TW201936828A - Film-form adhesive, method for producing same, and semiconductor device and method for producing same - Google Patents

Film-form adhesive, method for producing same, and semiconductor device and method for producing same Download PDF

Info

Publication number
TW201936828A
TW201936828A TW108101899A TW108101899A TW201936828A TW 201936828 A TW201936828 A TW 201936828A TW 108101899 A TW108101899 A TW 108101899A TW 108101899 A TW108101899 A TW 108101899A TW 201936828 A TW201936828 A TW 201936828A
Authority
TW
Taiwan
Prior art keywords
film
adhesive
semiconductor element
shaped adhesive
shaped
Prior art date
Application number
TW108101899A
Other languages
Chinese (zh)
Inventor
舛野大輔
中村祐樹
橋本慎太郎
菊地健太
山崎智陽
Original Assignee
日商日立化成股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立化成股份有限公司 filed Critical 日商日立化成股份有限公司
Publication of TW201936828A publication Critical patent/TW201936828A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/46—Structure, shape, material or disposition of the wire connectors prior to the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Dicing (AREA)

Abstract

Disclosed is a film-form adhesive which is used in a semiconductor device in which a first semiconductor element is connected by wire-bonding on a substrate via a first wire, and a second semiconductor element is attached by pressure to the first semiconductor element. The film-form adhesive is used to pressure-attach the second semiconductor element and embed at least part of at least the first wire. The film-form adhesive comprises a first adhesive film and a second adhesive film laminated onto the first adhesive film. The solvent-content of the film-form adhesive does not exceed 1.5% by mass with respect to the total quantity of film-form adhesive, and the shear viscosity of the film-form adhesive at 80 DEG C does not exceed 5000 Pa·s.

Description

膜狀接著劑及其製造方法以及半導體裝置及其製造方法Film-shaped adhesive, manufacturing method thereof, and semiconductor device and manufacturing method thereof

本發明是有關於一種膜狀接著劑及其製造方法以及半導體裝置及其製造方法。The present invention relates to a film-shaped adhesive, a method for manufacturing the same, and a semiconductor device and a method for manufacturing the same.

先前，於半導體晶片與用以搭載半導體晶片的支撐構件的接合中，主要使用銀糊。但是，隨著近年來半導體晶片的小型化及積體化，對於所使用的支撐構件亦開始要求小型化及細密化。另一方面，於使用銀糊的情況下，有時會出現起因於糊的露出或半導體晶片的斜度的於打線接合（wire bonding）時產生的不良、膜厚控制困難、產生空隙等問題。Previously, silver paste was mainly used for bonding a semiconductor wafer to a supporting member for mounting the semiconductor wafer. However, with the recent miniaturization and integration of semiconductor wafers, miniaturization and miniaturization of the supporting members used have also begun to be demanded. On the other hand, when a silver paste is used, problems such as defects in wire bonding caused by exposure of the paste or the inclination of the semiconductor wafer, difficulty in controlling film thickness, and generation of voids may occur.

因此，近年來一直使用用以接合半導體晶片與支撐構件的膜狀接著劑（例如參照專利文獻1）。於使用包括切割帶（dicing tape）及積層於切割帶上的膜狀接著劑的接著片的情況下，藉由於半導體晶圓的背面貼附膜狀接著劑，並藉由切割來使半導體晶圓單片化，而可獲得帶有膜狀接著劑的半導體晶片。所獲得的帶有膜狀接著劑的半導體晶片可經由膜狀接著劑而貼附於支撐構件，並藉由熱壓接而接合。
[現有技術文獻]
[專利文獻]Therefore, in recent years, a film-shaped adhesive for joining a semiconductor wafer and a support member has been used (for example, refer to Patent Document 1). When a bonding sheet including a dicing tape and a film-shaped adhesive layered on the dicing tape is used, the semiconductor wafer is attached by the film-shaped adhesive on the back surface of the semiconductor wafer, and the semiconductor wafer is diced By singulating, a semiconductor wafer with a film-like adhesive can be obtained. The obtained semiconductor wafer with a film-shaped adhesive can be attached to a support member via the film-shaped adhesive, and can be bonded by thermocompression bonding.
[Prior Art Literature]
[Patent Literature]

[專利文獻1]日本專利特開2007-053240號公報[Patent Document 1] Japanese Patent Laid-Open No. 2007-053240

然而，隨著半導體晶片的尺寸變小，而於熱壓接時施加至每單位面積的力變大，有時會產生膜狀接著劑自半導體晶片露出的被稱為滲出（bleed）的現象。However, as the size of a semiconductor wafer becomes smaller, and the force applied per unit area during thermal compression bonding becomes larger, a phenomenon called bleed that a film-shaped adhesive is exposed from the semiconductor wafer may occur.

另外，於將膜狀接著劑用作作為線埋入型膜狀接著劑的線上膜（Film Over Wire，FOW）或作為半導體晶片埋入型膜狀接著劑的晶片上膜（Film Over Die，FOD）的情況下，就提升埋入性的觀點而言，於熱壓接時要求流動性高。因此，有滲出的發生頻率及量進一步增大的傾向。視情況而有時會滲出至半導體晶片上表面，由此而有導致電氣不良或打線接合不良之虞。In addition, it is used as a film over wire (FOW) as a wire-embedded film adhesive or a film over die (FOD) as a semiconductor wafer-embedded film adhesive. In the case of), from the viewpoint of improving the embedding property, high fluidity is required at the time of thermocompression bonding. Therefore, the frequency and amount of exudation tend to increase. It may bleed to the upper surface of a semiconductor wafer depending on circumstances, and there exists a possibility of causing electrical failure or a wire bonding failure.

本發明是鑒於此種情況而成，主要目的在於提供一種於熱壓接時具有良好的埋入性，並且能夠抑制滲出的膜狀接著劑。The present invention has been made in view of such a situation, and a main object thereof is to provide a film-like adhesive that has good embedding properties during thermal compression bonding and can suppress bleeding.

本發明者等人進行努力研究的結果發現，藉由使用將接著膜積層所得的膜狀接著劑，進而調整膜狀接著劑的溶劑含有率及剪切黏度，而可解決所述課題，從而完成本發明。As a result of diligent research, the present inventors have found that the above-mentioned problems can be solved by using a film-shaped adhesive obtained by laminating the film, and then adjusting the solvent content and shear viscosity of the film-shaped adhesive, thereby completing the problem. this invention.

本發明的一側面提供一種膜狀接著劑，其是於將第一半導體元件經由第一導線而以打線接合的方式連接於基板上，並且於第一半導體元件上壓接第二半導體元件而成的半導體裝置中，為了壓接第二半導體元件並且埋入第一導線的至少一部分而使用的膜狀接著劑，其包括第一接著膜及積層於第一接著膜上的第二接著膜，以膜狀接著劑總量為基準，膜狀接著劑的溶劑含有率為1.5質量%以下，且膜狀接著劑的80℃下的剪切黏度為5000 Pa·s以下。根據此種膜狀接著劑，於熱壓接時具有良好的埋入性，並且能夠抑制滲出。One aspect of the present invention provides a film-shaped adhesive, which is formed by connecting a first semiconductor element to a substrate by wire bonding via a first wire, and crimping a second semiconductor element onto the first semiconductor element. In a semiconductor device, a film-shaped adhesive used for crimping a second semiconductor element and burying at least a portion of a first lead includes a first adhesive film and a second adhesive film laminated on the first adhesive film, so that The total amount of the film-shaped adhesive is based on a solvent content of 1.5% by mass or less, and the shear viscosity at 80 ° C. of the film-shaped adhesive is 5,000 Pa · s or less. According to such a film-like adhesive, it has good embedding properties during thermocompression bonding, and can suppress bleeding.

膜狀接著劑的厚度可為3 μm～150 μm。膜狀接著劑的80℃下的儲存彈性係數可為10 MPa以下。The thickness of the film-shaped adhesive may be 3 μm to 150 μm. The storage elastic coefficient of the film-shaped adhesive at 80 ° C. may be 10 MPa or less.

另一側面中，本發明提供一種膜狀接著劑的製造方法，其為製造所述膜狀接著劑的方法，包括：將含有溶劑的第一接著劑組成物的清漆塗佈於基材上，並將所塗佈的第一接著劑組成物的清漆於50℃～150℃下加熱乾燥，製作以第一接著膜總量為基準而溶劑含有率為1.5質量%以下的第一接著膜的步驟；將含有溶劑的第二接著劑組成物的清漆塗佈於基材上，並將所塗佈的第二接著劑組成物的清漆於50℃～150℃下加熱乾燥，製作以第二接著膜總量為基準而溶劑含有率為1.5質量%以下的第二接著膜的步驟；以及將第一接著膜與第二接著膜貼合的步驟。In another aspect, the present invention provides a method for producing a film-shaped adhesive, which is a method for producing the film-shaped adhesive, comprising: applying a varnish of a first adhesive composition containing a solvent to a substrate, And the step of heating and drying the varnish of the applied first adhesive composition at 50 ° C. to 150 ° C. to produce a first adhesive film having a solvent content of 1.5% by mass or less based on the total amount of the first adhesive film. ; Coating the varnish of the second adhesive composition containing the solvent on the substrate, and drying the applied varnish of the second adhesive composition at 50 ° C to 150 ° C to produce a second adhesive film A step of bonding the second adhesive film to the second adhesive film with the total amount as a reference and a solvent content of 1.5% by mass or less;

又一側面中，本發明提供一種半導體裝置，其是將第一半導體元件經由第一導線而以打線接合的方式連接於基板上，並且於第一半導體元件上，經由所述膜狀接著劑而壓接第二半導體元件，從而將第一導線的至少一部分埋入膜狀接著劑中而成。再者，半導體裝置可為第一導線的至少一部分埋入膜狀接著劑中而成的線埋入型的半導體裝置，亦可為第一導線及第一半導體晶片埋入接著膜中而成的晶片埋入型的半導體裝置。In yet another aspect, the present invention provides a semiconductor device in which a first semiconductor element is connected to a substrate by wire bonding via a first wire, and the first semiconductor element is connected to the first semiconductor element via the film-shaped adhesive. The second semiconductor element is crimped, and at least a part of the first lead is buried in the film-shaped adhesive. Furthermore, the semiconductor device may be a line-buried semiconductor device in which at least a portion of the first lead is buried in the film-like adhesive, or a semiconductor device in which the first lead and the first semiconductor wafer are buried in the bonding film. Wafer-embedded semiconductor device.

又一側面中，本發明提供一種半導體裝置的製造方法，其包括：打線接合步驟，於基板上經由第一導線而電性連接第一半導體元件；層壓步驟，於第二半導體元件的單面貼附所述膜狀接著劑；以及黏晶（die bond）步驟，經由膜狀接著劑而壓接貼附有膜狀接著劑的第二半導體元件，藉此而將第一導線的至少一部分埋入膜狀接著劑中。In yet another aspect, the present invention provides a method for manufacturing a semiconductor device, including: a wire bonding step, electrically connecting a first semiconductor element on a substrate via a first wire; a lamination step, on one side of a second semiconductor element Attaching the film-shaped adhesive; and a die bond step, crimping the second semiconductor element to which the film-shaped adhesive is attached via the film-shaped adhesive, thereby burying at least a portion of the first lead Into film adhesive.

根據本發明，可提供一種於熱壓接時具有良好的埋入性，並且能夠抑制滲出的膜狀接著劑。另外，根據本發明，可提供此種膜狀接著劑的製造方法、以及使用此種膜狀接著劑的半導體裝置及其製造方法。According to the present invention, it is possible to provide a film-shaped adhesive which has good embedding properties during thermal compression bonding and can suppress bleeding. In addition, according to the present invention, a method for producing such a film-like adhesive, a semiconductor device using such a film-like adhesive, and a method for producing the same can be provided.

