TWI683881B - Method for manufacturing dicing sheet and semiconductor wafer - Google Patents

Abstract

The invention relates to a method for manufacturing a dicing sheet and a semiconductor wafer. Among them, the dicing sheet of the present invention is a dicing sheet 10 having an intermediate layer 2 formed on a substrate 3 and a single surface thereof, and an adhesive layer 1 formed on the intermediate layer 2, the adhesive layer 1 contains intramolecular For compounds with energy ray-hardenable double bonds, the storage modulus G'of the adhesive layer 1 at 23°C before hardening is greater than the storage modulus G'of the intermediate layer 2 at 23°C, and the adhesive layer 1 hardens Before the dicing sheet 10, when the adhesion test of the silicon wafer was performed by 180° tearing based on JISZ0237:2000, the measured adhesion force was 2000mN/25mm or more, and the adhesive layer 1 was at 23°C before hardening. The loss factor tanδ is above 0.23. With such a dicing sheet 10, the laminate obtained by adhering the dicing sheet 10 to the semiconductor wafer 30 is difficult to partially peel off even if it is left standing for a set time.

Description

Method for manufacturing dicing sheet and semiconductor wafer

The present invention relates to a dicing sheet, in particular, a semiconductor wafer is cut into a plurality of circuits per circuit, and is used to fix a semiconductor wafer when a semiconductor wafer is made; in addition, the present invention relates to a dicing sheet using the dicing sheet Manufacturing method of semiconductor wafers. In particular, the dicing sheet of the present invention is suitable for fixing and cutting a semiconductor wafer having a protruding electrode on its surface, for example, a semiconductor wafer having a through-silicon via (TSV) electrode.

After the circuit is formed on the surface of the semiconductor wafer, a back grinding process for the wafer, a back grinding process for adjusting the thickness of the wafer, and a cutting process for cutting the wafer into a plurality of set wafer sizes are performed. In addition, when performing the back-grinding process, it is sometimes necessary to perform processing such as etching on the back with heat generation, and processing such as depositing a metal film on the back that needs to be performed at a high temperature. The semiconductor wafers (semiconductor wafers) cut into a plurality of wafer sizes are picked up and transferred to the next process.

Recently, with the popularization of IC cards, the semiconductor wafers of its constituent parts have become thinner and thinner. Therefore, the original wafers with a thickness of about 350 μm are required to be thinned to 50 to 100 μm or less.

In addition, in order to cope with the increased capacity and higher functionality of electronic circuits, the development of laminated circuits in which semiconductor wafers are built up in layers is under development. Although this product In the layer circuit, the conductive connection of the original semiconductor chip is generally implemented through wire bonding. Recently, due to miniaturization. The necessity of high functionality does not require wire bonding, but an efficient method is developed. For example, on the surface of the semiconductor wafer where the circuit is formed, an electrode (through electrode) penetrating to the back is provided to directly connect the conductive connection between the upper and lower wafers Methods.

For the manufacturing method of such a perforated electrode wafer, for example, a through hole can be prepared by plasma (Plasma) at a position where the semiconductor wafer is provided, and the through hole is etched after injecting a copper conductor. Circuits and through-hole electrodes are formed on the surface of the semiconductor wafer. The semiconductor wafer forming the circuit and the perforated electrode is cut with a dicing sheet that forms an adhesive layer on the substrate film, thereby obtaining individual perforated electrode wafers.

As described above, the patent literature discloses that in the dicing process for obtaining a perforated electrode wafer, the adhesive layer formed on the base film is pressed against the protruding perforated electrode to deform it to protrude from the electrode The concave part of the adhesive layer of similar shape is processed into the electrode, and the semiconductor wafer forming the through-hole electrode is pasted. A method of fixing to a dicing sheet and then performing dicing to obtain individual perforated electrode wafers (Patent Documents 1 and 2). However, in the dicing sheet described in Patent Documents 1 and 2, if a piercing electrode is placed in the adhesive layer, adhesive residue may be generated in the narrow range between the perforating electrodes, and the residue may contaminate the wafer surface , Leading to poor reliability of semiconductor chips. Although the methods of Patent Documents 1 and 2 propose a method for reducing such residues, the possibility of residue residues cannot be completely eliminated. In addition, the cutting pieces described in Patent Documents 1 and 2 are designed to insert perforations. The electrode must be lowered in elasticity during dicing. Therefore, the chip is easily chipped due to vibration during dicing.

In order to solve the above-mentioned problems, Patent Document 3 describes a dicing sheet that can perform dicing and top picking without residue of the adhesive layer between the protruding electrodes (perforated electrodes) and without damage to the wafer. It consists of an intermediate layer formed on the substrate and its single surface, and an adhesive layer with a thickness of 8-30 μm formed on the intermediate layer. The adhesive layer contains a compound containing an energy ray hardening double bond in the molecule. The storage modulus G′ at 23° C. before the curing of the adhesive layer exceeds the storage modulus G′ of the intermediate layer at 23° C. by 4 times. On a wafer in which cylindrical electrodes with a height of 15 μm and a diameter of 15 μm in 3 rows and 3 columns are formed at an equal pitch of 40 μm pitch, when they are pasted through an adhesive layer, a cylinder formed in 3 rows and 3 columns In the center electrode of the shape electrode, the part with a height of 7.5 μm or less does not contact the adhesive layer.

In addition, in connection with the invention described in Patent Document 3, a dicing sheet containing an intermediate layer formed of a cured urethane-containing product is also described in Patent Document 4.

[Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2006-202926

[Patent Document 2] Japanese Patent Laid-Open No. 2010-135494

[Patent Document 3] Japanese Patent Laid-Open No. 2013-098408

[Patent Document 4] Japanese Patent Laid-Open No. 2013-197390

As shown in Patent Documents 3 and 4 shown in FIG. 2, when adhering to the semiconductor wafer 30, the adhesive layer 21 does not track between the protruding electrodes 31, but at the periphery of the area where the protruding electrodes 31 are formed (electrode formation area) The dicing sheet 20 traced on 30A. Through this dicing sheet 20, the residue of the adhesive layer 21 does not remain between the protruding electrodes 31, and can be prevented from remaining on the peripheral edge 30A of the electrode formation region due to incomplete polymerization Residue. In addition, the adhesive layer 21 is adhered to the semiconductor wafer 30 on the peripheral edge 30A of the electrode formation area. Since the adhesive layer does not become excessively soft, it can prevent the intrusion of water during dicing, and the dicing is excellent , Can also prevent the occurrence of chip cracking. In addition, by hardening the adhesive layer 21 with energy rays, its adhesive force can be controlled, in addition to easily picking up the chip, and also preventing damage to the chip.

