TWI620239B - Method of dicing a semiconductor wafer, and dicing tape for processing a semiconductor using the same - Google Patents

Abstract

A dicing method for a semiconductor wafer and a dicing tape for semiconductor processing. The dicing method for the semiconductor wafer includes the following steps: (a) bonding a supporting member to a circuit surface side of the semiconductor wafer through an adhesive; (b) Thin processing is performed on the back surface on the opposite side of the circuit surface of the wafer; (c) a dicing tape having at least an ultraviolet-curable adhesive layer is adhered to the back surface on the opposite side of the circuit surface of the wafer; (d) the wafer is free from The adhesive layer and the supporting member are peeled off; (e) the residue of the adhesive on the semiconductor wafer is cleaned using an organic solvent; and (f) the semiconductor wafer is cut off and formed into wafers; in step (e) above Previously, the adhesive layer in the region where the semiconductor wafer was not adhered to the dicing tape had been hardened by ultraviolet irradiation.

Description

Dicing method for semiconductor wafer and dicing tape for semiconductor processing used therefor

The present invention relates to a dicing method of a semiconductor wafer in a step of manufacturing a semiconductor device and a dicing tape for semiconductor processing used therefor. In more detail, this invention relates to the dicing method of the semiconductor wafer in the manufacturing process of the semiconductor element using a support member, and the dicing tape for semiconductor processing used for it.

When thin processing is performed on the back surface of a semiconductor wafer on which a wiring pattern is formed, in order to protect the pattern surface of the semiconductor wafer and fix the semiconductor wafer itself, generally, a protective sheet is attached to the pattern surface, and then the back surface is Perform thin processing such as grinding and grinding. As such a protective sheet, a protective sheet formed by coating an acrylic adhesive or the like on a substrate made of a plastic film is generally used. However, in recent years, due to the thinness and miniaturization of IC cards or mobile phones, the thickness of semiconductor wafers must also reach the level of 50 μm or less. In the previous step of using a protective tape, it was not possible to support the semiconductor wafer with the protective tape alone. Warping of the semiconductor wafer after grinding, or deflection when stored in a wafer cassette, etc., makes it difficult to handle the semiconductor wafer, and it is difficult to automate the processing or transportation.

In order to solve the above problems, a method has been proposed in which a glass substrate, a ceramic substrate, a silicon wafer substrate, or the like is bonded to a semiconductor wafer through an adhesive to provide support to the semiconductor wafer (see According to Patent Document 1). Supporting members such as glass substrates, ceramic substrates, or silicon wafer substrates are used instead of the protective sheet, whereby the semiconductor wafers are greatly improved in rationality, and the transportation can be automated.

During the processing of a semiconductor wafer using a support member, the following steps are required, that is, after the back surface of the semiconductor wafer is ground, the support member is peeled from the semiconductor wafer. The peeling of the supporting member is generally performed by the following methods, for example: (1) dissolving or decomposing the adhesive between the supporting member and the semiconductor wafer with a chemical, (2) bonding the adhesive between the supporting member and the semiconductor wafer Photodecomposition is performed by irradiating laser light, but there are problems such as: for the method (1), it takes a long time to disperse chemicals into the adhesive, and for the method (2), it takes a long time This method is used to perform laser scanning. In addition, in either method, a special substrate is required as a supporting member.

Therefore, a method has been proposed in which the support member is peeled physically and mechanically when a peeling opportunity occurs when the support member is peeled (see Patent Documents 2 and 3). This method does not require the long-term treatment required in the previous dissolution or decomposition of the adhesive using chemicals or the photodecomposition by laser scanning, and can be processed in a short time. After the support member is peeled from the semiconductor wafer, the residue of the adhesive on the semiconductor wafer generated when the support member is peeled off is cleaned by using chemicals.

Then, the semiconductor wafer peeled from the support member is transferred to a dicing step and cut into individual wafers. However, as described above, if the thickness of the semiconductor wafer is 50 μm or less, the individual semiconductor wafers are Warping of semiconductor wafers, or deflection when stored in a wafer cassette, etc., makes it very difficult to handle semiconductor wafers. Therefore, after grinding the back surface of a semiconductor wafer and before peeling the support member First, bond the dicing tape to the semiconductor The grinding surface of the wafer, and the semiconductor wafer is supported and fixed to the ring frame. Therefore, in a state where the semiconductor wafer is adhered to the dicing tape, the adhesive residue on the semiconductor wafer generated when the supporting member is peeled off is cleaned with chemicals, and there is a problem that the dicing tape has high solvent resistance.

In order to solve this problem, a proposal has been made to include an energy-ray-curable acrylic resin composition in the adhesive layer and set the gel fraction to 70% or more (see Patent Document 4). However, this adhesive tape for semiconductor processing has been proposed. Since the material is extremely limited, there are cases where it is difficult to exhibit the characteristics originally required for the dicing tape, that is, the adhesive force that suppresses the scattering of the wafer only during dicing, or the easy peelability when picked up.

In addition, a method for forming a circuit element has been proposed, which involves attaching a supporting member to a circuit surface of a wafer on which a circuit is formed via an adhesive, grinding the back surface of the wafer, and forming the back surface of the thinned substrate The through-electrode is then cut to form small pieces into individual elements, and a cutting tape is adhered to the through-electrode side of the small piece of the element. The above-mentioned cutting tape is irradiated with ultraviolet rays, and then supplied to the thickness direction of the support plate. The solvent of the plurality of through holes formed thereon comes into contact with the above-mentioned adhesive agent between the support plate and the substrate, and the adhesive agent is dissolved to peel the support plate from the substrate (see Patent Document 5).

However, for the above method, the steps are complicated, for example, it is necessary to re-adhere the cutting tape, and it takes a long time to disperse the chemicals into the adhesive, and the problem in the above Patent Document 1 has not been solved. Furthermore, there are the following Situation: Since the adhesive force of the dicing tape to the semiconductor wafer is reduced due to ultraviolet radiation, as in Patent Documents 2 and 3, when the step of mechanically peeling the supporting member from the semiconductor wafer is performed, it is not only the supporting member and the semiconductor Stripping occurs between the wafers, and also occurs between the semiconductor wafer and the dicing tape, resulting in irremovable To support component issues. In addition, even if the supporting member can be removed, there is a problem that the adhesive force during dicing is insufficient, and the wafer is scattered.

