TWI587558B - Substrate handling device, substrate processing system, substrate processing system, control device and manufacturing method of display element - Google Patents

Substrate handling device, substrate processing system, substrate processing system, control device and manufacturing method of display element Download PDF

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TWI587558B
TWI587558B TW099132551A TW99132551A TWI587558B TW I587558 B TWI587558 B TW I587558B TW 099132551 A TW099132551 A TW 099132551A TW 99132551 A TW99132551 A TW 99132551A TW I587558 B TWI587558 B TW I587558B
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substrate
opening
sheet
processing
sheet substrate
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TW099132551A
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TW201131855A (en
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木內徹
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尼康股份有限公司
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Priority claimed from JP2009219953A external-priority patent/JP5556105B2/en
Priority claimed from US12/876,842 external-priority patent/US8801307B2/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J15/00Devices or arrangements of selective printing mechanisms, e.g. ink-jet printers or thermal printers, specially adapted for supporting or handling copy material in continuous form, e.g. webs
    • B41J15/04Supporting, feeding, or guiding devices; Mountings for web rolls or spindles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Description

基板匣、基板處理裝置、基板處理系統、控制裝置及顯示元件之製造方法Substrate crucible, substrate processing apparatus, substrate processing system, control device, and manufacturing method of display element

本發明係關於基板匣、基板處理裝置、基板處理系統、控制裝置及顯示元件之製造方法。The present invention relates to a substrate stack, a substrate processing apparatus, a substrate processing system, a control device, and a method of manufacturing a display element.

作為構成顯示器裝置等顯示裝置之顯示元件,已知有例如有機電致發光(有機EL)元件。有機EL元件,係於基板上具有陽極及陰極且具有夾於此等陽極與陰極間之有機發光層之構成。有機EL元件,係從陽極往有機發光層注入電洞而在有機發光層使電洞與電子結合,藉由該結合時之發出之光而得到顯示光。有機EL元件,係於基板上形成有例如連接於陽極及陰極之電路等。As a display element constituting a display device such as a display device, for example, an organic electroluminescence (organic EL) element is known. The organic EL device is composed of an anode and a cathode on a substrate and has an organic light-emitting layer interposed between the anode and the cathode. In the organic EL device, a hole is injected from the anode to the organic light-emitting layer, and a hole is bonded to the electron in the organic light-emitting layer, and the light emitted by the combination is used to obtain display light. In the organic EL element, for example, an electric circuit connected to an anode and a cathode is formed on a substrate.

作為製作有機EL元件之方法之一,已知有例如被稱為捲軸對捲軸方式(roll to roll)(以下僅標記為「捲軸方式」)之方法(參照例如專利文獻1)。捲軸方式,係送出捲繞於基板供給側之滾筒之一片片狀基板且一邊以基板回收側之滾筒捲取被送出之基板一邊搬送基板,在基板被送出後至被捲取之期間,將構成有機EL元件之發光層或陽極、陰極、電路等依序形成於基板上之方法。As one of methods for producing an organic EL element, for example, a method called a roll to roll (hereinafter, simply referred to as "reel method") is known (see, for example, Patent Document 1). In the reel method, a sheet-like substrate which is wound on the substrate supply side is fed, and the substrate is conveyed while the substrate on the substrate collection side is taken up, and the substrate is conveyed, and the substrate is conveyed and wound up. A method in which a light-emitting layer of an organic EL element, an anode, a cathode, a circuit, or the like is sequentially formed on a substrate.

專利文獻1記載之構成,例如係基板送出用滾筒及基板捲取用滾筒能自生產線卸除之構成。已卸除之滾筒例如被搬送至另一生產線,而能安裝於該另一生產線來使用。In the configuration described in Patent Document 1, for example, the substrate feeding roller and the substrate winding roller can be removed from the production line. The removed drum is, for example, transported to another production line and can be installed on the other production line for use.

[先行技術文獻][Advanced technical literature]

[專利文獻1]國際公開第2006/100868號小冊子[Patent Document 1] International Publication No. 2006/100868

然而,上述構成中,係在捲繞於卷軸之基板露出之狀態下置於生產線之外部環境下,故有塵埃等異物附著於基板之虞。However, in the above configuration, the substrate wound around the reel is exposed to the external environment of the production line, so that foreign matter such as dust adheres to the substrate.

本發明之態樣係以提供可防止於基板有異物附著之基板匣、基板處理裝置、基板處理系統為目的。The aspect of the present invention is to provide a substrate, a substrate processing apparatus, and a substrate processing system which are capable of preventing foreign matter from adhering to a substrate.

本發明之一態樣之基板匣,其具備:具有搬出搬入基板之開口部且收容通過前述開口部之前述基板之匣本體;設於前述匣本體且對外部連接部可裝卸地被連接之座部;對應於前述座部與前述外部連接部之間之連接狀態閉塞前述開口部之閉塞部。A substrate raft according to an aspect of the present invention includes: a cymbal body having an opening that carries in and out the substrate and accommodates the substrate passing through the opening; and a shackle body that is detachably connected to the external connection portion a blocking portion that closes the opening portion in accordance with a connection state between the seat portion and the external connection portion.

本發明之一態樣之基板匣,其具備:具有搬出搬入基板之開口部且收容通過前述開口部之前述基板之匣本體;設於前述匣本體且對外部連接部可裝卸地被連接之座部;前述開口部係設為可對應於前述座部與前述外部連接部之間之連接狀態以前述基板閉塞。A substrate raft according to an aspect of the present invention includes: a cymbal body having an opening that carries in and out the substrate and accommodates the substrate passing through the opening; and a shackle body that is detachably connected to the external connection portion The opening portion is configured to be closable by the substrate in accordance with a connection state between the seat portion and the external connection portion.

本發明之一態樣之基板處理裝置,其具備:處理基板之基板處理部;上述基板匣;設於前述基板處理部且連接於前述基板匣之基板處理側連接部。A substrate processing apparatus according to an aspect of the present invention includes: a substrate processing unit that processes a substrate; the substrate 匣; and a substrate processing unit connection portion that is provided in the substrate processing unit and that is connected to the substrate 。.

本發明之一態樣之基板處理系統,其具備:對基板進行第1處理之第1處理裝置;對前述第1處理後之前述基板進行第2處理之第2處理裝置;從前述第1處理裝置回收前述基板並將回收之前述基板往前述第2處理裝置供給之基板中繼裝置;使用上述基板匣做為前述基板中繼裝置。A substrate processing system according to an aspect of the present invention includes: a first processing device that performs a first processing on a substrate; a second processing device that performs a second processing on the substrate after the first processing; and the first processing from the first processing The substrate relay device that recovers the substrate and supplies the recovered substrate to the second processing device, and uses the substrate 匣 as the substrate relay device.

本發明之一態樣之控制裝置,具備:處理基板之基板處理裝置、控制連接於前述基板處理裝置之上述基板匣之主控制部。A control device according to an aspect of the present invention includes: a substrate processing apparatus that processes a substrate; and a main control unit that controls the substrate 连接 connected to the substrate processing apparatus.

本發明之一態樣之顯示元件之製造方法,具有:於基板處理部處理基板之步驟;使用上述基板匣對前述基板處理部供給前述基板之步驟。A method of manufacturing a display device according to an aspect of the present invention includes: a step of processing a substrate in a substrate processing unit; and a step of supplying the substrate to the substrate processing unit using the substrate 。.

利用本發明之態樣,可防止於基板有異物附著。According to the aspect of the invention, it is possible to prevent foreign matter from adhering to the substrate.

以下,參照圖式說明本發明之第1實施形態。Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.

(有機EL元件)(Organic EL device)

圖1(a)係顯示有機EL元件構成之俯視圖。圖1(b)係圖6(a)之b-b剖面圖。圖1(c)係圖1(a)之c-c剖面圖。Fig. 1(a) is a plan view showing the structure of an organic EL element. Figure 1 (b) is a cross-sectional view taken along line b-b of Figure 6 (a). Figure 1 (c) is a cross-sectional view taken along line c-c of Figure 1 (a).

如圖1(a)~圖1(c)所示,有機EL元件50係於薄片基板FB形成閘極電極G及閘極絕緣層I、進而形成源極電極S、汲極電極D及像素電極P後形成有有機半導體層OS之底接觸型。As shown in FIGS. 1(a) to 1(c), the organic EL element 50 is formed on the thin substrate FB to form the gate electrode G and the gate insulating layer I, and further to form the source electrode S, the drain electrode D, and the pixel electrode. After P, a bottom contact type of the organic semiconductor layer OS is formed.

如圖1(b)所示,於閘極電極G上形成有閘極絕緣層I。於閘極絕緣層I上形成源極匯流排線SBL之源極電極S,且形成有與像素電極P連接之汲極電極D。於源極電極S與汲極電極D之間形成有有機半導體層OS。如此即完成場效型電晶體。又,於像素電極P上,如圖1(b)及圖1(c)所示形成發光層IR,於該發光層IR形成透明電極ITO。As shown in FIG. 1(b), a gate insulating layer I is formed on the gate electrode G. A source electrode S of the source bus bar SBL is formed on the gate insulating layer I, and a drain electrode D connected to the pixel electrode P is formed. An organic semiconductor layer OS is formed between the source electrode S and the drain electrode D. This completes the field effect transistor. Further, on the pixel electrode P, a light-emitting layer IR is formed as shown in FIGS. 1(b) and 1(c), and a transparent electrode ITO is formed on the light-emitting layer IR.

如圖1(b)及圖1(c)所示,例如,於薄片基板FB形成有分隔壁BA(堤層(BANK LAYER))。又,如圖1(c)所示,源極匯流排線SBL形成於分隔壁BA間。如上述,藉由存在分隔壁BA,以高精度地形成源極匯流排線SBL,且像素電極P及發光層IR亦正確地形成。此外,雖在圖1(b)及圖1(c)未顯示,但閘極匯流排線GBL亦與源極匯流排線SBL同樣地形成於分隔壁BA間。As shown in FIG. 1(b) and FIG. 1(c), for example, a partition wall BA (a bank layer (BANK LAYER)) is formed on the sheet substrate FB. Further, as shown in FIG. 1(c), the source bus bar SBL is formed between the partition walls BA. As described above, the source bus bar SBL is formed with high precision by the partition wall BA, and the pixel electrode P and the light-emitting layer IR are also formed correctly. Further, although not shown in FIGS. 1(b) and 1(c), the gate bus bar GBL is formed between the partition walls BA in the same manner as the source bus bar SBL.

此有機EL元件50非常合適用於以例如顯示器裝置等顯示裝置為首之電子機器之顯示部等。此情形下,係使用例如將有機EL元件50形成為面板狀者。此種有機EL元件50之製造,需形成形成有薄膜電晶體(TFT)、像素電極之基板。為了於該基板上之像素電極上精度良好地形成包含發光層之一層以上之有機化合物層(發光元件層),需於像素電極之邊界區域容易且精度良好地形成分隔壁BA(堤層)。This organic EL element 50 is very suitably used for a display portion of an electronic device such as a display device such as a display device. In this case, for example, the organic EL element 50 is formed into a panel shape. In the manufacture of such an organic EL element 50, it is necessary to form a substrate on which a thin film transistor (TFT) and a pixel electrode are formed. In order to accurately form an organic compound layer (light-emitting element layer) including one or more layers of the light-emitting layer on the pixel electrode on the substrate, it is necessary to form the partition wall BA (bank layer) easily and accurately in the boundary region of the pixel electrode.

(基板處理裝置)(substrate processing device)

圖2係顯示使用具有可撓性之薄片基板FB進行處理之基板處理裝置100構成之概略圖。FIG. 2 is a schematic view showing the configuration of a substrate processing apparatus 100 that performs processing using a flexible sheet substrate FB.

基板處理裝置100係使用帶狀之薄片基板FB形成圖1所示之有機EL元件50之裝置。如圖2所示,基板處理裝置100具有基板供給部101、基板處理部102、基板回收部103及控制部104。薄片基板FB係從基板供給部101經由基板處理部102往基板回收部103被搬送。控制部104統籌控制基板處理裝置100之動作。The substrate processing apparatus 100 is a device in which the organic EL element 50 shown in FIG. 1 is formed using a strip-shaped sheet substrate FB. As shown in FIG. 2, the substrate processing apparatus 100 includes a substrate supply unit 101, a substrate processing unit 102, a substrate collection unit 103, and a control unit 104. The sheet substrate FB is transported from the substrate supply unit 101 to the substrate collection unit 103 via the substrate processing unit 102. The control unit 104 collectively controls the operation of the substrate processing apparatus 100.

以下說明中,設定XYZ正交座標系統,參照此XYZ正交座標系統說明各構件之位置關係。以水平面內之中薄片基板FB之搬送方向為X軸方向、於水平面內與X軸方向正交之方向為Y軸方向、與X軸方向及Y軸方向各自正交之方向(亦即鉛直方向)為Z軸方向。又,以繞X軸、Y軸、以及Z軸之旋轉(傾斜)方向分別為θX、θY、以及θZ方向。In the following description, the XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The direction in which the sheet substrate FB is conveyed in the horizontal plane is the X-axis direction, the direction orthogonal to the X-axis direction in the horizontal plane is the Y-axis direction, and the direction orthogonal to the X-axis direction and the Y-axis direction (that is, the vertical direction) ) is the Z-axis direction. Further, the directions of rotation (inclination) around the X-axis, the Y-axis, and the Z-axis are θX, θY, and θZ directions, respectively.

作為薄片基板FB,可使用例如耐熱性之樹脂膜、不鏽鋼等。例如,樹脂膜可使用聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯-乙烯醇共聚物樹脂、聚氯乙烯樹脂、纖維素樹脂、聚醯胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、乙酸乙烯樹脂等材料。薄片基板FB之Y方向之尺寸形成為例如1m~2m左右,X方向之尺寸形成為例如10m以上。當然,此尺寸不過為一例,並非限定於此。例如薄片基板FB之Y方向之尺寸亦可為50cm以下,亦可為2m以上。又,薄片基板FB之X方向之尺寸亦可為10m以下。又,本實施形態之可撓性,係指即使例如對基板施加至少自重程度之既定之力亦不會產生剪斷或破壞,能彎曲該基板之性質。上述可撓性會隨該基板之材質、大小、厚度、或溫度等環境等而變化。As the sheet substrate FB, for example, a heat resistant resin film, stainless steel or the like can be used. For example, the resin film may be a polyethylene resin, a polypropylene resin, a polyester resin, an ethylene-vinyl alcohol copolymer resin, a polyvinyl chloride resin, a cellulose resin, a polyamide resin, a polycarbonate resin, a polystyrene resin, or the like. Materials such as vinyl acetate resin. The dimension of the sheet substrate FB in the Y direction is, for example, about 1 m to 2 m, and the dimension in the X direction is, for example, 10 m or more. Of course, this size is merely an example and is not limited thereto. For example, the dimension of the sheet substrate FB in the Y direction may be 50 cm or less, or may be 2 m or more. Further, the dimension of the sheet substrate FB in the X direction may be 10 m or less. Further, the flexibility of the present embodiment means that the substrate can be bent without causing shear or breakage even if a predetermined force is applied to the substrate at least to its own weight. The flexibility described above varies depending on the material, size, thickness, temperature, and the like of the substrate.

薄片基板FB最好係熱膨脹係數較小,以使即使承受例如200℃左右之熱,尺寸亦不會改變。例如,可將無機填料混合於樹脂膜以縮小熱膨脹係數。作為無機填料之例,可舉出氧化鈦、氧化鋅、氧化鋁、氧化矽等。The sheet substrate FB preferably has a small coefficient of thermal expansion so that the size does not change even if it is subjected to heat of, for example, about 200 °C. For example, an inorganic filler may be mixed in the resin film to reduce the coefficient of thermal expansion. Examples of the inorganic filler include titanium oxide, zinc oxide, aluminum oxide, and cerium oxide.

基板供給部101連接於設於基板處理部102之供給側連接部102A。基板供給部101將例如捲成捲軸狀之薄片基板FB往基板處理部102供給。基板回收部103,回收在基板處理部102處理後之薄片基板FB。The substrate supply unit 101 is connected to the supply side connection unit 102A provided in the substrate processing unit 102. The substrate supply unit 101 supplies, for example, a sheet substrate FB wound in a roll shape to the substrate processing unit 102. The substrate collection unit 103 collects the sheet substrate FB processed by the substrate processing unit 102.

圖3係顯示基板處理部102之構成之圖。FIG. 3 is a view showing the configuration of the substrate processing unit 102.

如圖3所示,基板處理部102具有搬送單元105、元件形成部106、對準部107、基板切斷部108。基板處理部102,係一邊搬送從基板供給部101供給之薄片基板FB,一邊於該薄片基板FB形成上述之有機EL元件50之各構成要素,將形成有有機EL元件50之薄片基板FB往基板回收部103送出之部分。As shown in FIG. 3, the substrate processing unit 102 includes a transport unit 105, an element forming unit 106, an alignment unit 107, and a substrate cutting unit 108. In the substrate processing unit 102, the constituent elements of the above-described organic EL element 50 are formed on the sheet substrate FB while the sheet substrate FB supplied from the substrate supply unit 101 is transported, and the sheet substrate FB on which the organic EL element 50 is formed is transferred to the substrate. The portion sent by the recovery unit 103.

搬送單元105具有配置於沿X方向之位置之複數個滾筒RR。藉由滾筒RR旋轉亦可將薄片基板FB搬送於X軸方向。滾筒RR可係從兩面夾入薄片基板FB之橡膠滾筒,薄片基板FB只要係具有穿孔者亦可係具有棘輪之滾筒RR。複數滾筒RR中之一部分滾筒RR可移動於與搬送方向正交之Y軸方向。The transport unit 105 has a plurality of rollers RR disposed at positions in the X direction. The sheet substrate FB can also be transported in the X-axis direction by the rotation of the drum RR. The roller RR may be a rubber roller that is sandwiched between the sheet substrates FB from both sides, and the sheet substrate FB may be a roller RR having a ratchet as long as it has a perforator. One of the plurality of rollers RR of the plurality of rollers RR is movable in the Y-axis direction orthogonal to the conveying direction.

元件形成部106具有分隔壁形成部91、電極形成部92及發光層形成部93。分隔壁形成部91、電極形成部92及發光層形成部93,係從薄片基板FB之搬送方向上游側往下游側依此順序配置。以下,依序說明元件形成部106之各構成。The element forming portion 106 has a partition wall forming portion 91, an electrode forming portion 92, and a light emitting layer forming portion 93. The partition wall forming portion 91, the electrode forming portion 92, and the light-emitting layer forming portion 93 are arranged in this order from the upstream side to the downstream side in the transport direction of the sheet substrate FB. Hereinafter, each configuration of the element forming portion 106 will be described in order.

分隔壁形成部91具有壓印滾筒110及熱轉印滾筒115。分隔壁形成部91係對從基板供給部101送出之薄片基板FB形成分隔壁BA。在分隔壁形成部91以壓印滾筒110按壓薄片基板FB,且以熱轉印滾筒115將薄片基板FB加熱至玻璃轉移點以上以使按壓後之分隔壁BA保持形狀。因此,形成於壓印滾筒110之滾筒表面之模形狀轉印至薄片基板FB。薄片基板FB被熱轉印滾筒115加熱至例如200℃左右。The partition wall forming portion 91 has an impression cylinder 110 and a heat transfer roller 115. The partition wall forming portion 91 forms the partition wall BA on the sheet substrate FB sent from the substrate supply portion 101. The sheet substrate FB is pressed by the impression cylinder 110 at the partition wall forming portion 91, and the sheet substrate FB is heated to a temperature above the glass transition point by the heat transfer roller 115 to maintain the shape of the partition wall BA after pressing. Therefore, the mold shape formed on the surface of the drum of the impression cylinder 110 is transferred to the sheet substrate FB. The sheet substrate FB is heated by the heat transfer roller 115 to, for example, about 200 °C.

壓印滾筒110之滾筒表面作成鏡面,於其滾筒表面安裝有以SiC、Ta等材料構成之微細壓印用模111。微細壓印用模111係形成薄膜電晶體之配線用壓模及彩色濾光器用壓模。The surface of the cylinder of the impression cylinder 110 is mirror-finished, and a micro imprint mold 111 made of a material such as SiC or Ta is attached to the surface of the cylinder. The micro imprint mold 111 is a stamper for wiring of a thin film transistor and a stamper for a color filter.

壓印滾筒110係使用微細壓印用模111於薄片基板FB形成對準標記AM。由於於薄片基板FB之寬度方向即Y軸方向之兩側形成對準標記AM,因此微細壓印用模111具有對準標記AM用之壓模。The impression cylinder 110 forms an alignment mark AM on the sheet substrate FB using the fine imprint mold 111. Since the alignment mark AM is formed on both sides in the width direction of the sheet substrate FB, that is, in the Y-axis direction, the fine imprint mold 111 has a stamper for the alignment mark AM.

電極形成部92設於分隔壁形成部91之+X側,形成使用了例如有機半導體之薄膜電晶體。具體而言,在形成如以圖1所示之閘極電極G、閘極絕緣層I、源極電極S、汲極電極D及像素電極P後,形成有機半導體層OS。The electrode forming portion 92 is provided on the +X side of the partition wall forming portion 91, and forms a thin film transistor using, for example, an organic semiconductor. Specifically, after the gate electrode G, the gate insulating layer I, the source electrode S, the drain electrode D, and the pixel electrode P as shown in FIG. 1 are formed, the organic semiconductor layer OS is formed.

作為薄膜電晶體(TFT),可係無機半導體系者或使用了有機半導體者。無機半導體之薄膜電晶體已知有非晶矽系者,但亦可係使用了有機半導體之薄膜電晶體。只要使用此有機半導體構成薄膜電晶體,即能活用印刷技術或液滴塗布法技術形成薄膜電晶體。又,使用了有機半導體之薄膜電晶體中,如以圖1所示之場效型電晶體(FET)特別理想。As the thin film transistor (TFT), it may be an inorganic semiconductor or an organic semiconductor. A thin film transistor of an inorganic semiconductor is known as an amorphous germanium system, but a thin film transistor using an organic semiconductor may also be used. As long as the organic semiconductor is used to constitute the thin film transistor, the thin film transistor can be formed by a printing technique or a droplet coating method. Further, in a thin film transistor using an organic semiconductor, a field effect type transistor (FET) as shown in Fig. 1 is particularly preferable.

電極形成部92具有液滴塗布裝置120與熱處理裝置BK、切斷裝置130等。The electrode forming portion 92 has a droplet applying device 120, a heat treatment device BK, a cutting device 130, and the like.

本實施形態中,作為液滴塗布裝置120,係使用例如在形成閘極電極G時使用之液滴塗布裝置120G、在形成閘極絕緣層I時使用之液滴塗布裝置120I、在形成源極電極S、汲極電極D及像素電極P時使用之液滴塗布裝置120SD、在形成有機半導體層OS時使用之液滴塗布裝置120OS等。In the present embodiment, as the droplet applying device 120, for example, a droplet applying device 120G used when forming the gate electrode G, a droplet applying device 120I used when forming the gate insulating layer I, and a source are formed. The droplet applying device 120SD used for the electrode S, the drain electrode D, and the pixel electrode P, and the droplet applying device 120OS used for forming the organic semiconductor layer OS.

圖4係顯示液滴塗布裝置120之構成之俯視圖。圖4中,係顯示從+Z側觀看液滴塗布裝置120時之構成。液滴塗布裝置120於Y軸方向形成為較長。於液滴塗布裝置120設有未圖示之驅動裝置。液滴塗布裝置120可藉由該驅動裝置移動於例如X方向、Y方向及θZ方向。4 is a plan view showing the configuration of the droplet applying device 120. In Fig. 4, the configuration when the droplet applying device 120 is viewed from the +Z side is shown. The droplet applying device 120 is formed to be long in the Y-axis direction. A droplet driving device 120 is provided with a driving device (not shown). The droplet applying device 120 can be moved by, for example, the X direction, the Y direction, and the θZ direction by the driving device.

於液滴塗布裝置120形成有複數個嘴122。嘴122設於液滴塗布裝置120中與薄片基板FB之對向面。嘴122沿例如Y軸方向排列,例如形成有兩列該嘴122之列(嘴列)。控制部104可一次使液滴塗布於所有嘴122,亦可針對各嘴122個別調整塗布液滴之時點。A plurality of nozzles 122 are formed in the droplet coating device 120. The nozzle 122 is provided in the opposing surface of the droplet applying device 120 and the sheet substrate FB. The nozzles 122 are arranged, for example, in the Y-axis direction, for example, two rows of the nozzles 122 (mouth array) are formed. The control unit 104 can apply the droplets to all the nozzles 122 at a time, and can individually adjust the timing at which the droplets are applied to the respective nozzles 122.

作為液滴塗布裝置120,能採用例如噴墨方式或分配器方式等。作為噴墨方式,可舉出帶電控制方式、加壓振動方式、電機轉換式、電熱轉換方式、靜電吸引方式等。液滴塗布法,使用材料之浪費較少且能將所欲量之材料確實地配置於所欲之位置。此外,藉由液滴塗布法塗布之金屬墨之一滴之量係例如1~300毫微克。As the droplet applying device 120, for example, an inkjet method, a dispenser method, or the like can be employed. Examples of the inkjet method include a charging control method, a pressurized vibration method, a motor conversion method, an electrothermal conversion method, and an electrostatic attraction method. In the droplet coating method, the waste of materials is less and the desired amount of material can be reliably disposed at a desired position. Further, the amount of one drop of the metallic ink coated by the droplet coating method is, for example, 1 to 300 ng.

回到圖2,液滴塗布裝置120G係於閘極匯流排線GBL之分隔壁BA內塗布金屬墨。液滴塗布裝置120I係於切換部塗布聚醯亞胺系樹脂或聚氨酯系樹脂之電氣絕緣性墨。液滴塗布裝置120SD係於源極匯流排線SBL之分隔壁BA內及像素電極P之分隔壁BA內塗布金屬墨。液滴塗布裝置120OS係於源極電極S與汲極電極D之間之切換部塗布有機半導體墨。Returning to Fig. 2, the droplet applying device 120G coats the metallic ink in the partition wall BA of the gate bus bar GBL. The droplet applying device 120I is an electrically insulating ink that coats a polyimine-based resin or a urethane-based resin in a switching portion. The droplet applying device 120SD coats the metal ink in the partition wall BA of the source bus bar SBL and the partition wall BA of the pixel electrode P. The droplet applying device 120OS applies an organic semiconductor ink to a switching portion between the source electrode S and the drain electrode D.

金屬墨係粒子徑為約5nm左右之導電體在室溫之溶劑中會穩定地分散之液體,作為導電體,可使用碳、銀(Ag)或金(Au)等。形成有機半導體墨之化合物,可係單結晶材料或非晶形材料,且可係低分子或高分子。作為形成有機半導體墨之化合物中特別理想者,可舉出稠五苯、聯伸三苯、蔥等所代表之縮環芳香族碳化氫化合物之單結晶或π共軛系高分子等。A metal ink having a particle diameter of about 5 nm or so can be stably dispersed in a solvent at room temperature, and carbon, silver (Ag) or gold (Au) can be used as the conductor. The compound forming the organic semiconductor ink may be a single crystal material or an amorphous material, and may be a low molecular weight or a high molecular weight. In particular, a single crystal or a π-conjugated polymer of a condensed cyclic aromatic hydrocarbon compound represented by condensed pentabenzene, a co-triphenyl, an onion or the like is exemplified as a compound which forms an organic semiconductor ink.