Similarly, although the dicing sheet 20 described in Patent Documents 3 and 4 has excellent characteristics, recently the laminate obtained by pasting the dicing sheet 20 to the semiconductor wafer 30 is pasted until the start of the dicing process. When the period was still, tracking the periphery 30A of the electrode formation area revealed that the adhesive layer 21 that was originally intact on the semiconductor wafer 30 may partially peel off on the semiconductor wafer 30 ( In the patent specification of the present invention, this phenomenon is also called "partial peeling"). Specifically, the portion shown as the peripheral edge 30A' of the electrode formation region in FIG. 3 is a portion where the adhesive layer 21 is partially peeled off from the semiconductor wafer 30, that is, a portion where partial peeling occurs, based on this partial peeling When the degree of peeling of the adhesive layer 21 is large, that is, when the area where partial peeling occurs is wide, the cutting process is performed by the above-mentioned laminate, which affects the stability of the cutting operation.

The present invention has been completed in view of the above problems, and the object is to provide a substrate obtained by attaching a dicing sheet to a semiconductor wafer within a set period In particular, the dicing sheet that is partially peeled off as described above and the method of manufacturing a semiconductor wafer using this dicing sheet are not likely to occur easily after standing for about 24 hours.

In order to achieve the above object, the content provided by the present invention is as follows.

(1) The dicing sheet according to the present invention is a dicing sheet provided with an intermediate layer formed on a substrate and one side thereof, and an adhesive layer formed on the intermediate layer, characterized in that the adhesive layer contains molecules A compound containing an energy ray-curable double bond, the storage modulus G'of the adhesive layer at 23°C before curing is larger than the storage modulus G'of the intermediate layer at 23°C, Before the adhesive layer is cured, the dicing sheet is tested according to JIS Z0237:2000. When the 180-degree peeling adhesion test is performed on the silicon mirror wafer, the measured adhesive force is 2000mN/25mm or more. The loss factor tanδ at 23°C is above 0.23.

(2) The dicing sheet described in (1) above, wherein the compound having an energy ray-curable double bond in the molecule contains energy formed by binding an energy ray polymerizable group to the main chain or side chain of the polymer Linear hardening adhesive polymer.

(3) In the dicing sheet described in (1) or (2) above, the storage modulus G′ of the intermediate layer at 23° C. is 1×10 ⁴ Pa or more and less than 1×10 ⁵ Pa.

(4) The dicing sheet according to any one of (1) to (3) above, characterized in that the storage modulus G′ at 23° C. before curing of the adhesive layer is 3×10 ⁵ Pa or more.

(5) The dicing sheet according to any one of (1) to (4) above, characterized in that the adhesive layer has a reactive functional group-containing acrylic polymer and a crosslinking agent. For the acrylic polymer 100 The mass part contains 5 mass parts or more of the crosslinking agent.

(6) The dicing sheet described in (5) above, characterized in that: The linking agent is an isocyanate crosslinking agent.

(7) The dicing sheet according to any one of (1) to (6) above, characterized in that it is used for adhering to a wafer provided with protruding electrodes.

(8) The dicing sheet described in (7) above, wherein the protruding electrode is a perforated electrode.

(9) The dicing sheet described in (7) or (8) above, wherein the thickness of the intermediate layer is 0.5 times or more and 1.5 times or less the height of the protruding electrode.

(10) The dicing sheet according to any one of (1) to (9) above, wherein the storage modulus G′ of the adhesive layer at 23° C. before curing is higher than that of the intermediate layer at 23° C. The modulus G'is 4 times larger.

(11) The dicing sheet according to any one of (1) to (10) above, wherein the thickness of the adhesive layer is 5 μm or more and 50 μm or less.

(12) The dicing sheet according to any one of (1) to (11) above, wherein the thickness of the intermediate layer is 5 μm or more and 50 μm or less.

(13) The method of manufacturing a semiconductor wafer according to the present invention includes a process of attaching the dicing sheet described in any one of (1) to (12) above on an electrode forming surface of a semiconductor wafer having a protruding electrode 1. A manufacturing process of cutting a plurality of semiconductor wafers into which the semiconductor wafer is cut for each circuit, and a process of taking the semiconductor wafers up.

The present invention provides a dicing sheet and a method for manufacturing a semiconductor wafer using the dicing sheet, wherein the laminated body obtained after the dicing sheet is adhered to a semiconductor wafer is not likely to occur even if it is allowed to stand for a set period of time, as described above Partly stripped.

10、20‧‧‧Cutting sheet

1, 21‧‧‧ adhesive layer

2‧‧‧ middle layer

3‧‧‧ Base material

30‧‧‧Semiconductor wafer

30A‧‧‧Electrode formation area perimeter

30A’‧‧‧Partial peeling

31‧‧‧protruding electrode

[Fig. 1] A schematic cross-sectional view of a cutting piece according to one embodiment of the present invention.

[FIG. 2] A cross-sectional view in a conceptual form showing the state where the dicing pieces described in Patent 3 and 4 are adhered to a semiconductor wafer.

[Fig. 3] A cross-sectional view showing a partially peeled cutting sheet in a conceptual form.

The embodiments of the present invention will be described below.

1 is a schematic cross-sectional view of an adhesive sheet according to one embodiment of the present invention. A cutting sheet 10 according to one embodiment of the present invention has a substrate 3 and an intermediate layer 2 formed on one side thereof, and The adhesive layer 1 formed on the intermediate layer 2.

(Adhesive layer 1)

Before the adhesive layer 1 is hardened (before irradiation with energy rays), the storage modulus G'at 23°C is larger than the storage modulus G'of the intermediate layer 2 at 23°C, which is the same because of the low elasticity The high elasticity adhesive layer 1 in the form of a modular intermediate layer 2 can appropriately suppress the tracking of the adhesive layer 1 between the protruding electrodes, and at the same time prevent the generation of adhesive between the protruding electrodes The residue of layer 1 and the damage of the wafer during top picking. In addition, in the laminate of the adhesive layer 1 and the intermediate layer 2, since the adhesive layer 1 enhances the low elasticity of the intermediate layer 2, compared with the case where there is only one low elastic modulus layer, it can suppress the crystallization during cutting. Round vibrations are less prone to chip cracking. From the viewpoint that the above effects can be obtained more stably, the adhesive layer 1 is hard Prior to chemical conversion, the storage modulus G'at 23°C is preferably four times greater than the storage modulus G'of the intermediate layer 2 at 23°C, preferably the storage modulus G'at 23°C of the intermediate layer 2 It is 5 times larger, more preferably, it is 10 times larger than the storage modulus G′ of the intermediate layer 2 at 23° C., and it is 20 times larger than the storage modulus G′ of the intermediate layer 2 at 23° C.