[Patent Document 1] Japanese Patent Laid-Open No. 2006-135272

[Patent Document 2] Japanese Patent Publication No. 2011-510518

[Patent Document 3] US Patent Application Publication No. 2011/0272092

[Patent Document 4] Japanese Patent Laid-Open No. 2009-224621

[Patent Document 5] Japanese Patent Laid-Open No. 2009-177033

The object of the present invention is to provide a dicing method for a semiconductor wafer that solves the above-mentioned problems and a dicing tape for semiconductor processing used therefor. In a manufacturing step of a semiconductor element using a supporting member, even if a peeling liquid is splashed on an adhesive In this case, the semiconductor element is not dissolved by dissolving the adhesive, and it can withstand physical and mechanical peeling of the supporting member.

The present inventors have conducted intensive studies in order to achieve the above-mentioned object. As a result, in a method for manufacturing a semiconductor element using a support member, the support member is adhered to the circuit surface side of the semiconductor wafer via an adhesive, and will have an ultraviolet curing type. The dicing tape of the adhesive layer is used as a dicing tape adhered to the surface obtained by performing a thin processing on the back surface of the semiconductor wafer. As a result, various studies have been made on the use of the chemical and physical characteristics of the adhesive layer. The effect is to use the change in the solubility with respect to the organic solvent before and after the hardening-type adhesive layer is hardened. This invention is an invention based on the said knowledge.

That is, the present invention solves the above problems by the following methods.

(1) A dicing method for a semiconductor wafer, comprising the following steps: (a) The supporting member is bonded to the circuit surface side of the semiconductor wafer through an adhesive; (b) The back surface of the semiconductor wafer on the opposite side to the circuit surface is thinly processed; (c) It has at least a UV-curable adhesive layer The dicing tape is adhered to the back surface on the opposite side of the circuit surface of the semiconductor wafer; (d) the semiconductor wafer is peeled from the adhesive layer and the supporting member; (e) the organic solvent is used for the semiconductor wafer. Cleaning the residue of the adhesive; and (f) cutting the semiconductor wafer to form a wafer; and characterized in that: before the step (e), the adhesive in a region where the semiconductor wafer is not adhered in the dicing tape; The layer has hardened due to ultraviolet radiation.

(2) The dicing method for a semiconductor wafer according to (1), wherein the hardening by irradiating ultraviolet rays is performed after step (c), (h1) irradiating ultraviolet rays from the semiconductor wafer side, (h2 ) Irradiate ultraviolet rays through a mask from the side of the dicing tape, or (h3) before step (c), irradiate ultraviolet rays on the adhesive layer portion of the region where the semiconductor wafer is not adhered via the mask.

(3) The method for dicing a semiconductor wafer according to (1) or (2), wherein the gel fraction before the adhesive of the dicing tape is hardened is 20% or more.

(4) The dicing method for a semiconductor wafer according to any one of (1) to (3), wherein the resin component of the radiation-curable resin composition of the adhesive is a (meth) acrylic copolymer, A group containing a (meth) acrylic fluorenyloxy group is bonded to a polymer branch chain or a main chain via an urethane bond.

(5) A dicing tape for semiconductor processing, which is formed on at least one surface of a base resin film The adhesive layer is characterized in that the adhesive layer is a radiation-curable adhesive layer, and the adhesive layer in the region where the semiconductor wafer and the dicing frame are not adhered is hardened by ultraviolet radiation in advance.

(6) The dicing tape for semiconductor processing according to (5), wherein the resin component of the radiation-curable resin composition of the adhesive is a (meth) acrylic copolymer, which is in a polymer branch or main chain, A group containing a (meth) acrylic fluorenyloxy group is bonded via an amine ester bond.

According to the present invention, it is possible to provide a dicing method for a semiconductor wafer and a dicing tape for semiconductor processing used therefor. In a manufacturing step of a semiconductor element using a supporting member, even when a peeling liquid is splashed on an adhesive, It can dissolve the adhesive and contaminate the semiconductor device, and can withstand physical and mechanical peeling of the supporting member.

The above-mentioned and other features and advantages of the present invention will be apparent from the following description as appropriate with reference to the accompanying drawings.

1‧‧‧ semiconductor wafer

2‧‧‧ Adhesive

3‧‧‧ supporting components

4‧‧‧ cutting tape

5‧‧‧ UV-curable adhesive layer (before curing)

6‧‧‧ UV-curable adhesive layer (after hardening)

7‧‧‧ substrate film

8‧‧‧Ring frame (cutting frame)

9‧‧‧ UV

10‧‧‧Mask

11‧‧‧organic solvents

12‧‧‧Semiconductor wafer

13‧‧‧Pick up needle

14‧‧‧ cutting tape

15‧‧‧ isolation film

Fig. 1 is a schematic cross-sectional view schematically showing a first embodiment of the present invention.

Fig. 2 is a diagram showing the overall steps of the first embodiment of the present invention.

FIG. 3 is a schematic plan view of a first embodiment of the present invention in which a support member is bonded to a semiconductor wafer via an adhesive and fixed to a ring frame.

FIG. 4 is a schematic cross-sectional view schematically showing a dicing tape for semiconductor processing previously cured by ultraviolet irradiation according to a second embodiment of the present invention.

Fig. 5 is a diagram showing the overall steps of a second embodiment of the present invention.

The dicing method of a semiconductor wafer of the present invention includes at least the following steps. Prior to the step (e), the adhesive layer in a region where the semiconductor wafer is not adhered in the dicing tape described below is hardened by ultraviolet irradiation.

(a) The supporting member is bonded to the circuit surface side of the semiconductor wafer through an adhesive; (b) The back surface of the semiconductor wafer on the opposite side to the circuit surface is thinly processed; (c) It has at least a UV-curable adhesive layer The dicing tape is adhered to the back surface on the opposite side of the circuit surface of the semiconductor wafer; (d) the semiconductor wafer is peeled from the adhesive layer and the supporting member; (e) the organic solvent is used for the semiconductor wafer. The residue of the adhesive is cleaned; and (f) the semiconductor wafer is cut to form a wafer.

Here, for the hardening by the above-mentioned ultraviolet irradiation, it is preferable that after the step (c), (h1) the ultraviolet light is irradiated from the semiconductor wafer side, and (h2) is irradiated from the dicing tape side through a mask. Ultraviolet rays, or (h3), before the step (c), is irradiated with ultraviolet rays through a mask to a part of the adhesive layer in a region where the semiconductor wafer is not adhered, thereby curing.

Hereinafter, embodiments of the present invention will be described in detail based on the drawings. In the following description and drawings, the same reference numerals are given to constituent elements having substantially the same functional configuration, and redundant descriptions are omitted here.

(First Embodiment)

First, referring to FIGS. 1 to 3, a first embodiment of a method (dicing method) for processing a semiconductor wafer according to the present invention will be described.

