TW428123B - The half-tone phase shift mask - Google Patents

The half-tone phase shift mask

Info

Publication number
TW428123B
TW428123B TW88122135A TW88122135A TW428123B TW 428123 B TW428123 B TW 428123B TW 88122135 A TW88122135 A TW 88122135A TW 88122135 A TW88122135 A TW 88122135A TW 428123 B TW428123 B TW 428123B
Authority
TW
Taiwan
Prior art keywords
phase shift
tone phase
shift mask
width
photomask substrate
Prior art date
Application number
TW88122135A
Other languages
Chinese (zh)
Inventor
Jin-Lung Lin
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW88122135A priority Critical patent/TW428123B/en
Application granted granted Critical
Publication of TW428123B publication Critical patent/TW428123B/en

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A half-tone phase shift mask, which comprises a photomask substrate, and a half-tone phase shift layer formed on the photomask substrate, it is necessary for the half-tone phase shift layer to make the light passing through the photomask substrate to have a 180 degree phase shift, wherein the half-tone phase shift layer further includes a main feature with the first width, and an assist feature having the second width arranged in parallel with some distances on both sides of the main feature. For example, if the exposure light source is deep UV light, the wafer size is of the first depth is about 0.1-0.15 mu m, the second width is 0.055-0.09 mu m, and the distance between the main feature and the assist feature is 0.22-0.27 mu m.
TW88122135A 1999-12-16 1999-12-16 The half-tone phase shift mask TW428123B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88122135A TW428123B (en) 1999-12-16 1999-12-16 The half-tone phase shift mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88122135A TW428123B (en) 1999-12-16 1999-12-16 The half-tone phase shift mask

Publications (1)

Publication Number Publication Date
TW428123B true TW428123B (en) 2001-04-01

Family

ID=21643403

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88122135A TW428123B (en) 1999-12-16 1999-12-16 The half-tone phase shift mask

Country Status (1)

Country Link
TW (1) TW428123B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI451189B (en) * 2008-04-25 2014-09-01 S&S Tech Co Ltd Half-tone phase shift blankmask, half-tone phase shift photomask and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI451189B (en) * 2008-04-25 2014-09-01 S&S Tech Co Ltd Half-tone phase shift blankmask, half-tone phase shift photomask and manufacturing method thereof

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent