TW201109355A - Release layer materials, substrate structures comprising the same and fabrication method thereof - Google Patents

Release layer materials, substrate structures comprising the same and fabrication method thereof Download PDF

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TW201109355A
TW201109355A TW98131014A TW98131014A TW201109355A TW 201109355 A TW201109355 A TW 201109355A TW 98131014 A TW98131014 A TW 98131014A TW 98131014 A TW98131014 A TW 98131014A TW 201109355 A TW201109355 A TW 201109355A
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release layer
substrate
support carrier
flexible
substrate structure
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TW98131014A
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Chinese (zh)
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TWI354678B (en
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Hsueh-Yi Liao
Chyi-Ming Leu
Chun-Wei Su
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Ind Tech Res Inst
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Abstract

A release layer material of cyclic olefin copolymers (COC) applied in flexible electrical devices represented by Formula (I) or (II) is provided. The invention also provides a substrate structure including the release layer. The substrate structure includes a carrier, a release layer overlying the carrier with one or more blocks with a first area, wherein the release layer includes cyclic olefin copolymers (COC) represented by the disclosed Formula (I) or (II), and a flexible substrate overlying the release layer and the carrier with a second area, wherein the second area is larger than the first area and the flexible substrate has a greater adhesion force than that of the release layer to the carrier. The invention further provides a method for fabricating the substrate structure. In Formula (I) or (II), X is 30-70, X+Y is 100 and R is -H, -CH3 or -C2H5.

Description

201109355 六、發明說明: 【發明所屬之技術領域】 本發明係有關於-種離型層材料,特別是有關於一種 環烯共聚物離型層材料及包括該離型層之基板結構。 【先前技術】 軟性顯不器已成為新世代新穎顯示器的發展趨勢,而 發展主動式軟性顯不器更是主流趨勢,世界各大研發公司 均由現行厚重且易破碎的玻璃基板跨入非玻璃系且 輕的軟性塑膠基板材料發展,並朝向主動式全彩的tft顯 示面板邁進。目前,針對開發主動式軟性顯示器的技術有 a-Si TFT、LPTS TFT及0TFT三種選擇,在顯示介質的部 分包含 EPD、ECD、LCD 及 EL。 在製造方式的選擇可以分成batch type及roll t〇 r〇u 兩種方式,若選擇batch type方式進行tft元件製造,可 利用現有TFT s支備進行製作,具有相當優勢,但必須發展 所§胃基板轉移或離膜技術’將軟性顯示器從玻璃上轉移到 其它塑膠基板上或取下。而以roll to r〇ll方式則必須利用 全新設備來進行,並必須克服轉動及接觸所引發的相關問 題。 以batch type方式進行製造TFT結構主要有三種方 式,一為SEC利用PES當基板轉貼於矽晶片上,利用低溫 a-Si TFT 技術開發 7” VGA (640x480) piastic LCD,而此法 需要一耐高溫、低熱膨脹係數、低光遲滯性且抗化性佳的 高透明基板材料,並配合適當的膠材及良好的離型技術。 5 201109355 二為Seiko Epson以LPTS transfer技術進行TFT背板開 發,於玻璃基板上進行LPTS TFT背板製作,完成後,Seiko Epson再利用雷射回火(iasel· annealing)。所謂transfer技術 主要優點為TFT元件製程溫度不受塑膠基板的限制,因 此,有較好的特性,故一般具高透光性塑膠基板便可以被 用來使用,但其transfer機制及轉貼技術顯得更加重要。另 外’第三種為Philips利用聚亞醯胺(PI)塗佈於玻璃上,進 行a-Si TFT-EPD顯示器的開發,並利用transfer技術將PI 基板於玻璃上取下。此技術雖然利用傳統PI塑膠基板而具 有耐高溫的特性,直接塗佈於玻璃上,不但製程溫度可以 超過300°C ’又可以省去轉貼的步驟,但仍必須利用雷射 去除玻璃基板。 由於與軟性基板材料不匹配且熱阻低,因此,傳統離 型層材料並不適合應用於TFT製程。 【發明内容】 本發明之一實施例,提供一種應用於軟性電子元件之 環烯共聚物離型層材料,具有下列化學式(I)或(II): 201109355201109355 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a release layer material, and more particularly to a cyclic olefin copolymer release layer material and a substrate structure including the release layer. [Prior Art] Soft display has become the development trend of the new generation of new displays, and the development of active soft display is the mainstream trend. The world's major R&D companies are all from the current heavy and fragile glass substrate into the non-glass. The light and soft plastic substrate material is developed and moves towards the active full color tft display panel. At present, technologies for developing active flexible displays include a-Si TFT, LPTS TFT, and 0TFT, and the components of the display medium include EPD, ECD, LCD, and EL. In the choice of manufacturing methods can be divided into batch type and roll t〇r〇u two ways, if you choose the batch type method for tft component manufacturing, you can use the existing TFT s support for production, has considerable advantages, but must develop the § stomach Substrate Transfer or Film Release Technology 'Transfers the flexible display from the glass to other plastic substrates or removes it. The roll to r〇ll method must be carried out with new equipment and must overcome the problems caused by the rotation and contact. There are three main ways to manufacture TFT structures in batch type. One is SEC using PES to transfer the substrate onto the germanium wafer, and the 7" VGA (640x480) piastic LCD is developed using low temperature a-Si TFT technology. This method requires a high temperature resistance. High transparent substrate material with low thermal expansion coefficient, low light hysteresis and good chemical resistance, combined with appropriate rubber and good release technology. 5 201109355 Second, Seiko Epson develops TFT backplane with LPTS transfer technology. The LPTS TFT backplane is fabricated on the glass substrate. After completion, Seiko Epson uses laser igniting. The main advantage of the transfer technology is that the TFT component process temperature is not limited by the plastic substrate. Therefore, there is a better Characteristics, so generally high-transparency plastic substrate can be used, but its transfer mechanism and transfer technology is more important. In addition, 'the third is Philips using poly-liminamide (PI) coated on glass, Developed a-Si TFT-EPD display and removed the PI substrate on the glass by transfer technology. This technology has high resistance to the use of traditional PI plastic substrates. The temperature characteristics are directly applied to the glass, not only the process temperature can exceed 300 ° C. The step of transferring can be omitted, but the glass substrate must still be removed by laser. Due to the mismatch with the flexible substrate material and low thermal resistance, Therefore, the conventional release layer material is not suitable for use in a TFT process. SUMMARY OF THE INVENTION One embodiment of the present invention provides a cyclic olefin copolymer release layer material for use in a flexible electronic component, having the following chemical formula (I) or ( II): 201109355

