TWI677050B - Carrier for temporary bonded wafers - Google Patents

Carrier for temporary bonded wafers Download PDF

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TWI677050B
TWI677050B TW105106525A TW105106525A TWI677050B TW I677050 B TWI677050 B TW I677050B TW 105106525 A TW105106525 A TW 105106525A TW 105106525 A TW105106525 A TW 105106525A TW I677050 B TWI677050 B TW I677050B
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layer
carrier
wafer
metal
porous
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TW201643990A (en
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戴維 高森斯
Davy Goossens
傑瑞米 迪貝梅克
Jeremie De Baerdemaeker
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比利時商Nv貝卡特股份有限公司
Nv Bekaert Sa
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/002Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature
    • B22F7/004Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature comprising at least one non-porous part
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/01Layered products comprising a layer of metal all layers being exclusively metallic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/043Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C14/00Alloys based on titanium
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04Alloys based on tungsten or molybdenum
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C38/00Ferrous alloys, e.g. steel alloys
    • C22C38/18Ferrous alloys, e.g. steel alloys containing chromium
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/04Alloys based on a platinum group metal
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00Aspects linked to processes or compositions used in powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C47/00Making alloys containing metallic or non-metallic fibres or filaments
    • C22C47/14Making alloys containing metallic or non-metallic fibres or filaments by powder metallurgy, i.e. by processing mixtures of metal powder and fibres or filaments

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本發明揭示一種可於其上暫時接合晶圓之載具。該載具包括板狀層壓板。該板狀層壓板包括第一層。該第一層包括箔片、薄片或板片。該板狀層壓板包括第二層,該第二層包括具有三維開放細孔的多孔性金屬介質。該第一層係永久接合至該多孔性金屬介質,藉此閉合在該第一層被定位之該側邊處的該多孔性金屬介質之該細孔。該第二層包括用於被接合在晶圓上之接觸層。該接觸層包括金屬纖維與金屬粉末之混合物。該金屬纖維與該金屬粉末係彼此永久接合在其接觸點處。 The invention discloses a carrier on which a wafer can be temporarily bonded. The carrier includes a plate-like laminate. The plate-like laminate includes a first layer. The first layer includes a foil, sheet or plate. The plate-like laminate includes a second layer including a porous metal medium having three-dimensional open pores. The first layer is permanently bonded to the porous metal medium, thereby closing the pores of the porous metal medium at the side where the first layer is positioned. The second layer includes a contact layer for bonding on a wafer. The contact layer includes a mixture of metal fibers and metal powder. The metal fiber and the metal powder are permanently bonded to each other at their contact points.

Description

用於暫時接合晶圓之載具 Carrier for temporarily bonding wafers

本發明係關於用於晶圓之載具之領域。該載具可在其處理期間(例如,在晶圓薄化時)被使用於晶圓之暫時接合。 The invention relates to the field of carriers for wafers. The carrier can be used for temporary bonding of wafers during its processing (for example, when the wafer is thinning).

利用將晶圓暫時接合至一載具上以允許該晶圓之處理係習知的。一個挑戰係在於隨後將該晶圓從該載具剝離。已有描述不同之載具藉由溶劑以允許剝離。在此程序中,被使用於暫時接合之黏著劑係被化學性地溶解。 The use of temporary bonding of a wafer to a carrier to allow processing of the wafer is conventional. One challenge is to subsequently peel the wafer from the carrier. Different carriers have been described to allow peeling with solvents. In this procedure, the adhesive used for temporary bonding is chemically dissolved.

美國專利US2009/197070A中描述一種支撐板片,該支撐板片係接合至一基板以便支撐該基板。在該支撐板片中,複數個開口從接合表面滲透穿過至非接合表面。該接合表面面向該基板,而該非接合表面則面向該接合表面。包含第一區域以及圍繞該第一區域之第二區域之一多孔性區域係被形成於該接合表面上;且該第一區域具有大於該第二區域之開口比率。依此方式,便可實現一種支撐板片,該支撐板片在該半導體晶圓上之處理操作期間可以藉 由溶劑輕易地從半導體晶圓剝離,但不會輕易地從基板脫落。 US patent US2009 / 197070A describes a support plate that is bonded to a substrate in order to support the substrate. In the support plate, a plurality of openings penetrate from the joining surface to the non-joining surface. The bonding surface faces the substrate, and the non-bonding surface faces the bonding surface. A porous region including a first region and a second region surrounding the first region is formed on the bonding surface; and the first region has an opening ratio larger than that of the second region. In this way, a support plate can be realized, which can be borrowed during the processing operation on the semiconductor wafer. It is easily peeled from the semiconductor wafer by the solvent, but does not easily fall off the substrate.

美國專利US2005/0173064A1中提供具有一結構之支撐板片,其中在基板(諸如一半導體晶圓)被薄化後的一段短暫時段內,可將一溶劑供給至位於該支撐板片與該基板之間之黏著劑層。該文獻亦揭示一種用於剝離該支撐板片之方法。該支撐板片可以具有一個較該半導體晶圓更大之直徑,且在該支撐板片中形成滲透孔。該支撐板片之外周邊部分係一個在其中沒有形成任何滲透孔之平坦部分。當乙醇從支撐板片上方被傾倒,乙醇通過滲透孔到達黏著劑層,溶解並且移除黏著劑層。 The US patent US2005 / 0173064A1 provides a supporting plate having a structure in which a solvent can be supplied to the supporting plate and the substrate in a short period after the substrate (such as a semiconductor wafer) is thinned. Between adhesive layers. The document also discloses a method for peeling the support plate. The support plate may have a larger diameter than the semiconductor wafer, and a penetration hole is formed in the support plate. The outer peripheral portion of the support plate is a flat portion in which no penetration hole is formed. When the ethanol is poured from above the support plate, the ethanol passes through the perforation holes to reach the adhesive layer, dissolves and removes the adhesive layer.

