TWI540777B - Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the apparatus - Google Patents

Description

Thin film deposition apparatus and method of manufacturing organic light emitting display element using the same

Embodiments of the present invention relate to a thin film deposition apparatus, a method of manufacturing an organic light emitting display element using the thin film deposition apparatus, and an organic light emitting display element manufactured using the method.

Compared to other display elements, the organic light-emitting display element has a larger viewing angle, better contrast characteristics, and a faster response rate, and thus has been valued as a next-generation display element.

The organic light emitting display element generally has a stacked structure including an anode, a cathode, and an emission layer disposed between the anode and the cathode. When the holes and electrons respectively injected from the anode and the cathode are recombined in the emissive layer, the elements display a color image and thus emit light. However, with this structure, it is difficult to achieve high luminous efficiency, and a plurality of intermediate layers (which include an electron injecting layer, an electron transporting layer, a hole transporting layer, a hole injecting layer, or the like) are thus additionally disposed in the case where The emissive layer and each of the electrodes.

In addition, it is actually in the organic film (for example, the emissive layer and the intermediate layers) It is very difficult to form a fine pattern, and the luminous efficiencies of red, green, and blue are also changed depending on the organic films. For these reasons, it is not easy to form an organic thin film pattern on a large substrate (for example, a mother glass having a size of 5 G or more) using a conventional thin film deposition apparatus, and therefore, it is necessary to manufacture a satisfactory driving. Large organic light-emitting display elements characterized by voltage, current density, brightness, color purity, luminous efficiency, and lifetime are quite difficult. Therefore, improvements are needed in these areas.

The organic light emitting display element includes a plurality of intermediate layers including an emission layer disposed between the first electrode and the second electrode which are arranged opposite to each other. The electrodes and the emissive layers can be formed by various methods, one of which is a deposition method. When the organic light emitting display element is fabricated by the deposition method, a Fine Metal Mask (FMM) having the same pattern as the film to be formed is disposed in close contact with the substrate, and the film material is disposed at the Above the FMM to form a film with the desired pattern.

According to an embodiment of the present invention, there is provided a thin film deposition apparatus which can be easily fabricated, which can be directly used for mass production of a large-sized display element, and which improves manufacturing yield and deposition efficiency; according to an embodiment of the present invention, there is also provided a use of the film A method of manufacturing an organic light emitting display element by a deposition apparatus, and an organic light emitting display element manufactured using the method.

According to an aspect of the present invention, a thin film deposition apparatus for producing a thin film on a substrate, the apparatus comprising a plurality of thin film deposition assemblies, each of the thin film deposition assemblies comprising: a deposition source including a deposition material, the deposition a source system for releasing the deposition material; a deposition source nozzle unit that is arranged on one side of the deposition source and packaged a plurality of deposition source nozzles arranged in the first direction; a pattern slit sheet which is arranged in a direction opposite to the deposition source nozzle unit and having a plurality of arranged in the first direction a pattern slit; and a barrier panel assembly including a plurality of barrier sheets arranged in the first direction, the barrier panel fittings being arranged between the deposition source nozzle unit and the pattern slit sheet, the barrier a plate fitting for dividing a space between the deposition source nozzle unit and the pattern slit sheet into a plurality of sub-deposition spaces, wherein the thin film deposition apparatus is separated from the substrate by a distance, the thin film deposition apparatus and the substrate The material may be moved relative to each other, the deposition material comprising a material for producing a film selected from the group consisting of: a red (R) emissive layer, a green (G) emissive layer, a blue (B) emissive layer, and a plurality of Auxiliary layer.

The number of thin film deposition fittings may be at least five, and the deposition materials respectively arranged in the deposition sources of the at least five thin film deposition assemblies may include sequentially for forming the B emission layer, one of the auxiliary The layer, the G emissive layer, the other of the auxiliary layers, and the material of the R emissive layer. The number of thin film deposition fittings may be at least five, and the deposition materials respectively arranged in the deposition sources of the at least five thin film deposition assemblies may include sequentially for forming the B emission layer, one of the auxiliary The layer, the R emissive layer, the other of the auxiliary layers, and the material of the G emissive layer. The deposition materials may be arranged in the deposition sources of the plurality of thin film deposition assemblies, respectively, and may be sequentially deposited on the substrate. One of the thin film deposition apparatus and the substrate may move relative to the other of the thin film deposition apparatus and the substrate along a plane parallel to a surface on which the deposition material is deposited. The patterned slit sheets of the plurality of thin film deposition assemblies may be smaller than the substrate. The deposition temperatures of the deposition sources of the plurality of thin film deposition assemblies can each be controlled. Each of these thin film deposition fittings may have a barrier panel fitting A flow path is formed for the deposited material that is released from the deposition source. Each of the barrier panels may extend in a second direction substantially perpendicular to the first direction and may divide the space between the deposition source nozzle unit and the pattern slit sheet into a plurality of sub-deposition spaces.

Each of the barrier panel assemblies may include: a first barrier panel assembly including a plurality of first barrier panels; and a second barrier panel assembly including a plurality of second barrier panels. Each of the first barrier panels and each of the second barrier panels may extend in a second direction substantially perpendicular to the first direction and the deposition source nozzle unit and the pattern slit sheet may be The space between the two is divided into a plurality of sub-deposition spaces.

According to another aspect of the present invention, a thin film deposition apparatus for producing a thin film on a substrate, the apparatus comprising a plurality of thin film deposition assemblies, each of the thin film deposition assemblies may include: a deposition source including a deposition material, a deposition source for discharging the deposition material; a deposition source nozzle unit that is arranged on one side of the deposition source and includes a plurality of deposition source nozzles arranged in the first direction; and a pattern slit sheet, It will be arranged in a direction opposite to the deposition source nozzle unit and have a plurality of pattern slits arranged in a second direction perpendicular to the first direction, wherein the substrate and the substrate are deposited One of the thin film deposition devices moves in the first direction relative to the other of the substrate and the thin film deposition apparatus, and the deposition source, the deposition source nozzle unit, and the pattern slit sheet are integrally formed Arranged into a single body, and the deposition material comprises a material that produces a film selected from the group consisting of: R emission layer, G emission layer B emission layer, and a plurality of secondary layers.

The deposition source, the deposition source nozzle unit, and the pattern slit sheet may be connected by a joint portion The pieces are integrally formed into a single body. The connecting member may form a flow path for the deposited material. The connecting member may seal a space between the deposition source nozzle unit arranged on the deposition source side and the pattern slit sheet. The thin film deposition apparatus may be separated from the substrate by a distance. When one of the substrate and the thin film deposition apparatus moves in the first direction relative to the other of the substrate and the thin film deposition apparatus, the deposition material released from the thin film deposition apparatus may It is continuously deposited on the substrate. The plurality of deposition source nozzles may be inclined at an angle. The plurality of deposition source nozzles may include a plurality of deposition source nozzles arranged in two columns extending in the first direction, and the deposition source nozzles among the two columns may be inclined to face each other. The plurality of deposition source nozzles include a plurality of deposition source nozzles arranged in two columns formed in the first direction, and the deposition source nozzles in a column on the first side of the pattern slit sheet The deposition source nozzles are arranged to face the second side of the pattern slit sheet, and the deposition source nozzles located in the other column of the second side of the pattern slit sheet are arranged to face the first side of the pattern slit sheet.

According to still another aspect of the present invention, there is provided a method of fabricating an organic light emitting display element by forming a thin film on a substrate using a thin film deposition apparatus, the method comprising: arranging the substrate to be separated from the thin film deposition apparatus by a distance And depositing a deposition material released from the thin film deposition apparatus on the substrate when one of the thin film deposition apparatus and the substrate moves relative to the other of the thin film deposition apparatus and the substrate. Wherein, the thin film deposition apparatus comprises a plurality of thin film deposition assemblies, each of the thin film deposition assemblies comprising: a deposition source comprising a deposition material, the deposition source is for releasing the deposition material; and a deposition source nozzle unit, Arranged on one side of the deposition source and containing a plurality of deposition source jets arranged in the first direction a slit; a pattern slit sheet which is arranged in a direction opposite to the deposition source nozzle unit and having a plurality of pattern slits arranged in the first direction; and a barrier panel fitting including a plurality of barrier plates in the first direction, the barrier plate fittings being arranged between the deposition source nozzle unit and the pattern slit sheet, the barrier plate fittings being used for the deposition source nozzle unit and the pattern The space between the slit sheets is divided into a plurality of sub-deposition spaces, and the deposition material may comprise a material for producing a film in the group consisting of: a red (R) emissive layer, a green (G) emissive layer, and a blue Color (B) emission layer and a plurality of auxiliary layers.

According to still another aspect of the present invention, there is provided a method of fabricating an organic light emitting display element by forming a thin film on a substrate using a thin film deposition apparatus, the method comprising: arranging the substrate to be spaced apart from the thin film deposition apparatus, and When one of the thin film deposition apparatus and the substrate is moved relative to the other of the thin film deposition apparatus and the substrate, deposition material released from the thin film deposition apparatus is deposited on the substrate. Wherein, the thin film deposition apparatus comprises a plurality of thin film deposition assemblies, each of the thin film deposition assemblies comprising: a deposition source comprising a deposition material, the deposition source is for releasing the deposition material; and a deposition source nozzle unit, Arranging on one side of the deposition source and including a plurality of deposition source nozzles arranged in the first direction; and pattern slit sheets which are arranged in a direction opposite to the deposition source nozzle unit and have been a plurality of pattern slits arranged in a second direction perpendicular to the first direction, wherein the deposited material may comprise a material that produces a film selected from the group consisting of: R emission layer, G An emission layer, a B emission layer, and a plurality of auxiliary layers.

Depositing materials for forming the B emissive layer, one of the auxiliary layers, the G emissive layer, the other of the auxiliary layers, and the R emissive layer, respectively, may be from the plural The thin film deposition joints are released and may be deposited on the substrate in sequence. Depositing materials respectively for forming the B emissive layer, one of the auxiliary layers, the R emissive layer, the other of the auxiliary layers, and the G emissive layer may be released from the plurality of thin film deposition joints, respectively. And may be deposited on the substrate in sequence. The deposition materials respectively disposed in the deposition sources of the plurality of thin film deposition assemblies may be sequentially deposited on the substrate. Depositing the deposition material on the substrate may further comprise separately controlling the deposition temperatures of the plurality of thin film deposition assemblies.

According to still another aspect of the present invention, there is provided an organic light emitting display element formed by forming a thin film on a substrate using a thin film deposition apparatus, the method comprising: arranging the substrate to be separated from the thin film deposition apparatus by a distance and A deposition material released from the thin film deposition apparatus is deposited on the substrate when the film deposition apparatus and the substrate are moved relative to the other of the thin film deposition apparatus and the substrate. Wherein, the thin film deposition apparatus comprises a plurality of thin film deposition assemblies, each of the thin film deposition assemblies comprising: a deposition source comprising a deposition material, the deposition source is for releasing the deposition material; and a deposition source nozzle unit, Arranging on one side of the deposition source and including a plurality of deposition source nozzles arranged in the first direction; and pattern slit sheets which are arranged in a direction opposite to the deposition source nozzle unit and have been a plurality of pattern slits arranged in a second direction perpendicular to the first direction, wherein the deposited material may comprise a material that produces a film selected from the group consisting of: R emission layer, G An emission layer, a B emission layer, and a plurality of auxiliary layers.

According to still another aspect of the present invention, an organic light emitting display element includes a plurality of pixels, wherein each of the pixels includes: a G sub-pixel including a G An emission layer and a G auxiliary layer; an R sub-pixel including an R emission layer and an R auxiliary layer; and a B sub-pixel including a B emission layer, the G auxiliary layer being arranged in the B emission layer and the G emission layer The R auxiliary layer is arranged between the G emitting layer and the R emitting layer. The end portion of the G auxiliary layer may overlap the end portion of the B emission layer, and the G emission layer may be arranged above the G auxiliary layer. The end portion of the R auxiliary layer may overlap the end portion of the G emission layer, and the R emission layer may be arranged above the R auxiliary layer. The B emissive layer and the G emissive layer may be separated from each other by a first distance, and the G emissive layer and the R emissive layer may be separated from each other by a second distance. The display may further include a substrate and first and second electrodes arranged to be opposite to each other, wherein the B emission layer, the G emission layer, and the R emission layer, and the G auxiliary layer and the R auxiliary layer may be Arranged between the first electrode and the second electrode. The G auxiliary layer and the R auxiliary layer may have different thicknesses from each other.

According to still another aspect of the present invention, an organic light emitting display element includes a plurality of pixels, wherein each of the pixels may include: a G sub-pixel including a G emission layer and a G auxiliary layer; and a R sub-pixel Having an R emissive layer and an R auxiliary layer; and a B sub-pixel comprising a B emissive layer, which may be arranged between the B emissive layer and the R emissive layer, and the G auxiliary layer may be Arranged between the R emitting layer and the G emitting layer. The end portion of the R auxiliary layer may overlap the end portion of the B emission layer, and the R emission layer may be arranged above the R auxiliary layer. The end portion of the G auxiliary layer may overlap the end portion of the R emission layer, and the G emission layer may be arranged above the G auxiliary layer. The B emissive layer and the R emissive layer may be separated by a first distance, and the R emissive layer and the G emissive layer may be separated by a second distance. The display may further include a substrate and a first electrode and a second electrode arranged to be opposite to each other, the B emission layer, the G emission layer, and the R emission layer, and the G auxiliary layer and The R auxiliary layer may be arranged between the first and second electrodes. The G auxiliary layer and the R auxiliary layer may have different thicknesses from each other.

50‧‧‧Substrate

51‧‧‧buffer layer

52‧‧‧Active layer

52a‧‧‧Channel area

52b, 52c‧‧‧ source/bungee area

53‧‧‧ gate insulation

54‧‧‧gate electrode

55‧‧‧Interlayer insulation

56‧‧‧Source/drain electrodes

57‧‧‧Source/drain electrodes

58‧‧‧ Passivation layer

59‧‧‧Flating layer

60‧‧‧ pixel definition layer

61‧‧‧First electrode

62‧‧‧Organic layer

62B‧‧‧B emission layer

62G‧‧‧G emission layer

62G’‧‧‧G’ auxiliary layer

62R‧‧‧R emission layer

62R’‧‧‧R’ auxiliary layer

63‧‧‧second electrode

100‧‧‧film deposition accessories

110‧‧‧Sedimentary source

111‧‧‧ Shabu Shabu

112‧‧‧heater

115‧‧‧Deposited materials

120‧‧‧Secondary source nozzle unit

121‧‧‧Sediment source nozzle

130‧‧‧Barrier plate accessories

131‧‧‧Barrier board

132‧‧‧Barrier frame

135‧‧‧Connecting parts

150‧‧‧pattern slit sheet

151‧‧‧ pattern slit

151a-b‧‧‧slit

155‧‧‧Frame

200‧‧‧film deposition accessories

210‧‧‧Sedimentary source

215‧‧‧deposited materials

250‧‧‧pattern slit sheet

300‧‧‧film deposition accessories

310‧‧‧Sedimentary source

315‧‧‧deposited materials

350‧‧‧pattern slit sheet

400‧‧‧film deposition accessories

410‧‧‧Sedimentary source

415‧‧‧deposited materials

450‧‧‧pattern slit sheet

500‧‧‧film deposition accessories

510‧‧‧Sedimentary source

515‧‧‧deposited materials

550‧‧‧pattern slit sheet

600‧‧‧Substrate

700‧‧‧film deposition accessories

710‧‧‧Sedimentary source

711‧‧‧ Shabu Shabu

712‧‧‧heater

715‧‧‧deposited materials

720‧‧‧Secondary source nozzle unit

721‧‧‧Sediment source nozzle

730‧‧‧First barrier board accessories

731‧‧‧First barrier board

732‧‧‧First barrier panel frame

740‧‧‧Second barrier board accessories

741‧‧‧Second barrier board

742‧‧‧Second barrier frame

750‧‧‧pattern slit sheet

751‧‧‧pattern slit

755‧‧‧Frame

800‧‧‧Electrical chuck

801‧‧‧ Subject

802‧‧‧electrode

810‧‧‧First shipping unit

820‧‧‧Second transport unit

910‧‧‧Loading unit

912‧‧‧First shelf

914‧‧‧Transport automatic robot

916‧‧‧Transportation reaction room

918‧‧‧First reverse reaction chamber

919‧‧‧First reverse automatic robot

920‧‧‧Unloading unit

922‧‧‧Second rack

924‧‧‧Injecting automatic robot

926‧‧‧ shot reaction chamber

928‧‧‧Second reverse reaction chamber

929‧‧‧Second reverse automatic robot

930‧‧‧Deposition unit

931‧‧‧First Reaction Chamber

932‧‧‧Second reaction room

1100‧‧‧film deposition accessories

1110‧‧‧Sedimentary source

1111‧‧‧ Shabu Shabu

1112‧‧‧heater

1115‧‧‧deposited materials

1120‧‧‧Deposition source nozzle unit

1121‧‧‧ deposition source nozzle

1135‧‧‧Connecting parts

1150‧‧‧pattern slit sheet

1151‧‧‧ pattern slit

1155‧‧‧Frame

1200‧‧‧film deposition accessories

1210‧‧‧Sedimentary source

1211‧‧‧ Shabu Shabu

1212‧‧‧heater

1215‧‧‧Deposited materials

1220‧‧‧Deposition source nozzle unit

1221‧‧‧Sediment source nozzle

1221a-b‧‧‧ deposition source nozzle

1235‧‧‧Connecting parts

1250‧‧‧pattern slit sheet

1251‧‧‧ pattern slit

1255‧‧‧Frame

S‧‧‧Sub-sediment space

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and aspects of the present invention will become more apparent from the detailed description of the exemplary embodiments of the invention. Figure 2 is a schematic cross-sectional view of the thin film deposition assembly shown in Figure 1 according to the first embodiment of the present invention; Figure 3 is a schematic plan view of the thin film deposition assembly of Figure 1; Shown is a schematic perspective view of a thin film deposition apparatus according to a first embodiment of the present invention; and FIGS. 5A and 5B are cross-sectional views of a pixel of an organic light emitting display element manufactured by using the thin film deposition apparatus of FIG. 4; 6 is a schematic perspective view of a film deposition fitting according to a second embodiment of the present invention; FIG. 7 is a schematic perspective view of a film deposition fitting according to a third embodiment of the present invention; 7 is a schematic side view of a film deposition fitting; FIG. 9 is a schematic plan view of the film deposition fitting of FIG. 7; FIG. 10 is a schematic perspective view of a film deposition fitting according to a fourth embodiment of the present invention. Figure 11 is a schematic diagram showing a distribution pattern of a deposited film formed on a substrate when the deposition source nozzle is not tilted in the thin film deposition assembly according to the fourth embodiment of the present invention; 12 is a schematic diagram showing a distribution pattern of a deposited film formed on a substrate when a deposition source nozzle is tilted among the thin film deposition fittings according to a fourth embodiment of the present invention; A schematic view of a thin film deposition apparatus according to an embodiment of the present invention; a schematic view of a modified example of the thin film deposition apparatus of FIG. 13 shown in FIG. 14; and FIG. 15 is an embodiment of the present invention, FIG. A cross-sectional view of an example of an electrostatic chuck.

Priority is claimed on Korean Patent Application No. 10-2010-0039496, the entire disclosure of which is hereby incorporated by reference.

Hereinafter, a thin film deposition apparatus and a method of manufacturing an organic light emitting display element using the thin film deposition apparatus according to an embodiment of the present invention will be described in detail.

Referring now to FIGS. 1 through 3, there is shown a schematic perspective view of a thin film deposition assembly 100 in accordance with a first embodiment of the present invention; and a schematic cross-sectional view of the thin film deposition assembly 100 shown in FIG. And FIG. 3 is a schematic plan view of the thin film deposition assembly 100 shown in FIG.

Referring to FIGS. 1, 2, and 3, a thin film deposition assembly 100 according to a first embodiment of the present invention includes a deposition source 110, a deposition source nozzle unit 120, a barrier plate assembly 130, and a pattern slit sheet 150.

For ease of explanation, the reaction chambers are not shown in Figures 1, 2, and 3; however, all of the components of the thin film deposition apparatus 100 may be disposed in a reaction chamber maintained at an appropriate vacuum level. The reaction chamber will be maintained at a suitable vacuum to allow the deposited material to move through the thin film deposition apparatus 100 in a substantially straight line.

Specifically, in order to deposit a deposition material 115 that is ejected from the deposition source 110 and released through the deposition source nozzle unit 120 and the pattern slit sheet 150 in a desired pattern on the substrate 600, The reaction chamber must be maintained in a high vacuum state as in a deposition method using a fine metal mask (FMM). Further, the temperatures of the plurality of barrier sheets 131 and the pattern slit sheet 150 must also be sufficiently lower than the temperature of the deposition source 110. In this regard, the temperature of the barrier sheets 131 and the pattern slit sheet 150 may be about 100 ° C or lower. This is because when the temperature of the barrier sheets 131 is low, the deposition material 115 striking the barrier sheets 131 may not evaporate. Further, when the temperature of the pattern slit sheet 150 is low, the thermal expansion of the pattern slit sheet 150 can also be reduced or minimized. The barrier panel assembly 130 is oriented toward a deposition source 110 located at a high temperature. In addition, the temperature in the barrier panel assembly 130 adjacent a portion of the deposition source 110 may rise to about a maximum of 167 ° C, and thus, if necessary, may further include a partial cooling device. To this end, the barrier panel assembly 130 may include a cooling component.