以下，適當參照圖式來對本發明的實施形態進行說明。但，本發明並不限定於以下的實施形態。Hereinafter, embodiments of the present invention will be described with appropriate reference to the drawings. However, the present invention is not limited to the following embodiments.

本說明書中，(甲基)丙烯酸是指丙烯酸或與其對應的甲基丙烯酸。關於(甲基)丙烯醯基等其他的類似表述亦同樣。In this specification, (meth) acrylic acid means acrylic acid or a corresponding methacrylic acid. The same applies to other similar expressions such as (meth) acrylfluorenyl.

[膜狀接著劑]
圖1為表示一實施形態的膜狀接著劑的示意剖面圖。膜狀接著劑10包括：第一接著膜2及積層於第一接著膜2上的第二接著膜4。第一接著膜2及第二接著膜4均為熱硬化性，可將經過半硬化（B階段）狀態且於硬化處理後可呈完全硬化物（C階段）狀態的第一接著劑組成物及第二接著劑組成物成形為膜狀而製作。膜狀接著劑10可藉由將所獲得的第一接著膜2與第二接著膜4層壓而製作。[Film adhesive]
FIG. 1 is a schematic cross-sectional view showing a film-shaped adhesive according to an embodiment. The film-shaped adhesive 10 includes a first adhesive film 2 and a second adhesive film 4 laminated on the first adhesive film 2. The first adhesive film 2 and the second adhesive film 4 are both thermosetting, and the first adhesive composition and the first adhesive composition that can be in a semi-hardened (B-stage) state and can be completely cured (C-stage) after the hardening process and The second adhesive composition is formed into a film shape. The film-shaped adhesive agent 10 can be produced by laminating the obtained first adhesive film 2 and the second adhesive film 4.

構成膜狀接著劑10的第一接著膜2及第二接著膜4較佳為含有熱硬化性樹脂（以下有時簡稱為「（a）成分」）、高分子量成分（以下有時簡稱為「（b）成分」）及無機填料（以下有時簡稱為「（c）成分」）。第一接著膜2及第二接著膜4亦可更含有偶合劑（以下有時簡稱為「（d）成分」）及硬化促進劑（以下有時簡稱為「（e）成分」）。第一接著膜2及第二接著膜4亦可殘存有形成第一接著膜2及第二接著膜4時所使用的溶劑。以膜狀接著劑總量為基準，膜狀接著劑10（第一接著膜2及第二接著膜4）的溶劑含有率為1.5質量%以下。第一接著膜2及第二接著膜4彼此可為相同的膜，亦可為不同的膜，較佳為彼此為相同的膜。The first adhesive film 2 and the second adhesive film 4 constituting the film-shaped adhesive 10 preferably contain a thermosetting resin (hereinafter sometimes referred to as "(a) component") and a high molecular weight component (hereinafter sometimes referred to as "" (B) component ") and an inorganic filler (hereinafter sometimes referred to as" (c) component "). The first adhesive film 2 and the second adhesive film 4 may further contain a coupling agent (hereinafter sometimes referred to as "(d) component") and a hardening accelerator (hereinafter sometimes referred to as "(e) component"). The first adhesive film 2 and the second adhesive film 4 may have a solvent remaining when forming the first adhesive film 2 and the second adhesive film 4. Based on the total amount of the film-shaped adhesive, the solvent content of the film-shaped adhesive 10 (the first adhesive film 2 and the second adhesive film 4) is 1.5% by mass or less. The first adhesive film 2 and the second adhesive film 4 may be the same film or different films, and preferably are the same film.

＜（a）熱硬化性樹脂＞
就接著性的觀點而言，（a）成分較佳為包含環氧樹脂（以下有時簡稱為「（a1）成分」）及可作為環氧樹脂的硬化劑的酚樹脂（以下有時簡稱為「（a2）成分」）。＜ (a) Thermosetting resin ＞
From the standpoint of adhesiveness, the (a) component is preferably a phenol resin (hereinafter sometimes referred to simply as "a1" component ") which can be used as a hardener for the epoxy resin and may be used as a curing agent. "(A2) ingredients").

（a1）成分只要為分子內具有環氧基者則可並無特別限制地使用。作為（a1）成分，例如可列舉：雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、雙酚A酚醛清漆型環氧樹脂、雙酚F酚醛清漆型環氧樹脂、含二環戊二烯骨架的環氧樹脂、二苯乙烯型環氧樹脂、含三嗪骨架的環氧樹脂、含茀骨架的環氧樹脂、三苯酚苯酚甲烷型環氧樹脂、聯苯型環氧樹脂、伸二甲苯基型環氧樹脂、聯苯芳烷基型環氧樹脂、萘型環氧樹脂、多官能苯酚類、蒽等多環芳香族類的二縮水甘油醚化合物等。該些可單獨使用一種或者將兩種以上組合使用。該些中，就耐熱性的觀點而言，（a1）成分可為甲酚酚醛清漆型環氧樹脂、雙酚F酚醛清漆型環氧樹脂、或雙酚A型環氧樹脂。The component (a1) can be used without particular limitation as long as it has an epoxy group in the molecule. Examples of the component (a1) include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, phenol novolac epoxy resin, and cresol novolac epoxy resin. Bisphenol A novolac epoxy resin, bisphenol F novolac epoxy resin, epoxy resin containing dicyclopentadiene skeleton, styrenic epoxy resin, epoxy resin containing triazine skeleton, Epoxy skeleton-containing epoxy resin, triphenolphenol methane epoxy resin, biphenyl epoxy resin, xylyl epoxy resin, biphenylaralkyl epoxy resin, naphthalene epoxy resin, multifunctional Polycyclic aromatic diglycidyl ether compounds such as phenols and anthracene. These may be used alone or in combination of two or more. Among these, from the viewpoint of heat resistance, the component (a1) may be a cresol novolac epoxy resin, a bisphenol F novolac epoxy resin, or a bisphenol A epoxy resin.

（a1）成分的環氧當量可為90 g/eq～300 g/eq、110 g/eq～290 g/eq、或130 g/eq～280 g/eq。若（a1）成分的環氧當量為此種範圍，則有可維持膜狀接著劑的整體強度（bulk intensity）並且確保流動性的傾向。The epoxy equivalent of the component (a1) may be 90 g / eq to 300 g / eq, 110 g / eq to 290 g / eq, or 130 g / eq to 280 g / eq. When the epoxy equivalent of a component (a1) exists in such a range, there exists a tendency for the bulk intensity | strength of a film adhesive to be maintained and fluidity | liquidity to be ensured.

相對於（a）成分、（b）成分及（c）成分的總質量100質量份而言，（a1）成分的含量可為5質量份～50質量份、10質量份～40質量份、或20質量份～30質量份。若（a1）成分的含量為5質量份以上，則有膜狀接著劑的埋入性更良好的傾向。若（a1）成分的含量為50質量份以下，則有可進一步抑制滲出的發生的傾向。The content of the component (a1) may be 5 to 50 parts by mass, 10 to 40 parts by mass, or 100 parts by mass of the total mass of the components (a), (b), and (c). 20 to 30 parts by mass. When the content of the (a1) component is 5 parts by mass or more, the embedding property of the film-shaped adhesive tends to be better. When the content of the component (a1) is 50 parts by mass or less, the occurrence of oozing out tends to be further suppressed.

（a2）成分只要為分子內具有酚性羥基者則可並無特別限制地使用。作為（a2）成分，例如可列舉：使苯酚、甲酚、間苯二酚（resorcin）、鄰苯二酚、雙酚A、雙酚F、苯基苯酚、胺基苯酚等酚類及/或α-萘酚、β-萘酚、二羥基萘等萘酚類與甲醛等具有醛基的化合物於酸性觸媒下縮合或共縮合而獲得的酚醛清漆型酚樹脂；由烯丙基化雙酚A、烯丙基化雙酚F、烯丙基化萘二醇、苯酚酚醛清漆、苯酚等酚類及/或萘酚類與二甲氧基對二甲苯或雙(甲氧基甲基)聯苯所合成的苯酚芳烷基樹脂、萘酚芳烷基樹脂等。該些可單獨使用一種或者將兩種以上組合使用。該些中，就吸濕性及耐熱性的觀點而言，（a2）成分可為苯酚芳烷基樹脂、萘酚芳烷基樹脂、或酚醛清漆型酚樹脂。The component (a2) can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of the component (a2) include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol, and / or Novolac-type phenol resins obtained by condensing or co-condensing naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene with formaldehyde-containing compounds under acidic catalysts; allylated bisphenols A. Allylated bisphenol F, allylated naphthyl glycol, phenol novolac, phenols such as phenol and / or naphthols are combined with dimethoxy-p-xylene or bis (methoxymethyl) Phenol aralkyl resin, naphthol aralkyl resin, etc. synthesized by benzene. These may be used alone or in combination of two or more. Among these, from a viewpoint of hygroscopicity and heat resistance, a (a2) component may be a phenol aralkyl resin, a naphthol aralkyl resin, or a novolak-type phenol resin.

（a2）成分的羥基當量可為80 g/eq～250 g/eq、90 g/eq～200 g/eq、或100 g/eq～180 g/eq。若（a2）成分的羥基當量為此種範圍，則有可保持膜狀接著劑的流動性並且更高地維持接著力的傾向。(A2) The hydroxyl equivalent of the component may be 80 g / eq to 250 g / eq, 90 g / eq to 200 g / eq, or 100 g / eq to 180 g / eq. When the hydroxyl equivalent of (a2) component exists in this range, there exists a tendency for the fluidity | liquidity of a film-form adhesive agent to be maintained and adhesive force to be maintained more.

（a2）成分的軟化點可為50℃～140℃、55℃～120℃、或60℃～100℃。(A2) The softening point of the component may be 50 ° C to 140 ° C, 55 ° C to 120 ° C, or 60 ° C to 100 ° C.

相對於（a）成分、（b）成分及（c）成分的總質量100質量份而言，（a2）成分的含量可為5質量份～50質量份、10質量份～40質量份、或20質量份～30質量份。若（a2）成分的含量為5質量份以上，則有可獲得更良好的硬化性的傾向。若（a2）成分的含量為50質量份以下，則有膜狀接著劑的埋入性更良好的傾向。The content of the component (a2) may be 5 to 50 parts by mass, 10 to 40 parts by mass, or 100 parts by mass of the total mass of the components (a), (b), and (c). 20 to 30 parts by mass. When the content of the (a2) component is 5 parts by mass or more, there is a tendency that more favorable curability can be obtained. When the content of the component (a2) is 50 parts by mass or less, the embedding property of the film-shaped adhesive tends to be better.

就硬化性的觀點而言，（a1）成分的環氧當量與（a2）成分的羥基當量的比（（a1）成分的環氧當量/（a2）成分的羥基當量）可為0.30/0.70～0.70/0.30、0.35/0.65～0.65/0.35、0.40/0.60～0.60/0.40、或0.45/0.55～0.55/0.45。若該當量比為0.30/0.70以上，則有可獲得更充分的硬化性的傾向。若該當量比為0.70/0.30以下，則可防止黏度變得過高，可獲得更充分的流動性。From the viewpoint of hardenability, the ratio of the epoxy equivalent of the (a1) component to the hydroxyl equivalent of the (a2) component (the epoxy equivalent of the (a1) component / the hydroxyl equivalent of the (a2) component) may be 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45. If this equivalent ratio is 0.30 / 0.70 or more, there exists a tendency for sufficient hardenability to be obtained. When the equivalent ratio is 0.70 / 0.30 or less, it is possible to prevent the viscosity from becoming too high and obtain more sufficient fluidity.

＜（b）高分子量成分＞
（b）成分較佳為玻璃轉移溫度（Tg）為50℃以下者。＜ (b) High molecular weight component ＞
The component (b) is preferably one having a glass transition temperature (Tg) of 50 ° C or lower.

