TW449799B - Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby - Google Patents
Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby Download PDFInfo
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- TW449799B TW449799B TW087118976A TW87118976A TW449799B TW 449799 B TW449799 B TW 449799B TW 087118976 A TW087118976 A TW 087118976A TW 87118976 A TW87118976 A TW 87118976A TW 449799 B TW449799 B TW 449799B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
449799 五、發明說明（1) [發明所屬的技術領域] 本發明為關於具有微細模圖（pattern)之半導體裝置 及其製造方法《詳言之為關於LS I半導體元件，液晶^示 板等之於微細加工時之抗蝕膜模圖的形成方法，更特定之 為關於高精度之微細的抗蝕膜模圖的形成方法。 [習用的技術] 第8圖表示依習用的方法於底板層21上用步進機 (stepper)於最適焦點將遮膜曝光以形成抗蝕膜模圖的狀 態。第8圖中，22為比步進機之光源波長為大的線幅之抗 银膜圖’ 2 3表示為步進機之光源波長以下之微細的抗银膜 模圖。如上述以最適焦點將遮膜曝光時，以習用的方法亦 可形成大約為忠實於遮膜之模圖的抗蝕膜模圖。 第9圖表示依習用的亨法於底板層21上用费走機而^ 稍許偏離焦點的狀態將遮膜曝光以形成抗飯膜模肩的狀 態。第9圖中<22’為表示_比步進機之光源波長為大之線中5 的抗银膜模圖，23’表示為步進機之光源波長以下之微細 的抗银膜模圖。如上述以偏雛隼點的狀態將.遽—膜·曝先時， 對於形成此步機冬—先.源波長為大的線幅之模圖22,時雖 無問題，然於形成比步進機之-光/源波f更、微叙_的、抗無媒模 圖2 3’時，則發生模圖的r線幅變細的問題。 乂 ' 第10圖為說明上述狀態表示抗蝕膜模圖的尺寸與焦點 偏離的關係。如第10圖之線22a所示’於形成模圖尺寸較 大的抗蝕膜模圖時.，雖然步進機的焦點稍許發生偏離時， 模圖尺寸亦不變動，然而如第10圖之曲線2 3a所示，於带449799 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a semiconductor device having a fine pattern and a method for manufacturing the same. The details are about LS I semiconductor elements, liquid crystal display panels, and the like. The method for forming a resist film pattern during microfabrication is more specifically a method for forming a fine resist film pattern with high accuracy. [Conventional Technology] Fig. 8 shows a state where a mask is exposed on a substrate layer 21 with a stepper at an optimal focus according to a conventional method to form a resist film pattern. In FIG. 8, 22 is a silver film with a larger width than the light source wavelength of the stepper. The silver film is shown in FIG. When the mask is exposed with the optimum focus as described above, a conventional resist method can also be used to form a resist film pattern that is approximately faithful to the mask pattern. FIG. 9 shows a state where the mask is exposed on the floor layer 21 according to the conventional Henfa method, and the mask is slightly out of focus to form a state of a film-resistant film shoulder. In Fig. 9, < 22 'is a pattern of anti-silver film showing 5 in the line whose wavelength of light source is larger than that of the stepper, and 23' is a pattern of fine anti-silver film below the wavelength of the light source of the stepper . As described above, in the state of the partial pupal point, the film is exposed. For the formation of this step machine, the pattern of the line width with a large source wavelength is shown in Figure 22. Although there is no problem, it will form a specific step. When the machine-light / source wave f is more, micro-synthetic, anti-medialess mode Fig. 2 3 ', the problem that the r line width of the mode image becomes thinner occurs.乂 'FIG. 10 is a diagram illustrating the relationship between the size of the resist film pattern and the focus deviation from the above description. As shown by line 22a in FIG. 10 'When forming a resist film pattern with a large pattern size, although the focus of the stepper slightly deviates, the pattern size does not change, but as shown in FIG. 10 Curve 2 3a shows
4 49 79 9 五、發明說明（2) 成模圖尺寸為步進機之光源波長以下的微細之抗蝕膜模圖 時’如步進機之焦點發生偏離則所形成模圖尺寸變動增木 以致無法製成預期的尺寸。 [發明所欲解決的課題] 如上所述，以習用的平版製版技術於形成微細的抗蝕 膜模圖時’存在有無法安定的形成抗蝕膜模圖的問題。 因而本發明以提供於形成曝光波長以下之微細模圖 時’由使用酸的擴散及抗蝕膜之分解等的也曼^構_之抗蝕 膜修飾而安定的形成超過曝光波長之界限的微細之抗蝕膜 模圖之方法為目的β 本發明並以提供使用依上述方法形成之微細抗蝕膜模 圖的半導體裝置之製造方法，以及依該製造方法所製造之 具有微細之模圖的半導體裝置為目的。 / [解決課題的手段] 本發明之半導體裝置的製造方法以包含：於半導體基 板上用'酸觸媒化學放大正型抗蝕膜、形成抗蝕媒模圖的工 声：於具有上述抗钱膜圖之半導體基板的表面上形成含有 酸性成分的有機膜之工序；對於上述有機膜實施熱處理使 上述抗蝕膜模圖之表面層為可溶化於鹼顯像液的工序；以 及對上述熱處理後之有機模與上^抗蝕膜模圖的表面層以 鹼顯像液將其唆去的工序备其特徵者。 本發明之半導體裝置的製造方法並以上述含有酸性成 分之有機膜為使用酸性聚合物（pol ymer)為其特徵者。 本發明之半導體裝置的製造方法又以上壤酸性聚合物4 49 79 9 V. Description of the invention (2) When the size of the resist pattern is smaller than the light source wavelength of the stepper, if the focus of the stepper deviates, the size of the pattern will increase. So that it cannot be made to the expected size. [Problems to be Solved by the Invention] As described above, when a fine resist film pattern is formed by the conventional lithography process, there is a problem that the resist film pattern cannot be formed stably. Therefore, in the present invention, when forming a fine pattern below the exposure wavelength, the formation of a fineness exceeding the limit of the exposure wavelength is stabilized by the modification of the resist film by the diffusion of an acid and the decomposition of the resist film, and the like. The purpose of the present invention is to provide a method of patterning a resist film. The present invention provides a method for manufacturing a semiconductor device using a fine pattern of resist film formed by the above method, and a semiconductor having a fine pattern produced by the method. Device for the purpose. / [Means for Solving the Problem] The method for manufacturing a semiconductor device of the present invention includes: amplifying a positive resist film with an "acid catalyst" on a semiconductor substrate, and forming a working pattern of the resist dielectric pattern; A step of forming an organic film containing an acidic component on the surface of the semiconductor substrate of the film pattern; a step of subjecting the organic film to heat treatment to make the surface layer of the resist film pattern soluble in an alkali developing solution; and after the heat treatment The process of removing the surface layer of the organic mold and the resist film pattern with an alkali developing solution prepares its characteristics. The method for manufacturing a semiconductor device of the present invention is characterized by using an acidic polymer (polymer) as the organic film containing an acidic component. The method for manufacturing a semiconductor device of the present invention is an acidic polymer of soil.
