the activation energy (E a ) obtained by calculation and Equation 1. In Equation 1, k B represents the Bozeman constant, and T represents the absolute temperature.

Figure 108104981-A0101-12-0099-2
Figure 108104981-A0101-12-0099-2

假設頻率因數v=1013[1/sec]，計算出350℃時的反應頻率。H從圖36A所示的模型中的位置移到圖36B所示的模型中的位置的頻率為5.52×100[1/sec]。此外，H從圖36B所示的模型中的位置移到圖36A所示的模型中的位置的頻率為1.82×109[1/sec]。由此可知，擴散在IGZO中的H在其附近有氧缺陷VO時容易形成VOH，一旦形成VOH就不容易從氧缺陷VO釋放H。 Assuming a frequency factor v=10 13 [1/sec], calculate the response frequency at 350°C. The frequency at which H moves from the position in the model shown in FIG. 36A to the position in the model shown in FIG. 36B is 5.52×10 0 [1/sec]. In addition, the frequency at which H moves from the position in the model shown in FIG. 36B to the position in the model shown in FIG. 36A is 1.82×10 9 [1/sec]. From this, it can be seen that H diffused in IGZO easily forms V O H when there is an oxygen defect V O in its vicinity, and it is not easy to release H from the oxygen defect V O once V O H is formed.

接著，作為容易形成氧缺陷VO的氧位置2，對與一個Ga原子及兩個Zn原子鍵合的氧位置進行計算。 Next, as the oxygen position 2 where oxygen defects V O are easily formed, the oxygen position bonded to one Ga atom and two Zn atoms is calculated.

圖38A示出初始狀態的模型，圖38B示出最終狀態的模型。另外，圖39示出在初始狀態及最終狀態下算出的活化能(Ea)。注意，在此“初始狀態”是指在氧缺 陷VO中存在H的狀態(VOH)，而“最終狀態”是指如下結構：具有氧缺陷VO及鍵合於一個Ga原子及兩個Zn原子的氧與H鍵合的狀態(H-O)。 FIG. 38A shows the model in the initial state, and FIG. 38B shows the model in the final state. In addition, FIG. 39 shows the activation energy (E a ) calculated in the initial state and the final state. Note that the "initial state" here refers to the state where H exists in the oxygen defect V O (V O H), and the "final state" refers to the following structure: having the oxygen defect V O and bonded to one Ga atom and two The state in which oxygen of one Zn atom is bound to H (HO).

從計算的結果可知，當氧缺陷VO中的H與其他O原子鍵合時需要大約為1.75eV的能量，而當鍵合於O的H進入氧缺陷VO時需要大約為0.35eV的能量。 It can be seen from the calculation results that when the H in the oxygen defect V O is bonded to other O atoms, it needs about 1.75 eV of energy, and when the H bonded to the O enters the oxygen defect V O , it needs about 0.35 eV of energy. .

根據藉由計算獲得的活化能(Ea)和上述算式1，計算出反應頻率(Γ)。 Based on the activation energy (E a ) obtained by calculation and the above formula 1, the reaction frequency (Γ) is calculated.

假設頻率因數v=1013[1/sec]，計算出350℃時的反應頻率。H從圖38A所示的模型中的位置移到圖38B所示的模型中的位置的頻率為7.53×10-2[1/sec]。此外，H從圖38B所示的模型中的位置移到圖38A所示的模型中的位置的頻率為1.44×1010[1/sec]。由此可知，一旦形成VOH就不容易從氧缺陷VO釋放H。 Assuming a frequency factor v=10 13 [1/sec], calculate the response frequency at 350°C. The frequency at which H moves from the position in the model shown in FIG. 38A to the position in the model shown in FIG. 38B is 7.53×10 -2 [1/sec]. In addition, the frequency at which H moves from the position in the model shown in FIG. 38B to the position in the model shown in FIG. 38A is 1.44×10 10 [1/sec]. This shows that once V O H is formed, it is not easy to release H from the oxygen defect V O.

由上述結果可知，當進行退火時IGZO中的H容易擴散，當具有氧缺陷VO時H容易進入氧缺陷VO而成為VOH。 From the above results, it is known that H in IGZO is easily diffused when annealing is performed, and when oxygen deficiency V O is present, H easily enters oxygen defect V O and becomes V O H.

〈(2)V OH的遷移能階〉 <(2) V O H migration energy level>

當在IGZO中存在氧缺陷VO及H時，根據〈(1)VOH的易形成性以及穩定性〉所示的利用NEB法的計算，可以認為氧缺陷VO與H容易形成VOH，並且VOH穩定。於是，為了調查VOH是否與載子陷阱有關係，計算出VOH的遷移能階。 When oxygen defects V O and H exist in IGZO, according to the calculation using the NEB method shown in ((1) V O H Ease of Formation and Stability), it can be considered that oxygen defects V O and H easily form V O H, and V O H is stable. Therefore, in order to investigate whether V O H is related to the carrier trap, the migration level of V O H is calculated.

在計算中，使用InGaZnO4的結晶模型(112原子)。在此，製造圖35所示的氧位置1及氧位置2的VOH的模型來計算出遷移能階。表2示出計算條件。 In the calculation, the crystal model of InGaZnO 4 (112 atoms) was used. Here, the V O H models of the oxygen position 1 and the oxygen position 2 shown in FIG. 35 are manufactured to calculate the migration level. Table 2 shows the calculation conditions.

Figure 108104981-A0101-12-0101-3
Figure 108104981-A0101-12-0101-3

以形成接近實驗值的能隙的方式調整交換項的混合比，沒有缺陷的InGaZnO4的結晶模型的能隙變為3.08eV，該結果接近實驗值3.15eV。 By adjusting the mixing ratio of the exchange terms so as to form an energy gap close to the experimental value, the energy gap of the crystal model of InGaZnO 4 without defects becomes 3.08 eV, which is close to the experimental value of 3.15 eV.

根據下面算式2計算出具有缺陷D的模型的遷移能階(ε(q/q'))。此外，△E(Dq)為缺陷D的電荷q的形成能量，根據下面算式3計算出該能量。 The migration energy level (ε(q/q ' )) of the model with defect D is calculated according to the following Equation 2. In addition, ΔE(D q ) is the formation energy of the charge q of the defect D, and this energy is calculated according to the following Equation 3.

Figure 108104981-A0101-12-0101-4
Figure 108104981-A0101-12-0101-4

Figure 108104981-A0101-12-0102-5
Figure 108104981-A0101-12-0102-5

在算式2及算式3中，Etot(Dq)表示包含缺陷D的模型的電荷q的總能量，Etot(bulk)表示沒有缺陷的模型(完整結晶)的總能量，△ni表示起因於缺陷的原子i的增減數，μi表示原子i的化學勢，εVBM表示沒有缺陷的模型中的價帶頂的能量，△Vq表示與靜電勢有關的修正項，EF表示費米能量。 In Equation 2 and Equation 3, E tot (D q ) represents the total energy of the charge q of the model including the defect D, E tot (bulk) represents the total energy of the model without defects (complete crystal), and △n i represents the cause Due to the increase or decrease of the defective atom i, μ i represents the chemical potential of atom i, ε VBM represents the energy of the valence band top in the model without defects, △V q represents the correction term related to the electrostatic potential, and EF represents the fee Meter energy.

圖40示出根據上述算式計算出的VOH的遷移能階。圖40中的數值表示離導帶底的深度。由圖40可知，氧位置1的VOH的遷移能階存在於導帶底下0.05eV處，氧位置2的VOH的遷移能階存在於導帶底下0.11eV處，由此各VOH與電子陷阱有關係。就是說，可知VOH被用作施體。也可知包含VOH的IGZO具有導電性。 FIG. 40 shows the V O H migration level calculated according to the above formula. The numerical value in Fig. 40 indicates the depth from the bottom of the conduction band. As can be seen from FIG. 40, the migration level of V O H at oxygen position 1 exists at 0.05 eV below the conduction band, and the migration level of V O H at oxygen position 2 exists at 0.11 eV below the conduction band, so that each V O H is related to the electron trap. That is, it can be seen that V O H is used as a donor. It is also known that IGZO including V O H has conductivity.

〈氧化物導電體膜〉 <oxide conductor film>

下面，參照圖48說明具有VOH的氧化物導電體膜的電阻率的溫度依存性。 Next, the temperature dependence of the resistivity of the oxide conductor film having V O H will be described with reference to FIG. 48.

在此，製造具有氧化物導電體膜的樣本。作為氧化物導電體膜，製造如下氧化物導電體膜：氧化物半導體膜與氮化矽膜接觸而成的氧化物導電體膜(OC_SiNx)；在摻雜裝置中將氬添加到氧化物半導體膜且與氮化矽膜接觸而成的氧化物導電體膜(OC_Ar dope+SiNx)；在電漿處理裝置中使氧化物半導體膜暴露於 氬電漿且與氮化矽膜接觸而形成的氧化物導電體膜(OC_Ar plasma+SiNx)。另外，氮化矽膜包含氫。 Here, a sample with an oxide conductor film is manufactured. As the oxide conductor film, the following oxide conductor film is manufactured: an oxide conductor film (OC_SiN x ) in which an oxide semiconductor film is in contact with a silicon nitride film; argon is added to the oxide semiconductor in a doping device Oxide conductor film (OC_Ar dope+SiN x ) formed by the film and contact with the silicon nitride film; formed by exposing the oxide semiconductor film to the argon plasma and contacting the silicon nitride film in the plasma processing device Oxide conductor film (OC_Ar plasma+SiN x ). In addition, the silicon nitride film contains hydrogen.

下面說明包含氧化物導電體膜(OC_SiNx)的樣本的製造方法。在藉由電漿CVD法將400nm厚的氧氮化矽膜形成在玻璃基板上之後，將氧氮化矽膜暴露於氧電漿，然後對氧氮化矽膜添加氧離子，來形成由於加熱而釋放氧的氧氮化矽膜。接著，藉由使用原子個數比為In：Ga：Zn=1：1：1.2的濺射靶材的濺射法在由於加熱而釋放氧的氧氮化矽膜上形成100nm厚的In-Ga-Zn氧化物膜，在450℃的氮氛圍下對該氧化物膜進行加熱處理，然後在450℃的氮及氧的混合氣體氛圍下進行加熱處理。然後，藉由電漿CVD法形成100nm厚的氮化矽膜。然後，在350℃的氮及氧的混合氣體氛圍下進行加熱處理。 Next, a method for manufacturing a sample containing an oxide conductor film (OC_SiN x ) will be described. After forming a 400 nm thick silicon oxynitride film on the glass substrate by plasma CVD method, the silicon oxynitride film is exposed to the oxygen plasma, and then oxygen ions are added to the silicon oxynitride film to form due to heating The silicon oxynitride film that releases oxygen. Next, a 100-nm-thick In-Ga was formed on the silicon oxynitride film that released oxygen by heating by a sputtering method using a sputtering target with an atomic ratio of In:Ga:Zn=1:1:1:1.2 -A Zn oxide film, which is heat-treated in a nitrogen atmosphere at 450°C, and then heat-treated in a mixed gas atmosphere of nitrogen and oxygen at 450°C. Then, a 100-nm-thick silicon nitride film is formed by the plasma CVD method. Then, heat treatment is performed in a mixed gas atmosphere of nitrogen and oxygen at 350°C.

下面說明包含氧化物導電體膜(OC_Ar dope+SiNx)的樣本的製造方法。在藉由電漿CVD法將400nm厚的氧氮化矽膜形成在玻璃基板上之後，將氧氮化矽膜暴露於氧電漿，然後對氧氮化矽膜添加氧離子，來形成由於加熱而釋放氧的氧氮化矽膜。接著，藉由使用原子個數比為In：Ga：Zn=1：1：1.2的濺射靶材的濺射法在由於加熱而釋放氧的氧氮化矽膜上形成100nm厚的In-Ga-Zn氧化物膜，在450℃的氮氛圍下對該氧化物膜進行加熱處理，然後在450℃的氮及氧的混合氣體氛圍下進行加熱處理。接著，利用摻雜裝置以10kV的加速電壓對In-Ga-Zn氧化物膜添加劑量為5×1014/cm2的氬，來在In-Ga- Zn氧化物膜中形成氧缺陷。然後，藉由電漿CVD法形成100nm厚的氮化矽膜。然後，在350℃的氮及氧的混合氣體氛圍下進行加熱處理。 Next, a method of manufacturing a sample containing an oxide conductor film (OC_Ar dope+SiN x ) will be described. After forming a 400 nm thick silicon oxynitride film on the glass substrate by plasma CVD method, the silicon oxynitride film is exposed to the oxygen plasma, and then oxygen ions are added to the silicon oxynitride film to form due to heating The silicon oxynitride film that releases oxygen. Next, a 100-nm-thick In-Ga was formed on the silicon oxynitride film that released oxygen by heating by a sputtering method using a sputtering target with an atomic ratio of In:Ga:Zn=1:1:1:1.2 -A Zn oxide film, which is heat-treated in a nitrogen atmosphere at 450°C, and then heat-treated in a mixed gas atmosphere of nitrogen and oxygen at 450°C. Next, argon at a dose of 5×10 14 /cm 2 was added to the In-Ga-Zn oxide film with an acceleration voltage of 10 kV using a doping device to form oxygen defects in the In-Ga-Zn oxide film. Then, a 100-nm-thick silicon nitride film is formed by the plasma CVD method. Then, heat treatment is performed in a mixed gas atmosphere of nitrogen and oxygen at 350°C.

下面說明包含氧化物導電體膜(OC_Ar plasma+SiNx)的樣本的製造方法。在藉由電漿CVD法將400nm厚的氧氮化矽膜形成在玻璃基板上之後，將氧氮化矽膜暴露於氧電漿，來形成由於加熱而釋放氧的氧氮化矽膜。接著，藉由使用原子個數比為In：Ga：Zn=1：1：1.2的濺射靶材的濺射法在由於加熱而釋放氧的氧氮化矽膜上形成100nm厚的In-Ga-Zn氧化物膜，在450℃的氮氛圍下對該氧化物膜進行加熱處理，然後在450℃的氮及氧的混合氣體氛圍下進行加熱處理。接著，在電漿處理裝置中產生氬電漿，使加速了的氬離子碰撞到In-Ga-Zn氧化物膜，來形成氧缺陷。然後，藉由電漿CVD法形成100nm厚的氮化矽膜。然後，在350℃的氮及氧的混合氣體氛圍下進行加熱處理。 Next, a method of manufacturing a sample containing an oxide conductor film (OC_Ar plasma+SiN x ) will be described. After a 400-nm-thick silicon oxynitride film was formed on the glass substrate by the plasma CVD method, the silicon oxynitride film was exposed to an oxygen plasma to form a silicon oxynitride film that released oxygen due to heating. Next, a 100-nm-thick In-Ga was formed on the silicon oxynitride film that released oxygen by heating by a sputtering method using a sputtering target with an atomic ratio of In:Ga:Zn=1:1:1:1.2 -A Zn oxide film, which is heat-treated in a nitrogen atmosphere at 450°C, and then heat-treated in a mixed gas atmosphere of nitrogen and oxygen at 450°C. Next, argon plasma is generated in the plasma processing apparatus, and accelerated argon ions collide with the In-Ga-Zn oxide film to form oxygen defects. Then, a 100-nm-thick silicon nitride film is formed by the plasma CVD method. Then, heat treatment is performed in a mixed gas atmosphere of nitrogen and oxygen at 350°C.

圖48示出測定各樣本的電阻率的結果。在此，利用四端子的四點探針法(van-der-Pauw法)測定電阻率。在圖48中，橫軸表示測定溫度，縱軸表示電阻率。另外，四角形示出氧化物導電體膜(OC_SiNx)的測定結果，圓圈示出氧化物導電體膜(OC_Ar dope+SiNx)的測定結果，三角形示出氧化物半導體膜(OC_Ar plasma+SiNx)的測定結果。 FIG. 48 shows the results of measuring the resistivity of each sample. Here, the resistivity was measured by a four-terminal four-point probe method (van-der-Pauw method). In FIG. 48, the horizontal axis represents the measured temperature, and the vertical axis represents the resistivity. In addition, the square shows the measurement result of the oxide conductor film (OC_SiN x ), the circle shows the measurement result of the oxide conductor film (OC_Ar dope+SiN x ), and the triangle shows the oxide semiconductor film (OC_Ar plasma+SiN x ) Measurement results.

注意，在圖式中未圖示，但是不與氮化矽膜 接觸的氧化物半導體膜的電阻率高，很難測定出其電阻率。由此可知，氧化物導電體膜的電阻率比氧化物半導體膜低。 Note that although not shown in the drawings, the oxide semiconductor film that is not in contact with the silicon nitride film has a high resistivity, and it is difficult to measure the resistivity. This shows that the resistivity of the oxide conductor film is lower than that of the oxide semiconductor film.

從圖48可知，當氧化物導電體膜(OC_Ar dope+SiNx)及氧化物導電體膜(OC_Ar plasma+SiNx)包含氧缺陷及氫時，電阻率的變動小。典型的是，在80K以上且290K以下的範圍中，電阻率的變動率為小於±20%。或者，在150K以上且250K以下的範圍中，電阻率的變動率為小於±10%。也就是說，氧化物導電體是簡併半導體，可以推測其導帶邊緣與費米能階一致或大致一致。由此，藉由將氧化物導電體膜用作電晶體的源極區域及汲極區域，可以使氧化物導電體膜與用作電晶體的源極電極及汲極電極的導電膜處於歐姆接觸，從而可以在氧化物導電體膜與用作電晶體的源極電極及汲極電極的導電膜之間降低接觸電阻。此外，由於氧化物導電體的電阻率不太依賴於溫度，所以在氧化物導電體膜與用作電晶體的源極電極及汲極電極的導電膜之間接觸電阻的變動量小，由此可以製造可靠性高的電晶體。 As can be seen from FIG. 48, when the oxide conductor film (OC_Ar dope+SiN x ) and the oxide conductor film (OC_Ar plasma+SiN x ) contain oxygen defects and hydrogen, the change in resistivity is small. Typically, in the range of 80K or more and 290K or less, the rate of change of resistivity is less than ±20%. Alternatively, in the range of 150K or more and 250K or less, the rate of change of resistivity is less than ±10%. That is to say, the oxide conductor is a degenerate semiconductor, and it can be speculated that its conduction band edge is consistent or roughly consistent with the Fermi energy level. Thus, by using the oxide conductor film as the source region and the drain region of the transistor, the oxide conductor film can be brought into ohmic contact with the conductive film serving as the source electrode and the drain electrode of the transistor Therefore, the contact resistance can be reduced between the oxide conductor film and the conductive films used as the source electrode and the drain electrode of the transistor. In addition, since the resistivity of the oxide conductor is not very temperature-dependent, the amount of change in contact resistance between the oxide conductor film and the conductive film used as the source electrode and the drain electrode of the transistor is small, thereby Transistors with high reliability can be manufactured.

實施方式6 Embodiment 6

在本實施方式中，對本發明的一個方式的半導體裝置所包括的氧化物半導體膜的結構進行詳細的說明。 In this embodiment, the structure of the oxide semiconductor film included in the semiconductor device of one embodiment of the present invention will be described in detail.

在本說明書中，“平行”是指兩條直線形成的角度為-10°以上且10°以下的狀態。因此，也包括該角度 為-5°以上且5°以下的狀態。另外，“大致平行”是指兩條直線形成的角度為-30°以上且30°以下的情況。另外，“垂直”是指兩條直線的角度為80°以上且100°以下的狀態。因此，也包括該角度為85°以上且95°以下的狀態。“大致垂直”是指兩條直線形成的角度為60°以上且120°以下的狀態。 In this specification, "parallel" refers to a state where the angle formed by two straight lines is -10° or more and 10° or less. Therefore, the state where the angle is -5° or more and 5° or less is also included. In addition, "substantially parallel" refers to a case where the angle formed by two straight lines is -30° or more and 30° or less. In addition, "vertical" refers to a state where the angle of two straight lines is 80° or more and 100° or less. Therefore, the state where the angle is 85° or more and 95° or less is also included. "Almost perpendicular" refers to a state where the angle formed by two straight lines is 60° or more and 120° or less.

