TW201322479A - Transfer apparatus of optical device layer and laser processing machine - Google Patents

Abstract

The subject of the present invention is to provide a transfer apparatus of optical device layer and a laser processing machine, which can emit a laser beam from the backside of an epitaxial substrate to a buffer layer for destroying the buffer layer to surely lift off the epitaxial substrate. The transfer apparatus of optical device layer in accordance with the present invention is provided to bond an optical device layer of optical device wafer, which is disposed on the surface of the epitaxial substrate via the buffer layer and laminated with an optical device layer, to a transfer substrate via a bonding metal layer for forming a composite substrate, and to lift off the epitaxial substrate by emitting a laser beam from the backside of the epitaxial substrate to the buffer layer for destroying the buffer layer, so as to transfer the optical device layer to the transfer substrate. The transfer apparatus of optical device layer is characterized by including a first holding mechanism, a second holding mechanism, and a separation mechanism. The first holding mechanism has a first holding surface for holding the transfer substrate side of the composite substrate. The second holding mechanism has a second holding surface opposite to the first holding surface for holding the epitaxial substrate side of the composite substrate. The separation mechanism enables the first holding mechanism and the second holding mechanism to move toward the relatively closed and relatively opposite directions.

Description

Light element layer transfer device and laser processing machine Field of invention

The present invention relates to a transfer device for a light element layer and a laser processing device, wherein the transfer device of the optical element layer is an optical element wafer in which an optical element layer is laminated via a buffer layer on a surface of an epitaxial substrate such as a sapphire substrate. The light element layer is bonded to the transfer substrate by the bonding metal layer, and the laser light is irradiated onto the buffer layer from the back side of the epitaxial substrate to break the buffer layer, and then the epitaxial substrate is peeled off, thereby moving the optical element layer to Remove the substrate.

Background of the invention

In the optical element manufacturing process, an optical element layer composed of an n-type semiconductor layer and a p-type semiconductor layer is laminated on the surface of an epitaxial substrate such as a disk-shaped sapphire substrate via a buffer layer to form a lattice-shaped plurality of cuts. The plurality of regions of the track division form an element such as a light-emitting diode or a laser diode to form an optical element wafer. Then, by dividing the optical element wafer along the dicing street, optical elements are manufactured (for example, refer to Patent Document 1).

Further, a technique for improving the brightness of an optical element is disclosed in Patent Document 2 below, which is a manufacturing method called lift-off, which is a surface of an epitaxial substrate such as a sapphire substrate constituting an optical element wafer. The optical element layer composed of the n-type semiconductor layer and the p-type semiconductor layer sandwiched by the buffer layer is made of a bonding metal such as gold (Au), platinum (Pt), chromium (Cr), indium (In), or palladium (Pd). The layer is bonded to a substrate such as molybdenum (Mo), copper (Cu), or bismuth (Si), and then the laser beam is irradiated onto the buffer layer from the back side of the epitaxial substrate to destroy the buffer layer. Thereby, the epitaxial substrate is peeled off, and the optical element layer is transferred to the transfer substrate.

Advanced technical literature Patent literature

Patent Document 1 Japanese Patent Laid-Open Publication No. 10-305420

Patent Document 2 Japanese Patent Publication No. 2005-516415

Summary of invention

When the buffer layer is irradiated with the laser light to break the buffer layer, the optical element layer is transferred to the transfer device by the peeling of the epitaxial substrate, but there is no transfer device capable of reliably peeling off the epitaxial substrate.

The present invention has been made in view of the above circumstances, and a main technical problem thereof is to provide a transfer of an optical element layer capable of reliably peeling off an epitaxial substrate by irradiating a laser beam to a buffer layer from the back side of the epitaxial substrate and destroying the buffer layer. Equipment and laser processing machine.

