TW201941314A - Manufacturing method for semiconductor device, and adhesive film - Google Patents

Abstract

Disclosed is a manufacturing method for a semiconductor device, the method comprising a step for preparing a semiconductor wafer that has an adhesive film in which the adhesive film and a semiconductor wafer are provided in the stated order on a self-adhesive film, a dicing step for dicing the semiconductor wafer that has the adhesive-film and obtaining semiconductor chips that have the adhesive film, and a compression-bonding step for compression-bonding the semiconductor chips that have the adhesive film to a semiconductor substrate. The adhesive film includes a first film and a second film in the stated order from the self-adhesive film, the second film having a 80 DEG C shear viscosity that differs from that of the first film, and the 80 DEG C shear viscosity of the second film being 500 Pa.s or greater.

Description

Manufacturing method of semiconductor device and adhesive film

The present invention relates to a method for manufacturing a conductor device and an adhesive film.

Previously, a silver paste was mainly used for bonding a semiconductor wafer and a semiconductor substrate. However, with the recent miniaturization and integration of semiconductor wafers, miniaturization and miniaturization of the semiconductor substrates used have also begun to be required. On the other hand, when a silver paste is used, problems such as defects in wire bonding caused by exposure of the paste or the inclination of the semiconductor wafer, difficulty in controlling film thickness, and generation of voids may occur.

Therefore, an adhesive film for bonding a semiconductor wafer and a semiconductor substrate has been used in recent years (for example, refer to Patent Document 1). In the case of using an adhesive film including a dicing tape and an adhesive film laminated on the dicing tape, the semiconductor wafer is singulated by attaching the adhesive film to the back surface of the semiconductor wafer and singulating the semiconductor wafer. A semiconductor wafer with an adhesive film can be obtained. The obtained semiconductor wafer with an adhesive film can be attached to a semiconductor substrate via an adhesive film, and can be joined by thermocompression bonding.
[Prior Art Literature]
[Patent Literature]

Patent Document 1: Japanese Patent Laid-Open No. 2007-053240

[Problems to be Solved by the Invention]
However, with the miniaturization and integration of semiconductor wafers, when the adhesive film is hardened, the semiconductor substrate of the semiconductor device may be warped. If the semiconductor substrate is warped, for example, in the sealing step, the semiconductor wafer may be exposed from the sealing material, which may cause electrical failure.

In addition, when using a film over wire (FOW) as a wire-embedded adhesive film or a film over die (FOD) as a wafer-embedded adhesive film, there are further semiconductor substrates. Warp tends to increase. In addition, for these adhesive films, it is required to embed wires, a controller wafer, and the like, so semiconductor wafers with adhesive films may also warp.

This invention is made in view of such a situation, The main objective is to provide the manufacturing method of the semiconductor device which can suppress the curvature of a semiconductor substrate.

[Means for solving problems]
An aspect of the present invention provides a method for manufacturing a semiconductor device, including the step of preparing a semiconductor wafer with an adhesive film, the semiconductor wafer with an adhesive film sequentially having an adhesive film and a semiconductor crystal on an adhesive film. Round; cutting step, dicing a semiconductor wafer with an adhesive film to obtain a semiconductor wafer with an adhesive film; and a crimping step, crimping the semiconductor wafer with an adhesive film to a semiconductor substrate; and from the adhesive film, Then, the film sequentially includes a first film and a second film having a shear viscosity different from that of the first film at 80 ° C. The shear viscosity of the second film at 80 ° C. is 500 Pa · s or more. According to the method of manufacturing such a semiconductor device, it is possible to suppress warpage of the semiconductor substrate.

The thickness of the second film may be 3 μm to 150 μm. The storage elastic coefficient at 150 ° C. of the second film after curing may be 1000 MPa or less.

The semiconductor device can be connected to the semiconductor substrate by wire bonding via a first wire, and the first semiconductor wafer can be crimped to the second semiconductor wafer via a bonding film, thereby bonding the first semiconductor wafer to the first semiconductor wafer. A lead-embedded semiconductor device in which at least a part of the lead is buried in the adhesive film; or a wafer-embedded semiconductor device in which the first lead and the first semiconductor wafer are embedded in the adhesive film. In such a semiconductor device, it is possible to suppress warpage of not only the semiconductor substrate but also the semiconductor wafer (second semiconductor wafer) with an adhesive film.

In another aspect, the present invention provides an adhesive film including a first film and a second film, the second film is laminated on the first film, and the shear viscosity at 80 ° C. is different from that of the first film, and the second The shear viscosity of the film at 80 ° C was 500 Pa · s or more.

The thickness of the second film may be 3 μm to 150 μm. The storage elastic coefficient at 150 ° C. of the second film after curing may be 1000 MPa or less.

The adhesive film may be used in a semiconductor device in which a first semiconductor wafer is connected to a semiconductor substrate by wire bonding via a first wire, and a second semiconductor wafer is crimped to the first semiconductor wafer. Connected to the second semiconductor wafer and buried at least a part of the first wire (that is, FOW use); it can also be used to embed the first wire and the first semiconductor wafer (that is, FOD use).

[Effect of the invention]
According to the present invention, a method for manufacturing a semiconductor device capable of suppressing warpage of a semiconductor substrate can be provided. The manufacturing method of several forms can implement | achieve also suppressing the curvature of the semiconductor wafer with an adhesive film. Moreover, according to this invention, the adhesive film which can be used for such a manufacturing method can be provided.

Hereinafter, embodiments of the present invention will be described with appropriate reference to the drawings. However, the present invention is not limited to the following embodiments.

In this specification, (meth) acrylic acid means acrylic acid or a corresponding methacrylic acid. The same applies to other similar expressions such as (meth) acrylfluorenyl.

<Method for Manufacturing Semiconductor Device>
[Preparation steps]
In this step, a semiconductor wafer with an adhesive film as a cutting target is prepared.

An example of a method for producing an adhesive film will be described. First, an independent adhesive, a first adhesive, and a second adhesive are coated on the substrate film 1, the substrate film 4a, and the substrate film 4b, respectively, to prepare a film 100 including the substrate film 1 and the adhesive film 2 ( Fig. 1), a film 110 including a base film 4a and a first film 3a (Fig. 2 (a)), and a film 120 including a base film 4b and a second film 3b (Fig. 2 (b)). Then, the base film 4a and the base film 4b are peeled from the films 110 and 120, and the 1st film 3a and the 2nd film 3b are bonded together, and the adhesive film 130 is produced (FIG.2 (c)). Then, the film 100 can be laminated in the order of the adhesive film 2, the first film 3a, and the second film 3b in order to obtain an adhesive sheet 200 including the base film 1, the adhesive film 2, and the adhesive film 130 (FIG. 3). The adhesive sheet 200 can also be produced by coating the first adhesive varnish on the film 100 (FIG. 1) and then applying the second adhesive varnish. Note that the substrate film 1 from which the self-adhesive sheet 200 is removed may be referred to as a cut-bond-integrated adhesive film 140 in some cases. Thereafter, a semiconductor wafer 300 with an adhesive film can be obtained by attaching the semiconductor wafer A to the adhesive film 130 (FIG. 4). That is, the semiconductor wafer 300 with an adhesive film obtained in this manner may be referred to as a laminated body including the adhesive film and the semiconductor wafer in this order on the adhesive film.