A substrate 600 is disposed in the reaction chamber, and the substrate 600 constitutes a deposition target on which a deposition material 115 is to be deposited. The substrate 600 may be used for a plane The substrate of the display. A large substrate (e.g., a mother glass substrate) for fabricating a plurality of flat panel displays can be used as the substrate 600. Other substrates can also be used.

In a first embodiment of the invention, deposition may be performed while one of the substrate 600 and the thin film deposition assembly 100 is moved relative to the other of the substrate 600 and the thin film deposition assembly 100.

In particular, in the conventional FMM deposition method, the size of the FMM must be equal to the size of a substrate. Therefore, as the substrate becomes larger, the size of the FMM must increase. However, it is not easy to make a large FMM, and it is not easy to expand the FMM to precisely align the pattern.

To overcome this problem, in the thin film deposition assembly 100 according to the first embodiment of the present invention, deposition may be performed while one of the thin film deposition assembly 100 and the substrate 600 is moved relative to the other. In other words, the deposition may be continuously performed while the substrate 600 (which will be disposed to face the thin film deposition assembly 100) moves in the Y-axis direction. In other words, the deposition is performed in a scanning manner as the substrate 600 moves in the direction of the arrow A in FIG. When the deposition is carried out, the substrate 600 shown in the drawing moves in the Y-axis direction in FIG. 3; however, the present invention is not limited thereto. The deposition may also be performed when the thin film deposition assembly 100 is moved in the Y-axis direction and the substrate 600 is fixed.

Therefore, in the thin film deposition assembly 100 according to the first embodiment of the present invention, the pattern slit sheet 150 may be significantly smaller than the FMM used in the conventional deposition method. In other words, in the thin film deposition assembly 100 according to the first embodiment of the present invention, deposition is continuously performed while the substrate 600 is moved in the Y-axis direction, that is, in a scanning manner. Therefore, the pattern slit sheet 150 is in the X-axis direction and the Y-axis direction The length may be significantly smaller than the length of the substrate 600 in the X-axis direction and the Y-axis direction. As described above, since the pattern slit sheet 150 can be formed to be significantly smaller than the FMM used in the conventional deposition method, it is relatively easy to manufacture the pattern slit sheet 150 used in the embodiment of the present invention. In other words, the use of a pattern slit sheet 150 that is smaller than the FMM used in conventional deposition methods is more convenient for use in all processes, including etching and other subsequent processes, as compared to conventional deposition methods using larger FMMs. For example, precise extension, welding, moving, and cleaning processes. This would be more suitable or advantageous for comparing large display elements.

To perform deposition as the film deposition assembly 100 or the substrate 600 moves relative to the other as described above, the film deposition assembly 100 and the substrate 600 may be separated from each other (for example, separated by a predetermined distance). It will be explained in detail later.

A deposition source 110 containing and heating the deposition material 115 will be disposed on the reverse side of the substrate 600 in the reaction chamber. When the deposition material 115 contained in the deposition source 110 is evaporated, the deposition material 115 is deposited on the substrate 600.

Specifically, the deposition source 110 includes: a crucible 111 filled with the deposition material 115; and a heater 112 that heats the crucible 111 to evaporate the deposition material 115 arranged in the crucible 111 so that The evaporated deposition material 115 is moved to the deposition source nozzle unit 120.

The deposition source nozzle unit 120 is disposed at a side of the deposition source 110 facing the substrate 600. The deposition source nozzle unit 120 includes a plurality of deposition source nozzles 121 arranged at equal intervals in the X-axis direction. The deposition material 115 evaporated from the deposition source 110 is moved toward the substrate 600 through the deposition source nozzle unit 120.

The barrier plate assembly 130 will be disposed in the deposition source nozzle unit 120 closest to the substrate At one side of the 600. The barrier panel assembly 130 includes: a plurality of barrier panels 131; and a barrier panel frame 132 that covers the sides of the barrier panels 131. The plurality of barrier sheets 131 may be equally spaced in the X-axis direction in parallel with each other. Moreover, each of the barrier panels 131 can also be arranged parallel to the YZ plane in FIG. 3, that is, perpendicular to the X-axis direction. The plurality of barrier sheets 131 arranged in the manner described above divides the space between the deposition source nozzle unit 120 and the pattern slit sheet 150 into a plurality of sub-deposition spaces S (see Fig. 3). In the thin film deposition assembly 100 according to the first embodiment of the present invention, the deposition space is divided by the barrier plates 131 into sub-deposition spaces S respectively corresponding to the deposition source nozzles 121 through which the deposition material 115 passes. The deposition source nozzle 121 is released.

The barrier plates 131 may be disposed between adjacent deposition source nozzles 121, respectively. In other words, each of the deposition source nozzles 121 may be disposed between two adjacent barrier plates 131, respectively. The deposition source nozzles 121 may be located at midpoints between two adjacent barrier plates 131, respectively. As described above, since the barrier plates 131 divide the space between the deposition source nozzle unit 120 and the pattern slit sheet 150 into a plurality of sub-deposition spaces S, they are via each of the deposition source nozzles 121. The released deposition material 115 does not mix the deposition material 115 that is released via the additional deposition source nozzle 121, and the deposition material 115 passes through the pattern slits 151 to be deposited on the substrate 600. In other words, the barrier sheets 131 guide the deposition material 115 discharged through the deposition source nozzles 121 so as to move straight in the Z-axis direction without flowing in the X-axis direction.

As described above, the deposition material 115 is forced to move straight due to the installation of the barrier sheets 131. Therefore, a smaller shaded area may be formed on the substrate 600 than in the absence of any barrier sheets. on. Therefore, the thin film deposition assembly 100 and The substrates 600 are separated from each other (for example, separated by a predetermined distance). A detailed description will be given later.

The barrier frame 132 constituting the upper and lower sides of the barrier sheets 131 maintains the position of the barrier sheets 131 and guides the deposition material 115 released from the deposition source nozzles 121 such that the deposition material 115 Does not flow in the Y-axis direction. In other words, the barrier panel frame 132 in the embodiment of Fig. 1 includes two opposing barrier frame panels that are spaced apart from each other in the Y-axis direction with the barrier panels 131 disposed therebetween. Although the height of the barrier frame panels on the left side of Figure 1 appears to be smaller than the barrier frame panels on the right side; however, they may also have the same height as shown in Figure 2.

The deposition source nozzle unit 120 and the barrier plate fitting 130 shown in the drawing are separated from each other by a predetermined distance; however, the present invention is not limited thereto. To prevent heat from the deposition source 110 from being conducted to the barrier panel assembly 130, the deposition source nozzle unit 120 and the barrier panel assembly 130 may be separated from each other (for example, separated by a predetermined distance). Alternatively, if a thermal insulation plate is disposed between the deposition source nozzle unit 120 and the barrier plate assembly 130, the deposition source nozzle unit 120 and the barrier plate assembly 130 may be bonded together using the thermal insulation plate therebetween. .

Additionally, the barrier panel assembly 130 can be constructed to be removed from the film deposition assembly 100. Conventional FMM deposition techniques have low deposition efficiencies. The deposition efficiency refers to the ratio of the deposited material deposited on the substrate and the deposited material evaporated from the deposition source. This conventional FMM deposition technique has a deposition efficiency of about 32%. Furthermore, in the conventional FMM deposition technique, about 68% of the organic deposition material not deposited on the substrate still adheres to the deposition apparatus, and therefore, it is not easy to reuse the deposition material.

In order to overcome such problems, in the thin film deposition assembly 100 according to the first embodiment of the present invention, the deposition space is surrounded by using the barrier plate assembly 130, and therefore, the deposition material 115 cannot be deposited on the substrate 600. Most of the upper portion will be deposited on the barrier panel assembly 130. Therefore, since the barrier panel fitting 130 is constructed to be detachable from the film deposition fitting 100, when a large amount of deposition material 115 is attached to the barrier panel fitting 130 after a lengthy deposition process, the barrier The plate fitting 130 can be removed from the film deposition fitting 100 and placed in a separate deposition material recycling device to recover the deposition material 115. Due to the structure of the thin film deposition assembly 100 according to the first embodiment, the reuse rate of the deposition material 115 is increased, and therefore, the deposition efficiency is improved and the waste is reduced, thereby reducing the manufacturing cost.

The pattern slit sheet 150 and the frame 155 to which the pattern slit sheet 150 is bonded are disposed between the deposition source 110 and the substrate 600. The frame 155 may be formed into a grid shape, which is identical to the window frame. The pattern slit sheet 150 is bonded inside the frame 155. The pattern slit sheet 150 includes a plurality of pattern slits 151 arranged in the X-axis direction. The deposition material 115 evaporated in the deposition source 110 passes through the deposition source nozzle unit 120 and the pattern slit sheet 150 on the way to the substrate 600. The pattern slit sheet 150 can be fabricated by etching, which is the same method as that used in the conventional technique of manufacturing an FMM (specifically, a striped FMM).

In the thin film deposition assembly 100 according to the first embodiment of the present invention, the total number of pattern slits 151 may be larger than the total number of deposition source nozzles 121. Further, the number of pattern slits 151 may be larger than the deposition source nozzle 121. In other words, at least one deposition source nozzle 121 may be disposed between two adjacent barrier plates 131; however, there may be a plurality of pattern slits 151 (for example, the slits 151a and shown in FIG. 2) 151b) It is disposed between two adjacent barrier panels 131. The space between the deposition source nozzle unit 120 and the pattern slit sheet 150 is divided by the barrier sheets 131 into a plurality of sub-deposition spaces S respectively corresponding to the deposition source nozzles 121. Therefore, the deposition material 115 discharged from each of the deposition source nozzles 121 passes through a plurality of pattern slits 151 disposed in the sub-deposition space S corresponding to the deposition source nozzle 121, and then Deposited on the substrate 600.

In addition, the barrier panel assembly 130 and the pattern slit sheet 150 may also be formed to be separated from each other (for example, separated by a predetermined distance). Alternatively, the barrier panel assembly 130 and the pattern slit sheet 150 may be joined by a connecting member 135. The temperature of the barrier panel assembly 130 may increase to 100 ° C or higher due to the relationship of the deposition source 110 having a high temperature. Therefore, in order to prevent heat of the barrier panel assembly 130 from being transmitted to the pattern slit sheet 150, the barrier panel fitting 130 and the pattern slit sheet 150 are separated from each other (for example, separated by a predetermined distance).

As described above, the thin film deposition assembly 100 according to the first embodiment of the present invention performs deposition while moving relative to the substrate 600. To move the thin film deposition assembly 100 relative to the substrate 600, the pattern slit sheet 150 and the substrate 600 are separated (for example, separated by a predetermined distance). Further, when the pattern slit sheet 150 and the substrate 600 are separated from each other, in order to prevent formation of a very large shadow area on the substrate 600, the barrier sheets 131 are arranged in the deposition source nozzle unit 120 and the pattern is narrow. Between the sheets 150 is sewn to force the deposition material 115 to move in a straight direction. Therefore, the size of the shadow area that may be formed on the substrate 600 is significantly reduced.