第5頁 449799 五、發明說明（3) 為使用聚丙烯（polyacryl)酸或為聚乙烯楓 (polyvinylsulfone)酸為其特徵者。 本發明之半導體裝置的製造友法又為對於上述含有酸 性成分之有機膜的聚合物以添加酸成分為其特徵者。 本發明之半導體裝置的製造方法以上述聚合物為使用 聚乙烯醇（polyvinyl alcohol )、聚丙烯酸、聚乙婦咽邊烧 酮（polyvinylpyrrolidone)、聚乙烯胺（polyvinylaniine) 、聚乙烯縮醛（1)〇17¥；[1^18(：61；31)之任一為其特徵者。 本發明之半導體裝置的製造方法以上述酸成分為使用 烧基香芽酮（alkylcavone)酸、烷基楓（aikylsulf〇ne) 酸、水揚酸（33 1丨〇71&3以<1)中之任一為其特徵者。 本發明之另一半導體裝置的製造方法以包含：於半導 體基板上用酸觸媒化學放大正型抗蝕膜形咸抗蝕膜模圖的 工序；於具有上述抗蝕膜模圖之上述半導遨基板的表面上 形成由光照射而發生酸之有機膜的工序；對於上述有機膜 實施光照射使其發生酸並實施熱處理以使上述抗蝕膜模圖 的表面層對於鹼顯像液為可溶化的工序；以及於上述光照 射後將上述有機膜與上述抗蝕膜模圖的表面層用鹼顯像液 將其除去的工序為其特徵者。 本發明之半導體裝置的製造方法對於上述光照射為用 照像遮膜選擇的實施為其特徵者。 本發明之半導體裝置的製造方法為以上述由光照射而 發生酸的有機膜為對於聚合物添加光酸發生劑而構成為其 4 49 799Page 5 449799 5. Description of the invention (3) It is characterized by using polypropylene (polyacryl) acid or polyvinylsulfone acid. The method for manufacturing a semiconductor device of the present invention is characterized by adding an acid component to the polymer of the organic film containing an acid component. The manufacturing method of the semiconductor device of the present invention uses the aforementioned polymers as polyvinyl alcohol, polyacrylic acid, polyvinylpyrrolidone, polyvinylaniine, and polyvinyl acetal (1) 〇17 ¥; Any of [1 ^ 18 (: 61; 31) is a feature. The method for manufacturing a semiconductor device of the present invention uses the above-mentioned acid component as an alkylcavone acid, an aikylsulfone acid, and a salicylic acid (33 1 丨 〇71 & 3 to <1) Either of them is characteristic. Another method for manufacturing a semiconductor device according to the present invention includes: a step of chemically enlarging a positive resist film-shaped salt resist pattern on a semiconductor substrate with an acid catalyst; and the semiconductor device having the resist pattern pattern.遨 A step of forming an organic film which generates an acid by light irradiation on the surface of the substrate; performing light irradiation on the organic film to generate an acid, and performing heat treatment so that the surface layer of the resist film pattern is suitable for an alkali developing solution. A step of melting; and a step of removing the organic film and the surface layer of the resist film pattern with an alkali developing solution after the light irradiation; The method for manufacturing a semiconductor device according to the present invention is characterized in that the above-mentioned light irradiation is selected using a photomask. The method for manufacturing a semiconductor device according to the present invention is configured by adding the above-mentioned organic film that generates an acid by light irradiation to a polymer by adding a photoacid generator 4 49 799
五、發明說明（4) 又本發明之半導艘裝置的製造方法為以上述有機膜為 以可溶於純水或為實質上不溶解抗蝕膜模圖之純水與有機 溶劑的混合溶液之聚合物為主成分構成為其特徵者^ 又’本發明之半導體裝置的製造方法以構成上述有機 臈的聚合物為使用聚乙烯醇、聚丙烯酸、聚乙婦哦#院 蜩、聚乙烯胺、聚乙烯縮醛中任一為其特徵者。 又’本發明之半導體裝置的製造方法為以上述光酸發 生劑具有與上述抗蝕膜模圖之感光波長為不同的感光波長 為其特徵者。 4V. Description of the invention (4) The manufacturing method of the semi-guided ship device of the present invention is to use the above organic film as a mixed solution of pure water and organic solvent that is soluble in pure water or is substantially insoluble in the resist film pattern. A polymer whose main component is constituted as a feature ^ Also, the method for manufacturing the semiconductor device of the present invention uses the polymer constituting the organic fluorene as described above by using polyvinyl alcohol, polyacrylic acid, or polyethoxy # 院 蜩, polyvinylamine Any one of the characteristics of polyvinyl acetal. Furthermore, a method for manufacturing a semiconductor device according to the present invention is characterized in that the photoacid generator has a photosensitive wavelength different from the photosensitive wavelength of the resist film pattern. 4
又本發明之半導體裝置的製造方法為以上述光酸發生 劑使用鎩（onium)塩系、重氮苯楓 (diazobenzenesulphone)酸系、重氮笨香芥酮 (diazobenzenecarvone)蜂系、氯甲基三哄 (chloromethyltriazine)系、2,卜萘醌二氨基_4_磺酸酯 中之任一為其特徵者。 又本發明之半導體裝置的製造方法為於上述光昭射以 使用Hg燈之g線、i線、*KrF激元（excimer)雷射為其 者。Furthermore, the method for manufacturing a semiconductor device of the present invention is to use an onium hydrazone system, a diazobenzenesulphone acid system, a diazobenzenecarvone bee system, and chloromethyltris with the photoacid generator. Any one of the chloromethyltriazine system and 2, bnaphthoquinone diamino-4_sulfonate is characterized. In the method for manufacturing a semiconductor device according to the present invention, a g-line, an i-line, and a * KrF excimer laser using an Hg lamp are used for the above-mentioned light exposure.
又’本發明之半導體裝置的製造方法為於上述有機膜 中添加有機塩基性成分為其特徵者。 ^本發明之Μ體裝£的製&方法為以域有機塩基 性成分使用氫氧化四甲錢 (tetramethylammoniumhydroxide)、乙醇胺In addition, a method of manufacturing a semiconductor device of the present invention is characterized by adding an organic fluorene-based component to the organic film. ^ The manufacturing method of the M body pack of the present invention is to use tetramethylammonium hydroxide, ethanolamine as a domain organic fluorene-based component.
4 49 79 9 五、發明說明（5) '---- (ethanolamine)、氨（ammonia)中之任一為其特徵 ，又本發明之半導體裝置的製造方法為~於上述有機膜中 添加界面活性劑為其特徵者。 又本發明之半導體裝置的製造方法對於上述液 以使用氫氧化四甲銨為1至5wt%之鹼水溶液，或為於該驗 水溶液添加lOwt%以下之酒精的溶液為其特徵者。、μ 又本發明之半導體裝置的製造方法為以上述有機膜 形成材料使用純水或用實質上不溶解抗蝕膜模圓的純水與 有機溶劑的混合溶媒為其特徵者。 '、 本發明的半導體裝置為以使用申請專利範圍第I至η 項之任一項的半導體裝置之製造方法製造為其特徵者。 [發明的實施形態] 以下參照圖面說明本發明的實施形態。 (實施形態1 ) ^ 、第1圖表示依本發明之實施形態丨的半導體裝置之製造 方法，即具體的為微細抗韻膜模圖的形成方法與習用方 的比較說明圖。 第1圖的左半部（a)表示本發明之實施形態的抗蝕膜模 圖之形成方法的各工序部分剖面圖，第i圖的右半部表 不習用之用平版製版的抗蝕膜模圖.之形成方法的各工 分剖面圖。 ^首先如於工序1所示，晶圓1為由半導體基板2上形成 段差3而開始 於含有該段差3的半導體基板2上塗布3〇〇〇 至20000的激元用化學放大型正抗蝕膜4。 4497994 49 79 9 V. Description of the invention (5) Any of (ethanolamine) and ammonia (ammonia) is its feature, and the method of manufacturing the semiconductor device of the present invention is to add an interface to the above organic film The active agent is its characteristic. Furthermore, the method for manufacturing a semiconductor device of the present invention is characterized by using an alkaline aqueous solution of 1 to 5% by weight of tetramethylammonium hydroxide or a solution containing 10% by weight or less of alcohol in the test solution. Further, the method for manufacturing a semiconductor device of the present invention is characterized by using pure water as the organic film forming material or a mixed solvent of pure water and an organic solvent that does not substantially dissolve the mold circle of the resist film. 'The semiconductor device of the present invention is characterized by being manufactured using a method of manufacturing a semiconductor device according to any one of claims 1 to η. [Embodiments of the invention] Embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) ^ and Fig. 1 show a method for manufacturing a semiconductor device according to an embodiment of the present invention, specifically, a detailed explanation diagram of a method for forming a fine anti-rhythm film pattern and a conventional one. The left half (a) of FIG. 1 is a cross-sectional view of each step of the method for forming a resist film pattern according to the embodiment of the present invention, and the right half of FIG. I shows a conventional resist film for lithography. Section diagrams of each division of the forming method. ^ First, as shown in step 1, wafer 1 is formed with a step 3 on a semiconductor substrate 2 and starts to apply a chemically amplified positive resist of 3,000 to 20,000 on the semiconductor substrate 2 containing the step 3 Film 4. 449799