In order to solve the above-mentioned main technical problems, according to the present invention, there is provided an apparatus for transferring an optical element layer, wherein the optical element layer transfer device is an optical element crystal in which an optical element layer is laminated on a surface of an epitaxial substrate via a buffer layer. The circular light element layer is bonded to the transfer substrate via the bonding metal layer to form a composite substrate, and the laser beam is irradiated onto the buffer layer from the back side of the epitaxial substrate to break the buffer layer, and then the epitaxial substrate is peeled off. The optical element layer is transferred to the transfer substrate, and includes a first holding mechanism, a second holding mechanism, and a separation mechanism, wherein the first holding mechanism has a structure for holding the composite substrate a first holding surface on the substrate side; the second holding means having a second holding surface, the second holding surface facing the first holding surface and holding the epitaxial substrate side of the composite substrate; the separating mechanism The first holding mechanism and the second holding mechanism are moved in a direction in which they are relatively close to and away from each other.

It is preferable to include a peeling assist mechanism that relatively displaces the first holding mechanism and the second holding mechanism in a plane parallel to the first holding surface and the second holding surface.

Moreover, according to the present invention, there is provided a laser processing machine for irradiating a laser beam onto a buffer layer of a composite substrate to destroy a buffer layer, the composite substrate being interposed on a surface of the epitaxial substrate The optical element layer of the optical element wafer in which the optical element layer is laminated with the buffer layer is bonded to the transfer substrate via the bonding metal layer, and the laser processing machine includes the first holding mechanism, the laser beam irradiation mechanism, and the first a holding mechanism for holding a first holding surface on a side of the transfer substrate of the composite substrate; and the laser beam irradiation mechanism for irradiating the laser beam to the first holding mechanism a buffer layer of the composite substrate; the second holding mechanism has a second holding surface, wherein the second holding surface faces the first holding surface and faces the epitaxial substrate side of the composite substrate The separating mechanism moves the first holding mechanism and the second holding mechanism in a direction in which they are relatively close to and away from each other.

Preferably, the laser processing machine includes a composite substrate cassette, a transport mechanism, and a mounting mechanism, and the composite substrate cassette mounts a composite substrate cassette in which the composite substrate is housed; the transport mechanism is housed in the mounting The composite substrate of the composite substrate cassette of the composite substrate cassette is transferred to the first substrate In the holding mechanism, the second holding mechanism is placed in the workpiece holding/unloading position of the first holding mechanism and the epitaxial substrate cassette mounting portion on which the epitaxial substrate cassette can be placed.

In the transfer device of the optical element layer of the present invention, the first holding means, the second holding means, and the separating means are formed, and the transfer substrate on which the buffer layer is broken is sucked and held by the first holding means, and the second holding means is The holding mechanism attracts and holds the epitaxial substrate, and the separation mechanism is actuated to move the first holding mechanism and the second holding mechanism in a direction away from each other, thereby losing the function of combining the epitaxial substrate and the optical element layer by the buffer layer. Therefore, the epitaxial substrate can be easily peeled off, and the optical element layer can be transferred to the transfer substrate.