In particular, in conventional deposition techniques using FMM, deposition is performed using an FMM in intimate contact with the substrate to prevent the formation of shadow regions on the substrate. However, when using an FMM in close contact with the substrate, the contact may cause defects. Moreover, in this conventional deposition technique, the size of the mask must be the same as the size of the substrate because the mask cannot move relative to the substrate. Therefore, as the display element becomes larger, the size of the mask must increase. However, it is not easy to make this large mask.

To overcome this problem, in the thin film deposition assembly 100 according to the first embodiment of the present invention, the pattern slit sheet 150 is disposed to be separated from the substrate 600 (for example, separated by a predetermined distance). This can be accomplished by mounting the barrier panels 131 to reduce the size of the shaded regions formed on the substrate 600.

As described above, according to an embodiment of the present invention, the mask may be formed smaller than the substrate, and deposition may be performed as the mask moves relative to the substrate. Therefore, the mask can be easily manufactured. In addition, it is possible to prevent defects caused by contact between the substrate and the FMM in the conventional deposition technique. Furthermore, since it is not necessary to arrange the FMM to be in close contact with the substrate during the deposition process, the manufacturing time can be shortened. As described above, the shaded areas formed on the substrate 600 can be reduced by mounting the barrier sheets 131. Therefore, the pattern slit sheet 150 is separated from the substrate 600.

Referring now to Figure 4, there is shown a schematic perspective view of a thin film deposition apparatus in accordance with an embodiment of the present invention. Referring to Fig. 4, a thin film deposition apparatus according to the present embodiment of the present invention includes a plurality of thin film deposition assemblies each having the structure of the thin film deposition assembly 100 shown in Figs. In other words, the thin film deposition apparatus according to the present embodiment of the present invention may include multiple deposition sources which are sequentially released for forming the blue emission layer (B), the green auxiliary layer (G'), the green emission layer (G), A red auxiliary layer (R') and a red emissive layer (R) deposition material.

Specifically, the thin film deposition apparatus according to the present embodiment of the present invention includes: a first thin film deposition assembly 100, a second thin film deposition assembly 200, a third thin film deposition assembly 300, a fourth thin film deposition assembly 400, and a fifth thin film deposition assembly 500. . Each of the first thin film deposition assembly 100, the second thin film deposition assembly 200, the third thin film deposition assembly 300, the fourth thin film deposition assembly 400, and the fifth thin film deposition assembly 500 has a film as described with reference to FIGS. The deposition fitting has the same structure and, therefore, will not be described in detail herein.

The first thin film deposition assembly 100, the second thin film deposition assembly 200, the third thin film deposition assembly 300, the fourth thin film deposition assembly 400, and the fifth thin film deposition assembly 500 may each contain different deposition materials.

For example, the first thin film deposition assembly 100 may contain a deposition material for forming a B emission layer, and the second thin film deposition assembly 200 may contain a deposition material for forming a G' auxiliary layer, the third thin film deposition assembly 300. There may be a deposition material for forming a G-emitting layer, which may contain a deposition material for forming an R' auxiliary layer, and the fifth thin film deposition assembly 500 may contain a deposition for forming an R-emitting layer. material.

Or not shown in FIG. 4, the first thin film deposition assembly 100 may contain a deposition material for forming a B emission layer, and the second thin film deposition assembly 200 may contain a deposition material for forming an R' auxiliary layer. The third thin film deposition assembly 300 may contain a deposition material for forming an R emission layer, which may contain a deposition material for forming a G' auxiliary layer, and the fifth thin film deposition assembly 500 may contain A deposition material of the G emission layer is formed.

According to the above structure, the G' auxiliary layer (see 62G' of Fig. 5A) is set at The B emission layer (see 62B of FIG. 5A) and the G emission layer (see 62G of FIG. 5A) are disposed, and the R' auxiliary layer (see 62R' of FIG. 5A) is disposed on the G emission layer (see Between 62G) of FIG. 5A and the R emission layer (see 62R of FIG. 5A). Alternatively, as shown in FIG. 5B, the R' auxiliary layer may be disposed between the B emission layer and the R emission layer, and the G' auxiliary layer may be disposed at the G emission layer and the R emission Between the layers. That is, since the intermediate layer is disposed between two adjacent emission layers, the two adjacent emission layers do not contact each other. This will be described in detail later with reference to FIG. 5A.

Here, a deposition material for forming an R' auxiliary layer and a G' auxiliary layer, a deposition material for forming an R emission layer, a deposition material for forming a G emission layer, and a deposition material for forming a B emission layer may be Evaporate at different temperatures from each other. Therefore, the temperatures of the deposition sources 110, 210, 310, 410, and 510 of the individual first, second, third, fourth, and fifth thin film deposition assemblies 100, 200, 300, 400, and 500 can be set to no the same.

The thin film deposition apparatus according to the present embodiment of the present invention contains five thin film deposition fittings; however, the present invention is not limited thereto. In other words, a thin film deposition apparatus according to another embodiment of the present invention may include a plurality of thin film deposition assemblies each containing a different deposition material.

As described above, a plurality of films can be simultaneously formed using a plurality of film deposition fittings, and thus the manufacturing yield and deposition efficiency are improved. In addition, the overall process will be simplified and manufacturing costs will be reduced.

The organic layer of the organic light emitting display element (see the organic layer 62 of FIG. 5A) including the emission layer can be formed using the thin film deposition apparatus having the above structure. According to the invention A method of fabricating an organic light emitting display device according to an embodiment may include: arranging the substrate 600 to be separated from the thin film deposition device (for example, separating a predetermined distance); and comparing the thin film deposition device or the substrate 600 to the substrate While the other is moving, the deposited material released from the thin film deposition apparatus is deposited. The details will be described below.

Initially, the substrate 600 will be arranged to be separated from the thin film deposition apparatus (for example, separated by a predetermined distance). As described above, the thin film deposition apparatus according to an embodiment of the present invention may include pattern slit sheets 150, 250, 350, 450, and 550, each of which is smaller than the substrate 600, and thus can be manufactured very easily. Thus, deposition can be performed while either or both of the thin film deposition apparatus and the substrate 600 are moved relative to the other. In other words, the deposition can be continuously performed while the substrate 600 (which is arranged in a direction opposite to the thin film deposition apparatus) moves in the Y-axis direction. In other words, the deposition is performed in a scanning manner while the substrate 600 is moving in the direction of the arrow B in FIG. Further, the thin film deposition apparatus and the substrate 600 must be separated from each other (for example, separated by a predetermined distance) to move the thin film deposition apparatus or the substrate 600 relative to the other. For this reason, the substrate 600 is arranged in a reaction chamber (not shown) and separated from the thin film deposition apparatus (for example, separated by a predetermined distance).

Next, when the thin film deposition apparatus or the substrate 600 is moved relative to the other, the deposition material released from the thin film deposition apparatus is deposited on the substrate 600. As described above, the thin film deposition apparatus according to an embodiment of the present invention may include pattern slit sheets 150, 250, 350, 450, and 550, each of which is smaller than the substrate 600, and thus can be manufactured very easily. Therefore, deposition can be performed when the thin film deposition apparatus or the substrate 600 is moved relative to the other. 1 to 4 show that the substrate 600 moves in the Y-axis direction when the thin film deposition apparatus is fixed; However, the invention is not limited thereto. For example, instead of the system, the substrate 600 may be fixed and the thin film deposition apparatus may move relative to the substrate 600.

The thin film deposition apparatus for carrying out the method of manufacturing an organic light emitting display element according to the present embodiment of the present invention may comprise multiple deposition sources which are sequentially released for forming a B emission layer, a G' auxiliary layer, a G emission layer, and R 'Second layer and deposition material of the R emissive layer. Therefore, a plurality of organic layers can be formed at the same time. That is, the thin film deposition apparatus for carrying out the method may include a plurality of thin film deposition assemblies such that the B emission layer (see 62B of FIG. 5A), the G' auxiliary layer (see 62G' of FIG. 5A), the G The emissive layer (see 62G of FIG. 5A), the R' auxiliary layer (see 62R' of FIG. 5A), and the R emissive layer (see 62R of FIG. 5A) can be formed at the same time using a single multiple deposition source. Therefore, the time taken to manufacture the organic light-emitting display element is significantly reduced, and the equipment cost is also greatly reduced because fewer reaction chambers are required.

The organic layer 62 of the organic light emitting display element which will be described later can be fabricated by the thin film deposition apparatus. Further, the thin film deposition apparatus according to the present embodiment can also be used to form an organic layer or an inorganic layer among organic thin film transistors, and a wide variety of films can be formed by using various materials.

The organic light-emitting display element manufactured by using the thin film deposition apparatus of FIG. 4 will be described in detail below.

Referring now to FIGS. 5A and 5B, FIGS. 5A and 5B are cross-sectional views of a pixel of an organic light emitting display element fabricated by using the thin film deposition apparatus of FIG. 4. The pixels of Figure 5B are substantially identical to the map except that the positions of the red and green sub-pixels are interchanged. 5A pixels. Therefore, the following description mainly refers to FIG. 5A. Referring to FIG. 5A, the buffer layer 51 is formed over the substrate 50 made of glass or plastic. A Thin Film Transistor (TFT) and an Organic Light Emitting Diode (OLED) are formed on the buffer layer 51.

An active layer 52 having a predetermined pattern is formed over the buffer layer 51. A gate insulating layer 53 is formed over the active layer 52, and a gate electrode 54 is formed in a predetermined region of the gate insulating layer 53. The gate electrode 54 is connected to a gate line (not shown) that applies a TFT ON/OFF signal. An interlayer insulating layer 55 is formed over the gate electrode 54. Source/drain electrodes 56 and 57 are formed to contact source/drain regions 52b and 52c of active layer 52 via contact holes, respectively. A passivation layer 58 made of SiO2, SiNx or the like is formed over the source/drain electrodes 56 and 57. A planarization layer 59 made of an organic material such as propylene, polyamine, BCB or the like is formed over the passivation layer 58. A first electrode 61 (which functions as an anode of the OLED) is formed over the planarization layer 59, and a pixel definition layer 60 made of an organic material is formed over the first electrode 61. An opening may be formed in the pixel defining layer 60, and an organic layer 62 is formed on the surface of the pixel defining layer 60 and on the surface of the first electrode 61 exposed through the opening. The organic layer 62 comprises an emissive layer. The present invention is not limited to the structure of the above-described organic light-emitting display element, and various structures of the organic light-emitting display element can be applied to the embodiments of the invention described herein.

When the current flows, the OLED displays the preset image information by emitting red, green or blue light. The OLED comprises: the first electrode 61, which is connected to the drain electrode 56 of the TFT and a positive power voltage is applied thereto; the second electrode 63, which is formed to cover the entire sub-pixel and has a negative power Voltage will be applied to this And the organic layer 62, which is disposed between the first electrode 61 and the second electrode 63 for emitting light. The first electrode 61 and the second electrode 63 are insulated from each other by the organic layer 62, and voltages of opposite polarities are respectively applied to the organic layer 62 to induce luminescence in the organic layer 62.