Examples of the base film 1, the base film 4a, and the base film 4b include a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, and a polymethylpentene film. , Polyimide film and other plastic films. For the base film, surface treatments such as primer coating, ultraviolet (UV) treatment, corona discharge treatment, polishing treatment, and etching treatment may be performed as necessary.

The adhesive film 2 may be formed of a pressure-sensitive adhesive or an ultraviolet-curable adhesive. The thickness of the adhesive film 2 can be appropriately set according to the shape and size of the semiconductor device to be manufactured, and is preferably 1 μm to 100 μm, more preferably 5 μm to 70 μm, and even more preferably 10 μm to 40 μm.

(Then film)
The next film 130 includes a first film 3a and a second film laminated on the first film 3a with a shear viscosity at 80 ° C. different from that of the first film 3a. The shear viscosity at 80 ° C of the second film 3b is 500 Pa · s or more.

The first film 3a and the second film 3b are both thermosetting, and can be formed of a first adhesive and a second adhesive that are in a semi-hardened (B-stage) state and can be completely cured (C-stage) after hardening. . The first film 3a and the second film 3b preferably contain a thermosetting resin (hereinafter sometimes referred to as "(a) component"), a high molecular weight component (hereinafter sometimes referred to as "(b) component"), and an inorganic filler. (Hereinafter sometimes referred to as "(c) component"). The first film 3a and the second film 3b may further contain a coupling agent (hereinafter sometimes referred to as "(d) component") and a hardening accelerator (hereinafter sometimes referred to as "(e) component").

(A) Thermosetting resin From the viewpoint of adhesiveness, the component (a) is preferably a phenol containing an epoxy resin (hereinafter sometimes simply referred to as "(a1) component") and a hardener for epoxy resin. Resin (hereinafter sometimes referred to as "(a2) component").

The component (a1) can be used without particular limitation as long as it has an epoxy group in the molecule. Examples of the component (a1) include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, phenol novolac epoxy resin, and cresol novolac epoxy resin. Bisphenol A novolac epoxy resin, bisphenol F novolac epoxy resin, stilbene epoxy resin, epoxy resin containing triazine skeleton, epoxy resin containing fluorene skeleton, triphenol phenol methane Type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenylaralkyl type epoxy resin, naphthalene type epoxy resin, polyfunctional phenols, anthracene and other polycyclic aromatics Glycidyl ether compounds and the like. These may be used alone or in combination of two or more. Among these, from the viewpoints of the viscosity and flexibility of the film, the (a1) component may be a cresol novolac-type epoxy resin, a bisphenol F-type epoxy resin, or a bisphenol A-type epoxy resin.

The component (a1) may include an epoxy resin having a softening point of less than 30 ° C or a liquid at normal temperature (25 ° C). By including such an epoxy resin, the obtained film can be given flexibility, and the embedding property of a wafer, a lead, or a semiconductor substrate can be further improved, and there is a tendency that warpage due to insufficient embedding can be alleviated.

The component (a1) may include an epoxy resin having a softening point of 50 ° C or higher. In this case, it is preferable to use one having excellent fluidity when softened.

The component (a2) can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of the component (a2) include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol, and / or Novolac-type phenol resins obtained by condensing or co-condensing naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene with formaldehyde-containing compounds under acidic catalysts; allylated bisphenols A. Allylated bisphenol F, allylated naphthyl glycol, phenol novolac, phenols such as phenol and / or naphthols are combined with dimethoxy-p-xylene or bis (methoxymethyl) Phenol aralkyl resin, naphthol aralkyl resin, etc. synthesized by benzene. These may be used alone or in combination of two or more. Among these, the (a2) component may be a phenol aralkyl resin or a naphthol aralkyl resin.

The hydroxyl equivalent of the component (a2) is preferably 70 g / eq or more, and more preferably 70 g / eq to 300 g / eq. If the hydroxyl equivalent of the component (a2) is 70 g / eq or more, the storage elastic coefficient of the film tends to be further improved. If it is 300 g / eq or less, it is possible to prevent defects caused by foaming and outgassing. .

The softening point of the component (a2) is preferably 50 ° C to 200 ° C, and more preferably 60 ° C to 150 ° C. When the softening point of the component (a2) is 200 ° C. or lower, a decrease in compatibility with the epoxy resin tends to be suppressed.

From the viewpoint of hardenability, the ratio of the epoxy equivalent of the (a1) component to the hydroxyl equivalent of the (a2) component (the epoxy equivalent of the (a1) component / the hydroxyl equivalent of the (a2) component) may be 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45. If this equivalent ratio is 0.30 / 0.70 or more, there exists a tendency for sufficient hardenability to be obtained. When the equivalent ratio is 0.70 / 0.30 or less, it is possible to prevent the viscosity from becoming too high and obtain more sufficient fluidity.

The content of the component (a) may be 5 to 70 parts by mass, 10 to 65 parts by mass, or 20 parts by mass based on 100 parts by mass of the total mass of the components (a), (b), and (c). Parts to 60 parts by mass. When the content of the component (a) is 5 parts by mass or more, the elasticity coefficient tends to be improved by crosslinking. When the content of the component (a) is 70 parts by mass or less, the film operability can be maintained, and the shear viscosity and the elastic coefficient tend to fall within a desired range.

(B) The high molecular weight component (b) is preferably one having a glass transition temperature (Tg) of 50 ° C or lower. Examples of the component (b) include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, butadiene resins, and acrylonitrile resins; and such modified bodies.

From the viewpoint of fluidity, the component (b) may include an acrylic resin. Here, the acrylic resin refers to a polymer including a structural unit derived from a (meth) acrylate. The acrylic resin is preferably a polymer containing, as a structural unit, a structural unit derived from a (meth) acrylate having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, and a carboxyl group. The acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylate and acrylonitrile.

The glass transition temperature (Tg) of the acrylic resin may be -50 ° C to 50 ° C or -30 ° C to 30 ° C. When the Tg of the acrylic resin is −50 ° C. or higher, the flexibility of the adhesive tends to be prevented from becoming too high. This makes it easy to cut the film-like adhesive during wafer dicing, and prevents the occurrence of burrs. When the Tg of the acrylic resin is 50 ° C or lower, there is a tendency that the softness of the adhesive can be suppressed from decreasing. Thereby, when a film-shaped adhesive is attached to a wafer, it tends to be easy to fully embed a space | gap. In addition, chipping at the time of dicing due to a decrease in the adhesiveness of the wafer can be prevented. Here, the glass transition temperature (Tg) is a value measured using a differential scanning calorimeter (DSC) (for example, "Thermo Plus 2" manufactured by Rigaku Corporation).

The weight average molecular weight (Mw) of the acrylic resin may be 100,000 to 3 million or 500,000 to 2 million. When the Mw of the acrylic resin is within such a range, the film forming properties, strength, flexibility, and tackiness at the time of the film shape can be appropriately controlled, and the reflow properties can be excellent, and the embedding properties can be improved. In addition, by using an acrylic resin having a low Mw (for example, less than 100,000) and further increasing the addition amount of the acrylic resin having a low Mw (for example, less than 100,000), the embedding property tends to be improved, but after shear viscosity and hardening The storage elastic coefficient tends to be lower. Here, Mw is a value measured by gel permeation chromatography (GPC) and converted using a calibration curve based on standard polystyrene.

Examples of commercially available acrylic resins include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3CSP, HTR-860P-3CSP-30B (all of Nagase (Manufactured by Nagase ChemteX).