作為（b）成分，例如可列舉：丙烯酸樹脂、聚酯樹脂、聚醯胺樹脂、聚醯亞胺樹脂、矽酮樹脂、丁二烯樹脂、丙烯腈樹脂及該些的改質體等。Examples of the component (b) include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, butadiene resin, acrylonitrile resin, and these modified bodies.

就流動性的觀點而言，（b）成分可包含丙烯酸樹脂。此處，所謂丙烯酸樹脂，是指包含源自(甲基)丙烯酸酯的結構單元的聚合物。丙烯酸樹脂較佳為包含源自具有環氧基、醇性或酚性羥基、羧基等交聯性官能基的(甲基)丙烯酸酯的結構單元作為結構單元的聚合物。另外，丙烯酸樹脂亦可為(甲基)丙烯酸酯與丙烯腈的共聚物等丙烯酸橡膠。From the viewpoint of fluidity, the component (b) may include an acrylic resin. Here, the acrylic resin refers to a polymer including a structural unit derived from a (meth) acrylate. The acrylic resin is preferably a polymer containing, as a structural unit, a structural unit derived from a (meth) acrylate having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, and a carboxyl group. The acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylate and acrylonitrile.

丙烯酸樹脂的玻璃轉移溫度（Tg）可為-50℃～50℃或-30℃～30℃。若丙烯酸樹脂的Tg為-50℃以上，則有可防止接著劑組成物的柔軟性變得過高的傾向。藉此，於晶圓切割時容易將膜狀接著劑切斷，能夠防止毛刺的產生。若丙烯酸樹脂的Tg為50℃以下，則有可抑制接著劑組成物的柔軟性下降的傾向。藉此，當將膜狀接著劑貼附於晶圓時，有容易將空隙充分埋入的傾向。另外，能夠防止由晶圓的密接性的下降所導致的切割時的碎化（chipping）。此處，玻璃轉移溫度（Tg）是使用示差掃描熱量計（Differential Scanning Calorimeter，DSC）（例如理學股份有限公司製造的「Thermo Plus 2」）所測定出的值。The glass transition temperature (Tg) of the acrylic resin may be -50 ° C to 50 ° C or -30 ° C to 30 ° C. When the Tg of the acrylic resin is −50 ° C. or higher, the flexibility of the adhesive composition tends to be prevented from becoming too high. This makes it easy to cut the film-like adhesive during wafer dicing, and prevents the occurrence of burrs. When the Tg of the acrylic resin is 50 ° C. or lower, the softness of the adhesive composition tends to be suppressed from decreasing. Thereby, when a film-shaped adhesive is attached to a wafer, it tends to be easy to fully embed a space | gap. In addition, chipping at the time of dicing caused by a decrease in the adhesiveness of the wafer can be prevented. Here, the glass transition temperature (Tg) is a value measured using a differential scanning calorimeter (DSC) (for example, "Thermo Plus 2" manufactured by Rigaku Corporation).

丙烯酸樹脂的重量平均分子量（Mw）可為10萬～300萬或50萬～200萬。若丙烯酸樹脂的Mw為此種範圍，則可適當地控制膜形成性、膜狀時的強度、可撓性、黏性等，並且回流性優異，可提升埋入性。此處，Mw是指藉由凝膠滲透層析法（Gel Permeation Chromatography，GPC）進行測定，並使用基於標準聚苯乙烯的校準曲線進行換算而得的值。The weight average molecular weight (Mw) of the acrylic resin may be 100,000 to 3 million or 500,000 to 2 million. When the Mw of the acrylic resin is within such a range, the film forming properties, strength, flexibility, and tackiness at the time of the film shape can be appropriately controlled, and the reflow properties can be excellent, and the embedding properties can be improved. Here, Mw is a value measured by gel permeation chromatography (GPC) and converted using a calibration curve based on standard polystyrene.

作為丙烯酸樹脂的市售品，例如可列舉：SG-70L、SG-708-6、WS-023 EK30、SG-280 EK23、HTR-860P-3CSP、HTR-860P-3CSP-3DB（均為長瀨化成（Nagase ChemteX）股份有限公司製造）。Examples of commercially available acrylic resins include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3CSP, HTR-860P-3CSP-3DB (all of Nagase (Manufactured by Nagase ChemteX).

相對於（a）成分、（b）成分及（c）成分的總質量100質量份而言，（b）成分的含量可為5質量份～70質量份、10質量份～50質量份、或15質量份～30質量份。若（b）成分的含量為5質量份以上，則可使成形時的流動性的控制及高溫下的操作性更進一步良好。若（b）成分的含量為70質量份以下，則可使埋入性更進一步良好。The content of the component (b) may be 5 to 70 parts by mass, 10 to 50 parts by mass, or 100 parts by mass of the total mass of the components (a), (b), and (c). 15 parts by mass to 30 parts by mass. When content of (b) component is 5 mass parts or more, control of the fluidity | liquidity at the time of shaping | molding, and workability | operativity at high temperature can be further improved. When the content of the component (b) is 70 parts by mass or less, the embedding property can be further improved.

＜（c）無機填料＞
作為（c）成分，例如例如可列舉：氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶鬚、氮化硼、二氧化矽等。該些可單獨使用一種或者將兩種以上組合使用。該些中，就與樹脂的相溶性的觀點而言，（c）成分可為二氧化矽。＜ (c) Inorganic filler ＞
Examples of the component (c) include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whiskers. , Boron nitride, silicon dioxide, etc. These may be used alone or in combination of two or more. Among these, from the viewpoint of compatibility with the resin, the component (c) may be silicon dioxide.

就提升接著性的觀點而言，（c）成分的平均粒徑可為0.005 μm～1 μm或0.05 μm～0.5 μm。此處，平均粒徑是指藉由根據布厄特（Brunauer-Emmett-Teller，BET）比表面積進行換算而求出的值。From the viewpoint of improving adhesion, the average particle diameter of the component (c) may be 0.005 μm to 1 μm or 0.05 μm to 0.5 μm. Here, the average particle diameter refers to a value obtained by conversion from a specific surface area of Brunauer-Emmett-Teller (BET).

相對於（a）成分、（b）成分及（c）成分的總質量100質量份而言，（c）成分的含量可為5質量份～50質量份、15質量份～45質量份、或25質量份～40質量份。若（c）成分的含量為5質量份以上，則有膜狀接著劑的流動性進一步提升的傾向。若（c）成分的含量為50質量份以下，則有膜狀接著劑的切割（dicing）性更良好的傾向。The content of the component (c) may be 5 to 50 parts by mass, 15 to 45 parts by mass, or 100 parts by mass of the total mass of the components (a), (b), and (c). 25 to 40 parts by mass. When the content of the component (c) is 5 parts by mass or more, the fluidity of the film-shaped adhesive tends to be further improved. When the content of the component (c) is 50 parts by mass or less, the dicing property of the film-like adhesive tends to be better.

＜（d）偶合劑＞
（d）成分可為矽烷偶合劑。作為矽烷偶合劑，例如可列舉：γ-脲基丙基三乙氧基矽烷、γ-巰基丙基三甲氧基矽烷、3-苯基胺基丙基三甲氧基矽烷、3-(2-胺基乙基)胺基丙基三甲氧基矽烷等。該些可單獨使用一種或者將兩種以上組合使用。＜ （d） Coupling agent ＞
(D) The component may be a silane coupling agent. Examples of the silane coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3- (2-amine Ethyl) aminopropyltrimethoxysilane and the like. These may be used alone or in combination of two or more.

相對於（a）成分、（b）成分及（c）成分的總質量100質量份而言，（d）成分的含量可為0.01質量份～5質量份。The content of the component (d) may be 0.01 to 5 parts by mass based on 100 parts by mass of the total mass of the components (a), (b), and (c).

＜（e）硬化促進劑＞
（e）成分並無特別限定，可使用通常所使用者。作為（e）成分，例如可列舉：咪唑類及其衍生物、有機磷系化合物、二級胺類、三級胺類、四級銨鹽等。該些可單獨使用一種或者將兩種以上組合使用。該些中，就反應性的觀點而言，（e）成分可為咪唑類及其衍生物。＜ (e) Hardening accelerator ＞
(E) The component is not particularly limited and can be used by ordinary users. Examples of the component (e) include imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. These may be used alone or in combination of two or more. Among these, from the viewpoint of reactivity, the component (e) may be imidazoles and derivatives thereof.

作為咪唑類，例如可列舉：2-甲基咪唑、1-苄基-2-甲基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-甲基咪唑等。該些可單獨使用一種或者將兩種以上組合使用。Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole Wait. These may be used alone or in combination of two or more.

相對於（a）成分、（b）成分及（c）成分的總質量100質量份而言，（e）成分的含量可為0.01質量份～1質量份。The content of the component (e) may be 0.01 to 1 part by mass based on 100 parts by mass of the total mass of the components (a), (b), and (c).

＜溶劑＞
第一接著膜2及第二接著膜4亦可殘存有形成後述的第一接著膜2及第二接著膜4時所使用的溶劑。溶劑只要為可將各成分均勻地溶解、混煉或分散者則可無限制地使用現有公知者。作為此種溶劑，例如可列舉：丙酮、甲基乙基酮、甲基異丁基酮、環己酮等酮系溶媒；二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮、甲苯、二甲苯等。就乾燥速度快、價格低的方面而言，較佳為使用甲基乙基酮、環己酮等。<Solvent>
The first adhesive film 2 and the second adhesive film 4 may have a solvent used for forming the first adhesive film 2 and the second adhesive film 4 described later. As long as the solvent can dissolve, knead, or disperse each component uniformly, a conventionally known one can be used without limitation. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; dimethylformamide, dimethylacetamide, and N-methyl Pyrrolidone, toluene, xylene and the like. In terms of fast drying speed and low price, it is preferable to use methyl ethyl ketone, cyclohexanone, or the like.

以膜狀接著劑總量為基準，膜狀接著劑10（第一接著膜2及第二接著膜4）的溶劑含有率為1.5質量%以下。溶劑含有率可為1.2質量%以下、0.9質量%以下、或0.6量%以下。若溶劑含有率為1.5質量%以下，則有可抑制滲出的傾向。溶劑含有率的下限值並無特別限制，例如可為0.01質量%以上。Based on the total amount of the film-shaped adhesive, the solvent content of the film-shaped adhesive 10 (the first adhesive film 2 and the second adhesive film 4) is 1.5% by mass or less. The solvent content may be 1.2% by mass or less, 0.9% by mass or less, or 0.6% by mass or less. When the solvent content is 1.5% by mass or less, there is a tendency that bleeding can be suppressed. The lower limit of the solvent content is not particularly limited, and may be, for example, 0.01% by mass or more.

接著膜藉由使其厚度薄，而有容易將溶劑加熱乾燥，可降低溶劑含有率的傾向。因此，與由單層所構成的相同厚度者相比，如膜狀接著劑10般包括第一接著膜2及第二接著膜4者不會提高加熱乾燥條件，容易降低溶劑含有率。另外，膜狀接著劑10的溶劑含有率例如可藉由改變接著劑組成物的清漆的加熱乾燥的條件來進行調整。The thickness of the subsequent film tends to reduce the solvent content by easily heating and drying the solvent. Therefore, as compared with those having the same thickness composed of a single layer, including the first adhesive film 2 and the second adhesive film 4 like the film-like adhesive 10 does not increase the heating and drying conditions, and it is easy to reduce the solvent content rate. The solvent content of the film-shaped adhesive 10 can be adjusted by, for example, changing the conditions of heat drying of the varnish of the adhesive composition.

第一接著膜2及第二接著膜4亦可更含有其他成分。作為其他成分，例如可列舉離子捕獲劑、流變控制劑等。相對於（a）成分、（b）成分及（c）成分的總質量100質量份而言，其他成分的含量可為0.01質量份～20質量份。The first adhesive film 2 and the second adhesive film 4 may further contain other components. Examples of the other components include an ion trapping agent and a rheology control agent. The content of the other components may be 0.01 to 20 parts by mass with respect to 100 parts by mass of the total mass of the components (a), (b), and (c).