FIG. 1 is a schematic sectional view showing a processing method of a semiconductor wafer 1 according to the first embodiment. FIG. 2 is an overall step diagram, and is a cross-sectional view of a semiconductor wafer 1 fixed to a ring frame (dicing frame) 8.

The semiconductor wafer 1 of the present invention is a silicon wafer or the like having a pattern surface (not shown) on which a circuit or the like is formed, and a support member 3 is bonded to the circuit surface side through an adhesive (adhesive layer) 2 [FIG. 2 (a)], and then transfer to the back grinding (back grinding) step [Fig. 2 (b)].

After the back grinding (back grinding) step is completed, the UV-curable adhesive layer 5 (before hardening) 5 of the dicing tape 4 is adhered to the back surface of the circuit surface of the semiconductor wafer 1, and the dicing tape (dicing tape for semiconductor processing) 4 An ultraviolet curing adhesive layer (before curing) 5 is adhered to the lower surface of the ring frame 8 [FIG. 2 (c), FIG. 1]. The ring frame 8 is a ring-shaped flat plate and is made of metal or resin, especially stainless steel. At this time, the ultraviolet curing type adhesive layer (before curing) 5 of the dicing tape 4 is in a state before being cured by ultraviolet irradiation.

After the dicing tape 4 is adhered, the region of the dicing tape 4 where the ultraviolet curing adhesive layer (before curing) 5 between the semiconductor wafer 1 and the ring frame 8 is exposed is hardened by irradiating ultraviolet rays (9), so that A UV-curable adhesive layer (after curing) 6 is formed [FIG. 2 (d), FIG. 1].

The support member 3 is peeled off [FIG. 2 (e)]. The step of peeling the support member 3 and the step of irradiating ultraviolet rays to the region where the UV-curable adhesive layer (before hardening) 5 is exposed in the dicing tape 4 can also be reversed. However, when the support member 3 is peeled off, the organic solvent 11 is used. In this case, the ultraviolet (9) irradiation step is preferably performed first.

The adhesive 2 remaining on the circuit surface of the semiconductor wafer 1 is washed with an organic solvent 11 to remove it [FIG. 2 (f), FIG. 2 (g)).

Dividing the semiconductor wafer 1 into individual semiconductor wafers by a dicing step 12 [Figure 2 (h)].

The region where the semiconductor wafer 12 (semiconductor wafer 1) is bonded in the dicing tape 4 is irradiated with ultraviolet rays 9 to thereby harden it, thereby forming an ultraviolet-curable adhesive layer (after curing) 6 [FIG. 2 (i )].

The semiconductor wafer 12 is picked up by the pick-up pin 13 [FIG. 2 (j)].

(Second Embodiment)

First, a second embodiment of a processing method (dicing method) of a semiconductor wafer 1 according to the present invention will be described with reference to FIGS. 4 and 5.

FIG. 4 is a schematic cross-sectional view of a dicing tape (dicing tape for semiconductor processing) 14 of the second embodiment, and FIG. 5 is an overall step diagram of the second embodiment, and is a schematic cross-sectional view showing a processing method of the semiconductor wafer 1. .

The dicing tape (dicing tape for semiconductor processing) 14 [FIG. 4 (a)] of the present invention is a dicing tape for semiconductor processing in which an adhesive layer is formed on at least one surface of a base film (base resin film) 7. The adhesive layer is a radiation-curable adhesive layer. In the adhesive layer, the adhesive layer in a region where the semiconductor wafer 1 and the ring frame (dicing frame) 8 are not adhered is hardened in advance by ultraviolet irradiation.

The ordinary ultraviolet curing cutting tape 4 can be irradiated with ultraviolet rays (9) through a mask 10 that blocks ultraviolet rays 9, thereby producing a cutting tape 14 in which a part of the radiation-curable adhesive layer is hardened by ultraviolet irradiation in advance [Fig. 4 (b) ~ Figure 4 (d)]. Ultraviolet rays 9 can be irradiated from the base material side of the dicing tape 4 through the mask 10, and ultraviolet rays 9 can also be radiated from the side of the separator 15 through the mask 10.

The semiconductor wafer 1 of the present invention has a pattern in which a circuit or the like is formed on one side. Surface (not shown) silicon wafer, etc., the support member 3 is bonded to the circuit surface side through the adhesive 2 [Fig. 5 (a)], and then transferred to the back grinding (back grinding) step [Fig. 5 (b)] .

After the back grinding (back grinding) step is completed, the UV-curable adhesive layer 5 of the dicing tape 14 (before hardening) 5 is adhered to the back surface of the circuit surface of the semiconductor wafer 1, and the UV-curable adhesive layer of the dicing tape 14 is bonded. (Before hardening) 5 is bonded to the lower surface of the ring frame 8 [FIG. 5 (c)]. The ring frame 8 is a ring-shaped flat plate and is made of metal or resin, especially stainless steel. At this time, the UV-curable adhesive layer 5 (before hardening) 5 of the dicing tape 14 is in a state before being hardened by being irradiated with ultraviolet rays (9), and the UV-curable adhesive layer (after hardening) 6 is being irradiated by ultraviolet rays (9). After hardening.

After the support member 3 is peeled off [FIG. 5 (d)], the adhesive 2 remaining on the circuit surface of the semiconductor wafer 1 is cleaned with an organic solvent 11 to remove it [FIG. 5 (e), FIG. 5 (f )].

The semiconductor wafer 1 is divided into individual semiconductor wafers 12 by a dicing step [FIG. 5 (g)].

The region where the semiconductor wafer 12 (semiconductor wafer 1) is bonded in the dicing tape 14 is hardened by irradiating ultraviolet rays (9), thereby forming an ultraviolet-curable adhesive layer (after curing) 6 [FIG. 5 (h)].

The semiconductor wafer 12 is picked up by the pick-up pin 13 [FIG. 5 (i)].

Next, the supporting members will be described.

(Support member)

The supporting member 3 is composed of a material selected from the group consisting of silicon, sapphire, crystal, metal (for example, aluminum, copper, steel), various glasses, and ceramics. The surface of the support member 3 to which the adhesive is attached may also include other materials stacked. For example, silicon nitride can also be deposited on a silicon wafer. This can change the joining characteristics.

(Attachment of supporting members)

When the support member 3 is attached, after the adhesive solution of the following adhesive agent 2 is applied to the circuit formation surface of the semiconductor wafer 1, the applied adhesive agent 2 is dried using an oven or a hot plate. In addition, in order to obtain the necessary thickness of the adhesive agent (adhesive agent layer) 2, the application of the adhesive agent solution and the pre-drying may be repeated multiple times.