The content of the component (b) may be 5 to 95 parts by mass, 5 to 85 parts by mass, or 10 parts by mass based on 100 parts by mass of the total mass of the components (a), (b), and (c). Parts to 80 parts by mass. When the content of the component (b) is 5 parts by mass or more, the shear viscosity of the film at 80 ° C tends to be high.

(C) Inorganic fillers As the component (c), for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, Aluminum borate whiskers, boron nitride, silicon dioxide, etc. These may be used alone or in combination of two or more. Among these, from the viewpoint of adjustment of the melt viscosity, the component (c) may be silicon dioxide.

From the viewpoint of fluidity, the average particle diameter of the component (c) may be 0.01 μm to 1 μm, 0.01 μm to 0.08 μm, or 0.03 μm to 0.06 μm. Here, the average particle diameter refers to a value obtained by conversion from a specific surface area of Brunauer-Emmett-Teller (BET).

The content of the component (c) may be 3 to 80 parts by mass, 3 to 70 parts by mass, or 3 parts by mass based on 100 parts by mass of the total mass of the components (a), (b), and (c). Parts to 60 parts by mass. When the content of the component (c) is 3 parts by mass or more, the shear viscosity and the elastic coefficient tend to be further improved.

(D) Coupling agent (d) The component may be a silane coupling agent. Examples of the silane coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3- (2-amine Ethyl) aminopropyltrimethoxysilane and the like. These may be used alone or in combination of two or more.

(E) The component of the hardening accelerator (e) is not particularly limited and can be used by ordinary users. Examples of the component (e) include imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. These may be used alone or in combination of two or more. Among these, from the viewpoint of reactivity, the component (e) may be imidazoles and derivatives thereof.

Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole Wait. These may be used alone or in combination of two or more.

The first film 3a and the second film 3b may further contain other components. Examples of the other components include pigments, ion trapping agents, and antioxidants.

The content of the (d) component, the (e) component, and other components may be 0 to 30 parts by mass with respect to 100 parts by mass of the total mass of the components (a), (b), and (c).

The first film 3a and the second film 3b can be formed by preparing a first adhesive varnish and a first adhesive containing (a) component to (c) component, and optionally (d) component and (e) component, and a solvent. Two adhesive varnishes are applied to the substrate film, followed by heating and drying to remove the solvent. The first adhesive varnish and the second adhesive varnish can be prepared, for example, by mixing (a) component to (e) component in a solvent and kneading.

Mixing and kneading can be carried out by using an appropriate combination of these dispersers such as a general mixer, a masher, a three-rod roll mill, and a ball mill.

As long as the solvent for producing the first adhesive varnish and the second adhesive varnish is capable of uniformly dissolving, kneading, or dispersing the components described above, a conventionally known one can be used without limitation. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; dimethylformamide, dimethylacetamide, and N-methyl Pyrrolidone, toluene, xylene and the like. In terms of fast drying speed and low price, it is preferable to use methyl ethyl ketone, cyclohexanone, or the like.

As a method of applying the first adhesive varnish and the second adhesive varnish to the substrate film, a known method can be used, and examples thereof include a blade coating method, a roll coating method, a spray coating method, a gravure coating method, and a bar coating. Method, curtain coating method, etc. The conditions for heating and drying are not particularly limited as long as the solvent used is sufficiently volatilized, and for example, heating can be performed at 50 ° C to 150 ° C for 1 to 30 minutes.

The thickness of the first film 3a may be appropriately set according to the shape or size of the semiconductor device to be manufactured, and may be, for example, 1 μm to 200 μm. The thickness of the first film 3a may be 3 μm to 150 μm, or 3 μm to 120 μm. Furthermore, in FOW applications, it is preferably 20 μm to 120 μm, and more preferably 30 μm to 80 μm. In order to embed the wires, it is necessary to ensure a sufficient thickness so that the wires do not contact the wafer. In FOD applications, it is preferably 40 μm to 200 μm, and more preferably 60 μm to 150 μm. In order to embed a wafer (such as a wafer controller), it is important to ensure a sufficient thickness depending on its thickness.

The thickness of the second film 3b may be appropriately set according to the shape or size of the semiconductor device to be manufactured, and may be, for example, 3 μm to 150 μm. The thickness of the second film 3b may be 3 μm to 100 μm, or 3 μm to 50 μm. Furthermore, in FOW applications, it is preferably 3 μm to 150 μm, and more preferably 3 μm to 80 μm. In order to embed the wires, it is necessary to ensure a sufficient thickness so that the wires do not contact the wafer. In FOD applications, it is preferably 3 μm to 150 μm, and more preferably 3 μm to 100 μm. In order to embed a wafer (such as a wafer controller), it is important to ensure a sufficient thickness depending on its thickness.

The thickness of the adhesive film 130 composed of the first film 3a and the second film 3b can be appropriately set according to the shape or size of the semiconductor device to be manufactured, and is preferably 6 μm to 300 μm, and more preferably 10 μm to 250 μm. , And more preferably 20 μm to 200 μm. Furthermore, in FOW applications, it is preferably 40 μm to 250 μm, and more preferably 50 μm to 80 μm. In order to embed the wires, it is necessary to ensure a sufficient thickness so that the wires do not contact the wafer. In FOD applications, it is preferably 60 μm to 250 μm, and more preferably 80 μm to 150 μm. In order to embed a wafer (such as a wafer controller), it is important to ensure a sufficient thickness depending on its thickness.

If the shear viscosity at 80 ° C of the first film 3a is different from the shear viscosity at 80 ° C of the second film 3b, it is not particularly limited. If the shear viscosity at 80 ° C of the first film 3a is higher than the shear viscosity at 80 ° C of the second film 3b, the second film 3b buffers the warping stress and makes it difficult for the warpage of the semiconductor substrate to be transferred to the wafer As a result, there is a tendency that the warpage of the semiconductor substrate is suppressed as a result. If the shear viscosity at 80 ° C. of the second film 3b is lower than the second film 3b, it is difficult for the second film 3b to follow the stress caused by the warpage of the wafer and the semiconductor substrate, and thus the warpage of the semiconductor substrate tends to be suppressed. From the viewpoint of further suppressing the warpage of the semiconductor substrate, the shear viscosity at 80 ° C of the first film 3a is preferably lower than the shear viscosity at 80 ° C of the second film 3b.

The shear viscosity at 80 ° C. of the first film 3 a may be, for example, 500 Pa · s to 30,000 Pa · s. The shear viscosity at 80 ° C. of the first film 3 a may be 500 Pa · s or more, 700 Pa · s or more, or 1000 Pa · s or more. When the shear viscosity at 80 ° C. of the first film 3 a is 500 Pa · s or more, the handleability of the film tends to be more excellent. The shear viscosity at 80 ° C. of the first film 3 a may be 30,000 Pa · s or less, 20,000 Pa · s or less, or 15000 Pa · s or less. When the shear viscosity at 80 ° C. of the first film 3 a is 30,000 Pa · s or less, a wafer, a lead, or a semiconductor substrate can be sufficiently embedded, and warpage tends to be suppressed.

The shear viscosity at 80 ° C. of the second film 3 b is different from that of the first film 3 a. The shear viscosity at 80 ° C of the second film 3b is 500 Pa · s or more. The shear viscosity at 80 ° C of the second film 3b is not particularly limited as long as it satisfies such conditions. For the same reason as described above, from the viewpoint of further suppressing the warpage of the semiconductor substrate, the shear viscosity at 80 ° C of the second film 3b is preferably higher than the shear viscosity at 80 ° C of the first film 3a. .

