TWI663239B - Temporary bonding film, laminated body, temporary bonding composition, device manufacturing method and kit - Google Patents

Temporary bonding film, laminated body, temporary bonding composition, device manufacturing method and kit Download PDF

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TWI663239B
TWI663239B TW104117085A TW104117085A TWI663239B TW I663239 B TWI663239 B TW I663239B TW 104117085 A TW104117085 A TW 104117085A TW 104117085 A TW104117085 A TW 104117085A TW I663239 B TWI663239 B TW I663239B
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小山一郎
岩井悠
加持義貴
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日商富士軟片股份有限公司
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    • C09J7/40Adhesives in the form of films or foils characterised by release liners
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    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

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Abstract

本發明提供一種暫時接著膜、積層體、暫時接著用組成物、元件製造方法及套組,所述暫時接著膜可於對元件晶圓實施機械處理或化學處理時,穩定地暫時接著元件晶圓,並且可容易地解除對元件晶圓的暫時接著,且耐化學性優異。所述暫時接著膜具有接著區域、及接著區域的表面上的脫模區域,並且接著區域自25℃起以10℃/min升溫時的400℃下的質量減少率為1質量%以下,且對25℃的N-甲基吡咯啶酮的溶解度為1 g/100 g溶劑以下。The invention provides a temporary bonding film, a laminated body, a temporary bonding composition, a component manufacturing method, and a kit. The temporary bonding film can stably temporarily bond a component wafer when mechanically or chemically processing the component wafer. It can easily release the temporary bonding to the element wafer, and has excellent chemical resistance. The temporary adhesive film has a bonding region and a mold release region on the surface of the bonding region, and the mass reduction rate of the bonding region at 400 ° C when the temperature is raised at 10 ° C / min from 25 ° C is 1% by mass or less. The solubility of N-methylpyrrolidone at 25 ° C is 1 g / 100 g or less of solvent.

Description

暫時接著膜、積層體、暫時接著用組成物、元件製造方法及套組Temporary bonding film, laminated body, temporary bonding composition, device manufacturing method and kit

本發明是有關於一種暫時接著膜、積層體、暫時接著用組成物、元件製造方法及套組。更詳細而言,本發明是有關於一種可較佳地用於半導體裝置等各種元件的製造等的暫時接著膜、積層體、暫時接著用組成物、元件製造方法及套組。 The present invention relates to a temporary bonding film, a laminated body, a temporary bonding composition, a method for manufacturing a device, and a kit. More specifically, the present invention relates to a temporary bonding film, a laminated body, a temporary bonding composition, a method for manufacturing a device, and a kit which can be preferably used for manufacturing various devices such as semiconductor devices.

於積體電路(Integrated Circuit,IC)或大規模積體電路(Large Scale Integration,LSI)等半導體元件的製造製程(process)中,於元件晶圓上形成多個IC晶片,並藉由切割(dicing)而單片化。 In the manufacturing process of a semiconductor device such as an integrated circuit (IC) or a large scale integration (LSI), a plurality of IC chips are formed on the element wafer, and the dicing ( dicing) and singulation.

伴隨著電子設備的進一步的小型化及高性能化的需求(needs),對搭載於電子設備上的IC晶片亦要求進一步的小型化及高積體化,但元件晶圓的面方向上的積體電路的高積體化已接近極限。 With the further miniaturization and high performance needs of electronic equipment, IC chips mounted on electronic equipment are also required to be further miniaturized and highly integrated, but the product in the plane direction of the element wafer The high integration of the body circuit is approaching the limit.

作為自IC晶片內的積體電路向IC晶片的外部端子的電性連接方法,一直以來打線接合(wire bonding)法廣為人知,但為了實現IC晶片的小型化,近年來已知如下方法:於元件晶圓設置貫通孔,將作為外部端子的金屬插塞(plug)以於貫通孔內貫通的方式連接於積體電路(所謂形成矽貫通電極(Through Silicon Via,TSV)的方法)。然而,僅形成矽貫通電極的方法難以充分應對所述近年來的對IC晶片的進一步高積體化的需求。 As a method of electrically connecting an integrated circuit in an IC chip to an external terminal of the IC chip, a wire bonding method has been widely known, but in order to achieve miniaturization of the IC chip, the following method has been known in recent years: A through-hole is provided on the wafer, and a metal plug serving as an external terminal is connected to the integrated circuit so as to penetrate through the through-hole (so-called through silicon through-electrode (Through Silicon) Via, TSV)). However, the method of forming only the through-silicon electrodes is difficult to sufficiently meet the demand for further high integration of IC chips in recent years.

鑒於以上情況,已知如下技術:使IC晶片內的積體電路多層化,由此提高元件晶圓的每單位面積的積體度。然而,積體電路的多層化會使IC晶片的厚度增大,故必須實現構成IC晶片的構件的薄型化。關於此種構件的薄型化,例如已研究了元件晶圓的薄型化,此方法不僅有助於IC晶片的小型化,而且可使矽貫通電極的製造中的元件晶圓的貫通孔製造步驟省力,故被視為有前途。另外,於功率元件(power device)、影像感測器(image sensor)等半導體元件中,亦就提高所述積體度或提高元件結構的自由度的觀點而言,正在嘗試薄型化。 In view of the above, a technique is known in which the integrated circuit in an IC wafer is multilayered, thereby increasing the integration degree per unit area of an element wafer. However, since the multilayer of the integrated circuit increases the thickness of the IC chip, it is necessary to reduce the thickness of the components constituting the IC chip. Regarding the reduction in thickness of such members, for example, the reduction in thickness of element wafers has been studied. This method not only contributes to miniaturization of IC wafers, but also saves labor in the process of manufacturing through-holes of element wafers in the manufacture of silicon through-electrodes. , So it is considered promising. In addition, in semiconductor devices such as power devices and image sensors, attempts have been made to reduce the thickness from the viewpoint of increasing the integration degree or increasing the degree of freedom of the device structure.

作為元件晶圓,具有約700μm~900μm的厚度者已廣為人知,近年來,以IC晶片的小型化等為目的,正在嘗試使元件晶圓的厚度變薄至200μm以下。 As element wafers, those having a thickness of about 700 μm to 900 μm are widely known. In recent years, attempts have been made to reduce the thickness of element wafers to 200 μm or less for the purpose of miniaturization of IC wafers and the like.

然而,厚度200μm以下的元件晶圓非常薄,以其作為基材的半導體元件製造用構件亦非常薄,故於對此種構件實施進一步的處理、或僅移動此種構件的情形時,難以穩定且無損傷地支撐構件。 However, element wafers with a thickness of 200 μm or less are very thin, and components for manufacturing semiconductor elements using the substrate as substrates are also very thin. Therefore, it is difficult to stabilize such components when further processing is performed or only such components are moved. Support members without damage.

為了解決如上所述的問題,已知如下技術:藉由暫時接著劑將薄型化前的元件晶圓與支撐基板(載體基板)暫且固定(暫時接著),將元件晶圓的背面磨削而薄型化後,使支撐基板自元件晶圓脫離。 In order to solve the problems described above, a technique is known in which a component wafer before thinning and a support substrate (carrier substrate) are temporarily fixed (temporarily adhered) by a temporary adhesive, and the rear surface of the component wafer is ground to be thin. After conversion, the support substrate is detached from the element wafer.

例如,於專利文獻1中揭示有一種半導體裝置的製造方法,包括如下步驟:使含有特定的聚醯亞胺樹脂而成的暫時固定用膜介於支撐構件及元件晶圓之間,將元件晶圓暫時固定於支撐構件上;對暫時固定於支撐構件上的元件晶圓實施既定的加工;使有機溶劑與暫時固定用膜接觸而將暫時固定用膜的一部分或全部溶解,將經加工的元件晶圓自支撐構件分離;以及將經加工的元件晶圓單片化。 For example, Patent Document 1 discloses a method for manufacturing a semiconductor device, which includes a step of interposing a film for temporary fixation containing a specific polyimide resin between a support member and an element wafer, and interposing the element crystal. The circle is temporarily fixed on the supporting member; the element wafer temporarily fixed on the supporting member is subjected to predetermined processing; the organic solvent is brought into contact with the temporarily fixing film to dissolve a part or all of the temporarily fixing film, and the processed component is dissolved. The wafer is separated from the supporting member; and the processed element wafer is singulated.

另一方面,於專利文獻2中揭示有一種與將半導體元件彼此接著、或將半導體元件與支撐基板接著的半導體元件固定用接著劑(黏晶(die bonding)用接著劑)有關的發明。作為該接著劑,已揭示有將如下接著劑組成物成形為片狀而成者,所述接著劑組成物含有:(A)熱塑性樹脂,含有(A1)玻璃轉移溫度為60℃以下且重量平均分子量為10000~100000的聚醯亞胺樹脂、及(A2)以樹脂成分成為20質量%的方式溶解於N-甲基-2-吡咯啶酮中時的25℃下的黏度為10泊(poise)以上的非聚醯亞胺樹脂;以及(B)熱硬化性成分,含有(B1)環氧樹脂及(B2)雙馬來醯亞胺樹脂。 On the other hand, Patent Document 2 discloses an invention related to a semiconductor element fixing adhesive (adhesive for die bonding) for bonding semiconductor elements to each other or a semiconductor element to a support substrate. As this adhesive, it has been disclosed that the following adhesive composition is formed into a sheet shape, the adhesive composition containing: (A) a thermoplastic resin containing (A1) a glass transition temperature of 60 ° C. or lower and a weight average A polyimide resin having a molecular weight of 10,000 to 100,000 and (A2) were dissolved in N-methyl-2-pyrrolidone so that the resin content became 20% by mass. The viscosity at 25 ° C was 10 poise. ) The above non-polyimide resin; and (B) a thermosetting component, containing (B1) an epoxy resin and (B2) a bismaleimide resin.

[現有技術文獻] [Prior Art Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2014-29999號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2014-29999

[專利文獻2]日本專利特開2012-241134號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2012-241134

於將元件晶圓的表面與支撐基板暫時接著的情形時,為了穩定地支撐元件晶圓,對元件晶圓的表面與支撐基板之間的暫時接著膜要求一定強度的接著力,並且要求可容易地解除元件晶圓與支撐基板的暫時接著狀態的特性。 In the case of temporarily bonding the surface of the element wafer to the support substrate, in order to stably support the element wafer, a temporary bonding film between the surface of the element wafer and the support substrate is required to have a strong bonding force, and it is required to be easy. The characteristics of the temporary bonding state of the element wafer and the support substrate are released in a grounded manner.

於專利文獻1中,藉由使用可溶於有機溶劑中的暫時固定用膜,且使有機溶劑與暫時固定用膜接觸,而解除對元件晶圓的暫時支撐。然而,根據本發明者等人的研究得知,專利文獻1中揭示的暫時固定用膜的耐化學性差。 In Patent Document 1, the temporary support for the element wafer is released by using a film for temporary fixation that is soluble in an organic solvent and bringing the organic solvent into contact with the film for temporary fixation. However, according to research by the inventors, the chemical resistance of the film for temporary fixing disclosed in Patent Document 1 is poor.

於元件的製造製程中,有時使用各種化學品。例如於藉由濕式製程使元件晶圓薄膜化的情形時,使用蝕刻液。因此,於元件的製造製程中,要求對有時暴露於各種化學品的暫時接著膜提高耐化學性。 In the manufacturing process of components, various chemicals are sometimes used. For example, when a thin film of an element wafer is formed by a wet process, an etchant is used. Therefore, in the manufacturing process of a device, it is required to improve chemical resistance to a temporary adhesive film which is sometimes exposed to various chemicals.

另外,於元件的製造製程中,近年來有時將元件供於更高溫度下的處理。因此,為了應對各種製造製程,對暫時接著膜亦要求進一步提高耐熱性。 In addition, in the manufacturing process of the element, in recent years, the element is sometimes subjected to processing at a higher temperature. Therefore, in order to cope with various manufacturing processes, it is required to further improve the heat resistance of the temporary adhesive film.

再者,專利文獻2中揭示的發明是一種與用於將半導體元件彼此接著、或將半導體元件與支撐基板接著的半導體元件固定用接著劑有關的發明,且並非將元件晶圓與支撐基板暫時接著。因此,專利文獻2的半導體元件固定用接著劑不具備可解除元件晶圓與支撐基板的暫時接著的特性。 Furthermore, the invention disclosed in Patent Document 2 is an invention related to a semiconductor element fixing adhesive for bonding semiconductor elements to each other or a semiconductor element and a support substrate, and does not temporarily suspend the element wafer and the support substrate. then. Therefore, the adhesive for fixing a semiconductor element of Patent Document 2 does not have a characteristic that the temporary bonding of the element wafer and the support substrate can be released.

本發明是鑒於所述背景而成者,其目的在於提供一種暫 時接著膜、積層體、暫時接著用組成物、元件製造方法及套組,所述暫時接著膜可於對元件晶圓實施機械處理或化學處理時,穩定地暫時接著元件晶圓,並且可容易地解除對元件晶圓的暫時接著,且耐化學性優異。 The present invention has been made in view of the background, and an object thereof is to provide a temporary The film, the laminate, the temporary bonding composition, the device manufacturing method, and the kit can be used to stably temporarily bond the device wafer when the device wafer is mechanically or chemically treated, and can be easily adhered. The device temporarily releases temporary bonding to the element wafer and has excellent chemical resistance.

本發明者等人為了解決所述課題而進行了潛心研究,結果發現,具有接著區域、及接著區域的表面上的脫模區域的暫時接著膜可穩定地暫時接著元件晶圓,並且可容易地解除對元件晶圓的暫時接著,且耐化學性優異,根據該些發現而完成了本發明,所述接著區域自25℃起以10℃/min升溫時的400℃下的質量減少率為1質量%以下,且對25℃的N-甲基吡咯啶酮的溶解度為1g/100g溶劑(Solvent)以下。本發明提供以下內容。 The present inventors conducted intensive studies in order to solve the above problems, and as a result, found that the temporary bonding film having the bonding region and the release region on the surface of the bonding region can stably temporarily bond the element wafer, and can easily bond the element wafer. The temporary bonding of the element wafer was released, and the chemical resistance was excellent. Based on these findings, the present invention has been completed, and the bonding region has a mass reduction rate of 400 ° C at a temperature of 10 ° C / min from 25 ° C to 1 Mass% or less, and solubility in N-methylpyrrolidone at 25 ° C is 1 g / 100 g or less of solvent (Solvent). The present invention provides the following.

<1>一種暫時接著膜,具有接著區域、及接著區域的表面上的脫模區域,並且接著區域自25℃起以10℃/min升溫時的400℃下的質量減少率為1質量%以下,且對25℃的N-甲基吡咯啶酮的溶解度為1g/100g溶劑(Solvent)以下。 <1> A temporary bonding film having a bonding region and a mold release region on the surface of the bonding region, and the mass reduction rate at 400 ° C when the bonding region is heated at a temperature of 10 ° C / min from 25 ° C is 1% by mass or less. The solubility in N-methylpyrrolidone at 25 ° C is 1 g / 100 g or less of solvent (Solvent).

<2>如<1>所述的暫時接著膜,其中接著區域包括含有雜環的樹脂及馬來醯亞胺樹脂,其中所述含雜環的樹脂包含選自聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚苯并咪唑樹脂及聚苯并噁唑樹脂中的至少一種。 <2> The temporary adhesive film according to <1>, wherein the adhesive region includes a resin containing a heterocyclic ring and a maleimide resin, wherein the resin containing a heterocyclic ring is selected from the group consisting of polyimide resin and polyfluorene At least one of an amine imine resin, a polybenzimidazole resin, and a polybenzoxazole resin.

<3>如<2>所述的暫時接著膜,其中含雜環的樹脂為對選自γ-丁內酯、環戊酮、N-甲基吡咯啶酮、環己酮、二醇醚、二甲 基亞碸及四甲基脲中的至少一種溶劑的25℃下的溶解度為10g/100g溶劑(Solvent)以上的聚醯亞胺樹脂。 <3> The temporary adhesive film according to <2>, wherein the heterocyclic-containing resin is a pair selected from γ-butyrolactone, cyclopentanone, N-methylpyrrolidone, cyclohexanone, glycol ether, Second Polyimide resin having a solubility at least at least one of a solvent of methylimide and tetramethylurea at 25 ° C. of 10 g / 100 g of a solvent (Solvent).

<4>如<2>或<3>所述的暫時接著膜,其中馬來醯亞胺樹脂為雙馬來醯亞胺樹脂。 <4> The temporary adhesive film according to <2> or <3>, wherein the maleimide resin is a bismaleimide resin.

<5>如<1>至<4>中任一項所述的暫時接著膜,其中接著區域所含的交聯成分的50質量%~100質量%為馬來醯亞胺樹脂。 <5> The temporary adhesive film according to any one of <1> to <4>, wherein 50% to 100% by mass of the crosslinking component contained in the adhesive region is a maleimide resin.

<6>如<1>至<5>中任一項所述的暫時接著膜,其中接著區域更含有熱聚合起始劑。 <6> The temporary adhesive film according to any one of <1> to <5>, wherein the adhesive region further contains a thermal polymerization initiator.

<7>如<6>所述的暫時接著膜,其中熱聚合起始劑的一分鐘半衰期溫度為130℃~300℃。 <7> The temporary adhesive film according to <6>, wherein the one-minute half-life temperature of the thermal polymerization initiator is 130 ° C to 300 ° C.

<8>如<6>或<7>所述的暫時接著膜,其中熱聚合起始劑為有機過氧化物。 <8> The temporary adhesive film according to <6> or <7>, wherein the thermal polymerization initiator is an organic peroxide.

<9>如<1>至<8>中任一項所述的暫時接著膜,其中脫模區域包括含有選自氟原子及矽原子中的至少一種的化合物。 <9> The temporary adhesive film according to any one of <1> to <8>, wherein the release region includes a compound containing at least one selected from a fluorine atom and a silicon atom.

<10>如<1>至<9>中任一項所述的暫時接著膜,其中脫模區域含有氟系矽烷偶合劑。 <10> The temporary adhesive film according to any one of <1> to <9>, wherein the release region contains a fluorine-based silane coupling agent.

<11>一種積層體,其於如<1>至<10>中任一項所述的暫時接著膜的脫模區域側的表面具有元件晶圓。 <11> A laminated body having an element wafer on a surface on the side of a release region of a temporary adhesive film according to any one of <1> to <10>.

<12>一種暫時接著用組成物,包括含有雜環的樹脂、交聯成分及溶劑,且交聯成分的50質量%~100質量%為馬來醯亞胺樹脂,其中所述含雜環的樹脂包含選自聚醯亞胺樹脂、聚醯胺醯亞 胺樹脂、聚苯并咪唑樹脂及聚苯并噁唑樹脂中的至少一種。 <12> A composition for temporary adhesion, including a heterocyclic-containing resin, a cross-linking component, and a solvent, and 50% to 100% by mass of the cross-linking component is a maleimide resin, wherein the heterocyclic-containing Resin contains polyimide resin, polyimide resin At least one of an amine resin, a polybenzimidazole resin, and a polybenzoxazole resin.

<13>如<12>所述的暫時接著用組成物,其中含雜環的樹脂為對選自γ-丁內酯、環戊酮、N-甲基吡咯啶酮、環己酮、二醇醚、二甲基亞碸及四甲基脲中的至少一種溶劑的25℃下的溶解度為10g/100g溶劑(Solvent)以上的聚醯亞胺樹脂。 <13> The composition for temporary bonding according to <12>, wherein the heterocyclic-containing resin is a compound selected from γ-butyrolactone, cyclopentanone, N-methylpyrrolidone, cyclohexanone, and diol. Polyimide resin having a solubility at 25 ° C. of at least one of ether, dimethylimide, and tetramethylurea at 10 ° C./100 g of a solvent (Solvent).

<14>如<12>或<13>所述的暫時接著用組成物,其中馬來醯亞胺樹脂為雙馬來醯亞胺樹脂。 <14> The temporary bonding composition according to <12> or <13>, wherein the maleimide resin is a bismaleimide resin.

<15>如<12>至<14>中任一項所述的暫時接著用組成物,更含有熱聚合起始劑。 <15> The temporary bonding composition according to any one of <12> to <14>, further containing a thermal polymerization initiator.

<16>如<15>所述的暫時接著用組成物,其中熱聚合起始劑的一分鐘半衰期溫度為130℃~300℃。 <16> The composition for temporary bonding according to <15>, wherein the one-minute half-life temperature of the thermal polymerization initiator is 130 ° C to 300 ° C.

<17>如<16>所述的暫時接著用組成物,其中熱聚合起始劑為有機過氧化物。 <17> The temporary bonding composition according to <16>, wherein the thermal polymerization initiator is an organic peroxide.

<18>如<12>至<17>中任一項所述的暫時接著用組成物,更含有脫模成分。 <18> The temporary bonding composition according to any one of <12> to <17>, further containing a mold release component.

<19>如<18>所述的暫時接著用組成物,其中脫模成分包括含有選自氟原子及矽原子中的至少一種的化合物。 <19> The composition for temporary bonding according to <18>, wherein the release component includes a compound containing at least one selected from a fluorine atom and a silicon atom.

<20>如<18>或<19>所述的暫時接著用組成物,其中脫模成分為氟系矽烷偶合劑。 <20> The temporary bonding composition according to <18> or <19>, wherein the mold release component is a fluorine-based silane coupling agent.

<21>一種元件製造方法,包括塗佈如<12>至<20>中任一項所述的暫時接著用組成物的步驟。 <21> A method for producing a device, comprising the step of applying the temporary bonding composition according to any one of <12> to <20>.

<22>一種套組,其為用以形成如<1>至<10>中任一項 所述的暫時接著膜的套組,並且含有如<12>至<20>中任一項所述的暫時接著用組成物、與含有脫模成分及溶劑的脫模區域形成用組成物。 <22> A set for forming any one of <1> to <10> The set of temporary adhesive films includes the temporary adhesive composition according to any one of <12> to <20>, and a composition for forming a mold release region containing a mold release component and a solvent.

根據本發明,可提供一種暫時接著膜,所述暫時接著膜可於對元件晶圓實施機械處理或化學處理時,穩定地暫時接著元件晶圓,並且可容易地解除對元件晶圓的暫時接著,且耐化學性優異。另外,本發明可提供一種積層體、暫時接著用組成物、元件製造方法及套組。 According to the present invention, it is possible to provide a temporary bonding film which can stably and temporarily bond the element wafer when the element wafer is mechanically or chemically treated, and can easily release the temporary bonding of the element wafer. , And excellent chemical resistance. In addition, the present invention can provide a laminated body, a temporary bonding composition, a device manufacturing method, and a kit.

11‧‧‧接著區域 11‧‧‧ followed by area

12‧‧‧支撐基板 12‧‧‧ support substrate

60‧‧‧元件晶圓 60‧‧‧component wafer

60a‧‧‧薄型元件晶圓 60a‧‧‧ thin component wafer

61‧‧‧矽基板 61‧‧‧ silicon substrate

61a‧‧‧矽基板的表面 61a‧‧‧Surface of silicon substrate

61b‧‧‧矽基板的背面 61b‧‧‧ Back of silicon substrate

61c‧‧‧薄型元件晶圓的背面 Back of 61c‧‧‧ thin component wafer

62‧‧‧元件晶片、結構 62‧‧‧Element wafer, structure

71‧‧‧脫模區域 71‧‧‧ demolding area

80‧‧‧暫時接著膜 80‧‧‧ temporarily adhere to the film

100‧‧‧接著性支撐體 100‧‧‧ Adhesive support

圖1的(A)、圖1的(B)及圖1的(C)分別為對支撐基板與元件晶圓的暫時接著加以說明的概略剖面圖、表示藉由支撐基板而暫時接著的元件晶圓的概略剖面圖、及表示使藉由支撐基板而暫時接著的元件晶圓薄型化的狀態的概略剖面圖。 FIG. 1 (A), FIG. 1 (B), and FIG. 1 (C) are schematic cross-sectional views explaining a temporary and subsequent explanation of a support substrate and an element wafer, respectively, and showing element crystals temporarily adhered by the support substrate. A circle schematic cross-sectional view and a schematic cross-sectional view showing a state where the element wafer temporarily attached by the support substrate is thinned.

以下,對本發明的實施形態加以詳細說明。 Hereinafter, embodiments of the present invention will be described in detail.

於本說明書中的基團(原子團)的表述中,未記載經取代及未經取代的表述包含不具有取代基的基團,亦包含具有取代基的基團。例如所謂「烷基」,不僅包含不具有取代基的烷基(未經取代的烷基),亦包含具有取代基的烷基(經取代的烷基)。 In the description of the group (atomic group) in the present specification, the descriptions that are not substituted and unsubstituted include groups that do not have a substituent and also include groups that have a substituent. For example, "alkyl" includes not only an alkyl group (unsubstituted alkyl group) having no substituent, but also an alkyl group (substituted alkyl group) having a substituent.

本說明書中的「光化射線」或「放射線」例如是指包含可見 光線、紫外線、遠紫外線、電子束、X射線等。 "Actinic rays" or "radiation" in this specification means Light, ultraviolet, far ultraviolet, electron beam, X-ray, etc.

本說明書中,所謂「光」是指光化射線或放射線。 In this specification, "light" means actinic radiation or radiation.

本說明書中,所謂「曝光」,只要無特別說明,則不僅是指利用水銀燈、紫外線、準分子雷射所代表的遠紫外線、X射線、遠紫外線(Extreme Ultraviolet,EUV)光等的曝光,亦是指利用電子束及離子束(ion beam)等粒子束的描畫。 In this specification, the term "exposure" means not only exposure using mercury lamp, ultraviolet light, far-ultraviolet light represented by excimer laser, X-ray, extreme ultraviolet (EUV) light, etc., but also It refers to drawing using particle beams such as electron beams and ion beams.

本說明書中,「(甲基)丙烯酸酯」表示丙烯酸酯及甲基丙烯酸酯,「(甲基)丙烯酸基」表示丙烯酸基及甲基丙烯酸基,「(甲基)丙烯醯基」表示「丙烯醯基」及「甲基丙烯醯基」。 In this specification, "(meth) acrylate" means acrylate and methacrylate, "(meth) acrylate" means acrylic and methacrylate, and "(meth) acryl" refers to "propylene "Methyl" and "methacryl".

本說明書中,重量平均分子量及數量平均分子量是定義為由凝膠滲透層析(Gel Permeation Chromatography,GPC)測定所得的聚苯乙烯換算值。本說明書中,重量平均分子量(Mw)及數量平均分子量(Mn)例如可藉由以下方式求出:使用HLC-8220(東曹(Tosoh)(股)製造),使用TSKgel Super AWM-H(東曹(股)製造,6.0mm ID×15.0cm)作為管柱,且使用10mmol/L的溴化鋰N-甲基吡咯啶酮(N-methyl pyrrolidinone,NMP)溶液作為溶離液。 In this specification, weight average molecular weight and number average molecular weight are defined as polystyrene conversion values measured by gel permeation chromatography (GPC). In this specification, the weight average molecular weight (Mw) and the number average molecular weight (Mn) can be obtained, for example, by using HLC-8220 (manufactured by Tosoh Corporation) and using TSKgel Super AWM-H (East Manufactured by Cao Co., Ltd. (6.0 mm ID × 15.0 cm) as a column, and a 10 mmol / L lithium bromide N-methyl pyrrolidinone (NMP) solution was used as the eluent.

本說明書中,「單量體」與「單體(monomer)」為相同含意。本發明中的單量體是指與寡聚物及聚合物相區分、重量平均分子量為2,000以下的化合物。 In this specification, "monomer" and "monomer" have the same meaning. The haploid in the present invention refers to a compound that is distinguished from oligomers and polymers and has a weight average molecular weight of 2,000 or less.

本發明中所謂高分子化合物,是指重量平均分子量超過2000的化合物。 The polymer compound in the present invention refers to a compound having a weight average molecular weight exceeding 2,000.

再者,於以下所說明的實施形態中,關於已於參照圖式中說明的構件等,藉由在圖中標註相同符號或相應符號而將說明簡化或省略。 In the embodiments described below, descriptions of components and the like already described with reference to the drawings are simplified or omitted by using the same or corresponding symbols in the drawings.

<暫時接著膜> <Temporarily adhere film>

本發明的暫時接著膜具有接著區域、及接著區域的表面上的脫模區域,並且接著區域自25℃起以10℃/min升溫時的400℃下的質量減少率為1質量%以下,且對25℃的N-甲基吡咯啶酮的溶解度為1g/100g溶劑(Solvent)以下。 The temporary adhesive film of the present invention has a bonding region and a mold release region on the surface of the bonding region, and the mass reduction rate of the bonding region at 400 ° C at a temperature increase of 10 ° C / min from 25 ° C is 1% by mass or less, and The solubility in N-methylpyrrolidone at 25 ° C is 1 g / 100 g or less of solvent (Solvent).

本發明的暫時接著膜於接著區域的表面上具有脫模區域,故藉由使元件晶圓積層於暫時接著膜的脫模區域的表面上,並且於暫時接著膜的與元件晶圓的積層面為相反側的面上配置支撐基板,可適當地保護具有凸塊(bump)等結構的元件晶圓,並且利用機械剝離等方法可將暫時接著膜自對元件晶圓實施機械處理或化學處理後的元件晶圓簡單地剝離。 The temporary bonding film of the present invention has a release region on the surface of the bonding region. Therefore, the element wafer is laminated on the surface of the release region of the temporary bonding film, and the layer of the temporary bonding film and the element wafer is laminated. A support substrate is arranged on the opposite surface, which can appropriately protect element wafers with structures such as bumps. After mechanically or chemically treating the element wafer by mechanical peeling or other methods, the element wafer can be temporarily adhered to the wafer. The component wafer is simply stripped.

另外,接著區域由於自25℃起以10℃/min升溫時的400℃下的質量減少率為1質量%以下,故耐熱性優異,即便於經過高溫下的製程的情形時,亦可穩定地暫時接著元件晶圓。進而,暫時接著膜不易熱劣化,故即便於經過高溫製程後,亦可利用機械剝離等方法將暫時接著膜自元件晶圓簡單地剝離。 In addition, since the mass reduction rate at 400 ° C at a temperature increase of 10 ° C / min from 25 ° C in the bonding region is 1% by mass or less, it has excellent heat resistance and can be stable even when subjected to a process at a high temperature. The component wafer is temporarily attached. Furthermore, the temporary bonding film is not easily thermally deteriorated, so even after a high-temperature process, the temporary bonding film can be easily peeled from the element wafer by a method such as mechanical peeling.

而且,本發明中的元件晶圓與支撐基板的剝離可藉由機械剝離來進行,故可使接著區域的對25℃的N-甲基吡咯啶酮的溶解度為1g/100g溶劑(Solvent)以下,耐化學性優異。因此,例如於 元件晶圓的處理時,即便蝕刻液等化學品附著於暫時接著膜,亦可穩定地暫時接著元件晶圓。 In addition, since the peeling of the element wafer and the support substrate in the present invention can be performed by mechanical peeling, the solubility of N-methylpyrrolidone at 25 ° C. in the bonding region can be 1 g / 100 g or less of solvent (Solvent). , Excellent chemical resistance. So, for example, in During the processing of the element wafer, even if chemicals such as an etchant adhere to the temporary adhesion film, the element wafer can be stably temporarily adhered.

如此,本發明的暫時接著膜即便於對元件晶圓進行高溫處理或化學品處理等各種處理的情形時,亦可穩定地暫時接著,並且可自處理後的元件晶圓容易地剝離。 As described above, even when the temporary bonding film of the present invention is subjected to various processes such as high-temperature processing and chemical processing on the element wafer, the temporary bonding film can be stably temporarily bonded, and the element wafer can be easily peeled from the processed element wafer.

再者,本發明中,質量減少率為藉由熱重分析裝置(Thermogravimetric Analyzer,TGA)於氮氣流下於所述升溫條件下測定的值。 In the present invention, the mass reduction rate is a value measured by a thermogravimetric analyzer (TGA) under a nitrogen flow under the temperature rising condition.

另外,本發明中,關於溶解度,一面攪拌試樣一面對100g溶劑添加一定量,確認溶解性,於完全溶解的情形時,進一步將試樣於攪拌下添加一定量,重複所述操作,將最終於25℃下經1小時攪拌時試樣即將不溶解之前的量作為溶解度。 In addition, in the present invention, regarding the solubility, a certain amount is added to 100 g of the solvent while stirring the sample, and the solubility is confirmed. When the sample is completely dissolved, the sample is further added with a certain amount under stirring, and the operation is repeated to The final amount of the sample immediately before dissolution when stirred at 25 ° C for 1 hour was taken as the solubility.

本發明的暫時接著膜具有接著區域、及接著區域的表面上的脫模區域。 The temporary adhesive film of the present invention has a bonding region and a release region on the surface of the bonding region.

本發明的暫時接著膜中,接著區域的自25℃起以10℃/min升溫時的400℃下的質量減少率為1質量%以下,較佳為0.90質量%以下,更佳為0.8質量%以下,進而佳為0.7質量%以下,尤佳為0.6質量%以下,最佳為0.5質量%以下。若為該範圍,即便於經過高達400℃的高溫製程的情形時,亦可穩定地暫時接著元件晶圓。另外,暫時接著膜不易熱劣化,故即便於經過高溫製程後,亦可利用機械剝離等方法將暫時接著膜自元件晶圓簡單地剝離。 In the temporary adhesive film of the present invention, the mass reduction rate at 400 ° C at a temperature increase of 10 ° C / min from 25 ° C is 1 mass% or less, preferably 0.90 mass% or less, and more preferably 0.8 mass%. Hereinafter, it is more preferably 0.7% by mass or less, particularly preferably 0.6% by mass or less, and most preferably 0.5% by mass or less. Within this range, even in the case of a high-temperature process up to 400 ° C., the element wafer can be temporarily adhered stably. In addition, the temporary bonding film is not easily thermally deteriorated, so even after a high-temperature process, the temporary bonding film can be easily peeled from the element wafer by a method such as mechanical peeling.

本發明的暫時接著膜中,接著區域的對25℃的N-甲基吡咯啶 酮的溶解度為1g/100g溶劑(Solvent)以下,較佳為0.8g/100g溶劑(Solvent)以下,更佳為0.5g/100g溶劑(Solvent)以下,進而佳為0.1g/100g溶劑(Solvent)以下。根據該態樣,即便於元件的製造製程中所用的化學液接觸暫時接著膜的情形時,亦可穩定地暫時接著元件晶圓。 In the temporary bonding film of the present invention, the N-methylpyrrolidine at 25 ° C in the bonding region The solubility of the ketone is 1 g / 100 g or less of Solvent, preferably 0.8 g / 100 g or less of Solvent, more preferably 0.5 g / 100 g or less of Solvent, and even more preferably 0.1 g / 100 g of Solvent. the following. According to this aspect, even in the case where the chemical liquid used in the manufacturing process of the element comes into contact with the temporarily adhered film, the element wafer can be stably temporarily adhered.

本發明的暫時接著膜中,接著區域與脫模區域可分別以獨立的接著層、脫模層的形式而存在,接著區域與脫模區域的邊界亦可不明確。接著區域與脫模區域的邊界不明確的態樣的一例可列舉:於暫時接著層中,脫模成分偏向存在於表層而形成脫模區域的態樣。另外,接著區域亦可包含兩種以上的接著層,脫模區域亦可包含兩層以上的脫模層。 In the temporary adhesive film of the present invention, the adhesive region and the mold release region may exist as separate adhesive layers and mold release layers, and the boundary between the adhesive region and the mold release region may not be clear. An example of an aspect in which the boundary between the subsequent region and the demolding region is unclear may include an aspect in which the demolding component is biased to exist in the surface layer to form a demolding region in the temporary adhesion layer. In addition, the bonding region may include two or more bonding layers, and the mold release region may include two or more bonding layers.

以下,對本發明的暫時接著膜加以具體說明。 Hereinafter, the temporary adhesive film of this invention is demonstrated concretely.

<<接著區域>> << Next area >>

本發明的暫時接著膜具有接著區域。接著區域將元件晶圓與支撐基板接著。 The temporary bonding film of the present invention has a bonding region. The next area attaches the element wafer to the support substrate.

接著區域可使用:自25℃起以10℃/min升溫時的400℃下的質量減少率為1質量%以下、且對25℃的N-甲基吡咯啶酮的溶解度為1g/100g溶劑(Solvent)以下的區域。 The following area can be used: the mass reduction rate at 400 ° C at a temperature increase of 10 ° C / min from 25 ° C is 1% by mass or less, and the solubility to 25 ° C N-methylpyrrolidone is 1g / 100g of solvent ( Solvent).

