TWI259635B - Terminal electrode forming method of a circuit protection unit and its product - Google Patents

Terminal electrode forming method of a circuit protection unit and its product Download PDF

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TWI259635B
TWI259635B TW94122800A TW94122800A TWI259635B TW I259635 B TWI259635 B TW I259635B TW 94122800 A TW94122800 A TW 94122800A TW 94122800 A TW94122800 A TW 94122800A TW I259635 B TWI259635 B TW I259635B
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terminal electrode
metal substrate
metal
forming
substrate
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TW94122800A
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TW200703834A (en
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Hung-Yi Juang
Guo-Shu Tzeng
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Ta I Technology Co Ltd
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Abstract

A terminal electrode forming method of a circuit protection unit and its product are disclosed. First, form a protection layer in the middle position of the upper surface and the lower surface of the metal substrate as the resistance material, and leave the two ends of the metal substrate exposed. Then, use the powder metallurgical process to form electrodes on the two ends of the metal substrate, enabling the electrodes to have arbitrary shapes to meet the requirement for every different circuit. Hence, the overall characteristics is promoted.

Description

1259635‘ 九、發明說明: 【發明所屬之技術領域】 本發明是有關-種電路保護元件之端電極形 ::法及其製品,係先形成一保護層 才質之金屬基板的上、下表面的中間位置,並使 »亥金屬基板之兩端裸露,而後再於該金屬基板之 兩:利用粉末治金製程形成端電極,使端電極可 以衣成任意形狀,以適合各種不同電路之要 提昇整體之使用特性者。 【先前技術】 一般電路設計時,為確保電路安全性, 電^中增加電路保護元件,例如電阻、保險絲等。 口圖1 ’為電路保護元件之習知厚膜晶片電阻i, C 一作為基材之陶宪基板11、-以網框印 式覆蓋於陶究基板”上之電阻膜12、兩形 方:陶瓷基板11兩侧並導接電阻臈12之端面電 本13及-覆蓋於電阻膜12上之保護層14。 、為了大量製造,如圖2,此晶片電阻”製造 f程時於一體積較大之陶瓷板1〇上一次形成多 數個矩陣般排列且分立之電阻。但,如圖,,難電 :膜12與保護層14係位於陶充基板11之上表 之兩Si端面電極13則需分別位於陶究基板11 之兩側4。因此,在製造過財,形成電阻膜Μ 1259635 與保邊層14後,必須先將陶板1 〇分割,使將 各晶片電阻之側緣曝露出來,才能形成端面電 極。一般係沿陶瓷板彳◦之刻線彳〇1將陶瓷板]〇 以物理斷裂方式將其分開,例如扳開,使整片陶 瓷板10分離成具有複數相連電阻之條狀1〇2(如 0 3)或母個電阻各自獨立之塊狀,以曝露所有 電路保護元件之侧緣,再利用沾銅或銀方式使其 正、背相互連接。 、[Technical Field] The present invention relates to a terminal electrode shape of a circuit protection component: a method and a product thereof, which are formed by first forming a protective layer of a metal substrate upper and lower surfaces The middle position, and the two ends of the metal substrate are exposed, and then the two of the metal substrate: using the powder metallurgy process to form the terminal electrode, so that the terminal electrode can be arbitrarily shaped to suit various circuits. The overall use characteristics. [Prior Art] In order to ensure circuit safety during general circuit design, circuit protection components such as resistors and fuses are added to the circuit. Port diagram 1 'is a conventional thick film wafer resistor i of a circuit protection component, C. A ceramic substrate 11 as a substrate, a resistive film 12 covered with a screen printing on a ceramic substrate, and two squares: a ceramic substrate 11 on both sides and the end face of the resistor 臈12 and the protective layer 14 overlying the resistive film 12. For a large number of manufacturing, as shown in Fig. 2, the chip resistor is manufactured in a large volume. The ceramic plate 1 〇 last formed a plurality of matrix-like and discrete resistors. However, as shown in the figure, the two Si end surface electrodes 13 of the film 12 and the protective layer 14 on the ceramic substrate 11 are respectively located on the two sides 4 of the ceramic substrate 11. Therefore, after the manufacturing of the resistor film 1259635 and the edge-preserving layer 14, it is necessary to divide the ceramic plate 1 , so that the side edges of the respective resistors are exposed to form the end face electrode. Generally, the ceramic plate is separated by a physical fracture along the line 彳〇1 of the ceramic plate, for example, the plate is separated, and the whole ceramic plate 10 is separated into strips having a plurality of connected resistances (for example, 0 3) or the parent resistors are independent of each other to expose the side edges of all circuit protection components, and then connect the front and back sides with copper or silver. ,