在本說明書中，六方晶系包括三方晶系和菱方晶系。 In this specification, the hexagonal crystal system includes a trigonal crystal system and a rhombohedral crystal system.

〈氧化物半導體的結構〉 <Structure of oxide semiconductor>

下面說明氧化物半導體的結構。 The structure of the oxide semiconductor will be described below.

氧化物半導體被分為單晶氧化物半導體和非單晶氧化物半導體。作為非單晶氧化物半導體有CAAC-OS、多晶氧化物半導體、nc-OS(nanocrystalline Oxide 5emiconductor)、a-like OS(amorphous-like Oxide Semiconductor)、非晶氧化物半導體等。 Oxide semiconductors are classified into single crystal oxide semiconductors and non-single crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include CAAC-OS, polycrystalline oxide semiconductors, nc-OS (nanocrystalline Oxide 5emiconductor), a-like OS (amorphous-like Oxide Semiconductor), and amorphous oxide semiconductors.

從其他觀點看來，氧化物半導體被分為非晶氧化物半導體和結晶氧化物半導體。作為結晶氧化物半導體有單晶氧化物半導體、CAAC-OS、多晶氧化物半導體以及nc-OS等。 From other viewpoints, oxide semiconductors are classified into amorphous oxide semiconductors and crystalline oxide semiconductors. Examples of crystalline oxide semiconductors include single crystal oxide semiconductors, CAAC-OS, polycrystalline oxide semiconductors, and nc-OS.

已知，非晶結構一般被定義為處於介穩狀態並沒有固定化，並且為各向同性且不具有非均勻結構等。另外，也可以說是鍵角可靈活地改變且具有短程有序而不具有長程有序的結構。 It is known that an amorphous structure is generally defined as being in a metastable state and not fixed, and being isotropic and not having a non-uniform structure or the like. In addition, it can also be said that the bond angle can be flexibly changed and has a short-range order rather than a long-range order.

從相反的角度來看，不能將本質上穩定的氧化物半導體稱為完全是非晶(completely amorphous)的氧化物半導體。另外，不能將不是等方性(例如，在微小區域中具有週期性結構)的氧化物半導體稱為完全是非晶的氧化物半導體。注意，a-like OS在微小區域中具有週期性結構，但同時具有空洞(void)，所以是不穩定的結構。因此，a-like OS在物性上接近於非晶氧化物半導體。 From the opposite perspective, an oxide semiconductor that is essentially stable cannot be called a completely amorphous oxide semiconductor. In addition, an oxide semiconductor that is not isotropic (for example, has a periodic structure in a minute region) cannot be called an oxide semiconductor that is completely amorphous. Note that a-like OS has a periodic structure in a micro area, but also has a void, so it is an unstable structure. Therefore, a-like OS is close to an amorphous oxide semiconductor in physical properties.

〈CAAC-OS〉 <CAAC-OS>

首先，對CAAC-OS進行說明。 First, the CAAC-OS will be described.

CAAC-OS是包含多個c軸配向的結晶部(也稱為顆粒)的氧化物半導體之一。 CAAC-OS is one of oxide semiconductors including a plurality of c-axis aligned crystal parts (also called particles).

在利用穿透式電子顯微鏡(TEM：Transmission Electron Microscope)觀察所得到的CAAC-OS的明視野影像與繞射圖案的複合分析影像(也稱為高解析度TEM影像)中，觀察到多個顆粒。然而，在高解析度TEM影像中，觀察不到顆粒與顆粒之間的明確的邊界，即晶界(grain boundary)。因此，可以說在CAAC-OS中，不容易發生起因於晶界的電子移動率的降低。 In the composite analysis image (also referred to as high-resolution TEM image) of the bright field image of the CAAC-OS obtained by observation with a transmission electron microscope (TEM: Transmission Electron Microscope) and a diffraction pattern (also referred to as a high-resolution TEM image), multiple particles were observed . However, in high-resolution TEM images, no clear boundary between the particles, namely the grain boundary, is observed. Therefore, it can be said that in CAAC-OS, a decrease in the electron mobility due to the grain boundary is unlikely to occur.

下面，對利用TEM觀察的CAAC-OS進行說明。圖49A示出從大致平行於樣本面的方向觀察所得到的CAAC-OS的剖面的高解析度TEM影像。利用球面像差校正(Spherical Aberration Corrector)功能得到高解析度TEM影像。將利用球面像差校正功能所得到的高解析度TEM 影像特別稱為Cs校正高解析度TEM影像。例如可以使用日本電子株式會社製造的原子解析度分析型電子顯微鏡JEM-ARM200F等得到Cs校正高解析度TEM影像。 Next, the CAAC-OS observed by TEM will be described. FIG. 49A shows a high-resolution TEM image of the cross section of the CAAC-OS obtained when viewed from a direction substantially parallel to the sample plane. Use the Spherical Aberration Corrector function to obtain high-resolution TEM images. The high-resolution TEM image obtained by the spherical aberration correction function is particularly called a Cs corrected high-resolution TEM image. For example, an atomic resolution analysis electron microscope JEM-ARM200F manufactured by JEOL Ltd. can be used to obtain a Cs corrected high-resolution TEM image.

圖49B示出將圖49A中的區域(1)放大的Cs校正高解析度TEM影像。由圖49B可以確認到在顆粒中金屬原子排列為層狀。各金屬原子層具有反映了形成CAAC-OS膜的面(也稱為被形成面)或CAAC-OS膜的頂面的凸凹的配置並以平行於CAAC-OS的被形成面或頂面的方式排列。 FIG. 49B shows a Cs-corrected high-resolution TEM image in which area (1) in FIG. 49A is enlarged. From FIG. 49B, it can be confirmed that the metal atoms are arranged in a layer in the particles. Each metal atomic layer has a concave-convex configuration reflecting the surface on which the CAAC-OS film is formed (also referred to as the formed surface) or the top surface of the CAAC-OS film and is parallel to the formed surface or the top surface of the CAAC-OS arrangement.

如圖49B所示，CAAC-OS具有特有的原子排列。圖49C是以輔助線示出特有的原子排列的圖。由圖49B和圖49C可知，一個顆粒的尺寸為1nm以上且3nm以下左右，由顆粒與顆粒之間的傾斜產生的空隙的尺寸為0.8nm左右。因此，也可以將顆粒稱為奈米晶(nc：nanocrystal)。另外，也可以將CAAC-OS稱為具有CANC(C-Axis Aligned nanocrystals：c軸配向奈米晶)的氧化物半導體。 As shown in FIG. 49B, CAAC-OS has a unique atomic arrangement. FIG. 49C is a diagram showing a unique atomic arrangement with auxiliary lines. As can be seen from FIGS. 49B and 49C, the size of one particle is about 1 nm or more and about 3 nm or less, and the size of the void caused by the inclination between the particles is about 0.8 nm. Therefore, the particles may also be referred to as nanocrystals (nc: nanocrystal). In addition, CAAC-OS may also be referred to as an oxide semiconductor having CANC (C-Axis Aligned nanocrystals: c-axis aligned nanocrystals).

在此，根據Cs校正高解析度TEM影像，將基板5120上的CAAC-OS的顆粒5100的配置示意性地表示為堆積磚塊或塊體的結構(參照圖49D)。在圖49C中觀察到的在顆粒與顆粒之間產生傾斜的部分相當於圖49D所示的區域5161。 Here, the high-resolution TEM image is corrected based on Cs, and the arrangement of the CAAC-OS particles 5100 on the substrate 5120 is schematically shown as a structure of stacked bricks or blocks (see FIG. 49D). The portion where the inclination occurs between the particles observed in FIG. 49C corresponds to the area 5161 shown in FIG. 49D.

圖50A示出從大致垂直於樣本面的方向觀察所得到的CAAC-OS的平面的Cs校正高解析度TEM影 像。圖50B、圖50C和圖50D分別示出將圖50A中的區域(1)、區域(2)和區域(3)放大的Cs校正高解析度TEM影像。由圖50B、圖50C和圖50D可知在顆粒中金屬原子排列為三角形狀、四角形狀或六角形狀。但是，在不同的顆粒之間金屬原子的排列沒有規律性。 Fig. 50A shows a Cs corrected high-resolution TEM image of the plane of the CAAC-OS obtained when viewed from a direction substantially perpendicular to the sample plane. 50B, 50C, and 50D show the Cs corrected high-resolution TEM images of the area (1), area (2), and area (3) enlarged in FIG. 50A, respectively. From FIGS. 50B, 50C, and 50D, it can be seen that the metal atoms in the particles are arranged in a triangular shape, a quadrangular shape, or a hexagonal shape. However, the arrangement of metal atoms between different particles is not regular.

接著，說明使用X射線繞射(XRD：X-Ray Diffraction)裝置進行分析的CAAC-OS。例如，當利用out-of-plane法分析包含InGaZnO4結晶的CAAC-OS的結構時，如圖51A所示，在繞射角(2θ)為31°附近時常出現峰值。由於該峰值來源於InGaZnO4結晶的(009)面，由此可知CAAC-OS中的結晶具有c軸配向性，並且c軸朝向大致垂直於被形成面或頂面的方向。 Next, the CAAC-OS analyzed using an X-ray diffraction (XRD: X-Ray Diffraction) device will be described. For example, when the structure of CAAC-OS containing InGaZnO 4 crystals is analyzed by the out-of-plane method, as shown in FIG. 51A, a peak often occurs when the diffraction angle (2θ) is around 31°. Since this peak comes from the (009) plane of the InGaZnO 4 crystal, it can be seen that the crystal in CAAC-OS has a c-axis alignment, and the c-axis direction is substantially perpendicular to the direction of the formed surface or the top surface.

注意，當利用out-of-plane法分析CAAC-OS的結構時，除了2θ為31°附近的峰值以外，有時在2θ為36°附近時也出現峰值。2θ為36°附近的峰值表示CAAC-OS中的一部分包含不具有c軸配向性的結晶。較佳的是，在利用out-of-plane法分析的CAAC-OS的結構中，在2θ為31°附近時出現峰值而在2θ為36°附近時不出現峰值。 Note that when the structure of the CAAC-OS is analyzed by the out-of-plane method, in addition to the peak around 2θ of 31°, the peak may also appear around 2θ at around 36°. The peak value of 2θ at around 36° indicates that a part of CAAC-OS contains crystals that do not have c-axis alignment. Preferably, in the structure of CAAC-OS analyzed by the out-of-plane method, a peak appears when 2θ is around 31°, and a peak does not appear when 2θ is around 36°.

另一方面，當利用從大致垂直於c軸的方向使X射線入射到樣本的in-plane法分析CAAC-OS的結構時，在2θ為56°附近時出現峰值。該峰值來源於InGaZnO4結晶的(110)面。在CAAC-OS中，即使將2θ固定為56°附近並在以樣本面的法線向量為軸(Φ軸)旋轉樣本 的條件下進行分析(Φ掃描)，也如圖51B所示的那樣觀察不到明確的峰值。相比之下，在InGaZnO4的單晶氧化物半導體中，在將2θ固定為56°附近來進行Φ掃描時，如圖51C所示的那樣觀察到來源於相等於(110)面的結晶面的六個峰值。因此，由使用XRD的結構分析可以確認到CAAC-OS中的a軸和b軸的配向沒有規律性。 On the other hand, when the structure of CAAC-OS is analyzed by the in-plane method in which X-rays are incident on the sample from a direction substantially perpendicular to the c-axis, a peak appears when 2θ is around 56°. This peak comes from the (110) plane of InGaZnO 4 crystal. In CAAC-OS, even if 2θ is fixed at around 56° and the sample is analyzed (Φ scan) with the normal vector of the sample plane as the axis (Φ axis), the observation is performed as shown in FIG. 51B There is no clear peak. In contrast, in a single crystal oxide semiconductor of InGaZnO 4 , when 2θ is fixed at 56° to perform Φ scanning, as shown in FIG. 51C, a crystal plane derived from the (110) plane is observed. Six peaks. Therefore, from the structural analysis using XRD, it can be confirmed that the alignment of the a-axis and b-axis in CAAC-OS has no regularity.

接著，說明利用電子繞射進行分析的CAAC-OS。例如，當對包含InGaZnO4結晶的CAAC-OS在平行於樣本面的方向上入射束徑為300nm的電子線時，可能會獲得圖52A所示的繞射圖案(也稱為選區透過電子繞射圖案)。在該繞射圖案中包含起因於InGaZnO4結晶的(009)面的斑點。因此，由電子繞射也可知CAAC-OS所包含的顆粒具有c軸配向性，並且c軸朝向大致垂直於被形成面或頂面的方向。另一方面，圖52B示出對相同的樣本在垂直於樣本面的方向上入射束徑為300nm的電子線時的繞射圖案。由圖52B觀察到環狀的繞射圖案。因此，由電子繞射也可知CAAC-OS所包含的顆粒的a軸和b軸不具有配向性。可以認為圖52B中的第一環起因於InGaZnO4結晶的(010)面和(100)面等。另外，可以認為圖52B中的第二環起因於(110)面等。 Next, the CAAC-OS analyzed by electron diffraction will be described. For example, when an electron beam with a beam diameter of 300 nm is incident on a CAAC-OS containing InGaZnO 4 crystal in a direction parallel to the sample plane, a diffraction pattern shown in FIG. 52A (also referred to as a selective transmission electron diffraction may be obtained) pattern). This diffraction pattern includes specks from the (009) plane of InGaZnO 4 crystal. Therefore, it can also be seen from the electron diffraction that the particles contained in CAAC-OS have c-axis alignment, and the c-axis is oriented in a direction substantially perpendicular to the surface to be formed or the top surface. On the other hand, FIG. 52B shows a diffraction pattern when an electron beam with a beam diameter of 300 nm is incident on the same sample in a direction perpendicular to the sample plane. The ring-shaped diffraction pattern is observed from FIG. 52B. Therefore, it can also be seen from the electron diffraction that the a-axis and the b-axis of the particles contained in CAAC-OS do not have alignment. It can be considered that the first ring in FIG. 52B is caused by the (010) plane and (100) plane of InGaZnO 4 crystal. In addition, it can be considered that the second ring in FIG. 52B is caused by the (110) plane or the like.

如上所述，CAAC-OS是結晶性高的氧化物半導體。氧化物半導體的結晶性有時會因為雜質的混入或缺陷的產生等而得到降低，所以從相反的角度來看，CAAC-OS也可以說是雜質或缺陷(氧缺陷等)少的氧化物半導 體。 As described above, CAAC-OS is an oxide semiconductor with high crystallinity. The crystallinity of the oxide semiconductor may be reduced due to the inclusion of impurities or the generation of defects, so from the opposite point of view, CAAC-OS can also be said to be an oxide semiconductor with few impurities or defects (oxygen defects, etc.) .

此外，雜質是指氧化物半導體的主要成分以外的元素，諸如氫、碳、矽和過渡金屬元素等。例如，與氧的鍵合力比構成氧化物半導體的金屬元素強的矽等元素會奪取氧化物半導體中的氧，由此打亂氧化物半導體的原子排列，導致結晶性下降。另外，由於鐵或鎳等的重金屬、氬、二氧化碳等的原子半徑(或分子半徑)大，所以會打亂氧化物半導體的原子排列，導致結晶性下降。 In addition, impurities refer to elements other than the main components of the oxide semiconductor, such as hydrogen, carbon, silicon, and transition metal elements. For example, elements such as silicon, which has a stronger bonding force with oxygen than the metal element constituting the oxide semiconductor, take oxygen from the oxide semiconductor, thereby disrupting the atomic arrangement of the oxide semiconductor, resulting in decreased crystallinity. In addition, since the atomic radius (or molecular radius) of heavy metals such as iron and nickel, argon, and carbon dioxide is large, the atomic arrangement of the oxide semiconductor is disturbed, resulting in decreased crystallinity.

在氧化物半導體具有雜質或缺陷的情況下，其特性有時因為光或熱等而發生變動。例如，包含於氧化物半導體的雜質有時會成為載子陷阱或載子發生源。另外，氧化物半導體中的氧缺陷有時會成為載子陷阱或因俘獲氫而成為載子發生源。 When the oxide semiconductor has impurities or defects, its characteristics may change due to light, heat, or the like. For example, impurities contained in an oxide semiconductor may sometimes become a carrier trap or a carrier generation source. In addition, oxygen defects in the oxide semiconductor may sometimes become a carrier trap or a carrier generation source by trapping hydrogen.

雜質或氧缺陷少的CAAC-OS為載子密度低的氧化物半導體。明確而言，可以將載子密度設定為低於8×1011/cm3，較佳為低於1×1011/cm3，更佳為低於1×1010/cm3且為1×10-9/cm3以上。將這種氧化物半導體稱為高純度本質或實質上高純度本質的氧化物半導體。CAAC-OS的雜質濃度和缺陷態密度低。即，CAAC-OS可以說是具有穩定的特性的氧化物半導體。 CAAC-OS with few impurities or oxygen defects is an oxide semiconductor with a low carrier density. Specifically, the carrier density can be set below 8×10 11 /cm 3 , preferably below 1×10 11 /cm 3 , more preferably below 1×10 10 /cm 3 and 1× 10 -9 /cm 3 or more. Such an oxide semiconductor is called an oxide semiconductor of high purity essence or substantially high purity essence. The impurity concentration and defect state density of CAAC-OS are low. That is, CAAC-OS can be said to be an oxide semiconductor having stable characteristics.

〈nc-OS〉 <nc-OS>

接著說明nc-OS。 Next, nc-OS will be described.

在nc-OS的高解析度TEM影像中有能夠觀察 到結晶部的區域和觀察不到明確的結晶部的區域。nc-OS所包含的結晶部的尺寸大多為1nm以上且10nm以下或1nm以上且3nm以下。注意，有時將其結晶部的尺寸為大於10nm且為100nm以下的氧化物半導體稱為微晶氧化物半導體。例如，在nc-OS的高解析度TEM影像中，有時無法明確地觀察到晶界。注意，奈米晶的來源有可能與CAAC-OS中的顆粒相同。因此，下面有時將nc-OS的結晶部稱為顆粒。 In the high-resolution TEM image of nc-OS, there are regions where crystal parts can be observed and regions where no clear crystal parts can be observed. The size of the crystal part included in nc-OS is often 1 nm or more and 10 nm or less or 1 nm or more and 3 nm or less. Note that an oxide semiconductor whose crystal part has a size of more than 10 nm and 100 nm or less is sometimes referred to as a microcrystalline oxide semiconductor. For example, in a high-resolution TEM image of nc-OS, sometimes the grain boundary cannot be clearly observed. Note that the source of nanocrystals may be the same as the particles in CAAC-OS. Therefore, in the following, the crystal portion of nc-OS is sometimes referred to as particles.

在nc-OS中，微小的區域(例如1nm以上且10nm以下的區域，特別是1nm以上且3nm以下的區域)中的原子排列具有週期性。另外，nc-OS在不同的顆粒之間觀察不到結晶定向的規律性。因此，在膜整體中觀察不到配向性。所以，有時nc-OS在某些分析方法中與a-like OS或非晶氧化物半導體沒有差別。例如，當藉由利用使用其直徑比顆粒大的X射線束的out-of-plane法對nc-OS進行分析時，檢測不到表示結晶面的峰值。此外，在使用其束徑比顆粒大(例如，50nm以上)的電子束對nc-OS進行電子繞射時，觀察到類似光暈圖案的繞射圖案。另一方面，在使用其束徑近於顆粒或者比顆粒小的電子射線對nc-OS進行奈米束電子繞射時，觀察到斑點。另外，在nc-OS的奈米束電子繞射圖案中，有時觀察到如圓圈那樣的(環狀的)亮度高的區域。而且，在nc-OS的奈米束電子繞射圖案中，有時還觀察到環狀的區域內的多個斑點。 In nc-OS, the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, especially a region of 1 nm or more and 3 nm or less) has periodicity. In addition, nc-OS can not observe the regularity of crystal orientation between different particles. Therefore, alignment is not observed in the entire film. Therefore, sometimes nc-OS is not different from a-like OS or amorphous oxide semiconductor in some analysis methods. For example, when the nc-OS is analyzed by the out-of-plane method using an X-ray beam whose diameter is larger than the particles, the peak indicating the crystal plane cannot be detected. In addition, when an electron beam whose beam diameter is larger than particles (for example, 50 nm or more) is used for electron diffraction of nc-OS, a diffraction pattern similar to a halo pattern is observed. On the other hand, when using nano-beam electron diffraction of nc-OS with electron beams whose beam diameter is close to or smaller than particles, speckles were observed. In addition, in the nanobeam electron diffraction pattern of nc-OS, a high-brightness (circular) region such as a circle is sometimes observed. In addition, in the nanobeam electron diffraction pattern of nc-OS, a plurality of spots in a ring-shaped area may be observed.