γ (II) 曱基或ii(i)或(η)中,χ為30〜7〇,χ+γ為i〇〇,r為氫、 本發明之一一 基板結構,^貫施例’提供—種應祕軟性電子元件之 覆蓋該支撐=二體;一離型層U 一面積 括環烯共聚物/i或複數傭塊’其中該離型層包 板,以一第有上述化學式(1)或(n);以及一軟性基 二面藉女一積覆蓋該離型層與該支撐載體,其中該第 料塗佈於_層與切賴±,㈣成―㈣基板妹 適合應用純性基_分離。 本發明之-實施例,提供一種應用於 基板結構之製造方法’包括:提供—支撐載體電3之 η蓋;離型層於該㈣體上,形成一或複數t 塊’其中_型層包括環稀共聚物,具有上述化學式(1)或 3二:以:二二面積覆蓋一軟性基板於該離型層與該支 芽,八中该第二面積大於該第一面積且該軟性纂板 7 201109355 對該支撐載體之密著度大於該離型層對該支撐載體之密著 度。 本發明提供一種可藉由現有半導體設備製作的應用於 軟性電子元件的基板結構,其利用兩種離型層與支撐載體 密著度的差異,先將密著度較差的離型層以較小面積成型 於支撐載體上,再將與支撐載體密著度較佳的離型層(例如 軟性顯示器基板)以較大面積覆蓋在較差密著度的離型層 上並與支撐載體有接觸。以此方式製作的基板結構,可確 保其在TFT製程中不會脫落,並在完成製程後,將外邊未 含密著度較差離型層的部分切除,即可輕易分離密著度較 佳的離型層與支撐載體。分離後,密著度較佳的離型層(例 如軟性顯示器基板)仍可保持完整,不致損傷。 為讓本發明之上述目的、特徵及優點能更明顯易懂, 下文特舉一較佳實施例,並配合所附圖式,作詳細說明如 下: 【實施方式】 本發明之一實施例,提供一種應用於軟性電子元件之 環烯共聚物離型層材料,具有下列化學式⑴或(Π)。 r 1 r Η Η 1 寸 ch2-ch2—]~~——C——C---γ (II) fluorenyl or ii(i) or (η), χ is 30~7〇, χ+γ is i〇〇, r is hydrogen, one of the substrate structures of the present invention, - a cover of the soft electronic component of the support = two bodies; a release layer U an area of a ring olefin copolymer / i or a plurality of commissions 'where the release layer is coated with a chemical formula (1) Or (n); and a soft base on both sides of the cover of the release layer and the support carrier, wherein the first material is applied to the _ layer and the cut-off ±, (4) into - (four) substrate sister suitable for application purity Base_separation. According to an embodiment of the present invention, there is provided a method of manufacturing a substrate structure comprising: providing a n-cover for supporting a carrier 3; and a release layer on the (four) body to form one or a plurality of t-blocks, wherein the _-type layer comprises a ring-diffusing copolymer having the above chemical formula (1) or 3: covering a flexible substrate in the release layer and the branch bud in a two-two area, wherein the second area is larger than the first area and the soft raft 7 201109355 The degree of adhesion to the support carrier is greater than the adhesion of the release layer to the support carrier. The invention provides a substrate structure which can be applied to a flexible electronic component by using a conventional semiconductor device, which utilizes the difference in adhesion between the two release layers and the support carrier, and firstly makes the release layer with poor adhesion less The area is formed on the support carrier, and the release layer (such as a flexible display substrate) having a better adhesion to the support carrier is overlaid on the release layer of the poor adhesion with a large area and is in contact with the support carrier. The substrate structure produced in this way can ensure that it does not fall off during the TFT process, and after the process is completed, the portion of the release layer which is not densely attached to the outside is removed, and the adhesion degree can be easily separated. Release layer and support carrier. After separation, the release layer (e.g., the flexible display substrate) with better adhesion can remain intact without damage. The above described objects, features and advantages of the present invention will become more apparent and understood. A cyclic olefin copolymer release layer material applied to a flexible electronic component having the following chemical formula (1) or (Π). r 1 r Η Η 1 inch ch2-ch2—]~~——C——C---

201109355201109355

γ (ΐΐ) 化學式⑴或(II)中,X可為30〜70,Χ+Υ可為100,R 可為氫、曱基或乙基。 為達製程均一性,上述離型層材料可溶於有機溶劑。 請參閱第1圖,根據一實施例,說明本發明之一應用 於軟性電子元件之基板結構。基板結構10包括一支撐載體 12、一離型層14以及一軟性基板16。離型層14以一第一 面積A1覆蓋支撐載體12,形成一或複數個區塊(如第1A 圖所示)。離型層14包括環烯共聚物,具有上述化學式(I) 或(II) 0軟性基板Ιό以一第二面積Λ2覆蓋離型層14與支 撐載體12。值得注意的是,第二面積A2大於第一面積A1 且軟性基板16對支撐載體12的密著度大於離型層14對支 撐載體12的密著度。本發明並未限定離型層區塊之大小、 形狀及配置。 支撐載體12可包括玻璃或矽晶圓。離型層14對支撐 載體12的密著度為0B〜1B (百格刀密著度測試)。 離型層14的固含量可為1〜20%。離型層14的厚度可 為0.2〜20微米,較佳為0.5〜5微米。 軟性基板16可為一軟性顯示器基板,例如一主動式軟 性顯示器基板,其對支撐載體12的密著度為1〜5B(百格刀 201109355 密著度測試)。軟性基板16可由例如聚亞醯胺(polyimide, PI)、聚碳酸酯(polycarbonate, PC)、聚韃楓(polyethersulfone, PES)、聚丙稀酸醋(polyacrylate,PA)、聚原冰烯 (polynorbornene,PNB)、聚乙烯對苯二曱酸酯(polyethylene terephthalate, PET)、聚趟趟酮(polyetheretherketone, PEEK)、聚萘二曱酸乙二醇醋(polyethylene naphthalate, PEN)或聚醚亞醯胺(polyetherimide,PEI)的材料所構成。 若軟性基板16為透明聚亞醯胺(PI)時,可具有下列化 學式(III):γ (ΐΐ) In the formula (1) or (II), X may be 30 to 70, Χ+Υ may be 100, and R may be hydrogen, decyl or ethyl. In order to achieve process uniformity, the above release layer material is soluble in an organic solvent. Referring to Fig. 1, a substrate structure of a soft electronic component according to one embodiment of the present invention will be described. The substrate structure 10 includes a support carrier 12, a release layer 14, and a flexible substrate 16. The release layer 14 covers the support carrier 12 with a first area A1 to form one or more blocks (as shown in Figure 1A). The release layer 14 comprises a cyclic olefin copolymer having a soft substrate of the above formula (I) or (II) and covering the release layer 14 and the support carrier 12 with a second area Λ2. It is to be noted that the second area A2 is larger than the first area A1 and the adhesion of the flexible substrate 16 to the support carrier 12 is greater than the adhesion of the release layer 14 to the support carrier 12. The invention does not limit the size, shape and configuration of the release layer block. The support carrier 12 can include a glass or germanium wafer. The adhesion of the release layer 14 to the support carrier 12 is 0B to 1B (100-gauge adhesion test). The release layer 14 may have a solid content of 1 to 20%. The release layer 14 may have a thickness of 0.2 to 20 μm, preferably 0.5 to 5 μm. The flexible substrate 16 can be a flexible display substrate, such as an active flexible display substrate, which has a adhesion to the support carrier 12 of 1 to 5 B (100 knives 201109355 adhesion test). The flexible substrate 16 may be, for example, polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polyacrylate (PA), polynorbornene (polynorbornene, PNB), polyethylene terephthalate (PET), polyetheretherketone (PEEK), polyethylene naphthalate (PEN) or polyetherimide ( Polyetherimide, PEI) is composed of materials. If the flexible substrate 16 is a transparent polyiminamide (PI), it may have the following chemical formula (III):