接著區域的平均厚度較佳為0.1μm~500μm,進而佳為0.5μm~500μm,更佳為0.5μm~50μm,尤佳為0.5μm~10μm。另外,於將本發明的暫時接著膜應用於在表面上具有結構的元件晶圓的情形時,較佳為接著區域的平均厚度較後述元件晶圓的結構 的高度更厚。 The average thickness of the next region is preferably 0.1 μm to 500 μm, more preferably 0.5 μm to 500 μm, more preferably 0.5 μm to 50 μm, and even more preferably 0.5 μm to 10 μm. In addition, when the temporary bonding film of the present invention is applied to a device wafer having a structure on the surface, it is preferable that the average thickness of the bonding region is larger than that of a device wafer described later. The height is thicker.

於本發明的暫時接著膜包含在形成接著區域的層的表層上積層有形成脫模區域的層而構成的積層結構的情形時,形成接著區域的層的平均厚度較佳為1μm~50μm,更佳為2μm~20μm。 In the case where the temporary adhesive film of the present invention includes a laminated structure in which a layer forming a release region is laminated on a surface layer of a layer forming the adhesive region, the average thickness of the layer forming the adhesive region is preferably 1 μm to 50 μm, more It is preferably 2 μm to 20 μm.

於本發明的暫時接著膜為在暫時接著層中脫模成分偏向存在於表層而形成脫模區域的態樣的情形時,接著區域的平均厚度較佳為1μm~50μm,更佳為2μm~20μm。 In the case where the temporary adhesive film of the present invention is in a state where the release component in the temporary adhesive layer is biased to exist on the surface layer to form a release region, the average thickness of the adhesive region is preferably 1 μm to 50 μm, and more preferably 2 μm to 20 μm. .

再者,本發明中,接著區域的平均厚度是定義為藉由橢圓偏光法(ellipsometry)進行5點測定的點的平均值。 In the present invention, the average thickness of the next region is defined as the average of five points measured by ellipsometry.

接著區域只要可達成所述質量減少率及溶解度,則均可較佳地使用,較佳為含有後述樹脂成分A及馬來醯亞胺樹脂。於接著區域含有後述樹脂成分A及馬來醯亞胺樹脂的情形時,可使樹脂成分A介於經三維交聯的馬來醯亞胺樹脂之間,容易獲得耐熱性及耐化學性優異的接著區域。 As long as the mass reduction rate and solubility can be achieved in the next region, they can be preferably used, and preferably contain the resin component A and maleimide resin described later. When the resin component A and the maleimide imine resin described later are contained in the subsequent region, the resin component A can be interposed between the maleimide resins which are three-dimensionally crosslinked, and it is easy to obtain a resin having excellent heat resistance and chemical resistance. Then the area.

<<<樹脂成分A>>> <<< resin composition A >>>

本發明中,接著區域可含有的樹脂成分A只要滿足所述質量減少率及溶解度,則可使用任意的樹脂成分。再者,本發明中,視為樹脂成分A中不包含馬來醯亞胺樹脂。 In the present invention, as long as the resin component A that can be contained in the bonding region satisfies the above-mentioned mass reduction rate and solubility, any resin component can be used. In addition, in the present invention, it is considered that the maleimide resin is not included in the resin component A.

樹脂成分A例如可列舉:含雜環的樹脂(較佳為聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚苯并咪唑樹脂、聚苯并噁唑樹脂)、萜烯樹脂、萜烯苯酚樹脂、改質萜烯樹脂、氫化萜烯樹脂、氫化萜烯苯酚樹脂、松香、松香酯、氫化松香、氫化松香酯、聚合松香、 聚合松香酯、改質松香、松香改質苯酚樹脂、烷基苯酚樹脂、脂肪族石油樹脂、芳香族石油樹脂、氫化石油樹脂、改質石油樹脂、脂環族石油樹脂、熏草酮(coumarone)石油樹脂、茚石油樹脂、烯烴共聚物(例如甲基戊烯共聚物)、環烯烴共聚物(例如降冰片烯共聚物、二環戊二烯共聚物、四環十二烯共聚物)、酚醛清漆樹脂、酚樹脂、環氧樹脂、三聚氰胺樹脂、脲樹脂、不飽和聚酯樹脂、醇酸樹脂、聚胺基甲酸酯樹脂、聚乙烯樹脂、聚丙烯樹脂、乙烯丙烯共聚物(EPDM橡膠)、聚氯乙烯樹脂、聚苯乙烯樹脂、聚苯乙烯共聚合樹脂(例如丙烯腈-丁二烯-苯乙烯共聚物(ABS樹脂)、丙烯腈苯乙烯共聚物(AS樹脂)、甲基丙烯酸甲酯苯乙烯共聚合樹脂(MS樹脂))、聚乙酸乙烯酯樹脂、聚四氟乙烯樹脂(PTFE樹脂)、四氟乙烯與全氟烷氧基乙烯的共聚物(PFA樹脂)、四氟乙烯-六氟丙烯共聚物(FEP樹脂)、乙烯-四氟乙烯(Tetrafluoroethylene,TFE)共聚合樹脂、聚偏二氟乙烯(PVDF樹脂)、聚氯三氟乙烯(PCTFE樹脂)、乙烯-氯三氟乙烯樹脂(CTFE樹脂)、TFE-全氟二甲基二氧雜環戊烯(perfluorodimethyl dioxole)共聚合樹脂、聚氟乙烯基樹脂(PVF樹脂)、丙烯酸系樹脂、纖維素樹脂、聚醯胺樹脂、聚縮醛樹脂、聚碳酸酯樹脂、聚苯醚樹脂、聚對苯二甲酸丁二酯樹脂、聚對苯二甲酸乙二酯樹脂、環狀聚烯烴樹脂、聚苯硫醚樹脂、聚碸樹脂、聚醚碸樹脂、聚芳酯樹脂、聚醚酮樹脂等合成樹脂,或天然橡膠等天然樹脂。 Examples of the resin component A include a heterocyclic-containing resin (polyimide resin, polyimide resin, polybenzimidazole resin, polybenzoxazole resin), terpene resin, and terpene Phenol resin, modified terpene resin, hydrogenated terpene resin, hydrogenated terpene phenol resin, rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized rosin, Polymerized rosin ester, modified rosin, rosin modified phenol resin, alkylphenol resin, aliphatic petroleum resin, aromatic petroleum resin, hydrogenated petroleum resin, modified petroleum resin, alicyclic petroleum resin, coumarone Petroleum resin, indene petroleum resin, olefin copolymer (such as methylpentene copolymer), cycloolefin copolymer (such as norbornene copolymer, dicyclopentadiene copolymer, tetracyclododecene copolymer), phenolic Varnish resin, phenol resin, epoxy resin, melamine resin, urea resin, unsaturated polyester resin, alkyd resin, polyurethane resin, polyethylene resin, polypropylene resin, ethylene propylene copolymer (EPDM rubber) , Polyvinyl chloride resin, polystyrene resin, polystyrene copolymer resin (such as acrylonitrile-butadiene-styrene copolymer (ABS resin), acrylonitrile-styrene copolymer (AS resin), methyl methacrylate Ester styrene copolymer resin (MS resin)), polyvinyl acetate resin, polytetrafluoroethylene resin (PTFE resin), copolymer of tetrafluoroethylene and perfluoroalkoxyethylene (PFA resin), tetrafluoroethylene- Hexafluoropropylene (FEP resin), ethylene-tetrafluoroethylene (TFE) copolymer resin, polyvinylidene fluoride (PVDF resin), polychlorotrifluoroethylene (PCTFE resin), ethylene-chlorotrifluoroethylene resin (CTFE resin ), TFE-perfluorodimethyl dioxole copolymer resin, polyvinyl fluoride resin (PVF resin), acrylic resin, cellulose resin, polyamide resin, polyacetal resin , Polycarbonate resin, polyphenylene ether resin, polybutylene terephthalate resin, polyethylene terephthalate resin, cyclic polyolefin resin, polyphenylene sulfide resin, polyfluorene resin, polyetherfluorene Synthetic resins such as resins, polyarylate resins, and polyetherketone resins, or natural resins such as natural rubber.

其中,較佳為聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚苯并咪 唑樹脂、聚苯并噁唑樹脂、聚碳酸酯樹脂、聚醚碸樹脂、聚酯樹脂,更佳為聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚苯并咪唑樹脂、聚苯并噁唑樹脂,進而佳為聚醯亞胺樹脂或聚醯胺醯亞胺樹脂,尤佳為聚醯亞胺樹脂。該些樹脂由於耐熱性優異,故容易達成所述質量減少率。 Among these, polyimide resins, polyamidoimide resins, and polybenzoimides are preferred. Azole resin, polybenzoxazole resin, polycarbonate resin, polyether resin, polyester resin, more preferably polyimide resin, polyimide resin, polybenzimidazole resin, polybenzo The oxazole resin is further preferably a polyimide resin or a polyimide resin, and particularly preferably a polyimide resin. Since these resins are excellent in heat resistance, it is easy to achieve the aforementioned mass reduction rate.

另外,聚醯亞胺樹脂較佳為對選自γ-丁內酯、環戊酮、N-甲基吡咯啶酮、環己酮、二醇醚、二甲基亞碸及四甲基脲中的至少一種溶劑的25℃下的溶解度為10g/100g溶劑(Solvent)以上的聚醯亞胺樹脂。根據該態樣,可利用塗佈法來形成接著區域。 In addition, the polyfluorene imine resin is preferably selected from the group consisting of γ-butyrolactone, cyclopentanone, N-methylpyrrolidone, cyclohexanone, glycol ethers, dimethylimide, and tetramethylurea. Polyimide resin having a solubility at 25 ° C. of at least one solvent of 10 g / 100 g of a solvent (Solvent) or more. According to this aspect, a bonding region can be formed by a coating method.

<<<<聚醯亞胺樹脂>>>> <<< Polyimide resin >>>>

聚醯亞胺樹脂可使用藉由公知的方法使四羧酸二酐與二胺進行縮合反應所得的聚醯亞胺樹脂。 As the polyimide resin, a polyimide resin obtained by subjecting a tetracarboxylic dianhydride and a diamine to a condensation reaction by a known method can be used.

公知的方法例如可列舉:於有機溶劑中混合大致等莫耳的四羧酸二酐與二胺,於反應溫度80℃以下進行反應而獲得聚醯胺酸,使所得的聚醯胺酸進行脫水閉環的方法等。此處,所謂大致等莫耳,是指四羧酸二酐與二胺的莫耳量比為1:1附近。再者,視需要,四羧酸二酐與二胺的組成比亦能以相對於四羧酸二酐的合計1.0莫耳而二胺的合計成為0.5莫耳~2.0莫耳的方式調整。藉由在所述範圍內調整四羧酸二酐與二胺的組成比,可調整聚醯亞胺樹脂的重量平均分子量。 Known methods include, for example, mixing approximately equimolar tetracarboxylic dianhydride and diamine in an organic solvent, and reacting at a reaction temperature of 80 ° C or lower to obtain a polyamic acid, and dehydrating the obtained polyamino acid. Closed-loop methods, etc. Here, the term "approximately equal molarity" means that the molar ratio of tetracarboxylic dianhydride to diamine is around 1: 1. Furthermore, if necessary, the composition ratio of the tetracarboxylic dianhydride to the diamine can be adjusted so that the total of the tetracarboxylic dianhydride is 1.0 mol and the total of the diamine is 0.5 mol to 2.0 mol. By adjusting the composition ratio of tetracarboxylic dianhydride to diamine within the above range, the weight average molecular weight of the polyfluoreneimide resin can be adjusted.

四羧酸二酐並無特別限定,例如可列舉:均苯四甲酸二酐、3,3',4,4'-聯苯四羧酸二酐、2,2',3,3'-聯苯四羧酸二酐、2,2-雙 (3,4-二羧基苯基)丙烷二酐、2,2-雙(2,3-二羧基苯基)丙烷二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐、1,1-雙(3,4-二羧基苯基)乙烷二酐、雙(2,3-二羧基苯基)甲烷二酐、雙(3,4-二羧基苯基)甲烷二酐、雙(3,4-二羧基苯基)碸二酐、3,4,9,10-苝四羧酸二酐、雙(3,4-二羧基苯基)醚二酐、苯-1,2,3,4-四羧酸二酐、3,4,3',4'-二苯甲酮四羧酸二酐、2,3,2',3'-二苯甲酮四羧酸二酐、2,3,3',4'-二苯甲酮四羧酸二酐、1,2,5,6-萘四羧酸二酐、1,4,5,8-萘四羧酸二酐、2,3,6,7-萘四羧酸二酐、1,2,4,5-萘四羧酸二酐、2,6-二氯萘-1,4,5,8-四羧酸二酐、2,7-二氯萘-1,4,5,8-四羧酸二酐、2,3,6,7-四氯萘-1,4,5,8-四羧酸二酐、菲-1,8,9,10-四羧酸二酐、吡嗪-2,3,5,6-四羧酸二酐、噻吩-2,3,5,6-四羧酸二酐、2,3,3',4'-聯苯四羧酸二酐、3,4,3',4'-聯苯四羧酸二酐、2,3,2',3'-聯苯四羧酸二酐、雙(3,4-二羧基苯基)二甲基矽烷二酐、雙(3,4-二羧基苯基)甲基苯基矽烷二酐、雙(3,4-二羧基苯基)二苯基矽烷二酐、1,4-雙(3,4-二羧基苯基二甲基矽烷基)苯二酐、1,3-雙(3,4-二羧基苯基)-1,1,3,3-四甲基二環己烷二酐、對伸苯基雙(偏苯三酸酐酯)、伸乙基四羧酸二酐、1,2,3,4-丁烷四羧酸二酐、十氫萘-1,4,5,8-四羧酸二酐、4,8-二甲基-1,2,3,5,6,7-六氫萘-1,2,5,6-四羧酸二酐、環戊烷-1,2,3,4-四羧酸二酐、吡咯啶-2,3,4,5-四羧酸二酐、1,2,3,4-環丁烷四羧酸二酐、雙(外-雙環[2,2,1]庚烷-2,3-二羧酸二酐、雙環-[2,2,2]-辛-7-烯-2,3,5,6-四羧酸二酐、2,2-雙(3,4-二羧基苯基)丙烷二酐、2,2-雙[4-(3,4-二羧基苯基)苯基]丙烷二酐、2,2-雙(3,4-二羧基苯基)六氟丙烷二酐、2,2-雙[4-(3,4-二羧基苯基)苯基] 六氟丙烷二酐、4,4'-雙(3,4-二羧基苯氧基)二苯基硫醚二酐、1,4-雙(2-羥基六氟異丙基)苯雙(偏苯三甲酸酐)、1,3-雙(2-羥基六氟異丙基)苯雙(偏苯三甲酸酐)、5-(2,5-二氧代四氫呋喃基)-3-甲基-3-環己烯-1,2-二羧酸二酐、四氫呋喃-2,3,4,5-四羧酸二酐、4,4'-氧基二鄰苯二甲酸二酐、1,2-(伸乙基)雙(偏苯三酸酐酯)、1,3-(三亞甲基)雙(偏苯三酸酐酯)、1,4-(四亞甲基)雙(偏苯三酸酐酯)、1,5-(五亞甲基)雙(偏苯三酸酐酯)、1,6-(六亞甲基)雙(偏苯三酸酐酯)、1,7-(七亞甲基)雙(偏苯三酸酐酯)、1,8-(八亞甲基)雙(偏苯三酸酐酯)、1,9-(九亞甲基)雙(偏苯三酸酐酯)、1,10-(十亞甲基)雙(偏苯三酸酐酯)、1,12-(十二亞甲基)雙(偏苯三酸酐酯)、1,16-(十六亞甲基)雙(偏苯三酸酐酯)、1,18-(十八亞甲基)雙(偏苯三酸酐酯)等,可將該些四羧酸二酐單獨使用一種或組合使用兩種以上。該些四羧酸二酐中,較佳為3,4,3',4'-二苯甲酮四羧酸二酐、2,3,2',3'-二苯甲酮四羧酸二酐、2,3,3',4'-二苯甲酮四羧酸二酐,更佳為3,4,3',4'-二苯甲酮四羧酸二酐。 Tetracarboxylic dianhydride is not particularly limited, and examples thereof include pyromellitic dianhydride, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride, 2,2', 3,3'-bi Pyromellitic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) propane dianhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane Dianhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, bis (2,3-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) methane Dianhydride, bis (3,4-dicarboxyphenyl) fluorene dianhydride, 3,4,9,10-fluorenetetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, benzene- 1,2,3,4-tetracarboxylic dianhydride, 3,4,3 ', 4'-benzophenone tetracarboxylic dianhydride, 2,3,2', 3'-benzophenone tetracarboxylic acid Acid dianhydride, 2,3,3 ', 4'-benzophenonetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic acid Acid dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,2,4,5-naphthalenetetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5,8- Tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic acid Acid dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride, thiophene-2,3,5,6-tetracarboxylic acid Dianhydride, 2,3,3 ', 4'-biphenyltetracarboxylic dianhydride, 3,4,3', 4'-biphenyltetracarboxylic dianhydride, 2,3,2 ', 3'-bi Pyromellitic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride, bis (3,4-dicarboxyl ) Methylphenylsilane dianhydride, bis (3,4-dicarboxyphenyl) diphenylsilane dianhydride, 1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene Anhydride, 1,3-bis (3,4-dicarboxyphenyl) -1,1,3,3-tetramethyldicyclohexane dianhydride, p-phenylene bis (trimellitic anhydride ester), and ethyl tetraethylene Carboxylic dianhydride, 1,2,3,4-butanetetracarboxylic dianhydride, decalin-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2 , 3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2, 3,4,5-tetracarboxylic dianhydride, 1,2,3,4-cyclobutane tetracarboxylic dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-dicarboxylic acid Acid dianhydride, bicyclo- [2,2,2] -oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane Dianhydride, 2,2-bis [4- (3,4-dicarboxyphenyl) phenyl] propane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, 2 , 2-bis [4- (3,4-dicarboxyphenyl) phenyl] Hexafluoropropane dianhydride, 4,4'-bis (3,4-dicarboxyphenoxy) diphenylsulfide dianhydride, 1,4-bis (2-hydroxyhexafluoroisopropyl) benzenebis (partial Trimellitic anhydride), 1,3-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic anhydride), 5- (2,5-dioxotetrahydrofuryl) -3-methyl-3- Cyclohexene-1,2-dicarboxylic dianhydride, tetrahydrofuran-2,3,4,5-tetracarboxylic dianhydride, 4,4'-oxydiphthalic dianhydride, 1,2- ( Ethyl) bis (trimellitic anhydride ester), 1,3- (trimethylene) bis (trimellitic anhydride ester), 1,4- (tetramethylene) bis (trimellitic anhydride ester), 1,5- (pentamethylene ) Bis (trimellitic anhydride ester), 1,6- (hexamethylene) bis (trimellitic anhydride ester), 1,7- (heptamethylene) bis (trimellitic anhydride ester), 1,8- (octamethylene) bis (Trimellitic anhydride ester), 1,9- (ninemethylene) bis (trimellitic anhydride ester), 1,10- (decamethylene) bis (trimellitic anhydride ester), 1,12- (dodecylmethylene) bis ( Trimellitic anhydride ester), 1,16- (hexamethylene) bis (trimellitic anhydride ester), 1,18- (octadecyl methylene) bis (trimellitic anhydride ester), etc. These tetracarboxylic dianhydrides can be used alone One type or a combination of two or more types. Among these tetracarboxylic dianhydrides, 3,4,3 ', 4'-benzophenone tetracarboxylic dianhydride and 2,3,2', 3'-benzophenone tetracarboxylic dianhydride are preferred. Anhydride and 2,3,3 ', 4'-benzophenonetetracarboxylic dianhydride, more preferably 3,4,3', 4'-benzophenonetetracarboxylic dianhydride.

二胺並無特別限制,例如可列舉:鄰苯二胺、間苯二胺、對苯二胺、3,3'-二胺基二苯基醚、3,4'-二胺基二苯基醚、4,4'-二胺基二苯基醚、3,3'-二胺基二苯基甲烷、3,4'-二胺基二苯基甲烷、雙(4-胺基-3,5-二甲基苯基)甲烷、雙(4-胺基-3,5-二異丙基苯基)甲烷、3,3'-二胺基二苯基二氟甲烷、3,4'-二胺基二苯基二氟甲烷、4,4'-二胺基二苯基二氟甲烷、3,3'-二胺基二苯基碸、3,4'-二胺基二苯基碸、4,4'-二胺基二苯基碸、3,3'-二胺基二苯基硫醚、3,4'-二胺基二 苯基硫醚、4,4'-二胺基二苯基硫醚、3,3'-二胺基二苯基酮、3,4'-二胺基二苯基酮、4,4'-二胺基二苯基酮、3-(4-胺基苯基)-1,1,3-三甲基-5-胺基茚滿、2,2-雙(3-胺基苯基)丙烷、2,2'-(3,4'-二胺基二苯基)丙烷、2,2-雙(4-胺基苯基)丙烷、2,2-雙(3-胺基苯基)六氟丙烷、2,2-(3,4'-二胺基二苯基)六氟丙烷、2,2-雙(4-胺基苯基)六氟丙烷、1,3-雙(3-胺基苯氧基)苯、1,4-雙(3-胺基苯氧基)苯、1,4-雙(4-胺基苯氧基)苯、3,3'-(1,4-伸苯基雙(1-甲基亞乙基))雙苯胺、3,4'-(1,4-伸苯基雙(1-甲基亞乙基))雙苯胺、4,4'-(1,4-伸苯基雙(1-甲基亞乙基))雙苯胺、2,2-雙(4-(3-胺基苯氧基)苯基)丙烷、2,2-雙(4-(3-胺基苯氧基)苯基)六氟丙烷、2,2-雙(4-(4-胺基苯氧基)苯基)六氟丙烷、雙(4-(3-胺基乙氧基)苯基)硫醚、雙(4-(4-胺基乙氧基)苯基)硫醚、雙(4-(3-胺基乙氧基)苯基)碸、雙(4-(4-胺基乙氧基)苯基)碸、3,3'-二羥基-4,4'-二胺基聯苯、3,5-二胺基苯甲酸等芳香族二胺,1,3-雙(胺基甲基)環己烷、2,2-雙(4-胺基苯氧基苯基)丙烷、聚氧伸丙基二胺、4,9-二氧雜癸烷-1,12-二胺、4,9,14-三氧雜十七烷-1,17-二胺、1,2-二胺基乙烷、1,3-二胺基丙烷、1,4-二胺基丁烷、1,5-二胺基戊烷、1,6-二胺基己烷、1,7-二胺基庚烷、1,8-二胺基辛烷、1,9-二胺基壬烷、1,10-二胺基癸烷、1,11-二胺基十一烷、1,12-二胺基十二烷、1,2-二胺基環己烷、1,3-雙(3-胺基丙基)四甲基二矽氧烷等。 The diamine is not particularly limited, and examples thereof include o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'-diaminodiphenyl ether, and 3,4'-diaminodiphenyl Ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, bis (4-amino-3, 5-dimethylphenyl) methane, bis (4-amino-3,5-diisopropylphenyl) methane, 3,3'-diaminodiphenyldifluoromethane, 3,4'- Diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylphosphonium, 3,4'-diaminodiphenylphosphonium , 4,4'-diaminodiphenylphosphonium, 3,3'-diaminodiphenylsulfide, 3,4'-diaminodiphenyl Phenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl ketone, 3,4'-diaminodiphenyl ketone, 4,4'- Diaminodiphenyl ketone, 3- (4-aminophenyl) -1,1,3-trimethyl-5-aminoindan, 2,2-bis (3-aminophenyl) propane , 2,2 '-(3,4'-diaminodiphenyl) propane, 2,2-bis (4-aminophenyl) propane, 2,2-bis (3-aminophenyl) hexadecane Fluoropropane, 2,2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2-bis (4-aminophenyl) hexafluoropropane, 1,3-bis (3-amine Phenylphenoxy) benzene, 1,4-bis (3-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3 '-(1,4- Phenylbis (1-methylethylene)) bisaniline, 3,4 '-(1,4-phenylenebis (1-methylethylene)) bisaniline, 4,4'-(1 , 4-phenylenebis (1-methylethylene)) bisaniline, 2,2-bis (4- (3-aminophenoxy) phenyl) propane, 2,2-bis (4- (3-aminophenoxy) phenyl) hexafluoropropane, 2,2-bis (4- (4-aminophenoxy) phenyl) hexafluoropropane, bis (4- (3-aminoethyl) (Oxy) phenyl) sulfide, bis (4- (4-aminoethoxy) phenyl) sulfide, bis (4- (3-aminoethoxy) phenyl) fluorene, bis (4- (4-Aminoethoxy) phenyl) fluorene, 3,3'-dihydroxy-4,4'-diamine Aromatic diamines such as biphenyl, 3,5-diaminobenzoic acid, 1,3-bis (aminomethyl) cyclohexane, 2,2-bis (4-aminophenoxyphenyl) propane , Polyoxypropylene diamine, 4,9-dioxadecane-1,12-diamine, 4,9,14-trioxaheptadecan-1,17-diamine, 1,2- Diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-di Aminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, 1,12- Diaminododecane, 1,2-diaminocyclohexane, 1,3-bis (3-aminopropyl) tetramethyldisilaxane, and the like.

該些二胺中,較佳為選自由3-(4-胺基苯基)-1,1,3-三甲基-5-胺基茚滿、1,3-雙(3-胺基丙基)四甲基二矽氧烷、聚氧伸丙基二胺、2,2-雙(4-胺基苯氧基苯基)丙烷、4,9-二氧雜癸烷-1,12-二胺、1,6- 二胺基己烷及4,9,14-三氧雜十七烷-1,17-二胺所組成的組群中的一種以上,更佳為3-(4-胺基苯基)-1,1,3-三甲基-5-胺基茚滿。 Among these diamines, it is preferably selected from 3- (4-aminophenyl) -1,1,3-trimethyl-5-aminoindan, 1,3-bis (3-aminopropyl) Group) tetramethyldisilaxane, polyoxypropylene diamine, 2,2-bis (4-aminophenoxyphenyl) propane, 4,9-dioxadecane-1,12- Diamine, 1,6- One or more of the group consisting of diaminohexane and 4,9,14-trioxaheptadecan-1,17-diamine, more preferably 3- (4-aminophenyl) -1 , 1,3-trimethyl-5-aminoindan.

所述四羧酸二酐與二胺的反應中所用的溶劑例如可列舉:N,N-二甲基乙醯胺、N-甲基-2-吡咯啶酮、N,N-二甲基甲醯胺。為了調整原材料等的溶解性,亦可併用非極性溶劑(例如甲苯或二甲苯)。 Examples of the solvent used in the reaction of the tetracarboxylic dianhydride and diamine include N, N-dimethylacetamide, N-methyl-2-pyrrolidone, N, N-dimethylformamide Lamine. In order to adjust the solubility of raw materials and the like, a non-polar solvent (for example, toluene or xylene) may be used in combination.

所述四羧酸二酐與二胺的反應溫度較佳為低於100℃,更佳為低於90℃。另外,聚醯胺酸的醯亞胺化具代表性的是藉由在惰性環境(具代表性的是真空或氮氣環境)下進行加熱處理而進行。加熱處理溫度較佳為150℃以上,更佳為180℃~450℃。 The reaction temperature of the tetracarboxylic dianhydride and diamine is preferably lower than 100 ° C, and more preferably lower than 90 ° C. In addition, the fluorene imidization of polyamic acid is typically performed by performing a heat treatment in an inert environment (typically, a vacuum or nitrogen atmosphere). The heat treatment temperature is preferably 150 ° C or higher, and more preferably 180 ° C to 450 ° C.

聚醯亞胺樹脂的重量平均分子量(Mw)較佳為10,000~1000,000,更佳為20,000~100,000。 The weight average molecular weight (Mw) of the polyimide resin is preferably 10,000 to 1,000,000, and more preferably 20,000 to 100,000.

本發明中,聚醯亞胺樹脂較佳為對選自γ-丁內酯、環戊酮、N-甲基吡咯啶酮、環己酮、二醇醚、二甲基亞碸及四甲基脲中的至少一種溶劑的25℃下的溶解度為10g/100g溶劑(Solvent)以上的聚醯亞胺樹脂。 In the present invention, the polyfluorene imide resin is preferably selected from the group consisting of γ-butyrolactone, cyclopentanone, N-methylpyrrolidone, cyclohexanone, glycol ether, dimethylsulfinium, and tetramethyl. Polyimide resin having at least one solvent in urea having a solubility at 25 ° C. of 10 g / 100 g of a solvent (Solvent) or more.

具有此種溶解度的聚醯亞胺樹脂例如可列舉:使3,4,3',4'-二苯甲酮四羧酸二酐與3-(4-胺基苯基)-1,1,3-三甲基-5-胺基茚滿反應而獲得的聚醯亞胺樹脂等。該聚醯亞胺樹脂的耐熱性特別優異。 Examples of the polyimide resin having such a solubility include 3,4,3 ', 4'-benzophenonetetracarboxylic dianhydride and 3- (4-aminophenyl) -1,1, Polyimide resin obtained by 3-trimethyl-5-aminoindan reaction and the like. This polyimide resin is particularly excellent in heat resistance.

聚醯亞胺樹脂亦可使用市售品。例如可列舉:杜麗密(Durimide)(註冊商標)200、杜麗密(Durimide)208A、杜麗密(Durimide)284(富士膠片(Fujifilm)公司製造),GPT-LT(群 榮化學公司製造),SOXR-S、SOXR-M、SOXR-U、SOXR-C(均為日本高度紙工業公司製造)等。 A commercially available polyimide resin can also be used. Examples include: Durimide (registered trademark) 200, Durimide 208A, Durimide 284 (manufactured by Fujifilm), GPT-LT (group Sakae Chemical Co., Ltd.), SOXR-S, SOXR-M, SOXR-U, SOXR-C (all manufactured by Nippon Kogyo Paper Co., Ltd.), etc.

<<<<聚醯胺醯亞胺樹脂>>>> <<< Polyamidamine imine resin >>>>

聚醯胺醯亞胺樹脂例如可使用:使多羧酸或其衍生物等酸成分與二胺或二異氰酸酯於極性溶劑中反應而獲得的聚醯胺醯亞胺樹脂。 As the polyamidoimide resin, for example, a polyamidoimide resin obtained by reacting an acid component such as a polycarboxylic acid or a derivative thereof with a diamine or a diisocyanate in a polar solvent can be used.

極性溶劑可列舉N-甲基-2-吡咯啶酮(NMP)或N,N'-二甲基乙醯胺等。所述反應可藉由一面加熱至既定溫度(通常為60℃~200℃左右)一面攪拌而進行。 Examples of the polar solvent include N-methyl-2-pyrrolidone (NMP) and N, N'-dimethylacetamide. The reaction can be performed by stirring while heating to a predetermined temperature (usually about 60 ° C to 200 ° C).

用於製造聚醯胺醯亞胺樹脂的酸成分可列舉:偏苯三甲酸、偏苯三甲酸酐、偏苯三甲醯氯;均苯四甲酸(苯-1,2,4,5-四羧酸)、聯苯四羧酸、聯苯碸四羧酸、二苯甲酮四羧酸、聯苯醚四羧酸、乙二醇雙偏苯三酸酯、丙二醇雙偏苯三酸酯等四羧酸及該些酸的酸酐或醯氯;草酸、己二酸、丙二酸、癸二酸、壬二酸、十二烷二羧酸、二羧基聚丁二烯、二羧基聚(丙烯腈-丁二烯)、二羧基聚(苯乙烯-丁二烯)等脂肪族二羧酸;1,4-環己烷二羧酸、1,3-環己烷二羧酸、4,4'-二環己基甲烷二羧酸、二聚酸等脂環族二羧酸;對苯二甲酸、間苯二甲酸、二苯基碸二羧酸、二苯基醚二羧酸、萘二羧酸等芳香族二羧酸。 Examples of acid components used in the production of polyamidoamine imine resins include: trimellitic acid, trimellitic anhydride, trimellitic chloride; pyromellitic acid (benzene-1,2,4,5-tetracarboxylic acid ), Tetracarboxylic acids such as biphenyltetracarboxylic acid, biphenylphosphonium tetracarboxylic acid, benzophenone tetracarboxylic acid, diphenyl ether tetracarboxylic acid, ethylene glycol ditrimellitic acid ester, propylene glycol ditrimellitic acid ester, etc. Acids and their anhydrides or chloros; oxalic acid, adipic acid, malonic acid, sebacic acid, azelaic acid, dodecanedicarboxylic acid, dicarboxylic polybutadiene, dicarboxylic poly (acrylonitrile- Butadiene), dicarboxylic poly (styrene-butadiene) and other aliphatic dicarboxylic acids; 1,4-cyclohexanedicarboxylic acid, 1,3-cyclohexanedicarboxylic acid, 4,4'- Cycloaliphatic dicarboxylic acids such as dicyclohexylmethanedicarboxylic acid and dimer acid; terephthalic acid, isophthalic acid, diphenylphosphonium dicarboxylic acid, diphenyl ether dicarboxylic acid, naphthalenedicarboxylic acid, etc. Aromatic dicarboxylic acid.

該些酸成分可單獨使用,亦可組合使用兩種以上。該些酸成分中,就反應性、耐熱性、溶解性等觀點而言,較佳為偏苯三甲酸酐。 These acid components may be used alone or in combination of two or more. Among these acid components, trimellitic anhydride is preferred from the viewpoints of reactivity, heat resistance, and solubility.

用於製造聚醯胺醯亞胺樹脂的二胺或二異氰酸酯可列舉: Examples of diamines or diisocyanates used in the manufacture of polyamidoamine imine resins include:

乙二胺、丙二胺、六亞甲基二胺等脂肪族二胺及該些二胺的二異氰酸酯;1,4-環己烷二胺、1,3-環己烷二胺、異佛爾酮二胺、4,4'-二環己基甲烷二胺等脂環族二胺及該些二胺的二異氰酸酯;間苯二胺、對苯二胺、4,4'-二胺基二苯基甲烷、4'-二胺基二苯基醚、4,4'-二胺基二苯基碸、聯苯胺、鄰聯甲苯胺、2,4-甲苯二胺、2,6-甲苯二胺、苯二甲二胺(xylylene amine)等芳香族二胺及該些二胺的二異氰酸酯等。 Aliphatic diamines such as ethylene diamine, propylene diamine, hexamethylene diamine, and diisocyanates of these diamines; 1,4-cyclohexanediamine, 1,3-cyclohexanediamine, isophor Alicyclic diamines such as ketone diamine, 4,4'-dicyclohexylmethane diamine and diisocyanates of these diamines; m-phenylenediamine, p-phenylenediamine, 4,4'-diamine Phenylmethane, 4'-diaminodiphenyl ether, 4,4'-diaminodiphenylphosphonium, benzidine, o-toluidine, 2,4-toluenediamine, 2,6-toluenediamine Aromatic diamines such as amines, xylylene amines, and diisocyanates of these diamines.

該些化合物可單獨使用,亦可組合使用兩種以上。其中,就耐熱性、機械特性、溶解性等方面而言,較佳為4,4'-二胺基二苯基甲烷及其二異氰酸酯、2,4-甲苯二胺及其二異氰酸酯、鄰聯甲苯胺及其二異氰酸酯、異佛爾酮二胺及其二異氰酸酯、對苯二胺及其二異氰酸酯,尤佳為對苯二胺。 These compounds may be used alone or in combination of two or more. Among them, in terms of heat resistance, mechanical properties, solubility, etc., 4,4'-diaminodiphenylmethane and its diisocyanate, 2,4-toluenediamine and its diisocyanate, and vicinal are preferred. Toluidine and its diisocyanate, isophorone diamine and its diisocyanate, p-phenylenediamine and its diisocyanate, particularly preferably p-phenylenediamine.

聚醯胺醯亞胺樹脂的數量平均分子量(Mn)較佳為5,000~100,000。更佳為10,000~50,000。 The number average molecular weight (Mn) of the polyamidoamine imine resin is preferably 5,000 to 100,000. More preferably, it is 10,000 to 50,000.

若聚醯胺醯亞胺樹脂的數量平均分子量(Mn)為5,000以上,則耐久性良好。若聚醯胺醯亞胺樹脂的數量平均分子量(Mn)為100,000以下,則溶液黏度降低,容易塗佈形成接著區域。 When the number average molecular weight (Mn) of the polyamidoamine imine resin is 5,000 or more, durability is good. When the number average molecular weight (Mn) of the polyamidofluorine imine resin is 100,000 or less, the viscosity of the solution decreases, and it is easy to apply to form a bonding region.