如此，由於在顆粒(奈米晶)之間結晶定向都沒 有規律性，所以也可以將nc-OS稱為包含RANC(Random Aligned nanocrystals：無規配向奈米晶)的氧化物半導體或包含NANC(Non-Aligned nanocrystals：無配向奈米晶)的氧化物半導體。 In this way, since there is no regularity in the crystal orientation between particles (nanocrystals), nc-OS may also be called an oxide semiconductor containing RANC (Random Aligned nanocrystals) or NANC ( Non-Aligned nanocrystals: non-aligned nanocrystals) oxide semiconductors.

nc-OS是規律性比非晶氧化物半導體高的氧化物半導體。因此，nc-OS的缺陷態密度比a-like OS及非晶氧化物半導體低。但是，在nc-OS中的不同的顆粒之間觀察不到晶體配向的規律性。所以，nc-OS的缺陷態密度比CAAC-OS高。 nc-OS is an oxide semiconductor with higher regularity than amorphous oxide semiconductors. Therefore, the density of defect states of nc-OS is lower than that of a-like OS and amorphous oxide semiconductors. However, no regularity of crystal alignment was observed between different particles in nc-OS. Therefore, the density of defect states of nc-OS is higher than that of CAAC-OS.

〈a-like OS〉 <a-like OS>

a-like OS是具有介於nc-OS與非晶氧化物半導體之間的結構的氧化物半導體。 The a-like OS is an oxide semiconductor having a structure between nc-OS and an amorphous oxide semiconductor.

在a-like OS的高解析度TEM影像中有時觀察到空洞。另外，在高解析度TEM影像中，有能夠明確地觀察到結晶部的區域和不能觀察到結晶部的區域。 In high-resolution TEM images of a-like OS, holes are sometimes observed. In addition, in the high-resolution TEM image, there are regions in which crystal parts can be clearly observed and regions in which crystal parts cannot be observed.

由於a-like OS包含空洞，所以其結構不穩定。為了證明與CAAC-OS及nc-OS相比a-like OS具有不穩定的結構，下面示出電子照射所導致的結構變化。 Since a-like OS contains holes, its structure is unstable. In order to prove that a-like OS has an unstable structure compared to CAAC-OS and nc-OS, the structural changes caused by electron irradiation are shown below.

作為進行電子照射的樣本，準備a-like OS(樣本A)、nc-OS(樣本B)和CAAC-OS(樣本C)。每個樣本都是In-Ga-Zn氧化物。 As samples subjected to electron irradiation, a-like OS (sample A), nc-OS (sample B), and CAAC-OS (sample C) were prepared. Each sample is In-Ga-Zn oxide.

首先，取得各樣本的高解析度剖面TEM影像。由高解析度剖面TEM影像可知，每個樣本都具有結 晶部。 First, obtain high-resolution cross-sectional TEM images of each sample. It can be seen from the high-resolution cross-sectional TEM image that each sample has a crystal part.

注意，如下那樣決定將哪個部分作為一個結晶部。例如，已知InGaZnO4結晶的單位晶格具有包括三個In-O層和六個Ga-Zn-O層的9個層在c軸方向上以層狀層疊的結構。這些彼此靠近的層的間隔與(009)面的晶格表面間隔(也稱為d值)是幾乎相等的，由結晶結構分析求出其值為0.29nm。由此，可以將晶格條紋的間隔為0.28nm以上且0.30nm以下的部分作為InGaZnO4結晶部。每個晶格條紋對應於InGaZnO4結晶的a-b面。 Note that it is decided which part is to be a crystal part as follows. For example, it is known that the unit lattice of InGaZnO 4 crystal has a structure in which 9 layers including three In-O layers and six Ga-Zn-O layers are layered in the c-axis direction. The interval between these layers close to each other is almost equal to the lattice surface interval (also referred to as d value) of the (009) plane, and the value is 0.29 nm as determined by crystal structure analysis. Thus, a portion of the lattice fringe having a distance of 0.28 nm or more and 0.30 nm or less can be used as the InGaZnO 4 crystal part. Each lattice fringe corresponds to the ab plane of InGaZnO 4 crystal.

圖53示出調查了各樣本的結晶部(22個部分至45個部分)的平均尺寸的例子。注意，結晶部尺寸對應於上述晶格條紋的長度。由圖53可知，在a-like OS中，結晶部根據電子的累積照射量逐漸變大。明確而言，如圖53中的(1)所示，可知在利用TEM的觀察初期尺寸為1.2nm左右的結晶部(也稱為初始晶核)在累積照射量為4.2×108e-/nm2時生長到2.6nm左右。另一方面，可知nc-OS和CAAC-OS在開始電子照射時到電子的累積照射量為4.2×108e-/nm2的範圍內，結晶部的尺寸都沒有變化。明確而言，如圖53中的(2)及(3)所示，可知無論電子的累積照射量如何，nc-OS及CAAC-OS的平均結晶部尺寸都分別為1.4nm左右及2.1nm左右。 Fig. 53 shows an example in which the average size of the crystal parts (22 parts to 45 parts) of each sample was investigated. Note that the size of the crystal part corresponds to the length of the lattice fringe described above. As can be seen from FIG. 53, in the a-like OS, the crystalline portion gradually becomes larger according to the cumulative irradiation amount of electrons. Specifically, as shown in 53 (1), in the crystal size of the initial portion of the TEM observation is about 1.2nm (also referred to as initial nuclei) the cumulative exposure dose of 4.2 × 10 8 e - / At nm 2 , it grows to about 2.6nm. On the other hand, it can be seen that nc-OS and CAAC-OS did not change the size of the crystal portion within the range of 4.2×10 8 e − /nm 2 from the start of electron irradiation to the cumulative amount of electrons. Specifically, as shown in (2) and (3) of FIG. 53, it can be seen that the average crystal size of nc-OS and CAAC-OS are about 1.4 nm and 2.1 nm, respectively, regardless of the cumulative irradiation amount of electrons .

如此，有時電子照射引起a-like OS中的結晶部的生長。另一方面，可知在nc-OS和CAAC-OS中，幾乎沒有電子照射所引起的結晶部的生長。即，a-like OS 與CAAC-OS及nc-OS相比具有不穩定的結構。 As such, electron irradiation sometimes causes the growth of crystal parts in a-like OS. On the other hand, it can be seen that in nc-OS and CAAC-OS, there is almost no growth of crystal parts caused by electron irradiation. That is, a-like OS has an unstable structure compared to CAAC-OS and nc-OS.

此外，由於a-like OS包含空洞，所以其密度比nc-OS及CAAC-OS低。具體地，a-like OS的密度為具有相同組成的單晶氧化物半導體的78.6%以上且小於92.3%。nc-OS的密度及CAAC-OS的密度為具有相同組成的單晶氧化物半導體的92.3%以上且小於100%。注意，難以形成其密度小於單晶氧化物半導體的密度的78%的氧化物半導體。 In addition, since a-like OS contains holes, its density is lower than that of nc-OS and CAAC-OS. Specifically, the density of a-like OS is 78.6% or more and less than 92.3% of single crystal oxide semiconductors having the same composition. The density of nc-OS and the density of CAAC-OS are 92.3% or more and less than 100% of single crystal oxide semiconductors having the same composition. Note that it is difficult to form an oxide semiconductor whose density is less than 78% of the density of a single crystal oxide semiconductor.

例如，在原子個數比滿足In：Ga：Zn=1：1：1的氧化物半導體中，具有菱方晶系結構的單晶InGaZnO4的密度為6.357g/cm3。因此，例如，在原子個數比滿足In：Ga：Zn=1：1：1的氧化物半導體中，a-like OS的密度為5.0g/cm3以上且小於5.9g/cm3。另外，例如，在原子個數比滿足In：Ga：Zn=1：1：1的氧化物半導體中，nc-OS的密度和CAAC-OS的密度為5.9g/cm3以上且小於6.3g/cm3。 For example, in an oxide semiconductor whose atomic number ratio satisfies In:Ga:Zn=1:1:1, the density of single-crystal InGaZnO 4 having a rhombohedral structure is 6.357 g/cm 3 . Therefore, for example, in an oxide semiconductor whose atomic number ratio satisfies In:Ga:Zn=1:1:1, the density of a-like OS is 5.0 g/cm 3 or more and less than 5.9 g/cm 3 . In addition, for example, in an oxide semiconductor whose atomic number ratio satisfies In:Ga:Zn=1:1:1, the density of nc-OS and the density of CAAC-OS are 5.9 g/cm 3 or more and less than 6.3 g/ cm 3 .

注意，有時不存在相同組成的單晶。此時，藉由以任意比例組合組成不同的單晶氧化物半導體，可以估計出相當於所希望的組成的單晶氧化物半導體的密度。根據組成不同的單晶的組合比例使用加權平均計算出相當於所希望的組成的單晶氧化物半導體的密度即可。注意，較佳為儘可能減少所組合的單晶氧化物半導體的種類來計算密度。 Note that sometimes there is no single crystal of the same composition. At this time, by combining single crystal oxide semiconductors having different compositions in arbitrary ratios, the density of single crystal oxide semiconductors corresponding to the desired composition can be estimated. The density of the single crystal oxide semiconductor corresponding to the desired composition may be calculated using a weighted average according to the combination ratio of single crystals having different compositions. Note that it is preferable to reduce the types of single crystal oxide semiconductors combined as much as possible to calculate the density.

如上所述，氧化物半導體具有各種結構及各 種特性。注意，氧化物半導體例如可以是包括非晶氧化物半導體、a-like OS、nc-OS和CAAC-OS中的兩種以上的疊層膜。 As described above, oxide semiconductors have various structures and various characteristics. Note that the oxide semiconductor may be, for example, a stacked film including two or more of amorphous oxide semiconductor, a-like OS, nc-OS, and CAAC-OS.

本實施方式所示的結構、方法可以與其他實施方式所示的結構、方法適當地組合而使用。 The structure and method shown in this embodiment can be used in appropriate combination with the structure and method shown in other embodiments.

實施方式7 Embodiment 7

在本實施方式中，使用圖41A至圖41D說明可以使用本發明的一個方式的半導體裝置的顯示裝置。 In this embodiment, a display device that can use the semiconductor device of one embodiment of the present invention will be described using FIGS. 41A to 41D.

圖41A所示的顯示裝置包括：具有顯示元件的像素的區域(以下稱為像素部542)；配置在像素部542外側並具有用來驅動像素的電路的電路部(以下稱為驅動電路部544)；具有保護元件的功能的電路(以下稱為保護電路546)；以及端子部547。此外，也可以採用不設置保護電路546的結構。 The display device shown in FIG. 41A includes: a region of pixels having display elements (hereinafter referred to as a pixel portion 542); and a circuit portion disposed outside the pixel portion 542 and having a circuit for driving pixels (hereinafter referred to as a driving circuit portion 544) ); a circuit having the function of a protection element (hereinafter referred to as a protection circuit 546); and a terminal portion 547. In addition, a configuration in which the protection circuit 546 is not provided may be adopted.

驅動電路部544的一部分或全部較佳為與像素部542形成在同一基板上。由此，可以減少構件的數量或端子的數量。當驅動電路部544的一部分或全部不與像素部542形成在同一基板上時，驅動電路部544的一部分或全部可以藉由COG(Chip On Glass)或TAB(Tape Automated Bonding)安裝。 Part or all of the driving circuit portion 544 is preferably formed on the same substrate as the pixel portion 542. Thereby, the number of components or the number of terminals can be reduced. When part or all of the driving circuit part 544 is not formed on the same substrate as the pixel part 542, part or all of the driving circuit part 544 can be mounted by COG (Chip On Glass) or TAB (Tape Automated Bonding).

像素部542包括用來驅動配置為X行(X為2以上的自然數)Y列(Y為2以上的自然數)的多個顯示元件的電路(以下稱為像素電路541)，驅動電路部544包括輸 出選擇像素的信號(掃描信號)的電路(以下稱為閘極驅動器544a)、用來供應用來驅動像素的顯示元件的信號(資料信號)的電路(以下稱為源極驅動器544b)等的驅動電路。 The pixel portion 542 includes a circuit (hereinafter referred to as a pixel circuit 541) for driving a plurality of display elements arranged in X rows (X is a natural number of 2 or more) and Y columns (Y is a natural number of 2 or more), and the drive circuit portion 544 includes a circuit that outputs a signal (scanning signal) for selecting a pixel (hereinafter referred to as a gate driver 544a), and a circuit for supplying a signal (data signal) for driving a display element of the pixel (hereinafter referred to as a source driver 544b) Driver circuit.

閘極驅動器544a具有移位暫存器等。閘極驅動器544a藉由端子部547被輸入用來驅動移位暫存器的信號並輸出信號。例如，閘極驅動器544a被輸入起動脈衝信號、時脈信號等並輸出脈衝信號。閘極驅動器544a具有控制被供應掃描信號的佈線(以下稱為掃描線GL_1至GL_X)的電位的功能。另外，也可以設置多個閘極驅動器544a，並藉由多個閘極驅動器544a分別控制掃描線GL_1至GL_X。或者，閘極驅動器544a具有能夠供應初始化信號的功能。但是，不侷限於此，閘極驅動器544a也可以供應其他信號。 The gate driver 544a has a shift register and the like. The gate driver 544a receives the signal for driving the shift register through the terminal portion 547 and outputs the signal. For example, the gate driver 544a receives a start pulse signal, a clock signal, etc. and outputs a pulse signal. The gate driver 544a has a function of controlling the potential of wirings (hereinafter referred to as scan lines GL_1 to GL_X) to which scan signals are supplied. In addition, a plurality of gate drivers 544a may be provided, and the scanning lines GL_1 to GL_X may be controlled by the plurality of gate drivers 544a, respectively. Alternatively, the gate driver 544a has a function capable of supplying an initialization signal. However, not limited to this, the gate driver 544a may also supply other signals.

源極驅動器544b具有移位暫存器等。除了用來驅動移位暫存器的信號之外，從其中得出資料信號的信號(影像信號)也藉由端子部547被輸入到源極驅動器544b。源極驅動器544b具有根據影像信號生成寫入到像素電路541的資料信號的功能。另外，源極驅動器544b具有依照輸入起動脈衝信號、時脈信號等而得到的脈衝信號來控制資料信號的輸出的功能。另外，源極驅動器544b具有控制被供應資料信號的佈線(以下稱為信號線DL_1至DL_Y)的電位的功能。或者，源極驅動器544b具有能夠供應初始化信號的功能。但是，不侷限於此，源極驅動器544b可以供應其他信號。 The source driver 544b has a shift register and the like. In addition to the signal for driving the shift register, the signal (image signal) from which the data signal is derived is also input to the source driver 544b through the terminal portion 547. The source driver 544b has a function of generating a data signal written to the pixel circuit 541 based on the video signal. In addition, the source driver 544b has a function of controlling the output of the data signal in accordance with a pulse signal obtained by inputting a start pulse signal, a clock signal, and the like. In addition, the source driver 544b has a function of controlling the potential of wirings (hereinafter referred to as signal lines DL_1 to DL_Y) to which data signals are supplied. Alternatively, the source driver 544b has a function capable of supplying an initialization signal. However, not limited to this, the source driver 544b may supply other signals.

源極驅動器544b例如使用多個類比開關等來構成。藉由依次使多個類比開關開啟，源極驅動器544b可以輸出對影像信號進行時間分割而成的信號作為資料信號。此外，也可以使用移位暫存器等構成源極驅動器544b。 The source driver 544b is configured using a plurality of analog switches, for example. By sequentially turning on a plurality of analog switches, the source driver 544b can output a signal obtained by time-dividing the image signal as a data signal. In addition, the source driver 544b may be configured using a shift register or the like.

多個像素電路541的每一個分別藉由被供應掃描信號的多個掃描線GL之一而被輸入脈衝信號，並藉由被供應資料信號的多個信號線DL之一而被輸入資料信號。另外，多個像素電路541的每一個藉由閘極驅動器544a來控制資料信號的資料的寫入及保持。例如，藉由掃描線GL_m(m是X以下的自然數)從閘極驅動器544a對第m行第n列的像素電路541輸入脈衝信號，並根據掃描線GL_m的電位而藉由信號線DL_n(n是Y以下的自然數)從源極驅動器544b對第m行第n列的像素電路541輸入資料信號。 Each of the plurality of pixel circuits 541 is input with a pulse signal by one of a plurality of scan lines GL supplied with scan signals, and a data signal is input with one of a plurality of signal lines DL supplied with data signals. In addition, each of the plurality of pixel circuits 541 controls the writing and holding of the data of the data signal by the gate driver 544a. For example, a pulse signal is input from the gate driver 544a to the pixel circuit 541 in the m-th row and n-th column through the scan line GL_m (m is a natural number below X), and the signal line DL_n( n is a natural number equal to or less than Y) A data signal is input from the source driver 544b to the pixel circuit 541 in the mth row and nth column.

圖41A所示的保護電路546例如與作為閘極驅動器544a和像素電路541之間的佈線的掃描線GL連接。或者，保護電路546與作為源極驅動器544b和像素電路541之間的佈線的信號線DL連接。或者，保護電路546可以與閘極驅動器544a和端子部547之間的佈線連接。或者，保護電路546可以與源極驅動器544b和端子部547之間的佈線連接。此外，端子部547是指設置有用來從外部的電路對顯示裝置輸入電源、控制信號及影像信號的端子的部分。 The protection circuit 546 shown in FIG. 41A is connected to the scanning line GL which is a wiring between the gate driver 544a and the pixel circuit 541, for example. Alternatively, the protection circuit 546 is connected to the signal line DL which is a wiring between the source driver 544b and the pixel circuit 541. Alternatively, the protection circuit 546 may be connected to the wiring between the gate driver 544a and the terminal portion 547. Alternatively, the protection circuit 546 may be connected to the wiring between the source driver 544b and the terminal portion 547. The terminal portion 547 refers to a portion provided with terminals for inputting power, control signals, and video signals to the display device from an external circuit.

保護電路546是在與其連接的佈線被供應一定的範圍之外的電位時使該佈線與其他佈線之間導通的電路。 The protection circuit 546 is a circuit that conducts between the wiring and other wiring when the wiring connected thereto is supplied with a potential outside a certain range.

如圖41A所示，藉由對像素部542和驅動電路部544分別設置保護電路546，可以提高顯示裝置對因ESD(Electro Static Discharge：靜電放電)等而產生的過電流的耐性。但是，保護電路546的結構不侷限於此，例如，也可以採用將閘極驅動器544a與保護電路546連接的結構或將源極驅動器544b與保護電路546連接的結構。或者，也可以採用將端子部547與保護電路546連接的結構。 As shown in FIG. 41A, by providing protection circuits 546 for the pixel portion 542 and the drive circuit portion 544, the resistance of the display device to overcurrent caused by ESD (Electro Static Discharge) or the like can be improved. However, the structure of the protection circuit 546 is not limited to this. For example, a structure in which the gate driver 544a is connected to the protection circuit 546 or a structure in which the source driver 544b is connected to the protection circuit 546 may be adopted. Alternatively, the terminal portion 547 and the protection circuit 546 may be connected.