曱基、三氟曱基、經基、-OR (R可為碳數1〜18的院基)、 漠、氣或蛾,Z 可為·〇-、-CH2-、-C(CH3)2-、-S〇2_、- Ar_〇-Ar-、 -Ar-CH2-Ar- -Ar-C(CH3)2-Ar-或-Ar-S〇2_Ar- (Ar 可為苯Sulfhydryl, trifluoromethyl, meridine, -OR (R can be a carbon number of 1 to 18), desert, gas or moth, Z can be ·〇-, -CH2-, -C(CH3)2 -, -S〇2_, - Ar_〇-Ar-, -Ar-CH2-Ar--Ar-C(CH3)2-Ar- or -Ar-S〇2_Ar- (Ar can be benzene

環)。B可包括□、 201109355 σΌ, 或V ν,Χ與γ可為氫、曱基、三氟曱基、羥基、-〇R (R可為碳數1〜18的烷基)、溴、氯或碘,Z可為-0-、-CH2-、 -C(CH3)2-、-S02-、-Ar-0-Ar-、-Ar-CH2-Ar-、-Ar_C(CH3)2-Ar-或-Ar-S〇2-Ar- (Ar可為苯環)。η可為大於1的整數。 軟性基板16中更可添加矽氧烷化合物或二氧化矽,以 增加軟性基板16對支撐載體12的密著度。 本發明環烯共聚物離型層材料塗佈於支撐載體(例如 玻璃基板)上,形成一或複數個區塊。之後,將軟性基板材 料塗佈於離型層與支撐載體上,以形成一雙層基板結構, 適合應用於軟性基板的分離。 第2Α〜2D圖係說明本發明之一實施例,一種應用於軟 性電子元件基板結構之製造方法。 請參閱第2Α圖,首先,提供一其上塗佈有一離型層 14的支撐載體12。離型層14塗佈於支撐載體12上形成一 或複數個區塊(如第1Α圖所示)。塗佈面積為一第一面積 Α1。離型層14包括環烯共聚物,具有上述化學式(I)或(II)。 本發明並未限定離型層區塊之大小、形狀及配置。 接著,請參閱第2Β圖,以例如塗佈的方式覆蓋一軟性 基板16於離型層14與支撐載體12上。軟性基板16覆蓋 離型層14與支撐載體12的面積為一第二面積Α2。值得注 意的是,第二面積Α2大於第一面積Α1且軟性基板16對 支撐載體12的密著度大於離型層14對支撐載體12的密著 度。 接著,請參閱第2C圖,以離型層14的兩端點為切除 201109355 點(c,c’),切除部分軟性基板16與支撐裁體1 型層14、軟性基板16與支撐載體12,如第,以分離離 本發明提供一種可藉由現有半導體^圖所示。 軟性電子元件的基板結構,其利用兩種離^乍的應用於 密著度的差異,先將密著度較差的離型層以1與支撐裁體 於支撐載體上,再將與支撐載體密著度較佳又小面積成型 軟性顯示器基板)以較大面積覆蓋在較差密二:型層(例如 上並與支#_有接觸。以此方式製作的基=的離型層 保其在TFT製程中不會脫^,並在完成製^ Ί ’可確 :::度較差離型層的部分切除,即可輕易分離密D未 佳的離型層與支撐載體。分離後,密著度 者度較 如軟性顯示器基板)仍可保持完整,不致損傷。、型層(例 【實施例】 本發明的實施方法為先將TFT用的玻 5cm I5cm)進行離型層的製作,其中可利用大小不同的中 空塾片來控制離型層的面積(如8cm*8cm),再將基板材料 以大於離型層面積(如l〇cm*l〇cm)成型於含有離型層的玻 璃上便形成一可用於製造軟性電子元件之基板結構,再以 此結構進行軟性電子元件的所有製程後,可以輕易以切割 方式沿離型層兩端或其内侧劃斷部分基板與離型層,便可 將軟性電子元件於玻璃上分離。 【實施例1】 聚亞醯胺 B1317-BAPPm (BB)/Topas (X=50, Y=50)/玻 201109355 璃基板結構之製作 首先,製備不同固含量(1%、3%、6%、7%、8%)的Topas 溶液。之後,塗佈上述Topas溶液於不同玻璃支樓載體, 以形成濕Topas膜。濕Topas膜的厚度分別為30μιη、60μιη、 90μιη、120μιη。待以50〇C烘烤5分鐘及300°C烘烤1小時 後,塗佈一聚亞醯胺基板材料(含1%助黏劑)於Topas膜。 再次烘烤後,進行離型測試,結果如表一所示。 表一ring). B may include □, 201109355 σΌ, or V ν, and Χ and γ may be hydrogen, fluorenyl, trifluoromethyl, hydroxy, -〇R (R may be an alkyl group having 1 to 18 carbon atoms), bromine, chlorine or Iodine, Z can be -0-, -CH2-, -C(CH3)2-, -S02-, -Ar-0-Ar-, -Ar-CH2-Ar-, -Ar_C(CH3)2-Ar- Or -Ar-S〇2-Ar- (Ar can be a benzene ring). η can be an integer greater than one. Further, a siloxane compound or cerium oxide may be added to the flexible substrate 16 to increase the adhesion of the flexible substrate 16 to the support carrier 12. The cyclic olefin copolymer release layer material of the present invention is coated on a support carrier (e.g., a glass substrate) to form one or more blocks. Thereafter, a soft base material is applied to the release layer and the support carrier to form a two-layer substrate structure suitable for separation of the flexible substrate. The second to second embodiments illustrate an embodiment of the present invention, and a method of manufacturing a substrate structure for a flexible electronic component. Referring to Figure 2, first, a support carrier 12 having a release layer 14 coated thereon is provided. The release layer 14 is applied to the support carrier 12 to form one or more blocks (as shown in Figure 1). The coated area is a first area Α1. The release layer 14 comprises a cyclic olefin copolymer having the above formula (I) or (II). The invention does not limit the size, shape and configuration of the release layer block. Next, referring to Fig. 2, a flexible substrate 16 is coated on the release layer 14 and the support carrier 12, for example, by coating. The flexible substrate 16 covers the area of the release layer 14 and the support carrier 12 to a second area Α2. It is worth noting that the second area Α2 is greater than the first area Α1 and the adhesion of the flexible substrate 16 to the support carrier 12 is greater than the adhesion of the release layer 14 to the support carrier 12. Next, referring to FIG. 2C, the two ends of the release layer 14 are cut off 201109355 points (c, c'), and the partial flexible substrate 16 and the support cut-type layer 14, the flexible substrate 16 and the support carrier 12 are cut off. As is the case, the separation provided by the present invention can be illustrated by the prior art. The substrate structure of the flexible electronic component utilizes the difference of the adhesion degree of the two kinds of applications, firstly, the release layer with poor adhesion is cut into the support carrier by 1 and the support, and then the support carrier is dense. A relatively small and small-area molded flexible display substrate) is covered with a relatively large area on a relatively dense two-type layer (for example, and is in contact with the branch #_. The base layer produced in this way is protected from the TFT). The process will not be removed, and in the completion of the system ^ 确 : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : The degree is better than that of a flexible display substrate) and remains intact. , the type of the layer (examples of the embodiment of the present invention is to first use the glass for the TFT 5cm I5cm) to make the release layer, in which the hollow sheet can be used to control the area of the release layer (such as 8cm) *8cm), and then molding the substrate material over the release layer area (such as l〇cm*l〇cm) on the glass containing the release layer to form a substrate structure for manufacturing flexible electronic components, and then using this structure After all the processes of the flexible electronic component are performed, the partial substrate and the release layer can be easily cut along both ends of the release layer or the inside thereof, and the flexible electronic component can be separated on the glass. [Example 1] Polyimide B1317-BAPPm (BB)/Topas (X=50, Y=50)/glass 201109355 Production of glass substrate structure First, different solid contents (1%, 3%, 6%, 7%, 8%) of Topas solution. Thereafter, the above Topas solution was applied to different glass support supports to form a wet Topas film. The thickness of the wet Topas film was 30 μm, 60 μm, 90 μm, and 120 μm, respectively. After baking at 50 ° C for 5 minutes and baking at 300 ° C for 1 hour, a polyimide substrate material (containing 1% adhesion promoter) was applied to the Topas film. After baking again, the release test was carried out, and the results are shown in Table 1. Table I