聚醯胺醯亞胺樹脂亦可使用市售品。例如可列舉:杜麗密(Durimide)(註冊商標)10、杜麗密(Durimide)32(富士膠片(Fujifilm)公司製造),瓦羅麥(Vylomax)(註冊商標)13NX (東洋紡製公司製造),麗佳可(Rikacoat)(新日本理化製造)等。 A commercially available polyimide / imide resin can also be used. Examples include: Durimide (registered trademark) 10, Durimide 32 (manufactured by Fujifilm), Vylomax (registered trademark) 13NX (Manufactured by Toyobo Co., Ltd.), Rikacoat (manufactured by New Japan Physicochemical Co., Ltd.), etc.

<<<<聚苯并咪唑樹脂>>>> <<<< Polybenzimidazole resin >>>>

聚苯并咪唑樹脂例如可使用使芳香族四胺與二羧酸成分反應所得的聚苯并咪唑樹脂。 As the polybenzimidazole resin, for example, a polybenzimidazole resin obtained by reacting an aromatic tetraamine with a dicarboxylic acid component can be used.

芳香族四胺例如可列舉:1,2,4,5-四胺基苯、1,2,5,6-四胺基萘二甲酸酯、2,3,6,7-四胺基萘二甲酸酯、3,3',4,4'-四胺基二苯基甲烷、3,3',4,4'-四胺基二苯基乙烷、3,3',4,4'-四胺基二苯基-2,2-丙烷、3,3'4,4'-四胺基二苯基硫醚及3,3',4,4'-四胺基二苯基碸等。較佳的芳香族四胺為3,3',4,4'-四胺基聯苯。 Examples of the aromatic tetraamine include 1,2,4,5-tetraaminobenzene, 1,2,5,6-tetraaminonaphthalate, and 2,3,6,7-tetraaminonaphthalene Diformate, 3,3 ', 4,4'-tetraaminodiphenylmethane, 3,3', 4,4'-tetraaminodiphenylethane, 3,3 ', 4,4 '-Tetraaminodiphenyl-2,2-propane, 3,3'4,4'-tetraaminodiphenyl sulfide and 3,3', 4,4'-tetraaminodiphenylsulfonium Wait. The preferred aromatic tetraamine is 3,3 ', 4,4'-tetraaminobiphenyl.

二羧酸成分例如可列舉:間苯二甲酸、對苯二甲酸、4,4'-聯苯二羧酸、1,4-萘二羧酸、2,2'-聯苯二羧酸(dophenic acid)、苯基茚滿二羧酸、1,6-萘二羧酸、2,6-萘二羧酸、4,4'-二苯基硫醚二羧酸、4,4'-二苯基碸二羧酸、4,4'-二苯基硫醚二羧酸。 Examples of the dicarboxylic acid component include isophthalic acid, terephthalic acid, 4,4'-biphenyldicarboxylic acid, 1,4-naphthalenedicarboxylic acid, and 2,2'-biphenyldicarboxylic acid (dophenic acid), phenylindane dicarboxylic acid, 1,6-naphthalenedicarboxylic acid, 2,6-naphthalenedicarboxylic acid, 4,4'-diphenylsulfide dicarboxylic acid, 4,4'-diphenyl Hydrazone dicarboxylic acid, 4,4'-diphenyl sulfide dicarboxylic acid.

二羧酸成分較佳為相對於每莫耳芳香族四胺而以約1莫耳的二羧酸成分比率導入。再者,聚合系的反應物的最適比例可由本區域技術人員容易地決定。 The dicarboxylic acid component is preferably introduced at a dicarboxylic acid component ratio of about 1 mole per mole of the aromatic tetraamine. Moreover, the optimum ratio of the polymerization-type reactant can be easily determined by those skilled in the art.

聚苯并咪唑樹脂的例子可列舉:聚-2,2'-(間伸苯基)-5,5'-二苯并咪唑(poly-2,2'-(m-phenylene)-5,5'-bibenzimidazole)、聚-2,2'-(伸聯苯基-2"2"')-5,5'-二苯并咪唑、聚-2,2'-(伸聯苯基-4"4"')-5,5'-二苯并咪唑、聚-2,2'-(1",1",3"-三甲基伸茚滿基-3"5"-對伸苯基-5,5'-二苯并咪唑、2,2'-(間伸苯基)-5,5'-二苯并咪唑/2,2-(1",1",3"-三甲基伸茚滿基)5",3"-(對伸苯基)-5,5'-二苯并咪唑 共聚物、2,2'-(間伸苯基)-5,5'-二苯并咪唑/2,2'-伸聯苯基-2","')-5,5'-二苯并咪唑共聚物、聚-2,2'-(亞呋喃基-2",5")-5,5'-二苯并咪唑、聚-2,2'-(間伸苯基)-5,5'-二苯并咪唑、聚-2,2'-(萘-1",6")-5,5'-二苯并咪唑、聚-2,2'-(萘-2",6")-5,5'-二苯并咪唑、聚-2,2'-戊烯-5,5'-二苯并咪唑、聚-2,2'-八亞甲基-5,5'-二苯并咪唑、聚-2,2'-(間伸苯基)-二咪唑并苯、聚-2,2'-環己烯基-5,5'-二苯并咪唑、聚-2,2'-(間伸苯基)-5,5'-二(苯并咪唑)醚、聚-2,2'-(間伸苯基)-5,5'-二(苯并咪唑)硫醚、聚-2,2'-(間伸苯基)-5,5'-二(苯并咪唑)碸、聚-2,2'-(間伸苯基)-5,5'-二(苯并咪唑)甲烷、聚-2,2'-(間伸苯基)-5,5'-二(苯并咪唑)丙烷及聚-伸乙基-1,2-2,2"-(間伸苯基)-5,5"-二苯并咪唑-伸乙基-1,2等。 Examples of the polybenzimidazole resin include poly-2,2 '-(m-phenylene) -5,5'-dibenzimidazole (poly-2,2'-(m-phenylene) -5,5 '-bibenzimidazole), Poly-2,2'-(Extended Biphenyl-2 "2" ')-5,5'-dibenzimidazole, Poly-2,2'-(Extended Biphenyl-4 " 4 "')-5,5'-dibenzimidazole, poly-2,2'-(1", 1 ", 3" -trimethylindanyl-3 "5" -p-phenylene- 5,5'-dibenzimidazole, 2,2 '-(m-phenylene) -5,5'-dibenzimidazole / 2,2- (1 ", 1", 3 "-trimethylbenzyl (Indanyl) 5 ", 3"-(p-phenylene) -5,5'-dibenzimidazole Copolymer, 2,2 '-(m-phenylene) -5,5'-dibenzimidazole / 2,2'-biphenylphenyl-2 ","')-5,5'-dibenzo Imidazole copolymer, poly-2,2 '-(furanyl-2 ", 5")-5,5'-dibenzimidazole, poly-2,2'-(m-phenylene) -5,5 '-Dibenzimidazole, poly-2,2'-(naphthalene-1 ", 6")-5,5'-dibenzimidazole, poly-2,2 '-(naphthalene-2 ", 6") -5,5'-dibenzimidazole, poly-2,2'-pentene-5,5'-dibenzimidazole, poly-2,2'-octamethylene-5,5'-diphenyl Benzimidazole, poly-2,2 '-(m-phenylene) -diimidazobenzene, poly-2,2'-cyclohexenyl-5,5'-dibenzimidazole, poly-2,2' -(M-phenylene) -5,5'-bis (benzimidazole) ether, poly-2,2 '-(m-phenylene) -5,5'-bis (benzimidazole) sulfide, poly -2,2 '-(m-phenylene) -5,5'-bis (benzimidazole) fluorene, poly-2,2'-(m-phenylene) -5,5'-bis (benzimidazole) ) Methane, poly-2,2 '-(m-phenylene) -5,5'-bis (benzimidazole) propane and poly-methylene-1,2-2,2 "-(m-phenylene ) -5,5 "-dibenzimidazole-ethenyl-1,2, etc.

聚苯并咪唑樹脂亦可使用市售品。例如可列舉MRS0810H(PBI公司製造)等。 As a polybenzimidazole resin, you may use a commercial item. Examples thereof include MRS0810H (manufactured by PBI).

<<<<聚苯并噁唑樹脂>>>> <<<< Polybenzoxazole resin >>>>

聚苯并噁唑樹脂可使用:藉由將由雙胺基苯酚化合物與二羧酸衍生物所合成的多羥基醯胺溶解於溶劑中,經過脫水閉環反應所得的聚苯并噁唑樹脂等。 The polybenzoxazole resin can be used: a polybenzoxazole resin obtained by dissolving a polyhydroxyamidine synthesized from a bisaminophenol compound and a dicarboxylic acid derivative in a solvent and subjecting it to a dehydration ring-closing reaction.

雙胺基苯酚化合物可列舉:2,4-二胺基間苯二酚、4,6-二胺基間苯二酚、2,2-雙(3-胺基-4-羥基苯基)六氟丙烷、2,2-雙(4-胺基-3-羥基苯基)六氟丙烷、2,2-雙(3-胺基-4-羥基苯基)丙烷、2,2-雙(4-胺基-3-羥基苯基)丙烷、3,3'-二胺基-4,4'-二羥基二苯基碸、4,4'-二胺基-3,3'-二羥基二苯基碸、3,3'-二胺基-4,4'-二羥基聯苯、 4,4'-二胺基-3,3'-二羥基聯苯、9,9-雙(4-((4-胺基-3-羥基)苯氧基)苯基)茀、9,9-雙(4-((3-胺基-4-羥基)苯氧基)苯基)茀、9,9-雙(4-(3-胺基-4-羥基)苯基)茀、9,9-雙(4-(4-胺基-3-羥基)苯基)茀、1,1'-聯萘-3,3'-二胺基-2,2'-二醇、雙(2-((4-胺基-3-羥基)苯氧基))-1,1'-聯萘、雙(2-((3-胺基-4-羥基)苯氧基))-1,1'-聯萘、3,3'-二胺基-4,4'-二羥基二苯基醚、4,4'-二胺基-3,3'-二羥基二苯基醚、2,2-雙(3-胺基-4-羥基-2-三氟甲基苯基)丙烷、2,2-雙(4-胺基-3-羥基-2-三氟甲基苯基)丙烷、2,2-雙(3-胺基-4-羥基-5-三氟甲基苯基)丙烷、2,2-雙(4-胺基-3-羥基-5-三氟甲基苯基)丙烷、2,2-雙(3-胺基-4-羥基-6-三氟甲基苯基)丙烷、2,2-雙(4-胺基-3-羥基-6-三氟甲基苯基)丙烷、2,2-雙(3-胺基-4-羥基-2-三氟甲基苯基)六氟丙烷、2,2-雙(4-胺基-3-羥基-2-三氟甲基苯基)六氟丙烷、2,2-雙(3-胺基-4-羥基-5-三氟甲基苯基)六氟丙烷、2,2-雙(4-胺基-3-羥基-5-三氟甲基苯基)六氟丙烷、2,2-雙(3-胺基-4-羥基-6-三氟甲基苯基)六氟丙烷、2,2-雙(4-胺基-3-羥基-6-三氟甲基苯基)六氟丙烷、3,3'-二胺基-4,4'-二羥基-2,2'-雙(三氟甲基)聯苯、4,4'-二胺基-3,3'-二羥基-2,2'-雙(三氟甲基)聯苯、3,3'-二胺基-4,4'-二羥基-5,5'-雙(三氟甲基)聯苯、4,4'-二胺基-3,3'-二羥基-5,5'-雙(三氟甲基)聯苯、3,3'-二胺基-4,4'-二羥基-6,6'-雙(三氟甲基)聯苯、4,4'-二胺基-3,3'-二羥基-6,6'-雙(三氟甲基)聯苯等。 Examples of the diaminophenol compound include 2,4-diaminoresorcinol, 4,6-diaminoresorcinol, 2,2-bis (3-amino-4-hydroxyphenyl) hexa Fluoropropane, 2,2-bis (4-amino-3-hydroxyphenyl) hexafluoropropane, 2,2-bis (3-amino-4-hydroxyphenyl) propane, 2,2-bis (4 -Amino-3-hydroxyphenyl) propane, 3,3'-diamino-4,4'-dihydroxydiphenylphosphonium, 4,4'-diamino-3,3'-dihydroxydi Phenylhydrazone, 3,3'-diamino-4,4'-dihydroxybiphenyl, 4,4'-diamino-3,3'-dihydroxybiphenyl, 9,9-bis (4-((4-amino-3-hydroxy) phenoxy) phenyl) fluorene, 9,9 -Bis (4-((3-amino-4-hydroxy) phenoxy) phenyl) fluorene, 9,9-bis (4- (3-amino-4-hydroxy) phenyl) fluorene, 9 ,, 9-bis (4- (4-amino-3-hydroxy) phenyl) fluorene, 1,1'-binapthyl-3,3'-diamino-2,2'-diol, bis (2- ((4-amino-3-hydroxy) phenoxy))-1,1'-binaphalene, bis (2-((3-amino-4-hydroxy) phenoxy))-1,1 ' -Binaphthalene, 3,3'-diamino-4,4'-dihydroxydiphenyl ether, 4,4'-diamino-3,3'-dihydroxydiphenyl ether, 2,2- Bis (3-amino-4-hydroxy-2-trifluoromethylphenyl) propane, 2,2-bis (4-amino-3-hydroxy-2-trifluoromethylphenyl) propane, 2, 2-bis (3-amino-4-hydroxy-5-trifluoromethylphenyl) propane, 2,2-bis (4-amino-3-hydroxy-5-trifluoromethylphenyl) propane, 2,2-bis (3-amino-4-hydroxy-6-trifluoromethylphenyl) propane, 2,2-bis (4-amino-3-hydroxy-6-trifluoromethylphenyl) Propane, 2,2-bis (3-amino-4-hydroxy-2-trifluoromethylphenyl) hexafluoropropane, 2,2-bis (4-amino-3-hydroxy-2-trifluoromethyl) Phenyl) hexafluoropropane, 2,2-bis (3-amino-4-hydroxy-5-trifluoromethylphenyl) hexafluoropropane, 2,2-bis (4-amino- 3-hydroxy-5-trifluoromethylphenyl) hexafluoropropane, 2,2-bis (3-amino-4-hydroxy-6-trifluoromethylphenyl) hexafluoropropane, 2,2-bis (4-amino-3-hydroxy-6-trifluoromethylphenyl) hexafluoropropane, 3,3'-diamino-4,4'-dihydroxy-2,2'-bis (trifluoromethyl) Group) biphenyl, 4,4'-diamino-3,3'-dihydroxy-2,2'-bis (trifluoromethyl) biphenyl, 3,3'-diamino-4,4 ' -Dihydroxy-5,5'-bis (trifluoromethyl) biphenyl, 4,4'-diamino-3,3'-dihydroxy-5,5'-bis (trifluoromethyl) biphenyl , 3,3'-diamino-4,4'-dihydroxy-6,6'-bis (trifluoromethyl) biphenyl, 4,4'-diamino-3,3'-dihydroxy- 6,6'-bis (trifluoromethyl) biphenyl and the like.

二羧酸衍生物可列舉:使選自間苯二甲酸、對苯二甲酸、4,4'-聯苯二羧酸、3,4'-聯苯二羧酸、3,3'-聯苯二羧酸、2,6-萘二羧酸、1,4-萘二羧酸、4,4'-磺醯基雙苯甲酸、3,4'-磺醯基雙苯甲 酸、3,3'-磺醯基雙苯甲酸、4,4'-氧基雙苯甲酸、3,4'-氧基雙苯甲酸、3,3'-氧基雙苯甲酸、2,2-雙(4-羧基苯基)丙烷、2,2-雙(3-羧基苯基)丙烷、2,2-雙(4-羧基苯基)六氟丙烷、2,2-雙(3-羧基苯基)六氟丙烷、4,4'-雙(4-羧基苯氧基)聯苯、4,4'-雙(3-羧基苯氧基)聯苯、3,4'-雙(4-羧基苯氧基)聯苯、3,4'-雙(3-羧基苯氧基)聯苯、3,3'-雙(4-羧基苯氧基)聯苯、3,3'-雙(3-羧基苯氧基)聯苯、4,4'-雙(4-羧基苯氧基)-對聯三苯、4,4'-雙(4-羧基苯氧基)-間聯三苯、3,4'-雙(4-羧基苯氧基)-對聯三苯、3,3'-雙(4-羧基苯氧基)-對聯三苯、3,4'-雙(4-羧基苯氧基)-間聯三苯、3,3'-雙(4-羧基苯氧基)-間聯三苯、4,4'-雙(3-羧基苯氧基)-對聯三苯、4,4'-雙(3-羧基苯氧基)-間聯三苯、3,4'-雙(3-羧基苯氧基)-對聯三苯、3,3'-雙(3-羧基苯氧基)-對聯三苯、3,4'-雙(3-羧基苯氧基)-間聯三苯、3,3'-雙(3-羧基苯氧基)-間聯三苯、2,2'-雙(三氟甲基)-4,4'-聯苯二羧酸、3,3'-雙(三氟甲基)-4,4'-聯苯二羧酸、2,2'-雙(三氟甲基)-3,3'-聯苯二羧酸、2,2'-二甲基-4,4'-聯苯二羧酸、3,3'-二甲基-4,4'-聯苯二羧酸、2,2'-二甲基-3,3'-聯苯二羧酸、3-氟間苯二甲酸、2-氟間苯二甲酸、2-氟對苯二甲酸、2,4,5,6-四氟間苯二甲酸、2,3,5,6-四氟對苯二甲酸、5-三氟甲基間苯二甲酸等中的二羧酸,與選自1-羥基苯并三唑、1-羥基苯并噻唑、對硝基苯酚中的一種以上進行反應所得的羧酸衍生物等。 Examples of the dicarboxylic acid derivative include isophthalic acid, terephthalic acid, 4,4'-biphenyldicarboxylic acid, 3,4'-biphenyldicarboxylic acid, and 3,3'-biphenyl. Dicarboxylic acid, 2,6-naphthalenedicarboxylic acid, 1,4-naphthalenedicarboxylic acid, 4,4'-sulfofluorenylbisbenzoic acid, 3,4'-sulfofluorenylbisbenzoic acid Acid, 3,3'-sulfobibenzoic acid, 4,4'-oxybisbenzoic acid, 3,4'-oxybisbenzoic acid, 3,3'-oxybisbenzoic acid, 2,2 -Bis (4-carboxyphenyl) propane, 2,2-bis (3-carboxyphenyl) propane, 2,2-bis (4-carboxyphenyl) hexafluoropropane, 2,2-bis (3-carboxy Phenyl) hexafluoropropane, 4,4'-bis (4-carboxyphenoxy) biphenyl, 4,4'-bis (3-carboxyphenoxy) biphenyl, 3,4'-bis (4- Carboxyphenoxy) biphenyl, 3,4'-bis (3-carboxyphenoxy) biphenyl, 3,3'-bis (4-carboxyphenoxy) biphenyl, 3,3'-bis (3 -Carboxyphenoxy) biphenyl, 4,4'-bis (4-carboxyphenoxy) -p-terphenyl, 4,4'-bis (4-carboxyphenoxy) -m-terphenyl, 3, 4'-bis (4-carboxyphenoxy) -p-terphenyl, 3,3'-bis (4-carboxyphenoxy) -p-terphenyl, 3,4'-bis (4-carboxyphenoxy) -M-terphenyl, 3,3'-bis (4-carboxyphenoxy) -m-terphenyl, 4,4'-bis (3-carboxyphenoxy) -p-terphenyl, 4,4'- Bis (3-carboxyphenoxy) -m-terphenyl, 3,4'-bis (3-carboxyphenoxy) -p-terphenyl, 3,3'-bis (3-carboxyphenoxy) -paraphenyl Triphenyl, 3,4'-bis (3-carboxyphenoxy) -m-terphenyl, 3,3'-bis (3-carboxyphenoxy) -m-terphenyl, 2,2'-bis ( Trifluoro (Methyl) -4,4'-biphenyldicarboxylic acid, 3,3'-bis (trifluoromethyl) -4,4'-biphenyldicarboxylic acid, 2,2'-bis (trifluoromethyl) ) -3,3'-biphenyldicarboxylic acid, 2,2'-dimethyl-4,4'-biphenyldicarboxylic acid, 3,3'-dimethyl-4,4'-biphenyldicarboxylic acid Carboxylic acid, 2,2'-dimethyl-3,3'-biphenyldicarboxylic acid, 3-fluoroisophthalic acid, 2-fluoroisophthalic acid, 2-fluoroterephthalic acid, 2,4 Dicarboxylic acids in 5,5,6-tetrafluoroisophthalic acid, 2,3,5,6-tetrafluoroterephthalic acid, 5-trifluoromethylisophthalic acid, etc., and selected from 1-hydroxyl A carboxylic acid derivative obtained by reacting one or more of benzotriazole, 1-hydroxybenzothiazole, and p-nitrophenol, and the like.

聚苯并噁唑樹脂亦可使用市售品。例如可列舉CRC-8800(住友電木(Sumitomo Bakelite)公司製造)等。 As the polybenzoxazole resin, a commercially available product can also be used. Examples include CRC-8800 (manufactured by Sumitomo Bakelite).

接著區域較佳為相對於接著區域的總固體成分量(除了 溶劑以外的量)而含有1質量%~99質量%的樹脂成分A,更佳為10質量%~90質量%,尤佳為25質量%~75質量%。 The adjoining area is preferably relative to the total solids content of the adjoining area (except for Amount other than the solvent) and contains 1% to 99% by mass of the resin component A, more preferably 10% to 90% by mass, and even more preferably 25% to 75% by mass.

另外,暫時接著膜較佳為相對於暫時接著膜的總固體成分量(除了溶劑以外的量)而含有1質量%~99質量%的樹脂成分A,更佳為10質量%~90質量%,尤佳為25質量%~75質量%。 In addition, the temporary bonding film preferably contains 1% to 99% by mass of the resin component A relative to the total solid content (amount other than the solvent) of the temporary bonding film, and more preferably 10% to 90% by mass. Especially preferred is 25% to 75% by mass.

樹脂成分A可僅為一種,亦可為兩種以上。於樹脂成分A為兩種以上的情形時,較佳為其合計為所述範圍。 The resin component A may be only one type, or two or more types. When the resin component A is two or more types, it is preferable that the total thereof is within the above range.

<<<交聯成分>>> <<< crosslinking component >>>

本發明中,接著區域較佳為含有馬來醯亞胺樹脂作為交聯成分。馬來醯亞胺樹脂只要硬化後的產物滿足所述質量減少率及溶解度,則可任意使用。 In the present invention, the bonding region preferably contains a maleimide resin as a crosslinking component. The maleimide resin can be used arbitrarily as long as the cured product satisfies the aforementioned mass reduction rate and solubility.

再者,於本發明中,將具有馬來醯亞胺基的化合物及該化合物交聯而成的交聯物合併稱為馬來醯亞胺樹脂。交聯物較佳為使用具有馬來醯亞胺基的化合物而成的三維交聯物。另外,具有馬來醯亞胺基的化合物可為單體,亦可為聚合物。 In the present invention, a compound having a maleimide group and a crosslinked product obtained by crosslinking the compound are referred to as a maleimide resin. The crosslinked product is preferably a three-dimensional crosslinked product using a compound having a maleimide group. The compound having a maleimidine group may be a monomer or a polymer.

本發明中,馬來醯亞胺樹脂較佳為雙馬來醯亞胺樹脂。 In the present invention, the maleimide imine resin is preferably a bismaleimide resin.

雙馬來醯亞胺樹脂例如更佳為選自下述通式(III)所表示的雙馬來醯亞胺樹脂、下述通式(IV)所表示的酚醛清漆型馬來醯亞胺樹脂中的至少一種。 The bismaleimide resin is more preferably, for example, a bismaleimide resin represented by the following general formula (III), and a novolak-type maleimide resin represented by the following general formula (IV) At least one of.

[化1] [Chemical 1]

通式(III)中,R表示含有芳香族環或者直鏈、分支鏈或環狀脂肪族烴基的二價有機基。 In the general formula (III), R represents a divalent organic group containing an aromatic ring or a linear, branched, or cyclic aliphatic hydrocarbon group.

R較佳為如下基團:苯基、甲苯基、二甲苯基、萘基、或者直鏈或分支鏈或環狀飽和烴基、或由該些基團的組合所構成的二價基團。 R is preferably a group such as a phenyl group, a tolyl group, a xylyl group, a naphthyl group, a linear or branched chain or a cyclic saturated hydrocarbon group, or a divalent group composed of a combination of these groups.

R較佳為下述式(v)、式(vi)或式(vii)所表示的二價基團。 R is preferably a divalent group represented by the following formula (v), formula (vi), or formula (vii).

[化3] [Chemical 3]

通式(IV)中,s表示0~20的整數。 In General Formula (IV), s represents an integer of 0-20.

本發明中,馬來醯亞胺樹脂亦可使用日本專利特開2003-321608號公報的段落編號0020~段落編號0023中記載的馬來醯亞胺樹脂。 In the present invention, the maleimide imine resin described in Japanese Patent Application Laid-Open No. 2003-321608 may be used as the maleimide resin described in paragraph number 0020 to paragraph number 023.

馬來醯亞胺樹脂的市售品可列舉:BMI-1000、BMI-2000、BMI-3000、BMI-4000、BMI-5000、BMI-5100、BMI-7000(大和化成工業製造,雙馬來醯亞胺樹脂),BANI-X(新中村化學製造,雙馬來醯亞胺樹脂),BANI-M(新中村化學製造,雙馬來醯亞胺樹脂)等。 Examples of commercially available products of maleimide imine resin include: BMI-1000, BMI-2000, BMI-3000, BMI-4000, BMI-5000, BMI-5100, and BMI-7000 (manufactured by Yamato Chemical Industries, double-Malaysian Imine resin), BANI-X (manufactured by Shin Nakamura Chemical, bismaleimide imine resin), BANI-M (manufactured by Shin Nakamura Chemical, bismaleimide imine resin), etc.

接著區域較佳為相對於接著區域的總固體成分量(除了溶劑以外的量)而含有1質量%~99質量%的馬來醯亞胺樹脂,更佳為10質量%~90質量%,尤佳為25質量%~75質量%。若馬來醯亞胺樹脂的含量為所述範圍,則可進一步提高接著區域的耐熱性。 The next region preferably contains 1% to 99% by mass of maleimide resin relative to the total solid content (amount other than solvent) of the next region, more preferably 10% to 90% by mass, especially It is preferably 25% to 75% by mass. When the content of the maleimide resin is within the above range, the heat resistance of the bonding region can be further improved.

另外,暫時接著膜較佳為相對於暫時接著膜的總固體成分量(除了溶劑以外的量)而含有1質量%~99質量%的馬來醯亞胺樹 脂,更佳為10質量%~90質量%,尤佳為25質量%~75質量%。 In addition, the temporary bonding film preferably contains 1 to 99% by mass of the maleimide tree based on the total solid content (amount other than the solvent) of the temporary bonding film. Fat, more preferably 10% to 90% by mass, and even more preferably 25% to 75% by mass.

馬來醯亞胺樹脂較佳為於接著區域所含的交聯成分的總質量中含有10質量%~100質量%,更佳為20質量%~100質量%,進而佳為50質量%~100質量%,尤佳為80質量%~100質量%。最佳為交聯成分實質上僅由馬來醯亞胺樹脂所構成。再者,所謂實質上僅由馬來醯亞胺樹脂所構成,是指交聯成分的總量中馬來醯亞胺樹脂以外的交聯成分的含量較佳為例如1質量%以下,更佳為0.5質量%以下,尤佳為0.1質量%以下。根據該態樣,可進一步提高接著區域的耐熱性。 The maleimide resin preferably contains 10% to 100% by mass, more preferably 20% to 100% by mass, and even more preferably 50% to 100% by mass of the total mass of the crosslinking component contained in the bonding region. Mass%, particularly preferably from 80% to 100% by mass. Most preferably, the crosslinking component consists essentially of a maleimide resin. The term “substantially only composed of maleimide resin” means that the content of cross-linking components other than maleimide resin in the total amount of crosslinking components is preferably, for example, 1% by mass or less, and more preferably It is 0.5% by mass or less, and particularly preferably 0.1% by mass or less. According to this aspect, the heat resistance of the bonding region can be further improved.

本發明的接著區域亦可含有馬來醯亞胺樹脂以外的交聯成分(其他交聯成分)。其他交聯成分可使用:具有兩個以上的聚合性基且可藉由光化射線、放射線、光、熱、自由基或酸的作用而聚合的公知的化合物。聚合性基例如可列舉具有乙烯性不飽和鍵的基團、環氧基等。乙烯性不飽和鍵基較佳為乙烯基、丙烯酸基、甲基丙烯酸基、烯丙基。 The adhesive region of the present invention may contain a crosslinking component (other crosslinking component) other than the maleimide resin. As the other crosslinking component, a known compound having two or more polymerizable groups and polymerizable by the action of actinic rays, radiation, light, heat, radicals, or acids can be used. Examples of the polymerizable group include a group having an ethylenically unsaturated bond, an epoxy group, and the like. The ethylenically unsaturated bond group is preferably a vinyl group, an acrylic group, a methacrylic group, or an allyl group.

含有具有乙烯性不飽和鍵的基團的化合物例如可列舉:碳數3~35的(甲基)丙烯醯胺化合物、碳數4~35的(甲基)丙烯酸酯化合物、碳數6~35的芳香族乙烯系化合物、碳數3~20的乙烯醚化合物等。 Examples of the compound containing a group having an ethylenically unsaturated bond include (meth) acrylamide compounds having 3 to 35 carbon atoms, (meth) acrylate compounds having 4 to 35 carbon atoms, and 6 to 35 carbon atoms. Aromatic vinyl compounds, vinyl ether compounds having 3 to 20 carbon atoms, and the like.

具有環氧基的化合物例如可列舉:雙酚A型(或AD型、S型、F型)的縮水甘油醚、氫化雙酚A型的縮水甘油醚、環氧乙烷加成物雙酚A型的縮水甘油醚、環氧丙烷加成物雙酚A型的縮 水甘油醚、苯酚酚醛清漆樹脂的縮水甘油醚、甲酚酚醛清漆樹脂的縮水甘油醚、雙酚A酚醛清漆樹脂的縮水甘油醚、萘樹脂的縮水甘油醚、三官能型(或四官能型)的縮水甘油醚、二環戊二烯苯酚樹脂的縮水甘油醚、二烯丙基雙酚A二縮水甘油醚、烯丙基化雙酚A與表氯醇的縮聚物、二聚酸的縮水甘油酯、三官能型(或四官能型)的縮水甘油胺、萘樹脂的縮水甘油胺等。 Examples of the compound having an epoxy group include glycidyl ether of bisphenol A type (or AD type, S type, and F type), glycidyl ether of hydrogenated bisphenol A type, and ethylene oxide adduct bisphenol A. Type glycidyl ether, propylene oxide adduct bisphenol A type Glycidyl ether, glycidyl ether of phenol novolac resin, glycidyl ether of cresol novolac resin, glycidyl ether of bisphenol A novolac resin, glycidyl ether of naphthalene resin, trifunctional (or tetrafunctional) Glycidyl ether, glycidyl ether of dicyclopentadiene phenol resin, diallyl bisphenol A diglycidyl ether, polycondensation product of allyl bisphenol A and epichlorohydrin, glycidol of dimer acid Ester, trifunctional (or tetrafunctional) glycidylamine, glycidylamine of naphthalene resin, and the like.

本發明中,亦可含有具有環氧基的化合物作為交聯成分,就可進一步提高耐熱性的理由而言,交聯成分100質量份中的具有環氧基的化合物的含量亦可設定為10質量%以下,更佳為亦可設定為5質量%以下,尤其亦可實質上不含具有環氧基的化合物。再者,所謂實質上不含,例如是指具有環氧基的化合物的含量較佳為1質量%以下,更佳為0.5質量%以下,尤佳為0.1質量%以下,特別佳為不含。 In the present invention, a compound having an epoxy group may be contained as a cross-linking component, and the content of the compound having an epoxy group in 100 parts by mass of the cross-linking component may be set to 10 for reasons of further improving heat resistance. It may be set to 5% by mass or less, more preferably not more than 5% by mass, and may not substantially contain a compound having an epoxy group. The term “substantially free” means, for example, that the content of the compound having an epoxy group is preferably 1% by mass or less, more preferably 0.5% by mass or less, even more preferably 0.1% by mass or less, and particularly preferably not contained.

<<<熱聚合起始劑>>> <<< Thermal polymerization initiator >>>

本發明的接著區域較佳為更含有熱聚合起始劑。熱聚合起始劑可使用公知的熱聚合起始劑。 The bonding region of the present invention preferably further contains a thermal polymerization initiator. As the thermal polymerization initiator, a known thermal polymerization initiator can be used.

較佳的熱聚合起始劑可較佳地使用一分鐘半衰期溫度為130℃~300℃、較佳為150℃~260℃的範圍的化合物。根據該態樣,可進一步提高接著區域的耐熱性。 As the preferred thermal polymerization initiator, a compound having a one-minute half-life temperature of 130 ° C. to 300 ° C., preferably 150 ° C. to 260 ° C. can be preferably used. According to this aspect, the heat resistance of the bonding region can be further improved.

熱聚合起始劑的一分鐘半衰期溫度為熱聚合起始劑發生分解、其殘存量(質量)於一分鐘時成為1/2的溫度。熱聚合起始劑的一分鐘半衰期溫度例如可藉由以下方式測定:於苯中以0.1mol/l 製備熱聚合起始劑,於多個點的溫度Ti(絕對溫度)下進行加熱,測定各溫度Ti下的半衰期t1/2,T1,相對於1/Ti將1nt1/2,T1繪圖(plot),根據所得的直線求出半衰期為1分鐘的溫度。 The one-minute half-life temperature of the thermal polymerization initiator is a temperature at which the thermal polymerization initiator is decomposed and its residual amount (mass) becomes 1/2 in one minute. The one-minute half-life temperature of the thermal polymerization initiator can be measured, for example, by preparing a thermal polymerization initiator at 0.1 mol / l in benzene, heating at multiple points of temperature Ti (absolute temperature), and measuring each The half-life t 1/2, T1 at the temperature Ti is plotted against 1 / Ti with 1nt 1/2, T1 , and the temperature at which the half-life is 1 minute is obtained from the obtained straight line.

熱聚合起始劑較佳為藉由熱能而產生自由基、引發或促進馬來醯亞胺樹脂等交聯成分的反應的化合物(熱自由基產生劑)。 The thermal polymerization initiator is preferably a compound (thermal radical generator) that generates radicals by thermal energy and initiates or promotes a reaction of a cross-linking component such as a maleimide resin.

熱自由基產生劑可列舉:芳香族酮類、鎓鹽化合物、有機過氧化物、硫化合物、六芳基聯咪唑化合物、酮肟酯化合物、硼酸鹽化合物、吖嗪鎓化合物、茂金屬化合物、活性酯化合物、具有碳鹵素鍵的化合物、偶氮系化合物等。其中,更佳為有機過氧化物或偶氮系化合物,尤佳為有機過氧化物。 Examples of the thermal radical generator include aromatic ketones, onium salt compounds, organic peroxides, sulfur compounds, hexaarylbiimidazole compounds, ketoxime ester compounds, borate compounds, azineium compounds, metallocene compounds, Active ester compounds, compounds having a carbon halogen bond, azo compounds, and the like. Among these, an organic peroxide or an azo compound is more preferable, and an organic peroxide is more preferable.

熱自由基產生劑具體可列舉日本專利特開2008-63554號公報的段落0074~段落0118中記載的化合物。 Specific examples of the thermal radical generator include compounds described in paragraphs 0074 to 0118 of Japanese Patent Laid-Open No. 2008-63554.