五、發明說明（6) 於此在別述塗布正型抗蝕膜4之前對晶圓ι表面 基一矽烷（hexamethy ldisilane)等實施處理 膜4與晶圓!的密著性亦可。又於抗㈣4 可。又於塗布後實施熱處理亦可。 唧上層材亦 其次參照工序2 ,本實施形態1(a)為使用調整為可 成0. 25 #犯之線幡之模圖的遮膜5a( 5 :丨縮小投影露=時 1.25 #ιη線幅）而向激元用化學放大型正抗蝕 施光照射。 避释的貫 於習用方法（b)則為使用調整為可製成〇. 15仁犯之 之模圖的遮膜5b(5:l縮小投影露光時為〇· 75 線幅）而向 激元用化學放大型正抗蝕膜4選擇的實施光照射。 其次於工序3實施顯像處理^於工序2之曝光為對準焦 點位置於半導體基板2之养差3的下部而實施時，依實施形 態1(a)的狀態由於模圖尺寸較大，因此於段差3的上部與 下部均得製成0.25 的抗蝕膜模圖6a。 一方面依習用方法（b)則於段差3下部製成〇.i5em的 抗凝膜模圖6b，而於段差3的上部則製成0.10仁111的抗蝕暝 模圖6c，於模圖的線幅發生變化。 其次如工序4所示，依本實施形態於晶圓1上塗布由聚 丙烯酸構成的樹脂以形成含有酸性成分的有機膜7。 其次於工序5將晶圓1放置於熱板（未圖示）上，對於晶 圓1的有機膜7實施120 °C，60秒的熱處理。由上述熱處理 將有機膜7加熱使酸擴散於抗蝕膜模圖6a的表面層而使抗 餘膜模圖6a的表面層對於驗顯像液為可溶化。如上述於抗 4 49 799 _____ 五、發明說明（7) 蝕膜模圖6a的表面形成可溶化層11。 其次’如工序6所示，用鹼顯像液實施顯像使抗蝕膜 模圖6a的表面層溶解，結果線幅縮小〇.1〇 而製成 0.15#m之抗蝕膜模圖8。 於工序5如提高熱處理溫度，或增加熱處理時間則於 工序6由顯像的溶解量增大’由此線幅的縮小量將增大。V. Description of the invention (6) Here, the surface of the wafer ι is treated with hexamethy ldisilane and the like before the positive-type resist 4 is coated. The adhesion between the film 4 and the wafer may be used. And in anti-㈣4 can be. It is also possible to perform heat treatment after coating.唧 The upper layer material is also followed by step 2. This embodiment 1 (a) is a mask 5a (5: 1.25 reduced projection exposure = time 1.25 # ιη line) adjusted to be able to be 0. 25 # ) And the excitons are irradiated with a chemically amplified positive resist. The conventional method (b) for avoiding the release is to use a mask 5b adjusted to make a model of 0.15 ren (5: 1 when the projection exposure light is reduced to 0.75 line width) to the excitator. The light is selectively irradiated with the chemically amplified positive resist film 4. Next, the development process is performed in step 3. When the exposure in step 2 is performed so that the focal point is located at the lower part of the difference 3 of the semiconductor substrate 2, the state of Embodiment 1 (a) is large because the size of the pattern is large. A resist pattern of 0.25 is formed on both the upper and lower portions of the step 3, as shown in Fig. 6a. On the one hand, according to the conventional method (b), an anti-coagulation film mold of 0.15em is formed on the lower part of the step 3, and a resist mold of 0.10 kernel 111 is formed on the upper part of the step 3 as shown in FIG. 6c. The line width has changed. Next, as shown in step 4, a resin made of polyacrylic acid is coated on the wafer 1 according to this embodiment to form an organic film 7 containing an acidic component. Next, in step 5, the wafer 1 is placed on a hot plate (not shown), and the organic film 7 of the wafer 1 is heat-treated at 120 ° C for 60 seconds. By the above heat treatment, the organic film 7 is heated to diffuse the acid into the surface layer of the resist film pattern 6a, and the surface layer of the resist film pattern 6a is solubilized to the test solution. As mentioned above, the resistance 4 49 799 _____ V. Description of the invention (7) A soluble layer 11 is formed on the surface of the etching film mold 6a. Next, as shown in step 6, development is performed with an alkali developing solution to dissolve the surface layer of the resist film pattern 6a. As a result, the line width is reduced by 0.10 to produce a resist film pattern 0.15 # m. If the heat treatment temperature is increased in step 5 or the heat treatment time is increased, the dissolution amount of the image is increased in step 6 ', so that the amount of line reduction will increase.
於上述實施形態中’其含有酸性的有機膜7可使用酸 性聚合物。亦即其本身為使用酸性之聚合物底的狀態。 該酸性聚合物之較佳例可使用聚丙烯酸或聚乙烯酸。 又對於含有酸性成分的有機膜亦可使用於聚合物添加 酸成分者。亦即聚合物底本身的中性，然以對其添加酸成 分。In the above embodiment, 'the acid-containing organic film 7 may be an acid polymer. That is, it is the state which used the acidic polymer bottom by itself. Preferable examples of the acidic polymer include polyacrylic acid and polyacrylic acid. An organic film containing an acidic component can also be used for polymers containing an acidic component. That is, the polymer base itself is neutral, so that an acid component is added to it.
於此之聚合物之較佳例可使用聚乙烯醇、聚丙烯酸、 聚乙烯哦娱*_、聚乙煉胺、聚乙缔縮醒·中之任一種。 又用於添加在上述聚合物的酸成分之較佳例可使用烧 基香芽酮酸、院基楓酸、水楊酸中之任一種。 使用於有機膜7之形成材料的溶液之較佳例可使用純 水，或以不溶解抗银膜模圖之程度的純水與有機溶劑之混 合溶媒。 另於有機膜7中’由添加氫氧化四曱錄、乙醇胺、氨Preferable examples of the polymer used herein may be any of polyvinyl alcohol, polyacrylic acid, polyethylene *, polyethylene amine, and polyethylene. Preferable examples of the acid component to be added to the polymer include any one of succinic benzoic acid, nosoylfengeic acid, and salicylic acid. As a preferable example of the solution of the material for forming the organic film 7, pure water or a mixed solvent of pure water and an organic solvent to such an extent that the pattern of the anti-silver film is not dissolved can be used. In addition, in the organic film 7 ′, tetrahydrofuran hydroxide, ethanolamine, and ammonia are added.
等有機塩基性成分可提高有機膜7的成膜性並圖得酸擴散 長度的抑制Q 該有機塩基性成分之較佳例可使用氫氧化四甲銨、乙 醇胺、氨中之任一種。The organic fluorene-based component can improve the film-forming property of the organic film 7 and suppress the acid diffusion length Q. A preferable example of the organic fluorene-based component can be any of tetramethylammonium hydroxide, ethanolamine, and ammonia.
第10頁 Λ , 4 u 9 7 9 9 44S799 五、發明說明（8) 膜性，於有機膜7中可添加界面活性劑以$高有"^膜7的成 再則對於鹼顯像液之較佳例可使用氫氧化四甲銨之^Page 10 Λ, 4 u 9 7 9 9 44S799 V. Description of the invention (8) Membrane property, a surfactant can be added to the organic film 7 to increase the quality of the film 7 for alkaline imaging solution For a preferred example, tetramethylammonium hydroxide can be used.