1‧‧ ‧ laser processing machine

2‧‧‧ device housing

3‧‧‧1st holding institution

3a, X, X1, Y, Z‧‧‧ arrows

4‧‧‧Laser light illumination mechanism

5‧‧‧Photographing agency

6a‧‧‧Composite substrate cassette mounting section

7‧‧‧ aligning agency

7a‧‧‧ Temporary placement

8‧‧‧2nd retention agency

9‧‧‧ Epitaxial substrate card

9a‧‧‧ Epitaxial substrate cassette mounting section

10‧‧‧Light component wafer

11‧‧‧ epitaxial substrate

11a‧‧‧ surface

11b‧‧‧Back

12‧‧‧Light component layer

12a‧‧‧ surface

13‧‧‧buffer layer

15‧‧‧Transfer substrate

15a‧‧‧ surface

16‧‧‧Join metal layer

31‧‧‧Support table

32‧‧‧Adsorption suction cup

34‧‧‧clip

41‧‧‧Laser light oscillating mechanism

42‧‧‧ concentrator

60‧‧‧Composite substrate card

61‧‧‧Composite substrate card table

70‧‧‧Removing and moving in

71‧‧‧Transportation agency

81‧‧‧Attraction retention mat

82‧‧‧Support shaft

82a‧‧‧Attraction pathway

83‧‧‧Separation agency

84‧‧‧Relocation agencies

100‧‧‧Composite substrate

121‧‧‧n type gallium nitride semiconductor layer

122‧‧‧p-type gallium nitride semiconductor layer

123‧‧‧Multiple cutting roads

124‧‧‧With optical components

811‧‧‧Abutment

811a‧‧‧ recess

812‧‧‧ pads

830‧‧‧Cylinder equipment

831‧‧‧ piston rod

841‧‧‧Support arm

F‧‧‧Ring frame

S‧‧ points

T‧‧‧ cutting tape

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a perspective view of a laser processing machine constructed in accordance with the present invention.

Fig. 2 is a cross-sectional view showing a second holding mechanism constituting a transfer device of the optical element layer of the laser processing machine shown in Fig. 1.

3(a) and 3(b) are a perspective view and a cross-sectional view showing the main part of the optical element wafer processed by the laser processing machine shown in Fig. 1.

4(a) and 4(b) are explanatory views of a transfer substrate bonding step of bonding a transfer substrate to the surface of the optical element layer of the optical element wafer shown in Fig. 3.

5 is a perspective view showing a state in which the transfer substrate side of the composite substrate bonded to the optical element wafer is attached to the surface of the dicing tape provided on the annular frame.

6(a) to 6(c) are explanatory views of a step of irradiating the laser light for the peeling of the laser beam from the back side of the epitaxial substrate to the buffer layer.

7(a) and 7(b) show the epitaxial substrate from the optical element layer and the optical element An explanatory diagram of a step of transferring the element layer to the optical element layer of the transfer substrate.

Form for implementing the invention

Hereinafter, preferred embodiments of the optical element layer transfer device and the laser processing machine constructed in accordance with the present invention will be described in detail with reference to the accompanying drawings.

A perspective view of a laser processing machine 1 constructed in accordance with the present invention is shown in FIG.

The laser processing machine 1 shown in Fig. 1 includes a device housing 2 having a rectangular parallelepiped shape. The first holding mechanism 3 that holds the composite substrate, which will be described later, moves in the (Y-axis direction) which is perpendicular to the arrow intersecting the machining feed direction (X-axis direction) indicated by the arrow X (Y-axis direction). The method is disposed in the device housing 2 . The first holding mechanism 3 has a suction chuck support table 31 and an adsorption chuck 32 attached to the adsorption chuck support table 31, and the suction mechanism (not shown) holds the composite substrate as a workpiece to be adsorbed. The first holding surface of the upper surface of the suction cup 32. Further, the first holding mechanism 3 is configured to be rotatable by a rotating device not shown. The suction chuck support table 31 of the first holding mechanism 3 configured as described above is provided with a clip 34 for fixing an annular frame to be described later. The first holding mechanism 3 thus constructed can be rotated by a rotary drive device not shown. Further, the laser processing machine 1 includes a machining feed mechanism (not shown) for feeding and feeding the first holding mechanism 3 in the X-axis direction, and an index not shown in the Y-axis direction. Degree feeding mechanism.

The laser processing machine 1 shown in the drawing has a laser beam irradiation mechanism 4 that performs laser processing on a composite substrate which is held as a workpiece after the first holding mechanism 3 described later. Laser light irradiation mechanism 4 has laser light The oscillating mechanism 41 is a concentrator 42 that condenses the laser beam oscillated by the laser ray oscillating mechanism 41. Further, the laser processing machine 1 has a condensed spot position adjusting mechanism (not shown) which causes the laser ray oscillating mechanism 41 to be perpendicular to the first holding which is the upper surface of the first holding mechanism 3 The direction of the face moves in the direction of the spot position adjustment indicated by the arrow Z.