熱處理裝置BK分別配置於各液滴塗布裝置120之+X側(基板搬送方向下游側)。熱處理裝置BK可對薄片基板FB放射例如熱風或遠紅外線等。熱處理裝置BK係使用此等之放射熱,將塗布於薄片基板FB之液滴乾燥或燒成(烘烤)而使硬化。The heat treatment apparatus BK is disposed on the +X side of each droplet application device 120 (on the downstream side in the substrate transfer direction). The heat treatment apparatus BK can emit, for example, hot air or far infrared rays to the sheet substrate FB. The heat treatment apparatus BK uses the radiant heat of these, and the droplets applied to the sheet substrate FB are dried or baked (baked) to be hardened.

切斷裝置130設於液滴塗布裝置120SD之+X側且為液滴塗布裝置120OS之上游側。切斷裝置130係使用例如雷射光等切斷藉由液滴塗布裝置120SD形成之源極電極S與汲極電極D。切斷裝置130具有未圖示之光源與使來自該光源之雷射光照射於薄片基板FB上之電流鏡131。The cutting device 130 is provided on the +X side of the droplet applying device 120SD and on the upstream side of the droplet applying device 120OS. The cutting device 130 cuts off the source electrode S and the drain electrode D formed by the droplet applying device 120SD using, for example, laser light. The cutting device 130 includes a light source (not shown) and a current mirror 131 that irradiates the laser light from the light source onto the sheet substrate FB.

作為雷射光之種類,最好係對切斷之金屬膜會吸收之波長之雷射,波長轉換雷射中,YAG等之2,3,4倍諧波較佳。又,藉由使用脈衝型雷射能防止熱擴散,減低切斷部以外之損傷。材料為鋁時,最好係760nm波長之飛秒雷射。As the type of the laser light, it is preferable to use a laser having a wavelength that the cut metal film absorbs, and in the wavelength conversion laser, a 2, 3, and 4 harmonic of YAG or the like is preferable. Further, by using a pulse type laser, heat diffusion can be prevented, and damage other than the cut portion can be reduced. When the material is aluminum, it is preferably a femtosecond laser having a wavelength of 760 nm.

本實施形態中,係使用例如使用了鈦藍寶石雷射作為光源之飛秒雷射照射部。該飛秒雷射照射部,係以例如10KHz~40KHz之脈衝照射雷射光LL。In the present embodiment, for example, a femtosecond laser irradiation unit using a titanium sapphire laser as a light source is used. The femtosecond laser irradiation unit irradiates the laser light LL with a pulse of, for example, 10 kHz to 40 kHz.

本實施形態中,由於使用飛秒雷射,因此能進行次微秒級之加工,能正確地切斷決定場效型電晶體之性能之源極電極S與汲極電極D之間隔。源極電極S與汲極電極D之間隔係例如3μm左右~30μm左右。In the present embodiment, since the femtosecond laser is used, the sub-microsecond processing can be performed, and the distance between the source electrode S and the drain electrode D which determines the performance of the field effect transistor can be accurately cut. The distance between the source electrode S and the drain electrode D is, for example, about 3 μm to 30 μm.

除了上述之飛秒雷射以外,亦能使用例如碳酸氣體雷射或綠光雷射等。又,除了雷射以外,亦能為以切割鋸等以機械方式切斷之構成。In addition to the above-described femtosecond laser, for example, a carbon dioxide gas laser or a green laser can be used. Further, in addition to the laser, it can be mechanically cut by a dicing saw or the like.

電流鏡131配置於雷射光LL之光路。電流鏡131係使來自光源之雷射光LL反射至薄片基板FB上。電流鏡131設成可旋轉於例如θX方向、θY方向及θZ方向。藉由電流鏡131旋轉,雷射光LL之照射位置會變化。The current mirror 131 is disposed on the optical path of the laser light LL. The current mirror 131 reflects the laser light LL from the light source onto the sheet substrate FB. The current mirror 131 is set to be rotatable in, for example, the θX direction, the θY direction, and the θZ direction. By the rotation of the current mirror 131, the irradiation position of the laser light LL changes.

藉由使用上述之分隔壁形成部91及電極形成部92之兩方,即使不使用所謂微影製程,亦能活用印刷技術或液滴塗布法技術來形成薄膜電晶體等。在僅使用採用例如印刷技術或液滴塗布法技術等之電極形成部92時,有時會因墨之滲透或擴開而無法精度良好地形成薄膜電晶體等。By using both of the partition wall forming portion 91 and the electrode forming portion 92 described above, a thin film transistor or the like can be formed by a printing technique or a droplet coating method without using a so-called lithography process. When only the electrode forming portion 92 such as a printing technique or a droplet coating method is used, a thin film transistor or the like may not be formed accurately due to penetration or expansion of the ink.

相對於此,由於藉由使用分隔壁形成部91來形成分隔壁BA,因此可防止墨之滲透或擴開。又,決定薄膜電晶體之性能之源極電極S與汲極電極D之間隔,係藉由雷射加工或機械加工而形成。On the other hand, since the partition wall BA is formed by using the partition wall forming portion 91, penetration or expansion of the ink can be prevented. Further, the distance between the source electrode S and the drain electrode D which determines the performance of the thin film transistor is formed by laser processing or machining.

發光層形成部93配置於電極形成部92之+X側。發光層形成部93係於形成有電極之薄片基板FB上形成例如有機EL裝置之構成要素即發光層IR或像素電極ITO等。發光層形成部93具有液滴塗布裝置140及熱處理裝置BK。The light-emitting layer forming portion 93 is disposed on the +X side of the electrode forming portion 92. The light-emitting layer forming portion 93 is formed of, for example, a light-emitting layer IR or a pixel electrode ITO which is a constituent element of the organic EL device, on the sheet substrate FB on which the electrode is formed. The light emitting layer forming portion 93 has a droplet applying device 140 and a heat processing device BK.

以發光層形成部93形成之發光層IR,含有主化合物與磷光性化合物(亦稱為磷光發光性化合物)。所謂主化合物係於發光層含有之化合物。磷光性化合物係來自激發三重態之發光被觀測之化合物,在室溫下發出磷光。The light-emitting layer IR formed by the light-emitting layer forming portion 93 contains a main compound and a phosphorescent compound (also referred to as a phosphorescent compound). The main compound is a compound contained in the light-emitting layer. The phosphorescent compound is a compound from which the luminescence of the triplet state is observed, and phosphorescence is emitted at room temperature.

本實施形態中,作為液滴塗布裝置140係使用例如形成紅色發光層之液滴塗布裝置140Re、形成綠色發光層之液滴塗布裝置140Gr、形成藍色發光層之液滴塗布裝置140B1、形成絕緣層之液滴塗布裝置140I及形成像素電極ITO之液滴塗布裝置140IT等。In the present embodiment, as the droplet applying device 140, for example, a droplet applying device 140Re that forms a red light emitting layer, a droplet applying device 140Gr that forms a green light emitting layer, and a droplet applying device 140B1 that forms a blue light emitting layer are used to form insulation. The layer droplet applying device 140I and the droplet applying device 140IT forming the pixel electrode ITO and the like.

作為液滴塗布裝置140可與上述液滴塗布裝置120同樣地採用噴墨方式或分配器方式等。在設置例如電洞輸送層及電子輸送層等作為有機EL元件50之構成要素時,係另外設置形成此等層之裝置(例如液滴塗布裝置等)。As the droplet applying device 140, an inkjet method, a dispenser method, or the like can be employed similarly to the above-described droplet applying device 120. When a hole transporting layer, an electron transporting layer, or the like is provided as a constituent element of the organic EL element 50, a device for forming such a layer (for example, a droplet applying device or the like) is separately provided.

液滴塗布裝置140Re係將R溶液塗布於像素電極P上。液滴塗布裝置140Re係調整R溶液之吐出量以使乾燥後之膜厚成為100nm。作為R溶液,可使用例如將主材之聚乙烯咔唑(PVK)加上紅摻雜材溶解於1,2-二氯乙烷中之溶液。The droplet applying device 140Re applies the R solution to the pixel electrode P. The droplet applying device 140Re adjusts the discharge amount of the R solution so that the film thickness after drying becomes 100 nm. As the R solution, for example, a solution in which a main material of polyvinylcarbazole (PVK) plus a red doping material is dissolved in 1,2-dichloroethane can be used.

液滴塗布裝置140Gr係將G溶液塗布於像素電極P上。作為G溶液,可使用例如將主材PVK加上綠摻雜材溶解於1,2-二氯乙烷中之溶液。The droplet applying device 140Gr applies a G solution to the pixel electrode P. As the G solution, for example, a solution in which a main material PVK plus a green doping material is dissolved in 1,2-dichloroethane can be used.

液滴塗布裝置140B1係將B溶液塗布於像素電極P上。作為B溶液,可使用例如將主材PVK加上藍摻雜材溶解於1,2-二氯乙烷中之溶液。The droplet applying device 140B1 applies the B solution to the pixel electrode P. As the B solution, for example, a solution in which a main material PVK plus a blue dopant is dissolved in 1,2-dichloroethane can be used.

液滴塗布裝置140I係於閘極匯流排線GBL或源極匯流排線SBL之一部分塗布電氣絕緣性墨。作為電氣絕緣性墨,可使用例如聚醯亞胺系樹脂或聚氨酯系樹脂之墨。The droplet applying device 140I applies an electrically insulating ink to a portion of the gate bus bar GBL or the source bus bar SBL. As the electrically insulating ink, for example, an ink of a polyimide resin or a polyurethane resin can be used.

液滴塗布裝置140IT,係於紅色、綠色及藍色發光層上塗布ITO(Indium Tin Oxide:銦錫氧化物)墨。作為ITO墨,可使用於氧化銦(In2O3)添加有數%之氧化錫(SnO2)之化合物等。又,亦可使用IDIXO(In2O3-ZnO)等非晶質且能製作透明導電膜之材料。透明導電膜最好係透射率為90%以上。The droplet applying device 140IT is coated with an ITO (Indium Tin Oxide) ink on the red, green, and blue light-emitting layers. As the ITO ink, a compound or the like in which tin oxide (SnO 2 ) is added to indium oxide (In 2 O 3 ) can be used. Further, a material which is amorphous such as IDIXO (In 2 O 3 -ZnO) and which can produce a transparent conductive film can also be used. The transparent conductive film preferably has a transmittance of 90% or more.

熱處理裝置BK分別配置於各液滴塗布裝置140之+X側(基板搬送方向下游側)。熱處理裝置BK,與在電極形成部92使用之熱處理裝置BK同樣地,可對薄片基板FB放射例如熱風或遠紅外線等。熱處理裝置BK係使用此等之放射熱,將塗布於薄片基板FB之液滴乾燥或燒成(烘烤)而使硬化。The heat treatment apparatus BK is disposed on the +X side of each droplet application device 140 (on the downstream side in the substrate transfer direction). The heat treatment apparatus BK can emit, for example, hot air or far infrared rays to the sheet substrate FB in the same manner as the heat treatment apparatus BK used in the electrode forming unit 92. The heat treatment apparatus BK uses the radiant heat of these, and the droplets applied to the sheet substrate FB are dried or baked (baked) to be hardened.

對準部107具有沿X方向設置之複數個對準攝影機CA(CA1~CA8)。對準攝影機CA可在可視光照明下以CCD或CMOS攝影,並處理該攝影影像而檢測出對準標記AM之位置,或亦可將雷射光照射於對準標記AM,即使接收其散射光亦可檢測出對準標記AM之位置。The alignment portion 107 has a plurality of alignment cameras CA (CA1 to CA8) disposed in the X direction. The alignment camera CA can take CCD or CMOS photography under visible light illumination, and process the photographic image to detect the position of the alignment mark AM, or can also irradiate the laser light to the alignment mark AM even if it receives the scattered light. The position of the alignment mark AM can be detected.

對準攝影機CA1配置於熱轉印滾筒115之+X側。對準攝影機CA1係檢測出於薄片基板FB上藉由熱轉印滾筒115形成之對準標記AM之位置。對準攝影機CA2~CA8分別配置於熱處理裝置BK之+X側。對準攝影機CA2~CA8係檢測出經過熱處理裝置BK之薄片基板FB之對準標記AM之位置。The alignment camera CA1 is disposed on the +X side of the thermal transfer roller 115. The alignment camera CA1 detects the position of the alignment mark AM formed by the thermal transfer roller 115 on the sheet substrate FB. The alignment cameras CA2 to CA8 are disposed on the +X side of the heat treatment device BK, respectively. The alignment cameras CA2 to CA8 detect the position of the alignment mark AM of the sheet substrate FB passing through the heat treatment device BK.

有時會因經過熱轉印滾筒115及熱處理裝置BK而使薄片基板FB在X軸方向及Y軸方向伸縮。可藉由於如上述進行熱處理之熱轉印滾筒115之+X側或熱處理裝置BK之+X側配置對準攝影機CA,而能檢測出因熱變形等導致之薄片基板FB之位置偏移。The sheet substrate FB may be expanded and contracted in the X-axis direction and the Y-axis direction by the heat transfer roller 115 and the heat treatment device BK. The positional shift of the sheet substrate FB due to thermal deformation or the like can be detected by arranging the alignment camera CA on the +X side of the thermal transfer roller 115 or the +X side of the heat treatment device BK which is heat-treated as described above.

對準攝影機CA1~CA8之檢測結果被發送至控制部104。控制部104根據對準攝影機CA1~CA8之檢測結果,進行例如液滴塗布裝置120或液滴塗布裝置140之墨之塗布位置與時點之調整、來自基板供給部101之薄片基板FB之供給速度或滾筒RR之搬送速度之調整、滾筒RR之往Y方向移動之調整、切斷裝置130之切斷位置或時點等之調整。The detection results of the alignment cameras CA1 to CA8 are transmitted to the control unit 104. The control unit 104 performs, for example, adjustment of the application position and time of the ink of the droplet applying device 120 or the droplet applying device 140, and the supply speed of the sheet substrate FB from the substrate supply unit 101, based on the detection results of the alignment cameras CA1 to CA8. The adjustment of the conveyance speed of the drum RR, the adjustment of the movement of the drum RR in the Y direction, and the adjustment of the cutting position or time of the cutting device 130 are performed.

(基板匣)(substrate 匣)

本實施形態中,使用基板匣1做為基板供給部101及基板回收部103。以下說明中,為了說明方便,係設定與圖2共通之XYZ正交座標系統,並參照此XYZ正交座標系統說明各構件之位置關係。以下之XYZ正交座標系統係舉在基板供給部101連接於基板處理部102之狀態下將基板匣1做為基板供給部101使用之場合為例說明。In the present embodiment, the substrate 1 is used as the substrate supply unit 101 and the substrate collection unit 103. In the following description, for convenience of explanation, an XYZ orthogonal coordinate system common to FIG. 2 is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The following XYZ orthogonal coordinate system will be described as an example in which the substrate stack 1 is used as the substrate supply unit 101 in a state where the substrate supply unit 101 is connected to the substrate processing unit 102.

圖5係顯示基板匣1之構成之立體圖。又,圖6係顯示沿圖5之A-A’剖面之構成之圖。如圖5及圖6所示,基板匣1具有匣本體2、座部3及閉塞部4。Fig. 5 is a perspective view showing the configuration of the substrate 匣1. Further, Fig. 6 is a view showing a configuration of a cross section taken along line A-A' of Fig. 5. As shown in FIGS. 5 and 6, the substrate 1 has a crucible body 2, a seat portion 3, and a closing portion 4.

匣本體2係收容薄片基板FB之部分。匣本體2具有收容部20、搬送部(搬送機構)21、基板導引部22、第2基板搬送部36及第2基板導引部37。又,上述座部3設於匣本體2。又,例如匣本體2係鋁製或杜拉鋁製等。The body 2 is a portion that houses the sheet substrate FB. The crucible body 2 has a housing portion 20, a conveying portion (transporting mechanism) 21, a substrate guiding portion 22, a second substrate conveying portion 36, and a second substrate guiding portion 37. Further, the seat portion 3 is provided on the cymbal body 2. Further, for example, the crucible body 2 is made of aluminum or Duralumin.

收容部20係收容薄片基板FB之部分。收容部20,以能收容捲取成例如捲軸狀之薄片基板FB之方式形成為圓筒狀,設置成一部分往+X側突出(突出部23)。本實施形態中,以延伸於圖中Y方向之狀態配置。收容部20具有蓋部25及基板驅動機構24。The accommodating portion 20 is a portion that houses the sheet substrate FB. The accommodating portion 20 is formed in a cylindrical shape so as to be able to be housed in a roll-shaped sheet substrate FB, and is partially protruded toward the +X side (projecting portion 23). In the present embodiment, it is arranged in a state extending in the Y direction in the drawing. The accommodating portion 20 has a lid portion 25 and a substrate driving mechanism 24 .

蓋部25設於收容部20之+Y側端部或-Y側端部。蓋部25設置成能對收容部20拆裝。藉由使蓋部25對收容部20拆裝,而能對收容部20內部直接處理。作為蓋部25之開關機構,例如亦可係於蓋部25及收容部20設有彼此卡合之螺紋之構成,亦可為藉由鉸鏈機構連接蓋部25與收容部20之構成。蓋部25具有窗部28及顯示部29。The lid portion 25 is provided at the +Y side end portion or the -Y side end portion of the accommodating portion 20. The lid portion 25 is provided to be detachable from the accommodating portion 20. By detaching the lid portion 25 from the accommodating portion 20, the inside of the accommodating portion 20 can be directly processed. The switch mechanism of the lid portion 25 may be configured such that the lid portion 25 and the accommodating portion 20 are provided with threads that engage with each other, and the lid portion 25 and the accommodating portion 20 may be connected by a hinge mechanism. The lid portion 25 has a window portion 28 and a display portion 29.

窗部28係以例如可見光能透過之材料,例如玻璃或塑膠等形成。透過窗部28,可觀察收容部20之內部。顯示部29係使薄片基板FB之狀態等資訊顯示之部分。於顯示部29顯示例如收容於收容部20之薄片基板FB之長度尺寸或薄片基板FB之剩餘長度等。The window portion 28 is formed of, for example, a material that is transparent to visible light, such as glass or plastic. The inside of the accommodating portion 20 can be observed through the window portion 28. The display unit 29 is a portion that displays information such as the state of the sheet substrate FB. For example, the length of the sheet substrate FB accommodated in the accommodating portion 20 or the remaining length of the sheet substrate FB is displayed on the display unit 29.

基板驅動機構24係進行捲取薄片基板FB之動作及送出薄片基板FB之動作之部分。基板驅動機構24設於收容部20之內部。基板驅動機構24具有滾筒部(軸部)26及導引部27。滾筒部26如圖6所示,具有旋轉軸構件26a、擴徑部26b及接著部26c。The substrate drive mechanism 24 is a part that performs an operation of winding up the sheet substrate FB and an operation of feeding out the sheet substrate FB. The substrate driving mechanism 24 is provided inside the housing portion 20. The substrate drive mechanism 24 has a drum portion (shaft portion) 26 and a guide portion 27. As shown in FIG. 6, the roller unit 26 has a rotating shaft member 26a, an enlarged diameter portion 26b, and a rear portion 26c.

旋轉軸構件26a係由例如鋁等剛性高之金屬形成之圓柱狀構件。旋轉軸構件26a例如被設於蓋部25中央部之開口部25a及軸承構件25b支承成能旋轉。此情形下,旋轉軸構件26a之中心軸成為平行於例如Y方向之狀態,旋轉軸構件26a旋轉於θY方向。The rotating shaft member 26a is a cylindrical member formed of a metal having a high rigidity such as aluminum. The rotating shaft member 26a is rotatably supported by, for example, the opening 25a provided in the center of the lid portion 25 and the bearing member 25b. In this case, the central axis of the rotating shaft member 26a is parallel to, for example, the Y direction, and the rotating shaft member 26a is rotated in the θY direction.

旋轉軸構件26a連接於未圖示之旋轉驅動機構。藉由旋轉驅動機構之驅動控制,旋轉軸構件26a以中心軸為中心旋轉。旋轉驅動機構如圖6所示,能使旋轉軸構件26a往例如+θY方向及-θY方向之任一方向旋轉。The rotating shaft member 26a is connected to a rotation driving mechanism (not shown). The rotary shaft member 26a is rotated about the central axis by the drive control of the rotary drive mechanism. As shown in FIG. 6, the rotation drive mechanism can rotate the rotation shaft member 26a in any of the +θY direction and the -θY direction, for example.

擴徑部26b係於旋轉軸構件26a之表面以均一厚度形成。擴徑部26b形成為與旋轉軸構件26a一體旋轉。接著部26c在剖面視下於擴徑部26b之表面以均一厚度形成。接著部26c係使用具有使薄片基板FB接著之程度之黏著性之材料形成。The enlarged diameter portion 26b is formed on the surface of the rotating shaft member 26a with a uniform thickness. The enlarged diameter portion 26b is formed to rotate integrally with the rotating shaft member 26a. The succeeding portion 26c is formed in a uniform thickness on the surface of the enlarged diameter portion 26b in a cross-sectional view. The succeeding portion 26c is formed using a material having a degree of adhesion to the sheet substrate FB.

導引部27具有旋動構件(第1導引構件)27a及前端構件(第1導引構件)27b。旋動構件27a例如一端透過軸部27c而安裝於收容部20,設成能以該軸部27c為中心旋動於θY方向。旋動構件27a連接於未圖示之旋轉驅動機構。The guide portion 27 has a rotation member (first guide member) 27a and a distal end member (first guide member) 27b. For example, one end of the turning member 27a is attached to the accommodating portion 20 through the shaft portion 27c, and is rotatable about the θY direction around the shaft portion 27c. The turning member 27a is connected to a rotation driving mechanism (not shown).

前端構件27b在剖面視下連接於旋動構件27a之另一端。例如,前端構件27b形成為具有在剖面視下為圓弧狀之曲面。薄片基板FB,係透過設於前端構件27b之該剖面視圓弧狀之+Z側曲面被往滾筒部26導引。前端構件27b與旋動構件27a一體旋動。當例如旋動構件27a往從滾筒部26遠離之方向(滾筒部26之徑方向之外側方向)旋動時,係沿收容部20之內周抵接。因此,可避免前端構件27b與被滾筒部26捲取之薄片基板FB之間之接觸。The front end member 27b is connected to the other end of the rotary member 27a in a cross-sectional view. For example, the front end member 27b is formed to have a curved surface that is arcuate in cross section. The sheet substrate FB is guided to the drum portion 26 through the +Z side curved surface which is formed in the arc shape of the end member 27b. The front end member 27b is integrally rotated with the rotation member 27a. For example, when the rotary member 27a is rotated in a direction away from the roller portion 26 (outside the radial direction of the roller portion 26), it is abutted along the inner circumference of the housing portion 20. Therefore, the contact between the front end member 27b and the sheet substrate FB taken up by the roller portion 26 can be avoided.

座部3係連接於基板處理部102之部分。座部3例如設於設在收容部20之突出部23之+X側端部。座部3具有用以與基板處理部102連接之插入部3a。在基板匣1作為基板供給部101使用時,座部3係連接於基板處理部102之供給側連接部102A。在基板匣1作為基板回收部103使用時,座部3係連接於基板處理部102之回收側連接部102B。座部3不論連接於基板處理部102之基板供給部101及基板回收部103之任一者,均連接成可拆裝。The seat portion 3 is connected to a portion of the substrate processing portion 102. The seat portion 3 is provided, for example, at the +X side end portion of the protruding portion 23 provided in the housing portion 20. The seat portion 3 has an insertion portion 3a for connection to the substrate processing portion 102. When the substrate cassette 1 is used as the substrate supply unit 101, the seat portion 3 is connected to the supply side connection portion 102A of the substrate processing unit 102. When the substrate cassette 1 is used as the substrate collection portion 103, the seat portion 3 is connected to the collection-side connection portion 102B of the substrate processing portion 102. The seat portion 3 is connected to be detachably attached to any of the substrate supply unit 101 and the substrate collection unit 103 that are connected to the substrate processing unit 102.

於座部3設有開口部34及第2開口部35。開口部34係設於+Z側之開口部,係在與匣本體2之間薄片基板FB進出之部分。於匣本體2收容經由該開口部34之薄片基板FB。收容於匣本體2之薄片基板FB係經由該開口部34送出至匣本體2外部。The seat portion 3 is provided with an opening portion 34 and a second opening portion 35. The opening portion 34 is provided in the opening portion on the +Z side, and is a portion where the sheet substrate FB enters and exits with the crucible body 2. The substrate body 2 houses the sheet substrate FB that passes through the opening portion 34. The sheet substrate FB accommodated in the crucible body 2 is sent out to the outside of the crucible body 2 through the opening portion 34.

第2開口部35係設於-Z側之開口部,係在與匣本體2之間與薄片基板FB不同之帶狀第2基板SB進出之部分。作為此種第2基板SB,可舉出例如保護薄片基板FB之元件形成面之保護基板等。作為保護基板可使用例如襯紙等。第2開口部35例如與開口部34相隔間隔配置。第2開口部35例如形成為與開口部34相同之尺寸及形狀。又,作為本實施形態之第2基板SB,亦可使用不鏽鋼之薄板(例如厚度為0.1mm以下等)等具有導電性之材質。此情形下,第2基板SB與薄片基板FB一起收容於匣本體2時,若使第2基板SB電氣連接於匣本體2,即能防止片基板FB之帶電。The second opening portion 35 is provided in the opening portion on the -Z side, and is a portion in which the strip-shaped second substrate SB which is different from the sheet substrate FB is moved in and out from the crucible body 2 . The second substrate SB is, for example, a protective substrate that protects the element forming surface of the sheet substrate FB. As the protective substrate, for example, a liner or the like can be used. The second opening portion 35 is disposed, for example, at an interval from the opening portion 34. The second opening portion 35 is formed, for example, in the same size and shape as the opening portion 34. Further, as the second substrate SB of the present embodiment, a conductive material such as a stainless steel thin plate (for example, a thickness of 0.1 mm or less) may be used. In this case, when the second substrate SB is housed in the crucible body 2 together with the sheet substrate FB, if the second substrate SB is electrically connected to the crucible body 2, the charging of the sheet substrate FB can be prevented.

搬送部21、基板導引部22、第2基板搬送部36及第2基板導引部37,例如設於突出部23之內部。圖7係將圖6中之突出部23周邊之構成擴大顯示之剖面圖。於圖7中,為了容易判別圖示,省略一部分之構成而顯示。The conveyance unit 21, the substrate guide unit 22, the second substrate conveyance unit 36, and the second substrate guide unit 37 are provided, for example, inside the protrusions 23. Fig. 7 is a cross-sectional view showing an enlarged configuration of the periphery of the protruding portion 23 in Fig. 6. In FIG. 7, in order to make it easy to discriminate the illustration, a part of the structure is omitted and displayed.