Before the adhesive layer 1 is hardened, the storage modulus G′ at 23° C. is specifically preferably 3×10 ⁵ Pa or more, more preferably 3.5×10 ⁵ Pa or more, and 1×10 ⁷ Pa or less. Before the adhesive layer 1 is hardened, if the storage modulus G′ at 23° C. is within the above range, the tracking effect between the protruding electrodes suppressing the adhesive can be made more reliable.

For the dicing sheet in the state before the irradiation of the energy ray, the adhesion force measured when the 180° peeling adhesion test is performed on the silicon wafer based on JIS Z0237:2000 (also referred to as "adhesion force before irradiation" in the patent specification of the present invention) ") is above 2000mN/25mm. In the patent specification of the present invention, the conditions until the adhesive force is measured before irradiation are as follows: the surface of the adhesive layer 1 of the dicing sheet is adhered to the silicon mirror wafer with a load of 2 kgf using a rubber roller (Rubber roller), and the dicing sheet is adhered to the silicon In the state on the mirror wafer, it was maintained in an environment of 23°C and 50% relative humidity for 20 minutes. After 20 minutes, a 180° peel adhesion test was performed based on JIS Z0237:2000.

The adhesion force before irradiation is 2000mN/25mm or more, which makes partial peeling difficult to occur. From the viewpoint of stably reducing the possibility of partial peeling, the adhesion force before irradiation is preferably 2200mN/25mm or more, preferably 2300mN/25mm Above, more preferably 2500mN/25mm or more. From the viewpoint of reducing the possibility of partial peeling, the upper limit of the adhesive force before irradiation is not set. From the viewpoint of improving handling and manufacturing stability, the adhesion force before irradiation It is preferably 10000mN/25mm or less, preferably 8000mN/25mm or less.

Before the adhesive layer 1 is hardened, the loss factor tan δ at 23°C is 0.23 or more. Since this loss factor tan δ is 0.23 or more, the deformation of the adhesive layer 1 becomes easy. Therefore, it is easier to suppress the deformation of the sequential adhesive 1 and partial peeling becomes difficult. From the viewpoint of more stably reducing the possibility of occurrence of partial peeling, the loss factor tan δ is preferably 0.25 or more, preferably 0.3 or more, and more preferably 0.38 or more. From the viewpoint of suppressing the occurrence of partial peeling, the upper limit of the above-mentioned loss factor tanδ is not set, and from the viewpoint of handleability and productivity, the above-mentioned loss factor tanδ is preferably 0.7 or less, more preferably 0.65 or less.

The thickness of the adhesive layer 1 is preferably 5 μm or more and 50 μm or less. If the thickness of the adhesive layer 1 is within the above range, the cuttability is improved and the occurrence of chip cracking is suppressed. In addition, the tracking of the adhesive layer 1 between the protruding electrodes can be appropriately suppressed to prevent the protruding electrodes from The residue of the adhesive layer 1 in between occurs, or the wafer is damaged during top picking. In addition, the traceability of the dicing sheet around the periphery of the region where the protruding electrode is formed (electrode formation region), which will be described later, can also be maintained. The thickness of the adhesive layer 1 is preferably 5 μm or more and 40 μm or less, and more preferably 5 μm or more and 30 μm or less.

The adhesive layer 1 contains a compound having an energy ray hardening double bond in the molecule, and a component formed of a substance for exerting adhesiveness (hereinafter also referred to as "energy ray hardening type adhesive component").

The adhesive layer 1 is formed using an energy ray hardening adhesive component and an adhesive composition containing a photopolymerization initiator as required. In addition, in order to improve various properties, the above-mentioned adhesive composition may optionally contain other components than the above, and as for other components, a crosslinking agent is preferable.

The following describes the energy ray-curable adhesive component with acrylic adhesive as an example.

The acrylic adhesive contains an acrylic polymer (A), an energy ray-curable compound (B), and an energy ray-curable compound in order to provide the adhesive composition with sufficient adhesiveness and film-forming properties (sheet-formability). B) Contains polymerizable groups of energy rays, which will polymerize and harden if exposed to ultraviolet rays, electron beams, and other energy rays, and have the function of reducing the adhesion of the adhesive composition. In addition, an energy ray-curable adhesive polymer (hereinafter also referred to as a component) formed by combining the properties of the above-mentioned components (A) and (B) with an energy ray polymerizable group bonded to the main chain or side chain is formed "(AB)") is better. This energy ray hardening adhesive polymer (AB) has both adhesiveness and energy ray hardening properties.

As for the acrylic polymer (A), an acrylic polymer known per se can be used. The polystyrene-equivalent weight average molecular weight (Mw) of the acrylic polymer (A) is preferably 10,000 to 2 million, and more preferably 100,000 to 1.5 million. In addition, the glass transition temperature (Tg) of the acrylic polymer (A) is preferably in the range of -70 to 30°C, and more preferably in the range of -60 to 20°C.

The monomer constituting the acrylic polymer (A) can be exemplified by (meth)acrylate monomers or derivatives thereof. Specific examples include methyl (meth)acrylate, ethyl (meth)acrylate, ( Propyl meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate and other alkyl (meth)acrylates with an alkyl carbon number of 1 to 18; tricycloalkane (Meth)acrylic acid, acetophenone (meth)acrylic acid ester, isobornyl (meth)acrylic acid ester, dicyclopentyl (meth)acrylic acid ester, dicyclopentenyl (meth)acrylic acid , Dicyclopentenyloxy (meth) acrylic acid, amide imine (meth) acrylate and other (meth) acrylate with a cyclic structure; hydroxymethyl (meth) acrylate Hydroxy-containing (meth)acrylates such as esters, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate; acrylic acid, methacrylic acid, methylene succinic acid, glycidyl acrylic acid Ester, glycidyl methacrylate, etc. In addition, vinyl acetate, acrylonitrile, styrene, etc. can also be copolymerized. The above components may be used alone or in combination of two or more. In addition, "(meth)acrylic acid" in the patent specification of the present invention means all of acrylic acid and methacrylic acid, and the same applies to other similar terms.

In addition, it is preferable that the acrylic polymer (A) of the present invention has a reactive functional group. In the adhesive composition constituting the adhesive layer 1 of the present invention, the cross-linking agent reactive functional group added After the reaction, a three-dimensional network structure is formed, so that the adhesive layer 1 is easier to adjust the storage modulus G'to the set range under a 23°C environment. The reactive functional group of the acrylic polymer (A) may include a carboxyl group, an amine group, an epoxy group, a hydroxyl group, etc., but from the viewpoint of easier reaction with a crosslinking agent, the hydroxyl group is preferably selected. Reactive functional group The acrylic polymer (A) is constituted by the above-mentioned monomers having reactive functional groups such as hydroxyl (meth)acrylate or acrylic acid, and can be introduced into the acrylic polymer (A).