Wt%的鹼水溶液，或為對該鹼水溶液添加丨〇以 酒精量。 其次說明對有機膜7實施熱處理使抗蝕膜模圖6之表面 廣為可溶化於鹼顯液的結構。 如第2圖（a)之模式的表示，於激元用化學放大型正抗 银骐其樹知底4a為與保護基4b結合而成為對於驗的難溶 性°然對其實施熱處理使產生的酸發生作用，則如第2圖 (b)所示，樹脂底4a與保護基41)的結合被切斷而成為對鹼 具可溶性β由於此，只有受到酸性處理之抗蝕膜模圖的表 面層成為對於驗溶液具可溶性，即由鹼顯像液的處理可使 抗蝕膜表面層溶解而使抗蝕膜模圖變細。 如以上的說明，依本實施形態首先為於半導體基 用酸觸媒化學放大正型抗儀膜之通常的照像製版技街，上 抗蝕膜模圖。其次於前述模圖上塗布含有酸性成分的开^成 膜，使發生的酸擴散於抗蝕膜模圖中，而由其酸觸媒有機 使抗蝕膜模圖（抗蝕膜之遺留部分）的表面層對於驗顯2用 具有可溶性。其後將前述有機膜與前述可溶化層用故 液 液將其剝離而使當初形成的抗蝕膜模圖（抗钱膜之遗 > 分）變細，由而可製成微細的抗姓膜模圖。 亦即由上述可安定的形成露光波長以下之微 449799 五、發明說明（9) — ------ 1 — " 能述的說明中為以半導體基板2上形成抗蝕模圖的狀 =二二二然而於半導體裝置之製造的抗餘膜模圖之形成則 ^導體基板上，例如亦可形成在碎氧化膜等的絕緣 /报能或多結晶石夕膜、金屬膜等各種的導電膜上。本實施 為可適用於上述任一種於底板膜上形成抗蝕膜的狀 ^ 士說明書中之「半導體基板上」a意指包含上述所有 狀態者。Wt% alkaline aqueous solution, or the amount of alcohol added to the alkaline aqueous solution. Next, a description will be given of a structure in which the surface of the resist film pattern 6 is widely dissolved in an alkali solution by subjecting the organic film 7 to heat treatment. As shown in the pattern of Fig. 2 (a), the chemically amplified positive anti-silver maggot Yu Yuyuan uses its tree base 4a in combination with the protective group 4b to become insoluble for the test. However, it is produced by heat treatment. As shown in Fig. 2 (b), when the acid acts, the bond between the resin base 4a and the protective group 41) is cut to become soluble in alkali. Because of this, only the surface of the resist film pattern subjected to acid treatment The layer becomes soluble in the test solution, that is, the treatment of the alkali developing solution can dissolve the surface layer of the resist film and make the resist film pattern thinner. As described above, according to this embodiment, a resist film pattern is first applied to a conventional photoengraving technique for chemically enlarging a positive type resist film on a semiconductor substrate with an acid catalyst. Next, an open film containing an acidic component is coated on the aforementioned pattern to diffuse the generated acid in the pattern of the resist film, and the pattern of the resist film is organically formed by the acid catalyst (residual part of the resist film). The surface layer is soluble for inspection 2 use. Thereafter, the organic film and the solubilized layer are separated from each other by the liquid and liquid, and the pattern of the resist film (resistance of anti-money film) formed at first is thinned, so that a fine anti-surname can be made Film pattern. That is, from the above-mentioned stable formation of a micron below the dew-light wavelength 449799 V. Description of the invention (9) — ------ 1 — " In the description that can be described, a resist pattern is formed on the semiconductor substrate 2 = 2.2 However, the formation of the anti-residue film pattern in the manufacture of semiconductor devices is ^ on the conductor substrate, for example, it can be formed on the insulation / energy report of a broken oxide film, polycrystalline stone film, metal film, etc. On a conductive film. This embodiment is applicable to any of the above-mentioned forms in which a resist film is formed on the substrate film. "Semiconductor substrate" a in the specification means that it includes all the states described above.
(實施形態2) 第3圖表不依本發明之實施形態2的半導體裝置之製造 方法’即具體的為微細抗蝕膜模圖之形成方法的說明圖， 表示抗蝕膜模圖的形成方法之各工序部分剖面圖。 | 參照第3圖’首先於工序1在半導體基板2上以通常的 照像製版術形成KrF雷射甲酸觸媒化學放大正型抗蝕膜之 〇. 25只m幅L/S的抗蝕膜模圖6。 其次於工序2在含有抗蝕膜模圖6的半導體基板2上用 光照射形成發生酸的有機膜9。換言之為形成含有光酸發 生劑之聚合物構成的膜。其具體例為用含有约1%的萘醌二 氨基4磺酸酯誘導體及聚乙烯吡D洛烷酮為聚合物底的水溶 液用旋塗（spin coating)以形成有機膜9。 其次於工序3對於前述0.25 #in幅L/S之抗姓膜模圖6用 含有只對欲減低細線幅之部分的開口〗〇 a之所需模圖的照 像遮膜10以對有機膜9用Hg燈之i線實施200至1000m j/cm2 的光照射。由此只在有機膜9之受曝光處理的曝光部分為 選擇的產生塩酸成分。(Embodiment 2) The third diagram does not follow the method of manufacturing a semiconductor device according to Embodiment 2 of the present invention, that is, an explanatory diagram specifically showing a method for forming a fine resist film pattern, showing each of the methods for forming a resist film pattern. Process section. Referring to FIG. 3 ', first, in step 1, a KrF laser formic acid catalyst chemically amplified positive resist film is formed on the semiconductor substrate 2 by a normal photolithography process. 0.25 resists of m-frame L / S Model Figure 6. Next, in step 2, the semiconductor substrate 2 containing the resist film pattern 6 is irradiated with light to form an organic film 9 which generates an acid. In other words, a film made of a polymer containing a photoacid generator is formed. A specific example thereof is spin coating using an aqueous solution containing about 1% of a naphthoquinone diamino 4 sulfonate inducer and polyvinylpyrrolidone as a polymer base to form an organic film 9. Secondly, in step 3, for the aforementioned 0.25 #in width L / S anti-surname film pattern, FIG. 6 uses a photomask 10 containing a desired pattern of the portion to reduce the thin line width. 9 Use the i-line of the Hg lamp to irradiate with light of 200 to 1000 mj / cm2. Therefore, only the exposed portion of the organic film 9 which is subjected to the exposure treatment is selected to generate a gallic acid component.
第12頁 “9799 五、發明說明（10) 其次於工序4對於晶圓1用熱板實施60至1 40 °c之約1至 3分鐘的熱處理。由此使產生的酸成分擴散於雷射用酸 觸媒化學放大正型抗蝕膜模圖6 (遺留的模圖）中，並由其 酸觸媒作用使抗蝕膜模圖6(抗蝕膜遺留部分）之表面層為 可溶化於驗顯像液，形成可溶化層1 1。 其次於工序5以鹼顯像液除去有機膜9與可溶化層丨J。 具體的為以氫氧化四甲銨之2· 3 8wt %顯像液將其剝離。其 後為除去剝離後的模圖中之水分等對其實施以1〇〇至13〇〇C 之約1至3分鐘的熱處理。 結果只有與有機膜9之曝光部分接觸的抗蝕模圖6(抗 敍臈遺留部分）的尺寸後退，由而能選擇的形成本 來用KrF激元雷射之照像平板印刷所不能形成的〇.丨5以^ L/0.35#mS之抗蝕膜配線模圖8。 又於本實施形態中，構成有機膜9的聚合物可用對於 以純水，或實質上不溶解抗蝕膜模.圖之純水與有機溶劑的 混合溶媒為可溶的聚合物為其主成分。 再具體言之’構成有機膜9的聚合物可使用實施形態1 之添加酸成分而用的聚合物，以及同樣的聚合物。亦即其 聚合物底本身為中性。其較佳例可使用聚乙烯醇、聚丙烯 酸、聚乙稀π比〇名烷酮、聚乙烯胺、以及聚乙烯縮醛中之任 一種。 .又光酸發生劑所使用之感光波長為與底部之抗蝕膜模 圖的感光波長為不同者。 具體言之’較佳的光酸發生劑可使用鑰塩系、空氣苯"9799" on page 12 5. Description of the invention (10) Next, in step 4, heat treatment is performed on the wafer 1 with a hot plate at a temperature of 60 to 1 40 ° C for about 1 to 3 minutes. The generated acid component is diffused in the laser. The acid resist catalyst was used to chemically enlarge the positive resist film pattern 6 (remaining pattern), and the surface layer of the resist film pattern 6 (remaining portion of the resist film) was dissolved by the acid catalyst. The imaging solution was tested to form a soluble layer 11. Next, in step 5, the organic film 9 and the soluble layer were removed with an alkali imaging solution. J. Specifically, a 2. 3 8 wt% imaging solution with tetramethylammonium hydroxide was used. This was peeled off. Thereafter, in order to remove moisture in the peeled pattern, etc., heat treatment was performed at about 100 to 13,000 ° C. for about 1 to 3 minutes. As a result, only resistance to contact with the exposed portion of the organic film 9 was obtained. The size of the etched figure 6 (resistance to anti-Syrian remnants) has receded, so that it can be selected to form a resist that could not be formed by photolithography using a KrF excimer laser photolithography. 5 ^^ / 0.35 # mS Film wiring pattern Figure 8. Also in this embodiment, the polymer constituting the organic film 9 can be used with pure water or does not substantially dissolve the resist film pattern. The mixed solvent of pure water and organic solvent in the figure is a soluble polymer as its main component. To be more specific, the polymer constituting the organic film 9 can be a polymer added with an acid component according to Embodiment 1, and The same polymer. That is, its polymer base itself is neutral. Preferred examples include polyvinyl alcohol, polyacrylic acid, polyethylene acetone, polyvinylamine, and polyvinyl acetal. Either the photosensitizer uses a photosensitizing wavelength that is different from the photoconductor wavelength of the bottom resist pattern. Specifically, the preferred photoacid generator can use molybdenum and air benzene.