膜狀接著劑10（第1接著膜2及第2接著膜4）的80℃下的剪切黏度為5000 Pa·s以下。80℃下的剪切黏度可為3500 Pa·s以下、2500 Pa·s以下、或1500 Pa·s以下。若80℃下的剪切黏度為5000 Pa·s以下，則有流動性提高、埋入性提升的傾向。80℃下的剪切黏度的下限值並無特別限制，例如可為10 Pa·s以上。再者，80℃下的剪切黏度例如可藉由實施例中記載的方法來進行測定。The film-like adhesive 10 (the first adhesive film 2 and the second adhesive film 4) had a shear viscosity at 80 ° C of 5000 Pa · s or less. The shear viscosity at 80 ° C may be 3500 Pa · s or less, 2500 Pa · s or less, or 1500 Pa · s or less. When the shear viscosity at 80 ° C is 5000 Pa · s or less, the fluidity and the embedding property tend to be improved. The lower limit of the shear viscosity at 80 ° C is not particularly limited, and may be, for example, 10 Pa · s or more. The shear viscosity at 80 ° C. can be measured, for example, by the method described in Examples.

膜狀接著劑10的80℃下的剪切黏度例如有依存於所述（b）成分及（c）成分的含量的傾向，可藉由改變該些來進行調整。The shear viscosity at 80 ° C. of the film-like adhesive 10 tends to depend on the content of the components (b) and (c), for example, and can be adjusted by changing these.

膜狀接著劑10（第1接著膜2及第2接著膜4）的80℃下的儲存彈性係數可為10 MPa以下。80℃下的儲存彈性係數可為5 MPa以下、1 MPa以下、或0.5 MPa以下。若80℃下的儲存彈性係數為10 MPa以下，則有埋入性更優異的傾向。80℃下的儲存彈性係數的下限值並無特別限制，例如可為0.02 MPa以上。The storage elastic coefficient of the film-shaped adhesive agent 10 (the 1st adhesive film 2 and the 2nd adhesive film 4) at 80 degreeC may be 10 MPa or less. The storage elastic coefficient at 80 ° C may be 5 MPa or less, 1 MPa or less, or 0.5 MPa or less. When the storage elastic coefficient at 80 ° C is 10 MPa or less, the embedding property tends to be more excellent. The lower limit of the storage elastic coefficient at 80 ° C is not particularly limited, and may be, for example, 0.02 MPa or more.

膜狀接著劑10的80℃下的儲存彈性係數例如可藉由改變（a）成分的官能基當量來進行調整。The storage elastic coefficient of the film-shaped adhesive agent 10 at 80 degreeC can be adjusted by changing the functional group equivalent of (a) component, for example.

第1接著膜2的厚度及第2接著膜4的厚度彼此可相同亦可不同，較佳為彼此相同。第一接著膜2的厚度及第二接著膜4的厚度分別可為2 μm～140 μm。第一接著膜2的厚度及第二接著膜4的厚度分別可為5 μm～110 μm、10 μm～90 μm、或20 μm～60 μm。若該些的厚度分別為2 μm以上，則有埋入性變得更良好的傾向。若該些的厚度分別為140 μm以下，則有可進一步降低溶劑含有率的傾向。The thickness of the first adhesive film 2 and the thickness of the second adhesive film 4 may be the same as or different from each other, and are preferably the same as each other. The thickness of the first adhesive film 2 and the thickness of the second adhesive film 4 may be 2 μm to 140 μm, respectively. The thickness of the first adhesive film 2 and the thickness of the second adhesive film 4 may be 5 μm to 110 μm, 10 μm to 90 μm, or 20 μm to 60 μm, respectively. If these thicknesses are 2 μm or more, the embedding property tends to be more favorable. When these thicknesses are each 140 μm or less, there is a tendency that the solvent content rate can be further reduced.

為了能夠充分地填充第一導線及第一半導體元件、以及基板的配線電路等的凹凸，膜狀接著劑10的厚度（第一接著膜2與第二接著膜4的合計厚度）可為3 μm～150 μm。膜狀接著劑10的厚度亦可為20 μm～140 μm或40 μm～130 μm。若膜狀接著劑10的厚度為3 μm以上，則有埋入性更優異的傾向。若膜狀接著劑10的厚度為150 μm以下，則有可進一步抑制滲出的傾向。The thickness of the film-like adhesive 10 (total thickness of the first and second adhesive films 2 and 4) may be 3 μm in order to sufficiently fill the unevenness of the first lead, the first semiconductor element, and the wiring circuit of the substrate. ~ 150 μm. The thickness of the film-shaped adhesive 10 may be 20 μm to 140 μm or 40 μm to 130 μm. When the thickness of the film-shaped adhesive 10 is 3 μm or more, the embedding property tends to be more excellent. When the thickness of the film-shaped adhesive 10 is 150 μm or less, there is a tendency that the bleeding can be further suppressed.

膜狀接著劑10亦可於第一接著膜2及第二接著膜4上進而積層接著膜。即，膜狀接著劑10亦可包括三層以上的接著膜。第一接著膜2及第二接著膜4以外的接著膜可為與第一接著膜2及第二接著膜4相同者。The film-like adhesive 10 may be further laminated on the first and second adhesive films 2 and 4. That is, the film-like adhesive 10 may include three or more layers of adhesive films. The adhesive films other than the first adhesive film 2 and the second adhesive film 4 may be the same as the first adhesive film 2 and the second adhesive film 4.

[膜狀接著劑的製造方法]
膜狀接著劑的製造方法包括：將含有溶劑的第一接著劑組成物的清漆塗佈於基材上，並將所塗佈的第一接著劑組成物的清漆於50℃～150℃下加熱乾燥，製作以第一接著膜總量為基準而溶劑含有率為1.5質量%以下的第一接著膜的步驟；將含有溶劑的第二接著劑組成物的清漆塗佈於基材上，並將所塗佈的第二接著劑組成物的清漆於50℃～150℃下加熱乾燥，製作以第二接著膜總量為基準而溶劑含有率為1.5質量%以下的第二接著膜的步驟；以及將第一接著膜與第二接著膜貼合的步驟。[Manufacturing method of film adhesive]
A method for producing a film-shaped adhesive includes applying a varnish of a first adhesive composition containing a solvent to a substrate, and heating the applied varnish of the first adhesive composition at 50 ° C to 150 ° C. A step of preparing a first adhesive film with a solvent content of 1.5% by mass or less based on the total amount of the first adhesive film; applying a varnish containing a second adhesive composition containing a solvent to a substrate; and The step of applying and drying the varnish of the applied second adhesive composition at 50 ° C. to 150 ° C. to produce a second adhesive film having a solvent content of 1.5% by mass or less based on the total amount of the second adhesive film; and A step of bonding the first adhesive film to the second adhesive film.

第一接著劑組成物的清漆及第二接著劑組成物的清漆例如可藉由將（a）成分～（e）成分、視需要的（d）成分及（e）成分於溶劑中混合、混煉而進行製備。The varnish of the first adhesive composition and the varnish of the second adhesive composition can be mixed, for example, by mixing (a) component to (e) component, (d) component and (e) component in a solvent as needed. To prepare.

混合、混煉可使用通常的攪拌機、擂潰機、三輥磨機（three-rod roll mill）、球磨機（ball mill）等分散機，將該些適當組合而進行。Mixing and kneading can be carried out by using an appropriate combination of these dispersers such as a general mixer, a masher, a three-rod roll mill, and a ball mill.

用於製作第一接著劑組成物的清漆及第二接著劑組成物的清漆的溶劑只要為可將所述各成分均勻地溶解、混煉或分散者則可無限制地使用現有公知者。作為此種溶劑，例如可列舉：丙酮、甲基乙基酮、甲基異丁基酮、環己酮等酮系溶媒；二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮、甲苯、二甲苯等。就乾燥速度快、價格低的方面而言，較佳為使用甲基乙基酮、環己酮等。As a solvent for producing the varnish of the first adhesive composition and the varnish of the second adhesive composition, conventionally known ones can be used without limitation as long as the components can be uniformly dissolved, kneaded, or dispersed. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; dimethylformamide, dimethylacetamide, and N-methyl Pyrrolidone, toluene, xylene and the like. In terms of fast drying speed and low price, it is preferable to use methyl ethyl ketone, cyclohexanone, or the like.

基材膜並無特別限制，例如可列舉：聚酯膜、聚丙烯膜（OPP膜等）、聚對苯二甲酸乙二酯膜、聚醯亞胺膜、聚醚醯亞胺膜、聚醚萘二甲酸酯膜、甲基戊烯膜等。The substrate film is not particularly limited, and examples thereof include a polyester film, a polypropylene film (OPP film, etc.), a polyethylene terephthalate film, a polyimide film, a polyetherimide film, and a polyether. Naphthalate film, methylpentene film, etc.

作為將第一接著劑組成物的清漆及第二接著劑組成物的清漆塗佈於基材膜的方法，可使用公知的方法，例如可列舉：刮塗法、輥塗法、噴塗法、凹版塗佈法、棒塗法、簾塗法等。加熱乾燥的條件只要為所使用的溶劑充分揮發的條件則無特別限制，例如可於50℃～150℃下加熱1分鐘～30分鐘來進行。加熱乾燥可以50℃～150℃的範圍內的溫度階段性地升溫來進行。藉由將加熱溫度設為50℃以上，而有容易將第一接著膜2及第二接著膜4（膜狀接著劑10）的溶劑含有率設為以膜狀接著劑總量為基準而為1.5質量%以下的傾向。另一方面，藉由將加熱溫度設為150℃以下，而有可抑制接著劑組成物的硬化進行的傾向。As a method of applying the varnish of the first adhesive composition and the varnish of the second adhesive composition to the substrate film, a known method can be used, and examples thereof include a blade coating method, a roll coating method, a spray coating method, and a gravure. Coating method, bar coating method, curtain coating method, and the like. The conditions for heating and drying are not particularly limited as long as the solvent used is sufficiently volatilized, and for example, heating can be performed at 50 ° C to 150 ° C for 1 minute to 30 minutes. The heating and drying can be performed stepwise by increasing the temperature in the range of 50 ° C to 150 ° C. By setting the heating temperature to 50 ° C or higher, it is easy to set the solvent content of the first adhesive film 2 and the second adhesive film 4 (film-shaped adhesive 10) to be based on the total amount of the film-shaped adhesive. The tendency is 1.5 mass% or less. On the other hand, by setting the heating temperature to 150 ° C. or lower, the curing of the adhesive composition tends to be suppressed.

膜狀接著劑10可藉由使用輥層壓機、真空層壓機等將第一接著膜2與第二接著膜4於規定條件（例如室溫（20℃）或加熱狀態）下貼合而進行製作。The film-like adhesive 10 can be bonded by using a roll laminator, a vacuum laminator, or the like to adhere the first adhesive film 2 and the second adhesive film 4 under predetermined conditions (for example, room temperature (20 ° C) or a heated state). Make it.

膜狀接著劑10亦可藉由以下方式進行製作：首先，將第一接著劑組成物的清漆塗佈於基材膜，並進行加熱乾燥而將溶劑去除，製作第一接著膜2，繼而，於第一接著膜2上塗佈第二接著劑組成物的清漆，並進行加熱乾燥而將溶劑去除，形成第二接著膜。The film-shaped adhesive agent 10 can also be produced by firstly applying a varnish of the first adhesive agent composition to a substrate film and heating and drying to remove the solvent to produce a first adhesive film 2, A varnish of a second adhesive composition is applied to the first adhesive film 2, and the solvent is removed by heating and drying to form a second adhesive film.