然後,由於此時陶瓷板1〇已分成條狀1〇2 或塊狀所以大都採用滾鍍方式來形成端面電極 13。一般在滾鍍5〜9小時僅能鍍〇_〇5〜〇.imm 厚度,造成習知電阻之製造流程更加冗長。Then, since the ceramic plate 1〇 has been divided into strips 1〇2 or blocks in this case, the end face electrodes 13 are mostly formed by barrel plating. Generally, the thickness of 〇_〇5~〇.imm can be plated for 5 to 9 hours after barrel plating, resulting in a more lengthy manufacturing process of conventional resistors.

又,習知晶片電阻1於製造過程中需高溫烘 烤,例如中華民國第8681 1 31 62號專利案所揭 露,在形成電阻膜彳2步驟中將電阻膜12印刷於 陶曼基板1 1上後’再經由乾燥、高溫(如) 燒結等製程始能形成,及在端面電極13過程中, 先將銅電極糊設於陶瓷板10之兩側面後,再經高 溫(如80CTC)烘烤一段時間(如1〇分鐘)始能形成 立而面電極1 3。 咏由於習知晶片電阻1於製造過程中需高溫烘 烤’ m 1〇尺寸稍A ’㈣冷縮造成之平整度 問題就會相當明顯’良率隨之驟降,價格從而大 6 1259635 巾田提昇,使得目岫常用尺寸僅約為1 〇 * 1 〇cm, 故採用陶究基板時,每次製造的元件數量有限。Moreover, the conventional chip resistor 1 is required to be baked at a high temperature during the manufacturing process. For example, as disclosed in the Patent No. 8681 1 31 62, the resistive film 12 is printed on the Tauman substrate 1 in the step of forming the resistive film 彳2. After the 'drying, high temperature (such as) sintering process can be formed, and in the process of the end face electrode 13, the copper electrode paste is first placed on both sides of the ceramic plate 10, and then baked at a high temperature (such as 80 CTC) The time (e.g., 1 minute) can form the vertical electrode 13 .咏Because the conventional chip resistor 1 needs high temperature baking during the manufacturing process, 'm 1〇 size slightly A' (four) cold shrinkage caused by the flatness problem will be quite obvious 'the yield will drop suddenly, the price is thus large 6 1259635 The lifting makes the common size of the target only about 1 〇* 1 〇cm, so when using the ceramic substrate, the number of components manufactured each time is limited.

、而且由方;省知厚膜晶片電阻^之電阻膜12 以印刷方式形成,電阻膜12之厚度容易不均,且 f電阻膠擴散與燒結溫度的變異影¥,致使厚膜 晶^電阻1之電阻值變化較大。尤其在—旦應用 於高頻環境時,因厚膜晶片電阻1之電阻膜/2孔 隙率高、結構鬆散,導致高頻訊號損耗(丨ost)較 大,因而不適用於高頻範圍。 、又,一般習知保險絲亦是包含一基板、一形 成方、基板之保險絲—覆蓋保險絲部之保護層 及以站銀與滾鍍方式形成於基板兩端之端面電i 。因而,習知保險絲亦具有製程冗長之缺憾。 【發明内容】 有鑒於習知電路保護元件之缺憾,本發明係 直接以金屬基板來作為電阻層或保險絲部,以省 略習知於Μ基板上形成作為電阻或保險絲部金 屬膜之步驟,並利㈣末治金製程來形成端電 極,以解決前述問題。 因此,本發明之一目的,是在提供一種電路 保4元件之電極形成方法,係使電路保護元件 的細電極以粉末治金製程所形成,使其可為各種 任意的形狀,以因應不同電路之所需。 7 1259635 本發明之次一目的,係在金屬板上形成穿孔 後,並在形成端電極後再予分割,而能達到製造 流程簡化之功效。 本發明之又一目的,是在提供一種電路保護 元件之端電極形成方法,直接以金屬基板作為電 阻層或保險絲部,以達到簡化結構與縮短製程之 功效。Moreover, the resistive film 12 of the thick film resistor is formed by printing, the thickness of the resistive film 12 is easily uneven, and the variation of the f-resistance diffusion and the sintering temperature is caused, so that the thick film crystal resistance 1 The resistance value varies greatly. Especially when applied to a high-frequency environment, the resistive film of the thick film chip resistor 1 has a high aperture ratio and a loose structure, resulting in high frequency signal loss (丨ost), and thus is not suitable for the high frequency range. Moreover, a conventional fuse is also a fuse including a substrate, a square, and a substrate - a protective layer covering the fuse portion and an end surface electrically formed at both ends of the substrate by means of station silver and barrel plating. Therefore, conventional fuses also have the drawback of lengthy process. SUMMARY OF THE INVENTION In view of the drawbacks of conventional circuit protection components, the present invention directly uses a metal substrate as a resistance layer or a fuse portion, so as to omit the conventional steps of forming a metal film as a resistor or a fuse portion on a germanium substrate, and (4) The final gold process to form the terminal electrode to solve the aforementioned problems. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an electrode forming method for a circuit-protected 4-element in which a thin electrode of a circuit protection element is formed by a powder metallurgy process so that it can be in any arbitrary shape to respond to different circuits. Needed. 7 1259635 The second object of the present invention is to form a perforation on a metal plate and to divide it after forming the terminal electrode, thereby achieving the simplification of the manufacturing process. Another object of the present invention is to provide a method for forming a terminal electrode of a circuit protection component, which directly uses a metal substrate as a resistor layer or a fuse portion to achieve a simplified structure and a shortened process.