第13頁 “9799 五、發明說明（π) 碉酸系、重氮苯香芥酮酸系、氯甲基三畊，2,1-萘醌二氣 基-4-磺酸酯系中之任一種。 再具體的舉出光酸發生劑之較佳例則可用4-羥基蔡基 二甲基楓三氟甲磺酸塩 (4-hydroxynaphthyldimethylsulqoniumtriqlate)(亦稱 三氟曱院續酸續塩（triqluoromethanesulqonate))、4, 8- 雙羥基萘基二甲基楓三氟曱磺酸塩 (4,8-dihydroxynaphthyldifliethylsulqoniumtriqlate )( 亦稱三氟曱烷磺酸塩、4, 7-雙羥基萘基二甲基楓三氟甲續 酸塩（亦稱三氟甲烷磺酸塩），1,8 -萘二甲醯亞胺二基三氟 甲績酸（l，8-naphthalimidiyltriqiate)(亦稱三氟甲院續 酸塩）、1,8 -萘二甲醯亞胺二基甲苯磺酸 (l，8-naphthalimidiyltosylate)(亦稱甲苯確酸醋 * (toluenesulqonate))、1,8 -萘二曱醯亞胺二基甲續酸塩 (1，8-naphthalimidiylmesylate)(亦稱甲項酸酯 (methanesulqonate))、雙（笨確醯基）重氡甲院 (bis(phenylsulQonye)diazomethane)、雙（4-氣苯讀醯 基）重氮甲烷 (bis(4-chlorophenylsulqonyl)diazomethan)、雙（2,4〜 二甲基苯磺醯基）重氮曱烷 (bi s(2,4-dimethy1pheny1suIqony1)diazomethan)，4-甲 氧基-a -甲苯橫酿氧基亞胺基苯基乙腈（4-me1:noxyl - a -tosyloxyiminophenylacetonitrile)、以及由焦梧朌 (pyrogal 1〇1 )之酯體、沒食子酸之酯體的2，1-蔡醒二氨基"9799 on page 13 V. Description of the invention (π) Any of osmic acid, diazosinic acid, chloromethyl tri-cult, 2,1-naphthoquinone diamino-4-sulfonate One more specific example of a preferred photoacid generator is 4-hydroxynaphthyldimethylsulqonium triqlate (also known as triqluoromethanesulqonate) )), 4, 8-dihydroxynaphthyl dimethyl maple trifluorofluorene sulfonate (4,8-dihydroxynaphthyldifliethylsulqoniumtriqlate) (also known as trifluoronaphthylsulfonium fluorene, 4, 7-dihydroxynaphthyl dimethyl sulfonate Maple trifluoromethanesulfonate (also known as trifluoromethanesulfonate), 1,8-naphthalimidinium diyl trifluoromethane (l, 8-naphthalimidiyltriqiate) (also known as trifluoromethane (Acid hydrazone), 1,8-naphthalimidiimyl ditoluenesulfonic acid (also known as toluenesulqonate), 1,8-naphthalimidiyltosylate 1,8-naphthalimidiylmesylate (also known as methanesulqonate), bis (phenylsulQonye) diazomethane Bis (4-chlorophenylsulqonyl) diazomethan (bis (4-chlorophenylsulqonyl) diazomethan), bis (2,4 ~ dimethylbenzenesulfonyl) diazopine (bi s (2,4-dimethy1pheny1suIqony1 ) diazomethan), 4-methoxy-a-toluene oxyiminophenylacetonitrile (4-me1: noxyl-a-tosyloxyiminophenylacetonitrile), and esters of pyrogal (10) 2,1-Cai Xing Diamino Group of Gallate
第14頁 4 49 79 9 4-磺酸酯化合物等 又光照射則較佳可使用Hg燈之g線或i線或KrF激元素 雷射。 又為與實施形態1同樣的，有機膜的形成材料之溶液 較佳可使用純水或不溶解抗蝕膜模圖之程度的純水與 溶劑的混合溶媒β 又為與實施形態1同樣的，可於有機膜中添加氫氧化 四曱銨、乙醇胺、氨等的有機塩基性成分而提高有機膜的 成膜性並可圖得對於酸擴散長度的抑制。 上述有機塩基.性成分較佳可使用氫氧化四甲兹、乙醇 鍵、氨令之任一種。 又於有機膜中可添加界面活性劑而提高有機膜的成膜 性。 又為與實施形態1同樣的，鹼顯像液較佳可使用氫氧 化四甲銨為1至5wt%的鹼水溶液，或對該鹼水溶液添加 10wt%以下之酒精的溶液。 對於有機膜9實施熱處理而使抗蝕膜模圖6之表面層為 可溶化於鹼顯像液的機構則與實施形態1所說明者相同而 省略其重複說明。 如以上的說明，依本實施形態首先為於半導體基板上 用酸觸媒化學放大正型抗蝕膜之通常的照像製版術形成抗 韻膜模圖。其次於前述模圖上塗布由光照射而產生酸的有 機膜’亦即含有光酸產生劑的有機膜，對其實施光照射發 生酸。然後由熱處理使發生的酸擴散於抗蝕膜模圖之中’P.14 4 49 79 9 4-sulfonate compound etc. It is preferable to use g-line or i-line of Hg lamp or KrF laser. It is also the same as in the first embodiment. The solution of the organic film forming material is preferably pure water or a mixed solvent β of pure water and a solvent that does not dissolve the pattern of the resist film. It is the same as in the first embodiment. Organic fluorene-based components such as tetraammonium hydroxide, ethanolamine, and ammonia can be added to the organic film to improve the film-forming property of the organic film, and the acid diffusion length can be suppressed. As the organic fluorenyl-based component, any of tetramethyl hydroxide, an ethanol bond, and ammonia can be used. A surfactant may be added to the organic film to improve the film forming property of the organic film. In the same manner as in Embodiment 1, the alkali developing solution is preferably an alkali aqueous solution containing 1 to 5 wt% of tetramethylammonium hydroxide or a solution containing 10 wt% or less of alcohol in the alkali aqueous solution. The mechanism of applying heat treatment to the organic film 9 to make the surface layer of the resist film pattern 6 soluble in the alkali developing solution is the same as that described in the first embodiment, and its repeated description is omitted. As described above, according to this embodiment, an anti-rhyme pattern is firstly formed on a semiconductor substrate by using a conventional photolithography process for chemically enlarging a positive resist film with an acid catalyst. Next, an organic film that generates an acid by light irradiation, i.e., an organic film containing a photoacid generator, is applied to the aforementioned pattern, and the light is irradiated to generate an acid. Then the generated acid is diffused in the resist film pattern by heat treatment ’
第15頁 449799Page 15 449799
五、發明說明（13) 並由其酸觸媒作用使抗蝕膜模圖（抗蝕膜之遺留部分）的表 面層為可溶化於鹼顯像液的實施熱處理其後將前述有機 膜與前述可溶化層以鹼顯像液將其剝離而使原來形成的抗 姓膜模圖（抗蚀膜遺留部分）變細。 另於實施光照射之際可使用照像遮膜’由選擇的曝光 而可使抗餘膜模圖（抗蝕膜遺留部分）選擇的變細。 (實施形態3)V. Description of the invention (13) The surface layer of the resist film pattern (residual part of the resist film) is dissolved in an alkali developing solution by the action of its acid catalyst, and then the heat treatment is performed on the organic film and the aforementioned organic film. The solubilized layer was stripped with an alkali developing solution to thin the original anti-surname film pattern (resistive film remaining part). In addition, when the light irradiation is performed, a photomask can be used to make the anti-residual film pattern (residual part of the resist film) thinner by a selected exposure. (Embodiment 3)
第4圖表示依本發明之實施形態4的半導體裝置之製造 方法’即具體的為微細抗蝕膜模圖之形成方法的說明圖， 表示抗姓膜模圖之形成方法之各工序的部分上面圖。 參照第4圖’工序1及工序2為與實施形態2相同而不重 複其說明。FIG. 4 shows a method for manufacturing a semiconductor device according to a fourth embodiment of the present invention, that is, an explanatory diagram specifically showing a method for forming a fine resist film pattern, and shows a part of each step of the method for forming a resist film pattern. Illustration. Referring to Fig. 4 ', step 1 and step 2 are the same as those in the second embodiment, and the description thereof will not be repeated.
