TW201100511A - Adhesive agent composition, adhesive sheet, die cutting-die attach film and semiconductor device - Google Patents

Abstract

The issue of this invention is to provide an adhesive agent composition that does not only have excellent adhesiveness, but also has excellent embedding performance and capable of providing high reliability for semiconductor devices while producing the semiconductor devices; and to provide an adhesive sheet using the adhesive agent composition, a die cutting-die attach film using the adhesive agent composition and having excellent feature stability and picking up stability, and a semiconductor device obtained by using the adhesive sheet or the die cutting-die attach film. The solution according to the present invention is an adhesive agent composition containing: (A) a (metha)acrylic acid resin having epoxy groups and a structural unit derived from acrylonitrile and having a weight average molecular weight of 50,000 to 1,500,000, (B) an epoxy resin having a skeleton structure of dicyclopentadiene, and (C) an aromatic polyamine having a skeleton structure of diphenylsulfone.

Description

201100511 VI. Description of the Invention: [Technical Field] The present invention relates to a (meth)acrylic resin and an epoxy resin and an aromatic polyamine, which can reduce the occurrence of voids when a semiconductor wafer is attached to a substrate. a subsequent composition, a subsequent sheet using the adhesive composition, a dicing die-bonding film, and a semiconductor device obtained by using the bonding sheet or the dicing film. The prior art semiconductor device, for example (i) by cutting a large-diameter wafer having a 1C line into a semiconductor wafer in the cutting (cutting) step, (ii) by using a hardening liquid adhesive as a solid crystal material, etc. The wafer is thermocompression-bonded to the lead frame, and the adhesive is cured to fix (mount) the wafer, (iii) after wire bonding between the electrodes, and (iv) sealing is performed to improve handleability and protect the external environment. As a form of sealing, the resin Q-transfer molding method is most commonly used because of its excellent mass productivity and low cost. In recent years, with the high functionality of semiconductor devices, it has been used for semi-conductivity. In the case where a liquid adhesive is used as the above-mentioned solid crystal material, the support substrate (substrate) to be mounted on the wafer is required to be denser and finer. When the semiconductor wafer is mounted, the adhesive oozes from the wafer end. However, contamination of the electrode is liable to occur, and the thickness of the adhesive layer is uneven, which causes the wafer to be tilted, which is liable to cause wire bonding. Therefore, in order to improve these disadvantages, it is desirable to thin the adhesive. The convex portion of the concave surface is caused by the wiring element such as wiring on the substrate. When the semiconductor wafer is thermally pressed on such a substrate, the adhesive film as the solid crystal material, that is, the solid crystal film cannot completely bury the concave portion. Then, the unburied portion is left as a hole residue, which expands in the heating of the soldering furnace, and damages the adhesive layer to impair the reliability of the semiconductor device. In particular, in recent years, the high temperature corresponding to the lead-free solder (265) In t), the resistance to soldering is required, and the importance of preventing the formation of voids is increased. Hereinafter, the performance of the recesses on the substrate will be buried without leaving holes. It is called “buried performance.” In order to solve the above problem, it is considered to thermally press-bond a semiconductor wafer with a solid crystal film having a low melt viscosity by inserting a molten solid crystal film into a buried portion in a recess existing on the substrate. On the substrate, try not to form a hole. However, in this method, it is impossible to form a hole at all, and it takes a long time, a local pressure, or both, to cause adverse effects on productivity. There is also a case where the solid crystal film is largely oozing from the wafer end and contaminating the electrode. As another method for solving the above problem, since the molding of the sealing resin is performed under high temperature and high pressure, there is a resin sealing step. The residual pores are heated and compressed to reduce the volume of the pores so as to more absorb the solid crystal film in the solid crystal film or to heat-harden the solid crystal film as it is to remove the pores. This method does not require special steps and is advantageous in terms of manufacturing. Further, conventionally, as the above-mentioned adhesive for solid crystal, a low-elastic modulus material in which an acrylic resin containing an excellent resin having an adhesive property, an epoxy resin, a phenol resin of a curing agent, and a catalyst has been developed has been developed ( For example, Patent Documents 1 to 3). However, although these adhesives are excellent in adhesion, the subsequent film-based hardening reaction using the adhesive is fast as in -6-201100511, and if the above method for removing the holes in the resin sealing step is employed, the resin is sealed. The heating of the wire bonding step before the step increases the rate of increase in the melt viscosity of the film. Therefore, it is difficult to remove the hole in the resin sealing step. That is, the melt viscosity becomes large, and as a result, the volume of the pores cannot be sufficiently reduced, and the pores cannot be absorbed in the resin. Therefore, in the conventional adhesive, it is difficult to sufficiently bury the recessed portion on the substrate, and improvement in embedding performance is required. Q The adhesive film layer of the dicing film is laminated with a film formed by an epoxy-containing adhesive. The viscous film depends on one or both of the hardeners of the epoxy resin and the epoxy resin. Optionally, such components in the subsequent film are transferred over time to the dicing film. In this way, the characteristics (adhesiveness, embedding property) of the film are changed from time to time after the production of the dicing/mud film, and the semiconductor obtained by the semiconductor device is stored after long-term storage of the dicing film. The reliability of the device system is deteriorated, and it is difficult to ensure the preservation stability of the cut/adhesive film in the process of the semiconductor device. Further, the adhesive film formed of the epoxy resin-containing adhesive is taken from the epoxy resin, and the rate of increase in the melt viscosity and the elastic modulus are increased by the heating of the wire bonding step, so that the hole is removed in the resin sealing step. It becomes difficult. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei No. Hei No. Hei 1 1 - 1 2 545 [Patent Document 3] Special Opening 2 0 0 〇 - 1 OBJECT OF THE INVENTION PROBLEM TO BE SOLVED BY THE INVENTION The object of the present invention is to provide a semiconductor device which is excellent in not only good adhesion but also excellent in embedding performance, and which is used for manufacturing a semiconductor device. a composition for use, a sheet for subsequent use of the adhesive composition, a cut-and-bond film which is excellent in property stability and pick-up property, and a use of the sheet or the cut-and-stick film 0 The resulting semiconductor device. In order to solve the problem, the inventors of the present invention conducted various reviews on the adhesive composition containing the (meth)acrylic resin and the epoxy resin, and found that the following adhesive composition, followed by the sheet, and the cutting were The present invention has been accomplished by a die-bonding film and a semiconductor device to achieve the above object. That is, the first point of the present invention is to provide an adhesive composition comprising: (A) a weight average molecular weight of 5 Å, 〇〇〇1,50 Å,000, having an epoxy group and the following formula (1) The structural unit of the (meth)acrylic resin shown, I > N HCIC I 2 HC 4