基板導引部22設於開口部34與搬送部21之間。基板導引部22係在開口部34與搬送部21之間導引薄片基板FB之部分。基板導引部22具有基板用導引構件22a及22b。基板用導引構件22a及22b係於Z方向相隔間隙22c對向配置,設成對向面分別大致平行於XY平面。該間隙22c連接於開口部34,薄片基板FB係在開口部34及間隙22c移動。The substrate guiding portion 22 is provided between the opening portion 34 and the conveying portion 21 . The substrate guiding portion 22 is a portion that guides the sheet substrate FB between the opening portion 34 and the conveying portion 21. The substrate guiding portion 22 has substrate guiding members 22a and 22b. The substrate guiding members 22a and 22b are disposed to face each other in the Z-direction gap 21c, and the opposing surfaces are substantially parallel to the XY plane. The gap 22c is connected to the opening 34, and the sheet substrate FB moves in the opening 34 and the gap 22c.

第2基板導引部37係在座部3與搬送部21之間導引第2基板SB之部分。第2基板導引部37具有第2基板用導引構件37a、37b及37c。第2基板用導引構件37a及37b係於Z方向相隔間隙37d對向配置,設成對向面分別大致平行於XY平面。第2基板用導引構件37c傾斜配置成將第2基板SB往+Z側導引。具體而言,係以第2基板用導引構件37c之-X側端部相對+X側端部往+Z側傾斜之狀態配置。The second substrate guiding portion 37 is a portion that guides the second substrate SB between the seat portion 3 and the conveying portion 21 . The second substrate guiding portion 37 has second substrate guiding members 37a, 37b, and 37c. The second substrate guiding members 37a and 37b are disposed to face each other in the Z-direction gap 37d, and the opposing surfaces are substantially parallel to the XY plane. The second substrate guiding member 37c is obliquely arranged to guide the second substrate SB toward the +Z side. Specifically, the end portion on the -X side of the second substrate guide member 37c is disposed to be inclined toward the +Z side with respect to the +X side end portion.

第2基板搬送部36,在座部3與搬送部21之間搬送第2基板SB。第2基板搬送部36配置於第2基板用導引構件37a及37b與第2基板用導引構件37c之間。第2基板搬送部36具有主動滾筒36a及從動滾筒36b。主動滾筒36a設成可旋轉於例如θY方向,連接於未圖示之旋轉驅動機構。從動滾筒36b於與主動滾筒36a之間相隔間隙配置成在與主動滾筒36a之間夾持第2基板SB。The second substrate transport unit 36 transports the second substrate SB between the seat portion 3 and the transport unit 21 . The second substrate conveying portion 36 is disposed between the second substrate guiding members 37a and 37b and the second substrate guiding member 37c. The second substrate transfer unit 36 has a drive roller 36a and a driven roller 36b. The driving roller 36a is provided to be rotatable in, for example, the θY direction, and is connected to a rotation driving mechanism (not shown). The driven roller 36b is disposed to be spaced apart from the driving roller 36a so as to sandwich the second substrate SB between the driven roller 36a and the driving roller 36a.

搬送部21係在座部3與收容部20之間搬送薄片基板FB及第2基板SB。搬送部21具有張力滾筒(張力機構)21a及測定滾筒(測定部)21b。張力滾筒21a係在與滾筒部26之間對薄片基板FB及第2基板SB賦予張力之滾筒。張力滾筒21a設成能旋轉於θY方向。於張力滾筒21a例如連接有未圖示之旋轉驅動機構。此外,張力滾筒21a及測定滾筒21b亦可設成能分別移動於圖7之Z方向。The conveyance unit 21 conveys the sheet substrate FB and the second substrate SB between the seat portion 3 and the accommodating portion 20 . The conveyance unit 21 has a tension roller (tension mechanism) 21a and a measurement drum (measurement unit) 21b. The tension roller 21a is a roller that applies tension to the sheet substrate FB and the second substrate SB between the roller unit 26. The tension roller 21a is provided to be rotatable in the θY direction. For example, a rotation drive mechanism (not shown) is connected to the tension roller 21a. Further, the tension roller 21a and the measuring roller 21b may be provided to be movable in the Z direction of Fig. 7, respectively.

測定滾筒21b係具有較張力滾筒21a小之徑之滾筒。測定滾筒21b,於與張力滾筒21a之間相隔既定間隙配置成能在與張力滾筒21a之間夾持薄片基板FB及第2基板SB。亦可為可調整測定滾筒21b與張力滾筒21a之間之間隙大小,以僅夾持薄片基板FB或一併夾持薄片基板FB及第2基板SB之構成。測定滾筒21b係隨著張力滾筒21a之旋轉而旋轉之從動滾筒。The measuring drum 21b is a drum having a smaller diameter than the tension roller 21a. The measurement drum 21b is disposed so as to be able to sandwich the sheet substrate FB and the second substrate SB between the tension roller 21a and the tension roller 21a. It is also possible to adjust the size of the gap between the measuring drum 21b and the tension roller 21a so as to sandwich only the sheet substrate FB or sandwich the sheet substrate FB and the second substrate SB. The measurement drum 21b is a driven roller that rotates in accordance with the rotation of the tension roller 21a.

藉由在在張力滾筒21a與測定滾筒21b之間夾持有薄片基板FB之狀態下使張力滾筒21a旋轉,能一邊對薄片基板FB賦予張力,一邊分別將薄片基板FB往該薄片基板FB之捲取方向及送出方向搬送。By rotating the tension roller 21a while the sheet substrate FB is being sandwiched between the tension roller 21a and the measurement roller 21b, the sheet substrate FB can be wound onto the sheet substrate FB while applying tension to the sheet substrate FB. Take the direction and the direction of delivery.

搬送部21具有檢測出例如測定滾筒21b之轉速或旋轉角度之檢測部21c。作為該檢測部21c能使用例如編碼器等。藉由該檢測部21c,而例如能測量透過測定滾筒21b之薄片基板FB之搬送距離等。The conveyance unit 21 has a detection unit 21c that detects, for example, the rotation speed or the rotation angle of the measurement drum 21b. As the detecting unit 21c, for example, an encoder or the like can be used. By the detecting unit 21c, for example, the transport distance of the sheet substrate FB passing through the measuring drum 21b can be measured.

於匣本體2設有資訊處理部IC(參照圖5)。資訊處理部IC係由例如IC晶片等構成,埋於例如匣本體2。於資訊處理部IC設有儲存基板處理裝置100及基板匣1之處理資訊之儲存部MR或例如在與控制部104之間收發處理資訊之通信部CR等。The UI unit 2 is provided with an information processing unit IC (see FIG. 5). The information processing unit IC is composed of, for example, an IC chip, and is buried in, for example, the body 2 . The information processing unit IC is provided with a storage unit MR that stores processing information of the substrate processing apparatus 100 and the substrate 1 or a communication unit CR that transmits and receives processing information to and from the control unit 104, for example.

作為此等處理資訊,可舉出例如基板處理裝置100之節拍時間、產率等資訊或基板匣1之搬送速度、滾筒部26之捲取速度、送出速度等資訊、關於薄片基板FB之資訊等。關於「節拍時間」係指每單位處理區域(例如上述液滴塗布裝置120或液滴塗布裝置140等1次可處理之區域,或有機EL元件50之面板1片之畫面區域、面板全面區域)之處理時間。關於「產率」係指每單位時間可處理之薄片基板FB之份量(例如長度、面板片數、基板匣1之個數等)。For example, information such as the tact time and yield of the substrate processing apparatus 100, the conveyance speed of the substrate 1 , the winding speed of the roller unit 26, the feed speed, and the like, information about the sheet substrate FB, and the like are exemplified. . The "takt time" refers to a processing area per unit (for example, a disposable processing area such as the above-described droplet applying device 120 or the droplet applying device 140, or a screen area of one panel of the organic EL element 50, and a panel full area). Processing time. The "yield" means the amount of the sheet substrate FB that can be processed per unit time (for example, the length, the number of panels, the number of the substrates 匣1, and the like).

在例如透過開口部34插入薄片基板FB,透過第2開口部35插入第2基板SB之情形,薄片基板FB及第2基板SB,藉由分別以基板導引部22及基板導引部37導引,而在匯合部39匯合。在匯合部39匯合之薄片基板FB及第2基板SB,在匯合之狀態下被搬送部21搬送。此時,搬送部21係按壓薄片基板FB與第2基板SB並使緊貼。因此,搬送部21係兼作將第2基板SB往薄片基板FB按壓之按壓機構。For example, when the sheet substrate FB is inserted through the opening portion 34 and the second substrate SB is inserted through the second opening portion 35, the sheet substrate FB and the second substrate SB are guided by the substrate guiding portion 22 and the substrate guiding portion 37, respectively. The lead is merged at the junction 39. The sheet substrate FB and the second substrate SB which are merged at the junction portion 39 are conveyed by the conveying portion 21 in a state of being merged. At this time, the conveyance unit 21 presses the sheet substrate FB and the second substrate SB to be in close contact with each other. Therefore, the conveying unit 21 also serves as a pressing mechanism that presses the second substrate SB toward the sheet substrate FB.

參照圖5及圖6,閉塞部4係設於突出部23之+X側端部。閉塞部4係對應於座部3與基板處理部102之間之連接狀態閉塞開口部34及第2開口部35之部分。閉塞部4具有蓋構件41及切換機構42。Referring to FIGS. 5 and 6, the closing portion 4 is provided on the +X side end portion of the protruding portion 23. The blocking portion 4 closes the portion of the opening portion 34 and the second opening portion 35 in accordance with the connection state between the seat portion 3 and the substrate processing portion 102. The closing portion 4 has a cover member 41 and a switching mechanism 42.

圖8及圖9係擴大顯示突出部23之+X側端部之構成之圖,係顯示閉塞部4之構成之圖。8 and FIG. 9 are views showing a configuration in which the +X side end portion of the protruding portion 23 is enlarged, and a configuration of the closing portion 4 is shown.

如圖8及圖9所示,蓋構件41係形成為覆蓋座部3之端面3b之尺寸。蓋構件41係透過固定構件43及軸部44安裝於座部3。As shown in FIGS. 8 and 9, the cover member 41 is formed to cover the size of the end surface 3b of the seat portion 3. The cover member 41 is attached to the seat portion 3 through the fixing member 43 and the shaft portion 44.

固定構件43係抵接固定於突出部23之+X側端部。軸部44係支承為可對固定構件43旋轉。蓋構件41係與軸部44一體地被設置。因此,蓋構件41可以軸部44為中心旋轉。蓋構件41係如圖8所示覆蓋座部3之端面3b之狀態為閉狀態,如圖9所示不覆蓋座部3之端面3b之狀態為開狀態。蓋構件41係設為可藉由以軸部44為中心旋轉來開閉設於端面3b之開口部34及第2開口部35。The fixing member 43 is abutted and fixed to the +X side end portion of the protruding portion 23. The shaft portion 44 is supported to be rotatable to the fixing member 43. The cover member 41 is integrally provided with the shaft portion 44. Therefore, the cover member 41 can be rotated about the shaft portion 44. The lid member 41 is in a closed state in a state in which the end surface 3b of the seat portion 3 is covered as shown in Fig. 8, and the state in which the end surface 3b of the seat portion 3 is not covered as shown in Fig. 9 is in an open state. The lid member 41 is an opening portion 34 and a second opening portion 35 that are openable and closable on the end surface 3b by being rotated about the shaft portion 44.

切換機構42係切換蓋構件41之開閉之部分。切換機構42具有帶構件45、彈性構件46及移動構件47。The switching mechanism 42 switches the opening and closing portion of the cover member 41. The switching mechanism 42 has a belt member 45, an elastic member 46, and a moving member 47.

帶構件45係使用具有可撓性之材料形成。帶構件45係一端固定於蓋構件41,另一端固定於移動構件47。彈性構件46係以藉由彈性力將蓋構件41與突出部23之間拉近之方式連接該蓋構件41與突出部23。因此,在不施加外力之場合,蓋構件41係因彈性構件46之彈性力而為閉狀態。The belt member 45 is formed using a material having flexibility. The belt member 45 has one end fixed to the cover member 41 and the other end fixed to the moving member 47. The elastic member 46 connects the cover member 41 and the protruding portion 23 in such a manner as to bring the cover member 41 and the protruding portion 23 closer together by an elastic force. Therefore, when no external force is applied, the cover member 41 is in a closed state due to the elastic force of the elastic member 46.

移動構件47係配置於例如固定構件43之-Z側。移動構件47具有頭部47a及帶固定部47b。The moving member 47 is disposed, for example, on the -Z side of the fixing member 43. The moving member 47 has a head portion 47a and a belt fixing portion 47b.

另一方面,於固定構件43之-Z側形成有槽部48。槽部48係沿例如X方向形成。於突出部23之-Z側從與固定構件43之抵接部分往-X方向形成有槽部23a。於槽部23a之底部沿該槽部23a形成有槽部23b。槽部23b係形成於上述槽部48之延長線上,連接於槽部48。On the other hand, a groove portion 48 is formed on the -Z side of the fixing member 43. The groove portion 48 is formed along, for example, the X direction. A groove portion 23a is formed on the -Z side of the protruding portion 23 from the abutting portion with the fixing member 43 in the -X direction. A groove portion 23b is formed along the groove portion 23a at the bottom of the groove portion 23a. The groove portion 23b is formed on an extension line of the groove portion 48 and is connected to the groove portion 48.

帶固定部47b係插入固定構件43之槽部48。因此,在帶固定部47b插入槽部48之狀態下移動構件47可於沿該槽部48之方向(X方向)移動。槽部48之+X端部係形成為於蓋構件41為閉狀態時抵接於帶固定部47b。The belt fixing portion 47b is inserted into the groove portion 48 of the fixing member 43. Therefore, the moving member 47 can be moved in the direction (X direction) along the groove portion 48 in a state where the belt fixing portion 47b is inserted into the groove portion 48. The +X end portion of the groove portion 48 is formed to abut against the belt fixing portion 47b when the lid member 41 is in the closed state.

槽部23a係形成為Y方向之尺寸與頭部47a之Y方向之尺寸大致相等之尺寸,頭部47a可從固定構件43側進入槽部23a內。於槽部23a之底部沿該槽部23a形成有槽部23b。槽部23b係形成於上述槽部48之延長線上,連接於槽部48。槽部23a之-X側端部係形成為蓋構件41在例如相對於閉狀態開啟90度程度之狀態時抵接於頭部47a。The groove portion 23a is formed such that the dimension in the Y direction is substantially equal to the dimension of the head portion 47a in the Y direction, and the head portion 47a can enter the groove portion 23a from the side of the fixing member 43. A groove portion 23b is formed along the groove portion 23a at the bottom of the groove portion 23a. The groove portion 23b is formed on an extension line of the groove portion 48 and is connected to the groove portion 48. The end portion on the -X side of the groove portion 23a is formed such that the lid member 41 abuts against the head portion 47a when, for example, the state of being opened by 90 degrees with respect to the closed state.

藉由以例如外力等使移動構件47相對於固定構件43往-X方向移動,帶固定部47b往-X方向移動,帶構件45被往-X側拉。連接於帶構件45之蓋構件41係如圖9所示被該帶構件45拉而開啟。藉由從於圖9顯示之狀態解除外力,彈性構件46之彈性力使蓋構件41往突出部23側拉近,如圖8所示蓋構件41返回閉狀態。藉由蓋構件41從開狀態成為閉狀態,蓋構件41使帶構件45往+X側拉,移動構件47亦返回原本之位置。By moving the moving member 47 in the -X direction with respect to the fixing member 43, by, for example, an external force or the like, the belt fixing portion 47b is moved in the -X direction, and the belt member 45 is pulled toward the -X side. The cover member 41 connected to the belt member 45 is pulled by the belt member 45 as shown in Fig. 9 to be opened. By releasing the external force from the state shown in Fig. 9, the elastic force of the elastic member 46 causes the cover member 41 to be pulled toward the protruding portion 23 side, and the cover member 41 is returned to the closed state as shown in Fig. 8 . When the lid member 41 is brought into a closed state from the open state, the lid member 41 pulls the belt member 45 toward the +X side, and the moving member 47 also returns to the original position.

(薄片基板往基板匣之收容動作)(Storage operation of the sheet substrate to the substrate)

其次,說明於如上述構成之基板匣1收容薄片基板FB之收容動作。圖10及圖11,係顯示收容動作時之基板匣1之狀態之圖。圖10及圖11中,為了容易判別圖,係以虛線顯示基板匣1之外形。Next, the housing operation of accommodating the sheet substrate FB in the substrate 1 configured as described above will be described. 10 and 11 are views showing the state of the substrate 匣 1 during the storage operation. In FIGS. 10 and 11, in order to easily discriminate the figure, the outer shape of the substrate 匣1 is shown by a broken line.

如圖10及圖11所示,於基板匣1收容薄片基板FB時,係將例如移動構件47往突出部23側拉近而使閉塞部4之蓋構件41為開啟狀態,使基板匣1保持於保持具HD上。在此狀態下,將薄片基板FB從開口部34插入。插入薄片基板FB時,係先設為使張力滾筒21a及旋轉軸構件26a(滾筒部26)旋轉之狀態。As shown in FIG. 10 and FIG. 11, when the substrate FB1 accommodates the sheet substrate FB, for example, the moving member 47 is pulled toward the protruding portion 23 side, and the lid member 41 of the closing portion 4 is opened to hold the substrate 匣1. On the holder HD. In this state, the sheet substrate FB is inserted from the opening portion 34. When the sheet substrate FB is inserted, the tension roller 21a and the rotating shaft member 26a (roller portion 26) are first rotated.

經由開口部34插入之薄片基板FB,被基板導引部22往搬送部21導引。搬送部21中,薄片基板FB係被夾於張力滾筒21a與測定滾筒21b之間而往收容部20側搬送。伴隨測定滾筒21b之旋轉,於例如檢測部21c檢測薄片基板FB之搬送長度。The sheet substrate FB inserted through the opening 34 is guided by the substrate guiding portion 22 to the conveying portion 21. In the transport unit 21, the sheet substrate FB is sandwiched between the tension roller 21a and the measurement drum 21b, and is transported to the accommodating portion 20 side. The detection unit 21c detects the transport length of the sheet substrate FB with the rotation of the measurement drum 21b.

往收容部20側通過搬送部21之薄片基板FB,一邊因自重而往-Z方向彎曲一邊被導引。本實施形態中,由於於薄片基板FB之-Z側設有導引部27,因此薄片基板FB係沿導引部27之旋動構件27a及前端構件27b被往滾筒部26導引。The sheet substrate FB of the transport unit 21 passes through the side of the accommodating portion 20, and is guided while being bent in the -Z direction by its own weight. In the present embodiment, since the guide portion 27 is provided on the -Z side of the sheet substrate FB, the sheet substrate FB is guided to the drum portion 26 along the swivel member 27a and the tip end member 27b of the guide portion 27.

在薄片基板FB之前端到達滾筒部26之接著部26c後,薄片基板FB之前端與接著部26c接著。在此狀態下若滾筒部26旋轉,薄片基板FB便徐徐地接著於接著部26c,薄片基板FB被接著部26c捲取。在薄片基板FB接著於接著部26c後,一邊調整例如張力滾筒21a之旋轉速度與旋轉軸構件26a之旋轉速度一邊搬送薄片基板FB,以使薄片基板FB在滾筒部26與搬送部21之間不會彎曲。After the front end of the sheet substrate FB reaches the succeeding portion 26c of the drum portion 26, the front end of the sheet substrate FB is followed by the succeeding portion 26c. When the roller portion 26 rotates in this state, the sheet substrate FB is gradually followed by the succeeding portion 26c, and the sheet substrate FB is taken up by the succeeding portion 26c. After the sheet substrate FB is followed by the succeeding portion 26c, the sheet substrate FB is conveyed while the rotation speed of the tension roller 21a and the rotation speed of the rotating shaft member 26a are adjusted, so that the sheet substrate FB is not between the drum portion 26 and the conveying portion 21. Will bend.

薄片基板FB在對滾筒部26被捲取例如一旋轉之量後,如圖11所示使導引部27退離。藉由在此狀態下使滾筒部26旋轉,薄片基板FB即徐徐地被滾筒部26陸續捲取。被捲取之薄片基板FB之厚度雖逐漸變厚,但由於導引部27已退離,因此薄片基板FB與導引部27不會接觸。After the sheet substrate FB is wound up by the pair of roller portions 26 by, for example, a rotation amount, the guide portion 27 is retracted as shown in FIG. By rotating the drum portion 26 in this state, the sheet substrate FB is gradually taken up by the drum portion 26. Although the thickness of the wound sheet substrate FB is gradually increased, since the guide portion 27 has been retracted, the sheet substrate FB does not come into contact with the guide portion 27.

在已捲取所欲長度之薄片基板FB後,切斷例如薄片基板FB中開口部34外側之部分,使閉塞部4之蓋構件41為關閉狀態。如此,於基板匣1收容薄片基板FB。在薄片基板FB之收容動作中,基於於檢測部21c測定之薄片基板FB之測定長度來算出例如已收容於基板匣1內之薄片基板FB之全長亦無妨。又,可使顯示部29顯示算出結果,亦可使儲存部MR儲存或使用通信部CR使通信。After the sheet substrate FB having the desired length has been taken up, for example, the portion outside the opening portion 34 of the sheet substrate FB is cut, and the lid member 41 of the closing portion 4 is closed. In this manner, the sheet substrate FB is housed in the substrate 匣1. In the storage operation of the sheet substrate FB, the entire length of the sheet substrate FB accommodated in the substrate 1 may be calculated based on the measurement length of the sheet substrate FB measured by the detecting unit 21c. Further, the display unit 29 can display the calculation result, and the storage unit MR can store or use the communication unit CR to perform communication.

此外,例如一邊由作業者從窗部28觀察收容部20之內部一邊進行薄片基板FB之捲取亦無妨。在此場合,可一邊確認薄片基板FB是否在折彎之狀態下被捲取、薄片基板FB之捲取形狀(捲軸形狀)是否為變形之狀態一邊使捲取作業進行,在有異常發生之場合可立刻使捲取停止。Further, for example, the operator may perform the winding of the sheet substrate FB while observing the inside of the accommodating portion 20 from the window portion 28. In this case, it is possible to perform the winding operation while checking whether or not the sheet substrate FB is wound in a state of being bent and the winding shape (reel shape) of the sheet substrate FB is deformed, and in the case where an abnormality occurs. The winding can be stopped immediately.

(基板處理裝置之動作)(Operation of substrate processing apparatus)

其次,說明如上述構成之基板處理裝置100之動作。Next, the operation of the substrate processing apparatus 100 configured as described above will be described.

本實施形態中,係依序進行以收容有薄片基板FB之基板匣1作為基板供給部101連接於供給側連接部102A之連接動作、由基板供給部101進行之基板匣1之薄片基板FB之供給動作、基板處理部102之元件形成動作、基板匣1之卸除動作。In the present embodiment, the substrate 匣 1 in which the sheet substrate FB is housed is connected as the connection operation of the substrate supply unit 101 to the supply-side connection unit 102A, and the substrate FB of the substrate 匣1 is performed by the substrate supply unit 101. The supply operation, the element forming operation of the substrate processing unit 102, and the removal operation of the substrate 匣1.

首先,說明基板匣1之連接動作。圖12係顯示基板匣1之連接動作之圖。First, the connection operation of the substrate 匣1 will be described. Fig. 12 is a view showing the connection operation of the substrate 匣1.

如圖12所示,關於供給側連接部102A,先將插入口形成為與座部3對應之形狀,再形成使卡合於移動構件47之卡合部51。As shown in FIG. 12, in the supply-side connecting portion 102A, the insertion opening is formed in a shape corresponding to the seat portion 3, and the engaging portion 51 that is engaged with the moving member 47 is formed.

連接動作中,在使基板匣1保持於保持具(與例如圖10所示之保持具HD相同之構成)之狀態下,進行座部3與供給側連接部102A之對齊。在對齊後,使座部3往+X側移動而插入基板處理部102。此時,卡合於卡合部51之移動構件47係相對座部3往-X方向移動。因此,座部3連接於基板處理部102時蓋構件41為開狀態。In the connecting operation, the substrate 3 is held in the holder (the same configuration as the holder HD shown in FIG. 10, for example), and the seat 3 and the supply-side connecting portion 102A are aligned. After the alignment, the seat portion 3 is moved to the +X side to be inserted into the substrate processing portion 102. At this time, the moving member 47 that is engaged with the engaging portion 51 moves in the -X direction with respect to the seat portion 3. Therefore, when the seat portion 3 is connected to the substrate processing portion 102, the lid member 41 is in an open state.

其次,說明供給動作。對基板處理部102供給薄片基板FB時,例如係使基板匣1之旋轉軸構件26a(滾筒部26)及張力滾筒21a往與收容動作時相反之方向旋轉,而如圖13所示,經由開口部34送出薄片基板FB。Next, the supply operation will be described. When the sheet substrate FB is supplied to the substrate processing unit 102, for example, the rotating shaft member 26a (roller portion 26) of the substrate 1 and the tension roller 21a are rotated in the opposite direction to the housing operation, and as shown in FIG. The portion 34 sends out the sheet substrate FB.

其次,說明元件形成動作。元件形成動作中,如圖2所示,一邊從基板供給部101對基板處理部102供給薄片基板FB,一邊在基板處理部102於該薄片基板FB上陸續形成元件。基板處理部102中,如圖3所示,藉由滾筒RR搬送薄片基板FB。Next, the component forming operation will be described. In the element forming operation, as shown in FIG. 2, while the substrate processing unit 101 supplies the sheet substrate FB from the substrate supply unit 101, the substrate processing unit 102 forms the element on the sheet substrate FB. In the substrate processing unit 102, as shown in FIG. 3, the sheet substrate FB is conveyed by the drum RR.

控制部104,可在例如與基板匣1之間進行處理資訊之通信,基於該處理資訊控制基板處理部2之動作。具體而言,可舉出配合來自基板匣1之薄片基板FB之供給速度調整基板處理部2內之各滾筒RR之旋轉速度。又,控制部104檢測出滾筒RR是否於Y軸方向偏移,當偏移時即使滾筒RR移動以修正位置。又,控制部104係與薄片基板FB之位置修正一併進行。The control unit 104 can perform communication of processing information with, for example, the substrate 1 and control the operation of the substrate processing unit 2 based on the processing information. Specifically, the rotation speed of each of the rollers RR in the substrate processing unit 2 is adjusted in accordance with the supply speed of the sheet substrate FB from the substrate 1 . Moreover, the control unit 104 detects whether or not the drum RR is displaced in the Y-axis direction, and when the shift is made, the drum RR is moved to correct the position. Moreover, the control unit 104 performs the position correction together with the sheet substrate FB.