Among all the monomers constituting the acrylic polymer (A), 5-30% by mass of the monomer having a reactive functional group is preferable, and 10-30% by mass is more preferable. If the combination ratio of the monomer having a reactive functional group is within this range, the acrylic polymer (A) can be efficiently cross-linked through the cross-linking agent. When the adhesive layer 1 is at 23°C, it is easier to store Modulus G'is adjusted to the set range. In addition, the equivalent of the reactive functional group (for example: hydroxyl group) of the acrylic polymer (A) is preferably 0.17 to 2.0 times the equivalent of the reactive functional group (for example: isocyanate group) of the crosslinking agent, and the acrylic polymer (A) The relationship between the equivalent of the reactive functional group and the equivalent of the reactive functional group of the cross-linking agent is carried out in the above range. The adhesive layer 1 is more effective at 23°C. It is easy to adjust the storage modulus G'to the set range.

The energy ray-curable compound (B) is a compound that is cured by irradiation with energy rays such as ultraviolet rays and electron beams. Examples of the energy ray-curable compound include low-molecular-weight compounds (monofunctional, multifunctional) having an energy ray polymerizable group Monomers and oligomers), specific examples are trimethylolpropane triacrylate, tetraacrylic acid tetra, pentaerythritol triacrylate, dipentaerythritol monohydroxy penta, dipentaerythritol hexaacrylic acid, 1,4-butanediol diacrylate , Acrylates such as 1,6-hexanediol diacrylate; acrylates containing cyclic fatty amine structures such as dicyclopentadiene diacrylate dimethyl, isobornyl acrylate; polyethylene glycol diacrylate , Oligoester acrylate, urethane acrylate oligomer, epoxy modified acrylate, polyether acrylate, itaconic acid oligomer and other acrylate compounds. Such compounds have energy ray-hardenable double bonds in the molecule, and the molecular weight is usually 100 to 30,000, preferably about 300 to 10,000.

In general, when the component (A) (including the energy ray-curable adhesive polymer (AB) described later) is 100 parts by mass, the ratio of the low molecular weight compound having an energy ray polymerizable group is 0 to 200 parts by mass is better, more preferably 1 to 100 parts by mass, and particularly preferably 1 to 30 parts by mass. The low molecular weight compound having an energy ray polymerizable group can soften the adhesive layer 1 before the energy ray is hardened after being added due to its low molecular weight. In this way, the tracking of the adhesive layer 1 between the protruding electrodes becomes easy, which may cause the problem of adhesive residues between the protruding electrodes. Therefore, the low molecular weight compounds with energy line polymerizable groups The amount used is preferably limited to a small amount.

The energy ray-curable adhesive polymer (AB) has the properties of the above components (A) and (B), and is polymerized by binding the energy ray to the main chain or side chain of the polymer It is preferably formed as described above, although it is preferable to limit the use amount of the low molecular weight compound having an energy ray polymerizable group to a small amount, in this case, the curing of the adhesive layer 1 by irradiation of the energy ray It may become insufficient, and the effect of suppressing the residual adhesive layer 1 on the adhesive body becomes inadequate. Therefore, by using the energy ray-curable adhesive polymer (AB) in the adhesive layer 1 The adhesive layer 1 before the energy ray irradiation will not be softened, and the adhesive layer 1 can be sufficiently hardened by the energy ray irradiation. In addition, the energy ray-curable adhesive polymer (AB) has an energy ray polymerizable group in the molecule, and may also have a reactive functional group, so one of the molecules has a high probability of combining with another molecule, so After the energy ray is irradiated to harden the adhesive layer 1, there is a low possibility that low molecular components will not remain in the three-dimensional network structure. Therefore, it is possible to suppress the generation of residues caused by low-molecular components remaining without the three-dimensional network structure.

The main structure of the energy ray-curable adhesive polymer is not particularly limited, and an acrylic copolymer widely used as an adhesive is also preferable.

The energy ray polymerizable group bonded to the main chain or the side chain of the energy ray hardening adhesive polymer, for example, a group containing an energy ray hardening carbon-carbon double bond, specifically exemplified by a (meth)acryloyl group Wait. The energy ray polymerizable group can also be combined with an energy ray hardening adhesive polymer through an alkylene group, an oxyalkylene group, or a polyoxyalkylene group.

The weight average molecular weight (Mw) of the energy ray-curable adhesive polymer (AB) combined with the energy ray polymerizable group is preferably 10,000 to 2 million, and more preferably 100,000 to 1.5 million. In addition, the glass transition temperature (Tg) of the energy ray-curable adhesive polymer (AB) is preferably in the range of -70 to 30°C, more preferably in the range of -60 to 20°C.

Energy ray hardening adhesive polymer (AB), for example containing hydroxyl, Acrylic adhesive polymers of functional groups such as carboxyl group, amine group, substituted amine group, epoxy group, etc., and substituents reacting with the functional group, have 1 to 5 energy ray polymerizable carbon-carbon double bonds per molecule The polymerizable group-containing compound is obtained after the reaction. The acrylic adhesive polymer is composed of (meth)acrylate monomers with functional groups such as hydroxyl, carboxyl, amine, substituted amine, epoxy, etc., or their derivatives and constitute the aforementioned component (A) The copolymer formed by the monomer is preferred. Examples of the polymerizable group-containing compound include (meth)acryloyloxyethyl isocyanate, methyl-isopropyl-α,α-dimethylbenzyl isocyanate, (meth)acryloyl isocyanate, Allyl isocyanate, glycidyl (meth)acrylate; (meth)acrylic acid, etc.

As described above, the acrylic adhesive containing the acrylic polymer (A) and the energy ray-curable compound (B) or the energy ray-curable adhesive polymer (AB) is cured by irradiation with energy ray. In terms of energy rays, specific examples include ultraviolet rays and electron beams.

Examples of the photopolymerization initiator include photoinitiators such as benzoin compounds, methyl phenylacetone compounds, acylphosphine oxide compounds, titanocene dichloride compounds, thioxanthone compounds, and peroxy compounds, amines, and quinones. Examples of such photosensitizers include 1-hydroxycyclohexyl phenyl ketone, benzoin, benzoin dimethyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzophenone sulfide, and tetramethylamine thiamine , Azobisisobutyronitrile, bibenzyl, diacetyl, β-anthraquinone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, etc. In terms of energy rays, when ultraviolet light is used, by combining with a photoinitiator, the irradiation time and the irradiation amount can be reduced.