In addition, when the adhesive liquid of the adhesive 2 is applied to the circuit formation surface of the semiconductor wafer 1, there are cases in which, before the adhesive liquid of the adhesive 2 is applied, as in Japanese Patent No. 2009-528688. As shown in the bulletin, a plasma polymer separation layer is deposited on the circuit surface of the semiconductor wafer 1, thereby peeling and supporting the circuit formation surface of the semiconductor wafer 1 and the plasma polymer separation layer when the supporting member is peeled off. member.

In addition, there is a case where if the adhesive solution is applied to the circuit formation surface of the semiconductor wafer 1 by a spin coater, a bead-shaped portion may be formed at the peripheral edge portion. In this case, it is preferable to remove the bead portion with a solvent before the adhesive solution is pre-dried.

(Adhesive)

In the present invention, a commercially available adhesive can be used as the adhesive 2. Examples include Wafer BOND ^TM material (sold by Brewer Science, Inc. of Rolla, Missouri) (Wafer BOND ^TM HT 10.10 for sliding bonding processes, Wafer BOND ^TM CR200 for chemical bonding processes), or WACKER manufactured by Berghausen The material is ELASTOSIL LR 3070 and so on. In addition, resins or polymers that exhibit high adhesion to semiconductor materials, glass, or metals are also preferred. Particularly preferred examples include: (1) high solid content ultraviolet rays such as reactive epoxy and acrylic (UV) hardening resin; (2) thermosetting resin such as two-liquid epoxy adhesive or silicon adhesive or silicone rubber adhesive; (3) thermoplastic acrylic resin, styrene resin, vinyl halide ( Fluorine-free) resins or resins based on polyamines, polyimides, polyfluorenes, polyetherfluorenes, or polyurethanes to melt polymers or copolymers of vinyl esters Those that are coated in a state or as a solution coating film and dried by calcination after coating to make the supporting member and the semiconductor wafer denser; (4) Cyclic olefins, polymer Olefin rubbers (such as polyisoprene) or hydrocarbon-based tackifying resins.

Since water is used during grinding, the adhesive 2 is preferably a water-insoluble polymer compound, and more preferably, the adhesive 2 has a high softening point. Examples of such polymer compounds include phenolic resins, epoxy resins, amine resins, silicone resins, acrylic resins, amine ester resins, polystyrene resins, polyvinyl ether resins, polyvinyl acetate and modified products thereof, or A polymer compound obtained by dissolving these mixtures in a solvent. Among them, an acrylic resin material is preferred because it has a heat resistance of 200 ° C. or higher, generates less gas, and is less prone to cracks. In addition, a phenolic resin is also preferred according to the following. This content means that the phenolic resin does not cause scum. Although it is inferior to acrylic resin materials in terms of heat resistance, gas generation amount and crack generation, it has a high softening point. In addition, in terms of subsequent peeling, it is easy to peel using a solvent. In addition, plasticizers can also be mixed to prevent cracks during film formation.

In addition, as the solvent, a solvent that can dissolve the resin and uniformly form a film on a wafer is preferable, and ketones (for example, acetone, methyl ethyl ketone, cyclohexane, methyl isobutyl ketone, Methyl isoamyl ketone, 2-heptanone, etc.), polyvalent alcohols or derivatives thereof (e.g., ethylene glycol, propylene glycol, diethylene glycol, ethylene glycol monoacetate, propylene glycol monoacetate, Diethylene glycol monoacetate or monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether, or monophenyl ether, etc.), cyclic ethers (such as dioxane) , Esters (e.g. ethyl lactate, methyl acetate, Ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, and ethyl ethoxypropionate, etc.) or aromatic hydrocarbons (such as benzene, toluene, and xylene) Wait). Among these, the above-mentioned polyvalent alcohols or derivatives thereof are particularly preferred.

These solvents may be used alone, or two or more solvents may be used in combination. Moreover, you may add an active agent to these solvents in order to improve the uniformity of a film thickness.

(Cleaning liquid for adhesive residue)

As a cleaning solution for removing adhesive residues remaining on the semiconductor wafer 1 after the adhesive 2 and the supporting member 3 are peeled from the semiconductor wafer 1, in addition to the organic solvent used in the adhesive 2 described above, Monovalent ethanol (such as methanol, ethanol, propanol, isopropanol, and butanol), lactones (such as γ-butyrolactone, etc.), and lactams (such as γ-butyrolactone) can also be used Amines, etc.), ethers (for example, diethyl ether or anisole, etc.), and amidines (for example, dimethylformamide, dimethylacetamide, etc.). Among these cleaning solutions, ketones (preferably methyl isobutyl ketone) and monovalent ethanol are preferred, and methanol is particularly preferred because of its fast dissolution rate.

(Slicing Tape for Semiconductor Processing)

The dicing tape (dicing tape) 4 or 14 for semiconductor processing is not particularly limited as long as it has an ultraviolet-curable adhesive, and a previously known dicing tape can be used without particular limitation, but the support member 3 is peeled from the semiconductor wafer 1 In this case, the dicing tape 4 needs an adhesive force before ultraviolet curing to such an extent that it does not peel from the semiconductor wafer 1. More preferably, the adhesive strength of the cutting tape 4 before UV curing is preferably 1.0N / 25mm or more, and more preferably 2.0N / 25mm or more.

(Substrate resin film)

As long as the material constituting the base resin film (base film) 7 has ultraviolet permeability, a material that has been previously known can be used without particular limitation.

Examples of the material constituting the base film 7 include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, Ethylene-acrylic acid ethyl copolymers, ethylene-acrylic acid methyl copolymers, ethylene-acrylic acid copolymers, ionomers, and other individual polymers or copolymers of α-olefins, or mixtures thereof, polyurethanes, styrene-ethylene- Thermoplastic elastomers such as butene or pentene-based copolymers, polyamide-polyol copolymers, and mixtures thereof. The base material film 7 may be a base material film in which two or more materials selected from the group of these materials are mixed, or a base material film in which these materials are single-layered or multi-layered. The thickness of the base film 7 is not particularly limited and can be appropriately set, but is preferably 50 μm to 200 μm.

(UV-curable adhesive layer)

A UV-curable adhesive layer can be coated on the base film 7 to produce a UV-curable adhesive layer. The ultraviolet-curable adhesive layer is not particularly limited, and a conventionally well-known ultraviolet-curable adhesive layer may be used without particular limitation, but it must have a holding property to such an extent that the semiconductor wafer 12 does not peel off during dicing, or it must have easy retention. The releasability is such that the peeling is performed between the ultraviolet-curable adhesive layer and the semiconductor wafer 12 during pickup.