[接著片]
圖2為表示一實施形態的接著片的示意剖面圖。接著片100包括基材膜20及設置於基材膜20上的包含第一接著膜2及第二接著膜4的膜狀接著劑10。[Next film]
Fig. 2 is a schematic cross-sectional view showing a bonding sheet according to an embodiment. The adhesive sheet 100 includes a base film 20 and a film-shaped adhesive 10 including a first adhesive film 2 and a second adhesive film 4 provided on the base film 20.

基材膜20亦可為切割帶。此種接著片可用作切割黏晶一體型接著片。該情況下，由於層壓於半導體晶圓的層壓步驟為一次，因此可有效率地作業。The base film 20 may be a dicing tape. Such a bonding sheet can be used as a cutting-bond-integrated bonding sheet. In this case, since the laminating step for laminating the semiconductor wafer is performed once, it is possible to operate efficiently.

作為切割帶，例如可列舉：聚四氟乙烯膜、聚對苯二甲酸乙二酯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、聚醯亞胺膜等塑膠膜等。另外，切割帶視需要可進行底塗塗佈、UV處理、電暈放電處理、研磨處理、蝕刻處理等表面處理。切割帶較佳為具有黏著性者。此種切割帶可為對所述塑膠膜賦予黏著性者，亦可為於所述塑膠膜的單面設置有黏著劑層者。Examples of the dicing tape include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. In addition, the dicing tape may be subjected to surface treatments such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment as necessary. The dicing tape is preferably one having adhesiveness. Such a cutting tape may be one that imparts adhesiveness to the plastic film, or one that is provided with an adhesive layer on one side of the plastic film.

接著片100可藉由以下方式進行製作。首先，製備第一接著劑組成物的清漆，將其塗佈於基材膜，並進行加熱乾燥而將溶劑去除，藉此而製作第一接著膜2。繼而，另行由第二接著劑組成物的清漆製作第二接著膜4，並將其層壓於第一接著膜2。Next, the sheet 100 can be produced in the following manner. First, a varnish of a first adhesive composition is prepared, applied to a base film, and dried by heating to remove a solvent, thereby producing a first adhesive film 2. Then, a second adhesive film 4 is separately produced from the varnish of the second adhesive composition, and is laminated on the first adhesive film 2.

圖3為表示另一實施形態的接著片的示意剖面圖。接著片110更包括積層於膜狀接著劑10的與基材膜20為相反側的面（第二接著膜4側的面）上的保護膜30。保護膜30可為與所述基材膜20相同者。保護膜的厚度例如可為60 μm～200 μm或70 μm～170 μm。Fig. 3 is a schematic cross-sectional view showing a bonding sheet according to another embodiment. The adhesive sheet 110 further includes a protective film 30 laminated on a surface of the film-shaped adhesive 10 opposite to the base film 20 (the surface on the second adhesive film 4 side). The protective film 30 may be the same as the base film 20. The thickness of the protective film may be, for example, 60 μm to 200 μm or 70 μm to 170 μm.

[半導體裝置]
圖4為表示一實施形態的半導體裝置的示意剖面圖。半導體裝置200是將第一階段的第一半導體元件Wa經由第一導線88而以打線接合的方式連接於基板14，並且於第一半導體元件Wa上，經由膜狀接著劑10而壓接第二半導體元件Waa，從而將第一導線88的至少一部分埋入膜狀接著劑10中而成的半導體裝置。半導體裝置可為將第一導線88的至少一部分埋入而成的線埋入型的半導體裝置，亦可為將第一導線88及第一半導體元件Wa埋入而成的半導體裝置。另外，半導體裝置200中，進而經由第二導線98而將基板14與第二半導體元件Waa電性連接，並且藉由密封材42而將第二半導體元件Waa密封。[Semiconductor device]
FIG. 4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment. In the semiconductor device 200, the first semiconductor element Wa in the first stage is connected to the substrate 14 by wire bonding via the first wire 88, and the second semiconductor element Wa is crimped to the second semiconductor element Wa via the film-shaped adhesive 10 The semiconductor device Waa is a semiconductor device in which at least a part of the first wire 88 is buried in the film-shaped adhesive 10. The semiconductor device may be a line-embedded semiconductor device in which at least a portion of the first lead 88 is embedded, or a semiconductor device in which the first lead 88 and the first semiconductor element Wa are embedded. In addition, in the semiconductor device 200, the substrate 14 and the second semiconductor element Waa are further electrically connected via a second wire 98, and the second semiconductor element Waa is sealed by a sealing material 42.

第一半導體元件Wa的厚度可為10 μm～170 μm，第二半導體元件Waa的厚度可為20 μm～400 μm。埋入至膜狀接著劑10內部的第一半導體元件Wa為用以驅動半導體裝置200的控制器晶片。The thickness of the first semiconductor element Wa may be 10 μm to 170 μm, and the thickness of the second semiconductor element Waa may be 20 μm to 400 μm. The first semiconductor element Wa embedded in the film-shaped adhesive 10 is a controller wafer for driving the semiconductor device 200.

基板14包括電路圖案84、94分別於表面各形成有兩處的有機基板90。第一半導體元件Wa經由接著劑41而壓接於電路圖案94上。第二半導體元件Waa以覆蓋未壓接有第一半導體元件Wa的電路圖案94、第一半導體元件Wa、及電路圖案84的一部分的方式經由膜狀接著劑10而壓接於基板14。於由基板14上的電路圖案84、94所引起的凹凸的階差中埋入有膜狀接著劑10。並且，利用樹脂製的密封材42而將第二半導體元件Waa、電路圖案84及第二導線98密封。The substrate 14 includes two organic patterns 90 formed on the surface of the circuit patterns 84 and 94, respectively. The first semiconductor element Wa is crimped onto the circuit pattern 94 via an adhesive 41. The second semiconductor element Waa is crimped to the substrate 14 via a film-like adhesive 10 so as to cover a part of the circuit pattern 94, the first semiconductor element Wa, and the circuit pattern 84 of the first semiconductor element Wa, which is not crimped. A film-like adhesive 10 is embedded in a step of unevenness caused by the circuit patterns 84 and 94 on the substrate 14. The second semiconductor element Waa, the circuit pattern 84, and the second lead 98 are sealed with a resin sealing material 42.

[半導體裝置的製造方法]
本實施形態的半導體裝置的製造方法包括：於基板上經由第一導線而電性連接第一半導體元件的第一打線接合步驟；於第二半導體元件的單面貼附以上所述的膜狀接著劑的層壓步驟；以及經由膜狀接著劑來壓接貼附有膜狀接著劑的第二半導體元件，藉此而將第一導線的至少一部分埋入膜狀接著劑中的黏晶步驟。[Manufacturing method of semiconductor device]
The method for manufacturing a semiconductor device according to this embodiment includes a first wire bonding step of electrically connecting a first semiconductor element to a substrate via a first wire; and attaching the above-mentioned film-like adhesive to one side of a second semiconductor element A laminating step of the adhesive; and a die-bonding step in which at least a portion of the first lead is buried in the film-shaped adhesive by pressure-bonding the second semiconductor element to which the film-shaped adhesive is attached via the film-shaped adhesive.

圖5～圖9為表示一實施形態的半導體裝置的製造方法的一系列步驟的示意剖面圖。本實施形態的半導體裝置200為將第一導線88及第一半導體元件Wa埋入而成的半導體裝置，可藉由以下程序而製造。首先，如圖5所示，於基板14上的電路圖案94上壓接具有接著劑41的第一半導體元件Wa，且經由第一導線88而將基板14上的電路圖案84與第一半導體元件Wa電性接合連接（第一打線接合步驟）。5 to 9 are schematic cross-sectional views showing a series of steps in a method of manufacturing a semiconductor device according to an embodiment. The semiconductor device 200 of this embodiment is a semiconductor device in which a first lead wire 88 and a first semiconductor element Wa are embedded, and can be manufactured by the following procedure. First, as shown in FIG. 5, a first semiconductor element Wa having an adhesive 41 is crimped onto a circuit pattern 94 on the substrate 14, and the circuit pattern 84 on the substrate 14 and the first semiconductor element are bonded via a first wire 88. Wa electrical bonding connection (first wire bonding step).

其次，於半導體晶圓（例如厚度：50 μm、尺寸：8吋）的單面上層壓接著片100，並剝去基材膜20，藉此而於半導體晶圓的單面貼附膜狀接著劑10（例如厚度：135 μm）。並且，於將切割帶貼合於膜狀接著劑10後，切割為規定的大小（例如7.5 mm見方），藉此而如圖6所示，獲得貼附有膜狀接著劑10的第二半導體元件Waa（層壓步驟）。Next, the adhesive sheet 100 is laminated on one side of a semiconductor wafer (for example, thickness: 50 μm, size: 8 inches), and the substrate film 20 is peeled off, thereby attaching a film-like adhesive on one side of the semiconductor wafer. Agent 10 (for example, thickness: 135 μm). Then, after the dicing tape is bonded to the film-shaped adhesive 10, it is cut to a predetermined size (for example, 7.5 mm square), thereby obtaining a second semiconductor to which the film-shaped adhesive 10 is attached as shown in FIG. 6. Element Waa (lamination step).

層壓步驟的溫度條件可為50℃～100℃或60℃～80℃。若層壓步驟的溫度為50℃以上，則可獲得與半導體晶圓的良好的密接性。若層壓步驟的溫度為100℃以下，則可抑制膜狀接著劑10於層壓步驟中過度流動，因而可防止引起厚度的變化等。The temperature conditions of the lamination step may be 50 ° C to 100 ° C or 60 ° C to 80 ° C. When the temperature of the lamination step is 50 ° C. or higher, good adhesion to the semiconductor wafer can be obtained. When the temperature in the laminating step is 100 ° C. or lower, excessive flow of the film-like adhesive 10 in the laminating step can be suppressed, and a change in thickness or the like can be prevented.

作為切割方法，例如可列舉：使用旋轉刀刃的刀片切割、藉由雷射而將膜狀接著劑或晶圓與膜狀接著劑的兩者切斷的方法等。Examples of the dicing method include a dicing using a rotary blade, a method of cutting both a film-shaped adhesive or a wafer and a film-shaped adhesive by laser, and the like.

並且，將貼附有膜狀接著劑10的第二半導體元件Waa壓接於經由第一導線88而接合連接有第一半導體元件Wa的基板14。具體而言，如圖7所示，以藉由膜狀接著劑10來覆蓋第一導線88及第一半導體元件Wa的方式載置貼附有膜狀接著劑10的第二半導體元件Waa，繼而，如圖8所示，藉由使第二半導體元件Waa壓接於基板14而將第二半導體元件Waa固定於基板14（黏晶步驟）。黏晶步驟較佳為將膜狀接著劑10於80℃～180℃、0.01 MPa～0.50 MPa的條件下壓接0.5秒～3.0秒。於黏晶步驟之後，將膜狀接著劑10於60℃～175℃、0.3 MPa～0.7 MPa的條件下加壓及加熱5分鐘以上。Then, the second semiconductor element Waa to which the film-shaped adhesive 10 is attached is pressure-bonded to the substrate 14 to which the first semiconductor element Wa is bonded and connected via the first wire 88. Specifically, as shown in FIG. 7, the second semiconductor element Waa to which the film-shaped adhesive 10 is attached is placed so that the first lead 88 and the first semiconductor element Wa are covered with the film-shaped adhesive 10, and then As shown in FIG. 8, the second semiconductor element Waa is fixed to the substrate 14 by crimping the second semiconductor element Waa to the substrate 14 (the die bonding step). The die-bonding step is preferably performed by pressure-bonding the film-shaped adhesive 10 at 80 ° C. to 180 ° C. and 0.01 MPa to 0.50 MPa for 0.5 seconds to 3.0 seconds. After the sticking step, the film-like adhesive 10 is pressurized and heated under conditions of 60 ° C. to 175 ° C. and 0.3 MPa to 0.7 MPa for more than 5 minutes.