Topas固含量 是否完全溶解 對玻璃支撐載 體之密著度 聚亞醯胺基板 之離型情況 1% Yes 0B 完整取下, 無破損 3% Yes 0B 完整取下, 無破損 6% Yes 0B 完整取下, 無破損 7% Yes 0B 完整取下, 無破才貝 8% No, 形成膠體 - 【實施例2】 聚亞醯胺 B1317-BAPPm (BB)/Arton (χ=5〇,Y=50, 201109355 R=H)/玻璃基板結構之製作 首先,製備不同固含量(5%、10%、15%、20%、25%) 的Arton溶液。之後’塗佈上述Arton溶液於不同玻璃支 撐載體’以形成濕Arton膜。濕Arton膜的厚度分別為Topas solid content is completely dissolved. The adhesion of the glass support carrier is 1% of the release of the polyimide substrate. Yes 0B Completely removed, no damage 3% Yes 0B Completely removed, no damage 6% Yes 0B Completely removed , No breakage 7% Yes 0B Completely taken, No broken 8% No, Forming colloid - [Example 2] Polybendamine B1317-BAPPm (BB)/Arton (χ=5〇, Y=50, 201109355 R=H)/Production of Glass Substrate Structure First, Arton solutions of different solid contents (5%, 10%, 15%, 20%, 25%) were prepared. The above Arton solution was then coated onto a different glass support carrier to form a wet Arton film. The thickness of the wet Arton film is

30μιη、60μπι、90μιη、120μιη。待以 50〇C 烘烤 5 分鐘及 300〇C 烘烤1小時後’塗佈一聚亞醯胺基板材料(含1%助黏劑)於 Arton膜。再次烘烤後,進行離型測試,結果如表二所示。 表二30 μm, 60 μm, 90 μm, 120 μm. After baking at 50 ° C for 5 minutes and 300 ° C for 1 hour, a polyimide substrate material (containing 1% adhesion promoter) was applied to the Arton film. After baking again, the release test was carried out, and the results are shown in Table 2. Table II