The organic layer 62 may comprise a low molecular weight organic layer or a high molecular weight organic material. When a low molecular weight organic layer is used, the organic layer 62 may have a single layer structure or a multilayer structure including at least one of the groups selected from the following: Hole Injection Layer (HIL), electricity Hole Transport Layer (HTL), Emission Layer (EML), Electro Transport Layer (ETL), and Electron Injection Layer (EIL). Examples of useful organic materials may include: copper phthalocyanine (CuPc), N, N'-bis(naphthalen-1-yl)-N, N'-diphenylbenzidine (N, N'-di (naphthalene- 1-yl)-N,N'-diphenyl-benzidine, NPB), tris(8-hydroxyquinoline)aluminum, Alq3) and the like. The low molecular weight organic layer can be formed by vacuum deposition. When a high molecular weight organic layer is included, the organic layer 62 may mostly have a structure comprising HTL and EML. In this case, the HTL may be made of poly(ethylenedioxythiophene, PEDOT), and the EML may be composed of polyphenylenevinylene (PPV) or polyfluorene (PPV). Made from polyfluorene). The HTL and the EML can be constructed by screen printing, inkjet printing, or the like. The organic layer 62 is not limited to the organic layer described above, and may be present in various other ways and still fall within the scope of the present invention.

The function of the first electrode 61 may be the same anode, and the function of the second electrode 63 may be Can be like the same cathode. Alternatively, the first electrode 61 may function as the same cathode, and the second electrode 63 may function as the same anode.

The first electrode 61 may be a transparent electrode or a reflective electrode. The transparent electrode may be made of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium oxide (In2O3). The reflective electrode may be made of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), niobium (Nd), niobium (Ir). ), chromium (Cr) or a compound thereof first forms a reflective layer and then forms a layer of ITO, IZO, ZnO or In2O3 over the reflective layer.

The second electrode 63 may be formed as a transparent electrode or a reflective electrode. When the second electrode 63 is formed as a transparent electrode, the second electrode 63 functions as the same cathode. To this end, the transparent electrode can be formed by depositing a metal having a low work function on the surface of the organic layer 62, for example, lithium (Li), calcium (Ca), lithium fluoride/calcium ( LiF/Ca), lithium fluoride/aluminum (LiF/Al), aluminum (Al), silver (Ag), magnesium (Mg) or a compound thereof; and a material formed of a transparent electrode (for example, ITO, IZO, ZnO) , In 2 O 3 or the like) on which the auxiliary electrode layer or the bus bar electrode line is formed. When the second electrode 63 is formed as a reflective electrode, the reflective layer can deposit Li, Ca, LiF/Ca, LiF/Al, Al, Ag, Mg or a compound thereof on the entire surface of the organic layer 62. To form.

In the above organic light-emitting display device, the organic layer 62 including the emission layer can be formed by the thin film deposition apparatus 100 (see FIG. 1) described above. In more detail, the organic layer 62 may include emissive layers 62R, 62G, 62B and auxiliary layers 62R' and 62G'. According to the deposition material used herein, the emission layers 62R, 62G, 62B may emit light of red (R), green (G), and blue (B), respectively. On the other hand, the auxiliary layers 62R' and 62G' are made of the same material constituting the HTL. It is produced that intermediate layers including the auxiliary layers 62R' and 62G' may be formed in R sub-pixels, G sub-pixels, and B sub-pixels that respectively emit red, green, and blue light. It will now be explained in detail below.

One of the first electrode 61 and the second electrode 63 is a reflective electrode, and the other is a translucent electrode or a transparent electrode. Therefore, when the OLED is driven, resonance may occur between the first electrode 61 and the second electrode 63. According to this, when the organic light emitting display element is driven, light emitted from the emission layers 62R, 62G, and 62B between the first electrode 61 and the second electrode 63 is at the first electrodes 61 and The two electrodes 63 resonate between each other and are emitted from the organic light emitting display element. Therefore, the illuminance and the luminous efficiency can be improved. In order to form a resonance structure, among the organic light-emitting display elements fabricated using the thin film deposition apparatus according to the present embodiment, R sub-pixels, G sub-pixels, and B sub-pixels respectively emitting red light, green light, and blue light The intermediate layers containing the auxiliary layers 62R' and 62G' may have different thicknesses. That is, since the thicknesses of the auxiliary layers 62R' and 62G' disposed in the organic layer 62 between the first electrode 61 and the second electrode 63 are optimized according to the emitted color of the emission layer. (Or optimal), so you can achieve excellent drive voltage, high current density, high emission, high color purity, high emission efficiency and better life characteristics.

Among a typical organic light emitting display element, the auxiliary layers 62R' and 62G' are usually formed on the first electrode 61 first, and then, the R emitting layer 62R, the G emitting layer 62G, and the like B emission layer 62B is sequentially formed over the auxiliary layers. However, when the substrate and the pattern slit sheet are separated from each other as in the thin film deposition apparatus for forming an organic light-emitting display element according to the present embodiment, there is still a chance that a shadow area is generated on the substrate, but the chance is small . When the shadow area is generated Moreover, when the adjacent emission layers are mixed, the luminous efficiency is deteriorated and the driving voltage is increased.

That is, as shown in Table 1 below, the external quantum efficiency (EQE) of the B emission layer 62B in the normal state (that is, when there is no overlapping region) is 6.29%. However, when only 1% of the R emission layer 62R or the G emission layer 62G overlaps the B emission layer 62B, the external quantum efficiency of the B emission layer 62B drops sharply to 1.53% or 2.76%.

In order to solve the above problem, among the organic light emitting display elements according to the present embodiment, sub-pixels among one pixel are arranged in the order of B sub-pixels, G sub-pixels, and R sub-pixels, the G' auxiliary layer 62G An end portion of 'and an end portion of the G emissive layer 62G may overlap an end portion of the B emissive layer 62B, and an end portion of the R' auxiliary layer 62R' and an end portion of the R emissive layer 62R may The other end portion of the G emission layer 62G is overlapped.

As described above, the first thin film deposition assembly 100 (see FIG. 4) contains a deposition material for forming the B emission layer 62B, and the second thin film deposition assembly 200 (see FIG. 4) contains for forming the G' auxiliary a deposition material of layer 62G', the third thin film deposition assembly 300 (see FIG. 4) containing a deposition material for forming the G emission layer 62G, the fourth thin film deposition assembly 400 (see FIG. 4) containing for forming the R Deposition of 'auxiliary layer 62R' The material, and the fifth thin film deposition assembly 500 (see FIG. 4) contains a deposition material for forming the R emission layer 62R.

In this case, the B emission layer 62B is formed first, and then the G' auxiliary layer 62G' is formed. Here, the right end of the B emission layer 62B and the left end of the G' auxiliary layer 62G' have some overlap with each other, and then, the left end of the G' auxiliary layer 62G' is disposed at the B emission layer 62B. Above the right end. Next, the G emission layer 62G is formed over the G' auxiliary layer 62G'. That is, since the G' auxiliary layer 62G' is disposed between the B emission layer 62B and the G emission layer 62G, the adjacent B emission layer 62B and the G emission layer 62G do not directly contact each other.

Next, the R' auxiliary layer 62R' is formed. At this time, the right end of the G emission layer 62G and the left end of the R' auxiliary layer 62R' have a certain degree of overlap with each other, and then, the left end of the R' auxiliary layer 62R' is disposed at the G emission layer 62G. Above the right end. Then, the R emission layer 62R is formed over the R' auxiliary layer 62R'. That is, since the R' auxiliary layer 62R' is disposed between the G emission layer 62G and the R emission layer 62R, the G emission layer 62G and the R emission layer 62R adjacent to each other do not directly contact each other. .

As shown in Table 2, the external quantum efficiency of the B emission layer 62B in the normal state (that is, when there is no overlapping region) was 6.29%. Further, when the R' auxiliary layer 62R' and the R emission layer 62R overlap each other by about 1%, the external quantum efficiency is 5.78%; and when the G' auxiliary layer 62G' and the G emission layer 62G overlap each other by about 1 At %, the external quantum efficiency is 5.42%. That is, compared with Table 1 in which the intermediate auxiliary layers are not disposed between the adjacent emission layers, the luminous efficiency of the light-emitting layer is greatly improved, color mixing does not occur, and the color coordinates are reproduced. Will be improved.

Alternatively, although not shown in the drawings; however, the first thin film deposition assembly 100 may contain a deposition material for forming the B emission layer, and the second thin film deposition assembly 200 may contain a deposition for forming the R' auxiliary layer. Materials, the third thin film deposition assembly 300 may contain a deposition material for forming the R emission layer, the fourth thin film deposition assembly 400 may contain a deposition material for forming the G' auxiliary layer, and the fifth thin film deposition assembly 500 may contain a deposition material for forming the G emissive layer.

In this case, the B emitter layer will be formed first, and then the R' auxiliary layer will be formed. Here, the right end of the B emission layer and the left end of the R' auxiliary layer have some overlap with each other, and then, the left end of the R' auxiliary layer is disposed above the right end of the B emission layer. Next, the R emissive layer will be formed over the R' auxiliary layer. That is, the R' auxiliary layer is disposed between the B emission layer and the R emission layer, and therefore, the adjacent B emission layer and R emission layer do not directly contact each other.

Next, the G' auxiliary layer is formed. Here, the right end of the R emission layer and the left end of the G' auxiliary layer overlap to each other to some extent, and then, the left end of the G' auxiliary layer is disposed above the right end of the R emission layer. Then, a G emission layer is formed over the G' auxiliary layer. That is, since the G' auxiliary layer is disposed between the R emission layer and the G emission layer, the adjacent R emission layer and G emission layer are not Will directly contact each other.

According to the present embodiment, color mixing deterioration and color mixing due to the overlapping relationship of adjacent emission layers can be reduced.

Referring now to Figure 6, there is shown a schematic perspective view of a thin film deposition assembly 700 in accordance with a second embodiment of the present invention. Referring to FIG. 6, a thin film deposition assembly 700 according to a second embodiment of the present invention includes a deposition source 710, a deposition source nozzle unit 720, a first barrier plate assembly 730, a second barrier plate assembly 740, and a pattern slit sheet 750 for A deposition material is deposited over the substrate 600.

For ease of explanation, the reaction chamber is not shown in Figure 6; however, all of the components of the film deposition assembly 700 may be placed in a reaction chamber maintained at a suitable vacuum level. The reaction chamber will remain at a suitable vacuum to allow the deposited material to move through the thin film deposition assembly 700 in a substantially straight line.

A substrate 600 is disposed in the reaction chamber, which constitutes a deposition target on which the deposition material 715 is to be deposited. A deposition source 710 containing and heating the deposition material 715 is disposed on the opposite side of the reaction chamber where the side of the substrate 600 is disposed. The deposition source 710 may include a crucible 711 and a heater 712.