其次於；序3用於前；〇. 25仁m幅L/S之抗蝕膜模圖6上 只對於欲使線幅減細的部分設有開口 1 〇 a之含有所需之模 圖的照像遮.膜10以對有機膜9用gg燈的i線實施200至 1 0 0 0 m J / c m2的光照射。Followed by; Sequence 3 is used before; 0.25m / m L / S resist film mold. Figure 6 is provided with an opening 1 〇a containing the required mold pattern only for the portion to be thinned Photomask. The film 10 is configured to irradiate the organic film 9 with light of 200 to 100 m J / c m2 using an i-line of a gg lamp.
於本實施形態為對於圖示3之中央部水平方向的帶狀 部分1 0a實施光照射，對其兩侧之帶狀部分則施以光遮 蔽。由此曝光處理只使曝光的部分為選擇的生成塩酸成 分。 其次於工序4實施與實施形態2同樣的熱處理，於抗钱 膜模圖6的表面形成可溶化層11。 其次於工序5為與實施形態2同樣的以鹼顯像液將有機 膜9及可溶化層11除去，In the present embodiment, light is applied to the strip-shaped portion 10a in the horizontal direction of the central portion in Fig. 3, and the strip-shaped portions on both sides are shielded by light. Thus, the exposure process is performed so that only the exposed portion is selected to generate the acetic acid component. Next, the same heat treatment as in the second embodiment is performed in step 4 to form a solubilized layer 11 on the surface of the anti-money film mold 6. Next, in step 5, the organic film 9 and the solubilized layer 11 are removed with an alkali developing solution in the same manner as in the second embodiment.
第16頁 ά49?99 五、發明說明（14) 結果只有與有機膜9之曝光部分接觸的抗蝕膜模圖 6(抗餘臈遺留部分）的尺寸發生後退〇· 1 ，由此可形成 具有部分的線幅變細的部分12a之抗银膜模圖12。 本實施形態3與先前之實施形態2其光照射用所用遮膜 的模圖不同’所形成的抗蝕膜模圖不同，然處理程序及其 效果則相同而省略重複其後的說明。 其次說明用實施形態1至3之方法所形成的抗银膜模圖 製造半導體裝置的工序》 第5圖表示第1例。第5圖（a)表示於半導體基板2上形 成絕緣膜1 3，再於其上形成多結晶矽膜或鋁膜等的導電膜 14 ’於該導電膜14上用實施形態1的方法形成抗飯膜模圖§Page 16ά49? 99 V. Description of the invention (14) As a result, only the resist film mold in contact with the exposed portion of the organic film 9 is shown in FIG. 6 (residual remaining portion). The anti-silver film of part 12a where the line width becomes thinner is shown in FIG. The third embodiment is different from the previous embodiment 2 in that the pattern of the resist film used for the light irradiation is different. The pattern of the resist film is different. However, the processing procedures and effects are the same, and the subsequent description is omitted. Next, the anti-silver film pattern formed by the methods of Embodiments 1 to 3 will be described. The process of manufacturing a semiconductor device is shown in FIG. 5. FIG. 5 shows a first example. FIG. 5 (a) shows that an insulating film 13 is formed on the semiconductor substrate 2, and a conductive film 14 such as a polycrystalline silicon film or an aluminum film is formed thereon. A resist is formed on the conductive film 14 by the method of the first embodiment. Rice film mold§
的狀態D 如第5圖（b)所示，由於將晶圓1之導電膜14為介由抗 蝕膜模圖8實行蝕刻，因此可形成線幅比曝光波長為狹小 的微細配線模圖14a。例如可安定的形成線幅為〇.l5#m之 配線模圖。 第6圖表示第2例。第6圖（a)表示於半導體基板2上形 成絕緣膜13 ’再於其上形成多結晶矽膜或鋁臈等的導電膜 14 ’於該導電膜14上用實施形態2的方法形成抗蝕膜模圖8 與β的狀態。 如第6圖（b)所示，由於將晶圓1之導電膜14為介由抗 蝕膜模圖8與6實行蝕刻，因此可形成例如線幅為〇.1 5 am 之線幅為微細的配線模圖14a及例如線幅為〇·25 //in之通常 線幅的配線模圖14b =As shown in FIG. 5 (b), since the conductive film 14 of the wafer 1 is etched through the resist film pattern 8, the fine wiring pattern 14a having a narrower line width than the exposure wavelength can be formed. . For example, a wiring pattern with a line width of 0.15 # m can be formed stably. Fig. 6 shows a second example. FIG. 6 (a) shows that an insulating film 13 ′ is formed on the semiconductor substrate 2, and a conductive film 14 such as a polycrystalline silicon film or aluminum hafnium is formed thereon. A resist is formed on the conductive film 14 by the method of the second embodiment. The film molds are shown in Figs. 8 and β. As shown in FIG. 6 (b), since the conductive film 14 of the wafer 1 is etched through the resist film patterns 8 and 6, for example, a fine line width of 0.15 am can be formed. Figure 14a of the wiring pattern and the wiring pattern of a common line width, such as a line width of 0.25 / in, 14b =
第17頁 44^799 五、發明說明（15) 第7圖表示第3例《第7圖（a)’表示於半導體基板2上形 成絕緣膜13，再於其上形成多結晶梦膜或銘膜等的導電膜 14 ’於該導電膜14上用實施形態3的方法形成抗蝕膜圖12 a 的狀態。 如第7圖（b)所示，由於將晶圓1之導電膜14為介由抗 蝕膜模圖12a實行蝕刻，因此可形成部分線幅為變細的配 線.模圖14 a。其後再如第7圖（c)所示，形成廣間絕緣膜 1 5，於該層間絕緣膜1 5中之變細的兩條配線模圖14a之間 形成垂直延伸的導電柱（plug)16a，與形成在層間絕緣膜 15上之配線16b連接。如將本例適用於半導體記憶體則配 線模圖14a成為字元線，而配線16b成為位元線。 於以上說明之第5圖至第7圖的工序後，應當繼續其後 的半導體製造工序，然其為與習知技術相同而於此省略其 說明。 ’ 由以上的方法可製造具有超過曝光波長之界限的線幅 之微細模圖的半導體裝置> [發明的效果] 依據本發明可由酸的擴散，及由抗银膜之分解等之化 學結構對於抗餘膜的修飾而可安定的形成超過曝光波長之 界限的微細之抗蝕膜模圖》 又由使用如上形成的抗餘膜模圖可安定的形成不論為 導電膜或為絕緣膜之超過曝光波長之界限的微細之抗儀膜 模圖，由此形成具有其微細模圖之半導體裝置。 又由通過適當的曝光遮膜以曝光而選擇的形成微細的Page 17 44 ^ 799 V. Description of the invention (15) Figure 7 shows the third example "Figure 7 (a) 'shows the formation of an insulating film 13 on a semiconductor substrate 2 and a polycrystalline dream film or an inscription thereon A conductive film 14 ′ such as a film is formed on the conductive film 14 using the method of Embodiment 3 to form a resist film as shown in FIG. 12 a. As shown in FIG. 7 (b), since the conductive film 14 of the wafer 1 is etched through the resist film pattern 12a, a part of the wiring with a narrower line width can be formed. Mold pattern 14a. Thereafter, as shown in FIG. 7 (c), a wide interlayer insulating film 15 is formed, and a vertically extending conductive plug is formed between the two thinner wiring patterns 15a in the interlayer insulating film 15 16a is connected to a wiring 16b formed on the interlayer insulating film 15. If this example is applied to a semiconductor memory, the wiring pattern 14a becomes a word line, and the wiring 16b becomes a bit line. After the processes of FIG. 5 to FIG. 7 described above, the subsequent semiconductor manufacturing process should be continued, but it is the same as the conventional technique, and its description is omitted here. '' A semiconductor device having a fine pattern of a line width exceeding the limit of the exposure wavelength can be manufactured by the above method> [Effect of the invention] According to the present invention, chemical structures such as diffusion of an acid and resistance to decomposition of a silver film can be used. The resist film can be formed stably to form a fine resist film pattern that exceeds the limit of the exposure wavelength. It can also be formed stably by using the resist film pattern formed as above, whether it is a conductive film or an insulating film. A fine pattern of the anti-resonance film at the boundary of the wavelength, thereby forming a semiconductor device having the fine pattern. Finely formed by selecting through appropriate exposure mask