The shear viscosity at 80 ° C of the second film 3b is 500 Pa · s or more, and may be 3,000 Pa · s or more, 5000 Pa · s or more, 10,000 Pa · s or more, 15000 Pa · s or more, and 20,000 Pa · s. Above, or above 25,000 Pa · s. When the shear viscosity at 80 ° C. of the second film 3 b is 500 Pa · s or more, the handleability of the film tends to be more excellent. The upper limit of the shear viscosity at 80 ° C. of the second film 3 b is not particularly limited, and may be 100,000 Pa · s or less, 70,000 Pa · s, or 50,000 Pa · s or less.

The shear viscosity at 80 ° C. of the first film 3 a and the second film 3 b can be measured, for example, by the method described in the examples.

The shear viscosities at 80 ° C. of the first film 3 a and the second film 3 b can be adjusted by, for example, changing the types and contents of the components contained in these films.

The storage elastic coefficient at 150 ° C of the first film 3a after curing is not particularly limited, and may be 1000 MPa or less, 500 MPa or less, or 300 MPa or less, and may be 10 MPa or more, 15 MPa, or 20 MPa or more . When the storage elastic coefficient at 150 ° C. of the first film 3 a after curing is 1000 MPa or less, the wafer, the lead, or the semiconductor substrate can be sufficiently embedded, and the warpage tends to be suppressed. If the storage elastic coefficient at 150 ° C. of the first film 3 a after curing is 10 MPa or more, it is possible to prevent the film from being squeezed at the time of pressure bonding, and it is possible to suppress exposure from the ends of the wafer.

The storage elastic coefficient at 150 ° C. of the second film 3 b after curing may be 1000 MPa or less. The storage elastic coefficient at 150 ° C. of the second film 3 b after curing may be 500 MPa or less, 100 MPa or less, or 70 MPa or less, and may be 10 MPa or more, 15 MPa or more, or 20 MPa or more. When the storage elastic coefficient at 150 ° C. of the second film 3 b after curing is 1000 MPa or less, there is a tendency that the warpage of the semiconductor substrate or wafer can be further alleviated.

The storage elastic coefficients at 150 ° C. after the first film 3 a and the second film 3 b are cured can be measured, for example, by the method described in the examples.

Next, the film 130 can be laminated on the first film 3a and the second film 3b under a predetermined condition (for example, room temperature (20 ° C) or a heated state) by using a roll laminator, a vacuum laminator, and the like, and the substrate can be removed. The film 4a and the base film 4b were produced.

Next, the film 130 can also be produced by firstly coating the varnish of the first adhesive composition on the substrate film and heating and drying to remove the solvent to produce a first film 3a. The varnish of the second adhesive composition is applied to the film 3a, and the solvent is removed by heating and drying to form a second adhesive film, and the base film is removed.

The semiconductor wafer A is not particularly limited, and for example, a thin semiconductor wafer of 10 μm to 100 μm can be used. In addition, as the semiconductor wafer A, in addition to single crystal silicon, compound semiconductors such as polycrystalline silicon, various ceramics, and gallium arsenide can also be cited.

[Cutting steps]
Thereafter, as shown in FIG. 5, the semiconductor wafer 300 with an adhesive film is cut using, for example, a blade B, and then a cleaning and drying step is added. This cuts the adhesive film 130 to obtain a (singulated) semiconductor wafer with an adhesive film. It is also possible to use a cutter instead of the blade B when cutting. As the blade B, for example, cutting blades NBC-ZH05 series, NBC-ZH series, etc. manufactured by Disco Co., Ltd. can be used. As the cutter, for example, a full automatic dicing saw 6000 series, a semi-automatic dicing saw 3000 series (both manufactured by Disco) can be used. Further, at the time of dicing, a wafer ring (not shown) is arranged around the semiconductor wafer A, and the semiconductor wafer A is fixed via an adhesive film. The attachment surface of the semiconductor wafer A to the adhesive film may be a circuit surface or an opposite surface of the circuit surface.

The size of the semiconductor wafer is preferably 20 mm or less on one side, that is, 20 mm × 20 mm or less. The size of the semiconductor wafer is more preferably 3 mm to 15 mm on one side, and still more preferably 5 mm to 10 mm on one side. Furthermore, the semiconductor substrate also includes a wafer or the same standard.

[UV irradiation step]
It may further include an ultraviolet irradiation step (ultraviolet, UV) of the adhesive film 2 after the cutting step (FIG. 6). Thereby, a part or most of the adhesive film 2 can be polymerized and hardened. The illuminance of ultraviolet irradiation is not particularly limited, but is preferably 10 mW / cm ² to 200 mW / cm ² , and more preferably 20 mW / cm ² to 150 mW / cm ² . The amount of irradiation during ultraviolet irradiation is not particularly limited, but is preferably 50 mJ / cm ² to 400 mJ / cm ² , and more preferably 100 mJ / cm ² to 250 mJ / cm ² .

[Pickup step]
In the pickup step, the semiconductor wafer a to be picked up is picked up by, for example, the suction chuck 5. At this time, the semiconductor wafer a to be picked up may be pushed up from the lower surface of the base film 1 by, for example, a needle bar or the like. If the semiconductor wafer a is picked up in such a manner that the adhesion between the semiconductor wafer a and the adhesive film 130 is higher than the adhesion between the adhesive film 2 and the substrate film 1 and between the adhesive film 130 and the adhesive film 2, Then, the film 130 is peeled while being adhered to the lower surface of the semiconductor wafer a (see FIG. 7).

The adhesion force between the adhesive film 2 and the first film 3a is preferably smaller than the adhesion force between the semiconductor wafer A and the second film 3b. If the adhesion force is such a relationship, peeling between the first film 3a and the second film 3b can be prevented when the wafer is pushed up in the pickup step. When peeling occurs at the interface between the first film 3a and the second film 3b, there is a tendency that the effect of reducing warpage cannot be obtained.

[Crimping step]
Then, the semiconductor wafer a is placed on the semiconductor substrate 6 via the adhesive film 130 and heated. By heating, the adhesive film 130 exhibits sufficient adhesive force, thereby completing the bonding of the semiconductor wafer a and the semiconductor substrate 6 via the cured product 130 c of the adhesive film (FIG. 8). Examples of the semiconductor substrate 6 include support members for mounting a semiconductor wafer, other semiconductor wafers, and the like.

The compression bonding temperature is not particularly limited, but is preferably 50 ° C to 200 ° C, and more preferably 100 ° C to 150 ° C. If the pressure-bonding temperature is high, the adhesive film 3 becomes soft, so that the embedding property tends to be improved. The crimping time is not particularly limited, but is preferably 0.5 to 20 seconds, and more preferably 1 to 5 seconds. The pressure at the time of compression bonding is not particularly limited, but is preferably 0.01 MPa to 5 MPa, and more preferably 0.02 MPa to 2 MPa. In FOW and FOD applications, in order to improve the embedding property, the higher the crimping pressure is set, the better.

[Hardening step]
After the crimping step, a hardening step of hardening the adhesive film 130 is performed. The temperature and time for curing the adhesive film 130 can be appropriately set according to the curing temperature of the components contained in the adhesive film. The temperature can be changed stepwise, and a person having such a mechanism can also be used. The temperature and time may be, for example, 40 ° C to 300 ° C, and may be, for example, 30 minutes to 300 minutes.

