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Application filed by United Semiconductor CorpfiledCriticalUnited Semiconductor Corp
Priority to TW086106395ApriorityCriticalpatent/TW347562B/en
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Publication of TW347562BpublicationCriticalpatent/TW347562B/en
A method of plasma softetch for a damaged silicon surface, which at least comprises the following steps: (a) etching a damaged silicon substrate by a plasma softetch method; (b) depositing an oxide layer on the surface of the damaged silicon substrate; and (c) forming a dry oxide layer thereby forming the dry oxide layer between the oxide layer and the damaged silicon substrate.
TW086106395A1997-05-141997-05-14Method of plasma softetch for damaged surface of silicon substrate
TW347562B
(en)