繼而，如圖9所示，於將基板14與第二半導體元件Waa經由第二導線98而電性連接後（第二打線接合步驟），利用密封材42將電路圖案84、第二導線98及第二半導體元件Waa密封。藉由經過此種步驟而可製造半導體裝置200。Then, as shown in FIG. 9, after the substrate 14 and the second semiconductor element Waa are electrically connected via the second wire 98 (second wire bonding step), the circuit pattern 84, the second wire 98, and The second semiconductor element Waa is sealed. The semiconductor device 200 can be manufactured by going through such steps.

作為其他實施形態，半導體裝置亦可為將第一導線88的至少一部分埋入而成的線埋入型的半導體裝置。
[實施例]As another embodiment, the semiconductor device may be a line-embedded semiconductor device in which at least a portion of the first lead wire 88 is embedded.
[Example]

以下，列舉實施例來對本發明進行更具體的說明。但本發明並不限定於該些實施例。Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to these examples.

＜接著劑組成物的清漆的製備＞
（合成例1～合成例3）
以表1所示的品名及組成比（單位：質量份），於包含作為（a）熱硬化性樹脂的環氧樹脂及酚樹脂、以及（c）無機填料的組成物中添加環己酮，進行攪拌混合。於其中添加表1所示的作為（b）高分子量成分的丙烯酸橡膠並進行攪拌，進而添加表1所示的（d）偶合劑及（e）硬化促進劑來進行攪拌，直至各成分變得均勻，從而製備合成例1～合成例3的接著劑組成物的清漆。<Preparation of Varnish of Adhesive Composition>
(Synthesis example 1 to synthesis example 3)
Cyclohexanone is added to a composition containing (a) an epoxy resin and a phenol resin as a thermosetting resin, and (c) an inorganic filler with a product name and a composition ratio (unit: part by mass) shown in Table 1, Stir and mix. The acrylic rubber (b) high-molecular-weight component shown in Table 1 is added and stirred, and the (d) coupling agent and (e) hardening accelerator shown in Table 1 are added and stirred until each component becomes Uniform, and the varnish of the adhesive composition of the synthesis examples 1-3 was prepared.

再者，表1中的各成分的記號是指下述者。In addition, the symbol of each component in Table 1 means the following.

（環氧樹脂）
YDCN-700-10（商品名，新日鐵住金化學股份有限公司製造，鄰甲酚酚醛清漆型環氧樹脂，環氧當量：209 g/eq）
EXA-830CRP（商品名，迪愛生（DIC）股份有限公司製造，雙酚F型環氧樹脂，環氧當量：159 g/eq）
JER YL-980（商品名，三菱化學股份有限公司製造，雙酚A型環氧樹脂，環氧當量：185 g/eq）(Epoxy resin)
YDCN-700-10 (trade name, manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., o-cresol novolac epoxy resin, epoxy equivalent: 209 g / eq)
EXA-830CRP (trade name, manufactured by DIC Corporation, bisphenol F-type epoxy resin, epoxy equivalent: 159 g / eq)
JER YL-980 (trade name, manufactured by Mitsubishi Chemical Corporation, bisphenol A epoxy resin, epoxy equivalent: 185 g / eq)

（酚樹脂）
HE-100C-30（商品名，空氣水（AIR WATER）股份有限公司製造，苯酚芳烷基樹脂，羥基當量：175 g/eq，軟化點為77℃）
MEH-7800H（商品名，明和化成股份有限公司製造，苯酚芳烷基樹脂，羥基當量為178 g/eq，軟化點為87℃）(Phenol resin)
HE-100C-30 (trade name, manufactured by Air Water Co., Ltd., phenol aralkyl resin, hydroxyl equivalent: 175 g / eq, softening point: 77 ° C)
MEH-7800H (trade name, manufactured by Meiwa Chemical Co., Ltd., phenol aralkyl resin, hydroxyl equivalent is 178 g / eq, and softening point is 87 ° C)

（高分子量成分）
HTR-860P-3CSP（商品名，長瀨化成股份有限公司製造，丙烯酸橡膠，重量平均分子量：80萬，Tg：12℃）
SG-70L（商品名，長瀨化成股份有限公司製造，丙烯酸橡膠，重量平均分子量：90萬，Tg：-13℃）(High molecular weight component)
HTR-860P-3CSP (trade name, manufactured by Nagase Chemical Co., Ltd., acrylic rubber, weight average molecular weight: 800,000, Tg: 12 ° C)
SG-70L (trade name, manufactured by Nagase Chemical Co., Ltd., acrylic rubber, weight average molecular weight: 900,000, Tg: -13 ° C)

（無機填料）
SC2050-HLG（商品名，雅都瑪（Admatechs）股份有限公司製造，二氧化矽填料分散液，平均粒徑：0.50 μm）
SE2050-MC（商品名，雅都瑪股份有限公司製造，二氧化矽填料分散液，平均粒徑為0.50 μm）(Inorganic filler)
SC2050-HLG (trade name, manufactured by Admatechs Co., Ltd., silicon dioxide filler dispersion, average particle size: 0.50 μm)
SE2050-MC (trade name, manufactured by YaduMa Co., Ltd., silicon dioxide filler dispersion, average particle size is 0.50 μm)

（偶合劑）
A-1160（商品名，日本邁圖高新材料（Momentive Performance Materials Japan）有限責任公司製造，γ-脲基丙基三乙氧基矽烷）
A-189（商品名，日本邁圖高新材料有限責任公司製造，γ-巰基丙基三甲氧基矽烷）(Coupling agent)
A-1160 (trade name, manufactured by Momentive Performance Materials Japan), γ-ureidopropyltriethoxysilane
A-189 (trade name, manufactured by Momentive Advanced Materials Co., Ltd., γ-mercaptopropyltrimethoxysilane)

（硬化促進劑）
2PZ-CN（商品名，四國化成工業股份有限公司製造，1-氰基乙基-2-苯基咪唑）
TPP-K（商品名，北興化學工業股份有限公司製造，四苯基鏻四苯基硼酸鹽）(Hardening accelerator)
2PZ-CN (trade name, manufactured by Shikoku Chemical Industry Co., Ltd., 1-cyanoethyl-2-phenylimidazole)
TPP-K (trade name, manufactured by Beixing Chemical Industry Co., Ltd., tetraphenylphosphonium tetraphenylborate)

表1
Table 1

＜接著片的製作＞（實施例1）
利用100目的過濾器對合成例1的接著劑組成物的清漆進行過濾，並進行真空脫泡。作為基材膜，準備厚度38 μm的已實施脫模處理的聚對苯二甲酸乙二酯（polyethylene terephthalate，PET）膜，將真空脫泡後的接著劑組成物的清漆塗佈於PET膜上。以90℃下5分鐘、繼而140℃下5分鐘的兩階段對所塗佈的清漆進行加熱乾燥。如此而獲得於PET膜上具有處於B階段狀態的厚度60 μm的接著膜的接著片。繼而，準備兩片接著片，以接著膜彼此接觸的方式配置，並於70℃的加熱板上進行層壓，製作包含兩層接著膜而具有厚度為120 μm的膜狀接著劑的接著片。<Production of Adhesive Film> (Example 1)
The varnish of the adhesive composition of Synthesis Example 1 was filtered through a 100-mesh filter, and vacuum defoamed. As a base film, a polyethylene terephthalate (PET) film having a thickness of 38 μm which has been subjected to a mold release preparation is prepared, and a varnish of the adhesive composition after vacuum defoaming is applied to the PET film. . The applied varnish was heat-dried in two stages of 5 minutes at 90 ° C and 5 minutes at 140 ° C. In this way, a bonding sheet having a bonding film having a thickness of 60 μm in a B-stage state on a PET film was obtained. Next, two adhesive sheets were prepared, arranged so that the adhesive films were in contact with each other, and laminated on a hot plate at 70 ° C. to produce an adhesive sheet including a two-layer adhesive film and having a film-like adhesive having a thickness of 120 μm.

（實施例2）
將合成例1的接著劑組成物的清漆變更為合成例2的接著劑組成物的清漆，除此以外，以與實施例1相同的方式製作包含兩層接著膜而具有厚度為120 μm的膜狀接著劑的接著片。(Example 2)
A film having a thickness of 120 μm was prepared in the same manner as in Example 1 except that the varnish of the adhesive composition of Synthesis Example 1 was changed to the varnish of the adhesive composition of Synthesis Example 2. Adhesive sheet of adhesive.

（實施例3）
將合成例1的接著劑組成物的清漆變更為合成例3的接著劑組成物的清漆，除此以外，以與實施例1相同的方式製作包含兩層接著膜而具有厚度為120 μm的膜狀接著劑的接著片。(Example 3)
A film having a thickness of 120 μm was prepared in the same manner as in Example 1 except that the varnish of the adhesive composition of Synthesis Example 1 was changed to the varnish of the adhesive composition of Synthesis Example 3. Adhesive sheet of adhesive.

（比較例1）
利用100目的過濾器對合成例1的接著劑組成物的清漆進行過濾，並進行真空脫泡。作為基材膜，準備厚度38 μm的已實施脫模處理的聚對苯二甲酸乙二酯（PET）膜，將真空脫泡後的接著劑組成物的清漆塗佈於PET膜上。以90℃下10分鐘、繼而150℃下10分鐘的兩階段對所塗佈的清漆進行加熱乾燥。如此而製作於PET膜上具有處於B階段狀態的單層的厚度120 μm的膜狀接著劑的接著片。(Comparative Example 1)
The varnish of the adhesive composition of Synthesis Example 1 was filtered through a 100-mesh filter, and vacuum defoamed. As a base film, a 38 μm-thick polyethylene terephthalate (PET) film was prepared, and the varnish of the adhesive composition after vacuum defoaming was applied to the PET film. The applied varnish was heat-dried in two stages of 10 minutes at 90 ° C and 10 minutes at 150 ° C. In this manner, an adhesive sheet having a film-like adhesive having a thickness of 120 μm having a single layer in a B-stage state on a PET film was produced.

（比較例2）
將90℃下10分鐘、150℃下10分鐘的兩階段的加熱乾燥變更為120℃下20分鐘、160℃下20分鐘的兩階段的加熱乾燥，除此以外，以與比較例1相同的方式製作於PET膜上具有處於B階段狀態的單層的厚度120 μm的膜狀接著劑的接著片。(Comparative Example 2)
Comparative Example 1 was performed in the same manner as in Comparative Example 1 except that the two-step heat-drying at 90 ° C and 10 minutes at 150 ° C was changed to the two-step heat-drying at 120 ° C and 20 minutes at 160 ° C. A 120 μm-thick film-shaped adhesive film having a single layer in a B-stage state on a PET film was produced.

（比較例3）
將合成例1的接著劑組成物的清漆變更為合成例2的接著劑組成物的清漆，除此以外，以與比較例2相同的方式製作於PET膜上具有處於B階段狀態的單層的厚度120 μm的膜狀接著劑的接著片。(Comparative Example 3)
A varnish of the adhesive composition of Synthesis Example 1 was changed to a varnish of the adhesive composition of Synthesis Example 2 except that a single layer having a B-stage state on a PET film was produced in the same manner as in Comparative Example 2. Adhesive sheet of a film-like adhesive having a thickness of 120 μm.

（比較例4）
將合成例1的接著劑組成物的清漆變更為合成例3的接著劑組成物的清漆，除此以外，以與比較例2相同的方式製作於PET膜上具有處於B階段狀態的單層的厚度120 μm的膜狀接著劑的接著片。(Comparative Example 4)
A varnish of the adhesive composition of Synthesis Example 1 was changed to a varnish of the adhesive composition of Synthesis Example 3, except that a single layer having a B-stage state on a PET film was produced in the same manner as in Comparative Example 2. Adhesive sheet of a film-like adhesive having a thickness of 120 μm.

