TW347562B - Method of plasma softetch for damaged surface of silicon substrate - Google Patents

Method of plasma softetch for damaged surface of silicon substrate

Info

Publication number
TW347562B
TW347562B TW086106395A TW86106395A TW347562B TW 347562 B TW347562 B TW 347562B TW 086106395 A TW086106395 A TW 086106395A TW 86106395 A TW86106395 A TW 86106395A TW 347562 B TW347562 B TW 347562B
Authority
TW
Taiwan
Prior art keywords
silicon substrate
softetch
plasma
damaged surface
oxide layer
Prior art date
Application number
TW086106395A
Other languages
Chinese (zh)
Inventor
Jyi-Gwo Shieh
Yau-Kae Sheu
Original Assignee
United Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Semiconductor Corp filed Critical United Semiconductor Corp
Priority to TW086106395A priority Critical patent/TW347562B/en
Application granted granted Critical
Publication of TW347562B publication Critical patent/TW347562B/en

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  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

A method of plasma softetch for a damaged silicon surface, which at least comprises the following steps: (a) etching a damaged silicon substrate by a plasma softetch method; (b) depositing an oxide layer on the surface of the damaged silicon substrate; and (c) forming a dry oxide layer thereby forming the dry oxide layer between the oxide layer and the damaged silicon substrate.
TW086106395A 1997-05-14 1997-05-14 Method of plasma softetch for damaged surface of silicon substrate TW347562B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086106395A TW347562B (en) 1997-05-14 1997-05-14 Method of plasma softetch for damaged surface of silicon substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086106395A TW347562B (en) 1997-05-14 1997-05-14 Method of plasma softetch for damaged surface of silicon substrate

Publications (1)

Publication Number Publication Date
TW347562B true TW347562B (en) 1998-12-11

Family

ID=58263984

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086106395A TW347562B (en) 1997-05-14 1997-05-14 Method of plasma softetch for damaged surface of silicon substrate

Country Status (1)

Country Link
TW (1) TW347562B (en)

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