As the radiation-curable resin composition used for the ultraviolet-curable adhesive layer, a radiation-curable resin composition having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used. For example, as the radiation-curable resin composition, in addition to using a radiation-curable resin composition having a carbon-carbon double bond in a polymer branch or main chain or at the end of the main chain, it can also be exemplified by mixing in a general adhesive. A radiation-curable adhesive made of a radiation-curable resin such as a monomer component or an oligomer component that is radiation-curable.

The radiation-curable resin composition used for the ultraviolet-curable adhesive layer is not particularly limited Examples include: amine (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, polyether (meth) acrylate, (meth) acrylic oligomer Products and itaconic acid oligomers have functional groups such as hydroxyl or carbonyl oligomers.

As a radiation-curable resin composition using a compound having a carbon-carbon double bond in a polymer branch, for example, the following (meth) acrylic copolymer is preferred as the main component, and the gel fraction is 20 % Or more, the (meth) acrylic copolymer has at least a group containing a radiation-curable carbon-carbon double bond and a group containing a hydroxyl group and a carbonyl group in the main chain, respectively. Furthermore, the gel fraction is more preferably 55% or more (preferably 55% to 90%), and even more preferably 60% or more (preferably 60% to 85%). Furthermore, it is preferable to contain a polymer obtained by an addition reaction of the compound (A) and the compound (B). The compound (A) has a radiation-hardenable carbon-carbon double bond having an iodine value of 0.5 to 20 in the molecule. The bonded compound and the compound (B) are at least one compound selected from the group consisting of polyisocyanates, melamine-formaldehyde resins, and epoxy resins.

The compound (A) which is one of the main components of an ultraviolet curable adhesive layer is demonstrated.

In terms of iodine value, the preferable introduction amount of the radiation-hardening carbon-carbon double bond of the compound (A) is 0.5 to 20, and more preferably 0.8 to 10. If the iodine value is 0.5 or more, the effect of reducing the adhesive force after radiation irradiation can be obtained. If the iodine value is 20 or less, the fluidity of the adhesive after radiation irradiation is sufficient, and the element gap after extension can be sufficiently obtained. Therefore, it is possible to suppress the problem that it is difficult to recognize the image of each element during pickup. Furthermore, the compound (A) itself has stability and is easy to produce.

The glass transition temperature (Tg) of the compound (A) is preferably -70 ° C to 0 ° C, and more preferably -66 ° C to -28 ° C. If Tg is -70 ° C or higher, the heat resistance to heat generated by irradiation with radiation is sufficient, and if Tg is 0 ° C or lower, the following effects can be sufficiently obtained, that is, The scattering of the components after the dicing of the semiconductor wafer 1 having a rough surface state is prevented.

The compound (A) may be a compound produced in any manner. For example, a compound obtained by reacting a compound ((1)) with a compound ((2)) may be used. The compound ((1)) is a (methyl ) A compound having a radiation-curable carbon-carbon double bond and a functional group such as an acrylic copolymer, and the compound ((2)) is a compound having a functional group capable of reacting with the functional group of the compound ((1)) .

Among them, the above-mentioned compound ((1)) having a radiation-curable carbon-carbon double bond and a functional group is a monomer ((1) that enables a radiation-curable carbon-carbon double bond such as an alkyl (meth) acrylate -1) Obtained by copolymerization with a monomer ((1) -2) having a functional group. Regarding the amount of double bonds in the adhesive, the amount of carbon-carbon double bonds contained in about 10 g of the heat-dried adhesive can be quantified by using the mass increase method of bromine addition reaction in the dark in a vacuum.

Examples of the monomer ((1) -1) include hexyl acrylate having 6 to 12 carbon atoms, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, and dodecane Acrylate, and decyl acrylate; or monomers having a carbon number of 5 or less, that is, pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, and methacrylate; Or the same methacrylate and the like.

The more the monomer having a larger carbon number is used as the monomer ((1) -1), the lower the Tg, and therefore, a compound having a desired Tg can be produced. In addition to Tg, in order to improve compatibility and various properties, vinyl acetate, styrene, and the like may be blended in a range of 5% by mass or less of the total mass of the monomer ((1) -1), and Low molecular compounds with carbon-carbon double bonds such as acrylonitrile.

Examples of the functional group possessed by the monomer ((1) -2) include a carbonyl group and a hydroxyl group. Specific examples of the monomer ((1) -2) include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, and the like. Fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, ethylene glycol monoacrylates, ethylene glycol monomethacrylates, N-methylene acrylic acid Ammonium amine, N-methylene methacrylate methacrylate, allyl alcohol, N-alkylamino ethyl acrylate, N-alkylamino ethyl methacrylate, amine acrylate, methylamine Methacrylic acid amines, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride, glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether, and have hydroxyl or carbonyl groups and radiation hardenability A carbon-carbon double bond monomer is obtained by esterifying a part of the isocyanate group of a polyisocyanate compound with an amine.

As the functional group for the compound (2), when the functional group of the compound (1), that is, the monomer ((1) -2) is a carbonyl group or a cyclic acid anhydride group, a hydroxyl group, an epoxy group, etc. may be mentioned. And isocyanate groups; when the functional group is a hydroxyl group, cyclic acid anhydride groups, isocyanate groups, and the like; when the functional group is an amine group, epoxy groups, isocyanate groups, and the like; When the said functional group is an epoxy group, a carbonyl group, a cyclic acid anhydride group, an amino group, etc. are mentioned. Specific examples of these include the same as those listed in the specific examples of the monomer ((1) -2).

Unreacted functional groups remain in the reaction between the compound (1) and the compound (2), and thereby, the properties specified in the present invention can be produced with respect to characteristics such as acid value and hydroxyl value.

In the synthesis of the above-mentioned compound (A), as the organic solvent used in the reaction by solution polymerization, ketone-based, ester-based, ethanol-based, and aromatic-based organic solvents can be used, among which toluene, ethyl acetate, isopropyl Propyl ethanol, benzyl cyrus, ethyl cyrus, acetone, and methyl ethyl ketone are generally good solvents for propylene polymers and have a boiling point of 60 ° C to 120 ° C. Solvents are preferred.

In addition, as a polymerization initiator, a radical generator such as a bisazo system such as α, α′-azobisisobutyronitrile, or an organic peroxide system such as benzamidine peroxide is generally used. In this case, a catalyst and a polymerization inhibitor can be used in combination as necessary, and a compound (A) having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time. The molecular weight is preferably adjusted using a thiol or carbon tetrachloride-based solvent. The above-mentioned reaction is not limited to solution polymerization, and may be other methods such as block polymerization and suspension polymerization.