美國專利US8882096B2中揭示一種用於藉由插入一黏著劑層來支撐晶圓之表面之穿孔支撐板片。該穿孔支撐板片具有滲透孔。用以溶解使該穿孔支撐板片藉由其被黏附至晶圓之該黏著劑之溶劑係滲透穿過該支撐板片之穿孔。該穿孔支撐板片包括一個用於避免撓曲之加固部分。 US patent US8882096B2 discloses a perforated support plate for supporting the surface of a wafer by inserting an adhesive layer. The perforated support plate has a permeation hole. A solvent used to dissolve the perforated support plate through the perforation of the support plate through the adhesive of the adhesive which is adhered to the wafer. The perforated support plate includes a reinforced portion for preventing deflection.

US2004/0231793A1揭示使用一多孔性燒結金屬作為用於晶圓之暫時載具。該載具可以藉由通過該暫時載具之厚度之溶劑穿過其之細孔以溶解被使用以黏附該晶圓至該暫時載具之該黏著劑而被釋放。 US2004 / 0231793A1 discloses the use of a porous sintered metal as a temporary carrier for wafers. The carrier can be released by passing a solvent through the thickness of the temporary carrier through its pores to dissolve the adhesive used to adhere the wafer to the temporary carrier.

美國專利US2009325467A中描述了一種程序,其中晶圓可被薄化而不會發生波紋。一支撐板片具有多個穿孔。一晶圓之電路形成表面係藉由黏著劑構件而被黏附至支撐板片之一表面,而具有100微米或更大厚度且在一個 面上具有一黏著劑層之波紋防止構件係被黏附至另一表面。因此在該穿孔之兩末端處之該開口係被封閉。該支撐板片係經由該波紋防止構件而被真空吸附至一支撐台,且該晶圓被研磨/拋光以薄化該晶圓。該波紋防止構件被剝離,且溶劑通過該穿孔而滲透至該黏著劑構件中以將該晶圓從該支撐板片分離。 A procedure is described in US patent US2009325467A, in which a wafer can be thinned without waviness. A support plate has a plurality of perforations. The circuit-forming surface of a wafer is adhered to one surface of a supporting plate by an adhesive member, and has a thickness of 100 micrometers or more and an A corrugation preventing member having an adhesive layer on the face is adhered to the other surface. The openings at the two ends of the perforation are therefore closed. The support plate is vacuum-sucked to a support table via the ripple prevention member, and the wafer is ground / polished to thin the wafer. The corrugation preventing member is peeled off, and the solvent penetrates into the adhesive member through the perforation to separate the wafer from the supporting plate.

美國專利US2001005043A中揭示一種技術,其具有高產量且在短時間內可執行晶圓之薄化且從一支撐基板將其分離。一無孔支撐基板被接合至具有孔之支撐基板之第二表面,其係利用藉由加熱而被融化以便堵塞該孔之黏著劑層來達成。一晶圓利用藉由溶劑而被溶化之黏著劑層而被接合至具有孔之該支撐基板之第一表面。該晶圓藉由研磨與蝕刻而被薄化。該黏著劑層藉由加熱而被融化,於是具有孔之支撐基板相對於無孔支撐基板滑動以藉此將具有孔之支撐基板與無孔支撐基板分離。該黏著劑層接著藉由溶劑而被溶解穿過界定在具有孔之支撐基板中之該孔。藉此該晶圓與具有孔之支撐基板分離。由於在該晶圓上沒有加諸任何負載,因此可以避免晶圓之損壞。 US patent US2001005043A discloses a technique that has a high yield and can perform thinning of a wafer and separate it from a supporting substrate in a short time. A non-porous support substrate is bonded to the second surface of the support substrate with holes, which is achieved by using an adhesive layer that is melted by heating to plug the holes. A wafer is bonded to a first surface of the support substrate having a hole using an adhesive layer which is dissolved by a solvent. The wafer is thinned by grinding and etching. The adhesive layer is melted by heating, so that the support substrate with holes slides relative to the non-porous support substrate to thereby separate the support substrate with holes from the non-porous support substrate. The adhesive layer is then dissolved through the hole defined in the support substrate having the hole by a solvent. As a result, the wafer is separated from the supporting substrate having holes. Since no load is applied to the wafer, damage to the wafer can be avoided.

本發明之一個目的係在於提供一個用於暫時接合晶圓之載具。該目的係在於提供此一具有改良性質之載具。本發明之一個目的係在於提供一個載具,其藉由利用溶劑滲濾通過該載具之細孔來溶解該黏著劑而使該晶圓易於剝 離。本發明之一個目的係在於提供一個載具,其允許晶圓可以被薄化以及進一步之處理而獲得所需之品質規範。 It is an object of the present invention to provide a carrier for temporarily bonding wafers. The object is to provide such a vehicle with improved properties. It is an object of the present invention to provide a carrier which makes the wafer easy to peel by dissolving the adhesive through the pores of the carrier by diafiltration with a solvent. from. It is an object of the present invention to provide a carrier which allows a wafer to be thinned and further processed to obtain a required quality specification.