另外，雖然在圖41A中示出由閘極驅動器544a和源極驅動器544b形成驅動電路部544的例子，但是不侷限於此結構。例如，也可以採用只形成閘極驅動器544a並安裝形成有另外準備的源極驅動電路的基板(例如，由單晶半導體膜、多晶半導體膜形成的驅動電路基板)的結構。 In addition, although an example in which the drive circuit portion 544 is formed by the gate driver 544a and the source driver 544b is shown in FIG. 41A, it is not limited to this structure. For example, a structure in which only the gate driver 544a is formed and a source drive circuit separately prepared (for example, a drive circuit substrate formed of a single crystal semiconductor film or a polycrystalline semiconductor film) may be mounted.

另外，圖41A所示的多個像素電路541例如可以採用圖41B所示的結構。 In addition, the plurality of pixel circuits 541 shown in FIG. 41A may adopt the structure shown in FIG. 41B, for example.

圖41B所示的像素電路541包括液晶元件570、電晶體550以及電容元件560。 The pixel circuit 541 shown in FIG. 41B includes a liquid crystal element 570, a transistor 550, and a capacitive element 560.

作為電晶體550，可以適當地使用前面的實施方式所示的電晶體。 As the transistor 550, the transistor shown in the previous embodiment can be suitably used.

根據像素電路541的規格適當地設定液晶元 件570的一對電極中的一個電極的電位。根據被寫入的資料設定液晶元件570的配向狀態。此外，也可以對多個像素電路541的每一個所具有的液晶元件570的一對電極中的一個電極供應共用電位。此外，也可以對各行的像素電路541的每一個所具有的液晶元件570的一對電極中的一個電極供應不同的電位。 The potential of one of the pair of electrodes of the liquid crystal element 570 is appropriately set according to the specifications of the pixel circuit 541. The alignment state of the liquid crystal element 570 is set according to the written data. In addition, a common potential may be supplied to one of the pair of electrodes of the liquid crystal element 570 included in each of the plurality of pixel circuits 541. In addition, a different potential may be supplied to one of the pair of electrodes of the liquid crystal element 570 included in each of the pixel circuits 541 in each row.

在第m行第n列的像素電路541中，電晶體550的源極電極和汲極電極中的一方與信號線DL_n電連接，源極和汲極中的另一方與液晶元件570的一對電極中的另一個電極電連接。此外，電晶體550的閘極電極與掃描線GL_m電連接。電晶體550具有藉由被開啟或關閉而對資料信號的資料的寫入進行控制的功能。 In the pixel circuit 541 in the mth row and nth column, one of the source electrode and the drain electrode of the transistor 550 is electrically connected to the signal line DL_n, and the other of the source and the drain is connected to the pair of the liquid crystal element 570 The other of the electrodes is electrically connected. In addition, the gate electrode of the transistor 550 is electrically connected to the scanning line GL_m. The transistor 550 has a function of controlling the writing of data of the data signal by being turned on or off.

電容元件560的一對電極中的一個電極與被供應電位的佈線(以下，稱為電位供應線VL)電連接，另一個電極與液晶元件570的一對電極中的另一個電極電連接。此外，根據像素電路541的規格適當地設定電位供應線VL的電位的值。電容元件560具有儲存被寫入的資料的儲存電容器的功能。 One of the pair of electrodes of the capacitive element 560 is electrically connected to a wiring (hereinafter, referred to as a potential supply line VL) to which a potential is supplied, and the other electrode is electrically connected to the other of the pair of electrodes of the liquid crystal element 570. In addition, the potential value of the potential supply line VL is appropriately set according to the specifications of the pixel circuit 541. The capacitive element 560 has a function of a storage capacitor that stores written data.

例如，在具有圖41B的像素電路541的顯示裝置中，藉由圖41A所示的閘極驅動器544a依次選擇各行的像素電路541，並使電晶體550開啟而寫入資料信號。 For example, in the display device having the pixel circuit 541 of FIG. 41B, the pixel circuits 541 of each row are sequentially selected by the gate driver 544a shown in FIG. 41A, and the transistor 550 is turned on to write a data signal.

當電晶體550被關閉時，被寫入資料的像素電路541成為保持狀態。藉由按行依次進行上述步驟，可 以顯示影像。 When the transistor 550 is turned off, the pixel circuit 541 to which data is written becomes a holding state. By performing the above steps in order by row, images can be displayed.

圖41A所示的多個像素電路541例如可以採用圖41C所示的結構。 The plurality of pixel circuits 541 shown in FIG. 41A may adopt the structure shown in FIG. 41C, for example.

另外，圖41C所示的像素電路541包括電晶體552及554、電容元件562以及發光元件572。在此，可以適當地將前面的實施方式所示的電晶體應用於電晶體552和電晶體554中的一者或兩者。 In addition, the pixel circuit 541 shown in FIG. 41C includes transistors 552 and 554, a capacitive element 562, and a light-emitting element 572. Here, the transistor shown in the previous embodiment may be appropriately applied to one or both of the transistor 552 and the transistor 554.

電晶體552的源極電極和汲極電極中的一個電連接於被供應資料信號的佈線(信號線DL_n)。並且，電晶體552的閘極電極電連接於被供應閘極信號的佈線(掃描線GL_m)。 One of the source electrode and the drain electrode of the transistor 552 is electrically connected to the wiring (signal line DL_n) to which the data signal is supplied. In addition, the gate electrode of the transistor 552 is electrically connected to the wiring (scan line GL_m) to which the gate signal is supplied.

電晶體552具有藉由被開啟或關閉而對資料信號的寫入進行控制的功能。 The transistor 552 has a function of controlling the writing of data signals by being turned on or off.

作為電晶體552，較佳為使用具有正臨界電壓的電特性(也稱為常關閉特性)的電晶體。另外，較佳為使用截止電流(cutoff current)被降低的電晶體。因此，較佳為適當地使用實施方式1所示的100h、100j、100z、100n、100y或實施方式2所示的電晶體100t、100w、111b、111e、111h、111k。 As the transistor 552, it is preferable to use a transistor having an electrical characteristic with a positive threshold voltage (also referred to as a normally-off characteristic). In addition, it is preferable to use a transistor whose cutoff current is reduced. Therefore, it is preferable to use 100h, 100j, 100z, 100n, 100y described in Embodiment 1 or transistors 100t, 100w, 111b, 111e, 111h, 111k described in Embodiment 2.

電容元件562的一對電極中的一個與被供應電位的佈線(以下，稱為電位供應線VL_a)電連接，另一個與電晶體552的源極電極和汲極電極中的另一個電連接。 One of the pair of electrodes of the capacitive element 562 is electrically connected to a wiring to which a potential is supplied (hereinafter, referred to as a potential supply line VL_a), and the other is electrically connected to the other of the source electrode and the drain electrode of the transistor 552.

電容元件562具有儲存被寫入的資料的儲存 電容器的功能。 The capacitive element 562 has the function of a storage capacitor for storing written data.

電晶體554的源極電極和汲極電極中的一個與電位供應線VL_a電連接。並且，電晶體554的閘極電極與電晶體552的源極電極和汲極電極中的另一個電連接。 One of the source electrode and the drain electrode of the transistor 554 is electrically connected to the potential supply line VL_a. Also, the gate electrode of the transistor 554 is electrically connected to the other of the source electrode and the drain electrode of the transistor 552.

電晶體554具有藉由被開啟或關閉來控制流在發光元件572中的電流的功能。 The transistor 554 has a function of controlling the current flowing in the light emitting element 572 by being turned on or off.

為了使發光元件572得到充分的亮度，用作驅動電晶體的電晶體554需使用通態電流高的電晶體。另外，為了提高顯示裝置的驅動頻率而實現更流暢的視頻顯示，需使用場效移動率高的電晶體。因此，作為電晶體554，較佳為適當地使用實施方式2所示的電晶體100u、100x、111c、111f、111i、111m。 In order to obtain sufficient brightness of the light-emitting element 572, the transistor 554 used as the driving transistor needs to use a transistor with a high on-state current. In addition, in order to increase the driving frequency of the display device and achieve smoother video display, it is necessary to use transistors with a high field effect mobility. Therefore, as the transistor 554, it is preferable to appropriately use the transistors 100u, 100x, 111c, 111f, 111i, and 111m described in the second embodiment.

藉由縮小電晶體的通道長度，可以得到較高的場效移動率，但有時電晶體的臨界電壓向負方向變動(漂移)。將電晶體554的通道長度設定為0.5μm以上且4.5μm以下，並且如實施方式2所示的電晶體111i、111m，藉由設置相互電連接的一對閘極電極，可以在提高通態電流及場效移動率的同時，抑制臨界電壓的向負方向的變動。 By reducing the channel length of the transistor, a higher field-effect mobility can be obtained, but sometimes the critical voltage of the transistor changes (drifts) in the negative direction. By setting the channel length of the transistor 554 to 0.5 μm or more and 4.5 μm or less, and by providing a pair of gate electrodes electrically connected to each other as shown in the second embodiment, the transistors 111i and 111m can increase the on-state current Simultaneously with the field-effect mobility, the threshold voltage is suppressed from changing in the negative direction.

另一方面，用作選擇電晶體的電晶體552不需要如電晶體554那樣高的場效移動率，所以藉由使其通道長度大於電晶體554的通道長度，抑制電晶體554的臨界電壓的向負方向的變動(漂移)。其結果是，能夠實現顯 示裝置的高速工作及低功耗化。 On the other hand, the transistor 552 used as a selection transistor does not need the high field-effect mobility as the transistor 554, so by making the channel length larger than the channel length of the transistor 554, the critical voltage of the transistor 554 is suppressed Changes in the negative direction (drift). As a result, high-speed operation and low power consumption of the display device can be achieved.

例如，當將電晶體554的通道長度設定為0.5μm以上且4.5μm以下時，可以將電晶體552的通道長度設定為6μm。但是，電晶體552的通道長度至少大於電晶體554的通道長度即可，可以根據顯示裝置所需的特性適當地設定。 For example, when the channel length of the transistor 554 is set to 0.5 μm or more and 4.5 μm or less, the channel length of the transistor 552 can be set to 6 μm. However, the channel length of the transistor 552 may be at least greater than the channel length of the transistor 554, and can be appropriately set according to the characteristics required by the display device.

另外，電晶體552的截止電流的值較佳為比電晶體554的截止電流的值小。例如，藉由使電晶體552的通道長度與通道寬度的比(也稱為L/W比)大於電晶體554的L/W比，能夠使電晶體552的截止電流的值小於電晶體554的截止電流的值。另外，當電晶體554與電晶體552的通道寬度實質上相等時，藉由使電晶體552的通道長度大於電晶體554的通道長度，能夠降低電晶體552的截止電流的值。 In addition, the value of the off current of the transistor 552 is preferably smaller than the value of the off current of the transistor 554. For example, by making the ratio of the channel length of the transistor 552 to the channel width (also referred to as the L/W ratio) greater than the L/W ratio of the transistor 554, the value of the off current of the transistor 552 can be made smaller than that of the transistor 554 The value of the cut-off current. In addition, when the channel widths of the transistor 554 and the transistor 552 are substantially equal, by making the channel length of the transistor 552 larger than the channel length of the transistor 554, the value of the off current of the transistor 552 can be reduced.

另外，電晶體552也可以採用包括相互電連接的一對閘極電極的結構。注意，藉由使電晶體552為單閘極結構，可以減小用來成為一對閘極電極間的連接部的區域，從而可以縮小電晶體的面積，並可以降低像素的開口率的下降。注意，當採用大型的顯示裝置時，因為對用作像素的選擇電晶體的電晶體552施加的閘極佈線的寄生電容變大，所以採用單閘極結構是有效的。 In addition, the transistor 552 may have a structure including a pair of gate electrodes electrically connected to each other. Note that by making the transistor 552 a single gate structure, the area used as a connection between the pair of gate electrodes can be reduced, so that the area of the transistor can be reduced, and the decrease in the aperture ratio of the pixel can be reduced. Note that when a large-scale display device is adopted, since the parasitic capacitance of the gate wiring applied to the transistor 552 used as the selection transistor of the pixel becomes large, it is effective to adopt the single gate structure.

發光元件572的陽極和陰極中的一個與電位供應線VL_b電連接，另一個與電晶體554的源極電極和汲極電極中的另一個電連接。 One of the anode and the cathode of the light-emitting element 572 is electrically connected to the potential supply line VL_b, and the other is electrically connected to the other of the source electrode and the drain electrode of the transistor 554.

作為發光元件572，例如可以使用有機電致發光元件(也稱為有機EL元件)等。注意，發光元件572並不侷限於有機EL元件，也可以為由無機材料構成的無機EL元件。 As the light-emitting element 572, for example, an organic electroluminescence element (also referred to as an organic EL element) or the like can be used. Note that the light-emitting element 572 is not limited to an organic EL element, and may be an inorganic EL element composed of an inorganic material.

此外，電位供應線VL_a和電位供應線VL_b中的一個被施加高電源電位VDD，電位供應線VL_a和電位供應線VL_b中的另一個被施加低電源電位VSS。 In addition, one of the potential supply line VL_a and the potential supply line VL_b is applied with a high power supply potential VDD, and the other of the potential supply line VL_a and the potential supply line VL_b is applied with a low power supply potential VSS.

例如，在具有圖41C的像素電路541的顯示裝置中，藉由圖41A所示的閘極驅動器544a依次選擇各行的像素電路541，並使電晶體552開啟而寫入資料信號。 For example, in the display device having the pixel circuit 541 of FIG. 41C, the pixel circuits 541 of each row are sequentially selected by the gate driver 544a shown in FIG. 41A, and the transistor 552 is turned on to write a data signal.

當電晶體552被關閉時，被寫入資料的像素電路541成為保持狀態。並且，流在電晶體554的源極電極與汲極電極之間的電流量根據被寫入的資料信號的電位被控制，發光元件572以對應於流動的電流量的亮度發光。藉由按行依次進行上述步驟，可以顯示影像。 When the transistor 552 is turned off, the pixel circuit 541 to which data is written becomes a holding state. In addition, the amount of current flowing between the source electrode and the drain electrode of the transistor 554 is controlled according to the potential of the written data signal, and the light-emitting element 572 emits light with a brightness corresponding to the amount of current flowing. By performing the above steps in order by row, images can be displayed.

另外，圖41A所示的多個像素電路541例如可以採用圖41D所示的結構。 In addition, the plurality of pixel circuits 541 shown in FIG. 41A may adopt the structure shown in FIG. 41D, for example.

圖41D所示的像素電路541包括用作控制資料信號的寫入的選擇電晶體的電晶體552；用作驅動電晶體的電晶體554；電晶體556；電容元件562；以及發光元件572。在此，作為電晶體552，可以適當地使用實施方式2所示的電晶體100t、100w、111b、111e、111h、111k，作為電晶體554，可以適當地使用實施方式2所示 的電晶體100u、100x、111c、111f、111i、111m。 The pixel circuit 541 shown in FIG. 41D includes a transistor 552 used as a selection transistor for controlling writing of a data signal; a transistor 554 used for driving a transistor; a transistor 556; a capacitive element 562; and a light-emitting element 572. Here, as the transistor 552, the transistors 100t, 100w, 111b, 111e, 111h, and 111k described in Embodiment 2 can be suitably used, and as the transistor 554, the transistor 100u described in Embodiment 2 can be appropriately used. , 100x, 111c, 111f, 111i, 111m.

電晶體552的源極電極和汲極電極中的一方與被供應資料信號的佈線(信號線DL_n)電連接。再者，電晶體552的閘極電極與被供應閘極信號的佈線(掃描線GL_m)電連接。 One of the source electrode and the drain electrode of the transistor 552 is electrically connected to the wiring (signal line DL_n) to which the data signal is supplied. Furthermore, the gate electrode of the transistor 552 is electrically connected to the wiring (scan line GL_m) to which the gate signal is supplied.

電晶體552具有藉由被開啟或關閉來控制資料信號的寫入的功能。也就是說，電晶體552具有選擇電晶體的功能。 The transistor 552 has a function of controlling writing of data signals by being turned on or off. In other words, the transistor 552 has the function of selecting the transistor.

電晶體554的源極電極和汲極電極中的一方與被供應電位的佈線(下面稱為電位供應線VL_a1)電連接，電晶體554的源極電極和汲極電極中的另一方與發光元件572的一個電極電連接。再者，電晶體554的閘極電極與電晶體552的源極電極和汲極電極中的另一方及電容元件562的一個電極電連接。 One of the source electrode and the drain electrode of the transistor 554 is electrically connected to the wiring of the supplied potential (hereinafter referred to as a potential supply line VL_a1), and the other of the source electrode and the drain electrode of the transistor 554 is connected to the light-emitting element One electrode of 572 is electrically connected. In addition, the gate electrode of the transistor 554 is electrically connected to the other of the source electrode and the drain electrode of the transistor 552 and one electrode of the capacitive element 562.

電晶體556的源極電極和汲極電極中的一方與被供應資料的參考電位的佈線ML連接，電晶體556的源極電極和汲極電極的另一方與發光元件572的一個電極及電容元件562的另一個電極電連接。再者，電晶體556的閘極電極與被供應閘極信號的掃描線GL_m電連接。 One of the source electrode and the drain electrode of the transistor 556 is connected to the reference potential wiring ML of the supplied material, and the other of the source electrode and the drain electrode of the transistor 556 is connected to one electrode of the light emitting element 572 and the capacitor element The other electrode of 562 is electrically connected. Furthermore, the gate electrode of the transistor 556 is electrically connected to the scanning line GL_m to which the gate signal is supplied.

電晶體556具有調整流在發光元件572中的電流的功能。例如，在電晶體554的臨界電壓或場效移動率產生偏差時或在電晶體554劣化時，藉由監視流在與電晶體556的源極電極和汲極電極中的一方連接的佈線ML的電流，可以校正流在發光元件572的電流。佈線ML例 如可以被供應發光元件572的臨界電壓以下的電壓。 The transistor 556 has a function of adjusting the current flowing in the light-emitting element 572. For example, when the threshold voltage or field effect mobility of the transistor 554 is deviated or when the transistor 554 is degraded, by monitoring the flow of the wiring ML connected to one of the source electrode and the drain electrode of the transistor 556 The current can correct the current flowing in the light emitting element 572. The wiring ML can be supplied with a voltage below the critical voltage of the light emitting element 572, for example.

在本實施方式中，電晶體556的通道長度例如較佳為大於電晶體554的通道長度。注意，電晶體556既可以是單閘極結構，又可以與電晶體554同樣地是雙閘極結構。但是，當電晶體556是單閘極結構時，可以省略用來連接第一閘極電極與第二閘極電極的區域，所以可以縮小電晶體的面積。由此，可以增加像素的開口率，所以是較佳的。 In this embodiment, the channel length of the transistor 556 is preferably larger than the channel length of the transistor 554, for example. Note that the transistor 556 may have either a single gate structure or a double gate structure similar to the transistor 554. However, when the transistor 556 has a single gate structure, the area for connecting the first gate electrode and the second gate electrode can be omitted, so the area of the transistor can be reduced. Thus, the aperture ratio of the pixel can be increased, which is preferable.

電容元件562的一對電極中的一方與電晶體552的源極電極和汲極電極中的另一方以及電晶體554的閘極電極電連接，電容元件562的一對電極中的另一方與電晶體554的源極電極和汲極電極中的另一方、電晶體556的源極電極和汲極電極中的另一方及發光元件572的一個電極電連接。 One of the pair of electrodes of the capacitive element 562 is electrically connected to the other of the source electrode and the drain electrode of the transistor 552 and the gate electrode of the transistor 554, and the other of the pair of electrodes of the capacitive element 562 is electrically connected The other of the source electrode and the drain electrode of the crystal 554, the other of the source electrode and the drain electrode of the transistor 556, and one electrode of the light emitting element 572 are electrically connected.