本發明之再一目的 元件之端電極形成方法 之金屬基板來作為電阻 功效。 ,是在提供一種電路保護 ’以厚度均勻與結構紮實 ’以達到適用高頻環境之 於是,本發明具電路保護元件之端電極形成 方法,係包含以下步驟:Still another object of the present invention is a metal substrate for forming a terminal electrode of a device as a resistance effect. The present invention provides a circuit protection 'too uniform thickness and structure' to achieve a suitable high frequency environment. Thus, the method for forming a terminal electrode of a circuit protection component of the present invention comprises the following steps:

步驟A)分別於一金屬基板的上、下表面的中 :位置形成一保護層’以使該金屬基板之兩端裸 路;及 ⑴分別於該金屬基板之兩端制粉末治 金衣程形成端面電極。 有關本發明之前述及其他技術内容、特點與 ^兒明^下配合參考圖式之—較佳實施例的詳 况明中,將可清楚的明白。 【實施方式】 本發明之電路保護元件之端電極形成方法, 8 1259635 如圖4所示,為說明方便,本實施例中先以製造 為晶片電阻之電路保護元件來說明。又,—般晶 片電阻為大量製造,因而本實施例係以單次製造 多數個晶片電阻來說明。 首先,在步驟20中,提供一如圖5之金屬板 3為了直接利用金屬板3來作為晶片電阻中的電 阻層,本實施例中金屬板3之材質為電阻溫度 j Temperature coefficient of resistance)小之 電阻材質,例如電阻溫度於10ppm/t〜20〇ppm c之範圍内。本例之金屬板3之材質可為鎳鉻合 金、鎳鋼合金、鐵鎳合金或錳銅合金等等,依設 5十者需要而決定。本例之金屬板3之厚度約為 〇-〇5mm〜〇.8mm與寬度約為1C)mm〜Step A) forming a protective layer 'in the middle of the upper and lower surfaces of a metal substrate to make the two ends of the metal substrate bare; and (1) forming a powder metallurgical process on both ends of the metal substrate End face electrode. The above and other technical contents, features, and advantages of the preferred embodiments of the present invention will be apparent. [Embodiment] The method of forming the terminal electrode of the circuit protection element of the present invention, 8 1259635 is shown in Fig. 4. For convenience of explanation, in the present embodiment, a circuit protection element fabricated as a chip resistor will be described first. Further, since the wafer resistance is mass-produced, the present embodiment is described by manufacturing a plurality of wafer resistors in a single pass. First, in step 20, a metal plate 3 as shown in FIG. 5 is provided to directly utilize the metal plate 3 as a resistive layer in the chip resistor. In this embodiment, the material of the metal plate 3 is a small temperature coefficient of resistance. The resistance material, for example, the resistance temperature is in the range of 10 ppm/t to 20 〇 ppm c. The material of the metal plate 3 of this example may be nickel-chromium alloy, nickel-steel alloy, iron-nickel alloy or manganese-copper alloy, etc., depending on the needs of the tenth. The thickness of the metal plate 3 of this example is about 〇-〇5mm~〇.8mm and the width is about 1C)mm~