Although the compound (A) can be obtained in the above manner, the mass average molecular weight of the compound (A) is preferably about 300,000 to 1.2 million. If it is less than 300,000, the cohesive force generated by radiation irradiation will become small, and when the semiconductor wafer 1 is diced, wafer shift is likely to occur, making it difficult to distinguish an image. In order to prevent this wafer shift as much as possible, the mass average molecular weight is preferably 400,000 or more. If the mass average molecular weight exceeds 1.2 million, gelation may occur during synthesis and coating. The mass average molecular weight in the present invention means a mass average molecular weight in terms of polystyrene.

In addition, if the compound (A) has a hydroxyl group having a hydroxyl value of 5 to 100, the risk of pick-up errors can be further reduced by reducing the adhesive force after radiation irradiation, and therefore, it is preferable. The compound (A) preferably has a carbonyl group having an acid value of 0.5 to 30.

Here, if the hydroxyl value of the compound (A) is too low, the effect of reducing the adhesive force after irradiation with radiation is insufficient. If the hydroxyl value of the compound (A) is too high, there is a risk of damaging the adhesive after the radiation. Liquidity tendencies. If the acid value is too low, the effect of improving the recoverability of the tape is insufficient, and if the acid value is too high, the fluidity of the adhesive tends to be impaired.

Second, compounds that are another main component of the UV-curable adhesive layer (B) Explained.

The compound (B) is a compound selected from the group consisting of polyisocyanates, melamine-formaldehyde resins, and epoxy resins. The compound (B) may be used alone or two or more compounds (B) may be used in combination. The compound (B) functions as a cross-linking agent. The cross-linked structure obtained by reacting with the compound (A) or the base film 7 can increase the compound (A) and ( B) Cohesion of the adhesive as the main component.

The polyisocyanates are not particularly limited, and examples thereof include 4,4'-diphenyl diisocyanate, methylphenylene diisocyanate, xylylene diisocyanate, 4,4, -diphenyl ether diisocyanate, Aromatic isocyanates such as 4,4 '-[2,2-bis (4-oxyphenyl) propane] diisocyanate, cyclohexane diisocyanate, 2,2,4-trimethyl-cyclohexane diisocyanate, Isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate, lysine diisocyanate, and lysine triisocyanate. Specifically, CORONATE L (manufactured by Japan Polyurethane Co., Ltd., trade name) can be used.

Specifically, as the melamine-formaldehyde resin, NIKALAC MX-45 (manufactured by Sanwa Chemical Co., Ltd., trade name), MELAN (manufactured by Hitachi Chemical Co., Ltd., trade name), and the like can be used. Further, TETRAD-X (manufactured by Mitsubishi Chemical Corporation, trade name) or the like can be used as the epoxy resin.

The amount of the compound (B) to be added must be selected in such a manner that it reaches 0.1 to 10 parts by mass, preferably 0.4 to 7 parts by mass, with respect to 100 parts by mass of the compound (A). By selecting within the above range, appropriate cohesion can be obtained, and the cross-linking reaction does not proceed eagerly. Therefore, the workability of blending or coating the adhesive is good.

In the present invention, the resin component of the radiation-curable resin composition of the adhesive is (A Group) an acrylic copolymer, and it is preferred that a (meth) acryloxy group-containing group is bonded to the polymer branch or main chain via an amine ester bond.

In addition, it is preferable to include a photopolymerization initiator in the ultraviolet-curable adhesive layer. The photopolymerization initiator is not particularly limited, and a previously known photopolymerization initiator can be used. Examples include diphenyls such as benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, and 4,4'-dichlorobenzophenone. Methyl ketones, acetophenone, diethoxy acetophenone and other acetophenones, 2-ethylanthraquinone, third butyl anthraquinone and other anthraquinones, 2-chlorothioxanthone, benzoin ether, benzoin Isopropyl ether, benzodiazone, 2,4,5-triarylimidazole dimer (rophene dimer), and acridine-based compounds, etc., may be used alone or in combination. Two or more photopolymerization initiators are used. The addition amount of the photopolymerization initiator is preferably 0.1 to 10 parts by mass, and more preferably 0.5 to 5 parts by mass with respect to 100 parts by mass of the compound (A).

Further, if necessary, a radiation hardening adhesive may be blended with a tackifier, an adhesion modifier, a surfactant, or other modifiers. Moreover, you may add an inorganic compound filler suitably. The thickness of the ultraviolet-curable adhesive layer is preferably at least 5 μm, and more preferably 10 μm or more. Here, the upper limit of the thickness of the ultraviolet-curable adhesive layer is not particularly limited, but it is preferably 50 μm or less. The ultraviolet-curable adhesive layer may have a structure in which a plurality of layers are laminated.

[Example]

Next, the present invention will be described in more detail based on examples. Hereinafter, the present invention will be described based on examples, but the present invention is not limited to these examples.

<Production of Basic Cutting Tape>

Basic cutting tapes C1 to C5 were produced in the following manner.

(Cut of cutting tape C1)

Using methyl methacrylate, 2-ethylhexyl acrylate, and hydroxyethyl 2-acrylate as monomer components, copolymerizing the above monomer components in ethyl acetate at a mass ratio of 5: 14: 1, A solution containing a propylene polymer (A1) having a hydroxyl group bonded to its main chain was obtained. Next, to 100 parts by mass of the above-mentioned propylene polymer A1, 50 parts by mass of an ultraviolet-curable oligomer obtained by reacting neopentaerythritol triacrylate and diisocyanate was added as an ultraviolet-curable compound, and each was added 2.5 A mass part of the product name "IRGACURE 651" (manufactured by Ciba Specialty Chemicals) and 1.0 part by mass of a polyisocyanate-based compound (trade name "CORONATE L", manufactured by Japan Polyurethane Industry Co., Ltd.) are used as photopolymerization initiators to obtain ultraviolet curing Type acrylic adhesive solution B1. The resin composition was coated on a polyethylene terephthalate film (PET film) having a thickness of 38 μm so that the dry film thickness was 20 μm, and dried at 110 ° C. for 3 minutes to form an adhesive layer. The adhesive layer was affixed to a 100 μm ethylene-vinyl acetate copolymer film, and then transferred to produce a dicing tape C1.

The gel fraction of the ultraviolet-curable adhesive layer of the dicing tape produced in the above manner was 82%.