The laser processing machine 1 shown in the drawing has an imaging unit 5 that captures the surface of a composite substrate to be processed which is held on the suction chuck 32 of the first holding mechanism 3 as a workpiece, and the detection is performed from the above. The area of the laser beam processed by the concentrator 42 of the laser beam illumination mechanism 4. The photographing mechanism 5 has an illumination mechanism for illuminating the workpiece, an optical system for capturing an area illuminated by the illumination mechanism, a photographing device (CCD) for capturing an image captured by the optical system, and the like, and transmitting the captured image signal The control mechanism will be described later.

The laser processing machine 1 shown in the drawing has a composite substrate cassette mounting portion 6a on which a composite substrate cassette as a workpiece to be described later is housed. The composite substrate cassette 61 is disposed on the composite substrate cassette mounting portion 6a so that the lifting mechanism (not shown) moves up and down. The composite substrate cassette 60 can be placed on the composite substrate cassette 61. Here, the composite substrate 100 accommodated in the composite substrate cassette 60 is attached to the surface of the dicing tape T attached to the annular frame F, and is accommodated in the composite substrate in a state of being supported by the annular frame F by the dicing tape T. Card 60. Further, the composite substrate 100 will be described in detail later.

The laser processing machine 1 shown in the drawing has a composite substrate 100 that has been processed before being processed in the composite substrate cassette 60, and is moved to a positioning mechanism 7 disposed in the temporary placement portion 7a, and the processed composite substrate 100 is carried in. Reward The loading/unloading mechanism 70 of the combined substrate cassette 60 transports the composite substrate 100 before being processed to the positioning mechanism 7 to the transport mechanism 71 of the first holding mechanism 3.

Further, the laser processing machine 1 shown in the drawing has a second holding mechanism 8 that holds the epitaxial substrate side of the composite substrate 100 that has been laser processed on the first holding mechanism 3, which will be described later. The second holding mechanism 8 will be described with reference to Fig. 2 . The second holding mechanism 8 shown in FIG. 2 has a suction holding pad 81 and a support shaft portion 82 that supports the suction holding pad 81. The suction holding pad 81 is composed of a disk-shaped base 811 and a pad 812. The base 811 may be formed of a suitable metal material, and the support shaft portion 82 is formed to protrude from the central portion of the upper surface thereof. The base 811 constituting the suction holding pad 81 has a circular recess 811a that is open below. A disk-shaped pad 812 is formed in the recessed portion 811 by a porous ceramic member. The second holding surface fitted to the lower surface of the pad 812 which is the concave portion 811a of the base 811 is disposed so as to face the first holding surface of the upper surface of the suction chuck 32 constituting the first holding mechanism 3. The circular concave portion 811a formed in the base 811 constituting the suction holding pad 81 is connected to a suction mechanism (not shown) by a suction passage 82a provided in the support shaft portion 82. Therefore, when the suction mechanism (not shown) is actuated, the negative pressure is applied to the second holding surface which is the lower surface of the pad 812 by the suction passage 82a and the concave portion 811a of the base 811, and the composite substrate 100 can be described later. The epitaxial substrate attracts the second holding surface held under the pad 812.

The second holding mechanism 8 configured as described above is coupled to the separating mechanism 83 that is movable in the vertical direction in Fig. 2 . In the embodiment shown in the drawing, the separating mechanism 83 is constituted by a cylinder device 830, and the piston rod 831 is coupled to the support shaft portion 82 constituting the second holding mechanism 8. The separating mechanism 83 configured as described above is lowered and placed by placing the second holding mechanism 8 on the upper side of the first holding mechanism 3. The second holding mechanism 8 and the first holding mechanism 3 are moved in a direction in which they are relatively close to and away from each other.