Although the content of the photopolymerization initiator is theoretically determined by the amount of unsaturated bonds (the amount of energy ray hardening double bonds) present in the adhesive layer 1, or its reactivity with the reaction of the photopolymerization initiator used , But in complex mixtures It is often difficult to determine from this. As a general standard, the content of the photopolymerization initiator is preferably 0.1 to 10 parts by mass, and more preferably 1 when the energy ray-curable compound (B) is 100 parts by mass. ~5 parts by mass. If the content of the photopolymerization initiator does not reach the above range, the lack of photopolymerization will result in failure to obtain a satisfactory top-up property; if it exceeds the above range, residues that cannot contribute to photopolymerization will be generated, causing adhesion The curability of the agent layer 1 becomes insufficient.

Examples of the crosslinking agent include organic polyisocyanate compounds, organic polyepoxy compounds, and organic polyamine compounds. Among them, organic polyisocyanate compounds (isocyanate-based crosslinking agents) are preferred.

Examples of organic polyisocyanate compounds include aromatic polyisocyanate compounds, aliphatic polyisocyanate compounds, alicyclic polyisocyanate compounds, trimers of these organic polyisocyanate compounds, and organic polyisocyanate compounds and polyol compounds The terminal isocyanate polyurethane prepolymer obtained by the reaction and the like.

Specific examples of organic polyisocyanate compounds are: 2,4-toluene isocyanate, 2,6-toluene isocyanate, 1,3-benzene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4, 4'- Diisocyanate, diphenylmethane-2, 4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4, 4' -Diisocyanate, dicyclohexyl-2, 4'-diisocyanate, toluene diisocyanate trimethylolpropane adduct, lysine diisocyanate, etc.

Specific examples of organic polyepoxy compounds are: 1,3-bis(N,N'-diglycidylaminomethyl)cyclohexane, N,N,N',N'-tetraglycidyl-m-benzene Dimethylamine, ethylene glycol diglycidyl ether, 1,6-hexanediol diglycidyl ether, Trimethylolpropane diglycidyl ether, diglycidyl aniline, diglycidyl amine, etc.

Specific examples of organic polyamine compounds are: N,N'-diphenylmethane-4, 4'-bis(1-aziridinecarboxamide), hydroxymethylpropane-tri-β-aziridinepropionic acid , Tetramethylolmethane-tri-β-aziridinepropionic acid, N,N'-toluene-2, 4-bis(1-aziridine amide) triethylene melamine, etc.

When the acrylic polymer (A) (including the energy ray-curable adhesive polymer (AB)) system is 100 parts by mass, the content ratio is preferably 5 parts by mass or more, and more preferably 8 to 35 parts by mass. 12~30 parts by mass of Tejia. The blending amount of the crosslinking agent is matched according to the above range, and the storage modulus G'of the adhesive layer 1 at 23°C will be more easily adjusted to the desired range.

In addition to the other components, in addition to the cross-linking agent, dyes, pigments, deterioration prevention agents, static electricity prevention agents, flame retardants, polysiloxane compounds, chain transfer agents, etc. may be added.

The adhesive layer 1 has a polymer with a branched structure, that is, a polymerizable branched polymer. The polymerized branched polymer has a function of improving the peelability (pullability) of the cutting sheet. Body structure (specific examples include molecular weight, degree of branching structure, number of energy ray-hardenable double bonds contained in a single molecule, etc.) There is no limitation, as far as the method of obtaining such a polymerizable branched polymer is concerned, for example A monomer having more than two energy ray-curable double bonds and a monomer having an active hydrogen group and one energy ray-curable double bond in the molecule are polymerized with a monomer having one energy ray-curable double bond in the molecule, After the obtained polymer having a branched structure and an active hydrogen group are reacted, a functional group capable of forming a bond and a compound having at least one energy ray hardening double bond in the molecule are reacted.

From the viewpoint that the interaction with the acrylic polymer (A) (including the energy ray-curable adhesive polymer (AB)) can be appropriately suppressed, the polystyrene-equivalent weight average molecular weight (Mw) of the polymerizable branched polymer ) Is preferably 1,000 or more and 100,000 or less, more preferably 3,000 or more and 30,000 or less. In the polymerizable branched polymer, the number of energy ray polymerizable groups in a single molecule is not limited.

In addition, in the patent specification of the present invention, the so-called polystyrene-equivalent weight average molecular weight (Mw) value refers to using tetrahydrofuran (THF) as a solvent and measuring it in polystyrene-equivalent value through gel permeation chromatography (GPC). Value. Specifically, using a GPC measuring instrument (manufactured by TOSOH CORPORATION, "HLC-8220GPC"), it was implemented according to the following conditions.

Analysis column (Column): TSKgelGMHXL→TSKgelGMHXL→TSKgel2000HXL

Measuring temperature: 40℃

Flow rate: 1ml/min

Detector: differential refractor

(Middle layer 2)

The intermediate layer 2 can be, for example, a resin composition such as various adhesives disclosed in the past. Although there is no limit to this kind of adhesive, for example, adhesives such as rubber, acrylic, urethane, polysiloxane, and polyvinyl ether can be used. In addition, energy ray hardening type, heat foaming type, water-swelling type adhesive can also be used. For energy ray hardening (ultraviolet curing, electron beam curing, etc.) type adhesives, it is particularly preferable to use ultraviolet curing adhesives.

In the case where the material constituting the intermediate layer 2 is an acrylic material, the same material as the acrylic adhesive exemplified as the material constituting the adhesive layer 1 can also be used. If the acrylic material constituting the adhesive layer 1 The composition of the adhesive If the acrylic polymer (A) is contained in the component, the energy ray may not contain hardening properties.

If the material constituting the intermediate layer 2 is a urethane-based material, the material is preferably composed of the urethane-containing cured product described in Patent Document 4. The urethane-containing hardening system consists of urethane oligomers and/or urethane (meth)acrylate oligomers, and contains energy ray hardening type monomer compounds added as required. The hardened product of wire hardening is also good.

The specific value of the storage modulus G'of the intermediate layer 2 at 23°C is not particularly limited as long as it satisfies the relationship between the adhesive layer 1 and the storage modulus G'at 23°C. The storage modulus G'of the intermediate layer 2 at 23°C is preferably 1×10 ⁴ Pa or more and less than 1×10 ⁵ Pa, more preferably 1×10 ⁴ Pa or more and 9×10 ⁴ Pa or less, particularly preferably It is 1×10 ⁴ Pa or more and 8×10 ⁴ Pa or less. By adjusting the storage modulus G′ of the intermediate layer 2 at 23° C. to fall within this range, the tracking effect of the dicing sheet on the periphery of the electrode formation region can be more surely obtained. If the storage modulus G'of the intermediate layer 2 at 23°C is too low, the adhesive layer 1 will be traced between the protruding electrodes, and the possibility of the residue of the adhesive layer 1 between the protruding electrodes will be improve. In addition, when the intermediate layer 2 has the property of being hardened by energy ray irradiation, the storage modulus G′ of the intermediate layer 2 at 23° C. is the storage modulus before energy ray irradiation.