發光元件572的一對電極中的一方與電晶體554的源極電極和汲極電極中的另一方、電容元件562的另一個電極及電晶體556的源極電極和汲極電極中的另一方電連接。另外，發光元件572的一對電極中的另一方與用作陰極的電位供應線VL_b電連接。 One of the pair of electrodes of the light emitting element 572 and the other of the source electrode and the drain electrode of the transistor 554, the other electrode of the capacitive element 562 and the other of the source electrode and the drain electrode of the transistor 556 Electrical connection. In addition, the other of the pair of electrodes of the light-emitting element 572 is electrically connected to the potential supply line VL_b serving as a cathode.

另外，設置有延伸在與佈線ML平行的方向的電位供應線VL_a2。電位供應線VL_a2與用作陽極線的電位供應線VL_a1連接，能夠降低電位供應線VL_a1、VL_a2的佈線電阻。其結果是，在使用大面積基板的顯示裝置中，能夠降低佈線的電壓下降，而可以降低顯示裝置 的亮度不均勻。 In addition, a potential supply line VL_a2 extending in a direction parallel to the wiring ML is provided. The potential supply line VL_a2 is connected to the potential supply line VL_a1 serving as an anode line, and the wiring resistance of the potential supply lines VL_a1 and VL_a2 can be reduced. As a result, in a display device using a large-area substrate, the voltage drop of the wiring can be reduced, and uneven brightness of the display device can be reduced.

電位供應線VL_a1、VL_a2和電位供應線VL_b中的一方被供應高電源電位VDD，另一方被供應低電源電位VSS。在圖41D所示的結構中，對電位供應線VL_a1、VL_a2供應高電源電位VDD，並對電位供應線VL_b供應低電源電位VSS。 One of the potential supply lines VL_a1, VL_a2 and the potential supply line VL_b is supplied with a high power supply potential VDD, and the other is supplied with a low power supply potential VSS. In the structure shown in FIG. 41D, a high power supply potential VDD is supplied to the potential supply lines VL_a1, VL_a2, and a low power supply potential VSS is supplied to the potential supply line VL_b.

在包括圖41D中的像素電路541的顯示裝置中，例如，藉由圖41A所示的閘極驅動器544a依次選擇各行的像素電路541，並使電晶體552開啟而寫入資料信號。 In the display device including the pixel circuit 541 in FIG. 41D, for example, the pixel circuits 541 in each row are sequentially selected by the gate driver 544a shown in FIG. 41A, and the transistor 552 is turned on to write a data signal.

被寫入資料的像素電路541在電晶體552被關閉時成為保持狀態。再者，由於電晶體552與電容元件562連接，因此能夠長期間保持寫入的資料。另外，由電晶體554控制流在源極電極與汲極電極間的電流的量，發光元件572發出對應於電流量的亮度的光。藉由按每行依次進行上述步驟，可以顯示影像。 When the transistor 552 is turned off, the pixel circuit 541 to which the data is written becomes the holding state. Furthermore, since the transistor 552 is connected to the capacitive element 562, the written data can be held for a long period of time. In addition, the amount of current flowing between the source electrode and the drain electrode is controlled by the transistor 554, and the light-emitting element 572 emits light of brightness corresponding to the amount of current. By performing the above steps in turn for each line, images can be displayed.

本實施方式所示的結構可以與其他實施方式所示的結構適當地組合而使用。 The structure shown in this embodiment can be used in appropriate combination with the structure shown in other embodiments.

實施方式8 Embodiment 8

在本實施方式中，使用圖42至圖44B說明使用在前面的實施方式中例示的電晶體的顯示裝置的一個例子。 In this embodiment, an example of a display device using the transistor illustrated in the previous embodiment will be described using FIGS. 42 to 44B.

圖42是示出顯示裝置的一個例子的俯視圖。圖42所示的顯示裝置700包括：設置在第一基板701上 的像素部702；設置在第一基板701上的源極驅動電路部704及閘極驅動電路部706；以圍繞像素部702、源極驅動電路部704及閘極驅動電路部706的方式設置的密封材料712；以及以與第一基板701對置的方式設置的第二基板705。注意，由密封材料712密封第一基板701及第二基板705。也就是說，像素部702、源極驅動電路部704及閘極驅動電路部706被第一基板701、密封材料712及第二基板705密封。注意，雖然在圖42中未圖示，但是在第一基板701與第二基板705之間設置有顯示元件。 42 is a plan view showing an example of a display device. The display device 700 shown in FIG. 42 includes: a pixel portion 702 provided on the first substrate 701; a source driving circuit portion 704 and a gate driving circuit portion 706 provided on the first substrate 701; A sealing material 712 provided to the source drive circuit portion 704 and the gate drive circuit portion 706; and a second substrate 705 provided to face the first substrate 701. Note that the first substrate 701 and the second substrate 705 are sealed by the sealing material 712. That is, the pixel portion 702, the source drive circuit portion 704, and the gate drive circuit portion 706 are sealed by the first substrate 701, the sealing material 712, and the second substrate 705. Note that although not shown in FIG. 42, a display element is provided between the first substrate 701 and the second substrate 705.

另外，在顯示裝置700中，在第一基板701上的不由密封材料712圍繞的區域中設置有電連接於像素部702、源極驅動電路部704及閘極驅動電路部706的FPC(Flexible printed circuit：撓性印刷電路)端子部708。此外，FPC716連接於FPC端子部708，並且藉由FPC716對像素部702、源極驅動電路部704及閘極驅動電路部706供應各種信號。另外，像素部702、源極驅動電路部704、閘極驅動電路部706以及FPC端子部708各與信號線710連接。由FPC716供應的各種信號是藉由信號線710供應到像素部702、源極驅動電路部704、閘極驅動電路部706以及FPC端子部708的。 In addition, in the display device 700, an FPC (Flexible printed sheet) electrically connected to the pixel portion 702, the source driving circuit portion 704, and the gate driving circuit portion 706 is provided in a region on the first substrate 701 that is not surrounded by the sealing material 712 circuit: flexible printed circuit) terminal portion 708. In addition, the FPC 716 is connected to the FPC terminal portion 708, and the FPC 716 supplies various signals to the pixel portion 702, the source drive circuit portion 704, and the gate drive circuit portion 706. In addition, the pixel portion 702, the source drive circuit portion 704, the gate drive circuit portion 706, and the FPC terminal portion 708 are each connected to the signal line 710. The various signals supplied by the FPC 716 are supplied to the pixel portion 702, the source driving circuit portion 704, the gate driving circuit portion 706, and the FPC terminal portion 708 via the signal line 710.

另外，也可以在顯示裝置700中設置多個閘極驅動電路部706。另外，作為顯示裝置700，雖然示出將源極驅動電路部704及閘極驅動電路部706形成在與像素部702相同的第一基板701上的例子，但是並不侷限於 該結構。例如，可以只將閘極驅動電路部706形成在第一基板701上，或者可以只將源極驅動電路部704形成在第一基板701上。此時，也可以採用將形成有源極驅動電路或閘極驅動電路等的基板(例如，由單晶半導體膜、多晶半導體膜形成的驅動電路基板)安裝於第一基板701的結構。另外，對另行形成的驅動電路基板的連接方法沒有特別的限制，而可以採用COG方法、打線接合方法等。 In addition, a plurality of gate drive circuit sections 706 may be provided in the display device 700. In addition, as the display device 700, although the example in which the source driving circuit portion 704 and the gate driving circuit portion 706 are formed on the same first substrate 701 as the pixel portion 702 is shown, it is not limited to this structure. For example, only the gate driving circuit portion 706 may be formed on the first substrate 701, or only the source driving circuit portion 704 may be formed on the first substrate 701. In this case, a structure in which a substrate (for example, a drive circuit substrate formed of a single crystal semiconductor film or a polycrystalline semiconductor film) forming a source drive circuit or a gate drive circuit may be mounted on the first substrate 701 may be adopted. In addition, there is no particular limitation on the connection method of the separately formed drive circuit board, and a COG method, wire bonding method, etc. may be used.

另外，顯示裝置700所包括的像素部702、源極驅動電路部704及閘極驅動電路部706包括多個的電晶體，作為該電晶體可以適用本發明的一個方式的半導體裝置的電晶體。 In addition, the pixel portion 702, the source drive circuit portion 704, and the gate drive circuit portion 706 included in the display device 700 include a plurality of transistors, and the transistors of the semiconductor device of one embodiment of the present invention can be applied as the transistors.

另外，顯示裝置700可以包括各種元件。該元件例如包括使用液晶元件、EL(電致發光)元件(包含有機和無機材料的EL元件、有機EL元件或無機EL元件)、LED(白色LED、紅色LED、綠色LED、藍色LED等)、電晶體(根據電流而發光的電晶體)、電子發射元件、電子墨水、電泳元件、柵光閥(GLV)、電漿顯示器(PDP)、使用微機電系統(MEMS)的顯示元件、數位微鏡裝置(DMD)、數位微快門(DMS)、MIRASOL(在日本註冊的商標)、IMOD(干涉測量調節)元件、快門方式的MEMS顯示元件、光干涉方式的MEMS顯示元件、電潤濕(electrowetting)元件、壓電陶瓷顯示器或碳奈米管的顯示元件等中的至少一個。除此之外，也可以具有藉由電作用或磁作用改變對比度、亮度、反射率、透射率等的顯示媒 體。作為使用EL元件的顯示裝置的一個例子，有EL顯示器等。作為使用電子發射元件的顯示裝置的一個例子，有場致發射顯示器(FED)或SED方式平面型顯示器(SED：Surface-conduction Electron-emitter Display：表面傳導電子發射顯示器)等。作為使用液晶元件的顯示裝置的一個例子，有液晶顯示器(透射式液晶顯示器、半透射式液晶顯示器、反射式液晶顯示器、直觀式液晶顯示器、投射式液晶顯示器)等。作為使用電子墨水或電泳元件的顯示裝置的一個例子，有電子紙等。注意，當實現半透射式液晶顯示器或反射式液晶顯示器時，使像素電極的一部分或全部具有反射電極的功能，即可。例如，使像素電極的一部分或全部包含鋁、銀等，即可。並且，此時也可以將SRAM等記憶體電路設置在反射電極下。由此，可以進一步降低功耗。 In addition, the display device 700 may include various elements. The element includes, for example, the use of a liquid crystal element, EL (electroluminescence) element (EL element containing organic and inorganic materials, organic EL element or inorganic EL element), LED (white LED, red LED, green LED, blue LED, etc.) , Transistors (transistors that emit light according to current), electron emitting elements, electronic ink, electrophoretic elements, grid light valves (GLV), plasma displays (PDP), display elements using micro-electromechanical systems (MEMS), digital micro Mirror device (DMD), digital micro shutter (DMS), MIRASOL (trademark registered in Japan), IMOD (interferometric adjustment) element, shutter-type MEMS display element, optical interference-type MEMS display element, electrowetting (electrowetting) ) At least one of an element, a piezoelectric ceramic display, a display element of a carbon nanotube, or the like. In addition to this, it is also possible to have a display medium that changes contrast, brightness, reflectance, transmittance, etc. by electrical or magnetic action. As an example of a display device using EL elements, there is an EL display or the like. As an example of a display device using an electron emission element, there is a field emission display (FED) or an SED system flat display (SED: Surface-conduction Electron-emitter Display). As an example of a display device using a liquid crystal element, there is a liquid crystal display (transmissive liquid crystal display, semi-transmissive liquid crystal display, reflective liquid crystal display, intuitive liquid crystal display, projection liquid crystal display), or the like. As an example of a display device using electronic ink or an electrophoretic element, there is electronic paper and the like. Note that when a transflective liquid crystal display or a reflective liquid crystal display is implemented, it is sufficient to make part or all of the pixel electrode function as a reflective electrode. For example, part or all of the pixel electrode may contain aluminum, silver, or the like. Also, at this time, a memory circuit such as SRAM may be provided under the reflective electrode. Thus, power consumption can be further reduced.

作為顯示裝置700的顯示方式，可以採用逐行掃描方式或隔行掃描方式等。此外，作為當進行彩色顯示時在像素中控制的顏色要素，不侷限於RGB(R表示紅色，G表示綠色，B表示藍色)這三種顏色。例如，可以由R像素、G像素、B像素及W(白色)像素的四個像素構成。或者，如PenTile排列，也可以由RGB中的兩個顏色構成一個顏色要素，並根據顏色要素選擇不同的兩個顏色來構成。或者可以對RGB追加黃色(yellow)、青色(cyan)、洋紅色(magenta)等中的一種以上的顏色。另外，各個顏色要素的點的顯示區域的大小可以不同。但是，所 公開的發明不侷限於彩色顯示的顯示裝置，而也可以應用於黑白顯示的顯示裝置。 As a display method of the display device 700, a progressive scanning method, an interlaced scanning method, or the like can be used. In addition, as color elements controlled in pixels when performing color display, it is not limited to three colors of RGB (R represents red, G represents green, and B represents blue). For example, it may be composed of four pixels of R pixels, G pixels, B pixels, and W (white) pixels. Alternatively, as in the PenTile arrangement, one color element may be composed of two colors in RGB, and different two colors may be selected according to the color element. Alternatively, one or more colors of yellow, cyan, magenta, etc. may be added to RGB. In addition, the size of the dot display area of each color element may be different. However, the disclosed invention is not limited to display devices of color display, but can also be applied to display devices of black and white display.

在本實施方式中，使用圖43A和圖43B及圖44A和圖44B說明作為顯示元件使用液晶元件及EL元件的結構。圖43A和圖43B是沿著圖42所示的點劃線Q-R的剖面圖，作為顯示元件使用液晶元件的結構。另外，圖44A和圖44B是沿著圖42所示的點劃線Q-R的剖面圖，作為顯示元件使用EL元件的結構。 In this embodiment mode, a structure in which a liquid crystal element and an EL element are used as a display element will be described using FIGS. 43A and 43B and FIGS. 44A and 44B. 43A and 43B are cross-sectional views along the dot-dash line Q-R shown in FIG. 42, and a structure using a liquid crystal element as a display element. In addition, FIGS. 44A and 44B are cross-sectional views along the dot-dash line Q-R shown in FIG. 42, and a structure in which an EL element is used as a display element.

圖43A及圖44A是作為第一基板701、第二基板705使用玻璃等的顯示裝置700，其機械強度高。另外，圖43B及圖44B是作為第一基板701、第二基板705使用塑膠等的顯示裝置700a，其具有撓性。由黏合劑720固定第一基板701與形成有電晶體750、752、電容元件790的絕緣膜719。另外，由黏合劑740固定第二基板705與形成有彩色膜736、遮光膜738等的絕緣膜739。 43A and 44A show a display device 700 using glass or the like as the first substrate 701 and the second substrate 705, and its mechanical strength is high. In addition, FIGS. 43B and 44B are display devices 700a using plastic or the like as the first substrate 701 and the second substrate 705, and have flexibility. The first substrate 701 and the insulating film 719 formed with the transistors 750 and 752 and the capacitor 790 are fixed by the adhesive 720. In addition, the second substrate 705 and the insulating film 739 formed with the color film 736, the light-shielding film 738, and the like are fixed by the adhesive 740.

下面，首先說明圖43A和圖43B與圖44A和圖44B所示的共同部分，接著說明不同的部分。 Next, the common parts shown in FIGS. 43A and 43B and FIGS. 44A and 44B will be described first, and then the different parts will be explained.

〈顯示裝置的共同部分的說明〉 <Description of common parts of display device>

圖43A至圖44B所示的顯示裝置700、700a包括：引繞佈線部711；像素部702；源極驅動電路部704；以及FPC端子部708。另外，引繞佈線部711包括信號線710。另外，像素部702包括電晶體750及電容元件790。另外，源極驅動電路部704包括電晶體752。 The display devices 700 and 700a shown in FIGS. 43A to 44B include: a routing wiring portion 711; a pixel portion 702; a source driving circuit portion 704; and an FPC terminal portion 708. In addition, the routing wiring portion 711 includes a signal line 710. In addition, the pixel portion 702 includes a transistor 750 and a capacitive element 790. In addition, the source drive circuit section 704 includes a transistor 752.

電晶體750及電晶體752可以適當地使用前面的實施方式所示的電晶體的結構。 For the transistor 750 and the transistor 752, the structure of the transistor shown in the previous embodiment can be used as appropriate.

在本實施方式中使用的電晶體包括高度純化且氧缺陷的形成被抑制的氧化物半導體膜。該電晶體可以降低關閉狀態下的電流值(關態電流值)。因此，可以延長影像信號等電信號的保持時間，在開啟電源的狀態下也可以延長寫入間隔。因此，可以降低更新工作的頻率，由此可以發揮抑制功耗的效果。 The transistor used in this embodiment includes an oxide semiconductor film that is highly purified and the formation of oxygen defects is suppressed. The transistor can reduce the current value in the off state (off-state current value). Therefore, the holding time of electrical signals such as video signals can be extended, and the writing interval can be extended even when the power is turned on. Therefore, the frequency of the update operation can be reduced, and thus the effect of suppressing power consumption can be exerted.

另外，在本實施方式中使用的電晶體能夠得到較高的場效移動率，因此能夠進行高速驅動。例如，藉由將這種能夠進行高速驅動的電晶體用於液晶顯示裝置，可以在同一基板上形成像素部的開關電晶體及用於驅動電路部的驅動電晶體。也就是說，因為作為驅動電路不需要另行使用由矽晶圓等形成的半導體裝置，所以可以縮減半導體裝置的構件數。另外，在像素部中也可以藉由使用能夠進行高速驅動的電晶體提供高品質的影像。 In addition, the transistor used in this embodiment can obtain a high field-effect mobility, and therefore can be driven at high speed. For example, by using such a transistor capable of high-speed driving for a liquid crystal display device, a switching transistor for a pixel portion and a driving transistor for a driving circuit portion can be formed on the same substrate. That is, since it is not necessary to separately use a semiconductor device formed of a silicon wafer or the like as the driving circuit, the number of components of the semiconductor device can be reduced. In addition, in the pixel portion, high-quality images can be provided by using transistors capable of high-speed driving.

另外，在圖43A和圖43B及圖44A和圖44B中，在電晶體750、電晶體752及電容元件790上設置有絕緣膜766及平坦化絕緣膜770。 In addition, in FIGS. 43A and 43B and FIGS. 44A and 44B, the insulating film 766 and the planarizing insulating film 770 are provided on the transistor 750, the transistor 752, and the capacitor 790.

作為絕緣膜766，可以使用與前面的實施方式所示的絕緣膜126同樣的材料及製造方法形成。另外，作為平坦化絕緣膜770，可以使用具有耐熱性的有機材料如聚醯亞胺樹脂、丙烯酸樹脂、聚醯亞胺醯胺樹脂、苯并環丁烯類樹脂、聚醯胺樹脂、環氧樹脂等。也可以藉由層疊 多個由這些材料形成的絕緣膜，形成平坦化絕緣膜770。另外，也可以採用不設置平坦化絕緣膜770的結構。 As the insulating film 766, the same material and manufacturing method as the insulating film 126 described in the previous embodiment can be used. In addition, as the planarizing insulating film 770, heat-resistant organic materials such as polyimide resin, acrylic resin, polyimide polyamide resin, benzocyclobutene-based resin, polyamide resin, epoxy Resin etc. The planarizing insulating film 770 may be formed by laminating a plurality of insulating films formed from these materials. In addition, a structure in which the planarization insulating film 770 is not provided may be adopted.

另外，信號線710與用作電晶體750、752的源極電極及汲極電極的導電膜在同一製程中形成。信號線710也可以使用用作電晶體750、752的閘極電極的導電膜。作為信號線710，例如，當使用包含銅元素的材料時，起因於佈線電阻的信號延遲等較少，而可以實現大螢幕的顯示。 In addition, the signal line 710 and the conductive film used as the source electrode and the drain electrode of the transistors 750 and 752 are formed in the same process. For the signal line 710, a conductive film used as a gate electrode of the transistors 750 and 752 may be used. As the signal line 710, for example, when a material containing a copper element is used, there is little signal delay due to wiring resistance, etc., and a large screen display can be realized.