1 000m m,而長度依需形成的晶片電阻的數量決 定。舉例來說,若長為1〇〇〇咖與寬為650mm 的金屬板3約可形成5000〜2〇〇〇〇個晶片電阻。 ^其次,在步驟21中,如圖6,於金屬板3上 ”成矩陣排列之穿孔31,以形成複數個橫 向延伸之電阻條(指金屬條)32。因而,各電阻條 ^具有多數個穿孔31與複數個分別位於兩穿孔 間的金屬基版33。各金屬基板33係用來形成 -晶片電阻。本例中穿孔31係沖壓形成、穿孔 尺寸為0.15mm〜30mm、兩相鄰穿孔31中 1259635 間的間隔距離為0e15mm〜1〇mm,及兩列穿孔 31間的間隔距離為0.15mm〜30mm。另外,為 了方便金屬板3定位於後續的製程設備上,於形 成穿孔31時,更於金屬板3上錯開穿孔3彳與金 屬板33的位置(例如於電阻條32的上、下側)形 成f數個定位孔34,以供製程設備定位。應注意 的是:雖本例中財㈣成穿孔31與定位孔34, 然而熟習該項技毓老者知 、,^ 议京有田知亦可利用蝕刻成形, 並不受限於本實施例所揭露者。 為了增加金屬基板33與保護層 度,本例的晶片電阻更於步驟22中,如圖7,於 ==屬太基板33上下表面的置中位置形 取黏著層3 5。本例中勒签思 供.^ ^ Τ站者層35係可濺鍍、蒸 鍍、化學電鍍方式形成且1 从紐、 风1其材質可依金屬板3之 材i而選用適當的金屬材 ^ 刊貝例如銅、鎳、錫、 銀或刖述金屬合金等等, ^ m 〇 ,. ;度約為1从m〜50 β m此外,由於黏著層35炎入η λ 可增加金屬基板33與伴’:广屬材質’使其除 ^ . 、保遂層間的結合強度外,f 了用來調整電阻係數,f 數等等。再者,若金 :阻值、電阻溫度係 層間的結合強度足夠所應用材質與保護 22可省略。 ^成黏著層35之步驟 緊接著,在步驟士 V23中’如圖8與圖9,於各 1259635 至屬基板33的上下表面的置中位置形成一覆蓋 t黏Ϊ層35上之保護層36,使金屬基板33之兩 而裸路而未被保護層36覆蓋。本例的保護層36 作用為絕緣及防桿。再者,在本例中,如圖1〇, 保護層36除形成於金屬基板33之上下表面外, 為了保護各金屬基板33之置中位置的左、右兩側 面(指穿孔31之周壁),更需使金屬基板31之左 右兩側亦有形有保護層36。因此,本例中穿孔31 設計為十字型,使形成保護層36過程中,保護層 36之材質易流入穿孔31巾,讓保護層36覆蓋於 各金屬基板33的置中位置的上、下表面與左、右 側面。本例中的保護層36的材質為環氧樹脂 (Epoxy) , Epoxy Molding Compounds(Fused HCa) ’其厚度為1mm〜1〇mm。 其次’在步驟24中,如圖1 1與圖彳2,於各 至屬基板33之兩端的上下表面形成金屬層37以 作為端電極。 而後,在步驟25中,切割金屬板3,使複數 個金屬基板33獨立而可作為一晶片電阻(如圖 13)。金屬板3係可以沖壓、化學蝕刻、預先於金 屬板33上形成分割線再以物理方式分割金屬板 3田射切割或鑽石切割等等,依設計需求來選用 切割方式。 1259635 來安= 诸如錫之類的導電膠 刷電路板上,為了加強導電膠與電極 間的導膠導接性,本例更於步驟26中,如圖14, 更形成-包覆金屬基板33兩端部之金屬臈%,’ 以覆蓋於金屬層37及金屬基板%之兩端 :可有效避免晶片電阻與印刷電路板間的黏著不 又本例中金屬膜38係鎳锡金屬膜且其厚产 = 〇〇5mm〜0.02mm。再者,由於金屬板^已分 副且金屬膜38的厚度甚小於金屬層37, 金屬膜38係以滚鑛方式形成於各金屬基板%1 000m, and the length depends on the number of wafer resistors to be formed. For example, if the length is 1 〇〇〇 coffee and the metal plate 3 having a width of 650 mm can form about 5,000 to 2 晶片 wafer resistance. ^ Next, in step 21, as shown in FIG. 6, the perforations 31 are arranged in a matrix on the metal plate 3 to form a plurality of laterally extending resistive strips (referring to metal strips) 32. Thus, each of the resistive strips has a plurality of The perforation 31 and a plurality of metal base plates 33 respectively located between the two perforations. The metal substrates 33 are used to form a wafer resistance. In this example, the perforations 31 are formed by stamping, the perforation size is 0.15 mm to 30 mm, and two adjacent perforations 31 are formed. The distance between the 1259635 is 0e15mm~1〇mm, and the distance between the two rows of perforations 31 is 0.15mm~30mm. In addition, in order to facilitate the positioning of the metal plate 3 on the subsequent process equipment, when the perforation 31 is formed, The position of the metal plate 3 and the metal plate 33 are staggered (for example, on the upper and lower sides of the resistor bar 32) to form a plurality of positioning holes 34 for positioning of the process equipment. It should be noted that in this example, The financial (4) is formed into the perforation 31 and the positioning hole 34. However, it is known to those skilled in the art that the technology can be formed by etching, and is not limited to those disclosed in the embodiment. In order to increase the metal substrate 33 and protect it. Lamination, the chip resistance of this example is more In step 22, as shown in Fig. 7, the adhesive layer 35 is formed at a centering position of the upper and lower surfaces of the sub-substrate 33. In this example, the