In addition, the thickness of the intermediate layer 2 is preferably 5 μm or more and 50 μm or less. When the thickness of the intermediate layer 2 is within the above range, the intermediate layer 2 can be more easily modified according to the modification of the adhesive layer 1. The intermediate layer 2 is preferably 10 μm or more and 40 μm or less, more preferably 15 μm or more and 35 μm or less, and particularly preferably 20 μm or more and 30 μm or less.

The thickness of the intermediate layer 2 is preferably 0.5 times or more and 1.5 times or less the height of the protruding electrode, and preferably 1.0 times or more and 1.5 times or less. Middle layer 2 The specific thickness is selected within the above-mentioned ideal range, and it is preferably determined after calculating the height of the protruding electrode of the applied wafer. With the thickness of the intermediate layer 2 within the above range, the dicing blades between the protruding electrodes are not traceable, and the dicing blades in the periphery of the electrode formation area are excellent in tracking, which can improve the dicing performance and suppress the occurrence of chip cracking .

(Substrate 3)

As for the substrate 3, although not particularly limited, for example, polyethylene films such as low density polyethylene (LDPE) film, linear low density polyethylene (LLDPE) film, high density polyethylene (HDPE) film, etc. can be used; polypropylene Film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, poly(ethylene terephthalate) film, polybutylene terephthalate Ester film, polyurethane film, polyimide film, ethylene-vinyl acetate copolymer composition film, ionomer resin film, ethylene. (Meth)acrylic copolymer film, ethylene. (Meth) acrylate copolymer film, polystyrene film, polycarbonate film, fluororesin film and its hydrogenated or modified products, etc. In addition, the above-mentioned crosslinked film and copolymer film can also be used. The above-mentioned substrate 3 may be a single film or a composite film of two or more types in combination.

In addition, as for the energy rays used for curing the adhesive layer 1 and/or the intermediate layer 2, when ultraviolet rays are used, the base material 3 is preferably made of a material having transparency to ultraviolet rays. In addition, with regard to energy rays, when an electron beam is used, it is not necessary for the base material 3 to have light permeability. When the surface of the adherend is required to be visible, the base material 3 is preferably in a transparent state, and the base material 3 can also be dyed.

In addition, the upper surface of the base material 3, that is, the base material 3 on the side where the intermediate layer 2 is formed On the surface, in order to improve the adhesion with the intermediate layer 2, a corona treatment or a primer layer may be formed. In addition, various coating processes can also be performed on the reverse side of the intermediate layer 2. The dicing sheet according to one embodiment of the present invention forms the intermediate layer 2 on a single surface of the base material 3 as described above. The adhesive layer 1 is formed. The thickness of the substrate 3 is preferably between 20 and 200 μm, preferably 25 to 110 μm, and more preferably 50 to 90 μm. If the thickness of the base material 3 is large, the bending strength of the base material 3 will increase, and the peeling angle between the wafer and the dicing blade during top picking will be difficult to increase. Therefore, the force required for top picking may increase. Sexual decline. When the thickness of the base material 3 is small, film formation may become difficult due to the material.

In the method of forming the intermediate layer 2 on the surface of the base material 3 described above, the intermediate layer composition constituting the intermediate layer 2 is applied to achieve the set film thickness on the release sheet to form the intermediate layer 2, which can be formed on the base material 3 It is also possible to transfer on the surface of the substrate, and the composition for the intermediate layer may be directly coated on the surface of the base material 3 to form the intermediate layer 2. The method of forming the adhesive layer 1 on the intermediate layer 2 can be carried out in the same way as the method of forming the intermediate layer 2 on the adhesive composition base material 3, and after the implementation as described above, the invention can be obtained A cutting sheet according to an embodiment.

In addition, in order to protect the adhesive layer 1 before use, the dicing sheet according to one embodiment of the present invention may also be laminated with a peeling sheet. The release sheet is not particularly limited, for example, a film formed of resin such as poly(ethylene terephthalate), polypropylene, polyethylene, etc., or a foamed film of the above components, or cellophane, coated paper, layer Pressed paper is equivalent to those containing polysilicone, fluorine, long-chain alkyl urethane, etc. which have been peeled with a peeling agent.

The cutting blade according to one embodiment of the present invention has The bump-shaped electrode is preferably used when pasting the electrode forming surface of the semiconductor wafer. As for the protruding electrode, a cylindrical electrode, a spherical electrode, etc. can be exemplified. The dicing sheet according to one embodiment of the present invention is particularly suitable for wafers with perforated electrodes that are more and more commonly used recently, and there is no particular limitation on the dicing sheet bonding method of semiconductor wafers.

Next, using a cutting method such as a dicing knife, the semiconductor wafer is cut into multiples for each circuit to manufacture the semiconductor wafer. The cutting depth at this time is the thickness of the semiconductor wafer, the adhesive layer 1 and the intermediate layer 2 The total thickness, plus the depth of the cutting blade wear.

After dicing, the dicing sheet according to one embodiment of the present invention is expanded as needed, the distance between the semiconductor wafers is separated, and the semiconductor wafers are lifted by a common method such as a suction collet to form a semiconductor wafer. In addition, after the adhesive layer 1 is irradiated, it is better to expand and lift the adhesive force when it is low.

Similarly, the dicing sheet according to one embodiment of the present invention includes a process of attaching it to the electrode forming surface of a semiconductor wafer with protruding electrodes, and cutting the semiconductor wafer into multiple circuits per circuit The semiconductor wafer manufacturing process and the process of picking up the semiconductor wafer can manufacture the semiconductor wafer. In such a manufacturing method, problems such as partial peeling of the dicing sheet are not likely to occur, so semiconductor wafer dicing can be carried out stably (with few defects such as wafer cracking). Therefore, by the above-mentioned manufacturing method, a semiconductor wafer of excellent quality can be stably manufactured.

The embodiments described above are described for easy understanding of the present invention, and are not intended to limit the present invention. Therefore, the elements disclosed in the above embodiments belong to all design changes within the technical scope of the present invention Or its equivalents are also included.

For example, there may be other layers between the adhesive layer 1 and the intermediate layer 2. As the property of the elastomer of this layer, in the case of the intermediate property of the adhesive layer 1 and the intermediate layer 2, it is more stable Reduce the possibility of partial peeling.