The deposition source nozzle unit 720 is disposed at a side of the deposition source 110 facing the substrate 600. The deposition source nozzle unit 720 includes a plurality of deposition source nozzles 721 arranged at equal intervals in the X-axis direction.

The first barrier panel fitting 730 will be disposed at one side of the deposition source nozzle unit 720. The first barrier panel assembly 730 includes: a plurality of first barrier panels 731; and a first barrier panel frame 732 that covers the sides of the first barrier panels 731. The first barrier panel frame 732 of the embodiment of Figure 6 includes two opposing first barrier frame panels, They are spaced apart from each other in the Y-axis direction with the first barrier plates 731 disposed therebetween. Although the height of the barrier frame panels on the left side of Figure 6 appears to be smaller than the barrier frame panels on the right side; however, they may also have the same height.

The second barrier panel fitting 740 will be disposed at one side of the first barrier panel fitting 730. The second barrier panel assembly 740 includes a plurality of second barrier panels 741 and a second barrier panel frame 742 that covers the sides of the second barrier panels 741.

The pattern slit sheet 750 and the frame 755 to which the pattern slit sheet 750 is bonded are disposed between the deposition source 710 and the substrate 600. The frame 755 may be formed into a grid shape, which is identical to the window frame. The pattern slit sheet 750 includes a plurality of pattern slits 751 arranged in the X-axis direction, and the pattern slits 751 extend in the Y-axis direction.

The thin film deposition assembly 700 according to the second embodiment of the present invention includes two separate barrier panel fittings, that is, a first barrier panel fitting 730 and a second barrier panel fitting 740.

The plurality of first barrier plates 731 may be equally spaced in the X-axis direction in parallel with each other. In addition, each of the first barrier panels 731 can also be formed to extend in a YZ plane in FIG. 10, that is, perpendicular to the X-axis direction.

The plurality of second barrier sheets 741 may be equally spaced in the X-axis direction in parallel with each other. In addition, each of the second barrier panels 741 can also be formed to extend parallel to the YZ plane in FIG. 10, that is, perpendicular to the X-axis direction.

The plurality of first barrier sheets 731 and the plurality of second barrier sheets 741 arranged as described above divide the space between the deposition source nozzle unit 720 and the pattern slit sheet 750. In the thin film deposition assembly 700 according to the second embodiment of the present invention, the deposition space is divided by the plurality of first barrier plates 731 and the plurality of second screens The baffle 741 is divided into a plurality of sub-deposition spaces respectively corresponding to the deposition source nozzles 721 from which the deposition material 715 is released.

The second barrier panels 741 may be arranged to correspond to the first barrier panels 731, respectively. In other words, the second barrier panels 741 may be disposed parallel to the first barrier panels 731 and in the same plane as the first barrier panels 731, respectively. Each of the corresponding first barrier panels 731 and the plurality of second barrier panels 741 may be located on the same plane. As described above, since the space between the deposition source nozzle unit 720 and the pattern slit sheet 750 (to be described later) may be disposed in parallel with each other, the first barrier sheets 731 and the second barrier sheets The 741 is divided, so the deposition material 715 discharged through one of the deposition source nozzles 721 does not mix the deposition material 715 released through the other deposition source nozzle 721, and the slits through the pattern are passed. 751 is deposited on the substrate 600. In other words, the first barrier plates 731 and the second barrier plates 741 guide the deposition material 715 released through the deposition source nozzles 721 and prevent the deposition material 715 from flowing in the X-axis direction.

The first barrier sheets 731 and the second barrier sheets 741 shown in Fig. 6 have the same thickness in the X-axis direction, respectively; however, the invention is not limited thereto. In other words, the second barrier sheets 741 that need to be precisely aligned with the pattern slit sheet 750 may be formed relatively thin; the first barrier sheets 731 that do not need to be precisely aligned with the pattern slit sheet 750 may be formed. Thicker. This makes it easier to manufacture the film deposition fitting.

Although not shown in the drawings; however, the thin film deposition apparatus according to the second embodiment of the present invention may also include a plurality of thin film deposition fittings as shown in FIG. 4, each of which has the same as shown in FIG. structure. In other words, according to the second aspect of the invention The thin film deposition apparatus of the embodiment may include multiple deposition sources which are sequentially released for forming a blue emission layer (B), a green auxiliary layer (G'), a green emission layer (G), and a red auxiliary layer (R' And the deposition material of the red emission layer (R). The deposition is performed in a scanning manner as the substrate 600 moves in the direction of arrow C in FIG. Since the plurality of film deposition fittings have been described in detail in the first embodiment, a detailed description thereof will not be provided herein.

Referring now to FIGS. 7 through 9, FIG. 7 is a schematic perspective view of a thin film deposition assembly 1100 according to a third embodiment of the present invention; and FIG. 8 is a schematic cross-sectional view of the thin film deposition assembly 1100 shown in FIG. While FIG. 9 is a schematic plan view of the thin film deposition assembly 1100 shown in FIG. Referring to FIGS. 7, 8, and 9, a thin film deposition assembly 1100 according to a third embodiment of the present invention includes a deposition source 1110, a deposition source nozzle unit 1120, and a pattern slit sheet 1150.

For ease of explanation, a reaction chamber is not shown in Figures 7, 8, and 9; however, all of the components of the film deposition assembly 1100 may be disposed within a reaction chamber maintained at a suitable vacuum level. The reaction chamber will be maintained at a suitable vacuum to allow the deposited material to move through the thin film deposition assembly 1100 in a substantially straight line.

A substrate 600 is disposed in the reaction chamber, which constitutes a deposition target on which the deposition material 1115 is to be deposited. The deposition source 1110 is disposed on a reverse side of the reaction chamber in which the side of the substrate 600 is disposed. The deposition source 1110 contains a crucible 1111 and a heater 1112 and heats the deposition material 1115.

The deposition source nozzle unit 1120 is disposed at one side of the deposition source 1110, specifically, it is disposed at a side of the deposition source 1110 facing the substrate 600 . The deposition source nozzle unit 1120 includes a plurality of deposition source nozzles 1121 arranged at equal intervals in the Y-axis direction (that is, the scanning direction of the substrate 600). The deposition material 1115 evaporated in the deposition source 1110 passes through the deposition source nozzle unit 1120 toward the substrate 600. As described above, when the deposition source nozzle unit 1120 includes the plurality of deposition source nozzles 1121 arranged in the Y-axis direction (that is, the scanning direction of the substrate 600), the slit sheet 1150 is passed through the pattern. The size of the pattern made by the deposited material of the pattern slit 1151 is affected by the size of one of the deposition source nozzles 1121 (because there is only one row of deposition nozzles in the Y-axis direction), Moreover, any shadow regions may not be formed on the substrate 600. In addition, since the plurality of deposition source nozzles 1121 are arranged in the scanning direction of the substrate 600, even if the flow rates between the deposition source nozzles 1121 are different, the difference can be compensated and the deposition uniformity can be keep constant.

The pattern slit sheet 1150 and the frame 1155 to which the pattern slit sheet 1150 is bonded are disposed between the deposition source 1110 and the substrate 600. The frame 1155 may be formed into a grid shape, which is identical to the window frame. The pattern slit sheet 1150 is bonded inside the frame 1155. The pattern slit sheet 1150 includes a plurality of pattern slits 1151 arranged in the X-axis direction, each of which has a plurality of openings extending in the Y-axis direction. The deposition material 1115 evaporated in the deposition source 1110 passes through the deposition source nozzle unit 1120 and the pattern slit sheet 1150 toward the substrate 600. The pattern slit sheet 1150 can be fabricated by etching, which is the same technique as that used in the conventional technique of manufacturing an FMM (specifically, a striped FMM).

Furthermore, the deposition source 1110 and the deposition source nozzle unit 1120 coupled to the deposition source 1110 may be disposed to be separated from the pattern slit sheet 1150 (for example, separated by a predetermined distance). Alternatively, the deposition source 1110 is coupled to the deposition source 1110 The deposition source nozzle unit 1120 may be connected by the connecting member 1135. That is, the deposition source 1110, the deposition source nozzle unit 1120, and the pattern slit sheet 1150 are integrally connected to each other to form a single body through the connecting member 1135. The connecting member 1135 guides the deposition material 1115 released through the deposition source nozzles 1121 so as to move straight in the Z-axis direction without flowing in the X-axis direction. In FIG. 7, the connecting members 1135 are formed on the left and right sides of the deposition source 1110. The connecting member 1135, the deposition source nozzle unit 1120, and the pattern slit sheet 1150 guide the deposition material 1115 to prevent the deposition material 1115 from flowing in the X-axis direction; however, the present invention is not limited thereto. That is, the connecting member 1135 can also be formed into a sealed case for restricting the deposition material 1115 from flowing in both the X-axis and the Y-axis.

As described above, the thin film deposition assembly 1100 according to the third embodiment of the present invention performs deposition while moving relative to the substrate 600. To move the film deposition assembly 1100 relative to the substrate 600, the pattern slit sheet 1150 must be spaced apart from the substrate 600 (for example, by a predetermined distance).

As described above, in accordance with an embodiment of the present invention, the mask will be formed smaller than the substrate, and deposition will be performed as the mask moves relative to the substrate. Therefore, the mask can be easily manufactured. In addition, it is possible to prevent defects caused by contact between the substrate and the FMM in the conventional deposition technique. Furthermore, since it is not necessary to arrange the FMM to be in close contact with the substrate during the deposition process, the manufacturing time can be shortened.

Although not shown in the drawings, the thin film deposition apparatus according to the third embodiment of the present invention may also include a plurality of thin film deposition fittings as shown in FIG. 4, each of which has the characteristics of FIGS. 7 to 9. The structure shown. In other words, according to the present invention The thin film deposition apparatus of the third embodiment may include multiple deposition sources which are sequentially released for forming a blue emission layer (B), a green auxiliary layer (G'), a green emission layer (G), and a red auxiliary layer (R). ') and the deposition material of the red emission layer (R). The deposition is performed in a scanning manner as the substrate 600 moves in the direction of arrow A in FIG. Since the plurality of film deposition fittings have been described in detail in the first embodiment, a detailed description thereof will not be provided herein.

Referring now to Figure 10, there is shown a schematic perspective view of a thin film deposition assembly 1200 in accordance with a fourth embodiment of the present invention. Referring to FIG. 10, a thin film deposition assembly 1200 according to the present embodiment of the present invention includes a deposition source 1210, a deposition source nozzle unit 1220, and a pattern slit sheet 1250. Specifically, the deposition source 1210 includes a crucible 1211 filled with the deposition material 1215, and a heater 1212 that heats the crucible 1211 for evaporating the deposition material 1215 contained in the crucible 1211. The evaporated deposition material 1215 is moved to the deposition source nozzle unit 1220. A deposition source nozzle unit 1220 having a planar shape is disposed at a side of the deposition source 1210 closest to the substrate 600. The deposition source nozzle unit 1220 includes a plurality of deposition source nozzles 1221 arranged in the Y-axis direction. The pattern slit sheet 1250 and the frame 1255 are further disposed between the deposition source 1210 and the substrate 600. The pattern slit sheet 1250 includes a plurality of pattern slits 1251 arranged in the X-axis direction, each of which extends in the Y-axis direction. Further, the deposition source 1210 and the deposition source nozzle unit 1220 may also be connected to the pattern slit sheet 1250 by the connecting member 1235.