sign is provided for the ^^^ station layer 35 can be sputtered and steamed. Plating, chemical plating method is formed and 1 from the New Zealand, the wind 1 material can be selected according to the material i of the metal plate 3, such as copper, nickel, tin, silver or a metal alloy, etc., ^ m 〇, . ; degree is about 1 from m to 50 β m. In addition, since the adhesion layer 35 is inflamed into η λ, the metal substrate 33 and the accompanying ': wide material' are removed to eliminate the bonding strength between the layers. , f is used to adjust the resistivity, f number, etc. In addition, if the gold: resistance, resistance temperature, the bonding strength between the layers is sufficient, the applied material and protection 22 can be omitted. ^ The step of forming the adhesive layer 35 is followed by In step V23, as shown in FIG. 8 and FIG. 9, a protective layer 36 covering the adhesive layer 35 is formed at a centering position of each of the upper and lower surfaces of the substrate 3333, so that the metal substrate 33 is bare and bare. The protective layer 36 of this example functions as an insulation and a bar. Further, in this example, as shown in FIG. In addition to being formed on the upper surface of the metal substrate 33, in order to protect the left and right sides of the center position of each metal substrate 33 (refer to the peripheral wall of the through hole 31), it is necessary to have a protective layer on the left and right sides of the metal substrate 31. 36. Therefore, in this example, the through hole 31 is designed in a cross shape, so that the material of the protective layer 36 easily flows into the through hole 31 during the formation of the protective layer 36, so that the protective layer 36 covers the center of each metal substrate 33, The lower surface and the left and right sides. The protective layer 36 in this example is made of epoxy resin (Epoxy) and Epoxy Molding Compounds (Fused HCa) 'having a thickness of 1 mm to 1 mm. Next, in step 24, as shown in Figs. 11 and 2, a metal layer 37 is formed on the upper and lower surfaces of both ends of each of the substrate substrates 33 as a terminal electrode. Then, in step 25, the metal plate 3 is cut so that the plurality of metal substrates 33 are independent and can function as a wafer resistor (Fig. 13). The metal plate 3 can be stamped, chemically etched, formed into a dividing line on the metal plate 33, and physically divided into a metal plate. 3 Field cutting or diamond cutting, etc., and the cutting method is selected according to design requirements. 1259635 Lai'an = conductive brush circuit board such as tin, in order to strengthen the conductive adhesive between the conductive paste and the electrode, this example is further in step 26, as shown in Figure 14, forming a cladding metal substrate 33 The metal 臈% at both ends, 'covers the metal layer 37 and the metal substrate % at both ends: the adhesion between the chip resistor and the printed circuit board can be effectively avoided. In this example, the metal film 38 is a nickel-tin metal film and Thick production = 〇〇5mm~0.02mm. Furthermore, since the metal plate is already divided and the thickness of the metal film 38 is much smaller than that of the metal layer 37, the metal film 38 is formed by rolling metal on each metal substrate.