＜ Semiconductor device ＞
The aspect of the semiconductor device obtained by the manufacturing method of this embodiment is specifically described using drawings. In addition, semiconductor devices having various structures have been proposed in recent years, and the semiconductor devices obtained by the manufacturing method of this embodiment are not limited to the structures described below.

FIG. 9 is a schematic cross-sectional view showing an embodiment of a semiconductor device. The semiconductor device 400 shown in FIG. 9 is formed by crimping a semiconductor wafer a, which is a semiconductor wafer with a bonding film, to a semiconductor substrate 10 through a bonding film 130, and bonding the semiconductor wafer a with a wire 11 via wires. A semiconductor device which is connected to the semiconductor substrate 10 in a system. In this semiconductor device, the semiconductor wafer a is adhered to the semiconductor substrate 10 by a cured product 130c adhering to the film, and a connection terminal (not shown) of the semiconductor wafer a is electrically connected to an external connection terminal (not shown) via a wire 11. , And sealed by the sealing material 12.

FIG. 10 is a schematic cross-sectional view showing an embodiment of a semiconductor device. The semiconductor device 410 shown in FIG. 10 is a lead-embedded semiconductor device, which is connected to the semiconductor substrate 10 by wire bonding through the first semiconductor wafer a ₁ through the first lead 11 a, and is connected to the first A second semiconductor wafer a ₂ , which is a semiconductor wafer with a bonding film, is crimped onto the semiconductor wafer a ₁ through the bonding film 130, and at least a part of the first lead 11 a is buried in the bonding film 130. In this semiconductor device, the first semiconductor wafer a ₁ is bonded to the semiconductor substrate 10 on which the terminals 13 are formed by a hardened material 130 c ₁ that is adhered to the film, and is further bonded to the first semiconductor wafer a ₁ by the cured material 130c ₂ is followed by a second semiconductor wafer a ₂ . The connection terminals (not shown) of the first semiconductor wafer a ₁ and the second semiconductor wafer a ₂ are electrically connected to the circuit pattern 14 via the first lead wires 11 a and the second lead wires 11 b, and are sealed by the sealing material 12. As described above, in a case where a semiconductor device having a structure in which a plurality of semiconductor wafers are overlapped and a part of a conductive wire needs to be embedded, the manufacturing method can also be preferably used.

11 and 12 are diagrams showing a manufacturing procedure of the semiconductor device shown in FIG. 10. First, the first semiconductor wafer a ₁ with an adhesive film is heat-pressed and bonded to the semiconductor substrate 10 via the adhesive film 130. The first semiconductor wafer a _{1 is} buried by the cured product 130 c ₁ adhering to the film. In this case, other general manufacturing methods may be used. Thereafter, the semiconductor substrate shown in FIG. 11 is obtained by going through a wire bonding step. Next, the second semiconductor wafer a ₂ with the adhesive film is heat-pressed and bonded to the first semiconductor wafer a ₁ via the adhesive film 130. As described above, the semiconductor substrate shown in FIG. 12 is obtained. Thereafter, the semiconductor device shown in FIG. 10 can be obtained by further performing a wire bonding step and a sealing step.

13 is a schematic cross-sectional view showing an embodiment of a semiconductor device. The semiconductor device 500 shown in FIG. 13 is a wafer-embedded semiconductor device. The first semiconductor wafer a ₃ is connected to the semiconductor substrate 10 by wire bonding via a first wire 11 a. On the semiconductor wafer a ₃ , the second semiconductor wafer a ₄ having a larger area than the first semiconductor wafer a ₃ is crimped to the semiconductor wafer with the adhesive film via the bonding film 130, so that the first lead 11 a and the first The semiconductor wafer a _{3 is} embedded in the adhesive film 130. In the semiconductor device 500, the semiconductor substrate 10 is further electrically connected to the second semiconductor wafer a ₄ via the second lead 11 b, and the second semiconductor wafer a _{4 is} sealed by the sealing material 12.

The thickness of the first semiconductor wafer a ₃ may be 10 μm to 170 μm, and the thickness of the second semiconductor wafer a ₄ may be 20 μm to 400 μm _. The thickness of the cured film 130c ₄ of the subsequent film is 20 μm to 200 μm, preferably 30 μm to 200 μm, and more preferably 40 μm to 150 μm. The first semiconductor wafer a ₃ embedded in the cured material 130 _{c 4 of the} adhesive film is, for example, a controller wafer for driving the semiconductor device 500.

The semiconductor substrate 10 may be, for example, an organic substrate having a circuit pattern 14 formed on a surface thereof. The first semiconductor wafer a ₃ is crimped to the circuit pattern 14 via a cured material 130 _{c 3} which is a film, and the second semiconductor wafer a ₄ covers the circuit pattern 14 and the first semiconductor wafer to which the first semiconductor wafer a ₃ is not crimped. The mode of a ₃ , a part of the first lead 11 a and the circuit pattern 14 is pressure-bonded to the semiconductor substrate 10 via a cured object 130 c ₄ which is a film. A hardened body 130c _{4 of the} adhesive film is embedded in the step of the unevenness caused by the circuit pattern 14 on the semiconductor substrate 10. Then, the second semiconductor wafer a ₄ , the circuit pattern 14, and the second lead 11 b are sealed by a resin sealing material 12.

14 to 18 are diagrams showing a manufacturing procedure of the semiconductor device shown in FIG. 13. First, as shown in FIG. 14, a first semiconductor wafer a ₃ with a bonding film is crimped onto a circuit pattern 14 on a semiconductor substrate 10, and the circuit pattern 14 on the semiconductor substrate 10 and the first A semiconductor wafer a _{3 is} electrically bonded. In this case, other general manufacturing methods may be used.

Next, as shown in FIG. 15, a second semiconductor wafer a ₄ with a bonding film having a larger area than the first semiconductor wafer a ₃ is prepared.

The second semiconductor wafer a ₄ with an adhesive film is crimped to the semiconductor substrate 10 to which the first semiconductor wafer a ₃ is bonded and connected via the first wire 11 a. Specifically, as shown in FIG. 16, the second semiconductor wafer a ₄ with an adhesive film is placed so that the first semiconductor wafer a ₃ is covered by the adhesive film, and then, as shown in FIG. 17, the second semiconductor The wafer a _{4 is} crimped to the semiconductor substrate 10, and the second semiconductor wafer a _{4 is} fixed to the semiconductor substrate 10.

Next, as shown in FIG. 18, after the semiconductor substrate 10 and the second semiconductor wafer a ₄ are electrically connected via the second lead 11 b, the circuit pattern 14, the second lead 11 b and the second semiconductor wafer a are sealed by the sealing material 12. ₄ hermetically sealed. The semiconductor device 500 can be manufactured by going through such steps.
[Example]

Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to these examples.

＜ Preparation of adhesive varnish ＞
[Synthesis example A to synthesis example F]
Cyclohexanone was added to a composition containing (a) an epoxy resin and a phenol resin as a thermosetting resin, and (c) an inorganic filler under the product name and composition ratio (unit: part by mass) shown in Table 1, Stir and mix. The acrylic rubber (b) high-molecular-weight component shown in Table 1 is added and stirred, and the (d) coupling agent and (e) hardening accelerator shown in Table 1 are added and stirred until each component becomes The adhesive varnishes of Synthesis Example A to Synthesis Example F were made uniform.