In addition, the adhesive layer 1 and the intermediate layer 2 do not have a clear boundary. In the composition of the adhesive layer 1, it is better to change continuously with the composition of the intermediate layer 2. With such a structure, it can be more To stably reduce the possibility of partial peeling. In this case, it can be specifically provided that the adhesive layer 1 and the intermediate layer 2 all contain an acrylic adhesive, and the back surface of the substrate 3 of the dicing sheet 10 is irradiated with an electron beam. In this case, polymerization adjacent to the irradiation surface will proceed preferentially, and an area corresponding to the adhesive layer 1 can be formed.

[Example]

Hereinafter, the present invention will be further specifically described through examples and the like, but the scope of the present invention is not limited by these examples and the like.

(Example 1)

[Manufacture of Adhesive Composition A]

Acrylic adhesive polymer obtained by reacting butyl acrylate/methyl methacrylate/2-hydroxyethyl acrylate=62/10/28 (mass ratio), and acrylic acid of the acrylic adhesive polymer The 2-hydroxyethyl ester unit reacts with 80 mol of acryloyloxyethyl isocyanate (MOI) per 100 mol, and the resulting energy ray-curable adhesive polymer (weight average molecular weight (Mw) in terms of polystyrene): 400,000, hereinafter also referred to as "acrylic polymer A") 100 parts by mass, photopolymerization initiator (α-hydroxycyclohexyl phenyl ketone (manufactured by BASF, "IRUGACURE 184")) 3 parts by mass, crosslinking agent (Isocyanic alkyl silicon compound (TOYOCHEM CO., LTD. System, "BHS-8515")) 8 parts by mass (conversion of solid content), polymerizable branched polymer (manufactured by NISSAN CHEMICAL INDUSTRIES LTD., "OD-007", polystyrene conversion weight average molecular weight (Mw): 14,000 ) 0.15 parts by mass, the adhesive composition A can be obtained after mixing in a solvent.

[Manufacture of intermediate layer composition]

After reacting 2-ethylhexyl acrylate/2-hydroxyethyl acrylate=95/5 (mass ratio), an acrylic polymer (weight average molecular weight (Mw) in terms of polystyrene: 900,000) was obtained. After mixing 100 parts by mass of the acrylic polymer and 0.5 parts by mass (conversion of solid content) of a cross-linking agent (alkyl isocyanate compound (manufactured by TOYOCHEM CO., LTD., "BHS-8515")) in a solvent, The composition for the intermediate layer can be obtained.

[Manufacture of cutting sheet]

Coat the release film (Lintec Corporation, "SP-PET381031 (PF)"). Drying (drying condition: 100° C., 1 minute) the above composition for an intermediate layer to obtain an intermediate layer (thickness: 20 μm) formed on a release film. Next, the intermediate layer and the substrate (ethylene methacrylic acid copolymer film, thickness: 80 μm) were attached to each other, the release film was peeled off on the intermediate layer, and the intermediate layer was transferred onto the substrate.

In addition, it was coated on a release film (manufactured by Lintec Corporation, "SP-PET381031 (PF)"). The adhesive composition was dried (drying condition: 100°C, 1 minute) to obtain an adhesive layer (thickness: 10 μm) formed on the release film.

After that, the substrate adhesion intermediate layer and the peeling film adhesion adhesive layer are attached to each other to obtain a dicing sheet.

(Example 2)

Butyl allylate/methyl methacrylate/2-hydroxyethyl acrylate =62/10/28 (mass ratio) acrylic adhesive polymer obtained by reaction, 2-hydroxyethyl acrylate unit with the acrylic adhesive polymer per 100 moles and 80 moles of acryloyloxyethyl Isocyanate (MOI) reaction to obtain 100 parts by mass of an energy ray-curable adhesive polymer (weight average molecular weight (Mw) in terms of polystyrene: 600,000), photopolymerization initiator (α-hydroxycyclohexylphenylmethyl) Ketone ("IRUGACURE 184" manufactured by BASF)) 3 parts by mass, crosslinking agent (isocyanate alkyl silicon compound ("BHS-8515" manufactured by TOYOCHEM CO., LTD.)) 8 parts by mass (conversion of solid content) , And polymerizable branched polymer (manufactured by Nissan Chemical Industries Ltd., "OD-007", polystyrene equivalent weight average molecular weight (Mw): 14,000)) 0.15 parts by mass are mixed in a solvent to obtain an adhesive Composition B.

Except that the obtained adhesive composition B was used, a dicing sheet was obtained after performing the same operation as in Example 1.

(Example 3)

100 parts by mass of acrylic polymer A, photopolymerization initiator (α-hydroxycyclohexyl phenyl ketone (manufactured by BASF, "IRUGACURE 184")) 3 parts by mass, crosslinking agent (isocyanate alkyl silicon compound ( TOYOCHEM CO., LTD., "BHS-8515")) 10 parts by mass (solid content conversion), and polymer branched polymer (NISSAN CHEMICAL INDUSTRIES LTD., "OD-007", polystyrene conversion weight average Molecular weight (Mw): 14,000) After mixing 0.15 parts by mass in a solvent, the adhesive composition C can be obtained.

Except that the obtained adhesive composition C was used, a dicing sheet was obtained after performing the same operation as in Example 1.

(Example 4)

100 parts by mass of acrylic polymer A, photopolymerization initiator (α-hydroxycyclohexyl) 3 parts by mass of phenyl phenyl ketone (manufactured by BASF, "IRUGACURE 184"), and 8 parts of cross-linking agent (isocyanate alkyl silicon compound (manufactured by TOYOCHEM CO., LTD., "BHS-8515")) 8 parts After the parts (solid content conversion) are mixed in the solvent, the adhesive composition D can be obtained.

Except that the obtained adhesive composition D was used, a dicing sheet was obtained after performing the same operation as in Example 1.

(Example 5)

Except that the thickness of the intermediate layer was 30 μm, a dicing sheet was obtained after performing the same operation as in Example 1.

(Example 6)

Except that the thickness of the adhesive layer was 30 μm, a dicing sheet was obtained after performing the same operation as in Example 1.

(Example 7)

Acrylic adhesive polymer obtained after reacting 2-ethylhexyl acrylate/2-hydroxyethyl acrylate = 80/20 (mass ratio), and 2-hydroxyethyl acrylate of the acrylic adhesive polymer The energy ray-curable adhesive polymer (weight average molecular weight (Mw) in terms of polystyrene conversion: 1 million) obtained after the reaction of 100 moles per unit with 80 moles of acryloyloxyethyl isocyanate (MOI) is 100 mass Parts, 3 parts by mass of photopolymerization initiator (α-hydroxycyclohexyl phenyl ketone (manufactured by BASF, "IRUGACURE 184")), and a cross-linking agent (isocyanic alkyl silicon compound (TOYOCHEM CO., LTD) . System, "BHS-8515")) 10 parts by mass (converted in solid content) in a solvent to obtain the adhesive composition E.