(Cut of cutting tape C2)

Using butyl acrylate and hydroxyethyl 2-acrylate as monomer components, the above monomer component was copolymerized in ethyl acetate at a mass ratio of 8: 2 to obtain propylene containing hydroxyl groups bonded to the main chain. Polymer (A2) solution. Next, 100 parts by mass of an ultraviolet-curable oligomer obtained by reacting neopentaerythritol triacrylate and diisocyanate with respect to 100 parts by mass of the above-mentioned propylene polymer A2 was added as an ultraviolet-curable compound, and 2.5 parts were added respectively. Trade name "IRGACURE 651" (manufactured by Ciba Specialty Chemicals) and 0.5 parts by weight A cyanate ester compound (trade name: "CORONATE L" manufactured by Nippon Polyurethane Industry Co., Ltd.) was used as a photopolymerization initiator to obtain a UV-curable propylene-based adhesive solution B2. The resin composition was coated on a PET film having a thickness of 38 μm so that the dry film thickness was 10 μm, and dried at 110 ° C. for 3 minutes to form an adhesive layer, and then the adhesive layer was adhered to 100 μm ethylene. -A vinyl acetate copolymer film is transferred thereon to produce a dicing tape C2.

The gel fraction of the UV-curable adhesive layer of the dicing tape produced in the above manner was 74%.

(Cut of cutting tape C3)

Using butyl acrylate and hydroxyethyl 2-acrylate as monomer components, the above monomer component was copolymerized in ethyl acetate at a mass ratio of 8: 2 to obtain propylene containing hydroxyl groups bonded to the main chain. Polymer (A2) solution.

Next, 2-methacrylic acid oxyethyl isocyanate was added to the solution containing the acrylic copolymer (A2), and dibutyltin dilaurate as a catalyst was reacted at 50 ° C for 24 hours to obtain a propylene-containing polymer ( A3) solution, the propylene polymer (A3) has a carbon-carbon double bond at the end of a branch.

Then, with respect to 100 parts by mass of the above solution A3 containing a propylene polymer having a carbon-carbon double bond at the end of a branched chain, 2.5 parts by mass of a product name "IRGACURE 651" (manufactured by Ciba Specialty Chemicals) and As a photopolymerization initiator, 0.5 parts by mass of a polyisocyanate-based compound (trade name “CORONATE L” manufactured by Nippon Polyurethane Industry Co., Ltd.) was obtained to obtain a UV-curable propylene-based adhesive solution B3. The resin composition was coated on a PET film having a thickness of 38 μm so that the dry film thickness was 10 μm, and dried at 110 ° C. for 3 minutes to form an adhesive layer, and then the adhesive layer was adhered to a 100 μm layer. The ethylene-vinyl acetate copolymer film was transferred by this to produce a dicing tape C3.

The gel fraction of the ultraviolet-curable adhesive layer of the dicing tape produced in the above manner was 68%.

(C4 production)

With respect to 100 parts by mass of the acrylic polymer A3, 25 parts by mass of an ultraviolet curable oligomer obtained by reacting neopentaerythritol triacrylate and diisocyanate is added as an ultraviolet curable compound. In the same manner as the tape C3, a dicing tape C4 was produced.

The gel fraction of the ultraviolet-curable adhesive layer of the dicing tape produced in the above manner was 55%.

(C5 production)

With respect to 100 parts by mass of the propylene polymer A3, 100 parts by mass of an ultraviolet curable oligomer obtained by reacting neopentaerythritol triacrylate and diisocyanate is added as an ultraviolet curable compound. The dicing tape C3 is produced similarly to the dicing tape C5.

The gel fraction of the ultraviolet-curable adhesive layer of the dicing tape produced in the above manner was 20%.

Here, the gel fraction of each dicing tape was evaluated by the following method.

"Gel fraction"

The isolation film was removed from the dicing tape for semiconductor processing having a size of 50 mm × 50 mm, and the mass A of the dicing tape for semiconductor processing was measured. Next, in the state of being immersed in 100 g of methyl isobutyl ketone (MIBK), the sample of the weighed semiconductor processing dicing tape was left for 48 hours, and then dried at a constant temperature layer of 50 ° C, and the sample was weighed out. Quality B. Furthermore, the adhesive layer of the sample was wiped off with 100 g of ethyl acetate, and then the mass C of the sample was measured. The gel fraction was calculated by the following formula (1).

Gel fraction (%) = (B-C) / (A-C) (1)

(Example 1)

For each dicing tape (C1 ~ C5), the PET film is peeled from the dicing tape, the ultraviolet curing adhesive layer of the dicing tape is bonded to the semiconductor wafer and the ring frame, and then the semiconductor wafer is irradiated with ultraviolet rays in a nitrogen environment. Thereby, the adhesive layer in the region where the semiconductor wafer is not adhered is hardened in advance, and an evaluation sample is produced.

(Example 2)

For each dicing tape (C1 ~ C5), peel the PET film from the dicing tape, adhere the UV-curable adhesive layer of the dicing tape to the semiconductor wafer and the ring frame, and then prevent the wafer from being irradiated with ultraviolet rays in a nitrogen environment. In the method of the adhesion region, ultraviolet rays are radiated from the dicing tape side through a mask, thereby hardening the adhesive layer in the region where the semiconductor wafer is not adhered in advance, thereby preparing an evaluation sample.

(Example 3)

For each dicing tape (C1 ~ C5), before peeling the PET film from the dicing tape, the region where the semiconductor wafer is adhered and the area where the ring frame is adhered in the ultraviolet-curable adhesive layer of the dicing tape are not irradiated with ultraviolet rays. By irradiating ultraviolet rays through a mask, a semiconductor processing dicing tape (C1C ~ C5C) in which an adhesive layer in a region where a semiconductor wafer is not adhered is hardened in advance is produced. A semiconductor wafer and a ring frame are adhered to an adhesive layer in a region of the dicing tape for semiconductor processing that is not hardened by ultraviolet radiation, thereby producing an evaluation sample.

(Comparative example 1)

For each cutting tape (C1 ~ C5), peel off the PET film from the cutting tape, and harden the UV of the cutting tape The modified adhesive layer is adhered to the semiconductor wafer and the ring frame, thereby preparing an evaluation sample.

(Comparative example 2)

For each dicing tape (C1 ~ C5), peel the PET film from the dicing tape, adhere the UV-curable adhesive layer of the dicing tape to the semiconductor wafer and the ring frame, and then irradiate ultraviolet rays from the dicing tape side in a nitrogen environment. Then, an evaluation sample was produced.

(Comparative example 3)

For each of the dicing tapes (C1 to C5), before the PET film is peeled from the dicing tape, the entire surface of the UV-curable adhesive layer of the dicing tape is irradiated with ultraviolet rays, thereby producing a UV-curable adhesive layer that has been cured in advance. Dicing tape for semiconductor processing (C1E ~ C5E).