As shown in FIG. 1, the separating mechanism 83 to which the second holding mechanism 8 is coupled as described above is attached to the support arm 841 constituting the setting mechanism 84. The positioning mechanism 84 moves the support arm 841 in the Y-axis direction by a moving mechanism (not shown), and the second holding mechanism 8 attached to the support arm 841 by the separating mechanism 83 can be placed in FIG. (1) The workpiece loading/unloading position of the holding mechanism 3 and the epitaxial substrate cassette mounting portion 9a on which the epitaxial substrate cassette 9 described later can be placed. The epitaxial substrate cassette 9 can be placed on the epitaxial substrate cassette mounting portion 9a.

The laser processing machine 1 of the embodiment shown in the drawing has the above configuration, and the operation will be described below.

3(a) and 3(b) are a perspective view and an enlarged partial cross-sectional view showing the optical element wafer processed by the above-described laser processing machine 1.

The optical element wafer 10 shown in Fig. 3 (a) and Fig. 3 (b) is formed by epitaxial growth on the surface 11a of the epitaxial substrate 11 composed of a disk-shaped sapphire substrate having a diameter of 50 mm and a thickness of 600 μm. The optical element layer 12 is composed of an n-type gallium nitride semiconductor layer 121 and a p-type gallium nitride semiconductor layer 122. Further, when the optical element layer 12 composed of the n-type gallium nitride semiconductor layer 121 and the p-type gallium nitride semiconductor layer 122 is deposited by epitaxial growth on the surface of the epitaxial substrate 11, the surface 11a of the epitaxial substrate 11 is formed. A buffer layer 13 made of gallium nitride (GaN) and having a thickness of 1 μm is formed between the n-type gallium nitride semiconductor layer 121 on which the optical element layer 12 is formed. In the embodiment of the optical element wafer 10 thus constructed, the thickness of the optical element layer 12 is 10 μm. Further, as shown in FIG. 3(a), the optical element layer 12 is attached to a plurality of regions divided by a plurality of dicing streets 123 which are formed in a lattice shape. A light element 124 is formed.

In order to remove the epitaxial substrate 11 of the optical element wafer 10 from the optical element layer 12 and transfer it to the transfer substrate as described above, a transfer substrate bonding step of bonding the transfer substrate to the surface 12a of the optical element layer 12 is performed. That is, as shown in FIG. 4(a) and FIG. 4(b), the transfer substrate 15 made of a copper substrate having a thickness of 1 mm is bonded to the transfer substrate constituting the optical device wafer 10 by the bonding metal layer 16 made of tin. The surface 12a of the optical element layer 12 of the surface 11a of the crystal substrate 11. Further, molybdenum (Mo), bismuth (Si), or the like may be used for the transfer substrate 15, and gold (Au), platinum (Pt), chromium (Cr), indium (In), and the like may be used as the bonding metal forming the bonding metal layer 16. Palladium (Pd) and the like. The transfer substrate bonding step is performed by depositing the bonding metal on the surface 12a of the optical element layer 12 formed on the surface 11a of the epitaxial substrate 11 or the surface 15a of the transfer substrate 15 to form a bonding metal layer 16 having a thickness of about 3 μm. The bonding metal layer 16 is pressed against the surface 15a of the transfer substrate 15 or the surface 12a of the optical element layer 12, whereby the surface 15a of the transfer substrate 15 is bonded to the optical device wafer 10 by the bonding metal layer 16. The composite substrate 100 is formed on the surface 12a of the optical element layer 12.

As described above, the composite substrate 100 to which the surface 15a of the transfer substrate 15 is bonded to the surface 12a of the optical element layer 12 constituting the optical element wafer 10 is attached to the transfer substrate 15 side of the optical element wafer 10 as shown in FIG. The surface of the dicing tape T mounted on the annular frame F (composite substrate supporting step). Therefore, the back surface 11b of the epitaxial substrate 11 to which the optical element wafer 10 attached to the transfer substrate 15 on the surface of the dicing tape T is bonded is formed on the upper side. In this manner, the composite substrate 100 attached to the surface of the dicing tape T mounted on the annular frame F is housed in the composite substrate 匣 60 and can be placed on the composite substrate cassette 61.