Arton固含量 是否完全溶解 -—----- 對玻璃支撐载 體之密著唐 聚亞醯胺基板 之離型情況 5% Yes 0B 完整取下, 無破損 10% Yes 〜---- 0B 完整取下, 無破損 15% Yes '' 0B 完整取下, 無破損 20% Yes 0B 完整取下, 無破損 25% No, 形成膠體 L_ 【實施例3】 聚對二甲苯(parylene)離型層之製作 201109355 將聚對二甲苯之前趨物(parylene dimer)放入熱蒸鑛設 備中,並將預先洗淨的玻璃(15cm* 15cm)放入樣品室,利用 中空(8cm*8cm)的墊片覆蓋於玻璃上,抽真空後加熱至 150°C使聚對二曱苯之前驅物汽化,再加熱至650°C,使其 裂解便打開筏門使其通往樣品室,於室溫下聚合沈積於沒 有被墊片覆蓋的玻璃區域,形成一 8cm* 8cm的離型膜。 【實施例4】Is the solid content of Arton completely dissolved------- The release of the dense polyimide substrate of the glass support carrier is 5% Yes 0B Completely removed, no damage 10% Yes ~---- 0B Complete Next, no damage 15% Yes '' 0B Completely removed, no damage 20% Yes 0B Completely removed, no damage 25% No, forming colloid L_ [Example 3] Preparation of parylene release layer 201109355 Put the parylene dimer into the hot-steaming equipment, and put the pre-washed glass (15cm*15cm) into the sample chamber, covering it with a hollow (8cm*8cm) gasket. On the glass, after vacuuming, heat to 150 ° C to vaporize the polyethylene terephthalate precursor, then heat to 650 ° C, lyse it, open the door to the sample chamber, and polymerize and deposit at room temperature. The glass area not covered by the spacer forms an 8 cm*8 cm release film. [Embodiment 4]