從基板供給部101供給至基板處理部102之薄片基板FB,首先被搬送至分隔壁形成部91。分隔壁形成部91中,薄片基板FB係被以壓印滾筒110與熱轉印滾筒115夾持按壓,藉由熱轉印於薄片基板FB形成分隔壁BA及對準標記AM。The sheet substrate FB supplied from the substrate supply unit 101 to the substrate processing unit 102 is first conveyed to the partition wall forming portion 91. In the partition wall forming portion 91, the sheet substrate FB is sandwiched and pressed by the impression cylinder 110 and the thermal transfer roller 115, and the partition wall BA and the alignment mark AM are formed by thermal transfer on the sheet substrate FB.

圖14係顯示於薄片基板FB形成有分隔壁BA及對準標記AM之狀態之圖。圖15係放大圖14之一部分而顯示之圖。圖16係顯示沿圖15之D-D剖面之構成之圖。圖14及圖15係從+Z側觀看薄片基板FB時之樣子之圖。FIG. 14 is a view showing a state in which the partition wall BA and the alignment mark AM are formed on the sheet substrate FB. Fig. 15 is a view showing a part of Fig. 14 enlarged. Fig. 16 is a view showing the configuration of the cross section taken along the line D-D of Fig. 15. 14 and 15 are views showing a state in which the sheet substrate FB is viewed from the +Z side.

如圖14所示,分隔壁BA形成於薄片基板FB之Y方向中央部之元件形成區域60。如圖15所示,藉由形成分隔壁BA,而於元件形成區域60區劃出形成閘極匯流排線GBL及閘極電極G之區域(閘極形成區域52)與形成源極匯流排線SBL、源極電極S、汲極電極D及陽極P之區域(源極汲極形成區域53)。如圖16所示,閘極形成區域52在剖面視下形成為梯形。雖省略圖示,但源極汲極形成區域53亦為相同之形狀。分隔壁BA內之寬度W(μm)為閘極匯流排線GBL之線寬。此寬度W最好係相對於從液滴塗布裝置120G塗布之液滴直徑d(μm)設為兩倍~四倍左右。As shown in FIG. 14, the partition wall BA is formed in the element formation region 60 of the center portion of the sheet substrate FB in the Y direction. As shown in FIG. 15, by forming the partition wall BA, the region forming the gate bus line GBL and the gate electrode G (the gate forming region 52) and the source bus line SBL are formed in the element forming region 60. A region of the source electrode S, the drain electrode D, and the anode P (source drain formation region 53). As shown in FIG. 16, the gate forming region 52 is formed in a trapezoidal shape in cross section. Although not shown in the drawings, the source drain formation region 53 has the same shape. The width W (μm) in the partition wall BA is the line width of the gate bus bar GBL. The width W is preferably set to be about twice to four times as large as the droplet diameter d (μm) applied from the droplet applying device 120G.

此外,閘極形成區域52及源極汲極形成區域53之剖面形狀,最好係在剖面視下為V字形或U字形,以在微細壓印用模111按壓薄片基板FB後薄片基板FB容易剝離。除此以外之形狀,例如可係在剖面視下為矩形形狀。Further, the cross-sectional shape of the gate forming region 52 and the source drain forming region 53 is preferably V-shaped or U-shaped in cross section, so that the sheet substrate FB is easily pressed after the micro-imprinting mold 111 presses the sheet substrate FB. Stripped. Other shapes may be, for example, a rectangular shape in the cross section.

另一方面,如圖14所示,對準標記AM係於薄片基板FB之Y方向兩端部之緣區域61形成一對。分隔壁BA及對準標記AM由於相互位置關係重要因此係同時形成。如圖15所示,於Y軸方向規定有對準標記AM與閘極形成區域52間之既定距離PY,於X軸方向規定有對準標記AM與源極汲極形成區域53間之既定距離PX。因此,能根據一對對準標記AM之位置檢測出薄片基板FB之X軸方向之偏移、Y軸方向之偏移及θ旋轉。On the other hand, as shown in FIG. 14, the alignment mark AM is formed in a pair of edge regions 61 at both end portions of the sheet substrate FB in the Y direction. The partition wall BA and the alignment mark AM are formed at the same time due to their mutual positional relationship. As shown in FIG. 15, a predetermined distance PY between the alignment mark AM and the gate formation region 52 is defined in the Y-axis direction, and a predetermined distance between the alignment mark AM and the source drain formation region 53 is defined in the X-axis direction. PX. Therefore, the offset of the sheet substrate FB in the X-axis direction, the shift in the Y-axis direction, and the θ rotation can be detected based on the position of the pair of alignment marks AM.

圖14及圖15中,對準標記AM雖係依X軸方向之每複數行分隔壁BA設置一對,但並不限於此,例如亦可依分隔壁BA之每一行設置對準標記AM。又,只要有空間,亦可不僅於薄片基板FB之緣區域61而於元件形成區域60亦設置對準標記AM。又,圖14及圖15中,對準標記AM雖顯示十字形,但亦可係圓形標記、傾斜之直線標記等其他標記形狀。In FIGS. 14 and 15, the alignment mark AM is provided in a pair of the plurality of rows of partition walls BA in the X-axis direction. However, the alignment mark AM is not limited thereto. For example, the alignment mark AM may be provided for each row of the partition walls BA. Further, as long as there is a space, the alignment mark AM may be provided not only in the edge region 61 of the sheet substrate FB but also in the element formation region 60. Further, in FIGS. 14 and 15, the alignment mark AM has a cross shape, but may be other mark shapes such as a circular mark or a slanted straight line mark.

其次,薄片基板FB被搬送滾筒RR搬送至電極形成部92。電極形成部92中,藉由各液滴塗布裝置120進行液滴之塗布,於薄片基板FB上形成電極。Next, the sheet substrate FB is transported to the electrode forming portion 92 by the transport roller RR. In the electrode forming portion 92, droplets are applied by the respective droplet applying devices 120 to form electrodes on the sheet substrate FB.

於薄片基板FB上首先藉由液滴塗布裝置120G形成閘極匯流排線GBL及閘極電極G。圖17(a)及圖17(b),係顯示藉由液滴塗布裝置120G進行液滴塗布之薄片基板FB之樣子之圖。The gate bus line GBL and the gate electrode G are first formed on the sheet substrate FB by the droplet applying device 120G. 17(a) and 17(b) are views showing the state of the sheet substrate FB which is subjected to droplet application by the droplet applying device 120G.

如圖17(a)所示,液滴塗布裝置120G係於形成有分隔壁BA之薄片基板FB之閘極形成區域52以例如1~9之順序塗布金屬墨。此順序係例如以金屬墨彼此之張力塗布成直線狀之順序。圖17(b)係顯示例如塗布有一滴之金屬墨之狀態之圖。如圖17(b)所示,由於設有分隔壁BA,因此塗布於閘極形成區域52之金屬墨係不擴散而被保持。藉此方式,於閘極形成區域52整體塗布金屬墨。As shown in Fig. 17 (a), the droplet applying device 120G applies the metallic ink in the order of, for example, 1 to 9 in the gate forming region 52 of the sheet substrate FB on which the partition wall BA is formed. This order is, for example, in the order in which the metallic inks are applied in a straight line to each other. Fig. 17 (b) is a view showing, for example, a state in which a drop of the metallic ink is applied. As shown in Fig. 17 (b), since the partition wall BA is provided, the metallic ink applied to the gate forming region 52 is not diffused and held. In this way, the metal ink is entirely coated on the gate forming region 52.

於閘極形成區域52塗布金屬墨後,薄片基板FB被搬送以使塗布有該金屬墨之部分位於熱處理裝置BK之-Z側。熱處理裝置BK係對塗布於薄片基板FB上之金屬墨進行熱處理,使該金屬墨乾燥。圖18(a)係顯示使金屬墨乾燥後之閘極形成區域52之狀態之圖。如圖18(a)所示,藉由使金屬墨乾燥,使金屬墨所含之導電體積層為薄膜狀。此種薄膜狀之導電體形成於閘極形成區域52整體,如圖18(b)所示,於薄片基板FB上形成閘極匯流排線GBL及閘極電極G。After the metal ink is applied to the gate forming region 52, the sheet substrate FB is conveyed so that the portion coated with the metallic ink is located on the -Z side of the heat treatment device BK. The heat treatment apparatus BK heat-treats the metal ink applied on the sheet substrate FB to dry the metal ink. Fig. 18 (a) is a view showing a state in which the gate forming region 52 is dried after the metallic ink is dried. As shown in Fig. 18 (a), the conductive volume layer contained in the metallic ink is formed into a film shape by drying the metallic ink. The film-shaped conductor is formed on the entire gate forming region 52, and as shown in FIG. 18(b), the gate bus line GBL and the gate electrode G are formed on the sheet substrate FB.

其次,薄片基板FB被搬送至液滴塗布裝置120I之-Z側。在液滴塗布裝置120I於薄片基板FB塗布電氣絕緣性墨。在液滴塗布裝置120I中,例如圖19所示,於通過源極汲極形成區域53之閘極匯流排線GBL上及閘極電極G上塗布電氣絕緣性墨。Next, the sheet substrate FB is conveyed to the -Z side of the droplet applying device 120I. The electrically insulating ink is applied to the sheet substrate FB by the droplet applying device 120I. In the droplet applying device 120I, for example, as shown in FIG. 19, electrically insulating ink is applied onto the gate bus bar line GBL passing through the source drain forming region 53 and the gate electrode G.

在塗布電氣絕緣性墨後,薄片基板FB被搬送至熱處理裝置BK之-Z側,而藉由熱處理裝置BK對該電氣絕緣性墨施以熱處理。藉由此熱處理使電氣絕緣性墨乾燥,而形成閘極絕緣層I。圖19中,雖顯示閘極絕緣層I以橫跨分隔壁BA上之方式形成為圓形之狀態,但並不特別需跨越分隔壁BA而形成。After the application of the electrically insulating ink, the sheet substrate FB is conveyed to the -Z side of the heat treatment apparatus BK, and the electrically insulating ink is heat-treated by the heat treatment apparatus BK. The gate insulating layer I is formed by drying the electrically insulating ink by this heat treatment. In FIG. 19, although the gate insulating layer I is formed in a circular shape so as to straddle the partition wall BA, it is not particularly required to be formed across the partition wall BA.

在形成閘極絕緣層I後,薄片基板FB被搬送至液滴塗布裝置120SD之-Z側。液滴塗布裝置120SD中,於薄片基板FB之源極汲極形成區域53塗布金屬墨。針對源極汲極形成區域53中橫跨閘極絕緣層I之部分,係以例如圖20所示之1~9之順序吐出金屬墨。After the gate insulating layer I is formed, the sheet substrate FB is transferred to the -Z side of the droplet applying device 120SD. In the droplet applying device 120SD, the metallic ink is applied to the source drain formation region 53 of the sheet substrate FB. For the portion of the source drain formation region 53 that straddles the gate insulating layer I, the metallic ink is ejected in the order of, for example, 1 to 9 shown in FIG.

在金屬墨之吐出後,薄片基板FB被搬送至熱處理裝置BK之-Z側,進行金屬墨之乾燥處理。在該乾燥處理後,金屬墨所含之導電體積層為薄膜狀,而形成源極匯流排線SBL、源極電極S、汲極電極D及陽極P。不過,在此階段,係呈源極電極S與汲極電極D之間被連接之狀態。After the discharge of the metallic ink, the sheet substrate FB is conveyed to the -Z side of the heat treatment apparatus BK, and the metal ink is dried. After the drying treatment, the conductive volume layer contained in the metallic ink is in the form of a film, and the source bus bar SBL, the source electrode S, the drain electrode D, and the anode P are formed. However, at this stage, the state in which the source electrode S and the drain electrode D are connected is obtained.

其次,薄片基板FB被搬送至切斷裝置130之-Z側。薄片基板FB在切斷裝置130被切斷源極電極S與汲極電極D之間。圖21係顯示以切斷裝置130切斷源極電極S與汲極電極D之間隔後之狀態之圖。切斷裝置130,係一邊使用電流鏡131調整雷射光LL往薄片基板FB之照射位置,一邊進行切斷。Next, the sheet substrate FB is conveyed to the -Z side of the cutting device 130. The sheet substrate FB is cut between the source electrode S and the drain electrode D at the cutting device 130. Fig. 21 is a view showing a state in which the cutting device 130 cuts off the interval between the source electrode S and the drain electrode D. The cutting device 130 performs cutting while adjusting the irradiation position of the laser light LL to the sheet substrate FB using the current mirror 131.

在切斷源極電極S與汲極電極D之間後,薄片基板FB被搬送至液滴塗布裝置OS之-Z側。在液滴塗布裝置OS,於薄片基板FB上形成有機半導體層OS。於薄片基板FB上之中重疊於閘極電極G之區域,以橫跨源極電極S及汲極電極D之方式被吐出有機半導體墨。After the source electrode S and the drain electrode D are cut, the sheet substrate FB is transported to the -Z side of the droplet applying device OS. In the droplet applying device OS, an organic semiconductor layer OS is formed on the sheet substrate FB. The organic semiconductor ink is discharged so as to straddle the source electrode S and the drain electrode D in the region of the sheet substrate FB which is superposed on the gate electrode G.

在有機半導體墨之吐出後,薄片基板FB被搬送至熱處理裝置BK之-Z側,進行有機半導體墨之乾燥處理。該乾燥處理後,有機半導體墨所含之半導體積層為薄膜狀,而如圖22所示形成有機半導體層OS。藉由以上之步驟,於薄片基板FB上即形成場效型電晶體及連接配線。After the discharge of the organic semiconductor ink, the sheet substrate FB is transferred to the -Z side of the heat treatment apparatus BK, and the organic semiconductor ink is dried. After the drying treatment, the semiconductor laminate contained in the organic semiconductor ink is in the form of a film, and the organic semiconductor layer OS is formed as shown in FIG. By the above steps, the field effect transistor and the connection wiring are formed on the sheet substrate FB.

其次,薄片基板FB被搬送滾筒RR搬送至發光層形成部93。在發光層形成部93,藉由液滴塗布裝置140Re、液滴塗布裝置140Gr、液滴塗布裝置140Bl及熱處理裝置BK分別形成紅色、綠色、藍色之發光層IR。由於於薄片基板FB上形成有分隔壁BA,因此即使在不以熱處理裝置BK對紅色、綠色及藍色之發光層IR進行熱處理而持續塗布之情形,亦不會因溶液往相鄰之像素區域溢出而產生混色。Next, the sheet substrate FB is transported to the light-emitting layer forming portion 93 by the transport roller RR. In the light-emitting layer forming portion 93, red, green, and blue light-emitting layers IR are formed by the droplet applying device 140Re, the droplet applying device 140Gr, the droplet applying device 140B1, and the heat treatment device BK, respectively. Since the partition wall BA is formed on the sheet substrate FB, even if the red, green, and blue light-emitting layers IR are not heat-treated by the heat treatment device BK, the coating is continued, and the solution is not moved to the adjacent pixel region. Overflow produces a color mixture.

在發光層IR之形成後,薄片基板FB係經過液滴塗布裝置140I及熱處理裝置BK而形成絕緣層I,經過液滴塗布裝置140IT及熱處理裝置BK而形成透明電極IT。經過如上述之步驟,於薄片基板FB上形成圖1所示之有機EL元件50。After the formation of the light-emitting layer IR, the sheet substrate FB forms the insulating layer I through the droplet applying device 140I and the heat treatment device BK, and forms the transparent electrode IT through the droplet applying device 140IT and the heat treatment device BK. Through the above steps, the organic EL element 50 shown in Fig. 1 is formed on the sheet substrate FB.

元件形成動作中,為了防止在如上述地一邊使薄片基板FB搬送、一邊形成有機EL元件50之過程中,薄片基板FB往X方向、Y方向及θZ方向偏移,係進行對準動作。以下,參照圖23說明對準動作。In the element forming operation, in order to prevent the sheet substrate FB from being displaced in the X direction, the Y direction, and the θZ direction while the organic EL element 50 is being formed while the sheet substrate FB is being conveyed as described above, the alignment operation is performed. Hereinafter, the alignment operation will be described with reference to FIG.

對準動作中,設於各部之複數個對準攝影機CA(CA1~CA8)適當檢測出形成於薄片基板FB之對準標記AM,對控制部104送出檢測結果。在控制部104,根據送來之檢測結果進行對準動作。In the alignment operation, the plurality of alignment cameras CA (CA1 to CA8) provided in the respective portions appropriately detect the alignment mark AM formed on the sheet substrate FB, and send the detection result to the control unit 104. The control unit 104 performs an alignment operation based on the detection result sent.

例如,控制部104係根據對準攝影機CA(CA1~CA8)所檢測出之對準標記AM之攝影間隔等檢測出薄片基板FB之進給速度,判斷滾筒RR是否以例如既定速度旋轉。在判斷滾筒RR非以既定速度旋轉時,控制部104係發出滾筒RR旋轉速度之調整之指令施加反饋。For example, the control unit 104 detects the feed speed of the sheet substrate FB based on the photographing interval of the alignment mark AM detected by the alignment cameras CA (CA1 to CA8), and determines whether or not the drum RR is rotated at, for example, a predetermined speed. When it is determined that the drum RR is not rotating at a predetermined speed, the control unit 104 issues a command application feedback that adjusts the rotation speed of the drum RR.

又,例如控制部104係根據對準標記AM之攝影結果,檢測出對準標記AM之Y軸方向之位置是否偏移,而檢測出薄片基板FB之Y軸方向之位置偏移之有無。在檢測出位置偏移時,控制部104係檢測出在搬送薄片基板FB之狀態下位置偏移是持續何種程度之時間。Further, for example, the control unit 104 detects whether or not the position of the alignment mark AM in the Y-axis direction is shifted based on the photographing result of the alignment mark AM, and detects the presence or absence of the positional shift of the sheet substrate FB in the Y-axis direction. When the positional shift is detected, the control unit 104 detects the extent to which the positional shift continues in the state in which the sheet substrate FB is conveyed.

若位置偏移之時間為短時間,即藉由切換液滴塗布裝置120之複數個嘴122中塗布液滴之嘴122來對應。若薄片基板FB之Y軸方向之偏移長時間持續,則藉由滾筒RR之移動進行薄片基板FB之Y軸方向之位置修正。If the time of the positional shift is short, that is, by switching the nozzles 122 for applying the liquid droplets in the plurality of nozzles 122 of the droplet applying device 120. When the shift in the Y-axis direction of the sheet substrate FB continues for a long time, the position correction of the sheet substrate FB in the Y-axis direction is performed by the movement of the drum RR.

又,例如控制部104係根據對準攝影機CA所檢測出之對準標記AM之X軸及Y軸方向之位置,檢測出薄片基板FB是否於θZ方向偏移。在檢測出位置偏移時,控制部104係與Y軸方向之位置偏移之檢測時同樣地,檢測出在搬送薄片基板FB之狀態下位置偏移是持續何種程度之時間。Further, for example, the control unit 104 detects whether or not the sheet substrate FB is shifted in the θZ direction based on the position of the alignment mark AM detected by the alignment camera CA in the X-axis and Y-axis directions. When the positional shift is detected, the control unit 104 detects the extent to which the positional shift continues in the state in which the sheet substrate FB is conveyed, similarly to the detection of the positional shift in the Y-axis direction.

若位置偏移之時間為短時間,即藉由切換液滴塗布裝置120之複數個嘴122中塗布液滴之嘴122來對應。若偏移長時間持續,則使兩個滾筒RR(設於隔著檢測出該偏移之對準攝影機CA之位置)移動於X方向或Y方向,以進行薄片基板FB之θZ方向之位置修正。If the time of the positional shift is short, that is, by switching the nozzles 122 for applying the liquid droplets in the plurality of nozzles 122 of the droplet applying device 120. When the offset continues for a long time, the two rollers RR (positioned at the position of the alignment camera CA with the offset detected) are moved in the X direction or the Y direction to perform position correction in the θZ direction of the sheet substrate FB. .

其次,說明卸除動作。例如於薄片基板FB形成有機EL元件50並回收薄片基板FB後,將作為基板供給部101使用之基板匣1從基板處理部102卸除。Next, the removal operation will be described. For example, after the organic EL element 50 is formed on the sheet substrate FB and the sheet substrate FB is collected, the substrate 1 used as the substrate supply unit 101 is removed from the substrate processing unit 102.

圖24係顯示基板匣1之卸除動作之圖。Fig. 24 is a view showing the removal operation of the substrate 匣1.

卸除動作中,使座部3往-X方向移動而從供給側連接部102A卸除。藉由卸除座部3,卡合構件與移動構件47之間之卡合狀態解除,故彈性構件46之彈性力使蓋構件41成為閉狀態。如上述,閉塞部4在座部3與基板處理部102連接之狀態下蓋構件41成為開狀態,在座部3與基板處理部102不連接之狀態下蓋構件41成為閉狀態。In the unloading operation, the seat portion 3 is moved in the -X direction and is removed from the supply side connecting portion 102A. When the seat portion 3 is removed, the engagement state between the engaging member and the moving member 47 is released, and the elastic force of the elastic member 46 causes the lid member 41 to be in a closed state. As described above, the lid member 41 is opened in a state where the seat portion 3 is connected to the substrate processing portion 102, and the lid member 41 is in a closed state in a state where the seat portion 3 and the substrate processing portion 102 are not connected.

如上述,根據本實施形態,由於具有:具有搬出搬入薄片基板FB之開口部34且收容通過該開口部34之薄片基板FB之匣本體2;設於該匣本體2且對供給側連接部102A及回收側連接部102B可裝卸地連接之座部3;對應於該座部3與供給側連接部102A及回收側連接部102B之間之連接狀態閉塞前述開口部34之閉塞部4,故可防止從開口部34塵埃等異物之侵入。藉此,可防止於薄片基板FB有異物附著。As described above, according to the present embodiment, the main body 2 having the opening 34 that carries in and out of the sheet substrate FB and housing the sheet substrate FB passing through the opening 34 is provided in the main body 2 and on the supply side connecting portion 102A. The seat portion 3 that is detachably connected to the recovery-side connecting portion 102B; the blocking portion 4 of the opening portion 34 is closed in accordance with the connection state between the seat portion 3 and the supply-side connecting portion 102A and the collecting-side connecting portion 102B. Intrusion of foreign matter such as dust from the opening portion 34 is prevented. Thereby, it is possible to prevent foreign matter from adhering to the sheet substrate FB.

此外,利用本實施形態,可使基板匣1對對象物(例如基板處理部102)容易裝卸。Further, according to the present embodiment, the substrate 1 can be easily attached to and detached from the object (for example, the substrate processing unit 102).

圖25係顯示一實施形態之基板處理系統SYS之構成之圖。以下之說明中,關於與上述實施形態相同或同等之構成要素給予相同符號並將其說明省略或簡化。Fig. 25 is a view showing the configuration of a substrate processing system SYS according to an embodiment. In the following description, the same or equivalent components as those in the above-described embodiments are denoted by the same reference numerals, and their description is omitted or simplified.

如圖25所示,基板處理系統SYS具有基板製造裝置(第1處理裝置)201、基板處理裝置(第2處理裝置)202及中繼裝置(基板中繼裝置)203。基板製造裝置201、基板處理裝置202係例如設置於不同生產線、不同地點、不同工場等。As shown in FIG. 25, the substrate processing system SYS includes a substrate manufacturing apparatus (first processing apparatus) 201, a substrate processing apparatus (second processing apparatus) 202, and a relay apparatus (substrate relay apparatus) 203. The substrate manufacturing apparatus 201 and the substrate processing apparatus 202 are provided, for example, on different production lines, at different locations, in different workshops, and the like.

基板製造裝置201係以製造例如在上述實施形態已說明之具有可撓性之帶狀之薄片基板FB做為第1處理之裝置。基板製造裝置201具有基板製造部211及控制部212。藉由控制部212之控制於基板製造部211製造薄片基板FB。The substrate manufacturing apparatus 201 is a device that manufactures, for example, the flexible sheet substrate FB described in the above embodiment as the first processing. The substrate manufacturing apparatus 201 includes a substrate manufacturing unit 211 and a control unit 212. The sheet substrate FB is manufactured by the substrate manufacturing unit 211 by the control unit 212.

基板處理裝置202係以於薄片基板FB形成以圖3等顯示之有機EL元件50做為第2處理之裝置。基板處理裝置202具有基板處理部222、基板回收部223及控制部224。基板處理部222、基板回收部223及控制部224係與以圖2等顯示之基板處理部102、基板回收部103及控制部104為相同之構成。The substrate processing apparatus 202 is formed by forming the organic EL element 50 shown in FIG. 3 or the like as the second processing on the sheet substrate FB. The substrate processing apparatus 202 includes a substrate processing unit 222, a substrate collection unit 223, and a control unit 224. The substrate processing unit 222, the substrate collection unit 223, and the control unit 224 have the same configuration as the substrate processing unit 102, the substrate collection unit 103, and the control unit 104 shown in FIG.

中繼裝置203係形成為可裝卸地連接於基板製造裝置201及基板處理裝置202雙方。具體而言,中繼裝置203係透過座部3連接於設於基板製造裝置201之基板製造部211之連接部211A及設於基板處理裝置202之基板處理部222之連接部222A。另外,連接部211A及連接部222A之構成係與以圖2等顯示之供給側連接部102A為相同之構成。The relay device 203 is formed to be detachably connected to both the substrate manufacturing apparatus 201 and the substrate processing apparatus 202. Specifically, the relay device 203 is connected to the connection portion 211A of the substrate manufacturing unit 211 provided in the substrate manufacturing apparatus 201 and the connection portion 222A of the substrate processing unit 222 provided in the substrate processing apparatus 202 through the seat portion 3. The configuration of the connecting portion 211A and the connecting portion 222A is the same as that of the supply-side connecting portion 102A shown in FIG. 2 and the like.

中繼裝置203係回收在基板製造裝置201製造之薄片基板FB並往基板處理裝置202供給之裝置。做為中繼裝置203係使用例如以圖2等顯示之基板匣1。關於中繼裝置203之詳細之構成省略說明。The relay device 203 is a device that collects the sheet substrate FB manufactured by the substrate manufacturing apparatus 201 and supplies it to the substrate processing apparatus 202. As the relay device 203, for example, the substrate 1 shown in Fig. 2 or the like is used. The detailed configuration of the relay device 203 will be omitted.

在如上述構成之基板處理系統SYS中,先使中繼裝置203連接於基板製造裝置201之連接部211A。在將中繼裝置203連接於連接部211A後,從基板製造部211對中繼裝置203供給薄片基板FB。中繼裝置203以與以圖10及11等顯示之動作同樣之動作將薄片基板FB捲取回收。In the substrate processing system SYS configured as described above, the relay device 203 is first connected to the connection portion 211A of the substrate manufacturing apparatus 201. After the relay device 203 is connected to the connection portion 211A, the substrate substrate FB is supplied from the substrate manufacturing unit 211 to the relay device 203. The relay device 203 winds up and collects the sheet substrate FB in the same manner as the operations shown in FIGS. 10 and 11 and the like.