As described above, the composite substrate 100 before being processed by the composite substrate cassette 60 placed on the composite substrate cassette 61 is placed on the composite substrate cassette 61 to be moved up and down by a lifting mechanism (not shown). position. Then, the workpiece carry-in/out mechanism 70 moves forward and backward to move the composite substrate 100 placed at the carry-out position to the registration mechanism 7. The composite substrate 100 that has been carried out to the alignment mechanism 7 is positioned at a predetermined position by the alignment mechanism 7. Then, the composite substrate 100 before processing by the alignment mechanism 7 is conveyed by the winding operation of the transport mechanism 71 to the first holding surface which is the upper surface of the suction chuck 32 constituting the first holding mechanism 3, and is sucked and held. The adsorption chuck 32 (composite substrate holding step). Then, the annular frame F on which the dicing tape T to which the composite substrate 100 is attached can be attached to the clip 34 of the first holding mechanism 3 to be fixed.

After performing the above-described composite substrate holding step, a laser light irradiation step is performed, the laser light irradiation step is performed to move the first holding mechanism 3 to the laser light irradiation mechanism 4 by operating the processing feed mechanism not shown. The laser light irradiation region where the concentrator 42 is located irradiates the laser light having a wavelength penetrating to sapphire and having absorption to gallium nitride (GaN) from the side of the back surface 11b (upper surface) of the epitaxial substrate 11 In the buffer layer 13, the buffer layer 13 is broken. As shown in FIG. 6(a), the laser light irradiation step moves the first holding mechanism 3 to the laser light irradiation region where the concentrator 42 of the laser beam irradiation mechanism 4 is located, and ends one end (in FIG. 6 ( A) is the left end) disposed directly below the concentrator 42 of the laser beam illumination mechanism 4. Next, as shown in FIG. 6(b), the spot diameter of the point S on the upper surface of the buffer layer 13 of the pulsed laser beam irradiated from the concentrator 42 is set to 30 μm. This dot diameter can be a spot diameter or a defocus point. Then, while the laser beam oscillating mechanism 41 is actuated, the pulse ray is irradiated from the concentrator 42. When the light is emitted, the first holding mechanism 3 is moved at a predetermined machining feed speed in the direction indicated by an arrow X1 in Fig. 6(a). Next, as shown in FIG. 6(c), when the other end of the epitaxial substrate 11 (the right end in FIG. 6(c)) reaches the irradiation position of the concentrator 42 of the laser beam irradiation mechanism 4, the pulse pulsation is stopped. At the same time, the irradiation of the light is irradiated, and the movement of the first holding mechanism 3 is stopped (the laser light irradiation step). This laser light irradiation step is performed on a region corresponding to the entire surface of the buffer layer 13. As a result, the buffer layer 13 is broken, and the bonding function of the epitaxial substrate 11 and the optical element layer 12 by the buffer layer 13 is lost.

The processing conditions of the above-described laser light irradiation step are set as follows.

Light source: YAG pulse laser

Wavelength: 266nm

Repeat frequency: 50kHz

Average output: 0.12W

Pulse width: 100ps

Dot diameter: Φ30μm

Processing feed rate: 600mm / sec

In addition, the laser light illuminating step of damaging the buffer layer 13 may be performed by arranging the concentrator 42 on the outermost periphery of the epitaxial substrate 11 and rotating the first holding mechanism 3 to move the concentrator 42 toward the center. The laser beam is irradiated onto the entire surface of the buffer layer 13, and the buffer layer 13 is destroyed, so that the bonding function of the epitaxial substrate 11 and the optical element layer 12 by the buffer layer 13 is lost.