Ethylene ring 2 has a structure of a B-tree oxy-ring. Bone olefin 8 and 201100511 (C) An aromatic polyamine having a diphenyl fluorene skeleton structure. A second aspect of the present invention is to provide a sheet which is provided with a substrate and a subsequent composition of the substrate which is provided on the substrate, and is further composed of the adhesive composition. The resulting adhesive layer 'retains the film shape at room temperature even in the state after peeling from the substrate' conforms to the so-called adhesive film. A third aspect of the present invention provides a dicing die-bonding film which has Q: a dicing film having a substrate and an adhesive layer provided thereon, and the above-mentioned adhesive agent provided on the adhesive layer of the dicing film An adhesive layer formed by the composition. A fourth aspect of the present invention provides a semiconductor device which is produced by using the above-described succeeding sheet or the above-mentioned dicing die-bonding film. Advantageous Effects of Invention The adhesive composition of the present invention can suppress the increase in the melt viscosity due to the heat of the wire bonding step, and has a melt viscosity which can sufficiently eliminate the voids in the resin sealing step, and can be easily and sufficiently removed. The hole is dropped, so it has excellent embedding performance. Further, the cured product obtained by heat-hardening the adhesive composition into a layer, that is, the cured adhesive layer, has a high adhesive force for various substrates, and has a low modulus of elasticity and excellent heat resistance. In addition, the dicing film of the present invention is excellent in property stability and pick-up stability even after long-term storage, and can be suitably used in a semiconductor device process for a long period of time. Therefore, the adhesive composition of the present invention and the subsequent use sheet and the cut/bonded crystal -9 - 201100511 film using the adhesive composition are suitable for manufacturing a highly reliable semiconductor device. [Embodiment] Mode for Carrying Out the Invention The present invention will be described in detail below. Further, in the present specification, "weight average molecular weight" means a weight average molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC). The adhesive composition of the present invention contains the above-mentioned (A) to (C) component. Since the shape is maintained at room temperature, for example, a film-like film can be formed, and on the other hand, it can be molded into a plastic state by heating, and then borrowed. This state is maintained for a long period of time to exhibit excellent embedding performance. The cured product of the composition has high adhesion to the substrate while having a low modulus of elasticity and excellent heat resistance. The dicing layer of the dicing film is laminated with a dicing/mulet film formed of the adhesive layer of the adhesive composition of the present invention, which can inhibit the transfer of the component from the adhesive layer to the dicing film even after long-term storage. Since the characteristic stability is excellent in pick-up stability, the stability characteristics can be maintained for a long period of time in the process of the semiconductor device. [Component of the adhesive composition] < (A) (meth)acrylic resin> (A) The weight average molecular weight of the component (A) is 50,000 to 1, 5 Å, 〇〇〇, having an epoxy group and Description (1): -10- 201100511 【化2】

CN (1) A structural unit of (meth)acrylic resin derived from acrylonitrile. The (meth)acrylic resin in the present specification means a product derived from an acrylic acid, an acrylic acid derivative, a methylpropionic acid, and a methylpropionic acid derivative.

a polymer of a structural unit derived from a (meth)acrylic monomer. The (A 0 ) component may be used alone or in combination of two or more. When two or more kinds are used in combination, the component (A) may be a mixture of a (meth)acrylic resin having an epoxy group and a (meth)acrylic resin having no epoxy group. The (A) component may, for example, be a homopolymer or a copolymer of the above (meth)acrylic monomer or a copolymer of the (meth)acrylic monomer and another monomer, and have a weight average molecular weight of 50,000. ～1,500,000, a polymer having an epoxy group and a structural unit of 75 of the above formula (1). In the copolymer of the (meth)acrylic monomer and the other monomer, the content of the structural unit derived from the other monomer is preferably 〇~5 0 mol in all structural units of the component (A). . /. More preferably 0 to 3 0 mol%. In the copolymer of the (meth)acrylic monomer and the other monomer, these monomers may be used singly or in combination of two or more. Examples of the acrylic acid derivative include alkyl acrylates such as methyl acrylate, ethyl acrylate, and butyl acrylate; acrylamides such as dimethyl acrylamide; and epoxy groups such as glycidyl acrylate. Acrylate; acrylonitrile. -11 - 201100511 As the methacrylic acid derivative, for example, alkyl methacrylate such as methyl methacrylate, ethyl methacrylate or butyl methacrylate; dimethyl methacrylamide; An epoxy group-containing methacrylate such as methacrylamide or glycidyl methacrylate. Examples of the other monomer include styrene, butadiene, and an allyl derivative (allyl alcohol, allyl acetate, and the like). The (A) component has an epoxy group based on the adhesion of the resulting adhesive cured layer. This epoxy group reacts with the components (B) and (C). The epoxy group can be synthesized, for example, by synthesizing the component (A) by using the epoxy group-containing monomer as a part of the monomer used in the raw material of the component (A), and introducing it into the component (A). Examples of the epoxy group-containing monomer include an epoxy group-containing acrylic acid derivative and an epoxy group-containing methacrylic acid derivative, and more specifically, an epoxy group-containing epoxy group such as glycidyl acrylate. An epoxy group-containing methacrylate such as acrylate or glycidyl methacrylate. The content of the epoxy group in the component (A) is preferably 0.002 to 0.1 mol per 100 g of the component (A), more preferably 0.005 to 〇.5 mol. When the content is in the range of 0.002 to 0.1 mol, a composition having sufficient embedding property and an adhesive hard layer having sufficient adhesion can be easily obtained. The structural unit represented by the above formula (1) can be introduced into the component (A) by, for example, synthesizing the component (a) by using acrylonitrile as a part of the monomer used as the raw material of the component (A). In the component (a), the content of the structural unit derived from acrylonitrile (the ratio of the acrylonitrile in all the monomers copolymerized) is preferably from 5 to 50% by mass, particularly preferably from 1 to 4% by mass. /〇. -12- 201100511 The weight average molecular weight of the component (A) is usually 50,000 to 1,500,000 (preferably 1 000,000 to 1,000,000). If the above molecular weight is less than 50,000, the adhesion and strength of the resulting cured layer of the adhesive are lowered. When the molecular weight exceeds 1,500,000, the resulting composition is too high in viscosity and the workability is deteriorated. Further, the glass transition point (Tg) of the (meth)acrylic resin of the component (A) measured by thermomechanical analysis (TMA) is preferably -4 〇 ° C to Q l 〇〇 t: more preferably -10 to 70 °C. <(B) Epoxy Resin> The component (B) is an epoxy resin having a dicyclopentadiene skeleton structure, and preferably has at least two epoxy groups in one molecule. The component (B) may be used alone or in combination of two or more. The "dicyclopentadiene skeleton structure" in the present specification means a structure represented by the following formula: [Chemical 3]