此時,從例如控制部212往中繼裝置203之資訊處理部IC(參照圖5)係發送例如基板製造裝置201之節拍時間、產率等資訊或中繼裝置203之搬送速度、滾筒部26之捲取、送出速度等資訊、顯示全製程或處理完畢之製程等之製程資訊、薄片基板FB之剩餘長度或全長等關於薄片基板FB之資訊等處理資訊。In this case, information such as the tact time and the yield of the substrate manufacturing apparatus 201, the conveyance speed of the relay device 203, and the roller unit 26 are transmitted from the control unit 212 to the information processing unit IC (see FIG. 5) of the relay device 203. Information such as the information on the sheet substrate FB, such as the information on the sheet substrate FB, such as the information on the sheet substrate FB, such as the information on the sheet substrate FB, and the like, the process information such as the full-process or the processed process, and the remaining length or the total length of the sheet substrate FB.

發送至資訊處理部IC之上述處理資訊以資訊處理部IC之通信部CR接收,儲存於儲存部MR或顯示於顯示部29。此外,對資訊處理部IC亦發送關於以中繼裝置203之檢測部21c檢側之薄片基板FB之長度之資訊。The processing information transmitted to the information processing unit IC is received by the communication unit CR of the information processing unit IC, and stored in the storage unit MR or displayed on the display unit 29. Further, the information processing unit IC also transmits information on the length of the sheet substrate FB on the side of the detection unit 21c of the relay device 203.

其次,將已回收薄片基板FB之中繼裝置203以卡車等搬送系統TR往基板處理裝置202搬送。在將中繼裝置203搬送至基板處理裝置202後,將中繼裝置203以以圖12及圖13等顯示之流程連接於基板處理裝置202之連接部222A,一邊從中繼裝置203供給薄片基板FB一邊於基板處理部222於薄片基板FB上形成有機EL元件50。Next, the relay device 203 of the recovered sheet substrate FB is transported to the substrate processing apparatus 202 by a transport system TR such as a truck. After the relay device 203 is transported to the substrate processing device 202, the relay device 203 is connected to the connection portion 222A of the substrate processing device 202 in the flow shown in FIGS. 12 and 13 and the like, and the sheet substrate FB is supplied from the relay device 203. The organic EL element 50 is formed on the sheet substrate FB on the substrate processing unit 222.

此時,例如控制部224在與中繼裝置203之資訊處理部IC之間進行通信,接收儲存於資訊處理部IC之處理資訊。控制部224基於接收之處理資訊一邊調整例如薄片基板FB之搬送速度或熱轉印滾筒115及熱處理裝置BK之加熱時間或加熱溫度等與接收之處理資訊關連之動作一邊使形成有機EL元件50之各步驟進行。形成有有機EL元件50之薄片基板FB係切斷為例如面板狀,以基板回收部223回收。At this time, for example, the control unit 224 communicates with the information processing unit IC of the relay device 203, and receives the processing information stored in the information processing unit IC. The control unit 224 adjusts the transport speed of the sheet substrate FB, the heating time of the heat transfer roller 115 and the heat treatment device BK, or the heating temperature, etc., based on the received processing information, to form the organic EL element 50 while operating in association with the received processing information. Each step is performed. The sheet substrate FB on which the organic EL element 50 is formed is cut into, for example, a panel shape, and is collected by the substrate collecting portion 223.

如上述,利用本實施形態,由於具備:進行製造具有可撓性之薄片基板FB之處理做為第1處理之基板製造裝置201、以在薄片基板FB之製造後進行於該薄片基板FB形成有機EL元件50之處理做為第2處理之基板處理裝置202、從基板製造裝置201回收薄片基板FB並將回收之薄片基板FB往基板處理裝置202供給之中繼裝置203,做為中繼裝置203使用上述基板匣1,故可避免基板製造裝置201與基板處理裝置202之間於薄片基板FB有塵埃等附著。此外,由於可使用設於中繼裝置203之資訊處理部IC對基板處理裝置202供給基板製造裝置201之處理資訊,使用該處理資訊於基板處理裝置202進行處理,故基板處理裝置202之處理效率上升。此外,本實施形態中,由於做為中繼裝置203使用上述基板匣1,故可容易地掌握薄片基板FB之長度或剩餘長度。此外,本實施形態中,由於做為中繼裝置203使用上述基板匣1,故可如容易地將複數之步驟細分化為例如第1處理或第2處理。As described above, in the present embodiment, the substrate manufacturing apparatus 201 that performs the process of manufacturing the flexible sheet substrate FB is used as the first processing, and the organic sheet is formed on the sheet substrate FB after the sheet substrate FB is manufactured. The processing of the EL element 50 is performed as the substrate processing apparatus 202 of the second processing, the relay apparatus 203 which collects the sheet substrate FB from the substrate manufacturing apparatus 201, and supplies the collected sheet substrate FB to the substrate processing apparatus 202 as the relay apparatus 203. Since the substrate 匣1 is used, it is possible to prevent dust or the like from adhering to the sheet substrate FB between the substrate manufacturing apparatus 201 and the substrate processing apparatus 202. In addition, since the processing information of the substrate manufacturing apparatus 201 can be supplied to the substrate processing apparatus 202 by using the information processing unit IC provided in the relay device 203, the processing information can be processed by the substrate processing apparatus 202, so that the processing efficiency of the substrate processing apparatus 202 is performed. rise. Further, in the present embodiment, since the substrate 匣1 is used as the relay device 203, the length or the remaining length of the sheet substrate FB can be easily grasped. Further, in the present embodiment, since the substrate 匣1 is used as the relay device 203, the plurality of steps can be easily subdivided into, for example, the first processing or the second processing.

圖26係顯示一實施形態之基板處理系統SYS2之構成之圖。以下之說明中,關於與上述實施形態相同或同等之構成要素給予相同符號並將其說明省略或簡化。Fig. 26 is a view showing the configuration of a substrate processing system SYS2 of one embodiment. In the following description, the same or equivalent components as those in the above-described embodiments are denoted by the same reference numerals, and their description is omitted or simplified.

如圖26所示,基板處理系統SYS2具有第1基板處理裝置(第1處理裝置)300、第2基板處理裝置(第2處理裝置)310、320及中繼裝置(基板中繼裝置)303。第1基板處理裝置300及第2基板處理裝置310、320係例如設置於相同地點、或相同工場內。As shown in FIG. 26, the substrate processing system SYS2 includes a first substrate processing apparatus (first processing apparatus) 300, second substrate processing apparatuses (second processing apparatuses) 310 and 320, and a relay apparatus (substrate relay apparatus) 303. The first substrate processing apparatus 300 and the second substrate processing apparatuses 310 and 320 are provided, for example, at the same place or in the same factory.

第1基板處理裝置300例如係於薄片基板FB形成有機EL元件50之分隔壁BA之裝置。第2基板處理裝置310、320例如係於薄片基板FB形成電極(閘極電極G等)或有機EL元件50之發光層IR、透明電極ITO之裝置。第2基板處理裝置310、320係相同之構成。以下,在說明第2基板處理裝置310、320之構成或動作等時原則上係使第2基板處理裝置310為代表說明,但關於第2基板處理裝置320亦可進行同樣之說明。The first substrate processing apparatus 300 is, for example, a device in which the partition wall BA of the organic EL element 50 is formed on the sheet substrate FB. The second substrate processing apparatuses 310 and 320 are, for example, devices for forming an electrode (gate electrode G or the like) of the sheet substrate FB, a light-emitting layer IR of the organic EL element 50, and a transparent electrode ITO. The second substrate processing apparatuses 310 and 320 have the same configuration. In the following description, the second substrate processing apparatus 310 will be described as a representative in the description of the configuration or operation of the second substrate processing apparatuses 310 and 320. However, the second substrate processing apparatus 320 can be similarly described.

如上述基板處理系統SYS2係形成有機EL元件50之裝置分為第1基板處理裝置300與第2基板處理裝置310、320之2個種類之裝置之構成。中繼裝置303係從第1基板處理裝置300往第2基板處理裝置310、320授受(中繼)薄片基板FB之裝置。本實施形態中,做為中繼裝置303係使用與於圖5等顯示者具有相同構成之基板匣1。The apparatus for forming the organic EL element 50 in the substrate processing system SYS2 is divided into two types of devices of the first substrate processing apparatus 300 and the second substrate processing apparatuses 310 and 320. The relay device 303 is a device that transfers (relays) the sheet substrate FB from the first substrate processing device 300 to the second substrate processing devices 310 and 320. In the present embodiment, as the relay device 303, the substrate 1 having the same configuration as that shown in Fig. 5 or the like is used.

第1基板處理裝置300具有基板供給部301、基板處理部302、第1控制部304、第2控制部305及保護基板供給部306。基板供給部301係與以圖2顯示之基板供給部101為相同之構成。基板處理部302係分別具有與以圖2顯示之基板處理裝置100之分隔壁形成部91為相同之構成,於與基板供給部301之連接部分設有供給側連接部302A。供給側連接部302A之構成與以圖2顯示之供給側連接部102A為相同構成。如上述第1基板處理裝置300具有與以圖2等顯示之基板處理裝置100之從基板供給部101至基板處理部102之分隔壁形成部91之構成相同之構成。The first substrate processing apparatus 300 includes a substrate supply unit 301, a substrate processing unit 302, a first control unit 304, a second control unit 305, and a protective substrate supply unit 306. The substrate supply unit 301 has the same configuration as the substrate supply unit 101 shown in FIG. 2 . Each of the substrate processing units 302 has the same configuration as the partition wall forming portion 91 of the substrate processing apparatus 100 shown in FIG. 2, and a supply-side connecting portion 302A is provided at a portion to be connected to the substrate supply unit 301. The configuration of the supply-side connecting portion 302A is the same as that of the supply-side connecting portion 102A shown in FIG. The first substrate processing apparatus 300 has the same configuration as the partition wall forming unit 91 of the substrate processing apparatus 101 to the substrate processing unit 102 shown in FIG. 2 and the like.

於基板處理部302之+X側端部設有連接於中繼裝置303之座部3之回收側連接部302B。回收側連接部302B係與供給側連接部302A為相同之構成。第1控制部304接收儲存於基板供給部301之資訊處理部IC之處理資訊,基於該處理資訊控制基板處理部302之動作(例如,關於處理或製程之動作)。第2控制部305係將基板供給部301、基板處理部302、薄片基板FB等之處理資訊往中繼裝置303之資訊處理部IC發送。做為處理資訊,可舉出例如與於上述實施形態記載之處理資訊同樣之內容之資訊。亦可為第1基板處理裝置300具有不圖示之控制裝置,該控制裝置統籌控制及管理第1控制部304及第2控制部305之構成。保護基板供給部306係設於例如基板處理部302之+X側端部。A recovery side connection portion 302B connected to the seat portion 3 of the relay device 303 is provided at the +X side end portion of the substrate processing portion 302. The collection-side connection portion 302B has the same configuration as the supply-side connection portion 302A. The first control unit 304 receives the processing information stored in the information processing unit IC of the substrate supply unit 301, and controls the operation of the substrate processing unit 302 (for example, the operation of the processing or the process) based on the processing information. The second control unit 305 transmits processing information such as the substrate supply unit 301, the substrate processing unit 302, and the sheet substrate FB to the information processing unit IC of the relay device 303. As the processing information, for example, information similar to the processing information described in the above embodiment can be cited. The first substrate processing apparatus 300 may have a control device (not shown) that integrally controls and manages the configuration of the first control unit 304 and the second control unit 305. The protective substrate supply unit 306 is provided, for example, at the +X side end portion of the substrate processing unit 302.

第2基板處理裝置310具有基板處理部311、基板回收部312、第1控制部314及第2控制部315。基板處理部311具有與以圖2顯示之基板處理裝置100之電極形成部92及發光層形成部93為相同之構成。基板處理部311於-X側端部具有供給側連接部311A,於+X側端部具有回收側連接部311B。供給側連接部311A及回收側連接部311B分別與上述供給側連接部302A及回收側連接部302B為相同構成。The second substrate processing apparatus 310 includes a substrate processing unit 311 , a substrate collection unit 312 , a first control unit 314 , and a second control unit 315 . The substrate processing unit 311 has the same configuration as the electrode forming portion 92 and the light-emitting layer forming portion 93 of the substrate processing apparatus 100 shown in FIG. 2 . The substrate processing unit 311 has a supply side connection portion 311A at the -X side end portion and a recovery side connection portion 311B at the +X side end portion. The supply-side connecting portion 311A and the recovery-side connecting portion 311B have the same configuration as the supply-side connecting portion 302A and the collecting-side connecting portion 302B, respectively.

於供給側連接部311A可裝卸地連接有上述中繼裝置303。第1控制部314接收儲存於中繼裝置303之資訊處理部IC之處理資訊,基於該處理資訊控制基板處理部311之動作(例如,關於處理或製程之動作)。第2控制部315係將中繼裝置303、基板處理部311、薄片基板FB等之處理資訊往基板回收部312之資訊處理部IC發送。做為處理資訊,可舉出例如與於上述實施形態記載之處理資訊同樣之內容之資訊。The relay device 303 is detachably connected to the supply side connecting portion 311A. The first control unit 314 receives the processing information stored in the information processing unit IC of the relay device 303, and controls the operation of the substrate processing unit 311 (for example, the operation of the processing or the process) based on the processing information. The second control unit 315 transmits the processing information of the relay device 303, the substrate processing unit 311, and the sheet substrate FB to the information processing unit IC of the substrate collection unit 312. As the processing information, for example, information similar to the processing information described in the above embodiment can be cited.

其次,如上述構成之基板處理系統SYS2中,先於基板匣1收容薄片基板FB,於第1基板處理裝置300使該基板匣1做為基板供給部301連接於基板處理部302之供給側連接部302A。此基板匣1係做為基板供給部301使用。此外,使空基板匣1做為中繼裝置303連接於基板處理部302之回收側連接部302B。Then, in the substrate processing system SYS2 configured as described above, the sheet substrate FB is placed in the substrate 匣1, and the substrate 匣1 is connected to the supply side of the substrate processing unit 302 as the substrate supply unit 301 in the first substrate processing apparatus 300. Part 302A. This substrate 匣 1 is used as the substrate supply unit 301. Further, the empty substrate 匣1 is connected to the recovery side connecting portion 302B of the substrate processing unit 302 as a relay device 303.

其次,從基板供給部301使薄片基板FB對基板處理部302供給,於基板處理部302形成分隔壁BA。此時,控制部304及控制部305在與基板供給部301之資訊處理部IC及中繼裝置303之資訊處理部IC之間進行通信,接收儲存於資訊處理部IC之處理資訊。控制部304及控制部305基於接收之處理資訊一邊調整例如薄片基板FB之搬送速度或熱轉印滾筒115之加熱時間或加熱溫度等與接收之處理資訊關連之動作一邊形成分隔壁BA。Next, the substrate supply unit 301 supplies the sheet substrate FB to the substrate processing unit 302, and the substrate processing unit 302 forms the partition wall BA. At this time, the control unit 304 and the control unit 305 communicate with the information processing unit IC of the substrate supply unit 301 and the information processing unit IC of the relay device 303, and receive the processing information stored in the information processing unit IC. The control unit 304 and the control unit 305 form the partition wall BA while adjusting the conveyance speed of the sheet substrate FB, the heating time of the heat transfer roller 115, the heating temperature, and the like in association with the received processing information, based on the received processing information.

形成有分隔壁BA之薄片基板FB係從基板處理部302往中繼裝置303送出,以中繼裝置303捲取回收成捲軸狀。中繼裝置303係以保護基板PB配置於薄片基板FB之中形成有分隔壁BA之面之方式回收薄片基板FB。The sheet substrate FB on which the partition wall BA is formed is sent from the substrate processing unit 302 to the relay device 303, and is taken up by the relay device 303 and collected in a reel shape. In the relay device 303, the sheet substrate FB is collected such that the protective substrate PB is disposed on the surface of the sheet substrate FB where the partition wall BA is formed.

圖27~圖29係顯示在基板回收部103之薄片基板FB之回收之樣子之圖。圖27~圖29中,為了容易判別圖,係以省略一部分構成之狀態顯示。27 to 29 are views showing how the sheet substrate FB of the substrate collecting unit 103 is recovered. In FIGS. 27 to 29, in order to easily discriminate the map, a state in which a part of the configuration is omitted is displayed.

回收動作中係如圖27所示,於與將薄片基板FB插入基板匣1之開口部34同時從第2開口部35插入保護基板PB。如圖26及圖27所示,保護基板PB係從例如上述之保護基板供給部306供給。In the collection operation, as shown in FIG. 27, the protective substrate PB is inserted from the second opening 35 at the same time as the opening 34 of the substrate FB1 is inserted into the substrate FB. As shown in FIGS. 26 and 27, the protective substrate PB is supplied from, for example, the above-described protective substrate supply unit 306.

插入之薄片基板FB及保護基板PB係如圖28所示,分別以基板導引部22及第2基板導引部37導引,於匯合部39匯合。在匯合部39匯合之薄片基板FB及保護基板PB係如圖29所示在匯合之狀態下被搬送部21搬送,被張力滾筒21a與測定滾筒21b按壓而密著。薄片基板FB及保護基板PB係在密著之狀態下被滾筒部26捲取回收。As shown in FIG. 28, the inserted sheet substrate FB and the protective substrate PB are guided by the substrate guiding portion 22 and the second substrate guiding portion 37, respectively, and merged at the junction portion 39. As shown in FIG. 29, the sheet substrate FB and the protective substrate PB which are merged at the junction portion 39 are conveyed by the transport portion 21 in a state of being merged, and are pressed and held by the tension roller 21a and the measurement drum 21b. The sheet substrate FB and the protective substrate PB are taken up and collected by the drum portion 26 in a state of being adhered.

其次,以堆高機等搬送系統TR2將已回收密著有保護基板PB之薄片基板FB之中繼裝置303往第2基板處理裝置310搬送。搬送後,使中繼裝置303以以圖12及圖13等顯示之流程連接於第2基板處理裝置310之供給側連接部311A,並將空基板匣1做為基板回收部312連接於回收側連接部311B。在將空基板匣1連接於回收側連接部311B後,一邊從中繼裝置303供給薄片基板FB一邊於基板處理部311於薄片基板FB上形成電極、發光層IR及透明電極ITO。Then, the relay device 303 that has collected the sheet substrate FB on which the protective substrate PB is sealed is transported to the second substrate processing device 310 by the transport system TR2 such as a stacker. After the transfer, the relay device 303 is connected to the supply-side connection portion 311A of the second substrate processing device 310 in the flow shown in FIG. 12 and FIG. 13 and the empty substrate 匣1 is connected to the recovery side as the substrate collection portion 312. Connection portion 311B. After the empty substrate 匣1 is connected to the recovery-side connection portion 311B, the electrode, the light-emitting layer IR, and the transparent electrode ITO are formed on the substrate FB on the substrate processing unit 311 while the sheet substrate FB is supplied from the relay device 303.

此時,例如控制部314及315在與中繼裝置303之資訊處理部IC及基板回收部312之資訊處理部IC之間進行通信,接收儲存於各資訊處理部IC之處理資訊。控制部314及315基於接收之處理資訊一邊調整例如薄片基板FB之搬送速度或熱處理裝置BK之加熱時間或加熱溫度等與接收之處理資訊關連之動作一邊形成電極、發光層IR及透明電極ITO。At this time, for example, the control units 314 and 315 communicate with the information processing unit IC of the relay device 303 and the information processing unit IC of the substrate collection unit 312, and receive the processing information stored in each information processing unit IC. The control units 314 and 315 adjust the moving speed of the sheet substrate FB or the heating time or the heating temperature of the heat treatment device BK to form the electrode, the light-emitting layer IR, and the transparent electrode ITO, based on the received processing information.

此外,在第1基板處理裝置300之處理速度與第2基板處理裝置310之處理速度為例如2:1之場合等第1基板處理裝置300比第2基板處理裝置310之處理速度大(節拍時間小)之場合,可使中繼裝置303之中繼對象增加。本實施形態中。做為中繼裝置303之中繼對象,係增加例如第2基板處理裝置320。其結果,在第1基板處理裝置300處理之薄片基板FB在第2基板處理裝置310及320兩處平行處理,處理速度較小(節拍時間大)之線增加。In addition, when the processing speed of the first substrate processing apparatus 300 and the processing speed of the second substrate processing apparatus 310 are, for example, 2:1, the processing speed of the first substrate processing apparatus 300 is larger than that of the second substrate processing apparatus 310 (takt time). In the case of small), the relay object of the relay device 303 can be increased. In this embodiment. As the relay target of the relay device 303, for example, the second substrate processing device 320 is added. As a result, the sheet substrate FB processed by the first substrate processing apparatus 300 is processed in parallel at the second substrate processing apparatuses 310 and 320, and the line of the processing speed is small (the tact time is large) increases.

如上述薄片基板FB經過第1基板處理裝置300之處理與第2基板處理裝置310之處理才處理完成,故在將第1基板處理裝置300與第2基板處理裝置310各用1台之場合(或連續進行處理之場合),基板處理系統SYS2全體之處理速度會成為第1基板處理裝置300與第2基板處理裝置310中處理速度較小之裝置之處理速度。When the sheet substrate FB is processed by the processing of the first substrate processing apparatus 300 and the processing by the second substrate processing apparatus 310, when the first substrate processing apparatus 300 and the second substrate processing apparatus 310 are used one by one ( When the processing is continued, the processing speed of the entire substrate processing system SYS2 is the processing speed of the processing device having a small processing speed in the first substrate processing apparatus 300 and the second substrate processing apparatus 310.

相對於上述做法,本實施形態中,由於使用2台處理速度較小之第2基板處理裝置310(第2基板處理裝置310、320)而使線數增加,故彌補處理速度之差,可發揮第1基板處理裝置300之處理速度。藉此,可避免基板處理系統SYS2全體之處理效率降低。With the above-described method, in the second embodiment, the number of lines is increased by using the second substrate processing apparatuses 310 (the second substrate processing apparatuses 310 and 320) having a small processing speed, so that the difference in processing speed can be compensated. The processing speed of the first substrate processing apparatus 300. Thereby, the processing efficiency of the entire substrate processing system SYS2 can be prevented from being lowered.

藉由於形成有分隔壁BA之薄片基板FB形成電極、發光層IR及透明電極ITO,於薄片基板FB上形成有機EL元件50。形成有有機EL元件50之薄片基板FB係與於圖27~圖29顯示之動作流程同樣地以例如基板回收部312捲取回收。The organic EL element 50 is formed on the sheet substrate FB by forming the electrode, the light-emitting layer IR, and the transparent electrode ITO by the sheet substrate FB on which the partition wall BA is formed. The sheet substrate FB on which the organic EL element 50 is formed is wound up and collected by, for example, the substrate collecting portion 312 in the same manner as the operation flow shown in FIGS. 27 to 29 .

如上述,利用本實施形態,由於具備於薄片基板FB進行分隔壁BA之形成處理做為第1處理之第1基板處理裝置300、於分隔壁BA形成處理後之薄片基板FB進行電極、發光層IR及透明電極ITO之形成處理做為第2處理之第2基板處理裝置310、從第1基板處理裝置300回收薄片基板FB並將回收之薄片基板FB往第2基板處理裝置310供給之中繼裝置303,做為中繼裝置303使用本發明之之基板匣1,故可避免於設置於相同地點或工場內之第1基板處理裝置300與第2基板處理裝置310之間於薄片基板FB有異物附著。此外,由於可使用設於基板匣1之資訊處理部IC收發處理資訊,使用該處理資訊於基板處理部302及311進行處理,故基板處理系統SYS2之全體處理效率上升。As described above, in the present embodiment, the first substrate processing apparatus 300 that performs the formation process of the partition wall BA on the sheet substrate FB, and the sheet substrate FB that has been subjected to the partition wall BA formation process are provided with electrodes and light-emitting layers. The formation of the IR and the transparent electrode ITO is performed as the second substrate processing apparatus 310 of the second processing, the sheet substrate FB is recovered from the first substrate processing apparatus 300, and the collected sheet substrate FB is supplied to the second substrate processing apparatus 310. Since the device 303 uses the substrate 1 of the present invention as the relay device 303, it is possible to prevent the substrate substrate FB from being disposed between the first substrate processing device 300 and the second substrate processing device 310 at the same place or in the factory. Foreign matter adheres. Further, since the information processing unit IC provided in the substrate 1 can transmit and receive processing information, and the processing information is processed by the substrate processing units 302 and 311, the overall processing efficiency of the substrate processing system SYS2 increases.

另外,於其他之一例中,第1基板處理裝置300例如係於薄片基板FB形成有機EL元件50之分隔壁BA或電極(閘極電極G等)之裝置。第2基板處理裝置310、320例如係於薄片基板FB形成有機EL元件50之發光層IR、透明電極ITO之裝置。In the other example, the first substrate processing apparatus 300 is a device in which the partition wall BA or the electrode (the gate electrode G or the like) of the organic EL element 50 is formed on the sheet substrate FB. The second substrate processing apparatuses 310 and 320 are, for example, devices in which the light-emitting layer IR of the organic EL element 50 and the transparent electrode ITO are formed on the sheet substrate FB.

本例中,藉由於形成有分隔壁BA及電極之薄片基板FB形成發光層IR及透明電極ITO,於薄片基板FB上形成有機EL元件50。形成有有機EL元件50之薄片基板FB係與於圖27~圖29顯示之動作流程同樣地以例如基板回收部312捲取回收。In this example, the organic EL element 50 is formed on the sheet substrate FB by forming the light-emitting layer IR and the transparent electrode ITO by the sheet substrate FB on which the partition wall BA and the electrode are formed. The sheet substrate FB on which the organic EL element 50 is formed is wound up and collected by, for example, the substrate collecting portion 312 in the same manner as the operation flow shown in FIGS. 27 to 29 .

另外,上述基板處理系統SYS2構成為第2基板處理裝置310之處理速度比第1基板處理裝置300之處理速度高亦無妨。做為此種構成,可舉出例如第1基板處理裝置300具有分隔壁形成部91、電極形成部92,第2基板處理裝置310具有發光層形成部93之構成。在此場合,以與本實施形態同樣之想法,可藉由例如使第1基板處理裝置300之台數比第2基板處理裝置310之台數多來彌補處理速度之差。Further, the substrate processing system SYS2 may be configured such that the processing speed of the second substrate processing apparatus 310 is higher than the processing speed of the first substrate processing apparatus 300. In the above configuration, for example, the first substrate processing apparatus 300 has the partition wall forming portion 91 and the electrode forming portion 92, and the second substrate processing device 310 has the light emitting layer forming portion 93. In this case, in the same manner as in the present embodiment, for example, the difference in the processing speed can be compensated for by making the number of the first substrate processing apparatuses 300 larger than the number of the second substrate processing apparatuses 310.

例如在圖30(a)係顯示設有2台第1基板處理裝置300、設有1台第2基板處理裝置310之基板處理系統SYS2’之構成。由於處理速度較小之第1基板處理裝置300之處理線數變多,故彌補處理速度之差。在此場合,控制例如2台第1基板處理裝置300中之處理之時機,中繼裝置303對第2基板處理裝置310交互連接較理想。藉此,可使第2基板處理裝置310之等待時間極力減少,有效率地進行處理。For example, Fig. 30(a) shows a configuration in which two first substrate processing apparatuses 300 and one substrate processing system SYS2' provided with one second substrate processing apparatus 310 are provided. Since the number of processing lines of the first substrate processing apparatus 300 having a small processing speed increases, the difference in processing speed is compensated. In this case, for example, the timing of the processing in the two first substrate processing apparatuses 300 is controlled, and the relay apparatus 303 is preferably connected to the second substrate processing apparatus 310 in an interactive manner. Thereby, the waiting time of the second substrate processing apparatus 310 can be reduced as much as possible, and the processing can be performed efficiently.