As described above, after the laser light irradiation step of breaking the buffer layer 13 is performed, the first holding mechanism 3 holding the composite substrate 100 returns to the position where the composite substrate 100 is initially sucked and held. Next, in the figure of the above-mentioned placement mechanism 84 The second holding mechanism 8 is placed directly above the first holding mechanism 3, and the separating mechanism 83 constituted by the cylinder device 830 is actuated to lower the second holding mechanism 8 as shown in Fig. 7 ( In a), the second holding surface which is the lower surface of the pad 812 constituting the suction holding pad 81 is brought into contact with and held by the upper surface of the back surface 11b of the epitaxial substrate 11 on which the composite substrate 100 of the first holding mechanism 3 is formed. Then, the upper surface of the back surface 11b of the epitaxial substrate 11 on which the composite substrate 100 is formed is sucked and held by the second holding surface which is the lower surface of the pad 812 constituting the suction holding pad 81 by the suction mechanism (not shown). Therefore, the composite substrate 100 is transferred and held by the first holding mechanism 3 by the dicing tape T, and the epitaxial substrate 11 can be sucked and held by the second holding mechanism 8. Next, as shown in FIG. 7(a), the second holding mechanism 8 is rotated in the direction indicated by the arrow 3a by using a rotary driving device (not shown) for rotationally driving the first holding mechanism 3. Predetermined angle. As a result, by performing the above-described laser light irradiation step, the buffer layer 13 which loses the bonding function between the epitaxial substrate 11 and the optical element layer 12 can be further broken. Therefore, the rotation driving device (not shown) for rotationally driving the first holding mechanism 3 has a relationship between the first holding mechanism and the second holding mechanism in a plane parallel to the first holding surface and the second holding surface. The function of the stripping auxiliary mechanism. As described above, when the buffer layer 13 is broken, as shown in FIG. 7(b), the separating mechanism 83 constituted by the cylinder device 830 is actuated to raise the second holding mechanism 8. As a result, the epitaxial substrate 11 is peeled off from the optical element layer 12 while being held by the lower surface of the pad 812 constituting the suction holding pad 81 of the second holding mechanism 8, and the optical element layer 12 is transferred to the transfer substrate 15 ( Optical element layer transfer step). Therefore, the first holding mechanism 3, the second holding mechanism 8, and the separating mechanism 83 have the epitaxial substrate 11 formed by peeling off the composite substrate 100 to form the optical element. The layer 12 is transferred to the function of the transfer means of the optical element layer of the transfer substrate 15.

In this manner, the transfer device of the optical element layer including the first holding mechanism 3 and the second holding mechanism 8 and the separation mechanism 83 attracts the transfer substrate 15 of the composite substrate 100 on which the laser light irradiation step of the destruction buffer layer 13 is performed. While holding the first holding mechanism 3, the second holding mechanism 8 sucks and holds the epitaxial substrate 11, and the separating mechanism 83 is actuated, thereby moving the second holding mechanism 8 in a direction away from the first holding mechanism 3. The bonding function of the epitaxial substrate 11 and the optical element layer 12 by the buffer layer 13 is lost, so that the epitaxial substrate 11 can be easily peeled off. Further, in the embodiment shown in the drawing, the second holding mechanism 8 is rotated by a predetermined angle by moving the first holding mechanism 3 before the first holding mechanism 3 moves away from the first holding mechanism 3 by moving the separating mechanism 83. Further, the buffer layer 13 is further damaged, so that the peeling of the epitaxial substrate 11 is easier. Further, in the embodiment shown in the drawings, an example in which the first holding mechanism 3 is rotated by a predetermined angle is shown, and the first holding mechanism may be provided by rotating the second holding mechanism 8 by a predetermined angle. 2 The peeling assist mechanism that the holding mechanism is relatively displaced in the plane parallel to the first holding surface and the second holding surface, and the second holding mechanism 8 is rotated by a predetermined angle.