And the structure remaining after removing some or all of the hydrogen atoms from the configuration shown in the above formula. In the latter configuration, the number and position of the removed hydrogen atoms are not limited. Among them, it is preferable that the structure shown in the above formula is generally laminated on the adhesive layer of the dicing film with a-13-containing low molecular weight body (mainly a compound having two epoxy groups in one molecule). 201100511 Cutting of the adhesive layer formed by the adhesive composition of the epoxy resin containing a good content. The epoxy resin in the adhesive layer in the adhesive film is easily transferred into the dicing film. As a result, in the adhesive layer, the composition balance of the composition is collapsed. The crosslinking density of the resins is lowered, and the adhesion of the adhesive layer is gradually lowered. Further, the semiconductor device obtained by using the adhesive layer after long-term storage deteriorates reliability. Specifically, when an epoxy resin having a skeleton having a high crystallinity in a molecule such as a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a biphenyl type epoxy resin, or a naphthalene type epoxy resin is used, The above phenomenon is easy to occur. At this time, the low molecular weight body of the above epoxy resin is transferred from the adhesive layer to the dicing film. A dicing/mulet film formed of an adhesive layer composed of an adhesive composition containing the above-described epoxy resin having a high crystallinity in a molecule is laminated on the adhesive layer of the dicing film, from the viewpoint of manufacture. When the mixture is allowed to stand at 25 ° C and 50% RH for one month, the amount of the component transferred from the adhesive layer to the adhesive layer of the dicing film is an adhesive for the dicing film before standing. 30% by mass or more of all the components in the layer. Therefore, even if the above-mentioned adhesive layer is hardened after standing, the crosslinking density is lowered. Further, as the epoxy resin is transferred, the adhesion between the dicing film and the adhesive layer rises with time, and the removal (pickup) of the individual wafers becomes difficult, which is not preferable. On the other hand, as the epoxy resin, a dicyclopentadiene type epoxy resin, a cresol novolac type epoxy resin, a phenol novolak type epoxy resin, or a xyi〇k type epoxy resin is used. An epoxy resin having a skeleton having a low crystallinity such as a resin has the following advantages. That is, a cut/adhesive film formed of an adhesive layer composed of an adhesive containing such an epoxy resin is laminated on the adhesive layer of the dicing film, and is manufactured at 25 °C from the manufacture. When C and 50% RH are left for one month, the amount of the component transferred from the adhesive layer to the adhesive layer of the dicing film can suppress the cutting/adhesive film before the standing. Further, 30% by mass of all the components in the layer of the agent can suppress the decrease in the adhesion of the adhesive layer over time. Further, even if the adhesive layer after long-term storage is used, a semiconductor device having excellent reliability can be obtained. Therefore, the subsequent sheet formed of the adhesive composition of the epoxy resin having a dicyclopentadiene skeleton structure containing the component (B) is excellent in long-term stability, has high adhesion, and is used in the subsequent step. The semiconductor device obtained by using the sheet has excellent reliability. Therefore, the subsequent sheet can be applied to a cut/mulet film in the process of a semiconductor device. The component (B) is not particularly limited as long as it has a dicyclopentadiene skeleton structure. When the adhesive composition of the present invention is used as a subsequent sheet, especially when the adhered tantalum wafer is thin, in order to prevent the occurrence of cracks and warpage, in order to adhere to the lower temperature and lower pressure, Next, a sheet is used, and it is preferred that the component (B) is solid at room temperature, and the softening temperature measured by the ring and ball method (JIS-K 7 234) is not more than 10 °C. If the amount of the low molecular weight body present in the epoxy resin of the component (B) is too large, the obtained subsequent sheet is difficult to exhibit adhesiveness' and the obtained cut/bonded film is taken out after the dicing of the wafer. (Picking) is easy. As the component (B), an epoxy resin represented by the following structural formula (2) is preferably exemplified: -15-201100511 [Chemical 4]

CH—CH2 (where η is 0 or more). In the above structural formula (2), η is a number of 0 or more, preferably a number, more preferably a number of 〇~5. This epoxy resin is a compound having one molecule and two epoxy groups. The above-mentioned structural formula (2) may be used alone or in combination of two or more. The epoxy resin represented by the above structural formula (2) is used in the composition of the present invention, and the adhesive composition is used for cutting and sticking, and the amount of component migration from the adhesive layer to the dicing film is less changed, and the wire bonding step is performed. The heating also suppresses the increase in the elastic modulus of the adhesive layer more effectively, and the embedding performance is changed well. The amount of the component (Β) is preferably from 5 to 300 parts by mass, more preferably from 10 to 200, based on 100 parts by mass of i, and the amount of the compound is from 5 to 30,000 parts by mass. It is possible to have an adhesive composition having sufficient embedding performance, and the obtained interface layer is excellent in adhesion, and it is possible to suppress an increase in the elastic modulus and to allow sufficient flexibility. < (C) Aromatic Polyamine> The aromatic system having a diphenyl mill skeleton structure of the component (C) has a base maple skeleton structure and has a direct connection to the square-16- of 0 to 10 The epoxy resin invented the crystallized film even after passing through the melt viscosity: A) component parts by mass. It is easy to obtain a hardening agent. It is easy to be a compound with a polyamine and a fragrant ring. It has two amine groups in 201100511 and has a function as a hardener and a catalyst for epoxy resins. The aromatic polyamine of the component (C) has a benzene ring in the diphenyl fluorene skeleton structure, and may have other aromatic rings. When the aromatic ring in the component (C) is only a benzene ring in the diphenyl fluorene skeleton structure, at least two amine groups are directly bonded to the benzene ring, and the aromatic ring system is diphenyl fluorene in the component (C). When the benzene ring in the skeleton structure and the aromatic ring other than the benzene ring are directly bonded to either or both of the benzene ring and the aromatic ring other than the benzene ring. ¢) The aromatic polyamine of the component (C) has a melting point of more than 17 (TC) and is less reactive under heating in the in-line bonding step. Therefore, in the composition containing the component (C), the curing reaction is slowly Therefore, in the composition, the increase in the melt viscosity due to heat curing can be effectively suppressed. Further, the cured product obtained by heat-hardening the composition of the aromatic polyamine containing the component (C) is heat resistance. Therefore, the composition of the present invention containing the aromatic polyamine of the component (C) is improved in embedding performance compared with the prior art, and is excellent in heat resistance after curing. (C) component Q In the present specification, the "diphenylfluorene skeleton structure" means a structure remaining after removing a part or all of hydrogen atoms from diphenyl fluorene, and is removed. The number and position of hydrogen atoms are not limited. Among them, a diphenyl fluorene skeleton structure represented by the following structural formula is preferred:

When the component (C) has a benzene ring in a diphenyl mill skeleton structure and an aromatic ring other than the benzene ring, the aromatic ring other than the benzene ring may be an aromatic hydrocarbon ring-17-201100511 or an aromatic hybrid. ring. Examples of the aromatic hydrocarbon ring include a benzene ring, a naphthalene ring, and an anthracene ring. Examples of the aromatic heterocyclic ring include a pyridine ring, a quinoline ring, and an isoquinoline ring. Specific examples of the component (C) include 4,4'-diaminodiphenylphosphonium, 3,3'-diaminodiphenyl maple, and bis(4-(4-aminophenoxy) group. Phenyl) fluorene, bis(4-(3-aminophenoxy)phenyl)anthracene, and the like. Among these, industrially, 4,4,-diaminodiphenyl maple and 3,3'-diaminodiphenyl milling can be preferably used. These aromatic polyamines are well known as epoxy resin curing agents, and commercially available products can be used. The amount of the component (C) is preferably such that the molar ratio of the amine group in the component (C) is from 0.6 to 1.4, more preferably the total epoxy group in the composition of the present invention. Become an amount of 0.8 to 1.2. When the component (C) having the above molar ratio of 0.6 to 1.4 is blended in the composition of the present invention, since the composition is sufficiently crosslinked, the cured property of the cured product is easily improved, and the composition is effectively improved. Subsequent and solder-resistant solderability. Further, since the component (C) is difficult to be left as an unreacted material in the cured product, it is not easily wasted, so that it is easy to save resources and it is economical. In the composition of the present invention, 'except for the epoxy resin of the component (B)', as the component containing an epoxy group, the component (A) and the other component containing an epoxy group may be blended. All of the epoxy groups mean the total of the epoxy group in the component (B), the epoxy group in the component (A), and the epoxy group in the other component containing the epoxy group. The molar ratio of the epoxy group in the component (B) to the epoxy group in the component (a) is preferably from 0.5 to 1.0, more preferably in relation to all the epoxy groups in the composition of the present invention. For -18-201100511 0.7~1.0. Further, the molar amount of the epoxy group in the '() component is preferably from 〇5 to 1.0, more preferably from 〇6 to 0.9, relative to all the epoxy groups in the composition of the present invention. Here, 'when the composition of the present invention contains no epoxy group-containing component other than the (β) component and the (Α) component, the compounding amount of the component (C) is relative to the epoxy group in the (Β) component. The total amount of the epoxy groups in the component (a) is preferably such that the molar ratio of the amine groups in the component (C) is from 0.6 to 1.4, more preferably from 8 to 12. 〇 <Other components> In the adhesive composition of the present invention, in addition to the above (Α) to (C) components, other components may be blended insofar as the properties of the composition are not impaired. Examples of the other component include an epoxy resin other than the (Β) component; a curing agent and a catalyst for the epoxy resin other than the component (C); a chelating agent; a bonding agent; a coloring agent such as a pigment or a dye; Improve wetting agent; antioxidant; thermal stabilizer; solvent, etc.