In the fourth embodiment and in addition to the third embodiment of FIGS. 7, 8, and 9, the plurality of deposition source nozzles 1221 formed in the deposition source nozzle unit 1220 are tilted (for example, tilt presets) Angle). Specifically, the deposition source nozzles 1221 There may be deposition source nozzles 1221a and 1221b arranged in a plurality of columns. The deposition source nozzles 1221a and 1221b may be staggered in individual columns in a zigzag pattern. The deposition source nozzles 1221a and 1221b may be inclined at a predetermined angle with the YZ plane.

The deposition source nozzles 1221a of the first column and the deposition source nozzles 1221b of the second column may be inclined to each other. That is, the deposition source nozzles 1221a of the first column among the left portions of the deposition source nozzle unit 1220 may be inclined to face the right portion of the pattern slit sheet 1250, and the right portion of the deposition source nozzle unit 1220. The deposition source nozzles 1221b of the second column may be inclined to face the left side portion of the pattern slit sheet 1250.

Referring now to Figures 11 and 12, shown in Figure 11 is a deposition formed on substrate 600 when the deposition source nozzles 1221a and 1221b are not tilted within the thin film deposition assembly 1200, in accordance with the present embodiment of the present invention. The distribution relationship diagram of the film; and FIG. 12 is a distribution diagram of the deposited film formed on the substrate 600 when the deposition source nozzles 1221a and 1221b are tilted in the thin film deposition assembly 1200. Comparing the relationship diagrams of Figs. 11 and 12, the thickness of the deposited film formed on the opposite end portions of the substrate 600 when the deposition source nozzles 1221a and 1221b are inclined may be greater than when the deposition source nozzles 1221a and 1221b are not The thickness of the deposited film formed on the substrate 600 when tilted, and thus, the uniformity of the deposited film is improved.

Due to the structure of the thin film deposition assembly 1200 according to the fourth embodiment, the deposition of the deposition material 1215 can be adjusted to reduce the thickness variation between the center of the substrate 600 and the end portions, and to improve the deposited film. Evenness. Furthermore, the efficiency of use of the deposited material 1215 can also be improved.

As described above, among the thin film deposition apparatuses according to the embodiments of the present invention, among the methods of manufacturing the organic light-emitting display element according to the embodiment of the present invention using the thin film deposition apparatus, and the use of the technology Among the organic light-emitting display elements, the thin film deposition apparatus can be directly used for mass production of large-sized display elements. Further, the thin film deposition apparatus and the organic light emitting display element can be easily fabricated, and the manufacturing yield and deposition efficiency can be improved.

Instead of using a single fine metal mask (FMM) to create the deposited pattern, a pattern slit sheet that is smaller than the substrate is used during deposition. Therefore, in a large display, it is no longer necessary to use a very large FMM. Multiple layers of deposition can be deposited in a single deposition step by moving many deposition sources together. It may further comprise a plurality of auxiliary layers to prevent one or more color emissive layers from directly contacting the additional color emissive layer. It is possible to further include a plurality of barrier sheets between the pattern slit sheet and the deposition source for guiding the evaporated deposition material while recovering the deposition material without deposition. The nozzles may be arranged in parallel or perpendicular to the slits in the pattern slit sheet. The nozzles may be further formed in two columns, with the nozzles in each column tilting toward the other column to produce a more uniform deposited film.

The manner in which the overall system of the thin film deposition apparatus including the plurality of thin film deposition assemblies of FIG. 4 is constructed will be described in detail below.

Figure 13 is a schematic view of a thin film deposition apparatus according to an embodiment of the present invention. Fig. 14 shows a modified example of the thin film deposition apparatus of Fig. 13. Figure 15 is a view of an example of an electrostatic chuck 800 in accordance with an embodiment of the present invention.

Referring to FIG. 13, the thin film deposition apparatus includes: a loading unit 910; a deposition unit 930; The unloading unit 920; the first transport unit 810; and the second transport unit 820. The loading unit 910 may include a first shelf 912, a transport robot 914, a transport reaction chamber 916, and a first reverse reaction chamber 918.

A plurality of substrates 600 on which no deposition material is applied are stacked on the first shelf 912. The transport robot 914 picks up one of the substrates 600 from the first rack 912, places the substrate 600 on the electrostatic chuck 800 transported by the second transport unit 820, and The electrostatic chuck 800 on which the substrate 600 is placed is moved into the transport reaction chamber 916.

The first reverse reaction chamber 918 is disposed beside the transport reaction chamber 916. The first reverse reaction chamber 918 includes a first reverse robot 919 that reverses the electrostatic chuck 800 and then loads it into the first transport unit 810 of the deposition unit 930.

Referring to Figure 15, the electrostatic chuck 800 may include an electrode 802 embedded in a body 801 made of ceramic, wherein the electrode 802 is powered. When a high voltage is applied to the electrode 802, the substrate 600 may be fixed to a surface of the body 801 of the electrostatic chuck 800.

Referring to FIG. 13, the transport robot 914 places one of the substrates 600 on the surface of the electrostatic chuck 800, and the electrostatic chuck 800 on which the substrate 600 is disposed is moved into the transport. In the reaction chamber 916. The first reverse robot 919 reverses the electrostatic chuck 800 so that the substrate 600 will flip up and down in the deposition unit 930. The unloading unit 920 will continue to operate in the opposite manner to the loading unit 910 described above. Specifically, the second reverse robot 929 in the second reverse reaction chamber 928 reverses the electrostatic chuck 800, which will be on the substrate. The 600 is passed through the deposition unit 930 while being placed over the electrostatic chuck 800, and then the electrostatic chuck 800 on which the substrate 600 is placed is moved into the reaction chamber 926. Next, the shooting robot 924 removes the electrostatic chuck 800 on which the substrate 600 is disposed from the ejection reaction chamber 926, separates the substrate 600 and the electrostatic chuck 800, and then loads the substrate 600 in the second In the shelf 922. The electrostatic chuck 800 separated from the substrate 600 is returned to the loading unit 910 through the second transport unit 820. However, the opinions of the present invention are not limited to the above description. For example, when the substrate 600 is disposed on the electrostatic chuck 800, the substrate 600 can be fixed to the bottom surface of the electrostatic chuck 800 and then moved into the deposition unit 930. In this case, for example, the first reverse reaction chamber 918 and the first reverse automatic robot 919 and the second reverse reaction chamber 928 and the second reverse automatic robot 929 are not required.

The deposition unit 930 may include at least one deposition reaction chamber. As shown in FIG. 13, the deposition unit 930 may include a first reaction chamber 931. In this case, the first to fourth thin film deposition assemblies 100, 200, 300, and 400 may be disposed in the first reaction chamber 931. Figure 13 shows that there are a total of four thin film deposition fittings, that is, the first to fourth thin film deposition fittings 100 to 400 are installed in the first reaction chamber 931; however, it may be installed at the first The total number of thin film deposition fittings in the reaction chamber 931 may vary depending on the deposition material and deposition conditions. The first reaction chamber 931 will remain in a vacuum state during the deposition process.

In the thin film deposition apparatus shown in FIG. 14, the deposition unit 930 may include a first reaction chamber 931 and a second reaction chamber 932 which are connected to each other. In this case, the first thin film deposition assembly 100 and the second thin film deposition assembly 200 may be disposed in the first reaction chamber 931, and the third thin film deposition assembly 300 and the fourth thin film deposition assembly 400 It may be placed in the second reaction chamber 932. In this regard, additional reaction chambers may be added.

In the embodiment shown in FIG. 13, the electrostatic chuck 800 on which the substrate 600 is disposed may be moved by the first transport unit 810 to at least the deposition unit 930, or may be sequentially moved to the A loading unit 910, the deposition unit 930, and the unloading unit 920. The electrostatic chuck 800 separated from the substrate 600 in the unloading unit 920 is returned to the loading unit 910 by the second transport unit 820.

Although the invention has been particularly shown and described with reference to the exemplary embodiments of the present invention, it will be understood by those skilled in the art And the spirit and scope of the invention as defined by their equivalent scope.

100‧‧‧film deposition accessories

110‧‧‧Sedimentary source

111‧‧‧ Shabu Shabu

112‧‧‧heater

115‧‧‧Deposited materials

120‧‧‧Secondary source nozzle unit

121‧‧‧Sediment source nozzle

130‧‧‧Barrier plate accessories

131‧‧‧Barrier board

132‧‧‧Barrier frame

135‧‧‧Connecting parts

150‧‧‧pattern slit sheet

151‧‧‧ pattern slit

155‧‧‧Frame

200‧‧‧film deposition accessories

210‧‧‧Sedimentary source

215‧‧‧deposited materials

250‧‧‧pattern slit sheet

300‧‧‧film deposition accessories

310‧‧‧Sedimentary source

315‧‧‧deposited materials

350‧‧‧pattern slit sheet

400‧‧‧film deposition accessories

410‧‧‧Sedimentary source

415‧‧‧deposited materials

450‧‧‧pattern slit sheet

500‧‧‧film deposition accessories

510‧‧‧Sedimentary source

515‧‧‧deposited materials

550‧‧‧pattern slit sheet

600‧‧‧Substrate

Claims (38)