In addition, the symbol of each component in Table 1 means the following.

(Epoxy resin)
YDCN-700-10 (trade name, manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., o-cresol novolac epoxy resin, epoxy equivalent: 209 g / eq)
EXA-830CRP (trade name, manufactured by DIC Corporation, bisphenol F-type epoxy resin, epoxy equivalent: 159 g / eq)
YDF-8170C (trade name, manufactured by Nisshinika Epoxy Manufacturing Co., Ltd., bisphenol F epoxy resin, epoxy equivalent: 156, liquid at normal temperature, weight molecular weight is about 310)

(Phenol resin)
PSM-4326 (trade name, manufactured by Qun Rong Chemical Co., Ltd., phenol novolac resin, hydroxyl equivalent: 105 g / eq)
HE-100C-30 (trade name, manufactured by Air Water Co., Ltd., phenylaralkyl phenol resin, hydroxyl equivalent: 174 g / eq, softening point: 77 ° C)

(Inorganic filler)
R972 (trade name, manufactured by Japan Aerosil Co., Ltd., silicon dioxide, average particle size: 0.016 μm)
SC2050-HLG (trade name, manufactured by Admatechs Co., Ltd., silicon dioxide filler dispersion, average particle size is 0.50 μm)

(High molecular weight component)
HTR-860P-3CSP (trade name, manufactured by Nagase Chemical Co., Ltd., acrylic rubber, weight average molecular weight: 800,000, Tg: 12 ° C)
HTR-860P-3CSP-30DB (trade name, manufactured by Nagase Chemical Co., Ltd., acrylic rubber, weight average molecular weight: 300,000, Tg: 12 ° C)

(Coupling agent)
A-189 (trade name, manufactured by Momentive Performance Materials Japan), γ-mercaptopropyltrimethoxysilane
A-1160 (trade name, manufactured by Momentive Advanced Materials Co., Ltd., γ-ureidopropyltriethoxysilane)

(Hardening accelerator)
2PZ-CN (trade name, manufactured by Shikoku Chemical Industry Co., Ltd., 1-cyanoethyl-2-phenylimidazole)

[Table 1]

＜ Making a film ＞
(Production of Film A)
The adhesive varnish of Synthesis Example A was filtered using a 100-mesh filter, and vacuum-defoamed. As a base film, a polyethylene terephthalate (PET) film having a thickness of 38 μm which had been subjected to a mold release preparation was prepared, and the adhesive varnish after vacuum defoaming was applied to the PET film. The applied adhesive varnish was heat-dried in two stages of 5 minutes at 90 ° C and 5 minutes at 140 ° C. After heating and drying, the PET film was peeled to obtain a film A in a B-stage state. In this film A, the application amount of the adhesive varnish was adjusted to produce films having different thicknesses. Films with a thickness of 10 μm, 20 μm, 40 μm, 100 μm, 120 μm, and 130 μm were set as Film A-10, Film A-20, Film A-40, Film A-100, Film A-120 and Film A-130.

(Measurement of Shear Viscosity of Film A)
The shear viscosity was measured using ARES (manufactured by Rheometric Scientific). A measurement sample was produced by bonding a viscous film (manufactured by Hitachi Chemical Co., Ltd.) to the film A so that the thickness became 160 μm at 70 ° C., and punching the film to a diameter of 9 mmf. The measurement was performed by increasing the temperature at a temperature increase rate of 5 ° C / min while applying a strain of 5% to the measurement sample, and the value at 80 ° C was set as the shear viscosity at 80 ° C. The shear viscosity of the film A at 80 ° C was 2000 Pa · s.

(Measurement of storage elastic coefficient of film A after hardening)
The storage elastic coefficient was measured using a dynamic viscoelasticity measuring device (manufactured by Rheology Co., Ltd., trade name: DVE Rheospectra). The measurement sample was prepared by bonding a viscous film (manufactured by Hitachi Chemical Co., Ltd.) to the film A so that the thickness became 160 μm at 70 ° C., and processing it into a strip having a width of 4 mm. A differential scanning calorimeter (DSC) was used to harden it at a reaction rate of 100%. About the produced measurement sample, the storage elasticity coefficient from room temperature to 270 ° C at a heating rate of 10 ° C / min was measured, and the value at 150 ° C was the storage elasticity coefficient at 150 ° C after curing. The storage elastic coefficient at 150 ° C of the cured film A was 54 MPa.

(Fabrication of Film B)
Except that the adhesive varnish of Synthesis Example A was changed to the adhesive varnish of Synthesis Example B, Film B was obtained in the same manner as in the production of Film A. In this film B, a film B-120 having a thickness of 120 μm was prepared. The shear viscosity of the film B at 80 ° C was 1200 Pa · s, and the storage elastic coefficient of the film B at 150 ° C after curing was 31 MPa.

(Fabrication of Film C)
Except that the adhesive varnish of Synthesis Example A was changed to the adhesive varnish of Synthesis Example C, Film C was obtained in the same manner as in the production of Film A. In this film C, a film C-120 having a thickness of 120 μm was produced. The shear viscosity at 80 ° C of Film C was 9000 Pa · s, and the storage elastic coefficient at 150 ° C of Film C after hardening was 160 MPa.

(Fabrication of Film D)
Except that the adhesive varnish of Synthesis Example A was changed to the adhesive varnish of Synthesis Example D, Film D was obtained in the same manner as in the production of Film A. In this film D, the application amount of the adhesive varnish was adjusted to produce films having different thicknesses. Films having a thickness of 10 μm, 20 μm, and 40 μm were set as Film D-10, Film D-20, and Film D-40, respectively. The shear viscosity of the film D was 28000 Pa · s, and the storage elastic coefficient of the film D at 150 ° C. was 6 MPa.

(Production of Film E)
Except that the adhesive varnish of Synthesis Example A was changed to the adhesive varnish of Synthesis Example E, Film E was obtained in the same manner as in the production of Film A. In this film E, a film E-10 having a thickness of 10 μm was produced. The shear viscosity of the film E at 80 ° C. was 7400 Pa · s, and the storage elastic coefficient of the film E at 150 ° C. was 760 MPa.

(Fabrication of film F)
Except that the adhesive varnish of Synthesis Example A was changed to the adhesive varnish of Synthesis Example F, Film F was obtained in the same manner as in the production of Film A. In this film F, a film F-20 having a thickness of 20 μm was produced. The shear viscosity of the film F at 80 ° C was 14200 Pa · s, and the storage elastic coefficient of the film F at 150 ° C after curing was 20 MPa.

＜ Production of Adhesive Film ＞
[Example 1-1 to Example 1-8 and Comparative Example 1-1 to Comparative Example 1-3]
As shown in Table 2, Table 3, and Table 4, films A to F were used as the first film or the second film. The first film and the second film were bonded together and processed into a circle to obtain an adhesive film. An adhesive film (thickness: 110 μm, manufactured by Hitachi Chemical Co., Ltd.) was bonded to the surface of the first film opposite to the second film, and Examples 1-1 to 1-8 and Comparative Example 1-1 were produced. ~ A cut-and-stick crystal integrated type adhesive film of Comparative Examples 1-3.