＜各種物性的評價＞
對於實施例1～實施例3及比較例1～比較例4的接著片的膜狀接著劑，進行溶劑含有率、80℃下的剪切黏度、80℃下的儲存彈性係數、175℃加壓烘箱硬化後的埋入性、及滲出量的測定。＜ Evaluation of various physical properties ＞
The film-like adhesives of the adhesive sheets of Examples 1 to 3 and Comparative Examples 1 to 4 were subjected to a solvent content rate, a shear viscosity at 80 ° C, a storage elastic coefficient at 80 ° C, and 175 ° C pressure. Measurement of embedding property and exudation amount after oven hardening.

（溶劑含有率）
將基材膜自所述接著片剝離去除，將膜狀接著劑1 g添加至包含1質量%的2-(2-乙氧基乙氧基)乙醇的1,4-二噁烷溶液30 g中，利用振盪機攪拌6小時。藉由氣相層析法（gas chromatography）（載氣：氦，管柱溫度：140℃）對攪拌後的溶液進行測定，根據各溶劑與2-(2-乙氧基乙氧基)乙醇的波峰面積來估算膜狀接著劑的溶劑含有率（質量%）。將結果示於表2及表3中。(Solvent content)
The base film was peeled off from the adhesive sheet, and 1 g of a film-like adhesive was added to 30 g of a 1,4-dioxane solution containing 1% by mass of 2- (2-ethoxyethoxy) ethanol. The mixture was stirred with a shaker for 6 hours. The agitated solution was measured by gas chromatography (carrier gas: helium, column temperature: 140 ° C). According to each solvent and 2- (2-ethoxyethoxy) ethanol, The peak area was used to estimate the solvent content (mass%) of the film-like adhesive. The results are shown in Tables 2 and 3.

（80℃下的剪切黏度）
將基材膜自所述接著片剝離去除，於厚度方向上衝壓為10 mm見方，藉此而獲得10 mm見方的四邊形的積層體。於動態黏彈性裝置ARES（流變科學（Rheometric Scientific）公司製造）上安置直徑8 mm的圓形鋁板夾具，進而在此處安置所衝壓的膜狀接著劑的四邊形的積層體。其後，一邊以35℃施加5%的應變一邊以5℃/分鐘的升溫速度升溫至80℃，測定80℃下的剪切黏度（Pa·s）。將結果示於表2及表3中。(Shear viscosity at 80 ° C)
The base film was peeled and removed from the adhesive sheet, and punched into a 10 mm square in a thickness direction, thereby obtaining a 10 mm square laminated body. A circular aluminum plate clamp with a diameter of 8 mm was placed on the dynamic viscoelastic device ARES (manufactured by Rheometric Scientific), and then a quadrangular laminated body of the pressed film-shaped adhesive was placed there. Thereafter, the temperature was raised to 80 ° C. at a temperature increase rate of 5 ° C./minute while applying a 5% strain at 35 ° C., and the shear viscosity (Pa · s) at 80 ° C. was measured. The results are shown in Tables 2 and 3.

（80℃下的儲存彈性係數）
將基材膜自所述接著片剝離去除，並切為長4 cm、寬4 mm。安置於動態黏彈性裝置（製品名：Rheogel-E4000，UMB股份有限公司製造）並施加拉伸負荷，以頻率10 Hz、3℃/分鐘的升溫速度升溫至80℃，測定出80℃下的儲存彈性係數。將結果示於表2及表3中。(Storage elastic coefficient at 80 ° C)
The base film was peeled off from the adhesive sheet, and cut into a length of 4 cm and a width of 4 mm. The device was placed in a dynamic viscoelastic device (product name: Rheogel-E4000, manufactured by UMB Co., Ltd.), a tensile load was applied, and the temperature was raised to 80 ° C at a temperature rising rate of 10 Hz and 3 ° C / min. Coefficient of elasticity. The results are shown in Tables 2 and 3.

（175℃加壓烘箱硬化後的埋入性）
將所述接著片的膜狀接著劑於70℃下貼附於厚度50 μm的半導體晶圓（8吋）上。其次，將該等切割為7.5 mm見方而獲得半導體元件。另外，將膜狀接著劑HR-9004T-10（日立化成股份有限公司製造，厚度20 μm）於70℃下貼附於厚度50 μm的半導體晶圓（8吋）上。其次，將該等切割為3.0 mm見方而獲得晶片。將經單片化的帶有HR-9004T-10的晶片於130℃、0.20 MPa、2秒的條件下壓接於表面凹凸最大為6 μm的評價用基板，並以120℃加熱2小時，使其半硬化。其次，將帶有膜狀接著劑的7.5 mm半導體元件於120℃、0.20 MPa、2秒的條件下壓接於以所述方式獲得的樣品上。此時，以先前所壓接的帶有HR-9004T-10的晶片處於中央的方式進行位置對準。將所獲得的樣品投入加壓烘箱中，以3℃/分鐘的升溫速度自35℃升溫至175℃，並於175℃下加熱30分鐘。對以所述方式獲得的樣品，利用超音波影像裝置SAT（日立建機製造，產品編號FS200II，探針：25 MHz）來觀測空隙的有無，於觀測到空隙的情況下算出每單位面積的空隙的面積，並將該些分析結果作為埋入性進行評價。評價基準如下所述。將結果示於表2及表3中。
A：未觀察到空隙。
B：雖觀測到空隙，但其比例小於5面積%。
C：觀察到空隙，且其比例為5面積%以上。(Buried property after hardening in a 175 ° C pressure oven)
The film-shaped adhesive of the adhesive sheet was attached to a semiconductor wafer (8 inches) with a thickness of 50 μm at 70 ° C. Next, these were cut into a 7.5 mm square to obtain a semiconductor element. In addition, a film-shaped adhesive HR-9004T-10 (manufactured by Hitachi Chemical Co., Ltd., 20 μm thick) was attached to a semiconductor wafer (8 inches) having a thickness of 50 μm at 70 ° C. Next, these were cut into 3.0 mm squares to obtain a wafer. The singulated wafer with HR-9004T-10 was pressure-bonded to a substrate for evaluation with a maximum surface roughness of 6 μm under conditions of 130 ° C, 0.20 MPa, and 2 seconds, and heated at 120 ° C for 2 hours to Its semi-hardened. Next, a 7.5 mm semiconductor device with a film-like adhesive was pressure-bonded to the sample obtained in the above manner at 120 ° C, 0.20 MPa, and 2 seconds. At this time, position alignment was performed with the previously crimped HR-9004T-10 wafer in the center. The obtained sample was put into a pressure oven, heated from 35 ° C to 175 ° C at a temperature increase rate of 3 ° C / minute, and heated at 175 ° C for 30 minutes. For the samples obtained in the above manner, the presence or absence of voids was observed using an ultrasonic imaging device SAT (manufactured by Hitachi Construction Machinery, product number FS200II, probe: 25 MHz), and the voids per unit area were calculated when the voids were observed. The analysis results were evaluated as embeddedness. The evaluation criteria are as follows. The results are shown in Tables 2 and 3.
A: No void was observed.
B: Although voids are observed, the proportion is less than 5 area%.
C: A void is observed, and its ratio is 5 area% or more.

（滲出量的測定）
對於所述175℃加壓烘箱硬化後的埋入性的評價中為「A」及「B」者，測定滲出量。樣品是藉由與所述175℃加壓烘箱硬化後的埋入性中所製作的樣品相同的程序進行製作。自所獲得的樣品的四邊的中心，分別測量膜狀接著劑的露出量，將其平均值作為滲出量。將結果示於表2及表3中。(Measurement of Exudation)
The "A" and "B" in the evaluation of the embedding property after the 175 ° C pressure oven was cured, and the amount of bleeding was measured. The sample was prepared by the same procedure as the sample produced in the embedding property after the 175 ° C pressure oven hardening. From the centers of the four sides of the obtained sample, the amount of film-shaped adhesive exposed was measured, and the average value was taken as the amount of exudation. The results are shown in Tables 2 and 3.

表2
Table 2

表3
table 3

由表2及表3可知：實施例1～實施例3的包含兩層接著膜的接著片的埋入性良好，可抑制滲出。另一方面，比較例1的使用溶劑含有率超過1.5質量%的單層接著膜的接著片雖然埋入性良好，但無法抑制滲出。另外，使用80℃下的剪切黏度超過5000 Pa·s的單層接著膜的接著片的埋入性並不充分。根據該些結果而確認到：本發明的膜狀接著劑於熱壓接時具有良好的埋入性，並且能夠抑制滲出。As can be seen from Tables 2 and 3, the adhesiveness of the adhesive sheet including the two-layer adhesive film of Examples 1 to 3 was good, and the bleeding was suppressed. On the other hand, in Comparative Example 1, the adhesive sheet of the single-layer adhesive film using a solvent content of more than 1.5% by mass had good embedability, but was unable to suppress bleeding. In addition, the embedding property of the adhesive sheet of a single-layer adhesive film using a shear viscosity of more than 5000 Pa · s at 80 ° C. was insufficient. From these results, it was confirmed that the film-shaped adhesive of the present invention has good embedding properties during thermocompression bonding and can suppress bleeding.

2‧‧‧第一接著膜2‧‧‧ First Adhesive Film

4‧‧‧第二接著膜 4‧‧‧Second Adhesive Film

10‧‧‧膜狀接著劑 10‧‧‧ film adhesive

14‧‧‧基板 14‧‧‧ substrate

20‧‧‧基材膜 20‧‧‧ substrate film

30‧‧‧保護膜 30‧‧‧ protective film

41‧‧‧接著劑 41‧‧‧ Adhesive

42‧‧‧密封材 42‧‧‧sealing material

84、94‧‧‧電路圖案 84, 94‧‧‧ circuit pattern

88‧‧‧第一導線 88‧‧‧first lead

90‧‧‧有機基板 90‧‧‧ organic substrate

98‧‧‧第二導線 98‧‧‧Second Lead

100、110‧‧‧接著片 100, 110‧‧‧ followed

200‧‧‧半導體裝置 200‧‧‧ semiconductor device

Wa‧‧‧第一半導體元件 Wa‧‧‧First Semiconductor Element

Waa‧‧‧第二半導體元件 Waa‧‧‧Second Semiconductor Element

圖1為表示一實施形態的膜狀接著劑的示意剖面圖。FIG. 1 is a schematic cross-sectional view showing a film-shaped adhesive according to an embodiment.

圖2為表示一實施形態的接著片的示意剖面圖。 Fig. 2 is a schematic cross-sectional view showing a bonding sheet according to an embodiment.

圖3為表示另一實施形態的接著片的示意剖面圖。 Fig. 3 is a schematic cross-sectional view showing a bonding sheet according to another embodiment.

圖4為表示一實施形態的半導體裝置的示意剖面圖。 FIG. 4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment.

圖5為表示一實施形態的半導體裝置的製造方法的一系列步驟的示意剖面圖。 5 is a schematic cross-sectional view showing a series of steps in a method of manufacturing a semiconductor device according to an embodiment.

圖6為表示一實施形態的半導體裝置的製造方法的一系列步驟的示意剖面圖。 FIG. 6 is a schematic cross-sectional view showing a series of steps in a method of manufacturing a semiconductor device according to an embodiment.

圖7為表示一實施形態的半導體裝置的製造方法的一系列步驟的示意剖面圖。 7 is a schematic cross-sectional view showing a series of steps in a method of manufacturing a semiconductor device according to an embodiment.

圖8為表示一實施形態的半導體裝置的製造方法的一系列步驟的示意剖面圖。 8 is a schematic cross-sectional view showing a series of steps in a method of manufacturing a semiconductor device according to an embodiment.

圖9為表示一實施形態的半導體裝置的製造方法的一系列步驟的示意剖面圖。 9 is a schematic cross-sectional view showing a series of steps in a method of manufacturing a semiconductor device according to an embodiment.