兩端部。 J 因此,如圖14,本實施例之晶片電阻包括金 屬基板33、形成於金屬基板33的置中位置的上 下表面的保護層36、形成於金屬基板33之兩端 面並由金屬層37與金屬膜38構成之電極。 ❿ ^上述形成於金屬基板33兩侧的金屬層37, 係以粉末冶金製程於裸露的端面上制銅粉末經 由冶金製程所形成,由於金屬層37是以冶金製程 形成,故其無需受限於金屬基板33的表面,其^ 向基板的側邊或上下邊凸出,而可製成任意之升j 狀,以因應不同電路之要求。 ^ 如圖15所示,係本發明之電路保護元件之 電極的第一實施例示圖,由該圖示所表示,係該 12 Ϊ259635 而電極為方形狀端面電極4 面41與下端面42略t ,其端電極4的上端 36,其側端而阿於金屬基板33的保護層 面43則凸出於金眉其^ 金屬基板33的部、,屬基板33,使凸出 合於印刷電路板上々以彎折,以便作為插腳而組 如圖1 6所示,侥太 電極的第二實施例干、s之電路保護元件之端 端電極為長條狀端電:5由:圖示所表示,係該 盥下#二電極5,使端電極5的上端面 長停、為向内凹陷而外端向外延伸之 使金屬Α本ιί其延伸出的部份較長,故f折後 二具有較高之插腳,可組合至需要較高 回度之電路板上。 所示,係本發明之電路保護元件之端 电極的第三實施例干 , 只匕例不圖,由该圖示所表示,係該 立而電極為環弧形狀戚雷 舜入sΓ 電形成類似以—球形包 =屬基板33的兩端’其上下端均高於保護層 且為向外呈環抱狀,使其彎折後具有較大之 接觸面積以因應相關電路之要求。 綜上所述可知,本發明由於使電路保護元件 之端電極以粉末冶金製程來形成,其形狀即不需 雙限於基板高度或基板中間上下端面保護層高度 的限制,可因應各種不同電路之需要,而形成可 供配合之插腳,其亦經粉末治金製程形成端面電 13 1259635 極之金屬基板’作為保險絲使用。 已,::士所述者,僅為本發明之較佳實施例而 田月匕以此限定本發明實施之範圍,即大凡 申請專利範圍及發明說明書内容= 早的專效變化與修姊,皆應仍屬本發明專利涵 盍之範圍内。 试A寻利涵 1259635 【圖式簡單說明】 圖1是習知厚膜晶片電阻之剖視示意圖; 圖2是圖1中的晶片電阻的-形成保護層之製程 示意圖; 圖3是圖1中的晶片電阻的-切割陶:是板之製程 示意圖, 圖4是本發明之流程圖; 圖5是圖4實施例的金屬板的示意圖; 圖6是圖4實施例中於金屬板上形成穿孔的一製 程不意圖; 圖7是圖4實施例中形成黏著層的一製程示意 圖 圖 圖 圖8是圖4實施例中形成保護層的一製程示意 圖9是圖8的一局部剖視圖; 圖1 0是圖8的一局部俯視圖; 圖11是® 4實施例中形成金屬層之—製程示意 圖1 2是圖1 1的一局部剖視圖; 圖13是圖4實施例中分割金屬板之一製程示意 圖14是圖4實施例中形成金屬膜之一製程示意 15 1259635 圖1 5是本發明以粉末冶金形成之端電極第一實 施例示圖; 圖1 6是本發明以粉末冶金形成之端電極第二實 施例不圖, 圖1 7是本發明以粉末冶金形成之端電極第三實 施例示圖。 【主要元件符號說明】 • 3 :金屬板 3 5 :黏著層 3 6 :保護層 3 7 :端電極 38 :金屬膜 2〇〜26 :步驟 31 :穿孔 32 :電阻條 33 :金屬基板 34 :定位孔 4 :方形狀端面電極 41 :上端面 42 :下端面 43 :側端面 5 :長條狀端電極 51 :上端面 52 :下端面 6 :環弧形狀端電極 16Both ends. Therefore, as shown in FIG. 14, the wafer resistor of the present embodiment includes a metal substrate 33, a protective layer 36 formed on the upper and lower surfaces of the centering position of the metal substrate 33, and formed on both end faces of the metal substrate 33 and composed of the metal layer 37 and the metal. The membrane 38 constitutes an electrode. ❿ ^ The above-mentioned metal layer 37 formed on both sides of the metal substrate 33 is formed by a metallurgical process by a metallurgical process on a bare end surface of the copper powder. Since the metal layer 37 is formed by a metallurgical process, it is not limited to The surface of the metal substrate 33 protrudes toward the side or the upper and lower sides of the substrate, and can be made into any J shape to meet the requirements of different circuits. As shown in FIG. 15, a first embodiment of an electrode of a circuit protection component of the present invention is shown by the figure, which is 12 Ϊ 259635 and the electrode is a square-shaped end face electrode 4 face 41 and a lower end face 42 slightly t The upper end 36 of the terminal electrode 4, the protective layer 43 of the metal substrate 33 at the side end thereof protrudes from the portion of the metal substrate 33, and belongs to the substrate 33 so as to be convexly bonded to the printed circuit board. Bending, so as to be set as a pin as shown in Fig. 16. The second embodiment of the electrode of the electrode, the terminal electrode of the circuit protection component of the s is a long end terminal: 5: as indicated by the figure The second electrode 5 of the armpit 5 causes the upper end surface of the end electrode 5 to be long, and is recessed inwardly