[Table 2]

[table 3]

[Table 4]

<Production of Semiconductor Device>
[Example 2-1]
(Fabrication of a semiconductor substrate including a first semiconductor wafer)
A cut-bond-integrated adhesive film including an adhesive film and an adhesive film was prepared (adhesive film: 10 μm thick, film E-10, adhesive film: 110 μm thick, manufactured by Hitachi Chemical Co., Ltd.). A 50 μm-thick semiconductor wafer was laminated on the adhesive film at a step temperature of 70 ° C. to prepare a cut sample.

The obtained cut sample was cut using a full auto dicer DFD-6361 (manufactured by Disco Corporation). The cutting is performed in a stepped manner using two blades, and the cutting blades ZH05-SD3500-N1-xx-DD and ZH05-SD4000-N1-xx-BB (both manufactured by DISCO Corporation) are used. . The cutting conditions were set to 4000 rpm, 50 mm / sec cutting speed, and 3 mm x 3 mm wafer size. During the cutting, the first-stage cutting was performed so that the semiconductor wafer remained approximately 25 μm, and then the second-stage cutting was performed such that an incision of approximately 20 μm was cut into the adhesive film.

Next, a pick-up chuck is used to pick up a semiconductor wafer to be picked up as a first semiconductor wafer (controller wafer). FIG. 19 is a diagram showing a push-up surface of a pickup chuck. As shown in FIG. 19, the pickup chuck 20 used has, for example, a push-up surface 21 of 3 mm × 3 mm, and five push-up pins 22 are arranged at a predetermined interval along a diagonal of the push-up surface 21. When picking up, use the center pin to push up. The pick-up condition is to set the push-up speed to 20 mm / s and the push-up height to 450 μm. The first semiconductor wafer (controller wafer) with an adhesive film was obtained as described above.

Next, using a die bonder BESTEM-D02 (manufactured by Canon Machinery), the first semiconductor wafer with an adhesive film was pressure-bonded to a glass epoxy substrate having a dummy circuit. At this time, the position is adjusted so that the first semiconductor wafer is located in the center of the dummy circuit. In this manner, a semiconductor substrate including a first semiconductor wafer is obtained.

(Production of a second semiconductor wafer with an adhesive film)
The dicing-bonding integrated film of Example 1-1 was prepared, and a 100 μm-thick semiconductor wafer (silicon wafer) was laminated on the second film on the side opposite to the first film at a stage temperature of 70 ° C. Surface to make cut samples.

Using a fully automatic cutter DFD-6361 (manufactured by Disco Corporation), the obtained cut sample was cut. The cutting is performed in a stepped manner using two blades, and the cutting blades ZH05-SD2000-N1-xx-FF and ZH05-SD2000-N1-xx-EE (both manufactured by DISCO Corporation) are used. The cutting conditions were set to a blade rotation speed of 40,000 rpm, a cutting speed of 50 mm / s, and a wafer size of 7 mm × 7 mm. During the cutting, the first-stage cutting was performed so that the semiconductor wafer remained approximately 50 μm, and then the second-stage cutting was performed such that an incision of approximately 20 μm was cut into the adhesive film.

Next, a semiconductor wafer is picked up using a picking chuck. A second semiconductor wafer with an adhesive film was obtained in the same manner as the pickup conditions of the first semiconductor wafer, except that it was pushed up by using five push-up pins.

(Fabrication of semiconductor devices)
The obtained second semiconductor wafer with an adhesive film was crimped to a semiconductor substrate including the first semiconductor wafer. At this time, the position is adjusted so that the second semiconductor wafer is located at the center of the first semiconductor wafer. Then, the semiconductor substrate on which the second semiconductor wafer was pressure-bonded was held at a temperature of 70 ° C for 2 hours by a pressure oven (manufactured by Chiyoda Electric Co., Ltd.), and further held at 150 ° C for 30 minutes. The adhesive film was hardened, thereby fabricating the semiconductor device of Example 2-1.

(Measurement of warpage)
<Warpage amount of semiconductor substrate>
The surface of the semiconductor substrate (the back surface of the second semiconductor wafer) of the semiconductor device of Example 2-1 was manufactured at room temperature (25 ° C) by a laser displacement meter (manufactured by KEYENCE Corporation), LKG80, step (100 μm, measurement range: 7 mm in height, 7 mm in width) were measured. A three-dimensional average plane is calculated from the obtained displacements of the points, and correction is performed so that the points at both ends become zero. The largest difference between the obtained zero point and the displacement obtained by the measurement is taken as the warpage amount, and the warpage amount of the semiconductor substrate is determined. The results are shown in Table 5.

<Warpage amount of the second semiconductor wafer>
The surface of the semiconductor wafer of the second semiconductor wafer of the semiconductor device of Example 2-1 was subjected to a laser displacement meter (manufactured by Keyence Corporation, LKG80, step (step) at room temperature (25 ° C) ) 100 μm, and the measurement range is 7 mm in length and 7 mm in width). A three-dimensional average plane is calculated from the obtained displacements of the points, and correction is performed so that the points at both ends become zero. The largest difference between the obtained zero point and the displacement obtained by the measurement is taken as the warpage amount, and the warpage amount of the second semiconductor wafer is determined. The results are shown in Table 5.

[Example 2-2 to Example 2-6]
Except that the cut-bond-integrated bonding film of Example 1-1 was changed to the cut-bond-integrated bonding film of Examples 1-2 to 1-6 except that it was the same as that of Example 2-1 The semiconductor devices of Examples 2-2 to 2-6 were fabricated in the same manner, and the amount of warpage of the semiconductor substrate and the amount of warpage of the second semiconductor wafer were determined. The results are shown in Tables 5, 6, and 7.

[Comparative Example 2-1]
Comparative Example 2 was produced in the same manner as in Example 2-1 except that the cut-bond-integrated adhesive film of Example 1-1 was changed to a cut-adhered-crystal integrated film of Comparative Example 1-1. -1 semiconductor device, and the amount of warpage of the semiconductor substrate and the amount of warpage of the second semiconductor wafer were determined. The results are shown in Tables 5 and 6.

[table 5]

[TABLE 6]

[TABLE 7]

Compared with the semiconductor device of Comparative Example 2-1, the semiconductor devices of Examples 2-1 to 2-6 can suppress the warpage of the semiconductor substrate and further suppress the warpage of the second semiconductor wafer. In addition, the lower the shear viscosity of the first film, the more the amount of warpage can be reduced. The reason for this is presumably that the first semiconductor wafer has good embedding properties, so that voids around the wafer can be reduced, and warpage due to voids can be suppressed.

<Production of Semiconductor Device>
[Example 2-7]
(Fabrication of semiconductor wafer with adhesive film)
The dicing-bonding integrated film of Example 1-7 was prepared, and a 100 μm-thick semiconductor wafer (silicon wafer) was laminated on the second film on the side opposite to the first film at a step temperature of 70 ° C. Surface to make cut samples.

Using a fully automatic cutter DFD-6361 (manufactured by Disco Corporation), the obtained cut sample was cut. The cutting is performed in a stepped manner using two blades, and the cutting blades ZH05-SD2000-N1-xx-FF and ZH05-SD2000-N1-xx-EE (both manufactured by DISCO Corporation) are used. The cutting conditions were set to a blade rotation speed of 40,000 rpm, a cutting speed of 50 mm / s, and a wafer size of 7 mm × 7 mm. During the cutting, the first-stage cutting was performed so that the semiconductor wafer remained approximately 50 μm, and then the second-stage cutting was performed such that an incision of approximately 20 μm was cut into the adhesive film.