此外,使此基板處理系統SYS2’為例如圖30(b)所示,使第1基板處理裝置300進一步分割為分隔壁形成裝置340與電極形成裝置350之構成(基板處理系統SYS2”)亦無妨。另外,分隔壁形成裝置340具有相當於於圖3顯示之分隔壁形成部91之構成,電極形成裝置350具有相當於於圖3顯示之電極形成部92之構成。第2基板處理裝置310與基板處理系統SYS2’同樣具有發光層形成部93。Further, the substrate processing system SYS2' is, for example, as shown in FIG. 30(b), and the first substrate processing apparatus 300 is further divided into the partition wall forming apparatus 340 and the electrode forming apparatus 350 (substrate processing system SYS2). Further, the partition wall forming device 340 has a configuration corresponding to the partition wall forming portion 91 shown in Fig. 3, and the electrode forming device 350 has a configuration corresponding to the electrode forming portion 92 shown in Fig. 3. The second substrate processing device 310 and The substrate processing system SYS2' also has a light-emitting layer forming portion 93.

分隔壁形成處理、電極形成處理及發光層形成處理之3種處理中,電極形成處理特別需要高對準精度,故處理速度最小。因此,如圖30(b)所示,藉由將處理速度小之電極形成裝置350配置2台使線數增加並將分隔壁形成裝置340及第2基板處理裝置310(具有發光層形成部93)各配置1台,可彌補處理速度之差。In the three kinds of processes of the partition wall forming process, the electrode forming process, and the light-emitting layer forming process, the electrode forming process particularly requires high alignment precision, so the processing speed is the smallest. Therefore, as shown in FIG. 30(b), the number of lines is increased by arranging two electrode forming apparatuses 350 having a small processing speed, and the partition wall forming apparatus 340 and the second substrate processing apparatus 310 (having the light-emitting layer forming portion 93) ) Each configuration can compensate for the difference in processing speed.

在此場合,從分隔壁形成裝置340往電極形成裝置350之中繼裝置303係與上述實施形態之基板處理系統SYS2之中繼裝置303做相同動作,從電極形成裝置350往第2基板處理裝置310之中繼裝置303係與上述基板處理系統SYS2’之中繼裝置303做相同動作。另外,關於此基板處理系統SYS2”,使例如電極形成裝置350為分割為形成閘極電極G之閘極形成裝置與形成源極電極S及汲極電極D之源極汲極形成裝置之構成亦無妨。在此場合,由於源極汲極形成裝置比閘極形成裝置處理速度小,故將源極汲極形成裝置設置複數線較理想。如上述,藉由分割處理速度小之裝置並使分割之裝置之線數增加,可使相對於線數增加之成本減低。In this case, the relay device 303 from the partition wall forming device 340 to the electrode forming device 350 performs the same operation as the relay device 303 of the substrate processing system SYS2 of the above-described embodiment, and proceeds from the electrode forming device 350 to the second substrate processing device. The relay device 303 of 310 performs the same operation as the relay device 303 of the substrate processing system SYS2'. Further, regarding the substrate processing system SYS2", for example, the electrode forming device 350 is formed by dividing the gate forming means for forming the gate electrode G and the source drain forming means for forming the source electrode S and the drain electrode D. In this case, since the source drain forming means has a smaller processing speed than the gate forming means, it is preferable to provide the source drain forming means with a plurality of lines. As described above, by dividing the processing speed by a small device and dividing The increase in the number of lines of the device reduces the cost relative to the increase in the number of lines.

圖31係顯示一實施形態之基板處理系統SYS3之構成之圖。另外,本實施形態之基板處理系統SYS3與於圖26顯示之基板處理系統SYS2一部分之構成相異,其他構成相同。以下,以與基板處理系統SYS2之相異點為中心說明。以下之說明中,關於與基板處理系統SYS2相同之構成要素給予相同符號並將其說明省略或簡化。Fig. 31 is a view showing the configuration of a substrate processing system SYS3 of an embodiment. Further, the substrate processing system SYS3 of the present embodiment is different from the configuration of a part of the substrate processing system SYS2 shown in FIG. 26, and other configurations are the same. Hereinafter, the difference from the substrate processing system SYS2 will be mainly described. In the following description, the same components as those of the substrate processing system SYS2 are denoted by the same reference numerals, and their description will be omitted or simplified.

如圖31所示,基板處理系統SYS3具有第1基板處理裝置(第1處理裝置)300、第2基板處理裝置(第2處理裝置)310、320及中繼裝置(基板中繼裝置)303。本實施形態之基板處理系統SYS3在不設有基板處理系統SYS2之控制裝置304、305及控制裝置314、315方面及設有主控制裝置CONT方面與基板處理系統SYS2相異。關於其他構成係與基板處理系統SYS2相同。As shown in FIG. 31, the substrate processing system SYS3 includes a first substrate processing apparatus (first processing apparatus) 300, second substrate processing apparatuses (second processing apparatuses) 310 and 320, and a relay apparatus (substrate relay apparatus) 303. The substrate processing system SYS3 of the present embodiment differs from the substrate processing system SYS2 in that the control devices 304 and 305 and the control devices 314 and 315 in which the substrate processing system SYS2 are not provided and the main control device CONT are provided. The other components are the same as the substrate processing system SYS2.

主控制裝置CONT係基於例如記載於上述實施形態之處理資訊(基板處理裝置之節拍時間、產率、搬送速度、捲取速度、送出速度、關於薄片基板FB之資訊等)統籌控制第1基板處理裝置300、第2基板處理裝置310、320、中繼裝置303。例如,基於薄片基板FB之搬送速度或捲取速度、送出速度可判斷使中繼裝置303之中繼對象為第2基板處理裝置310及320之何者。The main control unit CONT controls the first substrate processing based on, for example, the processing information (the tact time, the yield, the transport speed, the take-up speed, the feed speed, and the information on the sheet substrate FB of the substrate processing apparatus) described in the above embodiment. The device 300, the second substrate processing devices 310 and 320, and the relay device 303. For example, based on the transport speed, the take-up speed, and the feed speed of the sheet substrate FB, it can be determined which of the second substrate processing apparatuses 310 and 320 the relay device 303 is to be relayed.

如上述,由於在本實施形態係以主控制裝置CONT統籌控制第1基板處理裝置300、第2基板處理裝置310、320、中繼裝置303,故可有效率地進行對薄片基板FB之一連串之處理。As described above, in the present embodiment, the first substrate processing apparatus 300, the second substrate processing apparatuses 310 and 320, and the relay apparatus 303 are collectively controlled by the main control unit CONT, so that one of the sheet substrates FB can be efficiently connected. deal with.

圖32係顯示製造於可撓性之基板具有像素電極及發光層等之顯示元件(例如有機EL元件)之製造裝置410之構成之概略圖,係圖2之基板處理部102之別例。但對基板處理部102具有之相同構件或裝置係給予相同符號。32 is a schematic view showing a configuration of a manufacturing apparatus 410 for a display element (for example, an organic EL element) having a pixel electrode, a light-emitting layer, and the like, which is manufactured on a flexible substrate, and is another example of the substrate processing unit 102 of FIG. However, the same members or devices as those of the substrate processing unit 102 are given the same reference numerals.

於圖32顯示之製造裝置410在具有2處分隔壁形成部91方面與上述基板處理部102相異。在一方之分隔壁形成步驟係使用壓印滾筒110形成薄膜電晶體之配線用之分隔壁BA,於薄片基板FB之寬度方向即Y軸方向之兩側形成對準標記AM。此外,在另一方之分隔壁形成步驟係使用印刷滾筒440。The manufacturing apparatus 410 shown in FIG. 32 is different from the above-described substrate processing unit 102 in that it has two partition wall forming portions 91. In one of the partition wall forming steps, the partition wall BA for wiring of the thin film transistor is formed by the impression cylinder 110, and the alignment mark AM is formed on both sides in the width direction of the sheet substrate FB, that is, in the Y-axis direction. Further, the printing cylinder 440 is used in the other partition wall forming step.

印刷滾筒440係形成有金屬光罩以使其表面可網版印刷。此外,於印刷滾筒440內部保有紫外線硬化樹脂。紫外線硬化樹脂係以塗刷部441隔著金屬光罩塗布於薄片基板FB。藉此,形成紫外線硬化樹脂之分隔壁BA。此分隔壁BA之高度為10數μm以下。形成於薄片基板FB之紫外線硬化樹脂之分隔壁BA係藉由水銀燈等紫外線燈444而硬化。The printing cylinder 440 is formed with a metal reticle to make its surface screen printable. Further, an ultraviolet curable resin is held inside the printing cylinder 440. The ultraviolet curable resin is applied to the sheet substrate FB via the metal mask by the brushing portion 441. Thereby, the partition wall BA of the ultraviolet curable resin is formed. The height of this partition wall BA is 10 μm or less. The partition wall BA of the ultraviolet curable resin formed on the sheet substrate FB is cured by an ultraviolet lamp 444 such as a mercury lamp.

在於顯示元件形成發光層、電洞輸送層及電子輸送層之場合,必須使分隔壁BA升高。以壓印滾筒110之熱轉印不太能使從薄片基板FB壓出之分隔壁BA升高。因此,除壓印滾筒110外還設有印刷滾筒440。In the case where the display element forms the light-emitting layer, the hole transport layer, and the electron transport layer, the partition wall BA must be raised. The thermal transfer by the impression cylinder 110 is less likely to raise the partition wall BA extruded from the sheet substrate FB. Therefore, a printing cylinder 440 is provided in addition to the impression cylinder 110.

於印刷滾筒440之上游側配置對準攝影機CA6,控制部104掌握印刷滾筒440近處之薄片基板FB之位置。之後,控制部104進行印刷滾筒440之旋轉控制,配合形成於薄片基板FB之薄膜電晶體之位置印刷紫外線硬化樹脂。The alignment camera CA6 is disposed on the upstream side of the printing cylinder 440, and the control unit 104 grasps the position of the sheet substrate FB near the printing cylinder 440. Thereafter, the control unit 104 controls the rotation of the printing cylinder 440 to print the ultraviolet curable resin at the position of the thin film transistor formed on the sheet substrate FB.

所謂紫外線硬化樹脂層係指以因紫外線照射而經架橋反應等而硬化之樹脂為主要成分之層。做為紫外線硬化樹脂,使用包含具有乙烯性不飽和雙鍵之單體之成分較理想,藉由照射紫外線使硬化而形成紫外線硬化樹脂層。做為紫外線硬化樹脂,使用紫外線硬化型胺甲酸乙酯丙烯酸酯系樹脂、紫外線硬化型聚酯丙烯酸酯系樹脂、紫外線硬化型環氧樹脂丙烯酸酯系樹脂、紫外線硬化型多元醇丙烯酸酯系樹脂、紫外線硬化型環氧樹脂較理想。其中以紫外線硬化型丙烯酸酯系樹脂較理想。另外,若為發光層之分隔壁BA用則為黑矩陣較理想,故可於紫外線硬化型丙烯酸酯系樹脂導入鉻等金屬或氧化物。The ultraviolet curable resin layer refers to a layer containing a resin which is cured by a bridging reaction or the like by ultraviolet irradiation as a main component. As the ultraviolet curable resin, a component containing a monomer having an ethylenically unsaturated double bond is preferably used, and the ultraviolet curable resin layer is formed by curing by irradiation with ultraviolet rays. As the ultraviolet curable resin, an ultraviolet curable urethane acrylate resin, an ultraviolet curable polyester acrylate resin, an ultraviolet curable epoxy acrylate resin, an ultraviolet curable polyol acrylate resin, or the like, Ultraviolet curing epoxy resin is preferred. Among them, an ultraviolet curable acrylate resin is preferred. In addition, it is preferable that the partition wall BA of the light-emitting layer is a black matrix, so that a metal or an oxide such as chromium can be introduced into the ultraviolet curable acrylate resin.

紫外線硬化樹脂之分隔壁BA可於以壓印滾筒110形成於薄片基板FB之分隔壁BA上重疊形成,亦可於沒有以壓印滾筒110形成分隔壁BA之區域形成。其後之發光層形成步驟為與已使用圖3等說明之步驟相同之構成即足。The partition wall BA of the ultraviolet curable resin may be formed to be overlapped on the partition wall BA formed on the sheet substrate FB by the impression cylinder 110, or may be formed in a region where the partition wall BA is not formed by the impression cylinder 110. The subsequent step of forming the light-emitting layer is the same as the step described above using FIG. 3 and the like.

其次,針對一實施形態之液晶顯示元件之製造裝置及製造方法說明。液晶顯示元件一般係由偏向濾光器、具有薄膜電晶體之薄片基板FB、液晶層、彩色濾光器、偏向濾光器構成。其中,已說明具有薄膜電晶體之薄片基板FB係可以描繪於圖3之上段之基板處理部102或描繪於圖32之上段之製造裝置410製造。Next, a description will be given of a manufacturing apparatus and a manufacturing method of a liquid crystal display element according to an embodiment. The liquid crystal display element is generally composed of a deflecting filter, a thin film substrate FB having a thin film transistor, a liquid crystal layer, a color filter, and a deflecting filter. Here, it has been described that the sheet substrate FB having the thin film transistor can be fabricated by the substrate processing unit 102 in the upper stage of FIG. 3 or the manufacturing apparatus 410 depicted in the upper stage of FIG.

在本實施形態係針對液晶之供給及彩色濾光器CF之貼合說明。於液晶顯示元件有供給液晶之必要,且有形成液晶之密封壁之必要。因此,描繪於圖32之下段之印刷滾筒440在本實施形態係使用於液晶之密封壁而非發光層用之分隔壁BA。In the present embodiment, the description of the bonding of the liquid crystal and the color filter CF will be described. It is necessary for the liquid crystal display element to supply liquid crystal, and it is necessary to form a sealing wall of liquid crystal. Therefore, the printing cylinder 440 depicted in the lower stage of Fig. 32 is used in the present embodiment for the sealing wall of the liquid crystal instead of the partition wall BA for the light-emitting layer.

圖33係顯示進行液晶之供給及彩色濾光器之貼合之供給貼合裝置420者。Fig. 33 is a view showing a supply bonding device 420 which performs supply of liquid crystal and bonding of color filters.

供給貼合裝置420係設有上游側低真空室82與下游側低真空室83,於上游側低真空室82與下游側低真空室83之間設有高真空室84。此等低真空室82、低真空室83及高真空室84係以旋轉泵或渦輪分子泵89抽真空。The supply bonding device 420 is provided with an upstream side low vacuum chamber 82 and a downstream side low vacuum chamber 83, and a high vacuum chamber 84 is provided between the upstream side low vacuum chamber 82 and the downstream side low vacuum chamber 83. The low vacuum chamber 82, the low vacuum chamber 83, and the high vacuum chamber 84 are evacuated by a rotary pump or a turbo molecular pump 89.

對上游側低真空室82係供給彩色濾光器CF,此外,經過以圖32顯示之印刷滾筒440供給形成有液晶之密封壁之薄片基板FB。另外,於彩色濾光器CF之Y軸方向之兩側亦形成有對準標記。The color filter CF is supplied to the upstream side low vacuum chamber 82, and the sheet substrate FB on which the liquid crystal sealing wall is formed is supplied through the printing cylinder 440 shown in FIG. Further, alignment marks are formed on both sides of the color filter CF in the Y-axis direction.

形成有液晶之密封壁之薄片基板FB係先從接著劑分配器72塗布為了與彩色濾光器CF接著之熱硬化性接著劑。之後,薄片基板FB經過上游側低真空室82送往高真空室84。在高真空室84係從液晶分配器74塗布液晶。之後,彩色濾光器CF與薄片基板FB以熱轉印滾筒76接著。The sheet substrate FB on which the liquid crystal sealing wall is formed is first coated with a thermosetting adhesive which is applied to the color filter CF from the adhesive distributor 72. Thereafter, the sheet substrate FB is sent to the high vacuum chamber 84 through the upstream side low vacuum chamber 82. The liquid crystal is applied from the liquid crystal distributor 74 in the high vacuum chamber 84. Thereafter, the color filter CF and the sheet substrate FB are followed by the thermal transfer roller 76.

薄片基板FB之對準標記AM係以對準攝影機CA11攝影,彩色濾光器CF之對準標記AM係以對準攝影機CA12攝影。以對準攝影機CA11及CA12攝影之結果係送至控制部104,以掌握X軸方向之偏移、Y軸方向之偏移及θ旋轉。熱轉印滾筒76對應於從控制部104送來之位置信號改變旋轉速度,一邊進行彩色濾光器CF與薄片基板FB之對齊一邊接著。The alignment mark AM of the sheet substrate FB is photographed by the alignment camera CA11, and the alignment mark AM of the color filter CF is photographed by the alignment camera CA12. The results of the shooting by the alignment cameras CA11 and CA12 are sent to the control unit 104 to grasp the shift in the X-axis direction, the shift in the Y-axis direction, and the θ rotation. The thermal transfer roller 76 follows the alignment signal sent from the control unit 104 to change the rotational speed, and then aligns the color filter CF and the sheet substrate FB.

已接著之液晶顯示元件薄片基板CFB經過下游側低真空室83送至外部。另外,雖以接著劑為熱硬化性接著劑說明,但使用紫外線硬化性之接著劑亦可。在此場合係使用紫外線燈等而非熱轉印滾筒76。The succeeding liquid crystal display element sheet substrate CFB is sent to the outside through the downstream side low vacuum chamber 83. Further, although the adhesive is a thermosetting adhesive, an ultraviolet curable adhesive may be used. In this case, an ultraviolet lamp or the like is used instead of the thermal transfer roller 76.

圖34係說明了為了印刷滾筒440之Y軸方向之對準之機構之圖。於印刷滾筒440之表面形成有金屬光罩。藉由來自控制部104之信號,X軸方向之對齊可以印刷滾筒440之速度調整。X軸方向之對齊有以下顯示之方法。Figure 34 is a view for explaining the mechanism for the alignment of the printing drum 440 in the Y-axis direction. A metal mask is formed on the surface of the printing cylinder 440. The alignment of the X-axis direction by the signal from the control unit 104 can adjust the speed of the printing cylinder 440. The alignment of the X-axis direction has the following method.

圖34(a)係以空壓或油壓控制方式而滾筒中央膨脹或收縮之印刷滾筒440p。藉由以來自速度&對準控制部90之信號供給空氣或油,可改變滾筒中央部與周邊部之Y軸方向之位置。Fig. 34 (a) shows a printing cylinder 440p in which the center of the drum is expanded or contracted by air pressure or oil pressure control. By supplying air or oil with a signal from the speed & alignment control unit 90, the position of the center portion of the drum and the peripheral portion in the Y-axis direction can be changed.

圖34(b)係以熱變形控制方式而滾筒全體擴大或縮小之印刷滾筒440q。藉由以來自速度&對準控制部90之信號加熱或冷卻,可改變滾筒全體之Y軸方向之位置及X軸方向之位置。Fig. 34 (b) shows a printing cylinder 440q in which the entire drum is enlarged or contracted by a thermal deformation control method. By heating or cooling the signal from the speed & alignment control unit 90, the position of the entire Y-axis direction of the drum and the position of the X-axis direction can be changed.

圖34(c)係以彎曲變形控制方式而滾筒全體彎曲之印刷滾筒440r。印刷滾筒440r較佳為於圓周方向形成有狹縫而可以較小之力彎曲。Fig. 34 (c) shows a printing cylinder 440r in which the entire drum is bent by a bending deformation control method. The printing cylinder 440r is preferably formed with a slit in the circumferential direction and can be bent with a small force.

本發明之技術範圍並不限於上述實施形態,可在不脫離本發明之主旨之範圍施加適當變更。The technical scope of the present invention is not limited to the above-described embodiments, and may be appropriately modified without departing from the spirit and scope of the invention.

上述實施形態中,於基板匣1之閉塞部4之構成雖說明蓋構件41覆蓋開口部34及第2開口部35雙方,但並不限於此。例如圖33所示蓋構件41A開閉開口部34、蓋構件41B開閉第2開口部35亦可。In the above-described embodiment, the configuration of the closing portion 4 of the substrate 1 indicates that the lid member 41 covers both the opening portion 34 and the second opening portion 35, but the invention is not limited thereto. For example, the lid member 41A shown in FIG. 33 may open and close the opening portion 34, and the lid member 41B may open and close the second opening portion 35.

在使用此構成之場合,例如圖35所示,設置控制蓋構件41A及蓋構件41B之開閉以使座部3插入基板處理部102之供給側連接部102A時蓋構件41A及蓋構件41B開啟且座部3與供給側連接部102A之間沒有連接時蓋構件41A及蓋構件41B關閉之驅動裝置。When the configuration is used, for example, as shown in FIG. 35, when the control cover member 41A and the cover member 41B are opened and closed so that the seat portion 3 is inserted into the supply-side connecting portion 102A of the substrate processing portion 102, the cover member 41A and the cover member 41B are opened and seated. The driving device in which the lid member 41A and the lid member 41B are closed when there is no connection between the portion 3 and the supply-side connecting portion 102A.

藉由如上述開口部34及第2開口部35獨立開閉,可防止不使用之開口部開啟。藉此,可防止來自開口部之塵埃等異物之侵入。By opening and closing the opening portion 34 and the second opening portion 35 as described above, it is possible to prevent the unused opening portion from being opened. Thereby, it is possible to prevent entry of foreign matter such as dust from the opening.

此外,在於上述之基板處理裝置或基板處理系統之一部分有問題產生之場合,切斷薄片基板FB以將該問題之產生位置除去亦無妨。藉此,可防止薄片基板FB之產率之降低。此外,本實施形態中之基板匣或基板處理系統不論在因缺陷等而將薄片基板FB切斷之場合或停電等導致之線停止時之場合,由於知道薄片基板FB之剩餘長度,故立即可進行再作動後之處理。因此,利用本實施形態,亦可達成處理效率之上升或安全性之上升。Further, in the case where a problem occurs in one of the substrate processing apparatus or the substrate processing system described above, the sheet substrate FB may be cut to remove the occurrence position of the problem. Thereby, the decrease in the yield of the sheet substrate FB can be prevented. Further, in the case of the substrate cassette or the substrate processing system according to the present embodiment, when the sheet substrate FB is cut due to a defect or the like, or when the line is stopped due to power failure or the like, since the remaining length of the sheet substrate FB is known, it is immediately available. After the re-action is processed. Therefore, according to the present embodiment, an increase in processing efficiency or an increase in safety can be achieved.

此外,在上述各實施形態雖係舉於圖1顯示之場效型電晶體為例說明,但並不限於此。圖36(a)及圖36(b)係顯示與上述實施形態相異之場效型電晶體之剖面圖。除於圖1顯示之場效型電晶體外,製造底閘極型做為例如於圖36(a)顯示之場效型電晶體亦可。係於薄片基板FB上形成閘極電極G及閘極絕緣層I、有機半導體層OS後,形成源極電極S、汲極電極D者。Further, in the above embodiments, the field effect type transistor shown in FIG. 1 is described as an example, but the invention is not limited thereto. 36(a) and 36(b) are cross-sectional views showing a field effect type transistor which is different from the above embodiment. In addition to the field effect type transistor shown in Fig. 1, the bottom gate type is manufactured as, for example, the field effect type transistor shown in Fig. 36 (a). After the gate electrode G, the gate insulating layer I, and the organic semiconductor layer OS are formed on the thin substrate FB, the source electrode S and the drain electrode D are formed.

圖36(b)係頂閘極型場效型電晶體,係於薄片基板FB上形成源極電極S及汲極電極D後,形成有機半導體層OS,再於其上形成閘極絕緣層I、閘極電極G者。36(b) is a top gate type field effect type transistor, after the source electrode S and the drain electrode D are formed on the sheet substrate FB, an organic semiconductor layer OS is formed, and a gate insulating layer I is formed thereon. , the gate electrode G.

不論為此等場效型電晶體之任一者,皆可使用改變金屬墨等之順序之基板處理部102來對應。Regardless of any of the field effect transistors, the substrate processing unit 102 that changes the order of the metal ink or the like can be used.

此外,在上述實施形態雖係開口部34及第2開口部35設於座部3之+X側端部,但並不限定於此,設於例如與座部3為相異之位置亦無妨。此外,不設第2開口部35亦無妨。Further, in the above-described embodiment, the opening portion 34 and the second opening portion 35 are provided on the +X side end portion of the seat portion 3, but the present invention is not limited thereto, and may be provided at a position different from the seat portion 3, for example. . Further, the second opening portion 35 may not be provided.

此外,在上述實施形態雖係具備基板驅動機構24之構成並將薄片基板FB捲取收容來做為基板匣1,但並不限定於此,以其他方法收容亦無妨。Further, in the above-described embodiment, the configuration of the substrate driving mechanism 24 is included, and the sheet substrate FB is wound up and stored as the substrate 匣1. However, the present invention is not limited thereto, and may be accommodated by other methods.

此外,在上述實施形態雖係在基板驅動機構24之滾筒部26之表面設接著部26c之構成,但並不限定於此,只要是可保持薄片基板FB之構成,使用其他機構亦無妨。此外,接著部26c不必設於滾筒部26之表面全體,設於滾筒部26之表面之一部分亦無妨。Further, in the above-described embodiment, the configuration of the attachment portion 26c is provided on the surface of the roller portion 26 of the substrate drive mechanism 24. However, the configuration is not limited thereto, and any other mechanism may be used as long as the configuration of the sheet substrate FB can be maintained. Further, the rear portion 26c does not have to be provided on the entire surface of the drum portion 26, and may be provided on one of the surfaces of the drum portion 26.

此外,關於配置於收容部20之內部之搬送部21或導引部27並不限於已於上述實施形態例示之形態,為其他配置亦無妨。Further, the transport unit 21 or the guide unit 27 disposed inside the accommodating portion 20 is not limited to the one exemplified in the above embodiment, and may be other arrangements.

此外,於上述實施形態雖係舉基板匣1之連接對象即外部連接部針對各基板處理部僅設有1台為例說明,但並不限定於此,例如於Z方向具有複數外部連接部亦無妨。藉此構成,例如可將基板匣1在於Z方向使反轉之狀態下安裝。In the above-described embodiment, the external connection portion, which is the connection target of the substrate 匣1, is described as an example in which only one substrate processing unit is provided. However, the present invention is not limited thereto. For example, the external connection portion has a plurality of external connection portions in the Z direction. No problem. According to this configuration, for example, the substrate 匣1 can be mounted in a state where the Z direction is reversed.