另外,市售品中,有機過氧化物可列舉:日油公司的帕庫密路(Percumyl)D、帕庫密路(Percumyl)H、帕庫密路(Percumyl)ND、帕庫密路(Percumyl)P、帕牢宜路(Perloyl)IB、帕牢宜路(Perloyl)IP、帕牢宜路(Perloyl)L、帕牢宜路(Perloyl)NPP、帕牢宜路(Perloyl)SA、帕牢宜路(Perloyl)SBP、帕牢宜路(Perloyl)TCP,帕牢宜路(Perloyl)OPP、帕牢宜路(Perloyl)355、帕布其路(Perbutyl)D、帕布其路(Perbutyl)ND、帕布其路(Perbutyl)NHP、帕布其路(Perbutyl)PV、帕布其路(Perbutyl)P、帕布其路(Perbutyl)Z、帕布其路(Perbutyl)O、帕海客薩路(Perhexyl)ND、帕海客薩路(Perhexyl)O、帕海客薩路(Perhexyl)PV、帕 奧克塔(Perocta)ND、帕奧克塔(Perocta)O、耐帕(Nyper)BMT、耐帕(Nyper)BW、耐帕(Nyper)PMB、帕海客薩(Perhexa)HC、帕海客薩(Perhexa)MC、帕海客薩(Perhexa)TMH、帕海客薩(Perhexa)V、帕海客薩(Perhexa)25B、帕海客薩(Perhexa)25O、帕海客辛(Perhexyne)25B、帕麥堂(Permethane)H等。偶氮系化合物可列舉和光製造的V-601等。 In addition, among the commercially available products, examples of organic peroxides include: Percumyl D, Percumyl H, Percumyl ND, and Percumyl Road ( Percumyl P, Perloyl IB, Perloyl IP, Perloyl L, Perloyl NPP, Perloyl SA, Par Perloyl SBP, Perloyl TCP, Perloyl OPP, Perloyl 355, Perbutyl D, Perbutyl ) ND, Perbutyl NHP, Perbutyl PV, Perbutyl P, Perbutyl Z, Perbutyl Z, Perbutyl O, Pahai Perhexyl ND, Perhexyl O, Perhexyl PV, Parhexyl Perocta ND, Perocta O, Nyper BMT, Nyper BW, Nyper PMB, PerhexaHC, Perhaita Perhexa MC, PerhexTMH, PerhexV, Perhex 25B, Perhex 25O, Perhexyne 25B , Permethane H and others. Examples of the azo compound include V-601 manufactured by Wako.

接著區域較佳為相對於接著區域的總固體成分量(除了溶劑以外的量)而含有0.5質量%~20質量%的熱聚合起始劑,更佳為1質量%~10質量%,尤佳為2質量%~8質量%。若熱聚合起始劑的含量為所述範圍,則可進一步提高接著區域的耐熱性。 The next region preferably contains 0.5 to 20% by mass of the thermal polymerization initiator with respect to the total solid content (amount other than the solvent) of the next region, more preferably 1 to 10% by mass, and even more preferably It is 2% to 8% by mass. When the content of the thermal polymerization initiator is within the above range, the heat resistance of the bonding region can be further improved.

另外,暫時接著膜較佳為相對於暫時接著膜的總固體成分量(除了溶劑以外的量)而含有0.5質量%~20質量%的熱聚合起始劑,更佳為1質量%~10質量%,尤佳為2質量%~8質量%。 In addition, the temporary bonding film preferably contains a thermal polymerization initiator in an amount of 0.5% to 20% by mass, and more preferably 1% to 10% by mass relative to the total solid content (amount other than the solvent) of the temporary bonding film. %, Particularly preferably 2% to 8% by mass.

<<<界面活性劑>>> <<< Interactive Agent >>>

本發明的暫時接著膜的接著區域亦可含有界面活性劑。界面活性劑可使用氟系界面活性劑、非離子系界面活性劑、陽離子系界面活性劑、陰離子系界面活性劑、矽酮系界面活性劑等各種界面活性劑,較佳為氟系界面活性劑。 The bonding region of the temporary bonding film of the present invention may contain a surfactant. As the surfactant, various surfactants such as a fluorine-based surfactant, a non-ionic surfactant, a cationic surfactant, an anionic surfactant, and a silicone surfactant can be used, and a fluorine-based surfactant is preferred. .

於藉由塗佈法來形成接著區域的情形時,於製備成塗佈液時的溶液特性(特別是流動性)提高,可進一步改善塗佈厚度的均勻性或省液性。 When a bonding region is formed by a coating method, the solution characteristics (especially fluidity) when preparing a coating solution are improved, and the uniformity of coating thickness or the liquid saving property can be further improved.

氟系界面活性劑的氟含有率較佳為3質量%~40質量 %,更佳為5質量%~30質量%,進而佳為7質量%~25質量%。氟含有率為該範圍內的氟系界面活性劑於塗佈膜的厚度的均勻性或省液性的方面有效果。 The fluorine content of the fluorine-based surfactant is preferably 3% by mass to 40% by mass. %, More preferably 5 mass% to 30 mass%, and even more preferably 7 mass% to 25 mass%. A fluorine-based surfactant having a fluorine content in this range is effective in terms of the uniformity of the thickness of the coating film or the liquid-saving property.

氟系界面活性劑例如可列舉:美佳法(Megafac)F171、美佳法(Megafac)F172、美佳法(Megafac)F173、美佳法(Megafac)F176、美佳法(Megafac)F177、美佳法(Megafac)F141、美佳法(Megafac)F142、美佳法(Megafac)F143、美佳法(Megafac)F144、美佳法(Megafac)R30、美佳法(Megafac)F437、美佳法(Megafac)F475、美佳法(Megafac)F479、美佳法(Megafac)F482、美佳法(Megafac)F554、美佳法(Megafac)F780、美佳法(Megafac)F781(以上為迪愛生(DIC)(股)製造),弗拉德(Fluorad)FC430、弗拉德(Fluorad)FC431、弗拉德(Fluorad)FC171(以上為住友3M(股)製造),沙福隆(Surflon)S-382、沙福隆(Surflon)SC-101、沙福隆(Surflon)SC-103、沙福隆(Surflon)SC-104、沙福隆(Surflon)SC-105、沙福隆(Surflon)SC1068、沙福隆(Surflon)SC-381、沙福隆(Surflon)SC-383、沙福隆(Surflon)S393、沙福隆(Surflon)KH-40(以上為旭硝子(股)製造),PF636、PF656、PF6320、PF6520、PF7002(歐諾法(OMNOVA)公司製造)等。 Examples of the fluorine-based surfactant include: Megafac F171, Megafac F172, Megafac F173, Megafac F176, Megafac F177, Megafac F141 , Megafac F142, Megafac F143, Megafac F144, Megafac R30, Megafac F437, Megafac F475, Megafac F479, Megafac F482, Megafac F554, Megafac F780, Megafac F781 (the above are manufactured by DIC), Fluorad FC430, Ferox Fluorad FC431, Fluorad FC171 (the above are made by Sumitomo 3M), Surflon S-382, Surflon SC-101, Surflon ) SC-103 、 Surflon SC-104 、 Surflon SC-105 、 Surflon SC1068 、 Surflon SC-381 、 Surflon SC -383, Surflon S393, Surflon KH-40 (the above are manufactured by Asahi Glass), PF636, PF656, PF6320, PF6520, PF7002 (manufactured by OMNOVA), etc. .

非離子系界面活性劑可列舉:甘油、三羥甲基丙烷、三羥甲基乙烷以及該些化合物的乙氧基化物及丙氧基化物(例如丙氧基化甘油、乙氧基化甘油等)、聚氧伸乙基月桂基醚、聚氧伸乙 基硬脂基醚、聚氧伸乙基油基醚、聚氧伸乙基辛基苯基醚、聚氧伸乙基壬基苯基醚、聚乙二醇二月桂酸酯、聚乙二醇二硬脂酸酯、山梨醇酐脂肪酸酯(巴斯夫(BASF)公司製造的普羅尼克(Pluronic)L10、普羅尼克(Pluronic)L31、普羅尼克(Pluronic)L61、普羅尼克(Pluronic)L62、普羅尼克(Pluronic)10R5、普羅尼克(Pluronic)17R2、普羅尼克(Pluronic)25R2、特羅尼克(Tetronic)304、特羅尼克(Tetronic)701、特羅尼克(Tetronic)704、特羅尼克(Tetronic)901、特羅尼克(Tetronic)904、特羅尼克(Tetronic)150R1、索努帕斯(Solsperse)20000(日本路博潤(Lubrizol Japan)(股)製造)等。 Non-ionic surfactants include glycerol, trimethylolpropane, trimethylolethane, and ethoxylates and propoxylates of these compounds (e.g., propoxylated glycerol, ethoxylated glycerol Etc.), polyoxyethylene lauryl ether, polyoxyethylene Stearyl ether, polyoxyethyl oleyl ether, polyoxyethyl octylphenyl ether, polyoxyethyl nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol Distearate, sorbitan fatty acid ester (Pluronic L10, BASF), Pluronic L31, Pluronic L61, Pluronic L62, Pronick (Pluronic) 10R5, Pluronic 17R2, Pluronic 25R2, Tetronic 304, Tetronic 701, Tetronic 704, Tetronic 901 , Tetronic 904, Tetronic 150R1, Solsperse 20000 (manufactured by Lubrizol Japan).

陽離子系界面活性劑可列舉:酞菁衍生物(商品名:EFKA-745,森下產業(股)製造),有機矽氧烷聚合物KP341(信越化學工業(股)製造),(甲基)丙烯酸系(共)聚合物寶理弗洛(Polyflow)No.75、寶理弗洛(Polyflow)No.90、寶理弗洛(Polyflow)No.95(共榮社化學(股)製造),W001(裕商(股)製造)等。 Examples of the cationic surfactant include a phthalocyanine derivative (trade name: EFKA-745, manufactured by Morishita Industries, Ltd.), an organosiloxane polymer KP341 (made by Shin-Etsu Chemical Industry Co., Ltd.), and (meth) acrylic acid Department of (co) polymer Polyflow No. 75, Polyflow No. 90, Polyflow No. 95 (manufactured by Kyoeisha Chemical Co., Ltd.), W001 (Manufactured by Yushang)

陰離子系界面活性劑可列舉:W004、W005、W017(裕商(股)公司製造)等。 Examples of the anionic surfactant include W004, W005, and W017 (manufactured by Yushang Co., Ltd.).

矽酮系界面活性劑例如可列舉:東麗道康寧(Toray-Dow corning)(股)製造的「東麗矽酮(Toray Silicone)DC3PA」、「東麗矽酮(Toray Silicone)SH7PA」、「東麗矽酮(Toray Silicone)DC11PA」、「東麗矽酮(Toray Silicone)SH21PA」、「東麗矽酮(Toray Silicone)SH28PA」、「東麗矽酮(Toray Silicone)SH29PA」、「東麗矽酮(Toray Silicone)SH30PA」、「東麗矽酮(Toray Silicone)SH8400」,邁圖高新材料(Momentive Performance Materials)公司製造的「TSF-4440」、「TSF-4300」、「TSF-4445」、「TSF-4460」、「TSF-4452」,信越矽酮股份有限公司製造的「KP341」、「KF6001」、「KF6002」,日本畢克(BYK Chemie)公司製造的「BYK307」、「BYK323」、「BYK330」等。 Examples of the silicone-based surfactant include: "Toray Silicone DC3PA", "Toray Silicone SH7PA", "Toray Silicone" manufactured by Toray-Dow corning Co., Ltd. Toray Silicone DC11PA "," Toray Silicone SH21PA "," Toray Silicone Silicone SH28PA "," Toray Silicone SH29PA "," Toray Silicone SH30PA "," Toray Silicone SH8400 ", Momentive Performance Materials "TSF-4440", "TSF-4300", "TSF-4445", "TSF-4460", "TSF-4452" manufactured by the company, "KP341", "KF6001", " "KF6002", "BYK307", "BYK323", "BYK330", etc. manufactured by BYK Chemie Japan.

於接著區域含有界面活性劑的情形時,相對於接著區域的總固體成分,界面活性劑的含量較佳為0.001質量%~1質量%,更佳為0.01質量%~0.5質量%,尤佳為0.05質量%~0.1質量%。 When a surfactant is contained in the adjoining region, the content of the surfactant is preferably 0.001% by mass to 1% by mass, more preferably 0.01% by mass to 0.5% by mass, and even more preferably, relative to the total solid content of the adjoining region. 0.05% by mass to 0.1% by mass.

另外,暫時接著膜較佳為相對於暫時接著膜的總固體成分量(除了溶劑以外的量)而含有0.001質量%~1質量%的界面活性劑,更佳為0.01質量%~0.5質量%,尤佳為0.05質量%~0.1質量%。 In addition, the temporary bonding film preferably contains 0.001% by mass to 1% by mass of the surfactant, more preferably 0.01% by mass to 0.5% by mass, relative to the total solid content (amount other than the solvent) of the temporary bonding film. It is particularly preferably from 0.05% by mass to 0.1% by mass.

界面活性劑可僅為一種,亦可為兩種以上。於界面活性劑為兩種以上的情形時,較佳為其合計為所述範圍。 The surfactant may be only one kind, or two or more kinds. When there are two or more kinds of surfactants, it is preferable that the total thereof is within the above range.

<<<抗氧化劑>>> <<< Antioxidant >>>

本發明的暫時接著膜的接著區域就防止由加熱時的氧化所致的接著區域的低分子化或凝膠化的觀點而言,亦可含有抗氧化劑。抗氧化劑可使用酚系抗氧化劑、硫系抗氧化劑、醌系抗氧化劑、氮系抗氧化劑等。 The bonding region of the temporary bonding film of the present invention may contain an antioxidant from the viewpoint of preventing the low-molecularization or gelation of the bonding region caused by oxidation during heating. Examples of the antioxidant include phenol-based antioxidants, sulfur-based antioxidants, quinone-based antioxidants, and nitrogen-based antioxidants.

酚系抗氧化劑例如可列舉:對甲氧基苯酚、2,6-二-第三丁基 -4-甲基苯酚,巴斯夫(BASF)(股)製造的「易璐諾斯(Irganox)1010」、「易璐諾斯(Irganox)1330」、「易璐諾斯(Irganox)3114」、「易璐諾斯(Irganox)1035」,住友化學(股)製造的「蘇米萊澤(Sumilizer)MDP-S」、「蘇米萊澤(Sumilizer)GA-80」等。 Examples of the phenol-based antioxidant include p-methoxyphenol and 2,6-di-third-butyl -4-methylphenol, "Irganox 1010", "Irganox 1330", "Irganox 3114", "manufactured by BASF" "Irganox 1035", "Sumilizer MDP-S", "Sumilizer GA-80", etc. manufactured by Sumitomo Chemical Co., Ltd.

硫系抗氧化劑例如可列舉:3,3'-硫代二丙酸酯二硬脂酯,住友化學(股)製造的「蘇米萊澤(Sumilizer)TPM」、「蘇米萊澤(Sumilizer)TPS」、「蘇米萊澤(Sumilizer)TP-D」等。 Examples of the sulfur-based antioxidant include 3,3'-thiodipropionate distearate, "Sumilizer TPM" manufactured by Sumitomo Chemical Co., Ltd., and "Sumilizer" TPS "," Sumilizer TP-D ", etc.

醌系抗氧化劑例如可列舉對苯醌、2-第三丁基-1,4-苯醌等。 Examples of the quinone-based antioxidant include p-benzoquinone and 2-tert-butyl-1,4-benzoquinone.

胺系抗氧化劑例如可列舉二甲基苯胺或啡噻嗪等。 Examples of the amine-based antioxidant include dimethylaniline and phenothiazine.

抗氧化劑較佳為易璐諾斯(Irganox)1010、易璐諾斯(Irganox)1330、3,3'-硫代二丙酸酯二硬脂酯,更佳為易璐諾斯(Irganox)1010、易璐諾斯(Irganox)1330,尤佳為易璐諾斯(Irganox)1010。 The antioxidant is preferably Irganox 1010, Irganox 1330, 3,3'-thiodipropionate distearate, and more preferably Irganox 1010 1, Irganox (1330), especially preferably Irganox (1010).

就防止加熱過程中的昇華的觀點而言,抗氧化劑的分子量較佳為400以上,更佳為600以上,尤佳為750以上。 From the viewpoint of preventing sublimation during heating, the molecular weight of the antioxidant is preferably 400 or more, more preferably 600 or more, and even more preferably 750 or more.

於接著區域含有抗氧化劑的情形時,相對於接著區域的總固體成分,抗氧化劑的含量較佳為0.001質量%~10質量%,更佳為0.01質量%~5質量%,尤佳為0.1質量%~1質量%。 In the case where the next region contains an antioxidant, the content of the antioxidant is preferably 0.001% to 10% by mass, more preferably 0.01% to 5% by mass, and even more preferably 0.1% relative to the total solid content of the next region. % ~ 1% by mass.

另外,暫時接著膜較佳為相對於暫時接著膜的總固體成分量(除了溶劑以外的量)而含有0.001質量%~10質量%的抗氧化劑,更佳為0.01質量%~5質量%,尤佳為0.1質量%~1質量%。 In addition, the temporary bonding film preferably contains 0.001% by mass to 10% by mass of the antioxidant relative to the total solid content (amount other than the solvent) of the temporary bonding film, more preferably 0.01% by mass to 5% by mass, particularly It is preferably 0.1% by mass to 1% by mass.

抗氧化劑可僅為一種,亦可為兩種以上。於抗氧化劑為兩種以上的情形時,較佳為其合計為所述範圍。 The antioxidant may be only one kind, or two or more kinds. When there are two or more antioxidants, it is preferable that the total thereof is within the above range.

<<脫模區域>> << Release area >>

本發明的暫時接著膜於接著區域的表面上具有脫模區域。脫模區域是以如下目的而使用:調整元件晶圓與接著區域的接著力,容易將暫時接著膜自元件晶圓上剝離。 The temporary bonding film of the present invention has a release region on the surface of the bonding region. The demolding region is used for the purpose of adjusting the bonding force between the element wafer and the bonding region to easily peel the temporary bonding film from the element wafer.

脫模區域的平均厚度較佳為0.001μm~1μm,更佳為0.01μm~0.5μm。若為所述範圍,則暫時接著膜具有適度的接著力,與元件晶圓的接著性良好,並且可將暫時接著膜自元件晶圓上容易地剝離。 The average thickness of the demolding region is preferably 0.001 μm to 1 μm, and more preferably 0.01 μm to 0.5 μm. Within this range, the temporary adhesive film has a moderate adhesive force and good adhesion to the element wafer, and the temporary adhesive film can be easily peeled from the element wafer.

於本發明的暫時接著膜包含在形成接著區域的層的表層上積層有形成脫模區域的層而構成的積層結構的情形時,形成脫模區域的層的平均厚度較佳為0.001μm~1μm,更佳為0.01μm~0.5μm。 In the case where the temporary adhesive film of the present invention includes a laminated structure in which a layer forming a release region is laminated on a surface layer of a layer forming the adhesive region, the average thickness of the layer forming the release region is preferably 0.001 μm to 1 μm. , More preferably 0.01 μm to 0.5 μm.

於本發明的暫時接著膜為在暫時接著層中脫模成分偏向存在於表層而形成脫模區域的態樣的情形時,脫模區域的平均厚度較佳為0.001μm~1μm,更佳為0.01μm~0.5μm。另外,於該情形時,接著區域的平均厚度與脫模區域的平均厚度之比率較佳為接著區域的平均厚度/脫模區域的平均厚度=10~1000,更佳為50~500。 In the case where the temporary adhesive film of the present invention is in a state where the release component in the temporary adhesive layer is biased to exist on the surface layer to form a release region, the average thickness of the release region is preferably 0.001 μm to 1 μm, and more preferably 0.01. μm ~ 0.5μm. In this case, the ratio of the average thickness of the bonding region to the average thickness of the demolding region is preferably the average thickness of the bonding region / average thickness of the demolding region = 10 to 1000, and more preferably 50 to 500.

再者,本發明中,脫模區域的平均厚度是定義為藉由橢圓偏光法進行5點測定的點的平均值。 In addition, in this invention, the average thickness of a mold release area is defined as the average value of the five points measured by the ellipsometry.

本發明的暫時接著膜的脫模區域較佳為包括含有選自氟原子及矽原子中的至少一種的化合物,更佳為包括氟系矽烷偶 合劑。 The release region of the temporary adhesive film of the present invention preferably contains a compound containing at least one selected from the group consisting of a fluorine atom and a silicon atom, and more preferably a fluorine-based silane coupler. mixture.

脫模區域的氟含有率較佳為30質量%~80質量%,更佳為40質量%~76質量%,尤佳為60質量%~75質量%。氟含有率是以「{(一分子中的氟原子數×氟原子的質量)/一分子中的所有原子的質量}×100」而定義。 The fluorine content in the demolding region is preferably 30% by mass to 80% by mass, more preferably 40% by mass to 76% by mass, and even more preferably 60% by mass to 75% by mass. The fluorine content rate is defined by "{(the number of fluorine atoms in one molecule × the mass of fluorine atoms) / the mass of all atoms in one molecule} × 100".

另外,脫模區域較佳為相對於脫模區域的總固體成分而含有10質量%~100質量%的含有選自氟原子及矽原子中的至少一種的化合物,更佳為50質量%~100質量%。 In addition, the demolding region is preferably a compound containing at least one kind selected from a fluorine atom and a silicon atom with respect to the total solid content of the demolding region, and more preferably 50 mass% to 100 quality%.

另外,暫時接著膜中,相對於暫時接著膜的總固體成分,含有選自氟原子及矽原子中的至少一種的化合物較佳為10質量%~100質量%,更佳為50質量%~100質量%。 In addition, in the temporarily-adhered film, the compound containing at least one selected from a fluorine atom and a silicon atom with respect to the total solid content of the temporarily-adhered film is preferably 10% to 100% by mass, and more preferably 50% to 100% quality%.

本發明中,就耐熱性的觀點而言,脫模區域較佳為包括含有氟原子的三維交聯物。其中,較佳為含氟的多官能單體.寡聚物的三維交聯物、或含氟的矽烷偶合劑的三維交聯物,尤佳為含氟的矽烷偶合劑的三維交聯物。含氟的矽烷偶合劑較佳為對人體的危險性及金屬腐蝕性低的非鹵素系矽烷偶合劑,尤佳為含有氟的烷氧基矽烷。市售品可列舉大金(Daikin)工業股份有限公司製造的奧普茨(Optool)DAC-HP、奧普茨(Optool)DSX。再者,鹵素系矽烷偶合劑例如可列舉氟氯矽烷化合物等。 In the present invention, from the viewpoint of heat resistance, the release region preferably includes a three-dimensional crosslinked product containing a fluorine atom. Among them, a fluorine-containing polyfunctional monomer is preferred. The three-dimensional crosslinked product of the oligomer or the three-dimensional crosslinked product of the fluorine-containing silane coupling agent is particularly preferably the three-dimensional crosslinked product of the fluorine-containing silane coupling agent. The fluorine-containing silane coupling agent is preferably a non-halogen-based silane coupling agent having low danger to the human body and low corrosiveness to the metal, and particularly preferably a fluorine-containing alkoxysilane. Commercially available products include Optool DAC-HP and Optool DSX manufactured by Daikin Industrial Co., Ltd. Examples of the halogen-based silane coupling agent include fluorochlorosilane compounds.

本發明中,脫模區域可包括含有氟原子的非三維交聯結構的高分子化合物。 In the present invention, the release region may include a polymer compound having a non-three-dimensional crosslinked structure containing fluorine atoms.

所謂非三維交聯結構,是指於化合物中不含交聯結構、或形 成三維交聯結構的交聯結構相對於化合物中的所有交聯結構之比例為5%以下,較佳為1%以下。較佳為實質上含有非三維交聯結構。 The so-called non-three-dimensional cross-linked structure means that the compound does not contain a cross-linked structure or a shape. The ratio of the cross-linked structure forming a three-dimensional cross-linked structure to all the cross-linked structures in the compound is 5% or less, preferably 1% or less. It is preferable to contain a non-three-dimensional crosslinked structure substantially.

含氟原子的非三維交聯結構的高分子化合物可較佳地使用包含一種或兩種以上的含氟單官能單體的聚合物。更具體可列舉選自以下化合物中的至少一種含氟樹脂等:選自四氟乙烯、六氟丙烯、氧化四氟乙烯、氧化六氟丙烯、全氟烷基乙烯基醚、氯三氟乙烯、偏二氟乙烯、含全氟烷基的(甲基)丙烯酸酯中的一種或兩種以上的含氟單官能單體的均聚物或該些單體的共聚物,一種或兩種以上的含氟單官能單體與乙烯的共聚物,一種或兩種以上的含氟單官能單體與氯三氟乙烯的共聚物。 As the polymer compound having a fluorine atom-containing non-three-dimensional cross-linked structure, a polymer containing one or two or more fluorine-containing monofunctional monomers can be preferably used. More specific examples include at least one fluorine-containing resin selected from the group consisting of tetrafluoroethylene, hexafluoropropylene, tetrafluoroethylene oxide, hexafluoropropylene oxide, perfluoroalkyl vinyl ether, chlorotrifluoroethylene, Homopolymer or copolymer of one or more fluorine-containing monofunctional monomers of vinylidene fluoride, perfluoroalkyl group-containing (meth) acrylate, or one or two or more of them A copolymer of a fluorine-containing monofunctional monomer and ethylene, and a copolymer of one or two or more fluorine-containing monofunctional monomers and chlorotrifluoroethylene.

非三維交聯結構的含氟原子的高分子化合物較佳為可由含全氟烷基的(甲基)丙烯酸酯所合成的含全氟烷基的(甲基)丙烯酸系樹脂。 The fluorine atom-containing polymer compound having a non-three-dimensional crosslinked structure is preferably a perfluoroalkyl group-containing (meth) acrylic resin synthesized from a perfluoroalkyl group-containing (meth) acrylate.

具體而言,含全氟烷基的(甲基)丙烯酸酯較佳為下述式(101)所表示的化合物。 Specifically, the (meth) acrylate containing a perfluoroalkyl group is preferably a compound represented by the following formula (101).

通式(101)中,R101、R102、R103分別獨立地表示氫原子、烷基或鹵素原子。Y101表示單鍵或選自由-CO-、-O-、-NH-、二價脂肪族基、二價芳香族基及該些基團的組合所組成的組群中的二價連結基。Rf為氟原子或具有至少一個氟原子的一價有機基。 In the general formula (101), R 101 , R 102 , and R 103 each independently represent a hydrogen atom, an alkyl group, or a halogen atom. Y 101 represents a single bond or a divalent linking group selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and a combination of these groups. Rf is a fluorine atom or a monovalent organic group having at least one fluorine atom.

通式(101)中,R101、R102、R103所表示的烷基的例子較佳為碳數1~8的烷基,例如可列舉:甲基、乙基、丙基、辛基、異丙基、第三丁基、異戊基、2-乙基己基、2-甲基己基、環戊基等。芳基的例子較佳為碳數6~12的芳基,可列舉苯基、1-萘基、2-萘基等。其中,R101~R103較佳為氫原子或甲基。 Examples of the alkyl group represented by R 101 , R 102 , and R 103 in the general formula (101) are preferably an alkyl group having 1 to 8 carbon atoms, and examples thereof include methyl, ethyl, propyl, octyl, Isopropyl, third butyl, isopentyl, 2-ethylhexyl, 2-methylhexyl, cyclopentyl and the like. Examples of the aryl group are preferably an aryl group having 6 to 12 carbon atoms, and examples thereof include a phenyl group, a 1-naphthyl group, and a 2-naphthyl group. Among them, R 101 to R 103 are preferably a hydrogen atom or a methyl group.

Y101表示單鍵或選自由-CO-、-O-、-NH-、二價脂肪族基、二價芳香族基及該些基團的組合所組成的組群中的二價連結基,對於二價脂肪族基而言,鏈狀結構優於環狀結構,進而直鏈狀結構優於具有分支的鏈狀結構。二價脂肪族基的碳原子數較佳為1~20,更佳為1~15,進而佳為1~12,進而較佳為1~10,進而更佳為1~8,尤佳為1~4。 Y 101 represents a single bond or a divalent linking group selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and a combination of these groups, For a divalent aliphatic group, a chain structure is better than a cyclic structure, and a linear structure is better than a branched chain structure. The number of carbon atoms of the divalent aliphatic group is preferably from 1 to 20, more preferably from 1 to 15, even more preferably from 1 to 12, even more preferably from 1 to 10, even more preferably from 1 to 8, and even more preferably 1 ~ 4.

二價芳香族基的例子可列舉伸苯基、經取代的伸苯基、萘基及經取代的萘基,較佳為伸苯基。 Examples of the divalent aromatic group include phenylene, substituted phenylene, naphthyl, and substituted naphthyl, and phenylene is preferred.

Y101較佳為二價的直鏈狀結構的脂肪族基。 Y 101 is preferably an aliphatic group having a divalent linear structure.

Rf所表示的具有氟原子的一價有機基並無特別限定,較佳為碳數1~30的含氟烷基,更佳為碳數1~20,尤佳為碳數1~15的含氟烷基。該含氟烷基可為直鏈{例如-CF2CF3、 -CH2(CF2)4H、-CH2(CF2)8CF3、-CH2CH2(CF2)4H等},亦可具有分支結構{例如-CH(CF3)2、-CH2CF(CF3)2、-CH(CH3)CF2CF3、-CH(CH3)(CF2)5CF2H等},另外亦可具有脂環式結構(較佳為5員環或6員環,例如全氟環己基、全氟環戊基或經該些基團取代的烷基等),亦可含有醚鍵(例如-CH2OCH2CF2CF3、-CH2CH2OCH2C4F8H、-CH2CH2OCH2CH2C8F17、-CH2CF2OCF2CF2OCF2CF2H等)。另外,亦可為全氟烷基。 The monovalent organic group having a fluorine atom represented by Rf is not particularly limited, but is preferably a fluorine-containing alkyl group having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and even more preferably 1 to 15 carbon atoms. Fluoroalkyl. The fluorine-containing alkyl group may be a straight chain {for example, -CF 2 CF 3 , -CH 2 (CF 2 ) 4 H, -CH 2 (CF 2 ) 8 CF 3 , -CH 2 CH 2 (CF 2 ) 4 H, etc. } And may have a branch structure {for example, -CH (CF 3 ) 2 , -CH 2 CF (CF 3 ) 2 , -CH (CH 3 ) CF 2 CF 3 , -CH (CH 3 ) (CF 2 ) 5 CF 2 H, etc.}, may also have an alicyclic structure (preferably a 5-membered ring or a 6-membered ring, such as perfluorocyclohexyl, perfluorocyclopentyl, or alkyl substituted with these groups, etc.), also May contain ether bonds (e.g. -CH 2 OCH 2 CF 2 CF 3 , -CH 2 CH 2 OCH 2 C 4 F 8 H, -CH 2 CH 2 OCH 2 CH 2 C 8 F 17 , -CH 2 CF 2 OCF 2 CF 2 OCF 2 CF 2 H, etc.). Alternatively, it may be a perfluoroalkyl group.

含全氟烷基的(甲基)丙烯酸系樹脂具體而言含有下述式(102)所表示的重複單元。 The (fluoro) acrylic resin containing a perfluoroalkyl group specifically contains a repeating unit represented by the following formula (102).

通式(102)中,R101、R102、R103、Y101、Rf分別與通式(101)為相同含意,較佳態樣亦為相同含意。 In the general formula (102), R 101 , R 102 , R 103 , Y 101 , and Rf have the same meanings as those in the general formula (101), and preferred embodiments also have the same meanings.

含全氟烷基的(甲基)丙烯酸系樹脂就剝離性的觀點而言,除了含全氟烷基的(甲基)丙烯酸酯以外,可任意地選擇共聚合成分。可形成共聚合成分的自由基聚合性化合物例如可列舉:選自丙烯酸酯類、甲基丙烯酸酯類、N,N-二取代丙烯醯胺類、N,N- 二取代甲基丙烯醯胺類、苯乙烯類、丙烯腈類、甲基丙烯腈類等中的自由基聚合性化合物。 The (meth) acrylic resin containing a perfluoroalkyl group can select a copolymerization component other than the (meth) acrylate containing a perfluoroalkyl group from the viewpoint of releasability. Examples of the radical polymerizable compound capable of forming a copolymerization component are selected from the group consisting of acrylates, methacrylates, N, N-disubstituted acrylamides, and N, N- Radical polymerizable compounds among disubstituted methacrylamide, styrene, acrylonitrile, and methacrylonitrile.

更具體而言,例如可列舉:丙烯酸烷基酯(烷基的碳原子數較佳為1~20)等丙烯酸酯類(例如丙烯酸甲酯、丙烯酸乙酯、丙烯酸丙酯、丙烯酸丁酯、丙烯酸戊酯、丙烯酸乙基己酯、丙烯酸辛酯、丙烯酸-第三辛酯、丙烯酸氯乙酯、丙烯酸-2,2-二甲基羥基丙酯、丙烯酸-5-羥基戊酯、三羥甲基丙烷單丙烯酸酯、季戊四醇單丙烯酸酯、丙烯酸縮水甘油酯、丙烯酸苄酯、丙烯酸甲氧基苄酯、丙烯酸糠酯、丙烯酸四氫糠酯等),丙烯酸芳酯(例如丙烯酸苯酯等),甲基丙烯酸烷基酯(烷基的碳原子數較佳為1~20)等甲基丙烯酸酯類(例如甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸丙酯、甲基丙烯酸異丙酯、甲基丙烯酸戊酯、甲基丙烯酸己酯、甲基丙烯酸環己酯、甲基丙烯酸苄酯、甲基丙烯酸氯苄酯、甲基丙烯酸辛酯、甲基丙烯酸-4-羥基丁酯、甲基丙烯酸-5-羥基戊酯、甲基丙烯酸-2,2-二甲基-3-羥基丙酯、三羥甲基丙烷單甲基丙烯酸酯、季戊四醇單甲基丙烯酸酯、甲基丙烯酸縮水甘油酯、甲基丙烯酸糠酯、甲基丙烯酸四氫糠酯等),甲基丙烯酸芳酯(例如甲基丙烯酸苯酯、甲基丙烯酸甲苯酯、甲基丙烯酸萘酯等),苯乙烯、烷基苯乙烯等苯乙烯(例如甲基苯乙烯、二甲基苯乙烯、三甲基苯乙烯、乙基苯乙烯、二乙基苯乙烯、異丙基苯乙烯、丁基苯乙烯、己基苯乙烯、環己基苯乙烯、癸基苯乙烯、苄基苯乙烯、氯甲基苯乙烯、三氟甲基苯乙烯、乙氧基甲基苯乙烯、乙醯 氧基甲基苯乙烯等)、烷氧基苯乙烯(例如甲氧基苯乙烯、4-甲氧基-3-甲基苯乙烯、二甲氧基苯乙烯等),鹵素苯乙烯(例如氯苯乙烯、二氯苯乙烯、三氯苯乙烯、四氯苯乙烯、五氯苯乙烯、溴苯乙烯、二溴苯乙烯、碘苯乙烯、氟苯乙烯、三氟苯乙烯、2-溴-4-三氟甲基苯乙烯、4-氟-3-三氟甲基苯乙烯等),丙烯腈、甲基丙烯腈、丙烯酸、含有羧酸的自由基聚合性化合物(丙烯酸、甲基丙烯酸、衣康酸、丁烯酸、異丁烯酸、馬來酸、對羧基苯乙烯及該些酸基的金屬鹽、銨鹽化合物等),就剝離性的觀點而言,尤其較佳為具有碳數1~24的烴基的(甲基)丙烯酸酯,例如可列舉(甲基)丙烯酸的甲酯、丁酯、2-乙基己酯、月桂酯、硬脂酯、縮水甘油酯等,較佳為2-乙基己酯、月桂酯、硬脂酯等高級醇的(甲基)丙烯酸酯,尤其較佳為丙烯酸酯。 More specifically, for example, acrylates (e.g., methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, acrylic acid) such as alkyl acrylate (the number of carbon atoms of the alkyl group is preferably 1 to 20) can be cited. Amyl ester, ethylhexyl acrylate, octyl acrylate, tertiary octyl acrylate, chloroethyl acrylate, -2,2-dimethylhydroxypropyl acrylate, 5-hydroxypentyl acrylate, trimethylol Propane monoacrylate, pentaerythritol monoacrylate, glycidyl acrylate, benzyl acrylate, methoxybenzyl acrylate, furfuryl acrylate, tetrahydrofurfuryl acrylate, etc.), aryl acrylate (eg, phenyl acrylate, etc.), Methacrylic acid alkyl esters (the number of carbon atoms of the alkyl group is preferably 1 to 20) and other methacrylic acid esters (e.g. methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate) Ester, amyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate, benzyl methacrylate, chlorobenzyl methacrylate, octyl methacrylate, 4-hydroxybutyl methacrylate, 5-hydroxypentyl methacrylate, methyl Enoic acid-2,2-dimethyl-3-hydroxypropyl ester, trimethylolpropane monomethacrylate, pentaerythritol monomethacrylate, glycidyl methacrylate, furfuryl methacrylate, methyl Tetrahydrofurfuryl acrylate, etc.), aryl methacrylates (such as phenyl methacrylate, toluene methacrylate, naphthyl methacrylate, etc.), styrenes such as styrene, alkylstyrene (such as methylbenzene Ethylene, dimethylstyrene, trimethylstyrene, ethylstyrene, diethylstyrene, isopropylstyrene, butylstyrene, hexylstyrene, cyclohexylstyrene, decylstyrene, Benzylstyrene, chloromethylstyrene, trifluoromethylstyrene, ethoxymethylstyrene, acetamidine Oxymethylstyrene, etc.), alkoxystyrene (such as methoxystyrene, 4-methoxy-3-methylstyrene, dimethoxystyrene, etc.), halogen styrene (such as chlorine Styrene, dichlorostyrene, trichlorostyrene, tetrachlorostyrene, pentachlorostyrene, bromostyrene, dibromostyrene, iodostyrene, fluorostyrene, trifluorostyrene, 2-bromo-4 -Trifluoromethylstyrene, 4-fluoro-3-trifluoromethylstyrene, etc.), acrylonitrile, methacrylonitrile, acrylic acid, radical polymerizable compounds containing carboxylic acid (acrylic acid, methacrylic acid, clothing Conic acid, butenoic acid, methacrylic acid, maleic acid, p-carboxystyrene, and metal salts of these acid groups, ammonium salt compounds, etc.), from the standpoint of releasability, it is particularly preferred to have a carbon number of 1 to Examples of the (meth) acrylic acid ester of the hydrocarbon group of 24 include methyl (meth) acrylic acid, butyl ester, 2-ethylhexyl ester, lauryl ester, stearyl ester, and glycidyl ester. The (meth) acrylate of a higher alcohol such as ethylhexyl, lauryl, and stearyl is particularly preferably an acrylate.