G. Epoxy resin other than ( () component In the composition of the present invention, an epoxy resin having a skeleton structure other than the dicyclopentadiene skeleton structure may be used in combination with an epoxy resin of a (Β) component. Such epoxy resins other than the (Β) component are well known, and commercially available products can be used. Examples of the epoxy resin other than the (Β) component include a bisphenol F type epoxy resin; a bisphenol fluorene type epoxy resin; and a phenol novolak type phenol phenol phenol resin and a novolac type phenol resin and a ring. A novolak type epoxy resin obtained by condensation of oxychloropropane; an epoxy resin containing a naphthalene ring; a biphenyl-19-201100511 type epoxy resin; a phenol aralkyl type epoxy resin; a biphenyl aralkyl oxy resin Wait. A novolak type epoxy resin is preferred. The amount of the epoxy resin other than the component (B) is 0 to 50 parts by mass, preferably 〇 to 20 parts by mass, based on 1 part by weight of the component (B). When the amount is 50 parts by mass, the embedding property of the obtained adhesive composition is impaired. • The hardener for epoxy resin and the catalyst other than the component (C) are used as the hardener for epoxy resin other than the component (C). Examples of the catalyst include a curing agent for an epoxy resin or a known phenol compound as a catalyst. The amount of the curing agent for the epoxy resin other than the component (C) and the amount of the catalyst hinder the effect of the aromatic polyamine of the component (C). • Tanning agent A tanning agent can also be blended in the composition of the present invention. There are no restrictions on the sputum, and those skilled in the art can be used. The sputum agent may be used alone or in combination of two or more. The amount of the chelating agent to be added is preferably 〇 - part by mass, more preferably 〇 - 500 parts by mass, based on 1 part by mass of the total of the components A) to (C). Examples of the chelating agent include inorganic cerium-filled organic chelating agents such as vermiculite particles, other conductive particles such as alumina, oxygen, carbon black, and silver particles. Among these, vermiculite particles are preferred. The following describes the vermiculite particles in detail. The vermiculite particles moderately increase the melt viscosity of the adhesive layer of the adhesive composition of the present invention, and suppress the mass ratio of the wafer-type ring in the resin sealing step, and the compound is not particularly useful for (-900 titanium compound). More detailed flow -20-201100511, the moisture absorption rate and linear expansion ratio of the obtained cured layer of the adhesive are lowered. The vermiculite particle system is not particularly limited, and a well-known one can be used. The fluidity of the obtained composition is obtained. In view of the above, the vermiculite particles are preferably surface-treated by an organic alkoxysilane, an organic chlorodecane, an organic decane, or an organic ruthenium compound such as a low molecular weight decane. It is also possible to use two or more types in combination. The average particle diameter of the vermiculite particles is preferably 1 μm or less, more preferably 5 μm 0 or less. If the average particle diameter is 1 μ〇ηη or less, the present invention is followed by a sheet. It is easy to maintain the smoothness of the surface. Further, the maximum particle diameter of the vermiculite particles is preferably 20 μm or less. In addition, in the present specification, "average particle diameter" means equivalent to using a laser. The average particle diameter of the volume-based reference of 50% of the cumulative distribution obtained by the particle size distribution measuring apparatus of the diffraction method. Further, the "maximum particle diameter" means the particle in the cumulative distribution measured when the average particle diameter is obtained as described above. The maximum amount of the diameter of the ruthenium particles, for example, fluorite-based vermiculite such as smoldering vermiculite or sedimentary vermiculite, or crystalline vermiculite such as quartz, and specific examples thereof, may be exemplified by Aerosil manufactured by AEROSIL, Japan. R972, R974, R976; (shares) A-20TECH, SE-2050, SC-2050, SE-1 050, SO-E1, SO-C1, SO-E2, SO-C2, SO-E3, SO-C3, SO-E5, SO-C5, Musil 120A, Musil 1 30A, etc., manufactured by Shin-Etsu Chemical Co., Ltd. The amount of the cerium particles is preferably adjusted to the above range while adjusting the amount of the cerium particles. 5 to 80% by mass of the total mass of the composition, particularly preferably 10 to 60% by mass. If the above compounding amount is in the range of 5 to 80 -21 to 201100511% by mass, the resulting cured layer of the adhesive effectively reduces moisture absorption. Rate and coefficient of linear expansion, and it is easy to suppress the rise of the elastic modulus. In the composition of the present invention, a binder may be added in order to improve the adhesion. The auxiliary may be used singly or in combination of two or more. As the adhesion aid, for example, a ruthenium-containing coupling agent may be used. a decane coupling agent. Examples of the auxiliary agent include an epoxy group-containing decane coupling agent, a mercapto group-containing decane coupling agent, an amine group-containing decane coupling agent, and a (meth) acrylonitrile-based decane coupling agent. For example, KBM-403, KBM-402, KBM-803 'KBM-802, KBM-903, KBM-902, KB Μ - 5 0 3, KB Μ 5 1 0 3 by Shin-Etsu Chemical Co., Ltd. Or X -1 2-4 1 4 or such partial hydrolyzate or the like. • Solvent In the composition of the present invention, a solvent may be added from the viewpoint of easiness of mixing of the components, ease of application of the obtained composition, and the like. The solvent may be used singly or in combination of two or more. The solvent may, for example, be an aprotic polar solvent such as methyl ethyl ketone, toluene, ethyl acetate or cyclohexanone ' Ν-methylpyrrolidone (oxime). [Preparation of Adhesive Composition] The adhesive composition of the present invention can be prepared by mixing the above components (A) to (C) and other desired components at room temperature by a conventional mixing means -22-201100511 [ Use of the following composition] The adhesive composition of the present invention can be used, for example, for subsequent use. The attached system is not particularly limited, and examples thereof include a ruthenium wafer, glass, ceramics, and the like. For example, a resin substrate such as a BT substrate or a lead frame made of gold or |Q may be used. Substrate; germanium substrate. For example, the adhesive composition of the present invention is applied to one of the adherends in an appropriate β solvent, and after drying, the adhesive composition of the composition of the adhesive is adhered to the surface of the adherend. The material is heat-hardened, and the following two examples are similar to the above. Drying is preferably carried out at a temperature of from room temperature to 200 t to 150 ° C for 1 minute to 1 hour, particularly preferably from 3 to 10 f, preferably from 0.01 to 10 MPa, especially at 0.05 to 2 MPa, and Q is preferably heat-hardened at 1 Torr. ~200 °c, especially in 120~ Carry out 30 minutes ~ 8 hours, especially good for 1~7 hours. Further, the adhesive composition of the present invention can be used for two attached bodies in a state of being in the form of a millimeter. For example, it is also possible to use the g-formed sheet formed of the adhesive composition of the present invention on the substrate to follow the two attached bodies. More specifically, the adhesive layer is peeled off from the sheet, and then adhered to the two adherends, pressure-bonded and heat-hardened, or may be attached to the body. The conditions of pressure bonding and heat hardening are the same as described above. Two attached bodies are attached, and the attached body of the case, : copper, nickel, etc. are dissolved in the coated body, and the attached body is attached. Solvent, especially at 80 minutes. Pressure bonding is carried out under pressure. The temperature of 1 0 0 ° C is connected to the substrate layer in the form of a film, and the two sheets are attached by laminating, for example, a layer -23-201100511. The adhesive composition is dissolved in a solvent at an appropriate concentration in the same manner as described above, and applied to a substrate and dried to form an adhesive layer. Examples of the solvent and drying conditions are the same as described above. The film thickness of the subsequent layer is not particularly limited, and may be selected as desired, preferably from 10 to ΙΟΟμηη, particularly preferably from 15 to 5 μm. The foregoing substrate is usually in the form of a film, and for example, a polyethylene film, a polypropylene film, a polyester film, a polyamide film, a polyimide film, a polyimide film, a polyether quinone film, a poly A substrate such as a tetrafluoroethylene film, paper, metal foil, or the like, or a substrate having a surface subjected to release treatment. The thickness of the substrate is preferably 10 to ΙΟΟμπι, more preferably 25 to 50 μm. In the field of semiconductor device fabrication, a subsequent layer (subsequent to a film) formed of an adhesive composition can be used as a so-called die-bonding film for bonding a germanium wafer to a substrate. After the germanium wafer is fixed to the substrate by using the adhesive film, and the semiconductor device is manufactured through the wire bonding step and the