Arton、Topas、Zeonor離型層之製作 將Arton、Topas、Zeonor分別以固含量10%溶於曱苯 中,以刮刀方式塗佈於玻璃上,放入烘箱於80°C及150°C 下各烘烤0.5小時,以形成一 8cm*8cm的離型膜。 【實施例5】 聚亞醯胺B1317-BAPPm (BB)/parylene/玻璃基板結構 之製作 ~Ο'°ΌΉΟ~0Ό·{Χίΐ^Ν- 0 0 首先,在室溫下,使用三頸瓶通以氮氣,將0.0147莫 耳的BAPPm二苯胺溶入32.94克的曱紛(cresol)溶劑中。待 BAPPm完全溶解後,將0_015莫耳的B1317雙酸酐加入, 直至B1317完全溶解,續攪拌1小時,以形成黏稠狀聚醯 201109355 胺酸溶液。之後’加熱至攝氏220度,進行3小時的亞醯 胺化反應,反應過程中同時使用除水裝置將水排除。最後, 將反應液滴入曱醇中使聚亞醯胺沉殿,於真空烘箱中烘乾 12小時。烘乾後,將聚亞醯胺以固含量20%溶解於DMAc 中,形成聚亞醯胺溶液。再將聚亞醯胺溶液以刮刀方式以 面積10cm*10cm塗佈於鍍有8cm*8cm聚對二曱苯(paryiene) 的玻璃上’並放入烘箱於80°C及150°C下各烘烤1小時, 即可獲得包含聚亞醯胺(BB)的基板結構。 【實施例6】 二氧化矽/聚亞醯胺 B1317-BAPPm (Si〇2/BB37)/parylene/玻璃基板結構之製作 首先,在室溫下,將3克以固含量20%溶於DMAc的 二氧化矽(Si〇2)與7克以固含量20%溶於DMAc的 B1317-BAPPm (BB)放入樣品瓶中。接著,加入〇·3克的含 胺基矽氧烷,於室溫下攪拌30分鐘。之後,以刮刀方式塗 佈於鍍有聚對二曱苯(parylene)的玻璃上,並放入烘箱於 80°C及150°C下各烘烤1小時’即可獲得包含二氧化矽/ 聚亞酿胺B1317-BAPPm (Si02/BB37)的基板結構。 【實施例7】 二氧化矽/聚亞醯胺 B1317-BAPPm (Si〇2/BB55)/parylene/玻璃基板結構之製作 首先’在室溫下’將5克以固含量20%溶於DMAc的 二氧化矽(Si02)與5克以固含量20%溶於DMAc的 201109355 B1317-BAPPm (BB)放入樣品瓶中。接著,加入〇 2克的含 胺基石夕氧烧,於室溫下擾拌3 0分鐘。之後,以刮刀方式塗 佈於鍍有聚對二曱苯(parylene)的玻璃上,並放入烘箱於 80°C及150°C下各烘烤1小時,即可獲得包含二氧化石夕/ 聚亞醯胺B1317-BAPPm (Si02/BB55)的基板結構。 【實施例8】 二氧化發/聚亞醯胺 B1317-BAPPm (Si02/BB73)/parylene/玻璃基板結構之製作 首先’在室溫下’將7克以固含量20%溶於DMAc的 二氧化矽(SiOJ與3克以固含量20%溶於DMAc的 B1317-BAPPm (BB)放入樣品瓶中。接著,加入0.12克的 含胺基矽氧烷,於室溫下攪拌30分鐘。之後,以刮刀方式 塗佈於鑛有聚對二曱苯(parylene)的玻璃上,並放入烘箱於 80°C及150°C下各烘烤1小時,即可獲得包含二氧化矽/ 聚亞醯胺B1317-BAPPm (Si02/BB73)的基板結構。 【實施例9】 四乙氧基矽烷/聚亞醯胺 B1317-BAPPm (TEOS/BB)/Topas/玻璃基板結構之製作 首先,在室溫下,將0.2克的四乙氧基矽烷 (tetraethoxysilane,TEOS)與 10 克以固含量 20%溶於 DMAc 的B1317-BAPPm (BB)放入樣品瓶中。接著,以刮刀方式 塗佈於塗有Topas的玻璃上,並放入烘箱於80°C及150°C 下各烘烤1小時,即可獲得包含四乙氧基矽烷/聚亞醯胺 201109355 B1317-BAPPm (TEOS/ΒΒ)的基板結構。 【實施例10】 胺基矽烷/聚亞醢胺 B1317-BAPPm (amino silane/BB)/Zeonor/玻璃基板結構之製作 首先,在室溫下,將0.2克的胺基石夕烧(amino silane) 與10克以固含量20%溶於DMAc的B1317-BAPPm (BB) 放入樣品瓶中。接著,以刮刀方式塗佈於塗有Zeonor的玻 璃上,並放入烘箱於80°C及150°C下各烘烤1小時,即可 獲得包含胺基矽烷/聚亞醯胺B1317-BAPPm (amino silane/BB)的基板結構。 【實施例11】 3-(甲基丙醯氧)丙基三曱氧基矽烷/聚亞醯胺 B1317-BAPPm (MPMS/BB)/Arton/玻璃基板結構之製作 首先,在室溫下,將0.2克的3-(曱基丙醯氧)丙基三曱 氧基石夕烧(3-(methacryloxy) propyl trimethoxy silane, MPMS) 與10克以固含量20%溶於DMAc的B1317-BAPPm (BB) 放入樣品瓶中。接著,以刮刀方式塗佈於塗有Arton的玻 璃上,並放入烘箱於80°C及150°C下各烘烤1小時,即可 獲得包含3-(曱基丙醯氧)丙基三曱氧基矽烷/聚亞醯胺 B1317-BAPPm (MPMS/BB)的基板結構。 在完成基板結構之後,只要將電子元件製作於含有離 型層的範圍内,待整個元件完成後,於離型層的邊界或内 側將部分基板與離型層切斷,便可輕易將基板及電子元件 18 201109355 與玻璃分離。 表三、表四為本發明離型層與軟性基板對支撐載體之 密著度。 表三 材料 密著度(B) Parylene (實施例 3) 0 Topas (實施例4) 0 Zeonor (實施例4) 0 Arton (實施例4) 0 聚亞醯胺(實施例5) 1 聚亞醯胺+二氧化矽(實施例6〜8) 2〜5 聚亞醯胺+TEOS (實施例9) 5 聚亞醯胺+胺基矽烷(實施例10) 5 聚亞醯胺+MPMS(實施例11) 5 表四 二氧化矽含量(%) 密著度(B) 0 (實施例5) 1 30 (實施例6) 5 50 (實施例7) 3 70 (實施例8) 2 雖然本發明已以較佳實施例揭露如上,然其並非用以 19 201109355 限定本發明,任何熟習此項技藝者,在不脫離本發明之精 神和範圍内,當可作更動與潤飾,因此本發明之保護範圍 當視後附之申請專利範圍所界定者為準。 20 201109355 【圖式簡單說明】 第1圖係根據本發明之一實施例,一種應用於軟性電 子元件基板結構之剖面示意圖。 第1A圖係根據本發明之一實施例,一種應用於軟性 電子元件基板結構之上視圖。 第2A〜2D圖係為本發明之一實施例,一種應用於軟性 電子元件基板結構製造方法之剖面示意圖。 【主要元件符號說明】 10〜基板結構; 12〜支撐載體; 14〜離型層; 16〜軟性基板;Arton, Topas, Zeonor release layer production, Arton, Topas, Zeonor were dissolved in benzene in a solid content of 10%, coated on glass by doctor blade, placed in an oven at 80 ° C and 150 ° C Baking was carried out for 0.5 hours to form a release film of 8 cm * 8 cm. [Example 5] Preparation of polybendamine B1317-BAPPm (BB)/parylene/glass substrate structure ~Ο'°ΌΉΟ~0Ό·{Χίΐ^Ν- 0 0 First, at room temperature, using a three-necked bottle 0.0147 moles of BAPPm diphenylamine was dissolved in 32.94 grams of cresol solvent under nitrogen. After BAPPm was completely dissolved, 0_015 mol of B1317 dianhydride was added until B1317 was completely dissolved, and stirring was continued for 1 hour to form a viscous polyfluorene 201109355 amine acid solution. Thereafter, the mixture was heated to 220 ° C for 3 hours of the amidoximation reaction, and the water was removed simultaneously using a water removal device during the reaction. Finally, the reaction was dropped into decyl alcohol to immerse the polyamine, and dried in a vacuum oven for 12 hours. After drying, the polymethyleneamine was dissolved in DMAc at a solid content of 20% to form a polymethyleneamine solution. Then, the polyamidamine solution was coated on a glass plated with 8 cm*8 cm of paryiene by a doctor blade method in an area of 10 cm*10 cm and placed in an oven at 80 ° C and 150 ° C for drying. After baking for 1 hour, a substrate structure containing polyamine (BB) can be obtained. [Example 6] Preparation of cerium oxide/polyiminamide B1317-BAPPm (Si〇2/BB37)/parylene/glass substrate structure First, 3 g of a solid content of 20% was dissolved in DMAc at room temperature. Ceria (Si〇2) and 7 g of B1317-BAPPm (BB) dissolved in DMAc at a solid content of 20% were placed in a sample vial. Next, 3 g of an amine-containing oxirane was added and stirred at room temperature for 30 minutes. Thereafter, it is applied to a glass plated with parylene by a doctor blade, and baked in an oven at 80 ° C and 150 ° C for 1 hour to obtain a cerium oxide/polymer. Substrate structure of