本發明之第一態樣係一種載具,晶圓可以被暫時接合至其上(例如,以允許晶圓薄化)。該載具包括板狀層壓板。該板狀層壓板包括第一層。該第一層包括箔片、薄片或板片。該板狀層壓板包括第二層,該第二層包括具有三維開放細孔的多孔性金屬介質。該第一層係永久接合至該多孔性金屬介質,藉此閉合在該第一層被定位處之該側邊處的該多孔性金屬介質之細孔。該第二層包括用於被接合在晶圓上之接觸層。該接觸層包括金屬纖維與金屬粉末之混合物。該金屬纖維與該金屬粉末係在其之接觸點處彼此永久接合。 A first aspect of the present invention is a carrier to which a wafer can be temporarily bonded (eg, to allow wafer thinning). The carrier includes a plate-like laminate. The plate-like laminate includes a first layer. The first layer includes a foil, sheet or plate. The plate-like laminate includes a second layer including a porous metal medium having three-dimensional open pores. The first layer is permanently bonded to the porous metal medium, thereby closing the pores of the porous metal medium at the side where the first layer is positioned. The second layer includes a contact layer for bonding on a wafer. The contact layer includes a mixture of metal fibers and metal powder. The metal fiber and the metal powder are permanently bonded to each other at their contact points.

較佳地,該載具具有藉由一直線側邊由一圓形圓周偏離之圓盤的形狀。該直線側邊係為了匹配欲被接合至該工作載具之晶圓之形狀而存在。較佳地,該圓盤之圓形區段之直徑係適合於6英吋、8英吋或12英吋之晶圓。此意指該圓盤之直徑係等於或略大於該晶圓之直徑。 Preferably, the carrier has a shape of a disc that is deviated from a circular circumference by a straight side. The straight sides exist to match the shape of the wafer to be bonded to the work carrier. Preferably, the diameter of the circular section of the disc is suitable for 6-inch, 8-inch or 12-inch wafers. This means that the diameter of the disk is equal to or slightly larger than the diameter of the wafer.

該載具具有之優點在於剝離溶劑可以流動穿過該多孔性金屬介質之三維開放細孔,從黏合至晶圓上之該載具之側邊邊緣,穿過該多孔性金屬介質之整個體積。依此方式,該剝離溶劑可以快速到達將該晶圓附接至該載具之該黏著劑層。該載具具有足夠之硬度以藉由不同之程序步驟來輸送該接合晶圓而不會有彎曲或其他機械變形或應力之發生。該載具具有之進一步優點在於其具有足夠之機械性質(例如硬度)以允許達到該薄化晶圓所需之尺寸性質(諸如總厚度差異(TTV)、弓彎以及翹曲)。本發明進一步之優點在於該載具可以被使用多次。此本發明載具進一步之優點係在於存在於該薄化晶圓上之波紋係被減少或甚至完全消除。頃相信,此驚人之有益效果係藉由在該接觸層中位於該纖維之間而存在於該細孔中之該粉末顆粒所產生,藉此減少該細孔尺寸,導致了該接觸層下表面粗糙度。本發明之該載具進一步之優點係在於較少黏著劑被用於將該晶圓接合至該載具上;此亦導致更快速之剝離。 The carrier has the advantage that the stripping solvent can flow through the three-dimensional open pores of the porous metal medium, from the side edges of the carrier bonded to the wafer, through the entire volume of the porous metal medium. In this way, the stripping solvent can quickly reach the adhesive layer that attaches the wafer to the carrier. The carrier has sufficient hardness to transport the bonded wafer through different process steps without bending or other mechanical deformation or stress. The carrier has a further advantage in that it has sufficient mechanical properties (such as hardness) to allow the dimensional properties (such as total thickness difference (TTV), bow and warpage) required for the thinned wafer to be achieved. A further advantage of the invention is that the carrier can be used multiple times. A further advantage of this carrier of the invention is that the corrugations present on the thinned wafer are reduced or even completely eliminated. It is believed that this surprisingly beneficial effect is produced by the powder particles existing in the pores between the fibers in the contact layer, thereby reducing the size of the pores, resulting in the lower surface of the contact layer Roughness. A further advantage of the carrier of the present invention is that less adhesive is used to bond the wafer to the carrier; this also results in faster peeling.

在一較佳實施例中,該第一層係包括或由金屬或玻璃或矽或陶瓷所組成。 In a preferred embodiment, the first layer comprises or consists of metal or glass or silicon or ceramic.

在一較佳實施例中,該多孔性金屬介質包括一額外多孔性層。該額外多孔性層被提供於該第一層與該接觸層之間。該額外多孔性層包括金屬纖維、金屬粉末或金屬發泡體。該額外多孔性層之具體實例係包含燒結或焊接金屬纖維非織物、燒結粉末以及金屬發泡體。 In a preferred embodiment, the porous metal medium includes an additional porous layer. The additional porous layer is provided between the first layer and the contact layer. The additional porous layer includes a metal fiber, a metal powder, or a metal foam. Specific examples of the additional porous layer include a sintered or welded metal fiber nonwoven fabric, a sintered powder, and a metal foam.