and the outer end of the end electrode 5 is extended to extend the portion of the metal sheet which is extended by the metal sheet. The high pins can be combined on a board that requires a higher degree of return. As shown, the third embodiment of the terminal electrode of the circuit protection component of the present invention is shown by way of example only, and is represented by the illustration, and the electrode is in the shape of a ring arc. The two ends of the spheroidal package=the base plate 33 are higher than the protective layer and are outwardly hooped, so that they have a large contact area after bending to meet the requirements of the relevant circuit. In summary, the present invention is formed by making the terminal electrode of the circuit protection component in a powder metallurgy process, and the shape thereof does not need to be limited to the height of the substrate or the height of the upper and lower end surface protective layers of the substrate, and can meet the needs of various circuits. And forming a pin that can be matched, which is also used as a fuse by a powder metallurgy process to form an end face electric 13 1359635 metal substrate. The term ":" is merely a preferred embodiment of the present invention, and Tian Yuexi limits the scope of implementation of the present invention, that is, the scope of application of the patent and the content of the invention description = early special effects change and repair, All should remain within the scope of the patent of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing a conventional thick film wafer resistor; FIG. 2 is a schematic view showing a process of forming a protective layer of the wafer resistor of FIG. 1; FIG. 3 is a wafer of FIG. FIG. 5 is a schematic view of a metal plate of the embodiment of FIG. 4; FIG. 6 is a schematic view of a metal plate of the embodiment of FIG. FIG. 7 is a schematic view of a process for forming an adhesive layer in the embodiment of FIG. 4. FIG. 8 is a partial cross-sectional view of FIG. 8 showing a process for forming a protective layer in the embodiment of FIG. 4. FIG. FIG. 11 is a partial cross-sectional view of FIG. 11 in the embodiment of FIG. 4; FIG. 13 is a schematic view of a process of dividing the metal plate in the embodiment of FIG. 4 Process for forming a metal film in the embodiment 15 1559635 FIG. 15 is a first embodiment of the terminal electrode formed by powder metallurgy of the present invention; FIG. 16 is a second embodiment of the terminal electrode formed by powder metallurgy of the present invention. Figure, Figure 1 7 is the present invention A diagram illustrating a terminal electrode is formed of the end of the third embodiment is applied metallurgy. [Main component symbol description] • 3: metal plate 3 5 : adhesive layer 3 6 : protective layer 3 7 : terminal electrode 38 : metal film 2 〇 〜 26 : step 31 : perforation 32 : resistance bar 33 : metal substrate 34 : positioning Hole 4: square-shaped end surface electrode 41: upper end surface 42: lower end surface 43: side end surface 5: elongated end electrode 51: upper end surface 52: lower end surface 6: ring-arc shape terminal electrode 16