After the optical element layer transfer step is performed, the moving mechanism (not shown) of the mounting mechanism 84 is actuated, and the second holding mechanism 8 is placed on the epitaxial substrate cassette mounting portion 9a shown in FIG. Immediately above the epitaxial substrate cassette 9, the separation mechanism 83 constituted by the cylinder device 830 is further actuated to lower the second holding mechanism 8. Then, by releasing the suction release by the suction holding pad 81 constituting the second holding mechanism 8, the epitaxial substrate 11 held by the suction holding pad 81 is housed in the epitaxial substrate cassette 9.

On the other hand, the first holding mechanism 3 that sucks and holds the transfer substrate 15 on which the optical element layer 12 is transferred is sucked and held, and the fixing of the annular frame F by the clip 34 is released. Then, the transport mechanism 71 is moved, and the transfer substrate 15 on which the optical element layer 12 is transferred (the state attached to the dicing tape T attached to the annular frame F) is transported to the aligning mechanism 7. Then, the workpiece loading/unloading mechanism 70 is actuated, and the transfer substrate 15 transferred to the alignment mechanism 7 and the optical element layer 12 is placed in a predetermined position of the composite substrate cassette 60.

3‧‧‧1st holding institution

3a‧‧‧Arrow

8‧‧‧2nd retention agency

10‧‧‧Light component wafer

11‧‧‧ epitaxial substrate

12‧‧‧Light component layer

15‧‧‧Transfer substrate

81‧‧‧Attraction retention mat

82‧‧‧Support shaft

82a‧‧‧Attraction pathway

83‧‧‧Separation agency

100‧‧‧Composite substrate

811‧‧‧Abutment

811a‧‧‧ recess

812‧‧‧ pads

831‧‧‧ piston rod

T‧‧‧ cutting tape

Claims (4)

A device for transferring an optical element layer is an optical element layer of an optical element wafer in which an optical element layer is laminated on a surface of an epitaxial substrate via a buffer layer, and is bonded to a transfer substrate via a bonding metal layer to form a composite substrate. After the laser beam is irradiated onto the buffer layer from the back side of the epitaxial substrate to break the buffer layer, and the epitaxial substrate is peeled off, the optical element layer is transferred to the transfer substrate, and the first holding means is included. The first holding surface is provided on the side of the transfer substrate on which the composite substrate is held, and the second holding surface has a second holding surface that faces the first holding surface and holds the epitaxial layer of the composite substrate. The substrate side and the separating mechanism move the first holding mechanism and the second holding mechanism in a direction in which they are relatively close to and away from each other. The apparatus for transferring an optical element layer according to the first aspect of the invention includes a peeling assisting mechanism for maintaining the first holding means and the second holding means with the first holding surface and the second holding means Relatively displaced in the plane parallel to the surface. A laser processing machine is characterized in that a laser beam is irradiated on a buffer layer of a composite substrate to destroy a buffer layer, and the composite substrate is an optical element crystal having an optical element layer laminated on a surface of the epitaxial substrate via a buffer layer. The circular light element layer is bonded to the transfer substrate via a bonding metal layer, and the laser processing machine includes a first holding mechanism and a transfer substrate side for holding the composite substrate. The first holding surface; the laser beam irradiation means irradiates the laser beam to the buffer layer of the composite substrate held by the first holding means; and the second holding means has the second holding surface, the first a holding surface in which the first holding mechanism faces the first holding surface and holds the epitaxial substrate side of the composite substrate, and a separating mechanism that relatively closes the first holding mechanism and the second holding mechanism And move in the direction of departure. A laser processing machine according to claim 3, comprising: a composite substrate cassette, wherein a composite substrate card in which the composite substrate is housed is placed; and the transport mechanism is housed in the composite a composite substrate on which the composite substrate of the substrate cassette is transferred to the first holding mechanism; and a mounting mechanism for placing the second holding mechanism in the workpiece holding/removing position of the first holding mechanism and being mountable The epitaxial substrate is stuck on the epitaxial substrate card holder.