較佳地,該第一層係包括或由金屬所組成。較佳地,該第一層包括或由金屬箔片、金屬板片或金屬薄片所組成。較佳地,該第一層包括與該多孔性金屬介質相同的金屬或合金。 Preferably, the first layer comprises or consists of a metal. Preferably, the first layer includes or consists of a metal foil, a metal plate or a metal sheet. Preferably, the first layer includes the same metal or alloy as the porous metal medium.

較佳地,該多孔性金屬介質包括或由不銹鋼、鈦、鈀或鎢所組成;或是包括或由包括高於50%重量百分比之鈦、鈀或鎢之合金所組成。更佳地,針對其中該第一層係包括或由金屬箔片、金屬板片或金屬薄片所組成之實施 例,該第一層係包括與該多孔性金屬介質相同的金屬或金屬合金。 Preferably, the porous metal medium comprises or consists of stainless steel, titanium, palladium or tungsten; or it comprises or consists of an alloy comprising more than 50% by weight of titanium, palladium or tungsten. More preferably, for implementations in which the first layer includes or consists of a metal foil, a metal plate, or a metal foil For example, the first layer system includes the same metal or metal alloy as the porous metal medium.

在一較佳實施例中,該第一層係包括金屬且該第一層係藉由金屬鍵而永久接合至該多孔性金屬介質,較佳地藉由擴散接合,諸如燒結或藉由焊接(且較佳地係藉由焊接,其中在該焊接程序中沒有使用任何額外之填充材料)。一種可使用之焊接程序的實例係電容放電焊接(CDW)。 In a preferred embodiment, the first layer comprises a metal and the first layer is permanently bonded to the porous metal medium by a metal bond, preferably by diffusion bonding such as sintering or by welding ( And preferably by welding, where no additional filler material is used in the welding procedure). An example of a welding procedure that can be used is capacitor discharge welding (CDW).

在一較佳實施例中,該第一層藉由黏著劑而被永久接合至該多孔性金屬介質。該黏著劑可以從當在將該暫時接合之晶圓從該載具剝離時不被所使用之該剝離液體所侵蝕之黏著劑之廣泛的範圍中來選擇。合適之黏著劑之實例係基於環氧樹脂之黏著劑。 In a preferred embodiment, the first layer is permanently bonded to the porous metal medium by an adhesive. The adhesive can be selected from a wide range of adhesives that are not corroded by the stripping liquid used when the temporarily bonded wafer is peeled from the carrier. An example of a suitable adhesive is an epoxy-based adhesive.

較佳地,該載具具有介於650微米與750微米之間之厚度。 Preferably, the carrier has a thickness between 650 microns and 750 microns.

較佳地,該第一層具有介於20微米與650微米之間之厚度,更佳地介於150微米與650微米之間。 Preferably, the first layer has a thickness between 20 microns and 650 microns, more preferably between 150 microns and 650 microns.

較佳地,該多孔性金屬介質具有介於50微米與150微米之間之厚度,更佳地介於50微米與150微米之間。 Preferably, the porous metal medium has a thickness between 50 microns and 150 microns, and more preferably between 50 microns and 150 microns.

較佳地,該多孔性金屬介質之多孔率係高於20%且更佳地係高於30%,更佳地係高於40%,最佳地係高於50%,最佳地係高於55%。且較佳地,該多孔率係小於80%,更佳地係小於60%。此實施例協同作用地增加改良該載具之機械性質,使得該晶圓在被接合至該載具上時之 處理之後,可以達到尺寸特性之要求。 Preferably, the porosity of the porous metal medium is higher than 20% and more preferably higher than 30%, more preferably higher than 40%, optimally higher than 50%, and optimally higher. At 55%. And preferably, the porosity is less than 80%, and more preferably less than 60%. This embodiment synergistically increases and improves the mechanical properties of the carrier, so that the wafer when bonded to the carrier After processing, the requirements of dimensional characteristics can be achieved.

較佳地,該接觸層之多孔率係高於20%且較佳地係高於30%。且較佳地該接觸層之多孔率係小於50%,更佳地係小於40%。 Preferably, the porosity of the contact layer is higher than 20% and more preferably higher than 30%. The porosity of the contact layer is preferably less than 50%, and more preferably less than 40%.

較佳地,在該接觸層中之該金屬纖維之相當直徑係介於2與50微米之間,更佳地係介於2與40微米之間,最佳地係介於2與25微米之間。甚至更佳地,係介於10與25微米之間。具有相當直徑意指該圓形之直徑具有與纖維之該橫截面相同之面積,其橫截面形狀可以由一圓形形狀偏離。 Preferably, the equivalent diameter of the metal fiber in the contact layer is between 2 and 50 microns, more preferably between 2 and 40 microns, and most preferably between 2 and 25 microns. between. Even better, it is between 10 and 25 microns. Having a considerable diameter means that the diameter of the circle has the same area as the cross-section of the fiber, and the cross-sectional shape may deviate from a circular shape.

較佳地,在該接觸層中之該金屬粉末係具有在2至30微米之範圍內之直徑,較佳地係在2至20微米之範圍內,更佳地係在2至10微米之範圍內。 Preferably, the metal powder in the contact layer has a diameter in the range of 2 to 30 microns, preferably in the range of 2 to 20 microns, more preferably in the range of 2 to 10 microns Inside.