另外，FPC端子部708包括連接電極760、異方性導電膜780及FPC716。連接電極760與用作電晶體750、752的源極電極及汲極電極的導電膜在同一製程中形成。另外，連接電極760與FPC716所包括的端子藉由異方性導電膜780電連接。 In addition, the FPC terminal portion 708 includes a connection electrode 760, an anisotropic conductive film 780, and an FPC 716. The connection electrode 760 and the conductive film used as the source electrode and the drain electrode of the transistors 750 and 752 are formed in the same process. In addition, the connection electrode 760 and the terminal included in the FPC 716 are electrically connected by the anisotropic conductive film 780.

另外，作為第一基板701及第二基板705，例如可以使用玻璃基板。另外，作為第一基板701及第二基板705，也可以使用具有撓性的基板。作為該具有撓性的基板，例如可以舉出塑膠基板等。 In addition, as the first substrate 701 and the second substrate 705, for example, a glass substrate can be used. In addition, as the first substrate 701 and the second substrate 705, a flexible substrate may be used. Examples of the flexible substrate include plastic substrates.

另外，在第一基板701與第二基板705之間設置有結構體778。結構體778是藉由選擇性地對絕緣膜進行蝕刻而得到的柱狀的間隔物，用來控制第一基板701與第二基板705之間的距離(液晶盒厚(cell gap))。另外，作為結構體778，也可以使用球狀的間隔物。 In addition, a structural body 778 is provided between the first substrate 701 and the second substrate 705. The structural body 778 is a columnar spacer obtained by selectively etching the insulating film, and is used to control the distance (cell gap) between the first substrate 701 and the second substrate 705. In addition, as the structural body 778, a spherical spacer may be used.

另外，在第二基板705一側，設置有用作黑矩陣的遮光膜738、用作濾色片的彩色膜736、與遮光膜 738及彩色膜736接觸的絕緣膜734。 In addition, on the second substrate 705 side, a light-shielding film 738 serving as a black matrix, a color film 736 serving as a color filter, and an insulating film 734 in contact with the light-shielding film 738 and the color film 736 are provided.

〈作為顯示元件使用液晶元件的顯示裝置的結構例子〉 <Configuration example of display device using liquid crystal element as display element>

圖43A和圖43B所示的顯示裝置700、700a包括液晶元件775。液晶元件775包括導電膜772、導電膜774及液晶層776。導電膜774被設置在第二基板705一側，並具有相對電極的功能。圖43A和圖43B所示的顯示裝置700、700a可以藉由施加到導電膜772及導電膜774的電壓改變液晶層776的配向狀態，由此控制光的透過及非透過而顯示影像。 The display devices 700 and 700a shown in FIGS. 43A and 43B include a liquid crystal element 775. The liquid crystal element 775 includes a conductive film 772, a conductive film 774, and a liquid crystal layer 776. The conductive film 774 is provided on the side of the second substrate 705 and has a function of an opposing electrode. The display devices 700 and 700a shown in FIGS. 43A and 43B can change the alignment state of the liquid crystal layer 776 by the voltage applied to the conductive film 772 and the conductive film 774, thereby controlling the transmission and non-transmission of light to display an image.

另外，導電膜772與用作電晶體750所包括的源極電極及汲極電極的導電膜連接。導電膜772被用作形成在平坦化絕緣膜770上的像素電極，即顯示元件的一個電極。另外，導電膜772具有反射電極的功能。圖43A和圖43B所示的顯示裝置700、700a是將外光由導電膜772反射並藉由彩色膜736來進行顯示的所謂反射式彩色液晶顯示裝置。 In addition, the conductive film 772 is connected to a conductive film used as a source electrode and a drain electrode included in the transistor 750. The conductive film 772 is used as a pixel electrode formed on the planarization insulating film 770, that is, one electrode of the display element. In addition, the conductive film 772 has the function of a reflective electrode. The display devices 700 and 700a shown in FIGS. 43A and 43B are so-called reflective color liquid crystal display devices that reflect external light from the conductive film 772 and display with the color film 736.

作為導電膜772，可以使用對可見光具有透光性的導電膜或對可見光具有反射性的導電膜。作為對可見光具有透光性的導電膜，例如，較佳為使用包含選自銦(In)、鋅(Zn)、錫(Sn)中的一種的材料。作為對可見光具有反射性的導電膜，例如，較佳為使用包含鋁或銀的材料。在本實施方式中，作為導電膜772使用對可見光具有反射性的導電膜。 As the conductive film 772, a conductive film that is translucent to visible light or a conductive film that is reflective to visible light can be used. As the conductive film having transparency to visible light, for example, it is preferable to use a material containing one selected from indium (In), zinc (Zn), and tin (Sn). As a conductive film that is reflective to visible light, for example, a material containing aluminum or silver is preferably used. In this embodiment, as the conductive film 772, a conductive film that is reflective to visible light is used.

另外，在圖43A和圖43B所示的顯示裝置700、700a中，像素部702的平坦化絕緣膜770的一部分中設置有凹凸。該凹凸例如可以藉由使用有機樹脂膜等形成平坦化絕緣膜770並對該有機樹脂膜的表面設置凹部或凸部而形成。另外，用作反射電極的導電膜772沿著上述凹凸形成。因此，當外光入射到導電膜772時，可以使光在導電膜772的表面漫反射，而可以提高可見度。 In addition, in the display devices 700 and 700 a shown in FIGS. 43A and 43B, irregularities are provided in a part of the planarization insulating film 770 of the pixel portion 702. The unevenness can be formed, for example, by forming a planarized insulating film 770 using an organic resin film or the like and providing concave portions or convex portions on the surface of the organic resin film. In addition, a conductive film 772 serving as a reflective electrode is formed along the above-mentioned irregularities. Therefore, when external light is incident on the conductive film 772, light can be diffusely reflected on the surface of the conductive film 772, and visibility can be improved.

注意，雖然作為圖43A和圖43B所示的顯示裝置700、700a例示了反射式彩色液晶顯示裝置，但並不侷限於此，例如，也可以將對可見光具有透光性的導電膜用於導電膜772，由此製造透射式彩色液晶顯示裝置。當顯示裝置為透射式彩色液晶顯示裝置時，也可以採用不設置平坦化絕緣膜770中的凹凸的結構。 Note that although the reflective color liquid crystal display device is exemplified as the display devices 700 and 700a shown in FIGS. 43A and 43B, it is not limited to this. For example, a conductive film having translucency to visible light may be used for conduction Film 772, thereby manufacturing a transmissive color liquid crystal display device. When the display device is a transmissive color liquid crystal display device, a structure in which unevenness in the planarization insulating film 770 is not provided may be adopted.

注意，雖然在圖43A和圖43B中未圖示，但是也可以分別在導電膜772、774的與液晶層776接觸的一側設置配向膜。另外，雖然在圖43A和圖43B中未圖示，但是可以適當地設置偏振構件、相位差構件、抗反射構件等光學構件(光學基板)等。例如，也可以使用利用偏振基板以及相位差基板的圓偏振。此外，作為光源，也可以使用背光、側光等。 Note that although not shown in FIGS. 43A and 43B, the alignment films may be provided on the sides of the conductive films 772 and 774 that are in contact with the liquid crystal layer 776, respectively. In addition, although not shown in FIGS. 43A and 43B, optical members (optical substrates) such as a polarizing member, a phase difference member, and an anti-reflection member may be appropriately provided. For example, circular polarization using a polarizing substrate and a phase difference substrate may also be used. In addition, as a light source, a backlight, side light, or the like can also be used.

當作為顯示元件使用液晶元件時，可以使用熱致液晶、低分子液晶、高分子液晶、高分子分散型液晶、鐵電液晶、反鐵電液晶等。這些液晶材料根據條件呈現出膽固醇相、層列相、立方相、手性向列相、各向同性 相等。 When a liquid crystal element is used as a display element, thermotropic liquid crystal, low molecular liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal, ferroelectric liquid crystal, antiferroelectric liquid crystal, or the like can be used. These liquid crystal materials exhibit a cholesterol phase, a smectic phase, a cubic phase, a chiral nematic phase, and isotropy equal according to the conditions.

另外，在採用橫向電場方式的情況下，也可以使用不需要配向膜的呈現藍相的液晶。藍相是液晶相的一種，當使膽固醇相液晶的溫度上升時，在即將從膽固醇相轉變到各向同性相之前出現。由於藍相只出現在較窄的溫度範圍內，所以為了改善溫度範圍而將混合有幾wt.%以上的手性試劑的液晶組成物用於液晶層。包含呈現藍相的液晶和手性試劑的液晶組成物因為反應時間短且具有光學各向同性，所以不需要配向處理且視角依賴性小。另外，因不需要設置配向膜而不需要摩擦處理，因此可以防止由於摩擦處理而引起的靜電破壞，由此可以降低製程中的液晶顯示裝置的不良和破損。 In addition, when the lateral electric field method is adopted, a blue phase liquid crystal that does not require an alignment film may be used. The blue phase is a type of liquid crystal phase, and when the temperature of the cholesterol phase liquid crystal is increased, it appears immediately before the transition from the cholesterol phase to the isotropic phase. Since the blue phase only appears in a narrow temperature range, in order to improve the temperature range, a liquid crystal composition mixed with a chiral agent of several wt.% or more is used for the liquid crystal layer. Since a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short reaction time and has optical isotropy, alignment treatment is not required and viewing angle dependence is small. In addition, since there is no need to provide an alignment film and no rubbing treatment is required, it is possible to prevent electrostatic damage due to rubbing treatment, thereby reducing defects and breakage of the liquid crystal display device during the manufacturing process.

另外，當作為顯示元件使用液晶元件時，可以採用TN(Twisted Nematic：扭曲向列)模式、IPS(In-Plane-Switching：平面內切換)模式、FFS(Fringe Field Switching：邊緣電場切換)模式、ASM(Axially Symmetric aligned Micro-cell：軸對稱排列微單元)模式、OCB(Optical Compensated Birefringence：光學補償彎曲)模式、FLC(Ferroelectric Liquid Crystal：鐵電液晶)模式、AFLC(Anti Ferroelectric Liquid Crystal：反鐵電液晶)模式等。 In addition, when a liquid crystal element is used as a display element, TN (Twisted Nematic: Twisted Nematic) mode, IPS (In-Plane-Switching) mode, FFS (Fringe Field Switching) mode, ASM (Axially Symmetric aligned Micro-cell) mode, OCB (Optical Compensated Birefringence) mode, FLC (Ferroelectric Liquid Crystal: ferroelectric liquid crystal) mode, AFLC (Anti Ferroelectric Liquid Crystal: anti-iron Electric LCD) mode, etc.

另外，也可以使用常黑型液晶顯示裝置，例如採用垂直配向(VA)模式的透射式液晶顯示裝置。作為垂直配向模式，可以舉出幾個例子，例如可以使用 MVA(Multi-Domain Vertical Alignment：多象限垂直配向)模式、PVA(Patterned Vertical Alignment：垂直配向構型)模式、ASV(Advanced Super View：高級超視覺)模式等。 In addition, a normally black liquid crystal display device may be used, for example, a transmissive liquid crystal display device adopting a vertical alignment (VA) mode. As the vertical alignment mode, several examples can be given. For example, MVA (Multi-Domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment) mode, ASV (Advanced Super View: Advanced Super Vision) mode, etc.

〈作為顯示元件使用發光元件的顯示裝置〉 <Display device using light-emitting element as display element>

圖44A和圖44B所示的顯示裝置700、700a包括發光元件782。發光元件782包括導電膜784、EL層786及導電膜788。在圖44A和圖44B所示的顯示裝置700、700a中，藉由使發光元件782所包括的EL層786發光，可以顯示影像。 The display devices 700 and 700a shown in FIGS. 44A and 44B include a light emitting element 782. The light emitting element 782 includes a conductive film 784, an EL layer 786, and a conductive film 788. In the display devices 700 and 700a shown in FIGS. 44A and 44B, by making the EL layer 786 included in the light emitting element 782 emit light, an image can be displayed.

另外，導電膜784與用作電晶體750所包括的源極電極及汲極電極的導電膜連接。導電膜784被用作形成在平坦化絕緣膜770上的像素電極，即顯示元件的一個電極。作為導電膜784，可以使用對可見光具有透光性的導電膜或對可見光具有反射性的導電膜。作為對可見光具有透光性的導電膜，例如，較佳為使用包含選自銦(In)、鋅(Zn)、錫(Sn)中的一種的材料。作為對可見光具有反射性的導電膜，例如，較佳為使用包含鋁或銀的材料。 In addition, the conductive film 784 is connected to a conductive film used as a source electrode and a drain electrode included in the transistor 750. The conductive film 784 is used as a pixel electrode formed on the planarization insulating film 770, that is, one electrode of the display element. As the conductive film 784, a conductive film that is transparent to visible light or a conductive film that is reflective to visible light can be used. As the conductive film having transparency to visible light, for example, it is preferable to use a material containing one selected from indium (In), zinc (Zn), and tin (Sn). As a conductive film that is reflective to visible light, for example, a material containing aluminum or silver is preferably used.

另外，圖44A和圖44B所示的顯示裝置700、700a中設置有平坦化絕緣膜770及導電膜784上的絕緣膜730。絕緣膜730覆蓋導電膜784的一部分。注意，發光元件782具有頂部發射結構。因此，導電膜788具有透光性，而使EL層786所發射的光透過。注意，雖 然在本實施方式中例示頂部發射結構，但是並不侷限於此。例如，也可以適用對導電膜784一側發射光的底部發射結構或對導電膜784及導電膜788的兩者發射光的雙面發射結構。 In addition, the display devices 700 and 700 a shown in FIGS. 44A and 44B are provided with an insulating film 730 on the planarizing insulating film 770 and the conductive film 784. The insulating film 730 covers a part of the conductive film 784. Note that the light emitting element 782 has a top emission structure. Therefore, the conductive film 788 has translucency, and the light emitted by the EL layer 786 is transmitted. Note that although the top emission structure is exemplified in this embodiment, it is not limited to this. For example, a bottom emission structure that emits light to one side of the conductive film 784 or a double-sided emission structure that emits light to both of the conductive film 784 and the conductive film 788 may be applied.

另外，在與發光元件782重疊的位置設置有彩色膜736，並且在與絕緣膜730重疊的位置、引繞佈線部711以及源極驅動電路部704中設置有遮光膜738。彩色膜736及遮光膜738被絕緣膜734覆蓋。發光元件782與絕緣膜734之間填充有密封膜732。注意，雖然在圖44A和圖44B所示的顯示裝置700、700a中例示出設置彩色膜736的結構，但是不侷限於此。例如，在藉由分別塗布來形成EL層786時，也可以採用不設置彩色膜736的結構。 In addition, a color film 736 is provided at a position overlapping the light emitting element 782, and a light shielding film 738 is provided at a position overlapping the insulating film 730, the routing wiring portion 711, and the source driving circuit portion 704. The color film 736 and the light-shielding film 738 are covered with an insulating film 734. A sealing film 732 is filled between the light emitting element 782 and the insulating film 734. Note that although the display devices 700 and 700 a shown in FIGS. 44A and 44B illustrate the structure in which the color film 736 is provided, it is not limited to this. For example, when the EL layer 786 is formed by separate coating, a structure in which the color film 736 is not provided may be adopted.

本實施方式所示的結構可以與其他實施方式所示的結構適當地組合而實施。 The structure shown in this embodiment can be implemented in appropriate combination with the structure shown in other embodiments.

實施方式9 Embodiment 9

在本實施方式中，說明使用本發明的一個方式的半導體裝置的發光裝置的一個方式。注意，在本實施方式中，使用圖45說明發光裝置的像素部的結構。 In this embodiment, an embodiment of a light-emitting device using the semiconductor device of one embodiment of the present invention will be described. Note that in this embodiment, the structure of the pixel portion of the light-emitting device will be described using FIG. 45.

在圖45中，在第一基板502上形成有多個FET500，並且各FET500與各發光元件(504R、504G、504B、504W)電連接。明確而言，各FET500與發光元件所包括的第一導電膜506電連接。注意，各發光元件(504R、504G、504B、504W)由第一導電膜506、第二導電膜507、EL層510以及第三導電膜512構成。 In FIG. 45, a plurality of FETs 500 are formed on the first substrate 502, and each FET 500 is electrically connected to each light-emitting element (504R, 504G, 504B, 504W). Specifically, each FET 500 is electrically connected to the first conductive film 506 included in the light-emitting element. Note that each light-emitting element (504R, 504G, 504B, 504W) is composed of a first conductive film 506, a second conductive film 507, an EL layer 510, and a third conductive film 512.

另外，在與各發光元件(504R、504G、504B、504W)相對的位置上分別設置有彩色層(514R、514G、514B、514W)。注意，以與第二基板516接觸的方式設置有彩色層(514R、514G、514B、514W)。另外，在第一基板502與第二基板516之間設置有封止膜518。作為封止膜518，例如可以使用玻璃粉等玻璃材料或者兩液混合型樹脂等在常溫下固化的固化樹脂、光硬化性樹脂、熱固性樹脂等樹脂材料。 In addition, color layers (514R, 514G, 514B, and 514W) are provided at positions facing the light-emitting elements (504R, 504G, 504B, and 504W), respectively. Note that the color layers (514R, 514G, 514B, 514W) are provided in contact with the second substrate 516. In addition, a sealing film 518 is provided between the first substrate 502 and the second substrate 516. As the sealing film 518, for example, resin materials such as a glass material such as glass frit or a two-liquid mixed resin cured at room temperature, a photocurable resin, a thermosetting resin, or the like can be used.

另外，以覆蓋相鄰的第一導電膜506及第二導電膜507的端部的方式設置有分隔壁508。另外，在分隔壁508上形成有結構體509。注意，第一導電膜506具有反射電極的功能和發光元件的陽極的功能。此外，第二導電膜507具有調整各發光元件的光程長的功能。另外，在第二導電膜507上形成有EL層510，並在EL層510上形成有第三導電膜512。此外，第三導電膜512具有半透射.半反射電極的功能和發光元件的陰極的功能。另外，結構體509設置於發光元件與彩色層之間且具有間隔物的功能。 In addition, a partition wall 508 is provided so as to cover the ends of the adjacent first conductive film 506 and second conductive film 507. In addition, a structure 509 is formed on the partition wall 508. Note that the first conductive film 506 has the function of a reflective electrode and the function of an anode of a light-emitting element. In addition, the second conductive film 507 has a function of adjusting the optical path length of each light-emitting element. In addition, an EL layer 510 is formed on the second conductive film 507, and a third conductive film 512 is formed on the EL layer 510. In addition, the third conductive film 512 has a function of a semi-transmissive and semi-reflective electrode and a function of a cathode of a light-emitting element. In addition, the structure 509 is provided between the light emitting element and the color layer and has a function of a spacer.

另外，EL層510可以被各發光元件(504R、504G、504B、504W)共同使用。注意，各發光元件(504R、504G、504B、504W)具有由第一導電膜506和第三導電膜512使來自EL層510的發光共振的所謂光學微 共振腔(也稱為微腔)結構，即便具有相同的EL層510也可以藉由使不同的波長的光譜變窄而提取。明確而言，在各發光元件(504R、504G、504B、504W)中，藉由分別調整設置於EL層510的下方的第二導電膜507的厚度，使從EL層510得到的光譜成為所希望的發射光譜，而能夠得到高色純度的發光。因此，藉由採用圖45所示的結構，不需要EL層的分別塗布的製程，從而能夠實現高清晰化。 In addition, the EL layer 510 can be commonly used by each light-emitting element (504R, 504G, 504B, 504W). Note that each light-emitting element (504R, 504G, 504B, 504W) has a so-called optical micro-resonance that resonates the light emission from the EL layer 510 by the first conductive film 506 and the third conductive film 512 The resonant cavity (also called microcavity) structure, even if having the same EL layer 510, can be extracted by narrowing the spectrum of different wavelengths. Specifically, in each light-emitting element (504R, 504G, 504B, 504W), by adjusting the thickness of the second conductive film 507 provided below the EL layer 510, the spectrum obtained from the EL layer 510 becomes desired The emission spectrum can be obtained with high color purity. Therefore, by adopting the structure shown in FIG. 45, a process of separately coating the EL layer is not required, and high definition can be achieved.