Except that the obtained adhesive composition E was used, a dicing sheet was obtained after performing the same operation as in Example 1.

(Test Example 1)

The storage modulus G'and the loss factor tan δ were measured in the adhesive composition A prepared in the embodiment, and each D was coated. Drying (drying conditions: 100° C., 1 minute) on a release film (manufactured by Lintec Corporation, “SP-PET381031 (PF)”) to obtain an adhesive layer (thickness: 25 μm) formed on the release film. The adhesive layer is peeled off on the peeling film and overlapped so that the total thickness reaches a thickness of about 1 mm to prepare a test sample related to the adhesive layer. The composition for the intermediate layer prepared in the examples was also subjected to the same operation to produce a test sample with a total thickness of about 1 mm related to the intermediate layer.

The obtained test sample was perforated in a disc shape with a diameter of 8 mm, embedded in a parallel piece, and measured using an adhesion measuring instrument (manufactured by RHEOMETRIC, "ARES)) under the following conditions. From the obtained data, the adhesive layer was obtained The storage modulus G'of the intermediate layer at 23°C and the loss factor tanδ of the adhesive layer at 23°C. As a result, the storage modulus of the adhesive layer at 23°C is 23°C for the intermediate layer The ratio of the storage modulus G′ at the time is shown in Table 1.

Measuring temperature: -30~120℃

Heating rate: 3℃/min

Measuring frequency: 1Hz

(Test Example 2) Measurement of adhesion before irradiation

For the adhesive layer shown on the dicing sheet manufactured in the example after peeling off the peeling sheet, use a rubber roller to adhere to the silicon wafer with a load of 2 kgf, and the dicing sheet is adhered to the silicon wafer at 23° C. and a relative humidity of 50 After maintaining for 20 minutes in a% environment, the adhesive force measurement of 180° tearing is performed based on JIS Z0237:2000 The results are shown in Table 1.

(Test Example 3) Confirm whether partial peeling occurs

The adhesive layer that appeared after peeling off the peeling sheet manufactured in the examples was formed using 2 rows and 5 columns of wafers with a diameter of 28 μm, a pitch of 35 μm, and a height of 12 μm using an adhesive device (Lintec The "RAD-3510F/12" manufactured by Corporation) is pasted. The conditions of the pasted equipment are as follows:

Pressure distance: 15μm

Protruding amount: 150μm

Sticking stress: 0.35MPa

Pasting speed: 5mm/sec

Pasting temperature: 23℃

Observe the adhesion state of the adhesive layer around the irregularities on the side of the dicing sheet substrate, specifically to observe the bubbles generated between the dicing sheet and the wafer. After standing for 24 hours at 23° C. and a relatively 50% environment, the adhesion state of the adhesive layer around the irregularities on the substrate side of the dicing sheet was observed again, and the occurrence of partial peeling was evaluated based on the change of the bubble phenomenon. When there is no change, it is evaluated as good (indicated by "A" in Table 1), and when bubbles are enlarged or connected between bubbles, it is evaluated as poor (indicated by "B" in Table 1).

In the cutting pieces manufactured in Examples 1 and 4 to 6 of the present invention, the storage modulus G'of the adhesive layer before curing at 23°C is larger than the storage modulus G'of the intermediate layer at 23°C, and the loss The factor tanδ is above 0.23, and the adhesion before irradiation is above 2000mN/25mm. In the case of using such a dicing sheet, partial peeling cannot be confirmed. In this regard, in the case of using the dicing sheets manufactured in Examples 2, 3, and 7 as comparative examples, partial peeling can be confirmed.

[Industry availability]

The dicing sheet according to the present invention is suitable for use as a dicing sheet for semiconductor wafers having irregularities such as through-hole electrodes (TSV).

Claims (13)

A semiconductor dicing sheet having a substrate and an adhesive layer formed on one side of the intermediate layer and the adhesive layer formed on the intermediate layer, characterized in that the adhesive layer contains a compound having an energy ray-curable double bond in the molecule; Before the adhesive layer is hardened, the storage modulus G′ under the environment of 23° C. is greater than the storage layer G′ of the intermediate layer under the environment of 23° C. For the above-mentioned dicing sheet before the adhesive layer is hardened, When JIS Z0237: 2000 is used as the benchmark to perform 180° tearing adhesion test on silicon mirror wafers, the measured adhesion force is 2000mN/25mm or more; the loss factor tan δ in the environment of 23°C before the above adhesive layer is hardened 0.44 or more. The dicing sheet according to item 1 of the patent application scope, wherein the compound having the above energy ray-curable double bond in the molecule is contained in the polymer main chain or side chain and combined with an energy ray polymerizable group to form an energy ray-curable type Adhesive polymer. The dicing sheet according to item 1 or 2 of the patent application scope, wherein the storage modulus G'of the above-mentioned intermediate layer under a 23°C environment is 1×10 ⁴ Pa or more and less than 1×10 ⁵ Pa. The dicing sheet according to item 1 or 2 of the patent application range, wherein the storage modulus G′ at 23° C. before the hardening of the adhesive layer is 3×10 ⁵ Pa or more. The dicing sheet according to item 1 or 2 of the patent application scope, wherein the adhesive layer contains an acrylic polymer having a reactive functional group and a crosslinking agent, and contains a crosslinking agent 5 per 100 parts by mass of the acrylic polymer Above mass. The cutting sheet according to item 5 of the patent application scope, wherein the crosslinking agent is an isocyanate crosslinking agent. The dicing sheet according to item 1 or 2 of the scope of the patent application, wherein it is used to stick to the wafer forming the protruding electrode. The cutting sheet according to item 7 of the patent application scope, wherein the protruding electrode is a perforated electrode. The dicing sheet according to item 7 of the patent application range, wherein the thickness of the intermediate layer is 0.5 times or more and 1.5 times or less the height of the protruding electrode. The dicing sheet according to item 1 or 2 of the patent application range, wherein the storage modulus G′ at 23° C. before the hardening of the adhesive layer is more than 4 times the storage modulus G′ at 23° C. of the intermediate layer Big. The dicing sheet according to item 1 or 2 of the patent application, wherein the thickness of the adhesive layer is 5 μm or more and 50 μm or less. The dicing sheet according to item 1 or 2 of the patent application, wherein the thickness of the intermediate layer is 5 μm or more and 50 μm or less. A method for manufacturing a semiconductor wafer, characterized in that the process of attaching the dicing sheet described in item 1 or 2 to the surface formed by the electrodes of a semiconductor wafer having protruding electrodes, the semiconductor wafer Each circuit is individually cut into a plurality of processes to make a semiconductor wafer, and the process to pick up the above semiconductor wafer.

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