Attempts have been made to peel off the PET film from these semiconductor processing dicing tapes and adhere the UV-curable adhesive layer of the semiconductor processing dicing tape to the semiconductor wafer and the ring frame, but the adhesive force of the adhesive layer disappears due to the UV curing And therefore cannot be glued.

Test example

For each of the samples of Examples 1 to 3 and Comparative Examples 1 to 3, the evaluation tests of the solvent resistance and the peelability of the support member were performed as follows.

The obtained results are shown in Tables 1 to 3 below.

"Solvent resistance"

Methyl isobutyl ketone (MIBK) was sprayed as an organic solvent from the semiconductor wafer side of the adjusted evaluation samples in Examples and Comparative Examples, and the semiconductor wafer was rotated at a speed of 20 rpm to perform spin cleaning. After the washing and drying are completed, observe the adhesive layer in the semiconductor processing dicing tape in the region where the semiconductor wafer is not adhered. Use the dicing tape for semiconductor processing where the adhesive does not dissolve or swell. Half of the agent dissolves or swells The cutting tape for conductor processing was regarded as C, and it was judged that it was disqualified.

"Supporting member peelability"

By using the method disclosed in the specification of US Patent Application Publication No. 2011/0272092, a structure is obtained in which a plasma polymer separation layer is sequentially laminated on a 6-inch silicon wafer having a thickness of about 700 μm, A silicone rubber adhesive layer and a glass plate having a thickness of 2.5 mm as a supporting member.

Instead of the semiconductor wafers in the examples and comparative examples, the dicing tape was adhered to the wafer back surface of the structure obtained in the above manner (the surface without the plasma polymer separation layer, etc.), and fixed to the ring frame It was transferred to De-Bonder DB12T manufactured by Suss, and the peelability of the supporting member was evaluated.

A support member having a peeling between the plasma polymer separation layer and the wafer surface in the supporting member is regarded as A, and it is judged to be a pass. When the peeling occurred, the supporting member that peeled between the back surface of the wafer and the dicing tape was regarded as C, and it was judged as failed. Also, those incapable of attaching the dicing tape to the back surface of the wafer of the structure 1 (the surface on which the plasma polymer separation layer and the like are not laminated) are also regarded as C and judged to be unacceptable.

According to the above Tables 1 to 3, for Examples 1 to 3, regardless of the gel fraction before ultraviolet curing of the ultraviolet curing adhesive layer of the dicing tape, the solvent resistance and supporting members of all dicing tapes The peelability was all satisfactory, and the results were good. On the other hand, in Comparative Example 1, when the gel fraction before ultraviolet curing of the ultraviolet-curable adhesive layer of the dicing tape was low, the solvent resistance was unsatisfactory. As a result, the evaluation result depends on the dicing tape. Composition and lack of versatility. In Comparative Example 2 and Comparative Example 3, although the solvent resistance was satisfactory due to ultraviolet curing, the support member could not be peeled off, or the dicing tape could not be attached by itself, which was not suitable as a semiconductor manufacturing step.

Although the present invention and its embodiments are described, as long as the invention is not specifically specified, even in any detail of the description of the invention, it is not used to limit the invention, and as long as it does not violate the invention shown in the scope of the patent application in this case The spirit and scope should be explained to the greatest extent.

This application claims priority based on Japanese Patent Application No. 2012-111971 filed in Japan on May 15, 2012. The present invention refers to this application and incorporates its content as part of the description of this specification.

Claims (7)

A dicing method for a semiconductor wafer includes the following steps: (a) bonding a supporting member to a circuit surface side of the semiconductor wafer through an adhesive; (b) thinning a back surface on the opposite side of the circuit surface of the semiconductor wafer Processing; (c) adhering a dicing tape having at least an ultraviolet-curable adhesive layer on the back surface on the opposite side of the circuit surface of the semiconductor wafer; (d) peeling the semiconductor wafer from the adhesive layer and the supporting member; (e) cleaning the residue of the adhesive on the semiconductor wafer with an organic solvent; and (f) cutting the semiconductor wafer to form a wafer; characterized in that, before the step (e), the dicing tape The adhesive layer in the region where the semiconductor wafer is not adhered has been hardened due to ultraviolet irradiation. For example, the slicing method for a semiconductor wafer according to item 1 of the patent scope, wherein the hardening by irradiating ultraviolet rays is after the step (c), (h1) radiates ultraviolet rays from the semiconductor wafer side, and (h2) radiates The dicing tape side is irradiated with ultraviolet rays through a mask, or (h3) before step (c), ultraviolet rays are irradiated to the adhesive layer portion of the region where the semiconductor wafer is not adhered through the mask. A dicing tape for semiconductor processing is used for a dicing method of a semiconductor wafer including the following steps: (a) a supporting member is bonded to a circuit surface side of the semiconductor wafer via an adhesive; (b) Thin processing on the back side of the circuit side; (c) bonding a dicing tape having at least an ultraviolet-curable adhesive layer to the back surface on the opposite side of the circuit surface of the semiconductor wafer; (d) peeling the semiconductor wafer from the adhesive layer and the supporting member; (e) ) Cleaning the residue of the adhesive on the semiconductor wafer with an organic solvent; and (f) cutting the semiconductor wafer to form a wafer; before the step (e), the dicing tape is not adhered with the The adhesive layer in the area of the semiconductor wafer has been hardened by ultraviolet radiation. For example, the dicing tape for semiconductor processing of the third patent application range, wherein the resin component of the radiation-curable resin composition of the adhesive is a (meth) acrylic copolymer, which is branched or main chain of the polymer through an amine An urethane bond is bonded to a group containing a (meth) acrylic fluorenyloxy group. A dicing tape for semiconductor processing, which is used for a dicing method of a semiconductor wafer under the scope of patent application No. 1; and the hardening by irradiating ultraviolet rays is performed in step (c), and (h1) is formed from a semiconductor crystal. Ultraviolet rays are irradiated on the round side, (h2) ultraviolet rays are irradiated from the dicing tape side through a mask, or (h3) before the step (c), the adhesive layer portion through the mask is applied to the region where the semiconductor wafer is not adhered. Exposure to ultraviolet rays. A dicing tape for semiconductor processing, which is used for a dicing method of a semiconductor wafer with a patent scope of item 1 or 2, wherein the gel fraction of the dicing tape before the adhesive hardens is more than 20%. A dicing tape for semiconductor processing, which is used for a dicing method of a semiconductor wafer in which the scope of patent application is 1 or 2, wherein the resin of the adhesive is a radiation-curable resin composition The component is a (meth) acrylic copolymer, and a group containing a (meth) acryloxy group is bonded to a polymer branch or main chain via an urethane bond.