sealing step, the adhesive film is cured by curing the adhesive film in a portion not embedded after the solid crystal is embedded. The adhesion force with the substrate is lowered by the heating of the wire bonding step. The above-mentioned unburied portion is buried by the sealing step after the wire bonding step. In the semiconductor device sealed by the resin as described above, in order to have reliability, it is necessary to maintain a sufficient adhesion force between the adhesive cured layer and the substrate even if there is a portion where the adhesion is lowered. Thus the 'required adhesion force' is typically at least IMP a when measured at 2 60 °C. Therefore, under the heating condition of the wire bonding step, heating/pressurization of the sealing step of the semiconductor sealing resin is performed after heating the bonding film sandwiched between the two attached bodies such as the combination of the germanium wafer and the substrate. Under the condition of hot press-bonding '-24- 201100511, after heat-hardening to form a layered cured product (adhesive hardened material layer), when the shearing force between the two attached bodies is measured at 260 ° C, The shearing force is usually at least 1 Μ P a . The heating conditions of the wire bonding step are various, and are generally at 170 ° C for 30 minutes or more. Further, the heating/pressurizing condition of the sealing step of the semiconductor sealing resin is usually 160 to 180 ° C / 5 to 1 0 Μ P a for 10 to 150 seconds. The conditions for heat hardening are as described above. The adhesive composition of the present invention can be used for the dicing/bonding film of the present invention. That is, the dicing die-bonding film of the present invention comprises: a dicing film having a substrate and an adhesive layer provided thereon, and a composition of the adhesive of the present invention formed on the adhesive layer of the dicing film The cutting layer of the adhesive layer • the adhesive film. The dicing film used for the dicing die-bonding film of the present invention is preferably composed of at least two layers of a film-form substrate and an adhesive layer as a base. The above-mentioned substrate is not particularly limited as long as it is used in a general dicing film. As the substrate, for example, (I) polyethylene, polypropylene fluorene, ethylene-propylene copolymer, polybutene, ethylene-vinyl acetate copolymer, ethylene-acrylic acid ethyl copolymer, ionomer, or the like can be used. A homopolymer or copolymer of α·olefin, (II) engineering plastics such as polyethylene terephthalate, polycarbonate, polymethyl methacrylate, etc., (III) polyurethane, styrene- A synthetic resin such as an ethylene-butene copolymer or a thermoplastic elastomer such as a styrene-ethylene-pentene copolymer. The thickness of the substrate is preferably 60 to 20 Mm. When the thickness of the substrate is in the range of 60 to 200 μm, there is a tendency to suppress the amount of transfer of the epoxy resin from the adhesive layer to the dicing film, so that it is easy to maintain the characteristics of the adhesive layer-25- 201100511, and the operation of mounting the wafer on the dicing film is easy, and the substrate can be effectively prevented from being melted on the chuck table due to the heat of cutting during cutting. An adhesive layer may also be provided on at least one side of the aforementioned substrate. The adhesive for forming the adhesive layer is a wafer which can be sliced by using the dicing die-bonding film of the present invention to cut the wafer, and the film is adhered to the back surface of the wafer, and the film is cut by the dicing film. The pick-up is not particularly limited, and a pressure-sensitive adhesive or an ultraviolet (UV) curable adhesive which is usually used as a dicing tape can be used. More specifically, examples of the adhesive include a rubber-based, acrylic-based, urethane-based, or polyoxy-based pressure-sensitive adhesive. An acrylic adhesive, an urethane-based adhesive, or a polyoxynoxy adhesive is preferably used. The thickness of the adhesive layer is preferably from 1 to 50 μm, more preferably from 5 to ΙΟμιη. Preferably, the adhesive layer has a strong adhesion to the substrate to the extent that the wafer does not scatter during the cutting step, and the 180-degree peeling force between the adhesive layer and the adhesive layer is preferably 〇.〇1 to 〇.7N/20 mm. More preferably 〇·1 ~ 0.4N/20mm. The dicing die-bonding film of the present invention can be produced, for example, by laminating an adhesive layer in the contiguous sheet of the present invention on the adhesive layer of the dicing film. Further, the adhesive composition of the present invention can be obtained by dissolving the adhesive composition in the same concentration as described above in a solvent, applying it on the adhesive layer of the dicing film, and drying it to form an adhesive layer. The solvent, the drying conditions, and the film thickness of the adhesive layer are the same as described above. In the dicing die-bonding film of the present invention, it is preferable to suppress the transfer of the component in the adhesive layer from the adhesive layer to the dicing film, and it is more preferable to use the dicing film from the production. 5 t:, 50% R Η is still set to 1 / -26-201100511 months, the amount of the component transferred from the adhesive layer to the adhesive layer of the dicing film is suppressed before standing still The 30% mass of all components in the adhesive layer of the dicing film. /. . The amount of the component to be transferred from the adhesive layer to the dicing film is preferably less than 15% by mass, more preferably 1% by mass or less. The amount of transfer can be adjusted by appropriately selecting the type, amount, and the like of the component (B). The semiconductor device can be manufactured by using the subsequent sheet of the present invention or the cut/bonded film of the present invention in accordance with a usual method. The semiconductor device thus obtained has excellent reliability. Further, the adhesive composition of the present invention can be used not only for the production of electronic parts such as semiconductor devices, but also for the production of various products including the subsequent steps, such as the manufacture of LED parts, sensors, liquid crystal parts, and the like. [Examples] Hereinafter, the present invention will be further illustrated by the examples and comparative examples, but the present invention is not limited by the examples. [Preparation of the composition of the adhesive agent] The following components (A) to (C) and other components are added to the mixing amount (parts by mass) in Table 1. The mixer of the revolution type (manufactured by THINKY Co., Ltd.) In addition, methyl ethyl ketone, toluene or cyclohexanone was added and the mixture was mixed so that the total concentration of the components was 20% by mass, and the adhesive composition was prepared. -27-201100511 (meth)acrylic resin of the component (A). SG-P3LC modified 43: (meth)acrylic acid having an epoxy group and further having a structural unit derived from acrylonitrile represented by the above formula (〇) Resin (manufactured by NAGASE CHEMTEX Co., Ltd.) containing an epoxy group of 〇.〇27 molk, Tg = 8 ° C, weight average molecular weight = 850,000 (A) (meth) acrylic resin. SG- 708-6: (meth)acrylic acid (manufactured by NAGASE CHEMTEX Co., Ltd.) having a carboxyl group and having a structural unit derived from acrylonitrile represented by the above formula (1:), containing 〇·159 mol/100克 carboxyl group, Tg = 4 ° C, weight average molecular weight = 800,000 (B) component of epoxy resin • HP 7200: dicyclopentadiene type epoxy resin (made by Dainippon Ink Co., Ltd.) 'The above structural formula (2 Epoxy resin other than the epoxy resin (η二I·6) (Β) component. EOCN-1020: cresol_novolac type epoxy resin (manufactured by Nippon Kayaku Co., Ltd.) RE-SIOS: Double Phenolphthalein type epoxy resin (made by Nippon Epoxy Co., Ltd.) (C) Aromatic polyamine. 4,4'-DDS : 4,4'-diaminodiphenyl hydrazine Shan Jinghua Co., Ltd. 201100511) .3,3'-DDS : 3,3'-Diaminodiphenyl hydrazine (manufactured by Xiaoxi Chemical Co., Ltd.) Aromatic polyamine other than (C) component • DDM: 4,4, Diaminodiphenylmethane (manufactured by Wakayama Seiki Co., Ltd.) Aromatic polyamine oxime (other component) filler having no diphenyl fluorene skeleton structure • Vermiculite particles: SC-2050 (ADMATECHS), ball Sandstone 'average particle size 0.5 μ m (other components) followed by auxiliaries. coupling agent · Χ-12-·414 (manufactured by Shin-Etsu Chemical Co., Ltd.), thiol coupling agent 〇 [production of subsequent sheets] The adhesive composition was applied onto a PET film having a thickness of 50 μm coated with a fluorine-based polyoxynitride release agent, and dried by heating at 110 ° C for 10 minutes to form an adhesive layer having a thickness of about 25 μm. Use a thin sheet. [Production of dicing and die-bonding film] Further, the above-mentioned succeeding sheet and any of the following dicing films, and the adhesive layer of the dicing film and the dicing film -29 - 201100511 layer The way of contact is to make a fit at room temperature to make a cut and sticky crystal. Cutting film. Pressure-sensitive cutting film: SD 8 5T A (manufactured by the Electric Chemical Industry Co., Ltd.), thickness 8 5 μιη • UV-curing type cutting film: UHP-110M3 (Electrical Chemistry: C company), thickness 1 ιομπι [ Test] The following test was carried out for the obtained sheet and the cut/adhesive film. The results are shown in Table 1. (1) initial adhesion