上文所述的具有氟原子的非三維交聯結構的高分子化合物亦可使用市售品。例如可列舉:鐵氟龍(Teflon,註冊商標)(杜邦(Dupont)公司)、特富贊(Tefzel)(杜邦(Dupont)公司)、氟路昂(Fluon)(旭硝子公司)、哈拉(Halar)(索維索萊克西斯(Solvay Solexis)公司)、海拉(Hylar)(索維索萊克西斯(Solvay Solexis)公司)、魯米氟龍(Lumiflon)(旭硝子公司)、阿弗拉斯(Aflas)(旭硝子公司)、賽托普(Cytop)(旭硝子公司)、賽弗拉爾索芙特(Cefral Soft)(中央硝子(Central Glass)公司)、賽弗拉爾扣特(Cefral Coat)(中央硝子(Central Glass)公司)、戴傲寧(Daionin)(3M公司)等氟樹脂,威登(Vuitton)(杜邦(Dupont) 公司)、卡爾萊茨(Kalrez)(杜邦(Dupont)公司)、斯菲爾(SIFEL)(信越化學工業公司)等商標名的氟橡膠,以克萊托克斯(Krytox)(杜邦(Dupont)公司)、佛布林(Fomblin)(大德科技(Daitokutech)公司)、德納姆(Demnum)(大金(Daikin)工業公司)等的全氟聚醚油為代表的各種氟油,或代付利(Daifree)FB系列(大金(Daikin)工業公司)、美佳法(Megafac)系列(迪愛生(DIC)公司)等商標名的含氟脫模劑等。 As the polymer compound having a non-three-dimensional crosslinked structure having a fluorine atom as described above, a commercially available product can also be used. Examples include: Teflon (registered trademark) (Dupont), Tefzel (Dupont), Fluon (Asahi Glass), Halar ) (Solvay Solexis), Hylar (Solvay Solexis), Lumiflon (Asahi Glass), Afras (Aflas) (Asahi Glass Company), Cytop (Asahi Glass Company), Cefral Soft (Central Glass Company), Cefral Coat (Central Glass), Daionin (3M) and other fluororesins, Vuitton (Dupont) Company), Kalrez (Dupont), SIFEL (Shin-Etsu Chemical Industry Co., Ltd.), and other fluororubbers with Krytox (Dupont) Companies), Fomblin (Daitokutech), Demnum (Daikin Industrial Company) and other perfluoropolyether oils as representative Fluorine-containing release agents such as Daifree FB series (Daikin Industries), Megafac series (DIC) and other brand names.

具有氟原子的非三維交聯結構的高分子化合物的由凝膠滲透層析(GPC)法所得的聚苯乙烯換算的重量平均分子量較佳為100000~2000,更佳為50000~2000,最佳為10000~2000。 The polystyrene-equivalent weight average molecular weight of a polymer compound having a non-three-dimensional crosslinked structure having a fluorine atom by a gel permeation chromatography (GPC) method is preferably 100,000 to 2,000, more preferably 50,000 to 2,000, and most preferably It is 10000 ~ 2000.

關於脫模區域的具有氟原子的非三維交聯結構的高分子化合物的含量,就良好的剝離性的觀點而言,相對於脫模區域的總固體成分,較佳為1質量%~99質量%,更佳為3質量%~95質量%,進而佳為5質量%~90質量%。 The content of the polymer compound having a non-three-dimensional crosslinked structure having a fluorine atom in the release region is preferably 1% to 99% by mass with respect to the total solid content in the release region from the viewpoint of good peelability. %, More preferably 3% to 95% by mass, and even more preferably 5% to 90% by mass.

脫模區域的含氟原子的三維交聯物與具有氟原子的非三維交聯結構的高分子化合物之比(質量比)較佳為5:95~50:50,更佳為10:90~40:60,進而佳為15:85~30:70。 The ratio (mass ratio) of the fluorine atom-containing three-dimensional crosslinked product to the non-three-dimensional crosslinked polymer compound having a fluorine atom in the demolding region is preferably 5:95 to 50:50, and more preferably 10:90 to 40:60, further preferably 15: 85 ~ 30: 70.

具有氟原子的非三維交聯結構的高分子化合物可僅為一種,亦可為兩種以上。於為兩種以上的情形時,較佳為其合計為所述範圍。 The polymer compound having a non-three-dimensional crosslinked structure of a fluorine atom may be only one kind, or two or more kinds. When there are two or more cases, it is preferable that the total thereof is within the above range.

<暫時接著用組成物> <Composition for temporary use>

繼而,對本發明的暫時接著用組成物加以說明。 Next, the composition of the present invention will be described temporarily.

本發明的暫時接著用組成物包括含有雜環的樹脂、含50質量%~100質量%的馬來醯亞胺樹脂的交聯成分及溶劑,其中所述含雜環的樹脂包含選自聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚苯并咪唑樹脂及聚苯并噁唑樹脂中的至少一種。 The composition for temporary bonding of the present invention includes a heterocyclic-containing resin, a cross-linking component containing 50% by mass to 100% by mass of a maleimide resin, and a solvent, wherein the heterocyclic-containing resin includes a member selected from polyfluorene At least one of an imine resin, a polyfluorene imine resin, a polybenzimidazole resin, and a polybenzoxazole resin.

藉由使用本發明的暫時接著用組成物,可形成上文所述的本發明的暫時接著膜的接著區域。 By using the temporary bonding composition of the present invention, the bonding region of the temporary bonding film of the present invention described above can be formed.

<<含雜環的樹脂>> << Heterocyclic resin >>

含雜環的樹脂可使用選自聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚苯并咪唑樹脂及聚苯并噁唑樹脂中的一種以上。該些樹脂的具體例可較佳地使用接著區域的項中記載的樹脂。其中,較佳為聚醯亞胺樹脂。另外,聚醯亞胺樹脂較佳為對選自γ-丁內酯、環戊酮、N-甲基吡咯啶酮、環己酮、二醇醚、二甲基亞碸及四甲基脲中的一種以上的溶劑的25℃下的溶解度為10g/100g溶劑(Solvent)以上的聚醯亞胺樹脂。 As the heterocyclic-containing resin, one or more members selected from the group consisting of a polyimide resin, a polyimide resin, a polybenzimidazole resin, and a polybenzoxazole resin can be used. As specific examples of these resins, the resins described in the section of the next region can be preferably used. Among these, polyimide resin is preferable. In addition, the polyfluorene imine resin is preferably selected from the group consisting of γ-butyrolactone, cyclopentanone, N-methylpyrrolidone, cyclohexanone, glycol ethers, dimethylimide, and tetramethylurea. Polyimide resin having a solubility at 25 ° C. of one or more solvents of 10 g / 100 g of a solvent (Solvent) or more.

相對於暫時接著用組成物的總固體成分量(除了溶劑以外的量),含雜環的樹脂的含量較佳為1質量%~99質量%,更佳為10質量%~90質量%,尤佳為25質量%~75質量%。 The content of the heterocyclic-containing resin is preferably 1% to 99% by mass, and more preferably 10% to 90% by mass, relative to the total solid content (amount other than the solvent) of the composition to be temporarily used. It is preferably 25% to 75% by mass.

<<交聯成分>> << Crosslinking Ingredients >>

交聯成分可使用包含50質量%~100質量%的馬來醯亞胺樹脂的成分。 As the crosslinking component, a component containing 50% by mass to 100% by mass of a maleimide resin can be used.

此處,馬來醯亞胺樹脂較佳為雙馬來醯亞胺樹脂。馬來醯亞胺樹脂的具體例可較佳地使用接著區域的項中記載的馬來醯亞胺 樹脂。 Here, the maleimide imide resin is preferably a bismaleimide resin. As a specific example of the maleimide resin, the maleimide described in the item of the next region can be preferably used. Resin.

交聯成分中,馬來醯亞胺樹脂的含量較佳為所有交聯成分的80質量%~100質量%。最佳為交聯成分實質上僅由馬來醯亞胺樹脂所構成。再者,所謂實質上僅由馬來醯亞胺樹脂所構成,是指馬來醯亞胺樹脂以外的交聯成分的含量例如較佳為1質量%以下,更佳為0.5質量%以下,尤佳為0.1質量%以下。馬來醯亞胺樹脂以外的交聯成分可較佳地使用接著區域的其他交聯成分的項中記載的成分。 The content of the maleimide resin in the crosslinking component is preferably 80% to 100% by mass of all the crosslinking components. Most preferably, the crosslinking component consists essentially of a maleimide resin. The term “substantially only composed of maleimide resin” means that the content of cross-linking components other than maleimide resin is, for example, preferably 1% by mass or less, more preferably 0.5% by mass or less, especially It is preferably 0.1% by mass or less. As the cross-linking component other than the maleimide resin, the components described in the item of other cross-linking components in the bonding region can be preferably used.

相對於暫時接著用組成物的總固體成分量(除了溶劑以外的量),馬來醯亞胺樹脂的含量較佳為1質量%~99質量%,更佳為10質量%~90質量%,尤佳為25質量%~75質量%。 The content of the maleimide imide resin is preferably 1% to 99% by mass, and more preferably 10% to 90% by mass relative to the total solid content (amount other than the solvent) of the composition to be temporarily used. Especially preferred is 25% to 75% by mass.

<<溶劑>> << Solvent >>

溶劑可無限制地使用公知的溶劑。例如可較佳地列舉:乙酸乙酯、乙酸-正丁酯、乙酸異丁酯、甲酸戊酯、乙酸異戊酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、氧基乙酸烷基酯(例如氧基乙酸甲酯、氧基乙酸乙酯、氧基乙酸丁酯(例如甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等))、3-氧基丙酸烷基酯類(例如3-氧基丙酸甲酯、3-氧基丙酸乙酯等(例如3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等))、2-氧基丙酸烷基酯類(例如2-氧基丙酸甲酯、2-氧基丙酸乙酯、2-氧基丙酸丙酯等(例如2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、 2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯))、2-氧基-2-甲基丙酸甲酯及2-氧基-2-甲基丙酸乙酯(例如2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯等)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸甲酯、2-氧代丁酸乙酯、丙二醇單甲醚乙酸酯(Propylene glycol monomethyl ether acetate,PGMEA)(1-甲氧基-2-丙基乙酸酯)等酯類;二乙二醇二甲醚、四氫呋喃、乙二醇單甲醚、乙二醇單乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯等醚類;甲基戊基酮、甲基乙基酮、2-丁酮、環己酮、2-庚酮、3-庚酮、N-甲基-2-吡咯啶酮等酮類;甲苯、二甲苯、苯甲醚、均三甲苯、檸檬烯等芳香族烴類;N,N-二甲基乙醯胺等。 As the solvent, a known solvent can be used without limitation. For example, ethyl acetate, n-butyl acetate, isobutyl acetate, amyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyrate Esters, methyl lactate, ethyl lactate, alkyl oxyacetate (e.g. methyl oxyacetate, ethyl oxyacetate, butyl oxyacetate (e.g. methyl methoxyacetate, ethyl methoxyacetate) , Butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.)), alkyl 3-oxypropionates (e.g. methyl 3-oxypropionate, 3-oxypropionate, etc.) Ethyl propionate (e.g. methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.), Alkyl 2-oxypropionates (e.g. methyl 2-oxypropionate, ethyl 2-oxypropionate, propyl 2-oxypropionate, etc.) (e.g. methyl 2-methoxypropionate , Ethyl 2-methoxypropionate, Propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)), methyl 2-oxy-2-methylpropionate and 2-oxyl Ethyl-2-methylpropanoate (e.g. methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate, etc.), methyl pyruvate, pyruvate Ethyl acetate, propyl pyruvate, methyl ethyl acetate, ethyl acetate, methyl 2-oxobutanoate, ethyl 2-oxobutanoate, propylene glycol monomethyl ether acetate acetate, PGMEA) (1-methoxy-2-propyl acetate); diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellulose Agent acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, Ethers such as propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate; methylpentyl ketone, methyl ethyl ketone, 2-butanone, cyclohexanone, 2-heptanone, 3-heptanone, N -Ketones such as methyl-2-pyrrolidone; aromatic hydrocarbons such as toluene, xylene, anisole, mesitylene, limonene, etc. Class; N, N-dimethylacetamide and the like.

其中,較佳為苯甲醚、N-甲基-2-吡咯啶酮、N,N-二甲基乙醯胺、2-丁酮、甲基戊基酮、檸檬烯、均三甲苯、甲基乙基酮、PGMEA(1-甲氧基-2-丙基乙酸酯)等,更佳為N-甲基-2-吡咯啶酮、N,N-二甲基乙醯胺、甲基戊基酮、檸檬烯。 Among them, anisole, N-methyl-2-pyrrolidone, N, N-dimethylacetamide, 2-butanone, methylpentyl ketone, limonene, mesitylene, methyl Ethyl ketone, PGMEA (1-methoxy-2-propyl acetate), etc., more preferably N-methyl-2-pyrrolidone, N, N-dimethylacetamide, methylpentyl Ketone, limonene.

就改良塗佈面狀等觀點而言,該些溶劑亦較佳為將兩種以上混合的形態。 From the viewpoint of improving the coating surface, these solvents are also preferably in the form of a mixture of two or more.

關於溶劑的含量,較佳為以暫時接著用組成物的固體成分濃 度成為5質量%~60質量%的方式使用。 As for the content of the solvent, it is preferable to concentrate the solid content of the composition temporarily It is used so that the degree becomes 5 to 60% by mass.

溶劑可僅為一種,亦可為兩種以上。於溶劑為兩種以上的情形時,較佳為其合計為所述範圍。 The solvent may be only one kind, or two or more kinds. When there are two or more solvents, it is preferable that the total thereof is within the above range.

<<熱聚合起始劑>> << Thermal polymerization initiator >>

暫時接著用組成物較佳為更含有熱聚合起始劑。藉由含有熱聚合起始劑,可形成耐熱性、耐化學性更優異的暫時接著膜。熱聚合起始劑可較佳地使用接著區域的項中記載的熱聚合起始劑,較佳範圍亦相同。 The composition for temporary subsequent use preferably further contains a thermal polymerization initiator. By including a thermal polymerization initiator, a temporary adhesive film having more excellent heat resistance and chemical resistance can be formed. As the thermal polymerization initiator, the thermal polymerization initiator described in the item of the next region is preferably used, and the preferable range is also the same.

相對於暫時接著用組成物的總固體成分量(除了溶劑以外的量),熱聚合起始劑的含量較佳為0.001質量%~1質量%,更佳為0.01質量%~0.5質量%,尤佳為0.05質量%~0.1質量%。 The content of the thermal polymerization initiator is preferably 0.001% by mass to 1% by mass, and more preferably 0.01% by mass to 0.5% by mass, relative to the total solid content (amount other than the solvent) of the composition to be temporarily used. It is preferably from 0.05% by mass to 0.1% by mass.

<<脫模成分>> << Release component >>

暫時接著用組成物較佳為更含有脫模成分。藉由含有脫模成分,於將暫時接著用組成物以膜狀應用時,脫模成分偏向存在於表層,可形成脫模區域偏向存在於接著區域的表層上而成的暫時接著膜。 It is preferable that the composition for temporary adhesion further contains a mold release component. By containing the mold release component, when the composition for temporary bonding is applied in a film form, the mold release component is biased to exist on the surface layer, and a temporary bonding film in which the mold release region is biased to exist on the surface layer of the bonding area can be formed.

脫模成分較佳為含有選自氟原子及矽原子中的至少一種的材料。含有選自氟原子及矽原子中的至少一種的材料可列舉含有氟原子或矽原子的聚合性單體等。更佳為氟系矽烷偶合劑。 The mold release component is preferably a material containing at least one selected from a fluorine atom and a silicon atom. Examples of the material containing at least one selected from a fluorine atom and a silicon atom include a polymerizable monomer containing a fluorine atom or a silicon atom. More preferred is a fluorine-based silane coupling agent.

<<<含有氟原子或矽原子的聚合性單體>>> <<< Polymerizable monomer containing fluorine atom or silicon atom >>>

含有氟原子或矽原子的聚合性單體較佳為於一分子中含有一個以上的氟原子或矽原子的自由基聚合性單體或寡聚物,尤佳為 於一分子中含有兩個以上的氟原子的、具有通常被稱為全氟基的基團的聚合性單體。 The polymerizable monomer containing a fluorine atom or a silicon atom is preferably a radical polymerizable monomer or oligomer containing one or more fluorine atoms or silicon atoms in one molecule, particularly preferably A polymerizable monomer having two or more fluorine atoms in one molecule and having a group generally called a perfluoro group.

含有氟原子或矽原子的自由基聚合性單體或寡聚物具有自由基聚合性官能基,自由基聚合性官能基並無特別限制,較佳為具有不飽和基(乙烯性不飽和鍵基等)。 The radically polymerizable monomer or oligomer containing a fluorine atom or a silicon atom has a radically polymerizable functional group, and the radically polymerizable functional group is not particularly limited, but preferably has an unsaturated group (ethylenically unsaturated bond group) Wait).

含有氟原子或矽原子的自由基聚合性單體或寡聚物較佳為具有兩個以上的自由基聚合性官能基,藉此,於元件的製造製程中,可進一步提高經過高溫下的製程後的自元件晶圓上的剝離性。 It is preferred that the radical polymerizable monomer or oligomer containing a fluorine atom or a silicon atom has two or more radical polymerizable functional groups, thereby further improving the process under high temperature in the manufacturing process of the device. After the release from the component wafer.

<<<<含有氟原子的聚合性單體>>>> <<<< Polymer monomer containing fluorine atom >>>>

含有氟原子的聚合性單體可自公知的單體中選擇,較佳為具有聚合性基的單體,更佳為氟系矽烷偶合劑。聚合性基例如可列舉:具有羥基或可水解的基團的矽烷基(例如烷氧基矽烷基、醯氧基矽烷基等)、具有反應性不飽和雙鍵的基團((甲基)丙烯醯基、烯丙基、乙烯氧基等)、開環聚合反應性基(環氧基、氧雜環丁基、噁唑基等)、具有活性氫原子的基團(例如羥基、羧基、胺基、胺甲醯基、巰基、β-酮酯基、氫矽烷基、矽烷醇基等)、酸酐、可由親核劑取代的基團(活性鹵素原子、磺酸酯等)等。 The polymerizable monomer containing a fluorine atom can be selected from known monomers, and is preferably a monomer having a polymerizable group, and more preferably a fluorine-based silane coupling agent. Examples of the polymerizable group include a silyl group having a hydroxyl group or a hydrolyzable group (for example, an alkoxysilyl group, an alkoxysilyl group, etc.), and a group having a reactive unsaturated double bond ((meth) propylene). Fluorenyl, allyl, vinyloxy, etc.), ring-opening polymerization reactive groups (epoxy, oxetanyl, oxazolyl, etc.), groups with active hydrogen atoms (e.g. hydroxyl, carboxyl, amine, etc.) Groups, carbamoyl groups, mercapto groups, β-ketoester groups, hydrosilyl groups, silanol groups, etc.), acid anhydrides, groups (active halogen atoms, sulfonate esters, etc.) that can be substituted with nucleophiles.

含有氟原子的自由基聚合性單體較佳為以下的通式(1)所表示的化合物。 The fluorine atom-containing radical polymerizable monomer is preferably a compound represented by the following general formula (1).

通式(I):Rf{-L-Y}n General formula (I): Rf {-LY} n

(式中,Rf表示至少含有碳原子及氟原子、且可含有氧原子及氫原子中的任一個的鏈狀或環狀的n價基團,n表示2以上的整數。L表示單鍵或二價連結基。Y表示聚合性基) (In the formula, Rf represents a chain or cyclic n-valent group containing at least a carbon atom and a fluorine atom, and may contain any of an oxygen atom and a hydrogen atom, and n represents an integer of 2 or more. L represents a single bond or Divalent linking group. Y represents a polymerizable group)

所述通式(I)中,Y為聚合性基,例如較佳為具有羥基或可水解的基團的矽烷基(例如烷氧基矽烷基、醯氧基矽烷基等)、具有反應性不飽和雙鍵的基團((甲基)丙烯醯基、烯丙基、乙烯氧基等)、開環聚合反應性基(環氧基、氧雜環丁基、噁唑基等)、具有活性氫原子的基團(例如羥基、羧基、胺基、胺甲醯基、巰基、β-酮酯基、氫矽烷基、矽烷醇基等)、酸酐、可由親核劑取代的基團(活性鹵素原子、磺酸酯等)等。 In the general formula (I), Y is a polymerizable group, and for example, a silyl group having a hydroxyl group or a hydrolyzable group (for example, an alkoxysilyl group, a methoxysilyl group, etc.) is preferred, and Groups with saturated double bonds ((meth) acrylfluorenyl, allyl, vinyloxy, etc.), ring-opening polymerization reactive groups (epoxy, oxetanyl, oxazolyl, etc.), active Groups of hydrogen atoms (e.g. hydroxyl, carboxyl, amine, carbamoyl, mercapto, β-ketoester, hydrosilyl, silanol, etc.), acid anhydrides, groups that can be substituted by nucleophiles (active halogens Atom, sulfonate, etc.).

更佳為Y表示自由基聚合性基,進而佳為具有反應性不飽和雙鍵的基團。具體而言,Y較佳為下述通式(9)所表示的自由基聚合性官能基。 More preferably, Y represents a radical polymerizable group, and even more preferably a group having a reactive unsaturated double bond. Specifically, Y is preferably a radical polymerizable functional group represented by the following general formula (9).

(通式(9)中,R901~R903分別獨立地表示氫原子、烷基或芳基。點線表示與連結於L的基團的鍵結) (In the general formula (9), R 901 to R 903 each independently represent a hydrogen atom, an alkyl group, or an aryl group. A dotted line indicates a bond with a group connected to L)

烷基的例子較佳為碳數1~8的烷基,例如可列舉甲基、 乙基、丙基、辛基、異丙基、第三丁基、異戊基、2-乙基己基、2-甲基己基、環戊基等。芳基的例子較佳為碳數6~12的芳基,可列舉苯基、1-萘基、2-萘基等。其中,R901~R903較佳為氫原子或甲基。 Examples of the alkyl group are preferably an alkyl group having 1 to 8 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, an octyl group, an isopropyl group, a third butyl group, an isopentyl group, a 2-ethylhexyl group, 2-methylhexyl, cyclopentyl and the like. Examples of the aryl group are preferably an aryl group having 6 to 12 carbon atoms, and examples thereof include a phenyl group, a 1-naphthyl group, and a 2-naphthyl group. Among them, R 901 to R 903 are preferably a hydrogen atom or a methyl group.

L表示單鍵或二價連結基。二價連結基表示二價脂肪族基、二價芳香族基、-O-、-S-、-CO-、-N(R)-及將該些基團的兩種以上組合所得的二價連結基。其中,R表示氫原子或碳數1~5的烷基。 L represents a single bond or a divalent linking group. The divalent linking group represents a divalent aliphatic group, a divalent aromatic group, -O-, -S-, -CO-, -N (R)-, and a divalent obtained by combining two or more of these groups. Linker. Here, R represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.

於L具有伸烷基或伸芳基的情形時,伸烷基及伸芳基較佳為經鹵素原子取代,更佳為經氟原子取代。 When L has an alkylene group or an alkylene group, the alkylene group and the alkylene group are preferably substituted with a halogen atom, and more preferably substituted with a fluorine atom.

Rf表示至少含有碳原子及氟原子、且亦可含有氧原子及氫原子中的任一個的鏈狀或環狀的n價基團。Rf亦可為含有具有氟原子的重複單元的線狀或分支狀的高分子結構。 Rf represents a chain or cyclic n-valent group containing at least a carbon atom and a fluorine atom, and may also contain any of an oxygen atom and a hydrogen atom. Rf may be a linear or branched polymer structure containing a repeating unit having a fluorine atom.

此種含有氟原子的單體亦可較佳地使用日本專利特開2011-48358號公報的段落編號0019~段落編號0033中記載的化合物,將該些內容併入至本申請案說明書中。 As such a fluorine atom-containing monomer, the compounds described in paragraph number 0019 to paragraph number 0033 of Japanese Patent Laid-Open No. 2011-48358 can be preferably used, and these contents are incorporated into the specification of the present application.

另外,具有氟原子的自由基聚合性單體亦較佳為選自下述結構式(1)、結構式(2)、結構式(3)、結構式(4)及結構式(5)所表示的化合物中的至少一種。 In addition, the radical polymerizable monomer having a fluorine atom is also preferably selected from the group consisting of the following structural formula (1), structural formula (2), structural formula (3), structural formula (4), and structural formula (5) At least one of the compounds represented.

CH2=CR1COOR2Rf…結構式(1) CH 2 = CR 1 COOR 2 R f … Structural formula (1)

(結構式(1)中,R1表示氫原子或甲基。R2表示-CpH2p-、-C(CpH2p+1)H-、-CH2C(CpH2p+1)H-或-CH2CH2O-。Rf表示-CnF2n+1、-(CF2)nH、-CnF2n+1-CF3、-(CF2)pOCnH2nCiF2i+1、 -(CF2)pOCmH2mCiF2iH、-N(CpH2p+1)COCnF2n+1或-N(CpH2p+1)SO2CnF2n+1。其中,p表示1~10的整數,n表示1~16的整數,m表示0~10的整數,i表示0~16的整數) (In the structural formula (1), R 1 represents a hydrogen atom or a methyl group. R 2 represents -C p H 2p- , -C (C p H 2p + 1 ) H-, -CH 2 C (C p H 2p + 1 ) H- or -CH 2 CH 2 O-. R f represents -C n F 2n + 1 ,-(CF 2 ) n H, -C n F 2n + 1 -CF 3 ,-(CF 2 ) p OC n H 2n C i F 2i + 1 ,-(CF 2 ) p OC m H 2m C i F 2i H, -N (C p H 2p + 1 ) COC n F 2n + 1 or -N (C p H 2p +1 ) SO 2 C n F 2n + 1. Among them, p represents an integer from 1 to 10, n represents an integer from 1 to 16, m represents an integer from 0 to 10, and i represents an integer from 0 to 16)

CF2=CFORg…結構式(2) CF 2 = CFOR g … structural formula (2)

(結構式(2)中,Rg表示碳數1~20的氟烷基) (In the structural formula (2), R g represents a fluoroalkyl group having 1 to 20 carbon atoms)

CH2=CHRg…結構式(3) CH 2 = CHR g … Structural formula (3)

(結構式(3)中,Rg表示碳數1~20的氟烷基) (In the structural formula (3), R g represents a fluoroalkyl group having 1 to 20 carbon atoms)

CH2=CR3COOR5RjR6OCOCR4=CH2…結構式(4) CH 2 = CR 3 COOR 5 R j R 6 OCOCR 4 = CH 2 … Structural formula (4)

(結構式(4)中,R3及R4表示氫原子或甲基。R5及R6表示-CqH2q-、-C(CqH2q+1)H-、-CH2C(CqH2q+1)H-或-CH2CH2O-,Rj表示-CtF2t。q為1~10的整數,t為1~16的整數) (In the structural formula (4), R 3 and R 4 represent a hydrogen atom or a methyl group. R 5 and R 6 represent -C q H 2q- , -C (C q H 2q + 1 ) H-, -CH 2 C (C q H 2q + 1 ) H- or -CH 2 CH 2 O-, R j represents -C t F 2t. Q is an integer from 1 to 10, and t is an integer from 1 to 16)

CH2=CHR7COOCH2(CH2Rk)CHOCOCR8=CH2…結構式(5) CH 2 = CHR 7 COOCH 2 (CH 2 R k ) CHOCOCR 8 = CH 2 … Structural formula (5)

(結構式(5)中,R7及R8表示氫原子或甲基。Rk為-CyF2y+1。y為1~16的整數) (In structural formula (5), R 7 and R 8 represent a hydrogen atom or a methyl group. R k is -CyF 2y + 1. Y is an integer from 1 to 16)

結構式(1)所表示的單量體例如可列舉:CF3(CF2)5CH2CH2OCOCH=CH2、CF3CH2OCOCH=CH2、CF3(CF2)4CH2CH2OCOC(CH3)=CH2、C7F15CON(C2H5)CH2OCOC(CH3)=CH2、CF3(CF2)7SO2N(CH2)CH2CH2OCOCH=CH2、CF2(CF2)7SO2N(C3H7)CH2CH2OCOCH=CH2、C2F5SO2N(C3H7)CH2CH2OCOC(CH3)=CH2、 (CF3)2CF(CF2)6(CH2)3OCOCH=CH2、(CF3)2CF(CF2)10(CH2)3OCOC(CH3)=CH2、CF3(CF2)4CH(CH3)OCOC(CH3)=CH2、CF3CH2OCH2CH2OCOCH=CH2、C2F5(CH2CH2O)2CH2OCOCH=CH2、(CF3)2CFO(CH2)5OCOCH=CH2、CF3(CF2)4OCH2CH2OCOC(CH3)=CH2、C2F5CON(C2H5)CH2OCOCH=CH2、CF3(CF2)2CON(CH3)CH(CH3)CH2OCOCH=CH2、H(CF2)6C(C2H5)OCOC(CH3)=CH2、H(CF2)8CH2OCOCH=CH2、H(CF2)4CH2OCOCH=CH2、H(CF2)CH2OCOC(CH3)=CH2、CF3(CF2)7SO2N(CH3)CH2CH2OCOC(CH3)=CH2、CF3(CF2)7SO2N(CH3)(CH2)10OCOCH=CH2、C2F5SO2N(C2H5)CH2CH2OCOC(CH3)=CH2、CF3(CF2)7SO2N(CH3)(CH2)4OCOCH=CH2、C2F5SO2N(C2H5)C(C2H5)HCH2OCOCH=CH2等。該些單量體可單獨使用一種,亦可併用兩種以上。 Examples of the singular body represented by the structural formula (1) include CF 3 (CF 2 ) 5 CH 2 CH 2 OCOCH = CH 2 , CF 3 CH 2 OCOCH = CH 2 , CF 3 (CF 2 ) 4 CH 2 CH 2 OCOC (CH 3 ) = CH 2 , C 7 F 15 CON (C 2 H 5 ) CH 2 OCOC (CH 3 ) = CH 2 , CF 3 (CF 2 ) 7 SO 2 N (CH 2 ) CH 2 CH 2 OCOCH = CH 2 , CF 2 (CF 2 ) 7 SO 2 N (C 3 H 7 ) CH 2 CH 2 OCOCH = CH 2 , C 2 F 5 SO 2 N (C 3 H 7 ) CH 2 CH 2 OCOC (CH 3 ) = CH 2 , (CF 3 ) 2CF (CF2) 6 (CH2) 3OCOCH = CH2, (CF 3 ) 2CF (CF2) 10 (CH2) 3OCOC (CH3) = CH2, CF 3 (CF2) 4CH (CH3) OCOC (CH3) = CH2, CF 3 CH 2 OCH 2 CH 2 OCOCH = CH 2 , C 2 F 5 (CH2CH2O) 2CH2OCOCH = CH2, (CF 3 ) 2 CFO (CH2) 5OCOCH = CH2, CF 3 (CF 2 ) 4 OCH 2 CH 2 OCOC (CH 3 ) = CH 2 , C 2 F 5 CON (C 2 H 5 ) CH 2 OCOCH = CH 2 , CF 3 (CF 2 ) 2 CON (CH 3 ) CH (CH 3 ) CH 2 OCOCH = CH 2 , H (CF 2 ) 6 C (C 2 H 5 ) OCOC (CH 3 ) = CH 2 , H (CF 2 ) 8 CH 2 OCOCH = CH 2 , H (CF 2 ) 4 CH 2 OCOCH = CH 2 , H (CF 2 ) CH 2 OCOC (CH 3 ) = CH 2 , CF 3 (CF 2 ) 7 SO 2 N (CH 3 ) CH 2 CH 2 OCOC (CH 3 ) = CH 2 , CF 3 ( CF 2 ) 7 SO 2 N (CH 3 ) (CH 2 ) 10 OCOCH = CH 2 , C 2 F 5 SO 2 N (C 2 H 5 ) CH 2 CH 2 OCOC ( CH 3 ) = CH 2 , CF 3 (CF 2 ) 7 SO 2 N (CH 3 ) (CH 2 ) 4 OCOCH = CH 2 , C 2 F 5 SO 2 N (C 2 H 5 ) C (C 2 H 5 ) HCH 2 OCOCH = CH 2 and so on. These single bodies can be used singly or in combination of two or more kinds.

結構式(2)或結構式(3)所表示的氟烷基化烯烴例如可列舉:C3F7CH=CH2、C4F9CH=CH2、C10F21CH=CH2、C3F7OCF=CF2、C7F15OCF=CF2、C8F17OCF=CF2等。 Examples of the fluoroalkylated olefin represented by the structural formula (2) or the structural formula (3) include C 3 F 7 CH = CH 2 , C 4 F 9 CH = CH 2 , C 10 F 21 CH = CH 2 , C 3 F 7 OCF = CF 2 , C 7 F 15 OCF = CF 2 , C 8 F 17 OCF = CF 2 and so on.

結構式(4)或結構式(5)所表示的單量體例如可列舉:CH2=CHCOOCH2(CF2)3CH2OCOCH=CH2、 CH2=CHCOOCH2(CF2)6CH2OCOCH=CH2、CH2=CHCOOCH2CH(CH2C8F17)OCOCH=CH2等。 Examples of the singular body represented by the structural formula (4) or the structural formula (5) include: CH 2 = CHCOOCH 2 (CF 2 ) 3 CH 2 OCOCH = CH 2 , CH 2 = CHCOOCH 2 (CF 2 ) 6 CH 2 OCOCH = CH 2 , CH 2 = CHCOOCH 2 CH (CH 2 C 8 F 17 ), OCOCH = CH 2 and the like.

另外,含有氟原子的自由基聚合性單體或寡聚物亦可較佳地使用含有具有氟原子的重複單元、及具有自由基聚合性官能基的重複單元的寡聚物。 Further, as the radical polymerizable monomer or oligomer containing a fluorine atom, an oligomer containing a repeating unit having a fluorine atom and a repeating unit having a radical polymerizable functional group can be preferably used.

具有氟原子的重複單元較佳為選自下述式(6)、式(7)及式(10)所表示的重複單元的至少一種。 The repeating unit having a fluorine atom is preferably at least one selected from the repeating units represented by the following formula (6), formula (7), and formula (10).

式(6)中,R1、R2、R3及R4分別獨立地表示氫原子、鹵素原子、羥基或一價有機基,R1、R2、R3及R4中的至少一個為氟原子或具有氟原子的一價有機基。 In formula (6), R 1 , R 2 , R 3, and R 4 each independently represent a hydrogen atom, a halogen atom, a hydroxyl group, or a monovalent organic group, and at least one of R 1 , R 2 , R 3, and R 4 is A fluorine atom or a monovalent organic group having a fluorine atom.

式(7)中,R5、R6、R7分別獨立地表示氫原子、鹵素原子、羥基或一價有機基,Y1表示單鍵或選自由-CO-、-O-、-NH-、二價脂肪族基、二價芳香族基及該些基團的組合所組成的組群中的二價連結基。Rf表示氟原子或具有氟原子的一價有機基。 In formula (7), R 5 , R 6 , and R 7 each independently represent a hydrogen atom, a halogen atom, a hydroxyl group, or a monovalent organic group, and Y1 represents a single bond or is selected from the group consisting of -CO-, -O-, -NH-, A divalent linking group in a group consisting of a divalent aliphatic group, a divalent aromatic group, and a combination of these groups. Rf represents a fluorine atom or a monovalent organic group having a fluorine atom.