arsenamide B1317-BAPPm (Si02/BB37). [Example 7] Preparation of cerium oxide/polyiminamide B1317-BAPPm (Si〇2/BB55)/parylene/glass substrate structure First, 5 g of a solid content of 20% was dissolved in DMAc at room temperature. Cerium oxide (SiO 2 ) was placed in a sample vial with 5 g of 201109355 B1317-BAPPm (BB) dissolved in DMAc at a solid content of 20%. Next, 2 g of an amine-containing azepine was added and the mixture was stirred at room temperature for 30 minutes. Thereafter, it is applied to a glass plated with parylene by a doctor blade, and baked in an oven at 80 ° C and 150 ° C for 1 hour to obtain a silica dioxide containing day. Substrate structure of polybendamine B1317-BAPPm (Si02/BB55). [Example 8] Preparation of oxidized hair/polyimide amine B1317-BAPPm (Si02/BB73)/parylene/glass substrate structure First, 7 g of a solid content of 20% solid solution was dissolved in DMAc at room temperature.矽 (SiOJ and 3 g of B1317-BAPPm (BB) dissolved in DMAc at a solid content of 20% were placed in a sample vial. Then, 0.12 g of an amine-containing oxirane was added and stirred at room temperature for 30 minutes. Thereafter, It is coated on a glass of parylene with a doctor blade and baked in an oven at 80 ° C and 150 ° C for 1 hour to obtain cerium oxide/polyarylene. Substrate structure of amine B1317-BAPPm (Si02/BB73) [Example 9] Preparation of tetraethoxy decane/polyiminamide B1317-BAPPm (TEOS/BB)/Topas/glass substrate structure First, at room temperature 0.2 g of tetraethoxysilane (TEOS) and 10 g of B1317-BAPPm (BB) dissolved in DMAc at a solid content of 20% were placed in a sample vial. Then, it was applied by a spatula to Topas On the glass, and baked in an oven at 80 ° C and 150 ° C for 1 hour, you can get tetraethoxy decane / polyamido 201109355 B1317-BA The substrate structure of PPm (TEOS/ΒΒ). [Example 10] Preparation of amino decane/polyimide B1317-BAPPm (amino silane/BB)/Zeonor/glass substrate structure First, at room temperature, 0.2 g The amino silane is placed in a vial with 10 g of B1317-BAPPm (BB) dissolved in DMAc at a solid content of 20%. Then, it is applied to the Zeonor-coated glass by a doctor blade and placed. After baking in an oven at 80 ° C and 150 ° C for 1 hour, a substrate structure containing amino decane/polyimide B1317-BAPPm (amino silane/BB) can be obtained. [Example 11] 3-( Preparation of methacryloxy)propyltrimethoxy decane/polyamidoamine B1317-BAPPm (MPMS/BB)/Arton/glass substrate structure First, at room temperature, 0.2 g of 3-(fluorenyl) 3-(methacryloxy) propyl trimethoxy silane (MPMS) was placed in a vial with 10 g of B1317-BAPPm (BB) dissolved in DMAc at a solid content of 20%. It is coated on Arton-coated glass by a doctor blade, and baked in an oven at 80 ° C and 150 ° C for 1 hour to obtain 3-(mercaptopropoxy)propyltriazine. Yl Silane / polyalkylene Amides B1317-BAPPm (MPMS / BB) of the substrate structure. After the substrate structure is completed, as long as the electronic component is fabricated in the range containing the release layer, after the entire component is completed, a part of the substrate and the release layer are cut off at the boundary or inside of the release layer, and the substrate and the substrate can be easily Electronic component 18 201109355 is separated from the glass. Table 3 and Table 4 show the adhesion of the release layer and the flexible substrate to the support carrier of the present invention. Table 3 Material Adhesion (B) Parylene (Example 3) 0 Topas (Example 4) 0 Zeonor (Example 4) 0 Arton (Example 4) 0 Polyiminide (Example 5) 1 Polyaluminium Amine + cerium oxide (Examples 6 to 8) 2 to 5 Polyimide + TEOS (Example 9) 5 Polyiminide + Aminodecane (Example 10) 5 Polyiminide + MPMS (Example 11) 5 Table IV cerium oxide content (%) Tightness (B) 0 (Example 5) 1 30 (Example 6) 5 50 (Example 7) 3 70 (Example 8) 2 Although the present invention has The present invention is disclosed in the above preferred embodiments, but it is not intended to limit the present invention to 19 201109355. Any person skilled in the art can change and refine the present invention without departing from the spirit and scope of the present invention. This is subject to the definition of the scope of the patent application. 20 201109355 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a structure of a substrate for a flexible electronic component according to an embodiment of the present invention. Fig. 1A is a top view of a substrate structure applied to a flexible electronic component according to an embodiment of the present invention. 2A to 2D are diagrams showing a cross-sectional view of a method of manufacturing a flexible electronic component substrate structure according to an embodiment of the present invention. [Main component symbol description] 10~substrate structure; 12~ support carrier; 14~release layer; 16~soft substrate;