第18頁 '4 49 799 修正 m 87118976 模圖1 [圖面的簡單說明] 第1圖（a)係奉示本發明實施形態1之辑蝕膜模圖形成 法之各工序的部分剖_面圖。 將抗蝕膜4塗布在棊 使用遮膜5?1，向抗飯 埠行顯像處理工序◊ 在聶圓1上步成有機 對於晶圓1之有機膜7 蠢由驗性顯像液進行 第1囷U)(i)係表示在工序1中 板2之上的工序。 第1圖（a)(2)係表示在工序2中 膜4照射光之工序。 第1圖（a)(3)係表示在工序3中 第1圖（a)(4)係表示在工序4中 膜7之工序。 第1圖（a)(5)係表示在工序5中 進行熱處理之工序。 第1圖（a)(6)係表示在工序6中 顯像，獲致抗蝕膜模圖8之工序。 第1圖Cb)係表示由耆知的微影實施抗蝕膜模圖形成方 法之各工序的部分剖面圖β 第1圖（b)l係表示在工序1中，將抗银膜4塗布在基板2 之上的工序。 第1圖0)2係表示在工序2中，使用遮臈5b，，向抗蝕臈 4照射光之工序。 第1圖（b)3係表示在工序3中，進-行顯像處理之工厚。 苐2圖（a)係表示將保護^基4b結合在批蝕膜之樹脂底4a 的狀態模式圖。Page 18 '4 49 799 Correction m 87118976 Mold figure 1 [Simplified description of the drawing] Figure 1 (a) is a partial cross-section showing each step of the method for forming a patterned etching film pattern according to Embodiment 1 of the present invention. Illustration. The resist film 4 is applied. (The masking film 5? 1 is used to develop an anti-fan port.) Steps are performed on Nie Yuan 1 to form an organic film 7 on the wafer 1. The test film is firstly subjected to the inspection solution. 1 囷 U) (i) represents a step on the plate 2 in the step 1. Fig. 1 (a) (2) shows a step in which the film 4 is irradiated with light in step 2. Fig. 1 (a) (3) shows the step 3 in the step 3 Fig. 1 (a) (4) shows the step of the film 7 in the step 4. Fig. 1 (a) (5) shows a step of performing heat treatment in step 5. Figures 1 (a) and (6) show the steps of developing in step 6 to obtain a resist film pattern 8; FIG. 1Cb) is a partial cross-sectional view showing each step of a method for forming a resist film pattern by a known lithography β. FIG. 1 (b) l shows that in step 1, the anti-silver film 4 is coated on Process on substrate 2. FIG. 1) 2) shows the step of irradiating the resist 4 with light using the mask 5b in the step 2. FIG. 1 (b) 3 shows the thickness of the development processing performed in step 3. Fig. 2 (a) is a schematic diagram showing a state where the protective substrate 4b is bonded to the resin substrate 4a of the batch etching film.
310210.ptc 第19頁 2001.05.17.019 心年·Τ月310210.ptc Page 19 2001.05.17.019 Heart Year · T Month
修正 的狀 4 49 79 87118976 五、發明說明（π) _ 第.2圖（b)德表示切斷樹脂底4a與保護基4b之結合 態模式圖。 ° 第3圖（1)係表示在實施形態2之半導體裝置製造方、 的工序1中，將抗蝕膜模圖6形成在基板2之上的工序。法 第3圖（2)係表示在工序2中’將有機膜b形成在包括 抗触膜模圖6的半導體基扳2之上的不序β 第3圖（3)係表示在工序3中，使用照像遮膜1〇對有 膜9進行光照射之工序》 ^ 第3圖（4)係表示在工序4中，對晶圓1進行熱奉理，在 杬蝕臈模戰6之表面層形成可溶化層π之工序βModified state 4 49 79 87118976 V. Description of the invention (π) _ Fig. 2 (b) De shows the pattern diagram of the state where the resin base 4a and the protective group 4b are cut off. ° FIG. 3 (1) shows a step of forming a resist film pattern 6 on the substrate 2 in step 1 of the semiconductor device manufacturing method according to the second embodiment. Fig. 3 (2) of the method shows the disorder β in which the organic film b was formed on the semiconductor substrate 2 including the anti-contact film mold 6 in step 2 Fig. 3 (3) shows the step 3 The process of using the photomask 10 to irradiate the film 9 with light "^ Figure 3 (4) shows that in step 4, the wafer 1 is thermally treated and the surface of the etching die 6 is etched. Step of forming a soluble layer π layer β
第3圖（5)係表示在工序5中，蝽去有機驊9和可溶化層 1 1之工序。 第4圖（1)係表示在實施形態3之半導體裝置製造方法 工序1中’在基板2上形成抗钱膜模圖6之工序。 ^ 第4圖（2)係表示在工序2中*在包括有抗蝕膜模圖6的 半導體基板2上，形成有機膜9之工序。 第4圖（3 )係表示辛工序3中，對抗蝕膜模圖6使用照像 遮膜10而對有機膜9進行光照射之工序β /第4圖（4)係表示在工序4中，藉由熱處理將可溶化層 Π形成在抗蝕膜模圖6表面之工序。 第4圖C5)係表示在工序5中，除去有機膜9和可溶化層 1 1之工序。 ，第5圖（a)係表示藉由實施形態！之方法，在導電膜14 上形成坑蝕膜模圖8之狀態αFig. 3 (5) shows a step of removing organic hafnium 9 and the soluble layer 11 in step 5. Fig. 4 (1) shows a step of forming the anti-money film pattern on the substrate 2 in the step 1 of the method for manufacturing a semiconductor device according to the third embodiment. ^ FIG. 4 (2) shows a step of forming an organic film 9 on the semiconductor substrate 2 including the resist film pattern 6 in step 2 *. FIG. 4 (3) shows the process β of the photoresist film 10 using the photomask 10 and the organic film 9 in the Xin process 3 / FIG. 4 (4) shows the process 4 The step of forming the solubilized layer Π on the surface of the resist film pattern 6 by heat treatment. Fig. 4C5) shows a step of removing the organic film 9 and the soluble layer 11 in step 5. Figure 5 (a) shows the implementation mode! In this way, a pitted film is formed on the conductive film 14. The state α of FIG. 8