A thin film deposition apparatus for producing a thin film on a substrate, the apparatus comprising a plurality of thin film deposition assemblies, each of the thin film deposition assemblies comprising: a deposition source including a deposition material for discharging the deposition a deposition source nozzle unit that is arranged on one side of the deposition source and includes a plurality of deposition source nozzles arranged in a first direction; a pattern slit sheet that is aligned with the deposition source nozzle Where the unit is reversed and has a plurality of pattern slits arranged in the first direction; and a barrier panel assembly comprising a plurality of barrier panels arranged in the first direction, the barrier panel assembly Arranged between the deposition source nozzle unit and the pattern slit sheet for dividing a space between the deposition source nozzle unit and the pattern slit sheet into a plurality of sub-deposition spaces, wherein The patterned slit sheet of the thin film deposition apparatus is separated from the substrate by a distance, and the pattern slit sheet of the thin film deposition apparatus and the substrate are movable relative to each other The deposition material comprises a material for producing a film selected from the group consisting of: a red (R) emission layer, a green (G) emission layer, a blue (B) emission layer, and a plurality of auxiliary layers; At least one deposition source of material for forming the auxiliary layers is arranged between two deposition sources, the two deposition sources comprising for forming the blue (B) emission layer, the green (G) emission One of the layers, and one of the materials of the red (R) emissive layer. A thin film deposition apparatus for producing a film on a substrate, the device comprising a plurality of a thin film deposition assembly, each of the thin film deposition assemblies comprising: a deposition source including a deposition material for releasing the deposition material; and a deposition source nozzle unit which is arranged on one side of the deposition source And comprising a plurality of deposition source nozzles arranged in the first direction; and a pattern slit sheet which is arranged in a direction opposite to the deposition source nozzle unit and has a direction perpendicular to the first direction a plurality of pattern slits in the second direction, wherein the pattern slit sheet of the thin film deposition apparatus is configured to be used in one of the substrate and the pattern slit sheet of the thin film deposition apparatus The deposition is performed in a first direction relative to the substrate and the other of the thin film deposition apparatus, and the deposition material comprises a material for producing a film selected from the group consisting of: a red (R) emission layer a green (G) emissive layer, a blue (B) emissive layer, and a plurality of auxiliary layers; wherein at least one deposition source including the auxiliary layer for forming is arranged in two deposition sources Each of these two deposition sources by key comprises means for forming the blue (B) emission layer, the material of the green (G) emission layer, and the red (R) emission layer wherein the material. The thin film deposition apparatus of claim 1, wherein the number of thin film deposition fittings is at least five, and the deposition materials respectively arranged in the deposition sources of the at least five thin film deposition fittings are included for The blue (B) emissive layer, one of the auxiliary layers, the green (G) emissive layer, another of the auxiliary layers, and the red (R) emissive layer are sequentially formed. The thin film deposition apparatus of claim 1, wherein the number of thin film deposition fittings is at least five, and the deposition materials respectively arranged in the deposition sources of the at least five thin film deposition fittings are included for Forming the blue (B) emission a layer, one of the auxiliary layers, the red (R) emissive layer, another of the auxiliary layers, and a material of the green (G) emissive layer. The thin film deposition apparatus of claim 1, wherein the deposition materials respectively arranged in the deposition sources of the plurality of thin film deposition assemblies are sequentially deposited on the substrate. The thin film deposition apparatus of claim 5, wherein at least one deposition material for forming the auxiliary layer is disposed between at least two deposition materials for forming the emission layers. The thin film deposition apparatus of claim 1, wherein one of the thin film deposition apparatus and the substrate is opposite to the thin film deposition apparatus and the plane along a plane parallel to the surface of the deposition material The other of the substrates moves. The thin film deposition apparatus of claim 1, wherein the pattern slit sheets of the plurality of thin film deposition assemblies are smaller than the substrate. The thin film deposition apparatus of claim 1, wherein the deposition temperatures of the deposition sources of the plurality of thin film deposition assemblies are each controlled. The thin film deposition apparatus of claim 1, wherein the barrier plate assembly of each of the thin film deposition assemblies forms a flow path for the deposition material released from the deposition source. The thin film deposition apparatus of claim 1, wherein the barrier sheets extend in a second direction substantially perpendicular to the first direction and between the deposition source nozzle unit and the pattern slit sheet The space is divided into a plurality of sub-deposition spaces. The thin film deposition apparatus of claim 1, wherein each of the barrier panel assemblies comprises: a first barrier panel assembly including a plurality of first barrier panels; and a second barrier panel assembly comprising a plurality of Second barrier panel. The thin film deposition apparatus of claim 12, wherein the first barrier sheets and the second barrier sheets extend in a second direction substantially perpendicular to the first direction and the deposition source nozzle The space between the unit and the pattern slit sheet is divided into a plurality of sub-deposition spaces. The thin film deposition apparatus of claim 2, wherein the deposition source, the deposition source nozzle unit, and the pattern slit sheet are integrally formed into a single body by a connecting member. The thin film deposition apparatus of claim 14, wherein the connecting member forms a flow path for the deposition material. The thin film deposition apparatus of claim 14, wherein the connecting member seals a space between the deposition source nozzle unit arranged on the deposition source side and the pattern slit sheet. The thin film deposition apparatus of claim 2, wherein the thin film deposition apparatus is separated from the substrate by a distance. The thin film deposition apparatus of claim 2, wherein when one of the substrate and the thin film deposition apparatus moves in the first direction relative to the other of the substrate and the thin film deposition apparatus, Deposited material released from the thin film deposition apparatus is continuously deposited on the substrate. The thin film deposition apparatus of claim 2, wherein the plurality of deposition source nozzles are inclined at an angle. The thin film deposition apparatus of claim 19, wherein the plurality of deposition source nozzles comprise a plurality of deposition source nozzles arranged in two columns extending in the first direction, and the two columns are The deposition source nozzles in the process are inclined to face each other. The thin film deposition apparatus of claim 19, wherein the plurality of deposition source nozzles comprise a plurality of depositions arranged in two columns formed in the first direction Source nozzles, the deposition source nozzles in a row on the first side of the pattern slit sheet are arranged to face the second side of the pattern slit sheet, and the second side of the pattern slit sheet The deposition source nozzles in a column are arranged to face the first side of the patterned slit sheet. The thin film deposition apparatus of claim 2, wherein the number of thin film deposition fittings is at least five, and the deposition materials respectively arranged in the deposition sources of the at least five thin film deposition fittings are included for The blue (B) emissive layer, one of the auxiliary layers, the green (G) emissive layer, another of the auxiliary layers, and the red (R) emissive layer are sequentially formed. The thin film deposition apparatus of claim 2, wherein the number of thin film deposition fittings is at least five, and the deposition materials respectively arranged in the deposition sources of the at least five thin film deposition fittings are included for The blue (B) emissive layer, one of the auxiliary layers, the red (R) emissive layer, another of the auxiliary layers, and the green (G) emissive layer are sequentially formed. The thin film deposition apparatus of claim 2, wherein the deposition materials respectively arranged in the deposition sources of the plurality of thin film deposition assemblies are sequentially deposited on the substrate. The thin film deposition apparatus of claim 24, wherein at least one deposition material for forming the auxiliary layer is disposed between at least two deposition materials for forming the emission layers. The thin film deposition apparatus of claim 2, wherein one of the thin film deposition apparatus and the substrate is movable relative to the thin film deposition apparatus and the substrate along a plane parallel to a surface of the substrate on which the deposition materials are disposed The other one moves. The thin film deposition apparatus of claim 2, wherein the pattern slit sheets of the plurality of thin film deposition assemblies are smaller than the substrate. The thin film deposition apparatus of claim 2, wherein the deposition temperatures of the deposition sources of the plurality of thin film deposition assemblies are each controlled. A method of fabricating an organic light emitting display element by forming a thin film on a substrate using a thin film deposition apparatus, the method comprising: arranging the substrate to be separated from the pattern slit thin plate of the thin film deposition apparatus by a distance; and when The pattern slit sheet of the thin film deposition apparatus and one of the substrates are released from the thin film deposition apparatus when moving relative to the pattern slit sheet of the thin film deposition apparatus and the other of the substrates Depositing a material deposited on the substrate, wherein the thin film deposition apparatus includes a plurality of thin film deposition assemblies, each of the thin film deposition assemblies including: a deposition source including a deposition material, the deposition source being used to release the deposition material a deposition source nozzle unit that is arranged on one side of the deposition source and includes a plurality of deposition source nozzles arranged in the first direction; the pattern slit sheet, which is arranged in the deposition source nozzle Where the unit is reversed and has a plurality of pattern slits arranged in the first direction; and a barrier panel assembly comprising the a plurality of barrier plates in a direction, the barrier plate fittings being arranged between the deposition source nozzle unit and the pattern slit sheet, the barrier plate fittings being used for the deposition source nozzle unit and the pattern slit The space between the sheets is divided into a plurality of sub-deposition spaces; wherein the deposition material comprises a material for producing a film selected from the group consisting of: a red (R) emissive layer, a green (G) emissive layer, and a blue (B) an emissive layer and a plurality of auxiliary layers. A method of fabricating an organic light emitting display element by forming a thin film on a substrate using a thin film deposition apparatus, the method comprising: Arranging the substrate to be spaced apart from the pattern slit sheet of the thin film deposition apparatus; and when the pattern slit sheet of the thin film deposition apparatus and the substrate are narrow relative to the thin film deposition apparatus Depositing material released from the thin film deposition apparatus is deposited on the substrate while the slit sheet and the other of the substrates are moved, wherein the thin film deposition apparatus includes a plurality of thin film deposition fittings, each of the thin films The deposition fittings each include: a deposition source including a deposition material for discharging the deposition material; a deposition source nozzle unit which is arranged on one side of the deposition source and includes being arranged in the first direction a plurality of deposition source nozzles; and the pattern slit sheet, which is arranged in a direction opposite to the deposition source nozzle unit and having a plurality of the second direction arranged in a direction perpendicular to the first direction a pattern slit, wherein the deposition material comprises a material that produces a film selected from the group consisting of: a red (R) emissive layer, a green (G) emissive layer a blue (B) emissive layer and a plurality of auxiliary layers; wherein at least one deposition source comprising a material for forming the auxiliary layers is arranged between two deposition sources, the two deposition sources being included for One of the materials of the blue (B) emissive layer, the green (G) emissive layer, and the red (R) emissive layer is formed. The method of claim 29, wherein the blue (B) emission layer, one of the auxiliary layers, the green (G) emission layer, another layer of the auxiliary layers, and the The deposition material of the red (R) emissive layer is respectively released from the plurality of thin film deposition joints and sequentially deposited on the substrate. The method of claim 29, wherein the method is used to separately form the blue color (B) The emissive layer, one of the auxiliary layers, the red (R) emissive layer, another of the auxiliary layers, and the deposited material of the green (G) emissive layer are respectively released from the plurality of thin film deposition joints Out and will be deposited on the substrate in sequence. The method of claim 29, wherein the deposition materials respectively disposed in the deposition sources of the plurality of thin film deposition assemblies are sequentially deposited on the substrate. The method of claim 29, wherein depositing the deposited material on the substrate further comprises separately controlling a deposition temperature of the plurality of thin film deposition assemblies. The method of claim 30, wherein the blue (B) emission layer, one of the auxiliary layers, the green (G) emission layer, another layer of the auxiliary layers, and the The deposition material of the red (R) emissive layer is respectively released from the plurality of thin film deposition joints and sequentially deposited on the substrate. The method of claim 30, wherein the blue (B) emissive layer, one of the auxiliary layers, the red (R) emissive layer, another layer of the auxiliary layers, and the The deposition material of the green (G) emissive layer is respectively released from the plurality of thin film deposition joints and sequentially deposited on the substrate. The method of claim 30, wherein the deposition materials respectively disposed in the deposition sources of the plurality of thin film deposition assemblies are sequentially deposited on the substrate. The method of claim 30, wherein depositing the deposition material on the substrate further comprises separately controlling a deposition temperature of the plurality of thin film deposition assemblies.