另外，在圖45所示的發光裝置包括彩色層(也稱為濾色片)，因此可以使所希望的發射光譜的光發射。因此，藉由組合微腔結構與濾色片，能夠得到色純度更高的發光。明確而言，調整發光元件504R的光程長以能夠得到紅色發光，而經由彩色層514R向箭頭方向發射出紅色發光。調整發光元件504G的光程長以能夠得到綠色發光，而經由彩色層514G向箭頭方向發射出綠色發光。調整發光元件504B的光程長以能夠得到藍色發光，而經由彩色層514B向箭頭方向發射出藍色發光。調整發光元件504W的光程長以能夠得到白色發光，而經由彩色層514W向箭頭方向發射出白色發光。 In addition, the light-emitting device shown in FIG. 45 includes a color layer (also referred to as a color filter), so that light of a desired emission spectrum can be emitted. Therefore, by combining the microcavity structure and the color filter, luminescence with higher color purity can be obtained. Specifically, the optical path length of the light emitting element 504R is adjusted to obtain red light emission, and red light emission is emitted in the direction of the arrow through the color layer 514R. The optical path length of the light emitting element 504G is adjusted to obtain green light emission, and green light emission is emitted in the direction of the arrow through the color layer 514G. The optical path length of the light emitting element 504B is adjusted to obtain blue light emission, and blue light emission is emitted in the direction of the arrow through the color layer 514B. The optical path length of the light emitting element 504W is adjusted to obtain white light emission, and white light emission is emitted in the direction of the arrow through the color layer 514W.

注意，各發光元件的光程長的調整方法不侷限於此。例如，在各發光元件中，也可以藉由調整EL層510的厚度來調整光程長。 Note that the method of adjusting the optical path length of each light-emitting element is not limited to this. For example, in each light-emitting element, the optical path length may be adjusted by adjusting the thickness of the EL layer 510.

另外，彩色層(514R、514G、514B)只要具有使特定的波長區的光透過的功能即可，例如可以使用使紅色的波長區的光透過的紅色(R)濾色片、使綠色的波長區的光透過的綠色(G)濾色片以及使藍色的波長區的光透過的藍色(B)濾色片等。另外，作為彩色層514W例如可以使用不含有顏料等的丙烯酸類樹脂材料等。作為彩色層(514R、514G、514B、514W)可以使用各種材料並藉由印刷法、噴墨法、使用光微影技術的蝕刻法等形成。 In addition, the color layer (514R, 514G, 514B) only needs to have a function of transmitting light in a specific wavelength region. For example, a red (R) color filter that transmits light in the red wavelength region and a wavelength of green color can be used. A green (G) color filter that transmits light in the region, a blue (B) color filter that transmits light in the blue wavelength region, and the like. In addition, as the color layer 514W, for example, an acrylic resin material containing no pigment or the like can be used. As the color layer (514R, 514G, 514B, 514W), various materials can be used and formed by a printing method, an inkjet method, an etching method using photolithography, and the like.

作為第一導電膜506，例如可以使用反射率高(可見光的反射率為40%以上且100%以下，較佳為70%以上且100%以下)的金屬膜。作為第一導電膜506，可以使用鋁、銀或包含這些金屬材料的合金(例如，銦與鈀與銅的合金)的單層或疊層形成。 As the first conductive film 506, for example, a metal film having a high reflectance (reflectance of visible light of 40% or more and 100% or less, preferably 70% or more and 100% or less) can be used. As the first conductive film 506, a single layer or a stacked layer of aluminum, silver, or an alloy containing these metal materials (for example, an alloy of indium, palladium, and copper) can be used.

另外，作為第二導電膜507，例如可以使用導電金屬氧化物來形成。作為導電金屬氧化物，可以使用氧化銦、氧化錫、氧化鋅、銦錫氧化物(Indium Tin Oxide，還稱為ITO)、銦鋅氧化物(Indium Zinc Oxide)或者在這些金屬氧化物材料中含有氧化矽、氧化鎢的材料。藉由設置第二導電膜507，能夠抑制在後面形成的EL層510與第一導電膜506之間形成絕緣膜，所以是較佳的。另外，也可以在第一導電膜506的下方形成用作第二導電膜507的導電金屬氧化物。 In addition, as the second conductive film 507, for example, a conductive metal oxide can be used. As the conductive metal oxide, indium oxide, tin oxide, zinc oxide, indium tin oxide (Indium Tin Oxide, also known as ITO), indium zinc oxide (Indium Zinc Oxide) or these metal oxide materials can be used Material of silicon oxide and tungsten oxide. By providing the second conductive film 507, it is possible to suppress the formation of an insulating film between the EL layer 510 formed later and the first conductive film 506, which is preferable. In addition, a conductive metal oxide serving as the second conductive film 507 may be formed under the first conductive film 506.

此外，作為第三導電膜512，使用具有反射性的導電材料和具有透光性的導電材料來形成，對可見光的反射率較佳為20%以上且80%以下，更佳為40%以上且70%以下。作為第三導電膜512，例如將銀、鎂或包含這 些金屬材料的合金等形成得薄(例如，10nm以下)，然後形成可用於第二導電膜507的導電金屬氧化物即可。 In addition, the third conductive film 512 is formed using a reflective conductive material and a light-transmitting conductive material, and the reflectance to visible light is preferably 20% or more and 80% or less, more preferably 40% or more and Below 70%. As the third conductive film 512, for example, silver, magnesium, or an alloy containing these metal materials is formed thin (for example, 10 nm or less), and then a conductive metal oxide that can be used for the second conductive film 507 may be formed.

在上面所說明的結構中，採用了從第二基板516一側提取發光的結構(頂部發射結構)，但也可以採用從形成有FET500的第一基板501一側提取光的結構(底部發射結構)或從第一基板501一側和第二基板516一側的兩者提取光的結構(雙面發射結構)。在採用底部發射結構的情況下，例如將彩色層(514R、514G、514B、514W)形成於第一導電膜506的下方即可。注意，作為發射光的一側的基板可以使用具有透光性的基板，作為不發射光的一側的基板可以使用具有透光性的基板及具有遮光性的基板。 In the structure described above, a structure that extracts light emission from the second substrate 516 side (top emission structure) is used, but a structure that extracts light from the first substrate 501 side where the FET 500 is formed (bottom emission structure) may also be used ) Or a structure that extracts light from both the first substrate 501 side and the second substrate 516 side (double-sided emission structure). When the bottom emission structure is adopted, for example, a color layer (514R, 514G, 514B, 514W) may be formed under the first conductive film 506. Note that, as the substrate on the side that emits light, a substrate having translucency can be used, and as the substrate on the side that does not emit light, a substrate with translucency and a substrate with light-shielding properties can be used.

另外，雖然在圖45中例示了發光元件為4種顏色(紅色(R)、綠色(G)、藍色(B)、白色(W))的結構，但不侷限於此。例如也可以採用發光元件為三種顏色(紅色(R)、綠色(G)、藍色(B))的結構。 In addition, although the structure in which the light-emitting element has four colors (red (R), green (G), blue (B), and white (W)) is illustrated in FIG. 45, it is not limited to this. For example, a structure in which the light-emitting element has three colors (red (R), green (G), and blue (B)) may be adopted.

實施方式10 Embodiment 10

在本實施方式中，參照圖46以及圖47A至圖47G對可以使用本發明的一個方式的半導體裝置的顯示模組及電子裝置進行說明。 In this embodiment, a display module and an electronic device in which a semiconductor device of one embodiment of the present invention can be used will be described with reference to FIGS. 46 and 47A to 47G.

圖46所示的顯示模組8000在上蓋8001與下蓋8002之間包括連接於FPC8003的觸控面板8004、連接於FPC8005的顯示面板8006、背光8007、框架8009、印 刷基板8010、電池8011。 The display module 8000 shown in FIG. 46 includes a touch panel 8004 connected to the FPC 8003, a display panel 8006 connected to the FPC 8005, a backlight 8007, a frame 8009, a printed board 8010, and a battery 8011 between the upper cover 8001 and the lower cover 8002.

例如可以將本發明的一個方式的半導體裝置用於顯示面板8006。 For example, the semiconductor device of one embodiment of the present invention can be used for the display panel 8006.

上蓋8001及下蓋8002可以根據觸控面板8004及顯示面板8006的尺寸可以適當地改變形狀或尺寸。 The upper cover 8001 and the lower cover 8002 can be appropriately changed in shape or size according to the sizes of the touch panel 8004 and the display panel 8006.

觸控面板8004能夠是電阻膜式觸控面板或靜電容量式觸控面板，並且能夠被形成為與顯示面板8006重疊。此外，也可以使顯示面板8006的相對基板(密封基板)具有觸控面板的功能。另外，也可以在顯示面板8006的各像素內設置光感測器，而形成光學觸控面板。 The touch panel 8004 can be a resistive film type touch panel or an electrostatic capacity type touch panel, and can be formed to overlap the display panel 8006. In addition, the counter substrate (sealing substrate) of the display panel 8006 may have a touch panel function. In addition, an optical sensor may be provided in each pixel of the display panel 8006 to form an optical touch panel.

背光8007具有光源8008。注意，雖然在圖46中例示出在背光8007上配置光源8008的結構，但是不侷限於此。例如，可以在背光8007的端部設置光源8008，並使用光擴散板。當使用有機EL元件等自發光型發光元件時，或者當使用反射式面板時，可以採用不設置背光8007的結構。 The backlight 8007 has a light source 8008. Note that although FIG. 46 illustrates a configuration in which the light source 8008 is arranged on the backlight 8007, it is not limited to this. For example, a light source 8008 may be provided at the end of the backlight 8007, and a light diffusion plate may be used. When a self-luminous light-emitting element such as an organic EL element is used, or when a reflective panel is used, a structure in which the backlight 8007 is not provided may be adopted.

框架8009除了具有保護顯示面板8006的功能以外還具有用來遮斷因印刷基板8010的工作而產生的電磁波的電磁屏蔽的功能。此外，框架8009也可以具有放熱板的功能。 In addition to the function of protecting the display panel 8006, the frame 8009 has an electromagnetic shielding function for blocking electromagnetic waves generated by the operation of the printed board 8010. In addition, the frame 8009 may also have the function of a heat radiation plate.

印刷基板8010具有電源電路以及用來輸出視訊信號及時脈信號的信號處理電路。作為對電源電路供應電力的電源，既可以採用外部的商業電源，又可以採用另 行設置的電池8011的電源。當使用商用電源時，可以省略電池8011。 The printed board 8010 has a power circuit and a signal processing circuit for outputting video signals and clock signals. As a power supply for supplying power to the power supply circuit, either an external commercial power supply or a power supply of a battery 8011 provided separately may be used. When using a commercial power supply, the battery 8011 can be omitted.

此外，在顯示模組8000中還可以設置偏光板、相位差板、稜鏡片等構件。 In addition, the display module 8000 may also be provided with members such as polarizing plates, phase difference plates, and thin films.

圖47A至圖47D是示出電子裝置的圖。這些電子裝置可以包括外殼600、顯示部601、揚聲器603、LED燈604、操作鍵605(包括電源開關或操作開關)、連接端子606、感測器607(它具有測量如下因素的功能：力、位移、位置、速度、加速度、角速度、轉速、距離、光、液、磁、溫度、化學物質、聲音、時間、硬度、電場、電流、電壓、電力、輻射線、流量、濕度、傾斜度、振動、氣味或紅外線)、麥克風608等。 47A to 47D are diagrams showing electronic devices. These electronic devices may include a housing 600, a display portion 601, a speaker 603, an LED lamp 604, an operation key 605 (including a power switch or an operation switch), a connection terminal 606, and a sensor 607 (which has functions of measuring the following factors: force, Displacement, position, speed, acceleration, angular velocity, speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, tilt, vibration , Odor or infrared), microphone 608, etc.

圖47A示出移動電腦，該移動電腦除了上述以外還可以包括開關609、紅外線埠620等。圖47B示出具備儲存介質的可攜式影像再現裝置(例如DVD再現裝置)，該可攜式影像再現裝置除了上述以外還可以包括第二顯示部602、儲存介質讀取部621等。圖47C示出電視接收機，該電視接收機除了上述以外還可以包括調諧器、影像處理部等。圖47D示出可攜式電視接收機，該可攜式電視接收機除了上述以外還可以包括能夠收發信號的充電器627等。 FIG. 47A shows a mobile computer, which may include a switch 609, an infrared port 620, and the like in addition to the above. FIG. 47B shows a portable image reproduction device (for example, a DVD reproduction device) equipped with a storage medium. The portable image reproduction device may include a second display unit 602, a storage medium reading unit 621, and the like in addition to the above. FIG. 47C shows a television receiver which may include a tuner, a video processing unit, etc. in addition to the above. FIG. 47D shows a portable television receiver which may include a charger 627 and the like capable of transmitting and receiving signals in addition to the above.

圖47E至圖47G示出能夠折疊的可攜式資訊終端610。圖47E示出展開狀態的可攜式資訊終端610。圖47F示出從展開狀態和折疊狀態中的一個狀態變為另一 個狀態的中途的狀態的可攜式資訊終端610。圖47G示出折疊狀態的可攜式資訊終端610。可攜式資訊終端610在折疊狀態下可攜性好，在展開狀態下因為具有無縫拼接的較大的顯示區域所以顯示一覽性強。 47E to 47G illustrate a portable information terminal 610 that can be folded. FIG. 47E shows the portable information terminal 610 in an expanded state. Fig. 47F shows the portable information terminal 610 from the unfolded state and the folded state to the halfway state of the other state. 47G shows the portable information terminal 610 in a folded state. The portable information terminal 610 has good portability in the folded state, and in the expanded state has a large display area for seamless splicing, so the display is strong.

顯示部612由鉸鏈613所連接的三個外殼615來支撐。藉由鉸鏈613使兩個外殼615之間彎折，可以從可攜式資訊終端610的展開狀態可逆性地變為折疊狀態。可以將使用本發明的一個方式製造的顯示裝置用於顯示部612。例如，可以使用能夠以1mm以上且150mm以下的曲率半徑彎曲的顯示裝置。 The display portion 612 is supported by three housings 615 connected by a hinge 613. By bending the two housings 615 by the hinge 613, the unfolded state of the portable information terminal 610 can be reversibly changed to the folded state. A display device manufactured using one aspect of the present invention can be used for the display portion 612. For example, a display device that can be bent with a radius of curvature of 1 mm or more and 150 mm or less can be used.

圖47A至圖47G所示的電子裝置可以具有各種功能。例如，可以具有如下功能：將各種資訊(靜態影像、動態影像、文字影像等)顯示在顯示部上；觸控面板；顯示日曆、日期或時刻等；藉由利用各種軟體(程式)控制處理；進行無線通訊；藉由利用無線通訊功能來連接到各種電腦網路；藉由利用無線通訊功能，進行各種資料的發送或接收；讀出儲存在儲存介質中的程式或資料來將其顯示在顯示部上等。再者，在具有多個顯示部的電子裝置中，可以具有如下功能：一個顯示部主要顯示影像資訊，而另一個顯示部主要顯示文字資訊；或者，在多個顯示部上顯示考慮到視差的影像來顯示立體影像等。再者，在具有影像接收部的電子裝置中，可以具有如下功能：拍攝靜態影像；拍攝動態影像；對所拍攝的影像進行自動或手動校正；將所拍攝的影像儲存在儲存介質(外部或內置 於相機)中；將所拍攝的影像顯示在顯示部上等。注意，圖47A至圖47G所示的電子裝置可具有的功能不侷限於上述功能，而可以具有各種各樣的功能。 The electronic device shown in FIGS. 47A to 47G may have various functions. For example, it may have the following functions: display various information (still images, moving images, text images, etc.) on the display unit; touch panel; display calendar, date, or time, etc.; control processing by using various software (programs); Conduct wireless communication; connect to various computer networks by using the wireless communication function; send or receive various data by using the wireless communication function; read out programs or data stored in the storage medium to display it on the display Superb. Furthermore, in an electronic device having multiple display sections, it may have the following functions: one display section mainly displays image information, and the other display section mainly displays text information; Images to display stereoscopic images, etc. Furthermore, in an electronic device with an image receiving section, it can have the following functions: shooting still images; shooting dynamic images; automatically or manually correcting the captured images; storing the captured images in a storage medium (external or internal In the camera); display the captured image on the display, etc. Note that the functions that the electronic device shown in FIGS. 47A to 47G can have are not limited to the above-mentioned functions, but can have various functions.

本實施方式所述的電子裝置的特徵在於具有用來顯示某些資訊的顯示部。本發明的一個方式的半導體裝置也可以應用不包括顯示部的電子裝置。 The electronic device described in this embodiment is characterized by having a display section for displaying certain information. The semiconductor device of one embodiment of the present invention may be applied to an electronic device that does not include a display unit.

本實施方式所示的結構可以與其他實施方式所示的結構適當地組合而實施。 The structure shown in this embodiment can be implemented in appropriate combination with the structure shown in other embodiments.