式(10)中,R8、R9、R10、R11、R12、R13分別獨立地表示氫原子、鹵素原子、羥基或一價有機基,Y2及Y3表示單鍵或選自由-CO-、-O-、-NH-、二價脂肪族基、二價芳香族基及該些基團的組 合所組成的組群中的二價連結基。Rf表示具有氟原子的二價有機基。 In formula (10), R 8 , R 9 , R 10 , R 11 , R 12 , and R 13 each independently represent a hydrogen atom, a halogen atom, a hydroxyl group, or a monovalent organic group, and Y 2 and Y 3 represent a single bond or an optional group. A divalent linking group in a group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and a combination of these groups. Rf represents a divalent organic group having a fluorine atom.

式(6)及式(7)中的具有氟原子的一價有機基並無特別限定,較佳為碳數1~30的含氟烷基,更佳為碳數1~20,尤佳為碳數1~15的含氟烷基。該含氟烷基可為直鏈(例如-CF2CF3、-CH2(CF2)4H、-CH2(CF2)8CF3、-CH2CH2(CF2)4H等),亦可具有分支結構(例如-CH(CF3)2、-CH2CF(CF3)2、-CH(CH3)CF2CF3、-CH(CH3)(CF2)5CF2H等),另外亦可具有脂環式結構(較佳為5員環或6員環,例如全氟環己基、全氟環戊基或經該些基團取代的烷基等),亦可含有醚鍵(例如-CH2OCH2CF2CF3、-CH2CH2OCH2C4F8H、-CH2CH2OCH2CH2C8F17、-CH2CF2OCF2CF2OCF2CF2H等)。另外,亦可為全氟烷基。 The monovalent organic group having a fluorine atom in the formulae (6) and (7) is not particularly limited, but is preferably a fluorine-containing alkyl group having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and particularly preferably A fluoroalkyl group having 1 to 15 carbon atoms. The fluorine-containing alkyl group may be a straight chain (for example, -CF 2 CF 3 , -CH 2 (CF 2 ) 4 H, -CH 2 (CF 2 ) 8 CF 3 , -CH 2 CH 2 (CF 2 ) 4 H, etc. ), May also have a branch structure (for example -CH (CF 3 ) 2 , -CH 2 CF (CF 3 ) 2 , -CH (CH 3 ) CF 2 CF 3 , -CH (CH 3 ) (CF 2 ) 5 CF 2 H, etc.), and may also have an alicyclic structure (preferably a 5-membered ring or a 6-membered ring, such as perfluorocyclohexyl, perfluorocyclopentyl, or alkyl substituted with these groups, etc.), also May contain ether bonds (e.g. -CH 2 OCH 2 CF 2 CF 3 , -CH 2 CH 2 OCH 2 C 4 F 8 H, -CH 2 CH 2 OCH 2 CH 2 C 8 F 17 , -CH 2 CF 2 OCF 2 CF 2 OCF 2 CF 2 H, etc.). Alternatively, it may be a perfluoroalkyl group.

式(10)中的具有氟原子的二價有機基並無特別限定,較佳為碳數1~30的含氟伸烷基,更佳為碳數1~20,尤佳為碳數1~15的含氟伸烷基。該含氟伸烷基可為直鏈(例如-CF2CF2-、-CH2(CF2)4-、-CH2(CF2)8CF2-、-CH2CH2(CF2)4-等),亦可具有分支結構(例如-CH(CF3)CF2-、-CH2CF(CF3)CF2-、-CH(CH3)CF2CF2-、-CH(CH3)(CF2)5CF2-等),另外亦可為具有脂環式結構(較佳為5員環或6員環,例如全氟環己基、全氟環戊基或經該些基團取代的烷基等)的連結基,亦可含有醚鍵(例如-CH2OCH2CF2CF2-、-CH2CH2OCH2C4F8-、-CH2CH2OCH2CH2C8F16-、-CH2CF2OCF2CF2OCF2CF2-、-CH2CF2OCF2CF2OCF2CF2-、聚全氟 伸烷基醚鏈等)。另外,亦可為全氟伸烷基。 The divalent organic group having a fluorine atom in the formula (10) is not particularly limited, but is preferably a fluorine-containing alkylene group having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and particularly preferably 1 to 2 carbon atoms. 15 fluorine-containing alkylene. The fluorine-containing alkylene may be linear (e.g. -CF 2 CF 2- , -CH 2 (CF 2 ) 4- , -CH 2 (CF 2 ) 8 CF 2- , -CH 2 CH 2 (CF 2 ) 4 -etc.), may also have a branched structure (e.g. -CH (CF 3 ) CF 2- , -CH 2 CF (CF 3 ) CF 2- , -CH (CH 3 ) CF 2 CF 2- , -CH (CH 3 ) (CF 2 ) 5 CF 2 -etc.), or may have an alicyclic structure (preferably a 5-membered ring or a 6-membered ring, such as perfluorocyclohexyl, perfluorocyclopentyl, or via these groups) (Such as a substituted alkyl group) may contain an ether bond (for example, -CH 2 OCH 2 CF 2 CF 2- , -CH 2 CH 2 OCH 2 C 4 F 8- , -CH 2 CH 2 OCH 2 CH 2 C 8 F 16- , -CH 2 CF 2 OCF 2 CF 2 OCF 2 CF 2- , -CH 2 CF 2 OCF 2 CF 2 OCF 2 CF 2- , polyperfluoroalkylene ether chain, etc.). Alternatively, it may be perfluoroalkylene.

式(6)、式(7)、式(10)中的一價有機基較佳為由3價~10價的非金屬原子所構成的有機基,例如可列舉:由選自1個~60個碳原子、0個~10個氮原子、0個~50個氧原子、1個~100個氫原子及0個~20個硫原子中的至少一種以上的元素所構成的有機基。 The monovalent organic group in the formula (6), the formula (7), and the formula (10) is preferably an organic group composed of a trivalent to 10-valent nonmetal atom, and examples thereof include: one selected from one to 60 An organic group composed of at least one element among carbon atoms, 0 to 10 nitrogen atoms, 0 to 50 oxygen atoms, 1 to 100 hydrogen atoms, and 0 to 20 sulfur atoms.

更具體的例子可列舉下述結構單獨或將多個組合而構成的有機基。 More specific examples include organic groups having the following structures alone or in combination.

一價有機基亦可更具有取代基,可導入的取代基例如可列舉:鹵素原子、羥基、羧基、磺酸根基(sulfonato)、硝基、氰基、醯胺基、胺基、烷基、烯基、炔基、芳基、經取代的氧基、經取代的磺醯基、經取代的羰基、經取代的亞磺醯基、磺基、膦醯基(phosphono)、膦酸根基(phosphonato)、矽烷基、雜環基等。另外,有機基亦可含有醚鍵、酯鍵、脲鍵。 The monovalent organic group may further have a substituent. Examples of the substituent that can be introduced include a halogen atom, a hydroxyl group, a carboxyl group, a sulfonato group, a nitro group, a cyano group, a fluorenylamino group, an amine group, an alkyl group, Alkenyl, alkynyl, aryl, substituted oxy, substituted sulfonyl, substituted carbonyl, substituted sulfinyl, sulfo, phosphono, phosphonato ), Silyl, heterocyclic and the like. The organic group may contain an ether bond, an ester bond, or a urea bond.

一價有機基較佳為烷基、烯基、炔基、芳基。烷基較佳為碳數1~8的烷基,例如可列舉甲基、乙基、丙基、辛基、異丙基、第三丁基、異戊基、2-乙基己基、2-甲基己基、環戊基等。烯基較佳為碳數2~20的烯基,例如可列舉乙烯基、烯丙基、異戊二烯基(prenyl)、香葉基、油基等。炔基較佳為碳數3~10的炔基,可列舉乙炔基、炔丙基、三甲基矽烷基乙炔基等。芳基較佳為碳數6~12的芳基,可列舉苯基、1-萘基、2-萘基等。進而,雜環基較佳為碳數2~10的雜環基,可列舉呋喃基、噻吩基 (thiophenyl)、吡啶基等。 The monovalent organic group is preferably an alkyl group, an alkenyl group, an alkynyl group, or an aryl group. The alkyl group is preferably an alkyl group having 1 to 8 carbon atoms, and examples thereof include methyl, ethyl, propyl, octyl, isopropyl, third butyl, isopentyl, 2-ethylhexyl, 2- Methylhexyl, cyclopentyl and the like. The alkenyl group is preferably an alkenyl group having 2 to 20 carbon atoms, and examples thereof include a vinyl group, an allyl group, a prenyl group, a geranyl group, and an oleyl group. The alkynyl group is preferably an alkynyl group having 3 to 10 carbon atoms, and examples thereof include an ethynyl group, a propargyl group, and a trimethylsilylethynyl group. The aryl group is preferably an aryl group having 6 to 12 carbon atoms, and examples thereof include a phenyl group, a 1-naphthyl group, and a 2-naphthyl group. Furthermore, the heterocyclic group is preferably a heterocyclic group having 2 to 10 carbon atoms, and examples thereof include furyl and thienyl. (thiophenyl), pyridyl and the like.

式(6)中的R1、R2、R3及R4、式(7)中的R5、R6、R7、式(10)中的R8、R9、R10、R11、R12、R13所表示的一價有機基較佳為烷基或芳基。 R 1 , R 2 , R 3 and R 4 in formula (6), R 5 , R 6 , R 7 in formula (7), R 8 , R 9 , R 10 , R 11 in formula (10) The monovalent organic group represented by R 12 , R 12 and R 13 is preferably an alkyl group or an aryl group.

烷基的例子較佳為碳數1~8的烷基,例如可列舉:甲基、乙基、丙基、辛基、異丙基、第三丁基、異戊基、2-乙基己基、2-甲基己基、環戊基等。芳基的例子較佳為碳數6~12的芳基,可列舉苯基、1-萘基、2-萘基等。其中,R1~R13較佳為氫原子或甲基。 Examples of the alkyl group are preferably an alkyl group having 1 to 8 carbon atoms, and examples thereof include methyl, ethyl, propyl, octyl, isopropyl, third butyl, isopentyl, and 2-ethylhexyl , 2-methylhexyl, cyclopentyl and the like. Examples of the aryl group are preferably an aryl group having 6 to 12 carbon atoms, and examples thereof include a phenyl group, a 1-naphthyl group, and a 2-naphthyl group. Among them, R 1 to R 13 are preferably a hydrogen atom or a methyl group.

以下列舉式(7)中的Y1及式(10)中的Y2及Y3所表示的選自由-CO-、-O-、-NH-、二價脂肪族基、二價芳香族基及該些基團的組合所組成的組群中的二價連結基的具體例。再者,下述例中,左側鍵結於主鏈,右側鍵結於Rf。 In the following, Y 1 in Formula (7) and Y 2 and Y 3 in Formula (10) are selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, and a divalent aromatic group. And specific examples of divalent linking groups in a group composed of a combination of these groups. In the following examples, the left side is bonded to the main chain and the right side is bonded to Rf.

L1:-CO-NH-二價脂肪族基-O-CO-NH-二價脂肪族基-O-CO- L1: -CO-NH-divalent aliphatic group-O-CO-NH-divalent aliphatic group-O-CO-

L2:-CO-NH-二價脂肪族基-O-CO- L2: -CO-NH-divalent aliphatic group -O-CO-

L3:-CO-二價脂肪族基-O-CO- L3: -CO-divalent aliphatic group -O-CO-

L4:-CO-O-二價脂肪族基-O-CO- L4: -CO-O-divalent aliphatic group -O-CO-

L5:-二價脂肪族基-O-CO- L5: -divalent aliphatic group -O-CO-

L6:-CO-NH-二價芳香族基-O-CO- L6: -CO-NH-divalent aromatic group -O-CO-

L7:-CO-二價芳香族基-O-CO- L7: -CO-divalent aromatic group -O-CO-

L8:-二價芳香族基-O-CO- L8: -divalent aromatic group -O-CO-

L9:-CO-O-二價脂肪族基-CO-O-二價脂肪族基-O-CO- L9: -CO-O-divalent aliphatic group-CO-O-divalent aliphatic group-O-CO-

L10:-CO-O-二價脂肪族基-O-CO-二價脂肪族基-O-CO- L10: -CO-O-divalent aliphatic group-O-CO-divalent aliphatic group-O-CO-

L11:-CO-O-二價芳香族基-CO-O-二價脂肪族基-O-CO- L11: -CO-O-divalent aromatic group-CO-O-divalent aliphatic group-O-CO-

L12:-CO-O-二價芳香族基-O-CO-二價脂肪族基-O-CO- L12: -CO-O-divalent aromatic group-O-CO-divalent aliphatic group-O-CO-

L13:-CO-O-二價脂肪族基-CO-O-二價芳香族基-O-CO- L13: -CO-O-divalent aliphatic group-CO-O-divalent aromatic group-O-CO-

L14:-CO-O-二價脂肪族基-O-CO-二價芳香族基-O-CO- L14: -CO-O-divalent aliphatic group-O-CO-divalent aromatic group-O-CO-

L15:-CO-O-二價芳香族基-CO-O-二價芳香族基-O-CO- L15: -CO-O-divalent aromatic group-CO-O-divalent aromatic group-O-CO-

L16:-CO-O-二價芳香族基-O-CO-二價芳香族基-O-CO- L16: -CO-O-divalent aromatic group-O-CO-divalent aromatic group-O-CO-

L17:-CO-O-二價芳香族基-O-CO-NH-二價脂肪族基-O-CO- L17: -CO-O-divalent aromatic group-O-CO-NH-divalent aliphatic group-O-CO-

L18:-CO-O-二價脂肪族基-O-CO-NH-二價脂肪族基-O-CO- L18: -CO-O-divalent aliphatic group-O-CO-NH-divalent aliphatic group-O-CO-

L19:-二價芳香族基-二價脂肪族基 L19:-divalent aromatic group-divalent aliphatic group

L20:-二價芳香族基-二價脂肪族基-O-二價脂肪族基- L20: -divalent aromatic group-divalent aliphatic group-O-divalent aliphatic group-

L21:-二價芳香族基-二價脂肪族基-O-二價脂肪族基-O- L21: -divalent aromatic group-divalent aliphatic group-O-divalent aliphatic group-O-

L22:-CO-O-二價脂肪族基- L22: -CO-O-divalent aliphatic group-

L23:-CO-O-二價脂肪族基-O- L23: -CO-O-divalent aliphatic group -O-

此處所謂二價脂肪族基,是指伸烷基、經取代的伸烷基、伸烯基、經取代的伸烯基、伸炔基、經取代的伸炔基或聚伸烷氧基。其中,較佳為伸烷基、經取代的伸烷基、伸烯基及經取代的伸烯基,更佳為伸烷基及經取代的伸烷基。 The divalent aliphatic group herein refers to an alkylene group, a substituted alkylene group, an alkylene group, a substituted alkylene group, an alkylene group, a substituted alkylene group, or a polyalkyleneoxy group. Among them, alkylene, substituted alkylene, alkylene and substituted alkylene are preferred, and alkylene and substituted alkylene are more preferred.

對於二價脂肪族基而言,鏈狀結構優於環狀結構,進而直鏈狀結構優於具有分支的鏈狀結構。二價脂肪族基的碳原子數較佳為1~20,更佳為1~15,進而佳為1~12,進而較佳為1~10, 進而更佳為1~8,尤佳為1~4。 For a divalent aliphatic group, a chain structure is better than a cyclic structure, and a linear structure is better than a branched chain structure. The number of carbon atoms of the divalent aliphatic group is preferably from 1 to 20, more preferably from 1 to 15, even more preferably from 1 to 12, even more preferably from 1 to 10, Furthermore, it is more preferably 1 to 8, and even more preferably 1 to 4.

二價脂肪族基的取代基的例子可列舉:鹵素原子(F、Cl、Br、I)、羥基、羧基、胺基、氰基、芳基、烷氧基、芳氧基、醯基、烷氧基羰基、芳氧基羰基、醯氧基、單烷基胺基、二烷基胺基、芳基胺基及二芳基胺基等。 Examples of the substituent of the divalent aliphatic group include a halogen atom (F, Cl, Br, I), a hydroxyl group, a carboxyl group, an amine group, a cyano group, an aryl group, an alkoxy group, an aryloxy group, a fluorenyl group, and an alkane group. Oxycarbonyl, aryloxycarbonyl, fluorenyloxy, monoalkylamino, dialkylamino, arylamino, and diarylamino groups.

二價芳香族基的例子可列舉伸苯基、經取代的伸苯基、萘基及經取代的萘基,較佳為伸苯基。二價芳香族基的取代基的例子除了所述二價脂肪族基的取代基的例子以外,可列舉烷基。 Examples of the divalent aromatic group include phenylene, substituted phenylene, naphthyl, and substituted naphthyl, and phenylene is preferred. Examples of the substituent of the divalent aromatic group include an alkyl group in addition to the examples of the substituent of the divalent aliphatic group.

相對於具有氟原子的自由基聚合性寡聚物的所有重複單元,具有氟原子的重複單元的含量較佳為2莫耳%~98莫耳%,更佳為10莫耳%~90莫耳%。 The content of the repeating unit having a fluorine atom with respect to all repeating units of the radically polymerizable oligomer having a fluorine atom is preferably 2 mol% to 98 mol%, and more preferably 10 mol% to 90 mol. %.

具有自由基聚合性官能基的重複單元較佳為下述式(8)所表示的重複單元。 The repeating unit having a radical polymerizable functional group is preferably a repeating unit represented by the following formula (8).

(通式(8)中,R801~R803分別獨立地表示氫原子、烷基或鹵素原子。Y8表示單鍵或選自由-CO-、-O-、-NH-、二價脂肪族基、二價芳香族基及該些基團的組合所組成的組群中的二價連結基。T 表示具有自由基聚合性官能基的結構) (In the general formula (8), R 801 to R 803 each independently represent a hydrogen atom, an alkyl group, or a halogen atom. Y 8 represents a single bond or is selected from the group consisting of -CO-, -O-, -NH-, and a divalent aliphatic group. Group, a divalent aromatic group, and a divalent linking group in a group consisting of a combination of these groups. T represents a structure having a radical polymerizable functional group)

作為R801~R803的烷基較佳為碳數1~6的烷基。 The alkyl group as R 801 to R 803 is preferably an alkyl group having 1 to 6 carbon atoms.

T較佳為表示通式(9)所表示的自由基聚合性官能基。 T is preferably a radical polymerizable functional group represented by the general formula (9).

(通式(9)中,R901~R903分別獨立地表示氫原子、烷基或芳基。點線表示與連結於Y8的基團的鍵結) (In the general formula (9), R 901 to R 903 each independently represent a hydrogen atom, an alkyl group, or an aryl group. A dotted line indicates a bond with a group connected to Y 8 )

烷基的例子較佳為碳數1~8的烷基,例如可列舉甲基、乙基、丙基、辛基、異丙基、第三丁基、異戊基、2-乙基己基、2-甲基己基、環戊基等。芳基的例子較佳為碳數6~12的芳基,可列舉苯基、1-萘基、2-萘基等。其中,R901~R903較佳為氫原子或甲基。 Examples of the alkyl group are preferably an alkyl group having 1 to 8 carbon atoms, and examples thereof include methyl, ethyl, propyl, octyl, isopropyl, third butyl, isopentyl, 2-ethylhexyl, 2-methylhexyl, cyclopentyl and the like. Examples of the aryl group are preferably an aryl group having 6 to 12 carbon atoms, and examples thereof include a phenyl group, a 1-naphthyl group, and a 2-naphthyl group. Among them, R 901 to R 903 are preferably a hydrogen atom or a methyl group.

Y8表示單鍵或選自由-CO-、-O-、-NH-、二價脂肪族基、二價芳香族基及該些基團的組合所組成的組群中的二價連結基。以下列舉包含組合的Y8的具體例。再者,下述例中左側鍵結於主鏈,右側鍵結於式(9)。 Y 8 represents a single bond or a divalent linking group selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and a combination of these groups. Specific examples of Y 8 including combinations are listed below. In the following examples, the left side is bonded to the main chain, and the right side is bonded to Formula (9).

L1:-CO-NH-二價脂肪族基-O-CO-NH-二價脂肪族基-O-CO- L1: -CO-NH-divalent aliphatic group-O-CO-NH-divalent aliphatic group-O-CO-

L2:-CO-NH-二價脂肪族基-O-CO- L2: -CO-NH-divalent aliphatic group -O-CO-

L3:-CO-二價脂肪族基-O-CO- L3: -CO-divalent aliphatic group -O-CO-

L4:-CO-O-二價脂肪族基-O-CO- L4: -CO-O-divalent aliphatic group -O-CO-

L5:-二價脂肪族基-O-CO- L5: -divalent aliphatic group -O-CO-

L6:-CO-NH-二價芳香族基-O-CO- L6: -CO-NH-divalent aromatic group -O-CO-

L7:-CO-二價芳香族基-O-CO- L7: -CO-divalent aromatic group -O-CO-

L8:-二價芳香族基-O-CO- L8: -divalent aromatic group -O-CO-

L9:-CO-O-二價脂肪族基-CO-O-二價脂肪族基-O-CO- L9: -CO-O-divalent aliphatic group-CO-O-divalent aliphatic group-O-CO-

L10:-CO-O-二價脂肪族基-O-CO-二價脂肪族基-O-CO- L10: -CO-O-divalent aliphatic group-O-CO-divalent aliphatic group-O-CO-

L11:-CO-O-二價芳香族基-CO-O-二價脂肪族基-O-CO- L11: -CO-O-divalent aromatic group-CO-O-divalent aliphatic group-O-CO-

L12:-CO-O-二價芳香族基-O-CO-二價脂肪族基-O-CO- L12: -CO-O-divalent aromatic group-O-CO-divalent aliphatic group-O-CO-

L13:-CO-O-二價脂肪族基-CO-O-二價芳香族基-O-CO- L13: -CO-O-divalent aliphatic group-CO-O-divalent aromatic group-O-CO-

L14:-CO-O-二價脂肪族基-O-CO-二價芳香族基-O-CO- L14: -CO-O-divalent aliphatic group-O-CO-divalent aromatic group-O-CO-

L15:-CO-O-二價芳香族基-CO-O-二價芳香族基-O-CO- L15: -CO-O-divalent aromatic group-CO-O-divalent aromatic group-O-CO-

L16:-CO-O-二價芳香族基-O-CO-二價芳香族基-O-CO- L16: -CO-O-divalent aromatic group-O-CO-divalent aromatic group-O-CO-

L17:-CO-O-二價芳香族基-O-CO-NH-二價脂肪族基-O-CO- L17: -CO-O-divalent aromatic group-O-CO-NH-divalent aliphatic group-O-CO-

L18:-CO-O-二價脂肪族基-O-CO-NH-二價脂肪族基-O-CO- L18: -CO-O-divalent aliphatic group-O-CO-NH-divalent aliphatic group-O-CO-

此處所謂二價脂肪族基,是指伸烷基、經取代的伸烷基、伸烯基、經取代的伸烯基、伸炔基、經取代的伸炔基或聚伸烷氧基。其中,較佳為伸烷基、經取代的伸烷基、伸烯基及經取代的伸烯基,更佳為伸烷基及經取代的伸烷基。 The divalent aliphatic group herein refers to an alkylene group, a substituted alkylene group, an alkylene group, a substituted alkylene group, an alkylene group, a substituted alkylene group, or a polyalkyleneoxy group. Among them, alkylene, substituted alkylene, alkylene and substituted alkylene are preferred, and alkylene and substituted alkylene are more preferred.

對於二價脂肪族基而言,鏈狀結構優於環狀結構,進而直鏈狀結構優於具有分支的鏈狀結構。二價脂肪族基的碳原子數較佳 為1~20,更佳為1~15,進而佳為1~12,進而較佳為1~10,進而更佳為1~8,尤佳為1~4。 For a divalent aliphatic group, a chain structure is better than a cyclic structure, and a linear structure is better than a branched chain structure. The number of carbon atoms of the divalent aliphatic group is better It is 1 to 20, more preferably 1 to 15, still more preferably 1 to 12, even more preferably 1 to 10, still more preferably 1 to 8, and even more preferably 1 to 4.

二價脂肪族基的取代基的例子可列舉:鹵素原子(F、Cl、Br、I)、羥基、羧基、胺基、氰基、芳基、烷氧基、芳氧基、醯基、烷氧基羰基、芳氧基羰基、醯氧基、單烷基胺基、二烷基胺基、芳基胺基及二芳基胺基等。 Examples of the substituent of the divalent aliphatic group include a halogen atom (F, Cl, Br, I), a hydroxyl group, a carboxyl group, an amine group, a cyano group, an aryl group, an alkoxy group, an aryloxy group, a fluorenyl group, and an alkane group. Oxycarbonyl, aryloxycarbonyl, fluorenyloxy, monoalkylamino, dialkylamino, arylamino, and diarylamino groups.

二價芳香族基的例子可列舉伸苯基、經取代的伸苯基、萘基及經取代的萘基,較佳為伸苯基。二價芳香族基的取代基的例子除了所述二價脂肪族基的取代基的例子以外,可列舉烷基。 Examples of the divalent aromatic group include phenylene, substituted phenylene, naphthyl, and substituted naphthyl, and phenylene is preferred. Examples of the substituent of the divalent aromatic group include an alkyl group in addition to the examples of the substituent of the divalent aliphatic group.

相對於具有氟原子的自由基聚合性寡聚物的所有重複單元,具有自由基聚合性官能基的重複單元的含量較佳為2莫耳%~98莫耳%,更佳為10莫耳%~90莫耳%。 The content of the repeating unit having a radical polymerizable functional group is preferably 2 mol% to 98 mol%, and more preferably 10 mol% with respect to all repeating units of the radically polymerizable oligomer having a fluorine atom. ~ 90 Mol%.

具有氟原子的自由基聚合性寡聚物的由凝膠滲透層析(GPC)法所得的聚苯乙烯換算的重量平均分子量較佳為2000~20000,更佳為2000~15000,最佳為2000~10000。 The weight-average molecular weight of polystyrene-equivalent polystyrene conversion obtained by the gel permeation chromatography (GPC) method of the radically polymerizable oligomer having a fluorine atom is preferably 2,000 to 20,000, more preferably 2,000 to 15,000, and most preferably 2,000. ~ 10000.

具有氟原子的自由基聚合性寡聚物的由凝膠滲透層析(GPC)法所得的聚苯乙烯換算的重量平均分子量較佳為2000~10000,更佳為8000~2000,最佳為6000~2000。 The weight-average molecular weight of a polystyrene-equivalent polystyrene-converted radical polymerizable oligomer having a fluorine atom obtained by a gel permeation chromatography (GPC) method is preferably 2000 to 10,000, more preferably 8000 to 2000, and most preferably 6000. ~ 2000.

於脫模區域形成用組成物含有具有氟原子的自由基聚合性單體或寡聚物的情形時,具有氟原子的自由基聚合性單體或寡聚物的含量並無特別限制,相對於脫模區域形成用組成物的總固體成分而較佳為0.01質量%~15質量%。若為0.01質量%以上, 則可獲得充分的剝離性。若為15質量%以下,則可獲得充分的接著力。 When the composition for forming a release region contains a radically polymerizable monomer or oligomer having a fluorine atom, the content of the radically polymerizable monomer or oligomer having a fluorine atom is not particularly limited, and is relative to The total solid content of the composition for forming a release region is preferably 0.01% by mass to 15% by mass. If it is 0.01% by mass or more, Then, sufficient peelability can be obtained. When it is 15% by mass or less, a sufficient adhesive force can be obtained.

具有氟原子的自由基聚合性單體或寡聚物可僅為一種,亦可為兩種以上。於聚合性單體為兩種以上的情形時,較佳為其合計為所述範圍。 There may be only one type of a radically polymerizable monomer or oligomer having a fluorine atom, or two or more types. When there are two or more kinds of polymerizable monomers, it is preferable that the total thereof is within the above range.

<<<具有矽原子的自由基聚合性單體或寡聚物>>> <<< Radical polymerizable monomer or oligomer having a silicon atom >>>

該具有矽原子的自由基聚合性單體或寡聚物較佳為矽酮單體或矽酮寡聚物,例如可列舉聚二甲基矽氧烷鍵的至少單末端成為(甲基)丙烯醯基及苯乙烯基等乙烯性不飽和基的化合物,較佳為具有(甲基)丙烯醯基的化合物。 The radically polymerizable monomer or oligomer having a silicon atom is preferably a silicone monomer or a silicone oligomer, and examples thereof include at least one end of a polydimethylsiloxane bond as (meth) propylene. The compound having an ethylenically unsaturated group such as a fluorenyl group and a styryl group is preferably a compound having a (meth) acrylic fluorenyl group.

具有矽原子的自由基聚合性寡聚物的由凝膠滲透層析法所得的聚苯乙烯換算的數量平均分子量較佳為1,000~10,000。於具有矽原子的自由基聚合性寡聚物的由凝膠滲透層析法所得的聚苯乙烯換算的數量平均分子量小於1,000或為10,000以上的情形時,難以表現出由矽原子所得的剝離性等性質。 The polystyrene-equivalent number average molecular weight of the radically polymerizable oligomer having a silicon atom by gel permeation chromatography is preferably 1,000 to 10,000. When the polystyrene-equivalent number-average molecular weight of the radically polymerizable oligomer having a silicon atom by gel permeation chromatography is less than 1,000 or 10,000 or more, it is difficult to exhibit peelability by a silicon atom. And other properties.

具有矽原子的自由基聚合性單體較佳為通式(11)或通式(12)所表示的化合物。 The radical polymerizable monomer having a silicon atom is preferably a compound represented by the general formula (11) or the general formula (12).

[化10] [Chemical 10]

(通式(11)及通式(12)中,R11~R19分別獨立地表示氫原子、烷基、烷氧基、烷氧基羰基或芳基。Z11、Z12及Z13分別獨立地表示自由基聚合性基。L11、L12及L13分別獨立地表示單鍵或二價連結基。n及m分別獨立地表示0以上的整數) (In the general formula (11) and the general formula (12), R 11 to R 19 each independently represent a hydrogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group, or an aryl group. Z 11 , Z 12, and Z 13 are each (L 11 , L 12, and L 13 each independently represent a single bond or a divalent linking group. N and m each independently represent an integer of 0 or more)

通式(11)及通式(12)中,R11~R19分別獨立地表示氫原子、烷基、烷氧基、烷氧基羰基或芳基。 In the general formula (11) and the general formula (12), R 11 to R 19 each independently represent a hydrogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group, or an aryl group.

烷基可為直鏈狀,亦可為分支鏈狀,較佳為碳數1~5的烷基,具體可列舉甲基、乙基、正丙基、異丙基等。烷氧基是指-OR20,R20表示烷基(較佳為碳數1~5的烷基),具體可列舉甲氧基、乙氧基、丙氧基、異丙氧基、丁氧基等。烷氧基羰基是指-C(=O)R21,R21表示烷氧基(較佳為碳數1~5的烷氧基),具體可列舉甲氧基羰基、乙氧基羰基、丙氧基羰基等。芳基可列舉苯基、甲苯基、萘基等,該些基團亦可具有取代基,可列舉苯基甲基(苄基)、苯基乙基、苯基丙基、苯基丁基、萘基甲基等。 The alkyl group may be linear or branched, and is preferably an alkyl group having 1 to 5 carbon atoms. Specific examples include methyl, ethyl, n-propyl, and isopropyl. The alkoxy group means -OR 20 , and R 20 represents an alkyl group (preferably an alkyl group having 1 to 5 carbon atoms). Specific examples include a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group, and a butoxy group. Base etc. The alkoxycarbonyl group means -C (= O) R 21 , and R 21 represents an alkoxy group (preferably an alkoxy group having 1 to 5 carbon atoms). Specific examples include a methoxycarbonyl group, an ethoxycarbonyl group, and a propyl group. Oxycarbonyl and the like. Examples of the aryl group include phenyl, tolyl, and naphthyl. These groups may also have a substituent. Examples include phenylmethyl (benzyl), phenylethyl, phenylpropyl, phenylbutyl, Naphthylmethyl and the like.

L11、L12及L13分別獨立地表示單鍵或二價連結基。二價連結基表示選自由-CO-、-O-、-NH-、二價脂肪族基、二價芳香族基及該些基團的組合所組成的組群中的二價連結基。 L 11 , L 12 and L 13 each independently represent a single bond or a divalent linking group. The divalent linking group represents a divalent linking group selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and a combination of these groups.

n及m分別獨立地表示0以上的整數,較佳為0~100 的整數,更佳為0~50的整數。 n and m each independently represent an integer of 0 or more, preferably 0 to 100 Is an integer from 0 to 50.

Z11、Z12及Z13分別獨立地表示自由基聚合性基,尤佳為下述通式(i)~通式(iii)的任一個所表示的官能基。 Z 11 , Z 12 and Z 13 each independently represent a radical polymerizable group, and particularly preferably a functional group represented by any one of the following general formulae (i) to (iii).

(通式(i)中,R101~R103分別獨立地表示氫原子或一價有機基。X101表示氧原子、硫原子或-N(R104)-,R104表示氫原子或一價有機基) (In the general formula (i), R 101 to R 103 each independently represent a hydrogen atom or a monovalent organic group. X 101 represents an oxygen atom, a sulfur atom, or -N (R 104 )-, and R 104 represents a hydrogen atom or a monovalent organic group. (Organic)

通式(i)中,R101~R103分別獨立地表示氫原子或一價有機基。R101較佳可列舉氫原子或可具有取代基的烷基等,其中,氫原子及甲基因自由基反應性高而較佳。另外,R102及R103分別獨立地較佳為表示氫原子、鹵素原子、胺基、羧基、烷氧基羰基、磺基、硝基、氰基、可具有取代基的烷基、可具有取代基的芳基、可具有取代基的烷氧基、可具有取代基的芳氧基、可具有取代基的烷基胺基、可具有取代基的芳基胺基、可具有取代基的烷基磺醯基或可具有取代基的芳基磺醯基,其中,氫原子、羧基、烷氧基羰基、可具有取代基的烷基、可具有取代基的芳基因自由基反應性高而較佳。 In the general formula (i), R 101 to R 103 each independently represent a hydrogen atom or a monovalent organic group. Preferred examples of R 101 include a hydrogen atom and an alkyl group which may have a substituent. Among these, a hydrogen atom and a methyl group are preferred because of their high reactivity. In addition, R 102 and R 103 each independently preferably represent a hydrogen atom, a halogen atom, an amine group, a carboxyl group, an alkoxycarbonyl group, a sulfo group, a nitro group, a cyano group, an alkyl group which may have a substituent, or a substituent which may have a substituent. Aryl group, alkoxy group which may have a substituent, aryloxy group which may have a substituent, alkylamine group which may have a substituent, arylamine group which may have a substituent, alkyl group which may have a substituent Sulfonyl or arylsulfonyl which may have a substituent, among which a hydrogen atom, a carboxyl group, an alkoxycarbonyl group, an alkyl which may have a substituent, and an aromatic gene which may have a substituent are highly reactive and preferable .

X101表示氧原子、硫原子或-N(R104)-,R104表示氫原子或一價有機基。一價有機基可列舉可具有取代基的烷基等。R104為氫原子、甲基、乙基或異丙基的情況下,因自由基反應性高而較佳。 X 101 represents an oxygen atom, a sulfur atom, or -N (R 104 )-, and R 104 represents a hydrogen atom or a monovalent organic group. Examples of the monovalent organic group include an alkyl group which may have a substituent. When R 104 is a hydrogen atom, a methyl group, an ethyl group, or an isopropyl group, it is preferable because the radical reactivity is high.

可導入的取代基可列舉:烷基、烯基、炔基、芳基、烷氧基、芳氧基、鹵素原子、胺基、烷基胺基、芳基胺基、羧基、烷氧基羰基、磺基、硝基、氰基、醯胺基、烷基磺醯基、芳基磺醯基等。 Examples of the substituent that can be introduced include an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an alkoxy group, an aryloxy group, a halogen atom, an amine group, an alkylamino group, an arylamino group, a carboxyl group, and an alkoxycarbonyl group. , Sulfo, nitro, cyano, amidino, alkylsulfonyl, arylsulfonyl and the like.