A silicon wafer having a thickness of 450 μm was cut into a 2 mm x 2 mm wafer, and on the back side of the wafer thus cut, the sheet was contacted by the adhesive layer in a hot press. Next, the sheet was cut into the same shape as the wafer to obtain a tantalum wafer to which the sheet was attached. Thereby, the wafer was peeled off from the p ET film' to obtain a tantalum wafer with an adhesive layer. Then, on the BT substrate or the ruthenium substrate of 10 mm×10 mm which is coated with a photoresist AUS308 (manufactured by Sun Ink Co., Ltd.), the obtained ruthenium wafer with the adhesive layer was placed so that the adhesive layer adhered. The surface contact was fixed by heat-pressing for 2 seconds under conditions of TC and 0.1 MPa. The substrate on which the tantalum wafer was fixed was heated at 175 ° C for 6 hours to harden the adhesive layer to prepare a test. Tablet (following the test piece). Use this to test the piece'

-30-201100511 The shear adhesion force between the adhesive layer of the adhesive at 260 ° C and the substrate was measured by an adhesion tester (4000PXY manufactured by DAGE Co., Ltd.). (2) Adhesiveness after moist heat The test piece of the above (1) was kept at 85 ° C / 60% RH for 168 hours, and then passed through a brazing furnace at 260 ° C for 3 times, and The shearing force at 260 ° C was measured in the same manner as in the above (1). 〇(3) Buried in one side of a 矽 wafer with a diameter of 8吋 and a thickness of 75μηη, in the form of contact with the adhesive layer, at 7 (TC thermocompression bonding followed by sheeting. On the adhesive layer of the wafer of the adhesive layer obtained after peeling the PET film, the pressure-sensitive dicing film is adhered to contact the adhesive layer of the pressure-sensitive dicing film. The enamel wafer is subjected to the following cutting conditions. The ruthenium wafer was cut into a 9 mm square. Then, the 9 mm square enamel wafer thus obtained was laminated with an adhesive layer on the back surface, and peeled off from the adhesive layer of the pressure-sensitive dicing film. A die bonding apparatus ( BESTEM-D02-Type B), which is disposed on a resin substrate of 50 min x 50 mm x thickness 250 μm formed with a striped pattern of 5 to 15 μm wide (coating hardened photoresist AU S 3 0 8) On the Β Τ substrate), in order to make the adhesive layer contact, heat-pressing for 1 second under the condition of 1 : 3 (1, 〇. 1 MP a. If shown in Figure 1 (showing the immersion performance test of the wafer) Based on the configuration diagram), this point is 9mm on one side. The prismatic wafer 1 is arranged on the resin substrate 2 of -31 - 201100511 square of 50 mm on one side at intervals of 3 mm in 4 rows and 4 columns, and the outer edge of the tantalum wafer 1 and the resin substrate 2 disposed on the outermost side. The interval is 2 mm. The resin substrate to which the tantalum wafer is thermally pressed is heated by the heating temperature of 17 ° C for 120 minutes, and then the thickness of the resin substrate is 600 μm. The molding material KMC2500LM1B (manufactured by Shin-Etsu Chemical Co., Ltd.) was subjected to resin sealing (1 75 ° C, sealing pressure 6.9 MPa, 90 seconds), and the molding material was heat-cured at 175 ° for 4 hours. The ultrasonic image measuring device was used. The inside of the semiconductor package thus obtained was observed to investigate the presence or absence of a hole. When the hole was not observed inside the semiconductor package by the observation of the ultrasonic image measuring apparatus, the embedding performance was evaluated to be sufficient. On the other hand, the ultrasonic image was used. When the measurement device was observed, when the hole was observed inside the semiconductor package, the embedding performance was evaluated to be insufficient. "〇" in Table 1 indicates that the embedding performance was sufficient, and "X" indicates that the embedding performance was not sufficient. (4) Reliability of the package The above (3) resin-sealed tantalum wafer was cut, and 16 of the obtained packages were held at 85 ° C / 60 ° RH for 168 hours, and then reached a maximum temperature of 260. After the soldering furnace of °C was used for 3 times, the presence or absence of peeling between the wafer and the substrate was observed by an ultrasonic image measuring device. The "〇" in Table 1 indicates that no peeling was observed in all of the 16 packages. X" indicates that peeling was observed even in one of the 16 packages. (5) Cutting. The amount of transfer of the epoxy resin of the die-bonded film was the above-mentioned cut/bonded film at 25 ° C / 50% RH. After storing in a constant temperature and humidity chamber for one month, the subsequent dicing and dicing film in the dicing film is separated, and the adhesive layer in the contiguous sheet is dissolved in THF. The resulting solution was measured by GPC to determine the amount of epoxy resin remaining in the adhesive layer. The amount of transfer (% by mass) of the epoxy resin from the sheet to the dicing film is determined by the formula: (Ε〇-Ει) / Ε〇χ100 (however, the ring in the initial layer of the adhesive layer) The content (parts by mass) of the oxygen resin, and the Q content (parts by mass) of the epoxy resin remaining in the adhesive layer after storage. Further, GPC was carried out using HLC8220 GPC (manufactured by TOSO Co., Ltd.), and THF was used as an eluent. (6) Cleavage after storage and adhesion of the adhesive film The dicing and die-bonding film prepared above is stored in a constant temperature and humidity chamber at 25 ° C / 50% RH for one month, according to JIS Z 023 7 The adhesion between the subsequent sheet and the dicing film in the dicing film was measured. Q (7) Cutting after storage * Adhesive film of the adhesive film The above-mentioned cut and bonded film is stored in a constant temperature and humidity chamber at 25 ° C / 50% RH for one month. The PET film was peeled off from the film, and a ruthenium wafer having a diameter of 8 Å and a thickness of 75 μm was attached to the exposed adhesive layer, and dicing was performed under the following conditions to obtain a ruthenium wafer of 10 mm x 10 mm. Using the die bonding apparatus (BESTEM-D02-Type B) manufactured by NEC Machinery Co., 100 cut wafers thus cut were picked up from the cut film. In Table 1, "〇" means that all the wafers can be picked up stably, and "X" means that there is also one sand wafer that cannot be picked up. -33- 201100511 Cutting conditions: Cutting device: DAD-341 (manufactured by DISCO) Cutting method: single-cut spindle rotation number: 40000 rpm Cutting blade: NBC-ZH 104F27HEEE (manufactured by DISCO) Feeding speed: 50 mm/sec [ Table 1] Example Comparative Example 1 2 3 4 1 2 3 4 (meth)acrylic acid (A) component SG-P3LC modified 43 595 59.5 59.5 59.5 59.5 59.5 59.5 Resin (A) component other than SG-708-6 595 ( B) Component HP7200 19.1 19.1 14.1 19.1 20.1 19.1 Epoxy resin other than TO component EOCN-1020 5.0 19.5 RE-310S 19.1 (C戚4,4,-DDS 6.4 3.2 Aromatic polyamine 3,3-DDS 6.4 6.4 3.2 6.0 6.4 6.4 (DDM other than C戚 5.4 Other SC-2050 14 14 14 14 14 14 14 14 X-12414 1 1 1 1 1 1 1 1 Initial stage of Si substrate 3.4 3.9 3.8 3.5 3.3 1.8 3.3 1.3 Subsequent (MPa) After damp heat 4.1 4.3 4.3 4.1 3.3 2.9 3.1 1.7 Initial BT substrate 5.0 5.9 5.0 5.0 4.5 33 4.3 3.4 After damp heat 5.1 5.8 5.1 5.1 4.4 4.3 5.4 4.1 Buried performance 170 ° C, 12-times heating, 〇〇〇〇XXXX package reliability 170 °C, 120 minutes heating 〇〇〇〇XXXX Adhesion (N/20mm) SD 85TA 0.2 0.2 0.2 0.2 0.2 0.6 1.8 1.2 Mirror Rose (Sustained, SD 85TA 10 10 7 10 10 3 33 10 UHP-110M3 11 11 8 11 11 5 35 11 Pick-up SD 85TA 〇〇〇〇〇〇X 〇UHP-110M3 〇〇〇〇〇〇X 〇-34- 201100511 In the composition of the present invention (Examples 1 to 4), use as (meth) As the component (A) of the acrylic resin, the component (B) which is an epoxy resin is used as the component (C) which is an aromatic polyamine. On the other hand, in the composition of Comparative Example 1, except for the component (C) which is an aromatic polyamine, the composition of Comparative Examples 2 and 3 was used as the epoxy resin (B). In the composition of Comparative Example 4, except for the component (A) which is a (meth)acrylic acid resin. The composition of the present invention is excellent in embedding performance as compared with the compositions of Comparative Examples 1 to 4, and the adhesive cured layer obtained from the compositions of Comparative Examples 1 to 4, as shown in Table 1 In contrast, the adhesive cured layer obtained from the composition of the present invention has high packaging reliability under moisture absorption. Further, an adhesive layer epoxy resin pair formed from the composition of the present invention is compared with an adhesive layer formed of the composition of Comparative Example 3 using a bisphenol A type epoxy resin as an epoxy resin. The amount of transfer of the dicing film is small, the adhesion to the dicing film is small, and the pick-up property is stable.