Al、A2〜覆蓋面積; C、C’〜切除點。 21Al, A2 ~ coverage area; C, C' ~ cut-off point. twenty one

Claims (1)

201109355 七、申請專利範圍: 1. 一種應用於軟性電子元件之環烯共聚物離型層材 料,具有下列化學式⑴或(II):201109355 VII. Patent application scope: 1. A cyclic olefin copolymer release layer material for soft electronic components, having the following chemical formula (1) or (II): 其中X為30〜70,X+Y為100, R為氫、曱基或乙基。 2. 如申請專利範圍第1項所述之應用於軟性電子元 件之環烯共聚物離型層材料,其中該離型層材料溶於有機 溶劑。 3. —種應用於軟性電子元件之基板結構,包括: 一支撐載體; 一離型層,以一第一面積覆蓋該支#載體,形成一或 複數個區塊,其中該離型層包括環烯共聚物,具有下列化 學式(I)或(II): 22 201109355Wherein X is from 30 to 70, X + Y is 100, and R is hydrogen, decyl or ethyl. 2. The cyclic olefin copolymer release layer material for use in a soft electronic component according to claim 1, wherein the release layer material is soluble in an organic solvent. 3. A substrate structure for a flexible electronic component, comprising: a support carrier; a release layer covering the support #carrier with a first area to form one or more blocks, wherein the release layer comprises a ring An olefin copolymer having the following chemical formula (I) or (II): 22 201109355 (ιι) 其中X為30〜70,Χ+Υ為100, R為氫、曱基或乙基; 以及 一軟性基板,以一第二面積覆蓋該離型層與該支撐載 體,其中該第二面積大於該第一面積且該軟性基板對該支 撐載體之密著度大於該離型層對該支撐載體之密著度。 4. 如申請專利範圍第3項所述之應用於軟性電子元 件之基板結構,其中該支撐載體包括玻璃或矽晶圓。 5. 如申請專利範圍第3項所述之應用於軟性電子元 件之基板結構,其中該離型層對該支撐載體之密著度介於 0B〜1B 〇 6. 如申請專利範圍第3項所述之應用於軟性電子元 件之基板結構,其中該離型層之固含量介於1〜20%。 7. 如申請專利範圍第3項所述之應用於軟性電子元 件之基板結構,其中該離型層之厚度介於0.2〜20微米。 23 201109355 8. 如申請專利範圍第3項所述之應用於軟性電子元 件之基板結構,其中該離型層之厚度介於0_5〜5微米。 9. 如申請專利範圍第3項所述之應用於軟性電子元 件之基板結構,其中該軟性基板對該支撐載體之密著度介 於1〜5B 〇 10·如申請專利範圍第3項所述之應用於軟性電子元 件之基板結構,其中該軟性基板包括聚亞醯胺(polyimide, PI)、聚碳酸酯(polycarbonate, PC)、聚酸楓(polyethersulfone, PES)、聚丙稀酸酯(polyacrylate,PA)、聚原冰稀 (polynorbornene,PNB)、聚乙稀對苯二曱酸酯(polyethylene terephthalate, PET)、聚醚 _ 酮(polyetheretherketone, PEEK)、聚萘二甲酸乙二醇酯(polyethylene naphthalate, PEN)或聚鱗亞醯胺(polyetherimide, PEI) 0 11.如申請專利範圍第10項所述之應用於軟性電子元 件之基板結構,其中該聚亞醯胺具有下列化學式(III):(ιι) wherein X is 30 to 70, Χ+Υ is 100, R is hydrogen, fluorenyl or ethyl; and a flexible substrate covering the release layer and the support carrier with a second area, wherein the second The area is larger than the first area and the adhesion of the flexible substrate to the support carrier is greater than the adhesion of the release layer to the support carrier. 4. The substrate structure for a flexible electronic component according to claim 3, wherein the support carrier comprises a glass or germanium wafer. 5. The substrate structure applied to the flexible electronic component according to claim 3, wherein the release layer has a density of 0B to 1B 〇6 to the support carrier. The substrate structure is applied to a flexible electronic component, wherein the release layer has a solid content of 1 to 20%. 7. The substrate structure for a flexible electronic component according to claim 3, wherein the release layer has a thickness of 0.2 to 20 μm. The method of claim 3, wherein the thickness of the release layer is between 0 and 5 micrometers. 9. The substrate structure for a flexible electronic component according to claim 3, wherein the flexible substrate has a adhesion to the support carrier of 1 to 5 B 〇 10 as described in claim 3 The substrate structure is applied to a flexible electronic device, wherein the flexible substrate comprises polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polyacrylate (polyacrylate). PA), polynorbornene (PNB), polyethylene terephthalate (PET), polyetheretherketone (PEEK), polyethylene naphthalate , PEN) or polyetherimide (PEI) 0. The substrate structure for soft electronic components according to claim 10, wherein the polyamidomine has the following chemical formula (III): 24 20110935524 201109355 或,其中χ與Y為氫、曱基、三氟曱基、 羥基、-OR(R為碳數1〜18之烷基)、溴、氯或碘,Ζ為-0-、 -CH〗·、-C(CH3)2_、-S〇2_、-Ar-0-Ar_、-Ar-CH^-Ar-、 -Ar-C(CH3)2-Ar-或-Ar-S02-Ar- (Ar 為苯環);Or wherein Y and Y are hydrogen, fluorenyl, trifluoromethyl, hydroxy, -OR (R is an alkyl group having 1 to 18 carbon atoms), bromine, chlorine or iodine, and Ζ is -0-, -CH. , -C(CH3)2_, -S〇2_, -Ar-0-Ar_, -Ar-CH^-Ar-, -Ar-C(CH3)2-Ar- or -Ar-S02-Ar- (Ar Is a benzene ring); β包括LI]、β includes LI], ,其中X與Y為氫、曱基、三氟曱基、羥基、 -OR(R為碳數1〜18之烷基)、溴、氯或碘,Ζ為-0-、-CH2-、 -C(CH3)2_、_S〇2_、_Ar-0-Ar-、-Ar-CH2_Ar-、-Ar-C(CH3)2_Ar-或-Ar-S02-Ar- (Ar為苯環);以及 n為大於1之整數。 12. 如申請專利範圍第10項所述之應用於軟性電子元 件之基板結構,其中該軟性基板更包括一矽氧烷化合物。 13. 如申請專利範圍第12項所述之應用於軟性電子元 件之基板結構,其中該軟性基板更包括氧化矽。 14. 一種應用於軟性電子元件之基板結構之製造方 法,包括: 提供一支撐載體; 以一第一面積覆蓋一離型層於該支撐載體上,形成一 或複數個區塊,其中該離型層包括環烯共聚物,具有下列 化學式(I)或(II): 25 (i) (i)201109355Wherein X and Y are hydrogen, fluorenyl, trifluoromethyl, hydroxy, -OR (R is an alkyl group having 1 to 18 carbon atoms), bromine, chlorine or iodine, and hydrazine is -0-, -CH2-, - C(CH3)2_, _S〇2_, _Ar-0-Ar-, -Ar-CH2_Ar-, -Ar-C(CH3)2_Ar- or -Ar-S02-Ar- (Ar is a benzene ring); and n is An integer greater than one. 12. The substrate structure for a flexible electronic component according to claim 10, wherein the flexible substrate further comprises a siloxane compound. 13. The substrate structure for a flexible electronic component according to claim 12, wherein the flexible substrate further comprises ruthenium oxide. 14. A method of fabricating a substrate structure for a flexible electronic component, comprising: providing a support carrier; covering a release layer on the support carrier with a first area to form one or more blocks, wherein the release type The layer comprises a cyclic olefin copolymer having the following chemical formula (I) or (II): 25 (i) (i) 201109355 其中X為30〜70,X+Y為100, R為氫、曱基或乙基; 以及 以一第二面積覆蓋一軟性基板於該離型層與該支撐載 體上,其中該第二面積大於該第一面積且該軟性基板對該 支撐載體之密著度大於該離型層對該支撐載體之密著度。 15. 如申請專利範圍第14項所述之應用於軟性電子元 件之基板結構之製造方法,其中該軟性基板以塗佈方式覆 蓋於該離型層與該支撐載體上。 16. 如申請專利範圍第14項所述之應用於軟性電子元 件之基板結構之製造方法,更包括以該離型層之兩端點或 其内側為切除點,切除部分該軟性基板與該支撐載體,以 分離該離型層、該軟性基板與該支撐載體。 26Wherein X is 30 to 70, X+Y is 100, R is hydrogen, sulfhydryl or ethyl; and a soft substrate is coated on the release layer and the support carrier by a second area, wherein the second area is greater than The first area and the adhesion of the flexible substrate to the support carrier is greater than the adhesion of the release layer to the support carrier. 15. The method of fabricating a substrate structure for a flexible electronic component according to claim 14, wherein the flexible substrate is coated on the release layer and the support carrier. 16. The method for manufacturing a substrate structure for a flexible electronic component according to claim 14, further comprising cutting a portion of the flexible substrate and the support by using a point of the two ends of the release layer or an inner side thereof as a cut-off point. a carrier to separate the release layer, the flexible substrate, and the support carrier. 26
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI578015B (en) * 2011-12-23 2017-04-11 財團法人工業技術研究院 Flexible substrate and manufacturing method thereof and manufacturing method of package of environmental sensitive electronic element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI578015B (en) * 2011-12-23 2017-04-11 財團法人工業技術研究院 Flexible substrate and manufacturing method thereof and manufacturing method of package of environmental sensitive electronic element

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