Claims (1)

!259635 申請專利範圍·· 1_ 一種電路保護元件之端電極形成方法,係包 含以下步驟: 步驟A)分別於一金屬基板的上、下表面的中 間位置形成一保護層,使該金屬基板之兩端裸 路,及 步驟B)分別於該金屬基板之兩端利用粉末治 金製程形成端電極者。 2 ·如申請專利範圍第1項所述之端電極形成方 法其中’该步驟A)中的金屬基板之電阻溫 度係於1 0〜2 0 〇 p p m / °C之範圍内。 3·如申請專利範圍第彳或第2項所述之端電極 形成方法,其中,在該步驟A)中該金屬基板 之材質係選擇由鎳鉻合金、鎳銅合金、鐵鎳合 金及般銅合金組成群組中的一者。 4 如申請專利範圍第1項所述之端電極形成方 法,更包含一於該步驟A)前之步驟〇),係先 於該金屬基板上、下表面中預備形成該等保護 層位置形成一用以加強該等保護層與該金屬 基板間的結合強度之黏著層。 5 ·如申明專利範圍第4項所述之端電極形成方 法’其中’該黏著層之材質係選擇由銅、鎳、 錫、銀及前述金屬合金所組成的群組中的一 者0 17 !259635 6 _如申請專利範圍第1項所述之端電極形成方 法’其中’在該步驟B)中係先於該金屬基板 之兩端的上、下表面電鍍一導電性佳之金屬 層,再於該金屬層之表面和該金屬基板之端面 形成一錫鎳金屬膜。 7 ·如申4專利範圍第6項所述之端電極形成方 法,其中,該金屬層之材質為銅。 8 · —種電路保護元件之端電極結構,包含: 一金屬基板,具有一上表面、一與該上表面相 對之下表面及兩端; 一保護層,係分別形成於該金屬基板之上、下 表面置中位置而未覆蓋該金屬基板之兩端 及 兩設於基板兩做端之端電極; 其中,所述之端電極係經粉末治金所成型者。 9 _如申#專利範圍第8項所述之端電極結構 中所述之端電極為方形狀。 、 10.如申請專利範圍第8項所述之端電極結構, 其中所述之端電極為長條形狀。 如申請專利範圍第8項所述之端 其中所述之端電極為環形狀。 18259635 Patent Application Scope 1· A method for forming a terminal electrode of a circuit protection component includes the following steps: Step A) forming a protective layer at an intermediate position between the upper and lower surfaces of a metal substrate, respectively The bare end, and the step B) respectively form a terminal electrode by a powder metallurgy process at both ends of the metal substrate. 2. The terminal electrode forming method according to the first aspect of the invention, wherein the metal substrate in the step A) has a resistance temperature in the range of 10 to 20 〇 p p m / °C. 3. The method of forming a terminal electrode according to the invention of claim 2 or 2, wherein in the step A), the material of the metal substrate is selected from a nickel-chromium alloy, a nickel-copper alloy, an iron-nickel alloy, and a copper alloy. One of the alloy composition groups. The method for forming a terminal electrode according to the first aspect of the invention, further comprising a step 〇) before the step A), forming a position of the protective layer in the upper and lower surfaces of the metal substrate. An adhesive layer for reinforcing the bonding strength between the protective layer and the metal substrate. 5. The method of forming a terminal electrode according to item 4 of the patent scope of the invention, wherein the material of the adhesive layer is selected from the group consisting of copper, nickel, tin, silver and the aforementioned metal alloy. 259635 6 _ The method for forming a terminal electrode according to claim 1, wherein in the step B, a conductive metal layer is plated on the upper and lower surfaces of the two ends of the metal substrate, and then A tin-tin metal film is formed on the surface of the metal layer and the end surface of the metal substrate. The method of forming a terminal electrode according to claim 6, wherein the metal layer is made of copper. The end electrode structure of the circuit protection component comprises: a metal substrate having an upper surface, a surface opposite to the upper surface and both ends; a protective layer formed on the metal substrate, The lower surface is centered without covering both ends of the metal substrate and two end electrodes disposed at the ends of the substrate; wherein the terminal electrodes are formed by powder metallurgy. The terminal electrode described in the terminal electrode structure described in the eighth aspect of the patent application is a square shape. 10. The terminal electrode structure of claim 8, wherein the terminal electrode is in the shape of a strip. The end of the invention is in the form of a ring as described in the eighth paragraph of the patent application. 18
TW94122800A 2005-07-06 2005-07-06 Terminal electrode forming method of a circuit protection unit and its product TWI259635B (en)

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