在一較佳實施例中,該多孔性金屬介質具有用於被接合在晶圓上之表面,其中該表面係平行於該第一層。該表面係經拋光而使得該載具具有小於10微米之總厚度差異(TTV)。該總厚度差異(TTV)係藉由落差儀在該材料之表面之上所任意選擇的5個點上之測量來進行測量。針對該測試方法,該落差儀之直徑係5.99微米。該TTV係被定義為介於該最大厚度測量與該最小厚度測量之間之差異。 In a preferred embodiment, the porous metal medium has a surface for being bonded to a wafer, wherein the surface is parallel to the first layer. The surface is polished so that the carrier has a total thickness difference (TTV) of less than 10 microns. The total thickness difference (TTV) is measured by a drop meter at five points selected arbitrarily above the surface of the material. For this test method, the diameter of the drop meter is 5.99 microns. The TTV system is defined as the difference between the maximum thickness measurement and the minimum thickness measurement.

在一較佳實施例中,該多孔性金屬介質包括第一多孔性層以及第二多孔性層。該第一多孔性層係被提供於該第一層與該第二多孔性層之間。該第一多孔性層之多孔率高於該第二多孔性層之多孔率。在一更佳之實施例中,該第 一多孔性層被直接地接合至該第一層。在另一實施例中,該第二多孔性層被直接地接合至該第一多孔性層。在另一實施例中,該第二多孔性層被提供以用於被接合至該晶圓上。在一更佳之實施例中,該第一多孔性層包括第一相當直徑之金屬纖維而該第二多孔性層包括第二相當直徑之金屬纖維。在一最佳實施例中,該第一相當直徑大於該第二相當直徑。 In a preferred embodiment, the porous metal medium includes a first porous layer and a second porous layer. The first porous layer is provided between the first layer and the second porous layer. The porosity of the first porous layer is higher than the porosity of the second porous layer. In a more preferred embodiment, the first A porous layer is directly bonded to the first layer. In another embodiment, the second porous layer is directly bonded to the first porous layer. In another embodiment, the second porous layer is provided for being bonded to the wafer. In a more preferred embodiment, the first porous layer includes metal fibers of a first equivalent diameter and the second porous layer includes metal fibers of a second equivalent diameter. In a preferred embodiment, the first equivalent diameter is larger than the second equivalent diameter.

在一較佳實施例中,該多孔性金屬介質之該側邊邊緣被永久密封而使得沒有任何開放細孔存在於該多孔性金屬介質之該側邊邊緣處。 In a preferred embodiment, the side edge of the porous metal medium is permanently sealed so that no open pores exist at the side edge of the porous metal medium.

該側邊邊緣係可以藉由焊接該邊緣而被密封,或藉由雷射切割出該多孔性金屬介質之尺寸以及形狀之操作而被密封,或在該第一層接合至該第二層之後藉由焊接該邊緣或藉由雷射切割出該第一層與該第二層之組合之尺寸以及形狀之操作而被密封。 The side edge can be sealed by welding the edge, or sealed by laser cutting out the size and shape of the porous metal medium, or after the first layer is bonded to the second layer It is sealed by welding the edge or cutting the size and shape of the combination of the first layer and the second layer by laser.

另一種用於產生該密封邊緣之方法係藉由加工一板片使得產生該直立邊緣,然後該多孔性金屬介質被插入在藉由加工而產生之該杯狀物中,且隨後該多孔性金屬介質被接合至該第一層上。當暫時接合之晶圓待從具有永久密封之邊緣之載具被剝離時,最初在該多孔性金屬介質中沒有發生任何剝離液體之毛細作用。在位於該載具與該晶圓之間之黏著劑之該薄層上發生初始的剝離。當此薄的黏著劑層被分解時,藉由在該多孔性金屬介質中具有增加之該剝離液體通過藉由溶解在該邊緣處之黏膠層所產生之開口之 毛細作用而增加該剝離速度。 Another method for producing the sealed edge is to process a plate so that the upright edge is generated, and then the porous metal medium is inserted into the cup produced by processing, and then the porous metal The medium is bonded to the first layer. When the temporarily bonded wafers are to be peeled from the carrier with permanently sealed edges, initially no capillary action of the peeling liquid occurs in the porous metal medium. Initial peeling occurs on the thin layer of adhesive located between the carrier and the wafer. When the thin adhesive layer is decomposed, the peeling liquid by having an increase in the porous metal medium passes through the openings created by the adhesive layer dissolved at the edge. Capillary action increases this peeling speed.

較佳地,該載具被提供使得當施加4巴之壓力至其上時,該載具之永久變形係小於在施加該壓力之前其之原始厚度之5%。此可以藉由在20秒之時段期間於施加4巴之壓力之前以及之後測量該載具之厚度來測試。依照此實施例,一載具可以藉由預應力該載具或該多孔性金屬層或在其之中之多孔性金屬層來製造,使得可限制未來之永久變形。此實施例在晶圓被暫時黏附至該載具時之處理(例如薄化)之後可驚人地協同作用地改良了該晶圓之性質。 Preferably, the carrier is provided such that when a pressure of 4 bar is applied thereto, the permanent deformation of the carrier is less than 5% of its original thickness before the pressure is applied. This can be tested by measuring the thickness of the vehicle before and after applying a pressure of 4 bar during a period of 20 seconds. According to this embodiment, a carrier can be manufactured by pre-stressing the carrier or the porous metal layer or a porous metal layer therein, so that future permanent deformation can be limited. This embodiment can surprisingly synergistically improve the properties of the wafer after processing (such as thinning) when the wafer is temporarily adhered to the carrier.