G. Industrial Applicability The adhesive composition of the present invention is excellent in embedding performance, and the adhesive cured layer obtained from the adhesive composition is excellent in adhesion and low in modulus and excellent in heat resistance. Further, the cut/adhesive film of the present invention is excellent in property stability and pick-up stability even after long-term storage. Therefore, the adhesive composition of the present invention and the subsequent use sheet and the dicing/mulet film using the adhesive composition are suitable for producing a highly reliable semiconductor device. -35- 201100511 [Simplified Schematic] FIG. 1 is a view showing the configuration of a germanium wafer in a buried performance test. [Main component symbol description] 1 : 矽 wafer 2 : resin substrate fl

-36 -

Claims (1)

201100511 VII. Patent application scope: 1. An adhesive composition characterized by (A) a weight average molecular weight of 50,000 to 1,500,000, having an epoxy group and a structural unit represented by the following formula (1) ( Methyl)acrylic resin, (Chemical Formula 1) CN (1) (B) An epoxy resin having a dicyclopentadiene skeleton structure, and (C) an aromatic polyamine having a diphenylfluorene skeleton structure. 2. The adhesive composition according to item 1 of the patent application, wherein the component (B) is an epoxy resin represented by the following structural formula (2). (2) (where η is 0 or more). 3. The adhesive composition of claim 1 or 2, wherein the diphenylanthracene skeleton structure in the component (C) is a diphenyl maple skeleton structure represented by the following structural formula: [Chemical 3] The adhesive composition according to any one of claims 1 to 3, which is formed into a film shape. A subsequent sheet comprising a substrate and an adhesive layer formed of the adhesive composition according to any one of claims 1 to 3 which is provided on the substrate. A dicing die-bonding film comprising: a dicing film having a substrate and an adhesive layer provided thereon, and an adhesive layer provided on the dicing film, which is in the scope of claims 1 to 3 An adhesive layer formed from any of the adhesive compositions. 7. The dicing film of claim 6, wherein the component in the adhesive layer is inhibited from being transferred from the adhesive layer to the dicing film. (8) The dicing/mulet film according to the sixth or seventh aspect of the invention, wherein the dicing film is left at a temperature of 25 ° C and 5 〇 % RH for one month from the manufacture, and the above-mentioned adhesive The amount of the component transferred to the adhesive layer of the dicing film was suppressed to 30 masses of all the components in the adhesive layer of the dicing die film before standing still. /. . A semiconductor device manufactured by using a dicing film or a dicing film according to any one of claims 6 to 8. -38-