此外,於上述實施形態中,該外部連接部設為可於Z方向移動亦無妨。在此場合,在例如將基板匣1在於Z方向使反轉之狀態下安裝時使外部連接部於Z方向移動即可。Further, in the above embodiment, the external connection portion may be moved in the Z direction. In this case, for example, when the substrate 匣1 is mounted in a state in which the Z direction is reversed, the external connection portion may be moved in the Z direction.

(基板匣之其他形態)(other forms of the substrate)

圖37係顯示其他實施形態之基板匣2001之構成之立體圖。圖38係顯示沿圖37之A-A’剖面之構成之圖。以下之說明中,關於與上述實施形態相同或同等之構成要素給予相同符號並將其說明省略或簡化。如圖37及圖38所示,基板匣2001具有匣本體2、座部3。Fig. 37 is a perspective view showing the configuration of a substrate stack 2001 of another embodiment. Fig. 38 is a view showing the configuration of the cross section taken along the line A-A' of Fig. 37. In the following description, the same or equivalent components as those in the above-described embodiments are denoted by the same reference numerals, and their description is omitted or simplified. As shown in FIGS. 37 and 38, the substrate stack 2001 has a crucible body 2 and a seat portion 3.

本實施形態中,使用基板匣2001做為基板供給部101及基板回收部103。以下說明中,為了說明方便,係設定與圖2共通之XYZ正交座標系統,並參照此XYZ正交座標系統說明各構件之位置關係。以下之XYZ正交座標系統係舉在基板供給部101連接於基板處理部102之狀態下將基板匣2001做為該基板供給部101使用之場合為例說明。In the present embodiment, the substrate 匣2001 is used as the substrate supply unit 101 and the substrate collection unit 103. In the following description, for convenience of explanation, an XYZ orthogonal coordinate system common to FIG. 2 is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The following XYZ orthogonal coordinate system will be described as an example in which the substrate stack 2001 is used as the substrate supply unit 101 in a state where the substrate supply unit 101 is connected to the substrate processing unit 102.

作為薄片基板FB,可使用例如耐熱性之樹脂膜、不鏽鋼等。具體而言,可使用聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯-乙烯醇共聚物樹脂、聚氯乙烯樹脂、纖維素樹脂、聚醯胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、乙酸乙烯樹脂等材料。薄片基板FB之Y方向之尺寸形成為例如50cm~2m左右,X方向之尺寸形成為例如10m以上。當然,此尺寸不過為一例,並非限定於此。例如薄片基板FB之Y方向之尺寸亦可為50cm以下,亦可為2m以上。又,薄片基板FB之X方向之尺寸亦可為10m以下。又,本實施形態之可撓性,係指即使例如對基板施加至少自重程度之既定之力亦不會產生剪斷或破壞,能彎曲該基板之性質。上述可撓性會隨該基板之材質、大小、厚度、或溫度等環境等而變化。As the sheet substrate FB, for example, a heat resistant resin film, stainless steel or the like can be used. Specifically, a polyethylene resin, a polypropylene resin, a polyester resin, an ethylene-vinyl alcohol copolymer resin, a polyvinyl chloride resin, a cellulose resin, a polyamide resin, a polycarbonate resin, a polystyrene resin, or the like can be used. Materials such as vinyl acetate resin. The dimension of the sheet substrate FB in the Y direction is, for example, about 50 cm to 2 m, and the dimension in the X direction is, for example, 10 m or more. Of course, this size is merely an example and is not limited thereto. For example, the dimension of the sheet substrate FB in the Y direction may be 50 cm or less, or may be 2 m or more. Further, the dimension of the sheet substrate FB in the X direction may be 10 m or less. Further, the flexibility of the present embodiment means that the substrate can be bent without causing shear or breakage even if a predetermined force is applied to the substrate at least to its own weight. The flexibility described above varies depending on the material, size, thickness, temperature, and the like of the substrate.

基板驅動機構24係進行捲取薄片基板FB之動作及送出薄片基板FB之動作之部分。基板驅動機構24設於收容部20之內部。基板驅動機構24具有滾筒部(軸部)26及導引部27。滾筒部26如圖38所示,具有旋轉軸構件26a、擴徑部26b及接著部26c。The substrate drive mechanism 24 is a part that performs an operation of winding up the sheet substrate FB and an operation of feeding out the sheet substrate FB. The substrate driving mechanism 24 is provided inside the housing portion 20. The substrate drive mechanism 24 has a drum portion (shaft portion) 26 and a guide portion 27. As shown in FIG. 38, the roller portion 26 has a rotating shaft member 26a, an enlarged diameter portion 26b, and a rear portion 26c.

旋轉軸構件26a係連接於不圖示之旋轉驅動機構。藉由旋轉驅動機構之控制,旋轉軸構件26a以中心軸為中心旋轉。旋轉驅動機構係如圖38所示,可使旋轉軸構件26a往例如+θY方向及-θY方向之任一方向旋轉。The rotating shaft member 26a is connected to a rotation driving mechanism (not shown). The rotary shaft member 26a is rotated about the central axis by the control of the rotary drive mechanism. As shown in FIG. 38, the rotation drive mechanism can rotate the rotation shaft member 26a in any of the +θY direction and the -θY direction, for example.

於突出部23之+X側端部設有氣體供給埠(切換機構)2004。氣體供給埠2004係設有連接於外部之氣體供給源之供給口2041。氣體供給埠2004係設於例如Y方向之中央部。在圖37雖係氣體供給埠2004僅設有1個之構成,但設有複數個亦無妨。A gas supply port (switching mechanism) 2004 is provided at the +X side end of the protruding portion 23. The gas supply port 2004 is provided with a supply port 2041 that is connected to an external gas supply source. The gas supply port 2004 is provided, for example, at the center of the Y direction. Although only one of the gas supply ports 2004 is provided in Fig. 37, a plurality of them may be provided.

於匣本體2設有資訊處理部IC(參照圖37)。資訊處理部IC係由IC晶片等構成,埋於例如匣本體2。於資訊處理部IC設有儲存基板處理裝置100及基板匣2001之處理資訊之儲存部MR或例如在與控制部104之間收發處理資訊之通信部CR等。The UI unit 2 is provided with an information processing unit IC (see FIG. 37). The information processing unit IC is composed of an IC chip or the like and is buried in, for example, the body 2 . The information processing unit IC is provided with a storage unit MR that stores processing information of the substrate processing apparatus 100 and the substrate 匣 2001, or a communication unit CR that transmits and receives processing information to and from the control unit 104, for example.

圖39及圖40係擴大顯示突出部23之+X側端部之構成之圖,係顯示連接於氣體供給埠2004之流路機構之圖。FIG. 39 and FIG. 40 are views showing a configuration in which the +X side end portion of the protruding portion 23 is enlarged, and shows a flow path mechanism connected to the gas supply port 2004.

如圖39及圖40所示,氣體供給埠2004之供給口2041係連接於形成於突出部23之內部之流路2042。該流路2042係分歧為第1流路2042a及第2流路2042b。基板用導引構件22a係於內部形成有流路2043a,第1流路2042a係經由連接部42c連接於該流路2043a。於基板用導引構件22a之-Z側之面形成有複數氣體噴出口2044a,流路2043a係分別連接於此等氣體噴出口2044a。如上述,基板用導引構件22a係形成為從-Z側之面噴出氣體之氣墊狀。As shown in FIGS. 39 and 40, the supply port 2041 of the gas supply port 2004 is connected to the flow path 2042 formed inside the protruding portion 23. The flow path 2042 is divided into a first flow path 2042a and a second flow path 2042b. The substrate guide member 22a has a flow path 2043a formed therein, and the first flow path 2042a is connected to the flow path 2043a via the connection portion 42c. A plurality of gas ejection ports 2044a are formed on the surface on the -Z side of the substrate guiding member 22a, and the flow path 2043a is connected to the gas ejection ports 2044a. As described above, the substrate guiding member 22a is formed in a cushion shape in which gas is ejected from the surface on the -Z side.

另一方面,如圖39及圖40所示,於基板用導引構件22b之內部亦形成有流路2043b。第2流路2042b係經由連接部42d連接於該流路2043b。於基板用導引構件22b之+Z側之面形成有複數氣體噴出口2044b,流路2043b係分別連接於此等氣體噴出口2044b。如上述,基板用導引構件22b係形成為從+Z側之面噴出氣體之氣墊狀。On the other hand, as shown in FIGS. 39 and 40, a flow path 2043b is formed inside the substrate guiding member 22b. The second flow path 2042b is connected to the flow path 2043b via the connection portion 42d. A plurality of gas discharge ports 2044b are formed on the +Z side of the substrate guide member 22b, and the flow path 2043b is connected to the gas discharge ports 2044b. As described above, the substrate guiding member 22b is formed in a cushion shape in which gas is ejected from the surface on the +Z side.

於基板用導引構件22b之-Z側之面連接有密封構件2047之一端部。密封構件2047之另一端部係連接於例如座部3之-Z側之面。藉由密封構件2047,基板用導引構件22b與開口部34之間為密封狀態。基板用導引構件22b之-Z側之面係以按壓機構2045按壓。按壓機構2045之-Z側之端部係固定於例如支承於突出部23之內面之支承部2046。One end of the sealing member 2047 is connected to the surface on the -Z side of the substrate guiding member 22b. The other end portion of the sealing member 2047 is connected to, for example, the surface on the -Z side of the seat portion 3. The sealing member 2047 is in a sealed state between the substrate guiding member 22b and the opening portion 34. The surface on the -Z side of the substrate guide member 22b is pressed by the pressing mechanism 2045. The end portion of the pressing mechanism 2045 on the -Z side is fixed to, for example, a support portion 2046 supported on the inner surface of the protruding portion 23.

如圖39所示,於氣體供給源沒有連接於氣體供給埠2004之供給口2041之狀態,於流路機構沒有氣體流動,從基板用導引構件22a及基板用導引構件22b不會噴射氣體,故基板用導引構件22b係被按壓機構2045往+Z側按壓,在與基板用導引構件22a之間共同夾入薄片基板FB。As shown in FIG. 39, in a state where the gas supply source is not connected to the supply port 2041 of the gas supply port 2004, no gas flows through the channel mechanism, and the gas is not ejected from the substrate guide member 22a and the substrate guide member 22b. Therefore, the substrate guiding member 22b is pressed by the pressing mechanism 2045 toward the +Z side, and the sheet substrate FB is sandwiched between the substrate guiding member 22a and the substrate guiding member 22a.

相對於此,如圖40所示,藉由將例如外部之氣體供給部GS插入供給口2041供給氣體,關於基板用導引構件22a側該氣體經過流路2042、第1流路2042a、連接部42c及流路2043a從氣體噴出口2044a往-Z方向噴射。此外,關於基板用導引構件22b側該氣體從流路2042經過第2流路2042b、連接部42d及流路2043b從氣體噴出口2044b往+Z方向噴射。On the other hand, as shown in FIG. 40, for example, the external gas supply unit GS is inserted into the supply port 2041 to supply the gas, and the gas passage passage 2042, the first flow path 2042a, and the connection portion are provided on the substrate guide member 22a side. 42c and the flow path 2043a are ejected from the gas ejection port 2044a in the -Z direction. Further, the gas is ejected from the flow path 2042 through the second flow path 2042b, the connection portion 42d, and the flow path 2043b from the gas discharge port 2044b in the +Z direction on the substrate guide member 22b side.

藉由從隔著薄片基板FB之兩側噴射氣體,於薄片基板FB與氣體噴出口2044a之間、薄片基板FB與氣體噴出口2044b之間分別形成氣體層(空氣軸承)。於薄片基板FB之+Z側之面及-Z側之面形成氣體層使基板用導引構件22a往+Z側移動且基板用導引構件22b往-Z側移動,可從以基板用導引構件22a與基板用導引構件22b夾持之狀態使薄片基板FB解放。A gas layer (air bearing) is formed between the sheet substrate FB and the gas ejection port 2044a and between the sheet substrate FB and the gas ejection port 2044b by ejecting gas from both sides of the sheet substrate FB. A gas layer is formed on the surface on the +Z side and the -Z side of the sheet substrate FB, and the substrate guiding member 22a is moved to the +Z side, and the substrate guiding member 22b is moved to the -Z side, and the substrate can be guided. The state in which the lead member 22a is sandwiched by the substrate guiding member 22b releases the sheet substrate FB.

此外,例如藉由使從基板用導引構件22a與基板用導引構件22b噴射之氣體為通過游離劑之氣體可防止薄片基板FB之帶電或除電。Further, for example, the gas ejected from the substrate guiding member 22a and the substrate guiding member 22b is a gas that passes through the free agent, so that charging or erasing of the sheet substrate FB can be prevented.

(薄片基板往基板匣之收容動作)(Storage operation of the sheet substrate to the substrate)

其次,說明於如上述構成之基板匣2001收容薄片基板FB之收容動作。圖41及圖42,係顯示收容動作時之基板匣2001之狀態之圖。圖41及圖42中,為了容易判別圖,係以虛線顯示基板匣2001之外形。Next, the storage operation of the sheet substrate FB in the substrate cassette 2001 configured as described above will be described. 41 and 42 are views showing the state of the substrate stack 2001 during the housing operation. In Fig. 41 and Fig. 42, in order to make it easy to discriminate the figure, the outer shape of the substrate 匣2001 is shown by a broken line.

如圖41及圖42所示,於基板匣2001收容薄片基板FB時,係使成為將基板匣2001保持於保持具HD之狀態。之後,例如從氣體供給埠2004之供給口2041供給氣體,從基板用導引構件22a與基板用導引構件22b使氣體噴射。藉由氣體之噴射,基板用導引構件22a與基板用導引構件22b從以按壓機構2045關閉之狀態承受互相之噴射所產生之作用,基板用導引構件22a與基板用導引構件22b之間變寬。在此狀態下,將薄片基板FB從開口部34插入。插入薄片基板FB時,係先設為使張力滾筒21a及旋轉軸構件26a(滾筒部26)旋轉之狀態。As shown in FIG. 41 and FIG. 42, when the substrate FB is accommodated in the substrate 匣 2001, the substrate 匣 2001 is held in the holder HD. After that, for example, gas is supplied from the supply port 2041 of the gas supply port 2004, and the gas is ejected from the substrate guiding member 22a and the substrate guiding member 22b. By the ejection of the gas, the substrate guiding member 22a and the substrate guiding member 22b are subjected to the action of the mutual ejection from the state in which the pressing mechanism 2045 is closed, and the substrate guiding member 22a and the substrate guiding member 22b are used. The width becomes wider. In this state, the sheet substrate FB is inserted from the opening portion 34. When the sheet substrate FB is inserted, the tension roller 21a and the rotating shaft member 26a (roller portion 26) are first rotated.

經由開口部34插入之薄片基板FB,從+Z側及-Z側兩側接受氣體之噴射,於各自之面形成氣體層。薄片基板FB以在此氣體層間滑動之方式在基板用導引構件22a與基板用導引構件22b之間移動。搬送部21中,薄片基板FB係被夾於張力滾筒21a與測定滾筒21b之間而往收容部20側搬送。伴隨測定滾筒21b之旋轉,於例如檢測部21c檢測薄片基板FB之搬送長度。The sheet substrate FB inserted through the opening 34 receives gas injection from both sides of the +Z side and the -Z side, and forms a gas layer on each surface. The sheet substrate FB moves between the substrate guiding member 22a and the substrate guiding member 22b so as to slide between the gas layers. In the transport unit 21, the sheet substrate FB is sandwiched between the tension roller 21a and the measurement drum 21b, and is transported to the accommodating portion 20 side. The detection unit 21c detects the transport length of the sheet substrate FB with the rotation of the measurement drum 21b.

往收容部20側通過搬送部21之薄片基板FB,如圖41所示,一邊因自重而往-Z方向彎曲一邊被導引。本實施形態中,由於於薄片基板FB之-Z側設有導引部27,因此薄片基板FB係沿導引部27之旋動構件27a及前端構件27b被往滾筒部26導引。As shown in FIG. 41, the sheet substrate FB passing through the conveying unit 21 on the side of the accommodating portion 20 is guided while being bent in the -Z direction by its own weight. In the present embodiment, since the guide portion 27 is provided on the -Z side of the sheet substrate FB, the sheet substrate FB is guided to the drum portion 26 along the swivel member 27a and the tip end member 27b of the guide portion 27.

在薄片基板FB之前端到達滾筒部26之接著部26c後,該薄片基板FB之前端與接著部26c接著。在此狀態下若滾筒部26旋轉,薄片基板FB便徐徐地接著於接著部26c,薄片基板FB被接著部26c捲取。在薄片基板FB接著於接著部26c後,一邊調整例如張力滾筒21a之旋轉速度與旋轉軸構件26a之旋轉速度一邊搬送薄片基板FB,以使薄片基板FB在滾筒部26與搬送部21之間不會彎曲。After the front end of the sheet substrate FB reaches the succeeding portion 26c of the drum portion 26, the front end of the sheet substrate FB is followed by the succeeding portion 26c. When the roller portion 26 rotates in this state, the sheet substrate FB is gradually followed by the succeeding portion 26c, and the sheet substrate FB is taken up by the succeeding portion 26c. After the sheet substrate FB is followed by the succeeding portion 26c, the sheet substrate FB is conveyed while the rotation speed of the tension roller 21a and the rotation speed of the rotating shaft member 26a are adjusted, so that the sheet substrate FB is not between the drum portion 26 and the conveying portion 21. Will bend.

薄片基板FB在對滾筒部26被捲取例如一旋轉之量後,如圖42所示使導引部27退離。藉由在此狀態下使滾筒部26旋轉,薄片基板FB即徐徐地被滾筒部26陸續捲取。被捲取之薄片基板FB之厚度雖逐漸變厚,但由於導引部27已退離,因此薄片基板FB與導引部27不會接觸。After the sheet substrate FB is wound up, for example, by a rotation amount, the guide portion 27 is retracted as shown in FIG. By rotating the drum portion 26 in this state, the sheet substrate FB is gradually taken up by the drum portion 26. Although the thickness of the wound sheet substrate FB is gradually increased, since the guide portion 27 has been retracted, the sheet substrate FB does not come into contact with the guide portion 27.

在已捲取所欲長度之薄片基板FB後,切斷例如薄片基板FB中開口部34外側之部分,使對供給口2041之氣體之供給停止,使基板用導引構件22a與基板用導引構件22b之間為夾持基板關閉之狀態。如此,於基板匣2001收容薄片基板FB。在薄片基板FB之收容動作中,基於於檢測部21c測定之薄片基板FB之測定長度來算出例如已收容於基板匣1內之薄片基板FB之全長亦無妨。又,可使顯示部29顯示算出結果,亦可使儲存部MR儲存或使用通信部CR使通信。After the sheet substrate FB of the desired length has been taken up, for example, the portion outside the opening 34 of the sheet substrate FB is cut, and the supply of the gas to the supply port 2041 is stopped, and the substrate guiding member 22a and the substrate are guided. The member 22b is in a state in which the holding substrate is closed. In this manner, the sheet substrate FB is housed in the substrate 匣2001. In the storage operation of the sheet substrate FB, the entire length of the sheet substrate FB accommodated in the substrate 1 may be calculated based on the measurement length of the sheet substrate FB measured by the detecting unit 21c. Further, the display unit 29 can display the calculation result, and the storage unit MR can store or use the communication unit CR to perform communication.

此外,例如一邊由作業者從窗部28觀察收容部20之內部一邊進行薄片基板FB之捲取亦無妨。在此場合,可一邊確認薄片基板FB是否在折彎之狀態下被捲取、薄片基板FB之捲取形狀(捲軸形狀)是否為變形之狀態一邊使捲取作業進行,在有異常發生之場合可立刻使捲取停止。Further, for example, the operator may perform the winding of the sheet substrate FB while observing the inside of the accommodating portion 20 from the window portion 28. In this case, it is possible to perform the winding operation while checking whether or not the sheet substrate FB is wound in a state of being bent and the winding shape (reel shape) of the sheet substrate FB is deformed, and in the case where an abnormality occurs. The winding can be stopped immediately.

(基板處理裝置之動作)(Operation of substrate processing apparatus)

其次,說明如上述構成之基板處理裝置100之動作。Next, the operation of the substrate processing apparatus 100 configured as described above will be described.

本實施形態中,係依序進行以收容有薄片基板FB之基板匣2001作為基板供給部101連接於供給側連接部102A之連接動作、由基板供給部101進行之基板匣2001之薄片基板FB之供給動作、基板處理部102之元件形成動作、基板匣2001之卸除動作。In the present embodiment, the substrate 匣 2001 in which the sheet substrate FB is housed is connected as the connection operation of the substrate supply unit 101 to the supply side connection unit 102A, and the substrate FB of the substrate 匣 2001 is performed by the substrate supply unit 101. The supply operation, the element forming operation of the substrate processing unit 102, and the removal operation of the substrate cassette 2001.

首先,說明基板匣2001之連接動作。圖43係顯示基板匣2001之連接動作之圖。First, the connection operation of the substrate stack 2001 will be described. Fig. 43 is a view showing the connection operation of the substrate cassette 2001.

如圖43所示,關於供給側連接部102A,先將插入口形成為與座部3對應之形狀,再於插入氣體供給埠2004之供給口2041之位置形成氣體供給部GS。As shown in FIG. 43, the supply-side connecting portion 102A is formed such that the insertion port has a shape corresponding to the seat portion 3, and the gas supply portion GS is formed at a position where the supply port 2041 of the gas supply port 2004 is inserted.

連接動作中,在使基板匣2001保持於保持具(與例如圖41所示之保持具HD相同之構成)之狀態下,進行座部3與供給側連接部102A之對齊。在對齊後,使座部3往+X側移動而插入基板處理部102。此時,氣體供給部GS插入氣體供給埠2004之供給口2041。因此,座部3連接於基板處理部102時基板用導引構件22a與基板用導引構件22b之間為開狀態。In the connection operation, the substrate 3 is held in the holder (the same configuration as the holder HD shown in FIG. 41, for example), and the seat portion 3 and the supply-side connecting portion 102A are aligned. After the alignment, the seat portion 3 is moved to the +X side to be inserted into the substrate processing portion 102. At this time, the gas supply unit GS is inserted into the supply port 2041 of the gas supply port 2004. Therefore, when the seat portion 3 is connected to the substrate processing portion 102, the substrate guiding member 22a and the substrate guiding member 22b are opened.

其次,說明供給動作。對基板處理部102供給薄片基板FB時,例如係使基板匣2001之旋轉軸構件26a(滾筒部26)及張力滾筒21a往與收容動作時相反之方向旋轉,而如圖44所示,經由開口部34送出薄片基板FB。Next, the supply operation will be described. When the sheet substrate FB is supplied to the substrate processing unit 102, for example, the rotating shaft member 26a (roller portion 26) of the substrate 匣2001 and the tension roller 21a are rotated in the opposite direction to the housing operation, and as shown in FIG. The portion 34 sends out the sheet substrate FB.

其次,說明元件形成動作。元件形成動作中,如圖2所示,一邊從基板供給部101對基板處理部102供給薄片基板FB,一邊在基板處理部102於該薄片基板FB上陸續形成元件。具體而言,係與使用圖14至圖23說明之動作相同。Next, the component forming operation will be described. In the element forming operation, as shown in FIG. 2, while the substrate processing unit 101 supplies the sheet substrate FB from the substrate supply unit 101, the substrate processing unit 102 forms the element on the sheet substrate FB. Specifically, the operation is the same as that described using FIGS. 14 to 23 .

其次,說明卸除動作。例如於薄片基板FB形成有機EL元件50並回收薄片基板FB後,將作為基板供給部101使用之基板匣2001從基板處理部102卸除。Next, the removal operation will be described. For example, after the organic EL element 50 is formed on the sheet substrate FB and the sheet substrate FB is collected, the substrate 匣 2001 used as the substrate supply unit 101 is removed from the substrate processing unit 102.

圖45係顯示基板匣2001之卸除動作之圖。Fig. 45 is a view showing the removal operation of the substrate cassette 2001.

卸除動作中,使座部3往-X方向移動而從供給側連接部102A卸除。藉由卸除座部3,氣體供給部GS從氣體供給埠2004之供給口2041脫離,故基板用導引構件22a與基板用導引構件22b之間夾持薄片基板FB而再度成為閉狀態。In the unloading operation, the seat portion 3 is moved in the -X direction and is removed from the supply side connecting portion 102A. By the removal of the seat portion 3, the gas supply portion GS is detached from the supply port 2041 of the gas supply port 2004, and the sheet substrate FB is sandwiched between the substrate guide member 22a and the substrate guide member 22b, and is again closed.

如上述,在座部3與基板處理部102連接之狀態下基板用導引構件22a與基板用導引構件22b之間開啟故開口部34成為開狀態。在座部3與基板處理部102不連接之狀態下基板用導引構件22a與基板用導引構件22b之間夾持薄片基板FB而關閉,故開口部34藉由薄片基板FB成為閉狀態。As described above, when the seat portion 3 is connected to the substrate processing portion 102, the substrate guiding member 22a and the substrate guiding member 22b are opened, so that the opening portion 34 is opened. When the seat portion 3 and the substrate processing portion 102 are not connected, the sheet substrate FB is closed between the substrate guiding member 22a and the substrate guiding member 22b, and the opening portion 34 is closed by the sheet substrate FB.

如上述,根據本實施形態,由於具有:具有搬出搬入薄片基板FB之開口部34且收容通過該開口部34之薄片基板FB之匣本體2;設於該匣本體2且對供給側連接部102A及回收側連接部102B可裝卸地連接之座部3;且設為可對應於該座部3與供給側連接部102A及回收側連接部102B之間之連接狀態以薄片基板FB閉塞開口部34,故可防止從開口部34塵埃等異物之侵入。藉此,可防止於薄片基板FB有異物附著。As described above, according to the present embodiment, the main body 2 having the opening 34 that carries in and out of the sheet substrate FB and housing the sheet substrate FB passing through the opening 34 is provided in the main body 2 and on the supply side connecting portion 102A. The seat portion 3 to which the recovery-side connecting portion 102B is detachably connected, and the opening portion 34 can be closed by the sheet substrate FB in accordance with the connection state between the seat portion 3 and the supply-side connecting portion 102A and the collecting-side connecting portion 102B. Therefore, it is possible to prevent entry of foreign matter such as dust from the opening portion 34. Thereby, it is possible to prevent foreign matter from adhering to the sheet substrate FB.

此外,利用本實施形態,可使基板匣2001對對象物(例如基板處理部102)容易裝卸。Further, according to the present embodiment, the substrate 匣2001 can be easily attached and detached to an object (for example, the substrate processing unit 102).

本發明之技術範圍並不限於上述實施形態,可在不脫離本發明之主旨之範圍施加適當變更。The technical scope of the present invention is not limited to the above-described embodiments, and may be appropriately modified without departing from the spirit and scope of the invention.

在上述實施形態雖僅將基板用導引構件22a與基板用導引構件22b形成為氣墊狀,僅使氣體供給埠2004之供給口2041連接於開口部34之基板用導引構件22a與基板用導引構件22b,但並不限定於此,例如可使關於第2開口部35側之第2基板用導引構件37a與第2基板用導引構件37b亦為同樣之構成。In the above-described embodiment, only the substrate guiding member 22a and the substrate guiding member 22b are formed in an air cushion shape, and only the substrate guiding member 22a for connecting the supply port 2041 of the gas supply port 2004 to the opening portion 34 and the substrate are used. The guide member 22b is not limited thereto. For example, the second substrate guide member 37a on the second opening portion 35 side and the second substrate guide member 37b can be configured in the same manner.