310210.ptc 第20頁 2001.05.17. 020 449799 a 正 β 7 q，號咖18976_年 月 五、發明說明（18) , e 第5圖（b)係表示透過抗蝕膜模圖8將晶圓]之導電膜14 進行姓勒，而形成細配線模圖14a之狀態《> 第6圖（a)係表示在基板2上形成絕緣膜13，再於其上 形成導嚅膜14，然後藉由實施形態2之方法在其上形成杌 蝕膜模圖8和6之狀態。 第6圖（b)係表示藉由透過抗独膜模圖8和6將導電膜14 進行蝕刻，而璀成線寬較細之配線模il4a，和一般綵寬 之配線模圖14b之狀態β 第7圖（a)係表示在基板2上形成絕緣臈13，且在其上 形成導電膜14，並藉由實施形態3之方法在該導電膜14上 形成抗蝕膜模圓12a之狀態。 第7圖（b)係表示藉由透過抗蝕膜模圖12a將晶圓1之導 電膜14進行蝕刻，而形成部分線寬較細之配線模圖14a之 狀態。 第7圖（c)係表示形成層簡絕緣膜1 5，在2條配線模圖 14a之簡形成垂直乏導電柱16a，且與形成在層間絕緣膜15 之上的配線16b連接之狀翹。 第8圖表示依習用的方法，用步進機對準於最適焦點 而以遮膜曝光所形成之抗蝕瑪模圖的狀形態。 第9圖表示依習用蛣方法，用步進機將焦點對準於稍 許偏離的狀態以遮膜曝光形成抗蝕膜模菌的狀態° 第10圖表示抗蝕膜模圖冬尺寸與焦點偏離的關係。 [元件符號之說明] 1 晶圓 2 半導體基板310210.ptc Page 20 2001.05.17. 020 449799 a Positive β 7 q, No. 18976_Year 5, Invention Description (18), e Figure 5 (b) shows the crystal through the resist film. Figure 8 [Circle] of the conductive film 14 is formed, and a thin wiring pattern is formed. FIG. 14 (a) shows that the insulating film 13 is formed on the substrate 2 and the conductive film 14 is formed thereon. The etched film patterns 8 and 6 are formed thereon by the method of the second embodiment. Fig. 6 (b) shows the state of the wiring film il4a with a thinner line width and the common color wiring pattern 14b by etching the conductive film 14 through the anti-single film patterns 8 and 6. β FIG. 7 (a) shows a state where an insulating ridge 13 is formed on the substrate 2, a conductive film 14 is formed thereon, and a resist film circle 12a is formed on the conductive film 14 by the method of the third embodiment. Fig. 7 (b) shows a state where the conductive film 14 of the wafer 1 is etched through the resist film pattern 12a to form a wiring pattern 14a with a thinner line width. FIG. 7 (c) shows the formation of a layered insulating film 15 and vertical conductive pillars 16a formed on the two wiring patterns 14a and connected to the wiring 16b formed on the interlayer insulating film 15. Fig. 8 shows the shape of a resist pattern formed by mask exposure according to a conventional method, using a stepper to aim at the optimum focus. Fig. 9 shows a conventional method, using a stepper to adjust the focus to a slightly deviated state, and expose the mask to form a resist mold. ° Fig. 10 shows the size of the resist mold and the focus deviation. relationship. [Explanation of component symbols] 1 wafer 2 semiconductor substrate
310210.ptc 第20—1頁 2001.05. 18.021 ^4iST9®9. 案號 87118976 年 月 日 修正 . 五、發明說明（19) 3 段差 4 1 、 激元用化學放大型抗蝕膜 4a 樹脂底 4b 保護暴 5a、5b、1 0 遮膜 6、.6a、6b、6c、8、 12 、 12a ' 22 、 22’ 、 23 '23， 抗蝕膜模圖 7 含有酸性的有機膜 9 光照舲形成發生酸的有機膜、 10a 開口 11 可溶化層 13 絕緣膜 14 導電膜 14a、14b配線模圖 15 層間絕緣膜 1 6a導電柱 16b 配線 21 底板層 23a曲線 22a 線310210.ptc Page 20-1. 2001.05. 18.021 ^ 4iST9®9. Case No. 87118976 Rev. Month and Day. V. Description of the invention (19) 3 step difference 4 1, Excimer chemically amplified resist film 4a Resin base 4b protection Exposure 5a, 5b, 1 0 Mask 6, 6, 6a, 6b, 6c, 8, 12, 12a '22, 22', 23'23, resist film mold Figure 7 Organic film containing acidic acid 9 Acid formed by light irradiation Organic film, 10a opening 11 soluble layer 13 insulating film 14 conductive film 14a, 14b wiring pattern Figure 15 interlayer insulating film 1 6a conductive pillar 16b wiring 21 bottom layer 23a curve 22a line
310210.ptc 第20-2頁 2001.05.18.022310210.ptc Page 20-2 2001.05.18.022
Claims (1)
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| Application Number | Priority Date | Filing Date | Title |
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| JP5668698 | 1998-03-09 | ||
| JP13005298 | 1998-05-13 |
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| TW449799B true TW449799B (en) | 2001-08-11 |
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| TW087118976A TW449799B (en) | 1998-03-09 | 1998-11-17 | Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby |
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| KR (1) | KR100280857B1 (en) |
| DE (1) | DE19857094B4 (en) |
| TW (1) | TW449799B (en) |
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| CN109313395A (en) * | 2016-05-13 | 2019-02-05 | 东京毅力科创株式会社 | The critical dimension control carried out by using photo etching |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE10051380C2 (en) * | 2000-10-17 | 2002-11-28 | Advanced Micro Devices Inc | Method for manufacturing a semiconductor device using a shrinking process of a structural feature |
| DE102006051766A1 (en) * | 2006-11-02 | 2008-05-08 | Qimonda Ag | Structured photo resist layer, on a substrate, uses selective illumination with separate acids and bakings before developing |
| JP2011257499A (en) * | 2010-06-07 | 2011-12-22 | Tokyo Ohka Kogyo Co Ltd | Resist pattern forming method and pattern fining agent |
| US9659824B2 (en) | 2015-04-28 | 2017-05-23 | International Business Machines Corporation | Graphoepitaxy directed self-assembly process for semiconductor fin formation |
| US9563122B2 (en) | 2015-04-28 | 2017-02-07 | International Business Machines Corporation | Method to harden photoresist for directed self-assembly processes |
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| EP0492253B1 (en) * | 1990-12-20 | 1997-04-23 | Siemens Aktiengesellschaft | Photolithographic process |
| JP2961975B2 (en) * | 1991-08-06 | 1999-10-12 | 日本電気株式会社 | Method of forming fine pattern |
| JPH0876382A (en) * | 1994-09-08 | 1996-03-22 | Oki Electric Ind Co Ltd | Forming method for resist pattern |
| US6013416A (en) * | 1995-06-28 | 2000-01-11 | Fujitsu Limited | Chemically amplified resist compositions and process for the formation of resist patterns |
| DE19706495B4 (en) * | 1996-07-05 | 2006-04-27 | Mitsubishi Denki K.K. | Method for producing a semiconductor device using finely separated resist patterns |
| US5677223A (en) * | 1996-10-07 | 1997-10-14 | Vanguard International Semiconductor Corporation | Method for manufacturing a DRAM with reduced cell area |
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1998
- 1998-11-17 TW TW087118976A patent/TW449799B/en not_active IP Right Cessation
- 1998-12-10 DE DE19857094A patent/DE19857094B4/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109313395A (en) * | 2016-05-13 | 2019-02-05 | 东京毅力科创株式会社 | The critical dimension control carried out by using photo etching |
| TWI662360B (en) * | 2016-05-13 | 2019-06-11 | 東京威力科創股份有限公司 | Critical dimension control by use of a photo agent |
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| DE19857094B4 (en) | 2004-03-25 |
| DE19857094A1 (en) | 1999-09-23 |
| KR100280857B1 (en) | 2001-04-02 |
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