100g‧‧‧電晶體 100g‧‧‧transistor

100h‧‧‧電晶體 100h‧‧‧transistor

101‧‧‧基板 101‧‧‧ substrate

104‧‧‧絕緣膜 104‧‧‧Insulation film

105a‧‧‧通道區域 105a‧‧‧channel area

105b‧‧‧低電阻區域 105b‧‧‧Low resistance area

105c‧‧‧低電阻區域 105c‧‧‧Low resistance area

106a‧‧‧通道區域 106a‧‧‧Channel area

106b‧‧‧低電阻區域 106b‧‧‧Low resistance area

106c‧‧‧低電阻區域 106c‧‧‧Low resistance area

107‧‧‧多層膜 107‧‧‧Multilayer film

107a‧‧‧通道區域 107a‧‧‧Channel area

107b‧‧‧低電阻區域 107b‧‧‧Low resistance area

107c‧‧‧低電阻區域 107c‧‧‧Low resistance area

108‧‧‧氧化物半導體膜 108‧‧‧Oxide semiconductor film

108a‧‧‧通道區域 108a‧‧‧Channel area

108b‧‧‧低電阻區域 108b‧‧‧Low resistance area

108c‧‧‧低電阻區域 108c‧‧‧Low resistance area

116‧‧‧絕緣膜 116‧‧‧Insulation film

117‧‧‧絕緣膜 117‧‧‧Insulation film

119‧‧‧導電膜 119‧‧‧ conductive film

120‧‧‧導電膜 120‧‧‧conductive film

126‧‧‧絕緣膜 126‧‧‧Insulation film

127‧‧‧絕緣膜 127‧‧‧Insulation film

134‧‧‧導電膜 134‧‧‧ conductive film

135‧‧‧導電膜 135‧‧‧ conductive film

136‧‧‧導電膜 136‧‧‧ conductive film

137‧‧‧導電膜 137‧‧‧ conductive film

162‧‧‧氮化物絕緣膜 162‧‧‧Nitride insulating film

Claims (37)

一種半導體裝置，其包含：第一電晶體與第二電晶體，該第一電晶體與該第二電晶體各在第一絕緣膜之上；該第一電晶體包含：第一氧化物半導體膜；第二氧化物半導體膜，其在該第一氧化物半導體膜之頂面上並且接觸該第一氧化物半導體膜之該頂面；第一閘極絕緣膜，其在該第二氧化物半導體膜上並且接觸該第二氧化物半導體膜；第一閘極電極，其在該第一閘極絕緣膜之上；以及該第二電晶體包含：第三氧化物半導體膜；第二閘極絕緣膜，其在該第三氧化物半導體膜上並且接觸該第三氧化物半導體膜；以及第二閘極電極，其在該第二閘極絕緣膜之上，其中該第一氧化物半導體膜、該第二氧化物半導體膜以及該第三氧化物半導體膜各包含銦、鎵與鋅，以及其中，在該第二氧化物半導體膜與該第三氧化物半導體膜之各者中，銦原子比例小於或等於鎵原子比例。 A semiconductor device includes: a first transistor and a second transistor, the first transistor and the second transistor are each on a first insulating film; the first transistor includes: a first oxide semiconductor film A second oxide semiconductor film on the top surface of the first oxide semiconductor film and in contact with the top surface of the first oxide semiconductor film; a first gate insulating film on the second oxide semiconductor On the film and in contact with the second oxide semiconductor film; a first gate electrode above the first gate insulating film; and the second transistor includes: a third oxide semiconductor film; a second gate insulating A film on the third oxide semiconductor film and in contact with the third oxide semiconductor film; and a second gate electrode on the second gate insulating film, wherein the first oxide semiconductor film, The second oxide semiconductor film and the third oxide semiconductor film each include indium, gallium, and zinc, and wherein, in each of the second oxide semiconductor film and the third oxide semiconductor film, the atomic ratio of indium Less than or equal to the atomic ratio of gallium. 如申請專利範圍第1項所述之半導體裝置，其中該第一電晶體包含源極電極與汲極電極，該源極電極與該汲極電極各在該第二氧化物半導體膜上並且接觸該第二氧化 物半導體膜。 The semiconductor device as described in item 1 of the patent application range, wherein the first transistor includes a source electrode and a drain electrode, the source electrode and the drain electrode are each on the second oxide semiconductor film and contact the The second oxide semiconductor film. 如申請專利範圍第1項所述之半導體裝置，其包含第二絕緣膜，該第二絕緣膜在該第一閘極電極與該第二閘極電極之上，其中該第一電晶體包含第一源極電極與第一汲極電極，該第一源極電極與該第一汲極電極各在該第二絕緣膜之上，以及其中該第二電晶體包含第二源極電極與第二汲極電極，該第二源極電極與該第二汲極電極各在該第二絕緣膜之上。 The semiconductor device according to item 1 of the patent application scope, which includes a second insulating film over the first gate electrode and the second gate electrode, wherein the first transistor includes a A source electrode and a first drain electrode, the first source electrode and the first drain electrode are each above the second insulating film, and wherein the second transistor includes a second source electrode and a second A drain electrode, the second source electrode and the second drain electrode are each on the second insulating film. 如申請專利範圍第1項所述之半導體裝置，其包含第二絕緣膜，該第二絕緣膜在該第一閘極電極與該第二閘極電極之上並且接觸該第二氧化物半導體膜與該第三氧化物半導體膜，其中該第二絕緣膜為氮化物絕緣膜。 The semiconductor device according to item 1 of the patent application scope, which includes a second insulating film over the first gate electrode and the second gate electrode and in contact with the second oxide semiconductor film With the third oxide semiconductor film, the second insulating film is a nitride insulating film. 如申請專利範圍第1項所述之半導體裝置，其中該第二氧化物半導體膜覆蓋該第一氧化物半導體膜。 The semiconductor device as described in item 1 of the patent application range, wherein the second oxide semiconductor film covers the first oxide semiconductor film. 如申請專利範圍第1項所述之半導體裝置，其中，在該第一氧化物半導體膜中，銦原子比例大於鎵原子比例。 The semiconductor device as described in item 1 of the patent application range, wherein in the first oxide semiconductor film, the indium atomic ratio is larger than the gallium atomic ratio. 如申請專利範圍第1項所述之半導體裝置，其中該第一閘極電極電性連接至該第二電晶體的源極電極與汲極電極中的一者。 The semiconductor device as described in item 1 of the patent application range, wherein the first gate electrode is electrically connected to one of the source electrode and the drain electrode of the second transistor. 一種顯示裝置，其包含如申請專利範圍第1項所述之半導體裝置，其中該顯示裝置包含： 驅動器電路部分，其包含該第一電晶體；以及像素部分，其包含：該第二電晶體；以及顯示元件，其電性連接至該第二電晶體。 A display device comprising the semiconductor device as described in item 1 of the patent application scope, wherein the display device comprises: a driver circuit portion including the first transistor; and a pixel portion including: the second transistor; And a display element, which is electrically connected to the second transistor. 如申請專利範圍第8項所述之顯示裝置，其中該顯示元件為液晶元件。 The display device as described in item 8 of the patent application range, wherein the display element is a liquid crystal element. 如申請專利範圍第8項所述之顯示裝置，其中該顯示元件為電致發光元件。 The display device as described in item 8 of the patent application range, wherein the display element is an electroluminescence element. 一種半導體裝置，其包含：第一電晶體與第二電晶體，該第一電晶體與該第二電晶體各在第一絕緣膜之上；該第一電晶體包含：第一閘極電極，其在該第一絕緣膜之上；第一閘極絕緣膜，其在該第一閘極電極之上；第一氧化物半導體膜，其在該第一閘極絕緣膜之上；第二氧化物半導體膜，其在該第一氧化物半導體膜之頂面上並且接觸該第一氧化物半導體膜之該頂面；第二閘極絕緣膜，其在該第二氧化物半導體膜上並且接觸該第二氧化物半導體膜；以及第二閘極電極，其在該第二閘極絕緣膜之上；以及該第二電晶體包含：第三氧化物半導體膜，其在該第一閘極絕緣膜之 上；第三閘極絕緣膜，其在該第三氧化物半導體膜上並且接觸該第三氧化物半導體膜；以及第三閘極電極，其在該第三閘極絕緣膜之上，其中該第一氧化物半導體膜、該第二氧化物半導體膜以及該第三氧化物半導體膜各包含銦、鎵與鋅，以及其中，在該第二氧化物半導體膜與該第三氧化物半導體膜之各者中，銦原子比例小於或等於鎵原子比例。 A semiconductor device includes: a first transistor and a second transistor, the first transistor and the second transistor are each on a first insulating film; the first transistor includes: a first gate electrode, It is above the first insulating film; the first gate insulating film, which is above the first gate electrode; the first oxide semiconductor film, which is above the first gate insulating film; the second oxide Semiconductor film, which is on the top surface of the first oxide semiconductor film and contacts the top surface of the first oxide semiconductor film; a second gate insulating film, which is on the second oxide semiconductor film and contacts The second oxide semiconductor film; and the second gate electrode above the second gate insulating film; and the second transistor includes: a third oxide semiconductor film which is insulated at the first gate Over the film; a third gate insulating film on the third oxide semiconductor film and in contact with the third oxide semiconductor film; and a third gate electrode on the third gate insulating film, Wherein the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film each include indium, gallium, and zinc, and wherein, in the second oxide semiconductor film and the third oxide semiconductor In each of the films, the atomic ratio of indium is less than or equal to the atomic ratio of gallium. 如申請專利範圍第11項所述之半導體裝置，其中該第一電晶體包含源極電極與汲極電極，該源極電極與該汲極電極各在該第二氧化物半導體膜上並且接觸該第二氧化物半導體膜。 The semiconductor device as described in item 11 of the patent application range, wherein the first transistor includes a source electrode and a drain electrode, the source electrode and the drain electrode are each on the second oxide semiconductor film and contact the The second oxide semiconductor film. 如申請專利範圍第11項所述之半導體裝置，其包含第二絕緣膜，該第二絕緣膜在該第二閘極電極與該第三閘極電極之上，其中該第一電晶體包含第一源極電極與第一汲極電極，該第一源極電極與該第一汲極電極各在該第二絕緣膜之上，以及其中該第二電晶體包含第二源極電極與第二汲極電極，該第二源極電極與該第二汲極電極各在該第二絕緣膜之上。 The semiconductor device as described in item 11 of the patent application scope, which includes a second insulating film over the second gate electrode and the third gate electrode, wherein the first transistor includes a A source electrode and a first drain electrode, the first source electrode and the first drain electrode are each above the second insulating film, and wherein the second transistor includes a second source electrode and a second A drain electrode, the second source electrode and the second drain electrode are each on the second insulating film. 如申請專利範圍第11項所述之半導體裝置，其包含第二絕緣膜，該第二絕緣膜在該第二閘極電極與該第三閘極電極之上並且接觸該第二氧化物半導體膜與該第三氧 化物半導體膜，其中該第二絕緣膜為氮化物絕緣膜。 The semiconductor device according to item 11 of the patent application scope, which includes a second insulating film over the second gate electrode and the third gate electrode and in contact with the second oxide semiconductor film With the third oxide semiconductor film, the second insulating film is a nitride insulating film. 如申請專利範圍第11項所述之半導體裝置，其中該第一閘極絕緣膜為氮化物絕緣膜。 The semiconductor device as described in item 11 of the patent application range, wherein the first gate insulating film is a nitride insulating film. 如申請專利範圍第11項所述之半導體裝置，其中該第二氧化物半導體膜覆蓋該第一氧化物半導體膜。 The semiconductor device as described in item 11 of the patent application range, wherein the second oxide semiconductor film covers the first oxide semiconductor film. 如申請專利範圍第11項所述之半導體裝置，其中，在該第一氧化物半導體膜中，銦原子比例大於鎵原子比例。 The semiconductor device as described in item 11 of the patent application range, wherein in the first oxide semiconductor film, the proportion of indium atoms is larger than the proportion of gallium atoms. 如申請專利範圍第11項所述之半導體裝置，其中該第一閘極電極電性連接至該第二電晶體的源極電極與汲極電極中的一者。 The semiconductor device as described in item 11 of the patent application range, wherein the first gate electrode is electrically connected to one of the source electrode and the drain electrode of the second transistor. 一種顯示裝置，其包含如申請專利範圍第11項所述之半導體裝置，其中該顯示裝置包含：驅動器電路部分，其包含該第一電晶體；以及像素部分，其包含：該第二電晶體；以及顯示元件，其電性連接至該第二電晶體。 A display device comprising the semiconductor device as described in item 11 of the patent application range, wherein the display device comprises: a driver circuit portion including the first transistor; and a pixel portion including: the second transistor; And a display element, which is electrically connected to the second transistor. 如申請專利範圍第19項所述之顯示裝置，其中該顯示元件為液晶元件。 The display device as described in item 19 of the patent application range, wherein the display element is a liquid crystal element. 如申請專利範圍第19項所述之顯示裝置，其中該顯示元件為電致發光元件。 The display device as described in item 19 of the patent application range, wherein the display element is an electroluminescence element. 一種半導體裝置，其包含：第一電晶體與第二電晶體，該第一電晶體與該第二電晶體各在第一絕緣膜之上； 該第一電晶體包含：第一氧化物半導體膜；第二氧化物半導體膜，其在該第一氧化物半導體膜之頂面上並且接觸該第一氧化物半導體膜之該頂面；第一閘極絕緣膜，其在該第二氧化物半導體膜上並且接觸該第二氧化物半導體膜；第一閘極電極，其在該第一閘極絕緣膜之上；以及該第二電晶體包含：第三氧化物半導體膜；第二閘極絕緣膜，其在該第三氧化物半導體膜上並且接觸該第三氧化物半導體膜；以及第二閘極電極，其在該第二閘極絕緣膜之上，其中該第一氧化物半導體膜、該第二氧化物半導體膜以及該第三氧化物半導體膜各包含銦、鎵與鋅，以及其中該第一氧化物半導體膜、該第二氧化物半導體膜以及該第三氧化物半導體膜各包含非單晶氧化物半導體，該非單晶氧化物半導體為c軸配向結晶氧化物半導體或奈米結晶氧化物半導體，其中，在該第二氧化物半導體膜與該第三氧化物半導體膜之各者中，銦原子比例小於或等於鎵原子比例。 A semiconductor device includes: a first transistor and a second transistor, the first transistor and the second transistor are each on a first insulating film; the first transistor includes: a first oxide semiconductor film A second oxide semiconductor film on the top surface of the first oxide semiconductor film and in contact with the top surface of the first oxide semiconductor film; a first gate insulating film on the second oxide semiconductor On the film and in contact with the second oxide semiconductor film; a first gate electrode above the first gate insulating film; and the second transistor includes: a third oxide semiconductor film; a second gate insulating A film on the third oxide semiconductor film and in contact with the third oxide semiconductor film; and a second gate electrode on the second gate insulating film, wherein the first oxide semiconductor film, The second oxide semiconductor film and the third oxide semiconductor film each include indium, gallium, and zinc, and wherein the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film each include A non-single-crystal oxide semiconductor, the non-single-crystal oxide semiconductor being a c-axis aligned crystalline oxide semiconductor or a nanocrystalline oxide semiconductor, wherein each of the second oxide semiconductor film and the third oxide semiconductor film In the atomic ratio of indium is less than or equal to the atomic ratio of gallium. 如申請專利範圍第22項所述之半導體裝置，其中，在該第一氧化物半導體膜中，銦原子比例大於鎵原子比例。 The semiconductor device as described in item 22 of the patent application range, wherein in the first oxide semiconductor film, the proportion of indium atoms is larger than the proportion of gallium atoms. 如申請專利範圍第22項所述之半導體裝置，其中該第一閘極電極電性連接至該第二電晶體的源極電極與汲極電極中的一者。 The semiconductor device of claim 22, wherein the first gate electrode is electrically connected to one of the source electrode and the drain electrode of the second transistor. 一種顯示裝置，其包含如申請專利範圍第22項所述之半導體裝置，其中該顯示裝置包含：驅動器電路部分，其包含該第一電晶體；以及像素部分，其包含：該第二電晶體；以及顯示元件，其電性連接至該第二電晶體。 A display device comprising the semiconductor device as described in item 22 of the patent application range, wherein the display device comprises: a driver circuit portion including the first transistor; and a pixel portion including: the second transistor; And a display element, which is electrically connected to the second transistor. 如申請專利範圍第25項所述之顯示裝置，其中該顯示元件為液晶元件。 The display device as described in item 25 of the patent application range, wherein the display element is a liquid crystal element. 如申請專利範圍第25項所述之顯示裝置，其中該顯示元件為電致發光元件。 The display device as described in item 25 of the patent application range, wherein the display element is an electroluminescence element. 一種半導體裝置，其包含：第一電晶體與第二電晶體，該第一電晶體與該第二電晶體各在第一絕緣膜之上；該第一電晶體包含：第一氧化物半導體膜；第二氧化物半導體膜，其在該第一氧化物半導體膜上並且接觸該第一氧化物半導體膜；第三氧化物半導體膜，其在該第二氧化物半導體膜之頂面以及該第一氧化物半導體膜與該第二氧化物半導體膜之側面上並且接觸該第二氧化物半導體膜之該頂面以 及該第一氧化物半導體膜與該第二氧化物半導體膜之該側面；第一閘極絕緣膜，其在該第三氧化物半導體膜上並且接觸該第三氧化物半導體膜；以及第一閘極電極，其在該第一閘極絕緣膜之上；以及該第二電晶體包含：第四氧化物半導體膜；第二閘極絕緣膜，其在該第四氧化物半導體膜上並且接觸該第四氧化物半導體膜；以及第二閘極電極，其在該第二閘極絕緣膜之上，其中該第一氧化物半導體膜、該第二氧化物半導體膜、該第三氧化物半導體膜以及該第四氧化物半導體膜各包含銦、鎵與鋅，以及其中，在該第三氧化物半導體膜與該第四氧化物半導體膜之各者中，銦原子比例小於或等於鎵原子比例。 A semiconductor device includes: a first transistor and a second transistor, the first transistor and the second transistor are each on a first insulating film; the first transistor includes: a first oxide semiconductor film A second oxide semiconductor film on the first oxide semiconductor film and in contact with the first oxide semiconductor film; a third oxide semiconductor film on the top surface of the second oxide semiconductor film and the first An oxide semiconductor film and the side surfaces of the second oxide semiconductor film and in contact with the top surface of the second oxide semiconductor film and the side surfaces of the first oxide semiconductor film and the second oxide semiconductor film; A gate insulating film on the third oxide semiconductor film and in contact with the third oxide semiconductor film; and a first gate electrode on the first gate insulating film; and the second electrode The crystal includes: a fourth oxide semiconductor film; a second gate insulating film on and in contact with the fourth oxide semiconductor film; and a second gate electrode on the second gate An electrode insulating film, wherein the first oxide semiconductor film, the second oxide semiconductor film, the third oxide semiconductor film, and the fourth oxide semiconductor film each include indium, gallium, and zinc, and wherein, In each of the third oxide semiconductor film and the fourth oxide semiconductor film, the atomic ratio of indium is less than or equal to the atomic ratio of gallium. 如申請專利範圍第28項所述之半導體裝置，其中該第一電晶體包含源極電極與汲極電極，該源極電極與該汲極電極各在該第三氧化物半導體膜上並且接觸該第三氧化物半導體膜。 The semiconductor device of claim 28, wherein the first transistor includes a source electrode and a drain electrode, the source electrode and the drain electrode are each on the third oxide semiconductor film and contact the The third oxide semiconductor film. 如申請專利範圍第28項所述之半導體裝置，其包含第二絕緣膜，其在該第一閘極電極與該第二閘極電極之上，其中該第一電晶體包含第一源極電極與第一汲極電 極，該第一源極電極與該第一汲極電極各在該第二絕緣膜之上，以及其中該第二電晶體包含第二源極電極與第二汲極電極，該第二源極電極與該第二汲極電極各在該第二絕緣膜之上。 The semiconductor device of claim 28, which includes a second insulating film over the first gate electrode and the second gate electrode, wherein the first transistor includes a first source electrode And a first drain electrode, the first source electrode and the first drain electrode are each on the second insulating film, and wherein the second transistor includes a second source electrode and a second drain electrode, The second source electrode and the second drain electrode are each on the second insulating film. 如申請專利範圍第28項所述之半導體裝置，其包含第二絕緣膜，該第二絕緣膜在該第一閘極電極與該第二閘極電極之上並且接觸該第三氧化物半導體膜與該第四氧化物半導體膜，其中該第二絕緣膜為氮化物絕緣膜。 The semiconductor device according to item 28 of the patent application scope, which includes a second insulating film over the first gate electrode and the second gate electrode and in contact with the third oxide semiconductor film With the fourth oxide semiconductor film, the second insulating film is a nitride insulating film. 如申請專利範圍第28項所述之半導體裝置，其中該第三氧化物半導體膜覆蓋該第一氧化物半導體膜與該第二氧化物半導體膜。 The semiconductor device according to item 28 of the patent application range, wherein the third oxide semiconductor film covers the first oxide semiconductor film and the second oxide semiconductor film. 如申請專利範圍第28項所述之半導體裝置，其中，在該第二氧化物半導體膜中，銦原子比例大於鎵原子比例。 The semiconductor device according to item 28 of the patent application range, wherein in the second oxide semiconductor film, the proportion of indium atoms is larger than the proportion of gallium atoms. 如申請專利範圍第28項所述之半導體裝置，其中該第一閘極電極電性連接至該第二電晶體的源極電極與汲極電極中的一者。 The semiconductor device of claim 28, wherein the first gate electrode is electrically connected to one of the source electrode and the drain electrode of the second transistor. 一種顯示裝置，其包含如申請專利範圍第28項所述之半導體裝置，其中該顯示裝置包含：驅動器電路部分，其包含該第一電晶體；以及像素部分，其包含：該第二電晶體；以及顯示元件，其電性連接至該第二電晶體。 A display device including the semiconductor device as described in item 28 of the patent application range, wherein the display device includes: a driver circuit portion including the first transistor; and a pixel portion including: the second transistor; And a display element, which is electrically connected to the second transistor. 如申請專利範圍第35項所述之顯示裝置，其中該顯示元件為液晶元件。 The display device as described in item 35 of the patent application range, wherein the display element is a liquid crystal element. 如申請專利範圍第35項所述之顯示裝置，其中該顯示元件為電致發光元件。 The display device as described in item 35 of the patent application range, wherein the display element is an electroluminescence element.
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