Claims (6)

一種膜狀接著劑，其是於將第一半導體元件經由第一導線而以打線接合的方式連接於基板上，並且於所述第一半導體元件上壓接第二半導體元件而成的半導體裝置中，為了壓接所述第二半導體元件並且埋入所述第一導線的至少一部分而使用的膜狀接著劑， 其包括第一接著膜及積層於所述第一接著膜上的第二接著膜， 以膜狀接著劑總量為基準，所述膜狀接著劑的溶劑含有率為1.5質量%以下，且 所述膜狀接著劑的80℃下的剪切黏度為5000 Pa·s以下。A film-shaped adhesive is used in a semiconductor device in which a first semiconductor element is connected to a substrate by wire bonding via a first wire, and a second semiconductor element is crimped onto the first semiconductor element. A film-shaped adhesive used for crimping the second semiconductor element and burying at least a part of the first lead, It includes a first adhesive film and a second adhesive film laminated on the first adhesive film. Based on the total amount of the film-shaped adhesive, the solvent content of the film-shaped adhesive is 1.5% by mass or less, and The film adhesive has a shear viscosity at 80 ° C. of 5000 Pa · s or less. 如申請專利範圍第1項所述的膜狀接著劑，其中所述膜狀接著劑的厚度為3 μm～150 μm。The film-shaped adhesive according to item 1 of the scope of application, wherein the thickness of the film-shaped adhesive is 3 μm to 150 μm. 如申請專利範圍第1項或第2項所述的膜狀接著劑，其中所述膜狀接著劑的80℃下的儲存彈性係數為10 MPa以下。The film-shaped adhesive according to item 1 or 2 of the scope of application for a patent, wherein the film-shaped adhesive has a storage elastic coefficient at 80 ° C. of 10 MPa or less. 一種膜狀接著劑的製造方法，其為製造如申請專利範圍第1項至第3項中任一項所述的膜狀接著劑的方法，所述膜狀接著劑的製造方法包括： 將含有溶劑的第一接著劑組成物的清漆塗佈於基材上，並將所塗佈的所述第一接著劑組成物的清漆於50℃～150℃下加熱乾燥，製作以第一接著膜總量為基準而溶劑含有率為1.5質量%以下的第一接著膜的步驟； 將含有溶劑的第二接著劑組成物的清漆塗佈於基材上，並將所塗佈的所述第二接著劑組成物的清漆於50℃～150℃下加熱乾燥，製作以第二接著膜總量為基準而溶劑含有率為1.5質量%以下的第二接著膜的步驟；以及 將所述第一接著膜與所述第二接著膜貼合的步驟。A method for manufacturing a film-shaped adhesive, which is a method for manufacturing the film-shaped adhesive according to any one of claims 1 to 3 of the scope of patent application, and the method for manufacturing the film-shaped adhesive includes: A varnish of a first adhesive composition containing a solvent is applied to a substrate, and the applied varnish of the first adhesive composition is heated and dried at 50 ° C to 150 ° C to prepare a first adhesive. The first step of adhering the film based on the total film amount and the solvent content rate being 1.5% by mass or less; A varnish of a second adhesive composition containing a solvent is applied to a substrate, and the applied varnish of the second adhesive composition is heated and dried at 50 ° C to 150 ° C to prepare a second adhesive. A second film-adhering step based on the total film amount and the solvent content rate being 1.5% by mass or less; and A step of bonding the first adhesive film and the second adhesive film. 一種半導體裝置，其是將第一半導體元件經由第一導線而以打線接合的方式連接於基板上，並且於所述第一半導體元件上，經由如申請專利範圍第1項至第3項中任一項所述的膜狀接著劑而壓接第二半導體元件，從而將所述第一導線的至少一部分埋入所述膜狀接著劑中而成。A semiconductor device in which a first semiconductor element is connected to a substrate by wire bonding via a first wire, and the first semiconductor element is passed through any one of items 1 to 3 of the scope of patent application as described above. The film-shaped adhesive according to one item, wherein the second semiconductor element is pressure-bonded, and at least a part of the first lead is buried in the film-shaped adhesive. 一種半導體裝置的製造方法，其包括： 打線接合步驟，於基板上經由第一導線而電性連接第一半導體元件； 層壓步驟，於第二半導體元件的單面貼附如申請專利範圍第1項至第3項中任一項所述的膜狀接著劑；以及 黏晶步驟，經由所述膜狀接著劑而壓接貼附有所述膜狀接著劑的第二半導體元件，藉此而將所述第一導線的至少一部分埋入所述膜狀接著劑中。A method for manufacturing a semiconductor device includes: A wire bonding step, electrically connecting the first semiconductor element on the substrate via the first wire; In the laminating step, attaching the film-shaped adhesive as described in any one of claims 1 to 3 on the single side of the second semiconductor element; and In the die bonding step, the second semiconductor element to which the film-shaped adhesive is attached is pressure-bonded via the film-shaped adhesive, thereby burying at least a part of the first lead wire in the film-shaped adhesive. .
TW108101899A 2018-01-30 2019-01-18 Film-form adhesive, method for producing same, and semiconductor device and method for producing same TW201936828A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
??PCT/JP2018/003022 2018-01-30
PCT/JP2018/003022 WO2019150445A1 (en) 2018-01-30 2018-01-30 Film-form adhesive, method for producing same, and semiconductor device and method for producing same

Publications (1)

Publication Number Publication Date
TW201936828A true TW201936828A (en) 2019-09-16

Family

ID=67478032

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108101899A TW201936828A (en) 2018-01-30 2019-01-18 Film-form adhesive, method for producing same, and semiconductor device and method for producing same

Country Status (6)

Country Link
JP (1) JP7028264B2 (en)
KR (1) KR102491831B1 (en)
CN (1) CN111656499A (en)
SG (1) SG11202007034UA (en)
TW (1) TW201936828A (en)
WO (1) WO2019150445A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022176585A1 (en) * 2021-02-16 2022-08-25 株式会社巴川製紙所 Adhesive sheet for semiconductor device production and method for producing semiconductor device using same

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3952998B2 (en) * 2003-06-24 2007-08-01 松下電器産業株式会社 Circuit board sealing device and sealing method thereof
JP4816871B2 (en) * 2004-04-20 2011-11-16 日立化成工業株式会社 Adhesive sheet, semiconductor device, and method of manufacturing semiconductor device
JP4668001B2 (en) 2005-08-18 2011-04-13 リンテック株式会社 Dicing / die-bonding sheet and method for manufacturing semiconductor device using the same
JP2007277457A (en) 2006-04-10 2007-10-25 Fujikura Ltd Epoxy-base resin composition, coverlay, prepreg, metal clad laminate, and printed wiring board
JP2008103700A (en) * 2006-09-19 2008-05-01 Hitachi Chem Co Ltd Multi-layered die bond sheet, semiconductor device with semiconductor adhesive film, semiconductor device, and method of manufacturing semiconductor device
JP5380886B2 (en) * 2007-04-18 2014-01-08 日立化成株式会社 Wafer with adhesive and method for manufacturing the same
JP5374982B2 (en) * 2008-05-13 2013-12-25 日立化成株式会社 Manufacturing method of semiconductor device
JP2010040835A (en) * 2008-08-06 2010-02-18 Toshiba Corp Manufacturing method of multilayer semiconductor device
JP2010118554A (en) * 2008-11-13 2010-05-27 Nec Electronics Corp Semiconductor device and method of manufacturing the same
JP5403820B2 (en) * 2010-03-10 2014-01-29 リンテック株式会社 Manufacturing method of electronic substrate
JP5453678B2 (en) * 2010-06-29 2014-03-26 新光電気工業株式会社 Semiconductor package and manufacturing method thereof
JP5385988B2 (en) * 2010-08-23 2014-01-08 積水化学工業株式会社 Adhesive sheet and semiconductor chip mounting method
JP5736899B2 (en) * 2011-03-28 2015-06-17 日立化成株式会社 Film adhesive, adhesive sheet and semiconductor device
JP2012218170A (en) * 2011-04-04 2012-11-12 Sakai Chemical Corp Thermally and optically curable adhesive composition, and laminate of rubber and polyester using the same
JP2012238704A (en) * 2011-05-11 2012-12-06 Hitachi Chem Co Ltd Semiconductor device manufacturing method, semiconductor wafer with adhesive layer manufacturing method, semiconductor wafer with semiconductor element manufacturing method and semiconductor wafer laminate manufacturing method
JP5910630B2 (en) * 2011-05-20 2016-04-27 日立化成株式会社 Adhesive composition, film adhesive, adhesive sheet and semiconductor device
JP6133542B2 (en) * 2012-02-29 2017-05-24 日立化成株式会社 Film adhesive, adhesive sheet and semiconductor device
KR20160139043A (en) * 2012-03-08 2016-12-06 히타치가세이가부시끼가이샤 Adhesive sheet and method for manufacturing semiconductor device
KR20140138921A (en) * 2012-03-16 2014-12-04 다이셀에보닉 주식회사 Sealant paste and sealing method
JP6135202B2 (en) * 2013-03-08 2017-05-31 日立化成株式会社 Semiconductor device and manufacturing method of semiconductor device
JP5828881B2 (en) * 2013-12-24 2015-12-09 日東電工株式会社 Adhesive film, dicing die bond film, semiconductor device manufacturing method, and semiconductor device
WO2015129689A1 (en) * 2014-02-26 2015-09-03 日東電工株式会社 Manufacturing method of electronic component package
JP6603479B2 (en) * 2015-05-18 2019-11-06 日東電工株式会社 Adhesive film, dicing tape integrated adhesive film, multilayer film, semiconductor device manufacturing method and semiconductor device
JP2017120800A (en) * 2015-12-28 2017-07-06 富士通株式会社 Semiconductor device, semiconductor device manufacturing method, and electronic device
JP6191799B1 (en) * 2017-04-19 2017-09-06 日立化成株式会社 Semiconductor device, semiconductor device manufacturing method, and film adhesive
JP6222395B1 (en) * 2017-08-07 2017-11-01 日立化成株式会社 Film adhesive and dicing die bonding integrated adhesive sheet

Also Published As

Publication number Publication date
JP7028264B2 (en) 2022-03-02
CN111656499A (en) 2020-09-11
WO2019150445A1 (en) 2019-08-08
JPWO2019150445A1 (en) 2021-01-14
SG11202007034UA (en) 2020-08-28
KR20200112874A (en) 2020-10-05
KR102491831B1 (en) 2023-01-27

Similar Documents

Publication Publication Date Title
TW202035631A (en) Adhesive composition, film-like adhesive, adhesive sheet and method for producing semiconductor device
JP7472954B2 (en) Adhesive composition, film-like adhesive, adhesive sheet, and method for manufacturing semiconductor device
TW202045676A (en) Adhesive agent composition, film-like adhesive agent, adhesive sheet, and semiconductor device manufacturing method
TWI791751B (en) Semiconductor device manufacturing method and adhesive film
TWI774916B (en) Manufacturing method of semiconductor device, film-like adhesive, and adhesive sheet
JP7136200B2 (en) Semiconductor device, thermosetting resin composition and dicing die bonding integrated tape used for its manufacture
TW201936828A (en) Film-form adhesive, method for producing same, and semiconductor device and method for producing same
TWI829727B (en) Adhesive composition, film-like adhesive, adhesive sheet, and method for manufacturing semiconductor device
TWI785196B (en) Thermosetting resin composition, film adhesive, adhesive sheet and method for manufacturing semiconductor device
WO2022163465A1 (en) Semiconductor device, method for producing same, thermosetting resin composition, bonding film and integrated dicing/die bonding film
JP7140143B2 (en) Semiconductor device manufacturing method and film adhesive
TW202401588A (en) Adhesive film for semiconductors, dicing die bonding film, and method for manufacturing semiconductor device
TW201938720A (en) Method for producing semiconductor device and film-like adhesive