(通式(ii)中,R201~R205分別獨立地表示氫原子或一價有機基。Y201表示氧原子、硫原子或-N(R206)-。R206表示氫原子或一價有機基) (In the general formula (ii), R 201 to R 205 each independently represent a hydrogen atom or a monovalent organic group. Y 201 represents an oxygen atom, a sulfur atom, or -N (R 206 )-. R 206 represents a hydrogen atom or a monovalent organic group. (Organic)

通式(ii)中,R201~R205分別獨立地表示氫原子或一價有機基。R201~R205分別獨立地較佳為氫原子、鹵素原子、胺基、羧基、烷氧基羰基、磺基、硝基、氰基、可具有取代基的烷基、可具有取代基的芳基、可具有取代基的烷氧基、可具有取代基的芳氧基、可具有取代基的烷基胺基、可具有取代基的芳基胺基、可具有取代基的烷基磺醯基或可具有取代基的芳基磺醯基,更佳為氫原子、羧基、烷氧基羰基、可具有取代基的烷基或可具有取 代基的芳基。 In the general formula (ii), R 201 to R 205 each independently represent a hydrogen atom or a monovalent organic group. R 201 to R 205 are each independently preferably a hydrogen atom, a halogen atom, an amine group, a carboxyl group, an alkoxycarbonyl group, a sulfo group, a nitro group, a cyano group, an alkyl group which may have a substituent, and an aromatic group which may have a substituent. Group, alkoxy group which may have a substituent, aryloxy group which may have a substituent, alkylamino group which may have a substituent, arylamino group which may have a substituent, alkylsulfonyl group which may have a substituent Or an arylsulfonyl group which may have a substituent, more preferably a hydrogen atom, a carboxyl group, an alkoxycarbonyl group, an alkyl group which may have a substituent, or an aryl group which may have a substituent.

可導入的取代基可列舉與通式(i)中記載的取代基相同的基團。 Examples of the substituent that can be introduced include the same groups as those described in the general formula (i).

Y201表示氧原子、硫原子或-N(R206)-。R206與通式(i)的R104為相同含意,較佳例亦相同。 Y 201 represents an oxygen atom, a sulfur atom, or -N (R 206 )-. R 206 has the same meaning as R 104 of the general formula (i), and preferred examples are also the same.

(通式(iii)中,R301~R303分別獨立地表示氫原子或一價有機基。Z301表示氧原子、硫原子、-N(R304)-或可具有取代基的伸苯基。R304與通式(i)的R104為相同含意) (In the general formula (iii), R 301 to R 303 each independently represent a hydrogen atom or a monovalent organic group. Z 301 represents an oxygen atom, a sulfur atom, -N (R 304 )-or a phenylene group which may have a substituent. (R 304 has the same meaning as R 104 of general formula (i))

通式(iii)中,R301~R303分別獨立地表示氫原子或一價有機基。R301較佳為氫原子或可具有取代基的烷基,其中,氫原子或甲基因自由基反應性高而更佳。R302及R303分別獨立地較佳為氫原子、鹵素原子、胺基、羧基、烷氧基羰基、磺基、硝基、氰基、可具有取代基的烷基、可具有取代基的芳基、可具有取代基的烷氧基、可具有取代基的芳氧基、可具有取代基的烷基胺基、可具有取代基的芳基胺基、可具有取代基的烷基磺醯基或可具有取代基的芳基磺醯基,氫原子、羧基、烷氧基羰基、可具有取代 基的烷基或可具有取代基的芳基因自由基反應性高而更佳。 In the general formula (iii), R 301 to R 303 each independently represent a hydrogen atom or a monovalent organic group. R 301 is preferably a hydrogen atom or an alkyl group which may have a substituent. Among these, a hydrogen atom or a methyl group is more preferable because of its high radical reactivity. R 302 and R 303 are each independently preferably a hydrogen atom, a halogen atom, an amine group, a carboxyl group, an alkoxycarbonyl group, a sulfo group, a nitro group, a cyano group, an alkyl group which may have a substituent, and an aromatic group which may have a substituent. Group, alkoxy group which may have a substituent, aryloxy group which may have a substituent, alkylamino group which may have a substituent, arylamino group which may have a substituent, alkylsulfonyl group which may have a substituent Or an arylsulfonyl group which may have a substituent, a hydrogen atom, a carboxyl group, an alkoxycarbonyl group, an alkyl group which may have a substituent, or an aromatic gene which may have a substituent is highly reactive and free.

可導入的取代基可列舉與通式(i)中記載的取代基相同的基團。Z301表示氧原子、硫原子、-N(R304)-或可具有取代基的伸苯基。R304與通式(i)的R104為相同含意,一價有機基可列舉可具有取代基的烷基等,其中,甲基、乙基及異丙基因自由基反應性高而較佳。 Examples of the substituent that can be introduced include the same groups as those described in the general formula (i). Z 301 represents an oxygen atom, a sulfur atom, -N (R 304 )-or a phenylene group which may have a substituent. R 304 has the same meaning as R 104 of the general formula (i). Examples of the monovalent organic group include an alkyl group which may have a substituent. Among these, methyl, ethyl, and isopropyl gene radicals have high reactivity and are preferred.

於脫模區域形成用組成物含有具有矽原子的自由基聚合性單體或寡聚物的情形時,相對於脫模區域形成用組成物的總固體成分,具有矽原子的自由基聚合性單體或寡聚物的含量較佳為0.01質量%~15質量%。若為0.01質量%以上,則可獲得充分的剝離性。若為15質量%以下,則可獲得充分的接著力。 When the composition for mold release region formation contains a radical polymerizable monomer or oligomer having a silicon atom, the radical polymerizable monomer having a silicon atom is contained in the total solid content of the composition for mold release region formation. The content of the polymer or oligomer is preferably 0.01% by mass to 15% by mass. When it is 0.01% by mass or more, sufficient peelability can be obtained. When it is 15% by mass or less, a sufficient adhesive force can be obtained.

具有矽原子的自由基聚合性單體或寡聚物可僅為一種,亦可為兩種以上。於具有矽原子的自由基聚合性單體或寡聚物為兩種以上的情形時,較佳為其合計為所述範圍。 There may be only one type of radical polymerizable monomer or oligomer having a silicon atom, or two or more types. When there are two or more kinds of radically polymerizable monomers or oligomers having a silicon atom, it is preferable that the total thereof is within the above range.

具有氟原子或矽原子的自由基聚合性單體例如亦可例示:迪愛生(DIC)股份有限公司製造的RS-75、RS-72-K、RS-76-E、RS-72-K,大金(Daikin)工業股份有限公司製造的奧普茨(Optool)DAC-HP(氟系矽烷偶合劑),信越化學工業股份有限公司製造的X-22-164、X-22-164AS、X-22-164A、X-22-164B、X-22-164C、X-22-164E,大賽璐氰特(Daicel Cytec)股份有限公司製造的艾白克力(EBECRYL)350、艾白克力(EBECRYL)1360,德固賽(Degussa)公司製造的迪高(TEGORad)2700、UV-3500B(畢 克(BYK)公司製造)等。 Examples of the radically polymerizable monomer having a fluorine atom or a silicon atom include, for example, RS-75, RS-72-K, RS-76-E, and RS-72-K manufactured by DIC Corporation. Optool DAC-HP (Fluorine Silane Coupling Agent) manufactured by Daikin Industry Co., Ltd., X-22-164, X-22-164AS, X- 22-164A, X-22-164B, X-22-164C, X-22-164E, EBECRYL 350, EBECRYL 1360 manufactured by Daicel Cytec Co., Ltd., Germany TEGORad 2700, UV-3500B (Bi (BYK) company) and so on.

除了所述以外,具有氟原子或矽原子的材料可列舉:(十七氟-1,1,2,2-四氫癸基)三氯矽烷、(氟)烷基磷酸酯、氟化聚對二甲苯(parylene fluoride)、矽丙烯酸酯共聚物、四氟乙烯及2,2-雙-三氟甲基-4,5-二氟-1,3-二氧雜環戊烯的共聚物類,具有側基全氟烷氧基的聚合物,氟乙烯-丙烯共聚物等。 In addition to the above, examples of the material having a fluorine atom or a silicon atom include: (heptadecafluoro-1,1,2,2-tetrahydrodecyl) trichlorosilane, (fluoro) alkyl phosphate, and fluorinated polypara Copolymers of parylene fluoride, silicon acrylate copolymer, tetrafluoroethylene and 2,2-bis-trifluoromethyl-4,5-difluoro-1,3-dioxolene, Polymers with pendant perfluoroalkoxy groups, fluoroethylene-propylene copolymers, etc.

相對於暫時接著用組成物的總固體成分量(除了溶劑以外的量),脫模成分的含量較佳為0.01質量%~10質量%,更佳為0.05質量%~5質量%,尤佳為0.1質量%~1質量%。 The content of the mold release component is preferably 0.01% by mass to 10% by mass, more preferably 0.05% by mass to 5% by mass, and even more preferably 0.1 mass% to 1 mass%.

<<界面活性劑>> << Interactive Agent >>

暫時接著用組成物較佳為更含有界面活性劑。界面活性劑可較佳地使用接著區域的項中記載的界面活性劑,較佳範圍亦相同。 The composition for temporary subsequent use preferably contains a surfactant. As the surfactant, the surfactant described in the item of the next region is preferably used, and the preferable range is also the same.

相對於暫時接著用組成物的總固體成分量(除了溶劑以外的量),界面活性劑的含量較佳為0.001質量%~1質量%,更佳為0.01質量%~0.5質量%,尤佳為0.05質量%~0.1質量%。 The content of the surfactant is preferably 0.001% by mass to 1% by mass, more preferably 0.01% by mass to 0.5% by mass, and even more preferably, relative to the total solid content (amount other than the solvent) of the composition for temporary bonding. 0.05% by mass to 0.1% by mass.

界面活性劑可僅為一種,亦可為兩種以上。於界面活性劑為兩種以上的情形時,較佳為其合計為所述範圍。 The surfactant may be only one kind, or two or more kinds. When there are two or more kinds of surfactants, it is preferable that the total thereof is within the above range.

<<抗氧化劑>> << Antioxidant >>

暫時接著用組成物較佳為更含有抗氧化劑。抗氧化劑可較佳地使用接著區域的項中記載的抗氧化劑,較佳範圍亦相同。 The composition for temporary follow-up preferably contains an antioxidant. As the antioxidant, the antioxidant described in the item of the next region can be preferably used, and the preferable range is the same.

相對於暫時接著用組成物的總固體成分量(除了溶劑以外的量),抗氧化劑的含量較佳為0.001質量%~10質量%,更佳為0.01 質量%~5質量%,尤佳為0.1質量%~1質量%。 The content of the antioxidant is preferably 0.001% by mass to 10% by mass, and more preferably 0.01 relative to the total solid content (amount other than the solvent) of the composition for temporary bonding. Mass% to 5 mass%, particularly preferably 0.1 mass% to 1 mass%.

抗氧化劑可僅為一種,亦可為兩種以上。於抗氧化劑為兩種以上的情形時,較佳為其合計為所述範圍。 The antioxidant may be only one kind, or two or more kinds. When there are two or more antioxidants, it is preferable that the total thereof is within the above range.

<<塑化劑>> << Plasticizer >>

暫時接著用組成物為了提高高溫下的變形性而提高接著平坦性,較佳為含有塑化劑。 The temporary bonding composition preferably contains a plasticizer in order to improve the flatness of bonding at a high temperature.

塑化劑可使用鄰苯二甲酸酯、脂肪酸酯、芳香族多元羧酸酯、聚酯等。 As the plasticizer, phthalic acid ester, fatty acid ester, aromatic polycarboxylic acid ester, polyester, and the like can be used.

鄰苯二甲酸酯例如可列舉:DMP、DEP、DBP、#10、BBP、DOP、DINP、DIDP(以上為大八化學製造),PL-200、DOIP(以上為CG酯(CG Ester)製造),散所賽澤(Sansocizer)DUP(新日本理化製造)等。 Examples of phthalic acid esters are: DMP, DEP, DBP, # 10, BBP, DOP, DINP, DIDP (the above are manufactured by Big Eight Chemicals), PL-200, DOIP (the above are manufactured by CG Ester) ), Sansocizer DUP (manufactured by New Japan Physicochemical), etc.

脂肪酸酯例如可列舉:硬脂酸丁酯,尤尼斯達(Unistar)M-9676、尤尼斯達(Unistar)M-2222SL、尤尼斯達(Unistar)H-476、尤尼斯達(Unistar)H-476D、帕那賽特(Panasate)800B、帕那賽特(Panasate)875、帕那賽特(Panasate)810(以上為日油製造),DBA、DIBA、DBS、DOA、DINA、DIDA、DOS、BXA、DOZ、DESU(以上為大八化學製造)等。 Examples of fatty acid esters include: butyl stearate, Unistar M-9676, Unistar M-2222SL, Unistar H-476, Unistar H -476D, Panasate 800B, Panasate 875, Panasate 810 (above are manufactured by Nippon Oil), DBA, DIBA, DBS, DOA, DINA, DIDA, DOS , BXA, DOZ, DESU (the above are manufactured by Da Ya Chemical) and so on.

芳香族多元羧酸酯可列舉:TOTM(大八化學製造),莫諾賽澤(Monocizer)W-705(大八化學製造),UL-80、UL-100(艾迪科(ADEKA)製造)等。 Examples of aromatic polycarboxylic acid esters are: TOTM (manufactured by Daiha Chemical), Monocizer W-705 (manufactured by Daiha Chemical), UL-80, UL-100 (manufactured by ADEKA) Wait.

聚酯可列舉:寶理賽澤(Polycizer)TD-1720、寶理賽澤 (Polycizer)S-2002、寶理賽澤(Polycizer)S-2010(以上為迪愛生(DIC)製造),BAA-15(大八化學製造)等。 Polyester can be listed: Polycizer TD-1720, Polysizer (Polycizer) S-2002, Polycizer S-2010 (above, manufactured by DIC), BAA-15 (made by Da Ya Chemicals), etc.

所述塑化劑中,較佳為DIDP、DIDA、TOTM、尤尼斯達(Unistar)M-2222SL、寶理賽澤(Polycizer)TD-1720,更佳為DIDA、TOTM,尤佳為TOTM。 Among the plasticizers, preferred are DIDP, DIDA, TOTM, Unistar M-2222SL, Polycizer TD-1720, more preferably DIDA, TOTM, and most preferably TOTM.

塑化劑可僅使用一種,亦可將兩種以上組合。 The plasticizer may be used alone or in combination of two or more.

關於塑化劑的分子量,就防止加熱過程中的昇華的觀點而言,於氮氣流下、20℃/min的一定速度升溫條件下測定時重量減少1質量%的溫度較佳為250℃以上,更佳為270℃以上,尤佳為300℃以上。上限並無特別限定,例如可設定為500℃以下。 Regarding the molecular weight of the plasticizer, from the viewpoint of preventing sublimation during heating, the temperature at which the weight is reduced by 1% by mass when measured under a nitrogen flow at a constant temperature increase rate of 20 ° C / min is preferably 250 ° C or more, and more The temperature is preferably 270 ° C or higher, and particularly preferably 300 ° C or higher. The upper limit is not particularly limited, and may be set to 500 ° C or lower, for example.

相對於暫時接著用組成物的總質量,塑化劑的含量較佳為1質量%~50.0質量%,更佳為5質量%~20.0質量%。 The content of the plasticizer is preferably 1% by mass to 50.0% by mass, and more preferably 5% by mass to 20.0% by mass relative to the total mass of the composition to be temporarily adhered.

塑化劑可僅為一種,亦可為兩種以上。於塑化劑為兩種以上的情形時,較佳為其合計為所述範圍。 There may be only one plasticizer or two or more plasticizers. When there are two or more plasticizers, it is preferable that the total thereof is within the above range.

<<其他添加劑>> << Other additives >>

本發明的暫時接著用組成物亦可於不損及本發明的效果的範圍內,視需要而調配各種添加物、例如硬化劑、硬化觸媒、填充劑、紫外線吸收劑、抗凝聚劑等。於調配該些添加劑的情形時,其合計調配量較佳為設定為暫時接著用組成物的固體成分的3質量%以下。 The composition for temporary bonding of the present invention may be formulated with various additives such as a hardener, a curing catalyst, a filler, an ultraviolet absorber, an anti-agglomerating agent, and the like, as long as the effect of the present invention is not impaired. When these additives are blended, the total blended amount is preferably set to 3% by mass or less of the solid content of the composition for temporary bonding.

本發明的暫時接著膜的接著區域可藉由以下方式而形成:使用現有公知的旋塗法、噴霧法、輥塗法、流塗法、刮刀塗 佈法、浸漬法等,將上文所述的暫時接著用組成物塗佈於支撐基板上,繼而進行乾燥。其中,較佳為旋塗法、噴霧法、網版印刷法,更佳為旋塗法、噴霧法,尤佳為旋塗法。 The bonding region of the temporary bonding film of the present invention can be formed by using a conventionally known spin coating method, spray method, roll coating method, flow coating method, and doctor blade coating. In the cloth method, the dipping method, and the like, the composition described above is temporarily applied to the support substrate and then dried. Among them, a spin coating method, a spray method, and a screen printing method are preferred, a spin coating method, a spray method is more preferred, and a spin coating method is particularly preferred.

<脫模區域形成用組成物> <Composition for forming mold release area>

繼而,對脫模區域形成用組成物加以說明。 Next, the composition for mold release area formation is demonstrated.

脫模區域形成用組成物較佳為含有脫模成分及溶劑。 The composition for forming a mold release region preferably contains a mold release component and a solvent.

<<脫模成分>> << Release component >>

脫模成分較佳為含有選自氟原子及矽原子中的至少一種的材料。含有選自氟原子及矽原子中的至少一種的材料可列舉含有氟原子或矽原子的聚合性單體等。更佳為氟系矽烷偶合劑。藉由氟系矽烷偶合劑,可於接著區域的表面上牢固地形成脫模區域的層。因此,溶劑不易滲進接著區域的層與脫模區域的層的界面上,可形成耐化學性優異的暫時接著膜。關於脫模成分的詳細情況,與上文所述的暫時接著用組成物的脫模成分的項中說明的成分相同,較佳範圍亦相同。 The mold release component is preferably a material containing at least one selected from a fluorine atom and a silicon atom. Examples of the material containing at least one selected from a fluorine atom and a silicon atom include a polymerizable monomer containing a fluorine atom or a silicon atom. More preferred is a fluorine-based silane coupling agent. With the fluorine-based silane coupling agent, a layer in the release region can be firmly formed on the surface of the bonding region. Therefore, the solvent does not easily penetrate into the interface between the layer in the bonding region and the layer in the release region, and a temporary bonding film having excellent chemical resistance can be formed. The details of the mold release component are the same as those described in the section of the mold release component of the composition for the time being, and the preferred ranges are also the same.

就良好的剝離性的觀點而言,相對於脫模區域形成用組成物的總固體成分,脫模成分的含量較佳為5質量%~100質量%,更佳為50質量%~100質量%,進而佳為90質量%~100質量%。 From the viewpoint of good peelability, the content of the mold release component is preferably 5% to 100% by mass, and more preferably 50% to 100% by mass, relative to the total solid content of the composition for forming the mold release region. , And further preferably 90% by mass to 100% by mass.

<<溶劑>> << Solvent >>

溶劑只要可形成脫模區域,則可無限制地使用公知的溶劑,可使用與上文所述的暫時接著用組成物中的溶劑相同的溶劑。另外,可使用全氟烷烴。其中,較佳為N-甲基-2-吡咯啶酮、2-丁酮、 甲基戊基酮、檸檬烯、1-甲氧基-2-丙基乙酸酯、全氟烷烴、甲基乙基酮,更佳為N-甲基-2-吡咯啶酮、2-丁酮、甲基戊基酮、檸檬烯、1-甲氧基-2-丙基乙酸酯。 As long as the solvent can form a mold release region, a known solvent can be used without limitation, and the same solvent as the solvent in the temporary bonding composition described above can be used. In addition, perfluoroalkanes can be used. Among them, N-methyl-2-pyrrolidone, 2-butanone, Methylpentyl ketone, limonene, 1-methoxy-2-propyl acetate, perfluoroalkane, methyl ethyl ketone, more preferably N-methyl-2-pyrrolidone, 2-butanone , Methylpentyl ketone, limonene, 1-methoxy-2-propyl acetate.

就改良塗佈面狀等觀點而言,該些溶劑亦較佳為將兩種以上混合的形態。 From the viewpoint of improving the coating surface, these solvents are also preferably in the form of a mixture of two or more.

<<其他成分>> << Other ingredients >>

脫模區域形成用組成物除了所述成分以外,可進一步於不損及本發明的效果的範圍內根據目的而含有各種化合物。例如可較佳地使用熱聚合起始劑、增感色素、鏈轉移劑、抗氧化劑、界面活性劑。該些成分可使用上文所述的暫時接著用組成物中說明的成分。 In addition to the above-mentioned components, the composition for forming a mold release region may further contain various compounds depending on the purpose, as long as the effect of the present invention is not impaired. For example, a thermal polymerization initiator, a sensitizing dye, a chain transfer agent, an antioxidant, and a surfactant can be preferably used. As these components, the components described in the temporary application composition described above can be used.

脫模區域形成用組成物的固體成分濃度較佳為3質量%~40質量%,更佳為5質量%~40質量%。 The solid content concentration of the composition for forming a release region is preferably 3% by mass to 40% by mass, and more preferably 5% by mass to 40% by mass.

脫模區域可藉由以下方式形成:使用現有公知的旋塗法、噴霧法、輥塗法、流塗法、刮刀塗佈法、浸漬法等,將上文所述的脫模區域形成用組成物塗佈於支撐基板上,繼而進行乾燥。其中,較佳為旋塗法、噴霧法、網版印刷法,更佳為旋塗法、噴霧法,尤佳為旋塗法。 The demolding region can be formed by using a conventionally known spin coating method, spray method, roll coating method, flow coating method, doctor blade coating method, dipping method, and the like, and forming the aforementioned demolding region forming composition. The object is coated on a support substrate and then dried. Among them, a spin coating method, a spray method, and a screen printing method are preferred, a spin coating method, a spray method is more preferred, and a spin coating method is particularly preferred.

<套組> <Set>

繼而,對用以形成本發明的暫時接著膜的套組加以說明。 Next, a set for forming the temporary adhesive film of the present invention will be described.

本發明的套組包含上文所述的暫時接著用組成物、與含有脫模成分及溶劑的上文所述的脫模區域形成用組成物。 The kit of the present invention includes the composition for temporary bonding described above and the composition for forming a mold release region containing a mold release component and a solvent.

藉由在支撐基板上依序塗佈暫時接著用組成物及脫模區域形成用組成物,可製作本發明的暫時接著膜。 The temporary adhesive film of the present invention can be produced by sequentially coating the temporary adhesive composition and the release region forming composition on the support substrate.

另外,藉由在元件晶圓上依序塗佈脫模區域形成用組成物及暫時接著用組成物,亦可製作本發明的暫時接著膜。 In addition, the temporary adhesive film of the present invention can also be produced by sequentially applying a composition for forming a release region and a composition for temporary adhesion on an element wafer.

暫時接著用組成物及脫模區域形成用組成物的各組成、較佳範圍等與上文所述相同。 Each composition, preferable range, and the like of the composition for temporary use and the composition for forming a release region are the same as those described above.

<積層體> <Layered body>

繼而,對本發明的積層體加以說明。 Next, the laminated body of this invention is demonstrated.

本發明的積層體是於上文所述的本發明的暫時接著膜的脫模區域的表面上積層元件晶圓而成。 The laminated body of the present invention is obtained by laminating element wafers on the surface of the release region of the temporary bonding film of the present invention described above.

元件晶圓可無限制地使用公知的元件晶圓,例如可列舉矽基板、化合物半導體基板等。化合物半導體基板的具體例可列舉:SiC基板、SiGe基板、ZnS基板、ZnSe基板、GaAs基板、InP基板、GaN基板等。 As the element wafer, a known element wafer can be used without limitation, and examples thereof include a silicon substrate and a compound semiconductor substrate. Specific examples of the compound semiconductor substrate include a SiC substrate, a SiGe substrate, a ZnS substrate, a ZnSe substrate, a GaAs substrate, an InP substrate, and a GaN substrate.

於元件晶圓的表面上,亦可形成機械結構或電路。形成有機械結構或電路的元件晶圓例如可列舉:微電機系統(Micro Electro Mechanical Systems,MEMS)、功率元件、影像感測器、微感測器(microsensor)、發光二極體(Light Emitting Diode,LED)、光學元件、內插器(interposer)、嵌埋型元件、微元件等。 Mechanical structures or circuits can also be formed on the surface of the element wafer. For example, a device wafer formed with a mechanical structure or a circuit may include a micro electro mechanical system (MEMS), a power device, an image sensor, a microsensor, and a light emitting diode , LED), optical components, interposers, embedded components, micro-components, etc.

元件晶圓較佳為具有金屬岸堤(bank)等結構。本發明的暫時接著膜對表面上具有結構的元件晶圓亦可穩定地暫時接著,並且可容易地解除對元件晶圓的暫時接著。結構的高度並無特別限 定,例如較佳為5μm~100μm。 The element wafer preferably has a structure such as a metal bank. The temporary bonding film of the present invention can also stably perform temporary bonding on a device wafer having a structure on the surface, and can easily release the temporary bonding on the device wafer. The height of the structure is not particularly limited It is preferably, for example, 5 μm to 100 μm.

實施機械處理或化學處理之前的元件晶圓的膜厚較佳為500μm以上,更佳為600μm以上,進而佳為700μm以上。 The film thickness of the element wafer before the mechanical or chemical treatment is preferably 500 μm or more, more preferably 600 μm or more, and even more preferably 700 μm or more.

實施機械處理或化學處理而薄膜化後的元件晶圓的膜厚例如較佳為小於500μm,更佳為400μm以下,進而佳為300μm以下。 The film thickness of the element wafer after being thinned by mechanical or chemical treatment is, for example, preferably less than 500 μm, more preferably 400 μm or less, and even more preferably 300 μm or less.

本發明的積層體中,較佳為於暫時接著膜的與元件晶圓的積層面為相反側的面上配置有支撐基板。 In the multilayer body of the present invention, it is preferable that a support substrate is disposed on a surface of the element wafer that is temporarily adhered to the film and that is on the opposite side to the element wafer.

支撐基板的原材料並無特別限定,例如可列舉矽基板、玻璃基板、金屬基板、化合物半導體基板等。其中,鑒於不易污染作為半導體元件的基板而代表性地使用的矽基板的方面、或可使用半導體元件的製造步驟中廣泛使用的靜電夾盤的方面等,較佳為矽基板。 The material of the support substrate is not particularly limited, and examples thereof include a silicon substrate, a glass substrate, a metal substrate, and a compound semiconductor substrate. Among them, a silicon substrate is preferred in terms of not easily contaminating a silicon substrate that is typically used as a substrate of a semiconductor element, or an aspect that can use an electrostatic chuck that is widely used in manufacturing steps of a semiconductor element.

支撐基板的厚度並無特別限定,例如較佳為300μm~5mm。 The thickness of the support substrate is not particularly limited, but is preferably 300 μm to 5 mm, for example.

<元件製造方法> <Element Manufacturing Method>

繼而,對本發明的元件製造方法加以說明。 Next, a device manufacturing method of the present invention will be described.

本發明的元件製造方法包括塗佈上文所述的本發明的暫時接著用組成物的步驟。以下,對本發明的元件製造方法加以更詳細說明。 The device manufacturing method of the present invention includes the step of applying the temporary bonding composition of the present invention described above. Hereinafter, the element manufacturing method of the present invention will be described in more detail.

<<支撐基板-暫時接著膜-元件晶圓積層體的製造>> << Manufacture of Supporting Substrate-Temporary Adhesive Film-Element Wafer Laminate >>

支撐基板-暫時接著膜-元件晶圓積層體(以下亦稱為積層體)可藉由以下的(1)~(4)所示的任一方法而製造。 The support substrate-temporary bonding film-element wafer laminated body (hereinafter also referred to as a laminated body) can be manufactured by any one of the following methods (1) to (4).

(1)於支撐基板上塗佈本發明的暫時接著用組成物,進行加 熱(烘烤)而形成接著區域的層。暫時接著用組成物的塗佈方法可列舉旋塗法、噴霧法、輥塗法、流塗法、刮刀塗佈法、浸漬法等以前公知的方法。 (1) The temporary bonding composition of the present invention is coated on a support substrate, and Heat (bake) to form a layer that adheres to the area. Examples of the coating method for temporarily applying the composition include conventionally known methods such as a spin coating method, a spray method, a roll coating method, a flow coating method, a doctor blade coating method, and a dipping method.

繼而,於接著區域的層上塗佈上文所述的脫模區域形成用組成物,進行加熱(烘烤)而形成脫模區域的層,形成本發明的暫時接著膜。脫模區域形成用組成物的塗佈方法可列舉旋塗法、噴霧法、輥塗法、流塗法、刮刀塗佈法、浸漬法等以前公知的方法。 Then, the above-mentioned composition for forming a mold release region is applied to the layer of the adhesive region, and the layer of the mold release region is formed by heating (baking) to form the temporary adhesive film of the present invention. Examples of a method for applying the composition for forming a mold release region include a conventionally known method such as a spin coating method, a spray method, a roll coating method, a flow coating method, a doctor blade coating method, and a dipping method.

然後,於暫時接著膜的與配置有支撐基板的面為相反側的面(即,暫時接著膜的脫模區域側的面)上加壓接著元件晶圓,製造積層體。加壓接著條件例如較佳為溫度100℃~200℃、壓力0.01MPa~1MPa、時間1分鐘~15分鐘。 Then, the element wafer is press-bonded onto a surface on the side opposite to the surface on which the supporting substrate is temporarily disposed of the film (that is, the surface on the side of the release region of the film) to produce a laminated body. The pressure bonding conditions are preferably, for example, a temperature of 100 ° C. to 200 ° C., a pressure of 0.01 MPa to 1 MPa, and a time of 1 minute to 15 minutes.

(2)於元件晶圓塗佈上文所述的脫模區域形成用組成物,進行加熱(烘烤)而形成脫模區域的層。 (2) The above-mentioned composition for forming a mold release region is applied to the element wafer, and the layer is formed by heating (baking) the mold release region.

繼而,於脫模區域的層上塗佈本發明的暫時接著用組成物,進行加熱(烘烤)而形成接著區域的層,形成本發明的暫時接著膜。 Then, the composition for temporary adhesion of this invention is apply | coated on the layer of a mold release area | region, and it heats (bakes), and forms the layer of an adhesion area | region, and forms the temporary adhesion film of this invention.

然後,於暫時接著膜的與配置有元件晶圓的面為相反側的面(即,暫時接著膜的接著區域側的面)上加壓接著支撐基板,製造積層體。加壓接著條件較佳為上文所述的條件。 Then, the substrate is pressed and supported on the surface on the side opposite to the surface on which the element wafer is temporarily disposed of the film (that is, the surface on the side of the region where the film is temporarily adhered) to produce a laminated body. The pressure bonding conditions are preferably the conditions described above.

(3)於支撐基板及元件晶圓的任一表面上塗佈含有脫模成分的本發明的暫時接著用組成物,進行加熱(烘烤),形成脫模區域偏向存在於接著區域的表層而成的暫時接著膜。 (3) The composition for temporary bonding of the present invention containing a mold release component is coated on any surface of the support substrate and the element wafer, and heating (baking) is performed to form a mold release region that is biased to a surface layer existing in the adhesion region The film is temporarily adhered.

繼而,於暫時接著膜的表面上加壓接著支撐基板或元件晶圓,製造積層體。加壓接著條件較佳為上文所述的條件。 Then, the substrate or the element wafer is pressed and supported on the surface of the temporarily adhered film to manufacture a laminated body. The pressure bonding conditions are preferably the conditions described above.

(4)於元件晶圓上塗佈上文所述的脫模區域形成用組成物,進行加熱(烘烤)而於元件晶圓上形成脫模區域的層。 (4) The above-mentioned composition for forming a release region is coated on the element wafer, and the layer is formed on the element wafer by heating (baking).

繼而,於支撐基板塗佈上文所述的本發明的暫時接著用組成物,進行加熱(烘烤),於支撐基板上形成接著區域的層。 Then, the temporary bonding composition of the present invention described above is applied to the support substrate, and the substrate is heated (baked) to form a layer of a bonding region on the support substrate.

然後,將元件晶圓上的脫模區域與支撐基板上的接著區域加壓接著而形成暫時接著膜,並且製造積層體。加壓接著條件較佳為上文所述的條件。 Then, the release region on the element wafer and the bonding region on the support substrate are press-bonded to form a temporary bonding film, and a laminated body is manufactured. The pressure bonding conditions are preferably the conditions described above.

以下,一面參照圖1一面對經過利用所述(4)所示的方法來製造積層體的步驟的元件晶圓的製造方法加以說明。 Hereinafter, a method for manufacturing an element wafer after the step of manufacturing a laminated body by the method shown in (4) above will be described with reference to FIG. 1.

圖1的(A)、圖1的(B)及圖1的(C)分別為對支撐基板與元件晶圓的暫時接著加以說明的概略剖面圖、表示藉由支撐基板而暫時接著的元件晶圓的概略剖面圖、及表示使藉由支撐基板而暫時接著的元件晶圓薄型化的狀態的概略剖面圖。 FIG. 1 (A), FIG. 1 (B), and FIG. 1 (C) are schematic cross-sectional views explaining a temporary and subsequent explanation of a support substrate and an element wafer, respectively, and showing element crystals temporarily adhered by the support substrate. A circle schematic cross-sectional view and a schematic cross-sectional view showing a state where the element wafer temporarily attached by the support substrate is thinned.

如圖1的(A)所示,元件晶圓60是於矽基板61的表面61a設有多個元件晶片62而成。而且,進而於元件晶圓60的結構62側的面設有脫模區域71。 As shown in FIG. 1A, the element wafer 60 is formed by providing a plurality of element wafers 62 on the surface 61 a of the silicon substrate 61. Further, a release region 71 is provided on a surface on the structure 62 side of the element wafer 60.

元件晶圓60較佳為具有平均膜厚500μm以上的膜厚。另外,結構62被稱為元件晶片或凸塊,平均高度較佳為5μm~100μm的範圍。 The element wafer 60 preferably has an average film thickness of 500 μm or more. The structure 62 is called an element wafer or a bump, and the average height is preferably in a range of 5 μm to 100 μm.

如圖1的(A)所示,準備於支撐基板12上設置接著區域 11而成的接著性支撐體100。接著性支撐體100可藉由以下方式而形成:使用以前公知的旋塗法、噴霧法、輥塗法、流塗法、刮刀塗佈法、浸漬法等將本發明的暫時接著用組成物塗佈於支撐基板12上,繼而進行乾燥。 As shown in FIG. 1 (A), it is prepared to provide a bonding area on the support substrate 12. 11 is an adhesive support 100. The adhesive support 100 can be formed by coating the temporarily adherent composition of the present invention with a conventionally known spin coating method, spray method, roll coating method, flow coating method, doctor blade coating method, dipping method, or the like. It is spread on the support substrate 12 and then dried.

繼而,對如以上般所得的接著性支撐體100與元件晶圓60的暫時接著、元件晶圓60的薄型化及自元件晶圓上的接著性支撐體100的剝離加以說明。 Next, the temporary support of the adhesive support 100 and the element wafer 60 obtained as described above, the thickness reduction of the element wafer 60, and the peeling of the adhesive support 100 from the element wafer will be described.

將設於元件晶圓上的脫模區域71的表面按壓於接著性支撐體100的接著區域11上。藉此如圖1的(B)所示,脫模區域71與接著區域11接著,形成具有脫模區域71及接著區域11的暫時接著膜80。 The surface of the mold release region 71 provided on the element wafer is pressed against the bonding region 11 of the bonding support 100. Thereby, as shown in FIG.1 (B), the mold release area 71 and the bonding area 11 are continued, and the temporary bonding film 80 which has the mold release area 71 and the bonding area 11 is formed.

繼而,對矽基板61的背面61b實施機械處理或化學處理(並無特別限定,例如磨碎(grinding)或化學機械研磨(Chemical-Mechanical Polishing,CMP)等薄膜化處理,化學氣相沈積(Chemical Vapor Deposition,CVD)或物理氣相沈積(Physical Vapor Deposition,PVD)等高溫.真空下的處理,使用有機溶劑、酸性處理液或鹼性處理液等化學品的處理,鍍敷處理,光化射線的照射,加熱.冷卻處理等),如圖1的(C)所示,使矽基板61的厚度變薄(例如較佳為平均厚度小於500μm,更佳為1μm~200μm),獲得薄型元件晶圓60a。 Next, the back surface 61b of the silicon substrate 61 is subjected to a mechanical treatment or a chemical treatment (there is no particular limitation, such as grinding or chemical-mechanical polishing (CMP)), and a thin film treatment such as chemical vapor deposition (Chemical High temperature such as Vapor Deposition (CVD) or Physical Vapor Deposition (PVD). Treatment under vacuum, treatment with chemicals such as organic solvents, acidic treatment solutions or alkaline treatment solutions, plating treatment, actinic rays Irradiation, heating, cooling treatment, etc.), as shown in FIG. 1 (C), the thickness of the silicon substrate 61 is reduced (for example, the average thickness is preferably less than 500 μm, more preferably 1 μm to 200 μm) to obtain a thin element crystal Circle 60a.