例如圖46所示,可設置從供給口2041對第2基板用導引構件37a與第2基板用導引構件37b之流路2049,使該流路2049分歧為連接於第2基板用導引構件37a之第1流路2049a與連接於第2基板用導引構件37b之第2流路2049b。在此場合,於流路2042設電磁閥V1並於流路2049設電磁閥V2以使可在開口部34及第2開口部35獨立進行開閉控制亦無妨。電磁閥V1及電磁閥V2之控制可使例如控制部104或資訊處理部IC等進行。For example, as shown in FIG. 46, a flow path 2049 for the second substrate guiding member 37a and the second substrate guiding member 37b from the supply port 2041 can be provided, and the flow path 2049 can be branched to be connected to the second substrate guide. The first flow path 2049a of the member 37a and the second flow path 2049b connected to the second substrate guiding member 37b. In this case, the electromagnetic valve V1 is provided in the flow path 2042, and the electromagnetic valve V2 is provided in the flow path 2049 so that the opening 34 and the second opening 35 can be independently opened and closed. The control of the solenoid valve V1 and the solenoid valve V2 can be performed, for example, by the control unit 104 or the information processing unit IC.

此外,於上述實施形態中,雖係使基板用導引構件22a與基板用導引構件22b兼用做為於進行開口部34之開閉時將薄片基板FB夾入之夾持機構之構成,但並不限定於此,將該夾持機構設為基板用導引構件22a與基板用導引構件22b以外之機構亦可。Further, in the above-described embodiment, the substrate guiding member 22a and the substrate guiding member 22b are used together as a clamping mechanism for sandwiching the sheet substrate FB when opening and closing the opening 34, but The holding mechanism is not limited to this, and the holding mechanism may be a mechanism other than the substrate guiding member 22a and the substrate guiding member 22b.

FB...薄片基板FB. . . Thin substrate

PB...保護基板PB. . . Protective substrate

SYS、SYS2...基板處理系統SYS, SYS2. . . Substrate processing system

1、2001...基板匣1, 2001. . . Substrate

2...匣本體2. . .匣 body

3...座部3. . . Seat

4...閉塞部4. . . Occlusion

20...收容部20. . . Containment department

21...搬送部twenty one. . . Transport department

21a...張力滾筒21a. . . Tension roller

21b...測定滾筒21b. . . Measuring roller

21c...檢測部21c. . . Detection department

22...基板導引部twenty two. . . Substrate guide

22a、22b...基板用導引構件(夾持機構)22a, 22b. . . Guide member for substrate (clamping mechanism)

23...突出部twenty three. . . Protruding

24...基板驅動機構twenty four. . . Substrate drive mechanism

25...蓋部25. . . Cover

26...滾筒部26. . . Roller section

26c...接著部26c. . . Next

27...導引部27. . . Guide

28...窗部28. . . Window

29...顯示部29. . . Display department

34...開口部34. . . Opening

35...第2開口部35. . . Second opening

36...基板搬送部36. . . Substrate transfer unit

37...基板導引部37. . . Substrate guide

41...蓋構件41. . . Cover member

42...切換機構42. . . Switching mechanism

50...有機EL元件50. . . Organic EL element

51...卡合部51. . . Clamping department

100、202、300、310、320...基板處理裝置100, 202, 300, 310, 320. . . Substrate processing device

102A、302A、311A...供給側連接部102A, 302A, 311A. . . Supply side connection

102B、302B、311B...回收側連接部102B, 302B, 311B. . . Recycling side connection

103、223、312...基板回收部103, 223, 312. . . Substrate recycling department

201...基板製造裝置201. . . Substrate manufacturing device

203、303...中繼裝置203, 303. . . Relay device

211...基板製造部211. . . Substrate manufacturing department

211A、222A...連接部211A, 222A. . . Connection

222、302、311、321...基板處理部222, 302, 311, 321. . . Substrate processing unit

2004...氣體供給埠2004. . . Gas supply埠

2041...供給口2041. . . Supply port

2042、2043...流路2042, 2043. . . Flow path

2044a、2044b...氣體噴出口2044a, 2044b. . . Gas outlet

2045...按壓機構2045. . . Pressing mechanism

圖1係藉由本實施形態之基板處理裝置形成之有機EL元件之構成圖。Fig. 1 is a configuration diagram of an organic EL element formed by a substrate processing apparatus of the present embodiment.

圖2係顯示基板處理裝置之構成之圖。Fig. 2 is a view showing the configuration of a substrate processing apparatus.

圖3係顯示基板處理部之構成之圖。Fig. 3 is a view showing the configuration of a substrate processing unit.

圖4係顯示液滴塗布裝置之構成之圖。Fig. 4 is a view showing the configuration of a droplet applying device.

圖5係顯示基板匣之構成之立體圖。Fig. 5 is a perspective view showing the constitution of the substrate 匣.

圖6係顯示基板匣之構成之剖面圖。Fig. 6 is a cross-sectional view showing the structure of a substrate.

圖7係擴大顯示基板匣之構成之剖面之圖。Fig. 7 is a view showing a cross section showing an enlarged structure of the substrate 。.

圖8係顯示基板匣之一部分之構成之側面圖。Fig. 8 is a side view showing the constitution of a portion of the substrate.

圖9係顯示基板匣之一部分之構成之側面圖。Fig. 9 is a side view showing the constitution of a portion of the substrate.

圖10係顯示基板匣之收容動作之圖。Fig. 10 is a view showing the housing operation of the substrate cassette.

圖11係顯示基板匣之收容動作之圖。Fig. 11 is a view showing the housing operation of the substrate cassette.

圖12係顯示基板匣之連接動作之圖。Fig. 12 is a view showing the connection operation of the substrate 匣.

圖13係顯示基板匣之連接動作之圖。Fig. 13 is a view showing the connection operation of the substrate 匣.

圖14係顯示基板處理部之分隔壁形成步驟之圖。Fig. 14 is a view showing a step of forming a partition wall of the substrate processing portion.

圖15係顯示形成於薄片基板之分隔壁之形狀及配置之圖。Fig. 15 is a view showing the shape and arrangement of partition walls formed on a sheet substrate.

圖16係形成於薄片基板之分隔壁之剖面圖。Figure 16 is a cross-sectional view showing a partition wall formed on a sheet substrate.

圖17係顯示液滴之塗布動作之圖。Fig. 17 is a view showing the coating operation of the liquid droplets.

圖18係顯示形成於分隔壁間之薄膜之構成之圖。Fig. 18 is a view showing the constitution of a film formed between partition walls.

圖19係顯示於片基板形成閘極絕緣層之步驟之圖。Fig. 19 is a view showing a step of forming a gate insulating layer on a substrate.

圖20係顯示切斷薄片基板之配線之步驟之圖。Fig. 20 is a view showing a step of cutting the wiring of the sheet substrate.

圖21係顯示於源極汲極形成區域形成薄膜之步驟之圖。Fig. 21 is a view showing a step of forming a thin film in a source-drain formation region.

圖22係顯示形成有機半導體層之步驟之圖。Figure 22 is a view showing the steps of forming an organic semiconductor layer.

圖23係顯示對準一例之圖。Fig. 23 is a view showing an example of alignment.

圖24係顯示基板匣之卸除動作之圖。Fig. 24 is a view showing the removal operation of the substrate cassette.

圖25係顯示基板處理系統之構成之圖。Fig. 25 is a view showing the configuration of a substrate processing system.

圖26係顯示基板處理系統之構成之圖。Fig. 26 is a view showing the configuration of a substrate processing system.

圖27係說明薄片基板FB之回收動作之圖。Fig. 27 is a view for explaining the recovery operation of the sheet substrate FB.

圖28係說明薄片基板FB之回收動作之圖。Fig. 28 is a view for explaining the recovery operation of the sheet substrate FB.

圖29係說明薄片基板FB之回收動作之圖。Fig. 29 is a view for explaining the recovery operation of the sheet substrate FB.

圖30係顯示基板處理系統之其他構成之圖。Fig. 30 is a view showing another configuration of the substrate processing system.

圖31係顯示基板處理系統之構成之圖。Figure 31 is a diagram showing the configuration of a substrate processing system.

圖32係顯示基板處理裝置之構成之圖。Fig. 32 is a view showing the configuration of a substrate processing apparatus.

圖33係顯示基板處理裝置之構成之圖。Fig. 33 is a view showing the configuration of a substrate processing apparatus.

圖34係顯示基板處理裝置之滾筒之構成之圖。Figure 34 is a view showing the configuration of a drum of a substrate processing apparatus.

圖35係顯示其他基板處理裝置之閉塞部之構成之圖。Fig. 35 is a view showing the configuration of a closing portion of another substrate processing apparatus.

圖36係顯示其他有機EL元件之構成之圖。Fig. 36 is a view showing the constitution of other organic EL elements.

圖37係顯示本發明之另一實施形態之基板匣之構成之立體圖。Fig. 37 is a perspective view showing the configuration of a substrate cassette according to another embodiment of the present invention.

圖38係顯示基板匣之構成之剖面圖。Figure 38 is a cross-sectional view showing the structure of a substrate crucible.

圖39係顯示基板匣之一部分之構成之側面圖。Fig. 39 is a side view showing the constitution of a portion of the substrate 。.

圖40係顯示基板匣之一部分之構成之側面圖。Fig. 40 is a side view showing the constitution of a portion of the substrate.

圖41係顯示基板匣之收容動作之圖。Fig. 41 is a view showing the housing operation of the substrate cassette.

圖42係顯示基板匣之收容動作之圖。Fig. 42 is a view showing the housing operation of the substrate cassette.

圖43係顯示基板匣之連接動作之圖。Fig. 43 is a view showing the connection operation of the substrate 匣.

圖44係顯示基板匣之連接動作之圖。Fig. 44 is a view showing the connection operation of the substrate 匣.

圖45係顯示基板匣之卸除動作之圖。Fig. 45 is a view showing the removal operation of the substrate 匣.

圖46係顯示其他基板處理裝置之閉塞部之構成之圖。Fig. 46 is a view showing the configuration of a closing portion of another substrate processing apparatus.

1...基板匣1. . . Substrate

2...匣本體2. . .匣 body

3...座部3. . . Seat

3a...插入部3a. . . Insertion

3b...端面3b. . . End face

4...閉塞部4. . . Occlusion

20...收容部20. . . Containment department

23...突出部twenty three. . . Protruding

24...基板驅動機構twenty four. . . Substrate drive mechanism

25...蓋部25. . . Cover

25a...開口部25a. . . Opening

25b...軸承構件25b. . . Bearing component

26...滾筒部26. . . Roller section

28...窗部28. . . Window

29...顯示部29. . . Display department

34...開口部34. . . Opening

35...第2開口部35. . . Second opening

CR...通信部CR. . . Communication department

IC...資訊處理部IC. . . Information Processing Department

MR...儲存部MR. . . Storage department

Claims (44)

一種基板匣,可將具有可撓性之帶狀之基板收容既定之長度尺寸,其具備:具有搬出搬入基板之第1開口部且透過前述第1開口部收容前述基板之匣本體;設於前述匣本體且可裝卸地連接於處理前述基板之裝置之外部連接部之座部;前述座部連接於前述外部連接部之狀態時開啟前述第1開口部,前述座部從前述外部連接部卸下之狀態時閉塞前述第1開口部之閉塞部。 A substrate 收容 can accommodate a flexible strip-shaped substrate in a predetermined length dimension, and includes a cymbal body having a first opening for loading and unloading a substrate and accommodating the substrate through the first opening; a body portion detachably connected to a seat portion of an external connection portion of the device for processing the substrate; and when the seat portion is connected to the external connection portion, the first opening portion is opened, and the seat portion is detached from the external connection portion In the state, the closing portion of the first opening is closed. 如申請專利範圍第1項之基板匣,其中,前述第1開口部係設於前述座部。 The substrate according to claim 1, wherein the first opening is provided in the seat. 如申請專利範圍第1項之基板匣,其中,前述匣本體具有將前述基板捲取或將前述基板送出之基板驅動機構。 The substrate according to claim 1, wherein the crucible body has a substrate driving mechanism that winds the substrate or feeds the substrate. 如申請專利範圍第3項之基板匣,其中,前述匣本體具有連接於前述第1開口部且收容前述基板之收容部;前述基板驅動機構係設於前述收容部。 The substrate of claim 3, wherein the crucible body has an accommodating portion that is connected to the first opening and houses the substrate, and the substrate driving mechanism is provided in the accommodating portion. 如申請專利範圍第3項之基板匣,其中,前述基板驅動機構具有被保持成能旋轉之軸構件;將前述基板往前述軸構件導引或將前述基板往前述第1開口部導引之第1導引構件。 The substrate according to claim 3, wherein the substrate driving mechanism has a shaft member that is held rotatably; and the substrate is guided to the shaft member or the substrate is guided to the first opening. 1 guide member. 如申請專利範圍第5項之基板匣,其中,前述軸構件具有使前述基板接著之接著部。 The substrate according to claim 5, wherein the shaft member has a subsequent portion to which the substrate is attached. 如申請專利範圍第5項之基板匣,其中,前述第1導引構件被設為至少可於前述軸構件之旋轉之徑方向移動。 The substrate according to claim 5, wherein the first guiding member is movable at least in a radial direction of the rotation of the shaft member. 如申請專利範圍第3項之基板匣,其中,前述匣本體具有在前述第1開口部與前述基板驅動機構之間搬送前述基板之搬送機構。 The substrate of claim 3, wherein the crucible body has a transport mechanism that transports the substrate between the first opening and the substrate drive mechanism. 如申請專利範圍第8項之基板匣,其中,前述搬送機構具有對前述基板給予張力之張力機構。 The substrate according to claim 8, wherein the conveying mechanism has a tension mechanism that applies tension to the substrate. 如申請專利範圍第8項之基板匣,其中,前述搬送機構具有測定前述基板之搬送量之測定部。 The substrate cartridge according to claim 8, wherein the transport mechanism has a measuring unit that measures a transport amount of the substrate. 如申請專利範圍第10項之基板匣,其中,進一步具備使基於前述搬送量之資料儲存之儲存部。 The substrate of claim 10, further comprising a storage unit for storing data based on the amount of conveyance. 如申請專利範圍第10項之基板匣,其中,進一步具備進行基於前述搬送量之資料之通信之通信部。 The substrate of claim 10, further comprising a communication unit that performs communication based on the data of the transport amount. 如申請專利範圍第10項之基板匣,其中,進一步具備顯示基於前述搬送量之資料之顯示部。 The substrate of claim 10, further comprising a display unit that displays data based on the amount of conveyance. 如申請專利範圍第8項之基板匣,其中,前述匣本體具有在前述第1開口部與前述搬送機構之間導引前述基板之基板用導引構件。 The substrate of the eighth aspect of the invention, wherein the crucible body has a substrate guiding member that guides the substrate between the first opening and the conveying mechanism. 如申請專利範圍第1至14項中任一項之基板匣,其中,前述匣本體具有被設為可開閉之蓋部。 The substrate cartridge according to any one of claims 1 to 14, wherein the dam body has a lid portion that is openable and closable. 如申請專利範圍第1至14項中任一項之基板匣,其中,前述匣本體具有可觀察前述基板之收容狀態之窗部。 The substrate cartridge according to any one of claims 1 to 14, wherein the dam body has a window portion in which a state in which the substrate is accommodated is observed. 如申請專利範圍第1至14項中任一項之基板匣,其中,前述匣本體具有搬出搬入保護前述基板之保護基板之 第2開口部。 The substrate cartridge according to any one of claims 1 to 14, wherein the crucible body has a protective substrate that is carried in and carried out to protect the substrate. The second opening. 如申請專利範圍第17項之基板匣,其中,前述匣本體具有使前述保護基板往前述基板按壓之按壓機構。 The substrate according to claim 17, wherein the crucible body has a pressing mechanism for pressing the protective substrate against the substrate. 如申請專利範圍第18項之基板匣,其中,前述匣本體具有在前述第2開口部與前述按壓機構之間導引前述保護基板之保護基板用導引構件。 The substrate according to claim 18, wherein the crucible body has a protective substrate guiding member that guides the protective substrate between the second opening and the pressing mechanism. 如申請專利範圍第17項之基板匣,其中,前述閉塞部係被設為前述座部連接於前述外部連接部之狀態時開啟前述第2開口部,前述座部從前述外部連接部卸下之狀態時將前述第2開口部閉塞。 The substrate according to claim 17, wherein the blocking portion is configured to open the second opening when the seat portion is connected to the external connecting portion, and the seat portion is detached from the external connecting portion. In the state, the second opening is closed. 如申請專利範圍第20項之基板匣,其中,前述閉塞部係被設為可將前述第1開口部與前述第2開口部獨立切換為開啟狀態與閉塞狀態。 The substrate cartridge according to claim 20, wherein the blocking portion is configured to switch the first opening portion and the second opening portion independently to an open state and a closed state. 如申請專利範圍第21項之基板匣,其中,前述閉塞部具有分別設於前述第1開口部及前述第2開口部之蓋構件。 The substrate according to claim 21, wherein the blocking portion has a cover member provided in each of the first opening and the second opening. 如申請專利範圍第22項之基板匣,其中,前述閉塞部具有驅動前述蓋構件之開閉之驅動機構或對應於前述座部與前述外部連接部之間之連接狀態切換前述蓋構件之開閉之切換機構。 The substrate cartridge of claim 22, wherein the blocking portion has a driving mechanism for driving opening and closing of the cover member or switching between opening and closing of the cover member corresponding to a connection state between the seat portion and the external connecting portion mechanism. 如申請專利範圍第1至14項中任一項之基板匣,其中,前述基板係以至少一部分互相重疊之形式收容於前述匣本體。 The substrate according to any one of claims 1 to 14, wherein the substrate is housed in the body of the crucible at least partially overlapping each other. 如申請專利範圍第1至14項中任一項之基板匣,其 中,前述基板係以捲軸狀收容於前述匣本體。 A substrate crucible according to any one of claims 1 to 14, wherein The substrate is housed in the spool body in a reel shape. 一種基板處理裝置,其具備:將具有可撓性之帶狀之基板連續處理之基板處理部;可與申請專利範圍第1至14項中任一項之基板匣之前述座部連接之做為前述外部連接部之基板處理側連接部。 A substrate processing apparatus comprising: a substrate processing unit that continuously processes a flexible strip-shaped substrate; and is connectable to the seat portion of the substrate cassette according to any one of claims 1 to 14 The substrate processing side connecting portion of the external connection portion. 如申請專利範圍第26項之基板處理裝置,其中,前述基板處理側連接部係設於前述基板處理部之基板搬入側及基板搬出側之中至少一方。 The substrate processing apparatus according to claim 26, wherein the substrate processing-side connecting portion is provided on at least one of a substrate carrying-in side and a substrate carrying-out side of the substrate processing unit. 如申請專利範圍第26項之基板處理裝置,其中,前述基板處理側連接部係被設為可移動。 The substrate processing apparatus according to claim 26, wherein the substrate processing side connecting portion is movable. 如申請專利範圍第26項之基板處理裝置,其中,前述基板處理側連接部係設有複數個。 The substrate processing apparatus according to claim 26, wherein the substrate processing side connecting portion is provided in plurality. 如申請專利範圍第26項之基板處理裝置,其中,使用前述基板匣做為往前述基板處理部供給前述基板之供給部及從前述基板處理部回收前述基板之回收部之中至少一方。 The substrate processing apparatus according to claim 26, wherein the substrate is used as at least one of a supply unit that supplies the substrate to the substrate processing unit and a recovery unit that collects the substrate from the substrate processing unit. 如申請專利範圍第26至30項中任一項之基板處理裝置,其中,前述基板處理部包含於前述基板上形成顯示元件之動作及搬送前述基板之動作之中至少一方。 The substrate processing apparatus according to any one of the preceding claims, wherein the substrate processing unit includes at least one of an operation of forming a display element on the substrate and an operation of transporting the substrate. 一種基板處理系統,其具備:對基板進行第1處理之第1處理裝置;對前述第1處理後之前述基板進行第2處理之第2處理裝置;從前述第1處理裝置回收前述基板並將回收之前述基 板往前述第2處理裝置供給之基板中繼裝置;使用申請專利範圍第1至14項中任一項之基板匣做為前述基板中繼裝置。 A substrate processing system comprising: a first processing device that performs a first process on a substrate; a second processing device that performs a second process on the substrate after the first process; and recovers the substrate from the first processing device and Recycling of the aforementioned base A substrate relay device that is supplied to the second processing device, and a substrate that is used in any one of claims 1 to 14 is used as the substrate relay device. 如申請專利範圍第32項之基板處理系統,其中,前述第1處理包含於前述基板形成電路之處理;前述第2處理包含於前述基板形成像素之處理。 The substrate processing system according to claim 32, wherein the first process includes a process of forming the substrate forming circuit, and the second process includes a process of forming a pixel on the substrate. 如申請專利範圍第32項之基板處理系統,其中,對應於前述第1處理裝置與前述第2處理裝置之各自之處理資訊來使用前述基板中繼裝置。 The substrate processing system of claim 32, wherein the substrate relay device is used in accordance with processing information of each of the first processing device and the second processing device. 如申請專利範圍第34項之基板處理系統,其中,具備管理至少前述處理資訊之系統控制部。 The substrate processing system of claim 34, comprising a system control unit that manages at least the processing information. 如申請專利範圍第32至35項中任一項之基板處理系統,其中,進一步具備控制前述第1處理裝置、前述第2處理裝置及前述基板中繼裝置之主控制部。 The substrate processing system according to any one of claims 32 to 35, further comprising a main control unit that controls the first processing device, the second processing device, and the substrate relay device. 如申請專利範圍第36項之基板處理系統,其中,前述主控制部係對應於基於前述基板之搬送量之資料判斷前述基板中繼裝置之中繼對象。 The substrate processing system of claim 36, wherein the main control unit determines a relay target of the substrate relay device based on data based on a conveyance amount of the substrate. 一種顯示元件之製造方法,具有:於用來製造顯示裝置之顯示元件之處理部處理具有可撓性之帶狀之基板之步驟;使用記載於申請專利範圍第1至14項中任一項之基板匣對前述基板處理部供給前述基板之步驟。 A method of manufacturing a display device, comprising: a step of processing a substrate having a flexible strip shape in a processing unit for manufacturing a display element of a display device; and using any one of items 1 to 14 of the patent application scope The step of supplying the substrate to the substrate processing unit by the substrate 。. 如申請專利範圍第1項之基板匣,其中,前述閉塞部具備配置於前述第1開口部內夾持前述基板之夾持機構; 前述夾持機構係在夾持有前述基板之狀態下閉塞前述第1開口部。 The substrate according to claim 1, wherein the blocking portion includes a clamping mechanism disposed in the first opening to sandwich the substrate; The clamping mechanism closes the first opening in a state in which the substrate is sandwiched. 如申請專利範圍第39項之基板匣,其中,前述夾持機構於夾持前述基板之部分具有供給氣體之氣體噴出口。 The substrate cartridge of claim 39, wherein the clamping mechanism has a gas discharge port for supplying a gas to a portion sandwiching the substrate. 如申請專利範圍第40項之基板匣,其中,前述氣體噴出口係噴出前述氣體以使前述夾持機構與前述基板之間有間隙產生。 The substrate according to claim 40, wherein the gas ejection port ejects the gas to cause a gap between the clamping mechanism and the substrate. 如申請專利範圍第40或41項之基板匣,其中,前述匣本體具有以前述座部連接於前述外部連接部之狀態時使前述氣體可噴出,前述座部從前述外部連接部卸下之狀態時使前述氣體非噴出之方式切換之切換機構。 The substrate of claim 40 or 41, wherein the crucible body has a state in which the gas is ejected when the seat portion is connected to the external connection portion, and the seat portion is detached from the external connection portion. A switching mechanism that switches the manner in which the gas is not ejected. 一種基板匣,收容形成電路之帶狀且可撓性之薄片基板,其具備:匣本體,包含為了將前述薄片基板於長度方向搬出搬入而於前述薄片基板之寬度方向延伸之第1開口部、於該第1開口部之延伸方向具有旋轉中心軸而可將前述薄片基板捲取既定之長度尺寸之可旋轉之軸構件、可開閉前述第1開口部之蓋部,且將前述薄片基板收容為捲軸狀;座部,設於前述匣本體且可裝卸地連接於處理前述薄片基板之處理裝置之外部連接部;切換機構,以於將前述座部連接於前述外部連接部時使前述第1開口部為開狀態、於將前述座部從前述外部連接部卸除時使前述第1開口部為閉狀態之方式將前述蓋部開閉。 A substrate 收容 accommodating a strip-shaped and flexible sheet substrate forming a circuit, comprising: a cymbal body including a first opening extending in a width direction of the sheet substrate to carry the sheet substrate in and out in a longitudinal direction, a rotatable shaft member that can wind the sheet substrate in a predetermined length dimension in a direction in which the first opening portion extends, a lid portion that can open and close the first opening portion, and the sheet substrate is housed as a reel shape; a seat portion provided in the body of the crucible and detachably connected to an external connection portion of the processing device for processing the sheet substrate; and a switching mechanism for causing the first opening when the seat portion is connected to the external connection portion The lid portion is opened and closed so that the first opening portion is closed when the seat portion is removed from the external connection portion. 一種基板匣,收容形成電路之帶狀且可撓性之薄片基板,其具備:匣本體,包含為了將前述薄片基板於長度方向搬出搬入而於前述薄片基板之寬度方向延伸之第1開口部、於該第1開口部之延伸方向具有旋轉中心軸而可將前述薄片基板捲取既定之長度尺寸之可旋轉之軸構件、於前述第1開口部內設為可動並將前述薄片基板夾持或解放之夾持機構;座部,設於前述匣本體且可裝卸地連接於處理前述薄片基板之處理裝置之外部連接部;前述夾持機構係於前述座部被從前述外部連接部卸除時夾持前述薄片基板並將前述第1開口部關閉,於前述座部被連接於前述外部連接部時解放前述薄片基板並將前述第1開口部開啟。 A substrate 收容 accommodating a strip-shaped and flexible sheet substrate forming a circuit, comprising: a cymbal body including a first opening extending in a width direction of the sheet substrate to carry the sheet substrate in and out in a longitudinal direction, a rotatable shaft member that has a rotation center axis in a direction in which the first opening extends, and that can wind the sheet substrate by a predetermined length, is movable in the first opening, and sandwiches the sheet substrate or a liberating clamping mechanism; the seat portion is disposed on the 匣 body and detachably connected to an external connection portion of the processing device for processing the sheet substrate; and the clamping mechanism is when the seat portion is detached from the external connection portion The sheet substrate is sandwiched and the first opening is closed, and when the seat portion is connected to the external connection portion, the sheet substrate is released and the first opening portion is opened.
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