本發明之第二態樣係晶圓以及如在本發明之第一態樣中之載具之總成(或堆疊)。該晶圓係藉由黏著劑而被接合至該接觸層上。較佳地,該黏著劑係可以藉由將合適之剝離液體接觸該黏著劑而被移除之黏著劑。 The second aspect of the present invention is an assembly (or stack) of a wafer and a carrier as in the first aspect of the present invention. The wafer is bonded to the contact layer by an adhesive. Preferably, the adhesive is an adhesive that can be removed by contacting a suitable release liquid with the adhesive.

本發明之第三態樣係一種用於處理晶圓之方法,包括以下步驟藉由黏著劑將晶圓暫時黏附至如在本發明之第一態樣中之載具,處理暫時黏附至該載具之該晶圓,例如薄化該晶圓;藉由剝離液體破壞位在該晶圓與該載具之間之暫時黏著劑接合,從該載具剝離該晶圓;其中,該剝離液體從藉由黏著劑被接合至該載具之該晶圓之該總成的該側邊邊緣滲透至該多孔性金屬介質中。 A third aspect of the present invention is a method for processing a wafer, including the following steps: temporarily attaching the wafer to a carrier as in the first aspect of the present invention by an adhesive, and processing temporarily adhering to the carrier The wafer is, for example, thinned; the wafer is stripped from the carrier by a stripping liquid that destroys the temporary adhesive bond between the wafer and the carrier; The side edge of the assembly of the wafer bonded to the carrier by the adhesive penetrates into the porous metal medium.

在剝離暫時接合至該載具之晶圓期間以及之後,該第 一層保持接合至該多孔性金屬介質。 During and after stripping the wafer temporarily bonded to the carrier, the first One layer remains bonded to the porous metal medium.

在一較佳之方法中,該載具在剝離之後被重複使用一或多次以用於將另一個晶圓暫時黏附至其上。較佳地,該載具可以被使用至少5次,更佳地係至少10次。 In a preferred method, the carrier is reused one or more times after peeling for temporarily attaching another wafer thereto. Preferably, the vehicle can be used at least 5 times, more preferably at least 10 times.

100‧‧‧載具 100‧‧‧ Vehicle

102‧‧‧直線側邊 102‧‧‧Straight side

200‧‧‧載具 200‧‧‧ Vehicle

210‧‧‧第一層 210‧‧‧First floor

226‧‧‧額外多孔性層 226‧‧‧ Extra porous layer

260‧‧‧接觸層 260‧‧‧contact layer

301‧‧‧總成或堆疊 301‧‧‧Assembly or stack

370‧‧‧暫時黏著劑層 370‧‧‧Temporary adhesive layer

380‧‧‧晶圓 380‧‧‧ wafer

圖1係展示依照本發明之一例示性載具之俯視圖。 FIG. 1 is a top view showing an exemplary vehicle according to the present invention.

圖2係展示依照本發明之一例示性載具之橫截面。 Figure 2 shows a cross section of an exemplary vehicle according to the present invention.

圖3係展示一個暫時接合至本發明載具之晶圓總成之實例。 FIG. 3 shows an example of a wafer assembly temporarily bonded to a carrier of the present invention.

圖1係展示依照本發明之載具100之俯視圖。該載具100具有藉由直線側邊102由一圓形圓周(具有直徑D)偏離之圓盤的形狀。該直線側邊102係為了匹配欲被接合至該工作載具之晶圓之形狀而存在。 FIG. 1 is a top view showing a carrier 100 according to the present invention. The carrier 100 has a shape of a disc deviated from a circular circumference (having a diameter D) by the straight side 102. The straight side 102 exists to match the shape of the wafer to be bonded to the work carrier.

圖2係展示依照本發明之例示性載具200之橫截面。該載具200包括第一層210,其中該第一層係金屬箔片或金屬薄片。該載具200進一步包括一額外之多孔性層226(例如一燒結非織物金屬纖維網)。該載具包括一接觸層260,其包含在接觸點處彼此燒結之金屬粉末顆粒以及金屬纖維之混合物。 FIG. 2 shows a cross section of an exemplary vehicle 200 according to the present invention. The carrier 200 includes a first layer 210, wherein the first layer is a metal foil or a metal sheet. The carrier 200 further includes an additional porous layer 226 (eg, a sintered non-woven metal fiber web). The carrier includes a contact layer 260 containing a mixture of metal powder particles and metal fibers sintered at each other at the contact points.

較佳地,該金屬箔片或金屬薄片、該金屬纖維以及該金屬粉末係使用相同之金屬或合金。 Preferably, the metal foil or metal sheet, the metal fiber, and the metal powder are made of the same metal or alloy.

不同之層係藉由燒結或藉由焊接(例如電容放電焊接)而彼此永久接合。可以使用燒結多孔性金屬粉末層及/或金屬發泡體層以替代該非織物金屬纖維網來作為額外層。例如,玻璃、陶瓷或矽薄片或板片可以替代金屬箔片或金屬薄片而被使用以作為第一層。該多孔性金屬層(該額外多孔性層以及該接觸層)係藉由金屬鍵(例如燒結)而彼此接合,且與該第一層之接合可以接著藉由黏著劑(例如環氧樹脂)來完成。 The different layers are permanently bonded to each other by sintering or by welding (such as capacitor discharge welding). Instead of the non-woven metal fiber web, a sintered porous metal powder layer and / or a metal foam layer may be used as an additional layer. For example, glass, ceramic or silicon flakes or plates can be used as the first layer instead of metal foils or metal flakes. The porous metal layers (the additional porous layer and the contact layer) are bonded to each other by metal bonds (for example, sintering), and the bonding to the first layer can then be performed by an adhesive (such as epoxy resin) carry out.