Next, a semiconductor wafer is picked up using a picking chuck. A semiconductor wafer with an adhesive film was obtained in the same manner as the pickup conditions of the first semiconductor wafer, except that the five pins were used to push up.

The obtained semiconductor wafer with an adhesive film was pressure-bonded to a glass epoxy substrate having a dummy circuit. At this time, the position is adjusted so that the semiconductor wafer is located in the center of the dummy circuit. Subsequently, the glass epoxy substrate to which the semiconductor wafer was pressure-bonded was held at 70 ° C for 2 hours in a pressure oven (manufactured by Chiyoda Electronics Co., Ltd.), and further held at 150 ° C for 30 minutes to harden the adhesive film. Thus, the semiconductor device of Example 2-7 was manufactured.

(Measurement of warpage)
The warpage amount of the semiconductor substrate was determined by the same method as the warpage amount of the semiconductor substrate. The results are shown in Table 8.

[Example 2-8 and Comparative Example 2-2, Comparative Example 2-3]
The cut-and-sticky crystal-integrated bonding film of Example 1-7 was changed to the cut-and-sticky crystal-integrated bonding film of Example 1-8 and Comparative Examples 1-2 and Comparative Examples 1-3. In the same manner as in Example 2-7, the semiconductor devices of Example 2-8 and Comparative Example 2-2 and Comparative Example 2-3 were fabricated respectively, and the amount of warpage of the semiconductor substrate was determined. The results are shown in Table 8.

[TABLE 8]

Compared with the semiconductor devices of Comparative Examples 2-2 and 2-3, the semiconductor devices of Examples 2-7 and 2-8 can suppress the warpage of the semiconductor substrate.

From the above, it was confirmed that the method for manufacturing a semiconductor device of the present invention can suppress the warpage of a semiconductor substrate.

1, 4a, 4b‧‧‧ substrate film

2‧‧‧ adhesive film

3a‧‧‧first film

3b‧‧‧Second film

5‧‧‧ attract chuck

6, 10‧‧‧ semiconductor substrate

11‧‧‧ Lead

11a‧‧‧First Lead

11b‧‧‧Second Lead

12‧‧‧sealing material

13‧‧‧Terminal

14‧‧‧Circuit Pattern

20‧‧‧ Pickup Chuck

21‧‧‧ push up

22‧‧‧ Upsell

100, 110, 120‧‧‧ film

130‧‧‧ Adhesive film

130c, 130c ₁ , 130c ₂ , 130c ₃ , 130c ₄ ‧‧‧ hardened

140‧‧‧cut-sticky crystal integrated film

200‧‧‧ Follow-up

300‧‧‧ semiconductor wafer with adhesive film

400, 410, 500‧‧‧ semiconductor devices

A‧‧‧Semiconductor wafer

a‧‧‧Semiconductor wafer

a ₁ , a ₃ ‧‧‧ the first semiconductor wafer

a ₂ , a ₄ ‧‧‧Second semiconductor wafer

B‧‧‧ Blade

UV‧‧‧UV

FIG. 1 is a schematic diagram of a film including a base film and an adhesive film.

FIG. 2 (a) is a schematic diagram of a film including a base film and an adhesive film. FIG. 2 (b) is a schematic diagram of a film including a base film and an adhesive film. Fig. 2 (c) is a schematic diagram of a film.

FIG. 3 is a schematic view of a film.

FIG. 4 is a schematic diagram of a semiconductor wafer with an adhesive film.

FIG. 5 is a schematic diagram showing a cutting step.

FIG. 6 is a schematic diagram showing an ultraviolet irradiation step.

FIG. 7 is a schematic diagram showing a pickup step.

FIG. 8 is a schematic diagram showing a crimping step.

FIG. 9 is a schematic diagram showing an embodiment of a semiconductor device.

FIG. 10 is a schematic diagram showing an embodiment of a semiconductor device.

FIG. 11 is a schematic diagram showing a manufacturing process of a semiconductor device.

FIG. 12 is a schematic diagram showing a manufacturing process of a semiconductor device.

FIG. 13 is a schematic diagram showing an embodiment of a semiconductor device.

FIG. 14 is a schematic diagram showing a manufacturing process of a semiconductor device.

FIG. 15 is a schematic diagram showing a manufacturing process of a semiconductor device.

FIG. 16 is a schematic diagram showing a manufacturing process of a semiconductor device.

FIG. 17 is a schematic diagram showing a manufacturing process of a semiconductor device.

FIG. 18 is a schematic diagram showing a manufacturing process of a semiconductor device.

FIG. 19 is a diagram showing a push-up surface of a collet for picking up.

Claims (10)

A method for manufacturing a semiconductor device includes: A step of preparing a semiconductor wafer with an adhesive film, the semiconductor wafer with an adhesive film sequentially having an adhesive film and a semiconductor wafer on an adhesive film; A dicing step of dicing the semiconductor wafer with an adhesive film to obtain a semiconductor wafer with an adhesive film; and A crimping step of crimping the semiconductor wafer with an adhesive film to a semiconductor substrate; and Starting from the adhesive film, the adhesive film sequentially includes a first film and a second film having a shear viscosity different from the first film at 80 ° C. The shear viscosity at 80 ° C. of the second film is 500 Pa · s or more. The method for manufacturing a semiconductor device according to item 1 of the scope of patent application, wherein the thickness of the second film is 3 μm to 150 μm. The method for manufacturing a semiconductor device according to item 1 or item 2 of the scope of patent application, wherein the storage film has a storage elastic coefficient at 150 ° C. of 1000 MPa or less after the second film is cured. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the semiconductor device is connected to the semiconductor by wire bonding by connecting a first semiconductor wafer through a first wire. A lead-embedded type in which at least a part of the first lead is buried in the bonding film on the substrate and on the first semiconductor wafer by crimping a second semiconductor wafer through the bonding film. Semiconductor device. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the semiconductor device is connected to the semiconductor by wire bonding by connecting a first semiconductor wafer through a first wire. A substrate formed on the first semiconductor wafer and crimping a second semiconductor wafer through the adhesive film to embed the first lead and the first semiconductor wafer in the adhesive film; Wafer-embedded semiconductor device. An adhesive film comprising: First film; and A second film, the second film being laminated on the first film, and having a shear viscosity at 80 ° C. different from that of the first film, The shear viscosity at 80 ° C. of the second film is 500 Pa · s or more. The adhesive film according to item 6 of the scope of patent application, wherein the thickness of the second film is 3 μm to 150 μm. The adhesive film according to item 6 or item 7 of the scope of patent application, wherein the storage elastic coefficient of the second film after curing at 150 ° C. is 1,000 MPa or less. The adhesive film according to any one of claims 6 to 8 of the scope of patent application, which is connected to a semiconductor substrate by wire bonding on a first semiconductor wafer via a first wire, and is connected to the first semiconductor In a semiconductor device formed by crimping a second semiconductor wafer on a wafer, the second semiconductor wafer is crimped and at least a portion of the first wire is buried. The adhesive film according to any one of claims 6 to 8 of the scope of patent application, which is connected to a semiconductor substrate by wire bonding on a first semiconductor wafer via a first wire, and is connected to the first semiconductor In a semiconductor device formed by crimping a second semiconductor wafer on a wafer, the second semiconductor wafer is crimped and the first wire and the first semiconductor wafer are embedded.