另外,亦可進行以下處理作為機械處理或化學處理:於薄膜化處理後,形成自薄型元件晶圓60a的背面61c貫通矽基板的貫 通孔(未圖示),於該貫通孔內形成矽貫通電極(未圖示)。具體而言,加熱處理中的最高到達溫度較佳為130℃~400℃,更佳為180℃~350℃。加熱處理中的最高到達溫度是設定為低於接著區域的軟化點的溫度。加熱處理較佳為最高到達溫度下的30秒鐘~30分鐘的加熱,更佳為最高到達溫度下的1分鐘~10分鐘的加熱。 In addition, the following process may be performed as a mechanical process or a chemical process. After the thin film process, a silicon substrate is formed from the back surface 61c of the thin element wafer 60a to penetrate the silicon substrate. A through hole (not shown) is formed with a silicon through electrode (not shown) in the through hole. Specifically, the maximum temperature reached during the heat treatment is preferably 130 ° C to 400 ° C, and more preferably 180 ° C to 350 ° C. The maximum temperature reached during the heat treatment is set to a temperature lower than the softening point of the subsequent region. The heat treatment is preferably heating for 30 seconds to 30 minutes at the highest reaching temperature, and more preferably heating for 1 minute to 10 minutes at the highest reaching temperature.

繼而,將暫時接著膜80自薄型元件晶圓60a的表面61a剝離。 Then, the film 80 is temporarily peeled from the surface 61a of the thin element wafer 60a.

暫時接著膜80的剝離較佳為藉由撕下等物理作用來進行。另外,較佳為藉由以下方式進行:相對於接著性支撐體100使薄型元件晶圓60a滑動,或自接著性支撐體100剝離薄型元件晶圓60a。藉由所述方法,可將暫時接著膜80自薄型元件晶圓60a的表面61a剝離。 The peeling of the film 80 temporarily is preferably performed by a physical action such as tearing. In addition, it is preferable that the thin element wafer 60 a is slid with respect to the adhesive support 100, or the thin element wafer 60 a is peeled from the adhesive support 100. By this method, the temporary adhesive film 80 can be peeled from the surface 61a of the thin element wafer 60a.

自薄型元件晶圓60a剝離暫時接著膜80後,視需要亦可利用剝離液等對薄型元件晶圓60a的表面61a進行處理。剝離液例如可使用日本專利特開2014-80570號公報的段落編號0203~段落編號0212中記載的剝離液等。再者,本發明的暫時接著膜80未必一定需要利用剝離液等的處理。亦可僅藉由機械剝離在不產生剝離殘渣等的情況下將暫時接著膜80自薄型元件晶圓60a的表面61a上去除。 After the film 80 is temporarily detached from the thin element wafer 60a, the surface 61a of the thin element wafer 60a may be treated with a stripping solution or the like as necessary. As the peeling liquid, for example, the peeling liquid described in paragraph number 0203 to paragraph number 0212 of Japanese Patent Laid-Open No. 2014-80570 can be used. In addition, the temporary bonding film 80 of the present invention does not necessarily need to be treated with a peeling liquid or the like. The temporary adhesive film 80 may be removed from the surface 61a of the thin element wafer 60a only by mechanical peeling without causing peeling residues or the like.

本發明的元件製造方法不限定於上文所述的實施形態,可進行適當的變形、改良等。 The device manufacturing method of the present invention is not limited to the embodiments described above, and can be appropriately modified, improved, and the like.

另外,於上文所述的實施形態中,脫模層為單層結構,但脫 模層亦可為多層結構。 In addition, in the embodiment described above, the release layer has a single-layer structure, but the release layer The mold layer may have a multilayer structure.

另外,於上文所述的實施形態中,被處理構件可列舉矽基板,但不限定於此,亦可為元件製造方法中可供機械處理或化學處理的任意被處理構件。例如亦可列舉化合物半導體基板,化合物半導體基板的具體例可列舉:SiC基板、SiGe基板、ZnS基板、ZnSe基板、GaAs基板、InP基板及GaN基板等。 In addition, in the embodiment described above, the substrate to be processed may be a silicon substrate, but it is not limited thereto, and may be any substrate to be processed that can be mechanically processed or chemically processed in the element manufacturing method. For example, a compound semiconductor substrate may be mentioned. Specific examples of the compound semiconductor substrate include a SiC substrate, a SiGe substrate, a ZnS substrate, a ZnSe substrate, a GaAs substrate, an InP substrate, and a GaN substrate.

另外,於上文所述的實施形態中,對藉由支撐基板加以支撐的矽基板的機械處理或化學處理可列舉矽基板的薄膜化處理、及矽貫通電極的形成處理,但不限定於該些處理,亦可列舉元件製造方法中所必需的任意處理。 In addition, in the embodiment described above, the mechanical treatment or chemical treatment of the silicon substrate supported by the support substrate may include a thin film processing of the silicon substrate and a process of forming a silicon through electrode, but the invention is not limited to this. These processes may also be arbitrarily required in the element manufacturing method.

除此以外,上文所述的實施形態中所例示的元件晶圓中的元件晶片的形狀、尺寸、數量、配置部位等為任意,並無限定。 In addition, the shape, size, number, arrangement position, and the like of the element wafer among the element wafers exemplified in the embodiment described above are arbitrary and are not limited.

[實施例] [Example]

以下,藉由實施例對本發明加以更具體說明,但本發明只要不超出其主旨,則不限定於以下的實施例。另外,只要無特別說明,則「份」、「%」為質量基準。 Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to the following examples as long as the present invention does not exceed the gist thereof. In addition, unless otherwise specified, "part" and "%" are quality standards.

(實施例1) (Example 1)

<接著區域的形成> <Formation of Adjoining Area>

藉由旋塗機(三笠(Mikasa)製造的奧菩提扣(Opticoat)MS-A100,1200rpm,30秒鐘)將表1所示的組成的接著區域形成用組成物1塗佈於4吋Si晶圓上後,於120℃下烘烤3分鐘,於250℃下烘烤3分鐘,形成設有厚度5μm的接著區域的晶圓1。 A spin coater (Opticoat MS-A100 manufactured by Mikasa, 1200 rpm, 30 seconds) was used to apply the composition 1 for forming a bonding region having the composition shown in Table 1 to a 4-inch Si crystal. After being rounded, the wafer 1 was baked at 120 ° C. for 3 minutes and 250 ° C. for 3 minutes to form a wafer 1 having a bonding region having a thickness of 5 μm.

<脫模區域的形成> <Formation of demolding area>

對於晶圓1的接著區域,藉由旋塗機(三笠(Mikasa)製造的奧菩提扣(Opticoat)MS-A100,1200,rpm,30秒鐘)來塗佈表2所示的組成的脫模區域形成用組成物1後,於加熱板上於120℃下烘烤30秒鐘,於190℃下烘烤3分鐘,於接著區域上形成厚度0.1μm的脫模區域,形成設有暫時接著膜的晶圓1。 For the bonding area of the wafer 1, a mold release having the composition shown in Table 2 was applied by a spin coater (Opticoat MS-A100, 1200, rpm, 30 seconds manufactured by Mikasa). After the composition 1 for area formation, it was baked on a hot plate at 120 ° C for 30 seconds, and then baked at 190 ° C for 3 minutes. A release area having a thickness of 0.1 μm was formed on the adhesion area, and a temporary adhesion film was formed. Of the wafer 1.

<試片的製作> <Production of test strip>

將晶圓1與表面上未經任何塗佈的4吋Si晶圓(晶圓2)熱壓接,由此製作試片。 Wafer 1 was bonded to a 4-inch Si wafer (wafer 2) without any coating on the surface to prepare a test piece.

[壓接] [Crimp]

以晶圓1的具有暫時接著膜的面與晶圓2的未經任何塗佈的面接觸的方式進行重疊,於190℃、0.20MPa下加壓接著3分鐘。 The surface of the wafer 1 having the temporary adhesive film was overlapped with the surface of the wafer 2 without any coating, and then pressed at 190 ° C and 0.20 MPa for 3 minutes.

[烘烤] [bake]

加壓接著後,於280℃下加熱30分鐘。 After pressing, heating was performed at 280 ° C for 30 minutes.

(實施例2~實施例32、實施例35) (Example 2 to Example 32, Example 35)

於實施例1中,將接著區域形成用組成物與脫模區域形成用組成物分別以表3所示的組合來形成接著區域與脫模區域,依照實施例1來製作設有暫時接著膜的試片。 In Example 1, the bonding region formation composition and the mold release region formation composition were each combined with the composition shown in Table 3 to form the bonding region and the mold release region, and a temporary bonding film was prepared in accordance with Example 1. Audition.

(實施例33) (Example 33)

將99質量%的接著區域形成用組成物19與1質量%的脫模區域形成用組成物1進行混合而製備的組成物,藉由旋塗機(三笠(Mikasa)製造的奧菩提扣(Opticoat)MS-A100,1200rpm,30 秒鐘)塗佈於4吋Si晶圓上後,於120℃下烘烤3分鐘,於250℃下烘烤3分鐘,形成設有厚度5μm的接著區域的晶圓1,依照實施例1而製作設有暫時接著膜的試片。 A composition prepared by mixing 99% by mass of the composition 19 for forming an adhesive region and 1% by mass of the composition 1 for forming a mold release region, the composition was prepared by a spin coater (Optika made by Mikasa) ) MS-A100, 1200rpm, 30 Seconds) after coating on a 4-inch Si wafer, baking at 120 ° C for 3 minutes, and baking at 250 ° C for 3 minutes to form a wafer 1 with a bonding region having a thickness of 5 μm. A test piece provided with a temporary adhesive film was produced.

(實施例34) (Example 34)

將99質量%的接著區域形成用組成物19與1質量%的脫模區域形成用組成物2進行混合而製備的組成物,藉由旋塗機(三笠(Mikasa)製造的奧菩提扣(Opticoat)MS-A100,1200rpm,30秒鐘)塗佈於4吋Si晶圓上後,於120℃下烘烤3分鐘,於250℃下烘烤3分鐘,形成設有厚度5μm的接著區域的晶圓1,依照實施例1而製作設有暫時接著膜的試片。 A composition prepared by mixing 99% by mass of the composition 19 for forming an adhesive region and 1% by mass of the composition 2 for forming a release region by a spin coater (Optika made by Mikasa) ) MS-A100, 1200 rpm, 30 seconds) After coating on a 4-inch Si wafer, bake at 120 ° C for 3 minutes and 250 ° C for 3 minutes to form a crystal with a 5 μm thickness bonding area Circle 1, a test piece provided with a temporary adhesive film was produced in accordance with Example 1.

(比較例1) (Comparative example 1)

於實施例1中,不使用脫模區域形成用組成物1,除此以外,依照實施例1而製作設有暫時接著膜的試片。 In Example 1, a test piece provided with a temporary adhesive film was produced in accordance with Example 1 except that the composition 1 for forming a release region was not used.

(比較例2) (Comparative example 2)

於實施例1中,不使用接著區域形成用組成物1,除此以外,依照實施例1而製作設有暫時接著膜的試片。 In Example 1, except that the composition 1 for forming an adhesive region was not used, a test piece provided with a temporary adhesive film was produced in accordance with Example 1.

(比較例3~比較例7) (Comparative Example 3 to Comparative Example 7)

於實施例1中,使用比較用組成物1~比較用組成物7代替接著區域形成用組成物1,除此以外,依照實施例1而製作設有暫時接著膜的試片。 In Example 1, except that the comparative composition 1 to the comparative composition 7 were used in place of the bonding region forming composition 1, the test piece provided with the temporary bonding film was prepared in accordance with Example 1.

<接著性> <Adherence>

使用拉伸試驗機(今田(IMADA)製造),以50mm/min的 條件於沿著暫時接著膜的面的方向進行拉伸測定,按照以下基準來評價所製作的試片的剪切接著力。以下的評價基準中,2~5為實用,較佳為3~5。 Using a tensile tester (manufactured by Imada) at 50 mm / min. The condition is that the tensile measurement is performed along the direction of the surface where the film is temporarily adhered, and the shear adhesion of the produced test piece is evaluated in accordance with the following criteria. In the following evaluation criteria, 2 to 5 are practical, and 3 to 5 are preferred.

5:80N以上的接著力 5: 80N or more

4:60N以上且小於80N的接著力 4: Adhesion force above 60N and less than 80N

3:40N以上且小於60N的接著力 Adhesive force above 3: 40N and less than 60N

2:20N以上且小於40N的接著力 2: Adhesion force above 20N and less than 40N

1:小於20N的接著力 1: Adhesive force less than 20N

<剝離性> <Peelability>

對所製作的試片以50mm/min的條件在與暫時接著膜的面垂直的方向進行拉伸測定,按以下基準進行評價。以下的評價基準中,2~5為實用,較佳為3~5。 The produced test piece was subjected to tensile measurement at a condition of 50 mm / min in a direction perpendicular to the surface where the film was temporarily adhered, and evaluated based on the following criteria. In the following evaluation criteria, 2 to 5 are practical, and 3 to 5 are preferred.

5:能以小於3N的力剝離,在晶圓2的表面藉由目測未見殘渣 5: Can be peeled off with a force of less than 3N, and no residue is visually observed on the surface of the wafer 2

4:能以3N以上且小於5N的力剝離,在晶圓2的表面藉由目測未見殘渣 4: Can be peeled off with a force of 3N or more and less than 5N, and no residue is visually observed on the surface of the wafer 2

3:能以3N以上且小於5N的力剝離,但在晶圓2的表面藉由目測可見殘渣 3: Can be peeled off with a force of 3N or more and less than 5N, but the residue can be visually observed on the surface of the wafer 2

2:能以5N以上且7N以下的力剝離,但在晶圓2的表面藉由目測可見殘渣 2: Peeling can be performed with a force of 5N or more and 7N or less, but the residue is visually observed on the surface of the wafer 2

1:晶圓於剝離的過程中破損 1: The wafer is broken during the peeling process

<耐化學性> <Chemical resistance>

將所製作的試片放入至經25℃的N-甲基-2-吡咯啶酮填滿的玻璃容器中,使用超音波清洗機施加15分鐘超音波後,觀察樣品,按以下基準進行評價。於以下的評價基準中,2~5為實用,較佳為3~5。 The prepared test piece was placed in a glass container filled with N-methyl-2-pyrrolidone at 25 ° C, and after applying ultrasonic waves for 15 minutes using an ultrasonic cleaner, the samples were observed and evaluated according to the following criteria. . In the following evaluation criteria, 2 to 5 are practical, and 3 to 5 are preferred.

5:並無晶圓的剝離,且剝離後的暫時接著膜表面未因溶媒而受到侵蝕。 5: There is no peeling of the wafer, and the surface of the film temporarily adhered after peeling is not eroded by the solvent.

4:並無晶圓的剝離,但剝離後的暫時接著膜的距與溶媒接觸的側面小於1mm的範圍因溶媒而受到侵蝕。 4: There is no peeling of the wafer, but the range where the distance from the side where the film is in contact with the solvent temporarily after the peeling is less than 1 mm is eroded by the solvent.

3:並無晶圓的剝離,但剝離後的暫時接著膜的距與溶媒接觸的側面為1mm以上且小於5mm的範圍因溶媒而受到侵蝕。 3: There is no peeling of the wafer, but the distance from the side where the film is temporarily adhered to the solvent after peeling is in the range of 1 mm or more and less than 5 mm due to the solvent.

2:並無晶圓的剝離,但剝離後的暫時接著膜的距與溶劑接觸的側面為5mm以上的範圍因溶媒而受到侵蝕。 2: There is no peeling of the wafer, but the range of 5 mm or more from the side surface in contact with the solvent after the peeling of the temporarily adhered film is eroded by the solvent.

1:晶圓剝離。 1: Wafer peeling.

<孔隙(void)> <Void (void)>

於形成晶圓1時,使用4吋玻璃晶圓代替4吋Si晶圓,除此以外不進行變更,形成實施例1~實施例35及比較例1~比較例9的暫時接著層,與4吋Si晶圓貼合。將所得的樣品於氮氣環境下利用烘箱於400℃下加熱3小時。其後,自樣品的玻璃晶圓側目測觀察暫時接著層,按以下基準進行評價。以下的評價基準中,2~5為實用,較佳為3~5。 When forming the wafer 1, a 4-inch glass wafer was used instead of a 4-inch Si wafer, and no change was made except for the temporary bonding layers of Examples 1 to 35 and Comparative Examples 1 to 9, and Inch Si wafer. The obtained sample was heated at 400 ° C for 3 hours in an oven under a nitrogen atmosphere. Thereafter, the temporarily adhered layer was visually observed from the glass wafer side of the sample, and evaluated according to the following criteria. In the following evaluation criteria, 2 to 5 are practical, and 3 to 5 are preferred.

再者,所謂孔隙,是指暫時接著層與玻璃晶圓的界面上產生的空隙。 In addition, the pore means a void generated at the interface between the adhesion layer and the glass wafer temporarily.

5:完全未見孔隙。 5: No pores were seen at all.

4:可見小於5個孔隙。 4: Less than 5 pores are visible.

3:可見5個以上且小於10個孔隙。 3: 5 or more and less than 10 pores are visible.

2:可見10個以上且小於15個孔隙。 2: 10 or more and less than 15 pores are visible.

1:可見15個以上的孔隙。 1: 15 or more pores are visible.

表1中記載的化合物如以下所述。 The compounds described in Table 1 are as follows.

[樹脂成分] [Resin composition]

B-1:杜麗密(Durimide)(註冊商標)284 B-1: Durimide (registered trademark) 284

(富士膠片(Fujifilm)製造,可溶於溶劑的聚醯亞胺樹脂) (Soluble polyimide resin made by Fujifilm)

B-2:杜麗密(Durimide)(註冊商標)10 B-2: Durimide (registered trademark) 10

(富士膠片(Fujifilm)製造,可溶於溶劑的聚醯胺醯亞胺樹脂) (Polyfluoride and imide resin soluble in solvents made by Fujifilm)

B-3:GPT-LT(群榮化學製造,可溶於溶劑的聚醯亞胺樹脂) B-3: GPT-LT (solvent-soluble polyimide resin manufactured by Qunrong Chemical)

B-4:麗佳可(Rikacoat)(新日本理化製造,聚醯胺醯亞胺樹脂) B-4: Rikacoat (manufactured by New Japan Physicochemical Co., Ltd.)

B-5:瓦羅麥(Vylomax)(註冊商標)13NX B-5: Vylomax (registered trademark) 13NX

(東洋紡製造,聚醯胺醯亞胺樹脂) (Manufactured by Toyobo Co., Ltd.)

B-6:MRS0810H B-6: MRS0810H

(PBI製造,聚苯并咪唑樹脂) (Manufactured by PBI, polybenzimidazole resin)

B-7:CRC-8800(住友電木(Sumitomo Bakelite)製造,聚苯并噁唑樹脂) B-7: CRC-8800 (manufactured by Sumitomo Bakelite, polybenzoxazole resin)

B-8:奧托拉僧(Ultrason)E6020(巴斯夫(BASF)製造,聚醚碸樹脂) B-8: Ultrason E6020 (manufactured by BASF, polyether resin)

B-9:PCZ-500(MGC製造,聚碳酸酯樹脂) B-9: PCZ-500 (manufactured by MGC, polycarbonate resin)

[交聯成分] [Crosslinking component]

C-1:BMI-1000(大和化成工業製造,雙馬來醯亞胺樹脂) C-1: BMI-1000 (manufactured by Daiwa Chemical Industry, bismaleimide resin)

C-2:BMI-2000(大和化成工業製造,雙馬來醯亞胺樹脂) C-2: BMI-2000 (manufactured by Yamato Chemical Industry, bismaleimide resin)

C-3:BMI-3000(大和化成工業製造,雙馬來醯亞胺樹脂) C-3: BMI-3000 (manufactured by Daiwa Chemical Industries, bismaleimide resin)

C-4:BMI-4000(大和化成工業製造,雙馬來醯亞胺樹脂) C-4: BMI-4000 (manufactured by Daiwa Chemical Industry, bismaleimide resin)

C-5:BMI-5000(大和化成工業製造,雙馬來醯亞胺樹脂) C-5: BMI-5000 (manufactured by Daiwa Chemical Industry, bismaleimide resin)

C-6:BMI-7000(大和化成工業製造,雙馬來醯亞胺樹脂) C-6: BMI-7000 (manufactured by Yamato Chemical Industry, bismaleimide resin)

C-7:BANI-X(新中村化學製造,雙馬來醯亞胺樹脂) C-7: BANI-X (manufactured by Shin Nakamura Chemical, bismaleimide resin)

C-8:BANI-M(新中村化學製造,雙馬來醯亞胺樹脂) C-8: BANI-M (manufactured by Shin Nakamura Chemical, bismaleimide resin)

C-9:A-9300(新中村化學製造,丙烯酸酯樹脂) C-9: A-9300 (manufactured by Shin Nakamura Chemical, acrylic resin)

[熱聚合起始劑] [Thermal polymerization initiator]

D-1:帕庫密路(Percumyl)H(日油製造,有機過氧化物,一分鐘半衰期溫度254℃) D-1: Percumyl H (manufactured by Nippon Oil, organic peroxide, one-minute half-life temperature of 254 ° C)

D-2:帕庫密路(Percumyl)P(日油製造,有機過氧化物,一分鐘半衰期溫度232.5℃) D-2: Percumyl P (manufactured by Nippon Oil, organic peroxide, one-minute half-life temperature of 232.5 ° C)

D-3:帕布其路(Perbutyl)Z(日油製造,有機過氧化物,一分鐘半衰期溫度166.8℃) D-3: Perbutyl Z (manufactured by Nippon Oil, organic peroxide, one-minute half-life temperature of 166.8 ° C)

D-4:耐帕BW(NyperBW)(日油製造,有機過氧化物,一分鐘半衰期溫度130.0℃) D-4: NyperBW (manufactured by Nippon Oil, organic peroxide, one-minute half-life temperature of 130.0 ° C)

D-5:V-601(和光製造,偶氮起始劑,一分鐘半衰期溫度120℃) D-5: V-601 (manufactured by Wako, azo initiator, one-minute half-life temperature 120 ° C)

表1中的比較組成物1~比較組成物8是利用以下方法製備。 Comparative compositions 1 to 8 in Table 1 were prepared by the following methods.

比較用組成物1:製備日本專利特開2014-29999號公報的實施例1的組成物。 Comparative composition 1: The composition of Example 1 of Japanese Patent Laid-Open No. 2014-29999 was prepared.

比較用組成物2:製備日本專利特開2014-29999號公報的實施例2的組成物。 Comparative composition 2: The composition of Example 2 of Japanese Patent Laid-Open No. 2014-29999 was prepared.

比較用組成物3:製備日本專利特開2014-29999號公報的實施例3的組成物。 Comparative composition 3: A composition of Example 3 of Japanese Patent Laid-Open No. 2014-29999 was prepared.

比較用組成物4:製備日本專利特開2014-29999號公報的實施例4的組成物。 Comparative composition 4: The composition of Example 4 of Japanese Patent Laid-Open No. 2014-29999 was prepared.

比較用組成物5:製備日本專利特開2014-29999號公報的實施例5的組成物。 Comparative composition 5: The composition of Example 5 of Japanese Patent Laid-Open No. 2014-29999 was prepared.

比較用組成物6:製備日本專利特開2014-29999號公報的實施例6的組成物。 Comparative composition 6: A composition of Example 6 of Japanese Patent Laid-Open No. 2014-29999 was prepared.

比較用組成物7:使暫時接著用組成物1中不含交聯成分C-1。 Composition 7 for comparison: The cross-linking component C-1 was not included in the composition 1 for temporary adhesion.

表1中的400℃質量減少率是利用以下方法測定。 The 400 ° C mass reduction rate in Table 1 was measured by the following method.

<400℃質量減少率> <400 ° C mass reduction rate>

藉由熱重量分析裝置Q500(TA公司製造),將2mg~3mg的試樣於鋁鍋(Aluminum Pan)上於60mL/min的氮氣流下自初期溫度25℃起以10℃/min的一定升溫條件升溫至400℃,測定達到400℃時的殘存質量。 Using a thermogravimetric analyzer Q500 (manufactured by TA Corporation), a 2 mg to 3 mg sample was placed on an aluminum pan (Aluminum Pan) under a nitrogen flow of 60 mL / min under a constant temperature rising condition of 10 ° C./min from an initial temperature of 25 ° C. The temperature was raised to 400 ° C, and the residual mass at 400 ° C was measured.

表1中的溶解度是利用以下方法測定。 The solubility in Table 1 was measured by the following method.

<溶解度> <Solubility>

一面攪拌試樣一面對100g的N-甲基-2-吡咯啶酮添加一定量,確認溶解性。於完全溶解的情形時進一步將試樣於攪拌下添加一定量,重複所述操作,將最終於25℃下經1小時攪拌時試樣 即將不溶解之前的量作為溶解度。 While stirring the sample, 100 g of N-methyl-2-pyrrolidone was added to a certain amount, and the solubility was confirmed. When it is completely dissolved, further add a certain amount of sample under stirring, repeat the operation, and finally stir the sample at 25 ° C for 1 hour. The amount immediately before dissolution was taken as the solubility.

表2中記載的化合物如以下所述。 The compounds described in Table 2 are as follows.

[脫模成分] [Release component]

A-1:奧普茨(Optool)DSX(大金(Daikin)工業公司製造,氟系矽烷偶合劑) A-1: Optool DSX (manufactured by Daikin Industries, fluorine-based silane coupling agent)

A-2:RS-72-K(迪愛生(DIC)公司製造,氟系化合物) A-2: RS-72-K (manufactured by DIC Corporation, fluorine-based compound)

A-3:RS-76-E(迪愛生(DIC)公司製造,氟系化合物) A-3: RS-76-E (manufactured by DIC Corporation, fluorine-based compound)

A-4:UV-3500B(畢克(BYK)公司製造,矽系化合物) A-4: UV-3500B (manufactured by BYK, silicon-based compound)

A-5:(十七氟-1,1,2,2-四氫癸基)三氯矽烷(TCI公司製造) A-5: (heptadecafluoro-1,1,2,2-tetrahydrodecyl) trichlorosilane (manufactured by TCI)

A-6:凱米諾斯(CHEMINOX)FHP-2-OH(尤妮曼(Unimatec)公司製造,氟系化合物) A-6: CHEMINOX FHP-2-OH (manufactured by Unimatec, fluorine compound)

A-7:鐵氟龍(TEFLON)(註冊商標)AF(三井杜邦氟化學(Dupont Fluoro chemical)公司製造,氟系化合物) A-7: Teflon (registered trademark) AF (manufactured by Mitsui Dupont Fluoro chemical company, fluorine-based compounds)

A-8:CYTOP(旭硝子公司製造,氟系化合物) A-8: CYTOP (manufactured by Asahi Glass Co., Ltd., fluorine compound)

A-9:KP541(信越化學公司製造,矽系化合物) A-9: KP541 (manufactured by Shin-Etsu Chemical Co., Ltd., silicon-based compound)

A-10:戴傲寧(Daionin)THV(3M公司製造,氟系化合物)所述中,脫模層構成三維交聯體的脫模成分為A-1~A-4。 A-10: In the Daionin THV (manufactured by 3M, a fluorine-based compound), the release components constituting the three-dimensional crosslinked body of the release layer are A-1 to A-4.

[溶劑] [Solvent]

S-1:全氟己烷(和光純藥公司製造) S-1: Perfluorohexane (manufactured by Wako Pure Chemical Industries, Ltd.)

S-2:1-甲氧基-2-丙基乙酸酯 S-2: 1-methoxy-2-propyl acetate

S-3:CT-Solv180(AGC製造) S-3: CT-Solv180 (manufactured by AGC)

S-4:甲基乙基酮 S-4: methyl ethyl ketone

根據所述結果,實施例1~實施例35的暫時接著膜的接著性、剝離性、耐化學性均良好。另外,孔隙少。 Based on the results, all of the temporary adhesive films of Examples 1 to 35 had good adhesion, peelability, and chemical resistance. In addition, there are few pores.

另一方面,比較例1~比較例9於接著性、剝離性、耐化學性的至少一個以上的項目中為實用水準以下。 On the other hand, Comparative Examples 1 to 9 are below practical levels in at least one or more items of adhesion, peelability, and chemical resistance.

Claims (21)

一種暫時接著膜,具有接著區域、及所述接著區域的表面上的脫模區域,其中所述接著區域包括含有雜環的樹脂及交聯成分,所述含雜環的樹脂包含選自聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚苯并咪唑樹脂及聚苯并噁唑樹脂中的至少一種,且所述交聯成分包括馬來醯亞胺樹脂及含量為0質量%~0.5質量%具有環氧基的化合物,並且所述接著區域自25℃起以10℃/min升溫時的400℃下的質量減少率為1質量%以下,且對25℃的N-甲基吡咯啶酮的溶解度為1g/100g溶劑以下。A temporary bonding film having a bonding region and a release region on a surface of the bonding region, wherein the bonding region includes a heterocyclic-containing resin and a cross-linking component, and the heterocyclic-containing resin includes a resin selected from polyfluorene At least one of imine resin, polyfluorene imine resin, polybenzimidazole resin, and polybenzoxazole resin, and the crosslinking component includes maleimide resin and the content is 0% by mass to 0.5 A compound having an epoxy group in mass%, and the mass reduction rate at 400 ° C when the bonding region is heated at 10 ° C / min from 25 ° C to 1% by mass or less, and to 25 ° C N-methylpyrrolidine The solubility of the ketone is 1 g / 100 g or less of the solvent. 如申請專利範圍第1項所述的暫時接著膜,其中所述含雜環的樹脂為對選自γ-丁內酯、環戊酮、N-甲基吡咯啶酮、環己酮、二醇醚、二甲基亞碸及四甲基脲中的至少一種溶劑的25℃下的溶解度為10g/100g溶劑以上的聚醯亞胺樹脂。The temporary adhesive film according to item 1 of the scope of patent application, wherein the heterocyclic-containing resin is a pair selected from γ-butyrolactone, cyclopentanone, N-methylpyrrolidone, cyclohexanone, and diol. Polyimide resin having a solubility at 25 ° C. of at least one of ether, dimethylimide, and tetramethylurea at 10 ° C./100 g of a solvent. 如申請專利範圍第1項或第2項所述的暫時接著膜,其中所述馬來醯亞胺樹脂為雙馬來醯亞胺樹脂。The temporary adhesive film according to item 1 or item 2 of the patent application scope, wherein the maleimide resin is a bismaleimide resin. 如申請專利範圍第1項或第2項所述的暫時接著膜,其中所述接著區域所含的所述交聯成分的50質量%~100質量%為所述馬來醯亞胺樹脂。The temporary adhesive film according to item 1 or item 2 of the patent application scope, wherein 50% to 100% by mass of the crosslinking component contained in the adhesive region is the maleimide resin. 如申請專利範圍第1項至第2項中任一項所述的暫時接著膜,其中所述接著區域更含有熱聚合起始劑。The temporary adhesive film according to any one of claims 1 to 2, wherein the adhesive region further contains a thermal polymerization initiator. 如申請專利範圍第5項所述的暫時接著膜,其中所述熱聚合起始劑的一分鐘半衰期溫度為130℃~300℃。The temporary adhesive film according to item 5 of the patent application scope, wherein the one-minute half-life temperature of the thermal polymerization initiator is 130 ° C to 300 ° C. 如申請專利範圍第5項所述的暫時接著膜,其中所述熱聚合起始劑為有機過氧化物。The temporary adhesive film according to item 5 of the patent application scope, wherein the thermal polymerization initiator is an organic peroxide. 如申請專利範圍第1項至第2項中任一項所述的暫時接著膜,其中所述脫模區域包括含有選自氟原子及矽原子中的至少一種的化合物。The temporary adhesive film according to any one of claims 1 to 2, wherein the release region includes a compound containing at least one selected from a fluorine atom and a silicon atom. 如申請專利範圍第1項至第2項中任一項所述的暫時接著膜,其中所述脫模區域含有氟系矽烷偶合劑。The temporary adhesive film according to any one of claims 1 to 2, wherein the demolding region contains a fluorine-based silane coupling agent. 一種積層體,於如申請專利範圍第1項至第9項中任一項所述的暫時接著膜的脫模區域側的表面上具有元件晶圓。A laminated body having an element wafer on a surface on the side of a release region of a temporarily-adhesive film according to any one of claims 1 to 9 of the scope of patent application. 一種暫時接著用組成物,含有:含雜環的樹脂,包含選自聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚苯并咪唑樹脂及聚苯并噁唑樹脂中的至少一種;交聯成分;以及溶劑,且所述交聯成分的50質量%~100質量%為馬來醯亞胺樹脂,0質量%~0.5質量%為具有環氧基的化合物。A composition for temporary adhesion, comprising: a heterocyclic-containing resin including at least one selected from the group consisting of polyimide resin, polyimide resin, polybenzimidazole resin, and polybenzoxazole resin; A crosslinking component; and a solvent, and 50% to 100% by mass of the crosslinking component is a maleimide resin, and 0% to 0.5% by mass is a compound having an epoxy group. 如申請專利範圍第11項所述的暫時接著用組成物,其中所述含雜環的樹脂為對選自γ-丁內酯、環戊酮、N-甲基吡咯啶酮、環己酮、二醇醚、二甲基亞碸及四甲基脲中的至少一種溶劑的25℃下的溶解度為10g/100g溶劑以上的聚醯亞胺樹脂。The composition for temporary bonding according to item 11 of the scope of the patent application, wherein the heterocyclic-containing resin is a compound selected from the group consisting of γ-butyrolactone, cyclopentanone, N-methylpyrrolidone, cyclohexanone, Polyimide resin having a solubility at 25 ° C. of at least one solvent of glycol ether, dimethylimide, and tetramethylurea of 10 g / 100 g or more of a solvent. 如申請專利範圍第11項或第12項所述的暫時接著用組成物,其中所述馬來醯亞胺樹脂為雙馬來醯亞胺樹脂。The composition for temporary bonding according to item 11 or item 12 of the scope of patent application, wherein the maleimide resin is a bismaleimide resin. 如申請專利範圍第11項或第12項所述的暫時接著用組成物,更含有熱聚合起始劑。The composition for temporary bonding as described in item 11 or 12 of the scope of patent application, further contains a thermal polymerization initiator. 如申請專利範圍第14項所述的暫時接著用組成物,其中所述熱聚合起始劑的一分鐘半衰期溫度為130℃~300℃。The composition for temporary bonding according to item 14 of the scope of the patent application, wherein the one-minute half-life temperature of the thermal polymerization initiator is 130 ° C to 300 ° C. 如申請專利範圍第15項所述的暫時接著用組成物,其中所述熱聚合起始劑為有機過氧化物。The composition for temporary bonding according to item 15 of the scope of application for patent, wherein the thermal polymerization initiator is an organic peroxide. 如申請專利範圍第11項或第12項所述的暫時接著用組成物,更含有脫模成分。The temporary bonding composition as described in claim 11 or 12, further contains a release component. 如申請專利範圍第17項所述的暫時接著用組成物,其中所述脫模成分包括含有選自氟原子及矽原子中的至少一種的化合物。The composition for temporary bonding according to item 17 of the scope of the patent application, wherein the mold release component includes a compound containing at least one selected from a fluorine atom and a silicon atom. 如申請專利範圍第17項所述的暫時接著用組成物,其中所述脫模成分為氟系矽烷偶合劑。The temporary bonding composition according to item 17 of the scope of application for a patent, wherein the mold release component is a fluorine-based silane coupling agent. 一種元件製造方法,包括塗佈如申請專利範圍第11項至第19項中任一項所述的暫時接著用組成物的步驟。A method for manufacturing an element, comprising the step of applying a composition for temporary bonding as described in any one of claims 11 to 19 of the scope of patent application. 一種套組,其為用以形成暫時接著膜的套組,所述暫時接著膜具有接著區域、及所述接著區域的表面上的脫模區域,並且所述接著區域自25℃起以10℃/min升溫時的400℃下的質量減少率為1質量%以下,且對25℃的N-甲基吡咯啶酮的溶解度為1g/100g溶劑以下,並且所述套組包含:如申請專利範圍第11項至第19項中任一項所述的暫時接著用組成物、與含有脫模成分及溶劑的脫模區域形成用組成物。A kit for forming a temporary bonding film having a bonding region and a mold release region on a surface of the bonding region, and the bonding region is 10 ° C from 25 ° C. The mass reduction rate at 400 ° C at a temperature rise per minute is 1% by mass or less, and the solubility to 25 ° C N-methylpyrrolidone is 1g / 100g or less of a solvent, and the kit includes: The composition for temporary adhesion according to any one of items 11 to 19, and the composition for forming a mold release region containing a mold release component and a solvent.
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