圖3係展示一個被暫時接合至載具之晶圓之總成或堆疊301之實例(例如圖2之實例之載具200)。在圖2中相同之元件符號係與在圖2中所描述者具有相同之意義。暫時黏著劑層370係被施加至載具200之多孔性金屬介質上,晶圓380係藉由此黏著劑層370而被暫時接合至載具200。 FIG. 3 shows an example of an assembly or stack 301 of wafers temporarily bonded to a carrier (eg, carrier 200 of the example of FIG. 2). The same component symbols in FIG. 2 have the same meanings as those described in FIG. 2. The temporary adhesive layer 370 is applied to the porous metal medium of the carrier 200, and the wafer 380 is temporarily bonded to the carrier 200 by the adhesive layer 370.

作為一個實例,已經製造一個用於8吋晶圓之載具。作為第一層,已經使用一個200微米厚度之鈦箔片。厚度500微米與多孔率56%之非織物鈦纖維網(該鈦纖維之22微米相當直徑)已經被施加在該鈦箔片之頂部上。該鈦箔片與該非織物鈦纖維網之組合已經被燒結在一起。已經製備好一鈦粉末漿液。該漿液包括20%重量百分比之20微米直徑之鈦粉末,在水中,包含添加少量的合適之分散劑。一均勻之漿液層已經被施加至該燒結纖維網/鈦板片之組合之該非織物鈦纖維網側邊上。該應用可以藉由網版印刷棧完成,這係利用具有在其之表面之上均勻分佈之開 口的網版。施加200mg/cm3之體積(該體積係基於該多孔性非織物纖維介質)。該粉末漿液滲透至該非織物鈦纖維網,且產生鈦粉末與纖維之混合物,藉此產生該載具之接觸層,藉此該接觸層包括鈦纖維與鈦粉末之混合物。該產品在180℃被乾燥30分鐘,隨後於真空狀態下在800℃進行燒結步驟1小時,藉此於接觸鈦粉末顆粒與鈦纖維之間產生燒結接合。該燒結係在其中該載具之厚度保持相同之狀態下被執行。在施加且燒結該鈦粉末漿液至該載具之前以及之後,該細孔尺寸之分佈係利用孔度計(Porolux 100)來測量。在施加該鈦粉末之前,該多孔性部分之平均細孔尺寸係55至65微米,而在施加該鈦粉末混合物之後,該平均細孔尺寸係降低至45微米。 As an example, a carrier for an 8-inch wafer has been manufactured. As the first layer, a 200-micron-thick titanium foil has been used. A non-woven titanium fiber web with a thickness of 500 micrometers and a porosity of 56% (the equivalent diameter of the 22 micrometers of the titanium fiber) has been applied on top of the titanium foil. The combination of the titanium foil and the nonwoven titanium fiber web has been sintered together. A titanium powder slurry has been prepared. The slurry comprises 20% by weight of a 20 micron diameter titanium powder, and a small amount of a suitable dispersant is added to the water. A uniform slurry layer has been applied to the non-woven titanium fiber web side of the sintered fiber web / titanium sheet combination. The application can be accomplished by a screen printing stack, which utilizes a screen having openings evenly distributed over its surface. A volume of 200 mg / cm 3 was applied (the volume is based on the porous non-woven fibrous medium). The powder slurry penetrates into the non-woven titanium fiber web and generates a mixture of titanium powder and fiber, thereby generating a contact layer of the carrier, whereby the contact layer includes a mixture of titanium fiber and titanium powder. The product was dried at 180 ° C for 30 minutes, and then subjected to a sintering step at 800 ° C for 1 hour under a vacuum state, thereby producing a sintered joint between the contacted titanium powder particles and the titanium fiber. The sintering is performed in a state where the thickness of the carrier remains the same. Before and after the titanium powder slurry is applied and sintered to the carrier, the distribution of the pore size is measured using a porometer (Porolux 100). Before the titanium powder was applied, the average pore size of the porous portion was 55 to 65 micrometers, and after the titanium powder mixture was applied, the average pore size was reduced to 45 micrometers.

Claims (15)

一種可於其上暫時接合晶圓之載具,其中該載具包括板狀層壓板,該板狀層壓板包括:第一層,其中該第一層包括箔片、薄片或板片;及第二層,包括具有三維開放細孔之多孔性金屬介質;其中,該第一層係永久接合至該多孔性金屬介質,藉此閉合在該第一層被定位之側邊處的該多孔性金屬介質之該細孔;其中,該第二層包括用於被接合在晶圓上之接觸層,其中,該接觸層包括金屬纖維與金屬粉末之混合物,其中,該金屬纖維與該金屬粉末係彼此永久接合在其接觸點處。A carrier on which a wafer can be temporarily bonded, wherein the carrier includes a plate-like laminate including: a first layer, wherein the first layer includes a foil, a sheet, or a plate; and Two layers, including a porous metal medium with three-dimensional open pores; wherein the first layer is permanently bonded to the porous metal medium, thereby closing the porous metal at the side where the first layer is positioned The pores of the medium; wherein the second layer includes a contact layer for being bonded on the wafer, wherein the contact layer includes a mixture of metal fibers and metal powders, wherein the metal fibers and the metal powders are mutually Permanently engages at its point of contact. 如申請專利範圍第1項之載具,其中,該第一層包括金屬、玻璃、矽或陶瓷。For example, the first scope of the patent application scope, wherein the first layer includes metal, glass, silicon or ceramic. 如申請專利範圍第1項之載具,其中,該第一層包括金屬;且其中,該第一層係由與該多孔性金屬介質相同的金屬或合金所提供。For example, the vehicle of claim 1, wherein the first layer includes a metal; and wherein the first layer is provided by the same metal or alloy as the porous metal medium. 如申請專利範圍第1項之載具,其中,該多孔性金屬介質包括不銹鋼、鈦、鈀或鎢;或包括合金,該合金包括高於50%重量百分比之鈦、鈀或鎢。For example, the carrier according to the scope of patent application, wherein the porous metal medium includes stainless steel, titanium, palladium or tungsten; or an alloy including more than 50% by weight of titanium, palladium or tungsten. 如申請專利範圍第1項之載具,其中,該第一層包括金屬;且其中,該第一層係藉由金屬鍵而被永久接合至該多孔性金屬介質。For example, the vehicle of claim 1, wherein the first layer includes a metal; and wherein the first layer is permanently bonded to the porous metal medium by a metal bond. 如申請專利範圍第1項之載具,其中,該第一層係藉由黏著劑而被永久接合至該多孔性金屬介質。For example, the vehicle according to the scope of patent application, wherein the first layer is permanently bonded to the porous metal medium by an adhesive. 如申請專利範圍第1項之載具,其中,該多孔性金屬介質之多孔率係介於20與80%之間。For example, the carrier of the scope of application for patent No. 1 wherein the porosity of the porous metal medium is between 20 and 80%. 如申請專利範圍第1項之載具,其中,該接觸層之多孔率係高於20%。For example, the carrier of the scope of patent application No. 1 wherein the porosity of the contact layer is higher than 20%. 如申請專利範圍第1項之載具,其中,在該接觸層中之該金屬纖維的相當直徑係介於2與50微米之間。For example, the vehicle according to the scope of patent application, wherein the equivalent diameter of the metal fiber in the contact layer is between 2 and 50 microns. 如申請專利範圍第1項之載具,其中,在該接觸層中之該金屬粉末具有在2至10微米之範圍內的直徑。For example, the carrier according to the scope of the patent application, wherein the metal powder in the contact layer has a diameter in a range of 2 to 10 microns. 如申請專利範圍第1項之載具,其中,該多孔性金屬介質具有用於被接合在晶圓上之表面,其中,該表面係平行於該第一層;且其中該表面係經拋光而使得該載具具有小於10微米之總厚度差異(TTV)。For example, the carrier of claim 1, wherein the porous metal medium has a surface for being bonded on a wafer, wherein the surface is parallel to the first layer; and wherein the surface is polished and This allows the carrier to have a total thickness difference (TTV) of less than 10 microns. 如申請專利範圍第1項之載具,其中,該多孔性金屬介質包括第一多孔性層及第二多孔性層,其中,該第一多孔性層係被設置於該第一層與該第二多孔性層之間;且其中,該第一多孔性層之多孔率係高於該第二多孔性層之多孔率。For example, the vehicle according to item 1 of the patent application scope, wherein the porous metal medium includes a first porous layer and a second porous layer, and the first porous layer is disposed on the first layer. And the second porous layer; and wherein the porosity of the first porous layer is higher than the porosity of the second porous layer. 如申請專利範圍第1項之載具,其中,該多孔性金屬介質之側邊邊緣被永久密封而使得沒有開放細孔存在於該多孔性金屬介質之該側邊邊緣處。For example, the vehicle in the scope of application for patent No. 1 wherein the side edge of the porous metal medium is permanently sealed so that no open pores exist at the side edge of the porous metal medium. 一種晶圓與如申請專利範圍第1至13項中任一項之載具的總成,其中,該晶圓係藉由黏著劑而被接合在該接觸層上。An assembly of a wafer and a carrier according to any one of claims 1 to 13, wherein the wafer is bonded to the contact layer by an adhesive. 一種用於處理晶圓之方法,其包括以下之步驟:藉由黏著劑而將晶圓暫時黏附至如申請專利範圍第1至13項中任一項之載具;處理暫時黏附至該載具之該晶圓;藉由破壞在該晶圓與該載具之間之暫時黏著劑接合的剝離液體而將該晶圓從該載具剝離;其中,該剝離液體從藉由黏著劑被接合至該載具之該晶圓之總成的側邊邊緣滲透至該多孔性金屬介質中。A method for processing a wafer, which includes the following steps: temporarily attaching the wafer to a carrier as in any of claims 1 to 13 by applying an adhesive; and processing temporarily adhering to the carrier The wafer; peeling the wafer from the carrier by destroying a peeling liquid temporarily bonding the adhesive between the wafer and the carrier; wherein the peeling liquid is bonded to the carrier by an adhesive The side edges of the wafer assembly of the carrier penetrate into the porous metal medium.
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